Sample records for gaas terahertz-strahlung auf

  1. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Shang-Hua; Jarrahi, Mona; Electrical Engineering Department, University of California Los Angeles, Los Angeles, California 90095

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more thanmore » 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.« less

  2. Terahertz pulse induced intervalley scattering in photoexcited GaAs.

    PubMed

    Su, F H; Blanchard, F; Sharma, G; Razzari, L; Ayesheshim, A; Cocker, T L; Titova, L V; Ozaki, T; Kieffer, J-C; Morandotti, R; Reid, M; Hegmann, F A

    2009-06-08

    Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.

  3. Transient GaAs plasmonic metasurfaces at terahertz frequencies

    DOE PAGES

    Yang, Yuanmu; Kamaraju, N.; Campione, Salvatore; ...

    2016-12-09

    Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to moremore » complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.« less

  4. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru; Buriakov, A. M.

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity ofmore » the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.« less

  5. The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

    2017-06-01

    Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

  6. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    PubMed

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  7. Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru; Khabibullin, R. A.; Yachmenev, A. E.

    The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

  8. Coherent Excitation of Optical Phonons in GaAs by Broadband Terahertz Pulses

    PubMed Central

    Fu, Zhengping; Yamaguchi, Masashi

    2016-01-01

    Coherent excitation and control of lattice motion by electromagnetic radiation in optical frequency range has been reported through variety of indirect interaction mechanisms with phonon modes. However, coherent phonon excitation by direct interaction of electromagnetic radiation and nuclei has not been demonstrated experimentally in terahertz (THz) frequency range mainly due to the lack of THz emitters with broad bandwidth suitable for the purpose. We report the experimental observation of coherent phonon excitation and detection in GaAs using ultrafast THz-pump/optical-probe scheme. From the results of THz pump field dependence, pump/probe polarization dependence, and crystal orientation dependence, we attributed THz wave absorption and linear electro-optic effect to the excitation and detection mechanisms of coherent polar TO phonons. Furthermore, the carrier density dependence of the interaction of coherent phonons and free carriers is reported. PMID:27905563

  9. Metal-Coated <100>-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

    NASA Astrophysics Data System (ADS)

    delos Santos, Ramon; Mag-usara, Valynn; Tuico, Anthony; Copa, Vernalyn; Salvador, Arnel; Yamamoto, Kohji; Somintac, Armando; Kurihara, Kazuyoshi; Kitahara, Hideaki; Tani, Masahiko; Estacio, Elmer

    2018-04-01

    The influence of crystal thickness of metal-coated <100>-cut GaAs (M-G-M) on Cherenkov-phase-matched terahertz (THz) pulse detection was studied. The M-G-M detectors were utilized in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). Polarization-sensitive measurements were carried out to exemplify the efficacy of GaAs in detecting transverse magnetic (TM)- and transverse electric (TE)-polarized THz waves. The reduction of GaAs' thickness increased the THz amplitude spectra of the detected TM-polarized THz electro-optic (EO) signal due to enhanced electric field associated with a more tightly-focused and well-concentrated THz radiation on the thinner M-G-M. The higher-fluence THz beam coupled to the thinner M-G-M improved the integrated intensity of the detected THz amplitude spectrum. This trend was not observed for TE-polarized THz waves, wherein the integrated intensities were almost comparable. Nevertheless, good agreement of spectral line shapes of the superposed TM- and TE-polarized THz-EO signals with that of elliptically polarized THz-EO signal demonstrates excellent polarization-resolved detection capabilities of M-G-M via Cherenkov-phase-matched EO sampling technique.

  10. Metal-Coated <100>-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

    NASA Astrophysics Data System (ADS)

    delos Santos, Ramon; Mag-usara, Valynn; Tuico, Anthony; Copa, Vernalyn; Salvador, Arnel; Yamamoto, Kohji; Somintac, Armando; Kurihara, Kazuyoshi; Kitahara, Hideaki; Tani, Masahiko; Estacio, Elmer

    2018-06-01

    The influence of crystal thickness of metal-coated <100>-cut GaAs (M-G-M) on Cherenkov-phase-matched terahertz (THz) pulse detection was studied. The M-G-M detectors were utilized in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). Polarization-sensitive measurements were carried out to exemplify the efficacy of GaAs in detecting transverse magnetic (TM)- and transverse electric (TE)-polarized THz waves. The reduction of GaAs' thickness increased the THz amplitude spectra of the detected TM-polarized THz electro-optic (EO) signal due to enhanced electric field associated with a more tightly-focused and well-concentrated THz radiation on the thinner M-G-M. The higher-fluence THz beam coupled to the thinner M-G-M improved the integrated intensity of the detected THz amplitude spectrum. This trend was not observed for TE-polarized THz waves, wherein the integrated intensities were almost comparable. Nevertheless, good agreement of spectral line shapes of the superposed TM- and TE-polarized THz-EO signals with that of elliptically polarized THz-EO signal demonstrates excellent polarization-resolved detection capabilities of M-G-M via Cherenkov-phase-matched EO sampling technique.

  11. The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide

    NASA Astrophysics Data System (ADS)

    Cortie, D. L.; Lewis, R. A.

    2012-06-01

    It is well established that under excitation by short (<1 ps), above-band-gap optical pulses, semiconductor surfaces may emit terahertz-frequency electromagnetic radiation via photocarrier diffusion (the dominant mechanism in InAs) or photocarrier drift (dominant in GaAs). Our three-dimensional ensemble Monte Carlo simulations allow multiple physical parameters to vary over wide ranges and provide unique direct insight into the factors controlling terahertz emission. We find for GaAs (in contrast to InAs), scattering and the surface potential are key factors. We further delineate in GaAs (as in InAs) the role of a vanguard counter-potential. The effects of varying dielectric constant, band-gap, and effective mass are similar in both emitter types.

  12. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    PubMed Central

    Ohno, Takeo; Oyama, Yutaka

    2012-01-01

    In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

  13. Resonant features of the terahertz generation in semiconductor nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Trukhin, V. N., E-mail: valera.truchin@mail.ioffe.ru; Bouravleuv, A. D.; Mustafin, I. A.

    2016-12-15

    The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

  14. Terahertz field-induced ionization and perturbed free induction decay of excitons in bulk GaAs

    NASA Astrophysics Data System (ADS)

    Murotani, Yuta; Takayama, Masayuki; Sekiguchi, Fumiya; Kim, Changsu; Akiyama, Hidefumi; Shimano, Ryo

    2018-03-01

    We investigated the interaction between an intense terahertz (THz) pulse and excitons in bulk GaAs by using THz pump near-infrared (NIR) optical probe spectroscopy. We observed a clear spectral oscillation in the NIR transient absorption spectra at low temperature, which is interpreted as the THz pump-induced perturbed free induction decay (PFID) of the excitonic interband polarization. We performed a numerical simulation based on a microscopic theory and identified that the observed PFID signal originates from the THz field-induced ionization of excitons. Using a real-space representation of the excitonic wave function, we visualized how the ionization of an exciton proceeds under the intense single-cycle THz electric field. We also calculated the nonlinear susceptibility with the lowest-order perturbation theory assuming a weak THz pump, which showed a similar spectral feature with that obtained by the full treatment to field-induced ionization process. This coincidence is attributed to the fact that 1s-excitonic interband polarization is modified predominantly through interactions with the p-wave component of the excitonic wave function. A simple phenomenological expression of the PFID signal is presented to discuss effects of the THz pump pulse duration on the spectral oscillation.

  15. vh@nnlo-v2: new physics in Higgs Strahlung

    NASA Astrophysics Data System (ADS)

    Harlander, Robert V.; Klappert, Jonas; Liebler, Stefan; Simon, Lukas

    2018-05-01

    Introducing version 2 of the code vh@nnlo [1], we study the effects of a number of new-physics scenarios on the Higgs-Strahlung process. In particular, the cross section is evaluated within a general 2HDM and the MSSM. While the Drell-Yan-like contributions are consistently taken into account by a simple rescaling of the SM result, the gluon-initiated contribution is supplemented by squark-loop mediated amplitudes, and by the s-channel exchange of additional scalars which may lead to conspicuous interference effects. The latter holds as well for bottom-quark initiated Higgs Strahlung, which is also included in the new version of vh@nnlo. Using an orthogonal rotation of the three Higgs CP eigenstates in the 2HDM and the MSSM, vh@nnlo incorporates a simple means of CP mixing in these models. Moreover, the effect of vector-like quarks in the SM on the gluon-initiated contribution can be studied. Beyond concrete models, vh@nnlo allows to include the effect of higher-dimensional operators on the production of CP-even Higgs bosons. Transverse momentum distributions of the final state Higgs boson and invariant mass distributions of the Vϕ final state for the gluon- and bottom-quark initiated contributions can be studied. Distributions for the Drell-Yan-like component of Higgs Strahlung can be included through a link to MCFM. vh@nnlo can also be linked to FeynHiggs and 2HDMC for the calculation of Higgs masses and mixing angles. It can also read these parameters from an SLHA-file as produced by standard spectrum generators. Throughout the manuscript, we highlight new-physics effects in various numerical examples, both at the inclusive level and for distributions.

  16. The role of optical rectification in the generation of terahertz radiation from GaBiAs

    NASA Astrophysics Data System (ADS)

    Radhanpura, K.; Hargreaves, S.; Lewis, R. A.; Henini, M.

    2009-06-01

    We report on a detailed study of the emission of terahertz-frequency electromagnetic radiation from layers of GaBiyAs1-y (0≤y<0.04) grown by molecular beam epitaxy on (311)B and (001) GaAs substrates. We measure two orthogonally polarized components of the terahertz radiation emitted under excitation by ultrashort near-infrared laser pulses in both transmission and reflection geometries as a function of the crystal rotation about its surface normal as well as the effect of in-plane magnetic field and pump fluence on the terahertz emission. We conclude that the principal mechanism for terahertz generation is via optical rectification rather than transient currents.

  17. Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam; Kawamura, Jonathan H.; Lin, Robert H.; Williams, Benjamin

    2012-01-01

    Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.

  18. EDITORIAL: Terahertz nanotechnology Terahertz nanotechnology

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Tonouchi, Masayoshi; Reno, John L.

    2013-05-01

    an InGaAs heterostructure Nanotechnology 24 214007 [4] Chen H-T, Padilla W J, Zide J M O, Gossard A C, Taylor A J and Averitt R D 2006 Active terahertz metamaterial devices Nature 444 597-600 [5] Hans H 1991 Microwave technology in the terahertz region Brand Conf. Proc.—European Microwave Conf. vol 1, pp 16-35 [6]Joyce H J, Docherty C J, Gao Q, Tan H H, Jagadish C, Lloyd-Hughes J, Herz L M and Johnston M B 2013 Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy Nanotechnology 24 214006 [7] Knap W, Rumyantsev S, Vitiello M S, Coquillat D, Blin S, Dyakonova N, Shur M, Teppe F, Tredicucci A and Nagatsuma T 2013 Nanometer size field effect transistors for terahertz detectors Nanotechnology 24 214002 [8] Kawano Y 2013 Wide-band frequency-tunable terahertz and infrared detection with graphene Nanotechnology 24 214004 [9]Romeo L, Coquillat D, Pea M, Ercolani D, Beltram F, Sorba L, Knap W, Tredicucci A and Vitiello M S 2013 Nanowire-based field effect transistors for terahertz detection and imaging systems Nanotechnology 24 214005 [10] Son J-H 2013 Principle and applications of terahertz molecular imaging Nanotechnology 24 214001 [11] Zhu Z, Yang X, Gu J, Jiang J, Yue W, Tian Z, Tonouchi M, Han J and Zhang W 2013 Broadband plasmon induced transparency in terahertz metamaterials Nanotechnology 24 214003 [12] Tonouchi M 2007 Cutting-edge terahertz technology Nature Photon. 1 97-105

  19. Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Oyama, Yutaka, E-mail: oyama@material.tohoku.ac.jp; Dezaki, Hikari; Shimizu, Yusaku

    2015-01-12

    Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs.

  20. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

    PubMed

    Wan, W J; Li, H; Zhou, T; Cao, J C

    2017-03-08

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

  1. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

    PubMed Central

    Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

    2017-01-01

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

  2. Cherenkov emission of terahertz surface plasmon polaritons from a superluminal optical spot on a structured metal surface.

    PubMed

    Bakunov, M I; Tsarev, M V; Hangyo, M

    2009-05-25

    We propose to launch terahertz surface plasmon polaritons on a structured metal surface by using a femtosecond laser pulse obliquely incident on a strip of an electro-optic material deposited on the surface. The laser pulse creates a nonlinear polarization that moves along the strip with a superluminal velocity and emits surface terahertz waves via the Cherenkov radiation mechanism. We calculate the radiated fields and frequency distribution of the radiated energy for a grooved perfect-conductor surface with a GaAs strip illuminated by Ti:sapphire laser. This technique can be used to perform surface terahertz spectroscopy.

  3. Lateral terahertz hot-electron bolometer based on an array of Sn nanothreads in GaAs

    NASA Astrophysics Data System (ADS)

    Ponomarev, D. S.; Lavrukhin, D. V.; Yachmenev, A. E.; Khabibullin, R. A.; Semenikhin, I. E.; Vyurkov, V. V.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2018-04-01

    We report on the proposal and the theoretical and experimental studies of the terahertz hot-electron bolometer (THz HEB) based on a gated GaAs structure like the field-effect transistor with the array of parallel Sn nanothreads (Sn-NTs). The operation of the HEB is associated with an increase in the density of the delocalized electrons due to their heating by the incoming THz radiation. The quantum and the classical device models were developed, the quantum one was based on the self-consistent solution of the Poisson and Schrödinger equations, the classical model involved the Poisson equation and density of states omitting quantization. We calculated the electron energy distributions in the channels formed around the Sn-NTs for different gate voltages and found the fraction of the delocalized electrons propagating across the energy barriers between the NTs. Since the fraction of the delocalized electrons strongly depends on the average electron energy (effective temperature), the proposed THz HEB can exhibit an elevated responsivity compared with the HEBs based on more standard heterostructures. Due to a substantial anisotropy of the device structure, the THz HEB may demonstrate a noticeable polarization selectivity of the response to the in-plane polarized THz radiation. The features of the THz HEB might be useful in their practical applications in biology, medicine and material science.

  4. Failure mechanism of THz GaAs photoconductive antenna

    NASA Astrophysics Data System (ADS)

    Qadri, Syed B.; Wu, Dong H.; Graber, Benjamin D.; Mahadik, Nadeemullah A.; Garzarella, Anthony

    2012-07-01

    We investigated the failure mechanism of THz GaAs photoconductive antenna using high resolution x-ray diffraction topography. From these studies, it was found that grain boundaries are formed during the high frequency device operation. This results in the segregation of gold at the boundaries causing electromigration of the metal between the gold micro-strips. This disrupts the photocurrents from being produced by femtosecond laser thus preventing terahertz beam generation from the photoconductive antennae leading to device failure.

  5. Linewidth and tuning characteristics of terahertz quantum cascade lasers.

    PubMed

    Barkan, A; Tittel, F K; Mittleman, D M; Dengler, R; Siegel, P H; Scalari, G; Ajili, L; Faist, J; Beere, H E; Linfield, E H; Davies, A G; Ritchie, D A

    2004-03-15

    We have measured the spectral linewidths of three continuous-wave quantum cascade lasers operating at terahertz frequencies by heterodyning the free-running quantum cascade laser with two far-infrared gas lasers. Beat notes are detected with a GaAs diode mixer and a microwave spectrum analyzer, permitting very precise frequency measurements and giving instantaneous linewidths of less than -30 kHz. Characteristics are also reported for frequency tuning as the injection current is varied.

  6. InAs based terahertz quantum cascade lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael

    2016-01-04

    We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applyingmore » a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.« less

  7. Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

    NASA Technical Reports Server (NTRS)

    Ting, David Z. -Y.; Chang, Yia-Chung; Bandara, Sumith V.; Gunapala, Sarath D.

    2007-01-01

    The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.

  8. Sn nanothreads in GaAs: experiment and simulation

    NASA Astrophysics Data System (ADS)

    Semenikhin, I.; Vyurkov, V.; Bugaev, A.; Khabibullin, R.; Ponomarev, D.; Yachmenev, A.; Maltsev, P.; Ryzhii, M.; Otsuji, T.; Ryzhii, V.

    2016-12-01

    The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

  9. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Generation of terahertz radiation upon filtration of a supercontinuum produced during the propagation of a femtosecond laser pulse in a GaAs crystal

    NASA Astrophysics Data System (ADS)

    Vardanyan, Aleksandr O.; Oganesyan, David L.

    2008-11-01

    The results of a theoretical study of the formation of a supercontinuum produced due to the interaction of femtosecond laser pulses with an isotropic nonlinear medium are presented. The system of nonlinear Maxwell's equations was numerically integrated in time by the finite-difference method. The interaction of mutually orthogonal linearly-polarised 1.98-μm, 30-fs, 30-nJ pulses propagating along the normal to the 110 plane in a 1-mm-long GaAs crystal was considered. In the nonlinear part of the polarisation medium, the inertialless second-order nonlinear susceptibility was taken into account. The formation process of a terahertz pulse obtained due to the supercontinuum filtration was studied.

  10. Terahertz-wave surface-emitted difference-frequency generation without quasi-phase-matching technique.

    PubMed

    Avetisyan, Yuri H

    2010-08-01

    A scheme of terahertz (THz)-wave surface-emitted difference-frequency generation (SEDFG), which lacks the drawbacks associated with the usage of periodically orientation-inverted structures, is proposed. It is shown that both material birefringence of the bulk LiNbO(3) crystal and modal birefringence of GaAs/AlAs waveguide are sufficient to obtain SEDFG up to a frequency of approximately 3THz. The simplicity of the proposed scheme, along with the fact that there is a much smaller THz-wave decay in nonlinear crystal, makes it a good candidate for the practical realization of efficient THz generation. The use of a GaAs waveguide with an oxidized AlAs layer is proposed for enhanced THz-wave SEDFG in the vicinity of the GaAs polariton resonance at 8THz.

  11. Wireless multi-level terahertz amplitude modulator using active metamaterial-based spatial light modulation.

    PubMed

    Rout, Saroj; Sonkusale, Sameer

    2016-06-27

    The ever increasing demand for bandwidth in wireless communication systems will inevitably lead to the extension of operating frequencies toward the terahertz (THz) band known as the 'THz gap'. Towards closing this gap, we present a multi-level amplitude shift keying (ASK) terahertz wireless communication system using terahertz spatial light modulators (SLM) instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. The fundamental principle behind this higher efficiency is the conversion of a noisy voltage domain signal to a noise-free binary spatial pattern for effective amplitude modulation of a free-space THz carrier wave. Spatial modulation is achieved using an an active metamaterial array embedded with pseudomorphic high-electron mobility (pHEMT) designed in a consumer-grade galium-arsenide (GaAs) integrated circuit process which enables electronic control of its THz transmissivity. Each array is assembled as individually controllable tiles for transmissive terahertz spatial modulation. Using the experimental data from our metamaterial based modulator, we show that a four-level ASK digital communication system has two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in transmit signal-to-noise ratio (SNR) using spatial light modulation compared to voltage controlled modulation.

  12. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    NASA Technical Reports Server (NTRS)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  13. Review of terahertz semiconductor sources

    NASA Astrophysics Data System (ADS)

    Wei, Feng

    2012-03-01

    Terahertz (THz) technology can be used in information science, biology, medicine, astronomy, and environmental science. THz sources are the key devices in THz applications. The author gives a brief review of THz semiconductor sources, such as GaAs1-xNx Gunn-like diodes, quantum wells (QWs) negative-effective-mass (NEM) THz oscillators, and the THz quantum cascade lasers (QCLs). THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated. The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system. The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities, acoustic phonons, and optic phonons. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode may be used as an electrically tunable THz source. Meanwhile, by using the Monte Carlo method, the device parameters of resonant-phonon THz QCLs were optimized. The results show that the calculated gain is more sensitive to the injection barrier width, the doping concentration, and the phonon extraction level separation, which is consistent with the experiments.

  14. Phase-locking of a 2.5 THz quantum cascade laser to a frequency comb using a GaAs photomixer.

    PubMed

    Ravaro, M; Manquest, C; Sirtori, C; Barbieri, S; Santarelli, G; Blary, K; Lampin, J-F; Khanna, S P; Linfield, E H

    2011-10-15

    We report the heterodyne detection and phase locking of a 2.5 THz quantum cascade laser (QCL) using a terahertz frequency comb generated in a GaAs photomixer using a femtosecond fiber laser. With 10 mW emitted by the QCL, the phase-locked signal at the intermediate frequency yields 80 dB of signal-to-noise ratio in a bandwidth of 1 Hz.

  15. Microfabricated Circuits for Terahertz Wave Amplification and Terahertz Biosensors

    NASA Astrophysics Data System (ADS)

    Fawole, Olutosin Charles

    The terahertz frequency band extends from deep infrared (100 THz) down to millimeter waves (0.4 THz), and this band was mostly inaccessible due to the lack of appropriate sources and detectors. Those with access to this band had to endure the small-intensity pulsed signals (nanowatts to microwatts) that the terahertz sources of those times could provide. In recent years, however, sufficient development has led to the availability of terahertz sources with sufficient power (1-100 muW) and the ease of use these sources has in turn enabled researchers to develop newer sources, detectors, and application areas. The terahertz regime is interesting because a) many molecules have vibrational, rotation and transition absorption bands in this regime, b) the terahertz electromagnetic wavelength is sufficiently small to resolve centimeter to millimeter scale objects, and c) scattering and absorption in metals in the terahertz regime make it very challenging to devise terahertz signal processing circuits. Thus, performing terahertz reflection/transmission measurements may enable precise identification of chemicals in a sample. Furthermore, small wavelengths and strong scattering by metallic objects make imaging with terahertz waves quite attractive. Finally, the ability to devise terahertz communication circuits and links will provide access to a frequency domain that is restricted and not available to others. One of the main objectives of this work is to develop 0.75 - 1.1 terahertz (free space wavelength 272 mum - 400 ?mum) amplifiers. Another objective of this work is to explore the suitability of terahertz waves in biological imaging and sensing. The terahertz amplifiers developed in this work consisted of distributed components such as rectangular waveguides and cylindrical dielectric resonators. In contrast to discrete amplifiers, which are based on solid-state devices, distributed traveling wave amplifiers can potentially handle and produce larger powers. Three

  16. Two-dimensional profiling of carriers in terahertz quantum cascade lasers using calibrated scanning spreading resistance microscopy and scanning capacitance microscopy.

    PubMed

    Dhar, R S; Ban, D

    2013-07-01

    The distribution of charge carriers inside the active region of a terahertz (THz) quantum cascade laser (QCL) has been measured with scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). Individual quantum well-barrier modules with a 35.7-nm single module thickness in the active region of the device have been resolved for the first time using high-resolution SSRM and SCM techniques at room temperature. SSRM and SCM measurements on the quantum well-barrier structure were calibrated utilizing known GaAs dopant staircase samples. Doping concentrations derived from SSRM and SCM measurements were found to be in quantitative agreement with the designed average doping values of the n-type active region in the terahertz quantum cascade laser. The secondary ion mass spectroscopy provides a partial picture of internal device parameters, and we have demonstrated with our results the efficacy of uniting calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional terahertz quantum cascade laser devices. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

  17. 6.2-GHz modulated terahertz light detection using fast terahertz quantum well photodetectors.

    PubMed

    Li, Hua; Wan, Wen-Jian; Tan, Zhi-Yong; Fu, Zhang-Long; Wang, Hai-Xia; Zhou, Tao; Li, Zi-Ping; Wang, Chang; Guo, Xu-Guang; Cao, Jun-Cheng

    2017-06-14

    The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation are thermal detectors, i.e., pyroelectric sensors and bolometers. This class of terahertz detectors is normally characterized by low modulation frequency (dozens or hundreds of Hz). Here we demonstrate the first fast semiconductor-based terahertz quantum well photodetectors by carefully designing the device structure and microwave transmission line for high frequency signal extraction. Modulation response bandwidth of gigahertz level is obtained. As an example, the 6.2-GHz modulated terahertz light emitted from a Fabry-Pérot terahertz quantum cascade laser is successfully detected using the fast terahertz quantum well photodetector. In addition to the fast terahertz detection, the technique presented in this work can also be used for optically characterizing the frequency stability of terahertz quantum cascade lasers, heterodyne detections and photomixing applications.

  18. Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic buffer

    NASA Astrophysics Data System (ADS)

    Kuznetsov, K. A.; Galiev, G. B.; Kitaeva, G. Kh; Kornienko, V. V.; Klimov, E. A.; Klochkov, A. N.; Leontyev, A. A.; Pushkarev, S. S.; Maltsev, P. P.

    2018-07-01

    The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (1 0 0) and (1 1 1)A crystallographic orientations utilizing step-graded In x Ga1‑x As metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 μm wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3–4 times more effective in the case of InGaAs-based antennas on (1 1 1)A GaAs substrates as compared to the (1 0 0) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.

  19. An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires.

    PubMed

    Baig, Sarwat A; Boland, Jessica L; Damry, Djamshid A; Tan, H Hoe; Jagadish, Chennupati; Joyce, Hannah J; Johnston, Michael B

    2017-04-12

    Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump-terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of -8 dB. We achieve an extinction of over 13% and a dynamic range of -9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

  20. One-way quasiplanar terahertz absorbers using nonstructured polar dielectric layers

    NASA Astrophysics Data System (ADS)

    Rodríguez-Ulibarri, P.; Beruete, M.; Serebryannikov, A. E.

    2017-10-01

    A concept of quasiplanar one-way transparent terahertz absorbers made of linear isotropic materials is presented. The resulting structure consists of a homogeneous absorbing layer of polar dielectric, GaAs, a dispersion-free substrate, and an ultrathin frequency-selective reflector. It is demonstrated that perfect absorption can be obtained for forward illumination, along with total reflection at backward illumination and transparency windows in the adjacent bands. The design is particularized for the polaritonic gap range where permittivity of GaAs varies in a wide range and includes epsilon-near-zero and transparency regimes. The underlying physics can be explained with the aid of a unified equivalent-circuit (EC) analytical model. Perfect matching of input impedance in forward operation and, simultaneously, strong mismatch in the backward case are the universal criteria of one-way absorption. It is shown that perfect one-way absorption can be achieved at rather arbitrary permittivity values, provided these criteria are fulfilled. The EC results are in good agreement with full-wave simulations in a wide range of material and geometrical parameters. The resulting one-way absorbers are very compact and geometrically simple, and enable transparency in the neighboring frequency ranges and, hence, multifunctionality that utilizes both absorption- and transmission-related regimes.

  1. Semiconductor activated terahertz metamaterials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, Hou-Tong

    Metamaterials have been developed as a new class of artificial effective media realizing many exotic phenomena and unique properties not normally found in nature. Metamaterials enable functionality through structure design, facilitating applications by addressing the severe material issues in the terahertz frequency range. Consequently, prototype functional terahertz devices have been demonstrated, including filters, antireflection coatings, perfect absorbers, polarization converters, and arbitrary wavefront shaping devices. Further integration of functional materials into metamaterial structures have enabled actively and dynamically switchable and frequency tunable terahertz metamaterials through the application of external stimuli. The enhanced light-matter interactions in active terahertz metamaterials may result inmore » unprecedented control and manipulation of terahertz radiation, forming the foundation of many terahertz applications. In this paper, we review the progress during the past few years in this rapidly growing research field. We particularly focus on the design principles and realization of functionalities using single-layer and few-layer terahertz planar metamaterials, and active terahertz metamaterials through the integration of semiconductors to achieve switchable and frequency-tunable response.« less

  2. Semiconductor activated terahertz metamaterials

    DOE PAGES

    Chen, Hou-Tong

    2014-08-01

    Metamaterials have been developed as a new class of artificial effective media realizing many exotic phenomena and unique properties not normally found in nature. Metamaterials enable functionality through structure design, facilitating applications by addressing the severe material issues in the terahertz frequency range. Consequently, prototype functional terahertz devices have been demonstrated, including filters, antireflection coatings, perfect absorbers, polarization converters, and arbitrary wavefront shaping devices. Further integration of functional materials into metamaterial structures have enabled actively and dynamically switchable and frequency tunable terahertz metamaterials through the application of external stimuli. The enhanced light-matter interactions in active terahertz metamaterials may result inmore » unprecedented control and manipulation of terahertz radiation, forming the foundation of many terahertz applications. In this paper, we review the progress during the past few years in this rapidly growing research field. We particularly focus on the design principles and realization of functionalities using single-layer and few-layer terahertz planar metamaterials, and active terahertz metamaterials through the integration of semiconductors to achieve switchable and frequency-tunable response.« less

  3. Subwavelength hybrid terahertz waveguides.

    PubMed

    Nam, Sung Hyun; Taylor, Antoinette J; Efimov, Anatoly

    2009-12-07

    We introduce and present general properties of hybrid terahertz waveguides. Weakly confined Zenneck waves on a metal-dielectric interface at terahertz frequencies can be transformed to a strongly confined yet low-loss subwavelength mode through coupling with a photonic mode of a nearby high-index dielectric strip. We analyze confinement, attenuation, and dispersion properties of this mode. The proposed design is suitable for planar integration and allows easy fabrication on chip scale. The superior waveguiding properties at terahertz frequencies could enable the hybrid terahertz waveguides as building blocks for terahertz integrated circuits.

  4. TOPICAL REVIEW: Semiconductors for terahertz photonics applications

    NASA Astrophysics Data System (ADS)

    Krotkus, Arūnas

    2010-07-01

    Generation and measurement of ultrashort, subpicosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of far-infrared spectroscopy and imaging. This technique, THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility and large dark resistivity. Here we will review the most important developments in the field of investigation of such materials. The main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. The main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

  5. Optically thin hybrid cavity for terahertz photo-conductive detectors

    DOE PAGES

    Thompson, Robert J.; Siday, T.; Glass, S.; ...

    2017-01-23

    Here, the efficiency of photoconductive (PC) devices, including terahertz detectors, is constrained by the bulk optical constants of PC materials. Here, we show that optical absorption in a PC layer can be modified substantially within a hybrid cavity containing nanoantennas and a Distributed Bragg Reflector. We find that a hybrid cavity, consisting of a GaAs PC layer of just 50 nm, can be used to absorb >75% of incident photons by trapping the light within the cavity. We provide an intuitive model, which describes the dependence of the optimum operation wavelength on the cavity thickness. We also find that themore » nanoantenna size is a critical parameter, small variations of which lead to both wavelength shifting and reduced absorption in the cavity, suggesting that impedance matching is key for achieving efficient absorption in the optically thin hybrid cavities.« less

  6. A metamaterial terahertz modulator based on complementary planar double-split-ring resonator

    NASA Astrophysics Data System (ADS)

    Wang, Chang-hui; Kuang, Deng-feng; Chang, Sheng-jiang; Lin, Lie

    2013-07-01

    A metamaterial based on complementary planar double-split-ring resonator (DSRR) structure is presented and demonstrated, which can optically tune the transmission of the terahertz (THz) wave. Unlike the traditional DSRR metamaterials, the DSRR discussed in this paper consists of two split rings connected by two bridges. Numerical simulations with the finite-difference time-domain (FDTD) method reveal that the transmission spectra of the original and the complementary metamaterials are both in good agreement with Babinet's principle. Then by increasing the carrier density of the intrinsic GaAs substrate, the magnetic response of the complementary special DSRR metamaterial can be weakened or even turned off. This metamaterial structure is promised to be a narrow-band THz modulator with response time of several nanoseconds.

  7. Coherent two-dimensional terahertz-terahertz-Raman spectroscopy.

    PubMed

    Finneran, Ian A; Welsch, Ralph; Allodi, Marco A; Miller, Thomas F; Blake, Geoffrey A

    2016-06-21

    We present 2D terahertz-terahertz-Raman (2D TTR) spectroscopy, the first technique, to our knowledge, to interrogate a liquid with multiple pulses of terahertz (THz) light. This hybrid approach isolates nonlinear signatures in isotropic media, and is sensitive to the coupling and anharmonicity of thermally activated THz modes that play a central role in liquid-phase chemistry. Specifically, by varying the timing between two intense THz pulses, we control the orientational alignment of molecules in a liquid, and nonlinearly excite vibrational coherences. A comparison of experimental and simulated 2D TTR spectra of bromoform (CHBr3), carbon tetrachloride (CCl4), and dibromodichloromethane (CBr2Cl2) shows previously unobserved off-diagonal anharmonic coupling between thermally populated vibrational modes.

  8. Hydrodynamic electronic fluid instability in GaAs MESFETs at terahertz frequencies

    NASA Astrophysics Data System (ADS)

    Li, Kang; Hao, Yue; Jin, Xiaoqi; Lu, Wu

    2018-01-01

    III-V compound semiconductor field effect transistors (FETs) are potential candidates as solid state THz emitters and detectors due to plasma wave instability in these devices. Using a 2D hydrodynamic model, here we present the numerical studies of electron fluid instability in a FET structure. The model is implemented in a GaAs MESFET structure with a gate length of 0.2 µm as a testbed by taking into account the non-equilibrium transport and multi-valley non-parabolicity energy bands. The results show that the electronic density instability in the channel can produce stable periodic oscillations at THz frequencies. Along with stable oscillations, negative differential resistance in output characteristics is observed. The THz emission energy density increases monotonically with the drain bias. The emission frequency of electron density oscillations can be tuned by both gate and drain biases. The results suggest that III-V FETs can be a kind of versatile THz devices with good tunability on both radiative power and emission frequency.

  9. Terahertz photonic crystals

    NASA Astrophysics Data System (ADS)

    Jian, Zhongping

    This thesis describes the study of two-dimensional photonic crystals slabs with terahertz time domain spectroscopy. In our study we first demonstrate the realization of planar photonic components to manipulate terahertz waves, and then characterize photonic crystals using terahertz pulses. Photonic crystal slabs at the scale of micrometers are first designed and fabricated free of defects. Terahertz time domain spectrometer generates and detects the electric fields of single-cycle terahertz pulses. By putting photonic crystals into waveguide geometry, we successfully demonstrate planar photonic components such as transmission filters, reflection frequency-selective filters, defects modes as well as superprisms. In the characterization study of out-of-plane properties of photonic crystal slabs, we observe very strong dispersion at low frequencies, guided resonance modes at middle frequencies, and a group velocity anomaly at high frequencies. We employ Finite Element Method and Finite-Difference Time-Domain method to simulate the photonic crystals, and excellent agreement is achieved between simulation results and experimental results.

  10. Terahertz metamaterials

    DOEpatents

    Peralta, Xomalin Guaiuli; Brener, Igal; O'Hara, John; Azad, Abul; Smirnova, Evgenya; Williams, John D.; Averitt, Richard D.

    2014-08-12

    Terahertz metamaterials comprise a periodic array of resonator elements disposed on a dielectric substrate or thin membrane, wherein the resonator elements have a structure that provides a tunable magnetic permeability or a tunable electric permittivity for incident electromagnetic radiation at a frequency greater than about 100 GHz and the periodic array has a lattice constant that is smaller than the wavelength of the incident electromagnetic radiation. Microfabricated metamaterials exhibit lower losses and can be assembled into three-dimensional structures that enable full coupling of incident electromagnetic terahertz radiation in two or three orthogonal directions. Furthermore, polarization sensitive and insensitive metamaterials at terahertz frequencies can enable new devices and applications.

  11. Integrated heterodyne terahertz transceiver

    DOEpatents

    Lee, Mark [Albuquerque, NM; Wanke, Michael C [Albuquerque, NM

    2009-06-23

    A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. An antenna connected to the Schottky diode receives a terahertz signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

  12. Terahertz magnonics: Feasibility of using terahertz magnons for information processing

    NASA Astrophysics Data System (ADS)

    Zakeri, Khalil

    2018-06-01

    An immediate need of information technology is designing fast, small and low-loss devices. One of the ways to design such devices is using the bosonic quasiparticles, such as magnons, for information transfer/processing. This is the main idea behind the field of magnonics. When a magnon propagates through a magnetic medium, no electrical charge transport is involved and therefore no energy losses, creating Joule heating, occur. This is the most important advantage of using magnons for information transfer. Moreover the mutual conversion between magnons and the other carriers e.g. electrons, photons and plasmons shall open new opportunities to realize tunable multifunctional devices. Magnons cover a very wide range of frequency, from sub-gigahertz up to a few hundreds of terahertz. The magnon frequency has an important impact on the performance of magnon-based devices (the larger the excitation frequency, the faster the magnons). This means that the use of high-frequency (terahertz) magnons would provide a great opportunity for the design of ultrafast devices. However, up to now the focus in magnonics has been on the low-frequency gigahertz magnons. Here we discuss the feasibility of using terahertz magnons for application in magnonic devices. We shall bring the concept of terahertz magnonics into discussion. We discuss how the recently discovered phenomena in the field of terahertz magnons may inspire ideas for designing new magnonic devices. We further introduce methods to tune the fundamental properties of terahertz magnons, e.g. their eigenfrequency and lifetime.

  13. Imaging with terahertz radiation

    NASA Astrophysics Data System (ADS)

    Chan, Wai Lam; Deibel, Jason; Mittleman, Daniel M.

    2007-08-01

    Within the last several years, the field of terahertz science and technology has changed dramatically. Many new advances in the technology for generation, manipulation, and detection of terahertz radiation have revolutionized the field. Much of this interest has been inspired by the promise of valuable new applications for terahertz imaging and sensing. Among a long list of proposed uses, one finds compelling needs such as security screening and quality control, as well as whimsical notions such as counting the almonds in a bar of chocolate. This list has grown in parallel with the development of new technologies and new paradigms for imaging and sensing. Many of these proposed applications exploit the unique capabilities of terahertz radiation to penetrate common packaging materials and provide spectroscopic information about the materials within. Several of the techniques used for terahertz imaging have been borrowed from other, more well established fields such as x-ray computed tomography and synthetic aperture radar. Others have been developed exclusively for the terahertz field, and have no analogies in other portions of the spectrum. This review provides a comprehensive description of the various techniques which have been employed for terahertz image formation, as well as discussing numerous examples which illustrate the many exciting potential uses for these emerging technologies.

  14. High-resolution reconstruction for terahertz imaging.

    PubMed

    Xu, Li-Min; Fan, Wen-Hui; Liu, Jia

    2014-11-20

    We present a high-resolution (HR) reconstruction model and algorithms for terahertz imaging, taking advantage of super-resolution methodology and algorithms. The algorithms used include projection onto a convex sets approach, iterative backprojection approach, Lucy-Richardson iteration, and 2D wavelet decomposition reconstruction. Using the first two HR reconstruction methods, we successfully obtain HR terahertz images with improved definition and lower noise from four low-resolution (LR) 22×24 terahertz images taken from our homemade THz-TDS system at the same experimental conditions with 1.0 mm pixel. Using the last two HR reconstruction methods, we transform one relatively LR terahertz image to a HR terahertz image with decreased noise. This indicates potential application of HR reconstruction methods in terahertz imaging with pulsed and continuous wave terahertz sources.

  15. Integrated heterodyne terahertz transceiver

    DOEpatents

    Wanke, Michael C [Albuquerque, NM; Lee, Mark [Albuquerque, NM; Nordquist, Christopher D [Albuquerque, NM; Cich, Michael J [Albuquerque, NM

    2012-09-25

    A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. A terahertz signal can be received by an antenna connected to the mixer, an end facet or sidewall of the laser, or through a separate active section that can amplify the incident signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

  16. Near-Field Terahertz Transmission Imaging at 0.210 Terahertz Using a Simple Aperture Technique

    DTIC Science & Technology

    2015-10-01

    This report discusses a simple aperture useful for terahertz near-field imaging at .2010 terahertz ( lambda = 1.43 millimeters). The aperture requires...achieve a spatial resolution of lambda /7. The aperture can be scaled with the assistance of machinery found in conventional machine shops to achieve similar results using shorter terahertz wavelengths.

  17. Terahertz control of nanotip photoemission

    NASA Astrophysics Data System (ADS)

    Wimmer, L.; Herink, G.; Solli, D. R.; Yalunin, S. V.; Echternkamp, K. E.; Ropers, C.

    2014-06-01

    The active control of matter by strong electromagnetic fields is of growing importance, with applications all across the optical spectrum from the extreme-ultraviolet to the far-infrared. In recent years, phase-stable terahertz fields have shown tremendous potential for observing and manipulating elementary excitations in solids. In the gas phase, on the other hand, driving free charges with terahertz transients provides insight into ultrafast ionization dynamics. Developing such approaches for locally enhanced terahertz fields in nanostructures will create new means to govern electron currents on the nanoscale. Here, we use single-cycle terahertz transients to demonstrate extensive control over nanotip photoelectron emission. The terahertz near-field is shown to either enhance or suppress photocurrents, with the tip acting as an ultrafast rectifying diode. We record phase-resolved sub-cycle dynamics and find spectral compression and expansion arising from electron propagation within the terahertz near-field. These interactions produce rich spectro-temporal features and offer unprecedented control over ultrashort free electron pulses for imaging and diffraction.

  18. Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gayduchenko, I., E-mail: igorandg@gmail.com, E-mail: gefedorov@mail.ru; National Research Centre “Kurchatov Institute,” Moscow 123128; Kardakova, A.

    2015-11-21

    Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DCmore » voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.« less

  19. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.

    2016-10-15

    The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

  20. Microprocessor design for GaAs technology

    NASA Astrophysics Data System (ADS)

    Milutinovic, Veljko M.

    Recent advances in the design of GaAs microprocessor chips are examined in chapters contributed by leading experts; the work is intended as reading material for a graduate engineering course or as a practical R&D reference. Topics addressed include the methodology used for the architecture, organization, and design of GaAs processors; GaAs device physics and circuit design; design concepts for microprocessor-based GaAs systems; a 32-bit GaAs microprocessor; a 32-bit processor implemented in GaAs JFET; and a direct coupled-FET-logic E/D-MESFET experimental RISC machine. Drawings, micrographs, and extensive circuit diagrams are provided.

  1. Terahertz radiation mixer

    DOEpatents

    Wanke, Michael C [Albuquerque, NM; Allen, S James [Santa Barbara, CA; Lee, Mark [Albuquerque, NM

    2008-05-20

    A terahertz radiation mixer comprises a heterodyned field-effect transistor (FET) having a high electron mobility heterostructure that provides a gatable two-dimensional electron gas in the channel region of the FET. The mixer can operate in either a broadband pinch-off mode or a narrowband resonant plasmon mode by changing a grating gate bias of the FET. The mixer can beat an RF signal frequency against a local oscillator frequency to generate an intermediate frequency difference signal in the microwave region. The mixer can have a low local oscillator power requirement and a large intermediate frequency bandwidth. The terahertz radiation mixer is particularly useful for terahertz applications requiring high resolution.

  2. Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation.

    PubMed

    Bietti, Sergio; Basso Basset, Francesco; Scarpellini, David; Fedorov, Alexey; Ballabio, Andrea; Esposito, Luca; Elborg, Martin; Kuroda, Takashi; Nemcsics, Akos; Toth, Lajos; Manzoni, Cristian; Vozzi, Caterina; Sanguinetti, Stefano

    2018-06-18

    A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule fabrication and the metal nanoparticle alignment is discussed. The tuning of the relative positioning of quantum dot molecules and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical quantum dot molecule was evaluated on the base of the morphological characterizations performed by Atomic Force Microscopy and cross sectional Scanning Electron Microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition. . © 2018 IOP Publishing Ltd.

  3. Fingerprint extraction from interference destruction terahertz spectrum.

    PubMed

    Xiong, Wei; Shen, Jingling

    2010-10-11

    In this paper, periodic peaks in a terahertz absorption spectrum are confirmed to be induced from interference effects. Theoretically, we explained the periodic peaks and calculated the locations of them. Accordingly, a technique was suggested, with which the interference peaks in a terahertz spectrum can be eliminated and therefore a real terahertz absorption spectrum can be obtained. Experimentally, a sample, Methamphetamine, was investigated and its terahertz fingerprint was successfully extracted from its interference destruction spectrum. This technique is useful in getting samples' terahertz fingerprint spectra, and furthermore provides a fast nondestructive testing method using a large size terahertz beam to identify materials.

  4. Simulations of terahertz pulse emission from thin-film semiconductor structures

    NASA Astrophysics Data System (ADS)

    Semichaevsky, Andrey

    The photo-Dember effect is the formation of transient electric dipoles due to the interaction of semiconductors with ultrashort optical pulses. Typically the optically-induced dipole moments vary on the ns- or ps- scales, leading to the emission of electromagnetic pulses with terahertz (THz) bandwidths. One of the applications of the photo-Dember effect is a photoconductive dipole antenna (PDA). This work presents a computational model of a PDA based on Maxwell's equations coupled to the Boltzmann transport equation. The latter is solved semiclassically for the doped GaAs using a continuum approach. The emphasis is on the accurate prediction of the emitted THz pulse shape and bandwidth, particularly when materials are doped with a rare-earth metal such as erbium or terbium that serve as carrier recombination centers. Field-dependent carrier mobility is determined from particle-based simulations. Some of the previous experimental results are used as a basis for comparison with our model.

  5. [Application of terahertz technology in medical testing and diagnosis].

    PubMed

    Qi, Na; Zhang, Zhuo-Yong; Xiang, Yu-Hong

    2013-08-01

    Terahertz science and technology is increasingly emphasized in science and industry, and has progressed significantly in recent years. There is an important aspect of attention in the application of terahertz technology to medicine. The overview of the terahertz characters, terahertz spectroscopy and terahertz imaging technology is introduced. This paper focuses on reviewing the use of and research progress in terahertz spectroscopy and terahertz imaging technology in medical testing and diagnosis. Furthermore, the problems to be solved and development directions of terahertz spectroscopy and terahertz imaging technology are discussed.

  6. Toward practical terahertz time-domain spectroscopy

    NASA Astrophysics Data System (ADS)

    Brigada, David J.

    Terahertz time-domain spectroscopy is a promising technology for the identification of explosive and pharmaceutical substances in adverse conditions. It interacts strongly with intermolecular vibrational and rotational modes. Terahertz also passes through many common dielectric covering materials, allowing for the identification of substances in envelopes, wrapped in opaque plastic, or otherwise hidden. However, there are several challenges preventing the adoption of terahertz spectroscopy outside the laboratory. This dissertation examines the problems preventing widespread adoption of terahertz technology and attempts to resolve them. In order to use terahertz spectroscopy to identify substances, a spectrum measured of the target sample must be compared to the spectra of various known standard samples. This dissertation examines various methods that can be employed throughout the entire process of acquiring and transforming terahertz waveforms to improve the accuracy of these comparisons. The concepts developed in this dissertation directly apply to terahertz spectroscopy, but also carry implications for other spectroscopy methods, from Raman to mass spectrometry. For example, these techniques could help to lower the rate of false positives at airport security checkpoints. This dissertation also examines the implementation of several of these methods as a way to realize a fully self-contained, handheld, battery-operated terahertz spectrometer. This device also employs techniques to allow minimally-trained operators use terahertz to detect different substances of interest. It functions as a proof-of-concept of the true benefits of the improvements that have been developed in this dissertation.

  7. Toward remote sensing with broadband terahertz waves

    NASA Astrophysics Data System (ADS)

    Clough, Benjamin W.

    Terahertz electromagnetic waves, defined as the frequency region between 0.1 and 10 terahertz on the electromagnetic spectrum, have demonstrated remarkable usefulness for imaging and chemical identification with the ability to penetrate many optically opaque barriers. Photon energies at these frequencies are relatively small (meV), which means the radiation is non-ionizing and therefore considered biologically innocuous. With the growing list of applications and demand for terahertz technology, there is a need to develop innovative terahertz sources and detectors that can overcome existing limitations in power, bandwidth, and operating range. Although terahertz radiation has demonstrated unique and exceptional abilities, it has also presented several fundamental challenges. Most notably, the water vapor absorption of terahertz waves in air at habitable altitudes is greater than 100 dB/km. There is an immediate push to utilize the material and vapor identification abilities of terahertz radiation, while extending the effective distances over which the technology can be used. Remote terahertz detection, until recently, was thought to be impossible due to the high water content in the atmosphere, limited signal collection geometries, and solid state materials necessary for generation and detection. This dissertation focuses on laser air-photonics used for sensing short pulses of electromagnetic radiation. Through the ionization process, the very air that we breathe is capable of generating terahertz field strengths greater than 1 MV/cm, useful bandwidths over 100 terahertz, and highly directional emission patterns. Following ionization and plasma formation, the emitted plasma acoustics or fluorescence can be modulated by an external field to serve as omnidirectional, broadband, electromagnetic sensor. A deeper understanding of terahertz wave-plasma interaction is used to develop methods for retrieving coherent terahertz wave information that can be encoded into plasma

  8. Nanoplasmonic-gold-cylinder-array-enhanced terahertz source

    NASA Astrophysics Data System (ADS)

    Zhiguang, Ao; Jinhai, Sun; He, Cai; Guofeng, Song; Jiakun, Song; Yuzhi, Song; Yun, Xu

    2016-12-01

    Photoconductive antennas (PCAs) based on nanoplasmonic gratings contact electrodes have been proposed to satisfy the demand for high power, efficiency and responsivity terahertz (THz) sources. Reducing the average photo-generated carrier transport path to the photoconductor contact electrodes was previously considered the dominant mechanism to improve PCAs' power. However, considering the bias in a real device, the electric field between gratings is limited and the role of surface plasmonic resonance (SPR) field enhancement is more important in improving THz radiation. This paper, based on SPR, analyzes the interaction between incident light and substrate in nano cylinder array PCAs and clearly shows that the SPR can enhance the light absorption in the substrate. After the optimization of the structure size, the proposed structure can offer 87% optical transmission into GaAs substrate. Compared with conventional PCAs, the optical transmission into the substrate will increase 5.8 times and the enhancement factor of substrate absorption will reach 13.7 respectively. Project supported by the National Basic Research Program of China (Nos. 2015CB351902, 2015CB932402), the National Key Research Program of China (No. 2011ZX01015-001), and the National Natural Science Foundation of China (No. U143231).

  9. Active Metamaterials for Terahertz Communication and Imaging

    NASA Astrophysics Data System (ADS)

    Rout, Saroj

    In recent years there has been significant interest in terahertz (THz) systems mostly due to their unique applications in communication and imaging. One of the primary reason for this resurgence is the use of metamaterials to design THz devices due to lack of natural materials that can respond to this electromagnetic spectrum, the so-called ''THz gap''. Even after years of intense research, THz systems are complex and expensive, unsuitable for mainstream applications. This work focuses on bridging this gap by building all solid-state THz devices for imaging and communication applications in a commercial integrated circuit (IC) technology. One such canonical device is a THz wave modulator that can be used in THz wireless communication devices and as spatial light modulator (SLM) for THz imaging systems. The key contribution of this thesis is a metamaterial based THz wave modulator fabricated in a commercial gallium arsenide (GaAs) process resonant at 0.46 THz using a novel approach of embedding pseudomorphic high electron mobility transistors (pHEMTs) in metamaterial and demonstrate modulation values over 30%, and THz modulation at frequencies up to 10 MHz. Using the THz wave modulator, we fabricated and experimentally demonstrated an all solid-state metamaterial based THz spatial light modulator (SLM) as a 2x2 pixel array operating around 0.46 THz, by raster scanning an occluded metal object in polystyrene using a single-pixel imaging setup. This was an important step towards building an low-voltage (1V), low power, on-chip integrable THz imaging device. Using the characterization result from the THz SLM, we computationally demonstrated a multi-level amplitude shift keying (ASK) terahertz wireless communication system using spatial light modulation instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. We show two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in

  10. Excitation and De-Excitation Mechanisms of Er-Doped GaAs and A1GaAs.

    DTIC Science & Technology

    1992-12-01

    AD-A258 814 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs DISSERTATION David W. Elsaesser, Captain, USAF DTICY. ft £ICTE’’ )AN...0 8 1993U -o Wo- .%Approved for public release; Distribution unlimited 93 1 04 022 AFIT/DS/ENP/92-5 EXCITATION AND DE -EXCITATION MECHANISMS OF Er...public release; Distribution unlimited AFIT/DS/ENP/92D-005 EXCITATION AND DE -EXCITATION MECHANISMS OF Er-DOPED GaAs AND A1GaAs 4 toFlor -- David W

  11. GaAs Computer Technology

    DTIC Science & Technology

    1992-01-07

    AD-A259 259 FASTC-ID FOREIGN AEROSPACE SCIENCE AND TECHNOLOGY CENTER GaAs COMPUTER TECHNOLOGY (1) by Wang Qiao-yu 93-00999 Distrir bution t,,,Nm ted...FASTC- ID(RS)T-0310-92 HUMAN TRANSLATION FASTC-ID(RS)T-0310-92 7 January 1993 GaAs COMPUTER TECHNOLOGY (1) By: Wang Qiao-yu English pages: 6 Source...the best quality copy available. j C] " ------ GaAs Computer Technology (1) Wang Qiao-yu (Li-Shan Microelectronics Institute) Abstract: The paper

  12. Detection prospects of light NMSSM Higgs pseudoscalar via cascades of heavier scalars from vector boson fusion and Higgs-strahlung

    NASA Astrophysics Data System (ADS)

    Bomark, N.-E.; Moretti, S.; Roszkowski, L.

    2016-10-01

    A detection at the large hadron collider of a light Higgs pseudoscalar would, if interpreted in a supersymmetric framework, be a smoking gun signature of non-minimal supersymmetry. In this work in the framework of the next-to-minimal supersymmetric standard model we focus on vector boson fusion and Higgs-strahlung production of heavier scalars that subsequently decay into pairs of light pseudoscalars. We demonstrate that although these channels have in general very limited reach, they are viable for the detection of light pseudoscalars in some parts of parameter space and can serve as an important complementary probe to the dominant gluon-fusion production mode. We also demonstrate that in a Higgs factory these channels may reach sensitivities comparable to or even exceeding the gluon fusion channels at the Large Hadron Collider, thus possibly rendering this our best option to discover a light pseudoscalar. It is also worth mentioning that for the singlet dominated scalar this may be the only way to measure its couplings to gauge bosons. Especially promising are channels where the initial scalar is radiated off a W as these events have relatively high rates and provide substantial background suppression due to leptons from the W. We identify three benchmark points that well represent the above scenarios. Assuming that the masses of the scalars and pseudoscalars are already measured in the gluon-fusion channel, the event kinematics can be further constrained, hence significantly improving detection prospects. This is especially important in the Higgs-strahlung channels with rather heavy scalars, and results in possible detection at 200 fb-1 for the most favoured parts of the parameter space.

  13. Terahertz molecular resonance of cancer DNA.

    PubMed

    Cheon, Hwayeong; Yang, Hee-Jin; Lee, Sang-Hun; Kim, Young A; Son, Joo-Hiuk

    2016-11-15

    Carcinogenesis involves the chemical and structural alteration of biomolecules in cells. Aberrant methylation of DNA is a well-known carcinogenic mechanism and a common chemical modification of DNA. Terahertz waves can directly observe changes in DNA because the characteristic energies lie in the same frequency region. In addition, terahertz energy levels are not high enough to damage DNA by ionization. Here, we present terahertz molecular resonance fingerprints of DNA methylation in cancer DNA. Methylated cytidine, a nucleoside, has terahertz characteristic energies that give rise to the molecular resonance of methylation in DNA. Molecular resonance is monitored in aqueous solutions of genomic DNA from cancer cell lines using a terahertz time-domain spectroscopic technique. Resonance signals can be quantified to identify the types of cancer cells with a certain degree of DNA methylation. These measurements reveal the existence of molecular resonance fingerprints of cancer DNAs in the terahertz region, which can be utilized for the early diagnosis of cancer cells at the molecular level.

  14. Terahertz molecular resonance of cancer DNA

    NASA Astrophysics Data System (ADS)

    Cheon, Hwayeong; Yang, Hee-Jin; Lee, Sang-Hun; Kim, Young A.; Son, Joo-Hiuk

    2016-11-01

    Carcinogenesis involves the chemical and structural alteration of biomolecules in cells. Aberrant methylation of DNA is a well-known carcinogenic mechanism and a common chemical modification of DNA. Terahertz waves can directly observe changes in DNA because the characteristic energies lie in the same frequency region. In addition, terahertz energy levels are not high enough to damage DNA by ionization. Here, we present terahertz molecular resonance fingerprints of DNA methylation in cancer DNA. Methylated cytidine, a nucleoside, has terahertz characteristic energies that give rise to the molecular resonance of methylation in DNA. Molecular resonance is monitored in aqueous solutions of genomic DNA from cancer cell lines using a terahertz time-domain spectroscopic technique. Resonance signals can be quantified to identify the types of cancer cells with a certain degree of DNA methylation. These measurements reveal the existence of molecular resonance fingerprints of cancer DNAs in the terahertz region, which can be utilized for the early diagnosis of cancer cells at the molecular level.

  15. Terahertz technology for imaging and spectroscopy

    NASA Astrophysics Data System (ADS)

    Crowe, T. W.; Porterfield, D. W.; Hesler, J. L.; Bishop, W. L.; Kurtz, D. S.; Hui, K.

    2006-05-01

    The terahertz region of the electromagnetic spectrum has unique properties that make it especially useful for imaging and spectroscopic detection of concealed weapons, explosives and chemical and biological materials. However, terahertz energy is difficult to generate and detect, and this has led to a technology gap in this frequency band. Nonlinear diodes can be used to bridge this gap by translating the functionality achieved at microwave frequencies to the terahertz band. Basic building blocks include low-noise mixers, frequency multipliers, sideband generators and direct detectors. These terahertz components rely on planar Schottky diodes and recently developed integrated diode circuits make them easier to assemble and more robust. The new generation of terahertz sources and receivers requires no mechanical tuning, yet achieves high efficiency and broad bandwidth. This paper reviews the basic design of terahertz transmitters and receivers, with special emphasis on the recent development of systems that are compact, easy to use and have excellent performance.

  16. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  17. Elliptically polarized terahertz radiation from a chiral oxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Takeda, R.; Kida, N., E-mail: kida@k.u-tokyo.ac.jp; Sotome, M.

    2015-09-28

    Polarization control of terahertz wave is a challenging subject in terahertz science and technology. Here, we report a simple method to control polarization state of the terahertz wave in terahertz generation process. At room temperature, terahertz radiation from a noncentrosymmetric and chiral oxide, sillenite Bi{sub 12}GeO{sub 20}, is observed by the irradiation of linearly polarized femtosecond laser pulses at 800 nm. The polarization state of the emitted terahertz wave is found to be elliptic with an ellipticity of ∼0.37 ± 0.10. Furthermore, the ellipticity was altered to a nearly zero (∼0.01 ± 0.01) by changing the polarization of the incident linearly polarized femtosecond laser pulses.more » Such a terahertz radiation characteristic is attributable to variation of the polarization state of the emitted terahertz waves, which is induced by retardation due to the velocity mismatch between the incident femtosecond laser pulse and generated terahertz wave and by the polarization tilting due to the optical activity at 800 nm.« less

  18. Application of Terahertz Field Enhancement Effect in Metal Microstructures

    NASA Astrophysics Data System (ADS)

    Nakajima, M.; Kurihara, T.; Tadokoro, Y.; Kang, B.; Takano, K.; Yamaguchi, K.; Watanabe, H.; Oto, K.; Suemoto, T.; Hangyo, M.

    2016-12-01

    Applications of high-field terahertz pulses are attractive in physics and terahertz technology. In this study, two applications related to high-intensity terahertz pulses are demonstrated. The field enhancement effect by subwavelength metallic microstructures is utilized for terahertz excitation measurement. The spin precession dynamics in magnetic materials was induced by a terahertz magnetic field. Spin precession was amplified by one order of magnitude in amplitude by the enhanced magnetic terahertz field in orthoferrite ErFeO3 with metal microstructures. The induced spin dynamics was analyzed and explained by LLG-LCR model. Moreover, a detection method for terahertz pulses was developed using a cholesteric liquid crystal at room temperature without any electronic devices. The beam profile of terahertz pulses was visualized and compared to other methods such as the knife edge method using pyroelectric detector and micro-bolometer array. The liquid crystal terahertz imager is very simple and has good applicability as a portable terahertz-sensing card.

  19. Terahertz imaging with compressive sensing

    NASA Astrophysics Data System (ADS)

    Chan, Wai Lam

    Most existing terahertz imaging systems are generally limited by slow image acquisition due to mechanical raster scanning. Other systems using focal plane detector arrays can acquire images in real time, but are either too costly or limited by low sensitivity in the terahertz frequency range. To design faster and more cost-effective terahertz imaging systems, the first part of this thesis proposes two new terahertz imaging schemes based on compressive sensing (CS). Both schemes can acquire amplitude and phase-contrast images efficiently with a single-pixel detector, thanks to the powerful CS algorithms which enable the reconstruction of N-by- N pixel images with much fewer than N2 measurements. The first CS Fourier imaging approach successfully reconstructs a 64x64 image of an object with pixel size 1.4 mm using a randomly chosen subset of the 4096 pixels which defines the image in the Fourier plane. Only about 12% of the pixels are required for reassembling the image of a selected object, equivalent to a 2/3 reduction in acquisition time. The second approach is single-pixel CS imaging, which uses a series of random masks for acquisition. Besides speeding up acquisition with a reduced number of measurements, the single-pixel system can further cut down acquisition time by electrical or optical spatial modulation of random patterns. In order to switch between random patterns at high speed in the single-pixel imaging system, the second part of this thesis implements a multi-pixel electrical spatial modulator for terahertz beams using active terahertz metamaterials. The first generation of this device consists of a 4x4 pixel array, where each pixel is an array of sub-wavelength-sized split-ring resonator elements fabricated on a semiconductor substrate, and is independently controlled by applying an external voltage. The spatial modulator has a uniform modulation depth of around 40 percent across all pixels, and negligible crosstalk, at the resonant frequency. The

  20. Metal wires for terahertz wave guiding.

    PubMed

    Wang, Kanglin; Mittleman, Daniel M

    2004-11-18

    Sources and systems for far-infrared or terahertz (1 THz = 10(12) Hz) radiation have received extensive attention in recent years, with applications in sensing, imaging and spectroscopy. Terahertz radiation bridges the gap between the microwave and optical regimes, and offers significant scientific and technological potential in many fields. However, waveguiding in this intermediate spectral region still remains a challenge. Neither conventional metal waveguides for microwave radiation, nor dielectric fibres for visible and near-infrared radiation can be used to guide terahertz waves over a long distance, owing to the high loss from the finite conductivity of metals or the high absorption coefficient of dielectric materials in this spectral range. Furthermore, the extensive use of broadband pulses in the terahertz regime imposes an additional constraint of low dispersion, which is necessary for compatibility with spectroscopic applications. Here we show how a simple waveguide, namely a bare metal wire, can be used to transport terahertz pulses with virtually no dispersion, low attenuation, and with remarkable structural simplicity. As an example of this new waveguiding structure, we demonstrate an endoscope for terahertz pulses.

  1. Imaging of ex vivo nonmelanoma skin cancers in the optical and terahertz spectral regions optical and terahertz skin cancers imaging.

    PubMed

    Joseph, Cecil S; Patel, Rakesh; Neel, Victor A; Giles, Robert H; Yaroslavsky, Anna N

    2014-05-01

    We tested the hypothesis that polarization sensitive optical and terahertz imaging may be combined for accurate nonmelanoma skin cancer (NMSC) delineation. Nine NMSC specimens were imaged. 513 μm and 440 nm wavelengths were used for terahertz and optical imaging, respectively. Histopathology was processed for evaluation. Terahertz reflectance of NMSC was quantified. Our results demonstrate that cross-polarized terahertz images correctly identified location of the tumours, whereas cross-polarized and polarization difference optical images accurately presented morphological features. Cross-polarized terahertz images exhibited lower reflectivity values in cancer as compared to normal tissue. Combination of optical and terahertz imaging shows promise for intraoperative delineation of NMSC. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. [Terahertz Spectroscopic Identification with Deep Belief Network].

    PubMed

    Ma, Shuai; Shen, Tao; Wang, Rui-qi; Lai, Hua; Yu, Zheng-tao

    2015-12-01

    Feature extraction and classification are the key issues of terahertz spectroscopy identification. Because many materials have no apparent absorption peaks in the terahertz band, it is difficult to extract theirs terahertz spectroscopy feature and identify. To this end, a novel of identify terahertz spectroscopy approach with Deep Belief Network (DBN) was studied in this paper, which combines the advantages of DBN and K-Nearest Neighbors (KNN) classifier. Firstly, cubic spline interpolation and S-G filter were used to normalize the eight kinds of substances (ATP, Acetylcholine Bromide, Bifenthrin, Buprofezin, Carbazole, Bleomycin, Buckminster and Cylotriphosphazene) terahertz transmission spectra in the range of 0.9-6 THz. Secondly, the DBN model was built by two restricted Boltzmann machine (RBM) and then trained layer by layer using unsupervised approach. Instead of using handmade features, the DBN was employed to learn suitable features automatically with raw input data. Finally, a KNN classifier was applied to identify the terahertz spectrum. Experimental results show that using the feature learned by DBN can identify the terahertz spectrum of different substances with the recognition rate of over 90%, which demonstrates that the proposed method can automatically extract the effective features of terahertz spectrum. Furthermore, this KNN classifier was compared with others (BP neural network, SOM neural network and RBF neural network). Comparisons showed that the recognition rate of KNN classifier is better than the other three classifiers. Using the approach that automatic extract terahertz spectrum features by DBN can greatly reduce the workload of feature extraction. This proposed method shows a promising future in the application of identifying the mass terahertz spectroscopy.

  3. Tutorial: Terahertz beamforming, from concepts to realizations

    NASA Astrophysics Data System (ADS)

    Headland, Daniel; Monnai, Yasuaki; Abbott, Derek; Fumeaux, Christophe; Withayachumnankul, Withawat

    2018-05-01

    The terahertz range possesses significant untapped potential for applications including high-volume wireless communications, noninvasive medical imaging, sensing, and safe security screening. However, due to the unique characteristics and constraints of terahertz waves, the vast majority of these applications are entirely dependent upon the availability of beam control techniques. Thus, the development of advanced terahertz-range beam control techniques yields a range of useful and unparalleled applications. This article provides an overview and tutorial on terahertz beam control. The underlying principles of wavefront engineering include array antenna theory and diffraction optics, which are drawn from the neighboring microwave and optical regimes, respectively. As both principles are applicable across the electromagnetic spectrum, they are reconciled in this overview. This provides a useful foundation for investigations into beam control in the terahertz range, which lies between microwaves and infrared light. Thereafter, noteworthy experimental demonstrations of beam control in the terahertz range are discussed, and these include geometric optics, phased array devices, leaky-wave antennas, reflectarrays, and transmitarrays. These techniques are compared and contrasted for their suitability in applications of terahertz waves.

  4. Squeezing terahertz light into nanovolumes: nanoantenna enhanced terahertz spectroscopy (NETS) of semiconductor quantum dots.

    PubMed

    Toma, Andrea; Tuccio, Salvatore; Prato, Mirko; De Donato, Francesco; Perucchi, Andrea; Di Pietro, Paola; Marras, Sergio; Liberale, Carlo; Proietti Zaccaria, Remo; De Angelis, Francesco; Manna, Liberato; Lupi, Stefano; Di Fabrizio, Enzo; Razzari, Luca

    2015-01-14

    Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.

  5. Switching terahertz wave with grating-coupled Kretschmann configuration.

    PubMed

    Jiu-Sheng, Li

    2017-08-07

    We present a terahertz wave switch utilizing Kretschmann configuration which consists of high-refractive-index prism-liquid crystal-periodically grooved metal grating. The switching mechanism of the terahertz switch is based on spoof surface plasmon polariton (SSPP) excitation in the attenuated total reflection regime by changing the liquid crystal refractive index. The results highlighted the fact that the feasibility to "tune" the attenuated total reflection terahertz wave intensity by using the external applied bias voltage. The extinction ratio of the terahertz switch reaches 31.48dB. The terahertz switch has good control ability and flexibility, and can be used in potential terahertz free space device systems.

  6. Nonlinear terahertz coherent excitation of vibrational modes of liquids.

    PubMed

    Allodi, Marco A; Finneran, Ian A; Blake, Geoffrey A

    2015-12-21

    We report the first coherent excitation of intramolecular vibrational modes via the nonlinear interaction of a TeraHertz (THz) light field with molecular liquids. A terahertz-terahertz-Raman pulse sequence prepares the coherences with a broadband, high-energy, (sub)picosecond terahertz pulse, that are then measured in a terahertz Kerr effect spectrometer via phase-sensitive, heterodyne detection with an optical pulse. The spectrometer reported here has broader terahertz frequency coverage, and an increased sensitivity relative to previously reported terahertz Kerr effect experiments. Vibrational coherences are observed in liquid diiodomethane at 3.66 THz (122 cm(-1)), and in carbon tetrachloride at 6.50 THz (217 cm(-1)), in exact agreement with literature values of those intramolecular modes. This work opens the door to 2D spectroscopies, nonlinear in terahertz field, that can study the dynamics of condensed-phase molecular systems, as well as coherent control at terahertz frequencies.

  7. Video-rate terahertz electric-field vector imaging

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Takai, Mayuko; Takeda, Masatoshi; Sasaki, Manabu

    We present an experimental setup to dramatically reduce a measurement time for obtaining spatial distributions of terahertz electric-field (E-field) vectors. The method utilizes the electro-optic sampling, and we use a charge-coupled device to detect a spatial distribution of the probe beam polarization rotation by the E-field-induced Pockels effect in a 〈110〉-oriented ZnTe crystal. A quick rotation of the ZnTe crystal allows analyzing the terahertz E-field direction at each image position, and the terahertz E-field vector mapping at a fixed position of an optical delay line is achieved within 21 ms. Video-rate mapping of terahertz E-field vectors is likely to bemore » useful for achieving real-time sensing of terahertz vector beams, vector vortices, and surface topography. The method is also useful for a fast polarization analysis of terahertz beams.« less

  8. Terahertz Technology: A Boon to Tablet Analysis

    PubMed Central

    Wagh, M. P.; Sonawane, Y. H.; Joshi, O. U.

    2009-01-01

    The terahertz gap has a frequency ranges from ∼0.3 THz to ∼10 THz in the electromagnetic spectrum which is in between microwave and infrared. The terahertz radiations are invisible to naked eye. In comparison with x-ray they are intrinsically safe, non-destructive and non-invasive. Terahertz spectroscopy enables 3D imaging of structures and materials, and the measurement of the unique spectral fingerprints of chemical and physical forms. Terahertz radiations are produced by a dendrimer based high power terahertz source and spectroscopy technologies. It resolves many of the questions left unanswered by complementary techniques, such as optical imaging, Raman and infrared spectra. In the pharmaceutical industries it enables nondestructive, internal, chemical analysis of tablets, capsules, and other dosage forms. Tablet coatings are a major factor in drug bioavailability. Therefore tablet coatings integrity and uniformity are of crucial importance to quality. Terahertz imaging gives an unparalleled certainty about the integrity of tablet coatings and the matrix performance of tablet cores. This article demonstrates the potential of terahertz pulse imaging for the analysis of tablet coating thickness by illustrating the technique on tablets. PMID:20490288

  9. Terahertz plasmonic Bessel beamformer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Monnai, Yasuaki; Shinoda, Hiroyuki; Jahn, David

    We experimentally demonstrate terahertz Bessel beamforming based on the concept of plasmonics. The proposed planar structure is made of concentric metallic grooves with a subwavelength spacing that couple to a point source to create tightly confined surface waves or spoof surface plasmon polaritons. Concentric scatterers periodically incorporated at a wavelength scale allow for launching the surface waves into free space to define a Bessel beam. The Bessel beam defined at 0.29 THz has been characterized through terahertz time-domain spectroscopy. This approach is capable of generating Bessel beams with planar structures as opposed to bulky axicon lenses and can be readily integratedmore » with solid-state terahertz sources.« less

  10. Two-well terahertz quantum cascade lasers with suppressed carrier leakage

    NASA Astrophysics Data System (ADS)

    Albo, Asaf; Flores, Yuri V.; Hu, Qing; Reno, John L.

    2017-09-01

    The mechanisms that limit the temperature performance of diagonal GaAs/Al0.15GaAs0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure. We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Moreover, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.

  11. Terahertz Array Receivers with Integrated Antennas

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro; hide

    2011-01-01

    Highly sensitive terahertz heterodyne receivers have been mostly single-pixel. However, now there is a real need of multi-pixel array receivers at these frequencies driven by the science and instrument requirements. In this paper we explore various receiver font-end and antenna architectures for use in multi-pixel integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies has progressed very well over the past few years. Novel stacking of micro-machined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages has made it possible to design multi-pixel heterodyne arrays. One of the critical technologies to achieve fully integrated system is the antenna arrays compatible with the receiver array architecture. In this paper we explore different receiver and antenna architectures for multi-pixel heterodyne and direct detector arrays for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  12. The preparation method of terahertz monolithic integrated device

    NASA Astrophysics Data System (ADS)

    Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

    2018-01-01

    The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

  13. Development of terahertz endoscopic system for cancer detection

    NASA Astrophysics Data System (ADS)

    Doradla, Pallavi; Alavi, Karim; Joseph, Cecil S.; Giles, Robert H.

    2016-02-01

    Terahertz (THz) imaging is emerging as a robust platform for a myriad of applications in the fields of security, health, astronomy and material science. The terahertz regime with wavelengths spanning from microns to millimeters is a potentially safe and noninvasive medical imaging modality for detecting cancers. Endoscopic imaging systems provide high flexibility in examining the interior surfaces of an organ or tissue. Researchers have been working on the development of THz endoscopes with photoconductive antennas, which necessarily operate under high voltage, and require at least two channels to measure the reflected signal from the specimen. This manuscript provides the design and imperative steps involved in the development of a single-channel terahertz endoscopic system. The continuous-wave terahertz imaging system utilizes a single flexible terahertz waveguide channel to transmit and collect the back reflected intrinsic terahertz signal from the sample and is capable of operation in both transmission and reflection modalities. To determine the feasibility of using a terahertz endoscope for cancer detection, the co- and cross-polarized terahertz remittance from human colonic tissue specimens were collected at 584 GHz frequency. The two dimensional terahertz images obtained using polarization specific detection exhibited intrinsic contrast between cancerous and normal regions of fresh colorectal tissue. The level of contrast observed using endoscopic imaging correlates well with the contrast levels observed in the free space ex vivo terahertz reflectance studies of human colonic tissue. The prototype device developed in this study represents a significant step towards clinical endoscopic application of THz technology for in vivo colon cancer screening.

  14. GaAs MOEMS Technology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less

  15. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  16. Strain Imaging Using Terahertz Waves and Metamaterials

    DTIC Science & Technology

    2016-11-01

    TECHNICAL REPORT RDMR-WD-16-48 STRAIN IMAGING USING TERAHERTZ WAVES AND METAMATERIALS Henry O. Everitt and Martin S...TITLE AND SUBTITLE Strain Imaging Using Terahertz Waves and Metamaterials 5. FUNDING NUMBERS 6. AUTHOR(S) Henry O. Everitt, Martin S...predictions. 14. SUBJECT TERMS Birefringence, Terahertz Waves , Metamaterials 15. NUMBER OF PAGES 16 16. PRICE CODE 17. SECURITY

  17. Electro-optic measurement of terahertz pulse energy distribution.

    PubMed

    Sun, J H; Gallacher, J G; Brussaard, G J H; Lemos, N; Issac, R; Huang, Z X; Dias, J M; Jaroszynski, D A

    2009-11-01

    An accurate and direct measurement of the energy distribution of a low repetition rate terahertz electromagnetic pulse is challenging because of the lack of sensitive detectors in this spectral range. In this paper, we show how the total energy and energy density distribution of a terahertz electromagnetic pulse can be determined by directly measuring the absolute electric field amplitude and beam energy density distribution using electro-optic detection. This method has potential use as a routine method of measuring the energy density of terahertz pulses that could be applied to evaluating future high power terahertz sources, terahertz imaging, and spatially and temporarily resolved pump-probe experiments.

  18. Large dynamic range terahertz spectrometers based on plasmonic photomixers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wang, Ning; Javadi, Hamid; Jarrahi, Mona

    2017-02-01

    Heterodyne terahertz spectrometers are highly in demand for space explorations and astrophysics studies. A conventional heterodyne terahertz spectrometer consists of a terahertz mixer that mixes a received terahertz signal with a local oscillator signal to generate an intermediate frequency signal in the radio frequency (RF) range, where it can be easily processed and detected by RF electronics. Schottky diode mixers, superconductor-insulator-superconductor (SIS) mixers and hot electron bolometer (HEB) mixers are the most commonly used mixers in conventional heterodyne terahertz spectrometers. While conventional heterodyne terahertz spectrometers offer high spectral resolution and high detection sensitivity levels at cryogenic temperatures, their dynamic range and bandwidth are limited by the low radiation power of existing terahertz local oscillators and narrow bandwidth of existing terahertz mixers. To address these limitations, we present a novel approach for heterodyne terahertz spectrometry based on plasmonic photomixing. The presented design replaces terahertz mixer and local oscillator of conventional heterodyne terahertz spectrometers with a plasmonic photomixer pumped by an optical local oscillator. The optical local oscillator consists of two wavelength-tunable continuous-wave optical sources with a terahertz frequency difference. As a result, the spectrometry bandwidth and dynamic range of the presented heterodyne spectrometer is not limited by radiation frequency and power restrictions of conventional terahertz sources. We demonstrate a proof-of-concept terahertz spectrometer with more than 90 dB dynamic range and 1 THz spectrometry bandwidth.

  19. Design optimization of GaAs betavoltaic batteries

    NASA Astrophysics Data System (ADS)

    Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

    2011-06-01

    GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

  20. Optomechanical terahertz detection with single meta-atom resonator.

    PubMed

    Belacel, Cherif; Todorov, Yanko; Barbieri, Stefano; Gacemi, Djamal; Favero, Ivan; Sirtori, Carlo

    2017-11-17

    Most of the common technologies for detecting terahertz photons (>1 THz) at room temperature rely on slow thermal devices. The realization of fast and sensitive detectors in this frequency range is indeed a notoriously difficult task. Here we propose a novel device consisting of a subwavelength terahertz meta-atom resonator, which integrates a nanomechanical element and allows energy exchange between the mechanical motion and the electromagnetic degrees of freedom. An incident terahertz wave thus produces a nanomechanical signal that can be read out optically with high precision. We exploit this concept to demonstrate a terahertz detector that operates at room temperature with high sensitivity and a much higher frequency response compared to standard detectors. Beyond the technological issue of terahertz detection, our architecture opens up new perspectives for fundamental science of light-matter interaction at terahertz frequencies, combining optomechanical approaches with semiconductor quantum heterostructures.

  1. [A Terahertz Spectral Database Based on Browser/Server Technique].

    PubMed

    Zhang, Zhuo-yong; Song, Yue

    2015-09-01

    With the solution of key scientific and technical problems and development of instrumentation, the application of terahertz technology in various fields has been paid more and more attention. Owing to the unique characteristic advantages, terahertz technology has been showing a broad future in the fields of fast, non-damaging detections, as well as many other fields. Terahertz technology combined with other complementary methods can be used to cope with many difficult practical problems which could not be solved before. One of the critical points for further development of practical terahertz detection methods depends on a good and reliable terahertz spectral database. We developed a BS (browser/server) -based terahertz spectral database recently. We designed the main structure and main functions to fulfill practical requirements. The terahertz spectral database now includes more than 240 items, and the spectral information was collected based on three sources: (1) collection and citation from some other abroad terahertz spectral databases; (2) collected from published literatures; and (3) spectral data measured in our laboratory. The present paper introduced the basic structure and fundament functions of the terahertz spectral database developed in our laboratory. One of the key functions of this THz database is calculation of optical parameters. Some optical parameters including absorption coefficient, refractive index, etc. can be calculated based on the input THz time domain spectra. The other main functions and searching methods of the browser/server-based terahertz spectral database have been discussed. The database search system can provide users convenient functions including user registration, inquiry, displaying spectral figures and molecular structures, spectral matching, etc. The THz database system provides an on-line searching function for registered users. Registered users can compare the input THz spectrum with the spectra of database, according to

  2. Active terahertz wave imaging system for detecting hidden objects

    NASA Astrophysics Data System (ADS)

    Gan, Yuner; Liu, Ming; Zhao, Yuejin

    2016-11-01

    Terahertz wave can penetrate the common dielectric materials such as clothing, cardboard boxes, plastics and so on. Besides, the low photon energy and non-ionizing characteristic of the terahertz wave are especially suitable for the safety inspection of the human body. Terahertz imaging technology has a tremendous potential in the field of security inspection such as stations, airports and other public places. Terahertz wave imaging systems are divided into two categories: active terahertz imaging systems and passive terahertz imaging systems. So far, most terahertz imaging systems work at point to point mechanical scan pattern with the method of passive imaging. The imaging results of passive imaging tend to have low contrast and the image is not clear enough. This paper designs and implements an active terahertz wave imaging system combining terahertz wave transmitting and receiving with a Cassegrain antenna. The terahertz wave at the frequency of 94GHz is created by impact ionization avalanche transit time (IMPATT) diode, focused on the feed element for Cassegrain antenna by high density polyethylene (HDPE) lens, and transmitted to the human body by Cassegrain antenna. The reflected terahertz wave goes the same way it was emitted back to the feed element for Cassegrain antenna, focused on the horn antenna of detector by another high density polyethylene lens. The scanning method is the use of two-dimensional planar mirror, one responsible for horizontal scanning, and another responsible for vertical scanning. Our system can achieve a clear human body image, has better sensitivity and resolution than passive imaging system, and costs much lower than other active imaging system in the meantime.

  3. GaAs Monolithic Microwave Subsystem Technology Base

    DTIC Science & Technology

    1980-01-01

    To provide a captive source of reliable, high-quality GaAs substrates, a new crystal growth and substrate preparation facility which utilizes a high...Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. 24, 6. 20. Wood, Woodcock and Harris (1978) GaAs and Related Compounds, Inst. Phys. Conf

  4. First-principles study of a MXene terahertz detector.

    PubMed

    Jhon, Y I; Seo, M; Jhon, Y M

    2017-12-21

    2D transition metal carbides, nitrides, and carbonitrides called MXenes have attracted increasing attention due to their outstanding properties in many fields. By performing systematic density functional theory calculations, here we show that MXenes can serve as excellent terahertz detecting materials. Giant optical absorption and extinction coefficients are observed in the terahertz range in the most popular MXene, namely, Ti 3 C 2 , which is regardless of the stacking degree. Various other optical properties have been investigated as well in the terahertz range for in-depth understanding of its optical response. We find that the thermoelectric figure of merit (ZT) of stacked Ti 3 C 2 flakes is comparable to that of carbon nanotube films. Based on excellent terahertz absorption and decent thermoelectric efficiency in MXenes, we finally suggest the promise of MXenes in terahertz detection applications, which includes terahertz bolometers and photothermoelectric detectors. Possible ZT improvements are discussed in large-scale MXene flake films and/or MXene-polymer composite films.

  5. Terahertz pulse generation from metal nanoparticle ink

    NASA Astrophysics Data System (ADS)

    Kato, Kosaku; Takano, Keisuke; Tadokoro, Yuzuru; Phan, Thanh Nhat Khoa; Nakajima, Makoto

    2016-11-01

    Terahertz pulse generation from metallic nanostructures irradiated by femtosecond laser pulses is of interest because the conversion efficiency from laser pulses to terahertz waves is increased by the local field enhancement resulting from the plasmon oscillation. In this talk we present our recent study on terahertz generation from metal nanoparticle ink. We baked a silver nanoparticle ink spin-coated onto a glass coverslip in various temperatures. On the surface of the baked ink, bumpy nanostructures are spontaneously formed, and the average size of bumps depends on the baking temperature. These structures are expected to lead to local field enhancement and then large nonlinear polarizations on the surface. The baked ink was irradiated by the output of regeneratively amplified Ti:sapphire femtosecond laser at an incidence angle of 45°. Waveforms of generated terahertz pulses are detected by electro-optical sampling. The generation efficiency was high when the average diameter of bumps was around 100 nm, which is realized when the ink is baked in 205 to 235°C in our setup. One of our next research targets is terahertz wave generation from micro-patterned metallic nanoparticle ink. It is an advantage of the metal nanoparticle ink that by using inkjet printers one can fabricate various patterns with micrometer scales, in which terahertz waves have a resonance. Combination of microstructures made by a printer and nanostructure spontaneously formed in the baking process will provide us terahertz emitters with unique frequency characteristics.

  6. Research on terahertz properties of rat brain tissue sections during dehydration

    NASA Astrophysics Data System (ADS)

    Cui, Gangqiang; Liang, Jianfeng; Zhao, Hongwei; Zhao, Xianghui; Chang, Chao

    2018-01-01

    Biological tissue sections are always kept in a system purged with dry nitrogen for the measurement of terahertz spectrum. However, the injected nitrogen will cause dehydration of tissue sections, which will affect the accuracy of spectrum measurement. In this paper, terahertz time-domain spectrometer is used to measure the terahertz spectra of rat brain tissue sections during dehydration. The changes of terahertz properties, including terahertz transmittance, refractive index and extinction coefficient during dehydration are also analyzed. The amplitudes of terahertz time-domain spectra increase gradually during the dehydration process. Besides, the terahertz properties show obvious changes during the dehydration process. All the results indicate that the injected dry nitrogen has a significant effect on the terahertz spectra and properties of tissue sections. This study contributes to further research and application of terahertz technology in biomedical field.

  7. Terahertz Spectroscopy for Chemical Detection and Burn Characterization

    NASA Astrophysics Data System (ADS)

    Arbab, Mohammad Hassan

    Terahertz (THz) frequencies represent the last frontier of the electromagnetic spectrum to be investigated by scientists. One of the main attractions of investigating this frequency range is the richness of the spectral information that can be obtained using a Terahertz Time-Domain Spectroscopy (THz-TDS) setup. Many large molecule chemicals and polymers have vibrational and rotational modes in the THz frequencies. Study of these resonance modes has revealed a wealth of new information about the intermolecular structure, and its transformation during crystallization or polymerization process. This information helps researchers develop new materials to address problems such as efficient energy conversion in polymer solar cells. Moreover, similar signature-like terahertz modes can be used for stand-off identification of substances or for nondestructive evaluation of defects in industrial applications. Finally, terahertz spectroscopy has the potential to provide a safe and non-ionizing imaging modality to study cellular and molecular events in biological and biomedical applications. The high sensitivity of terahertz waves to attenuation by both bound and free water molecules can also provides a source of signal contrast for many future biomedical imaging and diagnostic applications. In this dissertation, we aim to study and develop three such applications of terahertz spectroscopy, which form the three axes of our work: rough-surface scattering mediated stand-off detection of chemicals, characterization of burn injuries using terahertz radiation, and a new electrically tunable bandpass filter device incorporating nano-material transparent electrodes that can enable fast terahertz spectroscopy in the frequency domain.

  8. Subwavelength micropillar array terahertz lasers.

    PubMed

    Krall, Michael; Brandstetter, Martin; Deutsch, Christoph; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

    2014-01-13

    We report on micropillar-based terahertz lasers with active pillars that are much smaller than the emission wavelength. These micropillar array lasers correspond to scaled-down band-edge photonic crystal lasers forming an active photonic metamaterial. In contrast to photonic crystal lasers which use significantly larger pillar structures, lasing emission is not observed close to high-symmetry points in the photonic band diagram, but in the effective medium regime. We measure stimulated emission at 4 THz for micropillar array lasers with pillar diameters of 5 µm. Our results not only demonstrate the integration of active subwavelength optics in a terahertz laser, but are also an important step towards the realization of nanowire-based terahertz lasers.

  9. Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

    NASA Astrophysics Data System (ADS)

    Qinwen, XUE; Xiaohua, WANG; Chenglin, LIU; Youwen, LIU

    2018-03-01

    The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2) N /GaAs/(SiO2/Si) N /air is far higher than in asymmetric structure of air/(Si/SiO2) N /GaAs/(Si/SiO2) N /air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

  10. A terahertz-vibration to terahertz-radiation converter based on gold nanoobjects: a feasibility study.

    PubMed

    Moldosanov, Kamil; Postnikov, Andrei

    2016-01-01

    The need for practical and adaptable terahertz sources is apparent in the areas of application such as early cancer diagnostics, nondestructive inspection of pharmaceutical tablets, visualization of concealed objects. We outline the operation principle and suggest the design of a simple appliance for generating terahertz radiation by a system of nanoobjects - gold nanobars (GNBs) or nanorings (GNRs) - irradiated by microwaves. Our estimations confirm a feasibility of the idea that GNBs and GNRs irradiated by microwaves could become terahertz emitters with photon energies within the full width at half maximum of the longitudinal acoustic phononic DOS of gold (ca. 16-19 meV, i.e., 3.9-4.6 THz). A scheme of the terahertz radiation source is suggested based on the domestic microwave oven irradiating a substrate with multiple deposited GNBs or GNRs. The size of a nanoobject for optimal conversion is estimated to be approx. 3 nm (thickness) by approx. 100 nm (length of GNB, or along the GNR). This detailed prediction is open to experimental verification. An impact is expected onto further studies of interplay between atomic vibrations and electromagnetic waves in nanoobjects.

  11. Frequency Up-Conversion Photon-Type Terahertz Imager.

    PubMed

    Fu, Z L; Gu, L L; Guo, X G; Tan, Z Y; Wan, W J; Zhou, T; Shao, D X; Zhang, R; Cao, J C

    2016-05-05

    Terahertz imaging has many important potential applications. Due to the failure of Si readout integrated circuits (ROICs) and the thermal mismatch between the photo-detector arrays and the ROICs at temperatures below 40 K, there are big technical challenges to construct terahertz photo-type focal plane arrays. In this work, we report pixel-less photo-type terahertz imagers based on the frequency up-conversion technique. The devices are composed of terahertz quantum-well photo-detectors (QWPs) and near-infrared (NIR) light emitting diodes (LEDs) which are grown in sequence on the same substrates using molecular beam epitaxy. In such an integrated QWP-LED device, photocurrent in the QWP drives the LED to emit NIR light. By optimizing the structural parameters of the QWP-LED, the QWP part and the LED part both work well. The maximum values of the internal and external energy up-conversion efficiencies are around 20% and 0.5%. A laser spot of a homemade terahertz quantum cascade laser is imaged by the QWP-LED together with a commercial Si camera. The pixel-less imaging results show that the image blurring induced by the transverse spreading of photocurrent is negligible. The demonstrated pixel-less imaging opens a new way to realize high performance terahertz imaging devices.

  12. Frequency Up-Conversion Photon-Type Terahertz Imager

    PubMed Central

    Fu, Z. L.; Gu, L. L.; Guo, X. G.; Tan, Z. Y.; Wan, W. J.; Zhou, T.; Shao, D. X.; Zhang, R.; Cao, J. C.

    2016-01-01

    Terahertz imaging has many important potential applications. Due to the failure of Si readout integrated circuits (ROICs) and the thermal mismatch between the photo-detector arrays and the ROICs at temperatures below 40 K, there are big technical challenges to construct terahertz photo-type focal plane arrays. In this work, we report pixel-less photo-type terahertz imagers based on the frequency up-conversion technique. The devices are composed of terahertz quantum-well photo-detectors (QWPs) and near-infrared (NIR) light emitting diodes (LEDs) which are grown in sequence on the same substrates using molecular beam epitaxy. In such an integrated QWP-LED device, photocurrent in the QWP drives the LED to emit NIR light. By optimizing the structural parameters of the QWP-LED, the QWP part and the LED part both work well. The maximum values of the internal and external energy up-conversion efficiencies are around 20% and 0.5%. A laser spot of a homemade terahertz quantum cascade laser is imaged by the QWP-LED together with a commercial Si camera. The pixel-less imaging results show that the image blurring induced by the transverse spreading of photocurrent is negligible. The demonstrated pixel-less imaging opens a new way to realize high performance terahertz imaging devices. PMID:27147281

  13. A Concealed Barcode Identification System Using Terahertz Time-domain Spectroscopy

    NASA Astrophysics Data System (ADS)

    Guan, Yu; Yamamoto, Manabu; Kitazawa, Toshiyuki; Tripathi, Saroj R.; Takeya, Kei; Kawase, Kodo

    2015-03-01

    We present a concealed terahertz barcode/chipless tag to achieve remote identification through an obstructing material using terahertz radiation. We show scanned terahertz reflection spectral images of barcodes concealed by a thick obstacle. A concealed and double- side printed terahertz barcode structure is proposed, and we demonstrate that our design has better performance in definition than a single-side printed barcode using terahertz time-domain spectroscopy. This technique combines the benefits of a chipless tag to read encoded information covered by an optically opaque material with low cost and a simple fabrication process. Simulations are also described, along with an explanation of the principle of the terahertz barcode identification system.

  14. New Passivation Methods of GaAs.

    DTIC Science & Technology

    1980-01-01

    Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

  15. Terahertz Absorption and Circular Dichroism Spectroscopy of Solvated Biopolymers

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Plaxco, Kevin; Allen, S. James

    2006-03-01

    Biopolymers are expected to exhibit broad spectral features in the terahertz frequency range, corresponding to their functionally relevant, global and sub-global collective vibrational modes with ˜ picosecond timescale. Recent advances in terahertz technology have stimulated researchers to employ terahertz absorption spectroscopy to directly probe these postulated collective modes. However, these pioneering studies have been limited to dry and, at best, moist samples. Successful isolation of low frequency vibrational activities of solvated biopolymers in their natural water environment has remained elusive, due to the overwhelming attenuation of the terahertz radiation by water. Here we have developed a terahertz absorption and circular dichroism spectrometer suitable for studying biopolymers in biologically relevant water solutions. We have precisely isolated, for the first time, the terahertz absorption of solvated prototypical proteins, Bovine Serum Albumin and Lysozyme, and made important direct comparison to the existing molecular dynamic simulations and normal mode calculations. We have also successfully demonstrated the magnetic circular dichroism in semiconductors, and placed upper bounds on the terahertz circular dichroism signatures of prototypical proteins in water solution.

  16. Ultrabright continuously tunable terahertz-wave generation at room temperature

    PubMed Central

    Hayashi, Shin'ichiro; Nawata, Kouji; Taira, Takunori; Shikata, Jun-ichi; Kawase, Kodo; Minamide, Hiroaki

    2014-01-01

    The hottest frequency region in terms of research currently lies in the ‘frequency gap' region between microwaves and infrared: terahertz waves. Although new methods for generating terahertz radiation have been developed, most sources cannot generate high-brightness terahertz beams. Here we demonstrate the generation of ultrabright terahertz waves (brightness ~0.2 GW/sr·cm2, brightness temperature of ~1018 K, peak power of >50 kW) using parametric wavelength conversion in a nonlinear crystal; this is brighter than many specialized sources such as far-infrared free-electron lasers (~1016 K, ~2 kW). We revealed novel parametric wavelength conversion using stimulated Raman scattering in LiNbO3 without stimulated Brillouin scattering using recently-developed microchip laser. Furthermore, nonlinear up-conversion techniques allow the intense terahertz waves to be visualized and their frequency determined. These results are very promising for extending applied research into the terahertz region, and we expect that this source will open up new research fields such as nonlinear optics in the terahertz region. PMID:24898269

  17. Ultrabright continuously tunable terahertz-wave generation at room temperature.

    PubMed

    Hayashi, Shin'ichiro; Nawata, Kouji; Taira, Takunori; Shikata, Jun-ichi; Kawase, Kodo; Minamide, Hiroaki

    2014-06-05

    The hottest frequency region in terms of research currently lies in the 'frequency gap' region between microwaves and infrared: terahertz waves. Although new methods for generating terahertz radiation have been developed, most sources cannot generate high-brightness terahertz beams. Here we demonstrate the generation of ultrabright terahertz waves (brightness ~0.2 GW/sr·cm(2), brightness temperature of ~10(18) K, peak power of >50 kW) using parametric wavelength conversion in a nonlinear crystal; this is brighter than many specialized sources such as far-infrared free-electron lasers (~10(16) K, ~2 kW). We revealed novel parametric wavelength conversion using stimulated Raman scattering in LiNbO3 without stimulated Brillouin scattering using recently-developed microchip laser. Furthermore, nonlinear up-conversion techniques allow the intense terahertz waves to be visualized and their frequency determined. These results are very promising for extending applied research into the terahertz region, and we expect that this source will open up new research fields such as nonlinear optics in the terahertz region.

  18. Compact four-channel terahertz demultiplexer based on directional coupling photonic crystal

    NASA Astrophysics Data System (ADS)

    Jiu-Sheng, Li; Han, Liu; Le, Zhang

    2015-09-01

    Electromagnetic polarization conveys valuable information for signal processing. Manipulation of terahertz wavelength demultiplexer exhibits tremendous potential in developing application of terahertz science and technology. We propose an approach to separate efficiently four frequencies terahertz waves based on three cascaded directional coupling two-dimensional photonic crystal waveguides. Both plane wave expansion method and finite-difference time-domain method are used to calculate and analyze the characteristics of the proposed device. The simulation results show that the designed terahertz wavelength demultiplexer can split four different wavelengths of terahertz wave into different propagation directions with high transmittance and low crosstalk. The present device is very compact and the total size is 6.8×10.6 mm2. This enables the terahertz wavelength demultiplexer to be used in terahertz wave system and terahertz wave integrated circuit fields.

  19. Nonlinear Optical Response of Polar Semiconductors in the Terahertz Range

    NASA Astrophysics Data System (ADS)

    Roman, Eric; Yates, Jonathan; Veithen, Marek; Vanderbilt, David; Souza, Ivo

    2006-03-01

    Using the Berry-phase finite-field method, we compute from first-principles the recently measured infrared (IR) dispersion of the nonlinear susceptibility (2)circ in III-V zincblende semiconductors. At far-IR (terahertz) frequencies, in addition to the purely electronic response (2)circ∞, the total (2)circ depends on three other parameters, C1, C2, and C3, describing the contributions from ionic motion. They relate to the TO Raman polarizability and the second-order displacement-induced dielectric polarization and forces, respectively. Contrary to a widely-accepted model, but in agreement with the recent experiments on GaAs, ^1 we find that the contribution from mechanical anharmonicity dominates over electrical anharmonicity. By using Richardson extrapolation to evaluate the Berry's phase in k-space by finite differences, we are able to improve the convergence of the nonlinear susceptibility from the usual O[(δk)^2] to O[(δk)^4], dramatically reducing the computational cost. T. Dekorsy, V. A. Yakovlev, W. Seidel, M. Helm, and F. Keilmann, Phys. Rev. Lett. 90, 055508 (2003). C. Flytzanis, Phys. Rev. B 6, 1264 (1972). R. Umari and A. Pasquarello, Phys. Rev. B 68, 085114 (2003).

  20. Two-well terahertz quantum cascade lasers with suppressed carrier leakage

    DOE PAGES

    Albo, Asaf; Flores, Yuri V.; Hu, Qing; ...

    2017-09-11

    The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

  1. Two-well terahertz quantum cascade lasers with suppressed carrier leakage

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Albo, Asaf; Flores, Yuri V.; Hu, Qing

    The mechanisms that limit the temperature performance of diagonal GaAs/Al 0.15GaAs 0.85-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated leakage of charge carriers through excited states into the continuum. THz-QCLs with energetically higher-laying excited states supported by sufficiently high barriers aim to eliminate these leakage mechanisms and lead to improved temperature performance. Although suppression of thermally activated carrier leakage was realized in a three-well THz-QCL based on a resonant-phonon scheme, no improvement in the temperature performance was reported thus far. Here, we report a major improvement in the temperature performance of a two-quantum-well direct-phonon THz-QCL structure.more » We show that the improved laser performance is due to the suppression of the thermally activated carrier leakage into the continuum with the increase in the injection barrier height. Furthermore, we demonstrate that high-barrier two-well structures can support a clean three-level laser system at elevated temperatures, which opens the opportunity to achieve temperature performance beyond the state-of-the-art.« less

  2. Real-time terahertz near-field microscope.

    PubMed

    Blanchard, F; Doi, A; Tanaka, T; Hirori, H; Tanaka, H; Kadoya, Y; Tanaka, K

    2011-04-25

    We report a terahertz near-field microscope with a high dynamic range that can capture images of a 370 x 740 μm2 area at 35 frames per second. We achieve high spatial resolution (14 μm corresponding to λ/30 for a center frequency at 0.7 THz) on a large area by combining two novel techniques: terahertz generation by tilted-pulse-front excitation and electro-optic balanced imaging detection using a thin crystal. To demonstrate the microscope capability, we reveal the field enhancement at the gap position of a dipole antenna after the irradiation of a terahertz pulse.

  3. Development of a wavefront sensor for terahertz pulses.

    PubMed

    Abraham, Emmanuel; Cahyadi, Harsono; Brossard, Mathilde; Degert, Jérôme; Freysz, Eric; Yasui, Takeshi

    2016-03-07

    Wavefront characterization of terahertz pulses is essential to optimize far-field intensity distribution of time-domain (imaging) spectrometers or increase the peak power of intense terahertz sources. In this paper, we report on the wavefront measurement of terahertz pulses using a Hartmann sensor associated with a 2D electro-optic imaging system composed of a ZnTe crystal and a CMOS camera. We quantitatively determined the deformations of planar and converging spherical wavefronts using the modal Zernike reconstruction least-squares method. Associated with deformable mirrors, the sensor will also open the route to terahertz adaptive optics.

  4. Biomedical terahertz imaging with a quantum cascade laser

    NASA Astrophysics Data System (ADS)

    Kim, Seongsin M.; Hatami, Fariba; Harris, James S.; Kurian, Allison W.; Ford, James; King, Douglas; Scalari, Giacomo; Giovannini, Marcella; Hoyler, Nicolas; Faist, Jerome; Harris, Geoff

    2006-04-01

    We present biomedical imaging using a single frequency terahertz imaging system based on a low threshold quantum cascade laser emitting at 3.7THz (λ=81μm). With a peak output power of 4mW, coherent terahertz radiation and detection provide a relatively large dynamic range and high spatial resolution. We study image contrast based on water/fat content ratios in different tissues. Terahertz transmission imaging demonstrates a distinct anatomy in a rat brain slice. We also demonstrate malignant tissue contrast in an image of a mouse liver with developed tumors, indicating potential use of terahertz imaging for probing cancerous tissues.

  5. Terahertz radar cross section measurements.

    PubMed

    Iwaszczuk, Krzysztof; Heiselberg, Henning; Jepsen, Peter Uhd

    2010-12-06

    We perform angle- and frequency-resolved radar cross section (RCS) measurements on objects at terahertz frequencies. Our RCS measurements are performed on a scale model aircraft of size 5-10 cm in polar and azimuthal configurations, and correspond closely to RCS measurements with conventional radar on full-size objects. The measurements are performed in a terahertz time-domain system with freely propagating terahertz pulses generated by tilted pulse front excitation of lithium niobate crystals and measured with sub-picosecond time resolution. The application of a time domain system provides ranging information and also allows for identification of scattering points such as weaponry attached to the aircraft. The shapes of the models and positions of reflecting parts are retrieved by the filtered back projection algorithm.

  6. Graphene based terahertz phase modulators

    NASA Astrophysics Data System (ADS)

    Kakenov, N.; Ergoktas, M. S.; Balci, O.; Kocabas, C.

    2018-07-01

    Electrical control of amplitude and phase of terahertz radiation (THz) is the key technological challenge for high resolution and noninvasive THz imaging. The lack of active materials and devices hinders the realization of these imaging systems. Here, we demonstrate an efficient terahertz phase and amplitude modulation using electrically tunable graphene devices. Our device structure consists of electrolyte-gated graphene placed at quarter wavelength distance from a reflecting metallic surface. In this geometry, graphene operates as a tunable impedance surface which yields electrically controlled reflection phase. Terahertz time domain reflection spectroscopy reveals the voltage controlled phase modulation of π and the reflection modulation of 50 dB. To show the promises of our approach, we demonstrate a multipixel phase modulator array which operates as a gradient impedance surface.

  7. Active graphene-silicon hybrid diode for terahertz waves.

    PubMed

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  8. Continuous-wave terahertz imaging of nonmelanoma skin cancers

    NASA Astrophysics Data System (ADS)

    Joseph, Cecil Sudhir

    Continuous wave terahertz imaging has the potential to offer a safe, non-invasive medical imaging modality for detecting different types of human skin cancers. Terahertz pulse imaging (TPI) has already shown that there is contrast between basal cell carcinoma and normal skin. Continuous-wave imaging offers a simpler, lower cost alternative to terahertz pulse imaging. This project aims to isolate the optimal contrast frequency for a continuous wave terahertz imaging system and demonstrate transmission based, in-vitro , imaging of thin sections of non-melanoma skin cancers and correlate the images to sample histology. The aim of this project is to conduct a proof-of-principle experiment that establishes whether continuous-wave terahertz imaging can detect differences between cancerous and normal tissue while outlining the basic requirements for building a system capable of performing in vivo tests.

  9. Active graphene–silicon hybrid diode for terahertz waves

    PubMed Central

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  10. A promising diagnostic method: Terahertz pulsed imaging and spectroscopy

    PubMed Central

    Sun, Yiwen; Sy, Ming Yiu; Wang, Yi-Xiang J; Ahuja, Anil T; Zhang, Yuan-Ting; Pickwell-MacPherson, Emma

    2011-01-01

    The terahertz band lies between the microwave and infrared regions of the electromagnetic spectrum. This radiation has very low photon energy and thus it does not pose any ionization hazard for biological tissues. It is strongly attenuated by water and very sensitive to water content. Unique absorption spectra due to intermolecular vibrations in this region have been found in different biological materials. These unique features make terahertz imaging very attractive for medical applications in order to provide complimentary information to existing imaging techniques. There has been an increasing interest in terahertz imaging and spectroscopy of biologically related applications within the last few years and more and more terahertz spectra are being reported. This paper introduces terahertz technology and provides a short review of recent advances in terahertz imaging and spectroscopy techniques, and a number of applications such as molecular spectroscopy, tissue characterization and skin imaging are discussed. PMID:21512652

  11. Photonics and terahertz tchnologies: part 1

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2011-10-01

    This digest paper debates basic features of the terahertz band of frequencies. There are presented fundamental characteristics of the basic terahertz system consisting of a THz source, propagation media, transmission lines, THz signal processing, and detectors. Such a system finds research application, but also practical in two main areas: terahertz imaging - transmissive and reflective, and as a close range THz radar, but also as sensory systems mainly for molecular sensing. There were launched in this country a few THz research projects concerning the THz sources, detectors and their applications. Among these projects there is an infrastructural one called FOTEH, opened at the WUT. The details of this project are debated and the consequences of its realization in this country. The first part of the paper is an introduction debating THz band and comparing it with the photonics one. The second part presents the assumptions of the infrastructural FOTEH project on Photonics and Terahertz Technologies.

  12. Recent developments in terahertz sensing technology

    NASA Astrophysics Data System (ADS)

    Shur, Michael

    2016-05-01

    Terahertz technology has found numerous applications for the detection of biological and chemical hazardous agents, medical diagnostics, detection of explosives, providing security in buildings, airports, and other public spaces, shortrange covert communications (in the THz and sub-THz windows), and applications in radio astronomy and space research. The expansion of these applications will depend on the development of efficient electronic terahertz sources and sensitive low-noise terahertz detectors. Schottky diode frequency multipliers have emerged as a viable THz source technology reaching a few THz. High speed three terminal electronic devices (FETs and HBTs) have entered the THz range (with cutoff frequencies and maximum frequencies of operation above 1 THz). A new approach called plasma wave electronics recently demonstrated an efficient terahertz detection in GaAs-based and GaN-based HEMTs and in Si MOS, SOI, FINFETs and in FET arrays. This progress in THz electronic technology has promise for a significant expansion of THz applications.

  13. All-dielectric metalens for terahertz wave imaging.

    PubMed

    Jiang, Xue; Chen, Hao; Li, Zeyu; Yuan, Hongkuan; Cao, Luyao; Luo, Zhenfei; Zhang, Kun; Zhang, Zhihai; Wen, Zhongquan; Zhu, Li-Guo; Zhou, Xun; Liang, Gaofeng; Ruan, Desheng; Du, Lianghui; Wang, Lingfang; Chen, Gang

    2018-05-28

    Terahertz wave imaging offers promising properties for non-destructive testing applications in the areas of homeland security, medicine, and industrial inspection. However, conventional optical lenses are heavy and bulky and difficult to integrate. An all-dielectric metasurface provides an attractive way to realize a planar lens of light weight that is ultrathin and offers ease of integration. Terahertz lenses based on various metasurfaces have been studied, especially for the application of wave focusing, while there are few experimental demonstrations of terahertz wave imaging lenses based on an all-dielectric metasurface. In the present work, we propose a metalens based on an all-dielectric metasurface with a sub-wavelength unit size of 0.39λ for terahertz wave imaging and experimentally demonstrate its performance in focusing and imaging. A large numerical aperture metalens was fabricated with a focal length of 300λ, radius of 300λ, and numerical aperture of 0.707. The experimental results show that the lens can focus THz waves with an incident angle up to 48°. More importantly, clear terahertz wave images of different objects were obtained for both different cases of forward- and inverse-incident directions, which demonstrate the reversibility of the metalens for imaging. Such a metalens provides a way for realization of all-planar-lens THz imaging system, and might find application in terahertz wave imaging, information processing, microscopy, and others.

  14. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Klochkov, A. N.

    The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of themore » laser ridge stripe with an n{sup +}-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.« less

  15. Numeric analysis of terahertz wave propagation in familiar packaging materials

    NASA Astrophysics Data System (ADS)

    Zhang, Lihong; Yang, Guang

    2015-10-01

    To assess the potential application of terahertz waves in security examination, the transmission characteristics of terahertz waves in packaging materials should be studied. This paper simulates the propagation of terahertz waves in cloth and paper, studies the changes of shape and position of crest of terahertz waves before and after these materials, and gets the law of these changes, which has potential applications in thickness measurement for the thin insulated materials; gives reflected and transmitted wave of terahertz waves, and computes reflected and transmitted coefficient, indicates the good transmission properties of these materials for terahertz waves, which provides the theoretical basis for the realization of contactless security examination of packaged post, package and people pass the important passageway (such as airport and station).

  16. Phosphine Functionalization GaAs(111)A Surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Traub, M.; Biteen, J; Michalak, D

    Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Gamore » surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.« less

  17. Nitridation of porous GaAs by an ECR ammonia plasma

    NASA Astrophysics Data System (ADS)

    Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

    2006-02-01

    The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

  18. WGM Resonators for Terahertz-to-Optical Frequency Conversion

    NASA Technical Reports Server (NTRS)

    Strekalov,Dmitry; Savchenkov, Anatoliy; Matsko, Andrey; Nu, Nan

    2008-01-01

    Progress has been made toward solving some practical problems in the implementation of terahertz-to-optical frequency converters utilizing whispering-gallery-mode (WGM) resonators. Such frequency converters are expected to be essential parts of non-cryogenic terahertz- radiation receivers that are, variously, under development or contemplated for a variety of applications in airborne and spaceborne instrumentation for astronomical and military uses. In most respects, the basic principles of terahertz-to-optical frequency conversion in WGM resonators are the same as those of microwave (sub-terahertz)-to-optical frequency conversion in WGM resonators, various aspects of which were discussed in the three preceeding articles. To recapitulate: In a receiver following this approach, a preamplified incoming microwave signal (in the present case, a terahertz signal) is up-converted to an optical signal by a technique that exploits the nonlinearity of the electromagnetic response of a whispering-gallery-mode (WGM) resonator made of LiNbO3 or another suitable electro-optical material. Upconversion takes place by three-wave mixing in the resonator. To ensure the required interaction among the optical and terahertz signals, the WGM resonator must be designed and fabricated to function as an electro-optical modulator while simultaneously exhibiting (1) resonance at the required microwave and optical operating frequencies and (2) phase matching among the microwave and optical signals circulating in the resonator. Downstream of the WGM resonator, the up-converted signal is processed photonically by use of a tunable optical filter or local oscillator and is then detected. The practical problems addressed in the present development effort are the following: Satisfaction of the optical and terahertz resonance-frequency requirement is a straightforward matter, inasmuch as the optical and terahertz spectra can be measured. However, satisfaction of the phase-matching requirement is

  19. Terahertz Science, Technology, and Communication

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam

    2013-01-01

    The term "terahertz" has been ubiquitous in the arena of technology over the past couple of years. New applications are emerging every day which are exploiting the promises of terahertz - its small wavelength; capability of penetrating dust, clouds, and fog; and possibility of having large instantaneous bandwidth for high-speed communication channels. Until very recently, space-based instruments for astrophysics, planetary science, and Earth science missions have been the primary motivator for the development of terahertz sensors, sources, and systems. However, in recent years the emerging areas such as imaging from space platforms, surveillance of person-borne hidden weapons or contraband from a safe stand-off distance and reconnaissance, medical imaging and DNA sequencing, and in the world high speed communications have been the driving force for this area of research.

  20. Scanning Terahertz Heterodyne Imaging Systems

    NASA Technical Reports Server (NTRS)

    Siegel, Peter; Dengler, Robert

    2007-01-01

    Scanning terahertz heterodyne imaging systems are now at an early stage of development. In a basic scanning terahertz heterodyne imaging system, (see Figure 1) two far-infrared lasers generate beams denoted the local-oscillator (LO) and signal that differ in frequency by an amount, denoted the intermediate frequency (IF), chosen to suit the application. The LO beam is sent directly to a mixer as one of two inputs. The signal beam is focused to a spot on or in the specimen. After transmission through or reflection from the specimen, the beams are focused to a spot on a terahertz mixer, which extracts the IF outputs. The specimen is mounted on a translation stage, by means of which the focal spot is scanned across the specimen to build up an image.

  1. High-resolution broadband terahertz spectroscopy via electronic heterodyne detection of photonically generated terahertz frequency comb.

    PubMed

    Pavelyev, D G; Skryl, A S; Bakunov, M I

    2014-10-01

    We report an alternative approach to the terahertz frequency-comb spectroscopy (TFCS) based on nonlinear mixing of a photonically generated terahertz pulse train with a continuous wave signal from an electronic synthesizer. A superlattice is used as a nonlinear mixer. Unlike the standard TFCS technique, this approach does not require a complex double-laser system but retains the advantages of TFCS-high spectral resolution and wide bandwidth.

  2. Component spectra extraction from terahertz measurements of unknown mixtures.

    PubMed

    Li, Xian; Hou, D B; Huang, P J; Cai, J H; Zhang, G X

    2015-10-20

    The aim of this work is to extract component spectra from unknown mixtures in the terahertz region. To that end, a method, hard modeling factor analysis (HMFA), was applied to resolve terahertz spectral matrices collected from the unknown mixtures. This method does not require any expertise of the user and allows the consideration of nonlinear effects such as peak variations or peak shifts. It describes the spectra using a peak-based nonlinear mathematic model and builds the component spectra automatically by recombination of the resolved peaks through correlation analysis. Meanwhile, modifications on the method were made to take the features of terahertz spectra into account and to deal with the artificial baseline problem that troubles the extraction process of some terahertz spectra. In order to validate the proposed method, simulated wideband terahertz spectra of binary and ternary systems and experimental terahertz absorption spectra of amino acids mixtures were tested. In each test, not only the number of pure components could be correctly predicted but also the identified pure spectra had a good similarity with the true spectra. Moreover, the proposed method associated the molecular motions with the component extraction, making the identification process more physically meaningful and interpretable compared to other methods. The results indicate that the HMFA method with the modifications can be a practical tool for identifying component terahertz spectra in completely unknown mixtures. This work reports the solution to this kind of problem in the terahertz region for the first time, to the best of the authors' knowledge, and represents a significant advance toward exploring physical or chemical mechanisms of unknown complex systems by terahertz spectroscopy.

  3. Plasmonic waveguide with folded stubs for highly confined terahertz propagation and concentration.

    PubMed

    Ye, Longfang; Xiao, Yifan; Liu, Na; Song, Zhengyong; Zhang, Wei; Liu, Qing Huo

    2017-01-23

    We proposed a novel planar terahertz (THz) plasmonic waveguide with folded stub arrays to achieve excellent terahertz propagation performance with tight field confinement and compact size based on the concept of spoof surface plasmon polaritons (spoof SPPs). It is found that the waveguide propagation characteristics can be directly manipulated by increasing the length of the folded stubs without increasing its lateral dimension, which exhibits much lower asymptotic frequency of the dispersion relation and even tighter terahertz field confinement than conventional plasmonic waveguides with rectangular stub arrays. Based on this waveguiding scheme, a terahertz concentrator with gradual step-length folded stubs is proposed to achieve high terahertz field enhancement, and an enhancement factor greater than 20 is demonstrated. This work offers a new perspective on very confined terahertz propagation and concentration, which may have promising potential applications in various integrated terahertz plasmonic circuits and devices, terahertz sensing and terahertz nonlinear optics.

  4. Terahertz Tools Advance Imaging for Security, Industry

    NASA Technical Reports Server (NTRS)

    2010-01-01

    Picometrix, a wholly owned subsidiary of Advanced Photonix Inc. (API), of Ann Arbor, Michigan, invented the world s first commercial terahertz system. The company improved the portability and capabilities of their systems through Small Business Innovation Research (SBIR) agreements with Langley Research Center to provide terahertz imaging capabilities for inspecting the space shuttle external tanks and orbiters. Now API s systems make use of the unique imaging capacity of terahertz radiation on manufacturing floors, for thickness measurements of coatings, pharmaceutical tablet production, and even art conservation.

  5. GaAs VLSI technology and circuit elements for DSP

    NASA Astrophysics Data System (ADS)

    Mikkelson, James M.

    1990-10-01

    Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability

  6. Terahertz wave manipulation based on multi-bit coding artificial electromagnetic surfaces

    NASA Astrophysics Data System (ADS)

    Li, Jiu-Sheng; Zhao, Ze-Jiang; Yao, Jian-Quan

    2018-05-01

    A polarization insensitive multi-bit coding artificial electromagnetic surface is proposed for terahertz wave manipulation. The coding artificial electromagnetic surfaces composed of four-arrow-shaped particles with certain coding sequences can generate multi-bit coding in the terahertz frequencies and manipulate the reflected terahertz waves to the numerous directions by using of different coding distributions. Furthermore, we demonstrate that our coding artificial electromagnetic surfaces have strong abilities to reduce the radar cross section with polarization insensitive for TE and TM incident terahertz waves as well as linear-polarized and circular-polarized terahertz waves. This work offers an effectively strategy to realize more powerful manipulation of terahertz wave.

  7. Integrated Arrays on Silicon at Terahertz Frequencies

    NASA Technical Reports Server (NTRS)

    Chattopadhayay, Goutam; Lee, Choonsup; Jung, Cecil; Lin, Robert; Peralta, Alessandro; Mehdi, Imran; Llombert, Nuria; Thomas, Bertrand

    2011-01-01

    In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  8. Der Einfluss der Digitalisierung auf die Organisation eines Unternehmens

    NASA Astrophysics Data System (ADS)

    Walter, Wolfram M.

    Die Digitalisierung schreitet mit großen Schritten voran. Dies wirkt sich nicht nur auf die Gesellschaft im Grundsatz, sondern auch auf das Verhalten der Kunden aus. Neue Kommunikationswege beschleunigen die Interaktion zwischen Unternehmen und Verbraucher. Im Vergleich mit großen Internetfirmen werden etablierte Dienstleistungsunternehmen - vom Energieversorger bis zu Versicherungen - stark unter Druck gesetzt, sich noch intensiver mit dem Kundenservice auseinanderzusetzen. Dies wird nur möglich sein, wenn sich die Organisationen entsprechend positionieren und sich frühzeitig auf die Veränderungen einstellen. Hieraus ergeben sich mehr Chancen als Risiken, zumal es nicht nur neue Prozesse, sondern auch neue Berufsbilder geben wird.

  9. Tunable terahertz radiation source

    DOEpatents

    Boulaevskii, Lev; Feldmann, David M; Jia, Quanxi; Koshelev, Alexei; Moody, Nathan A

    2014-01-21

    Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

  10. Broadband terahertz-power extracting by using electron cyclotron maser.

    PubMed

    Pan, Shi; Du, Chao-Hai; Qi, Xiang-Bo; Liu, Pu-Kun

    2017-08-04

    Terahertz applications urgently require high performance and room temperature terahertz sources. The gyrotron based on the principle of electron cyclotron maser is able to generate watt-to-megawatt level terahertz radiation, and becomes an exceptional role in the frontiers of energy, security and biomedicine. However, in normal conditions, a terahertz gyrotron could generate terahertz radiation with high efficiency on a single frequency or with low efficiency in a relatively narrow tuning band. Here a frequency tuning scheme for the terahertz gyrotron utilizing sequentially switching among several whispering-gallery modes is proposed to reach high performance with broadband, coherence and high power simultaneously. Such mode-switching gyrotron has the potential of generating broadband radiation with 100-GHz-level bandwidth. Even wider bandwidth is limited by the frequency-dependent effective electrical length of the cavity. Preliminary investigation applies a pre-bunched circuit to the single-mode wide-band tuning. Then, more broadband sweeping is produced by mode switching in great-range magnetic tuning. The effect of mode competition, as well as critical engineering techniques on frequency tuning is discussed to confirm the feasibility for the case close to reality. This multi-mode-switching scheme could make gyrotron a promising device towards bridging the so-called terahertz gap.

  11. Etude des phenomenes dynamiques ultrarapides et des caracteristiques impulsionnelles d'emission terahertz du supraconducteur YBCO

    NASA Astrophysics Data System (ADS)

    Savard, Stephane

    Les premieres etudes d'antennes a base de supraconducteurs a haute temperature critique emettant une impulsion electromagnetique dont le contenu en frequence se situe dans le domaine terahertz remontent a 1996. Une antenne supraconductrice est formee d'un micro-pont d'une couche mince supraconductrice sur lequel un courant continu est applique. Un faisceau laser dans le visible est focalise sur le micro-pont et place le supraconducteur dans un etat hors-equilibre ou des paires sont brisees. Grace a la relaxation des quasiparticules en surplus et eventuellement de la reformation des paires supraconductrices, nous pouvons etudier la nature de la supraconductivite. L'analyse de la cinetique temporelle du champ electromagnetique emis par une telle antenne terahertz supraconductrice s'est averee utile pour decrire qualitativement les caracteristiques de celle-ci en fonction des parametres d'operation tels que le courant applique, la temperature et la puissance d'excitation. La comprehension de l'etat hors-equilibre est la cle pour comprendre le fonctionnement des antennes terahertz supraconductrices a haute temperature critique. Dans le but de comprendre ultimement cet etat hors-equilibre, nous avions besoin d'une methode et d'un modele pour extraire de facon plus systematique les proprietes intrinseques du materiau qui compose l'antenne terahertz a partir des caracteristiques d'emission de celle-ci. Nous avons developpe une procedure pour calibrer le spectrometre dans le domaine temporel en utilisant des antennes terahertz de GaAs bombarde aux protons H+ comme emetteur et detecteur. Une fois le montage calibre, nous y avons insere une antenne emettrice dipolaire de YBa 2Cu3O7-delta . Un modele avec des fonctions exponentielles de montee et de descente du signal est utilise pour lisser le spectre du champ electromagnetique de l'antenne de YBa 2Cu3O7-delta, ce qui nous permet d'extraire les proprietes intrinseques de ce dernier. Pour confirmer la validite du modele

  12. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs < 111>B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs < 111>A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be < 111>-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around < 111> directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  13. Design, fabrication, and experimental characterization of plasmonic photoconductive terahertz emitters.

    PubMed

    Berry, Christopher; Hashemi, Mohammad Reza; Unlu, Mehmet; Jarrahi, Mona

    2013-07-08

    In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation (1-8). Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors (9). Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 (10).

  14. Targeting of AUF1 to vascular endothelial cells as a novel anti-aging therapy.

    PubMed

    He, Jian; Jiang, Ya-Feng; Liang, Liu; Wang, Du-Jin; Wei, Wen-Xin; Ji, Pan-Pan; Huang, Yao-Chan; Song, Hui; Lu, Xiao-Ling; Zhao, Yong-Xiang

    2017-08-01

    Inhibition of aging of vascular endothelial cells (VECs) may delay aging and prolong life. The goal of this study was to prepare anti-CD31 monoclonal antibody conjugated PEG-modified liposomes containing the AU-rich region connecting factor 1 (AUF1) gene (CD31-PILs-AUF1) and to explore the effects of targeting CD31-PILs-AUF1 to aging VECs. The mean particle sizes of various PEGylated immunoliposomes (PILs) were measured using a Zetasizer Nano ZS. Gel retardation assay was used to confirm whether PILs had encapsulated the AUF1 plasmid successfully. Fluorescence microscopy and flow cytometry were used to quantify binding of CD31-PILs-AUF1 to target cells. Flow cytometry was also used to analyze the cell cycles of aging bEnd3 cells treated with CD31-PILs-AUF1. We also developed an aging mouse model by treating mice with D-galactose. Enzyme-linked immunosorbent assay (ELISA) was used to evaluate the levels of interleukin-6 (IL-6) and tumor necrosis factor-α (TNF-α). The malondialdehyde (MDA) and the superoxide dismutase (SOD) levels were detected by commercial kits. Hematoxylin-eosin (HE) staining was used to determine whether treatment with CD31-PILs-AUF1 was toxic to the mice. CD31-PILs-AUF1 specifically could targeted bEnd3 VECs and increased the percentage of cells in the S and G2/M phases of aging bEnd3 cells. ELISA showed that content of the IL-6 and TNF-α decreased in CD31-PILs-AUF1 group. The level of SOD increased, whereas MDA decreased in the CD31-PILs-AUF1 group. Additionally, CD31-PILs-AUF1 was not toxic to the mice. CD31-PILs-AUF1 targets VECs and may delay their senescence.

  15. Targeting of AUF1 to vascular endothelial cells as a novel anti-aging therapy

    PubMed Central

    He, Jian; Jiang, Ya-Feng; Liang, Liu; Wang, Du-Jin; Wei, Wen-Xin; Ji, Pan-Pan; Huang, Yao-Chan; Song, Hui; Lu, Xiao-Ling; Zhao, Yong-Xiang

    2017-01-01

    Background Inhibition of aging of vascular endothelial cells (VECs) may delay aging and prolong life. The goal of this study was to prepare anti-CD31 monoclonal antibody conjugated PEG-modified liposomes containing the AU-rich region connecting factor 1 (AUF1) gene (CD31-PILs-AUF1) and to explore the effects of targeting CD31-PILs-AUF1 to aging VECs. Methods The mean particle sizes of various PEGylated immunoliposomes (PILs) were measured using a Zetasizer Nano ZS. Gel retardation assay was used to confirm whether PILs had encapsulated the AUF1 plasmid successfully. Fluorescence microscopy and flow cytometry were used to quantify binding of CD31-PILs-AUF1 to target cells. Flow cytometry was also used to analyze the cell cycles of aging bEnd3 cells treated with CD31-PILs-AUF1. We also developed an aging mouse model by treating mice with D-galactose. Enzyme-linked immunosorbent assay (ELISA) was used to evaluate the levels of interleukin-6 (IL-6) and tumor necrosis factor-α (TNF-α). The malondialdehyde (MDA) and the superoxide dismutase (SOD) levels were detected by commercial kits. Hematoxylin-eosin (HE) staining was used to determine whether treatment with CD31-PILs-AUF1 was toxic to the mice. Results CD31-PILs-AUF1 specifically could targeted bEnd3 VECs and increased the percentage of cells in the S and G2/M phases of aging bEnd3 cells. ELISA showed that content of the IL-6 and TNF-α decreased in CD31-PILs-AUF1 group. The level of SOD increased, whereas MDA decreased in the CD31-PILs-AUF1 group. Additionally, CD31-PILs-AUF1 was not toxic to the mice. Conclusion CD31-PILs-AUF1 targets VECs and may delay their senescence. PMID:29089968

  16. Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene.

    PubMed

    Crosse, J A; Xu, Xiaodong; Sherwin, Mark S; Liu, R B

    2014-09-24

    In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron-hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm(-1)), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm(-1) can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron-hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications.

  17. Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene

    PubMed Central

    Crosse, J. A.; Xu, Xiaodong; Sherwin, Mark S.; Liu, R. B.

    2014-01-01

    In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron–hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm−1), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm−1 can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron–hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications. PMID:25249245

  18. Photonics and terahertz technologies: part 2

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2011-10-01

    This digest paper debates basic features of the terahertz band of frequencies and compares it to the classical photonics. There are presented fundamental characteristics of the basic terahertz system consisting of a THz source, propagation media, transmission lines, THz signal processing, and detectors. Such a system finds research application, but also practical in two main areas: terahertz imaging - transmission and reflective, and as a close range THz radar, but also as sensory systems mainly for molecular sensing. There were launched in this country a few THz research projects concerning the THz sources, detectors and their applications. Among these projects there is an infrastructural one called FOTEH, opened at the WUT. The details of this project are debated and the consequences of its realization in this country. The first part of the paper is an introduction debating THz band and comparing it with the photonics one. The second part presents the assumptions of the infrastructural FOTEH project on Photonics and Terahertz Technologies. The project is expected to have impact on the development of photonics and relate fields in Poland.

  19. Photoinduced Nonlinear Mixing of Terahertz Dipole Resonances in Graphene Metadevices.

    PubMed

    In, Chihun; Kim, Hyeon-Don; Min, Bumki; Choi, Hyunyong

    2016-02-17

    The first experimental demonstration of nonlinear terahertz difference-frequency generation in a hybrid graphene metadevice is reported. Decades of research have revealed that terahertz-wave generation is impossible in single-layer graphene. This limitation is overcome and nonlinear terahertz generation by ultra-short optical pulse injection is demonstrated. This device is an essential step toward atomically thin, nonlinear terahertz optoelectronic components. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. An Overview of the Technological and Scientific Achievements of the Terahertz

    NASA Astrophysics Data System (ADS)

    Rostami, Ali; Rasooli, Hassan; Baghban, Hamed

    2011-01-01

    Due to the importance of terahertz radiation in the past several years in spectroscopy, astrophysics, and imaging techniques namely for biomedical applications (its low interference and non-ionizing characteristics, has been made to be a good candidate to be used as a powerful technique for safe, in vivo medical imaging), we decided to review of the terahertz technology and its associated science achievements. The review consists of terahertz terminology, different applications, and main components which are used for detection and generation of terahertz radiation. Also a brief theoretical study of generation and detection of terahertz pulses will be considered. Finally, the chapter will be ended by providing the usage of organic materials for generation and detection of terahertz radiation.

  1. FDTD-based computed terahertz wave propagation in multilayer medium structures

    NASA Astrophysics Data System (ADS)

    Tu, Wan-li; Zhong, Shun-cong; Yao, Hai-zi; Shen, Yao-chun

    2013-08-01

    The terahertz region of the electromagnetic spectrum spans the frequency range of 0.1THz~10THz, which means it sandwiches between the mid-infrared (IR) and the millimeter/ microwave. With the development and commercialization of terahertz pulsed spectroscopy (TPS) and terahertz pulsed imaging (TPI) systems, terahertz technologies have been widely used in the sensing and imaging fields. It allows high quality cross-sectional images from within scattering media to be obtained nondestructively. Characterizing the interaction of terahertz radiation with multilayer medium structures is critical for the development of nondestructive testing technology. Currently, there was much experimental investigation of using TPI for the characterization of terahertz radiation in materials (e.g., pharmaceutical tablet coatings), but there were few theoretical researches on propagation of terahertz radiation in multilayer medium structures. Finite Difference Time Domain (FDTD) algorithm is a proven method for electromagnetic scattering theory, which analyzes continuous electromagnetic problems by employing finite difference and obtains electromagnetic field value at the sampling point to approach the actual continuous solutions. In the present work, we investigated the propagation of terahertz radiation in multilayer medium structures based on FDTD method. The model of multilayer medium structures under the THz frequency plane wave incidence was established, and the reflected radiation properties were recorded and analyzed. The terahertz radiation used was broad-band in the frequency up to 2 THz. A batch of single layer coated pharmaceutical tablets, whose coating thickness in the range of 40~100μm, was computed by FDTD method. We found that the simulation results on pharmaceutical tablet coatings were in good agreement with the experimental results obtained using a commercial system (TPI imaga 2000, TeraView, Cambridge, UK) , demonstrating its usefulness in simulating and analyzing

  2. Subwavelength focusing of terahertz waves in silicon hyperbolic metamaterials.

    PubMed

    Kannegulla, Akash; Cheng, Li-Jing

    2016-08-01

    We theoretically demonstrate the subwavelength focusing of terahertz (THz) waves in a hyperbolic metamaterial (HMM) based on a two-dimensional subwavelength silicon pillar array microstructure. The silicon microstructure with a doping concentration of at least 1017  cm-3 offers a hyperbolic dispersion at terahertz frequency range and promises the focusing of terahertz Gaussian beams. The results agree with the simulation based on effective medium theory. The focusing effect can be controlled by the doping concentration, which determines the real part of the out-of-plane permittivity and, therefore, the refraction angles in HMM. The focusing property in the HMM structure allows the propagation of terahertz wave through a subwavelength aperture. The silicon-based HMM structure can be realized using microfabrication technologies and has the potential to advance terahertz imaging with subwavelength resolution.

  3. Compact terahertz spectrometer based on disordered rough surfaces

    NASA Astrophysics Data System (ADS)

    Yang, Tao; Jiang, Bing; Ge, Jia-cheng; Zhu, Yong-yuan; Li, Xing-ao; Huang, Wei

    2018-01-01

    In this paper, a compact spectrometer based on disordered rough surfaces for operation in the terahertz band is presented. The proposed spectrometer consists of three components, which are used for dispersion, modulation and detection respectively. The disordered rough surfaces, which are acted as the dispersion component, are modulated by the modulation component. Different scattering intensities are captured by the detection component with different extent of modulation. With a calibration measurement process, one can reconstruct the spectra of the probe terahertz beam by solving a system of simultaneous linear equations. A Tikhonov regularization approach has been implemented to improve the accuracy of the spectral reconstruction. The reported broadband, compact, high-resolution terahertz spectrometer is well suited for portable terahertz spectroscopy applications.

  4. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    PubMed

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  5. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  6. Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields.

    PubMed

    Noe, G Timothy; Katayama, Ikufumi; Katsutani, Fumiya; Allred, James J; Horowitz, Jeffrey A; Sullivan, David M; Zhang, Qi; Sekiguchi, Fumiya; Woods, Gary L; Hoffmann, Matthias C; Nojiri, Hiroyuki; Takeda, Jun; Kono, Junichiro

    2016-12-26

    We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers in the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.

  7. Elastomeric silicone substrates for terahertz fishnet metamaterials

    NASA Astrophysics Data System (ADS)

    Khodasevych, I. E.; Shah, C. M.; Sriram, S.; Bhaskaran, M.; Withayachumnankul, W.; Ung, B. S. Y.; Lin, H.; Rowe, W. S. T.; Abbott, D.; Mitchell, A.

    2012-02-01

    In this work, we characterize the electromagnetic properties of polydimethylsiloxane (PDMS) and use this as a free-standing substrate for the realization of flexible fishnet metamaterials at terahertz frequencies. Across the 0.2-2.5 THz band, the refractive index and absorption coefficient of PDMS are estimated as 1.55 and 0-22 cm-1, respectively. Electromagnetic modeling, multi-layer flexible electronics microfabrication, and terahertz time-domain spectroscopy are used in the design, fabrication, and characterization of the metamaterials, respectively. The properties of PDMS add a degree of freedom to terahertz metamaterials, with the potential for tuning by elastic deformation or integrated microfluidics.

  8. Characteristics of GaAs with inverted thermal conversion

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

  9. Plasmon enhanced terahertz emission from single layer graphene.

    PubMed

    Bahk, Young-Mi; Ramakrishnan, Gopakumar; Choi, Jongho; Song, Hyelynn; Choi, Geunchang; Kim, Yong Hyup; Ahn, Kwang Jun; Kim, Dai-Sik; Planken, Paul C M

    2014-09-23

    We show that surface plasmons, excited with femtosecond laser pulses on continuous or discontinuous gold substrates, strongly enhance the generation and emission of ultrashort, broadband terahertz pulses from single layer graphene. Without surface plasmon excitation, for graphene on glass, 'nonresonant laser-pulse-induced photon drag currents' appear to be responsible for the relatively weak emission of both s- and p-polarized terahertz pulses. For graphene on a discontinuous layer of gold, only the emission of the p-polarized terahertz electric field is enhanced, whereas the s-polarized component remains largely unaffected, suggesting the presence of an additional terahertz generation mechanism. We argue that in the latter case, 'surface-plasmon-enhanced optical rectification', made possible by the lack of inversion symmetry at the graphene on gold surface, is responsible for the strongly enhanced emission. The enhancement occurs because the electric field of surface plasmons is localized and enhanced where the graphene is located: at the surface of the metal. We believe that our results point the way to small, thin, and more efficient terahertz photonic devices.

  10. Cellular mRNA decay protein AUF1 negatively regulates enterovirus and human rhinovirus infections.

    PubMed

    Cathcart, Andrea L; Rozovics, Janet M; Semler, Bert L

    2013-10-01

    To successfully complete their replication cycles, picornaviruses modify several host proteins to alter the cellular environment to favor virus production. One such target of viral proteinase cleavage is AU-rich binding factor 1 (AUF1), a cellular protein that binds to AU-rich elements, or AREs, in the 3' noncoding regions (NCRs) of mRNAs to affect the stability of the RNA. Previous studies found that, during poliovirus or human rhinovirus infection, AUF1 is cleaved by the viral proteinase 3CD and that AUF1 can interact with the long 5' NCR of these viruses in vitro. Here, we expand on these initial findings to demonstrate that all four isoforms of AUF1 bind directly to stem-loop IV of the poliovirus 5' NCR, an interaction that is inhibited through proteolytic cleavage of AUF1 by the viral proteinase 3CD. Endogenous AUF1 was observed to relocalize to the cytoplasm of infected cells in a viral protein 2A-driven manner and to partially colocalize with the viral protein 3CD. We identify a negative role for AUF1 in poliovirus infection, as AUF1 inhibited viral translation and, ultimately, overall viral titers. Our findings also demonstrate that AUF1 functions as an antiviral factor during infection by coxsackievirus or human rhinovirus, suggesting a common mechanism that targets these related picornaviruses.

  11. Cellular mRNA Decay Protein AUF1 Negatively Regulates Enterovirus and Human Rhinovirus Infections

    PubMed Central

    Cathcart, Andrea L.; Rozovics, Janet M.

    2013-01-01

    To successfully complete their replication cycles, picornaviruses modify several host proteins to alter the cellular environment to favor virus production. One such target of viral proteinase cleavage is AU-rich binding factor 1 (AUF1), a cellular protein that binds to AU-rich elements, or AREs, in the 3′ noncoding regions (NCRs) of mRNAs to affect the stability of the RNA. Previous studies found that, during poliovirus or human rhinovirus infection, AUF1 is cleaved by the viral proteinase 3CD and that AUF1 can interact with the long 5′ NCR of these viruses in vitro. Here, we expand on these initial findings to demonstrate that all four isoforms of AUF1 bind directly to stem-loop IV of the poliovirus 5′ NCR, an interaction that is inhibited through proteolytic cleavage of AUF1 by the viral proteinase 3CD. Endogenous AUF1 was observed to relocalize to the cytoplasm of infected cells in a viral protein 2A-driven manner and to partially colocalize with the viral protein 3CD. We identify a negative role for AUF1 in poliovirus infection, as AUF1 inhibited viral translation and, ultimately, overall viral titers. Our findings also demonstrate that AUF1 functions as an antiviral factor during infection by coxsackievirus or human rhinovirus, suggesting a common mechanism that targets these related picornaviruses. PMID:23903828

  12. Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

    PubMed

    Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

    2013-01-01

    Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

  13. Mechanism and modulation of terahertz generation from a semimetal - graphite

    PubMed Central

    Ye, Tong; Meng, Sheng; Zhang, Jin; E, Yiwen; Yang, Yuping; Liu, Wuming; Yin, Yan; Wang, Li

    2016-01-01

    Semi-metals might offer a stronger interaction and a better confinement for terahertz wave than semiconductors, while preserve tunability. Particularly, graphene-based materials are envisioned as terahertz modulators, filters and ultra-broadband sources. However, the understanding of terahertz generation from those materials is still not clear, thus limits us recognizing the potential and improving device performances. Graphite, the mother material of graphene and a typical bulk semi-metal, is a good system to study semi-metals and graphene-based materials. Here we experimentally modulate and maximize the terahertz signal from graphite surface, thus reveal the mechanism - surface field driving photon induced carriers into transient current to radiate terahertz wave. We also discuss the differences between graphite and semiconductors; particularly graphite shows very weak temperature dependency from room temperature to 80 °C. Above knowledge will help us understand terahertz generations, achieve maximum output and electric modulation, in semi-metal or graphene based devices. PMID:26972818

  14. Mechanism and modulation of terahertz generation from a semimetal--graphite.

    PubMed

    Ye, Tong; Meng, Sheng; Zhang, Jin; E, Yiwen; Yang, Yuping; Liu, Wuming; Yin, Yan; Wang, Li

    2016-03-14

    Semi-metals might offer a stronger interaction and a better confinement for terahertz wave than semiconductors, while preserve tunability. Particularly, graphene-based materials are envisioned as terahertz modulators, filters and ultra-broadband sources. However, the understanding of terahertz generation from those materials is still not clear, thus limits us recognizing the potential and improving device performances. Graphite, the mother material of graphene and a typical bulk semi-metal, is a good system to study semi-metals and graphene-based materials. Here we experimentally modulate and maximize the terahertz signal from graphite surface, thus reveal the mechanism--surface field driving photon induced carriers into transient current to radiate terahertz wave. We also discuss the differences between graphite and semiconductors; particularly graphite shows very weak temperature dependency from room temperature to 80 °C. Above knowledge will help us understand terahertz generations, achieve maximum output and electric modulation, in semi-metal or graphene based devices.

  15. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires.

    PubMed

    Yan, Jie-Yun

    2018-06-13

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  16. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  17. Strong emission of terahertz radiation from nanostructured Ge surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kang, Chul; Maeng, Inhee; Kee, Chul-Sik, E-mail: cskee@gist.ac.kr

    2015-06-29

    Indirect band gap semiconductors are not efficient emitters of terahertz radiation. Here, we report strong emission of terahertz radiation from germanium wafers with nanostructured surfaces. The amplitude of THz radiation from an array of nano-bullets (nano-cones) is more than five (three) times larger than that from a bare-Ge wafer. The power of the terahertz radiation from a Ge wafer with an array of nano-bullets is comparable to that from n-GaAs wafers, which have been widely used as a terahertz source. We find that the THz radiation from Ge wafers with the nano-bullets is even more powerful than that from n-GaAsmore » for frequencies below 0.6 THz. Our results suggest that introducing properly designed nanostructures on indirect band gap semiconductor wafers is a simple and cheap method to improve the terahertz emission efficiency of the wafers significantly.« less

  18. Two-dimensional tomographic terahertz imaging by homodyne self-mixing.

    PubMed

    Mohr, Till; Breuer, Stefan; Giuliani, G; Elsäßer, Wolfgang

    2015-10-19

    We realize a compact two-dimensional tomographic terahertz imaging experiment involving only one photoconductive antenna (PCA) simultaneously serving as a transmitter and receiver of the terahertz radiation. A hollow-core Teflon cylinder filled with α-Lactose monohydrate powder is studied at two terahertz frequencies, far away and at a specific absorption line of the powder. This sample is placed between the antenna and a chopper wheel, which serves as back reflector of the terahertz radiation into the PCA. Amplitude and phase information of the continuous-wave (CW) terahertz radiation are extracted from the measured homodyne self-mixing (HSM) signal after interaction with the cylinder. The influence of refraction is studied by modeling the set-up utilizing ZEMAX and is discussed by means of the measured 1D projections. The tomographic reconstruction by using the Simultaneous Algebraic Reconstruction Technique (SART) allows to identify both object geometry and α-Lactose filling.

  19. [Development of Terahertz Imaging Technology in the Assessment of Burn Injuries].

    PubMed

    Zhu, Xinjian; He, Xuan; Wang, Pin; Gao, Dandan; Qiu, Yan; He, Qinghua; Wu, Baoming

    2016-02-01

    Terahertz waves have unique properties and advantages, which makes it gain increasing attention and applications in the biomedical field. Burns is a common clinical trauma. Since the water-sensitive and non-destructive characteristics of terahertz, terahertz imaging techniques can be used to detect burns. So far, terahertz imaging technology in the assessment of burn injuries has been developed from ex vivo to in vivo, and high-resolution images can be obtained through the gauzes and plasters. In this paper, we mainly introduces the application of terahertz imaging technology and development in the assessment of burn injuries.

  20. Electrodeposition of Metal on GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

    2010-10-01

    Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

  1. Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Noe, II, G. Timothy; Katayama, Ikufumi; Katsutani, Fumiya

    Here, we have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers inmore » the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.« less

  2. Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields

    DOE PAGES

    Noe, II, G. Timothy; Katayama, Ikufumi; Katsutani, Fumiya; ...

    2016-12-22

    Here, we have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers inmore » the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.« less

  3. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  4. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  5. Terahertz Analysis of Quinacridone Pigments

    NASA Astrophysics Data System (ADS)

    Squires, A. D.; Kelly, M.; Lewis, R. A.

    2017-03-01

    We present terahertz spectroscopy and analysis of two commercially available quinacridone pigments in the 0.5-4.5 THz range. Our results show a clear distinction between quinacridone red and magenta pigments. We reveal four definite absorptions in the terahertz regime common to both pigments, but offset between the pigments by ˜0.2 THz. The lowest-energy line in each pigment is observed to increase in frequency by ˜0.1 THz as the temperature is reduced from 300 to 12 K.

  6. High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers.

    PubMed

    Deutsch, Christoph; Kainz, Martin Alexander; Krall, Michael; Brandstetter, Martin; Bachmann, Dominic; Schönhuber, Sebastian; Detz, Hermann; Zederbauer, Tobias; MacFarland, Donald; Andrews, Aaron Maxwell; Schrenk, Werner; Beck, Mattias; Ohtani, Keita; Faist, Jérôme; Strasser, Gottfried; Unterrainer, Karl

    2017-04-19

    We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 10 10 cm -2 , the highest peak output power of 151 mW is found for 7.3 × 10 10 cm -2 . Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.

  7. High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

    PubMed Central

    2017-01-01

    We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 1010 cm–2, the highest peak output power of 151 mW is found for 7.3 × 1010 cm–2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures. PMID:28470028

  8. FRET-detectable interactions between the ARE binding proteins, HuR and p37AUF1

    PubMed Central

    David, Pamela S.; Tanveer, Rasheeda; Port, J. David

    2007-01-01

    A number of highly regulated gene classes are regulated post-transcriptionally at the level of mRNA stability. A central feature in these mRNAs is the presence of A+U-rich elements (ARE) within their 3′ UTRs. Two ARE binding proteins, HuR and AUF1, are associated with mRNA stabilization and destabilization, respectively. Previous studies have demonstrated homomultimerization of each protein and the capacity to bind simultaneous or competitively to a single ARE. To investigate this possibility further, cell biological and biophysical approaches were undertaken. Protein–protein interaction was monitored by fluorescence resonance energy transfer (FRET) and by immunocytochemistry in live and fixed cells using fluorescently labeled CFP/YFP fusion proteins of HuR and p37AUF1. Strong nuclear FRET between HuR/HuR and AUF1/AUF1 homodimers as well as HuR/AUF1 heterodimers was observed. Treatment with the MAP kinase activator, anisomycin, which commonly stabilizes ARE-containing mRNAs, caused rapid nuclear to cytoplasmic shuttling of HuR. AUF1 also underwent shuttling, but on a longer time scale. After shuttling, HuR/HuR, AUF1/AUF1, and HuR/AUF1, FRET was also observed in the cytoplasm. In further studies, arsenite rapidly induced the formation of stress granules containing HuR and TIA-1 but not AUF1. The current studies demonstrate that two mRNA binding proteins, HuR and AUF1, are colocalized and are capable of functional interaction in both the nucleus and cytoplasm. FRET-based detection of AUF1/HuR interaction may serve as a basis of opening up new dimensions in delineating the functional interaction of mRNA binding proteins with RNA turnover. PMID:17626845

  9. Investigation of broadband terahertz generation from metasurface

    NASA Astrophysics Data System (ADS)

    Fang, Ming; Niu, Kaikun; Huang, Zhiaxiang; Sha, Wei E. I.; Wu, Xianliang; Koschny, Thomas; Soukoulis, Costas M.

    2018-05-01

    The nonlinear metamaterials have been shown to provide nonlinear properties with high nonlinear conversion efficiency and in a myriad of light manipulation. Here we study terahertz generation from nonlinear metasurface consisting of single layer nanoscale split-ring resonator array. The terahertz generation due to optical rectification by the second-order nonlinearity of the split-ring resonator is investigated by a time-domain implementation of the hydrodynamic model for electron dynamics in metal. The results show that the nonlinear metasurface enables us to generate broadband terahertz radiation and free from quasi-phase-matching conditions. The proposed scheme provides a new concept of broadband THz source and designing nonlinear plasmonic metamaterials.

  10. Investigation of broadband terahertz generation from metasurface.

    PubMed

    Fang, Ming; Niu, Kaikun; Huang, Zhiaxiang; Sha, Wei E I; Wu, Xianliang; Koschny, Thomas; Soukoulis, Costas M

    2018-05-28

    The nonlinear metamaterials have been shown to provide nonlinear properties with high nonlinear conversion efficiency and in a myriad of light manipulation. Here we study terahertz generation from nonlinear metasurface consisting of single layer nanoscale split-ring resonator array. The terahertz generation due to optical rectification by the second-order nonlinearity of the split-ring resonator is investigated by a time-domain implementation of the hydrodynamic model for electron dynamics in metal. The results show that the nonlinear metasurface enables us to generate broadband terahertz radiation and free from quasi-phase-matching conditions. The proposed scheme provides a new concept of broadband THz source and designing nonlinear plasmonic metamaterials.

  11. Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy

    NASA Astrophysics Data System (ADS)

    Mabilangan, Arvin I.; Lopez, Lorenzo P.; Faustino, Maria Angela B.; Muldera, Joselito E.; Cabello, Neil Irvin F.; Estacio, Elmer S.; Salvador, Arnel A.; Somintac, Armando S.

    2016-12-01

    Porosity dependent terahertz emission of porous silicon (PSi) was studied. The PSi samples were fabricated via electrochemical etching of boron-doped (100) silicon in a solution containing 48% hydrofluoric acid, deionized water and absolute ethanol in a 1:3:4 volumetric ratio. The porosity was controlled by varying the supplied anodic current for each sample. The samples were then optically characterized via normal incidence reflectance spectroscopy to obtain values for their respective refractive indices and porosities. Absorbance of each sample was also computed using the data from its respective reflectance spectrum. Terahertz emission of each sample was acquired through terahertz - time domain spectroscopy. A decreasing trend in the THz signal power was observed as the porosity of each PSi was increased. This was caused by the decrease in the absorption strength as the silicon crystallite size in the PSi was minimized.

  12. Terahertz Imaging of Three-Dimensional Dehydrated Breast Cancer Tumors

    NASA Astrophysics Data System (ADS)

    Bowman, Tyler; Wu, Yuhao; Gauch, John; Campbell, Lucas K.; El-Shenawee, Magda

    2017-06-01

    This work presents the application of terahertz imaging to three-dimensional formalin-fixed, paraffin-embedded human breast cancer tumors. The results demonstrate the capability of terahertz for in-depth scanning to produce cross section images without the need to slice the tumor. Samples of tumors excised from women diagnosed with infiltrating ductal carcinoma and lobular carcinoma are investigated using a pulsed terahertz time domain imaging system. A time of flight estimation is used to obtain vertical and horizontal cross section images of tumor tissues embedded in paraffin block. Strong agreement is shown comparing the terahertz images obtained by electronically scanning the tumor in-depth in comparison with histopathology images. The detection of cancer tissue inside the block is found to be accurate to depths over 1 mm. Image processing techniques are applied to provide improved contrast and automation of the obtained terahertz images. In particular, unsharp masking and edge detection methods are found to be most effective for three-dimensional block imaging.

  13. Study on spectral features of terahertz wave propagating in the air

    NASA Astrophysics Data System (ADS)

    Kang, Shengwu

    2018-03-01

    Now, Terahertz technology has been widely used in many fields, which is mainly related to imaging detection. While the frequency range of the terahertz-wave is located between microwave and visible light, whether the existing visible light principle is applicable to terahertz-wave should be studied again. Through experiment, we measure the terahertz-wave field amplitude distribution on the receiving plane perpendicular to the direction of propagation in the air and picture out the energy distribution curve; derive an energy decay formula of terahertz wave based on the results; design a terahertz wavelength apparatus using the F-P interferometer theory; test the wavelength between 1 and 3 THz from the SIFIR-50THz laser of American Corehent company; finally analyze the related factors affecting the measurement precision including the beam incident angle, mechanical vibration, temperature fluctuation and the refractive index fluctuation.

  14. High Sensitivity Terahertz Detection through Large-Area Plasmonic Nano-Antenna Arrays.

    PubMed

    Yardimci, Nezih Tolga; Jarrahi, Mona

    2017-02-16

    Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of previously demonstrated plasmonic photoconductive antennas has been limited by bandwidth constraints of their antennas and photoconductor parasitics. Here, we present a powerful technique for realizing broadband terahertz detectors through large-area plasmonic photoconductive nano-antenna arrays. A key novelty that makes the presented terahertz detector superior to the state-of-the art is a specific large-area device geometry that offers a strong interaction between the incident terahertz beam and optical pump at the nanoscale, while maintaining a broad operation bandwidth. The large device active area allows robust operation against optical and terahertz beam misalignments. We demonstrate broadband terahertz detection with signal-to-noise ratio levels as high as 107 dB.

  15. High Sensitivity Terahertz Detection through Large-Area Plasmonic Nano-Antenna Arrays

    PubMed Central

    Yardimci, Nezih Tolga; Jarrahi, Mona

    2017-01-01

    Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of previously demonstrated plasmonic photoconductive antennas has been limited by bandwidth constraints of their antennas and photoconductor parasitics. Here, we present a powerful technique for realizing broadband terahertz detectors through large-area plasmonic photoconductive nano-antenna arrays. A key novelty that makes the presented terahertz detector superior to the state-of-the art is a specific large-area device geometry that offers a strong interaction between the incident terahertz beam and optical pump at the nanoscale, while maintaining a broad operation bandwidth. The large device active area allows robust operation against optical and terahertz beam misalignments. We demonstrate broadband terahertz detection with signal-to-noise ratio levels as high as 107 dB. PMID:28205615

  16. Optically tuned terahertz modulator based on annealed multilayer MoS2.

    PubMed

    Cao, Yapeng; Gan, Sheng; Geng, Zhaoxin; Liu, Jian; Yang, Yuping; Bao, Qiaoling; Chen, Hongda

    2016-03-08

    Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

  17. Highly efficient broadband terahertz generation from ultrashort laser filamentation in liquids.

    PubMed

    Dey, Indranuj; Jana, Kamalesh; Fedorov, Vladimir Yu; Koulouklidis, Anastasios D; Mondal, Angana; Shaikh, Moniruzzaman; Sarkar, Deep; Lad, Amit D; Tzortzakis, Stelios; Couairon, Arnaud; Kumar, G Ravindra

    2017-10-30

    Generation and application of energetic, broadband terahertz pulses (bandwidth ~0.1-50 THz) is an active and contemporary area of research. The main thrust is toward the development of efficient sources with minimum complexities-a true table-top setup. In this work, we demonstrate the generation of terahertz radiation via ultrashort pulse induced filamentation in liquids-a counterintuitive observation due to their large absorption coefficient in the terahertz regime. The generated terahertz energy is more than an order of magnitude higher than that obtained from the two-color filamentation of air (the most standard table-top technique). Such high terahertz energies would generate electric fields of the order of MV cm -1 , which opens the doors for various nonlinear terahertz spectroscopic applications. The counterintuitive phenomenon has been explained via the solution of nonlinear pulse propagation equation in the liquid medium.

  18. Terahertz circular dichroism spectroscopy of biomolecules

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Galan, Jhenny; Ramian, Gerald; Savvidis, Pavlos; Scopatz, Anthony; Birge, Robert R.; Allen, S. James; Plaxco, Kevin

    2004-02-01

    Biopolymers such as proteins, DNA and RNA fold into large, macromolecular chiral structures. As charged macromolecules, they absorb strongly in the terahertz due to large-scale collective vibrational modes; as chiral objects, this absorption should be coupled with significant circular dichroism. Terahertz circular dichroism (TCD) is potentially important as a biospecific sensor, unobscured by spectral features related to abiological material. We have constructed atomistic simulations and elastic continuum models of TCD. These models estimate the magnitude of the TCD and the relation between TCD spectroscopic signatures (zero crossings) and the structure, charge distribution and mechanical properties of biomaterials. A broad band TCD spectrometer based on a polarizing interferometer is developed to explore TCD in biomolecules in aqueous solution. Preliminary results on TCD in lysozyme in water at several terahertz frequencies is presented.

  19. Broadband, Spectrally Flat, Graphene-based Terahertz Modulators.

    PubMed

    Shi, Fenghua; Chen, Yihang; Han, Peng; Tassin, Philippe

    2015-12-02

    Advances in the efficient manipulation of terahertz waves are crucial for the further development of terahertz technology, promising applications in many diverse areas, such as biotechnology and spectroscopy, to name just a few. Due to its exceptional electronic and optical properties, graphene is a good candidate for terahertz electro-absorption modulators. However, graphene-based modulators demonstrated to date are limited in bandwidth due to Fabry-Perot oscillations in the modulators' substrate. Here, a novel method is demonstrated to design electrically controlled graphene-based modulators that can achieve broadband and spectrally flat modulation of terahertz beams. In our design, a graphene layer is sandwiched between a dielectric and a slightly doped substrate on a metal reflector. It is shown that the spectral dependence of the electric field intensity at the graphene layer can be dramatically modified by optimizing the structural parameters of the device. In this way, the electric field intensity can be spectrally flat and even compensate for the dispersion of the graphene conductivity, resulting in almost invariant absorption in a wide frequency range. Modulation depths up to 76% can be achieved within a fractional operational bandwidth of over 55%. It is expected that our modulator designs will enable the use of terahertz technology in applications requiring broadband operation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Differential restriction patterns of mRNA decay factor AUF1 during picornavirus infections.

    PubMed

    Cathcart, Andrea L; Semler, Bert L

    2014-07-01

    During infection by picornaviruses, the cellular environment is modified to favour virus replication. This includes the modification of specific host proteins, including the recently discovered viral proteinase cleavage of mRNA decay factor AU-rich binding factor 1 (AUF1). This cellular RNA-binding protein was shown previously to act as a restriction factor during poliovirus, rhinovirus and coxsackievirus infection. During infection by these viruses, AUF1 relocalizes to the cytoplasm and is cleaved by the viral 3C/3CD proteinase. In this study, we demonstrated that replication of encephalomyocarditis virus (EMCV), a picornavirus belonging to the genus Cardiovirus, is AUF1 independent. During EMCV infection, AUF1 relocalized to the cytoplasm; however, unlike what is seen during enterovirus infections, AUF1 was not cleaved to detectable levels, even at late times after infection. This suggests that AUF1 does not act broadly as an inhibitor of picornavirus infections but may instead act as a selective restriction factor targeting members of the genus Enterovirus. © 2014 The Authors.

  1. Flat Terahertz Reflective Focusing Metasurface with Scanning Ability.

    PubMed

    Yi, Huan; Qu, Shi-Wei; Chen, Bao-Jie; Bai, Xue; Ng, Kung Bo; Chan, Chi Hou

    2017-06-14

    The ability to manipulate the propagation properties of electromagnetic waves, e.g., divergence, focusing, holography or deflection, is very significant in terahertz applications. Metasurfaces with flat structures are attractive for achieving such manipulations in terahertz band, as they feature low profile, lightweight, and ease of design and installation. Several types of terahertz reflective or transmitting metasurfaces with focusing function have been implemented recently, but none of them can provide scanning ability with controllable focus. Here, a flat reflective metasurface featuring controllable focal shift is proposed and experimentally demonstrated. Furthermore, the principle of designing a focus scanning reflective metasurface is presented and the focusing characteristics are discussed, including focus scanning along a line parallel or orthogonal to the metasurface with a large bandwidth. These interesting properties indicate that this flat reflective metasurface could play a key role in many terahertz imaging and detection systems.

  2. Calculation and Study of Graphene Conductivity Based on Terahertz Spectroscopy

    NASA Astrophysics Data System (ADS)

    Feng, Xiaodong; Hu, Min; Zhou, Jun; Liu, Shenggang

    2017-07-01

    Based on terahertz time-domain spectroscopy system and two-dimensional scanning control system, terahertz transmission and reflection intensity mapping images on a graphene film are obtained, respectively. Then, graphene conductivity mapping images in the frequency range 0.5 to 2.5 THz are acquired according to the calculation formula. The conductivity of graphene at some typical regions is fitted by Drude-Smith formula to quantitatively compare the transmission and reflection measurements. The results show that terahertz reflection spectroscopy has a higher signal-to-noise ratio with less interference of impurities on the back of substrates. The effect of a red laser excitation on the graphene conductivity by terahertz time-domain transmission spectroscopy is also studied. The results show that the graphene conductivity in the excitation region is enhanced while that in the adjacent area is weakened which indicates carriers transport in graphene under laser excitation. This paper can make great contribution to the study on graphene electrical and optical properties in the terahertz regime and help design graphene terahertz devices.

  3. Characterisation of semi-insulating GaAs

    NASA Technical Reports Server (NTRS)

    Walukiewicz, W.; Pawlowicz, L.; Lagowski, J.; Gatos, H. C.

    1982-01-01

    Hole and electron mobilities as functions of temperature and ionised impurity concentration are calculated for GaAs. It is shown that these calculations, when used to analyse electrical properties of semi-insulating GaAs, enable an assessment of the Fermi energy position and ionised impurity concentration to be made. In contrast to previous work, the analysis does not require any phenomenological assumptions.

  4. Technology requirements for GaAs photovoltaic arrays

    NASA Technical Reports Server (NTRS)

    Scott-Monck, J.; Rockey, D.

    1981-01-01

    An analysis based on percent GaAs solar cell weight and cost is performed to assess the utility of this cell for future space missions. It is shown that the GaAs substrate cost and the end-of-life (EOL) advantage the cell can provide over the space qualified silicon solar cell are the dominant factors determining potential use. Examples are presented to show that system level advantages resulting from reduction in solar panel area may warrant the use of GaAs at its current weight and projected initial cost provided the EOL advantage over silicon is at least 20 percent.

  5. Crystal Growth of Device Quality Gaas in Space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.

    1985-01-01

    The GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and (3) investigation of electronic properties and phenomena controlling device applications and device performance. This effort is aimed at the essential ground-based program which would insure successful experimentation with and eventually processing of GaAs in near zero gravity environment. It is believed that this program addresses in a unique way materials engineering aspects which bear directly on the future exploitation of the potential of GaAs and related materials in device and systems applications.

  6. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.

  7. Zahlen und Rechenvorgänge auf unterschiedlichen Abstraktionsniveaus

    NASA Astrophysics Data System (ADS)

    Rödler, Klaus

    "Das Verständnis geht langsam vor sich!" Diesen wichtigen Satz hörte ich bei einem Vortrag von Martin Lowsky. Auf die hier behandelte Fragestellung übertragen heißt das: Was eine Zahl ist und wie ich sie im Rechenvorgang einsetzen und interpretieren kann, das erschließt sich erst allmählich. Die Zahl des Rechenanfängers ist nicht dieselbe wie die des kompetenten Rechners und es ist nicht die Zahl des Lehrers oder der Lehrerin. Die Zahlen sind nur auf der Oberfläche der Worte und Zeichen gleich. Im Innern, im Verständnis, sind sie völlig verschieden! Ich glaube, dass die Missachtung dieser Divergenz dazu führt, dass manche Kinder in für den Lehrer und Lehrerin nicht nachvollziehbaren Routinen stecken bleiben, einfachste Informationen nicht wirklich integrieren. Die auf beiden Seiten wachsende Verunsicherung durch die nicht erkannte und daher nicht kommunizierbare Diskrepanz im inneren Zahlkonzept stört den allmählichen Aufbau strukturierter Zahlvorstellungen.

  8. Terahertz NDE for Metallic Surface Roughness Evaluation

    NASA Technical Reports Server (NTRS)

    Madaras, Eric I.; Anastasi, Robert F.

    2006-01-01

    Metallic surface roughness in a nominally smooth surface is a potential indication of material degradation or damage. When the surface is coated or covered with an opaque dielectric material, such as paint or insulation, then inspecting for surface changes becomes almost impossible. Terahertz NDE is a method capable of penetrating the coating and inspecting the metallic surface. The terahertz frequency regime is between 100 GHz and 10 THz and has a free space wavelength of 300 micrometers at 1 THz. Pulsed terahertz radiation, can be generated and detected using optical excitation of biased semiconductors with femtosecond laser pulses. The resulting time domain signal is 320 picoseconds in duration. In this application, samples are inspected with a commercial terahertz NDE system that scans the sample and generates a set of time-domain signals that are a function of the backscatter from the metallic surface. Post processing is then performed in the time and frequency domains to generate C-scan type images that show scattering effects due to surface non-uniformity.

  9. Terahertz multiheterodyne spectroscopy using laser frequency combs

    DOE PAGES

    Yang, Yang; Burghoff, David; Hayton, Darren J.; ...

    2014-07-01

    The terahertz region is of great importance for spectroscopy since many molecules have absorption fingerprints there. Frequency combs based on terahertz quantum cascade lasers feature broadband coverage and high output powers in a compact package, making them an attractive option for broadband spectroscopy. Here, we demonstrate the first multiheterodyne spectroscopy using two terahertz quantum cascade laser combs. Over a spectral range of 250 GHz, we achieve average signal-to-noise ratios of 34 dB using cryogenic detectors and 24 dB using room-temperature detectors, all in just 100 μs. As a proof of principle, we use these combs to measure the broadband transmissionmore » spectrum of etalon samples and show that, with proper signal processing, it is possible to extend the multiheterodyne spectroscopy to quantum cascade laser combs operating in pulsed mode. Here, this greatly expands the range of quantum cascade lasers that could be suitable for these techniques and allows for the creation of completely solid-state terahertz laser spectrometers.« less

  10. Multi-wavelength lenses for terahertz surface wave.

    PubMed

    Wei, Minggui; Yang, Quanlong; Xu, Quan; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2017-10-16

    Metasurface-based surface wave (SW) devices working at multi-wavelength has been continuously arousing enormous curiosity recently, especially in the terahertz community. In this work, we propose a multi-layer metasurface structure composed of metallic slit pairs to build terahertz SW devices. The slit pair has a narrow bandwidth and its response frequency can be altered by its geometric parameter, thereby suppressing the frequency crosstalk and reducing the difficulty of design. By elaborately tailoring the distribution of the slit pairs, a series of achromatic SW lenses (SWLs) working at 0.6, 0.75 and 1 THz are experimentally demonstrated by the near field scanning terahertz microscope (NSTM) system. In addition, a wavelength-division-multiplexer (WDM) is further designed and implemented, which is promising in building multiplexed devices for plasmonic circuits. The structure proposed here cannot only couple the terahertz wave from free space to SWs, but also control its propagation. Moreover, our findings demonstrate the great potential to design multi-wavelength plasmonic metasurface devices, which can be extended to microwave and visible frequencies as well.

  11. Supernormal hardness increase of dilute Ga(As, N) thin films

    NASA Astrophysics Data System (ADS)

    Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

    2017-03-01

    Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

  12. Investigation of broadband terahertz generation from metasurface

    DOE PAGES

    Fang, Ming; Niu, Kaikun; Huang, ZHixiang; ...

    2018-01-01

    The nonlinear metamaterials have been shown to provide nonlinear properties with high nonlinear conversion efficiency and in a myriad of light manipulation. Here we study terahertz generation from nonlinear metasurface consisting of single layer nanoscale split-ring resonator array. The terahertz generation due to optical rectification by the second-order nonlinearity of the split-ring resonator is investigated by a time-domain implementation of the hydrodynamic model for electron dynamics in metal. The results show that the nonlinear metasurface enables us to generate broadband terahertz radiation and free from quasi-phase-matching conditions. The proposed scheme provides a new concept of broadband THz source and designingmore » nonlinear plasmonic metamaterials.« less

  13. Investigation of broadband terahertz generation from metasurface

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fang, Ming; Niu, Kaikun; Huang, ZHixiang

    The nonlinear metamaterials have been shown to provide nonlinear properties with high nonlinear conversion efficiency and in a myriad of light manipulation. Here we study terahertz generation from nonlinear metasurface consisting of single layer nanoscale split-ring resonator array. The terahertz generation due to optical rectification by the second-order nonlinearity of the split-ring resonator is investigated by a time-domain implementation of the hydrodynamic model for electron dynamics in metal. The results show that the nonlinear metasurface enables us to generate broadband terahertz radiation and free from quasi-phase-matching conditions. The proposed scheme provides a new concept of broadband THz source and designingmore » nonlinear plasmonic metamaterials.« less

  14. Investigation of broadband terahertz generation from metasurface

    DOE PAGES

    Fang, Ming; Niu, Kaikun; Huang, ZHixiang; ...

    2018-05-21

    The nonlinear metamaterials have been shown to provide nonlinear properties with high nonlinear conversion efficiency and in a myriad of light manipulation. Here we study terahertz generation from nonlinear metasurface consisting of single layer nanoscale split-ring resonator array. The terahertz generation due to optical rectification by the second-order nonlinearity of the split-ring resonator is investigated by a time-domain implementation of the hydrodynamic model for electron dynamics in metal. The results show that the nonlinear metasurface enables us to generate broadband terahertz radiation and free from quasi-phase-matching conditions. The proposed scheme provides a new concept of broadband THz source and designingmore » nonlinear plasmonic metamaterials.« less

  15. Creating Rydberg electron wave packets using terahertz pulses

    NASA Astrophysics Data System (ADS)

    Bromage, Jake

    1999-10-01

    In this thesis I present experiments in which we excited classical-limit states of an atom using terahertz pulses. In a classical-limit state, an atom's outer electron is confined to a wave packet that orbits the core along a classical trajectory. Researchers have excited states with classical traits, but wave packets localized in all three dimensions have proved elusive. Theoretical studies have shown such states can be created using terahertz pulses. Using these techniques, we created a linear-orbit wave packet (LOWP), that is three-dimensionally localized and orbits along a line on one side of the atom's core. Terahertz pulses are sub-picosecond bursts of far- infrared radiation. Unlike ultrashort optical pulses, the electric field of terahertz pulses barely completes a single cycle. Our simulations of the atom-pulse interaction show that this electric field profile is critical in determining the quality of the wave packet. To characterize our terahertz pulses, we invented dithered-edge sampling which time- resolves the electric field using a photoconductive receiver and a triggered attenuator. We also studied how pulses are distorted after propagating through metallic structures, and used our findings to design our atomic experiments. We excited wave packets in atomic sodium using a two-step process. First, we used tunable, nanosecond dye lasers to excite an extreme Stark state. Next, we used a terahertz pump pulse to coherently redistribute population among extreme Stark states in neighboring manifolds. Interference between the final states produces a localized, dynamic LOWP. To analyze the LOWP, we ionized it with a stronger terahertz probe pulse, varying the pump-probe delay to map out its motion. We observed two strong LOWP signatures. Changing the static electric field produced small changes (2%) in the orbital period that agreed with our theoretical predictions. Secondly, because the LOWP scatters off the core, the pump-probe signal depended on the

  16. Nonlinear Terahertz Absorption of Graphene Plasmons.

    PubMed

    Jadidi, Mohammad M; König-Otto, Jacob C; Winnerl, Stephan; Sushkov, Andrei B; Drew, H Dennis; Murphy, Thomas E; Mittendorff, Martin

    2016-04-13

    Subwavelength graphene structures support localized plasmonic resonances in the terahertz and mid-infrared spectral regimes. The strong field confinement at the resonant frequency is predicted to significantly enhance the light-graphene interaction, which could enable nonlinear optics at low intensity in atomically thin, subwavelength devices. To date, the nonlinear response of graphene plasmons and their energy loss dynamics have not been experimentally studied. We measure and theoretically model the terahertz nonlinear response and energy relaxation dynamics of plasmons in graphene nanoribbons. We employ a terahertz pump-terahertz probe technique at the plasmon frequency and observe a strong saturation of plasmon absorption followed by a 10 ps relaxation time. The observed nonlinearity is enhanced by 2 orders of magnitude compared to unpatterned graphene with no plasmon resonance. We further present a thermal model for the nonlinear plasmonic absorption that supports the experimental results. The model shows that the observed strong linearity is caused by an unexpected red shift of plasmon resonance together with a broadening and weakening of the resonance caused by the transient increase in electron temperature. The model further predicts that even greater resonant enhancement of the nonlinear response can be expected in high-mobility graphene, suggesting that nonlinear graphene plasmonic devices could be promising candidates for nonlinear optical processing.

  17. Ultra-broadband near-field antenna for terahertz plasmonic applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Polischuk, O. V., E-mail: polischuk.sfire@mail.ru; Popov, V. V., E-mail: popov-slava@yahoo.co.uk; Knap, W.

    A new type of ultra-broadband near-field antenna for terahertz frequencies is proposed. This antenna is a short-period planar metal array. It is theoretically shown that irradiation of the short-period array antenna by a plane homogeneous terahertz waves excite a highly inhomogeneous near electric field near the metal array. In this case, the amplitude of the excited inhomogeneous near electric field is almost independent of frequency in the entire terahertz frequency range. The excitation of plasma oscillations in a two-dimensional electron system using the antenna under study is numerically simulated in the resonant and non-resonant plasmonic response modes. This type ofmore » antenna can be used for developing ultra-broadband plasmonic detectors of terahertz radiation.« less

  18. Compact terahertz wave polarization beam splitter using photonic crystal.

    PubMed

    Mo, Guo-Qiang; Li, Jiu-Sheng

    2016-09-01

    Electromagnetic polarization conveys valuable information for signal processing. Manipulation of a terahertz wave polarization state exhibits tremendous potential in developing applications of terahertz science and technology. We propose an approach to efficiently split transverse-electric and transverse-magnetic polarized terahertz waves into different propagation directions over the frequency range from 0.9998 to 1.0007 THz. Both the plane wave expansion method and the finite-difference time-domain method are used to calculate and analyze the transmission characteristics of the proposed device. The present device is very compact and the total size is 1.02  mm×0.99  mm. This polarization beam splitter performance indicates that the structure has a potential application for forthcoming terahertz-wave integrated circuit fields.

  19. Quantitative analyses of tartaric acid based on terahertz time domain spectroscopy

    NASA Astrophysics Data System (ADS)

    Cao, Binghua; Fan, Mengbao

    2010-10-01

    Terahertz wave is the electromagnetic spectrum situated between microwave and infrared wave. Quantitative analysis based on terahertz spectroscopy is very important for the application of terahertz techniques. But how to realize it is still under study. L-tartaric acid is widely used as acidulant in beverage, and other food, such as soft drinks, wine, candy, bread and some colloidal sweetmeats. In this paper, terahertz time-domain spectroscopy is applied to quantify the tartaric acid. Two methods are employed to process the terahertz spectra of different samples with different content of tartaric acid. The first one is linear regression combining correlation analysis. The second is partial least square (PLS), in which the absorption spectra in the 0.8-1.4THz region are used to quantify the tartaric acid. To compare the performance of these two principles, the relative error of the two methods is analyzed. For this experiment, the first method does better than the second one. But the first method is suitable for the quantitative analysis of materials which has obvious terahertz absorption peaks, while for material which has no obvious terahertz absorption peaks, the second one is more appropriate.

  20. Synthetic aperture in terahertz in-line digital holography for resolution enhancement.

    PubMed

    Huang, Haochong; Rong, Lu; Wang, Dayong; Li, Weihua; Deng, Qinghua; Li, Bin; Wang, Yunxin; Zhan, Zhiqiang; Wang, Xuemin; Wu, Weidong

    2016-01-20

    Terahertz digital holography is a combination of terahertz technology and digital holography. In digital holography, the imaging resolution is the key parameter in determining the detailed quality of a reconstructed wavefront. In this paper, the synthetic aperture method is used in terahertz digital holography and the in-line arrangement is built to perform the detection. The resolved capability of previous terahertz digital holographic systems restricts this technique to meet the requirement of practical detection. In contrast, the experimental resolved power of the present method can reach 125 μm, which is the best resolution of terahertz digital holography to date. Furthermore, the basic detection of a biological specimen is conducted to show the practical application. In all, the results of the proposed method demonstrate the enhancement of experimental imaging resolution and that the amplitude and phase distributions of the fine structure of samples can be reconstructed by using terahertz digital holography.

  1. Doping assessment in GaAs nanowires.

    PubMed

    Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

    2018-06-08

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  2. Doping assessment in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

    2018-06-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  3. Strong polarization-dependent terahertz modulation of aligned Ag nanowires on Si substrate.

    PubMed

    Lee, Gyuseok; Maeng, Inhee; Kang, Chul; Oh, Myoung-Kyu; Kee, Chul-Sik

    2018-05-14

    Optically tunable, strong polarization-dependent transmission of terahertz pulses through aligned Ag nanowires on a Si substrate is demonstrated. Terahertz pulses primarily pass through the Ag nanowires and the transmittance is weakly dependent on the angle between the direction of polarization of the terahertz pulse and the direction of nanowire alignment. However, the transmission of a terahertz pulse through optically excited materials strongly depends on the polarization direction. The extinction ratio increases as the power of the pumping laser increases. The enhanced polarization dependency is explained by the redistribution of photocarriers, which accelerates the sintering effect along the direction of alignment of the Ag nanowires. The photocarrier redistribution effect is examined by the enhancement of terahertz emission from the sample. Oblique metal nanowires on Si could be utilized for designing optically tunable terahertz polarization modulators.

  4. Quantized conductance observed during sintering of silver nanoparticles by intense terahertz pulses

    NASA Astrophysics Data System (ADS)

    Takano, Keisuke; Harada, Hirofumi; Yoshimura, Masashi; Nakajima, Makoto

    2018-04-01

    We show that silver nanoparticles, which are deposited on a terahertz-receiving antenna, can be sintered by intense terahertz pulse irradiation. The conductance of the silver nanoparticles between the antenna electrodes is measured under the terahertz pulse irradiation. The dispersant materials surrounding the nanoparticles are peeled off, and conduction paths are created. We reveal that, during sintering, quantum point contacts are formed, leading to quantized conductance between the electrodes with the conductance quantum, which reflects the formation of atomically thin wires. The terahertz electric pulses are sufficiently intense to activate electromigration, i.e., transfer of kinetic energy from the electrons to the silver atoms. The silver atoms move and atomically thin wires form under the intense terahertz pulse irradiation. These findings may inspire nanoscale structural processing by terahertz pulse irradiation.

  5. Anti-reflection coating design for metallic terahertz meta-materials.

    PubMed

    Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias; Hoffmann, Matthias C; Urazhdin, Sergei; Vavassori, Paolo; Bonetti, Stefano

    2018-02-05

    We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extended gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.

  6. Terahertz spectroscopy of liver cirrhosis: investigating the origin of contrast

    NASA Astrophysics Data System (ADS)

    Sy, Stanley; Huang, Shengyang; Wang, Yi-Xiang J.; Yu, Jun; Ahuja, Anil T.; Zhang, Yuan-ting; Pickwell-MacPherson, Emma

    2010-12-01

    We have previously demonstrated that terahertz pulsed imaging is able to distinguish between rat tissues from different healthy organs. In this paper we report our measurements of healthy and cirrhotic liver tissues using terahertz reflection spectroscopy. The water content of the fresh tissue samples was also measured in order to investigate the correlations between the terahertz properties, water content, structural changes and cirrhosis. Finally, the samples were fixed in formalin to determine whether water was the sole source of image contrast in this study. We found that the cirrhotic tissue had a higher water content and absorption coefficient than the normal tissue and that even after formalin fixing there were significant differences between the normal and cirrhotic tissues' terahertz properties. Our results show that terahertz pulsed imaging can distinguish between healthy and diseased tissue due to differences in absorption originating from both water content and tissue structure.

  7. Topological-insulator-based terahertz modulator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, X. B.; Cheng, L.; Wu, Y.

    Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5Sb 0:5Te 1:8Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applyingmore » a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.« less

  8. Topological-insulator-based terahertz modulator

    DOE PAGES

    Wang, X. B.; Cheng, L.; Wu, Y.; ...

    2017-10-18

    Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5Sb 0:5Te 1:8Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applyingmore » a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.« less

  9. Terahertz-driven linear electron acceleration

    PubMed Central

    Nanni, Emilio A.; Huang, Wenqian R.; Hong, Kyung-Han; Ravi, Koustuban; Fallahi, Arya; Moriena, Gustavo; Dwayne Miller, R. J.; Kärtner, Franz X.

    2015-01-01

    The cost, size and availability of electron accelerators are dominated by the achievable accelerating gradient. Conventional high-brightness radio-frequency accelerating structures operate with 30–50 MeV m−1 gradients. Electron accelerators driven with optical or infrared sources have demonstrated accelerating gradients orders of magnitude above that achievable with conventional radio-frequency structures. However, laser-driven wakefield accelerators require intense femtosecond sources and direct laser-driven accelerators suffer from low bunch charge, sub-micron tolerances and sub-femtosecond timing requirements due to the short wavelength of operation. Here we demonstrate linear acceleration of electrons with keV energy gain using optically generated terahertz pulses. Terahertz-driven accelerating structures enable high-gradient electron/proton accelerators with simple accelerating structures, high repetition rates and significant charge per bunch. These ultra-compact terahertz accelerators with extremely short electron bunches hold great potential to have a transformative impact for free electron lasers, linear colliders, ultrafast electron diffraction, X-ray science and medical therapy with X-rays and electron beams. PMID:26439410

  10. Terahertz-driven linear electron acceleration

    DOE PAGES

    Nanni, Emilio A.; Huang, Wenqian R.; Hong, Kyung-Han; ...

    2015-10-06

    The cost, size and availability of electron accelerators are dominated by the achievable accelerating gradient. Conventional high-brightness radio-frequency accelerating structures operate with 30–50 MeVm -1 gradients. Electron accelerators driven with optical or infrared sources have demonstrated accelerating gradients orders of magnitude above that achievable with conventional radio-frequency structures. However, laser-driven wakefield accelerators require intense femtosecond sources and direct laser-driven accelerators suffer from low bunch charge, sub-micron tolerances and sub-femtosecond timing requirements due to the short wavelength of operation. Here we demonstrate linear acceleration of electrons with keV energy gain using optically generated terahertz pulses. Terahertz-driven accelerating structures enable high-gradient electron/protonmore » accelerators with simple accelerating structures, high repetition rates and significant charge per bunch. As a result, these ultra-compact terahertz accelerators with extremely short electron bunches hold great potential to have a transformative impact for free electron lasers, linear colliders, ultrafast electron diffraction, X-ray science and medical therapy with X-rays and electron beams.« less

  11. Fabrication of photonic amorphous diamonds for terahertz-wave applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Komiyama, Yuichiro; Abe, Hiroyuki; Kamimura, Yasushi

    2016-05-09

    A recently proposed photonic bandgap material, named “photonic amorphous diamond” (PAD), was fabricated in a terahertz regime, and its terahertz-wave propagation properties were investigated. The PAD structure was fabricated from acrylic resin mixed with alumina powder, using laser lithographic, micro-additive manufacturing technique. After fabrication, the resulting structure was dewaxed and sintered. The formation of a photonic bandgap at around 0.45 THz was demonstrated by terahertz time-domain spectroscopy. Reflecting the disordered nature of the random network structure, diffusive terahertz-wave propagation was observed in the passbands; the scattering mean-free path decreased as the frequency approached the band edge. The mean-free paths evaluated atmore » the band edges were close to the Ioffe-Regel threshold value for wave localization.« less

  12. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  13. Telecom meets terahertz

    NASA Astrophysics Data System (ADS)

    Nikitin, Alexey Y.

    2018-01-01

    Excitation and gate tuning of terahertz plasmons in dual-layer graphene integrated into on-chip telecom photonic waveguides using infrared lasers has now been demonstrated. This may open the door to atomically thick optoelectronic devices for security, tomography or data processing.

  14. Terahertz emission from ultrafast ionizing air in symmetry-broken laser fields

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Yong; Glownia, James H.; Taylor, Antoinette J.; Rodriguez, George

    2007-04-01

    A transient photocurrent model is developed to explain coherent terahertz emission from air irradiated by a symmetry-broken laser field composed of the fundamental and its second harmonic laser pulses. When the total laser field is asymmetric across individual optical cycles, a nonvanishing electron current surge can arise during optical field ionization of air, emitting a terahertz electromagnetic pulse. Terahertz power scalability is also investigated, and with optical pump energy of tens of millijoules per pulse, peak terahertz field strengths in excess of 150 kV/cm are routinely produced.

  15. Terahertz emission from ultrafast ionizing air in symmetry-broken laser fields.

    PubMed

    Kim, Ki-Yong; Glownia, James H; Taylor, Antoinette J; Rodriguez, George

    2007-04-16

    A transient photocurrent model is developed to explain coherent terahertz emission from air irradiated by a symmetry-broken laser field composed of the fundamental and its second harmonic laser pulses. When the total laser field is asymmetric across individual optical cycles, a nonvanishing electron current surge can arise during optical field ionization of air, emitting a terahertz electromagnetic pulse. Terahertz power scalability is also investigated, and with optical pump energy of tens of millijoules per pulse, peak terahertz field strengths in excess of 150 kV/cm are routinely produced.

  16. Structure of high-index GaAs surfaces - the discovery of the stable GaAs(2511) surface

    NASA Astrophysics Data System (ADS)

    Jacobi, K.; Geelhaar, L.; Márquez, J.

    We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on recent progress in our own laboratory. By adapting a commercial scanning tunneling microscope (STM) to our molecular beam epitaxy and ultra high vacuum analysis chamber system, we have been able to atomically resolve the GaAs( {1} {1} {3})B(8 ×1), (114)Aα2(2×1), (137), (3715), and (2511) surface structures. In cooperation with P. Kratzer and M. Scheffler from the Theory Department of the Fritz-Haber Institute we determined the structure of some of these surfaces by comparing total-energy calculations and STM image simulations with the atomically resolved STM images. We present the results for the {112}, {113}, and {114} surfaces. Then we describe what led us to proceed into the inner parts of the stereographic triangle and to discover the hitherto unknown stable GaAs(2511) surface.

  17. Electrode pattern design for GaAs betavoltaic batteries

    NASA Astrophysics Data System (ADS)

    Haiyang, Chen; Jianhua, Yin; Darang, Li

    2011-08-01

    The sensitivities of betavoltaic batteries and photovoltaic batteries to series and parallel resistance are studied. Based on the study, an electrode pattern design principle of GaAs betavoltaic batteries is proposed. GaAs PIN junctions with and without the proposed electrode pattern are fabricated and measured under the illumination of 63Ni. Results show that the proposed electrode can reduce the backscattering and shadowing for the beta particles from 63Ni to increase the GaAs betavoltaic battery short circuit currents effectively but has little impact on the fill factors and ideal factors.

  18. GaAs core--shell nanowires for photovoltaic applications.

    PubMed

    Czaban, Josef A; Thompson, David A; LaPierre, Ray R

    2009-01-01

    We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.

  19. Controlled Terahertz Birefringence in Stretched Poly(lactic acid) Films Investigated by Terahertz Time-Domain Spectroscopy and Wide-Angle X-ray Scattering.

    PubMed

    Iwasaki, Hotsumi; Nakamura, Madoka; Komatsubara, Nozomu; Okano, Makoto; Nakasako, Masayoshi; Sato, Harumi; Watanabe, Shinichi

    2017-07-20

    We report a correlation between the dielectric property and structure of stretched poly(lactic acid) (PLA) films, revealed by polarization-sensitive terahertz time-domain spectroscopy and two-dimensional (2D) wide-angle X-ray scattering (WAXS). The experiments evidence that the dielectric function of the PLA film becomes more anisotropic with increasing draw ratio (DR). This behavior is explained by a classical Lorentz oscillator model assuming polarization-dependent absorption. The birefringence can be systematically altered from 0 to 0.13 by controlling DR. The combination of terahertz spectroscopy and 2D WAXS measurement reveals a clear correlation between the birefringence in the terahertz frequency domain and the degree of orientation of the PLA molecular chains. These findings imply that the birefringence is a result of the orientation of the PLA chains with anisotropic macromolecular vibration modes. Because of a good controllability of the birefringence, polymer-based materials will provide an attractive materials system for phase retarders in the terahertz frequency range.

  20. The potential of terahertz imaging for cancer diagnosis: A review of investigations to date.

    PubMed

    Yu, Calvin; Fan, Shuting; Sun, Yiwen; Pickwell-Macpherson, Emma

    2012-03-01

    The terahertz region lies between the microwave and infrared regions of the electromagnetic spectrum such that it is strongly attenuated by water and very sensitive to water content. Terahertz radiation has very low photon energy and thus it does not pose any ionization hazard for biological tissues. Because of these characteristic properties, there has been an increasing interest in terahertz imaging and spectroscopy for biological applications within the last few years and more and more terahertz spectra are being reported, including spectroscopic studies of cancer. The presence of cancer often causes increased blood supply to affected tissues and a local increase in tissue water content may be observed: this acts as a natural contrast mechanism for terahertz imaging of cancer. Furthermore the structural changes that occur in affected tissues have also been shown to contribute to terahertz image contrast. This paper introduces terahertz technology and provides a short review of recent advances in terahertz imaging and spectroscopy techniques. In particular investigations relating to the potential of terahertz imaging and spectroscopy for cancer diagnosis will be highlighted.

  1. The potential of terahertz imaging for cancer diagnosis: A review of investigations to date

    PubMed Central

    Yu, Calvin; Fan, Shuting; Sun, Yiwen; Pickwell-MacPherson, Emma

    2012-01-01

    The terahertz region lies between the microwave and infrared regions of the electromagnetic spectrum such that it is strongly attenuated by water and very sensitive to water content. Terahertz radiation has very low photon energy and thus it does not pose any ionization hazard for biological tissues. Because of these characteristic properties, there has been an increasing interest in terahertz imaging and spectroscopy for biological applications within the last few years and more and more terahertz spectra are being reported, including spectroscopic studies of cancer. The presence of cancer often causes increased blood supply to affected tissues and a local increase in tissue water content may be observed: this acts as a natural contrast mechanism for terahertz imaging of cancer. Furthermore the structural changes that occur in affected tissues have also been shown to contribute to terahertz image contrast. This paper introduces terahertz technology and provides a short review of recent advances in terahertz imaging and spectroscopy techniques. In particular investigations relating to the potential of terahertz imaging and spectroscopy for cancer diagnosis will be highlighted. PMID:23256057

  2. Industrial Applications of Terahertz Imaging

    NASA Astrophysics Data System (ADS)

    Zeitler, J. Axel; Shen, Yao-Chun

    This chapter gives a concise overview of potential industrial applications for terahertz imaging that have been reported over the past decade with a discussion of the major advantages and limitations of each approach. In the second half of the chapter we discuss in more detail how terahertz imaging can be used to investigate the microstructure of pharmaceutical dosage forms. A particular focus in this context is the nondestructive measurement of the coating thickness of polymer coated tablets, both by means of high resolution offline imaging in research and development as well as for in-line quality control during production.

  3. Simulation and analysis of atmospheric transmission performance in airborne Terahertz communication

    NASA Astrophysics Data System (ADS)

    Pan, Chengsheng; Shi, Xin; Liu, Chengyang; Wang, Xue; Ding, Yuanming

    2018-02-01

    For the special meteorological condition of high altitude transmission; first the influence of atmospheric turbulence on the Terahertz wireless communication is analyzed, and the atmospheric constants model with increase in height is given. On this basis, the relationship between the flicker index and the high altitude horizon transmission distance of the Terahertz wave is analyzed by simulation. Then, through the analysis of high altitude path loss and noise, the high altitude wireless link model is built. Finally, the link loss budget is given according to the current Terahertz device parameters, and bit error rate (BER) performance of on-off keyed modulation (OOK) and pulse position modulation (PPM) in four Terahertz frequency bands is compared and analyzed. All these above provided theoretical reference for high-altitude Terahertz wireless communication transmission.

  4. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Srivastava, Vishwas; Liu, Wenyong; Janke, Eric M.

    2017-02-22

    Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novelmore » molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.« less

  5. Terahertz spectroscopic investigations of leather in terahertz wave range

    NASA Astrophysics Data System (ADS)

    Song, Mei-jing; Li, Jiu-sheng

    2012-03-01

    Pulsed THz time-domain spectroscopy is a coherent technique, in which both the amplitude and the phase of a THz pulse are measured. Recently, material characterization using THz spectroscopy has been applied to biochemicals, pharmaceuticals, polymers and semiconductors and has given us important information. Moreover, THz imaging has progressed and is expected to be applicable for the identification of narcotics and explosives. The most important and characteristic point of THz spectroscopy is said to be its ability to observe intermolecular vibrations in contrast to infrared spectroscopy (IR), which observes intramolecular vibrations. Coherent detection enables direct calculations of both the imaginary and the real parts of the refractive index without using the Kramers-Kronig relations. Terahertz wave spectroscopy has been used to study the properties and absorption spectra characteristic of materials. In this paper, the spectral characteristics of cow skin, pig skin sheep skin, horse skin and deer skin have been measured with terahertz time-domain spectroscopy in the range of 0.1~2.0THz. The results show that THz-TDS technology provides an important tool for quality analysis and detection of leathers.

  6. Robust terahertz self-heterodyne system using a phase noise compensation technique.

    PubMed

    Song, Hajun; Song, Jong-In

    2015-08-10

    We propose and demonstrate a robust terahertz self-heterodyne system using a phase noise compensation technique. Conventional terahertz self-heterodyne systems suffer from degraded phase noise performance due to phase noise of the laser sources. The proposed phase noise compensation technique uses an additional photodiode and a simple electric circuit to produce phase noise identical to that observed in the terahertz signal produced by the self-heterodyne system. The phase noise is subsequently subtracted from the terahertz signal produced by the self-heterodyne system using a lock-in amplifier. While the terahertz self-heterodyne system using a phase noise compensation technique offers improved phase noise performance, it also provides a reduced phase drift against ambient temperature variations. The terahertz self-heterodyne system using a phase noise compensation technique shows a phase noise of 0.67 degree in terms of a standard deviation value even without using overall delay balance control. It also shows a phase drift of as small as approximately 10 degrees in an open-to-air measurement condition without any strict temperature control.

  7. A High-Power Broadband Terahertz Source Enabled by Three-Dimensional Light Confinement in a Plasmonic Nanocavity.

    PubMed

    Yardimci, Nezih Tolga; Cakmakyapan, Semih; Hemmati, Soroosh; Jarrahi, Mona

    2017-06-23

    The scope and potential uses of time-domain terahertz imaging and spectroscopy are mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive terahertz sources. State-of-the-art photoconductive sources utilize short-carrier-lifetime semiconductors to recombine carriers that cannot contribute to efficient terahertz generation and cause additional thermal dissipation. Here, we present a novel photoconductive terahertz source that offers a significantly higher efficiency compared with terahertz sources fabricated on short-carrier-lifetime substrates. The key innovative feature of this source is the tight three-dimensional confinement of the optical pump beam around the terahertz nanoantennas that are used as radiating elements. This is achieved by means of a nanocavity formed by plasmonic structures and a distributed Bragg reflector. Consequently, almost all of the photo-generated carriers can be routed to the terahertz nanoantennas within a sub-picosecond time-scale. This results in a very strong, ultrafast current that drives the nanoantennas to produce broadband terahertz radiation. We experimentally demonstrate that this terahertz source can generate 4 mW pulsed terahertz radiation under an optical pump power of 720 mW over the 0.1-4 THz frequency range. This is the highest reported power level for terahertz radiation from a photoconductive terahertz source, representing more than an order of magnitude of enhancement in the optical-to-terahertz conversion efficiency compared with state-of-the-art photoconductive terahertz sources fabricated on short-carrier-lifetime substrates.

  8. A High-Power Broadband Terahertz Source Enabled by Three-Dimensional Light Confinement in a Plasmonic Nanocavity

    DOE PAGES

    Yardimci, Nezih Tolga; Cakmakyapan, Semih; Hemmati, Soroosh; ...

    2017-06-23

    The scope and potential uses of time-domain terahertz imaging and spectroscopy are mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive terahertz sources. State-of-theart photoconductive sources utilize short-carrier-lifetime semiconductors to recombine carriers that cannot contribute to efficient terahertz generation and cause additional thermal dissipation. Here, we present a novel photoconductive terahertz source that offers a significantly higher efficiency compared with terahertz sources fabricated on short-carrier-lifetime substrates. The key innovative feature of this source is the tight three-dimensional confinement of the optical pump beam around the terahertz nanoantennas that are used as radiating elements. This is achieved by means ofmore » a nanocavity formed by plasmonic structures and a distributed Bragg reflector. Consequently, almost all of the photo-generated carriers can be routed to the terahertz nanoantennas within a sub-picosecond time-scale. This results in a very strong, ultrafast current that drives the nanoantennas to produce broadband terahertz radiation. We experimentally demonstrate that this terahertz source can generate 4 mW pulsed terahertz radiation under an optical pump power of 720 mW over the 0.1–4 THz frequency range. This is the highest reported power level for terahertz radiation from a photoconductive terahertz source, representing more than an order of magnitude of enhancement in the optical-to-terahertz conversion efficiency compared with state-of-the-art photoconductive terahertz sources fabricated on shortcarrier- lifetime substrates.« less

  9. GaAs homojunction solar cell development

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Swartz, C. K.; Hart, R. E., Jr.

    1980-01-01

    The Lincoln Laboratory n(+)/p/p(+) GaAs shallow homojunction cell structure was successfully demonstrated on 2 by 2 cm GaAs substrates. Air mass zero efficiencies of the seven cells produced to date range from 13.6 to 15.6 percent. Current voltage (I-V) characteristics, spectral response, and measurements were made on all seven cells. Preliminary analysis of 1 MeV electron radiation damage data indicate excellent radiation resistance for these cells.

  10. An effective way to reduce water absorption to terahertz

    NASA Astrophysics Data System (ADS)

    Wu, Yaxiong; Su, Bo; He, Jingsuo; Zhang, Cong; Zhang, Hongfei; Zhang, Shengbo; Zhang, Cunlin

    2018-01-01

    Since many vibrations and rotational levels of biomolecules fall within the THz band, THz spectroscopy can be used to identify biological samples. In addition, most biomolecules need to maintain their biological activity in a liquid environment, but water as polar substance has strong absorption to the THz wave. Thus, it is difficult to detect the sample information in aqueous solution using THz wave. In order to prevent the information of biological samples were masked in the solution, many research methods were used to explore how to reduce the water absorption of terahertz. In this paper, we have developed a real-time chemical methodology through transmission Terahertz time-domain spectroscopy (THz-TDS) system. The material of Zeonor 1020r is used as substrate and cover plate, and PDMS as channel interlayer. The transmission of the empty microfluidic chip is more than 80% in the range of 0.2-2.6 THz by THz-TDS system. Then, experiments were carried out using chips, which were filled with different volumes of 1, 2- propanediol, and it has been proved that the microfluidic chip could reduce the water absorption of terahertz. Finally, in order to further explore the reduction of terahertz to water absorption, we inject different concentrations of electrolyte to the chip. The results show that with the addition of different electrolytes, terahertz transmission line has evident changes. It can be taken into account that the electrolyte has different effects about the hydrogen bonds in the aqueous solution. Some of them can promote water molecules clusters, while others destroy them. Based on the basis of microfluidic chip, the discovery of this phenomenon can provide a way that reduces water absorption of terahertz. This work has laid a solid foundation for the subsequent study in reducing water absorption of terahertz.

  11. Anti-reflection coating design for metallic terahertz meta-materials

    DOE PAGES

    Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias; ...

    2018-01-26

    We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extendedmore » gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.« less

  12. Anti-reflection coating design for metallic terahertz meta-materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pancaldi, Matteo; Freeman, Ryan; Hudl, Matthias

    We demonstrate a silicon-based, single-layer anti-reflection coating that suppresses the reflectivity of metals at near-infrared frequencies, enabling optical probing of nano-scale structures embedded in highly reflective surroundings. Our design does not affect the interaction of terahertz radiation with metallic structures that can be used to achieve terahertz near-field enhancement. We have verified the functionality of the design by calculating and measuring the reflectivity of both infrared and terahertz radiation from a silicon/gold double layer as a function of the silicon thickness. We have also fabricated the unit cell of a terahertz meta-material, a dipole antenna comprising two 20-nm thick extendedmore » gold plates separated by a 2 μm gap, where the terahertz field is locally enhanced. We used the time-domain finite element method to demonstrate that such near-field enhancement is preserved in the presence of the anti-reflection coating. Finally, we performed magneto-optical Kerr effect measurements on a single 3-nm thick, 1-μm wide magnetic wire placed in the gap of such a dipole antenna. The wire only occupies 2% of the area probed by the laser beam, but its magneto-optical response can be clearly detected. Our design paves the way for ultrafast time-resolved studies, using table-top femtosecond near-infrared lasers, of dynamics in nano-structures driven by strong terahertz radiation.« less

  13. Terahertz Absorption by Cellulose: Application to Ancient Paper Artifacts

    NASA Astrophysics Data System (ADS)

    Peccianti, M.; Fastampa, R.; Mosca Conte, A.; Pulci, O.; Violante, C.; Łojewska, J.; Clerici, M.; Morandotti, R.; Missori, M.

    2017-06-01

    Artifacts made of cellulose, such as ancient documents, pose a significant experimental challenge in the terahertz transmission spectra interpretation due to their small optical thickness. In this paper, we describe a method to recover the complex refractive index of cellulose fibers from the terahertz transmission data obtained on single freely standing paper sheets in the (0.2-3.5)-THz range. By using our technique, we eliminate Fabry-Perot effects and recover the absorption coefficient of the cellulose fibers. The obtained terahertz absorption spectra are explained in terms of absorption peaks of the cellulose crystalline phase superimposed to a background contribution due to a disordered hydrogen-bond network. The comparison between the experimental spectra with terahertz vibrational properties simulated by density-functional-theory calculations confirms this interpretation. In addition, evident changes in the terahertz absorption spectra are produced by natural and artificial aging on paper samples, whose final stage is characterized by a spectral profile with only two peaks at about 2.1 and 3.1 THz. These results can be used to provide a quantitative assessment of the state of preservation of cellulose artifacts.

  14. Development of terahertz laser diagnostics for electron density measurements.

    PubMed

    Kawahata, K; Akiyama, T; Tanaka, K; Nakayama, K; Okajima, S

    2008-10-01

    A two color laser interferometer using terahertz laser sources is under development for high performance operation on the large helical device and for future burning plasma experiments such as ITER. Through investigation of terahertz laser sources, we have achieved high power simultaneous oscillations at 57.2 and 47.6 microm of a CH(3)OD laser pumped by a cw 9R(8) CO(2) laser line. The laser wavelength around 50 microm is the optimum value for future fusion devices from the consideration of the beam refraction effect and signal-to-noise ratio for an expected phase shift due to plasma. In this article, recent progress of the terahertz laser diagnostics, especially in mechanical vibration compensation by using a two color laser operation and terahertz laser beam transmission through a dielectric waveguide, will be presented.

  15. Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles

    NASA Astrophysics Data System (ADS)

    de Julián Fernández, C.; Mattei, G.; Paz, E.; Novak, R. L.; Cavigli, L.; Bogani, L.; Palomares, F. J.; Mazzoldi, P.; Caneschi, A.

    2010-04-01

    Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO2 matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

  16. Coupling between magnetic and optical properties of stable Au-Fe solid solution nanoparticles.

    PubMed

    de Julián Fernández, C; Mattei, G; Paz, E; Novak, R L; Cavigli, L; Bogani, L; Palomares, F J; Mazzoldi, P; Caneschi, A

    2010-04-23

    Au-Fe nanoparticles constitute one of the simplest prototypes of a multifunctional nanomaterial that can exhibit both magnetic and optical (plasmonic) properties. This solid solution, not feasible in the bulk phase diagram in thermal equilibrium, can be formed as a nanostructure by out-of-equilibrium processes. Here, the novel magnetic, optical and magneto-optical properties of ion-implanted Au-Fe solid solution nanoparticles dispersed in a SiO(2) matrix are investigated and correlated. The surface plasmon resonance of the Au-Fe nanoparticles with almost equicomposition is strongly damped when compared to pure Au and to Au-rich Au-Fe nanoparticles. In all cases, the Au atoms are magnetically polarized, as measured by x-ray magnetic circular dichroism, and ferromagnetically coupled with Fe atoms. Although the chemical stability of Au-Fe nanoparticles is larger than that of Fe nanoparticles, both the magnetic moment per Fe atom and the order temperature are smaller. These results suggest that electronic and magnetic properties are more influenced by the hybridization of the electronic bands in the Au-Fe solid solution than by size effects. On the other hand, the magneto-optical transitions allowed in the vis-nIR spectral regions are very similar. In addition, we also observe, after studying the properties of thermally treated samples, that the Au-Fe alloy is stabilized, not by surface effects, but by the combination of the out-of-equilibrium nature of the ion implantation technique and by changes in the properties due to size effects.

  17. Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

    NASA Astrophysics Data System (ADS)

    Madan, Jaya; Chaujar, Rishu

    2017-02-01

    This work integrates the merits of gate-drain underlapping (GDU) and N+ source pocket on cylindrical gate all around tunnel FET (GAA-TFET) to form GDU-PNIN-GAA-TFET. It is analysed that the source pocket located at the source-channel junction narrows the tunneling barrier width at the tunneling junction and thereby enhances the ON-state current of GAA-TFET. Further, it is obtained that the GDU resists the extension of carrier density (built-up under the gated region) towards the drain side (under the underlapped length), thereby suppressing the ambipolar current and reducing the parasitic capacitances of GAA-TFET. Consequently, the amalgamated merits of both engineering schemes are obtained in GDU-PNIN-GAA-TFET that thus conquers the greatest challenges faced by TFET. Thus, GDU-PNIN-GAA-TFET results in an up-gradation in the overall performance of GAA-TFET. Moreover, it is realised that the RF figure of merits FOMs such as cut-off frequency (fT) and maximum oscillation frequency (fMAX) are also considerably improved with integration of source pocket on GAA-TFET. Thus, the improved analog and RF performance of GDU-PNIN-GAA-TFET makes it ideal for low power and high-speed applications.

  18. Damage in a Thin Metal Film by High-Power Terahertz Radiation.

    PubMed

    Agranat, M B; Chefonov, O V; Ovchinnikov, A V; Ashitkov, S I; Fortov, V E; Kondratenko, P S

    2018-02-23

    We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

  19. Damage in a Thin Metal Film by High-Power Terahertz Radiation

    NASA Astrophysics Data System (ADS)

    Agranat, M. B.; Chefonov, O. V.; Ovchinnikov, A. V.; Ashitkov, S. I.; Fortov, V. E.; Kondratenko, P. S.

    2018-02-01

    We report on the experimental observation of high-power terahertz-radiation-induced damage in a thin aluminum film with a thickness less than a terahertz skin depth. Damage in a thin metal film produced by a single terahertz pulse is observed for the first time. The damage mechanism induced by a single terahertz pulse could be attributed to thermal expansion of the film causing debonding of the film from the substrate, film cracking, and ablation. The damage pattern induced by multiple terahertz pulses at fluences below the damage threshold is quite different from that observed in single-pulse experiments. The observed damage pattern resembles an array of microcracks elongated perpendicular to the in-plane field direction. A mechanism related to microcracks' generation and based on a new phenomenon of electrostriction in thin metal films is proposed.

  20. Cascaded second-order processes for the efficient generation of narrowband terahertz radiation

    NASA Astrophysics Data System (ADS)

    Cirmi, Giovanni; Hemmer, Michael; Ravi, Koustuban; Reichert, Fabian; Zapata, Luis E.; Calendron, Anne-Laure; Çankaya, Hüseyin; Ahr, Frederike; Mücke, Oliver D.; Matlis, Nicholas H.; Kärtner, Franz X.

    2017-02-01

    The generation of high-energy narrowband terahertz radiation has gained heightened importance in recent years due to its potentially transformative impact on spectroscopy, high-resolution radar and more recently electron acceleration. Among various applications, such terahertz radiation is particularly important for table-top free electron lasers, which are at the moment a subject of extensive research. Second-order nonlinear optical methods are among the most promising techniques to achieve the required coherent radiation with energy > 10 mJ, peak field > 100 MV m-1, and frequency between 0.1 and 1 THz. However, they are conventionally thought to suffer from low efficiencies < ˜10-3, due to the high ratio between optical and terahertz photon energies, in what is known as the Manley-Rowe limitation. In this paper, we review the current second-order nonlinear optical methods for the generation of narrowband terahertz radiation. We explain how to employ spectral cascading to increase the efficiency beyond the Manley-Rowe limit and describe the first experimental results in the direction of a terahertz-cascaded optical parametric amplifier, a novel technique which promises to fully exploit spectral cascading to generate narrowband terahertz radiation with few percent optical-to-terahertz conversion efficiency.

  1. Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

    1982-01-01

    Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  3. Sub-cycle control of terahertz high-harmonic generation by dynamical Bloch oscillations

    NASA Astrophysics Data System (ADS)

    Schubert, O.; Hohenleutner, M.; Langer, F.; Urbanek, B.; Lange, C.; Huttner, U.; Golde, D.; Meier, T.; Kira, M.; Koch, S. W.; Huber, R.

    2014-02-01

    Ultrafast charge transport in strongly biased semiconductors is at the heart of high-speed electronics, electro-optics and fundamental solid-state physics. Intense light pulses in the terahertz spectral range have opened fascinating vistas. Because terahertz photon energies are far below typical electronic interband resonances, a stable electromagnetic waveform may serve as a precisely adjustable bias. Novel quantum phenomena have been anticipated for terahertz amplitudes, reaching atomic field strengths. We exploit controlled (multi-)terahertz waveforms with peak fields of 72 MV cm-1 to drive coherent interband polarization combined with dynamical Bloch oscillations in semiconducting gallium selenide. These dynamics entail the emission of phase-stable high-harmonic transients, covering the entire terahertz-to-visible spectral domain between 0.1 and 675 THz. Quantum interference of different ionization paths of accelerated charge carriers is controlled via the waveform of the driving field and explained by a quantum theory of inter- and intraband dynamics. Our results pave the way towards all-coherent terahertz-rate electronics.

  4. Low-Loss Waveguides for Terahertz Frequencies

    NASA Technical Reports Server (NTRS)

    Siegel, Peter; Yeh, Cavour; Shimabukuro, Fred; Fraser, Scott

    2008-01-01

    Hollow-core, periodic bandgap (HCPBG) flexible waveguides have been proposed as a means of low-loss transmission of electromagnetic signals in the frequency range from about 300 GHz to 30 THz. This frequency range has been called the "terahertz gap" because it has been little utilized: Heretofore, there has been no way of low-loss guiding of terahertz beams other than by use of fixed-path optical beam guides with lenses and mirrors or multimode waveguides that cannot maintain mode purity around bends or modest discontinuities.

  5. A multimode terahertz-Orotron with the special Smith–Purcell radiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Weihao, E-mail: liuwhao@ustc.edu.cn; Lu, Yalin; Wang, Lin

    2016-05-02

    We proposed and investigated a terahertz Orotron, which is based on the recently revealed special Smith–Purcell radiation. It overcomes the main obstacles of the traditional Orotron in the terahertz region—unreachable high starting-current-density and low radiation power. With the experimentally available electron beam and facilities, its average output power can reach hundreds of milliwatts and even several watts in terahertz region, which is many orders of magnitude higher than that of the traditional Orotron. Additionally, it can be controlled to operate in ether the first or the second order mode, and the radiation frequency can extend from 0.1 THz to 1more » THz. These remarkable advantages make it a promising terahertz source for practical applications.« less

  6. Panel fabrication utilizing GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  7. Terahertz quantum cascade laser with an X-valley-based injector

    NASA Astrophysics Data System (ADS)

    Roy, Mithun; Talukder, Muhammad Anisuzzaman

    2017-04-01

    We present a novel terahertz (THz) quantum cascade laser (QCL) design where Γ-valley states are used for lasing transition and X-valley states—in particular, Xz-states—are used as injector subbands. Since the lasing states in our proposed structure are populated and depopulated mainly through the interface roughness assisted Γ-Xz electron scattering, we present a model to describe this intervalley carrier transport. In the injector region of the proposed THz QCL, we use a quaternary AlGaAsP material to introduce tensile strain, which plays a crucial role in increasing the gain. To compensate the strain per period, we propose to grow the periodic heterostructure on a GaAs 0.94 P 0.06 virtual substrate. To simulate the carrier transport and hence calculate the gain and lasing performance of the proposed THz QCL, we use a simplified density matrix formalism that considers resonant tunneling, dephasing, and the important intersubband scattering mechanisms. Since electron temperature significantly varies from lattice temperature for QCLs, we take their difference into account using the kinetic energy balance method. We show that the proposed structure is capable of lasing up to a maximum lattice temperature of ˜119 K at 4.8 THz. For future improvements of the device, we identify major performance-degrading factors of the proposed design.

  8. Glassy dynamics of sorbitol solutions at terahertz frequencies.

    PubMed

    Sibik, Juraj; Shalaev, Evgenyi Y; Zeitler, J Axel

    2013-07-28

    The absorption spectra of D-sorbitol and a range of its concentrated aqueous solutions were studied by terahertz spectroscopy over the temperature interval of 80 K < T < 310 K. It is shown that the slow-down of molecules at around the glass transition temperature, Tg, dramatically influences the thermal dependence of the absorption at terahertz frequencies. Furthermore, two different absorption regimes are revealed below Tg: at temperatures well below Tg, the absorption resembles the coupling of terahertz radiation to the vibrational density of states (VDOS); above these temperatures, between 160 K and Tg, in the sample of pure sorbitol and the sample of a solution of 70 wt% sorbitol in water, another type of absorption is observed at terahertz frequencies. Several possibilities of the physical origin of this absorption are discussed and based on the experimental data this process is tentatively assigned to the Johari-Goldstein β-relaxation processes shifting to lower frequencies at temperatures below Tg leaving behind a spectrum largely dominated by losses into the VDOS.

  9. Terahertz Computed Tomography of NASA Thermal Protection System Materials

    NASA Technical Reports Server (NTRS)

    Roth, D. J.; Reyes-Rodriguez, S.; Zimdars, D. A.; Rauser, R. W.; Ussery, W. W.

    2011-01-01

    A terahertz axial computed tomography system has been developed that uses time domain measurements in order to form cross-sectional image slices and three-dimensional volume renderings of terahertz-transparent materials. The system can inspect samples as large as 0.0283 cubic meters (1 cubic foot) with no safety concerns as for x-ray computed tomography. In this study, the system is evaluated for its ability to detect and characterize flat bottom holes, drilled holes, and embedded voids in foam materials utilized as thermal protection on the external fuel tanks for the Space Shuttle. X-ray micro-computed tomography was also performed on the samples to compare against the terahertz computed tomography results and better define embedded voids. Limits of detectability based on depth and size for the samples used in this study are loosely defined. Image sharpness and morphology characterization ability for terahertz computed tomography are qualitatively described.

  10. Broadly tunable terahertz generation in mid-infrared quantum cascade lasers.

    PubMed

    Vijayraghavan, Karun; Jiang, Yifan; Jang, Min; Jiang, Aiting; Choutagunta, Karthik; Vizbaras, Augustinas; Demmerle, Frederic; Boehm, Gerhard; Amann, Markus C; Belkin, Mikhail A

    2013-01-01

    Room temperature, broadly tunable, electrically pumped semiconductor sources in the terahertz spectral range, similar in operation simplicity to diode lasers, are highly desired for applications. An emerging technology in this area are sources based on intracavity difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers. Here we report terahertz quantum cascade laser sources based on an optimized non-collinear Cherenkov difference-frequency generation scheme that demonstrates dramatic improvements in performance. Devices emitting at 4 THz display a mid-infrared-to-terahertz conversion efficiency in excess of 0.6 mW W(-2) and provide nearly 0.12 mW of peak power output. Devices emitting at 2 and 3 THz fabricated on the same chip display 0.09 and 0.4 mW W(-2) conversion efficiencies at room temperature, respectively. High terahertz-generation efficiency and relaxed phase-matching conditions offered by the Cherenkov scheme allowed us to demonstrate, for the first time, an external-cavity terahertz quantum cascade laser source tunable between 1.70 and 5.25 THz.

  11. Development of the GaAs-based THz Photoconductor and Balloon-borne Experiment Module TG-ZERO

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaroh; Kataza, Hirokazu; Wada, Takehiko; Murakami, Hiroshi; Kamizuka, Takafumi; Makitsubo, Hironobu; Yamashita, Kyohei; Wakaki, Moriaki; Abe, Osamu

    2009-08-01

    The far-infrared (around 1 terahertz (THz)) extrinsic photoconductor is fabricated by a LPE-grown GaAs semiconductor. This GaAs detector can detect longer wavelength photons than the stressed Ge:Ga conventionally used for astronomical infrared observation. We applied the liquid phase epitaxy to obtain a suitable purity of GaAs crystals, and the test N-GaAs photoconductor device shows spectroscopic response over a wide wavelength range of 150-300 micron. The best sample shows 30 A/W of responsivity and 10-16 W/Hz0.5 of NEP is expected at 295 micron of wavelength and T = 1.6 K. In addition, we constructed the terahertz photometer module (TG-ZERO) using our N-GaAs photoconductors. TG-ZERO has four channel bands with N-GaAs and Ge:Ga photoconductors. The development process, the result of experiments, and the basic specifications of TG-ZERO are all reported in this paper.

  12. Screening mail for powders using terahertz technology

    NASA Astrophysics Data System (ADS)

    Kemp, Mike

    2011-11-01

    Following the 2001 Anthrax letter attacks in the USA, there has been a continuing interest in techniques that can detect or identify so-called 'white powder' concealed in envelopes. Electromagnetic waves (wavelengths 100-500 μm) in the terahertz frequency range penetrate paper and have short enough wavelengths to provide good resolution images; some materials also have spectroscopic signatures in the terahertz region. We report on an experimental study into the use of terahertz imaging and spectroscopy for mail screening. Spectroscopic signatures of target powders were measured and, using a specially designed test rig, a number of imaging methods based on reflection, transmission and scattering were investigated. It was found that, contrary to some previous reports, bacterial spores do not appear to have any strong spectroscopic signatures which would enable them to be identified. Imaging techniques based on reflection imaging and scattering are ineffective in this application, due to the similarities in optical properties between powders of interest and paper. However, transmission imaging using time-of-flight of terahertz pulses was found to be a very simple and sensitive method of detecting small quantities (25 mg) of powder, even in quite thick envelopes. An initial feasibility study indicates that this method could be used as the basis of a practical mail screening system.

  13. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  14. Comparisons of single event vulnerability of GaAs SRAMS

    NASA Astrophysics Data System (ADS)

    Weatherford, T. R.; Hauser, J. R.; Diehl, S. E.

    1986-12-01

    A GaAs MESFET/JFET model incorporated into SPICE has been used to accurately describe C-EJFET, E/D MESFET and D MESFET/resistor GaAs memory technologies. These cells have been evaluated for critical charges due to gate-to-drain and drain-to-source charge collection. Low gate-to-drain critical charges limit conventional GaAs SRAM soft error rates to approximately 1E-6 errors/bit-day. SEU hardening approaches including decoupling resistors, diodes, and FETs have been investigated. Results predict GaAs RAM cell critical charges can be increased to over 0.1 pC. Soft error rates in such hardened memories may approach 1E-7 errors/bit-day without significantly reducing memory speed. Tradeoffs between hardening level, performance and fabrication complexity are discussed.

  15. Frequency-division multiplexer and demultiplexer for terahertz wireless links.

    PubMed

    Ma, Jianjun; Karl, Nicholas J; Bretin, Sara; Ducournau, Guillaume; Mittleman, Daniel M

    2017-09-28

    The development of components for terahertz wireless communications networks has become an active and growing research field. However, in most cases these components have been studied using a continuous or broadband-pulsed terahertz source, not using a modulated data stream. This limitation may mask important aspects of the performance of the device in a realistic system configuration. We report the characterization of one such device, a frequency multiplexer, using modulated data at rates up to 10 gigabits per second. We also demonstrate simultaneous error-free transmission of two signals at different carrier frequencies, with an aggregate data rate of 50 gigabits per second. We observe that the far-field spatial variation of the bit error rate is different from that of the emitted power, due to a small nonuniformity in the angular detection sensitivity. This is likely to be a common feature of any terahertz communication system in which signals propagate as diffracting beams not omnidirectional broadcasts.There is growing interest in the development of components to facilitate wireless communications in the terahertz but the characterization of these systems involve an unmodulated input. Here the authors demonstrate multiplexing and demultiplexing of data streams in the terahertz range using a real data link.

  16. Prediction of dislocation generation during Bridgman growth of GaAs crystals

    NASA Technical Reports Server (NTRS)

    Tsai, C. T.; Yao, M. W.; Chait, Arnon

    1992-01-01

    Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

  17. Prediction of dislocation generation during Bridgman growth of GaAs crystals

    NASA Astrophysics Data System (ADS)

    Tsai, C. T.; Yao, M. W.; Chait, Arnon

    1992-11-01

    Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

  18. A simple system for 160GHz optical terahertz wave generation and data modulation

    NASA Astrophysics Data System (ADS)

    Li, Yihan; He, Jingsuo; Sun, Xueming; Shi, Zexia; Wang, Ruike; Cui, Hailin; Su, Bo; Zhang, Cunlin

    2018-01-01

    A simple system based on two cascaded Mach-Zehnder modulators, which can generate 160GHz optical terahertz waves from 40GHz microwave sources, is simulated and tested in this paper. Fiber grating filter is used in the system to filter out optical carrier. By properly adjusting the modulator DC bias voltages and the signal voltages and phases, 4-tupling optical terahertz wave can be generated with fiber grating. This notch fiber grating filter is greatly suitable for terahertz over fiber (TOF) communication system. This scheme greatly reduces the cost of long-distance terahertz communication. Furthermore, 10Gbps digital signal is modulated in the 160GHz optical terahertz wave.

  19. Terahertz source requirements for molecular spectroscopy

    NASA Astrophysics Data System (ADS)

    De Lucia, Frank C.; Goyette, Thomas M.

    1994-06-01

    Molecular spectroscopy was the earliest application in the terahertz spectral region and remains one of the most important. With the development of modern technology, spectroscopy has expanded beyond the laboratory and is the basis for a number of important remote sensing systems, especially in atmospheric science and studies of the interstellar medium. Concurrently, these spectroscopic applications have been one of the prime motivators for the development of terahertz technology. This paper will review these issues in the context of the requirements placed on future technology developments by spectroscopic applications.

  20. Terahertz source requirements for molecular spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    De Lucia, F.C.; Goyette, T.M.

    1994-12-31

    Molecular spectroscopy was the earliest application in the terahertz spectral region and remains one of the most important. With the development of modern technology, spectroscopy has expanded beyond the laboratory and is the basis for a number of important remote sensing systems, especially in atmospheric science and studies of the interstellar medium. Concurrently, these spectroscopic applications have been one of the prime motivators for the development of terahertz technology. This paper will review these issues in the context of the requirements placed on future technology developments by spectroscopic applications.

  1. FDTD-based quantitative analysis of terahertz wave detection for multilayered structures.

    PubMed

    Tu, Wanli; Zhong, Shuncong; Shen, Yaochun; Zhou, Qing; Yao, Ligang

    2014-10-01

    Experimental investigations have shown that terahertz pulsed imaging (TPI) is able to quantitatively characterize a range of multilayered media (e.g., biological issues, pharmaceutical tablet coatings, layered polymer composites, etc.). Advanced modeling of the interaction of terahertz radiation with a multilayered medium is required to enable the wide application of terahertz technology in a number of emerging fields, including nondestructive testing. Indeed, there have already been many theoretical analyses performed on the propagation of terahertz radiation in various multilayered media. However, to date, most of these studies used 1D or 2D models, and the dispersive nature of the dielectric layers was not considered or was simplified. In the present work, the theoretical framework of using terahertz waves for the quantitative characterization of multilayered media was established. A 3D model based on the finite difference time domain (FDTD) method is proposed. A batch of pharmaceutical tablets with a single coating layer of different coating thicknesses and different refractive indices was modeled. The reflected terahertz wave from such a sample was computed using the FDTD method, assuming that the incident terahertz wave is broadband, covering a frequency range up to 3.5 THz. The simulated results for all of the pharmaceutical-coated tablets considered were found to be in good agreement with the experimental results obtained using a commercial TPI system. In addition, we studied a three-layered medium to mimic the occurrence of defects in the sample.

  2. Compact Solid State Terahertz Detectors

    DTIC Science & Technology

    2007-07-09

    We think that the noise in our Be doped GaAs quantum well structures is of the shot noise origin as in conventional GaAs QWIPs designed for mid...University of Leeds as follows: Within the frame of this project attention will be focussed on the low-frequency noise of the proposed devices. More...specifically, the Johnson and shot noise , as well as 1/f noise spectra, will be measured at various temperatures from 4 K up to 300 K. The figure

  3. Terahertz-visible two-photon rotational spectroscopy of cold OD-

    NASA Astrophysics Data System (ADS)

    Lee, Seunghyun; Hauser, Daniel; Lakhmanskaya, Olga; Spieler, Steffen; Endres, Eric S.; Geistlinger, Katharina; Kumar, Sunil S.; Wester, Roland

    2016-03-01

    We present a method to measure rotational transitions of molecular anions in the terahertz domain by sequential two-photon absorption. Ion excitation by bound-bound terahertz absorption is probed by absorption in the visible on a bound-free transition. The visible frequency is tuned to a state-selective photodetachment transition of the excited anions. This provides a terahertz action spectrum for just a few hundred molecular ions. To demonstrate this we measure the two lowest rotational transitions, J =1 ←0 and J =2 ←1 of OD- anions in a cryogenic 22-pole trap. We obtain rotational transition frequencies of 598 596.08(19) MHz for J =1 ←0 and 1 196 791.57(27) MHz for J =2 ←1 of OD-, in good agreement with their only previous measurement. This two-photon scheme opens up terahertz rovibrational spectroscopy for a range of molecular anions, in particular for polyatomic and cluster anions.

  4. Applications of terahertz-pulsed technology in the pharmaceutical industry

    NASA Astrophysics Data System (ADS)

    Taday, Philip F.

    2010-02-01

    Coatings are applied to pharmaceutical tablets (or pills) to for either cosmetic or release control reasons. Cosmetic coatings control the colour or to mask the taste of an active ingredient; the thickness of these coating is not critical to the performance of the product. On the other hand the thickness and uniformity of a controlled release coating has been found affect the release of the active ingredient. In this work we have obtained from a pharmacy single brand of pantoprazole tablet and mapped them using terahertz pulsed imaging (TPI) prior to additional dissolution testing. Three terahertz parameters were derived for univariate analysis for each layer: coating thickness, terahertz electric field peak strength and terahertz interface index. These parameters were then correlated dissolution tested. The best fit was found to be with combined coating layer thickness of the inert layer and enteric coating. The commercial tablets showed a large variation in coating thickness.

  5. Terahertz plasmonic laser radiating in an ultra-narrow beam

    DOE PAGES

    Wu, Chongzhao; Khanal, Sudeep; Reno, John L.; ...

    2016-07-07

    Plasmonic lasers (spasers) generate coherent surface plasmon polaritons (SPPs) and could be realized at subwavelength dimensions in metallic cavities for applications in nanoscale optics. Plasmonic cavities are also utilized for terahertz quantum-cascade lasers (QCLs), which are the brightest available solid-state sources of terahertz radiation. A long standing challenge for spasers that are utilized as nanoscale sources of radiation, is their poor coupling to the far-field radiation. Unlike conventional lasers that could produce directional beams, spasers have highly divergent radiation patterns due to their subwavelength apertures. Here, we theoretically and experimentally demonstrate a new technique for implementing distributed feedback (DFB) thatmore » is distinct from any other previously utilized DFB schemes for semiconductor lasers. The so-termed antenna-feedback scheme leads to single-mode operation in plasmonic lasers, couples the resonant SPP mode to a highly directional far-field radiation pattern, and integrates hybrid SPPs in surrounding medium into the operation of the DFB lasers. Experimentally, the antenna-feedback method, which does not require the phase matching to a well-defined effective index, is implemented for terahertz QCLs, and single-mode terahertz QCLs with a beam divergence as small as 4°×4° are demonstrated, which is the narrowest beam reported for any terahertz QCL to date. Moreover, in contrast to a negligible radiative field in conventional photonic band-edge lasers, in which the periodicity follows the integer multiple of half-wavelengths inside the active medium, antenna-feedback breaks this integer limit for the first time and enhances the radiative field of the lasing mode. Terahertz lasers with narrow-beam emission will find applications for integrated as well as standoff terahertz spectroscopy and sensing. Furthermore, the antenna-feedback scheme is generally applicable to any plasmonic laser with a Fabry–Perot cavity

  6. Invited Review Terahertz Transmission, Scattering, Reflection, and Absorption—the Interaction of THz Radiation with Soils

    NASA Astrophysics Data System (ADS)

    Lewis, R. A.

    2017-07-01

    Terahertz radiation has been proposed as a useful tool in the study of soils and related materials from such diverse perspectives as detection of non-metallic landmines to improving soil fertility by agricultural charcoals produced by pyrolysis of organic material. The main barrier to such applications is that soils are rather opaque at terahertz frequencies. In this article, the main findings to date on the interaction of terahertz radiation with soils are reviewed, organized around the four phenomena of terahertz: transmission, scattering, reflection, and absorption. Terahertz transmission through soils is generally low and decreases with frequency. Terahertz scattering is evident in many THz-soil interactions, as the wavelength of the radiation is of the order of the particle size. Terahertz reflection is important to communications as these develop from the GHz into the THz band. Terahertz absorption on diluted soil samples has been demonstrated to be effective in identifying soil constituents, such as aromatic compounds, and soil contaminants, such as pesticides.

  7. Terahertz Magnetic Mirror Realized with Dielectric Resonator Antennas.

    PubMed

    Headland, Daniel; Nirantar, Shruti; Withayachumnankul, Withawat; Gutruf, Philipp; Abbott, Derek; Bhaskaran, Madhu; Fumeaux, Christophe; Sriram, Sharath

    2015-11-25

    Single-crystal silicon is bonded to a metal-coated substrate and etched in order to form an array of microcylinder passive terahertz dielectric resonator antennas (DRAs). The DRAs exhibit a magnetic response, and hence the array behaves as an efficient artificial magnetic conductor (AMC), with potential for terahertz antenna and sensing applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Freely Tunable Broadband Polarization Rotator for Terahertz Waves

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fan, Ren-Hao; Zhou, Yu; Ren, Xiao-Ping

    2014-12-28

    A freely tunable polarization rotator for broadband terahertz waves is demonstrated using a three-rotating-layer metallic grating structure, which can conveniently rotate the polarization of a linearly polarized terahertz wave to any desired direction with nearly perfect conversion efficiency. This low-cost, high-efficiency, and freely tunable device has potential applications as material analysis, wireless communication, and THz imaging.

  9. Terahertz electrical writing speed in an antiferromagnetic memory

    PubMed Central

    Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

    2018-01-01

    The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

  10. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1983-01-01

    GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

  11. Absorption of laser plasma in competition with oscillation currents for a terahertz spectrum.

    PubMed

    Li, Xiaolu; Bai, Ya; Li, Na; Liu, Peng

    2018-01-01

    We generate terahertz radiation in a supersonic jet of nitrogen molecules pumped by intense two-color laser pulses. The tuning of terahertz spectra from blue shift to red shift is observed by increasing laser power and stagnation pressure, and the red shift range is enlarged with the increased stagnation pressure. Our simulation reveals that the plasma absorption of the oscillation currents and expanded plasma column owing to increased laser intensity and gas number density are crucial factors in the recurrence of the red shift of terahertz spectra. The findings disclose the microscopic mechanism of terahertz radiation and present a controlling knob for the manipulation of a broadband terahertz spectrum from laser plasma.

  12. Phase stability, ordering tendencies, and magnetism in single-phase fcc Au-Fe nanoalloys

    DOE PAGES

    Zhuravlev, I. A.; Barabash, S. V.; An, J. M.; ...

    2017-10-01

    Bulk Au-Fe alloys separate into Au-based fcc and Fe-based bcc phases, but L1 0 and L1 2 orderings were reported in single-phase Au-Fe nanoparticles. Motivated by these observations, we study the structural and ordering energetics in this alloy by combining density functional theory (DFT) calculations with effective Hamiltonian techniques: a cluster expansion with structural filters, and the configuration-dependent lattice deformation model. The phase separation tendency in Au-Fe persists even if the fcc-bcc decomposition is suppressed. The relative stability of disordered bcc and fcc phases observed in nanoparticles is reproduced, but the fully ordered L1 0 AuFe, L1 2 Au 3Fe,more » and L1 2 AuFe 3 structures are unstable in DFT. But, a tendency to form concentration waves at the corresponding [001] ordering vector is revealed in nearly-random alloys in a certain range of concentrations. Furthermore, this incipient ordering requires enrichment by Fe relative to the equiatomic composition, which may occur in the core of a nanoparticle due to the segregation of Au to the surface. Effects of magnetism on the chemical ordering are also discussed.« less

  13. Phase stability, ordering tendencies, and magnetism in single-phase fcc Au-Fe nanoalloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhuravlev, I. A.; Barabash, S. V.; An, J. M.

    Bulk Au-Fe alloys separate into Au-based fcc and Fe-based bcc phases, but L1 0 and L1 2 orderings were reported in single-phase Au-Fe nanoparticles. Motivated by these observations, we study the structural and ordering energetics in this alloy by combining density functional theory (DFT) calculations with effective Hamiltonian techniques: a cluster expansion with structural filters, and the configuration-dependent lattice deformation model. The phase separation tendency in Au-Fe persists even if the fcc-bcc decomposition is suppressed. The relative stability of disordered bcc and fcc phases observed in nanoparticles is reproduced, but the fully ordered L1 0 AuFe, L1 2 Au 3Fe,more » and L1 2 AuFe 3 structures are unstable in DFT. But, a tendency to form concentration waves at the corresponding [001] ordering vector is revealed in nearly-random alloys in a certain range of concentrations. Furthermore, this incipient ordering requires enrichment by Fe relative to the equiatomic composition, which may occur in the core of a nanoparticle due to the segregation of Au to the surface. Effects of magnetism on the chemical ordering are also discussed.« less

  14. Terahertz time-domain spectroscopy of edible oils

    NASA Astrophysics Data System (ADS)

    Dinovitser, Alex; Valchev, Dimitar G.; Abbott, Derek

    2017-06-01

    Chemical degradation of edible oils has been studied using conventional spectroscopic methods spanning the spectrum from ultraviolet to mid-IR. However, the possibility of morphological changes of oil molecules that can be detected at terahertz frequencies is beginning to receive some attention. Furthermore, the rapidly decreasing cost of this technology and its capability for convenient, in situ measurement of material properties, raises the possibility of monitoring oil during cooking and processing at production facilities, and more generally within the food industry. In this paper, we test the hypothesis that oil undergoes chemical and physical changes when heated above the smoke point, which can be detected in the 0.05-2 THz spectral range, measured using the conventional terahertz time-domain spectroscopy technique. The measurements demonstrate a null result in that there is no significant change in the spectra of terahertz optical parameters after heating above the smoke point for 5 min.

  15. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tanoto, H.; Loke, W. K.; Yoon, S. F.

    In this paper, heteroepitaxial growth of GaAs on nominal (100) Ge/Si substrate was investigated. The root-mean square surface roughness of the sample where the first few monolayers of the GaAs were nucleated by migration enhanced epitaxy (MEE) is four times smaller compared to the sample without such a process, indicating better surface planarity. From the (004) x-ray diffraction rocking curve measurement, the full width at half maximum of the GaAs layer nucleated by MEE is 40% lower compared to that of the GaAs layer without such a process, indicating better crystal quality. Furthermore, it was found that the sample wheremore » the GaAs layer was nucleated by MEE experienced early relaxation. As the MEE process promotes two-dimensional growth, the GaAs layer where nucleation was initiated by such a process has fewer islandlike formations. This leads to a pseudomorphically grown GaAs layer, which experiences higher strain compared to the GaAs layer with more islandlike formations, where most relaxation occurs on the free surface of the islands. Therefore, for the same layer thickness, the GaAs layer on (100) Ge/Si substrate where nucleation was initiated by MEE relaxed first.« less

  16. Terahertz spin current pulses controlled by magnetic heterostructures

    NASA Astrophysics Data System (ADS)

    Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

    2013-04-01

    In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

  17. [Aging explosive detection using terahertz time-domain spectroscopy].

    PubMed

    Meng, Kun; Li, Ze-ren; Liu, Qiao

    2011-05-01

    Detecting the aging situation of stock explosive is essentially meaningful to the research on the capability, security and stability of explosive. Existing aging explosive detection techniques, such as scan microscope technique, Fourier transfer infrared spectrum technique, gas chromatogram mass spectrum technique and so on, are either not able to differentiate whether the explosive is aging or not, or not able to image the structure change of the molecule. In the present paper, using the density functional theory (DFT), the absorb spectrum changes after the explosive aging were calculated, from which we can clearly find the difference of spectrum between explosive molecule and aging ones in the terahertz band. The terahertz time-domain spectrum (THz-TDS) system as well as its frequency spectrum resolution and measured range are analyzed. Combined with the existing experimental results and the essential characters of the terahertz wave, the application of THz-TDS technique to the detection of aging explosive was demonstrated from the aspects of feasibility, veracity and practicability. On the base of that, the authors advance the new method of aging explosive detection using the terahertz time-domain spectrum technique.

  18. Terahertz spectroscopic investigation of human gastric normal and tumor tissues

    NASA Astrophysics Data System (ADS)

    Hou, Dibo; Li, Xian; Cai, Jinhui; Ma, Yehao; Kang, Xusheng; Huang, Pingjie; Zhang, Guangxin

    2014-09-01

    Human dehydrated normal and cancerous gastric tissues were measured using transmission time-domain terahertz spectroscopy. Based on the obtained terahertz absorption spectra, the contrasts between the two kinds of tissue were investigated and techniques for automatic identification of cancerous tissue were studied. Distinctive differences were demonstrated in both the shape and amplitude of the absorption spectra between normal and tumor tissue. Additionally, some spectral features in the range of 0.2~0.5 THz and 1~1.5 THz were revealed for all cancerous gastric tissues. To systematically achieve the identification of gastric cancer, principal component analysis combined with t-test was used to extract valuable information indicating the best distinction between the two types. Two clustering approaches, K-means and support vector machine (SVM), were then performed to classify the processed terahertz data into normal and cancerous groups. SVM presented a satisfactory result with less false classification cases. The results of this study implicate the potential of the terahertz technique to detect gastric cancer. The applied data analysis methodology provides a suggestion for automatic discrimination of terahertz spectra in other applications.

  19. Enhanced coupling of terahertz radiation to cylindrical wire waveguides.

    PubMed

    Deibel, Jason A; Wang, Kanglin; Escarra, Matthew D; Mittleman, Daniel

    2006-01-09

    Wire waveguides have recently been shown to be valuable for transporting pulsed terahertz radiation. This technique relies on the use of a scattering mechanism for input coupling. A radially polarized surface wave is excited when a linearly polarized terahertz pulse is focused on the gap between the wire waveguide and another metal structure. We calculate the input coupling efficiency using a simulation based on the Finite Element Method (FEM). Additional FEM results indicate that enhanced coupling efficiency can be achieved through the use of a radially symmetric photoconductive antenna. Experimental results confirm that such an antenna can generate terahertz radiation which couples to the radial waveguide mode with greatly improved efficiency.

  20. Terahertz spectral unmixing based method for identifying gastric cancer

    NASA Astrophysics Data System (ADS)

    Cao, Yuqi; Huang, Pingjie; Li, Xian; Ge, Weiting; Hou, Dibo; Zhang, Guangxin

    2018-02-01

    At present, many researchers are exploring biological tissue inspection using terahertz time-domain spectroscopy (THz-TDS) techniques. In this study, based on a modified hard modeling factor analysis method, terahertz spectral unmixing was applied to investigate the relationships between the absorption spectra in THz-TDS and certain biomarkers of gastric cancer in order to systematically identify gastric cancer. A probability distribution and box plot were used to extract the distinctive peaks that indicate carcinogenesis, and the corresponding weight distributions were used to discriminate the tissue types. The results of this work indicate that terahertz techniques have the potential to detect different levels of cancer, including benign tumors and polyps.

  1. Terahertz Metasurfaces Optimized for Biomolecular Detection

    NASA Astrophysics Data System (ADS)

    Naranjo, Guillermo A.

    In the last decade, there has been an increase in the use of metasurfaces to detect biological compounds at terahertz frequencies. This increased interest has been fueled by the fact that various biomolecules have rotational and vibrational modes at THz frequencies. The metasurface's resonant units can be considered as inductive-capacitive circuits therefore the detection mechanism is the change in dielectric constant in the capacitive region due to the presence of an analyte. In this project we utilized a facing split ring resonator design with three different tip geometries defining the capacitive region; square, triangular and round tips. We also utilized complementary facing split ring resonators, which present a larger capacitive region that their positive counterparts, with the same three tip geometries. In addition, we added micro wells in the capacitive region of the resonators where they serve to infiltrate the analyte into the substrate and increases their interaction with the electric field. The samples were then fabricated using photolithography, electron beam lithography and reactive ion etching to define the micro wells. They were characterized by obtaining the terahertz transmission spectra using terahertz time domain spectroscopy with and without an overlayer of Ara-h-2 or Ara-h-6. Results show that the metasurfaces can detect the presence of the allergens, and present a different response for Ara-h-2 than for Ara-h-6. The results indicate that utilizing complementary metasurfaces and/ or the addition of micro wells in the capacitive region are promising avenues to develop a sensitive terahertz metasurface based biosensor.

  2. Brain tumor imaging of rat fresh tissue using terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Sayuri; Fukushi, Yasuko; Kubota, Oichi; Itsuji, Takeaki; Ouchi, Toshihiko; Yamamoto, Seiji

    2016-07-01

    Tumor imaging by terahertz spectroscopy of fresh tissue without dye is demonstrated using samples from a rat glioma model. The complex refractive index spectrum obtained by a reflection terahertz time-domain spectroscopy system can discriminate between normal and tumor tissues. Both the refractive index and absorption coefficient of tumor tissues are higher than those of normal tissues and can be attributed to the higher cell density and water content of the tumor region. The results of this study indicate that terahertz technology is useful for detecting brain tumor tissue.

  3. Mode-locking of a terahertz laser by direct phase synchronization.

    PubMed

    Maysonnave, J; Maussang, K; Freeman, J R; Jukam, N; Madéo, J; Cavalié, P; Rungsawang, R; Khanna, S P; Linfield, E H; Davies, A G; Beere, H E; Ritchie, D A; Dhillon, S S; Tignon, J

    2012-09-10

    A novel scheme to achieve mode-locking of a multimode laser is demonstrated. Traditional methods to produce ultrashort laser pulses are based on modulating the cavity gain or losses at the cavity roundtrip frequency, favoring the pulsed emission. Here, we rather directly act on the phases of the modes, resulting in constructive interference for the appropriated phase relationship. This was performed on a terahertz quantum cascade laser by multimode injection seeding with an external terahertz pulse, resulting in phase mode-locked terahertz laser pulses of 9 ps duration, characterized unambiguously in the time domain.

  4. Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Polischuk, O. V., E-mail: polischuk.sfire@mail.ru; Melnikova, V. S.; Popov, V. V., E-mail: popov-slava@yahoo.co.uk

    2016-11-15

    The terahertz absorption spectrum in a periodic array of graphene nanoribbons located on the surface of a dielectric substrate with a high refractive index (terahertz prism) is studied theoretically. The total absorption of terahertz radiation is shown to occur in the regime of total internal reflection of the terahertz wave from the periodic array of graphene nanoribbons, at the frequencies of plasma oscillations in graphene, in a wide range of incidence angles of the external terahertz wave even at room temperature.

  5. Online terahertz thickness measurement in films and coatings

    NASA Astrophysics Data System (ADS)

    Duling, Irl N.; White, Jeffrey S.

    2017-02-01

    Pulsed terahertz systems are currently being deployed for online process control and quality control of multi-layered products for use in the building products and aerospace industries. While many laboratory applications of terahertz can allow waveforms to be acquired at rates of 1 - 40 Hz, online applications require measurement rates of in excess of 100Hz. The existing technologies of thickness measurement (nuclear, x-ray, or laser gauges) have rates between 100 and 1000 Hz. At these rates, the single waveform bandwidth must still remain at 2THz or above to allow thinner layers to be measured. In the applications where terahertz can provide unique capability (e.g. multi-layer thickness, delamination, density) long-term stability must be guaranteed within the tolerance required by the measurement. This can mean multi-day stability of less than a micron. The software that runs on these systems must be flexible enough to allow multiple product configurations, while maintaining the simplicity required by plant operators. The final requirement is to have systems that can withstand the environmental conditions of the measurement. This might mean qualification in explosive environments, or operation in hot, wet or dusty environments. All of these requirements can put restrictions on not only the voltage of electronic circuitry used, but also the wavelength and optical power used for the transmitter and receiver. The application of terahertz systems to online process control presents unique challenges that not only effect the physical design of the system, but can also effect the choices made on the terahertz technology itself.

  6. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

    NASA Astrophysics Data System (ADS)

    Khusyainov, D. I.; Buryakov, A. M.; Bilyk, V. R.; Mishina, E. D.; Ponomarev, D. S.; Khabibullin, R. A.; Yachmenev, A. E.

    2017-11-01

    The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the InyGa1-yAs films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a InyGa1-yAs film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.

  7. Twenty years of terahertz imaging [Invited].

    PubMed

    Mittleman, Daniel M

    2018-04-16

    The birth of terahertz imaging approximately coincides with the birth of the journal Optics Express. The 20 th anniversary of the journal is therefore an opportune moment to consider the state of progress in the field of terahertz imaging. This article discusses some of the compelling reasons that one may wish to form images in the THz range, in order to provide a perspective of how far the field has come since the early demonstrations of the mid-1990's. It then focuses on a few of the more prominent frontiers of current research, highlighting their impacts on both fundamental science and applications.

  8. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  9. High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays.

    PubMed

    Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

    2016-11-07

    We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1-5 THz frequency range with the power levels as high as 300  μ W. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.

  10. Nondestructive monitoring of aircraft composites using terahertz radiation

    NASA Astrophysics Data System (ADS)

    Balbekin, Nikolay S.; Novoselov, Evgenii V.; Pavlov, Pavel V.; Bespalov, Victor G.; Petrov, Nikolay V.

    2015-03-01

    In this paper we consider using the terahertz (THz) time domain spectroscopy (TDS) for non destructive testing and determining the chemical composition of the vanes and rotor-blade spars. A versatile terahertz spectrometer for reflection and transmission has been used for experiments. We consider the features of measured terahertz signal in temporal and spectral domains during propagation through and reflecting from various defects in investigated objects, such as voids and foliation. We discuss requirements are applicable to the setup and are necessary to produce an image of these defects, such as signal-to-noise ratio and a method for registration THz radiation. Obtained results indicated the prospects of the THz TDS method for the inspection of defects and determination of the particularities of chemical composition of aircraft parts.

  11. GaAs thin films and methods of making and using the same

    DOEpatents

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  12. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  13. Terahertz time-domain spectroscopy of edible oils

    PubMed Central

    Valchev, Dimitar G.

    2017-01-01

    Chemical degradation of edible oils has been studied using conventional spectroscopic methods spanning the spectrum from ultraviolet to mid-IR. However, the possibility of morphological changes of oil molecules that can be detected at terahertz frequencies is beginning to receive some attention. Furthermore, the rapidly decreasing cost of this technology and its capability for convenient, in situ measurement of material properties, raises the possibility of monitoring oil during cooking and processing at production facilities, and more generally within the food industry. In this paper, we test the hypothesis that oil undergoes chemical and physical changes when heated above the smoke point, which can be detected in the 0.05–2 THz spectral range, measured using the conventional terahertz time-domain spectroscopy technique. The measurements demonstrate a null result in that there is no significant change in the spectra of terahertz optical parameters after heating above the smoke point for 5 min. PMID:28680681

  14. Terahertz time-domain spectroscopy of edible oils.

    PubMed

    Dinovitser, Alex; Valchev, Dimitar G; Abbott, Derek

    2017-06-01

    Chemical degradation of edible oils has been studied using conventional spectroscopic methods spanning the spectrum from ultraviolet to mid-IR. However, the possibility of morphological changes of oil molecules that can be detected at terahertz frequencies is beginning to receive some attention. Furthermore, the rapidly decreasing cost of this technology and its capability for convenient, in situ measurement of material properties, raises the possibility of monitoring oil during cooking and processing at production facilities, and more generally within the food industry. In this paper, we test the hypothesis that oil undergoes chemical and physical changes when heated above the smoke point, which can be detected in the 0.05-2 THz spectral range, measured using the conventional terahertz time-domain spectroscopy technique. The measurements demonstrate a null result in that there is no significant change in the spectra of terahertz optical parameters after heating above the smoke point for 5 min.

  15. A coherent detection technique via optically biased field for broadband terahertz radiation.

    PubMed

    Du, Hai-Wei; Dong, Jia-Meng; Liu, Yi; Shi, Chang-Cheng; Wu, Jing-Wei; Peng, Xiao-Yu

    2017-09-01

    We demonstrate theoretically and experimentally a coherent terahertz detection technique based on an optically biased field functioning as a local oscillator and a second harmonic induced by the terahertz electric field in the air sensor working in free space. After optimizing the polarization angle and the energy of the probe pulse, and filling the system with dry nitrogen, the terahertz radiation generated from a two-color-femtosecond-laser-pulses induced plasma filament is measured by this technique with a bandwidth of 0.1-10 THz and a signal-to-noise ratio of 48 dB. Our technique provides an alternative simple method for coherent broadband terahertz detection.

  16. Generation of coherent terahertz radiation in ultrafast laser-gas interactionsa)

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Yong

    2009-05-01

    The generation of intense terahertz radiation in ultrafast laser-gas interactions is studied on a basis of transient electron current model. When an ultrashort pulse laser's fundamental and its second harmonic fields are mixed to ionize a gas, a nonvanishing, directional photoelectron current can be produced, which simultaneously emits terahertz radiation in the far field. Here, the generation mechanism is examined with an analytic derivation and numerical simulations, in which tunneling ionization and subsequent electron motion in the combined laser field play a key role. In the simulations, three types of laser-gas interactions are considered: (i) mixing the fundamental and its second harmonic fields, (ii) mixing nonharmonic, two-color fields, and (iii) focusing single-color, few-cycle pulses. In these interactions, terahertz generation and other nonlinear effects driven by the transient current are investigated. In particular, anticorrelation between terahertz and second (or third) harmonic generation is observed and analyzed.

  17. Flexible and stackable terahertz metamaterials via silver-nanoparticle inkjet printing

    NASA Astrophysics Data System (ADS)

    Kashiwagi, K.; Xie, L.; Li, X.; Kageyama, T.; Miura, M.; Miyashita, H.; Kono, J.; Lee, S.-S.

    2018-04-01

    There is presently much interest in tunable, flexible, or reconfigurable metamaterial structures that work in the terahertz frequency range. They can be useful for a range of applications, including spectroscopy, sensing, imaging, and communications. Various methods based on microelectromechanical systems have been used for fabricating terahertz metamaterials, but they typically require high-cost facilities and involve a number of time-consuming and intricate processes. Here, we demonstrate a simple, robust, and cost-effective method for fabricating flexible and stackable multiresonant terahertz metamaterials, using silver nanoparticle inkjet printing. Using this method, we designed and fabricated two arrays of split-ring resonators (SRRs) having different resonant frequencies on separate sheets of paper and then combined the two arrays by stacking. Through terahertz time-domain spectroscopy, we observed resonances at the frequencies expected for the individual SRR arrays as well as at a new frequency due to coupling between the two SRR arrays.

  18. Terahertz Characterization of DNA: Enabling a Novel Approach

    DTIC Science & Technology

    2015-11-01

    DNA in a more reliable and less procedurally complicated manner. The method involves the use of terahertz surface plasmon generated on the surface of...advantages are due to overlapping resonance when the plasmon frequency generated by a foil coincides with that of the biological material. The...interference of the impinging terahertz wave and surface plasmon produces spectral graphs, which can be analyzed to identify and characterize a DNA sample

  19. Monolithic Superconducting Emitter of Tunable Circularly Polarized Terahertz Radiation

    NASA Astrophysics Data System (ADS)

    Elarabi, A.; Yoshioka, Y.; Tsujimoto, M.; Kakeya, I.

    2017-12-01

    We propose an approach to controlling the polarization of terahertz (THz) radiation from intrinsic Josephson-junction stacks in a single crystalline high-temperature superconductor Bi2Sr2CaCu2O8 . Monolithic control of the surface high-frequency current distributions in the truncated square mesa structure allows us to modulate the polarization of the emitted terahertz wave as a result of two orthogonal fundamental modes excited inside the mesa. Highly polarized circular terahertz waves with a degree of circular polarization of more than 99% can be generated using an electrically controlled method. The intuitive results obtained from the numerical simulation based on the conventional antenna theory are consistent with the observed emission characteristics.

  20. Experimental Realization of an Epsilon-Near-Zero Graded-Index Metalens at Terahertz Frequencies

    NASA Astrophysics Data System (ADS)

    Pacheco-Peña, Victor; Engheta, Nader; Kuznetsov, Sergei; Gentselev, Alexandr; Beruete, Miguel

    2017-09-01

    The terahertz band has been historically hindered by the lack of efficient generators and detectors, but a series of recent breakthroughs have helped to effectively close the "terahertz gap." A rapid development of terahertz technology has been possible thanks to the translation of revolutionary concepts from other regions of the electromagnetic spectrum. Among them, metamaterials stand out for their unprecedented ability to control wave propagation and manipulate electromagnetic response of matter. They have become a workhorse in the development of terahertz devices such as lenses, polarizers, etc., with fascinating features. In particular, epsilon-near-zero (ENZ) metamaterials have attracted much attention in the past several years due to their unusual properties such as squeezing, tunneling, and supercoupling where a wave traveling inside an electrically small channel filled with an ENZ medium can be tunneled through it, reducing reflections and coupling most of its energy. Here, we design and experimentally demonstrate an ENZ graded-index (GRIN) metamaterial lens operating at terahertz with a power enhancement of 16.2 dB, using an array of narrow hollow rectangular waveguides working near their cutoff frequencies. This is a demonstration of an ENZ GRIN device at terahertz and can open the path towards other realizations of similar devices enabling full quasioptical processing of terahertz signals.

  1. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

  2. Non-destructive terahertz imaging of illicit drugs using spectral fingerprints

    NASA Astrophysics Data System (ADS)

    Kawase, Kodo; Ogawa, Yuichi; Watanabe, Yuuki; Inoue, Hiroyuki

    2003-10-01

    The absence of non-destructive inspection techniques for illicit drugs hidden in mail envelopes has resulted in such drugs being smuggled across international borders freely. We have developed a novel basic technology for terahertz imaging, which allows detection and identification of drugs concealed in envelopes, by introducing the component spatial pattern analysis. The spatial distributions of the targets are obtained from terahertz multispectral transillumination images, using absorption spectra measured with a tunable terahertz-wave source. The samples we used were methamphetamine and MDMA, two of the most widely consumed illegal drugs in Japan, and aspirin as a reference.

  3. High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

    PubMed Central

    Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

    2016-01-01

    We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths. PMID:27916999

  4. Optical Properties of Laminarin Using Terahertz Time-Domain Spectroscopy (abstract)

    NASA Astrophysics Data System (ADS)

    Shin, Hee Jun; Maeng, Inhee; Oh, Seung Jae; Kim, Sung In; Kim, Ha Won; Son, Joo-Hiuk

    2009-04-01

    Terahertz spectroscopy is important in the study of biomolecular structure because the vibration and rotation energy of large molecules such as DNA, proteins, and polysaccharides are laid in terahertz regions. Terahertz time-domain spectroscopy (THz-TDS), using terahertz pulses generated and detected by femto-second pulses laser, has been used in the study of biomolecular dynamics, as well as carrier dynamics of semiconductors. Laminarin is a polysaccharide of glucose in brown algae. It is made up of β(1-3)-glucan and β(1-6)-glucan. β-glucan is an anticancer material that activates the immune reaction of human cells and inhibits proliferation of cancer cells. β-glucan with a single-strand structure has been reported to activate the immune reaction to a greater extent than β-glucan with a triple-strand helix structure. We used THz-TDS to characterize the difference between single-strand and triple-strand β-glucan. We obtained single-strand β-glucan by chemical treatment of triple-strand β-glucan. We measured the frequency dependent optical constants of Laminarin using THz-TDS. Power absorption of the triple-strand helix is larger than the single-strand helix in terahertz regions. The refractive index of the triple-strand helix is also larger than that of the single-strand helix.

  5. Terahertz in-line digital holography of human hepatocellular carcinoma tissue.

    PubMed

    Rong, Lu; Latychevskaia, Tatiana; Chen, Chunhai; Wang, Dayong; Yu, Zhengping; Zhou, Xun; Li, Zeyu; Huang, Haochong; Wang, Yunxin; Zhou, Zhou

    2015-02-13

    Terahertz waves provide a better contrast in imaging soft biomedical tissues than X-rays, and unlike X-rays, they cause no ionisation damage, making them a good option for biomedical imaging. Terahertz absorption imaging has conventionally been used for cancer diagnosis. However, the absorption properties of a cancerous sample are influenced by two opposing factors: an increase in absorption due to a higher degree of hydration and a decrease in absorption due to structural changes. It is therefore difficult to diagnose cancer from an absorption image. Phase imaging can thus be critical for diagnostics. We demonstrate imaging of the absorption and phase-shift distributions of 3.2 mm × 2.3 mm × 30-μm-thick human hepatocellular carcinoma tissue by continuous-wave terahertz digital in-line holography. The acquisition time of a few seconds for a single in-line hologram is much shorter than that of other terahertz diagnostic techniques, and future detectors will allow acquisition of meaningful holograms without sample dehydration. The resolution of the reconstructions was enhanced by sub-pixel shifting and extrapolation. Another advantage of this technique is its relaxed minimal sample size limitation. The fibrosis indicated in the phase distribution demonstrates the potential of terahertz holographic imaging to obtain a more objective, early diagnosis of cancer.

  6. Terahertz in-line digital holography of human hepatocellular carcinoma tissue

    NASA Astrophysics Data System (ADS)

    Rong, Lu; Latychevskaia, Tatiana; Chen, Chunhai; Wang, Dayong; Yu, Zhengping; Zhou, Xun; Li, Zeyu; Huang, Haochong; Wang, Yunxin; Zhou, Zhou

    2015-02-01

    Terahertz waves provide a better contrast in imaging soft biomedical tissues than X-rays, and unlike X-rays, they cause no ionisation damage, making them a good option for biomedical imaging. Terahertz absorption imaging has conventionally been used for cancer diagnosis. However, the absorption properties of a cancerous sample are influenced by two opposing factors: an increase in absorption due to a higher degree of hydration and a decrease in absorption due to structural changes. It is therefore difficult to diagnose cancer from an absorption image. Phase imaging can thus be critical for diagnostics. We demonstrate imaging of the absorption and phase-shift distributions of 3.2 mm × 2.3 mm × 30-μm-thick human hepatocellular carcinoma tissue by continuous-wave terahertz digital in-line holography. The acquisition time of a few seconds for a single in-line hologram is much shorter than that of other terahertz diagnostic techniques, and future detectors will allow acquisition of meaningful holograms without sample dehydration. The resolution of the reconstructions was enhanced by sub-pixel shifting and extrapolation. Another advantage of this technique is its relaxed minimal sample size limitation. The fibrosis indicated in the phase distribution demonstrates the potential of terahertz holographic imaging to obtain a more objective, early diagnosis of cancer.

  7. Growth and characteristics of p-type doped GaAs nanowire

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  8. Sulfur doping of GaAs with (NH4)2Sx solution

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Lam

    1999-01-01

    A novel technique for sulfur doping to GaAs was demonstrated. The surface of GaAs was treated with (NH4)2Sx solution, subsequent to annealing using either furnace or rapid thermal processing. Sulfur atoms adsorbed at the surface of GaAs during the (NH4)2Sx treatment diffuse into GaAs during the annealing. The diffusion profiles of sulfur in both types of annealing treatments show a concave shape from the GaAs surface. Diffusion constants of sulfur determined using the Boltzmann-Matano technique increase with the decrease of sulfur concentration via the depth from the surface of GaAs. This suggests that immobile sulfur donor SAs+ forms at the near surface interacts with a Ga divacancy, and results in the production of mobile As interstitials, IAs. The IAs moves fast toward the inside of GaAs and kickout the SAs+ donor, producing a fast diffusing species of interstitial S atoms. The diffusion coefficients of sulfur determined are 2.5×10-14 cm2/s at 840 °C and 5×10-12 cm2/s at 900 °C. The sulfur doping technique is applied to the fabrication of metal-semiconductor field-effect transistors (MESFETs). The MESFETs with 1.0 μm gate length exhibit transconductance of 190 mS/mm, demonstrating the applicability of this technique to the formation of active channel layer of MESFETs.

  9. Early detection of skin cancer via terahertz spectral profiling and 3D imaging.

    PubMed

    Rahman, Anis; Rahman, Aunik K; Rao, Babar

    2016-08-15

    Terahertz scanning reflectometry, terahertz 3D imaging and terahertz time-domain spectroscopy have been used to identify features in human skin biopsy samples diagnosed for basal cell carcinoma (BCC) and compared with healthy skin samples. It was found from the 3D images that the healthy skin samples exhibit regular cellular pattern while the BCC skin samples indicate lack of regular cell pattern. The skin is a highly layered structure organ; this is evident from the thickness profile via a scan through the thickness of the healthy skin samples, where, the reflected intensity of the terahertz beam exhibits fluctuations originating from different skin layers. Compared to the healthy skin samples, the BCC samples' profiles exhibit significantly diminished layer definition; thus indicating a lack of cellular order. In addition, terahertz time-domain spectroscopy reveals significant and quantifiable differences between the healthy and BCC skin samples. Thus, a combination of three different terahertz techniques constitutes a conclusive route for detecting the BCC condition on a cellular level compared to the healthy skin. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Uncovering the Terahertz Spectrum of Copper Sulfate Pentahydrate.

    PubMed

    Ruggiero, Michael T; Korter, Timothy M

    2016-01-21

    Terahertz vibrational spectroscopy has evolved into a powerful tool for the detection and characterization of transition metal sulfate compounds, specifically for its ability to differentiate between various hydrated forms with high specificity. Copper(II) sulfate is one such system where multiple crystalline hydrates have had their terahertz spectra fully assigned, and the unique spectral fingerprints of the forms allows for characterization of multicomponent systems with relative ease. Yet the most commonly occurring form, copper(II) sulfate pentahydrate (CuSO4·5H2O), has proven elusive due to the presence of a broad absorption across much of the terahertz region, making the unambiguous identification of its spectral signature difficult. Here, it is shown that the sub-100 cm(-1) spectrum of CuSO4·5H2O is obscured by absorption from adsorbed water and that controlled drying reveals sharp underlying features. The crystalline composition of the samples was monitored in parallel by X-ray diffraction as a function of drying time, supporting the spectroscopic results. Finally, the terahertz spectrum of CuSO4·5H2O was fully assigned using solid-state density functional theory simulations, helping attribute the additional absorptions that appear after excessive drying to formation of CuSO4·3H2O.

  11. Numerical simulation of terahertz generation and detection based on ultrafast photoconductive antennas

    NASA Astrophysics Data System (ADS)

    Chen, Long-chao; Fan, Wen-hui

    2011-08-01

    The numerical simulation of terahertz generation and detection in the interaction between femtosecond laser pulse and photoconductive material has been reported in this paper. The simulation model based on the Drude-Lorentz theory is used, and takes into account the phenomena that photo-generated electrons and holes are separated by the external bias field, which is screened by the space-charge field simultaneously. According to the numerical calculation, the terahertz time-domain waveforms and their Fourier-transformed spectra are presented under different conditions. The simulation results indicate that terahertz generation and detection properties of photoconductive antennas are largely influenced by three major factors, including photo-carriers' lifetime, laser pulse width and pump laser power. Finally, a simple model has been applied to simulate the detected terahertz pulses by photoconductive antennas with various photo-carriers' lifetimes, and the results show that the detected terahertz spectra are very different from the spectra radiated from the emitter.

  12. Relation between trinucleotide GAA repeat length and sensory neuropathy in Friedreich's ataxia.

    PubMed

    Santoro, L; De Michele, G; Perretti, A; Crisci, C; Cocozza, S; Cavalcanti, F; Ragno, M; Monticelli, A; Filla, A; Caruso, G

    1999-01-01

    To verify if GAA expansion size in Friedreich's ataxia could account for the severity of sensory neuropathy. Retrospective study of 56 patients with Friedreich's ataxia selected according to homozygosity for GAA expansion and availability of electrophysiological findings. Orthodromic sensory conduction velocity in the median nerve was available in all patients and that of the tibial nerve in 46 of them. Data of sural nerve biopsy and of a morphometric analysis were available in 12 of the selected patients. The sensory action potential amplitude at the wrist (wSAP) and at the medial malleolus (m mal SAP) and the percentage of myelinated fibres with diameter larger than 7, 9, and 11 microm in the sural nerve were correlated with disease duration and GAA expansion size on the shorter (GAA1) and larger (GAA2) expanded allele in each pair. Pearson's correlation test and stepwise multiple regression were used for statistical analysis. A significant inverse correlation between GAA1 size and wSAP, m mal SAP, and percentage of myelinated fibres was found. Stepwise multiple regression showed that GAA1 size significantly affects electrophysiological and morphometric data, whereas duration of disease has no effect. The data suggest that the severity of the sensory neuropathy is probably genetically determined and that it is not progressive.

  13. High frequency resolution terahertz time-domain spectroscopy

    NASA Astrophysics Data System (ADS)

    Sangala, Bagvanth Reddy

    2013-12-01

    A new method for the high frequency resolution terahertz time-domain spectroscopy is developed based on the characteristic matrix method. This method is useful for studying planar samples or stack of planar samples. The terahertz radiation was generated by optical rectification in a ZnTe crystal and detected by another ZnTe crystal via electro-optic sampling method. In this new characteristic matrix based method, the spectra of the sample and reference waveforms will be modeled by using characteristic matrices. We applied this new method to measure the optical constants of air. The terahertz transmission through the layered systems air-Teflon-air-Quartz-air and Nitrogen gas-Teflon-Nitrogen gas-Quartz-Nitrogen gas was modeled by the characteristic matrix method. A transmission coefficient is derived from these models which was optimized to fit the experimental transmission coefficient to extract the optical constants of air. The optimization of an error function involving the experimental complex transmission coefficient and the theoretical transmission coefficient was performed using patternsearch algorithm of MATLAB. Since this method takes account of the echo waveforms due to reflections in the layered samples, this method allows analysis of longer time-domain waveforms giving rise to very high frequency resolution in the frequency-domain. We have presented the high frequency resolution terahertz time-domain spectroscopy of air and compared the results with the literature values. We have also fitted the complex susceptibility of air to the Lorentzian and Gaussian functions to extract the linewidths.

  14. Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

    PubMed

    Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

    2017-11-10

    Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

  15. n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

    PubMed

    Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

    2011-12-01

    In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

  16. Microspectroscopy with Terahertz bioMEMS

    NASA Astrophysics Data System (ADS)

    Akalin, Tahsin; Treizebré, Anthony

    2006-04-01

    Biological applications require more and more compact, sensitive and reliable microsystems. We will present solutions in order to realize a "microspectroscopy" up to Terahertz frequencies of various biological entities (living cell, neurons, proteins...). We investigate these entities in liquid phase. In a recent work, we have demonstrated a solution to excite efficiently a single wire transmission line [1]. The propagation mode is similar to a surface plasmon and known as a Goubau-mode [2]. The wire we used is extremely thin compared to other recent solutions at terahertz frequencies. There are three orders of magnitude in the size of the wire used by K. Wang and D.M. Mittleman. Typically the wire's width is 1μm compared to the 900μm diameter metal wire in [3]. Moreover our solution is in a planar configuration which is more suitable for microfluidic applications. We benefit from the high confinement of the electromagnetic field around this very thin gold wire to optimize the sensitivity of these Terahertz BioMEMS. Microfluidic channels are placed below the strip in a perpendicular direction. We will first present some properties of the Planar Goubau-Line (PGL) [4] and the measurements results obtained with structures fabricated on glass and quartz substrates. In a last part resonant structures and Mach-Zehnder type interferometers will also be presented.

  17. Graphene-based magnetless converter of terahertz wave polarization

    NASA Astrophysics Data System (ADS)

    Melnikova, Veronica S.; Polischuk, Olga V.; Popov, Vyacheslav V.

    2016-04-01

    The polarization conversion of terahertz radiation by the periodic array of graphene nanoribbons located at the surface of a high-refractive-index dielectric substrate (terahertz prism) is studied theoretically. Giant polarization conversion at the plasmon resonance frequencies takes place without applying external DC magnetic field. It is shown that the total polarization conversion can be reached at the total internal reflection of THz wave from the periodic array of graphene nanoribbons even at room temperature.

  18. Hsp27 and F-box protein β-TrCP promote degradation of mRNA decay factor AUF1.

    PubMed

    Li, Mei-Ling; Defren, Jennifer; Brewer, Gary

    2013-06-01

    Activation of the mitogen-activated protein (MAP) pathway kinases p38 and MK2 induces phosphorylation of the chaperone Hsp27 and stabilization of mRNAs containing AU-rich elements (AREs) (ARE-mRNAs). Likewise, expression of phosphomimetic mutant forms of Hsp27 also stabilizes ARE-mRNAs. It appears to perform this function by promoting degradation of the ARE-mRNA decay factor AUF1 by proteasomes. In this study, we examined the molecular mechanism linking Hsp27 phosphorylation to AUF1 degradation by proteasomes. AUF1 is a target of β-TrCP, the substrate recognition subunit of the E3 ubiquitin ligase Skp1-cullin-F-box protein complex, SCF(β-TrCP). Depletion of β-TrCP stabilized AUF1. In contrast, overexpression of β-TrCP enhanced ubiquitination and degradation of AUF1 and led to stabilization of reporter mRNAs containing cytokine AREs. Enhanced AUF1 degradation required expression of phosphomimetic mutant forms of both Hsp27 and AUF1. Our results suggest that a signaling axis composed of p38 MAP kinase-MK2-Hsp27-β-TrCP may promote AUF1 degradation by proteasomes and stabilization of cytokine ARE-mRNAs.

  19. 670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

    NASA Technical Reports Server (NTRS)

    Chattopadhyay, Goutam; Schlecht, Erich T.; Lee, Choonsup; Lin, Robert H.; Gill, John J.; Mehdi, Imran; Sin, Seth; Deal, William; Loi, Kwok K.; Nam, Peta; hide

    2012-01-01

    GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

  20. Terahertz sensing of highly absorptive water-methanol mixtures with multiple resonances in metamaterials.

    PubMed

    Chen, Min; Singh, Leena; Xu, Ningning; Singh, Ranjan; Zhang, Weili; Xie, Lijuan

    2017-06-26

    Terahertz sensing of highly absorptive aqueous solutions remains challenging due to strong absorption of water in the terahertz regime. Here, we experimentally demonstrate a cost-effective metamaterial-based sensor integrated with terahertz time-domain spectroscopy for highly absorptive water-methanol mixture sensing. This metamaterial has simple asymmetric wire structures that support multiple resonances including a fundamental Fano resonance and higher order dipolar resonance in the terahertz regime. Both the resonance modes have strong intensity in the transmission spectra which we exploit for detection of the highly absorptive water-methanol mixtures. The experimentally characterized sensitivities of the Fano and dipole resonances for the water-methanol mixtures are found to be 160 and 305 GHz/RIU, respectively. This method provides a robust route for metamaterial-assisted terahertz sensing of highly absorptive chemical and biochemical materials with multiple resonances and high accuracy.

  1. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    NASA Astrophysics Data System (ADS)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.; Rathje, Christopher; Hornig, Graham J.; Sharum, Haille M.; Hoffman, James R.; Freeman, Mark R.; Hegmann, Frank A.

    2017-06-01

    Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 107 times larger than steady-state currents in conventional STM are used to image individual atoms on a silicon surface with 0.3 nm spatial resolution. At terahertz frequencies, the metallic-like Si(111)-(7 × 7) surface is unable to screen the electric field from the bulk, resulting in a terahertz tunnel conductance that is fundamentally different than that of the steady state. Ultrafast terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.

  2. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

    PubMed Central

    2010-01-01

    We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 °C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 °C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained. PMID:20672038

  3. Two-Photon Pumped Synchronously Mode-Locked Bulk GaAs Laser

    NASA Astrophysics Data System (ADS)

    Cao, W. L.; Vaucher, A. M.; Ling, J. D.; Lee, C. H.

    1982-04-01

    Pulses 7 picoseconds or less in duration have been generated from a bulk GaAs crystal by a synchronous mode-locking technique. The GaAs crystal was optically pumped by two-photon absorption of the emission from a mode-locked Nd:glass laser. Two-photon absorption as the means of excitation increases the volume of the gain medium by increasing the pene-tration depth of the pump intensity, enabling generation of intra-cavity pulses with peak power in the megawatt range. Tuning of the wavelength of the GaAs emission is achieved by varying the temperature. A tuning range covering 840 nm to 885 nm has been observed over a temperature range from 97°K to 260°K. The intensity of the GaAs emission has also been observed to decrease as the temperature of the crystal is increased.

  4. Interface demarcation in GaAs by current pulsing

    NASA Technical Reports Server (NTRS)

    Matthiesen, D. H.; Kafalas, J. A.; Duchene, G. A.; Bellows, A. H.

    1990-01-01

    GTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.

  5. Microwave GaAs Integrated Circuits On Quartz Substrates

    NASA Technical Reports Server (NTRS)

    Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

    1994-01-01

    Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

  6. Terahertz beam switching by electrical control of graphene-enabled tunable metasurface.

    PubMed

    Zhang, Yin; Feng, Yijun; Zhao, Junming; Jiang, Tian; Zhu, Bo

    2017-10-26

    Controlling the terahertz wave, especially the dynamical and full control of terahertz wavefront, is highly demanded due to the increasing development of practical devices and application systems. Recently considerable efforts have been made to fill the 'terahertz gap' with the help of artificial metamaterial or metasurface incorporated with graphene material. Here, we propose a scheme to design tunable metasurface consisting of metallic patch array on a grounded polymer substrate embedded with graphene layers to electrically control the electromagnetic beam reflection at terahertz frequency. By adjusting geometric dimension of the patch elements, 360 degree reflection phase range may be achieved, thus abrupt phase shifts can be introduced along the metasurface for tailoring the reflected wavefront. Moreover, the reflective phase gradient over the metasurface can be switched between 90 and 360 degree by controlling the Fermi energy of the embedded graphene through voltage biasing, hence dynamically switching the reflective beam directions. Numerical simulations demonstrate that either single beam or dual beam dynamically switching between normal and oblique reflection angles can be well attained at working frequency. The proposed approach will bring much freedom in the design of beam manipulation devices and may be applied to terahertz radiation control.

  7. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  8. Hydrophilic Solvation Dominates the Terahertz Fingerprint of Amino Acids in Water.

    PubMed

    Esser, Alexander; Forbert, Harald; Sebastiani, Federico; Schwaab, Gerhard; Havenith, Martina; Marx, Dominik

    2018-02-01

    Spectroscopy in the terahertz frequency regime is a sensitive tool to probe solvation-induced effects in aqueous solutions. Yet, a systematic understanding of spectral lineshapes as a result of distinct solvation contributions remains terra incognita. We demonstrate that modularization of amino acids in terms of functional groups allows us to compute their distinct contributions to the total terahertz response. Introducing the molecular cross-correlation analysis method provides unique access to these site-specific contributions. Equivalent groups in different amino acids lead to look-alike spectral contributions, whereas side chains cause characteristic but additive complexities. Specifically, hydrophilic solvation of the zwitterionic groups in valine and glycine leads to similar terahertz responses which are fully decoupled from the side chain. The terahertz response due to H-bonding within the large hydrophobic solvation shell of valine turns out to be nearly indistinguishable from that in bulk water in direct comparison to the changes imposed by the charged functional groups that form strong H-bonds with their hydration shells. Thus, the hydrophilic groups and their solvation shells dominate the terahertz absorption difference, while on the same intensity scale, the influence of hydrophobic water can be neglected.

  9. Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

    NASA Technical Reports Server (NTRS)

    Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

    1988-01-01

    GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

  10. Proceedings of the Twelfth International Symposium on Space Terahertz Technology

    NASA Technical Reports Server (NTRS)

    Mehdi, Imran (Editor)

    2001-01-01

    The Twelfth International Symposium on Space Terahertz Technology was held February 14-16, 2001 in San Diego, California, USA. This symposium was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory, California Institute of Technology. The symposium featured sixty nine presentations covering a wide variety of technical topics relevant to Terahertz Technology. The presentations can be divided into five broad technology areas: Hot Electron Bolometers, superconductor insulator superconductor (SIS) technology, local oscillator (LO) technology, Antennas and Measurements, and Direct Detectors. The symposium provides scientists, engineers, and researchers working in the terahertz technology and science fields to engineers their work and exchange ideas with colleagues.

  11. Characteristics of a liquid-crystal-filled composite lattice terahertz bandgap fiber

    NASA Astrophysics Data System (ADS)

    Bai, Jinjun; Ge, Meilan; Wang, Shasha; Yang, Yanan; Li, Yong; Chang, Shengjiang

    2018-07-01

    A new type of terahertz fiber is presented based on composite lattice photonic crystal bandgap. The cladding is filled selectively with the nematic liquid crystal 5CB which is sensitive to the electric field. The terahertz wave can be modulated by using the electric field to control the orientation of liquid crystal molecules. The plane wave expansion method and the finite element method are employed to theoretically analyze bandgap characteristics, polarization characteristics, energy fraction and material absorption loss. The results show that this fiber structure can be used as tunable terahertz polarization controller.

  12. Broadband terahertz dynamics of propylene glycol monomer and oligomers

    NASA Astrophysics Data System (ADS)

    Koda, Shota; Mori, Tatsuya; Kojima, Seiji

    2016-12-01

    We investigated the broadband terahertz spectra (0.1-5.0 THz) of glass-forming liquids, propylene glycol (PG), its oligomers poly (propylene glycol)s (PPGs), and poly (propylene glycol) diglycidyl ether (PPG-de) using broadband terahertz time-domain spectroscopy and low-frequency Raman scattering. The numerical value of the dielectric loss at around 1.5 THz, which is the peak position of broad peaks in all samples, decreased as the molecular weight increased. Furthermore, the peak at around 1.5 THz is insensitive to the molecular weight. For PPGs, the side chain effect of the oligomer was observed in the terahertz region. Based on the experimental and calculation results for the PPGs and PPG-de, whose end groups are epoxy groups, the beginnings of the increases in the observed dielectric loss above 3.5 THz of the PPGs are assigned to the OH bending vibration. The higher value of the dielectric loss in the terahertz region for the PPG-de can be the tail of a broad peak located in the MHz region. The difference between the Raman susceptibility and dielectric loss reflects the difference in the observable molecular dynamics between the infrared and Raman spectroscopies.

  13. Arginine methylation enhances the RNA chaperone activity of the West Nile virus host factor AUF1 p45.

    PubMed

    Friedrich, Susann; Schmidt, Tobias; Schierhorn, Angelika; Lilie, Hauke; Szczepankiewicz, Grit; Bergs, Sandra; Liebert, Uwe G; Golbik, Ralph P; Behrens, Sven-Erik

    2016-10-01

    A prerequisite for the intracellular replication process of the Flavivirus West Nile virus (WNV) is the cyclization of the viral RNA genome, which enables the viral replicase to initiate RNA synthesis. Our earlier studies indicated that the p45 isoform of the cellular AU-rich element binding protein 1 (AUF1) has an RNA chaperone activity, which supports RNA cyclization and viral RNA synthesis by destabilizing a stem structure at the WNV RNA's 3'-end. Here we show that in mammalian cells, AUF1 p45 is consistently modified by arginine methylation of its C terminus. By a combination of different experimental approaches, we can demonstrate that the methyltransferase PRMT1 is necessary and sufficient for AUF1 p45 methylation and that PRMT1 is required for efficient WNV replication. Interestingly, in comparison to the nonmethylated AUF1 p45, the methylated AUF1 p45(aDMA) exhibits a significantly increased affinity to the WNV RNA termini. Further data also revealed that the RNA chaperone activity of AUF1 p45(aDMA) is improved and the methylated protein stimulates viral RNA synthesis considerably more efficiently than the nonmethylated AUF1 p45. In addition to its destabilizing RNA chaperone activity, we identified an RNA annealing activity of AUF1 p45, which is not affected by methylation. Arginine methylation of AUF1 p45 thus represents a specific determinant of its RNA chaperone activity while functioning as a WNV host factor. Our data suggest that the methylation modifies the conformation of AUF1 p45 and in this way affects its RNA binding and restructuring activities. © 2016 Friedrich et al.; Published by Cold Spring Harbor Laboratory Press for the RNA Society.

  14. Advanced GaAs Process Modeling. Volume 1

    DTIC Science & Technology

    1989-05-01

    COSATI CODES 18 . SUBJECT TERMS (Continue on reverse if necessary and identify by block number) FIELD GROUP SUB-GROUP Gallium Arsenide, MESFET, Process...Background 9 3.2 Model Calculations 10 3.3 Conclusions 17 IV. ION-IMPLANTATION INTO GaAs PROFILE DETERMINATION 18 4.1 Ion Implantation Profile...Determination in GaAs 18 4.1.1. Background 18 4.1.2. Experimental Measurements 20 4.1.3. Results 22 4.1.3.1 Ion-Energy Dependence 22 4.1.3.2. Tilt and Rotation

  15. Ultrasensitive sensing with three-dimensional terahertz metamaterial absorber

    NASA Astrophysics Data System (ADS)

    Tan, Siyu; Yan, Fengping; Wang, Wei; Zhou, Hong; Hou, Yafei

    2018-05-01

    Planar metasurfaces and metamaterial absorbers have shown great promise for label-free sensing applications at microwaves, optical and terahertz frequencies. The realization of high-quality-factor resonance in these structures is of significant interest to enhance the sensing sensitivities to detect minute frequency shifts. We propose and demonstrate in this manuscript an ultrasensitive terahertz metamaterial absorber sensor based on a three-dimensional split ring resonator absorber with a high quality factor of 60.09. The sensing performance of the proposed absorber sensor was systematically investigated through detailed numerical calculations and a maximum refractive index sensitivity of 34.40% RIU‑1 was obtained. Furthermore, the absorber sensor can maintain a high sensitivity for a wide range of incidence angles up to 60° under TM polarization incidence. These findings would improve the design flexibility of the absorber sensors and further open up new avenues to achieve ultrasensitive sensing in the terahertz regime.

  16. Terahertz Lasers Reveal Information for 3D Images

    NASA Technical Reports Server (NTRS)

    2013-01-01

    After taking off her shoes and jacket, she places them in a bin. She then takes her laptop out of its case and places it in a separate bin. As the items move through the x-ray machine, the woman waits for a sign from security personnel to pass through the metal detector. Today, she was lucky; she did not encounter any delays. The man behind her, however, was asked to step inside a large circular tube, raise his hands above his head, and have his whole body scanned. If you have ever witnessed a full-body scan at the airport, you may have witnessed terahertz imaging. Terahertz wavelengths are located between microwave and infrared on the electromagnetic spectrum. When exposed to these wavelengths, certain materials such as clothing, thin metal, sheet rock, and insulation become transparent. At airports, terahertz radiation can illuminate guns, knives, or explosives hidden underneath a passenger s clothing. At NASA s Kennedy Space Center, terahertz wavelengths have assisted in the inspection of materials like insulating foam on the external tanks of the now-retired space shuttle. "The foam we used on the external tank was a little denser than Styrofoam, but not much," says Robert Youngquist, a physicist at Kennedy. The problem, he explains, was that "we lost a space shuttle by having a chunk of foam fall off from the external fuel tank and hit the orbiter." To uncover any potential defects in the foam covering, such as voids or air pockets, that could keep the material from staying in place, NASA employed terahertz imaging to see through the foam. For many years, the technique ensured the integrity of the material on the external tanks.

  17. Terahertz in-line digital holography of human hepatocellular carcinoma tissue

    PubMed Central

    Rong, Lu; Latychevskaia, Tatiana; Chen, Chunhai; Wang, Dayong; Yu, Zhengping; Zhou, Xun; Li, Zeyu; Huang, Haochong; Wang, Yunxin; Zhou, Zhou

    2015-01-01

    Terahertz waves provide a better contrast in imaging soft biomedical tissues than X-rays, and unlike X-rays, they cause no ionisation damage, making them a good option for biomedical imaging. Terahertz absorption imaging has conventionally been used for cancer diagnosis. However, the absorption properties of a cancerous sample are influenced by two opposing factors: an increase in absorption due to a higher degree of hydration and a decrease in absorption due to structural changes. It is therefore difficult to diagnose cancer from an absorption image. Phase imaging can thus be critical for diagnostics. We demonstrate imaging of the absorption and phase-shift distributions of 3.2 mm × 2.3 mm × 30-μm-thick human hepatocellular carcinoma tissue by continuous-wave terahertz digital in-line holography. The acquisition time of a few seconds for a single in-line hologram is much shorter than that of other terahertz diagnostic techniques, and future detectors will allow acquisition of meaningful holograms without sample dehydration. The resolution of the reconstructions was enhanced by sub-pixel shifting and extrapolation. Another advantage of this technique is its relaxed minimal sample size limitation. The fibrosis indicated in the phase distribution demonstrates the potential of terahertz holographic imaging to obtain a more objective, early diagnosis of cancer. PMID:25676705

  18. Rare-earth gate oxides for GaAs MOSFET application

    NASA Astrophysics Data System (ADS)

    Kwon, Kwang-Ho; Yang, Jun-Kyu; Park, Hyung-Ho; Kim, Jongdae; Roh, Tae Moon

    2006-08-01

    Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2O 3, (Gd xLa 1- x) 2O 3, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd xLa 1- x) 2O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2O 3. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2. Energy band parameters such as Δ EC, Δ EV, and Eg were effectively controlled by the film composition.

  19. Enhanced coherent terahertz beam with a photoconductive antenna containing a chaotic shape electrodes

    NASA Astrophysics Data System (ADS)

    Wu, Dong Ho; Kim, Christopher; Graber, Benjamin

    2014-03-01

    Photoconductive antenna is one of the most popular methods to produce a broadband terahertz beam. Our recent experiments indicate that a photoconductive antenna containing a pair of parallel micro-strip-line electrodes produces both incoherent and coherent terahertz beam. When we drive the antenna with a low bias voltage and a weak femto-second laser power, it produces mostly coherent terahertz beam. However, as the bias voltage and/or the femto-second laser power increase, the incoherent terahertz beam strength increases exponentially with the bias voltage.[1] When the bias voltage and/or the femto-second laser power exceeds critical values, heat associated with the incoherent beam eventually leads to a catastrophic antenna failure, resulting in a permanent damage on the antenna.[2] In order to improve our photoconductive antenna we have implemented a chaotic geometry in the photoconductive antenna's electrodes. Our experimental results show that the new antenna produces substantially more coherent terahertz beam and much less incoherent terahertz beam. We will present the details of our experimental results and discuss the merits of new antenna design. We will also examine some theory to understand our experimental results. Supported by DTRA.

  20. Failure Mechanisms of GaAs Transistors - A Literature Survey

    DTIC Science & Technology

    1990-03-01

    doping profile cannot be as sharp as with epitaxial methods. This is the result of the statistics of the implantation and the general diffusion that...Speed GaAs Logic Gates 5.1 GaAs PLANAR TRANSITOR STRUCTURES USED IN IC’S Some planar transistor structures used in IC’s with examples of the

  1. Active Terahertz Chiral Metamaterials Based on Phase Transition of Vanadium Dioxide (VO2).

    PubMed

    Wang, Shengxiang; Kang, Lei; Werner, Douglas H

    2018-01-09

    Compared with natural materials, chiral metamaterials have been demonstrated with orders of magnitude stronger chiroptical response, which provides the basis for applications such as ultracompact polarization components and plasmonic-enhanced biosensing. Terahertz chiral metamaterials that allow dynamic polarization control of terahertz waves are of great practical interest, but remain extremely rare. Here, we show that hybrid metamaterials integrated with vanadium dioxide (VO 2 ) exhibiting phase transition can enable dynamically tunable chiroptical responses at terahertz frequencies. In particular, a circular dichroism of ~40° and a maximum polarization rotation of ~200°/λ are observed around 0.7 THz. Furthermore, our study also reveals that the chiroptical response from the proposed metamaterials is strongly dependent on the phase transition of VO 2 , leading to actively controllable polarization states of the transmitted terahertz waves. This work paves the way for the development of terahertz metadevices capable of enabling active polarization manipulation.

  2. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    NASA Astrophysics Data System (ADS)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  3. [An effective method for improving the imaging spatial resolution of terahertz time domain spectroscopy system].

    PubMed

    Zhang, Zeng-yan; Ji, Te; Zhu, Zhi-yong; Zhao, Hong-wei; Chen, Min; Xiao, Ti-qiao; Guo, Zhi

    2015-01-01

    Terahertz radiation is an electromagnetic radiation in the range between millimeter waves and far infrared. Due to its low energy and non-ionizing characters, THz pulse imaging emerges as a novel tool in many fields, such as material, chemical, biological medicine, and food safety. Limited spatial resolution is a significant restricting factor of terahertz imaging technology. Near field imaging method was proposed to improve the spatial resolution of terahertz system. Submillimeter scale's spauial resolution can be achieved if the income source size is smaller than the wawelength of the incoming source and the source is very close to the sample. But many changes were needed to the traditional terahertz time domain spectroscopy system, and it's very complex to analyze sample's physical parameters through the terahertz signal. A method of inserting a pinhole upstream to the sample was first proposed in this article to improve the spatial resolution of traditional terahertz time domain spectroscopy system. The measured spatial resolution of terahertz time domain spectroscopy system by knife edge method can achieve spatial resolution curves. The moving stage distance between 10 % and 90 Yo of the maximum signals respectively was defined as the, spatial resolution of the system. Imaging spatial resolution of traditional terahertz time domain spectroscopy system was improved dramatically after inserted a pinhole with diameter 0. 5 mm, 2 mm upstream to the sample. Experimental results show that the spatial resolution has been improved from 1. 276 mm to 0. 774 mm, with the increment about 39 %. Though this simple method, the spatial resolution of traditional terahertz time domain spectroscopy system was increased from millimeter scale to submillimeter scale. A pinhole with diameter 1 mm on a polyethylene plate was taken as sample, to terahertz imaging study. The traditional terahertz time domain spectroscopy system and pinhole inserted terahertz time domain spectroscopy

  4. High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide

    PubMed Central

    Singh, P. K.; Sonkusale, S.

    2017-01-01

    This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306

  5. Phase-locking to a free-space terahertz comb for metrological-grade terahertz lasers.

    PubMed

    Consolino, L; Taschin, A; Bartolini, P; Bartalini, S; Cancio, P; Tredicucci, A; Beere, H E; Ritchie, D A; Torre, R; Vitiello, M S; De Natale, P

    2012-01-01

    Optical frequency comb synthesizers have represented a revolutionary approach to frequency metrology, providing a grid of frequency references for any laser emitting within their spectral coverage. Extending the metrological features of optical frequency comb synthesizers to the terahertz domain would be a major breakthrough, due to the widespread range of accessible strategic applications and the availability of stable, high-power and widely tunable sources such as quantum cascade lasers. Here we demonstrate phase-locking of a 2.5 THz quantum cascade laser to a free-space comb, generated in a LiNbO(3) waveguide and covering the 0.1-6 THz frequency range. We show that even a small fraction (<100 nW) of the radiation emitted from the quantum cascade laser is sufficient to generate a beat note suitable for phase-locking to the comb, paving the way to novel metrological-grade terahertz applications, including high-resolution spectroscopy, manipulation of cold molecules, astronomy and telecommunications.

  6. Photon counting microstrip X-ray detectors with GaAs sensors

    NASA Astrophysics Data System (ADS)

    Ruat, M.; Andrä, M.; Bergamaschi, A.; Barten, R.; Brückner, M.; Dinapoli, R.; Fröjdh, E.; Greiffenberg, D.; Lopez-Cuenca, C.; Lozinskaya, A. D.; Mezza, D.; Mozzanica, A.; Novikov, V. A.; Ramilli, M.; Redford, S.; Ruder, C.; Schmitt, B.; Shi, X.; Thattil, D.; Tinti, G.; Tolbanov, O. P.; Tyazhev, A.; Vetter, S.; Zarubin, A. N.; Zhang, J.

    2018-01-01

    High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.

  7. Single mode terahertz quantum cascade amplifier

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ren, Y., E-mail: yr235@cam.ac.uk; Wallis, R.; Shah, Y. D.

    2014-10-06

    A terahertz (THz) optical amplifier based on a 2.9 THz quantum cascade laser (QCL) structure has been demonstrated. By depositing an antireflective coating on the QCL facet, the laser mirror losses are enhanced to fully suppress the lasing action, creating a THz quantum cascade (QC) amplifier. Terahertz radiation amplification has been obtained, by coupling a separate multi-mode THz QCL of the same active region design to the QC amplifier. A bare cavity gain is achieved and shows excellent agreement with the lasing spectrum from the original QCL without the antireflective coating. Furthermore, a maximum optical gain of ∼30 dB with single-modemore » radiation output is demonstrated.« less

  8. Laser Induced Electrodeposition on Polyimide and GaAs Substrates

    DTIC Science & Technology

    1983-10-01

    6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

  9. Frequency-agile electromagnetically induced transparency analogue in terahertz metamaterials.

    PubMed

    Xu, Quan; Su, Xiaoqiang; Ouyang, Chunmei; Xu, Ningning; Cao, Wei; Zhang, Yuping; Li, Quan; Hu, Cong; Gu, Jianqiang; Tian, Zhen; Azad, Abul K; Han, Jiaguang; Zhang, Weili

    2016-10-01

    Recently reported active metamaterial analogues of electromagnetically induced transparency (EIT) are promising in developing novel optical components, such as active slow light devices. However, most of the previous works have focused on manipulating the EIT resonance strength at a fixed characteristic frequency and, therefore, realized on-to-off switching responses. To further extend the functionalities of the EIT effect, here we present a frequency tunable EIT analogue in the terahertz regime by integrating photoactive silicon into the metamaterial unit cell. A tuning range from 0.82 to 0.74 THz for the EIT resonance frequency is experimentally observed by optical pump-terahertz probe measurements, allowing a frequency tunable group delay of the terahertz pulses. This straightforward approach delivers frequency agility of the EIT resonance and may enable novel ultrafast tunable devices for integrated plasmonic circuits.

  10. Terahertz ptychography.

    PubMed

    Valzania, Lorenzo; Feurer, Thomas; Zolliker, Peter; Hack, Erwin

    2018-02-01

    We realized a phase retrieval technique using terahertz (THz) radiation as an alternative to THz digital holography, named THz ptychography. Ptychography has been used in x-ray imaging as a groundbreaking improvement of conventional coherent diffraction imaging. Here we show that ptychography can be performed at THz frequencies too. We reconstructed an amplitude and a phase object with both simulated and real data. Lateral resolution accounts to <2λ, while depth variations as low as λ/30 can be assessed.

  11. Investigation of ZnSe-coated silicon substrates for GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

    1993-01-01

    Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

  12. Pulse sequences for efficient multi-cycle terahertz generation in periodically poled lithium niobate.

    PubMed

    Ravi, Koustuban; Schimpf, Damian N; Kärtner, Franz X

    2016-10-31

    The use of laser pulse sequences to drive the cascaded difference frequency generation of high energy, high peak-power and multi-cycle terahertz pulses in cryogenically cooled (100 K) periodically poled Lithium Niobate is proposed and studied. Detailed simulations considering the coupled nonlinear interaction of terahertz and optical waves (or pump depletion), show that unprecedented optical-to-terahertz energy conversion efficiencies > 5%, peak electric fields of hundred(s) of mega volts/meter at terahertz pulse durations of hundred(s) of picoseconds can be achieved. The proposed methods are shown to circumvent laser induced damage limitations at Joule-level pumping by 1µm lasers to enable multi-cycle terahertz sources with pulse energies > 10 milli-joules. Various pulse sequence formats are proposed and analyzed. Numerical calculations for periodically poled structures accounting for cascaded difference frequency generation, self-phase-modulation, cascaded second harmonic generation and laser induced damage are introduced. The physics governing terahertz generation using pulse sequences in this high conversion efficiency regime, limitations and practical considerations are discussed. It is shown that varying the poling period along the crystal length and further reduction of absorption can lead to even higher energy conversion efficiencies >10%. In addition to numerical calculations, an analytic formulation valid for arbitrary pulse formats and closed-form expressions for important cases are presented. Parameters optimizing conversion efficiency in the 0.1-1 THz range, the corresponding peak electric fields, crystal lengths and terahertz pulse properties are furnished.

  13. Cathodoluminescence Characterization of Ion Implanted GaAs.

    DTIC Science & Technology

    1980-03-01

    technique that can be used to characterize the semiconductor device "in situ" before further processing can save the Air Force valuable time as well...Patterson Air Force Base,Ohio i! i ill i I ;Wow AFIT/DS/PH/80- I.i1I LEVELOO CATHODOLUMINESCENCE CHARACTERIZATION OF ION IPLANTED GaAs D I SSERUrAT ION...CATODOLUMINESCENCE CHARACTERIZATION .’ a .... OF ION IMPLANTED GaAs’ - .. .. Dtriy’ t’ c:’/ A’: t 1. - Cc;-,P by an i’or Milton L one B.S., M.S. Major USAF Approved

  14. Amplification in Double Heterostructure GaAs Lasers.

    DTIC Science & Technology

    1981-03-15

    done, for example, in the book by Siegman . When the laser signal which is to be amplified is a single mode, it is important to include the possibility...k A’AD-A097 862 AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAP) P 5 20/5 I AMPLIFICATION IN DOUBLE HETEROSTRUCTURE GAAS LASERS .(U IMAR al E...GARMIRE, M CHANG F04701-80-C-0081I UNCLASSIFIED TR GO81(6930 03)-2 SD-TA8-30 NL Amplification in Double Heterostructure GaAs Lasers E. GARMIRE nd M

  15. GaAs Surface Passivation for Device Applications.

    DTIC Science & Technology

    1981-12-01

    Ga203.’" . QI. a) / b) x 2.5 •• 24 21 18 As3d a) b) x 2. / 0 II 2 46 43 40 BINDING ENERGY (eV) Fig. 3 XPS spectra from a Ga2O3 covered GaAs surface of Ga...wU 24 21 Gas 18 SAs3d As2O3 ) .. 46 43 40 BINDING ENERGY (e) Fig. 4 XPS spectra from a AsJ03- Ga2O3 covered GaAs surface of Ga 3d (upper panel) and As

  16. Terahertz (THz) Radar: A Solution for Degraded Visibility Environments (DVE)

    DTIC Science & Technology

    2016-11-01

    TECHNICAL REPORT RDMR-WD-16-49 TERAHERTZ (THZ) RADAR: A SOLUTION FOR DEGRADED VISIBILITY ENVIRONMENTS (DVE) Henry O...Terahertz (THz) Radar: A Solution For Degraded Visibility Environments (DVE) 5. FUNDING NUMBERS 6. AUTHOR(S) Henry O. Everitt...to compensate for environmental conditions, allowing for actionable images in Degraded Visibility Environments (DVE). 14. SUBJECT TERMS Radar

  17. Birefringence of wood at terahertz frequencies

    NASA Astrophysics Data System (ADS)

    Todoruk, Tara M.; Schneider, Jon; Hartley, Ian D.; Reid, Matthew

    2008-06-01

    Fibre content of solid wood plays an important role in the wood products industry in terms of value. Additionally, fibre structure in composite wood products such as Oriented Strand Board (OSB) and paper products plays an important role in terms of strength properties. The effect of moisture content on wood properties is important in the manufacturing process and final product performance, and therefore its effect on the birefringence is of considerable interest. Since solid wood exhibits strong birefringence at terahertz frequencies, there may be potential applications of terahertz spectroscopy to fibre content and structure sensing. There are two potential sources for this strong birefringence: (i) form birefringence resulting from the porous structure of solid wood and (ii) intrinsic birefringence resulting from the dielectric properties of the material itself. In this report, the variability of birefringence within and between species, the dependence of the birefringence on moisture content and the relative contributions from form and intrinsic birefringence are examined. In order to clarify the role of these contributions to the measured birefringence, polarized terahertz reflection spectroscopy is examined and compared to the results obtained in a transmission geometry. Comparison of the birefringence measured in transmission and reflection geometries suggests that form birefringence may dominate.

  18. Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Kang, C. H.; Skowronski, M.; Ko, K. Y.

    1986-01-01

    A new type of GaAs is developed which exhibits inverted thermal conversion (ITC); i.e., it converts from conducting to semiinsulating upon annealing at about 850 C. In device fabrication, its low resistivity prior to high-temperature processing differentiates ITC GaAs from the standard semiinsulating GaAs. The ITC characteristics are obtained through control of the concentration of the midgap donor EL2 based on heat treatment and crystal-growth modification. Thus EL2 does not exist in the conducting state of ITC GaAs. Conversion to the semiinsulating state during 850 C annealing is caused by the formation of EL2.

  19. Brewster's angle silicon wafer terahertz linear polarizer.

    PubMed

    Wojdyla, Antoine; Gallot, Guilhem

    2011-07-18

    We present a new cost-effective terahertz linear polarizer made from a stack of silicon wafers at Brewster's angle, andevaluate its performances. We show that this polarizer is wide-band, has a high extinction ratio (> 6 × 10(3)) and very small insertion losses (< 1%). We provide measurements of the temporal waveforms after linearly polarizing the THz beam and show that there is no distortion of the pulse. We compare its performances with a commercial wire-grid polarizer, and show that the Brewster's angle polarizer can conveniently be used to control the power of a terahertz beam.

  20. Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates

    NASA Astrophysics Data System (ADS)

    Yen, M. Y.; Haas, T. W.

    1990-06-01

    We have observed intensity oscillations in reflection high-energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

  1. Invisible Security Printing on Photoresist Polymer Readable by Terahertz Spectroscopy.

    PubMed

    Shin, Hee Jun; Lim, Min-Cheol; Park, Kisang; Kim, Sae-Hyung; Choi, Sung-Wook; Ok, Gyeongsik

    2017-12-06

    We experimentally modulate the refractive index and the absorption coefficient of an SU-8 dry film in the terahertz region by UV light (362 nm) exposure with time dependency. Consequently, the refractive index of SU-8 film is increased by approximately 6% after UV light exposure. Moreover, the absorption coefficient also changes significantly. Using the reflective terahertz imaging technique, in addition, we can read security information printed by UV treatment on an SU-8 film that is transparent in the visible spectrum. From these results, we successfully demonstrate security printing and reading by using photoresist materials and the terahertz technique. This investigation would provide a new insight into anti-counterfeiting applications in fields that need security.

  2. Temperature Dependence in the Terahertz Spectrum of Nicotinamide: Anharmonicity and Hydrogen-Bonded Network.

    PubMed

    Takahashi, Masae; Okamura, Nubuyuki; Fan, Xinyi; Shirakawa, Hitoshi; Minamide, Hiroaki

    2017-04-06

    We have investigated the terahertz-spectral property of nicotinamide focusing on the temperature dependence in the range of 14-300 K. We observed that almost all peaks in the terahertz spectrum of the nicotinamide crystal showed a remarkable shift with temperature, whereas the lowest-frequency peak at 34.8 cm -1 showed a negligible shift with temperature. By analyzing the terahertz spectrum with the dispersion-corrected density functional theory calculations, we found that the difference in the temperature dependence of the peak shift is well understood in terms of the presence/absence of stretching vibration of the intermolecular hydrogen bond in the mode and the change of cell parameters. The anharmonicity in the dissociation potential energy of very weak intermolecular hydrogen bonding causes the remarkable peak shift with temperature in the terahertz spectrum of nicotinamide. This finding suggests that the assignment and identification of peaks in the terahertz spectrum are systematically enabled by temperature-dependent measurements.

  3. Tunable terahertz wave generation through a bimodal laser diode and plasmonic photomixer.

    PubMed

    Yang, S-H; Watts, R; Li, X; Wang, N; Cojocaru, V; O'Gorman, J; Barry, L P; Jarrahi, M

    2015-11-30

    We demonstrate a compact, robust, and stable terahertz source based on a novel two section digital distributed feedback laser diode and plasmonic photomixer. Terahertz wave generation is achieved through difference frequency generation by pumping the plasmonic photomixer with two output optical beams of the two section digital distributed feedback laser diode. The laser is designed to offer an adjustable terahertz frequency difference between the emitted wavelengths by varying the applied currents to the laser sections. The plasmonic photomixer is comprised of an ultrafast photoconductor with plasmonic contact electrodes integrated with a logarithmic spiral antenna. We demonstrate terahertz wave generation with 0.15-3 THz frequency tunability, 2 MHz linewidth, and less than 5 MHz frequency stability over 1 minute, at useful power levels for practical imaging and sensing applications.

  4. Terahertz NDE for Under Paint Corrosion Detection and Evaluation

    NASA Technical Reports Server (NTRS)

    Anastasi, Robert F.; Madaras, Eric I.

    2005-01-01

    Corrosion under paint is not visible until it has caused paint to blister, crack, or chip. If corrosion is allowed to continue then structural problems may develop. Identifying corrosion before it becomes visible would minimize repairs and costs and potential structural problems. Terahertz NDE imaging under paint for corrosion is being examined as a method to inspect for corrosion by examining the terahertz response to paint thickness and to surface roughness.

  5. Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

    NASA Astrophysics Data System (ADS)

    Yeh, Hsi-Jen J.; Smith, John S.

    1994-03-01

    The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

  6. Chaperone Hsp27 Modulates AUF1 Proteolysis and AU-Rich Element-Mediated mRNA Degradation▿

    PubMed Central

    Knapinska, Anna M.; Gratacós, Frances M.; Krause, Christopher D.; Hernandez, Kristina; Jensen, Amber G.; Bradley, Jacquelyn J.; Wu, Xiangyue; Pestka, Sidney; Brewer, Gary

    2011-01-01

    AUF1 is an AU-rich element (ARE)-binding protein that recruits translation initiation factors, molecular chaperones, and mRNA degradation enzymes to the ARE for mRNA destruction. We recently found chaperone Hsp27 to be an AUF1-associated ARE-binding protein required for tumor necrosis factor alpha (TNF-α) mRNA degradation in monocytes. Hsp27 is a multifunctional protein that participates in ubiquitination of proteins for their degradation by proteasomes. A variety of extracellular stimuli promote Hsp27 phosphorylation on three serine residues—Ser15, Ser78, and Ser82—by a number of kinases, including the mitogen-activated protein (MAP) pathway kinases p38 and MK2. Activating either kinase stabilizes ARE mRNAs. Likewise, ectopic expression of phosphomimetic mutant forms of Hsp27 stabilizes reporter ARE mRNAs. Here, we continued to examine the contributions of Hsp27 to mRNA degradation. As AUF1 is ubiquitinated and degraded by proteasomes, we addressed the hypothesis that Hsp27 phosphorylation controls AUF1 levels to modulate ARE mRNA degradation. Indeed, selected phosphomimetic mutants of Hsp27 promote proteolysis of AUF1 in a proteasome-dependent fashion and render ARE mRNAs more stable. Our results suggest that the p38 MAP kinase (MAPK)-MK2–Hsp27 signaling axis may target AUF1 destruction by proteasomes, thereby promoting ARE mRNA stabilization. PMID:21245386

  7. [The Lambert-Beer's law characterization of formal analysis in Terahertz spectrum quantitative testing].

    PubMed

    Su, Hai-Xia; Zhang, Zhao-Hui; Zhao, Xiao-Yan; Li, Zhi; Yan, Fang; Zhang, Han

    2013-12-01

    The present paper discusses the Lambert-Beer' s law application in the terahertz spectrum, studies the single amino acid tablet sample (glutamine) and two kinds of amino acids mixture tablet (threonine and cystine) under the condition of different concentrations. Absorbance and absorption coefficient was analyzed in the description of the terahertz optical properties of matter. By comparing absorption coefficient and absorbance value of the single component in the vicinity of 1. 72 THz, we verified the material under two kinds of absorption characterization of quantity of THz wave absorption along with the change in the concentration. Using the index of goodness of fit R , it studied the stand or fall of linear relationship between the terahertz absorption quantity of material and concentration under two kinds of representation. This paper analyzes the two components mixture under two kinds of absorption characterization of quantity of terahertz absorption in 0. 3-2. 6 THz. Using the similarity co- efficient and the estimate concentration error as evaluation index, it has been clear that the absorbance of additivity instead of the absorption coefficient should be used during the terahertz spectrum quantitative test, and the Lambert-Beer's law application in the terahertz wave band was further clarified.

  8. Spectroscopic Study of Terahertz Generation in Mid-Infrared Quantum Cascade Lasers.

    PubMed

    Jiang, Yifan; Vijayraghavan, Karun; Jung, Seungyong; Jiang, Aiting; Kim, Jae Hyun; Demmerle, Frederic; Boehm, Gerhard; Amann, Markus C; Belkin, Mikhail A

    2016-02-16

    Terahertz quantum cascade laser sources based on intra-cavity difference-frequency generation are currently the only room-temperature mass-producible diode-laser-like emitters of coherent 1-6 THz radiation. Device performance has improved dramatically over the past few years to reach milliwatt-level power output and broad tuning from 1.2 to 5.9 THz, all at room-temperature. Terahertz output in these sources originates from intersubband optical nonlinearity in the laser active region. Here we report the first comprehensive spectroscopic study of the optical nonlinearity and investigate its dependence on the mid-infrared pump frequencies. Our work shows that the terahertz generation efficiency can vary by a factor of 2 or greater depending on the spectral position of the mid-infrared pumps for a fixed THz difference-frequency. We have also measured for the first time the linewidth for transitions between the lower quantum cascade laser states, which is critical for determining terahertz nonlinearity and predicting optical loss in quantum cascade laser waveguides.

  9. Terahertz spectroscopy and computational investigation of the flufenamic acid/nicotinamide cocrystal.

    PubMed

    Delaney, Sean P; Korter, Timothy M

    2015-04-02

    Terahertz spectroscopy probes the low-frequency vibrations that are sensitive to both the intermolecular and intramolecular interactions of molecules in the solid state. Thus, terahertz spectroscopy can be a useful tool in the investigation of crystalline pharmaceutical compounds, where slight changes in the packing arrangement can modify the overall effectiveness of a drug formulation. This is especially true for cases of polymorphic systems, hydrates/solvates, and cocrystals. In this work, the cocrystal of flufenamic acid with nicotinamide was investigated using terahertz spectroscopy and solid-state density functional theory. The solid-state simulations enable understanding of the low-frequency vibrations seen in the terahertz spectra, while also providing insight into the energetics involved in the formation of the cocrystal. The comparison of the cocrystal to the pure forms of the molecular components reveals that the cocrystal has better overall binding energy, driven by increased intermolecular hydrogen bond strength and greater London dispersion forces and that the trifluoromethyl torsional potential is significantly different between the studied solids.

  10. Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

    DTIC Science & Technology

    1995-10-05

    improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

  11. Terahertz reflection interferometry for automobile paint layer thickness measurement

    NASA Astrophysics Data System (ADS)

    Rahman, Aunik; Tator, Kenneth; Rahman, Anis

    2015-05-01

    Non-destructive terahertz reflection interferometry offers many advantages for sub-surface inspection such as interrogation of hidden defects and measurement of layers' thicknesses. Here, we describe a terahertz reflection interferometry (TRI) technique for non-contact measurement of paint panels where the paint is comprised of different layers of primer, basecoat, topcoat and clearcoat. Terahertz interferograms were generated by reflection from different layers of paints on a metallic substrate. These interferograms' peak spacing arising from the delay-time response of respective layers, allow one to model the thicknesses of the constituent layers. Interferograms generated at different incident angles show that the interferograms are more pronounced at certain angles than others. This "optimum" angle is also a function of different paint and substrate combinations. An automated angular scanning algorithm helps visualizing the evolution of the interferograms as a function of incident angle and also enables the identification of optimum reflection angle for a given paint-substrate combination. Additionally, scanning at different points on a substrate reveals that there are observable variations from one point to another of the same sample over its entire surface area. This ability may be used as a quality control tool for in-situ inspection in a production line. Keywords: Terahertz reflective interferometry, Paint and coating layers, Non-destructive

  12. The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model.

    PubMed

    Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; Te Riele, Hein; Pook, Mark A

    2012-04-01

    Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. Copyright © 2012 Elsevier Inc. All rights reserved.

  13. The mismatch repair system protects against intergenerational GAA repeat instability in a Friedreich ataxia mouse model

    PubMed Central

    Ezzatizadeh, Vahid; Pinto, Ricardo Mouro; Sandi, Chiranjeevi; Sandi, Madhavi; Al-Mahdawi, Sahar; te Riele, Hein; Pook, Mark A.

    2013-01-01

    Friedreich ataxia (FRDA) is an autosomal recessive neurodegenerative disorder caused by a dynamic GAA repeat expansion mutation within intron 1 of the FXN gene. Studies of mouse models for other trinucleotide repeat (TNR) disorders have revealed an important role of mismatch repair (MMR) proteins in TNR instability. To explore the potential role of MMR proteins on intergenerational GAA repeat instability in FRDA, we have analyzed the transmission of unstable GAA repeat expansions from FXN transgenic mice which have been crossed with mice that are deficient for Msh2, Msh3, Msh6 or Pms2. We find in all cases that absence of parental MMR protein not only maintains transmission of GAA expansions and contractions, but also increases GAA repeat mutability (expansions and/or contractions) in the offspring. This indicates that Msh2, Msh3, Msh6 and Pms2 proteins are not the cause of intergenerational GAA expansions or contractions, but act in their canonical MMR capacity to protect against GAA repeat instability. We further identified differential modes of action for the four MMR proteins. Thus, Msh2 and Msh3 protect against GAA repeat contractions, while Msh6 protects against both GAA repeat expansions and contractions, and Pms2 protects against GAA repeat expansions and also promotes contractions. Furthermore, we detected enhanced occupancy of Msh2 and Msh3 proteins downstream of the FXN expanded GAA repeat, suggesting a model in which Msh2/3 dimers are recruited to this region to repair mismatches that would otherwise produce intergenerational GAA contractions. These findings reveal substantial differences in the intergenerational dynamics of expanded GAA repeat sequences compared with expanded CAG/CTG repeats, where Msh2 and Msh3 are thought to actively promote repeat expansions. PMID:22289650

  14. Oxygen in GaAs - Direct and indirect effects

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Skowronski, M.; Pawlowicz, L.; Lagowski, J.

    1984-01-01

    Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

  15. Sub-wavelength terahertz beam profiling of a THz source via an all-optical knife-edge technique.

    PubMed

    Phing, Sze Ho; Mazhorova, Anna; Shalaby, Mostafa; Peccianti, Marco; Clerici, Matteo; Pasquazi, Alessia; Ozturk, Yavuz; Ali, Jalil; Morandotti, Roberto

    2015-02-25

    Terahertz technologies recently emerged as outstanding candidates for a variety of applications in such sectors as security, biomedical, pharmaceutical, aero spatial, etc. Imaging the terahertz field, however, still remains a challenge, particularly when sub-wavelength resolutions are involved. Here we demonstrate an all-optical technique for the terahertz near-field imaging directly at the source plane. A thin layer (<100 nm-thickness) of photo carriers is induced on the surface of the terahertz generation crystal, which acts as an all-optical, virtual blade for terahertz near-field imaging via a knife-edge technique. Remarkably, and in spite of the fact that the proposed approach does not require any mechanical probe, such as tips or apertures, we are able to demonstrate the imaging of a terahertz source with deeply sub-wavelength features (<30 μm) directly in its emission plane.

  16. Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Hughes, Steven; Citrin, David

    1998-01-01

    We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

  17. Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

    1985-01-01

    The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

  18. GaAs Spectrometer for Electron Spectroscopy at Europa

    NASA Astrophysics Data System (ADS)

    Lioliou, G.; Barnett, A. M.

    2016-12-01

    We propose a GaAs based electron spectrometer for a hypothetical future mission orbiting Europa. Previous observations at Europa's South Pole with the Hubble Space Telescope of hydrogen Lyman-α and oxygen OI 130.4 nm emissions were consistent with water vapor plumes [Roth et al., 2014, Science 343, 171]. Future observations and analysis of plumes on Europa could provide information about its subsurface structure and the distribution of liquid water within its icy shells [Rhoden at al. 2015, Icarus 253, 169]. In situ low energy (1keV - 100keV) electron spectroscopy along with UV imaging either in situ or with the Hubble Space Telescope Wide Field Camera 3 or similar would allow verification of the auroral observations being due to electron impact excitation of water vapor plumes. The proposed spectrometer includes a novel GaAs p+-i-n+ photodiode and a custom-made charge-sensitive preamplifier. The use of an early prototype GaAs detector for direct electron spectroscopy has already been demonstrated in ground based applications [Barnett et al., 2012, J. Instrum. 7, P09012]. Based on previous radiation hardness measurements of GaAs, the expected duration of the mission without degradation of the detector performance is estimated to be 4 months. Simulations and laboratory experiments characterising the detection performance of the proposed system are presented.

  19. Hybrid metasurface for ultra-broadband terahertz modulation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.

    2014-11-05

    We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

  20. The application of terahertz pulsed imaging in characterising density distribution of roll-compacted ribbons.

    PubMed

    Zhang, Jianyi; Pei, Chunlei; Schiano, Serena; Heaps, David; Wu, Chuan-Yu

    2016-09-01

    Roll compaction is a commonly used dry granulation process in pharmaceutical, fine chemical and agrochemical industries for materials sensitive to heat or moisture. The ribbon density distribution plays an important role in controlling properties of granules (e.g. granule size distribution, porosity and strength). Accurate characterisation of ribbon density distribution is critical in process control and quality assurance. The terahertz imaging system has a great application potential in achieving this as the terahertz radiation has the ability to penetrate most of the pharmaceutical excipients and the refractive index reflects variations in density and chemical compositions. The aim of this study is to explore whether terahertz pulse imaging is a feasible technique for quantifying ribbon density distribution. Ribbons were made of two grades of microcrystalline cellulose (MCC), Avicel PH102 and DG, using a roll compactor at various process conditions and the ribbon density variation was investigated using terahertz imaging and section methods. The density variations obtained from both methods were compared to explore the reliability and accuracy of the terahertz imaging system. An average refractive index is calculated from the refractive index values in the frequency range between 0.5 and 1.5THz. It is shown that the refractive index gradually decreases from the middle of the ribbon towards to the edges. Variations of density distribution across the width of the ribbons are also obtained using both the section method and the terahertz imaging system. It is found that the terahertz imaging results are in excellent agreement with that obtained using the section method, demonstrating that terahertz imaging is a feasible and rapid tool to characterise ribbon density distributions. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Photo-recovery of electron-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Meulenberg, Andrew

    1995-01-01

    The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has produced some unexpected and important results. Two results, independent of the coverslide coatings, are of particular importance in terms of the predictability of GaAs solar-array lifetime in space: ( 1) The GaAs/Ge solar cells used for this series of tests displayed a much higher radiation degradation than that predicted based on JPL Solar Cell Radiation Handbook data. Covered cells degraded more in Isc than did bare cells. Short-term illumination at 60 C did not produce significant recovery (-1%) of the radiation damage. (2) However, electron radiation damage to these GaAs solar celIs anneals at 40 C when exposed to approximately 1 sun AM0 UV light sources for extended periods. The effect appears to be roughly linear with time (-1% of lsc per 1000 UVSH), is large (greater than or equal to 3%), and has not yet saturated (at 3000 hours). This photo-recovery of radiation damage to GaAs solar cells is a new effect and potentially important to the spacecraft community. The figure compares the effects of extended UV on irradiated and unirradiated GaAs solar cells with INTELSAT-6 Si cells. The effect and its generality, the extent of and conditions for photo-recovery, and the implications of such recovery for missions in radiation environments have not yet been determined.

  2. Defect interactions in GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1984-01-01

    The two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.

  3. Terahertz microfluidic chips for detection of amino acids in aqueous solutions

    NASA Astrophysics Data System (ADS)

    Su, Bo; Zhang, Cong; Fan, Ning; Zhang, Cunlin

    2016-11-01

    Microfluidic technology can control the fluidic thickness accurately in less than 100 micrometers. So the combination of terahertz (THz) and microfluidic technology becomes one of the most interesting directions towards biological detection. We designed microfluidic chips for terahertz spectroscopy of biological samples in aqueous solutions. Using the terahertz time-domain spectroscopy (THz-TDS) system, we experimentally measured the transmittance of the chips and the THz absorption spectra of L-threonine and L-arginine, respectively. The results indicated the feasibility of performing high sensitivity THz spectroscopy of amino acids solutions. Therefore, the microfluidic chips can realize real-time and label-free measurement for biochemistry samples in THz-TDS system.

  4. Characteristic analysis of a photoexcited metamaterial perfect absorber at terahertz frequencies

    NASA Astrophysics Data System (ADS)

    Bing, Pibin; Huang, Shichao; Li, Zhongyang; Yu, Zhou; Lu, Ying; Yao, Jianquan

    2017-06-01

    The absorption characteristics of a photoexcited metamaterial absorber at terahertz frequencies were analyzed in this study. Filling photosensitive semiconductor silicon into the gap between the resonator arms leads to modulation of its electromagnetic response through a pump beam which changes conductivity of silicon. Comparisons of terahertz absorbing properties which were caused by different thicknesses and dielectric constants of polyimide, cell sizes and widths of SRRs, and lengths and conductivities of the photosensitive silicon, were studied by using Finite Difference Time Domain (FDTD) from 0.4 THz to 1.6 THz. The results of this study will facilitate the design and preparation of terahertz modulator, filters and absorbers.

  5. Flexible manipulation of terahertz wave reflection using polarization insensitive coding metasurfaces.

    PubMed

    Jiu-Sheng, Li; Ze-Jiang, Zhao; Jian-Quan, Yao

    2017-11-27

    In order to extend to 3-bit encoding, we propose notched-wheel structures as polarization insensitive coding metasurfaces to control terahertz wave reflection and suppress backward scattering. By using a coding sequence of "00110011…" along x-axis direction and 16 × 16 random coding sequence, we investigate the polarization insensitive properties of the coding metasurfaces. By designing the coding sequences of the basic coding elements, the terahertz wave reflection can be flexibly manipulated. Additionally, radar cross section (RCS) reduction in the backward direction is less than -10dB in a wide band. The present approach can offer application for novel terahertz manipulation devices.

  6. Terahertz detection and carbon nanotubes

    ScienceCinema

    Leonard, Francois

    2018-04-16

    Researchers at Sandia National Laboratories, along with collaborators from Rice University and the Tokyo Institute of Technology, are developing new terahertz detectors based on carbon nanotubes that could lead to significant improvements in medical imaging, airport passenger screening, food inspection and other applications.

  7. Terahertz detection and carbon nanotubes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Leonard, Francois

    2014-06-11

    Researchers at Sandia National Laboratories, along with collaborators from Rice University and the Tokyo Institute of Technology, are developing new terahertz detectors based on carbon nanotubes that could lead to significant improvements in medical imaging, airport passenger screening, food inspection and other applications.

  8. Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Awari, N.; University of Groningen, 9747 AG Groningen; Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie

    2016-07-18

    Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

  9. Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission

    NASA Astrophysics Data System (ADS)

    Makhov, I. S.; Panevin, V. Yu; Firsov, D. A.; Vorobjev, L. E.; Sofronov, A. N.; Vinnichenko, M. Ya; Maleev, N. A.; Vasil'ev, A. P.

    2018-03-01

    Terahertz and near-infrared photoluminescence under conditions of interband stimulated emission are studied in n-GaAs/AlGaAs quantum well laser structure. The observed terahertz emission is related to the optical transitions of nonequilibrium electrons from the first electron subband and excited donor states to donor ground states in quantum wells. The opportunity to increase the intensity of impurity-assisted terahertz emission due to interband stimulated emission with the participation of impurity centres is demonstrated.

  10. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.

    PubMed

    Ren, Shenqiang; Zhao, Ni; Crawford, Samuel C; Tambe, Michael; Bulović, Vladimir; Gradecak, Silvija

    2011-02-09

    We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structural ordering within the active layer that enhances charge transport. Coating the GaAs nanowires with TiO(x) shells passivates nanowire surface states and further improves the photovoltaic performance. We find that the P3HT/nanowire cells yield power conversion efficiencies of 2.36% under white LED illumination for devices containing 50 wt % of TiO(x)-coated GaAs nanowires. Our results constitute important progress for the use of nanowires in large area solution processed hybrid photovoltaic cells and provide insight into the role of structural ordering in the device performance.

  11. Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites.

    PubMed

    Chanana, Ashish; Liu, Xiaojie; Zhang, Chuang; Vardeny, Zeev Valy; Nahata, Ajay

    2018-05-01

    The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices.

  12. Dynamic Gesture Recognition with a Terahertz Radar Based on Range Profile Sequences and Doppler Signatures

    PubMed Central

    Pi, Yiming

    2017-01-01

    The frequency of terahertz radar ranges from 0.1 THz to 10 THz, which is higher than that of microwaves. Multi-modal signals, including high-resolution range profile (HRRP) and Doppler signatures, can be acquired by the terahertz radar system. These two kinds of information are commonly used in automatic target recognition; however, dynamic gesture recognition is rarely discussed in the terahertz regime. In this paper, a dynamic gesture recognition system using a terahertz radar is proposed, based on multi-modal signals. The HRRP sequences and Doppler signatures were first achieved from the radar echoes. Considering the electromagnetic scattering characteristics, a feature extraction model is designed using location parameter estimation of scattering centers. Dynamic Time Warping (DTW) extended to multi-modal signals is used to accomplish the classifications. Ten types of gesture signals, collected from a terahertz radar, are applied to validate the analysis and the recognition system. The results of the experiment indicate that the recognition rate reaches more than 91%. This research verifies the potential applications of dynamic gesture recognition using a terahertz radar. PMID:29267249

  13. Dynamic Gesture Recognition with a Terahertz Radar Based on Range Profile Sequences and Doppler Signatures.

    PubMed

    Zhou, Zhi; Cao, Zongjie; Pi, Yiming

    2017-12-21

    The frequency of terahertz radar ranges from 0.1 THz to 10 THz, which is higher than that of microwaves. Multi-modal signals, including high-resolution range profile (HRRP) and Doppler signatures, can be acquired by the terahertz radar system. These two kinds of information are commonly used in automatic target recognition; however, dynamic gesture recognition is rarely discussed in the terahertz regime. In this paper, a dynamic gesture recognition system using a terahertz radar is proposed, based on multi-modal signals. The HRRP sequences and Doppler signatures were first achieved from the radar echoes. Considering the electromagnetic scattering characteristics, a feature extraction model is designed using location parameter estimation of scattering centers. Dynamic Time Warping (DTW) extended to multi-modal signals is used to accomplish the classifications. Ten types of gesture signals, collected from a terahertz radar, are applied to validate the analysis and the recognition system. The results of the experiment indicate that the recognition rate reaches more than 91%. This research verifies the potential applications of dynamic gesture recognition using a terahertz radar.

  14. Micro-optical coherence tomography tracking of magnetic gene transfection via Au-Fe3O4 dumbbell nanoparticles

    NASA Astrophysics Data System (ADS)

    Shi, Wei; Liu, Xinyu; Wei, Chao; Xu, Zhichuan J.; Sim, Stanley Siong Wei; Liu, Linbo; Xu, Chenjie

    2015-10-01

    Heterogeneous Au-Fe3O4 dumbbell nanoparticles (NPs) are composed of Au NPs and Fe3O4 NPs that bring in optical and magnetic properties respectively. This article reports the engineering of Au-Fe3O4 NPs as gene carriers for magnetic gene transfection as well as contrast agents for micro-optical coherence tomography (μOCT). As a proof-of-concept, Au-Fe3O4 NPs are used to deliver the green fluorescent protein to HEK 293T cells and their entrance into the cells is monitored through μOCT.Heterogeneous Au-Fe3O4 dumbbell nanoparticles (NPs) are composed of Au NPs and Fe3O4 NPs that bring in optical and magnetic properties respectively. This article reports the engineering of Au-Fe3O4 NPs as gene carriers for magnetic gene transfection as well as contrast agents for micro-optical coherence tomography (μOCT). As a proof-of-concept, Au-Fe3O4 NPs are used to deliver the green fluorescent protein to HEK 293T cells and their entrance into the cells is monitored through μOCT. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05459a

  15. Detection of Ionic liquid using terahertz time-domain spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, Cuicui; Zhao, Xiaojing; Liu, Shangjian; Zuo, Jian; Zhang, Cunlin

    2018-01-01

    Terahertz (THz, THz+1012Hz) spectroscopy is a far-infrared analytical technology with spectral bands locating between microware and infrared ranges. Being of excellent transmission, non-destruction and high discrimination, this technology has been applied in various fields such as physics, chemistry, nondestructive detection, communication, biomedicine public security. Terahertz spectrum is corresponding with vibration and rotation of liquid molecules, which is suitable to identify and study the liquid molecular dynamics. It is as a powerful spectral detection technology, terahertz time-domain spectroscopy is widely used in solution detection. can enable us to extract the material parameters or dielectric spectrum that show material micro-structure and dynamics by measuring amplitude and phase from coherent terahertz pulses. Ionic liquid exists in most biological tissues, and it is very important for life. It has recently been suggested that near-fired terahertz ionic contrast microscopy can be employed to image subtle changes in ionic concentrations arising from neuronal activity. In this paper, we detected Ionic liquid with different concentrations at room temperature by THz-TDS technique in the range of 0.2-1.5 THz. The liquid cell with a thickness of 0.2mm is made of quartz. The absorption coefficient, refractive index and dielectric function of solutions can be extracted based on THz-TDS. We use an expanded model for fitting the dielectric function based on a combination of a Debye relation for the anions and cations. We find A linear increase of the real and imaginary part of the dielectric function compared with pure water with increasing ion concentrations. A good agreement between the model and the experimental results is obtained. By means of dielectric relaxation process, it was found that the characteristic time of molecular movement and the information related to the liquid molecular structure and movement was obtained.

  16. GaAs QWIP Array Containing More Than a Million Pixels

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

    2005-01-01

    A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

  17. Spin-lattice relaxation of optically polarized nuclei in p -type GaAs

    NASA Astrophysics Data System (ADS)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Cherbunin, R. V.; Sokolov, P. S.; Yakovlev, D. R.; Bayer, M.; Suter, D.; Kavokin, K. V.

    2018-04-01

    Spin-lattice relaxation of the nuclear spin system in p -type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time T1 of optically pumped nuclei "in the dark," that is, in the absence of illumination. The measured T1 values fall into the subsecond time range, being three orders of magnitude shorter than in earlier studied n -type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependencies of T1 in p -GaAs, showing no similarity to those in n -GaAs. This unexpected behavior finds its explanation in the spatial selectivity of the optical pumping in p -GaAs, that is only efficient in the vicinity of shallow donors, together with the quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs. The developed theoretical model explains the whole set of experimental results.

  18. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

    2010-12-01

    Molecular-Beam Epitaxy growth of multiple In 0.4Ga 0.6As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4Ga 0.6As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4Ga 0.6As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

  19. Controlling Propagation Properties of Surface Plasmon Polariton at Terahertz Frequency

    NASA Astrophysics Data System (ADS)

    Gupta, Barun

    Despite great scientific exploration since the 1900s, the terahertz range is one of the least explored regions of electromagnetic spectrum today. In the field of plasmonics, texturing and patterning allows for control over electromagnetic waves bound to the interface between a metal and the adjacent dielectric medium. The surface plasmon-polaritons (SPPs) display unique dispersion characteristics that depend upon the plasma frequency of the medium. In the long wavelength regime, where metals are highly conductive, such texturing can create an effective medium that can be characterized by an effective plasma frequency that is determined by the geometrical parameters of the surface structure. The terahertz (THz) spectral range offers unique opportunities to utilize such materials. This thesis describes a number of terahertz plasmonic devices, both passive and active, fabricated using different techniques. As an example, inkjet printing is exploited for fabricating two-dimensional plasmonic devices. In this case, we demonstrated the terahertz plasmonic structures in which the conductivity of the metallic film is varied spatially in order to further control the plasmonic response. Using a commercially available inkjet printers, in which one cartridge is filled with conductive silver ink and a second cartridge is filled with resistive carbon ink, computer generated drawings of plasmonic structures are printed in which the individual printed dots can have differing amounts of the two inks, thereby creating a spatial variation in the conductivity. The inkjet printing technique is limited to the two-dimensional structurers. In order to expand the capability of printing complex terahertz devices, which cannot otherwise be fabricated using standard fabricating techniques, we employed 3D printing techniques. 3D printing techniques using polymers to print out the complex structures. In the realm of active plasmonic devices, a wide range of innovative approaches have been

  20. Compare the phase transition properties of VO2 films from infrared to terahertz range

    NASA Astrophysics Data System (ADS)

    Liang, Shan; Shi, Qiwu; Huang, Wanxia; Peng, Bo; Mao, Zhenya; Zhu, Hongfu

    2018-06-01

    VO2 with reversible semiconductor-metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO2 films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO2 film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO2 film. Moreover, it presents that the phase transition intensity of VO2 film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO2 to its microstructure. And it can provide insights for the applications of VO2 in terahertz smart devices.

  1. Etude de la dynamique des porteurs dans des nanofils de silicium par spectroscopie terahertz

    NASA Astrophysics Data System (ADS)

    Beaudoin, Alexandre

    Ce memoire presente une etude des proprietes de conduction electrique et de la dynamique temporelle des porteurs de charges dans des nanofils de silicium sondes par rayonnement terahertz. Les cas de nanofils de silicium non intentionnellement dopes et dopes type n sont compares pour differentes configurations du montage experimental. Les mesures de spectroscopie terahertz en transmission montre qu'il est possible de detecter la presence de dopants dans les nanofils via leur absorption du rayonnement terahertz (˜ 1--12 meV). Les difficultes de modelisation de la transmission d'une impulsion electromagnetique dans un systeme de nanofils sont egalement discutees. La detection differentielle, une modification au systeme de spectroscopie terahertz, est testee et ses performances sont comparees au montage de caracterisation standard. Les instructions et des recommendations pour la mise en place de ce type de mesure sont incluses. Les resultats d'une experience de pompe optique-sonde terahertz sont egalement presentes. Dans cette experience, les porteurs de charge temporairement crees suite a l'absorption de la pompe optique (lambda ˜ 800 nm) dans les nanofils (les photoporteurs) s'ajoutent aux porteurs initialement presents et augmentent done l'absorption du rayonnement terahertz. Premierement, l'anisotropie de l'absorption terahertz et de la pompe optique par les nanofils est demontree. Deuxiemement, le temps de recombinaison des photoporteurs est etudie en fonction du nombre de photoporteurs injectes. Une hypothese expliquant les comportements observes pour les nanofils non-dopes et dopes-n est presentee. Troisiemement, la photoconductivite est extraite pour les nanofils non-dopes et dopes-n sur une plage de 0.5 a 2 THz. Un lissage sur la photoconductivite permet d'estimer le nombre de dopants dans les nanofils dopes-n. Mots-cles: nanofil, silicium, terahertz, conductivite, spectroscopie, photoconductivite.

  2. All-dielectric rod antenna array for terahertz communications

    NASA Astrophysics Data System (ADS)

    Withayachumnankul, Withawat; Yamada, Ryoumei; Fujita, Masayuki; Nagatsuma, Tadao

    2018-05-01

    The terahertz band holds a potential for point-to-point short-range wireless communications at sub-terabit speed. To realize this potential, supporting antennas must have a wide bandwidth to sustain high data rate and must have high gain and low dissipation to compensate for the free space path loss that scales quadratically with frequency. Here we propose an all-dielectric rod antenna array with high radiation efficiency, high gain, and wide bandwidth. The proposed array is integral to a low-loss photonic crystal waveguide platform, and intrinsic silicon is the only constituent material for both the antenna and the feed to maintain the simplicity, compactness, and efficiency. Effective medium theory plays a key role in the antenna performance and integrability. An experimental validation with continuous-wave terahertz electronic systems confirms the minimum gain of 20 dBi across 315-390 GHz. A demonstration shows that a pair of such identical rod array antennas can handle bit-error-free transmission at the speed up to 10 Gbit/s. Further development of this antenna will build critical components for future terahertz communication systems.

  3. Broadband gate-tunable terahertz plasmons in graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Yao, Baicheng; Liu, Yuan; Huang, Shu-Wei; Choi, Chanyeol; Xie, Zhenda; Flor Flores, Jaime; Wu, Yu; Yu, Mingbin; Kwong, Dim-Lee; Huang, Yu; Rao, Yunjiang; Duan, Xiangfeng; Wong, Chee Wei

    2018-01-01

    Graphene, a unique two-dimensional material comprising carbon in a honeycomb lattice1, has brought breakthroughs across electronics, mechanics and thermal transport, driven by the quasiparticle Dirac fermions obeying a linear dispersion2,3. Here, we demonstrate a counter-pumped all-optical difference frequency process to coherently generate and control terahertz plasmons in atomic-layer graphene with octave-level tunability and high efficiency. We leverage the inherent surface asymmetry of graphene for strong second-order nonlinear polarizability4,5, which, together with tight plasmon field confinement, enables a robust difference frequency signal at terahertz frequencies. The counter-pumped resonant process on graphene uniquely achieves both energy and momentum conservation. Consequently, we demonstrate a dual-layer graphene heterostructure with terahertz charge- and gate-tunability over an octave, from 4.7 THz to 9.4 THz, bounded only by the pump amplifier optical bandwidth. Theoretical modelling supports our single-volt-level gate tuning and optical-bandwidth-bounded 4.7 THz phase-matching measurements through the random phase approximation, with phonon coupling, saturable absorption and below the Landau damping, to predict and understand graphene plasmon physics.

  4. Low-cost ultra-thin broadband terahertz beam-splitter.

    PubMed

    Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

    2012-02-27

    A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

  5. Sub-terahertz and terahertz microstrip resonant-tunneling-diode oscillators

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Feiginov, Michael, E-mail: feiginov.michael@canon.co.jp

    We present a theoretical analysis of traveling-wave microstrip resonant-tunneling-diode (RTD) oscillators. Such oscillators are similar to terahertz (THz) quantum-cascade lasers (QCLs) with a metal-metal waveguide and with just the active part of a single QCL period (an RTD) as their active core. Assuming realistic parameters of RTDs, we show that the microstrip RTD oscillators should be working at sub-THz and THz frequencies. Contrary to the contemporary THz QCLs, RTD microstrips are room-temperature oscillators. The major loss- and gain-enhancement mechanisms in RTD microstrips are identified.

  6. Electromagnetically induced transparency metamaterial based on spoof localized surface plasmons at terahertz frequencies

    PubMed Central

    Liao, Zhen; Liu, Shuo; Ma, Hui Feng; Li, Chun; Jin, Biaobing; Cui, Tie Jun

    2016-01-01

    We numerically and experimentally demonstrate a plasmonic metamaterial whose unit cell is composed of an ultrathin metallic disk and four ultrathin metallic spiral arms at terahertz frequencies, which supports both spoof electric and magnetic localized surface plasmon (LSP) resonances. We show that the resonant wavelength is much larger than the size of the unit particle, and further find that the resonant wavelength is very sensitive to the particle’s geometrical dimensions and arrangements. It is clearly illustrated that the magnetic LSP resonance exhibits strong dependence to the incidence angle of terahertz wave, which enables the design of metamaterials to achieve an electromagnetically induced transparency effect in the terahertz frequencies. This work opens up the possibility to apply for the surface plasmons in functional devices in the terahertz band. PMID:27277417

  7. Superparamagnetic Au-Fe3O4 nanoparticles: one-pot synthesis, biofunctionalization and toxicity evaluation

    NASA Astrophysics Data System (ADS)

    Pariti, A.; Desai, P.; Maddirala, S. K. Y.; Ercal, N.; Katti, K. V.; Liang, X.; Nath, M.

    2014-09-01

    Superparamagnetic Au-Fe3O4 bifunctional nanoparticles have been synthesized using a single step hot-injection precipitation method. The synthesis involved using Fe(CO)5 as iron precursor and HAuCl4 as gold precursor in the presence of oleylamine and oleic acid. Oleylamine helps in reducing Au3+ to Au0 seeds which simultaneously oxidizes Fe(0) to form Au-Fe3O4 bifunctional nanoparticles. Triton® X-100 was employed as a highly viscous solvent to prevent agglomeration of Fe3O4 nanoparticles. Detailed characterization of these nanoparticles was performed by using x-ray powder diffraction, transmission electron microscopy, scanning tunneling electron microscopy, UV-visible spectroscopy, Mössbauer and magnetometry studies. To evaluate these nanoparticles’ applicability in biomedical applications, L-cysteine was attached to the Au-Fe3O4 nanoparticles and cytotoxicity of Au-Fe3O4 nanoparticles was tested using CHO cells by employing MTS assay. L-cysteine modified Au-Fe3O4 nanoparticles were qualitatively characterized using Fourier transform infrared spectroscopy and Raman spectroscopy; and quantitatively using acid ninhydrin assay. Investigations reveal that that this approach yields Au-Fe3O4 bifunctional nanoparticles with an average particle size of 80 nm. Mössbauer studies indicated the presence of Fe in Fe3+ in A and B sites (tetrahedral and octahedral, respectively) and Fe2+ in B sites (octahedral). Magnetic measurements also indicated that these nanoparticles were superparamagnetic in nature due to Fe3O4 region. The saturation magnetization for the bifunctional nanoparticles was observed to be ˜74 emu g-1, which is significantly higher than the previously reported Fe3O4 nanoparticles. Mössbauer studies indicated that there was no significant Fe(0) impurity that could be responsible for the superparamagnetic nature of these nanoparticles. None of the investigations showed any presence of other impurities such as Fe2O3 and FeOOH. These Au-Fe3O4 bifunctional

  8. Implementation and Performance of GaAs Digital Signal Processing ASICs

    NASA Technical Reports Server (NTRS)

    Whitaker, William D.; Buchanan, Jeffrey R.; Burke, Gary R.; Chow, Terrance W.; Graham, J. Scott; Kowalski, James E.; Lam, Barbara; Siavoshi, Fardad; Thompson, Matthew S.; Johnson, Robert A.

    1993-01-01

    The feasibility of performing high speed digital signal processing in GaAs gate array technology has been demonstrated with the successful implementation of a VLSI communications chip set for NASA's Deep Space Network. This paper describes the techniques developed to solve some of the technology and implementation problems associated with large scale integration of GaAs gate arrays.

  9. Continuous-wave optical parametric oscillators on their way to the terahertz range

    NASA Astrophysics Data System (ADS)

    Sowade, Rosita; Breunig, Ingo; Kiessling, Jens; Buse, Karsten

    2010-02-01

    Continuous-wave optical parametric oscillators (OPOs) are known to be working horses for spectroscopy in the near- and mid-infrared. However, strong absorption in nonlinear media like lithium niobate complicates the generation of far-infrared light. This absorption leads to pump thresholds vastly exceeding the power of standard pump lasers. Our first approach was, therefore, to combine the established technique of photomixing with optical parametric oscillators. Here, two OPOs provide one wave each, with a tunable difference frequency. These waves are combined to a beat signal as a source for photomixers. Terahertz radiation between 0.065 and 1.018 THz is generated with powers in the order of nanowatts. To overcome the upper frequency limit of the opto-electronic photomixers, terahertz generation has to rely entirely on optical methods. Our all-optical approach, getting around the high thresholds for terahertz generation, is based on cascaded nonlinear processes: the resonantly enhanced signal field, generated in the primary parametric process, is intense enough to act as the pump for a secondary process, creating idler waves with frequencies in the terahertz regime. The latter ones are monochromatic and tunable with detected powers of more than 2 μW at 1.35 THz. Thus, continuous-wave optical parametric oscillators have entered the field of terahertz photonics.

  10. Paths to light trapping in thin film GaAs solar cells.

    PubMed

    Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

    2018-03-19

    It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

  11. Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

    DTIC Science & Technology

    1994-02-28

    from the bandgap discontinuity (as was proposed in my publications [1,2]). Also, by using superlattice structure A1GaAs / GaAs: Er / AlGaAs, we could...n ipact ightemiting evic 10 3. The AlGaAs/GaAs: Er/A1GaAs superlattice structure. For the first time we designed the unipolar n’ - superlattice - n...structure as shown in Figure 5. The GaAs: Er/Alo.45Gao.55As superlattice was grown by MBE on an n’ GaAs: Si substrate. It consisted of 60 periods of

  12. Contrast improvement of terahertz images of thin histopathologic sections.

    PubMed

    Formanek, Florian; Brun, Marc-Aurèle; Yasuda, Akio

    2010-12-03

    We present terahertz images of 10 μm thick histopathologic sections obtained in reflection geometry with a time-domain spectrometer, and demonstrate improved contrast for sections measured in paraffin with water. Automated segmentation is applied to the complex refractive index data to generate clustered terahertz images distinguishing cancer from healthy tissues. The degree of classification of pixels is then evaluated using registered visible microscope images. Principal component analysis and propagation simulations are employed to investigate the origin and the gain of image contrast.

  13. Crystal growth of GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Pawlowicz, L. M.; Dabkowski, F.; Li, C. J.

    1984-01-01

    It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

  14. Propagation of terahertz pulses in random media.

    PubMed

    Pearce, Jeremy; Jian, Zhongping; Mittleman, Daniel M

    2004-02-15

    We describe measurements of single-cycle terahertz pulse propagation in a random medium. The unique capabilities of terahertz time-domain spectroscopy permit the characterization of a multiply scattered field with unprecedented spatial and temporal resolution. With these results, we can develop a framework for understanding the statistics of broadband laser speckle. Also, the ability to extract information on the phase of the field opens up new possibilities for characterizing multiply scattered waves. We illustrate this with a simple example, which involves computing a time-windowed temporal correlation between fields measured at different spatial locations. This enables the identification of individual scattering events, and could lead to a new method for imaging in random media.

  15. Terahertz broadband polarization converter based on metamaterials

    NASA Astrophysics Data System (ADS)

    Li, Yonghua; Zhao, Guozhong

    2018-01-01

    Based on the metamaterial composed of symmetrical split resonant ring, a broadband reflective terahertz polarization converter is proposed. The numerical simulation shows that it can rotate the polarization direction of linear polarized wave 90° in the range of 0.7-1.8THz and the polarization conversion ratio is over 90%. The reflection coefficient of the two electric field components in the diagonal direction is the same and the phase difference is 180° ,which leads to the cross-polarization rotation.In order to further study the physical mechanism of high polarization conversion, we analyze the surface current distribution of the resonant ring. The polarization converter has potential applications in terahertz wave plate and metamaterial antenna design.

  16. Terahertz carpet cloak based on ultrathin metasurface

    NASA Astrophysics Data System (ADS)

    Wei, Minggui; Yang, Quanlong; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2018-01-01

    Ultrathin metasurfaces with local phase compensation deliver new schemes to cloaking devices. We demonstrate a remarkable large size carpet cloak realized by an ultrathin metasurface at terahertz frequencies. The metasurface cloak is constructed by periodically arranging 12 different elements. The reflected wave front is perfectly reconstructed by an ultrathin metasurface cloak, which perform well under both intensity-sensitive and phase-sensitive detectors. The invisibility is verified when the cloak is placed on a reflecting triangular surface (bump). The multi-step discrete phase design method would greatly simplify the design process and is probable to achieve large-dimension cloaks, for applications in radar and antenna systems as a thin and easy-to-fabricate solution for radio and terahertz frequencies.

  17. A model for proton-irradiated GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Wilson, J. W.; Walker, G. H.; Outlaw, R. A.; Stock, L. V.

    1982-01-01

    A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

  18. Superiority of terahertz over infrared transmission through bandages and burn wound ointments

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Suen, Jonathan Y., E-mail: j.suen@duke.edu; Padilla, Willie J.

    Terahertz electromagnetic waves have long been proposed to be ideal for spectroscopy and imaging through non-polar dielectric materials that contain no water. Terahertz radiation may thus be useful for monitoring burn and wound injury recovery, as common care treatments involve application of both a clinical dressing and topical ointment. Here, we investigate the optical properties of typical care treatments in the millimeter wave (150–300 GHz), terahertz (0.3–3 THz), and infrared (14.5–0.67 μm) ranges of the electromagnetic spectrum. We find that THz radiation realizes low absorption coefficients and high levels of transmission compared to infrared wavelengths, which were strongly attenuated. Terahertz imaging canmore » enable safe, non-ionizing, noninvasive monitoring of the healing process directly through clinical dressings and recovery ointments, minimizing the frequency of dressing changes and thus increasing the rate of the healing process.« less

  19. Graphene surface emitting terahertz laser: Diffusion pumping concept

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

    2013-12-16

    We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

  20. Detection and identification of illicit drugs using terahertz imaging

    NASA Astrophysics Data System (ADS)

    Lu, Meihong; Shen, Jingling; Li, Ning; Zhang, Yan; Zhang, Cunlin; Liang, Laishun; Xu, Xiaoyu

    2006-11-01

    We demonstrated an advanced terahertz imaging technique for detection and identification of illicit drugs by introducing the component spatial pattern analysis. As an explanation, the characteristic fingerprint spectra and refractive index of ketamine were first measured with terahertz time-domain spectroscopy both in the air and nitrogen. The results obtained in the ambient air indicated that some absorption peaks are not obvious or probably not dependable. It is necessary and important to present a more practical technique for the detection. The spatial distributions of several illicit drugs [3,4-methylenedioxymethamphetamine, methylenedioxyamphetamine, heroin, acetylcodeine, morphine, and ketamine], widely consumed in the world, were obtained from terahertz images using absorption spectra previously measured in the range from 0.2to2.6THz in the ambient air. The different kinds of pure illicit drugs hidden in mail envelopes were inspected and identified. It could be an effective method in the field of safety inspection.

  1. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  2. Untersuchung der Störwirkung von LTE auf SRD Anwendungen bei 868 MHz

    NASA Astrophysics Data System (ADS)

    Welpot, M.; Wunderlich, S.; Gaspard, I.

    2014-11-01

    Moderne Hausautomatisierungssysteme, Alarmanlagen oder auch Funk-Zugangssysteme in Haus und Automobil setzen auf frei nutzbare Frequenzen in ISM/SRD-Bändern. Die rasante Zunahme an privaten und kommerziell genutzten Applikationen im SRD-Band bei 868 MHz und der Ausbau der LTE-Mobilfunknetze im Frequenzbereich unterhalb von 1 GHz ("Digital Dividend") wirft zunehmend die Frage nach der Funkverträglichkeit dieser Systeme untereinander auf. Während die SRD-Funkmodule auf eine geringe Sendeleistung von ~ +14 dBm beschränkt sind (Ralf and Thomas, 2009), beträgt die maximale LTE-Sendeleistung im Uplink nach (ETSI-Norm, 2011) +23 dBm. Zusammen mit der Einführung von LTE im Frequenzbereich unterhalb 1 GHz als DSL-Ersatz vor allem in ländlichen Gebieten, ergibt sich damit als mögliches Störszenario, dass durch die Aussendung des LTE-Endgerätes im Bereich von ca. 850 MHz die SRD-Funkverbindungen bei 868 MHz insbesondere dann gestört werden, wenn die Antennen beider Funksysteme räumlich nahe zueinander angeordnet sind und folglich nur eine geringe zusätzliche Entkopplung der Systeme bieten. In der vorliegenden Arbeit wird das LTE-Störpotential auf SRD-Empfänger praxisnah untersucht.

  3. Terahertz wave techniques using a metal mesh for evaluating the components of the stratum corneum.

    PubMed

    Mizukoshi, Koji; Yonekura, Kazuki; Ogura, Hidehiro; Guan, Yu; Kawase, Kodo

    2013-02-01

    Terahertz waves are located in the region of the spectrum between milliwaves and infrared. We analyzed the feasibility of terahertz spectroscopy to inspect the compositional variations of the stratum corneum (SC). We used a terahertz time-domain spectroscopy system with the metal mesh technique. To investigate whether terahertz can inspect compositional variation of SC, we measured the terahertz frequency spectra of the SC sheet that was treated with chloroform-methanol, lipid mixture, a denaturation agent, and heating with hot air. The chloroform-methanol treatment of the SC shifted the dip position, which represents a convex downward shape of the spectra, to a higher frequency. This dip shift was reversed to an untreated position by the dose-dependent application of a lipid mixture. The heating treatment of the SC shifted the dip position to a higher frequency. The same dip shift was also induced by the application of a denaturation agent to the SC. The technique using terahertz waves with a metal mesh is effective because of its simplicity and its high degree of accuracy in detecting the amount of lipid and the protein conformation state. © 2012 John Wiley & Sons A/S.

  4. Dispersion of surface plasmon polaritons on metal wires in the terahertz frequency range.

    PubMed

    Wang, Kanglin; Mittleman, Daniel M

    2006-04-21

    We report the experimental and theoretical study of the dispersive behavior of surface plasmon polaritons (SPPs) on cylindrical metal surfaces in the terahertz frequency range. Time-domain measurements of terahertz SPPs propagating on metal wires reveal a unique structure that is inconsistent with a simple extrapolation of the high frequency portion of the dispersion diagram for SPPs on a planar metal surface, and also distinct from that of SPPs on metal nanowires observed at visible and near-infrared frequencies. The results are consistent with a numerical solution of Maxwell's equations, showing that the dispersive behavior of SPPs on a cylindrical metal surface at terahertz frequencies is quite different from that of SPPs on a flat surface. These findings indicate the increasing importance of skin effects for SPPs in the terahertz range, as well as the enhancement of such effects on curved surfaces.

  5. Distributed source model for the full-wave electromagnetic simulation of nonlinear terahertz generation.

    PubMed

    Fumeaux, Christophe; Lin, Hungyen; Serita, Kazunori; Withayachumnankul, Withawat; Kaufmann, Thomas; Tonouchi, Masayoshi; Abbott, Derek

    2012-07-30

    The process of terahertz generation through optical rectification in a nonlinear crystal is modeled using discretized equivalent current sources. The equivalent terahertz sources are distributed in the active volume and computed based on a separately modeled near-infrared pump beam. This approach can be used to define an appropriate excitation for full-wave electromagnetic numerical simulations of the generated terahertz radiation. This enables predictive modeling of the near-field interactions of the terahertz beam with micro-structured samples, e.g. in a near-field time-resolved microscopy system. The distributed source model is described in detail, and an implementation in a particular full-wave simulation tool is presented. The numerical results are then validated through a series of measurements on square apertures. The general principle can be applied to other nonlinear processes with possible implementation in any full-wave numerical electromagnetic solver.

  6. Nonlinear two-dimensional terahertz photon echo and rotational spectroscopy in the gas phase.

    PubMed

    Lu, Jian; Zhang, Yaqing; Hwang, Harold Y; Ofori-Okai, Benjamin K; Fleischer, Sharly; Nelson, Keith A

    2016-10-18

    Ultrafast 2D spectroscopy uses correlated multiple light-matter interactions for retrieving dynamic features that may otherwise be hidden under the linear spectrum; its extension to the terahertz regime of the electromagnetic spectrum, where a rich variety of material degrees of freedom reside, remains an experimental challenge. We report a demonstration of ultrafast 2D terahertz spectroscopy of gas-phase molecular rotors at room temperature. Using time-delayed terahertz pulse pairs, we observe photon echoes and other nonlinear signals resulting from molecular dipole orientation induced by multiple terahertz field-dipole interactions. The nonlinear time domain orientation signals are mapped into the frequency domain in 2D rotational spectra that reveal J-state-resolved nonlinear rotational dynamics. The approach enables direct observation of correlated rotational transitions and may reveal rotational coupling and relaxation pathways in the ground electronic and vibrational state.

  7. Ultralow temperature terahertz magnetic thermodynamics of perovskite-like SmFeO3 ceramic

    PubMed Central

    Fu, Xiaojian; Zeng, Xinxi; Wang, Dongyang; Chi Zhang, Hao; Han, Jiaguang; Jun Cui, Tie

    2015-01-01

    The terahertz magnetic properties of perovskite-like SmFeO3 ceramic are investigated over a broad temperature range, especially at ultralow temperatures, using terahertz time-domain spectroscopy. It is shown that both resonant frequencies of quasi-ferromagnetic and quasi-antiferromagnetic modes have blue shifts with the decreasing temperature due to the enhancement of effective magnetic field. The temperature-dependent magnetic anisotropy constants are further estimated using the resonant frequencies, under the approximation of omitting the contribution of Sm3+ magnetic moments to the effective field. Specially, the effective anisotropy constants in the ca and cb planes at 3 K are 6.63 × 105 erg/g and 8.48 × 105 erg/g, respectively. This thoroughly reveals the terahertz magnetic thermodynamics of orthoferrites and will be beneficial to the application in terahertz magnetism. PMID:26424488

  8. Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites

    PubMed Central

    Chanana, Ashish; Liu, Xiaojie; Vardeny, Zeev Valy

    2018-01-01

    The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices. PMID:29736416

  9. A microfabricated low-profile wideband antenna array for terahertz communications.

    PubMed

    Luk, K M; Zhou, S F; Li, Y J; Wu, F; Ng, K B; Chan, C H; Pang, S W

    2017-04-28

    While terahertz communications are considered to be the future solutions for the increasing demands on bandwidth, terahertz equivalents of radio frequency front-end components have not been realized. It remains challenging to achieve wideband, low profile antenna arrays with highly directive beams of radiation. Here, based on the complementary antenna approach, a wideband 2 × 2 cavity-backed slot antenna array with a corrugated surface is proposed. The approach is based on a unidirectional antenna with a cardiac radiation pattern and stable frequency characteristics that is achieved by integrating a series-resonant electric dipole with a parallel-resonant magnetic dipole. In this design, the slots work as magnetic dipoles while the corrugated surface radiates as an array of electric dipoles. The proposed antenna is realized at 1 THz operating frequency by stacking multiple metallized layers using the microfabrication technology. S-parameter measurements of this terahertz low-profile metallic antenna array demonstrate high efficiency at terahertz frequencies. Fractional bandwidth and gain are measured to be 26% and 14 dBi which are consistent with the simulated results. The proposed antenna can be used as the building block for larger antenna arrays with more directive beams, paving the way to develop high gain low-profile antennas for future communication needs.

  10. Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

    NASA Astrophysics Data System (ADS)

    Yen, Ming Y.; Haas, T. W.

    1990-10-01

    We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

  11. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    NASA Astrophysics Data System (ADS)

    Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

    2016-08-01

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  12. Contrast improvement of terahertz images of thin histopathologic sections

    PubMed Central

    Formanek, Florian; Brun, Marc-Aurèle; Yasuda, Akio

    2011-01-01

    We present terahertz images of 10 μm thick histopathologic sections obtained in reflection geometry with a time-domain spectrometer, and demonstrate improved contrast for sections measured in paraffin with water. Automated segmentation is applied to the complex refractive index data to generate clustered terahertz images distinguishing cancer from healthy tissues. The degree of classification of pixels is then evaluated using registered visible microscope images. Principal component analysis and propagation simulations are employed to investigate the origin and the gain of image contrast. PMID:21326635

  13. Broadband non-polarizing terahertz beam splitters with variable split ratio

    NASA Astrophysics Data System (ADS)

    Wei, Minggui; Xu, Quan; Wang, Qiu; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

    2017-08-01

    Seeking effective terahertz functional devices has always aroused extensive attention. Of particular interest is the terahertz beam splitter. Here, we have proposed, designed, manufactured, and tested a broadband non-polarizing terahertz beam splitter with a variable split ratio based on an all-dielectric metasurface. The metasurface was created by patterning a dielectric surface of the N-step phase gradient and etching to a few hundred micrometers. The conversion efficiency as high as 81% under the normal incidence at 0.7 THz was achieved. Meanwhile, such a splitter works well over a broad frequency range. The split ratio of the proposed design can be continuously tuned by simply shifting the metasurface, and the angle of emergences can also be easily adjusted by choosing the step of phase gradients. The proposed design is non-polarizing, and its performance is kept under different polarizations.

  14. Terahertz thickness determination with interferometric vibration correction for industrial applications.

    PubMed

    Pfeiffer, Tobias; Weber, Stefan; Klier, Jens; Bachtler, Sebastian; Molter, Daniel; Jonuscheit, Joachim; Von Freymann, Georg

    2018-05-14

    In many industrial fields, like automotive and painting industry, the thickness of thin layers is a crucial parameter for quality control. Hence, the demand for thickness measurement techniques continuously grows. In particular, non-destructive and contact-free terahertz techniques access a wide range of thickness determination applications. However, terahertz time-domain spectroscopy based systems perform the measurement in a sampling manner, requiring fixed distances between measurement head and sample. In harsh industrial environments vibrations of sample and measurement head distort the time-base and decrease measurement accuracy. We present an interferometer-based vibration correction for terahertz time-domain measurements, able to reduce thickness distortion by one order of magnitude for vibrations with frequencies up to 100 Hz and amplitudes up to 100 µm. We further verify the experimental results by numerical calculations and find very good agreement.

  15. Negative refractive index metamaterial with high transmission, low reflection, and low loss in the terahertz waveband.

    PubMed

    Suzuki, Takehito; Sekiya, Masashi; Sato, Tatsuya; Takebayashi, Yuki

    2018-04-02

    The refractive index is a basic parameter of materials which it is essential to know for the manipulation of electromagnetic waves. However, there are no naturally occurring materials with negative refractive indices, and high-performance materials with negative refractive indices and low losses are demanded in the terahertz waveband. In this paper, measurements by terahertz time-domain spectroscopy (THz-TDS) demonstrate a metamaterial with a negative refractive index n of -4.2 + j0.17, high transmitted power of 81.5%, low reflected power of 4.3%, and a high figure of merit (FOM = |Re(n)/Im(n)|) of 24.2 at 0.42 THz. The terahertz metamaterial with these unprecedented properties can provide various attractive terahertz applications such as superlenses with resolutions beyond the diffraction limit in terahertz continuous wave imaging.

  16. Terahertz transmission properties of an individual slit in a thin metallic plate.

    PubMed

    Lee, J W; Park, T H; Nordlander, Peter; Mittleman, Daniel M

    2009-07-20

    We report on the terahertz transmission properties through a single slit in a thin metallic film. The properties are studied by comparing the transmissions of TE- and TM-polarized electromagnetic waves over a broad spectral range from the geometrical regime to the subwavelength limit. In the geometrical regime, the remarkable terahertz transmission due to guided modes is observed even without the contribution of surface waves. Whereas in the subwavelength limit, the surface charge oscillations associated with the TM-polarized guided mode give rise to strong transmission enhancement. The nature of the mechanisms for the terahertz transmission is elucidated using theoretical simulations of the near-field distributions and electromagnetic energy flow.

  17. Vibrational spectra of ketamine hydrochloride and 3, 4-methylenedioxymethamphetamine in terahertz range

    NASA Astrophysics Data System (ADS)

    Wang, Guangqin; Shen, Jingling; Jia, Yan

    2007-07-01

    The terahertz spectrum of ketamine hydrochloride at room temperature, in the range of 0.2-2.6THz, has been measured by terahertz time-domain spectroscopy (TDS). Full-geometry optimizations and frequency calculations using the density functional theory (DFT) are also applied to predict the absorption spectra of ketamine hydrochloride and 3, 4-methylenedioxymethamphetamine (MDMA). The results of the simulation show qualitative agreement with the experimental data especially for MDMA, and the observed spectra features are assigned based on the DFT calculation. The results suggest that use of the terahertz TDS technique can be an effective method for the detection and inspection of illicit drugs.

  18. Electro-optic crystal mosaics for the generation of terahertz radiation

    DOEpatents

    Carrig, Timothy J.; Taylor, Antoinette J.; Stewart, Kevin R.

    1996-01-01

    Apparatus for the generation of high energy terahertz radiation is presented and comprises laser means effective to produce subpicosecond optical pulses and a mosaic comprising a plurality of planar electro-optic crystals fastened together edge to edge in the form of a grid. The electro-optic crystals are in optical communication with the subpicosecond optical pulses, and behave as a single large electro-optic crystal, producing high energy terahertz radiation by way of optical rectification.

  19. DFT algorithms for bit-serial GaAs array processor architectures

    NASA Technical Reports Server (NTRS)

    Mcmillan, Gary B.

    1988-01-01

    Systems and Processes Engineering Corporation (SPEC) has developed an innovative array processor architecture for computing Fourier transforms and other commonly used signal processing algorithms. This architecture is designed to extract the highest possible array performance from state-of-the-art GaAs technology. SPEC's architectural design includes a high performance RISC processor implemented in GaAs, along with a Floating Point Coprocessor and a unique Array Communications Coprocessor, also implemented in GaAs technology. Together, these data processors represent the latest in technology, both from an architectural and implementation viewpoint. SPEC has examined numerous algorithms and parallel processing architectures to determine the optimum array processor architecture. SPEC has developed an array processor architecture with integral communications ability to provide maximum node connectivity. The Array Communications Coprocessor embeds communications operations directly in the core of the processor architecture. A Floating Point Coprocessor architecture has been defined that utilizes Bit-Serial arithmetic units, operating at very high frequency, to perform floating point operations. These Bit-Serial devices reduce the device integration level and complexity to a level compatible with state-of-the-art GaAs device technology.

  20. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation.

  1. High-efficiency, radiation-resistant GaAs space cells

    NASA Technical Reports Server (NTRS)

    Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

    1991-01-01

    Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

  2. Markets, Availability, Notice, and Technical Performance of Terahertz Systems: Historic Development, Present, and Trends

    NASA Astrophysics Data System (ADS)

    Hochrein, Thomas

    2015-03-01

    Although a lot of work has already been done under the older terms "far infrared" or "sub-millimeter waves", the term "terahertz" stands for a novel technique offering many potential applications. The latter term also represents a new generation of systems with the opportunity for coherent, time-resolved detection. In addition to the well-known technical opportunities, an historical examination of Internet usage, as well as the number of publications and patent applications, confirms ongoing interest in this technique. These activities' annual growth rate is between 9 % and 21 %. The geographical distribution shows the center of terahertz activities. A shift from the scientific to more application-oriented research can be observed. We present a survey among worldwide terahertz suppliers with special focus on the European region and the use of terahertz systems in the field of measurement and analytical applications. This reveals the current state of terahertz systems' commercial and geographical availability as well as their costs, target markets, and technical performance. Component cost distribution using the example of an optical pulsed time-domain terahertz system gives an impression of the prevailing cost structure. The predication regarding prospective market development, decreasing system costs and higher availability shows a convenient situation for potential users and interested customers. The causes are primarily increased competition and larger quantities in the future.

  3. Terahertz Spectroscopy of Individual Single-Walled Carbon Nanotubes as a Probe of Luttinger Liquid Physics.

    PubMed

    Chudow, Joel D; Santavicca, Daniel F; Prober, Daniel E

    2016-08-10

    Luttinger liquid theory predicts that collective electron excitations due to strong electron-electron interactions in a one-dimensional (1D) system will result in a modification of the collective charge-propagation velocity. By utilizing a circuit model for an individual metallic single-walled carbon nanotube as a nanotransmission line, it has been shown that the frequency-dependent terahertz impedance of a carbon nanotube can probe this expected 1D Luttinger liquid behavior. We excite terahertz standing-wave resonances on individual antenna-coupled metallic single-walled carbon nanotubes. The terahertz signal is rectified using the nanotube contact nonlinearity, allowing for a low-frequency readout of the coupled terahertz current. The charge velocity on the nanotube is determined from the terahertz spectral response. Our measurements show that a carbon nanotube can behave as a Luttinger liquid system with charge-propagation velocities that are faster than the Fermi velocity. Understanding what determines the charge velocity in low-dimensional conductors is important for the development of next generation nanodevices.

  4. Influence of GaAs substrate properties on the congruent evaporation temperature

    NASA Astrophysics Data System (ADS)

    Spirina, A. A.; Nastovjak, A. G.; Shwartz, N. L.

    2018-03-01

    High-temperature annealing of GaAs(111)A and GaAs(111)B substrates under Langmuir evaporation conditions was studied using Monte Carlo simulation. The maximal value of the congruent evaporation temperature was estimated. The congruent evaporation temperature was demonstrated to be dependent on the surface orientation and concentration of surface defects.

  5. Conditions for optimal efficiency of PCBM-based terahertz modulators

    NASA Astrophysics Data System (ADS)

    Yoo, Hyung Keun; Lee, Hanju; Lee, Kiejin; Kang, Chul; Kee, Chul-Sik; Hwang, In-Wook; Lee, Joong Wook

    2017-10-01

    We demonstrate the conditions for optimal modulation efficiency of active terahertz modulators based on phenyl-C61-butyric acid methyl ester (PCBM)-silicon hybrid structures. Highly efficient active control of the terahertz wave modulation was realized by controlling organic film thickness, annealing temperature, and laser excitation wavelength. Under the optimal conditions, the modulation efficiency reached nearly 100%. Charge distributions measured with a near-field scanning microwave microscanning technique corroborated the fact that the increase of photo-excited carriers due to the PCBM-silicon hybrid structure enables the enhancement of active modulation efficiency.

  6. Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

    NASA Astrophysics Data System (ADS)

    Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

    2017-07-01

    We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

  7. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

    PubMed Central

    Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

    2007-01-01

    The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

  8. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    PubMed

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  9. GaAs quantum dots in a GaP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

    2018-03-01

    We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

  10. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  11. Recent advances in terahertz technology for biomedical applications.

    PubMed

    Sun, Qiushuo; He, Yuezhi; Liu, Kai; Fan, Shuting; Parrott, Edward P J; Pickwell-MacPherson, Emma

    2017-06-01

    Terahertz instrumentation has improved significantly in recent years such that THz imaging systems have become more affordable and easier to use. THz systems can now be operated by non-THz experts greatly facilitating research into many potential applications. Due to the non-ionising nature of THz light and its high sensitivity to soft tissues, there is an increasing interest in biomedical applications including both in vivo and ex vivo studies. Additionally, research continues into understanding the origin of contrast and how to interpret terahertz biomedical images. This short review highlights some of the recent work in these areas and suggests some future research directions.

  12. Investigation of high efficiency GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Linden, Kurt

    1989-01-01

    Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

  13. One-dimensional terahertz imaging of surfactant-stabilized dodecane-brine emulsion

    NASA Astrophysics Data System (ADS)

    Nickel, Daniel Vincent

    Terahertz line-images of surfactant-stabilized dodecane(C12H 26)-brine emulsions are obtained by translating the emulsified region through the focus of a terahertz time-domain spectrometer, capturing a time-domain waveform at each vertical position. From these images, relative dodecane content, emulsion size, and stability can be extracted to evaluate the efficacy of the surfactant in solvating the dodecane. In addition, the images provide insight into the dynamics of concentrated emulsions after mixing.

  14. Electro-optic crystal mosaics for the generation of terahertz radiation

    DOEpatents

    Carrig, T.J.; Taylor, A.J.; Stewart, K.R.

    1996-08-06

    Apparatus for the generation of high energy terahertz radiation is presented and comprises laser means effective to produce subpicosecond optical pulses and a mosaic comprising a plurality of planar electro-optic crystals fastened together edge to edge in the form of a grid. The electro-optic crystals are in optical communication with the subpicosecond optical pulses, and behave as a single large electro-optic crystal, producing high energy terahertz radiation by way of optical rectification. 5 figs.

  15. Electron acceleration and kinetic energy tailoring via ultrafast terahertz fields.

    PubMed

    Greig, S R; Elezzabi, A Y

    2014-11-17

    We propose a mechanism for tuning the kinetic energy of surface plasmon generated electron pulses through control of the time delay between a pair of externally applied terahertz pulses. Varying the time delay results in translation, compression, and broadening of the kinetic energy spectrum of the generated electron pulse. We also observe that the electrons' kinetic energy dependence on the carrier envelope phase of the surface plasmon is preserved under the influence of a terahertz electric field.

  16. Terahertz detection of alcohol using a photonic crystal fiber sensor.

    PubMed

    Sultana, Jakeya; Islam, Md Saiful; Ahmed, Kawsar; Dinovitser, Alex; Ng, Brian W-H; Abbott, Derek

    2018-04-01

    Ethanol is widely used in chemical industrial processes as well as in the food and beverage industry. Therefore, methods of detecting alcohol must be accurate, precise, and reliable. In this content, a novel Zeonex-based photonic crystal fiber (PCF) has been modeled and analyzed for ethanol detection in terahertz frequency range. A finite-element-method-based simulation of the PCF sensor shows a high relative sensitivity of 68.87% with negligible confinement loss of 7.79×10 -12    cm -1 at 1 THz frequency and x -polarization mode. Moreover, the core power fraction, birefringence, effective material loss, dispersion, and numerical aperture are also determined in the terahertz frequency range. Owing to the simple fiber structure, existing fabrication methods are feasible. With the outstanding waveguiding properties, the proposed sensor can potentially be used in ethanol detection, as well as polarization-preserving applications of terahertz waves.

  17. Electrically Tunable Reflective Terahertz Phase Shifter Based on Liquid Crystal

    NASA Astrophysics Data System (ADS)

    Yang, Jun; Xia, Tianyu; Jing, Shuaicheng; Deng, Guangsheng; Lu, Hongbo; Fang, Yong; Yin, Zhiping

    2018-02-01

    We present a reflective spatial phase shifter which operates at terahertz regime above 325 GHz. The controllable permittivity of the nematic liquid crystals was utilized to realize a tunable terahertz (THz) reflective phase shifter. The reflective characteristics of the terahertz electromagnetic waves and the liquid crystal parameters were calculated and analyzed. We provide the simulation results for the effect of the incident angle of the plane wave on the reflection. The experiment was carried out considering an array consisting of 30 × 30 patch elements, printed on a 20 × 20 mm quartz substrate with 1-mm thickness. The phase shifter provides a tunable phase range of 300° over the frequency range of 325 to 337.6 GHz. The maximum phase shift of 331° is achieved at 330 GHz. The proposed phase shifter is a potential candidate for THz applications, particularly for reconfigurable reflectarrays.

  18. Precise real-time polarization measurement of terahertz electromagnetic waves by a spinning electro-optic sensor.

    PubMed

    Yasumatsu, Naoya; Watanabe, Shinichi

    2012-02-01

    We propose and develop a method to quickly and precisely determine the polarization direction of coherent terahertz electromagnetic waves generated by femtosecond laser pulses. The measurement system consists of a conventional terahertz time-domain spectroscopy system with the electro-optic (EO) sampling method, but we add a new functionality in the EO crystal which is continuously rotating with the angular frequency ω. We find a simple yet useful formulation of the EO signal as a function of the crystal orientation, which enables a lock-in-like detection of both the electric-field amplitude and the absolute polarization direction of the terahertz waves with respect to the probe laser pulse polarization direction at the same time. The single measurement finishes around two periods of the crystal rotations (∼21 ms), and we experimentally prove that the accuracy of the polarization measurement does not suffer from the long-term amplitude fluctuation of the terahertz pulses. Distribution of the measured polarization directions by repeating the measurements is excellently fitted by a gaussian distribution function with a standard deviation of σ = 0.56°. The developed technique is useful for the fast direct determination of the polarization state of the terahertz electromagnetic waves for polarization imaging applications as well as the precise terahertz Faraday or Kerr rotation spectroscopy.

  19. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  20. Response of GaAs charge storage devices to transient ionizing radiation

    NASA Astrophysics Data System (ADS)

    Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

    Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

  1. Enhancement of conductance of GaAs sub-microwires under external stimuli

    NASA Astrophysics Data System (ADS)

    Qu, Xianlin; Deng, Qingsong; Zheng, Kun

    2018-03-01

    Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

  2. Terahertz vibrational signature of bacterial spores arising from nanostructure decorated endospore surface.

    PubMed

    Datta, Debopam; Stroscio, Michael A; Dutta, Mitra; Zhang, Weidong; Brown, Elliott R

    2018-05-03

    This theoretical effort is the first to explore the possible hypothesis that terahertz optical activity of Bacillus spores arises from normal vibrational modes of spore coat subcomponents in the terahertz frequency range. Bacterial strains like Bacillus and Clostridium form spores with a hardened coating made of peptidoglycan to protect its genetic material in harsh conditions. In recent years, electron microscopy and atomic force microscopy has revealed that bacterial spore surfaces are decorated with nanocylinders and honeycomb nanostructures. In this article, a simple elastic continuum model is used to describe the vibration of these nanocylinders mainly in Bacillus subtilis, which also leads to the conclusion that the terahertz signature of these spores arises from the vibration of these nanostructures. Three vibrating modes: radial/longitudinal, torsional and flexural, have been identified and discussed for the nanocylinders. The effect of bound water, which shifts the vibration frequency, is also discussed. The peptidoglycan molecule consists of polar and charged amino acids; hence, the sporal surface local vibrations interact strongly with the terahertz radiation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1985-01-01

    The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

  4. Blueish green photoluminescence from nitrided GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Shimaoka, Goro; Udagawa, Takashi

    1999-04-01

    Optical and structural studies were made on the Si-doped (100)GaAs surfaces nitrided at a temperature between 650° and 750°C for 15 min in the flowing NH 3 gas. The wavelength of photoluminescence (PL) spectra were observed to be shortened from 820 nm of the GaAs nitrided at 650°C with increasing nitridation temperature. Blueish green PL with wavelengths of approx. 490 nm and 470 nm were emitted from the nitrided surfaces at 700° and 750°C, respectively. Results of AES and SIMS indicated that the surfaces are nitrided as GaAs 1- xN x, (0< x≤1) alloy layer, and the nitrided region also tended to increase as the temperature raised. High-resolution transmission electron microscopic (HRTEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) results showed that films peeled off from the nitrided surfaces consisted mainly of hexagonal, wurtzite-type gallium nitride (GaN) with stacking faults and microtwins.

  5. GaAs High Breakdown Voltage Front and Back Side Processed Schottky Detectors for X-Ray Detection

    DTIC Science & Technology

    2007-11-01

    front and back side processed, unintentionally doped bulk gallium -arsenic (GaAs) Schottky detectors and determined that GaAs detectors with a large...a few materials that fulfill these requirements are gallium -arsenic (GaAs) and cadmium-zinc-tellurium (CdZnTe or CZT). They are viable alternative...Whitehill, C.; Pospíšil, S.; Wilhem, I.; Doležal, Z.; Juergensen, H.; Heuken, M. Development of low-pressure vapour -phase epitaxial GaAs for medical imaging

  6. Terahertz wave polarization beam splitter using a cascaded multimode interference structure.

    PubMed

    Li, Jiu-sheng; Liu, Han; Zhang, Le

    2014-08-01

    A terahertz wave polarization beam splitter, based on two cascaded multimode interference structures with different widths, is designed and numerically demonstrated. The numerical calculation results show that the designed polarization beam splitter can split transverse-electric (TE) and transverse-magnetic (TM)-polarized terahertz waves into different propagation directions with high efficiency over a frequency range from 6.40 to 6.50 THz. This polarization beam splitter shows more than a 22.06 dB extinction ratio for TE-polarization and a 31.65 dB extinction ratio for TM-polarization. Using such a polarization beam splitter, the whole length of the polarization beam splitter is reduced to about 1/12 that of a conventional design. This enables the polarization beam splitter to be used in terahertz wave integrated circuit fields.

  7. Study of image reconstruction for terahertz indirect holography with quasi-optics receiver.

    PubMed

    Gao, Xiang; Li, Chao; Fang, Guangyou

    2013-06-01

    In this paper, an indirect holographic image reconstruction algorithm was studied for terahertz imaging with a quasi-optics receiver. Based on the combination of the reciprocity principle and modified quasi-optics theory, analytical expressions of the received spatial power distribution and its spectrum are obtained for the interference pattern of target wave and reference wave. These results clearly give the quantitative relationship between imaging quality and the parameters of a Gaussian beam, which provides a good criterion for terahertz quasi-optics transceivers design in terahertz off-axis holographic imagers. To validate the effectiveness of the proposed analysis method, some imaging results with a 0.3 THz prototype system are shown based on electromagnetic simulation.

  8. [The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

    PubMed

    Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

    2016-02-01

    Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

  9. Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

    2006-06-01

    Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

  10. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  11. Numerical investigation of a scalable setup for efficient terahertz generation using a segmented tilted-pulse-front excitation.

    PubMed

    Pálfalvi, László; Tóth, György; Tokodi, Levente; Márton, Zsuzsanna; Fülöp, József András; Almási, Gábor; Hebling, János

    2017-11-27

    A hybrid-type terahertz pulse source is proposed for high energy terahertz pulse generation. It is the combination of the conventional tilted-pulse-front setup and a transmission stair-step echelon-faced nonlinear crystal with a period falling in the hundred-micrometer range. The most important advantage of the setup is the possibility of using plane parallel nonlinear optical crystal for producing good-quality, symmetric terahertz beam. Another advantage of the proposed setup is the significant reduction of imaging errors, which is important in the case of wide pump beams that are used in high energy experiments. A one dimensional model was developed for determining the terahertz generation efficiency, and it was used for quantitative comparison between the proposed new hybrid setup and previously introduced terahertz sources. With lithium niobate nonlinear material, calculations predict an approximately ten-fold increase in the efficiency of the presently described hybrid terahertz pulse source with respect to that of the earlier proposed setup, which utilizes a reflective stair-step echelon and a prism shaped nonlinear optical crystal. By using pump pulses of 50 mJ pulse energy, 500 fs pulse length and 8 mm beam spot radius, approximately 1% conversion efficiency and 0.5 mJ terahertz pulse energy can be reached with the newly proposed setup.

  12. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  13. Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

    NASA Astrophysics Data System (ADS)

    Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

    2006-05-01

    Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

  14. Terahertz imaging system based on a backward-wave oscillator.

    PubMed

    Dobroiu, Adrian; Yamashita, Masatsugu; Ohshima, Yuichi N; Morita, Yasuyuki; Otani, Chiko; Kawase, Kodo

    2004-10-20

    We present an imaging system designed for use in the terahertz range. As the radiation source a backward-wave oscillator was chosen for its special features such as high output power, good wave-front quality, good stability, and wavelength tunability from 520 to 710 GHz. Detection is achieved with a pyroelectric sensor operated at room temperature. The alignment procedure for the optical elements is described, and several methods to reduce the etalon effect that are inherent in monochromatic sources are discussed. The terahertz spot size in the sample plane is 550 microm (nearly the diffraction limit), and the signal-to-noise ratio is 10,000:1; other characteristics were also measured and are presented in detail. A number of preliminary applications are also shown that cover various areas: nondestructive real-time testing for plastic tubes and packaging seals; biological terahertz imaging of fresh, frozen, or freeze-dried samples; paraffin-embedded specimens of cancer tissue; and measurement of the absorption coefficient of water by use of a wedge-shaped cell.

  15. The dynamic process and microscopic mechanism of extraordinary terahertz transmission through perforated superconducting films

    PubMed Central

    Wu, J. B.; Zhang, X.; Jin, B. B.; Liu, H. T.; Chen, Y. H.; Li, Z. Y.; Zhang, C. H.; Kang, L.; Xu, W. W.; Chen, J.; Wang, H. B.; Tonouchi, M.; Wu, P. H.

    2015-01-01

    Superconductor is a compelling plasmonic medium at terahertz frequencies owing to its intrinsic low Ohmic loss and good tuning property. However, the microscopic physics of the interaction between terahertz wave and superconducting plasmonic structures is still unknown. In this paper, we conducted experiments of the enhanced terahertz transmission through a series of superconducting NbN subwavelength hole arrays, and employed microscopic hybrid wave model in theoretical analysis of the role of hybrid waves in the enhanced transmission. The theoretical calculation provided a good match of experimental data. In particular, we obtained the following results. When the width of the holes is far below wavelength, the enhanced transmission is mainly caused by localized resonance around individual holes. On the contrary, when the holes are large, hybrid waves scattered by the array of holes dominate the extraordinary transmission. The surface plasmon polaritions are proved to be launched on the surface of superconducting film and the excitation efficiency increases when the temperature approaches critical temperature and the working frequency goes near energy gap frequency. This work will enrich our knowledge on the microscopic physics of extraordinary optical transmission at terahertz frequencies and contribute to developing terahertz plasmonic devices. PMID:26498994

  16. Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays.

    PubMed

    Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P

    2017-11-15

    Charge-coupled devices (CCDs) are a well-established imaging technology in the visible and x-ray frequency ranges. However, the small quantum photon energies of terahertz radiation have hindered the use of this mature semiconductor technological platform in this frequency range, leaving terahertz imaging totally dependent on low-resolution bolometer technologies. Recently, it has been shown that silicon CCDs can detect terahertz photons at a high field, but the detection sensitivity is limited. Here we show that silicon, complementary metal-oxide-semiconductor (CMOS) technology offers enhanced detection sensitivity of almost two orders of magnitude, compared to CCDs. Our findings allow us to extend the low-frequency terahertz cutoff to less than 2 THz, nearly closing the technological gap with electronic imagers operating up to 1 THz. Furthermore, with the silicon CCD/CMOS technology being sensitive to mid-infrared (mid-IR) and the x-ray ranges, we introduce silicon as a single detector platform from 1 EHz to 2 THz. This overcomes the present challenge in spatially overlapping a terahertz/mid-IR pump and x-ray probe radiation at facilities such as free electron lasers, synchrotron, and laser-based x-ray sources.

  17. Terahertz electromagnetic fields (0.106 THz) do not induce manifest genomic damage in vitro.

    PubMed

    Hintzsche, Henning; Jastrow, Christian; Kleine-Ostmann, Thomas; Kärst, Uwe; Schrader, Thorsten; Stopper, Helga

    2012-01-01

    Terahertz electromagnetic fields are non-ionizing electromagnetic fields in the frequency range from 0.1 to 10 THz. Potential applications of these electromagnetic fields include the whole body scanners, which currently apply millimeter waves just below the terahertz range, but future scanners will use higher frequencies in the terahertz range. These and other applications will bring along human exposure to these fields. Up to now, only a limited number of investigations on biological effects of terahertz electromagnetic fields have been performed. Therefore, research is strongly needed to enable reliable risk assessment.Cells were exposed for 2 h, 8 h, and 24 h with different power intensities ranging from 0.04 mW/cm(2) to 2 mW/cm(2), representing levels below, at, and above current safety limits. Genomic damage on the chromosomal level was measured as micronucleus formation. DNA strand breaks and alkali-labile sites were quantified with the comet assay. No DNA strand breaks or alkali-labile sites were observed as a consequence of exposure to terahertz electromagnetic fields in the comet assay. The fields did not cause chromosomal damage in the form of micronucleus induction.

  18. Terahertz Electromagnetic Fields (0.106 THz) Do Not Induce Manifest Genomic Damage In Vitro

    PubMed Central

    Hintzsche, Henning; Jastrow, Christian; Kleine-Ostmann, Thomas; Kärst, Uwe; Schrader, Thorsten; Stopper, Helga

    2012-01-01

    Terahertz electromagnetic fields are non-ionizing electromagnetic fields in the frequency range from 0.1 to 10 THz. Potential applications of these electromagnetic fields include the whole body scanners, which currently apply millimeter waves just below the terahertz range, but future scanners will use higher frequencies in the terahertz range. These and other applications will bring along human exposure to these fields. Up to now, only a limited number of investigations on biological effects of terahertz electromagnetic fields have been performed. Therefore, research is strongly needed to enable reliable risk assessment. Cells were exposed for 2 h, 8 h, and 24 h with different power intensities ranging from 0.04 mW/cm2 to 2 mW/cm2, representing levels below, at, and above current safety limits. Genomic damage on the chromosomal level was measured as micronucleus formation. DNA strand breaks and alkali-labile sites were quantified with the comet assay. No DNA strand breaks or alkali-labile sites were observed as a consequence of exposure to terahertz electromagnetic fields in the comet assay. The fields did not cause chromosomal damage in the form of micronucleus induction. PMID:23029508

  19. Coherent and tunable terahertz radiation from graphene surface plasmon polaritons excited by an electron beam

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Shenggang, E-mail: liusg@uestc.edu.cn; Hu, Min; Chen, Xiaoxing

    2014-05-19

    Although surface plasmon polaritons (SPPs) resonance in graphene can be tuned in the terahertz regime, transforming such SPPs into coherent terahertz radiation has not been achieved. Here, we propose a graphene-based coherent terahertz radiation source with greatly enhanced intensity. The radiation works at room temperature, it is tunable and can cover the whole terahertz regime. The radiation intensity generated with this method is 400 times stronger than that from SPPs at a conventional dielectric or semiconducting surface and is comparable to that from the most advanced photonics source such as a quantum cascade laser. The physical mechanism for this strongmore » radiation is presented. The phase diagrams defining the parameters range for the occurrence of radiation is also shown.« less

  20. Generation of high-power terahertz radiation by nonlinear photon-assisted tunneling transport in plasmonic metamaterials

    NASA Astrophysics Data System (ADS)

    Chen, Pai-Yen; Salas, Rodolfo; Farhat, Mohamed

    2017-12-01

    We propose an optoelectronic terahertz oscillator based on the quantum tunneling effect in a plasmonic metamaterial, utilizing a nanostructured metal-insulator-metal (MIM) tunneling junction. The collective resonant response of meta-atoms can achieve >90% optical absorption and strongly localized optical fields within the MIM plasmonic nanojunction. By properly tailoring the radiation aperture, the nonlinear quantum conductance induced by the metamaterial-enhanced, photon-assisted tunneling may produce miliwatt-level terahertz radiation through the optical beating (or heterodyne down conversion) of two lasers with a slight frequency offset. We envisage that the interplay between photon-assisted tunneling and plasmon coupling within the MIM metamaterial/diode may substantially enhance the modulated terahertz photocurrent, and may therefore realize a practical high-power, room-temperature source in applications of terahertz electronics.