Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

NASA Technical Reports Server (NTRS)

Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

2018-01-01

High gain Erbium Doped Fiber Amplifiers (EDFAs), while revolutionizing optical communications, remain vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random pulses with high peak power, i.e. giant pulses. Giant pulses can damage the components in a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on conditions under which normal pulses evolve into giant pulses, and provide results on the transient effects of giant pulses on amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

NASA Technical Reports Server (NTRS)

Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

2018-01-01

High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;

A high gain wide dynamic range transimpedance amplifier for optical receivers

NASA Astrophysics Data System (ADS)

Lianxi, Liu; Jiao, Zou; Yunfei, En; Shubin, Liu; Yue, Niu; Zhangming, Zhu; Yintang, Yang

2014-01-01

As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.

Mode control in a high-gain relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors

PubMed Central

Lyu, Hongming; Lu, Qi; Huang, Yilin; Ma, Teng; Zhang, Jinyu; Wu, Xiaoming; Yu, Zhiping; Ren, Wencai; Cheng, Hui-Ming; Wu, Huaqiang; Qian, He

2015-01-01

Ever since its discovery, graphene bears great expectations in high frequency electronics due to its irreplaceably high carrier mobility. However, it has long been blamed for the weakness in generating gains, which seriously limits its pace of development. Distributed amplification, on the other hand, has successfully been used in conventional semiconductors to increase the amplifiers’ gain-bandwidth product. In this paper, distributed amplification is first applied to graphene. Transmission lines phase-synchronize paralleled graphene field-effect transistors (GFETs), combining the gain of each stage in an additive manner. Simulations were based on fabricated GFETs whose fT ranged from 8.5 GHz to 10.5 GHz and fmax from 12 GHz to 14 GHz. A simulated four-stage graphene distributed amplifier achieved up to 4 dB gain and 3.5 GHz bandwidth, which could be realized with future IC processes. A PCB level graphene distributed amplifier was fabricated as a proof of circuit concept. PMID:26634442

Digital automatic gain amplifier

NASA Technical Reports Server (NTRS)

Holley, L. D.; Ward, J. O. (Inventor)

1978-01-01

A circuit is described for adjusting the amplitude of a reference signal to a predetermined level so as to permit subsequent data signals to be interpreted correctly. The circuit includes an operational amplifier having a feedback circuit connected between an output terminal and an input terminal; a bank of relays operably connected to a plurality of resistors; and a comparator comparing an output voltage of the amplifier with a reference voltage and generating a compared signal responsive thereto. Means is provided for selectively energizing the relays according to the compared signal from the comparator until the output signal from the amplifier equals to the reference signal. A second comparator is provided for comparing the output of the amplifier with a second voltage source so as to illuminate a lamp when the output signal from the amplifier exceeds the second voltage.

Theoretical investigation of gain-clamped semiconductor optical amplifiers using the amplified spontaneous emission compensating effect

NASA Astrophysics Data System (ADS)

Jia, Xin-Hong

2006-12-01

The theoretical model on gain-clamped semiconductor optical amplifiers (GC-SOAs) based on compensating light has been constructed. Using this model, the effects of insertion position and peak reflectivity of the fiber Bragg grating (FBG) on the gain clamping and noise figure (NF) characteristics of GC-SOA are analyzed. The results show that the effect of the FBG insertion position on gain clamping is slight, but the lower NF can be obtained for input FBG-type GC-SOA; when the FBG peak wavelength is designed to close the signal wavelength, the gain clamping and NF characteristics that can be reached are better. Further study shows that, with the increased peak reflectivity of the FBG, the critical input power is broadened and the gain tends to be varied slowly; the larger bias current is helpful to raise gain and decrease the noise figure but is harmful to a gain flatness characteristic.

3D gain modeling of LMJ and NIF amplifiers

NASA Astrophysics Data System (ADS)

LeTouze, Geoffroy; Cabourdin, Olivier; Mengue, J. F.; Guenet, Mireille; Grebot, Eric; Seznec, Stephane E.; Jancaitis, Kenneth S.; Marshall, Christopher D.; Zapata, Luis E.; Erlandson, A. E.

1999-07-01

A 3D ray-trace model has been developed to predict the performance of flashlamp pumped laser amplifiers. The computer program, written in C++, includes a graphical display option using the Open Inventor library, as well as a parser and a loader allowing the user to easily model complex multi-segment amplifier systems. It runs both on a workstation cluster at LLNL, and on the T3E Cray at CEA. We will discuss how we have reduce the required computation time without changing precision by optimizing the parameters which set the discretization level of the calculation. As an example, the sample of calculation points is chosen to fit the pumping profile through the thickness of amplifier slabs. We will show the difference in pump rates with our latest model as opposed to those produced by our earlier 2.5D code AmpModel. We will also present the results of calculations which model surfaces and other 3D effects such as top and bottom refelcotr positions and reflectivity which could not be included in the 2.5D model. This new computer model also includes a full 3D calculation of the amplified spontaneous emission rate in the laser slab, as opposed to the 2.5D model which tracked only the variation in the gain across the transverse dimensions of the slab. We will present the impact of this evolution of the model on the predicted stimulated decay rate and the resulting gain distribution. Comparison with most recent AmpLab experimental result will be presented, in the different typical NIF and LMJ configurations.

Low Voltage Current-Reused Pseudo-Differential Programmable Gain Amplifier

NASA Astrophysics Data System (ADS)

Nguyen, Huy-Hieu; Lee, Jeong-Seon; Lee, Sang-Gug

This paper reports a current-reused pseudo-differential (CRPD) programmable gain amplifier (PGA) that demonstrates small size, low power, wide band, low noise, and high linearity operation with 4 control bits. Implemented in 0.18um CMOS technology, the PGA shows the gain range from -9.9 to 8.3dB with gain error of less than ±0.38dB. The IIP3, P1dB, and smallest 3-dB bandwidth are 10.5 to 27dBm, -9 to 9.5dBm, and 250MHz, respectively. The PGA occupies the chip area of 0.04mm2 and consumes only 460 µA from a 1.2V supply.

Programmable Gain Amplifiers with DC Suppression and Low Output Offset for Bioelectric Sensors

PubMed Central

Carrera, Albano; de la Rosa, Ramón; Alonso, Alonso

2013-01-01

DC-offset and DC-suppression are key parameters in bioelectric amplifiers. However, specific DC analyses are not often explained. Several factors influence the DC-budget: the programmable gain, the programmable cut-off frequencies for high pass filtering and, the low cut-off values and the capacitor blocking issues involved. A new intermediate stage is proposed to address the DC problem entirely. Two implementations were tested. The stage is composed of a programmable gain amplifier (PGA) with DC-rejection and low output offset. Cut-off frequencies are selectable and values from 0.016 to 31.83 Hz were tested, and the capacitor deblocking is embedded in the design. Hence, this PGA delivers most of the required gain with constant low output offset, notwithstanding the gain or cut-off frequency selected. PMID:24084109

Gain and noise figure enhancement of Er+3/Yb+3 co-doped fiber/Raman hybrid amplifier

NASA Astrophysics Data System (ADS)

Mahran, O.

2016-02-01

An Er/Yb co-doped fiber/Raman hybrid amplifier (HA) is proposed and studied theoretically and analytically to improve the gain and noise figure of optical amplifiers. The calculations are performed under a uniform dopant and steady-state conditions. The initial energy transfer efficiency for Er/Yb co-doped fiber amplifier (EYDFA) is introduced, while the amplified spontaneous emission (ASE) is neglected. The glass fiber used for both Er/Yb and Raman amplifiers is phosphate. Different pump powers are used for both EYDFA and RA with 1 μW input signal power, 1 m length of Er/Yb amplifier and 25 km length of Raman amplifier (RA). The proposed model is validated for Er/Yb co-doped amplifier and Raman amplifier separately by comparing the calculating results with the experimental data. A high gain and low noise figure at 200 mW Raman pump power and 500 mW Er/Yb pump power are obtained for the proposed HA as compared with the experimental results of EYDFA, Raman amplifier and the EDFA/Raman hybrid amplifier.

Fiber optic cable-based high-resolution, long-distance VGA extenders

NASA Astrophysics Data System (ADS)

Rhee, Jin-Geun; Lee, Iksoo; Kim, Heejoon; Kim, Sungjoon; Koh, Yeon-Wan; Kim, Hoik; Lim, Jiseok; Kim, Chur; Kim, Jungwon

2013-02-01

Remote transfer of high-resolution video information finds more applications in detached display applications for large facilities such as theaters, sports complex, airports, and security facilities. Active optical cables (AOCs) provide a promising approach for enhancing both the transmittable resolution and distance that standard copper-based cables cannot reach. In addition to the standard digital formats such as HDMI, the high-resolution, long-distance transfer of VGA format signals is important for applications where high-resolution analog video ports should be also supported, such as military/defense applications and high-resolution video camera links. In this presentation we present the development of a compressionless, high-resolution (up to WUXGA, 1920x1200), long-distance (up to 2 km) VGA extenders based on serialized technique. We employed asynchronous serial transmission and clock regeneration techniques, which enables lower cost implementation of VGA extenders by removing the necessity for clock transmission and large memory at the receiver. Two 3.125-Gbps transceivers are used in parallel to meet the required maximum video data rate of 6.25 Gbps. As the data are transmitted asynchronously, 24-bit pixel clock time stamp is employed to regenerate video pixel clock accurately at the receiver side. In parallel to the video information, stereo audio and RS-232 control signals are transmitted as well.

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

NASA Astrophysics Data System (ADS)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Comparison of detection limit in fiber-based conventional, amplified, and gain-clamped cavity ring-down techniques

NASA Astrophysics Data System (ADS)

Sharma, K.; Abdul Khudus, M. I. M.; Alam, S. U.; Bhattacharya, S.; Venkitesh, D.; Brambilla, G.

2018-01-01

Relative performance and detection limit of conventional, amplified, and gain-clamped cavity ring-down techniques (CRDT) in all-fiber configurations are compared experimentally for the first time. Refractive index measurement using evanescent field in tapered fibers is used as a benchmark for the comparison. The systematic optimization of a nested-loop configuration in gain-clamped CRDT is also discussed, which is crucial for achieving a constant gain in a CRDT experiment. It is found that even though conventional CRDT has the lowest standard error in ring-down time (Δτ), the value of ring-down time (τ) is very small, thus leading to poor detection limit. Amplified CRDT provides an improvement in τ, albeit with two orders of magnitude higher Δτ due to amplifier noise. The nested-loop configuration in gain-clamped CRDT helps in reducing Δτ by an order of magnitude as compared to amplified CRDT whilst retaining the improvement in τ. A detection limit of 1 . 03 × 10-4 RIU at refractive index of 1.322 with a 3 mm long and 4.5 μm diameter tapered fiber is demonstrated with the gain-clamped CRDT.

An ultra-high gain and efficient amplifier based on Raman amplification in plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vieux, G.; Cipiccia, S.; Grant, D. W.

Raman amplification arising from the excitation of a density echelon in plasma could lead to amplifiers that significantly exceed current power limits of conventional laser media. Here we show that 1–100 J pump pulses can amplify picojoule seed pulses to nearly joule level. The extremely high gain also leads to significant amplification of backscattered radiation from “noise”, arising from stochastic plasma fluctuations that competes with externally injected seed pulses, which are amplified to similar levels at the highest pump energies. The pump energy is scattered into the seed at an oblique angle with 14 J sr -1, and net gainsmore » of more than eight orders of magnitude. The maximum gain coefficient, of 180 cm -1, exceeds high-power solid-state amplifying media by orders of magnitude. The observation of a minimum of 640 J sr -1 directly backscattered from noise, corresponding to ≈10% of the pump energy in the observation solid angle, implies potential overall efficiencies greater than 10%.« less

An ultra-high gain and efficient amplifier based on Raman amplification in plasma

DOE PAGES

Vieux, G.; Cipiccia, S.; Grant, D. W.; ...

2017-05-25

Raman amplification arising from the excitation of a density echelon in plasma could lead to amplifiers that significantly exceed current power limits of conventional laser media. Here we show that 1–100 J pump pulses can amplify picojoule seed pulses to nearly joule level. The extremely high gain also leads to significant amplification of backscattered radiation from “noise”, arising from stochastic plasma fluctuations that competes with externally injected seed pulses, which are amplified to similar levels at the highest pump energies. The pump energy is scattered into the seed at an oblique angle with 14 J sr -1, and net gainsmore » of more than eight orders of magnitude. The maximum gain coefficient, of 180 cm -1, exceeds high-power solid-state amplifying media by orders of magnitude. The observation of a minimum of 640 J sr -1 directly backscattered from noise, corresponding to ≈10% of the pump energy in the observation solid angle, implies potential overall efficiencies greater than 10%.« less

Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

PubMed

Ming Gu; Chakrabartty, Shantanu

2014-06-01

This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

Theory and Simulation of Gain-Guided Noncollinear Modes in Chirped Quasi-Phase-Matched Optical Parametric Amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charbonneau-Lefort, Mathieu; Afeyan, Bedros; Fejer, Martin

Chirped quasi-phase-matched (QPM) gratings offer essentially constant gain over wide bandwidths, making them promising candidates for short-pulse optical parametric amplifiers. However, experiments have shown that high-gain non-collinear processes exist in spite of the dephasing caused by the non-uniformity of the QPM grating and compete with the desired collinear broadband gain of the amplifier. In this paper, these non-collinear gain-guided modes are investigated numerically and analytically in a model that includes longitudinal non-uniformity of the phase-matching profile, lateral localization of the pump beam and non-collinear propagation of the interacting waves.

Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

NASA Astrophysics Data System (ADS)

Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

2011-05-01

The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

Optical speedup at transparency of the gain recovery in semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Hessler, T. P.; Dupertuis, M.-A.; Deveaud, B.; Emery, J.-Y.; Dagens, B.

2002-10-01

Experimental demonstration of optical speedup at transparency (OSAT) has been performed on a 1 mm long semiconductor optical amplifiers (SOA). OSAT is a recently proposed scheme that decreases the recovery time of an SOA while maintaining the available gain. It is achieved by externally injecting into the SOA the beam of a separate high power laser at energies around the transparency point. Even though the experimental conditions were not optimal, a beam of 100 mW decreases the recovery time by a third when it is injected in the vicinity of the material transparency point of the device. This acceleration of the device response without detrimental reduction of the gain is found to be effective over a broad wavelength window of about 20 nm around transparency. The injection of the accelerating beam into the gain region is a less efficient solution not only because the gain is then strongly diminished but also because speeding is reduced. This originates from the reduction of the amplified spontaneous emission power in the device, which counterbalances the speeding capabilities of the external laser beam. Another advantage of the OSAT scheme is realized in relatively long SOAs, which suffer from gain overshoot under strong current injection. Simulations show that OSAT decreases the gain overshoot, which should enable us to use OSAT to further speedup the response of long SOAs.

Experimental sub-Rayleigh resolution by an unseeded high-gain optical parametric amplifier for quantum lithography

NASA Astrophysics Data System (ADS)

Sciarrino, Fabio; Vitelli, Chiara; de Martini, Francesco; Glasser, Ryan; Cable, Hugo; Dowling, Jonathan P.

2008-01-01

Quantum lithography proposes to adopt entangled quantum states in order to increase resolution in interferometry. In the present paper we experimentally demonstrate that the output of a high-gain optical parametric amplifier can be intense yet exhibits quantum features, namely, sub-Rayleigh fringes, as proposed by [Agarwal , Phys. Rev. Lett. 86, 1389 (2001)]. We investigate multiphoton states generated by a high-gain optical parametric amplifier operating with a quantum vacuum input for gain values up to 2.5. The visibility has then been increased by means of three-photon absorption. The present paper opens interesting perspectives for the implementation of such an advanced interferometrical setup.

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

PubMed

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

A new evolutionary variant of the streptogramin A resistance protein, Vga(A)LC, from Staphylococcus haemolyticus with shifted substrate specificity towards lincosamides.

PubMed

Novotna, G; Janata, J

2006-12-01

We found a new variant of the streptogramin A resistance gene, vga(A)LC, in clinical isolates of Staphylococcus haemolyticus resistant to lincomycin and clindamycin but susceptible to erythromycin and in which no relevant lincosamide resistance gene was detected. The gene vga(A)LC, differing from the gene vga(A) at the protein level by seven amino acid substitutions, was present exclusively in S. haemolyticus strains resistant to both lincosamides and streptogramin A (LS(A) phenotype). Antibiotic resistance profiles of the ATP-binding cassette (ABC) proteins Vga(A)(LC) and Vga(A) in the antibiotic-susceptible host S. aureus RN4220 were compared. It was shown that Vga(A)LC conferred resistance to both lincosamides and streptogramin A, while Vga(A) conferred significant resistance to streptogramin A only. Detailed analysis of the seven amino acid substitutions, distinguishing the two related ABC proteins with different substrate specificities, identified the substrate-recognizing site: four clustered substitutions (L212S, G219V, A220T, and G226S) in the spacer between the two ATP-binding cassettes altered the substrate specificity and constituted the lincosamide-streptogramin A resistance phenotype. A transport experiment with radiolabeled lincomycin demonstrated that the mechanism of lincosamide resistance in S. haemolyticus was identical to that of the reported macrolide-streptogramin B resistance conferred by Msr(A).

A New Evolutionary Variant of the Streptogramin A Resistance Protein, Vga(A)LC, from Staphylococcus haemolyticus with Shifted Substrate Specificity towards Lincosamides▿

PubMed Central

Novotna, G.; Janata, J.

2006-01-01

We found a new variant of the streptogramin A resistance gene, vga(A)LC, in clinical isolates of Staphylococcus haemolyticus resistant to lincomycin and clindamycin but susceptible to erythromycin and in which no relevant lincosamide resistance gene was detected. The gene vga(A)LC, differing from the gene vga(A) at the protein level by seven amino acid substitutions, was present exclusively in S. haemolyticus strains resistant to both lincosamides and streptogramin A (LSA phenotype). Antibiotic resistance profiles of the ATP-binding cassette (ABC) proteins Vga(A)LC and Vga(A) in the antibiotic-susceptible host S. aureus RN4220 were compared. It was shown that Vga(A)LC conferred resistance to both lincosamides and streptogramin A, while Vga(A) conferred significant resistance to streptogramin A only. Detailed analysis of the seven amino acid substitutions, distinguishing the two related ABC proteins with different substrate specificities, identified the substrate-recognizing site: four clustered substitutions (L212S, G219V, A220T, and G226S) in the spacer between the two ATP-binding cassettes altered the substrate specificity and constituted the lincosamide-streptogramin A resistance phenotype. A transport experiment with radiolabeled lincomycin demonstrated that the mechanism of lincosamide resistance in S. haemolyticus was identical to that of the reported macrolide-streptogramin B resistance conferred by Msr(A). PMID:17015629

Common base amplifier with 7 - dB gain at 176 GHz in InP mesa DHBT technology

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Paidi, V.; Griffith, Z.; Dahlstrom, M.; Wei, Y.; Urteaga, M.; Rodell, M. J. W.; Fung, A.

2004-01-01

We report a single stage tunded amplifier that exhibits 7 dB small signal gain at 176 GHz. Common Base topology is chosen as it has the best maximum stable gain (MSG) in this frequency band when compared to common emitter and common collector topologies. The amplifiers are designed and fabricated in InP mesa double heterojunction bipolar transistor (DHBT) technology.

Gain-clamped semiconductor optical amplifiers based on compensating light: Theoretical model and performance analysis

NASA Astrophysics Data System (ADS)

Jia, Xin-Hong; Wu, Zheng-Mao; Xia, Guang-Qiong

2006-12-01

It is well known that the gain-clamped semiconductor optical amplifier (GC-SOA) based on lasing effect is subject to transmission rate restriction because of relaxation oscillation. The GC-SOA based on compensating effect between signal light and amplified spontaneous emission by combined SOA and fiber Bragg grating (FBG) can be used to overcome this problem. In this paper, the theoretical model on GC-SOA based on compensating light has been constructed. The numerical simulations demonstrate that good gain and noise figure characteristics can be realized by selecting reasonably the FBG insertion position, the peak reflectivity of FBG and the biasing current of GC-SOA.

High Gain and Wide Range Time Amplifier Using Inverter Delay Chain in SR Latches

NASA Astrophysics Data System (ADS)

Lee, Jaejun; Lee, Sungho; Song, Yonghoon; Nam, Sangwook

This paper presents a time amplifier design that improves time resolution using an inverter chain delay in SR latches. Compared with the conventional design, the proposed time amplifier has better characteristics such as higher gain, wide range, and small die size. It is implemented using 0.13µm standard CMOS technology and the experimental results agree well with the theory.

Gain measurement of a CuBr laser by means of modified amplified spontaneous emission

NASA Astrophysics Data System (ADS)

Chan, W. C.; Liu, H. P.; Yen, S. H.; Chen, W. Y.; Lin, Y. H.; Chen, W. C.

1990-05-01

A modified amplified spontaneous emission technique has been introduced to measure the radial distributions of the gain and the saturation energy density of the output of a double-discharge pulsed CuBr laser. An asymmetric distribution of the gain was obtained. With the laser tube temperature at 420 °C, the peak value of the gain and the saturation energy density are 70 db/m and 85 μJ/cm3, respectively.

Measurements of the Low Frequency Gain Fluctuations of a 30 GHz High-Electron-Mobility-Transistor Cryogenic Amplifier

NASA Technical Reports Server (NTRS)

Jarosik, Norman

1994-01-01

Low frequency gain fluctuations of a 30 GHz cryogenic HEMT amplifier have been measured with the input of the amplifier connected to a 15 K load. Effects of fluctuations of other components of the test set-up were eliminated by use of a power-power correlation technique. Strong correlation between output power fluctuations of the amplifier and drain current fluctuations of the transistors comprising the amplifier are observed. The existence of these correlations introduces the possibility of regressing some of the excess noise from the HEMT amplifier's output using the measured drain currents.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Fung, KingMan; Pukala, David M.; Kangaslahti, Pekka P.; Lai, Richard; Ferreira, Linda

2012-01-01

JPL has measured and calibrated a WR2.2 waveguide wafer probe from GGB Industries in order to allow for measurement of circuits in the 325-500 GHz range. Circuits were measured, and one of the circuits exhibited 10 dB of gain at 475 GHz. The MMIC circuit was fabricated at Northrop Grumman Corp. (NGC) as part of a NASA Innovative Partnerships Program, using NGC s 35-nm-gatelength InP HEMT process technology. The chip utilizes three stages of HEMT amplifiers, each having two gate fingers of 10 m in width. The circuits use grounded coplanar waveguide topology on a 50- m-thick substrate with through substrate vias. Broadband matching is achieved with coplanar waveguide transmission lines, on-chip capacitors, and open stubs. When tested with wafer probing, the chip exhibited 10 dB of gain at 475 GHz, with over 9 dB of gain from 445-490 GHz. Low-noise amplifiers in the 400-500 GHz range are useful for astrophysics receivers and earth science remote sensing instruments. In particular, molecular lines in the 400-500 GHz range include the CO 4-3 line at 460 GHz, and the CI fine structure line at 492 GHz. Future astrophysics heterodyne instruments could make use of high-gain, low-noise amplifiers such as the one described here. In addition, earth science remote sensing instruments could also make use of low-noise receivers with MMIC amplifier front ends. Present receiver technology typically employs mixers for frequency down-conversion in the 400-500 GHz band. Commercially available mixers have typical conversion loss in the range of 7-10 dB with noise figure of 1,000 K. A low-noise amplifier placed in front of such a mixer would have 10 dB of gain and lower noise figure, particularly if cooled to low temperature. Future work will involve measuring the noise figure of this amplifier.

Micro EEG/ECG signal’s chopper-stabilization amplifying chip for novel dry-contact electrode

NASA Astrophysics Data System (ADS)

Sun, Jianhui; Wang, Chunxing; Wang, Gongtang; Wang, Jinhui; Hua, Qing; Cheng, Chuanfu; Cai, Xinxia; Yin, Tao; Yu, Yang; Yang, Haigang; Li, Dengwang

2017-02-01

Facing the body’s EEG (electroencephalograph, 0.5–100 Hz, 5–100 μV) and ECG’s (electrocardiogram, < 100 {Hz}, 0.01–5 mV) micro signal detection requirement, this paper develops a pervasive application micro signal detection ASIC chip with the chopping modulation/demodulation method. The chopper-stabilization circuit with the RRL (ripple reduction loop) circuit is to suppress the ripple voltage, which locates at the single-stage amplifier’s outputting terminal. The single-stage chopping core’s noise has been suppressed too, and it is beneficial for suppressing noises of post-circuit. The chopping core circuit uses the PFB (positive feedback loop) to increase the inputting resistance, and the NFB (negative feedback loop) to stabilize the 40 dB intermediate frequency gain. The cascaded switch-capacitor sample/hold circuit has been used for deleting spike noises caused by non-ideal MOS switches, and the VGA/BPF (voltage gain amplifier/band pass filter) circuit is used to tune the chopper system’s gain/bandwidth digitally. Assisted with the designed novel dry-electrode, the real test result of the chopping amplifying circuit gives some critical parameters: 8.1 μW/channel, 0.8 μVrms (@band-width = 100 Hz), 4216–11220 times digitally tuning gain range, etc. The data capture system uses the NI CO’s data capturing DAQmx interface, and the captured micro EEG/ECG’s waves are real-time displayed with the PC-Labview. The proposed chopper system is a unified EEG/ECG signal’s detection instrument and has a critical real application value. Project supported by the National Natural Science Foundation of China (Nos. 61527815, 31500800, 61501426, 61471342), the National Key Basic Research Plan (No. 2014CB744600), the Beijing Science and Technology Plan (No. Z141100000214002), and the Chinese Academy of Sciences’ Key Project (No. KJZD-EW-L11-2).

LOGARITHMIC AMPLIFIER

DOEpatents

De Shong, J.A. Jr.

1957-12-31

A logarithmic current amplifier circuit having a high sensitivity and fast response is described. The inventor discovered the time constant of the input circuit of a system utilizing a feedback amplifier, ionization chamber, and a diode, is inversely proportional to the input current, and that the amplifier becomes unstable in amplifying signals in the upper frequency range when the amplifier's forward gain time constant equals the input circuit time constant. The described device incorporates impedance networks having low frequency response characteristic at various points in the circuit to change the forward gain of the amplifler at a rate of 0.7 of the gain magnitude for every two times increased in frequency. As a result of this improvement, the time constant of the input circuit is greatly reduced at high frequencies, and the amplifier response is increased.

Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamida, B A; Cheng, X S; Harun, S W

A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achievedmore » with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.« less

Microsecond gain-switched master oscillator power amplifier (1958 nm) with high pulse energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke Yin; Weiqiang Yang; Bin Zhang

2014-02-28

An all-fibre master oscillator power amplifier (MOPA) emitting high-energy pulses at 1958 nm is presented. The seed laser is a microsecond gain-switched thulium-doped fibre laser (TDFL) pumped with a commercial 1550-nm pulsed fibre laser. The TDFL operates at a repetition rate f in the range of 10 to 100 kHz. The two-stage thulium-doped fibre amplifier is built to scale the energy of the pulses generated by the seed laser. The maximum output pulse energy higher than 0.5 mJ at 10 kHz is achieved which is comparable with the theoretical maximum extractable pulse energy. The slope efficiency of the second stagemore » amplifier with respect to the pump power is 30.4% at f = 10 kHz. The wavelength of the output pulse laser is centred near 1958 nm at a spectral width of 0.25 nm after amplification. Neither nonlinear effects nor significant amplified spontaneous emission (ASE) is observed in the amplification experiments. (lasers)« less

Uncooled 17 μm ¼ VGA IRFPA development for compact and low power systems

NASA Astrophysics Data System (ADS)

Robert, P.; Tissot, J.; Pochic, D.; Gravot, V.; Bonnaire, F.; Clerambault, H.; Durand, A.; Tinnes, S.

2012-11-01

The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop ¼ VGA IRFPA formats with 17μm pixel-pitch to enable the development of small power, small weight (SWAP) and high performance IR systems. ROIC architecture will be described where innovations are widely on-chip implemented to enable an easier operation by the user. The detector configuration (integration time, windowing, gain, scanning direction…), is driven by a standard I²C link. Like most of the visible arrays, the detector adopts the HSYNC/VSYNC free-run mode of operation driven with only one master clock (MC) supplied to the ROIC which feeds back pixel, line and frame synchronizations. On-chip PROM memory for customer operational condition storage is available for detector characteristics. Low power consumption has been taken into account and less than 60 mW is possible in analog mode at 60 Hz and < 175 mW in digital mode (14 bits). A wide electrical dynamic range (2.4V) is maintained despite the use of advanced CMOS node. The specific appeal of this unit lies in the high uniformity and easy operation it provides. The reduction of the pixel-pitch turns this TEC-less ¼ VGA array into a product well adapted for high resolution and compact systems. NETD of 35 mK and thermal time constant of 10 ms have been measured leading to 350 mK.ms figure of merit. We insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity and pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node associated with advanced packaging technique, paves the way to compact low power system.

Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2

NASA Astrophysics Data System (ADS)

Deng, Quanrong; Han, Xiaoping; Gao, Yun; Shao, Guosheng

2012-07-01

A first attempt has been made to study the effect of codoping of transition metal and sp metal on the electronic structure and associated optical properties of TiO2, through V-Ga codoped thin films. V-Ga codoped rutile TiO2 films were fabricated on fused quartz substrates using pulsed laser ablation, followed by heat treatment at high temperatures. Gigantic redshift in the optical absorption edge was observed in V-Ga co-doped TiO2 materials, from UV to infrared region with high absorption coefficient. Through combined structural characterization and theoretical modeling, this is attributed to the p-d hybridization between the two metals. This leads to additional energy bands to overlap with the minimum of the conduction band, leading to remarkably narrowed band gap free of mid-gap states. The direct-gap of the co-doped phase is key to the remarkably high optical absorption coefficient of the coped titania.

High-gain (43 dB), high-power (40 W), highly efficient multipass amplifier at 995 nm in Yb:LiYF4

NASA Astrophysics Data System (ADS)

Manni, Jeffrey; Harris, Dennis; Fan, Tso Yee

2018-06-01

A simple implementation of a multipass amplifier along with the use of a cryogenic Yb:LiYF4 (YLF) gain medium has enabled the demonstration of a bulk amplifier with an unprecedented combination of large-signal gain (43 dB), efficiency (>50% optical), average output power (40 W) and a near-diffraction-limited output beam.

Effect of gain contouring in erbium-doped fiber amplifiers on bit error rate performance of wavelength-division multiplexing-based radio over fiber links

NASA Astrophysics Data System (ADS)

Jose, Tony; Narayanan, Vijayakumar

2018-03-01

Radio over fiber (RoF) systems use a large number of base stations (BSs) and a number of central stations (CSs), which are interlinked together to form the network. RoF systems use multiple wavelengths for communication between CSs or between CSs and BSs to facilitate the huge amount of data traffic due to the multiple services for a large number of users. When erbium-doped fiber amplifiers (EDFAs) are used as amplifiers in such wavelength-division multiplexed systems, the nonuniform gain spectrum of EDFAs causes instability to some of the channels while providing faithful amplification to other channels. To avoid this inconsistency, the gain spectrum of the amplifier needs to be uniform along the whole usable range of wavelengths. A gain contouring technique is proposed to provide uniform gain to all channels irrespective of wavelength. Optical add/drop multiplexers (OADMs) and different lengths of erbium-doped fibers are used to create such a gain contouring mechanism in the optical domain itself. The effect of a cascade of nonuniform gain amplifiers is studied, and the proposed system mitigates the adverse effects caused due to nonuniform gain-induced channel instability effectively.

Laser amplifier chain

DOEpatents

Hackel, R.P.

1992-10-20

A laser amplifier chain has a plurality of laser amplifiers arranged in a chain to sequentially amplify a low-power signal beam to produce a significantly higher-power output beam. Overall efficiency of such a chain is improved if high-gain, low efficiency amplifiers are placed on the upstream side of the chain where only a very small fraction of the total pumped power is received by the chain and low-gain, high-efficiency amplifiers are placed on the downstream side where a majority of pumping energy is received by the chain. 6 figs.

Laser amplifier chain

DOEpatents

Hackel, Richard P.

1992-01-01

A laser amplifier chain has a plurality of laser amplifiers arranged in a chain to sequentially amplify a low-power signal beam to produce a significantly higher-power output beam. Overall efficiency of such a chain is improved if high-gain, low efficiency amplifiers are placed on the upstream side of the chain where only a very small fraction of the total pumped power is received by the chain and low-gain, high-efficiency amplifiers are placed on the downstream side where a majority of pumping energy is received by the chain.

Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product

NASA Astrophysics Data System (ADS)

Park, Sehoon; Du, Xuan-Quang; Grözing, Markus; Berroth, Manfred

2017-09-01

This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.

Laser amplifier and method

DOEpatents

Backus, S.; Kapteyn, H.C.; Murnane, M.M.

1997-07-01

Laser amplifiers and methods for amplifying a laser beam are disclosed. A representative embodiment of the amplifier comprises first and second curved mirrors, a gain medium, a third mirror, and a mask. The gain medium is situated between the first and second curved mirrors at the focal point of each curved mirror. The first curved mirror directs and focuses a laser beam to pass through the gain medium to the second curved mirror which reflects and recollimates the laser beam. The gain medium amplifies and shapes the laser beam as the laser beam passes therethrough. The third mirror reflects the laser beam, reflected from the second curved mirror, so that the laser beam bypasses the gain medium and return to the first curved mirror, thereby completing a cycle of a ring traversed by the laser beam. The mask defines at least one beam-clipping aperture through which the laser beam passes during a cycle. The gain medium is pumped, preferably using a suitable pumping laser. The laser amplifier can be used to increase the energy of continuous-wave or, especially, pulsed laser beams including pulses of femtosecond duration and relatively high pulse rate. 7 figs.

Laser amplifier and method

DOEpatents

Backus, Sterling; Kapteyn, Henry C.; Murnane, Margaret M.

1997-01-01

Laser amplifiers and methods for amplifying a laser beam are disclosed. A representative embodiment of the amplifier comprises first and second curved mirrors, a gain medium, a third mirror, and a mask. The gain medium is situated between the first and second curved mirrors at the focal point of each curved mirror. The first curved mirror directs and focuses a laser beam to pass through the gain medium to the second curved mirror which reflects and recollimates the laser beam. The gain medium amplifies and shapes the laser beam as the laser beam passes therethough. The third mirror reflects the laser beam, reflected from the second curved mirror, so that the laser beam bypasses the gain medium and return to the first curved mirror, thereby completing a cycle of a ring traversed by the laser beam. The mask defines at least one beam-clipping aperture through which the laser beam passes during a cycle. The gain medium is pumped, preferably using a suitable pumping laser. The laser amplifier can be used to increase the energy of continuous-wave or, especially, pulsed laser beams including pulses of femtosecond duration and relatively high pulse rate.

Side-polished fiber based gain-flattening filter for erbium doped fiber amplifiers

NASA Astrophysics Data System (ADS)

Varshney, R. K.; Singh, A.; Pande, K.; Pal, B. P.

2007-03-01

A simple and accurate novel normal mode analysis has been developed to take into account the effect of the non-uniform depth of polishing in the study of the transmission characteristics of optical waveguide devices based on loading of a side-polished fiber half-coupler with a multimode planar waveguide. We apply the same to design and fabricate a gain-flattening filter suitable for fiber amplifiers. The wavelength dependent filtering action of the overall device could demonstrate flattening of an EDFA gain spectrum within ±0.7 dB over a bandwidth of 30 nm in the C-band. Results obtained by the present analysis agree very well with our experimental results. This present analysis should be very useful in the accurate design and analysis of any SPF-MMOW device/component including side-polished fiber based sensors.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots.

PubMed

Geiregat, Pieter; Houtepen, Arjan J; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

NASA Astrophysics Data System (ADS)

Geiregat, Pieter; Houtepen, Arjan J.; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

PubMed

Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

2014-01-01

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

Efficient design of gain-flattened multi-pump Raman fiber amplifiers using least squares support vector regression

NASA Astrophysics Data System (ADS)

Chen, Jing; Qiu, Xiaojie; Yin, Cunyi; Jiang, Hao

2018-02-01

An efficient method to design the broadband gain-flattened Raman fiber amplifier with multiple pumps is proposed based on least squares support vector regression (LS-SVR). A multi-input multi-output LS-SVR model is introduced to replace the complicated solving process of the nonlinear coupled Raman amplification equation. The proposed approach contains two stages: offline training stage and online optimization stage. During the offline stage, the LS-SVR model is trained. Owing to the good generalization capability of LS-SVR, the net gain spectrum can be directly and accurately obtained when inputting any combination of the pump wavelength and power to the well-trained model. During the online stage, we incorporate the LS-SVR model into the particle swarm optimization algorithm to find the optimal pump configuration. The design results demonstrate that the proposed method greatly shortens the computation time and enhances the efficiency of the pump parameter optimization for Raman fiber amplifier design.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

1995-01-01

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

1995-07-25

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

Segmented amplifier configurations for laser amplifier

DOEpatents

Hagen, Wilhelm F.

1979-01-01

An amplifier system for high power lasers, the system comprising a compact array of segments which (1) preserves high, large signal gain with improved pumping efficiency and (2) allows the total amplifier length to be shortened by as much as one order of magnitude. The system uses a three dimensional array of segments, with the plane of each segment being oriented at substantially the amplifier medium Brewster angle relative to the incident laser beam and with one or more linear arrays of flashlamps positioned between adjacent rows of amplifier segments, with the plane of the linear array of flashlamps being substantially parallel to the beam propagation direction.

Multistaged stokes injected Raman capillary waveguide amplifier

DOEpatents

Kurnit, Norman A.

1980-01-01

A multistaged Stokes injected Raman capillary waveguide amplifier for providing a high gain Stokes output signal. The amplifier uses a plurality of optically coupled capillary waveguide amplifiers and one or more regenerative amplifiers to increase Stokes gain to a level sufficient for power amplification. Power amplification is provided by a multifocused Raman gain cell or a large diameter capillary waveguide. An external source of CO.sub.2 laser radiation can be injected into each of the capillary waveguide amplifier stages to increase Raman gain. Devices for injecting external sources of CO.sub.2 radiation include: dichroic mirrors, prisms, gratings and Ge Brewster plates. Alternatively, the CO.sub.2 input radiation to the first stage can be coupled and amplified between successive stages.

Easy to use uncooled ¼ VGA 17 µm FPA development for high performance compact and low-power systems

NASA Astrophysics Data System (ADS)

Robert, P.; Tissot, JL.; Pochic, D.; Gravot, V.; Bonnaire, F.; Clerambault, H.; Durand, A.; Tinnes, S.

2012-06-01

The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop ¼ VGA IRFPA formats with 17μm pixel-pitch to enable the development of small power, small weight (SWAP) and high performance IR systems. ROIC architecture will be described where innovations are widely on-chip implemented to enable an easier operation by the user. The detector configuration (integration time, windowing, gain, scanning direction...), is driven by a standard I²C link. Like most of the visible arrays, the detector adopts the HSYNC/VSYNC free-run mode of operation driven with only one master clock (MC) supplied to the ROIC which feeds back pixel, line and frame synchronizations. On-chip PROM memory for customer operational condition storage is available for detector characteristics. Low power consumption has been taken into account and less than 60 mW is possible in analog mode at 60 Hz and < 175 mW in digital mode (14 bits). A wide electrical dynamic range (2.4V) is maintained despite the use of advanced CMOS node. The specific appeal of this unit lies in the high uniformity and easy operation it provides. The reduction of the pixel-pitch turns this TEC-less ¼ VGA array into a product well adapted for high resolution and compact systems. NETD of 35 mK and thermal time constant of 10 ms have been measured leading to 350 mK.ms figure of merit. We insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity and pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node associated with advanced packaging technique, paves the way to compact low power system.

Dressed Gain from the Parametrically Amplified Four-Wave Mixing Process in an Atomic Vapor.

PubMed

Zhang, Zhaoyang; Wen, Feng; Che, Junling; Zhang, Dan; Li, Changbiao; Zhang, Yanpeng; Xiao, Min

2015-10-14

With a forward cone emitting from the strong pump laser in a thermal rubidium atomic vapor, we investigate the non-degenerate parametrically amplified four-wave mixing (PA-FWM) process with dressing effects in a three-level "double-Λ" configuration both theoretically and experimentally. By seeding a weak probe field into the Stokes or anti-Stokes channel of the FWM, the gain processes are generated in the bright twin beams which are called conjugate and probe beams, respectively. However, the strong dressing effect of the pump beam will dramatically affect the gain factors both in the probe and conjugate channels, and can inevitably impose an influence on the quantum effects such as entangled degree and the quantum noise reduction between the two channels. We systematically investigate the intensity evolution of the dressed gain processes by manipulating the atomic density, the Rabi frequency and the frequency detuning. Such dressing effects are also visually evidenced by the observation of Autler-Townes splitting of the gain peaks. The investigation can contribute to the development of quantum information processing and quantum communications.

Dressed Gain from the Parametrically Amplified Four-Wave Mixing Process in an Atomic Vapor

NASA Astrophysics Data System (ADS)

Zhang, Zhaoyang; Wen, Feng; Che, Junling; Zhang, Dan; Li, Changbiao; Zhang, Yanpeng; Xiao, Min

2015-10-01

With a forward cone emitting from the strong pump laser in a thermal rubidium atomic vapor, we investigate the non-degenerate parametrically amplified four-wave mixing (PA-FWM) process with dressing effects in a three-level “double-Λ” configuration both theoretically and experimentally. By seeding a weak probe field into the Stokes or anti-Stokes channel of the FWM, the gain processes are generated in the bright twin beams which are called conjugate and probe beams, respectively. However, the strong dressing effect of the pump beam will dramatically affect the gain factors both in the probe and conjugate channels, and can inevitably impose an influence on the quantum effects such as entangled degree and the quantum noise reduction between the two channels. We systematically investigate the intensity evolution of the dressed gain processes by manipulating the atomic density, the Rabi frequency and the frequency detuning. Such dressing effects are also visually evidenced by the observation of Autler-Townes splitting of the gain peaks. The investigation can contribute to the development of quantum information processing and quantum communications.

PULSE AMPLIFIER

DOEpatents

Johnstone, C.W.

1958-06-17

The improvement of pulse amplifiers used with scintillation detectors is described. The pulse amplifier circuit has the advantage of reducing the harmful effects of overloading cause by large signal inputs. In general the pulse amplifier circuit comprises two amplifier tubes with the input pulses applied to one amplifier grid and coupled to the second amplifier tube through a common cathode load. The output of the second amplifier is coupled from the plate circuit to a cathode follower tube grid and a diode tube in connected from grid to cathode of the cathode follower tube. Degenerative feedback is provided in the second amplifier by coupling a signal from the cathode follower cathode to the second amplifier grid. The circuit proqides moderate gain stability, and overload protection for subsequent pulse circuits.

Novel design of inherently gain-flattened discrete highly nonlinear photonic crystal fiber Raman amplifier and dispersion compensation using a single pump in C-band.

PubMed

Varshney, Shailendra; Fujisawa, Takeshi; Saitoh, Kunimasa; Koshiba, Masanori

2005-11-14

In this paper, we report, for the first time, an inherently gain-flattened discrete highly nonlinear photonic crystal fiber (HNPCF) Raman amplifier (HNPCF-RA) design which shows 13.7 dB of net gain (with +/-0.85-dB gain ripple) over 28-nm bandwidth. The wavelength dependent leakage loss property of HNPCF is used to flatten the Raman gain of the amplifier module. The PCF structural design is based on W-shaped refractive index profile where the fiber parameters are well optimized by homely developed genetic algorithm optimization tool integrated with an efficient vectorial finite element method (V-FEM). The proposed fiber design has a high Raman gain efficiency of 4.88 W(-1) . km(-1) at a frequency shift of 13.1 THz, which is precisely evaluated through V-FEM. Additionally, the designed module, which shows ultra-wide single mode operation, has a slowly varying negative dispersion coefficient (-107.5 ps/nm/km at 1550 nm) over the operating range of wavelengths. Therefore, our proposed HNPCF-RA module acts as a composite amplifier with dispersion compensator functionality in a single component using a single pump.

A 14-bit 40-MHz analog front end for CCD application

NASA Astrophysics Data System (ADS)

Jingyu, Wang; Zhangming, Zhu; Shubin, Liu

2016-06-01

A 14-bit, 40-MHz analog front end (AFE) for CCD scanners is analyzed and designed. The proposed system incorporates a digitally controlled wideband variable gain amplifier (VGA) with nearly 42 dB gain range, a correlated double sampler (CDS) with programmable gain functionality, a 14-bit analog-to-digital converter and a programmable timing core. To achieve the maximum dynamic range, the VGA proposed here can linearly amplify the input signal in a gain range from -1.08 to 41.06 dB in 6.02 dB step with a constant bandwidth. A novel CDS takes image information out of noise, and further amplifies the signal accurately in a gain range from 0 to 18 dB in 0.035 dB step. A 14-bit ADC is adopted to quantify the analog signal with optimization in power and linearity. An internal timing core can provide flexible timing for CCD arrays, CDS and ADC. The proposed AFE was fabricated in SMIC 0.18 μm CMOS process. The whole circuit occupied an active area of 2.8 × 4.8 mm2 and consumed 360 mW. When the frequency of input signal is 6.069 MHz, and the sampling frequency is 40 MHz, the signal to noise and distortion (SNDR) is 70.3 dB, the effective number of bits is 11.39 bit. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033), the National High-Tech Program of China (No. 2013AA014103), and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201302).

[Design of a pulse oximeter used to low perfusion and low oxygen saturation].

PubMed

Tan, Shuangping; Ai, Zhiguang; Yang, Yuxing; Xie, Qingguo

2013-05-01

This paper presents a new pulse oximeter used to low perfusion at 0.125% and wide oxygen saturation range from 35% to 100%. In order to acquire the best PPG signals, the variable gain amplifier(VGA) is adopted in hardware. The self-developed auto-correlation modeling method is adopted in software and it can extract pulse wave from low perfusion signals and remove motion artifacts partly.

All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

NASA Astrophysics Data System (ADS)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-05-01

Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

Experimental design of laminar proportional amplifiers

NASA Technical Reports Server (NTRS)

Hellbaum, R. F.

1976-01-01

An experimental program was initiated at Langley Research Center to study the effects of various parameters on the design of laminar proportional beam deflection amplifiers. Matching and staging of amplifiers to obtain high-pressure gain was also studied. Variable parameters were aspect ratio, setback, control length, receiver distance, receiver width, width of center vent, and bias pressure levels. Usable pressure gains from 4 to 19 per stage can now be achieved, and five amplifiers were staged together to yield pressure gains up to 2,000,000.

An AC modulated near infrared gain calibration system for a "Violin-Mode" transimpedance amplifier, intended for advanced LIGO suspensions.

PubMed

Lockerbie, N A; Tokmakov, K V

2016-07-01

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a "tall-thin" rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse "Violin-Mode" vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor's DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor's more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz-300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m(-1) was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC/DC transimpedance gain

Signal Digitizer and Cross-Correlation Application Specific Integrated Circuit

NASA Technical Reports Server (NTRS)

Baranauskas, Gytis (Inventor); Lim, Boon H. (Inventor); Baranauskas, Dalius (Inventor); Zelenin, Denis (Inventor); Kangaslahti, Pekka (Inventor); Tanner, Alan B. (Inventor)

2017-01-01

According to one embodiment, a cross-correlator comprises a plurality of analog front ends (AFEs), a cross-correlation circuit and a data serializer. Each of the AFEs comprises a variable gain amplifier (VGA) and a corresponding analog-to-digital converter (ADC) in which the VGA receives and modifies a unique analog signal associates with a measured analog radio frequency (RF) signal and the ADC produces digital data associated with the modified analog signal. Communicatively coupled to the AFEs, the cross-correlation circuit performs a cross-correlation operation on the digital data produced from different measured analog RF signals. The data serializer is communicatively coupled to the summing and cross-correlating matrix and continuously outputs a prescribed amount of the correlated digital data.

Amplifier improvement circuit

NASA Technical Reports Server (NTRS)

Sturman, J.

1968-01-01

Stable input stage was designed for the use with a integrated circuit operational amplifier to provide improved performance as an instrumentation-type amplifier. The circuit provides high input impedance, stable gain, good common mode rejection, very low drift, and low output impedance.

Increasing power and amplified spontaneous emission suppression for weak signal amplification in pulsed fiber amplifier

NASA Astrophysics Data System (ADS)

Luo, Yi; Zhang, Hanwei; Wang, Xiaolin; Su, Rongtao; Ma, Pengfei; Zhou, Pu; Jiang, Zongfu

2017-10-01

In the pulsed fiber amplifiers with repetition frequency of several tens kHz, amplified spontaneous emission (ASE) is easy to build up because of the low repetition frequency and weak pulse signal. The ASE rises the difficulty to amplify the weak pulse signal effectively. We have demonstrated an all-fiber preamplifier stage structure to amplify a 40 kHz, 10 ns bandwidth (FWHM) weak pulse signal (299 μW) with center wavelength of 1062 nm. Compared synchronous pulse pump with continuous wave(CW) pump, the results indicate that synchronous pulse pump shows the better capability of increasing the output power than CW pump. In the condition of the same pump power, the output power of synchronous pulse pump is twice as high as CW pump. In order to suppress ASE, a longer gain fiber is utilized to reabsorb the ASE in which the wavelength is shorter than 1062nm. We amplified weak pulse signal via 0.8 m and 2.1 m gain fiber in synchronous pulse pump experiments respectively, and more ASE in the output spectra are observed in the 0.8 m gain fiber system. Due to the weaker ASE and consequent capability of higher pump power, the 2.1 m gain fiber is capable to achieve higher output power than shorter fiber. The output power of 2.1 m gain fiber case is limited by pump power.

Low-Noise Band-Pass Amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1982-01-01

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Multiple Differential-Amplifier MMICs Embedded in Waveguides

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schlecht, Erich

2010-01-01

Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.

Dual-range linearized transimpedance amplifier system

DOEpatents

Wessendorf, Kurt O.

2010-11-02

A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

Deflection amplifier for image dissectors

NASA Technical Reports Server (NTRS)

Salomon, P. M.

1977-01-01

Balanced symmetrical y-axis amplifier uses zener-diode level shifting to interface operational amplifiers to high voltage bipolar output stages. Nominal voltage transfer characteristic is 40 differential output volts per input volt; bandwidth, between -3-dB points, is approximately 8 kHz; loop gain is nominally 89 dB with closed loop gain of 26 dB.

Thermoelectric properties optimization of Fe2VGa by tuning electronic density of states via titanium doping

NASA Astrophysics Data System (ADS)

Wei, Pai-Chun; Huang, Ta-Sung; Lin, Shu-Wei; Guo, Guang-Yu; Chen, Yang-Yuan

2015-10-01

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe2V1-xTixGa by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe2VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogap to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m-1 K-2 at room temperature, which is comparable to the power factors of Bi2Te3-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe2VGa.

A grid amplifier

NASA Technical Reports Server (NTRS)

Kim, Moonil; Weikle, Robert M., II; Hacker, Jonathan B.; Delisio, Michael P.; Rutledge, David B.; Rosenberg, James J.; Smith, R. P.

1991-01-01

A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.

Field effect transistors improve buffer amplifier

NASA Technical Reports Server (NTRS)

1967-01-01

Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.

An AC modulated near infrared gain calibration system for a “Violin-Mode” transimpedance amplifier, intended for advanced LIGO suspensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lockerbie, N. A.; Tokmakov, K. V.

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a “tall-thin” rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse “Violin-Mode” vibrations of such a fibre, via the oscillatory movement of the shadowmore » cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor’s DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor’s more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz–300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m{sup −1} was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured

Improved Grid-Array Millimeter-Wave Amplifier

NASA Technical Reports Server (NTRS)

Rosenberg, James J.; Rutledge, David B.; Smith, R. Peter; Weikle, Robert

1993-01-01

Improved grid-array amplifiers operating at millimeter and submillimeter wavelengths developed for use in communications and radar. Feedback suppressed by making input polarizations orthogonal to output polarizations. Amplifier made to oscillate by introducing some feedback. Several grid-array amplifiers concatenated to form high-gain beam-amplifying unit.

Improved-Bandwidth Transimpedance Amplifier

NASA Technical Reports Server (NTRS)

Chapsky, Jacob

2009-01-01

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Zheng, Jia-Xin; Ma, Xiao-Hua; Lu, Yang; Zhao, Bo-Chao; Zhang, Hong-He; Zhang, Meng; Cao, Meng-Yi; Hao, Yue

2015-10-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f0 and 2f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00606), Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), and the National Natural Science Foundation of China (Grant No. 61334002).

Performance of a Combined System Using an X-Ray FEL Oscillator and a High-Gain FEL Amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, L.; Lindberg, R.; Kim, K. -J.

The LCLS-II at SLAC will feature a 4 GeV CW superconducting (SC) RF linac [1] that can potentially drive a 5th harmonic X-Ray FEL Oscillator (XFELO) to produce fully coherent, 1 MW photon pulses with a 5 meV bandwidth at 14.4 keV [2]. The XFELO output can serve as the input seed signal for a high-gain FEL amplifier employing fs electron beams from the normal conducting SLAC linac, thereby generating coherent, fs x-ray pulses with TW peak powers using a tapered undulator after saturation [3]. Coherent, intense output at several tens of keV will also be feasible if one considersmore » a harmonic generation scheme. Thus, one can potentially reach the 42 keV photon energy required for the MaRIE project [4] by beginning with an XFELO operating at the 3rd harmonic to produce 14.0 keV photons using a 12 GeV SCRF linac, and then subsequently using the high-gain harmonic generation scheme to generate and amplify the 3th harmonic at 42 keV [5]. We report extensive GINGER simulations that determine an optimized parameter set for the combined system.« less

Quantum-Limited Directional Amplifiers with Optomechanics

NASA Astrophysics Data System (ADS)

Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

2018-01-01

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

NASA Astrophysics Data System (ADS)

Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

2018-02-01

The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

PHYSICAL EFFECTS OCCURRING DURING GENERATION AND AMPLIFICATION OF LASER RADIATION: Ultimate values of the gain of solid-state rod amplifiers operating under inversion storage conditions

NASA Astrophysics Data System (ADS)

Bayanov, V. I.; Vinokurov, G. N.; Zhulin, V. I.; Yashin, V. E.

1989-02-01

A numerical calculation is reported of an inversion conservation coefficient of cylindrical rod solid-state amplifiers with the active element diameter from 1.5 to 15 cm operated under continuous pumping conditions. It is shown that the ultimate gain, limited only by superluminescence, exceeds considerably the value usually obtained in experiments. Various methods of eliminating parasitic effects, which limit the gain of real amplifiers, are considered. The degree of influence of these effects on the inversion conservation coefficient is discussed. The results are given of an experimental determination of the gain close to the ultimate value (0.18 cm- 1 for an active element 3 cm in diameter). Calculations are reported of the angular distributions of superluminescence and parasitic modes demonstrating that the latter can be suppressed by spatial filtering.

Limit circuit prevents overdriving of operational amplifier

NASA Technical Reports Server (NTRS)

Openshaw, F. L.

1967-01-01

Cutoff-type high gain amplifier coupled by a diode prevents overdriving of operational amplifier. An amplified feedback signal offsets the excess input signal that tends to cause the amplifier to exceed its preset limit. The output is, therfore, held to the set clamp level.

Reflex ring laser amplifier system

DOEpatents

Summers, M.A.

1983-08-31

The invention is a method and apparatus for providing a reflex ring laser system for amplifying an input laser pulse. The invention is particularly useful in laser fusion experiments where efficient production of high-energy and high power laser pulses is required. The invention comprises a large aperture laser amplifier in an unstable ring resonator which includes a combination spatial filter and beam expander having a magnification greater than unity. An input pulse is injected into the resonator, e.g., through an aperture in an input mirror. The injected pulse passes through the amplifier and spatial filter/expander components on each pass around the ring. The unstable resonator is designed to permit only a predetermined number of passes before the amplified pulse exits the resonator. On the first pass through the amplifier, the beam fills only a small central region of the gain medium. On each successive pass, the beam has been expanded to fill the next concentric non-overlapping region of the gain medium.

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

NASA Astrophysics Data System (ADS)

Hongfei, Yao; Yuxiong, Cao; Danyu, Wu; Xiaoxi, Ning; Yongbo, Su; Zhi, Jin

2013-07-01

A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedance is determined from load-pull simulation. A coplanar waveguide transmission line is adopted for its ease of fabrication. The chip size is 1.5 × 1.7 mm2 with the emitter area of 16 × 1 μm × 15 μm in the output stage. Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB. The high power gain makes it very suitable for medium power amplification.

Photonic-band-gap gyrotron amplifier with picosecond pulses.

PubMed

Nanni, Emilio A; Jawla, Sudheer; Lewis, Samantha M; Shapiro, Michael A; Temkin, Richard J

2017-12-04

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03 -like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Noise reduction in plasmonic amplifiers

NASA Astrophysics Data System (ADS)

Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-06-01

Surface plasmon polaritons amplification give the possibility to overcome strong absorption in metals and design truly nanoscale devices for on-chip photonic circuits. However, the process of stimulated emission in the gain medium is inevitably accompanied by spontaneous emission, which greatly increases the noise power. Herein we present an efficient strategy for noise reduction in plasmonic amplifiers,which is based on gain redistribution along the amplifier. We show that even a very small gain redistribution (∼3%) makes it possible to increase the signal-to-noise ratio by ∼100% and improve the bit error ratio by orders of magnitude.

A high gain energy amplifier operated with fast neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubbia, C.

1995-10-01

The basic concept and the main practical considerations of an Energy Amplifier (EA) have been exhaustively described elsewhere. Here the concept of the EA is further explored and additional schemes are described which offer a higher gain, a larger maximum power density and an extended burn-up. All these benefits stem from the use of fast neutrons, instead of thermal or epithermal ones, which was the case in the original study. The higher gain is due both to a more efficient high energy target configuration and to a larger, practical value of the multiplication factor. The higher power density results frommore » the higher permissible neutron flux, which in turn is related to the reduced rate of {sup 233}Pa neutron captures (which, as is well known, suppress the formation of the fissile {sup 233}U fuel) and the much smaller k variations after switch-off due to {sup 233}Pa decays for a given burn-up rate. Finally a longer integrated burn-up is made possible by reduced capture rate by fission fragments of fast neutrons. In practice a 20 MW proton beam (20 mA @ 1 GeV) accelerated by a cyclotron will suffice to operate a compact EA at the level of {approx} 1 GW{sub e}. The integrated fuel burn-up can be extended in excess of 100 GW d/ton, limited by the mechanical survival of the fuel elements. Radio-Toxicity accumulated at the end of the cycle is found to be largely inferior to the one of an ordinary Reactor for the same energy produced. Schemes are proposed which make a {open_quotes}melt-down{close_quotes} virtually impossible. The conversion ratio, namely the rate of production of {sup 233}U relative to consumption is generally larger than unity, which permits production of fuel for other uses. Alternatively the neutron excess can be used to transform unwanted {open_quotes}ashes{close_quotes} into more acceptable elements.« less

A high gain free electron laser amplifier design for the Alcator-C tokamak. [FRED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jong, R.A.

1987-02-01

We describe an improved wiggler tapering algorithm and the resulting wiggler design for a high-gain free electron laser amplifier to be used for plasma heating and current drive experiments in the Alcator-C tokamak. Unlike the original, this new design limits the growth of the shot noise to insignificant levels. The design goal of at least 8 GW of peak power in the TE/sub 01/ mode was achieved with a 3 kA electron beam with energies in the 7 to 9 MeV range and a beam brightness of 10/sup 5/ A/(rad-cm)/sup 2/. The wiggler was 5 m long with a wigglermore » wavelength of 8 cm.« less

MMIC DHBT Common-Base Amplifier for 172 GHz

NASA Technical Reports Server (NTRS)

Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

2006-01-01

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this

Quantitative analysis of four EMG amplifiers.

PubMed

Perreault, E J; Hunter, I W; Kearney, R E

1993-09-01

Four typical EMG amplifiers were tested quantitatively to observe the diversity and specificity of available equipment. Gain, phase, common mode rejection ratio (CMRR) and noise characteristics were measured for each device. Various gain and phase responses were observed, each best suited to specific application areas. For all amplifiers, the CMRR was shown to decrease dramatically in the presence of input impedance mismatches of more than 10 k omega between the two electrodes. Because such impedance mismatches are common on the skin surface, these results indicate that proper skin preparation is required to maximize the noise rejection capabilities of the tested amplifiers.

Thermoelectric properties optimization of Fe{sub 2}VGa by tuning electronic density of states via titanium doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Pai-Chun, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw; Huang, Ta-Sung; Chen, Yang-Yuan, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw

2015-10-28

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe{sub 2}V{sub 1-x}Ti{sub x}Ga by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe{sub 2}VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogapmore » to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m{sup −1} K{sup −2} at room temperature, which is comparable to the power factors of Bi{sub 2}Te{sub 3}-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe{sub 2}VGa.« less

Linearly polarized fiber amplifier

DOEpatents

Kliner, Dahv A.; Koplow, Jeffery P.

2004-11-30

Optically pumped rare-earth-doped polarizing fibers exhibit significantly higher gain for one linear polarization state than for the orthogonal state. Such a fiber can be used to construct a single-polarization fiber laser, amplifier, or amplified-spontaneous-emission (ASE) source without the need for additional optical components to obtain stable, linearly polarized operation.

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE PAGES

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; ...

2017-12-05

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Polarization independent thermally tunable erbium-doped fiber amplifier gain equalizer using a cascaded Mach-Zehnder coupler.

PubMed

Sahu, P P

2008-02-10

A thermally tunable erbium-doped fiber amplifier (EDFA) gain equalizer filter based on compact point symmetric cascaded Mach-Zehnder (CMZ) coupler is presented with its mathematical model and is found to be polarization dependent due to stress anisotropy caused by local heating for thermo-optic phase change from its mathematical analysis. A thermo-optic delay line structure with a stress releasing groove is proposed and designed for the reduction of polarization dependent characteristics of the high index contrast point symmetric delay line structure of the device. It is found from thermal analysis by using an implicit finite difference method that temperature gradients of the proposed structure, which mainly causes the release of stress anisotropy, is approximately nine times more than that of the conventional structure. It is also seen that the EDFA gain equalized spectrum by using the point symmetric CMZ device based on the proposed structure is almost polarization independent.

Bidirectional amplifier

DOEpatents

Wright, J.T.

1984-02-02

A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

Bidirectional amplifier

DOEpatents

Wright, James T.

1986-01-01

A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

Note: A high dynamic range, linear response transimpedance amplifier.

PubMed

Eckel, S; Sushkov, A O; Lamoreaux, S K

2012-02-01

We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

High power regenerative laser amplifier

DOEpatents

Miller, John L.; Hackel, Lloyd A.; Dane, Clifford B.; Zapata, Luis E.

1994-01-01

A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse.

High power regenerative laser amplifier

DOEpatents

Miller, J.L.; Hackel, L.A.; Dane, C.B.; Zapata, L.E.

1994-02-08

A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse. 7 figures.

Single mode terahertz quantum cascade amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Y., E-mail: yr235@cam.ac.uk; Wallis, R.; Shah, Y. D.

2014-10-06

A terahertz (THz) optical amplifier based on a 2.9 THz quantum cascade laser (QCL) structure has been demonstrated. By depositing an antireflective coating on the QCL facet, the laser mirror losses are enhanced to fully suppress the lasing action, creating a THz quantum cascade (QC) amplifier. Terahertz radiation amplification has been obtained, by coupling a separate multi-mode THz QCL of the same active region design to the QC amplifier. A bare cavity gain is achieved and shows excellent agreement with the lasing spectrum from the original QCL without the antireflective coating. Furthermore, a maximum optical gain of ∼30 dB with single-modemore » radiation output is demonstrated.« less

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Simple two-electrode biosignal amplifier.

PubMed

Dobrev, D; Neycheva, T; Mudrov, N

2005-11-01

A simple, cost effective circuit for a two-electrode non-differential biopotential amplifier is proposed. It uses a 'virtual ground' transimpedance amplifier and a parallel RC network for input common mode current equalisation, while the signal input impedance preserves its high value. With this innovative interface circuit, a simple non-inverting amplifier fully emulates high CMRR differential. The amplifier equivalent CMRR (typical range from 70-100 dB) is equal to the open loop gain of the operational amplifier used in the transimpedance interface stage. The circuit has very simple structure and utilises a small number of popular components. The amplifier is intended for use in various two-electrode applications, such as Holter-type monitors, defibrillators, ECG monitors, biotelemetry devices etc.

Amplified OTDR systems for multipoint corrosion monitoring.

PubMed

Nascimento, Jehan F; Silva, Marcionilo J; Coêlho, Isnaldo J S; Cipriano, Eliel; Martins-Filho, Joaquim F

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations.

Amplified OTDR Systems for Multipoint Corrosion Monitoring

PubMed Central

Nascimento, Jehan F.; Silva, Marcionilo J.; Coêlho, Isnaldo J. S.; Cipriano, Eliel; Martins-Filho, Joaquim F.

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations. PMID:22737017

Determination of the STIS CCD Gain

NASA Astrophysics Data System (ADS)

Riley, Allyssa; Monroe, TalaWanda; Lockwood, Sean

2016-09-01

This report summarizes the analysis and absolute gain results of the STIS Cycle 23 special calibration program 14424 that was designed to measure the gain of amplifiers A, C and D at nominal gain settings of 1 and 4 e-/DN. We used the mean-variance technique and the results indicate a <3.5% change in the gain for amplifier D from when it was originally calculated pre-flight. We compared these values to previous measurements from Cycles 17 through 23. This report outlines the observations, methodology, and results of the mean-variance technique.

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation. 11 figs.

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, Victor E. [Livermore, CA; Haas, Roger A. [Pleasanton, CA; Krupke, William F. [Pleasanton, CA; Schlitt, Leland G. [Livermore, CA

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation.

Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-10-01

We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

Helical Fiber Amplifier

DOEpatents

Koplow, Jeffrey P.; Kliner, Dahy; Goldberg, Lew

2002-12-17

A multi-mode gain fiber is provided which affords substantial improvements in the maximum pulse energy, peak power handling capabilities, average output power, and/or pumping efficiency of fiber amplifier and laser sources while maintaining good beam quality (comparable to that of a conventional single-mode fiber source). These benefits are realized by coiling the multimode gain fiber to induce significant bend loss for all but the lowest-order mode(s).

Some Notes on Wideband Feedback Amplifiers

DOE R&D Accomplishments Database

Fitch, V.

1949-03-16

The extension of the passband of wideband amplifiers is a highly important problem to the designer of electronic circuits. Throughout the electronics industry and in many research programs in physics and allied fields where extensive use is made of video amplifiers, the foremost requirement is a passband of maximum width. This is necessary if it is desired to achieve a more faithful reproduction of transient wave forms, a better time resolution in physical measurements, or perhaps just a wider band gain-frequency response to sine wave signals. The art of electronics is continually faced with this omnipresent amplifier problem. In particular, the instrumentation techniques of nuclear physics require amplifiers with short rise times, a high degree of gain stability, and a linear response to high signal levels. While the distributed amplifier may solve the problems of those seeking only a wide passband, the requirements of stability and linearity necessitate using feedback circuits. This paper considers feedback amplifiers from the standpoint of high-frequency performance. The circuit conditions for optimum steady-state (sinusoidal) and transient response are derived and practical circuits (both interstage and output) are presented which fulfill these conditions. In general, the results obtained may be applied to the low-frequency end.

Power-Amplifier Module for 145 to 165 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Peralta, Alejandro

2007-01-01

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Real Time Calibration Method for Signal Conditioning Amplifiers

NASA Technical Reports Server (NTRS)

Medelius, Pedro J. (Inventor); Mata, Carlos T. (Inventor); Eckhoff, Anthony (Inventor); Perotti, Jose (Inventor); Lucena, Angel (Inventor)

2004-01-01

A signal conditioning amplifier receives an input signal from an input such as a transducer. The signal is amplified and processed through an analog to digital converter and sent to a processor. The processor estimates the input signal provided by the transducer to the amplifier via a multiplexer. The estimated input signal is provided as a calibration voltage to the amplifier immediately following the receipt of the amplified input signal. The calibration voltage is amplified by the amplifier and provided to the processor as an amplified calibration voltage. The amplified calibration voltage is compared to the amplified input signal, and if a significant error exists, the gain and/or offset of the amplifier may be adjusted as necessary.

Pulse laser imaging amplifier for advanced ladar systems

NASA Astrophysics Data System (ADS)

Khizhnyak, Anatoliy; Markov, Vladimir; Tomov, Ivan; Murrell, David

2016-05-01

Security measures sometimes require persistent surveillance of government, military and public areas Borders, bridges, sport arenas, airports and others are often surveilled with low-cost cameras. Their low-light performance can be enhanced with laser illuminators; however various operational scenarios may require a low-intensity laser illumination with the object-scattered light intensity lower than the sensitivity of the Ladar image detector. This paper discusses a novel type of high-gain optical image amplifier. The approach enables time-synchronization of the incoming and amplifying signals with accuracy <= 1 ns. The technique allows the incoming signal to be amplified without the need to match the input spectrum to the cavity modes. Instead, the incoming signal is accepted within the spectral band of the amplifier. We have gauged experimentally the performance of the amplifier with a 40 dB gain and an angle of view 20 mrad.

Yb:YAG master oscillator power amplifier for remote wind sensing.

PubMed

Sridharan, A K; Saraf, S; Byer, R L

2007-10-20

We have demonstrated key advances towards a solid-state laser amplifier at 1.03 microm for global remote wind sensing. We designed end-pumped zig-zag slab amplifiers to achieve high gain. We overcame parasitic oscillation limitations using claddings on the slab's total internal reflection (TIR) and edge surfaces to confine the pump and signal light by TIR and allow leakage of amplified spontaneous emission rays that do not meet the TIR condition. This enables e3, e5, and e8 single-, double-, and quadruple-pass small-signal amplifier gain, respectively. The stored energy density is 15.6 J/cm3, a record for a laser-diode end-pumped Yb:YAG zig-zag slab amplifier.

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.

Adaptive gain and filtering circuit for a sound reproduction system

NASA Technical Reports Server (NTRS)

Engebretson, A. Maynard (Inventor); O'Connell, Michael P. (Inventor)

1998-01-01

Adaptive compressive gain and level dependent spectral shaping circuitry for a hearing aid include a microphone to produce an input signal and a plurality of channels connected to a common circuit output. Each channel has a preset frequency response. Each channel includes a filter with a preset frequency response to receive the input signal and to produce a filtered signal, a channel amplifier to amplify the filtered signal to produce a channel output signal, a threshold register to establish a channel threshold level, and a gain circuit. The gain circuit increases the gain of the channel amplifier when the channel output signal falls below the channel threshold level and decreases the gain of the channel amplifier when the channel output signal rises above the channel threshold level. A transducer produces sound in response to the signal passed by the common circuit output.

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

NASA Technical Reports Server (NTRS)

Binkley, David M.; Verma, Nikhil; Crawford, Robert L.; Brandon, Erik; Jackson, Thomas N.

2004-01-01

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

Experimental design studies and flow visualization of proportional laminar-flow fluidic amplifiers

NASA Technical Reports Server (NTRS)

Hellbaum, R. F.; Mcdermon, J. N.

1977-01-01

The effects of certain parameter variations on the performance characteristics of laminar, proportional, jet-deflection fluidic amplifiers were studied. The matching and staging of amplifiers to obtain high pressure gain was included, but dynamic effects were not. The parameter variations considered were aspect ratio, setback, control length, splitter distance, receiver-duct width, width of center-vent duct, and bias pressure. Usable pressure gains of 19 per stage were achieved, and 5 amplifier stages were integrated to yield an overall pressure gain of 2,000,000.

Optical amplifiers for coherent lidar

NASA Technical Reports Server (NTRS)

Fork, Richard

1996-01-01

We examine application of optical amplification to coherent lidar for the case of a weak return signal (a number of quanta of the return optical field close to unity). We consider the option that has been explored to date, namely, incorporation of an optical amplifier operated in a linear manner located after reception of the signal and immediately prior to heterodyning and photodetection. We also consider alternative strategies where the coherent interaction, the nonlinear processes, and the amplification are not necessarily constrained to occur in the manner investigated to date. We include the complications that occur because of mechanisms that occur at the level of a few, or one, quantum excitation. Two factors combine in the work to date that limit the value of the approach. These are: (1) the weak signal tends to require operation of the amplifier in the linear regime where the important advantages of nonlinear optical processing are not accessed, (2) the linear optical amplifier has a -3dB noise figure (SN(out)/SN(in)) that necessarily degrades the signal. Some improvement is gained because the gain provided by the optical amplifier can be used to overcome losses in the heterodyned process and photodetection. The result, however, is that introduction of an optical amplifier in a well optimized coherent lidar system results in, at best, a modest improvement in signal to noise. Some improvement may also be realized on incorporating more optical components in a coherent lidar system for purely practical reasons. For example, more compact, lighter weight, components, more robust alignment, or more rapid processing may be gained. We further find that there remain a number of potentially valuable, but unexplored options offered both by the rapidly expanding base of optical technology and the recent investigation of novel nonlinear coherent interference phenomena occurring at the single quantum excitation level. Key findings are: (1) insertion of linear optical

Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2014-02-01

The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho; Yu, Bong-Ahn

2015-03-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

On the ''excess spontaneous emission factor'' in gainguided laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haus, H.A.; Kawakami, S.

1985-01-01

Petermann computed an ''excess spontaneous emission factor'' for gain-guided laser. In this paper, the authors investigate further the role of this factor. Such a factor also appears in the treatment of thermodynamic equilibrium in an attenuating medium-a seeming paradox. Further investigation shows that the excess spontaneous emission excitation at thermal equilibrium is cancelled by the excitations in the other modes which are correlated with that in the fundamental mode. In a medium with gain, cancellation also occurs in a short amplifier in which there is no gain discrimination among modes. The ''excess spontaneous emission factor'' is fully present only inmore » a system in which the different higher order modes have an appreciably smaller gain than the lowest order mode, a high gain amplifier. An analysis of the signal-tonoise ratio of a high gain amplifier reveals that the excess noise factor can be fully compensated by proper input excitation by a lens arrangement. The lens arrangement provides the signal with an ''excess gain'' factor. An ''excess gain'' factor is also present when a thermal source is used.« less

Refinement of Er3+-doped hole-assisted optical fiber amplifier.

PubMed

D'Orazio, A; De Sario, M; Mescia, L; Petruzzelli, V; Prudenzano, F

2005-12-12

This paper deals with design and refinement criteria of erbium doped hole-assisted optical fiber amplifiers for applications in the third band of fiber optical communication. The amplifier performance is simulated via a model which takes into account the ion population rate equations and the optical power propagation. The electromagnetic field profile of the propagating modes is carried out by a finite element method solver. The effects of the number of cladding air holes on the amplifier performance are investigated. To this aim, four different erbium doped hole-assisted lightguide fiber amplifiers having a different number of cladding air holes are designed and compared. The simulated optimal gain, optimal length, and optimal noise fig. are discussed. The numerical results highlight that, by increasing the number of air holes, the gain can be improved, thus obtaining a shorter amplifier length. For the erbium concentration NEr=1.8x1024 ions/m3, the optimal gain G(Lopt) increases up to ~2dB by increasing the number of the air holes from M=4 to M=10.

High power, high beam quality regenerative amplifier

DOEpatents

Hackel, L.A.; Dane, C.B.

1993-08-24

A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

High power, high beam quality regenerative amplifier

DOEpatents

Hackel, Lloyd A.; Dane, Clifford B.

1993-01-01

A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Schmitz, Adele

2009-01-01

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2

Study of the amplified spontaneous emission spectral width and gain coefficient for a KrF laser in unsaturated and saturated conditions

NASA Astrophysics Data System (ADS)

Hariri, A.; Sarikhani, S.

2014-01-01

On the basis of a model of a geometrically dependent gain coefficient, the amplified spontaneous emission (ASE) spectral width was calculated analytically for the nearly resonant transition of ν ˜ ν0, and also numerically for a wide range of transition frequencies. For this purpose, the intensity rate equation was used under unsaturated and saturated conditions. For verifying the proposed model, reported measurements of the ASE energy versus the excitation length for a KrF laser were used. For the excitation length of l = 84 cm corresponding to single-path propagation, the ASE spectral width for the homogeneously broadened transition was calculated to be 6.28 Å, to be compared with the measured 4.1 Å spectral width reported for a KrF oscillator utilizing a two-mirror resonator. With the gain parameters obtained from the ASE energy measurements, the unsaturated and saturated gain coefficients for l = 84 cm were calculated to be 0.042 cm-1 and 0.014 cm-1, respectively. These values of the gain coefficient are comparable to but slightly lower than the measured gain coefficient for laser systems of 80-100 cm excitation lengths reported from different laboratories.

Small-signal amplifier based on single-layer MoS2

NASA Astrophysics Data System (ADS)

Radisavljevic, Branimir; Whitwick, Michael B.; Kis, Andras

2012-07-01

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.

Bismuth-doped fibre amplifier operating between 1600 and 1800 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Firstov, S V; Alyshev, S V; Riumkin, K E

2015-12-31

We report the first bismuth-doped fibre amplifier operating between 1600 and 1800 nm, which utilises bidirectional pumping (co-propagating and counter-propagating pump beams) by laser diodes at a wavelength of 1550 nm. The largest gain coefficient of the amplifier is 23 dB, at a wavelength of 1710 nm. It has a noise figure of 7 dB, 3-dB gain bandwidth of 40 nm and gain efficiency of 0.1 dB mW{sup -1}. (letters)

Precision absolute-value amplifier for a precision voltmeter

DOEpatents

Hearn, W.E.; Rondeau, D.J.

1982-10-19

Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resistor is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resistor. The output current through the load resistor is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resistor. A second gain determining resistor is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.

Precision absolute value amplifier for a precision voltmeter

DOEpatents

Hearn, William E.; Rondeau, Donald J.

1985-01-01

Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resister is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resister. The output current through the load resister is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resister. A second gain determining resister is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.

Single-frequency gain-switched Ho-doped fiber laser

NASA Astrophysics Data System (ADS)

Geng, Jihong; Wang, Q.; Luo, T.; Case, B.; Jiang, S.; Amzajerdian, Farzin; Yu, Jirong

2012-10-01

We demonstrate a single-frequency gain-switched Ho-doped fiber laser based on heavily doped silicate glass fiber fabricated in house. A Q-switched Tm-doped fiber laser at 1.95μm was used to gain-switch the Ho-doped fiber laser via in-band pumping. Output power of the single-frequency gain-switched pulses has been amplified in a cladding-pumped Tm-Ho-codoped fiber amplifier with 1.2m active fiber pumped at 803nm. Two different nonlinear effects, i.e., modulation instability and stimulated Brillouin scattering, could be seen in the 10μm-core fiber amplifier when the peak power exceeds 3kW. The single-frequency gain-switched fiber laser was operated at 2.05μm, a popular laser wavelength for Doppler lidar application. This is the first demonstration of this kind of fiber laser.

High input impedance amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L.

1995-01-01

High input impedance amplifiers are provided which reduce the input impedance solely to a capacitive reactance, or, in a somewhat more complex design, provide an extremely high essentially infinite, capacitive reactance. In one embodiment, where the input impedance is reduced in essence, to solely a capacitive reactance, an operational amplifier in a follower configuration is driven at its non-inverting input and a resistor with a predetermined magnitude is connected between the inverting and non-inverting inputs. A second embodiment eliminates the capacitance from the input by adding a second stage to the first embodiment. The second stage is a second operational amplifier in a non-inverting gain-stage configuration where the output of the first follower stage drives the non-inverting input of the second stage and the output of the second stage is fed back to the non-inverting input of the first stage through a capacitor of a predetermined magnitude. These amplifiers, while generally useful, are very useful as sensor buffer amplifiers that may eliminate significant sources of error.

Electrospun amplified fiber optics.

PubMed

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Effects of entanglement in an ideal optical amplifier

NASA Astrophysics Data System (ADS)

Franson, J. D.; Brewster, R. A.

2018-04-01

In an ideal linear amplifier, the output signal is linearly related to the input signal with an additive noise that is independent of the input. The decoherence of a quantum-mechanical state as a result of optical amplification is usually assumed to be due to the addition of quantum noise. Here we show that entanglement between the input signal and the amplifying medium can produce an exponentially-large amount of decoherence in an ideal optical amplifier even when the gain is arbitrarily close to unity and the added noise is negligible. These effects occur for macroscopic superposition states, where even a small amount of gain can leave a significant amount of which-path information in the environment. Our results show that the usual input/output relation of a linear amplifier does not provide a complete description of the output state when post-selection is used.

A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

NASA Astrophysics Data System (ADS)

Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

2017-12-01

To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

Kinetics of the Active Medium of a Copper Vapor Brightness Amplifier

NASA Astrophysics Data System (ADS)

Kulagin, A. E.; Torgaev, S. N.; Evtushenko, G. S.; Trigub, M. V.

2018-03-01

A spatiotemporal kinetics of the active medium of a copper vapor brightness amplifier is described that allows gain characteristics to be investigated during the pump pulse. Model calculations show that changing the discharge parameters allows the radial gain profiles to be improved significantly, as well as the gain and the inversion duration to be increased. The data obtained will be used to choose the operating conditions for the active medium in the brightness amplifier mode.

An Introduction to Phase-Sensitive Amplifiers: An Inexpensive Student Instrument

ERIC Educational Resources Information Center

Temple, Paul A.

1975-01-01

Discusses the principle of operation of phase-sensitive amplifiers. Gives three examples, suitable for undergraduate laboratory use, of the use of phase-sensitive, or "lock-in" amplifiers. Concludes with a description of an inexpensive lock-in amplifier which has an overall voltage gain of 1000. (Author/MLH)

A single supply biopotential amplifier.

PubMed

Spinelli, E M; Martinez, N H; Mayosky, M A

2001-04-01

A biopotential amplifier for single supply operation is presented. It uses a Driven Right Leg Circuit (DRL) to drive the patient's body to a DC common mode voltage, centering biopotential signals with respect to the amplifier's input voltage range. This scheme ensures proper range operation when a single power supply is used. The circuit described is especially suited for low consumption, battery-powered applications, requiring a single battery and avoiding switching voltage inverters to achieve dual supplies. The generic circuit is described and, as an example, a biopotential amplifier with a gain of 60 dB and a DC input range of +/-200 mV was implemented using low power operational amplifiers. A Common Mode Rejection Ratio (CMRR) of 126 dB at 50 Hz was achieved without trimming.

Amplified spontaneous emission in solar-pumped iodine laser

NASA Technical Reports Server (NTRS)

Cho, Yong S.; Hwang, In H.; Han, Kwang S.; Lee, Ja H.

1992-01-01

The amplified spontaneous emission (ASE) from a long pulse, solar-simulating radiation pumped iodine laser amplifier is studied. The ASE threshold pump intensity is almost proportional to the inverse of the laser gain length when the gas pressure is constant in the laser tube.

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Matched wideband low-noise amplifiers for radio astronomy.

PubMed

Weinreb, S; Bardin, J; Mani, H; Jones, G

2009-04-01

Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.

High power diode laser Master Oscillator-Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Andrews, John R.; Mouroulis, P.; Wicks, G.

1994-01-01

High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

Ku band low noise parametric amplifier

NASA Technical Reports Server (NTRS)

1976-01-01

A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

Ku-band high efficiency GaAs MMIC power amplifiers

NASA Technical Reports Server (NTRS)

Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul

1988-01-01

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Low Loss Nanostructured Polymers for Chip-scale Waveguide Amplifiers.

PubMed

Chen, George F R; Zhao, Xinyu; Sun, Yang; He, Chaobin; Tan, Mei Chee; Tan, Dawn T H

2017-06-13

On-chip waveguide amplifiers offer higher gain in small device sizes and better integration with photonic devices than the commonly available fiber amplifiers. However, on-chip amplifiers have yet to make its way into the mainstream due to the limited availability of materials with ideal light guiding and amplification properties. A low-loss nanostructured on-chip channel polymeric waveguide amplifier was designed, characterized, fabricated and its gain experimentally measured at telecommunication wavelength. The active polymeric waveguide core comprises of NaYF 4 :Yb,Er,Ce core-shell nanocrystals dispersed within a SU8 polymer, where the nanoparticle interfacial characteristics were tailored using hydrolyzed polyhedral oligomeric silsesquioxane-graft-poly(methyl methacrylate) to improve particle dispersion. Both the enhanced IR emission intensity from our nanocrystals using a tri-dopant scheme and the reduced scattering losses from our excellent particle dispersion at a high solid loading of 6.0 vol% contributed to the outstanding optical performance of our polymeric waveguide. We achieved one of the highest reported gain of 6.6 dB/cm using a relatively low coupled pump power of 80 mW. These polymeric waveguide amplifiers offer greater promise for integrated optical circuits due to their processability and integration advantages which will play a key role in the emerging areas of flexible communication and optoelectronic devices.

Diode-pumped large-aperture Nd:YAG slab amplifier for high energy nanosecond pulse laser

NASA Astrophysics Data System (ADS)

Guo, Guangyan; Chen, Yanzhong; He, Jianguo; Lang, Ye; Lin, Weiran; Tang, Xiongxin; Zhang, Hongbo; Kang, Zhijun; Fan, Zhongwei

2017-10-01

A high gain, low thermal-induced wavefront distortion, laser diode-pumped Nd: YAG slab amplifier is demonstrated with its active media dimensions of 7 mm ×35 mm ×138.2 mm. Under the 200 Hz, 1440 W pulse pumping condition while no seed light to amplify, the thermal induced wavefront aberration of a He-Ne probe passing through the gain meUdium is 0.165 λ@633 nm (RMS). The amplifier shows stable aberration character with two major low-order terms, defocus and 0° astigmatism. The fluorescence distribution, stored energy, and small-signal gain of the amplifier are measured and have a good agreement with the calculated results. In the amplifier, the fluorescence is uniformly distributed and the maximum stored energy of 3.2 J can be achieved with a plane-concave cavity at 200 Hz pump repetition frequency. For a repetition frequency of 200 Hz, 25 μJ injection polarized seed-light and 1440 W pump power, the small signal gain reaches 9.45. The amplifier has been successfully employed in a 200 Hz, 5 J, MOPA system with 1.7 times diffraction limited output.

Four-wave-mixing suppression in Er 3+-fiber amplifiers by backward pumping

NASA Astrophysics Data System (ADS)

Adel, P.; Engelbrecht, M.; Wandt, D.; Fallnich, C.

2007-03-01

Amplification of chirped fs-pulses in an Erbium doped fiber amplifier upto 0.8 μJ resulted in an additional peak in the spectrum at 1584 nm. This peak, attributable to four-wave-mixing between the signal centered at 1559 nm and amplified spontaneous emission at 1534 nm, hinders the temporal recompression of the amplified chirped pulse. Compared to the forward pumping configuration, this four-wave-mixing in the amplifier was largely reduced in a backward pumping configuration. Based on simulations, explanations for the observed influence of the pump direction on the four-wave-mixing efficiency are presented. The results pointed out that the gain spectrum distribution along the fiber strongly influences four-wave-mixing effects in fiber amplifiers even for constant overall gain spectrum.

The 20 GHz GaAs monolithic power amplifier module development

NASA Technical Reports Server (NTRS)

1984-01-01

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Double-differential recording and AGC using microcontrolled variable gain ASIC.

PubMed

Rieger, Robert; Deng, Shin-Liang

2013-01-01

Low-power wearable recording of biopotentials requires acquisition front-ends with high common-mode rejection for interference suppression and adjustable gain to provide an optimum signal range to a cascading analogue-to-digital stage. A microcontroller operated double-differential (DD) recording setup and automatic gain control circuit (AGC) are discussed which reject common-mode interference and provide tunable gain, thus compensating for imbalance and variation in electrode interface impedance. Custom-designed variable gain amplifiers (ASIC) are used as part of the recording setup. The circuit gain and balance is set by the timing of microcontroller generated clock signals. Measured results are presented which confirm that improved common-mode rejection is achieved compared to a single differential amplifier in the presence of input network imbalance. Practical measured examples further validate gain control suitable for biopotential recording and power-line rejection for wearable ECG and EMG recording. The prototype front-end consumes 318 μW including amplifiers and microcontroller.

First pulse effect self-suppression picosecond regenerative amplifier (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fan, Haitao; Chang, Liang; Zhang, Yi; Yao, Siyi; Lu, Wei; Yang, Xiaohong

2017-03-01

First pulse effect, commonly seen in nanosecond cavity-dumped lasers and picosecond regenerative amplifiers, not only leads to degradation of processing quality, but also acts as potential threat to optical switching elements. Several methods have been developed to suppress that effect, including electronic controls, polarization controls, and diffraction controls. We present a new way for first pulse self-suppression without any additional components. By carefully arranging the cavity mirror of a regenerative amplifier, we realized `parasitic lasing like' radiation. When the regenerative amplifier works in `operation ready' status, the parasitic lasing occurs and prevents the gain crystal from saturation. When the regenerative amplifier starts working and amplifying pulses, the first pulse in a pulse train will not get much more gain and energy than pulses following it. As parasitic lasing disappears at the same time, the average output power of the amplifier does not significantly reduce. This cost effective method does not require any additional component. In addition, as it is not polarization dependent, this method is widely suitable for different kinds of regenerative amplifiers. It's the easiest and cheapest way to suppress first pulse effect, to the best of our knowledge.

Optimisation of cascaded Yb fiber amplifier chains using numerical-modelling

NASA Astrophysics Data System (ADS)

He, F.; Price, J. H.; Vu, K. T.; Malinowski, A.; Sahu, J. K.; Richardson, D. J.

2006-12-01

We show that it is possible to adapt existing software packages developed originally for modeling telecommunication devices and systems to reliably predict and optimize the performance of high-power Ytterbium-doped fiber amplifier and laser systems. The ready availability of a flexible, user-friendly design tool should be of considerable practical interest to scientists and engineers working with this important new laser technology since Ytterbium amplifier and amplifier cascades are often difficult to optimize experimentally due to the three-level nature of the Ytterbium laser transition. As examples of the utility and accuracy of the software, as well as the complexity of the systems and amplifier properties that can be successfully modeled, we present a comparison of experimental and theoretical results for individual core and cladding pumped amplifiers, and also for an ultra-short pulse four-stage amplifier system optimized both to provide a broad gain bandwidth and to minimize nonlinear effects. We also show how high energy 100 ns pulses with complex user definable temporal profiles can be created in a gain-saturated amplifier by suitable pre-shaping of the low-energy input pulses. Furthermore, with appropriate modifications the same software package can be applied to fiber amplifiers based on other rare-earth elements and glass hosts.

Transients control in Raman fiber amplifiers

NASA Astrophysics Data System (ADS)

Freitas, Marcio; Givigi, Sidney N., Jr.; Klein, Jackson; Calmon, Luiz C.; de Almeida, Ailson R.

2004-11-01

Raman fiber amplifiers (RFA) are being used in optical transmission communication systems in the recent years due to their advantages in comparison to erbium-doped fiber amplifiers (EDFA). Recently the analysis of RFAs dynamic response and transients control has become important in order to predict the system response to add/drop of channels or cable cuts in optical systems, and avoid impairments caused by the power transients. Fast signal power transients in the surviving channels are caused by the cross-gain saturation effect in RFA and the slope of the gain saturation characteristics determines the steady-state surviving channel power excursion. We are presenting the modeling and analysis of power transients and its control using a pump control method for a single and multi-pump scheme.

Regional vicarious gain adjustment for coastal VIIRS products

NASA Astrophysics Data System (ADS)

Bowers, Jennifer; Arnone, Robert; Ladner, Sherwin; Fargion, Giulietta S.; Lawson, Adam; Martinolich, Paul; Vandermeulen, Ryan

2014-05-01

As part of the Joint Polar Satellite System (JPSS) Ocean Cal/Val Team, Naval Research Lab - Stennis Space Center (NRL-SSC) has been working to facilitate calibration and validation of the Visible Infrared Imaging Radiometer Suite (VIIRS) ocean color products. By relaxing the constraints of the NASA Ocean Biology Processing Group (OBPG) methodology for vicarious calibration of ocean color satellites and utilizing the Aerosol Robotic Network Ocean Color (AERONET-OC) system to provide in situ data, we investigated differences between remotely sensed water leaving radiance and the expected in situ response in coastal areas and compare the results to traditional Marine Optical Buoy (MOBY) calibration/validation activities. An evaluation of the Suomi National Polar-Orbiting Partnership (SNPP)-VIIRS ocean color products was performed in coastal waters using the time series data obtained from the Northern Gulf of Mexico AERONET-OC site, WaveCIS. The coastal site provides different water types with varying complexity of CDOM, sedimentary, and chlorophyll components. Time series data sets were used to develop a vicarious gain adjustment (VGA) at this site, which provides a regional top of the atmospheric (TOA) spectral offset to compare the standard MOBY spectral calibration gain in open ocean waters.

A micropower electrocardiogram amplifier.

PubMed

Fay, L; Misra, V; Sarpeshkar, R

2009-10-01

We introduce an electrocardiogram (EKG) preamplifier with a power consumption of 2.8 muW, 8.1 muVrms input-referred noise, and a common-mode rejection ratio of 90 dB. Compared to previously reported work, this amplifier represents a significant reduction in power with little compromise in signal quality. The improvement in performance may be attributed to many optimizations throughout the design including the use of subthreshold transistor operation to improve noise efficiency, gain-setting capacitors versus resistors, half-rail operation wherever possible, optimal power allocations among amplifier blocks, and the sizing of devices to improve matching and reduce noise. We envision that the micropower amplifier can be used as part of a wireless EKG monitoring system powered by rectified radio-frequency energy or other forms of energy harvesting like body vibration and body heat.

Ring cavity for a Raman capillary waveguide amplifier

DOEpatents

Kurnit, N.A.

1981-01-27

A regenerative ring amplifier and regenerative ring oscillator are described which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO/sub 2/ laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplified Stokes signal is synchronous with the mode-locked spikes of the incoming CO/sub 2/ laser pump signal.

Ring cavity for a raman capillary waveguide amplifier

DOEpatents

Kurnit, Norman A.

1983-07-19

A regenerative ring amplifier and regenerative ring oscillator which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO.sub.2 laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplifier Stokes signal is synchronous with the mode-locked spikes of the incoming CO.sub.2 laser pump signal.

Cryogenic ultra-low-noise SiGe transistor amplifier.

PubMed

Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

2011-10-01

An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

Competing collinear and noncollinear interactions in chirped quasi-phase-matched optical parametric amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charbonneau-Lefort, Mathieu; Afeyan, Bedros; Fejer, M. M.

Chirped quasi-phase-matched optical parametric amplifiers (chirped QPM OPAs) are investigated experimentally. The measured collinear gain is constant over a broad bandwidth, which makes these devices attractive candidates for use in femtosecond amplifier systems. The experiment also shows that chirped QPM OPAs support noncollinear gain-guided modes. These modes can dominate the desired collinear gain and generate intense parametric fluorescence. Finally, design guidelines to mitigate these parasitic processes are discussed.

A parallel input composite transimpedance amplifier.

PubMed

Kim, D J; Kim, C

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

A parallel input composite transimpedance amplifier

NASA Astrophysics Data System (ADS)

Kim, D. J.; Kim, C.

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

A cooled 1- to 2-GHz balanced HEMT amplifier

NASA Technical Reports Server (NTRS)

Ortiz, Gerardo G.; Padin, Steven

1991-01-01

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

Fluorene- and benzofluorene-cored oligomers as low threshold and high gain amplifying media

NASA Astrophysics Data System (ADS)

Kazlauskas, Karolis; Kreiza, Gediminas; Bobrovas, Olegas; AdomÄ--nienÄ--, Ona; AdomÄ--nas, Povilas; Jankauskas, Vygintas; JuršÄ--nas, Saulius

2015-07-01

Deliberate control of intermolecular interactions in fluorene- and benzofluorene-cored oligomers was attempted via introduction of different-length alkyl moieties to attain high emission amplification and low amplified spontaneous emission (ASE) threshold at high oligomer concentrations. Containing fluorenyl peripheral groups decorated with different-length alkyl moieties, the oligomers were found to express weak concentration quenching of emission, yet excellent carrier drift mobilities (close to 10-2 cm2/V/s) in the amorphous films. Owing to the larger radiative decay rates (>1.0 × 109 s-1) and smaller concentration quenching, fluorene-cored oligomers exhibited down to one order of magnitude lower ASE thresholds at higher concentrations as compared to those of benzofluorene counterparts. The lowest threshold (300 W/cm2) obtained for the fluorene-cored oligomers at the concentration of 50 wt % in polymer matrix is among the lowest reported for solution-processed amorphous films in ambient conditions, what makes the oligomers promising for lasing application. Great potential in emission amplification was confirmed by high maximum net gain (77 cm-1) revealed for these compounds. Although the photostability of the oligomers was affected by photo-oxidation, it was found to be comparable to that of various organic lasing materials including some commercial laser dyes evaluated under similar excitation conditions.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Hwang, In H.; Stock, Larry V.

1988-01-01

A XeCl laser which was developed earlier for an iodine laser oscillator was modified in order to increase the output pulse energy of XeCl laser so that the iodine laser output energy could be increased. The electrical circuit of the XeCl laser was changed from a simple capacitor discharge circuit of the XeCl laser to a Marx system. Because of this improvement the output energy from the XeCl laser was increased from 60 mj to 80 mj. Subsequently, iodine laser output energy was increased from 100 mj to 3 mj. On the other hand, the energy storage capability and amplification characteristics of the Vortek solar simulator-pumped amplifier was calculated expecting the calculated amplification factor is about 2 and the energy extraction efficiency is 26 percent due to the very low input energy density to the amplifier. As a result of an improved kinetic modeling for the iodine solar simulator pumped power amplifier, it is found that the I-2 along the axis of the tube affects seriously the gain profile. For the gas i-C3F7I at the higher pressures, the gain will decrease due to the I-2 as the pumping intensity increases, and at these higher pressures an increase in flow velocity will increase the gain.

Noise-figure limit of fiber-optical parametric amplifiers and wavelength converters: experimental investigation

NASA Astrophysics Data System (ADS)

Tang, Renyong; Voss, Paul L.; Lasri, Jacob; Devgan, Preetpaul; Kumar, Prem

2004-10-01

Recent theoretical work predicts that the quantum-limited noise figure of a chi(3)-based fiber-optical parametric amplifier operating as a phase-insensitive in-line amplifier or as a wavelength converter exceeds the standard 3-dB limit at high gain. The degradation of the noise figure is caused by the excess noise added by the unavoidable Raman gain and loss occurring at the signal and the converted wavelengths. We present detailed experimental evidence in support of this theory through measurements of the gain and noise-figure spectra for phase-insensitive parametric amplification and wavelength conversion in a continuous-wave amplifier made from 4.4 km of dispersion-shifted fiber. The theory is also extended to include the effect of distributed linear loss on the noise figure of such a long-length parametric amplifier and wavelength converter.

Monitoring the WFC3/UVIS Relative Gain with Internal Flatfields

NASA Astrophysics Data System (ADS)

Fowler, J.; Baggett, S.

2017-03-01

The WFC3/UVIS gain stability has been monitored twice yearly. This project provides a new examination of gain stability, making use of the existing internal flatfield observations taken every three days (for the Bowtie monitor) for a regular look at relative gain stability. Amplifiers are examined for consistency both in comparison to each other and over time, by normalizing the B, C, and D amplifiers to A, and then plotting statistics for each of the three normalized amplifiers with time. We find minimal trends in these statistics, with a 0.02 - 0.2% change in mean amplifier ratio over 7.5 years. The trends in the amplifiers are well-behaved with the exception of the B/A ratio, which shows increased scatter in mean, median, and standard deviation. The cause of the scatter remains unclear though we find it is not dependent upon detector defects, filter features, or shutter effects, and is only observable after pixel flagging (both from the data quality arrays and outlier values) has been applied.

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Large area single-mode parity-time-symmetric laser amplifiers.

PubMed

Miri, Mohammad-Ali; LiKamWa, Patrik; Christodoulides, Demetrios N

2012-03-01

By exploiting recent developments associated with parity-time (PT) symmetry in optics, we here propose a new avenue in realizing single-mode large area laser amplifiers. This can be accomplished by utilizing the abrupt symmetry breaking transition that allows the fundamental mode to experience gain while keeping all the higher order modes neutral. Such PT-symmetric structures can be realized by judiciously coupling two multimode waveguides, one exhibiting gain while the other exhibits an equal amount of loss. Pertinent examples are provided for both semiconductor and fiber laser amplifiers. © 2012 Optical Society of America

Transverse pumped laser amplifier architecture

DOEpatents

Bayramian, Andrew James; Manes, Kenneth R.; Deri, Robert; Erlandson, Alvin; Caird, John; Spaeth, Mary L.

2015-05-19

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Transverse pumped laser amplifier architecture

DOEpatents

Bayramian, Andrew James; Manes, Kenneth; Deri, Robert; Erlandson, Al; Caird, John; Spaeth, Mary

2013-07-09

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

A clocked high-pass-filter-based offset cancellation technique for high-gain biomedical amplifiers

NASA Astrophysics Data System (ADS)

Pal, Dipankar; Goswami, Manish

2010-05-01

In this article, a simple offset cancellation technique based on a clocked high-pass filter with extremely low output offset is presented. The configuration uses the on-resistance of a complementary metal oxide semiconductor (CMOS) transmission gate (X-gate) and tunes the lower 3-dB cut-off frequency with a matched pair of floating capacitors. The results compare favourably with the more complex auto-zeroing and chopper stabilisation techniques of offset cancellation in terms of power dissipation, component count and bandwidth, while reporting inferior output noise performance. The design is suitable for use in biomedical amplifier systems for applications such as ENG-recording. The system is simulated in Spectre Cadence 5.1.41 using 0.6 μm CMOS technology and the total block gain is ∼83.0 dB while the phase error is <5°. The power consumption is 10.2 mW and the output offset obtained for an input monotone signal of 5 μVpp is 1.28 μV. The input-referred root mean square noise voltage between 1 and 5 kHz is 26.32 nV/√Hz.

E-band Nd 3+ amplifier based on wavelength selection in an all-solid micro-structured fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dawson, Jay W.; Kiani, Leily S.; Pax, Paul H.

Here, a Nd 3+ fiber amplifier with gain from 1376 nm to 1466 nm is demonstrated. This is enabled by a wavelength selective waveguide that suppresses amplified spontaneous emission between 850 nm and 1150 nm. It is shown that while excited state absorption (ESA) precludes net gain below 1375 nm with the exception of a small band from 1333 nm to 1350 nm, ESA diminishes steadily beyond 1375 nm allowing for the construction of an efficient fiber amplifier with a gain peak at 1400 nm and the potential for gain from 1375 nm to 1500 nm. A peak small signalmore » gain of 13.3 dB is measured at 1402 nm with a noise figure of 7.6 dB. Detailed measurements of the Nd 3+ emission and excited state absorption cross sections suggest the potential for better performance in improved fibers. Specifically, reduction of the fiber mode field diameter from 10.5 µm to 5.25 µm and reduction of the fiber background loss to <10 dB/km at 1400 nm should enable construction of an E-band fiber amplifier with a noise figure < 5 dB and a small signal gain > 20 dB over 30 nm of bandwidth. Such an amplifier would have a form factor and optical properties similar to current erbium fiber amplifiers, enabling modern fiber optic communication systems to operate in the E-band with amplifier technology similar to that employed in the C and L bands.« less

E-band Nd 3+ amplifier based on wavelength selection in an all-solid micro-structured fiber

DOE PAGES

Dawson, Jay W.; Kiani, Leily S.; Pax, Paul H.; ...

2017-03-13

Here, a Nd 3+ fiber amplifier with gain from 1376 nm to 1466 nm is demonstrated. This is enabled by a wavelength selective waveguide that suppresses amplified spontaneous emission between 850 nm and 1150 nm. It is shown that while excited state absorption (ESA) precludes net gain below 1375 nm with the exception of a small band from 1333 nm to 1350 nm, ESA diminishes steadily beyond 1375 nm allowing for the construction of an efficient fiber amplifier with a gain peak at 1400 nm and the potential for gain from 1375 nm to 1500 nm. A peak small signalmore » gain of 13.3 dB is measured at 1402 nm with a noise figure of 7.6 dB. Detailed measurements of the Nd 3+ emission and excited state absorption cross sections suggest the potential for better performance in improved fibers. Specifically, reduction of the fiber mode field diameter from 10.5 µm to 5.25 µm and reduction of the fiber background loss to <10 dB/km at 1400 nm should enable construction of an E-band fiber amplifier with a noise figure < 5 dB and a small signal gain > 20 dB over 30 nm of bandwidth. Such an amplifier would have a form factor and optical properties similar to current erbium fiber amplifiers, enabling modern fiber optic communication systems to operate in the E-band with amplifier technology similar to that employed in the C and L bands.« less

Diode amplifier of modulated optical beam power

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'yachkov, N V; Bogatov, A P; Gushchik, T I

2014-11-30

Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

Ring cavity for a Raman capillary waveguide amplifier

DOEpatents

Kurnit, N.A.

1983-07-19

Disclosed is a regenerative ring amplifier and regenerative ring oscillator which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO[sub 2] laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplifier Stokes signal is synchronous with the mode-locked spikes of the incoming CO[sub 2] laser pump signal. 6 figs.

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Reck, Theodore and; Schlecht, Erich; Lin, Robert; Deal, William

2012-01-01

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface.

PubMed

Yu, Zhanghao; Yang, Xi; Chung, SungWon

2018-01-29

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface

PubMed Central

Yang, Xi

2018-01-01

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183

Unimolecular rectifiers and proposed unimolecular amplifier.

PubMed

Metzger, Robert M

2003-12-01

The rectification by three molecules that form Langmuir-Blodgett monolayers between gold electrodes is reviewed, along with a proposal for the means to obtain gain in a unimolecular amplifier, the molecular analog of a bipolar junction transistor.

Gain and energy storage in holmium YLF

NASA Technical Reports Server (NTRS)

Storm, Mark E.; Deyst, John P.

1991-01-01

It is demonstrated that Q-switched holmium lasers are capable of high-gain and high-energy operation at 300 K. Small-signal gain coefficients of 0.50 and 0.12/cm have been measured in YLF and YAG, respectively. Small-signal gains of 0.50/cm are comparable to those achievable in Nd:YAG and are not typical of low-gain materials. This large gain in the Ho:YLF material is made possible by operating the amplifier in the ground state depletion mode. The amplifier performance data and associated analysis presented demonstrate that efficient energy storage is possible with very high excited state ion densities of the Ho 5I7 upper laser level. This is an important result since upconversion can limit the 5I7 population. Although upconversion was still present in this experiment, it was possible to achieve efficient energy storage, demonstrating that the problem is manageable even at high excitation densities in YLF.

Optically pre-amplified lidar-radar

NASA Astrophysics Data System (ADS)

Morvan, Loic; Dolfi, Daniel; Huignard, Jean-Pierre

2001-09-01

We present the concept of an optically pre-amplified intensity modulated lidar, where the modulation frequency is in the microwave domain (1-10 GHz). Such a system permits to combine directivity of laser beams with mature radar processing. As an intensity modulated or dual-frequency laser beam is directed on a target, the backscattered intensity is collected by an optical system, pass through an optical preamplifier, and is detected on a high speed photodiode in a direct detection scheme. A radar type processing permits then to extract range, speed and identification information. The association of spatially multimode amplifier and direct detection allows low sensitivity to atmospheric turbulence and large field of view. We demonstrated theoretically that optical pre-amplification can greatly enhance sensitivity, even in spatially multimode amplifiers, such as free-space amplifier or multimode doped fiber. Computed range estimates based on this concept are presented. Laboratory demonstrations using 1 to 3 GHz modulated laser sources and >20 dB gain in multimode amplifiers are detailed. Preliminary experimental results on range and speed measurements and possible use for large amplitude vibrometry will be presented.

Ignition feedback regenerative free electron laser (FEL) amplifier

DOEpatents

Kim, Kwang-Je; Zholents, Alexander; Zolotorev, Max

2001-01-01

An ignition feedback regenerative amplifier consists of an injector, a linear accelerator with energy recovery, and a high-gain free electron laser amplifier. A fraction of the free electron laser output is coupled to the input to operate the free electron laser in the regenerative mode. A mode filter in this loop prevents run away instability. Another fraction of the output, after suitable frequency up conversion, is used to drive the photocathode. An external laser is provided to start up both the amplifier and the injector, thus igniting the system.

Towards a THz backward wave amplifier in European OPTHER project

NASA Astrophysics Data System (ADS)

Dispenza, M.; Brunetti, F.; Cojocaru, C.-S.; de Rossi, A.; Di Carlo, A.; Dolfi, D.; Durand, A.; Fiorello, A. M.; Gohier, A.; Guiset, P.; Kotiranta, M.; Krozer, V.; Legagneux, P.; Marchesin, R.; Megtert, S.; Bouamrane, F.; Mineo, M.; Paoloni, C.; Pham, K.; Schnell, J. P.; Secchi, A.; Tamburri, E.; Terranova, M. L.; Ulisse, G.; Zhurbenko, V.

2010-10-01

Within the EC funded international project OPTHER (OPtically Driven TeraHertz AmplifiERs) a considerable technological effort is being undertaken, in terms of technological development, THz device design and integration. The ultimate goal is to develop a miniaturised THz amplifier based on vacuum-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met with a proper device configuration and careful optimization of the different parts of the amplifier. Two parallel schemes will be employed for amplifier realisation: THz Drive Signal Amplifier and Optically Modulated Beam THz Amplifier.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Hysteretic Flux Response and Nondegenerate Gain of Flux-Driven Josephson Parametric Amplifiers

NASA Astrophysics Data System (ADS)

Pogorzalek, Stefan; Fedorov, Kirill G.; Zhong, Ling; Goetz, Jan; Wulschner, Friedrich; Fischer, Michael; Eder, Peter; Xie, Edwar; Inomata, Kunihiro; Yamamoto, Tsuyoshi; Nakamura, Yasunobu; Marx, Achim; Deppe, Frank; Gross, Rudolf

2017-08-01

Josephson parametric amplifiers (JPAs) have become key devices in quantum science and technology with superconducting circuits. In particular, they can be utilized as quantum-limited amplifiers or as a source of squeezed microwave fields. Here, we report on the detailed measurements of five flux-driven JPAs exhibiting a hysteretic dependence of the resonant frequency on the applied magnetic flux. We model the measured characteristics by numerical simulations based on the two-dimensional potential landscape of the dc superconducting quantum interference devices, which provide the JPA nonlinearity for a nonzero screening parameter βL>0 and demonstrate excellent agreement between the numerical results and the experimental data. Furthermore, we study the nondegenerate response of different JPAs and accurately describe the experimental results with our theory.

Gain drift compensation with no-feedback-loop developed for the X-IFU/ATHENA readout chain

NASA Astrophysics Data System (ADS)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Goldwurm, A.

2016-07-01

The focal plane of the X-ray Integral Field Unit (X-IFU) instrument of the Athena observatory is composed of about 4000 micro-calorimeters. These sensors, based on superconducting Transition Edge Sensors, are read out through a frequency multiplexer and a base-band feedback to linearize SQUIDs. However, the loop gain of this feedback is lower than 10 in the modulated TES signal bandwidth, which is not enough to fix the gain of the full readout chain. Calibration of the instrument is planned to be done at a time scale larger than a dozen minutes and the challenging energy resolution goal of 2.5 eV at 6 keV will probably require a gain stability larger than 10-4 over a long duration. A large part of this gain is provided by a Low-Noise Amplifier (LNA) in the Warm Front-End Electronics (WFEE). To reach such gain stability over more than a dozen minutes, this non-cooled amplifier has to cope with the temperature and supply voltage variations. Moreover, mainly for noise reasons, common large loop gain with feedback can not be used. We propose a new amplifier topology using diodes as loads of a differential amplifier to provide a fixed voltage gain, independent of the temperature and of the bias fluctuations. This amplifier is designed using a 350 nm SiGe BiCMOS technology and is part of an integrated circuit developed for the WFEE. Our simulations provide the expected gain drift and noise performances of such structure. Comparison with standard resistive loaded differential pair clearly shows the advantages of the proposed amplifier topology with a gain drift decreasing by more than an order of magnitude. Performances of this diode loaded amplifier are discussed in the context of the X-IFU requirements.

MMIC HEMT Power Amplifier for 140 to 170 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro

2003-01-01

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

Bandwidth tunable amplifier for recording biopotential signals.

PubMed

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Josephson Parametric Reflection Amplifier with Integrated Directionality

NASA Astrophysics Data System (ADS)

Westig, M. P.; Klapwijk, T. M.

2018-06-01

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics. It consists of a one-wavelength-long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson-junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally approximately 1.3 photons per second per Hertz of bandwidth. We predict a factor of 4 increase in dynamic range compared to conventional Josephson parametric amplifiers.

Factors limiting the sensitivity and dynamic range of a seismic system employing analog magnetic tape recording and a seismic amplifier with adjustable gain settings and several output levels

USGS Publications Warehouse

Eaton, Jerry P.; Van Schaack, John R.

1977-01-01

In the course of modernizing the low-speed-tape-recorder portable seismic systems and considering the possibilities for the design of a cassette-tape-recorder seismic refraction system, the factors that limit the sensitivity and dynamic range of such systems have been reviewed. These factors will first be stated briefly, and then their influence on systems such as the new 5-day-tape seismic system will be examined in more detail. To fix ideas, we shall assume that the system consists of the following elements: 1. A seismic sensor: usually a moving coil inertial seismometer with a period of about 1 second, a coil resistance of about 5000 ohms, and an effective motor constant of 1.0 V/cm/sec (across a 10K load terminating the seismometer sensitivity-and-damping-adjustment resistive network). 2. A seismic amplifier/voltage controlled oscillator unit made up of the following components: a) A fixed gain preamplifier with an input resistance of 10K and an internal noise level of 0.5 muVpp referred to the preamp input (0.1 Hz <= freq. <= 30 hz). b) An adjustable gain (0 to 42 db in 6 db steps) intermediate amplifier c) One or more fixed gain output amplifiers. d) Two sections of 6 db/octave bandpass filter serving to couple the 3 amplifier stages together. e) Voltage controlled oscillators for each output amplifier to produce modulated FM carriers for recording on separate tape tracks or modulated FM subcarriers for subsequent multiplexing and direct recording on tape in the California Network format. 3. An analog magnetic tape recorder: e.g. the PI 5100 (15/80 ips recording in the FM mode or in the direct mode with the 'broad-band' variant-of the Cal Net multiplex system, or 15/16 ips recording in the direct mode with the standard Cal Net multiplex system), or the Sony TC-126 cassette recorder operating in the direct record mode with the standard Cal Net multiplex system. 4. Appropriate magnetic tape playback equipment: e.g., the Bell and Howell 3700-B for the PI-5100 or

Broadband Characterization of a 100 to 180 GHz Amplifier

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Deal, W. R.; Mei, X. B.; Lai, R.

2007-01-01

Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

Two-Stage, 90-GHz, Low-Noise Amplifier

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Gaier, Todd C.; Xenos, Stephanie; Soria, Mary M.; Kangaslahti, Pekka P.; Cleary, Kieran A.; Ferreira, Linda; Lai, Richard; Mei, Xiaobing

2010-01-01

A device has been developed for coherent detection of the polarization of the cosmic microwave background (CMB). A two-stage amplifier has been designed that covers 75-110 GHz. The device uses the emerging 35-nm InP HEMT technology recently developed at Northrop Grumman Corporation primarily for use at higher frequencies. The amplifier has more than 18 dB gain and less than 35 K noise figure across the band. These devices have noise less than 30 K at 100 GHz. The development started with design activities at JPL, as well as characterization of multichip modules using existing InP. Following processing, a test campaign was carried out using single-chip modules at 100 GHz. Successful development of the chips will lead to development of multichip modules, with simultaneous Q and U Stokes parameter detection. This MMIC (monolithic microwave integrated circuit) amplifier takes advantage of performance improvements intended for higher frequencies, but in this innovation are applied at 90 GHz. The large amount of available gain ultimately leads to lower possible noise performance at 90 GHz.

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

2008-01-01

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

A monolithic patch-clamping amplifier with capacitive feedback.

PubMed

Prakash, J; Paulos, J J; Jensen, D N

1989-03-01

Patch-clamping is an established method for directly measuring ionic transport through cellular membranes with sufficient resolution to observe open/close transitions of individual channel molecules. This paper describes an alternative technique for patch-clamping which uses a capacitor as the transimpedance element. This approach eliminates bandwidth and saturation limitations experienced with resistive patch-clamping amplifiers. A complete monolithic design featuring an on-chip operational amplifier, a capacitor array with gain-ranging from 30 pF down to 0.03 pF, and reset and gain ranging switches has been fabricated using 5 microns CMOS technology. It is shown that the voltage noise of the CMOS operational amplifier limits the overall noise performance, but that performance competitive with conventional instruments can be achieved over a 10 kHz bandwidth, at least for small input capacitances (less than or equal to 5 pF). Results are presented along with an analysis and comparison of noise performance using both resistive and capacitive elements.

Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

2016-10-01

Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

Research of energy characteristics of power amplifier containing KNFS Nd:phosphate glass slabs and MIRO Silver foil reflectors at the “Luch” facility

NASA Astrophysics Data System (ADS)

Belov, I. A.; Bel'kov, S. A.; Voronich, I. N.; Garanin, S. G.; Derkach, V. N.; Koshechkin, S. V.; Lysov, M. I.; Markov, S. S.; Savkin, S. V.

2016-09-01

The amplifier elements upgrade at the “Luch” laser facility was carried out. Measurements showed that the upgrade of the amplifier elements resulted in the amplifier's small signal gain coefficient K0 increase from 12.9% to 14.3% depending on the capacitor charging voltage; the linear gain coefficient increase was about g0 ≈ (6-8)%. Full-scale laser experiments at the facility showed the power amplifier gain coefficient increase consistent with active medium gain coefficient measurement results.

Wideband pulse amplifiers for the NECTAr chip

NASA Astrophysics Data System (ADS)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

Performance of a High-Concentration Erbium-Doped Fiber Amplifier with 100 nm Amplification Bandwidth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hajireza, P.; Shahabuddin, N. S.; Abbasi-Zargaleh, S.

2010-07-07

Increasing demand for higher bandwidth has driven the need for higher Wavelength Division Multiplexing (WDM) channels. One of the requirements to achieve this is a broadband amplifier. This paper reports the performance of a broadband, compact, high-concentration and silica-based erbium-doped fiber amplifier. The amplifier optimized to a 2.15 m long erbium-doped fiber with erbium ion concentration of 2000 ppm. The gain spectrum of the amplifier has a measured amplification bandwidth of 100 nm using a 980 nm laser diode with power of 150 mW. This silica-based EDFA shows lower noise figure, higher gain and wider bandwidth in shorter wavelengths comparedmore » to Bismuth-based EDFA with higher erbium ion concentration of 3250 ppm at equivalent EDF length. The silica-based EDF shows peak gain at 22 dB and amplification bandwidth between 1520 nm and 1620 nm. The lowest noise figure is 5 dB. The gain is further improved with the implementation of enhanced EDFA configurations.« less

Small form-factor VGA camera with variable focus by liquid lens

NASA Astrophysics Data System (ADS)

Oikarinen, Kari A.; Aikio, Mika

2010-05-01

We present the design of a 24 mm long variable focus lens for 1/4" sensor. The chosen CMOS color sensor has VGA (640×480) resolution and 5.6 μm pixel size. The lens utilizes one Varioptic Arctic 320 liquid lens that has a voltage-controllable focal length due to the electrowetting effect. There are no mechanical moving parts. The principle of operation of the liquid lens is explained briefly. We discuss designing optical systems with this type of lens. This includes a modeling approach that allows entering a voltage value to modify the configuration of the liquid lens. The presented design consists only of spherical glass surfaces. The choice to use spherical surfaces was made in order to decrease the costs of manufacturing and provide more predictable performance by the better established method. Fabrication tolerances are compensated by the adjustability of the liquid lens, further increasing the feasibility of manufacturing. The lens is manufactured and assembled into a demonstrator camera. It has an f-number of 2.5 and 40 degree full field of view. The effective focal length varies around 6 millimeters as the liquid lens is adjusted. In simulations we have achieved a focus distance controllable between 20 millimeters and infinity. The design differs from previous approaches by having the aperture stop in the middle of the system instead of in front.

Up-converted 1/f PM and AM noise in linear HBT amplifiers.

PubMed

Ferre-Pikal, Eva S; Savage, Frederick H

2008-08-01

In this paper we describe a technique to predict the 1/f phase modulation (PM) and 1/f amplitude modulation (AM) noise due to up-conversion of 1/f baseband current noise in microwave heterojunction bipolar transistor (HBT) amplifiers. We obtain an accurate model for the amplifier and find the expression for voltage gain in terms of DC bias, transistor parameters, and circuit components. Theoretical 1/f PM and AM noise sensitivities to 1/f baseband current noise are then found by applying the definitions of PM and AM noise to the gain expression of the amplifier. Measurements of PM and AM sensitivities at 500 MHz and 1 GHz were in good agreement with the values predicted by theory, verifying the validity of this technique. This method can be used to optimize amplifier design for low PM and AM noise. We show that the amplifier PM noise can be reduced by 9 dB by adjusting the value of the input coupling capacitor.

Ultrasonographic evaluation of equine tendons: a quantitative in vitro study of the effects of amplifier gain level, transducer-tilt, and transducer-displacement.

PubMed

van Schie, J T; Bakker, E M; van Weeren, P R

1999-01-01

The objective of the in vitro experiments described in this paper was to quantify the effects of some instrumental variables on the quantitative evaluation, by means of first-order gray-level statistics, of ultrasonographic images of equine tendons. The experiments were done on three isolated equine superficial digital flexor tendons that were mounted in a frame and submerged in a waterbath. Sections with either normal tendon tissue, an acute lesion, or a chronic scar, were selected. In these sections, the following experiments were done: 1) a gradual increase of total amplifier gain output subdivided in 12 equal steps; 2) a transducer tilt plus or minus 3 degrees from perpendicular, with steps of 1 degree; and 3) a transducer displacement along, and perpendicular to, the tendon long axis, with 16 steps of 0.25 mm each. Transverse ultrasonographic images were collected, and in the regions of interest (ROI) first-order gray-level statistics were calculated to quantify the effects of each experiment. Some important observations were: 1) the total amplifier gain output has a substantial influence on the ultrasonographic image; for example, in the case of an acute lesion, a low gain setting results in an almost completely black image; whereas, with higher gain settings, a marked "filling in" effect on the lesion can be observed; 2) the relative effects of the tilting of the transducer are substantial in normal tendon tissue (18%) and chronic scar (12%); whereas, in the event of an acute lesion, the effects on the mean gray level are dramatic (40%); and 3) the relative effects of displacement of the transducer are small in normal tendon tissue, but on the other hand, the mean gray-level changes 7% in chronic scar, and even 20% in an acute lesion. In general, slight variations in scanner settings and transducer handling can have considerable effects on the gray levels of the ultrasonographic image. Furthermore, there is a strong indication that this quantitative method

A 500-600 MHz GaN power amplifier with RC-LC stability network

NASA Astrophysics Data System (ADS)

Ma, Xinyu; Duan, Baoxing; Yang, Yintang

2017-08-01

A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

2.4 GHz CMOS power amplifier with mode-locking structure to enhance gain.

PubMed

Lee, Changhyun; Park, Changkun

2014-01-01

We propose a mode-locking method optimized for the cascode structure of an RF CMOS power amplifier. To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. To prove the feasibility of the proposed structure, we designed a 2.4 GHz CMOS power amplifier with a 0.18 μm RFCMOS process for polar transmitter applications. The measured power added efficiency is 34.9%, while the saturated output power is 23.32 dBm. The designed chip size is 1.4 × 0.6 mm(2).

Optical parametric amplifiers using chirped quasi-phase-matching gratings I: practical design formulas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charbonneau-Lefort, Mathieu; Afeyan, Bedros; Fejer, M. M.

Optical parametric amplifiers using chirped quasi-phase-matching (QPM) gratings offer the possibility of engineering the gain and group delay spectra. We give practical formulas for the design of such amplifiers. We consider linearly chirped QPM gratings providing constant gain over a broad bandwidth, sinusoidally modulated profiles for selective frequency amplification and a pair of QPM gratings working in tandem to ensure constant gain and constant group delay at the same time across the spectrum. Finally, the analysis is carried out in the frequency domain using Wentzel–Kramers–Brillouin analysis.

High-energy, ceramic-disk Yb:LuAG laser amplifier.

PubMed

Siebold, M; Loeser, M; Roeser, F; Seltmann, M; Harzendorf, G; Tsybin, I; Linke, S; Banerjee, S; Mason, P D; Phillips, P J; Ertel, K; Collier, J C; Schramm, U

2012-09-24

We report the first short-pulse amplification results to several hundred millijoule energies in ceramic Yb:LuAG. We have demonstrated ns-pulse output from a diode-pumped Yb:LuAG amplifier at a maximum energy of 580 mJ and a peak optical-to-optical efficiency of 28% at 550 mJ. In cavity dumped operation of a nanosecond oscillator we obtained 1 mJ at up to 100 Hz repetition rate. A gain bandwidth of 5.4 nm was achieved at room temperature by measuring the small-signal single-pass gain. Furthermore, we compared our results with Yb:YAG within the same amplifier system.

Single flux quantum voltage amplifiers

NASA Astrophysics Data System (ADS)

Golomidov, Vladimir; Kaplunenko, Vsevolod; Khabipov, Marat; Koshelets, Valery; Kaplunenko, Olga

The novel elements of the Rapid Single Flux Quantum (RSFQ) logic family — a Quasi Digital Voltage Parallel and Series Amplifiers (QDVA) have been computer simulated, designed and experimentally investigated. The Parallel QDVA consists of six stages and provides multiplication of the input voltage with factor five. The output resistance of the QDVA is five times larger than the input so this amplifier seems to be a good matching stage between RSFQL and usual semiconductor electronics. The series QDVA provides a gain factor four and involves two doublers connected by transmission line. The proposed parallel QDVA can be integrated on the same chip with a SQUID sensor.

Amplifiers of free-space terahertz radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

Here, amplifiers of free-space radiation are quite useful, especially in spectral ranges where the radiation is weak and sensitive detectors are hard to come by. A preamplification of the said weak radiation signal will significantly boost the S/N ratio in remote sensing and imaging applications. This is especially true in the terahertz (THz) range where the radiation signal is often weak and sensitive detectors require the cooling of liquid helium. Although quantum cascade structures are promising for providing amplification in the terahertz band from 2 to 5 THz, a THz amplifier has been demonstrated in an integrated form, in whichmore » the source is in close proximity to the amplifier, which will not be suitable for the aforementioned applications. Here we demonstrate what we believe is a novel approach to achieve significant amplification of free-space THz radiation using an array of short-cavity, surface-emitting THz quantum cascade lasers operating marginally below the lasing threshold as a Fabry–Perot amplifier. This free-space “slow light” amplifier provides 7.5 dB(×5.6) overall gain at ~3.1 THz. The proposed devices are suitable for low-noise pre-amplifiers in heterodyne detection systems and for THz imaging systems. With the sub-wavelength pixel size of the array, the reflective amplifier can also be categorized as active metasurface, with the ability to amplify or absorb specific frequency components of the input THz signal.« less

Amplifiers of free-space terahertz radiation

DOE PAGES

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

2017-07-20

Here, amplifiers of free-space radiation are quite useful, especially in spectral ranges where the radiation is weak and sensitive detectors are hard to come by. A preamplification of the said weak radiation signal will significantly boost the S/N ratio in remote sensing and imaging applications. This is especially true in the terahertz (THz) range where the radiation signal is often weak and sensitive detectors require the cooling of liquid helium. Although quantum cascade structures are promising for providing amplification in the terahertz band from 2 to 5 THz, a THz amplifier has been demonstrated in an integrated form, in whichmore » the source is in close proximity to the amplifier, which will not be suitable for the aforementioned applications. Here we demonstrate what we believe is a novel approach to achieve significant amplification of free-space THz radiation using an array of short-cavity, surface-emitting THz quantum cascade lasers operating marginally below the lasing threshold as a Fabry–Perot amplifier. This free-space “slow light” amplifier provides 7.5 dB(×5.6) overall gain at ~3.1 THz. The proposed devices are suitable for low-noise pre-amplifiers in heterodyne detection systems and for THz imaging systems. With the sub-wavelength pixel size of the array, the reflective amplifier can also be categorized as active metasurface, with the ability to amplify or absorb specific frequency components of the input THz signal.« less

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

NASA Astrophysics Data System (ADS)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

Amplifiers for bioelectric events: a design with a minimal number of parts.

PubMed

MettingVanRijn, A C; Peper, A; Grimbergen, C A

1994-05-01

A design for an amplifier for bioelectric events is presented that has fewer parts than conventional designs. The design allows the construction of amplifiers of a high quality in terms of noise and common mode rejection, with reduced dimensions and with a lower power consumption. Gain, bandwidth and number of channels are easily adapted to a wide range of biomedical applications. An application example is given in the form of a multichannel EEG amplifier (gain is 20,000), in which each channel consists of three operational amplifiers (one single and one dual), six resistors and two capacitors. The equivalent input noise voltage and current are 0.15 microVrms and 1 pArms, respectively, in a bandwidth of 0.2-40 Hz, and a common mode rejection ratio of 136 dB is achieved without trimming.

X-band ultralow-noise maser amplifier performance

NASA Technical Reports Server (NTRS)

Glass, G. W.; Ortiz, G. G.; Johnson, D. L.

1994-01-01

Noise temperature measurements of an 8440-MHz ultralow noise maser amplifier (ULNA) have been performed at subatmospheric, liquid-helium temperatures. The traveling-wave maser was operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.43 +/- 0.16 K at a physical temperature of 1.60 K. At this physical temperature, the observed gain per centimeter of ruby was 4.9 dB/cm. The amplifier had a 3-dB bandwidth of 76 MHz.

Low-Noise MMIC Amplifiers for 120 to 180 GHz

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Peralta, Alejandro; Bayuk, Brian; Grundbacher, Ron; Oliver, Patricia; Cavus, Abdullah; Liu, Po-Hsin

2009-01-01

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Beyond G-band : a 235 GHz InP MMIC amplifier

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

2005-01-01

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain

PubMed Central

2014-01-01

We propose a mode-locking method optimized for the cascode structure of an RF CMOS power amplifier. To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of a typical mode-locking structure. To prove the feasibility of the proposed structure, we designed a 2.4 GHz CMOS power amplifier with a 0.18 μm RFCMOS process for polar transmitter applications. The measured power added efficiency is 34.9%, while the saturated output power is 23.32 dBm. The designed chip size is 1.4 × 0.6 mm2. PMID:25045755

Optomechanical transistor with mechanical gain

NASA Astrophysics Data System (ADS)

Zhang, X. Z.; Tian, Lin; Li, Yong

2018-04-01

We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

NASA Technical Reports Server (NTRS)

Taub, Susan R.; Simons, Rainee N.

1992-01-01

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2010 CFR

2010-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2012 CFR

2012-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2014 CFR

2014-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2011 CFR

2011-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2013 CFR

2013-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

Amplifier circuit operable over a wide temperature range

DOEpatents

Kelly, Ronald D.; Cannon, William L.

1979-01-01

An amplifier circuit having stable performance characteristics over a wide temperature range from approximately 0.degree. C up to as high as approximately 500.degree. C, such as might be encountered in a geothermal borehole. The amplifier utilizes ceramic vacuum tubes connected in directly coupled differential amplifier pairs having a common power supply and a cathode follower output stage. In an alternate embodiment, for operation up to 500.degree. C, positive and negative power supplies are utilized to provide improved gain characteristics, and all electrical connections are made by welding. Resistor elements in this version of the invention are specially heat treated to improve their stability with temperature.

Highly Efficient Amplifier for Ka-Band Communications

NASA Technical Reports Server (NTRS)

1996-01-01

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power

FEL amplifier performance in the Compton regime

NASA Astrophysics Data System (ADS)

Cover, R. A.; Bhowmik, A.

1984-01-01

The Kroll-Morton-Rosenbluth equations of motion for electrons in a linearly polarized, tapered wiggler are utilized to describe gain in free-electron laser amplifiers. The three-dimensional amplifier model includes the effects of density variation in the electron beam, off-axis variations in the wiggler magnetic field, and betatron oscillations. The input electromagnetic field is injected and subsequently propagated within the wiggler by computing the Fresnel-Kirchhoff diffraction integral using the Gardner-Fresnel-Kirchhoff algorithm. The injected optical beam used in evaluating amplifier performance is initially a Gaussian which in general may be astigmatic. The importance of the above effects on extraction efficiency is computed both with rigorous three-dimensional electromagnetic wave propagation and a Gaussian treatment of the field.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

PubMed

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems

PubMed Central

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-01-01

The impact of high-voltage–high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between −13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers. PMID:29065526

An Analysis on a Dynamic Amplifier and Calibration Methods for a Pseudo-Differential Dynamic Comparator

NASA Astrophysics Data System (ADS)

Paik, Daehwa; Miyahara, Masaya; Matsuzawa, Akira

This paper analyzes a pseudo-differential dynamic comparator with a dynamic pre-amplifier. The transient gain of a dynamic pre-amplifier is derived and applied to equations of the thermal noise and the regeneration time of a comparator. This analysis enhances understanding of the roles of transistor's parameters in pre-amplifier's gain. Based on the calculated gain, two calibration methods are also analyzed. One is calibration of a load capacitance and the other is calibration of a bypass current. The analysis helps designers' estimation for the accuracy of calibration, dead-zone of a comparator with a calibration circuit, and the influence of PVT variation. The analyzed comparator uses 90-nm CMOS technology as an example and each estimation is compared with simulation results.

Low-Noise Amplifier for 100 to 180 GHz

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Pukala, David; Fung, King Man; Gaier, Todd; Mei, Xiaobing; Lai, Richard; Deal, William

2009-01-01

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Gaier, Todd; Soria, Mary; ManFung, King; Deal, William; Mei, Gerry; Radisic, Vesna; Lai, Richard

2009-01-01

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Gm-Realization of Controlled-Gain Current Follower Transconductance Amplifier

PubMed Central

Tangsrirat, Worapong

2013-01-01

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (G m s) as core circuits. The advantage of this element is that the current transfer ratios (i z/i p and i x/i z) can be tuned electronically and linearly by adjusting external DC bias currents. The circuit is designed and analyzed in 0.35 μm TSMC CMOS technology. Simulation results for the circuit with ±1.25 V supply voltages show that it consumes only 0.43 mw quiescent power with 70 MHz bandwidth. As an application example, a current-mode KHN biquad filter is designed and simulated. PMID:24381513

Amplification and noise properties of an erbium-doped multicore fiber amplifier.

PubMed

Abedin, K S; Taunay, T F; Fishteyn, M; Yan, M F; Zhu, B; Fini, J M; Monberg, E M; Dimarcello, F V; Wisk, P W

2011-08-15

A multicore erbium-doped fiber (MC-EDF) amplifier for simultaneous amplification in the 7-cores has been developed, and the gain and noise properties of individual cores have been studied. The pump and signal radiation were coupled to individual cores of MC-EDF using two tapered fiber bundled (TFB) couplers with low insertion loss. For a pump power of 146 mW, the average gain achieved in the MC-EDF fiber was 30 dB, and noise figure was less than 4 dB. The net useful gain from the multicore-amplifier, after taking into consideration of all the passive losses, was about 23-27 dB. Pump induced ASE noise transfer between the neighboring channel was negligible. © 2011 Optical Society of America

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Design and Analysis of In0.53Ga0.47As/InP Symmetric Gain Optoelectronic Mixers

DTIC Science & Technology

2010-01-01

Adding gain to the OEM allows the following transimpedance amplifier ?s gain to be reduced, increasing bandwidth and improving the system?s noise...following transimpedance ampli- fier’s gain to be reduced, increasing bandwidth and improving the system’s noise performance. A sym- metric gain...is also obtained. As the OEM output is the low frequency difference signal, the gain of the following trans- impedance amplifier (TZA) can be increased

Measurement of characteristic parameters of 10 Gb/s bidirectional optical amplifier for XG-PON

NASA Astrophysics Data System (ADS)

Rakkammee, Suchaj; Boriboon, Budsara; Worasucheep, Duang-rudee; Wada, Naoya

2018-03-01

This research experimentally measured the characteristic parameters of 10 Gb/s bidirectional optical amplifier: (1) operating wavelength range, (2) small signal gain, (3) Polarization Dependent Loss (PDL), and (4) power consumption. Bidirectional amplifiers are the key component to extend coverage area as well as increase a number of users in Passive Optical Networks (PON). According to 10-Gigabit-capable PON or XG-PON standard, the downstream and upstream wavelengths are 1577 nm and 1270 nm respectively. Thus, our bidirectional amplifier consists of an Erbium Doped Fiber Amplifier (EDFA) and a Semiconductor Optical Amplifier (SOA) for downstream and upstream wavelength transmissions respectively. The operating wavelengths of EDFA and SOA are measured to be from 1570 nm to 1588 nm and 1263 nm to 1280 nm respectively. To measure gain, the input wavelengths of EDFA and SOA were fixed at 1577 nm and 1271 nm respectively, while their input powers were reduced by a variable optical attenuator. The small signal gain of EDFA is 22.5 dB at 0.15 Ampere pump current, whereas the small signal gain of SOA is 7.06 dB at 0.325 Ampere pump current. To measure PDL, which is a difference in output powers at various State of Polarization (SoP) of input signal, a polarization controller was inserted before amplifier to alter input SoP. The measured PDL of EDFA is insignificant with less than 0.1 dB. In contrast, the measured PDL of SOA is as large as 33 dB, indicating its strong polarization dependence. The total power consumptions were measured to be 1.5675 Watt.

Ultra-broadband amplification properties of Ni2+-doped glass-ceramics amplifiers.

PubMed

Jiang, Chun

2009-04-13

The energy level, transition configuration and mathematical model of Ni(2+)-doped glass-ceramics amplifiers are presented for the first time, to the best of one's knowledge. A quasi-three-level system is employed to model the gain and noise characteristics of the doped system, and the rate and power propagation equations of the mathematical model are solved to analyze the effect of the active ion concentration, fiber length, pump power as well as thermal-quenching on the gain spectra. It is shown that our model is in agreement with experimental result, and when excited at longer wavelength, the center of gain spectra of the amplifier red shifts, the ultra-broad band room-temperature gain spectra can cover 1.25-1.65 microm range for amplification of signal in the low-loss windows of the all-wave fiber without absorption peak caused by OH group.

Symmetric Gain Optoelectronic Mixers for LADAR

DTIC Science & Technology

2008-12-01

photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance ...output is the low frequency difference signal, several orders of magnitude lower than the LO signal. Therefore, the gain of the transimpedance ... amplifier (TZA) following the photodetector can be increased, improving LADAR range. The metal-semiconductor- metal (MSM) Schottky detector is such a

Batteryless Electroencephalography (EEG): Subthreshold Voltage System-on-a-Chip (SoC) Design for Neurophysiological Measurement

DTIC Science & Technology

2015-03-01

example, be harvested via thermoelectric coupling requiring only a 1 °C temperature gradient (supplied by the human scalp at ambient room...controller. The amplifier chain will consist of a differential low-noise amplifier (LNA) with digitally modulated , voltage-offset control and a variable...result in decreased vertical resolution of the digitized signal, even in conjunction with the VOC/VGA modulation described above. Figure 4 shows

High-gain EDFA using ASE suppression: numerical simulation and experimental characterization

NASA Astrophysics Data System (ADS)

Woellner, Eudes F.; Fugihara, Meire C.; Vendramin, Marcio; Chitz, Edson; Kalinowski, Hypolito J.; Pontes, Maria J.

2001-08-01

A single stage, bi-directionally pumped Erbium Doped Fiber Amplifier is studied, using a scheme that reduces the counter propagating ASE, avoiding self saturation due to ASE. The amplifier is numerically simulated and experimentally characterized. Gain, saturation and polarization dependence measurements are carried to compare with simulated results. Transient response is simulated to verify the amplifier performance in cable television distribution network.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, David M.

1996-01-01

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit.

Gain drift compensation with no feedback-loop developed for the X-Ray Integral Field Unit/ATHENA readout chain

NASA Astrophysics Data System (ADS)

Prêle, Damien; Voisin, Fabrice; Beillimaz, Cyril; Chen, Si; Goldwurm, Andrea

2016-10-01

The focal plane of the X-Ray Integral Field Unit (X-IFU) instrument of the Advanced Telescope for High-Energy Astrophysics observatory is composed of 3840 microcalorimeters. These sensors, based on superconducting transition edge sensors (TES), are read out through a frequency multiplexer. A "base-band feedback" suppresses all the carriers of the multiplexed signal in the superconducting quantum interference devices input coil (cryogenic readout). However, the loop gain of this feedback is too small (less than 10 in the present baseline of the phase A mission) to strongly compensate the readout gain drifts. An onboard x-ray source is considered to calibrate the gain of the full instrument. However, in-flight calibration time must be minimized, which leads to a requirement on the gain stability larger than 10-4 over a long duration (between each calibration) to reach the challenging energy resolution goal of 2.5 eV at 6 keV of the X-IFU. A significant part of this gain is provided by a low-noise amplifier in the warm front-end electronics (WFEE). To reach such gain stability over more than a dozen minutes, this noncooled amplifier has to cope with the temperature and supply voltage variations. Moreover, mainly for noise reasons, a common large loop gain with feedback cannot be used. We propose a new amplifier topology using diodes as loads of a differential amplifier to provide a fixed voltage gain, independent of the temperature and of the bias fluctuations. This amplifier is designed using 350-nm SiGe BiCMOS technology and is part of an integrated circuit developed for the WFEE. Our simulations provide the expected gain and noise performances. Comparison with standard resistive loaded differential pair clearly shows the advantages of the proposed amplifier topology with a gain drift decreased by more than an order of magnitude. Performances of this diode loaded amplifier are discussed in the context of the X-IFU requirements.

High-power microwave amplifier based on overcritical relativistic electron beam without external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurkin, S. A., E-mail: KurkinSA@gmail.com; Koronovskii, A. A.; Saratov State Technical University, Politechnicheskaja 77, Saratov 410028

2015-04-13

The high-power scheme for the amplification of powerful microwave signals based on the overcritical electron beam with a virtual cathode (virtual cathode amplifier) has been proposed and investigated numerically. General output characteristics of the virtual cathode amplifier including the dependencies of the power gain on the input signal frequency and amplitude have been obtained and analyzed. The possibility of the geometrical working frequency tuning over the range about 8%–10% has been shown. The obtained results demonstrate that the proposed virtual cathode amplifier scheme may be considered as the perspective high-power microwave amplifier with gain up to 18 dB, and with themore » following important advantages: the absence of external magnetic field, the simplicity of construction, the possibility of geometrical frequency tuning, and the amplification of relatively powerful microwave signals.« less

Broadband parametric amplifiers based on nonlinear kinetic inductance artificial transmission lines

NASA Astrophysics Data System (ADS)

Chaudhuri, S.; Li, D.; Irwin, K. D.; Bockstiegel, C.; Hubmayr, J.; Ullom, J. N.; Vissers, M. R.; Gao, J.

2017-04-01

We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loading and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 Ω characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.

Test results for the 201.25 MHZ tetrode power amplifier at LANSCE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyles, J. T.; Archuletta, S.; Davis, J. L.

2004-01-01

A new RF amplifier has been constructed for use as the intermediate power amplifier stage for the 201.25 MHz Alvarez DTL at the Los Alamos Neutron Science Center (LANSCE). It is part of a larger upgrade to replace the entire RF plant with a new generation of components. The new RF power system under development will enable increased peak power with higher duty factor. The first tank requires over 400 kW of RF power. This can be satisfied using the TH781 tetrode in a THALES cavity amplifier. The same stage will be also used to drive a TH628 Diacrode(reg. sign)more » final power amplifier for each of the three remaining DTL tanks. In this application, it will only be required to deliver approximately 150 kW of peak power. Details of the system design, layout for DTL 1, and test results will be presented. The Thales cavity amplifier and TH78I tetrode have been tested for two upcoming requirements at LANSCE. As an IPA to drive a future TH628 Diacrode(reg. sign) FPA with 120-150 kW, the amplifier provided over 16 dB power gain with 50% efficiency or better. As a stand-alone FPA to drive a 5 MeV Alvarez DTI, tank, the amplifier provided 13.5 dB power gain with 50% efficiency or better. It can also be used to drive a 200 MHz RFQ in the future. Power supplies, driver amplifier and coaxial circulators are being specified for the complete installation.« less

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

NASA Astrophysics Data System (ADS)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

Broadband laser amplifier based on gas-phase dimer molecules pumped by the Sun.

PubMed

Pe'er, I; Vishnevitsky, I; Naftali, N; Yogev, A

2001-09-01

We report the design and experimental realization of a solar-pumped dimer gas-laser amplifier. The amplifying medium is Te(2) gas, which is capable of amplifying laser signals over a broad spectral range. A gain of 42% was measured at a wavelength of 632.8 nm. We also present studies of the material characteristics and a brief review of the study of other candidate materials for solar pumping.

Peak-power limits on fiber amplifiers imposed by self-focusing

NASA Astrophysics Data System (ADS)

Farrow, Roger L.; Kliner, Dahv A. V.; Hadley, G. Ronald; Smith, Arlee V.

2006-12-01

We have numerically investigated the behavior of the fundamental mode of a step-index, multimode (MM) fiber as the optical power approaches the self-focusing limit (Pcrit). The analysis includes the effects of gain and bending (applicable to coiled fiber amplifiers). We find power-dependent, stationary solutions that propagate essentially without change at beam powers approaching Pcrit in straight and bent fibers. We show that in a MM fiber amplifier seeded with its fundamental eigenmode at powers ≪Pcrit, the transverse spatial profile adiabatically evolves through a continuum of stationary solutions as the beam is amplified toward Pcrit.

Compensated gain control circuit for buck regulator command charge circuit

DOEpatents

Barrett, D.M.

1996-11-05

A buck regulator command charge circuit includes a compensated-gain control signal for compensating for changes in the component values in order to achieve optimal voltage regulation. The compensated-gain control circuit includes an automatic-gain control circuit for generating a variable-gain control signal. The automatic-gain control circuit is formed of a precision rectifier circuit, a filter network, an error amplifier, and an integrator circuit. 5 figs.

Investigation of an X-band gigawatt long pulse multi-beam relativistic klystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhenbang; Huang, Hua; Lei, Lurong

2015-09-15

To achieve a gigawatt-level long pulse radiation power in X-band, a multi-beam relativistic klystron amplifier is proposed and studied experimentally. By introducing 18 electron drift tubes and extended interaction cavities, the power capacity of the device is increased. A radiation power of 1.23 GW with efficiency of 41% and amplifier gain of 46 dB is obtained in the particle-in-cell simulation. Under conditions of a 10 Hz repeat frequency and an input RF power of 30 kW, a radiation power of 0.9 GW, frequency of 9.405 GHz, pulse duration of 105 ns, and efficiency of 30% is generated in the experiment, and the amplifier gain is aboutmore » 45 dB. Both the simulation and the experiment prove that the multi-beam relativistic klystron amplifier can generate a long pulse GW-level radiation power in X-band.« less

A > 4 MGy radiation tolerant 8 THzOhm transimpedance amplifier with 50 dB dynamic range

NASA Astrophysics Data System (ADS)

Verbeeck, J.; Steyaert, M.; Leroux, P.

2013-02-01

A 130 nm Transimpedance Amplifier has been developed with a 255 MHz bandwidth, 90 dBΩ transimpedance gain and a dynamic input range of 1:325 or 50 dB for a photo-diode capacitance of 0.75 pF. The equivalent integrated input noise is 160 nA @ 25°C. The gain of the voltage amplifier, used in the transimpedance amplifier (TIA), degrades less than 3% over a temperature range from -40 °C up to 125 °C. The TIA and attenuator exhibit a radiation tolerance larger than 4 MGy, as evidenced by radiation assessment.

Implementation of a digital evaluation platform to analyze bifurcation based nonlinear amplifiers

NASA Astrophysics Data System (ADS)

Feldkord, Sven; Reit, Marco; Mathis, Wolfgang

2016-09-01

Recently, nonlinear amplifiers based on the supercritical Andronov-Hopf bifurcation have become a focus of attention, especially in the modeling of the mammalian hearing organ. In general, to gain deeper insights in the input-output behavior, the analysis of bifurcation based amplifiers requires a flexible framework to exchange equations and adjust certain parameters. A DSP implementation is presented which is capable to analyze various amplifier systems. Amplifiers based on the Andronov-Hopf and Neimark-Sacker bifurcations are implemented and compared exemplarily. It is shown that the Neimark-Sacker system remarkably outperforms the Andronov-Hopf amplifier regarding the CPU usage. Nevertheless, both show a similar input-output behavior over a wide parameter range. Combined with an USB-based control interface connected to a PC, the digital framework provides a powerful instrument to analyze bifurcation based amplifiers.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Fast terahertz imaging using a quantum cascade amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Yuan, E-mail: yr235@cam.ac.uk; Wallis, Robert; Jessop, David Stephen

2015-07-06

A terahertz (THz) imaging scheme based on the effect of self-mixing in a 2.9 THz quantum cascade (QC) amplifier has been demonstrated. By coupling an antireflective-coated silicon lens to the facet of a QC laser, with no external optical feedback, the laser mirror losses are enhanced to fully suppress lasing action, creating a THz QC amplifier. The addition of reflection from an external target to the amplifier creates enough optical feedback to initiate lasing action and the resulting emission enhances photon-assisted transport, which in turn reduces the voltage across the device. At the peak gain point, the maximum photon densitymore » coupled back leads to a prominent self-mixing effect in the QC amplifier, leading to a high sensitivity, with a signal to noise ratio up to 55 dB, along with a fast data acquisition speed of 20 000 points per second.« less

Multi-pass light amplifier

NASA Technical Reports Server (NTRS)

Plaessmann, Henry (Inventor); Grossman, William M. (Inventor)

1997-01-01

A multiple-pass laser amplifier that uses optical focusing between subsequent passes through a single gain medium so that a reproducibly stable beam size is achieved within the gain region. A confocal resonator or White Cell resonator is provided, including two or three curvilinearly shaped mirrors facing each other along a resonator axis and an optical gain medium positioned on the resonator axis between the mirrors (confocal resonator) or adjacent to one of the mirrors (White Cell). In a first embodiment, two mirrors, which may include adjacent lenses, are configured so that a light beam passing through the gain medium and incident on the first mirror is reflected by that mirror toward the second mirror in a direction approximately parallel to the resonator axis. A light beam translator, such as an optical flat of transparent material, is positioned to translate this light beam by a controllable amount toward or away from the resonator axis for each pass of the light beam through the translator. The optical gain medium may be solid-state, liquid or gaseous medium and may be pumped longitudinally or transversely. In a second embodiment, first and second mirrors face a third mirror in a White Cell configuration, and the optical gain medium is positioned at or adjacent to one of the mirrors. Defocusing means and optical gain medium cooling means are optionally provided with either embodiment, to controllably defocus the light beam, to cool the optical gain medium and to suppress thermal lensing in the gain medium.

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB acrossmore » a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit.« less

A CMOS-MEMS clamped–clamped beam displacement amplifier for resonant switch applications

NASA Astrophysics Data System (ADS)

Liu, Jia-Ren; Lu, Shih-Chuan; Tsai, Chun-Pu; Li, Wei-Chang

2018-06-01

This paper presents a micromechanical clamped–clamped beam (CC-beam) displacement amplifier based on a CMOS-MEMS fabrication process platform. In particular, a 2.0 MHz resonant displacement amplifier composed of two identical CC-beams coupled by a mechanical beam at locations where the two beams have mismatched velocities exhibits a larger displacement, up to 9.96×, on one beam than that of the other. The displacement amplification prevents unwanted input impacting—the structure switches only to the output but not the input—required by resonant switch-based mechanical circuits (Kim et al 2009 22nd IEEE Int. Conf. on Micro Electro Mechanical Systems; Lin et al 2009 15th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’09) Li et al 2013 17th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’13)). Compared to a single CC-beam displacement amplifier, theory predicts that the displacement amplifying CC-beam array yields a larger overall output displacement for displacement gain beyond 1.13 thanks to the preserved input driving force. A complete analytical model predicts the resultant stiffness and displacement gain of the coupled CC-beam displacement amplifier that match well with finite element analysis (FEA) prediction and measured results.

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

NASA Technical Reports Server (NTRS)

Pinsukanjana, Paul R.; Samoska, Lorene A.; Gaier, Todd C.; Smith, R. Peter; Ksendzov, Alexander; Fitzsimmons, Michael J.; Martin, Suzanne C.

1998-01-01

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this

Amplifying modeling for broad bandwidth pulse in Nd:glass based on hybrid-broaden mechanism

NASA Astrophysics Data System (ADS)

Su, J.; Liu, L.; Luo, B.; Wang, W.; Jing, F.; Wei, X.; Zhang, X.

2008-05-01

In this paper, the cross relaxation time is proposed to combine the homogeneous and inhomogeneous broaden mechanism for broad bandwidth pulse amplification model. The corresponding velocity equation, which can describe the response of inverse population on upper and low energy level of gain media to different frequency of pulse, is also put forward. The gain saturation and energy relaxation effect are also included in the velocity equation. Code named CPAP has been developed to simulate the amplifying process of broad bandwidth pulse in multi-pass laser system. The amplifying capability of multi-pass laser system is evaluated and gain narrowing and temporal shape distortion are also investigated when bandwidth of pulse and cross relaxation time of gain media are different. Results can benefit the design of high-energy PW laser system in LFRC, CAEP.

Development of cryogenic Yb:YAG ceramics amplifier for over 100 J DPSSL

NASA Astrophysics Data System (ADS)

Sekine, T.; Takeuchi, Y.; Kurita, T.; Hatano, Y.; Muramatsu, Y.; Mizuta, Y.; Kabeya, Y.; Tamaoki, Y.; Kato, Y.

2017-02-01

A high gain cryogenic Yb:YAG ceramics laser amplifier for a high energy laser amplification system has been developed. The laser system consists of a fiber oscillator and two stage LD pumped cryogenic Yb:YAG ceramic amplifiers. The preamplifier stage has a 5-pass laser amplifier head and the main amplifier stage has a 2-pass laser amplifier head, respectively. The preamplifier obtained an average stored energy density of 0.836 J/cc and small-signal gain (SSG) of 60 with 33 J of stored energy. Then about 1 μJ of input energy from the oscillator was amplified to 3.6 J. The main amplifier head had four pumping LD modules which irradiated the Yb:YAG ceramics directly. This original angular pumping scheme ideally increases irradiation intensity and homogenizes irradiation pattern on the Yb:YAG ceramics due to superposition effect of all of the LD modules. A maximum peak power of over 100 kW was generated by one LD module. When the output energy of the LD modules was 450 J, a 20 of SSG at single pass was obtained. Stored energy density was evaluated to 0.429 J/cc when 148 J energy was stored in 346 cc of Yb:YAG ceramics. As a result, a 55-J output energy with 10 ns pulse duration was demonstrated at a pumping energy of 450 J. The optical-tooptical conversion efficiency which includes transmissivity of the LD modules was 12 %. The extraction efficiency was estimated to 37%.

A microwave cryogenic low-noise amplifier based on sige heterostructures

NASA Astrophysics Data System (ADS)

Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

2016-04-01

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

Parametric Amplifier and Oscillator Based on Josephson Junction Circuitry

NASA Astrophysics Data System (ADS)

Yamamoto, T.; Koshino, K.; Nakamura, Y.

While the demand for low-noise amplification is ubiquitous, applications where the quantum-limited noise performance is indispensable are not very common. Microwave parametric amplifiers with near quantum-limited noise performance were first demonstrated more than 20 years ago. However, there had been little effort until recently to improve the performance or the ease of use of these amplifiers, partly because of a lack of any urgent motivation. The emergence of the field of quantum information processing in superconducting systems has changed this situation dramatically. The need to reliably read out the state of a given qubit using a very weak microwave probe within a very short time has led to renewed interest in these quantum-limited microwave amplifiers, which are already widely used as tools in this field. Here, we describe the quantum mechanical theory for one particular parametric amplifier design, called the flux-driven Josephson parametric amplifier, which we developed in 2008. The theory predicts the performance of this parametric amplifier, including its gain, bandwidth, and noise temperature. We also present the phase detection capability of this amplifier when it is operated with a pump power that is above the threshold, i.e., as a parametric phase-locked oscillator or parametron.

10 GHz dual loop opto-electronic oscillator without RF-amplifiers

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Okusaga, Olukayode; Nelson, Craig; Howe, David; Carter, Gary

2008-02-01

We report the first demonstration of a 10 GHz dual-fiber-loop Opto-Electronic Oscillator (OEO) without RF-amplifiers. Using a recently developed highly efficient RF-Photonic link with RF-to-RF gain facilitated by a high power laser, highly efficient optical modulator and high power phototectectors, we have built an amplifier-less OEO that eliminates the phase noise produced by the electronic amplifier. The dual-loop approach can provide additional gain and reduce unwanted multi-mode spurs. However, we have observed RF phase noise produced by the high power laser include relative intensity noise (RIN) and noise related to the laser's electronic control system. In addition, stimulated Brillouin scattering limits the fiber loop's length to ~2km at the 40mW laser power needed to provide the RF gain which limits the system's quality factor, Q. We have investigated several different methods for solving these problems. One promising technique is the use of a multi-longitudinal-mode laser to carry the RF signal, maintaining the total optical power but reducing the optical power of each mode to eliminate the Brillouin scattering in a longer fiber thereby reducing the phase noise of the RF signal produced by the OEO. This work shows that improvement in photonic components increases the potential for more RF system applications such as an OEO's with higher performance and new capabilities.

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Apparatus and methods for a human de-amplifier system

DOEpatents

Kress, Reid L.; Jansen, John F.

2000-01-01

A human de-amplifier system for interfacing a human operator and a physical object through a physical plant, wherein the physical object has dimensions in the range of 1 micrometer to 1 mm. The human de-amplifier system uses an inner-feedback loop to increases the equivalent damping of the operating system to stabilize the system when it contacts with the environment and reduces the impact of the environment variation by utilizing a high feedback gain, determined by a root locus sketch. Because the stability of the human de-amplifier system of the present invention is greatly enhanced over that of the prior art, the de-amplifier system is able to manipulate the physical object has dimensions in the range of 1 micrometer to 1 mm with high stability and accuracy. The system also has a monitoring device to monitor the motion of the physical object under manipulation.

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

PubMed

Puttisong, Yuttapoom; Buyanova, Irina A; Ptak, Aaron J; Tu, Charles W; Geelhaar, Lutz; Riechert, Henning; Chen, Weimin M

2013-02-06

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

NASA Astrophysics Data System (ADS)

Wen, Pengyue; Sanchez, Michael; Gross, Matthias; Esener, Sadik C.

2003-05-01

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.

The interhalogens IF and ICI as visible oscillators or amplifiers

NASA Technical Reports Server (NTRS)

Eden, J. G.; Dlabal, M. L.; Hutchison, S. B.

1981-01-01

The kinetic and spectroscopic properties of the interhalogens are reviewed, with emphasis on the iodine-monochloride (ICl) and iodine-monofluoride (IF) systems; the latter having produced 140 kW, 30 nsec FWHM pulses at 491 and 485 nm and may be scaled to the tens of millijoules per pulse level. Gain in excess of 1.0%/cm was observed across the entire IF blue-green band, demonstrating potentially wide tunability. Although ICl has not yet lased, its peak small-signal gain of 1.3%/cm and negligible background absorption in discharge plasmas make it an attractive candidate for a violet amplifier. The formation kinetics of IF- and ICl-excimer lasers in electron beam or discharge-produced plasmas, and the potential and limitations of these molecules as visible lasers or amplifiers are also discussed.

Phase noise in RF and microwave amplifiers.

PubMed

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Study of IEMP Effects on IC Operational Amplifier Circuits

DTIC Science & Technology

1975-12-10

plasma focus to study their IEMP responses with and without superposition of TREE responses. The 30-kJ plasma focus device produced photons primarily in the 8- to 100-keV range with pulse widths typically in the range of 10 to 15 nsec. Pulses of electrons were also deposited on the external leads of the operational amplifiers to determine the characteristic responses. These units were operated in circuits with closed-loop gains ranging from 5 to 100. During direct irradiation of the operational amplifiers, it was found that the IEMP responses (caused

Optimized radiation-hardened erbium doped fiber amplifiers for long space missions

NASA Astrophysics Data System (ADS)

Ladaci, A.; Girard, S.; Mescia, L.; Robin, T.; Laurent, A.; Cadier, B.; Boutillier, M.; Ouerdane, Y.; Boukenter, A.

2017-04-01

In this work, we developed and exploited simulation tools to optimize the performances of rare earth doped fiber amplifiers (REDFAs) for space missions. To describe these systems, a state-of-the-art model based on the rate equations and the particle swarm optimization technique is developed in which we also consider the main radiation effect on REDFA: the radiation induced attenuation (RIA). After the validation of this tool set by confrontation between theoretical and experimental results, we investigate how the deleterious radiation effects on the amplifier performance can be mitigated following adequate strategies to conceive the REDFA architecture. The tool set was validated by comparing the calculated Erbium-doped fiber amplifier (EDFA) gain degradation under X-rays at ˜300 krad(SiO2) with the corresponding experimental results. Two versions of the same fibers were used in this work, a standard optical fiber and a radiation hardened fiber, obtained by loading the previous fiber with hydrogen gas. Based on these fibers, standard and radiation hardened EDFAs were manufactured and tested in different operating configurations, and the obtained data were compared with simulation data done considering the same EDFA structure and fiber properties. This comparison reveals a good agreement between simulated gain and experimental data (<10% as the maximum error for the highest doses). Compared to our previous results obtained on Er/Yb-amplifiers, these results reveal the importance of the photo-bleaching mechanism competing with the RIA that cannot be neglected for the modeling of the radiation-induced gain degradation of EDFAs. This implies to measure in representative conditions the RIA at the pump and signal wavelengths that are used as input parameters for the simulation. The validated numerical codes have then been used to evaluate the potential of some EDFA architecture evolutions in the amplifier performance during the space mission. Optimization of both the

Investigations of gain redshift in high peak power Ti:sapphire laser systems

NASA Astrophysics Data System (ADS)

Wu, Fenxiang; Yu, Linpeng; Zhang, Zongxin; Li, Wenkai; Yang, Xiaojun; Wu, Yuanfeng; Li, Shuai; Wang, Cheng; Liu, Yanqi; Lu, Xiaoming; Xu, Yi; Leng, Yuxin

2018-07-01

Gain redshift in high peak power Ti:sapphire laser systems can result in narrowband spectral output and hence lengthen the compressed pulse duration. In order to realize broadband spectral output in 10 PW-class Ti:sapphire lasers, the influence on gain redshift induced by spectral pre-shaping, gain distribution of cascaded amplifiers and Extraction During Pumping (EDP) technique have been investigated. The theoretical and experimental results show that the redshift of output spectrum is sensitive to the spectral pre-shaping and the gain distribution of cascaded amplifiers, while insensitive to the pumping scheme with or without EDP. Moreover, the output spectrum from our future 10 PW Ti:sapphire laser is theoretically analyzed based on the investigations above, which indicates that a Fourier-transform limited (FTL) pulse duration of 21 fs can be achieved just by optimizing the spectral pre-shaping and gain distribution in 10 PW-class Ti:sapphire lasers.

Method and system for compact, multi-pass pulsed laser amplifier

DOEpatents

Erlandson, Alvin Charles

2014-11-25

A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

Common source cascode amplifiers for integrating IR-FPA applications

NASA Technical Reports Server (NTRS)

Woolaway, James T.; Young, Erick T.

1989-01-01

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Special Component Designs for Differential-Amplifier MMICs

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka

2010-01-01

therefore there is no need for a low-resistance contact between the source and the radio-frequency circuitry. The source contact is needed only for DC biasing. These designs were implemented in a single-stage-amplifier MMIC. In a test at a frequency of 305 GHz, the amplifier embedded in a waveguide exhibited a gain of 0 dB; after correcting for the loss in the waveguide, the amplifier was found to afford a gain of 0.9 dB. In a test at 220 GHz, the overall gain of the amplifier- and-waveguide assembly was found to be 3.5 dB.

100J-level nanosecond pulsed Yb:YAG cryo-cooled DPSSL amplifier

NASA Astrophysics Data System (ADS)

Smith, J. M.; Butcher, T. J.; Mason, P. D.; Ertel, K.; Phillips, P. J.; Banerjee, S.; De Vido, M.; Chekhlov, O.; Divoky, M.; Pilar, J.; Shaikh, W.; Hooker, C.; Lucianetti, A.; Hernandez Gomez, C.; Mocek, T.; Edwards, C.; Collier, J. L.

2018-02-01

We report on the successful demonstration of the world's first kW average power, 100 Joule-class, high-energy, nanosecond pulsed diode-pumped solid-state laser (DPSSL), DiPOLE100. Results from the first long-term test for amplification will be presented; the system was operated for 1 hour with 10 ns duration pulses at 10 Hz pulse repetition rate and an average output energy of 105 J and RMS energy stability of approximately 1%. The laser system is based on scalable cryogenic gas-cooled multi-slab ceramic Yb:YAG amplifier technology. The DiPOLE100 system comprises three major sub-systems, a spatially and temporally shaped front end, a 10 J cryo-amplifier and a 100 J cryo-amplifier. The 10 J cryo-amplifier contain four Yb:YAG ceramic gain media slabs, which are diode pumped from both sides, while a multi-pass architecture configured for seven passes enables 10 J of energy to be extracted at 10 Hz. This seeds the 100 J cryo-amplifier, which contains six Yb:YAG ceramic gain media slabs with the multi-pass configured for four passes. Our future development plans for this architecture will be introduced including closed-loop pulse shaping, increased energy, higher repetition rates and picosecond operation. This laser architecture unlocks the potential for practical applications including new sources for industrial materials processing and high intensity laser matter studies as envisioned for ELI [1], HiLASE [2], and the European XFEL [3]. Alternatively, it can be used as a pump source for higher repetition rate PW-class amplifiers, which can themselves generate high-brightness secondary radiation and ion sources leading to new remote imaging and medical applications.

Simulation of energy buildups in solid-state regenerative amplifiers for 2-μm emitting lasers

NASA Astrophysics Data System (ADS)

Springer, Ramon; Alexeev, Ilya; Heberle, Johannes; Pflaum, Christoph

2018-02-01

A numerical model for solid-state regenerative amplifiers is presented, which is able to precisely simulate the quantitative energy buildup of stretched femtosecond pulses over passed roundtrips in the cavity. In detail, this model is experimentally validated with a Ti:Sapphire regenerative amplifier. Additionally, the simulation of a Ho:YAG based regenerative amplifier is conducted and compared to experimental data from literature. Furthermore, a bifurcation study of the investigated Ho:YAG system is performed, which leads to the identification of stable and instable operation regimes. The presented numerical model exhibits a well agreement to the experimental results from the Ti:Sapphire regenerative amplifier. Also, the gained pulse energy from the Ho:YAG system could be approximated closely, while the mismatch is explained with the monochromatic calculation of pulse amplification. Since the model is applicable to other solid-state gain media, it allows for the efficient design of future amplification systems based on regenerative amplification.

Method and system for edge cladding of laser gain media

DOEpatents

Bayramian, Andrew James; Caird, John Allyn; Schaffers, Kathleen Irene

2014-03-25

A gain medium operable to amplify light at a gain wavelength and having reduced transverse ASE includes an input surface and an output surface opposing the input surface. The gain medium also includes a central region including gain material and extending between the input surface and the output surface along a longitudinal optical axis of the gain medium. The gain medium further includes an edge cladding region surrounding the central region and extending between the input surface and the output surface along the longitudinal optical axis of the gain medium. The edge cladding region includes the gain material and a dopant operable to absorb light at the gain wavelength.

Active spectral shaping with polarization-encoded Ti:sapphire amplifiers for sub-20 fs multi-terawatt systems

NASA Astrophysics Data System (ADS)

Cao, H.; Kalashnikov, M.; Osvay, K.; Khodakovskiy, N.; Nagymihaly, R. S.; Chvykov, V.

2018-04-01

A combination of a polarization-encoded (PE) and a conventional multi-pass amplifier was studied to overcome gain narrowing in the Ti:sapphire active medium. The seed spectrum was pre-shaped and blue-shifted during PE amplification and was then further broadened in a conventional, saturated multi-pass amplifier, resulting in an overall increase of the amplified bandwidth. Using this technique, seed pulses of 44 nm were amplified and simultaneously spectrally broadened to 57 nm without the use of passive spectral corrections. The amplified pulse after the PE amplifier was recompressed to 19 fs. The supported simulations confirm all aspects of experimental operation.

Gain-switched laser diode seeded Yb-doped fiber amplifier delivering 11-ps pulses at repetition rates up to 40-MHz

NASA Astrophysics Data System (ADS)

Ryser, Manuel; Neff, Martin; Pilz, Soenke; Burn, Andreas; Romano, Valerio

2012-02-01

Here, we demonstrate all-fiber direct amplification of 11 picosecond pulses from a gain-switched laser diode at 1063 nm. The diode was driven at a repetition rate of 40 MHz and delivered 13 μW of fiber-coupled average output power. For the low output pulse energy of 0.33 pJ we have designed a multi-stage core pumped preamplifier based on single clad Yb-doped fibers in order to keep the contribution of undesired amplified spontaneous emission as low as possible and to minimize temporal and spectral broadening. After the preamplifier we reduced the 40 MHz repetition rate to 1 MHz using a fiber coupled pulse-picker. The final amplification was done with a cladding pumped Yb-doped large mode area fiber and a subsequent Yb-doped rod-type fiber. With our setup we achieved amplification of 72 dBs to an output pulse energy of 5.7 μJ, pulse duration of 11 ps and peak power of >0.6 MW.

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

NASA Technical Reports Server (NTRS)

Tserng, Hua-Quen; Ketterson, Andrew; Saunier, Paul; McCarty, Larry; Davis, Steve

1998-01-01

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

An 11 μ w, two-electrode transimpedance biosignal amplifier with active current feedback stabilization.

PubMed

Inan, O T; Kovacs, G T A

2010-04-01

A novel two-electrode biosignal amplifier circuit is demonstrated by using a composite transimpedance amplifier input stage with active current feedback. Micropower, low gain-bandwidth product operational amplifiers can be used, leading to the lowest reported overall power consumption in the literature for a design implemented with off-the-shelf commercial integrated circuits (11 μW). Active current feedback forces the common-mode input voltage to stay within the supply rails, reducing baseline drift and amplifier saturation problems that can be present in two-electrode systems. The bandwidth of the amplifier extends from 0.05-200 Hz and the midband voltage gain (assuming an electrode-to-skin resistance of 100 kΩ) is 48 dB. The measured output noise level is 1.2 mV pp, corresponding to a voltage signal-to-noise ratio approaching 50 dB for a typical electrocardiogram (ECG) level input of 1 mVpp. Recordings were taken from a subject by using the proposed two-electrode circuit and, simultaneously, a three-electrode standard ECG circuit. The residual of the normalized ensemble averages for both measurements was computed, and the power of this residual was 0.54% of the power of the standard ECG measurement output. While this paper primarily focuses on ECG applications, the circuit can also be used for amplifying other biosignals, such as the electroencephalogram.

Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

DOEpatents

McQuaid, James H.; Lavietes, Anthony D.

1998-05-29

A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radio nuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components.

Ambient temperature cadmium zinc telluride radiation detector and amplifier circuit

DOEpatents

McQuaid, J.H.; Lavietes, A.D.

1998-05-26

A low noise, low power consumption, compact, ambient temperature signal amplifier for a Cadmium Zinc Telluride (CZT) radiation detector is disclosed. The amplifier can be used within a larger system (e.g., including a multi-channel analyzer) to allow isotopic analysis of radionuclides in the field. In one embodiment, the circuit stages of the low power, low noise amplifier are constructed using integrated circuit (IC) amplifiers , rather than discrete components, and include a very low noise, high gain, high bandwidth dual part preamplification stage, an amplification stage, and an filter stage. The low noise, low power consumption, compact, ambient temperature amplifier enables the CZT detector to achieve both the efficiency required to determine the presence of radionuclides and the resolution necessary to perform isotopic analysis to perform nuclear material identification. The present low noise, low power, compact, ambient temperature amplifier enables a CZT detector to achieve resolution of less than 3% full width at half maximum at 122 keV for a Cobalt-57 isotope source. By using IC circuits and using only a single 12 volt supply and ground, the novel amplifier provides significant power savings and is well suited for prolonged portable in-field use and does not require heavy, bulky power supply components. 9 figs.

Two-electrode low supply voltage electrocardiogram signal amplifier.

PubMed

Dobrev, D

2004-03-01

Portable biomedical instrumentation has become an important part of diagnostic and treatment instrumentation, including telemedicine applications. Low-voltage and low-power design tendencies prevail. Modern battery cell voltages in the range of 3-3.6 V require appropriate circuit solutions. A two-electrode biopotential amplifier design is presented, with a high common-mode rejection ratio (CMRR), high input voltage tolerance and standard first-order high-pass characteristic. Most of these features are due to a high-gain first stage design. The circuit makes use of passive components of popular values and tolerances. Powered by a single 3 V source, the amplifier tolerates +/- 1 V common mode voltage, +/- 50 microA common mode current and 2 V input DC voltage, and its worst-case CMRR is 60 dB. The amplifier is intended for use in various applications, such as Holter-type monitors, defibrillators, ECG monitors, biotelemetry devices etc.

Fast optimization of multipump Raman amplifiers based on a simplified wavelength and power budget heuristic

NASA Astrophysics Data System (ADS)

de O. Rocha, Helder R.; Castellani, Carlos E. S.; Silva, Jair A. L.; Pontes, Maria J.; Segatto, Marcelo E. V.

2015-01-01

We report a simple budget heuristic for a fast optimization of multipump Raman amplifiers based on the reallocation of the pump wavelengths and the optical powers. A set of different optical fibers are analyzed as the Raman gain medium, and a four-pump amplifier setup is optimized for each of them in order to achieve ripples close to 1 dB and gains up to 20 dB in the C band. Later, a comparison between our proposed heuristic and a multiobjective optimization based on a nondominated sorting genetic algorithm is made, highlighting the fact that our new approach can give similar solutions after at least an order of magnitude fewer iterations. The results shown in this paper can potentially pave the way for real-time optimization of multipump Raman amplifier systems.

Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs

NASA Astrophysics Data System (ADS)

Hibi, Yasunori; Matsuo, Hiroshi; Ikeda, Hirokazu; Fujiwara, Mikio; Kang, Lin; Chen, Jian; Wu, Peiheng

2016-01-01

To realize a multipixel camera for astronomical observation, we developed cryogenic multi-channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET) integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed, manufactured, and demonstrated operational amplifiers requiring four power supplies and two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The gain-bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance evaluations, the input-referred voltage noise was 4 μVrms/Hz0.5 at 1 Hz and 30 nVrms/Hz0.5 at 10 kHz, respectively. The noise power spectrum density was of type 1/f and extended to 10 kHz.

Thermal and dynamic range characterization of a photonics-based RF amplifier

NASA Astrophysics Data System (ADS)

Noque, D. F.; Borges, R. M.; Muniz, A. L. M.; Bogoni, A.; Cerqueira S., Arismar, Jr.

2018-05-01

This work reports a thermal and dynamic range characterization of an ultra-wideband photonics-based RF amplifier for microwave and mm-waves future 5G optical-wireless networks. The proposed technology applies the four-wave mixing nonlinear effect to provide RF amplification in analog and digital radio-over-fiber systems. The experimental analysis from 300 kHz to 50 GHz takes into account different figures of merit, such as RF gain, spurious-free dynamic range and RF output power stability as a function of temperature. The thermal characterization from -10 to +70 °C demonstrates a 27 dB flat photonics-assisted RF gain over the entire frequency range under real operational conditions of a base station for illustrating the feasibility of the photonics-assisted RF amplifier for 5G networks.

Radiofrequency amplifier based on a dc superconducting quantum interference device

DOEpatents

Hilbert, Claude; Martinis, John M.; Clarke, John

1986-01-01

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

Approximate reversibility in the context of entropy gain, information gain, and complete positivity

NASA Astrophysics Data System (ADS)

Buscemi, Francesco; Das, Siddhartha; Wilde, Mark M.

2016-06-01

There are several inequalities in physics which limit how well we can process physical systems to achieve some intended goal, including the second law of thermodynamics, entropy bounds in quantum information theory, and the uncertainty principle of quantum mechanics. Recent results provide physically meaningful enhancements of these limiting statements, determining how well one can attempt to reverse an irreversible process. In this paper, we apply and extend these results to give strong enhancements to several entropy inequalities, having to do with entropy gain, information gain, entropic disturbance, and complete positivity of open quantum systems dynamics. Our first result is a remainder term for the entropy gain of a quantum channel. This result implies that a small increase in entropy under the action of a subunital channel is a witness to the fact that the channel's adjoint can be used as a recovery map to undo the action of the original channel. We apply this result to pure-loss, quantum-limited amplifier, and phase-insensitive quantum Gaussian channels, showing how a quantum-limited amplifier can serve as a recovery from a pure-loss channel and vice versa. Our second result regards the information gain of a quantum measurement, both without and with quantum side information. We find here that a small information gain implies that it is possible to undo the action of the original measurement if it is efficient. The result also has operational ramifications for the information-theoretic tasks known as measurement compression without and with quantum side information. Our third result shows that the loss of Holevo information caused by the action of a noisy channel on an input ensemble of quantum states is small if and only if the noise can be approximately corrected on average. We finally establish that the reduced dynamics of a system-environment interaction are approximately completely positive and trace preserving if and only if the data processing

A high speed and high gain CMOS receiver chip for a pulsed time-of-flight laser rangefinder

NASA Astrophysics Data System (ADS)

Yu, Jin-jin; Deng, Ruo-han; Yuan, Hong-hui; Chen, Yong-ping

2011-06-01

An integrated receiver channel for a pulsed time-of-flight (TOF) laser rangefinder has been designed. Pulsed TOF laser range finding devices using a laser diode transmitter can achieve millimeter-level distance measurement accuracy in a measurement range of several tens of meters to non-cooperative targets. The amplifier exploits the regulated cascade (RGC) configuration as the input-stage, thus achieving as large effective input trans-conductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. To enlarge the bandwidth, inductive peaking technology has been adopted. An active inductor (MOS-L) is used instead of spiral inductor in CMOS process. An R-2R resistor ladder is inserting between per-amplifier and post-amplifier as the variable attenuator for digital gain control purpose. The gain-bandwidth of a basic differential pair with resistive load is not large enough for broad band operation. A circuit solution to improve both gain and bandwidth of an amplifying stage is proposed. Traditional and modified Cherry-Hooper amplifiers are discussed and the cascading of several stages to constitute the post-amplifier is designed. The fully integrated one-chip solution is designed with Cadence IC design platform. The simulation result shows the bandwidth of the trans-impedance amplifier is 215MHz with the presence of a 2pF input capacitor and 5pF load capacitor. And the maximum trans-impedance gain is 136dB. The walk error is less than 1ns in 1:1000 dynamic range. The responsive time is less than 2.2ns.

Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andorf, Matthew; Lebedev, Valeri; Piot, Philippe

2016-06-01

Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility ofmore » nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.« less

An integrated CMOS bio-potential amplifier with a feed-forward DC cancellation topology.

PubMed

Parthasarathy, Jayant; Erdman, Arthur G; Redish, Aaron D; Ziaie, Babak

2006-01-01

This paper describes a novel technique to realize an integrated CMOS bio-potential amplifier with a feedforward DC cancellation topology. The amplifier is designed to provide substantial DC cancellation even while amplifying very low frequency signals. More than 80 dB offset rejection ratio is achieved without any external capacitors. The cancellation scheme is robust against process and temperature variations. The amplifier is fabricated through MOSIS AMI 1.5 microm technology (0.05 mm2 area). Measurement results show a gain of 43.5 dB in the pass band (<1 mHz-5 KHz), an input referred noise of 3.66 microVrms, and a current consumption of 22 microA.

Field Effect Transistor /FET/ circuit for variable gin amplifiers

NASA Technical Reports Server (NTRS)

Spaid, G. H.

1969-01-01

Amplifier circuit using two FETs combines improved input and output impedances with relatively large signal handling capability and an immunity from adverse effects of automatic gain control. Circuit has sources and drains in parallel plus a resistive divider for signal and bias to either of the gate terminals.

Theory of multiwave mixing within the superconducting kinetic-inductance traveling-wave amplifier

NASA Astrophysics Data System (ADS)

Erickson, R. P.; Pappas, D. P.

2017-03-01

We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first developing a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear RF traveling waves. Our theory allows us to calculate signal gain versus signal frequency in the presence of a frequency stop gap, based solely on loading design. We present results for both three-wave mixing (3WM), with applied dc bias, and four-wave mixing (4WM), without dc. Our theory predicts an intrinsic and deterministic origin to undulations of 4WM signal gain with signal frequency, apart from extrinsic sources, such as impedance mismatch, and shows that such undulations are absent from 3WM signal gain achievable with dc. Our theory is extensible to amplifiers based on Josephson junctions in a lumped LC-ladder transmission line (TWPA).

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Kim, K. H.; Stock, L. V.

1986-01-01

In order to evaluate the feasibility of the solar pumped dye laser, the parametric study of a dye laser amplifier pumped by a solar simulator and flashlamp was carried out, and the amplifier gains were measured at various pump beam irradiances on the dye cell. Rhodamine 6G was considered as a candidate for the solar pumped laser because of its good utilization of the solar spectrum and high quantum efficiency. The measurement shows that a solar concentration of 20,000 is required to reach the threshold of the dye. The work to construct a kinetic model algorithm which predicts the output parameter of laser was progressed. The kinetic model was improved such that there is good agreement between the theoretical model and experimental data for the systems defined previously as flashlamp pumped laser oscillator, and the long path length solar pumped laser.

Integrated injection seeded terahertz source and amplifier for time-domain spectroscopy.

PubMed

Maysonnave, J; Jukam, N; Ibrahim, M S M; Maussang, K; Madéo, J; Cavalié, P; Dean, P; Khanna, S P; Steenson, D P; Linfield, E H; Davies, A G; Tignon, J; Dhillon, S S

2012-02-15

We used a terahertz (THz) quantum cascade laser (QCL) as an integrated injection seeded source and amplifier for THz time-domain spectroscopy. A THz input pulse is generated inside a QCL by illuminating the laser facet with a near-IR pulse from a femtosecond laser and amplified using gain switching. The THz output from the QCL is found to saturate upon increasing the amplitude of the THz input power, which indicates that the QCL is operating in an injection seeded regime.

100 mm diameter rod laser amplifiers made of different Nd:glasses

NASA Astrophysics Data System (ADS)

Shaykin, A. A.; Kuzmin, A. A.; Shaikin, I. A.; Potemkin, A. K.; Arbuzov, V. I.; Hu, Lili; Wen, Lei; Khazanov, Е A.

2018-03-01

We measured the dependence of the weak signal gain of 100 mm diameter rod amplifiers on pump energy and transverse coordinates for four neodymium glass grades. The highest gain was obtained in N31-05 (China), and the highest radial gain uniformity in KGSS-0180 glass (Russia). The data obtained enable the optimal glass grade to be chosen for each specific problem by finding a compromise between maximum output energy and minimum distortion of beam profile.

Multi-path interferometric Josephson directional amplifier for qubit readout

NASA Astrophysics Data System (ADS)

Abdo, Baleegh; Bronn, Nicholas T.; Jinka, Oblesh; Olivadese, Salvatore; Brink, Markus; Chow, Jerry M.

2018-04-01

We realize and characterize a quantum-limited, directional Josephson amplifier suitable for qubit readout. The device consists of two nondegenerate, three-wave-mixing amplifiers that are coupled together in an interferometric scheme, embedded in a printed circuit board. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the device, which plays the role of the magnetic field in a Faraday medium. Directional amplification and reflection-gain elimination are induced via wave interference between multiple paths in the system. We measure and discuss the main figures of merit of the device and show that the experimental results are in good agreement with theory. An improved version of this directional amplifier is expected to eliminate the need for bulky, off-chip isolation stages that generally separate quantum systems and preamplifiers in high-fidelity, quantum-nondemolition measurement setups.

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Investigation of the photon statistics of parametric fluorescence in a traveling-wave parametric amplifier by means of self-homodyne tomography.

PubMed

Vasilyev, M; Choi, S K; Kumar, P; D'Ariano, G M

1998-09-01

Photon-number distributions for parametric fluorescence from a nondegenerate optical parametric amplifier are measured with a novel self-homodyne technique. These distributions exhibit the thermal-state character predicted by theory. However, a difference between the fluorescence gain and the signal gain of the parametric amplifier is observed. We attribute this difference to a change in the signal-beam profile during the traveling-wave pulsed amplification process.

Frequency-Offset Cartesian Feedback Based on Polyphase Difference Amplifiers

PubMed Central

Zanchi, Marta G.; Pauly, John M.; Scott, Greig C.

2010-01-01

A modified Cartesian feedback method called “frequency-offset Cartesian feedback” and based on polyphase difference amplifiers is described that significantly reduces the problems associated with quadrature errors and DC-offsets in classic Cartesian feedback power amplifier control systems. In this method, the reference input and feedback signals are down-converted and compared at a low intermediate frequency (IF) instead of at DC. The polyphase difference amplifiers create a complex control bandwidth centered at this low IF, which is typically offset from DC by 200–1500 kHz. Consequently, the loop gain peak does not overlap DC where voltage offsets, drift, and local oscillator leakage create errors. Moreover, quadrature mismatch errors are significantly attenuated in the control bandwidth. Since the polyphase amplifiers selectively amplify the complex signals characterized by a +90° phase relationship representing positive frequency signals, the control system operates somewhat like single sideband (SSB) modulation. However, the approach still allows the same modulation bandwidth control as classic Cartesian feedback. In this paper, the behavior of the polyphase difference amplifier is described through both the results of simulations, based on a theoretical analysis of their architecture, and experiments. We then describe our first printed circuit board prototype of a frequency-offset Cartesian feedback transmitter and its performance in open and closed loop configuration. This approach should be especially useful in magnetic resonance imaging transmit array systems. PMID:20814450

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement.

PubMed

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 10 11 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

NASA Astrophysics Data System (ADS)

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Optical rogue-wave-like extreme value fluctuations in fiber Raman amplifiers.

PubMed

Hammani, Kamal; Finot, Christophe; Dudley, John M; Millot, Guy

2008-10-13

We report experimental observation and characterization of rogue wave-like extreme value statistics arising from pump-signal noise transfer in a fiber Raman amplifier. Specifically, by exploiting Raman amplification with an incoherent pump, the amplified signal is shown to develop a series of temporal intensity spikes whose peak power follows a power-law probability distribution. The results are interpreted using a numerical model of the Raman gain process using coupled nonlinear Schrödinger equations, and the numerical model predicts results in good agreement with experiment.

Cryogenic cooling for high power laser amplifiers

NASA Astrophysics Data System (ADS)

Perin, J. P.; Millet, F.; Divoky, M.; Rus, B.

2013-11-01

Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

Stokes injected Raman capillary waveguide amplifier

DOEpatents

Kurnit, Norman A.

1980-01-01

A device for producing stimulated Raman scattering of CO.sub.2 laser radiation by rotational states in a diatomic molecular gas utilizing a Stokes injection signal. The system utilizes a cryogenically cooled waveguide for extending focal interaction length. The waveguide, in conjunction with the Stokes injection signal, reduces required power density of the CO.sub.2 radiation below the breakdown threshold for the diatomic molecular gas. A Fresnel rhomb is employed to circularly polarize the Stokes injection signal and CO.sub.2 laser radiation in opposite circular directions. The device can be employed either as a regenerative oscillator utilizing optical cavity mirrors or as a single pass amplifier. Additionally, a plurality of Raman gain cells can be staged to increase output power magnitude. Also, in the regenerative oscillator embodiment, the Raman gain cell cavity length and CO.sub.2 cavity length can be matched to provide synchronism between mode locked CO.sub.2 pulses and pulses produced within the Raman gain cell.

First demonstration of high-order QAM signal amplification in PPLN-based phase sensitive amplifier.

PubMed

Umeki, T; Tadanaga, O; Asobe, M; Miyamoto, Y; Takenouchi, H

2014-02-10

We demonstrate the phase sensitive amplification of a high-order quadrature amplitude modulation (QAM) signal using non-degenerate parametric amplification in a periodically poled lithium niobate (PPLN) waveguide. The interaction between the pump, signal, and phase-conjugated idler enables us to amplify arbitrary phase components of the signal. The 16QAM signals are amplified without distortion because of the high gain linearity of the PPLN-based phase sensitive amplifier (PSA). Both the phase and amplitude noise reduction capabilities of the PSA are ensured. Phase noise cancellation is achieved by using the interaction with the phase-conjugated idler. A degraded signal-to-noise ratio (SNR) is restored by using the gain difference between a phase-correlated signal-idler pair and uncorrelated excess noise. The applicability of the simultaneous amplification of multi-carrier signals and the amplification of two independent polarization signals are also confirmed with a view to realizing ultra-high spectrally efficient signal amplification.

Quantum spatial propagation of squeezed light in a degenerate parametric amplifier

NASA Technical Reports Server (NTRS)

Deutsch, Ivan H.; Garrison, John C.

1992-01-01

Differential equations which describe the steady state spatial evolution of nonclassical light are established using standard quantum field theoretic techniques. A Schroedinger equation for the state vector of the optical field is derived using the quantum analog of the slowly varying envelope approximation (SVEA). The steady state solutions are those that satisfy the time independent Schroedinger equation. The resulting eigenvalue problem then leads to the spatial propagation equations. For the degenerate parametric amplifier this method shows that the squeezing parameter obey nonlinear differential equations coupled by the amplifier gain and phase mismatch. The solution to these differential equations is equivalent to one obtained from the classical three wave mixing steady state solution to the parametric amplifier with a nondepleted pump.

High-gain 1.3  μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10  Gb/s.

PubMed

Fitsios, D; Giannoulis, G; Korpijärvi, V-M; Viheriälä, J; Laakso, A; Iliadis, N; Dris, S; Spyropoulou, M; Avramopoulos, H; Kanellos, G T; Pleros, N; Guina, M

2015-01-01

We report on the complete experimental evaluation of a GaInNAs/GaAs (dilute nitride) semiconductor optical amplifier that operates at 1.3 μm and exhibits 28 dB gain and a gain recovery time of 100 ps. Successful wavelength conversion operation is demonstrated using pseudorandom bit sequence 2⁷-1 non-return-to-zero bit streams at 5 and 10  Gb/s, yielding error-free performance and showing feasibility for implementation in various signal processing functionalities. The operational credentials of the device are analyzed in various operational regimes, while its nonlinear performance is examined in terms of four-wave mixing. Moreover, characterization results reveal enhanced temperature stability with almost no gain variation around the 1320 nm region for a temperature range from 20°C to 50°C. The operational characteristics of the device, along with the cost and energy benefits of dilute nitride technology, make it very attractive for application in optical access networks and dense photonic integrated circuits.

Design, construction and test of RF solid state power amplifier for IRANCYC-10

NASA Astrophysics Data System (ADS)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

SQUARE WAVE AMPLIFIER

DOEpatents

Leavitt, M.A.; Lutz, I.C.

1958-08-01

An amplifier circuit is described for amplifying sigmals having an alternating current component superimposed upon a direct current component, without loss of any segnnent of the alternating current component. The general circuit arrangement includes a vibrator, two square wave amplifiers, and recombination means. The amplifier input is connected to the vibrating element of the vibrator and is thereby alternately applied to the input of each square wave amplifier. The detailed circuitry of the recombination means constitutes the novelty of the annplifier and consists of a separate, dual triode amplifier coupled to the output of each square wave amplifier with a recombination connection from the plate of one amplifier section to a grid of one section of the other amplifier. The recombination circuit has provisions for correcting distortion caused by overlapping of the two square wave voltages from the square wave amplifiers.

Design and assessment of a robust voltage amplifier with 2.5 GHz GBW and >100 kGy total dose tolerance

NASA Astrophysics Data System (ADS)

Verbeeck, J.; Leroux, P.; Steyaert, M.

2011-01-01

A differential voltage amplifier with a gain-bandwidth product of 2.5Ghz and using adaptive biasing has been designed in a standard CMOS technology and assessed under radiation and temperature variations. The principle used in this ASIC will be employed in the design of a Gbps TIA with improved tolerance for γ-irradiation and temperature for an optical instrumentation (LIDAR) receiver aiming at operation in harsh environments. The voltage amplifier was tested under gamma radiation and features a gain degradation of merely 4.5% up to a total dose of 100kGy. In order to verify the radiation effects on the IC, the threshold voltage shift of the separate transistors has been investigated. Temperature characterization has shown that the amplifier features a reduction of the voltage gain by only 5.6% for a temperature range of -40 till 130 °C.

Note: Characterization and test of a high input impedance RF amplifier for series nanowire detector

NASA Astrophysics Data System (ADS)

Wan, Chao; Pei, Yufeng; Jiang, Zhou; Kang, Lin; Wu, Peiheng

2016-09-01

We designed a high input impedance RF amplifier based on Tower Jazz's 0.18 μm SiGe BiCMOS process for series nanowire detector. The characterization of its gain and input impedance with a vector network analyzer is described in detail for its specificity. The actual 15 dB gain should be the measured value subtracts 6 dB, which is easy to be ignored. Its input impedance can be equivalent to 6.7 kΩ ∥ 3.4 pF though fitting the measurement, whose accuracy is verified. The process of measurement provides a good reference to characterize the similar special amplifier with unmatched impedance.

Application of automatic gain control for radiometer diagnostic in SST-1 tokamak.

PubMed

Makwana, Foram R; Siju, Varsha; Edappala, Praveenlal; Pathak, S K

2017-12-01

This paper describes the characterisation of a negative feedback type of automatic gain control (AGC) circuit that will be an integral part of the heterodyne radiometer system operating at a frequency range of 75-86 GHz at SST-1 tokamak. The developed AGC circuit is a combination of variable gain amplifier and log amplifier which provides both gain and attenuation typically up to 15 dB and 45 dB, respectively, at a fixed set point voltage and it has been explored for the first time in tokamak radiometry application. The other important characteristics are that it exhibits a very fast response time of 390 ns to understand the fast dynamics of electron cyclotron emission and can operate at very wide input RF power dynamic range of around 60 dB that ensures signal level within the dynamic range of the detection system.

Transformer-Feedback Interstage Bandwidth Enhancement for MMIC Multistage Amplifiers

NASA Astrophysics Data System (ADS)

Nikandish, Gholamreza; Medi, Ali

2015-02-01

The transformer-feedback (TRFB) interstage bandwidth enhancement technique for broadband multistage amplifiers is presented. Theory of the TRFB bandwidth enhancement and the design conditions for maximum bandwidth, maximally flat gain, and maximally flat group delay are provided. It is shown that the TRFB bandwidth enhancement can provide higher bandwidth compared to the conventional techniques based on reactive impedance matching networks. A three-stage low-noise amplifier (LNA) monolithic microwave integrated circuit with the TRFB between its consecutive stages is designed and implemented in a 0.1- μm GaAs pHEMT process. The TRFB is realized by coupling between the drain bias lines of transistors. The reuse of bias lines leads to bandwidth enhancement without increasing the chip area and power consumption. The LNA features average gain of 23 dB and 3-dB bandwidth of 11-39 GHz. It provides a noise figure of 2.1-3.0 dB and an output 1-dB compression point of 8.6 dBm, while consuming 40 mA of current from a 2-V supply.

Phase-tunable temperature amplifier

NASA Astrophysics Data System (ADS)

Paolucci, F.; Marchegiani, G.; Strambini, E.; Giazotto, F.

2017-06-01

Coherent caloritronics, the thermal counterpart of coherent electronics, has drawn growing attention since the discovery of heat interference in 2012. Thermal interferometers, diodes, transistors and nano-valves have been theoretically proposed and experimentally demonstrated by exploiting the quantum phase difference between two superconductors coupled through a Josephson junction. So far, the quantum-phase modulator has been realized in the form of a superconducting quantum interference device (SQUID) or a superconducting quantum interference proximity transistor (SQUIPT). Thence, an external magnetic field is necessary in order to manipulate the heat transport. Here, we theoretically propose the first on-chip fully thermal caloritronic device: the phase-tunable temperature amplifier (PTA). Taking advantage of a recently discovered thermoelectric effect in spin-split superconductors coupled to a spin-polarized system, we generate the magnetic flux controlling the transport through a temperature-biased SQUIPT by applying a temperature gradient. We simulate the behavior of the device and define a number of figures of merit in full analogy with voltage amplifiers. Notably, our architecture ensures almost infinite input thermal impedance, maximum gain of about 11 and efficiency reaching the 95%. This concept paves the way for applications in radiation sensing, thermal logics and quantum information.

Optical properties of nanowire metamaterials with gain

NASA Astrophysics Data System (ADS)

Lima, Joaquim; Adam, Jost; Rego, Davi; Esquerre, Vitaly; Bordo, Vladimir

2016-11-01

The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide. The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications.

Multi-pass light amplifier

NASA Technical Reports Server (NTRS)

Plaessmann, Henry (Inventor); Grossman, William M. (Inventor); Olson, Todd E. (Inventor)

1996-01-01

A multiple-pass laser amplifier that uses optical focusing between subsequent passes through a single gain medium so that a reproducibly stable beam size is achieved within the gain region. A resonator or a White Cell cavity is provided, including two or more mirrors (planar or curvilinearly shaped) facing each other along a resonator axis and an optical gain medium positioned on a resonator axis between the mirrors or adjacent to one of the mirrors. In a first embodiment, two curvilinear mirrors, which may include adjacent lenses, are configured so that a light beam passing through the gain medium and incident on the first mirror is reflected by that mirror toward the second mirror in a direction approximately parallel to the resonator axis. A light beam translator, such as an optical flat of transparent material, is positioned to translate this light beam by a controllable amount toward or away from the resonator axis for each pass of the light beam through the translator. A second embodiment uses two curvilinear mirrors and one planar mirror, with a gain medium positioned in the optical path between each curvilinear mirror and the planar mirror. A third embodiment uses two curvilinear mirrors and two planar mirrors, with a gain medium positioned adjacent to a planar mirror. A fourth embodiment uses a curvilinear mirror and three planar mirrors, with a gain medium positioned adjacent to a planar mirror. A fourth embodiment uses four planar mirrors and a focusing lens system, with a gain medium positioned between the four mirrors. A fifth embodiment uses first and second planar mirrors, a focusing lens system and a third mirror that may be planar or curvilinear, with a gain medium positioned adjacent to the third mirror. A sixth embodiment uses two planar mirrors and a curvilinear mirror and a fourth mirror that may be planar or curvilinear, with a gain medium positioned adjacent to the fourth mirror. In a seventh embodiment, first and second mirrors face a third

160-190 GHz Monolithic Low Noise Amplifiers

NASA Technical Reports Server (NTRS)

Kok, Y. L.; Wang, H.; Huang, T. W.; Lai, R.; Chen, Y. C.; Sholley, M.; Block, T.; Streit, D. C.; Liu, P. H.; Allen, B. R.;

Erbium/ytterbium co-doped double clad fiber amplifier, its applications and effects in fiber optic communication systems

NASA Astrophysics Data System (ADS)

Dua, Puneit

Increased demand for larger bandwidth and longer inter-amplifiers distances translates to higher power budgets for fiber optic communication systems in order to overcome large splitting losses and achieve acceptable signal-to-noise ratios. Due to their unique design ytterbium sensitized erbium doped, double clad fiber amplifiers; offer significant increase in the output powers that can be obtained. In this thesis we investigate, a one-stage, high power erbium and ytterbium co-doped double clad fiber amplifier (DCFA) with output power of 1.4W, designed and built in our lab. Experimental demonstration and numerical simulation techniques have been used to systematically study the applications of such an amplifier and the effects of incorporating it in various fiber optic communication systems. Amplitude modulated subcarrier multiplexed (AM-SCM) CATV distribution experiment has been performed to verify the feasibility of using this amplifier in an analog/digital communication system. The applications of the amplifier as a Fabry-Perot and ring fiber laser with an all-fiber cavity, a broadband supercontinuum source and for generation of high power, short pulses at 5GHz have been experimentally demonstrated. A variety of observable nonlinear effects occur due to the high intensity of the optical powers confined in micron-sized cores of the fibers, this thesis explores in detail some of these effects caused by using the high power Er/Yb double clad fiber amplifier. A fiber optic based analog/digital CATV system experiences composite second order (CSO) distortion due to the interaction between the gain tilt---the variation of gain with wavelength, of the doped fiber amplifier and the wavelength chirp of the directly modulated semiconductor laser. Gain tilt of the Er/Yb co-doped fiber amplifier has been experimentally measured and its contribution to the CSO of the system calculated. Theoretical analysis of a wavelength division multiplexed system with closely spaced

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

NASA Astrophysics Data System (ADS)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

2016-01-01

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approachesmore » the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.« less

Hybrid solid state laser system using a neodymium-based master oscillator and an ytterbium-based power amplifier

DOEpatents

Payne, Stephen A.; Marshall, Christopher D.; Powell, Howard T.; Krupke, William F.

2001-01-01

In a master oscillator-power amplifier (MOPA) hybrid laser system, the master oscillator (MO) utilizes a Nd.sup.3+ -doped gain medium and the power amplifier (PA) utilizes a diode-pumped Yb.sup.3+ -doped material. The use of two different laser gain media in the hybrid MOPA system provides advantages that are otherwise not available. The Nd-doped gain medium preferably serves as the MO because such gain media offer the lowest threshold of operation and have already been engineered as practical systems. The Yb-doped gain medium preferably serves in the diode-pumped PA to store pump energy effectively and efficiently by virtue of the long emission lifetime, thereby reducing diode pump costs. One crucial constraint on the MO and PA gain media is that the Nd and Yb lasers must operate at nearly the same wavelength. The 1.047 .mu.m Nd:YLF/Yb:S-FAP [Nd:LiYF.sub.4 /Yb:Sr.sub.5 (PO.sub.4).sub.3 F] hybrid MOPA system is a preferred embodiment of the hybrid Nd/Yb MOPA.

Low-noise two-wired buffer electrodes for bioelectric amplifiers.

PubMed

Degen, Thomas; Torrent, Simon; Jäckel, Heinz

2007-07-01

Active buffer electrodes are known to improve the immunity of bioelectric recordings against power line interferences. A survey of published work reveals that buffer electrodes are almost exclusively designed using operational amplifiers (opamps). In this paper, we discuss the advantage of utilizing a single transistor instead. This allows for a simple electrode, which is small and requires only two wires. In addition, a single transistor adds considerably less noise when compared to an opamp with the same power consumption. We then discuss output resistance and gain as well as their respective effect on the common mode rejection ratio (CMRR). Finally, we demonstrate the use of two-wired buffer electrodes for a bioelectric amplifier.

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

PubMed Central

2014-01-01

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Reducing gain shifts in photomultiplier tubes

DOEpatents

Cohn, Charles E.

1976-01-01

A means is provided for reducing gain shifts in multiplier tubes due to varying event count rates. It includes means for limiting the number of cascaded, active dynodes of the multiplier tube to a predetermined number with the last of predetermined number of dynodes being the output terminal of the tube. This output is applied to an amplifier to make up for the gain sacrificed by not totally utilizing all available active stages of the tube. Further reduction is obtained by illuminating the predetermined number of dynodes with a light source of such intensity that noise appearing at the output dynode associated with the illumination is negligible.

A multichannel EEG acquisition scheme based on single ended amplifiers and digital DRL.

PubMed

Haberman, Marcelo Alejandro; Spinelli, Enrique Mario

2012-12-01

Single ended (SE) amplifiers allow implementing biopotential front-ends with a reduced number of parts, being well suited for preamplified electrodes or compact EEG headboxes. On the other hand, given that each channel has independent gain; mismatching between these gains results in poor common-mode rejection ratios (CMRRs) (about 30 dB considering 1% tolerance components). This work proposes a scheme for multichannel EEG acquisition systems based on SE amplifiers and a novel digital driven right leg (DDRL) circuit, which overcome the poor CMRR of the front-end stage providing a high common mode reduction at power line frequency (up to 80 dB). A functional prototype was built and tested showing the feasibility of the proposed technique. It provided EEG records with negligible power line interference, even in very aggressive EMI environments.

Electronic amplifiers: A compilation

NASA Technical Reports Server (NTRS)

1971-01-01

Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

A fully integrated neural recording amplifier with DC input stabilization.

PubMed

Mohseni, Pedram; Najafi, Khalil

2004-05-01

This paper presents a low-power low-noise fully integrated bandpass operational amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides a stable ac gain of 39.3 dB at 1 kHz. A subthreshold PMOS input transistor is utilized to clamp the large and random dc open circuit potentials that normally exist at the electrode-electrolyte interface. The low cutoff frequency of the amplifier is programmable up to 50 Hz, while its high cutoff frequency is measured to be 9.1 kHz. The tolerable dc input range is measured to be at least +/- 0.25 V with a dc rejection factor of at least 29 dB. The amplifier occupies 0.107 mm2 in die area, and dissipates 115 microW from a 3 V power supply. The total measured input-referred noise voltage in the frequency range of 0.1-10 kHz is 7.8 microVrms. It is fabricated using AMI 1.5 microm double-poly double-metal n-well CMOS process. This paper presents full characterization of the dc, ac, and noise performance of this amplifier through in vitro measurements in saline using two different neural recording electrodes.

Optimal Operation of a Josephson Parametric Amplifier for Vacuum Squeezing

NASA Astrophysics Data System (ADS)

Malnou, M.; Palken, D. A.; Vale, Leila R.; Hilton, Gene C.; Lehnert, K. W.

2018-04-01

A Josephson parametric amplifier (JPA) can create squeezed states of microwave light, lowering the noise associated with certain quantum measurements. We experimentally study how the JPA's pump influences the phase-sensitive amplification and deamplification of a coherent tone's amplitude when that amplitude is commensurate with vacuum fluctuations. We predict and demonstrate that, by operating the JPA with a single current pump whose power is greater than the value that maximizes gain, the amplifier distortion is reduced and, consequently, squeezing is improved. Optimizing the singly pumped JPA's operation in this fashion, we directly observe 3.87 ±0.03 dB of vacuum squeezing over a bandwidth of 30 MHz.

Radiofrequency amplifier based on a dc superconducting quantum interference device

DOEpatents

Hilbert, C.; Martinis, J.M.; Clarke, J.

1984-04-27

A low noise radiofrequency amplifer, using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID and an input coil are maintained at superconductivity temperatures in a superconducting shield, with the input coil inductively coupled to the superconducting ring of the dc SQUID. A radiofrequency signal from outside the shield is applied to the input coil, and an amplified radiofrequency signal is developed across the dc SQUID ring and transmitted to exteriorly of the shield. A power gain of 19.5 +- 0.5 dB has been achieved with a noise temperature of 1.0 +- 0.4 K at a frequency of 100 MHz.

Er-doped YVO4 amplifier diode pumped at 976 nm

NASA Astrophysics Data System (ADS)

Newburgh, G. A.; Dubinskii, Mark

2016-05-01

We report on the use of a 976 nm diode pumped Er:YVO4 slab for the amplification of 1603 nm laser radiation with a small signal gain of 2.1. To the best of our knowledge, this represents the first use of Er:YVO4 as a non-resonantly pumped amplifier.

Gain in three-dimensional metamaterials utilizing semiconductor quantum structures

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Klingbeil, Matthias; Kerbst, Jochen; Rottler, Andreas; Costa, Ricardo; Koitmäe, Aune; Bröll, Markus; Heyn, Christian; Stark, Yuliya; Heitmann, Detlef; Mendach, Stefan

2011-10-01

We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a tightly bent superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

DTIC Science & Technology

2017-10-01

showing double the power of a single 1.2-mm HEMT with 55% PAE at a comparable gain compression level. 3. Summary and Conclusion A preliminary design of...combined, 2.4-mm HEMT power amplifier should achieve comparable performance based on a preliminary design using ideal, lossless matching elements. For...ARL-TR-8180 ● OCT 2017 US Army Research Laboratory Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs by

Fibercore AstroGain fiber: multichannel erbium doped fibers for optical space communications

NASA Astrophysics Data System (ADS)

Hill, Mark; Gray, Rebecca; Hankey, Judith; Gillooly, Andy

2014-03-01

Fibercore have developed AstroGainTM fiber optimized for multichannel amplifiers used in optical satellite communications and control. The fiber has been designed to take full advantage of the photo-annealing effect that results from pumping in the 980nm region. The proprietary trivalent structure of the core matrix allows optimum recovery following radiation damage to the fiber, whilst also providing a market leading Erbium Doped Fiber Amplifier (EDFA) efficiency. Direct measurements have been taken of amplifier efficiency in a multichannel assembly, which show an effective photo-annealing recovery of up to 100% of the radiation induced attenuation through excitation of point defects.

Imaging non-Gaussian output fields produced by Josephson parametric amplifiers: experiments

NASA Astrophysics Data System (ADS)

Toyli, D. M.; Venkatramani, A. V.; Boutin, S.; Eddins, A.; Didier, N.; Clerk, A. A.; Blais, A.; Siddiqi, I.

2015-03-01

In recent years, squeezed microwave states have become the focus of intense research motivated by applications in continuous-variables quantum computation and precision qubit measurement. Despite numerous demonstrations of vacuum squeezing with superconducting parametric amplifiers such as the Josephson parametric amplifier (JPA), most experiments have also suggested that the squeezed output field becomes non-ideal at the large (> 10dB) signal gains required for low-noise qubit measurement. Here we describe a systematic experimental study of JPA squeezing performance in this regime for varying lumped-element device designs and pumping methods. We reconstruct the JPA output fields through homodyne detection of the field moments and quantify the deviations from an ideal squeezed state using maximal entropy techniques. These methods provide a powerful diagnostic tool to understand how effects such as gain compression impact JPA squeezing. Our results highlight the importance of weak device nonlinearity for generating highly squeezed states. This work is supported by ARO and ONR.

Raman-noise-induced noise-figure limit for chi (3) parametric amplifiers

NASA Astrophysics Data System (ADS)

Voss, Paul L.; Kumar, Prem

2004-03-01

The nonzero response time of the Kerr [chi (3)] nonlinearity determines the quantum-limited noise figure of c3 parametric amplifiers. This nonzero response time of the nonlinearity requires coupling of the parametric amplification process to a molecular-vibration phonon bath, causing the addition of excess noise through Raman gain or loss at temperatures above 0 K. The effect of this excess noise on the noise figure can be surprisingly significant. We derive analytical expressions for this quantum-limited noise figure for phase-insensitive operation of a chi (3) amplifier and show good agreement with published noise-figure measurements.

1.5-μm high-average power laser amplifier using a Er,Yb:glass planar waveguide for coherent Doppler lidar

NASA Astrophysics Data System (ADS)

Sakimura, Takeshi; Watanabe, Yojiro; Ando, Toshiyuki; Kameyama, Shumpei; Asaka, Kimio; Tanaka, Hisamichi; Yanagisawa, Takayuki; Hirano, Yoshihito; Inokuchi, Hamaki

2012-11-01

We have developed a 1.5-μm eye-safe wavelength high average power laser amplifier using an Er,Yb:glass planar waveguide for coherent Doppler LIDAR. Large cooling surface of the planar waveguide enabled high average power pumping for Er,Yb:glass which has low thermal fracture limit. Nonlinear effects are suppressed by the large beam size which is designed by the waveguide thickness and the beam width of the planar direction. Multi-bounce optical path configuration and high-intensity pumping provide high-gain and high-efficient operation using three-level laser material. With pulsed operation, the maximum pulse energy of 1.9 mJ was achieved at the repetition rate of 4 kHz. Output average power of the amplified signal was 7.6W with the amplified gain of more than 20dB. This amplifier is suitable for coherent Doppler LIDAR to enhance the measurable range.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2010-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2011-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hybrid matrix amplifier

DOEpatents

Martens, J.S.; Hietala, V.M.; Plut, T.A.

1995-01-03

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N[times]M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise. 6 figures.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Aoki, Ichiro (Inventor); Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor)

2013-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hybrid matrix amplifier

DOEpatents

Martens, Jon S.; Hietala, Vincent M.; Plut, Thomas A.

1995-01-01

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N.times.M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2008-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin temperature range.

PubMed

Korolev, A M; Shnyrkov, V I; Shulga, V M

2011-01-01

We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.

Analysis on frequency response of trans-impedance amplifier (TIA) for signal-to-noise ratio (SNR) enhancement in optical signal detection system using lock-in amplifier (LIA)

NASA Astrophysics Data System (ADS)

Kim, Ji-Hoon; Jeon, Su-Jin; Ji, Myung-Gi; Park, Jun-Hee; Choi, Young-Wan

2017-02-01

Lock-in amplifier (LIA) has been widely used in optical signal detection systems because it can measure small signal under high noise level. Generally, The LIA used in optical signal detection system is composed of transimpedance amplifier (TIA), phase sensitive detector (PSD) and low pass filter (LPF). But commercial LIA using LPF is affected by flicker noise. To avoid flicker noise, there is 2ω detection LIA using BPF. To improve the dynamic reserve (DR) of the 2ω LIA, the signal to noise ratio (SNR) of the TIA should be improved. According to the analysis of frequency response of the TIA, the noise gain can be minimized by proper choices of input capacitor (Ci) and feed-back network in the TIA in a specific frequency range. In this work, we have studied how the SNR of the TIA can be improved by a proper choice of frequency range. We have analyzed the way to control this frequency range through the change of passive component in the TIA. The result shows that the variance of the passive component in the TIA can change the specific frequency range where the noise gain is minimized in the uniform gain region of the TIA.

Doping management for high-power fiber lasers: 100 W, few-picosecond pulse generation from an all-fiber-integrated amplifier.

PubMed

Elahi, P; Yılmaz, S; Akçaalan, O; Kalaycıoğlu, H; Oktem, B; Senel, C; Ilday, F Ö; Eken, K

2012-08-01

Thermal effects, which limit the average power, can be minimized by using low-doped, longer gain fibers, whereas the presence of nonlinear effects requires use of high-doped, shorter fibers to maximize the peak power. We propose the use of varying doping levels along the gain fiber to circumvent these opposing requirements. By analogy to dispersion management and nonlinearity management, we refer to this scheme as doping management. As a practical first implementation, we report on the development of a fiber laser-amplifier system, the last stage of which has a hybrid gain fiber composed of high-doped and low-doped Yb fibers. The amplifier generates 100 W at 100 MHz with pulse energy of 1 μJ. The seed source is a passively mode-locked fiber oscillator operating in the all-normal-dispersion regime. The amplifier comprises three stages, which are all-fiber-integrated, delivering 13 ps pulses at full power. By optionally placing a grating compressor after the first stage amplifier, chirp of the seed pulses can be controlled, which allows an extra degree of freedom in the interplay between dispersion and self-phase modulation. This way, the laser delivers 4.5 ps pulses with ~200 kW peak power directly from fiber, without using external pulse compression.

Numerical modeling of transverse mode competition in strongly pumped multimode fiber lasers and amplifiers.

PubMed

Gong, Mali; Yuan, Yanyang; Li, Chen; Yan, Ping; Zhang, Haitao; Liao, Suying

2007-03-19

A model based on propagation-rate equations with consideration of transverse gain distribution is built up to describe the transverse mode competition in strongly pumped multimode fiber lasers and amplifiers. An approximate practical numerical algorithm by multilayer method is presented. Based on the model and the numerical algorithm, the behaviors of multitransverse mode competition are demonstrated and individual transverse modes power distributions of output are simulated numerically for both fiber lasers and amplifiers under various conditions.

Femtosecond laser pulse distortion in Ti:sapphire multipass amplifier by atomic phase shifts

NASA Astrophysics Data System (ADS)

Hwang, Seungjin; Jeong, Jihoon; Cho, Seryeyohan; Lee, Jongmin; Yu, Tae Jun

2017-11-01

We have derived modified Frantz-Nodvik equations that simultaneously account for atomic phase shift (APS) and gain depletion as the chirped laser pulse passes through a gain medium, and have analyzed the effect of temporal pulse distortion in a Ti:sapphire multipass amplifier chain. The combination of APS and gain depletion distorted a temporal pulse and decreased the peak power. The pulse width increased from 21.3 fs to 22.8 fs and the peak power reduced to 89% for the PW class Ti:sapphire CPA laser system in the particular conditions.

A nonlinear macromodel of the bipolar integrated circuit operational amplifier for electromagnetic interference analysis

NASA Astrophysics Data System (ADS)

Chen, G. K. C.

1981-06-01

A nonlinear macromodel for the bipolar transistor integrated circuit operational amplifier is derived from the macromodel proposed by Boyle. The nonlinear macromodel contains only two nonlinear transistors in the input stage in a differential amplifier configuration. Parasitic capacitance effects are represented by capacitors placed at the collectors and emitters of the input transistors. The nonlinear macromodel is effective in predicting the second order intermodulation effect of operational amplifiers in a unity gain buffer amplifier configuration. The nonlinear analysis computer program NCAP is used for the analysis. Accurate prediction of demodulation of amplitude modulated RF signals with RF carrier frequencies in the 0.05 to 100 MHz range is achieved. The macromodel predicted results, presented in the form of second order nonlinear transfer function, come to within 6 dB of the full model predictions for the 741 type of operational amplifiers for values of the second order transfer function greater than -40 dB.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, W.; Yin, J.; Li, C.

This paper presents a novel front-end electronics based on a front-end ASIC with post digital filtering and calibration dedicated to CZT detectors for PET imaging. A cascade amplifier based on split-leg topology is selected to realize the charge-sensitive amplifier (CSA) for the sake of low noise performances and the simple scheme of the power supplies. The output of the CSA is connected to a variable-gain amplifier to generate the compatible signals for the A/D conversion. A multi-channel single-slope ADC is designed to sample multiple points for the digital filtering and shaping. The digital signal processing algorithms are implemented by amore » FPGA. To verify the proposed scheme, a front-end readout prototype ASIC is designed and implemented in 0.35 μm CMOS process. In a single readout channel, a CSA, a VGA, a 10-bit ADC and registers are integrated. Two dummy channels, bias circuits, and time controller are also integrated. The die size is 2.0 mm x 2.1 mm. The input range of the ASIC is from 2000 e{sup -} to 100000 e{sup -}, which is suitable for the detection of the X-and gamma ray from 11.2 keV to 550 keV. The linearity of the output voltage is less than 1 %. The gain of the readout channel is 40.2 V/pC. The static power dissipation is about 10 mW/channel. The above tested results show that the electrical performances of the ASIC can well satisfy PET imaging applications. (authors)« less

Precision limits of lock-in amplifiers below unity signal-to-noise ratios

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillies, G.T.; Allison, S.W.

1986-02-01

An investigation of noise-related performance limits of commercial-grade lock-in amplifiers has been carried out. The dependence of the output measurement error on the input signal-to-noise ratio was established in each case and measurements of noise-related gain variations were made.

SEMICONDUCTOR INTEGRATED CIRCUITS: A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

NASA Astrophysics Data System (ADS)

Tao, Tong; Baoyong, Chi; Ziqiang, Wang; Ying, Zhang; Hanjun, Jiang; Zhihua, Wang

2010-05-01

A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth in 0.35 μm CMOS is presented. The circuit consists of two variable gain amplifiers (VGA) in cascade and a Gm-C elliptic low-pass filter (LPF). The filter-order and the cut-off frequency of the LPF can be reconfigured to satisfy the requirements of various applications. In order to achieve the optimum power consumption, the bandwidth of the VGAs can also be dynamically reconfigured and some Gm cells can be cut off in the given application. Simulation results show that the analog baseband circuit consumes 16.8 mW for WLAN, 8.9 mW for WCDMA and only 6.5 mW for Bluetooth, all with a 3 V power supply. The analog baseband circuit could provide -10 to +40 dB variable gain, third-order low pass filtering with 1 MHz cut-off frequency for Bluetooth, fourth-order low pass filtering with 2.2 MHz cut-off frequency for WCDMA, and fifth-order low pass filtering with 11 MHz cut-off frequency for WLAN, respectively.

1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET

NASA Astrophysics Data System (ADS)

Harima, Fumio; Bito, Yasunori; Takahashi, Hidemasa; Iwata, Naotaka

We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p+-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5mm×1.5mm×0.4mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20dBm is achieved with an associated gain of 22dB. Also, sufficiently low leakage current of 0.25μA at 27°C is exhibited, which is comparable to conventional HBT power amplifiers.

Internal gain in Er-doped As₂S₃ chalcogenide planar waveguides.

PubMed

Yan, Kunlun; Vu, Khu; Madden, Steve

2015-03-01

Low-loss erbium-doped As₂S₃ planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration.

Multifrequency Raman amplifiers

NASA Astrophysics Data System (ADS)

Barth, Ido; Fisch, Nathaniel J.

2018-03-01

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the total fluence is split between the different spectral components.

The design of CMOS general-purpose analog front-end circuit with tunable gain and bandwidth for biopotential signal recording systems.

PubMed

Chen, Wei-Ming; Yang, Wen-Chia; Tsai, Tzung-Yun; Chiueh, Herming; Wu, Chung-Yu

2011-01-01

In this paper an 8-channel CMOS general-purpose analog front-end (AFE) circuit with tunable gain and bandwidth for biopotential signal recording systems is presented. The proposed AFE consists of eight chopper stabilized pre-amplifiers, an 8-to-1 analog multiplexer, and a programmable gain amplifier. It can be used to sense and amplify different kinds of biopotential signals, such as electrocorticogram (ECoG), electrocardiogram (ECG) and electromyogram (EMG). The AFE chip is designed and fabricated in 0.18-μm CMOS technology. The measured maximum gain of AFE is 60.8 dB. The low cutoff frequency can achieve as low as 0.8 Hz and high cutoff frequency can be adjusted from 200 Hz to 10 kHz to suit for different kinds of biopotential signals. The measured input-referred noise is 0.9 μV(rms), with the power consumption of 18μW per channel at 1.8-V power supply. And the noise efficiency factor (NEF) is only 1.3 for pre-amplifier.

A Hybrid Fiber/Solid-State Regenerative Amplifier with Tunable Pulse Widths for Satellite Laser Ranging

NASA Technical Reports Server (NTRS)

Coyle, Barry; Poulios, Demetrios

2013-01-01

A fiber/solid-state hybrid seeded regenerative amplifier, capable of achieving high output energy with tunable pulse widths, has been developed for satellite laser ranging applications. The regenerative amplifier cavity uses a pair of Nd:YAG zigzag slabs oriented orthogonally to one another in order to make thermal lensing effects symmetrical and simplify optical correction schemes. The seed laser used is a fiber-coupled 1,064-nm narrowband (<0.02 nm) diode laser that is discretely driven in a new short-pulsed mode, enabling continuously tunable seed pulse widths in the 0.2-to-0.4-ns range. The amplifier gain unit consists of a pair of Brewster-cut 6-bounce zigzag Nd:YAG laser slabs, oriented 90deg relative to each other in the amplifier head. This arrangement creates a net-symmetrical thermal lens effect (an opposing singleaxis effect in each slab), and makes thermo-optical corrections simple by optimizing the curvature of the nearest cavity mirror. Each slab is pumped by a single 120-W, pulsed 808-nm laser diode array. In this configuration, the average pump beam distribution in the slabs had a 1-D Gaussian shape, which matches the estimated cavity mode size. A half-wave plate between the slabs reduces losses from Fresnel reflections due to the orthogonal slabs Brewster-cut end faces. Successful "temporal" seeding of the regenerative amplifier cavity results in a cavity Q-switch pulse envelope segmenting into shorter pulses, each having the width of the input seed, and having a uniform temporal separation corresponding to the cavity round-trip time of approx. =10 ns. The pulse energy is allowed to build on successive passes in the regenerative amplifier cavity until a maximum is reached, (when cavity gains and losses are equal), after which the pulse is electro- optically switched out on the next round trip The overall gain of the amplifier is approx. =82 dB (or a factor of 1.26 million). After directing the amplified output through a LBO frequency doubling

INITIAL GAIN MEASUREMENTS OF A 800 NM SASE FEL, VISA.

DOE Office of Scientific and Technical Information (OSTI.GOV)

FRIGOLA,P.; MUROKH,A.; ET AL

2000-08-13

The VISA (Visible to Infrared SASE Amplifier) FEL is designed to obtain high gain at a radiation wavelength of 800nm. The FEL uses the high brightness electron beam of the Accelerator Test Facility (ATF), with energy of 72MeV. VISA uses a novel, 4 m long, strong focusing undulator with a gap of 6mm and a period of 1.8cm. To obtain large gain the beam and undulator axis have to be aligned to better than 50{micro}m. Results from initial measurements on the alignment, gain, and spectrum will be presented and compared to theoretical calculations and simulations.

A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Saptarshi; Zhang, Wei; Thoutam, Laxman Raju

2015-04-10

In this article we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of two dimensional crystals. The amplifier, consisting of a BP load resistor and a BP field effect transistor (FET) was integrated on a single flake. The gain of the amplifier was found to be ~9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high ON current of 200 µA/µm at V DD = -0.5V in BP FETs. Our results demonstrates the possibility for the implementation of BPmore » in the future generations of analog devices.« less

LED-pumped Alexandrite laser oscillator and amplifier

NASA Astrophysics Data System (ADS)

Pichon, Pierre; Blanchot, Jean-Philippe; Balembois, François; Druon, Frédéric; Georges, Patrick

2018-02-01

In this paper, we report the first LED-pumped transition-metal-doped laser oscillator and amplifier based on an alexandrite crystal (Cr3+:BeAl2O4). A Ce:YAG luminescent concentrator illuminated by blue LEDs is used to reach higher pump powers than with LEDs alone. The luminescent 200-mm-long-composit luminescent concentrator involving 2240 LEDs can delivers up to 268 mJ for a peak irradiance of 8.5 kW/cm2. In oscillator configuration, an LED-pumped alexandrite laser delivering an energy of 2.9 mJ at 748 nm in free running operation is demonstrated. In the cavity, we measured a double pass small signal gain of 1.28, in good agreement with numerical simulations. As amplifier, the system demonstrated to boost a CW Ti:sapphire laser by a factor of 4 at 750 nm in 8 passes with a large tuning range from 710 nm to 800 nm.

Multifrequency Raman amplifiers

DOE PAGES

Barth, Ido; Fisch, Nathaniel J.

2018-03-08

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Multifrequency Raman amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barth, Ido; Fisch, Nathaniel J.

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Testing methodologies and systems for semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

Investigations of SBS and Laser Gain Competition in High-Power Phase Modulated Fiber Amplifiers (Postprint)

DTIC Science & Technology

2014-02-26

through RF filtering . Subsequently, this modulated signal is used in a cutback experiment with a passive fiber . Studies describing enhancement factors...to filter out higher order modes [3]. However, in order to maintain single-mode (diffraction limited) operation, conventional step-index fiber core...Letters 36, 2686-2688 (2011). [3] J. P. Koplaw, D. Kliner, and L. Goldberg, “Single-mode operation of a coiled multimode fiber amplifier,” Optics Letters

Development of a Single-Pass Amplifier for an Optical Stochastic Cooling Proof-of-Principle Experiment at Fermilab's IOTA Facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andorf, M. B.; Lebedev, V. A.; Piot, P.

2015-06-01

Optical stochastic cooling (OSC) is a method of beam cooling which is expected to provide cooling rates orders of magnitude larger than ordinary stochastic cooling. Light from an undulator (the pickup) is amplified and fed back onto the particle beam via another undulator (the kicker). Fermilab is currently exploring a possible proof-of-principle experiment of the OSC at the integrable-optics test accelerator (IOTA) ring. To implement effective OSC a good correction of phase distortions in the entire band of the optical amplifier is required. In this contribution we present progress in experimental characterization of phase distortions associated to a Titanium Sapphiremore » crystal laser-gain medium (a possible candidate gain medium for the OSC experiment to be performed at IOTA). We also discuss a possible option for a mid-IR amplifier« less

Room temperature broadband terahertz gains in graphene heterostructures based on inter-layer radiative transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Linlong; Chongqing institute of green and intelligent technology, Chinese Academy of Sciences, Chongqing, 401122; Du, Jinglei, E-mail: dujl@scu.edu.cn

We exploit inter-layer radiative transitions to provide gains to amplify terahertz waves in graphene heterostructures. This is achieved by properly doping graphene sheets and aligning their energy bands so that the processes of stimulated emissions can overwhelm absorptions. We derive an expression for the gain estimation and show the gain is insensitive to temperature variation. Moreover, the gain is broadband and can be strong enough to compensate the free carrier loss, indicating graphene based room temperature terahertz lasers are feasible.

Characterization and optimization of the magnetron directional amplifier

NASA Astrophysics Data System (ADS)

Hatfield, Michael Craig

Many applications of microwave wireless power transmission (WPT) are dependent upon a high-powered electronically-steerable phased array composed of many radiating modules. The phase output from the high-gain amplifier in each module must be accurately controlled if the beam is to be properly steered. A highly reliable, rugged, and inexpensive design is essential for making WPT applications practical. A conventional microwave oven magnetron may be combined with a ferrite circulator and other external circuitry to create such a system. By converting it into a two-port amplifier, the magnetron is capable of delivering at least 30 dB of power gain while remaining phase-locked to the input signal over a wide frequency range. The use of the magnetron in this manner is referred to as a MDA (Magnetron Directional Amplifier). The MDA may be integrated with an inexpensive slotted waveguide array (SWA) antenna to form the Electronically-Steerable Phased Array Module (ESPAM). The ESPAM provides a building block approach to creating phased arrays for WPT. The size and shape of the phased array may be tailored to satisfy a diverse range of applications. This study provided an in depth examination into the capabilities of the MDA/ESPAM. The basic behavior of the MDA was already understood, as well as its potential applicability to WPT. The primary objective of this effort was to quantify how well the MDA could perform in this capacity. Subordinate tasks included characterizing the MDA behavior in terms of its system inputs, optimizing its performance, performing sensitivity analyses, and identifying operating limitations. A secondary portion of this study examined the suitability of the ESPAM in satisfying system requirements for the solar power satellite (SPS). Supporting tasks included an analysis of SPS requirements, modeling of the SWA antenna, and the demonstration of a simplified phased array constructed of ESPAM elements. The MDA/ESPAM is well suited for use as an

Auto-Zero Differential Amplifier

NASA Technical Reports Server (NTRS)

Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

2017-01-01

An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

Automatic Gain Control in Compact Spectrometers.

PubMed

Protopopov, Vladimir

2016-03-01

An image intensifier installed in the optical path of a compact spectrometer may act not only as a fast gating unit, which is widely used for time-resolved measurements, but also as a variable attenuator-amplifier in a continuous wave mode. This opens the possibility of an automatic gain control, a new feature in spectroscopy. With it, the user is relieved from the necessity to manually adjust signal level at a certain value that it is done automatically by means of an electronic feedback loop. It is even more important that automatic gain control is done without changing exposure time, which is an additional benefit in time-resolved experiments. The concept, algorithm, design considerations, and experimental results are presented. © The Author(s) 2016.

Sub-MW peak power diffraction-limited chirped-pulse monolithic Yb-doped tapered fiber amplifier.

PubMed

Bobkov, Konstantin; Andrianov, Alexey; Koptev, Maxim; Muravyev, Sergey; Levchenko, Andrei; Velmiskin, Vladimir; Aleshkina, Svetlana; Semjonov, Sergey; Lipatov, Denis; Guryanov, Alexey; Kim, Arkady; Likhachev, Mikhail

2017-10-30

We demonstrate a novel amplification regime in a counter-pumped, relatively long (2 meters), large mode area, highly Yb-doped and polarization-maintaining tapered fiber, which offers a high peak power directly from the amplifier. The main feature of this regime is that the amplifying signal propagates through a thin part of the tapered fiber without amplification and experiences an extremely high gain in the thick part of the tapered fiber, where most of the pump power is absorbed. In this regime, we have demonstrated 8 ps pulse amplification to a peak power of up to 0.76 MW, which is limited by appearance of stimulated Raman scattering. In the same regime, 28 ps chirped pulses are amplified to a peak power of 0.35 MW directly from the amplifier and then compressed with 70% efficiency to 315 ± 10 fs, corresponding to an estimated peak power of 22 MW.

A novel "gain chip" concept for high-power lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Li, Min; Li, Mingzhong; Wang, Zhenguo; Yan, Xiongwei; Jiang, Xinying; Zheng, Jiangang; Cui, Xudong; Zhang, Xiaomin

2017-05-01

High-power lasers, including high-peak power lasers (HPPL) and high-average power lasers (HAPL), attract much interest for enormous variety of applications in inertial fusion energy (IFE), materials processing, defense, spectroscopy, and high-field physics research. To meet the requirements of high efficiency and quality, a "gain chip" concept is proposed to properly design the pumping, cooling and lasing fields. The gain chip mainly consists of the laser diode arrays, lens duct, rectangle wave guide and slab-shaped gain media. For the pumping field, the pump light will be compressed and homogenized by the lens duct to high irradiance with total internal reflection, and further coupled into the gain media through its two edge faces. For the cooling field, the coolant travels along the flow channel created by the adjacent slabs in the other two edge-face direction, and cool the lateral faces of the gain media. For the lasing field, the laser beam travels through the lateral faces and experiences minimum thermal wavefront distortions. Thereby, these three fields are in orthogonality offering more spatial freedom to handle them during the construction of the lasers. Transverse gradient doping profiles for HPPL and HAPL have been employed to achieve uniform gain distributions (UGD) within the gain media, respectively. This UGD will improve the management for both amplified spontaneous emission (ASE) and thermal behavior. Since each "gain chip" has its own pump source, power scaling can be easily achieved by placing identical "gain chips" along the laser beam axis without disturbing the gain and thermal distributions. To detail our concept, a 1-kJ pulsed amplifier is designed and optical-to-optical efficiency up to 40% has been obtained. We believe that with proper coolant (gas or liquid) and gain media (Yb:YAG, Nd:glass or Nd:YAG) our "gain chip" concept might provide a general configuration for high-power lasers with high efficiency and quality.

A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

NASA Astrophysics Data System (ADS)

Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

2011-04-01

This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

Injection seeded, diode pumped regenerative ring Nd:YAG amplifier for spaceborne laser ranging technology development

NASA Technical Reports Server (NTRS)

Coyle, D. Barry; Kay, Richard B.; Degnan, John J.; Krebs, Danny J.; Seery, Bernard D.

1992-01-01

A small, all solid state, regenerative ring amplifier designed as a prototype for space application is discussed. Novel features include dual side pumping of the Nd:YAG crystal and a triangular ring cavity design which minimizes the number of optical components and losses. The amplifier is relatively small (3 ns round trip time) even though standard optical elements are employed. The ring regeneratively amplifies a 100 ps single pulse by approximately 10(exp 5) at a repetition rate of 10 to 100 Hz. The amplifier is designed to be injection seeded with a pulsed, 100 ps laser diode at 1.06 microns, but another Nd:YAG laser system supplying higher pulse energies was employed for laboratory experiment. This system is a prototype laser oscillator for the Geoscience Laser Ranging System (GLRS) platform. Results on measurements of beam quality, astigmatism, and gain are given.

Analysis of the dimensional dependence of semiconductor optical amplifier recovery speeds

NASA Astrophysics Data System (ADS)

Giller, Robin; Manning, Robert J.; Talli, Giuseppe; Webb, Roderick P.; Adams, Michael J.

2007-02-01

We investigate the dependence of the speed of recovery of optically excited semiconductor optical amplifiers (SOAs) on the active region dimensions. We use a picosecond pump-probe arrangement to experimentally measure and compare the gain and phase dynamics of four SOAs with varying active region dimensions. A sophisticated time domain SOA model incorporating amplified spontaneous emission (ASE) agrees well with the measurements and shows that, in the absence of a continuous wave (CW) beam, the ASE plays a similar role to such a holding beam. The experimental results are shown to be consistent with a recovery rate which is inversely proportional to the optical area. A significant speed increase is predicted for an appropriate choice of active region dimensions.

Low noise tuned amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1984-01-01

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

A digitally assisted, signal folding neural recording amplifier.

PubMed

Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

2014-08-01

A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

Gain of GRHL2 is associated with early recurrence of hepatocellular carcinoma.

PubMed

Tanaka, Yasuo; Kanai, Fumihiko; Tada, Motohisa; Tateishi, Ryosuke; Sanada, Masashi; Nannya, Yasuhito; Ohta, Miki; Asaoka, Yoshinari; Seto, Motoko; Shiina, Shuichiro; Yoshida, Haruhiko; Kawabe, Takao; Yokosuka, Osamu; Ogawa, Seishi; Omata, Masao

2008-11-01

The aim of this study is to identify genomic changes that might be implicated in hepatocellular carcinoma (HCC) progression, and evaluate the associations with clinico-pathological features. The genomic DNA of 17 hepatoma cell lines was analyzed using Affymetrix GeneChip Human Mapping 50K high-density oligonucleotide arrays. We selected representative genes from recurrent amplified regions and measured the copy number of these genes in 70 HCC clinical samples. We found 10 recurrent high-grade gain regions spanning less than 3 Mb in at least two hepatoma cell lines, and selected 10 representative genes. The copy number was almost normal in non-cancerous tissue and frequently amplified in Edmondson grade II or III HCC compared to Edmondson grade I HCC. Gain of TAX1BP1 in 7p15.2-1 was associated with larger tumor size and positivity of HCV antibody, and gain of CCND1 in 11q13.2-3 was associated with larger tumor size by multivariate analysis. Furthermore, a gain of GRHL2 in 8q22.3 was associated with early recurrence of HCC, controlling for clinical parameters. Decreased GRHL2 expression by RNA interference inhibits the growth of hepatoma cells, suggesting its association with cell proliferation. A gain of GRHL2 might be a predictive marker for HCC recurrence.

Thin Disk Ti:Sapphire amplifiers for Joule-class ultrashort pulses with high repetition rate (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nagymihály, Roland S.; Cao, Huabao; Kalashnikov, Mikhail P.; Khodakovskiy, Nikita; Ehrentraut, Lutz; Osvay, Károly; Chvykov, Vladimir V.

2017-05-01

High peak power CPA laser systems can deliver now few petawatt pulses [1]. Reaching the high energies with broad spectral bandwidth necessary for these pulses was possible by the use of large aperture Ti:Sa crystals as final amplifier media. Wide applications for these systems will be possible if the repetition rate could be increased. Therefore, thermal deposition in Ti:Sa amplifiers is a key issue, which has to be solved in case of high average power pumping. The thin disk (TD) laser technology, which is intensively developed nowadays by using new laser materials, is able to overcome thermal distortions and damages of laser crystals [2]. TD technique also has the potential to be used in systems with both high peak and average power. For this, the commonly used laser materials with low absorption and emission cross sections, also low heat conductivity, like Yb:YAG, need to be replaced by a gain medium that supports broad enough emission spectrum and high thermal conductivity to obtain few tens of fs pulses with high repetition rates. Parasitic effects during the amplification process however seriously limit the energy that can be extracted from the gain medium and also they distort the gain profile. Nevertheless, the application of the Extraction During Pumping (EDP) technique can mitigate the depopulation losses in the gain medium with high aspect ratio [3]. We proposed to use Ti:Sa in combination with TD and EDP techniques to reach high energies at high repetition rates, and we presented numerical simulations for different amplifier geometries and parameters of the amplification [4,5]. We present the results of the proof-of-principle experiment, where a EDP-TD Ti:Sa amplifier was tested for the first time. In our experiment, the final cryogenically cooled Ti:Sa amplifier in a 100 TW/10 Hz/28 fs laser system was replaced with the EDP-TD room temperature cooled arrangement. Amplified seed pulse energy of 2.6 J was reached only for 3 passes through TD with 0.5 J of

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

NASA Technical Reports Server (NTRS)

Ma, Zhenqiang; Jiang, Ningyue; Ponchak, George E.; Alterovitz, Samuel A.

2005-01-01

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

2009-01-01

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Theory, Design and Operation of a High-Power Second - Gyro-Twt Amplifier.

NASA Astrophysics Data System (ADS)

Wang, Qinsong

1995-01-01

Based on the cyclotron resonance maser (CRM) instability, the gyrotron traveling wave tube (gyro-TWT) amplifier is an efficient high power microwave and millimeter wave coherent radiation source. As evidenced in previous experiments, gyro-TWTs, however, can be very susceptible to spontaneous oscillations, and their output powers have thus been limited to relatively low levels. In this dissertation work, thorough theoretical and experimental studies have been conducted to demonstrate and confirm a novel "marginal stability design" (MSD) concept that a harmonic gyro-TWT amplifier is more stable to spontaneous oscillation than a fundamental harmonic gyro-TWT amplifier. Since their interactions are, in general, weaker and allow higher levels of electron beam current, harmonic gyro-TWTs can yield, in principle, a significantly higher RF output power than a fundamental gyro-TWT. The study results also show that a magnetron injection gun (MIG) type electron beam is applicable to harmonic gyro-TWTs. A complete analytic linear theory employing Laplace transforms and a three dimensional nonlinear theory using a slow time-scale formalism are developed in Chapt. 2 for the general CRM interaction to address the issue of stability. Two designs were developed to demonstrate the MSD procedure. The design and development of the proof -of-principle experiment are discussed in Chapt. 3. The accompanying cold test results indicate that all the components have met their respective design goals. The RF diagnostic circuit employed to characterize the gyro-TWT amplifier is also described. Chapter 4 presents the hot-test results of the second-harmonic TE_{21} gyro-TWT amplifier experiment in which an 80 kV, 20 A MIG beam with alpha(equivupsilon _|/upsilon_|) = 1 was used to generate a peak RF output power of 207 kW in Ku-band with an efficiency of 12.9%. In addition, the saturated gain is 16 dB, the small signal gain is 22 dB, the measured bandwidth is 2.1%, and the amplifier was zero

Portable musical instrument amplifier

DOEpatents

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

IC Ku-band Impatt Amplifier. [solid state spacecraft transmitter

NASA Technical Reports Server (NTRS)

Sokolov, V.; Namordi, M. R.; Doerbeck, F. H.; Wisseman, W. R.

1979-01-01

High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm.

Characteristics research on self-amplified distributed feedback fiber laser

NASA Astrophysics Data System (ADS)

Song, Zhiqiang; Qi, Haifeng; Guo, Jian; Wang, Chang; Peng, Gangding

2014-09-01

A distributed feedback (DFB) fiber laser with a ratio of the backward to forward output power of 1:100 was composed by a 45-mm-length asymmetrical phase-shifted fiber grating fabricated on the 50-mm erbium-doped photosensitive fiber. Forward output laser was amplified using a certain length of Nufern EDFL-980-Hp erbium-doped fiber to absorb the surplus pump power after the active phase-shifted fiber grating and get population inversion. By using OptiSystem software, the best fiber length of the EDFL to get the highest gain was simulated. In order to keep the amplified laser with the narrow line-width and low noise, a narrow-band light filter consisting of a fiber Bragg grating (FBG) with the same Bragg wavelength as the laser and an optical circulator was used to filter the amplified spontaneous emission (ASE) noise of the out-cavity erbium-doped fiber. The designed laser structure sufficiently utilized the pump power, and a DFB fiber laser with the 32.5-mW output power, 11.5-kHz line width, and -87-dB/Hz relative intensity noise (RIN) at 300 mW of 980 nm pump power was brought out.

Energy efficient low-noise neural recording amplifier with enhanced noise efficiency factor.

PubMed

Majidzadeh, V; Schmid, A; Leblebici, Y

2011-06-01

This paper presents a neural recording amplifier array suitable for large-scale integration with multielectrode arrays in very low-power microelectronic cortical implants. The proposed amplifier is one of the most energy-efficient structures reported to date, which theoretically achieves an effective noise efficiency factor (NEF) smaller than the limit that can be achieved by any existing amplifier topology, which utilizes a differential pair input stage. The proposed architecture, which is referred to as a partial operational transconductance amplifier sharing architecture, results in a significant reduction of power dissipation as well as silicon area, in addition to the very low NEF. The effect of mismatch on crosstalk between channels and the tradeoff between noise and crosstalk are theoretically analyzed. Moreover, a mathematical model of the nonlinearity of the amplifier is derived, and its accuracy is confirmed by simulations and measurements. For an array of four neural amplifiers, measurement results show a midband gain of 39.4 dB and a -3-dB bandwidth ranging from 10 Hz to 7.2 kHz. The input-referred noise integrated from 10 Hz to 100 kHz is measured at 3.5 μVrms and the power consumption is 7.92 μW from a 1.8-V supply, which corresponds to NEF = 3.35. The worst-case crosstalk and common-mode rejection ratio within the desired bandwidth are - 43.5 dB and 70.1 dB, respectively, and the active silicon area of each amplifier is 256 μm × 256 μm in 0.18-μm complementary metal-oxide semiconductor technology.

High efficiency RF amplifier development over wide dynamic range for accelerator application

NASA Astrophysics Data System (ADS)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Simple and efficient L-band erbium-doped fiber amplifiers for WDM networks

NASA Astrophysics Data System (ADS)

Choi, H. B.; Oh, J. M.; Lee, D.; Ahn, S. J.; Park, B. S.; Lee, S. B.

2002-11-01

The performance of L-band erbium-doped fiber amplifier (EDFA) of a simple structure with a fiber Bragg grating (FBG) was investigated. The injected C-band ASE by the FBG offers low-cost amplification and greatly improves the efficiency of the EDFA. There are 9 and 4 dB improvements with the FBG at 1587 nm, at low and high input, respectively. The flat gain of 18 dB, up to a total input of -5 dBm at 150 mW of 980 nm pump, is obtained over 30 nm with less than ±0.5 dB gain variations without any gain equalizer. The proposed EDFA provides a cost-effective solution for wavelength division multiplexing systems.

Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

2016-02-01

An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

NASA Astrophysics Data System (ADS)

Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.

2016-02-01

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

A two-stage monolithic buffer amplifier for 20 GHz satellite communication

NASA Technical Reports Server (NTRS)

Petersen, W. C.; Gupta, A. K.

1983-01-01

Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.

Variability Analysis of MOS Differential Amplifier

NASA Astrophysics Data System (ADS)

Aoki, Masakazu; Seto, Kenji; Yamawaki, Taizo; Tanaka, Satoshi

Variation characteristics in MOS differential amplifier are evaluated by using the concise statistical model parameters for SPICE simulation. We find that the variation in the differential-mode gain, Adm, induced by the current factor variation, Δβ0, in the Id-variation of the differential MOS transistors is more than one order of magnitude larger than that induced by the threshold voltage variation, ΔVth, which has been regarded as a major factor for circuit variations in SoC's (2). The results obtained by the Monte Carlo simulations are verified by the theoretical analysis combined with the sensitivity analysis which clarifies the specific device parameter dependences of the variation in Adm.

Cascadable all-optical inverter based on a nonlinear vertical-cavity semiconductor optical amplifier.

PubMed

Zhang, Haijiang; Wen, Pengyue; Esener, Sadik

2007-07-01

We report, for the first time to our knowledge, the operation of a cascadable, low-optical-switching-power(~10 microW) small-area (~100 microm(2)) high-speed (80 ps fall time) all-optical inverter. This inverter employs cross-gain modulation, polarization gain anisotropy, and highly nonlinear gain characteristics of an electrically pumped vertical-cavity semiconductor optical amplifier (VCSOA). The measured transfer characteristics of such an optical inverter resemble those of standard electronic metal-oxide semiconductor field-effect transistor-based inverters exhibiting high noise margin and high extinction ratio (~9.3 dB), making VCSOAs an ideal building block for all-optical logic and memory.

Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

NASA Astrophysics Data System (ADS)

Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

2017-01-01

WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

All-Glass Fiber Amplifier Pumped by Ultra-High Brightness Pumps

DTIC Science & Technology

2016-02-15

coated triple-clad fibers, we are developing triple-clad Yb fiber with gold coating for improved thermal management. 2.1 Pump laser The two...amplifier results using gain fiber with metalized fiber coating . Keywords: Fiber laser , specialty fiber, pump laser , beam combining, fiber metal coating ... coating can exceed its long-term damage threshold. Such a concern obviously does not apply to a fiber with gold protective coating [14]. Thus in

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Multiscale three-dimensional simulations of charge gain and transport in diamond

NASA Astrophysics Data System (ADS)

Dimitrov, D. A.; Busby, R.; Cary, J. R.; Ben-Zvi, I.; Rao, T.; Smedley, J.; Chang, X.; Keister, J. W.; Wu, Q.; Muller, E.

2010-10-01

A promising new concept of a diamond-amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. Detailed understanding of physical processes with multiple energy and time scales is required to design reliable and efficient diamond-amplifier cathodes. We have implemented models, within the VORPAL computational framework, to simulate secondary electron generation and charge transport in diamond in order to facilitate the investigation of the relevant effects involved. The models include inelastic scattering of electrons and holes for generation of electron-hole pairs, elastic, phonon, and charge impurity scattering. We describe the integrated modeling capabilities we developed and present results on charge gain and collection efficiency as a function of primary electron energy and applied electric field. We compare simulation results with available experimental data. The simulations show an overall qualitative agreement with the observed charge gain from transmission mode experiments and have enabled better understanding of the collection efficiency measurements.

Gain media edge treatment to suppress amplified spontaneous emission in a high power laser

DOEpatents

Hackel, Lloyd A [Livermore, CA; Soules, Thomas F [Livermore, CA; Fochs, Scott N [Livermore, CA; Rotter, Mark D [San Ramon, CA; Letts, Stephan A [San Ramon, CA

2011-02-22

A novel method and apparatus for suppressing ASE and/or parasitic oscillation modes in a laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges to a predetermined electromagnetic absorbing material arranged adjacent to the entire outer surface of the peripheral edges of the roughened laser gain media, ASE, parasitic oscillation modes and/or residual pump energy can be effectively suppressed.

Laser linewidth dependence to the transverse mode instability (TMI) nonlinear gain in kW-class fiber amplifiers

NASA Astrophysics Data System (ADS)

Mermelstein, Marc D.

2018-02-01

The thermal grating (TG) and inversion grating (IG) TMI gain dependence on the light beating intensity spectrum is investigated. TMI gain is restricted to intensity bandwidths comparable to the thermal gain bandwidth of 20 kHz. Seed laser phase noise generates intensity spectra determined by the laser linewidth and the relative group delay time of the gain fiber. These spectral bandwidths exceed the thermal gain bandwidth by orders of magnitude in both the coherent and incoherent regimes, making them unlikely sources of TMI. It is suggested that phase noise generated in the gain fiber due to external perturbations may be the source of the TMI.

Effects of perturbation relative phase on transverse mode instability gain

NASA Astrophysics Data System (ADS)

Zervas, Michalis N.

2018-02-01

We have shown that the relative phase between the fundamental fiber mode and the transverse perturbation affects significantly the local transverse modal instability (TMI) gain. The gain variation is more pronounced as the core diameter increases. This finding can be used in conjunction with other proposed approaches to develop efficient strategies for mitigating TMI in high power fiber amplifiers and lasers. It also provides some physical insight on the physical origin of the observed large differences in the TMI threshold dependence on core diameter for narrow and broad linewidth operation.

Beam quality management by periodic reproduction of wavefront aberrations in end-pumped Nd:YVO₄ laser amplifiers.

PubMed

Liu, Bin; Liu, Chong; Shen, Lifeng; Wang, Chunhua; Ye, Zhibin; Liu, Dong; Xiang, Zhen

2016-04-18

A method for beam quality management is presented in a master oscillator power amplifier (MOPA) using Nd:YVO₄ as the gain medium by extra-cavity periodic reproduction of wavefront aberrations. The wavefront aberration evolution of the intra-cavity beams is investigated for both symmetrical and asymmetrical resonators. The wavefront aberration reproduction process is successfully realized outside the cavity in four-stage amplifiers. In the MOPA with a symmetrical oscillator, the laser power increases linearly and the beam quality hardly changes. In the MOPA with an asymmetrical oscillator, the beam quality is deteriorated after the odd-stage amplifier and is improved after the even-stage amplifier. The wavefront aberration reproduction during the extra-cavity beam propagation in the amplifiers is equivalent to that during the intra-cavity propagation. This solution helps to achieve the effective beam quality management in laser amplifier chains.

INTEGRATED AND FIBER OPTICS: Anomalous reflection of light from the surface of an amplifying corrugated waveguide

NASA Astrophysics Data System (ADS)

Avrutskiĭ, I. A.; Sychugov, V. A.

1989-02-01

The problem of reflection of light from the surface of an amplifying corrugated waveguide is solved. An increase in the waveguide gain increases considerably the reflection coefficient and reduces the spectral width of the reflection peak.

Light-controlled resistors provide quadrature signal rejection for high-gain servo systems

NASA Technical Reports Server (NTRS)

Mc Cauley, D. D.

1967-01-01

Servo amplifier feedback system, in which the phase sensitive detection, low pass filtering, and multiplication functions required for quadrature rejection, are preformed by light-controlled photoresistors, eliminates complex circuitry. System increases gain, improves signal-to-noise ratio, and eliminates the necessity for compensation.

Operational Amplifiers.

ERIC Educational Resources Information Center

Foxcroft, G. E.

1986-01-01

Addresses the introduction of low cost equipment into high school and college physical science classes. Examines the properties of an "ideal" operational amplifier and discusses how it might be used under saturated and non-saturated conditions. Notes the action of a "real" operational amplifier. (TW)

Cascaded-cladding-pumped cascaded Raman fiber amplifier.

PubMed

Jiang, Huawei; Zhang, Lei; Feng, Yan

2015-06-01

The conversion efficiency of double-clad Raman fiber laser is limited by the cladding-to-core area ratio. To get high conversion efficiency, the inner-cladding-to-core area ratio has to be less than about 8, which limits the brightness enhancement. To overcome the problem, a cascaded-cladding-pumped cascaded Raman fiber laser with multiple-clad fiber as the Raman gain medium is proposed. A theoretical model of Raman fiber amplifier with multiple-clad fiber is developed, and numerical simulation proves that the proposed scheme can improve the conversion efficiency and brightness enhancement of cladding pumped Raman fiber laser.

Design and simulation of a gyroklystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, M. S., E-mail: mschauhan.rs.ece@iitbhu.ac.in; Swati, M. V.; Jain, P. K.

2015-03-15

In the present paper, a design methodology of the gyroklystron amplifier has been described and subsequently used for the design of a typically selected 200 kW, Ka-band, four-cavity gyroklystron amplifier. This conceptual device design has been validated through the 3D particle-in-cell (PIC) simulation and nonlinear analysis. Commercially available PIC simulation code “MAGIC” has been used for the electromagnetic study at the different location of the device RF interaction structure for the beam-absent case, i.e., eigenmode study as well as for the electron beam and RF wave interaction behaviour study in the beam present case of the gyroklystron. In addition, a practicalmore » problem of misalignment of the RF cavities with drift tubes within the tube has been also investigated and its effect on device performance studied. The analytical and simulation results confirmed the validity of the gyroklystron device design. The PIC simulation results of the present gyroklystron produced a stable RF output power of ∼218 kW for 0% velocity spread at 35 GHz, with ∼45 dB gain, 37% efficiency, and a bandwidth of 0.3% for a 70 kV, 8.2 A gyrating electron beam. The simulated values of RF output power have been found in agreement with the nonlinear analysis results within ∼5%. Further, the PIC simulation has been extended to study a practical problem of misalignment of the cavities axis and drift tube axis of the gyroklystron amplifier and found that the RF output power is more sensitive to misalignments in comparison to the device bandwidth. The present paper, gyroklystron device design, nonlinear analysis, and 3D PIC simulation using commercially available code had been systematically described would be of use to the high-power gyro-amplifier tube designers and research scientists.« less

Gain media edge treatment to suppress amplified spontaneous emission in a high power laser

DOEpatents

Hackel, Lloyd A.; Soules, Thomas F.; Fochs, Scott N.; Rotter, Mark D.; Letts, Stephan A.

2008-12-09

A novel method and apparatus for suppressing ASE and parasitic oscillation modes in a high average power laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges using a substantially high index bonding elastomer or epoxy to a predetermined electromagnetic absorbing arranged adjacent to the entire outer surface of the peripheral edges of the roughened laser gain media, ASE and parasitic oscillation modes can be effectively suppressed.

Maximizing power output from continuous-wave single-frequency fiber amplifiers.

PubMed

Ward, Benjamin G

2015-02-15

This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

Broadband spectral shaping in regenerative amplifier based on modified polarization-encoded chirped pulse amplification

NASA Astrophysics Data System (ADS)

Wang, Xinliang; Lu, Xiaoming; Liu, Yanqi; Xu, Yi; Wang, Cheng; Li, Shuai; Yu, Linpeng; Liu, Xingyan; Liu, Keyang; Xu, Rongjie; Leng, Yuxin

2018-06-01

We present an intra-cavity spectral shaping method to suppress the spectral narrowing in a Ti:sapphire (Ti:Sa) regenerative amplifier. The spectral shaping is realized by manipulating the stored energies of two Ti:Sa crystals with orthogonal c-axes, changing the length of a quartz plate, and rotating a broadband achromatic half-wave plate. Using this method, in our proof-of-concept experiment, an 84-nm-(FWHM)-broadband amplified pulse with an energy gain larger than 106 is obtained, which supports a 17.8 fs Fourier-transform-limited pulse duration. The pulse is compressed to 18.9 fs.

Two-stage optical parametric chirped-pulse amplifier using sub-nanosecond pump pulse generated by stimulated Brillouin scattering compression

NASA Astrophysics Data System (ADS)

Ogino, Jumpei; Miyamoto, Sho; Matsuyama, Takahiro; Sueda, Keiichi; Yoshida, Hidetsugu; Tsubakimoto, Koji; Miyanaga, Noriaki

2014-12-01

We demonstrate optical parametric chirped-pulse amplification (OPCPA) based on two-beam pumping, using sub-nanosecond pulses generated by stimulated Brillouin scattering compression. Seed pulse energy, duration, and center wavelength were 5 nJ, 220 ps, and ˜1065 nm, respectively. The 532 nm pulse from a Q-switched Nd:YAG laser was compressed to ˜400 ps in heavy fluorocarbon FC-40 liquid. Stacking of two time-delayed pump pulses reduced the amplifier gain fluctuation. Using a walk-off-compensated two-stage OPCPA at a pump energy of 34 mJ, a total gain of 1.6 × 105 was obtained, yielding an output energy of 0.8 mJ. The amplified chirped pulse was compressed to 97 fs.

Characterization of a measurement-based noiseless linear amplifier and its applications

NASA Astrophysics Data System (ADS)

Zhao, Jie; Haw, Jing Yan; Symul, Thomas; Lam, Ping Koy; Assad, Syed M.

2017-07-01

A noiseless linear amplifier (NLA) adds no noise to the signals it processes, which works only in a probabilistic way. It can be realized approximately with either a physical implementation that truncates the working space of the NLA on a photon-number basis or a measurement-based implementation that realizes the truncation virtually by a bounded postselection filter. To examine the relationship between these two approximate NLAs, we characterize in detail the measurement-based NLA and compare it with its physical counterpart in terms of their abilities to preserve the state Gaussianity and their probability of success. The link between these amplifiers is further clarified by integrating them into a measure-and-prepare setup. We stress the equivalence between the physical and the measurement-based approaches holds only when the effective parameters, the amplification gain, the cutoff, and the amplitude of the input state, are taken into account. Finally, we construct a 1-to-infinity cloner using the two amplifiers and show that a fidelity surpassing the no-cloning limit is achievable with the measurement-based NLA.

Design and implementation of a wireless (Bluetooth) four channel bio-instrumentation amplifier and digital data acquisition device with user-selectable gain, frequency, and driven reference.

PubMed

Cosmanescu, Alin; Miller, Benjamin; Magno, Terence; Ahmed, Assad; Kremenic, Ian

2006-01-01

A portable, multi-purpose Bio-instrumentation Amplifier and Data AcQuisition device (BADAQ) capable of measuring and transmitting EMG and EKG signals wirelessly via Bluetooth is designed and implemented. Common topologies for instrumentation amplifiers and filters are used and realized with commercially available, low-voltage, high precision operational amplifiers. An 8-bit PIC microcontroller performs 10-bit analog-to-digital conversion of the amplified and filtered signals and controls a Bluetooth transceiver capable of wirelessly transmitting the data to any Bluetooth enabled device. Electrical isolation between patient/subject, circuitry, and ancillary equipment is achieved by optocoupling components. The design focuses on simplicity, portability, and affordability.

Reconfigurable optomechanical circulator and directional amplifier.

PubMed

Shen, Zhen; Zhang, Yan-Lei; Chen, Yuan; Sun, Fang-Wen; Zou, Xu-Bo; Guo, Guang-Can; Zou, Chang-Ling; Dong, Chun-Hua

2018-05-04

Non-reciprocal devices, which allow non-reciprocal signal routing, serve as fundamental elements in photonic and microwave circuits and are crucial in both classical and quantum information processing. The radiation-pressure-induced coupling between light and mechanical motion in travelling-wave resonators has been exploited to break the Lorentz reciprocity, enabling non-reciprocal devices without magnetic materials. Here, we experimentally demonstrate a reconfigurable non-reciprocal device with alternative functions as either a circulator or a directional amplifier via optomechanically induced coherent photon-phonon conversion or gain. The demonstrated device exhibits considerable flexibility and offers exciting opportunities for combining reconfigurability, non-reciprocity and active properties in single photonic devices, which can also be generalized to microwave and acoustic circuits.

Optimal Design of a Traveling-Wave Kinetic Inductance Amplifier Operated in Three-Wave Mixing Mode

NASA Astrophysics Data System (ADS)

Erickson, Robert; Bal, Mustafa; Ku, Ksiang-Sheng; Wu, Xian; Pappas, David

In the presence of a DC bias, an injected pump, of frequency fP, and a signal, of frequency fS, undergo parametric three-way mixing (3WM) within a traveling-wave kinetic inductance (KIT) amplifier, producing an idler product of frequency fI =fP -fS . Periodic frequency stops are engineered into the coplanar waveguide of the device to enhance signal amplification. With fP placed just above the first frequency stop gap, 3WM broadband signal gain is achieved with maximum gain at fS =fP / 2 . Within a theory of the dispersion of traveling waves in the presence of these engineered loadings, which accounts for this broadband signal gain, we show how an optimal frequency-stop design may be constructed to achieve maximum signal amplification. The optimization approach we describe can be applied to the design of other nonlinear traveling-wave parametric amplifiers. This work was supported by the Army Research Office and the Laboratory for Physical Sciences under EAO221146, EAO241777, and the NIST Quantum Initiative. RPE acknowledges Grant 60NANB14D024 from the US Department of Commerce, NIST.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

PubMed

Lockerbie, N A; Tokmakov, K V

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

NASA Astrophysics Data System (ADS)

Lockerbie, N. A.; Tokmakov, K. V.

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

Recent progress of erbium-doped fiber amplifiers and their components

NASA Astrophysics Data System (ADS)

Fukushima, Masaru; Miura, Jutaro

2007-09-01

The Erbium-doped fiber amplifiers (EDFA) are widely available in a today's commercial market, and are deployed in various optical transmission applications from terrestrial system to undersea system. Broad gain spectrum over 9 THz enabled huge growth of bandwidth usage in 1550nm region aimed at broadband Internet, and its broad gain characteristics triggered bandwidth competition on dense wavelength division multiplex (DWDM) network these ten years. At first, we briefly review the evolutional history of EDFA with previous achievements. And we will explain the primary and important key devices which compose EDFA. We will discuss design parameters, and recent trend and achievements of the devices, which cover Erbium-doped fibers (EDF), 980-nm laser diodes (LD), and gain flattening filters (GFFs). The chip structure of 980-nm LD is explained to achieve high power and to realize high reliability. These key devices enabled EDFA to prevail in commercial area. After the discussion of key components, we will introduce recent achievements of gain controlled EDFAs which are applied in conjunction with Re-configurable Optical Add/Drop Multiplexer (ROADM). We will report the transient gain dynamics of the cascaded EDFAs with a recirculating loop experiment.