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Sample records for gallium zinc oxide

  1. Pure spin current transport in gallium doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Althammer, Matthias; Mukherjee, Joynarayan; Geprägs, Stephan; Goennenwein, Sebastian T. B.; Opel, Matthias; Ramachandra Rao, M. S.; Gross, Rudolf

    2017-01-01

    We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a 12 nm thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to the predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures.

  2. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  3. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  4. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  5. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  6. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  7. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  8. Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kwon, Sung-Nam; Na, Seok-In; Kim, Sun-Kyung; Yoo, Young-Zo; Im, Hyeong-Seop; Seong, Tae-Yeon

    2017-04-01

    Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm-3 and 7.96 × 1021 cm-3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

  9. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  10. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  11. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  12. High performance Schottky diodes based on indium-gallium-zinc-oxide

    SciTech Connect

    Zhang, Jiawei; Song, Aimin; Xin, Qian

    2016-07-15

    Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

  13. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  14. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  15. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  16. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  17. Surface Composition, Work Function, and Electrochemical Characteristics of Gallium-Doped Zinc Oxide

    SciTech Connect

    Ratcliff, E. L.; Sigdel, A. K.; Macech, M. R.; Nebesny, K.; Lee, P. A.; Ginley, D. S.; Armstrong, N. R.; Berry, J. J.

    2012-06-30

    Gallium-doped zinc oxide (GZO) possesses the electric conductivity, thermal stability, and earth abundance to be a promising transparent conductive oxide replacement for indium tin oxide electrodes in a number of molecular electronic devices, including organic solar cells and organic light emitting diodes. The surface chemistry of GZO is complex and dominated by the hydrolysis chemistry of ZnO, which influences the work function via charge transfer and band bending caused by adsorbates. A comprehensive characterization of the surface chemical composition and electrochemical properties of GZO electrodes is presented, using both solution and surface adsorbed redox probe molecules. The GZO surface is characterized using monochromatic X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy after the following pretreatments: (i) hydriodic acid etch, (ii) potassium hydroxide etch, (iii) RF oxygen plasma etching, and (iv) high-vacuum argon-ion sputtering. The O 1s spectra for the GZO electrodes have contributions from the stoichiometric oxide lattice, defects within the lattice, hydroxylated species, and carbonaceous impurities, with relative near-surface compositions varying with pretreatment. Solution etching procedures result in an increase of the work function and ionization potential of the GZO electrode, but yield different near surface Zn:Ga atomic ratios, which significantly influence charge transfer rates for a chemisorbed probe molecule. The near surface chemical composition is shown to be the dominant factor in controlling surface work function and significantly influences the rate of electron transfer to both solution and tethered probe molecules.

  18. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  19. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  20. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  1. Electroless-plated Ni pattern with catalyst printing on indium-gallium-zinc oxide surface

    NASA Astrophysics Data System (ADS)

    Onoue, Miki; Ogura, Shintaro; Kusaka, Yasuyuki; Fukuda, Nobuko; Yamamoto, Noritaka; Kojima, Keisuke; Chikama, Katsumi; Ushijima, Hirobumi

    2017-05-01

    Electroless plated metals have been used for wiring and electrodes in the manufacture of electronic devices. To obtain plated patterns, etching and photoresist are generally used. However, through catalyst patterning by printing, we can obtain metal patterns without etching and photoresists by electroless plating. Solution-processed indium-gallium-zinc oxide (IGZO) has received significant attention for showing high performance and ease of preparation in air atmosphere. In this study, we prepared an electroless plated pattern by catalyst printing as electrodes of IGZO TFT. There are few reports on the application of plated metal electrodes prepared by catalyst printing to the source and drain electrodes of IGZO TFT. The prepared IGZO TFT exhibits a typical current-voltage (I-V) curve. The plated electrodes caused many problems such as performance degradation. However, our result showed that the plated metal electrodes can drive IGZO TFT. In addition, we confirm plated metal growth into the catalyst layer by cross sectional scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM/EDS) of the plated Ni. We discuss the relevance of the measured work function (WF) of the electrode materials and the performance of IGZO TFT.

  2. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  3. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    PubMed

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-03

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  4. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    NASA Astrophysics Data System (ADS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm2 at a bias voltage of -2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 1012 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiOx as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  5. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  6. Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

    PubMed

    Agrawal, Ravi; Espinosa, Horacio D

    2011-02-09

    Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

  7. Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.

    PubMed

    Lee, Changhun; Ko, Yoonduk; Kim, Youngsung

    2013-12-01

    Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays.

  8. Gallium-doped zinc oxide plasmonic nanostructures for mid-IR applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dev, Sukrith U.; Look, David C.; Leedy, Kevin D.; Yu, Lan; Walker, Dennis E.; Wenner, Brett R.; Allen, Jeffery W.; Allen, Monica S.; Wasserman, Daniel M.

    2016-09-01

    The mid-infrared (mid-IR) region of the electromagnetic spectrum has a range of applications in defense, sensing, and free space optical communications. However, most mid-IR sources, particularly incoherent emitters, are practically limited as a result of significant non-radiative losses such as Auger and Shockley-Read-Hall recombination as well as phonon-assisted scattering. Recently, plasmonic materials have been a topic of interest due to their ability to overcome traditional limitations of light confinement as well as enhance light-matter interactions. For inherently inefficient sources, such as many mid-IR emitters, coupling of the emitting element to a plasmonic structure could enhance emission efficiency. In this work, we propose and experimentally evaluate the use of plasmon-mediated photoluminescence as a potential method for improving efficiency in mid-IR emitters. We assess the effectiveness of 3% gallium-doped zinc oxide (G3ZO) as a mid-IR plasmonic material. We design, simulate, fabricate, and characterize a two-dimensional periodic array of bow-tie nanoantennas (nantennas). Our structures are designed to enhance the overlap of the nantenna optical field with underlying In(Ga)Sb/InAs quantum well structures emitting at λ ≈ 4.0μm. Thin films of G3ZO are grown by pulsed laser deposition and are characterized electrically and optically, with the extracted material parameters used as inputs in our simulations. G3ZO plasmonic nantennas are then fabricated by electron-beam lithography and dry-etching. The spectral response of the patterned nantennas is characterized using Fourier transform infrared reflection spectroscopy. Samples are then characterized by temperature and polarization dependent photoluminescence spectroscopy in order to determine the extent to which the emission efficiency improves as a result of coupling to the nanostructures.

  9. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  10. Blade-coated sol-gel indium-gallium-zinc-oxide for inverted polymer solar cell

    NASA Astrophysics Data System (ADS)

    Lee, Yan-Huei; Tsai, Pei-Ting; Chang, Chia-Ju; Meng, Hsin-Fei; Horng, Sheng-Fu; Zan, Hsiao-Wen; Lin, Hung-Cheng; Liu, Hung-Chuan; Tseng, Mei-Rurng; Yeh, Han-Cheng

    2016-11-01

    The inverted organic solar cell was fabricated by using sol-gel indium-gallium-zinc-oxide (IGZO) as the electron-transport layer. The IGZO precursor solution was deposited by blade coating with simultaneous substrate heating at 120 °C from the bottom and hot wind from above. Uniform IGZO film of around 30 nm was formed after annealing at 400 °C. Using the blend of low band-gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-C-T) and [6,6]-Phenyl C71 butyric acid methyl ester ([70]PCBM) as the active layer for the inverted organic solar cell, an efficiency of 6.2% was achieved with a blade speed of 180 mm/s for the IGZO. The efficiency of the inverted organic solar cells was found to depend on the coating speed of the IGZO films, which was attributed to the change in the concentration of surface OH groups. Compared to organic solar cells of conventional structure using PBDTTT-C-T: [70]PCBM as active layer, the inverted organic solar cells showed significant improvement in thermal stability. In addition, the chemical composition, as well as the work function of the IGZO film at the surface and inside can be tuned by the blade speed, which may find applications in other areas like thin-film transistors.

  11. High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides.

    PubMed

    Howard, Dougal P; Marchand, Peter; McCafferty, Liam; Carmalt, Claire J; Parkin, Ivan P; Darr, Jawwad A

    2017-04-10

    High-throughput continuous hydrothermal flow synthesis was used to generate a library of aluminum and gallium-codoped zinc oxide nanoparticles of specific atomic ratios. Resistivities of the materials were determined by Hall Effect measurements on heat-treated pressed discs and the results collated into a conductivity-composition map. Optimal resistivities of ∼9 × 10(-3) Ω cm were reproducibly achieved for several samples, for example, codoped ZnO with 2 at% Ga and 1 at% Al. The optimum sample on balance of performance and cost was deemed to be ZnO codoped with 3 at% Al and 1 at% Ga.

  12. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

    PubMed

    Secor, Ethan B; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C

    2016-07-13

    Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

  13. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  14. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  15. A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

    2016-12-01

    An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

  16. Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications

    NASA Astrophysics Data System (ADS)

    Kim, Donghyun; Ha, Jaeheung; Lee, Changhee; Hong, Yongtaek

    2012-09-01

    We have made a sol-gel deposited gallium-doped zinc oxide (GZO) film as a transparent conductive anode in polymer light-emitting diode (PLED) applications. The GZO films were obtained by spin-coating GZO precursor solutions followed by consecutive thermal annealing in the air and in the hydrogen-rich atmosphere. The resistance of GZO film was reduced to ~100 Ω/□ after thermal annealing in the hydrogen environment. Its surface roughness was sufficiently low (1.159 nm RMS) for depositing other polymer layers. We have fabricated PLEDs with quartz substrate / solution-processed GZO electrode (anode) / PEDOT:PSS (HITL) / SPG-01T (Green polymer light-emitting material purchased from Merck, EML) / Ca (EIL) / Al (Cathode). The fabricated devices showed current efficiency of 3.06 cd/A and power efficiency of 1.25 lm/W at luminance of 1000 cd/m2.

  17. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.

    2017-09-01

    A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.

  18. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    SciTech Connect

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-15

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  19. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  20. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  1. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  2. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  3. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

  4. Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

    NASA Astrophysics Data System (ADS)

    Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

    2013-04-01

    It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

  5. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

    PubMed

    Everaerts, Ken; Zeng, Li; Hennek, Jonathan W; Camacho, Diana I; Jariwala, Deep; Bedzyk, Michael J; Hersam, Mark C; Marks, Tobin J

    2013-11-27

    Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

  6. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  7. Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Seungwoon; Jeong, Jaewook

    2017-08-01

    In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

  8. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  9. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  10. Observation of decreasing resistivity of amorphous indium gallium zinc oxide thin films with an increasing oxygen partial pressure

    NASA Astrophysics Data System (ADS)

    Singh, Anup K.; Adhikari, Sonachand; Gupta, Rajeev; Deepak

    2017-01-01

    We have investigated the electrical resistivity behavior in amorphous indium gallium zinc oxide (a-IGZO) thin films. It is well known that resistivity increases as the film is deposited at a higher and higher oxygen partial pressure; we also record the same. However, in process we have discovered a remarkable region, in the oxygen deficient condition, that the resistivity shows an inverse behavior. This leads to the possibility that resistive films, suitable for thin film transistors, can also be obtained in oxygen deficient deposition conditions. Optical spectroscopic investigation could discern between a-IGZO films grown in oxygen deficient and oxygen rich conditions. The related resistivity behavior could be correlated to the presence of sub-bandgap states in films deposited in oxygen deficiency. These subgap states appear to be due to defects arising from local variations around the cations or oxygen atoms. The likely cause is an increase in Ga relative to In around O atom and the nature of cation-cation interaction when an oxygen atom is missing.

  11. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Bradley, Tanina; Iyer, Shanthi; Alston, Robert; Collis, Ward; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2013-03-01

    In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO2/Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (ID) of 10-6 A and on/off current ratio (Ion/off ) of 106 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔVT as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

  12. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    NASA Astrophysics Data System (ADS)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  13. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  14. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  15. Zinc diffusion in tellurium doped gallium antimonide

    NASA Astrophysics Data System (ADS)

    Conibeer, G. J.; Willoughby, A. F. W.; Hardingham, C. M.; Sharma, V. K. M.

    1996-07-01

    Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature, and antimony over-pressure. Total zinc profiles as well as carrier concentration profiles have been measured. Results favor a substitutional-interstitial vacancy (Frank-Turnbull)1 or kick-out (Gösele-Morehead)2 mechanism, although there is insufficient evidence to conclusively distinguish between them. There is also an inverse dependence of the diffusivity on antimony over-pressure, this is discussed in terms of zinc diffusion superimposed on gallium vacancy diffusion. Tellurium doping seems to have little effect on the diffusion because of its low level in comparison to that of zinc. Furthermore, at high zinc concentrations, the profiles indicate an additional component associated with a non-electrically active zinc species which has a small, strongly temperature dependent diffusion coefficient.

  16. Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

    NASA Astrophysics Data System (ADS)

    Lorenz, M.; Lajn, A.; Frenzel, H.; v. Wenckstern, H.; Grundmann, M.; Barquinha, P.; Martins, R.; Fortunato, E.

    2010-12-01

    We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 °C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm2/V s.

  17. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    PubMed

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  18. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    PubMed Central

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  19. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride.

    PubMed

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  20. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  1. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  2. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  3. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  4. Zinc diffusion in tellurium doped gallium antimonide

    NASA Astrophysics Data System (ADS)

    Conibeer, G. J.; Willoughby, A. F. W.; Hardingham, C. M.; Sharma, V. K. M.

    1996-07-01

    Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature and antimony over-pressure. Total zinc profiles as well as carrier concentration profiles have been measured. Results indicate an inverse dependence of the diffusivity on antimony over-pressure and favour an interstitial-substitutional vacancy [F.C. Frank and D. Turnbull, Phys. Rev. 104 (1956) 617] or kick-out [U. Gösele and F. Morehead, J. Appl. Phys. 52 (1981) 4617] mechanism. Furthermore, at high zinc concentrations, the profiles indicate an additional component associated with a non-electrically active zinc species which has a small, strongly temperature dependent diffusion coefficient.

  5. Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

    NASA Astrophysics Data System (ADS)

    Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

    2014-11-01

    We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

  6. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jin-Seong; Kim, Tae-Woong; Stryakhilev, Denis; Lee, Jae-Sup; An, Sung-Guk; Pyo, Yong-Shin; Lee, Dong-Bum; Mo, Yeon Gon; Jin, Dong-Un; Chung, Ho Kyoon

    2009-07-01

    We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R =3 mm under tension and compression without any performance degradation.

  7. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  8. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    NASA Astrophysics Data System (ADS)

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-01

    In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm2/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  9. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    SciTech Connect

    Niang, K. M.; Flewitt, A. J.; Barquinha, P. M. C.; Martins, R. F. P.

    2016-02-29

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  10. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  11. An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Li, Jiapeng; Lu, Lei; Feng, Zhuoqun; Kwok, Hoi Sing; Wong, Man

    2017-04-01

    The dependence of device reliability against a variety of stress conditions on the annealing atmosphere was studied using a single metal-oxide thin-film transistor with thermally induced source/drain regions. A cyclical switch between an oxidizing and a non-oxidizing atmosphere induced a regular change in the stress-induced shift of the turn-on voltage, with the magnitude of the shift being consistently smaller after annealing in an oxidizing atmosphere. The observed behavior is discussed in terms of the dependence of the population of oxygen vacancies on the annealing atmosphere, and it is recommended the last of the sequence of thermal processes applied to a metal-oxide thin-film transistor be executed in an oxidizing atmosphere.

  12. Non-volatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel

    NASA Astrophysics Data System (ADS)

    Hu, Quanli; Lee, Seung Chang; Baek, Yoon-Jae; Lee, Hyun Ho; Kang, Chi Jung; Kim, Hyun-Mi; Kim, Ki-Bum; Yoon, Tae-Sik

    2013-02-01

    Non-volatile nano-floating gate memory characteristics with colloidal Pt-Fe2O3 composite nanoparticles with a mostly core-shell structure and indium gallium zinc oxide channel layer were investigated. The Pt-Fe2O3 nanoparticles were chemically synthesized through the preferential oxidation of Fe and subsequent pileup of Pt into the core in the colloidal solution. The uniformly assembled nanoparticles' layer could be formed with a density of 3 × 1011 cm-2 by a solution-based dip-coating process. The Pt core ( 3 nm in diameter) and Fe2O3-shell ( 6 nm in thickness) played the roles of the charge storage node and tunneling barrier, respectively. The device exhibited the hysteresis in current-voltage measurement with a threshold voltage shift of 4.76 V by gate voltage sweeping to +30 V. It also showed the threshold shift of 0.66 V after pulse programming at +20 V for 1 s with retention > 65 % after 104 s. These results demonstrate the feasibility of using colloidal nanoparticles with core-shell structure as gate stacks of the charge storage node and tunneling dielectric for low-temperature and solution-based processed non-volatile memory devices.

  13. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    SciTech Connect

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  14. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    NASA Astrophysics Data System (ADS)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  15. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  16. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo; Ohashi, Naoki

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  17. Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

    SciTech Connect

    Coleman, J.P.; Monzyk, B.F.

    1988-07-26

    The method of dissociating gallium arsenide into a gallium-containing component and an arsenic-containing component, is described which comprises contacting the gallium arsenide with an oxidizing agent and a liquid comprising hydroxamic acid to convert the gallium to a gallium-hydroxamic acid complex and to oxidize the arsenic to a positive valence state.

  18. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    NASA Astrophysics Data System (ADS)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  19. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  20. Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process

    NASA Astrophysics Data System (ADS)

    Asami, Yoshinobu; Kurata, Motomu; Okazaki, Yutaka; Higa, Eiji; Matsubayashi, Daisuke; Okamoto, Satoru; Sasagawa, Shinya; Moriwaka, Tomoaki; Kakehata, Tetsuya; Yakubo, Yuto; Kato, Kiyoshi; Hamada, Takashi; Sakakura, Masayuki; Hayakawa, Masahiko; Yamazaki, Shunpei

    2016-04-01

    To achieve both low power consumption and high-speed operation, we fabricated c-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO (\\text{In}:\\text{Ga}:\\text{Zn} = 1:1:1 in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10-16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation.

  1. Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Sameshima, Toshiyuki; Nimura, Takeshi; Sugawara, Takashi; Ogawa, Yoshihiro; Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko

    2017-01-01

    Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.

  2. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    SciTech Connect

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-15

    We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  3. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    NASA Astrophysics Data System (ADS)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  4. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  5. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-01

    We report the abnormal behavior of the threshold voltage (VTH) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (VTG), while bottom gate bias (VBG) is less effect than VTG. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO2/a-IGZO and also the existence of large amount of In+ under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH- at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of VTG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  6. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    PubMed

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

  7. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  8. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  9. Thermodynamic properties of lanthanum in gallium-zinc alloys

    NASA Astrophysics Data System (ADS)

    Dedyukhin, A. S.; Shepin, I. E.; Kharina, E. A.; Shchetinskiy, A. V.; Volkovich, V. A.; Yamshchikov, L. F.

    2016-09-01

    Thermodynamic properties of lanthanum were determined in gallium-zinc alloys of the eutectic and over-eutectic compositions. The electromotive force measurements were used to determine thermodynamic activity and sedimentation technique to measure solubility of lanthanum in liquid metal alloys. Temperature dependencies of lanthanum activity, solubility and activity coefficients in alloys with Ga-Zn mixtures containing 3.64, 15 and 50 wt. % zinc were obtained.

  10. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    NASA Astrophysics Data System (ADS)

    Flewitt, A. J.; Powell, M. J.

    2014-04-01

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 106-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions

  11. Zinc oxide overdose

    MedlinePlus

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  12. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  13. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  14. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    SciTech Connect

    Pak, J.; Lin, W.; Wang, K.; Chinchore, A.; Shi, M.; Ingram, D. C.; Smith, A. R.; Sun, K.; Lucy, J. M.; Hauser, A. J.; Yang, F. Y.

    2010-07-15

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  15. Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

    2017-08-01

    In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

  16. Capacitive Behavior of Single Gallium Oxide Nanobelt

    PubMed Central

    Cai, Haitao; Liu, Hang; Zhu, Huichao; Shao, Pai; Hou, Changmin

    2015-01-01

    In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure. PMID:28793506

  17. Hydrogen chemisorption on gallium oxide polymorphs.

    PubMed

    Collins, Sebastián E; Baltanás, Miguel A; Bonivardi, Adrian L

    2005-02-01

    The chemisorption of H(2) over a set of gallia polymorphs (alpha-, beta-, and gamma-Ga(2)O(3)) has been studied by temperature-programmed adsorption equilibrium and desorption (TPA and TPD, respectively) experiments, using in situ transmission infrared spectroscopy. Upon heating the gallium oxides above 500 K in 101.3 kPa of H(2), two overlapped infrared signals developed. The 2003- and 1980-cm(-1) bands were assigned to the stretching frequencies of H bonded to coordinatively unsaturated (cus) gallium cations in tetrahedral and octahedral positions [nu(Ga(t)-H) and nu(Ga(o)-H), respectively]. Irrespective to the gallium cation geometrical environment, (i) a linear relationship between the integrated intensity of the whole nu(Ga-H) infrared band versus the Brunauer-Emmett-Teller surface area of the gallia was found and (ii) TPA and TPD results revealed that molecular hydrogen is dissociatively chemisorbed on any bulk gallium oxide polymorph following two reaction pathways. An endothermal, homolytic dissociation occurs over surface cus-gallium sites at T > 450 K, giving rise to Ga-H(I) bonds. The heat and entropy of this type I hydrogen adsorption were determined by the Langmuir's adsorption model as Deltah(I) = 155 +/- 25 kJ mol(-1) and Deltas(I) = 0.27 +/- 0.11 kJ mol(-1) K(-1). In addition, another exothermic, heterolytic adsorption sets in already in the low-temperature region. This type of hydrogen chemisorption involves surface Ga-O-Ga species, originating GaO-H and Ga-H(II) bonds which can only be removed from the gallia surface after heating under evacuation at T > 650 K. The measured desorption energy of this last, second-order process was equal to 77 +/- 10 kJ mol(-1). The potential of the H(2) chemisorption as a tool to measure or estimate the specific surface area of gallia and to discern the nature and proportion of gallium cation coordination sites on the surface of bulk gallium oxides is also analyzed.

  18. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  19. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  20. A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1- x O2 Gate dielectric and improved electrical and hysteresis performance

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

    2017-04-01

    The use of co-sputtered zirconium silicon oxide (Zr x Si1- x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0-150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1- x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V-1 s-1).

  1. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  2. Role of Oxidative Stress in the Induction of Metallothionein-2A and Heme Oxygenase-1 Gene Expression by the Antineoplastic Agent Gallium Nitrate in Human Lymphoma Cells

    PubMed Central

    Yang, Meiying; Chitambar, Christopher R.

    2008-01-01

    The mechanisms of action of gallium nitrate, an antineoplastic drug, are only partly understood. Using a DNA microarray to examine genes induced by gallium nitrate in CCRF-CEM cells, we found that gallium increased metallothionein-2A (MT2A) and heme oxygenase-1 (HO-1) gene expression and altered the levels of other stress-related genes. MT2A and HO-1 were increased after 6 and 16 h of incubation with gallium nitrate. An increase in oxidative stress, evidenced by a decrease in cellular GSH and GSH/GSSG ratio, and an increase in dichlorodihydrofluoroscein (DCF) fluorescence, was seen after 1 – 4 h incubation of cells with gallium nitrate. DCF fluorescence was blocked by the mitochondria-targeted antioxidant mitoquinone. N-acetyl-L-cysteine blocked gallium-induced MT2A and HO-1 expression and increased gallium’s cytotoxicity. Studies with a zinc-specific fluoroprobe suggested that gallium produced an expansion of an intracellular labile zinc pool, suggesting an action of gallium on zinc homeostasis. Gallium nitrate increased the phosphorylation of p38 mitogen-activated protein kinase and activated Nrf-2, a regulator of HO-1 gene transcription. Gallium-induced Nrf-2 activation and HO-1 expression were diminished by a p38 MAP kinase inhibitor. We conclude that gallium nitrate induces cellular oxidative stress as an early event which then triggers the expression of HO-1 and MT2A through different pathways. PMID:18586083

  3. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    PubMed

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries.

  4. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    SciTech Connect

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol E-mail: kyungcc@kaist.ac.kr; Park, Sang-Hee Ko E-mail: kyungcc@kaist.ac.kr

    2016-05-02

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al{sub 2}O{sub 3}, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV{sub th}) was 0 V even after a PBS time (t{sub stress}) of 3000 s under a gate voltage (V{sub G}) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV{sub th} value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV{sub th} values resulting from PBS quantitatively, the average oxide charge trap density (N{sub T}) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N{sub T} resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N{sub T} near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  5. Doped zinc oxide microspheres

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  6. Doped zinc oxide microspheres

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  7. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    SciTech Connect

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  8. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGES

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  9. The impact of gallium content on degradation, bioactivity, and antibacterial potency of zinc borate bioactive glass.

    PubMed

    Rahimnejad Yazdi, Alireza; Torkan, Lawrence; Stone, Wendy; Towler, Mark R

    2017-02-02

    Zinc borate glasses with increasing gallium content (0, 2.5, 5, 10, and 15 Wt % Ga) were synthesized and their degradation, bioactivity in simulated body fluid (SBF), and antibacterial properties were investigated. ICP measurements showed that increased gallium content in the glass resulted in increased gallium ion release and decreased release of other ions. Degradability declined with the addition of gallium, indicating the formation of more symmetric BO3 units with three bridging oxygens and asymmetric BO3 units with two bridging oxygens in the glass network as the gallium content in the series increased. The formation of amorphous CaP on the glass surface after 24 h of incubation in SBF was confirmed by SEM, XRD, and FTIR analyses. Finally, antibacterial evaluation of the glasses using the agar disc-diffusion method demonstrated that the addition of gallium increased the antibacterial potency of the glasses against P. aeruginosa (Gram-negative) while decreasing it against S. epidermidis (Gram-positive); considering the ion release trends, this indicates that the gallium ion is responsible for the glasses' antibacterial behavior against P. aeruginosa while the zinc ion controls the antibacterial activity against S. epidermidis. The statistical significance of the observed trends in the measurements were confirmed by applying the Kruskal-Wallis H Test. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2017.

  10. Arsenic doped zinc oxide

    SciTech Connect

    Volbers, N.; Lautenschlaeger, S.; Leichtweiss, T.; Laufer, A.; Graubner, S.; Meyer, B. K.; Potzger, K.; Zhou Shengqiang

    2008-06-15

    As-doping of zinc oxide has been approached by ion implantation and chemical vapor deposition. The effect of thermal annealing on the implanted samples has been investigated by using secondary ion mass spectrometry and Rutherford backscattering/channeling geometry. The crystal damage, the distribution of the arsenic, the diffusion of impurities, and the formation of secondary phases is discussed. For the thin films grown by vapor deposition, the composition has been determined with regard to the growth parameters. The bonding state of arsenic was investigated for both series of samples using x-ray photoelectron spectroscopy.

  11. Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces

    SciTech Connect

    Franciosi, A.

    1989-02-21

    A method is described for promoting oxidation of a silicon or gallium arsenide surface comprising: depositing a ytterbium overlayer on the silicon or gallium arsenide surface prior to the oxidation of the surface.

  12. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  13. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then oxidized...

  14. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then oxidized...

  15. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then oxidized...

  16. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid

  17. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  18. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  19. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  20. Study of zinc oxide ceramics

    SciTech Connect

    Petvkhov, A.P.; Fedotova, O.I.; Rumyantseva, I.A.; Teslenko, S.P.

    1986-01-01

    The authors determined the elemental and phase composition of zinc oxide ceramic (ZOC) by emission spectral (ESA), x-ray phase (XPA), and micro x-ray spectral (MXSA) analysis as well as by the method of electron spectroscopy for chemical analysis (ESCA). They studied the microstructure on metallographic and scanning electron microscopes using MXSA and ESCA data. Samples of ZOC were synthesized in the system of oxides Zn, Bi, Sb, Co, Mn, Sn, Si, Ni, Mg, Cr and B. The authors found that several mechanisms are responsible for the changes in the parameters of varistors based on zinc oxide ceramic, each of whose contribution depends on the operating conditions of the varistor.

  1. Selective removal of gallium (III) from aqueous solutions containing zinc or aluminum using sodium di-(n-octyl) phosphinate.

    PubMed

    Dumortier, Rémy; Rodil, Eva; Weber, Martin E; Vera, Juan H

    2004-04-01

    Gallium was removed selectively from aqueous solutions containing zinc or aluminum using sodium di-(n-octyl) phosphinate as a ligand (NaL). At low pH or low mole ratios, the gallium was removed by complexation with the ligand as GaL(3(S)), while the zinc or the aluminum remained in the solution. Nearly complete separation of gallium was obtained. By increasing the amount of ligand or by increasing the pH, the zinc or aluminum remaining in the solution was then removed as a solid complex: ZnL(2(S)) or AlL(3(S)), respectively. At a pH between 1.5 and 2 and a mole ratio ligand to total metals of 0.75 for zinc solutions and 1.0 for aluminum solutions, more than 98% of the gallium was selectively removed with a high molar selectivity, alpha(Ga/Zn) and alpha(Ga/Al), respectively. Over 95% of gallium was recovered from the solid GaL(3(S)) complex by treatment of the complex with a 3M NaOH solution and diethyl ether. The gallium was concentrated in the aqueous solution to 4 times its initial concentration and the ligand was extracted into the ether phase. After evaporation of the ether, 95% of the ligand was regenerated in its sodium form as a solid.

  2. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used in...

  3. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally...

  4. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used in...

  5. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally...

  6. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally...

  7. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally...

  8. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of § 73.1991...

  9. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used in...

  10. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of § 73.1991...

  11. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of § 73.1991...

  12. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used in...

  13. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally...

  14. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of § 73.1991...

  15. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use...

  16. Simultaneous determination of gallium and zinc in biological samples, wine, drinking water, and wastewater by derivative synchronous fluorescence spectrometry

    SciTech Connect

    Pozo, M.E.U.; de Torres, A.G.; Pavon, J.M.C.

    1987-04-15

    A simple, rapid, sensitive, and selective method for the simultaneous determination of gallium and zinc using derivative synchronous fluorescence spectrometry has been studied. This determination is based upon the formation of fluorescent complexes with salicylaldehyde thiocarbohydrazone (SATCH). The reaction is carried out at pH 4.7 in aqueous-ethanol medium (52% (v/v) ethanol). The use of second-derivative synchronous fluorescence spectrometry permits the simultaneous determination of gallium and zinc in the concentration intervals of 2-40 and 20-1500 ng/mL, respectively. The effect of interferences was studied. The method has been applied to the determination of gallium and zinc in biological samples (after destruction of the organic matter by using a HNO/sub 3/-H/sub 2/O/sub 2/ mixture), wine, drinking water, and wastewater.

  17. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc...). It is principally composed of Zn. (2) Color additive mixtures for drug use made with zinc oxide may...

  18. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc...). It is principally composed of Zn. (2) Color additive mixtures for drug use made with zinc oxide may...

  19. Zinc hydroxide sulphate and its transformation to crystalline zinc oxide.

    PubMed

    Moezzi, Amir; Cortie, Michael B; McDonagh, Andrew M

    2013-10-28

    The thermal transformation of zinc hydroxide sulphate hydrate to zinc oxide has been examined using synchrotron X-ray diffraction, thermogravimetric analysis, scanning electron microscopy, and surface area measurements. By collecting X-ray diffraction data in situ, we found that the dehydration of zinc hydroxide sulphate pentahydrate proceeded in discrete steps to form anhydrous zinc hydroxide sulphate. This compound then decomposed to a mixture of zinc oxide and a compound tentatively identified as Zn3(OH)2(SO4)2 at ~235 °C. At ~360 °C, the final dehydroxylation occurred with the formation of zinc oxy-sulphate, Zn3O(SO4)2, which then decomposed to ZnO at about ~800 °C. Interruption of the dehydration process can be used to synthesize the intermediate compounds.

  20. Quantum Monte Carlo models of substitutional point defects in zinc oxide and zinc selenide

    NASA Astrophysics Data System (ADS)

    Yu, Jaehyung; Ertekin, Elif

    2015-03-01

    Introducing dopants into semiconductors allows manipulation of electrical and optical properties, useful for applications such as optoelectronics and photovoltaics. While first principles quantitative descriptions of the defects properties in semiconductors are critical to understanding and engineering dopants in semiconductors, obtaining accurate descriptions has proven challenging in the past. Here we demonstrate the use of quantum Monte Carlo (QMC) methods to describing the properties of point defects in zinc oxide and zinc selenide. Due to its direct treatment of electron correlation, the QMC method is capable of accurate calculation of band gaps and defect behaviors. We describe the energetics and potential barrier to forming gallium DX-center defects according to QMC in zinc selenide, and compare the description to those of conventional and hybrid DFT. We also use QMC to determine the defect transition levels for nitrogen defects in zinc oxide, and show that QMC obtains descriptions that are in good agreement with GW and beyond-DFT approaches. Our results demonstrate the importance of accurate descriptions of electron correlation in the calculation of defect properties of semiconductors.

  1. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    NASA Astrophysics Data System (ADS)

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-12-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  2. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  3. Smooth cubic commensurate oxides on gallium nitride

    NASA Astrophysics Data System (ADS)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Biegalski, Michael D.; Christen, Hans M.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul

    2014-02-01

    Smooth, commensurate alloys of ⟨111⟩-oriented Mg0.52Ca0.48O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  4. Bidirectional reflectance of zinc oxide

    NASA Technical Reports Server (NTRS)

    Scott, R.

    1973-01-01

    This investigation was undertaken to determine original and useful information about the bidirection reflectance of zinc oxide. The bidirectional reflectance will be studied for the spectra between .25-2.5 microns and the hemisphere above the specimen. The following factors will be considered: (1) surface conditions; (2) specimen preparation; (3) specimen substrate, (4) polarization; (5) depolarization; (6) wavelength; and (7) angles of incident and reflection. The bidirectional reflectance will be checked by experimentally determined angular hemispherical measurements or hemispherical measurements will be used to obtain absolute bidirectional reflectance.

  5. Directed spatial organization of zinc oxide nanostructures

    DOEpatents

    Hsu, Julia; Liu, Jun

    2009-02-17

    A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

  6. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  7. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  8. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  9. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    PubMed

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  10. Formation of self-organized nanoporous anodic oxide from metallic gallium.

    PubMed

    Pandey, Bipin; Thapa, Prem S; Higgins, Daniel A; Ito, Takashi

    2012-09-25

    This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide monoliths within confined spaces like the inside of a microchannel. Here, solid gallium films prepared on planar substrates were employed to investigate the effects of anodization voltage (1, 5, 10, 15 V) and H(2)SO(4) concentration (1, 2, 4, 6 M) on anodic oxide morphology. Self-organized nanopores aligned perpendicular to the film surface were obtained upon anodization of gallium films in ice-cooled 4 and 6 M aqueous H(2)SO(4) at 10 and 15 V. Nanopore formation could be recognized by an increase in anodic current after a current decrease reflecting barrier oxide formation. The average pore diameter was in the range of 18-40 nm with a narrow diameter distribution (relative standard deviation ca. 10-20%), and was larger at lower H(2)SO(4) concentration and higher applied voltage. The maximum thickness of nanoporous anodic oxide was ca. 2 μm. In addition, anodic formation of self-organized nanopores was demonstrated for a solid gallium monolith incorporated at the end of a glass capillary. Nanoporous anodic oxide monoliths formed from a fusible metal will lead to future development of unique devices for chemical sensing and catalysis.

  11. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    NASA Astrophysics Data System (ADS)

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu, Jiangtao; Wakeham, William A.

    2012-09-01

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  12. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    SciTech Connect

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A.

    2012-09-15

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  13. Ferromagnetism of zinc oxide nanograined films

    NASA Astrophysics Data System (ADS)

    Straumal, B. B.; Protasova, S. G.; Mazilkin, A. A.; Schütz, G.; Goering, E.; Baretzky, B.; Straumal, P. B.

    2013-05-01

    The reasons for the appearance of ferromagnetic properties of zinc oxide have been reviewed. It has been shown that ferromagnetism appears only in polycrystals at a quite high density of grain boundaries. The critical size of grains is about 20 nm for pure ZnO and more than 40 μm for iron-doped zinc oxide. The solubility of manganese and cobalt in zinc oxide increases significantly with a decrease in the size of grains. The dependences of the saturation magnetization on the concentrations of cobalt, manganese, and ion are nonmonotonic. Even if the size of grains is below the critical value, the ferromagnetic properties of zinc oxide depend significantly on the texture of films and the structure of amorphous intercrystallite layers.

  14. Plasma-Sprayed Photocatalytic Zinc Oxide Coatings

    NASA Astrophysics Data System (ADS)

    Navidpour, A. H.; Kalantari, Y.; Salehi, M.; Salimijazi, H. R.; Amirnasr, M.; Rismanchian, M.; Azarpour Siahkali, M.

    2017-03-01

    Fabrication of semiconductor coatings with photocatalytic action for photodegradation of organic pollutants is highly desirable. In this research, pure zinc oxide, which is well known for its promising photocatalytic activity, was deposited on stainless-steel plates by plasma spraying. The phase composition and microstructure of the deposited films were studied by x-ray diffraction analysis and scanning electron microscopy, respectively. Despite the low-energy conditions of the plasma spraying process, the zinc oxide coatings showed good mechanical integrity on the substrate. Their photocatalytic activity was evaluated using aqueous solution of methylene blue at concentration of 5 mg L-1. The results showed the potential of the plasma spraying technique to deposit zinc oxide coatings with photocatalytic action under ultraviolet illumination. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy confirmed that the plasma spraying method could deposit zinc oxide films with higher photoabsorption ability relative to the initial powder.

  15. Total neutron scattering investigation of the structure of a cobalt gallium oxide spinel prepared by solvothermal oxidation of gallium metal

    NASA Astrophysics Data System (ADS)

    Playford, Helen Y.; Hannon, Alex C.; Tucker, Matthew G.; Lees, Martin R.; Walton, Richard I.

    2013-11-01

    A new solvothermal synthesis route to mixed-metal gallium oxides with the spinel structure has been developed for ternary oxides of ideal composition Ga3-xMxO4-y (M=Co, Zn, Ni). The structure of the novel cobalt gallate produced in this manner, Ga1.767(8)Co0.973(8)O3.752(8), has been determined from total neutron scattering to be a partially defective spinel with mixed-valent cobalt (approximately 25% Co3+ and 75% Co2+) and with vacancies on approximately 6% of oxygen sites. Pair distribution function (PDF) analysis reveals significant local deviations from the average cubic structure, which are attributed to the conflicting coordination preferences of the Co2+ (potential Jahn-Teller distortion) and Ga3+ (Ga off-centring). Reverse Monte Carlo (RMC) modelling supports this conclusion since different metal-oxygen bond-distance distributions are found for the two cations in the refined configuration. An investigation of magnetic properties shows evidence of short-range magnetic order and spin-glass-like behaviour, consistent with the structural disorder of the material.

  16. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  17. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  18. Zinc oxide varistor time response

    SciTech Connect

    Modine, F.A.; Major, R.W.; Choi, S.I.; Bergman, L.B.; Silver, M.N.

    1989-02-01

    The application of a voltage to a zinc oxide varistor produces transient currents that persist on a time scale extending from 10/sup /minus/8/ to 10/sup 5/ seconds at the least. The transient currents are characterized by a power-law time dependence (i.e., I =I/sub o//t/sup m/, where m is a little less than unity) and a weak temperature dependence that is described by a thermal activation energy of about 100 meV or less. The time dependence is confirmed by an ac admittance that increases as a noninteger power of the frequency (i.e., Y = K(j..omega..)/sup m/), with Fourier theory providing the connection between the time and frequency measurements. Also, the transient currents are accompanied by changes in the ac admittance measured at fixed frequencies that reveal similar time and temperature dependencies. The transient currents are not well understood, but they are typical of the non-Debye electrical response that is found in many materials. An explanation of the transients is obtained if a distribution of relaxation times is assumed. 7 refs., 6 figs.

  19. Epitaxial gallium oxide on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Pechnikov, A. I.; Feoktistov, N. A.

    2016-09-01

    Well-textured gallium oxide β-Ga2O3 layers with a thickness of 1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer 100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (overline 2 01) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

  20. Properties of zinc oxide at low and moderate temperatures

    NASA Astrophysics Data System (ADS)

    Lashkarev, G. V.; Karpyna, V. A.; Lazorenko, V. I.; Ievtushenko, A. I.; Shtepliuk, I. I.; Khranovskyy, V. D.

    2011-03-01

    The properties of zinc oxide are examined as an analog of gallium nitride over a wide range of temperatures and possible applications. Its economic and environmental advantages are noted, as well as its radiation hardness, compared to group III nitrides. Methods for growing films and nanostructures with high crystal perfection are proposed. In particular, a magnetron technique for layer-by-layer growth of films is implemented which makes it possible to obtain high structural perfection and substantial thicknesses unattainable by several other methods. The feasibility of producing monochromatic UV radiation from films excited by short-wavelength radiation and electrons is demonstrated; this means that they may be useable as short-wavelength radiation sources. Efficient field emission by ZnO nanostructures and films is demonstrated and opens up the prospect of their use in vacuum microelectronics equipment. Nitrogen-doped ZnO films, in particular, have been used to fabricate a phototransistor with a sensitivity two orders of magnitude higher than conventional detectors. The physical basis for creating LEDs for different colors based on ZnO films and solid solutions with CdO is discussed. The importance of studying the physics and technology of zinc oxide-based devices is emphasized.

  1. Strategies for gallium removal after focused ion beam patterning of ferroelectric oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Schilling, A.; Adams, T.; Bowman, R. M.; Gregg, J. M.

    2007-01-01

    As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed material. These platelets are thought to be gallium oxide. Etching using nitric and hydrochloric acids had no effect on the gallium-rich platelets. Effective platelet removal involved thermal annealing at 700 °C for 1 h in a vacuum followed by 1 h in oxygen, and then a post-annealing low-power plasma clean in an Ar/O atmosphere. Similar processing is likely to be necessary for the full recovery of post FIB-milled nanostructures in oxide ceramic systems in general.

  2. A Gallium Oxide-Graphene Oxide Hybrid Composite for Enhanced Photocatalytic Reaction

    PubMed Central

    Kim, Seungdu; Han, Kook In; Lee, In Gyu; Park, Won Kyu; Yoon, Yeojoon; Yoo, Chan Sei; Yang, Woo Seok; Hwang, Wan Sik

    2016-01-01

    Hybrid composites (HCs) made up of gallium oxide (GaO) and graphene oxide (GO) were investigated with the intent of enhancing a photocatalytic reaction under ultraviolet (UV) radiation. The material properties of both GaO and GO were preserved, even after the formation of the HCs. The incorporation of the GO into the GaO significantly enhanced the photocatalytic reaction, as indicated by the amount of methylene blue (MB) degradation. The improvements in the reaction were discussed in terms of increased surface area and the retarded recombination of generated charged carriers. PMID:28335255

  3. A comparison of zinc sulfate and oxide absorption in humans using an oral zinc tolerance test

    SciTech Connect

    English-Westcott, J.L.; Hambidge, K.M.; Ellenbogen, L. Lederle Labs., Pearl River, NY )

    1991-03-15

    The objective of this study was to compare the absorption of zinc from zinc sulfate and zinc oxide, two compounds that are used frequently for zinc supplementation. Absorption of zinc was estimated by an oral zinc tolerance test. At three to five day intervals, each of 16 subjects received either 40 mg of zinc as sulfate, 40 mg of zinc as oxide or 80 ml of water alone. These were administered in a random order, at 0700 hours after a ten hour fast. Plasma zinc was measured at 0, 1, 2, 3, 4, 5, and 6 hours. The areas under the curve were compared in three ways: actual mean plasma zinc values, mean change from the baseline in plasma zinc values, and plasma zinc values after subtracting the control values. The peak plasma zinc, mean {plus minus} SD, occurred two hours after ingestion of the capsules. No increase in plasma zinc values occurred during the control treatment. No significant difference was observed between the response to zinc oxide and zinc sulfate, although both were significantly different from the control treatment. It is concluded that equivalent doses of zinc sulfate and zinc oxide can be used to administer zinc supplementation.

  4. Patterned Fabrication of Zinc Oxide Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Khan, Sahar; Lamson, Thomas; Xu, Huizhong

    Zinc oxide nanowires possess desirable mechanical, thermodynamic, electrical, and optical properties. Although the hydrothermal growth process can be applied in tolerable growth conditions, the dimension and density of nanowires has a complex dependence on substrate pre-treatment, precursor concentrations, and growth conditions. Precise control of the geometry and density of nanowires as well as the location of nanowires would allow for the fabrication of useful nanowaveguide devices. In this work, we used electron beam lithography to pattern hole arrays in a polymer layer on gold-coated glass substrates and synthesized zinc oxide nanowires inside these holes. Arrays of nanowires with diameters ranging from 50 nm to 140 nm and various spacings were obtained. The transmission of light through these zinc oxide nanowire arrays in a silver film was also studied. This research was supported by the Seed Grant Program of St. John's University and the National Science Foundation under Grant No. CBET-0953645.

  5. Zinc oxide interdigitated electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Sin L., L.; Arshad, M. K. Md.; Fathil, M. F. M.; Adzhri, R.; M. Nuzaihan M., N.; Ruslinda, A. R.; Gopinath, Subash C. B.; Hashim, U.

    2016-07-01

    In biosensors, zinc oxide (ZnO) thin film plays a crucial role in term of stability, sensitivity, biocompatibility and low cost. Interdigitated electrode (IDE) design is one of the device architecture in biosensor for label free, stability and sensitivity. In this paper, we discuss the fabrication of zinc oxide deposited on the IDE as a transducer for sensing of biomolecule. The formation of APTES had increase the performance of the surface functionalization..Furthermore we extend the discuss on the surface functionalization process which is utilized for probe attachment onto the surface of biosensor through surface immobilization process, thus enables the sensing of biomolecules for biosensor application.

  6. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF COLOR... color additive zinc oxide shall conform in identity and specifications to the requirements of § 73.1991... cosmetics intended for use in the area of the eye, in amounts consistent with good manufacturing practice...

  7. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  8. GALLIUM ARSENIDE DENDRITE SINGLE CRYSTAL PROGRAM

    DTIC Science & Technology

    ARSENIDES, *GALLIUM COMPOUNDS, *LABORATORY FURNACES, * SOLAR CELLS , CRUCIBLES, DESIGN, DIFFUSION, EXPLOSIONS, INTERMETALLIC COMPOUNDS, MATERIALS, PHOSPHORUS, SINGLE CRYSTALS, TEMPERATURE CONTROL, ZINC

  9. A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

    NASA Technical Reports Server (NTRS)

    Kuhlman, G. J.

    1979-01-01

    The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

  10. Low Temperature Flux Growth of 2H-SiC and Beta-Gallium Oxide

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Choa, Fow-Sen; Su, Ching-Hua; Arnold, Bradley; Kelly, Lisa

    2016-01-01

    We present brief overview of our study on the low temperature flux growth of two very important novel wide bandgap materials 2H-SiC and Beta-gallium oxide (Beta-Ga2O3). We have synthesized and grown 5 millimeter to 1 centimeter size single crystals of Beta-gallium oxide (Beta-Ga2O3). We used a flux and semi wet method to grow transparent good quality crystals. In the semi-wet method Ga2O3 was synthesized with starting gallium nitrate solution and urea as a nucleation agent. In the flux method we used tin and other metallic flux. This crystal was placed in an alumina crucible and temperature was raised above 1050 degrees Centigrade. After a time period of thirty hours, we observed prismatic and needle shaped crystals of gallium oxide. Scanning electron microscopic studies showed step growth morphology. Crystal was polished to measure the properties. Bandgap was measured 4.7electronvolts using the optical absorption curve. Another wide bandgap hexagonal 2H-SiC was grown by using Si-Al eutectic flux in the graphite crucible. We used slight AlN also as the impurity in the flux. The temperature was raised up to 1050 degrees Centigrade and slowly cooled to 850 degrees Centigrade. Preliminary characterization results of this material are also reported.

  11. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C.

    2014-09-01

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

  12. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  13. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.

    PubMed

    Kerr, A J; Chagarov, E; Gu, S; Kaufman-Osborn, T; Madisetti, S; Wu, J; Asbeck, P M; Oktyabrsky, S; Kummel, A C

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

  14. Correlation of Zinc with Oxidative Stress Biomarkers

    PubMed Central

    Morales-Suárez-Varela, María; Llopis-González, Agustín; González-Albert, Verónica; López-Izquierdo, Raúl; González-Manzano, Isabel; Cháves, Javier; Huerta-Biosca, Vicente; Martin-Escudero, Juan C.

    2015-01-01

    Hypertension and smoking are related with oxidative stress (OS), which in turn reports on cellular aging. Zinc is an essential element involved in an individual’s physiology. The aim of this study was to evaluate the relation of zinc levels in serum and urine with OS and cellular aging and its effect on the development of hypertension. In a Spanish sample with 1500 individuals, subjects aged 20–59 years were selected, whose zinc intake levels fell within the recommended limits. These individuals were classified according to their smoking habits and hypertensive condition. A positive correlation was found (Pearson’s C = 0.639; p = 0.01) between Zn serum/urine quotient and oxidized glutathione levels (GSSG). Finally, risk of hypertension significantly increased when the GSSG levels exceeded the 75 percentile; OR = 2.80 (95%CI = 1.09–7.18) and AOR = 3.06 (95%CI = 0.96–9.71). Low zinc levels in serum were related with OS and cellular aging and were, in turn, to be a risk factor for hypertension.  PMID:25774936

  15. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    SciTech Connect

    Lim, K.; Schelhas, L. T.; Siah, S. C.; Brandt, R. E.; Zakutayev, A.; Lany, S.; Gorman, B.; Sun, C. J.; Ginley, D.; Buonassisi, T.; Toney, M. F.

    2016-10-03

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.

  16. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    DOE PAGES

    Lim, K.; Schelhas, L. T.; Siah, S. C.; ...

    2016-10-07

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Gamore » sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. Furthermore, these observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.« less

  17. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    SciTech Connect

    Lim, K.; Schelhas, L. T.; Siah, S. C.; Brandt, R. E.; Zakutayev, A.; Lany, S.; Gorman, B.; Sun, C. J.; Ginley, D.; Buonassisi, T.; Toney, M. F.

    2016-10-03

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.

  18. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  19. Process for preparing zinc oxide-based sorbents

    DOEpatents

    Gangwal, Santosh Kumar [Cary, NC; Turk, Brian Scott [Durham, NC; Gupta, Raghubir Prasad [Durham, NC

    2011-06-07

    The disclosure relates to zinc oxide-based sorbents, and processes for preparing and using them. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  20. Oxidation of polycrystalline materials based on zinc and cadmium chalcogenides

    SciTech Connect

    Gunchenko, N.N.; Dronova, G.N.; Maksimova, I.A.; Mironov, I.A.; Pavlova, V.N.; Pevtsova, N.I.

    1988-06-01

    The resistance of polycrystalline zinc sulfide and selenide and cadmium telluride to atmospheric exposure in heating to 300-700/degrees/C was investigated. Polycrystalline zinc sulfide (KO-2 optical ceramic) was prepared by hot powder molding and zinc selenide and cadmium telluride were prepared by evaporation with filtrations of vapors through porous materials and subsequent condensation on a heated support. Zinc sulfide was most sensitive to oxidation. The rate of oxidation of polycrystals was slightly higher than for single crystals. The possibility of using oxidation for creating protective and antireflective coatings on zinc sulfide and selenide should be noted.

  1. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  2. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions

    NASA Astrophysics Data System (ADS)

    Burke, Benjamin P.; Baghdadi, Neazar; Kownacka, Alicja E.; Nigam, Shubhanchi; Clemente, Gonçalo S.; Al-Yassiry, Mustafa M.; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J.

    2015-09-01

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging.The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no

  3. Electron-nuclear double resonance studies of point defects in silver gallium selenide and zinc germanium phosphide

    NASA Astrophysics Data System (ADS)

    Stevens, Kevin Taylor

    Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies have been performed on two chalcopyrite crystals grown by the horizontal-gradient-freeze technique. An impurity defect has been characterized in silver gallium selenide (AgGaSe2) and has been identified as a Ni+ ion substituting for a Ag+ ion. This nickel defect exists in as-grown crystals in the paramagnetic state. A complete ENDOR angular dependence study provided spin-Hamiltonian parameters for the 61Ni isotope as well as the neighboring selenium ions (77Se) and gallium ions (69Ga and 71Ga). Optical absorption data taken at room temperature and low temperature showed a broad band peaking near 2.2 microns. The zero-phonon line position was determined from the low temperature data. The EPR and optical absorption data were consistent with each other, suggesting the absorption band was associated with Ni+ impurities. Two point defects have been identified and characterized in zinc germanium phosphide (ZnGeP 2). The first is a copper impurity, which substitutes for a zinc ion in the ZnGeP2 lattice. The copper impurity acts as a conventional acceptor and is not paramagnetic in the as-grown condition, i.e., the light-off condition. Upon illumination of the sample with 633-nm or 1064-nm light, the copper acceptor gives up an electron and becomes paramagnetic. The EPR spectrum consists of resolved hyperfine due to the copper nucleus (63Cu and 65Cu) as well as neighboring phosphorous nuclei ( 31P). The spin-Hamiltonian parameters have been determined from ENDOR measurements of the light-induced EPR spectrum. The second defect that has been studied in ZnGeP2 is the previously identified zinc vacancy (VZn). EPR and ENDOR studies have previously characterized the g values and primary hyperfine interactions associated with the VZn. Further ENDOR measurements have been made in order to identify hyperfine interactions with more distant phosphorous neighbors. The results led to spin

  4. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    PubMed Central

    Long, Rathnait D.; McIntyre, Paul C.

    2012-01-01

    The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  5. A LABORATORY COMPARISON OF FOUR ZINC OXIDE-EUGENOL FORMULATIONS AS RESTORATIVE MATERIALS.

    DTIC Science & Technology

    The ability of four zinc oxide - eugenol formulations to serve as long-term intermediate restorative materials was investigated. They were: (a...zinc oxide - eugenol , (b) zinc oxide - eugenol + EBA (ethoxybenzoic acid), (c) reinforced zinc oxide - eugenol , and (d) a reinforced zinc oxide - eugenol

  6. Characterization of Amorphous Zinc Tin Oxide Semiconductors

    SciTech Connect

    Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamas; Flynn, Brendan T.; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2012-06-12

    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water, carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.

  7. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity.

  8. Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.

    PubMed

    Kim, Dae-Hee; Kim, Dae-Hyun; Kim, Yeong-Cheol

    2014-10-01

    The initial oxidation of a gallium arsenide (001)-β2(2 x 4) surface with an oxygen molecule was investigated using density functional theory. The oxygen molecule was adsorbed on the surface without any energy barrier. The dissociation of the oxygen molecule on the first arsenic layer had two dissociation paths; the inter-dimer and intra-dimer. The inter-dimer dissociation was the dominant dissociation path based on the energy barriers. The two dissociated oxygen atoms preferred breaking the arsenic-gallium back-bond to form arsenic-oxygen-gallium bonds. Our results are in good agreement with literature of the scanning tunneling microscope study.

  9. Recent developments in zinc oxide target chemistry

    SciTech Connect

    Heaton, R.C.; Taylor, W.A.; Phillips, D.R.; Jamriska, D.J. Sr.; Garcia, J.B.

    1994-04-01

    Zinc oxide targets irradiated with high energy protons at the Los Alamos Meson Physics Facility (LAMPF) contain a number of radioactive spallation products in quantities large enough to warrant recovery. This paper describes methods for recovering {sup 7}Be, {sup 46}Sc, and {sup 48}V from such targets and offers suggestions on possible ways to recover additional isotopes. The proposed methods are based on traditional precipitation and ion exchange techniques, are readily adaptable to hot cell use, and produce no hazardous waste components. The products are obtained in moderate to high yields and have excellent radiopurity.

  10. Zinc Absorption by Young Adults from Supplemental Zinc Citrate Is Comparable with That from Zinc Gluconate and Higher than from Zinc Oxide123

    PubMed Central

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnić, Marica; Hurrell, Richard F.

    2014-01-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with 67Zn and 70Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6–71.0) and was not different from that from zinc gluconate with 60.9% (50.6–71.7). Absorption from zinc oxide at 49.9% (40.9–57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627. PMID:24259556

  11. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.

    PubMed

    Carter, Dean E; Aposhian, H Vasken; Gandolfi, A Jay

    2003-12-15

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  12. Zinc oxide doped graphene oxide films for gas sensing applications

    SciTech Connect

    Chetna, Kumar, Shani; Chaudhary, S.; Kapoor, A.; Garg, A.; Chowdhuri, A.; Dhingra, V.

    2016-05-06

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer’s method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  13. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts.

    PubMed

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-07-20

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation.

  14. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts

    PubMed Central

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  15. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  16. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  17. Interface effects in zinc oxide varistors

    SciTech Connect

    Levinson, L.M.; Phillip, H.R.; Sonder, E.

    1986-08-01

    Zinc oxide varistors are electronic ceramic materials whose electrical behavior is dominated by grain boundary interface states. The unique properties of varistor ceramics are determined by the segregation of certain impurity atoms to the grain interface, creating electrical barriers to current flow. At low voltages, electrons transfer over these barriers by thermionic emission. At a critical voltage, electrons transferred over the grain interface have sufficient energy to create minority barriers (holes). These holes act to dramatically decrease the grain boundary electrical barriers leading to the observed rapid increase in current flow. Hole creation has recently been verified by optical means. Measurements of varistor degradation, varistor oxidation-reduction phenomena, and the behavior of ''primitive'' varistors with only modest current-voltage nonlinearity indicate that more than one parallel leakage path can control the varistor characteristics at lower currents. 19 refs., 12 figs.

  18. Zinc.

    PubMed

    Barceloux, D G

    1999-01-01

    The use of zinc in metal alloys and medicinal lotions dates back before the time of Christ. Currently, most of the commercial production of zinc involves the galvanizing of iron and the manufacture of brass. Some studies support the use of zinc gluconate lozenges to treat the common cold, but there are insufficient data at this time to recommend the routine use of these lozenges. Zinc is an essential co-factor in a variety of cellular processes including DNA synthesis, behavioral responses, reproduction, bone formation, growth, and wound healing. Zinc is a relatively common metal with an average concentration of 50 mg/kg soil and a range of 10-300 mg/kg soil. Meat, seafood, dairy products, nuts, legumes, and whole grains contain relatively high concentrations of zinc. The mobility of zinc in anaerobic environments is poor and therefore severe zinc contamination occurs primarily near points sources of zinc release. The recommended daily allowance for adults is 15 mg zinc. The ingestion of 1-2 g zinc sulfate produces emesis. Zinc compounds can produce irritation and corrosion of the gastrointestinal tract, along with acute renal tubular necrosis and interstitial nephritis. Inhalation of high concentrations of zinc chloride from smoke bombs detonated in closed spaces may cause chemical pneumonitis and adult respiratory distress syndrome. In the occupational setting inhalation of fumes from zinc oxide is the most common cause of metal fume fever (fatigue, chills, fever, myalgias, cough, dyspnea, leukocytosis, thirst, metallic taste, salivation). Zinc compounds are not suspected carcinogens. Treatment of zinc toxicity is supportive. Calcium disodium ethylenediaminetetraacetate (CaNa2EDTA) is the chelator of choice based on case reports that demonstrate normalization of zinc concentrations, but there are few clinical data to confirm the efficacy of this agent.

  19. Electrical characterization of plasma-grown oxides on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

    1985-01-01

    Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

  20. Relative Penetration of Zinc Oxide and Zinc Ions into Human Skin after Application of Different Zinc Oxide Formulations.

    PubMed

    Holmes, Amy M; Song, Zhen; Moghimi, Hamid R; Roberts, Michael S

    2016-02-23

    Zinc oxide (ZnO) is frequently used in commercial sunscreen formulations to deliver their broad range of UV protection properties. Concern has been raised about the extent to which these ZnO particles (both micronized and nanoparticulate) penetrate the skin and their resultant toxicity. This work has explored the human epidermal skin penetration of zinc oxide and its labile zinc ion dissolution product that may potentially be formed after application of ZnO nanoparticles to human epidermis. Three ZnO nanoparticle formulations were used: a suspension in the oil, capric caprylic triglycerides (CCT), the base formulation commonly used in commercially available sunscreen products; an aqueous ZnO suspension at pH 6, similar to the natural skin surface pH; and an aqueous ZnO suspension at pH 9, a pH at which ZnO is stable and there is minimal pH-induced impairment of epidermal integrity. In each case, the ZnO in the formulations did not penetrate into the intact viable epidermis for any of the formulations but was associated with an enhanced increase in zinc ion fluorescence signal in both the stratum corneum and the viable epidermis. The highest labile zinc fluorescence was found for the ZnO suspension at pH 6. It is concluded that, while topically applied ZnO does not penetrate into the viable epidermis, these applications are associated with hydrolysis of ZnO on the skin surface, leading to an increase in zinc ion levels in the stratum corneum, thence in the viable epidermis and subsequently in the systemic circulation and the urine.

  1. Kinetics of the reduction of the zinc oxide in zinc ferrite with iron

    SciTech Connect

    Donald, J.R.; Pickles, C.A.

    1995-12-31

    Electric arc furnace (EAF) dust, which can be considered as a by-product of the steel recycling process, contains significant quantities of recoverable zinc and iron, as well as hazardous elements such as cadmium, lead and chromium, which can be leached by ground water. The zinc in the EAF dust is found almost entirely in the form of either zinc oxide or zinc ferrite, the latter accounting for 20 to 50 percent of the total zinc. It is important that an efficient process be developed which renders the dust inert, while reclaiming the valuable metals to off-set processing costs. During the conventional carbothermic reduction processes, iron is formed, and this iron can participate in the reduction of the zinc oxide in zinc ferrite. In the present work, the reduction of the zinc oxide in zinc ferrite by iron according to the following reaction: ZnO{sup {sm_bullet}}Fe{sub 2}O{sub (s.s.)} + 2 Fe{sub (s)} = Zn{sub (g)} + 4 FeO{sub (s)} was studied in an argon atmosphere using a thermogravimetric technique. First, a thermodynamic analysis was performed using the F*A*C*T computational system. Then, the effects of briquette aspect ratio (l/d), temperature, zinc ferrite particle size, amount of iron added, as well as additions such as lime, sodium chloride, and calcium fluoride were investigated.

  2. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN: Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

    SciTech Connect

    Hossain, T.; Wei, D.; Nepal, N.; Garces, N. Y.; Hite, J. K.; Meyer, H. M.; Eddy, C. R.; Baker, Troy; Mayo, Ashley; Schmitt, Jason; Edgar, J. H.

    2014-02-24

    We report the benefits of dry oxidation of n -GaN for the fabrication of metal-oxide-semiconductor structures. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 °C to produce thin, smooth GaOx layers. Moreover, the GaN sample oxidized for 30 minutes had the best properties. Its surface roughness (0.595 nm) as measured by atomic force microscopy (AFM) was the lowest. Capacitance-voltage measurements showed it had the best saturation in accumulation region and the sharpest transition from accumulation to depletion regions. Under gate voltage sweep, capacitance-voltage hysteresis was completely absent. The interface trap density was minimum (Dit = 2.75×1010 cm–2eV–1) for sample oxidized for 30 mins. These results demonstrate a high quality GaOx layer is beneficial for GaN MOSFETs.

  3. Antifouling properties of zinc oxide nanorod coatings.

    PubMed

    Al-Fori, Marwan; Dobretsov, Sergey; Myint, Myo Tay Zar; Dutta, Joydeep

    2014-01-01

    In laboratory experiments, the antifouling (AF) properties of zinc oxide (ZnO) nanorod coatings were investigated using the marine bacterium Acinetobacter sp. AZ4C, larvae of the bryozoan Bugula neritina and the microalga Tetraselmis sp. ZnO nanorod coatings were fabricated on microscope glass substrata by a simple hydrothermal technique using two different molar concentrations (5 and 10 mM) of zinc precursors. These coatings were tested for 5 h under artificial sunlight (1060 W m(-2) or 530 W m(-2)) and in the dark (no irradiation). In the presence of light, both the ZnO nanorod coatings significantly reduced the density of Acinetobacter sp. AZ4C and Tetraselmis sp. in comparison to the control (microscope glass substratum without a ZnO coating). High mortality and low settlement of B. neritina larvae was observed on ZnO nanorod coatings subjected to light irradiation. In darkness, neither mortality nor enhanced settlement of larvae was observed. Larvae of B. neritina were not affected by Zn(2+) ions. The AF effect of the ZnO nanorod coatings was thus attributed to the reactive oxygen species (ROS) produced by photocatalysis. It was concluded that ZnO nanorod coatings effectively prevented marine micro and macrofouling in static conditions.

  4. Supported versus colloidal zinc oxide for advanced oxidation processes

    NASA Astrophysics Data System (ADS)

    Laxman, Karthik; Al Rashdi, Manal; Al Sabahi, Jamal; Al Abri, Mohammed; Dutta, Joydeep

    2017-07-01

    Photocatalysis is a green technology which typically utilizes either supported or colloidal catalysts for the mineralization of aqueous organic contaminants. Catalyst surface area and surface energy are the primary factors determining its efficiency, but correlation between the two is still unclear. This work explores their relation and hierarchy in a photocatalytic process involving both supported and colloidal catalysts. In order to do this the active surface areas of supported zinc oxide nanorods (ZnO NR's) and colloidal zinc oxide nanoparticles (having different surface energies) were equalized and their phenol oxidation mechanism and capacity was analyzed. It was observed that while surface energy had subtle effects on the oxidation rate of the catalysts, the degradation efficiency was primarily a function of the surface area; which makes it a better parameter for comparison when studying different catalyst forms of the same material. Thus we build a case for the use of supported catalysts, wherein their catalytic efficiency was tested to be unaltered over several days under both natural and artificial light, suggesting their viability for practical applications.

  5. Photocatalytic paper using zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M.; Dutta, Joydeep

    2010-10-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm-2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions.

  6. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  7. Review of Zinc Oxide Thin Films

    DTIC Science & Technology

    2014-12-23

    Laboratory Air Force Materiel Command   a. REPORT U   b. ABSTRACT U   c. THIS PAGE U REPORT DOCUMENTATION PAGE Form ApprovedOMB No. 0704-0188 The public...PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1.  REPORT DATE (DD-MM-YYYY)      18-12-2014 2.  REPORT TYPE      Final Performance 3.  DATES...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 1    Review of Zinc Oxide Thin Films   Abstract  The present review paper reports on the

  8. Hybrid zinc oxide nanoparticles for biophotonics.

    PubMed

    John, Sween; Marpu, Sreekar; Li, Jianyou; Omary, Mohammad; Hu, Zhibing; Fujita, Yasuhisha; Neogi, Arup

    2010-03-01

    A novel Zinc oxide (ZnO)-Hydrogel fluorescent colloidal semiconductor nanomaterials system is presented for potential bio-medical applications such as cell and tissue imaging. ZnO nanoparticles (NPs) synthesized using arc discharge technique has been conjugated to bio-compatible Poly N-isopropylacrylamide (PNIPAM) based hydrogel polymer matrix. The stability and fluorescence of ZnO nanoparticles are significantly enhanced using hydrogel colloidal dispersion. Photoluminescence spectroscopy indicates approximately 10 times enhancement in fluorescence in ZnO-Hydrogel colloidal system compared to ZnO-Water system, confirming the surface modification of ZnO nanoparticles by hydrogel polymer matrix. Femtosecond time resolved fluorescence measurement demonstrates that the fluorescence is due to the enhancement in absorption by the ZnO nanoparticles due to scattering by PNIPAM nanospheres.

  9. Photocatalytic paper using zinc oxide nanorods

    PubMed Central

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M; Dutta, Joydeep

    2010-01-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm–2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions. PMID:27877367

  10. Production of nano zinc, zinc sulphide and nanocomplex of magnetite zinc oxide by Brevundimonas diminuta and Pseudomonas stutzeri.

    PubMed

    Mirhendi, Mansoureh; Emtiazi, Giti; Roghanian, Rasoul

    2013-12-01

    ZnO (Zincite) nanoparticle has many industrial applications and is mostly produced by chemical reactions, usually prepared by decomposition of zinc acetate or hot-injection and heating-up method. Synthesis of semi-conductor nanoparticles such as ZnS (Sphalerite) by ultrasonic was previously reported. In this work, high-zinc tolerant bacteria were isolated and used for nano zinc production. Among all isolated microorganisms, a gram negative bacterium which was identified as Brevundimonas diminuta could construct nano magnetite zinc oxide on bacterial surface with 22 nm in size and nano zinc with 48.29 nm in size. A piece of zinc metal was immersed in medium containing of pure culture of B. diminuta. Subsequently, a yellow-white biofilm was formed which was collected from the surface of zinc. It was dried at room temperature. The isolated biofilm was analysed by X-ray diffractometer. Interestingly, the yield of these particles was higher in the light, with pH 7 at 23°C. To the best of the authors knowledge, this is the first report about the production of nano zinc metal and nano zinc oxide that are stable and have anti-bacterial activities with magnetite property. Also ZnS (sized 12 nm) produced by Pseudomonas stutzeri, was studied by photoluminescence and fluorescent microscope.

  11. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

    PubMed

    Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

    2013-01-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  12. Zinc

    USDA-ARS?s Scientific Manuscript database

    Zinc was recognized as an essential trace metal for humans during the studies of Iranian adolescent dwarfs in the early 1960s. Zinc metal existing as Zn2+ is a strong electron acceptor in biological systems without risks of oxidant damage to cells. Zn2+ functions in the structure of proteins and is ...

  13. Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

    ERIC Educational Resources Information Center

    Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

    2014-01-01

    In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

  14. Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

    ERIC Educational Resources Information Center

    Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

    2014-01-01

    In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

  15. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

    SciTech Connect

    Zhang, Xueqiang; Lamere, Edward; Ptasinska, Sylwia; Liu, Xinyu; Furdyna, Jacek K.

    2014-05-05

    The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

  16. Fabrication and characterization of MOSCAP on bulk beta-gallium oxide substrate with ALD silicon dioxide

    NASA Astrophysics Data System (ADS)

    Zeng, Ke

    Beta-gallium oxide (beta-Ga2O3) has recently attracted a lot of attention because of its very high Baliga's figure of merit (BFOM), which indicates a good application prospect for it in the field of power electronics. Its high breakdown field and low cost makes it very attractive, but the low thermal conductivity and low mobility hinder its performance improvement. MOSFET with ALD Al2O3 gate dielectric has been successfully fabricated and reported. In this thesis, we investigated an alternative choice for gate dielectric -- ALD SiO2. This new dielectric not only offers bigger conduction band offset, but also gives a very nice interface property. And both of them are very important for improving the performance of power devices. MOSCAPs are fabricated using several special techniques to study the properties related to this new oxide. Conduction band offset, oxide trap density and interface trap density are extracted using a few IV and CV methods.

  17. Surface nature of nanoparticle zinc-titanium oxide aerogel catalysts

    NASA Astrophysics Data System (ADS)

    Wang, Chien-Tsung; Lin, Jen-Chieh

    2008-05-01

    Nanoparticle zinc-titanium oxide materials were prepared by the aerogel approach. Their structure, surface state and reactivity were investigated. Zinc titanate powders formed at higher zinc loadings possessed a higher surface area and smaller particle size. X-ray photoelectron spectroscopy (XPS) revealed a stronger electronic interaction between Zn and Ti atoms in the mixed oxide structure and showed the formation of oxygen vacancy due to zinc doping into titania or zinc titanate matrices. The 8-45 nm aerogel particles were evaluated as catalysts for methanol oxidation in an ambient flow reactor. Carbon dioxide was favorably produced on the oxides with anion defects. Titanium based oxides exhibited a high selectivity to dimethyl ether, so that a strong Lewis acidic character suggested for the catalysts was associated primarily with the Ti 4+ center. Both methanol conversion and dimethyl ether formation rates increased with increasing the zinc content added to the oxide support. Results demonstrate that cubic zinc titanate phases produce new Lewis acid sites having also a higher reactivity and that the nature of the catalytic surface transforms from Lewis acidic to basic characters due to the presence of reactive oxygen vacancies.

  18. Influence of phytase, EDTA, and polyphenols on zinc absorption in adults from porridges fortified with zinc sulfate or zinc oxide.

    PubMed

    Brnić, Marica; Wegmüller, Rita; Zeder, Christophe; Senti, Gabriela; Hurrell, Richard F

    2014-09-01

    Fortification of cereal staples with zinc is recommended to combat zinc deficiency. To optimize zinc absorption, strategies are needed to overcome the inhibitory effect of phytic acid (PA) and perhaps polyphenols. Five zinc absorption studies were conducted in young adults consuming maize or sorghum porridges fortified with 2 mg zinc as zinc sulfate (ZnSO4) or zinc oxide (ZnO) and containing combinations of PA or polyphenols as potential inhibitors and EDTA and phytase as potential enhancers. Fractional absorption of zinc (FAZ) was measured by using the double isotopic tracer ratio method. Adding phytase to the maize porridge immediately before consumption or using phytase for dephytinization during meal preparation both increased FAZ by >80% (both P < 0.001). Adding Na2EDTA at an EDTA:zinc molar ratio of 1:1 increased FAZ from maize porridge fortified with ZnSO4 by 30% (P = 0.01) but had no influence at higher EDTA ratios or on absorption from ZnO. FAZ was slightly higher from ZnSO4 than from ZnO (P = 0.02). Sorghum polyphenols had no effect on FAZ from dephytinized sorghum porridges but decreased FAZ by 20% from PA-rich sorghum porridges (P < 0.02). The combined inhibitory effect of polyphenols and PA was overcome by EDTA. In conclusion, ZnSO4 was better absorbed than ZnO, phytase used to degrade PA during digestion or during food preparation substantially increased zinc absorption from zinc-fortified cereals, EDTA at a 1:1 molar ratio modestly enhanced zinc absorption from ZnSO4-fortified cereals but not ZnO-fortified cereals, and sorghum polyphenols inhibited zinc absorption in the presence, but not absence, of PA. This trial was registered at clinicaltrials.gov as NCT01210794. © 2014 American Society for Nutrition.

  19. Toxicokinetics of zinc oxide nanoparticles in rats

    NASA Astrophysics Data System (ADS)

    Chung, H. E.; Yu, J.; Baek, M.; Lee, J. A.; Kim, M. S.; Kim, S. H.; Maeng, E. H.; Lee, J. K.; Jeong, J.; Choi, S. J.

    2013-04-01

    Zinc oxide (ZnO) nanoparticle have been extensively applied to diverse industrial fields because they possess UV light absorption, catalytic, semi-conducting, and magnetic characteristics as well as antimicrobial property. However, up to date, toxicological effects of ZnO nanoparticles in animal models have not been completely determined. Moreover, little information is available about kinetic behaviors of ZnO nanoparticles in vivo, which will be crucial to predict their potential chronic toxicity after long-term exposure. The aim of this study was, therefore, to evaluate the pharmacokinetics and toxicokinetics of ZnO nanoparticles after single-dose and repeated dose 90-day oral administration in male and female rats, respectively. The blood samples were collected following administration of three different doses (125, 250, and 500 mg/kg) and ZnO concentration was assessed by measuring zinc level with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The result showed that the plasma ZnO concentration significantly increased in a dose-dependent manner, but decreased within 24 h after single-dose oral administration up to 500 mg/kg, without any significant difference between gender. However, when repeated dose 90-day oral toxicity study was performed, the elevated plasma concentrations did not return to normal control levels in all the cases, indicating their toxicity potential. These findings suggest that repeated oral exposure to ZnO nanoparticles up to the dose of 125 mg/kg could accumulate in the systemic circulation, thereby implying that the NOAEL values could be less than 125 mg/kg via oral intake.

  20. Bioavailability of Zinc in Wistar Rats Fed with Rice Fortified with Zinc Oxide

    PubMed Central

    Della Lucia, Ceres Mattos; Santos, Laura Luiza Menezes; Rodrigues, Kellen Cristina da Cruz; Rodrigues, Vivian Cristina da Cruz; Martino, Hércia Stampini Duarte; Pinheiro Sant’Ana, Helena Maria

    2014-01-01

    The study of zinc bioavailability in foods is important because this mineral intake does not meet the recommended doses for some population groups. Also, the presence of dietary factors that reduce zinc absorption contributes to its deficiency. Rice fortified with micronutrients (Ultra Rice®) is a viable alternative for fortification since this cereal is already inserted into the population habit. The aim of this study was to evaluate the bioavailability of zinc (Zn) in rice fortified with zinc oxide. During 42 days, rats were divided into four groups and fed with diets containing two different sources of Zn (test diet: UR® fortified with zinc oxide, or control diet: zinc carbonate (ZnCO3)), supplying 50% or 100%, respectively, of the recommendations of this mineral for animals. Weight gain, food intake, feed efficiency ratio, weight, thickness and length of femur; retention of zinc, calcium (Ca) and magnesium (Mg) in the femur and the concentrations of Zn in femur, plasma and erythrocytes were evaluated. Control diet showed higher weight gain, feed efficiency ratio, retention of Zn and Zn concentration in the femur (p < 0.05). However, no differences were observed (p > 0.05) for dietary intake, length and thickness of the femur, erythrocyte and plasmatic Zn between groups. Although rice fortified with zinc oxide showed a lower bioavailability compared to ZnCO3, this food can be a viable alternative to be used as a vehicle for fortification. PMID:24932657

  1. Fate and Toxicity of Zinc Oxide Nanomaterial in Municipal Wastewaters.

    PubMed

    Smeraldi, Josh; Ganesh, Rajagopalan; Hosseini, Turaj; Khatib, Leila; Olson, Betty H; Rosso, Diego

    2017-09-01

      The production of zinc nanomaterial has increased significantly over the past several years and, as a result, nanoparticles have navigated their way into wastewater streams. The transportation and toxicity of zinc nanomaterial within the wastewater treatment processes is not well known. In this study, the zinc nanomaterial and its fate were characterized in an activated sludge treatment process. The tests performed included batch studies to evaluate abiotic and biotic removal, toxicity studies to evaluate inhibition to coliform and nitrifying bacteria, and bioreactor studies to evaluate impact on operating parameters. Stock solutions of zinc nanomaterial varied in size from 50 to 500 nm, but when added to an activated sludge solution, the nanoparticles agglomerated to larger sizes such that more than 60% of the zinc nanomaterial settled out of solution. However, when ionic zinc was added to activated sludge, more than 60% of the ionic zinc remained in suspension. It is likely that the ionic strength of the wastewater influenced the aggregation of the nanomaterial. Differences in the extent of removal between ionic and nano zinc species indicate that the mechanisms governing their removal are different. Toxicity analysis showed that zinc nanomaterial did not inhibit growth of coliform and ammonia oxidizing bacteria. However, ionic zinc inhibited the growth of both the coliform and ammonia oxidizing bacteria. Bioreactors were set up using activated sludge that was collected from a local treatment plant operating only in carbon oxidation mode. The treatment plant was operated at an SRT of 1.2 days and an MLSS of 650 mg/L. Several key parameters (COD, MLSS, pH) in the bioreactors were monitored through a 7-day incubation period, but showed no significant changes due to the addition of nano or ionic zinc. It is possible that the toxicity of zinc nanomaterial was not observed in these experiments because the nanomaterial agglomerated and settled out of solution.

  2. A review of zinc oxide mineral beneficiation using flotation method.

    PubMed

    Ejtemaei, Majid; Gharabaghi, Mahdi; Irannajad, Mehdi

    2014-04-01

    In recent years, extraction of zinc from low-grade mining tailings of oxidized zinc has been a matter of discussion. This is a material which can be processed by flotation and acid-leaching methods. Owing to the similarities in the physicochemical and surface chemistry of the constituent minerals, separation of zinc oxide minerals from their gangues by flotation is an extremely complex process. It appears that selective leaching is a promising method for the beneficiation of this type of ore. However, with the high consumption of leaching acid, the treatment of low-grade oxidized zinc ores by hydrometallurgical methods is expensive and complex. Hence, it is best to pre-concentrate low-grade oxidized zinc by flotation and then to employ hydrometallurgical methods. This paper presents a critical review on the zinc oxide mineral flotation technique. In this paper, the various flotation methods of zinc oxide minerals which have been proposed in the literature have been detailed with the aim of identifying the important factors involved in the flotation process. The various aspects of recovery of zinc from these minerals are also dealt with here. The literature indicates that the collector type, sulfidizing agent, pH regulator, depressants and dispersants types, temperature, solid pulp concentration, and desliming are important parameters in the process. The range and optimum values of these parameters, as also the adsorption mechanism, together with the resultant flotation of the zinc oxide minerals reported in the literature are summarized and highlighted in the paper. This review presents a comprehensive scientific guide to the effectiveness of flotation strategy.

  3. The kinetic of photoreactions in zinc oxide microrods

    NASA Astrophysics Data System (ADS)

    Fiedot, M.; Rac, O.; Suchorska-Woźniak, P.; Nawrot, W.; Teterycz, H.

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed.

  4. Zinc oxide nanoflowers make new blood vessels

    NASA Astrophysics Data System (ADS)

    Barui, Ayan Kumar; Veeriah, Vimal; Mukherjee, Sudip; Manna, Joydeb; Patel, Ajay Kumar; Patra, Sujata; Pal, Krishnendu; Murali, Shruthi; Rana, Rohit K.; Chatterjee, Suvro; Patra, Chitta Ranjan

    2012-11-01

    It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood vessels formation. Additionally, it helps to promote endothelial cell (EA.hy926 cells) migration in wound healing assays. Formation of reactive oxygen species (ROS), especially hydrogen peroxide (H2O2)--a redox signaling molecule, might be the plausible mechanism for nanoflower-based angiogenesis. Angiogenesis by nanoflowers may provide the basis for the future development of new alternative therapeutic treatment strategies for cardiovascular and ischemic diseases, where angiogenesis plays a significant role.It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood

  5. Nano-sized layered aluminium or zinc-manganese oxides as efficient water oxidizing catalysts.

    PubMed

    Najafpour, Mohammad Mahdi; Pashaei, Babak; Nayeri, Sara

    2012-06-21

    Nano-sized layered aluminium or zinc-manganese oxides were synthesized and characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction spectrometry, dynamic light scattering and atomic absorption spectroscopy. These oxides showed efficient water oxidizing activity in the presence of cerium(IV) ammonium nitrate as a non-oxo transfer oxidant. Amounts of dissolved manganese, zinc or aluminium, and water oxidation activities of these oxides were reported and compared with other manganese oxides. A mechanism for oxygen evolution and possible roles for zinc or aluminium ions are also proposed.

  6. Nonstoichiometric zinc oxide and indium-doped zinc oxide: Electrical conductivity and {sup 111}In-TDPAC studies

    SciTech Connect

    Wang, R.; Sleight, A.W.; Platzer, R.; Gardner, J.A.

    1996-02-15

    Indium-doped zinc oxide powders have been prepared which show room-temperature electrical conductivities as high as 30 {Omega}{sup {minus}1} cm{sup {minus}1}. The indium doping apparently occurs as Zn{sub 1-x}In{sub x}O,Zn{sub 1-y}In{sub y}O{sub 1+y/2}, or a combination of these. Optimum conductivity occurs for Zn{sub 1-x}In{sub x}O where the maximum value of x obtained was about 0.5 at%. The degrees of sample reduction were determined by iodimetric titration. Time differential perturbed angular correlation (TDPAC) spectroscopy on indium doped zinc oxide is consistent with indium substituting at normal zinc sites in the ZnO lattice. TDPAC studies on zinc oxide annealed under zinc vapors show a second environment for the {sup 111}In probe. In this case, there is an unusually high temperature dependence of the electric field gradient which may be caused by a nearby zinc interstitial. An important conclusion of this work is that zinc interstitials are not ionized and do not therefore contribute significantly to the increased conductivity of reduced zinc oxide.

  7. Delta-doped β-gallium oxide field-effect transistor

    NASA Astrophysics Data System (ADS)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Bajaj, Sanyam; Brenner, Mark; Rajan, Siddharth

    2017-05-01

    We report silicon delta doping in gallium oxide (β-Ga2O3) grown by plasma-assisted molecular beam epitaxy using a shutter pulsing technique. We describe the growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was adopted to realize thin (12 nm) low-resistance layers with a sheet resistance of 320 Ω/square (mobility of 83 cm2 V-1 s-1, integrated sheet charge of 2.4 × 1014 cm-2). A single delta-doped sheet of carriers was employed as a channel to realize a field-effect transistor with current I D,max = 236 mA/mm and transconductance g m = 26 mS/mm.

  8. Antibacterial Activity of Zinc Oxide-Coated Nanoporous Alumina

    DTIC Science & Technology

    2012-05-17

    Enterococcus faecalis, and Candida albicans. These results suggest that zinc oxide-coated nanoporous alumina membranes have activity against some Gram...Enterococcus faecalis, and Candida albicans. These results suggest that zinc oxide-coated nanoporous alumina membranes have activity...evaluated using several microorganisms found on the surface of the skin, including B. subtilis [26] (a Gram-positive bacterium), Candida albi- cans [27] (a

  9. Acetone sensor based on zinc oxide hexagonal tubes

    SciTech Connect

    Hastir, Anita Singh, Onkar Anand, Kanika Singh, Ravi Chand

    2014-04-24

    In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.

  10. Nano zinc oxide-sodium alginate antibacterial cellulose fibres.

    PubMed

    Varaprasad, Kokkarachedu; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Seo, Jongchul

    2016-01-01

    In the present study, antibacterial cellulose fibres were successfully fabricated by a simple and cost-effective procedure by utilizing nano zinc oxide. The possible nano zinc oxide was successfully synthesized by precipitation technique and then impregnated effectively over cellulose fibres through sodium alginate matrix. XRD analysis revealed the 'rod-like' shape alignment of zinc oxide with an interplanar d-spacing of 0.246nm corresponding to the (101) planes of the hexagonal wurtzite structure. TEM analysis confirmed the nano dimension of the synthesized zinc oxide nanoparticles. The presence of nano zinc oxide over cellulose fibres was evident from the SEM-EDS experiments. FTIR and TGA studies exhibited their effective bonding interaction. The tensile stress-strain curves data indicated the feasibility of the fabricated fibres for longer duration utility without any significant damage or breakage. The antibacterial studies against Escherichia coli revealed the excellent bacterial devastation property. Further, it was observed that when all the parameters remained constant, the variation of sodium alginate concentration showed impact in devastating the E. coli. In overall, the fabricated nano zinc oxide-sodium alginate cellulose fibres can be effectively utilized as antibacterial fibres for biomedical applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

  11. Methodology for assessing zinc bioavailability: efficacy estimates for zinc-methionine, zinc sulfate, and zinc oxide.

    PubMed

    Wedekind, K J; Hortin, A E; Baker, D H

    1992-01-01

    The bioavailability of zinc-methionine (ZnMET) was compared to that of feed-grade ZnSO4.H2O using three different diets: purified (crystalline amino acid [AA]), semipurified (soy isolate), and complex (corn-soybean [C-SBM]) diet. With the Zn-deficient purified or semipurified diet, weight gain and tibia Zn responded linearly to both ZnSO4.H2O and ZnMET supplementation. Common-intercept, multiple linear regression indicated differences in Zn bioavailability between ZnMET and ZnSO4.H2O for both diets as indicated by bone Zn. With the ZnSO4.H2O standard set at 100%, bioavailability of Zn from ZnMET was 117% (P less than .05) in the AA diet and 177% (P less than .01) in the soy isolate diet. The ZnMET was also compared to ZnSO4.H2O in a C-SBM diet containing 117 mg of Zn/kg. When high levels of Zn were added to this diet (0, 250, 500, and 750 mg/kg of supplemental Zn), consistent tissue Zn responses did not occur beyond the first increment. Addition of lower levels of supplemental Zn (0, 5, 10, 20, 30, 40 and 50 mg/kg) to a Zn-unsupplemented C-SBM basal diet (45 mg/kg of Zn), however, resulted in a broken-line, two-slope response in tibia Zn for both ZnMET and ZnSO4.H2O. Inflection points occurred at 60 and 54 mg of Zn/kg of diet for ZnSO4.H2O and ZnMET, respectively. The ratio of slopes (ZnMET:ZnSO4.H2O) below the inflection points was 206% (P less than .01), indicating that Zn was considerably more bioavailable in ZnMET than in ZnSO4.H2O for chicks consuming C-SBM diets. When feed-grade ZnO was compared to feed-grade ZnSO4.H2O in chicks consuming C-SBM diets, bone Zn slopes below the respective inflection points indicated that Zn was 61% bioavailable in ZnO relative to ZnSO4.H2O.

  12. Electrochemical synthesis and characterization of zinc carbonate and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pourmortazavi, Seied Mahdi; Marashianpour, Zahra; Karimi, Meisam Sadeghpour; Mohammad-Zadeh, Mohammad

    2015-11-01

    Zinc oxide and its precursor i.e., zinc carbonate is widely utilized in various fields of industry, especially in solar energy conversion, optical, and inorganic pigments. In this work, a facile and clean electrodeposition method was utilized for the synthesis of zinc carbonate nanoparticles. Also, zinc oxide nanoparticles were produced by calcination of the prepared zinc carbonate powder. Zinc carbonate nanoparticles with different sizes were electrodeposited by electrolysis of a zinc plate as anode in the solution of sodium carbonate. It was found that the particle size of zinc carbonate might be tuned by process parameters, i.e., electrolysis voltage, carbonate ion concentration, solvent composition and stirring rate of the electrolyte solution. An orthogonal array design was utilized to identify the optimum experimental conditions. The experimental results showed that the minimum size of the electrodeposited ZnCO3 particles is about 24 nm whereas the maximum particle size is around 40 nm. The TG-DSC studies of the nanoparticles indicated that the main thermal degradation of ZnCO3 occurs in two steps over the temperature ranges of 150-250 and 350-400 °C. The electrosynthesized ZnCO3 nanoparticles were calcined at the temperature of 600 °C to prepare ZnO nanoparticles. The prepared ZnCO3 and ZnO nanoparticles were characterized by SEM, X-ray diffraction (XRD), and FT-IR techniques.

  13. Biomedical Applications of Zinc Oxide Nanomaterials

    PubMed Central

    Zhang, Yin; Nayak, Tapas R.; Hong, Hao; Cai, Weibo

    2013-01-01

    Nanotechnology has witnessed tremendous advancement over the last several decades. Zinc oxide (ZnO), which can exhibit a wide variety of nanostructures, possesses unique semiconducting, optical, and piezoelectric properties hence has been investigated for a wide variety of applications. One of the most important features of ZnO nanomaterials is low toxicity and biodegradability. Zn2+ is an indispensable trace element for adults (~10 mg of Zn2+ per day is recommended) and it is involved in various aspects of metabolism. Chemically, the surface of ZnO is rich in -OH groups, which can be readily functionalized by various surface decorating molecules. In this review article, we summarized the current status of the use of ZnO nanomaterials for biomedical applications, such as biomedical imaging (which includes fluorescence, magnetic resonance, positron emission tomography, as well as dual-modality imaging), drug delivery, gene delivery, and biosensing of a wide array of molecules of interest. Research in biomedical applications of ZnO nanomaterials will continue to flourish over the next decade, and much research effort will be needed to develop biocompatible/biodegradable ZnO nanoplatforms for potential clinical translation. PMID:24206130

  14. Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperaturas

    NASA Astrophysics Data System (ADS)

    Catalán-Gómez, S.; Redondo-Cubero, A.; Palomares, F. J.; Nucciarelli, F.; Pau, J. L.

    2017-10-01

    The effect of the oxidation of gallium nanoparticles (Ga NPs) on their plasmonic properties is investigated. Discrete dipole approximation has been used to study the wavelength of the out-of-plane localized surface plasmon resonance in hemispherical Ga NPs, deposited on silicon substrates, with oxide shell (Ga2O3) of different thickness. Thermal oxidation treatments, varying temperature and time, were carried out in order to increase experimentally the Ga2O3 shell thickness in the NPs. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed, barely affecting the intensity of the plasmon resonance. A controllable increase of the Ga2O3 thickness as a consequence of the thermal annealing is achieved. In addition, simulations together with ellipsometry results have been used to determine the oxidation rate, whose kinetics is governed by a logarithmic dependence. These results support the tunable properties of the plasmon resonance wavelength in Ga NPs by thermal oxidation at low temperatures without significant reduction of the plasmon resonance intensity.

  15. Tunable plasmonic resonance of gallium nanoparticles by thermal oxidation at low temperaturas.

    PubMed

    Catalán-Gómez, S; Redondo-Cubero, A; Palomares, F J; Nucciarelli, F; Pau, J L

    2017-10-06

    The effect of the oxidation of gallium nanoparticles (Ga NPs) on their plasmonic properties is investigated. Discrete dipole approximation has been used to study the wavelength of the out-of-plane localized surface plasmon resonance in hemispherical Ga NPs, deposited on silicon substrates, with oxide shell (Ga2O3) of different thickness. Thermal oxidation treatments, varying temperature and time, were carried out in order to increase experimentally the Ga2O3 shell thickness in the NPs. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed, barely affecting the intensity of the plasmon resonance. A controllable increase of the Ga2O3 thickness as a consequence of the thermal annealing is achieved. In addition, simulations together with ellipsometry results have been used to determine the oxidation rate, whose kinetics is governed by a logarithmic dependence. These results support the tunable properties of the plasmon resonance wavelength in Ga NPs by thermal oxidation at low temperatures without significant reduction of the plasmon resonance intensity.

  16. Bioavailability of zinc in several sources of zinc oxide, zinc sulfate, and zinc metal.

    PubMed

    Edwards, H M; Baker, D H

    1999-10-01

    Three zinc depletion-repletion assays were carried out with chicks to determine Zn bioavailability in five sources of ZnO, three sources of ZnSO4.H2O, and two sources of Zn metal. A standard 23% CP corn-soybean meal diet was fed during the first 3 d posthatching, after which it was replaced with a Zn-deficient soy concentrate diet (13.5 mg Zn/kg) until d 7. On d 8 after an overnight period of feed withdrawal, chicks were fed for 12 d the Zn-deficient basal diet containing 0, 4.76, and 9.90 (Assay 1); 0, 5.06, or 10.12 (Assay 2); or 0, 4.73, or 9.13 (Assay 3) mg/kg supplemental Zn from analytical grade (AG) ZnSO4.7H2O (22.7% Zn) to generate a standard response curve. The AG and feed-grade (FG) Zn sources being evaluated were then provided at a level that would fall within the standard curve. Weight gain (Assays 1, 2, and 3) and total tibia Zn (Assay 1) responded linearly (P<.01) to Zn supplementation from ZnSO4.7H2O. Weight gain regressed on supplemental Zn intake gave standard-curve equations with fits (r2) ranging from .94 to .97. In Assay 1, regression of total tibia Zn (Y, in micrograms) on supplemental Zn intake (X, in milligrams/12 d) gave the equation Y = 13.2+6.74X (r2 = .90). Standard-curve methodology was used to estimate relative Zn bioavailability (RBV), with RBV of Zn in the ZnSO4.7H2O standard set at 100%. Four sources of FG ZnO were evaluated: Source 1 (78.1% Zn, hydrosulfide process, U.S.), Source 2 (74.1% Zn, Waelz process, Mexico), Source 3 (69.4% Zn, China), and Source 4 (78.0% Zn, French process, Mexico). Analytical-grade ZnO (80.3% Zn) was also evaluated. Feed-grade ZnO Sources 1 and 4 as well as AG ZnO produced average RBV values that were not different (P>.10) from the standard, but average RBV values for FG Source 2 and FG Source 3 were only 34 (P<.05) and 46% (P<.05), respectively. All sources of ZnSO4.H2O, which included two FG sources (source 1, 36.5% Zn; source 2, 35.3% Zn) and one food-grade source (36.5% Zn), were not different (P>.10

  17. Fabrication of zinc oxide-embedded kapok (Ceiba pentandra) paper

    NASA Astrophysics Data System (ADS)

    Mones, E. S.; Balela, M. D. L.; Futalan, C. C. M.; Manalo, R. D.; Herrera, M. U.

    2017-05-01

    Zinc oxide-embedded kapok (Ceiba pentandra) papers with antimicrobial property were fabricated. Fabrication of papers from kapok fibers was done using chloroform and sodium chlorite treatments. Meanwhile, embedding of zinc oxide particles on the fabricated kapok papers was done using an in situ method. The said method involved soaking the paper in zinc acetate and sodium hydroxide solutions. The method also involved heat treatment of the sample to fasten the formation of zinc oxide particles. X-ray diffraction (XRD) measurement shows the presence of synthesized ZnO particles on the cellulose fibers while scanning electron microscopy (SEM) revealed the flake-like morphology of the embedded ZnO particles. Agar diffusion test shows that the samples have higher antimicrobial effect against Staphylococcus aureus than Escherichia coli.

  18. [Zinc oxide-eugenol as dental material (1)].

    PubMed

    Brauer, G M

    1976-11-01

    Zinc oxide-eugenol cements are considerably better tolerated by tissue than other dental materials. As they alleviate pain and are bacteriostatic and antiseptic, they are well tolerated by patients. The cements are good insulators and possess better sealing properties than zinc phosphate cements. Because of their poor mechanic properties, the conventional zinc oxide-eugenol cements are mainly used as temporary fixing contents and filling materials, for gingival dressings and together with filling materials as impression materials. Recently, reinforced zinc oxide-eugenol cements and cements containing ethoxy benzoic acid (EBA) have been developed. These new cements have considerably better mechanic properties and are therefore used for cement bases, indirect capping, long-term temporary fillings and in selected cases as definite fixing cements.

  19. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  20. Thermodynamics and kinetics of extracting zinc from zinc oxide ore by the ammonium sulfate roasting method

    NASA Astrophysics Data System (ADS)

    Sun, Yi; Shen, Xiao-yi; Zhai, Yu-chun

    2015-05-01

    Thermodynamic analyses and kinetic studies were performed on zinc oxide ore treatment by (NH4)2SO4 roasting technology. The results show that it is theoretically feasible to realize a roasting reaction between the zinc oxide ore and (NH4)2SO4 in a temperature range of 573-723 K. The effects of reaction temperature and particle size on the extraction rate of zinc were also examined. It is found that a surface chemical reaction is the rate-controlling step in roasting kinetics. The calculated activation energy of this process is about 45.57 kJ/mol, and the kinetic model can be expressed as follows: 1 - (1 - α)1/3 = 30.85 exp(-45.57/ RT)· t. An extraction ratio of zinc as high as 92% could be achieved under the optimum conditions.

  1. Synthetic silver oxide and mercury-free zinc electrodes for silver-zinc reserve batteries

    NASA Astrophysics Data System (ADS)

    Smith, David F.; Gucinski, James A.

    Reserve activated silver oxide-zinc cells were constructed with synthetic silver oxide (Ag 2O) electrodes with Pb-treated zinc electrodes produced by a non-electrolytic process. The cells were tested before and after thermally accelerated aging. At discharge rates up to 80 mA cm -2, the discharge was limited by the Ag 2O electrode, with a coulombic efficiency between 89-99%. At higher rates, the cells are apparently zinc-limited. Test cells were artificially aged at 90°C for 19 h and discharged at 21°C at 80 mA cm -2. No capacity loss was measured, but a delayed activation rise time was noted (192 ms fresh vs. 567 ms aged). The delay is thought to be caused by zinc passivation due to the outgassing of cell materials.

  2. State-of-the-art technologies of gallium oxide power devices

    NASA Astrophysics Data System (ADS)

    Higashiwaki, Masataka; Kuramata, Akito; Murakami, Hisashi; Kumagai, Yoshinao

    2017-08-01

    Gallium oxide (Ga2 O3 ) has gained increased attention for power devices due to its superior material properties and the availability of economical device-quality native substrates. This review illustrates recent advances in Ga2 O3 device technologies, beginning with an overview of the social circumstances that motivate the development of new-generation switching devices. Following an introduction to the material properties of Ga2 O3 from the viewpoint of power electronics, growth technologies of Ga2 O3 bulk single crystals and epitaxial thin films are discussed. The fabrication and performance of state-of-the-art Ga2 O3 transistors and diodes are then described. We conclude by identifying the directions and challenges of Ga2 O3 power device development in the near future.

  3. Niobium-gallium oxide with a high concentration of Cr3+ ions: Photoluminescence and structural characteristics

    NASA Astrophysics Data System (ADS)

    Costa, G. K. B.; Pedro, S. S.; López, A.; Carvalho, I. C. S.; Cella, N.; Sosman, L. P.

    2016-10-01

    This work presents photoluminescence data for gallium-niobium oxide with chromium ion as an impurity. The samples were obtained by the solid-state method (SSM) and the wet-chemical method (WCM) and investigated by X-ray diffraction, photoluminescence, excitation, and photoacoustic and X-ray fluorescence. The color of the sample obtained by the SSM was pink, while the color of the sample prepared by the WCM was green. This dramatic difference was associated with Cr3+ concentration and with the neighborhood of the doping ions, obtained from crystallographic data, which is strongly dependent on the preparation method. The difference between the samples was also verified in the photoacoustic and excitation spectra, in which the energy bands were located at different energy levels; on the other hand, in the photoluminescence spectra, no band shift was observed. All spectra were assigned to chromium ions at nonequivalent octahedral sites.

  4. Optical Properties of Zinc Oxide Quantum Dots

    NASA Astrophysics Data System (ADS)

    Hsieh, Wen-Feng; Hsu, Hsu-Cheng; Liao, Wan-Jiun; Cheng, Hsin-Ming; Lin, Kuo-Feng; Hsu, Wei-Tze; Pan, Chin-Jiu

    Size-dependence of efficient UV photoluminescence (PL) and absorption spectra of various sizes of zinc oxide (ZnO) quantum dots (QDs) give evidence for the quantum confinement effect. Bandgap enlargement is in agreement with the theoretical calculation based on the effective mass model for the size of ZnO QDs being comparable to the Bohr radius of bulk exciton. By using the modified spatial correlation model to fit the measured Raman spectra, we reveal that the Raman spectral shift and asymmetry for E2(high) mode are caused by localization of optical phonons. Furthermore, we present temperature-dependent PL of different sizes of ZnO particles. The unobvious LO-phonon replicas of free exciton (FX) were observed when the ZnO particle sizes were under 12 nm in diameter. The increasing exciton energy (Eb) with the decreasing quantum dot size can be obtained from temperature-dependent PL. From the temperature-dependent change of FX emission energy, we deduce that the exciton-LO phonon coupling strength reduces as the particle size decreases. The reduced exciton Bohr radius aB with particle size obtained from Eb and PL spectrum confirms that the exciton becomes less polar in turn reducing the Fröhlich interaction and the exciton-LO phonon interaction is reduced with decreasing size of the ZnO QDs. In addition, the nearly unchanged spectral shape in power dependent PL of ZnO quantum dots reveals stable exciton states without formation of biexcitons and exciton-exciton cattering.

  5. Evaluation of Long-Term Toxicity of Oral Zinc Oxide Nanoparticles and Zinc Sulfate in Mice.

    PubMed

    Wang, Chao; Cheng, Kang; Zhou, Le; He, Jintian; Zheng, Xiaochuan; Zhang, Lili; Zhong, Xiang; Wang, Tian

    2017-08-01

    The toxicological effects of zinc oxide nanoparticles (nano-ZnOs) are related to their dissolution and interference with zinc ion homeostasis. High-soluble zinc sources may produce more severe and acute toxicity; however, the evaluation of potential toxicity of long-term exposure to nano-ZnOs and high-soluble sources of zinc remains obscure. This study aimed at evaluating effects of nano-ZnOs and zinc sulfate on development, serum and hematological parameters, and mineral concentrations in selected tissues and intestinal microbiota in mice via gastrointestinal administration for 7 weeks. Results indicated that 250 mg/kg nano-ZnOs reduced the body weight from weeks 8 to 11, increased serum glutamic-pyruvic transaminase activity, and increased the zinc concentrations of the serum, liver, and kidney while did not affect the relative organ weight, intestinal microbiota, and other mineral concentrations (Fe, Cu, and Mn) in the kidney, liver, and thigh muscle. Oral administration with 250 mg/kg zinc sulfate seemed to show more severe and acute toxicity since mice in zinc sulfate group exhibited reduced body weight from weeks 5 to 11, decreased relative pancreas weight, and increased serum glutamic-oxalacetic transaminase activity and intestinal enteric group.

  6. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  7. Zinc Oxide-From Synthesis to Application: A Review.

    PubMed

    Kołodziejczak-Radzimska, Agnieszka; Jesionowski, Teofil

    2014-04-09

    Zinc oxide can be called a multifunctional material thanks to its unique physical and chemical properties. The first part of this paper presents the most important methods of preparation of ZnO divided into metallurgical and chemical methods. The mechanochemical process, controlled precipitation, sol-gel method, solvothermal and hydrothermal method, method using emulsion and microemulsion enviroment and other methods of obtaining zinc oxide were classified as chemical methods. In the next part of this review, the modification methods of ZnO were characterized. The modification with organic (carboxylic acid, silanes) and inroganic (metal oxides) compounds, and polymer matrices were mainly described. Finally, we present possible applications in various branches of industry: rubber, pharmaceutical, cosmetics, textile, electronic and electrotechnology, photocatalysis were introduced. This review provides useful information for specialist dealings with zinc oxide.

  8. Growth and electrical properties of zinc oxide nanowires.

    PubMed

    Zhang, Zengxing; Zhao, Yuanchun; Sun, Lianfeng; Liu, Dongfang; Shen, Jun; Zhou, Weiya; Luo, Qiang; Jin, Aizi; Yang, Haifang; Gu, Changzhi; Xie, Sishen

    2009-02-01

    Zinc oxide nanowires were grown on molybdenum grids with a simple chemical vapor transport and deposition method through thermal evaporation of zinc powder at a temperature of 600 degrees C. These nanowires are 20-50 nm in diameter and over ten microns in length. High resolution transmission electron microscopy studies show that the as-grown nanowires are single crystal of wurtzite structure and grow along the (0001) direction. The growth process was explained with a vapor-solid mechanism under zinc-rich conditions. We further patterned electrodes on individual ZnO nanowires by e-beam lithography and studied thier electrical properties.

  9. Defects and ferromagnetism in transition metal doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Thapa, Sunil

    Transition metal doped zinc oxide has been studied recently due to its potential application in spintronic devices. The magnetic semiconductor, often called Diluted Magnetic Semiconductors (DMS), has the ability to incorporate both charge and spin into a single formalism. Despite a large number of studies on ferromagnetism in ZnO based DMS and the realization of its room temperature ferromagnetism, there is still a debate about the origin of the ferromagnetism. In this work, the synthesis and characterization of transition metal doped zinc oxide have been carried out. The sol-gel method was used to synthesize thin films, and they were subsequently annealed in air. Characterization of doped zinc oxide films was carried out using the UV-visible range spectrometer, scanning electron microscopy, superconducting quantum interference device (SQUID), x-ray diffraction(XRD) and positron annihilation spectroscopy. Hysteresis loops were obtained for copper and manganese doped zinc oxide, but a reversed hysteresis loop was observed for 2% Al 3% Co doped zinc oxide. The reversed hysteresis loop has been explained using a two-layer model.

  10. Crystal Structure Characterization of Thin Layer Zinc Oxide

    NASA Astrophysics Data System (ADS)

    Doyan, Aris; Susilawati; Azizatul Fitri, Siti; Ahzan, Sukainil

    2017-05-01

    In this research the characterization of the crystal structure of a thin layer of ZnO (zinc oxide) were synthesized by sol - gel method and spin coating deposited on a glass substrate. The samples were divided into three sol concentrations of 0.1, 0.3, 0.5 Molar and two deposition temperature is 350 °C, and 550 °C. UV-Vis. spectrophotometer results showed that in the spectrum of visible light (wavelength range 300-800 nm) has a transmittance value of which increases with increasing concentration and temperature deposition of zinc oxide, otherwise the value of the absorption and the band gap energy decreases with the addition of concentration and deposition temperature. The transmittances value of the highest and lowest absorption was 93.5% and 0.03 is at a concentration of 0.1 M and zinc oxide deposition temperature of 550 °C, with a value of band gap energy of 2.98 eV. The XRD results showed that the zinc oxide crystal orientation in the field of 013 with a crystal grain size 14.4472 nm. SEM results showed the surface morphology of zinc oxide such as rod-like.

  11. Plasma in-liquid method for reduction of zinc oxide in zinc nanoparticle synthesis

    NASA Astrophysics Data System (ADS)

    Amaliyah, Novriany; Mukasa, Shinobu; Nomura, Shinfuku; Toyota, Hiromichi; Kitamae, Tomohide

    2015-02-01

    Metal air-batteries with high-energy density are expected to be increasingly applied in electric vehicles. This will require a method of recycling air batteries, and reduction of metal oxide by generating plasma in liquid has been proposed as a possible method. Microwave-induced plasma is generated in ethanol as a reducing agent in which zinc oxide is dispersed. Analysis by energy-dispersive x-ray spectrometry (EDS) and x-ray diffraction (XRD) reveals the reduction of zinc oxide. According to images by transmission electron microscopy (TEM), cubic and hexagonal metallic zinc particles are formed in sizes of 30 to 200 nm. Additionally, spherical fiber flocculates approximately 180 nm in diameter are present.

  12. Gallium scan

    MedlinePlus

    ... material called gallium and is a type of nuclear medicine exam. A related test is gallium scan ... Brown ML, Forstrom LA, et al. Society of nuclear medicine procedure guideline for gallium scintigraphy in inflammation. ...

  13. Combined administration of oxalic acid, succimer and its analogue for the reversal of gallium arsenide-induced oxidative stress in rats.

    PubMed

    Flora, Swaran J S; Kannan, Gurusamy M; Pant, Bhagwat P; Jaiswal, Devendra K

    2002-06-01

    Gallium arsenide (GaAs), a group III-VA intermetallic semiconductor, possesses superior electronic and optical properties and has a wide application in the electronics industry. Exposure to GaAs in the semiconductor industry is a potential occupational hazard because cleaning and slicing GaAs ingots to yield the desired wafer could generate GaAs particles. The ability of GaAs to induce oxidative stress has not yet been reported. The present study reports the role of oxidative stress in GaAs-induced haematological and liver disorders and its possible reversal overturn by administration of meso-2,3-dimercaptosuccinic acid (DMSA) and one of its analogue, monoisoamyl DMSA (MiADMSA), either individually or in combination with oxalic acid. While DMSA and MiADMSA are potential arsenic chelators, oxalic acid is reported to be an effective gallium chelator. Male rats were exposed to 10 mg/kg GaAs orally, 5 days a week for 8 weeks. GaAs exposure was then stopped and rats were given a 0.5 mmol/kg dose of succimers (DMSA or MiADMSA), oxalic acid or a combination of the two, intraperitoneally once daily for 5 consecutive days. We found a significant fall in blood delta-aminolevulinic acid dehydratase (ALAD) activity and blood glutathione (GSH) level, and an increased urinary excretion of delta-aminolevulinic acid (ALA) and an increased malondialdehyde (MDA) level in erythrocytes of rats exposed to GaAs. Hepatic GSH levels decreased, whereas there was an increase in GSSG and MDA levels. The results suggest a role of oxidative stress in GaAs-induced haematological and hepatic damage. Administration of DMSA and MiADMSA produced effective recovery in most of the above variables. However, a greater effectiveness of the chelation treatment (i.e. removal of both gallium and arsenic from body organs) could be achieved by combined administration of succimer (DMSA) with oxalic acid since, after MiADMSA administration, a marked loss of essential metals (copper and zinc) is of concern.

  14. Fundamentals of zinc oxide as a semiconductor

    NASA Astrophysics Data System (ADS)

    Janotti, Anderson; Van de Walle, Chris G.

    2009-12-01

    In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes

  15. Modeling nucleation and growth of zinc oxide during discharge of primary zinc-air batteries

    NASA Astrophysics Data System (ADS)

    Stamm, Johannes; Varzi, Alberto; Latz, Arnulf; Horstmann, Birger

    2017-08-01

    Metal-air batteries are among the most promising next-generation energy storage devices. Relying on abundant materials and offering high energy densities, potential applications lie in the fields of electro-mobility, portable electronics, and stationary grid applications. Now, research on secondary zinc-air batteries is revived, which are commercialized as primary hearing aid batteries. One of the main obstacles for making zinc-air batteries rechargeable is their poor lifetime due to the degradation of alkaline electrolyte in contact with atmospheric carbon dioxide. In this article, we present a continuum theory of a commercial Varta PowerOne button cell. Our model contains dissolution of zinc and nucleation and growth of zinc oxide in the anode, thermodynamically consistent electrolyte transport in porous media, and multi-phase coexistance in the gas diffusion electrode. We perform electrochemical measurements and validate our model. Excellent agreement between theory and experiment is found and novel insights into the role of zinc oxide nucleation and growth and carbon dioxide dissolution for discharge and lifetime is presented. We demonstrate the implications of our work for the development of rechargeable zinc-air batteries.

  16. Zinc Oxide Nanoparticles for Revolutionizing Agriculture: Synthesis and Applications

    PubMed Central

    Sabir, Sidra; Arshad, Muhammad

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  17. Crystalline state and acoustic properties of zinc oxide films

    SciTech Connect

    Kal'naya, G.I.; Pryadko, I.F.; Yarovoi, Yu.A.

    1988-08-01

    We study the effect of the crystalline state of zinc oxide films, prepared by magnetron sputtering, on the efficiency of SAW transducers based on the layered system textured ZnO film-interdigital transducer (IDT)-fused quartz substrate. The crystalline perfection of the ZnO films was studied by the x-ray method using a DRON-2.0 diffractometer. The acoustic properties of the layered system fused quartz substrate-IDT-zinc oxide film were evaluated based on the squared electromechanical coupling constant K/sup 2/ for strip filters. It was found that K/sup 2/ depends on the magnitude of the mechanical stresses. When zinc oxide films are deposited by the method of magnetron deposition on fused quartz substrates, depending on the process conditions limitations can arise on the rate of deposition owing to mechanical stresses, which significantly degrade the efficiency of SAW transducers based on them, in the ZnO films.

  18. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-10-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2-4 nm) nanoparticles.

  19. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach

    NASA Astrophysics Data System (ADS)

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; van Dorsselaer, Alain; Rabilloud, Thierry

    2014-05-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations.Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate

  20. Gallium and gallium arsenide

    SciTech Connect

    Kramer, D.

    1988-01-01

    As part of the Nation's growing concern with the competitiveness of U.S. firms in the world economy, especially with respect to advanced materials, the Bureau of Mines assessed the actual and potential recovery and manufacturing capabilities for gallium and gallium arsenide (GaAs). GaAs has advanced from a laboratory curiosity to a material with important high-tech applications within only the last few years, and although protected North American gallium supplies are currently considered adequate, consumption could grow to the point that this assessment would need reevaluation.

  1. High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer.

    PubMed

    Lee, Ming-Lun; Mue, T S; Huang, F W; Yang, J H; Sheu, J K

    2011-06-20

    In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

  2. Hydrogen Reduction of Zinc and Iron Oxides Containing Mixtures

    NASA Astrophysics Data System (ADS)

    de Siqueira, Rogério Navarro C.; de Albuquerque Brocchi, Eduardo; de Oliveira, Pamela Fernandes; Motta, Marcelo Senna

    2013-10-01

    Zinc is a metal of significant technological importance and its production from secondary sources has motivated the development of alternative processes, such as the chemical treatment of electrical arc furnace (EAF) dust. Currently, the extraction of zinc from the mentioned residue using a carbon-containing reducing agent is in the process of being established commercially and technically. In the current study, the possibility of reducing zinc from an EAF dust sample through a H2 constant flux in a horizontal oven is studied. The reduction of a synthetic oxide mixture of analogous composition is also investigated. The results indicated that the reduction process is thermodynamically viable for temperatures higher than 1123 K (850 °C), and all zinc metal produced is transferred to the gas stream, enabling its complete separation from iron. The same reaction in the presence of zinc crystals was considered for synthesizing FeZn alloys. However, for the experimental conditions employed, although ZnO reduction was indeed thermodynamically hindered because of the presence of zinc crystals (the metal's partial pressure was enhanced), the zinc metal's escape within the gaseous phase could not be effectively avoided.

  3. Selective Sensitization of Zinc Finger Protein Oxidation by Reactive Oxygen Species through Arsenic Binding*

    PubMed Central

    Zhou, Xixi; Cooper, Karen L.; Sun, Xi; Liu, Ke J.; Hudson, Laurie G.

    2015-01-01

    Cysteine oxidation induced by reactive oxygen species (ROS) on redox-sensitive targets such as zinc finger proteins plays a critical role in redox signaling and subsequent biological outcomes. We found that arsenic exposure led to oxidation of certain zinc finger proteins based on arsenic interaction with zinc finger motifs. Analysis of zinc finger proteins isolated from arsenic-exposed cells and zinc finger peptides by mass spectrometry demonstrated preferential oxidation of C3H1 and C4 zinc finger configurations. C2H2 zinc finger proteins that do not bind arsenic were not oxidized by arsenic-generated ROS in the cellular environment. The findings suggest that selectivity in arsenic binding to zinc fingers with three or more cysteines defines the target proteins for oxidation by ROS. This represents a novel mechanism of selective protein oxidation and demonstrates how an environmental factor may sensitize certain target proteins for oxidation, thus altering the oxidation profile and redox regulation. PMID:26063799

  4. Size effects in the thermal conductivity of gallium oxide (β-Ga2O3) films grown via open-atmosphere annealing of gallium nitride

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester J.; Creange, Nicole C.; Sun, Kai; Giri, Ashutosh; Donovan, Brian F.; Constantin, Costel; Hopkins, Patrick E.

    2015-02-01

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga2O3 grown via this technique (8.8 ± 3.4 W m-1 K-1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga2O3 film resulting from phonon scattering at the β-Ga2O3/GaN interface and thermal transport across the β-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  5. Roles of zinc and copper in modulating the oxidative refolding of bovine copper, zinc superoxide dismutase.

    PubMed

    Li, Hong-Tao; Jiao, Ming; Chen, Jie; Liang, Yi

    2010-03-15

    The structural integrity of the ubiquitous enzyme copper, zinc superoxide dismutase (SOD1) depends critically on the correct coordination of zinc and copper. We investigate here the roles of the stoichiometric zinc and copper ions in modulating the oxidative refolding of reduced, denatured bovine erythrocyte SOD1 at physiological pH and room temperature. Fluorescence experiment results showed that the oxidative refolding of the demetalated SOD1 (apo-SOD1) is biphasic, and the addition of stoichiometric Zn(2+) into the refolding buffer remarkably accelerates both the fast phase and the slow phase of the oxidative refolding, compared with without Zn(2+). Aggregation of apo-SOD1 in the presence of stoichiometric Zn(2+) is remarkably slower than that in the absence of Zn(2+). In contrast, the effects of stoichiometric Cu(2+) on both the rates of the oxidative refolding and the aggregation of apo-SOD1 are not remarkable. Experiments of resistance to proteinase K showed that apo-SOD1 forms a conformation with low-level proteinase K resistance during refolding and stoichiometric Cu(2+) has no obvious effect on the resistance to proteinase K. In contrast, when the refolding buffer contains stoichiometric zinc, SOD1 forms a compact conformation with high-level proteinase K resistance during refolding. Our data here demonstrated that stoichiometric zinc plays an important role in the oxidative refolding of low micromolar bovine SOD1 by accelerating the oxidative refolding, suppressing the aggregation during refolding, and helping the protein to form a compact conformation with high protease resistance activity.

  6. Synthesis of substituted β-diketiminate gallium hydrides via oxidative addition of H-O bonds.

    PubMed

    Herappe-Mejía, Eduardo; Trujillo-Hernández, Karla; Carlos Garduño-Jiménez, Juan; Cortés-Guzmán, Fernando; Martínez-Otero, Diego; Jancik, Vojtech

    2015-10-14

    Oxidative addition of LGa into the OH bonds from HCCCH2OH, Ph2Si(OH)2, (nBuO)2P(O)(OH) and 4-MeC6H4S(O)2(OH) results in the formation of four compounds of the general formula LGa(H)(O-X). The correlation of the Ga-O bond length and the strength of the Ga-H bond depending on the acidity of the OH group in the starting materials has been demonstrated. The molecular structures of all four compounds have been determined using single crystal X-ray diffraction experiments. DFT calculations were performed on the reacting complex of LGa with propargyl alcohol and show an OHGa hydrogen bond as the first interaction between the reagents. This reacting complex changes into a D-A complex where the oxygen atom of the propargyl alcohol coordinates to the gallium atom and in a concerted reaction the oxidative addition product is formed.

  7. Microfluorescence analysis of nanostructuring inhomogeneity in optical fibers with embedded gallium oxide nanocrystals.

    PubMed

    Mashinsky, Valery M; Karatun, Nikita M; Bogatyrev, Vladimir A; Sigaev, Vladimir N; Golubev, Nikita V; Ignat'eva, Elena S; Lorenzi, Roberto; Mozzati, Maria Cristina; Paleari, Alberto; Dianov, Evgeny M

    2012-04-01

    A spectroscopic protocol is proposed to implement confocal microfluorescence imaging to the analysis of microinhomogeneity in the nanocrystallization of the core of fibers belonging to a new kind of broadband fiber amplifier based on glass with embedded nanocrystals. Nanocrystallization, crucial for achieving an adequate light emission efficiency of transition metal ions in these materials, has to be as homogeneous as possible in the fiber to assure optical amplification. This requirement calls for a sensitive method for monitoring nanostructuring in oxide glasses. Here we show that mapping microfluorescence excited at 633 nm by a He-Ne laser may give a useful tool in this regard, thanks to quasi-resonant excitation of coordination defects typical of germanosilicate materials, such as nonbridging oxygens and charged Ge-O-Ge sites, whose fluorescence are shown to undergo spectral modifications when nanocrystals form into the glass. The method has been positively checked on prototypes of optical fibers--preventively characterized by means of scanning electron microscopy and energy dispersive spectroscopy--fabricated from preforms of Ni-doped Li₂O-Na₂O-Sb₂O₃-Ga₂O₃-GeO₂-SiO₂ glass in silica cladding and subjected to heat treatment to activate gallium oxide nanocrystal growth. The method indeed enables not only the mapping of the crystallization degree but also the identification of drawing-induced defects in the fiber cladding.

  8. Effect of modifying agents on the hydrophobicity and yield of zinc borate synthesized by zinc oxide

    NASA Astrophysics Data System (ADS)

    Acarali, Nil Baran; Bardakci, Melek; Tugrul, Nurcan; Derun, Emek Moroydor; Piskin, Sabriye

    2013-06-01

    The aim of this study was to synthesize zinc borate using zinc oxide, reference boric acid, and reference zinc borate (reference ZB) as the seed, and to investigate the effects of modifying agents and reaction parameters on the hydrophobicity and yield, respectively. The reaction parameters include reaction time (1-5 h), reactant ratio (H3BO3/ZnO by mass: 2-5), seed ratio (seed crystal/(H3BO3+ZnO) by mass: 0-2wt%), reaction temperature (50-120°C), cooling temperature (10-80°C), and stirring rate (400-700 r/min); the modifying agents involve propylene glycol (PG, 0-6wt%), kerosene (1wt%-6wt%), and oleic acid (OA, 1wt%-6wt%) with solvents (isopropyl alcohol (IPA), ethanol, and methanol). The results of reaction yield obtained from either magnetically or mechanically stirred systems were compared. Zinc borate produced was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and contact angle tests to identify the hydrophobicity. In conclusion, zinc borate is synthesized successfully under the optimized reaction conditions, and the different modifying agents with various solvents affect the hydrophobicity of zinc borate.

  9. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

    NASA Astrophysics Data System (ADS)

    Ramana, C. V.; Rubio, E. J.; Barraza, C. D.; Miranda Gallardo, A.; McPeak, Samantha; Kotru, Sushma; Grant, J. T.

    2014-01-01

    Gallium oxide (Ga2O3) thin films were made by sputter deposition employing a Ga2O3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (Ts), from 25 to 600 °C. The effect of Ts on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p3/2 and Ga 2p1/2 peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga3+) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ˜ 531 eV, which is also characteristic of Ga-O bonds in the Ga2O3 phase. The granular morphology of the nanocrystalline Ga2O3 films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing Ts. The SE analyses indicate that the index of refraction (n) of Ga2O3 films increases with increasing Ts due to improved structural quality and packing density of the films. The n(λ) of all the Ga2O3 films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (˜200 Ω-cm) for amorphous Ga2O3 films grown at Ts = RT-300 °C and decreased to ˜1 Ω-cm for nanocrystalline Ga2O3 films grown at Ts ≥ 500-600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga2O3 films is derived.

  10. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

    SciTech Connect

    Ramana, C. V. Rubio, E. J.; Barraza, C. D.; Miranda Gallardo, A.; McPeak, Samantha; Kotru, Sushma; Grant, J. T.

    2014-01-28

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were made by sputter deposition employing a Ga{sub 2}O{sub 3} ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T{sub s}), from 25 to 600 °C. The effect of T{sub s} on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p{sub 3/2} and Ga 2p{sub 1/2} peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga{sup 3+}) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga{sub 2}O{sub 3} phase. The granular morphology of the nanocrystalline Ga{sub 2}O{sub 3} films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T{sub s}. The SE analyses indicate that the index of refraction (n) of Ga{sub 2}O{sub 3} films increases with increasing T{sub s} due to improved structural quality and packing density of the films. The n(λ) of all the Ga{sub 2}O{sub 3} films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga{sub 2}O{sub 3} films grown at T{sub s} = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga{sub 2}O{sub 3} films grown at T{sub s} ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga{sub 2}O{sub 3} films is derived.

  11. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  12. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1991-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  13. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1991-11-05

    Disclosed are a new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  14. Application of zinc oxide quantum dots in food safety

    USDA-ARS?s Scientific Manuscript database

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  15. Investigation of Optical Properties of Zinc Oxide Photodetector

    NASA Astrophysics Data System (ADS)

    Chism, Tyler

    UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today's photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this research a metal-semiconductor-metal UV photodetector has been fabricated by using a quartz substrate on top of which was deposited micropatterned gold in an interdigitated electrode design. On this, sparsely coated zinc oxide nano trees were hydrothermally grown. The UV photodetection device showed promise for detection applications, especially because zinc oxide is also very thermally stable, a quality which is highly sought after in today's UV photodetectors. Furthermore, the newly synthesized photodetector was used to investigate optical properties and how they respond to different stimuli. It was discovered that the photons transmitted through the sparsely coated zinc oxide nano trees decreased as the voltage across the device increased. This research is aimed at better understanding photons interaction with matter and also to open the door for new devices with tunable optical properties such as transmission.

  16. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics

    NASA Astrophysics Data System (ADS)

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V. Ramgopal; Garnier, Gil

    2017-03-01

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept.

  17. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics

    PubMed Central

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V. Ramgopal; Garnier, Gil

    2017-01-01

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept. PMID:28252113

  18. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics.

    PubMed

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V Ramgopal; Garnier, Gil

    2017-03-02

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept.

  19. Interfacial electron transfer dynamics of photosensitized zinc oxide nanoclusters

    SciTech Connect

    Murakoshi, Kei; Yanagida, Shozo; Capel, M.

    1997-06-01

    The authors have prepared and characterized photosensitized zinc oxide (ZnO) nanoclusters, dispersed in methanol, using carboxylated coumarin dyes for surface adsorption. Femtosecond time-resolved emission spectroscopy allows the authors to measure the photo-induced charge carrier injection rate constant from the adsorbed photosensitizer to the n-type semiconductor nanocluster. These results are compared with other photosensitized semiconductors.

  20. Collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors using oxidized aluminum arsenide for current confinement

    NASA Astrophysics Data System (ADS)

    Massengale, Alan Ross

    1998-12-01

    The discovery in 1990 that the wet thermal oxidation of AlAs can create a stable native oxide has added a new constituent, AlAs-oxide, to the AlGaAs/GaAs materials system. Native oxides of high Al mole-fraction AlGaAs are being used to confine electrical and/or optical fields in many types of electronic and optoelectronic structures with very promising results. Among these devices are collector-up heterojunction bipolar transistors (HBTs). Collector-up HBTs offer a means to reduce base-collector capacitance relative to their emitter-up counterparts, and thus to improve device performance. A novel method for fabricating collector-up AlGaAs/GaAs HBTs where an AlAs layer is inserted into the emitter layer and is oxidized in water vapor at 450sp°C has been developed. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. Compared to previous methods of fabricating these devices, the process of converting AlAs into an insulator requires only one growth, and does not suffer from implant damage in the base. Because the lateral oxidation of AlAs is a process that proceeds at rates of microns per minute, one of the major challenges facing its implementation is the ability to accurately control the oxidation rate over the wafer, and from one wafer to the next. In the course of work on the oxidation of AlAs, a method to lithographically form lateral oxidation stop layers has been achieved. This technique utilizes impurity induced layer disordering (IILD) in heavily Si-doped buried planes, combined with selective surface patterning and thermal annealing, to create a lateral variation in the Al mole-fraction of the layer to be oxidized.

  1. Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

    SciTech Connect

    Rubio, E. J.; Mates, T. E.; Manandhar, S.; Nandasiri, M.; Shutthanandan, V.; Ramana, C. V.

    2016-12-01

    Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films also crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.

  2. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  3. Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

    SciTech Connect

    Ning, J.Q.; Xu, S.J.; Wang, P.W.; Song, Y.P.; Yu, D.P.; Shan, Y.Y.; Lee, S.T.; Yang, H.

    2012-11-15

    Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.

  4. Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sun, Jian-xu; Mi, Wei; Zhang, De-shuang; Yang, Zheng-chun; Zhang, Kai-liang; Han, Ye-mei; Yuan, Yu-jie; Zhao, Jin-shi; Li, Bo

    2017-07-01

    Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure ( β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3 (2̅01) ǁ Al2O3 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices.

  5. Kinetics of the dissolution of zinc sulfide in an oxidizing slag

    NASA Astrophysics Data System (ADS)

    Gupta, Suresh K.

    1990-10-01

    A new concept has been developed for the production of zinc from zinc and complex zinc concentrates. It is a two-stage process involving oxidation of zinc sulfide to oxide and dissolution into slag and the fuming of zinc from the slag by injecting carbonaceous materials into it to produce zinc vapors which can be subsequently condensed in a lead-splash condenser such as those used in the Imperial Smelting Process (ISP). In this paper, the effects of the quantity of air, temperature, and concentrate feed rate have been discussed on the production of zinc-rich slag, which is the first stage of the proposed process.

  6. Some Aspects of Photoconductivity in Zinc Oxide

    DTIC Science & Technology

    1952-01-25

    the room to liquid air temperature range* >• ULfoattfy-* niWi H a .te^u*^•«-’""’^’’’^^ id Si £3* II» y^otog.ongujgjbl^’ty. of Zinc-Oxidei...varlpus insulators, evg.. HaCI, •Ü-. &i KOlj AgCI, and semiconductors, e,g«, CuO> Si * Ge, PbS, hus been furthered by the study of tto phoboconductive...dlseusoiuju uy § Rose20 on the effects of trapping and small capture cross section in hindering ’-n sß p;?-SB (, SI ’ recombination, and

  7. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  8. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  9. Optical and field emission properties of Zinc Oxide nanostructures.

    PubMed

    Pan, Hui; Zhu, Yanwu; Ni, Zhenhua; Sun, Han; Poh, Cheekok; Lim, Sanhua; Sow, Chornghaur; Shen, Zexiang; Feng, Yuanping; Lin, Jianyi

    2005-10-01

    Zinc Oxide (ZnO) nano-pikes were produced by oxidative evaporation and condensation of Zn powders. The crystalline structure and optical properties of the ZnO nanostructures (ZnONs) greatly depend on the deposition position of the ZnONs. TEM and XRD indicated that the ZnONs close to the reactor center, ZnON-A, has better crystalline structure than the ZnONs away from the center, ZnON-B. ZnON-A showed the PL and Raman spectra characteristic of perfect ZnO crystals, whereas ZnON-B produced very strong green emission band at 500 nm in the photoluminescence (PL) spectrum and very strong Raman scattering peak at 560 cm(-1), both related to the oxygen deficiency due to insufficient oxidation of zinc vapor. ZnON-B exhibited better field emission properties with higher emission current density and lower turn-on field than ZnON-A.

  10. Gallium chloride effects on neonatal rat heart cells in culture, in standard and oxidative conditions.

    PubMed

    Leperre, A; Millart, H; Prévost, A; Kantelip, J P; Lamiable, D; Collery, P

    1994-01-01

    The effects of gallium chloride (GaCl3) at 7.17, 28.68 and 114.7 microns (0.5, 2 and 8 mg/l of Ga3+) were checked in cardiac cells derived from 2-4 day-old newborn rats, cultured for 72 h in Eagle's minimum essential medium (MEM), enriched with 10% foetal calf serum (v/v) and 2 mM of glutamine at 37 degrees C, with 95% air plus 5% CO2. After 3 hours of standard culture conditions (MEM with glucose 5 mM), Ga treatment induced an increase of glycogen stores without any influence on ATP, ADP, and AMP concentrations. A slight and transient decrease in the beat rate was noted after 15 min of exposure to GaCl3 at all concentrations, whereas there was no difference in the beat rate nor in the cell contraction amplitude after 3 hours of exposure. After 1.5 h in conditions of oxidation (Tyrode solution without glucose, FeCl2 20 microM, ascorbic acid 0.2 mM), GaCl3 at 8 mg/l decreased the malondialdehyde (MDA) production as assessed by the decrease of intracellular concentrations and the decrease of its release in the supernatant. The decreased MDA production following oxidative stress, the increase in glycogen stores in normal oxygen concentrations, as well as the maintenance of ATP concentrations and the lack of any chronotropic effect induced by GaCl3 suggests a protective rather than a deleterious cardiac effect.

  11. Zinc oxide's hierarchical nanostructure and its photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Kanjwal, Muzafar A.; Sheikh, Faheem A.; Barakat, Nasser A. M.; Li, Xiaoqiang; Kim, Hak Yong; Chronakis, Ioannis S.

    2012-02-01

    In this study, a new hierarchical nanostructure that consists of zinc oxide (ZnO) was produced by the electrospinning process followed by a hydrothermal technique. First, electrospinning of a colloidal solution that consisted of zinc nanoparticles, zinc acetate dihydrate and poly(vinyl alcohol) was performed to produce polymeric nanofibers embedding solid nanoparticles. Calcination of the obtained electrospun nanofiber mats in air at 500 °C for 90 min produced pure ZnO nanofibers with rough surfaces. The rough surface strongly enhanced outgrowing of ZnO nanobranches when a specific hydrothermal technique was used. Methylene blue dihydrate was used to check the photocatalytic ability of the produced nanostructures. The results indicated that the hierarchical nanostructure had a better performance than the other form.

  12. Method of choice for the fabrication of high-quality β-gallium oxide-based Schottky diodes

    NASA Astrophysics Data System (ADS)

    Müller, Stefan; von Wenckstern, Holger; Schmidt, Florian; Splith, Daniel; Frenzel, Heiko; Grundmann, Marius

    2017-06-01

    Electrical properties of differently fabricated Pt(O x ) Schottky contacts on heteroepitaxial grown β-gallium oxide thin films have been investigated at room temperature using current-voltage measurements. A partial oxidation of contact metal leads to a significant increase of the homogeneous barrier by 0.3-0.4 eV compared to their metallic counterparts. The properties of the Schottky contacts are highly dependent on the kinetic energy of the incident metal (oxide) particles during contact deposition. Large kinetic energies cause a significant decrease of the effective barrier height, which is probably connected to the additional generation of defects close to the metal/semiconductor interface. Using PtO x as contact material, the additional oxygen at the interface heals defects generated during the formation of the Schottky barrier. Long-throw sputtering combines a low kinetic energy of the metal particles and the possibility of fabricating partially oxidized PtO x as contact material. Therefore, this technique is most suitable for the fabrication of highly rectifying gallium oxide based Schottky contacts. On heteroepitaxial thin film samples on c-plane sapphire the rectification is larger than 106 at +/- 2 {{V}}, the ideality factor is below 1.5 and the effective barrier height above 1.3 {eV}.

  13. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny Xiao-zhe

    2003-01-01

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO2 plasma or by N+ implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zni, a native shallow donor. In NO2-grown ZnO films, the n-type conductivity is attributed to (N2)O, a shallow double donor. In NO2-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N2O and N2. Upon annealing, N2O decomposes into N2 and O2. In furnace-annealed samples N2 redistributes diffusively and forms gaseous N2 bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N+ implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N2)O and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  14. Zinc oxide films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Maciąg, Andrzej; Sagan, Piotr; Kuźma, Marian; Popovych, Volodymyr

    2016-12-01

    In this work we developed and tested spray pyrolysis system for layers deposition. In the system we have used ultrasonic apparatus (nebulizator) as a sprayer. A zinc nitrate aqueous solution has been used as a precursor solution. The idea of the method is the decomposition of nitrate on a hot substrate according to the reaction Zn(NO3)2 → ZnO +2 NO2 +1/2O2. The layers were grown on glass, (001)Si and KCl substrates at the temperatures 300 - 500°C. The thickness of the obtained layers was in the range 50 - 500 nm, depending on the growth time and rate. The influence of substrate temperature on the morphology of the layers has been studied by SEM method. The energy gap of the layers was found to be the range of 3.26-3.3 eV from their absorption spectra.

  15. Zinc oxide films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Maciąg, Andrzej; Sagan, Piotr; Kuźma, Marian; Popovych, Volodymyr

    2017-01-01

    In this work we developed and tested spray pyrolysis system for layers deposition. In the system we have used ultrasonic apparatus (nebulizator) as a sprayer. A zinc nitrate aqueous solution has been used as a precursor solution. The idea of the method is the decomposition of nitrate on a hot substrate according to the reaction Zn(NO3)2 → ZnO +2 NO2 +1/2O2. The layers were grown on glass, (001)Si and KCl substrates at the temperatures 300 - 500°C. The thickness of the obtained layers was in the range 50 - 500 nm, depending on the growth time and rate. The influence of substrate temperature on the morphology of the layers has been studied by SEM method. The energy gap of the layers was found to be the range of 3.26-3.3 eV from their absorption spectra.

  16. Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

    SciTech Connect

    Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.; Creange, Nicole C.; Constantin, Costel; Sun, Kai

    2015-02-28

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  17. A long life zinc oxide-titanium oxide sorbent for moving bed reactors

    SciTech Connect

    Copeland, R.; Cesario, M.; Dubovik, M.; Feinberg, D.; Windecker, B.; Yang, J.

    1996-12-31

    Coal Fired Gasifier Combined Cycles (GCCs) have both high efficiency and very low emissions. GCCs are in critical need of a method to remove the H{sub 2}S produced from the sulfur in the coal from the hot gases. There has been extensive research on hot gas clean-up systems, focused on the use of a zinc oxide based sorbent (e.g., zinc titanate). However, the previous sorbents show significant losses in sulfur capacity with cycling. TDA Research, Inc. recently increased the zinc oxide content and sulfur loadings while simultaneously improving the attrition resistance. The improved fabrication method produces long life, low cost sorbent containing zinc oxide. The authors are currently testing sorbents at conditions simulating a moving bed reactor for GCC [i.e., 20 atm, 482 C (900 F) to 538 C (1,000 F), and 1% H{sub 2}S].

  18. Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

    NASA Astrophysics Data System (ADS)

    Rubio, Ernesto Javier

    Currently, there is enormous interest in research, development and optimization of the combustion processes for energy harvesting. Recent statistical and economic analyses estimated that by improving the coal-based firing/combustion processes in the power plants, savings up to $450-500 million yearly can be achieved. Advanced sensors and controls capable of withstanding extreme environments such as high temperatures, highly corrosive atmospheres, and high pressures are critical to such efficiency enhancement and cost savings. For instance, optimization of the combustion processes in power generation systems can be achieved by sensing, monitoring and control of oxygen, which is a measure of the completeness of the process and can lead to enhanced efficiency and reduced greenhouse gas emissions. However, despite the fact that there exists a very high demand for advanced sensors, the existing technologies suffer from poor 'response and recovery times' and 'long-term stability.' Motivated by the aforementioned technological challenges, the present work was focused on high-temperature (≥700 °C) oxygen sensors for application in power generation systems. The objective of the present work is to investigate nanostructured gallium oxide (2O3) based sensors for oxygen sensing, where we propose to conduct in-depth exploration of the role of refractory metal (tungsten, W, in this case) doping into 2O 3 to enhance the sensitivity, selectivity, stability ("3S" criteria) and reliability of such sensors while keeping cost economical. Tungsten (W) doped gallium oxide (2O3) thin films were deposited via rf-magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying the sputtering power applied to the W-target in order to achieve variable W content into 2O3 films while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-grown and post-annealed W-doped 2O3

  19. Thin film zinc oxide deposited by CVD and PVD

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  20. Comparison of electrodeposited and sputtered intrinsic and aluminium-doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Wellings, J. S.; Samantilleke, A. P.; Warren, P.; Heavens, S. N.; Dharmadasa, I. M.

    2008-12-01

    Intrinsic zinc oxide (i-ZnO) and aluminium-doped ZnO (ZnO:Al) are components of high-efficiency copper indium gallium diselenide solar cells. This paper examines both of these materials grown by two different techniques, namely radio frequency sputtering and electrodeposition (ED) for comparison and a better understanding. X-ray diffraction showed all materials to be polycrystalline and hexagonal (wurtzite) ZnO. Scanning electron microscopy indicated crystallites with different orientations for ED materials compared to agglomerated nanocrystallites of the sputtered layers. The band-gap energy was determined to be in the range 3.27-3.45 eV. The transmission was 85% for both ED materials and 95% for the sputtered layers. Glass/FTO/i-ZnO/Al structures were rectifying, and glass/FTO/ZnO:Al/Al contacts were ohmic for both ZnO:Al layers. Addition of Al decreases the bulk resistivity for both i-ZnO layers by 1-2 orders of magnitude. The photovoltage response to pulsed illumination showed a slow relaxation hysteresis, and all materials showed n-type electrical conduction.

  1. Millimeter wave ferromagnetic resonance in gallium-substituted ε-iron oxide

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2014-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  2. Recent progress in hydrothermal synthesis of zinc oxide nanomaterials.

    PubMed

    Djurisic, A B; Chen, X Y; Leung, Y H

    2012-06-01

    Hydrothermal synthesis is of considerable interest due to its low cost, simplicity and relatively low growth temperature (typically below 200 °C). Since the synthesis is performed in aqueous solutions (no organic solvents), it can also be safe and environmentally friendly (depending on precursor chemicals). Consequently, it has been a subject of intense research in recent years. In this article, we review recent progress in hydrothermal synthesis of zinc oxide nanomaterials, with focus on practical relevance for a variety of applications.

  3. Enterococcus faecalis zinc-responsive proteins mediate bacterial defence against zinc overload, lysozyme and oxidative stress.

    PubMed

    Abrantes, Marta C; Kok, Jan; Silva Lopes, Maria de Fátima

    2014-12-01

    Two Enterococcus faecalis genes encoding the P-type ATPase EF1400 and the putative SapB protein EF0759 were previously shown to be strongly upregulated in the presence of high concentrations of zinc. In the present work, we showed that a Zn(2+)-responsive DNA-binding motif (zim) is present in the promoter regions of these genes. Both proteins were further studied with respect to their involvement in zinc homeostasis and invasion of the host. EF0759 contributed to intramacrophage survival by an as-yet unknown mechanism(s). EF1400, here renamed ZntAEf, is an ATPase with specificity for zinc and plays a role in dealing with several host defences, i.e. zinc overload, oxidative stress and lysozyme; it provides E. faecalis cells with the ability to survive inside macrophages. As these three host defence mechanisms are important at several sites in the host, i.e. inside macrophages and in saliva, this work suggested that ZntAEf constitutes a crucial E. faecalis defence mechanism that is likely to contribute to the ability of this bacterium to endure life inside its host.

  4. Zinc ion and neutral emission from single crystal zinc oxide during 193-nm excimer laser exposure

    SciTech Connect

    Kahn, E. H.; Langford, S. C.; Boatner, Lynn A; Dickinson, J. T.

    2011-01-01

    Mass resolved time-of-flight measurements on neutral zinc atoms and zinc ions show energetic ions and neutrals during 193-nm irradiation of single crystals of semiconducting zinc oxide. Typical Zn+ kinetic energies are 3-5 eV. At fluences (energy per unit area per pulse) below 200 mJ/cm2, the ion intensities (per laser pulse) decrease monotonically to low values with laser pulse number. The depletion kinetics change from exponential to second order near 50 mJ/cm2. We attribute this change to the annihilation of defects yielding Zn+ emission when Zn+ or other surface defects become mobile. At fluences between 200 and 300 mJ/cm2, Zn+ emission becomes more sustained due to defects created by the laser. In this same fluence range, we observe the onset of detectable neutral atomic zinc emission. These neutral atoms display Maxwell-Boltzmann kinetic energy distributions w th effective surface temperatures that approach 5000 K as the fluence is raised to 350 mJ/cm2. These high surface temperatures are remarkable given the low etch rates observed at these fluences, suggesting that heated layer is extremely thin. We propose emission mechanisms and experiments to resolve outstanding questions.

  5. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    PubMed Central

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-01-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2–4 nm) nanoparticles. PMID:27734828

  6. Effect of zinc supplementation on oxidative drug metabolism in patients with hepatic cirrhosis.

    PubMed Central

    Barry, M G; Macmathuna, P; Younger, K; Keeling, P W; Feely, J

    1991-01-01

    The pharmacokinetics of antipyrine were studied in seven zinc deficient patients with hepatic cirrhosis, before and after zinc supplementation. Each patient received zinc sulphate 660 mg daily for 30 days, restoring zinc status to normal as assessed by leucocyte zinc concentration. Antipyrine clearance was significantly reduced (P less than 0.05) and antipyrine elimination half-life increased (P less than 0.05) following administration of zinc sulphate without significant alteration in the apparent volume of distribution. It is concluded that supplementation of the zinc deficiency associated with hepatic cirrhosis impaired the hepatic oxidative metabolism of antipyrine. PMID:2049261

  7. Radial growth of zinc oxide nanowire for piezoelectric nanogenerator application

    NASA Astrophysics Data System (ADS)

    Rasouli, Safa

    2017-04-01

    Nano- and micro-self-biased sensors employed environmental harvested energy, which are provided by different methods, such as piezoelectric. Piezoelectric materials are capable of producing electrical energy from environmental mechanical force. In this paper, a radial layer of well-arrayed hexagonal zinc oxide nanowires is grown on carbon fiber substrate using a two-step Chemical deposition method of metal salt growth. The resulted morphology is examined using Field Emission Scanning Electron Microscopy (FESEM) micrographs and X-ray Diffraction (XRD) pattern which indicates the quality and the crystallization order of the samples. In addition, composition of the material is studied using a Fourier Transform Infrared (FTIR) spectroscopy method. The results show that zinc oxide nanowires are well managed in vertical direction on the cylindrical carbon fibers. The hexagonal nanowires are grown with a length from 206 to 286 nm (Nanometer) and the diameter from 75 to 103 nm. The results of FTIR spectroscopy and XRD also illustrate the wurtzite structure of zinc oxide. The synthesized nanowires are then applied in a flexible capacitive piezoelectric nanogenerator consisting of a thin Ag layer as the upper contact and a carbon substrate as the back contact which are separated by a PMMA dielectric film. The output current and voltage are measured by applying a random pulse mechanical force on the upper contact. A maximum voltage and current of 14 mV (millivolt) and 20 nA (nanoampere) are generated at the output of nanogenerator, respectively.

  8. Nanocrystalline zinc oxide for the decontamination of sarin.

    PubMed

    Mahato, T H; Prasad, G K; Singh, Beer; Acharya, J; Srivastava, A R; Vijayaraghavan, R

    2009-06-15

    Nanocrystalline zinc oxide materials were prepared by sol-gel method and were characterized by X-ray diffraction, scanning electron microscopy, thermogravimetry, nitrogen adsorption and infrared spectroscopy techniques. The data confirmed the formation of zinc oxide materials of zincite phase with an average crystallite size of approximately 55 nm. Obtained material was tested as destructive adsorbent for the decontamination of sarin and the reaction was followed by GC-NPD and GC-MS techniques. The reaction products were characterized by GC-MS and the data explored the role of hydrolysis reaction in the detoxification of sarin. Sarin was hydrolyzed to form surface bound non-toxic phosphonate on the surface of nano-zinc oxide. The data also revealed the values of rate constant and half-life to be 4.12h(-1) and 0.16 h in the initial stages of the reaction and 0.361 h(-1) and 1.9h at the final stages of the reaction for the decontamination reaction on nanocrystalline ZnO.

  9. Paradoxical zinc toxicity and oxidative stress in the mammary gland during marginal dietary zinc deficiency

    PubMed Central

    Bostanci, Zeynep; Mack, Ronald P.; Lee, Sooyeon; Soybel, David I.; Kelleher, Shannon L.

    2014-01-01

    Zinc (Zn) regulates numerous cellular functions. Zn deficiency is common in females; ~80% of women and 40% of adolescent girls consume inadequate Zn. Zn deficiency enhances oxidative stress, inflammation and DNA damage. Oxidative stress and inflammation is associated with breast disease. We hypothesized that Zn deficiency increases oxidative stress in the mammary gland, altering the microenvironment and architecture. Zn accumulated in the mammary glands of Zn deficient mice and this was associated with macrophage infiltration, enhanced oxidative stress and over-expression of estrogen receptor α. Ductal and stromal hypercellularity was associated with aberrant collagen deposition and disorganized e-cadherin. Importantly, these microenvironmental alterations were associated with substantial impairments in ductal expansion and mammary gland development. This is the first study to show that marginal Zn deficiency creates a toxic microenvironment in the mammary gland impairing breast development. These changes are consistent with hallmarks of potential increased risk for breast disease and cancer. PMID:25088245

  10. Excimer laser interaction with zinc oxide

    NASA Astrophysics Data System (ADS)

    Khan, Enamul Haque

    When single crystal ZnO is exposed to 193-nm laser photons in vacuum at fluences below 100 mJ/cm2, isolated Zn vacancies are produced due to the emission of energetic Zn+. The pair wise formation of Zn vacancies and Zn+ interstitials is attributed to the photochemical excitation of anti-bonding Zn-O bonds. Interstitial Zn + diffuses to the surface where it is loosely bound to the surface---often atop a photoionizable electron trap; adsorbed Zn+ is emitted when the underlying trap is photoionized. Isolated Zn vacancies also diffuse following the laser pulse. These electron traps can reduce the near-surface free carrier concentration by as much as a factor of five on irradiated samples. At fluences between 150 and 200 mJ/cm2, 193-nm irradiation produces sustained emission of ionic and neutral species. The near-surface region of the irradiated sample becomes increasingly metallic and zinc rich. At fluences in the 250--300 mJ/cm2 range, a slower component of the Zn+ emission appears which is attributed to the excitation of an auto-ionizing state at 12.77 eV. The same excitation also yields Zn atomic light emission, predominately due to transitions on the triplet manifold. Rydberg Zn* atoms in high-lying quantum states appear at a threshold fluence of about 350 mJ/cm2. At fluences greater than or equal to 2 J/cm2, atomic light emission due to optical breakdown is observed.

  11. Zinc oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2005-10-04

    Zinc oxide-based sorbents, and processes for preparing and using them are provided, wherein the sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents contain an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2 O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, containing a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  12. Zinc-oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasael

    2010-03-23

    Zinc oxide-based sorbents, and processes for preparing and using them are provided. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  13. Zinc-oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasael

    2010-03-23

    Zinc oxide-based sorbents, and processes for preparing and using them are provided. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  14. Durable zinc oxide-containing sorbents for coal gas desulfurization

    DOEpatents

    Siriwardane, Ranjani V.

    1996-01-01

    Durable zinc-oxide containing sorbent pellets for removing hydrogen sulfide from a gas stream at an elevated temperature are made up to contain titania as a diluent, high-surface-area silica gel, and a binder. These materials are mixed, moistened, and formed into pellets, which are then dried and calcined. The resulting pellets undergo repeated cycles of sulfidation and regeneration without loss of reactivity and without mechanical degradation. Regeneration of the pellets is carried out by contacting the bed with an oxidizing gas mixture.

  15. MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air

    NASA Astrophysics Data System (ADS)

    Pflitsch, Christian; Nebatti, Abdelkader; Brors, Georg; Atakan, Burak

    2012-06-01

    The metalorganic chemical vapour deposition (MOCVD) of thin zinc oxide films on borosilicate glass and silicon substrates in a hot-wall CVD-reactor (HWR) was studied. Zinc acetylacetonate (Zn(acac)2) and air were used as precursors. The aim of this work was to optimize the deposition parameters, such as pressure and deposition temperature, with respect to the film quality, structure, and homogeneity. Most experiments were performed at atmospheric pressure; this approach avoids the usage of an expensive vacuum system. It turned out that polycrystalline zinc oxide is grown at deposition temperatures above 613 K. Above 823 K, they additionally are c-axis orientated. At atmospheric pressure and lower temperature (<773 K) the film deposition is homogeneously over the whole tube furnace while at higher temperature inhomogeneous film growth and particle formation are observed, indicating a shift of the growth mechanism to the diffusion controlled regime. Although the homogeneity is improved by using higher flow velocities at atmospheric pressure, particle growth cannot be suppressed. Only at reduced pressure, which was 200 mbar in the present case, the deposition at 823 K is kinetically controlled and without particle formation, resulting in the homogeneous growth of well adhering ZnO films with c-axis orientation.

  16. Induction of nitric oxide-dependent apoptosis in motor neurons by zinc-deficient superoxide dismutase.

    PubMed

    Estévez, A G; Crow, J P; Sampson, J B; Reiter, C; Zhuang, Y; Richardson, G J; Tarpey, M M; Barbeito, L; Beckman, J S

    1999-12-24

    Mutations in copper, zinc superoxide dismutase (SOD) have been implicated in the selective death of motor neurons in 2 percent of amyotrophic lateral sclerosis (ALS) patients. The loss of zinc from either wild-type or ALS-mutant SODs was sufficient to induce apoptosis in cultured motor neurons. Toxicity required that copper be bound to SOD and depended on endogenous production of nitric oxide. When replete with zinc, neither ALS-mutant nor wild-type copper, zinc SODs were toxic, and both protected motor neurons from trophic factor withdrawal. Thus, zinc-deficient SOD may participate in both sporadic and familial ALS by an oxidative mechanism involving nitric oxide.

  17. Calcium oxide and magnesium oxide inhibit plasma coagulation by Staphylococcus aureus cells at the lower concentration than zinc oxide.

    PubMed

    Akiyama, H; Yamasaki, O; Tada, J; Arata, J

    1999-12-01

    We examined the effect of ceramic powder slurries on the coagulation of plasma by Staphylococcus aureus cells. Plasma coagulation by S. aureus strains or their cultured supernatant was inhibited in the plasma with 0.12% calcium oxide or 0.25% magnesium oxide after incubation for 24 h at 37 degrees C. Inhibition of plasma coagulation by calcium oxide and magnesium oxide was observed at the lower concentration than zinc oxide.

  18. Comparative Study of Antidiabetic Activity and Oxidative Stress Induced by Zinc Oxide Nanoparticles and Zinc Sulfate in Diabetic Rats.

    PubMed

    Nazarizadeh, Ali; Asri-Rezaie, Siamak

    2016-08-01

    In the current study, antidiabetic activity and toxic effects of zinc oxide nanoparticles (ZnO) were investigated in diabetic rats compared to zinc sulfate (ZnSO4) with particular emphasis on oxidative stress parameters. One hundred and twenty male Wistar rats were divided into two healthy and diabetic groups, randomly. Each major group was further subdivided into five subgroups and then orally supplemented with various doses of ZnO (1, 3, and 10 mg/kg) and ZnSO4 (30 mg/kg) for 56 consecutive days. ZnO showed greater antidiabetic activity compared to ZnSO4 evidenced by improved glucose disposal, insulin levels, and zinc status. The altered activities of erythrocyte antioxidant enzymes as well as raised levels of lipid peroxidation and a marked reduction of total antioxidant capacity were observed in rats receiving ZnO. ZnO nanoparticles acted as a potent antidiabetic agent, however, severely elicited oxidative stress particularly at higher doses.

  19. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, A.D.; Modine, F.A.; Lauf, R.J.; Alim, M.A.; Mahan, G.D.; Bartkowiak, M.

    1998-12-29

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2--4.0% oxide of at least one rare earth element, 0.5--4.0% Co{sub 3}O{sub 4}, 0.05--0.4% K{sub 2}O, 0.05--0.2% Cr{sub 2}O{sub 3}, 0--0.2% CaO, 0.00005--0.01% Al{sub 2}O{sub 3}, 0--2% MnO, 0--0.05% MgO, 0--0.5% TiO{sub 3}, 0--0.2% SnO{sub 2}, 0--0.02% B{sub 2}O{sub 3}, balance ZnO. 4 figs.

  20. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, April D.; Modine, Frank A.; Lauf, Robert J.; Alim, Mohammad A.; Mahan, Gerald D.; Bartkowiak, Miroslaw

    1998-01-01

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2-4.0% oxide of at least one rare earth element, 0.5-4.0% Co.sub.3 O.sub.4, 0.05-0.4% K.sub.2 O, 0.05-0.2% Cr.sub.2 O.sub.3, 0-0.2% CaO, 0.00005-0.01% Al.sub.2 O.sub.3, 0-2% MnO, 0-0.05% MgO, 0-0.5% TiO.sub.3, 0-0.2% SnO.sub.2, 0-0.02% B.sub.2 O.sub.3, balance ZnO.

  1. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    DTIC Science & Technology

    2016-03-30

    AFRL-RX-WP-JA-2017-0144 HIGH TRANSPARENT CONDUCTIVE ALUMINUM - DOPED ZINC OXIDE THIN FILMS BY REACTIVE CO- SPUTTERING (POSTPRINT...TRANSPARENT CONDUCTIVE ALUMINUM -DOPED ZINC OXIDE THIN FILMS BY REACTIVE CO-SPUTTERING (POSTPRINT) 5a. CONTRACT NUMBER FA8650-16-D-5402-0001 5b. GRANT...ANSI Std. Z39-18 TD.11.pdf Optical Interference Coatings (OIC) 2016 © OSA 2016 1 High Transparent Conductive Aluminum -doped Zinc Oxide Thin

  2. Synthesis, characterization and optical properties of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Kumar, Surabhi Siva; Venkateswarlu, Putcha; Rao, Vanka Ranga; Rao, Gollapalli Nagewsara

    2013-05-01

    Zinc oxide nanoparticles were synthesized using a simple precipitation method with zinc sulfate and sodium hydroxide as starting materials. The synthesized sample was calcined at different temperatures for 2 h. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and proton-induced X-ray emission (PIXE) analysis. SEM images show various morphological changes of ZnO obtained by the above method. The average crystallite sizes of the samples were calculated from the full width at half maximum of XRD peaks by using Debye-Scherrer's formula and were found to be in the nanorange. EDS shows that the above route produced highly pure ZnO nanostructures. PIXE technique was used for trace elemental analysis of ZnO. The optical band gaps of various ZnO powders were calculated from UV-visible diffuse reflectance spectroscopic studies.

  3. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  4. Photodeposition of copper and chromia on gallium oxide: the role of co-catalysts in photocatalytic water splitting.

    PubMed

    Busser, G Wilma; Mei, Bastian; Pougin, Anna; Strunk, Jennifer; Gutkowski, Ramona; Schuhmann, Wolfgang; Willinger, Marc-Georg; Schlögl, Robert; Muhler, Martin

    2014-04-01

    Split second: The photocatalytic activity of gallium oxide (β-Ga2 O3) depends strongly on the co-catalysts CuOx and chromia, which can be efficiently deposited in a stepwise manner by photoreduction of Cu(2+) and CrO4 (2-). The water-splitting activity can be tuned by varying the Cu loading in the range 0.025-1.5 wt %, whereas the Cr loading is not affecting the rate as long as small amounts (such as 0.05 wt %) are present. Chromia is identified as highly efficient co-catalyst in the presence of CuOx : it is essential for the oxidation of water.

  5. The zinc ferrite obtained by oxidative precipitation method as a catalyst in n-butanol conversion

    SciTech Connect

    Klimkiewicz, Roman Wolska, Jolanta; Przepiera, Aleksander; Przepiera, Krystyna; Jablonski, Maciej; Lenart, Stanislaw

    2009-01-08

    This paper presents the results of catalytic properties of n-butanol conversion of the zinc ferrite obtained by oxidative precipitation method. The zinc ferrite showed good dehydrogenating activity but also catalyzed consecutive bimolecular condensation of emerged aldehyde particles into symmetrical ketone. The zinc-iron oxide of spinel structure was prepared from ferrous sulfate, which forms as a waste during the titanium dioxide production. The X-ray diffraction methods (XRD, XRF) were used in determining the structure and composition of obtained zinc ferrite, while thermogravimetry (TG-DTG), and differential thermal analysis (DTA) were used in the study of thermal transformations of zinc spinel in air.

  6. Silver/zinc oxide self-assembled nanostructured bolometer

    NASA Astrophysics Data System (ADS)

    Sanchez, John E.; González, Gabriel; Vera-Reveles, Gustavo; Velazquez-Salazar, J. Jesus; Bazan-Diaz, Lourdes; Gutiérrez-Hernández, José M.; José-Yacaman, Miguel; Ponce, Arturo; González, Francisco J.

    2017-03-01

    Temperature coefficient of resistance (TCR) is the main figure of merit for bolometric detectors. Reports show that zinc oxide can have TCR values higher than vanadium oxide (VOx) and amorphous silicon (a-Si), which are the most common materials used in bolometric applications, however its high resistivity makes it difficult to match it to read-out electronics. In this work, self-assembled nanostructures of Silver/Zinc oxide (Ag/ZnO) have been fabricated as well as their electrical and optical properties were measured as function of the Ag/ZnO concentration ratio. It was found that the nanostructures with the highest ZnO concentration exhibited a temperature coefficient of resistance as high as -11.8% K-1 near room temperature. Moreover, the TCR values and conductivity of the material can be tuned with the Ag/ZnO concentration ratio. This tuning flexibility allows this material to be better matched to read-out integrated circuits.

  7. Developmental toxicity of intravenously injected zinc oxide nanoparticles in rats.

    PubMed

    Lee, Jinsoo; Yu, Wook-Joon; Song, Jeongah; Sung, Changhyun; Jeong, Eun Ju; Han, Ji-Seok; Kim, Pilje; Jo, Eunhye; Eom, Ikchun; Kim, Hyun-Mi; Kwon, Jung-Taek; Choi, Kyunghee; Choi, Jonghye; Kim, Heyjin; Lee, Handule; Park, Juyoung; Jin, Seon Mi; Park, Kwangsik

    2016-12-01

    Recent toxicity studies of zinc oxide nanoparticles by oral administration showed relatively low toxicity, which may be resulted from low bioavailability. So, the intrinsic toxicity of zinc oxide nanoparticles needs to be evaluated in the target organs by intravenous injection for full systemic concentration of the administered dosage. Although the exposure chance of injection route is low compared to oral and/or inhalation route, it is important to see the toxicity with different exposure routes to get better risk management tool. In this study, the effects of zinc oxide nanoparticles on dams and fetuses were investigated in rats after intravenous injection (5, 10, and 20 mg/kg) from gestation day 6 to 20. Two of 20 dams in the 20 mg/kg treatment group died during the treatment period. Hematological examination and serum biochemistry showed dose-dependent toxicity in treated dams. Histopathological analysis of treated dams revealed multifocal mixed cell infiltration and thrombosis in lung, tubular dilation in kidneys, and extramedullary hemopoiesis in liver. Total dead fetuses (post-implantation loss) were increased and the body weight of fetus was decreased in the 20 mg/kg treatment group. Statistical differences in corpora lutea, resorption, placental weight, morphological alterations including external, visceral and skeletal malformations were not observed in treated groups. Based on the data, lowest observed adverse effect level of injection route was suggested to be 5 mg/kg in dams and no observed adverse effect level was suggested to be 10 mg/kg in fetal developmental toxicity.

  8. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  9. Sliding of zinc oxide nanowires on silicon substrate

    NASA Astrophysics Data System (ADS)

    Desai, A. V.; Haque, M. A.

    2007-01-01

    Adhesion and friction forces between zinc oxide nanowires and silicon substrate were studied in situ inside a scanning electron microscope. A procedure for measuring these forces from the bending profiles of the nanowires was developed and the van der Waals and friction forces were found to be about 81.05pN and 7.7nN, respectively. The pronounced friction was explained using nanoscale adhesion-friction coupling mechanisms. Immediate implication of the findings is on the accuracy of nanomechanical characterization using bending experiments.

  10. Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition

    SciTech Connect

    Klochko, N. P. Klepikova, K. S.; Khrypunov, G. S.; Volkova, N. D.; Kopach, V. R.; Lyubov, V. M.; Kirichenko, M. V.; Kopach, A. V.

    2015-02-15

    Conditions for the pulsed electrochemical deposition of nanostructured zinc oxide arrays with a certain morphology, crystal structure, and optical properties from aqueous electrolytes onto substrates of transparent electrically conducting tin dioxide and on single-crystal silicon wafers with built-in homojunctions are studied in order to develop antireflection coatings for solar cells. It is shown that it is possible to obtain single-layer planar antireflection coatings or arrays of nanorods of this material, both having the form of hexagonal prisms and exhibiting the moth-eye effect.

  11. Behavior of zinc oxide surge arresters under pollution

    SciTech Connect

    Feser, F.; Kohler, W.; Qiu, D. ); Chrzan, K. )

    1991-04-01

    This paper presents results of pollution tests with AC voltages which were carried out with a multi-unit zinc oxide arrester. The interaction between the polluted porcelain housing and the inner varistor column due to capacitive coupling has been found to be responsible for the temperature rise of varistor elements. The different voltage distribution between inside and outside of the arrester also causes a high radial electric field which can lead to internal discharges if the radial insulation system is not properly designed. These internal discharges may damage varistor elements which are not adequately coated and may cause a total destruction of the arrester.

  12. Fast pulse response of zinc-oxide varistors

    SciTech Connect

    Modine, F.A.; Wheeler, R.B.

    1987-04-15

    The fast pulse response of zinc-oxide varistors is studied for both high-impedance and low-impedance pulse sources. The effects of varistor capacitance and source impedance on the pulse response are examined, and quantitative descriptions of the pulse response are presented. Evidence that the varistor capacitance does not increase near breakdown voltages is found, and the implications of this result with regard to models of varistor conduction are discussed. The relationships between the properties of a varistor and its ability to protect against fast pulses are considered.

  13. Modeling of electrical transport in Zinc Oxide varistors

    NASA Astrophysics Data System (ADS)

    Bavelis, K.; Gjonaj, E.; Weiland, T.

    2014-11-01

    The electrical transport in zinc oxide (ZnO) varistors is analyzed using microstructural material modeling. The fully three dimensional current distribution is computed by means of a nonlinear equivalent circuit model representing the assembly of current carrying grains and grain boundaries of the material. The investigation focuses on the phenomenon of current filamentation due to inhomogeneities of the varistor microstructure. Numerical results highlight the importance of 3-D percolation effects in the modeling of varistor currents as well as that of the grain bulk resistivity which so far has been neglected in previous studies.

  14. Electron beam irradiation stiffens zinc tin oxide nanowires.

    PubMed

    Zang, Jianfeng; Bao, Lihong; Webb, Richard A; Li, Xiaodong

    2011-11-09

    We report a remarkable phenomenon that electron beam irradiation (EBI) significantly enhances the Young's modulus of zinc tin oxide (ZTO) nanowires (NWs), up to a 40% increase compared with the pristine NWs. In situ uniaxial buckling tests on individual NWs were conducted using a nanomanipulator inside a scanning electron microscope. We propose that EBI results in substantial atomic bond contraction in ZTO NWs, accounting for the observed mechanically stiffening. This argument is supported by our experimental results that EBI also reduces the electrical conductivity of ZTO NWs.

  15. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

    NASA Astrophysics Data System (ADS)

    Morales, Daniel; Stoute, Nicholas A.; Yu, Zhiyuan; Aspnes, David E.; Dickey, Michael D.

    2016-08-01

    Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ɛ are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

  16. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

    SciTech Connect

    Morales, Daniel; Yu, Zhiyuan; Dickey, Michael D. E-mail: aspnes@ncsu.edu; Stoute, Nicholas A.; Aspnes, David E. E-mail: aspnes@ncsu.edu

    2016-08-29

    Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ε are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

  17. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    SciTech Connect

    Melo, Ronaldo P. de; Oliveira, Nathalia Talita C.; Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Araújo, Cid B. de; Falcão, Eduardo H. L.; Alves, Severino; Luz, Leonis L. da; Chassagnon, Remi; Sacilotti, Marco

    2016-04-28

    A novel procedure based on a two-step method was developed to obtain β-Ga{sub 2}O{sub 3} nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga{sub 2}O{sub 3} nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga{sub 2}O{sub 3} material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  18. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    NASA Astrophysics Data System (ADS)

    de Melo, Ronaldo P.; Oliveira, Nathalia Talita C.; Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Falcão, Eduardo H. L.; Alves, Severino; da Luz, Leonis L.; Chassagnon, Remi; de Araújo, Cid B.; Sacilotti, Marco

    2016-04-01

    A novel procedure based on a two-step method was developed to obtain β-Ga2O3 nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga2O3 nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga2O3 material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  19. A combined marginal deficiency of copper and zinc does not exacerbate oxidant stress asssociated with copper or zinc deficiency

    USDA-ARS?s Scientific Manuscript database

    Both copper deficiency (Cu-def) and zinc deficiency (Zn-def) result in oxidative stress. Thus, an experiment was conducted to determine whether a marginal Zn-def amplified oxidative stress responses to a marginal Cu-def, or vice versa. Weanling male Sprague-Dawley rats were assigned to groups of 10 ...

  20. Electrochemical deposition of zinc oxide nanorods for hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Torres Damasco Ty, Jennifer; Yanagi, Hisao

    2015-04-01

    Zinc oxide (ZnO) nanorod arrays for inorganic/organic hybrid solar cells were electrochemically deposited on indium tin oxide (ITO) substrates with a rotating disk electrode setup. The addition of a ZnO seed layer on the ITO prior to electrochemical deposition improved the morphology of the nanorods, resulting in nanorods with smaller and homogenous diameters as well as a higher degree of vertical orientation on to the substrate. The ZnO films deposited on the seeded ITO substrates had higher optical transmittance and lower concentration of defects. Chronoamperometric transient curves show that nucleation and coalescence occurred later for bare ITO substrates, indicating lower densities of initial nuclei, resulting in the growth of nanorods with larger diameters. The solar cell characteristics of the devices fabricated from the seeded ITO substrates were better. The seed layer also acts as a hole-blocking layer, preventing the direct contact between the hole-transporting polymer material and the ITO.

  1. Activation of aromatics on the polar surfaces of zinc oxide

    SciTech Connect

    Vohs, J.M.; Barteau, M.A. )

    1989-12-28

    The reactions of the aromatic oxygenates benzoic acid, benzaldehyde, benzyl alcohol, and phenol exhibit both strong similarities and strong differences as compared with their aliphatic analogues on the two polar surfaces of zinc oxide. The greatest similarities between aromatic and aliphatic compounds were observed on the (0001)-Zn polar surface. Benzyl alcohol and phenol reacted on the (0001)-Zn surface to form the corresponding surface alkoxide species. In sharp contrast to aliphatic alcohols, aldehydes, and carboxylic acids, toward which the (0001)-O polar surface is unreactive, the aromatic compounds reacted on the (0001)-O polar surface. These results further demonstrate the effects of surface crystallographic structure in determining the activity and reaction pathways on the metal oxide surfaces.

  2. Zinc oxide nanoparticles as novel alpha-amylase inhibitors

    NASA Astrophysics Data System (ADS)

    Dhobale, Sandip; Thite, Trupti; Laware, S. L.; Rode, C. V.; Koppikar, Soumya J.; Ghanekar, Ruchika-Kaul; Kale, S. N.

    2008-11-01

    Amylase inhibitors, also known as starch blockers, contain substances that prevent dietary starches from being absorbed by the body via inhibiting breakdown of complex sugars to simpler ones. In this sense, these materials are projected as having potential applications in diabetes control. In this context, we report on zinc oxide nanoparticles as possible alpha-amylase inhibitors. Zinc oxide nanoparticles have been synthesized using soft-chemistry approach and 1-thioglycerol was used as a surfactant to yield polycrystalline nanoparticles of size ˜18 nm, stabilized in wurtzite structure. Conjugation study and structural characterization have been done using x-ray diffraction technique, Fourier transform infrared spectroscopy, UV-visible spectroscopy, and transmission electron microscopy. Cytotoxicity studies on human fibrosarcoma (HT-1080) and skin carcinoma (A-431) cell lines as well as mouse primary fibroblast cells demonstrate that up to a dose of 20 μg/ml, ZnO nanoparticles are nontoxic to the cells. We report for the first time the alpha-amylase inhibitory activity of ZnO nanoparticles wherein an optimum dose of 20 μg/ml was sufficient to exhibit 49% glucose inhibition at neutral pH and 35 °C temperature. This inhibitory activity was similar to that obtained with acarbose (a standard alpha-amylase inhibitor), thereby projecting ZnO nanoparticles as novel alpha-amylase inhibitors.

  3. Synthesis and characterization of Ar-annealed zinc oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Kuthirummal, Narayanan; Smith, Gregory M.; Lopez, Leisha; Podila, Ramakrishna; Howell, Jason; Dun, Chaochao; Rao, Apparao M.

    2016-09-01

    Nanostructured zinc oxide samples were synthesized through CVD and annealed in argon. The samples were investigated using SEM, TEM, XRD, and UV/VIS/FTIR photoacoustic spectroscopy. The SEM/TEM images show relatively spherical particles that form elongated, connected domains post-anneal. XRD measurements indicate a typical wurtzite structure and reveal an increase in average grain size from 16.3 nm to 21.2 nm in Ar-annealed samples over pristine samples. Visible photoacoustic spectra reveal the contribution of defect levels on the absorption edge of the fundamental gap of zinc oxide. The steepness parameter of the absorption edge, which is inversely proportional to the width of the absorption edge, decreased from 0.1582 (pristine) to 0.1539 (annealed for 90 minutes) revealing increased density of defect states upon annealing. The FTIR photoacoustic spectra show an intense peak at 412 cm-1 and a shoulder at 504 cm-1 corresponding to the two transverse optical stretching modes of ZnO. These results may indicate a self-assembly mechanism upon anneal under Ar atmosphere leading to early-stage nanorod growth.

  4. Design and photocatalytic activity of nanosized zinc oxides

    NASA Astrophysics Data System (ADS)

    Gancheva, M.; Markova-Velichkova, M.; Atanasova, G.; Kovacheva, D.; Uzunov, I.; Cukeva, R.

    2016-04-01

    Zinc oxide particles with various morphologies were successfully prepared via three synthesis methods: precipitation; tribophysical treatment and sonochemistry. The as-synthesized samples were characterized by X-ray diffraction (XRD); infrared spectroscopy (IR); scanning electron microscope (SEM); BET specific surface area; electron-paramagnetic resonance (EPR), UV-Vis absorption/diffuse reflectance and X-ray photoelectron spectroscopy (XPS). Photocatalytic activities of the samples were evaluated by degradation of Malachite Green (MG) in an aqueous solution under UV and visible irradiation. The obtained ZnO powders possess crystallites size below 20 nm. The ZnO with spherical particles were obtained by precipitation method. The sonochemistry approach leads to preparation of ZnO with nanorod particles. The calculated band gaps of various ZnO powders belong to the range from 3.12 to 3.30 eV. The obtained polycrystalline zinc oxides exhibit good photocatalytic activity which is strongly influenced by the preparation conditions. The nanorod ZnO exhibits high photocatalytic activity under UV irradiation which is attributed to the morphology and the geometric surface of the particles. The ZnO obtained by precipitation has better photocatalytic efficiency under visible irradiation due to high B.E.T. specific surface area and the low level of band gap. Tribophysical treatment of a particle size-homogeneous system leads to deterioration of the photocatalytic activity of the material.

  5. Ferrate(VI) oxidation of zinc-cyanide complex.

    PubMed

    Yngard, Ria; Damrongsiri, Seelawut; Osathaphan, Khemarath; Sharma, Virender K

    2007-10-01

    Zinc-cyanide complexes are found in gold mining effluents and in metal finishing rinse water. The effect of Zn(II) on the oxidation of cyanide by ferrate(VI) (Fe(VI)O(4)(2-), Fe(VI)) was thus investigated by studying the kinetics of the reaction of Fe(VI) with cyanide present in a potassium salt of a zinc cyanide complex (K(2)Zn(CN)(4)) and in a mixture of Zn(II) and cyanide solutions as a function of pH (9.0-11.0). The rate-law for the oxidation of Zn(CN)(4)(2-) by Fe(VI) was found to be -d[Fe(VI)]/dt=k[Fe(VI)][Zn(CN)(4)(2-)](0.5). The rate constant, k, decreased with an increase in pH. The effect of temperature (15-45 degrees C) on the oxidation was studied at pH 9.0, which gave an activation energy of 45.7+/-1.5kJmol(-1). The cyanide oxidation rate decreased in the presence of the Zn(II) ions. However, Zn(II) ions had no effect on the cyanide removal efficiency by Fe(VI) and the stoichiometry of Fe(VI) to cyanide was approximately 1:1; similar to the stoichiometry in absence of Zn(II) ions. The destruction of cyanide by Fe(VI) resulted in cyanate. The experiments on removal of cyanide from rinse water using Fe(VI) demonstrated complete conversion of cyanide to cyanate.

  6. Determining adaptive and adverse oxidative stress responses in human bronical epithelial cells exposed to zinc

    EPA Science Inventory

    Determining adaptive and adverse oxidative stress responses in human bronchial epithelial cells exposed to zincJenna M. Currier1,2, Wan-Yun Cheng1, Rory Conolly1, Brian N. Chorley1Zinc is a ubiquitous contaminant of ambient air that presents an oxidant challenge to the human lung...

  7. Comparison of endoflas and zinc oxide eugenol as root canal filling materials in primary dentition.

    PubMed

    Rewal, Nivedita; Thakur, Arun Singh; Sachdev, Vinod; Mahajan, Nanika

    2014-01-01

    Zinc oxide eugenol has long been the material of choice of pediatric dentists worldwide, although it fails to meet the ideal requirements of root canal filling material for primary teeth. Endoflas, a mixture of zinc oxide eugenol, calcium hydroxide, and iodoform, can be considered to be an effective root canal filling material in primary teeth as compared with zinc oxide eugenol. This study was carried out to compare zinc oxide eugenol with endoflas for pulpectomy in primary dentition. The objective of the study was to compare clinically and radiographically success rates of zinc oxide eugenol with endoflas for the root canal filling of primary teeth at 3, 6, and 9 months. Fifty primary molars were included in the study with 26 teeth in Group I (Endoflas) and 24 in Group II (zinc oxide eugenol). A single visit pulpectomy was carried out. The overall success rate of zinc oxide eugenol was 83% whereas 100% success was found in the case of endoflas. The obtained results were compiled and subjected to statistical analysis using the chi-square test. The difference in the success rate between the two was statistically significant (P < 0.05). Endoflas has shown to have better results than zinc oxide eugenol. It should therefore be the material of choice for root canal treatment in deciduous dentition.

  8. Determining adaptive and adverse oxidative stress responses in human bronical epithelial cells exposed to zinc

    EPA Science Inventory

    Determining adaptive and adverse oxidative stress responses in human bronchial epithelial cells exposed to zincJenna M. Currier1,2, Wan-Yun Cheng1, Rory Conolly1, Brian N. Chorley1Zinc is a ubiquitous contaminant of ambient air that presents an oxidant challenge to the human lung...

  9. Oxygen isotope fractionation in zinc oxides and implications for zinc mineralization in the Sterling Hill deposit, USA

    NASA Astrophysics Data System (ADS)

    Zheng, Y.-F.

    1996-01-01

    Oxygen isotope fractionation in the zinc oxides has been calculated by means of the modified increment method. The results suggest that zincite is slightly enriched in 18O relative to the franklinite of the spinel-type structure but considerably depleted in 18O relative to the franklinite of the inverse spinel-type structure. The zinc oxides are significantly depleted in 18O relative to water under hydrothermal and metamorphic conditions. The oxygen isotope analyses of mineral pairs including the zinc oxides and the common gangue minerals such as calcite and quartz can constitute a sensitive isotope geothermometer. Application of oxygen isotope geothermometry to natural assemblages is attempted for the calcite-zinc ore mineral pairs from the Sterling Hill deposit in USA. The results indicate that the temperature of the zinc mineralization may be in the range from 410° to 630 °C and thus lower than the metamorphic temperatures of granulite facies. A metamorphic fluid could have been involved in the formation of the zinc ore minerals. Franklinite would structurally be an inverse spinel in the infancy of its formation, and thus could have originally evolved from Zn2 + substitution to Fe2 + of magnetite at the high temperatures.

  10. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide.

    PubMed

    Sampson, Matthew D; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-04-05

    Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazing-incidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

  11. Influence of Camellia sinensis extract on Zinc Oxide nanoparticle green synthesis

    NASA Astrophysics Data System (ADS)

    Nava, O. J.; Luque, P. A.; Gómez-Gutiérrez, C. M.; Vilchis-Nestor, A. R.; Castro-Beltrán, A.; Mota-González, M. L.; Olivas, A.

    2017-04-01

    This work addresses low cost, non-toxic green synthesis of Zinc Oxide nanoparticles prepared using different amounts of Camellia sinensis extract. The Synthesized material was studied and characterized through Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), transmission electron microscopy (TEM). The Zinc Oxide nanoparticles presented the desired Znsbnd O bond at 618 cm-1, demonstrated growth in a purely hexagonal Wurtzite crystal structure, and, depending on the amount of extract used, they presented different size and shape homogeneity. The photocatalytic activity of the obtained Zinc Oxide nanoparticles was studied. The photocatalytic degradation studies were done at a 1:1 M ratio of methylene blue to Zinc Oxide nanoparticles under UV light. The obtained results presented a better degradation rate than commercially available Zinc Oxide nanoparticles.

  12. An assessment of zinc oxide nanosheets as a selective adsorbent for cadmium

    PubMed Central

    2013-01-01

    Zinc oxide nanosheet is assessed as a selective adsorbent for the detection and adsorption of cadmium using simple eco-friendly extraction method. Pure zinc oxide nanosheet powders were characterized using field emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The zinc oxide nanosheets were applied to different metal ions, including Cd(II), Cu(II), Hg(II), La(III), Mn(II), Pb(II), Pd(II), and Y(III). Zinc oxide nanosheets were found to be selective for cadmium among these metal ions when determined by inductively coupled plasma-optical emission spectrometry. Moreover, adsorption isotherm data provided that the adsorption process was mainly monolayer on zinc oxide nanosheets. PMID:24011201

  13. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  14. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  15. Resistance of extremely halophilic archaea to zinc and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Salgaonkar, Bhakti B.; Das, Deepthi; Bragança, Judith Maria

    2016-02-01

    Industrialization as well as other anthropogenic activities have resulted in addition of high loads of metal and/or metal nanoparticles to the environment. In this study, the effect of one of the widely used heavy metal, zinc (Zn) and zinc oxide nanoparticles (ZnO NPs) on extremely halophilic archaea was evaluated. One representative member from four genera namely Halococcus, Haloferax, Halorubrum and Haloarcula of the family Halobacteriaceae was taken as the model organism. All the haloarchaeal genera investigated were resistant to both ZnCl2 and ZnO NPs at varying concentrations. Halococcus strain BK6 and Haloferax strain BBK2 showed the highest resistance in complex/minimal medium of up to 2.0/1.0 mM ZnCl2 and 2.0/1.0-0.5 mM ZnO NP. Accumulation of ZnCl2/ZnO NPs was seen as Haloferax strain BBK2 (287.2/549.6 mg g-1) > Halococcus strain BK6 (165.9/388.5 mg g-1) > Haloarcula strain BS2 (93.2/28.5 mg g-1) > Halorubrum strain BS17 (29.9/16.2 mg g-1). Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM-EDX) analysis revealed that bulk ZnCl2 was sorbed at a higher concentration (21.77 %) on the cell surface of Haloferax strain BBK2 as compared to the ZnO NPs (14.89 %).

  16. Dielectric properties and carbothermic reduction of zinc oxide and zinc ferrite by microwave heating

    PubMed Central

    Fabritius, Timo; Heikkinen, Eetu-Pekka; Chen, Guo

    2017-01-01

    This paper aims to study the dielectric properties and carbothermic reduction of zinc oxide (zincite, ZnO) and zinc ferrite (franklinite, ZnFe2O4) by microwave heating. To achieve this aim, the dielectric properties were measured with an open-ended coaxial method to understand the behaviour of the samples under microwave irradiation. The effects of microwave power, duration time and sample mass on the heating rate, and the effects of the stoichiometric amount of graphite on the reduction of ZnO and decomposition of ZnFe2O4 were investigated. The results show that ZnFe2O4 has significantly higher dielectric properties compared to ZnO. Generally, for both samples, the dielectric values at room temperature were quite low, indicating that both ZnO and ZnFe2O4 are poor microwave absorbers. It was found that the temperatures have a more significant effect on the imaginary permittivities than on the real permittivities. The heating rate showed that the sample temperature increased with increase in microwave power and sample mass. Using 700 W of microwave power and two times the stoichiometric amount of graphite, almost complete reduction of ZnO was achieved in 12 min, while ZnFe2O4 completely decomposed to zincite and wustite in 3 min.

  17. Dielectric properties and carbothermic reduction of zinc oxide and zinc ferrite by microwave heating.

    PubMed

    Omran, Mamdouh; Fabritius, Timo; Heikkinen, Eetu-Pekka; Chen, Guo

    2017-09-01

    This paper aims to study the dielectric properties and carbothermic reduction of zinc oxide (zincite, ZnO) and zinc ferrite (franklinite, ZnFe2O4) by microwave heating. To achieve this aim, the dielectric properties were measured with an open-ended coaxial method to understand the behaviour of the samples under microwave irradiation. The effects of microwave power, duration time and sample mass on the heating rate, and the effects of the stoichiometric amount of graphite on the reduction of ZnO and decomposition of ZnFe2O4 were investigated. The results show that ZnFe2O4 has significantly higher dielectric properties compared to ZnO. Generally, for both samples, the dielectric values at room temperature were quite low, indicating that both ZnO and ZnFe2O4 are poor microwave absorbers. It was found that the temperatures have a more significant effect on the imaginary permittivities than on the real permittivities. The heating rate showed that the sample temperature increased with increase in microwave power and sample mass. Using 700 W of microwave power and two times the stoichiometric amount of graphite, almost complete reduction of ZnO was achieved in 12 min, while ZnFe2O4 completely decomposed to zincite and wustite in 3 min.

  18. Phase Tuning of Nanostructured Gallium Oxide via Hybridization with Reduced Graphene Oxide for Superior Anode Performance in Li-Ion Battery: An Experimental and Theoretical Study.

    PubMed

    Patil, Sharad B; Kim, In Young; Gunjakar, Jayavant L; Oh, Seung Mi; Eom, Taedaehyeong; Kim, Hyungjun; Hwang, Seong-Ju

    2015-08-26

    The crystal phase of nanostructured metal oxide can be effectively controlled by the hybridization of gallium oxide with reduced graphene oxide (rGO) at variable concentrations. The change of the ratio of Ga2O3/rGO is quite effective in tailoring the crystal structure and morphology of nanostructured gallium oxide hybridized with rGO. This is the first example of the phase control of metal oxide through a change of the content of rGO hybridized. The calculations based on density functional theory (DFT) clearly demonstrate that the different surface formation energy and Ga local symmetry of Ga2O3 phases are responsible for the phase transition induced by the change of rGO content. The resulting Ga2O3-rGO nanocomposites show promising electrode performance for lithium ion batteries. The intermediate Li-Ga alloy phases formed during the electrochemical cycling are identified with the DFT calculations. Among the present Ga2O3-rGO nanocomposites, the material with mixed α-Ga2O3/β-Ga2O3/γ-Ga2O3 phase can deliver the largest discharge capacity with the best cyclability and rate characteristics, highlighting the importance of the control of Ga2O3/rGO ratio in optimizing the electrode activity of the composite materials. The present study underscores the usefulness of the phase-control of nanostructured metal oxides achieved by the change of rGO content in exploring novel functional nanocomposite materials.

  19. Characterization of zinc oxide and zinc ferrite doped with Ti or Cu as sorbents for hot gas desulphurization

    NASA Astrophysics Data System (ADS)

    Pineda, Miguel; Fierro, JoséL. G.; Palacios, JoséM.; Cilleruelo, Cristina; García, Enrique; Ibarra, JoséV.

    1997-09-01

    Three series of samples based on zinc oxide and zinc ferrite doped with copper or titanium oxides have been prepared in order to improve their performance as regenerable sorbents for hot gas desulphurization. In each series the oxide concentration was varied over a broad range to enhance the formation of different chemical species. The stability against reducing agents and the performance of these sorbents were studied elsewhere. The characterization of fresh, sulphided and regenerated samples was undertaken using XRD, FT-Raman and XPS techniques. The addition of Ti increased the stability of ZnO against reducing agents such as H2, up to an atomic ratio Ti/Zn= 0.5 through the formation of Zn2TiO4. Furthermore, the Ti excess is segregated as TiO2. The addition of Cu to zinc ferrite did not affect the stability but improved the sorbent performance enhancing the ferrite formation and migrating to the sorbent surface during the calcination and regeneration steps. The addition of Ti to zinc ferrite prevented its decomposition into the two component oxides below 600°C stabilizing the structure through the inclusion of Ti in the ferrite lattice. In the sulphiding process Fe, Zn and Cu oxides were converted into the lowest oxidation state sulphides that facilitated the sorbent regeneration during the regeneration process.

  20. pH-dependent growth of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Dutta, Joydeep

    2009-04-01

    Here we study the effect of pH variation on the dimension and morphology of zinc oxide (ZnO) nanorods grown through hydrothermal process at temperatures less than 100 °C. ZnO nanorods were grown on pre-seeded glass substrates using zinc nitrate hexahydrate as the source of Zn ions and hexamethylenetetramine as the source of hydroxyl ions. The pH of the reaction bath was found to change gradually from 6.4 to 7.3 in 5 h during the growth process. The growth of the ZnO nanorods was observed to be faster, both laterally and longitudinally, when the growth solution was in basic conditions. However, flower petal like ZnO nanostructures were obtained when the growth process was initiated in basic condition (pH 8-12), indicating that initial acidic conditions were required to obtain nanorods with well-defined hexagonal facets. ZnO is known to erode in acidic condition and the final dimension of the nanorods is determined by a competition between crystal growth and etching. ZnO nanorods of different dimensions, both laterally (diameters ranging from 220 nm to 1 μm) and longitudinally (lengths ranging from 1 to 5.6 μm) were successfully synthesized using the same concentration of zinc nitrate and hexamine in the reaction bath and the same growth duration of 5 h simply through appropriate control of the pH of the reactant solution between 6 and 7.3.

  1. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    NASA Astrophysics Data System (ADS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-01

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  2. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    SciTech Connect

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  3. Nano-rods of zinc oxide in nano-graphene

    NASA Astrophysics Data System (ADS)

    Ortiz, Pedro; Chavira, Elizabeth; Monroy, Marel; Elizalde, José; Santiago, Patricia; Sato, Roberto; Tejeda, Adriana; González, Guillermina; Novelo, Omar; Flores, Carlos

    2014-03-01

    It's of great interest to study the devices based on nano-ZnO and graphene, for their electromagnetic and optical properties to increase the efficiency of solar cells. The graphene multilayers synthesis was done by mechanosynthesis, grinding in a mechanical agate mortar. The zinc oxide nano-rods were synthesized from zinc acetate dihydrate, Ace, (Sigma Aldrich) and ethylene diamine, En, (Sigma Aldrich) with a 1:2 ratio of reagents En/Ace. The ZnO nano-rods in nano-tubes graphene were obtained by mechanosynthesis. The X-ray powder diffraction, shows the shift of C with PDF 12-0212 and ZnO, Zincite PDF 36-1451, both with hexagonal unit cell. The grain size and morphology of graphene (multilayers and nano-tubes), ZnO nano-rods and ZnO-graphene mixture (multilayers, nano-tubes) were observed by scanning electron microscope. Transmission electron microscope, corroborates shown in SEM. Raman spectroscopy, shows the shift of multilayer graphene and the ZnO nano-rods. In photoluminescence measurements, observe the change in intensity in the band defects. Magnetic properties characterization was carried out by Vibrating Sample Magnetometry. We conclude that graphite multilayers dislocated by cutting efforts, forming graphene nano-tubes and encapsulated ZnO nano-rods within graphene.

  4. Zinc oxide nanoparticles induce eosinophilic airway inflammation in mice.

    PubMed

    Huang, Kuo-Liang; Lee, Yi-Hsin; Chen, Hau-Inh; Liao, Huang-Shen; Chiang, Bor-Luen; Cheng, Tsun-Jen

    2015-10-30

    Zinc oxide nanoparticles (ZnO NPs) have been widely used in industry. The metal composition of PM2.5 might contribute to the higher prevalence of asthma. To investigate the effects of ZnO NPs on allergic airway inflammation, mice were first exposed to different concentrations of ZnO NPs (0.1 mg/kg, 0.5 mg/kg) or to a combination of ZnO NPs and chicken egg ovalbumin (OVA) by oropharyngeal aspiration on day 0 and day 7 and then were sacrificed 5 days later. The subsequent time course of airway inflammation in the mice after ZnO NPs exposure was evaluated on days 1, 7, and 14. To further determine the role of zinc ions, ZnCl2 was also administered. The inflammatory cell count, cytokine levels in the bronchoalveolar lavage fluid (BALF), and lung histopathology were examined. We found significant neutrophilia after exposure to high-dose ZnO NPs on day 1 and significant eosinophilia in the BALF at 7 days. However, the expression levels of the T helper 2 (Th2) cytokines IL-4, IL-5, and IL-13 increased significantly after 24h of exposure to only ZnO NPs and then decreased gradually. These results suggested that ZnO NPs could cause eosinophilic airway inflammation in the absence of allergens. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Oxidation kinetics of zinc sulfide: determination of intrinsic rate constant

    SciTech Connect

    Prabhu, G.M.

    1983-06-01

    An initial reaction rate study was done with the help of a thermogravimetric technique. Energy dispersive x-ray analyses on partially oxidized zinc sulfide pellets with a sintered porosity of 72.4% indicated flat sulfur intensity profiles within pellets reacted below 560/sup 0/C, which suggested a homogeneous reaction mechanism. Therefore, reaction temperatures below 600/sup 0/C were chosen for the reaction rate studies. Initial reaction rate studies on 72.4, 58.2, and 34.0% porous, cylindrical zinc sulfide pellets and the corresponding Arrhenius plot suggested chemical control in the temperature range from 480 to 565/sup 0/C. The corresponding intrinsic rate constant is correlated as k = 3.45 x 10/sup 17/ exp (- 86051/RT) cm/s. The variation in sulfur intensity within sintered pellets having a porosity of 72.4% that were reacted at temperatures above 560/sup 0/C indicated that the pore diffusion resistance gradually became comparable to the chemical reaction resistance leading to a mixed control mechanism above 570/sup 0/C. The critical temperature at which this shift occurred, increased with pellet porosity.

  6. Poly(vinylidene fluoride)/zinc oxide smart composite material

    NASA Astrophysics Data System (ADS)

    Öğüt, Erdem; Yördem, O. Sinan; Menceloğlu, Yusuf Z.; Papila, Melih

    2007-04-01

    This work aimed at fabrication and electromechanical characterization of a smart material system composed of electroactive polymer and ceramic materials. The idea of composite material system is on account of complementary characteristics of the polymer and ceramic for flexibility and piezoelectric activity. Our preliminary work included Polyvinylidene Fluoride (PVDF) as the flexible piezoelectric polymer, and Zinc Oxide (ZnO) as the piezoelectric ceramic brittle, but capable to respond strains without poling. Two alternative processes were investigated. The first process makes use of ZnO fibrous formation achieved by sintering PVA/zinc acetate precursor fibers via electrospinning. Highly brittle fibrous ZnO mat was dipped into a PVDF polymer solution and then pressed to form pellets. The second process employed commercial ZnO nanopowder material. The powder was mixed into a PVDF/acetone polymer solution, and the resultant paste was pressed to form pellets. The free standing composite pellets with electrodes on the top and bottom surfaces were then subjected to sinusoidal electric excitation and response was recorded using a fotonic sensor. An earlier work on electrospun PVDF fiber mats was also summarized here and the electromechanical characterization is reported.

  7. Different shades of oxide: from nanoscale wetting mechanisms to contact printing of gallium-based liquid metals.

    PubMed

    Doudrick, Kyle; Liu, Shanliangzi; Mutunga, Eva M; Klein, Kate L; Damle, Viraj; Varanasi, Kripa K; Rykaczewski, Konrad

    2014-06-17

    Gallium-based liquid metals are of interest for a variety of applications including flexible electronics, soft robotics, and biomedical devices. Still, nano- to microscale device fabrication with these materials is challenging because, despite having surface tension 10 times higher than water, they strongly adhere to a majority of substrates. This unusually high adhesion is attributed to the formation of a thin oxide shell; however, its role in the adhesion process has not yet been established. In this work, we demonstrate that, dependent on dynamics of formation and resulting morphology of the liquid metal-substrate interface, GaInSn adhesion can occur in two modes. The first mode occurs when the oxide shell is not ruptured as it makes contact with the substrate. Because of the nanoscale topology of the oxide surface, this mode results in minimal adhesion between the liquid metal and most solids, regardless of substrate's surface energy or texture. In the second mode, the formation of the GaInSn-substrate interface involves rupturing of the original oxide skin and formation of a composite interface that includes contact between the substrate and pieces of old oxide, bare liquid metal, and new oxide. We demonstrate that in this latter mode GaInSn adhesion is dominated by the intimate contact between new oxide and substrate. We also show that by varying the pinned contact line length using varied degrees of surface texturing, the adhesion of GaInSn in this mode can be either decreased or increased. Lastly, we demonstrate how these two adhesion modes limit microcontact printing of GaInSn patterns but can be exploited to repeatedly print individual sub-200 nm liquid metal drops.

  8. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    PubMed Central

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-01-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

  9. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  10. Near Field Imaging of Charge Transport in Gallium Nitride and Zinc Oxide Nanostructures

    DTIC Science & Technology

    2010-12-01

    their work is clear: research into nanostructures may one day result in significantly more efficient solar cells capable of producing energy at the...devices have enhanced the lives of people worldwide. Computers, televisions, telephones, the Internet, cellular phones, radios, solar cells , as...detector is a silicon avalanche photodiode (APD) that can detect wavelengths of light from 400 nm to 1060 nm with a peak quantum efficiency of 65

  11. Fabrication and characterization of zinc oxide and gallium nitride based sensors

    NASA Astrophysics Data System (ADS)

    Wang, Hung-Ta

    Pt-coated ZnO nanorods show a decrease of 8% resistance upon exposure to 500 ppm hydrogen in room temperature. This is a factor of two larger than that obtained with Pd; approximately 95% of the initial ZnO conductance was recovered within 20 s by exposing the nanorods to O2. This rapid and easy recoverability makes the ZnO nanorods suitable for ppm-level sensing at room temperature with low power consumption. Pt-gated AlGaN/GaN based high electron mobility transistors (HEMTs) showed that Schottky diode operation provides large relative sensitivity over a narrow range around turn-on voltage; the differential designed Schottky diodes with AlGaN/GaN hetero-structure was shown to provide robust detection of 1% H 2 in air at 25°C, which remove false alarms from ambient temperature variations; moreover, the use of TiB2-based Ohmic contacts on Pt-Schottky contacted AlGaN/GaN based hydrogen sensing diodes was shown to provide more stable operation. Thioglycolic acid functionalized Au-gated AlGaN/GaN based HEMTs were used to detect mercury (II) ions. A fast detection (>5 seconds) was achieved. This is the shortest response ever reported. The sensors were able to detect mercury (II) ion concentration as low as 10-7 M. The sensors showed an excellent sensing selectivity of more than 100 of detecting mercury ions over sodium, magnesium, and lead ions, but not copper. AlGaN/GaN based HEMTs were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The HEMT gate region was coated with KIM-1 antibodies and the HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline (PBS) solution. The limit of detection (LOD) was 1ng/ml using a 20 mum x50 mum gate sensing area. This approach shows a potential for both preclinical and clinical disease diagnosis with accurate, rapid, noninvasive, and high throughput capabilities. The rest of this dissertation includes ZnO band edge electroluminescence from N+-implanted ZnO bulk, and the investigation of cryogenic gold Schottky contact on GaAs for enhancing device thermal stability.

  12. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    SciTech Connect

    Mistry, Bhaumik V. Joshi, U. S.

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  13. Zinc

    MedlinePlus

    ... zinc deficient infants and children, for treating the common cold and recurrent ear infections, the flu, upper respiratory ... be sprayed in the nostrils for treating the common cold. Zinc sulfate is used in eye drop solutions ...

  14. The zinc electrode - Its behaviour in the nickel oxide-zinc accumulator

    NASA Astrophysics Data System (ADS)

    Certain aspects of zinc electrode reaction and behavior are investigated in view of their application to batteries. The properties of the zinc electrode in a battery system are discussed, emphasizing porous structure. Shape change is emphasized as the most important factor leading to limited battery cycle life. It is shown that two existing models of shape change based on electroosmosis and current distribution are unable to consistently describe observed phenomena. The first stages of electrocrystallization are studied and the surface reactions between the silver substrate and the deposited zinc layer are investigated. The reaction mechanism of zinc and amalgamated zinc in an alkaline electrolyte is addressed, and the batter system is studied to obtain information on cycling behavior and on the shape change phenomenon. The effect on cycle behavior of diferent amalgamation techniques of the zinc electrode and several additives is addressed. Impedance measurements on zinc electrodes are considered, and battery behavior is correlated with changes in the zinc electrode during cycling.

  15. Zinc oxide nanoparticles as a substitute for zinc oxide or colistin sulfate: Effects on growth, serum enzymes, zinc deposition, intestinal morphology and epithelial barrier in weaned piglets.

    PubMed

    Wang, Chao; Zhang, Ligen; Su, Weipeng; Ying, Zhixiong; He, Jintian; Zhang, Lili; Zhong, Xiang; Wang, Tian

    2017-01-01

    The objective of this study was to evaluate effects of zinc oxide nanoparticles (nano-ZnOs) as a substitute for colistin sulfate (CS) and/or zinc oxide (ZnO) on growth performance, serum enzymes, zinc deposition, intestinal morphology and epithelial barrier in weaned piglets. A total of 216 crossbred Duroc×(Landrace×Yorkshire) piglets weaned at 23 days were randomly assigned into 3 groups, which were fed with basal diets supplemented with 20 mg/kg CS (CS group), 20mg/kg CS+3000 mg/kg ZnO (CS+ZnO group), and 1200 mg/kg nano-ZnOs (nano-ZnO group) for 14 days. Results indicated that compared to CS group, supplementation of 1200 mg/kg nano-ZnOs (about 30 nm) significantly increased final body weight and average daily gain, and 3000 mg/kg ZnO plus colistin sulfate significantly increased average daily gain and decreased diarrhea rate in weaned piglets. There was no significant difference in growth performance and diarrhea rate between nano-ZnO and CS+ZnO groups. Supplementation of nano-ZnOs did not affect serum enzymes (glutamic oxalacetic transaminase, glutamic-pyruvic transaminase, and lactate dehydrogenase), but significantly increased plasma and tissue zinc concentrations (liver, tibia), improved intestinal morphology (increased duodenal and ileal villus length, crypt depth, and villus surface), enhanced mRNA expression of ZO-1 in ileal mucosa, and significantly decreased diamine oxidase activity in plasma, total aerobic bacterial population in MLN as compared to CS group. Effects of nano-ZnOs on serum enzymes, intestinal morphology, and mRNA expressions of tight junction were similar to those of high dietary ZnO plus colistin sulfate, while nano-ZnOs significantly reduced zinc concentrations of liver, tibia, and feces, and decreased total aerobic bacterial population in MLN as compared to CS+ZnO group. These results suggested that nano-ZnOs (1200 mg/kg) might be used as a substitute for colistin sulfate and high dietary ZnO in weaned piglets.

  16. Electrophoretic deposition of zinc oxide on graphite drawn on paper

    NASA Astrophysics Data System (ADS)

    Sebastian, C. S.; Herrera, M. U.; Tapia, A. K. G.

    2017-04-01

    Flexible substrates have many promising applications in sensing, electronics, and electromagnetic shielding and energy storage among many others. Paper can serve as substrate for these kinds of technologies offering a cheaper alternative. In this study, Zinc oxide (ZnO) was successfully deposited on graphite drawn on paper using electrophoretic deposition (EPD). Graphite from commercially-available pencil was drawn on paper. Graphite drawn on paper was used as electrodes for the EPD process. High-voltage power supply was used as source while ground ZnO in acetone was used as suspension in the deposition process. Scanning electron microscopy (SEM) and Energy dispersive x-ray spectroscopy (EDX) results reveal the deposition of ZnO on Graphite. In addition, the electrical contact of the ZnO-graphite interface showed Ohmic behaviour by two-point probe method.

  17. Stability of zinc oxide nanofluids prepared with aggregated nanocrystalline powders.

    PubMed

    Leonard, J P; Chung, S J; Nettleship, I; Soong, Y; Martello, D V; Chyu, M K

    2008-12-01

    Aqueous zinc oxide (ZnO) suspensions were prepared using a two-step preparation method in which an aggregated nanocrystalline ZnO powder was dispersed in water using a polyelectrolyte. The fluid showed anomalously high thermal conductivity when compared with the Maxwell and Hamilton-Crosser predictions. However, analysis of the particle size distribution showed that the fluid contained aggregated 20 nm crystallites of ZnO with a high volume fraction of particles larger than 100 nm. Sedimentation experiments revealed that particles settled out of the stationary fluid over times ranging from 0.1 hours to well over 10,000 hours. The size of the particles remaining in suspension agreed well with predictions made using Stoke's law, suggesting flocculation was not occurring in the fluids. Finally, a new concept of nanofluid stability is introduced based on the height of the fluid, sedimentation, Brownian motion and the kinetic energy of the particles.

  18. Doped zinc oxide window layers for dye sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Kumar, Vinod; Singh, Neetu; Kumar, Vijay; Purohit, L. P.; Kapoor, Avinashi; Ntwaeaborwa, Odireleng M.; Swart, Hendrik C.

    2013-10-01

    The present paper reports the fabrication of dye sensitized solar cell (DSSC), where boron doped ZnO (BZO) and aluminum-boron co-doped ZnO (AZB) thin films were used as front window electrodes. The highly crystalline zinc oxide (ZnO) nanoparticles (NPs) synthesized by the sol-gel route were used as host material for the dye. The efficiencies of the DSSCs formed using the BZO and AZB as window layers were obtained to be 1.56 and 1.84%, respectively. The enhanced efficiency in the case of an AZB window layer based DSSC is attributed to the increase in conductivity induced by co-doping of Al and B and an increase in the number of conducting pathways between the window layer and NPs provided by the nanorods. This facilitates a new approach in the window layer (doped ZnO) for DSSC application.

  19. Gas sensing performance of nano zinc oxide sensors

    NASA Astrophysics Data System (ADS)

    Sharma, Shiva; Chauhan, Pratima

    2016-04-01

    We report nano Zinc Oxide (ZnO) synthesized by sol-gel method possessing the crystallite size which varies from 25.17 nm to 47.27 nm. The Scanning electron microscope (SEM) image confirms the uniform distribution of nanograins with high porosity. The Energy dispersion X-ray (EDAX) spectrum gives the atomic composition of Zn and O in ZnO powders and confirms the formation of nano ZnO particles. These factors reveals that Nano ZnO based gas sensors are highly sensitive to Ammonia gas (NH3) at room temperature, indicating the maximum response 86.8% at 800 ppm with fast response time and recovery time of 36 sec and 23 sec respectively.

  20. Photophysical Behaviors of Single Fluorophores Localized on Zinc Oxide Nanostructures

    PubMed Central

    Fu, Yi; Zhang, Jian; Lakowicz, Joseph R.

    2012-01-01

    Single-molecule fluorescence spectroscopy has now been widely used to investigate complex dynamic processes which would normally be obscured in an ensemble-averaged measurement. In this report we studied photophysical behaviors of single fluorophores in proximity to zinc oxide nanostructures by single-molecule fluorescence spectroscopy and time-correlated single-photon counting (TCSPC). Single fluorophores on ZnO surfaces showed enhanced fluorescence brightness to various extents compared with those on glass; the single-molecule time trajectories also illustrated pronounced fluctuations of emission intensities, with time periods distributed from milliseconds to seconds. We attribute fluorescence fluctuations to the interfacial electron transfer (ET) events. The fluorescence fluctuation dynamics were found to be inhomogeneous from molecule to molecule and from time to time, showing significant static and dynamic disorders in the interfacial electron transfer reaction processes. PMID:23109903

  1. Gas sensing performance of nano zinc oxide sensors

    SciTech Connect

    Sharma, Shiva Chauhan, Pratima

    2016-04-13

    We report nano Zinc Oxide (ZnO) synthesized by sol-gel method possessing the crystallite size which varies from 25.17 nm to 47.27 nm. The Scanning electron microscope (SEM) image confirms the uniform distribution of nanograins with high porosity. The Energy dispersion X-ray (EDAX) spectrum gives the atomic composition of Zn and O in ZnO powders and confirms the formation of nano ZnO particles. These factors reveals that Nano ZnO based gas sensors are highly sensitive to Ammonia gas (NH{sub 3}) at room temperature, indicating the maximum response 86.8% at 800 ppm with fast response time and recovery time of 36 sec and 23 sec respectively.

  2. Interpretation of optical conductivity of zinc oxide nanowires

    SciTech Connect

    Choudhary, K. K.; Kaurav, N.

    2015-07-31

    The frequency dependent optical response of Zinc Oxide (ZnO) nanowires is theoretically analyzed within the two component schemes: one is the motion of coherent Drude electrons within the ZnO nanowire and the other is incoherent motion of electrons from one nanowire to other. The model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions. The coherent Drude carriers form a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared region. However, the hopping of carriers from one nanowire to other (incoherent motion of electrons) yields a peak value in the optical conductivity around mid infrared region. It is found that both the Drude and hopping carriers will contribute to the optical process of conduction in ZnO nanowire.

  3. Nanosized zinc oxide particles induce neural stem cell apoptosis

    NASA Astrophysics Data System (ADS)

    Deng, Xiaoyong; Luan, Qixia; Chen, Wenting; Wang, Yanli; Wu, Minghong; Zhang, Haijiao; Jiao, Zheng

    2009-03-01

    Given the intensive application of nanoscale zinc oxide (ZnO) materials in our life, growing concerns have arisen about its unintentional health and environmental impacts. In this study, the neurotoxicity of different sized ZnO nanoparticles in mouse neural stem cells (NSCs) was investigated. A cell viability assay indicated that ZnO nanoparticles manifested dose-dependent, but no size-dependent toxic effects on NSCs. Apoptotic cells were observed and analyzed by confocal microscopy, transmission electron microscopy examination, and flow cytometry. All the results support the viewpoint that the ZnO nanoparticle toxicity comes from the dissolved Zn2+ in the culture medium or inside cells. Our results highlight the need for caution during the use and disposal of ZnO manufactured nanomaterials to prevent the unintended environmental and health impacts.

  4. Size-dependent antimicrobial response of zinc oxide nanoparticles.

    PubMed

    Palanikumar, Loganathan; Ramasamy, Sinna Nadar; Balachandran, Chandrasekaran

    2014-06-01

    Antibacterial and antifungal activities of zinc oxide nanoparticles (ZnO NPs) were investigated against infectious microorganisms. ZnO NPs were prepared by wet chemical precipitation method varying the pH values. Particle size and morphology of the as-prepared ZnO powders were characterised by X-ray diffraction, Fourier transform infrared spectroscopy and transmission electron microscope. The zone of inhibition by NPs ranged from 0 to 17 mm. The lowest minimum inhibitory concentration value of NPs is 25 µg.ml(-1) against Staphylococcus epidermidis. These studies demonstrate that ZnO NPs have wide range of antimicrobial activities towards various microorganisms. The results obtained in the authors' study indicate that the inhibitory efficacy of ZnO NPs is significantly dependent on its chosen concentration and size. Significant inhibition in antibacterial response was observed for S. epidermidis when compared with control antibiotic.

  5. Gold coated zinc oxide nanonecklaces as a SERS substrate.

    PubMed

    He, Lili; Shi, Jian; Sun, Xin; Lin, Mengshi; Yu, Ping; Li, Hao

    2011-04-01

    Faceted zinc oxide nanonecklace (ZnO NN) arrays were grown on r-plane sapphires along one direction (ZnO [0001] II sapphire [10-11] and ZnO (-12-10) II sapphire (01-12)) using chemical vapor deposition. After coated with 45 nm gold films and annealed at 250 degrees C for 30 seconds, the coated ZnO NNs exhibit satisfactory and stable surface enhanced Raman scattering (SERS) effects when tested with melamine and other chemicals. The limit of detection of melamine is 10(-5) mol/L and the analytical enhancement factor is 10(4), which is competitive to a commercial substrate. This study indicates that gold coated ZnO NN substrates have a great potential as SERS-active substrates in rapid detection of trace amount food contaminants such as melamine and other chemicals.

  6. Green Approach for Fabrication and Applications of Zinc Oxide Nanoparticles

    PubMed Central

    Smita, Kumari; Cumbal, Luis

    2014-01-01

    Zinc oxide nanoparticles (ZnO-NPs) are known to be one of the multifunctional inorganic compounds which are widely used in everyday applications. This study aims to fabricate ZnO-NPs using grapefruit (Citrus paradisi) peel extract with particle size ranging from 12 to 72 nm. Structural, morphological, and optical properties of the synthesized nanoparticles have been characterized by using UV-Vis spectrophotometer, TEM, DLS, and FTIR analysis. They show the significant photocatalytic degradation efficiency (>56%, 10 mg/L, 6 h) against methylene blue and antioxidant efficacy (≥80% for 1.2 mM) against 1,1-diphenyl-2-picrylhydrazyl. From the results obtained it is suggested that green ZnO-NPs could be used effectively in environmental safety applications and also can address future medical concerns. PMID:25374484

  7. Functionalization of textiles with silver and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pulit-Prociak, Jolanta; Chwastowski, Jarosław; Kucharski, Arkadiusz; Banach, Marcin

    2016-11-01

    The paper presents a method for functionalization of textile materials using fabric dyes modified with silver or zinc oxide nanoparticles. Embedding of these nanoparticles into the structure of other materials makes that the final product is characterized by antimicrobial properties. Indigo and commercially available dye were involved in studies. It is worth to note that silver nanoparticles were obtained in-situ in the reaction of preparing indigo dye and in the process of preparing commercial dye baths. Such a method allows reducing technological steps. The modified dyes were used for dyeing of cotton fibers. The antimicrobial properties of final textile materials were studied. Saccharomyces cerevisiae strain was used in microbiological test. The results confirmed biocidal activity of prepared materials.

  8. Marginal zinc deficiency increases oxidative DNA damage in the prostate after chronic exercise

    PubMed Central

    Song, Yang; Elias, Valerie; Loban, Andrei; Scrimgeour, Angus G.; Ho, Emily

    2014-01-01

    Approximately 12% of Americans do not consume the recommended level of zinc and could be at risk for marginal zinc deficiency. Zinc functions in antioxidant defense and DNA repair and could be important for prostate health. We hypothesized that marginal zinc deficiency sensitizes the prostate to oxidative stress and DNA damage. Rats were fed a zinc-adequate (ZA; 30 mg Zn/kg) or marginally zinc-deficient (MZD; 5–6 mg Zn/kg) diet for 6 weeks. MZD increased p53 and PARP expression but no change in 8-hydroxy-2′-deoxyguanosine levels was detected. To examine the susceptibility to exogenous oxidative stress, rats fed a ZA or MZD diet were assigned to exercising (EXE) or sedentary (SED) groups for 9 weeks. MZD or EXE alone did not affect oxidative DNA damage in the prostate; however, combined MZD + EXE increased DNA damage in the dorsolateral lobe. PARP and p53 expression was not further induced with MZD + EXE, suggesting that MZD interferes with DNA repair responses to stress. Finally, the addition of phytase to the MZD diet successfully restored zinc levels in the prostate and decreased DNA damage back to ZA levels. Overall, this study suggests that marginal zinc deficiency sensitizes the prostate to oxidative stress and demonstrates the importance of maintaining optimal zinc nutrition in physically active populations. PMID:19836448

  9. Characterizing titanium dioxide and zinc oxide nanoparticles in sunscreen spray.

    PubMed

    Lu, P J; Cheng, W L; Huang, S C; Chen, Y P; Chou, H K; Cheng, H F

    2015-12-01

    Numerous commercial products contain titanium dioxide (TiO2 ) and zinc oxide (ZnO) nanoparticles (NPs); however, many of these are not labelled as containing NPs. This study sought to develop an effective means of characterizing TiO2 and ZnO NPs in sunscreen sprays, including the size, shape and composition of the particles as well as their aggregation/agglomeration characteristics. Transmission electron microscopy (TEM) coupled with a window-type microchip K-kit/copper grid and X-ray diffraction (XRD) was used to characterize the oxide NPs. TME pre-treatment was performed using two approaches: using a conventional copper grid (requiring dilution) and using a K-kit (not requiring dilution). The use of K-kit in conjunction with XRD makes it possible to obtain direct measurements from samples that have not undergone pre-treatment, which could otherwise alter the nature of the samples, such as the degree of agglomeration. XRD was used to obtain information related to particle size and crystal structure. A strong correlation was observed between XRD and TEM measurements. The proposed measurement methods were shown to be highly effective in the characterization of oxide NPs in sunscreen sprays, providing consistent information related to NPs and their interactions in the formulations. © 2015 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

  10. Zinc oxide tetrapods as efficient photocatalysts for organic pollutant degradation

    NASA Astrophysics Data System (ADS)

    Liu, Fangzhou; Leung, Yu Hang; Djurisić, Aleksandra B.; Liao, Changzhong; Shih, Kaimin

    2014-03-01

    Bisphenol A (BPA) and other organic pollutants from industrial wastewater have drawn increasing concern in the past decades regarding their environmental and biological risks, and hence developing strategies of effective degradation of BPA and other organic pollutants is imperative. Metal oxide nanostructures, in particular titanium oxide (TiO2) and zinc oxide (ZnO), have been demonstrated to exhibit efficient photodegradation of various common organic dyes. ZnO tetrapods are of special interest due to their low density of native defects which consequently lead to lower recombination losses and higher photocatalytic efficiency. Tetrapods can be obtained by relatively simple and low-cost vapor phase deposition in large quantity; the micron-scale size would also be advantageous for catalyst recovery. In this study, the photodegradation of BPA with ZnO tetrapods and TiO2 nanostructures under UV illumination were compared. The concentration of BPA dissolved in DI water was analyzed by high-performance liquid chromatography (HPLC) at specified time intervals. It was observed that the photocatalytic efficiency of ZnO tetrapods eventually surpassed Degussa P25 in free-standing form, and more than 80% of BPA was degraded after 60 min. Photodegradation of other organic dye pollutants by tetrapods and P25 were also examined. The superior photocatalytic efficiency of ZnO tetrapods for degradation of BPA and other organic dye pollutants and its correlation with the material properties were discussed.

  11. Prenatal development toxicity study of zinc oxide nanoparticles in rats

    PubMed Central

    Hong, Jeong-Sup; Park, Myeong-Kyu; Kim, Min-Seok; Lim, Jeong-Hyeon; Park, Gil-Jong; Maeng, Eun-Ho; Shin, Jae-Ho; Kim, Meyoung-Kon; Jeong, Jayoung; Park, Jin-A; Kim, Jong-Choon; Shin, Ho-Chul

    2014-01-01

    This study investigated the potential adverse effects of zinc oxide nanoparticles ([ZnOSM20(+) NPs] zinc oxide nanoparticles, positively charged, 20 nm) on pregnant dams and embryo–fetal development after maternal exposure over the period of gestational days 5–19 with Sprague-Dawley rats. ZnOSM20(+) NPs were administered to pregnant rats by gavage at 0, 100, 200, and 400 mg/kg/day. All dams were subjected to a cesarean section on gestational day 20, and all of the fetuses were examined for external, visceral, and skeletal alterations. Toxicity in the dams manifested as significantly decreased body weight after administration of 400 mg/kg/day NPs; reduced food consumption after administration of 200 and 400 mg/kg/day NPs; and decreased liver weight and increased adrenal glands weight after administration of 400 mg/kg/day NPs. However, no treatment-related difference in: number of corpora lutea; number of implantation sites; implantation rate (%); resorption; dead fetuses; litter size; fetal deaths and placental weights; and sex ratio were observed between the groups. On the other hand, significant decreases between treatment groups and controls were seen for fetal weights after administration of 400 mg/kg/day NPs. Morphological examinations of the fetuses demonstrated significant differences in incidences of abnormalities in the group administered 400mg/kg/day. Meanwhile, no significant difference was found in the Zn content of fetal tissue between the control and high-dose groups. These results showed that oral doses for the study with 15-days repeated of ZnOSM20(+) NPs were maternotoxic in the 200 mg/kg/day group, and embryotoxic in the 400 mg/kg/day group. PMID:25565834

  12. Fabrication and characterization of zinc oxide based rib waveguide

    NASA Astrophysics Data System (ADS)

    Gioffrè, M.; Gagliardi, M.; Casalino, M.; Coppola, G.; Iodice, M.; Della Corte, F.

    2007-02-01

    In this work we investigate the possibility to use Zinc Oxide (ZnO) thin films, deposited by RF magnetron sputtering, for the realization of integrated optical structures working at 1550 nm. Structural properties of sputtered zinc oxide thin films were studied by means of X-ray Diffraction (XRD) measurements, while optical properties were investigated by spectrophotometry and Spectroscopic Ellipsometry (SE). In particular, ellipsometric measurements allowed to determine the dispersion law of the ZnO complex refractive index (see manuscript) = n - jk through the multilayer modeling using Tauc-Lorentz (TL) dispersion model. We have found a preferential c-axis growth of ZnO films, with slightly variable deposition rates from 2.5 to 3.8 Å/s. Conversely, the refractive index exhibits, from UV to near IR, a considerable and almost linear variation when the oxygen flux value in the deposition chamber varies from 0 to 10 sccm. In order to realize a waveguide structure, a 3-μm-thick ZnO film was deposited onto silicon single crystal substrates, where a 0.5-μm-thick thermal SiO II buffer layer was previously realized, acting as lower cladding. Dry and wet chemical etching processes have been investigated to achieve controllable etching rate and step etching profile, with the aim to realize an optical rib waveguide. The etched surfaces were inspected using scanning electron microscopy (SEM) and optical microscopy. Moreover, we carried out the experimental measurements of the fringes pattern and Free Spectral Range (FSR) of an integrated Fabry- Perot etalon, obtained by cleaving of a single mode rib waveguide.

  13. A comprehensive toxicity study of zinc oxide nanoparticles versus their bulk in Wistar rats: Toxicity study of zinc oxide nanoparticles.

    PubMed

    Srivastav, Anurag Kumar; Kumar, Mahadeo; Ansari, Nasreen Ghazi; Jain, Abhishek Kumar; Shankar, Jai; Arjaria, Nidhi; Jagdale, Pankaj; Singh, Dhirendra

    2016-12-01

    The purpose of this study was to characterize the zinc oxide nanoparticles (ZnO-NPs) and their bulk counterpart in suspensions and to access the impact of their acute oral toxicity at doses of 300 and 2000 mg/kg in healthy female Wistar rats. The hematological, biochemical, and urine parameters were accessed at 24 and 48 h and 14 days posttreatment. The histopathological evaluations of tissues were also performed. The distribution of zinc content in liver, kidney, spleen, plasma, and excretory materials (feces and urine) at 24 and 48 h and 14 days posttreatment were accessed after a single exposure at dose of 2000 mg/kg body weight. The elevated level of alanine amino transferase, alkaline phosphatase, lactate dehydrogenase, and creatinine were observed in ZnO-NPs at a dose of 2000 mg/kg at all time points. There was a decrease in iron levels in all the treated groups at 24 h posttreatment as compared to control groups but returned to their normal level at 14 days posttreatment. The hematological parameters red blood cells, hemoglobin, hematocrit, platelets, and haptoglobin were reduced at 48 h posttreatment at a dose of 2000 mg/kg ZnO-NPs and showed hemolytic condition. All the treated groups were comparable to control group at the end of 14 days posttreatment. The zinc concentration in the kidney, liver, plasma, feces, and urine showed a significant increase in both groups as compared to control. This study explained that ZnO-NPs produced more toxicological effect as compared to their bulk particles as evidenced through alteration in some hemato-biochemical parameters and with few histopathological lesions in liver and kidney tissues. © The Author(s) 2016.

  14. Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

    2016-01-01

    In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm2 V-1 s-1 and 2.8×1017 cm-3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274-0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

  15. Effect of morphology and solvent on two-photon absorption of nano zinc oxide

    SciTech Connect

    Kavitha, M.K.; Haripadmam, P.C.; Gopinath, Pramod; Krishnan, Bindu; John, Honey

    2013-05-15

    Highlights: ► ZnO nanospheres and triangular structures synthesis by novel precipitation technique. ► The effect of precursor concentration on the size and shape of nano ZnO. ► Open aperture Z-scan measurements of the ZnO nanoparticle dispersions. ► Nanospheres exhibit higher two photon absorption coefficient than triangular nanostructures. ► Nanospheres dispersed in water exhibit higher two photon absorption coefficient than its dispersion in 2-propanol. - Abstract: In this paper, we report the effect of morphology and solvent on the two-photon absorption of nano zinc oxide. Zinc oxide nanoparticles in two different morphologies like nanospheres and triangular nanostructures are synthesized by novel precipitation technique and their two-photon absorption coefficient is measured using open aperture Z-scan technique. Experimental results show that the zinc oxide nanospheres exhibit higher two-photon absorption coefficient than the zinc oxide triangular nanostructures. The zinc oxide nanospheres dispersed in water exhibit higher two-photon absorption coefficient than that of its dispersion in 2-propanol. The zinc oxide nanospheres dispersed in water shows a decrease in two-photon absorption coefficient with an increase in on-axis irradiance. The result confirms the dependence of shape and solvent on the two-photon absorption of nano zinc oxide.

  16. Improving electrical properties of sol-gel derived zinc oxide thin films by plasma treatment

    NASA Astrophysics Data System (ADS)

    Talukder, Al-Ahsan; Pokharel, Jyotshna; Shrestha, Maheshwar; Fan, Qi H.

    2016-10-01

    Being a direct and wide bandgap semiconductor, zinc oxide is a suitable material for various optoelectronic applications. These applications require tuning and controlling over the electrical and optical properties of zinc oxide films. In this work, zinc oxide thin films were prepared by a solution method that led to oriented crystal growth along (002) plane. The zinc oxide thin films were treated with oxygen, hydrogen, and nitrogen plasmas. The films were characterized to reveal the effects of plasma treatments on transmittance, crystallinity, carrier density, carrier mobility, and electrical resistivity. Oxygen plasma treatment improved the crystallinity of the zinc oxide thin film without affecting the film's transmittance. Hydrogen plasma treatments were found very effective in improving the electrical conductivity sacrificing the film's transmittance. Nitrogen plasma treatment led to improved electrical conductivity without compromising the crystallinity and optical transmittance. Sequential oxygen, hydrogen, and nitrogen plasma treatments significantly reduced the resistivity of zinc oxide thin films by over two orders and maintained the transmittance close to the as-deposited films of ˜80% in visible wavelength range. This is the first work on the improvement of conductivity of solution-based zinc oxide films using the plasma treatment.

  17. Texture and Topography Analysis of Doxycycline Hyclate Thermosensitive Systems Comprising Zinc Oxide

    PubMed Central

    Phaechamud, T.; Mahadlek, J.; Charoenteeraboon, J.

    2013-01-01

    To characterize the thermal behavior and texture analysis of doxycycline hyclate thermosensitive gels developed for periodontitis treatment containing zinc oxide prepared by using poloxamer (Lutrol® F127) as polymeric material and N-methyl pyrrolidone was used as cosolvent. The thermosensitive gel comprising doxycycline hyclate, Lutrol® F127, and N-methyl pyrrolidone were characterized for the thermal behavior and texture analysis. The topography of the system after the dissolution test was characterized with scanning electron microscope. Differential scanning calorimetric thermogram exhibited the endothermic peaks in the systems containing high amount of N-methyl pyrrolidone in solvent. The sol-gel transition temperature of the systems decreased as the zinc oxide amount was increased. The addition of doxycycline hyclate, zinc oxide, and N-methyl pyrrolidone affected the syringeability of systems. The addition of zinc oxide into the doxycycline hyclate-Lutrol® F127 systems decreased the diameter of inhibition zone against Staphylococcus aureus, Escherichia coli, and Candida albicans since zinc oxide decreased the diffusion and prolonged release of doxycycline hyclate. From scanning electron microscope analysis, the porous surface of 20% w/w Lutrol® F127 system was notably different from that of gel comprising doxycycline hyclate which had interconnected pores and smooth surfaces. The number of pores was decreased with increasing zinc oxide and the porous structure was smaller and more compact. Therefore, the addition of zinc oxide could increase the syringeability of doxycycline hyclate-Lutrol® F127 system with the temperature dependence. Zinc oxide decreased inhibition zone against test microbes because of prolongation of doxycycline hyclate release and reduced size of continuous cells. Furthermore, zinc oxide also increased the compactness of wall surfaces of Lutrol® F127. PMID:24302791

  18. Physiologically based pharmacokinetic modeling of zinc oxide nanoparticles and zinc nitrate in mice

    PubMed Central

    Chen, Wei-Yu; Cheng, Yi-Hsien; Hsieh, Nan-Hung; Wu, Bo-Chun; Chou, Wei-Chun; Ho, Chia-Chi; Chen, Jen-Kun; Liao, Chung-Min; Lin, Pinpin

    2015-01-01

    Zinc oxide nanoparticles (ZnO NPs) have been widely used in consumer products, therapeutic agents, and drug delivery systems. However, the fate and behavior of ZnO NPs in living organisms are not well described. The purpose of this study was to develop a physiologically based pharmacokinetic model to describe the dynamic interactions of 65ZnO NPs in mice. We estimated key physicochemical parameters of partition coefficients and excretion or elimination rates, based on our previously published data quantifying the biodistributions of 10 nm and 71 nm 65ZnO NPs and zinc nitrate (65Zn(NO3)2) in various mice tissues. The time-dependent partition coefficients and excretion or elimination rates were used to construct our physiologically based pharmacokinetic model. In general, tissue partition coefficients of 65ZnO NPs were greater than those of 65Zn(NO3)2, particularly the lung partition coefficient of 10 nm 65ZnO NPs. Sensitivity analysis revealed that 71 nm 65ZnO NPs and 65Zn(NO3)2 were sensitive to excretion and elimination rates in the liver and gastrointestinal tract. Although the partition coefficient of the brain was relative low, it increased time-dependently for 65ZnO NPs and 65Zn(NO3)2. The simulation of 65Zn(NO3)2 was well fitted with the experimental data. However, replacing partition coefficients of 65ZnO NPs with those of 65Zn(NO3)2 after day 7 greatly improved the fitness of simulation, suggesting that ZnO NPs might decompose to zinc ion after day 7. In this study, we successfully established a potentially predictive dynamic model for slowly decomposed NPs. More caution is suggested for exposure to 65ZnO NPs <10 nm because those small 65ZnO NPs tend to accumulate in the body for a relatively longer time than 71 nm 65ZnO NPs and 65Zn(NO3)2 do. PMID:26491297

  19. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    NASA Astrophysics Data System (ADS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei, Wei; Jin, Chunming; Narayan, Roger J.

    2009-03-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices.

  20. Thermal Degradation of Single Crystal Zinc Oxide and the Growth of Nanostructures

    SciTech Connect

    Saw, K. G.; Tan, G. L.; Hassan, Z.; Yam, F. K.; Ng, S. S.

    2010-07-07

    Heat treatment of (0001) single crystal zinc oxide (ZnO) seems to degrade the surface morphology at high temperature. The degradation, however, does not suppress the growth of ZnO nanostructures on selective regions of the single crystal ZnO that have been sputtered with metallic zinc (Zn) and annealed at 800 degree sign C. On the uncoated regions, no growth occurs but the presence of pits suggests material loss from the surface. The formation of ZnO nanostructures on the selective regions could be aided by the preferential loss of oxygen as well as zinc suboxides from the uncoated regions. Indirect evidence of the role of oxygen and zinc suboxides can be inferred from the formation of nickel zinc oxide Ni{sub 0.9}Zn{sub 0.1}O and nickel oxide NiO{sub 2} when Zn is replaced by Ni and annealed under similar conditions.

  1. Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Yi

    Gallium Nitride (GaN) is one of most promising semiconductor materials for high power, high temperature and high frequency applications. Due to the lack of native substrates for homoepitaxial growth, GaN electronic devices have been conventionally fabricated on epitaxial GaN layers grown on foreign substrates, mostly sapphire. This scheme complicates the fabrication process and compromises the device performance due to the large amount of native defects within the heteroepitaxial layer. In order to fabricate devices with improved performance and simplified fabrication processes, it is desirable to utilize high quality bulk GaN substrates. Recent developments in Hydride Vapor Phase Epitaxy (HVPE) technology have enabled the successful growth of free-standing GaN wafers with very low dislocation densities. This dissertation reports some developments in the device fabrication, performance and simulation based on bulk GaN substrates. We have fabricated vertical geometry Schottky diodes with a full backside ohmic contact using a bulk GaN substrate. The absence of the sapphire substrate, improved ohmic contact scheme and the vertical transport mode greatly enhance the forward current conduction of the bulk GaN Schottky diode. The device also displays a high reverse breakdown voltage and ultrafast reverse recovery characteristics. The low dislocation density of the substrate allows the fabrication of Schottky-type ultraviolet photodetectors with ultralow dark currents. The large band gap of GaN provides the intrinsic "visible blindness" of the UV photodetector. The device displays a reasonably high responsivity and a good linearity of photocurrent with UV irradiance. We have also fabricated MOS capacitors using a thermally oxidized bulk GaN substrate. The thermal gallium oxide is characterized and its oxidation mechanism and etching process are explored. The thermal grown Ga2O 3/GaN interface displays a relatively lower interface density of state as compared to the

  2. Zinc oxide nanowires on carbon microfiber as flexible gas sensor

    NASA Astrophysics Data System (ADS)

    Tonezzer, M.; Lacerda, R. G.

    2012-03-01

    In the past years, zinc oxide nanowires (ZnO NWs) have been proven to be an excellent material for gas sensors. In this work, we used ZnO nanowires in a novel architecture integrated on a carbon microfiber (μC) textile. This innovative design permits us to obtain mechanical flexibility, while the absence of any lithographic technique allows a large-area and low-cost fabrication of gas sensors. The performances of the devices are investigated for both oxidizing and reducing gases. The nano-on-micro structure of the sensor provides a high surface-to-volume ratio, leading to a fast and intense response for both oxygen (O2) and hydrogen (H2) gases. The sensor response has an optimum temperature condition at 280 °C with a response value of 10 for oxygen and 11 for hydrogen. The limit of detection (LoD) has been found to be 2 and 4 ppm for oxygen and hydrogen, respectively. Additionally, the sensor response and recovery time is small being less than 10 s for both O2 and H2.

  3. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  4. Influence Of pH On The Transport Of Nanoscale Zinc Oxide In Saturated Porous Media

    EPA Science Inventory

    Widespread use of nanoscale zinc oxide (nZnO) in various fields causes subsurface environment contamination. Even though the transport of dissolved zinc ions in subsurface environments such as soils and sediments has been widely studied, the transport mechanism of nZnO in such e...

  5. Influence Of pH On The Transport Of Nanoscale Zinc Oxide In Saturated Porous Media

    EPA Science Inventory

    Widespread use of nanoscale zinc oxide (nZnO) in various fields causes subsurface environment contamination. Even though the transport of dissolved zinc ions in subsurface environments such as soils and sediments has been widely studied, the transport mechanism of nZnO in such e...

  6. Bioavailability of zinc oxide added to corn tortilla is similar to that of zinc sulfate and is not affected by simultaneous addition of iron

    PubMed Central

    Rosado, Jorge L.; Díaz, Margarita; Muñoz, Elsa; Westcott, Jamie L.; González, Karla E.; Krebs, Nancy F.; Caamaño, María C.; Hambidge, Michael

    2013-01-01

    Background Corn tortilla is the staple food of Mexico and its fortification with zinc, iron, and other micronutrients is intended to reduce micronutrient deficiencies. However, no studies have been performed to determine the relative amount of zinc absorbed from the fortified product and whether zinc absorption is affected by the simultaneous addition of iron. Objective To compare zinc absorption from corn tortilla fortified with zinc oxide versus zinc sulfate and to determine the effect of simultaneous addition of two doses of iron on zinc bioavailability. Methods A randomized, double-blind, crossover design was carried out in two phases. In the first phase, 10 adult women received corn tortillas with either 20 mg/kg of zinc oxide added, 20 mg/kg of zinc sulfate added, or no zinc added. In the second phase, 10 adult women received corn tortilla with 20 mg/kg of zinc oxide added and either with no iron added or with iron added at one of two different levels. Zinc absorption was measured by the stable isotope method. Results The mean (± SEM) fractional zinc absorption from unfortified tortilla, tortilla fortified with zinc oxide, and tortilla fortified with zinc sulfate did not differ among treatments: 0.35 ± 0.07, 0.36 ± 0.05, and 0.37 ± 0.07, respectively. The three treatment groups with 0, 30, and 60 mg/kg of added iron had similar fractional zinc absorption (0.32 ± 0.04, 0.33 ± 0.02, and 0.32 ± 0.05, respectively) and similar amounts of zinc absorbed (4.8 ± 0.7, 4.5 ± 0.3, and 4.8 ± 0.7 mg/day, respectively). Conclusions Since zinc oxide is more stable and less expensive and was absorbed equally as well as zinc sulfate, we suggest its use for corn tortilla fortification. Simultaneous addition of zinc and iron to corn tortilla does not modify zinc bioavailability at iron doses of 30 and 60 mg/kg of corn flour. PMID:23424892

  7. Bioavailability of zinc oxide added to corn tortilla is similar to that of zinc sulfate and is not affected by simultaneous addition of iron.

    PubMed

    Rosado, Jorge L; Díaz, Margarita; Muñoz, Elsa; Westcott, Jamie L; González, Karla E; Krebs, Nancy F; Caamaño, María C; Hambidge, Michael

    2012-12-01

    Corn tortilla is the staple food of Mexico and its fortification with zinc, iron, and other micronutrients is intended to reduce micronutrient deficiencies. However, no studies have been performed to determine the relative amount of zinc absorbed from the fortified product and whether zinc absorption is affected by the simultaneous addition of iron. To compare zinc absorption from corn tortilla fortified with zinc oxide versus zinc sulfate and to determine the effect of simultaneous addition of two doses of iron on zinc bioavailability. A randomized, double-blind, crossover design was carried out in two phases. In the first phase, 10 adult women received corn tortillas with either 20 mg/kg of zinc oxide added, 20 mg/kg of zinc sulfate added, or no zinc added. In the second phase, 10 adult women received corn tortilla with 20 mg/kg of zinc oxide added and either with no iron added or with iron added at one of two different levels. Zinc absorption was measured by the stable isotope method. The mean (+/- SEM) fractional zinc absorption from unfortified tortilla, tortilla fortified with zinc oxide, and tortilla fortified with zinc sulfate did not differ among treatments: 0.35 +/- 0.07, 0.36 +/- 0.05, and 0.37 +/- 0.07, respectively. The three treatment groups with 0, 30, and 60 mg/kg of added iron had similar fractional zinc absorption (0.32 +/- 0.04, 0.33 +/- 0.02, and 0.32 +/- 0.05, respectively) and similar amounts of zinc absorbed (4.8 +/- 0.7, 4.5 +/- 0.3, and 4.8 +/- 0.7 mg/day, respectively). Since zinc oxide is more stable and less expensive and was absorbed equally as well as zinc sulfate, we suggest its use for corn tortilla fortification. Simultaneous addition of zinc and iron to corn tortilla does not modify zinc bioavailability at iron doses of 30 and 60 mg/kg of corn flour.

  8. Development of a poly(ether urethane) system for the controlled release of two novel anti-biofilm agents based on gallium or zinc and its efficacy to prevent bacterial biofilm formation.

    PubMed

    Ma, Hongyan; Darmawan, Erica T; Zhang, Min; Zhang, Lei; Bryers, James D

    2013-12-28

    Traditional antibiotic therapy to control medical device-based infections typically fails to clear biofilm infections and may even promote the evolution of antibiotic resistant species. We report here the development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin IX (PP) or mesoprotoporphyrin IX (MP) that are both highly effective in negating suspended bacterial growth and biofilm formation. These chelated gallium or zinc complexes act as iron siderophore analogs, supplanting the natural iron uptake of most bacteria. Poly (ether urethane) (PEU; Biospan®) polymer films were fabricated for the controlled sustained release of the Ga- or Zn-complexes, using an incorporated pore-forming agent, poly(ethylene glycol) (PEG). An optimum formulation containing 8% PEG (MW=1450) in the PEU polymer effectively sustained drug release for at least 3months. All drug-loaded PEU films exhibited in vitro ≥ 90% reduction of Gram-positive (Staphylococcus epidermidis) and Gram-negative (Pseudomonas aeruginosa) bacteria in both suspended and biofilm culture versus the negative control PEU films releasing nothing. Cytotoxicity and endotoxin evaluation demonstrated no adverse responses to the Ga- or Zn-complex releasing PEU films. Finally, in vivo studies further substantiate the anti-biofilm efficacy of the PEU films releasing Ga- or Zn- complexes. © 2013.

  9. Development of a poly (ether urethane) system for the controlled release of two novel anti-biofilm agents based on gallium or zinc and its efficacy to prevent bacterial biofilm formation

    PubMed Central

    Ma, Hongyan; Darmawan, Erica T.; Zhang, Min; Zhange, Lei; Bryers, James D.

    2013-01-01

    Traditional antibiotic therapy to control medical device-based infections typically fails to clear biofilm infections and may even promote the evolution of antibiotic resistant species. We report here the development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin IX (PP) or mesoprotoporphyrin IX (MP) that are both highly effective in negating suspended bacterial growth and biofilm formation. These chelated gallium or zinc complexes act as iron siderophore analogs, surplanting the natural iron uptake of most bacteria. Poly (ether urethane) (PEU; Biospan®) polymer films were fabricated for the controlled sustained release of the Ga- or Zn-complexes, using an incorporated pore-forming agent, poly (ethylene glycol) (PEG). An optimum formulation containing 8% PEG (MW=1450) in the PEU polymer effectively sustained drug release for at least 3 months. All drug-loaded PEU films exhibited in vitro ≥ 90% reduction of Gram-positive (Staphylococcus epidermidis) and Gram-negative (Pseudomonas aeruginosa) bacteria in both suspended and biofilm culture versus the negative control PEU films releasing nothing. Cytotoxicity and endotoxin evaluation demonstrated no adverse responses to the Ga- or Zn-complex releasing PEU films. Finally, in vivo studies further substantiate the anti-biofilm efficacy of the PEU films releasing Ga- or Zn- complexes. PMID:24140747

  10. Pharmacokinetics, tissue distribution, and excretion of zinc oxide nanoparticles

    PubMed Central

    Baek, Miri; Chung, Hae-Eun; Yu, Jin; Lee, Jung-A; Kim, Tae-Hyun; Oh, Jae-Min; Lee, Won-Jae; Paek, Seung-Min; Lee, Jong Kwon; Jeong, Jayoung; Choy, Jin-Ho; Choi, Soo-Jin

    2012-01-01

    Background This study explored the pharmacokinetics, tissue distribution, and excretion profile of zinc oxide (ZnO) nanoparticles with respect to their particle size in rats. Methods Two ZnO nanoparticles of different size (20 nm and 70 nm) were orally administered to male and female rats, respectively. The area under the plasma concentration-time curve, tissue distribution, excretion, and the fate of the nanoparticles in organs were analyzed. Results The plasma zinc concentration of both sizes of ZnO nanoparticles increased during the 24 hours after administration in a dose-dependent manner. They were mainly distributed to organs such as the liver, lung, and kidney within 72 hours without any significant difference being found according to particle size or rat gender. Elimination kinetics showed that a small amount of ZnO nanoparticles was excreted via the urine, while most of nanoparticles were excreted via the feces. Transmission electron microscopy and x-ray absorption spectroscopy studies in the tissues showed no noticeable ZnO nanoparticles, while new Zn-S bonds were observed in tissues. Conclusion ZnO nanoparticles of different size were not easily absorbed into the bloodstream via the gastrointestinal tract after a single oral dose. The liver, lung, and kidney could be possible target organs for accumulation and toxicity of ZnO nanoparticles was independent of particle size or gender. ZnO nanoparticles appear to be absorbed in the organs in an ionic form rather than in a particulate form due to newly formed Zn-S bonds. The nanoparticles were mainly excreted via the feces, and smaller particles were cleared more rapidly than the larger ones. ZnO nanoparticles at a concentration below 300 mg/kg were distributed in tissues and excreted within 24 hours. These findings provide crucial information on possible acute and chronic toxicity of ZnO nanoparticles in potential target organs. PMID:22811602

  11. Phosphate-enhanced cytotoxicity of zinc oxide nanoparticles and agglomerates.

    PubMed

    Everett, W Neil; Chern, Christina; Sun, Dazhi; McMahon, Rebecca E; Zhang, Xi; Chen, Wei-Jung A; Hahn, Mariah S; Sue, H-J

    2014-02-10

    Zinc oxide (ZnO) nanoparticles (NPs) have been found to readily react with phosphate ions to form zinc phosphate (Zn3(PO4)2) crystallites. Because phosphates are ubiquitous in physiological fluids as well as waste water streams, it is important to examine the potential effects that the formation of Zn3(PO4)2 crystallites may have on cell viability. Thus, the cytotoxic response of NIH/3T3 fibroblast cells was assessed following 24h of exposure to ZnO NPs suspended in media with and without the standard phosphate salt supplement. Both particle dosage and size have been shown to impact the cytotoxic effects of ZnO NPs, so doses ranging from 5 to 50 μg/mL were examined and agglomerate size effects were investigated by using the bioinert amphiphilic polymer polyvinylpyrrolidone (PVP) to generate water-soluble ZnO ranging from individually dispersed 4 nm NPs up to micron-sized agglomerates. Cell metabolic activity measures indicated that the presence of phosphate in the suspension media can led to significantly reduced cell viability at all agglomerate sizes and at lower ZnO dosages. In addition, a reduction in cell viability was observed when agglomerate size was decreased, but only in the phosphate-containing media. These metabolic activity results were reflected in separate measures of cell death via the lactate dehydrogenase assay. Our results suggest that, while higher doses of water-soluble ZnO NPs are cytotoxic, the presence of phosphates in the surrounding fluid can lead to significantly elevated levels of cell death at lower ZnO NP doses. Moreover, the extent of this death can potentially be modulated or offset by tuning the agglomerate size. These findings underscore the importance of understanding how nanoscale materials can interact with the components of surrounding fluids so that potential adverse effects of such interactions can be controlled. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

  12. Hybridization of Zinc Oxide Tetrapods for Selective Gas Sensing Applications.

    PubMed

    Lupan, O; Postica, V; Gröttrup, J; Mishra, A K; de Leeuw, N H; Carreira, J F C; Rodrigues, J; Ben Sedrine, N; Correia, M R; Monteiro, T; Cretu, V; Tiginyanu, I; Smazna, D; Mishra, Y K; Adelung, R

    2017-02-01

    In this work, the exceptionally improved sensing capability of highly porous three-dimensional (3-D) hybrid ceramic networks toward reducing gases is demonstrated for the first time. The 3-D hybrid ceramic networks are based on doped metal oxides (MexOy and ZnxMe1-xOy, Me = Fe, Cu, Al) and alloyed zinc oxide tetrapods (ZnO-T) forming numerous junctions and heterojunctions. A change in morphology of the samples and formation of different complex microstructures is achieved by mixing the metallic (Fe, Cu, Al) microparticles with ZnO-T grown by the flame transport synthesis (FTS) in different weight ratios (ZnO-T:Me, e.g., 20:1) followed by subsequent thermal annealing in air. The gas sensing studies reveal the possibility to control and change/tune the selectivity of the materials, depending on the elemental content ratio and the type of added metal oxide in the 3-D ZnO-T hybrid networks. While pristine ZnO-T networks showed a good response to H2 gas, a change/tune in selectivity to ethanol vapor with a decrease in optimal operating temperature was observed in the networks hybridized with Fe-oxide and Cu-oxide. In the case of hybridization with ZnAl2O4, an improvement of H2 gas response (to ∼7.5) was reached at lower doping concentrations (20:1), whereas the increase in concentration of ZnAl2O4 (ZnO-T:Al, 10:1), the selectivity changes to methane CH4 gas (response is about 28). Selectivity tuning to different gases is attributed to the catalytic properties of the metal oxides after hybridization, while the gas sensitivity improvement is mainly associated with additional modulation of the electrical resistance by the built-in potential barriers between n-n and n-p heterojunctions, during adsorption and desorption of gaseous species. Density functional theory based calculations provided the mechanistic insights into the interactions between different hybrid networks and gas molecules to support the experimentally observed results. The studied networked materials and

  13. Anthelmintic effects of zinc oxide and iron oxide nanoparticles against Toxocara vitulorum

    NASA Astrophysics Data System (ADS)

    Dorostkar, Ruhollah; Ghalavand, Majdedin; Nazarizadeh, Ali; Tat, Mahdi; Hashemzadeh, Mohammad Sadegh

    2017-04-01

    In the present study, zinc oxide (ZnO) and iron oxide (FeO) nanoparticles were examined for their possible, in vitro anthelmintic effects against Toxocara vitulorum. The worms were incubated for 24 h with different concentrations (0.004, 0.008 and 0.012% w/v) of the nanoparticles. The parasite mobility, mortality, superoxide dismutase (SOD) activity, malondialdehyde (MDA) and nitric oxide (NO) level were recorded at different time intervals. The results showed that both of the nanoparticles could significantly decrease worm's mobility, increase mortality rate as well as elevate MDA and NO content as compared to control group in a time- and concentration-dependent manner. SOD activity was elevated with the low concentration of the nanoparticles but it was decreased in higher ones. It can be concluded that ZnO and FeO nanoparticles exert their anthelmintic effects via induction of oxidative/nitrosative stress.

  14. Colloidal Synthesis of Bipolar Off-Stoichiometric Gallium Iron Oxide Spinel-Type Nanocrystals with Near-IR Plasmon Resonance.

    PubMed

    Urso, Carmine; Barawi, Mariam; Gaspari, Roberto; Sirigu, Gianluca; Kriegel, Ilka; Zavelani-Rossi, Margherita; Scotognella, Francesco; Manca, Michele; Prato, Mirko; De Trizio, Luca; Manna, Liberato

    2017-01-25

    We report the colloidal synthesis of ∼5.5 nm inverse spinel-type oxide Ga2FeO4 (GFO) nanocrystals (NCs) with control over the gallium and iron content. As recently theoretically predicted, some classes of spinel-type oxide materials can be intrinsically doped by means of structural disorder and/or change in stoichiometry. Here we show that, indeed, while stoichiometric Ga2FeO4 NCs are intrinsic small bandgap semiconductors, off-stoichiometric GFO NCs, produced under either Fe-rich or Ga-rich conditions, behave as degenerately doped semiconductors. As a consequence of the generation of free carriers, both Fe-rich and Ga-rich GFO NCs exhibit a localized surface plasmon resonance in the near-infrared at ∼1000 nm, as confirmed by our pump-probe absorption measurements. Noteworthy, the photoelectrochemical characterization of our GFO NCs reveal that the majority carriers are holes in Fe-rich samples, and electrons in Ga-rich ones, highlighting the bipolar nature of this material. The behavior of such off-stoichiometric NCs was explained by our density functional theory calculations as follows: the substitution of Ga(3+) by Fe(2+) ions, occurring in Fe-rich conditions, can generate free holes (p-type doping), while the replacement of Fe(2+) by Ga(3+) cations, taking place in Ga-rich samples, produces free electrons (n-type doping). These findings underscore the potential relevance of spinel-type oxides as p-type transparent conductive oxides and as plasmonic semiconductors.

  15. Low Extracellular Zinc Increases Neuronal Oxidant Production Through NADPH Oxidase and Nitric Oxide Synthase Activation

    PubMed Central

    Aimo, Lucila; Cherr, Gary N.; Oteiza, Patricia I.

    2012-01-01

    A decrease in zinc (Zn) levels increases the production of cell oxidants, affects the oxidant defense system and triggers oxidant sensitive signals in neuronal cells. However, the underlying mechanisms are still unclear. This work tested the hypothesis that the increase in neuronal oxidants that occurs when cellular Zn decreases is mediated by the activation of the NMDA receptor. Differentiated PC12 cells were cultured in control, Zn-deficient or Zn-repleted media. The incubation in Zn deficient media led to a rapid increase in cellular calcium levels, which was prevented by a NMDA receptor antagonist (MK-801). Cellular calcium accumulation was associated with NADPH oxidase and nitric oxide synthase (NOS) activation, an increase in cell oxidant levels, and an associated activation of a redox-sensitive signal (AP-1). In cells incubated in the Zn deficient medium, NADPH oxidase activation was prevented by MK-801 and by a protein kinase C inhibitor. The rise in cell oxidants was prevented by inhibitors of NADPH oxidase, of the NOS and by MK-801. A similar pattern of inhibitor action was observed for zinc deficiency-induced AP-1 activation. Results demonstrate that a decrease in extracellular Zn leads to an increase in neuronal oxidants through the activation of the NMDAR that leads to calcium influx and to a calcium-mediated activation of protein kinase C/NADPH oxidase and NOS. Changes in extracellular Zn concentrations can be sensed by neurons, which using reactive oxygen and nitrogen species as second messengers, can regulate signaling involved in neuronal development and function. PMID:20211250

  16. Hydrothermal synthesis of zinc oxide nanoparticles using rice as soft biotemplate

    PubMed Central

    2013-01-01

    Background Rice as a renewable, abundant bio-resource with unique characteristics can be used as a bio-template to synthesize various functional nanomaterials. Therefore, the effect of uncooked rice flour as bio-template on physico-chemical properties, especially the morphology of zinc oxide nanostructures was investigated in this study. The ZnO particles were synthesized through hydrothermal-biotemplate method using zinc acetate-sodium hydroxide and uncooked rice flour at various ratios as precursors at 120°C for 18 hours. Results The results indicate that rice as a bio-template can be used to modify the shape and size of zinc oxide particles. Different morphologies, namely flake-, flower-, rose-, star- and rod-like structures were obtained with particle size at micro- and nanometer range. Pore size and texture of the resulting zinc oxide particles were found to be template-dependent and the resulting specific surface area enhanced compared to the zinc oxide synthesized without rice under the same conditions. However, optical property particularly the band gap energy is generally quite similar. Conclusion Pure zinc oxide crystals were successfully synthesized using rice flour as biotemplate at various ratios of zinc salt to rice. The size- and shape-controlled capability of rice to assemble the ZnO particles can be employed for further useful practical applications. PMID:23919386

  17. Hydrothermal synthesis of zinc oxide nanoparticles using rice as soft biotemplate.

    PubMed

    Ramimoghadam, Donya; Bin Hussein, Mohd Zobir; Taufiq-Yap, Yun Hin

    2013-01-01

    Rice as a renewable, abundant bio-resource with unique characteristics can be used as a bio-template to synthesize various functional nanomaterials. Therefore, the effect of uncooked rice flour as bio-template on physico-chemical properties, especially the morphology of zinc oxide nanostructures was investigated in this study. The ZnO particles were synthesized through hydrothermal-biotemplate method using zinc acetate-sodium hydroxide and uncooked rice flour at various ratios as precursors at 120°C for 18 hours. The results indicate that rice as a bio-template can be used to modify the shape and size of zinc oxide particles. Different morphologies, namely flake-, flower-, rose-, star- and rod-like structures were obtained with particle size at micro- and nanometer range. Pore size and texture of the resulting zinc oxide particles were found to be template-dependent and the resulting specific surface area enhanced compared to the zinc oxide synthesized without rice under the same conditions. However, optical property particularly the band gap energy is generally quite similar. Pure zinc oxide crystals were successfully synthesized using rice flour as biotemplate at various ratios of zinc salt to rice. The size- and shape-controlled capability of rice to assemble the ZnO particles can be employed for further useful practical applications.

  18. Effectiveness of zinc oxide surge arresters on substation equipment probabilities of flashover

    SciTech Connect

    Lambert, S.R. )

    1988-10-01

    Application of zinc oxide surge arresters has been increasingly considered as an effective means of limiting overvoltages. This paper addresses the effectiveness of such devices relative to the three phase probability of flashover of insulation systems.

  19. Fabrication of Vertically Aligned Carbon Nanotube or Zinc Oxide Nanorod Arrays for Optical Diffraction Gratings.

    PubMed

    Kim, Jeong; Kim, Sun Il; Cho, Seong-Ho; Hwang, Sungwoo; Lee, Young Hee; Hur, Jaehyun

    2015-11-01

    We report on new fabrication methods for a transparent, hierarchical, and patterned electrode comprised of either carbon nanotubes or zinc oxide nanorods. Vertically aligned carbon nanotubes or zinc oxide nanorod arrays were fabricated by either chemical vapor deposition or hydrothermal growth, in combination with photolithography. A transparent conductive graphene layer or zinc oxide seed layer was employed as the transparent electrode. On the patterned surface defined using photoresist, the vertically grown carbon nanotubes or zinc oxides could produce a concentrated electric field under applied DC voltage. This periodic electric field was used to align liquid crystal molecules in localized areas within the optical cell, effectively modulating the refractive index. Depending on the material and morphology of these patterned electrodes, the diffraction efficiency presented different behavior. From this study, we established the relationship between the hierarchical structure of the different electrodes and their efficiency for modulating the refractive index. We believe that this study will pave a new path for future optoelectronic applications.

  20. Transport of Zinc Oxide Nanoparticles in a Simulated Gastric Environment

    NASA Astrophysics Data System (ADS)

    Mayfield, Ryan T.

    Recent years have seen a growing interest in the use of many types of nano sized materials in the consumer sector. Potential uses include encapsulation of nutrients, providing antimicrobial activity, altering texture, or changing bioavailability of nutrients. Engineered nanoparticles (ENP) possess properties that are different than larger particles made of the same constituents. Properties such as solubility, aggregation state, and toxicity can all be changed as a function of size. The gastric environment is an important area for study of engineered nanoparticles because of the varied physical, chemical, and enzymatic processes that are prevalent there. These all have the potential to alter those properties of ENP that make them different from their bulk counterparts. The Human Gastric Simulator (HGS) is an advanced in vitro model that can be used to study many facets of digestion. The HGS consists of a plastic lining that acts as the stomach cavity with two sets of U-shaped arms on belts that provide the physical forces needed to replicate peristalsis. Altering the position of the arms or changing the speed of the motor which powers them allows one to tightly hone and replicate varied digestive conditions. Gastric juice, consisting of salts, enzymes, and acid levels which replicate physiological conditions, is introduced to the cavity at a controllable rate. The release of digested food from the lumen of simulated stomach is controlled by a peristaltic pump. The goal of the HGS is to accurately and repeatedly simulate human digestion. This study focused on introducing foods spiked with zinc oxide ENP and bulk zinc oxide into the HGS and then monitoring how the concentration of each changed at two locations in the HGS over a two hour period. The two locations chosen were the highest point in the lumen of the stomach, which represented the fundus, and a point just beyond the equivalent of the pylorus, which represented the antrum of the stomach. These points were

  1. Ordered Nucleation Sites for the Growth of Zinc Oxide Nanofibers

    SciTech Connect

    Wang, J.; Ginley, D.S.; Shaheen, S.

    2006-01-01

    Organic photovoltaics (OPVs) offer a promising route to low cost photovoltaic (PV) technology that can be inexpensively manufactured on a large scale for use in power generation and commercial products. Solar power conversion efficiencies of laboratory scale OPV devices have recently reached ~5%; however, projected efficiencies of at least 10% will be required for commercialization. An analogous approach that has arisen recently that can potentially increase efficiencies employs metal oxide semiconductors as the electron acceptor, creating a hybrid organic-inorganic device. This approach offers the advantage that the conduction band of the oxide can be tuned in a systematic way through doping, thus potentially achieving higher photovoltages in the device. Additionally, nanostructures of these materials can be easily grown from precursor solutions, providing a technique to precisely control the nanoscale geometry. This work focuses on using ZnO, which is known to have high electron mobility (>100 cm2/Vs), as the electron acceptor. Nanofibers of ZnO can be grown from precursors such as zinc acetate or zinc nitrate to form arrays of nanofibers into which a conjugated polymer can be intercalated to form a composite PV device. The morphology of the nanofiber array is critical to the performance of the device, but current methods of nanofiber growth from a flat, polycrystalline nucleation layer allow for little morphological control. To overcome this limitation, we have created ordered arrays of ZnO nucleation sites with controllable size and spacing. Toluene solutions of diblock copolymer micelles with ZnCl2 incorporated into the micellar cores were spin-coated onto glass substrates and etched with an O2 plasma to yield hexagonally ordered arrays of ZnO nanoparticles that functioned as nucleation sites. Changing the concentration of ZnCl2 and the molecular weight and ratio of the diblock copolymer resulted in systematic variation in the size and spacing of the

  2. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.

    PubMed

    Ahn, Byung Du; Jeon, Hye Ji; Park, Jin-Seong

    2014-06-25

    This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH3COO)2·2H2O and/or SnCl2·2H2O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm(-1) for GaZTO:N films indicated the presence of ZnGa2O4, N-H, and N═O groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm(2) V(-1) s(-1) in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (Vth) of 0.04 V. In addition, the instability of Vth values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band.

  3. Rapid Deposition of Titanium Oxide and Zinc Oxide Films by Solution Precursor Plasma Spray

    NASA Astrophysics Data System (ADS)

    Ando, Yasutaka

    In order to develop a high rate atmospheric film deposition process for functional films, as a basic study, deposition of titanium oxide film and zinc oxide film by solution precursor plasma spray (SPPS) was conducted in open air. Consequently, in the case of titanium oxide film deposition, anantase film and amorphous film as well as rutile film could be deposited by varying the deposition distance. In the case of anatase dominant film, photo-catalytic properties of the films could be confirmed by wettability test. In addition, the dye sensitized sollar cell (DSC) using the TiO2 film deposited by this SPPS technique as photo voltaic device generates 49mV in OCV. On the other hand, in the case of zinc oxide film deposition, it was proved that well crystallized ZnO films with photo catalytic properties could be deposited. From these results, this process was found to have high potential for high rate functional film deposition process conducted in the air.

  4. Synthesis and characterization of nanostructured zinc oxide layers for sensor applications

    SciTech Connect

    Krasteva, L. K.; Dimitrov, D. Tz.; Papazova, K. I.; Nikolaev, N. K.; Peshkova, T. V.; Moshnikov, V. A.; Gracheva, I. E. Karpova, S. S.; Kaneva, N. V.

    2013-04-15

    Fractal structures and arrays of nanowires based on zinc oxide are fabricated by two different methods, sol-gel dip-coating and chemical bath deposition combined with sol-gel synthesis. The gas-sensitive properties of the structures are analyzed. It is found that the greatest sensitivity to reducing ethanol vapor is exhibited by the structure with a lower layer in the form of an array of zinc-oxide nanowires modified by four immersions in a copper nitrate solution.

  5. A study of mercuric oxide and zinc-air battery life in hearing aids.

    PubMed

    Sparkes, C; Lacey, N K

    1997-09-01

    The requirement to phase out mercuric oxide (mercury) batteries on environmental grounds has led to the widespread introduction of zinc-air technology. The possibility arises that high drain hearing aids may not be adequately catered for by zinc-air cells, leading to poor performance. This study investigated the hearing aid user's ability to perceive differences between zinc-air and mercury cells in normal everyday usage. The data was collected for 100 experienced hearing aid users in field trials. Users report 50 per cent greater life for zinc-air cells in high power aids and 28 per cent in low power aids. The average life of the zinc-air cells range from 15 days in high power to 34 days in low power aids. Users are able to perceive a difference in sound quality in favour of zinc-air cells for low and medium power aids. The hearing aid population is not disadvantaged by phasing out mercury cells.

  6. Co-Precipitation Synthesis of Gadolinium Aluminum Gallium Oxide (GAGG) via Different Precipitants

    NASA Astrophysics Data System (ADS)

    Sun, Yan; Yang, Shenghui; Zhang, Ye; Jiang, Jun; Jiang, Haochuan

    2014-02-01

    In order to obtain a uniform transparent ceramic scintillator, well-dispersed fine starting powders with high-purity, small grain size, spherical morphology and high sinter-ability are necessary. In this study, Ce3+ doped gadolinium aluminum gallium garnet Gd3Al3Ga2O12 (GAGG) powders were synthesized by the co-precipitation method. NH4OH, NH4HCO3 and the mixed solution of NH4OH and NH4HCO3 were used as precipitants, respectively. The precursor composition, phase formation process, microstructure, morphology, particle size distribution and luminescent properties of obtained GAGG powders were measured. The results show that powders prepared using the mixed precipitant exhibit the best microstructural morphology, good sinter-ability and highest luminescent intensity. Pure GAGG polycrystalline powders could be obtained at about 950°C for 1.5 h and the average size of the particles is about 50 nm. The photoluminescence spectrum shows a strong green-yellow emission near 540 nm.

  7. Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

    NASA Astrophysics Data System (ADS)

    Wolgamott, Jon Carl

    Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

  8. Processing to obtain high-purity gallium

    NASA Astrophysics Data System (ADS)

    Bautista, Renato G.

    2003-03-01

    Gallium has become increasingly popular as a substrate material for electronic devices. Aside from ore, gallium can be obtained from such industrial sources as the Bayer process caustic liquor that is a byproduct of bauxite processing, flue dust removed from the fume-collection system in plants that produce aluminum by the electrolytic process, zinc refinery residues, gallium scrap materials, and coal fly ash. The purification process for gallium can start with solvent-extraction processes where the concentrations of impurities, especially metals, are reduced to the ppm range. This article describes how ultra-purification techniques can be employed to reduce the undesirable impurities to the low ppb range. The various procedures described give an idea as to the extent of work needed to obtain and prepare high-purity gallium for electronic application.

  9. The role of intracellular zinc release in aging, oxidative stress, and Alzheimer’s disease

    PubMed Central

    McCord, Meghan C.; Aizenman, Elias

    2014-01-01

    Brain aging is marked by structural, chemical, and genetic changes leading to cognitive decline and impaired neural functioning. Further, aging itself is also a risk factor for a number of neurodegenerative disorders, most notably Alzheimer’s disease (AD). Many of the pathological changes associated with aging and aging-related disorders have been attributed in part to increased and unregulated production of reactive oxygen species (ROS) in the brain. ROS are produced as a physiological byproduct of various cellular processes, and are normally detoxified by enzymes and antioxidants to help maintain neuronal homeostasis. However, cellular injury can cause excessive ROS production, triggering a state of oxidative stress that can lead to neuronal cell death. ROS and intracellular zinc are intimately related, as ROS production can lead to oxidation of proteins that normally bind the metal, thereby causing the liberation of zinc in cytoplasmic compartments. Similarly, not only can zinc impair mitochondrial function, leading to excess ROS production, but it can also activate a variety of extra-mitochondrial ROS-generating signaling cascades. As such, numerous accounts of oxidative neuronal injury by ROS-producing sources appear to also require zinc. We suggest that zinc deregulation is a common, perhaps ubiquitous component of injurious oxidative processes in neurons. This review summarizes current findings on zinc dyshomeostasis-driven signaling cascades in oxidative stress and age-related neurodegeneration, with a focus on AD, in order to highlight the critical role of the intracellular liberation of the metal during oxidative neuronal injury. PMID:24860495

  10. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    NASA Astrophysics Data System (ADS)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

  11. Zinc inhibits oxidative stress-induced iron signaling and apoptosis in Caco-2 cells.

    PubMed

    Kilari, Sreenivasulu; Pullakhandam, Raghu; Nair, K Madhavan

    2010-04-01

    Studies in humans and animals have suggested negative interactions of iron and zinc during their intestinal absorption. Further, zinc seems to prevent iron-induced oxidative damage in rats, which was hypothesized to be through the modulation of the intracellular iron signaling pathway. The aim of this study was, therefore, to understand the effects of zinc on oxidant-induced iron signaling and cell death in human enterocyte-like Caco-2 cells. We demonstrate that zinc decreases glucose/glucose oxidase (H(2)O(2)-generating system)-induced iron uptake and inhibits iron-regulatory protein 1 activation and divalent metal ion transporter 1 expression. There was also a concomitant decrease in oxidant-induced intracellular labile iron and restoration of ferritin and metallothionein expression. Further, zinc enhanced the Bcl-2/Bax ratio and reduced caspase-3 activity, leading to inhibition of apoptosis. Interestingly, bathophenanthroline disulfonic acid, an extracellular iron chelator, emulated the effects of zinc except for the reduced ferritin levels. These results suggest that zinc inhibits apoptosis by reducing oxidant-induced iron signaling in Caco-2 cells.

  12. Alterations of Bio-elements, Oxidative, and Inflammatory Status in the Zinc Deficiency Model in Rats.

    PubMed

    Doboszewska, Urszula; Szewczyk, Bernadeta; Sowa-Kućma, Magdalena; Noworyta-Sokołowska, Karolina; Misztak, Paulina; Gołębiowska, Joanna; Młyniec, Katarzyna; Ostachowicz, Beata; Krośniak, Mirosław; Wojtanowska-Krośniak, Agnieszka; Gołembiowska, Krystyna; Lankosz, Marek; Piekoszewski, Wojciech; Nowak, Gabriel

    2016-01-01

    Our previous study showed that dietary zinc restriction induces depression-like behavior with concomitant up-regulation of the N-methyl-D-aspartate receptor (NMDAR). Because metal ions, oxidative stress, and inflammation are involved in depression/NMDAR function, in the present study, bio-elements (zinc, copper, iron, magnesium, and calcium), oxidative (thiobarbituric acid-reactive substances; protein carbonyl content), and inflammatory (IL-1α, IL-1β) factors were measured in serum, hippocampus (Hp), and prefrontal cortex (PFC) of male Sprague-Dawley rats subjected to a zinc-adequate (ZnA) (50 mg Zn/kg) or a zinc-deficient (ZnD) (3 mg Zn/kg) diet for 4 or 6 weeks. Both periods of dietary zinc restriction reduced serum zinc and increased serum iron levels. At 4 weeks, lowered zinc level in the PFC and Hp as well as lowered iron level in the PFC of the ZnD rats was observed. At 6 weeks, however, iron level was increased in the PFC of these rats. Although at 6 weeks zinc level in the PFC did not differ between the ZnA and ZnD rats, extracellular zinc concentration after 100 mM KCl stimulation was reduced in the PFC of the ZnD rats and was accompanied by increased extracellular iron and glutamate levels (as measured by the in vivo microdialysis). The examined oxidative and inflammatory parameters were generally enhanced in the tissue of the ZnD animals. The obtained data suggest dynamic redistribution of bio-elements and enhancement of oxidative/inflammatory parameters after dietary zinc restriction, which may have a link with depression-like behavior/NMDAR function/neurodegeneration.

  13. Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals

    NASA Astrophysics Data System (ADS)

    Nobis, Thomas; Kaidashev, Evgeni M.; Rahm, Andreas; Lorenz, Michael; Grundmann, Marius

    The resonator properties of zinc oxide (ZnO) micro- and nanocrystals grown by a novel high pressure pulsed laser deposition process have been investigated at room temperature by cathodoluminescence (CL), spatially resolved CL-imaging and polarization resolved micro-photoluminescence (μ-PL) within the visible spectral range. The spectra exhibit a series of comparatively sharp and almost equidistant resonance lines. Using a simple plane wave interference model and taking into account the spectral characteristic n(ω) of the refractive index of ZnO, we can unambiguously attribute those lines to whispering gallery modes (WGMs) of a two dimensional hexagonal resonator. The predicted resonator diameters agree well with the measured crystal sizes. Tapered, high aspect ratio ZnO nanoneedles furthermore allow systematic investigations of the WGMs as a function of cavity diameter D down to zero. Hence, the transition from a multi-mode to a single mode cavity is directly observed. μ-PL experiments demonstrate that the WGMs are mainly TM polarized.

  14. Fungus mediated biosynthesis and characterization of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Venkatesh, K. S.; Palani, N. S.; Krishnamoorthi, S. R.; Thirumal, V.; Ilangovan, R.

    2013-06-01

    Recently nanomaterials have been synthesized through biological approach due to its biocompatibility, inexpensive, eco friendly and it offers easiest experimental protocol and so on. ZnO can be potentially used in various applications. This present study reports the fungus mediated extra-cellular bio synthesis of ZnO nanorods using Fusarium Solani. The dried powder was calcined at 350°C for 1 hour in air. The thermal property of the as synthesized ZnO nanopowder was analyzed through Thermo gravimetric /Differential Thermo gravimetric (TGA / DTG) analysis. The structural and morphological properties of the calcined ZnO nanopowder were studied by XRD and SEM analysis respectively. X ray diffraction result revealed that a peak located at 2θ = 36.2° with (101) plane confirms the presence of Zinc oxide with Hexagonal crystal system. The morphology of the calcined ZnO powder was analyzed by Scanning Electron Microscopy and it clearly indicates the presence of ZnO nanorods. The diameter of the nanorods is in the range of 60 to 95 nm.

  15. Synthesis, characterization and catalytic application of polyhedron zinc oxide microparticles

    NASA Astrophysics Data System (ADS)

    Jamil, Saba; Ramzan Saeed Ashraf Janjua, Muhammad; Khan, Shanza Rauf; Jahan, Nazish

    2017-01-01

    Zinc oxide (ZnO) microparticles of unique morphology were synthesized by the microwave heating method. The composition and morphology of the synthesized microparticles were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). It is clear from the XRD pattern that the product is highly pure and crystalline. It is shown from the SEM images that the hexagonal unit cells are arranged in the form of a polyhedral lattice. The length of the sides is equal at the middle of the lattice, and unequal on the terminal sides of the lattice. This is due to the alignment of the hexagonal unit cells. The size distribution histogram of the product possesses a sharp band which shows that it is monodisperse. This means that a monodisperse product can be obtained by the microwave heating method. The synthesized particles were used as a catalyst for the thermal degradation of ammonium perchlorate (AP) and the catalytic reduction of 2-nitrophenol (2-NP) and 4-nitrophenol (4-NP). The effect of temperature on the value of the apparent rate constant was also studied, and the values of the kinetic and thermodynamic parameters were calculated. This shows that the catalyst possesses high efficiency for thermally degrading of substances at low temperatures and rapidly reducing the nitroarenes in an aqueous medium.

  16. The calculation of band gap energy in zinc oxide films

    NASA Astrophysics Data System (ADS)

    Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said

    2015-01-01

    We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.

  17. Antibacterial effect of zinc oxide nanoparticles combined with ultrasound

    NASA Astrophysics Data System (ADS)

    Seil, Justin T.; Webster, Thomas J.

    2012-12-01

    Using Staphylococcus aureus (S. aureus), the present study investigated the antibacterial effect of ZnO nanoparticles both in the absence and presence of ultrasound stimulation. While the antibacterial effect of control nanoparticle chemistries (Al2O3) alone was either weak or unobservable under the conditions tested, the antibacterial effect of ZnO alone was significant, providing over a four log reduction (equivalent to antibiotics) compared to no treatment after just 8 h. The antibacterial effect was enhanced as ZnO particle diameter decreased. Specifically, when testing the antibacterial effect against bacteria populations relevant to infection, a 500 μg ml-1 dose of zinc oxide nanoparticles with a diameter of 20 nm reduced S. aureus populations by four orders of magnitude after 8 and 24 h, compared to control groups with no nanoparticles. This was accomplished without the use of antibiotics, to which bacteria are developing a resistance anyway. The addition of ultrasound stimulation further reduced the number of viable colony-forming units present in a planktonic cell suspension by 76% compared to nanoparticles alone. Lastly, this study provided a mechanism for how ZnO nanoparticles in the presence of ultrasound decrease bacteria functions by demonstrating greater hydrogen peroxide generation by S. aureus compared to controls. These results indicated that small-diameter ZnO nanoparticles exhibited strong antibacterial properties that can be additionally enhanced in the presence of ultrasound and, thus, should be further studied for a wide range of medical device anti-infection applications.

  18. Zinc Oxide Coated Carbon Nanotubes for Energy Harvesting Applications

    NASA Astrophysics Data System (ADS)

    Mohney, Austin; Stollberg, David

    2012-02-01

    Small scale electrical devices depend on bulky batteries that require recharging or replacement. In biomedical monitoring, where sensors could be implanted inside the body, maintenance of batteries presents a problem. It would be beneficial if small scale devices could generate their own power and alleviate their dependence on batteries. Piezoelectric nanogenerators have proven themselves as a viable means for ambient energy harvesting. Piezoelectric materials, such as zinc oxide (ZnO), produce a voltage difference when subjected to mechanical strain. Manipulation of this voltage can allow for the storage of energy to power small scale devices. The objective of this research is to manufacture a piezo-generator that can transduce mechanical vibrations into electrical energy. Carbon nanotubes, selected for their strong, flexible, and conductive properties, are used as a structural backbone for a ZnO piezoelectric coating and a Ag electrode coating. A Schottky diode interface is used to rectify the current output of the device. The devices yielded an average current output of .79 microAmps. SEM imagining was used to characterize the fabrication process. A Keithley 2700 digital multimeter was used to characterize the current output of the devices.

  19. Antibacterial effect of zinc oxide nanoparticles combined with ultrasound.

    PubMed

    Seil, Justin T; Webster, Thomas J

    2012-12-14

    Using Staphylococcus aureus (S. aureus), the present study investigated the antibacterial effect of ZnO nanoparticles both in the absence and presence of ultrasound stimulation. While the antibacterial effect of control nanoparticle chemistries (Al(2)O(3)) alone was either weak or unobservable under the conditions tested, the antibacterial effect of ZnO alone was significant, providing over a four log reduction (equivalent to antibiotics) compared to no treatment after just 8 h. The antibacterial effect was enhanced as ZnO particle diameter decreased. Specifically, when testing the antibacterial effect against bacteria populations relevant to infection, a 500 μg ml(-1) dose of zinc oxide nanoparticles with a diameter of 20 nm reduced S. aureus populations by four orders of magnitude after 8 and 24 h, compared to control groups with no nanoparticles. This was accomplished without the use of antibiotics, to which bacteria are developing a resistance anyway. The addition of ultrasound stimulation further reduced the number of viable colony-forming units present in a planktonic cell suspension by 76% compared to nanoparticles alone. Lastly, this study provided a mechanism for how ZnO nanoparticles in the presence of ultrasound decrease bacteria functions by demonstrating greater hydrogen peroxide generation by S. aureus compared to controls. These results indicated that small-diameter ZnO nanoparticles exhibited strong antibacterial properties that can be additionally enhanced in the presence of ultrasound and, thus, should be further studied for a wide range of medical device anti-infection applications.

  20. Study of phosphate removal from aqueous solution by zinc oxide.

    PubMed

    Luo, Zhen; Zhu, Suiyi; Liu, Zhongmou; Liu, Jiancong; Huo, Mingxin; Yang, Wu

    2015-09-01

    Zinc oxide (ZnO) was synthesized and used to investigate the mechanism of phosphate removal from aqueous solution. ZnO particles were characterized by X-ray diffraction, scanning electron microscope and Fourier transform infrared spectroscopy before and after adsorption. Batch experiments were carried out to investigate the kinetics, isotherms, effects of initial pH and co-existing anions. The adsorption process was rapid and equilibrium was almost reached within 150 min. The adsorption kinetics were described well by a pseudo-second-order equation, and the maximum phosphate adsorption capacity was 163.4 mg/g at 298 K and pH ∼6.2±0.1. Thermodynamic analysis indicated the phosphate adsorption onto ZnO was endothermic and spontaneous. The point of zero charge of ZnO was around 8.4 according to the pH-drift method. Phosphate adsorption capacity reduced with the increasing initial solution pH values. The ligand exchange and Lewis acid-base interaction dominated the adsorption process in the lower and the higher pH range, respectively. Nitrate, sulfate and chloride ions had a negligible effect on phosphate removal, while carbonate displayed significant inhibition behavior.

  1. Synthesis of europium-doped zinc oxide micro- and nanowires

    NASA Astrophysics Data System (ADS)

    Al Rifai, S. A.; Ryabtsev, S. V.; Smirnov, M. S.; Domashevskaya, E. P.; Ivanov, O. N.

    2014-01-01

    Single crystalline Eu3+-doped wurtzite ZnO micro- and nanowires were synthesized by a chemical vapor deposition method (CVD). The nanostructures were grown by autocatalytic mechanism at walls of an alumina boat. The structure and properties of the doped ZnO is fully characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectrometry (EDX), scanning and transmission electron microscopy (SEM and TEM), and photoluminescence (PL) methods. The synthesis was carried out for 10 min giving vertically aligned nanowires with mean diameter of 50-400 nm and with length of up to several microns. The nanowires were grown along ±[0001] direction. The concentration of Eu3+ dopant in the synthesized nanowires was varied from 0.7 to 0.9 at %. The crystal structure and microstructures of the doped nanomaterials were discussed and compared with undoped ZnO. The photoluminescence spectra show that emission of doped samples were shifted towards orange-red region (2.02 eV) relative to undoped zinc oxide nanostructures (2.37 eV) due to Eu3+ intraionic transitions from ZnO/Eu.

  2. Querectin Alleviates Zinc Oxide Nanoreprotoxicity in Male Albino Rats.

    PubMed

    Hussein, Mohamed M A; Ali, Haytham A; Saadeldin, Islam M; Ahmed, Mona M

    2016-10-01

    Zinc oxide nanopartciles (ZnONPs) involved in advanced technologies, and their wide-scale use in consumer market makes human beings more prone to the exposure to ZnONPs. The present study was undertaken to evaluate amelioration of ZnONP-induced toxicities with querectin in male albino rats. ZnONPs-treated rats showed a significant decrease in sperm cell count, sperm motility, live and normal sperms, as well as serum testosterone level. Severe histopathological damage with a significant increase in lipid peroxidation and a decrease in antioxidant enzymes activity and the GSH level were observed in the affected testis. Relative quantitative polymerase chain reaction results showed a significant decrease in antioxidant enzymes (superoxide dismutase and catalase) and a significant decrease in 3β-HSD, 17β-HSD, and Nr5A1 transcripts. Rats-administered querectin along with ZnONPs showed less toxic effects on all studied reproductive traits and mRNA transcripts. Our results suggest that querectin is beneficial for preventing or ameliorating ZnONP reproductive toxicities in males.

  3. Biomimetic alignment of zinc oxide nanoparticles along a peptide nanofiber.

    PubMed

    Tomizaki, Kin-ya; Kubo, Seiya; Ahn, Soo-Ang; Satake, Masahiko; Imai, Takahito

    2012-09-18

    Zinc oxide (ZnO) has potential applications in solar cells, chemical sensors, and piezoelectronic and optoelectronic devices due to its attractive physical and chemical properties. Recently, a solution-phase method has been used to synthesize ZnO crystals with diverse (from simple to hierarchical) nanostructures that is simple, of low cost, and scalable. This method requires template molecules to control the morphology of the ZnO crystals. In this paper, we describe the design and synthesis of two short peptides (RU-003,Ac-AIEKAXEIA-NH(2); RU-027, EAHVMHKVAPRPGGGAIEKAXEIA-NH(2); X = l-2-naphthylalanine) and the characterization of their self-assembled nanostructures. We also report their potential for ZnO mineralization and the alignment of ZnO nanoparticles along peptide nanostructures at room temperature. Interestingly, nonapeptide RU-003 predominantly formed a straight fibrous structure and induced the nucleation of ZnO at its surface, leading to an alignment of ZnO nanoparticles along a peptide nanofiber. This novel method holds promise for the room-temperature fabrication of ZnO catalysts with increased specific surface area, ZnO-gated transistors, and ZnO-based nanomaterials for optical applications.

  4. Immobilization of diastase α-amylase on nano zinc oxide.

    PubMed

    Antony, Navya; Balachandran, S; Mohanan, P V

    2016-11-15

    Diastase α-amylase extracted from malt, catalyses break down of starch into maltose. It is commonly used in food and fermentation industry. In the present study nano zinc oxide is used as support for this starch hydrolyzing enzyme. IR study revealed that the enzyme got adsorbed via electrostatic interaction with the functional groups on the support. The immobilized enzyme possessed a better heat-resistance than free enzyme. The kinetic parameters were determined using Lineweaver-Burk plot. The immobilized enzyme showed higher Km 2.08mg/ml than the free enzyme whose Km is 0.45±.05mg/ml. The Vmax of immobilized enzyme was about 2.92±.02mg/ml/min and that of free enzyme was 7.14±.02mg/ml/min, showing decrease in activity after immobilization. The immobilized enzyme showed 70% activity after 30days of storage while free enzyme lost its activity within 7days. About 80% of enzyme retained activity after 4 cycles of reuse.

  5. Adsorption of poly(vinyl formamide-co-vinyl amine) (PVFA-co-PVAm) polymers on zinc, zinc oxide, iron, and iron oxide surfaces.

    PubMed

    Seifert, Susan; Simon, Frank; Baumann, Giesela; Hietschold, Michael; Seifert, Andreas; Spange, Stefan

    2011-12-06

    The adsorption of poly(vinyl formamide) (PVFA) and the statistic copolymers poly(vinyl formamide-co-vinyl amine) (PVFA-co-PVAm) onto zinc and iron metal particles as well as their oxides was investigated. The adsorbates were characterized by means of XPS, DRIFT spectroscopy, wet chemical analysis, and solvatochromic probes. Dicyano-bis-(1,10-phenanthroline)-iron(II) (1), 3-(4-amino-3-methylphenyl)-7-phenyl-benzo-[1,2-b:4,5-b']difuran-2,6-dione (2), and 4-tert-butyl-2-(dicyano-methylene)-5-[4-(diethylamino)-benzylidene]-Δ(3)-thiazoline (3) as solvatochromic probes were coadsorbed onto zinc oxide to measure various effects of surface polarity. The experimental findings showed that the adsorption mechanism of PVFA and PVFA-co-PVAm strongly depends on the degree of hydrolysis of PVFA and pH values and also on the kind of metal or metal oxide surfaces that were employed as adsorbents. The adsorption mechanism of PVFA/PVFA-co-PVAm onto zinc oxide and iron oxide surfaces is mainly affected by electrostatic interactions. Particularly in the region of pH 5, the adsorption of PVFA/PVFA-co-PVAm onto zinc and iron metal particles is additionally influenced by redox processes, dissolution, and complexation reactions. © 2011 American Chemical Society

  6. Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

    NASA Astrophysics Data System (ADS)

    Mayo, Daniel C.; Nolen, J. Ryan; Cook, Andrew; Mu, Richard R.; Haglund, Richard F.

    2016-03-01

    Conventional scintillation detectors are typically single crystals of heavy-metal oxides or halides doped with rare-earth ions that record the recombination of electron-hole pairs by photon emission in the visible to ultraviolet. However, the light yields are typically low enough to require photomultiplier detection with the attendant instrumental complications. Here we report initial studies of gamma ray detection by zinc oxide (ZnO) nanowires, grown by vapor-solid deposition. The nanowires grow along the c-axis in a wurtzite structure; they are typically 80 nm in diameter and have lengths of 1- 2 μm. The nanowires are single crystals of high quality, with a photoluminescence (PL) yield from band-edge exciton emission in the ultraviolet that is typically one hundred times larger than the PL yield from defect centers in the visible. Nanowire ensembles were irradiated by 662 keV gamma rays from a Cs-137 source for periods of up to ten hours; gamma rays in this energy range interact by Compton scattering, which in ZnO creates F+ centers that relax to form singly-charged positive oxygen vacancies. Following irradiation, we fit the PL spectra of the visible emission with a sum of Gaussians at the energies of the known defects. We find highly efficient PL from the irradiated area, with a figure of merit approaching 106 photons/s/MeV of deposited energy. Over a period of days, the singly charged O+ vacancies relax to the more stable doubly charged O++ vacancies. However, the overall defect PL returns to pre-irradiation values after about a week, as the vacancies diffuse to the surface of these very thin nanowires, indicating that a self-healing process restores the nanowires to their original state.

  7. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  8. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-01-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/p-Si junctions were investigated. The current-voltage (I-V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/n-CdO/p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S -V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  9. Spectroscopic Ellipsometry Measurements of Wurtzite Gallium Nitride Surfaces as a Function of Buffered Oxide Etch Substrate Submersion

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester; Constantin, Costel; Duda, John; Hopkins, Patrick; Optical Studies of GaN interfaces Collaboration

    2013-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of silicon. Understanding the optical properties of GaN surfaces is imperative in determining the utility and applicability of this class of materials to devices. In this work, we present preliminary results of spectroscopic ellipsometry measurements as a function of surface root mean square (RMS). We used commercially available 5mm x 5mm, one side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a wurtzite crystal structure and they are slightly n-type doped. The GaN substrates were cleaned with Acetone (20 min)/Isopropanol(20 min)/DI water (20 min) before they were submerged into Buffered Oxide Etch (BOE) for 10s - 60s steps. This BOE treatment produced RMS values of 1-30 nm as measured with an atomic force microscope. Preliminary qualitative ellipsometric measurements show that the complex refractive index and the complex dielectric function decrease with an increase of RMS. More measurements need to be done in order to provide explicit quantitative results. This work was supported by the 4-VA Collaborative effort between James Madison University and University of Virginia.

  10. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/ p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-04-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/ p-Si junctions were investigated. The current-voltage ( I- V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/ n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/ n-CdO/ p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C- V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S - V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  11. Kinetics of and atmospheric effects on gallium removal from a CeO{sub 2} based mixed oxide surrogate

    SciTech Connect

    Park, Y.S.; Taylor, T.N.; Atencio, A.; Butt, D.P.

    1998-12-31

    This paper describes preliminary experimental results on the kinetics of Ga removal from Ga{sub 2}O{sub 3}-doped CeO{sub 2{minus}x}, a surrogate for weapons grade PuO{sub 2{minus}x}. Ga is removed from the surrogate feedstock material using thermal techniques. An Ar-6% H{sub 2} gas was used in order to reduce the oxide to gaseous Ga{sub 2}O. Experiments were done in the temperature range of 600--1,200 C as a function of time, gas flow rate, and sample geometry. Samples were analyzed through measurements of weight change, scanning electron microscopy/energy dispersive spectroscopy, x-ray photoelectron spectroscopy, proton induced x-ray emission, and direct current plasma analysis. Gallium levels were reduced by as much as 98% (130 ppm Ga residue) of that in the starting material. Studies to date have shown CeO{sub 2{minus}x} is a very good surrogate for PuO{sub 2{minus}x}.

  12. Gallium complexes and solvent extraction of gallium

    SciTech Connect

    Coleman, J.P.; Graham, C.R.; Monzyk, B.F.

    1988-05-03

    This patent describes a process for recovering gallium from aqueous solutions containing gallium which comprises contacting such a solution with an organic solvent containing at least 2% by weight of a water-insoluble N-organo hydroxamic acid having at least about 8 carbon atoms to extract gallium, and separating the gallium loaded organic solvent phase from the aqueous phase.

  13. A planar violet electroabsorption modulator and modeling of electric effects on zinc oxide excitons

    NASA Astrophysics Data System (ADS)

    Zhang, Xiyao

    First principle electroabsorption calculations based on WTK spectral density theorem and Dow and Redfield theory were performed and used as the basis of a model to fit experimental electroabsorption data. The calculation results were compared to absorption measurements taken from 4.5 K to 300 K on a c-plane ZnO thin film sample to obtain the temperature broadening linewidth. The extracted broadening parameters were then expressed with two material related coefficients: the exciton-acoustic-phonon interaction strength gammaph = 79.6 +/- 3 microeV/K and exciton-LO-phonon interaction strength Gamma LO G = 242 +/- 10 meV. This expression is independent of sample qualities, or is "generalized" to accommodate the exciton band edge. A concept called "effective microfield intensity" was introduced to represent the crystalline quality. The microfield intensities of two ZnO samples with rocking curve FWHMs ˜ 0.25° and ˜ 0.42° are ˜ 1.3x105 and ˜ 2.26x105 kV/cm respectively. Buffer-assisted growth technique was applied to improve the quality of PLD grown ZnO on sapphire. ZnO thin films were deposited on ATO/ITO/glass substrate at 500 to 700 K, with higher temperature producing better films. XRD of these samples show highly c-oriented ZnO growth on the ATO substrate. ZnO electroabsorption modulators were fabricated based on ZnO/ATO/ITO/glass structure. Two types of top electrodes, Ni semi-transparent electrode (TE) and conducting indium gallium zinc oxide (IGZO) were experimented with the IGZO-coated device reducing the insertion loss by ˜50%. The DC percentage modulation of these devices have two peaks, over 40% near ˜ 370 nm and around 20% near ˜ 385 nm at 140 V bias. AC testing confirms purely field modulation and shows no evident of frequency cut-off up to 100 kHz. A simple device model attributes the threshold voltage of ZnO electroabsorption modulators to the charge screening effects. Applied voltage was obtained both by converting the electric field based on

  14. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  15. The influence of zinc chloride and zinc oxide nanoparticles on air-time survival in freshwater mussels.

    PubMed

    Gagné, François; Auclair, Joëlle; Peyrot, Caroline; Wilkinson, Kevin J

    2015-01-01

    The purpose of this study was to determine the cumulative effects of exposure to either dissolved zinc or nanozinc oxide (nanoZnO) and air-time survival in freshwater mussels. Mussels were exposed to each forms of zinc for 96h then placed in air to determine survival time. A sub-group of mussels before and after 7days of exposure to air were kept aside for the determination of the following biomarkers: arachidonate-dependent cyclooxygenase (COX) and peroxidase (inflammation and oxidative stress), lipid metabolism (total lipids, esterases activity, HO-glycerol, acetyl CoA and phospholipase A2) and lipid damage (lipid peroxidation [LPO]). The results showed that air-time survival was decreased from a mean value of 18.5days to a mean value of 12days in mussels exposed to 2.5mg/L of nanoZnO although it was not lethal based on shell opening at concentrations below 50mg/L after 96h. In mussels exposed to zinc only, the median lethal concentration was estimated at 16mg/L (10-25 95% CI). The air-time survival did not significantly change in mussels exposed to the same concentration of dissolved Zn. Significant weight losses were observed at 0.5mg/L of nanoZnO and at 2.5mg/L for dissolved zinc chloride, and were also significantly correlated with air-time survival (r=0.53; p<0.01). Air exposure significantly increased COX activity in control mussels and in mussels exposed to 0.5mg/L of nanoZnO and zinc chloride. The data also suggested fatty acid breakdown and β-oxidation. Mussels exposed to contaminants are more susceptible to prolonged exposure to air during low water levels. Crown Copyright © 2015. Published by Elsevier Inc. All rights reserved.

  16. Zinc release from atomic layer deposited zinc oxide thin films and its antibacterial effect on Escherichia coli

    NASA Astrophysics Data System (ADS)

    Kääriäinen, M.-L.; Weiss, C. K.; Ritz, S.; Pütz, S.; Cameron, D. C.; Mailänder, V.; Landfester, K.

    2013-12-01

    Zinc oxide films have been grown by atomic layer deposition (ALD) at different reaction temperatures and in various thicknesses. Zinc-ion release has been examined from the ZnO films in water and in phosphate buffered saline solution (PBS). Additionally, the antibacterial effect has been studied on Escherichia coli. The thickness of the ZnO film or its crystal orientation did not affect the rate of dissolution. ALD grown aluminum oxide films were deposited on top of the ZnO films and they acted as an effective barrier against zinc dissolution. The bacteriostatic effect was not dependent on the film thickness but both 45 nm and 280 nm thick ZnO films significantly reduced bacterial attachment and growth in dark conditions by 99.7% and 99.5%, respectively. The results indicated that photoirradiation is not required for to enhance antibacterial properties of inorganic films and that the elution of zinc ions is probably responsible for the antibacterial properties of the ZnO films. The duration of the antibacterial effect of ZnO can be controlled by accurate control of the film thickness, which is a feature of ALD, and the onset of the antibacterial effect can be delayed by a time which can be adjusted by controlling the thickness of the Al2O3 blocking layer. This gives the possibility of obtaining dual antibacterial release profiles through a nanolaminate structure of these two materials.

  17. Rambutan peels promoted biomimetic synthesis of bioinspired zinc oxide nanochains for biomedical applications.

    PubMed

    Yuvakkumar, R; Suresh, J; Saravanakumar, B; Joseph Nathanael, A; Hong, Sun Ig; Rajendran, V

    2015-02-25

    A naturally occurring rambutan peel waste was employed to synthesis bioinspired zinc oxide nanochains. Rambutan peels has the ability of ligating zinc ions as a natural ligation agent resulting in zinc oxide nanochains formation due to its extended polyphenolic system over incubation period. Successful formation of zinc oxide nanochains was confirmed employing transmission electron microscopy studies. About 60% and ∼40% cell viability was lost and 50% and 10% morphological change was observed in 7 and 4 days incubated ZnO treated cells compared with control. Moreover, 50% and 55% of cell death was observed at 24 and 48 h incubation with 7 days treated ZnO cells and hence alters and disturbs the growth of cancer cells and could be used for liver cancer cell treatment.

  18. Dechlorination of Zinc Oxide Dust from Waelz Kiln by Microwave Roasting

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Zhang, Libo; Ma, Aiyuan; Peng, Jinhui; Li, Jing; Liu, Chenhui

    2015-05-01

    The new technology of dechlorination from zinc oxide dust by microwave roasting was investigated, combined with the advantages of microwave selective heating and based on a thermodynamic analysis of zinc and lead halides. The associated dechlorination reactions were discussed in details and the effect of all the influencing parameters such as roasting temperature, holding time, stirring speed and air flow were systematically investigated. Experimental results showed that zinc oxide dust dechlorination rate could reach over 95% and meet the requirements of wet smelting electrolysis, given an air flow of 300 L/h, a stirring speed of 60 r/min, a roasting temperature of 650 °C and a holding time of 30 min. Microwave roasting provided a new solution to the dechlorination from zinc oxide dust.

  19. Synthesis, characterization and enhanced antimicrobial activity of reduced graphene oxide-zinc oxide nanocomposite

    NASA Astrophysics Data System (ADS)

    Singh Rajaura, Rajveer; Sharma, Vinay; Shrivastava Ronin, Rishabh; Gupta, Deepak K.; Srivastava, Subodh; Agrawal, Kailash; Vijay, Y. K.

    2017-02-01

    In this work, we report a simple and facile one-pot chemical approach of the decoration of uniform zinc oxide nanoparticles (ZnO NPs) on reduced graphene oxide (GO) and a study of its antimicrobial activity. The nanocomposite was fully characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). TEM and SEM images clearly indicated the presence of Graphene sheets decorated with uniformly sized zinc oxide nanoparticles. Further, as an application of rGO-ZnO nanocomposites, their superior antibacterial activity was demonstrated on the Escherichia coli MTCC40 bacterial strain, using the standard disk diffusion method. This clearly showed that rGO-ZnO nanocomposites exhibited more pronounced antibacterial activity than rGO alone. This feature was revealed to be due to increased biocompatibility of PEGylated rGO-ZnO nanocomposites. In conclusion, the as-synthesized nanocomposite showed excellent antibacterial activity and has great potential for biomedical application.

  20. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Babar, A. R.; Deshamukh, P. R.; Deokate, R. J.; Haranath, D.; Bhosale, C. H.; Rajpure, K. Y.

    2008-07-01

    Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy, optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around ~85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 × 10-3 cm2 Ω-1.

  1. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO3) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO2) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)3](PF6)2, [Co(pby)3](PF6)3, LiClO4, and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO3 as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff = 56%) compared to ZnO working electrode (ff = 40%) under the same condition.

  2. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell.

    PubMed

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO(3)) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO(2)) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)(3)](PF(6))(2), [Co(pby)(3)](PF(6))(3), LiClO(4), and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO(3) as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff=56%) compared to ZnO working electrode (ff=40%) under the same condition.

  3. Human safety review of "nano" titanium dioxide and zinc oxide.

    PubMed

    Schilling, Karsten; Bradford, Bobbie; Castelli, Dominique; Dufour, Eric; Nash, J Frank; Pape, Wolfgang; Schulte, Stefan; Tooley, Ian; van den Bosch, Jeroen; Schellauf, Florian

    2010-04-01

    Based on the current weight of evidence of all available data, the risk for humans from the use of nano-structured titanium dioxide (TiO(2)) or zinc oxide (ZnO) currently used in cosmetic preparations or sunscreens is considered negligible. There is a large body of information that when viewed in its entirety is considered as sufficient to demonstrate that these nano-structured ultraviolet (UV) filters, irrespective of various treatments (coatings) or crystalline structure, can be regarded as safe for use at concentrations up to 25% in cosmetic products to protect the skin from harmful effects of solar UV radiation. "Nano" TiO(2) and ZnO formulated in topically applied sunscreen products exist as aggregates of primary particles ranging from 30-150 nm in size. These aggregates are bonded such that the force of sunscreen product application onto the skin would have no impact on their structure or result in the release of primary particles. Multiple studies have shown that under exaggerated test conditions neither nano-structured TiO(2) nor ZnO penetrates beyond the stratum corneum of skin. Further, the distribution and persistence of these nano-structured metal oxides is the same compared to larger pigment-grade (i.e., >100 nm) particles, demonstrating equivalence in the recognition and elimination of such material from the body. Finally, the in vitro genotoxic and photogenotoxic profiles of these nano-structured metal oxides are of no consequence to human health. Whereas the most logical, straightforward conclusion based on data from internationally-recognized guideline studies and current 20+ year history of human use is that nano-structured TiO(2) and ZnO are safe, there will continue to be questions as "nano" conjures images of technology gone awry. Despite this rather sober view, the public health benefits of sunscreens containing nano TiO(2) and/or ZnO outweigh human safety concerns for these UV filters.

  4. Effect of zinc oxide amounts on the properties and antibacterial activities of zeolite/zinc oxide nanocomposite.

    PubMed

    Alswat, Abdullah A; Ahmad, Mansor Bin; Saleh, Tawfik A; Hussein, Mohd Zobir Bin; Ibrahim, Nor Azowa

    2016-11-01

    Nanocomposites of zinc oxide loaded on a zeolite (Zeolite/ZnO NCs) were prepared using co-precipitation method. The ratio effect of ZnO wt.% to the Zeolite on the antibacterial activities was investigated. Various techniques were used for the nanocomposite characterization, including UV-vis, FTIR, XRD, EDX, FESEM and TEM. XRD patterns showed that ZnO peak intensity increased while the intensities of Zeolite peaks decreased. TEM images indicated a good distribution of ZnO-NPs onto the Zeolite framework and the cubic structure of the zeolite was maintained. The average particle size of ZnO-nanoparticles loaded on the surface of the Zeolite was in the range of 1-10nm. Moreover, Zeolite/ZnO NCs showed noticeable antibacterial activities against the tested bacteria; Gram- positive and Gram- negative bacteria, under normal light. The efficiency of the antibacterial increased with increasing the wt.% from 3 to 8 of ZnO NPs, and it reached 87% against Escherichia coli E266. Copyright © 2016 Elsevier B.V. All rights reserved.

  5. Nanomolar concentrations of zinc pyrithione increase cell susceptibility to oxidative stress induced by hydrogen peroxide in rat thymocytes.

    PubMed

    Oyama, Tomohiro M; Saito, Minoru; Yonezawa, Takayasu; Okano, Yoshiro; Oyama, Yasuo

    2012-06-01

    Zinc pyrithione is used as an antifouling agent. However, the environmental impacts of zinc pyrithione have recently been of concern. Zinc induces diverse actions during oxidative stress; therefore, we examined the effect of zinc pyrithione on rat thymocytes suffering from oxidative stress using appropriate fluorescent probes. The cytotoxicity of zinc pyrithione was not observed when the cells were incubated with 3 μM zinc pyrithione for 3 h. However, zinc pyrithione at nanomolar concentrations (10 nM or more) significantly increased the lethality of cells suffering from oxidative stress induced by 3 mM H(2)O(2). The application of zinc pyrithione alone at nanomolar concentrations increased intracellular Zn(2+) level and the cellular content of superoxide anions, and decreased the cellular content of nonprotein thiols. The simultaneous application of nanomolar zinc pyrithione and micromolar H(2)O(2) synergistically increased the intracellular Zn(2+) level. Therefore, zinc pyrithione at nanomolar concentrations may exert severe cytotoxic action on cells simultaneously exposed to chemicals that induce oxidative stress. If so, zinc pyrithione leaked from antifouling materials into surrounding environments would be a risk factor for aquatic ecosystems. Alternatively, zinc pyrithione under conditions of oxidative stress may become more potent antifouling ingredient.

  6. Recovering gallium from residual bayer process liquor

    NASA Astrophysics Data System (ADS)

    Afonso de Magalhães, Maria Elizabeth; Tubino, Matthieu

    1991-06-01

    Gallium is normally obtained by direct electrolysis as a by-product from Bayer process residual liquor at an aluminum processing plant. However, to permit any net accumulation of the metal, the gallium concentration must be at least about 0.3 g/l in the liquor. This article describes a continuous process of extraction with organic solvents and rhodamine-B, followed by a re-extraction step into aqueous media. The final product is a solid containing up to 18 wt.% Ga in a solid mixture of hydroxides and oxides of gallium and aluminum. This final product can then be electrolyzed to recover the gallium more efficiently.

  7. Zinc ferrite nanoparticle-induced cytotoxicity and oxidative stress in different human cells.

    PubMed

    Alhadlaq, Hisham A; Akhtar, Mohd Javed; Ahamed, Maqusood

    2015-01-01

    Zinc ferrite nanoparticles (NPs) have shown potential to be used in biomedical field such as magnetic resonance imaging and hyperthermia. However, there is limited information concerning the biological response of zinc ferrite NPs. This study was designed to evaluate the cytotoxicity of zinc ferrite NPs in three widely used in vitro cell culture models: human lung epithelial (A549), skin epithelial (A431) and liver (HepG2) cells. Zinc ferrite NPs were characterized by electron microscopy and dynamic light scattering. Cell viability, cell membrane damage, reactive oxygen species (ROS), glutathione (GSH), mitochondrial membrane potential (MMP), transcriptional level of apoptotic genes were determined in zinc ferrite NPs exposed cells. Zinc ferrite NPs were almost spherical shaped with an average size of 44 nm. Zinc ferrite NPs induced dose-dependent cytotoxicity (MTT and LDH) and oxidative stress (ROS and GSH) in all three types of cells in the dosage range of 10-40 µg/ml. Transcriptional level of tumor suppressor gene p53 and apoptotic genes (bax, caspase-3 and caspase-9) were up-regulated while the anti-apoptotic gene bcl-2 was down-regulated in cells after zinc ferrite NPs exposure. Furthermore, higher activity of caspase-3 and caspase-9 enzymes was also observed in zinc ferrite NPs treated cells. ROS generation, MMP loss and cell death in all three types of cells were abrogated by N-acetyl cysteine (ROS scavenger), which suggests that oxidative stress might be one of the plausible mechanisms of zinc ferrite NPs cytotoxicity. It is worth mentioning that there was marginally difference in the sensitivity of three cell lines against zinc ferrite NPs exposure. Cytotoxicity of zinc ferrite NPs were in following order; A549 > HepG2 > A431. Altogether, zinc ferrite NPs induced cytotoxicity and oxidative stress in A549, A431 and HepG2 cells, which is likely to be mediated through ROS generation. This study warrants further investigation to explore the potential

  8. Collector for recovering gallium from weapons plutonium

    SciTech Connect

    Philip, C.V.; Anthony, R.G.; Chokkaram, S.

    1998-09-01

    Currently, the separation of gallium from weapons plutonium involves the use of aqueous processing using either solvent extraction of ion exchange. However, this process generates significant quantities of liquid radioactive wastes. A Thermally Induced Gallium Removal process, or TIGR, developed by researchers at Los Alamos National Laboratories, is a simpler alternative to aqueous processing. This research examined this process, and the behavior of gallium suboxide, a vapor that is swept away by passing hydrogen/argon over gallium trioxide/plutonium oxide heated at 1100 C during the TIGR process. Through experimental procedures, efforts were made to prevent the deposition of corrosive gallium onto furnace and vent surfaces. Experimental procedures included three options for gallium removal and collection: (1) collection of gallium suboxide through use of a cold finger; (2) collection by in situ air oxidation; and (3) collection of gallium on copper. Results conclude all three collection mechanisms are feasible. In addition, gallium trioxide exists in three crystalline forms, and each form was encountered during each experiment, and that each form will have a different reactivity.

  9. The role of the oxide shell in the chemical functionalization of plasmonic gallium nanoparticles

    NASA Astrophysics Data System (ADS)

    Catalán-Gómez, S.; Briones, M.; Redondo-Cubero, A.; Palomares, F. J.; Nucciarelli, F.; Lorenzo, E.; Pau, J. L.

    2017-05-01

    Plasmonic Ga nanoparticles (NPs) were thermally oxidized at low temperature in order to increase the native Ga2O3 shell thickness and to improve their stability during the chemical functionalization. The optical, structural and chemical properties of the oxidized NPs have been studied by spectroscopic ellipsometry, scanning electron microscopy, grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy. A clear redshift of the peak wavelength is observed with the increasing annealing time due to the Ga2O3 thickness increase, and barely affecting the intensity of the plasmon resonance. This oxide layer enhances the stability of the NPs upon immersion in ethanol or water. The surface sensitivity properties of the as-grown and oxidized NPs were investigated by linking a thiol group from 6-Mercapto-1-hexanol through immersion. Ellipsometric spectra at the reversal polarization handedness (RPH) condition are in agreement with the Langmuir absorption model, indicating the formation of a thiol monolayer on the NPs.

  10. Antimicrobial effects of zinc oxide in an orthodontic bonding agent.

    PubMed

    Spencer, Clayton Glen; Campbell, Phillip M; Buschang, Peter H; Cai, John; Honeyman, Allen L

    2009-03-01

    To test the null hypothesis that the addition of zinc oxide (ZnO) has no effect on the antimicrobial benefits and shear bond strength of a light-cured resin-modified glass ionomer. ZnO was added to Fuji Ortho LC to create mixtures of 13% ZnO and 23.1% ZnO. Specimen discs of the modified bonding agent were incubated with Streptococcus mutans for 48 hours in a disc diffusion assay that was used to measure zones of bacterial inhibition. In addition, brackets were bonded to bovine deciduous incisors with the modified bonding agents, and shear bond strength was evaluated with a universal testing machine. The modified samples showed that antimicrobial activity increased as the concentration of ZnO increased. There were significant differences (P < .05) in antimicrobial activity. Post hoc tests showed that the antibacterial effects were 1.6 times greater with 23.1% ZnO than with 13% ZnO. There was no difference between Transbond and 0% ZnO (the negative control). After 1 month of daily rinsing, the antibacterial effects of 23.1% ZnO and 13% ZnO decreased 65% and 77%, respectively, but both maintained significant effects over the negative controls. There were no significant differences (P = .055) in shear bond strength between any of the mixture comparisons. The incorporation of ZnO into Fuji Ortho LC added antimicrobial properties to the original compound without significantly altering the shear bond strength. ZnO holds potential for preventing decalcification associated with orthodontic treatment.

  11. Antibacterial activity of dental composites containing zinc oxide nanoparticles.

    PubMed

    Aydin Sevinç, Berdan; Hanley, Luke

    2010-07-01

    The resin-based dental composites commonly used in restorations result in more plaque accumulation than other materials. Bacterial biofilm growth contributes to secondary caries and failure of resin-based dental composites. Methods to inhibit biofilm growth on dental composites have been sought for several decades. It is demonstrated here that zinc oxide nanoparticles (ZnO-NPs) blended at 10% (w/w) fraction into dental composites display antimicrobial activity and reduce growth of bacterial biofilms by roughly 80% for a single-species model dental biofilm. Antibacterial effectiveness of ZnO-NPs was assessed against Streptococcus sobrinus ATCC 27352 grown both planktonically and as biofilms on composites. Direct contact inhibition was observed by scanning electron microscopy and confocal laser scanning microscopy while biofilm formation was quantified by viable counts. An 80% reduction in bacterial counts was observed with 10% ZnO-NP-containing composites compared with their unmodified counterpart, indicating a statistically significant suppression of biofilm growth. Although, 20% of the bacterial population survived and could form a biofilm layer again, 10% ZnO-NP-containing composites maintained at least some inhibitory activity even after the third generation of biofilm growth. Microscopy demonstrated continuous biofilm formation for unmodified composites after 1-day growth, but only sparsely distributed biofilms formed on 10% ZnO-NP-containing composites. The minimum inhibitory concentration of ZnO-NPs suspended in S. sobrinus planktonic culture was 50 microg mL(-1). ZnO-NP-containing composites (10%) qualitatively showed less biofilm after 1-day-anaerobic growth of a three-species initial colonizer biofilm after being compared with unmodified composites, but did not significantly reduce growth after 3 days. (c) 2010 Wiley Periodicals, Inc.

  12. Antibacterial Activity of Dental Composites Containing Zinc Oxide Nanoparticles

    PubMed Central

    Sevinç, Berdan Aydin; Hanley, Luke

    2010-01-01

    The resin-based dental composites commonly used in restorations result in more plaque accumulation than other materials. Bacterial biofilm growth contributes to secondary caries and failure of resin-based dental composites. Methods to inhibit biofilm growth on dental composites have been sought for several decades. It is demonstrated here that zinc oxide nanoparticles (ZnO-NPs) blended at 10% (w/w) fraction into dental composites display antimicrobial activity and reduce growth of bacterial biofilms by roughly 80% for a single-species model dental biofilm. Antibacterial effectiveness of ZnO-NPs was assessed against Streptococcus sobrinus ATCC 27352 grown both planktonically and as biofilms on composites. Direct contact inhibition was observed by scanning electron microscopy and confocal laser scanning microscopy while biofilm formation was quantified by viable counts. An 80% reduction in bacterial counts was observed with 10% ZnO-NP-containing composites compared with their unmodified counterpart, indicating a statistically significant suppression of biofilm growth. Although, 20% of the bacterial population survived and could form a biofilm layer again, 10% ZnO-NP-containing composites maintained at least some inhibitory activity even after the third generation of biofilm growth. Microscopy demonstrated continuous biofilm formation for unmodified composites after one day growth, but only sparsely distributed biofilms formed on 10% ZnO-NP-containing composites. The minimum inhibitory concentration of ZnO-NPs suspended in S. sobrinus planktonic culture was 50 μg/ml. 10% ZnO-NP-containing composites qualitatively showed less biofilm after one day anaerobic growth of a three-species initial colonizer biofilm after when compared to unmodified composites, but did not significantly reduce growth after three days. PMID:20225252

  13. Alveolar Epithelial Cell Injury Due to Zinc Oxide Nanoparticle Exposure

    PubMed Central

    Kim, Yong Ho; Fazlollahi, Farnoosh; Kennedy, Ian M.; Yacobi, Nazanin R.; Hamm-Alvarez, Sarah F.; Borok, Zea; Kim, Kwang-Jin; Crandall, Edward D.

    2010-01-01

    Rationale: Although inhalation of zinc oxide (ZnO) nanoparticles (NPs) is known to cause systemic disease (i.e., metal fume fever), little is known about mechanisms underlying injury to alveolar epithelium. Objectives: Investigate ZnO NP–induced injury to alveolar epithelium by exposing primary cultured rat alveolar epithelial cell monolayers (RAECMs) to ZnO NPs. Methods: RAECMs were exposed apically to ZnO NPs or, in some experiments, to culture fluid containing ZnCl2 or free Zn released from ZnO NPs. Transepithelial electrical resistance (RT) and equivalent short-circuit current (IEQ) were assessed as functions of concentration and time. Morphologic changes, lactate dehydrogenase release, cell membrane integrity, intracellular reactive oxygen species (ROS), and mitochondrial activity were measured. Measurements and Main Results: Apical exposure to 176 μg/ml ZnO NPs decreased RT and IEQ of RAECMs by 100% over 24 hours, whereas exposure to 11 μg/ml ZnO NPs had little effect. Changes in RT and IEQ caused by 176 μg/ml ZnO NPs were irreversible. ZnO NP effects on RT yielded half-maximal concentrations of approximately 20 μg/ml. Apical exposure for 24 hours to 176 μg/ml ZnO NPs induced decreases in mitochondrial activity and increases in lactate dehydrogenase release, permeability to fluorescein sulfonic acid, increased intracellular ROS, and translocation of ZnO NPs from apical to basolateral fluid (most likely across injured cells and/or damaged paracellular pathways). Conclusions: ZnO NPs cause severe injury to RAECMs in a dose- and time-dependent manner, mediated, at least in part, by free Zn released from ZnO NPs, mitochondrial dysfunction, and increased intracellular ROS. PMID:20639441

  14. Decomposition of Organometal Halide Perovskite Films on Zinc Oxide Nanoparticles.

    PubMed

    Cheng, Yuanhang; Yang, Qing-Dan; Xiao, Jingyang; Xue, Qifan; Li, Ho-Wa; Guan, Zhiqiang; Yip, Hin-Lap; Tsang, Sai-Wing

    2015-09-16

    Solution processed zinc oxide (ZnO) nanoparticles (NPs) with excellent electron transport properties and a low-temperature process is a viable candidate to replace titanium dioxide (TiO2) as electron transport layer to develop high-efficiency perovskite solar cells on flexible substrates. However, the number of reported high-performance perovskite solar cells using ZnO-NPs is still limited. Here we report a detailed investigation on the chemistry and crystal growth of CH3NH3PbI3 perovskite on ZnO-NP thin films. We find that the perovskite films would severely decompose into PbI2 upon thermal annealing on the bare ZnO-NP surface. X-ray photoelectron spectroscopy (XPS) results show that the hydroxide groups on the ZnO-NP surface accelerate the decomposition of the perovskite films. To reduce the decomposition, we introduce a buffer layer in between the ZnO-NPs and perovskite layers. We find that a commonly used buffer layer with small molecule [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) can slow down but cannot completely avoid the decomposition. On the other hand, a polymeric buffer layer using poly(ethylenimine) (PEI) can effectively separate the ZnO-NPs and perovskite, which allows larger crystal formation with thermal annealing. The power conversion efficiencies of perovskite photovoltaic cells are significantly increased from 6.4% to 10.2% by replacing PC61BM with PEI as the buffer layer.

  15. Zinc oxide piezoelectric nano-generators for low frequency applications

    NASA Astrophysics Data System (ADS)

    Nour, E. S.; Nur, O.; Willander, M.

    2017-06-01

    Piezoelectric Zinc Oxide (ZnO) nanogenerators (NGs) have been fabricated for low frequency (<100 Hz) energy harvesting applications. Different types of NGs based on ZnO nanostructures have been carefully developed, and studied for testing under different kinds of low frequency mechanical deformations. Well aligned ZnO nanowires (NWs) possessing high piezoelectric coefficient were synthesized on flexible substrates using the low temperature hydrothermal route. These ZnO NWs were then used in different configurations to demonstrate different low frequency energy harvesting devices. Using piezoelectric ZnO NWs, we started with the fabrication of a sandwiched NG for a handwriting enabled energy harvesting device based on a thin silver layer coated paper substrate. Such device configurations can be used for the development of electronic programmable smart paper. Further, we developed this NG to work as a triggered sensor for a wireless system using footstep pressure. These studies demonstrate the feasibility of using a ZnO NWs piezoelectric NG as a low-frequency self- powered sensor, with potential applications in wireless sensor networks. After that, we investigated and fabricated a sensor on a PEDOT: PSS plastic substrate using a one-sided growth and double-sided growth technique. For the first growth technique, the fabricated NG has been used as a sensor for an acceleration system; while the fabricated NG by the second technique works as an anisotropic direction sensor. This fabricated configuration showed stability for sensing and can be used in surveillance, security, and auto-Mobil applications. In addition to that, we investigated the fabrication of a sandwiched NG on plastic substrates. Finally, we demonstrated that doping ZnO NWs with extrinsic elements (such as Ag) will lead to the reduction of the piezoelectric effect due to the loss of crystal symmetry. A brief summary into future opportunities and challenges is also presented.

  16. Viscosity, density, and thermal conductivity of aluminum oxide and zinc oxide nanolubricants.

    PubMed

    Kedzierski, M A; Brignoli, R; Quine, K T; Brown, J S

    2017-02-01

    This paper presents liquid kinematic viscosity, density, and thermal conductivity measurements of eleven different synthetic polyolester-based nanoparticle nanolubricants (dispersions) at atmospheric pressure over the temperature range 288 K to 318 K. Aluminum oxide (Al2O3) and zinc oxide (ZnO) nanoparticles with nominal diameters of 127 nm and 135 nm, respectively, were investigated. A good dispersion of the spherical and non-spherical nanoparticles in the lubricant was maintained with a surfactant. Viscosity, density, and thermal conductivity measurements were made for the neat lubricant along with eleven nanolubricants with differing nanoparticle and surfactant mass fractions. Existing models were used to predict kinematic viscosity (±20%), thermal conductivity (±1%), and specific volume (±6%) of the nanolubricant as a function of temperature, nanoparticle mass fraction, surfactant mass fraction, and nanoparticle diameter. The liquid viscosity, density and thermal conductivity were shown to increase with respect to increasing nanoparticle mass fraction.

  17. Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

    NASA Astrophysics Data System (ADS)

    Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

    2017-02-01

    Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

  18. High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers.

    PubMed

    Yusoff, Abd Rashid bin Mohd; Kim, Hyeong Pil; Jang, Jin

    2014-01-01

    We report air stable inverted organic photovoltaics (OPVs) incorporating graphene oxide (GO) and solution processed zinc oxide (ZnO) as hole transport and electron transport layers, respectively. Both the hole transport layer and the electron transport layer (HTL and ETL) are of advantage in high transparency and environmental stability. The use of GO and ZnO in poly(2,7-carbazole) derivative (PCDTBT):fullerene derivative (PC₇₀BM)-based inverted OPVs leads to an improved device stability and enhanced high open circuit voltage (V(oc)) of 0.81 V, a short-circuit current density (J(sc)) of 14.10 mA cm(-2), and a fill factor (FF) of 54.44 along with a power conversion efficiency of 6.20%.

  19. High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Mohd Yusoff, Abd Rashid Bin; Kim, Hyeong Pil; Jang, Jin

    2014-01-01

    We report air stable inverted organic photovoltaics (OPVs) incorporating graphene oxide (GO) and solution processed zinc oxide (ZnO) as hole transport and electron transport layers, respectively. Both the hole transport layer and the electron transport layer (HTL and ETL) are of advantage in high transparency and environmental stability. The use of GO and ZnO in poly(2,7-carbazole) derivative (PCDTBT):fullerene derivative (PC70BM)-based inverted OPVs leads to an improved device stability and enhanced high open circuit voltage (Voc) of 0.81 V, a short-circuit current density (Jsc) of 14.10 mA cm-2, and a fill factor (FF) of 54.44 along with a power conversion efficiency of 6.20%.

  20. Curcumin Attenuates Hepatotoxicity Induced by Zinc Oxide Nanoparticles in Rats

    PubMed Central

    Khorsandi, Layasadat; Mansouri, Esrafil; Orazizadeh, Mahmoud; Jozi, Zahra

    2016-01-01

    Background: Zinc oxide nanoparticles (NZnO) are increasingly used in modern life. Most metal nanoparticles have adverse effects on the liver. Aims: To explore the protective action of curcumin (Cur) against hepatotoxicity induced by NZnO in rats. Study Design: Animal experimentation. Methods: Control group animals received normal saline, while the Cur group animals were treated with 200 mg/kg of Cur orally for 21 days. NZnO-intoxicated rats received 50 mg/kg of NZnO for 14 days by gavage method. In the NZnO+Cur group, rats were pretreated with Cur for 7 days before NZnO administration. Plasma activities of Alanine aminotransferase (ALT), aspartate aminotransferase (AST) and alkaline phosphatase (ALP) were measured as biomarkers of hepatotoxicity. Hepatic levels of malondialdehyde (MDA) and superoxide dismutase (SOD) and glutathione peroxidase (GPx) activities were measured for detection of oxidative stress in liver tissue. Histological changes and apoptosis in liver tissue were studied by using Hematoxylin-eosin staining and the transferase dUTP nick end labeling (TUNEL) method. Results: NZnO induced a significant increase in plasma AST (2.8-fold), ALT (2.7-fold) and ALP (1.97-fold) activity in comparison to the control group (p<0.01). NZnO increased MDA content and reduced SOD and GPx activities. NZnO caused liver damage including centrilobular necrosis and microvesicular steatosis. The percentage of apoptosis in hepatocytes was increased in NZnO-treated rats (p<0.01). Pre-treatment of Cur significantly reduced lipid peroxidation (39%), increased SOD (156%) and GPx (26%) activities, and attenuated ALT (47%), AST (41%) and ALP (30%) activities. Pre-treatment with Cur also decreased the histology changes and apoptotic index of hepatocytes (p<0.05). Conclusion: These findings indicate that Cur effectively protects against NZnO-induced hepatotoxicity in rats. However, future studies are required to propose Cur as a potential protective agent against hepatotoxicity

  1. Tunable infrared absorption and visible transparency of colloidal aluminum-doped zinc oxide nanocrystals.

    PubMed

    Buonsanti, Raffaella; Llordes, Anna; Aloni, Shaul; Helms, Brett A; Milliron, Delia J

    2011-11-09

    Plasmonic nanocrystals have been attracting a lot of attention both for fundamental studies and different applications, from sensing to imaging and optoelectronic devices. Transparent conductive oxides represent an interesting class of plasmonic materials in addition to metals and vacancy-doped semiconductor quantum dots. Herein, we report a rational synthetic strategy of high-quality colloidal aluminum-doped zinc oxide nanocrystals. The presence of substitutional aluminum in the zinc oxide lattice accompanied by the generation of free electrons is proved for the first time by tunable surface plasmon absorption in the infrared region both in solution and in thin films.

  2. Feeding Low or Pharmacological Concentrations of Zinc Oxide Changes the Hepatic Proteome Profiles in Weaned Piglets

    PubMed Central

    Bondzio, Angelika; Pieper, Robert; Gabler, Christoph; Weise, Christoph; Schulze, Petra; Zentek, Juergen; Einspanier, Ralf

    2013-01-01

    Pharmacological levels of zinc oxide can promote growth and health of weaning piglets, but the underlying molecular mechanisms are yet not fully understood. The aim of this study was to determine changes in the global hepatic protein expression in response to dietary zinc oxide in weaned piglets. Nine half-sib piglets were allocated to three dietary zinc treatment groups (50, 150, 2500 mg/kg dry matter). After 14 d, pigs were euthanized and liver samples taken. The increase in hepatic zinc concentration following dietary supplementation of zinc was accompanied by up-regulation of metallothionein mRNA and protein expression. Global hepatic protein profiles were obtained by two-dimensional difference gel electrophoresis following matrix-assisted laser desorption ionization/time-of-flight mass spectrometry. A total of 15 proteins were differentially (P<0.05) expressed between groups receiving control (150 mg/kg) or pharmacological levels of zinc (2500 mg/kg) with 7 down- (e.g. arginase1, thiosulfate sulfurtransferase, HSP70) and 8 up-regulated (e.g. apolipoprotein AI, transferrin, C1-tetrahydrofolate synthase) proteins. Additionally, three proteins were differentially expressed with low zinc supply (50 mg/kg Zn) in comparison to the control diet. The identified proteins were mainly associated with functions related to cellular stress, transport, metabolism, and signal transduction. The differential regulation was evaluated at the mRNA level and a subset of three proteins of different functional groups was selected for confirmation by western blotting. The results of this proteomic study suggest that zinc affects important liver functions such as blood protein secretion, protein metabolism, detoxification and redox homeostasis, thus supporting the hypothesis of intermediary effects of pharmacological levels of zinc oxide fed to pigs. PMID:24282572

  3. Hot gas desulfurization with oxides of zinc, iron, and vanadium

    SciTech Connect

    Akyurtlu, J.F.; Akyurtlu, A.

    1992-08-01

    The objective of this study is to develop an improved sorbent which can reduce H{sub 2}S levels up to 1 ppmv or less, which can stabilize zinc, and produce economically recoverable amounts of elemental sulfur during regeneration. For this purpose, the desulfurization performance of sorbents prepared by the addition of various amounts of V{sub 2}O{sub 5} to the zinc ferrite sorbent is investigated.

  4. Hot gas desulfurization with oxides of zinc, iron, and vanadium

    SciTech Connect

    Akyurtlu, J.F.; Akyurtlu, A.

    1992-01-01

    The objective of this study is to develop an improved sorbent which can reduce H{sub 2}S levels up to 1 ppmv or less, which can stabilize zinc, and produce economically recoverable amounts of elemental sulfur during regeneration. For this purpose, the desulfurization performance of sorbents prepared by the addition of various amounts of V{sub 2}O{sub 5} to the zinc ferrite sorbent is investigated.

  5. Photocurrent spectroscopy of cadmium sulfide/plastic, cadmium sulfide/glass, and zinc telluride/gallium arsenide hetero-pairs formed with pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Acharya, Krishna Prasad

    This dissertation presents photocurrent (PC) spectroscopy of thin-film cadmium sulfide (CdS) on plastic, CdS on glass, and zinc telluride (ZnTe) on gallium arsenide (GaAs) hetero-pairs. All samples have been prepared with pulsed-laser deposition (PLD) and the thesis is organized into three principal sections. The first section presents the PLD essentials and characterization of CdS thin films on transparent plastic substrates. The second part focuses on the exploitation of CdS films on glass to quench or modulate alternating photocurrent (APC) by additional constant blue light illumination. Finally, PC spectra modification of n-GaAs due to ZnTe PLD will be investigated. First, the merger of a transparent plastic substrate with thin-film CdS for photonic application was realized using low-temperature PLD, where low-temperature PLD means the substrates were not externally heated. Although plastic is not considered to be a favored substrate material for semiconductor thin-film formation, the deposited CdS film possessed good adhesion to the plastic substrates and showed a blue-shifted photosensitivity with peak at 2.54 eV. The CdS deposition rate was monitored at different laser fluences and the maximum rate was found at 2.68 J/cm2. The visualization of the surface using an atomic force microscope (AFM) revealed its mosaic structure and electron probe microanalysis showed that target composition was maintained in the film. The study of thickness distribution revealed that the film deposition area is significantly increased with increase in laser fluence. The achieved results demonstrate the capability of PLD to form novel heterostructures with appealing and useful technological properties such as plasticity and low weight. In the second part, APC control via blue light illumination employing thin-film PLD CdS on a glass is introduced. In fact, the APC driven through the CdS film in conjunction with bias was quenched when the sample was additionally illuminated with a

  6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    PubMed

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  7. Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

    PubMed Central

    2013-01-01

    We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

  8. Effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in streptozotocin-induced diabetic rats

    PubMed Central

    Asri-Rezaei, Siamak; Tamaddonfard, Esmaeal; Ghasemsoltani-Momtaz, Behnaz; Erfanparast, Amir; Gholamalipour, Sima

    2015-01-01

    Objectives: Crocin is one of constituents of saffron and has antioxidant property. Zinc chloride is one of the common compounds of zinc with antioxidant activity. The present study was aimed to investigate separate and combined treatment effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in diabetic rats. Materials and Methods: Diabetes was induced by intraperitoneal (i.p.) injection of 50 mg/kg of streptozotocin (STZ) and was confirmed by blood glucose levels higher than 250 mg/dL. After confirmation of diabetes, injections (i.p.) of crocin and zinc chloride were performed for six weeks. At the end of the experiment, blood levels of zinc, glucose, insulin, malodialdehyde (MDA), and total antioxidant capacity (TAC) were measured. ‎ Results: Crocin (25 and 50 mg/kg) and zinc chloride (5 mg/kg) significantly recovered the decreased levels of zinc, insulin, and TAC and improved the increased levels of glucose and MDA in STZ-induced diabetic rats. In a combination treatment performed with an ineffective dose of crocin (12.5 mg/kg) and a low dose of zinc chloride (1.25 mg/kg), improving effects were observed on the above-mentioned biochemical parameters.‎ Conclusion: The results indicated that separate and combined treatments with crocin and zinc chloride produced improving effects on the blood levels of zinc, glucose, insulin, MDA and TAC in STZ-induced diabetic rats. PMID:26468459

  9. Comparison of Calcium Phosphate and Zinc Oxide Nanoparticles as Dermal Penetration Enhancers for Albumin.

    PubMed

    Shokri, Narges; Javar, H A

    2015-01-01

    Dermal drug delivery is highly preferred by patients due to its several advantages. Protein therapeutics have attracted huge attention recently. Since dermal delivery of proteins encounter problems, in this investigation, zinc oxide nanoparticles and calcium phosphate nanoparticles were compared as enhancers for dermal permeation of albumin. Albumin was applied simultaneously with zinc oxide nanoparticles or calcium phosphate nanoparticles on pieces of mouse skin. Skin permeation of albumin over time was determined using a diffusion cell. Skin distribution of the nanoparticles and albumin over time was determined by optical and fluorescence microscopy. Zinc oxide nanoparticles and calcium phosphate nanoparticles acted as enhancers for skin permeation of albumin. Cumulative permeated albumin in presence of zinc oxide nanoparticles after 0, 0.5, 1, 1.5 and 2 h, were 0±0, 11.7±3.3, 21.1±3.5, 40.2±3.6 and 40.2±3.6 mg, respectively and in presence of calcium phosphate nanoparticles were 0±0, 20.9±7.4, 33.8±5.5, 33.8±3.7 and 33.8±3.7 mg, respectively. After 0.5 h, little amount of albumin was permeated in presence of every kind of the nanoparticles. After 0.5 or 1 h, the permeated albumin in presence of calcium phosphate nanoparticles was more than that in presence of zinc oxide nanoparticles and after 1.5 h the permeated albumin in presence of zinc oxide nanoparticles was more than that in presence of calcium phosphate nanoparticles. Images of skin distribution of the two nanoparticles over time, were somewhat different and distribution of albumin correlated with the distribution of the nanoparticles alone. The profiles of albumin permeation (in presence of each of the nanoparticles) versus time was delayed and linear for both nanoparticles while the slope for calcium phosphate nanoparticles was higher than zinc oxide nanoparticles. The enhancer effect of zinc oxide nanoparticles was stronger while the enhancer effect of calcium phosphate nanoparticles was

  10. Comparison of Calcium Phosphate and Zinc Oxide Nanoparticles as Dermal Penetration Enhancers for Albumin

    PubMed Central

    Shokri, Narges; Javar, H. A.

    2015-01-01

    Dermal drug delivery is highly preferred by patients due to its several advantages. Protein therapeutics have attracted huge attention recently. Since dermal delivery of proteins encounter problems, in this investigation, zinc oxide nanoparticles and calcium phosphate nanoparticles were compared as enhancers for dermal permeation of albumin. Albumin was applied simultaneously with zinc oxide nanoparticles or calcium phosphate nanoparticles on pieces of mouse skin. Skin permeation of albumin over time was determined using a diffusion cell. Skin distribution of the nanoparticles and albumin over time was determined by optical and fluorescence microscopy. Zinc oxide nanoparticles and calcium phosphate nanoparticles acted as enhancers for skin permeation of albumin. Cumulative permeated albumin in presence of zinc oxide nanoparticles after 0, 0.5, 1, 1.5 and 2 h, were 0±0, 11.7±3.3, 21.1±3.5, 40.2±3.6 and 40.2±3.6 mg, respectively and in presence of calcium phosphate nanoparticles were 0±0, 20.9±7.4, 33.8±5.5, 33.8±3.7 and 33.8±3.7 mg, respectively. After 0.5 h, little amount of albumin was permeated in presence of every kind of the nanoparticles. After 0.5 or 1 h, the permeated albumin in presence of calcium phosphate nanoparticles was more than that in presence of zinc oxide nanoparticles and after 1.5 h the permeated albumin in presence of zinc oxide nanoparticles was more than that in presence of calcium phosphate nanoparticles. Images of skin distribution of the two nanoparticles over time, were somewhat different and distribution of albumin correlated with the distribution of the nanoparticles alone. The profiles of albumin permeation (in presence of each of the nanoparticles) versus time was delayed and linear for both nanoparticles while the slope for calcium phosphate nanoparticles was higher than zinc oxide nanoparticles. The enhancer effect of zinc oxide nanoparticles was stronger while the enhancer effect of calcium phosphate nanoparticles was

  11. The interaction of zinc oxide-based dental cements with aqueous solutions of potassium fluoride.

    PubMed

    Pawluk, K; Booth, S E; Coleman, N J; Nicholson, J W

    2008-09-01

    The ability of zinc oxide-based dental cements (zinc phosphate and zinc polycarboxylate) to take up fluoride from aqueous solution has been studied. Only zinc phosphate cement was found to take up any measurable fluoride after 5 h exposure to the solutions. The zinc oxide filler of the zinc phosphate also failed to take up fluoride from solution. The key interaction for this uptake was thus shown to involve the phosphate groups of the set cement. However, whether this took the form of phosphate/fluoride exchange, or the formation of oxyfluoro-phosphate groups was not clear. Fluoride uptake followed radicaltime kinetics for about 2 h in some cases, but was generally better modelled by the Elovich equation, dq(t)/dt = alpha exp(-betaq(t)). Values for alpha varied from 3.80 to 2.48 x 10(4), and for beta from 7.19 x 10(-3) to 0.1946, though only beta showed any sort of trend, becoming smaller with increasing fluoride concentration. Fluoride was released from the zinc phosphate cements in processes that were diffusion based up to M(t)/M(infinity) of about 0.4. No further release occurred when specimens were placed in fresh volumes of deionised water. Only a fraction of the fluoride taken up was re-released, demonstrating that most of the fluoride taken up becomes irreversibly bound within the cement.

  12. Solubility of nano-zinc oxide in environmentally and biologically important matrices

    PubMed Central

    Reed, Robert B.; Ladner, David A.; Higgins, Christopher P.; Westerhoff, Paul; Ranville, James F.

    2011-01-01

    Increasing manufacture and use of engineered nanoparticles (NPs) is leading to a greater probability for release of ENPs into the environment and exposure to organisms. In particular, zinc oxide (ZnO) is toxic, although it is unclear whether this toxicity is due to the zinc oxide nanoparticles (ZnO), dissolution to Zn2+, or some combination thereof. The goal of this study was to determine the relative solubilites of both commercially available and in-house synthesized ZnO in matrices used for environmental fate and transport or biological toxicity studies. Dissolution of ZnO was observed in nanopure water (7.18– 7.40 mg/L dissolved Zn, as measured by filtration) and Roswell Park Memorial Institute medium (RPMI-1640) (~5 mg/L), but much more dissolution was observed in Dulbecco’s Modified Eagle’s Medium (DMEM), where the dissolved Zn concentration exceeded 34 mg/L. Moderately hard water exhibited low zinc solubility, likely due to precipitation of a zinc carbonate solid phase. Precipitation of a zinc-containing solid phase in RPMI also appeared to limit zinc solubility. Equilibrium conditions with respect to ZnO solubility were not apparent in these matrices, even after more than 1,000 h of dissolution. These results suggest that solution chemistry exerts a strong influence on ZnO dissolution and can result in limits on zinc solubility due to precipitation of less soluble solid phases. PMID:21994124

  13. Defects control in the synthesis of low-dimensional zinc oxide

    NASA Astrophysics Data System (ADS)

    Takaki, Hidetaka; Inoue, Shuhei; Matsumura, Yukihiko

    2017-09-01

    Zinc oxide (ZnO) has recently gained interest in the semiconductor field. Controlling defects can lead to band-gap engineering and this concept was explored for the synthesis of ZnO with various types of defects. In this study, we describe a method to synthesize quasi one-dimensional ZnO using gold nanoparticles as a template, using which we successfully controlled defect types like oxygen vacancies, oxygen interstitials, and zinc interstitials. Because the rate determination was the generation of Zn, it will be possible to synthesize ZnO with only zinc interstitials by independent supply of CO and O2.

  14. Anticancer activity of fungal L-asparaginase conjugated with zinc oxide nanoparticles.

    PubMed

    Baskar, G; Chandhuru, J; Sheraz Fahad, K; Praveen, A S; Chamundeeswari, M; Muthukumar, T

    2015-01-01

    Demand for developing novel delivery system for cancer treatment has increased due to the side effects present in intravenous injection of L-asparaginase. Nanoparticles are used for delivering the drugs to its destination in cancer cure. Nanobiocomposite of zinc oxide nanoparticles conjugated with L-asparaginase was produced by Aspergillus terreus and was confirmed using maximum UV-Vis absorption at 340 nm in the present work. The presence of functional groups like OH, C-H, -C=N and C=O on the surface of nanobiocomposite was found from Fourier transform infrared spectrum analysis. Size of the produced nanocomposite was found in the range of 28-63 nm using scanning electron microscope. The crystalline nature of the synthesized nanobiocomposites was confirmed by X-ray diffraction analysis. The presence of zinc oxide on synthesized nanobiocomposite was confirmed by energy dispersive spectrum analysis. The anti-cancerous nature of the synthesized zinc oxide conjugated L-asparaginase nanobiocomposite on MCF-7 cell line was studied using MTT assay. The viability of the MCF-7 cells was decreased to 35.02 % when it was treated with L-asparaginase conjugated zinc oxide nanobiocomposite. Hence it is proved that the synthesized nanobiocomposites of zinc oxide conjugated L-asparaginase has good anti-cancerous activity.

  15. Comparing Inhaled Ultrafine versus Fine Zinc Oxide Particles in Healthy Adults

    PubMed Central

    Beckett, William S.; Chalupa, David F.; Pauly-Brown, Andrea; Speers, Donna M.; Stewart, Judith C.; Frampton, Mark W.; Utell, Mark J.; Huang, Li-Shan; Cox, Christopher; Zareba, Wojciech; Oberdörster, Günter

    2005-01-01

    Rationale: Zinc oxide is a common, biologically active constituent of particulate air pollution as well as a workplace toxin. Ultrafine particles (< 0.1 μm diameter) are believed to be more potent than an equal mass of inhaled accumulation mode particles (0.1–1.0 μm diameter). Objectives: We compared exposure–response relationships for respiratory, hematologic, and cardiovascular endpoints between ultrafine and accumulation mode zinc oxide particles. Methods: In a human inhalation study, 12 healthy adults inhaled 500 μg/m3 of ultrafine zinc oxide, the same mass of fine zinc oxide, and filtered air while at rest for 2 hours. Measurements and Main Results: Preexposure and follow-up studies of symptoms, leukocyte surface markers, hemostasis, and cardiac electrophysiology were conducted to 24 hours post-exposure. Induced sputum was sampled 24 hours after exposure. No differences were detected between any of the three exposure conditions at this level of exposure. Conclusions: Freshly generated zinc oxide in the fine or ultrafine fractions inhaled by healthy subjects at rest at a concentration of 500 μg/m3 for 2 hours is below the threshold for acute systemic effects as detected by these endpoints. PMID:15735058

  16. The Porphyromonas gingivalis HmuY haemophore binds gallium(iii), zinc(ii), cobalt(iii), manganese(iii), nickel(ii), and copper(ii) protoporphyrin IX but in a manner different to iron(iii) protoporphyrin IX.

    PubMed

    Wójtowicz, Halina; Bielecki, Marcin; Wojaczyński, Jacek; Olczak, Mariusz; Smalley, John W; Olczak, Teresa

    2013-04-01

    Porphyromonas gingivalis, a major etiological agent of chronic periodontitis, acquires haem from host haemoproteins through a haem transporter HmuR and a haemophore HmuY. The aim of this study was to analyse the binding specificity of HmuY towards non-iron metalloporphyrins which may be employed as antimicrobials to treat periodontitis. HmuY binds gallium(iii), zinc(ii), cobalt(iii), manganese(iii), nickel(ii), and copper(ii) protoporphyrin IX but in a manner different to iron(iii) protoporphyrin IX which uses His(134) and His(166) as axial ligands. The metal ions in Ga(iii)PPIX and Zn(ii)PPIX can accept only His(166) as an axial ligand, whereas nickel(ii) and copper(ii) interact exclusively with His(134). Two forms of pentacoordinate manganese(iii) are present in the Mn(iii)PPIX-HmuY complex since the metal accepts either His(134) or His(166) as a single axial ligand. The cobalt ion is hexacoordinate in the Co(iii)PPIX-HmuY complex and binds His(134) and His(166) as axial ligands; however, some differences in their environments exist. Despite different coordination modes of the central metal ion, gallium(iii), zinc(ii), cobalt(iii), and manganese(iii) protoporphyrin IX bound to the HmuY haemophore cannot be displaced by excess haem. All of the metalloporphyrins examined bind to a P. gingivalis wild-type strain with higher ability compared to a mutant strain lacking a functional hmuY gene, thus corroborating binding of non-iron metalloporphyrins to purified HmuY protein. Our results further clarify the basis of metalloporphyrin acquisition by P. gingivalis and add to understanding of the interactions with porphyrin derivatives which exhibit antimicrobial activity against P. gingivalis.

  17. Microwave and millimeter wave dielectric permittivity and magnetic permeability of epsilon-gallium-iron-oxide nano-powders

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2015-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized, which have ferromagnetic resonant frequencies appearing over the frequency range of 30 GHz to 150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the sol-gel method. The particle sizes are observed to be smaller than 100 nm. In this paper, in-waveguide transmission and reflection method and the free space magneto-optical approach have been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. These techniques enable to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the microwave and millimeter wave frequency range from single set of direct measurements. The complex dielectric permittivity and magnetic permeability spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  18. Synthesis and catalytic properties of mesoporous, bifunctional, gallium-niobium mixed oxides.

    PubMed

    Deshmane, Chinmay A; Jasinski, Jacek B; Ratnasamy, Paul; Carreon, Moises A

    2010-09-14

    Thermally stable mesoporous Ga-Nb mixed oxides, active in both acid-catalysed and redox reactions have been synthesized via self-assembly hydrothermal assisted approach. Methyl oleate, a major component of biodiesels, undergoes double bond and skeletal isomerisation as well as dehydrogenation over these novel mesophases.

  19. Preliminary study on zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction

    NASA Astrophysics Data System (ADS)

    Wen, Yue-Hua; Cheng, Jie; Ning, Shang-Qi; Yang, Yu-Sheng

    A zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction is reported in this paper. It possesses functions of both zincate reduction and electrochemical preparation, showing the potential for increasing the electronic energy utilization. Charge/discharge tests and scanning electron microscopy (SEM) micrographs reveal that when a nickel sheet plated with the high-H 2-overpotential metal, cadmium, was used as the negative substrate electrode, the dendritic formation and hydrogen evolution are suppressed effectively, and granular zinc deposits become larger but relatively dense with the increase of charge time. The performance of batteries is favorable even if the charge time is as long as 5 h at the current density of 20 mA cm -2. Better discharge performance is achieved using a 'cavity-opening' configuration for the discharge cell rather than a 'gas-introducing' configuration. The highest energy efficiency is up to 59.2%. That is, the energy consumed by organic electro-synthesis can be recovered by 59.2%. Cyclic voltammograms show that the sintered nickel electrode exhibits a good electro-catalysis activity for the propanol oxidation. The increase of propanol concentration conduces to an enhancement in the organic electro-synthesis efficiency. The organic electro-synthesis current efficiency of 82% can be obtained.

  20. Zinc (hydr)oxide/graphite oxide/AuNPs composites: role of surface features in H₂S reactive adsorption.

    PubMed

    Giannakoudakis, Dimitrios A; Bandosz, Teresa J

    2014-12-15

    Zinc hydroxide/graphite oxide/AuNPs composites with various levels of complexity were synthesized using an in situ precipitation method. Then they were used as H2S adsorbents in visible light. The materials' surfaces were characterized before and after H2S adsorption by various physical and chemical methods (XRD, FTIR, thermal analysis, potentiometric titration, adsorption of nitrogen and SEM/EDX). Significant differences in surface features and synergistic effects were found depending on the materials' composition. Addition of graphite oxide and the deposition of gold nanoparticles resulted in a marked increase in the adsorption capacity in comparison with that on the zinc hydroxide and zinc hydroxide/AuNP. Addition of AuNPs to zinc hydroxide led to a crystalline ZnO/AuNP composite while the zinc hydroxide/graphite oxide/AuNP composite was amorphous. The ZnOH/GO/AuNPs composite exhibited the greatest H2S adsorption capacity due to the increased number of OH terminal groups and the conductive properties of GO that facilitated the electron transfer and consequently the formation of superoxide ions promoting oxidation of hydrogen sulfide. AuNPs present in the composite increased the conductivity, helped with electron transfer to oxygen, and prevented the fast recombination of the electrons and holes. Copyright © 2014 Elsevier Inc. All rights reserved.