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Sample records for gallium zinc oxide

  1. Pure spin current transport in gallium doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Althammer, Matthias; Mukherjee, Joynarayan; Geprägs, Stephan; Goennenwein, Sebastian T. B.; Opel, Matthias; Ramachandra Rao, M. S.; Gross, Rudolf

    2017-01-01

    We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a 12 nm thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to the predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures.

  2. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  3. Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Chen, Wei-Tsung; Hsueh, Hsiu-Wen; Kao, Shih-Chin; Ku, Ming-Che; Tsai, Chuang-Chuang; Meng, Hsin-Fei

    2010-11-01

    This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

  4. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  5. Highly bendable characteristics of amorphous indium-gallium-zinc-oxide transistors embedded in a neutral plane

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, HyungIl; Yoo, Soon Sung; Park, Kwon-Shik

    2015-11-01

    The electromechanical response of an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

  6. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  7. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    NASA Astrophysics Data System (ADS)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  8. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  9. Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kwon, Sung-Nam; Na, Seok-In; Kim, Sun-Kyung; Yoo, Young-Zo; Im, Hyeong-Seop; Seong, Tae-Yeon

    2017-04-01

    Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm-3 and 7.96 × 1021 cm-3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

  10. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  11. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  12. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jaechul; Song, Ihun; Kim, Sunil; Kim, Sangwook; Kim, Changjung; Lee, Jaecheol; Lee, Hyungik; Lee, Eunha; Yin, Huaxiang; Kim, Kyoung-Kok; Kwon, Kee-Won; Park, Youngsoo

    2008-08-01

    We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/◻ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2.

  13. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Direct Transfer Printing

    NASA Astrophysics Data System (ADS)

    Adachi, Susumu; Okamura, Shoichi

    2010-10-01

    This letter describes the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) by direct transfer printing. An a-IGZO layer and a silicon dioxide (SiO2) layer were sequentially sputtered on a poly(dimethylsiloxane) (PDMS) stamp; the stamp was then pressed onto a glass substrate on which a gate metal had been previously deposited. Then, a-IGZO/SiO2 layers were successfully transferred by simply releasing the stamp from the substrate; a bottom-gate TFT was finally constructed. The measured current-voltage characteristics exhibited good field-effect mobility exceeding 10 cm2 V-1 s-1. The on/off current ratio and subthreshold slope were 4×105 and 0.86 V/decade, respectively.

  14. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  15. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  16. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc; McCall, Briana; Alston, Robert; Collis, Ward; Iyer, Shanthi

    2015-10-01

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of -3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V-1s-1, and sub-threshold swing of 0.38 V dec-1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures.

  17. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  18. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  19. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  20. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  1. Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

    NASA Astrophysics Data System (ADS)

    Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fangfang; Xu, Qingyu; Ou, Huiling; Zhang, Rong; Zheng, Youdou

    2012-06-01

    The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) are studied under monochromatic light illumination. It is found that as the wavelength of incident light reduces from 750 nm to 450 nm, the threshold voltage of the illuminated TFT shows a continuous negative shift, which is caused by photo-excitation of trapped electrons at the channel/dielectric interface. Meanwhile, an increase of the sub-threshold swing (SS) is observed when the illumination wavelength is below 625 nm (˜2.0 eV). The SS degradation is accompanied by a simultaneous increase of the field effect mobility (μFE) of the TFT, which then decreases at even shorter wavelength beyond 540 nm (˜2.3 eV). The variation of SS and μFE is explained by a physical model based on generation of singly ionized oxygen vacancies (Vo+) and double ionized oxygen vacancies (Vo2+) within the a-IGZO active layer by high energy photons, which would form trap states near the mid-gap and the conduction band edge, respectively.

  2. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    NASA Astrophysics Data System (ADS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm2 at a bias voltage of -2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 1012 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiOx as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  3. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  4. Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

    PubMed

    Agrawal, Ravi; Espinosa, Horacio D

    2011-02-09

    Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

  5. Gallium-doped zinc oxide plasmonic nanostructures for mid-IR applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dev, Sukrith U.; Look, David C.; Leedy, Kevin D.; Yu, Lan; Walker, Dennis E.; Wenner, Brett R.; Allen, Jeffery W.; Allen, Monica S.; Wasserman, Daniel M.

    2016-09-01

    The mid-infrared (mid-IR) region of the electromagnetic spectrum has a range of applications in defense, sensing, and free space optical communications. However, most mid-IR sources, particularly incoherent emitters, are practically limited as a result of significant non-radiative losses such as Auger and Shockley-Read-Hall recombination as well as phonon-assisted scattering. Recently, plasmonic materials have been a topic of interest due to their ability to overcome traditional limitations of light confinement as well as enhance light-matter interactions. For inherently inefficient sources, such as many mid-IR emitters, coupling of the emitting element to a plasmonic structure could enhance emission efficiency. In this work, we propose and experimentally evaluate the use of plasmon-mediated photoluminescence as a potential method for improving efficiency in mid-IR emitters. We assess the effectiveness of 3% gallium-doped zinc oxide (G3ZO) as a mid-IR plasmonic material. We design, simulate, fabricate, and characterize a two-dimensional periodic array of bow-tie nanoantennas (nantennas). Our structures are designed to enhance the overlap of the nantenna optical field with underlying In(Ga)Sb/InAs quantum well structures emitting at λ ≈ 4.0μm. Thin films of G3ZO are grown by pulsed laser deposition and are characterized electrically and optically, with the extracted material parameters used as inputs in our simulations. G3ZO plasmonic nantennas are then fabricated by electron-beam lithography and dry-etching. The spectral response of the patterned nantennas is characterized using Fourier transform infrared reflection spectroscopy. Samples are then characterized by temperature and polarization dependent photoluminescence spectroscopy in order to determine the extent to which the emission efficiency improves as a result of coupling to the nanostructures.

  6. Blade-coated sol-gel indium-gallium-zinc-oxide for inverted polymer solar cell

    NASA Astrophysics Data System (ADS)

    Lee, Yan-Huei; Tsai, Pei-Ting; Chang, Chia-Ju; Meng, Hsin-Fei; Horng, Sheng-Fu; Zan, Hsiao-Wen; Lin, Hung-Cheng; Liu, Hung-Chuan; Tseng, Mei-Rurng; Yeh, Han-Cheng

    2016-11-01

    The inverted organic solar cell was fabricated by using sol-gel indium-gallium-zinc-oxide (IGZO) as the electron-transport layer. The IGZO precursor solution was deposited by blade coating with simultaneous substrate heating at 120 °C from the bottom and hot wind from above. Uniform IGZO film of around 30 nm was formed after annealing at 400 °C. Using the blend of low band-gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-C-T) and [6,6]-Phenyl C71 butyric acid methyl ester ([70]PCBM) as the active layer for the inverted organic solar cell, an efficiency of 6.2% was achieved with a blade speed of 180 mm/s for the IGZO. The efficiency of the inverted organic solar cells was found to depend on the coating speed of the IGZO films, which was attributed to the change in the concentration of surface OH groups. Compared to organic solar cells of conventional structure using PBDTTT-C-T: [70]PCBM as active layer, the inverted organic solar cells showed significant improvement in thermal stability. In addition, the chemical composition, as well as the work function of the IGZO film at the surface and inside can be tuned by the blade speed, which may find applications in other areas like thin-film transistors.

  7. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  8. Fabrication Process Assessment and Negative Bias Illumination Stress Study of Indium-Gallium-Zinc Oxide and Zinc-Tin Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Hoshino, Ken

    Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O2 is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature.

  9. Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Li, Chang-Hung; Yeh, Chun-Cheng; Dai, Ming-Zhi; Meng, Hsin-Fei; Tsai, Chuang-Chuang

    2011-06-01

    An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology.

  10. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  11. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  12. High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

    NASA Astrophysics Data System (ADS)

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha; Kwon, Kee-Won; Park, Youngsoo

    2008-08-01

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si :H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37cm2/Vs, a threshold voltage of 0.1V, a subthreshold swing of 0.25V/decade, and an Ion/off ratio of 7.

  13. High-performance amorphous gallium indium zinc oxide thin-film transistors through N{sub 2}O plasma passivation

    SciTech Connect

    Park, Jaechul; Kim, Sangwook; Kim, Changjung; Kim, Sunil; Song, Ihun; Yin, Huaxiang; Kim, Kyoung-Kok; Lee, Sunghoon; Hong, Kiha; Park, Youngsoo; Lee, Jaecheol; Jung, Jaekwan; Lee, Eunha; Kwon, Kee-Won

    2008-08-04

    Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO{sub 2} passivation layer. To prevent such damages, N{sub 2}O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO{sub 2} deposition. N{sub 2}O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm{sup 2}/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I{sub on/off} ratio of 7.

  14. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.

    PubMed

    Wang, Jian-Xun; Hyung, Gun Woo; Li, Zhao-Hui; Son, Sung-Yong; Kwon, Sang Jik; Kim, Young Kwan; Cho, Eou Sik

    2012-07-01

    In this research, we reported on the fabrication of top-contact amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with an organic buffer layer between inorganic gate dielectric and active layer in order to improve the electrical properties of devices. By inserting an organic buffer layer, it was possible to make an affirmation of the improvements in the electrical characteristics of a-IGZO TFTs such as subthreshold slope (SS), on/off current ratio (I(ON/OFF)), off-state current, and saturation field-effect mobility (muFE). The a-IGZO TFTs with the cross-linked polyvinyl alcohol (c-PVA) buffer layer exhibited the pronounced improvements of the muFE (17.4 cm2/Vs), SS (0.9 V/decade), and I(ON/OFF) (8.9 x 10(6)).

  15. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  16. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  17. A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

    2016-12-01

    An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

  18. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  19. Sol-gel deposited gallium-doped zinc oxide electrode for polymer light-emitting diode applications

    NASA Astrophysics Data System (ADS)

    Kim, Donghyun; Ha, Jaeheung; Lee, Changhee; Hong, Yongtaek

    2012-09-01

    We have made a sol-gel deposited gallium-doped zinc oxide (GZO) film as a transparent conductive anode in polymer light-emitting diode (PLED) applications. The GZO films were obtained by spin-coating GZO precursor solutions followed by consecutive thermal annealing in the air and in the hydrogen-rich atmosphere. The resistance of GZO film was reduced to ~100 Ω/□ after thermal annealing in the hydrogen environment. Its surface roughness was sufficiently low (1.159 nm RMS) for depositing other polymer layers. We have fabricated PLEDs with quartz substrate / solution-processed GZO electrode (anode) / PEDOT:PSS (HITL) / SPG-01T (Green polymer light-emitting material purchased from Merck, EML) / Ca (EIL) / Al (Cathode). The fabricated devices showed current efficiency of 3.06 cd/A and power efficiency of 1.25 lm/W at luminance of 1000 cd/m2.

  20. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  1. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

  2. Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

    NASA Astrophysics Data System (ADS)

    Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

    2013-04-01

    It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

  3. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  4. The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Bradley, Tanina; Iyer, Shanthi; Alston, Robert; Collis, Ward; Lewis, Jay; Cunningham, Garry; Forsythe, Eric

    2013-03-01

    In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO2/Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (ID) of 10-6 A and on/off current ratio (Ion/off ) of 106 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔVT as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

  5. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  6. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  7. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  8. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  9. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  10. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    NASA Astrophysics Data System (ADS)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  11. Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

    NASA Astrophysics Data System (ADS)

    Lorenz, M.; Lajn, A.; Frenzel, H.; v. Wenckstern, H.; Grundmann, M.; Barquinha, P.; Martins, R.; Fortunato, E.

    2010-12-01

    We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 °C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm2/V s.

  12. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    PubMed

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  13. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride.

    PubMed

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  14. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    PubMed Central

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  15. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    NASA Astrophysics Data System (ADS)

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  16. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  17. Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

    NASA Astrophysics Data System (ADS)

    Zan, Hsiao-Wen; Chen, Wei-Tsung; Yeh, Chung-Cheng; Hsueh, Hsiu-Wen; Tsai, Chuang-Chuang; Meng, Hsin-Fei

    2011-04-01

    In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (ϕ) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (μ), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (Vth) from -5.0 to +7.9 V without an additional back gate power supply.

  18. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  19. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics

    NASA Astrophysics Data System (ADS)

    Suresh, Arun

    The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new class of inorganic thin-film transistor (TFT) channel material based on amorphous oxide semiconductors, that show high carrier mobility and high visual transparency, is being researched actively. The purpose of this dissertation is to develop amorphous oxide semiconductors by pulsed laser deposition, show their suitability for TFT applications and demonstrate other classes of devices such as non-volatile memory elements and integrated circuits such as ring oscillators and active matrix pixel elements. Indium gallium zinc oxide (IGZO) is discussed extensively in this dissertation. The influence of several deposition parameters is explored and oxygen partial pressure during deposition is found to have a profound effect on the electrical and optical characteristics of the IGZO films. By optimizing the deposition conditions, IGZO TFTs exhibit excellent electrical properties, even without any intentional annealing. This attribute along with the amorphous nature of the material also makes IGZO TFTs compatible with flexible substrates opening up various applications. IGZO TFTs with saturation field effect mobility of 12--16 cm 2 V-1 s-1 and subthreshold voltage swing of <200 mV decade-1 have been fabricated. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-state current ˜10 pA and a drain current on/off ratio of >1 x 108. Additionally, the effects of the oxygen partial pressure and the thickness of the semiconductor layer, the choice of the gate dielectric material and the device channel length on the electrical characteristics of the TFTs are explored. To evaluate IGZO TFT electrical stability, constant voltage bias stress measurements were carried out. The observed logarithmic

  20. Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

    NASA Astrophysics Data System (ADS)

    Wu, Chenfei; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2015-07-01

    In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 °C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface.

  1. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  2. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  3. Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time

    NASA Astrophysics Data System (ADS)

    Gwang Um, Jae; Mativenga, Mallory; Migliorato, Piero; Jang, Jin

    2012-09-01

    The evolution with time of interface trap density and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs), for negative-bias-under-illumination-stress (NBIS), is traced. Based on the combined analysis of TFT current-voltage and capacitance-voltage characteristics, position of Fermi energy, flat band voltage, interface trap density, and gap state density per unit energy are investigated as function of NBIS time and applied gate voltage. These key parameters help to identify the degradation phenomena responsible for the negative threshold voltage shift caused by NBIS. In particular, the interface trap density becomes more positive; from 0.03 × 1011/cm2 to 0.65 × 1011/cm2, while the gap trap density per unit energy also increases after NBIS, supporting defect creation in the bulk and build-up of positive charge at the gate insulator/active-layer interface as the mechanism responsible for NBIS instability.

  4. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Park, Jin-Seong; Kim, Tae-Woong; Stryakhilev, Denis; Lee, Jae-Sup; An, Sung-Guk; Pyo, Yong-Shin; Lee, Dong-Bum; Mo, Yeon Gon; Jin, Dong-Un; Chung, Ho Kyoon

    2009-07-01

    We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R =3 mm under tension and compression without any performance degradation.

  5. Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

    NASA Astrophysics Data System (ADS)

    Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

    2012-05-01

    The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm2/Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

  6. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  7. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    NASA Astrophysics Data System (ADS)

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-01

    In this study, the Al2O3 nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm2/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  8. Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

    NASA Astrophysics Data System (ADS)

    Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

    2014-11-01

    We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

  9. The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

    2014-09-01

    We investigated the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) using zinc-tin-oxide (ZTO) as the etch-stopper layer, the so-called dual-active-layered ZTO/IGZO TFT (DALZI TFT). The DALZI TFT can use a low-cost back-channel-etch structure because of the high chemical stability of the upper ZTO layer. The DALZI TFT exhibited only a threshold voltage shift of -1.86 V under negative bias illumination stress (NBIS) conditions (stress time = 1000 s), while the unpassivated IGZO TFT suffered from a threshold voltage shift of -19.59 V under NBIS conditions (stress time = 1000 s). The superior bias stress stability of the DALZI TFT is attributed not only to the densification effect by the multi-stacking process but also to the lower sensitivity to ambient gases (e.g., oxygen and water vapour) due to the low oxygen vacancy in the upper ZTO layer.

  10. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    NASA Astrophysics Data System (ADS)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  11. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    SciTech Connect

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  12. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  13. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo; Ohashi, Naoki

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  14. Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

    SciTech Connect

    Coleman, J.P.; Monzyk, B.F.

    1988-07-26

    The method of dissociating gallium arsenide into a gallium-containing component and an arsenic-containing component, is described which comprises contacting the gallium arsenide with an oxidizing agent and a liquid comprising hydroxamic acid to convert the gallium to a gallium-hydroxamic acid complex and to oxidize the arsenic to a positive valence state.

  15. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    NASA Astrophysics Data System (ADS)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  16. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  17. Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Sameshima, Toshiyuki; Nimura, Takeshi; Sugawara, Takashi; Ogawa, Yoshihiro; Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko

    2017-01-01

    Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.

  18. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  19. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    NASA Astrophysics Data System (ADS)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  20. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    PubMed Central

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  1. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  2. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  3. Thermodynamic properties of lanthanum in gallium-zinc alloys

    NASA Astrophysics Data System (ADS)

    Dedyukhin, A. S.; Shepin, I. E.; Kharina, E. A.; Shchetinskiy, A. V.; Volkovich, V. A.; Yamshchikov, L. F.

    2016-09-01

    Thermodynamic properties of lanthanum were determined in gallium-zinc alloys of the eutectic and over-eutectic compositions. The electromotive force measurements were used to determine thermodynamic activity and sedimentation technique to measure solubility of lanthanum in liquid metal alloys. Temperature dependencies of lanthanum activity, solubility and activity coefficients in alloys with Ga-Zn mixtures containing 3.64, 15 and 50 wt. % zinc were obtained.

  4. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    NASA Astrophysics Data System (ADS)

    Flewitt, A. J.; Powell, M. J.

    2014-04-01

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 106-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions

  5. Zinc oxide overdose

    MedlinePlus

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  6. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    PubMed

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.

  7. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  8. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  9. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    SciTech Connect

    Pak, J.; Lin, W.; Wang, K.; Chinchore, A.; Shi, M.; Ingram, D. C.; Smith, A. R.; Sun, K.; Lucy, J. M.; Hauser, A. J.; Yang, F. Y.

    2010-07-15

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  10. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  11. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  12. Hydrogen chemisorption on gallium oxide polymorphs.

    PubMed

    Collins, Sebastián E; Baltanás, Miguel A; Bonivardi, Adrian L

    2005-02-01

    The chemisorption of H(2) over a set of gallia polymorphs (alpha-, beta-, and gamma-Ga(2)O(3)) has been studied by temperature-programmed adsorption equilibrium and desorption (TPA and TPD, respectively) experiments, using in situ transmission infrared spectroscopy. Upon heating the gallium oxides above 500 K in 101.3 kPa of H(2), two overlapped infrared signals developed. The 2003- and 1980-cm(-1) bands were assigned to the stretching frequencies of H bonded to coordinatively unsaturated (cus) gallium cations in tetrahedral and octahedral positions [nu(Ga(t)-H) and nu(Ga(o)-H), respectively]. Irrespective to the gallium cation geometrical environment, (i) a linear relationship between the integrated intensity of the whole nu(Ga-H) infrared band versus the Brunauer-Emmett-Teller surface area of the gallia was found and (ii) TPA and TPD results revealed that molecular hydrogen is dissociatively chemisorbed on any bulk gallium oxide polymorph following two reaction pathways. An endothermal, homolytic dissociation occurs over surface cus-gallium sites at T > 450 K, giving rise to Ga-H(I) bonds. The heat and entropy of this type I hydrogen adsorption were determined by the Langmuir's adsorption model as Deltah(I) = 155 +/- 25 kJ mol(-1) and Deltas(I) = 0.27 +/- 0.11 kJ mol(-1) K(-1). In addition, another exothermic, heterolytic adsorption sets in already in the low-temperature region. This type of hydrogen chemisorption involves surface Ga-O-Ga species, originating GaO-H and Ga-H(II) bonds which can only be removed from the gallia surface after heating under evacuation at T > 650 K. The measured desorption energy of this last, second-order process was equal to 77 +/- 10 kJ mol(-1). The potential of the H(2) chemisorption as a tool to measure or estimate the specific surface area of gallia and to discern the nature and proportion of gallium cation coordination sites on the surface of bulk gallium oxides is also analyzed.

  13. A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1‑ x O2 Gate dielectric and improved electrical and hysteresis performance

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

    2017-04-01

    The use of co-sputtered zirconium silicon oxide (Zr x Si1‑ x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0–150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1‑ x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V‑1 s‑1).

  14. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  15. Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Jeon, Hoonha; Verma, Ved Prakash; Hwang, Sookhyun; Lee, Sooyeon; Park, Chiyoung; Kim, Do-Hyun; Choi, Wonbong; Jeon, Minhyon

    2008-01-01

    In this paper, we present bottom-gate-type Ga-doped zinc oxide (GZO) thin-film transistors (TFTs) using a certain conventional SiO2 gate insulator by applying a radio-frequency (RF) magnetron sputtering method at room temperature. A low gate leakage current was achieved using this conventional SiO2 gate insulator instead of new gate oxide materials. The root mean square (RMS) value of the GZO film surface was found to be 1.65 nm, and the transmittance was higher than 75% in the visible region. The GZO TFTs operated in a depletion mode with a threshold voltage of -3.4 V. A mobility of 0.023 cm2/(V·s), an on/off ratio of 2×103, and a gate voltage swing of 3.3 V/decade were obtained. We successfully demonstrated that the TFT of depletion-mode type can be fabricated using a GZO film that has good surface uniformity, transparency, and electrical characteristics.

  16. Doped zinc oxide microspheres

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  17. Doped zinc oxide microspheres

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  18. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGES

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  19. The impact of gallium content on degradation, bioactivity, and antibacterial potency of zinc borate bioactive glass.

    PubMed

    Rahimnejad Yazdi, Alireza; Torkan, Lawrence; Stone, Wendy; Towler, Mark R

    2017-02-02

    Zinc borate glasses with increasing gallium content (0, 2.5, 5, 10, and 15 Wt % Ga) were synthesized and their degradation, bioactivity in simulated body fluid (SBF), and antibacterial properties were investigated. ICP measurements showed that increased gallium content in the glass resulted in increased gallium ion release and decreased release of other ions. Degradability declined with the addition of gallium, indicating the formation of more symmetric BO3 units with three bridging oxygens and asymmetric BO3 units with two bridging oxygens in the glass network as the gallium content in the series increased. The formation of amorphous CaP on the glass surface after 24 h of incubation in SBF was confirmed by SEM, XRD, and FTIR analyses. Finally, antibacterial evaluation of the glasses using the agar disc-diffusion method demonstrated that the addition of gallium increased the antibacterial potency of the glasses against P. aeruginosa (Gram-negative) while decreasing it against S. epidermidis (Gram-positive); considering the ion release trends, this indicates that the gallium ion is responsible for the glasses' antibacterial behavior against P. aeruginosa while the zinc ion controls the antibacterial activity against S. epidermidis. The statistical significance of the observed trends in the measurements were confirmed by applying the Kruskal-Wallis H Test. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2017.

  20. Arsenic doped zinc oxide

    SciTech Connect

    Volbers, N.; Lautenschlaeger, S.; Leichtweiss, T.; Laufer, A.; Graubner, S.; Meyer, B. K.; Potzger, K.; Zhou Shengqiang

    2008-06-15

    As-doping of zinc oxide has been approached by ion implantation and chemical vapor deposition. The effect of thermal annealing on the implanted samples has been investigated by using secondary ion mass spectrometry and Rutherford backscattering/channeling geometry. The crystal damage, the distribution of the arsenic, the diffusion of impurities, and the formation of secondary phases is discussed. For the thin films grown by vapor deposition, the composition has been determined with regard to the growth parameters. The bonding state of arsenic was investigated for both series of samples using x-ray photoelectron spectroscopy.

  1. Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces

    SciTech Connect

    Franciosi, A.

    1989-02-21

    A method is described for promoting oxidation of a silicon or gallium arsenide surface comprising: depositing a ytterbium overlayer on the silicon or gallium arsenide surface prior to the oxidation of the surface.

  2. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  3. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid

  4. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  5. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  6. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  7. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  8. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  9. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  10. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  11. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of...

  12. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  13. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  14. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  15. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  16. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  17. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  18. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  19. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  20. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  1. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  2. Simultaneous determination of gallium and zinc in biological samples, wine, drinking water, and wastewater by derivative synchronous fluorescence spectrometry

    SciTech Connect

    Pozo, M.E.U.; de Torres, A.G.; Pavon, J.M.C.

    1987-04-15

    A simple, rapid, sensitive, and selective method for the simultaneous determination of gallium and zinc using derivative synchronous fluorescence spectrometry has been studied. This determination is based upon the formation of fluorescent complexes with salicylaldehyde thiocarbohydrazone (SATCH). The reaction is carried out at pH 4.7 in aqueous-ethanol medium (52% (v/v) ethanol). The use of second-derivative synchronous fluorescence spectrometry permits the simultaneous determination of gallium and zinc in the concentration intervals of 2-40 and 20-1500 ng/mL, respectively. The effect of interferences was studied. The method has been applied to the determination of gallium and zinc in biological samples (after destruction of the organic matter by using a HNO/sub 3/-H/sub 2/O/sub 2/ mixture), wine, drinking water, and wastewater.

  3. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... amounts consistent with good manufacturing practice. (d) Labeling. The color additive and any mixtues... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc...). It is principally composed of Zn. (2) Color additive mixtures for drug use made with zinc oxide...

  4. Bidirectional reflectance of zinc oxide

    NASA Technical Reports Server (NTRS)

    Scott, R.

    1973-01-01

    This investigation was undertaken to determine original and useful information about the bidirection reflectance of zinc oxide. The bidirectional reflectance will be studied for the spectra between .25-2.5 microns and the hemisphere above the specimen. The following factors will be considered: (1) surface conditions; (2) specimen preparation; (3) specimen substrate, (4) polarization; (5) depolarization; (6) wavelength; and (7) angles of incident and reflection. The bidirectional reflectance will be checked by experimentally determined angular hemispherical measurements or hemispherical measurements will be used to obtain absolute bidirectional reflectance.

  5. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  6. Directed spatial organization of zinc oxide nanostructures

    DOEpatents

    Hsu, Julia; Liu, Jun

    2009-02-17

    A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

  7. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a)...

  8. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a)...

  9. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a)...

  10. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a)...

  11. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  12. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  13. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  14. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    PubMed

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  15. Formation of self-organized nanoporous anodic oxide from metallic gallium.

    PubMed

    Pandey, Bipin; Thapa, Prem S; Higgins, Daniel A; Ito, Takashi

    2012-09-25

    This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide monoliths within confined spaces like the inside of a microchannel. Here, solid gallium films prepared on planar substrates were employed to investigate the effects of anodization voltage (1, 5, 10, 15 V) and H(2)SO(4) concentration (1, 2, 4, 6 M) on anodic oxide morphology. Self-organized nanopores aligned perpendicular to the film surface were obtained upon anodization of gallium films in ice-cooled 4 and 6 M aqueous H(2)SO(4) at 10 and 15 V. Nanopore formation could be recognized by an increase in anodic current after a current decrease reflecting barrier oxide formation. The average pore diameter was in the range of 18-40 nm with a narrow diameter distribution (relative standard deviation ca. 10-20%), and was larger at lower H(2)SO(4) concentration and higher applied voltage. The maximum thickness of nanoporous anodic oxide was ca. 2 μm. In addition, anodic formation of self-organized nanopores was demonstrated for a solid gallium monolith incorporated at the end of a glass capillary. Nanoporous anodic oxide monoliths formed from a fusible metal will lead to future development of unique devices for chemical sensing and catalysis.

  16. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    SciTech Connect

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A.

    2012-09-15

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  17. Plasma-Sprayed Photocatalytic Zinc Oxide Coatings

    NASA Astrophysics Data System (ADS)

    Navidpour, A. H.; Kalantari, Y.; Salehi, M.; Salimijazi, H. R.; Amirnasr, M.; Rismanchian, M.; Azarpour Siahkali, M.

    2017-03-01

    Fabrication of semiconductor coatings with photocatalytic action for photodegradation of organic pollutants is highly desirable. In this research, pure zinc oxide, which is well known for its promising photocatalytic activity, was deposited on stainless-steel plates by plasma spraying. The phase composition and microstructure of the deposited films were studied by x-ray diffraction analysis and scanning electron microscopy, respectively. Despite the low-energy conditions of the plasma spraying process, the zinc oxide coatings showed good mechanical integrity on the substrate. Their photocatalytic activity was evaluated using aqueous solution of methylene blue at concentration of 5 mg L-1. The results showed the potential of the plasma spraying technique to deposit zinc oxide coatings with photocatalytic action under ultraviolet illumination. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy confirmed that the plasma spraying method could deposit zinc oxide films with higher photoabsorption ability relative to the initial powder.

  18. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  19. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  20. Strategies for gallium removal after focused ion beam patterning of ferroelectric oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Schilling, A.; Adams, T.; Bowman, R. M.; Gregg, J. M.

    2007-01-01

    As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is associated with the formation of gallium-rich platelets on the surface of the annealed material. These platelets are thought to be gallium oxide. Etching using nitric and hydrochloric acids had no effect on the gallium-rich platelets. Effective platelet removal involved thermal annealing at 700 °C for 1 h in a vacuum followed by 1 h in oxygen, and then a post-annealing low-power plasma clean in an Ar/O atmosphere. Similar processing is likely to be necessary for the full recovery of post FIB-milled nanostructures in oxide ceramic systems in general.

  1. A Gallium Oxide-Graphene Oxide Hybrid Composite for Enhanced Photocatalytic Reaction

    PubMed Central

    Kim, Seungdu; Han, Kook In; Lee, In Gyu; Park, Won Kyu; Yoon, Yeojoon; Yoo, Chan Sei; Yang, Woo Seok; Hwang, Wan Sik

    2016-01-01

    Hybrid composites (HCs) made up of gallium oxide (GaO) and graphene oxide (GO) were investigated with the intent of enhancing a photocatalytic reaction under ultraviolet (UV) radiation. The material properties of both GaO and GO were preserved, even after the formation of the HCs. The incorporation of the GO into the GaO significantly enhanced the photocatalytic reaction, as indicated by the amount of methylene blue (MB) degradation. The improvements in the reaction were discussed in terms of increased surface area and the retarded recombination of generated charged carriers. PMID:28335255

  2. Patterned Fabrication of Zinc Oxide Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Khan, Sahar; Lamson, Thomas; Xu, Huizhong

    Zinc oxide nanowires possess desirable mechanical, thermodynamic, electrical, and optical properties. Although the hydrothermal growth process can be applied in tolerable growth conditions, the dimension and density of nanowires has a complex dependence on substrate pre-treatment, precursor concentrations, and growth conditions. Precise control of the geometry and density of nanowires as well as the location of nanowires would allow for the fabrication of useful nanowaveguide devices. In this work, we used electron beam lithography to pattern hole arrays in a polymer layer on gold-coated glass substrates and synthesized zinc oxide nanowires inside these holes. Arrays of nanowires with diameters ranging from 50 nm to 140 nm and various spacings were obtained. The transmission of light through these zinc oxide nanowire arrays in a silver film was also studied. This research was supported by the Seed Grant Program of St. John's University and the National Science Foundation under Grant No. CBET-0953645.

  3. Zinc oxide interdigitated electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Sin L., L.; Arshad, M. K. Md.; Fathil, M. F. M.; Adzhri, R.; M. Nuzaihan M., N.; Ruslinda, A. R.; Gopinath, Subash C. B.; Hashim, U.

    2016-07-01

    In biosensors, zinc oxide (ZnO) thin film plays a crucial role in term of stability, sensitivity, biocompatibility and low cost. Interdigitated electrode (IDE) design is one of the device architecture in biosensor for label free, stability and sensitivity. In this paper, we discuss the fabrication of zinc oxide deposited on the IDE as a transducer for sensing of biomolecule. The formation of APTES had increase the performance of the surface functionalization..Furthermore we extend the discuss on the surface functionalization process which is utilized for probe attachment onto the surface of biosensor through surface immobilization process, thus enables the sensing of biomolecules for biosensor application.

  4. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  5. GALLIUM ARSENIDE DENDRITE SINGLE CRYSTAL PROGRAM

    DTIC Science & Technology

    ARSENIDES, *GALLIUM COMPOUNDS, *LABORATORY FURNACES, * SOLAR CELLS , CRUCIBLES, DESIGN, DIFFUSION, EXPLOSIONS, INTERMETALLIC COMPOUNDS, MATERIALS, PHOSPHORUS, SINGLE CRYSTALS, TEMPERATURE CONTROL, ZINC

  6. Low Temperature Flux Growth of 2H-SiC and Beta-Gallium Oxide

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Choa, Fow-Sen; Su, Ching-Hua; Arnold, Bradley; Kelly, Lisa

    2016-01-01

    We present brief overview of our study on the low temperature flux growth of two very important novel wide bandgap materials 2H-SiC and Beta-gallium oxide (Beta-Ga2O3). We have synthesized and grown 5 millimeter to 1 centimeter size single crystals of Beta-gallium oxide (Beta-Ga2O3). We used a flux and semi wet method to grow transparent good quality crystals. In the semi-wet method Ga2O3 was synthesized with starting gallium nitrate solution and urea as a nucleation agent. In the flux method we used tin and other metallic flux. This crystal was placed in an alumina crucible and temperature was raised above 1050 degrees Centigrade. After a time period of thirty hours, we observed prismatic and needle shaped crystals of gallium oxide. Scanning electron microscopic studies showed step growth morphology. Crystal was polished to measure the properties. Bandgap was measured 4.7electronvolts using the optical absorption curve. Another wide bandgap hexagonal 2H-SiC was grown by using Si-Al eutectic flux in the graphite crucible. We used slight AlN also as the impurity in the flux. The temperature was raised up to 1050 degrees Centigrade and slowly cooled to 850 degrees Centigrade. Preliminary characterization results of this material are also reported.

  7. A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

    NASA Technical Reports Server (NTRS)

    Kuhlman, G. J.

    1979-01-01

    The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

  8. Correlation of Zinc with Oxidative Stress Biomarkers

    PubMed Central

    Morales-Suárez-Varela, María; Llopis-González, Agustín; González-Albert, Verónica; López-Izquierdo, Raúl; González-Manzano, Isabel; Cháves, Javier; Huerta-Biosca, Vicente; Martin-Escudero, Juan C.

    2015-01-01

    Hypertension and smoking are related with oxidative stress (OS), which in turn reports on cellular aging. Zinc is an essential element involved in an individual’s physiology. The aim of this study was to evaluate the relation of zinc levels in serum and urine with OS and cellular aging and its effect on the development of hypertension. In a Spanish sample with 1500 individuals, subjects aged 20–59 years were selected, whose zinc intake levels fell within the recommended limits. These individuals were classified according to their smoking habits and hypertensive condition. A positive correlation was found (Pearson’s C = 0.639; p = 0.01) between Zn serum/urine quotient and oxidized glutathione levels (GSSG). Finally, risk of hypertension significantly increased when the GSSG levels exceeded the 75 percentile; OR = 2.80 (95%CI = 1.09–7.18) and AOR = 3.06 (95%CI = 0.96–9.71). Low zinc levels in serum were related with OS and cellular aging and were, in turn, to be a risk factor for hypertension.  PMID:25774936

  9. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  10. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C.

    2014-09-01

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

  11. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.

    PubMed

    Kerr, A J; Chagarov, E; Gu, S; Kaufman-Osborn, T; Madisetti, S; Wu, J; Asbeck, P M; Oktyabrsky, S; Kummel, A C

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

  12. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    SciTech Connect

    Lim, K.; Schelhas, L. T.; Siah, S. C.; Brandt, R. E.; Zakutayev, A.; Lany, S.; Gorman, B.; Sun, C. J.; Ginley, D.; Buonassisi, T.; Toney, M. F.

    2016-10-03

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.

  13. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    SciTech Connect

    Lim, K.; Schelhas, L. T.; Siah, S. C.; Brandt, R. E.; Zakutayev, A.; Lany, S.; Gorman, B.; Sun, C. J.; Ginley, D.; Buonassisi, T.; Toney, M. F.

    2016-10-03

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.

  14. Process for preparing zinc oxide-based sorbents

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2011-06-07

    The disclosure relates to zinc oxide-based sorbents, and processes for preparing and using them. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  15. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  16. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  17. A LABORATORY COMPARISON OF FOUR ZINC OXIDE-EUGENOL FORMULATIONS AS RESTORATIVE MATERIALS.

    DTIC Science & Technology

    The ability of four zinc oxide - eugenol formulations to serve as long-term intermediate restorative materials was investigated. They were: (a...zinc oxide - eugenol , (b) zinc oxide - eugenol + EBA (ethoxybenzoic acid), (c) reinforced zinc oxide - eugenol , and (d) a reinforced zinc oxide - eugenol

  18. Electron-nuclear double resonance studies of point defects in silver gallium selenide and zinc germanium phosphide

    NASA Astrophysics Data System (ADS)

    Stevens, Kevin Taylor

    Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) studies have been performed on two chalcopyrite crystals grown by the horizontal-gradient-freeze technique. An impurity defect has been characterized in silver gallium selenide (AgGaSe2) and has been identified as a Ni+ ion substituting for a Ag+ ion. This nickel defect exists in as-grown crystals in the paramagnetic state. A complete ENDOR angular dependence study provided spin-Hamiltonian parameters for the 61Ni isotope as well as the neighboring selenium ions (77Se) and gallium ions (69Ga and 71Ga). Optical absorption data taken at room temperature and low temperature showed a broad band peaking near 2.2 microns. The zero-phonon line position was determined from the low temperature data. The EPR and optical absorption data were consistent with each other, suggesting the absorption band was associated with Ni+ impurities. Two point defects have been identified and characterized in zinc germanium phosphide (ZnGeP 2). The first is a copper impurity, which substitutes for a zinc ion in the ZnGeP2 lattice. The copper impurity acts as a conventional acceptor and is not paramagnetic in the as-grown condition, i.e., the light-off condition. Upon illumination of the sample with 633-nm or 1064-nm light, the copper acceptor gives up an electron and becomes paramagnetic. The EPR spectrum consists of resolved hyperfine due to the copper nucleus (63Cu and 65Cu) as well as neighboring phosphorous nuclei ( 31P). The spin-Hamiltonian parameters have been determined from ENDOR measurements of the light-induced EPR spectrum. The second defect that has been studied in ZnGeP2 is the previously identified zinc vacancy (VZn). EPR and ENDOR studies have previously characterized the g values and primary hyperfine interactions associated with the VZn. Further ENDOR measurements have been made in order to identify hyperfine interactions with more distant phosphorous neighbors. The results led to spin

  19. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions

    NASA Astrophysics Data System (ADS)

    Burke, Benjamin P.; Baghdadi, Neazar; Kownacka, Alicja E.; Nigam, Shubhanchi; Clemente, Gonçalo S.; Al-Yassiry, Mustafa M.; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J.

    2015-09-01

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging.The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no

  20. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity.

  1. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  2. Recent developments in zinc oxide target chemistry

    SciTech Connect

    Heaton, R.C.; Taylor, W.A.; Phillips, D.R.; Jamriska, D.J. Sr.; Garcia, J.B.

    1994-04-01

    Zinc oxide targets irradiated with high energy protons at the Los Alamos Meson Physics Facility (LAMPF) contain a number of radioactive spallation products in quantities large enough to warrant recovery. This paper describes methods for recovering {sup 7}Be, {sup 46}Sc, and {sup 48}V from such targets and offers suggestions on possible ways to recover additional isotopes. The proposed methods are based on traditional precipitation and ion exchange techniques, are readily adaptable to hot cell use, and produce no hazardous waste components. The products are obtained in moderate to high yields and have excellent radiopurity.

  3. Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.

    PubMed

    Kim, Dae-Hee; Kim, Dae-Hyun; Kim, Yeong-Cheol

    2014-10-01

    The initial oxidation of a gallium arsenide (001)-β2(2 x 4) surface with an oxygen molecule was investigated using density functional theory. The oxygen molecule was adsorbed on the surface without any energy barrier. The dissociation of the oxygen molecule on the first arsenic layer had two dissociation paths; the inter-dimer and intra-dimer. The inter-dimer dissociation was the dominant dissociation path based on the energy barriers. The two dissociated oxygen atoms preferred breaking the arsenic-gallium back-bond to form arsenic-oxygen-gallium bonds. Our results are in good agreement with literature of the scanning tunneling microscope study.

  4. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts.

    PubMed

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-07-20

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation.

  5. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts

    PubMed Central

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  6. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  7. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.

    PubMed

    Carter, Dean E; Aposhian, H Vasken; Gandolfi, A Jay

    2003-12-15

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  8. Zinc.

    PubMed

    Barceloux, D G

    1999-01-01

    The use of zinc in metal alloys and medicinal lotions dates back before the time of Christ. Currently, most of the commercial production of zinc involves the galvanizing of iron and the manufacture of brass. Some studies support the use of zinc gluconate lozenges to treat the common cold, but there are insufficient data at this time to recommend the routine use of these lozenges. Zinc is an essential co-factor in a variety of cellular processes including DNA synthesis, behavioral responses, reproduction, bone formation, growth, and wound healing. Zinc is a relatively common metal with an average concentration of 50 mg/kg soil and a range of 10-300 mg/kg soil. Meat, seafood, dairy products, nuts, legumes, and whole grains contain relatively high concentrations of zinc. The mobility of zinc in anaerobic environments is poor and therefore severe zinc contamination occurs primarily near points sources of zinc release. The recommended daily allowance for adults is 15 mg zinc. The ingestion of 1-2 g zinc sulfate produces emesis. Zinc compounds can produce irritation and corrosion of the gastrointestinal tract, along with acute renal tubular necrosis and interstitial nephritis. Inhalation of high concentrations of zinc chloride from smoke bombs detonated in closed spaces may cause chemical pneumonitis and adult respiratory distress syndrome. In the occupational setting inhalation of fumes from zinc oxide is the most common cause of metal fume fever (fatigue, chills, fever, myalgias, cough, dyspnea, leukocytosis, thirst, metallic taste, salivation). Zinc compounds are not suspected carcinogens. Treatment of zinc toxicity is supportive. Calcium disodium ethylenediaminetetraacetate (CaNa2EDTA) is the chelator of choice based on case reports that demonstrate normalization of zinc concentrations, but there are few clinical data to confirm the efficacy of this agent.

  9. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  10. Relative Penetration of Zinc Oxide and Zinc Ions into Human Skin after Application of Different Zinc Oxide Formulations.

    PubMed

    Holmes, Amy M; Song, Zhen; Moghimi, Hamid R; Roberts, Michael S

    2016-02-23

    Zinc oxide (ZnO) is frequently used in commercial sunscreen formulations to deliver their broad range of UV protection properties. Concern has been raised about the extent to which these ZnO particles (both micronized and nanoparticulate) penetrate the skin and their resultant toxicity. This work has explored the human epidermal skin penetration of zinc oxide and its labile zinc ion dissolution product that may potentially be formed after application of ZnO nanoparticles to human epidermis. Three ZnO nanoparticle formulations were used: a suspension in the oil, capric caprylic triglycerides (CCT), the base formulation commonly used in commercially available sunscreen products; an aqueous ZnO suspension at pH 6, similar to the natural skin surface pH; and an aqueous ZnO suspension at pH 9, a pH at which ZnO is stable and there is minimal pH-induced impairment of epidermal integrity. In each case, the ZnO in the formulations did not penetrate into the intact viable epidermis for any of the formulations but was associated with an enhanced increase in zinc ion fluorescence signal in both the stratum corneum and the viable epidermis. The highest labile zinc fluorescence was found for the ZnO suspension at pH 6. It is concluded that, while topically applied ZnO does not penetrate into the viable epidermis, these applications are associated with hydrolysis of ZnO on the skin surface, leading to an increase in zinc ion levels in the stratum corneum, thence in the viable epidermis and subsequently in the systemic circulation and the urine.

  11. Antifouling properties of zinc oxide nanorod coatings.

    PubMed

    Al-Fori, Marwan; Dobretsov, Sergey; Myint, Myo Tay Zar; Dutta, Joydeep

    2014-01-01

    In laboratory experiments, the antifouling (AF) properties of zinc oxide (ZnO) nanorod coatings were investigated using the marine bacterium Acinetobacter sp. AZ4C, larvae of the bryozoan Bugula neritina and the microalga Tetraselmis sp. ZnO nanorod coatings were fabricated on microscope glass substrata by a simple hydrothermal technique using two different molar concentrations (5 and 10 mM) of zinc precursors. These coatings were tested for 5 h under artificial sunlight (1060 W m(-2) or 530 W m(-2)) and in the dark (no irradiation). In the presence of light, both the ZnO nanorod coatings significantly reduced the density of Acinetobacter sp. AZ4C and Tetraselmis sp. in comparison to the control (microscope glass substratum without a ZnO coating). High mortality and low settlement of B. neritina larvae was observed on ZnO nanorod coatings subjected to light irradiation. In darkness, neither mortality nor enhanced settlement of larvae was observed. Larvae of B. neritina were not affected by Zn(2+) ions. The AF effect of the ZnO nanorod coatings was thus attributed to the reactive oxygen species (ROS) produced by photocatalysis. It was concluded that ZnO nanorod coatings effectively prevented marine micro and macrofouling in static conditions.

  12. Electrical characterization of plasma-grown oxides on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

    1985-01-01

    Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

  13. Review of Zinc Oxide Thin Films

    DTIC Science & Technology

    2014-12-23

    Laboratory Air Force Materiel Command   a. REPORT U   b. ABSTRACT U   c. THIS PAGE U REPORT DOCUMENTATION PAGE Form ApprovedOMB No. 0704-0188 The public...PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1.  REPORT DATE (DD-MM-YYYY)      18-12-2014 2.  REPORT TYPE      Final Performance 3.  DATES...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 1    Review of Zinc Oxide Thin Films   Abstract  The present review paper reports on the

  14. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  15. Photocatalytic paper using zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M.; Dutta, Joydeep

    2010-10-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm-2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions.

  16. Photocatalytic paper using zinc oxide nanorods

    PubMed Central

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M; Dutta, Joydeep

    2010-01-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm–2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions. PMID:27877367

  17. Zinc

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc was recognized as an essential trace metal for humans during the studies of Iranian adolescent dwarfs in the early 1960s. Zinc metal existing as Zn2+ is a strong electron acceptor in biological systems without risks of oxidant damage to cells. Zn2+ functions in the structure of proteins and is ...

  18. Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

    ERIC Educational Resources Information Center

    Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

    2014-01-01

    In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

  19. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

    PubMed

    Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

    2013-01-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  20. Surface nature of nanoparticle zinc-titanium oxide aerogel catalysts

    NASA Astrophysics Data System (ADS)

    Wang, Chien-Tsung; Lin, Jen-Chieh

    2008-05-01

    Nanoparticle zinc-titanium oxide materials were prepared by the aerogel approach. Their structure, surface state and reactivity were investigated. Zinc titanate powders formed at higher zinc loadings possessed a higher surface area and smaller particle size. X-ray photoelectron spectroscopy (XPS) revealed a stronger electronic interaction between Zn and Ti atoms in the mixed oxide structure and showed the formation of oxygen vacancy due to zinc doping into titania or zinc titanate matrices. The 8-45 nm aerogel particles were evaluated as catalysts for methanol oxidation in an ambient flow reactor. Carbon dioxide was favorably produced on the oxides with anion defects. Titanium based oxides exhibited a high selectivity to dimethyl ether, so that a strong Lewis acidic character suggested for the catalysts was associated primarily with the Ti 4+ center. Both methanol conversion and dimethyl ether formation rates increased with increasing the zinc content added to the oxide support. Results demonstrate that cubic zinc titanate phases produce new Lewis acid sites having also a higher reactivity and that the nature of the catalytic surface transforms from Lewis acidic to basic characters due to the presence of reactive oxygen vacancies.

  1. Toxicokinetics of zinc oxide nanoparticles in rats

    NASA Astrophysics Data System (ADS)

    Chung, H. E.; Yu, J.; Baek, M.; Lee, J. A.; Kim, M. S.; Kim, S. H.; Maeng, E. H.; Lee, J. K.; Jeong, J.; Choi, S. J.

    2013-04-01

    Zinc oxide (ZnO) nanoparticle have been extensively applied to diverse industrial fields because they possess UV light absorption, catalytic, semi-conducting, and magnetic characteristics as well as antimicrobial property. However, up to date, toxicological effects of ZnO nanoparticles in animal models have not been completely determined. Moreover, little information is available about kinetic behaviors of ZnO nanoparticles in vivo, which will be crucial to predict their potential chronic toxicity after long-term exposure. The aim of this study was, therefore, to evaluate the pharmacokinetics and toxicokinetics of ZnO nanoparticles after single-dose and repeated dose 90-day oral administration in male and female rats, respectively. The blood samples were collected following administration of three different doses (125, 250, and 500 mg/kg) and ZnO concentration was assessed by measuring zinc level with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The result showed that the plasma ZnO concentration significantly increased in a dose-dependent manner, but decreased within 24 h after single-dose oral administration up to 500 mg/kg, without any significant difference between gender. However, when repeated dose 90-day oral toxicity study was performed, the elevated plasma concentrations did not return to normal control levels in all the cases, indicating their toxicity potential. These findings suggest that repeated oral exposure to ZnO nanoparticles up to the dose of 125 mg/kg could accumulate in the systemic circulation, thereby implying that the NOAEL values could be less than 125 mg/kg via oral intake.

  2. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

    SciTech Connect

    Zhang, Xueqiang; Lamere, Edward; Ptasinska, Sylwia; Liu, Xinyu; Furdyna, Jacek K.

    2014-05-05

    The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

  3. Bioavailability of Zinc in Wistar Rats Fed with Rice Fortified with Zinc Oxide

    PubMed Central

    Della Lucia, Ceres Mattos; Santos, Laura Luiza Menezes; Rodrigues, Kellen Cristina da Cruz; Rodrigues, Vivian Cristina da Cruz; Martino, Hércia Stampini Duarte; Pinheiro Sant’Ana, Helena Maria

    2014-01-01

    The study of zinc bioavailability in foods is important because this mineral intake does not meet the recommended doses for some population groups. Also, the presence of dietary factors that reduce zinc absorption contributes to its deficiency. Rice fortified with micronutrients (Ultra Rice®) is a viable alternative for fortification since this cereal is already inserted into the population habit. The aim of this study was to evaluate the bioavailability of zinc (Zn) in rice fortified with zinc oxide. During 42 days, rats were divided into four groups and fed with diets containing two different sources of Zn (test diet: UR® fortified with zinc oxide, or control diet: zinc carbonate (ZnCO3)), supplying 50% or 100%, respectively, of the recommendations of this mineral for animals. Weight gain, food intake, feed efficiency ratio, weight, thickness and length of femur; retention of zinc, calcium (Ca) and magnesium (Mg) in the femur and the concentrations of Zn in femur, plasma and erythrocytes were evaluated. Control diet showed higher weight gain, feed efficiency ratio, retention of Zn and Zn concentration in the femur (p < 0.05). However, no differences were observed (p > 0.05) for dietary intake, length and thickness of the femur, erythrocyte and plasmatic Zn between groups. Although rice fortified with zinc oxide showed a lower bioavailability compared to ZnCO3, this food can be a viable alternative to be used as a vehicle for fortification. PMID:24932657

  4. A review of zinc oxide mineral beneficiation using flotation method.

    PubMed

    Ejtemaei, Majid; Gharabaghi, Mahdi; Irannajad, Mehdi

    2014-04-01

    In recent years, extraction of zinc from low-grade mining tailings of oxidized zinc has been a matter of discussion. This is a material which can be processed by flotation and acid-leaching methods. Owing to the similarities in the physicochemical and surface chemistry of the constituent minerals, separation of zinc oxide minerals from their gangues by flotation is an extremely complex process. It appears that selective leaching is a promising method for the beneficiation of this type of ore. However, with the high consumption of leaching acid, the treatment of low-grade oxidized zinc ores by hydrometallurgical methods is expensive and complex. Hence, it is best to pre-concentrate low-grade oxidized zinc by flotation and then to employ hydrometallurgical methods. This paper presents a critical review on the zinc oxide mineral flotation technique. In this paper, the various flotation methods of zinc oxide minerals which have been proposed in the literature have been detailed with the aim of identifying the important factors involved in the flotation process. The various aspects of recovery of zinc from these minerals are also dealt with here. The literature indicates that the collector type, sulfidizing agent, pH regulator, depressants and dispersants types, temperature, solid pulp concentration, and desliming are important parameters in the process. The range and optimum values of these parameters, as also the adsorption mechanism, together with the resultant flotation of the zinc oxide minerals reported in the literature are summarized and highlighted in the paper. This review presents a comprehensive scientific guide to the effectiveness of flotation strategy.

  5. The kinetic of photoreactions in zinc oxide microrods

    NASA Astrophysics Data System (ADS)

    Fiedot, M.; Rac, O.; Suchorska-Woźniak, P.; Nawrot, W.; Teterycz, H.

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed.

  6. Zinc oxide nanoflowers make new blood vessels

    NASA Astrophysics Data System (ADS)

    Barui, Ayan Kumar; Veeriah, Vimal; Mukherjee, Sudip; Manna, Joydeb; Patel, Ajay Kumar; Patra, Sujata; Pal, Krishnendu; Murali, Shruthi; Rana, Rohit K.; Chatterjee, Suvro; Patra, Chitta Ranjan

    2012-11-01

    It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood vessels formation. Additionally, it helps to promote endothelial cell (EA.hy926 cells) migration in wound healing assays. Formation of reactive oxygen species (ROS), especially hydrogen peroxide (H2O2)--a redox signaling molecule, might be the plausible mechanism for nanoflower-based angiogenesis. Angiogenesis by nanoflowers may provide the basis for the future development of new alternative therapeutic treatment strategies for cardiovascular and ischemic diseases, where angiogenesis plays a significant role.It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood

  7. Acetone sensor based on zinc oxide hexagonal tubes

    SciTech Connect

    Hastir, Anita Singh, Onkar Anand, Kanika Singh, Ravi Chand

    2014-04-24

    In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.

  8. Nano zinc oxide-sodium alginate antibacterial cellulose fibres.

    PubMed

    Varaprasad, Kokkarachedu; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Seo, Jongchul

    2016-01-01

    In the present study, antibacterial cellulose fibres were successfully fabricated by a simple and cost-effective procedure by utilizing nano zinc oxide. The possible nano zinc oxide was successfully synthesized by precipitation technique and then impregnated effectively over cellulose fibres through sodium alginate matrix. XRD analysis revealed the 'rod-like' shape alignment of zinc oxide with an interplanar d-spacing of 0.246nm corresponding to the (101) planes of the hexagonal wurtzite structure. TEM analysis confirmed the nano dimension of the synthesized zinc oxide nanoparticles. The presence of nano zinc oxide over cellulose fibres was evident from the SEM-EDS experiments. FTIR and TGA studies exhibited their effective bonding interaction. The tensile stress-strain curves data indicated the feasibility of the fabricated fibres for longer duration utility without any significant damage or breakage. The antibacterial studies against Escherichia coli revealed the excellent bacterial devastation property. Further, it was observed that when all the parameters remained constant, the variation of sodium alginate concentration showed impact in devastating the E. coli. In overall, the fabricated nano zinc oxide-sodium alginate cellulose fibres can be effectively utilized as antibacterial fibres for biomedical applications.

  9. Electrochemical synthesis and characterization of zinc carbonate and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pourmortazavi, Seied Mahdi; Marashianpour, Zahra; Karimi, Meisam Sadeghpour; Mohammad-Zadeh, Mohammad

    2015-11-01

    Zinc oxide and its precursor i.e., zinc carbonate is widely utilized in various fields of industry, especially in solar energy conversion, optical, and inorganic pigments. In this work, a facile and clean electrodeposition method was utilized for the synthesis of zinc carbonate nanoparticles. Also, zinc oxide nanoparticles were produced by calcination of the prepared zinc carbonate powder. Zinc carbonate nanoparticles with different sizes were electrodeposited by electrolysis of a zinc plate as anode in the solution of sodium carbonate. It was found that the particle size of zinc carbonate might be tuned by process parameters, i.e., electrolysis voltage, carbonate ion concentration, solvent composition and stirring rate of the electrolyte solution. An orthogonal array design was utilized to identify the optimum experimental conditions. The experimental results showed that the minimum size of the electrodeposited ZnCO3 particles is about 24 nm whereas the maximum particle size is around 40 nm. The TG-DSC studies of the nanoparticles indicated that the main thermal degradation of ZnCO3 occurs in two steps over the temperature ranges of 150-250 and 350-400 °C. The electrosynthesized ZnCO3 nanoparticles were calcined at the temperature of 600 °C to prepare ZnO nanoparticles. The prepared ZnCO3 and ZnO nanoparticles were characterized by SEM, X-ray diffraction (XRD), and FT-IR techniques.

  10. Biomedical Applications of Zinc Oxide Nanomaterials

    PubMed Central

    Zhang, Yin; Nayak, Tapas R.; Hong, Hao; Cai, Weibo

    2013-01-01

    Nanotechnology has witnessed tremendous advancement over the last several decades. Zinc oxide (ZnO), which can exhibit a wide variety of nanostructures, possesses unique semiconducting, optical, and piezoelectric properties hence has been investigated for a wide variety of applications. One of the most important features of ZnO nanomaterials is low toxicity and biodegradability. Zn2+ is an indispensable trace element for adults (~10 mg of Zn2+ per day is recommended) and it is involved in various aspects of metabolism. Chemically, the surface of ZnO is rich in -OH groups, which can be readily functionalized by various surface decorating molecules. In this review article, we summarized the current status of the use of ZnO nanomaterials for biomedical applications, such as biomedical imaging (which includes fluorescence, magnetic resonance, positron emission tomography, as well as dual-modality imaging), drug delivery, gene delivery, and biosensing of a wide array of molecules of interest. Research in biomedical applications of ZnO nanomaterials will continue to flourish over the next decade, and much research effort will be needed to develop biocompatible/biodegradable ZnO nanoplatforms for potential clinical translation. PMID:24206130

  11. [Zinc oxide-eugenol as dental material (1)].

    PubMed

    Brauer, G M

    1976-11-01

    Zinc oxide-eugenol cements are considerably better tolerated by tissue than other dental materials. As they alleviate pain and are bacteriostatic and antiseptic, they are well tolerated by patients. The cements are good insulators and possess better sealing properties than zinc phosphate cements. Because of their poor mechanic properties, the conventional zinc oxide-eugenol cements are mainly used as temporary fixing contents and filling materials, for gingival dressings and together with filling materials as impression materials. Recently, reinforced zinc oxide-eugenol cements and cements containing ethoxy benzoic acid (EBA) have been developed. These new cements have considerably better mechanic properties and are therefore used for cement bases, indirect capping, long-term temporary fillings and in selected cases as definite fixing cements.

  12. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  13. Synthetic silver oxide and mercury-free zinc electrodes for silver-zinc reserve batteries

    NASA Astrophysics Data System (ADS)

    Smith, David F.; Gucinski, James A.

    Reserve activated silver oxide-zinc cells were constructed with synthetic silver oxide (Ag 2O) electrodes with Pb-treated zinc electrodes produced by a non-electrolytic process. The cells were tested before and after thermally accelerated aging. At discharge rates up to 80 mA cm -2, the discharge was limited by the Ag 2O electrode, with a coulombic efficiency between 89-99%. At higher rates, the cells are apparently zinc-limited. Test cells were artificially aged at 90°C for 19 h and discharged at 21°C at 80 mA cm -2. No capacity loss was measured, but a delayed activation rise time was noted (192 ms fresh vs. 567 ms aged). The delay is thought to be caused by zinc passivation due to the outgassing of cell materials.

  14. Thermodynamics and kinetics of extracting zinc from zinc oxide ore by the ammonium sulfate roasting method

    NASA Astrophysics Data System (ADS)

    Sun, Yi; Shen, Xiao-yi; Zhai, Yu-chun

    2015-05-01

    Thermodynamic analyses and kinetic studies were performed on zinc oxide ore treatment by (NH4)2SO4 roasting technology. The results show that it is theoretically feasible to realize a roasting reaction between the zinc oxide ore and (NH4)2SO4 in a temperature range of 573-723 K. The effects of reaction temperature and particle size on the extraction rate of zinc were also examined. It is found that a surface chemical reaction is the rate-controlling step in roasting kinetics. The calculated activation energy of this process is about 45.57 kJ/mol, and the kinetic model can be expressed as follows: 1 - (1 - α)1/3 = 30.85 exp(-45.57/ RT)· t. An extraction ratio of zinc as high as 92% could be achieved under the optimum conditions.

  15. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  16. Niobium-gallium oxide with a high concentration of Cr3+ ions: Photoluminescence and structural characteristics

    NASA Astrophysics Data System (ADS)

    Costa, G. K. B.; Pedro, S. S.; López, A.; Carvalho, I. C. S.; Cella, N.; Sosman, L. P.

    2016-10-01

    This work presents photoluminescence data for gallium-niobium oxide with chromium ion as an impurity. The samples were obtained by the solid-state method (SSM) and the wet-chemical method (WCM) and investigated by X-ray diffraction, photoluminescence, excitation, and photoacoustic and X-ray fluorescence. The color of the sample obtained by the SSM was pink, while the color of the sample prepared by the WCM was green. This dramatic difference was associated with Cr3+ concentration and with the neighborhood of the doping ions, obtained from crystallographic data, which is strongly dependent on the preparation method. The difference between the samples was also verified in the photoacoustic and excitation spectra, in which the energy bands were located at different energy levels; on the other hand, in the photoluminescence spectra, no band shift was observed. All spectra were assigned to chromium ions at nonequivalent octahedral sites.

  17. Growth and electrical properties of zinc oxide nanowires.

    PubMed

    Zhang, Zengxing; Zhao, Yuanchun; Sun, Lianfeng; Liu, Dongfang; Shen, Jun; Zhou, Weiya; Luo, Qiang; Jin, Aizi; Yang, Haifang; Gu, Changzhi; Xie, Sishen

    2009-02-01

    Zinc oxide nanowires were grown on molybdenum grids with a simple chemical vapor transport and deposition method through thermal evaporation of zinc powder at a temperature of 600 degrees C. These nanowires are 20-50 nm in diameter and over ten microns in length. High resolution transmission electron microscopy studies show that the as-grown nanowires are single crystal of wurtzite structure and grow along the (0001) direction. The growth process was explained with a vapor-solid mechanism under zinc-rich conditions. We further patterned electrodes on individual ZnO nanowires by e-beam lithography and studied thier electrical properties.

  18. Defects and ferromagnetism in transition metal doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Thapa, Sunil

    Transition metal doped zinc oxide has been studied recently due to its potential application in spintronic devices. The magnetic semiconductor, often called Diluted Magnetic Semiconductors (DMS), has the ability to incorporate both charge and spin into a single formalism. Despite a large number of studies on ferromagnetism in ZnO based DMS and the realization of its room temperature ferromagnetism, there is still a debate about the origin of the ferromagnetism. In this work, the synthesis and characterization of transition metal doped zinc oxide have been carried out. The sol-gel method was used to synthesize thin films, and they were subsequently annealed in air. Characterization of doped zinc oxide films was carried out using the UV-visible range spectrometer, scanning electron microscopy, superconducting quantum interference device (SQUID), x-ray diffraction(XRD) and positron annihilation spectroscopy. Hysteresis loops were obtained for copper and manganese doped zinc oxide, but a reversed hysteresis loop was observed for 2% Al 3% Co doped zinc oxide. The reversed hysteresis loop has been explained using a two-layer model.

  19. Plasma in-liquid method for reduction of zinc oxide in zinc nanoparticle synthesis

    NASA Astrophysics Data System (ADS)

    Amaliyah, Novriany; Mukasa, Shinobu; Nomura, Shinfuku; Toyota, Hiromichi; Kitamae, Tomohide

    2015-02-01

    Metal air-batteries with high-energy density are expected to be increasingly applied in electric vehicles. This will require a method of recycling air batteries, and reduction of metal oxide by generating plasma in liquid has been proposed as a possible method. Microwave-induced plasma is generated in ethanol as a reducing agent in which zinc oxide is dispersed. Analysis by energy-dispersive x-ray spectrometry (EDS) and x-ray diffraction (XRD) reveals the reduction of zinc oxide. According to images by transmission electron microscopy (TEM), cubic and hexagonal metallic zinc particles are formed in sizes of 30 to 200 nm. Additionally, spherical fiber flocculates approximately 180 nm in diameter are present.

  20. Fundamentals of zinc oxide as a semiconductor

    NASA Astrophysics Data System (ADS)

    Janotti, Anderson; Van de Walle, Chris G.

    2009-12-01

    In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes

  1. Crystalline state and acoustic properties of zinc oxide films

    SciTech Connect

    Kal'naya, G.I.; Pryadko, I.F.; Yarovoi, Yu.A.

    1988-08-01

    We study the effect of the crystalline state of zinc oxide films, prepared by magnetron sputtering, on the efficiency of SAW transducers based on the layered system textured ZnO film-interdigital transducer (IDT)-fused quartz substrate. The crystalline perfection of the ZnO films was studied by the x-ray method using a DRON-2.0 diffractometer. The acoustic properties of the layered system fused quartz substrate-IDT-zinc oxide film were evaluated based on the squared electromechanical coupling constant K/sup 2/ for strip filters. It was found that K/sup 2/ depends on the magnitude of the mechanical stresses. When zinc oxide films are deposited by the method of magnetron deposition on fused quartz substrates, depending on the process conditions limitations can arise on the rate of deposition owing to mechanical stresses, which significantly degrade the efficiency of SAW transducers based on them, in the ZnO films.

  2. Zinc Oxide Nanoparticles for Revolutionizing Agriculture: Synthesis and Applications

    PubMed Central

    Sabir, Sidra; Arshad, Muhammad

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  3. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-10-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2-4 nm) nanoparticles.

  4. Gallium scan

    MedlinePlus

    ... material called gallium and is a type of nuclear medicine exam. A related test is gallium scan ... Brown ML, Forstrom LA, et al. Society of nuclear medicine procedure guideline for gallium scintigraphy in inflammation. ...

  5. Combined administration of oxalic acid, succimer and its analogue for the reversal of gallium arsenide-induced oxidative stress in rats.

    PubMed

    Flora, Swaran J S; Kannan, Gurusamy M; Pant, Bhagwat P; Jaiswal, Devendra K

    2002-06-01

    Gallium arsenide (GaAs), a group III-VA intermetallic semiconductor, possesses superior electronic and optical properties and has a wide application in the electronics industry. Exposure to GaAs in the semiconductor industry is a potential occupational hazard because cleaning and slicing GaAs ingots to yield the desired wafer could generate GaAs particles. The ability of GaAs to induce oxidative stress has not yet been reported. The present study reports the role of oxidative stress in GaAs-induced haematological and liver disorders and its possible reversal overturn by administration of meso-2,3-dimercaptosuccinic acid (DMSA) and one of its analogue, monoisoamyl DMSA (MiADMSA), either individually or in combination with oxalic acid. While DMSA and MiADMSA are potential arsenic chelators, oxalic acid is reported to be an effective gallium chelator. Male rats were exposed to 10 mg/kg GaAs orally, 5 days a week for 8 weeks. GaAs exposure was then stopped and rats were given a 0.5 mmol/kg dose of succimers (DMSA or MiADMSA), oxalic acid or a combination of the two, intraperitoneally once daily for 5 consecutive days. We found a significant fall in blood delta-aminolevulinic acid dehydratase (ALAD) activity and blood glutathione (GSH) level, and an increased urinary excretion of delta-aminolevulinic acid (ALA) and an increased malondialdehyde (MDA) level in erythrocytes of rats exposed to GaAs. Hepatic GSH levels decreased, whereas there was an increase in GSSG and MDA levels. The results suggest a role of oxidative stress in GaAs-induced haematological and hepatic damage. Administration of DMSA and MiADMSA produced effective recovery in most of the above variables. However, a greater effectiveness of the chelation treatment (i.e. removal of both gallium and arsenic from body organs) could be achieved by combined administration of succimer (DMSA) with oxalic acid since, after MiADMSA administration, a marked loss of essential metals (copper and zinc) is of concern.

  6. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach

    NASA Astrophysics Data System (ADS)

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; van Dorsselaer, Alain; Rabilloud, Thierry

    2014-05-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations.Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate

  7. Hydrogen Reduction of Zinc and Iron Oxides Containing Mixtures

    NASA Astrophysics Data System (ADS)

    de Siqueira, Rogério Navarro C.; de Albuquerque Brocchi, Eduardo; de Oliveira, Pamela Fernandes; Motta, Marcelo Senna

    2013-10-01

    Zinc is a metal of significant technological importance and its production from secondary sources has motivated the development of alternative processes, such as the chemical treatment of electrical arc furnace (EAF) dust. Currently, the extraction of zinc from the mentioned residue using a carbon-containing reducing agent is in the process of being established commercially and technically. In the current study, the possibility of reducing zinc from an EAF dust sample through a H2 constant flux in a horizontal oven is studied. The reduction of a synthetic oxide mixture of analogous composition is also investigated. The results indicated that the reduction process is thermodynamically viable for temperatures higher than 1123 K (850 °C), and all zinc metal produced is transferred to the gas stream, enabling its complete separation from iron. The same reaction in the presence of zinc crystals was considered for synthesizing FeZn alloys. However, for the experimental conditions employed, although ZnO reduction was indeed thermodynamically hindered because of the presence of zinc crystals (the metal's partial pressure was enhanced), the zinc metal's escape within the gaseous phase could not be effectively avoided.

  8. High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer.

    PubMed

    Lee, Ming-Lun; Mue, T S; Huang, F W; Yang, J H; Sheu, J K

    2011-06-20

    In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

  9. Effect of modifying agents on the hydrophobicity and yield of zinc borate synthesized by zinc oxide

    NASA Astrophysics Data System (ADS)

    Acarali, Nil Baran; Bardakci, Melek; Tugrul, Nurcan; Derun, Emek Moroydor; Piskin, Sabriye

    2013-06-01

    The aim of this study was to synthesize zinc borate using zinc oxide, reference boric acid, and reference zinc borate (reference ZB) as the seed, and to investigate the effects of modifying agents and reaction parameters on the hydrophobicity and yield, respectively. The reaction parameters include reaction time (1-5 h), reactant ratio (H3BO3/ZnO by mass: 2-5), seed ratio (seed crystal/(H3BO3+ZnO) by mass: 0-2wt%), reaction temperature (50-120°C), cooling temperature (10-80°C), and stirring rate (400-700 r/min); the modifying agents involve propylene glycol (PG, 0-6wt%), kerosene (1wt%-6wt%), and oleic acid (OA, 1wt%-6wt%) with solvents (isopropyl alcohol (IPA), ethanol, and methanol). The results of reaction yield obtained from either magnetically or mechanically stirred systems were compared. Zinc borate produced was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and contact angle tests to identify the hydrophobicity. In conclusion, zinc borate is synthesized successfully under the optimized reaction conditions, and the different modifying agents with various solvents affect the hydrophobicity of zinc borate.

  10. Synthesis of substituted β-diketiminate gallium hydrides via oxidative addition of H-O bonds.

    PubMed

    Herappe-Mejía, Eduardo; Trujillo-Hernández, Karla; Carlos Garduño-Jiménez, Juan; Cortés-Guzmán, Fernando; Martínez-Otero, Diego; Jancik, Vojtech

    2015-10-14

    Oxidative addition of LGa into the OH bonds from HCCCH2OH, Ph2Si(OH)2, (nBuO)2P(O)(OH) and 4-MeC6H4S(O)2(OH) results in the formation of four compounds of the general formula LGa(H)(O-X). The correlation of the Ga-O bond length and the strength of the Ga-H bond depending on the acidity of the OH group in the starting materials has been demonstrated. The molecular structures of all four compounds have been determined using single crystal X-ray diffraction experiments. DFT calculations were performed on the reacting complex of LGa with propargyl alcohol and show an OHGa hydrogen bond as the first interaction between the reagents. This reacting complex changes into a D-A complex where the oxygen atom of the propargyl alcohol coordinates to the gallium atom and in a concerted reaction the oxidative addition product is formed.

  11. Microfluorescence analysis of nanostructuring inhomogeneity in optical fibers with embedded gallium oxide nanocrystals.

    PubMed

    Mashinsky, Valery M; Karatun, Nikita M; Bogatyrev, Vladimir A; Sigaev, Vladimir N; Golubev, Nikita V; Ignat'eva, Elena S; Lorenzi, Roberto; Mozzati, Maria Cristina; Paleari, Alberto; Dianov, Evgeny M

    2012-04-01

    A spectroscopic protocol is proposed to implement confocal microfluorescence imaging to the analysis of microinhomogeneity in the nanocrystallization of the core of fibers belonging to a new kind of broadband fiber amplifier based on glass with embedded nanocrystals. Nanocrystallization, crucial for achieving an adequate light emission efficiency of transition metal ions in these materials, has to be as homogeneous as possible in the fiber to assure optical amplification. This requirement calls for a sensitive method for monitoring nanostructuring in oxide glasses. Here we show that mapping microfluorescence excited at 633 nm by a He-Ne laser may give a useful tool in this regard, thanks to quasi-resonant excitation of coordination defects typical of germanosilicate materials, such as nonbridging oxygens and charged Ge-O-Ge sites, whose fluorescence are shown to undergo spectral modifications when nanocrystals form into the glass. The method has been positively checked on prototypes of optical fibers--preventively characterized by means of scanning electron microscopy and energy dispersive spectroscopy--fabricated from preforms of Ni-doped Li₂O-Na₂O-Sb₂O₃-Ga₂O₃-GeO₂-SiO₂ glass in silica cladding and subjected to heat treatment to activate gallium oxide nanocrystal growth. The method indeed enables not only the mapping of the crystallization degree but also the identification of drawing-induced defects in the fiber cladding.

  12. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1991-11-05

    Disclosed are a new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  13. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1991-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  14. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  15. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics.

    PubMed

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V Ramgopal; Garnier, Gil

    2017-03-02

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept.

  16. Investigation of Optical Properties of Zinc Oxide Photodetector

    NASA Astrophysics Data System (ADS)

    Chism, Tyler

    UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today's photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this research a metal-semiconductor-metal UV photodetector has been fabricated by using a quartz substrate on top of which was deposited micropatterned gold in an interdigitated electrode design. On this, sparsely coated zinc oxide nano trees were hydrothermally grown. The UV photodetection device showed promise for detection applications, especially because zinc oxide is also very thermally stable, a quality which is highly sought after in today's UV photodetectors. Furthermore, the newly synthesized photodetector was used to investigate optical properties and how they respond to different stimuli. It was discovered that the photons transmitted through the sparsely coated zinc oxide nano trees decreased as the voltage across the device increased. This research is aimed at better understanding photons interaction with matter and also to open the door for new devices with tunable optical properties such as transmission.

  17. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics

    NASA Astrophysics Data System (ADS)

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V. Ramgopal; Garnier, Gil

    2017-03-01

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept.

  18. Interfacial electron transfer dynamics of photosensitized zinc oxide nanoclusters

    SciTech Connect

    Murakoshi, Kei; Yanagida, Shozo; Capel, M.

    1997-06-01

    The authors have prepared and characterized photosensitized zinc oxide (ZnO) nanoclusters, dispersed in methanol, using carboxylated coumarin dyes for surface adsorption. Femtosecond time-resolved emission spectroscopy allows the authors to measure the photo-induced charge carrier injection rate constant from the adsorbed photosensitizer to the n-type semiconductor nanocluster. These results are compared with other photosensitized semiconductors.

  19. Application of zinc oxide quantum dots in food safety

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  20. Zinc oxide nanorods functionalized paper for protein preconcentration in biodiagnostics

    PubMed Central

    Tiwari, Sadhana; Vinchurkar, Madhuri; Rao, V. Ramgopal; Garnier, Gil

    2017-01-01

    Distinguishing a specific biomarker from a biofluid sample containing a large variety of proteins often requires the selective preconcentration of that particular biomarker to a detectable level for analysis. Low-cost, paper-based device is an emerging opportunity in diagnostics. In the present study, we report a novel Zinc oxide nanorods functionalized paper platform for the preconcentration of Myoglobin, a cardiac biomarker. Zinc oxide nanorods were grown on a Whatman filter paper no. 1 via the standard hydrothermal route. The growth of Zinc oxide nanorods on paper was confirmed by a combination of techniques consisting of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS,) scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDX) analysis. The Zinc oxide nanorods modified Whatman filter paper (ZnO-NRs/WFP) was further tested for use as a protein preconcentrator. Paper-based ELISA was performed for determination of pre-concentration of cardiac marker protein Myoglobin using the new ZnO-NRs/WFP platform. The ZnO-NRs/WFP could efficiently capture the biomarker even from a very dilute solution (Myoglobin < 50 nM). Our ELISA results show a threefold enhancement in protein capture with ZnO-NRs/WFP compared to unmodified Whatman filter paper, allowing accurate protein analysis and showing the diagnostic concept. PMID:28252113

  1. Antibacterial Activity of Zinc Oxide-Coated Nanoporous Alumina

    DTIC Science & Technology

    2012-05-17

    2012 Available online 17 May 2012 Keywords: Aluminum oxide Zinc oxide Atomic layer deposition Nanoporous material Antibacterial material a b s t r...standard and mixed online with each sample through a tee. Isotopes (e.g., 66Zn and 115In) were evaluated in a peak hop- ping mode; a dwell time of...20 pore sizes nm and (n) 100 nm pore sizes that were examined against Staphylococcus epidermidis. several potential dermatologic applications for

  2. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

    SciTech Connect

    Ramana, C. V. Rubio, E. J.; Barraza, C. D.; Miranda Gallardo, A.; McPeak, Samantha; Kotru, Sushma; Grant, J. T.

    2014-01-28

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were made by sputter deposition employing a Ga{sub 2}O{sub 3} ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T{sub s}), from 25 to 600 °C. The effect of T{sub s} on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p{sub 3/2} and Ga 2p{sub 1/2} peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga{sup 3+}) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga{sub 2}O{sub 3} phase. The granular morphology of the nanocrystalline Ga{sub 2}O{sub 3} films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T{sub s}. The SE analyses indicate that the index of refraction (n) of Ga{sub 2}O{sub 3} films increases with increasing T{sub s} due to improved structural quality and packing density of the films. The n(λ) of all the Ga{sub 2}O{sub 3} films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga{sub 2}O{sub 3} films grown at T{sub s} = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga{sub 2}O{sub 3} films grown at T{sub s} ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga{sub 2}O{sub 3} films is derived.

  3. Some Aspects of Photoconductivity in Zinc Oxide

    DTIC Science & Technology

    1952-01-25

    the room to liquid air temperature range* >• ULfoattfy-* niWi H a .te^u*^•«-’""’^’’’^^ id Si £3* II» y^otog.ongujgjbl^’ty. of Zinc-Oxidei...varlpus insulators, evg.. HaCI, •Ü-. &i KOlj AgCI, and semiconductors, e,g«, CuO> Si * Ge, PbS, hus been furthered by the study of tto phoboconductive...dlseusoiuju uy § Rose20 on the effects of trapping and small capture cross section in hindering ’-n sß p;?-SB (, SI ’ recombination, and

  4. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  5. Collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors using oxidized aluminum arsenide for current confinement

    NASA Astrophysics Data System (ADS)

    Massengale, Alan Ross

    1998-12-01

    The discovery in 1990 that the wet thermal oxidation of AlAs can create a stable native oxide has added a new constituent, AlAs-oxide, to the AlGaAs/GaAs materials system. Native oxides of high Al mole-fraction AlGaAs are being used to confine electrical and/or optical fields in many types of electronic and optoelectronic structures with very promising results. Among these devices are collector-up heterojunction bipolar transistors (HBTs). Collector-up HBTs offer a means to reduce base-collector capacitance relative to their emitter-up counterparts, and thus to improve device performance. A novel method for fabricating collector-up AlGaAs/GaAs HBTs where an AlAs layer is inserted into the emitter layer and is oxidized in water vapor at 450sp°C has been developed. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. Compared to previous methods of fabricating these devices, the process of converting AlAs into an insulator requires only one growth, and does not suffer from implant damage in the base. Because the lateral oxidation of AlAs is a process that proceeds at rates of microns per minute, one of the major challenges facing its implementation is the ability to accurately control the oxidation rate over the wafer, and from one wafer to the next. In the course of work on the oxidation of AlAs, a method to lithographically form lateral oxidation stop layers has been achieved. This technique utilizes impurity induced layer disordering (IILD) in heavily Si-doped buried planes, combined with selective surface patterning and thermal annealing, to create a lateral variation in the Al mole-fraction of the layer to be oxidized.

  6. Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

    SciTech Connect

    Rubio, E. J.; Mates, T. E.; Manandhar, S.; Nandasiri, M.; Shutthanandan, V.; Ramana, C. V.

    2016-12-01

    Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films also crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.

  7. Optical and field emission properties of Zinc Oxide nanostructures.

    PubMed

    Pan, Hui; Zhu, Yanwu; Ni, Zhenhua; Sun, Han; Poh, Cheekok; Lim, Sanhua; Sow, Chornghaur; Shen, Zexiang; Feng, Yuanping; Lin, Jianyi

    2005-10-01

    Zinc Oxide (ZnO) nano-pikes were produced by oxidative evaporation and condensation of Zn powders. The crystalline structure and optical properties of the ZnO nanostructures (ZnONs) greatly depend on the deposition position of the ZnONs. TEM and XRD indicated that the ZnONs close to the reactor center, ZnON-A, has better crystalline structure than the ZnONs away from the center, ZnON-B. ZnON-A showed the PL and Raman spectra characteristic of perfect ZnO crystals, whereas ZnON-B produced very strong green emission band at 500 nm in the photoluminescence (PL) spectrum and very strong Raman scattering peak at 560 cm(-1), both related to the oxygen deficiency due to insufficient oxidation of zinc vapor. ZnON-B exhibited better field emission properties with higher emission current density and lower turn-on field than ZnON-A.

  8. Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

    SciTech Connect

    Ning, J.Q.; Xu, S.J.; Wang, P.W.; Song, Y.P.; Yu, D.P.; Shan, Y.Y.; Lee, S.T.; Yang, H.

    2012-11-15

    Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.

  9. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  10. Zinc oxide's hierarchical nanostructure and its photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Kanjwal, Muzafar A.; Sheikh, Faheem A.; Barakat, Nasser A. M.; Li, Xiaoqiang; Kim, Hak Yong; Chronakis, Ioannis S.

    2012-02-01

    In this study, a new hierarchical nanostructure that consists of zinc oxide (ZnO) was produced by the electrospinning process followed by a hydrothermal technique. First, electrospinning of a colloidal solution that consisted of zinc nanoparticles, zinc acetate dihydrate and poly(vinyl alcohol) was performed to produce polymeric nanofibers embedding solid nanoparticles. Calcination of the obtained electrospun nanofiber mats in air at 500 °C for 90 min produced pure ZnO nanofibers with rough surfaces. The rough surface strongly enhanced outgrowing of ZnO nanobranches when a specific hydrothermal technique was used. Methylene blue dihydrate was used to check the photocatalytic ability of the produced nanostructures. The results indicated that the hierarchical nanostructure had a better performance than the other form.

  11. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny Xiao-zhe

    2003-01-01

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO2 plasma or by N+ implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zni, a native shallow donor. In NO2-grown ZnO films, the n-type conductivity is attributed to (N2)O, a shallow double donor. In NO2-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N2O and N2. Upon annealing, N2O decomposes into N2 and O2. In furnace-annealed samples N2 redistributes diffusively and forms gaseous N2 bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N+ implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N2)O and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  12. Zinc oxide films prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Maciąg, Andrzej; Sagan, Piotr; Kuźma, Marian; Popovych, Volodymyr

    2016-12-01

    In this work we developed and tested spray pyrolysis system for layers deposition. In the system we have used ultrasonic apparatus (nebulizator) as a sprayer. A zinc nitrate aqueous solution has been used as a precursor solution. The idea of the method is the decomposition of nitrate on a hot substrate according to the reaction Zn(NO3)2 → ZnO +2 NO2 +1/2O2. The layers were grown on glass, (001)Si and KCl substrates at the temperatures 300 - 500°C. The thickness of the obtained layers was in the range 50 - 500 nm, depending on the growth time and rate. The influence of substrate temperature on the morphology of the layers has been studied by SEM method. The energy gap of the layers was found to be the range of 3.26-3.3 eV from their absorption spectra.

  13. A long life zinc oxide-titanium oxide sorbent for moving bed reactors

    SciTech Connect

    Copeland, R.; Cesario, M.; Dubovik, M.; Feinberg, D.; Windecker, B.; Yang, J.

    1996-12-31

    Coal Fired Gasifier Combined Cycles (GCCs) have both high efficiency and very low emissions. GCCs are in critical need of a method to remove the H{sub 2}S produced from the sulfur in the coal from the hot gases. There has been extensive research on hot gas clean-up systems, focused on the use of a zinc oxide based sorbent (e.g., zinc titanate). However, the previous sorbents show significant losses in sulfur capacity with cycling. TDA Research, Inc. recently increased the zinc oxide content and sulfur loadings while simultaneously improving the attrition resistance. The improved fabrication method produces long life, low cost sorbent containing zinc oxide. The authors are currently testing sorbents at conditions simulating a moving bed reactor for GCC [i.e., 20 atm, 482 C (900 F) to 538 C (1,000 F), and 1% H{sub 2}S].

  14. Thin film zinc oxide deposited by CVD and PVD

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  15. Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

    NASA Astrophysics Data System (ADS)

    Rubio, Ernesto Javier

    Currently, there is enormous interest in research, development and optimization of the combustion processes for energy harvesting. Recent statistical and economic analyses estimated that by improving the coal-based firing/combustion processes in the power plants, savings up to $450-500 million yearly can be achieved. Advanced sensors and controls capable of withstanding extreme environments such as high temperatures, highly corrosive atmospheres, and high pressures are critical to such efficiency enhancement and cost savings. For instance, optimization of the combustion processes in power generation systems can be achieved by sensing, monitoring and control of oxygen, which is a measure of the completeness of the process and can lead to enhanced efficiency and reduced greenhouse gas emissions. However, despite the fact that there exists a very high demand for advanced sensors, the existing technologies suffer from poor 'response and recovery times' and 'long-term stability.' Motivated by the aforementioned technological challenges, the present work was focused on high-temperature (≥700 °C) oxygen sensors for application in power generation systems. The objective of the present work is to investigate nanostructured gallium oxide (2O3) based sensors for oxygen sensing, where we propose to conduct in-depth exploration of the role of refractory metal (tungsten, W, in this case) doping into 2O 3 to enhance the sensitivity, selectivity, stability ("3S" criteria) and reliability of such sensors while keeping cost economical. Tungsten (W) doped gallium oxide (2O3) thin films were deposited via rf-magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying the sputtering power applied to the W-target in order to achieve variable W content into 2O3 films while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-grown and post-annealed W-doped 2O3

  16. Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

    SciTech Connect

    Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.; Creange, Nicole C.; Constantin, Costel; Sun, Kai

    2015-02-28

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  17. Recent progress in hydrothermal synthesis of zinc oxide nanomaterials.

    PubMed

    Djurisic, A B; Chen, X Y; Leung, Y H

    2012-06-01

    Hydrothermal synthesis is of considerable interest due to its low cost, simplicity and relatively low growth temperature (typically below 200 °C). Since the synthesis is performed in aqueous solutions (no organic solvents), it can also be safe and environmentally friendly (depending on precursor chemicals). Consequently, it has been a subject of intense research in recent years. In this article, we review recent progress in hydrothermal synthesis of zinc oxide nanomaterials, with focus on practical relevance for a variety of applications.

  18. Enterococcus faecalis zinc-responsive proteins mediate bacterial defence against zinc overload, lysozyme and oxidative stress.

    PubMed

    Abrantes, Marta C; Kok, Jan; Silva Lopes, Maria de Fátima

    2014-12-01

    Two Enterococcus faecalis genes encoding the P-type ATPase EF1400 and the putative SapB protein EF0759 were previously shown to be strongly upregulated in the presence of high concentrations of zinc. In the present work, we showed that a Zn(2+)-responsive DNA-binding motif (zim) is present in the promoter regions of these genes. Both proteins were further studied with respect to their involvement in zinc homeostasis and invasion of the host. EF0759 contributed to intramacrophage survival by an as-yet unknown mechanism(s). EF1400, here renamed ZntAEf, is an ATPase with specificity for zinc and plays a role in dealing with several host defences, i.e. zinc overload, oxidative stress and lysozyme; it provides E. faecalis cells with the ability to survive inside macrophages. As these three host defence mechanisms are important at several sites in the host, i.e. inside macrophages and in saliva, this work suggested that ZntAEf constitutes a crucial E. faecalis defence mechanism that is likely to contribute to the ability of this bacterium to endure life inside its host.

  19. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    PubMed Central

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-01-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2–4 nm) nanoparticles. PMID:27734828

  20. Radial growth of zinc oxide nanowire for piezoelectric nanogenerator application

    NASA Astrophysics Data System (ADS)

    Rasouli, Safa

    2017-04-01

    Nano- and micro-self-biased sensors employed environmental harvested energy, which are provided by different methods, such as piezoelectric. Piezoelectric materials are capable of producing electrical energy from environmental mechanical force. In this paper, a radial layer of well-arrayed hexagonal zinc oxide nanowires is grown on carbon fiber substrate using a two-step Chemical deposition method of metal salt growth. The resulted morphology is examined using Field Emission Scanning Electron Microscopy (FESEM) micrographs and X-ray Diffraction (XRD) pattern which indicates the quality and the crystallization order of the samples. In addition, composition of the material is studied using a Fourier Transform Infrared (FTIR) spectroscopy method. The results show that zinc oxide nanowires are well managed in vertical direction on the cylindrical carbon fibers. The hexagonal nanowires are grown with a length from 206 to 286 nm (Nanometer) and the diameter from 75 to 103 nm. The results of FTIR spectroscopy and XRD also illustrate the wurtzite structure of zinc oxide. The synthesized nanowires are then applied in a flexible capacitive piezoelectric nanogenerator consisting of a thin Ag layer as the upper contact and a carbon substrate as the back contact which are separated by a PMMA dielectric film. The output current and voltage are measured by applying a random pulse mechanical force on the upper contact. A maximum voltage and current of 14 mV (millivolt) and 20 nA (nanoampere) are generated at the output of nanogenerator, respectively.

  1. Nanocrystalline zinc oxide for the decontamination of sarin.

    PubMed

    Mahato, T H; Prasad, G K; Singh, Beer; Acharya, J; Srivastava, A R; Vijayaraghavan, R

    2009-06-15

    Nanocrystalline zinc oxide materials were prepared by sol-gel method and were characterized by X-ray diffraction, scanning electron microscopy, thermogravimetry, nitrogen adsorption and infrared spectroscopy techniques. The data confirmed the formation of zinc oxide materials of zincite phase with an average crystallite size of approximately 55 nm. Obtained material was tested as destructive adsorbent for the decontamination of sarin and the reaction was followed by GC-NPD and GC-MS techniques. The reaction products were characterized by GC-MS and the data explored the role of hydrolysis reaction in the detoxification of sarin. Sarin was hydrolyzed to form surface bound non-toxic phosphonate on the surface of nano-zinc oxide. The data also revealed the values of rate constant and half-life to be 4.12h(-1) and 0.16 h in the initial stages of the reaction and 0.361 h(-1) and 1.9h at the final stages of the reaction for the decontamination reaction on nanocrystalline ZnO.

  2. Excimer laser interaction with zinc oxide

    NASA Astrophysics Data System (ADS)

    Khan, Enamul Haque

    When single crystal ZnO is exposed to 193-nm laser photons in vacuum at fluences below 100 mJ/cm2, isolated Zn vacancies are produced due to the emission of energetic Zn+. The pair wise formation of Zn vacancies and Zn+ interstitials is attributed to the photochemical excitation of anti-bonding Zn-O bonds. Interstitial Zn + diffuses to the surface where it is loosely bound to the surface---often atop a photoionizable electron trap; adsorbed Zn+ is emitted when the underlying trap is photoionized. Isolated Zn vacancies also diffuse following the laser pulse. These electron traps can reduce the near-surface free carrier concentration by as much as a factor of five on irradiated samples. At fluences between 150 and 200 mJ/cm2, 193-nm irradiation produces sustained emission of ionic and neutral species. The near-surface region of the irradiated sample becomes increasingly metallic and zinc rich. At fluences in the 250--300 mJ/cm2 range, a slower component of the Zn+ emission appears which is attributed to the excitation of an auto-ionizing state at 12.77 eV. The same excitation also yields Zn atomic light emission, predominately due to transitions on the triplet manifold. Rydberg Zn* atoms in high-lying quantum states appear at a threshold fluence of about 350 mJ/cm2. At fluences greater than or equal to 2 J/cm2, atomic light emission due to optical breakdown is observed.

  3. Paradoxical zinc toxicity and oxidative stress in the mammary gland during marginal dietary zinc deficiency

    PubMed Central

    Bostanci, Zeynep; Mack, Ronald P.; Lee, Sooyeon; Soybel, David I.; Kelleher, Shannon L.

    2014-01-01

    Zinc (Zn) regulates numerous cellular functions. Zn deficiency is common in females; ~80% of women and 40% of adolescent girls consume inadequate Zn. Zn deficiency enhances oxidative stress, inflammation and DNA damage. Oxidative stress and inflammation is associated with breast disease. We hypothesized that Zn deficiency increases oxidative stress in the mammary gland, altering the microenvironment and architecture. Zn accumulated in the mammary glands of Zn deficient mice and this was associated with macrophage infiltration, enhanced oxidative stress and over-expression of estrogen receptor α. Ductal and stromal hypercellularity was associated with aberrant collagen deposition and disorganized e-cadherin. Importantly, these microenvironmental alterations were associated with substantial impairments in ductal expansion and mammary gland development. This is the first study to show that marginal Zn deficiency creates a toxic microenvironment in the mammary gland impairing breast development. These changes are consistent with hallmarks of potential increased risk for breast disease and cancer. PMID:25088245

  4. Zinc-oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasael

    2010-03-23

    Zinc oxide-based sorbents, and processes for preparing and using them are provided. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  5. Zinc oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2005-10-04

    Zinc oxide-based sorbents, and processes for preparing and using them are provided, wherein the sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents contain an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2 O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, containing a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  6. Durable zinc oxide-containing sorbents for coal gas desulfurization

    DOEpatents

    Siriwardane, Ranjani V.

    1996-01-01

    Durable zinc-oxide containing sorbent pellets for removing hydrogen sulfide from a gas stream at an elevated temperature are made up to contain titania as a diluent, high-surface-area silica gel, and a binder. These materials are mixed, moistened, and formed into pellets, which are then dried and calcined. The resulting pellets undergo repeated cycles of sulfidation and regeneration without loss of reactivity and without mechanical degradation. Regeneration of the pellets is carried out by contacting the bed with an oxidizing gas mixture.

  7. MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air

    NASA Astrophysics Data System (ADS)

    Pflitsch, Christian; Nebatti, Abdelkader; Brors, Georg; Atakan, Burak

    2012-06-01

    The metalorganic chemical vapour deposition (MOCVD) of thin zinc oxide films on borosilicate glass and silicon substrates in a hot-wall CVD-reactor (HWR) was studied. Zinc acetylacetonate (Zn(acac)2) and air were used as precursors. The aim of this work was to optimize the deposition parameters, such as pressure and deposition temperature, with respect to the film quality, structure, and homogeneity. Most experiments were performed at atmospheric pressure; this approach avoids the usage of an expensive vacuum system. It turned out that polycrystalline zinc oxide is grown at deposition temperatures above 613 K. Above 823 K, they additionally are c-axis orientated. At atmospheric pressure and lower temperature (<773 K) the film deposition is homogeneously over the whole tube furnace while at higher temperature inhomogeneous film growth and particle formation are observed, indicating a shift of the growth mechanism to the diffusion controlled regime. Although the homogeneity is improved by using higher flow velocities at atmospheric pressure, particle growth cannot be suppressed. Only at reduced pressure, which was 200 mbar in the present case, the deposition at 823 K is kinetically controlled and without particle formation, resulting in the homogeneous growth of well adhering ZnO films with c-axis orientation.

  8. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, A.D.; Modine, F.A.; Lauf, R.J.; Alim, M.A.; Mahan, G.D.; Bartkowiak, M.

    1998-12-29

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2--4.0% oxide of at least one rare earth element, 0.5--4.0% Co{sub 3}O{sub 4}, 0.05--0.4% K{sub 2}O, 0.05--0.2% Cr{sub 2}O{sub 3}, 0--0.2% CaO, 0.00005--0.01% Al{sub 2}O{sub 3}, 0--2% MnO, 0--0.05% MgO, 0--0.5% TiO{sub 3}, 0--0.2% SnO{sub 2}, 0--0.02% B{sub 2}O{sub 3}, balance ZnO. 4 figs.

  9. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, April D.; Modine, Frank A.; Lauf, Robert J.; Alim, Mohammad A.; Mahan, Gerald D.; Bartkowiak, Miroslaw

    1998-01-01

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2-4.0% oxide of at least one rare earth element, 0.5-4.0% Co.sub.3 O.sub.4, 0.05-0.4% K.sub.2 O, 0.05-0.2% Cr.sub.2 O.sub.3, 0-0.2% CaO, 0.00005-0.01% Al.sub.2 O.sub.3, 0-2% MnO, 0-0.05% MgO, 0-0.5% TiO.sub.3, 0-0.2% SnO.sub.2, 0-0.02% B.sub.2 O.sub.3, balance ZnO.

  10. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  11. Silver/zinc oxide self-assembled nanostructured bolometer

    NASA Astrophysics Data System (ADS)

    Sanchez, John E.; González, Gabriel; Vera-Reveles, Gustavo; Velazquez-Salazar, J. Jesus; Bazan-Diaz, Lourdes; Gutiérrez-Hernández, José M.; José-Yacaman, Miguel; Ponce, Arturo; González, Francisco J.

    2017-03-01

    Temperature coefficient of resistance (TCR) is the main figure of merit for bolometric detectors. Reports show that zinc oxide can have TCR values higher than vanadium oxide (VOx) and amorphous silicon (a-Si), which are the most common materials used in bolometric applications, however its high resistivity makes it difficult to match it to read-out electronics. In this work, self-assembled nanostructures of Silver/Zinc oxide (Ag/ZnO) have been fabricated as well as their electrical and optical properties were measured as function of the Ag/ZnO concentration ratio. It was found that the nanostructures with the highest ZnO concentration exhibited a temperature coefficient of resistance as high as -11.8% K-1 near room temperature. Moreover, the TCR values and conductivity of the material can be tuned with the Ag/ZnO concentration ratio. This tuning flexibility allows this material to be better matched to read-out integrated circuits.

  12. The zinc ferrite obtained by oxidative precipitation method as a catalyst in n-butanol conversion

    SciTech Connect

    Klimkiewicz, Roman Wolska, Jolanta; Przepiera, Aleksander; Przepiera, Krystyna; Jablonski, Maciej; Lenart, Stanislaw

    2009-01-08

    This paper presents the results of catalytic properties of n-butanol conversion of the zinc ferrite obtained by oxidative precipitation method. The zinc ferrite showed good dehydrogenating activity but also catalyzed consecutive bimolecular condensation of emerged aldehyde particles into symmetrical ketone. The zinc-iron oxide of spinel structure was prepared from ferrous sulfate, which forms as a waste during the titanium dioxide production. The X-ray diffraction methods (XRD, XRF) were used in determining the structure and composition of obtained zinc ferrite, while thermogravimetry (TG-DTG), and differential thermal analysis (DTA) were used in the study of thermal transformations of zinc spinel in air.

  13. Developmental toxicity of intravenously injected zinc oxide nanoparticles in rats.

    PubMed

    Lee, Jinsoo; Yu, Wook-Joon; Song, Jeongah; Sung, Changhyun; Jeong, Eun Ju; Han, Ji-Seok; Kim, Pilje; Jo, Eunhye; Eom, Ikchun; Kim, Hyun-Mi; Kwon, Jung-Taek; Choi, Kyunghee; Choi, Jonghye; Kim, Heyjin; Lee, Handule; Park, Juyoung; Jin, Seon Mi; Park, Kwangsik

    2016-12-01

    Recent toxicity studies of zinc oxide nanoparticles by oral administration showed relatively low toxicity, which may be resulted from low bioavailability. So, the intrinsic toxicity of zinc oxide nanoparticles needs to be evaluated in the target organs by intravenous injection for full systemic concentration of the administered dosage. Although the exposure chance of injection route is low compared to oral and/or inhalation route, it is important to see the toxicity with different exposure routes to get better risk management tool. In this study, the effects of zinc oxide nanoparticles on dams and fetuses were investigated in rats after intravenous injection (5, 10, and 20 mg/kg) from gestation day 6 to 20. Two of 20 dams in the 20 mg/kg treatment group died during the treatment period. Hematological examination and serum biochemistry showed dose-dependent toxicity in treated dams. Histopathological analysis of treated dams revealed multifocal mixed cell infiltration and thrombosis in lung, tubular dilation in kidneys, and extramedullary hemopoiesis in liver. Total dead fetuses (post-implantation loss) were increased and the body weight of fetus was decreased in the 20 mg/kg treatment group. Statistical differences in corpora lutea, resorption, placental weight, morphological alterations including external, visceral and skeletal malformations were not observed in treated groups. Based on the data, lowest observed adverse effect level of injection route was suggested to be 5 mg/kg in dams and no observed adverse effect level was suggested to be 10 mg/kg in fetal developmental toxicity.

  14. Electron beam irradiation stiffens zinc tin oxide nanowires.

    PubMed

    Zang, Jianfeng; Bao, Lihong; Webb, Richard A; Li, Xiaodong

    2011-11-09

    We report a remarkable phenomenon that electron beam irradiation (EBI) significantly enhances the Young's modulus of zinc tin oxide (ZTO) nanowires (NWs), up to a 40% increase compared with the pristine NWs. In situ uniaxial buckling tests on individual NWs were conducted using a nanomanipulator inside a scanning electron microscope. We propose that EBI results in substantial atomic bond contraction in ZTO NWs, accounting for the observed mechanically stiffening. This argument is supported by our experimental results that EBI also reduces the electrical conductivity of ZTO NWs.

  15. Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition

    SciTech Connect

    Klochko, N. P. Klepikova, K. S.; Khrypunov, G. S.; Volkova, N. D.; Kopach, V. R.; Lyubov, V. M.; Kirichenko, M. V.; Kopach, A. V.

    2015-02-15

    Conditions for the pulsed electrochemical deposition of nanostructured zinc oxide arrays with a certain morphology, crystal structure, and optical properties from aqueous electrolytes onto substrates of transparent electrically conducting tin dioxide and on single-crystal silicon wafers with built-in homojunctions are studied in order to develop antireflection coatings for solar cells. It is shown that it is possible to obtain single-layer planar antireflection coatings or arrays of nanorods of this material, both having the form of hexagonal prisms and exhibiting the moth-eye effect.

  16. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  17. Behavior of zinc oxide surge arresters under pollution

    SciTech Connect

    Feser, F.; Kohler, W.; Qiu, D. ); Chrzan, K. )

    1991-04-01

    This paper presents results of pollution tests with AC voltages which were carried out with a multi-unit zinc oxide arrester. The interaction between the polluted porcelain housing and the inner varistor column due to capacitive coupling has been found to be responsible for the temperature rise of varistor elements. The different voltage distribution between inside and outside of the arrester also causes a high radial electric field which can lead to internal discharges if the radial insulation system is not properly designed. These internal discharges may damage varistor elements which are not adequately coated and may cause a total destruction of the arrester.

  18. Photodeposition of copper and chromia on gallium oxide: the role of co-catalysts in photocatalytic water splitting.

    PubMed

    Busser, G Wilma; Mei, Bastian; Pougin, Anna; Strunk, Jennifer; Gutkowski, Ramona; Schuhmann, Wolfgang; Willinger, Marc-Georg; Schlögl, Robert; Muhler, Martin

    2014-04-01

    Split second: The photocatalytic activity of gallium oxide (β-Ga2 O3) depends strongly on the co-catalysts CuOx and chromia, which can be efficiently deposited in a stepwise manner by photoreduction of Cu(2+) and CrO4 (2-). The water-splitting activity can be tuned by varying the Cu loading in the range 0.025-1.5 wt %, whereas the Cr loading is not affecting the rate as long as small amounts (such as 0.05 wt %) are present. Chromia is identified as highly efficient co-catalyst in the presence of CuOx : it is essential for the oxidation of water.

  19. A combined marginal deficiency of copper and zinc does not exacerbate oxidant stress asssociated with copper or zinc deficiency

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Both copper deficiency (Cu-def) and zinc deficiency (Zn-def) result in oxidative stress. Thus, an experiment was conducted to determine whether a marginal Zn-def amplified oxidative stress responses to a marginal Cu-def, or vice versa. Weanling male Sprague-Dawley rats were assigned to groups of 10 ...

  20. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

    NASA Astrophysics Data System (ADS)

    Morales, Daniel; Stoute, Nicholas A.; Yu, Zhiyuan; Aspnes, David E.; Dickey, Michael D.

    2016-08-01

    Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ɛ are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

  1. Electrochemical deposition of zinc oxide nanorods for hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Torres Damasco Ty, Jennifer; Yanagi, Hisao

    2015-04-01

    Zinc oxide (ZnO) nanorod arrays for inorganic/organic hybrid solar cells were electrochemically deposited on indium tin oxide (ITO) substrates with a rotating disk electrode setup. The addition of a ZnO seed layer on the ITO prior to electrochemical deposition improved the morphology of the nanorods, resulting in nanorods with smaller and homogenous diameters as well as a higher degree of vertical orientation on to the substrate. The ZnO films deposited on the seeded ITO substrates had higher optical transmittance and lower concentration of defects. Chronoamperometric transient curves show that nucleation and coalescence occurred later for bare ITO substrates, indicating lower densities of initial nuclei, resulting in the growth of nanorods with larger diameters. The solar cell characteristics of the devices fabricated from the seeded ITO substrates were better. The seed layer also acts as a hole-blocking layer, preventing the direct contact between the hole-transporting polymer material and the ITO.

  2. Design and photocatalytic activity of nanosized zinc oxides

    NASA Astrophysics Data System (ADS)

    Gancheva, M.; Markova-Velichkova, M.; Atanasova, G.; Kovacheva, D.; Uzunov, I.; Cukeva, R.

    2016-04-01

    Zinc oxide particles with various morphologies were successfully prepared via three synthesis methods: precipitation; tribophysical treatment and sonochemistry. The as-synthesized samples were characterized by X-ray diffraction (XRD); infrared spectroscopy (IR); scanning electron microscope (SEM); BET specific surface area; electron-paramagnetic resonance (EPR), UV-Vis absorption/diffuse reflectance and X-ray photoelectron spectroscopy (XPS). Photocatalytic activities of the samples were evaluated by degradation of Malachite Green (MG) in an aqueous solution under UV and visible irradiation. The obtained ZnO powders possess crystallites size below 20 nm. The ZnO with spherical particles were obtained by precipitation method. The sonochemistry approach leads to preparation of ZnO with nanorod particles. The calculated band gaps of various ZnO powders belong to the range from 3.12 to 3.30 eV. The obtained polycrystalline zinc oxides exhibit good photocatalytic activity which is strongly influenced by the preparation conditions. The nanorod ZnO exhibits high photocatalytic activity under UV irradiation which is attributed to the morphology and the geometric surface of the particles. The ZnO obtained by precipitation has better photocatalytic efficiency under visible irradiation due to high B.E.T. specific surface area and the low level of band gap. Tribophysical treatment of a particle size-homogeneous system leads to deterioration of the photocatalytic activity of the material.

  3. Zinc oxide nanoparticles as novel alpha-amylase inhibitors

    NASA Astrophysics Data System (ADS)

    Dhobale, Sandip; Thite, Trupti; Laware, S. L.; Rode, C. V.; Koppikar, Soumya J.; Ghanekar, Ruchika-Kaul; Kale, S. N.

    2008-11-01

    Amylase inhibitors, also known as starch blockers, contain substances that prevent dietary starches from being absorbed by the body via inhibiting breakdown of complex sugars to simpler ones. In this sense, these materials are projected as having potential applications in diabetes control. In this context, we report on zinc oxide nanoparticles as possible alpha-amylase inhibitors. Zinc oxide nanoparticles have been synthesized using soft-chemistry approach and 1-thioglycerol was used as a surfactant to yield polycrystalline nanoparticles of size ˜18 nm, stabilized in wurtzite structure. Conjugation study and structural characterization have been done using x-ray diffraction technique, Fourier transform infrared spectroscopy, UV-visible spectroscopy, and transmission electron microscopy. Cytotoxicity studies on human fibrosarcoma (HT-1080) and skin carcinoma (A-431) cell lines as well as mouse primary fibroblast cells demonstrate that up to a dose of 20 μg/ml, ZnO nanoparticles are nontoxic to the cells. We report for the first time the alpha-amylase inhibitory activity of ZnO nanoparticles wherein an optimum dose of 20 μg/ml was sufficient to exhibit 49% glucose inhibition at neutral pH and 35 °C temperature. This inhibitory activity was similar to that obtained with acarbose (a standard alpha-amylase inhibitor), thereby projecting ZnO nanoparticles as novel alpha-amylase inhibitors.

  4. Synthesis and characterization of Ar-annealed zinc oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Kuthirummal, Narayanan; Smith, Gregory M.; Lopez, Leisha; Podila, Ramakrishna; Howell, Jason; Dun, Chaochao; Rao, Apparao M.

    2016-09-01

    Nanostructured zinc oxide samples were synthesized through CVD and annealed in argon. The samples were investigated using SEM, TEM, XRD, and UV/VIS/FTIR photoacoustic spectroscopy. The SEM/TEM images show relatively spherical particles that form elongated, connected domains post-anneal. XRD measurements indicate a typical wurtzite structure and reveal an increase in average grain size from 16.3 nm to 21.2 nm in Ar-annealed samples over pristine samples. Visible photoacoustic spectra reveal the contribution of defect levels on the absorption edge of the fundamental gap of zinc oxide. The steepness parameter of the absorption edge, which is inversely proportional to the width of the absorption edge, decreased from 0.1582 (pristine) to 0.1539 (annealed for 90 minutes) revealing increased density of defect states upon annealing. The FTIR photoacoustic spectra show an intense peak at 412 cm-1 and a shoulder at 504 cm-1 corresponding to the two transverse optical stretching modes of ZnO. These results may indicate a self-assembly mechanism upon anneal under Ar atmosphere leading to early-stage nanorod growth.

  5. Ferrate(VI) oxidation of zinc-cyanide complex.

    PubMed

    Yngard, Ria; Damrongsiri, Seelawut; Osathaphan, Khemarath; Sharma, Virender K

    2007-10-01

    Zinc-cyanide complexes are found in gold mining effluents and in metal finishing rinse water. The effect of Zn(II) on the oxidation of cyanide by ferrate(VI) (Fe(VI)O(4)(2-), Fe(VI)) was thus investigated by studying the kinetics of the reaction of Fe(VI) with cyanide present in a potassium salt of a zinc cyanide complex (K(2)Zn(CN)(4)) and in a mixture of Zn(II) and cyanide solutions as a function of pH (9.0-11.0). The rate-law for the oxidation of Zn(CN)(4)(2-) by Fe(VI) was found to be -d[Fe(VI)]/dt=k[Fe(VI)][Zn(CN)(4)(2-)](0.5). The rate constant, k, decreased with an increase in pH. The effect of temperature (15-45 degrees C) on the oxidation was studied at pH 9.0, which gave an activation energy of 45.7+/-1.5kJmol(-1). The cyanide oxidation rate decreased in the presence of the Zn(II) ions. However, Zn(II) ions had no effect on the cyanide removal efficiency by Fe(VI) and the stoichiometry of Fe(VI) to cyanide was approximately 1:1; similar to the stoichiometry in absence of Zn(II) ions. The destruction of cyanide by Fe(VI) resulted in cyanate. The experiments on removal of cyanide from rinse water using Fe(VI) demonstrated complete conversion of cyanide to cyanate.

  6. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    NASA Astrophysics Data System (ADS)

    de Melo, Ronaldo P.; Oliveira, Nathalia Talita C.; Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Falcão, Eduardo H. L.; Alves, Severino; da Luz, Leonis L.; Chassagnon, Remi; de Araújo, Cid B.; Sacilotti, Marco

    2016-04-01

    A novel procedure based on a two-step method was developed to obtain β-Ga2O3 nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga2O3 nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga2O3 material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  7. Determining adaptive and adverse oxidative stress responses in human bronical epithelial cells exposed to zinc

    EPA Science Inventory

    Determining adaptive and adverse oxidative stress responses in human bronchial epithelial cells exposed to zincJenna M. Currier1,2, Wan-Yun Cheng1, Rory Conolly1, Brian N. Chorley1Zinc is a ubiquitous contaminant of ambient air that presents an oxidant challenge to the human lung...

  8. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide.

    PubMed

    Sampson, Matthew D; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-04-05

    Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazing-incidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

  9. An assessment of zinc oxide nanosheets as a selective adsorbent for cadmium

    PubMed Central

    2013-01-01

    Zinc oxide nanosheet is assessed as a selective adsorbent for the detection and adsorption of cadmium using simple eco-friendly extraction method. Pure zinc oxide nanosheet powders were characterized using field emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The zinc oxide nanosheets were applied to different metal ions, including Cd(II), Cu(II), Hg(II), La(III), Mn(II), Pb(II), Pd(II), and Y(III). Zinc oxide nanosheets were found to be selective for cadmium among these metal ions when determined by inductively coupled plasma-optical emission spectrometry. Moreover, adsorption isotherm data provided that the adsorption process was mainly monolayer on zinc oxide nanosheets. PMID:24011201

  10. Influence of Camellia sinensis extract on Zinc Oxide nanoparticle green synthesis

    NASA Astrophysics Data System (ADS)

    Nava, O. J.; Luque, P. A.; Gómez-Gutiérrez, C. M.; Vilchis-Nestor, A. R.; Castro-Beltrán, A.; Mota-González, M. L.; Olivas, A.

    2017-04-01

    This work addresses low cost, non-toxic green synthesis of Zinc Oxide nanoparticles prepared using different amounts of Camellia sinensis extract. The Synthesized material was studied and characterized through Fourier transform infrared spectroscopy (FTIR), x-ray diffraction (XRD), transmission electron microscopy (TEM). The Zinc Oxide nanoparticles presented the desired Znsbnd O bond at 618 cm-1, demonstrated growth in a purely hexagonal Wurtzite crystal structure, and, depending on the amount of extract used, they presented different size and shape homogeneity. The photocatalytic activity of the obtained Zinc Oxide nanoparticles was studied. The photocatalytic degradation studies were done at a 1:1 M ratio of methylene blue to Zinc Oxide nanoparticles under UV light. The obtained results presented a better degradation rate than commercially available Zinc Oxide nanoparticles.

  11. Resistance of extremely halophilic archaea to zinc and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Salgaonkar, Bhakti B.; Das, Deepthi; Bragança, Judith Maria

    2016-02-01

    Industrialization as well as other anthropogenic activities have resulted in addition of high loads of metal and/or metal nanoparticles to the environment. In this study, the effect of one of the widely used heavy metal, zinc (Zn) and zinc oxide nanoparticles (ZnO NPs) on extremely halophilic archaea was evaluated. One representative member from four genera namely Halococcus, Haloferax, Halorubrum and Haloarcula of the family Halobacteriaceae was taken as the model organism. All the haloarchaeal genera investigated were resistant to both ZnCl2 and ZnO NPs at varying concentrations. Halococcus strain BK6 and Haloferax strain BBK2 showed the highest resistance in complex/minimal medium of up to 2.0/1.0 mM ZnCl2 and 2.0/1.0-0.5 mM ZnO NP. Accumulation of ZnCl2/ZnO NPs was seen as Haloferax strain BBK2 (287.2/549.6 mg g-1) > Halococcus strain BK6 (165.9/388.5 mg g-1) > Haloarcula strain BS2 (93.2/28.5 mg g-1) > Halorubrum strain BS17 (29.9/16.2 mg g-1). Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM-EDX) analysis revealed that bulk ZnCl2 was sorbed at a higher concentration (21.77 %) on the cell surface of Haloferax strain BBK2 as compared to the ZnO NPs (14.89 %).

  12. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Lim, Jun-Hyung; Lee, Je-Hun; Kim, Yong-Sung; Ahn, Byung Du; Kim, Dae Hwan

    2014-10-01

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy VO2+ or peroxide O22- with the increase of EOT. It was also found that the VO2+-related extrinsic factor accounts for 80%-92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O22- related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  13. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  14. Zinc oxide and related compounds: order within the disorder

    NASA Astrophysics Data System (ADS)

    Martins, R.; Pereira, Luisa; Barquinha, P.; Ferreira, I.; Prabakaran, R.; Goncalves, G.; Goncalves, A.; Fortunato, E.

    2009-02-01

    This paper discusses the effect of order and disorder on the electrical and optical performance of ionic oxide semiconductors based on zinc oxide. These materials are used as active thin films in electronic devices such as pn heterojunction solar cells and thin-film transistors. Considering the expected conduction mechanism in ordered and disordered semiconductors the role of the spherical symmetry of the s electron conduction bands will be analyzed and compared to covalent semiconductors. The obtained results show p-type c-Si/a-IZO/poly-ZGO solar cells exhibiting efficiencies above 14%, in device areas of about 2.34 cm2. Amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance than the polycrystalline TFTs based on ZnO, translated by ION/IOFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2/Vs. Apart from that, preliminary data on p-type oxide TFT based on the Zn-Cu-O system will also be presented.

  15. Characterization of zinc oxide and zinc ferrite doped with Ti or Cu as sorbents for hot gas desulphurization

    NASA Astrophysics Data System (ADS)

    Pineda, Miguel; Fierro, JoséL. G.; Palacios, JoséM.; Cilleruelo, Cristina; García, Enrique; Ibarra, JoséV.

    1997-09-01

    Three series of samples based on zinc oxide and zinc ferrite doped with copper or titanium oxides have been prepared in order to improve their performance as regenerable sorbents for hot gas desulphurization. In each series the oxide concentration was varied over a broad range to enhance the formation of different chemical species. The stability against reducing agents and the performance of these sorbents were studied elsewhere. The characterization of fresh, sulphided and regenerated samples was undertaken using XRD, FT-Raman and XPS techniques. The addition of Ti increased the stability of ZnO against reducing agents such as H2, up to an atomic ratio Ti/Zn= 0.5 through the formation of Zn2TiO4. Furthermore, the Ti excess is segregated as TiO2. The addition of Cu to zinc ferrite did not affect the stability but improved the sorbent performance enhancing the ferrite formation and migrating to the sorbent surface during the calcination and regeneration steps. The addition of Ti to zinc ferrite prevented its decomposition into the two component oxides below 600°C stabilizing the structure through the inclusion of Ti in the ferrite lattice. In the sulphiding process Fe, Zn and Cu oxides were converted into the lowest oxidation state sulphides that facilitated the sorbent regeneration during the regeneration process.

  16. pH-dependent growth of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Dutta, Joydeep

    2009-04-01

    Here we study the effect of pH variation on the dimension and morphology of zinc oxide (ZnO) nanorods grown through hydrothermal process at temperatures less than 100 °C. ZnO nanorods were grown on pre-seeded glass substrates using zinc nitrate hexahydrate as the source of Zn ions and hexamethylenetetramine as the source of hydroxyl ions. The pH of the reaction bath was found to change gradually from 6.4 to 7.3 in 5 h during the growth process. The growth of the ZnO nanorods was observed to be faster, both laterally and longitudinally, when the growth solution was in basic conditions. However, flower petal like ZnO nanostructures were obtained when the growth process was initiated in basic condition (pH 8-12), indicating that initial acidic conditions were required to obtain nanorods with well-defined hexagonal facets. ZnO is known to erode in acidic condition and the final dimension of the nanorods is determined by a competition between crystal growth and etching. ZnO nanorods of different dimensions, both laterally (diameters ranging from 220 nm to 1 μm) and longitudinally (lengths ranging from 1 to 5.6 μm) were successfully synthesized using the same concentration of zinc nitrate and hexamine in the reaction bath and the same growth duration of 5 h simply through appropriate control of the pH of the reactant solution between 6 and 7.3.

  17. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  18. Oxidation kinetics of zinc sulfide: determination of intrinsic rate constant

    SciTech Connect

    Prabhu, G.M.

    1983-06-01

    An initial reaction rate study was done with the help of a thermogravimetric technique. Energy dispersive x-ray analyses on partially oxidized zinc sulfide pellets with a sintered porosity of 72.4% indicated flat sulfur intensity profiles within pellets reacted below 560/sup 0/C, which suggested a homogeneous reaction mechanism. Therefore, reaction temperatures below 600/sup 0/C were chosen for the reaction rate studies. Initial reaction rate studies on 72.4, 58.2, and 34.0% porous, cylindrical zinc sulfide pellets and the corresponding Arrhenius plot suggested chemical control in the temperature range from 480 to 565/sup 0/C. The corresponding intrinsic rate constant is correlated as k = 3.45 x 10/sup 17/ exp (- 86051/RT) cm/s. The variation in sulfur intensity within sintered pellets having a porosity of 72.4% that were reacted at temperatures above 560/sup 0/C indicated that the pore diffusion resistance gradually became comparable to the chemical reaction resistance leading to a mixed control mechanism above 570/sup 0/C. The critical temperature at which this shift occurred, increased with pellet porosity.

  19. Poly(vinylidene fluoride)/zinc oxide smart composite material

    NASA Astrophysics Data System (ADS)

    Öğüt, Erdem; Yördem, O. Sinan; Menceloğlu, Yusuf Z.; Papila, Melih

    2007-04-01

    This work aimed at fabrication and electromechanical characterization of a smart material system composed of electroactive polymer and ceramic materials. The idea of composite material system is on account of complementary characteristics of the polymer and ceramic for flexibility and piezoelectric activity. Our preliminary work included Polyvinylidene Fluoride (PVDF) as the flexible piezoelectric polymer, and Zinc Oxide (ZnO) as the piezoelectric ceramic brittle, but capable to respond strains without poling. Two alternative processes were investigated. The first process makes use of ZnO fibrous formation achieved by sintering PVA/zinc acetate precursor fibers via electrospinning. Highly brittle fibrous ZnO mat was dipped into a PVDF polymer solution and then pressed to form pellets. The second process employed commercial ZnO nanopowder material. The powder was mixed into a PVDF/acetone polymer solution, and the resultant paste was pressed to form pellets. The free standing composite pellets with electrodes on the top and bottom surfaces were then subjected to sinusoidal electric excitation and response was recorded using a fotonic sensor. An earlier work on electrospun PVDF fiber mats was also summarized here and the electromechanical characterization is reported.

  20. Nano-rods of zinc oxide in nano-graphene

    NASA Astrophysics Data System (ADS)

    Ortiz, Pedro; Chavira, Elizabeth; Monroy, Marel; Elizalde, José; Santiago, Patricia; Sato, Roberto; Tejeda, Adriana; González, Guillermina; Novelo, Omar; Flores, Carlos

    2014-03-01

    It's of great interest to study the devices based on nano-ZnO and graphene, for their electromagnetic and optical properties to increase the efficiency of solar cells. The graphene multilayers synthesis was done by mechanosynthesis, grinding in a mechanical agate mortar. The zinc oxide nano-rods were synthesized from zinc acetate dihydrate, Ace, (Sigma Aldrich) and ethylene diamine, En, (Sigma Aldrich) with a 1:2 ratio of reagents En/Ace. The ZnO nano-rods in nano-tubes graphene were obtained by mechanosynthesis. The X-ray powder diffraction, shows the shift of C with PDF 12-0212 and ZnO, Zincite PDF 36-1451, both with hexagonal unit cell. The grain size and morphology of graphene (multilayers and nano-tubes), ZnO nano-rods and ZnO-graphene mixture (multilayers, nano-tubes) were observed by scanning electron microscope. Transmission electron microscope, corroborates shown in SEM. Raman spectroscopy, shows the shift of multilayer graphene and the ZnO nano-rods. In photoluminescence measurements, observe the change in intensity in the band defects. Magnetic properties characterization was carried out by Vibrating Sample Magnetometry. We conclude that graphite multilayers dislocated by cutting efforts, forming graphene nano-tubes and encapsulated ZnO nano-rods within graphene.

  1. Zinc

    MedlinePlus

    ... pill" to help remove excess water from the body. Another effect of amiloride (Midamor) is that it can increase the amount of zinc in the body. Taking zinc supplements with amiloride (Midamor) might cause ...

  2. The zinc electrode - Its behaviour in the nickel oxide-zinc accumulator

    NASA Astrophysics Data System (ADS)

    Certain aspects of zinc electrode reaction and behavior are investigated in view of their application to batteries. The properties of the zinc electrode in a battery system are discussed, emphasizing porous structure. Shape change is emphasized as the most important factor leading to limited battery cycle life. It is shown that two existing models of shape change based on electroosmosis and current distribution are unable to consistently describe observed phenomena. The first stages of electrocrystallization are studied and the surface reactions between the silver substrate and the deposited zinc layer are investigated. The reaction mechanism of zinc and amalgamated zinc in an alkaline electrolyte is addressed, and the batter system is studied to obtain information on cycling behavior and on the shape change phenomenon. The effect on cycle behavior of diferent amalgamation techniques of the zinc electrode and several additives is addressed. Impedance measurements on zinc electrodes are considered, and battery behavior is correlated with changes in the zinc electrode during cycling.

  3. Functionalization of textiles with silver and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pulit-Prociak, Jolanta; Chwastowski, Jarosław; Kucharski, Arkadiusz; Banach, Marcin

    2016-11-01

    The paper presents a method for functionalization of textile materials using fabric dyes modified with silver or zinc oxide nanoparticles. Embedding of these nanoparticles into the structure of other materials makes that the final product is characterized by antimicrobial properties. Indigo and commercially available dye were involved in studies. It is worth to note that silver nanoparticles were obtained in-situ in the reaction of preparing indigo dye and in the process of preparing commercial dye baths. Such a method allows reducing technological steps. The modified dyes were used for dyeing of cotton fibers. The antimicrobial properties of final textile materials were studied. Saccharomyces cerevisiae strain was used in microbiological test. The results confirmed biocidal activity of prepared materials.

  4. Green Approach for Fabrication and Applications of Zinc Oxide Nanoparticles

    PubMed Central

    Smita, Kumari; Cumbal, Luis

    2014-01-01

    Zinc oxide nanoparticles (ZnO-NPs) are known to be one of the multifunctional inorganic compounds which are widely used in everyday applications. This study aims to fabricate ZnO-NPs using grapefruit (Citrus paradisi) peel extract with particle size ranging from 12 to 72 nm. Structural, morphological, and optical properties of the synthesized nanoparticles have been characterized by using UV-Vis spectrophotometer, TEM, DLS, and FTIR analysis. They show the significant photocatalytic degradation efficiency (>56%, 10 mg/L, 6 h) against methylene blue and antioxidant efficacy (≥80% for 1.2 mM) against 1,1-diphenyl-2-picrylhydrazyl. From the results obtained it is suggested that green ZnO-NPs could be used effectively in environmental safety applications and also can address future medical concerns. PMID:25374484

  5. Interpretation of optical conductivity of zinc oxide nanowires

    SciTech Connect

    Choudhary, K. K.; Kaurav, N.

    2015-07-31

    The frequency dependent optical response of Zinc Oxide (ZnO) nanowires is theoretically analyzed within the two component schemes: one is the motion of coherent Drude electrons within the ZnO nanowire and the other is incoherent motion of electrons from one nanowire to other. The model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions. The coherent Drude carriers form a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared region. However, the hopping of carriers from one nanowire to other (incoherent motion of electrons) yields a peak value in the optical conductivity around mid infrared region. It is found that both the Drude and hopping carriers will contribute to the optical process of conduction in ZnO nanowire.

  6. Gas sensing performance of nano zinc oxide sensors

    NASA Astrophysics Data System (ADS)

    Sharma, Shiva; Chauhan, Pratima

    2016-04-01

    We report nano Zinc Oxide (ZnO) synthesized by sol-gel method possessing the crystallite size which varies from 25.17 nm to 47.27 nm. The Scanning electron microscope (SEM) image confirms the uniform distribution of nanograins with high porosity. The Energy dispersion X-ray (EDAX) spectrum gives the atomic composition of Zn and O in ZnO powders and confirms the formation of nano ZnO particles. These factors reveals that Nano ZnO based gas sensors are highly sensitive to Ammonia gas (NH3) at room temperature, indicating the maximum response 86.8% at 800 ppm with fast response time and recovery time of 36 sec and 23 sec respectively.

  7. Phytofabrication of bioinspired zinc oxide nanocrystals for biomedical application.

    PubMed

    Velmurugan, Palanivel; Park, Jung-Hee; Lee, Sang-Myeong; Jang, Jum-Suk; Yi, Young-Joo; Han, Sang-Sub; Lee, Sang-Hyun; Cho, Kwang-Min; Cho, Min; Oh, Byung-Taek

    2016-09-01

    In the present study, we investigated a novel green route for synthesis of zinc oxide nanoparticles (ZnO NPs) using the extract of young cones of Pinus densiflora as a reducing agent. Standard characterization studies were carried out to confirm the obtained product using UV-Vis spectra, SEM-EDS, FTIR, and XRD. TEM images showed that various shapes of ZnO NPs were synthesized, including hexagonal (wurtzite), triangular, spherical, and oval-shaped particles, with average sizes between 10 and 100 nm. The synthesized ZnO NPs blended with the young pine cone extract have very good activity against bacterial and fungal pathogens, similar to that of commercial ZnO NPs.

  8. Stability of zinc oxide nanofluids prepared with aggregated nanocrystalline powders.

    PubMed

    Leonard, J P; Chung, S J; Nettleship, I; Soong, Y; Martello, D V; Chyu, M K

    2008-12-01

    Aqueous zinc oxide (ZnO) suspensions were prepared using a two-step preparation method in which an aggregated nanocrystalline ZnO powder was dispersed in water using a polyelectrolyte. The fluid showed anomalously high thermal conductivity when compared with the Maxwell and Hamilton-Crosser predictions. However, analysis of the particle size distribution showed that the fluid contained aggregated 20 nm crystallites of ZnO with a high volume fraction of particles larger than 100 nm. Sedimentation experiments revealed that particles settled out of the stationary fluid over times ranging from 0.1 hours to well over 10,000 hours. The size of the particles remaining in suspension agreed well with predictions made using Stoke's law, suggesting flocculation was not occurring in the fluids. Finally, a new concept of nanofluid stability is introduced based on the height of the fluid, sedimentation, Brownian motion and the kinetic energy of the particles.

  9. Gold coated zinc oxide nanonecklaces as a SERS substrate.

    PubMed

    He, Lili; Shi, Jian; Sun, Xin; Lin, Mengshi; Yu, Ping; Li, Hao

    2011-04-01

    Faceted zinc oxide nanonecklace (ZnO NN) arrays were grown on r-plane sapphires along one direction (ZnO [0001] II sapphire [10-11] and ZnO (-12-10) II sapphire (01-12)) using chemical vapor deposition. After coated with 45 nm gold films and annealed at 250 degrees C for 30 seconds, the coated ZnO NNs exhibit satisfactory and stable surface enhanced Raman scattering (SERS) effects when tested with melamine and other chemicals. The limit of detection of melamine is 10(-5) mol/L and the analytical enhancement factor is 10(4), which is competitive to a commercial substrate. This study indicates that gold coated ZnO NN substrates have a great potential as SERS-active substrates in rapid detection of trace amount food contaminants such as melamine and other chemicals.

  10. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    NASA Astrophysics Data System (ADS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-01

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  11. Zinc oxide tetrapods as efficient photocatalysts for organic pollutant degradation

    NASA Astrophysics Data System (ADS)

    Liu, Fangzhou; Leung, Yu Hang; Djurisić, Aleksandra B.; Liao, Changzhong; Shih, Kaimin

    2014-03-01

    Bisphenol A (BPA) and other organic pollutants from industrial wastewater have drawn increasing concern in the past decades regarding their environmental and biological risks, and hence developing strategies of effective degradation of BPA and other organic pollutants is imperative. Metal oxide nanostructures, in particular titanium oxide (TiO2) and zinc oxide (ZnO), have been demonstrated to exhibit efficient photodegradation of various common organic dyes. ZnO tetrapods are of special interest due to their low density of native defects which consequently lead to lower recombination losses and higher photocatalytic efficiency. Tetrapods can be obtained by relatively simple and low-cost vapor phase deposition in large quantity; the micron-scale size would also be advantageous for catalyst recovery. In this study, the photodegradation of BPA with ZnO tetrapods and TiO2 nanostructures under UV illumination were compared. The concentration of BPA dissolved in DI water was analyzed by high-performance liquid chromatography (HPLC) at specified time intervals. It was observed that the photocatalytic efficiency of ZnO tetrapods eventually surpassed Degussa P25 in free-standing form, and more than 80% of BPA was degraded after 60 min. Photodegradation of other organic dye pollutants by tetrapods and P25 were also examined. The superior photocatalytic efficiency of ZnO tetrapods for degradation of BPA and other organic dye pollutants and its correlation with the material properties were discussed.

  12. Fabrication and characterization of zinc oxide based rib waveguide

    NASA Astrophysics Data System (ADS)

    Gioffrè, M.; Gagliardi, M.; Casalino, M.; Coppola, G.; Iodice, M.; Della Corte, F.

    2007-02-01

    In this work we investigate the possibility to use Zinc Oxide (ZnO) thin films, deposited by RF magnetron sputtering, for the realization of integrated optical structures working at 1550 nm. Structural properties of sputtered zinc oxide thin films were studied by means of X-ray Diffraction (XRD) measurements, while optical properties were investigated by spectrophotometry and Spectroscopic Ellipsometry (SE). In particular, ellipsometric measurements allowed to determine the dispersion law of the ZnO complex refractive index (see manuscript) = n - jk through the multilayer modeling using Tauc-Lorentz (TL) dispersion model. We have found a preferential c-axis growth of ZnO films, with slightly variable deposition rates from 2.5 to 3.8 Å/s. Conversely, the refractive index exhibits, from UV to near IR, a considerable and almost linear variation when the oxygen flux value in the deposition chamber varies from 0 to 10 sccm. In order to realize a waveguide structure, a 3-μm-thick ZnO film was deposited onto silicon single crystal substrates, where a 0.5-μm-thick thermal SiO II buffer layer was previously realized, acting as lower cladding. Dry and wet chemical etching processes have been investigated to achieve controllable etching rate and step etching profile, with the aim to realize an optical rib waveguide. The etched surfaces were inspected using scanning electron microscopy (SEM) and optical microscopy. Moreover, we carried out the experimental measurements of the fringes pattern and Free Spectral Range (FSR) of an integrated Fabry- Perot etalon, obtained by cleaving of a single mode rib waveguide.

  13. Prenatal development toxicity study of zinc oxide nanoparticles in rats

    PubMed Central

    Hong, Jeong-Sup; Park, Myeong-Kyu; Kim, Min-Seok; Lim, Jeong-Hyeon; Park, Gil-Jong; Maeng, Eun-Ho; Shin, Jae-Ho; Kim, Meyoung-Kon; Jeong, Jayoung; Park, Jin-A; Kim, Jong-Choon; Shin, Ho-Chul

    2014-01-01

    This study investigated the potential adverse effects of zinc oxide nanoparticles ([ZnOSM20(+) NPs] zinc oxide nanoparticles, positively charged, 20 nm) on pregnant dams and embryo–fetal development after maternal exposure over the period of gestational days 5–19 with Sprague-Dawley rats. ZnOSM20(+) NPs were administered to pregnant rats by gavage at 0, 100, 200, and 400 mg/kg/day. All dams were subjected to a cesarean section on gestational day 20, and all of the fetuses were examined for external, visceral, and skeletal alterations. Toxicity in the dams manifested as significantly decreased body weight after administration of 400 mg/kg/day NPs; reduced food consumption after administration of 200 and 400 mg/kg/day NPs; and decreased liver weight and increased adrenal glands weight after administration of 400 mg/kg/day NPs. However, no treatment-related difference in: number of corpora lutea; number of implantation sites; implantation rate (%); resorption; dead fetuses; litter size; fetal deaths and placental weights; and sex ratio were observed between the groups. On the other hand, significant decreases between treatment groups and controls were seen for fetal weights after administration of 400 mg/kg/day NPs. Morphological examinations of the fetuses demonstrated significant differences in incidences of abnormalities in the group administered 400mg/kg/day. Meanwhile, no significant difference was found in the Zn content of fetal tissue between the control and high-dose groups. These results showed that oral doses for the study with 15-days repeated of ZnOSM20(+) NPs were maternotoxic in the 200 mg/kg/day group, and embryotoxic in the 400 mg/kg/day group. PMID:25565834

  14. First-principles study of native point defects in crystalline indium gallium zinc oxide

    NASA Astrophysics Data System (ADS)

    Omura, Hideyuki; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2009-05-01

    Materials in In-Ga-Zn-O system are promising candidates for channel layers of high-performance thin-film transistors (TFTs). We investigated the atomic arrangements and the electronic structures of crystalline InGaZnO4 containing point defects such as oxygen vacancy (VO), interstitial hydrogen (Hi), and interstitial oxygen (Oi) by density functional theory (DFT) using a plane-wave pseudopotential method. The calculations for the atomic structure relaxation suggest that Hi bonds to a lattice oxygen (OO), and Oi occupies a split interstitial site [Oi(split)] forming a chemical bond with OO which is similar to O2 molecule, or Oi occupies an octahedral interstitial site [Oi(oct)]. The electronic structure calculations reveal that VO forms fully occupied states around the middle of the DFT band gap, while Hi does not form a defect level in the band gap but raises the Fermi level above the conduction band minimum. Oi(split) forms fully occupied states above the valence band maximum of the defect-free model (VBM0), while Oi(oct) forms both occupied and unoccupied states above the VBM0. It is thus suggested that VO and Oi(split) are electrically inactive for electrons but work as hole traps, Hi acts as a donor, and Oi(oct) is electrically active, trapping both electrons and holes. These observations imply that VO and Oi(split) do not but Hi and Oi(oct) influence electrical properties of the n-channel TFTs based on the In-Ga-Zn-O semiconductor materials.

  15. Near Field Imaging of Charge Transport in Gallium Nitride and Zinc Oxide Nanostructures

    DTIC Science & Technology

    2010-12-01

    their work is clear: research into nanostructures may one day result in significantly more efficient solar cells capable of producing energy at the...devices have enhanced the lives of people worldwide. Computers, televisions, telephones, the Internet, cellular phones, radios, solar cells , as...detector is a silicon avalanche photodiode (APD) that can detect wavelengths of light from 400 nm to 1060 nm with a peak quantum efficiency of 65

  16. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    PubMed Central

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-01-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

  17. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  18. Fabrication and characterization of zinc oxide and gallium nitride based sensors

    NASA Astrophysics Data System (ADS)

    Wang, Hung-Ta

    Pt-coated ZnO nanorods show a decrease of 8% resistance upon exposure to 500 ppm hydrogen in room temperature. This is a factor of two larger than that obtained with Pd; approximately 95% of the initial ZnO conductance was recovered within 20 s by exposing the nanorods to O2. This rapid and easy recoverability makes the ZnO nanorods suitable for ppm-level sensing at room temperature with low power consumption. Pt-gated AlGaN/GaN based high electron mobility transistors (HEMTs) showed that Schottky diode operation provides large relative sensitivity over a narrow range around turn-on voltage; the differential designed Schottky diodes with AlGaN/GaN hetero-structure was shown to provide robust detection of 1% H 2 in air at 25°C, which remove false alarms from ambient temperature variations; moreover, the use of TiB2-based Ohmic contacts on Pt-Schottky contacted AlGaN/GaN based hydrogen sensing diodes was shown to provide more stable operation. Thioglycolic acid functionalized Au-gated AlGaN/GaN based HEMTs were used to detect mercury (II) ions. A fast detection (>5 seconds) was achieved. This is the shortest response ever reported. The sensors were able to detect mercury (II) ion concentration as low as 10-7 M. The sensors showed an excellent sensing selectivity of more than 100 of detecting mercury ions over sodium, magnesium, and lead ions, but not copper. AlGaN/GaN based HEMTs were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The HEMT gate region was coated with KIM-1 antibodies and the HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline (PBS) solution. The limit of detection (LOD) was 1ng/ml using a 20 mum x50 mum gate sensing area. This approach shows a potential for both preclinical and clinical disease diagnosis with accurate, rapid, noninvasive, and high throughput capabilities. The rest of this dissertation includes ZnO band edge electroluminescence from N+-implanted ZnO bulk, and the investigation of cryogenic gold Schottky contact on GaAs for enhancing device thermal stability.

  19. Different shades of oxide: from nanoscale wetting mechanisms to contact printing of gallium-based liquid metals.

    PubMed

    Doudrick, Kyle; Liu, Shanliangzi; Mutunga, Eva M; Klein, Kate L; Damle, Viraj; Varanasi, Kripa K; Rykaczewski, Konrad

    2014-06-17

    Gallium-based liquid metals are of interest for a variety of applications including flexible electronics, soft robotics, and biomedical devices. Still, nano- to microscale device fabrication with these materials is challenging because, despite having surface tension 10 times higher than water, they strongly adhere to a majority of substrates. This unusually high adhesion is attributed to the formation of a thin oxide shell; however, its role in the adhesion process has not yet been established. In this work, we demonstrate that, dependent on dynamics of formation and resulting morphology of the liquid metal-substrate interface, GaInSn adhesion can occur in two modes. The first mode occurs when the oxide shell is not ruptured as it makes contact with the substrate. Because of the nanoscale topology of the oxide surface, this mode results in minimal adhesion between the liquid metal and most solids, regardless of substrate's surface energy or texture. In the second mode, the formation of the GaInSn-substrate interface involves rupturing of the original oxide skin and formation of a composite interface that includes contact between the substrate and pieces of old oxide, bare liquid metal, and new oxide. We demonstrate that in this latter mode GaInSn adhesion is dominated by the intimate contact between new oxide and substrate. We also show that by varying the pinned contact line length using varied degrees of surface texturing, the adhesion of GaInSn in this mode can be either decreased or increased. Lastly, we demonstrate how these two adhesion modes limit microcontact printing of GaInSn patterns but can be exploited to repeatedly print individual sub-200 nm liquid metal drops.

  20. Effect of morphology and solvent on two-photon absorption of nano zinc oxide

    SciTech Connect

    Kavitha, M.K.; Haripadmam, P.C.; Gopinath, Pramod; Krishnan, Bindu; John, Honey

    2013-05-15

    Highlights: ► ZnO nanospheres and triangular structures synthesis by novel precipitation technique. ► The effect of precursor concentration on the size and shape of nano ZnO. ► Open aperture Z-scan measurements of the ZnO nanoparticle dispersions. ► Nanospheres exhibit higher two photon absorption coefficient than triangular nanostructures. ► Nanospheres dispersed in water exhibit higher two photon absorption coefficient than its dispersion in 2-propanol. - Abstract: In this paper, we report the effect of morphology and solvent on the two-photon absorption of nano zinc oxide. Zinc oxide nanoparticles in two different morphologies like nanospheres and triangular nanostructures are synthesized by novel precipitation technique and their two-photon absorption coefficient is measured using open aperture Z-scan technique. Experimental results show that the zinc oxide nanospheres exhibit higher two-photon absorption coefficient than the zinc oxide triangular nanostructures. The zinc oxide nanospheres dispersed in water exhibit higher two-photon absorption coefficient than that of its dispersion in 2-propanol. The zinc oxide nanospheres dispersed in water shows a decrease in two-photon absorption coefficient with an increase in on-axis irradiance. The result confirms the dependence of shape and solvent on the two-photon absorption of nano zinc oxide.

  1. Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

    2016-01-01

    In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm2 V-1 s-1 and 2.8×1017 cm-3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274-0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

  2. Texture and Topography Analysis of Doxycycline Hyclate Thermosensitive Systems Comprising Zinc Oxide

    PubMed Central

    Phaechamud, T.; Mahadlek, J.; Charoenteeraboon, J.

    2013-01-01

    To characterize the thermal behavior and texture analysis of doxycycline hyclate thermosensitive gels developed for periodontitis treatment containing zinc oxide prepared by using poloxamer (Lutrol® F127) as polymeric material and N-methyl pyrrolidone was used as cosolvent. The thermosensitive gel comprising doxycycline hyclate, Lutrol® F127, and N-methyl pyrrolidone were characterized for the thermal behavior and texture analysis. The topography of the system after the dissolution test was characterized with scanning electron microscope. Differential scanning calorimetric thermogram exhibited the endothermic peaks in the systems containing high amount of N-methyl pyrrolidone in solvent. The sol-gel transition temperature of the systems decreased as the zinc oxide amount was increased. The addition of doxycycline hyclate, zinc oxide, and N-methyl pyrrolidone affected the syringeability of systems. The addition of zinc oxide into the doxycycline hyclate-Lutrol® F127 systems decreased the diameter of inhibition zone against Staphylococcus aureus, Escherichia coli, and Candida albicans since zinc oxide decreased the diffusion and prolonged release of doxycycline hyclate. From scanning electron microscope analysis, the porous surface of 20% w/w Lutrol® F127 system was notably different from that of gel comprising doxycycline hyclate which had interconnected pores and smooth surfaces. The number of pores was decreased with increasing zinc oxide and the porous structure was smaller and more compact. Therefore, the addition of zinc oxide could increase the syringeability of doxycycline hyclate-Lutrol® F127 system with the temperature dependence. Zinc oxide decreased inhibition zone against test microbes because of prolongation of doxycycline hyclate release and reduced size of continuous cells. Furthermore, zinc oxide also increased the compactness of wall surfaces of Lutrol® F127. PMID:24302791

  3. Physiologically based pharmacokinetic modeling of zinc oxide nanoparticles and zinc nitrate in mice

    PubMed Central

    Chen, Wei-Yu; Cheng, Yi-Hsien; Hsieh, Nan-Hung; Wu, Bo-Chun; Chou, Wei-Chun; Ho, Chia-Chi; Chen, Jen-Kun; Liao, Chung-Min; Lin, Pinpin

    2015-01-01

    Zinc oxide nanoparticles (ZnO NPs) have been widely used in consumer products, therapeutic agents, and drug delivery systems. However, the fate and behavior of ZnO NPs in living organisms are not well described. The purpose of this study was to develop a physiologically based pharmacokinetic model to describe the dynamic interactions of 65ZnO NPs in mice. We estimated key physicochemical parameters of partition coefficients and excretion or elimination rates, based on our previously published data quantifying the biodistributions of 10 nm and 71 nm 65ZnO NPs and zinc nitrate (65Zn(NO3)2) in various mice tissues. The time-dependent partition coefficients and excretion or elimination rates were used to construct our physiologically based pharmacokinetic model. In general, tissue partition coefficients of 65ZnO NPs were greater than those of 65Zn(NO3)2, particularly the lung partition coefficient of 10 nm 65ZnO NPs. Sensitivity analysis revealed that 71 nm 65ZnO NPs and 65Zn(NO3)2 were sensitive to excretion and elimination rates in the liver and gastrointestinal tract. Although the partition coefficient of the brain was relative low, it increased time-dependently for 65ZnO NPs and 65Zn(NO3)2. The simulation of 65Zn(NO3)2 was well fitted with the experimental data. However, replacing partition coefficients of 65ZnO NPs with those of 65Zn(NO3)2 after day 7 greatly improved the fitness of simulation, suggesting that ZnO NPs might decompose to zinc ion after day 7. In this study, we successfully established a potentially predictive dynamic model for slowly decomposed NPs. More caution is suggested for exposure to 65ZnO NPs <10 nm because those small 65ZnO NPs tend to accumulate in the body for a relatively longer time than 71 nm 65ZnO NPs and 65Zn(NO3)2 do. PMID:26491297

  4. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    NASA Astrophysics Data System (ADS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei, Wei; Jin, Chunming; Narayan, Roger J.

    2009-03-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices.

  5. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  6. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  7. Influence Of pH On The Transport Of Nanoscale Zinc Oxide In Saturated Porous Media

    EPA Science Inventory

    Widespread use of nanoscale zinc oxide (nZnO) in various fields causes subsurface environment contamination. Even though the transport of dissolved zinc ions in subsurface environments such as soils and sediments has been widely studied, the transport mechanism of nZnO in such e...

  8. Bioavailability of zinc oxide added to corn tortilla is similar to that of zinc sulfate and is not affected by simultaneous addition of iron

    PubMed Central

    Rosado, Jorge L.; Díaz, Margarita; Muñoz, Elsa; Westcott, Jamie L.; González, Karla E.; Krebs, Nancy F.; Caamaño, María C.; Hambidge, Michael

    2013-01-01

    Background Corn tortilla is the staple food of Mexico and its fortification with zinc, iron, and other micronutrients is intended to reduce micronutrient deficiencies. However, no studies have been performed to determine the relative amount of zinc absorbed from the fortified product and whether zinc absorption is affected by the simultaneous addition of iron. Objective To compare zinc absorption from corn tortilla fortified with zinc oxide versus zinc sulfate and to determine the effect of simultaneous addition of two doses of iron on zinc bioavailability. Methods A randomized, double-blind, crossover design was carried out in two phases. In the first phase, 10 adult women received corn tortillas with either 20 mg/kg of zinc oxide added, 20 mg/kg of zinc sulfate added, or no zinc added. In the second phase, 10 adult women received corn tortilla with 20 mg/kg of zinc oxide added and either with no iron added or with iron added at one of two different levels. Zinc absorption was measured by the stable isotope method. Results The mean (± SEM) fractional zinc absorption from unfortified tortilla, tortilla fortified with zinc oxide, and tortilla fortified with zinc sulfate did not differ among treatments: 0.35 ± 0.07, 0.36 ± 0.05, and 0.37 ± 0.07, respectively. The three treatment groups with 0, 30, and 60 mg/kg of added iron had similar fractional zinc absorption (0.32 ± 0.04, 0.33 ± 0.02, and 0.32 ± 0.05, respectively) and similar amounts of zinc absorbed (4.8 ± 0.7, 4.5 ± 0.3, and 4.8 ± 0.7 mg/day, respectively). Conclusions Since zinc oxide is more stable and less expensive and was absorbed equally as well as zinc sulfate, we suggest its use for corn tortilla fortification. Simultaneous addition of zinc and iron to corn tortilla does not modify zinc bioavailability at iron doses of 30 and 60 mg/kg of corn flour. PMID:23424892

  9. Phosphate-enhanced cytotoxicity of zinc oxide nanoparticles and agglomerates.

    PubMed

    Everett, W Neil; Chern, Christina; Sun, Dazhi; McMahon, Rebecca E; Zhang, Xi; Chen, Wei-Jung A; Hahn, Mariah S; Sue, H-J

    2014-02-10

    Zinc oxide (ZnO) nanoparticles (NPs) have been found to readily react with phosphate ions to form zinc phosphate (Zn3(PO4)2) crystallites. Because phosphates are ubiquitous in physiological fluids as well as waste water streams, it is important to examine the potential effects that the formation of Zn3(PO4)2 crystallites may have on cell viability. Thus, the cytotoxic response of NIH/3T3 fibroblast cells was assessed following 24h of exposure to ZnO NPs suspended in media with and without the standard phosphate salt supplement. Both particle dosage and size have been shown to impact the cytotoxic effects of ZnO NPs, so doses ranging from 5 to 50 μg/mL were examined and agglomerate size effects were investigated by using the bioinert amphiphilic polymer polyvinylpyrrolidone (PVP) to generate water-soluble ZnO ranging from individually dispersed 4 nm NPs up to micron-sized agglomerates. Cell metabolic activity measures indicated that the presence of phosphate in the suspension media can led to significantly reduced cell viability at all agglomerate sizes and at lower ZnO dosages. In addition, a reduction in cell viability was observed when agglomerate size was decreased, but only in the phosphate-containing media. These metabolic activity results were reflected in separate measures of cell death via the lactate dehydrogenase assay. Our results suggest that, while higher doses of water-soluble ZnO NPs are cytotoxic, the presence of phosphates in the surrounding fluid can lead to significantly elevated levels of cell death at lower ZnO NP doses. Moreover, the extent of this death can potentially be modulated or offset by tuning the agglomerate size. These findings underscore the importance of understanding how nanoscale materials can interact with the components of surrounding fluids so that potential adverse effects of such interactions can be controlled.

  10. Hybridization of Zinc Oxide Tetrapods for Selective Gas Sensing Applications.

    PubMed

    Lupan, O; Postica, V; Gröttrup, J; Mishra, A K; de Leeuw, N H; Carreira, J F C; Rodrigues, J; Ben Sedrine, N; Correia, M R; Monteiro, T; Cretu, V; Tiginyanu, I; Smazna, D; Mishra, Y K; Adelung, R

    2017-02-01

    In this work, the exceptionally improved sensing capability of highly porous three-dimensional (3-D) hybrid ceramic networks toward reducing gases is demonstrated for the first time. The 3-D hybrid ceramic networks are based on doped metal oxides (MexOy and ZnxMe1-xOy, Me = Fe, Cu, Al) and alloyed zinc oxide tetrapods (ZnO-T) forming numerous junctions and heterojunctions. A change in morphology of the samples and formation of different complex microstructures is achieved by mixing the metallic (Fe, Cu, Al) microparticles with ZnO-T grown by the flame transport synthesis (FTS) in different weight ratios (ZnO-T:Me, e.g., 20:1) followed by subsequent thermal annealing in air. The gas sensing studies reveal the possibility to control and change/tune the selectivity of the materials, depending on the elemental content ratio and the type of added metal oxide in the 3-D ZnO-T hybrid networks. While pristine ZnO-T networks showed a good response to H2 gas, a change/tune in selectivity to ethanol vapor with a decrease in optimal operating temperature was observed in the networks hybridized with Fe-oxide and Cu-oxide. In the case of hybridization with ZnAl2O4, an improvement of H2 gas response (to ∼7.5) was reached at lower doping concentrations (20:1), whereas the increase in concentration of ZnAl2O4 (ZnO-T:Al, 10:1), the selectivity changes to methane CH4 gas (response is about 28). Selectivity tuning to different gases is attributed to the catalytic properties of the metal oxides after hybridization, while the gas sensitivity improvement is mainly associated with additional modulation of the electrical resistance by the built-in potential barriers between n-n and n-p heterojunctions, during adsorption and desorption of gaseous species. Density functional theory based calculations provided the mechanistic insights into the interactions between different hybrid networks and gas molecules to support the experimentally observed results. The studied networked materials and

  11. Zinc poisoning

    MedlinePlus

    ... other materials to make industrial items such as paint, dyes, and more. These combination substances can be ... Compounds used to make paint, rubber, dyes, wood preservatives, and ... Zinc chloride Zinc oxide (relatively nonharmful) Zinc ...

  12. Development of a poly(ether urethane) system for the controlled release of two novel anti-biofilm agents based on gallium or zinc and its efficacy to prevent bacterial biofilm formation.

    PubMed

    Ma, Hongyan; Darmawan, Erica T; Zhang, Min; Zhang, Lei; Bryers, James D

    2013-12-28

    Traditional antibiotic therapy to control medical device-based infections typically fails to clear biofilm infections and may even promote the evolution of antibiotic resistant species. We report here the development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin IX (PP) or mesoprotoporphyrin IX (MP) that are both highly effective in negating suspended bacterial growth and biofilm formation. These chelated gallium or zinc complexes act as iron siderophore analogs, supplanting the natural iron uptake of most bacteria. Poly (ether urethane) (PEU; Biospan®) polymer films were fabricated for the controlled sustained release of the Ga- or Zn-complexes, using an incorporated pore-forming agent, poly(ethylene glycol) (PEG). An optimum formulation containing 8% PEG (MW=1450) in the PEU polymer effectively sustained drug release for at least 3months. All drug-loaded PEU films exhibited in vitro ≥ 90% reduction of Gram-positive (Staphylococcus epidermidis) and Gram-negative (Pseudomonas aeruginosa) bacteria in both suspended and biofilm culture versus the negative control PEU films releasing nothing. Cytotoxicity and endotoxin evaluation demonstrated no adverse responses to the Ga- or Zn-complex releasing PEU films. Finally, in vivo studies further substantiate the anti-biofilm efficacy of the PEU films releasing Ga- or Zn- complexes.

  13. Hydrothermal synthesis of zinc oxide nanoparticles using rice as soft biotemplate

    PubMed Central

    2013-01-01

    Background Rice as a renewable, abundant bio-resource with unique characteristics can be used as a bio-template to synthesize various functional nanomaterials. Therefore, the effect of uncooked rice flour as bio-template on physico-chemical properties, especially the morphology of zinc oxide nanostructures was investigated in this study. The ZnO particles were synthesized through hydrothermal-biotemplate method using zinc acetate-sodium hydroxide and uncooked rice flour at various ratios as precursors at 120°C for 18 hours. Results The results indicate that rice as a bio-template can be used to modify the shape and size of zinc oxide particles. Different morphologies, namely flake-, flower-, rose-, star- and rod-like structures were obtained with particle size at micro- and nanometer range. Pore size and texture of the resulting zinc oxide particles were found to be template-dependent and the resulting specific surface area enhanced compared to the zinc oxide synthesized without rice under the same conditions. However, optical property particularly the band gap energy is generally quite similar. Conclusion Pure zinc oxide crystals were successfully synthesized using rice flour as biotemplate at various ratios of zinc salt to rice. The size- and shape-controlled capability of rice to assemble the ZnO particles can be employed for further useful practical applications. PMID:23919386

  14. Fabrication of Vertically Aligned Carbon Nanotube or Zinc Oxide Nanorod Arrays for Optical Diffraction Gratings.

    PubMed

    Kim, Jeong; Kim, Sun Il; Cho, Seong-Ho; Hwang, Sungwoo; Lee, Young Hee; Hur, Jaehyun

    2015-11-01

    We report on new fabrication methods for a transparent, hierarchical, and patterned electrode comprised of either carbon nanotubes or zinc oxide nanorods. Vertically aligned carbon nanotubes or zinc oxide nanorod arrays were fabricated by either chemical vapor deposition or hydrothermal growth, in combination with photolithography. A transparent conductive graphene layer or zinc oxide seed layer was employed as the transparent electrode. On the patterned surface defined using photoresist, the vertically grown carbon nanotubes or zinc oxides could produce a concentrated electric field under applied DC voltage. This periodic electric field was used to align liquid crystal molecules in localized areas within the optical cell, effectively modulating the refractive index. Depending on the material and morphology of these patterned electrodes, the diffraction efficiency presented different behavior. From this study, we established the relationship between the hierarchical structure of the different electrodes and their efficiency for modulating the refractive index. We believe that this study will pave a new path for future optoelectronic applications.

  15. Ordered Nucleation Sites for the Growth of Zinc Oxide Nanofibers

    SciTech Connect

    Wang, J.; Ginley, D.S.; Shaheen, S.

    2006-01-01

    Organic photovoltaics (OPVs) offer a promising route to low cost photovoltaic (PV) technology that can be inexpensively manufactured on a large scale for use in power generation and commercial products. Solar power conversion efficiencies of laboratory scale OPV devices have recently reached ~5%; however, projected efficiencies of at least 10% will be required for commercialization. An analogous approach that has arisen recently that can potentially increase efficiencies employs metal oxide semiconductors as the electron acceptor, creating a hybrid organic-inorganic device. This approach offers the advantage that the conduction band of the oxide can be tuned in a systematic way through doping, thus potentially achieving higher photovoltages in the device. Additionally, nanostructures of these materials can be easily grown from precursor solutions, providing a technique to precisely control the nanoscale geometry. This work focuses on using ZnO, which is known to have high electron mobility (>100 cm2/Vs), as the electron acceptor. Nanofibers of ZnO can be grown from precursors such as zinc acetate or zinc nitrate to form arrays of nanofibers into which a conjugated polymer can be intercalated to form a composite PV device. The morphology of the nanofiber array is critical to the performance of the device, but current methods of nanofiber growth from a flat, polycrystalline nucleation layer allow for little morphological control. To overcome this limitation, we have created ordered arrays of ZnO nucleation sites with controllable size and spacing. Toluene solutions of diblock copolymer micelles with ZnCl2 incorporated into the micellar cores were spin-coated onto glass substrates and etched with an O2 plasma to yield hexagonally ordered arrays of ZnO nanoparticles that functioned as nucleation sites. Changing the concentration of ZnCl2 and the molecular weight and ratio of the diblock copolymer resulted in systematic variation in the size and spacing of the

  16. Transport of Zinc Oxide Nanoparticles in a Simulated Gastric Environment

    NASA Astrophysics Data System (ADS)

    Mayfield, Ryan T.

    Recent years have seen a growing interest in the use of many types of nano sized materials in the consumer sector. Potential uses include encapsulation of nutrients, providing antimicrobial activity, altering texture, or changing bioavailability of nutrients. Engineered nanoparticles (ENP) possess properties that are different than larger particles made of the same constituents. Properties such as solubility, aggregation state, and toxicity can all be changed as a function of size. The gastric environment is an important area for study of engineered nanoparticles because of the varied physical, chemical, and enzymatic processes that are prevalent there. These all have the potential to alter those properties of ENP that make them different from their bulk counterparts. The Human Gastric Simulator (HGS) is an advanced in vitro model that can be used to study many facets of digestion. The HGS consists of a plastic lining that acts as the stomach cavity with two sets of U-shaped arms on belts that provide the physical forces needed to replicate peristalsis. Altering the position of the arms or changing the speed of the motor which powers them allows one to tightly hone and replicate varied digestive conditions. Gastric juice, consisting of salts, enzymes, and acid levels which replicate physiological conditions, is introduced to the cavity at a controllable rate. The release of digested food from the lumen of simulated stomach is controlled by a peristaltic pump. The goal of the HGS is to accurately and repeatedly simulate human digestion. This study focused on introducing foods spiked with zinc oxide ENP and bulk zinc oxide into the HGS and then monitoring how the concentration of each changed at two locations in the HGS over a two hour period. The two locations chosen were the highest point in the lumen of the stomach, which represented the fundus, and a point just beyond the equivalent of the pylorus, which represented the antrum of the stomach. These points were

  17. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.

    PubMed

    Ahn, Byung Du; Jeon, Hye Ji; Park, Jin-Seong

    2014-06-25

    This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH3COO)2·2H2O and/or SnCl2·2H2O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm(-1) for GaZTO:N films indicated the presence of ZnGa2O4, N-H, and N═O groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm(2) V(-1) s(-1) in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (Vth) of 0.04 V. In addition, the instability of Vth values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band.

  18. Synthesis and characterization of nanostructured zinc oxide layers for sensor applications

    SciTech Connect

    Krasteva, L. K.; Dimitrov, D. Tz.; Papazova, K. I.; Nikolaev, N. K.; Peshkova, T. V.; Moshnikov, V. A.; Gracheva, I. E. Karpova, S. S.; Kaneva, N. V.

    2013-04-15

    Fractal structures and arrays of nanowires based on zinc oxide are fabricated by two different methods, sol-gel dip-coating and chemical bath deposition combined with sol-gel synthesis. The gas-sensitive properties of the structures are analyzed. It is found that the greatest sensitivity to reducing ethanol vapor is exhibited by the structure with a lower layer in the form of an array of zinc-oxide nanowires modified by four immersions in a copper nitrate solution.

  19. A study of mercuric oxide and zinc-air battery life in hearing aids.

    PubMed

    Sparkes, C; Lacey, N K

    1997-09-01

    The requirement to phase out mercuric oxide (mercury) batteries on environmental grounds has led to the widespread introduction of zinc-air technology. The possibility arises that high drain hearing aids may not be adequately catered for by zinc-air cells, leading to poor performance. This study investigated the hearing aid user's ability to perceive differences between zinc-air and mercury cells in normal everyday usage. The data was collected for 100 experienced hearing aid users in field trials. Users report 50 per cent greater life for zinc-air cells in high power aids and 28 per cent in low power aids. The average life of the zinc-air cells range from 15 days in high power to 34 days in low power aids. Users are able to perceive a difference in sound quality in favour of zinc-air cells for low and medium power aids. The hearing aid population is not disadvantaged by phasing out mercury cells.

  20. Colloidal Synthesis of Bipolar Off-Stoichiometric Gallium Iron Oxide Spinel-Type Nanocrystals with Near-IR Plasmon Resonance.

    PubMed

    Urso, Carmine; Barawi, Mariam; Gaspari, Roberto; Sirigu, Gianluca; Kriegel, Ilka; Zavelani-Rossi, Margherita; Scotognella, Francesco; Manca, Michele; Prato, Mirko; De Trizio, Luca; Manna, Liberato

    2017-01-25

    We report the colloidal synthesis of ∼5.5 nm inverse spinel-type oxide Ga2FeO4 (GFO) nanocrystals (NCs) with control over the gallium and iron content. As recently theoretically predicted, some classes of spinel-type oxide materials can be intrinsically doped by means of structural disorder and/or change in stoichiometry. Here we show that, indeed, while stoichiometric Ga2FeO4 NCs are intrinsic small bandgap semiconductors, off-stoichiometric GFO NCs, produced under either Fe-rich or Ga-rich conditions, behave as degenerately doped semiconductors. As a consequence of the generation of free carriers, both Fe-rich and Ga-rich GFO NCs exhibit a localized surface plasmon resonance in the near-infrared at ∼1000 nm, as confirmed by our pump-probe absorption measurements. Noteworthy, the photoelectrochemical characterization of our GFO NCs reveal that the majority carriers are holes in Fe-rich samples, and electrons in Ga-rich ones, highlighting the bipolar nature of this material. The behavior of such off-stoichiometric NCs was explained by our density functional theory calculations as follows: the substitution of Ga(3+) by Fe(2+) ions, occurring in Fe-rich conditions, can generate free holes (p-type doping), while the replacement of Fe(2+) by Ga(3+) cations, taking place in Ga-rich samples, produces free electrons (n-type doping). These findings underscore the potential relevance of spinel-type oxides as p-type transparent conductive oxides and as plasmonic semiconductors.

  1. The role of intracellular zinc release in aging, oxidative stress, and Alzheimer’s disease

    PubMed Central

    McCord, Meghan C.; Aizenman, Elias

    2014-01-01

    Brain aging is marked by structural, chemical, and genetic changes leading to cognitive decline and impaired neural functioning. Further, aging itself is also a risk factor for a number of neurodegenerative disorders, most notably Alzheimer’s disease (AD). Many of the pathological changes associated with aging and aging-related disorders have been attributed in part to increased and unregulated production of reactive oxygen species (ROS) in the brain. ROS are produced as a physiological byproduct of various cellular processes, and are normally detoxified by enzymes and antioxidants to help maintain neuronal homeostasis. However, cellular injury can cause excessive ROS production, triggering a state of oxidative stress that can lead to neuronal cell death. ROS and intracellular zinc are intimately related, as ROS production can lead to oxidation of proteins that normally bind the metal, thereby causing the liberation of zinc in cytoplasmic compartments. Similarly, not only can zinc impair mitochondrial function, leading to excess ROS production, but it can also activate a variety of extra-mitochondrial ROS-generating signaling cascades. As such, numerous accounts of oxidative neuronal injury by ROS-producing sources appear to also require zinc. We suggest that zinc deregulation is a common, perhaps ubiquitous component of injurious oxidative processes in neurons. This review summarizes current findings on zinc dyshomeostasis-driven signaling cascades in oxidative stress and age-related neurodegeneration, with a focus on AD, in order to highlight the critical role of the intracellular liberation of the metal during oxidative neuronal injury. PMID:24860495

  2. Antibacterial effect of zinc oxide nanoparticles combined with ultrasound

    NASA Astrophysics Data System (ADS)

    Seil, Justin T.; Webster, Thomas J.

    2012-12-01

    Using Staphylococcus aureus (S. aureus), the present study investigated the antibacterial effect of ZnO nanoparticles both in the absence and presence of ultrasound stimulation. While the antibacterial effect of control nanoparticle chemistries (Al2O3) alone was either weak or unobservable under the conditions tested, the antibacterial effect of ZnO alone was significant, providing over a four log reduction (equivalent to antibiotics) compared to no treatment after just 8 h. The antibacterial effect was enhanced as ZnO particle diameter decreased. Specifically, when testing the antibacterial effect against bacteria populations relevant to infection, a 500 μg ml-1 dose of zinc oxide nanoparticles with a diameter of 20 nm reduced S. aureus populations by four orders of magnitude after 8 and 24 h, compared to control groups with no nanoparticles. This was accomplished without the use of antibiotics, to which bacteria are developing a resistance anyway. The addition of ultrasound stimulation further reduced the number of viable colony-forming units present in a planktonic cell suspension by 76% compared to nanoparticles alone. Lastly, this study provided a mechanism for how ZnO nanoparticles in the presence of ultrasound decrease bacteria functions by demonstrating greater hydrogen peroxide generation by S. aureus compared to controls. These results indicated that small-diameter ZnO nanoparticles exhibited strong antibacterial properties that can be additionally enhanced in the presence of ultrasound and, thus, should be further studied for a wide range of medical device anti-infection applications.

  3. Study of phosphate removal from aqueous solution by zinc oxide.

    PubMed

    Luo, Zhen; Zhu, Suiyi; Liu, Zhongmou; Liu, Jiancong; Huo, Mingxin; Yang, Wu

    2015-09-01

    Zinc oxide (ZnO) was synthesized and used to investigate the mechanism of phosphate removal from aqueous solution. ZnO particles were characterized by X-ray diffraction, scanning electron microscope and Fourier transform infrared spectroscopy before and after adsorption. Batch experiments were carried out to investigate the kinetics, isotherms, effects of initial pH and co-existing anions. The adsorption process was rapid and equilibrium was almost reached within 150 min. The adsorption kinetics were described well by a pseudo-second-order equation, and the maximum phosphate adsorption capacity was 163.4 mg/g at 298 K and pH ∼6.2±0.1. Thermodynamic analysis indicated the phosphate adsorption onto ZnO was endothermic and spontaneous. The point of zero charge of ZnO was around 8.4 according to the pH-drift method. Phosphate adsorption capacity reduced with the increasing initial solution pH values. The ligand exchange and Lewis acid-base interaction dominated the adsorption process in the lower and the higher pH range, respectively. Nitrate, sulfate and chloride ions had a negligible effect on phosphate removal, while carbonate displayed significant inhibition behavior.

  4. Querectin Alleviates Zinc Oxide Nanoreprotoxicity in Male Albino Rats.

    PubMed

    Hussein, Mohamed M A; Ali, Haytham A; Saadeldin, Islam M; Ahmed, Mona M

    2016-10-01

    Zinc oxide nanopartciles (ZnONPs) involved in advanced technologies, and their wide-scale use in consumer market makes human beings more prone to the exposure to ZnONPs. The present study was undertaken to evaluate amelioration of ZnONP-induced toxicities with querectin in male albino rats. ZnONPs-treated rats showed a significant decrease in sperm cell count, sperm motility, live and normal sperms, as well as serum testosterone level. Severe histopathological damage with a significant increase in lipid peroxidation and a decrease in antioxidant enzymes activity and the GSH level were observed in the affected testis. Relative quantitative polymerase chain reaction results showed a significant decrease in antioxidant enzymes (superoxide dismutase and catalase) and a significant decrease in 3β-HSD, 17β-HSD, and Nr5A1 transcripts. Rats-administered querectin along with ZnONPs showed less toxic effects on all studied reproductive traits and mRNA transcripts. Our results suggest that querectin is beneficial for preventing or ameliorating ZnONP reproductive toxicities in males.

  5. Synthesis of europium-doped zinc oxide micro- and nanowires

    NASA Astrophysics Data System (ADS)

    Al Rifai, S. A.; Ryabtsev, S. V.; Smirnov, M. S.; Domashevskaya, E. P.; Ivanov, O. N.

    2014-01-01

    Single crystalline Eu3+-doped wurtzite ZnO micro- and nanowires were synthesized by a chemical vapor deposition method (CVD). The nanostructures were grown by autocatalytic mechanism at walls of an alumina boat. The structure and properties of the doped ZnO is fully characterized by X-ray diffraction (XRD), energy-dispersive X-ray spectrometry (EDX), scanning and transmission electron microscopy (SEM and TEM), and photoluminescence (PL) methods. The synthesis was carried out for 10 min giving vertically aligned nanowires with mean diameter of 50-400 nm and with length of up to several microns. The nanowires were grown along ±[0001] direction. The concentration of Eu3+ dopant in the synthesized nanowires was varied from 0.7 to 0.9 at %. The crystal structure and microstructures of the doped nanomaterials were discussed and compared with undoped ZnO. The photoluminescence spectra show that emission of doped samples were shifted towards orange-red region (2.02 eV) relative to undoped zinc oxide nanostructures (2.37 eV) due to Eu3+ intraionic transitions from ZnO/Eu.

  6. Antibacterial effect of zinc oxide nanoparticles combined with ultrasound.

    PubMed

    Seil, Justin T; Webster, Thomas J

    2012-12-14

    Using Staphylococcus aureus (S. aureus), the present study investigated the antibacterial effect of ZnO nanoparticles both in the absence and presence of ultrasound stimulation. While the antibacterial effect of control nanoparticle chemistries (Al(2)O(3)) alone was either weak or unobservable under the conditions tested, the antibacterial effect of ZnO alone was significant, providing over a four log reduction (equivalent to antibiotics) compared to no treatment after just 8 h. The antibacterial effect was enhanced as ZnO particle diameter decreased. Specifically, when testing the antibacterial effect against bacteria populations relevant to infection, a 500 μg ml(-1) dose of zinc oxide nanoparticles with a diameter of 20 nm reduced S. aureus populations by four orders of magnitude after 8 and 24 h, compared to control groups with no nanoparticles. This was accomplished without the use of antibiotics, to which bacteria are developing a resistance anyway. The addition of ultrasound stimulation further reduced the number of viable colony-forming units present in a planktonic cell suspension by 76% compared to nanoparticles alone. Lastly, this study provided a mechanism for how ZnO nanoparticles in the presence of ultrasound decrease bacteria functions by demonstrating greater hydrogen peroxide generation by S. aureus compared to controls. These results indicated that small-diameter ZnO nanoparticles exhibited strong antibacterial properties that can be additionally enhanced in the presence of ultrasound and, thus, should be further studied for a wide range of medical device anti-infection applications.

  7. Zinc Oxide Coated Carbon Nanotubes for Energy Harvesting Applications

    NASA Astrophysics Data System (ADS)

    Mohney, Austin; Stollberg, David

    2012-02-01

    Small scale electrical devices depend on bulky batteries that require recharging or replacement. In biomedical monitoring, where sensors could be implanted inside the body, maintenance of batteries presents a problem. It would be beneficial if small scale devices could generate their own power and alleviate their dependence on batteries. Piezoelectric nanogenerators have proven themselves as a viable means for ambient energy harvesting. Piezoelectric materials, such as zinc oxide (ZnO), produce a voltage difference when subjected to mechanical strain. Manipulation of this voltage can allow for the storage of energy to power small scale devices. The objective of this research is to manufacture a piezo-generator that can transduce mechanical vibrations into electrical energy. Carbon nanotubes, selected for their strong, flexible, and conductive properties, are used as a structural backbone for a ZnO piezoelectric coating and a Ag electrode coating. A Schottky diode interface is used to rectify the current output of the device. The devices yielded an average current output of .79 microAmps. SEM imagining was used to characterize the fabrication process. A Keithley 2700 digital multimeter was used to characterize the current output of the devices.

  8. The calculation of band gap energy in zinc oxide films

    NASA Astrophysics Data System (ADS)

    Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said

    2015-01-01

    We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.

  9. Sonochemical approach for rapid growth of zinc oxide nanowalls

    NASA Astrophysics Data System (ADS)

    Nayak, Avinash P.; Katzenmeyer, Aaron M.; Gosho, Yasuhiro; Tekin, Bayram; Islam, M. Saif

    2012-06-01

    The sonochemical process drives chemical reactions with sound fields by creating extraordinarily high density of energy, pressure and temperatures. The process resulted in a number of unexpected chemical species and thought-provoking results in the recent past. In this paper, we present a new sonochemical approach to synthesize ZnO (zinc oxide) nanowalls (NWalls) on aluminum and alumina coated substrates at room ambient conditions. We achieved highly dense and uniform ZnO NWalls in areas that are coated with Al or Al2O3 (alumina). The synthesis process was shown not to occur on Si, SiO2, Cr, or Ag surfaces. A series of experiments on understanding the growth kinetics offers detailed insight into the growth dynamics over time. Photoluminescence (PL) measurements, UV Vis spectroscopy, and SEM-EDS results confirm NWalls composed of crystalline ZnO that are formed via Al assisted growth induced by phase transformations under extraordinary pressure, temperature, and chemical growth kinetics. The chemical growth method as reported here, is applicable to arbitrary substrates coated with an Al thin film. We demonstrate the applications of the as-formed NWalls in UV photoconductors and gas sensors.

  10. Fungus mediated biosynthesis and characterization of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Venkatesh, K. S.; Palani, N. S.; Krishnamoorthi, S. R.; Thirumal, V.; Ilangovan, R.

    2013-06-01

    Recently nanomaterials have been synthesized through biological approach due to its biocompatibility, inexpensive, eco friendly and it offers easiest experimental protocol and so on. ZnO can be potentially used in various applications. This present study reports the fungus mediated extra-cellular bio synthesis of ZnO nanorods using Fusarium Solani. The dried powder was calcined at 350°C for 1 hour in air. The thermal property of the as synthesized ZnO nanopowder was analyzed through Thermo gravimetric /Differential Thermo gravimetric (TGA / DTG) analysis. The structural and morphological properties of the calcined ZnO nanopowder were studied by XRD and SEM analysis respectively. X ray diffraction result revealed that a peak located at 2θ = 36.2° with (101) plane confirms the presence of Zinc oxide with Hexagonal crystal system. The morphology of the calcined ZnO powder was analyzed by Scanning Electron Microscopy and it clearly indicates the presence of ZnO nanorods. The diameter of the nanorods is in the range of 60 to 95 nm.

  11. Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals

    NASA Astrophysics Data System (ADS)

    Nobis, Thomas; Kaidashev, Evgeni M.; Rahm, Andreas; Lorenz, Michael; Grundmann, Marius

    The resonator properties of zinc oxide (ZnO) micro- and nanocrystals grown by a novel high pressure pulsed laser deposition process have been investigated at room temperature by cathodoluminescence (CL), spatially resolved CL-imaging and polarization resolved micro-photoluminescence (μ-PL) within the visible spectral range. The spectra exhibit a series of comparatively sharp and almost equidistant resonance lines. Using a simple plane wave interference model and taking into account the spectral characteristic n(ω) of the refractive index of ZnO, we can unambiguously attribute those lines to whispering gallery modes (WGMs) of a two dimensional hexagonal resonator. The predicted resonator diameters agree well with the measured crystal sizes. Tapered, high aspect ratio ZnO nanoneedles furthermore allow systematic investigations of the WGMs as a function of cavity diameter D down to zero. Hence, the transition from a multi-mode to a single mode cavity is directly observed. μ-PL experiments demonstrate that the WGMs are mainly TM polarized.

  12. Synthesis, characterization and catalytic application of polyhedron zinc oxide microparticles

    NASA Astrophysics Data System (ADS)

    Jamil, Saba; Ramzan Saeed Ashraf Janjua, Muhammad; Khan, Shanza Rauf; Jahan, Nazish

    2017-01-01

    Zinc oxide (ZnO) microparticles of unique morphology were synthesized by the microwave heating method. The composition and morphology of the synthesized microparticles were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). It is clear from the XRD pattern that the product is highly pure and crystalline. It is shown from the SEM images that the hexagonal unit cells are arranged in the form of a polyhedral lattice. The length of the sides is equal at the middle of the lattice, and unequal on the terminal sides of the lattice. This is due to the alignment of the hexagonal unit cells. The size distribution histogram of the product possesses a sharp band which shows that it is monodisperse. This means that a monodisperse product can be obtained by the microwave heating method. The synthesized particles were used as a catalyst for the thermal degradation of ammonium perchlorate (AP) and the catalytic reduction of 2-nitrophenol (2-NP) and 4-nitrophenol (4-NP). The effect of temperature on the value of the apparent rate constant was also studied, and the values of the kinetic and thermodynamic parameters were calculated. This shows that the catalyst possesses high efficiency for thermally degrading of substances at low temperatures and rapidly reducing the nitroarenes in an aqueous medium.

  13. Biomimetic alignment of zinc oxide nanoparticles along a peptide nanofiber.

    PubMed

    Tomizaki, Kin-ya; Kubo, Seiya; Ahn, Soo-Ang; Satake, Masahiko; Imai, Takahito

    2012-09-18

    Zinc oxide (ZnO) has potential applications in solar cells, chemical sensors, and piezoelectronic and optoelectronic devices due to its attractive physical and chemical properties. Recently, a solution-phase method has been used to synthesize ZnO crystals with diverse (from simple to hierarchical) nanostructures that is simple, of low cost, and scalable. This method requires template molecules to control the morphology of the ZnO crystals. In this paper, we describe the design and synthesis of two short peptides (RU-003,Ac-AIEKAXEIA-NH(2); RU-027, EAHVMHKVAPRPGGGAIEKAXEIA-NH(2); X = l-2-naphthylalanine) and the characterization of their self-assembled nanostructures. We also report their potential for ZnO mineralization and the alignment of ZnO nanoparticles along peptide nanostructures at room temperature. Interestingly, nonapeptide RU-003 predominantly formed a straight fibrous structure and induced the nucleation of ZnO at its surface, leading to an alignment of ZnO nanoparticles along a peptide nanofiber. This novel method holds promise for the room-temperature fabrication of ZnO catalysts with increased specific surface area, ZnO-gated transistors, and ZnO-based nanomaterials for optical applications.

  14. Immobilization of diastase α-amylase on nano zinc oxide.

    PubMed

    Antony, Navya; Balachandran, S; Mohanan, P V

    2016-11-15

    Diastase α-amylase extracted from malt, catalyses break down of starch into maltose. It is commonly used in food and fermentation industry. In the present study nano zinc oxide is used as support for this starch hydrolyzing enzyme. IR study revealed that the enzyme got adsorbed via electrostatic interaction with the functional groups on the support. The immobilized enzyme possessed a better heat-resistance than free enzyme. The kinetic parameters were determined using Lineweaver-Burk plot. The immobilized enzyme showed higher Km 2.08mg/ml than the free enzyme whose Km is 0.45±.05mg/ml. The Vmax of immobilized enzyme was about 2.92±.02mg/ml/min and that of free enzyme was 7.14±.02mg/ml/min, showing decrease in activity after immobilization. The immobilized enzyme showed 70% activity after 30days of storage while free enzyme lost its activity within 7days. About 80% of enzyme retained activity after 4 cycles of reuse.

  15. Zinc inhibits oxidative stress-induced iron signaling and apoptosis in Caco-2 cells.

    PubMed

    Kilari, Sreenivasulu; Pullakhandam, Raghu; Nair, K Madhavan

    2010-04-01

    Studies in humans and animals have suggested negative interactions of iron and zinc during their intestinal absorption. Further, zinc seems to prevent iron-induced oxidative damage in rats, which was hypothesized to be through the modulation of the intracellular iron signaling pathway. The aim of this study was, therefore, to understand the effects of zinc on oxidant-induced iron signaling and cell death in human enterocyte-like Caco-2 cells. We demonstrate that zinc decreases glucose/glucose oxidase (H(2)O(2)-generating system)-induced iron uptake and inhibits iron-regulatory protein 1 activation and divalent metal ion transporter 1 expression. There was also a concomitant decrease in oxidant-induced intracellular labile iron and restoration of ferritin and metallothionein expression. Further, zinc enhanced the Bcl-2/Bax ratio and reduced caspase-3 activity, leading to inhibition of apoptosis. Interestingly, bathophenanthroline disulfonic acid, an extracellular iron chelator, emulated the effects of zinc except for the reduced ferritin levels. These results suggest that zinc inhibits apoptosis by reducing oxidant-induced iron signaling in Caco-2 cells.

  16. Alterations of Bio-elements, Oxidative, and Inflammatory Status in the Zinc Deficiency Model in Rats.

    PubMed

    Doboszewska, Urszula; Szewczyk, Bernadeta; Sowa-Kućma, Magdalena; Noworyta-Sokołowska, Karolina; Misztak, Paulina; Gołębiowska, Joanna; Młyniec, Katarzyna; Ostachowicz, Beata; Krośniak, Mirosław; Wojtanowska-Krośniak, Agnieszka; Gołembiowska, Krystyna; Lankosz, Marek; Piekoszewski, Wojciech; Nowak, Gabriel

    2016-01-01

    Our previous study showed that dietary zinc restriction induces depression-like behavior with concomitant up-regulation of the N-methyl-D-aspartate receptor (NMDAR). Because metal ions, oxidative stress, and inflammation are involved in depression/NMDAR function, in the present study, bio-elements (zinc, copper, iron, magnesium, and calcium), oxidative (thiobarbituric acid-reactive substances; protein carbonyl content), and inflammatory (IL-1α, IL-1β) factors were measured in serum, hippocampus (Hp), and prefrontal cortex (PFC) of male Sprague-Dawley rats subjected to a zinc-adequate (ZnA) (50 mg Zn/kg) or a zinc-deficient (ZnD) (3 mg Zn/kg) diet for 4 or 6 weeks. Both periods of dietary zinc restriction reduced serum zinc and increased serum iron levels. At 4 weeks, lowered zinc level in the PFC and Hp as well as lowered iron level in the PFC of the ZnD rats was observed. At 6 weeks, however, iron level was increased in the PFC of these rats. Although at 6 weeks zinc level in the PFC did not differ between the ZnA and ZnD rats, extracellular zinc concentration after 100 mM KCl stimulation was reduced in the PFC of the ZnD rats and was accompanied by increased extracellular iron and glutamate levels (as measured by the in vivo microdialysis). The examined oxidative and inflammatory parameters were generally enhanced in the tissue of the ZnD animals. The obtained data suggest dynamic redistribution of bio-elements and enhancement of oxidative/inflammatory parameters after dietary zinc restriction, which may have a link with depression-like behavior/NMDAR function/neurodegeneration.

  17. Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

    NASA Astrophysics Data System (ADS)

    Mayo, Daniel C.; Nolen, J. Ryan; Cook, Andrew; Mu, Richard R.; Haglund, Richard F.

    2016-03-01

    Conventional scintillation detectors are typically single crystals of heavy-metal oxides or halides doped with rare-earth ions that record the recombination of electron-hole pairs by photon emission in the visible to ultraviolet. However, the light yields are typically low enough to require photomultiplier detection with the attendant instrumental complications. Here we report initial studies of gamma ray detection by zinc oxide (ZnO) nanowires, grown by vapor-solid deposition. The nanowires grow along the c-axis in a wurtzite structure; they are typically 80 nm in diameter and have lengths of 1- 2 μm. The nanowires are single crystals of high quality, with a photoluminescence (PL) yield from band-edge exciton emission in the ultraviolet that is typically one hundred times larger than the PL yield from defect centers in the visible. Nanowire ensembles were irradiated by 662 keV gamma rays from a Cs-137 source for periods of up to ten hours; gamma rays in this energy range interact by Compton scattering, which in ZnO creates F+ centers that relax to form singly-charged positive oxygen vacancies. Following irradiation, we fit the PL spectra of the visible emission with a sum of Gaussians at the energies of the known defects. We find highly efficient PL from the irradiated area, with a figure of merit approaching 106 photons/s/MeV of deposited energy. Over a period of days, the singly charged O+ vacancies relax to the more stable doubly charged O++ vacancies. However, the overall defect PL returns to pre-irradiation values after about a week, as the vacancies diffuse to the surface of these very thin nanowires, indicating that a self-healing process restores the nanowires to their original state.

  18. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  19. The influence of zinc chloride and zinc oxide nanoparticles on air-time survival in freshwater mussels.

    PubMed

    Gagné, François; Auclair, Joëlle; Peyrot, Caroline; Wilkinson, Kevin J

    2015-01-01

    The purpose of this study was to determine the cumulative effects of exposure to either dissolved zinc or nanozinc oxide (nanoZnO) and air-time survival in freshwater mussels. Mussels were exposed to each forms of zinc for 96h then placed in air to determine survival time. A sub-group of mussels before and after 7days of exposure to air were kept aside for the determination of the following biomarkers: arachidonate-dependent cyclooxygenase (COX) and peroxidase (inflammation and oxidative stress), lipid metabolism (total lipids, esterases activity, HO-glycerol, acetyl CoA and phospholipase A2) and lipid damage (lipid peroxidation [LPO]). The results showed that air-time survival was decreased from a mean value of 18.5days to a mean value of 12days in mussels exposed to 2.5mg/L of nanoZnO although it was not lethal based on shell opening at concentrations below 50mg/L after 96h. In mussels exposed to zinc only, the median lethal concentration was estimated at 16mg/L (10-25 95% CI). The air-time survival did not significantly change in mussels exposed to the same concentration of dissolved Zn. Significant weight losses were observed at 0.5mg/L of nanoZnO and at 2.5mg/L for dissolved zinc chloride, and were also significantly correlated with air-time survival (r=0.53; p<0.01). Air exposure significantly increased COX activity in control mussels and in mussels exposed to 0.5mg/L of nanoZnO and zinc chloride. The data also suggested fatty acid breakdown and β-oxidation. Mussels exposed to contaminants are more susceptible to prolonged exposure to air during low water levels.

  20. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    NASA Astrophysics Data System (ADS)

    Jia, Junjun; Torigoshi, Yoshifumi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  1. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  2. Rambutan peels promoted biomimetic synthesis of bioinspired zinc oxide nanochains for biomedical applications.

    PubMed

    Yuvakkumar, R; Suresh, J; Saravanakumar, B; Joseph Nathanael, A; Hong, Sun Ig; Rajendran, V

    2015-02-25

    A naturally occurring rambutan peel waste was employed to synthesis bioinspired zinc oxide nanochains. Rambutan peels has the ability of ligating zinc ions as a natural ligation agent resulting in zinc oxide nanochains formation due to its extended polyphenolic system over incubation period. Successful formation of zinc oxide nanochains was confirmed employing transmission electron microscopy studies. About 60% and ∼40% cell viability was lost and 50% and 10% morphological change was observed in 7 and 4 days incubated ZnO treated cells compared with control. Moreover, 50% and 55% of cell death was observed at 24 and 48 h incubation with 7 days treated ZnO cells and hence alters and disturbs the growth of cancer cells and could be used for liver cancer cell treatment.

  3. Dechlorination of Zinc Oxide Dust from Waelz Kiln by Microwave Roasting

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Zhang, Libo; Ma, Aiyuan; Peng, Jinhui; Li, Jing; Liu, Chenhui

    2015-05-01

    The new technology of dechlorination from zinc oxide dust by microwave roasting was investigated, combined with the advantages of microwave selective heating and based on a thermodynamic analysis of zinc and lead halides. The associated dechlorination reactions were discussed in details and the effect of all the influencing parameters such as roasting temperature, holding time, stirring speed and air flow were systematically investigated. Experimental results showed that zinc oxide dust dechlorination rate could reach over 95% and meet the requirements of wet smelting electrolysis, given an air flow of 300 L/h, a stirring speed of 60 r/min, a roasting temperature of 650 °C and a holding time of 30 min. Microwave roasting provided a new solution to the dechlorination from zinc oxide dust.

  4. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell.

    PubMed

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO(3)) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO(2)) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)(3)](PF(6))(2), [Co(pby)(3)](PF(6))(3), LiClO(4), and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO(3) as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff=56%) compared to ZnO working electrode (ff=40%) under the same condition.

  5. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/ p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-04-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/ p-Si junctions were investigated. The current-voltage ( I- V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/ n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/ n-CdO/ p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C- V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S - V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  6. The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

    NASA Astrophysics Data System (ADS)

    Çavaş, M.; Yakuphanoğlu, F.; Karataş, Ş.

    2017-01-01

    Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol-gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n-CdO/p-Si junctions were investigated. The current-voltage (I-V) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/n-CdO/p-Si junctions depended on light intensity. The capacitance-voltage and conductance-voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/n-CdO/p-Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C-V and G/ω-V measurements and plotted as functions of voltage and frequency. The distribution profile of R S -V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.

  7. Kinetics of and atmospheric effects on gallium removal from a CeO{sub 2} based mixed oxide surrogate

    SciTech Connect

    Park, Y.S.; Taylor, T.N.; Atencio, A.; Butt, D.P.

    1998-12-31

    This paper describes preliminary experimental results on the kinetics of Ga removal from Ga{sub 2}O{sub 3}-doped CeO{sub 2{minus}x}, a surrogate for weapons grade PuO{sub 2{minus}x}. Ga is removed from the surrogate feedstock material using thermal techniques. An Ar-6% H{sub 2} gas was used in order to reduce the oxide to gaseous Ga{sub 2}O. Experiments were done in the temperature range of 600--1,200 C as a function of time, gas flow rate, and sample geometry. Samples were analyzed through measurements of weight change, scanning electron microscopy/energy dispersive spectroscopy, x-ray photoelectron spectroscopy, proton induced x-ray emission, and direct current plasma analysis. Gallium levels were reduced by as much as 98% (130 ppm Ga residue) of that in the starting material. Studies to date have shown CeO{sub 2{minus}x} is a very good surrogate for PuO{sub 2{minus}x}.

  8. Nanomolar concentrations of zinc pyrithione increase cell susceptibility to oxidative stress induced by hydrogen peroxide in rat thymocytes.

    PubMed

    Oyama, Tomohiro M; Saito, Minoru; Yonezawa, Takayasu; Okano, Yoshiro; Oyama, Yasuo

    2012-06-01

    Zinc pyrithione is used as an antifouling agent. However, the environmental impacts of zinc pyrithione have recently been of concern. Zinc induces diverse actions during oxidative stress; therefore, we examined the effect of zinc pyrithione on rat thymocytes suffering from oxidative stress using appropriate fluorescent probes. The cytotoxicity of zinc pyrithione was not observed when the cells were incubated with 3 μM zinc pyrithione for 3 h. However, zinc pyrithione at nanomolar concentrations (10 nM or more) significantly increased the lethality of cells suffering from oxidative stress induced by 3 mM H(2)O(2). The application of zinc pyrithione alone at nanomolar concentrations increased intracellular Zn(2+) level and the cellular content of superoxide anions, and decreased the cellular content of nonprotein thiols. The simultaneous application of nanomolar zinc pyrithione and micromolar H(2)O(2) synergistically increased the intracellular Zn(2+) level. Therefore, zinc pyrithione at nanomolar concentrations may exert severe cytotoxic action on cells simultaneously exposed to chemicals that induce oxidative stress. If so, zinc pyrithione leaked from antifouling materials into surrounding environments would be a risk factor for aquatic ecosystems. Alternatively, zinc pyrithione under conditions of oxidative stress may become more potent antifouling ingredient.

  9. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Babar, A. R.; Deshamukh, P. R.; Deokate, R. J.; Haranath, D.; Bhosale, C. H.; Rajpure, K. Y.

    2008-07-01

    Zinc oxide (ZnO) and ZnO : Ga films have been deposited by the spray pyrolysis method onto preheated glass substrates using zinc acetate and gallium nitrate as precursors for Zn and Ga ions, respectively. The effect of Ga doping on the structural, morphological, optical and electrical properties of sprayed ZnO thin films were investigated using x-ray diffraction (XRD), scanning electron microscopy, optical absorption, photoluminescence (PL) and Hall effect techniques. XRD studies reveal that films are polycrystalline with hexagonal (wurtzite) crystal structure. The thin films were oriented along the (0 0 2) plane. Room temperature PL measurements indicate that the deposited films exhibit proper doping of Ga in ZnO lattice. The average transparency in the visible range was around ~85-95% for typical thin film deposited using 2 at% gallium doping. The optical band gap increased from 3.31 to 3.34 eV with Ga doping of 2 at%. The addition of gallium induces a decrease in electrical resistivity of the ZnO : Ga films up to 2 at% gallium doping. The highest figure of merit observed in this present study was 3.09 × 10-3 cm2 Ω-1.

  10. Antibacterial Activity of Dental Composites Containing Zinc Oxide Nanoparticles

    PubMed Central

    Sevinç, Berdan Aydin; Hanley, Luke

    2010-01-01

    The resin-based dental composites commonly used in restorations result in more plaque accumulation than other materials. Bacterial biofilm growth contributes to secondary caries and failure of resin-based dental composites. Methods to inhibit biofilm growth on dental composites have been sought for several decades. It is demonstrated here that zinc oxide nanoparticles (ZnO-NPs) blended at 10% (w/w) fraction into dental composites display antimicrobial activity and reduce growth of bacterial biofilms by roughly 80% for a single-species model dental biofilm. Antibacterial effectiveness of ZnO-NPs was assessed against Streptococcus sobrinus ATCC 27352 grown both planktonically and as biofilms on composites. Direct contact inhibition was observed by scanning electron microscopy and confocal laser scanning microscopy while biofilm formation was quantified by viable counts. An 80% reduction in bacterial counts was observed with 10% ZnO-NP-containing composites compared with their unmodified counterpart, indicating a statistically significant suppression of biofilm growth. Although, 20% of the bacterial population survived and could form a biofilm layer again, 10% ZnO-NP-containing composites maintained at least some inhibitory activity even after the third generation of biofilm growth. Microscopy demonstrated continuous biofilm formation for unmodified composites after one day growth, but only sparsely distributed biofilms formed on 10% ZnO-NP-containing composites. The minimum inhibitory concentration of ZnO-NPs suspended in S. sobrinus planktonic culture was 50 μg/ml. 10% ZnO-NP-containing composites qualitatively showed less biofilm after one day anaerobic growth of a three-species initial colonizer biofilm after when compared to unmodified composites, but did not significantly reduce growth after three days. PMID:20225252

  11. Decomposition of Organometal Halide Perovskite Films on Zinc Oxide Nanoparticles.

    PubMed

    Cheng, Yuanhang; Yang, Qing-Dan; Xiao, Jingyang; Xue, Qifan; Li, Ho-Wa; Guan, Zhiqiang; Yip, Hin-Lap; Tsang, Sai-Wing

    2015-09-16

    Solution processed zinc oxide (ZnO) nanoparticles (NPs) with excellent electron transport properties and a low-temperature process is a viable candidate to replace titanium dioxide (TiO2) as electron transport layer to develop high-efficiency perovskite solar cells on flexible substrates. However, the number of reported high-performance perovskite solar cells using ZnO-NPs is still limited. Here we report a detailed investigation on the chemistry and crystal growth of CH3NH3PbI3 perovskite on ZnO-NP thin films. We find that the perovskite films would severely decompose into PbI2 upon thermal annealing on the bare ZnO-NP surface. X-ray photoelectron spectroscopy (XPS) results show that the hydroxide groups on the ZnO-NP surface accelerate the decomposition of the perovskite films. To reduce the decomposition, we introduce a buffer layer in between the ZnO-NPs and perovskite layers. We find that a commonly used buffer layer with small molecule [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) can slow down but cannot completely avoid the decomposition. On the other hand, a polymeric buffer layer using poly(ethylenimine) (PEI) can effectively separate the ZnO-NPs and perovskite, which allows larger crystal formation with thermal annealing. The power conversion efficiencies of perovskite photovoltaic cells are significantly increased from 6.4% to 10.2% by replacing PC61BM with PEI as the buffer layer.

  12. Alveolar Epithelial Cell Injury Due to Zinc Oxide Nanoparticle Exposure

    PubMed Central

    Kim, Yong Ho; Fazlollahi, Farnoosh; Kennedy, Ian M.; Yacobi, Nazanin R.; Hamm-Alvarez, Sarah F.; Borok, Zea; Kim, Kwang-Jin; Crandall, Edward D.

    2010-01-01

    Rationale: Although inhalation of zinc oxide (ZnO) nanoparticles (NPs) is known to cause systemic disease (i.e., metal fume fever), little is known about mechanisms underlying injury to alveolar epithelium. Objectives: Investigate ZnO NP–induced injury to alveolar epithelium by exposing primary cultured rat alveolar epithelial cell monolayers (RAECMs) to ZnO NPs. Methods: RAECMs were exposed apically to ZnO NPs or, in some experiments, to culture fluid containing ZnCl2 or free Zn released from ZnO NPs. Transepithelial electrical resistance (RT) and equivalent short-circuit current (IEQ) were assessed as functions of concentration and time. Morphologic changes, lactate dehydrogenase release, cell membrane integrity, intracellular reactive oxygen species (ROS), and mitochondrial activity were measured. Measurements and Main Results: Apical exposure to 176 μg/ml ZnO NPs decreased RT and IEQ of RAECMs by 100% over 24 hours, whereas exposure to 11 μg/ml ZnO NPs had little effect. Changes in RT and IEQ caused by 176 μg/ml ZnO NPs were irreversible. ZnO NP effects on RT yielded half-maximal concentrations of approximately 20 μg/ml. Apical exposure for 24 hours to 176 μg/ml ZnO NPs induced decreases in mitochondrial activity and increases in lactate dehydrogenase release, permeability to fluorescein sulfonic acid, increased intracellular ROS, and translocation of ZnO NPs from apical to basolateral fluid (most likely across injured cells and/or damaged paracellular pathways). Conclusions: ZnO NPs cause severe injury to RAECMs in a dose- and time-dependent manner, mediated, at least in part, by free Zn released from ZnO NPs, mitochondrial dysfunction, and increased intracellular ROS. PMID:20639441

  13. Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

    NASA Astrophysics Data System (ADS)

    Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

    2017-02-01

    Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

  14. High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers

    NASA Astrophysics Data System (ADS)

    Mohd Yusoff, Abd Rashid Bin; Kim, Hyeong Pil; Jang, Jin

    2014-01-01

    We report air stable inverted organic photovoltaics (OPVs) incorporating graphene oxide (GO) and solution processed zinc oxide (ZnO) as hole transport and electron transport layers, respectively. Both the hole transport layer and the electron transport layer (HTL and ETL) are of advantage in high transparency and environmental stability. The use of GO and ZnO in poly(2,7-carbazole) derivative (PCDTBT):fullerene derivative (PC70BM)-based inverted OPVs leads to an improved device stability and enhanced high open circuit voltage (Voc) of 0.81 V, a short-circuit current density (Jsc) of 14.10 mA cm-2, and a fill factor (FF) of 54.44 along with a power conversion efficiency of 6.20%.

  15. Curcumin Attenuates Hepatotoxicity Induced by Zinc Oxide Nanoparticles in Rats

    PubMed Central

    Khorsandi, Layasadat; Mansouri, Esrafil; Orazizadeh, Mahmoud; Jozi, Zahra

    2016-01-01

    Background: Zinc oxide nanoparticles (NZnO) are increasingly used in modern life. Most metal nanoparticles have adverse effects on the liver. Aims: To explore the protective action of curcumin (Cur) against hepatotoxicity induced by NZnO in rats. Study Design: Animal experimentation. Methods: Control group animals received normal saline, while the Cur group animals were treated with 200 mg/kg of Cur orally for 21 days. NZnO-intoxicated rats received 50 mg/kg of NZnO for 14 days by gavage method. In the NZnO+Cur group, rats were pretreated with Cur for 7 days before NZnO administration. Plasma activities of Alanine aminotransferase (ALT), aspartate aminotransferase (AST) and alkaline phosphatase (ALP) were measured as biomarkers of hepatotoxicity. Hepatic levels of malondialdehyde (MDA) and superoxide dismutase (SOD) and glutathione peroxidase (GPx) activities were measured for detection of oxidative stress in liver tissue. Histological changes and apoptosis in liver tissue were studied by using Hematoxylin-eosin staining and the transferase dUTP nick end labeling (TUNEL) method. Results: NZnO induced a significant increase in plasma AST (2.8-fold), ALT (2.7-fold) and ALP (1.97-fold) activity in comparison to the control group (p<0.01). NZnO increased MDA content and reduced SOD and GPx activities. NZnO caused liver damage including centrilobular necrosis and microvesicular steatosis. The percentage of apoptosis in hepatocytes was increased in NZnO-treated rats (p<0.01). Pre-treatment of Cur significantly reduced lipid peroxidation (39%), increased SOD (156%) and GPx (26%) activities, and attenuated ALT (47%), AST (41%) and ALP (30%) activities. Pre-treatment with Cur also decreased the histology changes and apoptotic index of hepatocytes (p<0.05). Conclusion: These findings indicate that Cur effectively protects against NZnO-induced hepatotoxicity in rats. However, future studies are required to propose Cur as a potential protective agent against hepatotoxicity

  16. Feeding Low or Pharmacological Concentrations of Zinc Oxide Changes the Hepatic Proteome Profiles in Weaned Piglets

    PubMed Central

    Bondzio, Angelika; Pieper, Robert; Gabler, Christoph; Weise, Christoph; Schulze, Petra; Zentek, Juergen; Einspanier, Ralf

    2013-01-01

    Pharmacological levels of zinc oxide can promote growth and health of weaning piglets, but the underlying molecular mechanisms are yet not fully understood. The aim of this study was to determine changes in the global hepatic protein expression in response to dietary zinc oxide in weaned piglets. Nine half-sib piglets were allocated to three dietary zinc treatment groups (50, 150, 2500 mg/kg dry matter). After 14 d, pigs were euthanized and liver samples taken. The increase in hepatic zinc concentration following dietary supplementation of zinc was accompanied by up-regulation of metallothionein mRNA and protein expression. Global hepatic protein profiles were obtained by two-dimensional difference gel electrophoresis following matrix-assisted laser desorption ionization/time-of-flight mass spectrometry. A total of 15 proteins were differentially (P<0.05) expressed between groups receiving control (150 mg/kg) or pharmacological levels of zinc (2500 mg/kg) with 7 down- (e.g. arginase1, thiosulfate sulfurtransferase, HSP70) and 8 up-regulated (e.g. apolipoprotein AI, transferrin, C1-tetrahydrofolate synthase) proteins. Additionally, three proteins were differentially expressed with low zinc supply (50 mg/kg Zn) in comparison to the control diet. The identified proteins were mainly associated with functions related to cellular stress, transport, metabolism, and signal transduction. The differential regulation was evaluated at the mRNA level and a subset of three proteins of different functional groups was selected for confirmation by western blotting. The results of this proteomic study suggest that zinc affects important liver functions such as blood protein secretion, protein metabolism, detoxification and redox homeostasis, thus supporting the hypothesis of intermediary effects of pharmacological levels of zinc oxide fed to pigs. PMID:24282572

  17. Effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in streptozotocin-induced diabetic rats

    PubMed Central

    Asri-Rezaei, Siamak; Tamaddonfard, Esmaeal; Ghasemsoltani-Momtaz, Behnaz; Erfanparast, Amir; Gholamalipour, Sima

    2015-01-01

    Objectives: Crocin is one of constituents of saffron and has antioxidant property. Zinc chloride is one of the common compounds of zinc with antioxidant activity. The present study was aimed to investigate separate and combined treatment effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in diabetic rats. Materials and Methods: Diabetes was induced by intraperitoneal (i.p.) injection of 50 mg/kg of streptozotocin (STZ) and was confirmed by blood glucose levels higher than 250 mg/dL. After confirmation of diabetes, injections (i.p.) of crocin and zinc chloride were performed for six weeks. At the end of the experiment, blood levels of zinc, glucose, insulin, malodialdehyde (MDA), and total antioxidant capacity (TAC) were measured. ‎ Results: Crocin (25 and 50 mg/kg) and zinc chloride (5 mg/kg) significantly recovered the decreased levels of zinc, insulin, and TAC and improved the increased levels of glucose and MDA in STZ-induced diabetic rats. In a combination treatment performed with an ineffective dose of crocin (12.5 mg/kg) and a low dose of zinc chloride (1.25 mg/kg), improving effects were observed on the above-mentioned biochemical parameters.‎ Conclusion: The results indicated that separate and combined treatments with crocin and zinc chloride produced improving effects on the blood levels of zinc, glucose, insulin, MDA and TAC in STZ-induced diabetic rats. PMID:26468459

  18. Comparison of Calcium Phosphate and Zinc Oxide Nanoparticles as Dermal Penetration Enhancers for Albumin

    PubMed Central

    Shokri, Narges; Javar, H. A.

    2015-01-01

    Dermal drug delivery is highly preferred by patients due to its several advantages. Protein therapeutics have attracted huge attention recently. Since dermal delivery of proteins encounter problems, in this investigation, zinc oxide nanoparticles and calcium phosphate nanoparticles were compared as enhancers for dermal permeation of albumin. Albumin was applied simultaneously with zinc oxide nanoparticles or calcium phosphate nanoparticles on pieces of mouse skin. Skin permeation of albumin over time was determined using a diffusion cell. Skin distribution of the nanoparticles and albumin over time was determined by optical and fluorescence microscopy. Zinc oxide nanoparticles and calcium phosphate nanoparticles acted as enhancers for skin permeation of albumin. Cumulative permeated albumin in presence of zinc oxide nanoparticles after 0, 0.5, 1, 1.5 and 2 h, were 0±0, 11.7±3.3, 21.1±3.5, 40.2±3.6 and 40.2±3.6 mg, respectively and in presence of calcium phosphate nanoparticles were 0±0, 20.9±7.4, 33.8±5.5, 33.8±3.7 and 33.8±3.7 mg, respectively. After 0.5 h, little amount of albumin was permeated in presence of every kind of the nanoparticles. After 0.5 or 1 h, the permeated albumin in presence of calcium phosphate nanoparticles was more than that in presence of zinc oxide nanoparticles and after 1.5 h the permeated albumin in presence of zinc oxide nanoparticles was more than that in presence of calcium phosphate nanoparticles. Images of skin distribution of the two nanoparticles over time, were somewhat different and distribution of albumin correlated with the distribution of the nanoparticles alone. The profiles of albumin permeation (in presence of each of the nanoparticles) versus time was delayed and linear for both nanoparticles while the slope for calcium phosphate nanoparticles was higher than zinc oxide nanoparticles. The enhancer effect of zinc oxide nanoparticles was stronger while the enhancer effect of calcium phosphate nanoparticles was

  19. Comparison of Calcium Phosphate and Zinc Oxide Nanoparticles as Dermal Penetration Enhancers for Albumin.

    PubMed

    Shokri, Narges; Javar, H A

    2015-01-01

    Dermal drug delivery is highly preferred by patients due to its several advantages. Protein therapeutics have attracted huge attention recently. Since dermal delivery of proteins encounter problems, in this investigation, zinc oxide nanoparticles and calcium phosphate nanoparticles were compared as enhancers for dermal permeation of albumin. Albumin was applied simultaneously with zinc oxide nanoparticles or calcium phosphate nanoparticles on pieces of mouse skin. Skin permeation of albumin over time was determined using a diffusion cell. Skin distribution of the nanoparticles and albumin over time was determined by optical and fluorescence microscopy. Zinc oxide nanoparticles and calcium phosphate nanoparticles acted as enhancers for skin permeation of albumin. Cumulative permeated albumin in presence of zinc oxide nanoparticles after 0, 0.5, 1, 1.5 and 2 h, were 0±0, 11.7±3.3, 21.1±3.5, 40.2±3.6 and 40.2±3.6 mg, respectively and in presence of calcium phosphate nanoparticles were 0±0, 20.9±7.4, 33.8±5.5, 33.8±3.7 and 33.8±3.7 mg, respectively. After 0.5 h, little amount of albumin was permeated in presence of every kind of the nanoparticles. After 0.5 or 1 h, the permeated albumin in presence of calcium phosphate nanoparticles was more than that in presence of zinc oxide nanoparticles and after 1.5 h the permeated albumin in presence of zinc oxide nanoparticles was more than that in presence of calcium phosphate nanoparticles. Images of skin distribution of the two nanoparticles over time, were somewhat different and distribution of albumin correlated with the distribution of the nanoparticles alone. The profiles of albumin permeation (in presence of each of the nanoparticles) versus time was delayed and linear for both nanoparticles while the slope for calcium phosphate nanoparticles was higher than zinc oxide nanoparticles. The enhancer effect of zinc oxide nanoparticles was stronger while the enhancer effect of calcium phosphate nanoparticles was

  20. The interaction of zinc oxide-based dental cements with aqueous solutions of potassium fluoride.

    PubMed

    Pawluk, K; Booth, S E; Coleman, N J; Nicholson, J W

    2008-09-01

    The ability of zinc oxide-based dental cements (zinc phosphate and zinc polycarboxylate) to take up fluoride from aqueous solution has been studied. Only zinc phosphate cement was found to take up any measurable fluoride after 5 h exposure to the solutions. The zinc oxide filler of the zinc phosphate also failed to take up fluoride from solution. The key interaction for this uptake was thus shown to involve the phosphate groups of the set cement. However, whether this took the form of phosphate/fluoride exchange, or the formation of oxyfluoro-phosphate groups was not clear. Fluoride uptake followed radicaltime kinetics for about 2 h in some cases, but was generally better modelled by the Elovich equation, dq(t)/dt = alpha exp(-betaq(t)). Values for alpha varied from 3.80 to 2.48 x 10(4), and for beta from 7.19 x 10(-3) to 0.1946, though only beta showed any sort of trend, becoming smaller with increasing fluoride concentration. Fluoride was released from the zinc phosphate cements in processes that were diffusion based up to M(t)/M(infinity) of about 0.4. No further release occurred when specimens were placed in fresh volumes of deionised water. Only a fraction of the fluoride taken up was re-released, demonstrating that most of the fluoride taken up becomes irreversibly bound within the cement.

  1. Solubility of nano-zinc oxide in environmentally and biologically important matrices

    PubMed Central

    Reed, Robert B.; Ladner, David A.; Higgins, Christopher P.; Westerhoff, Paul; Ranville, James F.

    2011-01-01

    Increasing manufacture and use of engineered nanoparticles (NPs) is leading to a greater probability for release of ENPs into the environment and exposure to organisms. In particular, zinc oxide (ZnO) is toxic, although it is unclear whether this toxicity is due to the zinc oxide nanoparticles (ZnO), dissolution to Zn2+, or some combination thereof. The goal of this study was to determine the relative solubilites of both commercially available and in-house synthesized ZnO in matrices used for environmental fate and transport or biological toxicity studies. Dissolution of ZnO was observed in nanopure water (7.18– 7.40 mg/L dissolved Zn, as measured by filtration) and Roswell Park Memorial Institute medium (RPMI-1640) (~5 mg/L), but much more dissolution was observed in Dulbecco’s Modified Eagle’s Medium (DMEM), where the dissolved Zn concentration exceeded 34 mg/L. Moderately hard water exhibited low zinc solubility, likely due to precipitation of a zinc carbonate solid phase. Precipitation of a zinc-containing solid phase in RPMI also appeared to limit zinc solubility. Equilibrium conditions with respect to ZnO solubility were not apparent in these matrices, even after more than 1,000 h of dissolution. These results suggest that solution chemistry exerts a strong influence on ZnO dissolution and can result in limits on zinc solubility due to precipitation of less soluble solid phases. PMID:21994124

  2. Anticancer activity of fungal L-asparaginase conjugated with zinc oxide nanoparticles.

    PubMed

    Baskar, G; Chandhuru, J; Sheraz Fahad, K; Praveen, A S; Chamundeeswari, M; Muthukumar, T

    2015-01-01

    Demand for developing novel delivery system for cancer treatment has increased due to the side effects present in intravenous injection of L-asparaginase. Nanoparticles are used for delivering the drugs to its destination in cancer cure. Nanobiocomposite of zinc oxide nanoparticles conjugated with L-asparaginase was produced by Aspergillus terreus and was confirmed using maximum UV-Vis absorption at 340 nm in the present work. The presence of functional groups like OH, C-H, -C=N and C=O on the surface of nanobiocomposite was found from Fourier transform infrared spectrum analysis. Size of the produced nanocomposite was found in the range of 28-63 nm using scanning electron microscope. The crystalline nature of the synthesized nanobiocomposites was confirmed by X-ray diffraction analysis. The presence of zinc oxide on synthesized nanobiocomposite was confirmed by energy dispersive spectrum analysis. The anti-cancerous nature of the synthesized zinc oxide conjugated L-asparaginase nanobiocomposite on MCF-7 cell line was studied using MTT assay. The viability of the MCF-7 cells was decreased to 35.02 % when it was treated with L-asparaginase conjugated zinc oxide nanobiocomposite. Hence it is proved that the synthesized nanobiocomposites of zinc oxide conjugated L-asparaginase has good anti-cancerous activity.

  3. Preliminary study on zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction

    NASA Astrophysics Data System (ADS)

    Wen, Yue-Hua; Cheng, Jie; Ning, Shang-Qi; Yang, Yu-Sheng

    A zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction is reported in this paper. It possesses functions of both zincate reduction and electrochemical preparation, showing the potential for increasing the electronic energy utilization. Charge/discharge tests and scanning electron microscopy (SEM) micrographs reveal that when a nickel sheet plated with the high-H 2-overpotential metal, cadmium, was used as the negative substrate electrode, the dendritic formation and hydrogen evolution are suppressed effectively, and granular zinc deposits become larger but relatively dense with the increase of charge time. The performance of batteries is favorable even if the charge time is as long as 5 h at the current density of 20 mA cm -2. Better discharge performance is achieved using a 'cavity-opening' configuration for the discharge cell rather than a 'gas-introducing' configuration. The highest energy efficiency is up to 59.2%. That is, the energy consumed by organic electro-synthesis can be recovered by 59.2%. Cyclic voltammograms show that the sintered nickel electrode exhibits a good electro-catalysis activity for the propanol oxidation. The increase of propanol concentration conduces to an enhancement in the organic electro-synthesis efficiency. The organic electro-synthesis current efficiency of 82% can be obtained.

  4. Photocurrent spectroscopy of cadmium sulfide/plastic, cadmium sulfide/glass, and zinc telluride/gallium arsenide hetero-pairs formed with pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Acharya, Krishna Prasad

    This dissertation presents photocurrent (PC) spectroscopy of thin-film cadmium sulfide (CdS) on plastic, CdS on glass, and zinc telluride (ZnTe) on gallium arsenide (GaAs) hetero-pairs. All samples have been prepared with pulsed-laser deposition (PLD) and the thesis is organized into three principal sections. The first section presents the PLD essentials and characterization of CdS thin films on transparent plastic substrates. The second part focuses on the exploitation of CdS films on glass to quench or modulate alternating photocurrent (APC) by additional constant blue light illumination. Finally, PC spectra modification of n-GaAs due to ZnTe PLD will be investigated. First, the merger of a transparent plastic substrate with thin-film CdS for photonic application was realized using low-temperature PLD, where low-temperature PLD means the substrates were not externally heated. Although plastic is not considered to be a favored substrate material for semiconductor thin-film formation, the deposited CdS film possessed good adhesion to the plastic substrates and showed a blue-shifted photosensitivity with peak at 2.54 eV. The CdS deposition rate was monitored at different laser fluences and the maximum rate was found at 2.68 J/cm2. The visualization of the surface using an atomic force microscope (AFM) revealed its mosaic structure and electron probe microanalysis showed that target composition was maintained in the film. The study of thickness distribution revealed that the film deposition area is significantly increased with increase in laser fluence. The achieved results demonstrate the capability of PLD to form novel heterostructures with appealing and useful technological properties such as plasticity and low weight. In the second part, APC control via blue light illumination employing thin-film PLD CdS on a glass is introduced. In fact, the APC driven through the CdS film in conjunction with bias was quenched when the sample was additionally illuminated with a

  5. Zinc (hydr)oxide/graphite oxide/AuNPs composites: role of surface features in H₂S reactive adsorption.

    PubMed

    Giannakoudakis, Dimitrios A; Bandosz, Teresa J

    2014-12-15

    Zinc hydroxide/graphite oxide/AuNPs composites with various levels of complexity were synthesized using an in situ precipitation method. Then they were used as H2S adsorbents in visible light. The materials' surfaces were characterized before and after H2S adsorption by various physical and chemical methods (XRD, FTIR, thermal analysis, potentiometric titration, adsorption of nitrogen and SEM/EDX). Significant differences in surface features and synergistic effects were found depending on the materials' composition. Addition of graphite oxide and the deposition of gold nanoparticles resulted in a marked increase in the adsorption capacity in comparison with that on the zinc hydroxide and zinc hydroxide/AuNP. Addition of AuNPs to zinc hydroxide led to a crystalline ZnO/AuNP composite while the zinc hydroxide/graphite oxide/AuNP composite was amorphous. The ZnOH/GO/AuNPs composite exhibited the greatest H2S adsorption capacity due to the increased number of OH terminal groups and the conductive properties of GO that facilitated the electron transfer and consequently the formation of superoxide ions promoting oxidation of hydrogen sulfide. AuNPs present in the composite increased the conductivity, helped with electron transfer to oxygen, and prevented the fast recombination of the electrons and holes.

  6. The Porphyromonas gingivalis HmuY haemophore binds gallium(iii), zinc(ii), cobalt(iii), manganese(iii), nickel(ii), and copper(ii) protoporphyrin IX but in a manner different to iron(iii) protoporphyrin IX.

    PubMed

    Wójtowicz, Halina; Bielecki, Marcin; Wojaczyński, Jacek; Olczak, Mariusz; Smalley, John W; Olczak, Teresa

    2013-04-01

    Porphyromonas gingivalis, a major etiological agent of chronic periodontitis, acquires haem from host haemoproteins through a haem transporter HmuR and a haemophore HmuY. The aim of this study was to analyse the binding specificity of HmuY towards non-iron metalloporphyrins which may be employed as antimicrobials to treat periodontitis. HmuY binds gallium(iii), zinc(ii), cobalt(iii), manganese(iii), nickel(ii), and copper(ii) protoporphyrin IX but in a manner different to iron(iii) protoporphyrin IX which uses His(134) and His(166) as axial ligands. The metal ions in Ga(iii)PPIX and Zn(ii)PPIX can accept only His(166) as an axial ligand, whereas nickel(ii) and copper(ii) interact exclusively with His(134). Two forms of pentacoordinate manganese(iii) are present in the Mn(iii)PPIX-HmuY complex since the metal accepts either His(134) or His(166) as a single axial ligand. The cobalt ion is hexacoordinate in the Co(iii)PPIX-HmuY complex and binds His(134) and His(166) as axial ligands; however, some differences in their environments exist. Despite different coordination modes of the central metal ion, gallium(iii), zinc(ii), cobalt(iii), and manganese(iii) protoporphyrin IX bound to the HmuY haemophore cannot be displaced by excess haem. All of the metalloporphyrins examined bind to a P. gingivalis wild-type strain with higher ability compared to a mutant strain lacking a functional hmuY gene, thus corroborating binding of non-iron metalloporphyrins to purified HmuY protein. Our results further clarify the basis of metalloporphyrin acquisition by P. gingivalis and add to understanding of the interactions with porphyrin derivatives which exhibit antimicrobial activity against P. gingivalis.

  7. Facile synthesis of zinc hydroxide carbonate flowers on zinc oxide nanorods with attractive luminescent and optochemical performance

    NASA Astrophysics Data System (ADS)

    Mao, Jing; Li, Jia-Jun; Ling, Tao; Liu, Hui; Yang, Jing; Du, Xi-Wen

    2011-06-01

    A simple synthesis route was designed to fabricate a functional composite, zinc hydroxide carbonate (ZHC) flowers on zinc oxide (ZnO) nanorods. The hydrolysis of hexamethylenetetramine (HMT) can generate various species which are slowly released and gradually change reaction modes in a Zn(NO3)2/HMT solution. As a result, ZnO nanorods and ZHC flowers can be sequentially synthesized and connect very well under constant experimental conditions. The obtained composite has the advantages of both components and exhibits attractive properties. For instance, ZHC flowers on ZnO nanorods exhibit strong blue emission under the excitation of ultraviolet light, and dye-sensitized solar cells with the annealed composite as photoanode achieve much higher conversion efficiency than pure nanorod arrays.

  8. Zinc Oxide Nanoparticles Affect Biomass Accumulation and Photosynthesis in Arabidopsis

    PubMed Central

    Wang, Xiaoping; Yang, Xiyu; Chen, Siyu; Li, Qianqian; Wang, Wei; Hou, Chunjiang; Gao, Xiao; Wang, Li; Wang, Shucai

    2016-01-01

    Dramatic increase in the use of nanoparticles (NPs) in a variety of applications greatly increased the likelihood of the release of NPs into the environment. Zinc oxide nanoparticles (ZnO NPs) are among the most commonly used NPs, and it has been shown that ZnO NPs were harmful to several different plants. We report here the effects of ZnO NPs exposure on biomass accumulation and photosynthesis in Arabidopsis. We found that 200 and 300 mg/L ZnO NPs treatments reduced Arabidopsis growth by ∼20 and 80%, respectively, in comparison to the control. Pigments measurement showed that Chlorophyll a and b contents were reduced more than 50%, whereas carotenoid contents remain largely unaffected in 300 mg/L ZnO NPs treated Arabidopsis plants. Consistent with this, net rate of photosynthesis, leaf stomatal conductance, intercellular CO2 concentration and transpiration rate were all reduced more than 50% in 300 mg/L ZnO NPs treated plants. Quantitative RT-PCR results showed that expression levels of chlorophyll synthesis genes including CHLOROPHYLL A OXYGENASE (CAO), CHLOROPHYLL SYNTHASE (CHLG), COPPER RESPONSE DEFECT 1 (CRD1), MAGNESIUM-PROTOPORPHYRIN IX METHYLTRANSFERASE (CHLM) and MG-CHELATASE SUBUNIT D (CHLD), and photosystem structure gene PHOTOSYSTEM I SUBUNIT D-2 (PSAD2), PHOTOSYSTEM I SUBUNIT E-2 (PSAE2), PHOTOSYSTEM I SUBUNIT K (PSAK) and PHOTOSYSTEM I SUBUNIT K (PSAN) were reduced about five folds in 300 mg/L ZnO NPs treated plants. On the other hand, elevated expression, though to different degrees, of several carotenoids synthesis genes including GERANYLGERANYL PYROPHOSPHATE SYNTHASE 6 (GGPS6), PHYTOENE SYNTHASE (PSY) PHYTOENE DESATURASE (PDS), and ZETA-CAROTENE DESATURASE (ZDS) were observed in ZnO NPs treated plants. Taken together, these results suggest that toxicity effects of ZnO NPs observed in Arabidopsis was likely due to the inhibition of the expression of chlorophyll synthesis genes and photosystem structure genes, which results in the inhibition of

  9. Photocatalytic degradation of organochlorine compounds over titanium oxide and titanium oxide containing zinc oxide decatungstate and hydrogen peroxide

    SciTech Connect

    Sattari, D.

    1995-12-01

    Ten organochlorine solvents, commonly used in industry, which are di- tri- and tetra- chloro derivatives of methane, ethane and ethylene were photocatalytically degraded over titanium oxide and titanium oxide containing zinc oxide: decatungstate and hydrogen peroxide. The study has been carried out by determining the yield of organochlorine degradation at different irradiation time. It was found that for derivatives of the three compounds the degradation rates were in the order of di>tri>tetra and for those containing the same number of chlorine substituents the order was ethylene>ethane. During the degradation of each organochlorine solvent chloride was liberated. Stoichiometry for photocatalytic degradation of organochlorine solvents are C{sub x}H{sub y-z}Cl{sub z} + xO{sub 2}{yields}xCO{sub 2} + (y-z)H{sup +} + zCl{sup -}.

  10. Microwave and millimeter wave dielectric permittivity and magnetic permeability of epsilon-gallium-iron-oxide nano-powders

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2015-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized, which have ferromagnetic resonant frequencies appearing over the frequency range of 30 GHz to 150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the sol-gel method. The particle sizes are observed to be smaller than 100 nm. In this paper, in-waveguide transmission and reflection method and the free space magneto-optical approach have been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. These techniques enable to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the microwave and millimeter wave frequency range from single set of direct measurements. The complex dielectric permittivity and magnetic permeability spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  11. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide.

    PubMed

    Mackus, Adriaan J M; MacIsaac, Callisto; Kim, Woo-Hee; Bent, Stacey F

    2017-02-07

    For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H2O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO2 ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO2 ALD process, is released not only during SnO2 ALD but also when depositing ZnO after SnO2, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO2 powder revealed that a significant fraction of the ligands persist during both SnO2 and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H2O exposure is even less effective when ZnO ALD is carried out after SnO2 ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. The underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed.

  12. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide

    NASA Astrophysics Data System (ADS)

    Mackus, Adriaan J. M.; MacIsaac, Callisto; Kim, Woo-Hee; Bent, Stacey F.

    2017-02-01

    For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H2O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO2 ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO2 ALD process, is released not only during SnO2 ALD but also when depositing ZnO after SnO2, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO2 powder revealed that a significant fraction of the ligands persist during both SnO2 and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H2O exposure is even less effective when ZnO ALD is carried out after SnO2 ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. The underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed.

  13. Synthesis and catalytic properties of mesoporous, bifunctional, gallium-niobium mixed oxides.

    PubMed

    Deshmane, Chinmay A; Jasinski, Jacek B; Ratnasamy, Paul; Carreon, Moises A

    2010-09-14

    Thermally stable mesoporous Ga-Nb mixed oxides, active in both acid-catalysed and redox reactions have been synthesized via self-assembly hydrothermal assisted approach. Methyl oleate, a major component of biodiesels, undergoes double bond and skeletal isomerisation as well as dehydrogenation over these novel mesophases.

  14. Synthesis and characterization of zinc oxide-neem oil-chitosan bionanocomposite for food packaging application.

    PubMed

    Sanuja, S; Agalya, A; Umapathy, M J

    2015-03-01

    Nano zinc oxide at different concentrations (0.1, 0.3 and 0.5%) and neem essential oil were incorporated into the chitosan polymer by solution cast method to enhance the properties of the bionanocomposite film. The functional groups, crystalline particle size, thermal stability and morphology were determined using FTIR, XRD, TGA and SEM, respectively. The results showed that 0.5% nano zinc oxide incorporated composite film have improved tensile strength, elongation, film thickness, film transparency and decreased water solubility, swelling and barrier properties due to the presence of neem oil and nano zinc oxide in the polymer matrix. Further antibacterial activity by well diffusion assay method was followed against Escherichia coli which were found to have good inhibition effect. In addition to this food quality application were carried against carrot and compared with the commercial film.

  15. BIOCHEMISTRY OF MOBILE ZINC AND NITRIC OXIDE REVEALED BY FLUORESCENT SENSORS

    PubMed Central

    Pluth, Michael D.; Tomat, Elisa; Lippard, Stephen J.

    2010-01-01

    Biologically mobile zinc and nitric oxide (NO) are two prominent examples of inorganic compounds involved in numerous signaling pathways in living systems. In the past decade, a synergy of regulation, signaling, and translocation of these two species has emerged in several areas of human physiology, providing additional incentive for developing adequate detection systems for Zn(II) ions and NO in biological specimens. Fluorescent probes for both of these bioinorganic analytes provide excellent tools for their detection, with high spatial and temporal resolution. We review the most widely used fluorescent sensors for biological zinc and nitric oxide, together with promising new developments and unmet needs of contemporary Zn(II) and NO biological imaging. The interplay between zinc and nitric oxide in the nervous, cardiovascular, and immune systems is highlighted to illustrate the contributions of selective fluorescent probes to the study of these two important bioinorganic analytes. PMID:21675918

  16. Biocidal effects of silver and zinc oxide nanoparticles on the bioluminescent bacteria

    NASA Astrophysics Data System (ADS)

    Taran, M. V.; Starodub, N. F.; Katsev, A. M.; Guidotti, M.; Khranovskyy, V. D.; Babanin, A. A.; Melnychuk, M. D.

    2013-11-01

    The effect of silver and zinc oxide nanoparticles in combination with alginate on bioluminescent Photobacterium leiognathi Sh1 bacteria was investigated. Silver nanoparticles were found to be more toxic than zinc oxide nanoparticles on bioluminescent bacteria. The nanoparticles and their ions released results in the same effect, however, it was absent in combination with alginate. The effective inhibiting concentration (EC50) for silver nanoparticles was found about 0.3 - 0.4 μg mL-1, which was up to two times larger then for zinc oxide nanoparticles. The absence of sodium chloride in the tested media prevented the formation of colloidal particles of larger size and the effective inhibition concentrations of metal derivatives were lower than in the presence of sodium chloride.

  17. The role of intracellular zinc in chromium(VI)-induced oxidative stress, DNA damage and apoptosis.

    PubMed

    Rudolf, Emil; Cervinka, Miroslav

    2006-09-25

    Several studies have demonstrated that zinc is required for the optimal functioning of the skin. Changes in intracellular zinc concentrations have been associated with both improved protection of skin cells against various noxious factors as well as with increased susceptibility to external stress. Still, little is known about the role of intracellular zinc in hexavalent chromium (Cr(VI))-induced skin injury. To address this question, the effects of zinc deficiency or supplementation on Cr(VI)-induced cytotoxicity, oxidative stress, DNA injury and cell death were investigated in human diploid dermal fibroblasts during 48 h. Zinc levels in fibroblasts were manipulated by pretreatment of cells with 100 microM ZnSO4 and 4 or 25 microM zinc chelator TPEN. Cr(VI) (50, 10 and 1 microM) was found to produce time- and dose-dependent cytotoxicity resulting in oxidative stress, suppression of antioxidant systems and activation of p53-dependent apoptosis which is reported for the first time in this model in relation to environmental Cr(VI). Increased intracellular zinc partially attenuated Cr(VI)-induced cytotoxicity, oxidative stress and apoptosis by enhancing cellular antioxidant systems while inhibiting Cr(VI)-dependent apoptosis by preventing the activation of caspase-3. Decreased intracellular zinc enhanced cytotoxic effects of all the tested Cr(VI) concentrations, leading to rapid loss of cell membrane integrity and nuclear dispersion--hallmarks of necrosis. These new findings suggest that Cr(VI) as a model environmental toxin may damage in deeper regions residing skin fibroblasts whose susceptibility to such toxin depends among others on their intracellular Zn levels. Further investigation of the impact of Zn status on skin cells as well as any other cell populations exposed to Cr(VI) or other heavy metals is warranted.

  18. EXAMINATION OF THE OXIDATION PROTECTION OF ZINC COATINGS FORMED ON COPPER ALLOYS AND STEEL SUBSTRATES

    SciTech Connect

    Papazoglou, M.; Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.

    2010-01-21

    The exposure of metallic components at aggressive high temperature environments, usually limit their usage at similar application because they suffer from severe oxidation attack. Copper alloys are used in a wide range of high-quality indoor and outdoor applications, statue parts, art hardware, high strength and high thermal conductivity applications. On the other hand, steel is commonly used as mechanical part of industrial set outs or in the construction sector due to its high mechanical properties. The aim of the present work is the examination of the oxidation resistance of pack cementation zinc coatings deposited on copper, leaded brass and steel substrates at elevated temperature conditions. Furthermore, an effort made to make a long-term evaluation of the coated samples durability. The oxidation results showed that bare substrates appear to have undergone severe damage comparing with the coated ones. Furthermore, the mass gain of the uncoated samples was higher than this of the zinc covered ones. Particularly zinc coated brass was found to be more resistant to oxidation conditions in which it was exposed as it has the lower mass gain as compared to the bare substrates and zinc coated copper. Zinc coated steel was also proved to be more resistive than the uncoated steel.

  19. Teucrium polium L. extract adsorbed on zinc oxide nanoparticles as a fortified sunscreen

    PubMed Central

    Ansari, Mehdi; Sharififar, Fariba; Kazemipour, Maryam; Sarhadinejad, Zarrin; Mahdavi, Hamid

    2013-01-01

    Introduction: Zinc oxide nanoparticles (ZnOn) have been used as carriers and sun-protecting agents for Teucrium polium L. extract to enhance sun protection. ZnOn was synthesized by hydrolyzing zinc acetate using sodium hydroxide with mean particle diameter less than 500 nm. Materials and Methods: Top flowerings of T. polium L. were extracted by percolation method with petroleum ether, chloroform, and 80% methanol consecutively. Methanolic extract was lyophilized and used as a flavonoid-rich fraction. Sunscreen was prepared by the reconstitution of 0.5 g of the lyophilized extract in water and mixing with 0.5 to 2 g zinc-oxide (ZnO). Sun protection factor (SPF) of the aqueous extract of T. polium, the prepared gel, as well as the zinc oxide suspension alone and in combination with each other was determined spectrophotometrically based on a modified Transpore® tape method. Results and Conclusion: Obtained results showed that the T. polium extract has a wide band of ultraviolet radiation (UV) spectrum absorption ranging from 250 nm to 380 nm. SPF of the combination product in the ultraviolet B (UVB) area was greater than 80, revealing a synergistic action between ZnO and T. polium. The adsorption of flavonoids of T. polium on Zinc-oxide nanoparticles (ZnOn) slowed down their release thereby lengthening their persistence on the skin and contributing to further duration of action. PMID:24350038

  20. Development of zinc oxide nanoparticle by sonochemical method and study of their physical and optical properties

    NASA Astrophysics Data System (ADS)

    Khan, Samreen Heena; Suriyaprabha, R.; Pathak, Bhawana; Fulekar, M. H.

    2016-04-01

    With the miniaturization of crystal size, the fraction of under-coordinated surface atoms becomes dominant, and hence, materials in the nano-regime behave very differently from the similar material in a bulk. Zinc oxide (ZnO), particularly, exhibits extraordinary properties such as a wide direct band gap (3.37 eV), large excitation binding energy (60 meV), low refractive index (1.9), stability to intense ultraviolet (UV) illumination, resistance to high-energy irradiation, and lower toxicity as compared to other semiconductors. This very property makes Zinc Oxide a potential candidate in many application fields, particularly as a prominent semiconductor. Zinc Oxide plays a significant role in many technological advances with its application in semiconductor mediated photocatalytic processes and sensor, solar cells and others. In present study, Zinc Oxide (ZnO) has been synthesized using three different precursors by sonochemical method. Zinc Acetate Dihydrate, Zinc Nitrate Hexahydrate and Zinc Sulphate Heptahydrate used as a precursor for the synthesis process. The synthesized ZnO nanoparticle has been found under the range of ˜50 nm. Zinc oxide nanoparticles were characterized using different characterizing tools. The as-synthesized ZnO was characterized by Fourier Transform-Infrared Spectroscopy (FT-IR) for the determination of functional group; Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS) for Morphology and elemental detection respectively, Transmission Electron Microscopy for Particle size distribution and morphology and X-Ray Diffraction (XRD) for the confirmation of crystal structure of the nanomaterial. The optical properties of the ZnO were examined by UV-VIS spectroscopy equipped with Diffuse Reflectance spectroscopy (DRS) confirmed the optical band gap of ZnO-3 around 3.23 eV resembles with the band gap of bulk ZnO (3.37eV). The TEM micrograph of the as-synthesized material showed perfectly spherical shaped

  1. Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

    NASA Technical Reports Server (NTRS)

    Gourrier, S.; Mircea, A.; Simondet, F.

    1980-01-01

    The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

  2. Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode

    SciTech Connect

    Klochko, N. P. Khrypunov, G. S.; Myagchenko, Yu. O.; Melnychuk, E. E.; Kopach, V. R.; Klepikova, E. S.; Lyubov, V. M.; Kopach, A. V.

    2012-06-15

    Zinc oxide nanostructures are objects of study in the field of optoelectronics, solar power engineering, nanosensorics, and catalysis. For the purpose of the controlled growth of one-dimensional submicrometer zinc oxide structures in the pulsed electrodeposition mode, the effect of the pulse electrolysis parameters on the morphology of ZnO layers, their optical properties, and structural and substructural characteristics is determined using X-ray diffraction, optical spectrophotometry, and atomic-force microscopy. The possibility of fabricating arrays of ZnO nanowires with different geometrical shapes, perpendicular to the substrate surface, by varying the frequency of cathode-substrate potential pulses is shown.

  3. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  4. Eco-friendly approach towards green synthesis of zinc oxide nanocrystals and its potential applications.

    PubMed

    Velmurugan, Palanivel; Park, Jung-Hee; Lee, Sang-Myeong; Yi, Young-Joo; Cho, Min; Jang, Jum-Suk; Myung, Hyun; Bang, Keuk-Soo; Oh, Byung-Taek

    2016-09-01

    In the present study, we investigated a novel green route for synthesis of zinc oxide (ZnO) nanocrystals using Prunus × yedoensis Matsumura leaf extract as a reducing agent without using any surfactant or external energy. Standard characterization studies were carried out to confirm the obtained product using UV-Vis spectra, SEM-EDS, FTIR, TEM, and XRD. In addition, the synthesized ZnO nanocrystals were coated onto fabric and leather samples to study their bacteriostatic effect against odor-causing bacteria Brevibacterium linens and Staphylococcus epidermidis. Zinc oxide nanocrystal-coated fabric and leather showed good activity against both bacteria.

  5. Synthesis, characterization and antimicrobial applications of zinc oxide nanoparticles loaded gum acacia/poly(SA) hydrogels.

    PubMed

    Bajpai, S K; Jadaun, Mamta; Tiwari, Seema

    2016-11-20

    In this work, zinc oxide nanoparticles were synthesized in-situ within the gum acacia/poly (acrylate) hydrogel network using hydrothermal approach. The synthesized zinc oxide nanoparticles were characterized by Surface plasmon resonance (SPR), X-Ray diffraction (XRD) analysis, Fourier transform infrared (FTIR) spectroscopy and Scanning electron microscopy (SEM). The water absorption behavior of ZnO/GA/poly(SA) hydrogels was investigated in the phosphate buffer saline (PBS) of pH 7.4 at 37°C. The water uptake data were analyzed with the help of various kinetic models. Finally, the antimicrobial action of nanocomposites was studied using E. coli as model bacteria.

  6. Doped and Undoped Zinc Oxide Nanostructures on Silicon Wafers

    NASA Astrophysics Data System (ADS)

    Chubenko, E.; Bondarenko, V.

    2013-05-01

    We present results of hydrothermal deposition of undoped and Al doped ZnO nanocrystals on nanocrystalline silicon. ZnO nanocrystals were deposited in an equimolar zinc nitride and hexamethylenetetramine solution. Aluminum nitride was used as Al precursor. The difference of the morphology of doped and undoped ZnO nanocrystals is discussed. Photoluminescence properties of the obtained nanocrystals are shown.

  7. Migration of point defects and a defect pair in zinc oxide using the dimer method

    SciTech Connect

    Chen, Dong; Gao, Fei; Dong, Mingdong; Liu, Bo

    2012-09-24

    The migration mechanism and the minimum energy path of vacancies, interstitials and an interstitial-vacancy pair in zinc oxide have been studied by the dimer method. The in-plane and out-of-plane migrations of zinc and oxygen vacancies are found to be anisotropic. The kick-out mechanism is energetically preferred to zinc and oxygen interstitials that can easily migrate through the ZnO crystal lattice. In addition, the migration process of an interstitial-vacancy pair as a complex of an octahedral oxygen interstitial and a zinc vacancy is dominated by an oxygen interstitial/zinc vacancy successive migration. The energy barriers indicate that the existence of oxygen interstitial in the defect pair can promote the mobility of zinc vacancy, whereas the migration of oxygen interstitial is slowed down due to the presence of zinc vacancy. In the end, we show a possible migration path of the interstitial-vacancy pair that can be dissociated through a set of displacement movements.

  8. Delamination and solvothermal decomposition of layered zinc hydroxysalt: Formation of bimodal zinc oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Machado, Jyothi; Ravishankar, N.; Rajamathi, Michael

    2010-08-01

    Dodecylsulphate-intercalated zinc hydroxysalt, Zn 5(OH) 8(DS) 2·mH 2O delaminates to give monolayer colloidal dispersions in alcohols such as 1-butanol and ethylene glycol. The extent of delamination and the stability of the colloidal dispersion are comparable to those of layered double hydroxides. The solvothermal decomposition of the colloidal dispersion of the hydroxysalt in ethylene glycol yields a bimodal ZnO having a nanotubular structure decorated with nanosheets.

  9. Parameters of oxidative stress variation depending on the concentration of inorganic zinc compounds

    PubMed Central

    Grigorescu, R; Gruia, MI; Nacea, V; Nitu, C

    2015-01-01

    Zinc deficiency is a problem faced by a large number of people, a U.S. study showing that only 46% of the population aged over 71 years has the best amount of zinc in the body. Due to the very complex role of zinc deficiency in this trace, it can occur through a variety of symptoms affecting multiple body functions. Zinc was demonstrated to have the ability to neutralize free radicals protecting the body from the harmful effects of these effects, ultimately leading to atherosclerosis and cardiovascular disease derived from premature aging, the immune and immune disorders and increased risk of cancer. The purpose of the paper is to identify the role of antioxidant systems, with Zn2+ ions in the center of defense and decrease oxidative stress in dynamic interaction with malignant transformed cells. PMID:26664468

  10. Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

    NASA Astrophysics Data System (ADS)

    Chen, Zhuofa; Han, Dedong; Zhao, Nannan; Wu, Jing; Cong, Yingying; Dong, Junchen; Zhao, Feilong; Zhang, Shengdong; Zhang, Xing; Wang, Yi; Liu, Lifeng

    2015-04-01

    By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204 cm2 V-1 s-1, a steep subthreshold slope of 219 mV/dec, a low threshold voltage of 0.8 V, and a high on-off current ratio of 4.3 × 107. A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays.

  11. Thermal non-oxidative aromatization of light alkanes catalyzed by gallium nitride.

    PubMed

    Li, Lu; Mu, Xiaoyue; Liu, Wenbo; Kong, Xianghua; Fan, Shizhao; Mi, Zetian; Li, Chao-Jun

    2014-12-15

    The thermal catalytic activity of GaN in non-oxidative alkane dehydroaromatization has been discovered for the first time. The origin of the catalytic activity was studied experimentally and theoretically. Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity. The catalyst is highly robust and can be used repeatedly without noticeable deactivation.

  12. Novel synthetic methodology for controlling the orientation of zinc oxide nanowires grown on silicon oxide substrates

    NASA Astrophysics Data System (ADS)

    Cho, Jinhyun; Salleh, Najah; Blanco, Carlos; Yang, Sungwoo; Lee, Chul-Jin; Kim, Young-Woo; Kim, Jungsang; Liu, Jie

    2014-03-01

    This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron diffraction patterns using a transmission electron microscope (TEM). This study obviously suggests that metallic impurities incorporated into the ZnO nanocrystal seeds are one of the factors that generates the misaligned ZnO nanowires. This method also enables the use of silicon oxide substrates for the growth of vertically aligned nanowires, making ZnO nanostructures compatible with widely used silicon fabrication technology.This study presents a simple method to reproducibly obtain well-aligned vertical ZnO nanowire arrays on silicon oxide (SiOx) substrates using seed crystals made from a mixture of ammonium hydroxide (NH4OH) and zinc acetate (Zn(O2CCH3)2) solution. In comparison, high levels of OH- concentration obtained using NaOH or KOH solutions lead to incorporation of Na or K atoms into the seed crystals, destroying the c-axis alignment of the seeds and resulting in the growth of misaligned nanowires. The use of NH4OH eliminates the metallic impurities and ensures aligned nanowire growth in a wide range of OH- concentrations in the seed solution. The difference of crystalline orientations between NH4OH- and NaOH-based seeds is directly observed by lattice-resolved images and electron

  13. Heat-sterilized silver oxide-zinc cells: Cycle life studies

    NASA Technical Reports Server (NTRS)

    Arms, J. T.

    1973-01-01

    A JPL study was conducted to evaluate the cell design parameters that contribute to the cycle life of sealed, heat-sterilized silver oxide-zinc cells. Test cells having a rated capacity of 4.2 A-h were fabricated using zinc oxide electrodes prepared by the sintered Teflon process. Two separator variations were evaluated, one having acrylic acid and the other methacrylic acid grafted to irradiated polyethylene film. Significant results of this study include the following: (1) cycle life in excess of 300 cycles was attained; (2) a zinc oxide/silver stoichiometric ratio of 1.5 resulted in greater cycle life than a ratio of 1.1, and similar cycle life to cells having a ratio of 2; (3) cells having methacrylic acid grafted separators suffered somewhat less in capacity loss due to zinc electrode shape change than cells having acrylic acid type; (4) use of acrylic acid grafted separators was slightly superior to the methacrylic acid type in respect to silver penetration; and (5) the inclusion of a layer of potassium titanate paper adjacent to the zinc electrodes resulted in cells that achieved higher cycle life before any of the group failed than that reached by cells of any other construction.

  14. Protective effects of zinc on oxidative stress enzymes in liver of protein-deficient rats.

    PubMed

    Sidhu, Pardeep; Garg, M L; Dhawan, D K

    2005-01-01

    Persons afflicted with protein malnutrition are generally deficient in a variety of essential micronutrients like zinc, copper, iron, and selenium, which in turn affects number of metabolic processes in the body. To evaluate the protective effects of zinc on the enzymes involved in oxidative stress induced in liver of protein-deficient rats, the current study was designed. Zinc sulfate at a dose level of 227 mg/L zinc in drinking water was administered to female Sprague-Dawley normal control as well as protein-deficient rats for a total duration of 8 weeks. The effects of zinc treatment in conditions of protein deficiency were studied on rat liver antioxidant enzymes, which included catalase, glutathione peroxidase (GPx), glutathione reductase (GR), superoxide dismutase (SOD), glutathione reduced (GSH), and glutathione-S-transferase (GST). Protein deficiency in normal rats resulted in a significant increase in hepatic activities of catalase, glutathione peroxidase, glutathione reductase, and glutathione-S-transferase and the levels of lipid peroxidation. A significant inhibition in the levels of reduced glutathione and the enzyme activity of superoxide dismutase has been observed after protein deficiency in normal rats. Interestingly, Zn treatment to protein-deficient animals lowered already raised activity catalase, glutathione peroxidase, and glutathione-S-transferase and levels of lipid peroxidation to significant levels when compared to protein-deficient animals. Also, Zn treatment to the protein-deficient animals resulted in a significant elevation in the levels of GSH and SOD activity as compared to their respective controls, thereby indicating its effectiveness in regulating their levels in adverse conditions. It has also been observed that concentrations of zinc, copper, iron, and selenium were found to be decreased significantly in protein-deficient animals. However, the levels of these elements came back to within normal limits when zinc was administrated

  15. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.

    PubMed

    Zhang, Jun; Zhang, Lide; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2005-01-13

    Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.

  16. Chlorine sensing properties of zinc oxide resistive gas sensor doped with platinum

    NASA Astrophysics Data System (ADS)

    Fiedot, M.; Suchorska-Woźniak, P.; Rac, O.; Nawrot, W.; Teterycz, H.

    2016-11-01

    In presented studies resistive chlorine gas sensor with gas sensitive layer in the form of zinc oxide microrods doped with platinum was developed. The growth of active layer was carried out in water solution containing zinc nitrate (V), hexamethylenetetramine and chloroplatinic acid using the chemical bath deposition method. The structure and morphology of obtained sensors was characterized by scanning electron microscope (SEM) and energy-dispersive X-ray spectroscopy (EDX). To determine the chlorine gas sensing properties Temperature-Stimulated Conductance method (TSC) was used. During the measurements sensor was tested in a reference atmosphere and an atmosphere with 2, 5 or 8 ppm of chlorine. Obtained results have shown that zinc oxide microrods doped with platinum were obtained. TSC measurements showed that developed sensor allows to detect chlorine with very good sensitivity.

  17. Nanocrystalline zinc oxide: Pyrolytic synthesis and spectroscopic characteristics

    SciTech Connect

    Demyanets, L. N. Li, L. E.; Lavrikov, A. S.; Nikitin, S. V.

    2010-01-15

    Nanocrystalline and microcrystalline ZnO powders are synthesized by the pyrolysis of organic zinc salts in the presence of a reducing catalyst represented by a porous cellulose carrier. The specimens obtained are characterized by X-ray powder diffraction, energy dispersive analysis, scanning electron microscopy, and pulse cathodoluminescence. Lasing characteristics of the specimens are studied. The synthesis conditions, under which specimens with the crystallite morphology optimal for a low-threshold lasing are obtained, are found.

  18. Nanocrystalline zinc oxide: Pyrolytic synthesis and spectroscopic characteristics

    NASA Astrophysics Data System (ADS)

    Demyanets, L. N.; Li, L. E.; Lavrikov, A. S.; Nikitin, S. V.

    2010-01-01

    Nanocrystalline and microcrystalline ZnO powders are synthesized by the pyrolysis of organic zinc salts in the presence of a reducing catalyst represented by a porous cellulose carrier. The specimens obtained are characterized by X-ray powder diffraction, energy dispersive analysis, scanning electron microscopy, and pulse cathodoluminescence. Lasing characteristics of the specimens are studied. The synthesis conditions, under which specimens with the crystallite morphology optimal for a low-threshold lasing are obtained, are found.

  19. [Zinc oxide phosphate cement studies on the usefulness of Firmat].

    PubMed

    Glockmann, E; Glockmann, I; Hörenz, D; Lange, G; Reichardt, R; Schwarzburg, G

    1976-01-01

    The aim of the present investigations was to evaluate the Firmat zinc oxyphosphate cement in comparison with other brands, especially Adhesor normalhartend. The results obtained show that Firmat is a fast-setting phosphate cement which is not suited for polyhedral cavity linings. Time and material-consuming reworking is necessary. For temporary fillings, a temporary filling material should be used which is sufficiently solid, but easier to remove.

  20. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  1. The cytotoxic effects of titanium oxide and zinc oxide nanoparticles oh Human Cervical Adenocarcinoma cell membranes

    NASA Astrophysics Data System (ADS)

    Mironava, Tatsiana; Applebaum, Ariella; Applebaum, Eliana; Guterman, Shoshana; Applebaum, Kayla; Grossman, Daniel; Gordon, Chris; Brink, Peter; Wang, H. Z.; Rafailovich, Miriam

    2013-03-01

    The importance of titanium dioxide (TiO2) and zinc oxide (ZnO), inorganic metal oxides nanoparticles (NPs) stems from their ubiquitous applications in personal care products, solar cells and food whitening agents. Hence, these NPs come in direct contact with the skin, digestive tracts and are absorbed into human tissues. Currently, TiO2 and ZnO are considered safe commercial ingredients by the material safety data sheets with no reported evidence of carcinogenicity or ecotoxicity, and do not classify either NP as a toxic substance. This study examined the direct effects of TiO2 and ZnO on HeLa cells, a human cervical adenocarcinonma cell line, and their membrane mechanics. The whole cell patch-clamp technique was used in addition to immunohistochemistry staining, TEM and atomic force microscopy (AFM). Additionally, we examined the effects of dexamethasone (DXM), a glucocorticoid steroid known to have an effect on cell membrane mechanics. Overall, TiO2 and ZnO seemed to have an adverse effect on cell membrane mechanics by effecting cell proliferation, altering cellular structure, decreasing cell-cell adhesion, activating existing ion channels, increasing membrane permeability, and possibly disrupting cell signaling.

  2. Cobalt-phosphate-assisted photoelectrochemical water oxidation by arrays of molybdenum-doped zinc oxide nanorods.

    PubMed

    Lin, Yan-Gu; Hsu, Yu-Kuei; Chen, Ying-Chu; Lee, Bing-Wei; Hwang, Jih-Shang; Chen, Li-Chyong; Chen, Kuei-Hsien

    2014-09-01

    We report the first demonstration of cobalt phosphate (Co-Pi)-assisted molybdenum-doped zinc oxide nanorods (Zn(1-x)Mo(x)O NRs) as visible-light-sensitive photofunctional electrodes to fundamentally improve the performance of ZnO NRs for photoelectrochemical (PEC) water splitting. A maximum photoconversion efficiency as high as 1.05% was achieved, at a photocurrent density of 1.4 mA cm(-2). More importantly, in addition to achieve the maximum incident photon to current conversion efficiency (IPCE) value of 86%, it could be noted that the IPCE of Zn(1-x)Mo(x)O photoanodes under monochromatic illumination (450 nm) is up to 12%. Our PEC performances are comparable to those of many oxide-based photoanodes in recent reports. The improvement in photoactivity of PEC water splitting may be attributed to the enhanced visible-light absorption, increased charge-carrier densities, and improved interfacial charge-transfer kinetics due to the combined effect of molybdenum incorporation and Co-Pi modification, contributing to photocatalysis. The new design of constructing highly photoactive Co-Pi-assisted Zn(1-x)Mo(x)O photoanodes enriches knowledge on doping and advances the development of high-efficiency photoelectrodes in the solar-hydrogen field.

  3. Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties

    NASA Astrophysics Data System (ADS)

    Liu, Lizhu; Chen, Yiqing; Guo, Linliang; Guo, Taibo; Zhu, Yunqing; Su, Yong; Jia, Chong; Wei, Meiqin; Cheng, Yinfen

    2011-11-01

    The novel two-dimensional (2-D) Ga-doped In2O3 nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu-Sn alloy as the substrates. Two basic parts construct this leaf-like nanostructure: a long central trunk and two tapered nanoribbons in symmetric distribution in relation to the trunk. The Ga-In-O alloy particles are located at or close to the tips of the central trunks and serve as catalysts for the central trunk growth by the self-catalytic vapor-liquid-solid (VLS) mechanism. And the homoepitaxial growth of tapered nanoribbon on the surface of the central trunk can be explained by vapor-solid (VS) mechanism. The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3 transparent conducting oxide (TCO) detected two blue peaks located at 432 nm and 481 nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs). The successful preparation of this novel 2-D Ga-doped In2O3 nanoleaves not only enriches the synthesis of TCO materials, but also provides new blocks in future architecture of functional nano-devices.

  4. Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

    NASA Astrophysics Data System (ADS)

    Wilkins, S. J.; Paskova, T.; Ivanisevic, A.

    2013-08-01

    In-situ functionalization of polar GaN was performed by adding cysteamine to a phosphoric acid etchant in order to study its effect on photoluminescence and oxide formation on the surfaces. The functionalization was characterized by atomic force microscopy, x-ray photoelectron spectroscopy, photoluminescence (PL), and water contact angle measurements. Two sets of polar GaN samples with different dislocation densities were evaluated, thin GaN layers residing on sapphire and thick free-standing GaN separated from sapphire substrate aiming to reveal the effect of material quality on in-situ functionalization. The addition of cysteamine to the phosphoric acid solution was found to result in: (i) decreased surface roughness, (ii) no change to hydrophobicity, (iii) decreased oxygen content especially at high-temperature treatments. The effect of the in-situ functionalization on the PL efficiency was more pronounced in the free-standing sample than in the film residing on the sapphire, which was attributed to a higher crystal quality free from strain.

  5. An innovative zinc oxide-coated zeolite adsorbent for removal of humic acid

    EPA Science Inventory

    Zinc oxide (ZnO)-coated zeolite adsorbents were developed by both nitric acid modification and Zn(NO3)2•6H2O functionalization of zeolite. The developed adsorbents were used for the removal of humic acid (HA) from aqueous solutions. The adsorption capacity of the adsorbents at 21...

  6. Vapor-phase growth of transparent zinc oxide ceramics with c -axis orientation

    SciTech Connect

    Noritake, F.; Yamamoto, N.; Horiguchi, Y. ); Fujitsu, S.; Koumoto, K. ); Yanagida, H. )

    1991-01-01

    Large transparent specimens of polycrystalline zinc oxide with c-axis orientation have been prepared by the vapor transport method. Optical transmittance is 80% to 90% at 800 nm. X-ray diffraction peaks from faces other than (001) are negligible.

  7. Laser forming of structures of zinc oxide on a surface of products from copper alloys

    NASA Astrophysics Data System (ADS)

    Abramov, D. V.; Gorudko, T. N.; Koblov, A. N.; Nogtev, D. S.; Novikova, O. A.

    Laser formation of a protective zinc oxide layer on a surface of products from copper alloys is present. This layer is formed with using of carbon nanotubes. Destructions of the basic material are avoided or minimized at laser nanostructuring of product surfaces. Such laser processing can be made repeatedly. Offered covering have self-clearing and water-repellent properties.

  8. Formulation of nano-zinc oxide into biocomposite beads for dye decolorization

    NASA Astrophysics Data System (ADS)

    Elkady, M. F.; Hassan, H. Shokry; El-Shazly, A. H.

    2015-03-01

    Zinc oxide nano-powder was prepared using sol-gel technique to be encapsulated onto polymeric blend composed from alginate and polyvinyl alcohol to fabricate novel bio-composite beads of nano-zinc oxide. The XRD patterns of both zinc oxide nano-powder and its polymeric hybrid were crystalline in their nature. The FTIR analysis of the fabricated ZnO polymeric hybrid confirms the binding between zinc oxide and the polymeric matrix. The BET analysis demonstrated that the calculated specific surface area of the formulated ZnO beads that equal to 22.8 m2/g is comparatively less than that of the free ZnO nano-powdered that equivalent to 64.9 m2/g. The thermal stability of ZnO nano-powdered dramatically decreased with its immobilization into the polymeric alginate and PVA matrix. The formulated beads had very strong mechanical strength and they are difficult to be broken up to 1500rpm. Moreover, this hybrid beads are chemically stable at the acidic media. The formulated ZnO hybrid beads verified to be good adsorbent material for C.I basic blue 41 (CB41).

  9. Biosynthesis of silver and zinc oxide nanoparticles using Pichia fermentans JA2 and their antimicrobial property

    NASA Astrophysics Data System (ADS)

    Chauhan, Ritika; Reddy, Arpita; Abraham, Jayanthi

    2015-01-01

    The development of eco-friendly alternative to chemical synthesis of metal nanoparticles is of great challenge among researchers. The present study aimed to investigate the biological synthesis, characterization, antimicrobial study and synergistic effect of silver and zinc oxide nanoparticles against clinical pathogens using Pichia fermentans JA2. The extracellular biosynthesis of silver and zinc oxide nanoparticles was investigated using Pichia fermentans JA2 isolated from spoiled fruit pulp bought in Vellore local market. The crystalline and stable metallic nanoparticles were characterized evolving several analytical techniques including UV-visible spectrophotometer, X-ray diffraction pattern analysis and FE-scanning electron microscope with EDX-analysis. The biosynthesized metallic nanoparticles were tested for their antimicrobial property against medically important Gram positive, Gram negative and fungal pathogenic microorganisms. Furthermore, the biosynthesized nanoparticles were also evaluated for their increased antimicrobial activities with various commercially available antibiotics against clinical pathogens. The biosynthesized silver nanoparticles inhibited most of the Gram negative clinical pathogens, whereas zinc oxide nanoparticles were able to inhibit only Pseudomonas aeruginosa. The combined effect of standard antibiotic disc and biosynthesized metallic nanoparticles enhanced the inhibitory effect against clinical pathogens. The biological synthesis of silver and zinc oxide nanoparticles is a novel and cost-effective approach over harmful chemical synthesis techniques. The metallic nanoparticles synthesized using Pichia fermentans JA2 possess potent inhibitory effect that offers valuable contribution to pharmaceutical associations.

  10. Bio-inspired band gap engineering of zinc oxide by intracrystalline incorporation of amino acids.

    PubMed

    Brif, Anastasia; Ankonina, Guy; Drathen, Christina; Pokroy, Boaz

    2014-01-22

    Bandgap engineering of zinc oxide semiconductors can be achieved using a bio-inspired method. During a bioInspired crystallization process, incorporation of amino acids into the crystal structure of ZnO induces lattice strain that leads to linear bandgap shifts. This allows for fine tuning of the bandgap in a bio-inspired route.

  11. Laser energy density, structure and properties of pulsed-laser deposited zinc oxide films

    NASA Astrophysics Data System (ADS)

    Tsoutsouva, M. G.; Panagopoulos, C. N.; Kompitsas, M.

    2011-05-01

    Zinc oxide thin films were deposited on soda lime glass substrates by pulsed laser deposition in an oxygen-reactive atmosphere at 20 Pa and a constant substrate temperature at 300 °C. A pulsed KrF excimer laser, operated at 248 nm with pulse duration 10 ns, was used to ablate the ceramic zinc oxide target. The structure, the optical and electrical properties of the as-deposited films were studied in dependence of the laser energy density in the 1.2-2.8 J/cm 2 range, with the aid of X-ray Diffraction, Atomic Force Microscope, Transmission Spectroscopy techniques, and the Van der Pauw method, respectively. The results indicated that the structural and optical properties of the zinc oxide films were improved by increasing the laser energy density of the ablating laser. The surface roughness of the zinc oxide film increased with the decrease of laser energy density and both the optical bang gap and the electrical resistivity of the film were significantly affected by the laser energy density.

  12. Ternary and coupled binary zinc tin oxide nanopowders: Synthesis, characterization, and potential application in photocatalytic processes

    SciTech Connect

    Ivetić, T.B.; Finčur, N.L.; Đačanin, Lj. R.; Abramović, B.F.; Lukić-Petrović, S.R.

    2015-02-15

    Highlights: • Mechanochemically synthesized nanocrystalline zinc tin oxide (ZTO) powders. • Photocatalytic degradation of alprazolam in the presence of ZTO water suspensions. • Coupled binary ZTO exhibits enhanced photocatalytic activity compared to ternary ZTO. - Abstract: In this paper, ternary and coupled binary zinc tin oxide nanocrystalline powders were prepared via simple solid-state mechanochemical method. X-ray diffraction, scanning electron microscopy, Raman and reflectance spectroscopy were used to study the structure and optical properties of the obtained powder samples. The thermal behavior of zinc tin oxide system was examined through simultaneous thermogravimetric-differential scanning calorimetric analysis. The efficiencies of ternary (Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3}) and coupled binary (ZnO/SnO{sub 2}) zinc tin oxide water suspensions in the photocatalytic degradation of alprazolam, short-acting anxiolytic of the benzodiazepine class of psychoactive drugs, under UV irradiation were determined and compared with the efficiency of pure ZnO and SnO{sub 2}.

  13. An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayers

    SciTech Connect

    Chu, Manh Hung; Tian, Liang; Chaker, Ahmad; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon D.; Ciatto, Gianluca

    2016-09-07

    The growth of zinc oxide thin films by atomic layer deposition is believed to proceed through an embryonic step in which three-dimensional nanoislands form and then coalesce to trigger a layer-by-layer growth mode. This transient initial state is characterized by a poorly ordered atomic structure, which may be inaccessible by X-ray diffraction techniques. In this work, we apply X-ray absorption spectroscopy in situ to address the local structure of Zn after each atomic layer deposition cycle, using a custom-built reactor mounted at a synchrotron beamline, and we shed light on the atomistic mechanisms taking place during the first stages of the growth. We find that such mechanisms are surprisingly different for zinc oxide growth on amorphous (silica) and crystalline (sapphire) substrate. Ab initio simulations and quantitative data analysis allow the formulation of a comprehensive growth model, based on the different effects of surface atoms and grain boundaries in the nanoscale islands, and the consequent induced local disorder. From a comparison of these specttoscopy results with those from X-ray diffraction reported recently, we observe that the final structure of the zinc oxide nanolayers depends strongly on the mechanisms taking place during the initial stages of growth. The approach followed here for the case of zinc oxide will be of general interest for characterizing and optimizing the growth and properties of more complex nanostructures.

  14. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction.

  15. The synthesis of zinc oxide nanoparticles from zinc acetylacetonate hydrate and 1-butanol or isobutanol.

    PubMed

    Ambrozic, Gabriela; Skapin, Sreco D; Zigon, Majda; Orel, Zorica Crnjak

    2010-06-15

    ZnO nanoparticles of different sizes, from 20 to 200 nm in length, and morphologies, nanorods and coral-like structures, were synthesized via a simple one-pot synthesis by refluxing an oversaturated solution of zinc acetylacetonate hydrate in 1-butanol and isobutanol. On the basis of (1)H and (13)C NMR experiments, the reactions in both alcohols were found to proceed via the alcoholytic C-C cleavage of the acetylacetonate ligand, followed by the hydrolytic formation of the reactive Zn-OH intermediate from the water molecules present in the precursor hydrate species and/or those released during the condensation cycle. The zinc acetylacetonate conversion into ZnO in isobutanol is significantly slower than in the case when 1-butanol was used as both the medium and the reagent. FE-SEM studies showed that in 1-butanol the growth of the rod-shaped particles occurs via the agglomeration of ZnO primary particles that are less than 10 nm in size. The morphology of the particles formed in the isobutanol is time dependent, with the final coral-like structures developing from initially formed bundle-like structures.

  16. Effect of solvents on the synthesis of nano-size zinc oxide and its properties

    SciTech Connect

    Kanade, K.G.; Kale, B.B. . E-mail: kbbb1@yahoo.com; Aiyer, R.C.; Das, B.K.

    2006-03-09

    The effect of the solvents on particle size and morphology of ZnO is investigated. The optical properties of nano ZnO were studied extensively. During this study, zinc oxalate was prepared in aqueous and organic solvents using zinc acetate and oxalic acid as precursors. The thermo-gravimetric analysis (TGA/DTA) showed formation of ZnO at 400 deg. C. Nano-size zinc oxide was obtained by thermal decomposition of aqueous and organic mediated zinc oxalate at 450 deg. C. The phase purity was confirmed by XRD and crystal size determined from transmission electron microscopy (TEM) was found to be 22-25 nm for the aqueous and 14 -17 nm in organic mediated ZnO. Scanning electron microscope (SEM) also revealed different nature of surfaces and microstructures for zinc oxide obtained in aqueous and organic solvents. The UV absorption spectra showed sharp absorption peaks with a blue shift for organic mediated ZnO, due to monodispersity and lower particle size. Sharp peaks and absence of any impurity peaks in photoluminescence spectra (PLS) complement the above observations.

  17. Radiation Stability of Zinc Oxide Pigment Modified by Zirconium Oxide and Aluminum Oxide Nanopowders

    SciTech Connect

    Mikhailov, M. M.; Neshchimenko, V. V.; Li Chundong

    2009-01-05

    The effect on the reflective spectra of heat treatment and modification of ZnO pigments by 1-30 wt.%ZrO{sub 2} and Al{sub 2}O{sub 3} nanoparticles has been investigated before and after irradiation by 100 keV protons with a fluence of 5x10{sup 15} cm{sup -2}. It is established that with the optimum concentration of 5 wt.% nanoparticles and the temperature of 800 deg. C a 20% increase in the radiation stability is observed for the modified ZnO pigment in comparison with the not modified pigment. The decrease of absorption in the modified pigments is determined by the decrease of the intensity of the absorption bands of the zinc vacancies (V{sub zn}{sup -}), oxygen vacancies (V{sub o}{sup +}) and donor-acceptor couples (V{sub zn}-{sup -}Zn{sub i}{sup 0})

  18. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

    NASA Astrophysics Data System (ADS)

    Wu, Shao-Hang; Zhang, Nan; Hu, Yong-Sheng; Chen, Hong; Jiang, Da-Peng; Liu, Xing-Yuan

    2015-10-01

    Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel. Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

  19. Synthesis and characterization of lanthanum doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Kumar, Vinod; Sonia, Suman, Kumar, Sacheen; Kumar, Dinesh

    2016-05-01

    La doped ZnO (Zn1-xLaxO, x = 0, 3, 6 and 9) were prepared via chemical co-precipitation method using Zinc Acetate, Lanthanum Acetate and Sodium Hydroxide at 50°C. Hydrate nanoparticles were annealed in air at 300°C for 3 hours. The synthesized samples have been characterized by powder X-ray diffraction and UV-Visiblespectrophotometer. The XRD measurement revealsthat the prepared nanoparticles have different microstructure without changing a hexagonal wurtzite structure. The result shows the change in nanoparticles size with the increment of lanthanum concentration for lower concentration for x = 0 to 6 and decreases at x = 9.

  20. Surface morphology and electrical transport of rapid thermal annealed chromium-doped indium zinc oxides: The influence of zinc interstitials and out-diffusion

    SciTech Connect

    Hsu, C. Y.

    2013-12-09

    We investigate the complex impedance (CI) spectra of chromium-doped indium zinc oxide (CIZO) films with different rapid thermal annealing (RTA) temperatures. The CI spectra drawn from the impedance contributions of Zn-O and In-O bondings in CIZO films were analyzed by two sets of parallel resistance and capacitance components in series. The result demonstrates that zinc interstitials controls electron concentration and transition of electrical transport from semiconducting to metallic. At higher RTA temperature, high-density zinc interstitial promotes Zn atom diffusion from the surface, modifying surface morphology.

  1. Investigation of reaction conditions on morphology and optical properties of Zinc Oxide Nanorods

    NASA Astrophysics Data System (ADS)

    Almodarresiyeh, H. A.; Abakshonok, A. V.; Agabekov, V. E.; Eryomin, A. N.; Shahab, S. N.

    2014-08-01

    Zinc oxide nanoparticles (ZnO NPs) were synthesized by precipitation method in the presence of various polymers. Rod shaped ZnO NPs (length ~ 1 micron) were obtained at 70 °C in a reaction medium containing 10-20 mM of zinc nitrate hexahydrate (Zn(NO3)2·6H2O), 0.05-0.1 mg/ml of polyethylenimine (PEI) and 20 mM of hexamethylenetetramine (HMT). Properties of ZnO NPs were characterized by fluorescence, UV-visible spectroscopy, atomic force and transmission electron microscopy.

  2. A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

    PubMed

    Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

    2011-01-01

    A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

  3. Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

    SciTech Connect

    Russo, V.; Ghidelli, M.; Gondoni, P.

    2014-02-21

    In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structures and morphologies and synthesized by pulsed laser deposition under different oxygen pressure conditions. The comparison of Raman spectra for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry, and doping. Moreover Raman measurements with three different excitation lines (532, 457, and 325 nm) point out a strong correlation between vibrational and electronic properties. This observation confirms the relevance of a multi-wavelength Raman investigation to obtain a complete structural characterization of advanced doped oxide materials.

  4. Characterization of zinc oxide thin film for pH detector

    NASA Astrophysics Data System (ADS)

    Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

    2017-03-01

    This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

  5. A Zinc Oxide Nanorod Ammonia Microsensor Integrated with a Readout Circuit on-a-Chip

    PubMed Central

    Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

    2011-01-01

    A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature. PMID:22247656

  6. Efficient inverted polymer solar cells based on conjugated polyelectrolyte and zinc oxide modified ITO electrode

    SciTech Connect

    Yuan, Tao; Zhu, Xiaoguang; Tu, Guoli; Zhou, Lingyu; Zhang, Jian

    2015-02-23

    Efficient inverted polymer solar cells (PSCs) were constructed by utilizing a conjugated polyelectrolyte PF{sub EO}SO{sub 3}Na and zinc oxide to modify the indium tin oxide (ITO) electrode. The ITO electrode modified by PF{sub EO}SO{sub 3}Na and zinc oxide possesses high transparency, increased electron mobility, smoothened surface, and lower work function. PTB7:PC{sub 71}BM inverted PSCs containing the modified ITO electrode achieved a high power conversion efficiency (PCE) of 8.49%, exceeding that of the control device containing a ZnO modified ITO electrode (7.48%). Especially, PCE-10:PC{sub 71}BM inverted polymer solar cells achieved a high PCE up to 9.4%. These results demonstrate a useful approach to improve the performance of inverted polymer solar cells.

  7. Contrasting the grain boundary-affected performance of zinc and indium oxide transparent conductors

    NASA Astrophysics Data System (ADS)

    Vai, A. T.; Rashidi, N.; Fang, Y.; Kuznetsov, V. L.; Edwards, P. P.

    2016-06-01

    Zinc oxide-based transparent conductors have long been advanced for their potential as low-cost, earth-abundant replacements for the indium oxide-based materials that currently dominate in practical applications. However, this potential has yet to be realized because of the difficulties in producing zinc oxide thin films with the necessary high levels of electrical conductivity and environmental stability that are readily achieved using indium oxide. To better understand the fundamental reasons for this, polycrystalline zinc and indium oxide thin films were prepared across a range of deposition temperatures using the technique of spray pyrolysis. Electrical transport measurements of these samples both as a function of temperature and UV irradiation were correlated with film morphology to illustrate that the different grain boundary behaviour of these two materials is one of the key reasons for their divergent performance. This is a critical challenge that must be addressed before any substantial increase in the adoption of ZnO-based transparent conductors can take place.

  8. Co-administration of meso 2,3-dimercaptosuccinic acid monoesters reduces arsenic concentration and oxidative stress in gallium arsenide exposed rats.

    PubMed

    Flora, Swaran J S; Bhatt, Kapil; Dwivedi, Nidhi; Pachauri, Vidhu; Kushwah, Pramod K

    2011-07-01

    1. Gallium arsenide (GaAs), a semiconductor, exerts toxicity as a result of its constitutive moieties; that is, gallium and arsenic that becomes dissociated after exposure. The present study focuses on reducing arsenic concentration from the target organs using monoesters of meso 2,3-dimercaptosuccinic acid (DMSA) either individually or in combination. 2. Animals were exposed to GaAs (0.0014 mol/kg, orally for 8 weeks) and then treated with monoisoamyl DMSA (MiADMSA), monocyclohexyl DMSA (MchDMSA) or monomethyl DMSA (MmDMSA) either individually (0.3 mmol/kg, orally) or in combination (0.15 mmol/kg each, orally) for five consecutive days. 3. GaAs exposure significantly inhibited blood δ-aminolevulinic acid dehydrogenase (ALAD), suggesting alterations in the heme synthesis pathway. Whereas a significant increase in blood, liver and kidney reactive oxygen species accompanied by an increase in lipid peroxidation points to the involvement of oxidative stress in GaAs toxicity. 4. GaAs also significantly disturbed glutathione metabolism. Hepatic and renal catalase activity decreased significantly, whereas hepatic and renal superoxide dismutase activity, as well as serum transaminases activity, showed marginal increase. Treatment with MiADMSA in combination with MchDMSA showed better therapeutic efficacy compared with other treatments in the aforementioned variables. 5. Co-administration of MiADMSA with MchDMSA provided better therapeutic effects, including reduction of arsenic burden, compared with all other treatments.

  9. Growth and properties of ultra-violet emitting aligned zinc oxide nanocones with hexagonal caps.

    PubMed

    Umar, Ahmad; Al Hajry, A; Al-Ghamdi, A A; Al-Heniti, S

    2010-10-01

    Ultraviolet-emitting, single-crystalline aligned zinc oxide (ZnO) nanocones with hexagonal caps were grown on silicon substrate via simple non-catalytic thermal evaporation process. High-purity metallic zinc powder and oxygen were used as source materials for zinc and oxygen, respectively. The detailed structural characterizations confirmed that the formed products are single-crystalline, possess a wurtzite hexagonal phase and grown along the c-axis direction. Raman-active optical-phonon E2(high) mode at 437 cm(-1) with sharp and strong UV emission at 385 nm in room-temperature photoluminescence (PL) spectrum demonstrated that the as-grown ZnO nanocones with hexagonal caps possess good-crystal quality with the excellent optical properties. Finally, a plausible growth mechanism for the formation of as-grown ZnO nanocones with hexagonal caps was also proposed.

  10. Chemism and kinetics of the oxidation of zinc-calcium oxysulfide

    NASA Astrophysics Data System (ADS)

    Gulyaeva, R. I.; Selivanov, E. N.; Mansurova, A. N.

    2013-05-01

    The sequence of phase transformations and the kinetics of the solid-phase (heating to 1273 K) oxidation of zinc-calcium oxysulfide CaZnSO with air are determined by thermodynamic, thermogravimetric, mass spectrometric, and X-ray diffraction analyses. The oxidation process is shown to be accompanied by the formation of the CaSO4 and ZnO phases depending on the heating conditions, as well as by the formation of CaO with SO2 evolution. The two-stage oxidation of CaZnSO is interpreted by the Avrami-Erofeev kinetic equations with activation energies of 190 and 422 kJ/mol.

  11. Dimensional Tailoring of Hydrothermally Grown Zinc Oxide Nanowire Arrays.

    PubMed

    Cheng, Jayce J; Nicaise, Samuel M; Berggren, Karl K; Gradečak, Silvija

    2016-01-13

    Hydrothermally synthesized ZnO nanowire arrays are critical components in a range of nanostructured semiconductor devices. The device performance is governed by relevant nanowire morphological parameters that cannot be fully controlled during bulk hydrothermal synthesis due to its transient nature. Here, we maintain homeostatic zinc concentration, pH, and temperature by employing continuous flow synthesis and demonstrate independent tailoring of nanowire array dimensions including areal density, length, and diameter on device-relevant length scales. By applying diffusion/reaction-limited analysis, we separate the effect of local diffusive transport from the c-plane surface reaction rate and identify direct incorporation as the c-plane growth mechanism. Our analysis defines guidelines for precise and independent control of the nanowire length and diameter by operating in rate-limiting regimes. We validate its utility by using surface adsorbents that limit reaction rate to obtain spatially uniform vertical growth rates across a patterned substrate.

  12. The effects of gold coated and uncoated zinc oxide nanohexagons on the photophysicochemical properties of the low symmetry zinc phthalocyanine

    NASA Astrophysics Data System (ADS)

    D'Souza, Sarah; Ogbodu, Racheal; Nyokong, Tebello

    2015-11-01

    A new low symmetry, Zn phthalocyanine monosubstituted with diethylaminoethanethiol (mDEAET ZnPc) was synthesized and characterized. This work reports on its photophysical and photochemical properties of mDEAET ZnPc alone and when conjugated to gold coated and uncoated zinc oxide nanohexagons (ZnO NHXs). The photophysicochemical properties generally improved in the presence of the ZnO NHXs. These complexes were also tested for their photodynamic antimicrobial activity against Staphylococcus aureus (S. aureus). The Pc alone showed remarkable growth inhibition even at concentrations as low as 0.05 mg/mL. The conjugates showed a high photoinactivation of S. aureus after 30 min at a fluence of 90 mW cm-2 at a concentration of 0.05 mg/mL. The ZnPc-ZnO NHX conjugates produced the best antimicrobial results.

  13. Effect of Zinc Oxide Film Deposition Position on the Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Low-Temperature Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Takechi, Kazushige; Nakata, Mitsuru; Eguchi, Toshimasa; Otsuki, Shigeyoshi; Yamaguchi, Hirotaka; Kaneko, Setsuo

    2008-09-01

    We report on the effect of zinc oxide (ZnO) film deposition position on the characteristics of ZnO thin-film transistors (TFTs) fabricated by magnetron sputtering with no intentional heating of the substrate. We evaluate the properties of ZnO (channel semiconductor) films deposited at various positions with respect to the target position. We show that the film deposition at a position off-centered from the target results in good TFT characteristics. This might be due to the fact that the off-centered deposition position is effective for suppressing the effect of energetic negative ions in the plasma.

  14. In vitro effect of zinc on oxidative changes in human semen.

    PubMed

    Gavella, M; Lipovac, V

    1998-11-01

    The in vitro effect of zinc on superoxide anion (O2-) generation and on experimentally induced lipid peroxidation (LPO) in spermatozoa of infertile men was investigated. Washed spermatozoa pre-incubated for 30 min at 37 degrees C in the presence of 1 or 3 mmol l-1 zinc, released less superoxide anions (P < 0.03 and P < 0.02, respectively; n = 9) than the untreated spermatozoa. Similar results were obtained using activated polymorphonuclear leukocytes (1 x 10(6) cells ml-1) in the presence of 1 or 3 mmol l-1 Zn (P < 0.001 and P < 0.0002, respectively; n = 9). The in vitro evidence of the inhibitory effect of zinc on O2- generation by human spermatozoa and leukocytes indicates that zinc may act in vivo as a scavenger of excessive O2- production by defective spermatozoa and/or leukocytes in semen after ejaculation. A significant stimulatory effect of Zn (3 mmol l-1) on iron-induced lipid peroxidation, measured by the formation of thiobarbituric acid reactive substances (TBARS), was detected in the spermatozoa of 16 normo- and 17 asthenozoospermic males (P < 0.0001 and P < 0.001, respectively). In 11 samples with sperm concentration 20.3 +/- 2.1 x 10(6) ml-1, exhibiting initial TBARS concentration two times higher than in normo- and asthenozoospermic samples (40.5 +/- 2.4 vs. 17.1 +/- 1.1 and 28.5 +/- 4.1 nmoles TBARS 10(-8) spermatozoa), no effect of zinc on the LPO rate was found. The observed inhibitory effect of zinc on superoxide anion regardless of the initial O2- level and stimulatory effect of zinc depending on the initial LPO rate in human spermatozoa suggests that this metal ion participates in the oxidative changes occurring after ejaculation and thus may modulate the properties of germ cells.

  15. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    SciTech Connect

    Lo, Fang-Yuh Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Liu, Hsiang-Lin; Chern, Ming-Yau

    2015-06-07

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  16. Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Lo, Fang-Yuh; Ting, Yi-Chieh; Chou, Kai-Chieh; Hsieh, Tsung-Chun; Ye, Cin-Wei; Hsu, Yung-Yuan; Chern, Ming-Yau; Liu, Hsiang-Lin

    2015-06-01

    Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

  17. The role of pH variation on the growth of zinc oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Wahab, Rizwan; Ansari, S. G.; Kim, Young Soon; Song, Minwu; Shin, Hyung-Shik

    2009-02-01

    In this paper we present a systematic study on the morphological variation of ZnO nanostructure by varying the pH of precursor solution via solution method. Zinc acetate dihydrate and sodium hydroxide were used as a precursor, which was refluxed at 90 °C for an hour. The pH of the precursor solution (zinc acetate di hydrate) was increased from 6 to 12 by the controlled addition of sodium hydroxide (NaOH). Morphology of ZnO nanorods markedly varies from sheet-like (at pH 6) to rod-like structure of zinc oxide (pH 10-12). Diffraction patterns match well with standard ZnO at all pH values. Crystallinity and nanostructures were confirmed by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) pattern, which indicates structure grew along [0 0 0 1] direction with an ideal lattice fringes distance 0.52 nm. FTIR spectroscopic measurement showed a standard peak of zinc oxide at 464 cm -1. Amount of H + and OH - ions are found key to the structure control of studied material, as discussed in the growth mechanism.

  18. Cytotoxicity of cultured macrophages exposed to antimicrobial zinc oxide (ZnO) coatings on nanoporous aluminum oxide membranes.

    PubMed

    Petrochenko, Peter E; Skoog, Shelby A; Zhang, Qin; Comstock, David J; Elam, Jeffrey W; Goering, Peter L; Narayan, Roger J

    2013-01-01

    Zinc oxide (ZnO) is a widely used commercial material that is finding use in wound healing applications due to its antimicrobial properties. Our study demonstrates a novel approach for coating ZnO with precise thickness control onto 20 nm and 100 nm pore diameter anodized aluminum oxide using atomic layer deposition (ALD). ZnO was deposited throughout the nanoporous structure of the anodized aluminum oxide membranes. An 8 nm-thick coating of ZnO, previously noted to have antimicrobial properties, was cytotoxic to cultured macrophages. After 48 h, ZnO-coated 20 nm and 100 nm pore anodized aluminum oxide significantly decreased cell viability by ≈65% and 54%, respectively, compared with cells grown on uncoated anodized aluminum oxide membranes and cells grown on tissue culture plates. Pore diameter (20-200 nm) did not influence cell viability.

  19. The histopathology of rat lung following exposure to zinc oxide/hexachloroethane smoke or installation with zinc chloride followed by treatment with 70% oxygen

    SciTech Connect

    Brown, R.F.; Marrs, T.C.; Rice, P.; Masek, L.C. )

    1990-04-01

    The effects of inhaled zinc oxide/hexachloroethane smoke (11,580 mg x min/m3) and intratracheally instilled zinc chloride (2.5 mg/kg body weight) have been studied in rat lung. The effects of subsequent treatment with 70% oxygen have been studied after both procedures. Both the inhalation of the smoke and instillation of zinc chloride produced similar effects that included pulmonary edema, alveolitis and, at a later stage, some fibrosis. After zinc chloride instillation, the pathological changes largely spared the periphery of the lung, while following smoke inhalation they were more diffuse. Subsequent oxygen administration had little effect on the development or progression of the pathological changes.

  20. Bias tuning charge-releasing leading to negative differential resistance in amorphous gallium oxide/Nb:SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Wang, P. C.; Li, P. G.; Zhi, Y. S.; Guo, D. Y.; Pan, A. Q.; Zhan, J. M.; Liu, H.; Shen, J. Q.; Tang, W. H.

    2015-12-01

    Negative differential resistance (NDR) and bipolar resistive switching (RS) phenomena were observed in Au/Ga2O3-x/Nb:SrTiO3/Au heterostructures fabricated by growing amorphous gallium oxide thin films on 0.7%Nb-doped SrTiO3 substrates using pulsed laser deposition technique. The RS behavior is reproducible and stable without the forming process. The NDR phenomenon happened during the course of RS from low resistance state to high resistance state and was dependent much on the applied forward bias. The bias dependent charge releasing from oxygen vacancies was considered to contribute to the NDR behavior. The results show that there is a very close relationship between NDR and RS.

  1. Electrochemistry of the Zinc-Silver Oxide System. Part 2: Practical Measurements of Energy Conversion Using Commercial Miniature Cells.

    ERIC Educational Resources Information Center

    Smith, Michael J.; Vincent, Colin A.

    1989-01-01

    Summarizes the quantitative relationships pertaining to the operation of electrochemical cells. Energy conversion efficiency, cycle efficiency, battery power, and energy/power density of two types of zinc-silver oxide cells are discussed. (YP)

  2. Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Parthiban, S.; Park, K.; Kim, H.-J.; Yang, S.; Kwon, J.-Y.

    2014-11-01

    We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ˜4.3 × 107.

  3. The electronic structure of co-sputtered zinc indium tin oxide thin films

    SciTech Connect

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan; Gutmann, Sebastian; Schlaf, Rudy

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  4. Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C

    NASA Astrophysics Data System (ADS)

    Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol

    2010-09-01

    Amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 °C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm2/V s and an on/off ratio of 107. The stabilities of a-SIZO TFT and indium-zinc-oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (Vth) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm2/V s.

  5. Synthesis and dielectric properties of zinc oxide nanoparticles using a biotemplate

    SciTech Connect

    P, Sharmila P; Tharayil, Nisha J.

    2014-10-15

    Zinc Oxide nanoparticles are synthesized using DNA as capping agent. Zinc oxide nanoparticles are synthesized using DNA as a capping agent. Structural and morphological characterizations are done using SEM, FTIR and XRD. The particle size and lattice parameters are calculated from the diffraction data. The optical properties are studied using UV-Vis absorption spectroscopy and bandgap variation with temperature is determined. The dielectric property of nanoparticles is studied by varying temperature and frequency. The dielectric constant and dispersion parameters are found out. Method of Cole-Cole analysis is used to study the high temperature dispersion of relaxation time. The variation of both AC and DC conductivity are studied and activation energy calculated.

  6. Removal of Fluorides and Chlorides from Zinc Oxide Fumes by Microwave Sulfating Roasting

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Zhang, Libo; Chen, Guo; Peng, Jinhui; Zhou, Liexing; Yin, Shaohua; Liu, Chenhui

    2015-10-01

    Dechlorination and defluorination from zinc oxide dust by microwave sulfating roasting was investigated in this study. According to proposed reactions in the process, detailed experiments were systematically conducted to study the effect of roasting temperature, holding time, air and steam flow rates on the efficiency of the removal of F and Cl. The results show that 92.3% of F and 90.5% of Cl in the fume could be purified when the condition of the roasting temperature of 650 °C, holding time at 60 min, air flow of 300 L/h and steam flow of 8 ml/min was optimized. Our investigation indicates that microwave sulfating roasting could be a promising new way for the dechlorination and defluorination from zinc oxide dust.

  7. High-performance transistors based on zinc tin oxides by single spin-coating process.

    PubMed

    Zhao, Yunlong; Duan, Lian; Dong, Guifang; Zhang, Deqiang; Qiao, Juan; Wang, Liduo; Qiu, Yong

    2013-01-08

    Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.

  8. Atmospheric-pressure glow plasma synthesis of plasmonic and photoluminescent zinc oxide nanocrystals

    NASA Astrophysics Data System (ADS)

    Bilik, N.; Greenberg, B. L.; Yang, J.; Aydil, E. S.; Kortshagen, U. R.

    2016-06-01

    In this paper, we present a large-volume (non-micro) atmospheric pressure glow plasma capable of rapid, large-scale zinc oxide nanocrystal synthesis and deposition (up to 400 μg/min), whereas in the majority of the literature, nanoparticles are synthesized using micro-scale or filamentary plasmas. The reactor is an RF dielectric barrier discharge with a non-uniform gap spacing. This design encourages pre-ionization during the plasma breakdown, making the discharge uniform over a large volume. The produced zinc oxide nanocrystals typically have diameters ranging from 4 to 15 nm and exhibit photoluminescence at ≈550 nm and localized surface plasmon resonance at ≈1900 cm-1 due to oxygen vacancies. The particle size can be tuned to a degree by varying the gas temperature and the precursor mixing ratio.

  9. Thermal stability of polyacetal/ethylene-octene copolymer/zinc oxide nanocomposites

    NASA Astrophysics Data System (ADS)

    Grigalovica, A.; Merijs Meri, R.; Zicans, J.; Ivanova, T.; Grabis, J.

    2013-12-01

    In this work we investigate binary blends of polyoxymethylene and ethylene octene copolymer (EOC) and their composites with nanostructured zinc oxide (ZnO). EOC content in the composites varies from 0 to 50 wt. %. The amount of ZnO filler in the composites is changed in the interval from 0 to 5 wt. %. Thermal properties of composites are investigated with thermogravimetric analysis and differential scanning calorimetry. It is observed that ZnO addition increases thermal stability of the investigated composites.

  10. Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism

    DTIC Science & Technology

    2011-10-01

    characterization, and ab initio simulations of star-shaped hexagonal zinc oxide ( ZnO ) nanowires . The ZnO nanostructures were synthesized by a low...temperature hydrothermal growth method. The cross-section of the ZnO nanowires transformed from a hexagon to a hexagram when sulfur dopants from thiourea...emission of multiple longitudinal-optical (LO) phonons [1, 2, 4, 5]. Variously shaped ZnO nanowires and nanoparticles are routinely synthesized, and their

  11. Biomimetic zinc oxide replica with structural color using butterfly (Ideopsis similis) wings as templates.

    PubMed

    Zhang, Wang; Zhang, Di; Fan, Tongxiang; Ding, Jian; Gu, Jiajun; Guo, Qixin; Ogawa, Hiroshi

    2006-09-01

    Nano-structured colorful zinc oxide (ZnO) replicas were produced using the wings of the Ideopsis similis butterfly as templates. The ZnO replicas we obtained exhibit iridescence, which was clearly observed under an optical microscope (OM). Field emission scanning electron microscope analysis shows that all the microstructure details are maintained faithfully in the ZnO replica. A computer model was established to simulate the diffraction spectral results, which agreed well with the OM images.

  12. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  13. Effects of morphology on photocatalytic performance of Zinc oxide nanostructures synthesized by rapid microwave irradiation methods

    NASA Astrophysics Data System (ADS)

    Kajbafvala, Amir; Ghorbani, Hamed; Paravar, Asieh; Samberg, Joshua P.; Kajbafvala, Ehsan; Sadrnezhaad, S. K.

    2012-04-01

    In this study, two different chemical solution methods were used to synthesize Zinc oxide nanostructures via a simple and fast microwave assisted method. Afterwards, the photocatalytic performances of the produced ZnO powders were investigated using methylene blue (MB) photodegradation with UV lamp irradiation. The obtained ZnO nanostructures showed spherical and flower-like morphologies. The average crystallite size of the flower-like and spherical nanostructures were determined to be about 55 nm and 28 nm, respectively. X-ray diffraction (XRD), scanning electronic microscopy (SEM), Brunauer-Emmett-Teller (BET), room temperature photoluminescence (RT-PL) and UV-vis analysis were used for characterization of the synthesized ZnO powders. Using BET N2-adsorption technique, the specific surface area of the flower-like and spherical ZnO nanostructures were found to be 22.9 m2/gr and 98 m2/gr, respectively. Both morphologies show similar band gap values. Finally, our results depict that the efficiency of photocatalytic performance in the Zinc oxide nanostructures with spherical morphology is greater than that found in the flower-like Zinc oxide nanostructures as well as bulk ZnO.

  14. PEGylated silver doped zinc oxide nanoparticles as novel photosensitizers for photodynamic therapy against Leishmania.

    PubMed

    Nadhman, Akhtar; Nazir, Samina; Khan, Malik Ihsanullah; Arooj, Syeda; Bakhtiar, Muhammad; Shahnaz, Gul; Yasinzai, Masoom

    2014-12-01

    We describe daylight responsive silver (Ag) doped semiconductor nanoparticles of zinc oxide (DSNs) for photodynamic therapy (PDT) against Leishmania. The developed materials were characterized by X-ray diffraction analysis (XRD), Rutherford backscattering (RBS), diffused reflectance spectroscopy (DRS), and band-gap analysis. The Ag doped semiconductor nanoparticles of zinc oxide were PEGylated to enhance their biocompatibility. The DSNs demonstrated effective daylight response in the PDT of Leishmania protozoans, through the generation of reactive oxygen species (ROS) with a quantum yield of 0.13 by nondoped zinc oxide nanoparticles (NDSN) whereas 0.28 by DSNs. None of the nanoparticles have shown any antileishmanial activity in dark, confirming that only ROS produced in the daylight were involved in the killing of leishmanial cells. Furthermore, the synthesized nanoparticles were found biocompatible. Using reactive oxygen species scavengers, cell death was attributable mainly to 77-83% singlet oxygen and 18-27% hydroxyl radical. The nanoparticles caused permeability of the cell membrane, leading to the death of parasites. Further, the uptake of nanoparticles by Leishmania cells was confirmed by inductively coupled plasma atomic emission spectroscopy (ICP-AES). We believe that these DSNs are widely applicable for the PDT of leishmaniasis, cancers, and other infections due to daylight response.

  15. Novel biocompatible composite (Chitosan-zinc oxide nanoparticle): preparation, characterization and dye adsorption properties.

    PubMed

    Salehi, Raziyeh; Arami, Mokhtar; Mahmoodi, Niyaz Mohammad; Bahrami, Hajir; Khorramfar, Shooka

    2010-10-01

    In this paper, the preparation, characterization and dye adsorption properties of novel biocompatible composite (Chitosan-zinc oxide nanoparticle) (CS/n-ZnO) were investigated. Zinc oxide nanoparticles were immobilized onto Chitosan. Physical characteristics of CS/n-ZnO were studied using Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and wavelength dispersive X-ray spectroscopy (WDX). Two textile dyes, Direct Blue 78 (DB78) and Acid Black 26 (AB26), were used as model compounds. The effect of CS/n-ZnO doses, initial dye concentration, salt and pH were elucidated at 20+/-1 degrees C. The isotherm and kinetics of dye adsorption were studied. The presence of functional groups such as hydroxyl, amino and carbonyl groups were detected. Results showed zinc oxide nanoparticles were immobilized onto Chitosan. The data were evaluated for compliance with the Langmuir, Freundlich and Tempkin isotherm models. It was found that AB26 and DB78 followed with Langmuir and Tempkin isotherms, respectively. In addition, adsorption kinetics of both dyes was found to conform to pseudo-second order kinetics. Based on the data of present investigation, one could conclude that the CS/n-ZnO being a biocompatible, eco-friendly and low-cost adsorbent might be a suitable alternative for elimination of dyes from colored aqueous solutions.

  16. The complex interface chemistry of thin-film silicon/zinc oxide solar cell structures.

    PubMed

    Gerlach, D; Wimmer, M; Wilks, R G; Félix, R; Kronast, F; Ruske, F; Bär, M

    2014-12-21

    The interface between solid-phase crystallized phosphorous-doped polycrystalline silicon (poly-Si(n(+))) and aluminum-doped zinc oxide (ZnO:Al) was investigated using spatially resolved photoelectron emission microscopy. We find the accumulation of aluminum in the proximity of the interface. Based on a detailed photoemission line analysis, we also suggest the formation of an interface species. Silicon suboxide and/or dehydrated hemimorphite have been identified as likely candidates. For each scenario a detailed chemical reaction pathway is suggested. The chemical instability of the poly-Si(n(+))/ZnO:Al interface is explained by the fact that SiO2 is more stable than ZnO and/or that H2 is released from the initially deposited a-Si:H during the crystallization process. As a result, Zn (a deep acceptor in silicon) is "liberated" close to the silicon/zinc oxide interface presenting the inherent risk of forming deep defects in the silicon absorber. These could act as recombination centers and thus limit the performance of silicon/zinc oxide based solar cells. Based on this insight some recommendations with respect to solar cell design, material selection, and process parameters are given for further knowledge-based thin-film silicon device optimization.

  17. Influence of particle size of nano zinc oxide on the controlled delivery of Amoxicillin

    NASA Astrophysics Data System (ADS)

    Palanikumar, L.; Ramasamy, S.; Hariharan, G.; Balachandran, C.

    2013-10-01

    A great effort has been exerted to develop drug carriers aiming at satisfying the requirements, such as safety, greater efficiency, predictable therapeutic response, and prolonged release period. The present study aims at developing the use of zinc oxide nanoparticles as a carrier as a function of particle size for amoxicillin drug delivery system. The amoxicillin-loaded zinc oxide nanoparticles have a good antibacterial activity against infectious Gram-positive and Gram-negative bacteria. Zinc oxide nanoparticles have been prepared by wet chemical precipitation method varying the pH values. Particle size and morphology of the as-prepared ZnO powders are characterized by X-ray diffraction, Fourier transform infrared spectroscopy and transmission electron microscope. Drug loading, in vitro drug release and antibacterial activity have been analyzed. Maximum zone of inhibition is observed for Staphylococcus epidermis. The results show that inhibitory efficacy of drug-loaded ZnO nanoparticles is very much dependent on its chosen concentration, drug loading, and size.

  18. Hybrid structure of biotemplate-zinc-tin oxide for better optical, morphological and photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Karpuraranjith, M.; Thambidurai, S.

    2017-03-01

    A new chitosan (as biotemplate)-zinc-tin oxide hybrid structure was successfully synthesized by a chemical precipitation method and annealed at 500 °C. We studied the structural changes, optical, thermal and photo catalytic properties. The chemical bonding of the Zn-O and Sn-O-Sn functional groups were confirmed by FT-IR absorption peaks appearing at 538 and 635 cm‑1. The different ratio of ZnO to SnO2 particles on the biotemplate matrix altered the morphology of the hybrids from an agglomerated state to a microcrystalline form confirmed by HR-SEM and TEM analysis. The formation of a Zn0.15Sn0.85O hybrid structure was observed in the visible light region, with an energy band gap of ∼3.19 eV and higher surface area of 98 m2 g‑1. The thermal property shows that CS-Zn0.15Sn0.85O has a higher thermal stability than a CS-Zn0.25Sn0.75O hybrid structure. The results demonstrate that the biotemplate-zinc-tin oxide hybrid structure has a reinforced effect compared to the other components. Therefore, a biotemplate-based zinc-tin oxide hybrid structure could be a promising material for better dye removal efficiency, which was obtained for ∼100 and 96% with MB and RY-15 dyes.

  19. I. Synthesis of group 13 fluoroalkoxide complexes and the chemical vapor deposition of indium oxide films. II. Synthesis of gallium hydrido-thiolate complexes

    NASA Astrophysics Data System (ADS)

    Miinea, Liliana Angela

    A synthetic route to indium fluoroalkoxide complexes was developed and fluorine-doped indium oxide films were prepared from one of the new complexes by chemical vapor deposition. The reaction of indium amide complexes with fluorinated alcohols was found to be a convenient synthetic route to indium fluoroalkoxide complexes. In[N-t-Bu(SiMe3)]3 reacted with (CF3)Me2COH to give the dimer [In{mu-OCMe 2(CF3)}{OCMe2(CF3)}2] 2. In contrast, reactions involving the more acidic alcohols (CF 3)2MeCOH and (CF3)2CHOH yielded products containing t-BuNH2, which was derived from the amide ligands of the starting material. Reactions of (CF3) 2MeCOH and (CF3)2CHOH with In(tmp)3 (tmp = the anion derived from 2,2,6,6-tetramethylpiperidine) and In(NEt 2)3 gave In[OCH(CF3)2]3(Htmp), [H2tmp][In{OCR(CF3)2}4] (R = H or Me), and mer-In[OCMe(CF3)2]3(py) 3. Polycrystalline indium oxide films were deposited at 400-550°C in a low-pressure chemical vapor deposition process from In[OCMe(CF3 )2]3(H2N-t-Bu) and O2 precursors. The films deposited at ≤500°C contained 2-3 atom % fluorine while the film deposited at 550°C had no detectable fluorine incorporation. Films deposited on quartz (˜3600-A thickness) showed >85% transmittance in the 400-800 nm region, and resistivities of 2.56 x 10 -1-2.02 x 10-2 O cm were measured for the as-deposited films. The observed transmittance is in the range reported previously for doped and undoped In2O3, while the resistivity values are higher than those reported for tin, fluorine or sulfur-doped indium oxide. The work on the synthesis of indium fluoroalkoxide complexes prompted an examination of the synthesis of related aluminum and gallium fluoroalkoxide complexes. Aluminum and gallium fluoroalkoxide complexes of formula M(ORf) 3(HNMe2) [M = Al, Rf = CH(CF3)2, CMe 2(CF3) or CMe(CF3)2; M = Ga, Rf = CMe 2(CF3) or CMe(CF3)2] were prepared by reacting the corresponding metal dimethylamide complexes with fluorinated alcohols. An attempt was made to prepare

  20. Zinc supplementation decreases oxidative stress, incidence of infection, and generation of inflammatory cytokines in sickle cell disease patients.

    PubMed

    Bao, Bin; Prasad, Ananda S; Beck, Frances W J; Snell, Diane; Suneja, Anupam; Sarkar, Fazlul H; Doshi, Nimisha; Fitzgerald, James T; Swerdlow, Paul

    2008-08-01

    Zinc deficiency is common in adult sickle-cell disease (SCD) patients. We previously demonstrated that zinc supplementation to adult SCD patients decreased the incidences of infections and hospital admissions. We hypothesize that zinc supplementation improves T-helper cell function and decreases vascular endothelial cell activation, oxidative stress, and nuclear factor-kappa B (NF-kappaB)-DNA binding in mononuclear cells (MNCs) in SCD patients. To test this hypothesis, 36 SCD patients were recruited and randomly divided into 2 groups. One group (n = 18) received 25-mg zinc orally thrice a day for 3 months. The other group (n = 18) received placebo. The results indicate that the zinc-supplemented group had decreased incidence of infections compared with the placebo group. After zinc supplementation, red blood cell, hemoglobin (Hb), hematocrit, (Hct), plasma zinc, and antioxidant power increased; plasma nitrite and nitrate (NOx), lipid peroxidation products, DNA oxidation products, and soluble vascular cell adhesion molecule-1 decreased in the zinc-supplemented group, compared with the placebo group. Zinc-supplemented patients exhibited significant decreases in lipopolysaccharide-induced tumor necrosis factor-alpha (TNF-alpha) and IL-1beta mRNAs, and TNF-induced nuclear factor of kappaB-DNA binding in MNCs, compared with the placebo group. Ex vivo addition of zinc to MNCs isolated from the placebo subjects decreased TNF-alpha and IL-1beta mRNAs. Zinc supplementation also increased relative levels of IL-2 and IL-2Ralpha mRNAs in phytohemagglutinin-p-stimulated MNCs. These results suggest that zinc supplementation may be beneficial to SCD patients.

  1. Preventive effect of zinc against cadmium-induced oxidative stress in the rat testis.

    PubMed

    Amara, Salem; Abdelmelek, Hafedh; Garrel, Catherine; Guiraud, Pascale; Douki, Thierry; Ravanat, Jean-Luc; Favier, Alain; Sakly, Mohsen; Ben Rhouma, Khémais

    2008-04-01

    The aim of this study was to investigate the antioxidant role of zinc (Zn) in the Cd-exposed testes of Wistar rats. Subchronic exposure to Cd (CdCl(2), 40 mg/l, per os) for 30 days resulted in a significant reduction in growth rate (-11%) and relative weights of testes (-36%) and seminal vesicles (-80%). Treated rats displayed a decrease in testicular and plasma testosterone levels, respectively (-70%, P<0.05; -48%, P<0.05), epididymal sperm count (-22%, P<0.05), and spermatozoa motility (-35%, P<0.05). In contrast, Cd increased the malondialdehyde (+46%, P<0.05), metallothionein (+200%, P<0.05), and 8-oxodGuo concentrations (+71%, P<0.05) in the testis. In the gonad, Cd decreased the GPx (-30%, P<0.05), CAT (-32%, P<0.05), mitochondrial Mn-SOD (-34%, P<0.05), and cytosolic CuZn-SOD (-32%, P<0.05) activities. Zinc supplementation (ZnCl(2), 40 mg/l, per os) in the Cd-exposed rats restored the activities of GPx, CuZn-SOD, and Mn-SOD in the testes to the levels of the control group. Moreover, zinc administration was capable of reducing the elevated levels of malondialdehyde in the testis. Interestingly, zinc supplementation attenuated DNA oxidation induced by Cd in the gonad and restored the testosterone level and sperm count to the levels of the control group. Zinc administration minimized oxidative damage and reversed the impairment of spermatogenesis and testosterone production induced by Cd in the rat testis.

  2. Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

    NASA Astrophysics Data System (ADS)

    Iechi, Hiroyuki; Watanabe, Yasuyuki; Yamauchi, Hiroshi; Kudo, Kazuhiro

    We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

  3. Zinc Oxide Surge Arresters and HVDC 125kV-upgrade 500kV Converter Stations

    NASA Astrophysics Data System (ADS)

    Shirakawa, Shingo; Kobayashi, Takayuki; Matsushita, Yoshinao; Sakai, Takehisa; Suzuki, Hironori; Ozaki, Yuzo

    Gapless Metal (Zinc) Oxide Surge Arresters for a.c. systems contribute to the insulation co-ordination based on the suppression of lightning surges and switching surges. These gapless metal oxide surge arresters using ZnO elements are effective to HVDC systems. This paper describes basic characteristics of ZnO (zinc oxide) elements for d.c. systems and applications of gapless surge arresters to HVDC 125kV frequency converters, HVDC 250kV, upgrade HVDC 500kV converter stations, and HVDC 500kV cables of Japan through the experience of developments and applications of gapless metal oxide surge arresters.

  4. Acceptor conductivity in bulk zinc oxide (0001) crystals

    NASA Astrophysics Data System (ADS)

    Adekore, Bababunmi Tolu

    ZnO is a promising wide bandgap semiconductor. Its renowned and prominent properties as its bandgap of 3.37eV at 4.2K; its very high excitonic binding energy, 60meV; its high melting temperature, 2248K constitute the basis for the recently renewed and sustained scientific interests in the material. In addition to the foregoing, the availability of bulk substrates of industrially relevant sizes provides important opportunities such as homoepitaxial deposition of the material which is a technological asset in the production of efficient optoelectronic and electronic devices. The nemesis of wide bandgap materials cannot be more exemplified than in ZnO. The notorious limitation of asymmetric doping and the haunting plague of electrically active point defects dim the bright future of the material. In this case, the search for reliable and consistent acceptor conductivity in bulk substrates has been hitherto, unsuccessful. In the dissertation that now follows, our efforts have been concerted in the search for a reliable acceptor. We have carefully investigated the science of point defects in the material, especially those responsible for the high donor conductivity. We also investigated and herein report variety of techniques of introducing acceptors into the material. We employ the most relevant and informative characterization techniques in verifying both the intended conductivity and the response of intrinsic crystals to variation in temperature and strain. And finally we explain deviations, where they exist, from ideal acceptor characteristics. Our work on reliable acceptor has been articulated in four papers. The first establishing capacitance based methods of monitoring electrically active donor defects. The second investigates the nature of anion acceptors on the oxygen sublattice. A study similar to the preceding study was conducted for cation acceptors on the zinc sublattice and reported in the third paper. Finally, an analysis of the response of the crystal to

  5. Copper Zinc Cobalt Aluminium Chromium Hydroxycarbonates and Mixed Oxides

    NASA Astrophysics Data System (ADS)

    Morpurgo, Simone; Jacono, Mariano Lo; Porta, Piero

    1996-03-01

    Hydroxycarbonate precursors with different Cu/Zn/Co/Al/Cr atomic ratios were prepared by coprecipitation of the metal nitrates with a stoichiometric amount of NaHCO3under controlled conditions of temperature, stirring, and pH. Cu-Zn-Co-Al-Cr mixed oxides were obtained by decomposition of the precursors at different temperatures (623, 723, and 973 K in air). The characterization has been performed by X-ray powder diffraction (XRPD), diffuse reflectance spectroscopy in the UV-VIS-NIR region (DRS), thermal analysis (TGA/DTA), BET surface area determination, and measurements of magnetic susceptibility. The XRPD patterns show that the precursors are quasi-amorphous layered double hydroxides (LDHs or hydrotalcite-like materials with the general stoichiometric formula:MII6MIII2(OH)16CO3· 4H2O, whereMII= Cu, Zn, Co andMIII= Al, Cr) containing a variable amount of Cu2(OH)2CO3(malachite). The thermal decomposition of the precursors occurred through complete dehydration of the sample (up toT= 573 K) and further release of CO2(up toT= 773 K). The decomposition of Cu2(OH)2CO3occurred in a single step at about 653 K. The mixed oxides obtained by calcination of the precursors at 623 K were poorly crystalline materials. Crystalline oxide mixtures containing CuO, ZnO, and spinels as ZnCr2O4, ZnCo2O4, ZnAl2O4, and Co3O4in a solid solution were formed only at 973 K, after complete release of CO2.

  6. Toxicity to woodlice of zinc and lead oxides added to soil litter

    USGS Publications Warehouse

    Beyer, W.N.; Anderson, A.

    1985-01-01

    Previous studies have shown that high concentrations of metals in soil are associated with reductions in decomposer populations. We have here determined the relation between the concentrations of lead and zinc added as oxides to soil litter and the survival and reproduction of a decomposer population under controlled conditions. Laboratory populations of woodlice (Porcellio scaber Latr) were fed soil litter treated with lead or zinc at concentrations that ranged from 100 to 12,800 ppm. The survival of the adults, the maximum number of young alive, and the average number of young alive, were recorded over 64 weeks. Lead at 12,800 ppm and zinc at 1,600 ppm or more had statistically significant (p < 0.05) negative effects on the populations. These results agree with field observations suggesting that lead and zinc have reduced populations of decomposers in contaminated forest soil litter, and concentrations are similar to those reported to be associated with reductions in natural populations of decomposers. Poisoning of decomposers may disrupt nutrient cycling, reduce the numbers of invertebrates available to other wildlife for food, and contribute to the contamination of food chains.

  7. Effect of refluxing time on the morphology of pencil like zinc oxide nanostructures prepared by solution method

    NASA Astrophysics Data System (ADS)

    Wahab, Rizwan; Kim, Young-Soon; Shin, Hyung-Shik

    2010-10-01

    This paper presents the fabrication of pencil like zinc oxide nanorods by solution method using precursor zinc acetate di-hydrate (Zn(Ac)2.2H2O) and alkali sodium hydroxide (NaOH) at a very low refluxing temperature (75 °C) for different ageing/ refluxing (12 h, 24 h, 36 h, 48 h and 60 h) time intervals. The morphological observation was carried out by using Field Emission Scanning Electron Microscopy (FESEM). The FESEM revealed that as the aging/refluxing time increased, the size (length and diameter) of the zinc oxide nanorods also increased. Furthermore, the morphology and crystallinity of the products grown were also confirmed by Transmission Electron Microscopy (TEM), high-resolution TEM, and Selected Area Electron Diffraction (SAED) patterns, which indicated that grown pencils grew along a [0001] direction with an ideal lattice fringe distance of ˜0.52 nm. The optical properties of the grown pencil-like zinc oxide nanorods were characterized by using UV-vis spectroscopy. Strong absorbance peaks were observed at ˜375 nm to 378 nm, which is the characteristic peak for the wurtzite hexagonal phase of ZnO. The FTIR spectroscopic measurement showed a standard peak of zinc oxide in the range of 428 cm-1 to 520 cm-1. Additionally, on the basis of chemical and morphological analysis, we have also proposed a possible growth mechanism for pencillike zinc oxide nanostructures.

  8. Copper and Zinc Oxide Composite Nanostructures for Solar Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Wu, Fei

    Solar energy is a clean and sustainable energy source to counter global environmental issues of rising atmospheric CO2 levels and depletion of natural resources. To extract useful work from solar energy, silicon-based photovoltaic devices are extensively used. The technological maturity and the high quality of silicon (Si) make it a material of choice. However limitations in Si exist, ranging from its indirect band gap to low light absorption coefficient and energy and capital intensive crystal growth schemes. Therefore, alternate materials that are earth-abundant, benign and simpler to process are needed for developing new platforms for solar energy harvesting applications. In this study, we explore oxides of copper (CuO and Cu2O) in a nanowire morphology as alternate energy harvesting materials. CuO has a bandgap of 1.2 eV whereas Cu2O has a bandgap of 2.1 eV making them ideally suited for absorbing solar radiation. First, we develop a method to synthesize vertical, single crystalline CuO and Cu2O nanowires of ~50 microm length and aspect ratios of ~200. CuO nanowire arrays are synthesized by thermal oxidation of Cu foils. Cu2O nanowire arrays are synthesized by thermal reduction of CuO nanowires. Next, surface engineering of these nanowires is achieved using atomic layer deposition (ALD) of ZnO. By depositing 1.4 nm of ZnO, a highly defective surface is produced on the CuO nanowires. These defects are capable of trapping charge as is evident through persistent photoconductivity measurements of ZnO coated CuO nanowires. The same nanowires serve as efficient photocatalysts reducing CO2 to CO with a yield of 1.98 mmol/g-cat/hr. Finally, to develop a robust platform for flexible solar cells, a protocol to transfer vertical CuO nanowires inside flexible polydimethylsiloxane (PDMS) is demonstrated. Embedded CuO nanowires-ZnO pn junctions show a VOC of 0.4 V and a JSC of 10.4 microA/cm2 under white light illumination of 5.7 mW/cm2. Thus, this research provides broad

  9. Investigations into Recycling Zinc from Used Metal Oxide Varistors via pH Selective Leaching: Characterization, Leaching, and Residue Analysis

    PubMed Central

    Gutknecht, Toni; Gustafsson, Anna; Forsgren, Christer; Ekberg, Christian; Steenari, Britt-Marie

    2015-01-01

    Metal oxide varistors (MOVs) are a type of resistor with significantly nonlinear current-voltage characteristics commonly used in power lines to protect against overvoltages. If a proper recycling plan is developed MOVs can be an excellent source of secondary zinc because they contain over 90 weight percent zinc oxide. The oxides of antimony, bismuth, and to a lesser degree cobalt, manganese, and nickel are also present in varistors. Characterization of the MOV showed that cobalt, nickel, and manganese were not present in the varistor material at concentrations greater than one weight percent. This investigation determined whether a pH selective dissolution (leaching) process can be utilized as a starting point for hydrometallurgical recycling of the zinc in MOVs. This investigation showed it was possible to selectively leach zinc from the MOV without coleaching of bismuth and antimony by selecting a suitable pH, mainly higher than 3 for acids investigated. It was not possible to leach zinc without coleaching of manganese, cobalt, and nickel. It can be concluded from results obtained with the acids used, acetic, hydrochloric, nitric, and sulfuric, that sulfate leaching produced the most desirable results with respect to zinc leaching and it is also used extensively in industrial zinc production. PMID:26421313

  10. Production of zinc and manganese oxide particles by pyrolysis of alkaline and Zn-C battery waste.

    PubMed

    Ebin, Burçak; Petranikova, Martina; Steenari, Britt-Marie; Ekberg, Christian

    2016-05-01

    Production of zinc and manganese oxide particles from alkaline and zinc-carbon battery black mass was studied by a pyrolysis process at 850-950°C with various residence times under 1L/minN2(g) flow rate conditions without using any additive. The particular and chemical properties of the battery waste were characterized to investigate the possible reactions and effects on the properties of the reaction products. The thermodynamics of the pyrolysis process were studied using the HSC Chemistry 5.11 software. The carbothermic reduction reaction of battery black mass takes place and makes it possible to produce fine zinc particles by a rapid condensation, after the evaporation of zinc from a pyrolysis batch. The amount of zinc that can be separated from the black mass is increased by both pyrolysis temperature and residence time. Zinc recovery of 97% was achieved at 950°C and 1h residence time using the proposed alkaline battery recycling process. The pyrolysis residue is mainly MnO powder with a low amount of zinc, iron and potassium impurities and has an average particle size of 2.9μm. The obtained zinc particles have an average particle size of about 860nm and consist of hexagonal crystals around 110nm in size. The morphology of the zinc particles changes from a hexagonal shape to s spherical morphology by elevating the pyrolysis temperature.

  11. Proteus mirabilis alleviates zinc toxicity by preventing oxidative stress in maize (Zea mays) plants.

    PubMed

    Islam, Faisal; Yasmeen, Tahira; Riaz, Muhammad; Arif, Muhammad Saleem; Ali, Shafaqat; Raza, Syed Hammad

    2014-12-01

    Plant-associated bacteria can have beneficial effects on the growth and health of their host. However, the role of plant growth promoting bacteria (PGPR), under metal stress, has not been widely investigated. The present study investigated the possible mandatory role of plant growth promoting rhizobacteria in protecting plants from zinc (Zn) toxicity. The exposure of maize plants to 50µM zinc inhibited biomass production, decreased chlorophyll, total soluble protein and strongly increased accumulation of Zn in both root and shoot. Similarly, Zn enhanced hydrogen peroxide, electrolyte leakage and lipid peroxidation as indicated by malondaldehyde accumulation. Pre-soaking with novel Zn tolerant bacterial strain Proteus mirabilis (ZK1) isolated zinc (Zn) contaminated soil, alleviated the negative effect of Zn on growth and led to a decrease in oxidative injuries caused by Zn. Furthermore, strain ZK1 significantly enhanced the activities of catalase, guaiacol peroxidase, superoxide dismutase and ascorbic acid but lowered the Proline accumulation in Zn stressed plants. The results suggested that the inoculation of Zea mays plants with P. mirabilis during an earlier growth period could be related to its plant growth promoting activities and avoidance of cumulative damage upon exposure to Zn, thus reducing the negative consequences of oxidative stress caused by heavy metal toxicity.

  12. Pencil-like zinc oxide micro/nano-scale structures: Hydrothermal synthesis, optical and photocatalytic properties

    SciTech Connect

    Moulahi, A.; Sediri, F.

    2013-10-15

    Graphical abstract: - Highlights: • Zinc oxide micro/nanopencils have been synthesized hydrothermally. • Photocatalytic activity has been evaluated by the degradation of methylene blue under UV light irradiation. • ZnO nanopencils exhibit much higher photocatalytic activity than the commercial ZnO. - Abstract: Zinc oxide micro/nanopencils have been successfully synthesized by hydrothermal process using zinc acetate and diamines as structure-directing agents. The morphology, the structure, the crystallinity and the composition of the materials were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The optical properties of synthesized ZnO were investigated by UV–vis spectroscopy. The photocatalytic activity of the material has been evaluated by the degradation of methylene blue under UV irradiation. As a result, after the lapse of 150 min, around 82% bleaching was observed, with ZnO nanopencils yielding more photodegradation compared to that of commercial ZnO (61%)

  13. Reduced Staphylococcus aureus proliferation and biofilm formation on zinc oxide nanoparticle PVC composite surfaces.

    PubMed

    Seil, Justin T; Webster, Thomas J

    2011-06-01

    Conventional particulate zinc oxide (ZnO) is a known antibacterial agent. Studies have shown that reducing the size of ZnO particles to nanoscale dimensions further enhances their antibacterial properties. Polymers, like all biomaterials, run the risk of harboring bacteria which may produce an antibiotic-resistant biofilm. The addition of ZnO nanoparticles to form a polymer composite material may thus reduce undesirable bacteria activity. The purpose of the present in vitro study was to investigate the antibacterial properties of ZnO nanoparticles when incorporated into a traditional polymeric biomaterial. For this purpose, Staphylococcus aureus were seeded at a known cell density onto coverslips coated with a film of polyvinyl chloride (PVC) with varying concentrations of ZnO nanoparticles. Samples were cultured for 24 or 72 h. Methods of analysis, including optical density readings and crystal violet staining, indicated a reduced presence of a biofilm on ZnO nanoparticle polymer composites compared to pure polymer controls. Live/dead bacteria assays provided images to confirm the reduced presence of active bacteria on samples with zinc oxide nanoparticles. Conditioning of the cell culture medium by the composites was also investigated by measuring concentrations of elemental zinc (Zn(2+)) and bacteria growth in the presence of conditioned medium. This study demonstrated that the development of ZnO polymer composites may improve biomaterial effectiveness for numerous applications, such as endotracheal tubes, catheter and implanted biomaterials, which are prone to bacterial infection.

  14. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    SciTech Connect

    Tari, Alireza Lee, Czang-Ho; Wong, William S.

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  15. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    PubMed Central

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-01-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for ‘stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces. PMID:27248982

  16. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    NASA Astrophysics Data System (ADS)

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-06-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for `stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces.

  17. Functional zinc oxide nanostructures for electronic and energy applications

    NASA Astrophysics Data System (ADS)

    Prasad, Abhishek

    vacuum levels. We found that there exists a minimum Eth as we scale the threshold field with pressure. This behavior is explained by referring to Paschen's law.(4) We have studied the application of ZnO nanostructures for solar energy harvesting. First, as-grown and (CdSe) ZnS QDs decorated ZnO NBs and ZnONWs were tested for photocurrent generation. All these nanostructures offered fast response time to solar radiation. The decoration of QDs decreases the stable current level produced by ZnONWs but increases that generated by NBs. It is possible that NBs offer more stable surfaces for the attachment of QDs. In addition, our results suggests that performance degradation of solar cells made by growing ZnO NWs on ITO is due to the increase in resistance of ITO after the high temperature growth process. Hydrogen annealing also improve the efficiency of the solar cells by decreasing the resistance of ITO. Due to the issues on ITO, we use Ni foil as the growth substrates. Performance of solar cells made by growing ZnO NWs on Ni foils degraded after Hydrogen annealing at both low (300°C) and high (600°C) temperatures since annealing passivates native defects in ZnONWs and thus reduce the absorption of visible spectra from our solar simulator. Decoration of QDs improves the efficiency of such solar cells by increasing absorption of light in the visible region. Using a better electrolyte than phosphate buffer solution (PBS) such as KI also improves the solar cell efficiency. (5) Finally, we have attempted p-type doping of ZnO NWs using various growth precursors including phosphorus pentoxide, sodium fluoride, and zinc fluoride. We have also attempted to create p-type carriers via introducing interstitial fluorine by annealing ZnO nanostructures in diluted fluorine gas. In brief, we are unable to reproduce the growth of reported p-type ZnO nanostructures. However; we have identified the window of temperature and duration of post-growth annealing of ZnO NWs in dilute fluorine gas

  18. Enhanced antibacterial activity of zinc oxide nanoparticles synthesized using Petroselinum crispum extracts

    NASA Astrophysics Data System (ADS)

    Stan, Manuela; Popa, Adriana; Toloman, Dana; Silipas, Teofil-Danut; Vodnar, Dan Cristian; Katona, Gabriel

    2015-12-01

    The present contribution reports the synthesis of zinc oxide nanoparticles (ZnO NPs) using aqueous leaf and root extracts of Petroselinum crispum (parsley) and characterization of as-prepared samples. ZnO NPs are subjected to X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR) studies. The XRD studies reveal a hexagonal wurtzite structure without supplementary diffraction lines for all ZnO samples. TEM analysis shows that the particle size is influenced by the type of plant extract. The EPR spectra indicate the presence of Mn2+ ions in ZnO sample synthesized using P. crispum leaf extract, while zinc vacancy complexes and oxygen vacancies are evidenced in all analyzed samples. ZnO NPs synthesized using P. crispum extracts exhibit increased (2-16 times) antibacterial activity as compared to chemically synthesized ZnO NPs.

  19. Enhanced antibacterial activity of zinc oxide nanoparticles synthesized using Petroselinum crispum extracts

    SciTech Connect

    Stan, Manuela Popa, Adriana; Toloman, Dana; Silipas, Teofil-Danut; Vodnar, Dan Cristian; Katona, Gabriel

    2015-12-23

    The present contribution reports the synthesis of zinc oxide nanoparticles (ZnO NPs) using aqueous leaf and root extracts of Petroselinum crispum (parsley) and characterization of as-prepared samples. ZnO NPs are subjected to X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron paramagnetic resonance (EPR) studies. The XRD studies reveal a hexagonal wurtzite structure without supplementary diffraction lines for all ZnO samples. TEM analysis shows that the particle size is influenced by the type of plant extract. The EPR spectra indicate the presence of Mn{sup 2+} ions in ZnO sample synthesized using P. crispum leaf extract, while zinc vacancy complexes and oxygen vacancies are evidenced in all analyzed samples. ZnO NPs synthesized using P. crispum extracts exhibit increased (2-16 times) antibacterial activity as compared to chemically synthesized ZnO NPs.

  20. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

    PubMed

    Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

    2011-03-01

    Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

  1. Preparation, characterization and properties of novel covalently surface-functionalized zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Sato, Moriyuki; Harada, Hajime; Morito, Shigekazu; Fujita, Yasuhisa; Shimosaki, Shunsuke; Urano, Takeshi; Nakamura, Morihiko

    2010-05-01

    Novel covalently surface-modified zinc oxide (ZnO) nanoparticles (NP) (ZHIE) were successfully prepared, which have organic chains composed of hydrophilic amide and urethane linkages, and terminal amino groups on the surfaces, using zinc acetate monohydrate. FTIR spectroscopy, X-ray analysis and TEM observation suggested that the resultant ZHIE NPs have the mean sizes of about 10 nm in diameters, the organic chains linking the amino groups in the terminals and wurtzite crystal structure. UV-vis absorption spectrum of the ZHIE NPs in methanol showed maximum absorption band at 348 nm, supporting the TEM observations. Photoluminescent spectrum measurements depicted that the ZHIE NPs show broad visible emission band on the basis of trapped-electron emission. Cytotoxicity and phagocytosis assays suggested that the ZHIE NPs are noncytotoxic, and the ZHIE-labeled zymosan particles derived by conjugation of the ZHIE NPs with zymosan are internalized into the cells and generate fluorescence based on the ZHIE NPs.

  2. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    DOEpatents

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  3. Effect of Supersaturation on the Growth of Zinc Oxide Nanostructured Films by Electrochemical Deposition

    SciTech Connect

    Illy, B.; Ingham, B; Ryan, M

    2010-01-01

    The changes in crystal growth habit of electrodeposited zinc oxide with zinc nitrate concentration are explained by changes in the levels of saturation at the electrode. Three growth regimes are found between 0.5 and 50 mM. For concentrations less than 2 mM, the growth is one-dimensional. Nanorods grow by screw dislocations from the outside inward, no coalescence is observed, and their surface shows pyramid-like features. For concentrations above 20 mM, the growth is two-dimensional. Large levels of supersaturation favor the nucleation on the low indexes faces and large sheets are observed. In the intermediate regime of growth, the growth is pseudo three-dimensional. Nanorods with a conical ends grow initially before coalescing and forming dense films.

  4. The piezoelectric effect on zinc oxide nano on polyimide substrate by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Idris, A. A. M.; Arsat, R.; Ahmad, M. K.

    2017-03-01

    This paper reports the effect of the deposition conditions crystal quality and film thickness of the Zinc Oxide (ZnO) film on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique. This technique needs Zinc Nitrate Hexahydrate with the mixture of deionized water. At 350 °C, a higher c-axis preferred orientation at peak 0002 crystal orientation, which is critical for piezoelectric applications in ZnO thin films are obtained with the thickness of thin film is 300ηm. It also produces the 204.8 Hz of frequency which is higher than other frequency obtained by lower growth temperature.

  5. Chemical synthesis of zinc oxide nanorods for enhanced hydrogen gas sensing

    NASA Astrophysics Data System (ADS)

    Musarrat, Jabeen; Muhammad Azhar, Iqbal; R Vasant, Kumar; Mansoor, Ahmed; Muhammad Tayyeb, Javed

    2014-01-01

    Zinc oxide (ZnO) nanorods are prepared using equimolar solution of zinc nitrate ((Zn(NO3)2) and hexamethylenetetramine (C6H12N4) by the hydrothermal technique at 80 °C for 12 h. Epitaxial growth is explored by X-ray diffraction (XRD) patterns, revealing that the ZnO nanorods have a hexagonal (wurtzite) structure. Absorption spectra of ZnO are measured by UV—visible spectrometer. The surface morphology is investigated by field emission scanning electron microscopy (FESEM). The synthesized ZnO nanorods are used for detecting the 150 °C hydrogen gas with a concentration over 1000 ppm. The obtained results show a reversible response. The influence of operating temperature on hydrogen gas detecting characteristic of ZnO nanorods is also investigated.

  6. Al-doped zinc oxide nanocomposites with enhanced thermoelectric properties.

    PubMed

    Jood, Priyanka; Mehta, Rutvik J; Zhang, Yanliang; Peleckis, Germanas; Wang, Xiaolin; Siegel, Richard W; Borca-Tasciuc, Theo; Dou, Shi Xue; Ramanath, Ganpati

    2011-10-12

    ZnO is a promising high figure-of-merit (ZT) thermoelectric material for power harvesting from heat due to its high melting point, high electrical conductivity σ, and Seebeck coefficient α, but its practical use is limited by a high lattice thermal conductivity κ(L). Here, we report Al-containing ZnO nanocomposites with up to a factor of 20 lower κ(L) than non-nanostructured ZnO, while retaining bulklike α and σ. We show that enhanced phonon scattering promoted by Al-induced grain refinement and ZnAl(2)O(4) nanoprecipitates presages ultralow κ ∼ 2 Wm( -1) K(-1) at 1000 K. The high α∼ -300 μV K(-1) and high σ ∼ 1-10(4) Ω(-1 )m(-1) result from an offsetting of the nanostructuring-induced mobility decrease by high, and nondegenerate, carrier concentrations obtained via excitation from shallow Al donor states. The resultant ZT ∼ 0.44 at 1000 K is 50% higher than that for the best non-nanostructured counterpart material at the same temperature and holds promise for engineering advanced oxide-based high-ZT thermoelectrics for applications.

  7. In vitro toxicity of zinc oxide nanoparticles: a review

    NASA Astrophysics Data System (ADS)

    Pandurangan, Muthuraman; Kim, Doo Hwan

    2015-03-01

    The toxic effect of ZnO nanoparticles is due to their solubility. ZnO nanoparticles dissolve in the extracellular region, which in turn increases the intracellular [Zn2+] level. The mechanism for increased intracellular [Zn2+] level and ZnO nanoparticles dissolution in the medium is still unclear. Cytotoxicity, increased oxidative stress, increased intracellular [Ca2+] level, decreased mitochondrial membrane potential, and interleukin-8 productions occur in the BEAS-2B bronchial epithelial cells and A549 alveolar adenocarcinoma cells following the exposure of ZnO nanoparticles. Confluent C2C12 cells are more resistant to ZnO nanoparticles compared to the sparse monolayer. Loss of 3T3-L1 cell viability, membrane leakage, and morphological changes occurs due to exposure of ZnO nanoparticles. ZnO nanoparticle induces cytotoxicity and mitochondrial dysfunction in RKO colon carcinoma cells. The occurrence of apoptosis, increased ROS level, reduced mitochondrial activity and formation of tubular intracellular structures are reported following exposure of ZnO nanoparticles in skin cells. Macrophages, monocytes, and dendritic cells are affected by ZnO nanoparticles. In addition, genotoxicity is also induced. The present review summarizes the literature on in vitro toxicity of ZnO nanoparticles (10-100 nm) on various cell lines.

  8. Overexpression of methionine sulfoxide reductases A and B2 protects MOLT-4 cells against zinc-induced oxidative stress.

    PubMed

    Cabreiro, Filipe; Picot, Cĕdric R; Perichon, Martine; Friguet, Bertrand; Petropoulos, Isabelle

    2009-02-01

    Among the amino acids, methionine is the most susceptible to oxidation, and methionine sulfoxide can be catalytically reduced within proteins by methionine sulfoxide reductase A (MsrA) and B (MsrB). As one of the very few repair systems for oxidized proteins, MsrA and MsrB enzymes play a major role in protein homeostasis during aging and have also been involved in cellular defenses against oxidative stress, by scavenging reactive oxygen species. To elucidate the role of zinc on the Msr system, the effects of zinc treatment on control and stably overexpressing MsrA and MsrB2 MOLT-4 leukemia cells have been analyzed. Here we show that zinc treatment has a pro-antioxidant effect in MOLT-4 cells by inducing the transcription of metallothioneins and positively modulating the activity of the Msr enzymes. In contrast, due to its pro-oxidant effect, zinc also led to increased cell death, reactive oxygen species production, and protein damage. Our results indicate that overexpression of the Msr enzymes, due to their antioxidant properties, counteracts the pro-oxidant effects of zinc treatment, which lead to a cellular protection against protein oxidative damage and cell death, by reducing the production of reactive oxygen species.

  9. Microwave accelerated synthesis of zinc oxide nanoplates and their enhanced photocatalytic activity under UV and solar illuminations

    NASA Astrophysics Data System (ADS)

    Anas, S.; Rahul, S.; Babitha, K. B.; Mangalaraja, R. V.; Ananthakumar, S.

    2015-11-01

    Photoactive zinc based nanoplates were developed through a rapid microwave synthesis. A low temperature thermolysis reaction in a surfactant medium was initially performed for producing microwave active zinc based polar precursors. Using these precursors, the zinc oxide nanopowder having platelet morphologies were prepared. The nanoplatelets exhibited random growth with non-polar (1 0 1) surface as the major growth plane. The structural and functional features of the resultant zinc oxide samples were monitored using XRD, FTIR, TEM and PL. The photocatalytic activities of the samples were investigated through the standard photoreduction kinetics using the methylene blue dye. The catalytic efficiencies of the samples were checked both under UV and sunlight. A comparative study was also performed with the standard TiO2 sample. The analyses revealed that the microwave derived zinc oxide have higher catalytic efficiency, than the standard titania samples, both under UV and sunlight illuminations. The unique nature of the zinc oxide non-polar surfaces can be attributed due to the presence of more active two dimensional open surfaces and the higher content of oxygen defect concentrations.

  10. Zinc protects HepG2 cells against the oxidative damage and DNA damage induced by ochratoxin A

    SciTech Connect

    Zheng, Juanjuan; Zhang, Yu; Xu, Wentao; Luo, YunBo; Hao, Junran; Shen, Xiao Li; Yang, Xuan; Li, Xiaohong; Huang, Kunlun

    2013-04-15

    Oxidative stress and DNA damage are the most studied mechanisms by which ochratoxin A (OTA) induces its toxic effects, which include nephrotoxicity, hepatotoxicity, immunotoxicity and genotoxicity. Zinc, which is an essential trace element, is considered a potential antioxidant. The aim of this paper was to investigate whether zinc supplement could inhibit OTA-induced oxidative damage and DNA damage in HepG2 cells and the mechanism of inhibition. The results indicated that that exposure of OTA decreased the intracellular zinc concentration; zinc supplement significantly reduced the OTA-induced production of reactive oxygen species (ROS) and decrease in superoxide dismutase (SOD) activity but did not affect the OTA-induced decrease in the mitochondrial membrane potential (Δψ{sub m}). Meanwhile, the addition of the zinc chelator N,N,N′,N′-tetrakis(2-pyridylmethyl)ethylenediamine (TPEN) strongly aggravated the OTA-induced oxidative damage. This study also demonstrated that zinc helped to maintain the integrity of DNA through the reduction of OTA-induced DNA strand breaks, 8-hydroxy-2′-deoxyguanosine (8-OHdG) formation and DNA hypomethylation. OTA increased the mRNA expression of metallothionein1-A (MT1A), metallothionein2-A (MT2A) and Cu/Zn superoxide dismutase (SOD1). Zinc supplement further enhanced the mRNA expression of MT1A and MT2A, but it had no effect on the mRNA expression of SOD1 and catalase (CAT). Zinc was for the first time proven to reduce the cytotoxicity of OTA through inhibiting the oxidative damage and DNA damage, and regulating the expression of zinc-associated genes. Thus, the addition of zinc can potentially be used to reduce the OTA toxicity of contaminated feeds. - Highlights: ► OTA decreased the intracellular zinc concentration. ► OTA induced the formation of 8-OHdG in HepG2 cells. ► It was testified for the first time that OTA induced DNA hypomethylation. ► Zinc protects against the oxidative damage and DNA damage induced by

  11. Bio-Fabrication of zinc oxide nanoparticles using leaf extract of Parthenium hysterophorus L. and its size-dependent antifungal activity against plant fungal pathogens

    NASA Astrophysics Data System (ADS)

    Rajiv, P.; Rajeshwari, Sivaraj; Venckatesh, Rajendran

    2013-08-01

    The study reports the synthesis and characterization of zinc oxide nanoparticles from weed plant by a novel method. The aim of this work is to synthesize zinc oxide nanoparticles from Parthenium hysterophorus L. by inexpensive, ecofriendly and simple method. Highly stable, spherical and hexagonal zinc oxide nanoparticles were synthesized by using different concentrations of 50% and 25% parthenium leaf extracts. Both the concentrations of the leaf extract act as reducing and capping agent for conversion of nanoparticles. Formation of zinc oxide nanoparticles have been confirmed by UV-Vis absorption spectroscopy, X-ray diffraction (XRD), Fourier trans-form infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis with energy dispersive X-ray analysis (EDX). SEM, TEM and EDX analysis reveals that spherical and hexagonal zinc oxide nanoparticle sizes were 27 ± 5 nm and 84 ± 2 nm respectively and chemical composition of zinc oxide were present. We synthesized different sized zinc oxide nanoparticles and explored the size-dependent antifungal activity against plant fungal pathogens. Highest zone of inhibition was observed in 25 μg/ml of 27 ± 5 nm size zinc oxide nanoparticles against Aspergillus flavus and Aspergillus niger. Parthenium mediated zinc oxide nanoparticles were synthesized and proved to be good antifungal agents and environment friendly.

  12. Ultrasonic synthesis of two new zinc(II) bipyridine coordination polymers: New precursors for preparation of zinc(II) oxide nano-particles.

    PubMed

    Fard, Mohammad Jaafar Soltanian; Hayati, Payam; Firoozadeh, Azita; Janczak, Jan

    2017-03-01

    Nanoparticles of two zinc(II) coordination polymers (CPs), [Zn(μ-4,4'-bipy)Cl2]n (1) and [Zn(μ-4,4'-bipy)Br2]n (2) L=bpy=4,4'-bipyridine ligand, have been synthesized by use of a sonochemical process and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRPD), Fourier transform infrared spectroscopy (FTIR) spectroscopy and elemental analyses. The single crystal X-ray data of compounds 1 and 2 imply that the Zn(+2) ions are four coordinated. Topological analysis shows that 1D coordination networks of 1 and 2 can be classified as underlying nets of topological types 2C1. Nanoparticles of zinc(II) oxide have been prepared by calcination of two different zinc (II) CPs at 450°C that were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD) and IR spectroscopy.

  13. Biomineralization-Inspired Preparation of Zinc Hydroxide Carbonate/Polymer Hybrids and Their Conversion into Zinc Oxide Thin-Film Photocatalysts.

    PubMed

    Matsumura, Shunichi; Horiguchi, Yoshimasa; Nishimura, Tatsuya; Sakai, Hideki; Kato, Takashi

    2016-05-17

    The development of ZnO thin films has been achieved through the conversion of zinc hydroxide carbonate thin-film crystals. Crystallization of this compound is induced by a biomineralization-inspired method with polymer-stabilized amorphous precursors. The crystals grow radially on polymer matrices, leading to the formation of zinc hydroxide carbonate/polymer thin-film hybrids that fully cover the substrate. These hybrids are converted into ZnO and retain their thin-film morphologies. The resultant ZnO thin films exhibit a preferential crystallographic orientation that is attributed to the alignment of zinc hydroxide carbonate crystals before conversion. In addition, a photocatalytic function of the ZnO thin films has been demonstrated by analyzing the oxidation reaction of 2-propanol. The biomineralization-inspired approach reported herein is a promising way to develop ZnO materials with controlled morphologies and structures for photocatalytic applications.

  14. Greener syntheses of metallic nanoparticles and zinc oxide nanopowders

    NASA Astrophysics Data System (ADS)

    Samson, Jacopo

    In recent years, nanotechnology and nanomaterials synthesis have attracted a great deal of attention in the scientific community. Nanomaterials display size and morphology-related optical properties that differ from their bulk counterparts and therefore can be used for many applications in different fields such as biomedicine, electronics, antibacterial agents, and energy. Attempts to fabricate different morphologies of metallic and metal oxide nanoparticles (NPs) have successfully yielded attractive nanostructures such as particles, rods, helices, combs, tetra-pods, and flowers, all displaying properties mainly related to their enhanced surface area and/or aspect ratios. Most of the above mentioned nanomaterials productions have employed harsh synthetic routes such as high temperatures, low pressures, and the use of costly equipments. Here we show how a greener approach to nanomaterials synthesis is feasible with both minimization of aqueous precursors, energy and employment of a multi-block heater for temperature control. We present in this thesis several methods for the preparation of NPs of several materials that focus on minimizing the environmental impact of the synthesis itself. First, we describe the use of the toroidal form of plasmid DNA as a rigid narrowly dispersed bio-polymeric nanocavity, which mold the formation of disc-shaped nanoparticles of several types of metals. This approach exploits several properties of plasmid DNA: (a) DNA affinity for metal cations, (b) toroidal plasmid DNA structures which are favored by metal ionic binding, and (c) the ability to vary plasmid size. Herein, we present a complementary synthetic method based on a kinetic approach wherein the plasmid DNA acts as a template to initiate and control the formation of Au and other metallic NPs by incubation at elevated temperatures. Also reported herein is a simple, scalable hydrothermal method to make ZnO NPs that exploits temperature to precisely control the range of pH values

  15. A new extraction method for the preparation of zinc oxide nanoparticles in aqueous two-phase systems

    NASA Astrophysics Data System (ADS)

    Voshkin, A. A.; Shkinev, V. M.; Zakhodyaeva, Yu. A.

    2017-02-01

    An extraction method was suggested for the preparation of differently shaped nano- and micrometer- sized zinc oxide particles at the interface boundary of aqueous two-phase systems based on polyethylene glycol (polyethylene oxide) and sodium sulfate using NaOH and aqueous ammonia as precipitating agents.

  16. Interactions of Zircaloy cladding with gallium: 1998 midyear status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

    1998-06-01

    A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge}300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  17. Interactions of zircaloy cladding with gallium -- 1997 status

    SciTech Connect

    Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

    1997-11-01

    A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge} 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

  18. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  19. Metal catalyst for low-temperature growth of controlled zinc oxide nanowires on arbitrary substrates.

    PubMed

    Kim, Baek Hyun; Kwon, Jae W

    2014-03-14

    Zinc oxide nanowires generated by hydrothermal method present superior physical and chemical characteristics. Quality control of the growth has been very challenging and controlled growth is only achievable under very limited conditions using homogeneous seed layers with high temperature processes. Here we show the controlled ZnO nanowire growth on various organic and inorganic materials without the requirement of a homogeneous seed layer and a high temperature process. We also report the discovery of an important role of the electronegativity in the nanowire growth on arbitrary substrates. Using heterogeneous metal oxide interlayers with low-temperature hydrothermal methods, we demonstrate well-controlled ZnO nanowire arrays and single nanowires on flat or curved surfaces. A metal catalyst and heterogeneous metal oxide interlayers are found to determine lattice-match with ZnO and to largely influence the controlled alignment. These findings will contribute to the development of novel nanodevices using controlled nanowires.

  20. Nitric oxide inhibits the formation of zinc protoporphyrin IX and protoporphyrin IX.

    PubMed

    Wakamatsu, Jun-ichi; Hayashi, Nobutaka; Nishimura, Takanori; Hattori, Akihito

    2010-01-01

    The aim of this study was to elucidate the mechanism by which curing agents, especially nitrite, inhibit the formation of zinc protoporphyrin IX (ZPP) in dry-cured hams such as Parma ham. The oxidation-reduction potential of model solutions was increased by the addition of nitrite, but it was not clear whether the formation of ZPP is inhibited by the oxidizing property of nitrite. The effect of nitric oxide (NO) produced from nitrite on the formation of ZPP was examined. The amount of ZPP formed was decreased by the addition of NO donors. The amount of protoporphyrin IX (PPIX), which is the precursor of ZPP, was also decreased by the addition of NO donors. It is concluded that NO produced from nitrite inhibited the formation of PPIX and ZPP was therefore not formed in cured meat products with the addition of nitrite or nitrate.