Sample records for gaas thin films

  1. GaAs thin films and methods of making and using the same

    DOEpatents

    Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

    2016-06-14

    Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

  2. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

    PubMed

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-20

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  3. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  4. Paths to light trapping in thin film GaAs solar cells.

    PubMed

    Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

    2018-03-19

    It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

  5. High-efficiency thin-film GaAs solar cells, phase2

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.

    1981-01-01

    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

  6. Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

    NASA Astrophysics Data System (ADS)

    Brammertz, Guy; Mols, Yves; Degroote, Stefan; Motsnyi, Vasyl; Leys, Maarten; Borghs, Gustaaf; Caymax, Matty

    2006-05-01

    Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650 °C by organometallic vapor phase epitaxy on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy. All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B) structure at an energy of ~1.5 eV and a broad inner-band-gap (IB) structure at an energy of ~1.1 eV. Small strain in the thin GaAs films causes the B2B structure to be separated into a light-hole and a heavy-hole peak. At 2.5 K the good structural quality of the thin GaAs films on Ge can be observed from the narrow excitonic peaks. Peak widths of less than 1 meV are measured. GaAs films with thickness smaller than 200 nm show B2B PL spectra with characteristics of an n-type doping level of approximately 1018 at./cm3. This is caused by heavy Ge diffusion from the substrate into the GaAs at the heterointerface between the two materials. The IB structure observed in all films consists of two Gaussian peaks with energies of 1.04 and 1.17 eV. These deep trapping states arise from Ge-based complexes formed within the GaAs at the Ge-GaAs heterointerface, due to strong diffusion of Ge atoms into the GaAs. Because of similarities with Si-based complexes, the peak at 1.04 eV was identified to be due to a GeGa-GeAs complex, whereas the peak at 1.17 eV was attributed to the GeGa-VGa complex. The intensity of the IB structure decreases strongly as the GaAs film thickness is increased. PL intensity of undoped GaAs films containing antiphase domains (APDs) is four orders of magnitude lower than for similar films without APDs. This reduction in intensity is due to the electrically active Ga-Ga and As-As bonds at the boundaries between the different APDs. When the Si doping level is increased, the PL intensity of the APD-containing films is increased again as well. A film containing APDs with a Si doping level of ~1018 at./cm3 has only a factor 10

  7. Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

    NASA Astrophysics Data System (ADS)

    Suhandi, A.; Tayubi, Y. R.; Arifin, P.

    2016-04-01

    Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

  8. Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

    NASA Technical Reports Server (NTRS)

    Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

    1990-01-01

    The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

  9. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brendel, V M; Garnov, S V; Yagafarov, T F

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry tomore » targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)« less

  10. Supernormal hardness increase of dilute Ga(As, N) thin films

    NASA Astrophysics Data System (ADS)

    Berggren, Jonas; Hanke, Michael; Luna, Esperanza; Trampert, Achim

    2017-03-01

    Hardness of epitaxial GaAs1-xNx films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs0.969N0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs1-xNx layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

  11. GaAs CLEFT solar cells for space applications. [CVD thin film growth technology

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.; Mcclelland, R. W.; King, B. D.

    1984-01-01

    Although GaAs solar cells are radiation-resistant and have high conversion efficiencies, there are two major obstacles that such cells must overcome before they can be widely adopted for space applications: GaAs wafers are too expensive and cells made from these wafers are too heavy. The CLEFT process permits the growth of thin single-crystal films on reusable substrates, resulting in a drastic reduction in both cell cost and cell weight. Recent advances in CLEFT technology have made it possible to achieve efficiencies of about 14 percent AM0 for 0.51-sq cm GaAs solar cells 5 microns thick with a 41-mil-thick coverglass. In preliminary experiments efficiencies close to 19 percent AM1 have been obtained for 10-micron-thick cells. It is suggested that the CLEFT technology should yield inexpensive, highly efficient modules with a beginning-of-life specific power close to 1 kW/kg (for a coverglass thickness of 4 mils).

  12. High-efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1979-01-01

    GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

  13. Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

    NASA Astrophysics Data System (ADS)

    Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

    2016-11-01

    Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

  14. Concepts for thin-film GaAs concentrator cells. [for solar photovoltaic space power systems

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Gale, R. P.; Mcclelland, R.; King, B.; Dingle, J.

    1989-01-01

    The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.

  15. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  16. Growth of semimetallic ErAs films epitaxially embedded in GaAs

    NASA Astrophysics Data System (ADS)

    Crook, Adam M.; Nair, Hari P.; Lee, Jong H.; Ferrer, Domingo A.; Akinwande, Deji; Bank, Seth R.

    2011-10-01

    We present models for the growth and electrical conductivity of ErAs films grown with the nanoparticle-seeded film growth technique. This growth mode overcomes the mismatch in rotational symmetry between the rocksalt ErAs crystal structure and the zincblende GaAs crystal structure. This results in films of ErAs grown through a thin film of GaAs that preserves the symmetry of the substrate. The conductivity of the films, as a function of film thickness, are investigated and a surface roughness model is used to explain observed trends. Transmission electron micrographs confirm the suppression of anti-phase domains. A simple diffusion model is developed to describe the diffusion and incorporation of surface erbium into subsurface ErAs layers and predict potential failure mechanisms of the growth method.

  17. Thin-Film Photovoltaic Solar Array Parametric Assessment

    NASA Technical Reports Server (NTRS)

    Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

    2000-01-01

    This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

  18. Reactions between palladium and gallium arsenide: Bulk versus thin-film studies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, J.; Hsieh, K.; Schulz, K.J.

    1988-01-01

    Reactions between Pd and GaAs have been studied using bulk-diffusion couples of Pd (approx.0.6 mm thick)/GaAs and thin-film Pd (50 and 160 nm)/GaAs samples. The sequence of phase formation at 600 /sup 0/C between bulk Pd and GaAs was established. Initial formation of the solution phase ..mu.. and the ternary phase T does not represent the stable configuration. The stable configuration is GaAs chemically bondepsilonchemically bondlambdachemically bond..gamma..chemically bond..nu..chemically bondPd and is termed the diffusion path between GaAs and Pd. The sequence of phase formation for the bulk-diffusion couples is similar at 500 /sup 0/C. Phase formation for the thin-film Pd/GaAsmore » specimens was studied at 180, 220, 250, 300, 350, 400, 450, 600, and 1000 /sup 0/C for various annealing times. The sequence of phase formation obtained from the thin-film experiments is rationalized readily from the known ternary phase equilibria of Ga--Pd--As and the results from the bulk-diffusion couples of Pd/GaAs. The thin-film results reported in the literature are likewise rationalized. The diffusion path concept provides a useful guide in understanding the phase formation in Pd--GaAs interface or any other M--GaAs interface. This information is important in designing a uniform, stable contact for the metallization of GaAs.« less

  19. High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Allard Jr, Lawrence Frederick

    2016-01-01

    (001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize themore » binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION« less

  20. Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Englhard, M.; Klemp, C.; Behringer, M.

    This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-raymore » diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.« less

  1. MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications.

    PubMed

    Kim, Jeong-Hun; Jung, Yong-Chul; Suh, Sang-Hee; Kim, Jin-Sang

    2006-11-01

    Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

  2. Metastable bcc phase formation in 3d ferromagnetic transition metal thin films sputter-deposited on GaAs(100) substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Minakawa, Shigeyuki, E-mail: s-minakawa@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Futamoto, Masaaki

    2015-05-07

    Co{sub 100−x}Fe{sub x} and Ni{sub 100−y}Fe{sub y} (at. %, x = 0–30, y = 0–60) films of 10 nm thickness are prepared on GaAs(100) substrates at room temperature by using a radio-frequency magnetron sputtering system. The detailed growth behavior is investigated by in-situ reflection high-energy electron diffraction. (100)-oriented Co and Ni single-crystals with metastable bcc structure are formed in the early stage of film growth, where the metastable structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the Co and the Ni films start to transform into more stable hcp and fcc structures through atomic displacements parallel to bcc(110) slide planes,more » respectively. The stability of bcc phase is improved by adding a small volume of Fe atoms into a Co film. The critical thickness of bcc phase formation is thicker than 10 nm for Co{sub 100−x}Fe{sub x} films with x ≥ 10. On the contrary, the stability of bcc phase for Ni-Fe system is less than that for Co-Fe system. The critical thicknesses for Ni{sub 100−y}Fe{sub y} films with y = 20, 40, and 60 are 1, 3, and 5 nm, respectively. The Co{sub 100−x}Fe{sub x} single-crystal films with metastable bcc structure formed on GaAs(100) substrates show in-plane uniaxial magnetic anisotropies with the easy direction along GaAs[011], similar to the case of Fe film epitaxially grown on GaAs(100) substrate. A Co{sub 100−x}Fe{sub x} film with higher Fe content shows a higher saturation magnetization and a lower coercivity.« less

  3. Thin Films and Interfaces of AN Organic Semiconductor: Perylenetetracarboxylic Dianhydride

    NASA Astrophysics Data System (ADS)

    Hirose, Yutaka

    Structural and electronic properties of thin films of an archetype organic molecular semiconductor, 3,4,9,10 -perylenetetracarboxylic dianhydride, (PTCDA) and of their interfaces are investigated. The first part of the thesis focuses on the growth of PTCDA thin films on graphite and GaAs. Molecular order in the direction parallel to the substrate is found to depend critically on the substrate surface properties, as revealed by marked differences in the crystallinity of films grown on graphite and Se-passivated GaAs surfaces (long range order), on the c(4 x 4) GaAs surface (medium range order), and on the (2 x 4)-c(2 x 8) GaAs surface (short range order). These results are discussed in terms of interface bonding between molecules and the substrate. The second part deals with the electronic and chemical structure of PTCDA thin films and the band lineup of the PTCDA/GaAs heterojunction investigated by Ultraviolet - and X-ray Photoemission Spectroscopies. A basic understanding of the valence band structure and chemical states is obtained with the help of a semi-empirical molecular orbital calculation. At the PTCDA/GaAs interface, the PTCDA highest occupied molecular orbital is found to be ~0.7 eV below the GaAs valence band maximum. This result is discussed in light of previous electrical measurements. Third, chemistry of metal deposition on PTCDA is investigated by synchrotron radiation photoemission spectroscopy. Al, Ti, In, and Sn are found to be highly reactive against PTCDA, yielding a considerable interfacial layer with a large density of states in the PTCDA gap. Ag and Au are found to be inert against PTCDA, producing abrupt interfaces. These results are found to be directly correlated with the electrical properties. Finally, chemistry of contacts formed by reversing the sequence of deposition, i.e. PTCDA on reactive metals (In, Sn, and Ti) is explored. The interfacial layers are found to be considerably smaller than for metals on PTCDA, in accordance with the

  4. Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

    NASA Astrophysics Data System (ADS)

    Rahman, Md. Shafiqur

    Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with

  5. In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang Zhibin; Hao Jianhua

    2012-09-01

    We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

  6. The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Yurjev, G. S.; Fainer, N. I.; Maximovskiy, E. A.; Kosinova, M. L.; Sheromov, M. A.; Rumyantsev, Yu. M.

    1998-02-01

    The structure of semiconductor and dielectric thin (100-300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station "Anomalous scattering" of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu 2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si 3N 4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.

  7. Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Mao, Howard; Alhalaili, Badriyah; Kaya, Ahmet; Dryden, Daniel M.; Woodall, Jerry M.; Islam, M. Saif

    2017-08-01

    A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.

  8. Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

    NASA Technical Reports Server (NTRS)

    Yeh, Y. C. M.; Wang, K. L.; Zwerdling, S.

    1982-01-01

    Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

  9. Properties of TiO2 thin films and a study of the TiO2-GaAs interface

    NASA Technical Reports Server (NTRS)

    Chen, C. Y.; Littlejohn, M. A.

    1977-01-01

    Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

  10. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitablemore » water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.« less

  11. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    NASA Astrophysics Data System (ADS)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  12. Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

    DTIC Science & Technology

    1995-10-05

    improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

  13. Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

    PubMed

    Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

    2016-03-01

    The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

  14. Electrical properties of spin coated ultrathin titanium oxide films on GaAs

    NASA Astrophysics Data System (ADS)

    Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

    2015-04-01

    In recent years, ultrathin (<50 nm) metal oxide films have been being extensively studied as high-k dielectrics for future metal oxide semiconductor (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

  15. Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

    2017-08-01

    High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

  16. Atomic moments in Mn 2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE PAGES

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; ...

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn 2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  17. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  18. Magneto-transport Characterization of Thin Film In-plane and Cross-plane Conductivity

    NASA Astrophysics Data System (ADS)

    Tang, Yang; Grayson, Matthew

    Thin films with highly anisotropic in-plane and cross-plane conductivities are widely used in devices, such as infrared emitters and detectors, and the proper magneto-transport characterization in both directions can reveal information about the doping density, impurities, carrier life times and band structure. This work introduces a novel method for deducing the complete anisotropic electrical conductivity tensor of such an anisotropic resistive layer atop a highly conducting bottom contact, which is a standard part of the device structure. Three strip-line contacts separated by a length scale comparable to the film thickness are applied atop the resistive thin film layer of interest, with the highly conducting back-plane as a back-contact. The potential distribution in the device is modeled, using both scaling and conformal transformation to minimize the calculated volume. As a proof of concept, triple strip-line devices for GaAs and GaAs/AlGaAs superlattice thin films are fabricated. To achieve narrow strip-line contacts with sub-micron scale widths, non-annealed Ni/Au contacts form ohmic contacts to a patterned n+-GaAs cap layer atop the anisotropic thin films. Preliminary experimental data will be presented as a validation of this method. Acknowledgment: Funded by AFOSR FA9550-15-1-0377 and AFOSR FA9550-15-1-0247.

  19. Velocity surface measurements for ZnO films over /001/-cut GaAs

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

    1994-01-01

    A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

  20. Doping assessment in GaAs nanowires.

    PubMed

    Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

    2018-06-08

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  1. Doping assessment in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

    2018-06-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

  2. Thin film characterization by laser interferometry combined with SIMS

    NASA Astrophysics Data System (ADS)

    Kempf, J.; Nonnenmacher, M.; Wagner, H. H.

    1988-10-01

    Thin film properties of technologically important materials (Si, GaAs, SiO2, WSix) have been measured by using a novel technique that combines secondary ion mass spectrometry (SIMS) and laser interferometry. The simultaneous measurement of optical phase and reflectance as well as SIMS species during ion sputtering yielded optical constants, sputtering rates and composition of thin films with high depth resolution. A model based on the principle of multiple reflection within a multilayer structure, which considered also transformation of the film composition in depth and time during sputtering, was fitted to the reflectance and phase data. This model was applied to reveal the transformation of silicon by sputtering with O{2/+} ions. Special attention was paid to the preequilibrium phase of the sputter process (amorphization, oxidation, and volume expansion). To demonstrate the analytical potential of our method the multilayer system WSix/poly-Si/SiO2/Si was investigated. The physical parameters and the stoichiometry of tungsten suicide were determined for annealed as well as deposited films. A highly sensitive technique that makes use of a Fabry-Perot etalon integrated with a Michelson type interferometer is proposed. This two-stage interferometer has the potential to profile a sample surface with subangstroem resolution.

  3. Structural and optical characteristics of GaAs films grown on Si/Ge substrates

    NASA Astrophysics Data System (ADS)

    Rykov, A. V.; Dorokhin, M. V.; Vergeles, P. S.; Baidus, N. V.; Kovalskiy, V. A.; Yakimov, E. B.; Soltanovich, O. A.

    2018-03-01

    A GaAs/AlAs heterostructure and a GaAs film grown on Si/Ge substrates have been fabricated and studied. A Ge buffer on a silicon substrate was fabricated using the MBE process. A3B5 films were grown by MOCVD at low pressures. Photoluminescence spectroscopy was used to define the optical quality of A3B5 films. Structural properties were investigated using the electron beam induced current method. It was established that despite a rather high density of dislocations on the epitaxial layers, the detected photoluminescence radiation of layers indicates the acceptable crystalline quality of the top GaAs layer.

  4. Pronounced pre-martensitic anomaly in the magnetization on Ni2MnGa thin films

    NASA Astrophysics Data System (ADS)

    Neckel, I. T.; Müller, C.; Nobrega, K. Z.; Dartora, C. A.; Schreiner, W. H.; Mosca, D. H.

    2018-05-01

    We have prepared [110]-textured Ni2MnGa thin films exhibiting an unusual pre-martensitic transition accompanied by an extremely large magnetization change. The thin films were grown by molecular beam epitaxy directly on epi-ready GaAs(111)B. Crystalline structure was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by x-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the film exhibits cubic crystalline structure (L2 1) at room temperature with lattice parameter a = 5.88 Å which undergoes martensitic transition. Magnetic characterization shows ferromagnetic behavior at room temperature with Curie temperature higher than room temperature. Martensitic transformation occurs at TM ∼ 185 K. A phenomenological model based on Landau theory of phase transformation was developed to explain the anomalous pre-martensitic transition at ∼285 K.

  5. Transverse spin Seebeck effect versus anomalous and planar Nernst effects in Permalloy thin films.

    PubMed

    Schmid, M; Srichandan, S; Meier, D; Kuschel, T; Schmalhorst, J-M; Vogel, M; Reiss, G; Strunk, C; Back, C H

    2013-11-01

    Transverse magnetothermoelectric effects are studied in Permalloy thin films grown on MgO and GaAs substrates and compared to those grown on suspended SiN(x) membranes. The transverse voltage along platinum strips patterned on top of the Permalloy films is measured versus the external magnetic field as a function of the angle and temperature gradients. After the identification of the contribution of the planar and anomalous Nernst effects, we find an upper limit for the transverse spin Seebeck effect, which is several orders of magnitude smaller than previously reported.

  6. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE PAGES

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; ...

    2014-09-01

    The high balance-of-system costs of photovoltaic (PV) installations indicate that reductions in cell $/W costs alone are likely insufficient for PV electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which yield both high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the difficulty of scaling the metal-organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors suchmore » as arsine and trimethyl gallium, respectively. In this study, we describe GaAs films made by an alternative close-spaced vapor transport (CSVT) technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient in order to deposit crystalline films with similar electronic properties to that of GaAs deposited by MOCVD. CSVT is similar to the vapor transport process used to deposit CdTe thin films and is thus a potentially scalable low-cost route to GaAs thin films.« less

  7. Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films

    NASA Astrophysics Data System (ADS)

    Baoshan, Jia; Yunhua, Wang; Lu, Zhou; Duanyuan, Bai; Zhongliang, Qiao; Xin, Gao; Baoxue, Bo

    2012-08-01

    Amorphous GaAs1-xNx (a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model.

  8. Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

    NASA Astrophysics Data System (ADS)

    Chi, Hang; Uher, Ctirad

    2014-03-01

    At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

  9. Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane

    NASA Astrophysics Data System (ADS)

    Eres, Djula; Lowndes, Douglas H.; Tischler, J. Z.; Sharp, J. W.; Geohegan, D. B.; Pennycook, S. J.

    1989-08-01

    Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05-40 mTorr for substrate temperatures of 380-600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross-section transmission electron microscopy, and in situ reflectivity measurements. The amorphous-to-crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge-bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.

  10. Fermi level pinning at epitaxial Si on GaAs(100) interfaces

    NASA Astrophysics Data System (ADS)

    Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

    1991-12-01

    GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

  11. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  12. LEED and AES characterization of the GaAs(110)-ZnSe interface

    NASA Technical Reports Server (NTRS)

    Tu, D.-W.; Kahn, A.

    1984-01-01

    In this paper, a study is conducted of the composition and structure of epitaxial ZnSe films grown by congruent evaporation on GaAs(110) at a rate of 2 A/min. It is found that the films grown on 300 C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Films grown at higher temperature (T greater than 350-400 C) are Se rich. The crystallinity of films grown at 300 C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs-ZnSe interface geometry seems to be dominated by the Se-substrate bonds. The adsorption of Se, during the formation of very thin ZnSe films (2-3 A), produces a (1 x 2) LEED pattern and modifications of the LEED I-V profiles, which probably indicate a change in the substrate atomic relaxation.

  13. Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

    NASA Technical Reports Server (NTRS)

    Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

    1994-01-01

    A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

  14. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor); Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  15. ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei

    1995-01-01

    A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  16. Dewetting of Thin Polymer Films

    NASA Astrophysics Data System (ADS)

    Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

    2001-03-01

    DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

  17. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  18. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  19. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  20. High-reliability GaAs image intensifier with unfilmed microchannel plate

    NASA Astrophysics Data System (ADS)

    Bender, Edward J.; Estrera, Joseph P.; Ford, C. E.; Giordana, A.; Glesener, John W.; Lin, P. P.; Nico, A. J.; Sinor, Timothy W.; Smithson, R. H.

    1999-07-01

    Current GaAs image intensifier technology requires that the microchannel plate (MCP) have a thin dielectric film on the side facing the photocathode. This protective coating substantially reduces the amount of outgassing of ions and neutral species from the microchannels. The prevention of MCP outgassing is necessary in order to prevent the `poisoning' of the Cs:O surface on the GaAs photocathode. Many authors have experimented with omitting the MCP coating. The results of such experiments invariably lead to an intensifier with a reported useful life of less than 100 hours, due to contamination of the Cs:O layer on the photocathode. Unfortunately, the MCP film is also a barrier to electron transport within the intensifier. Substantial enhancement of the image intensifier operating parameters is the motivation for the removal of the MCP film. This paper presents results showing for the first time that it is possible to fabricate a long lifetime image intensifier with a single uncoated MCP.

  1. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Goloshchapov, D. L.; Lenshin, A. S.

    Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

  2. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  3. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  4. Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, H. F.; Chua, S. J.; Hu, G. X.

    2007-10-15

    X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

  5. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  6. Structural and electrical characteristics of CoGe(2) alloy films deposited heteroepitaxially on GaAs(100) using partially ionized beam deposition

    NASA Astrophysics Data System (ADS)

    Mello, Kevin Edward

    The partially ionized beam deposition system was utilized to deposit CoGesb2 thin films heteroepitaxially on GaAs(100) substrates in a conventional vacuum. The CoGesb2 films were structurally characterized using conventional 2theta diffraction, reflection X-ray pole figure analysis, and alpha particle channeling techniques. Three distinct crystallographic relationships of the CoGesb2 films to the GaAs(100) substrates were observed, dependent upon the substrate temperature and Gesp+ ion energy used during deposition. The CoGesb2(001) (100)sp°GaAs(100) (001) orientation, which has the smallest lattice mismatch to GaAs(100), was found to occur for depositions performed at a substrate temperature during deposition near 280sp°C with approximately 1160 eV Gesp+ ions. Lowering the substrate temperature or reducing the Gesp+ ion energy results in CoGesb2(100) orientation domination with CoGe2(100) (010)sp°GaAs(100) (001) and CoGesb2(100) (001)sp°GaAs(100) (001). Substrate temperature alone was seen to produce only the CoGesb2(100) orientation. For CoGesb2(001) films, additional energy was required from Gesp+ ions in the evaporant stream. Angular yield profiles for axial Hesp{++} ion channeling yielded values for the minimum yield, Ysb{min}, of 25% for the CoGesb2(001) orientation and 34% for the CoGesb2(100) orientation. The critical angle for channeling, Psisb{c}, was measured to be 1.0sp° for both orientations. Channeling theory was used to predict the minimum yield and critical angle for each orientation. The theoretical values agreed qualitatively with the experimentally measured values, and the theory correctly predicted the lower minimum yield for the CoGesb2(001) orientation. Annealing the films to allow for epitaxial grain growth resulted in orientation selection of CoGesb2(001) at the expense of CoGesb2(100), exposing CoGesb2(100) as a metastable orientation. The CoGesb2(001) films were stable up to 500sp°C, 30 minute anneals, showing no orientation changes

  7. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Lai, Billy; Lau, Kei May

    2017-10-01

    We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

  8. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  9. Drop dynamics on a thin film: Thin film rupture

    NASA Astrophysics Data System (ADS)

    Carlson, Andreas; Kim, Pilnam; Stone, Howard A.

    2011-11-01

    The spreading of a water drop on an oil film that covers a solid substrate is a common event in many industrial processes. We study in experiments the dynamics of a water drop on a thin silicone oil film and quantify its interaction with the solid substrate that supports the film. The oil film becomes unstable and ruptures for solids that are hydrophilic. We determine the ``waiting time,'' the time it takes the water drop to drain the silicone film. This timescale is found to highly depend on how well water wets the solid, illustrating the interplay between intermolecular and hydrodynamic forces in the phenomenon. A phase diagram for the thin film stability is extracted based on waters equilibrium contact angle on the solid, which shows that we can either promote or inhibit de-wetting. As water comes in direct contact with the solid, it spreads and peels off the silicone film. We show the influence of viscosity, equilibrium contact angle and film height on the opening radius of the hole formed as the solid de-wets.

  10. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  11. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    NASA Astrophysics Data System (ADS)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  12. GaAs shallow-homojunction solar cells

    NASA Technical Reports Server (NTRS)

    Fan, J. C. C.

    1981-01-01

    The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

  13. Laser Based Color Film Recorder System With GaAs Microlaser

    NASA Astrophysics Data System (ADS)

    Difrancesco, David J.

    1989-07-01

    In 1984 Pixar's research and development group built and applied to the motion-picture arts at Lucasfilm's ILM facility a three color laser based film scanner/recorder system. The digital film printer is capable of reading and writing 35mm film formats on a variety of film stocks. The system has been used in award-winning special-effects work, and has been operated in a normal production environment since that time. The primary objective was to develop a full color high resolution system, free from scan artifacts, enabling traditionally photographed motion-picture film to be inter-cut with digital raster image photography. Its use is applied to the art of blue-screen traveling-matte cinematography for motion pic-ture special effects. The system was designed using the Pixar Image Computer and conventional gas laser technology as the illumination source. This paper will discuss recent experimental work in the application of GaAs microlaser technology to a digital film printing system of the future.

  14. Brillouin Scattering from Opaque Semiconducting Alloys and Thin Films.

    NASA Astrophysics Data System (ADS)

    Krabach, Timothy Norbert

    Brillouin scattering spectra were measured in MBE grown single crystal films of Al_{ rm x}Ga_{rm 1 - x}As alloys and Al_{ rm x}Ga_{rm 1 - x}As-GaAs superlattices on GaAs substrates, and GaAs films grown on miscut Si substrates. To detect the Brillouin shifted light against the strong elastic background present in opaque materials, a tandem multipass Fabry-Perot system was designed and constructed, providing high resolution and contrast. Scattering from both surface and bulk acoustic waves were used to derive information on the elastic and dielectric constants of Al_{rm x}Ga_{rm 1 - x} As alloys. The surface acoustic wave velocities along the (100) and (110) axes were measured for a number of aluminum concentrations. In samples that were transparent to the exciting laser frequency, a leaky surface longitudinal wave was also observed. By fitting to this data, the elastic constants as a function of alloy concentration were found to be c_{11} = 11.88 + 0.05x, c_{12} = 5.38 + 1.6x, and c_{44} = 5.95 - .8x (times 10^{10} dyn/cm ^2). Scattering from bulk acoustic waves was used to measure the complex index of refraction. The results agree very closely with previous ellipsometric data. Spectra were taken on two superlattices and compared to an alloy of the same average aluminum concentration. No differences were seen in the acoustic velocities or the index of refraction. Brillouin spectra taken of GaAs films on Si exhibited peaks due to acoustic waves trapped in the film. The dispersion curves of these modes as a function of wavevector were fitted by using the bulk elastic constants of GaAs and Si. The good fit obtained, and the narrowness of the peaks, are corroborating evidence of the high crystalline quality of these films.

  15. ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

    NASA Technical Reports Server (NTRS)

    Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei; Kim, Yoonkee; Hunt, William D.

    1995-01-01

    A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  16. Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

    1993-01-01

    A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

  17. Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

    NASA Technical Reports Server (NTRS)

    Vonross, O.

    1980-01-01

    A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

  18. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  19. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ibanez, J.; Hernandez, S.; Alarcon-Llado, E.

    2008-08-01

    We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and AlN layers and c-oriented wurtzite GaN, AlN, and Al{sub x}Ga{sub 1-x}N (x<0.3) layers were grown by molecular beam epitaxy on GaAs and Si(111) substrates, respectively. The Berreman effect allows us to observe simultaneously the transverse optic and the longitudinal optic phonons of both the cubic and the hexagonal films as transmission minima in the infrared spectra acquired with obliquely incident radiation. We discuss our results in terms of the relevant electromagnetic theory of infrared transmission in cubic and wurtzite thin films. We compare the infrared resultsmore » with visible Raman-scattering measurements. In the case of films with low scattering volumes and/or low Raman efficiencies and also when the Raman signal of the substrate material obscures the weaker peaks from the nitride films, we find that the Berreman technique is particularly useful to complement Raman spectroscopy.« less

  20. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  1. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  2. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  3. Defects in GaAs films grown by MOMBE

    NASA Astrophysics Data System (ADS)

    Werner, K.; Heinecke, H.; Weyers, M.; Lüth, H.; Balk, P.

    1987-02-01

    The nature and densities of the defects obtained in MOMBE GaAs films have been studied. In addition to particulate matter deposited on the surface, imperfections in the substrate will lead to defect generation. Furthermore, the rate of generation is strongly affected by the ratio of the pressures of the group III alkyl and the group V hydride in the molecular beams and by the growth temperature, also on defect-free substrates. Doping has no effect on the defect structure of the surface. By proper choice of experimental conditions defect densities below 100 cm -2 may be consistently obtained.

  4. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  5. Film and membrane-model thermodynamics of free thin liquid films.

    PubMed

    Radke, C J

    2015-07-01

    In spite of over 7 decades of effort, the thermodynamics of thin free liquid films (as in emulsions and foams) lacks clarity. Following a brief review of the meaning and measurement of thin-film forces (i.e., conjoining/disjoining pressures), we offer a consistent analysis of thin-film thermodynamics. By carefully defining film reversible work, two distinct thermodynamic formalisms emerge: a film model with two zero-volume membranes each of film tension γ(f) and a membrane model with a single zero-volume membrane of membrane tension 2γ(m). In both models, detailed thermodynamic analysis gives rise to thin-film Gibbs adsorption equations that allow calculation of film and membrane tensions from measurements of disjoining-pressure isotherms. A modified Young-Laplace equation arises in the film model to calculate film-thickness profiles from the film center to the surrounding bulk meniscus. No corresponding relation exists in the membrane model. Illustrative calculations of disjoining-pressure isotherms for water are presented using square-gradient theory. We report considerable deviations from Hamaker theory for films less than about 3 nm in thickness. Such thin films are considerably more attractive than in classical Hamaker theory. Available molecular simulations reinforce this finding. Copyright © 2014 Elsevier Inc. All rights reserved.

  6. Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

    2000-11-01

    Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

  7. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  8. Temperature Behavior of Thin Film Varactor

    DTIC Science & Technology

    2012-01-01

    Temperature Behavior of Thin Film Varactor By Richard X. Fu ARL-TR-5905 January 2012...Thin Film Varactor Richard X. Fu Sensors and Electron Devices Directorate, ARL...DD-MM-YYYY) January 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Temperature Behavior of Thin Film Varactor 5a

  9. Self-Limited Growth in Pentacene Thin Films

    PubMed Central

    2017-01-01

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

  10. Self-Limited Growth in Pentacene Thin Films.

    PubMed

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  11. Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

    NASA Astrophysics Data System (ADS)

    Babilotte, P.; Morozov, E.; Ruello, P.; Mounier, D.; Edely, M.; Breteau, J.-M.; Bulou, A.; Gusev, V.

    2007-12-01

    We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wideband acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (approx 680nm), short acoustic disturbances of approx 7ps of duration have been registered.

  12. Metallic Thin-Film Bonding and Alloy Generation

    NASA Technical Reports Server (NTRS)

    Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  13. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  14. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Fedyukin, A. V.; Arsentyev, I. N.

    The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free chargemore » carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.« less

  15. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  16. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  17. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  18. Internal stress-assisted epitaxial lift-off process for flexible thin film (In)GaAs solar cells on metal foil

    NASA Astrophysics Data System (ADS)

    Kim, Youngjo; Kim, Kangho; Jung, Sang Hyun; Kim, Chang Zoo; Shin, Hyun-Beom; Choi, JeHyuk; Kang, Ho Kwan

    2017-12-01

    Flexible thin film (In)GaAs solar cells are grown by metalorganic chemical vapor deposition on GaAs substrates and transferred to 30 μm thick Au foil by internal stress-assisted epitaxial lift-off processes. The internal stress is induced by replacing the solar cell epi-layers from GaAs to In0.015Ga0.985As, which has a slightly larger lattice constant. The compressive strained layer thickness was varied from 0 to 4.5 μm to investigate the influence of the internal stress on the epitaxial lift-off time. The etching time in the epitaxial lift-off process was reduced from 36 to 4 h by employing a GaAs/In0.015Ga0.985As heterojunction structure that has a compressive film stress of -59.0 MPa. We found that the partially strained epi-structure contributed to the much faster lateral etching rate with spontaneous bending. Although an efficiency degradation problem occurred in the strained solar cell, it was solved by optimizing the epitaxial growth conditions.

  19. Nanocrystal thin film fabrication methods and apparatus

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  20. Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

  1. Thin-film rechargeable lithium batteries

    NASA Astrophysics Data System (ADS)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1994-11-01

    Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

  2. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  3. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  4. Field dependent magnetic anisotropy of Ga0.2Fe0.8 thin films

    NASA Astrophysics Data System (ADS)

    Resnick, Damon A.; McClure, A.; Kuster, C. M.; Rugheimer, P.; Idzerda, Y. U.

    2011-04-01

    Using longitudinal MOKE in combination with a variable strength rotating magnetic field, called the rotational MOKE (ROTMOKE) method, we show that the magnetic anisotropy for a Ga0.2Fe0.8 single crystal film with a thickness of 17 nm, grown on GaAs (001) with a thick ZnSe buffer layer, depends linearly on the strength of the applied magnetic field. The torque moment curves generated using ROTMOKE are well fit with a model that accounts for the uniaxial, cubic, or fourfold anisotropy, as well as additional terms with a linear dependence on the applied magnetic field. The uniaxial and cubic anisotropy fields, taken from both the hard and the easy axis scans, are seen to remain field independent. The field dependent terms are evidence of a large affect of the magnetostriction and its contribution to the effective magnetic anisotropy in GaxFe1-x thin films.

  5. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  6. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Juho; Song, Kwangsun; Kim, Namyun

    2016-06-20

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

  7. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  8. Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

    Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

  9. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  10. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Science.gov Websites

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the National Laboratory developed low-cost transparent encapsulation schemes for CIGS cells that reduced power

  11. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  12. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  13. Thermo-optically tunable thin film devices

    NASA Astrophysics Data System (ADS)

    Domash, Lawrence H.

    2003-10-01

    We report advances in tunable thin film technology and demonstration of multi-cavity tunable filters. Thin film interference coatings are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable components based on the properties of semiconductor thin films with large thermo-optic coefficients. The technology is based on amorphous silicon deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable thin films can be constructed in sophisticated multi-cavity, multi-layer optical designs.

  14. Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

    NASA Technical Reports Server (NTRS)

    Whitcomb, John D.

    1989-01-01

    Strain-energy release rates are often used to predict when delamination growth will occur in laminates under compression. Because of the inherently high computational cost of performing such analyses, less rigorous analyses such as thin-film plate analysis were used. The assumptions imposed by plate theory restrict the analysis to the calculation of total strain energy, G(sub t). The objective is to determine the accuracy of thin-film plate analysis by comparing the distribution of G(sub t) calculated using fully three dimensional (3D), thin-film 3D, and thin-film plate analyses. Thin-film 3D analysis is the same as thin-film plate analysis, except 3D analysis is used to model the sublaminate. The 3D stress analyses were performed using the finite element program NONLIN3D. The plate analysis results were obtained from published data, which used STAGS. Strain-energy release rates were calculated using variations of the virtual crack closure technique. The results demonstrate that thin-film plate analysis can predict the distribution of G(sub t) quite well, at least for the configurations considered. Also, these results verify the accuracy of the strain-energy release rate procedure for plate analysis.

  15. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  16. Temperature dependence of LRE-HRE-TM thin films

    NASA Astrophysics Data System (ADS)

    Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

    2003-04-01

    Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

  17. Method of producing amorphous thin films

    DOEpatents

    Brusasco, Raymond M.

    1992-01-01

    Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

  18. Method of producing amorphous thin films

    DOEpatents

    Brusasco, R.M.

    1992-09-01

    Disclosed is a method of producing thin films by sintering which comprises: (a) coating a substrate with a thin film of an inorganic glass forming material possessing the capability of being sintered; and (b) irradiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed. 4 figs.

  19. Structures, Properties and Defects of SrTiO3/GaAs Hetero-interfaces

    NASA Astrophysics Data System (ADS)

    Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Öğüt, Serdar; Klie, Robert

    SrTiO3 thin film can be epitaxially grown on GaAs substrate and used as a platform for growing other oxides to create functional metal-oxide-semiconductor devices, where a high-quality SrTiO3/GaAs interface is essential. We studied the structural and electronic properties of SrTiO3/GaAs hetero-interfaces at atomic level using scanning transmission electron microscopy and first-principles calculations. Our results suggest the preferred termination of GaAs (001) is significantly dependent on the oxygen concentration in the first oxide layer. The favorable interface structure is characterized as oxygen-deficient SrO in contact with arsenic and is observed in both experiment and simulation. The electronic properties are calculated and found to be tunable by interfacial defects such as oxygen, gallium and arsenic vacancies. This work was supported by the National Science Foundation (Grant No. DMR-1408427). This work made use of instruments in the Electron Microscopy Service and the High Performance Computing Clusters at University of Illinois at Chicago.

  20. Barium ferrite thin-film recording media

    NASA Astrophysics Data System (ADS)

    Sui, Xiaoyu; Scherge, Matthias; Kryder, Mark H.; Snyder, John E.; Harris, Vincent G.; Koon, Norman C.

    1996-03-01

    Both longitudinal and perpendicular barium ferrite thin films are being pursued as overcoatless magnetic recording media. In this paper, prior research on thin-film Ba ferrite is reviewed and the most recent results are presented. Self-textured high-coercivity longitudinal Ba ferrite thin films have been achieved using conventional rf diode sputtering. Microstructural studies show that c-axis in-plane oriented grains have a characteristic acicular shape, while c-axis perpendicularly oriented grains have a platelet shape. Extended X-ray absorption fine structure (EXAFS) measurements indicate that the crystal orientations are predetermined by the structural anisotropy in the as-sputtered 'amorphous' state. Recording tests on 1500 Oe coercivity longitudinal Ba ferrite disks show performance comparable with that of a 1900 Oe Co alloy disk. To further improve the recording performance, both grain size and aspect ratio need to be reduced. Initial tribological tests indicate high hardness of Ba ferrite thin films. However, surface roughness needs to be reduced. For future ultrahigh-density contact recording, it is believed that perpendicular recording may be used. A thin Pt underlayer has been found to be capable of producing Ba ferrite thin films with excellent c-axis perpendicular orientation.

  1. Gas Permeation in Thin Glassy Polymer Films

    NASA Astrophysics Data System (ADS)

    Paul, Donald

    2011-03-01

    The development of asymmetric and composite membranes with very thin dense ``skins'' needed to achieve high gas fluxes enabled the commercial use of membranes for molecular level separations. It has been generally assumed that these thin skins, with thicknesses of the order of 100 nm, have the same permeation characteristics as films with thicknesses of 25 microns or more. Thick films are easily made in the laboratory and have been used extensively for measuring permeation characteristics to evaluate the potential of new polymers for membrane applications. There is now evidence that this assumption can be in very significant error, and use of thick film data to select membrane materials or predict performance should be done with caution. This presentation will summarize our work on preparing films of glassy polymers as thin as 20 nm and characterizing their behavior by gas permeation, ellipsometry and positron annihilation lifetime spectroscopy. Some of the most important polymers used commercially as gas separation membranes, i.e., Matrimid polyimide, polysulfone (PSF) and poly(2,6-dimethyl-1,4-phenylene oxide) (PPO), have been made into well-defined thin films in our laboratories by spin casting techniques and their properties studied using the techniques we have developed. These thin films densify (or physically age) much faster than thicker films, and, as result, the permeability decreases, sometimes by several-fold over weeks or months for thin films. This means that the properties of these thin films can be very different from bulk films. The techniques, interpretations and implications of these observations will be discussed. In a broader sense, gas permeation measurements can be a powerful way of developing a better understanding of the effects of polymer chain confinement and/or surface mobility on the behavior of thin films.

  2. Broadly tunable thin-film intereference coatings: active thin films for telecom applications

    NASA Astrophysics Data System (ADS)

    Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

    2003-06-01

    Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

  3. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

    NASA Astrophysics Data System (ADS)

    Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

    2014-12-01

    High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

  4. GaAs and 3-5 compound solar cells status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.

    1984-01-01

    Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

  5. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  6. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  7. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  8. Self-assembly of dodecaphenyl POSS thin films

    NASA Astrophysics Data System (ADS)

    Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

    2017-12-01

    The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

  9. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  10. Rare-earth gate oxides for GaAs MOSFET application

    NASA Astrophysics Data System (ADS)

    Kwon, Kwang-Ho; Yang, Jun-Kyu; Park, Hyung-Ho; Kim, Jongdae; Roh, Tae Moon

    2006-08-01

    Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2O 3, (Gd xLa 1- x) 2O 3, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd xLa 1- x) 2O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2O 3. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2. Energy band parameters such as Δ EC, Δ EV, and Eg were effectively controlled by the film composition.

  11. An overview of thin film nitinol endovascular devices.

    PubMed

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  12. Piezoelectric thin films and their applications for electronics

    NASA Astrophysics Data System (ADS)

    Yoshino, Yukio

    2009-03-01

    ZnO and AlN piezoelectric thin films have been studied for applications in bulk acoustic wave (BAW) resonator. This article introduces methods of forming ZnO and AlN piezoelectric thin films by radio frequency sputtering and applications of BAW resonators considering the relationship between the crystallinity of piezoelectric thin films and the characteristics of the BAW resonators. Using ZnO thin films, BAW resonators were fabricated for a contour mode at 3.58 MHz and thickness modes from 200 MHz to 5 GHz. The ZnO thin films were combined with various materials, substrates, and thin films to minimize the temperature coefficient of frequency (TCF). The minimum TCF of BAW resonators was approximately 2 ppm/°C in the range -20 to 80 °C. The electromechanical coupling coefficient (k2) in a 1.9 GHz BAW resonator was 6.9%. Using AlN thin films, 5-20 GHz BAW resonators with an ultrathin membrane were realized. The membrane thickness of a 20 GHz BAW resonator was about 200 nm, k2 was 6.1%, and the quality factor (Q) was about 280. Q decreased with increasing resonant frequency. The value of k2 is almost the same for 5-20 GHz resonators. This result could be obtained by improving the thickness uniformity, by controlling internal stress of thin films, and by controlling the crystallinity of AlN piezoelectric thin film.

  13. Geometrical shape design of nanophotonic surfaces for thin film solar cells.

    PubMed

    Nam, W I; Yoo, Y J; Song, Y M

    2016-07-11

    We present the effect of geometrical parameters, particularly shape, on optical absorption enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide (GaAs) using a rigorous coupled wave analysis (RCWA) method. It is discovered that the "sweet spot" that maximizes efficiency of solar cells exists for the design of nanophotonic surfaces. For the case of ultrathin, rod array is practical due to the effective optical resonances resulted from the optimum geometry whereas parabola array is viable for relatively thicker cells owing to the effective graded index profile. A specific value of thickness, which is the median value of other two devices tailored by rod and paraboloid, is optimized by truncated shape structure. It is therefore worth scanning the optimum shape of nanostructures in a given thickness in order to achieve high performance.

  14. Stretchable, adhesive and ultra-conformable elastomer thin films.

    PubMed

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

    2016-11-16

    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  15. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  16. Development of High Resistive and High Magnetization Soft Thin Film and Fabrication of Thin Film Inductors

    DTIC Science & Technology

    2004-11-01

    properties of Co- doped ZnO nanocluster films", .J. of Appl. Phys. in press, 2005 2. Presentations (contributed): Conference Contributions: 1) Y. Qiang...gigahertz band applications. The effects of substrates bias, sputter parameters, and seed-layer have thoroughly been investigated. The magnetic...Adequate properties of soft magnetic thin film were evaluated by an analytical calculation [1] to meet the requirement for gigahertz band thin-film

  17. Growth and characterization of MnGa thin films with perpendicular magnetic anisotropy on BiSb topological insulator

    NASA Astrophysics Data System (ADS)

    Duy Khang, Nguyen Huynh; Ueda, Yugo; Yao, Kenichiro; Hai, Pham Nam

    2017-10-01

    We report on the crystal growth as well as the structural and magnetic properties of Bi0.8Sb0.2 topological insulator (TI)/MnxGa1-x bi-layers grown on GaAs(111)A substrates by molecular beam epitaxy. By optimizing the growth conditions and Mn composition, we were able to grow MnxGa1-x thin films on Bi0.8Sb0.2 with the crystallographic orientation of Bi0.8Sb0.2(001)[1 1 ¯ 0]//MnGa (001)[100]. Using magnetic circular dichroism (MCD) spectroscopy, we detected both the L10 phase ( x < 0.6 ) and the D022 phase ( x > 0.6 ) of MnxGa1-x. For 0.50 ≤ x ≤ 0.55 , we obtained ferromagnetic L10-MnGa thin films with clear perpendicular magnetic anisotropy, which were confirmed by MCD hysteresis, anomalous Hall effect as well as superconducting quantum interference device measurements. Our results show that the BiSb/MnxGa1-x bi-layer system is promising for perpendicular magnetization switching using the giant spin Hall effect in TIs.

  18. Black thin film silicon

    NASA Astrophysics Data System (ADS)

    Koynov, Svetoslav; Brandt, Martin S.; Stutzmann, Martin

    2011-08-01

    "Black etching" has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The present work is focused on the optical effects induced by the black-etching treatment on hydrogenated amorphous and microcrystalline silicon thin films, in particular with respect to their application in solar cells. In addition to a strong reduction of the reflectivity, efficient light trapping within the modified thin films is found. The enhancement of the optical absorption due to the light trapping is investigated via photometric measurements and photothermal deflection spectroscopy. The correlation of the texture morphology (characterized via atomic force microscopy) with the optical effects is discussed in terms of an effective medium with gradually varying optical density and in the framework of the theory of statistical light trapping. Photoconductivity spectra directly show that the light trapping causes a significant prolongation of the light path within the black silicon films by up to 15 μm for ˜1 μm thick films, leading to a significant increase of the absorption in the red.

  19. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  20. Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

    PubMed

    Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2018-05-30

    Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

  1. Dynamic delamination of patterned thin films

    NASA Astrophysics Data System (ADS)

    Kandula, Soma S. V.; Tran, Phuong; Geubelle, Philippe H.; Sottos, Nancy R.

    2008-12-01

    We investigate laser-induced dynamic delamination of a patterned thin film on a substrate. Controlled delamination results from our insertion of a weak adhesion region beneath the film. The inertial forces acting on the weakly bonded portion of the film lead to stable propagation of a crack along the film/substrate interface. Through a simple energy balance, we extract the critical energy for interfacial failure, a quantity that is difficult and sometimes impossible to characterize by more conventional methods for many thin film/substrate combinations.

  2. New Passivation Methods of GaAs.

    DTIC Science & Technology

    1980-01-01

    Fabrication of Thin Nitride Layers on GaAs 33 - 35 CHAPTER 7 Passivation of InGaAsP 36 - 37 CHAPTER 8 Emulsions on GaAs Surfaces 38 - 42 APPENDIX...not yet given any useful results. The deposition of SiO2 by using emulsions is pursued and first results on the possibility of GaAs doping are...glycol-tartaric acid based aqueous solution was used in order to anodically oxidise the gate notch after the source and drain ohmic contacts were formed

  3. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  4. Thermal conductivity model for nanoporous thin films

    NASA Astrophysics Data System (ADS)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  5. Characterization of aluminum selenide bi-layer thin film

    NASA Astrophysics Data System (ADS)

    Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

    2018-05-01

    The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

  6. Low-Cost Detection of Thin Film Stress during Fabrication

    NASA Technical Reports Server (NTRS)

    Nabors, Sammy A.

    2015-01-01

    NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

  7. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

    2010-08-31

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  8. Method for making surfactant-templated thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

    2002-01-01

    An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  9. Investigation of ZnSe-coated silicon substrates for GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

    1993-01-01

    Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

  10. Methods for preparing colloidal nanocrystal-based thin films

    DOEpatents

    Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

    2016-05-10

    Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

  11. The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

    NASA Astrophysics Data System (ADS)

    Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

    2018-01-01

    It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

  12. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  13. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Weiquan; Becker, Jacob; Liu, Shi

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less

  14. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    NASA Astrophysics Data System (ADS)

    Jeon, Jun-Young; Ha, Tae-Jun

    2017-08-01

    In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  15. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    NASA Astrophysics Data System (ADS)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  16. Applications of Thin Film Thermocouples for Surface Temperature Measurement

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Holanda, Raymond

    1994-01-01

    Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

  17. Nanoporous structures on ZnO thin films

    NASA Astrophysics Data System (ADS)

    Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

    2010-01-01

    Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

  18. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  19. In-space fabrication of thin-film structures

    NASA Technical Reports Server (NTRS)

    Lippman, M. E.

    1972-01-01

    A conceptual study of physical vapor-deposition processes for in-space fabrication of thin-film structures is presented. Potential advantages of in-space fabrication are improved structural integrity and surface reflectivity of free-standing ultra-thin films and coatings. Free-standing thin-film structures can find use as photon propulsion devices (solar sails). Other applications of the concept involve free-standing shadow shields, or thermal control coatings of spacecraft surfaces. Use of expendables (such as booster and interstage structures) as source material for the physical vapor deposition process is considered. The practicability of producing thin, textured, aluminum films by physical vapor deposition and subsequent separation from a revolving substrate is demonstrated by laboratory experiments. Heating power requirement for the evaporation process is estimated for a specific mission.

  20. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  1. Deposition and characterization of ZnSe nanocrystalline thin films

    NASA Astrophysics Data System (ADS)

    Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

    2018-02-01

    ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

  2. Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki

    Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

  3. Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

    DOE PAGES

    El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki; ...

    2017-06-14

    Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

  4. Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

    NASA Astrophysics Data System (ADS)

    Eshaghi, F.; Zolanvari, A.

    2017-04-01

    In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

  5. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  6. First principle calculation in FeCo overlayer on GaAs substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jain, Vishal, E-mail: vjain045@gmail.com; Lakshmi, N.; Jain, Vivek Kumar

    In this work the first principle electronic structure calculation is reported for FeCo/GaAs thin film system to investigate the effect of orientation on the electronic structural properties. A unit cell describing FeCo layers and GaAs layers is constructed for (100), (110), (111) orientation with vacuum of 30Å to reduce dimensions. It is found that although the (110) orientation is energetically more favorable than others, the magnetic moment is quite large in (100) and (111) system compared to the (110) and is due to the total DOS variation with orientation.

  7. MCP performance improvement using alumina thin film

    NASA Astrophysics Data System (ADS)

    Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

    2017-10-01

    The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

  8. Atomic-scale visualization of oxide thin-film surfaces.

    PubMed

    Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

    2018-01-01

    The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

  9. Miniature hybrid microwave IC's using a novel thin-film technology

    NASA Astrophysics Data System (ADS)

    Eda, Kazuo; Miwa, Tetsuji; Taguchi, Yutaka; Uwano, Tomoki

    1990-12-01

    A novel thin-film technology for miniature hybrid microwave ICs is presented. All passive components, such as resistors and capacitors, are fully integrated on ordinary alumina ceramic substrates using the thin-film technology with very high yield. The numbers of parts and wiring processes were significantly reduced. This technology was applied to the fabrication of Ku-band solid-state power amplifiers. This thin-film technology offers the following advantages: (1) a very high yield fabrication process of thin-film capacitor having excellent electrical characteristics in the gigahertz range (Q = 230 at 12 GHz) and reliability: (2) two kinds of thin-film resistors having different temperature coefficients of resistivity and a lift-off process to integrate them with thin-film capacitors; and (3) a matching method using the thin-film capacitor.

  10. Transferable and flexible thin film devices for engineering applications

    NASA Astrophysics Data System (ADS)

    Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

    2014-05-01

    Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

  11. Intrinsic radiation tolerance of ultra-thin GaAs solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hirst, L. C.; Yakes, M. K.; Warner, J. H.

    2016-07-18

    Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

  12. Electrostatic thin film chemical and biological sensor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includesmore » providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.« less

  13. PREFACE: Innovations in Thin Film Processing and Characterisation

    NASA Astrophysics Data System (ADS)

    Henrion, Gérard; Belmahi, Mohammed; Andrieu, Stéphane

    2010-07-01

    This special issue contains selected papers which were presented as invited or contributed communications at the 4th International Conference on Innovation in Thin Film Processing and Characterization (ITFPC'09) which was held on 17-20 November, 2009 in Nancy (France) Jointly organized by the French Vacuum Society and the Institut Jean Lamour-a joint research unit specialized in materials, metallurgy, nano-sciences, plasmas and surfaces-the ITFPC conferences aim at providing an open forum to discuss the progress and latest developments in thin film processing and engineering. Invited lectures aim particularly at providing overviews on scientific topics while contributed communications focus on particular cutting-edge aspects of thin film science and technology, including CVD, PVD and ion beam assisted processes. The 2009 conference was organized along the 6 main following topics: Thin films processing and surface engineering Numerical simulation and thin film characterization Protective applications of thin films Energy, environment and health applications of thin films Micro- and nano-patterning of thin films New properties and applications resulting from patterned thin films which were completed by a special half day session devoted to industry-supported innovation. 180 scientists from 20 worldwide countries attended the different sessions along with the 9 invited lectures and 130 contributions were given. Besides the outstanding scientific program, a half-day tutorial session preceded the conference. During the short courses, emphasis was laid on: Lithography for thin film patterning Mechanical properties of thin films Principles and applications of reactive sputtering processes. The French Vacuum Society granted financial aid to PhD students who applied for it in order to encourage the participation of young scientists. The 19 papers published in this volume were accepted for publication after peerreviewal as for regular papers. As chairmen of this conference

  14. Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp; Yamaguchi, Akihiro; Sakuda, Atsushi

    2014-05-01

    Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueousmore » solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.« less

  15. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  16. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  17. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  18. High density nonmagnetic cobalt in thin films

    NASA Astrophysics Data System (ADS)

    Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

    2018-05-01

    Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

  19. Nanosphere lithography applied to magnetic thin films

    NASA Astrophysics Data System (ADS)

    Gleason, Russell

    Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

  20. Fabrication and etching processes of silicon-based PZT thin films

    NASA Astrophysics Data System (ADS)

    Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

    2001-09-01

    Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

  1. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  2. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  3. Oxide-based thin film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

    2018-01-01

    The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

  4. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    NASA Astrophysics Data System (ADS)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  5. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

  6. Diamond Thin-Film Thermionic Generator

    NASA Astrophysics Data System (ADS)

    Clewell, J. M.; Ordonez, C. A.; Perez, J. M.

    1997-03-01

    Since the eighteen-hundreds scientists have sought to develop the highest thermal efficiency in heat engines such as thermionic generators. Modern research in the emerging diamond film industry has indicated the work functions of diamond thin-films can be much less than one electron volt, compelling fresh investigation into their capacity as thermionic generators and inviting new methodology for determining that efficiency. Our objective is to predict the efficiency of a low-work-function, degenerate semiconductor (diamond film) thermionic generator operated as a heat engine between two constant-temperature thermal reservoirs. Our presentation will focus on a theoretical model which predicts the efficiency of the system by employing a Monte Carlo computational technique from which we report results for the thermal efficiency and the thermionic current densities of diamond thin-films.

  7. Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

    NASA Astrophysics Data System (ADS)

    Chaudhari, J. J.; Joshi, U. S.

    2018-05-01

    In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

  8. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO 3-buffered ferroelectric BaTiO 3 film on GaAs

    DOE PAGES

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; ...

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO 3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO 3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy andmore » first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO 3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO 3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

  9. All-Ceramic Thin Film Battery

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    BOYLE, TIMOTHY J.; INGERSOLL, DAVID; CYGAN, RANDALL T.

    2002-11-01

    We have undertaken the synthesis of a thin film ''All Ceramic Battery'' (ACB) using solution route processes. Based on the literature and experimental results, we selected SnO{sub 2}, LiCoO{sub 2}, and LiLaTiO{sub 3} (LLT) as the anode, cathode, and electrolyte, respectively. Strain induced by lattice mismatch between the cathode and bottom electrode, as estimated by computational calculations, indicate that thin film orientations for batteries when thicknesses are as low as 500 {angstrom} are strongly controlled by surface energies. Therefore, we chose platinized silicon as the basal platform based on our previous experience with this material. The anode thin films weremore » generated by standard spin-cast methods and processing using a solution of [Sn(ONep)]{sub 8} and HOAc which was found to form Sn{sub 6}(O){sub 4}(ONep){sub 4}. Electrochemical evaluation showed that the SnO{sub 2} was converted to Sn{sup o} during the first cycle. The cathode was also prepared by spin coating using the novel [Li(ONep)]{sub 8} and Co(OAc){sub 2}. The films could be electrochemically cycled (i.e., charged/discharged), with all of the associated structural changes being observable by XRD. Computational models indicated that the LLT electrolyte would be the best available ceramic material for use as the electrolyte. The LLT was synthesized from [Li(ONep)]{sub 8}, [Ti(ONep){sub 4}]{sub 2}, and La(DIP){sub 3}(py){sub 3} with RTP processing at 900 C being necessary to form the perovskite phase. Alternatively, a novel route to thin films of the block co-polymer ORMOLYTE was developed. The integration of these components was undertaken with each part of the assembly being identifiably by XRD analysis (this will allow us to follow the progress of the charge/discharge cycles of the battery during use). SEM investigations revealed the films were continuous with minimal mixing. All initial testing of the thin-film cathode/electrolyte/anode ACB devices revealed electrical shorting

  10. Tailoring Thin Film-Lacquer Coatings for Space Application

    NASA Technical Reports Server (NTRS)

    Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

    1998-01-01

    Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

  11. Tailoring Thin Film-Lacquer Coatings for Space Applications

    NASA Technical Reports Server (NTRS)

    Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

    1998-01-01

    Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's then-nal control requirements, there is often a need for a variation of solar absorptance (alpha(sub s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of alpha(sub s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

  12. Glass transition dynamics of stacked thin polymer films

    NASA Astrophysics Data System (ADS)

    Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

    2011-10-01

    The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

  13. Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films

    NASA Astrophysics Data System (ADS)

    Aryanto, D.; Hastuti, E.; Husniya, N.; Sudiro, T.; Nuryadin, B. W.

    2018-03-01

    Nanocrystalline Ni-doped ZnO (NZO) thin films were synthesized on glass substrate using sol-gel spin coating methods. The effect of annealing on the structural and optical properties of nanocrystalline thin film was studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), UV-VIS spectrophotometry, and photoluminescence (PL). The results showed that the annealing temperature strongly influenced the physical properties of nanocrystalline NZO thin films. The photocatalytic properties of nanocrystalline NZO thin films were evaluated using an aqueous solution of Rhodamine-B. The photocatalytic activity of nanocrystalline NZO thin films increased with the increase of annealing temperature. The results indicated that the structure, morphology, and band gap energy of nanocrystalline NZO thin films played an important role in photocatalytic activity.

  14. Electrolyte and Electrode Passivation for Thin Film Batteries

    NASA Technical Reports Server (NTRS)

    West, W.; Whitacre, J.; Ratnakumar, B.; Brandon, E.; Blosiu, J.; Surampudi, S.

    2000-01-01

    Passivation films for thin film batteries have been prepared and the conductivity and voltage stability window have been measured. Thin films of Li2CO3 have a large voltage stability window of 4.8V, which facilitates the use of this film as a passivation at both the lithium anode-electrolyte interface at high cathodic potentials.

  15. Simulated Thin-Film Growth and Imaging

    NASA Astrophysics Data System (ADS)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  16. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  17. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  18. Thin film resonator technology.

    PubMed

    Lakin, Kenneth M

    2005-05-01

    Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

  19. Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de

    2016-07-18

    We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and opticallymore » injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.« less

  20. A generalized theory of thin film growth

    NASA Astrophysics Data System (ADS)

    Du, Feng; Huang, Hanchen

    2018-03-01

    This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

  1. Atomic-scale epitaxial aluminum film on GaAs substrate

    NASA Astrophysics Data System (ADS)

    Fan, Yen-Ting; Lo, Ming-Cheng; Wu, Chu-Chun; Chen, Peng-Yu; Wu, Jenq-Shinn; Liang, Chi-Te; Lin, Sheng-Di

    2017-07-01

    Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  2. Thin-Film Photovoltaics: Status and Applications to Space Power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  3. Electron Damage Effects on Carbon Nanotube Thin Films

    DTIC Science & Technology

    2013-03-01

    ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS THESIS Jeremy S. Best, Captain, USMC AFIT-ENP-13-M-37 DEPARTMENT OF THE AIR FORCE AIR...Government and is not subject to copyright protection in the United States. AFIT-ENP-13-M-37 ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS...M-37 ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS Jeremy S. Best, BS Aerospace Engineering Captain, USMC Approved: Dr. John McClory

  4. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  5. The chemical deposition of semiconductor thin-films for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Breen, Marc Louis

    Initially, possible precursors to metal sulfide films formed by metal-organic chemical vapor deposition (MOCVD), the standard commercial technique for manufacturing photovoltaic semiconductors, were synthesized. Triple-junction GaInP 2/GaAs/Ge solar cells, prepared by this method, were studied to understand how chemical properties and material defects can effect the performance of photovoltaic devices. Finally, novel methods for the low-temperature, solution growth of CdS, CdSe, and CuInSe2 photovoltaic materials were targeted which will reduce manufacturing costs and increase the economic feasibility of solar energy conversion. A series of dialkyldithiocarbamate copper, gallium and indium compounds were studied as possible metal sulfide MOCVD precursors. Metal powders were oxidized by dialkylthiurams in 3- or 4-methylpyridine using standard techniques for handling air and moisture-sensitive compounds. Metal chlorides reacted directly with the sodium dialkyldithiocarbamate salts. In these complexes, the metal was found in a roughly octahedral orientation, surrounded by dithiocarbamate ligands and/or solvent molecules. Triple-junction GaInP2/GaAs/Ge cells were composed of thin-films of GaInP2 and GaAs grown monolithically on top of a germanium substrate. Each layer of semiconductor material had a different bandgap and absorbed a different portion of the solar spectrum, thus improving the overall efficiency of the cell. Work focused on dark current-voltage behavior which is known to limit solar cell open-circuit voltage, fill factor, and conversion efficiency. Cells were studied using microscopic and spectroscopic techniques to correlate the effect of physical defects in the materials with poor performance of the devices as evaluated through current vs. voltage measurements. Films of US and CdSe were readily prepared in solution through an "ion-by-ion" deposition of Cd2+ and S2- (or Se 2-) generated from the slow hydrolysis of thiourea (or dimethylthiourea). The bath

  6. Novel photon management for thin-film photovoltaics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Menon, Rajesh

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  7. Germanium Lift-Off Masks for Thin Metal Film Patterning

    NASA Technical Reports Server (NTRS)

    Brown, Ari

    2012-01-01

    A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

  8. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  9. Synthesis and characterization of nanostructured bismuth selenide thin films.

    PubMed

    Sun, Zhengliang; Liufu, Shengcong; Chen, Lidong

    2010-12-07

    Nanostructured bismuth selenide thin films have been successfully fabricated on a silicon substrate at low temperature by rational design of the precursor solution. Bi(2)Se(3) thin films were constructed of coalesced lamella in the thickness of 50-80 nm. The nucleation and growth process of Bi(2)Se(3) thin films, as well as the influence of solution chemistry on the film structure were investigated in detail. As one of the most promising thermoelectric materials, the thermoelectric properties of the prepared Bi(2)Se(3) thin films were also investigated. The power factor increased with increasing carrier mobility, coming from the enlarged crystallites and enhanced coalesced structure, and reached 1 μW cm(-1) K(-1).

  10. Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

    DOEpatents

    Duchane, D.V.; Barthell, B.L.

    1982-04-26

    A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

  11. Composite polymeric film and method for its use in installing a very thin polymeric film in a device

    DOEpatents

    Duchane, David V.; Barthell, Barry L.

    1984-01-01

    A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

  12. Pulsed photonic fabrication of nanostructured metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

    2017-09-01

    Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

  13. Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

    NASA Astrophysics Data System (ADS)

    Yang, Bohm-Jung; Nagaosa, Naoto

    2014-06-01

    Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

  14. Drop impact on thin liquid films using TIRM

    NASA Astrophysics Data System (ADS)

    Pack, Min; Ying Sun Team

    2015-11-01

    Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

  15. Thin-Film Thermocouple Technology Demonstrated for Reliable Heat Transfer Measurements

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Exploratory work is in progress to apply thin-film thermocouples to localized heat transfer measurements on turbine engine vanes and blades. The emerging thin-film thermocouple technology shows great potential to improve the accuracy of local heat transfer measurements. To verify and master the experimental methodology of thin-film thermocouples, the NASA Lewis Research Center conducted a proof-of-concept experiment in a controlled environment before applying the thin-film sensors to turbine tests.

  16. Optoelectronic simulation of GaAs solar cells with angularly selective filters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert

    We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100 nm GaAs cell, including Auger recombination.

  17. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    NASA Astrophysics Data System (ADS)

    Oulachgar, El Hassane

    . This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

  18. Thermoelectric effects of amorphous Ga-Sn-O thin film

    NASA Astrophysics Data System (ADS)

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  19. AZO nanorods thin films by sputtering method

    NASA Astrophysics Data System (ADS)

    Rosli, A. B.; Shariffudin, S. S.; Awang, Z.; Herman, S. H.

    2018-05-01

    Al-doped zinc oxide (AZO) nanorods thin film were deposited on Au catalyst using RF sputtering at 300 °C. The 15 nm thickness Au catalyst were deposited on glass substrates by sputtering method followed by annealing for 15 min at 500 °C to form Au nanostructures on the glass substrate. The AZO thin films were then deposited on Au catalyst at different RF power ranging from 50 - 200 W. The morphology of AZO was characterized using Field Emission Scanning Electron Microscopy while X-ray Diffraction was used to examine crystallinity of AZO thin films. From this work, the AZO nanorods was found grow at 200 W RF power.

  20. Drop impact onto a thin film: Miscibility effect

    NASA Astrophysics Data System (ADS)

    Chen, Ningli; Chen, H.; Amirfazli, A.

    2017-09-01

    In this work a systematic experimental study was performed to understand the process of liquid drop impact onto a thin film made of a different liquid from drop. The drop and film liquids can be miscible or immiscible. Three general outcomes of deposition, crown formation without splashing, and splashing, were observed in the advancing phase of the drop impact onto a solid surface covered by either a miscible or an immiscible thin film. However, for a miscible film, a larger Weber number and film thickness are needed for the formation of a crown and splashing comparing with immiscible cases. The advancing phase of drop impact onto a thin immiscible film with a large viscosity is similar to that of drop impact onto a dry surface; for a miscible film viscous film, the behavior is far from that of a dry surface. The behavior of liquid lamella in the receding phase of drop impact onto a thin miscible film is reported for the first time. The results show that immiscibility is not a necessary condition for the existence of a receding phase. The existence of a receding phase is highly dependent on the interfacial tension between the drop and the film. The miscibility can significantly affect the receding morphology as it will cause mixing of the two liquids.

  1. Ferroelectric thin-film active sensors for structural health monitoring

    NASA Astrophysics Data System (ADS)

    Lin, Bin; Giurgiutiu, Victor; Yuan, Zheng; Liu, Jian; Chen, Chonglin; Jiang, Jiechao; Bhalla, Amar S.; Guo, Ruyan

    2007-04-01

    Piezoelectric wafer active sensors (PWAS) have been proven a valuable tool in structural health monitoring. Piezoelectric wafer active sensors are able to send and receive guided Lamb/Rayleigh waves that scan the structure and detect the presence of incipient cracks and structural damage. In-situ thin-film active sensor deposition can eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch. Ferroelectric thin films have been shown to have piezoelectric properties that are close to those of single-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium, etc.) has not been yet attempted. In this work, in-situ fabrication method of piezoelectric thin-film active sensors arrays was developed using the nano technology approach. Specification for the piezoelectric thin-film active sensors arrays was based on electro-mechanical-acoustical model. Ferroelectric BaTiO3 (BTO) thin films were successfully deposited on Ni tapes by pulsed laser deposition under the optimal synthesis conditions. Microstructural studies by X-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO thin films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. The research objective is to develop the fabrication and optimum design of thin-film active sensor arrays for structural health monitoring applications. The short wavelengths of the micro phased arrays will permit the phased-array imaging of smaller parts and smaller damage than is currently not possible with existing technology.

  2. Evidence for a shear horizontal resonance in supported thin films

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Manghnani, M. H.; Every, A. G.

    2000-07-01

    We report evidence for a different type of acoustic film excitation, identified as a shear horizontal resonance, in amorphous silicon oxynitride films on GaAs substrate. Observation of this excitation has been carried out using surface Brillouin scattering of light. A Green's function formalism is used for analyzing the experimental spectra, and successfully simulates the spectral features associated with this mode. The attributes of this mode are described; these include its phase velocity which is nearly equal to that of a bulk shear wave propagating parallel to the surface and is almost independent of film thickness and scattering angle, its localization mainly in the film, and its polarization in the shear horizontal direction.

  3. Ferroelastic switching in a layered-perovskite thin film

    PubMed Central

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu-Feng; Van Tendeloo, Gustaaf; Chen, Long-Qing; Nan, Ce-Wen; Ramesh, Ramamoorthy; Zhang, Jinxing

    2016-01-01

    A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications. PMID:26838483

  4. Ferroelastic switching in a layered-perovskite thin film

    DOE PAGES

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; ...

    2016-02-03

    Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barriermore » of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

  5. Effect of solution concentration on MEH-PPV thin films

    NASA Astrophysics Data System (ADS)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  6. Disconnecting structure and dynamics in glassy thin films

    PubMed Central

    Sussman, Daniel M.; Cubuk, Ekin D.; Liu, Andrea J.

    2017-01-01

    Nanometrically thin glassy films depart strikingly from the behavior of their bulk counterparts. We investigate whether the dynamical differences between a bulk and thin film polymeric glass former can be understood by differences in local microscopic structure. Machine learning methods have shown that local structure can serve as the foundation for successful, predictive models of particle rearrangement dynamics in bulk systems. By contrast, in thin glassy films, we find that particles at the center of the film and those near the surface are structurally indistinguishable despite exhibiting very different dynamics. Next, we show that structure-independent processes, already present in bulk systems and demonstrably different from simple facilitated dynamics, are crucial for understanding glassy dynamics in thin films. Our analysis suggests a picture of glassy dynamics in which two dynamical processes coexist, with relative strengths that depend on the distance from an interface. One of these processes depends on local structure and is unchanged throughout most of the film, while the other is purely Arrhenius, does not depend on local structure, and is strongly enhanced near the free surface of a film. PMID:28928147

  7. Microstructural and mechanical characteristics of Ni–Cr thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texturemore » in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.« less

  8. Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

    PubMed

    Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

    2018-07-01

    Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

  9. Perovskite phase thin films and method of making

    DOEpatents

    Boyle, Timothy J.; Rodriguez, Mark A.

    2000-01-01

    The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

  10. Memristive Properties of Thin Film Cuprous Oxide

    DTIC Science & Technology

    2011-03-01

    Equation Chapter 1 Section 1 MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Brett C...Force Base, Ohio APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED The views expressed in this thesis are those of the...MEMRISTIVE PROPERTIES OF THIN FILM CUPROUS OXIDE THESIS Presented to the Faculty Department of Engineering Physics Graduate School of

  11. Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Qingliu; Shi, Bing; Bareño, Javier

    Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

  12. Room temperature ferroelectricity in continuous croconic acid thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

    2016-09-01

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  13. Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

    PubMed

    Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

    2018-03-05

    The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

  14. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J [Albuquerque, NM

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  15. Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

    PubMed

    Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

    2016-12-21

    To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

  16. Preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films.

    PubMed

    Chen, Zhiwen; Jiao, Zheng; Wu, Minghong; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

    2012-01-01

    Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films.

  17. Mechanical and physicochemical properties study on gellan gum thin film prepared using film casting method

    NASA Astrophysics Data System (ADS)

    Ismail, Nur Arifah; Razali, Mohd Hasmizam; Amin, Khairul Anuar Mat

    2017-09-01

    The GG thin films were prepared by film casting technique using gelzan (GG1) and kelcogel (GG2) respectively. The physical appearances of the thin films were observed and their mechanical and chemical properties were investigated. Chemical characterizations were done by Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR), UV-Vis Spectroscopy, and Scanning Electron Microscopy (SEM). Based on the ATR-FTIR result, GG1 and GG2 thin films show a broad peak in the range of 3600-3200 cm-1 assigned to -OH functional group. A broad peaks also was observed at 3000-2600 cm-1 and 1800-1600 cm-1 which are belong to -CH and C=O functional group, respectively. The UV-Vis Spectroscopy analysis shows that single absorption peak was observed at 260 nm for both films. For mechanical properties, GG1 thin film has high tensile strength (80±12), but low strain at break (2±1), on the other hand GG2 thin film has low tensile strength (3±0.08) but high strain at break (13±0.58). The Water Vapour Transmission Rates (WVTR) and swelling of GG1 and GG2 thin films were (422±113, 415±26) and (987±113, 902±63), respectively.

  18. Coupling Between Microstrip Lines With Finite Width Ground Plane Embedded in Thin Film Circuits

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Dalton, Edan; Tentzeris, Manos M.; Papapolymerou, John

    2003-01-01

    Three-dimensional (3D) interconnects built upon multiple layers of polyimide are required for constructing 3D circuits on CMOS (low resistivity) Si wafers, GaAs, and ceramic substrates. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines a r e susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements a r e used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions. Furthermore, it is shown that coupled microstrip lines establish a slotline type mode between the two ground planes and a dielectric waveguide type mode, and that the via holes recommended here eliminate these two modes.

  19. Silicon-integrated thin-film structure for electro-optic applications

    DOEpatents

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  20. Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

    NASA Astrophysics Data System (ADS)

    Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

    2018-05-01

    Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

  1. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  2. Thin-film reliability and engineering overview

    NASA Astrophysics Data System (ADS)

    Ross, R. G., Jr.

    1984-10-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  3. Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

    NASA Astrophysics Data System (ADS)

    Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

    2018-06-01

    The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

  4. Metal Induced Growth of Si Thin Films and NiSi Nanowires

    DTIC Science & Technology

    2010-02-25

    Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

  5. Vapor deposition routes to conformal polymer thin films

    PubMed Central

    Moni, Priya; Al-Obeidi, Ahmed

    2017-01-01

    Vapor phase syntheses, including parylene chemical vapor deposition (CVD) and initiated CVD, enable the deposition of conformal polymer thin films to benefit a diverse array of applications. This short review for nanotechnologists, including those new to vapor deposition methods, covers the basic theory in designing a conformal polymer film vapor deposition, sample preparation and imaging techniques to assess film conformality, and several applications that have benefited from vapor deposited, conformal polymer thin films. PMID:28487816

  6. Young's modulus measurement of aluminum thin film with cantilever structure

    NASA Astrophysics Data System (ADS)

    Lee, ByoungChan; Lee, SangHun; Lee, Hwasu; Shin, Hyungjae

    2001-09-01

    Micromachined cantilever structures are commonly used for measuring mechanical properties of thin film materials in MEMS. The application of conventional cantilever theory in experiment raises severe problem. The deformation of the supporting post and flange is produced by the applied electrostatic force and lead to more reduced measurement value than real Young's modulus of thin film materials. In order to determine Young's modulus of aluminum thin film robustly and reproducibly, the modified cantilever structure is proposed. Two measurement methods, which are cantilever tip deflection measurement and resonant frequency measurement, are used for confirming the reliability of the proposed cantilever structure as well. Measured results indicate that the proposed measurement scheme provides useful and credible Young's modulus value for thin film materials with sub-micron thickness. The proved validation of the proposed scheme makes sure that in addition to Young's modulus of aluminum thin film, that of other thin film materials which are aluminum alloy, metal, and so forth, can be extracted easily and clearly.

  7. Application of surface analytical methods in thin film analysis

    NASA Astrophysics Data System (ADS)

    Wen, Xingu

    Self-assembly and the sol-gel process are two promising methods for the preparation of novel materials and thin films. In this research, these two methods were utilized to prepare two types of thin films: self-assembled monolayers of peptides on gold and SiO2 sol-gel thin films modified with Ru(II) complexes. The properties of the resulting thin films were investigated by several analytical techniques in order to explore their potential applications in biomaterials, chemical sensors, nonlinear optics and catalysis. Among the analytical techniques employed in the study, surface analytical techniques, such as X-ray photoelectron spectroscopy (XPS) and grazing angle reflection absorption Fourier transform infrared spectroscopy (RA-FTIR), are particularly useful in providing information regarding the compositions and structures of the thin films. In the preparation of peptide thin films, monodisperse peptides were self-assembled on gold substrate via the N-terminus-coupled lipoic acid. The film compositions were investigated by XPS and agreed well with the theoretical values. XPS results also revealed that the surface coverage of the self-assembled films was significantly larger than that of the physisorbed films and that the chemisorption between the peptides and gold surface was stable in solvent. Studies by angle dependent XPS (ADXPS) and grazing angle RA-FTIR indicated that the peptides were on average oriented at a small angle from the surface normal. By using a model of orientation distribution function, both the peptide tilt angle and film thickness can be well calculated. Ru(II) complex doped SiO2 sol-gel thin films were prepared by low temperature sol-gel process. The ability of XPS coupled with Ar + ion sputtering to provide both chemical and compositional depth profile information of these sol-gel films was evaluated. This technique, together with UV-VIS and electrochemical measurements, was used to investigate the stability of Ru complexes in the composite

  8. Preliminary Measurements of Thin Film Solar Cells

    NASA Image and Video Library

    1967-06-21

    George Mazaris, works with an assistant to obtain the preliminary measurements of cadmium sulfide thin-film solar cells being tested in the Space Environmental Chamber at the National Aeronautics and Space Administration (NASA) Lewis Research Center. Lewis’ Photovoltaic Fundamentals Section was investigating thin-film alternatives to the standard rigid and fragile solar cells. The cadmium sulfide semiconductors were placed in a light, metallized substrate that could be rolled or furled during launch. The main advantage of the thin-film solar cells was their reduced weight. Lewis researchers, however, were still working on improving the performance of the semiconductor. The new thin-film solar cells were tested in a space simulation chamber in the CW-6 test cell in the Engine Research Building. The chamber created a simulated altitude of 200 miles. Sunlight was simulated by a 5000-watt xenon light. Some two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit. This photograph was taken for use in a NASA recruiting publication.

  9. Flexoelectricity in barium strontium titanate thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. Themore » measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.« less

  10. Physical Vapor Deposition of Thin Films

    NASA Astrophysics Data System (ADS)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  11. Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

    NASA Astrophysics Data System (ADS)

    Jain, N.; Zhu, Y.; Maurya, D.; Varghese, R.; Priya, S.; Hudait, M. K.

    2014-01-01

    We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO2 thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO2 thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO2/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO2 thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO2/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO2/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔEV(100) > ΔEV(111) > ΔEV(110) and a conduction band-offset relation of ΔEC(110) > ΔEC(111) > ΔEC(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO2 for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

  12. Thin-film diffusion brazing of titanium alloys

    NASA Technical Reports Server (NTRS)

    Mikus, E. B.

    1972-01-01

    A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.

  13. AC impedance analysis of polypyrrole thin films

    NASA Technical Reports Server (NTRS)

    Penner, Reginald M.; Martin, Charles R.

    1987-01-01

    The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

  14. Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

    NASA Astrophysics Data System (ADS)

    Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

    2013-03-01

    A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

  15. Magnetoresistance measurements of superconducting molybdenum nitride thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Baskaran, R., E-mail: baskaran@igcar.gov.in; Arasu, A. V. Thanikai; Amaladass, E. P.

    2016-05-23

    Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

  16. Method for making surfactant-templated, high-porosity thin films

    DOEpatents

    Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

    2001-01-01

    An evaporation-induced self-assembly method to prepare a surfactant-templated thin film by mixing a silica sol, a surfactant, and a hydrophobic polymer and then evaporating a portion of the solvent during coating onto a substrate and then heating to form a liquid-phase, thin film material with a porosity greater than approximately 50 percent. The high porosity thin films can have dielectric constants less than 2 to be suitable for applications requiring low-dielectric constants. An interstitial compound can be added to the mixture, with the interstitial compound either covalently bonded to the pores or physically entrapped within the porous structure. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

  17. Thermoelectric Properties of Al-Doped ZnO Thin Films

    NASA Astrophysics Data System (ADS)

    Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

    2014-06-01

    We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

  18. Room temperature ferroelectricity in continuous croconic acid thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structuresmore » of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.« less

  19. Thin-Film Ceramic Thermocouples Fabricated and Tested

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Gregory, Otto J.; Blaha, Charles A.

    2004-01-01

    The Sensors and Electronics Technology Branch of the NASA Glenn Research Center is developing thin-film-based sensors for surface measurement in propulsion system research. Thin-film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner than wire- or foil-based sensors. One type of sensor being advanced is the thin-film thermocouple, specifically for applications in high-temperature combustion environments. Ceramics are being demonstrated as having the potential to meet the demands of thin-film thermocouples in advanced aerospace environments. The maximum-use temperature of noble metal thin-film thermocouples, 1500 C (2700 F), may not be adequate for components used in the increasingly harsh conditions of advanced aircraft and next-generation launch vehicles. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically in the form of bulky rods or probes. As part of ASTP, Glenn's Sensors and Electronics Technology Branch is leading an in-house effort to apply ceramics as thin-film thermocouples for extremely high-temperature applications as part of ASTP. Since the purity of the ceramics is crucial for the stability of the thermocouples, Glenn's Ceramics Branch and Case Western Reserve University are developing high-purity ceramic sputtering targets for fabricating high-temperature sensors. Glenn's Microsystems Fabrication Laboratory, supported by the Akima Corporation, is using these targets to fabricate thermocouple samples for testing. The first of the materials used were chromium silicide (CrSi) and tantalum carbide (TaC). These refractory materials are expected to survive temperatures in excess of 1500 C. Preliminary results indicate that the thermoelectric voltage output of a thin-film CrSi versus TaC thermocouple is 15 times that of the standard type R (platinum-rhodium versus platinum) thermocouple, producing 20 mV with a 200

  20. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    NASA Astrophysics Data System (ADS)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  1. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

  2. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    DOE PAGES

    Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; ...

    2018-02-22

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

  3. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness.

    PubMed

    Ievlev, Anton V; Chyasnavichyus, Marius; Leonard, Donovan N; Agar, Joshua C; Velarde, Gabriel A; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro; Ovchinnikova, Olga S

    2018-04-02

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  4. Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Beringer, Douglas

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5more » GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.« less

  5. Integrated thin film cadmium sulfide solar cell module

    NASA Technical Reports Server (NTRS)

    Mickelsen, R. A.; Abbott, D. D.

    1971-01-01

    The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

  6. Properties of thin silver films with different thickness

    NASA Astrophysics Data System (ADS)

    Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

    2009-01-01

    In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

  7. Flush Mounting Of Thin-Film Sensors

    NASA Technical Reports Server (NTRS)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  8. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  9. Thin film thermocouples for high temperature measurement on ceramic materials

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond

    1992-01-01

    Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

  10. Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

    NASA Astrophysics Data System (ADS)

    Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

    2016-03-01

    W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

  11. Generation of low work function, stable compound thin films by laser ablation

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  12. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  13. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  14. Thin spray film thickness measuring technique

    NASA Technical Reports Server (NTRS)

    Jones, G.; Kurtz, G. W.

    1971-01-01

    Thin spray film application depths, in the 0.0002 cm to 0.002 cm range, are measured by portable, commercially available, light density measuring device used in conjunction with glass plate or photographic film. Method is automated by using mechanical/electrical control for shutting off film applicator at desired densitometer reading.

  15. Water-Based Peeling of Thin Hydrophobic Films

    NASA Astrophysics Data System (ADS)

    Khodaparast, Sepideh; Boulogne, François; Poulard, Christophe; Stone, Howard A.

    2017-10-01

    Inks of permanent markers and waterproof cosmetics create elastic thin films upon application on a surface. Such adhesive materials are deliberately designed to exhibit water-repellent behavior. Therefore, patterns made up of these inks become resistant to moisture and cannot be cleaned by water after drying. However, we show that sufficiently slow dipping of such elastic films, which are adhered to a substrate, into a bath of pure water allows for complete removal of the hydrophobic coatings. Upon dipping, the air-water interface in the bath forms a contact line on the substrate, which exerts a capillary-induced peeling force at the edge of the hydrophobic thin film. We highlight that this capillary peeling process is more effective at lower velocities of the air-liquid interface and lower viscosities. Capillary peeling not only removes such thin films from the substrate but also transfers them flawlessly onto the air-water interface.

  16. Unlocking the Structure and Dynamics of Thin Polymeric Films

    DTIC Science & Technology

    2016-11-13

    AFRL-AFOSR-JP-TR-2016-0092 Unlocking the Structure and Dynamics of Thin Polymeric Films Andrew Whittaker THE UNIVERSITY OF QUEENSLAND Final Report 11...Final 3. DATES COVERED (From - To)  15 Jun 2015 to 16 Jun 2016 4. TITLE AND SUBTITLE Unlocking the Structure and Dynamics of Thin Polymeric Films 5a...the interfacial structure that are inherent in thin films affects how polymers behave. A number of technically relevant polymeric systems were

  17. Thin polymeric films for building biohybrid microrobots.

    PubMed

    Ricotti, Leonardo; Fujie, Toshinori

    2017-03-06

    This paper aims to describe the disruptive potential that polymeric thin films have in the field of biohybrid devices and to review the recent efforts in this area. Thin (thickness  <  1 mm) and ultra-thin (thickness  <  1 µm) matrices possess a series of intriguing features, such as large surface area/volume ratio, high flexibility, chemical and physical surface tailorability, etc. This enables the fabrication of advanced bio/non-bio interfaces able to efficiently drive cell-material interactions, which are the key for optimizing biohybrid device performances. Thin films can thus represent suitable platforms on which living and artificial elements are coupled, with the aim of exploiting the unique features of living cells/tissues. This may allow to carry out certain tasks, not achievable with fully artificial technologies. In the paper, after a description of the desirable chemical/physical cues to be targeted and of the fabrication, functionalization and characterization procedures to be used for thin and ultra-thin films, the state-of-the-art of biohybrid microrobots based on micro/nano-membranes are described and discussed. The research efforts in this field are rather recent and they focus on: (1) self-beating cells (such as cardiomyocytes) able to induce a relatively large deformation of the underlying substrates, but affected by a limited controllability by external users; (2) skeletal muscle cells, more difficult to engineer in mature and functional contractile tissues, but featured by a higher controllability. In this context, the different materials used and the performances achieved are analyzed. Despite recent interesting advancements and signs of maturity of this research field, important scientific and technological steps are still needed. In the paper some possible future perspectives are described, mainly concerning thin film manipulation and assembly in multilayer 3D systems, new advanced materials to be used for the fabrication

  18. Thin-Film Solar Array Earth Orbit Mission Applicability Assessment

    NASA Technical Reports Server (NTRS)

    Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Raffaelle, Ryne P.

    2002-01-01

    This is a preliminary assessment of the applicability and spacecraft-level impact of using very lightweight thin-film solar arrays with relatively large deployed areas for representative Earth orbiting missions. The most and least attractive features of thin-film solar arrays are briefly discussed. A simple calculation is then presented illustrating that from a solar array alone mass perspective, larger arrays with less efficient but lighter thin-film solar cells can weigh less than smaller arrays with more efficient but heavier crystalline cells. However, a proper spacecraft-level systems assessment must take into account the additional mass associated with solar array deployed area: the propellant needed to desaturate the momentum accumulated from area-related disturbance torques and to perform aerodynamic drag makeup reboost. The results for such an assessment are presented for a representative low Earth orbit (LEO) mission, as a function of altitude and mission life, and a geostationary Earth orbit (GEO) mission. Discussion of the results includes a list of specific mission types most likely to benefit from using thin-film arrays. NASA Glenn's low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is also briefly discussed to provide a perspective on one approach to achieving this enabling technology. The paper concludes with a list of issues to be addressed prior to use of thin-film solar arrays in space and the observation that with their unique characteristics, very lightweight arrays using efficient, thin-film cells on flexible substrates may become the best array option for a subset of Earth orbiting missions.

  19. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    NASA Astrophysics Data System (ADS)

    Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

    2015-09-01

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

  20. Dynamic studies of nano-confined polymer thin films

    NASA Astrophysics Data System (ADS)

    Geng, Kun

    Polymer thin films with the film thickness (h0 ) below 100 nm often exhibit physical properties different from the bulk counterparts. In order to make the best use of polymer thin films in applications, it is important to understand the physical origins of these deviations. In this dissertation, I will investigate how different factors influence dynamic properties of polymer thin films upon nano-confinement, including glass transition temperature (Tg), effective viscosity (etaeff) and self-diffusion coefficient (D ). The first part of this dissertation concerns the impacts of the molecular weight (MW) and tacticity on the Tg's of nano-confined polymer films. Previous experiments showed that the Tg of polymer films could be depressed or increased as h0 decreases. While these observations are usually attributed to the effects of the interfaces, some experiments suggested that MW's and tacticities might also play a role. To understand the effects of these factors, the Tg's of silica-based poly(alpha-methyl styrene) (PalphaMS/SiOx) and poly(methyl methacrylate) (PMMA/SiOx) thin films were studied, and the results suggested that MW's and tacticities influence Tg in nontrivial ways. The second part concerns an effort to resolve the long-standing controversy about the correlation between different dynamics of polymer thin films upon nano-confinement. Firstly, I discuss the experimental results of Tg, D and etaeff of poly(isobutyl methacrylate) films supported by silica (PiBMA/SiOx). Both T g and D were found to be independent of h 0, but etaeff decreased with decreasing h 0. Since both D and etaeff describe transport phenomena known to depend on the local friction coefficient or equivalently the local viscosity, it is questionable why D and etaeff displayed seemingly inconsistent h 0 dependencies. We envisage the different h0 dependencies to be caused by Tg, D and etaeff being different functions of the local T g's (Tg,i) or viscosities (eta i). By assuming a three

  1. Mesoscale simulations of confined Nafion thin films.

    PubMed

    Vanya, P; Sharman, J; Elliott, J A

    2017-12-07

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  2. Mesoscale simulations of confined Nafion thin films

    NASA Astrophysics Data System (ADS)

    Vanya, P.; Sharman, J.; Elliott, J. A.

    2017-12-01

    The morphology and transport properties of thin films of the ionomer Nafion, with thicknesses on the order of the bulk cluster size, have been investigated as a model system to explain the anomalous behaviour of catalyst/electrode-polymer interfaces in membrane electrode assemblies. We have employed dissipative particle dynamics (DPD) to investigate the interaction of water and fluorocarbon chains, with carbon and quartz as confining materials, for a wide range of operational water contents and film thicknesses. We found confinement-induced clustering of water perpendicular to the thin film. Hydrophobic carbon forms a water depletion zone near the film interface, whereas hydrophilic quartz results in a zone with excess water. There are, on average, oscillating water-rich and fluorocarbon-rich regions, in agreement with experimental results from neutron reflectometry. Water diffusivity shows increasing directional anisotropy of up to 30% with decreasing film thickness, depending on the hydrophilicity of the confining material. A percolation analysis revealed significant differences in water clustering and connectivity with the confining material. These findings indicate the fundamentally different nature of ionomer thin films, compared to membranes, and suggest explanations for increased ionic resistances observed in the catalyst layer.

  3. Compositional ratio effect on the surface characteristics of CuZn thin films

    NASA Astrophysics Data System (ADS)

    Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

    2018-05-01

    CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

  4. Preparation of pentacene thin film deposited using organic material auto-feeding system for the fabrication of organic thin film transistor.

    PubMed

    Kim, Young Baek; Choi, Bum Ho; Lim, Yong Hwan; Yoo, Ha Na; Lee, Jong Ho; Kim, Jin Hyeok

    2011-02-01

    In this study, pentacene organic thin film was prepared using newly developed organic material auto-feeding system integrated with linear cell and characterized. The newly developed organic material auto-feeding system consists of 4 major parts: reservoir, micro auto-feeder, vaporizer, and linear cell. The deposition of organic thin film could be precisely controlled by adjusting feeding rate, main tube size, position and size of nozzle. 10 nm thick pentacene thin film prepared on glass substrate exhibited high uniformity of 3.46% which is higher than that of conventional evaporation method using point cell. The continuous deposition without replenishment of organic material can be performed over 144 hours with regulated deposition control. The grain size of pentacene film which affect to mobility of OTFT, was controlled as a function of the temperature.

  5. Liquid crystals for organic thin-film transistors

    NASA Astrophysics Data System (ADS)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  6. Plasma polymerized hexamethyldisiloxane thin films for corrosion protection

    NASA Astrophysics Data System (ADS)

    Saloum, S.; Alkhaled, B.; Alsadat, W.; Kakhia, M.; Shaker, S. A.

    2018-01-01

    This study focused on the corrosion protection performance of plasma polymerized HMDSO thin films in two different corrosive medias, 0.3M NaCl and 0.3M H2SO4. The pp-HMDSO thin films were deposited on steel substrates for electrochemical tests using the potentiodynamic polarization technique, they were deposited also on aluminum and silicon substrates to investigate their resistance to corrosion, through the analysis of the degradation of microhardness and morphology, respectively, after immersion of the substrates for one week in the corrosive media. The results showed promising corrosion protection properties of the pp-HMDSO thin films.

  7. In-situ ellipsometry: applications to thin film research, development, and production

    NASA Astrophysics Data System (ADS)

    Kief, M. T.

    1999-07-01

    Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of thin film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable - insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

  8. Thin film thermocouples for thermoelectric characterization of nanostructured materials

    NASA Astrophysics Data System (ADS)

    Grayson, Matthew; Zhou, Chuanle; Varrenti, Andrew; Chyung, Seung Hye; Long, Jieyi; Memik, Seda

    2011-03-01

    The increased use of nanostructured materials as thermoelectrics requires reliable and accurate characterization of the anisotropic thermal coefficients of small structures, such as superlattices and quantum wire networks. Thin evaporated metal films can be used to create thermocouples with a very small thermal mass and low thermal conductivity, in order to measure thermal gradients on nanostructures and thereby measure the thermal conductivity and the Seebeck coefficient of the nanostructure. In this work we confirm the known result that thin metal films have lower Seebeck coefficients than bulk metals, and we also calibrate the Seebeck coefficient of a thin-film Ni/Cr thermocouple with 50 nm thickness, showing it to have about 1/4 the bulk value. We demonstrate reproducibility of this thin-filmSeebeck coefficient on multiple substrates, and we show that this coefficient does, in fact, change as a function of film thickness. We will discuss prototype measurement designs and preliminary work as to how these thin films can be used to study both Seebeck coefficients and thermal conductivities of superlattices in various geometries. The same technology can in principle be used on integrated circuits for thermal mapping, under the name ``Integrated On-Chip Thermocouple Array'' (IOTA).

  9. Research progress of VO2 thin film as laser protecting material

    NASA Astrophysics Data System (ADS)

    Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

    2018-03-01

    With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

  10. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  11. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  12. Exciton-phonon coupling in diindenoperylene thin films

    NASA Astrophysics Data System (ADS)

    Heinemeyer, U.; Scholz, R.; Gisslén, L.; Alonso, M. I.; Ossó, J. O.; Garriga, M.; Hinderhofer, A.; Kytka, M.; Kowarik, S.; Gerlach, A.; Schreiber, F.

    2008-08-01

    We investigate exciton-phonon coupling and exciton transfer in diindenoperylene (DIP) thin films on oxidized Si substrates by analyzing the dielectric function determined by variable-angle spectroscopic ellipsometry. Since the molecules in the thin-film phase form crystallites that are randomly oriented azimuthally and highly oriented along the surface normal, DIP films exhibit strongly anisotropic optical properties with uniaxial symmetry. This anisotropy can be determined by multiple sample analysis. The thin-film spectrum is compared with a monomer spectrum in solution, which reveals similar vibronic subbands and a Huang-Rhys parameter of S≈0.87 for an effective internal vibration at ℏωeff=0.17eV . However, employing these parameters the observed dielectric function of the DIP films cannot be described by a pure Frenkel exciton model, and the inclusion of charge-transfer (CT) states becomes mandatory. A model Hamiltonian is parametrized with density-functional theory calculations of single DIP molecules and molecule pairs in the stacking geometry of the thin-film phase, revealing the vibronic coupling constants of DIP in its excited and charged states together with electron and hole transfer integrals along the stack. From a fit of the model calculation to the observed dielectric tensor, we find the lowest CT transition E00CT at 0.26±0.05eV above the neutral molecular excitation energy E00F , which is an important parameter for device applications.

  13. Synthesis and annealing study of RF sputtered ZnO thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

    2016-05-23

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

  14. Sol-gel preparation of silica and titania thin films

    NASA Astrophysics Data System (ADS)

    Thoř, Tomáš; Václavík, Jan

    2016-11-01

    Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

  15. Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

    NASA Astrophysics Data System (ADS)

    Yilixiati, Subinuer; Zhang, Yiran; Pearsall, Collin; Sharma, Vivek

    Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freestanding thin films. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm are visualized and analyzed using IDIOM protocols. We distinguish nanoscopic rims, mesas and craters and show that the non-flat features are sculpted by oscillatory, periodic, supramolecular structural forces that arise in confined fluids

  16. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    PubMed

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  17. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    PubMed

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  18. Phase equilibria in polymer-blend thin films

    NASA Astrophysics Data System (ADS)

    Clarke, Nigel; Souche, Mireille

    2010-03-01

    To describe equilibrium concentration profiles in thin films of polymer mixtures, we propose a Hamiltonian formulation of the Flory-Huggins-de Gennes theory describing a polymer blend thin film. We first focus on the case of 50:50 polymer blends confined between anti-symmetric walls. The different phases of the system and the transitions between them, including finite size effects, are systematically studied through their relation with the geometry of the Hamiltonian flow in phase space. This method provides an easy and efficient way, with strong graphical insight, to infer the qualitative physical behavior of polymer blend thin films. The addition of a further degree of freedom in the system, namely a solvent, may result in a chaotic behavior of the system, characterized by the existence of solutions with exponential sensitivity to initial conditions. Such solutions and there subsequent contribution to the out-of-equilibrium dynamics of the system are well described in Hamiltonian formalism. A fully consistent treatment of the Flory-Huggins-de Gennes theory of thin film polymer blend solutions, in the spirit of the Hamiltonian approach will be presented. 1. M. Souche and N. Clarke, J. Chem. Phys., submitted.

  19. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  20. Thin-film semiconductor rectifier has improved properties

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  1. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  2. Electron transporting water-gated thin film transistors

    NASA Astrophysics Data System (ADS)

    Al Naim, Abdullah; Grell, Martin

    2012-10-01

    We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

  3. The growth of low band-gap InAs on (111)B GaAs substrates

    NASA Technical Reports Server (NTRS)

    Welser, R. E.; Guido, L. J.

    1995-01-01

    The use of low band-gap materials is of interest for a number of photovoltaic and optoelectronic applications, such as bottom cells of optimized multijunction solar cell designs, long wavelength light sources, detectors, and thermophotovoltaics. However, low band-gap materials are generally mismatched with respect to lattice constant, thermal expansion coefficient, and chemical bonding to the most appropriate commercially available substrates (Si, Ge, and GaAs). For the specific case of III-V semiconductor heteroepitaxy, one must contend with the strain induced by both lattice constant mismatch at the growth temperature and differences in the rates of mechanical deformation during the cool down cycle. Several experimental techniques have been developed to minimize the impact of these phenomena (i.e., compositional grading, strained layer superlattices, and high-temperature annealing). However, in highly strained systems such as InAs-on-GaAs, three-dimensional island formation and large defect densities (greater than or equal to 10(exp 8)/ cm(exp -2)) tend to limit their applicability. In these particular cases, the surface morphology and defect density must be controlled during the initial stages of nucleation and growth. At the last SPRAT conference, we reported on a study of the evolution of InAs islands on (100) and (111)B GaAs substrates. Growth on the (111)B orientation exhibits a number of advantageous properties as compared to the (100) during these early stages of strained-layer epitaxy. In accordance with a developing model of nucleation and growth, we have deposited thin (60 A - 2500 A), fully relaxed InAs films on (111)B GaAs substrates. Although thicker InAs films are subject to the formation of twin defects common to epitaxy on the (111)B orientation, appropriate control of the growth parameters can greatly minimize their density. Using this knowledge base, InAs films up to 2 microns in thickness with improved morphology and structural quality have

  4. Suppression of copper thin film loss during graphene synthesis.

    PubMed

    Lee, Alvin L; Tao, Li; Akinwande, Deji

    2015-01-28

    Thin metal films can be used to catalyze the growth of nanomaterials in place of the bulk metal, while greatly reducing the amount of material used. A big drawback of copper thin films (0.5-1.5 μm thick) is that, under high temperature/vacuum synthesis, the mass loss of films severely reduces the process time due to discontinuities in the metal film, thereby limiting the time scale for controlling metal grain and film growth. In this work, we have developed a facile method, namely "covered growth" to extend the time copper thin films can be exposed to high temperature/vacuum environment for graphene synthesis. The key to preventing severe mass loss of copper film during the high temperature chemical vapor deposition (CVD) process is to have a cover piece on top of the growth substrate. This new "covered growth" method enables the high-temperature annealing of the copper film upward of 4 h with minimal mass loss, while increasing copper film grain and graphene domain size. Graphene was then successfully grown on the capped copper film with subsequent transfer for device fabrication. Device characterization indicated equivalent physical, chemical, and electrical properties to conventional CVD graphene. Our "covered growth" provides a convenient and effective solution to the mass loss issue of thin films that serve as catalysts for a variety of 2D material syntheses.

  5. The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

    NASA Astrophysics Data System (ADS)

    Harris Odum, Nicole Latrice

    Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

  6. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    NASA Astrophysics Data System (ADS)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  7. Magnon dispersion in thin magnetic films.

    PubMed

    Balashov, T; Buczek, P; Sandratskii, L; Ernst, A; Wulfhekel, W

    2014-10-01

    Although the dispersion of magnons has been measured in many bulk materials, few studies deal with the changes in the dispersion when the material is in the form of a thin film, a system that is of interest for applications. Here we review inelastic tunneling spectroscopy studies of magnon dispersion in Mn/Cu3Au(1 0 0) and present new studies on Co and Ni thin films on Cu(1 0 0). The dispersion in Mn and Co films closely follows the dispersion of bulk samples with negligible dependence on thickness. The lifetime of magnons depends slightly on film thickness, and decreases considerably as the magnon energy increases. In Ni/Cu(1 0 0) films the thickness dependence of dispersion is much more pronounced. The measurements indicate a considerable mode softening for thinner films. Magnon lifetimes decrease dramatically near the edge of the Brillouin zone due to a close proximity of the Stoner continuum. The experimental study is supported by first-principles calculations.

  8. Structural and morphological study of ZrO2 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

    2018-05-01

    In this paper we discuss the fabrication of transparent thin films of Zirconium Oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Further these fabricated films were characterized for different annealing temperatures and withdrawal speed. X-ray diffraction is used to study the structural properties of deposited thin films and it reveals the change in crystallographic properties with the change in annealing temperature. Thickness of thin films is estimated by using scanning electron microscope.

  9. Study of microstructure and electroluminescence of zinc sulfide thin film

    NASA Astrophysics Data System (ADS)

    Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

    1998-03-01

    The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

  10. Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel.

    PubMed

    Miao, Xin; Zhang, Chen; Li, Xiuling

    2013-06-12

    High-quality growth of planar GaAs nanowires (NWs) with widths as small as 35 nm is realized by comprehensively mapping the parameter space of group III flow, V/III ratio, and temperature as the size of the NWs scales down. Using a growth mode modulation scheme for the NW and thin film barrier layers, monolithically integrated AlGaAs barrier-all-around planar GaAs NW high electron mobility transistors (NW-HEMTs) are achieved. The peak extrinsic transconductance, drive current, and effective electron velocity are 550 μS/μm, 435 μA/μm, and ~2.9 × 10(7) cm/s, respectively, at 2 V supply voltage with a gate length of 120 nm. The excellent DC performance demonstrated here shows the potential of this bottom-up planar NW technology for low-power high-speed very-large-scale-integration (VLSI) circuits.

  11. Polycrystalline silicon thin-film transistors on quartz fiber

    NASA Astrophysics Data System (ADS)

    Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

    2007-11-01

    We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

  12. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    NASA Astrophysics Data System (ADS)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  13. Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ullal, H. S.; Zweibel, K.; von Roedern, B.

    2002-05-01

    II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% formore » a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.« less

  14. Thin Film Ceramic Strain Sensor Development for Harsh Environments: Identification of Candidate Thin Film Ceramics to Test for Viability for Static Strain Sensor Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Fralick, Gustave C.; Hunter, Gary W.

    2006-01-01

    The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in propulsion system applications. In order to have a more passive method of negating changes of resistance due to temperature, an effort is underway at NASA GRC to develop high temperature thin film ceramic static strain gauges for application in turbine engines, specifically in the fan and compressor modules on blades. Other applications include on aircraft hot section structures and on thermal protection systems. The near-term interim goal of this research effort was to identify candidate thin film ceramic sensor materials to test for viability and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. This goal was achieved by a thorough literature search for ceramics that have the potential for application as high temperature thin film strain gauges, reviewing potential candidate materials for chemical & physical compatibility with NASA GRC's microfabrication procedures and substrates.

  15. Thermal conductivity of pure silica MEL and MFI zeolite thin films

    NASA Astrophysics Data System (ADS)

    Coquil, Thomas; Lew, Christopher M.; Yan, Yushan; Pilon, Laurent

    2010-08-01

    This paper reports the room temperature cross-plane thermal conductivity of pure silica zeolite (PSZ) MEL and MFI thin films. PSZ MEL thin films were prepared by spin coating a suspension of MEL nanoparticles in 1-butanol solution onto silicon substrates followed by calcination and vapor-phase silylation with trimethylchlorosilane. The mass fraction of nanoparticles within the suspension varied from 16% to 55%. This was achieved by varying the crystallization time of the suspension. The thin films consisted of crystalline MEL nanoparticles embedded in a nonuniform and highly porous silica matrix. They featured porosity, relative crystallinity, and MEL nanoparticles size ranging from 40% to 59%, 23% to 47% and 55 nm to 80 nm, respectively. PSZ MFI thin films were made by in situ crystallization, were b-oriented, fully crystalline, and had a 33% porosity. Thermal conductivity of these PSZ thin films was measured at room temperature using the 3ω method. The cross-plane thermal conductivity of the MEL thin films remained nearly unchanged around 1.02±0.10 W m-1 K-1 despite increases in (i) relative crystallinity, (ii) MEL nanoparticle size, and (iii) yield caused by longer nanoparticle crystallization time. Indeed, the effects of these parameters on the thermal conductivity were compensated by the simultaneous increase in porosity. PSZ MFI thin films were found to have similar thermal conductivity as MEL thin films even though they had smaller porosity. Finally, the average thermal conductivity of the PSZ films was three to five times larger than that reported for amorphous sol-gel mesoporous silica thin films with similar porosity and dielectric constant.

  16. Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier

    2015-09-07

    Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa).more » For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.« less

  17. PZT Thin-Film Micro Probe Device with Dual Top Electrodes

    NASA Astrophysics Data System (ADS)

    Luo, Chuan

    Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths

  18. Soft Magnetic Multilayered Thin Films for HF Applications

    NASA Astrophysics Data System (ADS)

    Loizos, George; Giannopoulos, George; Serletis, Christos; Maity, Tuhin; Roy, Saibal; Lupu, Nicoleta; Kijima, Hanae; Yamaguchi, Masahiro; Niarchos, Dimitris

    Multilayered thin films from various soft magnetic materials were successfully prepared by magnetron sputtering in Ar atmosphere. The magnetic properties and microstructure were investigated. It is found that the films show good soft magnetic properties: magnetic coercivity of 1-10 Oe and saturation magnetization higher than 1T. The initial permeability of the films is greater than 300 and flattens up to 600 MHz. The multilayer thin film properties in combination with their easy, fast and reproducible fabrication indicate that they are potential candidates for high frequency applications.

  19. The Chemical Vapor Deposition of Thin Metal Oxide Films

    NASA Astrophysics Data System (ADS)

    Laurie, Angus Buchanan

    1990-01-01

    Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

  20. Methods for producing thin film charge selective transport layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  1. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru; Buriakov, A. M.

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity ofmore » the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.« less

  2. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov Websites

    , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because have developed a quantitative high-throughput technique that can measure many barriers in parallel with

  3. In-situ ellipsometry: applications to thin film research, development, and production

    NASA Astrophysics Data System (ADS)

    Kief, Mark T.

    1999-07-01

    Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of the film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable-- insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

  4. Pulsed laser deposition of lithium niobate thin films

    NASA Astrophysics Data System (ADS)

    Canale, L.; Girault-Di Bin, C.; Cosset, F.; Bessaudou, A.; Celerier, A.; Decossas, J.-Louis; Vareille, J.-C.

    2000-12-01

    Pulsed laser deposition of Lithium Niobate thin films onto sapphire (0001) substrates is reported. Thin films composition and structure have been determined using Rutherford Backscattermg Spectroscopy (RBS) and X-ray diffraction ( XRD) experiments. The influe:nce of deposition parameters such as substrate temperature, oxygen pressure and target to substrate distance on the composition and the structure of the films has been studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the Li deficient phase LiNb3O8. Nearly stoichiometric thin fihns have been obtained for an oxygen pressure of 0. 1 Ton and a substrate temperature of 800°C. Under optimized conditions the (001) preferential orientation of growth, suitable for most optical applications, has been obtained.

  5. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

    InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

  6. Investigation of phase transition properties of ZrO2 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

    2018-05-01

    This paper presents the synthesis of transparent thin films of zirconium oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Synthesized films were characterized for different annealing time and withdrawal speed. Change in crystallographic properties of thin films was investigated by using X-ray diffraction. Surface morphology of transparent thin films was estimated by using scanning electron microscope.

  7. Ultra-smooth glassy graphene thin films for flexible transparent circuits

    PubMed Central

    Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

    2016-01-01

    Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

  8. Development of Thin-Film Battery Powered Transdermal Medical Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bates, J.B.; Sein, T.

    1999-07-06

    Research carried out at ORNL has led to the development of solid state thin-film rechargeable lithium and lithium-ion batteries. These unique devices can be fabricated in a variety of shapes and to any required size, large or small, on virtually any type of substrate. Because they have high energies per unit of volume and mass and because they are rechargeable, thin-film lithium batteries have potentially many applications as small power supplies in consumer and special electronic products. Initially, the objective of this project was to develop thin-film battery powered products. Initially, the objective of this project was to develop thin-filmmore » battery powered transdermal electrodes for recording electrocardiograms and electroencephalograms. These ''active'' electrode would eliminate the effect of interference and improve the reliability in diagnosing heart or brain malfunctions. Work in the second phase of this project was directed at the development of thin-film battery powered implantable defibrillators.« less

  9. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    PubMed

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  10. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  11. Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

    DOEpatents

    Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

    1999-01-01

    A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

  12. Rechargeable thin film battery and method for making the same

    DOEpatents

    Goldner, Ronald B.; Liu, Te-Yang; Goldner, Mark A.; Gerouki, Alexandra; Haas, Terry E.

    2006-01-03

    A rechargeable, stackable, thin film, solid-state lithium electrochemical cell, thin film lithium battery and method for making the same is disclosed. The cell and battery provide for a variety configurations, voltage and current capacities. An innovative low temperature ion beam assisted deposition method for fabricating thin film, solid-state anodes, cathodes and electrolytes is disclosed wherein a source of energetic ions and evaporants combine to form thin film cell components having preferred crystallinity, structure and orientation. The disclosed batteries are particularly useful as power sources for portable electronic devices and electric vehicle applications where high energy density, high reversible charge capacity, high discharge current and long battery lifetimes are required.

  13. Silver nanowire-based transparent, flexible, and conductive thin film

    PubMed Central

    2011-01-01

    The fabrication of transparent, conductive, and uniform silver nanowire films using the scalable rod-coating technique is described in this study. Properties of the transparent conductive thin films are investigated, as well as the approaches to improve the performance of transparent silver nanowire electrodes. It is found that silver nanowires are oxidized during the coating process. Incubation in hydrogen chloride (HCl) vapor can eliminate oxidized surface, and consequently, reduce largely the resistivity of silver nanowire thin films. After HCl treatment, 175 Ω/sq and approximately 75% transmittance are achieved. The sheet resistivity drops remarkably with the rise of the film thickness or with the decrease of transparency. The thin film electrodes also demonstrated excellent flexible stability, showing < 2% resistance change after over 100 bending cycles. PMID:21711602

  14. Dielectric and Raman spectroscopy of TlSe thin films

    NASA Astrophysics Data System (ADS)

    Ozel, Aysen E.; Deger, Deniz; Celik, Sefa; Yakut, Sahin; Karabak, Binnur; Akyüz, Sevim; Ulutas, Kemal

    2017-12-01

    In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr‧) and dielectric loss (εr″) of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan δ) in the frequencies ranging between 10-2 Hz-107 Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the ωs law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other.

  15. Optical and structural properties of sputtered CdS films for thin film solar cell applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Donguk; Park, Young; Kim, Minha

    2015-09-15

    Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity,more » surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.« less

  16. Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Genfa Wu; Anne-Marie Valente; H. Phillips

    2004-05-01

    An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less

  17. Visualizing Nanoscopic Topography and Patterns in Freely Standing Thin Films

    NASA Astrophysics Data System (ADS)

    Sharma, Vivek; Zhang, Yiran; Yilixiati, Subinuer

    Thin liquid films containing micelles, nanoparticles, polyelectrolyte-surfactant complexes and smectic liquid crystals undergo thinning in a discontinuous, step-wise fashion. The discontinuous jumps in thickness are often characterized by quantifying changes in the intensity of reflected monochromatic light, modulated by thin film interference from a region of interest. Stratifying thin films exhibit a mosaic pattern in reflected white light microscopy, attributed to the coexistence of domains with various thicknesses, separated by steps. Using Interferometry Digital Imaging Optical Microscopy (IDIOM) protocols developed in the course of this study, we spatially resolve for the first time, the landscape of stratifying freely standing thin films. We distinguish nanoscopic rims, mesas and craters, and follow their emergence and growth. In particular, for thin films containing micelles of sodium dodecyl sulfate (SDS), these topological features involve discontinuous, thickness transitions with concentration-dependent steps of 5-25 nm. These non-flat features result from oscillatory, periodic, supramolecular structural forces that arise in confined fluids, and arise due to complex coupling of hydrodynamic and thermodynamic effects at the nanoscale.

  18. Growth and characterization of α and β-phase tungsten films on various substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Jeong-Seop; Cho, Jaehun; You, Chun-Yeol, E-mail: cyyou@inha.ac.kr

    2016-03-15

    The growth conditions of tungsten thin films were investigated using various substrates including Si, Si/SiO{sub 2}, GaAs, MgO, and Al{sub 2}O{sub 3}, and recipes were discovered for the optimal growth conditions of thick metastable β-phase tungsten films on Si, GaAs, and Al{sub 2}O{sub 3} substrates, which is an important material in spin orbit torque studies. For the Si/SiO{sub 2} substrate, the crystal phase of the tungsten films was different depending upon the tungsten film thickness, and the transport properties were found to dramatically change with the thickness owing to a change in phase from the α + β phase to the α-phase.more » It is shown that the crystal phase changes are associated with residual stress in the tungsten films and that the resistivity is closely related to the grain sizes.« less

  19. Liquid crystals for organic thin-film transistors

    PubMed Central

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

    2015-01-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V−1 s−1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics. PMID:25857435

  20. Liquid crystals for organic thin-film transistors.

    PubMed

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

    2015-04-10

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm(2) V(-1) s(-1)) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  1. Semiconducting boron carbide thin films: Structure, processing, and diode applications

    NASA Astrophysics Data System (ADS)

    Bao, Ruqiang

    The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

  2. Altering properties of cerium oxide thin films by Rh doping

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz; NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148; Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffractionmore » techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.« less

  3. Reflow dynamics of thin patterned viscous films

    NASA Astrophysics Data System (ADS)

    Leveder, T.; Landis, S.; Davoust, L.

    2008-01-01

    This letter presents a study of viscous smoothening dynamics of a nanopatterned thin film. Ultrathin film manufacturing processes appearing to be a key point of nanotechnology engineering and numerous studies have been recently led in order to exhibit driving parameters of this transient surface motion, focusing on time scale accuracy method. Based on nanomechanical analysis, this letter shows that controlled shape measurements provided much more detailed information about reflow mechanism. Control of reflow process of any complex surface shape, or measurement of material parameter as thin film viscosity, free surface energy, or even Hamaker constant are therefore possible.

  4. Thin films of a ferroelectric phenazine/chloranilic acid organic cocrystal

    NASA Astrophysics Data System (ADS)

    Thompson, Nicholas J.; Jandl, Adam C.; Spalenka, Josef W.; Evans, Paul G.

    2011-07-01

    Phenazine-chloranilic acid cocrystal thin films can be formed by vacuum evaporation of the component molecules onto cooled substrates. Fluxes of phenazine and chloranilic acid were provided from separate sublimation sources, from which the cocrystalline phase can be formed under a wide range of impingement rates of the component molecules. Substrates consisted of Au or Ni thin films on Si wafers, cooled to 100-140 K during deposition. X-ray diffraction and scanning electron microscopy show that this process yields polycrystalline thin films of the cocrystal with voids between crystalline grains. The relative intensities of X-ray reflections differ from reported intensities of polycrystalline powders, suggesting that the films have an anisotropic distribution of crystallographic orientations. The cocrystalline thin films have an effective dielectric constant of 13 at room temperature, increasing at lower temperatures and exhibiting a broad maximum near 200 K. The means to grow thin films of organic ferroelectric materials will allow the integration of new functionalities into organic electronic device structures, including capacitors and field-effect transistors.

  5. Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

    2017-05-01

    Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

  6. Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

    PubMed

    Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

    2013-05-22

    Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

  7. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

  8. Interface structure and composition of MoO3/GaAs(0 0 1)

    NASA Astrophysics Data System (ADS)

    Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

    2018-04-01

    We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

  9. Magnetoelastic sensor for characterizing properties of thin-film/coatings

    NASA Technical Reports Server (NTRS)

    Bachas, Leonidas G. (Inventor); Barrett, Gary (Inventor); Grimes, Craig A. (Inventor); Kouzoudis, Dimitris (Inventor); Schmidt, Stefan (Inventor)

    2004-01-01

    An apparatus for determining elasticity characteristics of a thin-film layer. The apparatus comprises a sensor element having a base magnetostrictive element at least one surface of which is at least partially coated with the thin-film layer. The thin-film layer may be of a variety of materials (having a synthetic and/or bio-component) in a state or form capable of being deposited, manually or otherwise, on the base element surface, such as by way of eye-dropper, melting, dripping, brushing, sputtering, spraying, etching, evaporation, dip-coating, laminating, etc. Among suitable thin-film layers for the sensor element of the invention are fluent bio-substances, thin-film deposits used in manufacturing processes, polymeric coatings, paint, an adhesive, and so on. A receiver, preferably remotely located, is used to measure a plurality of values for magneto-elastic emission intensity of the sensor element in either characterization: (a) the measure of the plurality of values is used to identify a magneto-elastic resonant frequency value for the sensor element; and (b) the measure of the plurality of successive values is done at a preselected magneto-elastic frequency.

  10. Synthesis and characterization of spin-coated ZnS thin films

    NASA Astrophysics Data System (ADS)

    Zaman, M. Burhanuz; Chandel, Tarun; Dehury, Kshetramohan; Rajaram, P.

    2018-05-01

    In this paper, we report synthesis of ZnS thin films using a sol-gel method. A unique aprotic solvent, dimethlysulphoxide (DMSO) has been used to obtain a homogeneous ZnS gel. Zinc acetate and thiourea were used as the precursor sources for Zn and S, respectively, to deposit nanocrystalline ZnS thin films. Optical, structural and morphological properties of the films were studied. Optical studies reveal high transmittance of the samples over the entire visible region. The energy band gap (Eg) for the ZnS thin films is found to be about 3.6 eV which matches with that of bulk ZnS. The interference fringes in transmissions spectrum show the high quality of synthesized samples. Strong photoluminescence peak in the UV region makes the films suitable for optoelectronic applications. X-ray diffraction studies reveal that sol-gel derived ZnS thin films are polycrystalline in nature with hexagonal structure. SEM studies confirmed that the ZnS films show smooth and uniform grains morphology having size in 20-25 nm range. The EDAX studies confirmed that the films are nearly stoichiometric.

  11. Polycrystalline Superconducting Thin Films: Texture Control and Critical Current Density

    NASA Astrophysics Data System (ADS)

    Yang, Feng

    1995-01-01

    The growth processes of polycrystalline rm YBa_2CU_3O_{7-X} (YBCO) and yttria-stabilized-zirconia (YSZ) thin films have been developed. The effectiveness of YSZ buffer layers on suppression of the reaction between YBCO thin films and metallic substrates was carefully studied. Grown on the chemically inert surfaces of YSZ buffer layers, YBCO thin films possessed good quality of c-axis alignment with the c axis parallel to the substrate normal, but without any preferred in-plane orientations. This leads to the existence of a large percentage of the high-angle grain boundaries in the YBCO films. The critical current densities (rm J_{c}'s) found in these films were much lower than those in single crystal YBCO thin films, which was the consequence of the weak -link effect of the high-angle grain boundaries in these films. It became clear that the in-plane alignment is vital for achieving high rm J_{c }s in polycrystalline YBCO thin films. To induce the in-plane alignment, ion beam-assisted deposition (IBAD) technique was integrated into the conventional pulsed laser deposition process for the growth of the YSZ buffer layers. It was demonstrated that using IBAD the in-plane orientations of the YSZ grains could be controlled within a certain range of a common direction. This ion -bombardment induced in-plane texturing was explained using the anisotropic sputtering yield theory. Our observations and analyses have provided valuable information on the optimization of the IBAD process, and shed light on the texturing mechanism in YSZ. With the in-plane aligned YSZ buffer layers, YBCO thin films grown on metallic substrates showed improved rm J_{c}s. It was found that the in-plane alignment of YSZ and that of YBCO were closely related. A direct correlation was revealed between the rm J_{c} value and the degree of the in-plane alignment for the YBCO thin films. To explain this correlation, a numerical model was applied to multi-grain superconducting paths with different

  12. Unidirectional oxide hetero-interface thin-film diode

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

  13. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  14. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, S.P.; Chamberlin, R.

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  15. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  16. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, S.P.; Chamberlin, R.

    1999-02-09

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

  17. Thin film photovoltaic device and process of manufacture

    DOEpatents

    Albright, Scot P.; Chamberlin, Rhodes

    1997-10-07

    Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

  18. Tools to Synthesize the Learning of Thin Films

    ERIC Educational Resources Information Center

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  19. Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Chen, Feng

    Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

  20. Flexible magnetic thin films and devices

    NASA Astrophysics Data System (ADS)

    Sheng, Ping; Wang, Baomin; Li, Runwei

    2018-01-01

    Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

  1. New Thin-Film Solar Cells Compared to Normal Solar Cells

    NASA Image and Video Library

    1966-06-21

    Adolph Spakowski, head of the Photovoltaic Fundamentals Section at the National Aeronautics and Space Administration (NASA) Lewis Research Center, illustrated the difference between conventional silicon solar cells (rear panel) and the new thin-film cells. The larger, flexible thin-film cells in the foreground were evaluated by Lewis energy conversion specialists for possible future space use. The conventional solar cells used on most spacecraft at the time were both delicate and heavy. For example, the Mariner IV spacecraft required 28,000 these solar cells for its flyby of Mars in 1964. NASA Lewis began investigating cadmium sulfide thin-film solar cells in 1961. The thin-film cells were made by heating semiconductor material until it evaporated. The vapor was then condensed onto an electricity-producing film only one-thousandth of an inch thick. The physical flexibility of the new thin-film cells allowed them to be furled, or rolled up, during launch. Spakowski led an 18-month test program at Lewis to investigate the application of cadmium sulfide semiconductors on a light metallized substrate. The new thin-film solar cells were tested in a space simulation chamber at a simulated altitude of 200 miles. Sunlight was recreated by a 5000-watt xenon light. Two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit.

  2. New organic semiconductor thin film derived from p-toluidine monomer

    NASA Astrophysics Data System (ADS)

    Al-Hossainy, A. F.; Zoromba, M. Sh

    2018-03-01

    p-Toluidine was used as a precursor to synthesize new organic compound [(E)-4-methyl-N1-((E)-4-methyl-6-(p-tolylimino) cyclohex-3-en-1-ylidene)-N2-(p-tolyl) benzene-1,2-diamine] (MBD) by oxidative reaction via potassium dichromate as oxidizing agent at room temperature. Spin coater was used to fabricate nano-size crystalline thin film of the MBD with thickness 73 nm. The characterizations of the MBD powder and thin film have been described by various techniques including Fourier Transform Infrared (FT-IR), Mass Spectra, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV-Visible measurements and Atomic Force Microscope (AFM). The results revealed that the MBD as an organic material is semi-crystalline containing benzenoid (Bensbnd Nsbnd Ben) and quinonoid (Quin = N = Quin) structures. Various optical constants such as refractive index (n), and the absorption index, (k) of the MBD thin film were determined. The effect of temperature on the electrical resistivity of MBD film was studied by a Keithley 6517B electrometer. The energy band gap value of the MBD thin film was found to be 2.24 eV. Thus, MBD is located in the semiconductor materials range. In addition, structural and optical mechanisms of MBD nanostructured thin film were investigated. The obtained results illustrate the possibility of controlling the organic semiconductor MBD thin film for the optoelectronic applications.

  3. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    DOE R&D Accomplishments Database

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  4. Thin-film rechargeable lithium batteries for implantable devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bates, J.b.; Dudney, N.J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make themmore » attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.« less

  5. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  6. Nanocrystalline silicon thin films and grating structures for solar cells

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Sudhakar, Selvakumar; Khonina, Svetlana N.; Skidanov, Roman V.; Porfirevb, Alexey P.; Moissev, Oleg Y.; Kazanskiy, Nikolay L.; Kumar, Sushil

    2016-03-01

    Enhancement of optical absorption for achieving high efficiencies in thin film silicon solar cells is a challenge task. Herein, we present the use of grating structure for the enhancement of optical absorption. We have made grating structures and same can be integrated in hydrogenated micro/nanocrystalline silicon (μc/nc-Si: H) thin films based p-i-n solar cells. μc/nc-Si: H thin films were grown using plasma enhanced chemical vapor deposition method. Grating structures integrated with μc/nc-Si: H thin film solar cells may enhance the optical path length and reduce the reflection losses and its characteristics can be probed by spectroscopic and microscopic technique with control design and experiment.

  7. Thin-film thickness measurement method based on the reflection interference spectrum

    NASA Astrophysics Data System (ADS)

    Jiang, Li Na; Feng, Gao; Shu, Zhang

    2012-09-01

    A method is introduced to measure the thin-film thickness, refractive index and other optical constants. When a beam of white light shines on the surface of the sample film, the reflected lights of the upper and the lower surface of the thin-film will interfere with each other and reflectivity of the film will fluctuate with light wavelength. The reflection interference spectrum is analyzed with software according to the database, while the thickness and refractive index of the thin-film is measured.

  8. MEMS-based thin-film fuel cells

    DOEpatents

    Jankowksi, Alan F.; Morse, Jeffrey D.

    2003-10-28

    A micro-electro-mechanical systems (MEMS) based thin-film fuel cells for electrical power applications. The MEMS-based fuel cell may be of a solid oxide type (SOFC), a solid polymer type (SPFC), or a proton exchange membrane type (PEMFC), and each fuel cell basically consists of an anode and a cathode separated by an electrolyte layer. Additionally catalyst layers can also separate the electrodes (cathode and anode) from the electrolyte. Gas manifolds are utilized to transport the fuel and oxidant to each cell and provide a path for exhaust gases. The electrical current generated from each cell is drawn away with an interconnect and support structure integrated with the gas manifold. The fuel cells utilize integrated resistive heaters for efficient heating of the materials. By combining MEMS technology with thin-film deposition technology, thin-film fuel cells having microflow channels and full-integrated circuitry can be produced that will lower the operating temperature an will yield an order of magnitude greater power density than the currently known fuel cells.

  9. Confinement effects on thin polymer films

    NASA Astrophysics Data System (ADS)

    Dalnoki-Veress, Karoly J. T.

    We present the results of four projects investigating the effects of confinement on polymeric systems. The first study dealt with polymer blends that are quenched using a spincoating technique rather than a temperature quench. The mass fraction of two blends was varied to determine the effect of the substrate-blend interface on the thin film phase separation morphology. Quantitative measurements of the morphology on three different substrates revealed significant differences in the phase separation morphology as a result of the different wetting properties of the polymer blend on the substrates. The second project dealt with the effect of mechanical confinement on the phase separation of polymer blend thin films. We measured the phase separation morphology of polystyrene/poly (methyl methacrylate) (PS/PMMA) blend films of thickness h on a silicon oxide (SiOx) substrate with a SiOx capping layer. A novel phase separation morphology was observed for small capping layer thicknesses L as well as a transition from lateral to lamellar morphology as L is increased. A simple model is presented which explains the observed lateral morphology, and the morphology transition, in terms of a balance between the free energy increase associated with forming the interfaces between PS-rich and PMMA-rich domains, and the free energy increase associated with the elastic bending of the SiOx capping layer. Direct control of the amplitude and period of the deformation is achieved by varying h and L. Reasonable agreement is obtained between the predicted amplitude of the rippling of the film surface and that measured directly using atomic force microscopy. For temperatures greater than the glass transition temperature Tg, thin freely-standing polymer films are unstable to the formation of holes. In the third project, we have studied the formation and growth of two types of holes: those which form spontaneously when the films are heated above Tg, and those purposely nucleated using a heated

  10. High-field magnets using high-critical-temperature superconducting thin films

    DOEpatents

    Mitlitsky, F.; Hoard, R.W.

    1994-05-10

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

  11. High-field magnets using high-critical-temperature superconducting thin films

    DOEpatents

    Mitlitsky, Fred; Hoard, Ronald W.

    1994-01-01

    High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

  12. Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

    PubMed Central

    2014-01-01

    We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

  13. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  14. Desertification of the peritoneum by thin-film evaporation during laparoscopy.

    PubMed

    Ott, Douglas E

    2003-01-01

    To assess the effects of gas flow during insufflation on peritoneal fluid and peritoneal tissue regarding transient thermal behavior and thin-film evaporation. The effects of laparoscopic gas on peritoneal cell desiccation and peritoneal fluid thin-film evaporation were analyzed. Measurment of tissue and peritoneal fluid and analysis of gas flow dynamics during laparoscopy. High-velocity gas interface conditions during laparoscopic gas insufflation result in peritoneal surface temperature and decreases up to 20 degrees C/second due to rapid thin-film evaporation of the peritoneal fluid. Evaporation of the thin film of peritoneal fluid extends quickly to the peritoneal cell membrane, causing peritoneal cell desiccation, internal cytoplasmic stress, and disruption of the cell membrane, resulting in loss of peritoneal surface continuity and integrity. Changing the gas conditions to 35 degrees C and 95% humidity maintains normal peritoneal fluid thin-film characteristics, cellular integrity, and prevents evaporative losses. Cold, dry gas and the characteristics of the laparoscopic gas delivery apparatus cause local peritoneal damaging alterations by high-velocity gas flow with extremely dry gas, creating extreme arid surface conditions, rapid evaporative and hydrological changes, tissue desiccation, and peritoneal fluid alterations that contribute to the process of desertification and thin-film evaporation. Peritoneal desertification is preventable by preconditioning the gas to 35 degrees C and 95% humidity.

  15. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

    PubMed

    Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

    2015-03-04

    A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

  16. GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications.

    PubMed

    Park, Suk In; Trojak, Oliver Joe; Lee, Eunhye; Song, Jin Dong; Kyhm, Jihoon; Han, Ilki; Kim, Jongsu; Yi, Gyu-Chul; Sapienza, Luca

    2018-05-18

    We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

  17. GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

    NASA Astrophysics Data System (ADS)

    In Park, Suk; Trojak, Oliver Joe; Lee, Eunhye; Song, Jin Dong; Kyhm, Jihoon; Han, Ilki; Kim, Jongsu; Yi, Gyu-Chul; Sapienza, Luca

    2018-05-01

    We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.

  18. Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

    PubMed

    Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

    2009-01-01

    This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

  19. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  20. Sensing of volatile organic compounds by copper phthalocyanine thin films

    NASA Astrophysics Data System (ADS)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  1. Computational Study of In-Plane Phonon Transport in Si Thin Films

    PubMed Central

    Wang, Xinjiang; Huang, Baoling

    2014-01-01

    We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

  2. Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

    2018-06-01

    The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

  3. Thin Film Sensors for Surface Measurements

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Wrbanek, John D.; Fralick, Gustave C.

    2001-01-01

    Advanced thin film sensors that can provide accurate surface temperature, strain, and heat flux measurements have been developed at NASA Glenn Research Center. These sensors provide minimally intrusive characterization of advanced propulsion materials and components in hostile, high-temperature environments as well as validation of propulsion system design codes. The sensors are designed for applications on different material systems and engine components for testing in engine simulation facilities. Thin film thermocouples and strain gauges for the measurement of surface temperature and strain have been demonstrated on metals, ceramics and advanced ceramic-based composites of various component configurations. Test environments have included both air-breathing and space propulsion-based engine and burner rig environments at surface temperatures up to 1100 C and under high gas flow and pressure conditions. The technologies developed for these sensors as well as for a thin film heat flux gauge have been integrated into a single multifunctional gauge for the simultaneous real-time measurement of surface temperature, strain, and heat flux. This is the first step toward the development of smart sensors with integrated signal conditioning and high temperature electronics that would have the capability to provide feedback to the operating system in real-time. A description of the fabrication process for the thin film sensors and multifunctional gauge will be provided. In addition, the material systems on which the sensors have been demonstrated, the test facilities and the results of the tests to-date will be described. Finally, the results will be provided of the current effort to demonstrate the capabilities of the multifunctional gauge.

  4. Electrochemical and physical properties of electroplated CuO thin films.

    PubMed

    Dhanasekaran, V; Mahalingam, T

    2013-01-01

    Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

  5. Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.

    2016-12-01

    Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

  6. Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

    DOEpatents

    Hawkins, G.A.; Clarke, J.

    1975-10-31

    A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

  7. Magnetic hysteresis measurements of thin films under isotropic stress.

    NASA Astrophysics Data System (ADS)

    Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

    2000-10-01

    Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

  8. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE PAGES

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

  9. Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1

    DTIC Science & Technology

    2011-04-30

    IGZO film on the performance of thin film transistors 5 Chapter 2. Hydrogenation of a- IGZO channel layer in the thin film transistors 12...effect of substrate temperature during the deposition of a- IGZO film on the performance of thin film transistors Introduction The effect of substrate...temperature during depositing IGZO channel layer on the performance of amorphous indium-gallium-zinc oxide (a- IGZO

  10. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  11. A General Strategy for Hybrid Thin Film Fabrication and Transfer onto Arbitrary Substrates

    PubMed Central

    Zhang, Yong; Magan, John J.; Blau, Werner J.

    2014-01-01

    The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 104 S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices. PMID:24769689

  12. A general strategy for hybrid thin film fabrication and transfer onto arbitrary substrates.

    PubMed

    Zhang, Yong; Magan, John J; Blau, Werner J

    2014-04-28

    The development of thin film-based structures/devices often requires thin films to be transferred onto arbitrary substrates/surfaces. Controllable and non-destructive transfer method, although highly desired, remains quite challenging. Here we report a general method for fabrication and transfer of hybrid (ultra)thin films. The proposed solution-based in-situ transfer method shows not only its robust ability for thin film transfer onto arbitrary substrates but also its highly controlled and non-destructive characteristic. With a hole structure as the support, fully-stretched free-standing thin film is prepared. The successful transfer to a curved surface demonstrates the possibility for production of thin film-coated complex optical components. Ultrathin (35 nm) hybrid film transferred onto PET (50 μm thick) shows high transparency (>90% in visible range), conductivity (1.54 × 10(4) S/m), and flexibility (radius of curvature down to mm scale). The reported transfer method would provide a powerful route towards complex thin film-based structures/devices.

  13. RESEARCH ON THE ELECTRONIC AND OPTICAL PROPERTIES OF POLYMER AND OTHER ORGANIC MOLECULAR THIN FILMS

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    ALEXEI G. VITUKHNOVSKY; IGOR I. SOBELMAN - RUSSIAN ACADEMY OF SCIENCES

    1995-09-06

    Optical properties of highly ordered films of poly(p-phenylene) (PPP) on different substrates, thin films of mixtures of conjugated polymers, of fullerene and its composition with polymers, molecular J-aggregates of cyanine dyes in frozen matrices have been studied within the framework of the Agreement. Procedures of preparation of high-quality vacuum deposited PPP films on different substrates (ITO, Si, GaAs and etc.) were developed. Using time-correlated single photon counting technique and fluorescence spectroscopy the high quality of PPP films has been confirmed. Dependence of structure and optical properties on the conditions of preparation were investigated. The fluorescence lifetime and spectra of highlymore » oriented vacuum deposited PPP films were studied as a function of the degree of polymerization. It was shown for the first time that the maximum fluorescence quantum yield is achieved for the chain length approximately equal to 35 monomer units. The selective excitation of luminescence of thin films of PPP was performed in the temperature range from 5 to 300 K. The total intensity of luminescence monotonically decreases with decreasing temperature. Conditions of preparation of highly cristallyne fullerene C{sub 60} films by the method of vacuum deposition were found. Composites of C{sub 60} with conjugated polymers PPV and polyacetylene (PA) were prepared. The results on fluorescence quenching, IR and resonant Raman spectroscopy are consistent with earlier reported ultrafast photoinduced electron transfer from PPV to C{sub 60} and show that the electron transfer is absent in the case of the PA-C{sub 60} composition. Strong quenching of PPV fluorescence was observed in the PPV-PA blends. The electron transfer from PPV to PA can be considered as one of the possible mechanisms of this quenching. The dynamics of photoexcitations in different types of J-aggregates of the carbocyanine dye was studied at different temperatures in frozen matrices. The

  14. Structural and electrical properties of CZTS thin films by electrodeposition

    NASA Astrophysics Data System (ADS)

    Rao, M. C.; Basha, Sk. Shahenoor

    2018-06-01

    CZTS (Cu2ZnSnS4) thin films were coated on ITO glass substrates by single bath electrodeposition technique. The prepared films were subsequently characterized by XRD, SEM, FTIR, UV-visible spectroscopy and Raman studies. The thickness of the thin films was measured by wedge method. X-ray diffraction studies revealed the formation of polycrystalline phase. The morphological surface of the prepared thin films was examined by SEM and AFM and showed the presence of microcrystals on the surface of the samples. The elemental analysis and their compositional ratios present in the samples were confirmed by the energy dispersive X-ray analysis. Functional groups and the position of band structure involved in the materials were confirmed by FTIR. Optical absorption studies were performed on the prepared thin films in the wavelength ranging from 300 to 1000 nm and the energy bandgap values were found to be in the range from 1.39 to 1.60 eV. Raman spectral peak which was observed at 360 cm-1 correspond to kesterite phase, was formed due to the vibration of the molecules. Electrical measurements confirmed the nature of the thin film depending on the charge concentration present in the samples.

  15. Advances in Thin Film Thermocouple Durability Under High Temperature and Pressure Testing Conditions

    NASA Technical Reports Server (NTRS)

    Martin, Lisa C.; Fralick, Gustave C.; Taylor, Keith F.

    1999-01-01

    Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.

  16. Electroluminescence of thin-film CdTe solar cells and modules

    NASA Astrophysics Data System (ADS)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  17. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    NASA Astrophysics Data System (ADS)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  18. Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

    NASA Astrophysics Data System (ADS)

    Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

    1995-05-01

    Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

  19. Comparative study of textured and epitaxial ZnO films

    NASA Astrophysics Data System (ADS)

    Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

    2000-06-01

    ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

  20. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  1. Characterization of diamond thin films and related materials

    NASA Astrophysics Data System (ADS)

    McKindra, Travis Kyle

    Thin carbon films including sputtered deposited graphite and CO 2 laser-assisted combustion-flame deposited graphite and diamond thin films were characterized using optical and electron microscopy, X-ray diffraction and micro-Raman spectroscopy. Amorphous carbon thin films were deposited by DC magnetron sputtering using Ar/O2 gases. The film morphology changed with the oxygen content. The deposition rate decreased as the amount of oxygen increased due to oxygen reacting with the growing film. The use of oxygen in the working gas enhanced the crystalline nature of the films. Graphite was deposited on WC substrates by a CO2 laser-assisted O2/C2H2 combustion-flame method. Two distinct microstructural areas were observed; an inner core of dense material surrounded by an outer shell of lamellar-like material. The deposits were crystalline regardless of the laser power and deposition times of a few minutes. Diamond films were deposited by a CO2 laser-assisted O 2/C2H2/C2H4 combustion-flame method with the laser focused parallel to the substrate surface. The laser enhanced diamond growth was most pronounced when deposited with a 10.532 microm CO2 laser wavelength tuned to the CH2-wagging vibrational mode of the C2H4 molecule. Nucleation of diamond thin films deposited with and without using a CO 2 laser-assisted combustion-flame process was investigated. With no laser there was nucleation of a sub-layer of grains followed by irregular grain growth. An untuned laser wavelength yielded nucleation of a sub-layer then columnar grain growth. The 10.532 microm tuned laser wavelength caused growth of columnar grains.

  2. The state of the art of thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  3. Sb:SnO2 thin films-synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

    2018-04-01

    Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

  4. Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

    PubMed

    Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

    2015-01-28

    Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

  5. Deployable telescope having a thin-film mirror and metering structure

    DOEpatents

    Krumel, Leslie J [Cedar Crest, NM; Martin, Jeffrey W [Albuquerque, NM

    2010-08-24

    A deployable thin-film mirror telescope comprises a base structure and a metering structure. The base structure houses a thin-film mirror, which can be rolled for stowage and unrolled for deployment. The metering structure is coupled to the base structure and can be folded for stowage and unfolded for deployment. In the deployed state, the unrolled thin-film mirror forms a primary minor for the telescope and the unfolded metering structure positions a secondary minor for the telescope.

  6. Magnetoelastic Properties of Magnetic Thin Films Using the Magnetooptic Kerr Effect

    NASA Astrophysics Data System (ADS)

    Mayo, Elizabeth; Lederman, David

    1998-03-01

    The magnetoelastic properties of Co and Fe thin films were measured using the magnetooptic Kerr effect (MOKE). Films were grown via magnetron sputtering on thin mica substrates. Magnetization loops were measured using MOKE with the magnetic field along different in-plane directions. Subsequently, the samples were mounted on a cylindrical sample holder, which imposed a well-defined strain to the film. This caused the magnetization loops to change dramatically due to the magnetoelastic coefficient of the thin film materials. The effects of the surface roughness and film thickness will also be discussed.

  7. A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

    PubMed

    Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

    2017-06-01

    A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Thin-film decoupling capacitors for multi-chip modules

    NASA Astrophysics Data System (ADS)

    Dimos, D.; Lockwood, S. J.; Schwartz, R. W.; Rogers, M. S.

    Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ((var epsilon) greater than or equal to 900), low dielectric losses (tan(delta) = 0.01), excellent insulation resistances (rho greater than 10(exp 13) (Omega)-cm at 125 C), and good breakdown field strengths (E(sub B) = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 micron thick, which results in a large capacitance/area (8-9 nF/sq mm). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

  9. Recent progress of obliquely deposited thin films for industrial applications

    NASA Astrophysics Data System (ADS)

    Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

    1999-06-01

    More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

  10. Nanoporous cerium oxide thin film for glucose biosensor.

    PubMed

    Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

    2009-03-15

    Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

  11. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  12. Hybrid thin-film amplifier

    NASA Technical Reports Server (NTRS)

    Cleveland, G.

    1977-01-01

    Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

  13. Interference effects in the sum frequency generation spectra of thin organic films. II: Applications to different thin-film systems.

    PubMed

    Tong, Yujin; Zhao, Yanbao; Li, Na; Ma, Yunsheng; Osawa, Masatoshi; Davies, Paul B; Ye, Shen

    2010-07-21

    In this paper, the results of the modeling calculations carried out for predicting the interference effects expected in the sum frequency generation (SFG) spectra of a specific thin-layer system, described in the accompanying paper, are tested by comparing them with the experimental spectra obtained for a real thin-layer film comprising an organic monolayer/variable thickness dielectric layer/gold substrate. In this system, two contributions to the SFG spectra arise, a resonant contribution from the organic film and a nonresonant contribution from the gold substrate. The modeling calculations are in excellent agreement with the experimental spectra over a wide range of thicknesses and for different polarization combinations. The introduction of another resonant monolayer adjacent to the gold substrate and with the molecules having a reverse orientation has a significant affect on the spectral shapes which is predicted. If a dielectric substrate such as CaF(2) is used instead of a gold substrate, only the spectral intensities vary with the film thickness but not the spectral shapes. The counterpropagating beam geometry will change both the thickness dependent spectral shapes and the intensity of different vibrational modes in comparison with a copropagating geometry. The influences of these experimental factors, i.e., the molecular orientational structure in the thin film, the nature of the substrate, and the selected incident beam geometry, on the experimental SFG spectra are quantitatively predicted by the calculations. The thickness effects on the signals from a SFG active monolayer contained in a thin liquid-layer cell of the type frequently used for in situ electrochemical measurements is also discussed. The modeling calculation is also valid for application to other thin-film systems comprising more than two resonant SFG active interfaces by appropriate choice of optical geometries and relevant optical properties.

  14. Effect of current injection into thin-film Josephson junctions

    DOE PAGES

    Kogan, V. G.; Mints, R. G.

    2014-11-11

    New thin-film Josephson junctions have recently been tested in which the current injected into one of the junction banks governs Josephson phenomena. One thus can continuously manage the phase distribution at the junction by changing the injected current. Our method of calculating the distribution of injected currents is also proposed for a half-infinite thin-film strip with source-sink points at arbitrary positions at the film edges. The strip width W is assumed small relative to Λ=2λ 2/d;λ is the bulk London penetration depth of the film material and d is the film thickness.

  15. Dynamics and stability of thin liquid films

    NASA Astrophysics Data System (ADS)

    Craster, R. V.; Matar, O. K.

    2009-07-01

    The dynamics and stability of thin liquid films have fascinated scientists over many decades: the observations of regular wave patterns in film flows down a windowpane or along guttering, the patterning of dewetting droplets, and the fingering of viscous flows down a slope are all examples that are familiar in daily life. Thin film flows occur over a wide range of length scales and are central to numerous areas of engineering, geophysics, and biophysics; these include nanofluidics and microfluidics, coating flows, intensive processing, lava flows, dynamics of continental ice sheets, tear-film rupture, and surfactant replacement therapy. These flows have attracted considerable attention in the literature, which have resulted in many significant developments in experimental, analytical, and numerical research in this area. These include advances in understanding dewetting, thermocapillary- and surfactant-driven films, falling films and films flowing over structured, compliant, and rapidly rotating substrates, and evaporating films as well as those manipulated via use of electric fields to produce nanoscale patterns. These developments are reviewed in this paper and open problems and exciting research avenues in this thriving area of fluid mechanics are also highlighted.

  16. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    PubMed

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  17. Highly flexible electronics from scalable vertical thin film transistors.

    PubMed

    Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

    2014-03-12

    Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

  18. Numerical simulations of electrohydrodynamic evolution of thin polymer films

    NASA Astrophysics Data System (ADS)

    Borglum, Joshua Christopher

    Recently developed needleless electrospinning and electrolithography are two successful techniques that have been utilized extensively for low-cost, scalable, and continuous nano-fabrication. Rational understanding of the electrohydrodynamic principles underneath these nano-manufacturing methods is crucial to fabrication of continuous nanofibers and patterned thin films. This research project is to formulate robust, high-efficiency finite-difference Fourier spectral methods to simulate the electrohydrodynamic evolution of thin polymer films. Two thin-film models were considered and refined. The first was based on reduced lubrication theory; the second further took into account the effect of solvent drying and dewetting of the substrate. Fast Fourier Transform (FFT) based spectral method was integrated into the finite-difference algorithms for fast, accurately solving the governing nonlinear partial differential equations. The present methods have been used to examine the dependencies of the evolving surface features of the thin films upon the model parameters. The present study can be used for fast, controllable nanofabrication.

  19. Fiber-Optic Temperature Sensor Using a Thin-Film Fabry-Perot Interferometer

    NASA Technical Reports Server (NTRS)

    Beheim, Glenn

    1997-01-01

    A fiber-optic temperature sensor was developed that is rugged, compact, stable, and can be inexpensively fabricated. This thin-film interferometric temperature sensor was shown to be capable of providing a +/- 2 C accuracy over the range of -55 to 275 C, throughout a 5000 hr operating life. A temperature-sensitive thin-film Fabry-Perot interferometer can be deposited directly onto the end of a multimode optical fiber. This batch-fabricatable sensor can be manufactured at a much lower cost than can a presently available sensor, which requires the mechanical attachment of a Fabry-Perot interferometer to a fiber. The principal disadvantage of the thin-film sensor is its inherent instability, due to the low processing temperatures that must be used to prevent degradation of the optical fiber's buffer coating. The design of the stable thin-film temperature sensor considered the potential sources of both short and long term drifts. The temperature- sensitive Fabry-Perot interferometer was a silicon film with a thickness of approx. 2 microns. A laser-annealing process was developed which crystallized the silicon film without damaging the optical fiber. The silicon film was encapsulated with a thin layer of Si3N4 over coated with aluminum. Crystallization of the silicon and its encapsulation with a highly stable, impermeable thin-film structure were essential steps in producing a sensor with the required long-term stability.

  20. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  1. Effect of cadmium incorporation on the properties of zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

    2018-02-01

    Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

  2. Nucleation of fcc Ta when heating thin films

    DOE PAGES

    Janish, Matthew T.; Mook, William M.; Carter, C. Barry

    2014-10-25

    Thin tantalum films have been studied during in-situ heating in a transmission electron microscope. Diffraction patterns from the as-deposited films were typical of amorphous materials. Crystalline grains were observed to form when the specimen was annealed in-situ at 450°C. Particular attention was addressed to the formation and growth of grains with the face-centered cubic (fcc) crystal structure. As a result, these observations are discussed in relation to prior work on the formation of fcc Ta by deformation and during thin film deposition.

  3. Development of flexible Ni80Fe20 magnetic nano-thin films

    NASA Astrophysics Data System (ADS)

    Vopson, M. M.; Naylor, J.; Saengow, T.; Rogers, E. G.; Lepadatu, S.; Fetisov, Y. K.

    2017-11-01

    Flexible magnetic Ni80Fe20 thin films with excellent adhesion, mechanical and magnetic properties have been fabricated using magnetron plasma deposition. We demonstrate that flexible Ni80Fe20 thin films maintain their non-flexible magnetic properties when the films are over 60 nm thick. However, when their thickness is reduced, the flexible thin films display significant increase in their magnetic coercive field compared to identical films coated on a solid Silicon substrate. For a 15 nm flexible Ni80Fe20 film coated onto 110 μm Polyvinylidene fluoride polymer substrate, we achieved a remarkable 355% increase in the magnetic coercive field relative to the same film deposited onto a Si substrate. Experimental evidence, backed by micro-magnetic modelling, indicates that the increase in the coercive fields is related to the larger roughness texture of the flexible substrates. This effect essentially transforms soft Ni80Fe20 permalloy thin films into medium/hard magnetic films allowing not only mechanical flexibility of the structure, but also fine tuning of their magnetic properties.

  4. Extending the 3ω method: thermal conductivity characterization of thin films.

    PubMed

    Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

    2013-08-01

    A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

  5. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  6. Effects of bacteria on CdS thin films used in technological devices

    NASA Astrophysics Data System (ADS)

    Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

    2017-04-01

    Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

  7. Free-Space Time-Domain Method for Measuring Thin Film Dielectric Properties

    DOEpatents

    Li, Ming; Zhang, Xi-Cheng; Cho, Gyu Cheon

    2000-05-02

    A non-contact method for determining the index of refraction or dielectric constant of a thin film on a substrate at a desired frequency in the GHz to THz range having a corresponding wavelength larger than the thickness of the thin film (which may be only a few microns). The method comprises impinging the desired-frequency beam in free space upon the thin film on the substrate and measuring the measured phase change and the measured field reflectance from the reflected beam for a plurality of incident angles over a range of angles that includes the Brewster's angle for the thin film. The index of refraction for the thin film is determined by applying Fresnel equations to iteratively calculate a calculated phase change and a calculated field reflectance at each of the plurality of incident angles, and selecting the index of refraction that provides the best mathematical curve fit with both the dataset of measured phase changes and the dataset of measured field reflectances for each incident angle. The dielectric constant for the thin film can be calculated as the index of refraction squared.

  8. Thin-film cadmium telluride photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Compaan, A. D.; Bohn, R. G.

    1994-09-01

    This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

  9. Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

    NASA Astrophysics Data System (ADS)

    Ahmed, Moinuddin; Butler, Donald P.

    2015-07-01

    Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

  10. Electrochemical properties of magnetron sputtered WO{sub 3} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Madhavi, V.; Kondaiah, P.; Hussain, O. M.

    2013-02-05

    Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly inmore » the first few cycles and stabilized at a lesser stage.« less

  11. Multiferroic RMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Fontcuberta, Josep

    2015-03-01

    Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress, providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, the development of thin films of multiferroic materials have also progressed enormously and nowadays thin-film manganites are available, with properties mimicking those of bulk compounds. Here we review achievements on the growth of hexagonal and orthorhombic RMnO3 epitaxial thin films and the characterization of their magnetic and ferroelectric properties, we discuss some challenging issues, and we suggest some guidelines for future research and developments. En ce qui concerne les applications, le développement de films minces de matériaux multiferroïques a aussi énormément progressé, et de nos jours des films minces de manganites avec des propriétés similaires à celles des matériaux massifs existent. Nous passons en revue ici les résultats obtenus dans le domaine de la croissance de couches minces épitaxiés de RMnO3 hexagonal et orthorhombique et de la caractérisation de leurs propriétés magnétiques et ferroélectriques. Nous discutons certains enjeux et proposons quelques idées pour des recherches et développements futurs.

  12. High-temperature crystallized thin-film PZT on thin polyimide substrates

    NASA Astrophysics Data System (ADS)

    Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

    2017-10-01

    Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

  13. Doping induced c-axis oriented growth of transparent ZnO thin film

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.

    2018-04-01

    c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

  14. Electrochemical Analysis of Conducting Polymer Thin Films

    PubMed Central

    Vyas, Ritesh N.; Wang, Bin

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene) (PPV), in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values. PMID:20480052

  15. Thin Film Approaches to the SRF Cavity Problem: Fabrication and Characterization of Superconducting Thin Films

    NASA Astrophysics Data System (ADS)

    Beringer, Douglas B.

    Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory's CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency - 1.5 GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m - there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (approximately 45 MV/m for Niobium) where inevitable thermodynamic breakdown occurs. With state of the art niobium based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio-frequency applications.

  16. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

    2016-01-01

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  17. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, III, Jerome J.; Halpern, Bret L.

    1993-01-01

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

  18. Microwave plasma assisted supersonic gas jet deposition of thin film materials

    DOEpatents

    Schmitt, J.J. III; Halpern, B.L.

    1993-10-26

    An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures. 5 figures.

  19. Cr:SnO2 thin films-synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

    2018-04-01

    Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

  20. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  1. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  2. Thin film coatings for space electrical power system applications

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.

    1989-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  3. Thin film coatings for space electrical power system applications

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  4. Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

    NASA Technical Reports Server (NTRS)

    VanKeuls, Frederick W.

    1999-01-01

    Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

  5. Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

    PubMed Central

    Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

    2016-01-01

    Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF) = 66%. PMID:28773647

  6. Thin film encapsulation for flexible AM-OLED: a review

    NASA Astrophysics Data System (ADS)

    Park, Jin-Seong; Chae, Heeyeop; Chung, Ho Kyoon; In Lee, Sang

    2011-03-01

    Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This work provides a review of promising thin-film barrier technologies as well as the basic gas diffusion background. Topics include the significance of the device structure, permeation rate measurement, proposed permeation mechanism, and thin-film deposition technologies (Vitex system and atomic layer deposition (ALD)/molecular layer deposition (MLD)) for effective barrier films.

  7. Single Source Precursors for Thin Film Solar Cells

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

    2002-01-01

    The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

  8. Potential of thin-film solar cell module technology

    NASA Technical Reports Server (NTRS)

    Shimada, K.; Ferber, R. R.; Costogue, E. N.

    1985-01-01

    During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

  9. Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

    NASA Astrophysics Data System (ADS)

    Sathisha, D.; Naik, K. Gopalakrishna

    2018-05-01

    Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

  10. Thin Film Electrodes for Rare Event Detectors

    NASA Astrophysics Data System (ADS)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  11. A proposal for epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

  12. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  13. Synthesis and characterization of lithium intercalation electrodes based on iron oxide thin films

    NASA Astrophysics Data System (ADS)

    Sarradin, J.; Guessous, A.; Ribes, M.

    Sputter-deposited iron oxide thin films are investigated as a possible negative electrode for rocking-chair microbatteries. Experimental conditions related to the manufacturing of amorphous thin films suitable to a large number of available intercalation sites are described. Structural and physical properties of the thin layer films are presented. The conductivities of the amorphous thin films were found to be very high compared with those of the respective crystalline forms. Regarding the electrochemical behaviour, Fe 2O 3-based thin films electrodes are able to store and reversibly exchange lithium ions. At a C/2 charge/discharge rate with 100% depth-of-discharge (DOD), the specific capacity of these amorphous thin film electrodes remains almost constant and close to 330 Ah/kg after more than 120 charge/discharge cycles.

  14. Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, Jingyu; Xiao, Yihan; Xu, Ting

    Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. Lastly, the present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

  15. Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, Jingyu; Xiao, Yihan; Xu, Ting

    Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. The present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

  16. Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

    DOE PAGES

    Huang, Jingyu; Xiao, Yihan; Xu, Ting

    2017-02-20

    Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. Lastly, the present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

  17. Effect of Al doping on performance of ZnO thin film transistors

    NASA Astrophysics Data System (ADS)

    Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

    2018-03-01

    In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

  18. Thin Film Delamination Using a High Power Pulsed Laser Materials Interaction

    NASA Astrophysics Data System (ADS)

    Sherman, Bradley

    Thin films attached to substrates are only effective while the film is adhered to the substrate. When the film begins to spall the whole system can fail, thus knowing the working strength of the film substrate system is important when designing structures. Surface acoustic waves (SAWs) are suitable for characterization of thin film mechanical properties due to the confinement of their energy within a shallow depth from a material surface. In this project, we study the feasibility of inducing dynamic interfacial failure in thin films using surface waves generated by a high power pulsed laser. Surface acoustic waves are modeled using a finite element numerical code, where the ablative interaction between the pulsed laser and the incident film is modeled using equivalent surface mechanical stresses. The numerical results are validated using experimental results from a laser ultrasonic setup. Once validated the normal film-substrate interfacial stress can be extracted from the numerical code and tends to be in the mega-Pascal range. This study uses pulsed laser generation to produce SAW in various metallic thin film/substrate systems. Each system varies in its response based on its dispersive relationship and as such requires individualized numerical modeling to match the experimental data. In addition to pulsed SAW excitation using an ablative source, a constrained thermo-mechanical load produced by the ablation of a metal film under a polymer layer is explored to generate larger dynamic mechanical stresses. These stresses are sufficient to delaminate the thin film in a manner similar to a peel test. However, since the loading is produced by a pulsed laser source, it occurs at a much faster rate, limiting the influence of slower damage modes that are present in quasi-static loading. This approach is explored to predict the interfacial fracture toughness of weak thin film interfaces.

  19. Adsorbed water and thin liquid films on Mars

    NASA Astrophysics Data System (ADS)

    Boxe, C. S.; Hand, K. P.; Nealson, K. H.; Yung, Y. L.; Yen, A. S.; Saiz-Lopez, A.

    2012-07-01

    At present, bulk liquid water on the surface and near-subsurface of Mars does not exist due to the scarcity of condensed- and gas-phase water, pressure and temperature constraints. Given that the nuclei of soil and ice, that is, the soil solid and ice lattice, respectively, are coated with adsorbed and/or thin liquid films of water well below 273 K and the availability of water limits biological activity, we quantify lower and upper limits for the thickness of such adsorbed/water films on the surface of the Martian regolith and for subsurface ice. These limits were calculated based on experimental and theoretical data for pure water ice and water ice containing impurities, where water ice containing impurities exhibit thin liquid film enhancements, ranging from 3 to 90. Close to the cold limit of water stability (i.e. 273 K), thin liquid film thicknesses at the surface of the Martian regolith is 0.06 nm (pure water ice) and ranges from 0.2 to 5 nm (water ice with impurities). An adsorbed water layer of 0.06 nm implies a dessicated surface as the thickness of one monolayer of water is 0.3 nm but represents 0.001-0.02% of the Martian atmospheric water vapour inventory. Taking into account the specific surface area (SSA) of surface-soil (i.e. top 1 mm of regolith and 0.06 nm adsorbed water layer), shows Martian surface-soil may contain interfacial water that represents 6-66% of the upper- and lower-limit atmospheric water vapour inventory and almost four times and 33%, the lower- and upper-limit Martian atmospheric water vapour inventory. Similarly, taking the SSA of Martian soil, the top 1 mm or regolith at 5 nm thin liquid water thickness, yields 1.10×1013 and 6.50×1013 litres of waters, respectively, 55-325 times larger than Mars' atmospheric water vapour inventory. Film thicknesses of 0.2 and 5 nm represent 2.3×104-1.5×106 litres of water, which is 6.0×10-7-4.0×10-4%, respectively, of a 10 pr μm water vapour column, and 3.0×10-6-4.0×10-4% and 6.0×10

  20. Design and fabrication of GaAs OMIST photodetector

    NASA Astrophysics Data System (ADS)

    Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

    1998-08-01

    We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

  1. Quantitative analysis of tear film fluorescence and discomfort during tear film instability and thinning.

    PubMed

    Begley, Carolyn; Simpson, Trefford; Liu, Haixia; Salvo, Eliza; Wu, Ziwei; Bradley, Arthur; Situ, Ping

    2013-04-12

    The purpose of this study was to test the association between tear film fluorescence changes during tear break-up (TBU) or thinning and the concurrent ocular sensory response. Sixteen subjects kept one eye open as long as possible (MBI), indicated their discomfort level continuously, and rated ocular sensations of irritation, stinging, burning, pricking, and cooling using visual analog scales (VAS). Fluorescence of the tear film was quantified by a pixel-based analysis of the median pixel intensity (PI), TBU, and percentage of dark pixels (DarkPix) over time. A cutoff of 5% TBU was used to divide subjects into either break-up (BU) or minimal break-up (BUmin) groups. Tear film fluorescence decreased (median PI) and the percentage of TBU and DarkPix increased in all trials, with the rate significantly greater in the BU than the BUmin group (Mann-Whitney U test, P < 0.05). The rate of increasing discomfort during trials was highly correlated with the rate of decrease in median PI and developing TBU (Spearman's, r ≥ 0.70). Significant correlations were found between corneal fluorescence, MBI, and sensory measures. Concentration quenching of fluorescein dye with tear film thinning best explains decreasing tear film fluorescence during trials. This was highly correlated with increasing ocular discomfort, suggesting that both tear film thinning and TBU stimulate underlying corneal nerves, although TBU produced more rapid stimulation. Slow increases in tear film hyperosmolarity may cause the gradual increase in discomfort during slow tear film thinning, whereas the sharp increases in discomfort during TBU suggest a more complex stimulus.

  2. Studies of electronic and magnetic properties of LaVO3 thin film

    NASA Astrophysics Data System (ADS)

    Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

    2018-04-01

    We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

  3. Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

    NASA Astrophysics Data System (ADS)

    Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

    2014-06-01

    A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

  4. Nanopore thin film enabled optical platform for drug loading and release.

    PubMed

    Song, Chao; Che, Xiangchen; Que, Long

    2017-08-07

    In this paper, a drug loading and release device fabricated using nanopore thin film and layer-by-layer (LbL) nanoassembly is reported. The nanopore thin film is a layer of anodic aluminum oxide (AAO), consisting of honeycomb-shape nanopores. Using the LbL nanoassembly process, the drug, using gentamicin sulfate (GS) as the model, can be loaded into the nanopores and the stacked layers on the nanopore thin film surface. The drug release from the device is achieved by immersing it into flowing DI water. Both the loading and release processes can be monitored optically. The effect of the nanopore size/volume on drug loading and release has also been evaluated. Further, the neuron cells have been cultured and can grow normally on the nanopore thin film, verifying its bio-compatibility. The successful fabrication of nanopore thin film device on silicon membrane render it as a potential implantable controlled drug release device.

  5. Energy Migration in Organic Thin Films--From Excitons to Polarons

    NASA Astrophysics Data System (ADS)

    Mullenbach, Tyler K.

    The rise of organic photovoltaic devices (OPVs) and organic light-emitting devices has generated interest in the physics governing exciton and polaron dynamics in thin films. Energy transfer has been well studied in dilute solutions, but there are emergent properties in thin films and greater complications due to complex morphologies which must be better understood. Despite the intense interest in energy transport in thin films, experimental limitations have slowed discoveries. Here, a new perspective of OPV operation is presented where photovoltage, instead of photocurrent, plays the fundamental role. By exploiting this new vantage point the first method of measuring the diffusion length (LD) of dark (non-luminescent) excitons is developed, a novel photodetector is invented, and the ability to watch exciton arrival, in real-time, at the donor-acceptor heterojunction is presented. Using an enhanced understanding of exciton migration in thin films, paradigms for enhancing LD by molecular modifications are discovered, and the first exciton gate is experimentally and theoretically demonstrated. Generation of polarons from exciton dissociation represents a second phase of energy migration in OPVs that remains understudied. Current approaches are capable of measuring the rate of charge carrier recombination only at open-circuit. To enable a better understanding of polaron dynamics in thin films, two new approaches are presented which are capable of measuring both the charge carrier recombination and transit rates at any OPV operating voltage. These techniques pave the way for a more complete understanding of charge carrier kinetics in molecular thin films.

  6. Tungsten-rhenium thin film thermocouples for SiC-based ceramic matrix composites

    NASA Astrophysics Data System (ADS)

    Tian, Bian; Zhang, Zhongkai; Shi, Peng; Zheng, Chen; Yu, Qiuyue; Jing, Weixuan; Jiang, Zhuangde

    2017-01-01

    A tungsten-rhenium thin film thermocouple is designed and fabricated, depending on the principle of thermal-electric effect caused by the high temperature. The characteristics of thin film thermocouples in different temperatures are investigated via numerical analysis and analog simulation. The working mechanism and thermo-electric features of the thermocouples are analyzed depending on the simulation results. Then the thin film thermocouples are fabricated and calibrated. The calibration results show that the thin film thermocouples based on the tungsten-rhenium material achieve ideal static characteristics and work well in the practical applications.

  7. Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

    PubMed

    Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-08-29

    Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

  8. Aging in Thin Metallic Films.

    DTIC Science & Technology

    1978-03-01

    NSWC/WOL TR 77-178 SUMMARY This raport gives measurements of changes in the magnetic properties of thin films due to oxidation. Evaporated NiFe ...Fi lm An i sotropy NiFe Thi n Fi lm Th in Fi lm Magnetos triction Magnetic Fi lm Aging - Magnetic Film Anneal ing — ~~~~. A BSTRACT CenhSnu. on r.v...rs• .Id. I nsc•ss y ond Idsnhl~ b block me.eb.r) _ . .—~~ Low magnetostriction NiFe and NiFe based’ ternary films 220A to 340A thick were prepared by

  9. Transparent Al+3 doped MgO thin films for functional applications

    NASA Astrophysics Data System (ADS)

    Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

    2017-08-01

    The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

  10. The Tuning of Optical Properties of Nanoscale MOFs-Based Thin Film through Post-Modification.

    PubMed

    Yin, Wenchang; Tao, Cheng-An; Zou, Xiaorong; Wang, Fang; Qu, Tianlian; Wang, Jianfang

    2017-08-29

    Optical properties, which determine the application of optical devices in different fields, are the most significant properties of optical thin films. In recent years, Metal-organic framework (MOF)-based optical thin films have attracted increasing attention because of their novel optical properties and important potential applications in optical and photoelectric devices, especially optical thin films with tunable optical properties. This study reports the first example of tuning the optical properties of a MOF-based optical thin film via post-modification. The MOF-based optical thin film was composed of NH₂-MIL-53(Al) nanorods (NRs) (MIL: Materials from Institute Lavoisier), and was constructed via a spin-coating method. Three aldehydes with different lengths of carbon chains were chosen to modify the MOF optical thin film to tune their optical properties. After post-modification, the structural color of the NH₂-MIL-53(Al) thin film showed an obvious change from purple to bluish violet and cyan. The reflection spectrum and the reflectivity also altered in different degrees. The effective refractive index ( n eff ) of MOFs thin film can also be tuned from 1.292 to 1.424 at a wavelength of 750 nm. The success of tuning of the optical properties of MOFs thin films through post-modification will make MOFs optical thin films meet different needs of optical properties in various optical and optoelectronic devices.

  11. The Tuning of Optical Properties of Nanoscale MOFs-Based Thin Film through Post-Modification

    PubMed Central

    Zou, Xiaorong; Wang, Fang; Qu, Tianlian; Wang, Jianfang

    2017-01-01

    Optical properties, which determine the application of optical devices in different fields, are the most significant properties of optical thin films. In recent years, Metal-organic framework (MOF)-based optical thin films have attracted increasing attention because of their novel optical properties and important potential applications in optical and photoelectric devices, especially optical thin films with tunable optical properties. This study reports the first example of tuning the optical properties of a MOF-based optical thin film via post-modification. The MOF-based optical thin film was composed of NH2-MIL-53(Al) nanorods (NRs) (MIL: Materials from Institute Lavoisier), and was constructed via a spin-coating method. Three aldehydes with different lengths of carbon chains were chosen to modify the MOF optical thin film to tune their optical properties. After post-modification, the structural color of the NH2-MIL-53(Al) thin film showed an obvious change from purple to bluish violet and cyan. The reflection spectrum and the reflectivity also altered in different degrees. The effective refractive index (neff) of MOFs thin film can also be tuned from 1.292 to 1.424 at a wavelength of 750 nm. The success of tuning of the optical properties of MOFs thin films through post-modification will make MOFs optical thin films meet different needs of optical properties in various optical and optoelectronic devices. PMID:28850057

  12. Formation and prevention of fractures in sol-gel-derived thin films.

    PubMed

    Kappert, Emiel J; Pavlenko, Denys; Malzbender, Jürgen; Nijmeijer, Arian; Benes, Nieck E; Tsai, Peichun Amy

    2015-02-07

    Sol-gel-derived thin films play an important role as the functional coatings for various applications that require crack-free films to fully function. However, the fast drying process of a standard sol-gel coating often induces mechanical stresses, which may fracture the thin films. An experimental study on the crack formation in sol-gel-derived silica and organosilica ultrathin (submicron) films is presented. The relationships among the crack density, inter-crack spacing, and film thickness were investigated by combining direct micrograph analysis with spectroscopic ellipsometry. It is found that silica thin films are more prone to fracturing than organosilica films and have a critical film thickness of 300 nm, above which the film fractures. In contrast, the organosilica films can be formed without cracks in the experimentally explored regime of film thickness up to at least 1250 nm. These results confirm that ultrathin organosilica coatings are a robust silica substitute for a wide range of applications.

  13. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000more » hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was

  14. Chemical bath deposition of II-VI compound thin films

    NASA Astrophysics Data System (ADS)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  15. YSZ thin films with minimized grain boundary resistivity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mills, Edmund M.; Kleine-Boymann, Matthias; Janek, Juergen

    2016-03-31

    In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e. g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here we report that the ionic conductivity ofmore » yttria stabilized zirconia thin films with nano-­ columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500°C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film- substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg2+ diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary “design” as an attractive method to obtain highly conductive solid electrolyte thin films.« less

  16. Synthesis and characterization of ZnO thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Anilkumar, T. S., E-mail: anil24march@gmail.com; Girija, M. L., E-mail: girija.ml.grt1@gmail.com; Venkatesh, J., E-mail: phph9502@yahoo.com

    2016-05-06

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivitymore » of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.« less

  17. Atomic-scale structural and electronic properties of SrTiO3/GaAs interfaces: A combined STEM-EELS and first-principles study

    NASA Astrophysics Data System (ADS)

    Hong, Liang; Bhatnagar, Kunal; Droopad, Ravi; Klie, Robert F.; Öǧüt, Serdar

    2017-07-01

    The electronic properties of epitaxial oxide thin films grown on compound semiconductors are largely determined by the interfacial atomic structure, as well as the thermodynamic conditions during synthesis. Ferroelectric polarization and Fermi-level pinning in SrTiO3 films have been attributed to the presence of oxygen vacancies at the oxide/semiconductor interface. Here, we present scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy analyses of GaAs films grown on SrTiO3 combined with first-principles calculations to determine the atomic and electronic structures of the SrTiO3/GaAs interfaces. An atomically abrupt SrO/As interface is observed and the interfacial SrO layer is found to be O-deficient. First-principles density functional theory (DFT) calculations show SrO/Ga and Sr/As interfaces are favorable under O-rich and O-poor conditions, respectively. The SrO/Ga interface is reconstructed via the formation of Ga-Ga dimers while the Sr/As interface is abrupt and consistent with the experiment. DFT calculations further reveal that intrinsic two-dimensional electron gas (2DEG) forms in both SrO/Ga and Sr/As interfaces, and the Fermi level is pinned to the localized 2DEG states. Interfacial O vacancies can enhance the 2DEG density while it is possible for Ga/As vacancies to unpin the Fermi level from the 2DEG states.

  18. Dynamics in thin folded polymer films

    NASA Astrophysics Data System (ADS)

    Croll, Andrew; Rozairo, Damith

    Origami and Kirigami inspired structures depend on a complex interplay between geometry and material properties. While clearly important to the overall function, very little attention has focused on how extreme curvatures and singularities in real materials influence the overall dynamic behaviour of folded structures. In this work we use a set of three polymer thin films in order to closely examine the interaction of material and geometry. Specifically, we use polydimethylsiloxane (PDMS), polystyrene (PS) and polycarbonate (PC) thin films which we subject to loading in several model geometries of varying complexity. Depending on the material, vastly different responses are noted in our experiments; D-cones can annihilate, cut or lead to a crumpling cascade when pushed through a film. Remarkably, order can be generated with additional perturbation. Finally, the role of adhesion in complex folded structures can be addressed. AFOSR under the Young Investigator Program (FA9550-15-1-0168).

  19. Thin Film Ceramic Strain Sensor Development for Harsh Environments: Interim Report on Identification of Candidate Thin Film Ceramics to Test for Viability for Static Strain Sensor Development

    NASA Technical Reports Server (NTRS)

    Wrbanek, John D.; Fralick, Gustave C.; Hunter, Gary W.

    2006-01-01

    The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in propulsion system applications. In order to have a more passive method of negating changes of resistance due to temperature, an effort is underway at NASA Glenn to develop high temperature thin film ceramic static strain gauges for application in turbine engines, specifically in the fan and compressor modules on blades. Other applications can be on aircraft hot section structures and on thermal protection systems. The near-term interim goal of the research effort was to identify candidate thin film ceramic sensor materials to test for viability and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. This goal was achieved by a thorough literature search for ceramics that have the potential for application as high temperature thin film strain gauges, reviewing potential candidate materials for chemical and physical compatibility with our microfabrication procedures and substrates.

  20. Surface proton transport of fully protonated poly(aspartic acid) thin films on quartz substrates

    NASA Astrophysics Data System (ADS)

    Nagao, Yuki; Kubo, Takahiro

    2014-12-01

    Thin film structure and the proton transport property of fully protonated poly(aspartic acid) (P-Asp100) have been investigated. An earlier study assessed partially protonated poly(aspartic acid), highly oriented thin film structure and enhancement of the internal proton transport. In this study of P-Asp100, IR p-polarized multiple-angle incidence resolution (P-MAIR) spectra were measured to investigate the thin film structure. The obtained thin films, with thicknesses of 120-670 nm, had no oriented structure. Relative humidity dependence of the resistance, proton conductivity, and normalized resistance were examined to ascertain the proton transport property of P-Asp100 thin films. The obtained data showed that the proton transport of P-Asp100 thin films might occur on the surface, not inside of the thin film. This phenomenon might be related with the proton transport of the biological system.

  1. Vapor phase synthesis of compound semiconductors, from thin films to nanoparticles

    NASA Astrophysics Data System (ADS)

    Sarigiannis, Demetrius

    around an easily replaceable, economical, 650-watt, tungsten-halogen lamp. The heater was successfully tested to temperatures up to 1500°F. The deposition reactor was successfully tested by growing a thin film of GaP on GaAs <100>. The film surface was imperfect but the experiments proved that the reactor was ready for service.

  2. Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Kondkar, V.; Rukade, D.; Bhattacharyya, V.

    2018-05-01

    Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.

  3. Utility of Thin-Film Solar Cells on Flexible Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Dickman, J. E.; Hepp, A. F.; Morel, D. L.; Ferekides, C. S.; Tuttle, J. R.; Hoffman, D. J.; Dhere, N. G.

    2004-01-01

    The thin-film solar cell program at NASA GRC is developing solar cell technologies for space applications which address two critical metrics: specific power (power per unit mass) and launch stowed volume. To be competitive for many space applications, an array using thin film solar cells must significantly increase specific power while reducing stowed volume when compared to the present baseline technology utilizing crystalline solar cells. The NASA GRC program is developing two approaches. Since the vast majority of the mass of a thin film solar cell is in the substrate, a thin film solar cell on a very lightweight flexible substrate (polymer or metal films) is being developed as the first approach. The second approach is the development of multijunction thin film solar cells. Total cell efficiency can be increased by stacking multiple cells having bandgaps tuned to convert the spectrum passing through the upper cells to the lower cells. Once developed, the two approaches will be merged to yield a multijunction, thin film solar cell on a very lightweight, flexible substrate. The ultimate utility of such solar cells in space require the development of monolithic interconnections, lightweight array structures, and ultra-lightweight support and deployment techniques.

  4. Synthesis, Characterization, and Electrochemical Properties of Polyaniline Thin Films

    NASA Astrophysics Data System (ADS)

    Rami, Soukaina

    Conjugated polymers have been used in various applications (battery, supercapacitor, electromagnetic shielding, chemical sensor, biosensor, nanocomposite, light-emitting-diode, electrochromic display etc.) due to their excellent conductivity, electrochemical and optical properties, and low cost. Polyaniline has attracted the researchers from all disciplines of science, engineering, and industry due to its redox properties, environmental stability, conductivity, and optical properties. Moreover, it is a polymer with fast electroactive switching and reversible properties displayed at low potential, which is an important feature in many applications. The thin oriented polyaniline films have been fabricated using self-assembly, Langmuir-Blodgett, in-situ self-assembly, layer-by-layer, and electrochemical technique. The focus of this thesis is to synthesize and characterize polyaniline thin films with and without dyes. Also, the purpose of this thesis is to find the fastest electroactive switching PANI electrode in different electrolytic medium by studying their electrochemical properties. These films were fabricated using two deposition techniques: in-situ self-assembly and electrochemical deposition. The characterization of these films was done using techniques such as Fourier Transform Infrared Spectroscopy (FTIR), UV-spectroscopy, Scanning Electron Microscope (SEM), and X-Ray Diffraction (XRD). FTIR and UV-spectroscopy showed similar results in the structure of the polyaniline films. However, for the dye incorporated films, since there was an addition in the synthesis of the material, peak locations shifted, and new peaks corresponding to these materials appeared. The 1 layer PANI showed compact film morphology, comparing to other PANI films, which displayed a fiber-like structure. Finally, the electrochemical properties of these thin films were studied using cyclic voltammetry (CV), chronoamperometry (CA), and electrochemical impedance spectroscopy (EIS) in

  5. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

  6. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

  7. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    DOE PAGES

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

  8. Consequence of oxidant concentration on XPS properties of chemically synthesized polythiophene thin films

    NASA Astrophysics Data System (ADS)

    Kamat, Sandip V.; Chhabra, Jasvinder; Patil, V. S.; Yadav, J. B.; Puri, R. K.; Puri, Vijaya

    2018-05-01

    The polythiophene thin films were prepared by a wellknown chemical bath deposition technique. The deposited thin films were characterized for structural morphological properties and the adhesion of these thin films were measured by direct pull off (DPO) method, the effect of oxidant concentration on these thin films also studied. The FTIR spectra of chemically deposited polythiophene thin films shows the absorption peak at 836 cm-1 which represents c-s stretching vibrations, shifts to 869 cm-1 as the oxidant concentration increases. The band at 666 cm-1 representing c-s-c ring deformation becomes sharper and appears with a shoulder peak due to increase in oxidant concentration.

  9. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, A.R.; Gruen, D.M.

    1999-05-11

    A method of preparing diamond thin films with improved field emission properties is disclosed. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display. 3 figs.

  10. Method of improving field emission characteristics of diamond thin films

    DOEpatents

    Krauss, Alan R.; Gruen, Dieter M.

    1999-01-01

    A method of preparing diamond thin films with improved field emission properties. The method includes preparing a diamond thin film on a substrate, such as Mo, W, Si and Ni. An atmosphere of hydrogen (molecular or atomic) can be provided above the already deposited film to form absorbed hydrogen to reduce the work function and enhance field emission properties of the diamond film. In addition, hydrogen can be absorbed on intergranular surfaces to enhance electrical conductivity of the diamond film. The treated diamond film can be part of a microtip array in a flat panel display.

  11. Tunable thin-film optical filters for hyperspectral microscopy

    NASA Astrophysics Data System (ADS)

    Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

    2013-02-01

    Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

  12. Characterization of Magnetron Sputtered Copper-Nickel Thin Film and Alloys

    DTIC Science & Technology

    2016-09-01

    ARL-TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys...TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys by Eugene...

  13. a Brief Survey on Basic Properties of Thin Films for Device Application

    NASA Astrophysics Data System (ADS)

    Rao, M. C.; Shekhawat, M. S.

    Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

  14. Thin film absorption characterization by focus error thermal lensing

    NASA Astrophysics Data System (ADS)

    Domené, Esteban A.; Schiltz, Drew; Patel, Dinesh; Day, Travis; Jankowska, E.; Martínez, Oscar E.; Rocca, Jorge J.; Menoni, Carmen S.

    2017-12-01

    A simple, highly sensitive technique for measuring absorbed power in thin film dielectrics based on thermal lensing is demonstrated. Absorption of an amplitude modulated or pulsed incident pump beam by a thin film acts as a heat source that induces thermal lensing in the substrate. A second continuous wave collimated probe beam defocuses after passing through the sample. Determination of absorption is achieved by quantifying the change of the probe beam profile at the focal plane using a four-quadrant detector and cylindrical lenses to generate a focus error signal. This signal is inherently insensitive to deflection, which removes noise contribution from point beam stability. A linear dependence of the focus error signal on the absorbed power is shown for a dynamic range of over 105. This technique was used to measure absorption loss in dielectric thin films deposited on fused silica substrates. In pulsed configuration, a single shot sensitivity of about 20 ppm is demonstrated, providing a unique technique for the characterization of moving targets as found in thin film growth instrumentation.

  15. Robust lanthanide emitters in polyelectrolyte thin films for photonic applications

    NASA Astrophysics Data System (ADS)

    Greenspon, Andrew S.; Marceaux, Brandt L.; Hu, Evelyn L.

    2018-02-01

    Trivalent lanthanides provide stable emission sources at wavelengths spanning the ultraviolet through the near infrared with uses in telecommunications, lighting, and biological sensing and imaging. We describe a method for incorporating an organometallic lanthanide complex within polyelectrolyte multilayers, producing uniform, optically active thin films on a variety of substrates. These films demonstrate excellent emission with narrow linewidths, stable over a period of months, even when bound to metal substrates. Utilizing different lanthanides such as europium and terbium, we are able to easily tune the resulting wavelength of emission of the thin film. These results demonstrate the suitability of this platform as a thin film emitter source for a variety of photonic applications such as waveguides, optical cavities, and sensors.

  16. Pentacene Organic Thin-Film Transistors on Flexible Paper and Glass Substrates

    DTIC Science & Technology

    2014-02-12

    FEB 2014 2. REPORT TYPE 3. DATES COVERED 00-00-2014 to 00-00-2014 4. TITLE AND SUBTITLE Pentacene organic thin - film transistors on flexible...Nanotechnology 25 (2014) 094005 (7pp) doi:10.1088/0957-4484/25/9/094005 Pentacene organic thin - film transistors on flexible paper and glass substrates Adam T...organic thin - film transistors (OTFTs) were fabricated on several types of flexible substrate: commercial photo paper, ultra-smooth specialty paper and

  17. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices

    DTIC Science & Technology

    1998-05-12

    SUBTITLE " Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices" 6. AUTHORS Michael B. Miller 5. FUNDING NUMBERS F49620-97...ii. Lü. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices Final Technical Report Performance Period: 15 August 1997...Investigator F&S. Inc.N ̂ 1. INTRODUCTION .’ 2 2. PROGRAM TASK REVIEW 2 3. BACKGROUND 4 3.1 NONLINEAR OPTICAL THIN FILMS 4 3.2 IONIC SELF

  18. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  19. Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

    NASA Astrophysics Data System (ADS)

    Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

    Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

  20. Influence of film structure on the dewetting kinetics of thin polymer films in the solvent annealing process.

    PubMed

    Zhang, Huanhuan; Xu, Lin; Lai, Yuqing; Shi, Tongfei

    2016-06-28

    On a non-wetting solid substrate, the solvent annealing process of a thin polymer film includes the swelling process and the dewetting process. Owing to difficulties in the in situ analysis of the two processes simultaneously, a quantitative study on the solvent annealing process of thin polymer films on the non-wetting solid substrate is extremely rare. In this paper, we design an experimental method by combining spectroscopic ellipsometry with optical microscopy to achieve the simultaneous in situ study. Using this method, we investigate the influence of the structure of swollen film on its dewetting kinetics during the solvent annealing process. The results show that for a thin PS film with low Mw (Mw = 4.1 kg mol(-1)), acetone molecules can form an ultrathin enriched layer between the PS film and the solid substrate during the swelling process. The presence of the acetone enriched layer accounts for the exponential kinetic behavior in the case of a thin PS film with low Mw. However, the acetone enriched layer is not observed in the case of a thin PS film with high Mw (Mw = 400 kg mol(-1)) and the slippage effect of polymer chains is valid during the dewetting process.