Effects of Gd/Lu ratio on the luminescence properties and garnet phase stability of Ce3+ activated GdxLu3-xAl5O12 single crystals

NASA Astrophysics Data System (ADS)

Bartosiewicz, K.; Babin, V.; Kamada, K.; Yoshikawa, A.; Beitlerova, A.; Nikl, M.

2018-06-01

The luminescence properties of Ce3+ activated (Gd,Lu)3Al5O12 single crystals are investigated as a function of the Gd/Lu ratio with the aim of an improved understanding of the luminescence quenching, energy transfer processes, and garnet phase stability. Upon heavy substitution of Lu with Gd, the target garnet phase becomes thermodynamically unstable and unwanted secondary phase inclusions arise. The secondary phase shows luminescence properties in the UV spectral range. The thermal quenching process of the 5d→4f emission of Ce3+ in the garnet phase is determined by the temperature dependence of the photoluminescence decay time and delayed radiative recombination decays. The results show that the onset of the thermal quenching is moved to lower temperatures with increasing the Gd3+ content. The main mechanism responsible for the luminescence quenching is due to the non-radiative relaxation from 5d1 excited state to 4f ground state of Ce3+. The energy transfer processes between Gd3+ and Ce3+ as well as between secondary and garnet phase are evidenced by the photoluminescence excitation and emission spectra as well as decay kinetic measurements.

The development of Ce3+-activated (Gd,Lu)3Al5O12 garnet solid solutions as efficient yellow-emitting phosphors

NASA Astrophysics Data System (ADS)

Li, Jinkai; Li, Ji-Guang; Liu, Shaohong; Li, Xiaodong; Sun, Xudong; Sakka, Yoshio

2013-10-01

Ce3+-activated Gd3Al5O12 garnet, effectively stabilized by Lu3+ doping, has been developed for new yellow-emitting phosphors. The powder processing of [(Gd1-xLux)1-yCey]3Al5O12 solid solutions was achieved through precursor synthesis via carbonate precipitation, followed by annealing. The resultant (Gd,Lu)AG:Ce3+ phosphor particles exhibit typical yellow emission at ˜570 nm (5d-4f transition of Ce3+) upon blue-light excitation at ˜457 nm (the 2F5/2-5d transition of Ce3+). The quenching concentration of Ce3+ was determined to be ˜1.0 at% (y = 0.01) and the quenching mechanism was suggested to be driven by exchange interactions. The best luminescent [(Gd0.9Lu0.1)0.99Ce0.01]AG phosphor is comparative to the well-known YAG:Ce3+ in emission intensity but has a substantially red-shifted emission band that is desired for warm-white lighting. The effects of processing temperature (1000-1500 °C) on the spectroscopic properties of the phosphors, especially those of Lu3+/Ce3+, were thoroughly investigated and discussed from the centroid position and crystal field splitting of the Ce3+ 5d energy levels.

Optical and scintillation characteristics of Gd2YAl2Ga3O12:Ce and Lu2YAl2Ga3O12:Ce single crystals

NASA Astrophysics Data System (ADS)

Chewpraditkul, Warut; Sakthong, Ongsa; Pattanaboonmee, Nakarin; Chewpraditkul, Weerapong; Szczesniak, Tomasz; Swiderski, Lukasz; Moszynski, Marek; Kamada, Kei; Yoshikawa, Akira; Nikl, Martin

2017-06-01

The optical and scintillation characteristics of Gd2YAl2Ga3O12:Ce and Lu2YAl2Ga3O12:Ce single crystals are investigated. At 662 keV γ-rays, light yield (LY) of 37,900 ph/MeV and energy resolution of 7.0% obtained for Gd2YAl2Ga3O12:Ce are superior to those of 18,900 ph/MeV and 11.5% obtained for Lu2YAl2Ga3O12:Ce. Scintillation decays are measured using the time-correlated single photon counting technique. A fast component decay time of 45 ns with relative intensity of 88% obtained for Lu2YAl2Ga3O12:Ce is superior to that of 50 ns (65%) for Gd2YAl2Ga3O12:Ce. The linear attenuation coefficient at 662 keV γ-rays is also determined and discussed.

Growth and luminescent properties of scintillators based on the single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce garnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zorenko, Yu, E-mail: zorenko@ukw.edu.pl; Laboratory for Optoelectronic Materials, Department of Electronics of Ivan Franko National University of Lviv, 79017 Lviv; Gorbenko, V.

Highlights: • Single crystalline films of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12} garnets at x = 0 ÷ 3.0 were grown by LPE method onto YAG substrates. • Lattice constant of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12}:Ce film and the misfit m between films and YAG substrate changed linearly with increasing of Gd content. • Effective Gd{sup 3+}–Ce{sup 3+} energy transfer occurs in the Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. • Best scintillation light yield is observed in the Lu{sub 3}Al{sub 5}O{sub 12}:Ce and Lu{sub 2.4}Gd{sub 0.6}Al{sub 5}O{sub 12}:Ce films. • Increase of the Gd content in x = 1.5–2.5 range resultsmore » in decreasing the scintillation LY of Lu{sub 3−x}Gd{sub x}Al{sub 5}O{sub 12}:Ce films. - Abstract: The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce{sup 3+} doped Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu{sub 3−}Gd{sub x}Al{sub 5}O{sub 12} SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y{sub 3}Al{sub 5}O{sub 12} (YAG) substrates from the melt-solutions based on PbO-B{sub 2}O{sub 3} flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by α-particles of {sup 239}Pu and {sup 241}Am radioisotopes, were applied for their characterization.« less

Czochralski growth of Gd3(Al5-xGax)O12 (GAGG) single crystals and their scintillation properties

NASA Astrophysics Data System (ADS)

Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Kamada, Kei; Chani, Valery I.; Yoshikawa, Akira

2014-05-01

Ce:Gd3(AlxGa1-x)5O12 (x=2.5/5 and 3/5, Ce:GAGG-2.5 and Ce:GAGG-3) crystals were grown by the Czochralski process in order to reduce cost of the starting materials as compared with conventional Ce:Gd3Al2Ga3O12 (Ce:GAGG-2) crystal which have high light output. Although perovskite phase was detected in Ce:GAGG-3, Ce:GAGG-2.5 had single-phase garnet structure. Solidification fraction for the Ce:GAGG-2.5 growth was 0.52. Optical properties including transmittance, emission, and excitation spectra of 30 samples cut from the Ce:GAGG-2.5 bulk ingot did not depend on their original position along the growth axis. These samples had light outputs of approximately 58,000±3000 photons/MeV. However, scintillation decay times varied from 140 to 200 ns and depended on the position clearly.

Longitudinal spin Seebeck effect in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} prepared on gadolinium gallium garnet (001) by metal organic decomposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asada, H., E-mail: asada@yamaguchi-u.ac.jp; Kuwahara, A.; Sakata, N.

2015-05-07

Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with the Ga composition x = 0, 0.5, and 1.0 are prepared on (001) oriented gadolinium gallium garnet substrates by a metal organic decomposition method. Only (001) peaks are observed in x-ray diffraction patterns for all the films, suggesting that the highly oriented Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films were formed. Increasing Ga composition, the saturation magnetization decreases, and the perpendicular easy axis is enhanced due to the decrease of the shape anisotropy. Longitudinal spin Seebeck effects (LSSEs) in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with a Pt layer of 10 nm in thicknessmore » were investigated. Magnetic field dependence of the thermoelectric voltage caused by the LSSE in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} films indicates the hysteresis loop with the small coercivity reflecting the magnetization curve. The decrease of LSSE voltage in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} is clearly observed with the decrease of Fe composition.« less

Photoluminescence properties of phosphors based on Lu3+-stabilized Gd3Al5O12:Tb3+/Ce3+ garnet solid solutions

NASA Astrophysics Data System (ADS)

Li, Jinkai; Li, Ji-Guang; Li, Xiaodong; Sun, Xudong

2016-12-01

The Gd3Al5O12:Tb/Ce (GdAG:Tb/Ce) garnet solutions effectively stabilized by Lu3+ have been achieved by calcining their precursor at 1300 °C. Detailed characterizations are given to the materials in terms of XRD, FE-SEM, BET, PL/PLE, and fluorescence decay analysis. The occurrence of Gd3+ and Tb3+ transitions from the photoluminescence excitation spectrum monitoring the Ce3+ yellow emission strongly confirmed the efficient Gd3+ → Ce3+ and Tb3+ → Ce3+ energy transfer. The [(Gd0.8Lu0.2)0.99-xCe0.01Tbx]AG (x = 0-0.1) phosphors with good dispersion and uniform particle size exhibit various luminescent properties under different excitation wavelength of 275, 338, and 457 nm, respectively. The photoluminescence comparison indicated that owing to the Gd3+ → Ce3+ and Tb3+ → Ce3+ energy transfer, the best luminescent phosphor [(Gd0.8Lu0.2)0.89Ce0.01 Tb0.1]AG is almost identical to the well-known YAG:Ce, higher than LuAG:Ce in emission intensity, and has a substantially red-shifted emission band that is desired for warm-white lighting. The Tb3+ → Ce3+ energy transfer was suggested to be electric multipolar interactions, and the processes of energy migration among the optically active Gd3+, Tb3+, and Ce3+ ions were discussed in detail. Fluorescence decay analysis found the lifetime for the Ce3+ emission hardly changes with the Tb3+ incorporation. The [(Gd0.8Lu0.2)0.99-xCe0.01Tbx]AG garnets developed in this work may serve as a new type of phosphor that hopefully meets the requirements of various lighting, optical display, and scintillation applications.

Luminescence of Eu:Y3Al5O12, Eu:Lu3Al5O12, and Eu:GdAlO3 Nanocrystals Synthesized by Solution Combustion

NASA Astrophysics Data System (ADS)

Vilejshikova, E. V.; Khort, A. A.; Podbolotov, K. B.; Loiko, P. A.; Shimanski, V. I.; Shashkov, S. N.; Yumashev, K. V.

2017-11-01

Nanocrystals of rare-earth garnets Y3Al5O12 and Lu3Al5O12 and perovskite GdAlO3 highly doped (10-20 at%) with Eu3+ are synthesized by the solution combustion technique and subsequent annealing in air at 800 and 1300oC. Their structure, morphology, and phase composition are studied. These materials exhibit intense red luminescence under UV excitation. Eu:GdAlO3 luminescence has CIE 1931 color coordinates (0.632, 0.368); dominant wavelength, 599.6 nm; and color purity, >99%. Judd-Ofelt parameters, luminescence branching ratios, and lifetimes of the Eu3+ 5D0 state are determined. The luminescence quantum yield for Eu:GdAlO3 (10 at%) reaches 74% with a lifetime of 1.4 ms for the 5D0 state. The synthesized materials are promising for red ceramic phosphors.

Relaxation of the environment of Gd3+ and Eu2+ impurity ions in the Y3Al5O12 garnet

NASA Astrophysics Data System (ADS)

Vazhenin, V. A.; Artyomov, M. Yu.; Potapov, A. P.; Chernyshev, V. A.; Fokin, A. V.; Serdtsev, A. V.

2017-05-01

The second-rank spin Hamiltonian parameters of Gd3+ and Eu2+ orthorhombic centers in crystals of the yttrium aluminum garnet Y3Al5O12 have been analyzed within the framework of the superposition model for the zero-field splitting of the ground state. It has been shown that the description of the experimental data in this model is possible only under the assumption of relaxation of the ligand environment of the paramagnetic impurity.

Highly efficient passive mode locking of Nd:Lu2.9Gd0.1Al5O12 garnet crystal

NASA Astrophysics Data System (ADS)

Di, J. Q.; Xu, X. D.; Xia, C. T.; Tan, W. D.; Zhang, J.; Tang, D. Y.; Li, D. Z.; Zhou, D. H.; Wu, F.; Xu, J.

2013-05-01

Passive mode locking of Nd:Lu2.9Gd0.1Al5O12 (Nd:LuGdAG) crystal lasers was experimentally investigated. Stable mode-locked pulses with pulse widths as short as 9.7 ps were obtained for the Nd:LuGdAG crystal; the corresponding maximum output powers were 0.93 W while the mode-locked slope efficiencies were 43%, among the highest efficiencies ever reported for Nd3+ ps lasers. The results demonstrate that Nd:LuGdAG garnet crystal is a promising gain medium for efficient picosecond laser use.

Recent progress in advanced optical materials based on gadolinium aluminate garnet (Gd3Al5O12)

PubMed Central

Li, Ji-Guang; Sakka, Yoshio

2015-01-01

This review article summarizes the recent achievements in stabilization of the metastable lattice of gadolinium aluminate garnet (Gd3Al5O12, GAG) and the related developments of advanced optical materials, including down-conversion phosphors, up-conversion phosphors, transparent ceramics, and single crystals. Whenever possible, the materials are compared with their better known YAG and LuAG counterparts to demonstrate the merits of the GAG host. It is shown that novel emission features and significantly improved luminescence can be attained for a number of phosphor systems with the more covalent GAG lattice and the efficient energy transfer from Gd3+ to the activator. Ce3+ doped GAG-based single crystals and transparent ceramics are also shown to simultaneously possess the advantages of high theoretical density, fast scintillation decay, and high light yields, and hold great potential as scintillators for a wide range of applications. The unresolved issues are also pointed out. PMID:27877750

Recent progress in advanced optical materials based on gadolinium aluminate garnet (Gd3Al5O12)

NASA Astrophysics Data System (ADS)

Li, Ji-Guang; Sakka, Yoshio

2015-02-01

This review article summarizes the recent achievements in stabilization of the metastable lattice of gadolinium aluminate garnet (Gd3Al5O12, GAG) and the related developments of advanced optical materials, including down-conversion phosphors, up-conversion phosphors, transparent ceramics, and single crystals. Whenever possible, the materials are compared with their better known YAG and LuAG counterparts to demonstrate the merits of the GAG host. It is shown that novel emission features and significantly improved luminescence can be attained for a number of phosphor systems with the more covalent GAG lattice and the efficient energy transfer from Gd3+ to the activator. Ce3+ doped GAG-based single crystals and transparent ceramics are also shown to simultaneously possess the advantages of high theoretical density, fast scintillation decay, and high light yields, and hold great potential as scintillators for a wide range of applications. The unresolved issues are also pointed out.

Significantly different pulse shapes for γ- and α-rays in Gd3Al2Ga3O12:Ce3+ scintillating crystals

NASA Astrophysics Data System (ADS)

Kobayashi, Masaaki; Tamagawa, Yoichi; Tomita, Shougo; Yamamoto, Akihiro; Ogawa, Izumi; Usuki, Yoshiyuki

2012-12-01

We have found that scintillation in Gd3Al2Ga3O12 (GAGG):Ce3+ garnet single crystals has significantly different pulse shapes for 0.662 MeV γ- and 5.47 MeV α-rays. The decay and rise times for γ-rays are smaller by 50% and threefold, respectively, than those for α-rays. Because the GAGG:Ce is a dense, efficient and fast-response scintillator and because it can be grown in large-size single crystals, it should be a promising unified target and a detector material in the study of neutrinoless double beta decay of 160Gd through the use of pulse shape discrimination between the β-ray signals and the α-ray-induced backgrounds.

Anisotropic phase diagram and spin fluctuations of the hyperkagome magnet Gd3Ga5O12 as revealed by sound velocity measurements

NASA Astrophysics Data System (ADS)

Rousseau, Alexandre; Parent, Jean-Michel; Quilliam, Jeffrey A.

2017-08-01

Sound velocity and attenuation measurements on the frustrated garnet material Gd3Ga5O12 (GGG) are presented as a function of field and temperature, with two different magnetic field orientations: [100 ] and [110 ] . We demonstrate that the phase diagram is highly anisotropic, with two distinct field-induced ordered phases for H ||[110 ] and only one for H ||[100 ] . Extensive lattice softening is found to occur at low fields, which can be associated with spin fluctuations. However, deep within the spin liquid phase a low-temperature stiffening of the lattice and reduced attenuation provide evidence for a spin gap which may be related to short-range antiferromagnetic correlations over minimal ten-spin loops.

Energy transfer and radiative recombination processes in (Gd, Lu)3Ga3Al2O12:Pr3+ scintillators

NASA Astrophysics Data System (ADS)

Wu, Yuntao; Ren, Guohao

2013-10-01

(GdxLu3-x)Ga3Al2O12:0.3 at.%Pr (x = 0.025, 0.05, 0.1, 0.2, 0.4, 0.6) (GLGAG:Pr) polycrystalline powders are prepared by solid-state reaction method. To better understand the luminescence mechanism, the optical diffuse reflectance, photoluminescence emission and excitation, X-ray excited luminescence spectra and decay kinetics of GLGAG:Pr were investigated in detailed, allowing the determination of energy transfer from 5d state of Pr3+ to 4f state of Gd3+, and the non-radiative relaxation from 5d to 4f state of Pr3+. Besides, the former process plays more negative role in the emission quenching of GLGAG:Pr than later one. Pr3+ ion is regarded as an ineffective activation ion in Gd-based multicomponent aluminate garnets. In addition, the wavelength-resolved thermoluminescence spectra of GLGAG:Pr were studied after UV and X-ray irradiation. It is revealed that the localized recombination processes from electron traps to lower lying 4f levels of Pr3+ occurs without populating the higher 5d levels of Pr3+.

Luminescence and scintillation characteristics of (GdxY3-x)Al2Ga3O12:Ce (x = 1,2,3) single crystals

NASA Astrophysics Data System (ADS)

Chewpraditkul, Warut; Pattanaboonmee, Nakarin; Sakthong, Ongsa; Chewpraditkul, Weerapong; Szczesniak, Tomasz; Moszynski, Marek; Kamada, Kei; Yoshikawa, Akira; Nikl, Martin

2018-02-01

The luminescence and scintillation characteristics of Czochralski-grown (GdxY3-x)Al2Ga3O12:Ce (x = 1,2,3) single crystals are presented. With increasing Gd content in this garnet host, the 5d2 absorption band was blue-shifted while the 5d1 absorption and 5d1 → 4f emission bands were red-shifted due to an increase in the crystal field splitting of the 5d levels. In addition, the luminescence quenching temperature of the Ce3+emission and activation energy for thermal quenching decreased with increasing Gd content. The Gd3+ → Ce3+ energy transfer was evidenced by photoluminescence excitation spectra of Ce3+ emission. At 662 keV γ - rays, the light yield (LY) of 48,600 ph/MeV and energy resolution of 6.5% was measured for a Gd3Al2Ga3O12:Ce crystal. Scintillation decay measurements were performed using the time-correlated single photon counting technique. Superior time resolution of Gd3Al2Ga3O12:Ce is due to its high LY and fast scintillation response. The total mass attenuation coefficients at 60 and 662 keV γ - rays were also determined.

Effect of Ga3+ and Gd3+ ions substitution on the structural and optical properties of Ce3+ -doped yttrium aluminium garnet phosphor nanopowders.

PubMed

Wako, A H; Dejene, F B; Swart, H C

2016-11-01

The structural and optical properties of commercially obtained Y 3 Al 5 O 12 :Ce 3 + phosphor were investigated by replacing Al 3 + with Ga 3 + and Y 3 + with Gd 3 + in the Y 3 Al 5 O 12 :Ce 3 + structure to form Y 3 (Al,Ga) 5 O 12 :Ce 3 + and (Y,Gd) 3 Al 5 O 12 :Ce 3 + . X-Ray diffraction (XRD) results showed slight 2-theta peak shifts to lower angles when Ga 3 + was used and to higher angles when Gd 3 + was used, with respect to peaks from Y 3 Al 5 O 12 :Ce 3 + and JCPDS card no. 73-1370. This could be attributed to induced crystal-field effects due to the different ionic sizes of Ga 3 + and Gd 3 + compared with Al 3 + and Y 3 + . The photoluminescence (PL) spectra showed broad excitation from 350 to 550 nm with a maximum at 472 nm, and broad emission bands from 500 to 650 nm, centred at 578 nm for Y 3 Al 5 O 12 :Ce 3 + arising from the 5d → 4f transition of Ce 3 + . PL revealed a blue shift for Ga 3 + substitution and a red shift for Gd 3 + substitution. UV-Vis showed two absorption peaks at 357 and 457 nm for Y 3 Al 5 O 12 :Ce 3 + , with peaks shifting to 432 nm for Ga 3 + and 460 nm for Gd 3 + substitutions. Changes in the trap levels or in the depth and number of traps due to Ce 3 + were analysed using thermoluminescence (TL) spectroscopy. This revealed the existence of shallow and deep traps. It was observed that Ga 3 + substitution contributes to the shallowest traps at 74 °C and fewer deep traps at 163 °C, followed by Gd 3 + with shallow traps at 87 °C and deep traps at 146 °C. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Fujimoto, Yutaka; Yamaji, Akihiro; Kurosawa, Shunsuke; Pejchal, Jan; Sugiyama, Makoto; Wakahara, Shingo; Futami, Yoshisuke; Yokota, Yuui; Kamada, Kei; Yubuta, Kunio; Shishido, Toetsu; Nikl, Martin

2013-09-01

Multicomponent garnet Ce:Gd3(Ga,Al)5O12 (Ce:GAGG) single crystals show very high light yield with reasonably fast scintillation response. Therefore, they can be promising scintillators for gamma-ray detection. However, in the decay curve a very slow component does exist. Therefore, it is necessary to optimize further the crystal growth technology of Ce:GAGG. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1-4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.

Rare-Earth Ion-Host Lattice Interactions: 15. Analysis of the Spectra of Nd3+ in Gd3Sc2Ga3O12.

DTIC Science & Technology

1984-05-01

Luminescence of Cr3+ Ions in Gadolinium Gallium and Gadolinium Scandium Gallium Garnet CT’stals, Soy. J. Quant. Electron. 12 (1982), 1124. 6M. Dutoit, J. C...Shcherbakov, Absolute Quantum Efficiency of the Luminescence of Cr3+ Ions in Gadolinium Gallium and Gadolinium Scandium Gallium Garnet Crystals, Soy. J...HDL Project: 324332 19. KEY WORDS (Continue on reverse side it necessary end Identify by block number) Rare earth Mixed garnet Spectra Laser Judd-Ofelt

Effect of Al/Ga substitution on the structural and luminescence properties of Y3(Al1-xGax)5O12: Ce3+ phosphors

NASA Astrophysics Data System (ADS)

Fu, Sheng; Tan, Jin; Bai, Xin; Yang, Shanjie; You, Lei; Du, Zhengkang

2018-01-01

As candidates for display and lighting materials, a series of gallium-substituted cerium-doped yttrium aluminum garnet (Y3(GaxAl1-x)5O12: Ce3+) phosphors were synthesized by high temperature solid-state reaction. The phases, morphology, luminescence spectra and thermal stability of the phosphors were investigated. The volatilization of Ga2O3 induces the constituents out of stoichiometric ratio and different impurities in the system. The excitation and emission spectra occur red shift (339 nm - 351 nm) and blue shift (465 nm - 437 nm), and blue shift (541 nm - 517 nm), respectively. The spectra have no further blue shift and the luminescence intensity decrease with x over 0.4. Combining crystal structure with PL spectrum, the distortion of dodecahedron and crystal field splitting of 5d level of Ce3+ are influenced by Ga3+ in octahedral coordination polyhedron rather than tetrahedron. The crystalline perfection and Ga3+ occupying the tetrahedron induce less garnet phase formation, more impurities and the 5d level located in the conductive bands, thus accounting for the x = 0.4 turning points of the PL and PLE intensity. Based on the thermal quenching and CIE, the Y3(GaxAl1-x)5O12: Ce3+0.06 phosphors have great potential for use on the w-LED.

Optical and scintillation properties of Nd-doped complex garnet

NASA Astrophysics Data System (ADS)

Yanagida, Takayuki; Sato, Hiroki

2014-12-01

Nd 1% doped complex garnet scintillators were prepared by Furukawa and their optical and scintillation properties were investigated on a comparison with previously reported Nd-doped YAG. Chemical compositions of newly developed complex garnets were Lu2Y1Al5O12, Lu2Y1Ga3Al2O12, Lu2Gd1Al5O12, Lu2Gd1Ga3Al2O12, Gd1Y2Al5O12, Gd1Y2Ga3Al2O12, and Gd3Ga3Al2O12. They all showed 50-80% transmittance from ultraviolet to near infrared wavelengths with several absorption bands due to Gd3+ or Nd3+ 4f-4f transition. In X-ray induced radioluminescence spectra, all samples exhibited intense lines at 310 nm due to Gd3+ or 400 nm due to Nd3+ depending on their chemical composition. Among them, the highest scintillation light yield was achieved by Lu2Y1Al5O12. Typical scintillation decay times of them resulted 1.5-3 μs. Thermally stimulated glow curve after 1 Gy exposure and X-ray induced afterglow were also investigated.

Composition-property relationships in (Gd3-xLux)(GayAl5-y)O12:Ce (x = 0, 1, 2, 3 and y = 0, 1, 2, 3, 4) multicomponent garnet scintillators

NASA Astrophysics Data System (ADS)

Luo, Jialiang; Wu, Yuntao; Zhang, Guoqing; Zhang, Huaijin; Ren, Guohao

2013-12-01

The (LuxGd3-x)(GayAl5-y)O12:Ce (x = 0, 1, 2, 3 and y = 0, 1, 2, 3, 4) scintillating polycrystalline powders were prepared by high temperature solid state reaction method. A pure cubic phase was confirmed in all samples by X-ray diffraction (XRD). X-ray excited luminescence (XEL), photoluminescence excitation and emission spectra were employed to study the influence of Gd3+-Ga3+ admixture on the luminescent mechanism of Ce3+ as well as the energy transfer from Gd3+ to Ce3+. The band-gap structures with varying Gd3+ and Ga3+ content were constructed to understand the luminescence behaviors. In addition, thermoluminescence spectra (TL) were utilized to identify the moving of conduction band (CB) by monitoring the shift of the corresponding TL peaks. Finally, it was found that incorporation of 40 mol% (y = 2) Ga3+ and 33.3-66.7 mol% (x = 1-2) Gd3+ could secure enough energy-separation between CB and 5d1 of Ce3+ avoiding thermal ionization effect at utmost, and bury the antisite defect traps into CB, and in turn achieving the optimum scintillation efficiency.

The development of new phosphors of Tb3+/Eu3+ co-doped Gd3Al5O12 with tunable emission

NASA Astrophysics Data System (ADS)

Teng, Xin; Wang, Wenzhi; Cao, Zhentao; Li, Jinkai; Duan, Guangbin; Liu, Zongming

2017-07-01

The gadolinium aluminum garnets Gd3Al5O12 (GdAG) activated with Tb3+/Eu3+ were successfully prepared via co-precipitation method at 1500 °C in this work. The crystal structure stabilization, elements analysis, microphotograph, PL/PLE spectra, decay behavior and quantum efficiency were discussed in detail. The metastable GdAG compounds been effectively stabilized by doping with smaller 10 at.% Tb3+, which then allows the development of new phosphors of (Gd0.9-xTb0.1Eux)3Al5O12 (GdAG:Tb3+/Eu3+, x = 0-0.03) for opto-functionality explorations. The PLE/PL spectra displays that the strongest PLE peak was located at ∼276 nm, which overlaps the 8S7/2 → 6IJ transition of Gd3+. Under 276 nm excitation, the phosphors exhibited both Tb3+ and Eu3+ emissions at 548 nm (green, 5D4 → 7F5 transition of Tb3+) and 592 nm (orange-red, 5D0 → 7F1 transition of Eu3+), respectively. The emission intensities of Tb3+ and Eu3+ remarkably varied with the Eu3+ incorporation. As a consequence, the emission color can be readily tuned from approximately green to orange-red. Fluorescence decay analysis found that the lifetime for the Tb3+ emission rapidly decreased conforming to the Tb3+ → Eu3+ energy transfer, and the energy transfer efficiency was calculated. Owing to the Gd3+ → Eu3+ and Gd3+ → Tb3+ energy transfer, the emission intensities of Tb3+ and Eu3+ in (Gd0.9-xTb0.1Eux)AG phosphor were higher than (Y0.87Tb0.1Eu0.03)AG and (Lu0.87Tb0.1Eu0.03)AG system. The (Gd0.9-xTb0.1Eux)AG garnet phosphors developed in this work may serve as a new type of phosphor which hopefully meets the requirements of various lighting and optical display applications.

Transparent garnet ceramic scintillators for gamma-ray detection

NASA Astrophysics Data System (ADS)

Wang, Yimin; Baldoni, Gary; Rhodes, William H.; Brecher, Charles; Shah, Ananya; Shirwadkar, Urmila; Glodo, Jarek; Cherepy, Nerine; Payne, Stephen

2012-10-01

Lanthanide gallium/aluminum-based garnets have a great potential as host structures for scintillation materials for medical imaging. Particularly attractive features are their high density, chemical radiation stability and more importantly, their cubic structure and isotropic optical properties, which allow them to be fabricated into fully transparent, highperformance polycrystalline optical ceramics. Lutetium/gadolinium aluminum/gallium garnets (described by formulas ((Gd,Lu)3(Al,Ga)5O12:Ce, Gd3(Al,Ga)5O12:Ce and Lu3Al5O12:Pr)) feature high effective atomic number and good scintillation properties, which make them particularly attractive for Positron Emission Tomography (PET) and other γ- ray detection applications. The ceramic processing route offers an attractive alternative to single crystal growth for obtaining scintillator materials at relatively low temperatures and at a reasonable cost, with flexibility in dimension control as well as activator concentration adjustment. In this study, optically transparent polycrystalline ceramics mentioned above were prepared by the sintering-HIP approach, employing nano-sized starting powders. The properties and microstructures of the ceramics were controlled by varying the processing parameters during consolidation. Single-phase, high-density, transparent specimens were obtained after sintering followed by a pressure-assisted densification process, i.e. hot-isostatic-pressing. The transparent ceramics displayed high contact and distance transparency as well as high light yield as high as 60,000-65,000 ph/MeV under gamma-ray excitation, which is about 2 times that of a LSO:Ce single crystal. The excellent scintillation and optical properties make these materials promising candidates for medical imaging and γ-ray detection applications.

Simultaneous dual-wavelength laser operation at 937 and 1062 nm in Nd3+:Gd3Ga5O12

NASA Astrophysics Data System (ADS)

Gao, F.; Sun, G. C.; Li, Y. D.; Dong, Y.; Li, S. T.

2013-08-01

Diode-end-pumped continuous-wave (cw) simultaneous dual-wavelength laser operation at 937 and 1062 nm in a single Nd3+:Gd3Ga5O12 (Nd:GGG) crystal was demonstrated. A total output power of 1.12 W at the two fundamental wavelengths was achieved at incident pump power of 17.6 W. The optical-to-optical conversion was up to 6.4% with respect to the incident pump power. To the best of our knowledge, this is first work on cw simultaneous dual-wavelength operation at 937 and 1062 nm in Nd:GGG crystal.

Growth of Nd doped (Lu, Gd)3(Ga, Al)5O12 single crystal by the micro pulling down method and their scintillation properties

NASA Astrophysics Data System (ADS)

Kamada, Kei; Kurosawa, Shunsuke; Yamaji, Akihiro; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-03-01

Nd 1 mol% doped (Lu, Gd)3(Ga, Al)5O12 (LGGAG) single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Nd1%:Lu3Al5O12 showed the highest light output of around 8200 photons/MeV among the grown crystals. Scintillation decay time of Nd:Y3Al5O12 was 1.32 μs (36%) 2.02 μs (64%). Nd:Lu3Ga3Al2O12 was relatively high dense scintillator of 7.38 g/cm3 with good light yield of 6800 photons/MeV and scintillation decay time of 0.20 μs (5%) 2.60 μs (95%).

Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

NASA Astrophysics Data System (ADS)

Grigorjeva, L.; Kamada, K.; Nikl, M.; Yoshikawa, A.; Zazubovich, S.; Zolotarjovs, A.

2018-01-01

Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9-500 K temperature range. The spectra of the afterglow, photoluminescence, radioluminescence, and thermally stimulated luminescence (TSL) of each crystal coincide. The increase of the Ga content results in the high-energy shift of the spectra while the radioluminescence intensity at 9 K remains practically constant up to x = 4. No Ce3+ emission is observed in case of x = 5. The total TSL intensity drastically increases, reaches the maximum value around x = 2-3, and then decreases due to the thermal quenching of the Ce3+ emission. The TSL glow curve maxima are gradually shifting to lower temperatures, and the dependence of the maxima positions and the corresponding trap depths on the Ga content is close to linear. However, the activation energy of the TSL peaks creation under irradiation of the crystals in the 4f - 5d1 absorption band of Ce3+ decreases drastically with the increasing Ga content (especially in the range of x = 1-2), and this dependence is found to be strongly nonlinear. Possible reasons of the nonlinearity are discussed.

Band-gap modulation via gallium substitution in cerium doped gadolinium aluminum garnet using a mixed fuel combustion approach

NASA Astrophysics Data System (ADS)

Tyagi, Mohit; Pitale, Shreyas S.; Ghosh, Manoranjan; Shinde, Seema

2014-04-01

Cerium doped Gadolinium garnets (Gd3AlxGa5-xO12 where 0≤x≤5) are synthesized via combustion synthesis using mixture of urea and glycine fuels. A 4h Post annealing at 1400 oC is found to be necessary for pure phase formation. Lattice spacing variation as a result of partial or total Ga substitution at Al site was mapped by X-ray diffraction. Photoluminescence emission of Ce shifts as a consequence of Ga substitution and therefore suggests a local re-adjustment of crystal field around activator site.

Crystal Growth and Scintillation Properties of Ce Doped Gd3Ga,Al5O12 Single Crystals

NASA Astrophysics Data System (ADS)

Kamada, Kei; Yanagida, Takayuki; Pejchal, Jan; Nikl, Martin; Endo, Takanori; Tsutsumi, Kousuke; Fujimoto, Yutaka; Fukabori, Akihiro; Yoshikawa, Akira

2012-10-01

Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. Ce3+ 5d-4f emission within 520-530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with 3×3×1 mm size showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

Updating the phase diagram of the archetypal frustrated magnet Gd3Ga5O12

NASA Astrophysics Data System (ADS)

Deen, P. P.; Florea, O.; Lhotel, E.; Jacobsen, H.

2015-01-01

The applied magnetic field and temperature phase diagram of the archetypal frustrated magnet, Gd3Ga5O12 , has been reinvestigated using single-crystal magnetometry and polarized neutron diffraction. The updated phase diagram is substantially more complicated than previously reported and can be understood in terms of competing interactions with loops of spins, trimers, and decagons, in addition to competition and interplay between antiferromagnetic, incommensurate, and ferromagnetic order. Several additional distinct phase boundaries are presented. The phase diagram centers around a multiphase convergence to a single point at 0.9 T and ˜0.35 K, below which, in temperature, a very narrow magnetically disordered region exists. These data illustrate the richness and diversity that arise from frustrated exchange on the three-dimensional hyperkagome lattice.

Band-gap modulation via gallium substitution in cerium doped gadolinium aluminum garnet using a mixed fuel combustion approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, Mohit; Pitale, Shreyas S.; Ghosh, Manoranjan

2014-04-24

Cerium doped Gadolinium garnets (Gd{sub 3}Al{sub x}Ga{sub 5−x}O{sub 12} where 0≤x≤5) are synthesized via combustion synthesis using mixture of urea and glycine fuels. A 4h Post annealing at 1400 oC is found to be necessary for pure phase formation. Lattice spacing variation as a result of partial or total Ga substitution at Al site was mapped by X-ray diffraction. Photoluminescence emission of Ce shifts as a consequence of Ga substitution and therefore suggests a local re-adjustment of crystal field around activator site.

Mg,Ce co-doped Lu2Gd1(Ga,Al)5O12 by micro-pulling down method and their luminescence properties

NASA Astrophysics Data System (ADS)

Kamada, Kei; Yamaguchi, Hiroaki; Yoshino, Masao; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Pejchal, Jan; Nikl, Martin; Yoshikawa, Akira

2018-04-01

The effects of Mg co-doping on the scintillation properties of Ce:Lu2Gd1(Ga,Al)5O12 (LGGAG) single crystals with different Ga/Al ratios were investigated. Mg co-doped and non co-doped Ce:LGGAG single crystals were grown by the micro-pulling down (µ-PD) method and then cut, polished and annealed for each measurement. Absorption spectra, radioluminescence (RL) spectra, pulse height spectra, and scintillation decay were measured to reveal the effect of Mg co-doping. Ce4+ charge transfer (CT) absorption band peaking at ∼260 nm was observed in Mg co-doped samples, which is in good agreement with previous reports for the Ce4+ CT absorption band in other garnet-based crystals. The scintillation decay time tended to be accelerated and the light yield tended to be decreased by Mg co-doping at higher Ga concentrations.

Absence of magnetic ordering and field-induced phase diagram in the gadolinium aluminum garnet

NASA Astrophysics Data System (ADS)

Florea, O.; Lhotel, E.; Jacobsen, H.; Knee, C. S.; Deen, P. P.

2017-12-01

The robustness of spin liquids with respect to small perturbations, and the way magnetic frustration can be lifted by slight changes in the balance between competing magnetic interactions, remains a rich and open issue. We address this question through the study of the gadolinium aluminum garnet Gd3Al5O12 , a related compound to the extensively studied Gd3Ga5O12 . We report on its magnetic properties at very low temperatures. We show that despite a freezing at about 300 mK, no magnetic transition is observed, suggesting the presence of a spin-liquid state down to the lowest temperatures, similarly to Gd3Ga5O12 , in spite of a larger ratio between exchange and dipolar interactions. Finally, the phase diagram as a function of field and temperature is strongly reminiscent of the one reported in Gd3Ga5O12 . This study reveals the robust nature of the spin-liquid phase for Gd ions on the garnet lattice, in stark contrast to Gd ions on the pyrochlore lattice for which a slight perturbation drives the compound into a range of magnetically ordered states.

Synthesis of crystalline Ce-activated garnet phosphor powders and technique to characterize their scintillation light yield

NASA Astrophysics Data System (ADS)

Gordienko, E.; Fedorov, A.; Radiuk, E.; Mechinsky, V.; Dosovitskiy, G.; Vashchenkova, E.; Kuznetsova, D.; Retivov, V.; Dosovitskiy, A.; Korjik, M.; Sandu, R.

2018-04-01

This work reports on a process of preparation of garnet phosphor powders and a technique for light yield evaluation of strongly light scattering samples. Powders of scintillation compounds could be used as individual materials or as samples for express tests of scintillation properties. However, estimation of their light yield (LY) is complicated by strong light scattering of this kind of materials. Ce3+-activated yttrium-aluminum and gallium-gadolinium-aluminum garnet phosphor powders, Y3Al5O12 (YAG:Ce) and Gd3Ga3Al2O12 (GGAG:Ce), were obtained using a modified coprecipitation technique. Ga tends to residue in mother liquor in ammonia media, but the modification allows to avoid the loss of components. We propose an approach for sample preparation and LY measurement setup with alpha particles excitation, allowing to decrease light scattering influence and to estimate a light yield of powder samples. This approach is used to evaluate the obtained powders.

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onbasli, M. C., E-mail: onbasli@mit.edu; Kim, D. H.; Ross, C. A.

2014-10-01

Yttrium iron garnet (YIG, Y {sub 3}Fe{sub 5}O{sub 12}) films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd{sub 3}Ga{sub 5}O{sub 12}) substrates with (100) orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe), near-bulk room temperature saturation moments (∼135 emu cm{sup −3}), in-plane easy axis, and damping parameters as low as 2.2 × 10{sup −4}. These high quality YIG thin films are useful in the investigation ofmore » the origins of novel magnetic phenomena and magnetization dynamics.« less

Effective lattice stabilization of gadolinium aluminate garnet (GdAG) via Lu3+ doping and development of highly efficient (Gd,Lu)AG:Eu3+ red phosphors

PubMed Central

Li, Jinkai; Li, Ji-Guang; Zhang, Zhongjie; Wu, Xiaoli; Liu, Shaohong; Li, Xiaodong; Sun, Xudong; Sakka, Yoshio

2012-01-01

The metastable garnet lattice of Gd3Al5O12 is stabilized by doping with smaller Lu3+, which then allows an effective incorporation of larger Eu3+ activators. The [(Gd1−xLux)1−yEuy]3Al5O12 (x = 0.1–0.5, y = 0.01–0.09) garnet solid solutions, calcined from their precursors synthesized via carbonate coprecipitation, exhibit strong luminescence at 591 nm (the 5D0 → 7F1 magnetic dipole transition of Eu3+) upon UV excitation into the charge transfer band (CTB) at ∼239 nm, with CIE chromaticity coordinates of x = 0.620 and y = 0.380 (orange-red). The quenching concentration of Eu3+ was estimated at ∼5 at.% (y = 0.05), and the quenching was attributed to exchange interactions. Partial replacement of Gd3+ with Lu3+ up to 50 at.% (x = 0.5) while keeping Eu3+ at the optimal content of 5 at.% does not significantly alter the peak positions of the CTB and 5D0 → 7F1 emission bands but slightly weakens both bands owing to the higher electronegativity of Lu3+. The effects of processing temperature (1000–1500 °C) and Lu/Eu contents on the intensity, quantum efficiency, lifetime and asymmetry factor of luminescence were thoroughly investigated. The [(Gd0.7Lu0.3)0.95Eu0.05]3Al5O12 phosphor processed at 1500 °C exhibits a high internal quantum efficiency of ∼83.2% under 239 nm excitation, which, in combination with the high theoretical density, favors its use as a new type of photoluminescent and scintillation material. PMID:27877495

Luminescence and light yield of (Gd2Y)(Ga3Al2)O12:Pr3+ single crystal scintillators

NASA Astrophysics Data System (ADS)

Lertloypanyachai, Prapon; Pathumrangsan, Nichakorn; Sreebunpeng, Krittiya; Pattanaboonmee, Nakarin; Chewpraditkul, Weerapong; Yoshikawa, Akira; Kamada, Kei; Nikl, Martin

2017-06-01

Praseodymium-doped (Gd2Y)(Ga3Al2)O12 (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr3+ and Gd3+ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr3+ to 4f state of Gd3+ together with the concentration quenching in the Gd3+-sublattice.

Temperature and pressure dependence of the optical properties of Cr3+-doped Gd3Ga5O12 nanoparticles.

PubMed

Martín-Rodríguez, R; Valiente, R; Rodríguez, F; Bettinelli, M

2011-07-01

Since the crystal-field strength at the Cr(3+) site is very close to the excited-state crossover (ESCO), this work investigates the optical properties of Cr(3+)-doped Gd(3)Ga(5)O(12) (GGG) nanoparticles as a function of temperature and pressure in order to establish the effect of the ESCO on the optical behaviour of nanocrystalline GGG. Luminescence, time-resolved emission and lifetime measurements have been performed on GGG:0.5% Cr(3+) nanoparticles in the 25-300 K temperature range, as well as under hydrostatic pressure up to 20 GPa. We show how low temperature and high pressure progressively transforms Cr(3+)(4)T(2) --> (4)A(2) broadband emission into a ruby-like (2)E --> (4)A(2) luminescence. This behaviour together with the lifetime dependence on pressure and temperature are explained on the basis of the spin-orbit interaction between the (4)T(2) and (2)E states of Cr(3+).

Scintillation properties of the Ce-doped multicomponent garnet epitaxial films

NASA Astrophysics Data System (ADS)

Prusa, P.; Kucera, M.; Mares, J. A.; Hanus, M.; Beitlerova, A.; Onderisinova, Z.; Nikl, M.

2013-10-01

(Lu,Y,Gd)3(Al,Ga)5O12:Ce garnet scintillator single crystalline films were grown onto LuAG, YAG and GGG substrates by liquid phase epitaxy method. Absorption, radioluminescence spectra and photoluminescence excitation, emission spectra, and decay kinetics were measured. Photoelectron yield, its dependence on amplifier shaping time and energy resolution were determined to evaluate scintillation performance. Most of the samples exhibited strong UV emission caused by trapped excitons and/or Gd3+ 4f-4f transition. However, emission spectrum of the best performing Gd2YAl5O12:Ce is dominated by the Ce3+ fast 5d-4f luminescence. This sample has outperformed photoelectron yield of all the garnet films studied so far.

Composition engineering of single crystalline films based on the multicomponent garnet compounds

NASA Astrophysics Data System (ADS)

Zorenko, Yuriy; Gorbenko, Vitalii; Zorenko, Tetiana; Paprocki, Kazimierz; Bilski, Paweł; Twardak, Anna; Voznyak, Taras; Sidletskiy, Oleg; Gerasimov, Yaroslav; Gryniov, Boris; Fedorov, Alexandr

2016-11-01

The paper demonstrates our last achievement in development of the novel scintillating screens based on single crystalline films (SCF) of Ce doped multicomponent garnets using the Liquid Phase Epitaxy (LPE) method. We report in this work the optimized content and excellent scintillation properties of SCF of Lu3-xGdxAl5-yGayO12, Lu3-xTbxAl5-yGayO12 and TbxGdxAl5-yGayO12 garnet compounds grown by the LPE method from PbOsbnd B2O3 based melt-solution onto Gd3Al2.5Ga2.5O12 and YAG substrates. We also show that the Tb1.5Gd1.5Al2.5Ga2.5O12:Ce SCF possess the highest light yield (LY) in comparison with all ever grown garnet SCF scintillators. Namely, the LY of these SCF exceeds by 3.8 and 1.85 times the LY values of the best samples of YAG:Ce and LuAG:Ce SCF scintillators, respectively. The SCF samples of the mentioned compounds show low thermoluminescence in the above room temperature range and relatively fast scintillation decay time t1/e in the 180-200 ns range.

Bi-substituted iron garnet films for one-dimensional magneto-photonic crystals: Synthesis and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaposhnikov, A.N.; Karavainikov, A.V.; Prokopov, A.R.

2012-06-15

Graphical abstract: Faraday hysteresis loops for Bi{sub 1.0}Y{sub 0.5}Gd{sub 1.5}Fe{sub 4.2}Al{sub 0.8}O{sub 12} film on glass-ceramic substrate (a), Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} film on gallium–gadolinium garnet (b) and for glass-ceramic/SiO{sub 2}/Bi{sub 1.0}Y{sub 0.5}Gd{sub 1.5}Fe{sub 4.2}Al{sub 0.8}O{sub 12}/Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} structure (c). Highlights: ► Bismuth-substituted iron garnet films as magneto-optical layers in magneto-photonic crystals. ► It is impossible to crystallize the films with high Bi content on amorphous substrates. ► The crystallization of the films can be achieved by their deposition on buffer layer with low bismuth content. -- Abstract: The crystallization processes in Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{submore » 12}, Bi{sub 2.5}Gd{sub 0.5}Fe{sub 3.8}Al{sub 1.2}O{sub 12}, Bi{sub 1.5}Gd{sub 1.5}Fe{sub 4.5}Al{sub 0.5}O{sub 12} and Bi{sub 1.0}Y{sub 0.5}Gd{sub 1.5}Fe{sub 4.2}Al{sub 0.8}O{sub 12} garnet films deposited by reactive ion beam sputtering on (1 1 1) gadolinium–gallium garnet substrates, optical glass-ceramic and SiO{sub 2} films have been studied. Films were annealed at low pressure in oxygen atmosphere and in the air. The possibility of preparation of crystalline garnet films with high concentration of bismuth on the SiO{sub 2} films using a buffer layer with low concentration of Bi has been shown. This allows to produce one-dimensional magneto-photonic crystals with high effective Faraday rotation (several tens of°/μm for the visible optical spectrum).« less

Diode-pumped continuous-wave Nd:Gd3Ga5O12 lasers at 1406, 1415 and 1423 nm

NASA Astrophysics Data System (ADS)

Lin, Haifeng; Zhu, Wenzhang; Xiong, Feibing; Ruan, Jianjian

2018-05-01

We report a diode-pumped continuous-wave Nd:Gd3Ga5O12 (GGG) laser operating at 1.4 μm spectral region. A dual-wavelength laser at 1423 and 1406 nm is achieved with output power of about 2.59 W at absorbed pump power of 13.4 W. Further increasing the pump power, simultaneous tri-wavelength laser at 1423, 1415 and 1406 nm is also obtained with a maximum output power of 3.96 W at absorbed pump power of 18.9 W. Single-wavelength lasing is also realized at the three emission lines using an intracavity etalon. The laser result is believed to be the highest output power achieved in Nd:GGG crystal, at present, to the best of our knowledge.

Defect induced visible-light-activated near-infrared emissions in Gd3-x-y-zYbxBiyErzGa5O12

NASA Astrophysics Data System (ADS)

Tong, Liping; Saito, Katsuhiko; Guo, Qixin; Zhou, Han; Fan, Tongxiang; Zhang, Di

2017-11-01

Visible-light-activated near-infrared luminescent materials are promising photoluminescent materials due to their convenience and low cost. Crystal defects can seriously affect the performance of luminescent materials, and better understanding of the complexity of the structural disorder and electronic structures of such materials opens up new possibilities in luminescent material development. In this work, we successfully design a novel, effective, visible-light-activated near-infrared luminescent Gd3Ga5O12: 4.2%Yb3+, 8.4%Er3+, and 4.2%Bi3+ system based on first principles. This exhibits strong emission intensity and high luminous efficiency (0.993) and also has a lifetime (7.002 ms) that is at least twice as long as the longest lifetime reported in published papers. We utilize density functional theory with an effective LSDA + U method to study the structural properties of Gd3-x-y-zGa5O12: xYb3+, yBi3+, zEr3+ (GGG: Yb3+, Bi3+, Er3+). The d and f electron orbits of rare-earth ions are considered for an effective Hund exchange. Detailed analysis reveals that GGG: 4.2%Yb3+, 8.4%Er3+, 4.2%Bi3+ has the smallest cell volume because of the strong covalent bonds of Bi-O, Er-O, and Yb-O. Bi 3d is a hybridized state that acts as sensitizing ions during the process of luminescence in GGG: Yb3+, Bi3+, Er3+. Together with experimental and theoretical results, we analyze the influence of defects on emission intensity. The locations of Yb3+, Er3+, and Bi3+ are determined by X-ray absorption fine structure measurements, which are in agreement with the model constructed using first principles. This work may provide innovative guidance for the design of high-performance visible-light-activated near-infrared luminophores based on calculations and a new methodology for application of coherent laser radar and optical communication.

Extremely dense microstructure and enhanced ionic conductivity in hot-isostatic pressing treated cubic garnet-type solid electrolyte of Ga2O3-doped Li7La3Zr2O12

NASA Astrophysics Data System (ADS)

Qin, Shiying; Zhu, Xiaohong; Jiang, Yue; Ling, Ming’En; Hu, Zhiwei; Zhu, Jiliang

A large number of pores and a low relative density that are frequently observed in solid electrolytes reduce severely their ionic conductivity and thus limit their applicability. Here, we report on the use of hot isostatic pressing (HIP) for ameliorating the garnet-type lithium-ion conducting solid electrolyte of Ga2O3-doped Li7La3Zr2O12 (Ga-LLZO) with nominal composition of Li6.55Ga0.15La3Zr2O12. The Ga-LLZO pellets were conventionally sintered at 1075∘C for 12h, and then were followed by HIP treatment at 120MPa and 1160∘C under an Ar atmosphere. It is found that the HIP-treated Ga-LLZO shows an extremely dense microstructure and a significantly enhanced ionic conductivity. Coherent with the increase in relative density from 90.5% (untreated) to 97.5% (HIP-treated), the ionic conductivity of the HIP-treated Ga-LLZO reaches as high as 1.13×10‑3S/cm at room temperature (25∘C), being two times higher than that of 4.58×10‑4S/cm for the untreated one.

Free carrier absorption in self-activated PbWO4 and Ce-doped Y3(Al0.25Ga0.75)3O12 and Gd3Al2Ga3O12 garnet scintillators

NASA Astrophysics Data System (ADS)

Auffray, E.; Korjik, M.; Lucchini, M. T.; Nargelas, S.; Sidletskiy, O.; Tamulaitis, G.; Tratsiak, Y.; Vaitkevičius, A.

2016-08-01

Nonequilibrium carrier dynamics in the scintillators prospective for fast timing in high energy physics and medical imaging applications was studied. The time-resolved free carrier absorption investigation was carried out to study the dynamics of nonequilibrium carriers in wide-band-gap scintillation materials: self-activated led tungstate (PbWO4, PWO) ant two garnet crystals, GAGG:Ce and YAGG:Ce. It was shown that free electrons appear in the conduction band of PWO and YAGG:Ce crystals within a sub-picosecond time scale, while the free holes in GAGG:Ce appear due to delocalization from Gd3+ ground states to the valence band within a few picoseconds after short-pulse excitation. The influence of Gd ions on the nonequilibrium carrier dynamics is discussed on the base of comparison the results of the free carrier absorption in GAGG:Ce containing gadolinium and in YAGG without Gd in the host lattice.

Anisotropic phase diagram of the rare-earth hyperkagome system Gd3Ga5O12 (GGG)

NASA Astrophysics Data System (ADS)

Quilliam, Jeffrey; Rousseau, Alexandre; Parent, Jean-Michel

An understanding of the low-temperature properties of the hyperkagome system Gd3Ga5O12 or GGG is a long-standing problem in the field of frustrated magnetism. The origins of spin liquid and exotic spin-glass phases in this material remain mysterious and even its precise magnetic phase diagram is still not firmly established. We have investigated the field-induced phase diagram of this material using the ultrasound velocity and attenuation technique at temperatures as low as 40 mK. Two different field orientations are tested, and give rise to significant quantitative and qualitative differences. Notably, two distinct field-induced antiferromagnetic phases are observed for field parallel to 110, consistent with recent results, whereas only one ordered phase is observed for a 100 orientation. The field dependence of the sound velocity and attenuation is also found to be anisotropic within the low-field spin liquid phase. Research supported by NSERC, FQRNT.

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Lelong, Gérald; Guillaumet, Maxime; Toulemonde, Marcel

2018-02-01

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y3Fe5O12 or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd3Ga5O12 or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV 183W and 12-MeV 197Au ions were applied for fluences between 1 × 1013 and 3 × 1015 cm-2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV-visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.

The CaGeO3 Ca3Fe2Ge3O12 garnet join: an experimental study

NASA Astrophysics Data System (ADS)

Iezzi, Gianluca; Boffa-Ballaran, Tiziana; McCammon, Catherine; Langenhorst, Falko

2005-06-01

Germanate garnets are often used as isostructural analogues of silicate garnets to provide insight into the crystal chemistry and symmetry of the less accessible natural garnet solid solutions. We synthesised two series of germanate garnets at 3 GPa along the joinVIIICa3VI(CaGe)IVGe3O12 VIIICa3VIFe2IVGe3O12 at 900 °C and 1,100 °C. Samples with compositions close to the CaGeO3 end-member consist of tetragonal garnet with a small amount of triclinic CaGe2O5. Samples with nominal compositions between XFe=0.4 and 1.0 consist of a mixture of tetragonal and cubic garnets; whereas, single-phase cubic garnets were obtained for compositions with XFe>1.2 (XFe gives the iron content expressed in atoms per formula unit, and varies between 0 and 2 along the join). Run products which were primarily single-phase garnet were investigated using Mössbauer spectroscopy. Spectra from samples synthesised at 1,100°C consist of one well-resolved doublet that can be assigned to Fe3+ in the octahedral site of the garnet structure. A second doublet, present primarily in samples synthesised at 900°C, can be assigned to Fe2+ at the octahedral sites of the garnet structure. The relative abundance of Fe2+ decreases with increasing iron content. Transmission electron microscopy analyses confirm this tendency and show that the garnets are essentially defect-free. The unit-cell parameters of tetragonal VIIICa3VI(CaGe)IVGe3O3 garnet decrease with increasing synthesis temperature, and the deviation from cubic symmetry becomes smaller. Cubic garnets show a linear decrease of unit-cell parameter with increasing iron content. The results are discussed in the context of iron incorporation into VIIIMg3VI(MgSi)IVSi3O3 majorite.

Group 13 β-ketoiminate compounds: gallium hydride derivatives as molecular precursors to thin films of Ga2O3.

PubMed

Pugh, David; Marchand, Peter; Parkin, Ivan P; Carmalt, Claire J

2012-06-04

Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)═O}(2)] (L(1)H(2), R = (CH(2))(2); L(2)H(2), R = (CH(2))(3)), linked by ethylene (L(1)) and propylene (L(2)) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L(1))Cl] (3), [Ga(L(n))Cl] (4, n = 1; 6, n = 2) and [In(L(n))Cl] (5, n = 1; 7, n = 2). Ligand L(1) has also been used to form a gallium hydride derivative [Ga(L(1))H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me(2)N(CH(2))(3)N(H)C(R')-CHC(R')═O] (L(3)H, R' = Me; L(4)H, R' = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L(3))Me(2)] (9) and [In(L(3))Me(2)] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L(n))H(2)] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L(1))H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga(2)O(3). The films were analyzed by powder XRD, SEM, and EDX.

Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

2016-12-01

Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the "easy-magnetic plane" type was found. The gyromagnetic ratio and the demagnetizing field 4π M S were calculated.

Role of Ce4+ in the Scintillation Mechanism of Codoped Gd3Ga3Al2O12∶Ce

NASA Astrophysics Data System (ADS)

Wu, Yuntao; Meng, Fang; Li, Qi; Koschan, Merry; Melcher, Charles L.

2014-10-01

To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce44, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce4+ is still lacking. The aim of this work is to clarify the role of Ce4+ in scintillators by studying Ca2+ codoped Gd3Ga3Al2O12∶Ce (GGAG ∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca2+ codoping content and the Ce4+ fraction is seen. The energy-level diagrams of Ce3+ and Ce4+ in the Gd3Ga3Al2O12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d1 state of Ce4+ in the forbidden gap in comparison to that of Ce3+. Underlying reasons for the decay-time acceleration resulting from Ca2+ codoping are revealed, and the physical processes of the Ce4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.

Li{sub 3}Gd{sub 3}Te{sub 2}O{sub 12}:Eu{sup 3+}- an intense red phosphor for solid state lighting applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Hansnath; Asiri Naidu, S.; Varadaraju, U.V., E-mail: varada@iitm.ac.in

Li{sub 3}Gd{sub 3−3x}Eu{sub 3x}Te{sub 2}O{sub 12} (x=0.05−1.0) phases with garnet structure were synthesized by high temperature solid state reaction and the photoluminescence properties were investigated. The appearance of bands due to intra 4 f transitions of Gd{sup 3+} in the excitation spectra recorded by monitoring the 612 nm emission line of the activator indicates Gd{sup 3+}→Eu{sup 3+} energy transfer in this host lattice. Under 395 nm excitation, the electric dipole transition is predominant in the emission spectrum of Eu{sup 3+} and is in agreement with the C{sub 2} point group (noncentrosymmetric) of the EuO{sub 8} polyhedron. The critical concentration ofmore » the Eu{sup 3+} activator in this series was found to be 0.6 (x=0.2) above which, concentration quenching occurs. The emission intensity of the phosphor composition, Li{sub 3}Gd{sub 2.4}Eu{sub 0.6}Te{sub 2}O{sub 12} is ~4 times that of the commercial sample of Y{sub 2}O{sub 3}:Eu{sup 3+} phosphor. - Highlights: • New Eu{sup 3+} doped garnet. • Intense electric dipole emission. • Gd{sup 3+}→Eu{sup 3+} energy transfer.« less

Juxtaposition of spin freezing and long range order in a series of geometrically frustrated antiferromagnetic gadolinium garnets

NASA Astrophysics Data System (ADS)

Quilliam, J. A.; Meng, S.; Craig, H. A.; Corruccini, L. R.; Balakrishnan, G.; Petrenko, O. A.; Gomez, A.; Kycia, S. W.; Gingras, M. J. P.; Kycia, J. B.

2013-05-01

Specific heat measurements in zero magnetic field are presented on a homologous series of geometrically frustrated antiferromagnetic Heisenberg garnet systems. Measurements of Gd3Ga5O12, grown with isotopically pure Gd, agree well with previous results on samples with naturally abundant Gd, showing no ordering features. In contrast, samples of Gd3Te2Li3O12 and Gd3Al5O12 are found to exhibit clear ordering transitions at 243 and 175 mK, respectively. The effects of low level disorder are studied through dilution of Gd3+ with nonmagnetic Y3+ in Gd3Te2Li3O12. A thorough structural characterization, using x-ray diffraction, is performed on all of the samples studied. We discuss possible explanations for such diverse behavior in very similar systems.

Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

PubMed

Nogales, E; Hidalgo, P; Lorenz, K; Méndez, B; Piqueras, J; Alves, E

2011-07-15

Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

Properties of Ferrite Garnet (Bi, Lu, Y)3(Fe, Ga)5O12 Thin Film Materials Prepared by RF Magnetron Sputtering

PubMed Central

Nur-E-Alam, Mohammad; Belotelov, Vladimir; Alameh, Kamal

2018-01-01

This work is devoted to physical vapor deposition synthesis, and characterisation of bismuth and lutetium-substituted ferrite-garnet thin-film materials for magneto-optic (MO) applications. The properties of garnet thin films sputtered using a target of nominal composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 are studied. By measuring the optical transmission spectra at room temperature, the optical constants and the accurate film thicknesses can be evaluated using Swanepoel’s envelope method. The refractive index data are found to be matching very closely to these derived from Cauchy’s dispersion formula for the entire spectral range between 300 and 2500 nm. The optical absorption coefficient and the extinction coefficient data are studied for both the as-deposited and annealed garnet thin-film samples. A new approach is applied to accurately derive the optical constants data simultaneously with the physical layer thickness, using a combination approach employing custom-built spectrum-fitting software in conjunction with Swanepoel’s envelope method. MO properties, such as specific Faraday rotation, MO figure of merit and MO swing factor are also investigated for several annealed garnet-phase films. PMID:29789463

Role of Ce 4 + in the scintillation mechanism of codoped Gd 3 Ga 3 Al 2 O 12 : Ce

DOE PAGES

Wu, Yuntao; Meng, Fang; Li, Qi; ...

2014-10-17

To control the time-response performance of widely used cerium-activated scintillators in cutting-edge medical-imaging devices, such as time-of-flight positron-emission tomography, a comprehensive understanding of the role of Ce valence states, especially stable Ce 4+, in the scintillation mechanism is essential. However, despite some progress made recently, an understanding of the physical processes involving Ce 4+ is still lacking. The aim of this work is to clarify the role of Ce 4+ in scintillators by studying Ca 2+ codoped Gd 3Ga 3Al 2O1 2∶Ce (GGAG∶Ce). By using a combination of optical absorption spectra and x-ray absorption near-edge spectroscopies, the correlation between Ca 2+codopingmore » content and the Ce 4+ fraction is seen. The energy-level diagrams of Ce 3+ and Ce 4+ in the Gd 3Ga 3Al 2O 12 host are established by using theoretical and experimental methods, which indicate a higher position of the 5d 1 state of Ce 4+ in the forbidden gap in comparison to that of Ce 3+. Underlying reasons for the decay-time acceleration resulting from Ca 2+ codoping are revealed, and the physical processes of the Ce 4+-emission model are proposed and further demonstrated by temperature-dependent radioluminescence spectra under x-ray excitation.« less

Luminescent properties of Cr-doped (GdX, Y1-X)3Al5O12 infra-red scintillator crystals

NASA Astrophysics Data System (ADS)

Suzuki, Akira; Kurosawa, Shunsuke; Yamaji, Akihiro; Shoji, Yasuhiro; Pejchal, Jan; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

2014-10-01

Cr-doped (GdX Y1-X)3Al5O12 (X = 0, 0.25, 0.50) crystals prepared by the micro-pulling down method were investigated to develop a infra-red scintillator for implantable patient dosimeter in radiation therapy. In order to evaluate their optical and scintillation performance, the following properties were measured: (i) transmittance between ultra-violet and near-infra red region, (ii) photoluminescence spectra under Xe-lamp excitation, and (iii) X-ray excited radio-luminescence spectra. Cr:Y3Al5O12 and Cr:(Gd0.25 Y0.75)3Al5O12 crystals showed increased transmittance of 80%, while Cr:(Gd0.50 Y0.50)3Al5O12 had a lower transmittance of 40% due to its polycrystalline structure. In addition, all the Cr:(GdX Y1-X)3Al5O12 crystals showed sharp scintillation luminescence peaks ascribed to Cr3+ d-d transitions. Therefore, these results suggested that Cr:Y3Al5O12 and Cr:(Gd0.25 Y0.75)3Al5O12 crystals can be candidate materials for the dosimeter use.

Co-doping effects on luminescence and scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 scintillator

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroaki; Kamada, Kei; Kurosawa, Shunsuke; Pejchal, Jan; Shoji, Yasuhiro; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2016-11-01

Mg co-doping effects on scintillation properties of Ce:Lu1Gd2(Ga,Al)5O12 (LGGAG) were investigated. Mg 200 ppm co-doped Ce:LGGAG single crystals were prepared by micro pulling down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg co-doping. Ce4+ charge transfer absorption was observed below 300 nm in Mg,Ce:LGGAG which is in good agreement with previous reports. The scintillation decay times were accelerated by Mg co-doping.

Optical absorbances of Gd3Ga5O12 single crystals under shock compression to 211 GPa

NASA Astrophysics Data System (ADS)

Liu, Q. C.; Zhou, X. M.; Luo, S. N.

2017-04-01

Shock-induced opacity in Gd3Ga5O12 (GGG) single crystals is investigated by transmission/emission measurements at 16 wavelengths (400-800 nm), as well as complementary particle velocity measurements at 1550 nm, in the pressure range of 47-211 GPa. Optical transmission spectra through the shocked samples are measured with a in-situ, shock-generated light source, and the resultant extinction coefficients of different wavelengths and shock pressures obtained. As shock strength increases, the optical opacity of the shocked GGG increases and peaks at 75 GPa (the transparent-opaque transition), drops at 75-100 GPa (the opaque-transparent transition), and then increases again. The transparency recovery coincides with a solid-solid phase transition. The microstructure changes associated with the solid-solid phase transition and plastic deformation most likely cause the loss and recovery of transparency. GGG can be useful as a high pressure window for laser velocimetry (1550 nm) or optical pyrometry (400-800 nm) in the ranges of 100-140 GPa and 80-120 GPa, respectively.

Effect of surface modification on photoluminescence properties of Y3Al5O12:Ce3+, Gd3+ nano-phosphors.

PubMed

Li, Jie; Zhao, Junfu; Zhou, Hefeng; Liang, Jian; Liu, Xuguang; Xu, Bingshe

2011-04-01

In this study, a series of Y(3)Al(5)O(12):Ce(3+), Gd(3+) nano-phosphors were prepared using a simply wet chemical process with polyvinyl pyrrolidone as a modifier. The crystal and bonding structures of Y(3)Al(5)O(12):Ce(3+), Gd(3+) nano-phosphors prepared with different weight percentages of polyvinyl pyrrolidone were characterized by X-ray diffractometry and infrared spectrometry. The decomposition process of dried precursor gel with adding 1.37 wt% polyvinyl pyrrolidone was investigated by differential thermal and thermogravimetric analysis. The effect of surface modification on photoluminescence properties for the samples was studied. The results show that the steric hindrance effect of polyvinyl pyrrolidone leads to high dispersion and good crystallinity of Y(3)Al(5)O(12):Ce(3+), Gd(3+) nano-phosphors prepared with adding a proper weight percentages of polyvinyl pyrrolidone. Adding polyvinyl pyrrolidone is beneficial for the photoluminescence enhancement of the samples, which is attributed to the promotion of the incorporation of Ce(3+) and Gd(3+) into the Y(3)Al(5)O(12) nanocrystal and the surface passivation of the nano-particles by the polyvinyl pyrrolidone molecules. Copyright © 2011 Elsevier B.V. All rights reserved.

Preparation of high magneto-optical performance and crystalline quality Ce1Gd2Fe5-xGaxO12 films on CLNGG substrate crystal

NASA Astrophysics Data System (ADS)

Fu, Qiu-ping; Zheng, Ze-yuan; Lin, Nan-xi; Liu, Xiao-feng; Hong, Can-huang; Hu, Xiao-lin; Zhuang, Nai-feng; Chen, Jian-zhong

2016-11-01

Thin films of Ce1Gd2Fe5-xGaxO12 (Ce,Ga:GIG) were prepared on Gd3Ga5O12 (GGG) and Ca2.90Li0.30Nb1.93Ga2.76O12 (CLNGG) substrates by using radio frequency magnetron sputtering technique. The phase, grain orientation, surface morphology, transmittance, magnetism and magnetic circular dichroism (MCD) properties of films were analyzed. And the effects of lattice mismatch and non-magnetic Ga3+-doping were discussed. The results show that the films with higher crystallized quality and lower stress can be obtained by growing on CLNGG than on GGG. Moreover, the coercive force, magnetization, magneto-optical effect intensity and orientation of film can be effectively regulated by adjusting Ga3+-doped concentration.

HABIT CHANGES OF Y3Al5O12 AND Y3Ga5O12 GROWN FROM A PbO-PbF2 FLUX,

DTIC Science & Technology

Al2O3 or - Ga2O3 ratio in the melt. Y3Ga5O12 crystals have a pure (211) habit when grown from either a Y2O3- or PbO-rich melt. The crystals develop...small (110) faces when grown from a Ga2O3 - or PbF2-rich melt. Y3Al5O12 crystals have a pure (110) when grown from either a PbF2- or Al2O3-rich melt... Ga2O3 -rich melts. It is believed that the habit variations are caused by changes in either the surface diffusion or step propagation, due to Pb

Optical pressure and temperature sensor based on the luminescence properties of Nd3+ ion in a gadolinium scandium gallium garnet crystal.

PubMed

León-Luis, S F; Muñoz-Santiuste, J E; Lavín, V; Rodríguez-Mendoza, U R

2012-04-23

Hypersensitivity to pressure and temperature is observed in the near-infrared emission lines of the Nd(3+) ion in a Cr(3+),Nd(3+):Gd(3)Sc(2)Ga(3)O(12) crystal, associated to the R(1,2)((4)F(3/2))→Z(5)((4)I(9/2)) and R(1,2)((4)F(3/2))→Z(1)((4)I(9/2)) transitions. The former emissions show large linear pressure coefficients of -11.3 cm(-1)/GPa and -8.8 cm(-1)/GPa, while the latter show high thermal sensitivity in the low temperature range. Thus this garnet crystal can be considered a potential optical pressure and/or temperature sensor in high pressure and temperature experiments up to 12 GPa and below room temperature, used in diamond anvil cells and excited with different UV and visible commercial laser due to the multiple Cr(3+) and Nd(3+) absorption bands. © 2012 Optical Society of America

Gallium hydride complexes stabilised by multidentate alkoxide ligands: precursors to thin films of Ga2O3 at low temperatures.

PubMed

Pugh, David; Bloor, Leanne G; Parkin, Ivan P; Carmalt, Claire J

2012-05-07

The donor-functionalised alkoxides {Me(3-x)N(CH(2)CH(2)O)(x)} (L(x); x = 1, 2) have been used to form gallium hydride complexes [{GaH(2)(L(1))}(2)] and [{GaH(L(2))}(2)] that are stable and isolable at room temperature. Along with a heteroleptic gallium tris(alkoxide) complex [Ga(L(1))(3)] and the dimeric complex [{GaMe(L(2))}(2)], these compounds have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted chemical vapour deposition (AACVD) with toluene as solvent. The resulting films were mostly transparent, indicating low levels of carbon contamination, and they were also mainly amorphous. However, [Ga(L(1))(3)] did contain visibly crystalline material deposited at a substrate temperature of 450 °C, by far the lowest ever observed for the CVD of gallium oxide. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

NASA Astrophysics Data System (ADS)

Semuk, E. Yu.; Berzhansky, V. N.; Prokopov, A. R.; Shaposhnikov, A. N.; Karavainikov, A. V.; Salyuk, O. Yu.; Golub, V. O.

2015-11-01

Magnetic properties of Bi1.5Gd1.5Fe4.5Al0.5O12 (84 nm) and Bi2.8Y0.2Fe5O12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi1.5Gd1.5Fe4.5Al0.5O12/Bi2.8Y0.2Fe5O12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction.

Homogeneity of Gd-based garnet transparent ceramic scintillators for gamma spectroscopy

NASA Astrophysics Data System (ADS)

Seeley, Z. M.; Cherepy, N. J.; Payne, S. A.

2013-09-01

Transparent polycrystalline ceramic scintillators based on the composition Gd1.49Y1.49Ce0.02Ga2.2Al2.8O12 are being developed for gamma spectroscopy detectors. Scintillator light yield and energy resolution depend on the details of various processing steps, including powder calcination, green body formation, and sintering atmosphere. We have found that gallium sublimation during vacuum sintering creates compositional gradients in the ceramic and can degrade the energy resolution. While sintering in oxygen produces ceramics with uniform composition and little afterglow, light yields are reduced, compared to vacuum sintering. By controlling the atmosphere during the various process steps, we were able to minimize the gallium sublimation, resulting in a more homogeneous composition and improved gamma spectroscopy performance.

Scintillating Screens Based on the Single Crystalline Films of Multicomponent Garnets: New Achievements and Possibilities

NASA Astrophysics Data System (ADS)

Zorenko, Yuriy; Gorbenko, Vitalii; Zorenko, Tetiana; Paprocki, Kazimierz; Nikl, Martin; Mares, Jiri A.; Bilski, Pawel; Twardak, Anna; Sidletskiy, Oleg; Gerasymov, Iaroslav; Grinyov, Boris; Fedorov, Alexandr

2016-04-01

The paper is dedicated to development of the novel scintillating screens based on single crystalline films (SCF) of Ce doped Lu3 - xTbxAl5 - yGayO12 multicomponent garnets at x = 2 - 3 and y = 0 - 2.5 onto Y3Al5O12 (YAG) and Gd3Al2.5Ga2.5O12 (GAGG) substrates using the liquid phase epitaxy (LPE) method. We report the optimized content and high scintillation figure of merit of SCF of these garnets grown by the LPE method with using PbO based flux. Namely, the Tb3Al2.5Ga2.5O12:Ce SCFs possess the highest values of light yield (LY) compared to all earlier investigated SCF samples, with their LY exceeding by 2.35 and 1.15 times the LY values for YAG:Ce and LuAG:Ce SCF scintillators, respectively. The SCFs of the mentioned compounds show very lower thermoluminescence in the above room temperature range and relatively fast scintillation decay.

Scintillation properties of Gd3Al2Ga3O12:Ce3+ single crystal scintillators

NASA Astrophysics Data System (ADS)

Sakthong, Ongsa; Chewpraditkul, Weerapong; Wanarak, Chalerm; Kamada, Kei; Yoshikawa, Akira; Prusa, Petr; Nikl, Martin

2014-07-01

The scintillation properties of Gd3Al2Ga3O12:Ce3+ (GAGG:Ce) single crystals grown by the Czochralski method with 1 at% cerium in the melt were investigated and results were compared with so far published results in the literature. The light yield (LY) and energy resolution were measured using a XP5200B photomultiplier. Despite about twice higher LY for GAGG:Ce, the energy resolution is only slightly better than that of LuAG:Ce due to its worse intrinsic resolution and non-proportionality of LY. The LY dependences on the sample thickness and amplifier shaping time were measured. The estimated photofraction in pulse height spectra of 320 and 662 keV γ-rays and the total mass attenuation coefficient at 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.

Fabrication of Ce3+ doped Gd3Ga3Al2O12 ceramics by reactive sintering method

NASA Astrophysics Data System (ADS)

Ye, Yong; Liu, Peng; Yan, Dongyue; Xu, Xiaodong; Zhang, Jian

2017-09-01

Ce3+ doped Gd3Ga3Al2O12 (Ce:GGAG) ceramics were fabricated by solid state reactive sintering method in this study. The ceramics were pre-sintered in normal muffle furnace in air at various temperature range from 1410 °C to 1550 °C for 10 h and post-treated by hot isostatic press at 1400 °C/2 h in 200 MPa Ar. The phase and microstructure evolution of Ce: GGAG samples during the densification process were investigated by X-ray diffraction and scanning electron microscope. Pure GGAG phase appeared with the temperature increased to 1200 °C. The fully dense and translucent GGAG ceramics were fabricated by pre-sintering at 1450 °C and followed by HIP treatment.

Epitaxial patterning of nanometer-thick Y 3Fe 5O 12 films with low magnetic damping

DOE PAGES

Li, Shaozhen; Zhang, Wei; Ding, Junjia; ...

2016-11-27

Magnetic insulators such as yttrium iron garnet, Y 3Fe 5O 12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and effcient spin current generation and transmission. We demonstrate reliable and effcient epitaxial growth and nanopatterning of Y 3Fe 5O 12 thin-film based nanostructures on insulating Gd 3Ga 5O 12 substrates. In particular, our fabrication process is compatible with conventional sputtering and liftoff, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Structural and magnetic properties indicate good qualities, in particular low magneticmore » damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing to ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhibits cross-over with the main mode upon varying the width of the wires. In conclusion, the non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y 3Fe 5O 12 nanostructures serve as the key functional component.« less

Luminescence quenching and scintillation response in the Ce3+ doped GdxY3-xAl5O12 (x = 0.75, 1, 1.25, 1.5, 1.75, 2) single crystals

NASA Astrophysics Data System (ADS)

Bartosiewicz, K.; Babin, V.; Kamada, K.; Yoshikawa, A.; Mares, J. A.; Beitlerova, A.; Nikl, M.

2017-01-01

The luminescence and scintillation properties of the gadolinium yttrium aluminium garnets, (Gd,Y)3Al5O12 doped with Ce3+ are investigated as a function of the Gd/Y ratio with the aim of an improved understanding of the luminescence quenching, energy transfer and phase stability in these materials. An increase of both crystal field strength and instability of the garnet phase with increasing content of Gd3+ is observed. The instability of the garnet phase results in an appearance of the perovskite phase inclusions incorporated into the garnet phase. The luminescence features of Ce3+ in the perovskite phase inclusions and in the main garnet phase are studied separately. The thermal quenching of the 5 d → 4f emission of Ce3+ in the latter phase is determined by temperature dependence of the photoluminescence decay time. The results show that the onset of the thermal quenching is moved to lower temperatures with increasing gadolinium content. The measurements of temperature dependence of delayed radiative recombination do not reveal a clear evidence that the thermal quenching is caused by thermally induced ionization of the Ce3+ 5d1 excited state. Therefore, the main mechanism responsible for the luminescence quenching is due to the non-radiative relaxation from 5d1 excited state to 4f ground state of Ce3+. The energy transfer processes between Gd3+ and Ce3+ as well as between perovskite and garnet phases are evidenced by the photoluminescence excitation and emission spectra as well as decay kinetic measurements. Thermally stimulated luminescence (TSL) studies in the temperature range 77-497 K and scintillation decays under γ excitation complete the material characterization.

Crystalline and magnetooptical characteristics of (Tb,Bi)3(Fe,Ga)5O12 deposited on (Y,Nd)3Al5O12

NASA Astrophysics Data System (ADS)

Morimoto, Ryohei; Goto, Taichi; Nakamura, Yuichi; Boey Lim, Pang; Uchida, Hironaga; Inoue, Mitsuteru

2018-06-01

We prepared Bi- and Ga-substituted Tb3Fe5O12 (BiGa:TIG) films on a Nd-substituted Y3Al5O12 (Nd:YAG) single crystal substrate by pulsed laser deposition, and investigated their magnetic, optical, and magnetooptical properties. A BiGa:TIG film deposited with a substrate temperature of 700 °C shows the easy axis of magnetization along the out-of-plane direction of the film and the Faraday rotation angle of 900°/cm at a wavelength of 1064 nm. The epitaxial growth of the film is confirmed by X-ray diffraction analysis.

Structural and waveguiding characteristics of Er3+:Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

NASA Astrophysics Data System (ADS)

Hlásek, T.; Rubešová, K.; Jakeš, V.; Nekvindová, P.; Kučera, M.; Daniš, S.; Veis, M.; Havránek, V.

2015-11-01

Erbium (Er3+) doped ytterbium garnet (Er:Yb3Al5-yGayO12; y = 0, 0.55 and 1.1) single crystalline thick films have been grown by the low-temperature liquid phase epitaxy method (LPE). The composition of the films was determined using the high resolution XRD, the particle-induced X-ray emission spectroscopy (PIXE) and the particle-induced gamma-ray emission spectroscopy (PIGE). The lattice mismatch between films and substrates was investigated by the high-resolution X-ray diffraction. The surface analysis was carried out by the atomic force microscopy (AFM). Pure infrared emission of Er3+ ions was observed in all films containing gallium. The characteristics such as refractive index, thickness and light propagation were studied by the m-line spectroscopy (MLS) using several wavelengths (633, 964, 1311 and 1552 nm). All samples, where y = 1.1, were multimode waveguides. For these reasons, the Er:Yb3Al3.9Ga1.1O12 seems to be a promising material for light amplifiers in the IR region.

A comparison of the transport properties of lithium-stuffed garnets and the conventional phases Li 3Ln3Te 2O 12

NASA Astrophysics Data System (ADS)

Cussen, Edmund J.; Yip, Thomas W. S.; O'Neill, Gemma; O'Callaghan, Michael P.

2011-02-01

The structures of new phases Li 6CaLa 2Sb 2O 12 and Li 6.4Ca 1.4La 2Sb 2O 12 have been characterised using neutron powder diffraction. Rietveld analyses show that both compounds crystallise in the space group la3¯ d and contain the lithium cations in a complex arrangement with occupational disorder across oxide tetrahedra and distorted oxide octahedra, with considerable positional disorder in the latter. Variable temperature neutron diffraction experiments on Li 6.4Ca 1.4La 2Sb 2O 12 show the structure is largely invariant with only a small variation in the lithium distribution as a function of temperature. Impedance spectroscopy measurements show that the total conductivity of Li 6CaLa 2Sb 2O 12 is several orders of magnitude smaller than related lithium-stuffed garnets with σ=10 -7 S cm -1 at 95 °C and an activation energy of 0.82(3) eV. The transport properties of the conventional garnets Li 3Gd 3Te 2O 12, Li 3Tb 3Te 2O 12, Li 3Er 3Te 2O 12 and Li 3Lu 3Te 2O 12 have been evaluated and consistently show much lower values of conductivity, σ≤4.4×10 -6 S cm -1 at 285 °C and activation energies in the range 0.77(4)≤ Ea/eV≤1.21(3).

Determination of the ferrimagnetic precession cone of in-plane magnetized garnet films using optical modulation technique

NASA Astrophysics Data System (ADS)

Bahlmann, N.; Gerhardt, R.; Wallenhorst, M.; Dötsch, H.

1996-10-01

Magnetic garnet films of composition (A, Bi)3(Fe, B)5 O12 are grown by liquid phase epitaxy on [111] oriented substrates of Gd3 Ga5 O12, where A=yttrium or lutetium and B=aluminum or gallium. The ferrimagnetic resonance (FMR) of in-plane magnetized films is studied by analyzing the modulation of light, which passes the film parallel to the film normal. Modulation efficiencies up to 1.8% at 2.9 GHz are observed at a wavelength of 0.633 μm. From the measured modulation intensities the precession angles of the FMR are derived. The dependence of the precession cone on the excitation frequency or on the external induction shows a foldover effect which, however, is smaller than for the FMR of perpendicularly magnetized films. Maximum precession angles up to 14° are achieved and the experiments indicate that saturation occurs. Light modulation is also observed at the first harmonic frequency, but the intensity is about 300 times weaker than at the fundamental frequency.

Optical properties and refractive indices of Gd3Al2Ga3O12:Ce3+ crystals

NASA Astrophysics Data System (ADS)

Kozlova, N. S.; Busanov, O. A.; Zabelina, E. V.; Kozlova, A. P.; Kasimova, V. M.

2016-05-01

Crystals of cerium-doped gadolinium-gallium-aluminum garnet have been grown by the Czochralski method. The transmission and reflection spectra of these crystals in the wavelength range of 250-800 nm have been obtained by optical spectroscopy. Refractive indices are calculated based on the measured Brewster angles, the experimental results are approximated using the Cauchy equation, and a dispersion dependence is obtained.

Band-Gap and Band-Edge Engineering of Multicomponent Garnet Scintillators from First Principles

NASA Astrophysics Data System (ADS)

Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; Jiang, Chao; Stanek, Christopher R.

2015-11-01

Complex doping schemes in R3 Al5 O12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimum (CBM) or valence-band maximum (VBM). We consider two sets of compositions based on Lu3 B5O12 where B is Al, Ga, In, As, and Sb, and R3Al5 O12 , where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. This approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.

Luminescence properties and electronic structure of Ce{sup 3+}-doped gadolinium aluminum garnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dotsenko, V.P., E-mail: ssclab@ukr.net; Berezovskaya, I.V.; Voloshinovskii, A.S.

2015-04-15

Highlights: • The luminescence properties of Ce{sup 3+} ions in (Y, Gd){sub 3}Al{sub 5}O{sub 12} are analyzed. • The Gd{sup 3+} → Y{sup 3+} substitution leads to increasing of Ce{sup 3+} noncubic crystal field splitting parameter. • The excitation spectra for the Ce{sup 3+} emission in GdAG contain bands at 6.67, 7.75, and 9.76 eV. • These features are due to the Ce{sup 3+}-bound exciton formation and O 2p → Al 3s, 3p transitions. • Contributions from Al atoms to the conduction-band density of states are quite essential. - Abstract: Yttrium-gadolinium aluminum garnets (YGdAG) doped with Ce{sup 3+} ions havemore » been prepared by co-precipitation method. The luminescent properties of Ce{sup 3+} ions in Gd{sub 3(1−x)}Ce{sub 3x}Al{sub 5}O{sub 12} (x = 0.01) have been studied upon excitation in the 2–20 eV region. The substitution of Gd{sup 3+} for Y{sup 3+} in the garnet structure results in broadening the emission band and shifting its maximum towards the longer wavelengths. It was found that in addition to the 4f → 5d excitation bands of Ce{sup 3+} ions, the excitation spectra for the Ce{sup 3+} emission contain bands at 6.67, 7.75, and 9.76 eV. These bands are attributed to the Ce{sup 3+}-bound exciton formation and O 2p → Al 3s, 3p transitions, respectively. Although gadolinium states dominate near the bottom of the conduction band of Gd{sub 3}Al{sub 5}O{sub 12}, contributions from Al{sub tetr} and Al{sub oct} atoms to the conduction-band density of states are evaluated as quite essential.« less

Continuous wave and passively Q-switched laser performance of Nd:LuxGd3-xGa5O12 crystal at 1062 nm

NASA Astrophysics Data System (ADS)

Fu, X. W.; Jia, Z. T.; Yang, H.; Li, Y. B.; Yuan, D. S.; Zhang, B. T.; Dong, C. M.; He, J. L.; Tao, X. T.

2012-12-01

Continuous wave (CW) and passively Q-switched (PQS) laser properties at 1062 nm of the Nd:LuxGd3-xGa5O12 (Nd:LGGG) disordered crystal have been demonstrated. The doping concentrations of Nd3+ and Lu3+ in the as obtained crystal were measured to be 0.96 and 0.66 at.%, respectively. In the CW regime, the output power of 9.73 W was obtained with an optical-to-optical efficiency as high as 60.7% and slope efficiency of 61.2%. During the passively Q-switched operation, the maximum output power of 1.24 W was achieved under the absorbed pump power of 6.86 W. The maximum peak power of 14.20 kW and single pulse energy of 148 μJ were obtained with the Toc = 10% under the absorbed pump power of 6.36 W. The results are much better than those obtained with Nd:LGGG crystal doped with 13.6 at.% Lu3+ and 0.53 at.% Nd3+ ions.

Development of Eu3+ activated monoclinic, perovskite, and garnet compounds in the Gd2O3-Al2O3 phase diagram as efficient red-emitting phosphors

NASA Astrophysics Data System (ADS)

Li, Jinkai; Li, Ji-Guang; Li, Jing; Liu, Shaohong; Li, Xiaodong; Sun, Xudong; Sakka, Yoshio

2013-10-01

Eu3+ doped Gd4Al2O9 (GdAM), GdAlO3 (GdAP), and Gd3Al5O12 (GdAG, containing 10 at% of Lu3+ for lattice stabilization) have been developed in this work as efficient red-emitting phosphors. With coprecipitated carbonate precursors, phase evolution studies found minimum processing temperatures of ~1000, 1100, and 1300 °C for the three phosphors to crystallize as pure phases, respectively. Compared with their yttrium aluminate counterparts, the gadolinium-based phosphors exhibit red-shifted O2--Eu3+ charge transfer excitation band (CTB) centers due to the lower electronegativity of Gd3+ and appreciably higher quantum yields of photoluminescence owing to the occurrence of efficient Gd3+→Eu3+energy transfer. The optimal Eu3+ contents were determined to be ~7.5 at% for GdAM and 5.0 at% for both GdAP and GdAG, and concentration quenching of luminescence was suggested to be due to exchange interactions. Fluorescence decay analysis found a shorter lifetime for the phosphor powder processed at a higher temperature or with a higher Eu3+ content, and the underlying mechanism was discussed. Fluorescence lifetimes were also compared between the yttrium and gadolinium phosphor systems for the dominant emissions.

A Synthesis and Crystal Chemical Study of the Fast Ion Conductor Li7–3xGaxLa3 Zr2O12 with x = 0.08 to 0.84

PubMed Central

2014-01-01

Fast-conducting phase-pure cubic Ga-bearing Li7La3Zr2O12 was obtained using solid-state synthesis methods with 0.08 to 0.52 Ga3+ pfu in the garnet. An upper limit of 0.72 Ga3+ pfu in garnet was obtained, but the synthesis was accompanied by small amounts of La2Zr2O12 and LiGaO3. The synthetic products were characterized by X-ray powder diffraction, electron microprobe and SEM analyses, ICP-OES measurements, and 71Ga MAS NMR spectroscopy. The unit-cell parameter, a0, of the various garnets does not vary significantly as a function of Ga3+ content, with a value of about 12.984(4) Å. Full chemical analyses for the solid solutions were obtained giving: Li7.08Ga0.06La2.93Zr2.02O12, Li6.50Ga0.15La2.96Zr2.05O12, Li6.48Ga0.23La2.93Zr2.04O12, Li5.93Ga0.36La2.94Zr2.01O12, Li5.38Ga0.53La2.96Zr1.99O12, Li4.82Ga0.60La2.96Zr2.00O12, and Li4.53Ga0.72La2.94Zr1.98O12. The NMR spectra are interpreted as indicating that Ga3+ mainly occurs in a distorted 4-fold coordinated environment that probably corresponds to the general 96h crystallographic site of garnet. PMID:24874559

The solubility and site preference of Fe3+ in Li7−3xFexLa3Zr2O12 garnets

PubMed Central

Rettenwander, D.; Geiger, C.A.; Tribus, M.; Tropper, P.; Wagner, R.; Tippelt, G.; Lottermoser, W.; Amthauer, G.

2015-01-01

A series of Fe3+-bearing Li7La3Zr2O12 (LLZO) garnets was synthesized using solid-state synthesis methods. The synthetic products were characterized compositionally using electron microprobe analysis and inductively coupled plasma optical emission spectroscopy (ICP-OES) and structurally using X-ray powder diffraction and 57Fe Mössbauer spectroscopy. A maximum of about 0.25 Fe3+ pfu could be incorporated in Li7−3xFexLa3Zr2O12 garnet solid solutions. At Fe3+ concentrations lower than about 0.16 pfu, both tetragonal and cubic garnets were obtained in the synthesis experiments. X-ray powder diffraction analysis showed only a garnet phase for syntheses with starting materials having intended Fe3+ contents lower than 0.52 Fe3+ pfu. Back-scattered electron images made with an electron microprobe also showed no phase other than garnet for these compositions. The lattice parameter, a0, for all solid-solution garnets is similar with a value of a0≈12.98 Å regardless of the amount of Fe3+. 57Fe Mössbauer spectroscopic measurements indicate the presence of poorly- or nano-crystalline FeLaO3 in syntheses with Fe3+ contents greater than 0.16 Fe3+ pfu. The composition of different phase pure Li7−3xFexLa3Zr2O12 garnets, as determined by electron microprobe (Fe, La, Zr) and ICP-OES (Li) measurements, give Li6.89Fe0.03La3.05Zr2.01O12, Li6.66Fe0.06La3.06Zr2.01O12, Li6.54Fe0.12La3.01Zr1.98O12, and Li6.19Fe0.19La3.02Zr2.04O12. The 57Fe Mössbauer spectrum of cubic Li6.54Fe0.12La3.01Zr1.98O12 garnet indicates that most Fe3+ occurs at the special crystallographic 24d position, which is the standard tetrahedrally coordinated site in garnet. Fe3+ in smaller amounts occurs at a general 96h site, which is only present for certain Li-oxide garnets, and in Li6.54Fe0.12La3.01Zr1.98O12 this Fe3+ has a distorted 4-fold coordination. PMID:26435549

Ga[OSi(O(t)Bu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry.

PubMed

Dombrowski, James P; Johnson, Gregory R; Bell, Alexis T; Tilley, T Don

2016-07-05

The molecular precursor tris[(tri-tert-butoxy)siloxy]gallium, as the tetrahydrofuran adduct Ga[OSi(O(t)Bu)3]3·THF (), was synthesized via the salt metathesis reaction of gallium trichloride with NaOSi(O(t)Bu)3. This complex serves as a model for isolated gallium in a silica framework. Complex decomposes thermally in hydrocarbon solvent, eliminating isobutylene, water, and tert-butanol to generate high surface area gallium-containing silica at low temperatures. When thermal decomposition was performed in the presence of P-123 Pluronic as a templating agent the generated material displayed uniform vermicular pores. Textural mesoporosity was evident in untemplated material. Co-thermolysis of with HOSi(O(t)Bu)3 in the presence of P-123 Pluronic led to materials with Ga : Si ratios ranging from 1 : 3 to 1 : 50, denoted UCB1-GaSi3, UCB1-GaSi10, UCB1-GaSi20 and UCB1-GaSi50. After calcination at 500 °C these materials exhibited decreasing surface areas and broadening pore distributions with increasing silicon content, indicating a loss of template effects. The position and dispersion of the gallium in UCB1-GaSi materials was investigated using (71)Ga MAS-NMR, powder XRD, and STEM/EDS elemental mapping. The results indicate a high degree of gallium dispersion in all samples, with gallium oxide clusters or oligomers present at higher gallium content.

Co-Precipitation Synthesis of Gadolinium Aluminum Gallium Oxide (GAGG) via Different Precipitants

NASA Astrophysics Data System (ADS)

Sun, Yan; Yang, Shenghui; Zhang, Ye; Jiang, Jun; Jiang, Haochuan

2014-02-01

In order to obtain a uniform transparent ceramic scintillator, well-dispersed fine starting powders with high-purity, small grain size, spherical morphology and high sinter-ability are necessary. In this study, Ce3+ doped gadolinium aluminum gallium garnet Gd3Al3Ga2O12 (GAGG) powders were synthesized by the co-precipitation method. NH4OH, NH4HCO3 and the mixed solution of NH4OH and NH4HCO3 were used as precipitants, respectively. The precursor composition, phase formation process, microstructure, morphology, particle size distribution and luminescent properties of obtained GAGG powders were measured. The results show that powders prepared using the mixed precipitant exhibit the best microstructural morphology, good sinter-ability and highest luminescent intensity. Pure GAGG polycrystalline powders could be obtained at about 950°C for 1.5 h and the average size of the particles is about 50 nm. The photoluminescence spectrum shows a strong green-yellow emission near 540 nm.

Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.

2015-02-28

Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of differentmore » thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.« less

Infrared and infrared emission spectroscopy of gallium oxide alpha-GaO(OH) nanostructures.

PubMed

Yang, Jing Jeanne; Zhao, Yanyan; Frost, Ray L

2009-10-01

Infrared spectroscopy has been used to study nano- to micro-sized gallium oxyhydroxide alpha-GaO(OH), prepared using a low temperature hydrothermal route. Rod-like alpha-GaO(OH) crystals with average length of approximately 2.5 microm and width of 1.5 microm were prepared when the initial molar ratio of Ga to OH was 1:3. beta-Ga(2)O(3) nano and micro-rods were prepared through the calcination of alpha-GaO(OH). The initial morphology of alpha-GaO(OH) is retained in the beta-Ga(2)O(3) nanorods. The combination of infrared and infrared emission spectroscopy complimented with dynamic thermal analysis were used to characterise the alpha-GaO(OH) nanotubes and the formation of beta-Ga(2)O(3) nanorods. Bands at around 2903 and 2836 cm(-1) are assigned to the -OH stretching vibration of alpha-GaO(OH) nanorods. Infrared bands at around 952 and 1026 cm(-1) are assigned to the Ga-OH deformation modes of alpha-GaO(OH). A significant number of bands are observed in the 620-725 cm(-1) region and are assigned to GaO stretching vibrations.

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet.

PubMed

Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

2015-12-16

Pure and (Ca and Si)-substituted yttrium iron garnet (Y3Fe5O12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd3Ga5O12, or GGG) single crystal substrates were irradiated by 50 MeV (32)Si and 50 MeV (or 60 MeV) (63)Cu ions for electronic stopping powers larger than the threshold value (~4 MeV μm(-1)) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10(11)-10(16) cm(-2)) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ~10(14) cm(-2). Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10(14) cm(-2)), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ~660 cm(-1) is assigned to vibration modes of randomized bonds in tetrahedral (FeO4) units.

Gadolinium Scandium Gallium Garnet (GSGG) as a Solid-State Laser Host

DTIC Science & Technology

1987-07-01

o*SATI CODSi1.SBEC EM (otne nrvrs fnceayad dniy nb)k ubr ~~~~~~~~ Gadolinium Scandium Gallium Garnet (GSGG)asaSldtteLerHt 17. ABSTRACT 6.SUJCTTEM...certain other garnet materials for replacement. It also addresses the solid-state laser host material Gadolinium Scandium Gal- lium Garnet (GSGG) and its...by neodymium-doped yttrium aluminum garnet (Nd:YAG) or other mate- rials for most applications. In the years after the invention of the ruby laser, in

Sputtering growth of Y3Fe5O12/Pt bilayers and spin transfer at Y3Fe5O12/Pt interfaces

NASA Astrophysics Data System (ADS)

Chang, Houchen; Liu, Tao; Reifsnyder Hickey, Danielle; Janantha, P. A. Praveen; Mkhoyan, K. Andre; Wu, Mingzhong

2017-12-01

For the majority of previous work on Y3Fe5O12 (YIG)/normal metal (NM) bi-layered structures, the YIG layers were grown on Gd3Ga5O12 first and were then capped by an NM layer. This work demonstrates the sputtering growth of a Pt/YIG structure where the Pt layer was grown first and the YIG layer was then deposited on the top. The YIG layer shows well-oriented (111) texture, a surface roughness of 0.15 nm, and an effective Gilbert damping constant less than 4.7 × 10-4, and the YIG/Pt interface allows for efficient spin transfers. This demonstration indicates the feasibility of fabricating high-quality NM/YIG/NM tri-layered structures for new physics studies.

Heat capacity of rare-earth cuprates, orthovanadates, and aluminum garnets, gallium garnets, and iron garnets

NASA Astrophysics Data System (ADS)

Denisova, L. T.; Kargin, Yu. F.; Denisov, V. M.

2015-08-01

The correlation between the heat capacities of rare-earth cuprates, orthovanadates, and garnets with ionic radius R 3+ has been analyzed. It has been shown that the values of C {/p 0} change consistently depending on the radius R 3+ within the corresponding tetrads (La-Nd, Pm-Gd, Gd-Ho, Eu-Lu).

Scintillating screens based on the LPE grown Tb3Al5O12:Ce single crystalline films

NASA Astrophysics Data System (ADS)

Zorenko, Yuriy; Douissard, Paul-Antoine; Martin, Thierry; Riva, Federica; Gorbenko, Vitaliy; Zorenko, Tetiana; Paprocki, Kazimierz; Iskalieva, Aizhan; Witkiewicz, Sandra; Fedorov, Alexander; Bilski, Paweł; Twardak, Anna

2017-03-01

We report in this work the creation of new heavy and efficient Tb3Al5O12:Ce (TbAG:Ce) single crystalline film (SCF) scintillators, grown by LPE method from PbO-B2O3 based flux onto Y3Al5O12 (YAG) and Gd3Ga2.5Al2.5O12 (GAGG) substrates, for different optoelectronic applications. The luminescent and scintillation properties of the TbAG:Ce SCF screens, grown onto different types of substrates, are studied and compared with the properties of the Lu3Al5O12:Ce (LuAG:Ce) and YAG:Ce SCF counterparts. TbAG:Ce SCFs show very high scintillation light yield (LY) under α-particles excitation, which overcomes by 30% the LY of high-quality LuAG:Ce SCF samples. In comparison with YAG:Ce and LuAG:Ce SCFs, TbAG:Ce SCF screens show also significantly lower afterglow (up to 10-4 level at X-ray burst duration of 0.1 s), which is comparable with the afterglow level of the best samples of LSO:Ce, Tb SCFs typically being used now for microimaging. Together with a high light output of X-ray excited luminescence, such extremely low afterglow of TbAG:Ce SCF is a very good reason for future development of scintillating screens based on the mentioned garnet. We also introduce the possibility to create new types of ;film-substrate; hybrid scintillators using the LPE method for simultaneous registration of different components of ionizing radiation and microimaging based on the TbAG:Ce SCF and GAGG:Ce substrates.

Alkali earth co-doping effects on luminescence and scintillation properties of Ce doped Gd3Al2Ga3O12 scintillator

NASA Astrophysics Data System (ADS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-03-01

The Mg and Ca co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by micro pulling down method with a wide concentration range 0-1000 ppm of the codopants. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg and Ca co-doping. The scintillation decays were accelerated by both Mg and Ca codopants. Comparing to Ca co-doping, the Mg co-doped samples showed much faster decay and comparatively smaller light output decrease with increasing Mg dopant concentration.

Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

NASA Astrophysics Data System (ADS)

Ghosh, Kankat; Das, S.; Khiangte, K. R.; Choudhury, N.; Laha, Apurba

2017-11-01

We report structural and electrical properties of hexagonal Gd2O3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd2O3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd2O3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as {{≤ft[ 0 0 0 1 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 0 0 0 1 \\right]}GaN} and {{≤ft[ 1 \\bar{1} 0 0 \\right]}G{{d2}{{O}3}}}||{{≤ft[ 1 \\bar{1} 0 0 \\right]}GaN} . X-ray photoelectron measurements of the valence bands revealed that Gd2O3 exhibits band offsets of 0.97 eV and 0.4 eV, for GaN and Al0.3Ga0.7N, respectively. Electrical measurements such as capacitance-voltage and leakage current characteristics further confirm that epi-Gd2O3 on III-nitrides could be a potential candidate for future metal-oxide-semiconductor (MOS)-based transistors also for high power applications in radio frequency range.

Visible cathodoluminescence of Er ions in β-Ga(2)O(3) nanowires and microwires.

PubMed

Nogales, E; Méndez, B; Piqueras, J

2008-01-23

Erbium doped β-Ga(2)O(3) nanowires and microwires have been obtained by a vapour-solid process from an initial mixture of Ga(2)O(3) and Er(2)O(3) powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as β-Ga(2)O(3) phases in the microwires. Scanning electron microscopy (SEM) images show that the larger microwires have a nearly rectangular cross-section. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of the β-Ga(2)O(3) nanowires. The nanostructures have been studied by means of the cathodoluminescence technique in the scanning electron microscope. Er intraionic blue, green and red emission lines are observed in luminescence spectra even at room temperature, which confirms the optical activity of the rare earth ions in the grown structures. Mapping of the main 555 nm emission intensity shows a non-homogeneous distribution of Er ions in the microstructures.

Y3Fe5O12 nanoparticulate garnet ferrites: Comprehensive study on the synthesis and characterization fabricated by various routes

NASA Astrophysics Data System (ADS)

Niaz Akhtar, Majid; Azhar Khan, Muhammad; Ahmad, Mukhtar; Murtaza, G.; Raza, Rizwan; Shaukat, S. F.; Asif, M. H.; Nasir, Nadeem; Abbas, Ghazanfar; Nazir, M. S.; Raza, M. R.

2014-11-01

The effects of synthesis methods such as sol-gel (SG), self combustion (SC) and modified conventional mixed oxide (MCMO) on the structure, morphology and magnetic properties of the (Y3Fe5O12) garnet ferrites have been studied in the present work. The samples of Y3Fe5O12 were sintered at 950 °C and 1150 °C (by SG and SC methods). For MCMO route the sintering was done at 1350 °C for 6 h. Synthesized samples prepared by various routes were investigated using X-ray diffraction (XRD) analysis, Field emission scanning electron microscopy (FESEM), Impedance network analyzer and transmission electron microscopy (TEM). The structural analysis reveals that the samples are of single phase structure and shows variations in the particle sizes and cells volumes, prepared by various routes. FESEM and TEM images depict that grain size increases with the increase of sintering temperature from 40 nm to 100 nm.Magnetic measurements reveal that garnet ferrite synthesized by sol gel method has high initial permeability (60.22) and low magnetic loss (0.0004) as compared to other garnet ferrite samples, which were synthesized by self combustion and MCMO methods. The M-H loops exhibit very low coercivity which enables the use of these materials in relays and switching devices fabrications. Thus, the garnet nanoferrites with low magnetic loss prepared by different methods may open new horizon for electronic industry for their use in high frequency applications.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Rare-earth substitution in (BiYCa)3(FeSiGe)5O12 bubble films

NASA Technical Reports Server (NTRS)

Luther, L. C.; Slusky, S. E. G.; Brandle, C. D.; Norelli, M. P.

1987-01-01

The substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy (GIA). The presently accepted film composition intended for 6-or 8-micron-period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions, it is observed that YGdHoBilG films posess less (GIA) than their Gd, Ho-free counterparts. Thus, to satisfy (GIA) requirements, the supercooling during growth must be increased by 20 K to 80 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-micron-period memory devices. It can be grown with only 45-50 K supercooling.

Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

DOE PAGES

Yadav, Satyesh K.; Uberuaga, Blas P.; Nikl, Martin; ...

2015-11-24

Complex doping schemes in R 3Al 5O 12 (where R is the rare-earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band gap is altered in a manner that facilitates the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density-functional theory and hybrid density-functional theory (HDFT) are used to survey potential admixing candidates that modify either the conduction-band minimummore » (CBM) or valence-band maximum (VBM). We consider two sets of compositions based on Lu 3B 5O 12 where B is Al, Ga, In, As, and Sb, and R 3Al 5O 12, where R is Lu, Gd, Dy, and Er. We find that admixing with various R cations does not appreciably affect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM, the relative change in band gap is quantitatively validated by HDFT. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. Furthermore, this approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.« less

Scintillation properties of Gd3Al2Ga3O12:Ce (GAGG:Ce): a comparison between monocrystalline and nanoceramic samples

NASA Astrophysics Data System (ADS)

Drozdowski, Winicjusz; Witkowski, Marcin E.; Solarz, Piotr; Głuchowski, Paweł; Głowacki, Michał; Brylew, Kamil

2018-05-01

In this Communication the behavior of two types of Gd3Al2Ga3O12:Ce samples under gamma and X-ray excitation is compared. Single crystals of GAGG:1%Ce have been grown by the Czochralski technique, while nanoceramic pills of GAGG:1%Ce have been fabricated by the LTHP sintering from nanocrystalline powders prepared by the Pechini method. The results of pulse height, scintillation time profile, radioluminescence as a function of temperature, and low temperature thermoluminescence measurements, are reported, indicating that monocrystals are still a better choice for scintillator application, nevertheless some of the properties of nanoceramics are indeed promising and there should be a room for improvement.

β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Gang

2017-10-01

Gallium oxide thin films of β and ε phase were grown on c-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type ε-Ga2O3. Further structure analysis revealed that the epitaxial relationship between ε-Ga2O3 and c-plane sapphire is ε-Ga2O3 (0001) || Al2O3 (0001) and ε-Ga2O3 || Al2O3 . The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored ε phase. Based on these results, a Ga2O3 thin film with a phase-pure ε-Ga2O3 upper layer was successfully obtained.

Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties.

PubMed

Li, Jianye; An, Lei; Lu, Chenguang; Liu, Jie

2006-02-01

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

Dynamic compression of dense oxide (Gd 3Ga 5O 12) from 0.4 to 2.6 TPa: Universal Hugoniot of fluid metals

DOE PAGES

Ozaki, N.; Nellis, W. J.; Mashimo, T.; ...

2016-05-19

Materials at high pressures and temperatures are of great current interest for warm dense matter physics, planetary sciences, and inertial fusion energy research. Shock-compression equation-of-state data and optical reflectivities of the fluid dense oxide, Gd 3Ga 5O 12 (GGG), were measured at extremely high pressures up to 2.6 TPa (26 Mbar) generated by high-power laser irradiation and magnetically-driven hypervelocity impacts. Above 0.75 TPa, the GGG Hugoniot data approach/reach a universal linear line of fluid metals, and the optical reflectivity most likely reaches a constant value indicating that GGG undergoes a crossover from fluid semiconductor to poor metal with minimum metallicmore » conductivity (MMC). These results suggest that most fluid compounds, e.g., strong planetary oxides, reach a common state on the universal Hugoniot of fluid metals (UHFM) with MMC at sufficiently extreme pressures and temperatures. Lastly, the systematic behaviors of warm dense fluid would be useful benchmarks for developing theoretical equation-of-state and transport models in the warm dense matter regime in determining computational predictions.« less

Phase stable rare earth garnets

DOEpatents

Kuntz, Joshua D.; Cherepy, Nerine J.; Roberts, Jeffery J.; Payne, Stephen A.

2013-06-11

A transparent ceramic according to one embodiment includes a rare earth garnet comprising A.sub.hB.sub.iC.sub.jO.sub.12, where h is 3.+-.10%, i is 2.+-.10%, and j is 3.+-.10%. A includes a rare earth element or a mixture of rare earth elements, B includes at least one of aluminum, gallium and scandium, and C includes at least one of aluminum, gallium and scandium, where A is at a dodecahedral site of the garnet, B is at an octahedral site of the garnet, and C is at a tetrahedral site of the garnet. In one embodiment, the rare earth garment has scintillation properties. A radiation detector in one embodiment includes a transparent ceramic as described above and a photo detector optically coupled to the rare earth garnet.

Properties of Exchange Coupled All-garnet Magneto-Optic Thin Film Multilayer Structures

PubMed Central

Nur-E-Alam, Mohammad; Vasiliev, Mikhail; Kotov, Viacheslav A.; Balabanov, Dmitry; Akimov, Ilya; Alameh, Kamal

2015-01-01

The effects of exchange coupling on magnetic switching properties of all-garnet multilayer thin film structures are investigated. All-garnet structures are fabricated by sandwiching a magneto-soft material of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 or Bi3Fe5O12:Dy2O3 in between two magneto-hard garnet material layers of composition type Bi2Dy1Fe4Ga1O12 or Bi2Dy1Fe4Ga1O12:Bi2O3. The fabricated RF magnetron sputtered exchange-coupled all-garnet multilayers demonstrate a very attractive combination of magnetic properties, and are of interest for emerging applications in optical sensors and isolators, ultrafast nanophotonics and magneto-plasmonics. An unconventional type of magnetic hysteresis behavior not observed previously in magnetic garnet thin films is reported and discussed. PMID:28788043

Li+, Na+ and K+ co-doping effects on scintillation properties of Ce:Gd3Ga3Al2O12 single crystals

NASA Astrophysics Data System (ADS)

Yoshino, Masao; Kamada, Kei; Kochurikhin, Vladimir V.; Ivanov, Mikhail; Nikl, Martin; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Shoji, Yasuhiro; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Yoshikawa, Akira

2018-06-01

Ce0.5%: Ce:Gd3Ga3Al2O12(GGAG) single crystals co-doped with 500at.ppm Li+, Na+ and K+ were grown by using the micro-pulling down method. The smooth Ce4+ charge transfer absorption below 350 nm and decay time acceleration were observed in Li co-doped sample. Na+ and K+ co-doping did not show a large effect on the acceleration of decay time compared with Li co-doping. Ce0.5%:GGAG single crystals co-doped with 500 at.ppm Li+ were also grown by the Czochralski method. Optical, scintillation properties and timing performance were evaluated to investigate the effect of univalent alkali metal ions co-doping on Ce:GGAG scintillators. The scintillation decay curves were accelerated by Li co-doping: the decay time was significantly accelerated to 54.8 ns (47%) for the faster component and 158 ns (53%) for the slower component. The light output was 94% of the non co-doped Ce:GGAG standard. The coincidence time resolution was improved to 258 ps by Li co-doping.

Optical properties of bismuth and gallium substituted thulium iron garnet films

NASA Astrophysics Data System (ADS)

Gerhardt, R.; Sure, S.; Dötsch, H.; Linkewitz, T.; Tolksdorf, W.

1993-09-01

Bismuth and gallium substituted films of thulium iron garnet, grown by liquid phase epitaxy on [111] oriented substrates of gadolinium gallium garnet, are investigated for optical isolator applications. At a wavelength of λ = 1.3 μm the optical damping, the refractive index, the optical anisotropy, and the Faraday rotation are measured as function of the substitution level. It turns out that the growth induced optical anisotropy is very small, similar to the magnetic anisotropy. The observed difference between forward and backward propagation constants of TM modes is in excellent agreement with calculations.

Dynamic compression of dense oxide (Gd3Ga5O12) from 0.4 to 2.6 TPa: Universal Hugoniot of fluid metals

PubMed Central

Ozaki, N.; Nellis, W. J.; Mashimo, T.; Ramzan, M.; Ahuja, R.; Kaewmaraya, T.; Kimura, T.; Knudson, M.; Miyanishi, K.; Sakawa, Y.; Sano, T.; Kodama, R.

2016-01-01

Materials at high pressures and temperatures are of great current interest for warm dense matter physics, planetary sciences, and inertial fusion energy research. Shock-compression equation-of-state data and optical reflectivities of the fluid dense oxide, Gd3Ga5O12 (GGG), were measured at extremely high pressures up to 2.6 TPa (26 Mbar) generated by high-power laser irradiation and magnetically-driven hypervelocity impacts. Above 0.75 TPa, the GGG Hugoniot data approach/reach a universal linear line of fluid metals, and the optical reflectivity most likely reaches a constant value indicating that GGG undergoes a crossover from fluid semiconductor to poor metal with minimum metallic conductivity (MMC). These results suggest that most fluid compounds, e.g., strong planetary oxides, reach a common state on the universal Hugoniot of fluid metals (UHFM) with MMC at sufficiently extreme pressures and temperatures. The systematic behaviors of warm dense fluid would be useful benchmarks for developing theoretical equation-of-state and transport models in the warm dense matter regime in determining computational predictions. PMID:27193942

Dynamic compression of dense oxide (Gd3Ga5O12) from 0.4 to 2.6 TPa: Universal Hugoniot of fluid metals.

PubMed

Ozaki, N; Nellis, W J; Mashimo, T; Ramzan, M; Ahuja, R; Kaewmaraya, T; Kimura, T; Knudson, M; Miyanishi, K; Sakawa, Y; Sano, T; Kodama, R

2016-05-19

Materials at high pressures and temperatures are of great current interest for warm dense matter physics, planetary sciences, and inertial fusion energy research. Shock-compression equation-of-state data and optical reflectivities of the fluid dense oxide, Gd3Ga5O12 (GGG), were measured at extremely high pressures up to 2.6 TPa (26 Mbar) generated by high-power laser irradiation and magnetically-driven hypervelocity impacts. Above 0.75 TPa, the GGG Hugoniot data approach/reach a universal linear line of fluid metals, and the optical reflectivity most likely reaches a constant value indicating that GGG undergoes a crossover from fluid semiconductor to poor metal with minimum metallic conductivity (MMC). These results suggest that most fluid compounds, e.g., strong planetary oxides, reach a common state on the universal Hugoniot of fluid metals (UHFM) with MMC at sufficiently extreme pressures and temperatures. The systematic behaviors of warm dense fluid would be useful benchmarks for developing theoretical equation-of-state and transport models in the warm dense matter regime in determining computational predictions.

Synthesis and properties of γ-Ga2O3-Al2O3 solid solutions

NASA Astrophysics Data System (ADS)

Afonasenko, T. N.; Leont'eva, N. N.; Talzi, V. P.; Smirnova, N. S.; Savel'eva, G. G.; Shilova, A. V.; Tsyrul'nikov, P. G.

2017-10-01

The textural and structural properties of mixed oxides Ga2O3-Al2O3, obtained via impregnating γ-Al2O3 with a solution of Ga(NO3)3 and subsequent heat treatment, are studied. According to the results from X-ray powder diffraction, gallium ions are incorporated into the structure of aluminum oxide to form a solid solution of spinel-type γ-Ga2O3-Al2O3 up to a Ga2O3 content of 50 wt % of the total weight of the sample, accompanied by a reduction in the specific surface area, volume, and average pore diameter. It is concluded that when the Ga2O3 content exceeds 50 wt %, the β-Ga2O3 phase is observed along with γ-Ga2O3-Al2O3 solid solution. 71Ga and 27Al NMR spectroscopy shows that gallium replaces aluminum atoms from the tetrahedral position to the octahedral coordination in the structure of γ-Ga2O3-Al2O3.

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Effect of annealing temperature on surface morphology and ultralow ferromagnetic resonance linewidth of yttrium iron garnet thin film grown by rf sputtering

NASA Astrophysics Data System (ADS)

Cao Van, Phuoc; Surabhi, Srivathsava; Dongquoc, Viet; Kuchi, Rambabu; Yoon, Soon-Gil; Jeong, Jong-Ryul

2018-03-01

We report high-quality yttrium-iron-garnet (YIG; Y3Fe5O12) ultrathin films grown on {111} gadolinium-gallium-garnet (GGG; Gd3Ga5O12) substrates using RF sputtering deposition on an off-stoichiometric target and optimized thermal treatments. We measured a narrow peak-to-peak ferromagnetic resonance linewidth (ΔH) whose minimum value was 1.9 Oe at 9.43 GHz for a 60-nm-thick YIG film. This value is comparable to the most recently published value for a YIG thin film grown by pulsed laser deposition. The temperature dependence of the ΔH was investigated systematically, the optimal annealing condition for our growing condition was 875 °C. Structural analysis revealed that surface roughness and crystallinity played an important role in the observed ΔH broadening. Furthermore, the thickness dependence of the ΔH, which indicated that 60 nm thickness was optimal to obtain narrow ΔH YIG films, was also investigated. The thickness dependence of ΔH was understood on the basis of contributions of surface-associated magnon scattering and magnetic inhomogeneities to the ΔH broadening. Other techniques such as transmission electron microscopy, scanning electron microscopy, and X-ray diffraction were used to study the crystalline structure of the YIG films. The high quality of the films in terms of their magnetic properties was expressed through a very low coercivity and high saturation magnetization measured using a vibration sample magnetometer.

Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD

NASA Astrophysics Data System (ADS)

Yousif, A.; Duvenhage, M. M.; Ntwaeaborwa, O. M.; Swart, H. C.

2018-04-01

Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

Investigation of the growth of garnet films by liquid phase epitaxy

NASA Technical Reports Server (NTRS)

Moody, J. W.; Shaw, R. W.; Sandfort, R. M.

1974-01-01

Liquid phase expitaxy was investigated to determine its applicability to fabricating magnetic rare earth garnet films for spacecraft data recording systems. Two mixed garnet systems were investigated in detail: (1) Gd-Y and (2) Eu-Yb-Y. All films were deposited on Gd3Ga5012 substrates. The uniaxial anisotropy of the Gd-Y garnets is primarily stress-induced. These garnets are characterized by high-domain wall mobility, low coercivity and modest anisotropy. Characteristic length was found to be relatively sensitive to temperature. The Eu-Yb-Y garnets exhibit acceptable mobilities, good temperature stability and reasonable quality factors. The uniaxial anisotropy of these garnets is primarily growth-induced. The system is well suited for compositional "tailoring" to optimize specific desirable properties. Liquid phase epitaxy can be used to deposit Gd3Ga5012 spacing layers on magnetic garnet films and this arrangement possesses certain advantages over more conventional magnetic filmspacing layer combinations. However, it cannot be used if the magnetic film is to be ion implanted.

2 inch size Czochralski growth and scintillation properties of Li+ co-doped Ce:Gd3Ga3Al2O12

NASA Astrophysics Data System (ADS)

Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Yoshino, Masao; Okumura, Satoshi; Yamamoto, Seiichi; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshino, Masao; Yoshikawa, Akira

2017-03-01

The 2 inch size Li 0.15 and 1.35 mol% co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Li co-doping. Ce4+ CT absorption below 350 nm is clearly enhanced by Li co-doping as same as divalent ions co-doping. By 1.35 at.% Li co-doping, light yield was decrease to 88% of the Ce: GAGG standard and decay time was accelerated to 34.3ns 21.0%, 84.6ns 68.7%, 480ns 10.3%. The timing resolution measurement for a pair of 3 × 3 × 3mm3 size Li,Ce:GAGG scintillator crystals was performed using Si-PMs and the timing resolution of the 1.35 at.% Li co-doped Ce:GAGG was 218ps.

Rare-Earth Garnets and Perovskites for Space-Based ADR Cooling at High T and Low H

NASA Technical Reports Server (NTRS)

King, T. T.; Rowlett, B. A.; Ramirez, R. A.; Shirron, P. J.; Canavan, E. R.; DiPirro, M. J.; Panek, J. S.; Tuttle, J. G.; Shull, R. D.; Fry, R. A.;

Rare-earth metal gallium silicides via the gallium self-flux method. Synthesis, crystal structures, and magnetic properties of RE(Ga 1–xSi x)₂ (RE=Y, La–Nd, Sm, Gd–Yb, Lu)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darone, Gregory M.; Hmiel, Benjamin; Zhang, Jiliang

Fifteen ternary rare-earth metal gallium silicides have been synthesized using molten Ga as a molten flux. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with three different structures—the early to mid-late rare-earth metals RE=La–Nd, Sm, Gd–Ho, Yb and Y form compounds with empirical formulae RE(Ga xSi 1–x)₂ (0.38≤x≤0.63), which crystallize with the tetragonal α-ThSi₂ structure type (space group I4₁/amd, No. 141; Pearson symbol tI12). The compounds of the late rare-earth crystallize with the orthorhombic α-GdSi₂ structure type (space group Imma, No. 74; Pearson symbol oI12), with refined empirical formula REGa xSi 2–x–y (RE=Ho, Er, Tm;more » 0.33≤x≤0.40, 0.10≤y≤0.18). LuGa₀.₃₂₍₁₎Si₁.₄₃₍₁₎ crystallizes with the orthorhombic YbMn₀.₁₇Si₁.₈₃ structure type (space group Cmcm, No. 63; Pearson symbol oC24). Structural trends are reviewed and analyzed; the magnetic susceptibilities of the grown single-crystals are presented. - Graphical abstract: This article details the exploration of the RE–Ga–Si ternary system with the aim to systematically investigate the structural “boundaries” between the α-ThSi₂ and α-GdSi₂-type structures, and studies of the magnetic properties of the newly synthesized single-crystalline materials. Highlights: • Light rare-earth gallium silicides crystallize in α-ThSi₂ structure type. • Heavy rare-earth gallium silicides crystallize in α-GdSi₂ structure type. • LuGaSi crystallizes in a defect variant of the YbMn₀.₁₇Si₁.₈₃ structure type.« less

Paramagnetic Ce3 + optical emitters in garnets: Optically detected magnetic resonance study and evidence of Gd-Ce cross-relaxation effects

NASA Astrophysics Data System (ADS)

Tolmachev, D. O.; Gurin, A. S.; Uspenskaya, Yu. A.; Asatryan, G. R.; Badalyan, A. G.; Romanov, N. G.; Petrosyan, A. G.; Baranov, P. G.; Wieczorek, H.; Ronda, C.

2017-06-01

Paramagnetic Ce3 +optical emitters have been studied by means of optically detected magnetic resonance (ODMR) via Ce3 + spin-dependent emission in cerium-doped garnet crystals which were both gadolinium free and contain gadolinium in a concentration from the lowest (0.1%) to 100%, i.e., to the superparamagnetic state. It has been shown that the intensity of photoluminescence excited by circularly polarized light into Ce3 + absorption bands can be used for selective monitoring the population of the Ce3 + ground-state spin sublevels. Direct evidence of the cross-relaxation effects in garnet crystals containing two electron spin systems, i.e., the simplest one of Ce3 + ions with the effective spin S =1/2 and the system of Gd3 + ions with the maximum spin S =7/2 , has been demonstrated. Magnetic resonance of Gd3 + has been found by monitoring Ce3 + emission in cerium-doped garnet crystals with gadolinium concentrations of 0.1 at. %, 4%-8%, and 100%, which implies the impact of the Gd3 + spin polarization on the optical properties of Ce3 +. Strong internal magnetic fields in superparamagnetic crystals were shown to modify the processes of recombination between UV-radiation-induced electron and hole centers that lead to the recombination-induced Ce3 + emission. Observation of spikes and subsequent decay in the cross-relaxation-induced ODMR signals under pulsed microwave excitation is suggested to be an informative method to investigate transient processes in the many-spin system of Ce3 +, Gd3 +, and electron and hole radiation-induced centers.

Longitudinal spin Seebeck effect in various garnet ferrites

NASA Astrophysics Data System (ADS)

Uchida, K.; Nonaka, T.; Kikkawa, T.; Kajiwara, Y.; Saitoh, E.

2013-03-01

The longitudinal spin Seebeck effect (LSSE) is investigated in various garnet ferrites Y3-xRxFe5-yMyO12 (R=Gd, Ca; M=Al, Mn, V, In, Zr) by means of the inverse spin Hall effect in Pt films. The magnitude of the LSSE voltage in the Pt/Y3-xRxFe5-yMyO12 samples is found to be enhanced with increasing concentration of Fe in the garnet ferrites, which can be explained by a change in the spin-mixing conductance at the Pt/Y3-xRxFe5-yMyO12 interfaces. We also investigate the dependence of the LSSE voltage on macroscopic magnetic parameters of Y3-xRxFe5-yMyO12. The experimental results show that the LSSE voltage in the Pt/Y3-xRxFe5-yMyO12 samples has a positive correlation with the Curie temperature and the saturation magnetization, but no clear correlation with the gyromagnetic ratio and the Gilbert damping constant of the samples.

Sign reversal of Hall signals in Tm3Fe5O12 /Pt with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Liu, Yawen; Tang, Chi; Xu, Yadong; Shi, Zhong; Shi, Jing

Robust interface strain-induced perpendicular magnetic anisotropy is produced in atomically flat ferromagnetic insulator Tm3Fe5O12 (TIG) films grown with pulsed laser deposition on both substituted-Gd3Ga5O12 and Nd3Ga5O12 (NGG). In TIG/Pt bilayers, we observe large hysteresis loops over a wide range of Pt thicknesses and temperatures. Both the ordinary Hall effect and anomalous Hall effect undergo a sign reversal as the temperature is lowered. The temperature dependence of the Hall signals in bilayers with different thickness of Pt indicates the existence of exchange interaction at the interface. Our results provide a clue to further understand the origin of the anomalous Hall effect in ferromagnetic insulator/normal metal bilayer systems. The work was supported as part of the SHINES, an Energy Frontier Research Center funded by the US Department of Energy, BES under Award No. SC0012670.

Charge-coupled Substituted Garnets (Y3-xCa0.5xM0.5x)Fe5O12 (M = Ce, Th): Structure and Stability as Crystalline Nuclear Waste Forms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Xiaofeng; Kukkadapu, Ravi K.; Lanzirotti, Anthony

2015-04-20

The garnet structure has been proposed as a potential crystalline nuclear waste form for accommodation of actinide elements, especially uranium (U). In this study, yttrium iron garnet (YIG) as a model garnet host was studied for the incorporation of U analogs, cerium (Ce), and thorium (Th), incorporated by a charge-coupled substitution with calci-um (Ca) for yttrium (Y) in YIG, namely 2Y3+ = Ca2+ + M4+, where M4+ = Ce4+ or Th4+. Single phase garnets Y3-xCa0.5xM0.5xFe5O12, synthesized by the citrate-nitrate combustion method, were obtained up to x = 0.7. Ce was confirmed to be tetravalent by X-ray absorption spectroscopy and X-raymore » photoelectron spectroscopy. X-ray diffraction and 57Fe-Mössbauer spectroscopy indicated that the samples are single phase, M4+ and Ca2+ cations are restricted to the c-site, the nature of M4+ has only a minor effect on the structure, and the local environments of both the tetrahedral and octahedral Fe3+ are systematically affected by the extent of substitution, especially on the tetrahedral sublattice. The charge coupled substitution has advantages in incorporating Ce/Th and in stabilizing the substituted phases, compared to a single substitution strategy. Enthalpies of formation of garnets were obtained by high temperature oxide melt solution calorimetry, and the enthalpies of substitution of Ce and Th were determined. The thermodynamic analysis demonstrates that the substituted garnets are entropically rather than energetically stabilized. This suggests that such garnets may form and persist in repositories at high temperature but might decompose near room temperature. These structural and thermodynamic findings shed light on possible incorporation of U in this garnet system.« less

Hydrothermal Synthesis and Photocatalytic Property of β-Ga2O3 Nanorods

NASA Astrophysics Data System (ADS)

Reddy, L. Sivananda; Ko, Yeong Hwan; Yu, Jae Su

2015-09-01

Gallium oxide (Ga2O3) nanorods were facilely prepared by a simple hydrothermal synthesis, and their morphology and photocatalytic property were studied. The gallium oxide hydroxide (GaOOH) nanorods were formed in aqueous growth solution containing gallium nitrate and ammonium hydroxide at 95 °C of growth temperature. Through the calcination treatment at 500 and 1000 °C for 3 h, the GaOOH nanorods were converted into single crystalline α-Ga2O3 and β-Ga2O3 phases. From X-ray diffraction analysis, it could be confirmed that a high crystalline quality of β-Ga2O3 nanorods was achieved by calcinating at 1000 °C. The thermal behavior of the Ga2O3 nanorods was also investigated by differential thermal analysis, and their vibrational bands were identified by Fourier transform infrared spectroscopy. In order to examine the photocatalytic activity of samples, the photodegradation of Rhodamine B solution was observed under UV light irradiation. As a result, the α-Ga2O3 and β-Ga2O3 nanorods exhibited high photodegeneration efficiencies of 62 and 79 %, respectively, for 180 min of UV irradiation time.

Hydrothermal Synthesis and Photocatalytic Property of β-Ga2O3 Nanorods.

PubMed

Reddy, L Sivananda; Ko, Yeong Hwan; Yu, Jae Su

2015-12-01

Gallium oxide (Ga2O3) nanorods were facilely prepared by a simple hydrothermal synthesis, and their morphology and photocatalytic property were studied. The gallium oxide hydroxide (GaOOH) nanorods were formed in aqueous growth solution containing gallium nitrate and ammonium hydroxide at 95 °C of growth temperature. Through the calcination treatment at 500 and 1000 °C for 3 h, the GaOOH nanorods were converted into single crystalline α-Ga2O3 and β-Ga2O3 phases. From X-ray diffraction analysis, it could be confirmed that a high crystalline quality of β-Ga2O3 nanorods was achieved by calcinating at 1000 °C. The thermal behavior of the Ga2O3 nanorods was also investigated by differential thermal analysis, and their vibrational bands were identified by Fourier transform infrared spectroscopy. In order to examine the photocatalytic activity of samples, the photodegradation of Rhodamine B solution was observed under UV light irradiation. As a result, the α-Ga2O3 and β-Ga2O3 nanorods exhibited high photodegeneration efficiencies of 62 and 79 %, respectively, for 180 min of UV irradiation time.

The solubility and site preference of Fe{sup 3+} in Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rettenwander, D., E-mail: daniel.rettenwander@sbg.ac.at; Geiger, C.A.; Tribus, M.

2015-10-15

A series of Fe{sup 3+}-bearing Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZO) garnets was synthesized using solid-state synthesis methods. The synthetic products were characterized compositionally using electron microprobe analysis and inductively coupled plasma optical emission spectroscopy (ICP-OES) and structurally using X-ray powder diffraction and {sup 57}Fe Mössbauer spectroscopy. A maximum of about 0.25 Fe{sup 3+} pfu could be incorporated in Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnet solid solutions. At Fe{sup 3+} concentrations lower than about 0.16 pfu, both tetragonal and cubic garnets were obtained in the synthesis experiments. X-ray powder diffraction analysis showed only a garnet phase for syntheses withmore » starting materials having intended Fe{sup 3+} contents lower than 0.52 Fe{sup 3+} pfu. Back-scattered electron images made with an electron microprobe also showed no phase other than garnet for these compositions. The lattice parameter, a{sub 0}, for all solid-solution garnets is similar with a value of a{sub 0}≈12.98 Å regardless of the amount of Fe{sup 3+}. {sup 57}Fe Mössbauer spectroscopic measurements indicate the presence of poorly- or nano-crystalline FeLaO{sub 3} in syntheses with Fe{sup 3+} contents greater than 0.16 Fe{sup 3+} pfu. The composition of different phase pure Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnets, as determined by electron microprobe (Fe, La, Zr) and ICP-OES (Li) measurements, give Li{sub 6.89}Fe{sub 0.03}La{sub 3.05}Zr{sub 2.01}O{sub 12}, Li{sub 6.66}Fe{sub 0.06}La{sub 3.06}Zr{sub 2.01}O{sub 12}, Li{sub 6.54}Fe{sub 0.12}La{sub 3.01}Zr{sub 1.98}O{sub 12}, and Li{sub 6.19}Fe{sub 0.19}La{sub 3.02}Zr{sub 2.04}O{sub 12}. The {sup 57}Fe Mössbauer spectrum of cubic Li{sub 6.54}Fe{sub 0.12}La{sub 3.01}Zr{sub 1.98}O{sub 12} garnet indicates that most Fe{sup 3+} occurs at the special crystallographic 24d position, which is the standard tetrahedrally coordinated site in garnet. Fe{sup 3+} in

Spin-phonon coupling and exchange interaction in Gd substituted YFe0.5Cr0.5O3

NASA Astrophysics Data System (ADS)

Singh, Karan; Sharma, Mohit K.; Mukherjee, K.

2018-02-01

We report the evolution of physical properties due to partial substitution of Gd on the Y site in a mixed metal oxide YFe0.5Cr0.5O3. This compound exhibits negative magnetization at low applied fields. Our investigations on Y1-xGdxFe0.5Cr0.5O3 (x = 0.0, 0.2, 0.4 and 0.6) compounds is carried out through magnetization and Raman spectroscopy studies. It is observed that even with 20% Gd substitution, the negative magnetization observed in YFe0.5Cr0.5O3 is suppressed. Due to magnetic rare earth ion Gd3+, additional exchange interaction of the form Gd-O-Fe/Cr dominates the magnetic interaction arising due to the transition metal ions. This results in positive magnetization in Gd-substituted compounds. Temperature dependent Raman spectroscopy along with magnetization studies revealed that the observed shifts of Raman mode is due to spin-phonon coupling. Hardening of Raman mode observed below 240 K in YFe0.5Cr0.5O3 weakens and softening of phonon modes was observed for Y0.4Gd0.6Fe0.5Cr0.5O3 compound. This implies that additional magnetic interactions due to Gd ions play a dominating role in dictating the behavior of the Gd-substituted compounds.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

Crystal Structure of Garnet-Related Li-Ion Conductor Li7–3xGaxLa3Zr2O12: Fast Li-Ion Conduction Caused by a Different Cubic Modification?

PubMed Central

2016-01-01

Li-oxide garnets such as Li7La3Zr2O12 (LLZO) are among the most promising candidates for solid-state electrolytes to be used in next-generation Li-ion batteries. The garnet-structured cubic modification of LLZO, showing space group Ia-3d, has to be stabilized with supervalent cations. LLZO stabilized with Ga3+ shows superior properties compared to LLZO stabilized with similar cations; however, the reason for this behavior is still unknown. In this study, a comprehensive structural characterization of Ga-stabilized LLZO is performed by means of single-crystal X-ray diffraction. Coarse-grained samples with crystal sizes of several hundred micrometers are obtained by solid-state reaction. Single-crystal X-ray diffraction results show that Li7–3xGaxLa3Zr2O12 with x > 0.07 crystallizes in the acentric cubic space group I-43d. This is the first definite record of this cubic modification for LLZO materials and might explain the superior electrochemical performance of Ga-stabilized LLZO compared to its Al-stabilized counterpart. The phase transition seems to be caused by the site preference of Ga3+. 7Li NMR spectroscopy indicates an additional Li-ion diffusion process for LLZO with space group I-43d compared to space group Ia-3d. Despite all efforts undertaken to reveal structure–property relationships for this class of materials, this study highlights the potential for new discoveries. PMID:27019548

Tin-Assisted Synthesis of ɛ -Ga2O3 by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Kracht, M.; Karg, A.; Schörmann, J.; Weinhold, M.; Zink, D.; Michel, F.; Rohnke, M.; Schowalter, M.; Gerken, B.; Rosenauer, A.; Klar, P. J.; Janek, J.; Eickhoff, M.

2017-11-01

The synthesis of ɛ -Ga2O3 and β -Ga2O3 by plasma-assisted molecular beam epitaxy on (001 )Al2O3 substrates is studied. The growth window of β -Ga2O3 in the Ga-rich regime, usually limited by the formation of volatile gallium suboxide, is expanded due to the presence of tin during the growth process, which stabilizes the formation of gallium oxides. X-ray diffraction, transmission electron microscopy, time-of-flight secondary-ion mass spectrometry, Raman spectroscopy, and atomic force microscopy are used to analyze the influence of tin on the layer formation. We demonstrate that it allows the synthesis of phase-pure ɛ -Ga2O3 . A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

Polycrystalline (TbXY1-X)2O3 Faraday rotator.

PubMed

Ikesue, Akio; Aung, Yan Lin; Makikawa, Shinji; Yahagi, Akira

2017-11-01

We have succeeded for the first time in synthesizing an optical grade (Tb X Y 1-X ) 2 O 3 (X=0.5-1.0) ceramic Faraday rotator, which greatly exceeds the basic characteristics of the commercial terbium gallium garnet (TGG) (Tb 3 Ga 5 O 12 ) crystal. The Faraday rotation angle increased as the Tb concentration increased, and the Verdet constant increased from 2.1 (82  rad T -1  m -1 at X=0.5) to 3.8 times (154  rad T -1  m -1 at X=1.0) than the TGG single crystal, which is regarded as highest class. Therefore, it is possible to minimize the Faraday rotator length and the magnet in building an optical isolator. It was also confirmed that its optical quality was very comparable to the commercial TGG crystal.

Luminescent properties of Tm3-xLuxAl5O12:Ce single crystalline films

NASA Astrophysics Data System (ADS)

Zorenko, Yu.; Gorbenko, V.; Zorenko, T.; Suchocki, A.; Zhydachevskyy, Ya.; Fabisiak, K.; Paprocki, K.; Bilski, P.; Twardak, A.; Fedorov, A.

2017-07-01

The work devoted to the investigation of a new luminescent and scintillation material based on the single crystalline films (SCFs) of Tm3-xLuxAG:Ce garnet; x = 0-1.5, grown by LPE method from PbO based flux. The best scintillation properties are achieved for SCFs of Tm1.5Lu1.5Al5O12:Ce composition. We have found that direct Tm → Ce and backside Ce → Tm energy transfer processes are observed in Tm1.5Lu1.5Al5O12:Ce. Due to elimination of traps in the 300-450 °C range, the relatively fast scintillation decay is realized in highly doped Tm1.5Lu1.5Al5O12:Ce SCFs. For this reason, Tm doping can be considered as a suitable way for improvement of the scintillation efficiency in other Ce3+ doped garnet compounds.

Study of GaN nanorods converted from β-Ga2O3

NASA Astrophysics Data System (ADS)

Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

2018-05-01

We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

Suitability of the rare-earth compounds Dy2Ti2O7 and Gd3Al5O12 for low temperature (4K-20K) magnetic refrigeration cycle

NASA Technical Reports Server (NTRS)

Flood, D. J.

1973-01-01

Measurements were made of the magnetic entropy and magnetization of powered samples of the compounds Dy2Ti2O7 and Gd3Al5O12. The magnetization was measured for temperatures at and below 4.2 K, in applied fields ranging to 7.0 tesla. Isothermal changes in magnetic entropy were measured for temperatures from 1.2 to 20 K, in applied fields up to 10 tesla. The results of the measurements are consistent with a doublet ground state for Dy2Ti2O7, and an eight-fold degenerate ground state for Gd3Al5O12. Absolute values of magnetic entropy have been obtained at the lower temperatures, permitting the isotherms to be properly located in the S-H plane with the use of adiabatic magnetization data. The iso-field lines in the S-T plane were determined. The results indicate that Dy2Ti2O7 can absorb a maximum of 71 + or - 4 joules/kg of heat at 4.2 K, while Gd3Al5O12 can absorb 233 + or - joules/kg at the same temperature. The large difference between the two is most likely a result of crystal field interactions in the dysoprosium compound. Both materials can be cycled adiabatically between 4.2 and 20 K.

Growth of self-textured Ga3+-substituted Li7La3Zr2O12 ceramics by solid state reaction and their significant enhancement in ionic conductivity

NASA Astrophysics Data System (ADS)

Qin, Shiying; Zhu, Xiaohong; Jiang, Yue; Ling, Ming'en; Hu, Zhiwei; Zhu, Jiliang

2018-03-01

A highly self-textured Ga2O3-substituted Li7La3Zr2O12 (LLZO-Ga) solid electrolyte with a nominal composition of Li6.55Ga0.15La3Zr2O12 is obtained by a simple and low-cost solid-state reaction technique, requiring no seed crystals to achieve grain orientation. The as-prepared self-textured LLZO-Ga shows a strong (420) preferred orientation with a high Lotgering factor of 0.91. Coherently, a terrace-shaped microstructure consisting of many parallel layers, indicating a two-dimensional-like growth mode, is clearly observed in the self-textured sample. As a result, the highly self-textured garnet-type lithium-ion conducting solid electrolyte of LLZO-Ga exhibits an extremely high ionic conductivity, reaching a state-of-the-art level of 2.06 × 10-3 S cm-1 at room temperature (25 °C) and thus shedding light on an important strategy for improving the structure and ionic conductivity of solid electrolytes.

Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization.

PubMed

Sinha, Godhuli; Ganguli, Dibyendu; Chaudhuri, Subhadra

2008-03-01

Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.

Synthesis of complex oxides with garnet structure by spray drying of an aqueous salt solution

NASA Astrophysics Data System (ADS)

Makeenko, A. V.; Larionova, T. V.; Klimova-Korsmik, O. G.; Starykh, R. V.; Galkin, V. V.; Tolochko, O. V.

2017-04-01

The use of spray drying to obtain powders of complex oxides with a garnet structure has demonstrated. The processes occurring during heating of the synthesized oxide-salt product, leading to the formation of a material with a garnet structure, have been investigated using DTA, TGA, XPS, and XRD. It has been shown that a single-phase garnet structure of system (Y x Gd(3- x))3Al5O12 can be synthesized over the entire range of compositions.

The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga2O3/gallium-indium eutectic junctions.

PubMed

Reus, William F; Thuo, Martin M; Shapiro, Nathan D; Nijhuis, Christian A; Whitesides, George M

2012-06-26

The liquid-metal eutectic of gallium and indium (EGaIn) is a useful electrode for making soft electrical contacts to self-assembled monolayers (SAMs). This electrode has, however, one feature whose effect on charge transport has been incompletely understood: a thin (approximately 0.7 nm) film-consisting primarily of Ga(2)O(3)-that covers its surface when in contact with air. SAMs that rectify current have been measured using this electrode in Ag(TS)-SAM//Ga(2)O(3)/EGaIn (where Ag(TS) = template-stripped Ag surface) junctions. This paper organizes evidence, both published and unpublished, showing that the molecular structure of the SAM (specifically, the presence of an accessible molecular orbital asymmetrically located within the SAM), not the difference between the electrodes or the characteristics of the Ga(2)O(3) film, causes the observed rectification. By examining and ruling out potential mechanisms of rectification that rely either on the Ga(2)O(3) film or on the asymmetry of the electrodes, this paper demonstrates that the structure of the SAM dominates charge transport through Ag(TS)-SAM//Ga(2)O(3)/EGaIn junctions, and that the electrical characteristics of the Ga(2)O(3) film have a negligible effect on these measurements.

Tunable Microwave Transversal Filters and Dispersive Delay Lines Based on Oblique Incidence Reflection of Magnetostatic Wave Propagating in Epitaxial Garnets.

DTIC Science & Technology

1986-09-30

surface. Ferromagnetic resonance measurements on Ion implanted garnet films (2.18, 2.19) have confirmed that the principal effects of ion implantation...Yttrium Iro Garnet (Y 3FesO1 2 ) films used in the experiments were grown or one Inch polished [111] oriented Gadolinium Gallium Garnet (GGG) wafers, by...Yttrium Iron Garnet ) films grown on 0.5mm thick substrate of GGG (Gadolinium Gallium Garnet ). Samples were angle lapped to optimize coupling into and

Optical investigation of domain resonances in magnetic garnet films

NASA Astrophysics Data System (ADS)

Bahlmann, N.; Gerhardt, R.; Dötsch, H.

1996-08-01

Magnetic garnet films of composition (Y,Bi) 3(Fe,Al) 5O 12 are grown by liquid phase epitaxy on [111] oriented substrates of Gd 3Ga 5O 12. Lattices of parallel stripe domains are stabilized by a static induction applied in the film plane. The two branches DR ± of the domain resonance and the domain wall resonance DWR are excited by microwave magnetic fields in the frequency range up to 6 GHz. Light passing the stripe domain lattice parallel to the film normal is modulated at the excitation frequency. A modulation bandwidth of more than 2 GHz is observed. The resonances can be calculated with high accuracy by a hybridization model, if the quality factor Q of the film exceeds 0.5. For Q < 0.5 a simple approximation is used to describe the superposition of the DR + and DR - resonances. The superposition model predicts two stability states of the resonance DR + which are observed experimentally. From the optical measurements precession angles of the resonance DR - of nearly 6° and wall oscillation amplitudes up to 25 nm are derived.

First principles study of gallium cleaning for hydrogen-contaminated α-Al2O3(0001) surfaces.

PubMed

Yang, Rui; Rendell, Alistair P

2013-05-15

The use of gallium for cleaning hydrogen-contaminated Al2O3 surfaces is explored by performing first principles density functional calculations of gallium adsorption on a hydrogen-contaminated Al-terminated α-Al2O3(0001) surface. Both physisorbed and chemisorbed H-contaminated α-Al2O3(0001) surfaces with one monolayer (ML) gallium coverage are investigated. The thermodynamics of gallium cleaning are considered for a variety of different asymptotic products, and are found to be favorable in all cases. Physisorbed H atoms have very weak interactions with the Al2O3 surface and can be removed easily by the Ga ML. Chemisorbed H atoms form stronger interactions with the surface Al atoms. Bonding energy analysis and departure simulations indicate, however, that chemisorbed H atoms can be effectively removed by the Ga ML. Copyright © 2013 Wiley Periodicals, Inc.

Laser and thermal properties of Nd:YGd2Sc2Al2GaO12 garnet ceramic Laser and thermal properties of Nd:YSGG garnet ceramic

NASA Astrophysics Data System (ADS)

Brenier, A.; Alombert-Goget, G.; Guyot, Y.; Boulon, G.

2012-10-01

The absorption and fluorescence properties of the Nd-doped YGd2Sc2Al2GaO12 mixed garnet ceramics have been measured at different temperatures. Under laser diode pumping an efficient laser emission has been demonstrated with 45% slope efficiency. The emission is constituted by two lines at 1058.6 and 1061.3 nm, subjected to a red shift and a variable relative intensity versus pump power. The role of the temperature has been investigated playing with the cavity parameters. The thermal conductivity of the 1% Nd-doped material has been determined (3.2 W/m/K) measuring the radial temperature distribution of the exit face of the sample including the axial heat flow in the analysis. The M2 beam quality factor and the dioptric power of the thermal lens have been investigated versus the pump power. The thermo-optic coefficient χ was determined as 44.4×10-6 K-1.

Paramagnetic Spin Seebeck Effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M.; Pearson, John E.; Bhattacharya, Anand

2015-05-01

We report the observation of the longitudinal spin Seebeck effect in paramagnetic insulators. By using a microscale on-chip local heater, we generate a large thermal gradient confined to the chip surface without a large increase in the total sample temperature. Using this technique at low temperatures (< 20 K), we resolve the paramagnetic spin Seebeck effect in the insulating paramagnets Gd3Ga5O12 (gadolinium gallium garnet) and DyScO3 (DSO), using either W or Pt as the spin detector layer. By taking advantage of the strong magnetocrystalline anisotropy of DSO, we eliminate contributions from the Nernst effect in W or Pt, which producesmore » a phenomenologically similar signal.« less

Electronic shell structure in Ga12 icosahedra and the relation to the bulk forms of gallium.

PubMed

Schebarchov, D; Gaston, N

2012-07-28

The electronic structure of known cluster compounds with a cage-like icosahedral Ga(12) centre is studied by first-principles theoretical methods, based on density functional theory. We consider these hollow metalloid nanostructures in the context of the polymorphism of the bulk, and identify a close relation to the α phase of gallium. This previously unrecognised connection is established using the electron localisation function, which reveals the ubiquitous presence of radially-pointing covalent bonds around the Ga(12) centre--analogous to the covalent bonds between buckled deltahedral planes in α-Ga. Furthermore, we find prominent superatom shell structure in these clusters, despite their hollow icosahedral motif and the presence of covalent bonds. The exact nature of the electronic shell structure is contrasted with simple electron shell models based on jellium, and we demonstrate how the interplay between gallium dimerisation, ligand- and crystal-field effects can alter the splitting of the partially filled 1F shell. Finally, in the unique compound where the Ga(12) centre is bridged by six phosphorus ligands, the electronic structure most closely resembles that of δ-Ga and there are no well-defined superatom orbitals. The results of this comprehensive study bring new insights into the nature of chemical bonding in metalloid gallium compounds and the relation to bulk gallium metal, and they may also guide the development of more general models for ligand-protected clusters.

Effect of Gallium Substitution on Lithium-Ion Conductivity and Phase Evolution in Sputtered Li7-3 xGa xLa3Zr2O12 Thin Films.

PubMed

Rawlence, M; Filippin, A N; Wäckerlin, A; Lin, T-Y; Cuervo-Reyes, E; Remhof, A; Battaglia, C; Rupp, J L M; Buecheler, S

2018-04-25

Replacing the liquid electrolyte in conventional lithium-ion batteries with thin-film solid-state lithium-ion conductors is a promising approach for increasing energy density, lifetime, and safety. In particular, Li 7 La 3 Zr 2 O 12 is appealing due to its high lithium-ion conductivity and wide electrochemical stability window. Further insights into thin-film processing of this material are required for its successful integration into solid-state batteries. In this work, we investigate the phase evolution of Li 7-3 x Ga x La 3 Zr 2 O 12 in thin films with various amounts of Li and Ga for stabilizing the cubic phase. Through this work, we gain valuable insights into the crystallization processes unique to thin films and are able to form dense Li 7-3 x Ga x La 3 Zr 2 O 12 layers stabilized in the cubic phase with high in-plane lithium-ion conductivities of up to 1.6 × 10 -5 S cm -1 at 30 °C. We also note the formation of cubic Li 7 La 3 Zr 2 O 12 at the relatively low temperature of 500 °C.

Growth and characterization of spindle-like Ga2O3 nanocrystals by electrochemical reaction in hydrofluoric solution

NASA Astrophysics Data System (ADS)

Feng, Lungang; Li, Yufeng; Su, Xilin; Wang, Shuai; Liu, Hao; Wang, Jiangteng; Gong, Zhina; Ding, Wen; Zhang, Ye; Yun, Feng

2016-12-01

We report a novel fabrication method of spindle-like gallium oxide (Ga2O3) nanocrystals via two steps processed by electrochemical reaction of the MOVPE-grown GaN epitaxial layer in HF/ethanol (1:6) electrolyte and subsequent heat treatment. Depending on the electrolyte concentration, reaction time and applied voltage, micrometer- to nanometer-size spindle-like gallium fluoride tri-hydrate (GaF3·3H2O) of different densities and geometrical dimensions were formed on the surface of GaN. EDS, XPS and XRD were used to characterize the properties of the material before and after heat treatment. It is found that due to heat treatment at above 600 °C, nanocrystalline Ga2O3 were transformed from the GaF3·3H2O via pyrohydrolysis reaction mechanism. The band gap of ∼5.1 eV of the spindle-like Ga2O3 was measured by the optical absorption spectroscopy.

Sol-gel syntheses, luminescence, and energy transfer properties of α-GdB5O9:Ce(3+)/Tb(3+) phosphors.

PubMed

Sun, Xiaorui; Gao, Wenliang; Yang, Tao; Cong, Rihong

2015-02-07

Sol-gel method was applied to prepare homogenous and highly crystalline phosphors with the formulas α-GdB5O9:xTb(3+) (0 ≤ x ≤ 1), α-Gd1-xCexB5O9 (0 ≤ x ≤ 0.40), α-GdB5O9:xCe(3+), 0.30Tb(3+) (0 ≤ x ≤ 0.15) and α-GdB5O9:0.20Ce(3+), xTb(3+) (0 ≤ x ≤ 0.10). The success of the syntheses was proved by the linear shrinkage or expansion of the cell volumes against the substitution contents. In α-GdB5O9:xTb(3+), an efficient energy transfer from Gd(3+) to Tb(3+) was observed and there was no luminescence quenching. The exceptionally high efficiency of the f-f excitations of Tb(3+) implies that these phosphors may be good green-emitting UV-LED phosphors. For α-Gd1-xCexB5O9, Ce(3+) absorbs the majority of the energy and transfers it to Gd(3+). Therefore, the co-doping of Ce(3+) and Tb(3+) leads to a significant enhancement in the green emission of Tb(3+). Our current results together with the study on α-GdB5O9:xEu(3+) in the literature indicate that α-GdB5O9 is a good phosphor host with advantages including controllable preparation, diverse cationic doping, the absence of concentration quenching, and effective energy transfer.

Lifetime laser damage performance of β -Ga2O3 for high power applications

NASA Astrophysics Data System (ADS)

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

2018-03-01

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

2018-04-01

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

Structural and electrochemical properties of Gd-doped Li4Ti5O12 as anode material with improved rate capability for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, Qianyu; Verde, Michael G.; Seo, Joon Kyo; Li, Xi; Meng, Y. Shirley

2015-04-01

Pristine and Gd-doped Li4Ti5O12 (LTO) in the form of Li4-x/3Ti5-2x/3GdxO12 (x = 0.05, 0.10 and 0.15) were prepared by a simple solid-state reaction in air. The structural and electrochemical properties of the as-prepared powders were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). XRD revealed that only a small amount of the dopant can enter the lattice structure of LTO; excessive addition beyond x = 0.10 resulted in a discrete Gd2O3 impurity phase. The Gd doping did not change the spinel structure and electrochemical reaction process of LTO. The average particle size of as-prepared samples ranged between 0.5 and 1.5 μm. The Gd-doped materials showed much improved rate capability and specific capacity compared with undoped LTO. In particular, Li4-x/3Ti5-2x/3GdxO12 (x = 0.5) exhibited the best rate capability and cycling stability among all samples. Beyond this doping level, however, Gd2O3 impurity phase in the LTO led to adverse electrochemical performance. The rate capability of the anode material made from the modified powder is significantly improved when discharged at high current rates due to the reduced charge transfer resistance and fast lithium insertion/extraction kinetics.

Dense garnet-like Li5La3Nb2O12 solid electrolyte prepared by self-consolidation method

NASA Astrophysics Data System (ADS)

Zhao, Pengcheng; Xiang, Yu; Xu, Yan; Wen, Yuehua; Zhang, Wenfeng; Zhu, Xiayu; Li, Meng; Zhang, Sontong; Ming, Hai; Jin, Zhaoqing; Cao, Gaoping

2018-06-01

Li5La3Nb2O12 (LLNO) is a typical garnet-like solid electrolyte with solitary cubic structure. However, its ionic conductivity is relatively low due to the low relative density when prepared by cold isostatic pressing method, which usually involves high-pressure machines, poor productivity, tedious pressing operations, and low density. In this paper, self-consolidation method is developed to sinter dense LLNO electrolyte. Although not any pressing operations are employed in the entire process, the relative density of LLNO is promoted up to 95%, which is much higher than the reported values of 45-80%. SEM images reveal that the sample is built by huge particles in size of 80 μm indicating that there are few boundaries in the sample. Moreover, a rich content of Li-Al-O compounds is detected out in the boundary areas, which may act as sintering aids for the sample to consolidate automatically. According to the highest density, the bulk ionic conductivity of LLNO sample reaches up to 1.61 × 10-4 S cm-1 at 30 °C, which is in the same order of magnitude as the value of cubic Li7La3Zr2O12 electrolyte. This work verifies the self-consolidation mechanism for the sintering of ceramic electrolytes and could significantly facilitate the development of LLNO membrane technology.

Lanthanide (Nd, Gd) compounds with garnet and monazite structures. Powders synthesis by "wet" chemistry to sintering ceramics by Spark Plasma Sintering

NASA Astrophysics Data System (ADS)

Potanina, Ekaterina; Golovkina, Ludmila; Orlova, Albina; Nokhrin, Aleksey; Boldin, Maksim; Sakharov, Nikita

2016-05-01

Complex oxide Y2.5Nd0.5Al5O12 with garnet structure and phosphates NdPO4 and GdPO4 with monazite structure were obtained by using precipitation methods. Ceramics Y2.5Nd0.5Al5O12 and NdPO4 were processed by Spark Plasma Sintering (SPS). Relative density more 98%, sintering time did not exceed 8 min, sintering temperature 1330-1390 °C. Leaching rates of elements from ceramics were 10-6-10-7 g/(cm2 d). The process of ceramics sintering has two-stage character: the first step of sintering-compaction process is related to the plastic flow of the material, the second step-to the process of grain boundary diffusion and grain growth.

On the Samarium Substitution Effects in Y3-x Sm x Al5O12 (x = 0.1-3.0)

NASA Astrophysics Data System (ADS)

Skaudzius, Ramunas; Sakirzanovas, Simas; Kareiva, Aivaras

2018-04-01

Yttrium aluminium garnet substituted by samarium Y3-x Sm x Al5O12, (YSmAG, x = 0.1, 0.15, 0.25, 0.5, 0.75, 1.0, 1.5, 2.0, 2.5 and 3.0) was prepared by an aqueous sol-gel processing using etane-1,2-diol as complexing agent. The end products obtained at 1000°C in air were characterized by x-ray diffraction analysis, infrared spectroscopy (FT-IR) and scanning electron microscopy. It was demonstrated, however, that the total substitution of yttrium by samarium does not proceed in the YSmAG. The single cubic garnet phase was formed only at a low concentration of samarium (x = 0.1, 0.15, 0.25, 0.5, 0.75, 1.0). With further substitutional levels, if the amount of samarium was x = 1.5, 2.0, 2.5 and 3, respectively, the formation a of minor amount of side perovskite samarium aluminate SmAlO3 (SmAP) phase was observed. Surprisingly, when yttrium was totally replaced by the samarium (x = 3.0) the main synthesis product was SmAP. The possible formation of Sm3Al5O12 (SmAG) garnet was also investigated for the first time by variation of the temperature in the range of 780-835°C.

Magnetic and fluorescence properties of cerium-doped yttrium gadolinium aluminum iron garnet crystals

NASA Astrophysics Data System (ADS)

Aoki, Daichi; Shima, Mutsuhiro

2014-11-01

Magnetic and fluorescence properties of chemically synthesized Ce:Gd-YAIG (Ce0.05GdxY2.95-xAl5-yFeyO12) nanocrystals have been investigated. The structural characterization by X-ray diffraction (XRD) shows that a garnet phase has been identified in samples with 0 ≤ x ≤ 2.95 and 0 ≤ y ≤ 3.0. When y = 0, only garnet peaks are observed for 0 ≤ x ≤ 2.5, while both garnet and perovskite phases are present for x > 2.5. It is found from XRD Rietveld analyses that the site occupancy of Fe3+ at the tetrahedral and octahedral sites in the garnet is independent of the amount of Y3+ substituted by Ce3+ and Gd3+ at the dodecahedral sites. The saturation magnetization for the sample with x = 0 and y = 3.0 is 4.35 emu/g, while that with x = 2.5 and y = 3.0 is 87.5 emu/g. When the Fe3+ composition y is varied from 0 to 3.0 at x = 2.5, the intensity of fluorescence at the emission wavelength ˜570 nm significantly decreases presumably due to absorption by Fe3+ that is increased in the crystal.

Single crystal Ce doped scintillator material with garnet structure sensitive to gamma ray and neutron radiation

NASA Astrophysics Data System (ADS)

Solodovnikov, D.; Weber, M. H.; Haven, D. T.; Lynn, K. G.

2012-08-01

A mixed garnet scintillator host material is obtained from the melt—Yttrium Gadolinium Gallium Aluminum Garnet (YGGAG). In addition to the high thermal and chemical stability and radiation hardness found in garnet crystals, it offers sensitivity to neutrons due to the presence of Gd atoms, has lower melting temperature than yttrium aluminum garnet, and similar crystallization behavior suitable for growth of large volume crystals. Crystals of YGGAG doped with Ce of 10×10×10 mm3 have already demonstrated energy resolution of 10% at 662 keV.

Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs

DTIC Science & Technology

2017-10-01

showing double the power of a single 1.2-mm HEMT with 55% PAE at a comparable gain compression level. 3. Summary and Conclusion A preliminary design of...combined, 2.4-mm HEMT power amplifier should achieve comparable performance based on a preliminary design using ideal, lossless matching elements. For...ARL-TR-8180 ● OCT 2017 US Army Research Laboratory Broadband 1.2- and 2.4-mm Gallium Nitride (GaN) Power Amplifier Designs by

Gallium-containing phospho-silicate glasses: synthesis and in vitro bioactivity.

PubMed

Franchini, Mirco; Lusvardi, Gigliola; Malavasi, Gianluca; Menabue, Ledi

2012-08-01

A series of Ga-containing phospho-silicate glasses based on Bioglass 45S5, having molar formula 46.2SiO2·24.3Na2O·26.9CaO·2.6P2O5·xGa2O3 (x=1.0, 1.6, 3.5), were prepared by fusion method. The reference Bioglass 45S5 without gallium was also prepared. The synthesized glasses were immersed in simulated body fluid (SBF) for 30 days in order to observe ion release and hydroxyapatite (HA) formation. All Ga-containing glasses maintain the ability of HA formation as indicated by main X-ray diffractometric peaks and/or electronic scanning microscopy results. HA layer was formed after 1 day of SBF soaking in 45S5 glass containing up to 1.6% Ga2O3 content. Moreover, gallium released by the glasses was found to be partially precipitated on the glass surface as gallium phosphate. Further increase in gallium content reduced the ion release in SBF. The maximum of Ga(3+) concentration measured in solution is ~6 ppm determined for 3.5% Ga2O3 content. This amount is about half of the toxic level (14 ppm) of gallium and the glasses release gallium till 30 days of immersion in SBF. Considering the above results, the studied materials can be proposed as bioactive glasses with additional antimicrobial effect of gallium having no toxic outcome. Copyright © 2012 Elsevier B.V. All rights reserved.

K3 Li3 Gd7 (BO3 )9 : A New Gadolinium-Rich Orthoborate for Cryogenic Magnetic Cooling.

PubMed

Xia, Mingjun; Shen, Shipeng; Lu, Jun; Sun, Young; Li, Rukang

2018-03-02

Magnetic cooling technology based on magnetocaloric effect (MCE) has attracted great interest in obtaining extremely low temperatures, for example, for space exploration. Here, we grew a new gadolinium-rich orthoborate K 3 Li 3 Gd 7 (BO 3 ) 9 (1) as a promising cryogenic magnetic coolant. It exhibits a complicated three dimensional framework constructed from BO 3 groups and gadolinium-oxygen chains. The Gd-O chain consists of two types of clusters of Gd 3 O 20 and Gd 3 O 19 interconnection by Gd(4)O 8 polyhydron. Due to its high gadolinium concentration, a large -ΔS m of 56.6 J kg -1  K -1 for 1 was obtained at 2 K and ΔH=7 T, much larger than that of the commercial benchmark Gd 3 Ga 5 O 12 (GGG) crystal (38.4 J kg -1  K -1 ), suggesting it to be an excellent MCE material. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly-Bioreactive Silica-Based Mesoporous Bioactive Glasses Enriched with Gallium(III)

PubMed Central

Malavasi, Gianluca; Lusvardi, Gigliola; Menabue, Ledi

2018-01-01

Beneficial effects in bone cell growth and antibacterial action are currently attributed to Ga3+ ions. Thus, they can be used to upgrade mesoporous bioactive glasses (MBGs), investigated for tissue engineering, whenever they released therapeutic amounts of gallium ions to the surrounding medium. Three gallium-enriched MBGs with composition (in mol %) xSiO2–yCaO–zP2O5–5Ga2O3, being x = 70, y = 15, z = 10 for Ga_1; x = 80, y = 12, z = 3 for Ga_2; and x = 80, y = 15, z = 0 for Ga_3, were investigated and compared with the gallium-free 80SiO2–15CaO–5P2O5 MBG (B). 29Si and 31P MAS NMR analyses indicated that Ga3+ acts as network modifier in the glass regions with higher polymerization degree and as network former in the zones with high concentration of classical modifiers (Ca2+ ions). Ga_1 and Ga_2 exhibited a quick in vitro bioactive response because they were coated by an apatite-like layer after 1 and 3 days in simulated body fluid. Although we have not conducted biological tests in this paper (cells or bacteria), Ga_1 released high but non-cytotoxic amounts of Ga3+ ions in Todd Hewitt Broth culture medium that were 140 times higher than the IC90 of Pseudomonas aeruginosa bacteria, demonstrating its potential for tissue engineering applications. PMID:29498654

Determination of gallium at trace levels using a spectrofluorimetric method in synthetic U-Ga and Ga-As solutions.

PubMed

Kara, Derya; Fisher, Andrew; Foulkes, Mike; Hill, Steve J

2010-01-01

A simple, easy to use and selective spectrofluorimetric method for the determination of trace levels of gallium has been developed. A new Schiff base, N-o-vanillidine-2-amino-p-cresol (OVAC) was synthesized and its fluorescence activity with gallium investigated. Based on this chelation reaction, a spectrofluorimetric method has been developed for the determination of gallium in synthetically prepared Ga-U and Ga-As samples buffered at pH 4.0 using acetic acid-sodium acetate. The chelation reaction between Ga(III) and N-o-vanillidine-2-amino-p-cresol was very fast, requiring only 30min at room temperature to complex completely. The limit of detection (LOD) (3sigma) for Ga(III) was 7.17 nM (0.50 microgL(-1)), determined from the analysis of 11 different solutions of 20 microg L(-1) Ga(III). Copyright 2009 Elsevier B.V. All rights reserved.

One-step rapid synthesis of ultrafine γ-Ga2O3 nanocrystals by microwave hydrothermal method in ammonium hydroxide medium

NASA Astrophysics Data System (ADS)

Cui, Lu; Wang, Hong; Xin, Baifu; Mao, Guijie

2017-10-01

Ultrafine nanocrystals of γ-gallium oxide (γ-Ga2O3) were rapidly synthesized via microwave hydrothermal method at 140 °C, in which Ga(NO3)3 was used as the gallium source and urea was the precipitant. The samples were characterized by X-ray diffraction (XRD), ultraviolet-visible absorption spectroscopy (UV-Vis), transmission electron microscopy (TEM), nitrogen physisorption and photoluminescence spectroscopy (PL). The crystallite size of ultrafine spinel γ-Ga2O3 was in the range from 4 to 5 nm and the optical bandgap was 4.61 eV. To improve the crystallinity, the ultrafine γ-Ga2O3 nanocrystals were calcined at 300-700 °C further. The ultrafine γ-Ga2O3 calcined at 500 °C (calcined-γ-Ga2O3) still remained the metastable γ-phase with relatively high crystallinity and the crystallite size around 5-7 nm. Photocatalytic performances of the synthesized samples were also evaluated by the degradation of rhodamine B (RhB). Results revealed that the ultrafine γ-Ga2O3 and the calcined-γ-Ga2O3 samples exhibited high photocatalytic efficiencies of 68.2 and 90.7%, respectively.

Cooling field and temperature dependent exchange bias in Gd substituted YFe0.5Cr0.5O3

NASA Astrophysics Data System (ADS)

Singh, Karan; Mukherjee, K.

2018-04-01

We report the results of our investigation of cooling field and temperature dependence of exchange bias on Gd substituted mixed metal oxide YFe0.5Cr0.5O3. A negative exchange bias is observed in the Gd-substituted compounds, in contrast to the positive exchange bias in parent compound, YFe0.5Cr0.5O3 [1]. With the increase in Gd concentration it is noted that the exchange bias decreases. It was noted that the paramagnetic contribution from Gd ions plays the leading role in comparison to the antiferromagnetic type correlations among spins as is observed for the parent compound. Due to magnetic rare earth ion, additional exchange interaction of the form Gd-O-Fe/Cr dominates the magnetic interaction arising due to the transition metal ions, resulting in the reduction in exchange bias value.

Structural and Electrochemical Consequences of Al and Ga Cosubstitution in Li7La3Zr2O12 Solid Electrolytes.

PubMed

Rettenwander, Daniel; Redhammer, Günther; Preishuber-Pflügl, Florian; Cheng, Lei; Miara, Lincoln; Wagner, Reinhard; Welzl, Andreas; Suard, Emmanuelle; Doeff, Marca M; Wilkening, Martin; Fleig, Jürgen; Amthauer, Georg

2016-04-12

Several "Beyond Li-Ion Battery" concepts such as all solid-state batteries and hybrid liquid/solid systems envision the use of a solid electrolyte to protect Li-metal anodes. These configurations are very attractive due to the possibility of exceptionally high energy densities and high (dis)charge rates, but they are far from being realized practically due to a number of issues including high interfacial resistance and difficulties associated with fabrication. One of the most promising solid electrolyte systems for these applications is Al or Ga stabilized Li 7 La 3 Zr 2 O 12 (LLZO) based on high ionic conductivities and apparent stability against reduction by Li metal. Nevertheless, the fabrication of dense LLZO membranes with high ionic conductivity and low interfacial resistances remains challenging; it definitely requires a better understanding of the structural and electrochemical properties. In this study, the phase transition from garnet ( Ia 3̅ d , No. 230) to "non-garnet" ( I 4̅3 d , No. 220) space group as a function of composition and the different sintering behavior of Ga and Al stabilized LLZO are identified as important factors in determining the electrochemical properties. The phase transition was located at an Al:Ga substitution ratio of 0.05:0.15 and is accompanied by a significant lowering of the activation energy for Li-ion transport to 0.26 eV. The phase transition combined with microstructural changes concomitant with an increase of the Ga/Al ratio continuously improves the Li-ion conductivity from 2.6 × 10 -4 S cm -1 to 1.2 × 10 -3 S cm -1 , which is close to the calculated maximum for garnet-type materials. The increase in Ga content is also associated with better densification and smaller grains and is accompanied by a change in the area specific resistance (ASR) from 78 to 24 Ω cm 2 , the lowest reported value for LLZO so far. These results illustrate that understanding the structure-properties relationships in this class of materials

Enhancement of Magnetization in Y3Fe5O12 Epitaxial Thin Films

NASA Astrophysics Data System (ADS)

Brangham, Jack T.; Gallagher, James C.; Yang, Angela S.; White, Shane P.; Adur, Rohan; Ruane, Willam T.; Esser, Bryan D.; Page, Michael R.; Hammel, P. Chris; McComb, David W.; Yang, Fengyuan

The ability to generate pure spin currents has applications in telecommunications, radar, and spin-based logic. Y3Fe5O12 (YIG) is one of the best materials for dynamic generation of spin currents due to its low damping, narrow ferromagnetic resonance (FMR) linewidth, and insulating behavior. We grow stoichiometric, high quality, epitaxial YIG thin films with thicknesses ranging from 4 to 250 nm on Gd3Ga5O12 by off-axis magnetron sputtering and characterize the YIG films by various techniques. The temperature dependence of the saturation magnetization was independently measured by in-plane vibrating sample magnetometry, out-of-plane magnetic shape anisotropy, and angular-dependent FMR absorption from 10 K to the Curie temperature of 530 K. The room temperature saturation magnetization was also measured with frequency dependent FMR. All measurements show a magnetization enhancement of 15% or greater when compared to reported magnetization values of bulk YIG crystals. We speculate this is due to suppression of the long wavelength magnons due to the finite size of the films.

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Picosecond laser with active mode locking and calcium lithium niobium gallium disordered Nd3+-activated garnet

NASA Astrophysics Data System (ADS)

Basiev, Tasoltan T.; Grudinin, A. B.; Karasik, Aleksandr Ya; Senatorov, A. K.; Sobol, A. A.; Fedorov, V. V.; Shubochkin, R. L.

1994-01-01

A laser was constructed in which the active medium was a crystal of calcium lithium niobium gallium garnet activated with Nd3+ ions. An acoustooptic modulator made of an LiNbO3 crystal and a passive LiF switch with F2 colour centres were used in this laser. The combination of active mode locking and Q switching made it possible to generate laser pulses of 10-15 ps duration at the wavelength λ = 1061.2 nm with a peak power of about 15 MW.

Optical decoherence studies of Tm3 +:Y3Ga5O12

NASA Astrophysics Data System (ADS)

Thiel, C. W.; Sinclair, N.; Tittel, W.; Cone, R. L.

2014-12-01

Decoherence of the 795 nm 3H6 to 3H4 transition in 1 %Tm3 +:Y3Ga5O12 (Tm:YGG) is studied at temperatures as low as 1.2 K. The temperature, magnetic field, frequency, and time scale (spectral diffusion) dependence of the optical coherence lifetime is measured. Our results show that the coherence lifetime is impacted less by spectral diffusion than other known thulium-doped materials. Photon echo excitation and spectral hole burning methods reveal uniform decoherence properties and the possibility to produce full transparency for persistent spectral holes across the entire 56 GHz inhomogeneous bandwidth of the optical transition. Temperature-dependent decoherence is well described by elastic Raman scattering of phonons with an additional weaker component that may arise from a low density of glass-like dynamic disorder modes (two-level systems). Analysis of the observed behavior suggests that an optical coherence lifetime approaching 1 ms may be possible in this system at temperatures below 1 K for crystals grown with optimized properties. Overall, we find that Tm:YGG has superior decoherence properties compared to other Tm-doped crystals and is a promising candidate for applications that rely on long coherence lifetimes, such as optical quantum memories and photonic signal processing.

Bluish-White Luminescence in Rare-Earth-Free Vanadate Garnet Phosphors: Structural Characterization of LiCa3MV3O12 (M = Zn and Mg).

PubMed

Hasegawa, Takuya; Abe, Yusuke; Koizumi, Atsuya; Ueda, Tadaharu; Toda, Kenji; Sato, Mineo

2018-01-16

Extensive attention has been focused toward studies on inexpensive and rare-earth-free garnet-structure vanadate phosphors, which do not have a low optical absorption due to the luminescence color being easily controlled by its high composition flexibility. However, bluish emission phosphors with a high quantum efficiency have not been found until now. In this study, we successfully discovered bluish-white emitting, garnet structure-based LiCa 3 MV 3 O 12 (M = Zn and Mg) phosphors with a high quantum efficiency, and the detailed crystal structure was refined by the Rietveld analysis technique. These phosphors exhibit a broad-band emission spectra peak at 481 nm under near UV-light excitation at 341 nm, indicating no clear difference in the emission and excitation spectra. A very compact tetrahedral [VO 4 ] unit is observed in the LiCa 3 MV 3 O 12 (M = Zn and Mg) phosphors, which is not seen in other conventional garnet compounds, and generates a bluish-white emission. In addition, these phosphors exhibit high quantum efficiencies of 40.1% (M = Zn) and 44.0% (M = Mg), respectively. Therefore, these vanadate garnet phosphors can provide a new blue color source for LED devices.

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

DOE PAGES

Young, David L.; Lee, Benjamin G.; Fogel, Derek; ...

2017-09-26

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2O 3, the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2. These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2. This lack of Ga pileup may imply fewer dopant-related defectsmore » in the SiO 2, compared with B dopants, and account for the excellent passivation.« less

MgSiO3-FeSiO3-Al2O3 in the Earth's lower mantle: Perovskite and garnet at 1200 km depth

NASA Technical Reports Server (NTRS)

O'Neill, Bridget; Jeanloz, Raymond

1994-01-01

Natural pyroxene and garnet starting material are used to study the effects of joint Fe and Al substitution into MgSiO3 perovskite at approxmiately 50 GPa. Garnet is found to coexist with perovskite in samples containing both Fe and Al to pressures occurring deep into the lower mantel (approximately 1200 km depth). The volume of the perovskite unit cell is V(sub o(Angstrom(exp 3)) = 162.59 + 5.95x(sub FeSiO3) + 10.80x(sub Al2O3) with aluminum causing a significant increase in the distortion from the ideal cubic cell. On the basis of a proposed extension of the MgSiO3-Al2O3 high-pressure phase diagram toward FeSiO3, Fe is shown to partition preferentially into the garnet phase. The stability of garnet deep into the lower mantel may hinder the penetration of subducted slabs below the transition zone.

Energy Transfer Processes in (Lu,Gd)AlO3:Ce

DTIC Science & Technology

2001-01-01

studies on energy transfer processes in Ce-activated Lu, Y and Gd aluminum perovskite crystals that contribute to production of scintillation light in...LuAIO3, GdA10 3, cerium, scintillators, VUV spectroscopy, luminescence, time profiles, energy transfer 1. INTRODUCTION The yttrium aluminum perovskite...The Czochralski-grown monocrystals of LuAP:Ce were first evaluated in a garnet -free perovskite phase by Lempicki et al. in 1994 .4 More detailed

Continuous-wave and passively Q-switched laser performance of Nd:(LaxGd1-x)3Ga5O12 crystal at 1062 nm CW and PQS laser performance of Nd:LaGGG crystal at 1062 nm

NASA Astrophysics Data System (ADS)

Yang, H.; Fu, X.-W.; Jia, Z.-T.; He, J.-L.; Yang, X.-Q.; Zhang, B.-T.; Wang, R.-H.; Liu, X.-M.; Hou, J.; Lou, F.; Wang, Z.-W.; Yang, Y.

2012-10-01

The performance of diode-pumped continuous-wave (CW) and passively Q-switched (PQS) Nd:(LaxGd1-x)3Ga5O12 lasers at 1062 nm were demonstrated for the first time to our knowledge. The highest CW output power of 9.9 W was obtained, corresponding to an optical-to-optical efficiency of 42.9%. For the passive Q-switching operation, when the output coupler of Toc = 27% was adopted, the maximum output power of 3.97 W was obtained by a Cr4+:YAG saturable absorber with the initial transmission of T0 = 89.9%.While at T0 = 81.4% and Toc = 27%, the output power of 2.83 W, with pulse width of 7.4 ns and the repetition rate of 13.87 kHz, was obtained, corresponding to the maximum peak power of 27.6 kW and single pulse energy of 0.2 mJ, respectively.

Structure property relationships in gallium oxide thin films grown by pulsed laser deposition [Structure property relationships in Ga 2O 3 thin films grown by pulsed laser deposition

DOE PAGES

Garten, Lauren M.; Zakutayev, Andriy; Perkins, John D.; ...

2016-11-21

Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependencemore » to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.« less

Effects of Ga substitution in Ce:Tb3Ga x Al5- x O12 single crystals for scintillator applications

NASA Astrophysics Data System (ADS)

Nakauchi, Daisuke; Okada, Go; Kawano, Naoki; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-02-01

Bulk single crystals of Ce-doped Tb3Ga x Al5- x O12 (x = 0-4) were successfully synthesized by the floating zone method. The samples exhibit photoluminescence and scintillation with an intense broad emission due to the 5d-4f transitions of Ce3+ peaking around 550 nm as well as a few sharp peaks due to the 4f-4f transitions of Tb3+. Pulse height spectrum measurements under 137Cs γ-ray irradiation demonstrated a clear photoabsorption peak, in which the scintillation light yields were estimated to be 57,000 (x = 0), 28,000 (x = 1), 19,000 (x = 2), and 10,000 (x = 3) photons/MeV. Afterglow level can be suppressed with an appropriate addition of Ga, in which the optimum concertation is x = 2 leading an afterglow level of 23 ppm.

Free-Standing β-Ga2O3 Thin Diaphragms

NASA Astrophysics Data System (ADS)

Zheng, Xu-Qian; Lee, Jaesung; Rafique, Subrina; Han, Lu; Zorman, Christian A.; Zhao, Hongping; Feng, Philip X.-L.

2018-02-01

Free-standing, very thin, single-crystal β-gallium oxide (β-Ga2O3) diaphragms have been constructed and their dynamical mechanical properties characterized by noncontact, noninvasive optical measurements harnessing the multimode nanomechanical resonances of these suspended nanostructures. We synthesized single-crystal β-Ga2O3 using low-pressure chemical vapor deposition (LPCVD) on a 3C-SiC epilayer grown on Si substrate at temperature of 950°C for 1.5 h. The synthesized single-crystal nanoflakes had widths of ˜ 2 μm to 30 μm and thicknesses of ˜ 20 nm to 140 nm, from which we fabricated free-standing circular drumhead β-Ga2O3 diaphragms with thicknesses of ˜ 23 nm to 73 nm and diameters of ˜ 3.2 μm and ˜ 5.2 μm using a dry stamp-transfer technique. Based on measurements of multiple flexural-mode mechanical resonances using ultrasensitive laser interferometric detection and performing thermal annealing at 250°C for 1.5 h, we quantified the effects of annealing and adsorption of atmospheric gas molecules on the resonant characteristics of the diaphragms. Furthermore, we studied the effects of structural nonidealities on these free-standing β-Ga2O3 nanoscale diaphragms. We present extensive characterization of the mechanical and optical properties of free-standing β-Ga2O3 diaphragms, paving the way for realization of resonant transducers using such nanomechanical structures for use in applications including gas sensing and ultraviolet radiation detection.

Serum and tissue concentrations of gallium after oral administration of gallium nitrate and gallium maltolate to neonatal calves.

PubMed

Monk, Caroline S; Sweeney, Raymond W; Bernstein, Lawrence R; Fecteau, Marie-Eve

2016-02-01

To determine serum and tissue concentrations of gallium (Ga) after oral administration of gallium nitrate (GaN) and gallium maltolate (GaM) to neonatal calves. 8 healthy neonatal calves. Calves were assigned to 1 of 2 groups (4 calves/group). Gallium (50 mg/kg) was administered as GaN or GaM (equivalent to 13.15 mg of Ga/kg for GaN and 7.85 mg of Ga/kg for GaM) by oral gavage once daily for 5 days. Blood samples were collected 0, 0.25, 0.5, 1, 2, 4, 8, 12, and 24 hours after Ga administration on day 1; 4 and 24 hours after Ga administration on days 2, 3, and 4; and 4, 12, and 24 hours after Ga administration on day 5. On day 6, calves were euthanized and tissue samples were obtained. Serum and tissue Ga concentrations were measured by use of mass spectrometry. Data were adjusted for total Ga dose, and comparisons were made between the 2 groups. Calves receiving GaM had a significantly higher dose-adjusted area under the curve and dose-adjusted maximum serum Ga concentration than did calves receiving GaN. Despite receiving less Ga per dose, calves receiving GaM had tissue Ga concentrations similar to those for calves receiving GaN. In this study, calves receiving GaM had significantly higher Ga absorption than did calves receiving GaN. These findings suggested that GaM might be useful as a prophylactic agent against Mycobacterium avium subsp paratuberculosis infection in neonatal calves.

Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols.

PubMed

Basharat, Siama; Carmalt, Claire J; Binions, Russell; Palgrave, Robert; Parkin, Ivan P

2008-02-07

Thin films of Ga(2)O(3) have been produced from [Ga(NMe(2))(3)](2) and ROH (R = CH(2)CH(2)NMe(2), CH(CH(2)NMe(2))(2), CH(CH(3))CH(2)NMe(2), CH(2)CH(2)OMe and C(CH(3))(2)CH(2)OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 degrees C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.

Photoluminescence properties of Tb3Al5O12:Ce3+ garnet synthesized by the metal organic decomposition method

NASA Astrophysics Data System (ADS)

Onishi, Yuya; Nakamura, Toshihiro; Adachi, Sadao

2017-02-01

Tb3Al5O12:Ce3+ garnet (TAG:Ce3+) phosphor was synthesized by the metal organic decomposition (MOD) method and subsequent calcination at Tc = 800-1200°C for 1 h in air. The effects of Ce3+ concentration on the phosphor properties were investigated in detail using X-ray diffraction (XRD) analysis, photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and PL decay measurements. The maximum intensity in the Ce3+ yellow emission was observed at the Ce3+ concentration of ∼0.20%. PLE and PL decay measurements suggested an evidence of the energy transfer from Tb3+ to Ce3+. Calcination temperature dependence of the XRD and PL intensities yielded an energy of ∼1.5 eV both for the TAG formation in the MOD process and for the optical activation of Ce3+ in its lattice sites. Temperature dependences of the PL intensity for the TAG:Ce3+ yellow-emitting and K2SiF6:Mn4+ red-emitting phosphors were also examined for the future solid-state lighting applications at T = 20-500 K in 10-K steps. The data of TAG:Ce3+ were analyzed using a theoretical model with considering a reservoir level of Et ∼9 meV, yielding a quenching energy of Eq ∼0.35 eV, whereas the K2SiF6:Mn4+ red-emitting phosphor data yielded a value of Eq ∼1.0 eV. The schematic energy-level diagrams for Tb3+ and Ce3+ were proposed for the sake of a better understanding of these ions in the TAG host.

Experimental and theoretical study of pure and doped crystals: Gd2O2S, Gd2O2S:Eu3+ and Gd2O2S:Tb3+

NASA Astrophysics Data System (ADS)

Wang, Fei; Chen, Xiumin; Liu, Dachun; Yang, Bin; Dai, Yongnian

2012-08-01

Quantum chemistry and experimental method were used to study on pure and doped Gd2O2S crystals in this paper. The band structure and DOS diagrams of pure and doped Gd2O2S crystals which calculated by using DFT (Density Functional Theory) method were illustrated to explain the luminescent properties of impurities in crystals. The calculations of the crystal structure were finished by using the program of CASTEP (Cambridge Sequential Total Energy Package). The samples showed the characteristic emissions of Tb3+ ions with 5D4-7FJ transitions and Eu3+ ions with 5D0-7FJ transitions which emit pure green luminescence and red luminescence respectively. The experimental excitation spectra of Tb3+ and Eu3+ doped Gd2O2S are in agreement of the DOS diagrams over the explored energy range, which has allowed a better understanding of different luminescence mechanisms of Tb3+ and Eu3+ in Gd2O2S crystals.

Charge deformation and orbital hybridization: intrinsic mechanisms on tunable chromaticity of Y3Al5O12:Ce3+ luminescence by doping Gd3+ for warm white LEDs

PubMed Central

Chen, Lei; Chen, Xiuling; Liu, Fayong; Chen, Haohong; Wang, Hui; Zhao, Erlong; Jiang, Yang; Chan, Ting-Shan; Wang, Chia-Hsin; Zhang, Wenhua; Wang, Yu; Chen, Shifu

2015-01-01

The deficiency of Y3Al5O12:Ce (YAG:Ce) luminescence in red component can be compensated by doping Gd3+, thus lead to it being widely used for packaging warm white light-emitting diode devices. This article presents a systematic study on the photoluminescence properties, crystal structures and electronic band structures of (Y1−xGdx)3Al5O12: Ce3+ using powerful experimental techniques of thermally stimulated luminescence, X-ray diffraction, X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS) and ultraviolet photoelectron spectra (UPS) of the valence band, assisted with theoretical calculations on the band structure, density of states (DOS), and charge deformation density (CDD). A new interpretation from the viewpoint of compression deformation of electron cloud in a rigid structure by combining orbital hybridization with solid-state energy band theory together is put forward to illustrate the intrinsic mechanisms that cause the emission spectral shift, thermal quenching, and luminescence intensity decrease of YAG: Ce upon substitution of Y3+ by Gd3+, which are out of the explanation of the classic configuration coordinate model. The results indicate that in a rigid structure, the charge deformation provides an efficient way to tune chromaticity, but the band gaps and crystal defects must be controlled by comprehensively accounting for luminescence thermal stability and efficiency. PMID:26175141

[Synthesis and spectral characteristic of Ga-Fe3O4 at room temperature].

PubMed

Wang, Jing; Deng, Tong; Yang, Cai-Qin; Lin, Yu-Long; Wang, Wei; Wu, Hai-Yan

2008-03-01

Gallium bearing ferrites with different gallium content were synthesized by oxidation of ferrous and gallium ions under alkaline condition and room temperature. The samples were subjected to IR, XRD, Mossbauer spectral analysis and magnetization characterization. The results indicated that the green-rust intermediate phase would be produced during the procedure of Ga-Fe3O4 formation, and the green-rust intermediate phase was converted to ferrites with spinel structure during the drying under hot-N2 atmosphere. With the introduction of gallium into the spinel structure, the interplanar crystal spacing of the spinel structure decreased, as indicated from XRD spectra, and the lattice vibration of M(T)-O-M(o) moved to the high-frequency resulting from IR spectra. A small amount gallium introduction entered the tetrahedral sites preferentially rather than the octahedral sites, and increasing gallium introduction would enhance the occupation of octahedral sites. Furthermore, a small content of gallium in the initial solution could prevent the formation of non-magnetic Fe2O3.

Combustion synthesis and characterization of MV0.5P0.5O4: Sm3+, Tm3+ (M = Gd, La, Y)

NASA Astrophysics Data System (ADS)

Motloung, Selepe J.; Lephoto, Mantwa A.; Tshabalala, Kamohelo G.; Ntwaeaborwa, Odireleng M.

2018-04-01

In this paper, GdV0.5P0.5O4: Sm3+, Tm3+, LaV0.5P0.5O4: Sm3+, Tm3+ and YV0.5P0.5O4: Sm3+, Tm3+ phosphor powders were prepared by solution combustion method using urea as a fuel. The phase purity, surface morphology, optical and photoluminescence properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence spectroscopy. The XRD results indicated that the prepared powders are of a single phase and crystallized in tetragonal structure for Gd and Y systems while monoclinic phase was observed for La system. SEM showed that the samples consisted of mixed structures. The estimated band gaps were 2.2, 2.4 and 2.3 eV for Y, Gd and La systems respectively. The photoluminescence results showed four emission peaks. One peak is assigned to 1G4 - 3H6 transition of Tm3+, and three other emission peaks are attributed to 6G5/2 - 6H5/2, 6G5/2 - 6H7/2 and 6G5/2 - 6H9/2 transitions of Sm3+. The photoluminescent intensity was the highest in the gadolinium system.

Multiferroic properties of the Y2BiFe5O12 garnet

NASA Astrophysics Data System (ADS)

Durán, A.; Ostos, C.; Arnache, O.; Siqueiros, J. M.; García-Guaderrama, M.

2017-10-01

Multiferroic properties are found in the Yttrium iron garnet (YIG) modified with Bi3+. The X-ray diffraction pattern shows that the Bi3+ ion is completely soluble up to one-third of the Y molar content forming the Y2BiFe5O12 compound as a single phase. Structural analysis did not show signals of other incipient non-centrosymmetric phases in the compound. However, the dielectric and polarization studies clearly exhibit a typical relaxor ferroelectric behavior at room temperature where the maxima of the broad permittivity peaks shift with frequency. The quadratic diffuseness coefficient obtained from the modified Curie-Weiss law suggests polar nanoregion switching in a broad temperature range. Using the Vogel-Fulcher relationship, the activation energy and freezing temperature were found to be 243.1 meV and 322.6 K, respectively. Here, the main contribution to relaxation comes from thermally activated reorientation of the dipole moments, as confirmed by the well-defined hysteresis loops in the P-E measurements. The dipole fluctuations arise from the compositional disorder induced by Bi3+ ions randomly distributed in the lattice, having thermally active polarization fluctuations above the freezing temperature, Tf. Furthermore, it is found that Bi3+ preserves the magnetization features of this compound. Thus, the Bi3+ modified YIG compound is found to be a multiferroic material at room temperature.

Enhancement of the nonreciprocal magneto-optic effect of TM modes using iron garnet double layers with opposite Faraday rotation

NASA Astrophysics Data System (ADS)

Wallenhorst, M.; Niemöller, M.; Dötsch, H.; Hertel, P.; Gerhardt, R.; Gather, B.

1995-04-01

Garnet films of composition Lu3-xBixFe5-yGayO12 are grown by liquid-phase epitaxy on [111]-oriented substrates of gadolinium gallium garnet. Faraday rotation and saturation magnetization are measured as a function of substitution levels, which range up to x=1.4 and y=1.8, respectively. Nonreciprocal propagation of the TM0 is studied at a wavelength of 1.3 μm. It is shown that the difference between forward and backward propagation constants can be optimized using double layers with opposite sign of the Faraday rotation. Agreement between experiments and calculations is excellent.

Raman enhancement by graphene-Ga2O3 2D bilayer film

PubMed Central

2014-01-01

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications. PMID:24472433

Raman enhancement by graphene-Ga2O3 2D bilayer film.

PubMed

Zhu, Yun; Yu, Qing-Kai; Ding, Gu-Qiao; Xu, Xu-Guang; Wu, Tian-Ru; Gong, Qian; Yuan, Ning-Yi; Ding, Jian-Ning; Wang, Shu-Min; Xie, Xiao-Ming; Jiang, Mian-Heng

2014-01-28

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1982-04-20

goenv.o -,y la)ers were YIG (yttrium iron garnet ) films grown by liquid phase epitaxy w:* ( LPE ) on gadolinium gallium garnet (GGG) substrates. Magnetic...containing three epitaxial layers. In addition to the MSW work oil garnets , LPE of lithium ferrite and hexagonal fertites was studied. A substituted lead...of a stripline. The other layers are epitaxial films , generally YIG (yttrium iron garnet ) with magnetic properties adjusted by suitable modifications

Simulating equilibrium processes in the Ga(NO3)3-H2O-NaOH system

NASA Astrophysics Data System (ADS)

Fedorova, E. A.; Bakhteev, S. A.; Maskaeva, L. N.; Yusupov, R. A.; Markov, V. F.

2016-06-01

Equilibrium processes in the Ga(NO3)3-H2O-NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.

New possibilities for Cr/sup 3 +/ ions as activators of the active media of solid-state lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zharikov, E.V.; Lavrishchev, S.V.; Laptev, V.V.

An analysis is made of the relationship between the excited-state lifetime of chromium and the ratio of the luminescence intensities in the /sup 4/T/sub 2/--/sup 4/A/sub 2/ and /sup 2/E--/sup 4/A/sub 2/ channels, on one hand, and the Cr/sup 3 +/..-->..acceptor energy transfer efficiency, on the other. A method is proposed for determination of the energy gap ..delta..E between the /sup 2/E and /sup 4/T/sub 2/ levels of Cr/sup 3 +/ from the temperature dependence of the Cr/sup 3 +/..-->..acceptor nonradiative transfer efficiency. Two independent methods were used to determine ..delta..E for gadolinium gallium garnet (GGG) crystals doped with chromiummore » and with chromium and neodymium. The probabilities of Cr/sup 3 +/ intracenter relaxation and typical parameters of the Cr/sup 3 +/--Nd/sup 3 +/ energy transfer process were also determined. It was found that the values of ..delta..E in gadolinium scandium gallium (GdScGaG) and lanthanum lutetium gallium garnet crystals are comparable with the values of kT at liquid helium temperature. It is shown that the high efficiency of the Cr/sup 3 +/..-->..Nd/sup 3 +/ nonradiative transfer in GGG and GdScGaG crystals doped with chromium and neodymium at room temperature is due to the relatively low value of ..delta..E. It is noted that there are many crystals having the garnet structure and low values of ..delta..E that are potentially suitable for developing lasers utilizing the /sup 4/T/sub 2/--/sup 4/A/sub 2/ electronic--vibrational transition in Cr/sup 3 +/ and having an emission frequency continuously tunable over a wide spectral range.« less

Transparent ceramic garnet scintillator optimization via composition and co-doping for high-energy resolution gamma spectrometers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Beck, Patrick R.; Swanberg, Erik L.; Hunter, Steven L.

2016-09-01

Breakthrough energy resolution, R(662keV) <4%, has been achieved with an oxide scintillator, Cerium-doped Gadolinium Yttrium Gallium Aluminum Garnet, or GYGAG(Ce), by optimizing fabrication conditions. Here we describe the dependence of scintillation light yield and energy resolution on several variables: (1) Stoichiometry, in particular Gd/Y and Ga/Al ratios which modify the bandgap energy, (2) Processing methods, including vacuum vs. oxygen sintering, and (3) Trace co-dopants that influence the formation of Ce4+ and modify the intra-bandgap trap distribution. To learn about how chemical composition influences the scintillation properties of transparent ceramic garnet scintillators, we have measured: scintillation decay component amplitudes; intensity and duration of afterglow; thermoluminescence glow curve peak positions and amplitudes; integrated light yield; light yield non-proportionality, as measured in the Scintillator Light Yield Non-Proportionality Characterization Instrument (SLYNCI); and energy resolution for gamma spectroscopy. Optimized GYGAG(Ce) provides R(662 keV) =3.0%, for 0.05 cm3 size ceramics with Silicon photodiode readout, and R(662 keV) =4.6%, at 2 in3 size with PMT readout.

Large-scale synthesis and photoluminescence of single-crystalline β-Ga 2O 3 nanobelts

NASA Astrophysics Data System (ADS)

Geng, Baoyou; Zhang, Lide; Meng, Guowen; Xie, Ting; Peng, Xinsheng; Lin, Yu

2003-12-01

Gallium oxide ( β-Ga 2O 3) nanobelts were synthesized on a large scale by a simple thermal evaporation method from a mixture of gallium (Ga) and silicon oxide (SiO 2) nanopowder at 850°C in argon atmosphere, which is 200-300°C less than that of thermal evaporation methods reported formerly. The nanobelts had a uniform single-crystal monoclinic structure with width ranging from 50 to 300 nm, thickness about 10-20 nm and lengths up to several tens or hundreds of micrometers. The growth of β-Ga 2O 3 nanobelts is controlled by vapor-solid crystal growth mechanism. Photoluminescence measurement shows that the nanobelts have one broad, strong blue emission and a UV emission.

Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

PubMed

Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

2017-12-05

Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

Experimental evaluation of Gd3Al2Ga3O12:Ce (GAGG:Ce) single crystals coupled to a silicon photomultiplier (SiPM) under high gamma ray irradiation conditions

NASA Astrophysics Data System (ADS)

Metallinos, A.; Kefalidis, E.; Kandarakis, I.; David, S.

2017-11-01

Cerium (Ce) ion doped scintillators are of high interest in Medical Imaging systems and radiation monitoring devices, due to their very fast response and very good emission characteristics. In this study, a series of measurements regarding the energy resolution, photofraction, sensitivity, as well as the figure of merit, of Gd3Al2Ga3O12:Ce (GAGG:Ce) scintillator crystals, is presented. All GAGG:Ce crystals have a surface area of 3x3 mm2 with varying thicknesses, from 4 up to 20 mm (4, 5, 6, 8, 10, 15 and 20 mm). These crystals were exposed to γ radiation, using two different radioactive sources: 137Cs (0.662 MeV) and 60Co (1.173 MeV and 1.332 MeV). Each crystal was measured individually and was optically coupled to a KETEK PM3350 SiPM, an optical sensor with high gain, suitable to operate in room temperature. The digitization of the pulses was accomplished using CAEN DT5720 desktop digitizer and its corresponding digital pulse processing (DPP) firmware. Each measurement was performed in a light-tight box and had duration of 30 min. The best energy resolution value was measured for the GAGG:Ce crystal with dimensions 3x3x15mm3, equal to 3.9% at 1.332 MeV. Results were evaluated and compared to previous published data.

Phase relationships in the BaO-Ga2O3-Ta2O5 system and the structure of Ba6Ga21TaO40.

PubMed

Cao, Jiang; Yu, Xiaodi; Kuang, Xiaojun; Su, Qiang

2012-07-16

Phase relationships in the BaO-Ga(2)O(3)-Ta(2)O(5) ternary system at 1200 °C were determined. The A(6)B(10)O(30) tetragonal tungsten bronze (TTB) related solution in the BaO-Ta(2)O(5) subsystem dissolved up to ~11 mol % Ga(2)O(3), forming a ternary trapezoid-shaped TTB-related solid solution region defined by the BaTa(2)O(6), Ba(1.1)Ta(5)O(13.6), Ba(1.58)Ga(0.92)Ta(4.08)O(13.16), and Ba(6)GaTa(9)O(30) compositions in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Two ternary phases Ba(6)Ga(21)TaO(40) and eight-layer twinned hexagonal perovskite solid solution Ba(8)Ga(4-x)Ta(4+0.6x)O(24) were confirmed in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Ba(6)Ga(21)TaO(40) crystallized in a monoclinic cell of a = 15.9130(2) Å, b = 11.7309(1) Å, c = 5.13593(6) Å, β = 107.7893(9)°, and Z = 1 in space group C2/m. The structure of Ba(6)Ga(21)TaO(40) was solved by the charge flipping method, and it represents a three-dimensional (3D) mixed GaO(4) tetrahedral and GaO(6)/TaO(6) octahedral framework, forming mixed 1D 5/6-fold tunnels that accommodate the Ba cations along the c axis. The electrical property of Ba(6)Ga(21)TaO(40) was characterized by using ac impedance spectroscopy.

Theoretical branching ratios for the 5I7 to 5I7 levels of Ho(3+) in the garnets A3B2C3O12 (A = Y,La,Lu,Gd; B = Al,Lu,Sc,Ga; C = Al,Ga)

NASA Technical Reports Server (NTRS)

Filer, Elizabeth D.; Morrison, Clyde A.; Turner, Gregory A.; Barnes, Norman P.

1991-01-01

Results are reported from an experimental study investigating triply ionized holmium in 10 garnets using the point-change model to predict theoretical energy levels and temperature-dependent branching ratios for the 5I7 to 5I8 manifolds for temperatures between 50 and 400 K. Plots were made for the largest lines at 300 K. YScAG was plotted twice, once for each set of X-ray data available. Energy levels are predicted based on theoretical crystal-field parameters, and good agreement to experiment is found. It is suggested that the present set of theoretical crystal-field parameters provides good estimates of the energy levels for the other hosts on which there are no experimental optical data. X-ray and index-of-refraction data are used to evaluate the performance of 10 lasers via a quantum mechanical model to predict the position of the energy levels and the temperature-dependent branching rations of the 5I7 to 5I8 levels of holmium. The fractional population inversion required for threshold is also evaluated.

Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion.

PubMed

Zheng, Xu-Qian; Lee, Jaesung; Rafique, Subrina; Han, Lu; Zorman, Christian A; Zhao, Hongping; Feng, Philip X-L

2017-12-13

Beta gallium oxide (β-Ga 2 O 3 ) is an emerging ultrawide band gap (4.5 eV-4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga 2 O 3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga 2 O 3 nanomechanical resonators using β-Ga 2 O 3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-Ga 2 O 3 circular drumhead structures, we demonstrate multimode nanoresonators up to the sixth mode in high and very high frequency (HF/VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young's modulus of E Y = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ∼40% upshift in frequency and ∼90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-Ga 2 O 3 electronic, optoelectronic, and physical sensing devices.

Phase composition and magnetism of sol-gel synthesized Ga-Fe-O nanograins

NASA Astrophysics Data System (ADS)

Rećko, K.; Waliszewski, J.; Klekotka, U.; Soloviov, D.; Ostapczuk, G.; Satuła, D.; Biernacka, M.; Balasoiu, M.; Basa, A.; Kalska-Szostko, B.; Szymański, K.

2018-02-01

We have succeeded in synthesizing orthorhombic Ga(1-x)Fe(1+x)O3 (-0.05? x?0.5), hexagonal GayFe(2-y)O3 (0?y?1.8) and cubic Ga(1+z)Fe(2-z)O4 (-0.1?z?0.8) nanograins of gallium ferrites using conventional precursors and an organic environment of Pechini scenario under atmospheric-pressure conditions (SG method). Phase composition and homogeneity were analyzed using X-ray diffraction. Small angle neutron scattering disclosed ellipsoidal particle shapes of gallium iron oxides (GFO) crystallizing in orthorhombic (o-GFO) and hexagonal (h-GFO) symmetry and parallelepiped shapes of Ga(1+y)Fe(2-y)O4 (c-GFO) grains. Despite local agglomeration among the magnetic grains, the scanning electron microscopy and transmission electron microscopy images point to faced-elliptical shapes. The Mössbauer spectroscopy with magnetization measurements was carried out in the temperature range of 5-295 K. The analysis of gallium ferrites magnetism demonstrates that iron atoms locate with various probabilities in crystallographic positions and the spontaneous magnetization preserves up to room temperature (RT).

Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

NASA Astrophysics Data System (ADS)

Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

2013-03-01

By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

Scintillation properties of Ce-doped (Gd0.32Y0.68)3Al5O12 transparent ceramics

NASA Astrophysics Data System (ADS)

Hirano, Shotaro; Okada, Go; Kawaguchi, Noriaki; Yagi, Hideki; Yanagitani, Takagimi; Yanagida, Takayuki

2017-04-01

In this work, we have investigated optical and scintillation properties of 0.35-0.65% Ce:(Gd0.32Y0.68)3Al5O12 (Ce:GYAG) transparent ceramics prepared by the vacuum sintering method. Obtained samples showed high transmittance in the spectral region longer than 500 nm, and two strong absorption bands were clearly observed below 380 nm and between 400 and 500 nm due to the 4f-5d transitions of Ce3+. Under UV and X-rays, we have also observed emission due to the 5d-4f transitions of Ce3+ which appeared around 500-700 nm. The emission decay profile of PL consisted of a single exponential decay component with the decay time of 62.7-64.1 ns while the scintillation decay profile was approximated by a second-order exponential decay function with the decay times of 87.3-100 ns and 1.14-1.32 μs. In addition, it has been revealed that 0.65% Ce:GYAG transparent ceramic showed a notable light yield of 18,000 ph/MeV and low afterglow (13 ppm).

Highly-Bioreactive Silica-Based Mesoporous Bioactive Glasses Enriched with Gallium(III).

PubMed

Sanchez-Salcedo, Sandra; Malavasi, Gianluca; Salinas, Antonio J; Lusvardi, Gigliola; Rigamonti, Luca; Menabue, Ledi; Vallet-Regi, Maria

2018-03-02

Beneficial effects in bone cell growth and antibacterial action are currently attributed to Ga 3+ ions. Thus, they can be used to upgrade mesoporous bioactive glasses (MBGs), investigated for tissue engineering, whenever they released therapeutic amounts of gallium ions to the surrounding medium. Three gallium-enriched MBGs with composition (in mol %) x SiO₂- y CaO- z P₂O₅-5Ga₂O₃, being x = 70, y = 15, z = 10 for Ga_1 ; x = 80, y = 12, z = 3 for Ga_2 ; and x = 80, y = 15, z = 0 for Ga_3 , were investigated and compared with the gallium-free 80SiO₂-15CaO-5P₂O₅ MBG ( B ). 29 Si and 31 P MAS NMR analyses indicated that Ga 3+ acts as network modifier in the glass regions with higher polymerization degree and as network former in the zones with high concentration of classical modifiers (Ca 2+ ions). Ga_1 and Ga_2 exhibited a quick in vitro bioactive response because they were coated by an apatite-like layer after 1 and 3 days in simulated body fluid. Although we have not conducted biological tests in this paper (cells or bacteria), Ga_1 released high but non-cytotoxic amounts of Ga 3+ ions in Todd Hewitt Broth culture medium that were 140 times higher than the IC90 of Pseudomonas aeruginosa bacteria, demonstrating its potential for tissue engineering applications.

Growth and characterization of β-Ga2O3 crystals

NASA Astrophysics Data System (ADS)

Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

2017-01-01

Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

High temperature mass spectrometric studies on Usbnd Ga system: Thermodynamic properties over (U3Ga5 + UGa2) and (UGa2 + UGa3) phase regions

NASA Astrophysics Data System (ADS)

Manikandan, P.; Trinadh, V. V.; Bera, Suranjan; Narasimhan, T. S. Lakshmi; Joseph, M.

2016-07-01

Vaporisation studies over gallium rich biphasic regions (U3Ga5 + UGa2) and (UGa2 + UGa3) in the Usbnd Ga system were carried out by Knusen effusion mass spectrometry in the temperature ranges of 1208-1366 K and 1133-1338 K, respectively. Ga(g) was the species observed in the mass spectra of the equilibrium vapour over both phase regions. From temperature dependence measurements, pressure-temperature relations were deduced as: log (pGa/Pa) = (-18216 ± 239)/(T/K) + (12.88 ± 0.18) over (U3Ga5 + UGa2) and log (pGa/Pa) = (-16225 ± 124)/(T/K) + (11.78 ± 0.10) over (UGa2 + UGa3). From these data, Gibbs free energy changes for the reactions 3UGa2(s) = U3Ga5(s) + Ga(g) and UGa3(s) = UGa2(s) + Ga(g) were computed and subsequently Gibbs free energies of formation of U3Ga5(s) and UGa3(s) were deduced as ΔfGTo U3Ga5(s) (±5.5) = -352.4 + 0.133 T(K) (kJ mol-1) (1208-1366 K) and ΔfGTo UGa3(s) (±3.8) = -191.9 + 0.082 T(K) (kJ mol-1) (1133-1338 K). The Gibbs free energy of formation of U3Ga5(s) is being reported for the first time.

Optical signatures of deep level defects in Ga2O3

NASA Astrophysics Data System (ADS)

Gao, Hantian; Muralidharan, Shreyas; Pronin, Nicholas; Karim, Md Rezaul; White, Susan M.; Asel, Thaddeus; Foster, Geoffrey; Krishnamoorthy, Sriram; Rajan, Siddharth; Cao, Lei R.; Higashiwaki, Masataka; von Wenckstern, Holger; Grundmann, Marius; Zhao, Hongping; Look, David C.; Brillson, Leonard J.

2018-06-01

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.

Synthesis, crystal structure, and physical properties of the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forbes, Scott; Yuan, Fang; Kosuda, Kosuke

The second and third known rare-earth bismuthide oxides, Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, have been discovered via high temperature reactions at 1300 °C. Like its Gd–Sb–O counterparts, the Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} phases crystallize in the monoclinic C2/m space group, with the latter containing disordered Bi atoms along the b direction of the unit cell. Unlike the RE{sub 8}Sb{sub 3}O{sub 8} series, the formation of the Gd{sub 3}BiO{sub 3} phase does not necessarily precede the formation of Gd{sub 8}Bi{sub 3}O{sub 8}, which is likely due to the difficulty of accommodating bismuth in themore » RE–O framework due to its larger size. Physical property measurements performed on a pure Gd{sub 8}Bi{sub 3}O{sub 8} sample reveal semiconducting behavior. Although electronic structure calculations predict metallic behavior due to an unbalanced electron count, the semiconducting behavior originates from the Anderson localization of the Bi p states near the Fermi level as a result of atomic disorder. - Graphical abstract: Reaction of GdBi and Gd{sub 2}O{sub 3} at high temperatures yields Gd–Bi–O phases. - Highlights: • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8}, the second and third rare-earth bismuthide oxides, have been discovered. • Gd{sub 3}BiO{sub 3} and Gd{sub 8}Bi{sub 3}O{sub 8} are isostructural with RE{sub 3}SbO{sub 3} and RE{sub 8}Sb{sub 3}O{sub 8}. • Gd{sub 8}Bi{sub 3}O{sub 8} displays semiconducting behavior despite an unbalanced electron count. • Anderson localization of Bi p states results in semiconducting behavior in Gd{sub 8}Bi{sub 3}O{sub 8}.« less

Phase transition in lithium garnet oxide ionic conductors Li7La3Zr2O12: The role of Ta substitution and H2O/CO2 exposure

NASA Astrophysics Data System (ADS)

Wang, Yuxing; Lai, Wei

2015-02-01

High Li-content lithium garnet oxides are promising solid electrolyte materials for lithium batteries. Being the highest Li-content lithium garnet oxides, Li7La3Zr2O12 has been reported to crystallize in either the tetragonal or cubic phase with no consensus on the exact conditions under which these two phases are formed, which may be due to unintentional Al contamination and air exposure. In this work, the effects of Ta substitution and H2O/CO2 exposure have been studied under Al-contamination free conditions with minimal air exposure. We showed that 1) the Ta-substitution induced phase transition occurred through a two-phase mechanism and a minimum 0.6 mol of Ta substitution to Zr is needed to stabilize the cubic phase; 2) H2O and CO2 can individually induce the tetragonal-cubic phase transition in Li7La3Zr2O12 through proton exchange and Li extraction, respectively, which can have great influence on the transport properties of Li7La3Zr2O12.

Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swain, Basudev, E-mail: swain@iae.re.kr; Mishra, Chinmayee; Kang, Leeseung

Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium,more » two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na{sub 2}CO{sub 3}, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na{sub 2}CO{sub 3}, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved.« less

Synthesis and Luminescence Characteristics of Cr 3+ doped Y 3Al 5O 12 Phosphors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, Brenda A.; Dabestani, Reza T.; Lewis, Linda A.

2015-10-01

Luminescence performance of yttrium aluminum garnet (Y 3Al 5O 12) phosphors as a function of Cr 3+ concentration has been investigated via two different wet-chemical synthesis techniques, direct- (DP) and hydrothermal-precipitation (HP). Using either of these methods, the red-emitting phosphor [Y 3Al 5-xCr xO 12 (YAG: Cr 3+)] showed similar photoluminescence (PL) intensities once the dopant concentration was optimized. Specifically, the YAG: Cr 3+ PL emission intensity reached a maximum at Cr3+ concentrations of x = 0.02 (0.4 at.%) and x = 0.13 (2.6 at.%) for DP and HP processed samples, respectively. The results indicated the strong influence of themore » processing method on the optimized YAG: Cr 3+ performance, where a more effective energy transfer rate between a pair of Cr3+ activators at low concentration levels was observed by using the DP synthesis technique. Development of a highly efficient phosphor, using a facile synthesis approach, could significantly benefit consumer and industrial applications by improving the operational efficiency of a wide range of practical devices.« less

Capacitive Behavior of Single Gallium Oxide Nanobelt

PubMed Central

Cai, Haitao; Liu, Hang; Zhu, Huichao; Shao, Pai; Hou, Changmin

2015-01-01

In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure. PMID:28793506

Structural and Electrochemical Consequences of Al and Ga Cosubstitution in Li7La3Zr2O12 Solid Electrolytes

PubMed Central

2016-01-01

Several “Beyond Li-Ion Battery” concepts such as all solid-state batteries and hybrid liquid/solid systems envision the use of a solid electrolyte to protect Li-metal anodes. These configurations are very attractive due to the possibility of exceptionally high energy densities and high (dis)charge rates, but they are far from being realized practically due to a number of issues including high interfacial resistance and difficulties associated with fabrication. One of the most promising solid electrolyte systems for these applications is Al or Ga stabilized Li7La3Zr2O12 (LLZO) based on high ionic conductivities and apparent stability against reduction by Li metal. Nevertheless, the fabrication of dense LLZO membranes with high ionic conductivity and low interfacial resistances remains challenging; it definitely requires a better understanding of the structural and electrochemical properties. In this study, the phase transition from garnet (Ia3̅d, No. 230) to “non-garnet” (I4̅3d, No. 220) space group as a function of composition and the different sintering behavior of Ga and Al stabilized LLZO are identified as important factors in determining the electrochemical properties. The phase transition was located at an Al:Ga substitution ratio of 0.05:0.15 and is accompanied by a significant lowering of the activation energy for Li-ion transport to 0.26 eV. The phase transition combined with microstructural changes concomitant with an increase of the Ga/Al ratio continuously improves the Li-ion conductivity from 2.6 × 10–4 S cm–1 to 1.2 × 10–3 S cm–1, which is close to the calculated maximum for garnet-type materials. The increase in Ga content is also associated with better densification and smaller grains and is accompanied by a change in the area specific resistance (ASR) from 78 to 24 Ω cm2, the lowest reported value for LLZO so far. These results illustrate that understanding the structure–properties relationships in this class of materials

Carbon agent chemical vapor transport growth of Ga2O3 crystal

NASA Astrophysics Data System (ADS)

Jie, Su; Tong, Liu; Jingming, Liu; Jun, Yang; Guiying, Shen; Yongbiao, Bai; Zhiyuan, Dong; Youwen, Zhao

2016-10-01

Beta-type gallium oxide (β-Ga2O3) is a new attractive material for optoelectronic devices. Different methods had been tried to grow high quality β-Ga2O3 crystals. In this work, crystal growth of Ga2O3 has been carried out by chemical vapor transport (CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical predictions. Influence factors of Ga2O3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural (XRD) and optical (Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga2O3 crystal are presented. Project supported by the National Natural Science Foundation of China (Nos. 61474104, 61504131).

High Dielectrics on High Carrier Mobility InGaAs Compound Semiconductors and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2010-02-19

UHV- deposited Al2O3(3nm)/ Ga2O3 (Gd2O3)(8.5nm) on n- and p-In0.2Ga0.8As/GaAs. The results exhibit very high-quality interface and free-moving Fermi...κ Ga2O3 (Gd2O3) [GGO] and Gd2O3 on InGaAs, without an interfacial layer. InxGa1−xAs MOSFETs have been successfully demonstrated with excellent device... Ga2O3 (Gd2O3)/In0.2Ga0.8As and high temperature (850°C) stability Scaling high κ oxides to nanometer range as well as unpinning surface Fermi level

Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

PubMed Central

Kim, Tae-Hee; Choi, Sooseok; Park, Dong-Wha

2016-01-01

Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing. PMID:28344295

Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

DTIC Science & Technology

2015-09-01

ARL-TR-7473 ● SEP 2015 US Army Research Laboratory Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide...return it to the originator. ARL-TR-7473 ● SEP 2015 US Army Research Laboratory Bragg Reflector-Induced Increased Nonradiative ...3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum

Polyethylene glycol-covered ultra-small Gd2O3 nanoparticles for positive contrast at 1.5 T magnetic resonance clinical scanning

NASA Astrophysics Data System (ADS)

Fortin, Marc-André; Petoral, Rodrigo M., Jr.; Söderlind, Fredrik; Klasson, A.; Engström, Maria; Veres, Teodor; Käll, Per-Olof; Uvdal, Kajsa

2007-10-01

The size distribution and magnetic properties of ultra-small gadolinium oxide crystals (US-Gd2O3) were studied, and the impact of polyethylene glycol capping on the relaxivity constants (r1, r2) and signal intensity with this contrast agent was investigated. Size distribution and magnetic properties of US-Gd2O3 nanocrystals were measured with a TEM and PPMS magnetometer. For relaxation studies, diethylene glycol (DEG)-capped US-Gd2O3 nanocrystals were reacted with PEG-silane (MW 5000). Suspensions were adequately dialyzed in water to eliminate traces of Gd3+ and surfactants. The particle hydrodynamic radius was measured with dynamic light scattering (DLS) and the proton relaxation times were measured with a 1.5 T MRI scanner. Parallel studies were performed with DEG-Gd2O3 and PEG-silane-SPGO (Gd2O3,< 40 nm diameter). The small and narrow size distribution of US-Gd2O3 was confirmed with TEM (~3 nm) and DLS. PEG-silane-US-Gd2O3 relaxation parameters were twice as high as for Gd-DTPA and the r2/r1 ratio was 1.4. PEG-silane-SPGO gave low r1 relaxivities and high r2/r1 ratios, less compatible with positive contrast agent requirements. Higher r1 were obtained with PEG-silane in comparison to DEG-Gd2O3. Treatment of DEG-US-Gd2O3 with PEG-silane provides enhanced relaxivity while preventing aggregation of the oxide cores. This study confirms that PEG-covered Gd2O3 nanoparticles can be used for positively contrasted MR applications requiring stability, biocompatible coatings and nanocrystal functionalization.

Structure and Photoluminescence Properties of β-Ga2O3 Nanofibres Synthesized via Electrospinning Method

NASA Astrophysics Data System (ADS)

Sun, Chao; Deng, Jinxiang; Kong, Le; Chen, Liang; Shen, Zhen; Cao, Yisen; Zhang, Hao; Wang, Xiaoran

2017-12-01

This paper reported the β-Ga2O3 nanofibres which fabricated by electrospinning, and then calcining in oxygen at 750, 850, 950 and 1050°C. The structure and properties of β-Ga2O3 nanofibers have been studied though kinds of methods such as XRD, Photoluminescence (PL) spectrum, Raman spectrum, Scanning electron microscope (SEM) and FT-IR. The diameters of these nanofibres are from 60 to 130nm and the lengths of these nanofibres are about couple millimetres. The spectrum of PL which excitation at 365nm gave us the information that the emission peak of these β-Ga2O3 nanofibres is about 470nm, it may be coursed by the various defects including the vacancies of gallium and oxygen and the gallium-oxygen vacancy pairs as well, and observed that with the increasing of the annealing temperature, the emission peaks have a small bule swifting, and the crystallinity become better at the same time.

Synthesis and cathodoluminescence of beta-Ga2O3 nanowires with holes.

PubMed

Zhang, Xitian; Liu, Zhuang; Hark, Suikong

2008-03-01

Gallium oxide nanowires were synthesized on Si (001) substrate by chemical vapor deposition, using a Ga/Ga2O3 mixture as a precursor and Au as a catalyst. The structure of the as-synthesized products was examined by X-ray powder diffraction and high-resolution transmission electron microscopy, and found to be monoclinic beta-Ga2O3. The morphologies of the beta-Ga2O3 nanowires were characterized by scanning electron microscopy. The majority of the nanowires contain holes along their length, but a few were also found without holes. The holes are believed to be formed by the reaction of adsorbed Ga droplets on reactive terminating surfaces of the nanowires. For nanowires where these reactive surfaces are not exposed, the reaction of Ga is retarded. Cathodoluminescence (CL) of the nanowires was measured. Three emission bands centered at 376, 454, and 666 nm, respectively, were observed.

[Optical and spectral parameters in Ce3+ -doped gadolinium gallium aluminum garnet glass-ceramics].

PubMed

Gong, Hua; Zhao, Xin; Yu, Xiao-bo; Setsuhisa, Tanabe; Lin, Hai

2010-01-01

The crystalline phases of Ce3+ -doped gadolinium gallium aluminum garnet (GGAG) glass-ceramics were investigated by X-ray diffraction, and the fluorescence spectra were recorded under the pumping of blue light-emitting diode (LED) using an integrating sphere of 10-inch in diameter, which connected to a CCD detector. The spectral power distribution of the glass-ceramics was obtained from the measured spectra first, and then the quantum yield was derived based on the photon distribution. The quantum yield of Ce3+ emission in GGAG glass-ceramics is 29.2%, meanwhile, the color coordinates and the correlated color temperature (CCT) of combined white light were proved to be x = 0.319, y = 0.349 and 6086 K, respectively. Although the quantum yield is a little smaller than the value in Ce3+ -doped YAG glass-ceramics, the CCT of the combined white light is much smaller than that in the latter. The optical behavior of GGAG glass-ceramics provides new vision for developing comfortable LED lighting devices.

Menzerite-(Y) a New Species {(Y REE)(Ca Fe2plus)2}[(Mg Fe2plus)(Fe3plus Al)](Si3)O12 from a Felsic Granulite Parry Sound Ontario and a New Garnet End-member (Y2Ca)Mg2(SiO4)3

DOE Office of Scientific and Technical Information (OSTI.GOV)

E Grew; J Marsh; M Yates

2011-12-31

Menzerite-(Y), a new mineral species, forms reddish brown cores, n = 1.844 (20), up to 70 {micro}m across, rimmed successively by euhedral almandine containing up to 2.7 wt% Y{sub 2}O{sub 3} and by K-feldspar in a felsic granulite on Bonnet Island in the interior Parry Sound domain, Grenville Orogenic Province, Canada. It is named after Georg Menzer (1897-1989), the German crystallographer who solved the crystal structure of garnet. Single-crystal X-ray-diffraction results yielded space group Ia3d, a = 11.9947(6) {angstrom}. An electron-microprobe analysis of the grain richest in Y (16.93 wt% Y{sub 2}O{sub 3}) gave the following formula, normalized to eightmore » cations and 12 oxygen atoms: {l_brace}Y{sub 0.83}Gd{sub 0.01}Dy{sub 0.05}Ho{sub 0.02}Er{sub 0.07}Tm{sub 0.01}Yb{sub 0.06}Lu{sub 0.02}Ca{sub 1.37}Fe{sub 0.49}{sup 2+}Mn{sub 0.07}{r_brace} [Mg{sub 0.55}Fe{sub 0.42}{sup 2+}Fe{sub 0.58}{sup 3+}Al{sub 0.35} V{sub 0.01}Sc{sub 0.01}Ti{sub 0.08}](Si{sub 2.82}Al{sub 0.18})O{sub 12}, or {l_brace}(Y,REE)(Ca,Fe{sup 2+}){sub 2}{r_brace}[(Mg,Fe{sup 2+})(Fe{sup 3+},Al)](Si{sub 3})O{sub 12}. Synchrotron micro-XANES data gave Fe{sup 3+}/{Sigma}Fe = 0.56(10) versus 0.39(2) calculated from stoichiometry. The scattering power refined at the octahedral Y site, 17.68 epfu, indicates that a relatively light element contributes to its occupancy. Magnesium, as determined by electron-microprobe analyses, would be a proper candidate. In addition, considering the complex occupancy of this site, the average Y-O bond length of 2.0244(16) {angstrom} is in accord with a partial occupancy by Mg. The dominance of divalent cations with Mg > Fe{sup 2+} and the absence of Si at the octahedral Y site (in square brackets) are the primary criteria for distinguishing menzerite-(Y) from other silicate garnet species; the menzerite-(Y) end-member is {l_brace}Y{sub 2}Ca{r_brace}[Mg{sub 2}](Si{sub 3})O{sub 12}. The contacts of menzerite-(Y) with almandine are generally sharp and, in places, cuspate

Synthesis of Gd2O3:Eu nanoplatelets for MRI and fluorescence imaging

NASA Astrophysics Data System (ADS)

Maalej, Nabil M.; Qurashi, Ahsanulhaq; Assadi, Achraf Amir; Maalej, Ramzi; Shaikh, Mohammed Nasiruzzaman; Ilyas, Muhammad; Gondal, Mohammad A.

2015-05-01

We synthesized Gd2O3 and Gd2O3 doped by europium (Eu) (2% to 10%) nanoplatelets using the polyol chemical method. The synthesized nanoplatelets were characterized by X-ray diffraction (XRD), FESEM, TEM, and EDX techniques. The optical properties of the synthesized nanoplatelets were investigated by photoluminescence spectroscopy. We also studied the magnetic resonance imaging (MRI) contrast enhancement of T1 relaxivity using 3 T MRI. The XRD for Gd2O3 revealed a cubic crystalline structure. The XRD of Gd2O3:Eu3+ nanoplatelets were highly consistent with Gd2O3 indicating the total incorporation of the Eu3+ ions in the Gd2O3 matrix. The Eu doping of Gd2O3 produced red luminescence around 612 nm corresponding to the radiative transitions from the Eu-excited state 5D0 to the 7F2. The photoluminescence was maximal at 5% Eu doping concentration. The stimulated CIE chromaticity coordinates were also calculated. Judd-Ofelt analysis was used to obtain the radiative properties of the sample from the emission spectra. The MRI contrast enhancement due to Gd2O3 was compared to DOTAREM commercial contrast agent at similar concentration of gadolinium oxide and provided similar contrast enhancement. The incorporation of Eu, however, decreased the MRI contrast due to replacement of gadolinium by Eu.