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Sample records for gallium zinc oxide

  1. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  2. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  3. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    NASA Astrophysics Data System (ADS)

    Guo, Li Qiang; Zhu, Li Qiang; Ding, Jian Ning; Huang, Yu Kai

    2015-08-01

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  4. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

    2014-04-01

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  5. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih; Sze, Simon M.

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  6. Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

    SciTech Connect

    Choi, Seung-Ha; Jung, Woo-Shik; Park, Jin-Hong

    2012-11-19

    In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ({alpha}-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R{sub s} measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the {alpha}-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in {alpha}-IGZO was dramatically increased, contributing to the decrease of resistivity ({rho}) from 1.96 {Omega} cm (as-deposited {alpha}-IGZO) to 1.33 Multiplication-Sign 10{sup -3}{Omega} cm (350 Degree-Sign C annealed {alpha}-IGZO).

  7. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  8. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  9. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  10. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  11. In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo

    2013-07-01

    The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

  12. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    NASA Astrophysics Data System (ADS)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  13. Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Toru; Yagi, Takashi; Oka, Nobuto; Jia, Junjun; Yamashita, Yuichiro; Hattori, Koichiro; Seino, Yutaka; Taketoshi, Naoyuki; Baba, Tetsuya; Shigesato, Yuzo

    2013-02-01

    We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In:Ga:Zn= 1:1:0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O2 sputtering gas. The carrier density of the films was systematically controlled from 1014 to >1019 cm-3 by varying the O2 flow ratio. Their Hall mobility was slightly higher than 10 cm2·V-1·s-1. Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was ˜5.4×10-7 m2·s-1 and was almost independent of the carrier density. The average thermal conductivity was 1.4 W·m-1·K-1.

  14. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

  15. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  16. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  17. Surface Composition, Work Function, and Electrochemical Characteristics of Gallium-Doped Zinc Oxide

    SciTech Connect

    Ratcliff, E. L.; Sigdel, A. K.; Macech, M. R.; Nebesny, K.; Lee, P. A.; Ginley, D. S.; Armstrong, N. R.; Berry, J. J.

    2012-06-30

    Gallium-doped zinc oxide (GZO) possesses the electric conductivity, thermal stability, and earth abundance to be a promising transparent conductive oxide replacement for indium tin oxide electrodes in a number of molecular electronic devices, including organic solar cells and organic light emitting diodes. The surface chemistry of GZO is complex and dominated by the hydrolysis chemistry of ZnO, which influences the work function via charge transfer and band bending caused by adsorbates. A comprehensive characterization of the surface chemical composition and electrochemical properties of GZO electrodes is presented, using both solution and surface adsorbed redox probe molecules. The GZO surface is characterized using monochromatic X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy after the following pretreatments: (i) hydriodic acid etch, (ii) potassium hydroxide etch, (iii) RF oxygen plasma etching, and (iv) high-vacuum argon-ion sputtering. The O 1s spectra for the GZO electrodes have contributions from the stoichiometric oxide lattice, defects within the lattice, hydroxylated species, and carbonaceous impurities, with relative near-surface compositions varying with pretreatment. Solution etching procedures result in an increase of the work function and ionization potential of the GZO electrode, but yield different near surface Zn:Ga atomic ratios, which significantly influence charge transfer rates for a chemisorbed probe molecule. The near surface chemical composition is shown to be the dominant factor in controlling surface work function and significantly influences the rate of electron transfer to both solution and tethered probe molecules.

  18. Structural, Electrical and Optical Properties of Gallium Doped Zinc Oxide Thin Films Prepared by Electron Beam Evaporation Technique

    SciTech Connect

    Nagarani, S.; Sanjeeviraja, C.

    2011-07-15

    High quality gallium doped zinc oxide (GZO) films are prepared by electron beam evaporation technique. The effect of substrate temperature on structural, electrical and optical properties was studied in detail. The prepared films are polycrystalline in nature with c-axis perpendicular to the substrate. The resistivity of the film decreases and the optical transparency increases as the substrate temperature increases from room temperature to 150 deg. C. The film produce the optical band gap of 3.47 eV.

  19. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  20. Sol-gel deposition and plasma treatment of intrinsic, aluminum-doped, and gallium-doped zinc oxide thin films as transparent conductive electrodes

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2015-09-01

    Zinc oxide and aluminum/gallium-doped zinc oxide thin films were deposited via sol-gel spin-coating technique. Employing plasma treatment as alternative to post thermal annealing, we found that the morphologies of these thin films have changed and the sheet resistances have been significantly enhanced. These plasma-treated thin films also show very good optical properties, with transmittance above 90% averaged over the visible wavelength range. Our best aluminum/gallium-doped zinc oxide thin films exhibit sheet resistances (Rs) of ~ 200 Ω/sq and ~ 150 Ω/sq, respectively.

  1. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  2. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    NASA Astrophysics Data System (ADS)

    Hendrickson, Joshua R.; Vangala, Shivashankar; Nader, Nima; Leedy, Kevin; Guo, Junpeng; Cleary, Justin W.

    2015-11-01

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  3. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    PubMed

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-01-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning. PMID:26138510

  4. Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

    PubMed

    Agrawal, Ravi; Espinosa, Horacio D

    2011-02-01

    Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

  5. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    NASA Astrophysics Data System (ADS)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  6. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    SciTech Connect

    Arora, H.; Malinowski, P. E. Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  7. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    PubMed

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-01-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  8. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    PubMed

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  9. Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.

    PubMed

    Lee, Changhun; Ko, Yoonduk; Kim, Youngsung

    2013-12-01

    Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays. PMID:24266182

  10. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  11. Electromechanical properties of amorphous indium-gallium-zinc-oxide transistors structured with an island configuration on plastic

    NASA Astrophysics Data System (ADS)

    Park, Chang Bum; Na, Hyung Il; Yoo, Soon Sung; Park, Kwon-Shik

    2016-03-01

    A comparative study of the electromechanical properties was carried out on a low-temperature-processed amorphous indium-gallium-zinc-oxide thin-film transistor, particularly with regard to the structural design of the device under the stress accumulation of an outward bending surface. Shown herein is the reliable electromechanical integrity of island-structured devices against the mechanical strain at bending radii of mm order. The onset of crack strain also closely corresponded to the electrical failure of the stressed device. These results revealed that the island configuration on the bending surface effectively suppresses the stress accumulation on sheets composed of inorganic stacked layers in a uniaxial direction.

  12. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation. PMID:27007748

  13. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    NASA Astrophysics Data System (ADS)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  14. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  15. Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2014-04-07

    We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 °C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 °C.

  16. Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress

    SciTech Connect

    Lee, Sangwon; Jeon, Kichan; Park, Jun-Hyun; Kim, Sungchul; Kong, Dongsik; Kim, Dong Myong; Kim, Dae Hwan; Kim, Sangwook; Kim, Sunil; Hur, Jihyun; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Park, Youngsoo; Jung, U-In

    2009-09-28

    Bipolar ac stress-induced instability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is comparatively investigated with that under a positive dc gate bias stress. While the positive dc gate bias stress-induced threshold voltage shift ({delta}V{sub T}) is caused by the charge trapping into the interface/gate dielectric as reported in previous works, the dominant mechanism of the ac stress-induced {delta}V{sub T} is observed to be due to the increase in the acceptorlike deep states of the density of states (DOS) in the a-IGZO active layer. Furthermore, it is found that the variation of deep states in the DOS makes a parallel shift in the I{sub DS}-V{sub GS} curve with an insignificant change in the subthreshold slope, as well as the deformation of the C{sub G}-V{sub G} curves.

  17. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

    NASA Astrophysics Data System (ADS)

    Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun

    2016-08-01

    The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105 s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

  18. Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications

    NASA Astrophysics Data System (ADS)

    Bhosle, V.; Prater, J. T.; Yang, Fan; Burk, D.; Forrest, S. R.; Narayan, J.

    2007-07-01

    We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 °C and 1×10-3 Torr showed predominant ⟨0001⟩ orientation with a metallic behavior and a resistivity of 2×10-4 Ω cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25±0.05%) is achieved on a Zn0.95Ga0.05O/Cu-phthalocyanine/C60 double-heterojunction solar cell.

  19. Sol-gel deposited aluminum-doped and gallium-doped zinc oxide thin-film transparent conductive electrodes with a protective coating of reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Zhu, Zhaozhao; Mankowski, Trent; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-04-01

    Using a traditional sol-gel deposition technique, we successfully fabricated aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO) thin films on glass substrates. Employing a plasma treatment method as the postannealing process, we produced thin-film transparent conductive electrodes exhibiting excellent optical and electrical properties, with transmittance greater than 90% across the entire visible spectrum and the near-infrared range, as well as good sheet resistance under 200 Ω/sq. More importantly, to improve the resilience of our fabricated thin-film samples at elevated temperatures and in humid environments, we deposited a layer of reduced graphene oxide (rGO) as protective overcoating. The stability of our composite AZO/rGO and GZO/rGO samples improved substantially compared to that of their counterparts with no rGO coating.

  20. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics. PMID:27430635

  1. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    PubMed

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

  2. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

    NASA Astrophysics Data System (ADS)

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-02-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively.

  3. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

    PubMed

    Tak, Young Jun; Ahn, Byung Du; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively. PMID:26902863

  4. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

    PubMed

    Everaerts, Ken; Zeng, Li; Hennek, Jonathan W; Camacho, Diana I; Jariwala, Deep; Bedzyk, Michael J; Hersam, Mark C; Marks, Tobin J

    2013-11-27

    Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

  5. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

    PubMed

    Secor, Ethan B; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C

    2016-07-13

    Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications. PMID:27327555

  6. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

    NASA Astrophysics Data System (ADS)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-01

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiNx). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiNx junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm2 on-current density measured at -7 V; lower than 7.3 × 10-9 A/cm2 off-current density; 2.53 ideality factor; and high rectifying ratio of 108-109. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiNx/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  7. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    NASA Astrophysics Data System (ADS)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2015-11-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen-metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced

  8. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    NASA Astrophysics Data System (ADS)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  9. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  10. Stabilities of amorphous indium gallium zinc oxide thin films under light illumination with various wavelengths and intensities

    NASA Astrophysics Data System (ADS)

    Kim, Ju-Yeon; Jeong, So Hyeon; Yu, Kyeong Min; Yun, Eui-Jung; Bae, Byung Seong

    2014-08-01

    We investigated the photo responses of an amorphous indium gallium zinc oxide (a-IGZO) thin film under light illumination with various wavelengths and intensities. By using the measured photo-conductivities of a-IGZO thin films, we extracted the photo excitation activation energy and dark relaxation activation energy through extended stretched exponential analysis. The stretched exponential analysis was found to describe well both the photoexcitation and the dark-relaxation characteristics. These analyses indicated that recombination takes place more slowly and through activation processes that are more deeply bound with the broader distribution of activation energies (Eac) than those corresponding to the photo-generation process. The longer wavelength of the incident light, the slower the dark-relaxation occurs because of the formation of higher Eac for the ionized oxygen vacancy (Vo2+) states. For the dark-relaxation process, we also observed that the stretching exponent increases and the distribution of energy levels became narrower for longer wavelengths. This suggests that the neutralization of Vo2+ to Vo is slower for longer wavelengths due to the higher energy barrier height (Eac) for the neutralization of Vo2+.

  11. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    SciTech Connect

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  12. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

    PubMed Central

    2014-01-01

    Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films. PMID:25352768

  13. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    SciTech Connect

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin; Migliorato, Piero

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  14. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  15. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    SciTech Connect

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  16. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    NASA Astrophysics Data System (ADS)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  17. Microscopic structure and electrical transport property of sputter-deposited amorphous indium-gallium-zinc oxide semiconductor films

    NASA Astrophysics Data System (ADS)

    Yabuta, H.; Kaji, N.; Shimada, M.; Aiba, T.; Takada, K.; Omura, H.; Mukaide, T.; Hirosawa, I.; Koganezawa, T.; Kumomi, H.

    2014-06-01

    We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirmed that the sputtered a-IGZO films consist of a columnar structure. However, krypton gas adsorption measurement revealed that boundaries of the columnar grains are not open-pores. The conductivity of the sputter-deposited a-IGZO films shows a change as large as seven orders of magnitude depending on post-annealing atmosphere; it is increased by N2-annealing and decreased by O2-annealing reversibly, at a temperature as low as 300°C. This large variation in conductivity is attributed to thermionic emission of carrier electrons through potential barriers at the grain boundaries, because temperature dependences of the carrier density and the Hall mobility exhibit thermal activation behaviours. The optical band-gap energy of the a-IGZO films changes between before and after annealing, but is independent of the annealing atmosphere, in contrast to the noticeable dependence of conductivity described above. For exploring other possibilities of a-IGZO, we formed multilayer films with an artificial periodic lattice structure consisting of amorphous InO, GaO, and ZnO layers, as an imitation of the layer-structured InGaZnO4 homologous phase. The hall mobility of the multilayer films was almost constant for thicknesses of the constituent layer between 1 and 6 Å, suggesting rather small contribution of lateral two-dimensional conduction It increased with increasing the thickness in the range from 6 to 15 Å, perhaps owing to an enhancement of two-dimensional conduction in InO layers.

  18. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride.

    PubMed

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  19. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

    PubMed Central

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

    2016-01-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

  20. Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride.

    PubMed

    Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L; Roy, Ajit K; Luo, Tengfei

    2016-03-01

    Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.

  1. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    PubMed

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions. PMID:25971080

  2. Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications

    NASA Astrophysics Data System (ADS)

    Yamauchi, Yoshimitsu; Kamakura, Yoshinari; Isagi, Yousuke; Matsuoka, Toshimasa; Malotaux, Satoshi

    2013-09-01

    A novel floating-gate oxide semiconductor (FLOTOS) memory using a wide-band-gap indium-gallium-zinc oxide (IGZO) is presented for low-power system-on-panel applications. An IGZO thin-film-transistor (TFT) is used as a memory transistor for controlling read current as well as a switching transistor for storing charges in a storage capacitor (Cs). The FLOTOS memory is fabricated using a standard IGZO TFT process without any additional process or mask steps. The proposed precharge-assisted threshold voltage compensation technique makes it possible to realize an infinite number of write cycles and a low-power write operation with a bit-line voltage of 5 V. Furthermore, excellent data retention longer than 10 h is obtained at 60 °C even under the worst bias-stress condition of read operation with the ultra low off-state leakage (2.8×10-20 A/µm) of the IGZO TFTs, which is estimated to be smaller by more than 7 orders of magnitude than that of polycrystalline silicon TFTs.

  3. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NASA Astrophysics Data System (ADS)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  4. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

    SciTech Connect

    Gadre, Mandar J.; Alford, T. L.

    2011-08-01

    Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

  5. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    NASA Astrophysics Data System (ADS)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  6. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼10{sup 9} Ω for a device with the radius of 50 μm) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼10{sup 3} Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.

  7. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  8. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect

    Lai, Hsin-Cheng; Pei, Zingway; Jian, Jyun-Ruri; Tzeng, Bo-Jie

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

  9. Thermal oxidation of gallium arsenide

    SciTech Connect

    Monteiro, O.R.; Evans, J.W.

    1989-01-01

    Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 /sup 0/C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 /sup 0/C initially produces an epitaxial film of ..gamma..-Ga/sub 2/O/sub 3/. As the reaction proceeds, this film becomes polycrystalline and then transforms to ..beta..-Ga/sub 2/O/sub 3/. This film contains small crystallites of As/sub 2/O/sub 5/ and As/sub 2/O/sub 3/ in the case of the chromium doped samples, whereas only the former was detected in the case of silicon and tellurium doped samples. Elemental arsenic was always found at the interface between the oxide and GaAs. Chromium doped gallium also exhibited a slower oxidation kinetics than the other materials.

  10. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    SciTech Connect

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  11. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    NASA Astrophysics Data System (ADS)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  12. A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

    NASA Astrophysics Data System (ADS)

    Ohshima, Kazuaki; Kobayashi, Hidetomo; Nishijima, Tatsuji; Yoneda, Seiichi; Tomatsu, Hiroyuki; Maeda, Shuhei; Tsukida, Kazuki; Takahashi, Kei; Sato, Takehisa; Watanabe, Kazunori; Yamamoto, Ro; Kozuma, Munehiro; Aoki, Takeshi; Yamade, Naoto; Ieda, Yoshinori; Miyairi, Hidekazu; Atsumi, Tomoaki; Shionoiri, Yutaka; Kato, Kiyoshi; Maehashi, Yukio; Koyama, Jun; Yamazaki, Shunpei

    2014-01-01

    A low-power normally-off microcontroller unit (NMCU) having state-retention flip-flops (SRFFs) using a c-axis aligned crystalline oxide semiconductor (CAAC-OS) such as indium gallium zinc oxide (IGZO) transistors and employing a distributed backup and recovery method (distributed method) is fabricated. Compared to an NMCU employing a centralized backup and recovery method (centralized method), the NMCU employing the distributed method can be powered off approximately 75 µs earlier after main processing and can start the main processing approximately 75 µs earlier after power-on. The NMCU employing the distributed method can reduce power overhead by approximately 85% and power consumption by approximately 18% compared to the NMCU employing the centralized method. The NMCU employing the distributed method can retain data even when it is powered off, can back up data at high speed, and can start effective processing immediately after power-on. The NMCU could be applied to a low-power MCU.

  13. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    SciTech Connect

    Watanabe, Ken; Lee, Dong-Hee; Sakaguchi, Isao; Haneda, Hajime; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo; Ohashi, Naoki

    2013-11-11

    An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

  14. Low temperature near infrared plasmonic gas sensing of gallium and aluminum doped zinc oxide thin films from colloidal inks (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Sturaro, Marco; Della Gaspera, Enrico; Martucci, Alessandro; Guglielmi, Massimo

    2015-08-01

    We obtained Gallium-doped and Aluminum-doped Zinc Oxide nanocrystals by non aqueous colloidal heat-up synthesis. These nanocrystals are transparent in the visible range but exhibit localized surface plasmon resonances (LSPRs) in the near IR range, tunable and shiftable with dopant concentration (up to 20% mol nominal). GZO and AZO inks can be deposited by spin coating, dip coating or spray coating on glass or silicon, leading to uniform and high optical quality thin films. To enhance absorbtion in the infrared region, samples can be annealed in inert or reductant atmosphere (N2/Argon or H2 in Argon) resulting in plasmon intensity enhancement due to oxygen vacancies and conduction band electrons density increment. Then IR plasmon has been exploited for gas sensing application, according to the plasmon shifting for carrier density variations, due to electrons injection or removal by the target gas/sample chemical interactions. To obtain a functional sensor at low temperature, another treatment was investigated, involving surfanctant removal by dipping deposited films in a solution of organic acid, tipically oxalic acid in acetonitrile; such process could pave the way to obtain similar sensors deposited on plastics. Finally, GZO and AZO thin films proved sensibility to H2 and NOx, and in particular circumstances also to CO, from room temperature to 200°C. Sensibility behavior for different dopant concentration and temperture was investigated both in IR plasmon wavelengths (~2400 nm) and zinc oxide band gap (~370 nm). An enhancement in sensitivity to H2 is obtained by adding Pt nanoparticles, exploiting catalytic properties of Platinum for hydrogen splitting.

  15. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    NASA Astrophysics Data System (ADS)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  16. Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

    SciTech Connect

    Coleman, J.P.; Monzyk, B.F.

    1988-07-26

    The method of dissociating gallium arsenide into a gallium-containing component and an arsenic-containing component, is described which comprises contacting the gallium arsenide with an oxidizing agent and a liquid comprising hydroxamic acid to convert the gallium to a gallium-hydroxamic acid complex and to oxidize the arsenic to a positive valence state.

  17. Improving source/drain contact resistance of amorphous indium-gallium-zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    NASA Astrophysics Data System (ADS)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  18. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    NASA Astrophysics Data System (ADS)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  19. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 Ω cm by heat treatment at 350 °C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 Ω cm and a refractive index of 2.1.

  20. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    NASA Astrophysics Data System (ADS)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  1. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-01

    We report the abnormal behavior of the threshold voltage (VTH) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (VTG), while bottom gate bias (VBG) is less effect than VTG. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO2/a-IGZO and also the existence of large amount of In+ under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH- at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of VTG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  2. Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment

    SciTech Connect

    Jhu, Jhe-Ciou; Chang, Ting-Chang; Chang, Geng-Wei; Tai, Ya-Hsiang; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

    2013-11-28

    An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

  3. State retention flip flop architectures with different tradeoffs using crystalline indium gallium zinc oxide transistors implemented in a 32-bit normally-off microprocessor

    NASA Astrophysics Data System (ADS)

    Sjökvist, Niclas; Ohmaru, Takuro; Isobe, Atsuo; Tsutsui, Naoaki; Tamura, Hikaru; Uesugi, Wataru; Ishizu, Takahiko; Onuki, Tatsuya; Ohshima, Kazuaki; Matsuzaki, Takanori; Mimura, Hidetoshi; Hirose, Atsushi; Suzuki, Yasutaka; Ieda, Yoshinori; Atsumi, Tomoaki; Shionoiri, Yutaka; Kato, Kiyoshi; Goto, Gensuke; Koyama, Jun; Fujita, Masahiro; Yamazaki, Shunpei

    2014-01-01

    As leakage power continues to increase when transistor sizes are downscaled, it becomes increasingly hard to achieve low power consumption in modern chips. Normally-off processors use state-retention and non-volatile circuits to make power gating more efficient with less static power. In this paper, we propose two novel state-retention flip-flop designs based on a parallel and series retention circuit architectures utilizing crystalline indium gallium zinc oxide transistors, which can achieve state retention with zero static power. To demonstrate the application of these different designs, they are implemented in a 32-bit normally-off microprocessor with an energy break-even time of 1.47 µs for the parallel type design and 0.93 µs for the series type design, at a clock frequency of 15 MHz. We show that decreasing the power supply duty cycle to 0.9%, the average current of the processor core can be decreased by over 99% using either type of flip-flop.

  4. Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process

    NASA Astrophysics Data System (ADS)

    Asami, Yoshinobu; Kurata, Motomu; Okazaki, Yutaka; Higa, Eiji; Matsubayashi, Daisuke; Okamoto, Satoru; Sasagawa, Shinya; Moriwaka, Tomoaki; Kakehata, Tetsuya; Yakubo, Yuto; Kato, Kiyoshi; Hamada, Takashi; Sakakura, Masayuki; Hayakawa, Masahiko; Yamazaki, Shunpei

    2016-04-01

    To achieve both low power consumption and high-speed operation, we fabricated c-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO (\\text{In}:\\text{Ga}:\\text{Zn} = 1:1:1 in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10-16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation.

  5. Meyer-Neldel Rule and Extraction of Density of States in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending

    NASA Astrophysics Data System (ADS)

    Jeong, Jaewook; Kyeong Jeong, Jae; Park, Jin-Seong; Mo, Yeon-Gon; Hong, Yongtaek

    2010-03-01

    In this study, we analyzed the temperature-dependent characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). We observed that a-IGZO TFTs obey the Meyer-Neldel rule (MN rule) at low gate-to-source voltage (VGS) and the inverse MN rule at high VGS, both of which can be explained by the statistical shift of Fermi level and electrostatic potential. Large Fermi level movement for small VGS change and the inverse MN rule, which are hardly observed for conventional amorphous TFTs, indicate that there is a very low density of state (DOS) in the sub-bandgap region for a-IGZO TFTs and the performance of TFTs is not affected by contact characteristics, respectively. By using the field-effect method and considering surface band bending, we extracted the DOS in the sub-bandgap region, the distribution of which is clearly distinguished by deep and tail states. The calculated parameters for tail and deep states were Nta = 3.5 ×1017 cm-3 eV-1, Eta = 0.18 eV, Nda = 1.6×1016 cm-3 eV-1, and σda = 0.21 eV.

  6. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

    PubMed

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  7. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    PubMed Central

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. PMID:26972476

  8. Effects of electron trapping and interface state generation on bias stress induced in indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Han, Chang-Hoon; Kim, Sang-Sub; Kim, Kwang-Ryul; Baek, Do-Hyun; Kim, Sang-Soo; Choi, Byoung-Deog

    2014-08-01

    The electrical characteristics of bias temperature stress (BTS) induced in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) were studied. We analyzed the threshold voltage (VTH) shift on the basis of the effects of positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), and applied it to the stretched-exponential model. Both stress temperature and bias are considered as important factors in the electrical instabilities of a-IGZO TFTs, and the stretched-exponential equation is well fitted to the stress condition. VTH for the drain current-gate voltage (IDS-VGS) curve and flat-band voltage (VFB) for the capacitance-voltage (C-V) curve move in the positive direction when PBTS is induced. However, in the case of NBTS, they move slightly in the negative direction. To clarify the VTH shift phenomenon by electron and hole injection, the average effective energy barrier (Eτ) is extracted, and the extracted values of Eτ under PBTS and NBTS are about 1.33 and 2.25 eV, respectively. The oxide trap charges (Not) of PBTS and NBTS calculated by C-V measurement are 4.4 × 1011 and 1.49 × 1011 cm-2, respectively. On the other hand, the border trap charges of PBTS and NBTS are 6.7 × 108 and 1.7 × 109 cm-2, respectively. This indicates that the increased interface trap charge, after PBTS is induced, captures electrons during detrap processing from the border trap to the conduction band, valence band, and interface trap.

  9. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  10. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    PubMed

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

  11. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    SciTech Connect

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk E-mail: drlife@kookmin.ac.kr

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  12. Thermodynamic properties of lanthanum in gallium-zinc alloys

    NASA Astrophysics Data System (ADS)

    Dedyukhin, A. S.; Shepin, I. E.; Kharina, E. A.; Shchetinskiy, A. V.; Volkovich, V. A.; Yamshchikov, L. F.

    2016-09-01

    Thermodynamic properties of lanthanum were determined in gallium-zinc alloys of the eutectic and over-eutectic compositions. The electromotive force measurements were used to determine thermodynamic activity and sedimentation technique to measure solubility of lanthanum in liquid metal alloys. Temperature dependencies of lanthanum activity, solubility and activity coefficients in alloys with Ga-Zn mixtures containing 3.64, 15 and 50 wt. % zinc were obtained.

  13. Zinc oxide overdose

    MedlinePlus

    Zinc oxide is an ingredient in many products. Some of these are certain creams and ointments used ... prevent or treat minor skin burns and irritation. Zinc oxide overdose occurs when someone eats one of ...

  14. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    SciTech Connect

    Flewitt, A. J.; Powell, M. J.

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  15. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  16. UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bajpai, Ritu

    The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the

  17. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    SciTech Connect

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  18. Self- and zinc diffusion in gallium antimonide

    SciTech Connect

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  19. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

    SciTech Connect

    An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin

    2014-08-04

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

  20. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  1. Mesoporous gallium oxide structurally stabilized by yttrium oxide

    SciTech Connect

    Yada, Mitsunori; Ohya, Masahumi; Machida, Masato; Kijima, Tsuyoshi

    2000-05-16

    Since the synthesis of mesoporous silicas such as MCM-41 and FSM-16 with large internal surface areas and uniform pore sizes, the surfactant templating method has been used to synthesize mesoporous metal oxides, including titanium, aluminum, niobium, and tantalum oxides. The mesostructured metal oxides are taken to be useful not only as catalysts and separating or adsorbing agents but also as functional host materials with optically, electrically, or magnetically unique properties, owing to the shape-specific and/or quantum effects of their thin inorganic skeletons. Mesoporous zirconium oxide and phosphate and hafnium oxide are promising as acid catalysts. Layered and hexagonal mesostructured titanium oxides, for example, were observed to be photocatalytically active. Aluminum and gallium oxides with a mesoporous structure are also expected to serve as a catalytic of other functional material. In this paper, the authors report the synthesis and characterization of mesoporous gallium oxide stabilized by yttrium oxide.

  2. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    PubMed

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries. PMID:24221957

  3. Low-power scan driver embedded with level shifter using depletion-mode amorphous indium-gallium-zinc-oxide thin-film transistors for high-resolution flat-panel displays

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Hee; Kwon, Oh-Kyong

    2014-01-01

    A low-power scan driver embedded with a level shifter using depletion-mode amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) is proposed for high-resolution flat-panel displays (FPDs). In order to achieve low power consumption, the scan driver uses clock signals with a reduced voltage swing. Furthermore, the level shifter is implemented without using a diode-connected TFT. This scan driver is simulated at an output voltage swing of 30 V and an operating frequency (fop) of 153.6 kHz, which satisfy the driving conditions for 10-in. wide quadruple extended graphics array (WQXGA, 1600 × 2560) FPDs with a frame frequency of 60 Hz. The simulation results of the proposed scan driver demonstrate the successful operation even at a threshold voltage shift (ΔVth) of -2.0 V. The power consumption of the proposed scan driver per ten stages is 0.41 mW, which is 80.75% less than that reported in a previous work.

  4. Doped zinc oxide microspheres

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  5. Doped zinc oxide microspheres

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  6. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE PAGESBeta

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  7. Arsenic doped zinc oxide

    SciTech Connect

    Volbers, N.; Lautenschlaeger, S.; Leichtweiss, T.; Laufer, A.; Graubner, S.; Meyer, B. K.; Potzger, K.; Zhou Shengqiang

    2008-06-15

    As-doping of zinc oxide has been approached by ion implantation and chemical vapor deposition. The effect of thermal annealing on the implanted samples has been investigated by using secondary ion mass spectrometry and Rutherford backscattering/channeling geometry. The crystal damage, the distribution of the arsenic, the diffusion of impurities, and the formation of secondary phases is discussed. For the thin films grown by vapor deposition, the composition has been determined with regard to the growth parameters. The bonding state of arsenic was investigated for both series of samples using x-ray photoelectron spectroscopy.

  8. Zinc Oxide Nanophotonics

    NASA Astrophysics Data System (ADS)

    Choi, Sumin; Aharonovich, Igor

    2015-12-01

    The emerging field of nanophotonics initiated a dedicated study of single photon sources and optical resonators in new class of materials. One such material is zinc oxide (ZnO) that has been long considered only for classical light-emitting applications. However, it recently showed promise for quantum photonics technologies. In this review, we highlight the recent advances in studying single emitters in ZnO, engineering of optical cavities and practical nanophotonics devices including nanolasers and electrically triggered devices. We finalize with an outlook at this promising area, as well as provide perspectives and open questions in solid state nanophotonics employing ZnO.

  9. Interstitial zinc clusters in zinc oxide

    NASA Astrophysics Data System (ADS)

    Gluba, M. A.; Nickel, N. H.; Karpensky, N.

    2013-12-01

    Doped zinc oxide (ZnO) exhibits anomalous Raman modes in the range of 270 to 870 cm-1. Commonly, the resonance at 275 cm-1 is attributed to the local vibration of Zn atoms in the vicinity of extrinsic dopants. We revisit this assignment by investigating the influence of isotopically purified zinc oxide thin films on the frequency of the vibrational mode around 275 cm-1. For this purpose, undoped and nitrogen-doped ZnO thin-films with Zn isotope compositions of natural Zn, 64Zn, 68Zn, and a 1:1 mixture of 64Zn and 68Zn were grown by pulsed laser deposition. The isotopic shift and the line shape of the Raman resonance around 275 cm-1 are analyzed in terms of three different microscopic models, which involve the vibration of (i) interstitial zinc atoms bound to extrinsic defects, (ii) interstitial diatomic Zn molecules, and (iii) interstitial zinc clusters. The energy diagram of interstitial Zn-Zn bonds in a ZnO matrix is derived from density functional theory calculations. The interstitial Zn-Zn bond is stabilized by transferring electrons from the antibonding orbital into the ZnO conduction band. This mechanism facilitates the formation of interstitial Zn clusters and fosters the common n-type doping asymmetry of ZnO.

  10. Gallium

    SciTech Connect

    1996-01-01

    Discovered in 1875 through a study of its spectral properties, gallium was the first element to be uncovered following the publication of Mendeleev`s Periodic Table. French chemist, P.E. Lecoq de Boisbaudran, named his element discovery in honor of his native country; gallium is derived from the Latin word for France-{open_quotes}Gallia.{close_quotes}. This paper describes the properties, sources, and market for gallium.

  11. Influence of doping with third group oxides on properties of zinc oxide thin films

    SciTech Connect

    Palimar, Sowmya Bangera, Kasturi V.; Shivakumar, G. K.

    2013-03-15

    The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10{sup 3} {Omega}{sup -1} cm{sup -1}. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

  12. Gallium Oxide Nanostructures for High Temperature Sensors

    SciTech Connect

    Chintalapalle, Ramana V.

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  13. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  14. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  15. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  16. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  17. 21 CFR 73.1991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.1991 Section 73.1991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1991 Zinc oxide. (a) Identity. (1) The color additive zinc... indirect process whereby zinc metal isolated from the zinc-containing ore is vaporized and then...

  18. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  19. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  20. Cerium, gallium and zinc containing mesoporous bioactive glass coating deposited on titanium alloy

    NASA Astrophysics Data System (ADS)

    Shruti, S.; Andreatta, F.; Furlani, E.; Marin, E.; Maschio, S.; Fedrizzi, L.

    2016-08-01

    Surface modification is one of the methods for improving the performance of medical implants in biological environment. In this study, cerium, gallium and zinc substituted 80%SiO2-15%CaO-5%P2O5 mesoporous bioactive glass (MBG) in combination with polycaprolactone (PCL) were coated over Ti6Al4 V substrates by dip-coating method in order to obtain an inorganic-organic hybrid coating (MBG-PCL). Structural characterization was performed using XRD, nitrogen adsorption, SEM-EDXS, FTIR. The MBG-PCL coating uniformly covered the substrate with the thickness found to be more than 1 μm. Glass and polymer phases were detected in the coating along with the presence of biologically potent elements cerium, gallium and zinc. In addition, in vitro bioactivity was investigated by soaking the coated samples in simulated body fluid (SBF) for up to 30 days at 37 °C. The apatite-like layer was monitored by FTIR, SEM-EDXS and ICP measurements and it formed in all the samples within 15 days except zinc samples. In this way, an attempt was made to develop a new biomaterial with improved in vitro bioactive response due to bioactive glass coating and good mechanical strength of Ti6Al4 V alloy along with inherent biological properties of cerium, gallium and zinc.

  1. Zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Chik, Hope Wuming

    Non-lithographic, bottom-up techniques have been developed to advance the state of the art and contribute to the development of new material structures, fabrication methods, devices, and applications using the Zinc Oxide material system as a demonstration vehicle. The novel low temperature catalytic vapour-liquid-solid growth process developed is technologically simple, inexpensive, and a robust fabrication technique offering complete control over the physical dimensions of the nanorod such as its diameter and length, and over the positioning of the nanorods for site-selective growth. By controlling the distribution of the Au catalysts with the use of a self-organized anodized aluminum oxide nanopore membrane as a template, we have been able to synthesize highly ordered, hexagonally packed, array of ZnO nanorods spanning a large area. These nanorods are single crystal, hexagonally shaped, indicative of the wurtzite structure, and are vertically aligned to the substrate. By pre-patterning the template, arbitrary nanorod patterns can be formed. We have also demonstrated the assembly of the nanorods into functional devices using controlled methods that are less resource intensive, easily scalable, and adaptable to other material systems, without resorting to the manipulation of each individual nanostructures. Examples of these devices include the random network device that exploits the common attributes of the nanorods, and those formed using an external field to control the nanorod orientation. Two and three terminal device measurements show that the as-grown nanorods are n-type doped, and that by controlling the external optical excitation and its test environment, the photoconductivity can be altered dramatically. Self assemble techniques such as the spontaneous formation of nanodendrites into complex networks of interconnects were studied. Controlled formation of interconnects achieved by controlling the placement of the catalyst is demonstrated by growing the

  2. Separation and recovery of gallium and indium from simulated zinc refinery residue by liquid-liquid extraction

    SciTech Connect

    Nishihama, Syouhei; Hirai, Takayuki; Komasawa, Isao

    1999-03-01

    The separation and recovery of gallium and indium from zinc refinery residue, using liquid-liquid extraction, has been investigated. The major components with the exception of zinc can be removed by extraction with tri-n-butyl phosphate at low aqueous acidity, and gallium and indium can be separated from the remaining major component, zinc, by extraction with bis(2-ethylhexyl)phosphoric acid (D2EHPA) using the correct conditions, at which effective separation may be feasible. Extraction equilibrium formulations for the ternary system containing gallium, indium, and zinc have been established up to high conversion conditions of the extractant to metal complexes, when D2EHPA is employed as the extractant and kerosene as the diluent. The scrubbing behavior for the process can also be expressed by the proposed extraction scheme. Simulation work based on the equilibrium studies shows that indium may be recovered effectively from the mixture of gallium and zinc with 98.9% overall fractional recovery and 100% purity when using 5.0 {times} 10{sup {minus}2} mol/L D2EHPA. Gallium may then be recovered from zinc with 87.9% overall fractional recovery and 99.1% purity using 1.0 {times} 10{sup {minus}2} mol/L D2EHPA.

  3. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  4. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  5. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  6. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  7. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  8. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  9. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  10. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  11. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  12. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of...

  13. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  14. 21 CFR 73.2991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Zinc oxide. 73.2991 Section 73.2991 Food and Drugs... ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2991 Zinc oxide. (a) Identity and specifications. The color additive zinc oxide shall conform in identity and specifications to the requirements of §...

  15. 21 CFR 182.8991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Zinc oxide. 182.8991 Section 182.8991 Food and... CONSUMPTION (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients § 182.8991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is generally recognized as safe when used...

  16. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... 1 § 582.5991 Zinc oxide. (a) Product. Zinc oxide. (b) Conditions of use. This substance is...

  17. Defect reactions in gallium antimonide studied by zinc and self-diffusion

    NASA Astrophysics Data System (ADS)

    Sunder, Kirsten; Bracht, Hartmut

    2007-12-01

    Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It is concluded that the changeover of interstitial Zn to substitutional gallium (Ga) sites is mainly mediated by Ga interstitials ( IGa). Fitting of the Zn profiles provides the relative contributions of IGa to Ga diffusion. This contribution is lower than the directly measured Ga diffusion coefficient indicating that Ga diffusion in GaSb is rather mediated by Ga vacancies than by Ga interstitials even under Ga-rich conditions. This finding supports transformation reactions between native point defects that are confirmed by first-principles total-energy calculations. In addition Ga and Sb diffusion experiments under H22 atmosphere were performed to reconcile the controversial data on self-diffusion in GaSb published by Weiler et al. and Bracht et al.

  18. Measuring Nanoscale Heat Transfer for Gold-(Gallium Oxide)-Gallium Nitride Interfaces as a Function

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester; Sun, Kai; Constantin, Costel; Giri, Ashutosh; Saltonstall, Christopher; Hopkins, Patrick; NanoSynCh Team; Exsite Team

    2014-03-01

    Gallium nitride (GaN) is considered the most important semiconductor after the discovery of Silicon. Understanding the properties of GaN is imperative in determining the utility and applicability of this class of materials to devices. We present results of time domain thermoreflectance (TDTR) measurements as a function of surface root mean square (RMS) roughness. We used commercially available 5mm x 5mm, single-side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a Wurtzite crystal structure and are slightly n-type doped. The GaN substrates were annealed in the open atmosphere for 10 minutes (900-1000 °C). This high-temperature treatment produced RMS values from 1-60 nm and growth of gallium oxide (GaO) as measured with an atomic force microscopy and transmission electron microscopy respectively. A gold film (80nm) was deposited on the GaN surface using electron beam physical vapor deposition which was verified using ellipsometry and profilometry. The TDTR measurements suggest that the thermal conductivity decays exponentially with RMS roughness and that there is a minimum value for thermal boundary conductance at a roughness of 15nm.

  19. Facile synthesis of gallium oxide hydroxide by ultrasonic irradiation of molten gallium in water.

    PubMed

    Kumar, Vijay Bhooshan; Gedanken, Aharon; Porat, Ze'ev

    2015-09-01

    This work describes the single-step synthesis of GaO(OH) by ultrasonic irradiation of molten gallium in warm water. The ultrasonic energy causes dispersion of the liquid gallium into micrometric spheres, as-well-as decomposition of some of the water into H and OH radicals. The OH radicals and the dissolved oxygen react on the surface of the gallium spheres to form crystallites of GaO(OH). These crystallites prevent the re-coalescence of the gallium spheres, and as the reaction proceeds all the gallium is converted into crystalline GaO(OH).

  20. Zinc hydroxide sulphate and its transformation to crystalline zinc oxide.

    PubMed

    Moezzi, Amir; Cortie, Michael B; McDonagh, Andrew M

    2013-10-28

    The thermal transformation of zinc hydroxide sulphate hydrate to zinc oxide has been examined using synchrotron X-ray diffraction, thermogravimetric analysis, scanning electron microscopy, and surface area measurements. By collecting X-ray diffraction data in situ, we found that the dehydration of zinc hydroxide sulphate pentahydrate proceeded in discrete steps to form anhydrous zinc hydroxide sulphate. This compound then decomposed to a mixture of zinc oxide and a compound tentatively identified as Zn3(OH)2(SO4)2 at ~235 °C. At ~360 °C, the final dehydroxylation occurred with the formation of zinc oxy-sulphate, Zn3O(SO4)2, which then decomposed to ZnO at about ~800 °C. Interruption of the dehydration process can be used to synthesize the intermediate compounds.

  1. Spectroscopy of oxide-gallium nitride interfaces

    NASA Astrophysics Data System (ADS)

    Craft, Hughes Spalding

    GaN-based devices are of interest for applications requiring high-frequency, high-power operation at elevated temperatures. As in traditional, silicon-based devices, integration of semiconducting phases with insulators is critical. Additionally, applications involving the integration of GaN with polar oxides such as perovskite ferroelectrics have been proposed, due to the coupling that may be achieved between the respective polar vector. Devices utilizing such a coupling behavior would make possible two-dimensional electron gases of high charge densities that could be modulated by the oxide's polarization. The current status of oxide-GaN research is far behind that of oxide-Si research, and large-scale realization of GaN devices will require detailed understanding of oxide-GaN interfaces. This thesis focuses on the characterization of several oxide-GaN interfaces using x-ray photoelectron spectroscopy (XPS), as well as the identification of issues relating to the GaN surface. The rocksalt oxides MgO and CaO have been proposed as candidates for GaN MOSFET gate oxides, passivating layers, and buffer layers in GaN-ferroelectric structures. Thus, knowledge of film growth modes and band alignments is critical. Utilizing in-vacuo molecular beam epitaxy (MBE) and XPS, the growth of MgO on GaN was found to occur by the Volmer-Weber mode, with coalescence occurring at ˜12 nm. This coalescence behavior was not found to affect the band alignment. As measured by XPS, the valence band offset at the MgO-GaN interface is 1.2 +/- 0.2 eV, leading to a conduction band offset of 3.5 eV. A similar study was undertaken for the CaO-GaN system, in which more rapid coalescence was observed, leading to the conclusion of a Stranski-Krastanov growth mode. The difference in coalescence behavior is attributed to the increased reactivity of the CaO surface. The band offsets at the CaO-GaN interface were found to be 1.0 +/- 0.2 eV at the valence band, and 2.5 eV at the conduction band. The band

  2. Quantum Monte Carlo models of substitutional point defects in zinc oxide and zinc selenide

    NASA Astrophysics Data System (ADS)

    Yu, Jaehyung; Ertekin, Elif

    2015-03-01

    Introducing dopants into semiconductors allows manipulation of electrical and optical properties, useful for applications such as optoelectronics and photovoltaics. While first principles quantitative descriptions of the defects properties in semiconductors are critical to understanding and engineering dopants in semiconductors, obtaining accurate descriptions has proven challenging in the past. Here we demonstrate the use of quantum Monte Carlo (QMC) methods to describing the properties of point defects in zinc oxide and zinc selenide. Due to its direct treatment of electron correlation, the QMC method is capable of accurate calculation of band gaps and defect behaviors. We describe the energetics and potential barrier to forming gallium DX-center defects according to QMC in zinc selenide, and compare the description to those of conventional and hybrid DFT. We also use QMC to determine the defect transition levels for nitrogen defects in zinc oxide, and show that QMC obtains descriptions that are in good agreement with GW and beyond-DFT approaches. Our results demonstrate the importance of accurate descriptions of electron correlation in the calculation of defect properties of semiconductors.

  3. Gallium nitride microcavities formed by photoenhanced wet oxidation

    SciTech Connect

    Peng, L.-H.; Lu, C.-Y.; Wu, W.-H.; Wang, S.-L.

    2005-10-17

    We report the formation of gallium nitride (GaN) microcavities by manipulating a photoenhanced oxidation rate difference between the polar and nonpolar crystallographic planes of GaN. When immersed in a buffered acetic (CH{sub 3}COOH) electrolyte of pH{approx}6.2 at room temperature, it is shown that the photo-oxidation can proceed at a rate that is one order of magnitude slower on the nonpolar plane of {l_brace}1100{r_brace}{sub GaN} than on the polar plane of {l_brace}0001{r_brace}{sub GaN} due to the reduced surface field action. Gallium nitride microcavities bounded by optically smooth {l_brace}1100{r_brace} and {l_brace}1103{r_brace} facets can thus be preferentially formed on the c-plane sapphire substrate after dissolving the oxide layer. The optical properties of these GaN hexagonal cavities reveal characteristic peaks of whispering gallery modes in resonance with the GaN band edge emission spectrum. A typical cavity Q factor of 10{sup 3} is observed in these GaN microcavities due to a reduced optical scattering loss in the wet chemical reaction process.

  4. Bidirectional reflectance of zinc oxide

    NASA Technical Reports Server (NTRS)

    Scott, R.

    1973-01-01

    This investigation was undertaken to determine original and useful information about the bidirection reflectance of zinc oxide. The bidirectional reflectance will be studied for the spectra between .25-2.5 microns and the hemisphere above the specimen. The following factors will be considered: (1) surface conditions; (2) specimen preparation; (3) specimen substrate, (4) polarization; (5) depolarization; (6) wavelength; and (7) angles of incident and reflection. The bidirectional reflectance will be checked by experimentally determined angular hemispherical measurements or hemispherical measurements will be used to obtain absolute bidirectional reflectance.

  5. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of 〈111〉-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  6. Directed spatial organization of zinc oxide nanostructures

    DOEpatents

    Hsu, Julia; Liu, Jun

    2009-02-17

    A method for controllably forming zinc oxide nanostructures on a surface via an organic template, which is formed using a stamp prepared from pre-defined relief structures, inking the stamp with a solution comprising self-assembled monolayer (SAM) molecules, contacting the stamp to the surface, such as Ag sputtered on Si, and immersing the surface with the patterned SAM molecules with a zinc-containing solution with pH control to form zinc oxide nanostructures on the bare Ag surface.

  7. Transformation of zinc hydroxide chloride monohydrate to crystalline zinc oxide.

    PubMed

    Moezzi, Amir; Cortie, Michael; McDonagh, Andrew

    2016-04-25

    Thermal decomposition of layered zinc hydroxide double salts provides an interesting alternative synthesis for particles of zinc oxide. Here, we examine the sequence of changes occurring as zinc hydroxide chloride monohydrate (Zn5(OH)8Cl2·H2O) is converted to crystalline ZnO by thermal decomposition. The specific surface area of the resultant ZnO measured by BET was 1.3 m(2) g(-1). A complicating and important factor in this process is that the thermal decomposition of zinc hydroxide chloride is also accompanied by the formation of volatile zinc-containing species under certain conditions. We show that this volatile compound is anhydrous ZnCl2 and its formation is moisture dependent. Therefore, control of atmospheric moisture is an important consideration that affects the overall efficiency of ZnO production by this process. PMID:27030646

  8. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-01

    Gallium oxide and more particularly β-Ga2O3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  9. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

    SciTech Connect

    Podhorodecki, A.; Banski, M.; Misiewicz, J.; Lecerf, C.; Marie, P.; Cardin, J.; Portier, X.

    2010-09-15

    Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

  10. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

    PubMed Central

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

  11. Solution Grown Antimony Doped Zinc Oxide Films

    NASA Astrophysics Data System (ADS)

    Riley, Conor T.

    Zinc oxide is an extensively studied semiconducting material due to its versatile properties applicable to many technologies such as electronics, optoelectronics, sensing and renewable energy. Although zinc oxide films have been created for device fabrication, the methods used to synthesize them are expensive and unrealistic for affordable commercial devices. In addition, zinc oxide is intrinsically n-type making the realization of stable p-type materials a great challenge for light emitting diodes, solar cells and UV lasing. In this thesis zinc oxide films are created using low cost solution methods. To accomplish this, a previously unreported surfactant, tert-butanol, is used. Several controlled experiments vary the concentration of tert-butanol, zinc and oxygen sources to demonstrate the ability of tert-butanol to create low cost films. Further, small amounts of antimony glycolate are added to the reaction solution, to create antimony doped zinc oxide films on sapphire and silicon substrates. Although hall measurements indicate that the films are n-type, a discussion of antimony activation provides a feasible path for the realization of low cost, p-type zinc oxide films.

  12. Formation of self-organized nanoporous anodic oxide from metallic gallium.

    PubMed

    Pandey, Bipin; Thapa, Prem S; Higgins, Daniel A; Ito, Takashi

    2012-09-25

    This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide monoliths within confined spaces like the inside of a microchannel. Here, solid gallium films prepared on planar substrates were employed to investigate the effects of anodization voltage (1, 5, 10, 15 V) and H(2)SO(4) concentration (1, 2, 4, 6 M) on anodic oxide morphology. Self-organized nanopores aligned perpendicular to the film surface were obtained upon anodization of gallium films in ice-cooled 4 and 6 M aqueous H(2)SO(4) at 10 and 15 V. Nanopore formation could be recognized by an increase in anodic current after a current decrease reflecting barrier oxide formation. The average pore diameter was in the range of 18-40 nm with a narrow diameter distribution (relative standard deviation ca. 10-20%), and was larger at lower H(2)SO(4) concentration and higher applied voltage. The maximum thickness of nanoporous anodic oxide was ca. 2 μm. In addition, anodic formation of self-organized nanopores was demonstrated for a solid gallium monolith incorporated at the end of a glass capillary. Nanoporous anodic oxide monoliths formed from a fusible metal will lead to future development of unique devices for chemical sensing and catalysis.

  13. Morphology, mechanical stability, and protective properties of ultrathin gallium oxide coatings.

    PubMed

    Lawrenz, Frank; Lange, Philipp; Severin, Nikolai; Rabe, Jürgen P; Helm, Christiane A; Block, Stephan

    2015-06-01

    Ultrathin gallium oxide layers with a thickness of 2.8 ± 0.2 nm were transferred from the surface of liquid gallium onto solid substrates, including conjugated polymer poly(3-hexylthiophene) (P3HT). The gallium oxide exhibits high mechanical stability, withstanding normal pressures of up to 1 GPa in contact mode scanning force microscopy imaging. Moreover, it lowers the rate of photodegradation of P3HT by 4 orders of magnitude, as compared to uncovered P3HT. This allows us to estimate the upper limits for oxygen and water vapor transmission rates of 0.08 cm(3) m(-2) day(-1) and 0.06 mg m(-2) day(-1), respectively. Hence, similar to other highly functional coatings such as graphene, ultrathin gallium oxide layers can be regarded as promising candidates for protective layers in flexible organic (opto-)electronics and photovoltaics because they offer permeation barrier functionalities in conjunction with high optical transparency.

  14. Comparative toxicity of a zinc salt, zinc powder and zinc oxide to Eisenia fetida, Enchytraeus albidus and Folsomia candida.

    PubMed

    Lock, Koen; Janssen, Colin R

    2003-12-01

    The pore water zinc concentration and the calcium chloride extracted zinc fraction are higher in the soils spiked with a zinc salt (ZnCl2) compared to soils spiked with zinc oxide or zinc powder. Based on total zinc concentrations in the soil, the acute toxicity of zinc salt to the compost worm Eisenia fetida, the potworm Enchytraeus albidus and the springtail Folsomia candida was lower compared to zinc oxide and zinc powder. However, when expressed on the basis of pore water concentrations or calcium chloride extracted fractions, acute toxicity was higher for zinc salt, which indicated that dermal uptake via the pore water is not the only route of uptake. Chronic toxicity of zinc salt, zinc oxide and zinc powder was similar when based on total concentrations in the soil which again indicates that the pore water route of uptake is not the only route of exposure but that oral uptake is also important.

  15. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    SciTech Connect

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A.

    2012-09-15

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  16. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  17. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  18. Properties of zinc oxide at low and moderate temperatures

    NASA Astrophysics Data System (ADS)

    Lashkarev, G. V.; Karpyna, V. A.; Lazorenko, V. I.; Ievtushenko, A. I.; Shtepliuk, I. I.; Khranovskyy, V. D.

    2011-03-01

    The properties of zinc oxide are examined as an analog of gallium nitride over a wide range of temperatures and possible applications. Its economic and environmental advantages are noted, as well as its radiation hardness, compared to group III nitrides. Methods for growing films and nanostructures with high crystal perfection are proposed. In particular, a magnetron technique for layer-by-layer growth of films is implemented which makes it possible to obtain high structural perfection and substantial thicknesses unattainable by several other methods. The feasibility of producing monochromatic UV radiation from films excited by short-wavelength radiation and electrons is demonstrated; this means that they may be useable as short-wavelength radiation sources. Efficient field emission by ZnO nanostructures and films is demonstrated and opens up the prospect of their use in vacuum microelectronics equipment. Nitrogen-doped ZnO films, in particular, have been used to fabricate a phototransistor with a sensitivity two orders of magnitude higher than conventional detectors. The physical basis for creating LEDs for different colors based on ZnO films and solid solutions with CdO is discussed. The importance of studying the physics and technology of zinc oxide-based devices is emphasized.

  19. Epitaxial gallium oxide on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Pechnikov, A. I.; Feoktistov, N. A.

    2016-09-01

    Well-textured gallium oxide β-Ga2O3 layers with a thickness of 1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer 100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (overline 2 01) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

  20. 1-Dimensional Zinc Oxide Nanomaterial Growth and Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Choi, Hyung Woo

    Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.

  1. Zinc oxide interdigitated electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Sin L., L.; Arshad, M. K. Md.; Fathil, M. F. M.; Adzhri, R.; M. Nuzaihan M., N.; Ruslinda, A. R.; Gopinath, Subash C. B.; Hashim, U.

    2016-07-01

    In biosensors, zinc oxide (ZnO) thin film plays a crucial role in term of stability, sensitivity, biocompatibility and low cost. Interdigitated electrode (IDE) design is one of the device architecture in biosensor for label free, stability and sensitivity. In this paper, we discuss the fabrication of zinc oxide deposited on the IDE as a transducer for sensing of biomolecule. The formation of APTES had increase the performance of the surface functionalization..Furthermore we extend the discuss on the surface functionalization process which is utilized for probe attachment onto the surface of biosensor through surface immobilization process, thus enables the sensing of biomolecules for biosensor application.

  2. Mesoporous bioactive scaffolds prepared with cerium-, gallium- and zinc-containing glasses.

    PubMed

    Shruti, Shruti; Salinas, Antonio J; Lusvardi, Gigliola; Malavasi, Gianluca; Menabue, Ledi; Vallet-Regi, M

    2013-01-01

    Mesoporous bioactive glass scaffolds (MBG_Scs), based on 80% SiO(2)-15% CaO-5% P(2)O(5) (in mol.%) mesoporous sol-gel glasses substituted with Ce(2)O(3), Ga(2)O(3) (both 0.2% or 1.0%) and ZnO (0.4% or 2.0%), were synthesized by combination of evaporation-induced self-assembly and rapid prototyping techniques. Cerium, gallium and zinc trace elements were selected because of their inherent beneficial biological properties. Fabricated scaffolds were characterized and compared with unsubstituted scaffold (B_Sc). All of them contained well interconnected ultralarge pores (pores >400 μm) ideal for vascular ingrowth and proliferation of cells. Macropores of size 100-400 μm were present inside the scaffolds. In addition, low-angle X-ray diffraction showed that B_Sc and scaffolds with substituent contents up to 0.4% exhibited ordered mesoporosity useful for hosting molecules with biological activity. The textural properties of B_Sc were a surface area of 398 m(2) g(-1), a pore diameter of 4.3 nm and a pore volume of 0.43 cm(3) g(-1). A slight decrease in surface area and pore volume was observed upon substitution with no distinct effect on pore diameter. In addition, all the MBG_Scs except 2.0% ZnO_Sc showed quite quick in vitro bioactive response. Hence, the present study is a positive addition to ongoing research into preparing bone tissue engineering scaffolds from bioceramics containing elements of therapeutic significance.

  3. 21 CFR 582.5991 - Zinc oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Zinc oxide. 582.5991 Section 582.5991 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS, FEEDS, AND RELATED PRODUCTS SUBSTANCES GENERALLY RECOGNIZED AS SAFE Nutrients and/or Dietary...

  4. Photoemission studies of wurtzite zinc oxide.

    NASA Technical Reports Server (NTRS)

    Powell, R. A.; Spicer, W. E.; Mcmenamin, J. C.

    1972-01-01

    The electronic structure of wurtzite zinc oxide, investigated over the widest possible photon energy range by means of photoemission techniques, is described. Of particular interest among the results of the photoemission study are the location of the Zn 3rd core states, the width of the upper valence bands, and structure in the conduction-band and valence-band density of states.

  5. Aluminum doped zinc oxide for organic photovoltaics

    SciTech Connect

    Murdoch, G. B.; Hinds, S.; Sargent, E. H.; Tsang, S. W.; Mordoukhovski, L.; Lu, Z. H.

    2009-05-25

    Aluminum doped zinc oxide (AZO) was grown via magnetron sputtering as a low-cost alternative to indium tin oxide (ITO) for organic photovoltaics (OPVs). Postdeposition ozone treatment resulted in devices with lower series resistance, increased open-circuit voltage, and power conversion efficiency double that of devices fabricated on untreated AZO. Furthermore, cells fabricated using ozone treated AZO and standard ITO displayed comparable performance.

  6. Zinc in +III oxidation state

    NASA Astrophysics Data System (ADS)

    Samanta, Devleena; Jena, Puru

    2012-02-01

    The possibility of Group 12 elements, such as Zn, Cd, and Hg existing in an oxidation state of +III or higher has fascinated chemists for decades. Significant efforts have been made in the past to achieve higher oxidation states for the heavier congener mercury (since the 3^rd ionization potential of the elements decrease as we go down the periodic table). It took nearly 20 years before experiment could confirm the theoretical prediction that Hg indeed can exist in an oxidation state of +IV. While this unusual property of Hg is attributed to the relativistic effects, Zn being much lighter than Hg has not been expected to have an oxidation state higher than +II. Using density functional theory we show that an oxidation state of +III for Zn can be realized by choosing specific ligands with large electron affinities i.e. superhalogens. We demonstrate this by a systematic study of the interaction of Zn with F, BO2, and AuF6 ligands whose electron affinities are progressively higher, namely, 3.4 eV, 4.4 eV, and 8.4 eV, respectively. Discovery of higher oxidation states of elements can help in the formulation of new reactions and hence in the development of new chemistry.

  7. A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

    NASA Technical Reports Server (NTRS)

    Kuhlman, G. J.

    1979-01-01

    The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

  8. Correlation of Zinc with Oxidative Stress Biomarkers

    PubMed Central

    Morales-Suárez-Varela, María; Llopis-González, Agustín; González-Albert, Verónica; López-Izquierdo, Raúl; González-Manzano, Isabel; Cháves, Javier; Huerta-Biosca, Vicente; Martin-Escudero, Juan C.

    2015-01-01

    Hypertension and smoking are related with oxidative stress (OS), which in turn reports on cellular aging. Zinc is an essential element involved in an individual’s physiology. The aim of this study was to evaluate the relation of zinc levels in serum and urine with OS and cellular aging and its effect on the development of hypertension. In a Spanish sample with 1500 individuals, subjects aged 20–59 years were selected, whose zinc intake levels fell within the recommended limits. These individuals were classified according to their smoking habits and hypertensive condition. A positive correlation was found (Pearson’s C = 0.639; p = 0.01) between Zn serum/urine quotient and oxidized glutathione levels (GSSG). Finally, risk of hypertension significantly increased when the GSSG levels exceeded the 75 percentile; OR = 2.80 (95%CI = 1.09–7.18) and AOR = 3.06 (95%CI = 0.96–9.71). Low zinc levels in serum were related with OS and cellular aging and were, in turn, to be a risk factor for hypertension.  PMID:25774936

  9. Formation of zinc oxide films using submicron zinc particle dispersions

    SciTech Connect

    Rajachidambaram, Meena Suhanya; Varga, Tamas; Kovarik, Libor; Sanghavi, Rahul P.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Han, Seungyeol; Chang, Chih-hung; Herman, Gregory S.

    2012-07-27

    The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 °C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 °C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

  10. Network array of zinc oxide whiskers

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Sun, X. W.; Chen, B. J.; Dong, Z. L.; Yu, M. B.; Zhang, X. H.; Chua, S. J.

    2005-01-01

    A zinc oxide (ZnO) whisker network array with sixfold symmetry was fabricated on ZnO-buffered (0001) sapphire substrate by the vapour-phase transport method using a mixture of zinc oxide and graphite powders as source materials and patterned gold as catalyst. From the ZnO buffer layer, hexagonal ZnO nanorods with identical in-plane structure grew epitaxially along the [0001] orientation to form vertical stems. The branches grew horizontally from six side-surfaces of the vertical stem along [01\\bar {1}0] and other equivalent directions. Most whiskers were confined along the six preferential orientations and interconnected with each other to form a regular network structure. The growth mechanism is discussed.

  11. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect

    Kerr, A. J.; Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C.; Gu, S.; Wu, J.; Asbeck, P. M.; Madisetti, S.; Oktyabrsky, S.

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  12. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.

    PubMed

    Kerr, A J; Chagarov, E; Gu, S; Kaufman-Osborn, T; Madisetti, S; Wu, J; Asbeck, P M; Oktyabrsky, S; Kummel, A C

    2014-09-14

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al2O3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

  13. Process for preparing zinc oxide-based sorbents

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2011-06-07

    The disclosure relates to zinc oxide-based sorbents, and processes for preparing and using them. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  14. The effect of sub-oxide phases on the transparency of tin-doped gallium oxide

    DOE PAGESBeta

    Lim, K.; Schelhas, L. T.; Siah, S. C.; Brandt, R. E.; Zakutayev, A.; Lany, S.; Gorman, B.; Sun, C. J.; Ginley, D.; Buonassisi, T.; et al

    2016-10-07

    There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Gamore » sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. Furthermore, these observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide phases.« less

  15. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  16. Copper, silver, gold and zinc, cadmium, mercury oxides and hydroxides

    SciTech Connect

    Dirkse, T.P.

    1986-01-01

    This book provides a compilation of solubility data published up to 1984, including evaluations of the data. Data are presented on the following: copper (I) oxide; copper (II) oxide and hydroxide; silver (I) oxide; silver (II) oxide; gold (III) hydroxide; zinc oxide and hydroxide; cadmium oxide and hydroxide; and mercury (II) oxide.

  17. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Anikara, R.

    1972-01-01

    The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

  18. Recovery of gallium from aluminum industry residues

    SciTech Connect

    Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

    2000-01-01

    A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

  19. Characterization of Amorphous Zinc Tin Oxide Semiconductors

    SciTech Connect

    Rajachidambaram, Jaana Saranya; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Varga, Tamas; Flynn, Brendan T.; Thevuthasan, Suntharampillai; Herman, Gregory S.

    2012-06-12

    Amorphous zinc tin oxide (ZTO) was investigated to determine the effect of deposition and post annealing conditions on film structure, composition, surface contamination, and thin film transistor (TFT) device performance. X-ray diffraction results indicated that the ZTO films remain amorphous even after annealing to 600 °C. We found that the bulk Zn:Sn ratio of the sputter deposited films were slightly tin rich compared to the composition of the ceramic sputter target, and there was a significant depletion of zinc at the surface. X-ray photoelectron spectroscopy also indicated that residual surface contamination depended strongly on the sample post-annealing conditions where water, carbonate and hydroxyl species were absorbed to the surface. Electrical characterization of ZTO films, using TFT test structures, indicated that mobilities as high as 17 cm2/Vs could be obtained for depletion mode devices.

  20. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions

    NASA Astrophysics Data System (ADS)

    Burke, Benjamin P.; Baghdadi, Neazar; Kownacka, Alicja E.; Nigam, Shubhanchi; Clemente, Gonçalo S.; Al-Yassiry, Mustafa M.; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J.

    2015-09-01

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging.The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no

  1. Recent developments in zinc oxide target chemistry

    SciTech Connect

    Heaton, R.C.; Taylor, W.A.; Phillips, D.R.; Jamriska, D.J. Sr.; Garcia, J.B.

    1994-04-01

    Zinc oxide targets irradiated with high energy protons at the Los Alamos Meson Physics Facility (LAMPF) contain a number of radioactive spallation products in quantities large enough to warrant recovery. This paper describes methods for recovering {sup 7}Be, {sup 46}Sc, and {sup 48}V from such targets and offers suggestions on possible ways to recover additional isotopes. The proposed methods are based on traditional precipitation and ion exchange techniques, are readily adaptable to hot cell use, and produce no hazardous waste components. The products are obtained in moderate to high yields and have excellent radiopurity.

  2. Varistor action in zinc oxide suspension

    NASA Astrophysics Data System (ADS)

    Negita, K.; Yamaguchi, T.; Tsuchie, T.; Shigematsu, N.

    2003-04-01

    In a suspension composed of zinc oxide (ZnO) particles and silicone oil, it is found that the current density dramatically increases above a specific electric field (break down field Eb). In ac measurement, the nonlinear coefficient (α), which characterizes the relationship between current density J and the electric field E as J∝Eα, changes from ˜1 to ˜30 when increasing the electric field through Eb. On the basis of the α value, temperature dependence of Eb, etc., the mechanism of the fluid varistor is briefly discussed.

  3. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity.

  4. Investigating the effect of gallium curcumin and gallium diacetylcurcumin complexes on the structure, function and oxidative stability of the peroxidase enzyme and their anticancer and antibacterial activities.

    PubMed

    Jahangoshaei, Parisa; Hassani, Leila; Mohammadi, Fakhrossadat; Hamidi, Akram; Mohammadi, Khosro

    2015-10-01

    Curcumin has a wide spectrum of biological and pharmacological activities including anti-inflammatory, antioxidant, antiproliferative, antimicrobial and anticancer activities. Complexation of curcumin with metals has gained attention in recent years for improvement of its stability. In this study, the effect of gallium curcumin and gallium diacetylcurcumin on the structure, function and oxidative stability of horseradish peroxidase (HRP) enzyme were evaluated by spectroscopic techniques. In addition to the enzymatic investigation, the cytotoxic effect of the complexes was assessed on bladder, MCF-7 breast cancer and LNCaP prostate carcinoma cell lines by MTT assay. Furthermore, antibacterial activity of the complexes against S. aureus and E. coli was explored by dilution test method. The results showed that the complexes improve activity of HRP and also increase its tolerance against the oxidative condition. After addition of the complexes, affinity of HRP for hydrogen peroxide substrate decreases, while the affinity increases for phenol substrate. Circular dichroism, intrinsic and synchronous fluorescence spectra showed that the enzyme structure around the catalytic heme group becomes less compact and also the distance between the heme group and tryptophan residues increases due to binding of the complexes to HRP. On the whole, it can be concluded that the change in the enzyme structure upon binding to the gallium curcumin and gallium diacetylcurcumin complexes results in an increase in the antioxidant efficiency and activity of the peroxidise enzyme. The result of anticancer and antibacterial activities suggested that the complexes exhibit the potential for cancer treatment, but they have no significant antibacterial activity. PMID:26369539

  5. Zinc Absorption by Young Adults from Supplemental Zinc Citrate Is Comparable with That from Zinc Gluconate and Higher than from Zinc Oxide123

    PubMed Central

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnić, Marica; Hurrell, Richard F.

    2014-01-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with 67Zn and 70Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6–71.0) and was not different from that from zinc gluconate with 60.9% (50.6–71.7). Absorption from zinc oxide at 49.9% (40.9–57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627. PMID:24259556

  6. Zinc absorption by young adults from supplemental zinc citrate is comparable with that from zinc gluconate and higher than from zinc oxide.

    PubMed

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnic, Marica; Hurrell, Richard F

    2014-02-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with (67)Zn and (70)Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6-71.0) and was not different from that from zinc gluconate with 60.9% (50.6-71.7). Absorption from zinc oxide at 49.9% (40.9-57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627.

  7. Zinc absorption by young adults from supplemental zinc citrate is comparable with that from zinc gluconate and higher than from zinc oxide.

    PubMed

    Wegmüller, Rita; Tay, Fabian; Zeder, Christophe; Brnic, Marica; Hurrell, Richard F

    2014-02-01

    The water-soluble zinc salts gluconate, sulfate, and acetate are commonly used as supplements in tablet or syrup form to prevent zinc deficiency and to treat diarrhea in children in combination with oral rehydration. Zinc citrate is an alternative compound with high zinc content, slightly soluble in water, which has better sensory properties in syrups but no absorption data in humans. We used the double-isotope tracer method with (67)Zn and (70)Zn to measure zinc absorption from zinc citrate given as supplements containing 10 mg of zinc to 15 healthy adults without food and compared absorption with that from zinc gluconate and zinc oxide (insoluble in water) using a randomized, double-masked, 3-way crossover design. Median (IQR) fractional absorption of zinc from zinc citrate was 61.3% (56.6-71.0) and was not different from that from zinc gluconate with 60.9% (50.6-71.7). Absorption from zinc oxide at 49.9% (40.9-57.7) was significantly lower than from both other supplements (P < 0.01). Three participants had little or no absorption from zinc oxide. We conclude that zinc citrate, given as a supplement without food, is as well absorbed by healthy adults as zinc gluconate and may thus be a useful alternative for preventing zinc deficiency and treating diarrhea. The more insoluble zinc oxide is less well absorbed when given as a supplement without food and may be minimally absorbed by some individuals. This trial was registered at clinicaltrials.gov as NCT01576627. PMID:24259556

  8. Zinc oxide doped graphene oxide films for gas sensing applications

    NASA Astrophysics Data System (ADS)

    Chetna, Kumar, Shani; Garg, A.; Chowdhuri, A.; Dhingra, V.; Chaudhary, S.; Kapoor, A.

    2016-05-01

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer's method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  9. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts.

    PubMed

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  10. Photocatalytic oxidation of methane over silver decorated zinc oxide nanocatalysts

    PubMed Central

    Chen, Xuxing; Li, Yunpeng; Pan, Xiaoyang; Cortie, David; Huang, Xintang; Yi, Zhiguo

    2016-01-01

    The search for active catalysts that efficiently oxidize methane under ambient conditions remains a challenging task for both C1 utilization and atmospheric cleansing. Here, we show that when the particle size of zinc oxide is reduced down to the nanoscale, it exhibits high activity for methane oxidation under simulated sunlight illumination, and nano silver decoration further enhances the photo-activity via the surface plasmon resonance. The high quantum yield of 8% at wavelengths <400 nm and over 0.1% at wavelengths ∼470 nm achieved on the silver decorated zinc oxide nanostructures shows great promise for atmospheric methane oxidation. Moreover, the nano-particulate composites can efficiently photo-oxidize other small molecular hydrocarbons such as ethane, propane and ethylene, and in particular, can dehydrogenize methane to generate ethane, ethylene and so on. On the basis of the experimental results, a two-step photocatalytic reaction process is suggested to account for the methane photo-oxidation. PMID:27435112

  11. Initial oxidation of gallium arsenide (001)-β2(2 x 4) surface using density functional theory.

    PubMed

    Kim, Dae-Hee; Kim, Dae-Hyun; Kim, Yeong-Cheol

    2014-10-01

    The initial oxidation of a gallium arsenide (001)-β2(2 x 4) surface with an oxygen molecule was investigated using density functional theory. The oxygen molecule was adsorbed on the surface without any energy barrier. The dissociation of the oxygen molecule on the first arsenic layer had two dissociation paths; the inter-dimer and intra-dimer. The inter-dimer dissociation was the dominant dissociation path based on the energy barriers. The two dissociated oxygen atoms preferred breaking the arsenic-gallium back-bond to form arsenic-oxygen-gallium bonds. Our results are in good agreement with literature of the scanning tunneling microscope study.

  12. Magnetic bistability and Overhauser shift of conduction electrons in gallium oxide

    NASA Astrophysics Data System (ADS)

    Aubay, Eric; Gourier, Didier

    1993-06-01

    We study the intrinsic magnetic bistability of conduction-electron spins in gallium oxide β-Ga2O3 by electron-paramagnetic-resonance (EPR) spectroscopy. This compound, normally an insulator, becomes an n-type semiconductor when synthesized under reducing conditions. The crystals studied in this work have a conductivity of 180-200 Ω-1 cm-1 at room temperature and 140 Ω-1 cm-1 at liquid-helium temperature. It has been previously shown [J. Phys. Chem. 96, 5513 (1992)] that the hyperfine interaction between conduction-electron spins and nuclear spins of gallium is responsible for a strong dynamic nuclear polarization when the EPR of conduction electrons is saturated (Overhauser effect). The resulting nuclear field acting on the electron spins was found to be bistable, which causes a hysteresis of the resonance line. In this work we demonstrate that hysteresis can be theoretically produced by three different control parameters: the external magnetic field B0, the microwave frequency ν, and the microwave field B1 (or the microwave power P). A model is presented for the EPR line shape under bistable dynamic nuclear polarization, which is in fair agreement with experimental results for gallium oxide. We verify in this compound the existence of hysteresis of the EPR intensity upon positive and negative variations of the incident microwave power. The effect of sample size on bistability is also investigated. It is shown that this phenomenon can disappear if the sample size is larger than the skin depth of the compound. Bistability at room temperature in gallium oxide is found to be very sensitive to this size effect. The Overhauser shift of conduction electrons is also studied as a function of temperature. This parameter gives details on the hyperfine interaction between charge carriers and magnetic nuclei despite the extreme motional narrowing of the EPR line. The results are interpreted in terms of electronic transport at low temperatures involving an impurity band

  13. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  14. Zinc Oxide Nanomaterials for Biomedical Fluorescence Detection

    PubMed Central

    Hahm, Jong-in

    2014-01-01

    One-dimensional zinc oxide nanomaterials have been recently developed into novel, extremely effective, optical signal-enhancing bioplatforms. Their usefulness has been demonstrated in various biomedical fluorescence assays. Fluorescence is extensively used in biology and medicine as a sensitive and noninvasive detection method for tracking and analyzing biological molecules. Achieving high sensitivity via improving signal-to-noise ratio is of paramount importance in fluorescence-based, trace-level detection. Recent advances in the development of optically superior one-dimensional materials have contributed to this important biomedical area of detection. This review article will discuss major research developments that have so far been made in this emerging and exciting topical field. The discussion will cover a broad range of subjects including synthesis of zinc oxide nanorods (ZnO NRs), various properties differentiating them as suitable optical biodetection platforms, their demonstrated applicability in DNA and protein detection, and the nanomaterial characteristics relevant for biomolecular fluorescence enhancement. This review will then summarize the current status of ZnO NR-based biodetection and further elaborate future utility of ZnO NR platforms for advanced biomedical assays, based on their proven advantages. Lastly, present challenges experienced in this topical area will be identified and focal subject areas for future research will be suggested as well. PMID:24730276

  15. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.

    PubMed

    Carter, Dean E; Aposhian, H Vasken; Gandolfi, A Jay

    2003-12-15

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  16. The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.

    PubMed

    Carter, Dean E; Aposhian, H Vasken; Gandolfi, A Jay

    2003-12-15

    The aim of this review is to compare the metabolism, chemistry, and biological effects to determine if either of the industrial arsenicals (arsine and gallium arsenide) act like the environmental arsenic oxides (arsenite and arsenate). The metabolism of the arsenic oxides has been extensively investigated in the past 4 years and the differences between the arsenic metabolites in the oxidation states +III versus +V and with one or two methyl groups added have shown increased importance. The arsenic oxide metabolism has been compared with arsine (oxidation state -III) and arsenide (oxidation state between 0 to -III). The different metabolites appear to have different strengths of reaction for binding arsenic (III) to thiol groups, their oxidation-reduction reactions and their forming an arsenic-carbon bond. It is unclear if the differences in parameters such as the presence or absence of methyl metabolites, the rates of AsV reduction compared to the rates of AsIII oxidation, or the competition of phosphate and arsenate for cellular uptake are large enough to change biological effects. The arsine rate of decomposition, products of metabolism, target organ of toxic action, and protein binding appeared to support an oxidized arsenic metabolite. This arsine metabolite was very different from anything made by the arsenic oxides. The gallium arsenide had a lower solubility than any other arsenic compound and it had a disproportionate intensity of lung damage to suggest that the GaAs had a site of contact interaction and that oxidation reactions were important in its toxicity. The urinary metabolites after GaAs exposure were the same as excreted by arsenic oxides but the chemical compounds responsible for the toxic effects of GaAs are different from the arsenic oxides. The review concludes that there is insufficient evidence to equate the different arsenic compounds. There are several differences in the toxicity of the arsenic compounds that will require substantial

  17. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions.

    PubMed

    Burke, Benjamin P; Baghdadi, Neazar; Kownacka, Alicja E; Nigam, Shubhanchi; Clemente, Gonçalo S; Al-Yassiry, Mustafa M; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J

    2015-09-28

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging. PMID:26292197

  18. Chelator free gallium-68 radiolabelling of silica coated iron oxide nanorods via surface interactions.

    PubMed

    Burke, Benjamin P; Baghdadi, Neazar; Kownacka, Alicja E; Nigam, Shubhanchi; Clemente, Gonçalo S; Al-Yassiry, Mustafa M; Domarkas, Juozas; Lorch, Mark; Pickles, Martin; Gibbs, Peter; Tripier, Raphaël; Cawthorne, Christopher; Archibald, Stephen J

    2015-09-28

    The commercial availability of combined magnetic resonance imaging (MRI)/positron emission tomography (PET) scanners for clinical use has increased demand for easily prepared agents which offer signal or contrast in both modalities. Herein we describe a new class of silica coated iron-oxide nanorods (NRs) coated with polyethylene glycol (PEG) and/or a tetraazamacrocyclic chelator (DO3A). Studies of the coated NRs validate their composition and confirm their properties as in vivo T2 MRI contrast agents. Radiolabelling studies with the positron emitting radioisotope gallium-68 (t1/2 = 68 min) demonstrate that, in the presence of the silica coating, the macrocyclic chelator was not required for preparation of highly stable radiometal-NR constructs. In vivo PET-CT and MR imaging studies show the expected high liver uptake of gallium-68 radiolabelled nanorods with no significant release of gallium-68 metal ions, validating our innovation to provide a novel simple method for labelling of iron oxide NRs with a radiometal in the absence of a chelating unit that can be used for high sensitivity liver imaging.

  19. Zinc Plasma Emission from Zinc Oxide Ceramics under a Microwave Electric Field

    NASA Astrophysics Data System (ADS)

    Sonobe, Taro; Mitani, Tomohiko; Hachiya, Kan; Shinohara, Naoki; Ohgaki, Hideaki

    2010-08-01

    We studied the effects of microwave irradiation on ZnO ceramics under vacuum to clarify the emission of zinc and oxygen plasmas from ZnO, while simultaneously focusing on the material's optical properties. We observed the emission of zinc and oxygen plasmas during intense absorption of microwaves as well as the deposition of zinc and zinc oxide films. Absorption coefficient and photoluminescence spectra suggest that zinc and oxygen plasmas were produced from grain surfaces of ZnO by microwave irradiation under vacuum, a phenomenon which was observed in a previous study on TiO2 [Jpn. J. Appl. Phys. 48 (2009) 116003].

  20. Zinc.

    PubMed

    Barceloux, D G

    1999-01-01

    The use of zinc in metal alloys and medicinal lotions dates back before the time of Christ. Currently, most of the commercial production of zinc involves the galvanizing of iron and the manufacture of brass. Some studies support the use of zinc gluconate lozenges to treat the common cold, but there are insufficient data at this time to recommend the routine use of these lozenges. Zinc is an essential co-factor in a variety of cellular processes including DNA synthesis, behavioral responses, reproduction, bone formation, growth, and wound healing. Zinc is a relatively common metal with an average concentration of 50 mg/kg soil and a range of 10-300 mg/kg soil. Meat, seafood, dairy products, nuts, legumes, and whole grains contain relatively high concentrations of zinc. The mobility of zinc in anaerobic environments is poor and therefore severe zinc contamination occurs primarily near points sources of zinc release. The recommended daily allowance for adults is 15 mg zinc. The ingestion of 1-2 g zinc sulfate produces emesis. Zinc compounds can produce irritation and corrosion of the gastrointestinal tract, along with acute renal tubular necrosis and interstitial nephritis. Inhalation of high concentrations of zinc chloride from smoke bombs detonated in closed spaces may cause chemical pneumonitis and adult respiratory distress syndrome. In the occupational setting inhalation of fumes from zinc oxide is the most common cause of metal fume fever (fatigue, chills, fever, myalgias, cough, dyspnea, leukocytosis, thirst, metallic taste, salivation). Zinc compounds are not suspected carcinogens. Treatment of zinc toxicity is supportive. Calcium disodium ethylenediaminetetraacetate (CaNa2EDTA) is the chelator of choice based on case reports that demonstrate normalization of zinc concentrations, but there are few clinical data to confirm the efficacy of this agent. PMID:10382562

  1. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  2. Relative Penetration of Zinc Oxide and Zinc Ions into Human Skin after Application of Different Zinc Oxide Formulations.

    PubMed

    Holmes, Amy M; Song, Zhen; Moghimi, Hamid R; Roberts, Michael S

    2016-02-23

    Zinc oxide (ZnO) is frequently used in commercial sunscreen formulations to deliver their broad range of UV protection properties. Concern has been raised about the extent to which these ZnO particles (both micronized and nanoparticulate) penetrate the skin and their resultant toxicity. This work has explored the human epidermal skin penetration of zinc oxide and its labile zinc ion dissolution product that may potentially be formed after application of ZnO nanoparticles to human epidermis. Three ZnO nanoparticle formulations were used: a suspension in the oil, capric caprylic triglycerides (CCT), the base formulation commonly used in commercially available sunscreen products; an aqueous ZnO suspension at pH 6, similar to the natural skin surface pH; and an aqueous ZnO suspension at pH 9, a pH at which ZnO is stable and there is minimal pH-induced impairment of epidermal integrity. In each case, the ZnO in the formulations did not penetrate into the intact viable epidermis for any of the formulations but was associated with an enhanced increase in zinc ion fluorescence signal in both the stratum corneum and the viable epidermis. The highest labile zinc fluorescence was found for the ZnO suspension at pH 6. It is concluded that, while topically applied ZnO does not penetrate into the viable epidermis, these applications are associated with hydrolysis of ZnO on the skin surface, leading to an increase in zinc ion levels in the stratum corneum, thence in the viable epidermis and subsequently in the systemic circulation and the urine.

  3. Investigations in gallium removal

    SciTech Connect

    Philip, C.V.; Pitt, W.W.; Beard, C.A.

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  4. Electrical characterization of plasma-grown oxides on gallium arsenide

    NASA Technical Reports Server (NTRS)

    Hshieh, F. I.; Bhat, K. N.; Ghandhi, S. K.; Borrego, J. M.

    1985-01-01

    Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

  5. Antifouling properties of zinc oxide nanorod coatings.

    PubMed

    Al-Fori, Marwan; Dobretsov, Sergey; Myint, Myo Tay Zar; Dutta, Joydeep

    2014-01-01

    In laboratory experiments, the antifouling (AF) properties of zinc oxide (ZnO) nanorod coatings were investigated using the marine bacterium Acinetobacter sp. AZ4C, larvae of the bryozoan Bugula neritina and the microalga Tetraselmis sp. ZnO nanorod coatings were fabricated on microscope glass substrata by a simple hydrothermal technique using two different molar concentrations (5 and 10 mM) of zinc precursors. These coatings were tested for 5 h under artificial sunlight (1060 W m(-2) or 530 W m(-2)) and in the dark (no irradiation). In the presence of light, both the ZnO nanorod coatings significantly reduced the density of Acinetobacter sp. AZ4C and Tetraselmis sp. in comparison to the control (microscope glass substratum without a ZnO coating). High mortality and low settlement of B. neritina larvae was observed on ZnO nanorod coatings subjected to light irradiation. In darkness, neither mortality nor enhanced settlement of larvae was observed. Larvae of B. neritina were not affected by Zn(2+) ions. The AF effect of the ZnO nanorod coatings was thus attributed to the reactive oxygen species (ROS) produced by photocatalysis. It was concluded that ZnO nanorod coatings effectively prevented marine micro and macrofouling in static conditions.

  6. Antifouling properties of zinc oxide nanorod coatings.

    PubMed

    Al-Fori, Marwan; Dobretsov, Sergey; Myint, Myo Tay Zar; Dutta, Joydeep

    2014-01-01

    In laboratory experiments, the antifouling (AF) properties of zinc oxide (ZnO) nanorod coatings were investigated using the marine bacterium Acinetobacter sp. AZ4C, larvae of the bryozoan Bugula neritina and the microalga Tetraselmis sp. ZnO nanorod coatings were fabricated on microscope glass substrata by a simple hydrothermal technique using two different molar concentrations (5 and 10 mM) of zinc precursors. These coatings were tested for 5 h under artificial sunlight (1060 W m(-2) or 530 W m(-2)) and in the dark (no irradiation). In the presence of light, both the ZnO nanorod coatings significantly reduced the density of Acinetobacter sp. AZ4C and Tetraselmis sp. in comparison to the control (microscope glass substratum without a ZnO coating). High mortality and low settlement of B. neritina larvae was observed on ZnO nanorod coatings subjected to light irradiation. In darkness, neither mortality nor enhanced settlement of larvae was observed. Larvae of B. neritina were not affected by Zn(2+) ions. The AF effect of the ZnO nanorod coatings was thus attributed to the reactive oxygen species (ROS) produced by photocatalysis. It was concluded that ZnO nanorod coatings effectively prevented marine micro and macrofouling in static conditions. PMID:25115521

  7. Photocatalytic paper using zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Baruah, Sunandan; Jaisai, Mayuree; Imani, Reza; Nazhad, Mousa M.; Dutta, Joydeep

    2010-10-01

    Zinc oxide (ZnO) nanorods were grown on a paper support prepared from soft wood pulp. The photocatalytic activity of a sheet of paper with ZnO nanorods embedded in its porous matrix has been studied. ZnO nanorods were firmly attached to cellulose fibers and the photocatalytic paper samples were reused several times with nominal decrease in efficiency. Photodegradation of up to 93% was observed for methylene blue in the presence of paper filled with ZnO nanorods upon irradiation with visible light at 963 Wm-2 for 120 min. Under similar conditions, photodegradation of approximately 35% was observed for methyl orange. Antibacterial tests revealed that the photocatalytic paper inhibits the growth of Escherichia coli under room lighting conditions.

  8. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  9. Production of nano zinc, zinc sulphide and nanocomplex of magnetite zinc oxide by Brevundimonas diminuta and Pseudomonas stutzeri.

    PubMed

    Mirhendi, Mansoureh; Emtiazi, Giti; Roghanian, Rasoul

    2013-12-01

    ZnO (Zincite) nanoparticle has many industrial applications and is mostly produced by chemical reactions, usually prepared by decomposition of zinc acetate or hot-injection and heating-up method. Synthesis of semi-conductor nanoparticles such as ZnS (Sphalerite) by ultrasonic was previously reported. In this work, high-zinc tolerant bacteria were isolated and used for nano zinc production. Among all isolated microorganisms, a gram negative bacterium which was identified as Brevundimonas diminuta could construct nano magnetite zinc oxide on bacterial surface with 22 nm in size and nano zinc with 48.29 nm in size. A piece of zinc metal was immersed in medium containing of pure culture of B. diminuta. Subsequently, a yellow-white biofilm was formed which was collected from the surface of zinc. It was dried at room temperature. The isolated biofilm was analysed by X-ray diffractometer. Interestingly, the yield of these particles was higher in the light, with pH 7 at 23°C. To the best of the authors knowledge, this is the first report about the production of nano zinc metal and nano zinc oxide that are stable and have anti-bacterial activities with magnetite property. Also ZnS (sized 12 nm) produced by Pseudomonas stutzeri, was studied by photoluminescence and fluorescent microscope.

  10. Zinc

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc was recognized as an essential trace metal for humans during the studies of Iranian adolescent dwarfs in the early 1960s. Zinc metal existing as Zn2+ is a strong electron acceptor in biological systems without risks of oxidant damage to cells. Zn2+ functions in the structure of proteins and is ...

  11. Microwave Synthesis of Zinc Hydroxy Sulfate Nanoplates and Zinc Oxide Nanorods in the Classroom

    ERIC Educational Resources Information Center

    Dziedzic, Rafal M.; Gillian-Daniel, Anne Lynn; Peterson, Greta M.; Martínez-Herna´ndez, Kermin J.

    2014-01-01

    In this hands-on, inquiry-based lab, high school and undergraduate students learn about nanotechnology by synthesizing their own nanoparticles in a single class period. This simple synthesis of zinc oxide nanorods and zinc hydroxy sulfate nanoplates can be done in 15 min using a household microwave oven. Reagent concentration, reaction…

  12. Influence of phytase, EDTA, and polyphenols on zinc absorption in adults from porridges fortified with zinc sulfate or zinc oxide.

    PubMed

    Brnić, Marica; Wegmüller, Rita; Zeder, Christophe; Senti, Gabriela; Hurrell, Richard F

    2014-09-01

    Fortification of cereal staples with zinc is recommended to combat zinc deficiency. To optimize zinc absorption, strategies are needed to overcome the inhibitory effect of phytic acid (PA) and perhaps polyphenols. Five zinc absorption studies were conducted in young adults consuming maize or sorghum porridges fortified with 2 mg zinc as zinc sulfate (ZnSO4) or zinc oxide (ZnO) and containing combinations of PA or polyphenols as potential inhibitors and EDTA and phytase as potential enhancers. Fractional absorption of zinc (FAZ) was measured by using the double isotopic tracer ratio method. Adding phytase to the maize porridge immediately before consumption or using phytase for dephytinization during meal preparation both increased FAZ by >80% (both P < 0.001). Adding Na2EDTA at an EDTA:zinc molar ratio of 1:1 increased FAZ from maize porridge fortified with ZnSO4 by 30% (P = 0.01) but had no influence at higher EDTA ratios or on absorption from ZnO. FAZ was slightly higher from ZnSO4 than from ZnO (P = 0.02). Sorghum polyphenols had no effect on FAZ from dephytinized sorghum porridges but decreased FAZ by 20% from PA-rich sorghum porridges (P < 0.02). The combined inhibitory effect of polyphenols and PA was overcome by EDTA. In conclusion, ZnSO4 was better absorbed than ZnO, phytase used to degrade PA during digestion or during food preparation substantially increased zinc absorption from zinc-fortified cereals, EDTA at a 1:1 molar ratio modestly enhanced zinc absorption from ZnSO4-fortified cereals but not ZnO-fortified cereals, and sorghum polyphenols inhibited zinc absorption in the presence, but not absence, of PA. This trial was registered at clinicaltrials.gov as NCT01210794.

  13. Toxicokinetics of zinc oxide nanoparticles in rats

    NASA Astrophysics Data System (ADS)

    Chung, H. E.; Yu, J.; Baek, M.; Lee, J. A.; Kim, M. S.; Kim, S. H.; Maeng, E. H.; Lee, J. K.; Jeong, J.; Choi, S. J.

    2013-04-01

    Zinc oxide (ZnO) nanoparticle have been extensively applied to diverse industrial fields because they possess UV light absorption, catalytic, semi-conducting, and magnetic characteristics as well as antimicrobial property. However, up to date, toxicological effects of ZnO nanoparticles in animal models have not been completely determined. Moreover, little information is available about kinetic behaviors of ZnO nanoparticles in vivo, which will be crucial to predict their potential chronic toxicity after long-term exposure. The aim of this study was, therefore, to evaluate the pharmacokinetics and toxicokinetics of ZnO nanoparticles after single-dose and repeated dose 90-day oral administration in male and female rats, respectively. The blood samples were collected following administration of three different doses (125, 250, and 500 mg/kg) and ZnO concentration was assessed by measuring zinc level with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The result showed that the plasma ZnO concentration significantly increased in a dose-dependent manner, but decreased within 24 h after single-dose oral administration up to 500 mg/kg, without any significant difference between gender. However, when repeated dose 90-day oral toxicity study was performed, the elevated plasma concentrations did not return to normal control levels in all the cases, indicating their toxicity potential. These findings suggest that repeated oral exposure to ZnO nanoparticles up to the dose of 125 mg/kg could accumulate in the systemic circulation, thereby implying that the NOAEL values could be less than 125 mg/kg via oral intake.

  14. Bioavailability of zinc in Wistar rats fed with rice fortified with zinc oxide.

    PubMed

    Della Lucia, Ceres Mattos; Santos, Laura Luiza Menezes; Rodrigues, Kellen Cristina da Cruz; Rodrigues, Vivian Cristina da Cruz; Martino, Hércia Stampini Duarte; Sant'Ana, Helena Maria Pinheiro

    2014-06-01

    The study of zinc bioavailability in foods is important because this mineral intake does not meet the recommended doses for some population groups. Also, the presence of dietary factors that reduce zinc absorption contributes to its deficiency. Rice fortified with micronutrients (Ultra Rice®) is a viable alternative for fortification since this cereal is already inserted into the population habit. The aim of this study was to evaluate the bioavailability of zinc (Zn) in rice fortified with zinc oxide. During 42 days, rats were divided into four groups and fed with diets containing two different sources of Zn (test diet: UR® fortified with zinc oxide, or control diet: zinc carbonate (ZnCO3)), supplying 50% or 100%, respectively, of the recommendations of this mineral for animals. Weight gain, food intake, feed efficiency ratio, weight, thickness and length of femur; retention of zinc, calcium (Ca) and magnesium (Mg) in the femur and the concentrations of Zn in femur, plasma and erythrocytes were evaluated. Control diet showed higher weight gain, feed efficiency ratio, retention of Zn and Zn concentration in the femur (p < 0.05). However, no differences were observed (p > 0.05) for dietary intake, length and thickness of the femur, erythrocyte and plasmatic Zn between groups. Although rice fortified with zinc oxide showed a lower bioavailability compared to ZnCO3, this food can be a viable alternative to be used as a vehicle for fortification.

  15. Bioavailability of Zinc in Wistar Rats Fed with Rice Fortified with Zinc Oxide

    PubMed Central

    Della Lucia, Ceres Mattos; Santos, Laura Luiza Menezes; Rodrigues, Kellen Cristina da Cruz; Rodrigues, Vivian Cristina da Cruz; Martino, Hércia Stampini Duarte; Pinheiro Sant’Ana, Helena Maria

    2014-01-01

    The study of zinc bioavailability in foods is important because this mineral intake does not meet the recommended doses for some population groups. Also, the presence of dietary factors that reduce zinc absorption contributes to its deficiency. Rice fortified with micronutrients (Ultra Rice®) is a viable alternative for fortification since this cereal is already inserted into the population habit. The aim of this study was to evaluate the bioavailability of zinc (Zn) in rice fortified with zinc oxide. During 42 days, rats were divided into four groups and fed with diets containing two different sources of Zn (test diet: UR® fortified with zinc oxide, or control diet: zinc carbonate (ZnCO3)), supplying 50% or 100%, respectively, of the recommendations of this mineral for animals. Weight gain, food intake, feed efficiency ratio, weight, thickness and length of femur; retention of zinc, calcium (Ca) and magnesium (Mg) in the femur and the concentrations of Zn in femur, plasma and erythrocytes were evaluated. Control diet showed higher weight gain, feed efficiency ratio, retention of Zn and Zn concentration in the femur (p < 0.05). However, no differences were observed (p > 0.05) for dietary intake, length and thickness of the femur, erythrocyte and plasmatic Zn between groups. Although rice fortified with zinc oxide showed a lower bioavailability compared to ZnCO3, this food can be a viable alternative to be used as a vehicle for fortification. PMID:24932657

  16. Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

    SciTech Connect

    Zhang, Xueqiang; Lamere, Edward; Ptasinska, Sylwia; Liu, Xinyu; Furdyna, Jacek K.

    2014-05-05

    The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O{sub 2} dissociation.

  17. The kinetic of photoreactions in zinc oxide microrods

    NASA Astrophysics Data System (ADS)

    Fiedot, M.; Rac, O.; Suchorska-Woźniak, P.; Nawrot, W.; Teterycz, H.

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed.

  18. Zinc oxide nanoflowers make new blood vessels

    NASA Astrophysics Data System (ADS)

    Barui, Ayan Kumar; Veeriah, Vimal; Mukherjee, Sudip; Manna, Joydeb; Patel, Ajay Kumar; Patra, Sujata; Pal, Krishnendu; Murali, Shruthi; Rana, Rohit K.; Chatterjee, Suvro; Patra, Chitta Ranjan

    2012-11-01

    It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood vessels formation. Additionally, it helps to promote endothelial cell (EA.hy926 cells) migration in wound healing assays. Formation of reactive oxygen species (ROS), especially hydrogen peroxide (H2O2)--a redox signaling molecule, might be the plausible mechanism for nanoflower-based angiogenesis. Angiogenesis by nanoflowers may provide the basis for the future development of new alternative therapeutic treatment strategies for cardiovascular and ischemic diseases, where angiogenesis plays a significant role.It is well established that angiogenesis is the process of formation of new capillaries from pre-existing blood vessels. It is a complex process, involving both pro- and anti-angiogenic factors, and plays a significant role in physiological and pathophysiological processes such as embryonic development, atherosclerosis, post-ischemic vascularization of the myocardium, tumor growth and metastasis, rheumatoid arthritis etc. This is the first report of zinc oxide (ZnO) nanoflowers that show significant pro-angiogenic properties (formation of new capillaries from pre-existing blood vessels), observed by in vitro and in vivo angiogenesis assays. The egg yolk angiogenesis assay using ZnO nanoflowers indicates the presence of matured blood

  19. Gallium scan

    MedlinePlus

    Liver gallium scan; Bony gallium scan ... You will get a radioactive material called gallium injected into your vein. The gallium travels through the bloodstream and collects in the bones and certain organs. Your health care provider will ...

  20. Nonstoichiometric zinc oxide and indium-doped zinc oxide: Electrical conductivity and {sup 111}In-TDPAC studies

    SciTech Connect

    Wang, R.; Sleight, A.W.; Platzer, R.; Gardner, J.A.

    1996-02-15

    Indium-doped zinc oxide powders have been prepared which show room-temperature electrical conductivities as high as 30 {Omega}{sup {minus}1} cm{sup {minus}1}. The indium doping apparently occurs as Zn{sub 1-x}In{sub x}O,Zn{sub 1-y}In{sub y}O{sub 1+y/2}, or a combination of these. Optimum conductivity occurs for Zn{sub 1-x}In{sub x}O where the maximum value of x obtained was about 0.5 at%. The degrees of sample reduction were determined by iodimetric titration. Time differential perturbed angular correlation (TDPAC) spectroscopy on indium doped zinc oxide is consistent with indium substituting at normal zinc sites in the ZnO lattice. TDPAC studies on zinc oxide annealed under zinc vapors show a second environment for the {sup 111}In probe. In this case, there is an unusually high temperature dependence of the electric field gradient which may be caused by a nearby zinc interstitial. An important conclusion of this work is that zinc interstitials are not ionized and do not therefore contribute significantly to the increased conductivity of reduced zinc oxide.

  1. Acetone sensor based on zinc oxide hexagonal tubes

    SciTech Connect

    Hastir, Anita Singh, Onkar Anand, Kanika Singh, Ravi Chand

    2014-04-24

    In this work hexagonal tubes of zinc oxide have been synthesized by co-precipitation method. For structural, morphological, elemental and optical analysis synthesized powders were characterized by using x-ray diffraction, field emission scanning microscope, EDX, UV-visible and FTIR techniques. For acetone sensing thick films of zinc oxide have been deposited on alumina substrate. The fabricated sensors exhibited maximum sensing response towards acetone vapour at an optimum operating temperature of 400°C.

  2. Labyrinth patterns of zinc oxide on porous silicon substrate

    NASA Astrophysics Data System (ADS)

    Martínez, L.; Kumar, Y.; Mayorga, D.; Goswami, N.; Agarwal, V.

    2014-03-01

    The substrate treatment dependent formation of different micro-morphologies of zinc oxide over PS substrate has been reported. Effect of substrate oxidation and annealing has been studied. Changes in the structural properties were seen in the form of labyrinth patterns developed on the surface and were studied with the help of scanning electron microscope (SEM), atomic force microscope (AFM). X-ray diffraction (XRD) along with UV-visible absorption and photoluminescence (PL) spectroscopy were performed for characterizing the zinc oxide film and the hybrid structure. A relatively flat film of nanostructured zinc oxide particles is found to form on the oxidized substrate as compared to the nanostructured labyrinth patterns formed on the un-oxidized substrate with enhanced aspect ratio. Such micromorphologies can be very promising for fabricating highly sensitive gas sensors.

  3. Nano zinc oxide-sodium alginate antibacterial cellulose fibres.

    PubMed

    Varaprasad, Kokkarachedu; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Seo, Jongchul

    2016-01-01

    In the present study, antibacterial cellulose fibres were successfully fabricated by a simple and cost-effective procedure by utilizing nano zinc oxide. The possible nano zinc oxide was successfully synthesized by precipitation technique and then impregnated effectively over cellulose fibres through sodium alginate matrix. XRD analysis revealed the 'rod-like' shape alignment of zinc oxide with an interplanar d-spacing of 0.246nm corresponding to the (101) planes of the hexagonal wurtzite structure. TEM analysis confirmed the nano dimension of the synthesized zinc oxide nanoparticles. The presence of nano zinc oxide over cellulose fibres was evident from the SEM-EDS experiments. FTIR and TGA studies exhibited their effective bonding interaction. The tensile stress-strain curves data indicated the feasibility of the fabricated fibres for longer duration utility without any significant damage or breakage. The antibacterial studies against Escherichia coli revealed the excellent bacterial devastation property. Further, it was observed that when all the parameters remained constant, the variation of sodium alginate concentration showed impact in devastating the E. coli. In overall, the fabricated nano zinc oxide-sodium alginate cellulose fibres can be effectively utilized as antibacterial fibres for biomedical applications.

  4. Nano zinc oxide-sodium alginate antibacterial cellulose fibres.

    PubMed

    Varaprasad, Kokkarachedu; Raghavendra, Gownolla Malegowd; Jayaramudu, Tippabattini; Seo, Jongchul

    2016-01-01

    In the present study, antibacterial cellulose fibres were successfully fabricated by a simple and cost-effective procedure by utilizing nano zinc oxide. The possible nano zinc oxide was successfully synthesized by precipitation technique and then impregnated effectively over cellulose fibres through sodium alginate matrix. XRD analysis revealed the 'rod-like' shape alignment of zinc oxide with an interplanar d-spacing of 0.246nm corresponding to the (101) planes of the hexagonal wurtzite structure. TEM analysis confirmed the nano dimension of the synthesized zinc oxide nanoparticles. The presence of nano zinc oxide over cellulose fibres was evident from the SEM-EDS experiments. FTIR and TGA studies exhibited their effective bonding interaction. The tensile stress-strain curves data indicated the feasibility of the fabricated fibres for longer duration utility without any significant damage or breakage. The antibacterial studies against Escherichia coli revealed the excellent bacterial devastation property. Further, it was observed that when all the parameters remained constant, the variation of sodium alginate concentration showed impact in devastating the E. coli. In overall, the fabricated nano zinc oxide-sodium alginate cellulose fibres can be effectively utilized as antibacterial fibres for biomedical applications. PMID:26453887

  5. Ultrasound assisted additive free synthesis of nanocrystalline zinc oxide.

    PubMed

    Bhatte, Kushal D; Fujita, Shin-Ichiro; Arai, Masahiko; Pandit, Anirudha B; Bhanage, Bhalchandra M

    2011-01-01

    A novel method for the synthesis of nanocrystalline zinc oxide without any additive was developed using zinc acetate and 1,4-butanediol through sonication. The structure and morphology of prepared nanocrystalline zinc oxide was investigated by various techniques like TEM, XRD, EDAX, UV-Vis spectroscopy. The solvent 1,4-butanediol played a dual role of fuel as well as capping agent eliminating addition of any extraneous species. The results showed that using ultrasound sonication is green, cost effective compared to conventional wet chemical method for ZnO nanoparticle synthesis. PMID:20634118

  6. Zinc oxide nanostructures confined in porous silicas.

    PubMed

    Coasne, Benoit; Mezy, Aude; Pellenq, R J M; Ravot, D; Tedenac, J C

    2009-02-18

    We report on molecular simulations of zinc oxide nanostructures obtained within silica nanopores of diameter D = 1.6 nm and D = 3.2 nm. Both the effects of confinement (by varying the pore size) and degree of pore filling on the structure of the nanomaterial are addressed. Two complementary approaches are adopted: 1) the stability of the three crystalline phases of ZnO (wurtzite, rocksalt, and blende) in the silica nanopores is studied, and 2) ZnO nanostructures are obtained by slowly cooling down a homogeneous liquid phase confined in the silica pores. None of the ideal nanostructures (wurtzite, rocksalt, blende) retains the ideal structure of the initial crystal when confined within the silica pores. Only the structure starting from the ideal wurtzite nanocrystal remains significantly crystalline after relaxation, as revealed by the marked peaks in the pair correlation functions for this system. The morphology and degree of cristallinity of the structures are found to depend on the parameters involved in the synthesis (pore size, filling density). Nanograin boundaries are observed between domains of different crystal structures. Reminiscent features of the bulk behavior, such as faceting of the nanostructures, are also observed when the system size becomes large. We show that the use of nanopores as a template imposes that the confined particles exhibit neutral (basal) surfaces. These predictions provide a guide to experiments on semiconductor nanoparticles.

  7. Biomedical Applications of Zinc Oxide Nanomaterials

    PubMed Central

    Zhang, Yin; Nayak, Tapas R.; Hong, Hao; Cai, Weibo

    2013-01-01

    Nanotechnology has witnessed tremendous advancement over the last several decades. Zinc oxide (ZnO), which can exhibit a wide variety of nanostructures, possesses unique semiconducting, optical, and piezoelectric properties hence has been investigated for a wide variety of applications. One of the most important features of ZnO nanomaterials is low toxicity and biodegradability. Zn2+ is an indispensable trace element for adults (~10 mg of Zn2+ per day is recommended) and it is involved in various aspects of metabolism. Chemically, the surface of ZnO is rich in -OH groups, which can be readily functionalized by various surface decorating molecules. In this review article, we summarized the current status of the use of ZnO nanomaterials for biomedical applications, such as biomedical imaging (which includes fluorescence, magnetic resonance, positron emission tomography, as well as dual-modality imaging), drug delivery, gene delivery, and biosensing of a wide array of molecules of interest. Research in biomedical applications of ZnO nanomaterials will continue to flourish over the next decade, and much research effort will be needed to develop biocompatible/biodegradable ZnO nanoplatforms for potential clinical translation. PMID:24206130

  8. Enhanced zinc oxide and graphene nanostructures for electronics and sensing applications

    NASA Astrophysics Data System (ADS)

    Verma, Ved Prakash

    Zinc oxide and graphene nanostructures are important technological materials because of their unique properties and potential applications in future generation of electronic and sensing devices. This dissertation investigates a brief account of the strategies to grow zinc oxide nanostructures (thin film and nanowire) and graphene, and their applications as enhanced field effect transistors, chemical sensors and transparent flexible electrodes. Nanostructured zinc oxide (ZnO) and low-gallium doped zinc oxide (GZO) thin films were synthesized by a magnetron sputtering process. Zinc oxide nanowires (ZNWs) were grown by a chemical vapor deposition method. Field effect transistors (FETs) of ZnO and GZO thin films and ZNWs were fabricated by standard photo and electron beam lithography processes. Electrical characteristics of these devices were investigated by nondestructive surface cleaning, ultraviolet irradiation treatment at high temperature and under vacuum. GZO thin film transistors showed a mobility of ˜5.7 cm2/V·s at low operation voltage of <5 V and a low turn-on voltage of ˜0.5 V with a sub threshold swing of ˜85 mV/decade. Bottom gated FET fabricated from ZNWs exhibit a very high on-to-off ratio (˜106) and mobility (˜28 cm2/V·s). A bottom gated FET showed large hysteresis of ˜5.0 to 8.0 V which was significantly reduced to ˜1.0 V by the surface treatment process. The results demonstrate charge transport in ZnO nanostructures strongly depends on its surface environmental conditions and can be explained by formation of depletion layer at the surface by various surface states. A nitric oxide (NO) gas sensor using single ZNW, functionalized with Cr nanoparticles was developed. The sensor exhibited average sensitivity of ˜46% and a minimum detection limit of ˜1.5 ppm for NO gas. The sensor also is selective towards NO gas as demonstrated by a cross sensitivity test with N2, CO and CO2 gases. Graphene film on copper foil was synthesized by chemical vapor

  9. Genotoxic effects of zinc oxide nanoparticles.

    PubMed

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-21

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL(-1) using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn(2+) levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn(2+) with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn(2+) for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn(2+) may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn(2+) intake. Subsequently increased ROS-levels cause DNA damage. However, we found

  10. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  11. Genotoxic effects of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  12. Thermodynamics and kinetics of extracting zinc from zinc oxide ore by the ammonium sulfate roasting method

    NASA Astrophysics Data System (ADS)

    Sun, Yi; Shen, Xiao-yi; Zhai, Yu-chun

    2015-05-01

    Thermodynamic analyses and kinetic studies were performed on zinc oxide ore treatment by (NH4)2SO4 roasting technology. The results show that it is theoretically feasible to realize a roasting reaction between the zinc oxide ore and (NH4)2SO4 in a temperature range of 573-723 K. The effects of reaction temperature and particle size on the extraction rate of zinc were also examined. It is found that a surface chemical reaction is the rate-controlling step in roasting kinetics. The calculated activation energy of this process is about 45.57 kJ/mol, and the kinetic model can be expressed as follows: 1 - (1 - α)1/3 = 30.85 exp(-45.57/ RT)· t. An extraction ratio of zinc as high as 92% could be achieved under the optimum conditions.

  13. Synthesis of Gallium-oxide nanoparticles and nanowires by using a thermal plasma

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Hee; Park, Dong-Wha; Choi, Sooseok

    2015-04-01

    Gallium-oxide (Ga2O3) nanoparticles and nanowires were synthesized using a direct current arc thermal plasma. Gallium nitrate hydrate (Ga(NO3)3·xH2O) was used as a raw material for the synthesis of the Ga2O3 nanomaterials. (Ga(NO3)3·xH2O) was injected into the area of the thermal plasma in a liquid state with two different solvents, distilled water (H2O) and methyl alcohol (CH3OH). The as-synthesized Ga2O3 nanomaterials were characterized according to their crystallinity and morphology. In the cases of both the H2O and CH3OH solvents, the crystalline monoclinic β-Ga2O3 nanomaterials were synthesized in a reaction tube. Amorphous Ga2O3 nanoparticles were collected in a chamber in the case of the H2O solvent whereas amorphous Ga2O3 nanowires were found in the case of the CH3OH solvent. As a result, β-Ga2O3 nanoparticles, amorphous nanoparticles and nanowires were selectively synthesized by using a thermal plasma process, depending on the collection position of the product and the type of mixing solution.

  14. Equation of state of gallium oxide to 70 GPa: Comparison of quasihydrostatic and nonhydrostatic compression

    SciTech Connect

    Lipinska-Kalita, Kristina E.; Kalita, Patricia E.; Hemmers, Oliver A.; Hartmann, Thomas

    2008-04-28

    Synchrotron x-ray diffraction and diamond-anvil cell techniques were used to characterize pressure induced structural modifications in gallium oxide. Gallium oxide was studied on compression up to 70 GPa and on the following decompression. The effect of the pressure-transmitting medium on the structural transformations was investigated in two sets of compression and decompression runs, one with nitrogen as a quasihydrostatic pressure-transmitting medium and the other in nonhydrostatic pressure conditions. The x-ray diffraction data showed gradual phase transition from a low-density, monoclinic {beta}-Ga{sub 2}O{sub 3} to a high-density, rhombohedral {alpha}-Ga{sub 2}O{sub 3}. With the use of nitrogen as a pressure transmitting medium, the {beta}- to {alpha}-Ga{sub 2}O{sub 3} transition begins at about 6.5-7 GPa and extends up to {approx}40 GPa, confirming recent theoretical calculations. This pressure-driven transition is irreversible and the material decompressed from 70 GPa to ambient conditions was composed, in both sets of experimental runs, of {alpha}-Ga{sub 2}O{sub 3} only. A Birch-Murnaghan fit of the unit cell volume as a function of pressure yielded a zero pressure bulk modulus K{sub 0}=199(6) GPa, and its pressure derivative K{sub 0}'=3.1(4) for the {beta}-Ga{sub 2}O{sub 3} phase, and K{sub 0}=220(9) GPa and K{sub 0}'=5.9(6) for the {alpha}-Ga{sub 2}O{sub 3} phase for the experiments performed in quasihydrostatic compression conditions. When for the same experiment K{sub 0}' is held at 4, then the bulk modulus values are 184(3) and 252(14) GPa for {beta}-Ga{sub 2}O{sub 3} and the {alpha}-Ga{sub 2}O{sub 3}, respectively. We compare the results of this work with our previous studies on the high-pressure behavior of nanocrystalline gallium oxide.

  15. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    SciTech Connect

    Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A. Somov, P. A.; Terukov, E. I.

    2015-10-15

    Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

  16. Plasma in-liquid method for reduction of zinc oxide in zinc nanoparticle synthesis

    NASA Astrophysics Data System (ADS)

    Amaliyah, Novriany; Mukasa, Shinobu; Nomura, Shinfuku; Toyota, Hiromichi; Kitamae, Tomohide

    2015-02-01

    Metal air-batteries with high-energy density are expected to be increasingly applied in electric vehicles. This will require a method of recycling air batteries, and reduction of metal oxide by generating plasma in liquid has been proposed as a possible method. Microwave-induced plasma is generated in ethanol as a reducing agent in which zinc oxide is dispersed. Analysis by energy-dispersive x-ray spectrometry (EDS) and x-ray diffraction (XRD) reveals the reduction of zinc oxide. According to images by transmission electron microscopy (TEM), cubic and hexagonal metallic zinc particles are formed in sizes of 30 to 200 nm. Additionally, spherical fiber flocculates approximately 180 nm in diameter are present.

  17. Niobium-gallium oxide with a high concentration of Cr3+ ions: Photoluminescence and structural characteristics

    NASA Astrophysics Data System (ADS)

    Costa, G. K. B.; Pedro, S. S.; López, A.; Carvalho, I. C. S.; Cella, N.; Sosman, L. P.

    2016-10-01

    This work presents photoluminescence data for gallium-niobium oxide with chromium ion as an impurity. The samples were obtained by the solid-state method (SSM) and the wet-chemical method (WCM) and investigated by X-ray diffraction, photoluminescence, excitation, and photoacoustic and X-ray fluorescence. The color of the sample obtained by the SSM was pink, while the color of the sample prepared by the WCM was green. This dramatic difference was associated with Cr3+ concentration and with the neighborhood of the doping ions, obtained from crystallographic data, which is strongly dependent on the preparation method. The difference between the samples was also verified in the photoacoustic and excitation spectra, in which the energy bands were located at different energy levels; on the other hand, in the photoluminescence spectra, no band shift was observed. All spectra were assigned to chromium ions at nonequivalent octahedral sites.

  18. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

    SciTech Connect

    Kalygina, V. M. Vishnikina, V. V.; Zarubin, A. N.; Novikov, V. A.; Petrova, Yu. S.; Tolbanov, O. P.; Tyazhev, A. V.; Tcupiy, S. Y.; Yaskevich, T. M.

    2013-08-15

    The effect of the annealing temperature on the I-V, C-I, and G-V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga{sub 2}O{sub 3} powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures T{sub an} {>=} 800 Degree-Sign C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-Ga{sub x}O{sub y}-V/Ni samples to visible radiation depend on the structure and phase composition of the films.

  19. Optical cavity modes of a single crystalline zinc oxide microsphere.

    PubMed

    Moirangthem, Rakesh Singh; Cheng, Pi-Ju; Chien, Paul Ching-Hang; Ngo, Buu Trong Huynh; Chang, Shu-Wei; Tien, Chung-Hao; Chang, Yia-Chung

    2013-02-11

    A detailed study on the optical cavity modes of zinc oxide microspheres under the optical excitation is presented. The zinc oxide microspheres with diameters ranging from 1.5 to 3.0 µm are prepared using hydrothermal growth technique. The photoluminescence measurement of a single microsphere shows prominent resonances of whispering gallery modes at room temperature. The experimentally observed whispering gallery modes in the photoluminescence spectrum are compared with theoretical calculations using analytical and finite element methods in order to clarify resonance properties of these modes. The comparison between theoretical analysis and experiment suggests that the dielectric constant of the ZnO microsphere is somewhat different from that for bulk ZnO. The sharp resonances of whispering gallery modes in zinc oxide microspheres cover the entire visible window. They may be utilized in realizations of optical resonators, light emitting devices, and lasers for future chip integrations with micro/nano optoelectronic circuits, and developments of optical biosensors. PMID:23481759

  20. Zinc oxide nanoparticles for revolutionizing agriculture: synthesis and applications.

    PubMed

    Sabir, Sidra; Arshad, Muhammad; Chaudhari, Sunbal Khalil

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  1. Zinc Oxide Nanoparticles for Revolutionizing Agriculture: Synthesis and Applications

    PubMed Central

    Sabir, Sidra; Arshad, Muhammad

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles. PMID:25436235

  2. Zinc oxide nanoparticles for revolutionizing agriculture: synthesis and applications.

    PubMed

    Sabir, Sidra; Arshad, Muhammad; Chaudhari, Sunbal Khalil

    2014-01-01

    Nanotechnology is the most innovative field of 21st century. Extensive research is going on for commercializing nanoproducts throughout the world. Due to their unique properties, nanoparticles have gained considerable importance compared to bulk counterparts. Among other metal nanoparticles, zinc oxide nanoparticles are very much important due to their utilization in gas sensors, biosensors, cosmetics, drug-delivery systems, and so forth. Zinc oxide nanoparticles (ZnO NPs) also have remarkable optical, physical, and antimicrobial properties and therefore have great potential to enhance agriculture. As far as method of formation is concerned, ZnO NPs can be synthesized by several chemical methods such as precipitation method, vapor transport method, and hydrothermal process. The biogenic synthesis of ZnO NPs by using different plant extracts is also common nowadays. This green synthesis is quite safe and ecofriendly compared to chemical synthesis. This paper elaborates the synthesis, properties, and applications of zinc oxide nanoparticles.

  3. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-10-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2-4 nm) nanoparticles.

  4. Thin zinc oxide and cuprous oxide films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jeong, Seongho

    Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical and magnetic devices such as light emitting diodes, spintronic devices and solar cells. Among the oxide semiconductors, zinc oxide (ZnO) and cuprous oxide (Cu2O) are attractive because they are inexpensive, abundant and nontoxic. As synthesized ZnO is usually an intrinsic n - type semiconductor with wide band gap (3.4 eV) and can be used as the transparent conducting window layer in solar cells. As synthesized Cu2O is usually a p - type semiconductor with a band gap of 2.17 eV and has been considered as a potential material for the light absorbing layer in solar cells. I used various techniques including metal organic chemical vapor deposition, magnetron sputtering and atomic layer deposition to grow thin films of ZnO and Cu2O and fabricated Cu2O/ZnO heterojunctions. I specifically investigated the optical and electrical properties of Cu 2O thin films deposited on ZnO by MOCVD and showed that Cu2O thin films grow as single phase with [110] axis aligned perpendicular to the ZnO surface which is (0001) plane and with in-plane rotational alignment due to (220) Cu2O || (0002)ZnO; [001]Cu2O || [12¯10]ZnO epitaxy. Moreover, I fabricated solar cells based on these Cu2O/ZnO heterojunctions and characterized them. Electrical characterization of these solar cells as a function of temperature between 100 K and 300 K under illumination revealed that interface recombination and tunneling at the interface are the factors that limit the solar cell performance. To date solar cells based on Cu2O/ZnO heterojunctions had low open circuit voltages (~ 0.3V) even though the expected value is around 1V. I achieved open circuit voltages approaching 1V at low temperature (~ 100 K) and showed that if interfacial recombination is reduced these cells can achieve their predicted potential.

  5. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach

    NASA Astrophysics Data System (ADS)

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; van Dorsselaer, Alain; Rabilloud, Thierry

    2014-05-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations.Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate

  6. Sealed silver oxide zinc cells for orbiting and planetary missions.

    NASA Technical Reports Server (NTRS)

    Hennigan, T. J.; Palandati, C. F.

    1972-01-01

    Several test programs were carried out to determine the performance and limitations of sealed, silver oxide zinc cells for (1) 24-hr synchronous orbits, (2) orbits that would require a maximum of six cycles per day, and (3) missions to other planets requiring maintenance of maximum capacity for probe operations during planet encounter. The results are summarized to provide power system designers with guidelines bearing on capacity maintenance during cycling, cycle life, charged stand effects, and internal pressure characteristics. The life of zinc silver oxide cells is shown to be limited to one to two years over the temperature range of 0 to 24 C.

  7. Hydrogen Reduction of Zinc and Iron Oxides Containing Mixtures

    NASA Astrophysics Data System (ADS)

    de Siqueira, Rogério Navarro C.; de Albuquerque Brocchi, Eduardo; de Oliveira, Pamela Fernandes; Motta, Marcelo Senna

    2013-10-01

    Zinc is a metal of significant technological importance and its production from secondary sources has motivated the development of alternative processes, such as the chemical treatment of electrical arc furnace (EAF) dust. Currently, the extraction of zinc from the mentioned residue using a carbon-containing reducing agent is in the process of being established commercially and technically. In the current study, the possibility of reducing zinc from an EAF dust sample through a H2 constant flux in a horizontal oven is studied. The reduction of a synthetic oxide mixture of analogous composition is also investigated. The results indicated that the reduction process is thermodynamically viable for temperatures higher than 1123 K (850 °C), and all zinc metal produced is transferred to the gas stream, enabling its complete separation from iron. The same reaction in the presence of zinc crystals was considered for synthesizing FeZn alloys. However, for the experimental conditions employed, although ZnO reduction was indeed thermodynamically hindered because of the presence of zinc crystals (the metal's partial pressure was enhanced), the zinc metal's escape within the gaseous phase could not be effectively avoided.

  8. Combined administration of oxalic acid, succimer and its analogue for the reversal of gallium arsenide-induced oxidative stress in rats.

    PubMed

    Flora, Swaran J S; Kannan, Gurusamy M; Pant, Bhagwat P; Jaiswal, Devendra K

    2002-06-01

    Gallium arsenide (GaAs), a group III-VA intermetallic semiconductor, possesses superior electronic and optical properties and has a wide application in the electronics industry. Exposure to GaAs in the semiconductor industry is a potential occupational hazard because cleaning and slicing GaAs ingots to yield the desired wafer could generate GaAs particles. The ability of GaAs to induce oxidative stress has not yet been reported. The present study reports the role of oxidative stress in GaAs-induced haematological and liver disorders and its possible reversal overturn by administration of meso-2,3-dimercaptosuccinic acid (DMSA) and one of its analogue, monoisoamyl DMSA (MiADMSA), either individually or in combination with oxalic acid. While DMSA and MiADMSA are potential arsenic chelators, oxalic acid is reported to be an effective gallium chelator. Male rats were exposed to 10 mg/kg GaAs orally, 5 days a week for 8 weeks. GaAs exposure was then stopped and rats were given a 0.5 mmol/kg dose of succimers (DMSA or MiADMSA), oxalic acid or a combination of the two, intraperitoneally once daily for 5 consecutive days. We found a significant fall in blood delta-aminolevulinic acid dehydratase (ALAD) activity and blood glutathione (GSH) level, and an increased urinary excretion of delta-aminolevulinic acid (ALA) and an increased malondialdehyde (MDA) level in erythrocytes of rats exposed to GaAs. Hepatic GSH levels decreased, whereas there was an increase in GSSG and MDA levels. The results suggest a role of oxidative stress in GaAs-induced haematological and hepatic damage. Administration of DMSA and MiADMSA produced effective recovery in most of the above variables. However, a greater effectiveness of the chelation treatment (i.e. removal of both gallium and arsenic from body organs) could be achieved by combined administration of succimer (DMSA) with oxalic acid since, after MiADMSA administration, a marked loss of essential metals (copper and zinc) is of concern.

  9. Effect of modifying agents on the hydrophobicity and yield of zinc borate synthesized by zinc oxide

    NASA Astrophysics Data System (ADS)

    Acarali, Nil Baran; Bardakci, Melek; Tugrul, Nurcan; Derun, Emek Moroydor; Piskin, Sabriye

    2013-06-01

    The aim of this study was to synthesize zinc borate using zinc oxide, reference boric acid, and reference zinc borate (reference ZB) as the seed, and to investigate the effects of modifying agents and reaction parameters on the hydrophobicity and yield, respectively. The reaction parameters include reaction time (1-5 h), reactant ratio (H3BO3/ZnO by mass: 2-5), seed ratio (seed crystal/(H3BO3+ZnO) by mass: 0-2wt%), reaction temperature (50-120°C), cooling temperature (10-80°C), and stirring rate (400-700 r/min); the modifying agents involve propylene glycol (PG, 0-6wt%), kerosene (1wt%-6wt%), and oleic acid (OA, 1wt%-6wt%) with solvents (isopropyl alcohol (IPA), ethanol, and methanol). The results of reaction yield obtained from either magnetically or mechanically stirred systems were compared. Zinc borate produced was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and contact angle tests to identify the hydrophobicity. In conclusion, zinc borate is synthesized successfully under the optimized reaction conditions, and the different modifying agents with various solvents affect the hydrophobicity of zinc borate.

  10. Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols.

    PubMed

    Basharat, Siama; Carmalt, Claire J; Binions, Russell; Palgrave, Robert; Parkin, Ivan P

    2008-02-01

    Thin films of Ga(2)O(3) have been produced from [Ga(NMe(2))(3)](2) and ROH (R = CH(2)CH(2)NMe(2), CH(CH(2)NMe(2))(2), CH(CH(3))CH(2)NMe(2), CH(2)CH(2)OMe and C(CH(3))(2)CH(2)OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 degrees C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures. PMID:18217113

  11. Size effects in the thermal conductivity of gallium oxide (β-Ga2O3) films grown via open-atmosphere annealing of gallium nitride

    NASA Astrophysics Data System (ADS)

    Szwejkowski, Chester J.; Creange, Nicole C.; Sun, Kai; Giri, Ashutosh; Donovan, Brian F.; Constantin, Costel; Hopkins, Patrick E.

    2015-02-01

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga2O3 grown via this technique (8.8 ± 3.4 W m-1 K-1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga2O3 film resulting from phonon scattering at the β-Ga2O3/GaN interface and thermal transport across the β-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  12. Application of zinc oxide quantum dots in food safety

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  13. Potassium silicate-zinc oxide solution for metal finishes

    NASA Technical Reports Server (NTRS)

    Schutt, J. B.

    1970-01-01

    Examples of zinc dust formulations, which are not subject to cracking or crazing, are fire retardant, and have high adhesive qualities, are listed. The potassium silicate in these formulations has mol ratios of dissolved silica potassium oxide in the range 4.8 to 1 - 5.3 to 1.

  14. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1991-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  15. Process for fabricating doped zinc oxide microsphere gel

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1991-11-05

    Disclosed are a new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  16. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  17. Investigation of Optical Properties of Zinc Oxide Photodetector

    NASA Astrophysics Data System (ADS)

    Chism, Tyler

    UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today's photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this research a metal-semiconductor-metal UV photodetector has been fabricated by using a quartz substrate on top of which was deposited micropatterned gold in an interdigitated electrode design. On this, sparsely coated zinc oxide nano trees were hydrothermally grown. The UV photodetection device showed promise for detection applications, especially because zinc oxide is also very thermally stable, a quality which is highly sought after in today's UV photodetectors. Furthermore, the newly synthesized photodetector was used to investigate optical properties and how they respond to different stimuli. It was discovered that the photons transmitted through the sparsely coated zinc oxide nano trees decreased as the voltage across the device increased. This research is aimed at better understanding photons interaction with matter and also to open the door for new devices with tunable optical properties such as transmission.

  18. Microfluorescence analysis of nanostructuring inhomogeneity in optical fibers with embedded gallium oxide nanocrystals.

    PubMed

    Mashinsky, Valery M; Karatun, Nikita M; Bogatyrev, Vladimir A; Sigaev, Vladimir N; Golubev, Nikita V; Ignat'eva, Elena S; Lorenzi, Roberto; Mozzati, Maria Cristina; Paleari, Alberto; Dianov, Evgeny M

    2012-04-01

    A spectroscopic protocol is proposed to implement confocal microfluorescence imaging to the analysis of microinhomogeneity in the nanocrystallization of the core of fibers belonging to a new kind of broadband fiber amplifier based on glass with embedded nanocrystals. Nanocrystallization, crucial for achieving an adequate light emission efficiency of transition metal ions in these materials, has to be as homogeneous as possible in the fiber to assure optical amplification. This requirement calls for a sensitive method for monitoring nanostructuring in oxide glasses. Here we show that mapping microfluorescence excited at 633 nm by a He-Ne laser may give a useful tool in this regard, thanks to quasi-resonant excitation of coordination defects typical of germanosilicate materials, such as nonbridging oxygens and charged Ge-O-Ge sites, whose fluorescence are shown to undergo spectral modifications when nanocrystals form into the glass. The method has been positively checked on prototypes of optical fibers--preventively characterized by means of scanning electron microscopy and energy dispersive spectroscopy--fabricated from preforms of Ni-doped Li₂O-Na₂O-Sb₂O₃-Ga₂O₃-GeO₂-SiO₂ glass in silica cladding and subjected to heat treatment to activate gallium oxide nanocrystal growth. The method indeed enables not only the mapping of the crystallization degree but also the identification of drawing-induced defects in the fiber cladding.

  19. Epitaxial Growth of Zinc Oxide on Single Crystalline Gold Plates

    NASA Astrophysics Data System (ADS)

    Greenberg, Kathryn; Joo, John; Baram, Mor; Clarke, David; Hu, Evelyn

    2012-02-01

    Although metal-oxide interfaces are the critical components of many electronic and optical devices, it is rare to find epitaxial metal-oxide structures. We demonstrate for the first time, a method for the low temperature, epitaxial growth of zinc oxide (ZnO) on single crystalline gold plates. The gold plates, up to 100μm in width, are grown from a gold-surfactant complex. Even with the large lattice mismatch between (111) gold and (0001) ZnO, we are able to form epitaxial zinc oxide at 90^oC on top of the single crystal gold plates. This epitaxial growth is confirmed using transmission electron microscopy, electron diffraction, and electron backscatterer diffraction. Micro-photoluminescence is also performed to investigate the optical properties of the epitaxial zinc oxide. We remove the grown ZnO membranes from the gold plates using a stamping and etching process. These membranes can potentially be used to fabricate high quality microdisks and photonic crystals. The metal-oxide interfaces that we have fabricated may have the ability to be used in a number of technologically important applications, including as better electrical contacts and for improved light extraction from planar LED structures.

  20. Analysis of cellular responses of macrophages to zinc ions and zinc oxide nanoparticles: a combined targeted and proteomic approach.

    PubMed

    Triboulet, Sarah; Aude-Garcia, Catherine; Armand, Lucie; Gerdil, Adèle; Diemer, Hélène; Proamer, Fabienne; Collin-Faure, Véronique; Habert, Aurélie; Strub, Jean-Marc; Hanau, Daniel; Herlin, Nathalie; Carrière, Marie; Van Dorsselaer, Alain; Rabilloud, Thierry

    2014-06-01

    Two different zinc oxide nanoparticles, as well as zinc ions, are used to study the cellular responses of the RAW 264 macrophage cell line. A proteomic screen is used to provide a wide view of the molecular effects of zinc, and the most prominent results are cross-validated by targeted studies. Furthermore, the alteration of important macrophage functions (e.g. phagocytosis) by zinc is also investigated. The intracellular dissolution/uptake of zinc is also studied to further characterize zinc toxicity. Zinc oxide nanoparticles dissolve readily in the cells, leading to high intracellular zinc concentrations, mostly as protein-bound zinc. The proteomic screen reveals a rather weak response in the oxidative stress response pathway, but a strong response both in the central metabolism and in the proteasomal protein degradation pathway. Targeted experiments confirm that carbohydrate catabolism and proteasome are critical determinants of sensitivity to zinc, which also induces DNA damage. Conversely, glutathione levels and phagocytosis appear unaffected at moderately toxic zinc concentrations.

  1. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

    SciTech Connect

    Ramana, C. V. Rubio, E. J.; Barraza, C. D.; Miranda Gallardo, A.; McPeak, Samantha; Kotru, Sushma; Grant, J. T.

    2014-01-28

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were made by sputter deposition employing a Ga{sub 2}O{sub 3} ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T{sub s}), from 25 to 600 °C. The effect of T{sub s} on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p{sub 3/2} and Ga 2p{sub 1/2} peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga{sup 3+}) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga{sub 2}O{sub 3} phase. The granular morphology of the nanocrystalline Ga{sub 2}O{sub 3} films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T{sub s}. The SE analyses indicate that the index of refraction (n) of Ga{sub 2}O{sub 3} films increases with increasing T{sub s} due to improved structural quality and packing density of the films. The n(λ) of all the Ga{sub 2}O{sub 3} films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga{sub 2}O{sub 3} films grown at T{sub s} = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga{sub 2}O{sub 3} films grown at T{sub s} ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga{sub 2}O{sub 3} films is derived.

  2. Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.

    PubMed

    Lee, Yun Seog; Chua, Danny; Brandt, Riley E; Siah, Sin Cheng; Li, Jian V; Mailoa, Jonathan P; Lee, Sang Woon; Gordon, Roy G; Buonassisi, Tonio

    2014-07-16

    The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

  3. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  4. Kinetics of the dissolution of zinc sulfide in an oxidizing slag

    NASA Astrophysics Data System (ADS)

    Gupta, Suresh K.

    1990-10-01

    A new concept has been developed for the production of zinc from zinc and complex zinc concentrates. It is a two-stage process involving oxidation of zinc sulfide to oxide and dissolution into slag and the fuming of zinc from the slag by injecting carbonaceous materials into it to produce zinc vapors which can be subsequently condensed in a lead-splash condenser such as those used in the Imperial Smelting Process (ISP). In this paper, the effects of the quantity of air, temperature, and concentrate feed rate have been discussed on the production of zinc-rich slag, which is the first stage of the proposed process.

  5. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  6. Collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors using oxidized aluminum arsenide for current confinement

    NASA Astrophysics Data System (ADS)

    Massengale, Alan Ross

    1998-12-01

    The discovery in 1990 that the wet thermal oxidation of AlAs can create a stable native oxide has added a new constituent, AlAs-oxide, to the AlGaAs/GaAs materials system. Native oxides of high Al mole-fraction AlGaAs are being used to confine electrical and/or optical fields in many types of electronic and optoelectronic structures with very promising results. Among these devices are collector-up heterojunction bipolar transistors (HBTs). Collector-up HBTs offer a means to reduce base-collector capacitance relative to their emitter-up counterparts, and thus to improve device performance. A novel method for fabricating collector-up AlGaAs/GaAs HBTs where an AlAs layer is inserted into the emitter layer and is oxidized in water vapor at 450sp°C has been developed. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. Compared to previous methods of fabricating these devices, the process of converting AlAs into an insulator requires only one growth, and does not suffer from implant damage in the base. Because the lateral oxidation of AlAs is a process that proceeds at rates of microns per minute, one of the major challenges facing its implementation is the ability to accurately control the oxidation rate over the wafer, and from one wafer to the next. In the course of work on the oxidation of AlAs, a method to lithographically form lateral oxidation stop layers has been achieved. This technique utilizes impurity induced layer disordering (IILD) in heavily Si-doped buried planes, combined with selective surface patterning and thermal annealing, to create a lateral variation in the Al mole-fraction of the layer to be oxidized.

  7. Optical and field emission properties of Zinc Oxide nanostructures.

    PubMed

    Pan, Hui; Zhu, Yanwu; Ni, Zhenhua; Sun, Han; Poh, Cheekok; Lim, Sanhua; Sow, Chornghaur; Shen, Zexiang; Feng, Yuanping; Lin, Jianyi

    2005-10-01

    Zinc Oxide (ZnO) nano-pikes were produced by oxidative evaporation and condensation of Zn powders. The crystalline structure and optical properties of the ZnO nanostructures (ZnONs) greatly depend on the deposition position of the ZnONs. TEM and XRD indicated that the ZnONs close to the reactor center, ZnON-A, has better crystalline structure than the ZnONs away from the center, ZnON-B. ZnON-A showed the PL and Raman spectra characteristic of perfect ZnO crystals, whereas ZnON-B produced very strong green emission band at 500 nm in the photoluminescence (PL) spectrum and very strong Raman scattering peak at 560 cm(-1), both related to the oxygen deficiency due to insufficient oxidation of zinc vapor. ZnON-B exhibited better field emission properties with higher emission current density and lower turn-on field than ZnON-A.

  8. Sulfidation and reduction of zinc titanate and zinc oxide sorbents for injection in gasifier exit ducts

    SciTech Connect

    Ishikawa, K. |; Krueger, C.; Flytzani-Stephanopoulos, M.; Jl, W.; Higgins, R.J.; Bishop, B.A.; Goldsmith, R.L.

    1995-12-31

    The sulfidation reaction kinetics of fine particles of zinc titanate and zinc oxide with H{sub 2}S were studied in order to test the potential of the sorbent injection hot-gas desulfurization process. Fine sorbent particles with diameter between 0.3 and 60 {mu}m were sulfided with H{sub 2}S and/or reduced with H{sub 2} in a laminar flow reactor over the temperature range of 500-900{degrees}C. Sulfidation/reduction conversion was compared for different particle sizes and sorbents with various porosities and atomic ratios of Zn and Ti. In reduction of ZnO with H{sub 2} and without H{sub 2}S, significant amount of Zn was formed and vaporized, while the presence of H{sub 2}S suppressed elemental Zn formation. This suggests that H{sub 2}S may suppress the surface reduction of ZnO and/or gaseous Zn may react with H{sub 2}S homogeneously and form fine particles of ZnS. Formation and vaporization of elemental Zn from zinc titanate sorbents was slower than from zinc oxide with and without H{sub 2}S.

  9. Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

    SciTech Connect

    Allen, T. G. Cuevas, A.

    2014-07-21

    This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1 cm/s have been recorded with films less than 4.5 nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2 Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5 eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9 eV.

  10. Millimeter wave ferromagnetic resonance in gallium-substituted ε-iron oxide

    NASA Astrophysics Data System (ADS)

    Chao, Liu; Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2014-05-01

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe12O19) and strontium ferrite (SrFe12O19), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ɛ-iron oxides (ɛ-GaxFe2-xO3) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz-150 GHz. The ɛ-GaxFe2-xO3 is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ɛ-GaxFe2-xO3 particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ɛ-GaxFe2-xO3 are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  11. Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

    SciTech Connect

    Ning, J.Q.; Xu, S.J.; Wang, P.W.; Song, Y.P.; Yu, D.P.; Shan, Y.Y.; Lee, S.T.; Yang, H.

    2012-11-15

    Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.

  12. Supermicroporous alumina-silica zinc oxides

    SciTech Connect

    Shpeizer, Boris G; Bakhmutov, Vladimir I; Clearfield, Abraham

    2008-09-29

    A new family of porous mixed oxides with pores largely in the 8-20 {angstrom} range have been prepared. TEOS acts as a solvent and as a source of silica to which aluminum butoxide and transition metal acetates are added. Neutral amines are added as templates and to effect hydrolysis. This paper describes the ZnO-Al{sub 2}O{sub 5}-SiO{sub 2} system but similar results have been obtained with other transition metal oxides. An interesting feature of the technique is that the larger the amine template the greater is the surface area of the mixed oxide with only a slight increase in the average pore diameter. Both NMR and atomic pair distribution functional methods have been used to prove the homogeneity of the mixed oxide products. This preparative method complements our earlier report in Chemical Communications on mixed oxides prepared with ZrO{sub 2} and TiO{sub 2} incorporating transition metal oxides.

  13. A long life zinc oxide-titanium oxide sorbent for moving bed reactors

    SciTech Connect

    Copeland, R.; Cesario, M.; Dubovik, M.; Feinberg, D.; Windecker, B.; Yang, J.

    1996-12-31

    Coal Fired Gasifier Combined Cycles (GCCs) have both high efficiency and very low emissions. GCCs are in critical need of a method to remove the H{sub 2}S produced from the sulfur in the coal from the hot gases. There has been extensive research on hot gas clean-up systems, focused on the use of a zinc oxide based sorbent (e.g., zinc titanate). However, the previous sorbents show significant losses in sulfur capacity with cycling. TDA Research, Inc. recently increased the zinc oxide content and sulfur loadings while simultaneously improving the attrition resistance. The improved fabrication method produces long life, low cost sorbent containing zinc oxide. The authors are currently testing sorbents at conditions simulating a moving bed reactor for GCC [i.e., 20 atm, 482 C (900 F) to 538 C (1,000 F), and 1% H{sub 2}S].

  14. Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes

    NASA Astrophysics Data System (ADS)

    Rubio, Ernesto Javier

    Currently, there is enormous interest in research, development and optimization of the combustion processes for energy harvesting. Recent statistical and economic analyses estimated that by improving the coal-based firing/combustion processes in the power plants, savings up to $450-500 million yearly can be achieved. Advanced sensors and controls capable of withstanding extreme environments such as high temperatures, highly corrosive atmospheres, and high pressures are critical to such efficiency enhancement and cost savings. For instance, optimization of the combustion processes in power generation systems can be achieved by sensing, monitoring and control of oxygen, which is a measure of the completeness of the process and can lead to enhanced efficiency and reduced greenhouse gas emissions. However, despite the fact that there exists a very high demand for advanced sensors, the existing technologies suffer from poor 'response and recovery times' and 'long-term stability.' Motivated by the aforementioned technological challenges, the present work was focused on high-temperature (≥700 °C) oxygen sensors for application in power generation systems. The objective of the present work is to investigate nanostructured gallium oxide (2O3) based sensors for oxygen sensing, where we propose to conduct in-depth exploration of the role of refractory metal (tungsten, W, in this case) doping into 2O 3 to enhance the sensitivity, selectivity, stability ("3S" criteria) and reliability of such sensors while keeping cost economical. Tungsten (W) doped gallium oxide (2O3) thin films were deposited via rf-magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying the sputtering power applied to the W-target in order to achieve variable W content into 2O3 films while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-grown and post-annealed W-doped 2O3

  15. Size effects in the thermal conductivity of gallium oxide (β-Ga{sub 2}O{sub 3}) films grown via open-atmosphere annealing of gallium nitride

    SciTech Connect

    Szwejkowski, Chester J.; Giri, Ashutosh; Donovan, Brian F.; Hopkins, Patrick E.; Creange, Nicole C.; Constantin, Costel; Sun, Kai

    2015-02-28

    Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga{sub 2}O{sub 3}) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga{sub 2}O{sub 3} films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga{sub 2}O{sub 3} films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga{sub 2}O{sub 3} grown via this technique (8.8 ± 3.4 W m{sup −1} K{sup −1}) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga{sub 2}O{sub 3} film resulting from phonon scattering at the β-Ga{sub 2}O{sub 3}/GaN interface and thermal transport across the β-Ga{sub 2}O{sub 3}/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga{sub 2}O{sub 3} and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices.

  16. Degradation of hydrocortisone in a zinc oxide lotion.

    PubMed

    Timmins, P; Gray, E A

    1983-03-01

    An extemporaneous topical steroid formulation, prepared from a zinc oxide lotion and hydrocortisone lotion BPC, had poor stability. Hydrocortisone decomposed mainly to the 21-aldehyde, but other degradation products were also identified by HPLC. The decomposition process could be described by first-order kinetics. Stabilization methods employing pH adjustment, antioxidants and chelating agents were unsuccessful. The study emphasizes the dangers of diluting commercial formulations with unrecommended bases and indicates the modes of decomposition of hydrocortisone in a formulation.

  17. Enterococcus faecalis zinc-responsive proteins mediate bacterial defence against zinc overload, lysozyme and oxidative stress.

    PubMed

    Abrantes, Marta C; Kok, Jan; Silva Lopes, Maria de Fátima

    2014-12-01

    Two Enterococcus faecalis genes encoding the P-type ATPase EF1400 and the putative SapB protein EF0759 were previously shown to be strongly upregulated in the presence of high concentrations of zinc. In the present work, we showed that a Zn(2+)-responsive DNA-binding motif (zim) is present in the promoter regions of these genes. Both proteins were further studied with respect to their involvement in zinc homeostasis and invasion of the host. EF0759 contributed to intramacrophage survival by an as-yet unknown mechanism(s). EF1400, here renamed ZntAEf, is an ATPase with specificity for zinc and plays a role in dealing with several host defences, i.e. zinc overload, oxidative stress and lysozyme; it provides E. faecalis cells with the ability to survive inside macrophages. As these three host defence mechanisms are important at several sites in the host, i.e. inside macrophages and in saliva, this work suggested that ZntAEf constitutes a crucial E. faecalis defence mechanism that is likely to contribute to the ability of this bacterium to endure life inside its host.

  18. Simple phosphinate ligands access zinc clusters identified in the synthesis of zinc oxide nanoparticles

    PubMed Central

    Pike, Sebastian D.; White, Edward R.; Shaffer, Milo S. P.; Williams, Charlotte K.

    2016-01-01

    The bottom-up synthesis of ligand-stabilized functional nanoparticles from molecular precursors is widely applied but is difficult to study mechanistically. Here we use 31P NMR spectroscopy to follow the trajectory of phosphinate ligands during the synthesis of a range of ligated zinc oxo clusters, containing 4, 6 and 11 zinc atoms. Using an organometallic route, the clusters interconvert rapidly and self-assemble in solution based on thermodynamic equilibria rather than nucleation kinetics. These clusters are also identified in situ during the synthesis of phosphinate-capped zinc oxide nanoparticles. Unexpectedly, the ligand is sequestered to a stable Zn11 cluster during the majority of the synthesis and only becomes coordinated to the nanoparticle surface, in the final step. In addition to a versatile and accessible route to (optionally doped) zinc clusters, the findings provide an understanding of the role of well-defined molecular precursors during the synthesis of small (2–4 nm) nanoparticles. PMID:27734828

  19. Superior antibacterial activity of zinc oxide/graphene oxide composites originating from high zinc concentration localized around bacteria.

    PubMed

    Wang, Yan-Wen; Cao, Aoneng; Jiang, Yu; Zhang, Xin; Liu, Jia-Hui; Liu, Yuanfang; Wang, Haifang

    2014-02-26

    New materials with good antibacterial activity and less toxicity to other species attract numerous research interest. Taking advantage of zinc oxide (ZnO) and graphene oxide (GO), the ZnO/GO composites were prepared by a facile one-pot reaction to achieve superior antibacterial properties without damaging other species. In the composites, ZnO nanoparticles (NPs), with a size of about 4 nm, homogeneously anchored onto GO sheets. The typical bacterium Escherichia coli and HeLa cell were used to evaluate the antibacterial activity and cytotoxicity of the ZnO/GO composites, respectively. The synergistic effects of GO and ZnO NPs led to the superior antibacterial activity of the composites. GO helped the dispersion of ZnO NPs, slowed the dissolution of ZnO, acted as the storage site for the dissolved zinc ions, and enabled the intimate contact of E. coli with ZnO NPs and zinc ions as well. The close contact enhanced the local zinc concentration pitting on the bacterial membrane and the permeability of the bacterial membrane and thus induced bacterial death. In addition, the ZnO/GO composites were found to be much less toxic to HeLa cells, compared to the equivalent concentration of ZnO NPs in the composites. The results indicate that the ZnO/GO composites are promising disinfection materials to be used in surface coatings on various substrates to effectively inhibit bacterial growth, propagation, and survival in medical devices.

  20. Zinc in the prevention of Fe2+-initiated lipid and protein oxidation.

    PubMed

    Zago, M P; Verstraeten, S V; Oteiza, P I

    2000-01-01

    In the present study we characterized the capacity of zinc to protect lipids and proteins from Fe2+-initiated oxidative damage. The effects of zinc on lipid oxidation were investigated in liposomes composed of brain phosphatidylcholine (PC) and phosphatidylserine (PS) at a molar relationship of 60:40 (PC:PS, 60:40). Lipid oxidation was evaluated as the oxidation of cis-parinaric acid or as the formation of 2-thiobarbituric acid-reactive substances (TBARS). Zinc protected liposomes from Fe2+ (2.5-50 microM)-supported lipid oxidation. However, zinc (50 microM) did not prevent the oxidative inactivation of glutamine synthetase and glucose 6-phosphate dehydrogenase when rat brain supernatants were oxidized in the presence of 5 microM Fe2+ and 0.5 mM H2O2. We also studied the interactions of zinc with epicatechin in the prevention of lipid oxidation in liposomes. The simultaneous addition of 0.5 microM epicatechin (EC) and 50 microM zinc increased the protection of liposomes from oxidation compared to that observed in the presence of zinc or EC separately. Zinc (50 microM) also protected liposomes from the stimulatory effect of aluminum on Fe2+-initiated lipid oxidation. Zinc could play an important role as an antioxidant in biological systems, replacing iron and other metals with pro-oxidant activity from binding sites and interacting with other components of the oxidant defense system. PMID:15693281

  1. Zinc-oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasael

    2010-03-23

    Zinc oxide-based sorbents, and processes for preparing and using them are provided. The sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents comprise an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, comprising a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  2. Zinc oxide-based sorbents and processes for preparing and using same

    DOEpatents

    Gangwal, Santosh Kumar; Turk, Brian Scott; Gupta, Raghubir Prasad

    2005-10-04

    Zinc oxide-based sorbents, and processes for preparing and using them are provided, wherein the sorbents are preferably used to remove one or more reduced sulfur species from gas streams. The sorbents contain an active zinc component, optionally in combination with one or more promoter components and/or one or more substantially inert components. The active zinc component is a two phase material, consisting essentially of a zinc oxide (ZnO) phase and a zinc aluminate (ZnAl.sub.2 O.sub.4) phase. Each of the two phases is characterized by a relatively small crystallite size of typically less than about 500 Angstroms. Preferably the sorbents are prepared by converting a precursor mixture, containing a precipitated zinc oxide precursor and a precipitated aluminum oxide precursor, to the two-phase, active zinc oxide containing component.

  3. Indium and gallium oxynitrides prepared in the presence of Zn{sup 2+} by ammonolysis of the oxide precursors obtained via the citrate route

    SciTech Connect

    Miyaake, Azumi; Masubuchi, Yuji; Takeda, Takashi; Kikkawa, Shinichi

    2010-04-15

    Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In{sub 0.97}{open_square}{sub 0.03}][N{sub 0.92}O{sub 0.08}] at 660 {sup o}C and [Ga{sub 0.89}{open_square}{sub 0.11}][N{sub 0.66}O{sub 0.34}] at 850 {sup o}C, respectively, where {open_square} refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn{sup 2+} by forming complete solid solutions of (InN){sub 1-x}(ZnO){sub x} and (GaN){sub 1-y}(ZnO){sub y}. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x {approx} 0.23 and y {approx} 0.33 compared to the case without zinc.

  4. Durable zinc oxide-containing sorbents for coal gas desulfurization

    SciTech Connect

    Siriwardane, R.V.

    1994-12-31

    Durable zinc-oxide containing sorbent pellets for removing hydrogen sulfide from a gas stream at an elevated temperature are made up to contain titania as a diluent, high-surface-area silica gel as a matrix material, and a binder. These materials are mixed, moistened, and formed into pellets, which are then dried and calcined. The resulting pellets undergo repeated cycles of sulfidation and regeneration without loss of reactivity and without mechanical degradation. Regeneration of the pellets is carried out by contacting the bed with an oxidizing gas mixture.

  5. Durable zinc oxide-containing sorbents for coal gas desulfurization

    DOEpatents

    Siriwardane, Ranjani V.

    1996-01-01

    Durable zinc-oxide containing sorbent pellets for removing hydrogen sulfide from a gas stream at an elevated temperature are made up to contain titania as a diluent, high-surface-area silica gel, and a binder. These materials are mixed, moistened, and formed into pellets, which are then dried and calcined. The resulting pellets undergo repeated cycles of sulfidation and regeneration without loss of reactivity and without mechanical degradation. Regeneration of the pellets is carried out by contacting the bed with an oxidizing gas mixture.

  6. The overexpression of NADPH-producing enzymes counters the oxidative stress evoked by gallium, an iron mimetic.

    PubMed

    Bériault, R; Hamel, R; Chenier, D; Mailloux, Ryan J; Joly, H; Appanna, V D

    2007-04-01

    Gallium (Ga), an iron (Fe) mimetic promoted an oxidative environment and elicited an antioxidative response in Pseudomonas fluorescens. Ga-stressed P. fluorescens was characterized by higher amounts of oxidized lipids and proteins compared to control cells. The oxidative environment provoked by Ga was nullified by increased synthesis of NADPH. The activity and expression glucose 6-phosphate dehydrogenase (G6PDH) and isocitrate dehydrogenase-NADP (ICDH) were stimulated in Ga-cultures. The induction of isoenzymes of these dehydrogenases was also evident in the Ga-stressed cells. Although superoxide dismutase (SOD) activity was significantly enhanced in Ga-stressed cultures, catalase activity experienced a marked diminution. Fe metabolism appeared to be severely impeded by Ga toxicity. This is the first demonstration of the oxidative stress evoked by Ga to be neutralized by a reductive environment generated via the overexpression of NADPH-producing enzymes. PMID:16900398

  7. Millimeter wave ferromagnetic resonance in gallium-substituted ε-iron oxide

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2014-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  8. High temperature electrolysis: zinc from zinc oxide using a solar furnace

    SciTech Connect

    MacDonald, F.J.

    1986-01-01

    Exploratory research was conducted in high temperature metal extraction using a concentrating solar furnace for process heat. Electrolysis of zinc oxide was performed using various molten salts as electrolytes; 13% AlF/sub 3//87% NaF, 45% AlF/sub 3//55% NaF, 33% ZnF/sub 2//67% NaF and NaOH. The temperature range investigated was 600 to 1400 K. Several materials were tried as crucibles and electrodes with the best being graphite for the cathode and crucible, and platinum for the anode. Experiments were performed where the zinc produced was collected and the current and voltage were measured. From this data, current efficiencies were calculated and decomposition potentials were determined.

  9. Field emission behavior of cuboid zinc oxide nanorods on zinc-filled porous silicon

    NASA Astrophysics Data System (ADS)

    Yu, Ke; Zhang, Yongsheng; Xu, Rongli; Jiang, Desheng; Luo, Laiqiang; Li, Qiong; Zhu, Ziqiang; Lu, Wei

    2005-01-01

    Single-crystalline zinc oxide (ZnO) nanorods with cuboid morphology have been prepared on the zinc-filled porous silicon substrate using a vapor phase transport method. Field-emission measurements showed that the turn-on field and threshold field of the cuboid ZnO nanorods film were about 3.2 and 8.2 V/μm respectively. From the emitter surface, a homogeneous emission image was observed with emission site density (ESD) of ˜10 4 cm -2. The better emission uniformity and the high ESD may be attributed to a large number of ZnO nanocrystallites as emitter on the surface of the nanorod end contributing to emission.

  10. High throughput growth of zinc oxide nanowires from zinc powder with the assistance of sodium chloride.

    PubMed

    Yang, Jian; Wang, Wenzhong; Ma, Yi; Wang, D Z; Steeves, D; Kimball, B; Ren, Z F

    2006-07-01

    Sodium chloride (NaCl) was found to be very helpful in producing single crystal zinc oxide (ZnO) nanowires in gram quantities. The growth involves heating the mixture of zinc powder and NaCl to 600-700 degrees C in flowing gases of oxygen and argon. A conversion efficiency of 70-80% (Zn to ZnO) was achieved when NaCl was used, and 5-10% without NaCl. The NaCl was completely removed by soaking and rinsing the mixture in water a few times. Photoluminescence spectra using excitation of 325 nm showed a very strong emission only in the visible frequency range, indicating that the surface states dominate the emission.

  11. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, A.D.; Modine, F.A.; Lauf, R.J.; Alim, M.A.; Mahan, G.D.; Bartkowiak, M.

    1998-12-29

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2--4.0% oxide of at least one rare earth element, 0.5--4.0% Co{sub 3}O{sub 4}, 0.05--0.4% K{sub 2}O, 0.05--0.2% Cr{sub 2}O{sub 3}, 0--0.2% CaO, 0.00005--0.01% Al{sub 2}O{sub 3}, 0--2% MnO, 0--0.05% MgO, 0--0.5% TiO{sub 3}, 0--0.2% SnO{sub 2}, 0--0.02% B{sub 2}O{sub 3}, balance ZnO. 4 figs.

  12. Rare earth doped zinc oxide varistors

    DOEpatents

    McMillan, April D.; Modine, Frank A.; Lauf, Robert J.; Alim, Mohammad A.; Mahan, Gerald D.; Bartkowiak, Miroslaw

    1998-01-01

    A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2-4.0% oxide of at least one rare earth element, 0.5-4.0% Co.sub.3 O.sub.4, 0.05-0.4% K.sub.2 O, 0.05-0.2% Cr.sub.2 O.sub.3, 0-0.2% CaO, 0.00005-0.01% Al.sub.2 O.sub.3, 0-2% MnO, 0-0.05% MgO, 0-0.5% TiO.sub.3, 0-0.2% SnO.sub.2, 0-0.02% B.sub.2 O.sub.3, balance ZnO.

  13. Sequestration of Zinc Oxide by Fimbrial Designer Chelators

    PubMed Central

    Kjærgaard, Kristian; Sørensen, Jack K.; Schembri, Mark A.; Klemm, Per

    2000-01-01

    Type 1 fimbriae are surface organelles of Escherichia coli. By engineering a structural component of the fimbriae, FimH, to display a random peptide library, we were able to isolate metal-chelating bacteria. A library consisting of 4 × 107 independent clones was screened for binding to ZnO. Sequences responsible for ZnO adherence were identified, and distinct binding motifs were characterized. The sequences selected exhibited various degrees of affinity and specificity towards ZnO. Competitive binding experiments revealed that the sequences recognized only the oxide form of Zn. Interestingly, one of the inserts exhibited significant homology to a specific sequence in a putative zinc-containing helicase, which suggests that searches such as this one may aid in identifying binding motifs in nature. The zinc-binding bacteria might have a use in detoxification of metal-polluted water. PMID:10618196

  14. Low temperature synthesis of porous copper/zinc oxide

    SciTech Connect

    Podbrscek, Peter; Crnjak Orel, Zorica; Macek, Jadran

    2009-08-05

    A two-step urea aqueous solution process at a low temperature (90 deg. C) was employed for the preparation of a copper/zinc oxide material. Well defined porous spherical particles with average sizes of around 5 {mu}m in diameter were prepared first and then used as a support for further copper-zinc precipitation. It was found that the particle composition and shape were changed with applied stirring speed (100 rpm or 200 rpm) and that particle size is inversely proportional to the copper content in the particles. The particles preserved their size and shape after the heat treatment. Prepared Cu/ZnO samples showed catalytic activity for the reaction of steam reforming of methane. Samples were characterized by scanning field emission electron microscopy, energy dispersive X-ray analyses, X-ray powder diffraction, surface area analyses, and atomic absorption spectroscopy.

  15. A magnetic nanoparticles-zinc oxide/zinc hexacyanoferrate hybrid film for amperometric determination of tyrosine.

    PubMed

    Narang, Jagriti; Chauhan, Nidhi; Pundir, Shikha; Pundir, C S

    2013-11-01

    A method is described for the construction of a highly sensitive amperometric sensor for the detection of tyrosine, employing a magnetic nanoparticles-zinc oxide/zinc hexacyanoferrate (Fe3O4NP-ZnO/ZnHCF) hybrid film electrodeposited on the surface of a Pt electrode as working electrode. The sensor is based on electrocatalytic mechanism initiated by electrochemical oxidation of the reduced form of the hybrid film at +0.2 V vs. Ag/AgCl followed by completion of chemical oxidation of tyrosine. The sensor showed optimum response within 2 s at pH 2. The working/linear range of the sensor was 0.02-2.76 mM with a detection limit of 4 μM. The sensor measured tyrosine level in serum, a potential biomarker of phenylketonuria. The working electrode lost only 5 % of its initial activity, when stored at 4 °C, after its regular use over a period of 100 days.

  16. Zinc

    MedlinePlus

    ... ulcers and promoting weight gain in people with eating disorders such as anorexia nervosa. Some people use zinc ... is abnormal): 25-100 mg zinc. For the eating disorder anorexia nervosa: 100 mg of zinc gluconate daily. ...

  17. Toxicity of zinc oxide nanoparticles on adult male Wistar rats.

    PubMed

    Abbasalipourkabir, Roghayeh; Moradi, Hemen; Zarei, Sadegh; Asadi, Soheila; Salehzadeh, Aref; Ghafourikhosroshahi, Abolfazl; Mortazavi, Motahareh; Ziamajidi, Nasrin

    2015-10-01

    The purpose of this study was to investigate the effects of zinc oxide nanoparticles (nZnO) on adult male Wistar rats. Thirty male Wistar rats divided into five groups of six animals each were used for this study. For ten days, Groups one to four continuously received 50, 100, 150 and 200 mg/kg nZnO, respectively. Group five served as the control group. At the end of the study, the rats were sacrificed and histopathological study of the liver and renal tissue, sperm analysis, serum oxidative stress parameters and some liver enzymes were done. The results of this study showed that nZnO at concentration more than 50 mg/kg lead to significant changes in liver enzymes, oxidative stress, liver and renal tissue and sperm quality and quantity. In conclusion, the toxicity of nZnO is more significant when the concentration is increased; however, the use of low doses requires further investigation.

  18. Properties of gallium arsenide

    SciTech Connect

    Not Available

    1985-01-01

    Properties of Gallium Arsenide' is a handbook of evaluated numeric data and reviewed knowledge distilled by those working at the frontiers of gallium arsenide research. In addition to providing numeric data on basic physical, electronic and optical properties, the book covers many device-related aspects of gallium arsenide. Carrier attributes (ionisation coefficients, concentration, mobility, diffusion etc), deep levels and defects are surveyed and related to the various growth techniques such as MBE, VPE, and MOCVD. Sections on surface structure, oxidation, interfaces and etching are of particular relevance to integrated circuit research. Especially important in the race to achieve commercially usable samples is a state-of-the-art survey on the infra-red imaging of defects in semi-insulating gallium arsenide produced by the liquid-encapsulated Czochralski process.

  19. The zinc ferrite obtained by oxidative precipitation method as a catalyst in n-butanol conversion

    SciTech Connect

    Klimkiewicz, Roman Wolska, Jolanta; Przepiera, Aleksander; Przepiera, Krystyna; Jablonski, Maciej; Lenart, Stanislaw

    2009-01-08

    This paper presents the results of catalytic properties of n-butanol conversion of the zinc ferrite obtained by oxidative precipitation method. The zinc ferrite showed good dehydrogenating activity but also catalyzed consecutive bimolecular condensation of emerged aldehyde particles into symmetrical ketone. The zinc-iron oxide of spinel structure was prepared from ferrous sulfate, which forms as a waste during the titanium dioxide production. The X-ray diffraction methods (XRD, XRF) were used in determining the structure and composition of obtained zinc ferrite, while thermogravimetry (TG-DTG), and differential thermal analysis (DTA) were used in the study of thermal transformations of zinc spinel in air.

  20. Human skin penetration and local effects of topical nano zinc oxide after occlusion and barrier impairment.

    PubMed

    Leite-Silva, V R; Sanchez, W Y; Studier, H; Liu, D C; Mohammed, Y H; Holmes, A M; Ryan, E M; Haridass, I N; Chandrasekaran, N C; Becker, W; Grice, J E; Benson, H A E; Roberts, M S

    2016-07-01

    Public health concerns continue to exist over the safety of zinc oxide nanoparticles that are commonly used in sunscreen formulations. In this work, we assessed the effects of two conditions which may be encountered in everyday sunscreen use, occlusion and a compromised skin barrier, on the penetration and local toxicity of two topically applied zinc oxide nanoparticle products. Caprylic/capric triglyceride (CCT) suspensions of commercially used zinc oxide nanoparticles, either uncoated or with a silane coating, were applied to intact and barrier impaired skin of volunteers, without and with occlusion for a period of six hours. The exposure time was chosen to simulate normal in-use conditions. Multiphoton tomography with fluorescence lifetime imaging was used to noninvasively assess zinc oxide penetration and cellular metabolic changes that could be indicative of toxicity. We found that zinc oxide nanoparticles did not penetrate into the viable epidermis of intact or barrier impaired skin of volunteers, without or with occlusion. We also observed no apparent toxicity in the viable epidermis below the application sites. These findings were validated by ex vivo human skin studies in which zinc penetration was assessed by multiphoton tomography with fluorescence lifetime imaging as well as Zinpyr-1 staining and toxicity was assessed by MTS assays in zinc oxide treated skin cryosections. In conclusion, applications of zinc oxide nanoparticles under occlusive in-use conditions to volunteers are not associated with any measurable zinc oxide penetration into, or local toxicity in the viable epidermis below the application site.

  1. Human skin penetration and local effects of topical nano zinc oxide after occlusion and barrier impairment.

    PubMed

    Leite-Silva, V R; Sanchez, W Y; Studier, H; Liu, D C; Mohammed, Y H; Holmes, A M; Ryan, E M; Haridass, I N; Chandrasekaran, N C; Becker, W; Grice, J E; Benson, H A E; Roberts, M S

    2016-07-01

    Public health concerns continue to exist over the safety of zinc oxide nanoparticles that are commonly used in sunscreen formulations. In this work, we assessed the effects of two conditions which may be encountered in everyday sunscreen use, occlusion and a compromised skin barrier, on the penetration and local toxicity of two topically applied zinc oxide nanoparticle products. Caprylic/capric triglyceride (CCT) suspensions of commercially used zinc oxide nanoparticles, either uncoated or with a silane coating, were applied to intact and barrier impaired skin of volunteers, without and with occlusion for a period of six hours. The exposure time was chosen to simulate normal in-use conditions. Multiphoton tomography with fluorescence lifetime imaging was used to noninvasively assess zinc oxide penetration and cellular metabolic changes that could be indicative of toxicity. We found that zinc oxide nanoparticles did not penetrate into the viable epidermis of intact or barrier impaired skin of volunteers, without or with occlusion. We also observed no apparent toxicity in the viable epidermis below the application sites. These findings were validated by ex vivo human skin studies in which zinc penetration was assessed by multiphoton tomography with fluorescence lifetime imaging as well as Zinpyr-1 staining and toxicity was assessed by MTS assays in zinc oxide treated skin cryosections. In conclusion, applications of zinc oxide nanoparticles under occlusive in-use conditions to volunteers are not associated with any measurable zinc oxide penetration into, or local toxicity in the viable epidermis below the application site. PMID:27131753

  2. Behavior of zinc oxide surge arresters under pollution

    SciTech Connect

    Feser, F.; Kohler, W.; Qiu, D. ); Chrzan, K. )

    1991-04-01

    This paper presents results of pollution tests with AC voltages which were carried out with a multi-unit zinc oxide arrester. The interaction between the polluted porcelain housing and the inner varistor column due to capacitive coupling has been found to be responsible for the temperature rise of varistor elements. The different voltage distribution between inside and outside of the arrester also causes a high radial electric field which can lead to internal discharges if the radial insulation system is not properly designed. These internal discharges may damage varistor elements which are not adequately coated and may cause a total destruction of the arrester.

  3. Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition

    SciTech Connect

    Klochko, N. P. Klepikova, K. S.; Khrypunov, G. S.; Volkova, N. D.; Kopach, V. R.; Lyubov, V. M.; Kirichenko, M. V.; Kopach, A. V.

    2015-02-15

    Conditions for the pulsed electrochemical deposition of nanostructured zinc oxide arrays with a certain morphology, crystal structure, and optical properties from aqueous electrolytes onto substrates of transparent electrically conducting tin dioxide and on single-crystal silicon wafers with built-in homojunctions are studied in order to develop antireflection coatings for solar cells. It is shown that it is possible to obtain single-layer planar antireflection coatings or arrays of nanorods of this material, both having the form of hexagonal prisms and exhibiting the moth-eye effect.

  4. Interfacial mixing during annealing of zinc oxide nanoparticle junctions

    NASA Astrophysics Data System (ADS)

    Hu, Ming; Giapis, Konstantinos P.; Poulikakos, Dimos

    2011-05-01

    The process of forming a junction between crystalline zinc oxide (ZnO) nanoparticles during pulsed thermal annealing in liquid tetradecane is studied using molecular dynamics simulation. Pairs of equal and unequal size particles are considered with emphasis on neck growth and atom mixing. The contact area and interface width of the junction are found to increase with heat pulse power albeit at different rates. The results suggest that it is possible to increase the junction area without significant mixing of atoms across the junction interface by tailoring the heat pulse power.

  5. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  6. Gallium--A smart metal

    USGS Publications Warehouse

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  7. Photodeposition of copper and chromia on gallium oxide: the role of co-catalysts in photocatalytic water splitting.

    PubMed

    Busser, G Wilma; Mei, Bastian; Pougin, Anna; Strunk, Jennifer; Gutkowski, Ramona; Schuhmann, Wolfgang; Willinger, Marc-Georg; Schlögl, Robert; Muhler, Martin

    2014-04-01

    Split second: The photocatalytic activity of gallium oxide (β-Ga2 O3) depends strongly on the co-catalysts CuOx and chromia, which can be efficiently deposited in a stepwise manner by photoreduction of Cu(2+) and CrO4 (2-). The water-splitting activity can be tuned by varying the Cu loading in the range 0.025-1.5 wt %, whereas the Cr loading is not affecting the rate as long as small amounts (such as 0.05 wt %) are present. Chromia is identified as highly efficient co-catalyst in the presence of CuOx : it is essential for the oxidation of water.

  8. Zinc oxide nanowires and nanorods fabricated by vapour-phase transport at low temperature

    NASA Astrophysics Data System (ADS)

    Xu, C. X.; Sun, X. W.; Dong, Z. L.; Yu, M. B.; My, T. D.; Zhang, X. H.; Chua, S. J.; White, T. J.

    2004-07-01

    Using zinc chloride as source material, zinc oxide nanowires and nanorods were fabricated by a vapour-phase transport method at low temperature. The nanowires grown on gold-coated silicon showed a uniform diameter of about 40 nm, and the nanorods on copper-coated silicon grew upwards to form flower-like arrays. The x-ray diffraction and transmission electron microscopy analyses demonstrated that the nanostructural zinc oxide grew along the [0001] direction. The growth process was attributed to a vapour-liquid-solid mechanism. Distinct photoluminescent behaviours were observed for zinc oxide nanostructures grown on gold-coated and copper-coated silicon wafers.

  9. Fabrication of zinc oxide microstructures and their properties

    NASA Astrophysics Data System (ADS)

    Kumari, Latha; Li, Wenzhi; Vannoy, Charles H.; Leblanc, Roger M.; Wang, Dezhi

    2009-03-01

    The bitter-melon-like and prism-like zinc oxide (ZnO) microstructures have been synthesized by hydrothermal route. Besides these microstructures, the ZnO material also consists of spherical nanoparticles with narrow size distribution. The as-synthesized ZnO material depicts hexagonal crystal structure. An optical band gap of 2.95 eV is determined from the UV-vis absorption band edge. The prism-like ZnO microstructure shows an ultraviolet near-band-edge emission at about 3.27 eV (380 nm) at room temperature which can be assigned to the radiative annihilation of excitons. The wide-band gap oxide materials like ZnO with short-wavelength PL emission can find application in light emitting devices.

  10. Electrochemical deposition of zinc oxide nanorods for hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Torres Damasco Ty, Jennifer; Yanagi, Hisao

    2015-04-01

    Zinc oxide (ZnO) nanorod arrays for inorganic/organic hybrid solar cells were electrochemically deposited on indium tin oxide (ITO) substrates with a rotating disk electrode setup. The addition of a ZnO seed layer on the ITO prior to electrochemical deposition improved the morphology of the nanorods, resulting in nanorods with smaller and homogenous diameters as well as a higher degree of vertical orientation on to the substrate. The ZnO films deposited on the seeded ITO substrates had higher optical transmittance and lower concentration of defects. Chronoamperometric transient curves show that nucleation and coalescence occurred later for bare ITO substrates, indicating lower densities of initial nuclei, resulting in the growth of nanorods with larger diameters. The solar cell characteristics of the devices fabricated from the seeded ITO substrates were better. The seed layer also acts as a hole-blocking layer, preventing the direct contact between the hole-transporting polymer material and the ITO.

  11. Design and photocatalytic activity of nanosized zinc oxides

    NASA Astrophysics Data System (ADS)

    Gancheva, M.; Markova-Velichkova, M.; Atanasova, G.; Kovacheva, D.; Uzunov, I.; Cukeva, R.

    2016-04-01

    Zinc oxide particles with various morphologies were successfully prepared via three synthesis methods: precipitation; tribophysical treatment and sonochemistry. The as-synthesized samples were characterized by X-ray diffraction (XRD); infrared spectroscopy (IR); scanning electron microscope (SEM); BET specific surface area; electron-paramagnetic resonance (EPR), UV-Vis absorption/diffuse reflectance and X-ray photoelectron spectroscopy (XPS). Photocatalytic activities of the samples were evaluated by degradation of Malachite Green (MG) in an aqueous solution under UV and visible irradiation. The obtained ZnO powders possess crystallites size below 20 nm. The ZnO with spherical particles were obtained by precipitation method. The sonochemistry approach leads to preparation of ZnO with nanorod particles. The calculated band gaps of various ZnO powders belong to the range from 3.12 to 3.30 eV. The obtained polycrystalline zinc oxides exhibit good photocatalytic activity which is strongly influenced by the preparation conditions. The nanorod ZnO exhibits high photocatalytic activity under UV irradiation which is attributed to the morphology and the geometric surface of the particles. The ZnO obtained by precipitation has better photocatalytic efficiency under visible irradiation due to high B.E.T. specific surface area and the low level of band gap. Tribophysical treatment of a particle size-homogeneous system leads to deterioration of the photocatalytic activity of the material.

  12. Zinc oxide nanoparticles as novel alpha-amylase inhibitors

    NASA Astrophysics Data System (ADS)

    Dhobale, Sandip; Thite, Trupti; Laware, S. L.; Rode, C. V.; Koppikar, Soumya J.; Ghanekar, Ruchika-Kaul; Kale, S. N.

    2008-11-01

    Amylase inhibitors, also known as starch blockers, contain substances that prevent dietary starches from being absorbed by the body via inhibiting breakdown of complex sugars to simpler ones. In this sense, these materials are projected as having potential applications in diabetes control. In this context, we report on zinc oxide nanoparticles as possible alpha-amylase inhibitors. Zinc oxide nanoparticles have been synthesized using soft-chemistry approach and 1-thioglycerol was used as a surfactant to yield polycrystalline nanoparticles of size ˜18 nm, stabilized in wurtzite structure. Conjugation study and structural characterization have been done using x-ray diffraction technique, Fourier transform infrared spectroscopy, UV-visible spectroscopy, and transmission electron microscopy. Cytotoxicity studies on human fibrosarcoma (HT-1080) and skin carcinoma (A-431) cell lines as well as mouse primary fibroblast cells demonstrate that up to a dose of 20 μg/ml, ZnO nanoparticles are nontoxic to the cells. We report for the first time the alpha-amylase inhibitory activity of ZnO nanoparticles wherein an optimum dose of 20 μg/ml was sufficient to exhibit 49% glucose inhibition at neutral pH and 35 °C temperature. This inhibitory activity was similar to that obtained with acarbose (a standard alpha-amylase inhibitor), thereby projecting ZnO nanoparticles as novel alpha-amylase inhibitors.

  13. Growth of zinc oxide nanorods, tetrapods, and nanobelts without catalyst.

    PubMed

    Fouad, O A

    2006-07-01

    Zinc oxide (ZnO) nanostructures with various morphologies have been synthesized without catalyst in a one-step simple redox process. The results show that ZnO nanorods, nanobelts, and tetrapods with hexagonal needled arms could be synthesized via thermal treatment of a mixture of zinc oxide and charcoal powder in a muffle furnace at 1000-1200 degrees C for 240 min. XRD analyses showed that polycrystalline ZnO phase with wurtzite crystal structure was formed. At a relatively low temperature, 1000 degrees C, the ZnO structure was found to be a bundle of denser nanorods. By increasing the reaction temperature to 1100 degrees C, tetrapod-like structures of needle-like arms with pyramidal tips were formed. With the increase of temperature up to 1200 degrees C, the morphology of ZnO nanostructures changed from nanorods and tetrapods to coalescence grains. Reaction temperature was found to be the most important experimental parameter that played an important role in controlling the mode, mechanism of growth, and formation of different ZnO morphologies. PMID:17025131

  14. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

    NASA Astrophysics Data System (ADS)

    Morales, Daniel; Stoute, Nicholas A.; Yu, Zhiyuan; Aspnes, David E.; Dickey, Michael D.

    2016-08-01

    Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ɛ are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

  15. Determining adaptive and adverse oxidative stress responses in human bronical epithelial cells exposed to zinc

    EPA Science Inventory

    Determining adaptive and adverse oxidative stress responses in human bronchial epithelial cells exposed to zincJenna M. Currier1,2, Wan-Yun Cheng1, Rory Conolly1, Brian N. Chorley1Zinc is a ubiquitous contaminant of ambient air that presents an oxidant challenge to the human lung...

  16. Effect of Process Parameters on the Size and Shape of Nano- and Micrometric Zinc Oxide.

    PubMed

    Pulit-Prociak, Jolanta; Banach, Marcin

    2016-01-01

    The paper presents a method of obtaining zinc oxide nano- and microparticles. In these studies microwave reactor and laboratory pressure reactor were used. Since microwave radiation accelerates proceeding of reactions, this way was found to be an effective method in the process of obtaining nanocrystallines of zinc oxide. The size of prepared particles rarely exceeded 500 nm. PMID:27333554

  17. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    NASA Astrophysics Data System (ADS)

    de Melo, Ronaldo P.; Oliveira, Nathalia Talita C.; Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Falcão, Eduardo H. L.; Alves, Severino; da Luz, Leonis L.; Chassagnon, Remi; de Araújo, Cid B.; Sacilotti, Marco

    2016-04-01

    A novel procedure based on a two-step method was developed to obtain β-Ga2O3 nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga2O3 nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga2O3 material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  18. Myeloperoxidase-derived oxidants rapidly oxidize and disrupt zinc-cysteine/histidine clusters in proteins.

    PubMed

    Cook, Naomi L; Pattison, David I; Davies, Michael J

    2012-12-01

    Zinc is an abundant cellular transition metal ion, which binds avidly to protein cysteine (Cys) and histidine (His) residues to form zinc-Cys/His clusters; these play a key role in the function of many proteins (e.g., DNA binding and repair enzymes, transcription factors, nitric oxide synthase). Leukocyte-derived myeloperoxidase generates powerful oxidants including hypochlorous (HOCl), hypobromous (HOBr), and hypothiocyanous (HOSCN) acids from H(2)O(2) and (pseudo)halide ions. Excessive or misplaced formation of these species is associated with cellular dysfunction, apoptosis and necrosis, and multiple inflammatory diseases. HOCl and HOBr react rapidly with sulfur-containing compounds, and HOSCN reacts specifically with thiols. Consequently, we hypothesized that zinc-Cys/His clusters would be targets for these oxidants, and the activity of such enzymes would be perturbed. This hypothesis has been tested using yeast alcohol dehydrogenase (YADH), which contains a well-characterized Zn(1)Cys(2)His(1) cluster. Incubation of YADH with pathologically relevant concentrations of HOSCN, HOCl, and HOBr resulted in rapid oxidation of the protein (rate constants, determined by competition kinetics, for reaction of HOCl and HOSCN with YADH being (3.3±0.9)×10(8) and (2.9±0.4)×10(4) M(-1) s(-1) per YADH monomer, respectively), loss of enzyme activity, Zn(2+) release, changes in protein structure (particularly formation of disulfide cross-links), and oxidation of Cys residues. The loss of enzyme activity correlated with Zn(2+) release, loss of thiols, and changes in protein structure. We conclude that exposure of zinc-Cys/His clusters to inflammatory oxidants can result in impaired protein activity, thiol oxidation, and Zn(2+) release. These reactions may contribute to inflammation-induced tissue damage.

  19. Myeloperoxidase-derived oxidants rapidly oxidize and disrupt zinc-cysteine/histidine clusters in proteins.

    PubMed

    Cook, Naomi L; Pattison, David I; Davies, Michael J

    2012-12-01

    Zinc is an abundant cellular transition metal ion, which binds avidly to protein cysteine (Cys) and histidine (His) residues to form zinc-Cys/His clusters; these play a key role in the function of many proteins (e.g., DNA binding and repair enzymes, transcription factors, nitric oxide synthase). Leukocyte-derived myeloperoxidase generates powerful oxidants including hypochlorous (HOCl), hypobromous (HOBr), and hypothiocyanous (HOSCN) acids from H(2)O(2) and (pseudo)halide ions. Excessive or misplaced formation of these species is associated with cellular dysfunction, apoptosis and necrosis, and multiple inflammatory diseases. HOCl and HOBr react rapidly with sulfur-containing compounds, and HOSCN reacts specifically with thiols. Consequently, we hypothesized that zinc-Cys/His clusters would be targets for these oxidants, and the activity of such enzymes would be perturbed. This hypothesis has been tested using yeast alcohol dehydrogenase (YADH), which contains a well-characterized Zn(1)Cys(2)His(1) cluster. Incubation of YADH with pathologically relevant concentrations of HOSCN, HOCl, and HOBr resulted in rapid oxidation of the protein (rate constants, determined by competition kinetics, for reaction of HOCl and HOSCN with YADH being (3.3±0.9)×10(8) and (2.9±0.4)×10(4) M(-1) s(-1) per YADH monomer, respectively), loss of enzyme activity, Zn(2+) release, changes in protein structure (particularly formation of disulfide cross-links), and oxidation of Cys residues. The loss of enzyme activity correlated with Zn(2+) release, loss of thiols, and changes in protein structure. We conclude that exposure of zinc-Cys/His clusters to inflammatory oxidants can result in impaired protein activity, thiol oxidation, and Zn(2+) release. These reactions may contribute to inflammation-induced tissue damage. PMID:23032100

  20. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering.

    PubMed

    Heo, Young-Woo; Pearton, S J; Norton, D P

    2012-04-01

    We investigated the size-dependent electrical conductivities of indium zinc oxide stripes with different widths from 50 nm to 4 microm and with the same thickness of 50 nm deposited by RF magnetron sputtering. The size of the indium zinc oxide stripes was controlled by e-beam lithography. The distance of the two Ti/Au Ohmic electrodes along the indium zinc oxide stripes was kept constant at 25 microm. The electrical conductivity decreased as the size of the indium zinc oxide stripes decreased below a critical width (80 nm). The activation energy, derived from the electric conductivity versus temperature measurement, was dependent on the dimensions of indium zinc oxide stripes. These results can be understood as stemming from surface charge trapping from the absorption of oxygen and/or water vapor, which leads to an increase in the energy difference between the conduction energy band and the Fermi energy. PMID:22849102

  1. An assessment of zinc oxide nanosheets as a selective adsorbent for cadmium

    PubMed Central

    2013-01-01

    Zinc oxide nanosheet is assessed as a selective adsorbent for the detection and adsorption of cadmium using simple eco-friendly extraction method. Pure zinc oxide nanosheet powders were characterized using field emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The zinc oxide nanosheets were applied to different metal ions, including Cd(II), Cu(II), Hg(II), La(III), Mn(II), Pb(II), Pd(II), and Y(III). Zinc oxide nanosheets were found to be selective for cadmium among these metal ions when determined by inductively coupled plasma-optical emission spectrometry. Moreover, adsorption isotherm data provided that the adsorption process was mainly monolayer on zinc oxide nanosheets. PMID:24011201

  2. Resistance of extremely halophilic archaea to zinc and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Salgaonkar, Bhakti B.; Das, Deepthi; Bragança, Judith Maria

    2016-02-01

    Industrialization as well as other anthropogenic activities have resulted in addition of high loads of metal and/or metal nanoparticles to the environment. In this study, the effect of one of the widely used heavy metal, zinc (Zn) and zinc oxide nanoparticles (ZnO NPs) on extremely halophilic archaea was evaluated. One representative member from four genera namely Halococcus, Haloferax, Halorubrum and Haloarcula of the family Halobacteriaceae was taken as the model organism. All the haloarchaeal genera investigated were resistant to both ZnCl2 and ZnO NPs at varying concentrations. Halococcus strain BK6 and Haloferax strain BBK2 showed the highest resistance in complex/minimal medium of up to 2.0/1.0 mM ZnCl2 and 2.0/1.0-0.5 mM ZnO NP. Accumulation of ZnCl2/ZnO NPs was seen as Haloferax strain BBK2 (287.2/549.6 mg g-1) > Halococcus strain BK6 (165.9/388.5 mg g-1) > Haloarcula strain BS2 (93.2/28.5 mg g-1) > Halorubrum strain BS17 (29.9/16.2 mg g-1). Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM-EDX) analysis revealed that bulk ZnCl2 was sorbed at a higher concentration (21.77 %) on the cell surface of Haloferax strain BBK2 as compared to the ZnO NPs (14.89 %).

  3. Zinc oxide and related compounds: order within the disorder

    NASA Astrophysics Data System (ADS)

    Martins, R.; Pereira, Luisa; Barquinha, P.; Ferreira, I.; Prabakaran, R.; Goncalves, G.; Goncalves, A.; Fortunato, E.

    2009-02-01

    This paper discusses the effect of order and disorder on the electrical and optical performance of ionic oxide semiconductors based on zinc oxide. These materials are used as active thin films in electronic devices such as pn heterojunction solar cells and thin-film transistors. Considering the expected conduction mechanism in ordered and disordered semiconductors the role of the spherical symmetry of the s electron conduction bands will be analyzed and compared to covalent semiconductors. The obtained results show p-type c-Si/a-IZO/poly-ZGO solar cells exhibiting efficiencies above 14%, in device areas of about 2.34 cm2. Amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance than the polycrystalline TFTs based on ZnO, translated by ION/IOFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2/Vs. Apart from that, preliminary data on p-type oxide TFT based on the Zn-Cu-O system will also be presented.

  4. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    SciTech Connect

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan E-mail: drlife@kookmin.ac.kr; Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du E-mail: drlife@kookmin.ac.kr; Kim, Yong-Sung

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  5. Zinc oxide nanoparticles induce eosinophilic airway inflammation in mice.

    PubMed

    Huang, Kuo-Liang; Lee, Yi-Hsin; Chen, Hau-Inh; Liao, Huang-Shen; Chiang, Bor-Luen; Cheng, Tsun-Jen

    2015-10-30

    Zinc oxide nanoparticles (ZnO NPs) have been widely used in industry. The metal composition of PM2.5 might contribute to the higher prevalence of asthma. To investigate the effects of ZnO NPs on allergic airway inflammation, mice were first exposed to different concentrations of ZnO NPs (0.1 mg/kg, 0.5 mg/kg) or to a combination of ZnO NPs and chicken egg ovalbumin (OVA) by oropharyngeal aspiration on day 0 and day 7 and then were sacrificed 5 days later. The subsequent time course of airway inflammation in the mice after ZnO NPs exposure was evaluated on days 1, 7, and 14. To further determine the role of zinc ions, ZnCl2 was also administered. The inflammatory cell count, cytokine levels in the bronchoalveolar lavage fluid (BALF), and lung histopathology were examined. We found significant neutrophilia after exposure to high-dose ZnO NPs on day 1 and significant eosinophilia in the BALF at 7 days. However, the expression levels of the T helper 2 (Th2) cytokines IL-4, IL-5, and IL-13 increased significantly after 24h of exposure to only ZnO NPs and then decreased gradually. These results suggested that ZnO NPs could cause eosinophilic airway inflammation in the absence of allergens.

  6. a Comprehensive DFT Study of Zinc Oxide in Different Phases

    NASA Astrophysics Data System (ADS)

    Ul Haq, Bakhtiar; Afaq, A.; Ahmed, R.; Naseem, S.

    2012-06-01

    A density functional study for structural and electronic properties of Zinc Oxide (ZnO), in wurtzite, rock salt and zinc-blende phases has been performed using full potential-linearized augmented plane wave/linearized augmented plane wave plus local ideal orbital (FP-LAPW/L(APW+lo) approach as realized in WIEN2k code. To approximate exchange correlation energy and corresponding potential, a special GGA parameterized by Wu-Cohen has been implemented. Our results of lattice constants, bulk moduli as well as for internal parameter with GGA-WC are found to be more reliable. This study reveals that value of internal parameter decreases with increasing volume whereas computed electronic band structure confirms the direct band gap behavior of ZnO in B4 and B3 phases while indirect band gap behavior in B1 phase. Moreover, two fold degeneracy at the maxima of valence band for B4 and B1 phases whereas three fold for B3 is observed. A detailed comparison with experimental and other first principles studies is also made.

  7. Phase Tuning of Nanostructured Gallium Oxide via Hybridization with Reduced Graphene Oxide for Superior Anode Performance in Li-Ion Battery: An Experimental and Theoretical Study.

    PubMed

    Patil, Sharad B; Kim, In Young; Gunjakar, Jayavant L; Oh, Seung Mi; Eom, Taedaehyeong; Kim, Hyungjun; Hwang, Seong-Ju

    2015-08-26

    The crystal phase of nanostructured metal oxide can be effectively controlled by the hybridization of gallium oxide with reduced graphene oxide (rGO) at variable concentrations. The change of the ratio of Ga2O3/rGO is quite effective in tailoring the crystal structure and morphology of nanostructured gallium oxide hybridized with rGO. This is the first example of the phase control of metal oxide through a change of the content of rGO hybridized. The calculations based on density functional theory (DFT) clearly demonstrate that the different surface formation energy and Ga local symmetry of Ga2O3 phases are responsible for the phase transition induced by the change of rGO content. The resulting Ga2O3-rGO nanocomposites show promising electrode performance for lithium ion batteries. The intermediate Li-Ga alloy phases formed during the electrochemical cycling are identified with the DFT calculations. Among the present Ga2O3-rGO nanocomposites, the material with mixed α-Ga2O3/β-Ga2O3/γ-Ga2O3 phase can deliver the largest discharge capacity with the best cyclability and rate characteristics, highlighting the importance of the control of Ga2O3/rGO ratio in optimizing the electrode activity of the composite materials. The present study underscores the usefulness of the phase-control of nanostructured metal oxides achieved by the change of rGO content in exploring novel functional nanocomposite materials. PMID:26258574

  8. Phase Tuning of Nanostructured Gallium Oxide via Hybridization with Reduced Graphene Oxide for Superior Anode Performance in Li-Ion Battery: An Experimental and Theoretical Study.

    PubMed

    Patil, Sharad B; Kim, In Young; Gunjakar, Jayavant L; Oh, Seung Mi; Eom, Taedaehyeong; Kim, Hyungjun; Hwang, Seong-Ju

    2015-08-26

    The crystal phase of nanostructured metal oxide can be effectively controlled by the hybridization of gallium oxide with reduced graphene oxide (rGO) at variable concentrations. The change of the ratio of Ga2O3/rGO is quite effective in tailoring the crystal structure and morphology of nanostructured gallium oxide hybridized with rGO. This is the first example of the phase control of metal oxide through a change of the content of rGO hybridized. The calculations based on density functional theory (DFT) clearly demonstrate that the different surface formation energy and Ga local symmetry of Ga2O3 phases are responsible for the phase transition induced by the change of rGO content. The resulting Ga2O3-rGO nanocomposites show promising electrode performance for lithium ion batteries. The intermediate Li-Ga alloy phases formed during the electrochemical cycling are identified with the DFT calculations. Among the present Ga2O3-rGO nanocomposites, the material with mixed α-Ga2O3/β-Ga2O3/γ-Ga2O3 phase can deliver the largest discharge capacity with the best cyclability and rate characteristics, highlighting the importance of the control of Ga2O3/rGO ratio in optimizing the electrode activity of the composite materials. The present study underscores the usefulness of the phase-control of nanostructured metal oxides achieved by the change of rGO content in exploring novel functional nanocomposite materials.

  9. The zinc electrode - Its behaviour in the nickel oxide-zinc accumulator

    NASA Astrophysics Data System (ADS)

    Certain aspects of zinc electrode reaction and behavior are investigated in view of their application to batteries. The properties of the zinc electrode in a battery system are discussed, emphasizing porous structure. Shape change is emphasized as the most important factor leading to limited battery cycle life. It is shown that two existing models of shape change based on electroosmosis and current distribution are unable to consistently describe observed phenomena. The first stages of electrocrystallization are studied and the surface reactions between the silver substrate and the deposited zinc layer are investigated. The reaction mechanism of zinc and amalgamated zinc in an alkaline electrolyte is addressed, and the batter system is studied to obtain information on cycling behavior and on the shape change phenomenon. The effect on cycle behavior of diferent amalgamation techniques of the zinc electrode and several additives is addressed. Impedance measurements on zinc electrodes are considered, and battery behavior is correlated with changes in the zinc electrode during cycling.

  10. Structure-dependent mechanical properties of ultrathin zinc oxide nanowires

    PubMed Central

    2011-01-01

    Mechanical properties of ultrathin zinc oxide (ZnO) nanowires of about 0.7-1.1 nm width and in the unbuckled wurtzite (WZ) phase have been carried out by molecular dynamics simulation. As the width of the nanowire decreases, Young's modulus, stress-strain behavior, and yielding stress all increase. In addition, the yielding strength and Young's modulus of Type III are much lower than the other two types, because Type I and II have prominent edges on the cross-section of the nanowire. Due to the flexibility of the Zn-O bond, the phase transformation from an unbuckled WZ phase to a buckled WZ is observed under the tensile process, and this behavior is reversible. Moreover, one- and two-atom-wide chains can be observed before the ZnO nanowires rupture. These results indicate that the ultrathin nanowire possesses very high malleability. PMID:21711876

  11. Interpretation of optical conductivity of zinc oxide nanowires

    SciTech Connect

    Choudhary, K. K.; Kaurav, N.

    2015-07-31

    The frequency dependent optical response of Zinc Oxide (ZnO) nanowires is theoretically analyzed within the two component schemes: one is the motion of coherent Drude electrons within the ZnO nanowire and the other is incoherent motion of electrons from one nanowire to other. The model has only one free parameter, the relaxation rate. The frequency dependent relaxation rates are expressed in terms of memory functions. The coherent Drude carriers form a sharp peak at zero frequency and a long tail at higher frequencies, i.e. in the infrared region. However, the hopping of carriers from one nanowire to other (incoherent motion of electrons) yields a peak value in the optical conductivity around mid infrared region. It is found that both the Drude and hopping carriers will contribute to the optical process of conduction in ZnO nanowire.

  12. Nanosized zinc oxide particles induce neural stem cell apoptosis

    NASA Astrophysics Data System (ADS)

    Deng, Xiaoyong; Luan, Qixia; Chen, Wenting; Wang, Yanli; Wu, Minghong; Zhang, Haijiao; Jiao, Zheng

    2009-03-01

    Given the intensive application of nanoscale zinc oxide (ZnO) materials in our life, growing concerns have arisen about its unintentional health and environmental impacts. In this study, the neurotoxicity of different sized ZnO nanoparticles in mouse neural stem cells (NSCs) was investigated. A cell viability assay indicated that ZnO nanoparticles manifested dose-dependent, but no size-dependent toxic effects on NSCs. Apoptotic cells were observed and analyzed by confocal microscopy, transmission electron microscopy examination, and flow cytometry. All the results support the viewpoint that the ZnO nanoparticle toxicity comes from the dissolved Zn2+ in the culture medium or inside cells. Our results highlight the need for caution during the use and disposal of ZnO manufactured nanomaterials to prevent the unintended environmental and health impacts.

  13. Gold coated zinc oxide nanonecklaces as a SERS substrate.

    PubMed

    He, Lili; Shi, Jian; Sun, Xin; Lin, Mengshi; Yu, Ping; Li, Hao

    2011-04-01

    Faceted zinc oxide nanonecklace (ZnO NN) arrays were grown on r-plane sapphires along one direction (ZnO [0001] II sapphire [10-11] and ZnO (-12-10) II sapphire (01-12)) using chemical vapor deposition. After coated with 45 nm gold films and annealed at 250 degrees C for 30 seconds, the coated ZnO NNs exhibit satisfactory and stable surface enhanced Raman scattering (SERS) effects when tested with melamine and other chemicals. The limit of detection of melamine is 10(-5) mol/L and the analytical enhancement factor is 10(4), which is competitive to a commercial substrate. This study indicates that gold coated ZnO NN substrates have a great potential as SERS-active substrates in rapid detection of trace amount food contaminants such as melamine and other chemicals. PMID:21776731

  14. Gas sensing performance of nano zinc oxide sensors

    NASA Astrophysics Data System (ADS)

    Sharma, Shiva; Chauhan, Pratima

    2016-04-01

    We report nano Zinc Oxide (ZnO) synthesized by sol-gel method possessing the crystallite size which varies from 25.17 nm to 47.27 nm. The Scanning electron microscope (SEM) image confirms the uniform distribution of nanograins with high porosity. The Energy dispersion X-ray (EDAX) spectrum gives the atomic composition of Zn and O in ZnO powders and confirms the formation of nano ZnO particles. These factors reveals that Nano ZnO based gas sensors are highly sensitive to Ammonia gas (NH3) at room temperature, indicating the maximum response 86.8% at 800 ppm with fast response time and recovery time of 36 sec and 23 sec respectively.

  15. Functionalization of textiles with silver and zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Pulit-Prociak, Jolanta; Chwastowski, Jarosław; Kucharski, Arkadiusz; Banach, Marcin

    2016-11-01

    The paper presents a method for functionalization of textile materials using fabric dyes modified with silver or zinc oxide nanoparticles. Embedding of these nanoparticles into the structure of other materials makes that the final product is characterized by antimicrobial properties. Indigo and commercially available dye were involved in studies. It is worth to note that silver nanoparticles were obtained in-situ in the reaction of preparing indigo dye and in the process of preparing commercial dye baths. Such a method allows reducing technological steps. The modified dyes were used for dyeing of cotton fibers. The antimicrobial properties of final textile materials were studied. Saccharomyces cerevisiae strain was used in microbiological test. The results confirmed biocidal activity of prepared materials.

  16. Green Approach for Fabrication and Applications of Zinc Oxide Nanoparticles

    PubMed Central

    Smita, Kumari; Cumbal, Luis

    2014-01-01

    Zinc oxide nanoparticles (ZnO-NPs) are known to be one of the multifunctional inorganic compounds which are widely used in everyday applications. This study aims to fabricate ZnO-NPs using grapefruit (Citrus paradisi) peel extract with particle size ranging from 12 to 72 nm. Structural, morphological, and optical properties of the synthesized nanoparticles have been characterized by using UV-Vis spectrophotometer, TEM, DLS, and FTIR analysis. They show the significant photocatalytic degradation efficiency (>56%, 10 mg/L, 6 h) against methylene blue and antioxidant efficacy (≥80% for 1.2 mM) against 1,1-diphenyl-2-picrylhydrazyl. From the results obtained it is suggested that green ZnO-NPs could be used effectively in environmental safety applications and also can address future medical concerns. PMID:25374484

  17. Gold coated zinc oxide nanonecklaces as a SERS substrate.

    PubMed

    He, Lili; Shi, Jian; Sun, Xin; Lin, Mengshi; Yu, Ping; Li, Hao

    2011-04-01

    Faceted zinc oxide nanonecklace (ZnO NN) arrays were grown on r-plane sapphires along one direction (ZnO [0001] II sapphire [10-11] and ZnO (-12-10) II sapphire (01-12)) using chemical vapor deposition. After coated with 45 nm gold films and annealed at 250 degrees C for 30 seconds, the coated ZnO NNs exhibit satisfactory and stable surface enhanced Raman scattering (SERS) effects when tested with melamine and other chemicals. The limit of detection of melamine is 10(-5) mol/L and the analytical enhancement factor is 10(4), which is competitive to a commercial substrate. This study indicates that gold coated ZnO NN substrates have a great potential as SERS-active substrates in rapid detection of trace amount food contaminants such as melamine and other chemicals.

  18. Zinc oxide- and polymer-based composite varistors

    NASA Astrophysics Data System (ADS)

    Hashimov, A. M.; Hasanli, Sh. M.; Mehtizadeh, R. N.; Bayramov, Kh. B.; Azizova, Sh. M.

    2006-09-01

    This work reports on homogeneous varistor ceramics prepared from a mixture of impurity-doped zinc oxide (C) [E. Suzuki et al., IEEE Trans. Electron Dev. 47, 354 (2000); F.L. Souza et al., Mater. Chem. Phys. 80, 512 (2003)] and nonpolar polyethylene (PE) using a hot pressing method. The content of the composite components was varied from 10% (90%) to 70% (30%) of C (PE) and the thickness of the samples obtained was 40 or 150 m. The voltage-current characteristics and electroconductivity with applied voltage were measured for all the samples obtained at room temperature. Also, the same samples were tested using infrared absorption and X-ray diffraction methods. As a result of these studies, the influence of ceramic composition on the ceramic parameters was established.

  19. Adsorption of isopropanol and cyclohexane on zinc oxide

    NASA Astrophysics Data System (ADS)

    Bratchikova, I. G.; Pylinina, A. I.; Platonov, E. A.; Danilova, M. N.; Isaeva, N. Yu.; Yagodovskii, V. D.

    2015-01-01

    Adsorption isotherms of isopropanol and cyclohexane are obtained in the range of 234-303 K on an initial surface of zinc oxide and after its treatment with glow-discharge plasma in O2 and high-frequency plasma in Ar. The values of isosteric heat and adsorption entropy are shown to be only slightly affected by these treatments. It is found that the acidity of the surface increases by 38 and 97%, respectively, and the acidic sites are not adsorption sites for either adsorbate. At low degrees of occupation, the adsorption isotherms of (CH3)2CHOH are described by an equation of induced adsorption whose parameters are dependent on the plasma-chemical treatments. It is concluded that adsorbed isopropanol particles exist in positively and negatively charged forms. The adsorption of cyclohexane is described by the Hill-de Boer equation for the initial ZnO surface, and by the Langmuir equation after plasma-chemical treatments.

  20. Zinc as a micronutrient and its preventive role of oxidative damage in cells.

    PubMed

    Kloubert, Veronika; Rink, Lothar

    2015-10-01

    Zinc is an essential trace element with special importance in the immune system. Deficiencies of zinc are seen in the course of ageing and in various diseases, such as diabetes mellitus or rheumathoid arthritis. The trace element is essential for a variety of basic cellular functions and especially important for various enzymes participating in the production and neutralization of reactive oxygen species (ROS) which are normally produced by the cell. Under normal conditions ROS are neutralized and are not able to harm the cell, but in case of ROS elevation, oxidative damage within the cell is the result. Interestingly, zinc deficiency is directly associated with oxidative stress. Thus, control and regulation of the intracellular zinc content is essential with participation of various transporter and zinc-binding proteins, such as metallothionein. Oxidative stress is mainly caused by elevated ROS production and a decrease of antioxidant mechanisms. Zinc partly functions as an antioxidant although it is redox inert. Zinc supplementation is associated with decreased ROS formation exhibiting beneficial effects especially in ageing and diabetes mellitus. This review summarizes current findings concerning zinc as a micronutrient and its actions as a pro-antioxidant, and the association between zinc and oxidative stress under various conditions is highlighted. PMID:26286461

  1. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  2. Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

    SciTech Connect

    Thakur, Bikash; Sambandan, Sanjiv; Lee, Sungsik; Nathan, Arokia; Ahnood, Arman; Jeon, Sanghun

    2014-05-19

    Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔE{sub t}≈ 0.3 eV and with a density of state distribution as D{sub t}(E{sub t−j})=D{sub t0}exp(−ΔE{sub t}/kT)with D{sub t0} = 5.02 × 10{sup 11} cm{sup −2} eV{sup −1}. Such a model is useful for developing simulation tools for circuit design.

  3. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  4. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    PubMed Central

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-01-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully. PMID:27725695

  5. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

    NASA Astrophysics Data System (ADS)

    Lan-Feng, Tang; Hai, Lu; Fang-Fang, Ren; Dong, Zhou; Rong, Zhang; You-Dou, Zheng; Xiao-Ming, Huang

    2016-03-01

    Not Available Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities under Grant No 021014380033.

  6. Zinc oxide tetrapods as efficient photocatalysts for organic pollutant degradation

    NASA Astrophysics Data System (ADS)

    Liu, Fangzhou; Leung, Yu Hang; Djurisić, Aleksandra B.; Liao, Changzhong; Shih, Kaimin

    2014-03-01

    Bisphenol A (BPA) and other organic pollutants from industrial wastewater have drawn increasing concern in the past decades regarding their environmental and biological risks, and hence developing strategies of effective degradation of BPA and other organic pollutants is imperative. Metal oxide nanostructures, in particular titanium oxide (TiO2) and zinc oxide (ZnO), have been demonstrated to exhibit efficient photodegradation of various common organic dyes. ZnO tetrapods are of special interest due to their low density of native defects which consequently lead to lower recombination losses and higher photocatalytic efficiency. Tetrapods can be obtained by relatively simple and low-cost vapor phase deposition in large quantity; the micron-scale size would also be advantageous for catalyst recovery. In this study, the photodegradation of BPA with ZnO tetrapods and TiO2 nanostructures under UV illumination were compared. The concentration of BPA dissolved in DI water was analyzed by high-performance liquid chromatography (HPLC) at specified time intervals. It was observed that the photocatalytic efficiency of ZnO tetrapods eventually surpassed Degussa P25 in free-standing form, and more than 80% of BPA was degraded after 60 min. Photodegradation of other organic dye pollutants by tetrapods and P25 were also examined. The superior photocatalytic efficiency of ZnO tetrapods for degradation of BPA and other organic dye pollutants and its correlation with the material properties were discussed.

  7. Prenatal development toxicity study of zinc oxide nanoparticles in rats

    PubMed Central

    Hong, Jeong-Sup; Park, Myeong-Kyu; Kim, Min-Seok; Lim, Jeong-Hyeon; Park, Gil-Jong; Maeng, Eun-Ho; Shin, Jae-Ho; Kim, Meyoung-Kon; Jeong, Jayoung; Park, Jin-A; Kim, Jong-Choon; Shin, Ho-Chul

    2014-01-01

    This study investigated the potential adverse effects of zinc oxide nanoparticles ([ZnOSM20(+) NPs] zinc oxide nanoparticles, positively charged, 20 nm) on pregnant dams and embryo–fetal development after maternal exposure over the period of gestational days 5–19 with Sprague-Dawley rats. ZnOSM20(+) NPs were administered to pregnant rats by gavage at 0, 100, 200, and 400 mg/kg/day. All dams were subjected to a cesarean section on gestational day 20, and all of the fetuses were examined for external, visceral, and skeletal alterations. Toxicity in the dams manifested as significantly decreased body weight after administration of 400 mg/kg/day NPs; reduced food consumption after administration of 200 and 400 mg/kg/day NPs; and decreased liver weight and increased adrenal glands weight after administration of 400 mg/kg/day NPs. However, no treatment-related difference in: number of corpora lutea; number of implantation sites; implantation rate (%); resorption; dead fetuses; litter size; fetal deaths and placental weights; and sex ratio were observed between the groups. On the other hand, significant decreases between treatment groups and controls were seen for fetal weights after administration of 400 mg/kg/day NPs. Morphological examinations of the fetuses demonstrated significant differences in incidences of abnormalities in the group administered 400mg/kg/day. Meanwhile, no significant difference was found in the Zn content of fetal tissue between the control and high-dose groups. These results showed that oral doses for the study with 15-days repeated of ZnOSM20(+) NPs were maternotoxic in the 200 mg/kg/day group, and embryotoxic in the 400 mg/kg/day group. PMID:25565834

  8. Prenatal development toxicity study of zinc oxide nanoparticles in rats.

    PubMed

    Hong, Jeong-Sup; Park, Myeong-Kyu; Kim, Min-Seok; Lim, Jeong-Hyeon; Park, Gil-Jong; Maeng, Eun-Ho; Shin, Jae-Ho; Kim, Meyoung-Kon; Jeong, Jayoung; Park, Jin-A; Kim, Jong-Choon; Shin, Ho-Chul

    2014-01-01

    This study investigated the potential adverse effects of zinc oxide nanoparticles ([ZnO(SM20(+)) NPs] zinc oxide nanoparticles, positively charged, 20 nm) on pregnant dams and embryo-fetal development after maternal exposure over the period of gestational days 5-19 with Sprague-Dawley rats. ZnO(SM20(+)) NPs were administered to pregnant rats by gavage at 0, 100, 200, and 400 mg/kg/day. All dams were subjected to a cesarean section on gestational day 20, and all of the fetuses were examined for external, visceral, and skeletal alterations. Toxicity in the dams manifested as significantly decreased body weight after administration of 400 mg/kg/day NPs; reduced food consumption after administration of 200 and 400 mg/kg/day NPs; and decreased liver weight and increased adrenal glands weight after administration of 400 mg/kg/day NPs. However, no treatment-related difference in: number of corpora lutea; number of implantation sites; implantation rate (%); resorption; dead fetuses; litter size; fetal deaths and placental weights; and sex ratio were observed between the groups. On the other hand, significant decreases between treatment groups and controls were seen for fetal weights after administration of 400 mg/kg/day NPs. Morphological examinations of the fetuses demonstrated significant differences in incidences of abnormalities in the group administered 400mg/kg/day. Meanwhile, no significant difference was found in the Zn content of fetal tissue between the control and high-dose groups. These results showed that oral doses for the study with 15-days repeated of ZnO(SM20(+)) NPs were maternotoxic in the 200 mg/kg/day group, and embryotoxic in the 400 mg/kg/day group. PMID:25565834

  9. Potential effects of gallium on cladding materials

    SciTech Connect

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  10. Comparative effects of zinc oxide nanoparticles and dissolved zinc on zebrafish embryos and eleuthero-embryos: importance of zinc ions.

    PubMed

    Brun, Nadja Rebecca; Lenz, Markus; Wehrli, Bernhard; Fent, Karl

    2014-04-01

    The increasing use of zinc oxide nanoparticles (nZnO) and their associated environmental occurrence make it necessary to assess their potential effects on aquatic organisms. Upon water contact, nZnO dissolve partially to zinc (Zn(II)). To date it is not yet completely understood, whether effects of nZnO are solely or partly due to dissolved Zn(II). Here we compare potential effects of 0.2, 1 and 5mg/L nZnO and corresponding concentrations of released Zn(II) by water soluble ZnCl2 to two development stages of zebrafish, embryos and eleuthero-embryos, by analysing expressional changes by RT-qPCR. Another objective was to assess uptake and tissue distribution of Zn(II). Laser ablation-ICP-MS analysis demonstrated that uptake and tissue distribution of Zn(II) were identical for nZnO and ZnCl2 in eleuthero-embryos. Zn(II) was found particularly in the retina/pigment layer of eyes and brain. Both nZnO and dissolved Zn(II) derived from ZnCl2 had similar inhibiting effects on hatching, and they induced similar expressional changes of target genes. At 72hours post fertilization (hpf), both nZnO and Zn(II) delayed hatching at all doses, and inhibited hatching at 1 and 5 mg/L at 96 hpf. Both nZnO and Zn(II) lead to induction of metallothionein (mt2) in both embryos and eleuthero-embryos at all concentrations. Transcripts of oxidative stress related genes cat and Cu/Zn sod were also altered. Moreover, we show for the first time that nZnO exposure results in transcriptional changes of pro-inflammatory cytokines IL-1β and TNFα. Overall, transcriptional alterations were higher in embryos than eleuthero-embryos. The similarities of the effects lead to the conclusion that effects of nZnO are mainly related to the release of Zn(II).

  11. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    NASA Astrophysics Data System (ADS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-09-01

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  12. Effect of morphology and solvent on two-photon absorption of nano zinc oxide

    SciTech Connect

    Kavitha, M.K.; Haripadmam, P.C.; Gopinath, Pramod; Krishnan, Bindu; John, Honey

    2013-05-15

    Highlights: ► ZnO nanospheres and triangular structures synthesis by novel precipitation technique. ► The effect of precursor concentration on the size and shape of nano ZnO. ► Open aperture Z-scan measurements of the ZnO nanoparticle dispersions. ► Nanospheres exhibit higher two photon absorption coefficient than triangular nanostructures. ► Nanospheres dispersed in water exhibit higher two photon absorption coefficient than its dispersion in 2-propanol. - Abstract: In this paper, we report the effect of morphology and solvent on the two-photon absorption of nano zinc oxide. Zinc oxide nanoparticles in two different morphologies like nanospheres and triangular nanostructures are synthesized by novel precipitation technique and their two-photon absorption coefficient is measured using open aperture Z-scan technique. Experimental results show that the zinc oxide nanospheres exhibit higher two-photon absorption coefficient than the zinc oxide triangular nanostructures. The zinc oxide nanospheres dispersed in water exhibit higher two-photon absorption coefficient than that of its dispersion in 2-propanol. The zinc oxide nanospheres dispersed in water shows a decrease in two-photon absorption coefficient with an increase in on-axis irradiance. The result confirms the dependence of shape and solvent on the two-photon absorption of nano zinc oxide.

  13. Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen

    2016-01-01

    In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm2 V-1 s-1 and 2.8×1017 cm-3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274-0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.

  14. Texture and topography analysis of doxycycline hyclate thermosensitive systems comprising zinc oxide.

    PubMed

    Phaechamud, T; Mahadlek, J; Charoenteeraboon, J

    2013-07-01

    To characterize the thermal behavior and texture analysis of doxycycline hyclate thermosensitive gels developed for periodontitis treatment containing zinc oxide prepared by using poloxamer (Lutrol(®) F127) as polymeric material and N-methyl pyrrolidone was used as cosolvent. The thermosensitive gel comprising doxycycline hyclate, Lutrol(®) F127, and N-methyl pyrrolidone were characterized for the thermal behavior and texture analysis. The topography of the system after the dissolution test was characterized with scanning electron microscope. Differential scanning calorimetric thermogram exhibited the endothermic peaks in the systems containing high amount of N-methyl pyrrolidone in solvent. The sol-gel transition temperature of the systems decreased as the zinc oxide amount was increased. The addition of doxycycline hyclate, zinc oxide, and N-methyl pyrrolidone affected the syringeability of systems. The addition of zinc oxide into the doxycycline hyclate-Lutrol(®) F127 systems decreased the diameter of inhibition zone against Staphylococcus aureus, Escherichia coli, and Candida albicans since zinc oxide decreased the diffusion and prolonged release of doxycycline hyclate. From scanning electron microscope analysis, the porous surface of 20% w/w Lutrol(®) F127 system was notably different from that of gel comprising doxycycline hyclate which had interconnected pores and smooth surfaces. The number of pores was decreased with increasing zinc oxide and the porous structure was smaller and more compact. Therefore, the addition of zinc oxide could increase the syringeability of doxycycline hyclate-Lutrol(®) F127 system with the temperature dependence. Zinc oxide decreased inhibition zone against test microbes because of prolongation of doxycycline hyclate release and reduced size of continuous cells. Furthermore, zinc oxide also increased the compactness of wall surfaces of Lutrol(®) F127.

  15. Texture and Topography Analysis of Doxycycline Hyclate Thermosensitive Systems Comprising Zinc Oxide

    PubMed Central

    Phaechamud, T.; Mahadlek, J.; Charoenteeraboon, J.

    2013-01-01

    To characterize the thermal behavior and texture analysis of doxycycline hyclate thermosensitive gels developed for periodontitis treatment containing zinc oxide prepared by using poloxamer (Lutrol® F127) as polymeric material and N-methyl pyrrolidone was used as cosolvent. The thermosensitive gel comprising doxycycline hyclate, Lutrol® F127, and N-methyl pyrrolidone were characterized for the thermal behavior and texture analysis. The topography of the system after the dissolution test was characterized with scanning electron microscope. Differential scanning calorimetric thermogram exhibited the endothermic peaks in the systems containing high amount of N-methyl pyrrolidone in solvent. The sol-gel transition temperature of the systems decreased as the zinc oxide amount was increased. The addition of doxycycline hyclate, zinc oxide, and N-methyl pyrrolidone affected the syringeability of systems. The addition of zinc oxide into the doxycycline hyclate-Lutrol® F127 systems decreased the diameter of inhibition zone against Staphylococcus aureus, Escherichia coli, and Candida albicans since zinc oxide decreased the diffusion and prolonged release of doxycycline hyclate. From scanning electron microscope analysis, the porous surface of 20% w/w Lutrol® F127 system was notably different from that of gel comprising doxycycline hyclate which had interconnected pores and smooth surfaces. The number of pores was decreased with increasing zinc oxide and the porous structure was smaller and more compact. Therefore, the addition of zinc oxide could increase the syringeability of doxycycline hyclate-Lutrol® F127 system with the temperature dependence. Zinc oxide decreased inhibition zone against test microbes because of prolongation of doxycycline hyclate release and reduced size of continuous cells. Furthermore, zinc oxide also increased the compactness of wall surfaces of Lutrol® F127. PMID:24302791

  16. Physiologically based pharmacokinetic modeling of zinc oxide nanoparticles and zinc nitrate in mice.

    PubMed

    Chen, Wei-Yu; Cheng, Yi-Hsien; Hsieh, Nan-Hung; Wu, Bo-Chun; Chou, Wei-Chun; Ho, Chia-Chi; Chen, Jen-Kun; Liao, Chung-Min; Lin, Pinpin

    2015-01-01

    Zinc oxide nanoparticles (ZnO NPs) have been widely used in consumer products, therapeutic agents, and drug delivery systems. However, the fate and behavior of ZnO NPs in living organisms are not well described. The purpose of this study was to develop a physiologically based pharmacokinetic model to describe the dynamic interactions of (65)ZnO NPs in mice. We estimated key physicochemical parameters of partition coefficients and excretion or elimination rates, based on our previously published data quantifying the biodistributions of 10 nm and 71 nm (65)ZnO NPs and zinc nitrate ((65)Zn(NO3)2) in various mice tissues. The time-dependent partition coefficients and excretion or elimination rates were used to construct our physiologically based pharmacokinetic model. In general, tissue partition coefficients of (65)ZnO NPs were greater than those of (65)Zn(NO3)2, particularly the lung partition coefficient of 10 nm (65)ZnO NPs. Sensitivity analysis revealed that 71 nm (65)ZnO NPs and (65)Zn(NO3)2 were sensitive to excretion and elimination rates in the liver and gastrointestinal tract. Although the partition coefficient of the brain was relative low, it increased time-dependently for (65)ZnO NPs and (65)Zn(NO3)2. The simulation of (65)Zn(NO3)2 was well fitted with the experimental data. However, replacing partition coefficients of (65)ZnO NPs with those of (65)Zn(NO3)2 after day 7 greatly improved the fitness of simulation, suggesting that ZnO NPs might decompose to zinc ion after day 7. In this study, we successfully established a potentially predictive dynamic model for slowly decomposed NPs. More caution is suggested for exposure to (65)ZnO NPs <10 nm because those small (65)ZnO NPs tend to accumulate in the body for a relatively longer time than 71 nm (65)ZnO NPs and (65)Zn(NO3)2 do. PMID:26491297

  17. An Electrochemical Glucose Sensor Based on Zinc Oxide Nanorods.

    PubMed

    Marie, Mohammed; Mandal, Sanghamitra; Manasreh, Omar

    2015-01-01

    A glucose electrochemical sensor based on zinc oxide (ZnO) nanorods was investigated. The hydrothermal sol-gel growth method was utilized to grow ZnO nanorods on indium tin oxide-coated glass substrates. The total active area of the working electrode was 0.3 × 0.3 cm2 where titanium metal was deposited to enhance the contact. Well aligned hexagonal structured ZnO nanorods with a diameter from 68 to 116 nm were obtained. The excitonic peak obtained from the absorbance spectroscopy was observed at ~370 nm. The dominant peak of Raman spectroscopy measurement was at 440 cm(-1), matching with the lattice vibration of ZnO. The uniform distribution of the GOx and Nafion membrane that has been done using spin coating technique at 4000 rotations per minute helps in enhancing the ion exchange and increasing the sensitivity of the fabricated electrochemical sensor. The amperometric response of the fabricated electrochemical sensor was 3 s. The obtained sensitivity of the fabricated ZnO electrochemical sensor was 10.911 mA/mM·cm2 and the lower limit of detection was 0.22 µM. PMID:26263988

  18. An Electrochemical Glucose Sensor Based on Zinc Oxide Nanorods.

    PubMed

    Marie, Mohammed; Mandal, Sanghamitra; Manasreh, Omar

    2015-01-01

    A glucose electrochemical sensor based on zinc oxide (ZnO) nanorods was investigated. The hydrothermal sol-gel growth method was utilized to grow ZnO nanorods on indium tin oxide-coated glass substrates. The total active area of the working electrode was 0.3 × 0.3 cm2 where titanium metal was deposited to enhance the contact. Well aligned hexagonal structured ZnO nanorods with a diameter from 68 to 116 nm were obtained. The excitonic peak obtained from the absorbance spectroscopy was observed at ~370 nm. The dominant peak of Raman spectroscopy measurement was at 440 cm(-1), matching with the lattice vibration of ZnO. The uniform distribution of the GOx and Nafion membrane that has been done using spin coating technique at 4000 rotations per minute helps in enhancing the ion exchange and increasing the sensitivity of the fabricated electrochemical sensor. The amperometric response of the fabricated electrochemical sensor was 3 s. The obtained sensitivity of the fabricated ZnO electrochemical sensor was 10.911 mA/mM·cm2 and the lower limit of detection was 0.22 µM.

  19. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  20. Spatial atomic layer deposition of zinc oxide thin films.

    PubMed

    Illiberi, A; Roozeboom, F; Poodt, P

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and morphology), and optical properties of the films have been analyzed by using Hall, four-point probe, X-ray diffraction, scanning electron microscopy, spectrophotometry, and photoluminescence, respectively. All the films have c-axis (100) preferential orientation, good crystalline quality and high transparency (∼ 85%) in the visible range. By varying the DEZ partial pressure, the electrical properties of ZnO can be controlled, ranging from heavily n-type conductive (with 4 mOhm.cm resistivity for 250 nm thickness) to insulating. Combining the high deposition rates with a precise control of functional properties (i.e., conductivity and transparency) of the films, the industrially scalable spatial ALD technique can become a disruptive manufacturing method for the ZnO-based industry.

  1. Influence Of pH On The Transport Of Nanoscale Zinc Oxide In Saturated Porous Media

    EPA Science Inventory

    Widespread use of nanoscale zinc oxide (nZnO) in various fields causes subsurface environment contamination. Even though the transport of dissolved zinc ions in subsurface environments such as soils and sediments has been widely studied, the transport mechanism of nZnO in such e...

  2. A novel in-situ method for inhibiting surface roughening during the thermal oxide desorption etching of silicon and gallium arsenide

    NASA Astrophysics Data System (ADS)

    Pun, Arthur Fong-Yuen

    A method inhibiting surface roughening of silicon and gallium arsenide wafers during the thermal desorption of their native oxide layers is proposed and tested experimentally, with silicon results indicating a 75% reduction in surface roughness from an averaged value of 2.20 nm to 0.56 nm, and gallium arsenide results indicating a 76% reduction from an averaged surface roughness of 1.6 nm to 0.4 nm. This method does not significantly alter the semiconductor crystalline surface, thus retaining suitability for subsequent epitaxial growth, as demonstrated experimentally. The method is readily implementable in currently utilized deposition systems, subject to the requirements of material growth, substrate heating, and producing a non-oxidizing environment, either inert atmosphere or reduced pressures. The technique involves depositing a thin sacrificial film directly onto the native oxide surface at lower temperatures, of which the thickness is dependent on both the native oxide thickness and the oxide stochiometry initially present within the oxide layer, but has been found experimentally to be on the order of 0.5 nm -- 4 nm for a 2 nm to 4 nm air-formed native oxide layer. Upon heating this structure to high temperatures, the native oxide preferentially reacts with the sacrificial deposited film instead of the bulk wafer, resulting in the chemical reduction to volatile components, which are evaporated at these temperatures. This method is developed for silicon and gallium arsenide and examined experimentally utilizing atomic force microscopy and reflection high-energy electron diffraction. Different native oxide preparation techniques are theorized to yield varying chemical stochiometries, with experimental results elucidating information regarding these differences. Further, a modified tri-layer implementation, in which the deposited film is re-oxidized, is tested for applicability as a novel wafer pacification technique.

  3. Bioavailability of zinc oxide added to corn tortilla is similar to that of zinc sulfate and is not affected by simultaneous addition of iron

    PubMed Central

    Rosado, Jorge L.; Díaz, Margarita; Muñoz, Elsa; Westcott, Jamie L.; González, Karla E.; Krebs, Nancy F.; Caamaño, María C.; Hambidge, Michael

    2013-01-01

    Background Corn tortilla is the staple food of Mexico and its fortification with zinc, iron, and other micronutrients is intended to reduce micronutrient deficiencies. However, no studies have been performed to determine the relative amount of zinc absorbed from the fortified product and whether zinc absorption is affected by the simultaneous addition of iron. Objective To compare zinc absorption from corn tortilla fortified with zinc oxide versus zinc sulfate and to determine the effect of simultaneous addition of two doses of iron on zinc bioavailability. Methods A randomized, double-blind, crossover design was carried out in two phases. In the first phase, 10 adult women received corn tortillas with either 20 mg/kg of zinc oxide added, 20 mg/kg of zinc sulfate added, or no zinc added. In the second phase, 10 adult women received corn tortilla with 20 mg/kg of zinc oxide added and either with no iron added or with iron added at one of two different levels. Zinc absorption was measured by the stable isotope method. Results The mean (± SEM) fractional zinc absorption from unfortified tortilla, tortilla fortified with zinc oxide, and tortilla fortified with zinc sulfate did not differ among treatments: 0.35 ± 0.07, 0.36 ± 0.05, and 0.37 ± 0.07, respectively. The three treatment groups with 0, 30, and 60 mg/kg of added iron had similar fractional zinc absorption (0.32 ± 0.04, 0.33 ± 0.02, and 0.32 ± 0.05, respectively) and similar amounts of zinc absorbed (4.8 ± 0.7, 4.5 ± 0.3, and 4.8 ± 0.7 mg/day, respectively). Conclusions Since zinc oxide is more stable and less expensive and was absorbed equally as well as zinc sulfate, we suggest its use for corn tortilla fortification. Simultaneous addition of zinc and iron to corn tortilla does not modify zinc bioavailability at iron doses of 30 and 60 mg/kg of corn flour. PMID:23424892

  4. Zinc poisoning

    MedlinePlus

    ... other materials to make industrial items such as paint, dyes, and more. These combination substances can be ... Compounds used to make paint, rubber, dyes, wood preservatives, and ... Zinc chloride Zinc oxide (relatively nonharmful) Zinc ...

  5. Hepatic and renal metallothionein induction following single oral administration of gallium arsenide in rats.

    PubMed

    Flora, S J; Tripathi, N

    1998-09-01

    Metallothionein genes (MT) are inducible by a variety of agents, including heavy metals. We report the induction of MT expression by gallium arsenide (GaAs), a superior intermetallic semiconductor material at two time intervals following single oral exposure in rats. The data is also supplemented with two additional groups exposed to gallium (III) as gallium oxide and arsenic (III) as sodium arsenite to determine which of the two moieties in GaAs is responsible for any such possible effects. The results indicate that GaAs administration does significantly induces MT in hepatic tissues accompanied by an increase in cytosolic glutathione, arsenic, zinc and copper concentration. It thus proves that arsenic moiety is chiefly responsible for such an effect.

  6. Inhibitory action of two zinc oxide sources on the ex vivo growth of porcine small intestine bacteria.

    PubMed

    Vahjen, W; Zentek, J; Durosoy, S

    2012-12-01

    Pharmacological dosage of zinc oxide in piglet weaning diets is a common practice to improve growth performance and gut health. However, high zinc excretion in animal wastes poses environmental challenges. Alternatives to current practice are studied. In this study, the inhibitory action of 2 zinc oxide sources on the ex vivo growth of small intestinal bacteria from weaned piglets was studied. Lag time was higher (P < 0.05) in media supplemented with a new zinc oxide preparation in stomach samples, but not in jejunum samples. Bacterial growth reduction (P < 0.05) was more drastic and more rapid in media supplemented with the new zinc oxide preparation.

  7. Hydrothermal synthesis of zinc oxide nanoparticles using rice as soft biotemplate

    PubMed Central

    2013-01-01

    Background Rice as a renewable, abundant bio-resource with unique characteristics can be used as a bio-template to synthesize various functional nanomaterials. Therefore, the effect of uncooked rice flour as bio-template on physico-chemical properties, especially the morphology of zinc oxide nanostructures was investigated in this study. The ZnO particles were synthesized through hydrothermal-biotemplate method using zinc acetate-sodium hydroxide and uncooked rice flour at various ratios as precursors at 120°C for 18 hours. Results The results indicate that rice as a bio-template can be used to modify the shape and size of zinc oxide particles. Different morphologies, namely flake-, flower-, rose-, star- and rod-like structures were obtained with particle size at micro- and nanometer range. Pore size and texture of the resulting zinc oxide particles were found to be template-dependent and the resulting specific surface area enhanced compared to the zinc oxide synthesized without rice under the same conditions. However, optical property particularly the band gap energy is generally quite similar. Conclusion Pure zinc oxide crystals were successfully synthesized using rice flour as biotemplate at various ratios of zinc salt to rice. The size- and shape-controlled capability of rice to assemble the ZnO particles can be employed for further useful practical applications. PMID:23919386

  8. Development of a poly (ether urethane) system for the controlled release of two novel anti-biofilm agents based on gallium or zinc and its efficacy to prevent bacterial biofilm formation

    PubMed Central

    Ma, Hongyan; Darmawan, Erica T.; Zhang, Min; Zhange, Lei; Bryers, James D.

    2013-01-01

    Traditional antibiotic therapy to control medical device-based infections typically fails to clear biofilm infections and may even promote the evolution of antibiotic resistant species. We report here the development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin IX (PP) or mesoprotoporphyrin IX (MP) that are both highly effective in negating suspended bacterial growth and biofilm formation. These chelated gallium or zinc complexes act as iron siderophore analogs, surplanting the natural iron uptake of most bacteria. Poly (ether urethane) (PEU; Biospan®) polymer films were fabricated for the controlled sustained release of the Ga- or Zn-complexes, using an incorporated pore-forming agent, poly (ethylene glycol) (PEG). An optimum formulation containing 8% PEG (MW=1450) in the PEU polymer effectively sustained drug release for at least 3 months. All drug-loaded PEU films exhibited in vitro ≥ 90% reduction of Gram-positive (Staphylococcus epidermidis) and Gram-negative (Pseudomonas aeruginosa) bacteria in both suspended and biofilm culture versus the negative control PEU films releasing nothing. Cytotoxicity and endotoxin evaluation demonstrated no adverse responses to the Ga- or Zn-complex releasing PEU films. Finally, in vivo studies further substantiate the anti-biofilm efficacy of the PEU films releasing Ga- or Zn- complexes. PMID:24140747

  9. Development of a poly(ether urethane) system for the controlled release of two novel anti-biofilm agents based on gallium or zinc and its efficacy to prevent bacterial biofilm formation.

    PubMed

    Ma, Hongyan; Darmawan, Erica T; Zhang, Min; Zhang, Lei; Bryers, James D

    2013-12-28

    Traditional antibiotic therapy to control medical device-based infections typically fails to clear biofilm infections and may even promote the evolution of antibiotic resistant species. We report here the development of two novel antibiofilm agents; gallium (Ga) or zinc (Zn) complexed with protoporphyrin IX (PP) or mesoprotoporphyrin IX (MP) that are both highly effective in negating suspended bacterial growth and biofilm formation. These chelated gallium or zinc complexes act as iron siderophore analogs, supplanting the natural iron uptake of most bacteria. Poly (ether urethane) (PEU; Biospan®) polymer films were fabricated for the controlled sustained release of the Ga- or Zn-complexes, using an incorporated pore-forming agent, poly(ethylene glycol) (PEG). An optimum formulation containing 8% PEG (MW=1450) in the PEU polymer effectively sustained drug release for at least 3months. All drug-loaded PEU films exhibited in vitro ≥ 90% reduction of Gram-positive (Staphylococcus epidermidis) and Gram-negative (Pseudomonas aeruginosa) bacteria in both suspended and biofilm culture versus the negative control PEU films releasing nothing. Cytotoxicity and endotoxin evaluation demonstrated no adverse responses to the Ga- or Zn-complex releasing PEU films. Finally, in vivo studies further substantiate the anti-biofilm efficacy of the PEU films releasing Ga- or Zn- complexes.

  10. Flexible and monolithic zinc oxide bionanocomposite foams by a bacterial cellulose mediated approach for antibacterial applications.

    PubMed

    Wang, Peipei; Zhao, Jun; Xuan, Ruifei; Wang, Yun; Zou, Chen; Zhang, Zhiquan; Wan, Yizao; Xu, Yan

    2014-05-14

    The use of self-assembled biomacromolecules in the development of functional bionanocomposite foams is one of the best lessons learned from nature. Here, we show that monolithic, flexible and porous zinc oxide bionanocomposite foams with a hierarchical architecture can be assembled through the mediation of bacterial cellulose. The assembly is achieved by controlled hydrolysis and solvothermal crystallization using a bacterial cellulose aerogel as a template in a non-aqueous polar medium. The bionanocomposite foam with a maximum zinc oxide loading of 70 wt% is constructed of intimately packed spheres of aggregated zinc oxide nanocrystals exhibiting a BET surface area of 92 m(2) g(-1). The zinc oxide bionanocomposite foams show excellent antibacterial activity, which give them potential value as self-supporting wound dressing and water sterilization materials.

  11. Fabrication of Vertically Aligned Carbon Nanotube or Zinc Oxide Nanorod Arrays for Optical Diffraction Gratings.

    PubMed

    Kim, Jeong; Kim, Sun Il; Cho, Seong-Ho; Hwang, Sungwoo; Lee, Young Hee; Hur, Jaehyun

    2015-11-01

    We report on new fabrication methods for a transparent, hierarchical, and patterned electrode comprised of either carbon nanotubes or zinc oxide nanorods. Vertically aligned carbon nanotubes or zinc oxide nanorod arrays were fabricated by either chemical vapor deposition or hydrothermal growth, in combination with photolithography. A transparent conductive graphene layer or zinc oxide seed layer was employed as the transparent electrode. On the patterned surface defined using photoresist, the vertically grown carbon nanotubes or zinc oxides could produce a concentrated electric field under applied DC voltage. This periodic electric field was used to align liquid crystal molecules in localized areas within the optical cell, effectively modulating the refractive index. Depending on the material and morphology of these patterned electrodes, the diffraction efficiency presented different behavior. From this study, we established the relationship between the hierarchical structure of the different electrodes and their efficiency for modulating the refractive index. We believe that this study will pave a new path for future optoelectronic applications.

  12. Transport of Zinc Oxide Nanoparticles in a Simulated Gastric Environment

    NASA Astrophysics Data System (ADS)

    Mayfield, Ryan T.

    Recent years have seen a growing interest in the use of many types of nano sized materials in the consumer sector. Potential uses include encapsulation of nutrients, providing antimicrobial activity, altering texture, or changing bioavailability of nutrients. Engineered nanoparticles (ENP) possess properties that are different than larger particles made of the same constituents. Properties such as solubility, aggregation state, and toxicity can all be changed as a function of size. The gastric environment is an important area for study of engineered nanoparticles because of the varied physical, chemical, and enzymatic processes that are prevalent there. These all have the potential to alter those properties of ENP that make them different from their bulk counterparts. The Human Gastric Simulator (HGS) is an advanced in vitro model that can be used to study many facets of digestion. The HGS consists of a plastic lining that acts as the stomach cavity with two sets of U-shaped arms on belts that provide the physical forces needed to replicate peristalsis. Altering the position of the arms or changing the speed of the motor which powers them allows one to tightly hone and replicate varied digestive conditions. Gastric juice, consisting of salts, enzymes, and acid levels which replicate physiological conditions, is introduced to the cavity at a controllable rate. The release of digested food from the lumen of simulated stomach is controlled by a peristaltic pump. The goal of the HGS is to accurately and repeatedly simulate human digestion. This study focused on introducing foods spiked with zinc oxide ENP and bulk zinc oxide into the HGS and then monitoring how the concentration of each changed at two locations in the HGS over a two hour period. The two locations chosen were the highest point in the lumen of the stomach, which represented the fundus, and a point just beyond the equivalent of the pylorus, which represented the antrum of the stomach. These points were

  13. Burn-induced oxidative stress is altered by a low zinc status: kinetic study in burned rats fed a low zinc diet

    PubMed Central

    Claeyssen, Richard; Andriollo-Sanchez, Maud; Arnaud, Josiane; Touvard, Laurence; Alonso, Antonia; Chancerelle, Yves; Roussel, Anne-Marie; Agay, Diane

    2008-01-01

    As an initial subdeficient status of zinc, considered as an essential antioxidant trace element, is frequent in burned patients, we aim to assess the effects of low zinc dietary intakes on burn induced oxidative stress, in an animal model. After eight weeks of conditioning diets containing 80 ppm (control group) or 10 ppm of zinc (depleted group), Wistar rats were 20% TBSA burned and sampled one to ten days after injury. Kinetic evolutions of zinc status, plasma oxidative stress parameters and antioxidant enzymes were also studied in blood and organs. The zinc depleted diet induced, before injury, a significant decrease in zinc bone level and the increase of oxidative stress markers without stimulation of antioxidant enzyme activity. After burn, more markedly in zinc depleted animals than in controls, zinc levels decreased in plasma and bone, while increasing in liver. The decrease of thiol groups and GSH/GSSG ratio and the depression of GPx activity in liver are also moderately emphasized. Nevertheless, depleted zinc status could not be considered as determining for oxidative damages after burn injury. Further investigations must also be done to enlighten the mechanism of beneficial effects of zinc supplementation reported in burned patients. PMID:18773151

  14. Synthesis and characterization of nanostructured zinc oxide layers for sensor applications

    SciTech Connect

    Krasteva, L. K.; Dimitrov, D. Tz.; Papazova, K. I.; Nikolaev, N. K.; Peshkova, T. V.; Moshnikov, V. A.; Gracheva, I. E. Karpova, S. S.; Kaneva, N. V.

    2013-04-15

    Fractal structures and arrays of nanowires based on zinc oxide are fabricated by two different methods, sol-gel dip-coating and chemical bath deposition combined with sol-gel synthesis. The gas-sensitive properties of the structures are analyzed. It is found that the greatest sensitivity to reducing ethanol vapor is exhibited by the structure with a lower layer in the form of an array of zinc-oxide nanowires modified by four immersions in a copper nitrate solution.

  15. Zinc Supplementation Prevents Alcoholic Liver Injury in Mice through Attenuation of Oxidative Stress

    PubMed Central

    Zhou, Zhanxiang; Wang, Lipeng; Song, Zhenyuan; Saari, Jack T.; McClain, Craig J.; Kang, Y. James

    2005-01-01

    Alcoholic liver disease is associated with zinc decrease in the liver. Therefore, we examined whether dietary zinc supplementation could provide protection from alcoholic liver injury. Metallothionein-knockout and wild-type 129/Sv mice were pair-fed an ethanol-containing liquid diet for 12 weeks, and the effects of zinc supplementation on ethanol-induced liver injury were analyzed. Zinc supplementation attenuated ethanol-induced hepatic zinc depletion and liver injury as measured by histopathological and ultrastructural changes, serum alanine transferase activity, and hepatic tumor necrosis factor-α in both metallothionein-knockout and wild-type mice, indicating a metallothionein-independent zinc protection. Zinc supplementation inhibited accumulation of reactive oxygen species, as indicated by dihydroethidium fluorescence, and the consequent oxidative damage, as assessed by immunohistochemical detection of 4-hydroxynonenal and nitrotyrosine and quantitative analysis of malondialdehyde and protein carbonyl in the liver. Zinc supplementation suppressed ethanol-elevated cytochrome P450 2E1 activity but increased the activity of alcohol dehydrogenase in the liver, without affecting the rate of blood ethanol elimination. Zinc supplementation also prevented ethanol-induced decreases in glutathione concentration and glutathione peroxidase activity and increased glutathione reductase activity in the liver. In conclusion, zinc supplementation prevents alcoholic liver injury in an metallothionein-independent manner by inhibiting the generation of reactive oxygen species (P450 2E1) and enhancing the activity of antioxidant pathways. PMID:15920153

  16. Oxide Solar Cells Fabricated Using Zinc Oxide and Plasma-Oxidized Cuprous Oxide

    NASA Astrophysics Data System (ADS)

    Chan, Yi-Ming; Wu, Ya-Ting; Jou, Shyankay

    2012-12-01

    Oxide heterojunction solar cells composed of an n-type Al-doped ZnO (AZO) thin film on the surfaces of p-type Cu2O films were fabricated. The Cu2O films of about 0.34 to 1.67 µm thickness were grown by partial oxidation of a Cu sheet using microwave plasma. The AZO film of 400 nm thickness was deposited by magnetron sputtering. Energy conversion efficiencies of 0.12 to 0.30% were obtained in AZO/Cu2O cells under AM1.5 solar illumination.

  17. The role of intracellular zinc release in aging, oxidative stress, and Alzheimer’s disease

    PubMed Central

    McCord, Meghan C.; Aizenman, Elias

    2014-01-01

    Brain aging is marked by structural, chemical, and genetic changes leading to cognitive decline and impaired neural functioning. Further, aging itself is also a risk factor for a number of neurodegenerative disorders, most notably Alzheimer’s disease (AD). Many of the pathological changes associated with aging and aging-related disorders have been attributed in part to increased and unregulated production of reactive oxygen species (ROS) in the brain. ROS are produced as a physiological byproduct of various cellular processes, and are normally detoxified by enzymes and antioxidants to help maintain neuronal homeostasis. However, cellular injury can cause excessive ROS production, triggering a state of oxidative stress that can lead to neuronal cell death. ROS and intracellular zinc are intimately related, as ROS production can lead to oxidation of proteins that normally bind the metal, thereby causing the liberation of zinc in cytoplasmic compartments. Similarly, not only can zinc impair mitochondrial function, leading to excess ROS production, but it can also activate a variety of extra-mitochondrial ROS-generating signaling cascades. As such, numerous accounts of oxidative neuronal injury by ROS-producing sources appear to also require zinc. We suggest that zinc deregulation is a common, perhaps ubiquitous component of injurious oxidative processes in neurons. This review summarizes current findings on zinc dyshomeostasis-driven signaling cascades in oxidative stress and age-related neurodegeneration, with a focus on AD, in order to highlight the critical role of the intracellular liberation of the metal during oxidative neuronal injury. PMID:24860495

  18. [Permeation of triamcinolone acetonide and zinc oxide from a shake lotion].

    PubMed

    Stüttgen, G; Bauer, E; Wiese, G; Maue, V

    1983-08-01

    Triamcinolone-acetonide crystals suspended in a zinc oxide shake lotion permeate the deeper skin layers especially if applied to a damaged horny layer. The influx rate of the corticosteroid is approximately 20 times higher in damaged skin (e.g. removing of horny layer by stripping) than in healthy skin. Zinc oxide is absorbed by the middle and lower layers of the horny layer respectively epidermis, out of the triamcinolone-acetonide shake lotion. The corticosteroid and zinc component as well as a physical properties of the shake lotion have a therapeutical effect.

  19. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.

    PubMed

    Ahn, Byung Du; Jeon, Hye Ji; Park, Jin-Seong

    2014-06-25

    This paper addressed the effect of gallium nitrate hydrate addition on thin film transistor (TFT) performance and positive bias stability of amorphous zinc tin oxide (ZTO) TFTs by solution processing, Further, the mechanisms responsible for chemical properties and electronic band structure are explored. A broad exothermic peak accompanied by weight loss appeared in the range from about 350 to 570 °C for the ZTO solution; the thermal reaction of the Ga-ZTO:N solution was completed at 520 °C. This is because the gallium nitrate hydrate precursor promoted the decomposition and dehydroxylation reaction for Zn(CH3COO)2·2H2O and/or SnCl2·2H2O precursors. The concentrations of carbon and chloride in gallium nitrate hydrate added ZTO films annealed at 400 °C have a lower value (C 0.65, Cl 0.65 at. %) compared with those of ZTO films (C 3.15, Cl 0.82 at. %). Absorption bands at 416, 1550, and 1350 cm(-1) for GaZTO:N films indicated the presence of ZnGa2O4, N-H, and N═O groups by Fourier transform infrared spectroscopy measurement, respectively. As a result, an inverted staggered Ga-ZTO:N TFT exhibited a mobility of 4.84 cm(2) V(-1) s(-1) in the saturation region, a subthreshold swing of 0.35 V/decade, and a threshold gate voltage (Vth) of 0.04 V. In addition, the instability of Vth values of the ZTO TFTs under positive bias stress conditions was suppressed by adding Ga and N from 13.6 to 3.17 V, which caused a reduction in the oxygen-related defects located near the conduction band. PMID:24892383

  20. Alterations of Bio-elements, Oxidative, and Inflammatory Status in the Zinc Deficiency Model in Rats.

    PubMed

    Doboszewska, Urszula; Szewczyk, Bernadeta; Sowa-Kućma, Magdalena; Noworyta-Sokołowska, Karolina; Misztak, Paulina; Gołębiowska, Joanna; Młyniec, Katarzyna; Ostachowicz, Beata; Krośniak, Mirosław; Wojtanowska-Krośniak, Agnieszka; Gołembiowska, Krystyna; Lankosz, Marek; Piekoszewski, Wojciech; Nowak, Gabriel

    2016-01-01

    Our previous study showed that dietary zinc restriction induces depression-like behavior with concomitant up-regulation of the N-methyl-D-aspartate receptor (NMDAR). Because metal ions, oxidative stress, and inflammation are involved in depression/NMDAR function, in the present study, bio-elements (zinc, copper, iron, magnesium, and calcium), oxidative (thiobarbituric acid-reactive substances; protein carbonyl content), and inflammatory (IL-1α, IL-1β) factors were measured in serum, hippocampus (Hp), and prefrontal cortex (PFC) of male Sprague-Dawley rats subjected to a zinc-adequate (ZnA) (50 mg Zn/kg) or a zinc-deficient (ZnD) (3 mg Zn/kg) diet for 4 or 6 weeks. Both periods of dietary zinc restriction reduced serum zinc and increased serum iron levels. At 4 weeks, lowered zinc level in the PFC and Hp as well as lowered iron level in the PFC of the ZnD rats was observed. At 6 weeks, however, iron level was increased in the PFC of these rats. Although at 6 weeks zinc level in the PFC did not differ between the ZnA and ZnD rats, extracellular zinc concentration after 100 mM KCl stimulation was reduced in the PFC of the ZnD rats and was accompanied by increased extracellular iron and glutamate levels (as measured by the in vivo microdialysis). The examined oxidative and inflammatory parameters were generally enhanced in the tissue of the ZnD animals. The obtained data suggest dynamic redistribution of bio-elements and enhancement of oxidative/inflammatory parameters after dietary zinc restriction, which may have a link with depression-like behavior/NMDAR function/neurodegeneration.

  1. Study of phosphate removal from aqueous solution by zinc oxide.

    PubMed

    Luo, Zhen; Zhu, Suiyi; Liu, Zhongmou; Liu, Jiancong; Huo, Mingxin; Yang, Wu

    2015-09-01

    Zinc oxide (ZnO) was synthesized and used to investigate the mechanism of phosphate removal from aqueous solution. ZnO particles were characterized by X-ray diffraction, scanning electron microscope and Fourier transform infrared spectroscopy before and after adsorption. Batch experiments were carried out to investigate the kinetics, isotherms, effects of initial pH and co-existing anions. The adsorption process was rapid and equilibrium was almost reached within 150 min. The adsorption kinetics were described well by a pseudo-second-order equation, and the maximum phosphate adsorption capacity was 163.4 mg/g at 298 K and pH ∼6.2±0.1. Thermodynamic analysis indicated the phosphate adsorption onto ZnO was endothermic and spontaneous. The point of zero charge of ZnO was around 8.4 according to the pH-drift method. Phosphate adsorption capacity reduced with the increasing initial solution pH values. The ligand exchange and Lewis acid-base interaction dominated the adsorption process in the lower and the higher pH range, respectively. Nitrate, sulfate and chloride ions had a negligible effect on phosphate removal, while carbonate displayed significant inhibition behavior.

  2. Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2014-09-01

    Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature ( T G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm2/V-s and 3.26 × 1020 cm-3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10-4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.

  3. Fungus mediated biosynthesis and characterization of zinc oxide nanorods

    NASA Astrophysics Data System (ADS)

    Venkatesh, K. S.; Palani, N. S.; Krishnamoorthi, S. R.; Thirumal, V.; Ilangovan, R.

    2013-06-01

    Recently nanomaterials have been synthesized through biological approach due to its biocompatibility, inexpensive, eco friendly and it offers easiest experimental protocol and so on. ZnO can be potentially used in various applications. This present study reports the fungus mediated extra-cellular bio synthesis of ZnO nanorods using Fusarium Solani. The dried powder was calcined at 350°C for 1 hour in air. The thermal property of the as synthesized ZnO nanopowder was analyzed through Thermo gravimetric /Differential Thermo gravimetric (TGA / DTG) analysis. The structural and morphological properties of the calcined ZnO nanopowder were studied by XRD and SEM analysis respectively. X ray diffraction result revealed that a peak located at 2θ = 36.2° with (101) plane confirms the presence of Zinc oxide with Hexagonal crystal system. The morphology of the calcined ZnO powder was analyzed by Scanning Electron Microscopy and it clearly indicates the presence of ZnO nanorods. The diameter of the nanorods is in the range of 60 to 95 nm.

  4. Antibacterial effect of zinc oxide nanoparticles combined with ultrasound

    NASA Astrophysics Data System (ADS)

    Seil, Justin T.; Webster, Thomas J.

    2012-12-01

    Using Staphylococcus aureus (S. aureus), the present study investigated the antibacterial effect of ZnO nanoparticles both in the absence and presence of ultrasound stimulation. While the antibacterial effect of control nanoparticle chemistries (Al2O3) alone was either weak or unobservable under the conditions tested, the antibacterial effect of ZnO alone was significant, providing over a four log reduction (equivalent to antibiotics) compared to no treatment after just 8 h. The antibacterial effect was enhanced as ZnO particle diameter decreased. Specifically, when testing the antibacterial effect against bacteria populations relevant to infection, a 500 μg ml-1 dose of zinc oxide nanoparticles with a diameter of 20 nm reduced S. aureus populations by four orders of magnitude after 8 and 24 h, compared to control groups with no nanoparticles. This was accomplished without the use of antibiotics, to which bacteria are developing a resistance anyway. The addition of ultrasound stimulation further reduced the number of viable colony-forming units present in a planktonic cell suspension by 76% compared to nanoparticles alone. Lastly, this study provided a mechanism for how ZnO nanoparticles in the presence of ultrasound decrease bacteria functions by demonstrating greater hydrogen peroxide generation by S. aureus compared to controls. These results indicated that small-diameter ZnO nanoparticles exhibited strong antibacterial properties that can be additionally enhanced in the presence of ultrasound and, thus, should be further studied for a wide range of medical device anti-infection applications.

  5. Fabrication and Electrical Characterization of Zinc Oxide Nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Daqing; Lee, Chun-Hong; Berven, Chris; Katkanant, Vanvilai

    2009-03-01

    One dimensional semiconducting zinc oxide (ZnO) nanowires have drawn attractive attentions in the past years. The unique electrical, optical, and piezoelectric properties of ZnO nanowires make them broaden applications ranging from light emitting diode and lasers, solar cells, photodetectors, electron transporters and transistors, to piezoelectric generators. In our research, two-terminal current-voltage (I-V) measurements were conducted to determine the electrical conductivity alternation of the ZnO nanowires under laser irradiation, and various gaseous surroundings. The I-V curves at the temperature ranged from 150 to 300 K were recorded in vacuum. The Arrhenius plot shows perfect linear relation between I and 1/T. The donor lever of the semiconducting nanowire is about 326 meV. We observed that the current increased 50% with laser on in comparison to that with it off; it raised by a factor of four under ambient reductive gas CO. In addition, the I-V behaviors were found to be reversible with those various environments. Further studies on the possible nano- devices such as optical switches and chemical sensors are undergoing.

  6. Study of phosphate removal from aqueous solution by zinc oxide.

    PubMed

    Luo, Zhen; Zhu, Suiyi; Liu, Zhongmou; Liu, Jiancong; Huo, Mingxin; Yang, Wu

    2015-09-01

    Zinc oxide (ZnO) was synthesized and used to investigate the mechanism of phosphate removal from aqueous solution. ZnO particles were characterized by X-ray diffraction, scanning electron microscope and Fourier transform infrared spectroscopy before and after adsorption. Batch experiments were carried out to investigate the kinetics, isotherms, effects of initial pH and co-existing anions. The adsorption process was rapid and equilibrium was almost reached within 150 min. The adsorption kinetics were described well by a pseudo-second-order equation, and the maximum phosphate adsorption capacity was 163.4 mg/g at 298 K and pH ∼6.2±0.1. Thermodynamic analysis indicated the phosphate adsorption onto ZnO was endothermic and spontaneous. The point of zero charge of ZnO was around 8.4 according to the pH-drift method. Phosphate adsorption capacity reduced with the increasing initial solution pH values. The ligand exchange and Lewis acid-base interaction dominated the adsorption process in the lower and the higher pH range, respectively. Nitrate, sulfate and chloride ions had a negligible effect on phosphate removal, while carbonate displayed significant inhibition behavior. PMID:26322756

  7. Detrimental Effects of Zinc Oxide Nanoparticles on Amphibian Life Stages.

    PubMed

    Spence, Austin Reid; Hopkins, Gareth Rowland; Neuman-Lee, Lorin Anne; Smith, Geoffrey David Stuart; Brodie, Edmund Darrell; French, Susannah Smith

    2016-08-01

    While the use of nanoparticles has dramatically increased in recent years, the ecological consequences are not well known. In particular, little research has been done to investigate the potentially detrimental effects of nanoparticles on amphibians, especially across all life-history stages of salamanders and newts (caudates). To address this dearth in knowledge, we examined the effects of zinc oxide (ZnO) nanoparticles on egg, larval, and adult Rough-skinned Newts (Taricha granulosa). Chronic toxicity was tested on eggs and larvae, and acute toxicity was tested on eggs, larvae, and adults. For eggs, chronic exposure to ZnO nanoparticles caused higher mortality at 10.0 and 100.0 mg L(-1) compared to 0.0, 0.1, and 1.0 mg L(-1) . When given an acute exposure (24 hr) to 10.0 mg L(-1) nanoparticles at a late developmental stage, larvae hatched 5 days early, at a decreased developmental stage, and smaller size compared to the control. Chronic and acute exposure of larvae increased mortality up to 75% at both 10.0 and 100.0 mg L(-1) and exhibited sublethal effects, most dramatically, severe gill degradation. These results suggest nanoparticles can have lethal and sublethal effects on all life stages of amphibians. PMID:27453487

  8. Synthesis and characterisation: Zinc oxide-sulfide nanocomposites

    NASA Astrophysics Data System (ADS)

    Verma, Prinsa; Pandey, Avinash C.; Bhargava, R. N.

    2009-11-01

    A novel synthesis method is presented for the preparation of nanosized-semiconductor zinc oxide-sulphide (ZnO/ZnS) core-shell nanocomposites, both formed sequentially from a single-source solid precursor. ZnO nanocrystals were synthesized by a simple co-precipitation method and ZnO/ZnS core-shell nanocomposites were successfully fabricated by sulfidation of ZnO nanocrystals via a facile chemical synthesis at room temperature. The as-obtained samples were characterized by X-ray diffraction and transmission electron microscopy. The results showed that the pure ZnO nanocrystals were hexagonal wurtzite crystal structures and the ZnS nanoparticles were sphalerite structure with the size of about 10 nm grown on the surface of the ZnO nanocrystals. Optical properties measured reveal that ZnO/ZnS core-shell nanocomposites have integrated the photoluminescent effect of ZnO and ZnS. Based on the results of the experiments, a possible formation mechanism of ZnO/ZnS core-shell nanocomposites was also suggested. This treatment is suggested to improve various properties of optoelectronically valuable ZnO/ZnS nanocomposites. These nanosized semiconductor nanocomposites can form a new class of luminescent materials for various applications.

  9. Sonochemical approach for rapid growth of zinc oxide nanowalls

    NASA Astrophysics Data System (ADS)

    Nayak, Avinash P.; Katzenmeyer, Aaron M.; Gosho, Yasuhiro; Tekin, Bayram; Islam, M. Saif

    2012-06-01

    The sonochemical process drives chemical reactions with sound fields by creating extraordinarily high density of energy, pressure and temperatures. The process resulted in a number of unexpected chemical species and thought-provoking results in the recent past. In this paper, we present a new sonochemical approach to synthesize ZnO (zinc oxide) nanowalls (NWalls) on aluminum and alumina coated substrates at room ambient conditions. We achieved highly dense and uniform ZnO NWalls in areas that are coated with Al or Al2O3 (alumina). The synthesis process was shown not to occur on Si, SiO2, Cr, or Ag surfaces. A series of experiments on understanding the growth kinetics offers detailed insight into the growth dynamics over time. Photoluminescence (PL) measurements, UV Vis spectroscopy, and SEM-EDS results confirm NWalls composed of crystalline ZnO that are formed via Al assisted growth induced by phase transformations under extraordinary pressure, temperature, and chemical growth kinetics. The chemical growth method as reported here, is applicable to arbitrary substrates coated with an Al thin film. We demonstrate the applications of the as-formed NWalls in UV photoconductors and gas sensors.

  10. Gas Effect On Plasma Dynamics Of Laser Ablation Zinc Oxide

    SciTech Connect

    Abdelli-Messaci, S.; Kerdja, T.; Lafane, S.; Malek, S.

    2008-09-23

    In order to synthesis zinc oxide thin films and nanostructures, laser ablation of ZnO target into both vacuum and oxygen atmosphere was performed. The gas effect on the plume dynamics was studied for O{sub 2} pressures varied between 10{sup -2} to 70 mbar. Plasma plume evolution was investigated by ICCD camera fast imaging. The plasma was created by a KrF excimer laser ({lambda} = 248 nm, {tau} = 25 ns) at a fluence of 2 J/cm{sup 2}. The light emitted by the plume was observed along the perpendicular to the ejection direction through a fast intensified charge-coupled device (ICCD). We have found that the plasma dynamics is very affected by the gas pressures. The photographs reveal the stratification of plasma into slow and fast components for 0.5 mbar O{sub 2} pressures and beyond. The photographs also show the apparition of hydrodynamic instabilities which are related to chemical reactions between the plasma and the surrounding gas for a certain range of pressures.

  11. Immobilization of diastase α-amylase on nano zinc oxide.

    PubMed

    Antony, Navya; Balachandran, S; Mohanan, P V

    2016-11-15

    Diastase α-amylase extracted from malt, catalyses break down of starch into maltose. It is commonly used in food and fermentation industry. In the present study nano zinc oxide is used as support for this starch hydrolyzing enzyme. IR study revealed that the enzyme got adsorbed via electrostatic interaction with the functional groups on the support. The immobilized enzyme possessed a better heat-resistance than free enzyme. The kinetic parameters were determined using Lineweaver-Burk plot. The immobilized enzyme showed higher Km 2.08mg/ml than the free enzyme whose Km is 0.45±.05mg/ml. The Vmax of immobilized enzyme was about 2.92±.02mg/ml/min and that of free enzyme was 7.14±.02mg/ml/min, showing decrease in activity after immobilization. The immobilized enzyme showed 70% activity after 30days of storage while free enzyme lost its activity within 7days. About 80% of enzyme retained activity after 4 cycles of reuse.

  12. Biochemical responses of duckweed (Spirodela polyrhiza) to zinc oxide nanoparticles.

    PubMed

    Hu, Changwei; Liu, Yimeng; Li, Xiuling; Li, Mei

    2013-05-01

    The present study focuses on the biochemical responses of the aquatic plant duckweed (Spirodela polyrhiza L.) to zinc oxide nanoparticles (ZnO NPs). Laboratory experiments were performed using a 96-h exposure to 25-nm NPs at different concentrations (0, 1, 10, and 50 mg/L). Growth, chlorophyll-to-pheophytin ratio (D665/D665a) and activities of superoxide dismutase, catalase, peroxidase (POD), and Na(+), K(+)-ATPase were determined as indices to evaluate the toxicity of NPs in the culture medium. To understand better whether the Zn(2+) released from the ZnO NP suspensions plays a key role in toxicity of the NPs, we investigated particle aggregation and dissolution in the medium. Furthermore, two exposure treatments for the group with the highest concentration (50 mg/L) were performed: (1) exposure for the full 96 h (50a treatment) and (2) the medium being replaced with culture medium without NPs after 12 h (50b treatment). Our results indicate that ZnO NPs induced adverse effects in S. polyrhiza at the concentration of 50 mg/L in the culture medium. Zn(2+) released from the NPs might be the main source of its toxicity to this species.

  13. Morphology Control of Zinc Oxide Nanostructure on Single Layer Graphene.

    PubMed

    Ahn, Seungbae; Vijayarangamuthu, K; Jeon, Ki-Jeon

    2016-05-01

    Various morphologies of zinc oxide (ZnO) nanostructures on single layer graphene were synthesized by electrodeposition method. The current density was utilized to control the morphology of the ZnO. The Scanning Electron Microscope (SEM) was used to examine the surface morphology of the samples. SEM analysis shows morphology changes to nanorod, flower, and flakes with increase in the current density from 0.1, 0.2, and 0.3 mA/cm(-1) respectively. The XRD, XPS, and Raman spectroscopy were adopted to characterize the ZnO nanostructure and to understand the formation of various morphologies. The Raman result clearly shows extra modes due to for flakes structure caused by c-axis orientation along the substrate direction. Further, XPS data also supports formation of ZnO without any other intermediate compound such as Zn(OH)2. The formation of various morphologies was correlated to the formation different ratio of Zn2+ and OH- ions and the change in growth direction due to various current densities. PMID:27483766

  14. Structural transformation in nickel doped zinc oxide nanostructures

    SciTech Connect

    Goswami, Navendu; Sahai, Anshuman

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► A systematic study of 1–10% Ni doped ZnO nanostructures (Ni:ZnO NS). ► Effect of Ni concentration on properties of Ni:ZnO NS was intensively investigated. ► Structural transformation in Ni:ZnO NS demonstrated through characterizations. ► Alteration in vibrational modes of Ni:ZnO NS were meticulously analyzed. ► Intricacies of structural evolution, from particles to rods, were comprehended. -- Abstract: In this article, structural transformation in nickel doped zinc oxide nanostructures is reported. The ZnO nanostructures are synthesized with 1–10% of nickel doping through a chemical precipitation method. The undoped and doped nanostructures were systematically investigated employing X-ray diffraction (XRD), transmission and scanning electron microscopy (TEM/SEM), Fourier transform infrared (FTIR) and micro-Raman spectroscopy (μRS). The wurtzite phase of the material and associated lattice parameters were ascertained through XRD analysis. TEM/SEM images reveal the structural transformation of ZnO nanostructures with variation in nickel doping. The study of vibrational modes of nanostructures at different stages of structural transformation, as performed through FTIR and Raman spectroscopy, assist in deciphering the pivotal role of doping concentration in gradual evolution of nickel doped ZnO structure from nanoparticles to nanorods.

  15. Zinc oxide nanowire gamma ray detector with high spatiotemporal resolution

    NASA Astrophysics Data System (ADS)

    Mayo, Daniel C.; Nolen, J. Ryan; Cook, Andrew; Mu, Richard R.; Haglund, Richard F.

    2016-03-01

    Conventional scintillation detectors are typically single crystals of heavy-metal oxides or halides doped with rare-earth ions that record the recombination of electron-hole pairs by photon emission in the visible to ultraviolet. However, the light yields are typically low enough to require photomultiplier detection with the attendant instrumental complications. Here we report initial studies of gamma ray detection by zinc oxide (ZnO) nanowires, grown by vapor-solid deposition. The nanowires grow along the c-axis in a wurtzite structure; they are typically 80 nm in diameter and have lengths of 1- 2 μm. The nanowires are single crystals of high quality, with a photoluminescence (PL) yield from band-edge exciton emission in the ultraviolet that is typically one hundred times larger than the PL yield from defect centers in the visible. Nanowire ensembles were irradiated by 662 keV gamma rays from a Cs-137 source for periods of up to ten hours; gamma rays in this energy range interact by Compton scattering, which in ZnO creates F+ centers that relax to form singly-charged positive oxygen vacancies. Following irradiation, we fit the PL spectra of the visible emission with a sum of Gaussians at the energies of the known defects. We find highly efficient PL from the irradiated area, with a figure of merit approaching 106 photons/s/MeV of deposited energy. Over a period of days, the singly charged O+ vacancies relax to the more stable doubly charged O++ vacancies. However, the overall defect PL returns to pre-irradiation values after about a week, as the vacancies diffuse to the surface of these very thin nanowires, indicating that a self-healing process restores the nanowires to their original state.

  16. Understanding the defect structure of solution grown zinc oxide

    SciTech Connect

    Liew, Laura-Lynn; Sankar, Gopinathan; Handoko, Albertus D.; Goh, Gregory K.L.; Kohara, Shinji

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  17. Adsorption of poly(vinyl formamide-co-vinyl amine) (PVFA-co-PVAm) polymers on zinc, zinc oxide, iron, and iron oxide surfaces.

    PubMed

    Seifert, Susan; Simon, Frank; Baumann, Giesela; Hietschold, Michael; Seifert, Andreas; Spange, Stefan

    2011-12-01

    The adsorption of poly(vinyl formamide) (PVFA) and the statistic copolymers poly(vinyl formamide-co-vinyl amine) (PVFA-co-PVAm) onto zinc and iron metal particles as well as their oxides was investigated. The adsorbates were characterized by means of XPS, DRIFT spectroscopy, wet chemical analysis, and solvatochromic probes. Dicyano-bis-(1,10-phenanthroline)-iron(II) (1), 3-(4-amino-3-methylphenyl)-7-phenyl-benzo-[1,2-b:4,5-b']difuran-2,6-dione (2), and 4-tert-butyl-2-(dicyano-methylene)-5-[4-(diethylamino)-benzylidene]-Δ(3)-thiazoline (3) as solvatochromic probes were coadsorbed onto zinc oxide to measure various effects of surface polarity. The experimental findings showed that the adsorption mechanism of PVFA and PVFA-co-PVAm strongly depends on the degree of hydrolysis of PVFA and pH values and also on the kind of metal or metal oxide surfaces that were employed as adsorbents. The adsorption mechanism of PVFA/PVFA-co-PVAm onto zinc oxide and iron oxide surfaces is mainly affected by electrostatic interactions. Particularly in the region of pH 5, the adsorption of PVFA/PVFA-co-PVAm onto zinc and iron metal particles is additionally influenced by redox processes, dissolution, and complexation reactions.

  18. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  19. The influence of zinc chloride and zinc oxide nanoparticles on air-time survival in freshwater mussels.

    PubMed

    Gagné, François; Auclair, Joëlle; Peyrot, Caroline; Wilkinson, Kevin J

    2015-01-01

    The purpose of this study was to determine the cumulative effects of exposure to either dissolved zinc or nanozinc oxide (nanoZnO) and air-time survival in freshwater mussels. Mussels were exposed to each forms of zinc for 96h then placed in air to determine survival time. A sub-group of mussels before and after 7days of exposure to air were kept aside for the determination of the following biomarkers: arachidonate-dependent cyclooxygenase (COX) and peroxidase (inflammation and oxidative stress), lipid metabolism (total lipids, esterases activity, HO-glycerol, acetyl CoA and phospholipase A2) and lipid damage (lipid peroxidation [LPO]). The results showed that air-time survival was decreased from a mean value of 18.5days to a mean value of 12days in mussels exposed to 2.5mg/L of nanoZnO although it was not lethal based on shell opening at concentrations below 50mg/L after 96h. In mussels exposed to zinc only, the median lethal concentration was estimated at 16mg/L (10-25 95% CI). The air-time survival did not significantly change in mussels exposed to the same concentration of dissolved Zn. Significant weight losses were observed at 0.5mg/L of nanoZnO and at 2.5mg/L for dissolved zinc chloride, and were also significantly correlated with air-time survival (r=0.53; p<0.01). Air exposure significantly increased COX activity in control mussels and in mussels exposed to 0.5mg/L of nanoZnO and zinc chloride. The data also suggested fatty acid breakdown and β-oxidation. Mussels exposed to contaminants are more susceptible to prolonged exposure to air during low water levels.

  20. Infrared and infrared emission spectroscopy of gallium oxide alpha-GaO(OH) nanostructures.

    PubMed

    Yang, Jing Jeanne; Zhao, Yanyan; Frost, Ray L

    2009-10-01

    Infrared spectroscopy has been used to study nano- to micro-sized gallium oxyhydroxide alpha-GaO(OH), prepared using a low temperature hydrothermal route. Rod-like alpha-GaO(OH) crystals with average length of approximately 2.5 microm and width of 1.5 microm were prepared when the initial molar ratio of Ga to OH was 1:3. beta-Ga(2)O(3) nano and micro-rods were prepared through the calcination of alpha-GaO(OH). The initial morphology of alpha-GaO(OH) is retained in the beta-Ga(2)O(3) nanorods. The combination of infrared and infrared emission spectroscopy complimented with dynamic thermal analysis were used to characterise the alpha-GaO(OH) nanotubes and the formation of beta-Ga(2)O(3) nanorods. Bands at around 2903 and 2836 cm(-1) are assigned to the -OH stretching vibration of alpha-GaO(OH) nanorods. Infrared bands at around 952 and 1026 cm(-1) are assigned to the Ga-OH deformation modes of alpha-GaO(OH). A significant number of bands are observed in the 620-725 cm(-1) region and are assigned to GaO stretching vibrations.

  1. Infrared and infrared emission spectroscopy of gallium oxide alpha-GaO(OH) nanostructures.

    PubMed

    Yang, Jing Jeanne; Zhao, Yanyan; Frost, Ray L

    2009-10-01

    Infrared spectroscopy has been used to study nano- to micro-sized gallium oxyhydroxide alpha-GaO(OH), prepared using a low temperature hydrothermal route. Rod-like alpha-GaO(OH) crystals with average length of approximately 2.5 microm and width of 1.5 microm were prepared when the initial molar ratio of Ga to OH was 1:3. beta-Ga(2)O(3) nano and micro-rods were prepared through the calcination of alpha-GaO(OH). The initial morphology of alpha-GaO(OH) is retained in the beta-Ga(2)O(3) nanorods. The combination of infrared and infrared emission spectroscopy complimented with dynamic thermal analysis were used to characterise the alpha-GaO(OH) nanotubes and the formation of beta-Ga(2)O(3) nanorods. Bands at around 2903 and 2836 cm(-1) are assigned to the -OH stretching vibration of alpha-GaO(OH) nanorods. Infrared bands at around 952 and 1026 cm(-1) are assigned to the Ga-OH deformation modes of alpha-GaO(OH). A significant number of bands are observed in the 620-725 cm(-1) region and are assigned to GaO stretching vibrations. PMID:19577510

  2. Study of Gallium Oxide Nanoparticles Conjugated with β-Cyclodextrin: An Application To Combat Cancer.

    PubMed

    Ganguly, Bichitra Nandi; Verma, Vivek; Chatterjee, Debanuj; Satpati, Biswarup; Debnath, Sushanta; Saha, Partha

    2016-07-13

    Bioactive nanomaterials, namely, gallium oxyhydroxide GaO(OH), also surface-conjugated GaO(OH) with a giant sugar molecule β-cyclodextrin (CD), have been prepared through a simple wet chemical route such that the same could be suitably used in biomedical diagnostics as well as therapeutic applications. Several physical methods were used for their characterization: powder X-ray diffraction pattern of GaO(OH) NPs for their grain size determination, optical spectroscopic absorption (UV-vis and FT-IR), and fluorescence properties of these NPs to ascertain surface conjugation and also their wide band-gap properties. Besides these, morphological properties of these NPs were studied by transmission electron microscopic (TEM) investigation, justifying the elemental constitution through energy dispersive X-ray analysis (EDX). Further, biological cellular uptake of these nanoparticles have been demonstrated on cancerous HeLa cells and reported with total fetal effect after 72 h, with CD templated GaO(OH) nanoparticles, a fact that has not been reported so far.

  3. Study of Gallium Oxide Nanoparticles Conjugated with β-Cyclodextrin: An Application To Combat Cancer.

    PubMed

    Ganguly, Bichitra Nandi; Verma, Vivek; Chatterjee, Debanuj; Satpati, Biswarup; Debnath, Sushanta; Saha, Partha

    2016-07-13

    Bioactive nanomaterials, namely, gallium oxyhydroxide GaO(OH), also surface-conjugated GaO(OH) with a giant sugar molecule β-cyclodextrin (CD), have been prepared through a simple wet chemical route such that the same could be suitably used in biomedical diagnostics as well as therapeutic applications. Several physical methods were used for their characterization: powder X-ray diffraction pattern of GaO(OH) NPs for their grain size determination, optical spectroscopic absorption (UV-vis and FT-IR), and fluorescence properties of these NPs to ascertain surface conjugation and also their wide band-gap properties. Besides these, morphological properties of these NPs were studied by transmission electron microscopic (TEM) investigation, justifying the elemental constitution through energy dispersive X-ray analysis (EDX). Further, biological cellular uptake of these nanoparticles have been demonstrated on cancerous HeLa cells and reported with total fetal effect after 72 h, with CD templated GaO(OH) nanoparticles, a fact that has not been reported so far. PMID:27331869

  4. Zinc release from atomic layer deposited zinc oxide thin films and its antibacterial effect on Escherichia coli

    NASA Astrophysics Data System (ADS)

    Kääriäinen, M.-L.; Weiss, C. K.; Ritz, S.; Pütz, S.; Cameron, D. C.; Mailänder, V.; Landfester, K.

    2013-12-01

    Zinc oxide films have been grown by atomic layer deposition (ALD) at different reaction temperatures and in various thicknesses. Zinc-ion release has been examined from the ZnO films in water and in phosphate buffered saline solution (PBS). Additionally, the antibacterial effect has been studied on Escherichia coli. The thickness of the ZnO film or its crystal orientation did not affect the rate of dissolution. ALD grown aluminum oxide films were deposited on top of the ZnO films and they acted as an effective barrier against zinc dissolution. The bacteriostatic effect was not dependent on the film thickness but both 45 nm and 280 nm thick ZnO films significantly reduced bacterial attachment and growth in dark conditions by 99.7% and 99.5%, respectively. The results indicated that photoirradiation is not required for to enhance antibacterial properties of inorganic films and that the elution of zinc ions is probably responsible for the antibacterial properties of the ZnO films. The duration of the antibacterial effect of ZnO can be controlled by accurate control of the film thickness, which is a feature of ALD, and the onset of the antibacterial effect can be delayed by a time which can be adjusted by controlling the thickness of the Al2O3 blocking layer. This gives the possibility of obtaining dual antibacterial release profiles through a nanolaminate structure of these two materials.

  5. Rambutan peels promoted biomimetic synthesis of bioinspired zinc oxide nanochains for biomedical applications

    NASA Astrophysics Data System (ADS)

    Yuvakkumar, R.; Suresh, J.; Saravanakumar, B.; Joseph Nathanael, A.; Hong, Sun Ig; Rajendran, V.

    2015-02-01

    A naturally occurring rambutan peel waste was employed to synthesis bioinspired zinc oxide nanochains. Rambutan peels has the ability of ligating zinc ions as a natural ligation agent resulting in zinc oxide nanochains formation due to its extended polyphenolic system over incubation period. Successful formation of zinc oxide nanochains was confirmed employing transmission electron microscopy studies. About 60% and ∼40% cell viability was lost and 50% and 10% morphological change was observed in 7 and 4 days incubated ZnO treated cells compared with control. Moreover, 50% and 55% of cell death was observed at 24 and 48 h incubation with 7 days treated ZnO cells and hence alters and disturbs the growth of cancer cells and could be used for liver cancer cell treatment.

  6. Rambutan peels promoted biomimetic synthesis of bioinspired zinc oxide nanochains for biomedical applications.

    PubMed

    Yuvakkumar, R; Suresh, J; Saravanakumar, B; Joseph Nathanael, A; Hong, Sun Ig; Rajendran, V

    2015-02-25

    A naturally occurring rambutan peel waste was employed to synthesis bioinspired zinc oxide nanochains. Rambutan peels has the ability of ligating zinc ions as a natural ligation agent resulting in zinc oxide nanochains formation due to its extended polyphenolic system over incubation period. Successful formation of zinc oxide nanochains was confirmed employing transmission electron microscopy studies. About 60% and ∼40% cell viability was lost and 50% and 10% morphological change was observed in 7 and 4 days incubated ZnO treated cells compared with control. Moreover, 50% and 55% of cell death was observed at 24 and 48 h incubation with 7 days treated ZnO cells and hence alters and disturbs the growth of cancer cells and could be used for liver cancer cell treatment.

  7. Dechlorination of Zinc Oxide Dust from Waelz Kiln by Microwave Roasting

    NASA Astrophysics Data System (ADS)

    Li, Zhiqiang; Zhang, Libo; Ma, Aiyuan; Peng, Jinhui; Li, Jing; Liu, Chenhui

    2015-05-01

    The new technology of dechlorination from zinc oxide dust by microwave roasting was investigated, combined with the advantages of microwave selective heating and based on a thermodynamic analysis of zinc and lead halides. The associated dechlorination reactions were discussed in details and the effect of all the influencing parameters such as roasting temperature, holding time, stirring speed and air flow were systematically investigated. Experimental results showed that zinc oxide dust dechlorination rate could reach over 95% and meet the requirements of wet smelting electrolysis, given an air flow of 300 L/h, a stirring speed of 60 r/min, a roasting temperature of 650 °C and a holding time of 30 min. Microwave roasting provided a new solution to the dechlorination from zinc oxide dust.

  8. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  9. Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

    NASA Astrophysics Data System (ADS)

    Edleman, Nikki Lynn

    A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism

  10. Recovery of zinc from leach residues with minimum iron dissolution using oxidative leaching.

    PubMed

    Alizadeh, Reza; Rashchi, Fereshteh; Vahidi, Ehsan

    2011-02-01

    Leaching was performed to recover zinc from a zinc leach residue which contained 9.87% Zn and 4.93% Fe. During sulfuric acid leaching, Fe was dissolved as well as Zn which can reduce the Zn extraction efficiency. Leaching the residue in the presence of an oxidizing reagent such as hydrogen peroxide or manganese dioxide significantly reduced the iron content of the leach liquor. Effect of pH, temperature, solid/liquid ratio, reaction time and hydrogen peroxide or manganese dioxide concentration on the recovery of zinc and iron in non-oxidative and oxidative leaching conditions were investigated. By using the optimum oxidative leaching conditions, iron recovery reduced from 70% in non-oxidative leaching to 0.4 and 5% in the presence of MnO(2) and H(2)O(2), respectively, with acceptable Zn recovery. This reduction in the iron content was due to the different iron compounds formed at different conditions.

  11. Novel nanostructure zinc zirconate, zinc oxide or zirconium oxide pastes coated on fluorine doped tin oxide thin film as photoelectrochemical working electrodes for dye-sensitized solar cell.

    PubMed

    Hossein Habibi, Mohammad; Askari, Elham; Habibi, Mehdi; Zendehdel, Mahmoud

    2013-03-01

    Zinc zirconate (ZnZrO(3)) (ZZ), zinc oxide (ZnO) (ZO) and zirconium oxide (ZrO(2)) (ZRO) nano-particles were synthesized by simple sol-gel method. ZZ, ZO and ZRO nano-particles were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflectance spectrum (DRS). Nanoporous ZZ, ZO and ZRO thin films were prepared doctor blade technique on the fluorine-doped tin oxide (FTO) and used as working electrodes in dye sensitized solar cells (DSSC). Their photovoltaic behavior were compared with standard using D35 dye and an electrolyte containing [Co(bpy)(3)](PF(6))(2), [Co(pby)(3)](PF(6))(3), LiClO(4), and 4-tert-butylpyridine (TBP). The properties of DSSC have been studied by measuring their short-circuit photocurrent density (Jsc), open-circuit voltage (VOC) and fill factor (ff). The application of ZnZrO(3) as working electrode produces a significant improvement in the fill factor (ff) of the dye-sensitized solar cells (ff=56%) compared to ZnO working electrode (ff=40%) under the same condition.

  12. Zinc

    MedlinePlus

    ... deficiency also causes hair loss, diarrhea, eye and skin sores and loss of appetite. Weight loss, problems ... pneumonia and other infections. Zinc also helps the skin stay healthy. Some people who have skin ulcers ...

  13. Effect of zinc oxide amounts on the properties and antibacterial activities of zeolite/zinc oxide nanocomposite.

    PubMed

    Alswat, Abdullah A; Ahmad, Mansor Bin; Saleh, Tawfik A; Hussein, Mohd Zobir Bin; Ibrahim, Nor Azowa

    2016-11-01

    Nanocomposites of zinc oxide loaded on a zeolite (Zeolite/ZnO NCs) were prepared using co-precipitation method. The ratio effect of ZnO wt.% to the Zeolite on the antibacterial activities was investigated. Various techniques were used for the nanocomposite characterization, including UV-vis, FTIR, XRD, EDX, FESEM and TEM. XRD patterns showed that ZnO peak intensity increased while the intensities of Zeolite peaks decreased. TEM images indicated a good distribution of ZnO-NPs onto the Zeolite framework and the cubic structure of the zeolite was maintained. The average particle size of ZnO-nanoparticles loaded on the surface of the Zeolite was in the range of 1-10nm. Moreover, Zeolite/ZnO NCs showed noticeable antibacterial activities against the tested bacteria; Gram- positive and Gram- negative bacteria, under normal light. The efficiency of the antibacterial increased with increasing the wt.% from 3 to 8 of ZnO NPs, and it reached 87% against Escherichia coli E266.

  14. Comparison study of electrochemical properties of porous zinc oxide/N-doped carbon and pristine zinc oxide polyhedrons

    NASA Astrophysics Data System (ADS)

    Zhou, Zhenfang; Zhang, Kun; Liu, Jinghao; Peng, Hongrui; Li, Guicun

    2015-07-01

    An in-situ calcination strategy has been developed for the synthesis of porous zinc oxide/N-doped carbon (ZnO/NC) polyhedrons, in which zeolitic imidazolate framework-8 (ZIF-8) serves as the precursor. The ZnO/NC polyhedrons with a hierarchical architecture possess a high specific surface area of 390.7 m2 g-1, high nitrogen content (19.99 at%), and robust pore structures. The porous N-doped carbon frameworks can not only increase the electronic conductivity of ZnO, but also provide interior space for the fast diffusion of Li+ ions and accommodate the volume variations during the charge and discharge cycles. When evaluated for lithium storage capacity, the hierarchical ZnO/NC polyhedrons exhibit high reversible discharge capacity (834.3 mAh g-1 at the initial low rate of 0.5C, 1C = 978 mA g-1), superior rate performance (399.2 mAh g-1 at 5C and 253.5 mAh g-1 at 10C), and excellent cycling stability (677.9 mAh g-1 at 1C after 400 cycles). The reasons are explored in terms of the well-confined primary nanocrystals (5 nm), and the finely constructed interconnected pores of the N-doped carbon networks, which facilitate the fast and effective transfer of Li+ ions and electrons, and accommodate the large volume expansions.

  15. Effect of zinc oxide amounts on the properties and antibacterial activities of zeolite/zinc oxide nanocomposite.

    PubMed

    Alswat, Abdullah A; Ahmad, Mansor Bin; Saleh, Tawfik A; Hussein, Mohd Zobir Bin; Ibrahim, Nor Azowa

    2016-11-01

    Nanocomposites of zinc oxide loaded on a zeolite (Zeolite/ZnO NCs) were prepared using co-precipitation method. The ratio effect of ZnO wt.% to the Zeolite on the antibacterial activities was investigated. Various techniques were used for the nanocomposite characterization, including UV-vis, FTIR, XRD, EDX, FESEM and TEM. XRD patterns showed that ZnO peak intensity increased while the intensities of Zeolite peaks decreased. TEM images indicated a good distribution of ZnO-NPs onto the Zeolite framework and the cubic structure of the zeolite was maintained. The average particle size of ZnO-nanoparticles loaded on the surface of the Zeolite was in the range of 1-10nm. Moreover, Zeolite/ZnO NCs showed noticeable antibacterial activities against the tested bacteria; Gram- positive and Gram- negative bacteria, under normal light. The efficiency of the antibacterial increased with increasing the wt.% from 3 to 8 of ZnO NPs, and it reached 87% against Escherichia coli E266. PMID:27524047

  16. Microwave and millimeter wave dielectric permittivity and magnetic permeability of epsilon-gallium-iron-oxide nano-powders

    NASA Astrophysics Data System (ADS)

    Chao, Liu; Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2015-05-01

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe12O19) and strontium ferrite (SrFe12O19), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A series of gallium-substituted ɛ-iron oxides (ɛ-GaxFe2-xO3) are synthesized, which have ferromagnetic resonant frequencies appearing over the frequency range of 30 GHz to 150 GHz. The ɛ-GaxFe2-xO3 is synthesized by the sol-gel method. The particle sizes are observed to be smaller than 100 nm. In this paper, in-waveguide transmission and reflection method and the free space magneto-optical approach have been employed to study these newly developed ɛ-GaxFe2-xO3 particles in millimeter waves. These techniques enable to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the microwave and millimeter wave frequency range from single set of direct measurements. The complex dielectric permittivity and magnetic permeability spectra of ɛ-GaxFe2-xO3 are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  17. Nanomolar concentrations of zinc pyrithione increase cell susceptibility to oxidative stress induced by hydrogen peroxide in rat thymocytes.

    PubMed

    Oyama, Tomohiro M; Saito, Minoru; Yonezawa, Takayasu; Okano, Yoshiro; Oyama, Yasuo

    2012-06-01

    Zinc pyrithione is used as an antifouling agent. However, the environmental impacts of zinc pyrithione have recently been of concern. Zinc induces diverse actions during oxidative stress; therefore, we examined the effect of zinc pyrithione on rat thymocytes suffering from oxidative stress using appropriate fluorescent probes. The cytotoxicity of zinc pyrithione was not observed when the cells were incubated with 3 μM zinc pyrithione for 3 h. However, zinc pyrithione at nanomolar concentrations (10 nM or more) significantly increased the lethality of cells suffering from oxidative stress induced by 3 mM H(2)O(2). The application of zinc pyrithione alone at nanomolar concentrations increased intracellular Zn(2+) level and the cellular content of superoxide anions, and decreased the cellular content of nonprotein thiols. The simultaneous application of nanomolar zinc pyrithione and micromolar H(2)O(2) synergistically increased the intracellular Zn(2+) level. Therefore, zinc pyrithione at nanomolar concentrations may exert severe cytotoxic action on cells simultaneously exposed to chemicals that induce oxidative stress. If so, zinc pyrithione leaked from antifouling materials into surrounding environments would be a risk factor for aquatic ecosystems. Alternatively, zinc pyrithione under conditions of oxidative stress may become more potent antifouling ingredient. PMID:22356860

  18. Properties of aluminum gallium arsenide native oxides for integrated photonics and optoelectronics applications

    NASA Astrophysics Data System (ADS)

    Luo, Yong

    2001-12-01

    The properties of AlGaAs native oxides have been investigated and single heterostructure (SH) and double heterostructure (DH) native oxide planar waveguides have been realized. Prism coupling, secondary ion mass spectrometry (SIMS), Fourier transform infrared (FTIR) transmission spectroscopy and other techniques are used to characterize the oxide waveguides. Propagation losses are measured for SH native oxide waveguides. The presence of hydroxyl (OH) groups in AlGaAs native oxides is shown to slightly increase the waveguide loss at λ = 1.55 μm. The wet thermal oxidation process has been extensively investigated for AlxGa1-xAs over a wide range of Al compositions (0.3 < x < 0.9). An improvement in the process for oxidation of low Al composition AlxGa1-xAs (x < 0.8) has been achieved by controllably adding trace quantities of O2 to the N 2 + H2O process gas. The complicated effects of O2 + N2 ``mixed carrier gas'' on oxidation rates and the surface quality of oxides have been investigated and applied to reduce the propagation loss of a SH waveguide. The role of added O2 has been analyzed in relation to the possible chemical reactions involved. The effects of mixed carrier gas on the lateral oxidation of Al0.98Ga 0.02As is also explored but shown to be negligible. Two modified AlGaAs SHs designed for reduced planar oxide waveguide propagation loss have also been processed and characterized, with losses as low as 4 dB/cm at λ = 1.55 μm achieved. Finally, in other experimental results it is shown that ``deep-oxidation'' (i.e., through a quantum well heterostructure (QWH) containing a low Al composition waveguide and GaAs quantum well) can be attained by using controllably-mixed O2 + N2 carrier gas, which effectively modifies the oxidation rate selectivity between high and low x AlxGa1-xAs. This achievement eliminates the need for the additional impurity induced layer disordering (IILD) process step used in prior deep- oxidation technology to intermix high and low x

  19. Preparation of gadolinium gallium garnet (Gd/sub 3/Ga/sub 5/O/sub 12/) by solid-state reaction of the oxides

    SciTech Connect

    Hellstrom, E.E.; Ray, R.D. II; Zhang, C. )

    1989-08-01

    The authors prepared dense polycrystalline gadolinium gallium garnet (GGG) by solid-state reaction of the oxides. The oxides were prereacted at 1350{sup 0}C, ground, pressed, and sintered at 1650{sup 0}C, yielding 97% dense samples, Ga/sub 2/O/sub 3/ evaporated from the sample surface leaving Gd/sub 4/Ga/sub 2/O/sub 9/ that could spall off the sample. For the short times needed to sinter samples, the bulk composition of the material remained essentially constant. The microhardness of the GGG was 11.8 +- 1.2 GN . m/sup -2/.

  20. Surface Functionalization of Oxide-Covered Zinc and Iron with Phosphonated Phenylethynyl Phenothiazine.

    PubMed

    Rechmann, Julian; Sarfraz, Adnan; Götzinger, Alissa C; Dirksen, Elena; Müller, Thomas J J; Erbe, Andreas

    2015-07-01

    Phenothiazines are redox-active, fluorescent molecules with potential applications in molecular electronics. Phosphonated phenylethynyl phenothiazine can be easily obtained in a four-step synthesis, yielding a molecule with a headgroup permitting surface linkage. Upon modifying hydroxylated polycrystalline zinc and iron, both covered with their respective native oxides, ultrathin organic layers were formed and investigated by use of infrared (IR) reflection spectroscopy, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), contact angle measurement, and ellipsometry. While stable monolayers with upright oriented organic molecules were formed on oxide-covered iron, multilayer formation is observed on oxide-covered zinc. ToF-SIMS measurements reveal a bridging bidentate bonding state of the organic compound on oxide-covered iron, whereas monodentate complexes were observed on oxide-covered zinc. Both organically modified and unmodified surfaces exhibit reactive wetting, but organic modification makes the surfaces initially more hydrophobic. Cyclic voltammetry (CV) indicates redox activity of the multilayers formed on oxide-covered zinc. On the other hand, the monolayers on oxide-covered iron desorb after electrochemical modifications in the state of the oxide, but are stable at open circuit conditions. Exploiting an electronic coupling of phenothiazines to oxides may thus assist in corrosion protection.

  1. Gallium complexes and solvent extraction of gallium

    SciTech Connect

    Coleman, J.P.; Graham, C.R.; Monzyk, B.F.

    1988-05-03

    This patent describes a process for recovering gallium from aqueous solutions containing gallium which comprises contacting such a solution with an organic solvent containing at least 2% by weight of a water-insoluble N-organo hydroxamic acid having at least about 8 carbon atoms to extract gallium, and separating the gallium loaded organic solvent phase from the aqueous phase.

  2. Zinc oxide nanoparticle induced genotoxicity in primary human epidermal keratinocytes.

    PubMed

    Sharma, Vyom; Singh, Suman K; Anderson, Diana; Tobin, Desmond J; Dhawan, Alok

    2011-05-01

    Zinc oxide (ZnO) nanoparticles are widely used in cosmetics and sunscreens. Human epidermal keratinocytes may serve as the first portal of entry for these nanoparticles either directly through topically applied cosmetics or indirectly through any breaches in the skin integrity. Therefore, the objective of the present study was to assess the biological interactions of ZnO nanoparticles in primary human epidermal keratinocytes (HEK) as they are the most abundant cell type in the human epidermis. Cellular uptake of nanoparticles was investigated by scanning electron microscopy using back scattered electrons imaging as well as transmission electron microscopy. The electron microscopy revealed the internalization of ZnO nanoparticles in primary HEK after 6 h exposure at 14 microg/ml concentration. ZnO nanoparticles exhibited a time (6-24 h) as well as concentration (8-20 microg/ml) dependent inhibition of mitochondrial activity as evident by the MTT assay. A significant (p < 0.05) induction in DNA damage was observed in cells exposed to ZnO nanoparticles for 6 h at 8 and 14 microg/ml concentrations compared to control as evident in the Comet assay. This is the first study providing information on biological interactions of ZnO nanoparticles with primary human epidermal keratinocytes. Our findings demonstrate that ZnO nanoparticles are internalized by the human epidermal keratinocytes and elicit a cytotoxic and genotoxic response. Therefore, caution should be taken while using consumer products containing nanoparticles as any perturbation in the skin barrier could expose the underlying cells to nanoparticles.

  3. Alveolar Epithelial Cell Injury Due to Zinc Oxide Nanoparticle Exposure

    PubMed Central

    Kim, Yong Ho; Fazlollahi, Farnoosh; Kennedy, Ian M.; Yacobi, Nazanin R.; Hamm-Alvarez, Sarah F.; Borok, Zea; Kim, Kwang-Jin; Crandall, Edward D.

    2010-01-01

    Rationale: Although inhalation of zinc oxide (ZnO) nanoparticles (NPs) is known to cause systemic disease (i.e., metal fume fever), little is known about mechanisms underlying injury to alveolar epithelium. Objectives: Investigate ZnO NP–induced injury to alveolar epithelium by exposing primary cultured rat alveolar epithelial cell monolayers (RAECMs) to ZnO NPs. Methods: RAECMs were exposed apically to ZnO NPs or, in some experiments, to culture fluid containing ZnCl2 or free Zn released from ZnO NPs. Transepithelial electrical resistance (RT) and equivalent short-circuit current (IEQ) were assessed as functions of concentration and time. Morphologic changes, lactate dehydrogenase release, cell membrane integrity, intracellular reactive oxygen species (ROS), and mitochondrial activity were measured. Measurements and Main Results: Apical exposure to 176 μg/ml ZnO NPs decreased RT and IEQ of RAECMs by 100% over 24 hours, whereas exposure to 11 μg/ml ZnO NPs had little effect. Changes in RT and IEQ caused by 176 μg/ml ZnO NPs were irreversible. ZnO NP effects on RT yielded half-maximal concentrations of approximately 20 μg/ml. Apical exposure for 24 hours to 176 μg/ml ZnO NPs induced decreases in mitochondrial activity and increases in lactate dehydrogenase release, permeability to fluorescein sulfonic acid, increased intracellular ROS, and translocation of ZnO NPs from apical to basolateral fluid (most likely across injured cells and/or damaged paracellular pathways). Conclusions: ZnO NPs cause severe injury to RAECMs in a dose- and time-dependent manner, mediated, at least in part, by free Zn released from ZnO NPs, mitochondrial dysfunction, and increased intracellular ROS. PMID:20639441

  4. Curcumin Attenuates Hepatotoxicity Induced by Zinc Oxide Nanoparticles in Rats

    PubMed Central

    Khorsandi, Layasadat; Mansouri, Esrafil; Orazizadeh, Mahmoud; Jozi, Zahra

    2016-01-01

    Background: Zinc oxide nanoparticles (NZnO) are increasingly used in modern life. Most metal nanoparticles have adverse effects on the liver. Aims: To explore the protective action of curcumin (Cur) against hepatotoxicity induced by NZnO in rats. Study Design: Animal experimentation. Methods: Control group animals received normal saline, while the Cur group animals were treated with 200 mg/kg of Cur orally for 21 days. NZnO-intoxicated rats received 50 mg/kg of NZnO for 14 days by gavage method. In the NZnO+Cur group, rats were pretreated with Cur for 7 days before NZnO administration. Plasma activities of Alanine aminotransferase (ALT), aspartate aminotransferase (AST) and alkaline phosphatase (ALP) were measured as biomarkers of hepatotoxicity. Hepatic levels of malondialdehyde (MDA) and superoxide dismutase (SOD) and glutathione peroxidase (GPx) activities were measured for detection of oxidative stress in liver tissue. Histological changes and apoptosis in liver tissue were studied by using Hematoxylin-eosin staining and the transferase dUTP nick end labeling (TUNEL) method. Results: NZnO induced a significant increase in plasma AST (2.8-fold), ALT (2.7-fold) and ALP (1.97-fold) activity in comparison to the control group (p<0.01). NZnO increased MDA content and reduced SOD and GPx activities. NZnO caused liver damage including centrilobular necrosis and microvesicular steatosis. The percentage of apoptosis in hepatocytes was increased in NZnO-treated rats (p<0.01). Pre-treatment of Cur significantly reduced lipid peroxidation (39%), increased SOD (156%) and GPx (26%) activities, and attenuated ALT (47%), AST (41%) and ALP (30%) activities. Pre-treatment with Cur also decreased the histology changes and apoptotic index of hepatocytes (p<0.05). Conclusion: These findings indicate that Cur effectively protects against NZnO-induced hepatotoxicity in rats. However, future studies are required to propose Cur as a potential protective agent against hepatotoxicity

  5. Hot gas desulfurization with oxides of zinc, iron, and vanadium

    SciTech Connect

    Akyurtlu, J.F.; Akyurtlu, A.

    1992-08-01

    The objective of this study is to develop an improved sorbent which can reduce H{sub 2}S levels up to 1 ppmv or less, which can stabilize zinc, and produce economically recoverable amounts of elemental sulfur during regeneration. For this purpose, the desulfurization performance of sorbents prepared by the addition of various amounts of V{sub 2}O{sub 5} to the zinc ferrite sorbent is investigated.

  6. Antibacterial properties of composite resins incorporating silver and zinc oxide nanoparticles on Streptococcus mutans and Lactobacillus

    PubMed Central

    Kasraei, Shahin; Sami, Lida; Hendi, Sareh; AliKhani, Mohammad-Yousef; Rezaei-Soufi, Loghman

    2014-01-01

    Objectives Recurrent caries was partly ascribed to lack of antibacterial properties in composite resin. Silver and zinc nanoparticles are considered to be broad-spectrum antibacterial agents. The aim of the present study was to evaluate the antibacterial properties of composite resins containing 1% silver and zinc-oxide nanoparticles on Streptococcus mutans and Lactobacillus. Materials and Methods Ninety discoid tablets containing 0%, 1% nano-silver and 1% nano zinc-oxide particles were prepared from flowable composite resin (n = 30). The antibacterial properties of composite resin discs were evaluated by direct contact test. Diluted solutions of Streptococcus mutans (PTCC 1683) and Lactobacillus (PTCC 1643) were prepared. 0.01 mL of each bacterial species was separately placed on the discs. The discs were transferred to liquid culture media and were incubated at 37℃ for 8 hr. 0.01 mL of each solution was cultured on blood agar and the colonies were counted. Data was analyzed with Kruskall-Wallis and Mann-Whitney U tests. Results Composites containing nano zinc-oxide particles or silver nanoparticles exhibited higher antibacterial activity against Streptococcus mutans and Lactobacillus compared to the control group (p < 0.05). The effect of zinc-oxide on Streptococcus mutans was significantly higher than that of silver (p < 0.05). There were no significant differences in the antibacterial activity against Lactobacillus between composites containing silver nanoparticles and those containing zinc-oxide nanoparticles. Conclusions Composite resins containing silver or zinc-oxide nanoparticles exhibited antibacterial activity against Streptococcus mutans and Lactobacillus. PMID:24790923

  7. Effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in streptozotocin-induced diabetic rats

    PubMed Central

    Asri-Rezaei, Siamak; Tamaddonfard, Esmaeal; Ghasemsoltani-Momtaz, Behnaz; Erfanparast, Amir; Gholamalipour, Sima

    2015-01-01

    Objectives: Crocin is one of constituents of saffron and has antioxidant property. Zinc chloride is one of the common compounds of zinc with antioxidant activity. The present study was aimed to investigate separate and combined treatment effects of crocin and zinc chloride on blood levels of zinc and metabolic and oxidative parameters in diabetic rats. Materials and Methods: Diabetes was induced by intraperitoneal (i.p.) injection of 50 mg/kg of streptozotocin (STZ) and was confirmed by blood glucose levels higher than 250 mg/dL. After confirmation of diabetes, injections (i.p.) of crocin and zinc chloride were performed for six weeks. At the end of the experiment, blood levels of zinc, glucose, insulin, malodialdehyde (MDA), and total antioxidant capacity (TAC) were measured. ‎ Results: Crocin (25 and 50 mg/kg) and zinc chloride (5 mg/kg) significantly recovered the decreased levels of zinc, insulin, and TAC and improved the increased levels of glucose and MDA in STZ-induced diabetic rats. In a combination treatment performed with an ineffective dose of crocin (12.5 mg/kg) and a low dose of zinc chloride (1.25 mg/kg), improving effects were observed on the above-mentioned biochemical parameters.‎ Conclusion: The results indicated that separate and combined treatments with crocin and zinc chloride produced improving effects on the blood levels of zinc, glucose, insulin, MDA and TAC in STZ-induced diabetic rats. PMID:26468459

  8. X-ray studies of III-V native oxide/gallium arsenide interface

    NASA Astrophysics Data System (ADS)

    Cheong, Seong-Kyun

    Three x-ray techniques have been employed to study wet-thermal native oxides of AlGaAs on GaAs. For these materials, a knowledge of the role of As at the interface is important for understanding Fermi-level pinning and is a central issue in efforts to develop high performance III-V MOSFET devices. This study is focused on how the As is incorporated at the interface, the interfacial strain, and related local structural parameters. X-ray absorption fine-structure spectroscopy (XAFS) was used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ˜0.5 mum oxide film removed from its GaAs substrate, the remaining As atoms were found to be coordinated with oxygen in the form of amorphous As oxides, with a mixture of ˜80% As3+ and ˜20% As 5+ sites. These two sites are locally similar to As2O 3 and As2O5. Through this measurement, no evidence of interstitial or substitutional As, As precipitates, or GaAs was seen, implying that less than 10% of the As atoms are in these forms. To characterize the oxide structure in both the oxide film and the interfacial region, x-ray reflectivity and reflection-mode XAFS experiments were performed for a thin (300 A) oxidized AlxGa1-xAs (x = 0.96) film grown on GaAs. X-ray reflectivity studies showed that the composition of the surface oxidized film is not homogeneous as a function of depth. Reflection-mode XAFS, which uses the total external reflection of x-rays to confine an x-ray beam to the interfacial region, provided details of the local environment of As atoms at the interface of the oxide/GaAs. Analysis through this technique revealed that As atoms are in the form of mixed As oxides, with the local environment appearing to resemble As2O3 and As 2O5 in the interfacial region, which is consistent with the above observation from the isolated oxide film.

  9. Optical properties of erbium-doped aluminum-gallium-arsenide native oxides

    NASA Astrophysics Data System (ADS)

    Kou, Leigang

    In this study, native oxides of Al-bearing III-V compound semiconductors are explored as a host material for erbium ions with potential for integration in the AlGaAs alloy system. Using room temperature photoluminescence and lifetime measurements, the AlGaAs native oxide has been shown to be a much better host for Er 3+ than the unoxidized semiconductors themselves. Furthermore, various luminescence quench ing mechanisms, including arsenic quenching, hydroxyl (OH) group quenching and concentration quenching, are investigated in order to optimize the process. Ampoule annealing with arsenic overpressure has been used to show the effect of arsenic quenching. Fourier transform infrared (FTIR) transform spectra of oxide films thermally oxidized in water (H2O) vapor reveal the existence of OH groups, which act as luminescence quenching centers. However, such OH groups may not be intrinsic to the wet oxidation process, but appear instead to come primarily from the adsorption of moisture from the atmosphere due to the porous nature of the native oxide and strong affinity of OH radical to the oxide. This is supported by the fact that FTIR spectra of oxide films oxidized in deuterated water (D2O) show the presence of OH groups instead of OD groups. In order to fabricate an Er-doped planar waveguide amplifier, a high Er concentration is essential. However, the photoluminescence intensity of Er3+ does not increase linearly as the Er concentration increases because the shorter distance among Er 3+ ions introduces strong ion-ion interactions which reduce the excited Er3+ ion population through non-radiative transitions. High-temperature annealing has been employed as an effective post-processing step to activate Er3+ ions and remove OH groups. The annealing process parameters (temperature, time and gas ambient) have been optimized. The optimal annealing temperature, however, is reduced by arsenic quenching mechanism particular to AlGaAs oxide/semiconductor system. The oxidation

  10. Comparison of Calcium Phosphate and Zinc Oxide Nanoparticles as Dermal Penetration Enhancers for Albumin.

    PubMed

    Shokri, Narges; Javar, H A

    2015-01-01

    Dermal drug delivery is highly preferred by patients due to its several advantages. Protein therapeutics have attracted huge attention recently. Since dermal delivery of proteins encounter problems, in this investigation, zinc oxide nanoparticles and calcium phosphate nanoparticles were compared as enhancers for dermal permeation of albumin. Albumin was applied simultaneously with zinc oxide nanoparticles or calcium phosphate nanoparticles on pieces of mouse skin. Skin permeation of albumin over time was determined using a diffusion cell. Skin distribution of the nanoparticles and albumin over time was determined by optical and fluorescence microscopy. Zinc oxide nanoparticles and calcium phosphate nanoparticles acted as enhancers for skin permeation of albumin. Cumulative permeated albumin in presence of zinc oxide nanoparticles after 0, 0.5, 1, 1.5 and 2 h, were 0±0, 11.7±3.3, 21.1±3.5, 40.2±3.6 and 40.2±3.6 mg, respectively and in presence of calcium phosphate nanoparticles were 0±0, 20.9±7.4, 33.8±5.5, 33.8±3.7 and 33.8±3.7 mg, respectively. After 0.5 h, little amount of albumin was permeated in presence of every kind of the nanoparticles. After 0.5 or 1 h, the permeated albumin in presence of calcium phosphate nanoparticles was more than that in presence of zinc oxide nanoparticles and after 1.5 h the permeated albumin in presence of zinc oxide nanoparticles was more than that in presence of calcium phosphate nanoparticles. Images of skin distribution of the two nanoparticles over time, were somewhat different and distribution of albumin correlated with the distribution of the nanoparticles alone. The profiles of albumin permeation (in presence of each of the nanoparticles) versus time was delayed and linear for both nanoparticles while the slope for calcium phosphate nanoparticles was higher than zinc oxide nanoparticles. The enhancer effect of zinc oxide nanoparticles was stronger while the enhancer effect of calcium phosphate nanoparticles was

  11. Solubility of nano-zinc oxide in environmentally and biologically important matrices

    PubMed Central

    Reed, Robert B.; Ladner, David A.; Higgins, Christopher P.; Westerhoff, Paul; Ranville, James F.

    2011-01-01

    Increasing manufacture and use of engineered nanoparticles (NPs) is leading to a greater probability for release of ENPs into the environment and exposure to organisms. In particular, zinc oxide (ZnO) is toxic, although it is unclear whether this toxicity is due to the zinc oxide nanoparticles (ZnO), dissolution to Zn2+, or some combination thereof. The goal of this study was to determine the relative solubilites of both commercially available and in-house synthesized ZnO in matrices used for environmental fate and transport or biological toxicity studies. Dissolution of ZnO was observed in nanopure water (7.18– 7.40 mg/L dissolved Zn, as measured by filtration) and Roswell Park Memorial Institute medium (RPMI-1640) (~5 mg/L), but much more dissolution was observed in Dulbecco’s Modified Eagle’s Medium (DMEM), where the dissolved Zn concentration exceeded 34 mg/L. Moderately hard water exhibited low zinc solubility, likely due to precipitation of a zinc carbonate solid phase. Precipitation of a zinc-containing solid phase in RPMI also appeared to limit zinc solubility. Equilibrium conditions with respect to ZnO solubility were not apparent in these matrices, even after more than 1,000 h of dissolution. These results suggest that solution chemistry exerts a strong influence on ZnO dissolution and can result in limits on zinc solubility due to precipitation of less soluble solid phases. PMID:21994124

  12. Properties of Transparent Zinc-Tin Oxide Conducting Films Prepared by Chemical Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Martinez, Arturo I.; Garcia, Benjamin A.; Acosta, Dwight R.

    2005-06-01

    In this work we have prepared thin films of zinc-tin oxide by the chemical spray pyrolysis method. The structural, electrical and optical properties were studied for all films as a function of the zinc content in the starting solution, yielding values of electrical resistivity (ρ), Hall mobility (μ), carrier concentration (n), and optical transmission (T) suitable for optoelectronic applications, e.g. our optimal values were ρ = 3.56×10-2 Ω cm and T = 0.77.

  13. Recovering gallium from residual bayer process liquor

    NASA Astrophysics Data System (ADS)

    Afonso de Magalhães, Maria Elizabeth; Tubino, Matthieu

    1991-06-01

    Gallium is normally obtained by direct electrolysis as a by-product from Bayer process residual liquor at an aluminum processing plant. However, to permit any net accumulation of the metal, the gallium concentration must be at least about 0.3 g/l in the liquor. This article describes a continuous process of extraction with organic solvents and rhodamine-B, followed by a re-extraction step into aqueous media. The final product is a solid containing up to 18 wt.% Ga in a solid mixture of hydroxides and oxides of gallium and aluminum. This final product can then be electrolyzed to recover the gallium more efficiently.

  14. Enhanced ionic polymer metal composite actuator with porous nafion membrane using zinc oxide particulate leaching method

    NASA Astrophysics Data System (ADS)

    Jung, Sun Yong; Ko, Seong Young; Park, Jong-Oh; Park, Sukho

    2015-03-01

    In this study, to improve the performance of an ionic polymer metal composite (IPMC), we suggest a porous nafion membrane fabricated with the particulate leaching method with zinc oxide and propose an IPMC that uses the porous nafion membrane. To fabricate this membrane, the proper ratio of nafion and zinc oxide powder is dispersed in a solvent. Then the zinc oxide embedded in the nafion membrane is fabricated with a casting method. With the particulate leaching method, the embedded zinc oxide particles are dissolved by an acid solution, and the spaces of the zinc oxide particles changed to pores. Finally, through electroless plating and ion exchange procedures, an IPMC with the porous nafion membrane is fabricated. The proposed IPMC has higher water uptake (WUP) and ion exchange capacity (IEC) and can show better actuation performance compared to the conventional nafion-based IPMC. We also measure the actuation displacement and blocking forces of the proposed IPMC. Compared with the conventional nafion-based IPMC, the proposed IPMC with the porous nafion membrane has increased displacements: about 80% at ac input and about 250% at dc input, and increased blocking force about 130% at dc input.

  15. Antidiabetic activity of zinc oxide and silver nanoparticles on streptozotocin-induced diabetic rats.

    PubMed

    Alkaladi, Ali; Abdelazim, Aaser Mohamed; Afifi, Mohamed

    2014-01-01

    The use of nanoparticles in medicine is an attractive proposition. In the present study, zinc oxide and silver nanoparticles were evaluated for their antidiabetic activity. Fifty male albino rats with weight 120 ± 20 and age 6 months were used. Animals were grouped as follows: control; did not receive any type of treatment, diabetic; received a single intraperitoneal dose of streptozotocin (100 mg/kg), diabetic + zinc oxide nanoparticles (ZnONPs), received single daily oral dose of 10 mg/kg ZnONPs in suspension, diabetic + silver nanoparticles (SNPs); received a single daily oral dose of SNP of 10 mg/kg in suspension and diabetic + insulin; received a single subcutaneous dose of 0.6 units/50 g body weight. Zinc oxide and silver nanoparticles induce a significant reduced blood glucose, higher serum insulin, higher glucokinase activity higher expression level of insulin, insulin receptor, GLUT-2 and glucokinase genes in diabetic rats treated with zinc oxide, silver nanoparticles and insulin. In conclusion, zinc oxide and sliver nanoparticles act as potent antidiabetic agents. PMID:24477262

  16. Preliminary study on zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction

    NASA Astrophysics Data System (ADS)

    Wen, Yue-Hua; Cheng, Jie; Ning, Shang-Qi; Yang, Yu-Sheng

    A zinc-air battery using zinc regeneration electrolysis with propanol oxidation as a counter electrode reaction is reported in this paper. It possesses functions of both zincate reduction and electrochemical preparation, showing the potential for increasing the electronic energy utilization. Charge/discharge tests and scanning electron microscopy (SEM) micrographs reveal that when a nickel sheet plated with the high-H 2-overpotential metal, cadmium, was used as the negative substrate electrode, the dendritic formation and hydrogen evolution are suppressed effectively, and granular zinc deposits become larger but relatively dense with the increase of charge time. The performance of batteries is favorable even if the charge time is as long as 5 h at the current density of 20 mA cm -2. Better discharge performance is achieved using a 'cavity-opening' configuration for the discharge cell rather than a 'gas-introducing' configuration. The highest energy efficiency is up to 59.2%. That is, the energy consumed by organic electro-synthesis can be recovered by 59.2%. Cyclic voltammograms show that the sintered nickel electrode exhibits a good electro-catalysis activity for the propanol oxidation. The increase of propanol concentration conduces to an enhancement in the organic electro-synthesis efficiency. The organic electro-synthesis current efficiency of 82% can be obtained.

  17. Sorption behavior of microamounts of zinc on titanium oxide from aqueous solutions

    SciTech Connect

    Hasany, S.M.; Ghaffar, A. ); Chughtai, F.A. )

    1991-08-01

    To correlate soil response toward zinc, it is necessary to study its adsorption in detail on soils or on their constituents. The adsorption of microamounts of zinc on titanium oxide, prepared and characterized in this laboratory, has been studied in detail. Zinc adsorption has been found to be dependent on the pH of the aqueous solution, amount of oxide, and zinc concentration. Maximum adsorption is from pH 10 buffer. EDTA and cyanide ions inhibit adsorption significantly. The adsorption of other elements under optimal conditions has also been measured on this oxide. Sc(III) and Cs(I) show almost negligible adsorption. Zinc adsorption follows the linear form of the Freundlich adsorption isotherm: log C{sub Ads} = log A + (1/n) log C{sub Bulk} with A = 0.48 mol/g and n = 1. Except at a very low bulk concentration (3 {times} 10{sup {minus}5} mol/dm{sup 3}), Langmuir adsorption isotherm is also linear for the entire zinc concentration investigated. The limiting adsorbed concentration is estimated to be 0.18 mol/g.

  18. Zinc (hydr)oxide/graphite oxide/AuNPs composites: role of surface features in H₂S reactive adsorption.

    PubMed

    Giannakoudakis, Dimitrios A; Bandosz, Teresa J

    2014-12-15

    Zinc hydroxide/graphite oxide/AuNPs composites with various levels of complexity were synthesized using an in situ precipitation method. Then they were used as H2S adsorbents in visible light. The materials' surfaces were characterized before and after H2S adsorption by various physical and chemical methods (XRD, FTIR, thermal analysis, potentiometric titration, adsorption of nitrogen and SEM/EDX). Significant differences in surface features and synergistic effects were found depending on the materials' composition. Addition of graphite oxide and the deposition of gold nanoparticles resulted in a marked increase in the adsorption capacity in comparison with that on the zinc hydroxide and zinc hydroxide/AuNP. Addition of AuNPs to zinc hydroxide led to a crystalline ZnO/AuNP composite while the zinc hydroxide/graphite oxide/AuNP composite was amorphous. The ZnOH/GO/AuNPs composite exhibited the greatest H2S adsorption capacity due to the increased number of OH terminal groups and the conductive properties of GO that facilitated the electron transfer and consequently the formation of superoxide ions promoting oxidation of hydrogen sulfide. AuNPs present in the composite increased the conductivity, helped with electron transfer to oxygen, and prevented the fast recombination of the electrons and holes.

  19. Direct in situ measurement of dissolved zinc in the presence of zinc oxide nanoparticles using anodic stripping voltammetry.

    PubMed

    Jiang, Chuanjia; Hsu-Kim, Heileen

    2014-11-01

    The wide use of metal-based nanomaterials such as zinc oxide (ZnO) nanoparticles (NPs) has generated concerns regarding their environmental and health risks. For ZnO NPs, their toxicity in aquatic systems often depends on the release of dissolved zinc species, and the rate of dissolution is influenced by water chemistry, including the presence of zinc-chelating ligands. A challenge, however, remains in quantifying the dissolution of ZnO NPs, particularly for time scales that are short enough to determine rates. This paper reports the application of anodic stripping voltammetry (ASV) with a hanging mercury drop electrode to directly measure the concentration of dissolved zinc in ZnO NP suspensions, without separation of the ZnO NPs from the aqueous phase. The effects of the deposition time and the electrochemical potential scan rate on the ASV measurement were consistent with expectations for dissolved phase measurements. The dissolved zinc concentration measured by ASV ([Zn]ASV) was compared with that measured by inductively coupled plasma mass spectrometry (ICP-MS) after ultracentrifugation ([Zn]ICP-MS), for four types of ZnO NPs with different coatings and primary particle diameters. For small ZnO NPs (4-5 nm), [Zn]ASV was 20% higher than [Zn]ICP-MS, suggesting that these small NPs contributed to the voltammetric measurement. For larger ZnO NPs (approximately 20 nm), [Zn]ASV was (79 ± 19)% of [Zn]ICP-MS, despite the high concentrations of ZnO NPs in suspension. Using ASV, the dissolution of ZnO NPs was studied, with or without Suwannee River Fulvic Acid (SRFA). Although SRFA diminished the ASV stripping current, dissolution of 20 nm ZnO NPs was significantly promoted at high fulvic acid to ZnO NP ratios. The ASV method described in this paper provides a useful tool for studying the dissolution kinetics of ZnO NPs in complex environmental matrices.

  20. N + doping of gallium arsenide by rapid thermal oxidation of a silicon cap

    NASA Astrophysics Data System (ADS)

    Sadana, D. K.; de Souza, J. P.; Cardone, F.

    1990-10-01

    Shallow (<200 nm) Si profiles with doping levels in excess of 2×1018 cm-3 were reproducively obtained in GaAs by rapid thermal oxidation (RTO) of Si caps (50 or 160 nm) in 0.1% O2/Ar ambient at 850-1050 °C. The doping level as well as distribution of the diffused Si can be controlled by the thickness of the Si cap, RTO temperature, RTO time, and oxygen level in the annealing ambient. It appears that the generation of Si interstitials at the oxidizing surface of the Si cap during RTO is responsible for the Si diffusion into the underlying GaAs substrate.

  1. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    PubMed

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT. PMID:27129687

  2. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    PubMed

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  3. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

    NASA Astrophysics Data System (ADS)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-04-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  4. Zinc Oxide Nanoparticles Affect Biomass Accumulation and Photosynthesis in Arabidopsis.

    PubMed

    Wang, Xiaoping; Yang, Xiyu; Chen, Siyu; Li, Qianqian; Wang, Wei; Hou, Chunjiang; Gao, Xiao; Wang, Li; Wang, Shucai

    2015-01-01

    Dramatic increase in the use of nanoparticles (NPs) in a variety of applications greatly increased the likelihood of the release of NPs into the environment. Zinc oxide nanoparticles (ZnO NPs) are among the most commonly used NPs, and it has been shown that ZnO NPs were harmful to several different plants. We report here the effects of ZnO NPs exposure on biomass accumulation and photosynthesis in Arabidopsis. We found that 200 and 300 mg/L ZnO NPs treatments reduced Arabidopsis growth by ∼20 and 80%, respectively, in comparison to the control. Pigments measurement showed that Chlorophyll a and b contents were reduced more than 50%, whereas carotenoid contents remain largely unaffected in 300 mg/L ZnO NPs treated Arabidopsis plants. Consistent with this, net rate of photosynthesis, leaf stomatal conductance, intercellular CO2 concentration and transpiration rate were all reduced more than 50% in 300 mg/L ZnO NPs treated plants. Quantitative RT-PCR results showed that expression levels of chlorophyll synthesis genes including CHLOROPHYLL A OXYGENASE (CAO), CHLOROPHYLL SYNTHASE (CHLG), COPPER RESPONSE DEFECT 1 (CRD1), MAGNESIUM-PROTOPORPHYRIN IX METHYLTRANSFERASE (CHLM) and MG-CHELATASE SUBUNIT D (CHLD), and photosystem structure gene PHOTOSYSTEM I SUBUNIT D-2 (PSAD2), PHOTOSYSTEM I SUBUNIT E-2 (PSAE2), PHOTOSYSTEM I SUBUNIT K (PSAK) and PHOTOSYSTEM I SUBUNIT K (PSAN) were reduced about five folds in 300 mg/L ZnO NPs treated plants. On the other hand, elevated expression, though to different degrees, of several carotenoids synthesis genes including GERANYLGERANYL PYROPHOSPHATE SYNTHASE 6 (GGPS6), PHYTOENE SYNTHASE (PSY) PHYTOENE DESATURASE (PDS), and ZETA-CAROTENE DESATURASE (ZDS) were observed in ZnO NPs treated plants. Taken together, these results suggest that toxicity effects of ZnO NPs observed in Arabidopsis was likely due to the inhibition of the expression of chlorophyll synthesis genes and photosystem structure genes, which results in the inhibition of

  5. Zinc Oxide Nanoparticles Affect Biomass Accumulation and Photosynthesis in Arabidopsis

    PubMed Central

    Wang, Xiaoping; Yang, Xiyu; Chen, Siyu; Li, Qianqian; Wang, Wei; Hou, Chunjiang; Gao, Xiao; Wang, Li; Wang, Shucai

    2016-01-01

    Dramatic increase in the use of nanoparticles (NPs) in a variety of applications greatly increased the likelihood of the release of NPs into the environment. Zinc oxide nanoparticles (ZnO NPs) are among the most commonly used NPs, and it has been shown that ZnO NPs were harmful to several different plants. We report here the effects of ZnO NPs exposure on biomass accumulation and photosynthesis in Arabidopsis. We found that 200 and 300 mg/L ZnO NPs treatments reduced Arabidopsis growth by ∼20 and 80%, respectively, in comparison to the control. Pigments measurement showed that Chlorophyll a and b contents were reduced more than 50%, whereas carotenoid contents remain largely unaffected in 300 mg/L ZnO NPs treated Arabidopsis plants. Consistent with this, net rate of photosynthesis, leaf stomatal conductance, intercellular CO2 concentration and transpiration rate were all reduced more than 50% in 300 mg/L ZnO NPs treated plants. Quantitative RT-PCR results showed that expression levels of chlorophyll synthesis genes including CHLOROPHYLL A OXYGENASE (CAO), CHLOROPHYLL SYNTHASE (CHLG), COPPER RESPONSE DEFECT 1 (CRD1), MAGNESIUM-PROTOPORPHYRIN IX METHYLTRANSFERASE (CHLM) and MG-CHELATASE SUBUNIT D (CHLD), and photosystem structure gene PHOTOSYSTEM I SUBUNIT D-2 (PSAD2), PHOTOSYSTEM I SUBUNIT E-2 (PSAE2), PHOTOSYSTEM I SUBUNIT K (PSAK) and PHOTOSYSTEM I SUBUNIT K (PSAN) were reduced about five folds in 300 mg/L ZnO NPs treated plants. On the other hand, elevated expression, though to different degrees, of several carotenoids synthesis genes including GERANYLGERANYL PYROPHOSPHATE SYNTHASE 6 (GGPS6), PHYTOENE SYNTHASE (PSY) PHYTOENE DESATURASE (PDS), and ZETA-CAROTENE DESATURASE (ZDS) were observed in ZnO NPs treated plants. Taken together, these results suggest that toxicity effects of ZnO NPs observed in Arabidopsis was likely due to the inhibition of the expression of chlorophyll synthesis genes and photosystem structure genes, which results in the inhibition of

  6. Photocatalytic degradation of organochlorine compounds over titanium oxide and titanium oxide containing zinc oxide decatungstate and hydrogen peroxide

    SciTech Connect

    Sattari, D.

    1995-12-01

    Ten organochlorine solvents, commonly used in industry, which are di- tri- and tetra- chloro derivatives of methane, ethane and ethylene were photocatalytically degraded over titanium oxide and titanium oxide containing zinc oxide: decatungstate and hydrogen peroxide. The study has been carried out by determining the yield of organochlorine degradation at different irradiation time. It was found that for derivatives of the three compounds the degradation rates were in the order of di>tri>tetra and for those containing the same number of chlorine substituents the order was ethylene>ethane. During the degradation of each organochlorine solvent chloride was liberated. Stoichiometry for photocatalytic degradation of organochlorine solvents are C{sub x}H{sub y-z}Cl{sub z} + xO{sub 2}{yields}xCO{sub 2} + (y-z)H{sup +} + zCl{sup -}.

  7. Synthesis and catalytic properties of mesoporous, bifunctional, gallium-niobium mixed oxides.

    PubMed

    Deshmane, Chinmay A; Jasinski, Jacek B; Ratnasamy, Paul; Carreon, Moises A

    2010-09-14

    Thermally stable mesoporous Ga-Nb mixed oxides, active in both acid-catalysed and redox reactions have been synthesized via self-assembly hydrothermal assisted approach. Methyl oleate, a major component of biodiesels, undergoes double bond and skeletal isomerisation as well as dehydrogenation over these novel mesophases.

  8. Microwave and millimeter wave dielectric permittivity and magnetic permeability of epsilon-gallium-iron-oxide nano-powders

    SciTech Connect

    Chao, Liu Afsar, Mohammed N.; Ohkoshi, Shin-ichi

    2015-05-07

    In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized, which have ferromagnetic resonant frequencies appearing over the frequency range of 30 GHz to 150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the sol-gel method. The particle sizes are observed to be smaller than 100 nm. In this paper, in-waveguide transmission and reflection method and the free space magneto-optical approach have been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. These techniques enable to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the microwave and millimeter wave frequency range from single set of direct measurements. The complex dielectric permittivity and magnetic permeability spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

  9. Synthesis and characterization of zinc oxide-neem oil-chitosan bionanocomposite for food packaging application.

    PubMed

    Sanuja, S; Agalya, A; Umapathy, M J

    2015-03-01

    Nano zinc oxide at different concentrations (0.1, 0.3 and 0.5%) and neem essential oil were incorporated into the chitosan polymer by solution cast method to enhance the properties of the bionanocomposite film. The functional groups, crystalline particle size, thermal stability and morphology were determined using FTIR, XRD, TGA and SEM, respectively. The results showed that 0.5% nano zinc oxide incorporated composite film have improved tensile strength, elongation, film thickness, film transparency and decreased water solubility, swelling and barrier properties due to the presence of neem oil and nano zinc oxide in the polymer matrix. Further antibacterial activity by well diffusion assay method was followed against Escherichia coli which were found to have good inhibition effect. In addition to this food quality application were carried against carrot and compared with the commercial film.

  10. Epitaxial aluminum-doped zinc oxide thin films on sapphire. 1: Effect of substrate orientation

    SciTech Connect

    Srikant, V.; Sergo, V.; Clarke, D.R.

    1995-07-01

    Epitaxial thin films of Al-doped zinc oxide have been grown on sapphire substrates by pulsed laser ablation. The effect of substrate temperature, background pressure of oxygen, and substrate orientation (A, M, R, C) on the orientation relationships between ZnO and sapphire have been evaluated using on- and off-axis X-ray diffractometry. Under all growth conditions zinc oxide, on A- and C-plane sapphire, grew with the c-axis perpendicular to the substrate. In contrast, on M and R orientations of sapphire, ZnO grew with its c-axis parallel or perpendicular to the substrate depending on the substrate temperature and background pressure employed during growth. In all cases only one unique in-plane relationship between the sapphire substrate and the zinc oxide film was found with the exception of the M-plane at high substrate temperatures.

  11. Biocidal effects of silver and zinc oxide nanoparticles on the bioluminescent bacteria

    NASA Astrophysics Data System (ADS)

    Taran, M. V.; Starodub, N. F.; Katsev, A. M.; Guidotti, M.; Khranovskyy, V. D.; Babanin, A. A.; Melnychuk, M. D.

    2013-11-01

    The effect of silver and zinc oxide nanoparticles in combination with alginate on bioluminescent Photobacterium leiognathi Sh1 bacteria was investigated. Silver nanoparticles were found to be more toxic than zinc oxide nanoparticles on bioluminescent bacteria. The nanoparticles and their ions released results in the same effect, however, it was absent in combination with alginate. The effective inhibiting concentration (EC50) for silver nanoparticles was found about 0.3 - 0.4 μg mL-1, which was up to two times larger then for zinc oxide nanoparticles. The absence of sodium chloride in the tested media prevented the formation of colloidal particles of larger size and the effective inhibition concentrations of metal derivatives were lower than in the presence of sodium chloride.

  12. Synthesis and characterization of zinc oxide-neem oil-chitosan bionanocomposite for food packaging application.

    PubMed

    Sanuja, S; Agalya, A; Umapathy, M J

    2015-03-01

    Nano zinc oxide at different concentrations (0.1, 0.3 and 0.5%) and neem essential oil were incorporated into the chitosan polymer by solution cast method to enhance the properties of the bionanocomposite film. The functional groups, crystalline particle size, thermal stability and morphology were determined using FTIR, XRD, TGA and SEM, respectively. The results showed that 0.5% nano zinc oxide incorporated composite film have improved tensile strength, elongation, film thickness, film transparency and decreased water solubility, swelling and barrier properties due to the presence of neem oil and nano zinc oxide in the polymer matrix. Further antibacterial activity by well diffusion assay method was followed against Escherichia coli which were found to have good inhibition effect. In addition to this food quality application were carried against carrot and compared with the commercial film. PMID:25499891

  13. BIOCHEMISTRY OF MOBILE ZINC AND NITRIC OXIDE REVEALED BY FLUORESCENT SENSORS

    PubMed Central

    Pluth, Michael D.; Tomat, Elisa; Lippard, Stephen J.

    2010-01-01

    Biologically mobile zinc and nitric oxide (NO) are two prominent examples of inorganic compounds involved in numerous signaling pathways in living systems. In the past decade, a synergy of regulation, signaling, and translocation of these two species has emerged in several areas of human physiology, providing additional incentive for developing adequate detection systems for Zn(II) ions and NO in biological specimens. Fluorescent probes for both of these bioinorganic analytes provide excellent tools for their detection, with high spatial and temporal resolution. We review the most widely used fluorescent sensors for biological zinc and nitric oxide, together with promising new developments and unmet needs of contemporary Zn(II) and NO biological imaging. The interplay between zinc and nitric oxide in the nervous, cardiovascular, and immune systems is highlighted to illustrate the contributions of selective fluorescent probes to the study of these two important bioinorganic analytes. PMID:21675918

  14. Diffusion Coefficients of n-Alkanes and Polyethylenes Filled with Zinc Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Ozisik, Rahmi; Mattice, Wayne L.; von Meerwall, Ernst

    2003-03-01

    The diffusion coefficients of various n-alkane and polyethylene samples filled with zinc oxide nanoparticles were measured with pulsed-gradient spin-echo (PGSE) NMR technique. The n-alkanes used in this study had carbon numbers ranging between 12 and 60. The number average molecular weights of the two polyethylene samples were 6200 and 13900 g/mol. The different size of zinc oxide used with spherical geometry. The experiments were performed with three different zinc oxide nanoparticles that had differing sizes. This study investigates the effects of the nanoparticle size and the molecular weight on the diffusion coefficient of the polymer chains. The results account for the restriction to diffusion due to detour and tortuosity effects, which differ for n-alkanes and polyethylene. Because the effective diffusion distance in the PGSE NMR experiments is larger than the size of the nanoparticles, the observed diffusivities represent asymptotic averages over multiple encounters between the diffusing molecules and the nanoparticles.

  15. The role of intracellular zinc in chromium(VI)-induced oxidative stress, DNA damage and apoptosis.

    PubMed

    Rudolf, Emil; Cervinka, Miroslav

    2006-09-25

    Several studies have demonstrated that zinc is required for the optimal functioning of the skin. Changes in intracellular zinc concentrations have been associated with both improved protection of skin cells against various noxious factors as well as with increased susceptibility to external stress. Still, little is known about the role of intracellular zinc in hexavalent chromium (Cr(VI))-induced skin injury. To address this question, the effects of zinc deficiency or supplementation on Cr(VI)-induced cytotoxicity, oxidative stress, DNA injury and cell death were investigated in human diploid dermal fibroblasts during 48 h. Zinc levels in fibroblasts were manipulated by pretreatment of cells with 100 microM ZnSO4 and 4 or 25 microM zinc chelator TPEN. Cr(VI) (50, 10 and 1 microM) was found to produce time- and dose-dependent cytotoxicity resulting in oxidative stress, suppression of antioxidant systems and activation of p53-dependent apoptosis which is reported for the first time in this model in relation to environmental Cr(VI). Increased intracellular zinc partially attenuated Cr(VI)-induced cytotoxicity, oxidative stress and apoptosis by enhancing cellular antioxidant systems while inhibiting Cr(VI)-dependent apoptosis by preventing the activation of caspase-3. Decreased intracellular zinc enhanced cytotoxic effects of all the tested Cr(VI) concentrations, leading to rapid loss of cell membrane integrity and nuclear dispersion--hallmarks of necrosis. These new findings suggest that Cr(VI) as a model environmental toxin may damage in deeper regions residing skin fibroblasts whose susceptibility to such toxin depends among others on their intracellular Zn levels. Further investigation of the impact of Zn status on skin cells as well as any other cell populations exposed to Cr(VI) or other heavy metals is warranted.

  16. Spectroscopic characterization of zinc oxide nanorods synthesized by solid-state reaction

    NASA Astrophysics Data System (ADS)

    Prasad, Virendra; D'Souza, Charlene; Yadav, Deepti; Shaikh, A. J.; Vigneshwaran, Nadanathangam

    2006-09-01

    Well-crystallized zinc oxide nanorods have been fabricated by single step solid-state reaction using zinc acetate and sodium hydroxide, at room temperature. The sodium lauryl sulfate (SLS) stabilized zinc oxide nanorods were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectroscopy. The X-ray diffraction revealed the wurtzite structure of zinc oxide. The size estimation by XRD and TEM confirmed that the ZnO nanorods are made of single crystals. The growth of zinc oxide crystals into rod shape was found to be closely related to its hexagonal nature. The mass ratio of SLS:ZnO in the nanorods was found to be 1:10 based on the thermogravimetric analysis. Blue shift of photoluminescence emission was noticed in the ZnO nanorods when compared to that of ZnO bulk. FT-IR analysis confirmed the binding of SLS with ZnO nanorods. Apart from ease of preparation, this method has the advantage of eco-friendliness since the solvent and other harmful chemicals were eliminated in the synthesis protocol.

  17. Teucrium polium L. extract adsorbed on zinc oxide nanoparticles as a fortified sunscreen

    PubMed Central

    Ansari, Mehdi; Sharififar, Fariba; Kazemipour, Maryam; Sarhadinejad, Zarrin; Mahdavi, Hamid

    2013-01-01

    Introduction: Zinc oxide nanoparticles (ZnOn) have been used as carriers and sun-protecting agents for Teucrium polium L. extract to enhance sun protection. ZnOn was synthesized by hydrolyzing zinc acetate using sodium hydroxide with mean particle diameter less than 500 nm. Materials and Methods: Top flowerings of T. polium L. were extracted by percolation method with petroleum ether, chloroform, and 80% methanol consecutively. Methanolic extract was lyophilized and used as a flavonoid-rich fraction. Sunscreen was prepared by the reconstitution of 0.5 g of the lyophilized extract in water and mixing with 0.5 to 2 g zinc-oxide (ZnO). Sun protection factor (SPF) of the aqueous extract of T. polium, the prepared gel, as well as the zinc oxide suspension alone and in combination with each other was determined spectrophotometrically based on a modified Transpore® tape method. Results and Conclusion: Obtained results showed that the T. polium extract has a wide band of ultraviolet radiation (UV) spectrum absorption ranging from 250 nm to 380 nm. SPF of the combination product in the ultraviolet B (UVB) area was greater than 80, revealing a synergistic action between ZnO and T. polium. The adsorption of flavonoids of T. polium on Zinc-oxide nanoparticles (ZnOn) slowed down their release thereby lengthening their persistence on the skin and contributing to further duration of action. PMID:24350038

  18. Examination of the Oxidation Protection of Zinc Coatings Formed on Copper Alloys and Steel Substrates

    NASA Astrophysics Data System (ADS)

    Papazoglou, M.; Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.

    2010-01-01

    The exposure of metallic components at aggressive high temperature environments, usually limit their usage at similar application because they suffer from severe oxidation attack. Copper alloys are used in a wide range of high-quality indoor and outdoor applications, statue parts, art hardware, high strength and high thermal conductivity applications. On the other hand, steel is commonly used as mechanical part of industrial set outs or in the construction sector due to its high mechanical properties. The aim of the present work is the examination of the oxidation resistance of pack cementation zinc coatings deposited on copper, leaded brass and steel substrates at elevated temperature conditions. Furthermore, an effort made to make a long-term evaluation of the coated samples durability. The oxidation results showed that bare substrates appear to have undergone severe damage comparing with the coated ones. Furthermore, the mass gain of the uncoated samples was higher than this of the zinc covered ones. Particularly zinc coated brass was found to be more resistant to oxidation conditions in which it was exposed as it has the lower mass gain as compared to the bare substrates and zinc coated copper. Zinc coated steel was also proved to be more resistive than the uncoated steel.

  19. EXAMINATION OF THE OXIDATION PROTECTION OF ZINC COATINGS FORMED ON COPPER ALLOYS AND STEEL SUBSTRATES

    SciTech Connect

    Papazoglou, M.; Chaliampalias, D.; Vourlias, G.; Pavlidou, E.; Stergioudis, G.; Skolianos, S.

    2010-01-21

    The exposure of metallic components at aggressive high temperature environments, usually limit their usage at similar application because they suffer from severe oxidation attack. Copper alloys are used in a wide range of high-quality indoor and outdoor applications, statue parts, art hardware, high strength and high thermal conductivity applications. On the other hand, steel is commonly used as mechanical part of industrial set outs or in the construction sector due to its high mechanical properties. The aim of the present work is the examination of the oxidation resistance of pack cementation zinc coatings deposited on copper, leaded brass and steel substrates at elevated temperature conditions. Furthermore, an effort made to make a long-term evaluation of the coated samples durability. The oxidation results showed that bare substrates appear to have undergone severe damage comparing with the coated ones. Furthermore, the mass gain of the uncoated samples was higher than this of the zinc covered ones. Particularly zinc coated brass was found to be more resistant to oxidation conditions in which it was exposed as it has the lower mass gain as compared to the bare substrates and zinc coated copper. Zinc coated steel was also proved to be more resistive than the uncoated steel.

  20. Development of zinc oxide nanoparticle by sonochemical method and study of their physical and optical properties

    NASA Astrophysics Data System (ADS)

    Khan, Samreen Heena; Suriyaprabha, R.; Pathak, Bhawana; Fulekar, M. H.

    2016-04-01

    With the miniaturization of crystal size, the fraction of under-coordinated surface atoms becomes dominant, and hence, materials in the nano-regime behave very differently from the similar material in a bulk. Zinc oxide (ZnO), particularly, exhibits extraordinary properties such as a wide direct band gap (3.37 eV), large excitation binding energy (60 meV), low refractive index (1.9), stability to intense ultraviolet (UV) illumination, resistance to high-energy irradiation, and lower toxicity as compared to other semiconductors. This very property makes Zinc Oxide a potential candidate in many application fields, particularly as a prominent semiconductor. Zinc Oxide plays a significant role in many technological advances with its application in semiconductor mediated photocatalytic processes and sensor, solar cells and others. In present study, Zinc Oxide (ZnO) has been synthesized using three different precursors by sonochemical method. Zinc Acetate Dihydrate, Zinc Nitrate Hexahydrate and Zinc Sulphate Heptahydrate used as a precursor for the synthesis process. The synthesized ZnO nanoparticle has been found under the range of ˜50 nm. Zinc oxide nanoparticles were characterized using different characterizing tools. The as-synthesized ZnO was characterized by Fourier Transform-Infrared Spectroscopy (FT-IR) for the determination of functional group; Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS) for Morphology and elemental detection respectively, Transmission Electron Microscopy for Particle size distribution and morphology and X-Ray Diffraction (XRD) for the confirmation of crystal structure of the nanomaterial. The optical properties of the ZnO were examined by UV-VIS spectroscopy equipped with Diffuse Reflectance spectroscopy (DRS) confirmed the optical band gap of ZnO-3 around 3.23 eV resembles with the band gap of bulk ZnO (3.37eV). The TEM micrograph of the as-synthesized material showed perfectly spherical shaped

  1. Synthesis, characterization, and optical properties of zinc oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Andelman, Tamar

    Chapter 1. A general introduction is presented that describes the new interdisciplinary field of nanoscience. The various unique properties of nanocrystals are highlighted, and different nanocrystal synthetic techniques are discussed. The importance of a technique that achieves control over nanocrystal size and morphology is stressed. Morphological control over zinc oxide nanocrystals using the "thermal decomposition of metal acetates" method is discussed. The numerous possible morphologies of nanocrystals of zinc oxide are described to illustrate the suitability of ZnO for a study of the relationship between nanocrystal morphology and properties. Chapter 2. A study of the growth, structure, self organization properties, and photoluminescence, of ZnO nanorods with 2 nm diameter is presented. The disparity in relative intensity of X-ray diffraction peaks between the ZnO nanorods and bulk ZnO is modeled using XRD refinement software, and shown to arise from preferred orientation, which occurs due to the nanorod shape. The effect of various synthesis parameters---reaction time, and capping agent to precursor molar ratio---on the nanorod growth and structure is probed using synchrotron X-ray diffraction by monitoring the width and position of the (002) diffraction peak. The stacking properties of the nanorods are studied using small angle X-ray diffraction, which can probe larger scale ordering due to the small angles used. The photoluminescence properties are studied using solution photoluminescence measurements, and strong quantum confinement effects are observed, due to the small diameter of the nanorods. Chapter 3. Morphological control of ZnO nanocrystals based on the coordinating power of the solvent used is presented. The various nano-shapes (nanotriangles, spherical nanoparticles, and nanorods) are studied by TEM and XRD. Using tilting TEM experiments and CrystalMaker models, the three dimensional nature of the nanotriangles is determined. Solution

  2. Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

    NASA Technical Reports Server (NTRS)

    Gourrier, S.; Mircea, A.; Simondet, F.

    1980-01-01

    The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

  3. Using C₆₀⁺ Sputtering to Improve Detection Limit of Nitrogen in Zinc Oxide

    SciTech Connect

    Zhu, Zihua; Shutthanandan, V.; Nachimuthu, Ponnusamy

    2010-05-11

    C₆₀⁺ sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time-of-flight secondary ion mass spectrometry (ToF-SIMS). Compared to traditional Cs+ sputtering depth profiling, the C₆₀⁺ sputtering provides over 200 times of effective signal intensity and the detection limit is about 10 times better. In addition, our X-ray photoelectron spectroscopy (XPS) results show that sputtering zinc oxide materials by 10 keV C₆₀⁺ leads to very weak carbon deposition at bottom of the sputter crater.

  4. Synthesis, characterization and antimicrobial applications of zinc oxide nanoparticles loaded gum acacia/poly(SA) hydrogels.

    PubMed

    Bajpai, S K; Jadaun, Mamta; Tiwari, Seema

    2016-11-20

    In this work, zinc oxide nanoparticles were synthesized in-situ within the gum acacia/poly (acrylate) hydrogel network using hydrothermal approach. The synthesized zinc oxide nanoparticles were characterized by Surface plasmon resonance (SPR), X-Ray diffraction (XRD) analysis, Fourier transform infrared (FTIR) spectroscopy and Scanning electron microscopy (SEM). The water absorption behavior of ZnO/GA/poly(SA) hydrogels was investigated in the phosphate buffer saline (PBS) of pH 7.4 at 37°C. The water uptake data were analyzed with the help of various kinetic models. Finally, the antimicrobial action of nanocomposites was studied using E. coli as model bacteria.

  5. Eco-friendly approach towards green synthesis of zinc oxide nanocrystals and its potential applications.

    PubMed

    Velmurugan, Palanivel; Park, Jung-Hee; Lee, Sang-Myeong; Yi, Young-Joo; Cho, Min; Jang, Jum-Suk; Myung, Hyun; Bang, Keuk-Soo; Oh, Byung-Taek

    2016-09-01

    In the present study, we investigated a novel green route for synthesis of zinc oxide (ZnO) nanocrystals using Prunus × yedoensis Matsumura leaf extract as a reducing agent without using any surfactant or external energy. Standard characterization studies were carried out to confirm the obtained product using UV-Vis spectra, SEM-EDS, FTIR, TEM, and XRD. In addition, the synthesized ZnO nanocrystals were coated onto fabric and leather samples to study their bacteriostatic effect against odor-causing bacteria Brevibacterium linens and Staphylococcus epidermidis. Zinc oxide nanocrystal-coated fabric and leather showed good activity against both bacteria.

  6. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  7. Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode

    SciTech Connect

    Klochko, N. P. Khrypunov, G. S.; Myagchenko, Yu. O.; Melnychuk, E. E.; Kopach, V. R.; Klepikova, E. S.; Lyubov, V. M.; Kopach, A. V.

    2012-06-15

    Zinc oxide nanostructures are objects of study in the field of optoelectronics, solar power engineering, nanosensorics, and catalysis. For the purpose of the controlled growth of one-dimensional submicrometer zinc oxide structures in the pulsed electrodeposition mode, the effect of the pulse electrolysis parameters on the morphology of ZnO layers, their optical properties, and structural and substructural characteristics is determined using X-ray diffraction, optical spectrophotometry, and atomic-force microscopy. The possibility of fabricating arrays of ZnO nanowires with different geometrical shapes, perpendicular to the substrate surface, by varying the frequency of cathode-substrate potential pulses is shown.

  8. Synthesis, characterization and antimicrobial applications of zinc oxide nanoparticles loaded gum acacia/poly(SA) hydrogels.

    PubMed

    Bajpai, S K; Jadaun, Mamta; Tiwari, Seema

    2016-11-20

    In this work, zinc oxide nanoparticles were synthesized in-situ within the gum acacia/poly (acrylate) hydrogel network using hydrothermal approach. The synthesized zinc oxide nanoparticles were characterized by Surface plasmon resonance (SPR), X-Ray diffraction (XRD) analysis, Fourier transform infrared (FTIR) spectroscopy and Scanning electron microscopy (SEM). The water absorption behavior of ZnO/GA/poly(SA) hydrogels was investigated in the phosphate buffer saline (PBS) of pH 7.4 at 37°C. The water uptake data were analyzed with the help of various kinetic models. Finally, the antimicrobial action of nanocomposites was studied using E. coli as model bacteria. PMID:27561472

  9. In vivo target bio-imaging of Alzheimer's disease by fluorescent zinc oxide nanoclusters.

    PubMed

    Lai, Lanmei; Zhao, Chunqiu; Su, Meina; Li, Xiaoqi; Liu, Xiaoli; Jiang, Hui; Amatore, Christian; Wang, Xuemei

    2016-07-21

    Alzheimer's disease (AD) is an irreversible neurodegenerative disease which is difficult to cure. When Alzheimer's disease occurs, the level of zinc ions in the brain changes, and the relevant amount of zinc ions continue decreasing in the cerebrospinal fluid and plasma of Alzheimer's patients with disease exacerbation. In view of these considerations, we have explored a new strategy for the in vivo rapid fluorescence imaging of Alzheimer's disease through target bio-labeling of zinc oxide nanoclusters which were biosynthesized in vivo in the Alzheimer's brain via intravenous injection of zinc gluconate solution. By using three-month-old and six-month-old Alzheimer's model mice as models, our observations demonstrate that biocompatible zinc ions could pass through the blood-brain barrier of the Alzheimer's disease mice and generate fluorescent zinc oxide nanoclusters (ZnO NCs) through biosynthesis, and then the bio-synthesized ZnO NCs could readily accumulate in situ on the hippocampus specific region for the in vivo fluorescent labeling of the affected sites. This study provides a new way for the rapid diagnosis of Alzheimer's disease and may have promising prospects in the effective diagnosis of Alzheimer's disease.

  10. Nitric oxide ameliorates zinc oxide nanoparticles-induced phytotoxicity in rice seedlings.

    PubMed

    Chen, Juan; Liu, Xiang; Wang, Chao; Yin, Shan-Shan; Li, Xiu-Ling; Hu, Wen-Jun; Simon, Martin; Shen, Zhi-Jun; Xiao, Qiang; Chu, Cheng-Cai; Peng, Xin-Xiang; Zheng, Hai-Lei

    2015-10-30

    Nitric oxide (NO) has been found to function in enhancing plant tolerance to various environmental stresses. However, role of NO in relieving zinc oxide nanoparticles (ZnO NPs)-induced phytotoxicity remains unknown. Here, sodium nitroprusside (SNP, a NO donor) was used to investigate the possible roles and the regulatory mechanisms of NO in counteracting ZnO NPs toxicity in rice seedlings. Our results showed that 10 μM SNP significantly inhibited the appearance of ZnO NP toxicity symptoms. SNP addition significantly reduced Zn accumulation, reactive oxygen species production and lipid peroxidation caused by ZnO NPs. The protective role of SNP in reducing ZnO NPs-induced oxidative damage is closely related to NO-mediated antioxidant system. A decrease in superoxide dismutase activity, as well as an increase in reduced glutathione content and peroxidase, catalase and ascorbate peroxidase activity was observed under SNP and ZnO NPs combined treatments, compared to ZnO NPs treatment alone. The relative transcript abundance of corresponding antioxidant genes exhibited a similar change. The role of NO in enhancing ZnO NPs tolerance was further confirmed by genetic analysis using a NO excess mutant (noe1) and an OsNOA1-silenced plant (noa1) of rice. Together, this study provides the first evidence indicating that NO functions in ameliorating ZnO NPs-induced phytotoxicity.

  11. Migration of point defects and a defect pair in zinc oxide using the dimer method

    SciTech Connect

    Chen, Dong; Gao, Fei; Dong, Mingdong; Liu, Bo

    2012-09-24

    The migration mechanism and the minimum energy path of vacancies, interstitials and an interstitial-vacancy pair in zinc oxide have been studied by the dimer method. The in-plane and out-of-plane migrations of zinc and oxygen vacancies are found to be anisotropic. The kick-out mechanism is energetically preferred to zinc and oxygen interstitials that can easily migrate through the ZnO crystal lattice. In addition, the migration process of an interstitial-vacancy pair as a complex of an octahedral oxygen interstitial and a zinc vacancy is dominated by an oxygen interstitial/zinc vacancy successive migration. The energy barriers indicate that the existence of oxygen interstitial in the defect pair can promote the mobility of zinc vacancy, whereas the migration of oxygen interstitial is slowed down due to the presence of zinc vacancy. In the end, we show a possible migration path of the interstitial-vacancy pair that can be dissociated through a set of displacement movements.

  12. Zinc regulates iNOS-derived nitric oxide formation in endothelial cells.

    PubMed

    Cortese-Krott, Miriam M; Kulakov, Larissa; Opländer, Christian; Kolb-Bachofen, Victoria; Kröncke, Klaus-D; Suschek, Christoph V

    2014-01-01

    Aberrant production of nitric oxide (NO) by inducible NO synthase (iNOS) has been implicated in the pathogenesis of endothelial dysfunction and vascular disease. Mechanisms responsible for the fine-tuning of iNOS activity in inflammation are still not fully understood. Zinc is an important structural element of NOS enzymes and is known to inhibit its catalytical activity. In this study we aimed to investigate the effects of zinc on iNOS activity and expression in endothelial cells. We found that zinc down-regulated the expression of iNOS (mRNA+protein) and decreased cytokine-mediated activation of the iNOS promoter. Zinc-mediated regulation of iNOS expression was due to inhibition of NF-κB transactivation activity, as determined by a decrease in both NF-κB-driven luciferase reporter activity and expression of NF-κB target genes, including cyclooxygenase 2 and IL-1β. However, zinc did not affect NF-κB translocation into the nucleus, as assessed by Western blot analysis of nuclear and cytoplasmic fractions. Taken together our results demonstrate that zinc limits iNOS-derived high output NO production in endothelial cells by inhibiting NF-κB-dependent iNOS expression, pointing to a role of zinc as a regulator of iNOS activity in inflammation.

  13. Photoemission study of the adsorption of nitric oxide on gallium arsenide (110) at low temperature

    SciTech Connect

    Bermudez, V.M. ); Williams, R.T. Physics Department, Wake Forest University, Winston-Salem, NC ); Williams, G.P. Jr.; Rowe, M.W.; Liu, H.; Wu, A. ); Sadeghi, H.R.; Rife, J.C. )

    1990-05-01

    Photoelectron spectroscopy with synchrotron radiation has been used to study changes in the region of the valence band and Ga and As 3{ital d} core levels of GaAs (110) resulting from exposure to nitric oxide (NO) at substrate temperatures of 40--140 K. Up to about 60 K, NO physisorbs. Thermal and photochemical effects have been observed during annealing of the adsorbed layer or irradiation by the monochromatized synchrotron radiation beam. At about 70 K, a distinct molecular species forms along with adsorbed O. This species, which desorbs and/or dissociates above about 90 K, is identified as nitrous oxide (N{sub 2}O ) on the basis of comparison with similar data for N{sub 2}O condensed on GaAs. Pre-adsorbed O inhibits N{sub 2}O formation, suggesting that the GaAs surface participates actively in the process. Above about 100 K, only O adsorption is observed, occurring by a mechanism different from that leading to O adsorption at lower temperature.

  14. Heat-sterilized silver oxide-zinc cells: Cycle life studies

    NASA Technical Reports Server (NTRS)

    Arms, J. T.

    1973-01-01

    A JPL study was conducted to evaluate the cell design parameters that contribute to the cycle life of sealed, heat-sterilized silver oxide-zinc cells. Test cells having a rated capacity of 4.2 A-h were fabricated using zinc oxide electrodes prepared by the sintered Teflon process. Two separator variations were evaluated, one having acrylic acid and the other methacrylic acid grafted to irradiated polyethylene film. Significant results of this study include the following: (1) cycle life in excess of 300 cycles was attained; (2) a zinc oxide/silver stoichiometric ratio of 1.5 resulted in greater cycle life than a ratio of 1.1, and similar cycle life to cells having a ratio of 2; (3) cells having methacrylic acid grafted separators suffered somewhat less in capacity loss due to zinc electrode shape change than cells having acrylic acid type; (4) use of acrylic acid grafted separators was slightly superior to the methacrylic acid type in respect to silver penetration; and (5) the inclusion of a layer of potassium titanate paper adjacent to the zinc electrodes resulted in cells that achieved higher cycle life before any of the group failed than that reached by cells of any other construction.

  15. Zinc supplementation attenuates metallothionein and oxidative stress changes in kidney of streptozotocin-induced diabetic rats.

    PubMed

    Özcelik, Dervis; Nazıroglu, Mustafa; Tunçdemir, Matem; Çelik, Ömer; Öztürk, Melek; Flores-Arce, M F

    2012-12-01

    Zinc is an element that under physiological conditions preferentially binds to and is a potent inducer of metallothionein under physiological conditions. The present study was conducted to explore whether zinc supplementation morphologically and biochemically protects against diabetic nephropathy through modulation of kidney metallothionein induction and oxidative stress in streptozotocin-induced diabetic rats. Thirty-two Wistar albino male rats were equally divided into four groups. The first group was used as untreated controls and the second group was supplemented with 30 mg/kg/day zinc as zinc sulfate. The third group was treated with streptozotocin to induce diabetes and the fourth group was treated with streptozotocin and supplemented with zinc as described for group 2. The blood glucose and micro-albuminuria levels, body and kidney weights were measured during the 42-day experimental period. At the end of the experiment, the kidneys were removed from all animals from the four groups. Diabetes resulted in degenerative kidney morphological changes. The metallothionein immunoreactivity level was lower and the kidney lipid peroxidation levels were higher in the diabetes group than in the controls. The metallothionein immunoreactivity levels were higher in the tubules of the zinc-supplemented diabetic rats as compared to the non-supplemented diabetic group. The zinc and metallothionein concentrations in kidney tissue were higher in the supplemented diabetic group compared to the non-supplemented diabetes group. The activity of glutathione peroxidase did not change in any of the four groups. In conclusion, the present study shows that zinc has a protective effect against diabetic damage of kidney tissue through stimulation of metallothionein synthesis and regulation of the oxidative stress.

  16. Zinc stable isotope fractionation upon accelerated oxidative weathering of sulfidic mine waste.

    PubMed

    Matthies, R; Krahé, L; Blowes, D W

    2014-07-15

    Accelerated oxidative weathering in a reaction cell (ASTM D 5744 standard protocol) was performed over a 33 week period on well characterized, sulfidic mine waste from the Kidd Creek Cu-Zn volcanogenic massive sulfide deposit, Canada. The cell leachate was monitored for physicochemical parameters, ion concentrations and stable isotope ratios of zinc. Filtered zinc concentrations (<0.45 μm) in the leachate ranged between 4.5 mg L(-1) and 1.9 g L(-1)-potentially controlled by pH, mineral solubility kinetics and (de)sorption processes. The zinc stable isotope ratios varied mass-dependently within +0.1 and +0.52‰ relative to IRMM 3702, and were strongly dependent on the pH (rpH-d66Zn=0.65, p<0.005, n=31). At a pH below 5, zinc mobilization was governed by sphalerite oxidation and hydroxide dissolution-pointing to the isotope signature of sphalerite (+0.1 to +0.16‰). Desorption processes resulted in enrichment of (66)Zn in the leachate reaching a maximum offset of +0.32‰ compared to the proposed sphalerite isotope signature. Over a period characterized by pH=6.1 ± 0.6, isotope ratios were significantly more enriched in (66)Zn with an offset of ≈ 0.23‰ compared to sphalerite, suggesting that zinc release may have been derived from a second zinc source, such as carbonate minerals, which compose 8 wt.% of the tailings. This preliminary study confirms the benefit of applying zinc isotopes alongside standard monitoring parameters to track principal zinc sources and weathering processes in complex multi-phase matrices.

  17. Nanocrystalline zinc oxide: Pyrolytic synthesis and spectroscopic characteristics

    SciTech Connect

    Demyanets, L. N. Li, L. E.; Lavrikov, A. S.; Nikitin, S. V.

    2010-01-15

    Nanocrystalline and microcrystalline ZnO powders are synthesized by the pyrolysis of organic zinc salts in the presence of a reducing catalyst represented by a porous cellulose carrier. The specimens obtained are characterized by X-ray powder diffraction, energy dispersive analysis, scanning electron microscopy, and pulse cathodoluminescence. Lasing characteristics of the specimens are studied. The synthesis conditions, under which specimens with the crystallite morphology optimal for a low-threshold lasing are obtained, are found.

  18. Growth of zinc oxide by chemical vapor transport

    NASA Astrophysics Data System (ADS)

    Mikami, Makoto; Eto, Toshiaki; Wang, JiFeng; Masa, Yoshihiko; Isshiki, Minoru

    2005-04-01

    ZnO crystal growth by chemical vapor transport (CVT) is carried out using carbon as a transport agent. Under the optimum ΔT and growth temperature, a single crystal was grown. The carbon contamination is not detected by SIMS measurements and all the crystals are orange-red colored. It is claimed that the orange-red color is attributed to the shift of stoichiometry to zinc rich atmosphere.

  19. Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone

    SciTech Connect

    Warner, Ellis J.; Gladfelter, Wayne L.; Johnson, Forrest; Campbell, Stephen A.

    2015-03-15

    Silicon or glass substrates exposed to sequential pulses of tetraethyltin (TET) and ozone (O{sub 3}) were coated with thin films of SnO{sub 2}. Self-limiting deposition was found using 8 s pulse times, and a uniform thickness per cycle (TPC) of 0.2 nm/cycle was observed in a small, yet reproducible, temperature window from 290 to 320 °C. The as-deposited, stoichiometric SnO{sub 2} films were amorphous and transparent above 400 nm. Interspersing pulses of diethylzinc and O{sub 3} among the TET:O{sub 3} pulses resulted in deposition of zinc tin oxide films, where the fraction of tin, defined as [at. % Sn/(at. % Sn + at. % Zn)], was controlled by the ratio of TET pulses, specifically n{sub TET}:(n{sub TET} + n{sub DEZ}) where n{sub TET} and n{sub DEZ} are the number of precursor/O{sub 3} subcycles within each atomic layer deposition (ALD) supercycle. Based on film thickness and composition measurements, the TET pulse time required to reach saturation in the TPC of SnO{sub 2} on ZnO surfaces was increased to >30 s. Under these conditions, film stoichiometry as a function of the TET pulse ratio was consistent with the model devised by Elliott and Nilsen. The as-deposited zinc tin oxide (ZTO) films were amorphous and remained so even after annealing at 450 °C in air for 1 h. The optical bandgap of the transparent ZTO films increased as the tin concentration increased. Hall measurements established that the n-type ZTO carrier concentration was 3 × 10{sup 17} and 4 × 10{sup 18} cm{sup −3} for fractional tin concentrations of 0.28 and 0.63, respectively. The carrier mobility decreased as the concentration of tin increased. A broken gap pn junction was fabricated using ALD-deposited ZTO and a sputtered layer of cuprous oxide. The junction demonstrated ohmic behavior and low resistance consistent with similar junctions prepared using sputter-deposited ZTO.

  20. Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties

    NASA Astrophysics Data System (ADS)

    Liu, Lizhu; Chen, Yiqing; Guo, Linliang; Guo, Taibo; Zhu, Yunqing; Su, Yong; Jia, Chong; Wei, Meiqin; Cheng, Yinfen

    2011-11-01

    The novel two-dimensional (2-D) Ga-doped In2O3 nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu-Sn alloy as the substrates. Two basic parts construct this leaf-like nanostructure: a long central trunk and two tapered nanoribbons in symmetric distribution in relation to the trunk. The Ga-In-O alloy particles are located at or close to the tips of the central trunks and serve as catalysts for the central trunk growth by the self-catalytic vapor-liquid-solid (VLS) mechanism. And the homoepitaxial growth of tapered nanoribbon on the surface of the central trunk can be explained by vapor-solid (VS) mechanism. The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3 transparent conducting oxide (TCO) detected two blue peaks located at 432 nm and 481 nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs). The successful preparation of this novel 2-D Ga-doped In2O3 nanoleaves not only enriches the synthesis of TCO materials, but also provides new blocks in future architecture of functional nano-devices.

  1. Cobalt-phosphate-assisted photoelectrochemical water oxidation by arrays of molybdenum-doped zinc oxide nanorods.

    PubMed

    Lin, Yan-Gu; Hsu, Yu-Kuei; Chen, Ying-Chu; Lee, Bing-Wei; Hwang, Jih-Shang; Chen, Li-Chyong; Chen, Kuei-Hsien

    2014-09-01

    We report the first demonstration of cobalt phosphate (Co-Pi)-assisted molybdenum-doped zinc oxide nanorods (Zn(1-x)Mo(x)O NRs) as visible-light-sensitive photofunctional electrodes to fundamentally improve the performance of ZnO NRs for photoelectrochemical (PEC) water splitting. A maximum photoconversion efficiency as high as 1.05% was achieved, at a photocurrent density of 1.4 mA cm(-2). More importantly, in addition to achieve the maximum incident photon to current conversion efficiency (IPCE) value of 86%, it could be noted that the IPCE of Zn(1-x)Mo(x)O photoanodes under monochromatic illumination (450 nm) is up to 12%. Our PEC performances are comparable to those of many oxide-based photoanodes in recent reports. The improvement in photoactivity of PEC water splitting may be attributed to the enhanced visible-light absorption, increased charge-carrier densities, and improved interfacial charge-transfer kinetics due to the combined effect of molybdenum incorporation and Co-Pi modification, contributing to photocatalysis. The new design of constructing highly photoactive Co-Pi-assisted Zn(1-x)Mo(x)O photoanodes enriches knowledge on doping and advances the development of high-efficiency photoelectrodes in the solar-hydrogen field.

  2. The cytotoxic effects of titanium oxide and zinc oxide nanoparticles oh Human Cervical Adenocarcinoma cell membranes

    NASA Astrophysics Data System (ADS)

    Mironava, Tatsiana; Applebaum, Ariella; Applebaum, Eliana; Guterman, Shoshana; Applebaum, Kayla; Grossman, Daniel; Gordon, Chris; Brink, Peter; Wang, H. Z.; Rafailovich, Miriam

    2013-03-01

    The importance of titanium dioxide (TiO2) and zinc oxide (ZnO), inorganic metal oxides nanoparticles (NPs) stems from their ubiquitous applications in personal care products, solar cells and food whitening agents. Hence, these NPs come in direct contact with the skin, digestive tracts and are absorbed into human tissues. Currently, TiO2 and ZnO are considered safe commercial ingredients by the material safety data sheets with no reported evidence of carcinogenicity or ecotoxicity, and do not classify either NP as a toxic substance. This study examined the direct effects of TiO2 and ZnO on HeLa cells, a human cervical adenocarcinonma cell line, and their membrane mechanics. The whole cell patch-clamp technique was used in addition to immunohistochemistry staining, TEM and atomic force microscopy (AFM). Additionally, we examined the effects of dexamethasone (DXM), a glucocorticoid steroid known to have an effect on cell membrane mechanics. Overall, TiO2 and ZnO seemed to have an adverse effect on cell membrane mechanics by effecting cell proliferation, altering cellular structure, decreasing cell-cell adhesion, activating existing ion channels, increasing membrane permeability, and possibly disrupting cell signaling.

  3. Oxidative stress and genotoxic effect of zinc oxide nanoparticles in freshwater snail Lymnaea luteola L.

    PubMed

    Ali, Daoud; Alarifi, Saud; Kumar, Sudhir; Ahamed, Maqusood; Siddiqui, Maqsood A

    2012-11-15

    Understanding the toxic effects of nanoparticles on aquatic organism is the biggest obstacle to the safe development of nanotechnology. However, little is known about the toxic mechanisms of zinc oxide nanoparticles (ZnONPs) in freshwater snail Lymnaea luteola (L. luteola). This study was designed to investigate the possible mechanisms of genotoxicity induced by ZnONPs in freshwater snail L. luteola. ZnONPs (32 μg/ml) elicited a significant (p<0.01) reduction in glutathione (42.10% and 61.40%), glutathione-S-transferase (25.60% and 40.24%) and glutathione peroxidase (21.73% and 39.13%) with a concomitant increase in malondialdehyde level (54.50% and 57.14%; p<0.01) and catalase (34.88% and 52.56%; p<0.01) in digestive gland of L. luteola after 24 and 96 h exposure, respectively. However, a statistically significant (p<0.01) induction in DNA damage was observed by the comet assay in digestive gland cells treated with ZnONPs for 24 and 96 h. Thus, the results demonstrate that ZnONPs induce genotoxicity in digestive gland cells through oxidative stress. Freshwater snail L. luteola may be used as suitable test model for nanoecotoxicological studies in future.

  4. Formulation of nano-zinc oxide into biocomposite beads for dye decolorization

    NASA Astrophysics Data System (ADS)

    Elkady, M. F.; Hassan, H. Shokry; El-Shazly, A. H.

    2015-03-01

    Zinc oxide nano-powder was prepared using sol-gel technique to be encapsulated onto polymeric blend composed from alginate and polyvinyl alcohol to fabricate novel bio-composite beads of nano-zinc oxide. The XRD patterns of both zinc oxide nano-powder and its polymeric hybrid were crystalline in their nature. The FTIR analysis of the fabricated ZnO polymeric hybrid confirms the binding between zinc oxide and the polymeric matrix. The BET analysis demonstrated that the calculated specific surface area of the formulated ZnO beads that equal to 22.8 m2/g is comparatively less than that of the free ZnO nano-powdered that equivalent to 64.9 m2/g. The thermal stability of ZnO nano-powdered dramatically decreased with its immobilization into the polymeric alginate and PVA matrix. The formulated beads had very strong mechanical strength and they are difficult to be broken up to 1500rpm. Moreover, this hybrid beads are chemically stable at the acidic media. The formulated ZnO hybrid beads verified to be good adsorbent material for C.I basic blue 41 (CB41).

  5. Ternary and coupled binary zinc tin oxide nanopowders: Synthesis, characterization, and potential application in photocatalytic processes

    SciTech Connect

    Ivetić, T.B.; Finčur, N.L.; Đačanin, Lj. R.; Abramović, B.F.; Lukić-Petrović, S.R.

    2015-02-15

    Highlights: • Mechanochemically synthesized nanocrystalline zinc tin oxide (ZTO) powders. • Photocatalytic degradation of alprazolam in the presence of ZTO water suspensions. • Coupled binary ZTO exhibits enhanced photocatalytic activity compared to ternary ZTO. - Abstract: In this paper, ternary and coupled binary zinc tin oxide nanocrystalline powders were prepared via simple solid-state mechanochemical method. X-ray diffraction, scanning electron microscopy, Raman and reflectance spectroscopy were used to study the structure and optical properties of the obtained powder samples. The thermal behavior of zinc tin oxide system was examined through simultaneous thermogravimetric-differential scanning calorimetric analysis. The efficiencies of ternary (Zn{sub 2}SnO{sub 4} and ZnSnO{sub 3}) and coupled binary (ZnO/SnO{sub 2}) zinc tin oxide water suspensions in the photocatalytic degradation of alprazolam, short-acting anxiolytic of the benzodiazepine class of psychoactive drugs, under UV irradiation were determined and compared with the efficiency of pure ZnO and SnO{sub 2}.

  6. An innovative zinc oxide-coated zeolite adsorbent for removal of humic acid

    EPA Science Inventory

    Zinc oxide (ZnO)-coated zeolite adsorbents were developed by both nitric acid modification and Zn(NO3)2•6H2O functionalization of zeolite. The developed adsorbents were used for the removal of humic acid (HA) from aqueous solutions. The adsorption capacity of the adsorbents at 21...

  7. The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

    NASA Astrophysics Data System (ADS)

    Pronin, I. A.; Averin, I. A.; Bozhinov, A. S.; Georgieva, A. Ts.; Dimitrov, D. Ts.; Karmanov, A. A.; Moshnikov, V. A.; Papazova, K. I.; Terukov, E. I.; Yakushova, N. D.

    2015-10-01

    The thermovoltaic effect has been for the first time observed in zinc oxide. The samples had the form of ZnO/ZnO-Me sandwich structures (Me = Cu, Fe) formed by the sol-gel method. An electromotive force of 1-10 mV appeared in the temperature range of 200-300°C.

  8. Vapor-phase growth of transparent zinc oxide ceramics with c -axis orientation

    SciTech Connect

    Noritake, F.; Yamamoto, N.; Horiguchi, Y. ); Fujitsu, S.; Koumoto, K. ); Yanagida, H. )

    1991-01-01

    Large transparent specimens of polycrystalline zinc oxide with c-axis orientation have been prepared by the vapor transport method. Optical transmittance is 80% to 90% at 800 nm. X-ray diffraction peaks from faces other than (001) are negligible.

  9. Hybrid p-type copper sulphide coated zinc oxide nanowire heterojunction device

    NASA Astrophysics Data System (ADS)

    Bu, Ian Y. Y.

    2014-11-01

    A novel heterojunction was formed between zinc oxide nanowires and copper sulphide. The proposed device was fabricated by a fully solution-based process that consists of hydrothermal growth method and chemical bath deposition. The optoelectronic properties of the proposed heterojunction were evaluated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, UV-vis spectroscopy, photoluminescence measurements and current voltage characteristics.

  10. Effect of various zinc oxide materials as root-end fillings on healing after replantation.

    PubMed

    Pitt Ford, T R; Andreasen, J O; Dorn, S O; Kariyawasam, S P

    1995-11-01

    This study examined the effect of various zinc oxide materials as root-end fillings of teeth in a replantation model. A total of 35 molar teeth were used from 19 monkeys. After extraction, root ends were resected, the canals contaminated with oral bacteria, root-end cavities prepared and fillings placed prior to replantation. After 8 weeks the teeth and surrounding jaw were removed and prepared for histological examination. Twelve roots were filled with IRM plus dentine chips, and six with Cavit; the tissue response around root ends filled with these materials as assessed by inflammation was similar to that previous reported to IRM and Super EBA cement and was characterized by little or no inflammation of limited extent. In contrast, more severe inflammation was observed around root ends filled with plain zinc oxide-eugenol or Kalzinol; however, the reaction was neither as severe nor as extensive as that to amalgam root-end fillings. Giant cells were observed most often on the surface of fillings with Cavit and zinc oxide-eugenol. It is concluded that the tissue response to IRM with or without added dentine, Super EBA and Cavit was similar and mild; it was less severe than that to zinc oxide-eugenol and Kalzinol. All these materials had a much more favourable response than amalgam

  11. Biosynthesis of silver and zinc oxide nanoparticles using Pichia fermentans JA2 and their antimicrobial property

    NASA Astrophysics Data System (ADS)

    Chauhan, Ritika; Reddy, Arpita; Abraham, Jayanthi

    2015-01-01

    The development of eco-friendly alternative to chemical synthesis of metal nanoparticles is of great challenge among researchers. The present study aimed to investigate the biological synthesis, characterization, antimicrobial study and synergistic effect of silver and zinc oxide nanoparticles against clinical pathogens using Pichia fermentans JA2. The extracellular biosynthesis of silver and zinc oxide nanoparticles was investigated using Pichia fermentans JA2 isolated from spoiled fruit pulp bought in Vellore local market. The crystalline and stable metallic nanoparticles were characterized evolving several analytical techniques including UV-visible spectrophotometer, X-ray diffraction pattern analysis and FE-scanning electron microscope with EDX-analysis. The biosynthesized metallic nanoparticles were tested for their antimicrobial property against medically important Gram positive, Gram negative and fungal pathogenic microorganisms. Furthermore, the biosynthesized nanoparticles were also evaluated for their increased antimicrobial activities with various commercially available antibiotics against clinical pathogens. The biosynthesized silver nanoparticles inhibited most of the Gram negative clinical pathogens, whereas zinc oxide nanoparticles were able to inhibit only Pseudomonas aeruginosa. The combined effect of standard antibiotic disc and biosynthesized metallic nanoparticles enhanced the inhibitory effect against clinical pathogens. The biological synthesis of silver and zinc oxide nanoparticles is a novel and cost-effective approach over harmful chemical synthesis techniques. The metallic nanoparticles synthesized using Pichia fermentans JA2 possess potent inhibitory effect that offers valuable contribution to pharmaceutical associations.

  12. Fabrication of Vertically Aligned Carbon Nanotube or Zinc Oxide Nanorod Arrays for Optical Diffraction Gratings.

    PubMed

    Kim, Jeong; Kim, Sun Il; Cho, Seong-Ho; Hwang, Sungwoo; Lee, Young Hee; Hur, Jaehyun

    2015-11-01

    We report on new fabrication methods for a transparent, hierarchical, and patterned electrode comprised of either carbon nanotubes or zinc oxide nanorods. Vertically aligned carbon nanotubes or zinc oxide nanorod arrays were fabricated by either chemical vapor deposition or hydrothermal growth, in combination with photolithography. A transparent conductive graphene layer or zinc oxide seed layer was employed as the transparent electrode. On the patterned surface defined using photoresist, the vertically grown carbon nanotubes or zinc oxides could produce a concentrated electric field under applied DC voltage. This periodic electric field was used to align liquid crystal molecules in localized areas within the optical cell, effectively modulating the refractive index. Depending on the material and morphology of these patterned electrodes, the diffraction efficiency presented different behavior. From this study, we established the relationship between the hierarchical structure of the different electrodes and their efficiency for modulating the refractive index. We believe that this study will pave a new path for future optoelectronic applications. PMID:26726580

  13. Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

    SciTech Connect

    Shan, F.K.; Liu, G.X.; Lee, W.J.; Lee, G.H.; Kim, I.S.; Shin, B.C.

    2005-07-15

    Gallium oxide (Ga{sub 2}O{sub 3}) thin films were deposited on silicon (100) and sapphire (001) substrates using the plasma-enhanced atomic layer deposition (PEALD) technique with an alternating supply of reactant source, [(CH{sub 3}){sub 2}GaNH{sub 2}]{sub 3}, and oxygen plasma. The thin films were annealed at different temperatures (500, 700, and 900 deg. C, respectively) in a rapid thermal annealing system for 1 min. It was found that Ga{sub 2}O{sub 3} thin films deposited by PEALD showed excellent step coverage characteristics. X-ray diffraction measurements showed that the as-deposited thin film was amorphous. However, the thin films annealed at temperatures higher than 700 deg. C showed a (400) orientation of the monoclinic structure. An atomic force microscope was used to investigate the surface morphologies of the thin films. The thin films showed very smooth surfaces; the roughness of the as-deposited thin film was about 4 A . With increasing annealing temperature, the thin film became rougher compared with that annealed at lower temperatures. A double-beam spectrophotometer was used to measure the transmittances of the thin films on the sapphire substrates. The thin films showed a very high transmittance (nearly 100%). The band-gap energies of the thin films were determined by a linear fit of the transmittance spectra and were calculated to be between 5.0 and 5.24 eV. The electrical properties of thin films of Pt/film/Si structure were also investigated. It was found that, with increasing annealing temperature, the insulating characteristics of the Ga{sub 2}O{sub 3} thin films were significantly improved. Spectroscopic ellipsometry was used to derive the refractive indices and the thicknesses of the thin films. The refractive indices of the thin films showed normal dispersion behavior. The refractive indices of the thin films annealed at low temperatures were smaller than those annealed at high temperatures.

  14. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction. PMID:24123578

  15. A study of mercuric oxide and zinc-air battery life in hearing aids.

    PubMed

    Sparkes, C; Lacey, N K

    1997-09-01

    The requirement to phase out mercuric oxide (mercury) batteries on environmental grounds has led to the widespread introduction of zinc-air technology. The possibility arises that high drain hearing aids may not be adequately catered for by zinc-air cells, leading to poor performance. This study investigated the hearing aid user's ability to perceive differences between zinc-air and mercury cells in normal everyday usage. The data was collected for 100 experienced hearing aid users in field trials. Users report 50 per cent greater life for zinc-air cells in high power aids and 28 per cent in low power aids. The average life of the zinc-air cells range from 15 days in high power to 34 days in low power aids. Users are able to perceive a difference in sound quality in favour of zinc-air cells for low and medium power aids. The hearing aid population is not disadvantaged by phasing out mercury cells. PMID:9373545

  16. Effect of solvents on the synthesis of nano-size zinc oxide and its properties

    SciTech Connect

    Kanade, K.G.; Kale, B.B. . E-mail: kbbb1@yahoo.com; Aiyer, R.C.; Das, B.K.

    2006-03-09

    The effect of the solvents on particle size and morphology of ZnO is investigated. The optical properties of nano ZnO were studied extensively. During this study, zinc oxalate was prepared in aqueous and organic solvents using zinc acetate and oxalic acid as precursors. The thermo-gravimetric analysis (TGA/DTA) showed formation of ZnO at 400 deg. C. Nano-size zinc oxide was obtained by thermal decomposition of aqueous and organic mediated zinc oxalate at 450 deg. C. The phase purity was confirmed by XRD and crystal size determined from transmission electron microscopy (TEM) was found to be 22-25 nm for the aqueous and 14 -17 nm in organic mediated ZnO. Scanning electron microscope (SEM) also revealed different nature of surfaces and microstructures for zinc oxide obtained in aqueous and organic solvents. The UV absorption spectra showed sharp absorption peaks with a blue shift for organic mediated ZnO, due to monodispersity and lower particle size. Sharp peaks and absence of any impurity peaks in photoluminescence spectra (PLS) complement the above observations.

  17. Radiation Stability of Zinc Oxide Pigment Modified by Zirconium Oxide and Aluminum Oxide Nanopowders

    SciTech Connect

    Mikhailov, M. M.; Neshchimenko, V. V.; Li Chundong

    2009-01-05

    The effect on the reflective spectra of heat treatment and modification of ZnO pigments by 1-30 wt.%ZrO{sub 2} and Al{sub 2}O{sub 3} nanoparticles has been investigated before and after irradiation by 100 keV protons with a fluence of 5x10{sup 15} cm{sup -2}. It is established that with the optimum concentration of 5 wt.% nanoparticles and the temperature of 800 deg. C a 20% increase in the radiation stability is observed for the modified ZnO pigment in comparison with the not modified pigment. The decrease of absorption in the modified pigments is determined by the decrease of the intensity of the absorption bands of the zinc vacancies (V{sub zn}{sup -}), oxygen vacancies (V{sub o}{sup +}) and donor-acceptor couples (V{sub zn}-{sup -}Zn{sub i}{sup 0})

  18. Extracellular synthesis of zinc oxide nanoparticle using seaweeds of gulf of Mannar, India

    PubMed Central

    2013-01-01

    Background The biosynthesis of metal nanoparticles by marine resources is thought to be clean, nontoxic, and environmentally acceptable “green procedures”. Marine ecosystems are very important for the overall health of both marine and terrestrial environments. The use of natural sources like Marine biological resources essential for nanotechnology. Seaweeds constitute one of the commercially important marine living renewable resources. Seaweeds such as green Caulerpa peltata, red Hypnea Valencia and brown Sargassum myriocystum were used for synthesis of Zinc oxide nanoparticles. Result The preliminary screening of physico-chemical parameters such as concentration of metals, concentration of seaweed extract, temperature, pH and reaction time revealed that one seaweed S. myriocystum were able to synthesize zinc oxide nanoparticles. It was confirmed through the, initial colour change of the reaction mixture and UV visible spectrophotometer. The extracellular biosynthesized clear zinc oxide nanoparticles size 36 nm through characterization technique such as DLS, AFM, SEM –EDX, TEM, XRD and FTIR. The biosynthesized ZnO nanoparticles are effective antibacterial agents against Gram-positive than the Gram-negative bacteria. Conclusion Based on the FTIR results, fucoidan water soluble pigments present in S. myriocystum leaf extract is responsible for reduction and stabilization of zinc oxide nanoparticles. by this approach are quite stable and no visible changes were observed even after 6 months. These soluble elements could have acted as both reduction and stabilizing agents preventing the aggregation of nanoparticles in solution, extracellular biological synthesis of zinc oxide nanoparticles of size 36 nm. PMID:24298944

  19. Synthesis and characterization of lanthanum doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Kumar, Vinod; Sonia, Suman, Kumar, Sacheen; Kumar, Dinesh

    2016-05-01

    La doped ZnO (Zn1-xLaxO, x = 0, 3, 6 and 9) were prepared via chemical co-precipitation method using Zinc Acetate, Lanthanum Acetate and Sodium Hydroxide at 50°C. Hydrate nanoparticles were annealed in air at 300°C for 3 hours. The synthesized samples have been characterized by powder X-ray diffraction and UV-Visiblespectrophotometer. The XRD measurement revealsthat the prepared nanoparticles have different microstructure without changing a hexagonal wurtzite structure. The result shows the change in nanoparticles size with the increment of lanthanum concentration for lower concentration for x = 0 to 6 and decreases at x = 9.

  20. Surface morphology and electrical transport of rapid thermal annealed chromium-doped indium zinc oxides: The influence of zinc interstitials and out-diffusion

    SciTech Connect

    Hsu, C. Y.

    2013-12-09

    We investigate the complex impedance (CI) spectra of chromium-doped indium zinc oxide (CIZO) films with different rapid thermal annealing (RTA) temperatures. The CI spectra drawn from the impedance contributions of Zn-O and In-O bondings in CIZO films were analyzed by two sets of parallel resistance and capacitance components in series. The result demonstrates that zinc interstitials controls electron concentration and transition of electrical transport from semiconducting to metallic. At higher RTA temperature, high-density zinc interstitial promotes Zn atom diffusion from the surface, modifying surface morphology.