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Sample records for gallium 65 target

  1. Production scale purification of Ge-68 and Zn-65 from irradiated gallium metal.

    PubMed

    Fitzsimmons, Jonathan M; Mausner, Leonard

    2015-07-01

    Germanium-68 (Ge-68) is produced by proton irradiation of a gallium metal target, purified by organic extraction and used in a medical isotope generator to produce Gallium-68 PET imaging agents. The purpose of this work was to implement a production scale separation of Ge-68 and Zn-65 that does not use organic solvents and uses a limited number of columns. The current separation approach was modified to use AG1 resin and/or Sephadex(©) G25 with zinc spikes to purify Ge-68 with near quantitative recovery. The purified Ge-68 meets DOE specifications. Methods utilizing zinc spikes resulted in the purist Ge-68 produced at Brookhaven National Lab with no other impurities by ICP-OES. During process optimization approximately 2.5 Ci of Ge-68 was purified utilizing the different processing methods, and the material was sold to the Nuclear Medicine community between 2012-2013.

  2. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  3. Gallium-based anti-infectives: targeting microbial iron-uptake mechanisms.

    PubMed

    Kelson, Andrew B; Carnevali, Maia; Truong-Le, Vu

    2013-10-01

    Microbes have evolved elaborate iron-acquisition systems to sequester iron from the host environment using siderophores and heme uptake systems. Gallium(III) is structurally similar to iron(III), except that it cannot be reduced under physiological conditions, therefore gallium has the potential to serve as an iron analog, and thus an anti-microbial. Because Ga(III) can bind to virtually any complex that binds Fe(III), simple gallium salts as well as more complex siderophores and hemes are potential carriers to deliver Ga(III) to the microbes. These gallium complexes represent a new class of anti-infectives that is different in mechanism of action from conventional antibiotics. Simple gallium salts such as gallium nitrate, maltolate, and simple gallium siderophore complexes such as gallium citrate have shown good antibacterial activities. The most studied complex has been gallium citrate, which exhibits broad activity against many Gram negative bacteria at ∼1-5μg/ml MICs, strong biofilm activity, low drug resistance, and efficacy in vivo. Using the structural features of specific siderophore and heme made by pathogenic bacteria and fungi, researchers have begun to evaluate new gallium complexes to target key pathogens. This review will summarize potential iron-acquisition system targets and recent research on gallium-based anti-infectives.

  4. Gallium arsenide differentially affects processing of phagolysosomal targeted antigen by macrophages.

    PubMed

    Lewis, T A; Hartmann, C B; McCoy, K L

    1998-03-01

    Gallium arsenide, a semiconductor utilized in the electronics industry, causes immunosuppression in animals. The chemical's effect on macrophages to process antigen for activating pigeon cytochrome-specific helper T cell hybridoma was investigated. Mice were administered 200 mg/kg gallium arsenide or vehicle intraperitoneally. Five-day exposure suppressed processing by splenic macrophages but augmented processing by thioglycollate-elicited and resident peritoneal macrophages. Cytochrome coupled to latex beads was targeted to phagolysosomes to examine processing in lysosomes. Cytochrome beads required phagocytosis for processing and were located in phagolysosomes. Gallium arsenide did not alter the phagocytic ability of macrophages. Peritoneal macrophages normally processed the targeted antigen, indicating that gallium arsenide influenced compartment(s) preceding lysosomes. However, the processing efficiency of exposed splenic macrophages depended on the size of particulate cytochrome, suggesting that processing varied in phagolysosomes of different sizes. Gallium arsenide impacted different intracellular compartments in these macrophages, perhaps contributing to systemic immunotoxicity and local inflammation caused by exposure.

  5. Targeted Delivery of Glucan Particle Encapsulated Gallium Nanoparticles Inhibits HIV Growth in Human Macrophages

    PubMed Central

    Soto, Ernesto R.; O'Connell, Olivia; Dikengil, Fusun; Peters, Paul J.; Clapham, Paul R.

    2016-01-01

    Glucan particles (GPs) are hollow, porous 3–5 μm microspheres derived from the cell walls of Baker's yeast (Saccharomyces cerevisiae). The 1,3-β-glucan outer shell provides for receptor-mediated uptake by phagocytic cells expressing β-glucan receptors. GPs have been used for macrophage-targeted delivery of a wide range of payloads (DNA, siRNA, protein, small molecules, and nanoparticles) encapsulated inside the hollow GPs or bound to the surface of chemically derivatized GPs. Gallium nanoparticles have been proposed as an inhibitory agent against HIV infection. Here, macrophage targeting of gallium using GPs provides for more efficient delivery of gallium and inhibition of HIV infection in macrophages compared to free gallium nanoparticles. PMID:27965897

  6. Iron-Targeting Antitumor Activity of Gallium Compounds and Novel Insights Into Triapine®-Metal Complexes

    PubMed Central

    Antholine, William E.

    2013-01-01

    Abstract Significance: Despite advances made in the treatment of cancer, a significant number of patients succumb to this disease every year. Hence, there is a great need to develop new anticancer agents. Recent Advances: Emerging data show that malignant cells have a greater requirement for iron than normal cells do and that proteins involved in iron import, export, and storage may be altered in cancer cells. Therefore, strategies to perturb these iron-dependent steps in malignant cells hold promise for the treatment of cancer. Recent studies show that gallium compounds and metal-thiosemicarbazone complexes inhibit tumor cell growth by targeting iron homeostasis, including iron-dependent ribonucleotide reductase. Chemical similarities of gallium(III) with iron(III) enable the former to mimic the latter and interpose itself in critical iron-dependent steps in cellular proliferation. Newer gallium compounds have emerged with additional mechanisms of action. In clinical trials, the first-generation-compound gallium nitrate has exhibited activity against bladder cancer and non-Hodgkin's lymphoma, while the thiosemicarbazone Triapine® has demonstrated activity against other tumors. Critical Issues: Novel gallium compounds with greater cytotoxicity and a broader spectrum of antineoplastic activity than gallium nitrate should continue to be developed. Future Directions: The antineoplastic activity and toxicity of the existing novel gallium compounds and thiosemicarbazone-metal complexes should be tested in animal tumor models and advanced to Phase I and II clinical trials. Future research should identify biologic markers that predict tumor sensitivity to gallium compounds. This will help direct gallium-based therapy to cancer patients who are most likely to benefit from it. Antioxid. Redox Signal. 00, 000–000. PMID:22900955

  7. Investigating the photosensitizer-potential of targeted gallium corrole using multimode optical imaging

    NASA Astrophysics Data System (ADS)

    Hwang, Jae Youn; Lubow, Jay; Chu, David; Gross, Zeev; Gray, Harry B.; Farkas, Daniel L.; Medina-Kauwe, Lali K.

    2011-02-01

    We recently developed a novel therapeutic particle, HerGa, for breast cancer treatment and detection. HerGa consists of a tumor-targeted cell penetration protein noncovalently assembled with a gallium-metallated corrole. The corrole is structurally similar to porphyrin, emits intense fluorescence, and has proven highly effective for breast tumor treatment preclinically, without light exposure. Here, we tested HerGa as a photosensitizer for photodynamic therapy and investigated its mechanism of action using multimode optical imaging. Using confocal fluorescence imaging, we observed that HerGa disrupts the mitochondrial membrane potential in situ, and this disruption is substantially augmented by light exposure. In addition, spectral and fluorescence lifetime imaging were utilized to both validate the mitochondrial membrane potential disruption and investigate HerGa internalization, allowing us to optimize the timing for light dosimetry. We observed, using advanced multimode optical imaging, that light at a specific wavelength promotes HerGa cytotoxicity, which is likely to cause disruption of mitochondrial function. Thus, we can identify for the first time the capacity of HerGa as a photosensitizer for photodynamic therapy and reveal its mechanism of action, opening possibilities for therapeutic intervention in human breast cancer management.

  8. Gallium-Protoporphyrin IX Inhibits Pseudomonas aeruginosa Growth by Targeting Cytochromes

    PubMed Central

    Hijazi, Sarah; Visca, Paolo; Frangipani, Emanuela

    2017-01-01

    Pseudomonas aeruginosa is a challenging pathogen due to both innate and acquired resistance to antibiotics. It is capable of causing a variety of infections, including chronic lung infection in cystic fibrosis (CF) patients. Given the importance of iron in bacterial physiology and pathogenicity, iron-uptake and metabolism have become attractive targets for the development of new antibacterial compounds. P. aeruginosa can acquire iron from a variety of sources to fulfill its nutritional requirements both in the environment and in the infected host. The adaptation of P. aeruginosa to heme iron acquisition in the CF lung makes heme utilization pathways a promising target for the development of new anti-Pseudomonas drugs. Gallium [Ga(III)] is an iron mimetic metal which inhibits P. aeruginosa growth by interfering with iron-dependent metabolism. The Ga(III) complex of the heme precursor protoporphyrin IX (GaPPIX) showed enhanced antibacterial activity against several bacterial species, although no inhibitory effect has been reported on P. aeruginosa. Here, we demonstrate that GaPPIX is indeed capable of inhibiting the growth of clinical P. aeruginosa strains under iron-deplete conditions, as those encountered by bacteria during infection, and that GaPPIX inhibition is reversed by iron. Using P. aeruginosa PAO1 as model organism, we show that GaPPIX enters cells through both the heme-uptake systems has and phu, primarily via the PhuR receptor which plays a crucial role in P. aeruginosa adaptation to the CF lung. We also demonstrate that intracellular GaPPIX inhibits the aerobic growth of P. aeruginosa by targeting cytochromes, thus interfering with cellular respiration. PMID:28184354

  9. Gallium-Protoporphyrin IX Inhibits Pseudomonas aeruginosa Growth by Targeting Cytochromes.

    PubMed

    Hijazi, Sarah; Visca, Paolo; Frangipani, Emanuela

    2017-01-01

    Pseudomonas aeruginosa is a challenging pathogen due to both innate and acquired resistance to antibiotics. It is capable of causing a variety of infections, including chronic lung infection in cystic fibrosis (CF) patients. Given the importance of iron in bacterial physiology and pathogenicity, iron-uptake and metabolism have become attractive targets for the development of new antibacterial compounds. P. aeruginosa can acquire iron from a variety of sources to fulfill its nutritional requirements both in the environment and in the infected host. The adaptation of P. aeruginosa to heme iron acquisition in the CF lung makes heme utilization pathways a promising target for the development of new anti-Pseudomonas drugs. Gallium [Ga(III)] is an iron mimetic metal which inhibits P. aeruginosa growth by interfering with iron-dependent metabolism. The Ga(III) complex of the heme precursor protoporphyrin IX (GaPPIX) showed enhanced antibacterial activity against several bacterial species, although no inhibitory effect has been reported on P. aeruginosa. Here, we demonstrate that GaPPIX is indeed capable of inhibiting the growth of clinical P. aeruginosa strains under iron-deplete conditions, as those encountered by bacteria during infection, and that GaPPIX inhibition is reversed by iron. Using P. aeruginosa PAO1 as model organism, we show that GaPPIX enters cells through both the heme-uptake systems has and phu, primarily via the PhuR receptor which plays a crucial role in P. aeruginosa adaptation to the CF lung. We also demonstrate that intracellular GaPPIX inhibits the aerobic growth of P. aeruginosa by targeting cytochromes, thus interfering with cellular respiration.

  10. Gallium scan

    MedlinePlus

    ... material called gallium and is a type of nuclear medicine exam. A related test is gallium scan ... Brown ML, Forstrom LA, et al. Society of nuclear medicine procedure guideline for gallium scintigraphy in inflammation. ...

  11. Development of gallium compounds for treatment of lymphoma: gallium maltolate, a novel hydroxypyrone gallium compound, induces apoptosis and circumvents lymphoma cell resistance to gallium nitrate.

    PubMed

    Chitambar, Christopher R; Purpi, David P; Woodliff, Jeffrey; Yang, Meiying; Wereley, Janine P

    2007-09-01

    Clinical studies have shown gallium nitrate to have significant antitumor activity against non-Hodgkin's lymphoma and bladder cancer, thus indicating that gallium-based drugs have potential for further development as antineoplastic agents. In this study, we compared the cytotoxicity of gallium maltolate, a novel gallium compound, with gallium nitrate in lymphoma cell lines, including p53 variant and unique gallium nitrate-resistant cells. We found that gallium maltolate inhibited cell proliferation and induced apoptosis through the mitochondrial pathway at lower concentrations and more rapidly than gallium nitrate. Gallium maltolate produced an increase in intracellular reactive oxygen species (ROS) within 2 h of incubation with cells; this effect could be blocked by mitoquinone, a mitochondria-targeted antioxidant. The role of the transferrin receptor (TfR) in gallium maltolate's action was examined using monoclonal antibody (MoAb) 42/6 to block TfR function. However, although MoAb 42/6 reduced gallium maltolate-induced caspase-3 activity, it had only a minor effect on cell growth inhibition. Importantly, gallium maltolate induced apoptosis in cells resistant to gallium nitrate, and, unlike gallium nitrate, its cytotoxicity was not affected by cellular p53 status. Cellular gallium uptake was greater with gallium maltolate than with gallium nitrate. We conclude that gallium maltolate inhibits cell proliferation and induces apoptosis more efficiently than gallium nitrate. Gallium maltolate is incorporated into lymphoma cells to a greater extent than gallium nitrate via both TfR-independent and -dependent pathways; it has significant activity against gallium nitrate-resistant cells and acts independently of p53. Further studies to evaluate its antineoplastic activity in vivo are warranted.

  12. Evaluation of Gallium as a Tracer of Exogenous Hemoglobin-Haptoglobin Complexes for Targeted Drug Delivery Applications

    NASA Astrophysics Data System (ADS)

    Xu, Shengsheng; Kaltashov, Igor A.

    2016-12-01

    Haptoglobin (Hp) is a plasma glycoprotein that generates significant interest in the drug delivery community because of its potential for delivery of antiretroviral medicines with high selectivity to macrophages and monocytes, the latent reservoirs of human immunodeficiency virus. As is the case with other therapies that exploit transport networks for targeted drug delivery, the success of the design and optimization of Hp-based therapies will critically depend on the ability to accurately localize and quantitate Hp-drug conjugates on the varying and unpredictable background of endogenous proteins having identical structure. In this work, we introduce a new strategy for detecting and quantitating exogenous Hp and Hp-based drugs with high sensitivity in complex biological samples using gallium as a tracer of this protein and inductively coupled plasma mass spectrometry (ICP MS) as a method of detection. Metal label is introduced by reconstituting hemoglobin (Hb) with gallium(III)-protoporphyrin IX followed by its complexation with Hp. Formation of the Hp/Hb assembly and its stability are evaluated with native electrospray ionization mass spectrometry. Both stable isotopes of Ga give rise to an abundant signal in ICP MS of a human plasma sample spiked with the metal-labeled Hp/Hb complex. The metal label signal exceeds the spectral interferences' contributions by more than an order of magnitude even with the concentration of the exogenous protein below 10 nM, the level that is more than adequate for the planned pharmacokinetic studies of Hp-based therapeutics.

  13. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

    SciTech Connect

    Sun, J.; Wu, A.M.; Xu, N.; Ying, Z.F.; Shen, X.K.; Dong, Z.B.; Wu, J.D.; Shi, L.Q.

    2005-11-15

    Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38 eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed.

  14. ExploreNEOs. III. PHYSICAL CHARACTERIZATION OF 65 POTENTIAL SPACECRAFT TARGET ASTEROIDS

    SciTech Connect

    Mueller, Michael; Delbo', M.; Hora, J. L.; Fazio, G.; Smith, H. A.; Spahr, T. B.; Trilling, D. E.; Thomas, C. A.; Bhattacharya, B.; Chesley, S.; Mainzer, A.; Emery, J. P.; Harris, A. W.; Mommert, M.; Penprase, B.; Stansberry, J. A.

    2011-04-15

    Space missions to near-Earth objects (NEOs) are being planned at all major space agencies, and recently a manned mission to an NEO was announced as a NASA goal. Efforts to find and select suitable targets (plus backup targets) are severely hampered by our lack of knowledge of the physical properties of dynamically favorable NEOs. In particular, current mission scenarios tend to favor primitive low-albedo objects. For the vast majority of NEOs, the albedo is unknown. Here we report new constraints on the size and albedo of 65 NEOs with rendezvous {Delta}v <7 km s{sup -1}. Our results are based on thermal-IR flux data obtained in the framework of our ongoing (2009-2011) ExploreNEOs survey using NASA's 'Warm-Spitzer' space telescope. As of 2010 July 14, we have results for 293 objects in hand (including the 65 low-{Delta}v NEOs presented here); before the end of 2011, we expect to have measured the size and albedo of {approx}700 NEOs (including probably {approx}160 low-{Delta}v NEOs). While there are reasons to believe that primitive volatile-rich materials are universally low in albedo, the converse need not be true: the orbital evolution of some dark objects likely has caused them to lose their volatiles by coming too close to the Sun. For all our targets, we give the closest perihelion distance they are likely to have reached (using orbital integrations from Marchi et al. 2009) and corresponding upper limits on the past surface temperature. Low-{Delta}v objects for which both albedo and thermal history may suggest a primitive composition include (162998) 2001 SK162, (68372) 2001 PM9, and (100085) 1992 UY4.

  15. Stepwise phosphorylation of p65 promotes NF-κB activation and NK cell responses during target cell recognition

    PubMed Central

    Kwon, Hyung-Joon; Choi, Go-Eun; Ryu, Sangryeol; Kwon, Soon Jae; Kim, Sun Chang; Booth, Claire; Nichols, Kim E.; Kim, Hun Sik

    2016-01-01

    NF-κB is a key transcription factor that dictates the outcome of diverse immune responses. How NF-κB is regulated by multiple activating receptors that are engaged during natural killer (NK)-target cell contact remains undefined. Here we show that sole engagement of NKG2D, 2B4 or DNAM-1 is insufficient for NF-κB activation. Rather, cooperation between these receptors is required at the level of Vav1 for synergistic NF-κB activation. Vav1-dependent synergistic signalling requires a separate PI3K-Akt signal, primarily mediated by NKG2D or DNAM-1, for optimal p65 phosphorylation and NF-κB activation. Vav1 controls downstream p65 phosphorylation and NF-κB activation. Synergistic signalling is defective in X-linked lymphoproliferative disease (XLP1) NK cells entailing 2B4 dysfunction and required for p65 phosphorylation by PI3K-Akt signal, suggesting stepwise signalling checkpoint for NF-κB activation. Thus, our study provides a framework explaining how signals from different activating receptors are coordinated to determine specificity and magnitude of NF-κB activation and NK cell responses. PMID:27221592

  16. Gallium nitride optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  17. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  18. Hepatic MiR-291b-3p Mediated Glucose Metabolism by Directly Targeting p65 to Upregulate PTEN Expression

    PubMed Central

    Guo, Jun; Dou, Lin; Meng, Xiangyu; Chen, Zhenzhen; Yang, Weili; Fang, Weiwei; Yang, Chunxiao; Huang, Xiuqing; Tang, Weiqing; Yang, Jichun; Li, Jian

    2017-01-01

    Several studies have suggested an important role of miR-291b-3p in the development of embryonic stem cells. In previous study, we found that the expression of miR-291b-3p was significantly upregulated in the liver of db/db mice. However, the role of miR-291b-3p in glucose metabolism and its underlying mechanisms remain unknown. In the present study, we demonstrated that miR-291b-3p was abundantly expressed in the liver. Of note, hepatic miR-291b-3p expression was upregulated in HFD-fed mice and induced by fasting in C57BL/6 J normal mice. Importantly, hepatic inhibition miR-291b-3p expression ameliorated hyperglycemia and insulin resistance in HFD-fed mice, whereas hepatic overexpression of miR-291b-3p led to hyperglycemia and insulin resistance in C57BL/6 J normal mice. Further study revealed that miR-291b-3p suppressed insulin-stimulated AKT/GSK signaling and increased the expression of gluconeogenic genes in hepatocytes. Moreover, we identified that p65, a subunit of nuclear factor-κB (NF-κB), is a target of miR-291b-3p by bioinformatics analysis and luciferase reporter assay. Silencing of p65 significantly augmented the expression of PTEN and impaired AKT activation. In conclusion, we found novel evidence suggesting that hepatic miR-291b-3p mediated glycogen synthesis and gluconeogenesis through targeting p65 to regulate PTEN expression. Our findings indicate the therapeutic potential of miR-291b-3p inhibitor in hyperglycemia and insulin resistance. PMID:28054586

  19. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  20. RelA/p65 is a molecular target for the immunosuppressive action of protein kinase A.

    PubMed Central

    Neumann, M; Grieshammer, T; Chuvpilo, S; Kneitz, B; Lohoff, M; Schimpl, A; Franza, B R; Serfling, E

    1995-01-01

    Stimulation of the protein kinase A (PKA) signalling pathway exerts an inhibitory effect on the proliferation of numerous cells, including T lymphocytes. In CD4+ T helper cells, stimulation of PKA leads to suppression of interleukin 2 (IL-2) induction, while induction of the genes coding for the lymphokines IL-4 and IL-5 is enhanced. We show that the differential effect of PKA activity on induction of the IL-2 and IL-4 genes is mediated through their promoters. One major target of the suppressive effect of PKA is the kappa B site in the IL-2 promoter. A kappa B site is missing in the IL-4 promoter. Mutations preventing factor binding to the IL-2 kappa B site result in a loss of PKA-mediated suppression of IL-2 promoter activity. Furthermore, activation of the PKA signalling pathway impairs the inducible activity of multiple kappa B sites of the IL-2 promoter, but not of other factor binding sites. The reduction in activity of kappa B sites in activated and PKA-stimulated T cells is accompanied by changes in the concentration and DNA binding of Rel/NF-kappa B factors. Stimulation of the PKA pathway in Jurkat T cells with the PKA activator forskolin leads to an increase in synthesis of c-Rel and p105/p50, while synthesis of p65/RelA remains unchanged. However, nuclear translocation and DNA binding of p65 is distinctly impaired, probably due to a retarded degradation of I kappa B-alpha. In a similar way, stimulation of the PKA signalling pathway inhibits nuclear translocation of p65 and generation of nuclear kappa B complexes in peripheral T lymphocytes from murine lymph nodes. These results indicate that PKA-mediated suppression of NF-kappa B activity plays an important role in the control of activation of peripheral T lymphocytes. Images PMID:7744006

  1. Poxvirus Protein MC132 from Molluscum Contagiosum Virus Inhibits NF-κB Activation by Targeting p65 for Degradation

    PubMed Central

    Haas, Darya A.; Farrell, Paul J.; Pichlmair, Andreas

    2015-01-01

    ABSTRACT Molluscum contagiosum virus (MCV) is unique in being the only known extant, human-adapted poxvirus, yet to date, it is very poorly characterized in terms of host-pathogen interactions. MCV causes persistent skin lesions filled with live virus, but these are generally immunologically silent, suggesting the presence of potent inhibitors of human antiviral immunity and inflammation. Fewer than five MCV immunomodulatory genes have been characterized in detail, but it is likely that many more remain to be discovered given the density of such sequences in all well-characterized poxviruses. Following virus infection, NF-κB activation occurs in response to both pattern recognition receptor (PRR) signaling and cellular activation by virus-elicited proinflammatory cytokines, such as tumor necrosis factor (TNF). As such, NF-κB activation is required for virus detection, antiviral signaling, inflammation, and clearance of viral infection. Hence, we screened a library of MCV genes for effects on TNF-stimulated NF-κB activation. This revealed MC132, a unique protein with no orthologs in other poxviral genomes, as a novel inhibitor of NF-κB. Interestingly, MC132 also inhibited PRR- and virus-activated NF-κB, since MC132 interacted with the NF-κB subunit p65 and caused p65 degradation. Unbiased affinity purification to identify host targets of MC132 revealed that MC132 acted by targeting NF-κB p65 for ubiquitin-dependent proteasomal degradation by recruiting p65 to a host Cullin-5/Elongin B/Elongin C complex. These data reveal a novel mechanism for poxviral inhibition of human innate immunity and further clarify how the human-adapted poxvirus MCV can so effectively evade antiviral immunity to persist in skin lesions. IMPORTANCE How human cells detect and respond to viruses is incompletely understood, but great leaps in our understanding have been made by studying both the early innate immune response and the ways that viruses evade it. Poxviruses adapt to specific

  2. Repurposing of gallium-based drugs for antibacterial therapy.

    PubMed

    Bonchi, Carlo; Imperi, Francesco; Minandri, Fabrizia; Visca, Paolo; Frangipani, Emanuela

    2014-01-01

    While the occurrence and spread of antibiotic resistance in bacterial pathogens is vanishing current anti-infective therapies, the antibiotic discovery pipeline is drying up. In the last years, the repurposing of existing drugs for new clinical applications has become a major research area in drug discovery, also in the field of anti-infectives. This review discusses the potential of repurposing previously approved gallium formulations in antibacterial chemotherapy. Gallium has no proven function in biological systems, but it can act as an iron-mimetic in both prokaryotic and eukaryotic cells. The activity of gallium mostly relies on its ability to replace iron in redox enzymes, thus impairing their function and ultimately hampering cell growth. Cancer cells and bacteria are preferential gallium targets due to their active metabolism and fast growth. The wealth of knowledge on the pharmacological properties of gallium has opened the door to the repurposing of gallium-based drugs for the treatment of infections sustained by antibiotic-resistant bacterial pathogens, such as Acinetobacter baumannii or Pseudomonas aeruginosa, and for suppression of Mycobacterium tuberculosis growth. The promising antibacterial activity of gallium both in vitro and in different animal models of infection raises the hope that gallium will confirm its efficacy in clinical trials, and will become a valuable therapeutic option to cure otherwise untreatable bacterial infections.

  3. Preventing Supercooling Of Gallium

    NASA Technical Reports Server (NTRS)

    Massucco, Arthur A.; Wenghoefer, Hans M.; Wilkins, Ronnie

    1994-01-01

    Principle of heterogeneous nucleation exploited to prevent gallium from supercooling, enabling its use as heat-storage material that crystallizes reproducibly at its freezing or melting temperature of 29 to 30 degrees C. In original intended application, gallium used as heat-storage material in gloves of space suits. Terrestrial application lies in preparation of freezing-temperature reference samples for laboratories. Principle of heterogeneous nucleation also exploited similarly in heat pipes filled with sodium.

  4. Electrodeposition of gallium for photovoltaics

    SciTech Connect

    Bhattacharya, Raghu N.

    2016-08-09

    An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

  5. Clinical applications of Gallium-68.

    PubMed

    Banerjee, Sangeeta Ray; Pomper, Martin G

    2013-06-01

    Gallium-68 is a positron-emitting radioisotope that is produced from a (68)Ge/(68)Ga generator. As such it is conveniently used, decoupling radiopharmacies from the need for a cyclotron on site. Gallium-68-labeled peptides have been recognized as a new class of radiopharmaceuticals showing fast target localization and blood clearance. (68)Ga-DOTATOC, (8)Ga-DOTATATE, (68)Ga-DOTANOC, are the most prominent radiopharmaceuticals currently in use for imaging and differentiating lesions of various somatostatin receptor subtypes, overexpressed in many neuroendocrine tumors. There has been a tremendous increase in the number of clinical studies with (68)Ga over the past few years around the world, including within the United States. An estimated ∼10,000 scans are being performed yearly in Europe at about 100 centers utilizing (68)Ga-labeled somatostatin analogs within clinical trials. Two academic sites within the US have also begun to undertake human studies. This review will focus on the clinical experience of selected, well-established and recently applied (68)Ga-labeled imaging agents used in nuclear medicine.

  6. Design of a hairpin polyamide, ZT65B, for targeting the inverted CCAAT box (ICB) site in the multidrug resistant (MDR1) gene.

    PubMed

    Buchmueller, Karen L; Taherbhai, Zarmeen; Howard, Cameron M; Bailey, Suzanna L; Nguyen, Binh; O'Hare, Caroline; Hochhauser, Daniel; Hartley, John A; Wilson, W David; Lee, Moses

    2005-12-01

    A novel hairpin polyamide, ZT65B, containing a 3-methylpicolinate moiety was designed to target the inverted CCAAT box (ICB) of the human multidrug resistance 1 gene (MDR1) promoter. Binding of nuclear factor-Y (NF-Y) to the ICB site upregulates MDR1 gene expression and is, therefore, a good target for anticancer therapeutic agents. However, it is important to distinguish amongst different promoter ICB sites so that only specific genes will be affected. All ICB sites have the same sequence but they differ in the sequence of the flanking base pairs, which can be exploited in the design of sequence-specific polyamides. To test this hypothesis, ten ICB-containing DNA hairpins were designed with different flanking base pairs; the sequences ICBa and ICBb were similar to the 3'-ICB site of MDR1 (TGGCT). Thermal-denaturation studies showed that ZT65B effectively targeted ICBa and ICBb (DeltaTM=6.5 and 7.0 degrees C) in preference to the other DNA hairpins (<3.5 degrees C), with the exception of ICBc (5.0 degrees C). DNase I-footprinting assays were carried out with the topoisomerase IIalpha-promoter sequence, which contains five ICB sites; of these, ICB1 and ICB5 are similar to the ICB site of MDR1. ZT65B was found to selectively bind ICB1 and ICB5; footprints were not observed with ICB2, ICB3, or ICB4. A strong, positive induced ligand band at 325 nm in CD studies confirmed that ZT65B binds in the DNA minor groove. The selectivity of ZT65B binding to hairpins that contained the MDR1 ICB site compared to one that did not (ICBd) was confirmed by surface-plasmon studies, and equilibrium constants of 5x10(6)-1x10(7) and 4.6x10(5) M-1 were obtained with ICB1, ICB5,and ICB2 respectively. ZT65B and the previously published JH37 (J. A. Henry, et al. Biochemistry 2004, 43, 12 249-12 257) serve as prototypes for the design of novel polyamides. These can be used to specifically target the subset of ubiquitous gene elements known as ICBs, and thereby affect the expression of one or

  7. Cutaneous gallium uptake in patients with AIDS with mycobacterium avium-intracellulare septicemia

    SciTech Connect

    Allwright, S.J.; Chapman, P.R.; Antico, V.F.; Gruenewald, S.M.

    1988-07-01

    Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection.

  8. Gallium-containing anticancer compounds.

    PubMed

    Chitambar, Christopher R

    2012-06-01

    There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin's lymphoma and bladder cancer in clinical trials. Gallium can function as an iron mimetic and perturb iron-dependent proliferation and other iron-related processes in tumor cells. Gallium nitrate lacks crossresistance with conventional chemotherapeutic drugs and is not myelosuppressive; it can be used when other drugs have failed or when the blood count is low. Given the therapeutic potential of gallium, newer generations of gallium compounds are now in various phases of preclinical and clinical development. These compounds hold the promise of greater anti-tumor activity against a broader spectrum of cancers. The development of gallium compounds for cancer treatment and their mechanisms of action will be discussed.

  9. Bulk Cubic Gallium Nitride

    DTIC Science & Technology

    1999-02-09

    microcrysta. form at bottom of «he reaction vessel. The objective of the second step is the solvothermal transport of the gallium nitride residing in the...system using pressure pumps can be used to gain precise control of the pressure. High pressure is typically used for the solvothermal transport. The...takes place in the reaction vessel during heating is a solvothermal reaction that is conducted at or above the critical point of the solvent The

  10. Gallium interactions with Zircaloy

    SciTech Connect

    Woods, A.L.; West, M.K.

    1999-01-01

    This study focuses on the effects of gallium ion implantation into zircaloy cladding material to investigate the effects that gallium may have in a reactor. High fluence ion implantation of Ga ions was conducted on heated Zircaloy-4 in the range of 10{sup 16}--10{sup 18} Ga ions/cm2. Surface effects were studied using SEM and electron microprobe analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluence of 10{sup 17} Ga ions/cm{sup 2}. After implantation of 10{sup 18} Ga ions/cm{sup 2}, sub-grain features on the order of 2 {micro}m were observed which may be due to intermetallic compound formation between Ga and Zr. For the highest fluence implant, Ga content in the Zirc-4 reached a saturation value of between 30 and 40 atomic %; significant enhanced diffusion was observed but gallium was not seen to concentrate at grain boundaries.

  11. Application of ultrasound in solvent extraction of nickel and gallium

    SciTech Connect

    Pesic, B.

    1996-07-01

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  12. Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

    SciTech Connect

    Coleman, J.P.; Monzyk, B.F.

    1988-07-26

    The method of dissociating gallium arsenide into a gallium-containing component and an arsenic-containing component, is described which comprises contacting the gallium arsenide with an oxidizing agent and a liquid comprising hydroxamic acid to convert the gallium to a gallium-hydroxamic acid complex and to oxidize the arsenic to a positive valence state.

  13. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  14. Gallium Arsenide Domino Circuit

    NASA Technical Reports Server (NTRS)

    Yang, Long; Long, Stephen I.

    1990-01-01

    Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

  15. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; DiNetta, Louis C.; DuganCavanagh, K.; Goetz, M. A.

    1996-01-01

    Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

  16. Gallium nitride nanotube lasers

    DOE PAGES

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; ...

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  17. Enhancing PET Signal at Target Tissue in Vivo: Dendritic and Multimeric Tris(hydroxypyridinone) Conjugates for Molecular Imaging of αvβ3 Integrin Expression with Gallium-68

    PubMed Central

    2016-01-01

    Tris(hydroxypyridinone) chelators conjugated to peptides can rapidly complex the positron-emitting isotope gallium-68 (68Ga) under mild conditions, and the resulting radiotracers can delineate peptide receptor expression at sites of diseased tissue in vivo. We have synthesized a dendritic bifunctional chelator containing nine 1,6-dimethyl-3-hydroxypyridin-4-one groups (SCN-HP9) that can coordinate up to three Ga3+ ions. This derivative has been conjugated to a trimeric peptide (RGD3) containing three peptide groups that target the αvβ3 integrin receptor. The resulting dendritic compound, HP9-RGD3, can be radiolabeled in 97% radiochemical yield at a 3-fold higher specific activity than its homologues HP3-RGD and HP3-RGD3 that contain only a single metal binding site. PET scanning and biodistribution studies show that [68Ga(HP9-RGD3)] demonstrates higher receptor-mediated tumor uptake in animals bearing U87MG tumors that overexpress αvβ3 integrin than [68Ga(HP3-RGD)] and [68Ga(HP3-RGD3)]. However, concomitant nontarget organ retention of [68Ga(HP9-RGD3)] results in low tumor to nontarget organ contrast in PET images. On the other hand, the trimeric peptide homologue containing a single tris(hydroxypyridinone) chelator, [68Ga(HP3-RGD3)], clears nontarget organs and exhibits receptor-mediated uptake in mice bearing tumors and in mice with induced rheumatoid arthritis. PET imaging with [68Ga(HP3-RGD3)] enables clear delineation of αvβ3 integrin receptor expression in vivo. PMID:27966893

  18. Enhancing PET Signal at Target Tissue in Vivo: Dendritic and Multimeric Tris(hydroxypyridinone) Conjugates for Molecular Imaging of αvβ3 Integrin Expression with Gallium-68.

    PubMed

    Imberti, Cinzia; Terry, Samantha Y A; Cullinane, Carleen; Clarke, Fiona; Cornish, Georgina H; Ramakrishnan, Nisha K; Roselt, Peter; Cope, Andrew P; Hicks, Rodney J; Blower, Philip J; Ma, Michelle T

    2017-02-15

    Tris(hydroxypyridinone) chelators conjugated to peptides can rapidly complex the positron-emitting isotope gallium-68 ((68)Ga) under mild conditions, and the resulting radiotracers can delineate peptide receptor expression at sites of diseased tissue in vivo. We have synthesized a dendritic bifunctional chelator containing nine 1,6-dimethyl-3-hydroxypyridin-4-one groups (SCN-HP9) that can coordinate up to three Ga(3+) ions. This derivative has been conjugated to a trimeric peptide (RGD3) containing three peptide groups that target the αvβ3 integrin receptor. The resulting dendritic compound, HP9-RGD3, can be radiolabeled in 97% radiochemical yield at a 3-fold higher specific activity than its homologues HP3-RGD and HP3-RGD3 that contain only a single metal binding site. PET scanning and biodistribution studies show that [(68)Ga(HP9-RGD3)] demonstrates higher receptor-mediated tumor uptake in animals bearing U87MG tumors that overexpress αvβ3 integrin than [(68)Ga(HP3-RGD)] and [(68)Ga(HP3-RGD3)]. However, concomitant nontarget organ retention of [(68)Ga(HP9-RGD3)] results in low tumor to nontarget organ contrast in PET images. On the other hand, the trimeric peptide homologue containing a single tris(hydroxypyridinone) chelator, [(68)Ga(HP3-RGD3)], clears nontarget organs and exhibits receptor-mediated uptake in mice bearing tumors and in mice with induced rheumatoid arthritis. PET imaging with [(68)Ga(HP3-RGD3)] enables clear delineation of αvβ3 integrin receptor expression in vivo.

  19. Gallium Safety in the Laboratory

    SciTech Connect

    Cadwallader, L.C.

    2003-05-07

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  20. Gallium Safety in the Laboratory

    SciTech Connect

    Lee C. Cadwallader

    2003-06-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  1. Potential use of gallium-doped phosphate-based glass material for periodontitis treatment.

    PubMed

    Sahdev, Rohan; Ansari, Tahera I; Higham, Susan M; Valappil, Sabeel P

    2015-07-01

    This study aimed at evaluating the potential effect of gallium-incorporated phosphate-based glasses towards periodontitis-associated bacteria, Porphyromonas gingivalis, and matrix metalloproteinase-13. Periodontitis describes a group of inflammatory diseases of the gingiva and supporting structures of the periodontium. They are initiated by the accumulation of plaque bacteria, such as the putative periodontal pathogen Porphyromonas gingivalis, but the host immune response such as elevated matrix metalloproteinases are the major contributing factor for destruction of periodontal tissues. Antibacterial assays of gallium-incorporated phosphate-based glasses were conducted on Porphyromonas gingivalis ATCC 33277 using disc diffusion assay on fastidious anaerobe agar and liquid broth assay in a modified tryptic soy broth. In vitro study investigated the effect of gallium on purified recombinant human matrix metalloproteinase-13 activity using matrix metalloproteinase assay kit. In vivo biocompatibility of gallium-incorporated phosphate-based glass was evaluated in rats as subcutaneous implants. Antibacterial assay of gallium displayed activity against Porphyromonas gingivalis (inhibition zone of 22 ± 0.5 mm compared with 0 mm for control glass, c-PBG). Gallium in the glass contributed to growth inhibitory effect on Porphyromonas gingivalis (up to 1.30 reductions in log 10 values of the viable counts compared with control) in a modified tryptic soy broth. In vitro study showed gallium-incorporated phosphate-based glasses inhibited matrix metalloproteinase activity significantly (p ≤ 0.01) compared with c-PBG. Evaluation of in vivo biocompatibility of gallium-incorporated phosphate-based glasses in rats showed a non-toxic and foreign body response after 2 weeks of implantation. The results indicate that gallium ions might act on multiple targets of biological mechanisms underlying periodontal disease. Moreover, gallium-incorporated phosphate-based glasses

  2. GALLIUM ARSENIDE DENDRITE SINGLE CRYSTAL PROGRAM

    DTIC Science & Technology

    ARSENIDES, *GALLIUM COMPOUNDS, *LABORATORY FURNACES, * SOLAR CELLS , CRUCIBLES, DESIGN, DIFFUSION, EXPLOSIONS, INTERMETALLIC COMPOUNDS, MATERIALS, PHOSPHORUS, SINGLE CRYSTALS, TEMPERATURE CONTROL, ZINC

  3. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 2 2013-10-01 2013-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  4. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 2 2012-10-01 2012-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  5. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 2 2014-10-01 2014-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  6. 49 CFR 173.162 - Gallium.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 2 2011-10-01 2011-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet...

  7. Progress in gallium arsenide semiconductors

    SciTech Connect

    Brodsky, M.H. )

    1990-02-01

    After almost 30 years as the technology of the future, gallium arsenide has begun to make a place for itself, not by supplanting silicon but by complementing it in new applications. The inherent advantages of the material lie in the speed with which electrons move through it, in weak-signal operations and in the generation and detection of light. These advantages suit it for roles in computing, television reception and the optoelectronic transmission of data through optical-fiber networks. Gallium arsenide light-emitting diodes and lasers used in visual-display technologies and audio-disk players already account for more than $1 billion in sales annually. Hundreds of thousands of satellite-receiving dishes that use gallium arsenide detectors are sold every year, and high-speed circuits using gallium arsenide transistors are projected to reach a similar turnover in a few years. In an economy and society that depend on the rapid exchange of information as well as on the processing of it, many silicon-dominated processors will require a considerable admixture of gallium arsenide components in order to do their jobs.

  8. Gallium phosphide energy converters

    NASA Technical Reports Server (NTRS)

    Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

    1995-01-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  9. Medical applications and toxicities of gallium compounds.

    PubMed

    Chitambar, Christopher R

    2010-05-01

    Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  10. Gallium and Reactor Neutrino Anomalies

    NASA Astrophysics Data System (ADS)

    Acero, M. A.; Giunti, C.; Laveder, M.

    2009-03-01

    The observed deficit in the Gallium radioactive source experiments may be interpreted as a possible indication of active-sterile ν mixing. In the effective framework of two-neutrino mixing we obtain sin2ϑ≳0.03 and Δm≳0.1 eV. The compatibility of this result with the data of the Bugey reactor ν disappearance experiments is studied. It is found that the Bugey data present a hint of neutrino oscillations with 0.02≲sin2ϑ≲0.08 and Δm≈1.8 eV, which is compatible with the Gallium allowed region of the mixing parameters. This hint persists in the combined analysis of Gallium, Bugey, and Chooz data.

  11. Mineral resource of the month: gallium

    USGS Publications Warehouse

    Jaskula, Brian W.

    2009-01-01

    The metal element gallium occurs in very small concentrations in rocks and ores of other metals — native gallium is not known. As society gets more and more high-tech, gallium becomes more useful. Gallium is one of only five metals that are liquid at or close to room temperature. It has one of the longest liquid ranges of any metal (29.8 degrees Celsius to 2204 degrees Celsius) and has a low vapor pressure even at high temperatures. Ultra-pure gallium has a brilliant silvery appearance, and the solid metal exhibits conchoidal fracture similar to glass.

  12. Renal amyloidosis. Evaluation by gallium imaging

    SciTech Connect

    Lee, V.W.; Skinner, M.; Cohen, A.S.; Ngai, S.; Peng, T.T.

    1986-09-01

    A study has been performed to evaluate the efficacy of gallium imaging in the detection of renal amyloidosis. Ten of the 11 patients who had biopsy-proven renal amyloidosis demonstrated marked uptake in both kidneys. One patient revealed moderate gallium uptake in his kidneys. None of the patients had underlying renal or extrarenal pathology other than amyloidosis, which could account for renal gallium uptake (renal infection, neoplasm, hepatic failure or frequent blood transfusions). Four patients also had extrarenal foci of abnormal gallium uptake, suggesting other sites of amyloid deposits. Our data strongly suggest that gallium imaging has a high sensitivity for detection of renal amyloidosis. Its specificity is enhanced significantly by careful review of the clinical history to exclude other known causes of renal gallium uptake. Potentially, gallium imaging may be used to monitor the progress of patients under experimental therapy.

  13. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  14. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.

    PubMed

    Tanaka, Akiyo

    2004-08-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials.

  15. Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment.

    PubMed

    Vasquez, M R; Flauta, R E; Wada, M

    2008-02-01

    Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source.

  16. Oligonuclear gallium nitrogen cage compounds: molecular intermediates on the way from gallium hydrazides to gallium nitride.

    PubMed

    Uhl, Werner; Abel, Thomas; Hagemeier, Elke; Hepp, Alexander; Layh, Marcus; Rezaeirad, Babak; Luftmann, Heinrich

    2011-01-03

    Gallium hydrazides are potentially applicable as facile starting compounds for the generation of GaN by thermolysis. The decomposition pathways are, however, complicated and depend strongly on the substituents attached to the gallium atoms and the hydrazido groups. This paper describes some systematic investigations into the thermolysis of the gallium hydrazine adduct Bu(t)(3)Ga←NH(2)-NHMe (1a) and the dimeric gallium hydrazides [R(2)Ga(N(2)H(2)R')](2) (2b, R = Bu(t), R' = Bu(t); 2c, R = Pr(i), R' = Ph; 2d, R = Me, R' = Bu(t)) which have four- or five-membered heterocycles in their molecular cores. Heating of the adduct 1a to 170 °C gave the heterocyclic compound Bu(t)(2)Ga(μ-NH(2))[μ-N(Me)-N(=CH(2))]GaBu(t)(2) (3) by cleavage of N-N bonds and rearrangement. 3 was further converted at 400 °C into the tetrameric gallium cyanide (Bu(t)(2)GaCN)(4) (4). The thermolysis of the hydrazide (Bu(t)(2)Ga)(2)(NH-NHBu(t))(2) (2b) at temperatures between 270 and 420 °C resulted in cleavage of all N-N bonds and the formation of an octanuclear gallium imide, (Bu(t)GaNH)(8) (6). The trimeric dialkylgallium amide (Bu(t)(2)GaNH(2))(3) (5) was isolated as an intermediate. Thermolysis of the hydrazides (Pr(i)(2)Ga)(2)(NH-NHPh)(NH(2)-NPh) (2c) and (Me(2)Ga)(2)(NH-NHBu(t))(2) (2d) proceeded in contrast with retention of the N-N bonds and afforded a variety of novel gallium hydrazido cage compounds with four gallium atoms and up to four hydrazido groups in a single molecule: (Pr(i)Ga)(4)(NH-NPh)(3)NH (7), (MeGa)(4)(NH-NBu(t))(4) (8), (MeGa)(4)(NH-NBu(t))(3)NBu(t) (9), and (MeGa)(4)(NHNBu(t))(3)NH (10). Partial hydrolysis gave reproducibly the unique octanuclear mixed hydrazido oxo compound (MeGa)(8)(NHNBu(t))(4)O(4) (11).

  17. P-type gallium nitride

    DOEpatents

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  18. P-type gallium nitride

    DOEpatents

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  19. Gallium scan in intracerebral sarcoidosis

    SciTech Connect

    Makhija, M.C.; Anayiotos, C.P.

    1981-07-01

    Sarcoidosis involving the nervous system probably occurs in about 4% of patients. The usefulness of brain scintigraphy in these cases has been suggested. In this case of cerebral sarcoid granuloma, gallium imaging demonstrated the lesion before treatment and showed disappearance of the lesion after corticosteroid treatment, which correlated with the patient's clinical improvement.

  20. Liquid gallium rotary electric contract

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.

    1969-01-01

    Due to its low vapor pressure, gallium, when substituted for mercury in a liquid slip ring system, transmits substantial amounts of electrical current to rotating components in an ultrahigh vacuum. It features low electrical loss, little or no wear, and long maintenance-free life.

  1. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  2. The NF-κB p65/miR-23a-27a-24 cluster is a target for leukemia treatment.

    PubMed

    Zhang, Yong-Chang; Ye, Hui; Zeng, Zhi; Chin, Y Eugene; Huang, Yu-Ning; Fu, Guo-Hui

    2015-10-20

    p65 is a transcription factor that is involved in many physiological and pathologic processes. Here we report that p65 strongly binds to the miR-23a-27a-24 cluster promoter to up-regulate its expression. As bone marrow-derived cells differentiate into red blood cells in vitro, p65/miR-23a-27a-24 cluster expression increases sharply and then declines before the appearance of red blood cells, suggesting that this cluster is negatively related to erythroid terminal differentiation. Bioinformatic and molecular biology experiments confirmed that the miR-23a-27a-24 cluster inhibited the expression of the erythroid proteome and contributed to erythroleukemia progression. In addition, high level of the p65/miR-23a-27a-24 cluster was found in APL and AML cell lines and in nucleated peripheral blood cells from leukemia patients. Furthermore, anti-leukemia drugs significantly inhibited the expression of the p65/miR-23a-27a-24 cluster in leukemia cells. Administration of the p65 inhibitor parthenolide significantly improved hematology and myelogram indices while prolonging the life span of erythroleukemia mice. Meanwhile, stable overexpression of these three miRNAs in mouse erythroleukemia cells enhanced cell malignancy. Our findings thus connect a novel regulation pathway of the p65/miR-23a-27a-24 cluster with the erythroid proteome and provide an applicable approach for treating leukemia.

  3. Construction of Gallium Point at NMIJ

    NASA Astrophysics Data System (ADS)

    Widiatmo, J. V.; Saito, I.; Yamazawa, K.

    2017-03-01

    Two open-type gallium point cells were fabricated using ingots whose nominal purities are 7N. Measurement systems for the realization of the melting point of gallium using these cells were built. The melting point of gallium is repeatedly realized by means of the measurement systems for evaluating the repeatability. Measurements for evaluating the effect of hydrostatic pressure coming from the molten gallium existing during the melting process and the effect of gas pressure that fills the cell were also performed. Direct cell comparisons between those cells were conducted. This comparison was aimed to evaluate the consistency of each cell, especially related to the nominal purity. Direct cell comparison between the open-type and the sealed-type gallium point cell was also conducted. Chemical analysis was conducted using samples extracted from ingots used in both the newly built open-type gallium point cells, from which the effect of impurities in the ingot was evaluated.

  4. Running droplets of gallium from evaporation of gallium arsenide.

    PubMed

    Tersoff, J; Jesson, D E; Tang, W X

    2009-04-10

    High-temperature annealing of gallium arsenide in vacuum causes excess evaporation of arsenic, with accumulation of gallium as liquid droplets on the surface. Using real-time in situ surface electron microscopy, we found that these droplets spontaneously run across the crystal surface. Running droplets have been seen in many systems, but they typically require special surface preparation or gradient forces. In contrast, we show that noncongruent evaporation automatically provides a driving force for running droplets. The motion is predicted and observed to slow and stop near a characteristic temperature, with the speed increasing both below and above this temperature. The same behavior is expected to occur during the evaporation of similar III-V semiconductors such as indium arsenide.

  5. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  6. Hepatocellular carcinoma detection by gallium scan and subsequent treatment by gallium maltolate: rationale and case study.

    PubMed

    Bernstein, Lawrence R; van der Hoeven, Jacobus J M; Boer, Robbert O

    2011-07-01

    Gallium is antiproliferative to many types of cancer, due primarily to its ability to act as a non-functional mimic of ferric iron (Fe(3+)). Because Fe(3+) is needed for ribonucleotide reductase activity--and thus DNA synthesis--gallium can inhibit DNA production and cell division. Diagnostic gallium scans have shown that hepatocellular carcinoma (HCC) is commonly avid for gallium. Furthermore, in vitro studies have found that gallium nitrate, and particularly gallium maltolate (GaM), have dose-dependent antiproliferative activity against HCC cell lines. Rationale thus exists to use GaM, an orally active compound that has been well tolerated in Phase I clinical trials, to treat patients whose HCC is gallium-avid in a gallium scan. Because gallium absorbed from orally administered GaM is bound predominately to serum transferrin, which travels to all tissues in the body, GaM has the potential to treat even distant metastases. A patient with advanced HCC (20 × 10 cm primary tumor, ascites around liver and spleen, resistant to Nexavar(®) (sorafenib)), whose cancer was highly gallium-avid in a (67)Ga-scan, was treated with oral gallium maltolate at 1500 mg/day q.d. After four weeks of treatment, the patient had a large reduction in pain, with greatly increased mobility and quality of life, and significantly lowered serum bilirubin and inflammation-related liver enzymes. At eight weeks, CT scans showed apparent necrosis of the tumor.

  7. Gallium Electromagnetic (GEM) Thrustor Concept and Design

    NASA Technical Reports Server (NTRS)

    Polzin, Kurt A.; Markusic, Thomas E.

    2006-01-01

    We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

  8. Human Bocavirus NS1 and NS1-70 Proteins Inhibit TNF-α-Mediated Activation of NF-κB by targeting p65

    PubMed Central

    Liu, Qingshi; Zhang, Zhenfeng; Zheng, Zhenhua; Zheng, Caishang; Liu, Yan; Hu, Qinxue; Ke, Xianliang; Wang, Hanzhong

    2016-01-01

    Human bocavirus (HBoV), a parvovirus, is a single-stranded DNA etiologic agent causing lower respiratory tract infections in young children worldwide. Nuclear factor kappa B (NF-κB) transcription factors play crucial roles in clearance of invading viruses through activation of many physiological processes. Previous investigation showed that HBoV infection could significantly upregulate the level of TNF-α which is a strong NF-κB stimulator. Here we investigated whether HBoV proteins modulate TNF-α–mediated activation of the NF-κB signaling pathway. We showed that HBoV NS1 and NS1-70 proteins blocked NF-κB activation in response to TNF-α. Overexpression of TNF receptor-associated factor 2 (TRAF2)-, IκB kinase alpha (IKKα)-, IκB kinase beta (IKKβ)-, constitutively active mutant of IKKβ (IKKβ SS/EE)-, or p65-induced NF-κB activation was inhibited by NS1 and NS1-70. Furthermore, NS1 and NS1-70 didn’t interfere with TNF-α-mediated IκBα phosphorylation and degradation, nor p65 nuclear translocation. Coimmunoprecipitation assays confirmed the interaction of both NS1 and NS1-70 with p65. Of note, NS1 but not NS1-70 inhibited TNF-α-mediated p65 phosphorylation at ser536. Our findings together indicate that HBoV NS1 and NS1-70 inhibit NF-κB activation. This is the first time that HBoV has been shown to inhibit NF-κB activation, revealing a potential immune-evasion mechanism that is likely important for HBoV pathogenesis. PMID:27329558

  9. Arsenic interstitial diffusion in gallium arsenide: A computational physicist's perspective

    NASA Astrophysics Data System (ADS)

    Papoulias, Panagiotis

    This thesis elucidates the importance of interstitial diffusion in semiconductors. Although more investigations have been made for silicon, the most widely used semiconductor, much less is known about arsenic interstitial diffusion in gallium arsenide -- another important technological material. Because a quantitative and qualitative description of diffusion of the arsenic split interstitial in gallium arsenide is expected to be dependent on the electrical conditions of the material, this thesis begins by examining the convergence of density-functional supercell calculations for defect formation energies, charge transition levels, localized defect state properties, defect atomic structure, relaxation. Supercells containing up to 217 atoms and a variety of k-space sampling schemes are considered. It is shown that a good description of the localized defect state and charge state transition levels requires at least a 217-atom supercell, although the defect structure and atomic relaxations can be well converged in a 65-atom cell. Formation energies are calculated for the arsenic split interstitial, gallium vacancy, and arsenic antisite defects in gallium arsenide, taking into account the dependence upon chemical potential and Fermi energy. It is found that equilibrium concentrations of arsenic interstitials will be much lower than equilibrium concentrations of arsenic antisites in arsenic-rich, n-type or semi-insulating gallium arsenide. The migration barriers for diffusion of arsenic split interstitials that are evaluated indicate that arsenic interstitials are mobile. A qualitative description of the minimum energy path shows that depending on the charge state arsenic interstitials can interact with defects and dopants on either sublattice. These results can be used as inputs into computational simulations of experiments. Also, this thesis shows that under near equilibrium conditions it is expected positively charged interstitials will dominate the diffusion for a

  10. Electrospun Gallium Nitride Nanofibers (abstract)

    NASA Astrophysics Data System (ADS)

    Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  11. The surface tension of liquid gallium

    NASA Technical Reports Server (NTRS)

    Hardy, S. C.

    1985-01-01

    The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

  12. Status of gallium-67 in tumor detector

    SciTech Connect

    Hoffer, P.

    1980-04-01

    The efficacy of gallium-67 citrate in detecting specific tumors is discussed. Tumors in which gallium-67 imaging is useful as a diagnostic tool include Hodgkin's disease, histiocystic lymphoma, Burkitt's lymphoma, hepatoma melanoma, and leukemia. It has not been found to be effective in diagnosing head and neck tumors, gastrointestinal tumors, genitourinary tract tumors, breast tumors, and pediatric tumors. Gallium may be useful in the evaluation of non-Hodgkin's lymphoma, testicular carcinoma, mesothelioma, and carcinoma of the lung. It may also be useful for determining response to treatment and prognosis in some neoplasms.

  13. Survey of the market, supply, and availability of gallium

    SciTech Connect

    Rosi, F.D.

    1980-01-01

    The present and potential availability of gallium metal in connection with materials evaluation recommendations for satellite power systems is examined in the following areas: (1) market considerations - the present and emerging uses of gallium, as well as the consumption and price of gallium; (2) supply considerations - present sources of gallium, commercial and new methods for extracting gallium from bauxite, and summary comments; (3) methods for purifying gallium to satisfy market demands; (4) principal suppliers of gallium; and (5) gallium availability from bauxite on the basis of primary aluminum production; and bauxite production, reserves and resources. The study was based on published information as well as information derived from private communications with both major and potential suppliers and users of gallium, and with staff members at the Bureau of Mines. 16 references, 3 figures, 6 tables.

  14. Radiochemical separation of gallium by amalgam exchange

    USGS Publications Warehouse

    Ruch, R.R.

    1969-01-01

    An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

  15. Materials synthesis: Two-dimensional gallium nitride

    NASA Astrophysics Data System (ADS)

    Koratkar, Nikhil A.

    2016-11-01

    Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not amenable to synthesis by traditional methods.

  16. Multiple microRNAs within the 14q32 cluster target the mRNAs of major type 1 diabetes autoantigens IA-2, IA-2β, and GAD65.

    PubMed

    Abuhatzira, Liron; Xu, Huanyu; Tahhan, Georges; Boulougoura, Afroditi; Schäffer, Alejandro A; Notkins, Abner L

    2015-10-01

    Islet antigen (IA)-2, IA-2β, and glutamate decarboxylase (GAD65) are major autoantigens in type 1 diabetes (T1D). Autoantibodies to these autoantigens appear years before disease onset and are widely used as predictive markers. Little is known, however, about what regulates the expression of these autoantigens. The present experiments were initiated to test the hypothesis that microRNAs (miRNAs) can target and affect the levels of these autoantigens. Bioinformatics was used to identify miRNAs predicted to target the mRNAs coding IA-2, IA-2β, and GAD65. RNA interference for the miRNA processing enzyme Dicer1 and individual miRNA mimics and inhibitors were used to confirm the effect in mouse islets and MIN6 cells. We show that the imprinted 14q32 miRNA cluster contains 56 miRNAs, 32 of which are predicted to target the mRNAs of T1D autoantigens and 12 of which are glucose-sensitive. Using miRNA mimics and inhibitors, we confirmed that at least 7 of these miRNAs modulate the mRNA levels of the T1D autoantigens. Dicer1 knockdown significantly reduced the mRNA levels of all 3 autoantigens, further confirming the importance of miRNAs in this regulation. We conclude that miRNAs are involved in regulating the expression of the major T1D autoantigens.

  17. Investigation on gallium ions impacting monolayer graphene

    SciTech Connect

    Wu, Xin; Zhao, Haiyan Yan, Dong; Pei, Jiayun

    2015-06-15

    In this paper, the physical phenomena of gallium (Ga{sup +}) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga{sup +} ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga{sup +} ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm{sup 2}. Afterwards, the focused ion beam over 21.6 ion/nm{sup 2} is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  18. Generator for gallium-68 and compositions obtained therefrom

    DOEpatents

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  19. Gallium poisoning: a rare case report.

    PubMed

    Ivanoff, Chris S; Ivanoff, Athena E; Hottel, Timothy L

    2012-02-01

    The authors present a case of a college student who suffered acute gallium poisoning as a result of accidental exposure to gallium halide complexes. This is extremely rare and has never been reported in the literature. Acute symptoms after the incident, which initially presented as dermatitis and appeared relatively not life-threatening, rapidly progressed to dangerous episodes of tachycardia, tremors, dyspnea, vertigo, and unexpected black-outs. Had there been effective emergency medical care protocols, diagnostic testing, treatment and antidotes, the latent manifestations of irreversible cardiomyopathy may have been prevented. Given how quickly exposure led to morbidity, this article aims to raise an awareness of the toxic potential of gallium. This has particular relevance for workers involved in the production of semiconductors where there is a potential for accidental exposure to gallium by-products during device processing. It may also have implications for dentists who use gallium alloys to replace mercury containing amalgam. In the absence of threshold limit values and exposure limits for humans, as well as emergency medical guidelines for treatment of poisoning, the case calls on the National Institute for Occupational Safety and Health and the Occupational Safety and Health Administration to establish guidelines and medical management protocols specific for gallium.

  20. Gallium Arsenide wafer scale integration

    NASA Astrophysics Data System (ADS)

    McDonald, J. F.; Taylor, G.; Steinvorth, R.; Donlan, B.; Bergendahl, A. S.

    1985-08-01

    Gallium Arsenide (GaAs) digital MESFET technology has recently begun to appear in the semiconductor marketplace. The initial commercial offerings are at the small to medium scale integration levels. The high speed of these parts would seem to be very attractive for designers of high performance signal processing equipment. Persistent yield problems, however, have prevented the appearance of large scale integrated circuits. As a result, intrapackage and interpackage signal propagation problems such as coupling, parasitics and delay are likely to negate much of the benefits of the fast MESFET logic devices for large systems constructed with such small scale building blocks. An early packaging concept, Wafer Scale Integration (WSI), which could possibly be used to address some of these limitations is reexamined.

  1. Window structure for passivating solar cells based on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  2. Recognition of distinctive patterns of gallium-67 distribution in sarcoidosis

    SciTech Connect

    Sulavik, S.B.; Spencer, R.P.; Weed, D.A.; Shapiro, H.R.; Shiue, S.T.; Castriotta, R.J. )

    1990-12-01

    Assessment of gallium-67 ({sup 67}Ga) uptake in the salivary and lacrimal glands and intrathoracic lymph nodes was made in 605 consecutive patients including 65 with sarcoidosis. A distinctive intrathoracic lymph node {sup 67}Ga uptake pattern, resembling the Greek letter lambda, was observed only in sarcoidosis (72%). Symmetrical lacrimal gland and parotid gland {sup 67}Ga uptake (panda appearance) was noted in 79% of sarcoidosis patients. A simultaneous lambda and panda pattern (62%) or a panda appearance with radiographic bilateral, symmetrical, hilar lymphadenopathy (6%) was present only in sarcoidosis patients. The presence of either of these patterns was particularly prevalent in roentgen Stages I (80%) or II (74%). We conclude that simultaneous (a) lambda and panda images, or (b) a panda image with bilateral symmetrical hilar lymphadenopathy on chest X-ray represent distinctive patterns which are highly specific for sarcoidosis, and may obviate the need for invasive diagnostic procedures.

  3. Correction: Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

    PubMed

    Sarkar, Sujoy; Sampath, S

    2016-05-28

    Correction for 'Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control' by Sujoy Sarkar et al., Chem. Commun., 2016, 52, 6407-6410.

  4. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  5. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  6. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  7. Gallium Zeolites for Light Paraffin Aromatization

    SciTech Connect

    Price, G.L.; Dooley, K.M.

    1999-02-10

    The primary original goal of this project was to investigate the active state of gallium-containing MFI catalysts for light paraffin aromatization, in particular the state of gallium in the active material. Our original hypothesis was that the most active and selective materials were those which contained gallium zeolitic cations, and that previously reported conditions for the activation of gallium-containing catalysts served to create these active centers. We believed that in high silica materials such as MFI, ion-exchange is most effectively accomplished with metals in their 1+ oxidation state, both because of the sparsity of the anionic ion-exchange sites associated with the zeolite, and because the large hydration shells associated with aqueous 3+ cations hinder transport. Metals such as Ga which commonly exist in higher oxidation states need to be reduced to promote ion-exchange and this is the reason that reduction of gallium-containing catalysts for light paraffin aromatization often yields a dramatic enhancement in catalytic activity. We have effectively combined reduction with ion-exchange and we term this combined process ''reductive solid-state ion-exchange''. Our hypothesis has largely been proven true, and a number of the papers we have published directly address this hypothesis.

  8. Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

    PubMed

    Sarkar, Sujoy; Sampath, S

    2016-05-11

    A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

  9. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  10. New SMU Gallium Fixed-Point Cells

    NASA Astrophysics Data System (ADS)

    Ranostaj, Juraj; Ďuriš, Stanislav; Knorová, Renáta; Kaskötö, Mariana; Vyskočilová, Irena

    2011-08-01

    In the framework of the European research project EURAMET 732, the Slovak Institute of Metrology (SMU) built three primary gallium fixed-point cells of different designs. The cells are designed for the calibration of the long-stem SPRT. In regard to the procedure commonly used at SMU when realizing the gallium point, the cells are designed for use in a stirred liquid bath. This article provides information about the cell designs, materials used, method of filling, and results of the performed experiments. The experiments were focused on the study of the cells' metrological characteristics, some effects that could influence the melting-point temperature and the effect of the melted metal fraction on the immersion profile. New cells were compared with the SMU reference gallium cell.

  11. /sup 67/Gallium lung scans in progressive systemic sclerosis

    SciTech Connect

    Baron, M.; Feiglin, D.; Hyland, R.; Urowitz, M.B.; Shiff, B.

    1983-08-01

    /sup 67/Gallium lung scans were performed in 19 patients with progressive systemic sclerosis (scleroderma). Results were expressed quantitatively as the /sup 67/Gallium Uptake Index. The mean total pulmonary /sup 67/Gallium Uptake Index in patients was significantly higher than that in controls (41 versus 25), and 4 patients (21%) fell outside the normal range. There were no clinical or laboratory variables that correlated with the /sup 56/Gallium uptake. Increased pulmonary /sup 67/Gallium uptake in scleroderma may prove useful as an index of pulmonary disease activity.

  12. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Joslin, D.; Garlick, J.; Lillington, D.; Gillanders, M.; Cavicchi, B.; Scott-Monck, J.; Kachare, R.; Anspaugh, B.

    1987-01-01

    High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

  13. Four Terminal Gallium Nitride MOSFETs

    NASA Astrophysics Data System (ADS)

    Veety, Matthew Thomas

    All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric

  14. Synchrotron X-ray fluorescence microscopy of gallium in bladder tissue following gallium maltolate administration during urinary tract infection.

    PubMed

    Ball, Katherine R; Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L; Blyth, Robert I R; Sham, Tsun-Kong; Dowling, Patricia M; Thompson, Julie

    2013-11-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli.

  15. Synchrotron X-Ray Fluorescence Microscopy of Gallium in Bladder Tissue following Gallium Maltolate Administration during Urinary Tract Infection

    PubMed Central

    Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L.; Blyth, Robert I. R.; Sham, Tsun-Kong; Dowling, Patricia M.; Thompson, Julie

    2013-01-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli. PMID:23877680

  16. STS 65 Final Report

    NASA Technical Reports Server (NTRS)

    Rice, James E.

    1996-01-01

    The report is organized into sections representing the phases of work performed in analyzing the STS 65 results and preparing the instrument for STS 73. Section 1 briefly outlines the Orbital Acceleration Research Experiment (OARE) system features, coordinates, and measurement parameters. Section 2 describes the results from STS 65. The mission description, data calibration, and representative data obtained on STS 65 are presented. Also, the anomalous performance of OARE on STS 65 is discussed. Finally, Section 3 presents a discussion of accuracy achieved and achievable with OARE.

  17. Gallium-67 imaging in pulmonary eosinophilic granuloma

    SciTech Connect

    Makhija, M.C.; Davis, G.

    1984-03-01

    Gallium-67 citrate has been known to localize in the lungs in a variety of pulmonary diseases. Abnormal lung activity implies active underlying disease. Serial Ga-67 lung scans may be helpful when steroids are used as therapeutic agents. A case of pulmonary eosinophic granuloma is reported here with diffuse bilateral Ga-67 pulmonary activity.

  18. Gallium Electromagnetic (GEM) Thruster Performance Measurements

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, K. A.

    2009-01-01

    Discharge current, terminal voltage, and mass bit measurements are performed on a coaxial gallium electromagnetic thruster at discharge currents in the range of 7-23 kA. It is found that the mass bit varies quadratically with the discharge current which yields a constant exhaust velocity of 20 km/s. Increasing the electrode radius ratio of the thruster from to 2.6 to 3.4 increases the thruster efficiency from 21% to 30%. When operating with a central gallium anode, macroparticles are ejected at all energy levels tested. A central gallium cathode ejects macroparticles when the current density exceeds 3.7 10(exp 8) A/square m . A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma. The spectra show that neutral, singly, and doubly ionized gallium species are present in the discharge, as well as annular electrode species at higher energy levels. Axial Langmuir triple probe measurements yield electron temperatures in the range of 0.8-3.8 eV and electron densities in the range of 8 x 10(exp )20 to 1.6 x 10(exp 21) m(exp -3) . Triple probe measurements suggest an exhaust plume with a divergence angle of 9 , and a completely doubly ionized plasma at the ablating thruster cathode.

  19. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  20. Solar cell with a gallium nitride electrode

    DOEpatents

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  1. Gallium nitride junction field-effect transistor

    DOEpatents

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  2. Anisotropy of the magnetic susceptibility of gallium

    USGS Publications Warehouse

    Pankey, T.

    1960-01-01

    The bulk magnetic susceptibilities of single gallium crystals and polycrystalline gallium spheres were measured at 25??C. The following anisotropic diamagnetic susceptibilities were found: a axis (-0.119??0. 001)??10-6 emu/g, b axis (-0.416??0.002)??10 -6 emu/g, and c axis (-0.229??0.001) emu/g. The susceptibility of the polycrystalline spheres, assumed to be the average value for the bulk susceptibility of gallium, was (-0.257??0.003)??10-6 emu/g at 25??C, and (-0.299??0.003)??10-6 emu/g at -196??C. The susceptibility of liquid gallium was (0.0031??0.001) ??10-6 emu/g at 30??C and 100??C. Rotational diagrams of the susceptibilities in the three orthogonal planes of the unit cell were not sinusoidal. The anisotropy in the single crystals was presumably caused by the partial overlap of Brillouin zone boundaries by the Fermi-energy surface. The large change in susceptibility associated with the change in state was attributed to the absence of effective mass influence in the liquid state. ?? 1960 The American Institute of Physics.

  3. SPECT gallium imaging in abdominal lymphoma

    SciTech Connect

    Adcock, K.A.; Friefeld, G.D.; Waldron, J.A. Jr.

    1986-05-01

    A case of non-Hodgkin's lymphoma of the abdomen studied by gallium SPECT imaging is reported. The tomographic slices accurately demonstrated the location of residual disease after chemotherapy in the region of the transverse mesocolon. Previous transmission CT had shown considerable persistent retroperitoneal lymphadenopathy, but was not helpful in determining the presence of viable lymphoma.

  4. A Gallium Multiphase Equation of State

    NASA Astrophysics Data System (ADS)

    Crockett, Scott; Greeff, Carl

    2009-06-01

    A new SESAME multiphase gallium equation of state (EOS) has been developed. The equation of state includes two of the solid phases (Ga I, Ga III) and a fluid phase. The EOS includes consistent latent heat between the phases. We compare the results to the liquid Hugoniot data. We will also explore refreezing via isentropic release and compression.

  5. Gallium-positive Lyme disease myocarditis

    SciTech Connect

    Alpert, L.I.; Welch, P.; Fisher, N.

    1985-09-01

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved.

  6. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    PubMed

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage.

  7. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  8. Hydrogen chemisorption on gallium oxide polymorphs.

    PubMed

    Collins, Sebastián E; Baltanás, Miguel A; Bonivardi, Adrian L

    2005-02-01

    The chemisorption of H(2) over a set of gallia polymorphs (alpha-, beta-, and gamma-Ga(2)O(3)) has been studied by temperature-programmed adsorption equilibrium and desorption (TPA and TPD, respectively) experiments, using in situ transmission infrared spectroscopy. Upon heating the gallium oxides above 500 K in 101.3 kPa of H(2), two overlapped infrared signals developed. The 2003- and 1980-cm(-1) bands were assigned to the stretching frequencies of H bonded to coordinatively unsaturated (cus) gallium cations in tetrahedral and octahedral positions [nu(Ga(t)-H) and nu(Ga(o)-H), respectively]. Irrespective to the gallium cation geometrical environment, (i) a linear relationship between the integrated intensity of the whole nu(Ga-H) infrared band versus the Brunauer-Emmett-Teller surface area of the gallia was found and (ii) TPA and TPD results revealed that molecular hydrogen is dissociatively chemisorbed on any bulk gallium oxide polymorph following two reaction pathways. An endothermal, homolytic dissociation occurs over surface cus-gallium sites at T > 450 K, giving rise to Ga-H(I) bonds. The heat and entropy of this type I hydrogen adsorption were determined by the Langmuir's adsorption model as Deltah(I) = 155 +/- 25 kJ mol(-1) and Deltas(I) = 0.27 +/- 0.11 kJ mol(-1) K(-1). In addition, another exothermic, heterolytic adsorption sets in already in the low-temperature region. This type of hydrogen chemisorption involves surface Ga-O-Ga species, originating GaO-H and Ga-H(II) bonds which can only be removed from the gallia surface after heating under evacuation at T > 650 K. The measured desorption energy of this last, second-order process was equal to 77 +/- 10 kJ mol(-1). The potential of the H(2) chemisorption as a tool to measure or estimate the specific surface area of gallia and to discern the nature and proportion of gallium cation coordination sites on the surface of bulk gallium oxides is also analyzed.

  9. Chemistry and pharmacokinetics of gallium maltolate, a compound with high oral gallium bioavailability.

    PubMed

    Bernstein, L R; Tanner, T; Godfrey, C; Noll, B

    2000-01-01

    Gallium maltolate, tris(3-hydroxy-2-methyl-4H-pyran-4-onato)gallium (GaM), is an orally active gallium compound for therapeutic use. It is moderately soluble in water (10.7 +/- 0.9 mg/mL at 25 composite functionC) with an octanol partition coefficient of 0.41+/-0.08. The molecule is electrically neutral in aqueous solution at neutral pH; a dilute aqueous solution (2.5 x10-(-5) M) showed little dissociation at pH 5.5-8.0. Single crystal X-ray diffraction analysis found the GaM molecule to consist of three maltolate ligands bidentately bound to a central gallium atom in a propeller-like arrangement, with one of the ligands disordered in two possible orientations. The compound is orthorhombic, space group Pbca, unit cell a = 16.675(3), b = 12.034(2), c = 18.435(2) A at 158K. GaM was administered to healthy human volunteers at single doses of 100, 200, 300, and 500 mg (three subjects per dose). GaM was very well tolerated. Oral absorption of Ga into plasma was fairly rapid (absorption half life = 0.8-2.0h), with a central compartment excretion half life of 17-21h. Absorption appeared dose proportional over the dosage range studied. Estimated oral gallium bioavailability was approximately 25-57%, based on comparison with published data on intravenous gallium nitrate. Urinary Ga excretion following oral GaM administration was approximately 2% of the administered dose over 72h, in contrast to 49-94% urinary Ga excretion over 24h following i.v. gallium nitrate administration. We suggest that oral administration of GaM results in nearly all plasma gallium being bound to transferrin, whereas i.v. administration of gallium nitrate results in formation of considerable plasma gallate [Ga(OH)(4) (-)], which is rapidly excreted in the urine. These data support the continued investigation of GaM as an orally active therapeutic gallium compound.

  10. Chemistry and Pharmacokinetics of Gallium Maltolate, a Compound With High Oral Gallium Bioavailability

    PubMed Central

    Tanner, Trevor; Godfrey, Claire; Noll, Bruce

    2000-01-01

    Gallium maltolate, tris(3-hydroxy-2-methyl-4H-pyran-4-onato)gallium (GaM), is an orally active gallium compound for therapeutic use. It is moderately soluble in water (10.7 ± 0.9 mg/mL at 25∘C) with an octanol partition coefficient of 0.41±0.08. The molecule is electrically neutral in aqueous solution at neutral pH; a dilute aqueous solution (2.5 ×10−-5 M) showed little dissociation at pH 5.5-8.0. Single crystal X-ray diffraction analysis found the GaM molecule to consist of three maltolate ligands bidentately bound to a central gallium atom in a propeller-like arrangement, with one of the ligands disordered in two possible orientations. The compound is orthorhombic, space group Pbca, unit cell a = 16.675(3), b = 12.034(2), c = 18.435(2) Å at 158K. GaM was administered to healthy human volunteers at single doses of 100, 200, 300, and 500 mg (three subjects per dose). GaM was very well tolerated. Oral absorption of Ga into plasma was fairly rapid (absorption half life = 0.8-2.0h), with a central compartment excretion half life of 17-21h. Absorption appeared dose proportional over the dosage range studied. Estimated oral gallium bioavailability was approximately 25-57%, based on comparison with published data on intravenous gallium nitrate. Urinary Ga excretion following oral GaM administration was approximately 2% of the administered dose over 72h, in contrast to 49-94% urinary Ga excretion over 24h following i.v. gallium nitrate administration. We suggest that oral administration of GaM results in nearly all plasma gallium being bound to transferrin, whereas i.v. administration of gallium nitrate results in formation of considerable plasma gallate [Ga(OH)4−], which is rapidly excreted in the urine. These data support the continued investigation of GaM as an orally active therapeutic gallium compound. PMID:18475921

  11. Gallium 67 scintigraphy in glomerular disease

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.; Rhee, H.L.; Dunea, G.

    1988-12-01

    To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabetic neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.

  12. 40 CFR 65.15-65.19 - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false 65.15-65.19 Section 65.15-65.19 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions §§ 65.15-65.19...

  13. 40 CFR 65.49-65.59 - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false 65.49-65.59 Section 65.49-65.59 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Storage Vessels §§ 65.49-65.59...

  14. 14 CFR 65.46-65.46b - [Reserved

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false 65.46-65.46b Section 65.46-65.46b Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Air Traffic Control Tower Operators §§ 65.46-65.46b...

  15. 14 CFR 65.46-65.46b - [Reserved

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false 65.46-65.46b Section 65.46-65.46b Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Air Traffic Control Tower Operators §§ 65.46-65.46b...

  16. 14 CFR 65.46-65.46b - [Reserved

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false 65.46-65.46b Section 65.46-65.46b Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Air Traffic Control Tower Operators §§ 65.46-65.46b...

  17. 14 CFR 65.46-65.46b - [Reserved

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false 65.46-65.46b Section 65.46-65.46b Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Air Traffic Control Tower Operators §§ 65.46-65.46b...

  18. 14 CFR 65.46-65.46b - [Reserved

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false 65.46-65.46b Section 65.46-65.46b Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Air Traffic Control Tower Operators §§ 65.46-65.46b...

  19. Survey of the market, supply and availability of gallium

    SciTech Connect

    Rosi, F.D.

    1980-07-01

    The objective of this study was to assess the present consumption and supply of gallium, its potential availability in the satellite power system (SPS) implementation time frame, and commercial and new processing methods for increasing the production of gallium. Findings are reported in detail. The findings strongly suggest that with proper long range planning adequate gallium would be available from free-enterprise world supplies of bauxite for SPS implementation.

  20. Magnetostriction and Magnetic Heterogeneities in Iron-Gallium

    DTIC Science & Technology

    2010-07-08

    REPORT Magnetostriction and Magnetic Heterogeneities in Iron-Gallium 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Iron-gallium alloys Fe1-xGax exhibit...an exceptional increase in magnetostriction with gallium content. We present small-angle neutron scattering investigations on a Fe0.81Ga0.19 single...magnetic heterogeneities in the mechanism for magnetostriction in this material. 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES

  1. Surface photovoltage spectroscopy applied to gallium arsenide surfaces

    NASA Technical Reports Server (NTRS)

    Bynik, C. E.

    1975-01-01

    The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed. The results suggest that in gallium arsenide the surface voltage may be due to deep bulk impurity acceptor states that are pinned at the Fermi level at the surface. Establishment of the validity of this model will indicate the direction to proceed to increase the efficiency of gallium arsenide solar cells.

  2. Inflammatory pseudotumor: A gallium-avid mobile mesenteric mass

    SciTech Connect

    Auringer, S.T.; Scott, M.D.; Sumner, T.E. )

    1991-08-01

    An 8-yr-old boy with a 1-mo history of culture-negative fever and anemia underwent gallium, ultrasound, and computed tomography studies as part of the evaluation of a fever of unknown origin. These studies revealed a mobile gallium-avid solid abdominal mass subsequently proven to be an inflammatory pseudotumor of the mesentery, a rare benign mass. This report documents the gallium-avid nature of this rare lesion and discusses associated characteristic clinical, pathologic, and radiographic features.

  3. Gallium Nitride (GaN) High Power Electronics (FY11)

    DTIC Science & Technology

    2012-01-01

    Gallium Nitride (GaN) High Power Electronics (FY11) by Kenneth A. Jones, Randy P. Tompkins, Michael A. Derenge, Kevin W. Kirchner, Iskander...Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-5903 January 2012 Gallium Nitride (GaN) High Power Electronics (FY11) Kenneth A...DSI 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Gallium Nitride (GaN) High Power Electronics (FY11) 5a. CONTRACT NUMBER 5b. GRANT

  4. Interactions of Zircaloy cladding with gallium: 1998 midyear status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

    1998-06-01

    A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge}300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  5. Interactions of zircaloy cladding with gallium -- 1997 status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

    1997-11-01

    A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge} 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  6. Efficient water reduction with gallium phosphide nanowires

    NASA Astrophysics Data System (ADS)

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-07-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

  7. Efficient water reduction with gallium phosphide nanowires

    PubMed Central

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-01-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires. PMID:26183949

  8. Proton and gallium(III) binding properties of a biologically active salicylidene acylhydrazide.

    PubMed

    Hakobyan, Shoghik; Boily, Jean-François; Ramstedt, Madeleine

    2014-09-01

    Bacterial biofilm formation causes a range of problems in our society, especially in health care. Salicylidene acylhydrazides (hydrazones) are promising antivirulence drugs targeting secretion systems used during bacterial infection of host cells. When mixed with the gallium ion they become especially potent as bacterial and biofilm growth-suppressing agents, although the mechanisms through which this occurs are not fully understood. At the base of this uncertainty lies the nature of hydrazone-metal interactions. This study addresses this issue by resolving the equilibrium speciation of hydrazone-gallium aqueous solutions. The protonation constants of the target 2-oxo-2-[N-(2,4,6-trihydroxy-benzylidene)-hydrazino]-acetamide (ME0163) hydrazone species and of its 2,4,6-trihydroxybenzaldehyde and oxamic acid hydrazide building blocks were determined by UV-visible spectrophotometry to achieve this goal. These studies show that the hydrazone is an excessively strong complexing agent for gallium and that its antivirulence properties are predominantly ascribed to monomeric 1:1Ga-ME0163 complexes of various Ga hydrolysis and ME0163 protonation states. The chelation of Ga(III) to the hydrazone also increased the stability of the compounds against acid-induced hydrolysis, making this group of compounds very interesting for biological applications where the Fe-antagonist action of both Ga(III) and the hydrazone can be combined for enhanced biological effect.

  9. A Gallium multiphase equation of state

    SciTech Connect

    Crockett, Scott D; Greeff, Carl

    2009-01-01

    A new SESAME multiphase Gallium equation of state (EOS) has been developed. The equation of state includes three of the solid phases (Ga I, Ga II, Ga III) and a fluid phase (liquid/gas). The EOS includes consistent latent heat between the phases. We compare the results to the liquid Hugoniol data. We also explore the possibility of re-freezing via dynamic means such as isentropic and shock compression.

  10. Gallium-67 radionuclide imaging in acute pyelonephritis

    SciTech Connect

    Mendez, G.; Morillo, G.; Alonso, M.; Isikoff, M.B.

    1980-01-01

    The symptoms and clinical course of patients with acute pyelonephritis are variable; likewise, urinalysis, blood cultures, and excretory urography may be normal or equivocal. The ability of gallium-67 to accumulate in areas of active inflammation was useful in the diagnosis of acute pyelonephritis in 12 cases. A multiplane tomographic scanner was used for imaging four of these patients. Initial experience with this scanner is also discussed.

  11. a Gallium Multiphase Equation of State

    NASA Astrophysics Data System (ADS)

    Crockett, Scott D.; Greeff, Carl W.

    2009-12-01

    A new SESAME multiphase Gallium equation of state (EOS) has been developed. It includes three of the solid phases (Ga I, Ga II, Ga III) and a fluid phase (liquid/gas). The EOS includes consistent latent heat between the phases. We compare the results to the liquid Hugoniot data. We also explore the possibility of re-freezing via dynamic means such as isentropic and shock compression. We predict an unusual spontaneous spreading of low pressure shocks from STP.

  12. Positron study of annealing of gallium arsenide

    SciTech Connect

    Rice-Evans, P.C.; Smith, D.L.; Evans, H.E.; Gledhill, G.A. )

    1991-02-01

    A positron beam has been used to investigate the sub-surface changes in semi-insulating gallium arsenide which had been annealed to a range of temperatures. The variations of the Doppler S parameter as a function of positron implantation energy, when subjected to a diffusion analysis, indicate variations in positron trapping at different depths. The results indicate the changes in the type of point defect that accompany the annealing.

  13. Preliminary results from the Russian-American gallium experiment Cr-neutrino source measurement

    SciTech Connect

    Elliott, S.R.; Abdurashitov, J.N.; Bowles, T.J.

    1995-12-31

    The Russian-American Gallium Experiment has been collecting solar neutrino data since early 1990. The flux measurement of solar neutrinos is well below that expected from solar models. We discuss the initial results of a measurement of experimental efficiencies by exposing the gallium target to neutrinos from an artificial source. The capture rate of neutrinos from this source is very close to that which is expected. The result can be expressed as a ratio of the measured capture rate to the anticipated rate from the source activity. This ratio is 0.93 + 0.15, {minus}0.17 where the systematic and statistical errors have been combined. To first order the experimental efficiencies are in agreement with those determined during solar neutrino measurements and in previous auxiliary measurements. One must conclude that the discrepancy between the measured solar neutrino flux and that predicted by the solar models can not arise from an experimental artifact. 17 refs., 3 figs., 1 tab.

  14. U-Pb isotopic results for single shocked and polycrystalline zircons record 550-65.5-Ma ages for a K-T target site and 2700-1850-Ma ages for the Sudbury impact event

    NASA Technical Reports Server (NTRS)

    Krogh, T. E.; Kamo, S. L.; Bohor, B. F.

    1992-01-01

    The refractory mineral zircon develops distinct morphological features during shock metamorphism and retains these features under conditions that would anneal them in other minerals. In addition, weakly shocked zircon grains give primary ages for the impact site, while highly reconstituted (polycrystalline) single grains give ages that approach the age of the impact event. Data for a series of originally coeval grains will define a mixing line that gives both of these ages providing that no subsequent geological disturbances have overprinted the isotopic systematics. In this study, we have shown that the three zircon grain types described by Bohor, from both K-T distal ejecta (Fireball layer, Raton Basin, Colorado) and the Onaping Formation, represent a progressive increase in impact-related morphological change that coincides with a progressive increase in isotopic resetting in zircons from the ejecta and basement rocks. Unshocked grains are least affected by isotopic resetting while polycrystalline grains are most affected. U-Pb isotopic results for 12 of 14 single zircon grains from the Fireball layer plot on or close to a line recording a primary age of 550 +/- 10 Ma and a secondary age of 65.5 +/- 3 Ma. Data for the least and most shocked grains plot closest to the primary and secondary ages respectively. The two other grains each give ages between 300 and 350 Ma. This implies that the target ejecta was dominated by 550-Ma rocks and that the recrystallization features of the zircon were superimposed during the impact event at 65.5 Ma. A predominant age of 550 Ma for zircons from the Fireball layer provides an excellent opportunity to identify the impact site and to test the hypothesis that multiple impacts occurred at this time. A volcanic origin for the Fireball layer is ruled out by shock-related morphological changes in zircon and the fact that the least shocked grains are old. Basement Levack gneisses north of the Sudbury structure have a primary age of

  15. High-dose gallium imaging in lymphoma

    SciTech Connect

    Anderson, K.C.; Leonard, R.C.; Canellos, G.P.; Skarin, A.T.; Kaplan, W.D.

    1983-08-01

    The role of gallium-67 imaging in the management of patients with lymphoma, traditionally assessed using low tracer doses and the rectilinear scanner, was assessed when using larger doses (7 to 10 mCi) and a triple-peak Anger camera. Gallium scan results in 51 patients with non-Hodgkin's lymphoma and 21 patients with Hodgkin's disease were compared with simultaneous radiologic, clinical, and histopathologic reports. Subsequent disease course was also evaluated in light of radionuclide findings. Sensitivity and specificity of the scans were 0.90 or greater for both non-Hodgkin's lymphoma and Hodgkin's disease, and overall accuracy by site was 96 percent. Although there are insufficient numbers of pretreatment scans to allow any conclusions, our data suggest that newer approaches to gallium scanning in treated patients are (1) highly specific in all lymphomas and most sensitive in high-grade non-Hodgkin's lymphoma and Hodgkin's disease; (2) valuable in assessing the mediastinum in both non-Hodgkin's lymphoma and Hodgkin's disease; and (3) helpful adjuncts to computed tomographic scanning and ultrasonography in assessing abdominal node disease.

  16. Gallium phosphinoarylbisthiolato complexes counteract drug resistance of cancer cells.

    PubMed

    Fischer-Fodor, Eva; Vălean, Ana-Maria; Virag, Piroska; Ilea, Petru; Tatomir, Corina; Imre-Lucaci, Florica; Schrepler, Maria Perde; Krausz, Ludovic Tibor; Tudoran, Lucian Barbu; Precup, Calin George; Lupan, Iulia; Hey-Hawkins, Evamarie; Silaghi-Dumitrescu, Luminita

    2014-04-01

    In cancer therapy the platinum-based drugs are used frequently with a good clinical outcome, but besides unwanted side effects which occur, the tumour cells subjected to treatment are prone to develop tolerance or even multidrug resistance (MDR). Metal compounds with a central atom other than platinum are efficient in targeting the chemoresistant cells, therefore the biological outcome of two recently synthesized gallium phosphinoarylbisthiolato complexes was studied, having the formula [X][Ga{PPh(2-SC6H4)2-κ(3)S,S',P}{PPh(2-SC6H4)2-κ(2)S,S'}] where [X] is either the NEt3H (1) or PPh4 (2) cation. Compounds 1 and 2 display in vitro cytotoxicity against both platinum-sensitive and platinum-resistant cell lines (A2780 and A2780cis). Morphological and ultrastructural evidence points toward their capacity to impair tumour cells survival. This behaviour is based on malignant cells capacity to selectively intake gallium, and to bind to the cellular DNA. They are able to cause massive DNA damage in treated cancer cells, focusing on 7-methylguanine and 8-oxoguanine sites and oxidizing the pyrimidine bases; this leads to early apoptosis of a significant percent of treated cells. The intrinsic and extrinsic apoptotic pathways are influenced through the modulation of gene expression following the treatment with complexes 1 and 2, which accompanies the negative regulation of P-glycoprotein 1 (Pgp-1), an important cellular ABC-type transporter from the multidrug resistance (MDR) family. The studied Ga(III) compounds demonstrated the capacity to counteract the chemoresistance mechanisms in the tumours defiant to standard drug action. Compound 2 shows a good anticancer potential and it could represent an alternative to platinum-based drugs especially in the situation of standard treatment failure.

  17. Compensation and Characterization of Gallium Arsenide

    NASA Astrophysics Data System (ADS)

    Roush, Randy Allen

    1995-01-01

    The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow silicon donors are compensated by deep acceptors. Copper is an example of a transition metal that forms deep acceptors in GaAs, and therefore this work will focus on the compensation and characterization of GaAs:Si:Cu. The compensation of the material has shown that the lower diffusion temperatures (500-600^ circC) form primarily the well-known Cu _{rm B} centers whereas the higher temperature anneals (>750 ^circC) result in the formation of CU_{rm A}. Using compensation curves, the copper density is found by comparing the compensation temperature with copper solubility curves given by others. These curves also show that the formation of CU_{rm B}, EL2, and CU_{rm A} can be manipulated by varying processing parameters such as annealing temperature and arsenic pressure. The compensation results are confirmed using Temperature-Dependent Hall (TDH) measurements to detect the copper levels. Also, the photoconductive properties of the material under illumination from 1.06 and 2.1 μm wavelength laser pulses have been used to demonstrate the effects of the different processing procedures. The persistent photoconductivity inherent to these devices under illumination from the 1.06 μm laser pulse is used to predict the concentration of the Cu_ {rm B

  18. Gallium scintigraphy in bone infarction. Correlation with bone imaging

    SciTech Connect

    Armas, R.R.; Goldsmith, S.J.

    1984-01-01

    The appearance of gallium-67 images in bone infarction was studied in nine patients with sickle cell disease and correlated with the bone scan findings. Gallium uptake in acute infarction was decreased or absent with a variable bone scan uptake, and normal in healing infarcts, which showed increased uptake on bone scan. The significance of these findings is discussed.

  19. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  20. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    PubMed Central

    Kim, Tae-Hee; Choi, Sooseok; Park, Dong-Wha

    2016-01-01

    Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  1. Investigation of a Gallium MPD Thruster with an Ablating Cathode

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Polzin, Kurt A.

    2010-01-01

    Arc impedance, exhaust velocity, and plasma probe measurements are presented. The thruster is driven by a 50 microsecond pulse from a 6.2 milliohm pulse forming network, and gallium is supplied to the discharge by evaporation of the cathode. The arc voltage is found to vary linearly with the discharge current with an arc impedance of 6.5 milliohms. Electrostatic probes yield an exhaust velocity that is invariant with the discharge current and has a peak value of 20 kilometers per second, which is in reasonable agreement with the value (16 plus or minus 1 kilometer per second) calculated from the mass bit and discharge current data. Triple probe measurements yield on axis electron temperatures in the range of 0.8-3.8 eV, electron densities in the range of 1.6 x 10(exp 21) to 2.1 x 10(exp 22) per cubic meter, and a divergence half angle of 16 degrees. Measurements within the interelectrode region yield a peak magnetic field of 0.8 T, and the observed radial trends are consistent with an azimuthally symmetric current distribution. A cathode power balance model is coupled with an ablative heat conduction model predicting mass bit values that are within 20% of the experimental values.

  2. Two chain gallium fluorodiphosphates: synthesis, structure solution, and their transient presence during the hydrothermal crystallisation of a microporous gallium fluorophosphate.

    PubMed

    Millange, Franck; Walton, Richard I; Guillou, Nathalie; Loiseau, Thierry; O'Hare, Dermot; Férey, Gérard

    2002-04-21

    Two novel gallium fluorodiphosphates have been isolated and their structures solved ab initio from powder X-ray diffraction data; the materials readily interconvert under hydrothermal conditions, and are metastable with respect to an open-framework zeolitic gallium fluorophosphate, during the synthesis of which they are present as transient intermediates.

  3. The Preparation and Structural Characterization of Three Structural Types of Gallium Compounds Derived from Gallium (II) Chloride

    NASA Technical Reports Server (NTRS)

    Gordon, Edward M.; Hepp, Aloysius F.; Duraj. Stan A.; Habash, Tuhfeh S.; Fanwick, Phillip E.; Schupp, John D.; Eckles, William E.; Long, Shawn

    1997-01-01

    The three compounds Ga2Cl4(4-mepy)2 (1),[GaCl2(4-mepy)4]GaCl4x1/2(4-mepy); (2) and GaCl2(4-mepy)2(S2CNEt2); (3) (4-mepy= 4-methylpyridine) have been prepared from reactions of gallium (II) chloride in 4-methylpyridine and characterized by single-crystal X-ray analysis. Small variations in the reaction conditions for gallium(II) chloride can produce crystals with substantially different structural properties. The three compounds described here encompass a neutral gallium(II) dimer in which each gallium is four-coordinate, an ionic compound containing both anionic and cationic gallium complex ions with different coordination numbers and a neutral six-coordinate heteroleptic

  4. In Vitro and In Vivo Antimicrobial Activities of Gallium Nitrate against Multidrug-Resistant Acinetobacter baumannii

    PubMed Central

    Antunes, Luísa C. S.; Imperi, Francesco; Minandri, Fabrizia

    2012-01-01

    Multidrug-resistant Acinetobacter baumannii poses a tremendous challenge to traditional antibiotic therapy. Due to the crucial role of iron in bacterial physiology and pathogenicity, we investigated iron metabolism as a possible target for anti-A. baumannii chemotherapy using gallium as an iron mimetic. Due to chemical similarity, gallium competes with iron for binding to several redox enzymes, thereby interfering with a number of essential biological reactions. We found that Ga(NO3)3, the active component of an FDA-approved drug (Ganite), inhibits the growth of a collection of 58 A. baumannii strains in both chemically defined medium and human serum, at concentrations ranging from 2 to 80 μM and from 4 to 64 μM, respectively. Ga(NO3)3 delayed the entry of A. baumannii into the exponential phase and drastically reduced bacterial growth rates. Ga(NO3)3 activity was strongly dependent on iron availability in the culture medium, though the mechanism of growth inhibition was independent of dysregulation of gene expression controlled by the ferric uptake regulator Fur. Ga(NO3)3 also protected Galleria mellonella larvae from lethal A. baumannii infection, with survival rates of ≥75%. At therapeutic concentrations for humans (28 μM plasma levels), Ga(NO3)3 inhibited the growth in human serum of 76% of the multidrug-resistant A. baumannii isolates tested by ≥90%, raising expectations on the therapeutic potential of gallium for the treatment of A. baumannii bloodstream infections. Ga(NO3)3 also showed strong synergism with colistin, suggesting that a colistin-gallium combination holds promise as a last-resort therapy for infections caused by pan-resistant A. baumannii. PMID:22964249

  5. In vitro and in vivo antimicrobial activities of gallium nitrate against multidrug-resistant Acinetobacter baumannii.

    PubMed

    Antunes, Luísa C S; Imperi, Francesco; Minandri, Fabrizia; Visca, Paolo

    2012-11-01

    Multidrug-resistant Acinetobacter baumannii poses a tremendous challenge to traditional antibiotic therapy. Due to the crucial role of iron in bacterial physiology and pathogenicity, we investigated iron metabolism as a possible target for anti-A. baumannii chemotherapy using gallium as an iron mimetic. Due to chemical similarity, gallium competes with iron for binding to several redox enzymes, thereby interfering with a number of essential biological reactions. We found that Ga(NO(3))(3), the active component of an FDA-approved drug (Ganite), inhibits the growth of a collection of 58 A. baumannii strains in both chemically defined medium and human serum, at concentrations ranging from 2 to 80 μM and from 4 to 64 μM, respectively. Ga(NO(3))(3) delayed the entry of A. baumannii into the exponential phase and drastically reduced bacterial growth rates. Ga(NO(3))(3) activity was strongly dependent on iron availability in the culture medium, though the mechanism of growth inhibition was independent of dysregulation of gene expression controlled by the ferric uptake regulator Fur. Ga(NO(3))(3) also protected Galleria mellonella larvae from lethal A. baumannii infection, with survival rates of ≥75%. At therapeutic concentrations for humans (28 μM plasma levels), Ga(NO(3))(3) inhibited the growth in human serum of 76% of the multidrug-resistant A. baumannii isolates tested by ≥90%, raising expectations on the therapeutic potential of gallium for the treatment of A. baumannii bloodstream infections. Ga(NO(3))(3) also showed strong synergism with colistin, suggesting that a colistin-gallium combination holds promise as a last-resort therapy for infections caused by pan-resistant A. baumannii.

  6. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  7. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    NASA Astrophysics Data System (ADS)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-01

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  8. Electrical characterization of germanium implanted gallium arsenide

    NASA Astrophysics Data System (ADS)

    Pedrotti, F. L.

    1980-06-01

    The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured.

  9. Gallium scintigraphic pattern in lung CMV infections

    SciTech Connect

    Ganz, W.I.; Cohen, D.; Mallin, W.

    1994-05-01

    Due to extensive use of prophylactic therapy for Pneumonitis Carinii Pneumonia (PCP), Cytomegalic Viral (CMV) infection may now be the most common lung infection in AIDS patients. This study was performed to determine Gallium-67 patterns in AIDS patients with CMV. Pathology reports were reviewed in AIDS patients who had a dose of 5 to 10 mCi of Gallium-67 citrate. Analysis of images were obtained 48-72 hours later of the entire body was performed. Gallium-67 scans in 14 AIDS patients with biopsy proven CMV, were evaluated for eye, colon, adrenal, lung and renal uptake. These were compared to 40 AIDS patients without CMV. These controls had infections including PCP, Mycobacterial infections, and lymphocytic interstitial pneumonitis. 100% of CMV patients had bowel uptake greater than or equal to liver. Similar bowel activity was seen in 50% of AIDS patients without CMV. 71% had intense eye uptake which was seen in only 10% of patients without CMV. 50% of CMV patients had renal uptake compared to 5% of non-CMV cases. Adrenal uptake was suggested in 50%, however, SPECT imaging is needed for confirmation. 85% had low grade lung uptake. The low grade lung had perihilar prominence. The remaining 15% had high grade lung uptake (greater than sternum) due to superimposed PCP infection. Colon uptake is very sensitive indicator for CMV infection. However, observing eye, renal, and or adrenal uptake improved the diagnostic specificity. SPECT imaging is needed to confirm renal or adrenal abnormalities due to intense bowel activity present in 100% of cases. When high grade lung uptake is seen superimposed PCP is suggested.

  10. Sodium Flux Growth of Bulk Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Von Dollen, Paul Martin

    This dissertation focused on development of a novel apparatus and techniques for crystal growth of bulk gallium nitride (GaN) using the sodium flux method. Though several methods exist to produce bulk GaN, none have been commercialized on an industrial scale. The sodium flux method offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. But the current equipment and methods for sodium flux growth of bulk GaN are generally not amenable to large-scale crystal growth or in situ investigation of growth processes, which has hampered progress. A key task was to prevent sodium loss or migration from the sodium-gallium growth melt while permitting N2 gas to access the growing crystal, which was accomplished by implementing a reflux condensing stem along with a reusable sealed capsule. The reflux condensing stem also enabled direct monitoring and control of the melt temperature, which has not been previously reported for the sodium flux method. Molybdenum-based materials were identified from a corrosion study as candidates for direct containment of the corrosive sodium-gallium melt. Successful introduction of these materials allowed implementation of a crucible-free containment system, which improved process control and can potentially reduce crystal impurity levels. Using the new growth system, the (0001) Ga face (+c plane) growth rate was >50 mum/hr, which is the highest bulk GaN growth rate reported for the sodium flux method. Omega X-ray rocking curve (?-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were <100 arcseconds. Oxygen impurity concentrations as measured by secondary ion mass spectroscopy (SIMS) were >1020 atoms/cm3, possibly due to reactor cleaning and handling procedures. This dissertation also introduced an in situ technique to correlate changes in N2 pressure with dissolution of nitrogen and precipitation of

  11. Gallium Lanthanum Sulphide Fibers for Infrared Transmission

    NASA Astrophysics Data System (ADS)

    West, Y. D.; Schweizer, T.; Brady, D. J.; Hewak, D. W.

    Gallium lanthanum sulphide (GLS) glass and fiber have potential for use in both active and passive infrared applications. In this paper the optical, thermal, and other key properties, which are essential for understanding the applications and crucial in the quest for practical fibres, are discussed. Glass preparation by melt-quenchingand subsequent fibre fabrication is described using both rod-in-tube and extruded preforms. Absorptive and scattering losses are explored as they could represent a fundamental limitation to successful device fabrication. Potential passive and active applications are reported and the prospects for a future generation of sulphide fiber-based devices examined.

  12. Patterned gallium surfaces as molecular mirrors.

    PubMed

    Bossi, Alessandra; Rivetti, Claudio; Mangiarotti, Laura; Whitcombe, Michael J; Turner, Anthony P F; Piletsky, Sergey A

    2007-09-30

    An entirely new means of printing molecular information on a planar film, involving casting nanoscale impressions of the template protein molecules in molten gallium, is presented here for the first time. The metallic imprints not only replicate the shape and size of the proteins used as template. They also show specific binding for the template species. Such a simple approach to the creation of antibody-like properties in metallic mirrors can lead to applications in separations, microfluidic devices, and the development of new optical and electronic sensors, and will be of interest to chemists, materials scientists, analytical specialists, and electronic engineers.

  13. Gallium induces the production of virulence factors in Pseudomonas aeruginosa.

    PubMed

    García-Contreras, Rodolfo; Pérez-Eretza, Berenice; Lira-Silva, Elizabeth; Jasso-Chávez, Ricardo; Coria-Jiménez, Rafael; Rangel-Vega, Adrián; Maeda, Toshinari; Wood, Thomas K

    2014-02-01

    The novel antimicrobial gallium is a nonredox iron III analogue with bacteriostatic and bactericidal properties, effective for the treatment of Pseudomonas aeruginosa in vitro and in vivo in mouse and rabbit infection models. It interferes with iron metabolism, transport, and presumably its homeostasis. As gallium exerts its antimicrobial effects by competing with iron, we hypothesized that it ultimately will lead cells to an iron deficiency status. As iron deficiency promotes the expression of virulence factors in vitro and promotes the pathogenicity of P. aeruginosa in animal models, it is anticipated that treatment with gallium will also promote the production of virulence factors. To test this hypothesis, the reference strain PA14 and two clinical isolates from patients with cystic fibrosis were exposed to gallium, and their production of pyocyanin, rhamnolipids, elastase, alkaline protease, alginate, pyoverdine, and biofilm was determined. Gallium treatment induced the production of all the virulence factors tested in the three strains except for pyoverdine. In addition, as the Ga-induced virulence factors are quorum sensing controlled, co-administration of Ga and the quorum quencher brominated furanone C-30 was assayed, and it was found that C-30 alleviated growth inhibition from gallium. Hence, adding both C-30 and gallium may be more effective in the treatment of P. aeruginosa infections.

  14. The effect of gallium nitrate on synoviocyte MMP activity.

    PubMed

    Panagakos, F S; Kumar, E; Venescar, C; Guidon, P

    2000-02-01

    Gallium, a group IIIa metal salt, has been demonstrated to be an effective immunosuppressive agent. Gallium has also been shown to inhibit the production of inflammatory cytokines, such as IL-1beta, produced by macrophage-like cells in vitro. To further characterize the effects of gallium on the inflammatory process, we examined the effects of gallium nitrate on matrix metalloproteinase (MMP) activity utilizing the rabbit synoviocyte cell line HIG-82. HIG-82 cells were incubated with IL-1beta and TPA, with and without increasing concentrations of gallium nitrate. Conditioned medium was collected and assayed for MMP activity using a synthetic substrate and substrate gel zymography. IL-1beta and TPA alone induced MMP activity in HIG-82 cells. A dose-dependent inhibition of IL-1beta and TPA stimulated MMP activity by gallium nitrate at increasing concentrations was observed. This study demonstrates that gallium nitrate can inhibit the activity of MMPs and may be useful as a modulator of inflammation in arthritis.

  15. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  16. Behavior of Zircaloy Cladding in the Presence of Gallium

    SciTech Connect

    DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.; Wilson, D.F.

    1998-09-28

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fuel, on cladding material performance. An experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium, and (2) various concentrations of G~03. Three types of tests were performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests were to determine corrosion mechanisms, thresholds for temperature and concentration of gallium that delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Results have generally been favorable for the use of weapons-grade (WG) MOX fhel. The Zircaloy cladding does react with gallium to form intermetallic compounds at >3000 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Furthermore, no evidence for grain boundary penetration by gallium or liquid metal embrittlement was observed.

  17. Gallium scanning in lymphoid interstitial pneumonitis of children with AIDS

    SciTech Connect

    Schiff, R.G.; Kabat, L.; Kamani, N.

    1987-12-01

    Lymphoid interstitial pneumonitis (LIP) is a frequent pulmonary complication in the child with the acquired immune deficiency syndrome (AIDS) and human immunodeficiency virus (HIV) infection. We report the gallium scan findings in two children with AIDS and LIP. Gallium scintigraphy in both children demonstrated increased radionuclide concentration throughout the lungs, a pattern indistinguishable scintigraphically from that of Pneumocystis carinii pneumonia (PCP). This should alert nuclear medicine practitioners and referring physicians to another cause of diffusely increased gallium uptake in the lungs of patients with AIDS.

  18. Antitumor effect of novel gallium compounds and efficacy of nanoparticle-mediated gallium delivery in lung cancer.

    PubMed

    Wehrung, Daniel; Oyewumi, Moses O

    2012-02-01

    The widespread application of gallium (Ga) in cancer therapy has been greatly hampered by lack of specificity resulting in poor tumor accumulation and retention. To address the challenge, two lipophilic gallium (III) compounds (gallium hexanedione; GaH and gallium acetylacetonate; GaAcAc) were synthesized and antitumor studies were conducted in human lung adenocarcinoma (A549) cells. Nanoparticles (NPs) containing various concentrations of the Ga compounds were prepared using a binary mixture of Gelucire 44/14 and cetyl alcohol as matrix materials. NPs were characterized based on size, morphology, stability and biocompatibility. Antitumor effects of free or NP-loaded Ga compounds were investigated based on cell viability, production of reactive oxygen species and reduction of mitochondrial potential. Compared to free Ga compounds, cytotoxicity of NP-loaded Ga (5-150 microg/ml) was less dependent on concentration and incubation time (exposure) with A549 cells. NP-mediated delivery (5-150 microg Ga/ml) enhanced antitumor effects of Ga compounds and the effect was pronounced at: (i) shorter incubation times; and (ii) at low concentrations of gallium (approximately 50 microg/ml) (p < 0.0006). Additional studies showed that NP-mediated Ga delivery was not dependent on transferrin receptor uptake mechanism (p > 0.13) suggesting the potential in overcoming gallium resistance in some tumors. In general, preparation of stable and biocompatible NPs that facilitated Ga tumor uptake and antitumor effects could be effective in gallium-based cancer therapy.

  19. Interactions of Zircaloy Cladding with Gallium: Final Report

    SciTech Connect

    D.F. Wilson; E.T. Manneschmidt; J.F. King; J.P. Strizak; J.R. DiStefano

    1998-09-01

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fhel, on cladding material performance. Three previous repmts"3 identified several compatibility issues relating to the presence of gallium in MOX fuel and its possible reaction with fiel cladding. Gallium initially present in weapons-grade (WG) plutonium is largely removed during processing to produce MOX fhel. After blending the plutonium with uranium, only 1 to 10 ppm gallium is expected in the sintered MOX fuel. Gallium present as gallium oxide (G~OJ could be evolved as the suboxide (G~O). Migration of the evolved G~O and diffusion of gallium in the MOX matrix along thermal gradients could lead to locally higher concentrations of G~03. Thus, while an extremely low concentration of gallium in MOX fiel almost ensures a lack of significant interaction of gallium whh Zircaloy fhel cladding, there remains a small probability that corrosion effects will not be negligible. General corrosion in the form of surface alloying resulting from formation of intermetallic compounds between Zircaloy and gallium should be ma& limited and, therefore, superficial because of the expected low ratio of gallium to the surface area or volume of the Zircaloy cladding. Although the expected concentration of gallium is low and there is very limited volubility of gallium in zirconium, especially at temperatures below 700 "C,4 grain boundary penetration and liquid metal embrittlement (LME) are forms of localized corrosion that were also considered. One fuel system darnage mechanism, pellet clad interaction, has led to some failure of the Zircaloy cladding in light-water reactors (LWRS

  20. Antigenic Properties and Processing Requirements of 65-Kilodalton Mannoprotein, a Major Antigen Target of Anti-Candida Human T-Cell Response, as Disclosed by Specific Human T-Cell Clones

    PubMed Central

    Nisini, Roberto; Romagnoli, Giulia; Gomez, Maria Jesus; La Valle, Roberto; Torosantucci, Antonella; Mariotti, Sabrina; Teloni, Raffaela; Cassone, Antonio

    2001-01-01

    T-cell-mediated immunity is known to play a central role in the host response to Candida albicans. T-cell clones are useful tools for the exact identification of fungal T-cell epitopes and the processing requirements of C. albicans antigens. We isolated human T-cell clones from an HLA-DRB1*1101 healthy donor by using an antigenic extract (MP-F2) of the fungus. Specific clones were T-cell receptor α/β and CD4+/CD8− and showed a T-helper type 1 cytokine profile (production of gamma interferon and not interleukin-4). The large majority of these clones recognized both the natural (highly glycosylated) and the recombinant (nonglycosylated) 65-kDa mannoprotein (MP65), an MP-F2 minor constituent that was confirmed to be an immunodominant antigen of the human T-cell response. Surprisingly, most of the clones recognized two synthetic peptides of different MP65 regions. However, the peptides shared the amino acid motif IXSXIXXL, which may be envisaged as a motif sequence representing the minimal epitope recognized by these clones. Three clones recognized natural and pronase-treated MP65 but did not detect nonglycosylated, recombinant MP65 or the peptides, suggesting a possible role for polysaccharides in T-cell recognition of C. albicans. Finally, lymphoblastoid B-cell lines were efficient antigen-presenting cells (APC) for recombinant MP65 and peptides but failed to present natural, glycosylated antigens, suggesting that nonprofessional APC might be defective in processing highly glycosylated yeast proteins. In conclusion, this study provides the first characterization of C. albicans-specific human T-cell clones and provides new clues for the definition of the cellular immune response against C. albicans. PMID:11349037

  1. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    NASA Astrophysics Data System (ADS)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  2. Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS.

    PubMed

    Torrance, Keith W; Keenan, Helen E; Hursthouse, Andrew S; Stirling, David

    2010-01-01

    The chemistry of semiconductor wafer processing liquid waste, contaminated by heavy metals, was investigated to determine arsenic content. Arsenic and gallium concentrations were determined for waste slurries collected from gallium arsenide (GaAs) wafer processing at three industrial sources and compared to slurries prepared under laboratory conditions. The arsenic and gallium content of waste slurries was analyzed using inductively coupled plasma mass-spectrometry (ICP-MS) and it is reported that the arsenic content of the waste streams was related to the wafer thinning process, with slurries from wafer polishing having the highest dissolved arsenic content at over 1,900 mgL(-1). Lapping slurries had much lower dissolved arsenic (< 90 mgL(-1)) content, but higher particulate contents. It is demonstrated that significant percentage of GaAs becomes soluble during wafer lapping. Grinding slurries had the lowest dissolved arsenic content at 15 mgL(-1). All three waste streams are classified as hazardous waste, based on their solids content and dissolved arsenic levels and treatment is required before discharge or disposal. It is calculated that as much as 93% of material is discarded through the entire GaAs device manufacturing process, with limited recycling. Although gallium can be economically recovered from waste slurries, there is little incentive to recover arsenic, which is mostly landfilled. Options for treating GaAs processing waste streams are reviewed and some recommendations made for handling the waste. Therefore, although the quantities of hazardous waste generated are miniscule in comparison to other industries, sustainable manufacturing practices are needed to minimize the environmental impact of GaAs semiconductor device fabrication.

  3. DNA detection using plasmonic enhanced near-infrared photoluminescence of gallium arsenide.

    PubMed

    Tang, Longhua; Chun, Ik Su; Wang, Zidong; Li, Jinghong; Li, Xiuling; Lu, Yi

    2013-10-15

    Efficient near-infrared detection of specific DNA with single nucleotide polymorphism selectivity is important for diagnostics and biomedical research. Herein, we report the use of gallium arsenide (GaAs) as a sensing platform for probing DNA immobilization and targeting DNA hybridization, resulting in ∼8-fold enhanced GaAs photoluminescence (PL) at ∼875 nm. The new signal amplification strategy, further coupled with the plasmonic effect of Au nanoparticles, is capable of detecting DNA molecules with a detection limit of 0.8 pM and selectivity against single base mismatches. Such an ultrasensitive near-infrared sensor can find a wide range of biochemical and biomedical applications.

  4. The dimeric nature of bonding in gallium: from small clusters to the α-gallium phase.

    PubMed

    Tonner, Ralf; Gaston, Nicola

    2014-11-28

    We consider the structural similarity of small gallium clusters to the bulk structure of α-gallium, which has been previously described as a molecular metal, via density functional theory-based computations. Previous calculations have shown that the tetramer, the hexamer, and the octamer of gallium are all structurally similar to the α-phase. We perform an analysis of the bonding in these clusters in terms of the molecular orbitals and atoms in molecules description in order to assess whether we can see similarities at these sizes to the bonding pattern, which is ascribed to the co-existence of covalent and metallic bonding in the bulk. The singlet Ga4 and Ga8 clusters can be constructed in a singlet ground state from the Ga-dimers in the first excited triplet state of the Ga2-molecule, the (3)Σg(-) state. Molecular orbital (MO) analysis confirms that the dimer is an essential building block of these small clusters. Comparison of the AIM characteristics of the bonds within the clusters to the bonds in the bulk α-phase supports the identification of the covalent bond in the bulk as related to the (3)Σg(-) state of the dimer.

  5. Computer simulation of radiation damage in gallium arsenide

    NASA Technical Reports Server (NTRS)

    Stith, John J.; Davenport, James C.; Copeland, Randolph L.

    1989-01-01

    A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

  6. Gallium accumulation in early pulmonary Pneumocystis carinii infection

    SciTech Connect

    Stevens, D.A.; Allegra, J.C.

    1986-09-01

    The accumulation of gallium 67 citrate in pulmonary Pneumocystis carinii is well known. The sensitivity of gallium uptake in detecting early inflammatory processes, even when conventional roentgenograms are normal, would seem to make it possible in immunocompromised patients to make a presumptive diagnosis of this serious infection early in its course without using invasive techniques to demonstrate the organism. However, the presence of gallium uptake in radiation pneumonitis, pulmonary drug toxicity, and other processes that also occur in this group limit its usefulness. In our two patients--a young woman with Hodgkin's disease and an elderly woman with small cell lung cancer--this technique proved helpful. Although the latter patient was successfully treated empirically, such empiric treatment should be reserved for patients unable or unwilling to undergo invasive tests. Pulmonary gallium uptake in patients with respiratory symptoms, even with a normal chest film, should prompt attempts to directly demonstrate the organism.

  7. Preliminary Experimental Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    A low-energy gallium plasma source is used to perform a spatially and temporally broad spectroscopic survey in the 220-520 nm range. Neutral, singly, and doubly ionized gallium are present in a 20 J, 1.8 kA (peak) arc discharge operating with a central cathode. When the polarity of the inner electrode is reversed the discharge current and arc voltage waveforms remain similar. Utilizing a central anode configuration, multiple Ga lines are absent in the 270-340 nm range. In addition, neutral and singly ionized Fe spectral lines are present, indicating erosion of the outer electrode. With graphite present on the insulator to facilitate breakdown, line emission from the gallium species is further reduced and while emissions from singly and doubly ionized carbon atoms and molecular carbon (C2) radicals are observed. These data indicate that a significant fraction of energy is shifted from the gallium and deposited into the various carbon species.

  8. Ellipsometric study of silicon nitride on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.

    1982-01-01

    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  9. Gallium arsenide pilot line for high performance components

    NASA Astrophysics Data System (ADS)

    1990-01-01

    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  10. Damage development of gallium nitride under plasma exposure

    NASA Astrophysics Data System (ADS)

    Ogawa, Daisuke; Banno, Yoshitsugu; Nakano, Yoshitaka; Nakamura, Keiji

    2016-09-01

    Plasma damage has been focused on since 1990s. In this era, this issue was manly targeted onto silicon-based semiconductors. However, since the gallium nitride (GaN) was paid attentions to after blue LEDs, they start to consider the damages given to GaN as well. We have so far utilized photoluminescence (PL) emission from the surface of GaN film to monitor the evolution of damage given by plasma exposure. This measurement gives us clues how plasma exposure changed intermediate electronical states in the film without taking the film out of the chamber. First of all, we analyzed the development of damage given by argon plasma, which is one of the most fundamental plasma to analyze. Argon plasma is responsible to give only physical damages over a GaN film. Our PL measurements showed a significant decrease within approximately 10 seconds after the plasma exposure started. This means that ions and radiations created from the plasma gives significant damages to the GaN film even short period of time. Chlorine-related gas is normally utilized for chemical etching. Chlorine species realize continuous damage layer removals, but some reports already mentioned that the processed device has difference electrical properties after the plasma exposure. In this presentation, we will show what happens to GaN film after the plasma exposure in terms of crystal structure and impurities of GaN, by connecting PL emission and ex-situ measurements.

  11. Measurement of the solar neutrino capture rate with gallium metal, part III

    SciTech Connect

    Elliott, Steven Ray

    2008-01-01

    The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in December 1989. Measurements have continued with only a few brief interruptions since that time. In this article we present the experimental improvements in SAGE since its last published data summary in December 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through December 2007 gives a capture rate of solar neutrinos with energy more than 233 keY of 65.4{sup +3.1}{sub 3.0} (stat) {sup +2.6}{sub -2.8} (syst) SNU. The weighted average of the results of all three Ga solar neUlrino experiments, SAGE, Gallex, and GNO, is now 66.1 {+-} 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced {sup 37}Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior {sup 51}Cr neutrino-source experiments with Ga, is 0.88 {+-} 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in {sup 71}Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63--67 SNU with an uncertainly of about 5%, in good agreement with experiment. We derive the current value of the pp neutrino flux produced in the Sun to be {phi}{sup {circle_dot}}{sub pp} = (6.1 {+-} 0.8) x 10{sup 10}/(cm{sup 2} s), which agrees well with the flux predicted by the standard solar model. Finally, we make several tests and show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

  12. Complexometric determination of gallium with calcein blue as indicator

    USGS Publications Warehouse

    Elsheimer, H.N.

    1967-01-01

    A metalfluorechromic indicator, Calcein Blue, has been used for the back-titration of milligram amounts of EDTA in presence of gallium complexes. The indicator was used in conjunction with an ultraviolet titration assembly equipped with a cadmium sulphide detector cell and a microammeter for enhanced end-point detection. The result is a convenient and rapid method with an accuracy approaching 0.1 % and a relative standard deviation of about 0.4% for 10 mg of gallium. ?? 1967.

  13. Generator for ionic gallium-68 based on column chromatography

    DOEpatents

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  14. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  15. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  16. Direct Band Gap Wurtzite Gallium Phosphide Nanowires

    PubMed Central

    2013-01-01

    The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

  17. Producing gallium arsenide crystals in space

    NASA Technical Reports Server (NTRS)

    Randolph, R. L.

    1984-01-01

    The production of high quality crystals in space is a promising near-term application of microgravity processing. Gallium arsenide is the selected material for initial commercial production because of its inherent superior electronic properties, wide range of market applications, and broad base of on-going device development effort. Plausible product prices can absorb the high cost of space transportation for the initial flights provided by the Space Transportation System. The next step for bulk crystal growth, beyond the STS, is planned to come later with the use of free flyers or a space station, where real benefits are foreseen. The use of these vehicles, together with refinement and increasing automation of space-based crystal growth factories, will bring down costs and will support growing demands for high quality GaAs and other specialty electronic and electro-optical crystals grown in space.

  18. The interaction of gold with gallium arsenide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

  19. Radiation damage of gallium arsenide production cells

    NASA Technical Reports Server (NTRS)

    Mardesich, N.; Garlick, G. F. J.

    1987-01-01

    High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

  20. Contact formation in gallium arsenide solar cells

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1988-01-01

    Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

  1. Cathodoluminescence spectra of gallium nitride nanorods

    PubMed Central

    2011-01-01

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio. PMID:22168896

  2. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8 × 10{sup 5} and mode volumes <10(λ/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0 × 10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5 μm and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2π∼30 kHz for the fundamental mechanical radial breathing mode at 488 MHz.

  3. Gallium Arsenide solar cell radiation damage experiment

    NASA Technical Reports Server (NTRS)

    Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

    1991-01-01

    Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

  4. Gallium arsenide solar array subsystem study

    NASA Technical Reports Server (NTRS)

    Miller, F. Q.

    1982-01-01

    The effects on life cycle costs of a number of technology areas are examined for a gallium arsenide space solar array. Four specific configurations were addressed: (1) a 250 KWe LEO mission - planer array; (2) a 250 KWe LEO mission - with concentration; (3) a 50 KWe GEO mission planer array; (4) a 50 KWe GEO mission - with concentration. For each configuration, a baseline system conceptual design was developed and the life cycle costs estimated in detail. The baseline system requirements and design technologies were then varied and their relationships to life cycle costs quantified. For example, the thermal characteristics of the baseline design are determined by the array materials and masses. The thermal characteristics in turn determine configuration, performance, and hence life cycle costs.

  5. Gallium arsenide - Solar panel assembly technology

    NASA Astrophysics Data System (ADS)

    Zemmrich, D.; Mardesich, N.; Macfarlane, B.; Loo, R.

    Gallium arsenide (GaAs) solar cell devices are maturing at 18 percent AM0 efficiencies for liquid phase epitaxy (LPE) technology, and efforts must be intensified placing necessary focus on the development of panel assembly techniques, and ultimately panel manufacturing methods capable of maintaining these high efficiencies for on-panel operation. Key problems and solutions are described which were experienced during the assembly of flight qualified solar panels using Spectrolab's mature (silicon) panel manufacturing processes for assembly of LPE GaAs solar cells. These cells were produced by Hughes Malibu (supplied by the U.S. Air Force WPAFB) ranging in efficiency from 15 to 17 percent, air mass zero (AM0) 28 C. Cell assembly methods for coverglass installation, submodule, and circuit soldering, as well as panel bonding are discussed. The LIPS II satellite, using a GaAs solar cell panel was successfully launched in 1983.

  6. Cathodoluminescence spectra of gallium nitride nanorods.

    PubMed

    Tsai, Chia-Chang; Li, Guan-Hua; Lin, Yuan-Ting; Chang, Ching-Wen; Wadekar, Paritosh; Chen, Quark Yung-Sung; Rigutti, Lorenzo; Tchernycheva, Maria; Julien, François Henri; Tu, Li-Wei

    2011-12-14

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio.

  7. Thickness dependent thermal conductivity of gallium nitride

    NASA Astrophysics Data System (ADS)

    Ziade, Elbara; Yang, Jia; Brummer, Gordie; Nothern, Denis; Moustakas, Theodore; Schmidt, Aaron J.

    2017-01-01

    As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15-1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300 < T < 600 K and use a phonon transport model to explain the thermal conductivity in this film.

  8. FS65 Disposition Option Report

    SciTech Connect

    Wenz, Tracy R.

    2015-09-25

    This report outlines the options for dispositioning the MOX fuel stored in FS65 containers at LANL. Additional discussion regarding the support equipment for loading and unloading the FS65 transport containers is included at the end of the report.

  9. STS-65 Onboard Photograph

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Astronaut Chiaki Mukai conducts the Lower Body Negative Pressure (LBNP) experiment inside the International Microgravity Laboratory-2 (IML-2) mission science module. Dr. Chiaki Mukai is one of the National Space Development Agency of Japan (NASDA) astronauts chosen by NASA as a payload specialist (PS). She was the second NASDA PS who flew aboard the Space Shuttle, and was the first female astronaut in Asia. When humans go into space, the lack of gravity causes many changes in the body. One change is that fluids normally kept in the lower body by gravity shift upward to the head and chest. This is why astronauts' faces appear chubby or puffy. The change in fluid volume also affects the heart. The reduced fluid volume means that there is less blood to circulate through the body. Crewmembers may experience reduced blood flow to the brain when returning to Earth. This leads to fainting or near-fainting episodes. With the use of the LBNP to simulate the pull of gravity in conjunction with fluids, salt tablets can recondition the cardiovascular system. This treatment, called 'soak,' is effective up to 24 hours. The LBNP uses a three-layer collapsible cylinder that seals around the crewmember's waist which simulates the effects of gravity and helps pull fluids into the lower body. The data collected will be analyzed to determine physiological changes in the crewmembers and effectiveness of the treatment. The IML-2 was the second in a series of Spacelab flights designed by the international science community to conduct research in a microgravity environment Managed by the Marshall Space Flight Center, the IML-2 was launched on July 8, 1994 aboard the STS-65 Space Shuttle Orbiter Columbia mission.

  10. Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces

    SciTech Connect

    Franciosi, A.

    1989-02-21

    A method is described for promoting oxidation of a silicon or gallium arsenide surface comprising: depositing a ytterbium overlayer on the silicon or gallium arsenide surface prior to the oxidation of the surface.

  11. Combination of three metals for the treatment of cancer: gallium, rhenium and platinum. 1. Determination of the optimal schedule of treatment.

    PubMed

    Collery, Philippe; Mohsen, Ahmed; Kermagoret, Anthony; D'Angelo, Jean; Morgant, Georges; Desmaele, Didier; Tomas, Alain; Collery, Thomas; Wei, Ming; Badawi, Abdelfattah

    2012-07-01

    Platinum is well known for its anticancer activity, firstly used as cis-diaminedichloroplatinum (II) (CDDP), with a wide range of activity. Its main mechanism of action involves its binding to DNA. Gallium, another metal, has also demonstrated apoptotic effects on malignant cells, but through interaction with targets other than DNA, such as the membrane, cytoskeleton and proteasome, and on enzyme activities. An antitumor synergism between CDDP and both gallium and rhenium compounds has been demonstrated. For these reasons, we proposed to combine these three metals and to determine at which doses each compound could be administered without major toxicity. CDDP, tetrakis(1-octanol) tris(5-aminosalicylate)gallium(III), and a diseleno-ether rhenium(I) complex were used in this experimental study in breast cancer MCF-7 tumor-bearing mice. CDDP was administered intraperitoneally (i.p.) twice a week at the dose of 3 mg/kg. Tetrakis(1-octanol) tris(5-aminosalicylate) gallium (III) and rhenium(I) diseleno-ether complexes were administered orally, daily, five days a week for three weeks, at doses ranging from 20 to 100 mg/kg for the gallium compound and from 10 to 50 mg/kg for the rhenium compound. Doses of 10 mg/kg of rhenium(I) diseleno-ether, and 100 mg/kg of the salicylate gallium compound, in combination with CDDP induced a significant decrease of 50% of the tumor volume, by comparison with the control group. In contrast, the decrease of the tumor volume in mice treated by CDDP alone was less than 25%. Changes in the sequence of administration of the three metals will be discussed to improve the therapeutic index.

  12. Gallium Potentiates the Antibacterial Effect of Gentamicin against Francisella tularensis.

    PubMed

    Lindgren, Helena; Sjöstedt, Anders

    2015-10-26

    The reasons why aminoglycosides are bactericidal have not been not fully elucidated, and evidence indicates that the cidal effects are at least partly dependent on iron. We demonstrate that availability of iron markedly affects the susceptibility of the facultative intracellular bacterium Francisella tularensis strain SCHU S4 to the aminoglycoside gentamicin. Specifically, the intracellular depots of iron were inversely correlated to gentamicin susceptibility, whereas the extracellular iron concentrations were directly correlated to the susceptibility. Further proof of the intimate link between iron availability and antibiotic susceptibility were the findings that a ΔfslA mutant, which is defective for siderophore-dependent uptake of ferric iron, showed enhanced gentamicin susceptibility and that a ΔfeoB mutant, which is defective for uptake of ferrous iron, displayed complete growth arrest in the presence of gentamicin. Based on the aforementioned findings, it was hypothesized that gallium could potentiate the effect of gentamicin, since gallium is sequestered by iron uptake systems. The ferrozine assay demonstrated that the presence of gallium inhibited >70% of the iron uptake. Addition of gentamicin and/or gallium to infected bone marrow-derived macrophages showed that both 100 μM gallium and 10 μg/ml of gentamicin inhibited intracellular growth of SCHU S4 and that the combined treatment acted synergistically. Moreover, treatment of F. tularensis-infected mice with gentamicin and gallium showed an additive effect. Collectively, the data demonstrate that SCHU S4 is dependent on iron to minimize the effects of gentamicin and that gallium, by inhibiting the iron uptake, potentiates the bactericidal effect of gentamicin in vitro and in vivo.

  13. Gallium Potentiates the Antibacterial Effect of Gentamicin against Francisella tularensis

    PubMed Central

    Lindgren, Helena

    2015-01-01

    The reasons why aminoglycosides are bactericidal have not been not fully elucidated, and evidence indicates that the cidal effects are at least partly dependent on iron. We demonstrate that availability of iron markedly affects the susceptibility of the facultative intracellular bacterium Francisella tularensis strain SCHU S4 to the aminoglycoside gentamicin. Specifically, the intracellular depots of iron were inversely correlated to gentamicin susceptibility, whereas the extracellular iron concentrations were directly correlated to the susceptibility. Further proof of the intimate link between iron availability and antibiotic susceptibility were the findings that a ΔfslA mutant, which is defective for siderophore-dependent uptake of ferric iron, showed enhanced gentamicin susceptibility and that a ΔfeoB mutant, which is defective for uptake of ferrous iron, displayed complete growth arrest in the presence of gentamicin. Based on the aforementioned findings, it was hypothesized that gallium could potentiate the effect of gentamicin, since gallium is sequestered by iron uptake systems. The ferrozine assay demonstrated that the presence of gallium inhibited >70% of the iron uptake. Addition of gentamicin and/or gallium to infected bone marrow-derived macrophages showed that both 100 μM gallium and 10 μg/ml of gentamicin inhibited intracellular growth of SCHU S4 and that the combined treatment acted synergistically. Moreover, treatment of F. tularensis-infected mice with gentamicin and gallium showed an additive effect. Collectively, the data demonstrate that SCHU S4 is dependent on iron to minimize the effects of gentamicin and that gallium, by inhibiting the iron uptake, potentiates the bactericidal effect of gentamicin in vitro and in vivo. PMID:26503658

  14. Gallium a unique anti-resorptive agent in bone: Preclinical studies on its mechanisms of action

    SciTech Connect

    Bockman, R.; Adelman, R.; Donnelly, R.; Brody, L.; Warrell, R. ); Jones, K.W. )

    1990-01-01

    The discovery of gallium as a new and unique agent for the treatment of metabolic bone disorders was in part fortuitous. Gallium is an exciting new therapeutic agent for the treatment of pathologic states characterized by accelerated bone resorption. Compared to other therapeutic metal compounds containing platinum or germanium, gallium affects its antiresorptive action without any evidence of a cytotoxic effect on bone cells. Gallium is unique amongst all therapeutically available antiresorptive agents in that it favors bone formation. 18 refs., 1 fig.

  15. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOEpatents

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  16. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOEpatents

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  17. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  18. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  19. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  20. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  1. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart...

  2. Gallium nitrate inhibits alkaline phosphatase activity in a differentiating mesenchymal cell culture.

    PubMed

    Boskey, A L; Ziecheck, W; Guidon, P; Doty, S B

    1993-02-01

    The effect of gallium nitrate on alkaline phosphatase activity in a differentiating chick limb-bud mesenchymal cell culture was monitored in order to gain insight into the observation that rachitic rats treated with gallium nitrate failed to show the expected increase in serum alkaline phosphatase activity. Cultures maintained in media containing 15 microM gallium nitrate showed drastically decreased alkaline phosphatase activities in the absence of significant alterations in total protein synthesis and DNA content. However, addition of 15 microM gallium nitrate to cultures 18 h before assay for alkaline phosphatase activity had little effect. At the light microscopic and electron microscopic level, gallium-treated cultures differed morphologically from gallium-free cultures: with gallium present, there were fewer hypertrophic chondrocytes and cartilage nodules were flatter and further apart. Because of altered morphology, staining with an antibody against chick cartilage alkaline phosphatase appeared less extensive; however, all nodules stained equivalently relative to gallium-free controls. Histochemical staining for alkaline phosphatase activity was negative in gallium-treated cultures, demonstrating that the alkaline phosphatase protein present was not active. The defective alkaline phosphatase activity in cultures maintained in the presence of gallium was also evidenced when cultures were supplemented with the alkaline phosphatase substrate, beta-glycerophosphate (beta GP). The data presented suggest that gallium inhibits alkaline phosphatase activity in this culture system and that gallium causes alterations in the differentiation of mesenchymal cells into hypertrophic chondrocytes.

  3. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

    DTIC Science & Technology

    2011-12-01

    ELECTROLUMINESCENCE STUDIES ON LONG WAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE THESIS John C...11-46 ELECTROLUMINESCENCE STUDIES ON LONGWAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE THESIS...58 1 ELECTROLUMINESCENCE STUDIES ON LONGWAVELENGTH INDIUM ARSENIDE QUANTUM DOT MICROCAVITIES GROWN ON GALLIUM ARSENIDE I

  4. Continuously tunable, 6{endash}14 {mu}m silver-gallium selenide optical parametric oscillator pumped at 1.57 {mu}m

    SciTech Connect

    Chandra, S.; Allik, T.H.; Catella, G.; Utano, R.; Hutchinson, J.A.

    1997-08-01

    An angle tuned silver gallium selenide (AgGaSe{sub 2}) optical parametric oscillator (OPO), pumped by the fixed wavelength 1.57 {mu}m output of a noncritically phase-matched KTiOPO{sub 4} OPO, yielded radiation continuously tunable from 6 to 14 {mu}m. Energies of up to 1.2 mJ/pulse with bandwidths of {approximately}5cm{sup {minus}1} (full width at half-maximum) were obtained using a 6.5{times}6.5{times}35.3mm long, type I AgGaSe{sub 2} crystal. {copyright} {ital 1997 American Institute of Physics.}

  5. Gallium based low-interaction anions

    DOEpatents

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  6. Preliminary Spectroscopic Measurements for a Gallium Electromagnetic (GEM) Thruster

    NASA Technical Reports Server (NTRS)

    Thomas, Robert E.; Burton, Rodney L.; Glumac, Nick G.; Polzin, Kurt A.

    2007-01-01

    As a propellant option for electromagnetic thrusters, liquid ,gallium appears to have several advantages relative to other propellants. The merits of using gallium in an electromagnetic thruster (EMT) are discussed and estimates of discharge current levels and mass flow rates yielding efficient operation are given. The gallium atomic weight of 70 predicts high efficiency in the 1500-2000 s specific impulse range, making it ideal for higher-thrust, near-Earth missions. A spatially and temporally broad spectroscopic survey in the 220-520 nm range is used to determine which species are present in the plasma and estimate electron temperature. The spectra show that neutral, singly, and doubly ionized gallium species are present in a 20 J, 1.8 kA (peak) are discharge. With graphite present on the insulator to facilitate breakdown, singly and doubly ionized carbon atoms are also present, and emission is observed from molecular carbon (CZ) radicals. A determination of the electron temperature was attempted using relative emission line data, and while the spatially and temporally averaged, spectra don't fit well to single temperatures, the data and presence of doubly ionized gallium are consistent with distributions in the 1-3 eV range.

  7. Health screening - men age 65 and older

    MedlinePlus

    Health maintenance visit - men - over age 65; Physical exam - men - over age 65; Yearly exam - men - over age 65; Checkup - men - over age 65; Men's health - over age 65; Preventive care exam - men - over ...

  8. Health screening - women - over age 65

    MedlinePlus

    Health maintenance visit - women - over age 65; Physical exam - women - over age 65; Yearly exam - women - over age 65; Checkup - women - over age 65; Women's health - over age 65; Preventive care exam - women - over ...

  9. Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles.

    PubMed

    Knight, Mark W; Coenen, Toon; Yang, Yang; Brenny, Benjamin J M; Losurdo, Maria; Brown, April S; Everitt, Henry O; Polman, Albert

    2015-02-24

    Gallium has recently been demonstrated as a phase-change plasmonic material offering UV tunability, facile synthesis, and a remarkable stability due to its thin, self-terminating native oxide. However, the dense irregular nanoparticle (NP) ensembles fabricated by molecular-beam epitaxy make optical measurements of individual particles challenging. Here we employ hyperspectral cathodoluminescence (CL) microscopy to characterize the response of single Ga NPs of various sizes within an irregular ensemble by spatially and spectrally resolving both in-plane and out-of-plane plasmonic modes. These modes, which include hybridized dipolar and higher-order terms due to phase retardation and substrate interactions, are correlated with finite difference time domain (FDTD) electrodynamics calculations that consider the Ga NP contact angle, substrate, and native Ga/Si surface oxidation. This study experimentally confirms previous theoretical predictions of plasmonic size-tunability in single Ga NPs and demonstrates that the plasmonic modes of interacting Ga nanoparticles can hybridize to produce strong hot spots in the ultraviolet. The controlled, robust UV plasmonic resonances of gallium nanoparticles are applicable to energy- and phase-specific applications such as optical memory, environmental remediation, and simultaneous fluorescence and surface-enhanced Raman spectroscopies.

  10. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.

    PubMed

    Alam, Khan; Foley, Andrew; Smith, Arthur R

    2015-03-11

    In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

  11. Gallium nitride photocathodes for imaging photon counters

    NASA Astrophysics Data System (ADS)

    Siegmund, Oswald H. W.; Hull, Jeffrey S.; Tremsin, Anton S.; McPhate, Jason B.; Dabiran, Amir M.

    2010-07-01

    Gallium nitride opaque and semitransparent photocathodes provide high ultraviolet quantum efficiencies from 100 nm to a long wavelength cutoff at ~380 nm. P (Mg) doped GaN photocathode layers ~100 nm thick with a barrier layer of AlN (22 nm) on sapphire substrates also have low out of band response, and are highly robust. Opaque GaN photocathodes are relatively easy to optimize, and consistently provide high quantum efficiency (70% at 120 nm) provided the surface cleaning and activation (Cs) processes are well established. We have used two dimensional photon counting imaging microchannel plate detectors, with an active area of 25 mm diameter, to investigate the imaging characteristics of semitransparent GaN photocathodes. These can be produced with high (20%) efficiency, but the thickness and conductivity of the GaN must be carefully optimized. High spatial resolution of ~50 μm with low intrinsic background (~7 events sec-1 cm-2) and good image uniformity have been achieved. Selectively patterned deposited GaN photocathodes have also been used to allow quick diagnostics of optimization parameters. GaN photocathodes of both types show great promise for future detector applications in ultraviolet Astrophysical instruments.

  12. Gallium nitride photocathode development for imaging detectors

    NASA Astrophysics Data System (ADS)

    Siegmund, Oswald H. W.; Tremsin, Anton S.; Vallerga, John V.; McPhate, Jason B.; Hull, Jeffrey S.; Malloy, James; Dabiran, Amir M.

    2008-07-01

    Recent progress in Gallium Nitride (GaN, AlGaN, InGaN) photocathodes show great promise for future detector applications in Astrophysical instruments. Efforts with opaque GaN photocathodes have yielded quantum efficiencies up to 70% at 120 nm and cutoffs at ~380 nm, with low out of band response, and high stability. Previous work with semitransparent GaN photocathodes produced relatively low quantum efficiencies in transmission mode (4%). We now have preliminary data showing that quantum efficiency improvements of a factor of 5 can be achieved. We have also performed two dimensional photon counting imaging with 25mm diameter semitransparent GaN photocathodes in close proximity to a microchannel plate stack and a cross delay line readout. The imaging performance achieves spatial resolution of ~50μm with low intrinsic background (below 1 event sec-1 cm-2) and reasonable image uniformity. GaN photocathodes with significant quantum efficiency have been fabricated on ceramic MCP substrates. In addition GaN has been deposited at low temperature onto quartz substrates, also achieving substantial quantum efficiency.

  13. Evaluation of the carcinogenicity of gallium arsenide.

    PubMed

    Bomhard, Ernst M; Gelbke, Heinz-Peter; Schenk, Hermann; Williams, Gary M; Cohen, Samuel M

    2013-05-01

    Gallium arsenide (GaAs) is an important semiconductor material. In 2-year inhalation studies, GaAs increased the incidence of lung tumors in female rats, but not in male rats or male and female mice. Alveolar proteinosis followed by chronic active inflammation was the predominant non-neoplastic pulmonary findings. IARC classified GaAs as carcinogenic to humans (group 1) based on the assumption that As and Ga ions are bioavailable. The European Chemical Agency Risk Assessment Committee concluded that GaAs should be classified into Carcinogenicity Category 1B (presumed to have carcinogenic potential for humans; ECHA). We evaluate whether these classifications are justified. Physico-chemical properties of GaAs particles and the degree of mechanical treatment are critical in this evaluation. The available data on mode of action (MOA), genotoxicity and bioavailability do not support the contribution of As or Ga ions to the lung tumors in female rats. Most toxicological studies utilized small particles produced by strong mechanical treatment, destroying the crystalline structure. The resulting amorphous GaAs is not relevant to crystalline GaAs at production and processing sites. The likely tumorigenic MOA is lung toxicity related to particulate-induced inflammation and increased proliferation. It is concluded that there is no evidence for a primary carcinogenic effect of GaAs.

  14. Gallium-based avalanche photodiode optical crosstalk

    NASA Astrophysics Data System (ADS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  15. Gallium nitride T-ray transmission characteristics

    NASA Astrophysics Data System (ADS)

    Ferguson, Bradley; Mickan, Samuel P.; Hubbard, Seth; Pavlidis, Dimitris; Abbott, Derek

    2001-11-01

    T-ray imaging and spectroscopy both exploit the terahertz (THz) region of the spectrum. This gives rise to very promising industrial and biomedical applications, where non-invasive and sensitive identification of a substance is achievable, through a material's distinct absorption features in the THz band. Present T-ray systems are limited by low output power, and the race is now on to find more efficient THz emitters. We discuss the feasibility of a novel high-power gallium nitride emitter for terahertz generation. This paper details the advantages of such an emitter, primarily by virtue of its high-voltage capability, and evaluates the benefits of sapphire and silicon carbide substrates. The far-infrared transmission spectra for thin samples of GaN, sapphire and SiC are reported. A high-power THz emitter, that operates at room temperature and is potentially low-cost will open up a host of new possibilities and applications. The central result in this paper demonstrates that sapphire is the better choice over SiC, for the GaN supporting substrate, as we show that it has superior THz transmission characteristics.

  16. IBIC analysis of gallium arsenide Schottky diodes

    NASA Astrophysics Data System (ADS)

    Vittone, E.; Fizzotti, F.; Mirri, K.; Gargioni, E.; Polesello, P.; LoGiudice, A.; Manfredotti, C.; Galassini, S.; Rossi, P.; Vanni, P.; Nava, F.

    1999-10-01

    Semi-insulating (SI) gallium arsenide (GaAs) devices operating as a reverse biased Schottky diode offer an attractive choice as radiation detector at room temperature both in high energy physics experiments and as X-ray image sensors. However, SI GaAs devices contain a high concentration of traps, which decreases the charge collection efficiency (cce), and affects the energy resolution of such detectors working as nuclear spectrometers. In this paper we present a detailed investigation of the spatial uniformity of the cce carried out by analysing ion beam induced charge (IBIC) space maps obtained by scanning a focused 2 MeV proton microbeam on a SI n-GaAs Schottky diode. The microbeam irradiated both the front (Schottky) and back (ohmic) contacts in order to evaluate the transport properties of both electrons and holes generated by ionisation. The IBIC space maps show a clear non-uniformity of the cce. The poor energy resolution previously observed in such detectors working as alpha particle spectrometers is ascribed to the presence of two different "phases" in the material, which produce two distinct collection efficiency spectra. Such "phases" show different behaviour as a function of the applied bias voltage which is most likely due to the different electric field dependence of the relevant capture cross sections of the trapping centres for both charge carriers.

  17. Electrical characterization of magnesium implanted gallium nitride

    NASA Astrophysics Data System (ADS)

    Krtschil, A.; Kielburg, A.; Witte, H.; Christen, J.; Krost, A.; Wenzel, A.; Rauschenbach, B.

    2002-01-01

    Gallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016cm-2. The implantation induced defect states were investigated by temperature dependent conductivity (TDC) as well as by thermal and optical admittance spectroscopy (TAS, OAS) measurements. Dominant carrier emissions having thermal activation energies between 360 and 800 meV were found in TAS and TDC. These states are assigned to implantation induced electron traps since they do not appear in the nonimplanted reference sample. Defect states with similar transition energies were also observed in OAS resulting in an enhancement of defect-to-band transitions in the near band-gap region around 3.45 eV, in the blue band around 3.0 eV, as well as in the midgap range for photon energies between 2.5 and 1.80 eV, respectively. In addition, new transitions were found at 2.1 and 1.95 eV. Furthermore, transitions from implantation induced shallow states were observed, i.e., the magnesium acceptor as well as a new donor level at about 70 meV, tentatively discussed as nitrogen vacancy. The critical ion dose for amorphization was determined to be between 5×1015 and 1×1016Mg+ cm-2 using x-ray diffraction.

  18. Funneling electron beams from gallium arsenide photocathodes

    NASA Astrophysics Data System (ADS)

    Rahman, Omer Habib

    Gallium Arsenide (GaAs) is the most widely used source of polarized electrons around the world. Electrons are extracted from a GaAs surface, terminated by a cesium-oxygen layer. The electrons are accelerated to form a beam by a DC electric field. This beam can ionize residual gas in the chamber, and the DC field accelerates the resulting ions into the cathode surface, damaging the Cesium- Oxygen layer. This process, called Ion Back Bombardment, is the dominant mechanism for limiting photocathode lifetime. As a result, high average current operation yields charge lifetimes too low to be used in a collider design. One idea to extend the charge lifetime is to funnel the beams from multiple cathodes using a rotating magnetic field-if operation of one cathode does not affect the operation of another cathode in the same chamber, then the source's lifetime can be extended by simply adding more cathodes. This dissertation presents the design, construction and commissioning of a unique electron gun capable of operating twenty cathodes. Results of funneling two electron beams with a rotating magnetic field are also presented. For average currents at 175 nA and 350 nA, the charge lifetimes for individual cathodes and two-cathode operation were measured, showing that the charge lifetime for two beam funneling is the sum of the individual ion back bombardment charge lifetimes. The addition of charge lifetime implies that beam funneling can be used to increase charge lifetime by an order of magnitude.

  19. Gallium Nitride Based Logpile Photonic Crystal

    SciTech Connect

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J.; Wang, George T.; Fischer, Arthur J.

    2011-11-09

    A nine-layer logpile three-dimensional photonic crystal (3DPC) is demonstrated composed of single crystalline gallium nitride (GaN) nanorods, ~ 100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a ''line-defect'' cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25–30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride-based optoelectronic devices.

  20. Gallium nitride based logpile photonic crystals.

    PubMed

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J

    2011-11-09

    We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

  1. Determination of gallium originated from a gallium-based anticancer drug in human urine using ICP-MS.

    PubMed

    Filatova, Darya G; Seregina, Irina F; Foteeva, Lidia S; Pukhov, Vladimir V; Timerbaev, Andrei R; Bolshov, Mikhail A

    2011-05-01

    Urine analysis gives an insight into the excretion of the administered drug which is related to its reactivity and toxicity. In this work, the capability of inductively coupled plasma mass spectrometry (ICP-MS) to measure ultratrace metal levels was utilized for rapid assaying of gallium originating from the novel gallium anticancer drug, tris(8-quinolinolato)gallium(III) (GaQ(3)), in human urine. Sample dilution with 1% (v/v) HNO(3) as the only required pre-treatment was shown to prevent contamination of the sample introduction system and to reduce polyatomic interferences from sample components. The origin of the blank signal at masses of gallium isotopes, 71 and 69, was investigated using high-resolution ICP-MS and attributed, respectively, to the formation of (36)Ar(35)Cl(+) and (40)Ar(31)P(+) ions and, tentatively, to a triplet of doubly charged ions of Ba, La, and Ce. The accuracy and precision performance was tested by evaluating a set of parameters for analytical method validation. The developed assay has been applied for the determination of gallium in urine samples spiked with GaQ(3). The achieved recoveries (95-102%) and quantification limit of 0.2 μg L(-1) emphasize the practical applicability of the presented analytical approach to monitor renal elimination of GaQ(3) at all dose levels in clinical trials that are currently in progress.

  2. Antibacterial effect of gallium and silver on Pseudomonas aeruginosa treated with gallium-silver-phosphate-based glasses.

    PubMed

    Valappil, Sabeel P; Higham, Susan M

    2014-01-01

    Gallium and silver incorporated phosphate-based glasses were evaluated for antibacterial effect on the growth of Pseudomonas aeruginosa, which is a leading cause of opportunistic infections. The glasses were produced by conventional melt quenching methods at 1100°C for 1 h. Glass degradation studies were conducted by weight loss method. Disc diffusion assay and cell viability assay displayed statistically significant (p ≤ 0.0005) effect on P. aeruginosa growth which increased with decreasing calcium content in the glasses. The gallium ion release rates (1.83, 0.69 and 0.48 ppm·h(-1)) and silver ion release rates (2.97, 2.84 and 2.47 ppm·h(-1)) were found to account for this variation. Constant depth film fermentor was used to evaluate the anti-biofilm properties of the glasses. Both gallium and silver in the glass contributed to biofilm growth inhibitory effect on P. aeruginosa (up to 2.68 reduction in log 10 values of the viable counts compared with controls). The glasses were found to deliver gallium and silver in a controlled way and exerted cumulative antibacterial action on planktonic and biofilm growth of P. aeruginosa. The antibacterial, especially anti-biofilm, properties of the gallium and silver incorporated phosphate-based glasses make them a potential candidate to combat infections caused by P. aeruginosa.

  3. The Soviet-American gallium experiment at Baksan

    SciTech Connect

    Abazov, A. I.; Abdurashitov, D. N.; Anosov, O. L.; Danshin, S. N.; Eroshkina, L. A.; Faizov, E. L.; Gavrin, V. N.; Kalikhov, A. V.; Knodel, T. V.; Knyshenko, I. I.; Kornoukhov, V. N.; Mezentseva, S. A.; Mirmov, I. N.; Ostrinsky, A. I.; Petukhov, V. V; Pshukov, A. M.; Revzin, N. Ye; Shikhin, A. A.; Slyusareva, Ye. D.; Timofeyev, P. V.; Veretenkin, E. P.; Vermul, V. M.; Yantz, V. E.; Zakharov, Yu.; Zatsepin, G. T.; Zhandarov, V. I.

    1990-01-01

    A gallium solar neutrino detector is sensitive to the full range of the solar neutrino spectrum, including the low-energy neutrinos from the fundamental proton-proton fusion reaction. If neutrino oscillations in the solar interior are responsible for the suppressed {sup 8}B flux measured by the Homestake {sup 37}Cl experiment and the Kamiokande water Cherenkov detector, then a comparison of the gallium, chlorine, and water results may make possible a determination of the neutrino mass difference and mixing angle. A 30-ton gallium detector is currently operating in the Baksan laboratory in the Soviet Union, with a ratio of expected solar signal to measured background (during the first one to two {sup 71}Ge half lives) of approximately one. 28 refs.

  4. Interaction of sodium with tellurium in gallium melts

    SciTech Connect

    Dergacheva, M.B.; Sarsekeeva, R.Zh.; Kozin, L.F.

    1988-09-20

    The purpose of this work was to study interaction of sodium with admixtures of tellurium and to determine the composition and phase state of the intermetallic compounds formed. The investigations were carried out by a potentiometric method with measurement of emf of the concentration cells. Sodium was introduced into the original gallium-tellurium binary alloy by electrolysis. The results of measurements of the emf of the cell were used for plotting potentiometric curves. The emf values found on the horizontal region of the potentiometric were subjected to mathematical analysis for determination of deviations from the regression line of the results of three parallel series of measurement. The emf of concentration cells with a solid electrolyte, based on melts of the gallium-sodium-tellurium ternary system, deviate from the theoretical values at 855 K; this is attributed to formation of the intermetallic compound, sparingly soluble in gallium, the free energy of formation of which is -266 +/- 15 kJ/mole.

  5. Extremely-efficient, miniaturized, long-lived alpha-voltaic power source using liquid gallium

    NASA Technical Reports Server (NTRS)

    Snyder, G. Jeffrey (Inventor); Patel, Jagdishbhai (Inventor); Fleurial, Jean-Pierre (Inventor)

    2004-01-01

    A power source converts .alpha.-particle energy to electricity for use in electrical systems. Liquid gallium or other liquid medium is subjected to .alpha.-particle emissions. Electrons are freed by collision from neutral gallium atoms to provide gallium ions. The electrons migrate to a cathode while the gallium ions migrate to an anode. A current and/or voltage difference then arises between the cathode and anode because of the work function difference of the cathode and anode. Gallium atoms are regenerated by the receiving of electrons from the anode enabling the generation of additional electrons from additional .alpha.-particle collisions.

  6. Magnetostriction and magnetic heterogeneities in iron-gallium.

    PubMed

    Laver, M; Mudivarthi, C; Cullen, J R; Flatau, A B; Chen, W-C; Watson, S M; Wuttig, M

    2010-07-09

    Iron-gallium alloys Fe(1-x)Ga(x) exhibit an exceptional increase in magnetostriction with gallium content. We present small-angle neutron scattering investigations on a Fe(0.81)Ga(0.19) single crystal. We uncover heterogeneities with an average spacing of 15 nm and with magnetizations distinct from the matrix. The moments in and around the heterogeneities are observed to reorient with an applied magnetic field or mechanical strain. We discuss the possible roles played by nanoscale magnetic heterogeneities in the mechanism for magnetostriction in this material.

  7. Magnetostriction and Magnetic Heterogeneities in Iron-Gallium

    SciTech Connect

    Laver, M.; Mudivarthi, C.; Cullen, J. R.; Wuttig, M.; Flatau, A. B.; Chen, W.-C.; Watson, S. M.

    2010-07-09

    Iron-gallium alloys Fe{sub 1-x}Ga{sub x} exhibit an exceptional increase in magnetostriction with gallium content. We present small-angle neutron scattering investigations on a Fe{sub 0.81}Ga{sub 0.19} single crystal. We uncover heterogeneities with an average spacing of 15 nm and with magnetizations distinct from the matrix. The moments in and around the heterogeneities are observed to reorient with an applied magnetic field or mechanical strain. We discuss the possible roles played by nanoscale magnetic heterogeneities in the mechanism for magnetostriction in this material.

  8. Absence of gallium-67 avidity in diffuse pulmonary calcification

    SciTech Connect

    Lecklitner, M.L.; Foster, R.W.

    1985-09-01

    Diffuse pulmonary uptake by bone-seeking radiopharmaceuticals has been reported previously but, in the same patient, would pulmonary uptake of Ga-67 citrate yield clinically meaningful results. A patient with hypercalcemia and renal failure in whom bone scintigraphy demonstrated striking diffuse bilateral pulmonary uptake, but subsequent gallium imaging demonstrated no evidence of pulmonary uptake greater than body background, is discussed. We conclude that pulmonary uptake of gallium cannot be attributed to calcium deposition and should carry the same clinical significance in regard to inflammatory and malignant lesions as would be assigned to patients without pulmonary calcific deposits.

  9. Renal lymphoma imaged by ultrasound and Gallium-67

    SciTech Connect

    Shirkhoda, A.; Staab, E.V.; Mittelstaedt, C.A.

    1980-10-01

    Lymphomatous involvement of the kidneys, usually a secondary process, may be seen as single or multiple sonolucent or weakly echogenic masses on ultrasound. The majority of these patients have a known diagnosis of lymphoma and are being evaluated for change in nodal mass size, flank pain, and/or deteriorating renal function. Occasionally, these masses are discovered on an excretory urogram and are further investigated with ultrasound. The ultrasound findings may be confirmed with gallium scanning. Five such cases are presented along with the ultrasonic and gallium scan findings.

  10. Construction of an electrode modified with gallium(III) for voltammetric detection of ovalbumin.

    PubMed

    Sugawara, Kazuharu; Okusawa, Makoto; Takano, Yusaku; Kadoya, Toshihiko

    2014-01-01

    Electrodes modified with gallium(III) complexes were constructed to detect ovalbumin (OVA). For immobilization of a gallium(III)-nitrilotriacetate (NTA) complex, the electrode was first covered with collagen film. After the amino groups of the film had reacted with isothiocyanobenzyl-NTA, the gallium(III) was then able to combine with the NTA moieties. Another design featured an electrode cast with a gallium(III)-acetylacetonate (AA) complex. The amount of gallium(III) in the NTA complex was equivalent to one-quarter of the gallium(III) that could be utilized from an AA complex. However, the calibration curves of OVA using gallium(III)-NTA and gallium(III)-AA complexes were linear in the ranges of 7.0 × 10(-11) - 3.0 × 10(-9) M and 5.0 × 10(-10) - 8.0 × 10(-9) M, respectively. The gallium(III) on the electrode with NTA complex had high flexibility due to the existence of a spacer between the NTA and the collagen film, and, therefore, the reactivity of the gallium(III) to OVA was superior to that of the gallium(III)-AA complex with no spacer.

  11. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  12. Unintentional gallium incorporation in InGaN layers during epitaxial growth

    NASA Astrophysics Data System (ADS)

    Zhou, Kun; Ren, Huaijin; Ikeda, Masao; Liu, Jianping; Ma, Yi; Gao, Songxin; Tang, Chun; Li, Deyao; Zhang, Liquan; Yang, Hui

    2017-01-01

    Unintentional gallium incorporation was observed and investigated in the epitaxial growth of InGaN by metalorganic vapor phase epitaxy. InGaN was grown without intentional gallium precursor and the gallium incorporation rate was found not dependent on TEGa source but was significantly influenced by temperature and TMIn source flow. The source of the unintentional gallium incorporation is confirmed to be from the flow distributor of the reactor. The incorporation mechanism was analyzed to be the diffusion of resultant of transmetalation reaction between TMIn or its decomposed products (for example DMIn) and residual gallium. Due to the unintentional gallium incorporation, the growth rate and indium content of InGaN layer are determined by indium source, gallium source and the growth temperature.

  13. Method for improving the growth of cadmium telluride on a gallium arsenide substrate

    SciTech Connect

    Reno, J.L.

    1990-12-31

    A method for preparing a gallium arsenide substrate, prior to growing a layer of cadmium telluride on a support surface thereof. The preparation includes the steps of cleaning the gallium arsenide substrate and thereafter forming prepatterned shapes on the support surface of the gallium arsenide substrate. The layer of cadmium telluride then grown on the prepared substrate results in dislocation densities of approximately 1{times}10{sup 6}/cm{sup 2} or less. The prepatterned shapes on the support surface of the gallium arsenide substrate are formed by reactive ion etching an original outer surface of the gallium arsenide substrate and into the body of the gallium arsenide substrate to a depth of at least two microns. The prepatterned shapes have the appearance of cylindrical mesas each having a diameter of at lease twelve microns. After the mesas are formed on the support surface of the gallium arsenide substrate, the substrate is again cleaned.

  14. Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

    SciTech Connect

    Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

    1989-01-01

    Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.

  15. Gallium arsenide processing for gate array logic

    NASA Technical Reports Server (NTRS)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  16. Gallium arsenide processing for gate array logic

    NASA Astrophysics Data System (ADS)

    Cole, Eric D.

    1989-09-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  17. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    SciTech Connect

    Fontcuberta i Morral, A.; Colombo, C.; Abstreiter, G.; Arbiol, J.; Morante, J. R.

    2008-02-11

    Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO{sub 2} layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO{sub 2} pinholes induces the formation of nanocraters, found to be the key for the nucleation of the nanowires. With SiO{sub 2} thicknesses up to 30 nm, nanocraters reach the underlying substrate, resulting into a preferential growth orientation of the nanowires. Possibly related to the formation of nanocraters, we observe an incubation period of 258 s before the nanowires growth is initiated.

  18. Large disparity between gallium and antimony self-diffusion in gallium antimonide.

    PubMed

    Bracht, H; Nicols, S P; Walukiewicz, W; Silveira, J P; Briones, F; Haller, E E

    2000-11-02

    The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of the diffusion of impurities, and a quantitative understanding of self- and foreign-atom diffusion in semiconductors is central to the development of advanced electronic devices. In the past few years, self-diffusion studies have been performed successfully with isotopically controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide. Self-diffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion, as only Ga has two stable isotopes, 69Ga and 71Ga. Here we report self-diffusion studies with an isotopically controlled multilayer structure of crystalline GaSb. Two stable isotopes exist for both Ga and Sb, allowing the simultaneous study of diffusion on both sublattices. Our experiments show that near the melting temperature, Ga diffuses more rapidly than Sb by over three orders of magnitude. This surprisingly large difference in atomic mobility requires a physical explanation going beyond standard diffusion models. Combining our data for Ga and Sb diffusion with related results for foreign-atom diffusion in GaSb (refs 8, 9), we conclude that the unusually slow Sb diffusion in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices, which suppress the defects that are required for Sb diffusion.

  19. Discovery of gallium, germanium, lutetium, and hafnium isotopes

    SciTech Connect

    Gross, J.L.; Thoennessen, M.

    2012-09-15

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is described here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  20. Deformation potential constants of gallium impurity in germanium

    NASA Astrophysics Data System (ADS)

    Martin, A. D.; Fisher, P.; Freeth, C. A.; Salib, E. H.; Simmonds, P. E.

    1983-12-01

    The deformation potential constants and intensity parameters of some of the states and optically induced transitions of gallium impurity in germanium have been determined both experimentally and theoretically. The latter are based on the effective mass wavefunctions of Kohn and Schechter and of Mendelson and James. Reasonably good agreement is found between the experimental and theoretical results.

  1. The 100 micron detector development program. [gallium doped germanium photoconductors

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1976-01-01

    An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.

  2. Cellular uptake and anticancer activity of carboxylated gallium corroles.

    PubMed

    Pribisko, Melanie; Palmer, Joshua; Grubbs, Robert H; Gray, Harry B; Termini, John; Lim, Punnajit

    2016-04-19

    We report derivatives of gallium(III) tris(pentafluorophenyl)corrole, 1 [Ga(tpfc)], with either sulfonic (2) or carboxylic acids (3, 4) as macrocyclic ring substituents: the aminocaproate derivative, 3 [Ga(ACtpfc)], demonstrated high cytotoxic activity against all NCI60 cell lines derived from nine tumor types and confirmed very high toxicity against melanoma cells, specifically the LOX IMVI and SK-MEL-28 cell lines. The toxicities of 1, 2, 3, and 4 [Ga(3-ctpfc)] toward prostate (DU-145), melanoma (SK-MEL-28), breast (MDA-MB-231), and ovarian (OVCAR-3) cancer cells revealed a dependence on the ring substituent: IC50values ranged from 4.8 to >200 µM; and they correlated with the rates of uptake, extent of intracellular accumulation, and lipophilicity. Carboxylated corroles 3 and 4, which exhibited about 10-fold lower IC50values (<20 µM) relative to previous analogs against all four cancer cell lines, displayed high efficacy (Emax= 0). Confocal fluorescence imaging revealed facile uptake of functionalized gallium corroles by all human cancer cells that followed the order: 4 > 3 > 2 > 1 (intracellular accumulation of gallium corroles was fastest in melanoma cells). We conclude that carboxylated gallium corroles are promising chemotherapeutics with the advantage that they also can be used for tumor imaging.

  3. Gallium accumulation in the stomach. A frequent incidental finding

    SciTech Connect

    MacMahon, H.; Vyborny, C.; Sephardari, S.; Kirchner, P.; Ryan, J.

    1985-10-01

    Accumulation of tracer by the stomach is a frequent incidental occurrence on gallium scans. Gastric concentration of Ga-67 equal to or greater than that seen in the liver was observed in approximately 10% of patients in a large series. Although a few of these patients had known or subsequently demonstrated gastric pathologic conditions, most had no clinically or radiographically identifiable gastric disease.

  4. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  5. Cellular uptake and anticancer activity of carboxylated gallium corroles

    PubMed Central

    Pribisko, Melanie; Palmer, Joshua; Grubbs, Robert H.; Gray, Harry B.; Termini, John; Lim, Punnajit

    2016-01-01

    We report derivatives of gallium(III) tris(pentafluorophenyl)corrole, 1 [Ga(tpfc)], with either sulfonic (2) or carboxylic acids (3, 4) as macrocyclic ring substituents: the aminocaproate derivative, 3 [Ga(ACtpfc)], demonstrated high cytotoxic activity against all NCI60 cell lines derived from nine tumor types and confirmed very high toxicity against melanoma cells, specifically the LOX IMVI and SK-MEL-28 cell lines. The toxicities of 1, 2, 3, and 4 [Ga(3-ctpfc)] toward prostate (DU-145), melanoma (SK-MEL-28), breast (MDA-MB-231), and ovarian (OVCAR-3) cancer cells revealed a dependence on the ring substituent: IC50 values ranged from 4.8 to >200 µM; and they correlated with the rates of uptake, extent of intracellular accumulation, and lipophilicity. Carboxylated corroles 3 and 4, which exhibited about 10-fold lower IC50 values (<20 µM) relative to previous analogs against all four cancer cell lines, displayed high efficacy (Emax = 0). Confocal fluorescence imaging revealed facile uptake of functionalized gallium corroles by all human cancer cells that followed the order: 4 >> 3 > 2 >> 1 (intracellular accumulation of gallium corroles was fastest in melanoma cells). We conclude that carboxylated gallium corroles are promising chemotherapeutics with the advantage that they also can be used for tumor imaging. PMID:27044076

  6. Characterization of Heavily Doped ALUMINUM(X)GALLIUM(1 -X)ARSENIDE:TELLURIUM Grown on Semi-Insulating Gallium-Arsenide

    NASA Astrophysics Data System (ADS)

    Malloy, Kevin John

    The ability to dope a semiconductor into near metallic conduction widens its usefulness as a material and thereby permits the construction of new devices. Aluminum Gallium Arsenide is no exception. Heavily doped n-type Aluminum Gallium Arsenide has important device applications in tandem junction solar cells and in high electron mobility transistors. Aluminum Gallium Arsenide heavily doped with Tellurium was grown on semi-insulating Gallium Arsenide using liquid phase epitaxy. It was found that the addition of 0.4 atomic percent Tellurium to the melt reduced the Aluminum content of solid Aluminum Gallium Arsenide by up to 20 percent. A model was offered for this behavior involving a differential in the degree of association between Aluminum-Tellurium and Gallium-Tellurium in the liquid phase epitaxial melt. The electrical properties of n-type Aluminum Gallium Arsenide grown on semi-insulating Gallium Arsenide were modeled as a two sheet conductor. The two conductors consisted of the epitaxial n-type Aluminum Gallium Arsenide layer and the induced two dimensional electron gas present at the n-type Aluminum Gallium Arsenide-Gallium Arsenide heterojunction. This model showed the two dimensional electron gas as responsible for the constant low temperature carrier concentration observed experimentally. It also successfully explained the observation of a slope equal to the donor ionization potential instead of the donor ionization potential divided by two in the plot of the log of the carrier concentration versus reciprocal temperature. Because of the chemically independent nature of the deep donor ionization potential in Aluminum Gallium Arsenide, a minima interaction model was introduced to describe the donor level. The major matrix elements were determined to be V(,LX) = 4mV (+OR-) 1mV and V(,LL) = 40mV (+OR-) 10mV. These minima interaction matrix elements were an order of magnitude larger than suggested by theory, thus indicating the possible non-coulombic nature of

  7. Very high specific activity ⁶⁶/⁶⁸Ga from zinc targets for PET.

    PubMed

    Engle, J W; Lopez-Rodriguez, V; Gaspar-Carcamo, R E; Valdovinos, H F; Valle-Gonzalez, M; Trejo-Ballado, F; Severin, G W; Barnhart, T E; Nickles, R J; Avila-Rodriguez, M A

    2012-08-01

    This work describes the production of very high specific activity (66/68)Ga from (nat)Zn(p,n) and (66)Zn(p,n) using proton irradiations between 7 and 16 MeV, with emphasis on (66)Ga for use with common bifunctional chelates. Principal radiometallic impurities are (65)Zn from (p,x) and (67)Ga from (p,n). Separation of radiogallium from target material is accomplished with cation exchange chromatography in hydrochloric acid solution. Efficient recycling of Zn target material is possible using electrodeposition of Zn from its chloride form, but these measures are not necessary to achieve high specific activity or near-quantitative radiolabeling yields from natural targets. Inductively coupled plasma mass spectroscopy (ICP-MS) measures less than 2 ppb non-radioactive gallium in the final product, and the reactivity of (66)Ga with common bifunctional chelates, decay corrected to the end of irradiation, is 740 GBq/μmol (20 Ci/μmol) using natural zinc as a target material. Recycling enriched (66)Zn targets increased the reactivity of (66)Ga with common bifunctional chelates.

  8. Gallium nitrate ameliorates type II collagen-induced arthritis in mice.

    PubMed

    Choi, Jae-Hyeog; Lee, Jong-Hwan; Roh, Kug-Hwan; Seo, Su-Kil; Choi, Il-Whan; Park, Sae-Gwang; Lim, Jun-Goo; Lee, Won-Jin; Kim, Myoung-Hun; Cho, Kwang-rae; Kim, Young-Jae

    2014-05-01

    Rheumatoid arthritis (RA) is a chronic autoimmune inflammatory disease. Gallium nitrate has been reported to reserve immunosuppressive activities. Therefore, we assessed the therapeutic effects of gallium nitrate in the mouse model of developed type II collagen-induced arthritis (CIA). CIA was induced by bovine type II collagen with Complete Freund's adjuvant. CIA mice were intraperitoneally treated from day 36 to day 49 after immunization with 3.5mg/kg/day, 7mg/kg/day gallium nitrate or vehicle. Gallium nitrate ameliorated the progression of mice with CIA. The clinical symptoms of collagen-induced arthritis did not progress after treatment with gallium nitrate. Gallium nitrate inhibited the increase of CD4(+) T cell populations (p<0.05) and also inhibited the type II collagen-specific IgG2a-isotype autoantibodies (p<0.05). Gallium nitrate reduced the serum levels of TNF-α, IL-6 and IFN-γ (p<0.05) and the mRNA expression levels of these cytokine and MMPs (MMP2 and MMP9) in joint tissues. Western blotting of members of the NF-κB signaling pathway revealed that gallium nitrate inhibits the activation of NF-κB by blocking IκB degradation. These data suggest that gallium nitrate is a potential therapeutic agent for autoimmune inflammatory arthritis through its inhibition of the NF-κB pathway, and these results may help to elucidate gallium nitrate-mediated mechanisms of immunosuppression in patients with RA.

  9. Sputtering of tin and gallium-tin clusters

    SciTech Connect

    Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

    1994-08-01

    Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

  10. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  11. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  12. Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs

    SciTech Connect

    Corbel, C.; Pierre, F. ); Saarinen, K.; Hautojaervi, P. ); Moser, P. )

    1992-02-15

    Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs by 1.5-MeV electron irradiation at 20 K. Two types of acceptors can be separated. The first ones are negative vacancy-type defects which anneal out over a very broad range of temperature between 77 and 500 K. The second ones are negative ion-type defects which are stable still at 450 K. The data show that these two types of defects are independent and do not form close pairs. We attribute both to gallium-related defects. We identify the ion-type acceptors as isolated gallium antisites. The vacancy-type acceptors are identified as gallium vacancies which are isolated or involved in negatively charged complexes. The introduction rate of the gallium antisite is estimated to be 1.8{plus minus}0.3 cm{sup {minus}1} in the fluence range 10{sup 17}--10{sup 18} cm{sup {minus}2} for 1.5-MeV electron irradiation at 20 K.

  13. Low-energy ion beam-based deposition of gallium nitride

    SciTech Connect

    Vasquez, M. R.; Wada, M.

    2016-02-15

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  14. Low-energy ion beam-based deposition of gallium nitride.

    PubMed

    Vasquez, M R; Wada, M

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  15. Low-energy ion beam-based deposition of gallium nitride

    NASA Astrophysics Data System (ADS)

    Vasquez, M. R.; Wada, M.

    2016-02-01

    An ion source with a remote plasma chamber excited by a 13.56 MHz radio frequency power was used for low-energy broad ion beam extraction. Optical emission spectral analyses showed the sputtering and postionization of a liquid gallium (Ga) target placed in a chamber separated from the source bombarded by argon (Ar) plasma guided by a bent magnetic field. In addition, an E × B probe successfully showed the extraction of low-energy Ga and Ar ion beams using a dual-electrode extractor configuration. By introducing dilute amounts of nitrogen gas into the system, formation of thin Ga-based films on a silicon substrate was demonstrated as determined from X-ray diffraction and X-ray reflectivity studies.

  16. Nuclear Data Sheets for A = 65

    SciTech Connect

    Browne, E.; Tuli, J.K.

    2010-09-15

    The evaluators present in this publication spectroscopic data and level schemes from radioactive decay and nuclear reactions studies for all isobars with mass number A=65. Not much is known experimentally about {sup 65}V and {sup 65}Cr, although they are expected to decay by {beta}-emission. Spin/parity assignments for {sup 65}Mn, {sup 65}Fe, {sup 65}As, and {sup 65}Se are not firmly established.

  17. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  18. Far-Infrared and Optical Studies of Gallium Arsenide and Aluminum Gallium Arsenide Semiconductor Structures

    NASA Astrophysics Data System (ADS)

    Stanaway, Mark Brian

    Available from UMI in association with The British Library. Requires signed TDF. This thesis reports far-infrared (FIR) and photoluminescence studies, performed at low temperatures (4.2K) and at magnetic fields up to 25T, of selectively and inadvertently doped bulk and low dimensional gallium arsenide (GaAs) and aluminium gallium arsenide (AlGaAs) semiconductor structures grown by molecular beam epitaxy. High-resolution FIR magnetospectroscopy of ultra -high mobility n-GaAs reveals a variety of shallow donor intra-impurity transitions plus spin-split higher Landau level transitions in the photoconductive response. The first observation of polarons bound to D^ - ions in bulk n-GaAs is reported. The excited state spectrum of the confined silicon donor in GaAs/AlGaAs multi-quantum wells (MQWs) has been examined. Narrower linewidths and more higher excited state donor transitions are noted in the present photoconductive investigation compared with previous reports. The electron recombination dynamics has been examined in silicon-doped GaAs/AlGaAs MQWs and homogeneous and sheet -doped bulk n-GaAs samples using time-resolved FIR photoconductivity. The extrinsic response of doped MQW structures suggests a potential use as a fast, sensitive detectors of FIR. FIR transmission measurements are reported for GaAs/AlGaAs quantum wells (QWs) of various widths in magnetic fields of up to 20T, tilted away from the normal to the QW plane by angles up to theta = 50^circ. Deviation of the cyclotron resonance field from a costheta law are interpreted using theoretical models describing Landau level/electric subband coupling. The in-plane magnetic field and excitation power dependence of the photoluminescence intensity of a GaAs/AlGaAs QW spectral feature is interpreted in terms of charge transfer in the QW, using a coupled oscillator model, and the efficiency of nonradiative electronic traps. In-plane magnetic field studies of the photoluminescence from a superlattice structure

  19. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    PubMed

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  20. CD71 phenotype and the value of gallium imaging in lymphomas

    SciTech Connect

    Feremans, W.; Bujan, W.; Neve, P.; Delville, J.P.; Schandene, L. )

    1991-03-01

    Tumor cells of 14 cases of non-Hodgkin lymphomas and 2 cases of Hodgkin disease were tested for the presence of the transferrin receptor (CD71) by flow cytofluorimetry before 67gallium imaging. It appeared that expression of CD71 phenotype was closely related to the positivity of gallium scan before therapy. We feel that this test is able to predict the avidity for 67gallium and the clinical implications are discussed.

  1. In vitro and in vivo biological activities of iron chelators and gallium nitrate against Acinetobacter baumannii.

    PubMed

    de Léséleuc, Louis; Harris, Greg; KuoLee, Rhonda; Chen, Wangxue

    2012-10-01

    We investigated the ability of compounds interfering with iron metabolism to inhibit the growth of Acinetobacter baumannii. Iron restriction with transferrin or 2,2-bipyridyl significantly inhibited A. baumannii growth in vitro. Gallium nitrate alone was moderately effective at reducing A. baumannii growth but became bacteriostatic in the presence of serum or transferrin. More importantly, gallium nitrate treatment reduced lung bacterial burdens in mice. The use of gallium-based therapies shows promise for the control of multidrug-resistant A. baumannii.

  2. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

    DTIC Science & Technology

    2014-09-01

    Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell by Naresh C Das ARL-TR-7054 September 2014...September 2014 Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell Naresh C Das Sensors and Electron...From - To) 01/02/2014–07/15/2014 4. TITLE AND SUBTITLE Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell 5a

  3. Gallium uptake in the thyroid gland in amiodarone-induced hyperthyroidism

    SciTech Connect

    Ling, M.C.; Dake, M.D.; Okerlund, M.D.

    1988-04-01

    Amiodarone is an iodinated antiarrhythmic agent that is effective in the treatment of atrial and ventricular arrhythmias. A number of side effects are seen, including pulmonary toxicity and thyroid dysfunction. A patient with both amiodarone-induced pneumonitis and hyperthyroidism who exhibited abnormal gallium activity in the lungs, as well as diffuse gallium uptake in the thyroid gland is presented. The latter has not been previously reported and supports the concept of iodide-induced thyroiditis with gallium uptake reflecting the inflammatory response.

  4. Diffuse Gallium-67 Accumulation in the Left Atrial Wall Detected Using SPECT/CT Fusion Images

    PubMed Central

    Kawabe, Joji; Higashiyama, Shigeaki; Yoshida, Atsushi; Shiomi, Susumu

    2016-01-01

    Gallium-67 scintigraphy is useful for detecting active inflammation. We show a 66-year-old female patient with atrial fibrillation and diffuse thickening of the left atrial wall due to acute myocarditis, who presented diffuse abnormal accumulation of gallium-67 in the left atrium on single photon emission computed tomography/computed tomography (SPECT/CT) fusion images. In the second gallium-67 scan 2 months after the first scintigraphy, the abnormal accumulation in the heart was no longer visible. Gallium-67 SPECT/CT images helped understanding the disease condition that temporary inflammation in the left atrium caused atrial fibrillation. PMID:28097031

  5. Fatigue and tensile strength of dental gallium alloys after artificial saliva immersion.

    PubMed

    Meiana, S; Takahashi, H

    1998-12-01

    Fatigue strength using the stair-case method and tensile strength of dental gallium alloys after artificial saliva immersion were measured for evaluating the effects of corrosive environment storage on the mechanical properties of the gallium alloys. The fatigue and the tensile strengths of both gallium alloys stored in artificial saliva were significantly decreased after 12-month storage, while those stored in air increased with storage period. The fracture surfaces of the specimens in artificial saliva showed not only metallic luster but also dark areas. In the dark area, the matrix might have dissolved during immersion. These results suggested that the concern over corrosion resistance of gallium alloys still remained.

  6. THE INDIUM-GALLIUM RADIATION LOOP OF THE IRT NUCLEAR REACTOR,

    DTIC Science & Technology

    NUCLEAR REACTORS, *ISOTOPES), (*INDIUM, *GALLIUM), GAMMA RAYS, NEUTRONS, INTERMETALLIC COMPOUNDS, ALUMINUM, SHIELDING, GENERATORS, EUTECTICS, ARGON, OXALIC ACID , ELECTROMAGNETIC PUMPS, HALF LIFE, HEAT TRANSFER

  7. Thin film metallic glass as a diffusion barrier for copper indium gallium selenide solar cell on stainless steel substrate: A feasibility study

    NASA Astrophysics Data System (ADS)

    Diyatmika, Wahyu; Xue, Lingjun; Lin, Tai-Nan; Chang, Chia-wen; Chu, Jinn P.

    2016-08-01

    The feasibility of using Zr53.5Cu29.1Al6.5Ni10.9 thin-film metallic glass (TFMG) as a diffusion barrier for copper indium gallium selenide (CIGS) solar cells on stainless steel (SS) is investigated. The detrimental Fe diffusion from SS into CIGS is found to be effectively hindered by the introduction of a 70-nm-thick TFMG barrier; the cell performance is thus improved. Compared with the 2.73% of CIGS on bare SS, a higher efficiency of 5.25% is obtained for the cell with the Zr52Cu32Al9Ni7 TFMG barrier.

  8. Gallium nitride nanowires by maskless hot phosphoric wet etching

    NASA Astrophysics Data System (ADS)

    Bharrat, D.; Hosalli, A. M.; Van Den Broeck, D. M.; Samberg, J. P.; Bedair, S. M.; El-Masry, N. A.

    2013-08-01

    We demonstrate gallium nitride (GaN) nanowires formation by controlling the selective and anisotropic etching of N-polar GaN in hot phosphoric acid. Nanowires of ˜109/cm,2 total height of ˜400 nm, and diameters of 170-200 nm were obtained. These nanowires have both non-polar {11¯00}/ {112¯0} and semi-polar {1011¯} facets. X-Ray Diffraction characterization shows that screw dislocations are primarily responsible for preferential etching to create nanowires. Indium gallium nitride multi-quantum wells (MQWs) grown on these GaN nanowires showed a blue shift in peak emission wavelength of photoluminescence spectra, and full width at half maximum decreased relative to MQWs grown on planar N-polar GaN, respectively.

  9. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    SciTech Connect

    Niu, Nan Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  10. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect

    Atsumi, Katsuhiro; Inoue, Yoku; Nakano, Takayuki; Mimura, Hidenori; Aoki, Toru

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  11. Detection of postcardiotomy bacterial pericarditis with gallium-67 citrate

    SciTech Connect

    Zuckier, L.S.; Weissmann, H.S.; Goldman, M.J.; Brodman, R.; Kamholz, S.L.; Freeman, L.M.

    1986-04-01

    A 46-year-old man who had undergone apical cardiac aneurysmectomy with a ventriculotomy graft and implanted automatic cardioverter-defibrillator electrodes, presented with fever, left-sided pleuritic chest pain, and a draining sinus. A Ga-67 scan was performed to aid in determining whether the infection was limited to the chest wall or if it had penetrated deeper to the cardiac structures. Uptake of gallium within the cardiac region, in association with minimal rib uptake of Tc-99m MDP, strongly supported the existence of infection within the pericardium. CT scan demonstrated a pericardial collection which under CT-guided aspiration proved to be purulent. Definitive surgical drainage was performed, and the patient was discharged 4 weeks postoperatively. Ga-67 imaging can provide an accurate and relatively rapid means of localizing infection in the postcardiotomy patient. A thorough bibliography of pericardial gallium uptake is provided.

  12. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  13. Amorphous carbon buffer layers for separating free gallium nitride films

    NASA Astrophysics Data System (ADS)

    Altakhov, A. S.; Gorbunov, R. I.; Kasharina, L. A.; Latyshev, F. E.; Tarala, V. A.; Shreter, Yu. G.

    2016-11-01

    The possibility of using amorphous diamond-like carbon (DLC) films for self-separation of gallium nitride (GaN) layers grown by hydride vapor-phase epitaxy has been analyzed. DLC films have been synthesized by plasma-enhanced chemical vapor deposition under low pressure on sapphire (Al2O3) substrates with a (0001) crystallographic orientation. The samples have been studied by the methods of Raman scattering and X-ray diffraction analysis. It is shown that thin DLC films affect only slightly the processes of nucleation and growth of gallium nitride films. Notably, the strength of the "GaN film-Al2O3" substrate interface decreases, which facilitates separation of the GaN layers.

  14. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    DTIC Science & Technology

    2015-02-09

    cell .................. 10  4.2.3  Effect of Sunlight Concentration (terrestrial applications) ..................................... 11  4.2.4...distribution is unlimited. 1 1 SUMMARY This work evaluates the viability of an intermediate band solar cell design, wherein a superlattice, comprising...AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich

  15. Two-photon photovoltaic effect in gallium arsenide.

    PubMed

    Ma, Jichi; Chiles, Jeff; Sharma, Yagya D; Krishna, Sanjay; Fathpour, Sasan

    2014-09-15

    The two-photon photovoltaic effect is demonstrated in gallium arsenide at 976 and 1550 nm wavelengths. A waveguide-photodiode biased in its fourth quadrant harvests electrical power from the optical energy lost to two-photon absorption. The experimental results are in good agreement with simulations based on nonlinear wave propagation in waveguides and the drift-diffusion model of carrier transport in semiconductors. Power efficiency of up to 8% is theoretically predicted in optimized devices.

  16. Growth of Gallium Nitride Nanorods and Their Coalescence Overgrowth

    DTIC Science & Technology

    2012-09-07

    absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures,” Optics Express, Vol. 20, No. S1, p...constituent atoms ( gallium , indium , which are formed through the decomposition of metalorganic precursors TEGa and TMIn, and nitrogen) projected onto the...found that the QW widths are narrower and the indium contents are higher in the sidewall m-plane QWs, when compared with the top-face c-plane QWs. Also

  17. The Russian-American Gallium solar neutrino Experiment

    SciTech Connect

    Elliott, S.R.; Abdurashitov, J.N.; Bowles, T.J.

    1995-12-31

    The Russian-American Gallium solar neutrino Experiment (SAGE) is described. The solar neutrino flux measured by 31 extractions through October, 1993 is presented. The result of 69 {+-} 10{sub {minus}7}{sup +5} SNU is to be compared with a standard solar model prediction of 132 SNU. The status of a {sup 51}Cr neutrino source irradiation to test the overall operation of the experiment is also presented.

  18. The Russian-American gallium solar neutrino experiment

    SciTech Connect

    Elliott, S.R.; Wilkerson, J.F.; Abdurashitov, J.N.

    1995-08-01

    The Russian-American Gallium solar neutrino Experiment (SAGE) is described. The solar neutrino flux measured by 31 extractions through October, 1993 is presented. The result of 69 {+-} 10{sub {minus}7}{sup +5} SNU is to be compared with a standard solar model prediction of 132 SNU. The status of a {sup 51}Cr neutrino source irradiation to test the overall operation of the experiment is also presented.

  19. Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

    DTIC Science & Technology

    2007-06-01

    possibilities of InGaN tandem PV structures”, Solar Energy Materials & Solar Cells, Vol. 87, 595-603, 2004. [6] S. M. Sze, Semiconductor Devices, 2nd edition... ENERGY (EV) TO WAVELENGTH (UM) ..............................................86 D. IV CURVE PLOTS FOR INDIUM GALLIUM NITRIDE QUAD JUNCTION SOLAR... energy on different band gaps (From [15]).....................................19 Figure 13. Simple cubic lattice structure (From [16])......20 Figure

  20. Thermodynamic properties of lanthanum in gallium-zinc alloys

    NASA Astrophysics Data System (ADS)

    Dedyukhin, A. S.; Shepin, I. E.; Kharina, E. A.; Shchetinskiy, A. V.; Volkovich, V. A.; Yamshchikov, L. F.

    2016-09-01

    Thermodynamic properties of lanthanum were determined in gallium-zinc alloys of the eutectic and over-eutectic compositions. The electromotive force measurements were used to determine thermodynamic activity and sedimentation technique to measure solubility of lanthanum in liquid metal alloys. Temperature dependencies of lanthanum activity, solubility and activity coefficients in alloys with Ga-Zn mixtures containing 3.64, 15 and 50 wt. % zinc were obtained.

  1. A novel bioassay using the barnacle Amphibalanus amphitrite to evaluate chronic effects of aluminium, gallium and molybdenum in tropical marine receiving environments.

    PubMed

    van Dam, Joost W; Trenfield, Melanie A; Harries, Simon J; Streten, Claire; Harford, Andrew J; Parry, David; van Dam, Rick A

    2016-11-15

    A need exists for appropriate tools to evaluate risk and monitor potential effects of contaminants in tropical marine environments, as currently impact assessments are conducted by non-representative approaches. Here, a novel bioassay is presented that allows for the estimation of the chronic toxicity of contaminants in receiving tropical marine environments. The bioassay is conducted using planktonic larvae of the barnacle Amphibalanus amphitrite and is targeted at generating environmentally relevant, chronic toxicity data for water quality guideline derivation or compliance testing. The developmental endpoint demonstrated a consistently high control performance, validated through the use of copper as a reference toxicant. In addition, the biological effects of aluminium, gallium and molybdenum were assessed. The endpoint expressed high sensitivity to copper and moderate sensitivity to aluminium, whereas gallium and molybdenum exhibited no discernible effects, even at high concentrations, providing valuable information on the toxicity of these elements in tropical marine waters.

  2. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    EPA Science Inventory

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  3. STS-65 onboard: IML-2

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Onboard Space Shuttle Columbia (STS-65) Mission specialist Leroy Chiao is seen in the International Microgravity Laboratory 2 (IML-2) spacelab science moduel in front of Rack 3 and above center aisle equipment. Chiao has just made an observation of the goldfish container (silver apparatus on left beween his right hand and knee) . The Rack 3 Aquatic Animal Experiment Unit (AAEU) also contains Medaka and newts. Chiao joined five other NASA astronauts and a Japanese payload specialist for two weeks of experimenting.

  4. 65th birthday Jack Steinberger

    ScienceCinema

    None

    2016-07-12

    Laudatio pour Jack Steinberger né le 25 mai 1921, à l'occasion de son 65me anniversaire et sa retraite officielle, pour sa précieuse collaboration au Cern. Néanmoins son principal activité continuera comme avant dans sa recherche au Cern. Plusieurs orateurs prennent la parole (p.ex. E.Picasso) pour le féliciter et lui rendre hommage

  5. 65th birthday Jack Steinberger

    SciTech Connect

    2007-12-04

    Laudatio pour Jack Steinberger né le 25 mai 1921, à l'occasion de son 65me anniversaire et sa retraite officielle, pour sa précieuse collaboration au Cern. Néanmoins son principal activité continuera comme avant dans sa recherche au Cern. Plusieurs orateurs prennent la parole (p.ex. E.Picasso) pour le féliciter et lui rendre hommage

  6. Challenges for critical raw material recovery from WEEE - The case study of gallium.

    PubMed

    Ueberschaar, Maximilian; Otto, Sarah Julie; Rotter, Vera Susanne

    2017-02-01

    Gallium and gallium compounds are more frequently used in future oriented technologies such as photovoltaics, light diodes and semiconductor technology. In the long term the supply risk is estimated to be critical. Germany is one of the major primary gallium producer, recycler of gallium from new scrap and GaAs wafer producer. Therefore, new concepts for a resource saving handling of gallium and appropriate recycling strategies have to be designed. This study focus on options for a possible recycling of gallium from waste electric and electronic equipment. To identify first starting points, a substance flow analysis was carried out for gallium applied in integrated circuits applied on printed circuit boards and for LEDs used for background lighting in Germany in 2012. Moreover, integrated circuits (radio amplifier chips) were investigated in detail to deduce first approaches for a recycling of such components. An analysis of recycling barriers was carried out in order to investigate general opportunities and risks for the recycling of gallium from chips and LEDs. Results show, that significant gallium losses arose in primary production and in waste management. 93±11%, equivalent to 43,000±4700kg of the total gallium potential was lost over the whole primary production process until applied in electronic goods. The largest share of 14,000±2300kggallium was lost in the production process of primary raw materials. The subsequent refining process was related to additional 6900±3700kg and the chip and wafer production to 21,700±3200kg lost gallium. Results for the waste management revealed only low collection rates for related end-of-life devices. Not collected devices held 300 ± 200 kg gallium. Due to the fact, that current waste management processes do not recover gallium, further 80 ± 10 kg gallium were lost. A thermal pre-treatment of the chips, followed by a manual separation allowed an isolation of gallium rich fractions, with gallium mass fractions up to

  7. Evaluation of the male reproductive toxicity of gallium arsenide.

    PubMed

    Bomhard, Ernst M; Cohen, Samuel M; Gelbke, Heinz-Peter; Williams, Gary M

    2012-10-01

    Gallium arsenide is an important semiconductor material marketed in the shape of wafers and thus is not hazardous to the end user. Exposure to GaAs particles may, however, occur during manufacture and processing. Potential hazards require evaluation. In 14-week inhalation studies with small GaAs particles, testicular effects have been reported in rats and mice. These effects occurred only in animals whose lungs showed marked inflammation and also had hematologic changes indicating anemia and hemolysis. The time- and concentration-dependent progressive nature of the lung and blood effects together with bioavailability data on gallium and arsenic lead us to conclude that the testicular/sperm effects are secondary to hypoxemia resulting from lung damage rather than due to a direct chemical effect of gallium or arsenide. Conditions leading to such primary effects are not expected to occur in humans at production and processing sites. This has to be taken into consideration for any classification decision for reproductive toxicity; especially a category 1 according to the EU CLP system is not warranted.

  8. Aqueous stability of Ga- and N-polar gallium nitride.

    PubMed

    Foster, Corey M; Collazo, Ramon; Sitar, Zlatko; Ivanisevic, Albena

    2013-01-08

    The stability of III-nitride semiconductors in various solutions becomes important as researchers begin to integrate them into sensing platforms. This study quantitatively compares the stability of GaN surfaces with different polarities. This type of quantification is important because it represents the first step toward designing semiconductor material interfaces compatible with solution conditions. A stability study of Ga- and N-polar GaN was conducted by immersion of the surfaces in deionized H(2)O, pH 5, pH 9, and H(2)O(2) solutions for 7 days. Inductively coupled plasma mass spectrometry of the solutions was conducted to determine the amount of gallium leached from the surface. X-ray photoelectron spectroscopy and atomic force microscopy were used to compare the treated surfaces to untreated surfaces. The results show that both gallium nitride surface types exhibit the greatest stability in acidic and neutral solutions. Gallium polar surfaces were found to exhibit superior stability to nitrogen polar surfaces in the solutions studied. Our findings highlight the need for further research on surface passivation and functionalization techniques for polar III-nitride semiconductors.

  9. Appraisal of lupus nephritis by renal imaging with gallium-67

    SciTech Connect

    Bakir, A.A.; Lopez-Majano, V.; Hryhorczuk, D.O.; Rhee, H.L.; Dunea, G.

    1985-08-01

    To assess the activity of lupus nephritis, 43 patients with systemic lupus erythematosus (SLE) were studied by gallium imaging. Delayed renal visualization 48 hours after the gallium injection, a positive result, was noted in 25 of 48 scans. Active renal disease was defined by the presence of hematuria, pyuria (10 or more red blood cells or white blood cells per high-power field), proteinuria (1 g or more per 24 hours), a rising serum creatinine level, or a recent biopsy specimen showing proliferative and/or necrotizing lesions involving more than 20 percent of glomeruli. Renal disease was active in 18 instances, inactive in 23, and undetermined in seven (a total of 48 scans). Sixteen of the 18 scans (89 percent) in patients with active renal disease showed positive findings, as compared with only four of 23 scans (17 percent) in patients with inactive renal disease (p less than 0.001). Patients with positive scanning results had a higher rate of hypertension (p = 0.02), nephrotic proteinuria (p = 0.01), and progressive renal failure (p = 0.02). Mild mesangial nephritis (World Health Organization classes I and II) was noted only in the patients with negative scanning results (p = 0.02) who, however, showed a higher incidence of severe extrarenal SLE (p = 0.04). It is concluded that gallium imaging is a useful tool in evaluating the activity of lupus nephritis.

  10. Incidental diagnosis of pregnancy on bone and gallium scintigraphy

    SciTech Connect

    Palestro, C.J.; Malat, J.; Collica, C.J.; Richman, A.H.

    1986-03-01

    Bone and gallium scintigraphy were performed as part of the diagnostic workup of a 21-yr-old woman who presented at our institution with a history of progressively worsening low back pain over a 1-wk period of time. The angiographic phase of the bone scan demonstrated a well-defined radionuclide blush within the pelvis just cephalad to the urinary bladder with persistent hyperemia noted in the blood-pool image. We attribute these findings to a uterine blush secondary to the pronounced uterine muscular hyperplasia, hyperemia, and edema that accompany pregnancy. Gallium scintigraphy demonstrated intense bilateral breast accumulation of the imaging agent in a typical doughnut pattern which is commonly found in the prelactating and lactating breast. Also demonstrated was apparent gallium accumulation in the placenta. This case is presented to emphasize the radionuclide findings that occur during pregnancy, particularly the incidental finding of radionuclide blush during the angiographic phase of a radionuclide scintigraphy which should alert the nuclear physician to the possibility of pregnancy in a woman of childbearing age.

  11. 40 CFR 65.103 - Equipment identification.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... § 65.107(e)(3) (pumps in light liquid service), § 65.109(e)(3) (agitators), § 65.111(d) (pressure... the provisions of § 65.107(e)(6), connectors meeting the provisions of § 65.108(e)(1), and agitators... of paragraph (c)(2)(i) of this section apply. Agitators meeting the provisions of § 65.109(e)(5)...

  12. 40 CFR 65.103 - Equipment identification.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... § 65.107(e)(3) (pumps in light liquid service), § 65.109(e)(3) (agitators), § 65.111(d) (pressure... the provisions of § 65.107(e)(6), connectors meeting the provisions of § 65.108(e)(1), and agitators... of paragraph (c)(2)(i) of this section apply. Agitators meeting the provisions of § 65.109(e)(5)...

  13. 40 CFR 65.103 - Equipment identification.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... § 65.107(e)(3) (pumps in light liquid service), § 65.109(e)(3) (agitators), § 65.111(d) (pressure... the provisions of § 65.107(e)(6), connectors meeting the provisions of § 65.108(e)(1), and agitators... of paragraph (c)(2)(i) of this section apply. Agitators meeting the provisions of § 65.109(e)(5)...

  14. 40 CFR 65.103 - Equipment identification.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... § 65.107(e)(3) (pumps in light liquid service), § 65.109(e)(3) (agitators), § 65.111(d) (pressure... the provisions of § 65.107(e)(6), connectors meeting the provisions of § 65.108(e)(1), and agitators... of paragraph (c)(2)(i) of this section apply. Agitators meeting the provisions of § 65.109(e)(5)...

  15. 40 CFR 65.103 - Equipment identification.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... § 65.107(e)(3) (pumps in light liquid service), § 65.109(e)(3) (agitators), § 65.111(d) (pressure... the provisions of § 65.107(e)(6), connectors meeting the provisions of § 65.108(e)(1), and agitators... of paragraph (c)(2)(i) of this section apply. Agitators meeting the provisions of § 65.109(e)(5)...

  16. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  17. Comparison of the antimicrobial activities of gallium nitrate and gallium maltolate against Mycobacterium avium subsp. paratuberculosis in vitro.

    PubMed

    Fecteau, Marie-Eve; Aceto, Helen W; Bernstein, Lawrence R; Sweeney, Raymond W

    2014-10-01

    Johne's disease (JD) is an enteric infection of cattle and other ruminants caused by Mycobacterium avium subsp. paratuberculosis (MAP). This study compared the antimicrobial activities of gallium nitrate (GaN) and gallium maltolate (GaM) against two field MAP isolates by use of broth culture. The concentrations that resulted in 99% growth inhibition of isolates 1 and 2 were, respectively, 636 µM and 183 µM for GaN, and 251 µM and 142 µM for GaM. For both isolates, time to detection was significantly higher for GaM than GaN. These results suggest that GaM is more efficient than GaN in inhibiting MAP growth in vitro.

  18. Ultrafast laser fabrication of low-loss waveguides in chalcogenide glass with 0.65 dB/cm loss.

    PubMed

    McMillen, Ben; Zhang, Botao; Chen, Kevin P; Benayas, Antonio; Jaque, Daniel

    2012-05-01

    This Letter reports on the fabrication of low-loss waveguides in gallium-lanthanum-sulfide chalcogenide glasses using an ultrafast laser. Spatial beam shaping and temporal pulse width tuning were used to optimize the guided mode profiles and optical loss of laser-written waveguides. Highly symmetric single-mode waveguides guiding at 1560 nm with a loss of 0.65  dB/cm were fabricated using 1.5 ps laser pulses. This Letter suggests a pathway to produce high quality optical waveguides in substrates with strong nonlinearity using the ultrafast laser direct writing technique.

  19. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.

    PubMed

    Carter, Dean E; Aposhian, H Vasken; Gandolfi, A Jay

    2003-12-15

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  20. In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

    PubMed

    Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

    2014-03-04

    In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

  1. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid

  2. Monolithic Gallium Arsenide Superheterodyne Front End.

    DTIC Science & Technology

    1982-06-01

    subsystems. Therefore, microstrip circuitry was selected as the transmission medium over co - planar transmission lines, slot lines, and other space...power the chip. Figure 2.20 is a schematic of the two stage preamplifier and Fig. 2.21 is a photograph of the chip. The inherent non -linear nature of...Model Cgso , 0.5 pF gmo = 24 mS 7 1.63 44.4 3.08 -7.47 8 1.83 44.4 3.85 -8.18 9 2.01 44.4 4.65 -8.78 D: Noise Parameters for Fukui Model (Recessed Gate

  3. The development and implementation of industrial hydrometallurgical gallium recovery of the Clarksville Refinery waste residue

    NASA Astrophysics Data System (ADS)

    Fayram, Todd S.

    Todd Fayram, the Gordonsville Operation of Pasminco US Inc., and the Center for Advanced Mineral and Metallurgical Processing (CAMP) at Montana Tech studied, developed and implemented a pilot scale hydrometallurgical facility for the industrial recovery of gallium. This thesis describes the testing and engineering program that culminated in this successful recovery of gallium through process described herein.

  4. Gallium nitrate: effects on cartilage during limb regeneration in the axolotl, Ambystoma mexicanum.

    PubMed

    Tassava, Roy A; Mendenhall, Luciara; Apseloff, Glen; Gerber, Nicholas

    2002-09-01

    Gallium nitrate, a drug shown to have efficacy in Paget's disease of bone, hypercalcemia of malignancy, and a variety of experimental autoimmune diseases, also inhibits the growth of some types of cancer. We examined dose and timing of administration of gallium nitrate on limb regeneration in the Mexican axolotl, Ambystoma mexicanum. Administered by intraperitoneal injection, gallium nitrate inhibited limb regeneration in a dose-dependent manner. Gallium nitrate initially suppressed epithelial wound healing and subsequently distorted both anterior-posterior and proximo-distal chondrogenic patterns. Gallium nitrate given at three days after amputation severely inhibited regeneration at high doses (6.25 mg/axolotl) and altered the normal patterning of the regenerates at low doses (3.75 mg/axolotl). Administration of 6.25 mg of gallium nitrate at four or 14 days prior to amputation also inhibited regeneration. In amputated limbs of gallium-treated axolotls, the chondrocytes were lost from inside the radius/ulna. Limbs that regenerated after gallium treatment was terminated showed blastema formation preferentially over the ulna. New cartilage of the regenerate often attached to the sides of the existing radius/ulna proximally into the stump and less so to the distal cut ends. J. Exp. Zool. 293:384-394, 2002.

  5. Failure of Gallium-67 scintigraphy to identify reliably noninfectious interstitial nephritis: concise communication

    SciTech Connect

    Graham, G.D.; Lundy, M.M.; Moreno, A.J.

    1983-07-01

    Gallium-67 scintigraphy has been reported to be useful in the diagnosis of noninfectious interstitial nephritis. We studied 12 patients with Ga-67 citrate that were diagnosed as having noninfectious interstitial nephritis on renal biopsy. Only seven of the twelve patients with interstitial nephritis on biopsy were scan-positive. Gallium-67 scintigraphy may not reliably identify noninfectious interstitial nephritis.

  6. Synthesis and characterization of functional multicomponent nanosized gallium chelated gold crystals.

    PubMed

    Zambre, Ajit; Silva, Francisco; Upendran, Anandhi; Afrasiabi, Zahra; Xin, Yan; Paulo, António; Kannan, Raghuraman

    2014-03-28

    In this communication, we describe a novel synthetic method for fabricating multicomponent gold nanoparticles containing both gallium ions and biomolecules on the surface. Detailed compositional analysis, using STEM-HAADF and EELS spectroscopy, confirmed the crystalline nature of gold and chelation of gallium ions. The presence of the biomolecule was validated using conventional ELISA.

  7. Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

    NASA Technical Reports Server (NTRS)

    Khambaty, M. B.; Hartwig, W. H.

    1972-01-01

    Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

  8. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  9. Siderophore-mediated mechanism of gallium uptake demonstrated in the microorganism Ustilago sphaerogena

    SciTech Connect

    Emery, T.; Hoffer, P.B.

    1980-10-01

    The radioactive gallium analog of ferrichrome, Ga-67 deferriferrichrome, has been prepared and compared with ferrichrome in the specific siderophore-transport system of Ustilago sphaerogena. The gallium analog is taken up by the cells in an active transport process indistinguishable from that of ferrichrome. The findings may explain how Ga(III) mimics Fe(III) in clinical use.

  10. 47 CFR 65.500 - Net income.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Net income. 65.500 Section 65.500... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Interexchange Carriers § 65.500 Net income. The net income methodology specified in § 65.450 shall be utilized by all interexchange carriers that...

  11. 47 CFR 65.500 - Net income.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Net income. 65.500 Section 65.500... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Interexchange Carriers § 65.500 Net income. The net income methodology specified in § 65.450 shall be utilized by all interexchange carriers that...

  12. 47 CFR 65.500 - Net income.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 3 2014-10-01 2014-10-01 false Net income. 65.500 Section 65.500... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Interexchange Carriers § 65.500 Net income. The net income methodology specified in § 65.450 shall be utilized by all interexchange carriers that...

  13. 47 CFR 65.500 - Net income.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 3 2012-10-01 2012-10-01 false Net income. 65.500 Section 65.500... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Interexchange Carriers § 65.500 Net income. The net income methodology specified in § 65.450 shall be utilized by all interexchange carriers that...

  14. Extraction of gallium(III) from hydrochloric acid solutions by trioctylammonium-based mixed ionic liquids.

    PubMed

    Katsuta, Shoichi; Okai, Miho; Yoshimoto, Yuki; Kudo, Yoshihiro

    2012-01-01

    The extractabilities of aluminium(III), gallium(III), and indium(III) from hydrochloric acid solutions were investigated using a mixture of two protic ionic liquids, trioctylammonium bis(trifluoromethanesulfonyl)amide ([TOAH][NTf(2)]) and trioctylammonium nitrate ([TOAH][NO(3)]). At a HCl concentration of 4 mol L(-1) or more, gallium(III) was nearly quantitatively extracted and the extractability order was Ga > Al > In. The extractability of gallium(III) increased with increasing [TOAH][NO(3)] content in the mixed ionic liquid. The extracted gallium(III) was quantitatively stripped with aqueous nitric acid solutions. The separation and recovery of gallium(III) from hydrochloric acid solutions containing excess indium(III) was demonstrated using the mixed ionic liquid.

  15. The Inhibition of Escherichia coli Biofilm Formation by Gallium Nitrate-Modified Titanium.

    PubMed

    Zhu, Yuanyuan; Qiu, Yan; Chen, Ruiqi; Liao, Lianming

    2015-08-01

    Periprosthetic infections are notoriously difficult to treat due to biofilm formation. Previously, we reported that gallium-EDTA attached to PVC (polyvinyl chloride) surface could prevent bacterial colonization. Herein we examined the effect of this gallium-EDTA complex on Escherichia coli biofilm formation on titanium. It was clearly demonstrated that gallium nitrate significantly inhibited the growth and auto-aggregation of Escherichia coli. Furthermore, titanium with gallium-EDTA coating resisted bacterial colonization as indicated by crystal violet staining. When the chips were immersed in human serum and incubated at 37 °C, they demonstrated significant antimicrobial activity after more than 28 days of incubation. These findings indicate that gallium-EDTA coating of implants can result in a surface that can resist bacterial colonization. This technology holds great promise for the prevention and treatment of periprosthetic infections.

  16. Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Stolz, A.; Cho, E.; Dogheche, E.; Androussi, Y.; Troadec, D.; Pavlidis, D.; Decoster, D.

    2011-04-01

    The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55 μm, corresponding to the best value reported so far for a GaN-based waveguide.

  17. Measurement of achievable plutonium decontamination from gallium by means of PUREX solvent extraction

    SciTech Connect

    Collins, E.D.; Campbell, D.O.; Felker, L.K.

    2000-01-01

    The objective of the work described herein was to measure, experimentally, the achievable decontamination of plutonium from gallium by means of the PUREX solvent extraction process. Gallium is present in surplus weapons-grade plutonium (WG-Pu) at a concentration of approximately 1 wt%. Plans are to dispose of surplus WG-Pu by converting it to UO{sub 2}-PuO{sub 2} mixed oxide (MOX) fuel and irradiating it in commercial power reactors. However, the presence of high concentrations of gallium in plutonium is a potential corrosion problem during the process of MOX fuel irradiation. The batch experiments performed in this study were designed to measure the capability of the PUREX solvent extraction process to separate gallium from plutonium under idealized conditions. Radioactive tracing of the gallium with {sup 72}Ga enabled the accurate measurement of low concentrations of extractable gallium. The experiments approximated the proposed flowsheet for WG-Pu purification, except that only one stage was used for each process: extraction, scrubbing, and stripping. With realistic multistage countercurrent systems, much more efficient separations are generally obtained. The gallium decontamination factor (DF) obtained after one extraction stage was about 3 x 10{sup 6}. After one scrub stage, all gallium measurements were less than the detection limit, which corresponded to DFs >5 x 10{sup 6}. All these values exceed a 10{sup 6} DF needed to meet a hypothetical 10-ppb gallium impurity limit in MOX fuel. The results of this study showed no inherent or fundamental problem with regard to removing gallium from plutonium.

  18. Gallium nitrate regulates rat osteoblast expression of osteocalcin protein and mRNA levels.

    PubMed

    Guidon, P T; Salvatori, R; Bockman, R S

    1993-01-01

    Gallium nitrate, a group IIIa metal salt, has been found to be clinically effective for the treatment of accelerated bone resorption in cancer-related hypercalcemia and Paget's disease. Here we report the effects of gallium nitrate on osteocalcin mRNA and protein levels on the rat osteoblast-like cell line ROS 17/2.8. Gallium nitrate reduced both constitutive and vitamin D3-stimulated osteocalcin protein levels in culture medium by one-half and osteocalcin mRNA levels to one-third to one-tenth of control. Gallium nitrate also inhibited vitamin D3 stimulation of osteocalcin and osteopontin mRNA levels but did not affect constitutive osteopontin mRNA levels. Among several different metals examined, gallium was unique in its ability to reduce osteocalcin mRNA levels without decreasing levels of other mRNAs synthesized by ROS 17/2.8 cells. The effects of gallium nitrate on osteocalcin mRNA and protein synthesis mimic those seen when ROS 17/2.8 cells are exposed to transforming growth factor beta 1 (TGF beta 1); however, TGF-beta 1 was not detected in gallium nitrate-treated ROS 17/2.8 cell media. Use of the RNA polymerase II inhibitor 5,6-dichloro-1-beta-D-ribofuranosylbenzimidazole demonstrated that gallium nitrate did not alter the stability of osteocalcin mRNA. Transient transfection assays using the rat osteocalcin promoter linked to the bacterial reporter gene chloramphenicol acetyltransferase indicated that gallium nitrate blocked reporter gene expression stimulated by the osteocalcin promoter. This is the first reported effect of gallium nitrate on isolated osteoblast cells.

  19. Pathogenic Roles of Glutamic Acid Decarboxylase 65 Autoantibodies in Cerebellar Ataxias

    PubMed Central

    Hampe, Christiane S.

    2017-01-01

    Reports suggesting a pathogenic role of autoantibodies directed against glutamic acid decarboxylase 65 (GAD65Abs) in cerebellar ataxias (CAs) are reviewed, and debatable issues such as internalization of antibodies by neurons and roles of epitopes are discussed. GAD65 is one of two enzymes that catalyze the conversion of glutamate to the inhibitory neurotransmitter gamma-aminobutyric acid (GABA). A pathogenic role of GAD65Ab in CAs is suggested by in vivo and in vitro studies. (1) Intracerebellar administration of cerebrospinal fluid (CSF) immunoglobulins (IgGs) obtained from GAD65Ab-positive CA patients impairs cerebellar modulation of motor control in rats. (2) CSF IgGs act on terminals of GABAergic neurons and decrease the release of GABA in cerebellar slices from rats and mice. (3) Absorption of GAD65Ab by recombinant GAD65 diminishes the above effects, and monoclonal human GAD65Ab (b78) mimic the effects of CSF IgGs in vivo and in vitro. Studies using GAD65-KO mice confirm that the target molecule is GAD65. (4) Notably, the effects of GAD65Ab depend on the epitope specificity of the monoclonal GAD65Ab. Taken together, these results indicate that epitope-specific GAD65Ab-induced impairment of GABA release is involved in the pathogenesis of GAD65Ab-positive CA and support the early detection of GAD65Ab-associated CA to initiate immunotherapy before irreversible neuronal death in the cerebellum. PMID:28386570

  20. Quantum Properties of Electron Transport in Silicon Mosfets and GALLIUM-ARSENIDE:ALUMINUM-GALLIUM - Arsenide.

    NASA Astrophysics Data System (ADS)

    Mensz, Piotr Maciej

    Several important issues of the quantum transport have been discussed in a context of analysis of the experimental results obtained from the transport measurements on three different two dimensional electron systems; silicon inversion layers, bismuth doped accumulation layers and GaAs inversion layers. Magnetotransport of (100) inversion layers formed in Silicon MOSFETs and GaAs: Al_{rm x}Ga_{rm 1-x} As heterojunctions has been explored in different configurations of magnetic fields, and in a temperature range 1K-4.2K. A new anomalous positive magnetoconductance had been observed in parallel magnetic fields at Silicon and Gallium Arsenide inversion layers and has been interpreted as an effect of suppression of the Weak Localization correction to the conductivity. The experiment deduces the presence of the electron random walk in the direction perpendicular to the Si-SiO_2 interface with the RMS value delta z <=q 2.1 +/- 0.15 A and delta z <=q 1.45 +/- 0.07 A in Silicon and GaAs inversion layers, respectively. These experiments have established a method to direct measure the mean fluctuations of the average position of the electron wave function with resolution of the order of 0.1 A as it undergoes transport parallel to the interface in electron inversion or accumulation layer systems. At low electron densities in the Silicon inversion layer the magnetoconductance changes sign and has magnitude much larger than predicted by the electron-electron interaction theory for the spin independent coupling. The enhancement can be explained by including the spin fluctuations induced by disorder. In the experiments on two dimensional bismuth doped accumulation layers the influence of the impurity species on the quantum corrections to the conductivity was explored. It was found that introducing bismuth impurities to the two dimensional electron system, causes an enhancement in logarithmic temperature dependence of conductivity. Finally, Quantum Hall Effect has been explored in

  1. Gallium as a Therapeutic Agent: A Thermodynamic Evaluation of the Competition between Ga(3+) and Fe(3+) Ions in Metalloproteins.

    PubMed

    Nikolova, Valia; Angelova, Silvia; Markova, Nikoleta; Dudev, Todor

    2016-03-10

    Gallium has been employed (in the form of soluble salts) to fight various forms of cancer, infectious, and inflammatory diseases. The rationale behind this lies in the ability of Ga(3+) cation to mimic closely in appearance the native ferric ion, Fe(3+), thus interfering with the biological processes requiring ferric cofactors. However, Ga(3+) ion cannot participate in redox reactions and, when substituting for the "native" Fe(3+) ion in the enzyme active site, renders it inactive. Although a significant body of information on the Ga(3+)-Fe(3+) competition in biological systems has been accumulated, the intimate mechanism of the process is still not well understood and several questions remain: What are the basic physical principles governing the competition between the two trivalent cations in proteins? What type of metal centers are the most likely targets for gallium therapy? To what extent are the Fe(3+)-binding sites in the key enzyme ribonucleotide reductase vulnerable to Ga(3+) substitution? Here, we address these questions by studying the competition between Ga(3+) and Fe(3+) ions in model metal binding sites of various compositions and charge states. The results obtained are in line with available experimental data and shed light on the intimate mechanism of the Ga(3+)/Fe(3+) selectivity in various model metal binding sites and biological systems such as serum transferrin and ribonucleotide reductase.

  2. Improved performance design of gallium arsenide solar cells for space

    NASA Technical Reports Server (NTRS)

    Parekh, R. H.; Barnett, A. M.

    1984-01-01

    An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

  3. Testing of gallium arsenide solar cells on the CRRES vehicle

    NASA Technical Reports Server (NTRS)

    Trumble, T. M.

    1985-01-01

    A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

  4. Structural Studies on Gallium-Bismuthate Glasses Containing Iron

    NASA Astrophysics Data System (ADS)

    Simon, S.

    Glasses belonging to xFe2O3·(80-x)Bi2O3·20Ga2O3 system (0≤x≤20 mol%) were prepared using the melt quenching technique. Local order changes were investigated as a function of iron content using electron paramagnetic resonance and infrared spectroscopy results. The glass network mainly consist of [BiO6] octahedral units. Iron ions enter the glass network by breaking up Bi-O-Bi bonds. Gallium ions also behave as glass network modifier.

  5. Gallium uptake in tryptophan-related pulmonary disease

    SciTech Connect

    Kim, S.M.; Park, C.H.; Intenzo, C.M.; Patel, R. )

    1991-02-01

    We describe a patient who developed fever, fatigue, muscle weakness, dyspnea, skin rash, and eosinophilia after taking high doses of tryptophan for insomnia for two years. A gallium-67 scan revealed diffuse increased uptake in the lung and no abnormal uptake in the muscular distribution. Bronchoscopy and biopsy confirmed inflammatory reactions with infiltration by eosinophils, mast cells, and lymphocytes. CT scan showed an interstitial alveolar pattern without fibrosis. EMG demonstrated diffuse myopathy. Muscle biopsy from the right thigh showed an inflammatory myositis with eosinophilic and lymphocytic infiltrations.

  6. Gallium nitride electrodes for membrane-based electrochemical biosensors

    NASA Astrophysics Data System (ADS)

    Schubert, T.; Steinhoff, G.; von Ribbeck, H.-G.; Stutzmannn, M.; Eickhoff, M.; Tanaka, M.

    2009-10-01

    We report on the deposition of planar lipid bilayers (supported membranes) on gallium nitride (GaN) electrodes for potential applications as membrane-based biosensors. The kinetics of the lipid membrane formation upon vesicle fusion were monitored by simultaneous measurements of resistance and capacitance of the membrane using AC impedance spectroscopy in the frequency range between 50mHz and 50kHz. We could identify a two-step process of membrane spreading and self-healing. Despite its relatively low resistance, the membrane can be modeled by a parallel combination of an ideal resistor and capacitor, indicating that the membrane efficiently blocks the diffusion of ions.

  7. Gallium-doped germanium, evaluation of photoconductors, part 1

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1979-01-01

    Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

  8. Investigation of properties of the gallium phosphide/insulator interface

    SciTech Connect

    Kashkarov, P.K.; Nevzorov, A.N.; Sorokin, I.N.; Sosnovskikh, Yu.N.; Syagailo, A.I.

    1987-08-01

    In this paper, the capacitance-voltage characteristics (CVC) of gallium phosphide-based MIS structures with two types of insulating layer are studied over wide ranges of temperature and frequency. Single crystals of n-type GaP were used. The CVC recorded in the dark and under illumination are shown, as well as the energy-band diagram for the MIS structure with intrinsic oxide. The CVC of MIS structures with a dual insulating layer are also presented. It is found that the hysteresis in the CVC of GaP-based MIS structures decreases by practically an order to magnitude when dual oxide is applied.

  9. A gallium phosphide high-temperature bipolar junction transistor

    NASA Technical Reports Server (NTRS)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  10. A review of magnetostrictive iron-gallium alloys

    NASA Astrophysics Data System (ADS)

    Atulasimha, Jayasimha; Flatau, Alison B.

    2011-04-01

    A unique combination of low hysteresis, moderate magnetostriction at low magnetic fields, good tensile strength, machinability and recent progress in commercially viable methods of processing iron-gallium alloys make them well poised for actuator and sensing applications. This review starts with a brief historical note on the early developments of magnetostrictive materials and moves to the recent work on FeGa alloys and their useful properties. This is followed by sections addressing the challenges specific to the characterization and processing of FeGa alloys and the state of the art in modeling their actuation and sensing behavior.

  11. Anomalous tensoelectric effects in gallium arsenide tunnel diodes

    SciTech Connect

    Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol', A.A.

    1988-02-01

    Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

  12. Interdiffusion of magnesium and iron dopants in gallium nitride

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomonobu; Kitatani, Takeshi; Terano, Akihisa; Mochizuki, Kazuhiro

    2015-03-01

    The interdiffusion of magnesium and iron in gallium nitride (GaN), i.e., magnesium-iron interdiffusion, was investigated using magnesium-doped GaN layers on iron-doped GaN substrates. The investigation confirms that the magnesium-iron interdiffusion strongly depends on the concentrations of magnesium and iron, that is, it occurs when the iron and magnesium concentrations are high (magnesium: 2 × 1020 cm-3 iron: 2 × 1019 cm-3). It also confirms that diffused iron in the magnesium-doped GaN layer acts as a nonradiative recombination center in GaN.

  13. Gallium nitride electro-acoustic devices and acoustic metamaterials

    NASA Astrophysics Data System (ADS)

    Rais-Zadeh, Mina

    2016-05-01

    Gallium nitride (GaN) being one of a few piezoelectric semiconductors with low acoustic loss is a perfect material for electro-acoustic applications. Interactions of electrons and phonons are facilitated by the piezoelectric effect in addition to the deformation coupling in GaN, a property that can be used to implement a variety of very interesting devices and metamaterials, such as resonant transistors, acoustic amplifiers, circulators, and couplers. This talk covers theoretical basis of such devices and overviews recent advances in this technology.

  14. Visible light metasurfaces based on gallium nitride high contrast gratings

    NASA Astrophysics Data System (ADS)

    Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei

    2016-05-01

    We propose visible-light metasurfaces (VLMs) capable of serving as lens and beam deflecting element based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wavefront of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 86.3%, and a VLM with beam deflection angle of 6.09° and transmissivity as high as 91.4%. The proposed all-dielectric metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

  15. Gallium scintigraphy in a case of tuberculous trochanteric bursitis.

    PubMed

    Kawamura, Etsushi; Kawabe, Joji; Tsumoto, Chikako; Hayashi, Takehiro; Oe, Ai; Kurooka, Hiroko; Kotani, Jin; Higashiyama, Shigeaki; Tsushima, Hiroyuki; Habu, Daiki; Shiomi, Susumu

    2007-06-01

    We report a 67-year-old woman with systemic lupus erythematosus and systemic disseminated tuberculosis affecting the femoral trochanteric bursae, a site rarely affected by tuberculosis. For quantification of the inflammation with gallium-67 scintigraphy, we calculated the radioisotope count ratio in the most inflamed areas, the right lateral thorax and bursa of the right greater trochanter. Systemic scanning with this modality allowed evaluation of the extent of lesions and simple quantitative determination of the severity of inflammation, yielding information useful for the follow-up of the patient during the course of tuberculosis treatment.

  16. Gallium nitride electrodes for membrane-based electrochemical biosensors.

    PubMed

    Schubert, T; Steinhoff, G; von Ribbeck, H-G; Stutzmannn, M; Eickhoff, M; Tanaka, M

    2009-10-01

    We report on the deposition of planar lipid bilayers (supported membranes) on gallium nitride (GaN) electrodes for potential applications as membrane-based biosensors. The kinetics of the lipid membrane formation upon vesicle fusion were monitored by simultaneous measurements of resistance and capacitance of the membrane using AC impedance spectroscopy in the frequency range between 50 mHz and 50 kHz. We could identify a two-step process of membrane spreading and self-healing. Despite its relatively low resistance, the membrane can be modeled by a parallel combination of an ideal resistor and capacitor, indicating that the membrane efficiently blocks the diffusion of ions.

  17. Lasing action in gallium nitride quasicrystal nanorod arrays.

    PubMed

    Chang, Shih-Pang; Sou, Kuok-Pan; Chen, Chieh-Han; Cheng, Yuh-Jen; Huang, Ji-Kai; Lin, Chung-Hsiang; Kuo, Hao-Chung; Chang, Chun-Yen; Hsieh, Wen-Feng

    2012-05-21

    We report the observation of lasing action from an optically pumped gallium nitride quasicrystal nanorod arrays. The nanorods were fabricated from a GaN substrate by patterned etching, followed by epitaxial regrowth. The nanorods were arranged in a 12-fold symmetric quasicrystal pattern. The regrowth grew hexagonal crystalline facets and core-shell multiple quantum wells (MQWs) on nanorods. Under optical pumping, multiple lasing peaks resembling random lasing were observed. The lasing was identified to be from the emission of MQWs on the nanorod sidewalls. The resonant spectrum and mode field of the 12-fold symmetric photonic quasicrystal nanorod arrays is discussed.

  18. Pulsed Laser Deposition of Gallium Arsenide.

    NASA Astrophysics Data System (ADS)

    Leppert, Valerie Jean

    Recent applications of pulsed laser deposition to the growth of various types of thin films suggest that it may be successfully used for III-V semiconductors. The goal of this work is to characterize the growth of GaAs using PLD and to determine the scope of the technique for this material. Therefore, laser ablation of GaAs is characterized here using spectroscopic analysis of the optical emission lines from the laser plasma plume. Additionally, the influence of growth conditions on GaAs films grown on a range of substrates is examined. In-situ analysis of the GaAs plume revealed that atomic, rather than molecular, arsenic is a major constituent of the GaAs plume. This may explain why no arsenic overpressure was needed to grow stoichiometric material. Nonlinear behavior of Ga emission intensity with laser power density indicated that several ablation mechanisms may be at work. EDAX studies indicate that deposited material is stoichiometric. Single crystal GaAs was grown on GaAs, Si and InP using PLD. A deposition rate of 0.65 mu m/hr was obtained. Defects consisting of dislocations, twinning and stacking faults were observed. An increase in laser power density decreased the minimum temperature for good film growth. Films were smooth overall, but suffered from an occasional inclusion of macroparticulates. Methods for screening particles were examined. The optimum growth temperature for GaAs/GaAs growth was 470^circC, but good films could be obtained as low as 335^circ C. GaAs/Si underwent a transition from a (110) oriented film to single crystal (100) film at 470 ^circC. Photoluminescence was obtained for the GaAs/GaAs and GaAs/InP systems. Well oriented films of GaAs (110) on an amorphous substrate (fused silica) were obtained for the first time using PLD at temperatures as low as 288^ circC. The effects of deposition temperature, deposition time, background gas, annealing, MOCVD overlayer and shadow masking were examined.

  19. The impact of gallium content on degradation, bioactivity, and antibacterial potency of zinc borate bioactive glass.

    PubMed

    Rahimnejad Yazdi, Alireza; Torkan, Lawrence; Stone, Wendy; Towler, Mark R

    2017-02-02

    Zinc borate glasses with increasing gallium content (0, 2.5, 5, 10, and 15 Wt % Ga) were synthesized and their degradation, bioactivity in simulated body fluid (SBF), and antibacterial properties were investigated. ICP measurements showed that increased gallium content in the glass resulted in increased gallium ion release and decreased release of other ions. Degradability declined with the addition of gallium, indicating the formation of more symmetric BO3 units with three bridging oxygens and asymmetric BO3 units with two bridging oxygens in the glass network as the gallium content in the series increased. The formation of amorphous CaP on the glass surface after 24 h of incubation in SBF was confirmed by SEM, XRD, and FTIR analyses. Finally, antibacterial evaluation of the glasses using the agar disc-diffusion method demonstrated that the addition of gallium increased the antibacterial potency of the glasses against P. aeruginosa (Gram-negative) while decreasing it against S. epidermidis (Gram-positive); considering the ion release trends, this indicates that the gallium ion is responsible for the glasses' antibacterial behavior against P. aeruginosa while the zinc ion controls the antibacterial activity against S. epidermidis. The statistical significance of the observed trends in the measurements were confirmed by applying the Kruskal-Wallis H Test. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2017.

  20. Study on natural convection capability of liquid gallium for passive decay heat removal system (PDHRS)

    SciTech Connect

    Kang, S.; Ha, K. S.; Lee, S. W.; Park, S. D.; Kim, S. M.; Seo, H.; Kim, J. H.; Bang, I. C.

    2012-07-01

    The safety issues of the SFRs are important due to the fact that it uses sodium as a nuclear coolant, reacting vigorously with water and air. For that reason, there are efforts to seek for alternative candidates of liquid metal coolants having excellent heat transfer property and to adopt improved safety features to the SFR concepts. This study considers gallium as alternative liquid metal coolant applicable to safety features in terms of chemical activity issue of the sodium and aims to experimentally investigate the natural convection capability of gallium as a feasibility study for the development of gallium-based passive safety features in SFRs. In this paper, the design and construction of the liquid gallium natural convection loop were carried out. The experimental results of heat transfer coefficient of liquid gallium resulting in heat removal {approx}2.53 kW were compared with existing correlations and they were much lower than the correlations. To comparison of the experimental data with computer code analysis, gallium property code was developed for employing MARS-LMR (Korea version of RELAP) based on liquid gallium as working fluid. (authors)

  1. Technetium-99m DTPA aerosol and gallium scanning in acquired immune deficiency syndrome

    SciTech Connect

    Picard, C.; Meignan, M.; Rosso, J.; Cinotti, L.; Mayaud, C.; Revuz, J.

    1987-07-01

    In 11 non-smoking AIDS patients suspected of pneumocystis carinii pneumonia (PCP), the results of Tc-99m DTPA aerosol clearances, gallium scans, and arterial blood gases were compared with those of bronchoalveolar lavage (BAL). Nine patients had PCP. All had increased clearances five times higher than the normal (5.6 +/- 2.3% X min-1 vs 1.1 +/- 0.34% X min-1, N = 10, P less than 0.001), suggesting an increased alveolar permeability. Gallium scans were abnormal in six patients but normal or slightly abnormal in the three others. Four of these nine patients had normal chest x-rays. In two of these the gallium scan was abnormal, but in the two others, only the increased Tc-99m DTPA clearances showed evidence of lung disease. Two patients had normal BAL, with normal clearances and gallium scans. Four out of the nine patients with PCP were studied after treatment. Three recovered and had normal clearance and gallium scans. One still had PCP with increased clearance but normal gallium scan. Gallium scanning and Tc-99m DTPA clearance are useful for detecting lung disease in AIDS patients with suspected PCP and for prompting BAL when chest x-rays and PaO/sub 2/ levels are normal. Due to its high sensitivity, a normal Tc-99m DTPA clearance could avoid BAL.

  2. Gallium-containing phospho-silicate glasses: synthesis and in vitro bioactivity.

    PubMed

    Franchini, Mirco; Lusvardi, Gigliola; Malavasi, Gianluca; Menabue, Ledi

    2012-08-01

    A series of Ga-containing phospho-silicate glasses based on Bioglass 45S5, having molar formula 46.2SiO2·24.3Na2O·26.9CaO·2.6P2O5·xGa2O3 (x=1.0, 1.6, 3.5), were prepared by fusion method. The reference Bioglass 45S5 without gallium was also prepared. The synthesized glasses were immersed in simulated body fluid (SBF) for 30 days in order to observe ion release and hydroxyapatite (HA) formation. All Ga-containing glasses maintain the ability of HA formation as indicated by main X-ray diffractometric peaks and/or electronic scanning microscopy results. HA layer was formed after 1 day of SBF soaking in 45S5 glass containing up to 1.6% Ga2O3 content. Moreover, gallium released by the glasses was found to be partially precipitated on the glass surface as gallium phosphate. Further increase in gallium content reduced the ion release in SBF. The maximum of Ga(3+) concentration measured in solution is ~6 ppm determined for 3.5% Ga2O3 content. This amount is about half of the toxic level (14 ppm) of gallium and the glasses release gallium till 30 days of immersion in SBF. Considering the above results, the studied materials can be proposed as bioactive glasses with additional antimicrobial effect of gallium having no toxic outcome.

  3. STS-65 Mission Onboard Photograph

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Astronaut Donald Thomas conducts the Fertilization and Embryonic Development of Japanese Newt in Space (AstroNewt) experiment at the Aquatic Animal Experiment Unit (AAEU) inside the International Microgravity Laboratory-2 (IML-2) science module. The AstroNewt experiment aims to know the effects of gravity on the early developmental process of fertilized eggs using a unique aquatic animal, the Japanese red-bellied newt. The newt egg is a large single cell at the begirning of development. The Japanese newt mates in spring and autumn. In late autumn, female newts enter hibernation with sperm in their body cavity and in spring lay eggs and fertilize them with the stored sperm. The experiment takes advantage of this feature of the newt. Groups of newts were sent to the Kennedy Space Center and kept in hibernation until the mission. The AAEU cassettes carried four newts aboard the Space Shuttle. Two newts in one cassette are treated by hormone injection on the ground to simulate egg laying. The other two newts are treated on orbit by the crew. The former group started maturization of eggs before launch. The effects of gravity on that early process were differentiated by comparison of the two groups. The IML-2 was the second in a series of Spacelab flights designed to conduct research by the international science community in a microgravity environment. Managed by the Marshall Space Flight Center, the IML-2 was launched on July 8, 1994 aboard the STS-65 Space Shuttle mission, Orbiter Columbia.

  4. STS-65 Mission Onboard Photograph

    NASA Technical Reports Server (NTRS)

    1994-01-01

    Astronaut Donald Thomas conducts the Fertilization and Embryonic Development of Japanese Newt in Space (AstroNewt) experiment at the Aquatic Animal Experiment Unit (AAEU) inside the International Microgravity Laboratory-2 (IML-2) science module. The AstroNewt experiment aims to know the effects of gravity on the early developmental process of fertilized eggs using a unique aquatic animal, the Japanese red-bellied newt. The newt egg is a large single cell at the begirning of development. The Japanese newt mates in spring and autumn. In late autumn, female newts enter hibernation with sperm in their body cavity and in spring lay eggs and fertilized them with the stored sperm. The experiment takes advantage of this feature of the newt. Groups of newts were sent to the Kennedy Space Center and kept in hibernation until the mission. The AAEU cassettes carried four newts aboard the Space Shuttle. Two newts in one cassette are treated by hormone injection on the ground to simulate egg laying. The other two newts are treated on orbit by the crew. The former group started maturization of eggs before launch. The effects of gravity on that early process were differentiated by comparison of the two groups. The IML-2 was the second in a series of Spacelab flights designed to conduct research by the international science community in a microgravity environment. Managed by the Marshall Space Flight Center, the IML-2 was launch on July 8, 1994 aboard the STS-65 Space Shuttle Orbiter Columbia mission.

  5. STS-65 Mission Onboard Photograph

    NASA Technical Reports Server (NTRS)

    1994-01-01

    In this photograph, astronaut Carl Walz performs the Performance Assessment Workstation (PAWS) experiment at the flight deck of the Space Shuttle Orbiter Columbia during the STS-65 mission. Present day astronauts are subject to a variety of stresses during spaceflight. These include microgravity, physical isolation, confinement, lack of privacy, fatigue, and changing work/rest cycles. The purpose of this experiment is to determine the effects of microgravity upon thinking skills critical to the success of operational tasks in space. The principle objective is to distinguish between the effects of microgravity on specific information-processing skills affecting performance and those of fatigue caused by long work periods. To measure these skills, the investigators use a set of computerized performance tests called the Performance Assessment Workstation, which is based on current theoretical models of human performance. The tests were selected by analyzing tasks related to space missions and their hypothesized sensitivity to microgravity. Multiple subjective measures of cumulative fatigue and changing mood states are also included for interpreting performance data.

  6. High-surface Thermally Stable Mesoporous Gallium Phosphates Constituted by Nanoparticles as Primary Building Blocks

    SciTech Connect

    V Parvulescu; V Parvulescu; D Ciuparu; C Hardacre; H Garcia

    2011-12-31

    In constant, search for micro/mesoporous materials, gallium phosphates, have attracted continued interest due to the large pore size reported for some of these solids in comparison with analogous aluminum phosphates. However up to now, the porosity of gallium phosphates collapsed upon template removal or exposure to the ambient moisture. In the present work, we describe high-surface thermally stable mesoporous gallium phosphates synthesized from gallium propoxide and PCl{sub 3} and different templating agents such as amines (dipropylamine, piperidine and aminopiperidine) and quaternary ammonium salts (C{sub 16}H{sub 33}(CH{sub 3})3NBr and C{sub 16}PyCl). These highly reactive precursors have so far not been used as gallium and phosphate sources for the synthesis of gallophosphates. Conceptually, our present synthetic procedure is based on the fast formation of gallium phosphate nanoparticles via the reaction of gallium propoxide with PCl{sub 3} and subsequent construction of the porous material with nanoparticles as building blocks. The organization of the gallophosphate nanoparticles in stable porous structures is effected by the templates. Different experimental procedures varying the molar composition of the sol-gel, pH and the pretreatment of gallium precursor were assayed, most of them leading to satisfactory materials in terms of thermal stability and porosity. In this way, a series of gallium phosphates with surface are above 200 m{sup 2} g{sup -1}, and narrow pore size from 3 to 6 nm and remarkable thermal stability (up to 550 C) have been prepared. In some cases, the structure tends to show some periodicity and regularity as determined by XRD. The remarkable stability has allowed us to test the catalytic activity of gallophosphates for the aerobic oxidation of alkylaromatics with notable good results. Our report reopens the interest for gallophosphates in heterogeneous catalysis.

  7. 47 CFR 65.500 - Net income.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Interexchange Carriers § 65.500 Net income. The net income methodology specified in § 65.450 shall be utilized by all interexchange carriers that...

  8. Low temperature solid-state synthesis of nanocrystalline gallium nitride

    SciTech Connect

    Wang, Liangbiao; Shi, Liang; Li, Qianwen; Si, Lulu; Zhu, Yongchun; Qian, Yitai

    2012-11-15

    Graphical abstract: Display Omitted Highlights: ► GaN nanocrystalline was prepared via a solid-state reacion at relatively low temperature. ► The sizes and crystallinities of the GaN samples obtained at the different temperatures are investigated. ► The GaN sample has oxidation resistance and good thermal stability below 1000 °C. -- Abstract: Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550 °C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800 °C in air.

  9. Crystallographic alignment of high-density gallium nitride nanowire arrays.

    PubMed

    Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

    2004-08-01

    Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

  10. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGES

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  11. Gallium-67 imaging in retroperitoneal fibrosis: Significance of a negative result

    SciTech Connect

    Jacobson, A.F. )

    1991-03-01

    A patient with retroperitoneal fibrosis and right peritracheal and hilar lymphadenopathy was studied using gallium-67-citrate. No abnormal uptake was seen in the regions of retroperitoneal fibrosis, while there was avid uptake in chest lesions later shown to represent small cell lung carcinoma. Retroperitoneal fibrosis which does not show gallium uptake is most likely mature, with few inflammatory elements. In patients with multiple retroperitoneal and/or mediastinal masses, gallium imaging may be useful in identifying the most active sites of disease for possible biopsy and for subsequent monitoring of response to therapy.

  12. Can gallium dimer react effectively with three H 2 molecules to form digallane?

    NASA Astrophysics Data System (ADS)

    Moc, Jerzy

    2005-06-01

    Distinct routes of formation of digallane (4) Ga 2H 4 and digallane (6) Ga 2H 6 starting with gallium atoms/H 2 and gallium dimers/H 2 are compared based on the high level ab initio single-reference CCSD(T) and CASSCF based SOCI and hybrid density functional theory calculations of the mechanisms involved. The predicted reaction paths are of relevance to the recent matrix IR studies on the gallium hydrides, notably the extensive one by Wang and Andrews [X. Wang, L. Andrews, J. Phys. Chem. A 107 (2003) 11371] who isolated and assigned the series of mono- and digallium hydrides including the two digallanes.

  13. 10 CFR 39.65 - Personnel monitoring.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 10 Energy 1 2014-01-01 2014-01-01 false Personnel monitoring. 39.65 Section 39.65 Energy NUCLEAR REGULATORY COMMISSION LICENSES AND RADIATION SAFETY REQUIREMENTS FOR WELL LOGGING Radiation Safety Requirements § 39.65 Personnel monitoring. (a) The licensee may not permit an individual to act as a...

  14. 10 CFR 39.65 - Personnel monitoring.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 10 Energy 1 2010-01-01 2010-01-01 false Personnel monitoring. 39.65 Section 39.65 Energy NUCLEAR REGULATORY COMMISSION LICENSES AND RADIATION SAFETY REQUIREMENTS FOR WELL LOGGING Radiation Safety Requirements § 39.65 Personnel monitoring. (a) The licensee may not permit an individual to act as a...

  15. 10 CFR 39.65 - Personnel monitoring.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 10 Energy 1 2011-01-01 2011-01-01 false Personnel monitoring. 39.65 Section 39.65 Energy NUCLEAR REGULATORY COMMISSION LICENSES AND RADIATION SAFETY REQUIREMENTS FOR WELL LOGGING Radiation Safety Requirements § 39.65 Personnel monitoring. (a) The licensee may not permit an individual to act as a...

  16. 10 CFR 39.65 - Personnel monitoring.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 10 Energy 1 2013-01-01 2013-01-01 false Personnel monitoring. 39.65 Section 39.65 Energy NUCLEAR REGULATORY COMMISSION LICENSES AND RADIATION SAFETY REQUIREMENTS FOR WELL LOGGING Radiation Safety Requirements § 39.65 Personnel monitoring. (a) The licensee may not permit an individual to act as a...

  17. 21 CFR 211.65 - Equipment construction.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 4 2011-04-01 2011-04-01 false Equipment construction. 211.65 Section 211.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL CURRENT GOOD MANUFACTURING PRACTICE FOR FINISHED PHARMACEUTICALS Equipment § 211.65...

  18. 21 CFR 211.65 - Equipment construction.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 4 2012-04-01 2012-04-01 false Equipment construction. 211.65 Section 211.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL CURRENT GOOD MANUFACTURING PRACTICE FOR FINISHED PHARMACEUTICALS Equipment § 211.65...

  19. 21 CFR 211.65 - Equipment construction.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 4 2010-04-01 2010-04-01 false Equipment construction. 211.65 Section 211.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL CURRENT GOOD MANUFACTURING PRACTICE FOR FINISHED PHARMACEUTICALS Equipment § 211.65...

  20. 21 CFR 211.65 - Equipment construction.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 4 2014-04-01 2014-04-01 false Equipment construction. 211.65 Section 211.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL CURRENT GOOD MANUFACTURING PRACTICE FOR FINISHED PHARMACEUTICALS Equipment § 211.65...

  1. 21 CFR 211.65 - Equipment construction.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 4 2013-04-01 2013-04-01 false Equipment construction. 211.65 Section 211.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) DRUGS: GENERAL CURRENT GOOD MANUFACTURING PRACTICE FOR FINISHED PHARMACEUTICALS Equipment § 211.65...

  2. 10 CFR 39.65 - Personnel monitoring.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 10 Energy 1 2012-01-01 2012-01-01 false Personnel monitoring. 39.65 Section 39.65 Energy NUCLEAR REGULATORY COMMISSION LICENSES AND RADIATION SAFETY REQUIREMENTS FOR WELL LOGGING Radiation Safety Requirements § 39.65 Personnel monitoring. (a) The licensee may not permit an individual to act as a...

  3. 24 CFR 92.65 - Funding sanctions.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 24 Housing and Urban Development 1 2010-04-01 2010-04-01 false Funding sanctions. 92.65 Section 92.65 Housing and Urban Development Office of the Secretary, Department of Housing and Urban Development HOME INVESTMENT PARTNERSHIPS PROGRAM Allocation Formula Insular Areas Program § 92.65 Funding...

  4. 24 CFR 92.65 - Funding sanctions.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 24 Housing and Urban Development 1 2014-04-01 2014-04-01 false Funding sanctions. 92.65 Section 92.65 Housing and Urban Development Office of the Secretary, Department of Housing and Urban Development HOME INVESTMENT PARTNERSHIPS PROGRAM Allocation Formula Insular Areas Program § 92.65 Funding...

  5. 24 CFR 92.65 - Funding sanctions.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 24 Housing and Urban Development 1 2013-04-01 2013-04-01 false Funding sanctions. 92.65 Section 92.65 Housing and Urban Development Office of the Secretary, Department of Housing and Urban Development HOME INVESTMENT PARTNERSHIPS PROGRAM Allocation Formula Insular Areas Program § 92.65 Funding...

  6. 24 CFR 92.65 - Funding sanctions.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 24 Housing and Urban Development 1 2011-04-01 2011-04-01 false Funding sanctions. 92.65 Section 92.65 Housing and Urban Development Office of the Secretary, Department of Housing and Urban Development HOME INVESTMENT PARTNERSHIPS PROGRAM Allocation Formula Insular Areas Program § 92.65 Funding...

  7. 24 CFR 92.65 - Funding sanctions.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 24 Housing and Urban Development 1 2012-04-01 2012-04-01 false Funding sanctions. 92.65 Section 92.65 Housing and Urban Development Office of the Secretary, Department of Housing and Urban Development HOME INVESTMENT PARTNERSHIPS PROGRAM Allocation Formula Insular Areas Program § 92.65 Funding...

  8. 40 CFR 65.40 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Applicability. 65.40 Section 65.40 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.40 Applicability. (a) The provisions of this subpart and of...

  9. 40 CFR 65.10 - State authority.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 16 2014-07-01 2014-07-01 false State authority. 65.10 Section 65.10 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions § 65.10 State authority. (a) The provisions of this part shall not...

  10. 40 CFR 65.1 - Applicability.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 16 2014-07-01 2014-07-01 false Applicability. 65.1 Section 65.1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions § 65.1 Applicability. (a) The provisions of this subpart apply...

  11. 40 CFR 65.61 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Definitions. 65.61 Section 65.61 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Process Vents § 65.61 Definitions. All terms used in this subpart shall have the...

  12. 40 CFR 65.60 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Applicability. 65.60 Section 65.60 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Process Vents § 65.60 Applicability. The provisions of this subpart and of subpart A...

  13. 40 CFR 65.41 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Definitions. 65.41 Section 65.41 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.41 Definitions. All terms used in this subpart shall have...

  14. 40 CFR 65.1 - Applicability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Applicability. 65.1 Section 65.1 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions § 65.1 Applicability. (a) The provisions of this subpart apply...

  15. 40 CFR 65.5 - Reporting requirements.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 16 2014-07-01 2014-07-01 false Reporting requirements. 65.5 Section 65.5 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions § 65.5 Reporting requirements. (a) Required reports....

  16. 40 CFR 65.47 - Recordkeeping provisions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Recordkeeping provisions. 65.47 Section 65.47 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.47 Recordkeeping provisions. (a)...

  17. 40 CFR 65.10 - State authority.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false State authority. 65.10 Section 65.10 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE General Provisions § 65.10 State authority. (a) The provisions of this part shall not...

  18. 40 CFR 65.48 - Reporting provisions.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 15 2010-07-01 2010-07-01 false Reporting provisions. 65.48 Section 65.48 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.48 Reporting provisions. (a) Notification of initial...

  19. 40 CFR 407.65 - [Reserved

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 30 2013-07-01 2012-07-01 true 407.65 Section 407.65 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS CANNED AND PRESERVED FRUITS AND VEGETABLES PROCESSING POINT SOURCE CATEGORY Canned and Preserved Fruits Subcategory § 407.65...

  20. 40 CFR 407.65 - [Reserved

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 30 2012-07-01 2012-07-01 false 407.65 Section 407.65 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS CANNED AND PRESERVED FRUITS AND VEGETABLES PROCESSING POINT SOURCE CATEGORY Canned and Preserved Fruits Subcategory § 407.65...

  1. 40 CFR 407.65 - [Reserved

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 29 2014-07-01 2012-07-01 true 407.65 Section 407.65 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS CANNED AND PRESERVED FRUITS AND VEGETABLES PROCESSING POINT SOURCE CATEGORY Canned and Preserved Fruits Subcategory § 407.65...

  2. 28 CFR 65.10 - Fund availability.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 2 2010-07-01 2010-07-01 false Fund availability. 65.10 Section 65.10... Allocation of Funds and Other Assistance § 65.10 Fund availability. For the previous fiscal year (FY '85... of the emergency presented; but, in any event, no fund award may exceed the amount...

  3. 47 CFR 65.800 - Rate base.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Rate base. 65.800 Section 65.800 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.800 Rate base. The rate base...

  4. 47 CFR 65.800 - Rate base.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 3 2014-10-01 2014-10-01 false Rate base. 65.800 Section 65.800 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.800 Rate base. The rate base...

  5. 47 CFR 65.800 - Rate base.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Rate base. 65.800 Section 65.800 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.800 Rate base. The rate base...

  6. 47 CFR 65.800 - Rate base.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 3 2012-10-01 2012-10-01 false Rate base. 65.800 Section 65.800 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.800 Rate base. The rate base...

  7. 39 CFR 3055.65 - Special Services.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 39 Postal Service 1 2011-07-01 2011-07-01 false Special Services. 3055.65 Section 3055.65 Postal Service POSTAL REGULATORY COMMISSION PERSONNEL SERVICE PERFORMANCE AND CUSTOMER SATISFACTION REPORTING Periodic Reporting of Service Performance Achievements § 3055.65 Special Services. (a) For each...

  8. 12 CFR 4.65 - Certification.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 12 Banks and Banking 1 2010-01-01 2010-01-01 false Certification. 4.65 Section 4.65 Banks and...; Contracting for Goods and Services § 4.65 Certification. (a) Objective. To preserve the integrity and foster... MWOB certification received from another government agency whose definition of MWOB is...

  9. 14 CFR 65.129 - Performance standards.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Performance standards. 65.129 Section 65.129 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.129...

  10. 14 CFR 65.129 - Performance standards.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Performance standards. 65.129 Section 65.129 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.129...

  11. 28 CFR 90.65 - Evaluation.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 2 2010-07-01 2010-07-01 false Evaluation. 90.65 Section 90.65 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN Arrest Policies in Domestic Violence Cases § 90.65 Evaluation. (a) The National Institute of Justice will conduct evaluations and studies...

  12. 28 CFR 90.65 - Evaluation.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false Evaluation. 90.65 Section 90.65 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN Arrest Policies in Domestic Violence Cases § 90.65 Evaluation. (a) The National Institute of Justice will conduct evaluations and studies...

  13. 28 CFR 90.65 - Evaluation.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 28 Judicial Administration 2 2013-07-01 2013-07-01 false Evaluation. 90.65 Section 90.65 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN Arrest Policies in Domestic Violence Cases § 90.65 Evaluation. (a) The National Institute of Justice will conduct evaluations and studies...

  14. 28 CFR 90.65 - Evaluation.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 28 Judicial Administration 2 2011-07-01 2011-07-01 false Evaluation. 90.65 Section 90.65 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN Arrest Policies in Domestic Violence Cases § 90.65 Evaluation. (a) The National Institute of Justice will conduct evaluations and studies...

  15. 28 CFR 90.65 - Evaluation.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 28 Judicial Administration 2 2012-07-01 2012-07-01 false Evaluation. 90.65 Section 90.65 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) VIOLENCE AGAINST WOMEN Arrest Policies in Domestic Violence Cases § 90.65 Evaluation. (a) The National Institute of Justice will conduct evaluations and studies...

  16. 40 CFR 716.65 - Reporting period.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Reporting period. 716.65 Section 716.65 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT HEALTH AND SAFETY DATA REPORTING General Provisions § 716.65 Reporting period. Unless otherwise...

  17. 40 CFR 716.65 - Reporting period.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Reporting period. 716.65 Section 716.65 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT HEALTH AND SAFETY DATA REPORTING General Provisions § 716.65 Reporting period. Unless otherwise...

  18. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 8 2012-01-01 2012-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  19. 14 CFR 65.59 - Skill requirements.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Skill requirements. 65.59 Section 65.59 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Aircraft Dispatchers § 65.59 Skill requirements....

  20. 45 CFR 2400.65 - Teaching obligation.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 45 Public Welfare 4 2013-10-01 2013-10-01 false Teaching obligation. 2400.65 Section 2400.65... FOUNDATION FELLOWSHIP PROGRAM REQUIREMENTS Special Conditions § 2400.65 Teaching obligation. Upon receiving a Master's degree, each Fellow must teach American history, American government, social studies,...

  1. 45 CFR 2400.65 - Teaching obligation.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 45 Public Welfare 4 2012-10-01 2012-10-01 false Teaching obligation. 2400.65 Section 2400.65... FOUNDATION FELLOWSHIP PROGRAM REQUIREMENTS Special Conditions § 2400.65 Teaching obligation. Upon receiving a Master's degree, each Fellow must teach American history, American government, social studies,...

  2. 45 CFR 2400.65 - Teaching obligation.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 45 Public Welfare 4 2014-10-01 2014-10-01 false Teaching obligation. 2400.65 Section 2400.65... FOUNDATION FELLOWSHIP PROGRAM REQUIREMENTS Special Conditions § 2400.65 Teaching obligation. Upon receiving a Master's degree, each Fellow must teach American history, American government, social studies,...

  3. 7 CFR 65.230 - Production step.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Production step. 65.230 Section 65.230 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards..., PEANUTS, AND GINSENG General Provisions Definitions § 65.230 Production step. Production step means,...

  4. 7 CFR 65.230 - Production step.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Production step. 65.230 Section 65.230 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards..., PEANUTS, AND GINSENG General Provisions Definitions § 65.230 Production step. Production step means,...

  5. 28 CFR 65.31 - Application content.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false Application content. 65.31 Section 65.31 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) EMERGENCY FEDERAL LAW ENFORCEMENT ASSISTANCE Application for Assistance § 65.31 Application content. The Act identifies six factors which the Attorney General will consider in approving...

  6. 28 CFR 65.31 - Application content.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 28 Judicial Administration 2 2013-07-01 2013-07-01 false Application content. 65.31 Section 65.31 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) EMERGENCY FEDERAL LAW ENFORCEMENT ASSISTANCE Application for Assistance § 65.31 Application content. The Act identifies six factors which the Attorney General will consider in approving...

  7. 28 CFR 65.31 - Application content.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 28 Judicial Administration 2 2012-07-01 2012-07-01 false Application content. 65.31 Section 65.31 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) EMERGENCY FEDERAL LAW ENFORCEMENT ASSISTANCE Application for Assistance § 65.31 Application content. The Act identifies six factors which the Attorney General will consider in approving...

  8. 43 CFR 12.65 - Program income.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 43 Public Lands: Interior 1 2011-10-01 2011-10-01 false Program income. 12.65 Section 12.65 Public... to State and Local Governments Post-Award Requirements § 12.65 Program income. (a) General. Grantees are encouraged to earn income to defray program costs. Program income includes income from fees...

  9. 47 CFR 65.450 - Net income.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Net income. 65.450 Section 65.450... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.450 Net income. (a) Net income shall consist of all revenues derived from the provision of interstate telecommunications...

  10. 14 CFR 31.65 - Position lights.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Position lights. 31.65 Section 31.65... STANDARDS: MANNED FREE BALLOONS Design Construction § 31.65 Position lights. (a) If position lights are installed, there must be one steady aviation white position light and one flashing aviation red (or...

  11. 14 CFR 31.65 - Position lights.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Position lights. 31.65 Section 31.65... STANDARDS: MANNED FREE BALLOONS Design Construction § 31.65 Position lights. (a) If position lights are installed, there must be one steady aviation white position light and one flashing aviation red (or...

  12. 14 CFR 31.65 - Position lights.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Position lights. 31.65 Section 31.65... STANDARDS: MANNED FREE BALLOONS Design Construction § 31.65 Position lights. (a) If position lights are installed, there must be one steady aviation white position light and one flashing aviation red (or...

  13. 14 CFR 31.65 - Position lights.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Position lights. 31.65 Section 31.65... STANDARDS: MANNED FREE BALLOONS Design Construction § 31.65 Position lights. (a) If position lights are installed, there must be one steady aviation white position light and one flashing aviation red (or...

  14. 27 CFR 6.65 - General.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false General. 6.65 Section 6.65 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL âTIED-HOUSEâ Unlawful Inducements Extension of Credit § 6.65 General. Extension of...

  15. 14 CFR 65.133 - Seal.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Seal. 65.133 Section 65.133 Aeronautics and...: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.133 Seal. Each certificated parachute rigger must have a seal with an identifying mark prescribed by the Administrator, and a seal press....

  16. 14 CFR 65.133 - Seal.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Seal. 65.133 Section 65.133 Aeronautics and...: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.133 Seal. Each certificated parachute rigger must have a seal with an identifying mark prescribed by the Administrator, and a seal press....

  17. 14 CFR 65.133 - Seal.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Seal. 65.133 Section 65.133 Aeronautics and...: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.133 Seal. Each certificated parachute rigger must have a seal with an identifying mark prescribed by the Administrator, and a seal press....

  18. 14 CFR 65.133 - Seal.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Seal. 65.133 Section 65.133 Aeronautics and...: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.133 Seal. Each certificated parachute rigger must have a seal with an identifying mark prescribed by the Administrator, and a seal press....

  19. 14 CFR 65.133 - Seal.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Seal. 65.133 Section 65.133 Aeronautics and...: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.133 Seal. Each certificated parachute rigger must have a seal with an identifying mark prescribed by the Administrator, and a seal press....

  20. 14 CFR 65.131 - Records.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Records. 65.131 Section 65.131 Aeronautics... CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.131 Records. (a) Each certificated parachute rigger shall keep a record of the packing, maintenance, and alteration of parachutes performed...

  1. 14 CFR 65.131 - Records.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Records. 65.131 Section 65.131 Aeronautics... CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.131 Records. (a) Each certificated parachute rigger shall keep a record of the packing, maintenance, and alteration of parachutes performed...

  2. 14 CFR 65.131 - Records.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 2 2011-01-01 2011-01-01 false Records. 65.131 Section 65.131 Aeronautics... CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Parachute Riggers § 65.131 Records. (a) Each certificated parachute rigger shall keep a record of the packing, maintenance, and alteration of parachutes performed...

  3. 32 CFR 65.5 - Responsibilities.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... members participating in the student loan repayment program in accordance with 10 U.S.C. chapter 109 are... 32 National Defense 1 2014-07-01 2014-07-01 false Responsibilities. 65.5 Section 65.5 National.../11 GI BILL § 65.5 Responsibilities. (a) The Deputy Assistant Secretary of Defense for...

  4. 32 CFR 65.5 - Responsibilities.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    .... (4) Ensure that Service members participating in the student loan repayment program under chapter 109... 32 National Defense 1 2012-07-01 2012-07-01 false Responsibilities. 65.5 Section 65.5 National.../11 GI BILL § 65.5 Responsibilities. (a) The Deputy Under Secretary of Defense for Military...

  5. 7 CFR 987.65 - Other reports.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 8 2010-01-01 2010-01-01 false Other reports. 987.65 Section 987.65 Agriculture... RIVERSIDE COUNTY, CALIFORNIA Order Regulating Handling Reports and Records § 987.65 Other reports. Upon... prescribes, such other information as will enable the Committee to perform its duties and exercise its...

  6. 40 CFR 65.42 - Control requirements.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 16 2013-07-01 2013-07-01 false Control requirements. 65.42 Section 65...) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.42 Control requirements. (a) For each storage vessel to... periods of planned routine maintenance or during a control system malfunction. The owner or operator...

  7. 42 CFR 483.65 - Infection control.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 5 2014-10-01 2014-10-01 false Infection control. 483.65 Section 483.65 Public... Care Facilities § 483.65 Infection control. The facility must establish and maintain an infection control program designed to provide a safe, sanitary, and comfortable environment and to help prevent...

  8. 42 CFR 483.65 - Infection control.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 5 2013-10-01 2013-10-01 false Infection control. 483.65 Section 483.65 Public... Care Facilities § 483.65 Infection control. The facility must establish and maintain an infection control program designed to provide a safe, sanitary, and comfortable environment and to help prevent...

  9. 40 CFR 65.42 - Control requirements.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 16 2014-07-01 2014-07-01 false Control requirements. 65.42 Section 65...) CONSOLIDATED FEDERAL AIR RULE Storage Vessels § 65.42 Control requirements. (a) For each storage vessel to... periods of planned routine maintenance or during a control system malfunction. The owner or operator...

  10. 47 CFR 65.304 - Capital structure.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Capital structure. 65.304 Section 65.304 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.304 Capital structure....

  11. 47 CFR 65.830 - Deducted items.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Deducted items. 65.830 Section 65.830 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.830 Deducted items. (a)...

  12. 47 CFR 65.800 - Rate base.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Rate base. 65.800 Section 65.800 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.800 Rate base. The rate base...

  13. 47 CFR 65.105 - Discovery.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Discovery. 65.105 Section 65.105 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Procedures § 65.105 Discovery. (a)...

  14. 47 CFR 65.450 - Net income.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Net income. 65.450 Section 65.450 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.450 Net income. (a)...

  15. 7 CFR 65.115 - Born.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Born. 65.115 Section 65.115 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards, Inspections..., AND GINSENG General Provisions Definitions § 65.115 Born. Born in the case of chicken means...

  16. 7 CFR 65.115 - Born.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false Born. 65.115 Section 65.115 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards, Inspections..., AND GINSENG General Provisions Definitions § 65.115 Born. Born in the case of chicken means...

  17. 7 CFR 65.115 - Born.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 3 2012-01-01 2012-01-01 false Born. 65.115 Section 65.115 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards, Inspections..., AND GINSENG General Provisions Definitions § 65.115 Born. Born in the case of chicken means...

  18. 7 CFR 65.115 - Born.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false Born. 65.115 Section 65.115 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards, Inspections..., AND GINSENG General Provisions Definitions § 65.115 Born. Born in the case of chicken means...

  19. 7 CFR 65.115 - Born.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Born. 65.115 Section 65.115 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards, Inspections..., AND GINSENG General Provisions Definitions § 65.115 Born. Born in the case of chicken means...

  20. 14 CFR 65.14 - Security disqualification.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Security disqualification. 65.14 Section 65...) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS General § 65.14 Security disqualification. (a... part when the Transportation Security Administration (TSA) has notified the FAA in writing that...

  1. 14 CFR 65.14 - Security disqualification.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 2 2010-01-01 2010-01-01 false Security disqualification. 65.14 Section 65...) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS General § 65.14 Security disqualification. (a... part when the Transportation Security Administration (TSA) has notified the FAA in writing that...

  2. 49 CFR 229.65 - Spring rigging.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Spring rigging. 229.65 Section 229.65....65 Spring rigging. (a) Protective construction or safety hangers shall be provided to prevent spring planks, spring seats or bolsters from dropping to track structure in event of a hanger or spring...

  3. 49 CFR 229.65 - Spring rigging.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Spring rigging. 229.65 Section 229.65....65 Spring rigging. (a) Protective construction or safety hangers shall be provided to prevent spring planks, spring seats or bolsters from dropping to track structure in event of a hanger or spring...

  4. 49 CFR 229.65 - Spring rigging.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Spring rigging. 229.65 Section 229.65....65 Spring rigging. (a) Protective construction or safety hangers shall be provided to prevent spring planks, spring seats or bolsters from dropping to track structure in event of a hanger or spring...

  5. 47 CFR 65.810 - Definitions.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Definitions. 65.810 Section 65.810 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERSTATE RATE OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Rate Base § 65.810 Definitions. As used in...

  6. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 8 2011-01-01 2011-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  7. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 8 2010-01-01 2010-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  8. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 8 2013-01-01 2013-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  9. 7 CFR 953.65 - Effective time.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 8 2014-01-01 2014-01-01 false Effective time. 953.65 Section 953.65 Agriculture... STATES Order Regulating Handling Effective Time and Termination § 953.65 Effective time. The provisions of this subpart shall become effective at such time as the Secretary may declare above his...

  10. 12 CFR 390.65 - Evidence.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 12 Banks and Banking 5 2012-01-01 2012-01-01 false Evidence. 390.65 Section 390.65 Banks and... § 390.65 Evidence. (a) Admissibility. (1) Except as is otherwise set forth in this section, relevant, material, and reliable evidence that is not unduly repetitive is admissible to the fullest...

  11. 14 CFR 65.59 - Skill requirements.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 2 2014-01-01 2014-01-01 false Skill requirements. 65.59 Section 65.59 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Aircraft Dispatchers § 65.59 Skill requirements....

  12. 14 CFR 65.59 - Skill requirements.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 2 2013-01-01 2013-01-01 false Skill requirements. 65.59 Section 65.59 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Aircraft Dispatchers § 65.59 Skill requirements....

  13. 14 CFR 65.59 - Skill requirements.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 2 2012-01-01 2012-01-01 false Skill requirements. 65.59 Section 65.59 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIRMEN CERTIFICATION: AIRMEN OTHER THAN FLIGHT CREWMEMBERS Aircraft Dispatchers § 65.59 Skill requirements....

  14. 28 CFR 65.2 - State Government.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false State Government. 65.2 Section 65.2... Eligible Applicants § 65.2 State Government. In the event that a law enforcement emergency exists throughout a state or part of a state, a state (on behalf of itself or a local unit of government) may...

  15. 28 CFR 65.2 - State Government.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 28 Judicial Administration 2 2012-07-01 2012-07-01 false State Government. 65.2 Section 65.2... Eligible Applicants § 65.2 State Government. In the event that a law enforcement emergency exists throughout a state or part of a state, a state (on behalf of itself or a local unit of government) may...

  16. 28 CFR 65.2 - State Government.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 2 2010-07-01 2010-07-01 false State Government. 65.2 Section 65.2... Eligible Applicants § 65.2 State Government. In the event that a law enforcement emergency exists throughout a state or part of a state, a state (on behalf of itself or a local unit of government) may...

  17. 28 CFR 65.2 - State Government.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 28 Judicial Administration 2 2011-07-01 2011-07-01 false State Government. 65.2 Section 65.2... Eligible Applicants § 65.2 State Government. In the event that a law enforcement emergency exists throughout a state or part of a state, a state (on behalf of itself or a local unit of government) may...

  18. 28 CFR 65.2 - State Government.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 28 Judicial Administration 2 2013-07-01 2013-07-01 false State Government. 65.2 Section 65.2... Eligible Applicants § 65.2 State Government. In the event that a law enforcement emergency exists throughout a state or part of a state, a state (on behalf of itself or a local unit of government) may...

  19. 21 CFR 105.65 - Infant foods.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Infant foods. 105.65 Section 105.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION FOODS FOR SPECIAL DIETARY USE Label Statements § 105.65 Infant foods. (a) If a food (other than...

  20. 28 CFR 65.31 - Application content.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 2 2010-07-01 2010-07-01 false Application content. 65.31 Section 65.31 Judicial Administration DEPARTMENT OF JUSTICE (CONTINUED) EMERGENCY FEDERAL LAW ENFORCEMENT ASSISTANCE Application for Assistance § 65.31 Application content. The Act identifies six factors which the Attorney General will consider in approving...

  1. 14 CFR 31.65 - Position lights.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Position lights. 31.65 Section 31.65... STANDARDS: MANNED FREE BALLOONS Design Construction § 31.65 Position lights. (a) If position lights are installed, there must be one steady aviation white position light and one flashing aviation red (or...

  2. 32 CFR 65.5 - Responsibilities.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 32 National Defense 1 2011-07-01 2011-07-01 false Responsibilities. 65.5 Section 65.5 National Defense Department of Defense OFFICE OF THE SECRETARY OF DEFENSE PERSONNEL, MILITARY AND CIVILIAN POST-9/11 GI BILL § 65.5 Responsibilities. (a) The Deputy Under Secretary of Defense for Military...

  3. 32 CFR 65.5 - Responsibilities.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 32 National Defense 1 2013-07-01 2013-07-01 false Responsibilities. 65.5 Section 65.5 National Defense Department of Defense OFFICE OF THE SECRETARY OF DEFENSE PERSONNEL, MILITARY AND CIVILIAN POST-9/11 GI BILL § 65.5 Responsibilities. (a) The Deputy Under Secretary of Defense for Military...

  4. 7 CFR 65.130 - Consumer package.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Consumer package. 65.130 Section 65.130 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards..., PEANUTS, AND GINSENG General Provisions Definitions § 65.130 Consumer package. Consumer package means...

  5. 7 CFR 65.255 - United States.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 3 2012-01-01 2012-01-01 false United States. 65.255 Section 65.255 Agriculture..., PEANUTS, AND GINSENG General Provisions Definitions § 65.255 United States. United States means the 50... United States....

  6. 7 CFR 65.255 - United States.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false United States. 65.255 Section 65.255 Agriculture..., PEANUTS, AND GINSENG General Provisions Definitions § 65.255 United States. United States means the 50... United States....

  7. 7 CFR 65.255 - United States.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false United States. 65.255 Section 65.255 Agriculture..., PEANUTS, AND GINSENG General Provisions Definitions § 65.255 United States. United States means the 50... United States....

  8. 7 CFR 65.255 - United States.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false United States. 65.255 Section 65.255 Agriculture..., PEANUTS, AND GINSENG General Provisions Definitions § 65.255 United States. United States means the 50... United States....

  9. 7 CFR 65.255 - United States.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false United States. 65.255 Section 65.255 Agriculture..., PEANUTS, AND GINSENG General Provisions Definitions § 65.255 United States. United States means the 50... United States....

  10. 10 CFR 71.65 - Additional requirements.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 10 Energy 2 2010-01-01 2010-01-01 false Additional requirements. 71.65 Section 71.65 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) PACKAGING AND TRANSPORTATION OF RADIOACTIVE MATERIAL Package Approval Standards § 71.65 Additional requirements. The Commission may, by rule, regulation, or...

  11. 7 CFR 65.250 - Slaughter.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false Slaughter. 65.250 Section 65.250 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.250 Slaughter. Slaughter means the point in...

  12. 7 CFR 65.250 - Slaughter.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Slaughter. 65.250 Section 65.250 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.250 Slaughter. Slaughter means the point in...

  13. 7 CFR 65.250 - Slaughter.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Slaughter. 65.250 Section 65.250 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.250 Slaughter. Slaughter means the point in...

  14. 7 CFR 65.250 - Slaughter.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 3 2012-01-01 2012-01-01 false Slaughter. 65.250 Section 65.250 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.250 Slaughter. Slaughter means the point in...

  15. 7 CFR 65.250 - Slaughter.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false Slaughter. 65.250 Section 65.250 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.250 Slaughter. Slaughter means the point in...

  16. 47 CFR 65.450 - Net income.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 3 2014-10-01 2014-10-01 false Net income. 65.450 Section 65.450... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.450 Net income. (a) Net... these services. The calculation of expenses entering into the determination of net income shall...

  17. 47 CFR 65.450 - Net income.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 3 2012-10-01 2012-10-01 false Net income. 65.450 Section 65.450... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.450 Net income. (a) Net... these services. The calculation of expenses entering into the determination of net income shall...

  18. 47 CFR 65.450 - Net income.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Net income. 65.450 Section 65.450... OF RETURN PRESCRIPTION PROCEDURES AND METHODOLOGIES Exchange Carriers § 65.450 Net income. (a) Net... these services. The calculation of expenses entering into the determination of net income shall...

  19. 21 CFR 820.65 - Traceability.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Traceability. 820.65 Section 820.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES QUALITY SYSTEM REGULATION Identification and Traceability § 820.65 Traceability. Each manufacturer of...

  20. 21 CFR 1240.65 - Psittacine birds.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Psittacine birds. 1240.65 Section 1240.65 Food and... DISEASES Specific Administrative Decisions Regarding Interstate Shipments § 1240.65 Psittacine birds. (a) The term psittacine birds shall include all birds commonly known as parrots, Amazons, Mexican...

  1. 21 CFR 1240.65 - Psittacine birds.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Psittacine birds. 1240.65 Section 1240.65 Food and... DISEASES Specific Administrative Decisions Regarding Interstate Shipments § 1240.65 Psittacine birds. (a) The term psittacine birds shall include all birds commonly known as parrots, Amazons, Mexican...

  2. 21 CFR 1240.65 - Psittacine birds.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Psittacine birds. 1240.65 Section 1240.65 Food and... DISEASES Specific Administrative Decisions Regarding Interstate Shipments § 1240.65 Psittacine birds. (a) The term psittacine birds shall include all birds commonly known as parrots, Amazons, Mexican...

  3. 21 CFR 1240.65 - Psittacine birds.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Psittacine birds. 1240.65 Section 1240.65 Food and... DISEASES Specific Administrative Decisions Regarding Interstate Shipments § 1240.65 Psittacine birds. (a) The term psittacine birds shall include all birds commonly known as parrots, Amazons, Mexican...

  4. 21 CFR 1240.65 - Psittacine birds.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Psittacine birds. 1240.65 Section 1240.65 Food and... DISEASES Specific Administrative Decisions Regarding Interstate Shipments § 1240.65 Psittacine birds. (a) The term psittacine birds shall include all birds commonly known as parrots, Amazons, Mexican...

  5. 21 CFR 105.65 - Infant foods.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Infant foods. 105.65 Section 105.65 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION FOODS FOR SPECIAL DIETARY USE Label Statements § 105.65 Infant foods. (a) If a food (other than...

  6. 49 CFR 229.65 - Spring rigging.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Spring rigging. 229.65 Section 229.65....65 Spring rigging. (a) Protective construction or safety hangers shall be provided to prevent spring planks, spring seats or bolsters from dropping to track structure in event of a hanger or spring...

  7. 49 CFR 229.65 - Spring rigging.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Spring rigging. 229.65 Section 229.65....65 Spring rigging. (a) Protective construction or safety hangers shall be provided to prevent spring planks, spring seats or bolsters from dropping to track structure in event of a hanger or spring...

  8. 28 CFR 65.52 - Civil rights.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 28 Judicial Administration 2 2012-07-01 2012-07-01 false Civil rights. 65.52 Section 65.52... Additional Requirements § 65.52 Civil rights. The Act provides that “no person in any state shall on the... funds under the Act are also subject to the provisions of title VI of the Civil Rights Act of...

  9. 28 CFR 65.52 - Civil rights.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 28 Judicial Administration 2 2014-07-01 2014-07-01 false Civil rights. 65.52 Section 65.52... Additional Requirements § 65.52 Civil rights. The Act provides that “no person in any state shall on the... funds under the Act are also subject to the provisions of title VI of the Civil Rights Act of...

  10. 28 CFR 65.52 - Civil rights.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 28 Judicial Administration 2 2010-07-01 2010-07-01 false Civil rights. 65.52 Section 65.52... Additional Requirements § 65.52 Civil rights. The Act provides that “no person in any state shall on the... funds under the Act are also subject to the provisions of title VI of the Civil Rights Act of...

  11. 28 CFR 65.52 - Civil rights.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 28 Judicial Administration 2 2013-07-01 2013-07-01 false Civil rights. 65.52 Section 65.52... Additional Requirements § 65.52 Civil rights. The Act provides that “no person in any state shall on the... funds under the Act are also subject to the provisions of title VI of the Civil Rights Act of...

  12. 28 CFR 65.52 - Civil rights.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 28 Judicial Administration 2 2011-07-01 2011-07-01 false Civil rights. 65.52 Section 65.52... Additional Requirements § 65.52 Civil rights. The Act provides that “no person in any state shall on the... funds under the Act are also subject to the provisions of title VI of the Civil Rights Act of...

  13. 7 CFR 65.165 - Ground goat.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false Ground goat. 65.165 Section 65.165 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.165 Ground goat. Ground goat means...

  14. 7 CFR 65.150 - Goat.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Goat. 65.150 Section 65.150 Agriculture Regulations of..., PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.150 Goat. Goat means meat produced from goats....

  15. 7 CFR 65.165 - Ground goat.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 3 2011-01-01 2011-01-01 false Ground goat. 65.165 Section 65.165 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.165 Ground goat. Ground goat means...

  16. 7 CFR 65.150 - Goat.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 3 2013-01-01 2013-01-01 false Goat. 65.150 Section 65.150 Agriculture Regulations of..., PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.150 Goat. Goat means meat produced from goats....

  17. 7 CFR 65.150 - Goat.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false Goat. 65.150 Section 65.150 Agriculture Regulations of..., PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.150 Goat. Goat means meat produced from goats....

  18. 7 CFR 65.165 - Ground goat.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 3 2014-01-01 2014-01-01 false Ground goat. 65.165 Section 65.165 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.165 Ground goat. Ground goat means...

  19. 22 CFR 40.65 - Smugglers.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Smugglers. 40.65 Section 40.65 Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH NONIMMIGRANTS AND IMMIGRANTS UNDER THE IMMIGRATION AND NATIONALITY ACT, AS AMENDED Illegal Entrants and Immigration Violators § 40.65 Smugglers....

  20. 7 CFR 65.165 - Ground goat.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 3 2012-01-01 2012-01-01 false Ground goat. 65.165 Section 65.165 Agriculture... OF BEEF, PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.165 Ground goat. Ground goat means...