Gallium

USGS Publications Warehouse

Foley, Nora K.; Jaskula, Brian W.; Kimball, Bryn E.; Schulte, Ruth F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. Gallium is used in a wide variety of products that have microelectronic components containing either gallium arsenide (GaAs) or gallium nitride (GaN). GaAs is able to change electricity directly into laser light and is used in the manufacture of optoelectronic devices (laser diodes, light-emitting diodes [LEDs], photo detectors, and solar cells), which are important for aerospace and telecommunications applications and industrial and medical equipment. GaAs is also used in the production of highly specialized integrated circuits, semiconductors, and transistors; these are necessary for defense applications and high-performance computers. For example, cell phones with advanced personal computer-like functionality (smartphones) use GaAs-rich semiconductor components. GaN is used principally in the manufacture of LEDs and laser diodes, power electronics, and radio-frequency electronics. Because GaN power transistors operate at higher voltages and with a higher power density than GaAs devices, the uses for advanced GaN-based products are expected to increase in the future. Gallium technologies also have large power-handling capabilities and are used for cable television transmission, commercial wireless infrastructure, power electronics, and satellites. Gallium is also used for such familiar applications as screen backlighting for computer notebooks, flat-screen televisions, and desktop computer monitors.Gallium is dispersed in small amounts in many minerals and rocks where it substitutes for elements of similar size and charge, such as aluminum and zinc. For example, gallium is found in small amounts (about 50 parts per million) in such aluminum-bearing minerals as diaspore-boehmite and gibbsite, which form bauxite deposits, and in the zinc-sulfide mineral sphalerite, which is found in many mineral deposits. At the present time, gallium metal is derived mainly as a

Efficacy of Nd:YAG and GaAlAs lasers in comparison to 2% fluoride gel for the treatment of dentinal hypersensitivity.

PubMed

Soares, Marília De Lima; Porciúncula, Geane Bandeira; Lucena, Mara Ilka Holanda Medeiros De; Gueiros, Luiz Alcino Monteiro; Leão, Jair Carneiro; Carvalho, Alessandra De Albuquerque Tavares

2016-01-01

Lasers demonstrate excellent therapeutic action and are often employed in dentistry for the treatment of diverse clinical conditions. The aim of this study was to compare the efficacy of neodymium-doped yttrium-aluminum-garnet (Nd:YAG) laser, gallium-aluminum-arsenide (GaAlAs) laser, and 2% neutral fluoride gel in the treatment of dentinal hypersensitivity. Twenty-three patients were evaluated, involving a total of 48 quadrants with at least 1 tooth with dentinal hypersensitivity (89 teeth total). Pain intensity was recorded on a visual analog scale at the time of clinical examination (baseline), immediately after treatment, and 1 week posttreatment. Teeth were treated with 60 seconds of 2% neutral fluoride gel application or 60 seconds of laser treatment-Nd:YAG laser at a distance of 0.5 cm (unfocused; 1 W and 10 Hz for 60 seconds, perpendicular to the cervical surfaces) or GaAlAs laser in contact (40 mW; 4 J/cm²; spot: 0.028 cm²; 15 seconds per point on 4 points [mesial, medial, distal, and apical])-as well as sham treatments so that patients remained blind to their treatment group. All treatments provided adequate pain reduction immediately posttreatment, but laser treatments resulted in significantly greater reductions in pain intensity.

Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators.

PubMed

Hamoumi, M; Allain, P E; Hease, W; Gil-Santos, E; Morgenroth, L; Gérard, B; Lemaître, A; Leo, G; Favero, I

2018-06-01

We report on a systematic study of nanomechanical dissipation in high-frequency (≈300  MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon interactions are shown to contribute with a loss background fading away at cryogenic temperatures (3 K). Atomic layer deposition of alumina at the surface modifies the quality factor of resonators, pointing towards the importance of surface dissipation. The temperature evolution is accurately fitted by two-level systems models, showing that nanomechanical dissipation in gallium arsenide resonators directly connects to their microscopic properties. Two-level systems, notably at surfaces, appear to rule the damping and fluctuations of such high-quality crystalline nanomechanical devices, at all temperatures from 3 to 300 K.

Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators

NASA Astrophysics Data System (ADS)

Hamoumi, M.; Allain, P. E.; Hease, W.; Gil-Santos, E.; Morgenroth, L.; Gérard, B.; Lemaître, A.; Leo, G.; Favero, I.

2018-06-01

We report on a systematic study of nanomechanical dissipation in high-frequency (≈300 MHz ) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon interactions are shown to contribute with a loss background fading away at cryogenic temperatures (3 K). Atomic layer deposition of alumina at the surface modifies the quality factor of resonators, pointing towards the importance of surface dissipation. The temperature evolution is accurately fitted by two-level systems models, showing that nanomechanical dissipation in gallium arsenide resonators directly connects to their microscopic properties. Two-level systems, notably at surfaces, appear to rule the damping and fluctuations of such high-quality crystalline nanomechanical devices, at all temperatures from 3 to 300 K.

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

DOEpatents

Hogan, S.J.

1983-03-13

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Characterization of solar cells for space applications. Volume 13: Electrical characteristics of Hughes LPE gallium arsenide solar cells as a function of intensity and temperature

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Beckert, D. M.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1980-01-01

Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.

A FETISH for gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barron, A.R.

1996-12-31

An overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [({sup t}Bu)GaS]{sub 4}, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulatingmore » properties of cubic-GaS make it suitable as the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).« less

Computer simulation of radiation damage in gallium arsenide

NASA Technical Reports Server (NTRS)

Stith, John J.; Davenport, James C.; Copeland, Randolph L.

1989-01-01

A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

Gallium Arsenide Domino Circuit

NASA Technical Reports Server (NTRS)

Yang, Long; Long, Stephen I.

1990-01-01

Advantages include reduced power and high speed. Experimental gallium arsenide field-effect-transistor (FET) domino circuit replicated in large numbers for use in dynamic-logic systems. Name of circuit denotes mode of operation, which logic signals propagate from each stage to next when successive stages operated at slightly staggered clock cycles, in manner reminiscent of dominoes falling in a row. Building block of domino circuit includes input, inverter, and level-shifting substages. Combinational logic executed in input substage. During low half of clock cycle, result of logic operation transmitted to following stage.

Assessment of arsenic exposures and controls in gallium arsenide production.

PubMed

Sheehy, J W; Jones, J H

1993-02-01

The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator.

PubMed

Shambat, Gary; Ellis, Bryan; Mayer, Marie A; Majumdar, Arka; Haller, Eugene E; Vučković, Jelena

2011-04-11

We demonstrate a gallium arsenide photonic crystal cavity injection-based electro-optic modulator coupled to a fiber taper waveguide. The fiber taper serves as a convenient and tunable waveguide for cavity coupling with minimal loss. Localized electrical injection of carriers into the cavity region via a laterally doped p-i-n diode combined with the small mode volume of the cavity enable ultra-low energy modulation at sub-fJ/bit levels. Speeds of up to 1 GHz are demonstrated with photoluminescence lifetime measurements revealing that the ultimate limit goes well into the tens of GHz. © 2011 Optical Society of America

Gallium arsenide quantum well-based far infrared array radiometric imager

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Jhabvala, Murzy D.

1991-01-01

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Low temperature recombination and trapping analysis in high purity gallium arsenide by microwave photodielectric techniques

NASA Technical Reports Server (NTRS)

Khambaty, M. B.; Hartwig, W. H.

1972-01-01

Some physical theories pertinent to the measurement properties of gallium arsenide are presented and experimental data are analyzed. A model for explaining recombination and trapping high purity gallium arsenide, valid below 77 K is assembled from points made at various places and an appraisal is given of photodielectric techniques for material property studies.

Evaluation of the male reproductive toxicity of gallium arsenide.

PubMed

Bomhard, Ernst M; Cohen, Samuel M; Gelbke, Heinz-Peter; Williams, Gary M

2012-10-01

Gallium arsenide is an important semiconductor material marketed in the shape of wafers and thus is not hazardous to the end user. Exposure to GaAs particles may, however, occur during manufacture and processing. Potential hazards require evaluation. In 14-week inhalation studies with small GaAs particles, testicular effects have been reported in rats and mice. These effects occurred only in animals whose lungs showed marked inflammation and also had hematologic changes indicating anemia and hemolysis. The time- and concentration-dependent progressive nature of the lung and blood effects together with bioavailability data on gallium and arsenic lead us to conclude that the testicular/sperm effects are secondary to hypoxemia resulting from lung damage rather than due to a direct chemical effect of gallium or arsenide. Conditions leading to such primary effects are not expected to occur in humans at production and processing sites. This has to be taken into consideration for any classification decision for reproductive toxicity; especially a category 1 according to the EU CLP system is not warranted. Copyright © 2012 Elsevier Inc. All rights reserved.

A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

NASA Technical Reports Server (NTRS)

Hurley, John S.

1990-01-01

Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide.

DTIC Science & Technology

1980-12-01

AFIT/GEO/EE/80D-1 I -’ SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ...EE/80D-1 (\\) SYSTEM OPTIMIZATION OF THE GLOW DISCHARGE OPTICAL SPECTROSCOPY TECHNIQUE USED FOR IMPURITY PROFILING OF ION IMPLANTED GALLIUM ARSENIDE...semiconductors, specifically annealed and unan- nealed ion implanted gallium arsenide (GaAs). Methods to improve the sensitivity of the GDOS system have

GaAlAs laser irradiation induces active tertiary dentin formation after pulpal apoptosis and cell proliferation in rat molars.

PubMed

Shigetani, Yoshimi; Sasa, Natsuki; Suzuki, Hironobu; Okiji, Takashi; Ohshima, Hayato

2011-08-01

This study aimed to clarify pulpal responses to gallium-aluminum-arsenide (GaAlAs) laser irradiation. Maxillary first molars of 8-week-old rats were irradiated at an output power of 0.5 or 1.5 W for 180 seconds, and the samples were collected at intervals of 0 to 14 days. The demineralized paraffin sections were processed for immunohistochemistry for heat-shock protein (HSP)-25 and nestin in addition to cell proliferation assay using bromodeoxyuridine (BrdU) labeling and apoptosis assay using deoxynucleotidyl transferase deoxyuridine triphosphate nick end labeling (TUNEL). Intense HSP-25 and nestin immunoreactivities in the odontoblast layer were weakened immediately after 0.5-W irradiation and recovered on day 1, resulting in slight tertiary dentin formation by day 14. On the contrary, 1.5-W irradiation immediately induced the loss of HSP-25 and nestin-immunoreactivities in the odontoblast layer. On day 1, numerous TUNEL-positive cells appeared in a degenerative zone that was surrounded by intense HSP-25 immunoreactivity. BrdU-positive cells occurred within the intensely HSP-25-immunopositive areas during days 2 through 5, whereas TUNEL-positive cells gradually decreased in number by day 5. HSP-25- and nestin-positive odontoblast-like cells were arranged along the pulp-dentin border by day 7, resulting in remarkable tertiary dentin formation on day 14. The output energy determined pulpal healing patterns after GaAlAs laser irradiation; the higher energy induced the apoptosis in the affected dental pulp including odontoblasts followed by active cell proliferation in the intense HSP-25-immunoreactive areas surrounding the degenerative tissue, resulting in abundant tertiary dentin formation. Thus, the optimal GaAlAs laser irradiation elicited intentional tertiary dentin formation in the dental pulp. Copyright © 2011 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

NASA Technical Reports Server (NTRS)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.; Miyahira, T. F.; Weiss, R. S.

1981-01-01

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

Light emitting diodes as a plant lighting source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C.

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used inmore » a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.« less

Gallium arsenide solar array subsystem study

NASA Technical Reports Server (NTRS)

Miller, F. Q.

1982-01-01

The effects on life cycle costs of a number of technology areas are examined for a gallium arsenide space solar array. Four specific configurations were addressed: (1) a 250 KWe LEO mission - planer array; (2) a 250 KWe LEO mission - with concentration; (3) a 50 KWe GEO mission planer array; (4) a 50 KWe GEO mission - with concentration. For each configuration, a baseline system conceptual design was developed and the life cycle costs estimated in detail. The baseline system requirements and design technologies were then varied and their relationships to life cycle costs quantified. For example, the thermal characteristics of the baseline design are determined by the array materials and masses. The thermal characteristics in turn determine configuration, performance, and hence life cycle costs.

A comparative evaluation to assess the efficacy of 5% sodium fluoride varnish and diode laser and their combined application in the treatment of dentin hypersensitivity

PubMed Central

Suri, Isha; Singh, Poonam; Shakir, Quaid Johar; Shetty, Arvind; Bapat, Ranjeet; Thakur, Roshani

2016-01-01

Background: Dentin hypersensitivity (DH) is an age old complaint with a great number of treatment modalities, but none of these are totally effective till date. Lasers being one of the latest treatment options in periodontics, a study was conducted to test the efficacy of diode laser (DL) in DH alone and in comparison with 5% sodium fluoride (NaF) varnish. Aim: The aim of the present study was to compare the effectiveness of 5% topical NaF varnish and 980 nm gallium aluminum arsenide (GaAlAs) DL alone and combination of 5% NaF + 980 nm GaAlAs DL in the management of DH. Materials and Methods: The study was conducted on 120 teeth in thirty patients with DH assessed by tactile and air blast (AB) stimuli measured by visual analog scale (VAS). Teeth were randomly divided into Group 1 (P) placebo-treated control group, Group 2 (NaF) treated by 5% NaF varnish, Group 3 (DL) treated with 980 nm DL, and Group 4 (NaF + DL) treated with both 5% NaF varnish and 980 nm DL (combination group). Results: There was a significant reduction in DH. The VAS reduction percentages were calculated, and there was a significant decrease in DH above all in G4 (NaF + DL) than G3 (DL) and G2 (NaF). Conclusion: Even though all the three groups (2, 3, and 4) showed improvement in terms of DH reduction, 5% NaF varnish with DL showed the best results among all the groups. PMID:27563205

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

NASA Technical Reports Server (NTRS)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

PubMed

Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

2015-03-01

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

Gallium Arsenide solar cell radiation damage experiment

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Kinnison, J. D.; Herbert, G. A.; Meulenberg, A.

1991-01-01

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the

Producing gallium arsenide crystals in space

NASA Technical Reports Server (NTRS)

Randolph, R. L.

1984-01-01

The production of high quality crystals in space is a promising near-term application of microgravity processing. Gallium arsenide is the selected material for initial commercial production because of its inherent superior electronic properties, wide range of market applications, and broad base of on-going device development effort. Plausible product prices can absorb the high cost of space transportation for the initial flights provided by the Space Transportation System. The next step for bulk crystal growth, beyond the STS, is planned to come later with the use of free flyers or a space station, where real benefits are foreseen. The use of these vehicles, together with refinement and increasing automation of space-based crystal growth factories, will bring down costs and will support growing demands for high quality GaAs and other specialty electronic and electro-optical crystals grown in space.

Gallium-arsenide process evaluation based on a RISC microprocessor example

NASA Astrophysics Data System (ADS)

Brown, Richard B.; Upton, Michael; Chandna, Ajay; Huff, Thomas R.; Mudge, Trevor N.; Oettel, Richard E.

1993-10-01

This work evaluates the features of a gallium-arsenide E/D MESFET process in which a 32-b RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivity of the microprocessor and other large circuit blocks to different process parameters is analyzed, and recommendations for future process features, circuit approaches, and layout styles are made. These recommendations are reflected in the design of a second microprocessor using a more advanced process that achieves much higher density and performance.

Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater

Testing of gallium arsenide solar cells on the CRRES vehicle

NASA Technical Reports Server (NTRS)

Trumble, T. M.

1985-01-01

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage.

The Growth of Expitaxial GaAs and GaAlAs on Silicon Substrates by OMVPE

DTIC Science & Technology

1988-08-01

structures have been grown on semi-insulating gallium arsenide substrates, and on high-resistivity silicon substrates using a two stage growth technique...fully in Quarter 9. 2. MATERIALS GROWTH 2.1 DOPING OF GALLIUM ARSENIDE FOR FETs As reported in quarter 7, doping levels for GaAs/SI 4ere found to be a...FET structures on both GaAs and Si substrates. A number of FET layers have been grown to the GAT4 specification on semi-insulating gallium arsenide

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Radiation damage of gallium arsenide production cells

NASA Technical Reports Server (NTRS)

Mardesich, N.; Garlick, G. F. J.

1987-01-01

High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

Comparative clinical evaluation of the immediate and late analgesic effect of GaAlAs diode lasers of 830 and 660 nm in the treatment of dentine pain: preliminary results

NASA Astrophysics Data System (ADS)

Ladalardo, Thereza C.; Mangabeira Albernaz, Pedro L.; Brugnera, Aldo, Jr.; Zanin, Fatima A. A.; Siqueira, Jose T.; Pinheiro, Antonio L. B.

2002-06-01

In this comparative clinical study, we aimed at evaluating the immediate and late analgesic effect of GaAlAs diode lasers of 660 nm and 830 nm in treatment of dentine pain. We used GaAlAs diode lasers of 660 nm and 830 nm with 35 mW, continuous wave emission, spot size 1 mm2 and a dosage of 4 joules/cm2 applied to the cervical dentine surface. In total 4 treatment sessions were performed at intervals of 7 days in a period of 4 consecutive weeks. A total of 40 teeth treated were divided into two groups comprising 20 teeth each: one group irradiated with a 660 nm wavelength laser, and the other one with a 830 nm wavelength laser. By means of a quantitative visual analogue scale (V.A.S.), we measured the sensitive responses to cold stimulus pre- treatment, and at a follow-up period of 15 and 30 minutes post-treatment in both groups in order to evaluate the immediate analgesic effect. The late effect was evaluated at a follow-up period of 15 and 30 days. Using the GaAlAs diode laser of 660 nm wavelength resulted in better levels of dentine desensitization, at both immediate and late analgesic effect analysis compared with the use of the GaAlAs diode laser of 830 nm wavelength.

Contact formation in gallium arsenide solar cells

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1988-01-01

Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.

High-temperature optically activated GaAs power switching for aircraft digital electronic control

NASA Technical Reports Server (NTRS)

Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.

1983-01-01

Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

Gallium arsenide/gold nanostructures deposited using plasma method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangla, O.; Physics Department, Hindu College, University of Delhi, Delhi, 110007; Roy, S.

2016-05-23

The fabrication of gallium arsenide (GaAs) nanostructures on gold coated glass, quartz and silicon substrates using the high fluence and highly energetic ions has been reported. The high fluence and highly energetic ions are produced by the hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. The nanostructures having mean size about 14 nm, 13 nm and 18 nm are deposited on gold coated glass, quartz and silicon substrates, respectively. The optical properties of nanostructures studied using absorption spectra show surface plasmon resonance peak of gold nanoparticles. In addition, the band-gap of GaAs nanoparticles is more than that ofmore » bulk GaAs suggesting potential applications in the field of optoelectronic and sensor systems.« less

Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

DTIC Science & Technology

1985-04-01

activation energies than previously possible. Electron traps and hole traps with energies less than 50 meV were observed for the first time in GaAs...developed in our laboratory to photoexcite electrons in a given energy range in the conduction band and then measure the relaxation of these carriers...limitations on the electron energy may be required. CURRENT AND FUTURE EFFORTS The possibility of ballistic electron transport in gallium arsenide has been

The interaction of gold with gallium arsenide

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1988-01-01

Gold and gold-based alloys, commonly used as solar-cell contact materials, are known to react readily with gallium arsenide. Experiments designed to identify the mechanisms involved in these GaAs-metal interactions have yielded several interesting results. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are also explained by invoking this mechanism.

Skylab experiment performance evaluation manual. Appendix J: Experiment M555 gallium arsenide single crystal growth (MSFC)

NASA Technical Reports Server (NTRS)

Byers, M. S.

1973-01-01

Analyses for Experiment M555, Gallium Arsenide Single Crystal Growth (MSFC), to be used for evaluating the performance of the Skylab corollary experiments under preflight, inflight, and post-flight conditions are presented. Experiment contingency plan workaround procedure and malfunction analyses are presented in order to assist in making the experiment operationally successful.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% ofmore » efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.« less

Magneto-electric transition in nickel-gallium arsenide-nickel multiferroic structure

NASA Astrophysics Data System (ADS)

Galichyan, T. A.; Filippov, D. A.; Laletin, V. M.; Firsova, T. O.; Poddubnaya, N. N.

2018-04-01

Experimental studies of the magnetoelectric effect are presented in structures manufactured by electrolytic deposition of nickel on a substrate of gallium arsenide. It is shown that the use of gold-germanium-nickel sublayer, when sprayed on a substrate, significantly improves the adhesion between electrolytically deposited nickel and substrate. Linear and nonlinear magnetoelectric effects on the alternating magnetic field are observed in these structures. Both effects have resonant character and the resonance frequency of the nonlinear effect is twice less than that of the linear effect. In weak fields, the value of the nonlinear magnetoelectric effect is in quadratic dependence on the alternating magnetic field and unlike the linear magnetoelectric effect, it does not depend on the bias field.

Gallium arsenide processing for gate array logic

NASA Technical Reports Server (NTRS)

Cole, Eric D.

1989-01-01

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Gallium arsenide solar cells-status and prospects for use in space

NASA Technical Reports Server (NTRS)

Brandhorst, H. W.; Flood, D.; Weinberg, I.

1981-01-01

Gallium Arsenide solar cells now equal or surpass the ubiquitous silicon solar cells in efficiency, radiation resistance, annealability, and in the capability for producing usable power output at elevated temperatures. NASA has developed a long-range research and development program to capitalize on these manifold advantages. In this paper we review the current state and future prospects for R&D in this promising solar cell material, and indicate the progress being made toward development of GaAs cells suitable for a variety of space missions. Results are presented from studies which demonstrate conclusively that GaAs cells can provide a net mission cost and weight savings for certain important mission classes.

A I-V analysis of irradiated Gallium Arsenide solar cells

NASA Technical Reports Server (NTRS)

Heulenberg, A.; Maurer, R. H.; Kinnison, J. D.

1991-01-01

A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium arsenide (GaAs) solar cells irradiated with 1-MeV electrons and 10-MeV protons. It was concluded that junction regions (J sub r) dominate nearly all GaAs cells tested, except for irradiated Mitsubishi cells, which appear to have a different doping profile. Irradiation maintains or increases the dominance by J sub r. Proton irradiation increases J sub r more than does electron irradiation. The U.S. cells were optimized for beginning of life (BOL) and the Japanese for end of life (EOL). I-V analysis indicates ways of improving both the BOL and EOL performance of GaAs solar cells.

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2000-01-01

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Zinc diffusion in gallium arsenide and the properties of gallium interstitials

NASA Astrophysics Data System (ADS)

Bracht, H.; Brotzmann, S.

2005-03-01

We have performed zinc diffusion experiments in gallium arsenide at temperatures between 620°C and 870°C with a dilute Ga-Zn source. The low Zn partial pressure established during annealing realizes Zn surface concentrations of ⩽2×1019cm-3 , which lead to the formation of characteristic S-shaped diffusion profiles. Accurate modeling of the Zn profiles, which were measured by means of secondary ion mass spectroscopy, shows that Zn diffusion under the particular doping conditions is mainly mediated by neutral and singly positively charged Ga interstitials via the kick-out mechanism. We determined the temperature dependence of the individual contributions of neutral and positively charged Ga interstitials to Ga diffusion for electronically intrinsic conditions. The data are lower than the total Ga self-diffusion coefficient and hence consistent with the general interpretation that Ga diffusion under intrinsic conditions is mainly mediated by Ga vacancies. Our results disprove the general accepted interpretation of Zn diffusion in GaAs via doubly and triply positively charged Ga interstitials and solves the inconsistency related to the electrical compensation of the acceptor dopant Zn by the multiply charged Ga interstitials.

Thermal stability of gallium arsenide solar cells

NASA Astrophysics Data System (ADS)

Papež, Nikola; Škvarenina, Ľubomír.; Tofel, Pavel; Sobola, Dinara

2017-12-01

This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30-650 °C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 °C thermal processing, its current-voltage characteristic remained without a significant change.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary

NASA Technical Reports Server (NTRS)

1988-01-01

Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

NASA Technical Reports Server (NTRS)

O'Neill, Mark J.; Piszczor, Michael F.

1988-01-01

The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

Low-level Laser Therapy on Postoperative Pain after Mandibular Third Molar Surgery

PubMed Central

Hamid, May Ayad

2017-01-01

Introduction: The analgesic effect of low-level laser therapy (LLLT) after mandibular third molar (MTM) extraction is controversial. The aim is to evaluate the effect of intraoral LLLT on postoperative pain after MTMs extraction. Methods: Thirty patients with bilateral symmetrical impacted MTMs underwent surgical extractions. Experimental and control sides were randomly selected to receive LLLT or placebo. Following suturing, a dental assistant applied 810 nm gallium aluminum arsenide (GaAlAs) at three points for 30 s each with a total energy of 9 J. Pain was recorded on a visual analog scale on the 7 successive days. Results: Data analyzed by IBM SPSS Statistics 23 for Windows with P ≤ 0.05 significance level. LLLT appeared to have a high significant effect on pain reduction; however, there was a mild increase in pain after the 4th day. Conclusion: Intraoral 810 nm GaAlAs is effective in reducing postoperative pain when a dose of 32.86 J/cm2 is used. PMID:29264287

Temperature dependence of carrier capture by defects in gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Modine, Normand A.

2015-08-01

This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structuremore » that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.« less

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

NASA Astrophysics Data System (ADS)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Monte Carlo simulation to calculate the rate of 137Cs gamma rays dispersion in gallium arsenide compound

NASA Astrophysics Data System (ADS)

Haider, F. A.; Chee, F. P.; Abu Hassan, H.; Saafie, S.

2017-01-01

Radiation effects on Gallium Arsenide (GaAs) have been tested by exposing samples to Cesium-137 (137Cs) gamma rays. Gallium Arsenide is a basic photonic material for most of the space technology communication, and, therefore, lends itself for applications where this is of concern. Monte Carlo simulations of interaction between direct ionizing radiation and GaAs structure have been performed in TRIM software, being part of SRIM 2011 programming package. An adverse results shows that energy dose does not govern the displacement of atoms and is dependent on the changes of incident angles and thickness of the GaAs target element. At certain thickness of GaAs and incident angle of 137Cs ion, the displacement damage is at its highest value. From the simulation result, it is found that if the thickness of the GaAs semiconductor material is small compared to the projected range at that particular incident energy, the energy loss in the target GaAs will be small. Hence, when the depth of semiconductor material is reduced, the range of damage in the target also decreased. However, the other factors such as quantum size effect, the energy gap between the conduction and valence band must also be taken into consideration when the dimension of the device is diminished.

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Fundamental studies of the metallurgical, electrical, and optical properties of gallium phosphide and gallium phosphide alloys

NASA Technical Reports Server (NTRS)

1972-01-01

Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.

Byproduct Metal Availability Constrained by Dynamics of Carrier Metal Cycle: The Gallium-Aluminum Example.

PubMed

Løvik, Amund N; Restrepo, Eliette; Müller, Daniel B

2016-08-16

Future availability of byproduct metals is not limited by geological stocks, but by the rate of primary production of their carrier metals, which in turn depends on the development of their in-use stocks, the product lifetimes, and the recycling rates. This linkage, while recognized conceptually in past studies, has not been adequately taken into account in resource availability estimates. Here, we determine the global supply potential for gallium up to 2050 based on scenarios for the global aluminum cycle, and compare it with scenarios for gallium demand derived from a dynamic model of the gallium cycle. We found that the gallium supply potential is heavily influenced by the development of the in-use stocks and recycling rates of aluminum. With current applications, a shortage of gallium is unlikely by 2050. However, the gallium industry may need to introduce ambitious recycling- and material efficiency strategies to meet its demand. If in-use stocks of aluminum saturate or decline, a shift to other gallium sources such as zinc or coal fly ash may be required.

Gallium arsenide pilot line for high performance components

NASA Astrophysics Data System (ADS)

1990-01-01

The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

Two stream instability in n-type gallium arsenide semiconductor quantum plasma

NASA Astrophysics Data System (ADS)

Ghosh, S.; Muley, Apurva

2018-01-01

By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

Development of a dome Fresnel lens/gallium arsenide photovoltaic concentrator for space applications

NASA Technical Reports Server (NTRS)

O'Neill, Mark J.; Piszczor, Michael F.

1987-01-01

A novel photovoltaic concentrator system is currently being developed. Phase I of the program, completed in late 1986, produced a conceptual design for the concentrator system, including an array weight and performance estimates based on optical, electrical, and thermal analyses. Phase II of the program, just underway, concerns the fabrication and testing of prototype concentrator panels of the design. The concentrator system uses dome Fresnel lenses for optical concentration; gallium arsenide concentrator cells for power generation; prismatic cell covers to eliminate gridline obscuration losses; a backplane radiator for heat rejection; and a honeycomb structure for the deployable panel assembly. The conceptual design of the system, its anticipated performance, and its estimated weight are reported.

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, T. J.; Deceglie, M. G.; Marion, B.

2013-06-01

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitablemore » water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.« less

Long-term effect of diode laser irradiation compared to sodium fluoride varnish in the treatment of dentine hypersensitivity in periodontal maintenance patients: a randomized controlled clinical study.

PubMed

Yilmaz, Hasan Guney; Kurtulmus-Yilmaz, Sevcan; Cengiz, Esra

2011-11-01

The aim of this clinical study was to evaluate and compare the desensitizing effects of a gallium?aluminum?arsenide (GaAlAs) laser and sodium fluoride (NaF) varnish on dentine hypersensitivity (DH) in periodontal maintenance patients. The use of lasers opens a new dimension in the treatment of DH. Forty-eight patients with 244 teeth affected by DH were included in the trial. To be included in the study, the subjects had to have 4 or more hypersensitive teeth at different quadrants. Selected teeth were randomly assigned to a GaAlAs laser group, placebo laser group, NaF varnish group, or a placebo NaF varnish group. Laser therapy was performed at 8.5?J/cm(2) energy density. In the placebo laser group, the same laser without laser emission was used. In the NaF varnish group, the varnish was painted at the cervical region of the teeth. In the placebo NaF varnish group, the same treatment procedures were performed with a saline solution. DH was assessed with a visual analog scale (VAS); immediately, at 1 week, and at 1, 3, and 6 months after treatments. Intra-group time-dependent data were analyzed by Friedman's test, and Wilcoxon's rank sum test was used to evaluate the differences within groups. GaAlAs laser and NaF varnish treatments resulted in a significant reduction in the VAS scores immediately after treatments that were maintained throughout the study when compared to the baseline and placebo treatments. In the NaF group, there was a significant increase in the VAS scores at 3 and 6 months compared to at 1 week and 1 month. The placebo treatments showed no significant changes in VAS scores throughout the study period. Within the limits of the study, GaAlAs laser irradiation was effective in the treatment of DH, and it is a more comfortable and faster procedure than traditional DH treatment.

Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

1989-01-01

In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

DTIC Science & Technology

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2002-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Third Working Meeting on Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Walker, G. H. (Compiler)

1976-01-01

Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

NASA Astrophysics Data System (ADS)

Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

2018-02-01

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Connolly, D. J.

1986-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input

NASA Astrophysics Data System (ADS)

Oxley, C. H.; Coaker, B. M.; Priestley, N. E.

2003-04-01

A gallium arsenide microwave monolithic integrated circuit (MMIC) power amplifier (M/ACom type MAAM71100) has been measured using infra-red microscope technology, with and without the application of a RF input signal. A reduction of approximately 10 °C in chip temperature was observed with the application of a RF input signal, which will influence the MTTF of the chip. Further, the measurement technique may be used to monitor the thermal impedance and dynamic cooling of RF power devices under operational conditions in complex circuits.

Temperature changes induced by 809-nm GaAlAs laser at the implant-bone interface during simulated surface decontamination.

PubMed

Kreisler, Matthias; Al Haj, Haitham; D'Hoedt, Bernd

2003-02-01

The aim of the study was to investigate temperature changes at the implant-bone interface during simulated implant surface decontamination with a 809-nm gallium-aluminium-arsenid (GaAlAs) semiconductor laser. Stepped cylinder implants with a diameter of 3.8 mm and a length of 11 mm with two different surfaces (sand-blasted and acid etched, and hydroxyapatite-coated) were inserted into bone blocks cut from freshly resected pig femurs. Access holes of 0.5 mm were drilled into the bone, to allow K-type thermocouples to contact periimplant bone in different parts of the cavity. An artificial periimplant bone defect provided access for laser irradiation in the coronal third. A 600-micrometer optic fiber was used at a distance of 0.5 mm from the implant surface. Power output varied between 0.5 and 2.5 W in the continuous wave mode. The bone block was placed into a 37 degrees C water bath in order to simulate in vivo thermal conductivity and diffusitivity of heat. Temperature elevations during irradiation were registered for a period of 120 s. In mean, the critical threshold of 47 degrees C was exceeded after 9.0 s at 2.5 W, 12.5 s at 2.0 W, 18.0 s at 1.5 W and 30.5 s at 1.0 W. Surface characteristics did not have a significant effect on temperature elevations. In an energy-dependent manner, implant surface decontamination with an 809-nm GaAlAs laser must be limited in time to allow the implant and bone to cool down. Clinical guidelines are presented to avoid tissue damage.

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Wide band gap gallium arsenide nanoparticles fabricated using plasma method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, D., E-mail: dvjainnov@gmail.com; Mangla, O.; Physics Department, Hindu College, University of Delhi, Delhi, 110007

2016-05-23

In this paper, we have reported the fabrication of gallium arsenide (GaAs) nanoparticles on quartz placed at distance of 4.0 cm, 5.0 cm and 6.0 cm, respectively from top of anode. The fabrication has been carried out by highly energetic and high fluence ions of GaAs produced by hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. GaAs nanoparticles have mean size of about 23 nm, 16 nm and 14 nm for deposition at a distance of 4.0 cm, 5.0 cm and 6.0 cm, respectively. The nanoparticles are crystalline in nature as evident from X-ray diffraction patterns. The band gap of nanoparticles is found tomore » increase from 1.425 eV to 5.37 eV at 4.0 cm distance, which further increases as distance increases. The wide band gap observed for fabricated GaAs nanoparticles suggest the possible applications of nanoparticles in laser systems.« less

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

PubMed

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

2015-06-11

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Modeling of aluminum/gallium interdiffusion in aluminum gallium arsenide/gallium arsenide heterostructure materials

NASA Astrophysics Data System (ADS)

Tai, Cheng-Yu

There is considerable interest in interdiffusion in III-IV based structures, such as AlGaAs/GaAs heterojunctions and superlattices (SL). This topic is of practical and fundamental interest since it relates to the stability of devices based on superlattices and heterojunctions, as well as to fundamental diffusion theory. The main goals of this study are to obtain the Al/Ga interdiffusivity, to understand Al/Ga interdiffusion behavior, and to understand how Si doping enhances the diffusion in AlGaAs/GaAs structures. Our first approach entails experimental studies of Al/Ga interdiffusion using Molecular Beam Epitaxy (MBE) samples of AlGaAs/GaAs structures, with or without Si doping. SUPREM-IV.GS was used to model the Fermi-level dependencies and extract the diffusivities. The experimental results show that Al/Ga interdiffusion in undoped AlGaAs/GaAs structures is small, but can be greatly enhanced in doped materials. The extracted Al/Ga interdiffusivity values match well with the Al/Ga interdiffusivity values reported by other groups, and they appear to be composition-independent. The interdiffusivity values are smaller than published Ga self-diffusivity values which are often mistakenly assumed to be equivalent to the interdiffusivity. Another set of Al/Ga interdiffusion experiments using AlAs/GaAs SL were performed to study Al/Ga interdiffusion. The experimental results are consistent with the previously discussed heterostructure results. Using Darken's analysis and treating the AlAs/GaAs SL material as a non-ideal solution, ALAMODE was used to model our SL disordering results explicitly. Assuming that the Al/Ga interdiffusivity is different from the Ga and Al self-diffusivities, we extracted the Al self-diffusivity and the Al activity coefficient as a function of composition using published Ga self-diffusivity values. The simulation results fit well with the experimental results. The extracted Al self-diffusivity value is close to the extracted Al/Ga interdiffusivity but different from the Ga self-diffusivity. The last part of this thesis focuses on modeling localized Al/Ga disordering in AlGaAs/GaAs devices. We present a localized disordering process as a solution to controlling the lateral oxidation process in AlGaAs/GaAs materials. SUPREM can predict these localized disordering results and can help to design an annealing process corresponding to the required aperture size in devices.

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

Insertion Demonstrations of Digital Gallium Arsenide. OBP-80 Final Technical Report. Volume 1. Chip Set Schematics

DTIC Science & Technology

1992-01-01

In First Out FMEA Failure Mode Effects Analysis EDM Engineering Development Model GALU Generic Arithmetic Logic Unit GaAs Gallium Arsenide GTE Ground...Bl B>55 * 1585/IS1/B1 = B56 I$11146/I$3/B1 B= 57 I$2S146/I$2/B1 B= 58 * $1146/1$1/81 =>B59 * 1590/IS3/Bl B= 60 *1$590/IS2/Bl== B61 * 1590/IS1/B1 - B62...vote circuitry. It is known that only 60 fC of charge is needed to upset the latch elements. It is interesting to speculate how much charge is required

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

PubMed Central

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

2015-01-01

Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

Gallium arsenide processing elements for motion estimation full-search algorithm

NASA Astrophysics Data System (ADS)

Lopez, Jose F.; Cortes, P.; Lopez, S.; Sarmiento, Roberto

2001-11-01

The Block-Matching motion estimation algorithm (BMA) is the most popular method for motion-compensated coding of image sequence. Among the several possible searching methods to compute this algorithm, the full-search BMA (FBMA) has obtained great interest from the scientific community due to its regularity, optimal solution and low control overhead which simplifies its VLSI realization. On the other hand, its main drawback is the demand of an enormous amount of computation. There are different ways of overcoming this factor, being the use of advanced technologies, such as Gallium Arsenide (GaAs), the one adopted in this article together with different techniques to reduce area overhead. By exploiting GaAs properties, improvements can be obtained in the implementation of feasible systems for real time video compression architectures. Different primitives used in the implementation of processing elements (PE) for a FBMA scheme are presented. As a result, Pes running at 270 MHz have been developed in order to study its functionality and performance. From these results, an implementation for MPEG applications is proposed, leading to an architecture running at 145 MHz with a power dissipation of 3.48 W and an area of 11.5 mm2.

The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

PubMed

Borzabadi-Farahani, Ali

2017-04-01

Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

Progress to a Gallium-Arsenide Deep-Center Laser

PubMed Central

Pan, Janet L.

2009-01-01

Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers), which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

NASA Astrophysics Data System (ADS)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

A comparison of diode laser and Er:YAG lasers in the treatment of gingival melanin pigmentation.

PubMed

Simşek Kaya, Göksel; Yapici Yavuz, Günay; Sümbüllü, Muhammed A; Dayi, Ertunç

2012-03-01

This study compared the use of diode and Er:YAG lasers in treating gingival melanin pigmentation (GMP) in terms of gingival depigmentation, local anesthesia requirements, postoperative pain/discomfort, depigmentation effectiveness, and total treatment duration. Twenty patients (13 female, 7 male) referred with GMP were enrolled in the study. Patients were randomly divided into 2 groups. Group 1 was treated with a gallium aluminum arsenide diode laser with a continuous wavelength of 808 nm, and group 2 was treated with an Er:YAG laser with a continuous wavelength of 2,940 nm. Gingival depigmentation was performed by applying the laser at 1 W. Treatment was administered on a weekly basis until a normal pink gingival color was observable in clinical examination and photographs. In addition, patients were asked to evaluate the procedure by using a self-administered questionnaire. Procedures were carried out without the need for any topical or local anesthetic, and no unpleasant events occurred during the actual procedure or the healing period. The total length of treatment was significantly shorter with the diode laser (group 1) than with the Er:YAG laser (group 2; P < .05). No melanin recurrence was detected during any follow-up session. Diode and Er:YAG lasers administered at 1 W both result in satisfactory depigmentation of GMP. Copyright © 2012 Elsevier Inc. All rights reserved.

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

NASA Technical Reports Server (NTRS)

Littlejohn, M. A.; Anikara, R.

1972-01-01

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.

Study of sulfur bonding on gallium arsenide (100) surfaces using supercritical fluid extraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabauy, P.; Darici, Y.; Furton, K.G.

1995-12-01

In the last decades Gallium Arsenide (GaAs) has been considered the semiconductor that will replace silicon because of its direct band gap and high electron mobility. Problems with GaAs Fermi level pinning has halted its widespread use in the electronics industry. The formation of oxides on GaAs results in a high density of surface states that effectively pin the surface Fermi level at the midgap. Studies on sulfur passivation have eliminated oxidation and virtually unpinned the Fermi level on the GaAs surface. This has given rise to interest in sulfur-GaAs bonds. In this presentation, we will discuss the types ofmore » sulfur bonds extracted from a sulfur passivated GaAs (100) using Supercritical Fluid (CO2) Extraction (SFE). SFE can be a valuable tool in the study of chemical speciations on semiconductor surfaces. The variables evaluated to effectively study the sulfur species from the GaAs surface include passivation techniques, supercritical fluid temperatures, densities, and extraction times.« less

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

PubMed Central

Nitti, Maria Angela; Valentini, Marco; Valentini, Antonio; Ligonzo, Teresa; De Pascali, Giuseppe; Ambrico, Marianna

2014-01-01

Summary In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed. PMID:25383309

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double

Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Davidson, Frederic; Sun, Xiaoli

1989-01-01

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

Outer-sphere interaction of aluminum and gallium solvates with competitive anions in 1,2-propanediol solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrosyants, S.P.; Buslaeva, E.R.

1986-04-01

The interaction of aluminum and gallium solvates with ..pi..-acid ligand in 1,2-propanediol solutions has been investigated. The formation of associates of hexacoordinate aluminum solvates depends on the solvation of the anions in the bulk of the solution or on the faces of the solvento complexes. In the case of gallium the association of the solvates with the anions is determined by two factors: the existence of a configurational equilibrium for the solvento complexes and the preferential solvation of the competitive ..pi..-acid ligands.

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

NASA Technical Reports Server (NTRS)

Picone, S.; Cho, Y.; Asmus, J. R.

1984-01-01

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Graphite based Schottky diodes formed semiconducting substrates

NASA Astrophysics Data System (ADS)

Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

2010-03-01

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

[Evaluation of motor and sensory neuroconduction of the median nerve in patients with carpal tunnel syndrome treated with non-coherent light emitted by gallium arsenic diodes].

PubMed

Viera Alemán, C; Purón, E; Hamilton, M L; Santos Anzorandia, C; Navarro, A; Pineda Ortiz, I

The treatment selection in the carpal tunnel syndrome according to the damage of the median nerve is important and all of these have adverse effects. A good alternative without undesired reactions is irradiation of the carpal tunnel with not coherent light between 920 and 940 nm emitted by gallium arsenide diodes, resembling the physic and therapeutic laser effects. Twenty-six female patients with idiopathic middle carpal tunnel syndrome were irradiated 15 minutes daily during three weeks. The median nerve motor and sensitive neuroconduction was studied before and immediately after the treatment. The abnormal neuroconduction variables (latency, amplitude and velocity conduction) did not modify when treatment concluded, in spite of all the patients reported disappearance of pain and numbness in damaged hands. Not coherent light does not change the fibers functional state explored by conventional neuroconductions techniques. It remains to know if this light produces fine fibers improvement.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

A gallium-arsenide digital phase shifter for clock and control signal distribution in high-speed digital systems

NASA Technical Reports Server (NTRS)

Fouts, Douglas J.

1992-01-01

The design, implementation, testing, and applications of a gallium-arsenide digital phase shifter and fan-out buffer are described. The integrated circuit provides a method for adjusting the phase of high-speed clock and control signals in digital systems, without the need for pruning cables, multiplexing between cables of different lengths, delay lines, or similar techniques. The phase of signals distributed with the described chip can be dynamically adjusted in eight different steps of approximately 60 ps per step. The IC also serves as a fan-out buffer and provides 12 in-phase outputs. The chip is useful for distributing high-speed clock and control signals in synchronous digital systems, especially if components are distributed over a large physical area or if there is a large number of components.

Epitaxial gallium arsenide wafers

NASA Technical Reports Server (NTRS)

Black, J. F.; Robinson, L. B.

1971-01-01

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

Combined Silicon and Gallium Arsenide Solar Cell UV Testing

NASA Technical Reports Server (NTRS)

Willowby, Douglas

2005-01-01

The near and long-term effect of UV on silicon solar cells is relatively understood. In an effort to learn more about the effects of UV radiation on the performance of GaAs/Ge solar cells, silicon and gallium arsenide on germanium (GaAs/Ge) solar cells were placed in a vacuum chamber and irradiated with ultraviolet light by a Spectrolab XT 10 solar simulator. Seventeen GaAs/Ge and 8 silicon solar cells were mounted on an 8 inch copper block. By having all the cells on the same test plate we were able to do direct comparison of silicon and GaAs/Ge solar cell degradation. The test article was attached to a cold plate in the vacuum chamber to maintain the cells at 25 degrees Celsius. A silicon solar cell standard was used to measure beam uniformity and any degradation of the ST-10 beam. The solar cell coverings tested included cells with AR-0213 coverglass, fused silica coverglass, BRR-0213 coverglass and cells without coverglass. Of interest in the test is the BRR-0213 coverglass material manufactured by OCLI. It has an added Infrared rejection coating to help reduce the solar cell operating temperature. This coverglass is relatively new and of interest to several current and future programs at Marshall. Due to moves of the laboratory equipment and location only 350 hours of UV degradation have been completed. During this testing a significant leveling off in the rate of degradation was reached. Data from the test and comparisons of the UV effect of the bare cells and cells with coverglass material will be presented.

Near-infrared photoluminescence biosensing platform with gold nanorods-over-gallium arsenide nanohorn array.

PubMed

Zhang, Yiming; Jiang, Tao; Tang, Longhua

2017-11-15

The near-infrared (NIR) optical detection of biomolecules with high sensitivity and reliability have been expected, however, it is still a challenge. In this work, we present a gold nanorods (AuNRs)-over-gallium arsenide nanohorn-like array (GaAs NHA) system that can be used for the ultrasensitive and specific NIR photoluminescence (PL) detection of DNA and proteins. The fabrication of GaAs NHA involved the technique of colloidal lithography and inductively coupled plasma dry etching, yielding large-area and well-defined nanostructural array, and exhibiting an improved PL emission compared to the planar GaAs substrate. Importantly, we found that the DNA-bridged AuNRs attachment on NHA could further improve the PL intensity from GaAs, and thereby provide the basis for the NIR optical sensing of biological analytes. We demonstrated that DNA and thrombin could be sensitively and specifically detected, with the detection limit of 1 pM for target DNA and 10 pM for thrombin. Such ultrasensitive NIR optical platform can extend to the detection of other biomarkers and is promising for clinical diagnostics. Copyright © 2017 Elsevier B.V. All rights reserved.

Collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors using oxidized aluminum arsenide for current confinement

NASA Astrophysics Data System (ADS)

Massengale, Alan Ross

1998-12-01

The discovery in 1990 that the wet thermal oxidation of AlAs can create a stable native oxide has added a new constituent, AlAs-oxide, to the AlGaAs/GaAs materials system. Native oxides of high Al mole-fraction AlGaAs are being used to confine electrical and/or optical fields in many types of electronic and optoelectronic structures with very promising results. Among these devices are collector-up heterojunction bipolar transistors (HBTs). Collector-up HBTs offer a means to reduce base-collector capacitance relative to their emitter-up counterparts, and thus to improve device performance. A novel method for fabricating collector-up AlGaAs/GaAs HBTs where an AlAs layer is inserted into the emitter layer and is oxidized in water vapor at 450sp°C has been developed. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. Compared to previous methods of fabricating these devices, the process of converting AlAs into an insulator requires only one growth, and does not suffer from implant damage in the base. Because the lateral oxidation of AlAs is a process that proceeds at rates of microns per minute, one of the major challenges facing its implementation is the ability to accurately control the oxidation rate over the wafer, and from one wafer to the next. In the course of work on the oxidation of AlAs, a method to lithographically form lateral oxidation stop layers has been achieved. This technique utilizes impurity induced layer disordering (IILD) in heavily Si-doped buried planes, combined with selective surface patterning and thermal annealing, to create a lateral variation in the Al mole-fraction of the layer to be oxidized.

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

[Optical and spectral parameters in Ce3+ -doped gadolinium gallium aluminum garnet glass-ceramics].

PubMed

Gong, Hua; Zhao, Xin; Yu, Xiao-bo; Setsuhisa, Tanabe; Lin, Hai

2010-01-01

The crystalline phases of Ce3+ -doped gadolinium gallium aluminum garnet (GGAG) glass-ceramics were investigated by X-ray diffraction, and the fluorescence spectra were recorded under the pumping of blue light-emitting diode (LED) using an integrating sphere of 10-inch in diameter, which connected to a CCD detector. The spectral power distribution of the glass-ceramics was obtained from the measured spectra first, and then the quantum yield was derived based on the photon distribution. The quantum yield of Ce3+ emission in GGAG glass-ceramics is 29.2%, meanwhile, the color coordinates and the correlated color temperature (CCT) of combined white light were proved to be x = 0.319, y = 0.349 and 6086 K, respectively. Although the quantum yield is a little smaller than the value in Ce3+ -doped YAG glass-ceramics, the CCT of the combined white light is much smaller than that in the latter. The optical behavior of GGAG glass-ceramics provides new vision for developing comfortable LED lighting devices.

Mesenchymal stromal cell and osteoblast responses to oxidized titanium surfaces pre-treated with λ = 808 nm GaAlAs diode laser or chlorhexidine: in vitro study.

PubMed

Chellini, Flaminia; Giannelli, Marco; Tani, Alessia; Ballerini, Lara; Vallone, Larissa; Nosi, Daniele; Zecchi-Orlandini, Sandra; Sassoli, Chiara

2017-08-01

Preservation of implant biocompatibility following peri-implantitis treatments is a crucial issue in odontostomatological practice, being closely linked to implant re-osseointegration. Our aim was to assess the responses of osteoblast-like Saos2 cells and adult human bone marrow-mesenchymal stromal cells (MSCs) to oxidized titanium surfaces (TiUnite ® , TiU) pre-treated with a 808 ± 10 nm GaAlAs diode laser operating in non-contact mode, in continuous (2 W, 400 J/cm 2 ; CW) or pulsed (20 kHz, 7 μs, 0.44 W, 88 J/cm 2 ; PW) wave, previously demonstrated to have a strong bactericidal effect and proposed as optional treatment for peri-implantitis. The biocompatibility of TiU surfaces pre-treated with chlorhexidine digluconate (CHX) was also evaluated. In particular, in order to mimic the in vivo approach, TiU surfaces were pre-treated with CHX (0.2%, 5 min); CHX and rinse; and CHX, rinse and air drying. In some experiments, the cells were cultured on untreated TiU before being exposed to CHX. Cell viability (MTS assay), proliferation (EdU incorporation assay; Ki67 confocal immunofluorescence analysis), adhesion (morphological analysis of actin cytoskeleton organization), and osteogenic differentiation (osteopontin confocal immunofluorescence analysis; mineralized bone-like nodule formation) analyses were performed. CHX resulted cytotoxic in all experimental conditions. Diode laser irradiation preserved TiU surface biocompatibility. Notably, laser treatment appeared even to improve the known osteoconductive properties of TiU surfaces. Within the limitations of an in vitro experimentation, this study contributes to provide additional experimental basis to support the potential use of 808 ± 10 nm GaAlAs diode laser at the indicated irradiation setting, in the treatment of peri-implantitis and to discourage the use of CHX.

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

NASA Technical Reports Server (NTRS)

Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

1990-01-01

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Gallium--A smart metal

USGS Publications Warehouse

Foley, Nora; Jaskula, Brian W.

2013-01-01

Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

The global anthropogenic gallium system: determinants of demand, supply and efficiency improvements.

PubMed

Løvik, Amund N; Restrepo, Eliette; Müller, Daniel B

2015-05-05

Gallium has been labeled as a critical metal due to rapidly growing consumption, importance for low-carbon technologies such as solid state lighting and photovoltaics, and being produced only as a byproduct of other metals (mainly aluminum). The global system of primary production, manufacturing, use and recycling has not yet been described or quantified in the literature. This prevents predictions of future demand, supply and possibilities for efficiency improvements on a system level. We present a description of the global anthropogenic gallium system and quantify the system using a combination of statistical data and technical parameters. We estimated that gallium was produced from 8 to 21% of alumina plants in 2011. The most important applications of gallium are NdFeB permanent magnets, integrated circuits and GaAs/GaP-based light-emitting diodes, demanding 22-37%, 16-27%, and 11-21% of primary metal production, respectively. GaN-based light-emitting diodes and photovoltaics are less important, both with 2-6%. We estimated that 120-170 tons, corresponding to 40-60% of primary production, ended up in production wastes that were either disposed of or stored. While demand for gallium is expected to rise in the future, our results indicated that it is possible to increase primary production substantially with conventional technology, as well as improve the system-wide material efficiency.

Diode laser-based thermometry using two-line atomic fluorescence of indium and gallium

NASA Astrophysics Data System (ADS)

Borggren, Jesper; Weng, Wubin; Hosseinnia, Ali; Bengtsson, Per-Erik; Aldén, Marcus; Li, Zhongshan

2017-12-01

A robust and relatively compact calibration-free thermometric technique using diode lasers two-line atomic fluorescence (TLAF) for reactive flows at atmospheric pressures is investigated. TLAF temperature measurements were conducted using indium and, for the first time, gallium atoms as temperature markers. The temperature was measured in a multi-jet burner running methane/air flames providing variable temperatures ranging from 1600 to 2000 K. Indium and gallium were found to provide a similar accuracy of 2.7% and precision of 1% over the measured temperature range. The reliability of the TLAF thermometry was further tested by performing simultaneous rotational CARS measurements in the same experiments.

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

PubMed

Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

2013-01-01

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Photomorphogenesis, photosynthesis, and seed yield of wheat plants grown under red light-emitting diodes (LEDs) with and without supplemental blue lighting

NASA Technical Reports Server (NTRS)

Goins, G. D.; Yorio, N. C.; Sanwo, M. M.; Brown, C. S.; Sager, J. C. (Principal Investigator)

1997-01-01

Red light-emitting diodes (LEDs) are a potential light source for growing plants in spaceflight systems because of their safety, small mass and volume, wavelength specificity, and longevity. Despite these attractive features, red LEDs must satisfy requirements for plant photosynthesis and photomorphogenesis for successful growth and seed yield. To determine the influence of gallium aluminium arsenide (GaAlAs) red LEDs on wheat photomorphogenesis, photosynthesis, and seed yield, wheat (Triticum aestivum L., cv. 'USU-Super Dwarf') plants were grown under red LEDs and compared to plants grown under daylight fluorescent (white) lamps and red LEDs supplemented with either 1% or 10% blue light from blue fluorescent (BF) lamps. Compared to white light-grown plants, wheat grown under red LEDs alone demonstrated less main culm development during vegetative growth through preanthesis, while showing a longer flag leaf at 40 DAP and greater main culm length at final harvest (70 DAP). As supplemental BF light was increased with red LEDs, shoot dry matter and net leaf photosynthesis rate increased. At final harvest, wheat grown under red LEDs alone displayed fewer subtillers and a lower seed yield compared to plants grown under white light. Wheat grown under red LEDs+10% BF light had comparable shoot dry matter accumulation and seed yield relative to wheat grown under white light. These results indicate that wheat can complete its life cycle under red LEDs alone, but larger plants and greater amounts of seed are produced in the presence of red LEDs supplemented with a quantity of blue light.

Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

NASA Technical Reports Server (NTRS)

Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.; Brown, M.

1988-01-01

Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

NASA Technical Reports Server (NTRS)

Steiner, B.; Kuriyama, M.; Dobbyn, R. C.; Laor, U.; Larson, D.

1989-01-01

Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

PubMed

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

Continuum modelling of silicon diffusion in indium gallium arsenide

NASA Astrophysics Data System (ADS)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R., E-mail: wrwampl@sandia.gov; Myers, Samuel M.

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers,more » and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.« less

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

PubMed

Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

2015-07-03

Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

EPA Science Inventory

A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

Low-level laser therapy for Peyronie's disease

NASA Astrophysics Data System (ADS)

Johnson, Douglas E.; Bertini, John E. J.; Harris, James M.; Hawkins, Janet H.

1995-05-01

We are reporting the preliminary results of a nonrandomized trial using a low-level gallium- aluminum-arsenide (GaAlAs) laser at a wavelength of 830 nm (Microlight 830, Lasermedics, Inc., Stafford, TX) to treat patients with symptomatic Peyronie's disease. All patients entered into the study had disease consisting of a well-defined fibrous plaque causing pain and/or curvature of the penile shaft on erection that interfered with satisfactory sexual intercourse. Treatment has consisted of 30 mW administered over a duty cycle of 100 seconds (3 J) beginning at the base of the penis and extending to the coronal sulcus over the dorsum of the penis at 0.5 cm intervals. An additional duty cycle of 100 seconds was delivered to each 0.5 cm of palpable plaque. The ability of the therapy to reduce the size of the fibrous plaque, the severity of the penile curvature, and the severity of pain associated with penile erection and the treatment's effect on the patient's quality of life were assessed for each patient at completion of therapy and 6 weeks later.

The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Tong, Xiaodong; Li, Qian; An, Ning; Wang, Wenjie; Deng, Xiaodong; Zhang, Liang; Liu, Haitao; Zeng, Jianping; Li, Zhiqiang; Tang, Hailing; Xiong, Yong-Zhong

2015-11-01

A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Myers, Samuel M.

2014-02-01

A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defectsmore » within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.« less

Gallium arsenide-gallium nitride wafer fusion and the n-aluminum gallium arsenide/p-gallium arsenide/n-gallium nitride double heterojunction bipolar transistor

NASA Astrophysics Data System (ADS)

Estrada, Sarah M.

This dissertation describes the n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor (HBT), the first transistor formed via wafer fusion. The fusion process was developed as a way to combine lattice-mismatched materials for high-performance electronic devices, not obtainable via conventional all-epitaxial formation methods. Despite the many challenges of wafer fusion, successful transistors were demonstrated and improved, via the optimization of material structure and fusion process conditions. Thus, this project demonstrated the integration of disparate device materials, chosen for their optimal electronic properties, unrestricted by the conventional (and very limiting) requirement of lattice-matching. By combining an AlGaAs-GaAs emitter-base with a GaN collector, the HBT benefited from the high breakdown voltage of GaN, and from the high emitter injection efficiency and low base transit time of AlGaAs-GaAs. Because the GaAs-GaN lattice mismatch precluded an all-epitaxial formation of the HBT, the GaAs-GaN heterostructure was formed via fusion. This project began with the development of a fusion process that formed mechanically robust and electrically active GaAs-GaN heterojunctions. During the correlation of device electrical performance with a systematic variation of fusion conditions over a wide range (500--750°C, 0.5--2hours), a mid-range fusion temperature was found to induce optimal HBT electrical performance. Transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) were used to assess possible reasons for the variations observed in device electrical performance. Fusion process conditions were correlated with electrical (I-V), structural (TEM), and chemical (SIMS) analyses of the resulting heterojunctions, in order to investigate the trade-off between increased interfacial disorder (TEM) with low fusion temperature and increased diffusion (SIMS) with high fusion temperature. The best do device results (IC ˜ 2.9 kA/cm2 and beta ˜ 3.5, at VCE = 20V and IB = 10mA) were obtained with an HBT formed via fusion at 600°C for 1 hour, with an optimized base-collector design. This was quite an improvement, as compared to an HBT with a simpler base-collector structure, also fused at 600°C for 1 hour (IC ˜ 0.83 kA/cm2 and beta ˜ 0.89, at VCE = 20V and IB = 10mA). Fused AlGaAs-GaAs-GaAs HBTs were compared to fused AlGaAs-GaAs-GaN HBTs, demonstrating that the use of a wider bandgap collector (Eg,GaN > Eg,GaAs) did indeed improve HBT performance at high applied voltages, as desired for high-power applications.

Microhardness of demineralized enamel following home bleaching and laser-assisted in office bleaching

PubMed Central

Ghanbarzadeh, Majid; Akbari, Majid; Hamzei, Haniye

2015-01-01

Background There is little data regarding the effect of tooth whitening on microhardness of white spot lesions. This study was conducted to investigate the effect of home-bleaching and laser-assisted in-office bleaching on microhardness of demineralized enamel. Material and Methods Forty bovine incisors were selected and immersed in a demineralizing solution for 12 weeks to induce white spot lesions. Enamel blocks were prepared and randomly assigned to two groups of 20 each. The first group underwent home bleaching with 15% carbamide peroxide which was applied for 8 hours a day over a period of 15 days. In the second group, in-office bleaching was performed by 40% hydrogen peroxide and powered by irradiation from an 810 nm gallium-aluminum-arsenide (GaAlAs) diode laser (CW, 2W). This process was performed for 3 sessions every seven days, in 15 days. The specimens were stored in Fusayama Meyer artificial saliva during the experiment. Surface microhardness was assessed before and after the bleaching therapies in both groups. Results Microhardness decreased significantly following both home bleaching and laser-assisted in-office bleaching (p<0.05). There were no significant differences in hardness values among the two groups either before (p=0.131) or after (p=0.182) the bleaching procedures. Conclusions Tooth whitening through home bleaching or laser-assisted in-office bleaching can result in a significant reduction in microhardness of white spot lesions. Therefore, it is suggested to take protective measures on bleached demineralized enamel. Key words:White spot lesion, bleaching, laser, microhardness, demineralized enamel, home bleaching, in-office bleaching. PMID:26330939

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen

2015-08-31

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant ofmore » 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.« less

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Computer modelling of aluminum-gallium arsenide/gallium arsenide multilayer photovoltaics. M.S. Thesis

NASA Technical Reports Server (NTRS)

Wagner, Michael Broderick

1987-01-01

The modeled cascade cells offer an alternative to conventional series cascade designs that require a monolithic intercell ohmic contact. Selective electrodes provide a simple means of fabricating three-terminal devices, which can be configured in complementary pairs to circumvent the attendant losses and fabrication complexities of intercell ohmic contacts. Moreover, selective electrodes allow incorporation of additional layers in the upper subcell which can improve spectral response and increase radiation tolerance. Realistic simulations of such cells operating under one-sun AMO conditions show that the seven-layer structure is optimum from the standpoint of beginning-of-life efficiency and radiation tolerance. Projected efficiencies exceed 26 percent. Under higher concentration factors, it should be possible to achieve efficiencies beyond 30 percent. However, to simulate operation at high concentration will require a model for resistive losses. Overall, these devices appear to be a promising contender for future space applications.

Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

PubMed

Maeda, Y

1994-01-10

Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats.

PubMed

Flora, Swaran J S; Bhatt, Kapil; Mehta, Ashish

2009-10-15

Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

PubMed Central

Chen, Bin; Fu, Xuewen; Tang, Jau; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati; Zewail, Ahmed H.

2017-01-01

Eutectic-related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of a phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here, we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional (4D) electron microscopy. The nondestructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic-related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth, and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control aided by 4D imaging of phase reaction processes on the nanometer-ultrafast time scale opens new venues for engineering various reactions in a wide variety of other systems. PMID:29158393

Strong light extraction enhancement using TiO2 nanoparticles-based microcone arrays embossed on III-Nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Désières, Yohan; Chen, Ding Yuan; Visser, Dennis; Schippers, Casper; Anand, Srinivasan

2018-06-01

Colloidal TiO2 nanoparticles were used for embossing of composite microcone arrays on III-Nitride vertical-thin-film blue light emitting diodes (LEDs) as well as on silicon, glass, gallium arsenide, and gallium nitride surfaces. Ray tracing simulations were performed to optimize the design of microcones for light extraction and to explain the experimental results. An optical power enhancement of ˜2.08 was measured on III-Nitride blue LEDs embossed with a hexagonal array of TiO2 microcones of ˜1.35 μm in height and ˜2.6 μm in base width, without epoxy encapsulation. A voltage increase in ˜70 mV at an operating current density of ˜35 A/cm2 was measured for the embossed LEDs. The TiO2 microcone arrays were embossed on functioning LEDs, using low pressures (˜100 g/cm2) and temperatures ≤100 °C.

Application of Copper Indium Gallium Diselenide Photovoltaic Cells to Extend the Endurance and Capabilities of Unmanned Aerial Vehicles

DTIC Science & Technology

2009-09-01

Group V element to make them n or p material. Another common group of semiconductors are called III–V compounds , such as gallium arsenide (GaAs), or...these compounds used for photovoltaics are Cadmium Telluride (CdTe), and Copper Indium Gallium DiSelenide, commonly referred to as CIGS [49]. Figure...INDIUM GALLIUM DISELENIDE PHOTOVOLTAIC CELLS TO EXTEND THE ENDURANCE AND CAPABILITIES OF UNMANNED AERIAL VEHICLES by William R. Hurd

Note: All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches.

PubMed

Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Fan, Yajun; Liu, Chunliang

2016-08-01

An all solid-state high repetitive sub-nanosecond risetime pulse generator featuring low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switches and a step-type transmission line is presented. The step-type transmission line with two stages is charged to a potential of 5.0 kV also biasing at the switches. The bulk GaAs avalanche semiconductor switch closes within sub-nanosecond range when illuminated with approximately 87 nJ of laser energy at 905 nm in a single pulse. An asymmetric dipolar pulse with peak-to-peak amplitude of 9.6 kV and risetime of 0.65 ns is produced on a resistive load of 50 Ω. A technique that allows for repetition-rate multiplication of pulse trains experimentally demonstrated that the parallel-connected bulk GaAs avalanche semiconductor switches are triggered in sequence. The highest repetition rate is decided by recovery time of the bulk GaAs avalanche semiconductor switch, and the operating result of 100 kHz of the generator is discussed.

Antitumor Activity and Toxicity of Salts of Inorganic Group IIIa Metals: Aluminum, Gallium, Indium, and Thallium

PubMed Central

Hart, Michael M.; Adamson, Richard H.

1971-01-01

The toxicity and antitumor activity of salts of the Group IIIa metals aluminum, gallium, indium, and thallium were determined. With the (lethal dose)50 as a measure, the decreasing order of toxicity was TlCl3 ≥ In(NO3)3 > Ga(NO3)3 > Al(NO3)3. All four metals exhibited antitumor activity, but when the tumor was inoculated by a route different from that of the drug, only Ga+3 and, to a lesser extent, In+3 inhibited tumor growth. Ga(NO3)3 was found to inhibit the growth of three out of four rodent solid tumors. Gallium therefore has potential therapeutic usefulness for treatment of solid tumors in man. PMID:5283954

Molecular oxygen detection using frequency modulation diode laser spectroscopy

NASA Technical Reports Server (NTRS)

Wang, Liang-Guo; Sachse, Glen

1990-01-01

A high-sensitivity spectroscopic measurement of O2 using two-tone frequency modulation spectroscopy with a GaAlAs diode laser is presented. An oxygen sensor based on this technique would be non-intrusive, compact and possess high sensitivity and fast time response.

An Indium Gallium Arsenide Visible/SWIR Focal Plane Array for Low Light Level Imaging

NASA Technical Reports Server (NTRS)

Cohen, Marshall J.; Ettenberg, Martin H.; Lange, Michael J.; Olsen, Gregory H.

1999-01-01

PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells.

PubMed

Eyderman, Sergey; John, Sajeev

2016-06-23

We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm(2) is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10(3) cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

DOE PAGES

Eyderman, Sergey; John, Sajeev

2016-06-23

Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiOmore » 2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm 2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10 3 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.« less

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eyderman, Sergey; John, Sajeev

Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiOmore » 2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm 2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10 3 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.« less

The effects of two different low level laser therapies in the treatment of patients with chronic low back pain: A double-blinded randomized clinical trial.

PubMed

Koldaş Doğan, Şebnem; Ay, Saime; Evcik, Deniz

2017-01-01

The purpose of this study was to compare the effectiveness of two different laser therapy regimens on pain, lumbar range of motions (ROM) and functional capacity in patients with chronic low back pain (CLBP). Forty nine patients with CLBP were randomly assigned into two groups. Group 1 (n= 20) received hot-pack + laser therapy 1 (wavelength of 850 nm Gallium-Aluminum-Arsenide (Ga-Al-As) laser); group 2 (n= 29) received hot-pack + laser therapy 2 (wavelength of 650 nm Helyum-Neon (He-Ne), 785 ve 980 nm Gal-Al-As combined plaque laser) for 15 sessions. Pain severity, patient's and physician's global assessments were evaluated with visual analogue scale (VAS). Modified Schober test, right and left lateral flexion measurements were done. Modified Oswestry Disability Questionnaire (MODQ) was used for evaluation of functional disability. Measurements were done before and after the treatment. After treatment there were statistically significant improvements in pain severity, patient's and physician's global assessment, ROM and MODQ scores in both groups (P< 0.05). After the treatment there were statistically significant differences between the groups in lateral flexion measurements and MODQ scores (P< 0.05) except in pain severity, Modified Schober test, patient's and physician's global assessments (P> 0.05) in favor of those patients who received combined plaque laser therapy (group 2). Laser therapy applied with combined He-Ne and Ga-Al-As provides more improvements in lateral flexion measurements and disability of the patients, however no superiority of the two different laser devices to one another were detected on pain severity.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

Immunotoxicity of gallium arsenide on antigen presentation: comparative study of intratracheal and intraperitoneal exposure routes.

PubMed

Hartmann, Constance B; Harrison, M Travis; McCoy, Kathleen L

2005-01-01

Gallium arsenide (GaAs) is a semiconductor utilized in electronics and computer industries. GaAs exposure of animals causes local inflammation and systemic immune suppression. Mice were administered 2 to 200 mg/kg GaAs. On day 5, intratracheal instillation increased lung weights in a dose-dependent manner and induced pulmonary inflammation exemplified by mononuclear cell infiltration and mild epithelial hyperplasia. No fibrosis, pneumocyte hyperplasia, proteinosis, or bronchial epithelial damage was observed in the lungs. Splenic cellularity and composition were unaffected. GaAs' effect on antigen presentation by macrophages was similar after intratracheal and intraperitoneal exposure, although the lowest observable adverse effect levels differed. Macrophages from the exposure site displayed an enhanced ability to activate an antigen-specific CD4(+) helper T-cell hybridoma compared with vehicle controls, whereas splenic macrophages were defective in this function. The chemical's impact on peritoneal macrophages depended on the exposure route. GaAs exposure augmented thiol cathepsins B and L activities in macrophages from the exposure site, but decreased proteolytic activities in splenic macrophages. Alveolar macrophages had increased expression of major histocompatibility complex (MHC) Class II molecules, whereas MHC Class II expression on splenic and peritoneal macrophages was unaffected. Modified thiol cathepsin activities statistically correlated with altered efficiency of antigen presentation, whereas MHC Class II expression did not. Our study is the first one to examine the functional capability of alveolar macrophages after intratracheal GaAs instillation. Therefore, thiol cathepsins may be potential target molecules by which GaAs exposure modulates antigen presentation.

SOLDERING OF ALUMINUM BASE METALS

DOEpatents

Erickson, G.F.

1958-02-25

This patent deals with the soldering of aluminum to metals of different types, such as copper, brass, and iron. This is accomplished by heating the aluminum metal to be soldered to slightly above 30 deg C, rubbing a small amount of metallic gallium into the part of the surface to be soldered, whereby an aluminum--gallium alloy forms on the surface, and then heating the aluminum piece to the melting point of lead--tin soft solder, applying lead--tin soft solder to this alloyed surface, and combining the aluminum with the other metal to which it is to be soldered.

Thermionic photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Chubb, D. L. (Inventor)

1985-01-01

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

Organic-Inorganic Hybrid Ruddlesden-Popper Perovskites: An Emerging Paradigm for High-Performance Light-Emitting Diodes.

PubMed

Liu, Xiao-Ke; Gao, Feng

2018-05-03

Recently, lead halide perovskite materials have attracted extensive interest, in particular, in the research field of solar cells. These materials are fascinating "soft" materials with semiconducting properties comparable to the best inorganic semiconductors like silicon and gallium arsenide. As one of the most promising perovskite family members, organic-inorganic hybrid Ruddlesden-Popper perovskites (HRPPs) offer rich chemical and structural flexibility for exploring excellent properties for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). In this Perspective, we present an overview of HRPPs on their structural characteristics, synthesis of pure HRPP compounds and thin films, control of their preferential orientations, and investigations of heterogeneous HRPP thin films. Based on these recent advances, future directions and prospects have been proposed. HRPPs are promising to open up a new paradigm for high-performance LEDs.

A Pedagogical Measurement of the Velocity of Light

ERIC Educational Resources Information Center

Tyler, Charles E.

1969-01-01

Describes an inexpensive, easily constructed device for demonstrating that the speed of light is finite, and for measuring its value. The main components are gallium arsenide light emitting diodes, a light pulser, transistors, and an oscilloscope. Detailed instructions of procedure and experimental results are given. (LC)

Optical Studies of the Quantum Confined Stark Effect in ALUMINUM(0.3) GALLIUM(0.7) Arsenide/gallium Arsenide Coupled Double Quantum Wells

NASA Astrophysics Data System (ADS)

Kuroda, Roger Tokuichi

1992-01-01

The development of advanced epitaxical growth techniques such as molecular beam epitaxy has led to growth of high quality III-V layers with monolayer control in thickness. This permits design of new and novel heterointerface based electronic, optical and opto-electronic devices which exploit the new and tailorable electronic states in quantum wells. One such property is the Quantum Confined Stark Effect (QCSE) which, in uncoupled multiple quantum wells (MQW), has been used for the self-electro-optic effect device(SEED). Guided by a phenomenological model of the complex dielectric function for the Coupled Double Quantum Well (CDQW), we show results for the QCSE in CDQW show underlying physics differs from the uncoupled MQW in that symmetry forbidden transitions under flat band conditions become allowed under non-flat band conditions. The transfer of oscillator strength from symmetry allowed to the symmetry forbidden transitions offers potential for application as spatial light modulator (SLM). We show the CDQW lowest exciton peak Stark shifts twice as fast as the SQW with equivalent well width, which offers the SLM device a lower operating voltage than SQW. In addition we show the CDQW absorption band edge can blue shift with increasing electric field, which offers other potential for SLM. From transmission measurements, we verify these predictions and compare them with the phenomenological model. The optical device figure of merit Deltaalpha/alpha of the CDQW is comparable with the "best" SQW, but at lower electric field. From photocurrent measurements, we find that the calculated and measured Stark shifts agree. In addition, we extract a Deltaalpha/ alpha from photocurrent which agree with transmission measurements. From electroreflectance measurements, we calculated the aluminum concentration, and the built in electric field from the Franz-Keldysh oscillations due to the Al_{0.3}Ga _{0.7}As barrier regions in the CDQW. (Copies available exclusively from

Alternative wavelengths for sutureless laser microvascular anastomosis: a preliminary study on acute samples.

PubMed

Bass, L S; Oz, M C; Libutti, S K; Treat, M R

1992-06-01

Attempts to improve the speed and patency of microvascular anastomosis with laser-assisted techniques have provided a modest reduction in operative time and comparable success rates. Using sutureless microvascular anastomoses, 30 end-to-end anastomoses were created in the rat carotid artery using the gallium-aluminum-arsenide diode laser (808 nm). Indocyanine green and fibrinogen were applied to enhance tissue absorption of the laser energy and strengthen the bond created. These were compared with previously reported welds using the THC:YAG laser (2150 nm). Mean welding times were 140 and 288 s, and mean bursting pressures immediately after welding were 515 and 400 mmHg for the diode and THC:YAG laser groups, respectively. Histologically, both lateral and vertical spread of thermal damage was limited. Since both lasers create welds of adequate initial strength without stay sutures and are faster and easier to use than existing systems, evaluation of long-term patency would be worthwhile.

Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.

PubMed

Hao, Guanghui; Liu, Junle; Ke, Senlin

2017-12-10

In order to research spectral response characteristics of transmission-mode nanostructure aluminum gallium nitride (AlGaN) photocathodes, the AlGaN photocathodes materials with varied aluminum (Al) composition were grown by metalorganic chemical vapor deposition (MOCVD) and its optical properties were measured. The Al compositions of each AlGaN film of the photocathodes were analyzed from their adsorption properties curves; their thickness was also calculated by the matrix formula of thin-film optics. The nanostructure AlGaN photocathodes were activated with the Caesium-Oxygen (Cs-O) alternation, and after the photocathode was packaged in vacuum, their spectrum responses were measured. The experimental results showed that the trend of spectrum response curves first increased and then decreased along with the increasing of the incident light wavelength. The peak spectrum response value was 17.5 mA/W at 255 nm, and its quantum efficiency was 8.5%. The lattice defects near the interface of the AlGaN heterostructure could impede the electron motion crossing this region and moving toward the photocathode surface; this was a factor that reduces the electron emission performance of the photocathodes. Also, the experimental result showed that the thickness of each AlGaN layer affected the electron diffusion characteristics; this was a key factor that influenced the spectrum response performance.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

PubMed Central

Mustafa, Farahiyah; Hashim, Abdul Manaf

2014-01-01

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. PMID:24561400

Self-contained sub-millimeter wave rectifying antenna integrated circuit

NASA Technical Reports Server (NTRS)

Siegel, Peter H. (Inventor)

2004-01-01

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

NASA Astrophysics Data System (ADS)

Djemel, A.; Castaing, J.; Chevallier, J.; Henoc, P.

1992-12-01

Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer. La cathodoluminescence (CL) a été utilisée pour étudier l'influence de l'hydrogène sur les propriétés électroniques de GaAs nu et recouvert d'une couche de GaAlAs. Le caractère recombinant des sous-joints de grains a été examiné. Ces défauts étendus ont été introduits par déformation plastique à chaud. Les résultats montrent que l'hydrogène passive ces défauts. La pénétration de l'hydrogène à l'intérieur de GaAs est retardée par la présence de la couche de GaAlAs.

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

NASA Technical Reports Server (NTRS)

Kolawa, Elzbieta; Lowry, Lynn; Herman, Martin; Lee, Karen

1996-01-01

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Electron emitting device and method of making the same

DOEpatents

Olsen, Gregory Hammond; Martinelli, Ramon Ubaldo; Ettenberg, Michael

1977-04-19

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

NASA Technical Reports Server (NTRS)

Suematsu, Y.; Iga, K.

1980-01-01

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

High-Throughput Continuous Hydrothermal Synthesis of Transparent Conducting Aluminum and Gallium Co-doped Zinc Oxides.

PubMed

Howard, Dougal P; Marchand, Peter; McCafferty, Liam; Carmalt, Claire J; Parkin, Ivan P; Darr, Jawwad A

2017-04-10

High-throughput continuous hydrothermal flow synthesis was used to generate a library of aluminum and gallium-codoped zinc oxide nanoparticles of specific atomic ratios. Resistivities of the materials were determined by Hall Effect measurements on heat-treated pressed discs and the results collated into a conductivity-composition map. Optimal resistivities of ∼9 × 10 -3 Ω cm were reproducibly achieved for several samples, for example, codoped ZnO with 2 at% Ga and 1 at% Al. The optimum sample on balance of performance and cost was deemed to be ZnO codoped with 3 at% Al and 1 at% Ga.

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

PubMed Central

2013-01-01

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

Patents and Licenses Through 1994,

DTIC Science & Technology

1994-01-01

Chiang was employed at Honeywell Radiation Center, where she worked on mercury cadmium telluride (HgCdTe) and gallium phosphide photoconductive...5,251,225 Gallium Indium Arsenide Phosphide 4,258,375; 4,372,791; 4,718,070;4,722,092 Gallium Indium Arsenide Phosphide /Indium Phosphide ...Indirect-Gap Semiconductor 3,636,471 Indium Arsenide 2,990,259 Indium Gallium Arsenide 4,746,620 Indium Phosphide 2,990,259; 4,376,285

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

DTIC Science & Technology

2016-09-27

contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various... Contacts 7 2.5 Packaging 11 3. Conclusions 12 4. References 13 Appendix. Detailed Fabrication Process 15 List of Symbols, Abbreviations, and...regions in violet (overlaying previous patterns) .......7 Fig. 6 Mask 4: intrinsic device contact window regions in orange (overlaying previous

P-type gallium nitride

DOEpatents

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

P-type gallium nitride

DOEpatents

Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

1997-01-01

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Isoelectronic Traps in Gallium Phosphide

NASA Astrophysics Data System (ADS)

Christian, Theresa; Alberi, Kirstin; Beaton, Daniel; Fluegel, Brian; Mascarenhas, Angelo

2015-03-01

Isoelectronic substitutional dopants can result in strongly localized exciton traps within a host bandstructure such as gallium arsenide (GaAs) or gallium phosphide (GaP). These traps have received great attention for their role in the anomalous bandgap bowing of nitrogen or bismuth-doped GaAs, creating the dramatic bandgap tunability of these unusual dilute alloys. In the wider, indirect-bandgap host material GaP, these same isoelectronic dopants create bound states within the gap that can have very high radiative efficiency and a wealth of discrete spectral transitions illuminating the symmetry of the localized excitonic trap state. We will present a comparative study of nitrogen and bismuth isoelectronic traps in GaP. Research was supported by the U. S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division under contract DE-AC36-08GO28308 and by the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under contract no. DE-AC05-06OR23100.

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, Hong Q.; Reinhardt, Kitt C.

1999-01-01

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

Satellite Power Systems (SPS) concept definition study, exhibit C. Volume 6: In-depth element investigation

NASA Technical Reports Server (NTRS)

Hanley, G.

1979-01-01

Computer assisted design of a gallium arsenide solid state dc-to-RF converter with supportive fabrication data was investigated. Specific tasks performed include: computer program checkout; amplifier comparisons; computer design analysis of GaSa solar cells; and GaAs diode evaluation. Results obtained in the design and evaluation of transistors for the microwave space power system are presented.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 micrometers

NASA Technical Reports Server (NTRS)

Chorey, Christopher M.; Ferendeci, Altan; Bhasin, Kul B.

1988-01-01

Experimental GaAlAs modulators operating at 0.82 micrometers using a Mach-Zehnder interferometer configuration were designed and fabricated. Coplanar 50 ohm travelling wave microwave electrodes were used to obtain a bandwidth length product of 11.95 GHz-cm. The design, fabrication and dc performance of the GaAlAs travelling wave modulator is presented.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Improved defect analysis of Gallium Arsenide solar cells using image enhancement

NASA Technical Reports Server (NTRS)

Kilmer, Louis C.; Honsberg, Christiana; Barnett, Allen M.; Phillips, James E.

1989-01-01

A new technique has been developed to capture, digitize, and enhance the image of light emission from a forward biased direct bandgap solar cell. Since the forward biased light emission from a direct bandgap solar cell has been shown to display both qualitative and quantitative information about the solar cell's performance and its defects, signal processing techniques can be applied to the light emission images to identify and analyze shunt diodes. Shunt diodes are of particular importance because they have been found to be the type of defect which is likely to cause failure in a GaAs solar cell. The presence of a shunt diode can be detected from the light emission by using a photodetector to measure the quantity of light emitted at various current densities. However, to analyze how the shunt diodes affect the quality of the solar cell the pattern of the light emission must be studied. With the use of image enhancement routines, the light emission can be studied at low light emission levels where shunt diode effects are dominant.

Effect of low-level laser therapy (λ780 nm) on the mechanically damaged dentin-pulp complex in a model of extrusive luxation in rat incisors.

PubMed

de Santana, Dandara Andrade; Fonseca, Gabriela Ferraz; Ramalho, Luciana Maria Pedreira; Rodriguez, Tânia Tavares; Aguiar, Marcio Cajazeira

2017-12-01

In order to regenerate the dental pulp, many strategies have been developed as phototherapy. In the pulp repair, we do not know if gallium-aluminum-arsenide (GaAlAs) laser preserves the primary odontoblasts or stimulates the formation of more dentin matrix when dental pulp is damaged. The aim of the present study was to examine the effect of laser phototherapy (λ780 nm) on vascularization, inflammation, density of the primary odontoblast layer, and formation of reactionary and reparative dentin in the dental pulp by provoking extrusion of the rat incisor. The upper incisors were extruded 3 mm and then repositioned into their original sockets followed by a laser irradiation of the palatal mucosa (λ = 780 nm; p = 70 mW; CW; 4.2 J/cm 2 ; 60 s) every 48 h. Non-traumatized and/or non-irradiated incisors were used as the controls. At 8 and 30 days after surgery, incisors were processed for histological and histomorphometric analysis. Morphological analysis revealed no differences in vascularization between groups, but showed discrete inflammation in some non-irradiated and injured specimens, which correlated with a more irregular reparative dentin. The density of primary odontoblasts in the groups treated with lasers was higher when compared to non-irradiated groups, but no statistically significant difference between groups (p > 0.05). The thickness of the tertiary dentin was increased in both traumatized groups with no statistically significant difference between non-irradiated and irradiated groups (p > 0.05).The present findings revealed that the GaAlAs laser induced small changes on dentin-pulp complex, with more regular dentin matrix in the irradiated dental pulps.

Using gallium as a tracer of aluminum in the Critical Zone: influences on terrestrial cycling from vegetation.

NASA Astrophysics Data System (ADS)

Richardson, J. B.; Derry, L. A.

2016-12-01

Aluminum is a major component of primary and secondary aluminosilicate minerals, stabilizes of soil organic matter, and causes toxicity in plants and organisms. However, tracking the pathways and rates of Al cycling has been limited due to the lack of a suitable tracer because it is monoisotopic. Gallium (Ga) holds promise as an effective pseudo-isotope, geochemical tracer of Al (Shiller and Frilot, 1996, GCA). Gallium shares many physicochemical properties with Al. Both are Group 3A elements, with similar atomic radii, oxidation states, and charge densities. To determine fluxes of Al using the Ga/Al ratio, it is important to identify fractionation during weathering, secondary mineral precipitation, organic matter complexation, and vegetation cycling. To determine the extent of Ga/Al fractionation by vegetation, we measured Ga and Al in plant tissues and soils from three sites in the White Mountains of New Hampshire. Total Ga and Al were measured in late-season leaves and bolewood from Acer saccharum, Fagus grandifolia, and Picea rubens. In addition, we measured strong acid (16 M HNO3 + 12 M HCl) extractable Ga and Al throughout three Spodosol profiles. Gallium ranged between 0.10 - 0.17 nmol g-1 in plant tissues while soils ranged between 1.20 - 45.10 nmol g-1. Aluminum varied between 0.54 - 2.66 μmol g -1 in plant tissues and 7.70 - 263.60 μmol g -1 in their soils. The Ga/Al ratio varied significantly throughout the Critical Zone: late-season leaves (10 ± 1 nmol/ μmol) and bolewood (12 ± 1 nmol/ μmol), and organic horizons (6 ± 1 nmol/ μmol). Typical Ga/Al ratio in igneous and metamorphosed rocks is 0.10 ± 0.02 nmol/ μmol (Shiller and Frilot, 1996, GCA). Our results suggest that vegetation strongly accumulate Ga over Al during biological uplift. This study is one of the first to assess Ga biogeochemistry in the Critical Zone and more are needed, particularly for abiotic processes.

Deep-levels in gallium arsenide for device applications

NASA Astrophysics Data System (ADS)

McManis, Joseph Edward

Defects in semiconductors have been studied for over 40 years as a diagnostic of the quality of crystal growth. In this thesis, we investigate GaAs deep-levels specifically intended for devices. This thesis summarizes our efforts to characterize the near-infrared photoluminescence from deep-levels, study optical transitions via absorption, and fabricate and characterize deep-level light-emitting diodes (LEDs). This thesis also describes the first tunnel diodes which explicitly make use of GaAs deep-levels. Photoluminescence measurements of GaAs deep-levels showed a broad peak around a wavelength extending from 1.0--1.7 mum, which includes important wavelengths for fiber-optic communications (1.3--1.55 mum). Transmission measurements show the new result that very little of the radiative emission is self-absorbed. We measured the deep-level photoluminescence at several temperatures. We are also the first to report the internal quantum efficiency associated with the deep-level transitions. We have fabricated LEDs that, utilize the optical transitions of GaAs deep-levels. The electroluminescence spectra showed a broad peak from 1.0--1.7 mum at low currents, but the spectrum exhibited a blue-shift as the current was increased. To improve device performance, we designed an AlGaAs layer into the structure of the LEDs. The AlGaAs barrier layer acts as a resistive barrier so that the holes in the p-GaAs layer are swept away from underneath the gold p-contact. The AlGaAs layer also reduces the blue-shift by acting as a potential barrier so that only higher-energy holes are injected. We found that the LEDs with AlGaAs were brighter at long wavelengths, which was a significant improvement. Photoluminescence measurements show that the spectral blue-shift is not due to sample heating. We have developed a new physical model to explain the blue-shift: it is caused by Coloumb charging of the deep-centers. We have achieved the first tunnel diodes with which specifically utilize deep

Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

2017-10-01

We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

DTIC Science & Technology

2011-12-01

communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells

Direct determination of gallium on polyurethane foam by X-ray fluorescence.

PubMed

Carvalho, M S; Medeiros, J A; Nóbrega, A W; Mantovano, J L; Rocha, V P

1995-01-01

Gallium chloride is easily extracted from 6M HCl by comminuted polyether-type polyurethane foam. After the extraction step, the gallium absorbed by the PU foam can be quantitatively determined by X-ray fluorescence. A procedure for the direct determination of gallium absorbed by PU foam by XRFS is thus described. Gallium is determined at levels as low as 60 ng/ml (C(L)), with a calibration sensitivity of 424 cps ml/mug, within a linear range 0.1-2.30 mug/ml. The procedure investigated was successfully applied to determination of gallium in aluminum alloys, bauxite and industrial residue samples.

Power scaling of diode-pumped neodymium yttrium aluminum borate laser

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1991-01-01

Preliminary results are presented of the efficient diode-pumped operation of a neodymium yttrium aluminum borate (NYAB) laser at 531.5 nm using two 1-W diode-laser arrays for the pump. With 1380 mW of CW power incident on the crystal, as much as 51 mW of 532.5-nm laser radiation was obtained with the unoptimized cavity. The corresponding optical-to-optical conversion efficiency was 3.7 percent. A plot of the output 531.5 nm vs incident 807 nm pump power is shown. The crystal output power was critically dependent on the rotational and translational adjustment of the NYAB crystal inside the cavity. It is suggested that a crystal cut at the exact phase matching angle, placed in a cavity with proper optimal reflection and transmission mirror coatings, and pumped at proper wavelength can result in higher output power. Thus, the NYAB output power approaches that of a CW intracavity frequency doubled Nd:YAG laser.

Co-Precipitation Synthesis of Gadolinium Aluminum Gallium Oxide (GAGG) via Different Precipitants

NASA Astrophysics Data System (ADS)

Sun, Yan; Yang, Shenghui; Zhang, Ye; Jiang, Jun; Jiang, Haochuan

2014-02-01

In order to obtain a uniform transparent ceramic scintillator, well-dispersed fine starting powders with high-purity, small grain size, spherical morphology and high sinter-ability are necessary. In this study, Ce3+ doped gadolinium aluminum gallium garnet Gd3Al3Ga2O12 (GAGG) powders were synthesized by the co-precipitation method. NH4OH, NH4HCO3 and the mixed solution of NH4OH and NH4HCO3 were used as precipitants, respectively. The precursor composition, phase formation process, microstructure, morphology, particle size distribution and luminescent properties of obtained GAGG powders were measured. The results show that powders prepared using the mixed precipitant exhibit the best microstructural morphology, good sinter-ability and highest luminescent intensity. Pure GAGG polycrystalline powders could be obtained at about 950°C for 1.5 h and the average size of the particles is about 50 nm. The photoluminescence spectrum shows a strong green-yellow emission near 540 nm.

Variable temperature, variable-gap Otto prism coupler for use in a vacuum environment

NASA Astrophysics Data System (ADS)

Cairns, G. F.; O'Prey, S. M.; Dawson, P.

2000-11-01

The field of surface polariton physics really took off with the prism coupling techniques developed by Kretschmann and Raether, and by Otto. This article reports on the construction and operation of a rotatable, in vacuo, variable temperature, Otto coupler with a coupling gap that can be varied by remote control. The specific design attributes of the system offer additional advantages to those of standard Otto systems of (i) temperature variation (ambient to 85 K), and (ii) the use of a valuable, additional reference point, namely the gap-independent reflectance at the Brewster angle at any given, fixed temperature. The instrument is placed firmly in a historical context of developments in the field. The efficacy of the coupler is demonstrated by sample attenuated total reflectance results on films of platinum, niobium, and yttrium barium copper oxide and on aluminum/gallium arsenide (Al/GaAs) Schottky diode structures.

Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode

DTIC Science & Technology

2011-11-15

nanocavity laser with world record low threshold of 208 nW based on a lateral p-i-n junction defined by ion implantation in gallium arsenide6. This...recombination effects are mini- mized. In contrast, at room temperature, thermal excitation of car- riers depopulates the quantum dots much quicker than does Pur

Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.

PubMed

Alam, Khan; Foley, Andrew; Smith, Arthur R

2015-03-11

In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

High-efficiency solar cell and method for fabrication

DOEpatents

Hou, H.Q.; Reinhardt, K.C.

1999-08-31

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Highly transparent cerium doped gadolinium gallium aluminum garnet ceramic prepared with precursors fabricated by ultrasonic enhanced chemical co-precipitation.

PubMed

Zhang, Ji-Yun; Luo, Zhao-Hua; Jiang, Hao-Chuan; Jiang, Jun; Chen, Chun-Hua; Zhang, Jing-Xian; Gui, Zhen-Zhen; Xiao, Na

2017-11-01

Cerium doped gadolinium gallium aluminum garnet (GGAG:Ce) ceramic precursors have been synthesized with an ultrasonic chemical co-precipitation method (UCC) and for comparison with a traditional chemical co-precipitation method (TCC). The effect of ultra-sonication on the morphology of powders and the transmittance of GGAG:Ce ceramics are studied. The results indicate that the UCC method can effectively improve the homogenization and sinterability of GGAG:Ce powders, which contribute to obtain high transparent GGAG ceramic with the highest transmittance of 81%. Copyright © 2017 Elsevier B.V. All rights reserved.

Reliability study of refractory gate gallium arsenide MESFETS

NASA Technical Reports Server (NTRS)

Yin, J. C. W.; Portnoy, W. M.

1981-01-01

Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.

Reliability study of refractory gate gallium arsenide MESFETS

NASA Astrophysics Data System (ADS)

Yin, J. C. W.; Portnoy, W. M.

Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.

A Comparison of Gallium and Indium Alkoxide Complexes as Catalysts for Ring-Opening Polymerization of Lactide.

PubMed

Kremer, Alexandre B; Andrews, Ryan J; Milner, Matthew J; Zhang, Xu R; Ebrahimi, Tannaz; Patrick, Brian O; Diaconescu, Paula L; Mehrkhodavandi, Parisa

2017-02-06

The impact of the metal size and Lewis acidity on the polymerization activity of group 13 metal complexes was studied, and it was shown that, within the same ligand family, indium complexes are far more reactive and selective than their gallium analogues. To this end, gallium and aluminum complexes supported by a tridentate diaminophenolate ligand, as well as gallium complexes supported by N,N'-ethylenebis(salicylimine)(salen) ligands, were synthesized and compared to their indium analogues. Using the tridentate ligand set, it was possible to isolate the gallium chloride complexes 3 and (±)-4 and the aluminum analogues 5 and (±)-6. The alkoxygallium complex (±)-2, supported by a salen ligand, was also prepared and characterized and, along with the three-component system GaCl 3 /BnOH/NEt 3 , was tested for the ring-opening polymerization of lactide and ε-caprolactone. The polymerization rates and selectivities of both systems were significantly lower than those for the indium analogues. The reaction of (±)-2 with 1 equiv of lactide forms the first insertion product, which is stable in solution and can be characterized at room temperature. In order to understand the differences of the reactivity within the group 13 metal complexes, a Lewis acidity study using triethylphosphine oxide (the Gutmann-Beckett method) was undertaken for a series of aluminum, gallium, and indium halide complexes; this study shows that indium halide complexes are less Lewis acidic than their aluminum and gallium analogues. Density functional theory calculations show that the Mulliken charges for the indium complexes are higher than those for the gallium analogues. These data suggest that the impact of ligands on the reactivity is more significant than that of the metal Lewis acidity.

Efficient polymer light-emitting diode with air-stable aluminum cathode

NASA Astrophysics Data System (ADS)

Abbaszadeh, D.; Wetzelaer, G. A. H.; Doumon, N. Y.; Blom, P. W. M.

2016-03-01

The fast degradation of polymer light-emitting diodes (PLEDs) in ambient conditions is primarily due to the oxidation of highly reactive metals, such as barium or calcium, which are used as cathode materials. Here, we report the fabrication of PLEDs using an air-stable partially oxidized aluminum (AlOx) cathode. Usually, the high work function of aluminum (4.2 eV) imposes a high barrier for injecting electrons into the lowest unoccupied molecular orbital (LUMO) of the emissive polymer (2.9 eV below the vacuum level). By partially oxidizing aluminum, its work function is decreased, but not sufficiently low for efficient electron injection. Efficient injection is obtained by inserting an electron transport layer of poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), which has its LUMO at 3.3 eV below vacuum, between the AlOx cathode and the emissive polymer. The intermediate F8BT layer not only serves as a hole-blocking layer but also provides an energetic staircase for electron injection from AlOx into the emissive layer. PLEDs with an AlOx cathode and F8BT interlayer exhibit a doubling of the efficiency as compared to conventional Ba/Al PLEDs, and still operate even after being kept in ambient atmosphere for one month without encapsulation.

Development of ion implanted gallium arsenide transistors

NASA Technical Reports Server (NTRS)

Hunsperger, R.; Baron, R.

1972-01-01

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

NASA Astrophysics Data System (ADS)

Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

2018-02-01

To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

Induced changes in refractive index, optical band gap, and absorption edge of polycarbonate-SiO2 thin films by Vis-IR lasers

NASA Astrophysics Data System (ADS)

Ehsani, Hassan; Akhoondi, Somaieh

2016-09-01

In this experimental work, we have studied induced changes in refractive index, extinction coefficient, and optical band-gap of Bisphenol-A-polycarbonate (BPA-PC) coated with a uniform and thin, anti-scratch SiO2 film irradiated by visible to near-infrared lasers at 532 nm (green),650 nm(red), and 980 nm (IR)wavelength lasers with different energy densities. Our lasers sources are indium-gallium-aluminum-phosphide, second harmonic of neodymium-YAG-solid state lasers and gallium-aluminum-arsenide-semiconductor laser. The energy densities of our sources have been changed by changing the spot size of incident laser. samples transmission spectra were monitored by carry500 spectrophotometer and induced changes in optical properties are evaluated by using, extrapolation of the transmission spectrum through Swanepoel method and computer application

III-V arsenide-nitride semiconductor

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Modeling Heterogeneous Carbon Nanotube Networks for Photovoltaic Applications Using Silvaco Atlas Software

DTIC Science & Technology

2012-06-01

Nanotube MWCNT Multi-Walled Carbon Nanotube PET Polyethylene Terephthalate 4H-SiC 4-H Silicon Carbide AlGaAs Aluminum Gallium Arsenide...nanotubes ( MWCNTs ). SWCNTs are structured with one layer of graphene rolled into a CNT. MWCNTs are contrastingly composed of 23 multiple layers...simulation 19 times to extract cell parameters at #varying widths set cellWidth=200 loop steps=19 go atlas #Constants which are used to set the

Method of forming grooves in the [011] crystalline direction

NASA Technical Reports Server (NTRS)

Marinelli, Donald Paul (Inventor)

1977-01-01

An A-B etchant is applied to a (100) surface of a body of semiconductor material, a portion of which along the (100) surface of the body is either gallium arsenide or gallium aluminum arsenide. The etchant is applied for at least 15 seconds at a temperature of approximately 80.degree. C. The A-B etchant is a solution by weight percent of 47.5%, water, 0.2% silver nitrate, 23.8% chromium trioxide and 28.5% of a 48% aqueous solution of hydrofluoric acid. As a result of the application of the A-B etchant a pattern of elongated etch pits form having their longitudinal axes along the [011] crystalline direction. Grooves are formed in the body at a surface opposite the (100) surface on which was applied the etchant. The grooves are formed along the [011] crystalline direction by aligning the longitudinal axes of the grooves with the longitudinal axes of the etch pits.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

NASA Astrophysics Data System (ADS)

Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

2018-04-01

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

Efficient polymer light-emitting diode with air-stable aluminum cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbaszadeh, D.; Dutch Polymer Institute, P.O. Box 902, 5600 AX Eindhoven; Wetzelaer, G. A. H.

2016-03-07

The fast degradation of polymer light-emitting diodes (PLEDs) in ambient conditions is primarily due to the oxidation of highly reactive metals, such as barium or calcium, which are used as cathode materials. Here, we report the fabrication of PLEDs using an air-stable partially oxidized aluminum (AlO{sub x}) cathode. Usually, the high work function of aluminum (4.2 eV) imposes a high barrier for injecting electrons into the lowest unoccupied molecular orbital (LUMO) of the emissive polymer (2.9 eV below the vacuum level). By partially oxidizing aluminum, its work function is decreased, but not sufficiently low for efficient electron injection. Efficient injection is obtainedmore » by inserting an electron transport layer of poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3] thiadiazol-4,8-diyl)] (F8BT), which has its LUMO at 3.3 eV below vacuum, between the AlO{sub x} cathode and the emissive polymer. The intermediate F8BT layer not only serves as a hole-blocking layer but also provides an energetic staircase for electron injection from AlO{sub x} into the emissive layer. PLEDs with an AlO{sub x} cathode and F8BT interlayer exhibit a doubling of the efficiency as compared to conventional Ba/Al PLEDs, and still operate even after being kept in ambient atmosphere for one month without encapsulation.« less

Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Rabehi, Abdelaziz; Amrani, Mohamed; Benamara, Zineb; Akkal, Boudali; Hatem-Kacha, Arslane; Robert-Goumet, Christine; Monier, Guillaume; Gruzza, Bernard

2015-10-01

This article reports the study of Au/GaN/GaAs Schottky diodes, where the thin GaN film is prepared by nitridation of GaAs substrates with thicknesses of 0.7 and 0.8 nm. The resulting GaN sample with thickness 0.8 nm is then treated with an annealing operation (heating to 620 °C) to improve the current transport. The current-voltage (I-V) and capacitance-voltage (C-V) of the Au/GaN/GaAs structures were investigated at room temperature. In fact, the I-V characteristics show that the annealed sample has low series resistance (Rs) and ideality factor (n) (63 Ω, 2.27 respectively) when compared to the values obtained in the untreated sample (1.83 kΩ, 3.31 respectively). The formation of the GaN layer on the gallium arsenide surface is investigated through calculation of the interface state density NSS with and without the presence of series resistance Rs. The value of the interface state density NSS(E) close to the mid-gap was estimated to be in the order of 4.7×1012 cm-2 eV-1 and 1.02× 1013 cm-2 eV-1 with and without the annealing operation, respectively. However, nitridation with the annealing operation at 620 °C improves the electrical properties of the resultant Schottky diode.

Visible light electroluminescent diodes of indium-gallium phosphide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Aluminum battery alloys

DOEpatents

Thompson, David S.; Scott, Darwin H.

1985-01-01

Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Aluminum battery alloys

DOEpatents

Thompson, D.S.; Scott, D.H.

1984-09-28

Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Large disparity between gallium and antimony self-diffusion in gallium antimonide.

PubMed

Bracht, H; Nicols, S P; Walukiewicz, W; Silveira, J P; Briones, F; Haller, E E

2000-11-02

The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice ('self-') atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formation and migration enthalpies determine the kinetics of this thermally activated process. Self-diffusion studies also contribute to the understanding of the diffusion of impurities, and a quantitative understanding of self- and foreign-atom diffusion in semiconductors is central to the development of advanced electronic devices. In the past few years, self-diffusion studies have been performed successfully with isotopically controlled semiconductor heterostructures of germanium, silicon, gallium arsenide and gallium phosphide. Self-diffusion studies with isotopically controlled GaAs and GaP have been restricted to Ga self-diffusion, as only Ga has two stable isotopes, 69Ga and 71Ga. Here we report self-diffusion studies with an isotopically controlled multilayer structure of crystalline GaSb. Two stable isotopes exist for both Ga and Sb, allowing the simultaneous study of diffusion on both sublattices. Our experiments show that near the melting temperature, Ga diffuses more rapidly than Sb by over three orders of magnitude. This surprisingly large difference in atomic mobility requires a physical explanation going beyond standard diffusion models. Combining our data for Ga and Sb diffusion with related results for foreign-atom diffusion in GaSb (refs 8, 9), we conclude that the unusually slow Sb diffusion in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices, which suppress the defects that are required for Sb diffusion.

Discriminating a deep gallium antisite defect from shallow acceptors in GaAs using supercell calculations

DOE PAGES

Schultz, Peter A.

2016-03-01

For the purposes of making reliable first-principles predictions of defect energies in semiconductors, it is crucial to distinguish between effective-mass-like defects, which cannot be treated accurately with existing supercell methods, and deep defects, for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite defect GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a conceptual framework of level patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as B As. Thismore » systematic approach determines that the gallium antisite supercell results has signatures inconsistent with an effective mass state and cannot be the 78/203 shallow double acceptor. Lastly, the properties of the Ga antisite in GaAs are described, total energy calculations that explicitly map onto asymptotic discrete localized bulk states predict that the Ga antisite is a deep double acceptor and has at least one deep donor state.« less

Magnetoelectric effect in a sandwich structure of gallium arsenide–nickel–tin–nickel

NASA Astrophysics Data System (ADS)

Galichyan, T. A.; Filippov, D. A.; Tihonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

2018-04-01

The results of investigation of the magnetoelectric effect in a nickel-tin-nickel sandwich structure obtained by galvanic deposition of gallium arsenide on a substrate are presented. The technology of constructing such structures is described and the experimental results of the frequency dependence of the effect are presented. It is shown that the use of tin as an intermediate layer reduces the mechanical stresses resulting from the incommensurability of the phases, which permits obtaining qualitative structures with the nickel thickness of about 70 μm. The resulting structures exhibit good adhesion between the layers and have a high quality factor.

Electromagnetic Radiation: Final Range Environmental Assessment, Revision 1

DTIC Science & Technology

2009-12-03

scanning, research, and medical treatment and surgical procedures. There are many different types of lasing materials as identified below ( Indiana ...vapor (red) 0.627 Xenon chloride (Excimer-UV) 0.308 Helium neon (red) 0.633 Xenon fluoride (Excimer-UV) 0.351 Krypton (red) 0.647 Helium cadmium (UV...0.325 Rhodamine 6G dye (tunable) 0.570-0.650 Nitrogen (UV) 0.337 Ruby (CrAlO3) (red) 0.694 Helium cadmium (violet) 0.441 Gallium arsenide (diode

High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

NASA Astrophysics Data System (ADS)

Lin, Yung-Hao; Lee, Ching-Ting

2017-08-01

High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

Diode lasers for direct application by utilizing a trepanning optic for remote oscillation welding of aluminum and copper

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Müller, Norbert; Ferrario, Fabio; Fetissow, Sebastian; Grohe, Andreas; Hagen, Thomas; Steger, Ronny; Katzemaikat, Tristan; Ashkenasi, David; Gries, Wolfgang

2017-02-01

We report the first direct diode laser module integrated with a trepanning optic for remote oscillation welding. The trepanning optic is assembled with a collimated DirectProcess 900 laser engine. This modular laser is based on single emitters and beam combiners to achieve fiber coupled modules with a beam parameter product or BPP < 8 mm mrad at all power levels up to 1 kW, as well as free space collimated outputs with even lower BPP. The initial design consists in vertically stacking several diodes in the fast axis which leads to a rectangular output of about 100 W with BPP of <3.5 mm*mrad in the fast axis and <5 mm*mrad in the slow axis. Next, further power scaling is accomplished by polarization combining and wavelength multiplexing yielding high optical efficiencies of more than 80% and resulting in a building block module with over 500 W launched into a 100 μm fiber with 0.15 NA. The beam profile of the free space module remains rectangular, with a nearly flat top and conserves the beam parameter product of the original vertical stack without the power loss of fiber coupling. The 500 W building blocks feature a highly flexible emitting wavelength bandwidth. New wavelengths can be configured by simply exchanging parts and without modifying the production process. This design principle provides the option to adapt the wavelength configuration to match a broad set of applications, from the UV to the visible and to the far IR depending on the commercial availability of laser diodes. This opens numerous additional applications like laser pumping, scientific and medical applications, as well as materials processing applications such as cutting and welding of copper aluminum or steel. Furthermore, the module's short lead lengths enable very short pulses. Integrated with electronics, the module's pulse width can be adjusted from micro-seconds to cw mode operation by simple software commands. An optical setup can be directly attached instead of a fiber to the laser

Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide.

DTIC Science & Technology

1978-12-01

With the intentional addition of impurity ions (doping) into the lattice of a crystal , the semiconductor gallium arse- nide (GaAs ) should have... lattice structure with respect to Te ion positions and the presence of native defects. The experimental technique of cathodoluminescence is used to...the band—gap are caused by excitons , impurity atoms , or lattice imperfections. The first transition in Figure 1 is the recombination of a free

Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

DTIC Science & Technology

2015-09-01

13. ABSTRACT (maximum 200 words) Gallium nitride/aluminum gallium nitride high electron mobility transistors with nickel/ gold (Ni/Au) and...platinum/ gold (Pt/Au) gating are irradiated with 2 MeV protons. Destructive physical analysis revealed material voids underneath the gate finger of the...nickel/ gold (Ni/Au) and platinum/ gold (Pt/Au) gating are irradiated with 2 MeV protons. Destructive physical analysis revealed material voids underneath

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Transient heat conduction in laser diodes

NASA Astrophysics Data System (ADS)

Enders, P.; Galley, J.

1988-11-01

The dynamics of heat transfer in stripe GaAlAs laser diodes is investigated by solving the linear diffusion equation for a quasitwo-dimensional multilayer structure. The calculations are rationalized drastically by the transfer matrix method and also using for the first time the asymptotes of the decay constants. Special attention is given to the convergence of the Fourier series. A comparison with experimental results reveals however that this is essentially the Stefan problem (with moving boundary conditions).

Satellite power system: Concept development and evaluation program, reference system report

NASA Technical Reports Server (NTRS)

1979-01-01

The Satellite Power System (SPS) Reference System is discussed and the technical and operational information required in support of environmental, socioeconomic, and comparative assessment studies are emphasized. The reference System concept features a gallium-aluminum-arsenide, and silicon solar cell options. Other aspects of an SPS are the construction of bases in space, launch and mission control bases on earth, and fleets of various transportation vehicles to support the construction and maintenance operations of the satellites.

Thermal characterization of gallium nitride p-i-n diodes

NASA Astrophysics Data System (ADS)

Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

2018-02-01

In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

Safety Eye Protection through Use of Fast Acting Optical Switching.

DTIC Science & Technology

1984-01-01

media in which the inhomegeneity is on the order of the wavelength of visible light . At present there are not obvious ideal solutions based simply upon...transitions due to short range diffusion; and (4) inhomogeneous media in which the Inhomegeneity is on the order of the wavelength of visible light At...gallium arsenide diode (850 to 905nm), pulsed ruby (694.3nm), helium-neon (632.8nm) and doubled Nd:YAG (532nm). In the near future iodine (1315nm

a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

NASA Astrophysics Data System (ADS)

Peng, Jianping

The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

NASA Astrophysics Data System (ADS)

Schultz, Peter

To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Particle-Based Simulations of Microscopic Thermal Properties of Confined Systems

DTIC Science & Technology

2014-11-01

velocity versus electric field in gallium arsenide (GaAs) computed with the original CMC table structure (squares) at temperature T=150K, and the new...computer-aided design Cellular Monte Carlo Ensemble Monte Carlo gallium arsenide Heat Transport Equation DARPA Defense Advanced Research Projects

Properties of GaP Schottky barrier diodes at elevated temperatures.

NASA Technical Reports Server (NTRS)

Nannichi, Y.; Pearson, G. L.

1969-01-01

Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

NASA Technical Reports Server (NTRS)

Desalvo, G. C.; Mueller, E. H.; Barnett, A. M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency.

Polarized electron sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prepost, R.

1994-12-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized sourcemore » are presented.« less

Radiation-acoustic treatment of gallium phosphide light diodes

NASA Astrophysics Data System (ADS)

Tartachnik, Volodimir P.; Gontaruk, Olexsandr M.; Vernydub, Roman M.; Kryvutenko, Anatoly M.; Olikh, Yaroslav M.; Opilat, Vitalij Y.; Petrenko, Igor V.; Pinkovska, Myroslava B.

1999-11-01

The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave in different operating modes. Electroluminescence spectra were measured at room and low temperatures, integrated luminosity of devices was checked by solar cell. In order to find out the radiation field influence on non-equilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co60. It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defect,s which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerr, A. J.; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093; Chagarov, E.

2014-09-14

A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge.more » These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)« less

DX centers in indium aluminum arsenide heterostructures

NASA Astrophysics Data System (ADS)

Sari, Huseyin

and the grand canonical ensemble (GCE) the energy levels of the DX centers relative to the conduction band edge were estimated. The optical properties of the DX centers were also investigated using a 1.0 mum thick, Si-doped bulk-like GaAlAs epitaxial layer grown by MBE on a GaAs substrate. A conductivity modulation experiment using a stripe-patterned mask has been performed at 77°K. A conductivity difference, up to 10 4 along parallel and perpendicular directions relative to the stripes, has been measured. The difference in conductivity is a result of the large PPC effect of the DX centers and clearly indicates the localized nature of these deep levels.

Influence of low-level laser therapy on the healing of human bone maxillofacial defects: A systematic review.

PubMed

Santinoni, Carolina Dos Santos; Oliveira, Hiskell Francine Fernandes; Batista, Victor Eduardo de Souza; Lemos, Cleidiel Aparecido Araujo; Verri, Fellippo Ramos

2017-04-01

This systematic review evaluates the effectiveness of low-level laser therapy (LLLT) to enhance maxillofacial area bone repair. A comprehensive search of studies published up to February 2017 and listed in PubMed/MEDLINE, Scopus, and Cochrane Library databases was performed in accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) statement. The 15 selected studies evaluated a total of 374 patients (mean age, 28.5years) who were treated with LLLT. Gallium-arsenide (GaAs) and gallium aluminium arsenide (GaAlAs) were the most commonly used devices, and LLLT parameters varied greatly. Wavelengths varied from 500 to 1000nm. Tooth extraction, distraction osteogenesis, maxillary expansion, periodontal defects, orthodontic movement and maxillary cystic defects were evaluated. From the 15 selected studies, six evaluated bone repair (primary outcomes). Of these, four studies showed improvement in bone formation after using LLLT, two demonstrated improved results for only one follow up period, and one showed no additional benefits. The other 9 studies evaluated secondary parameters related to healing (secondary outcomes) in the maxillofacial area after applying LLLT, including anti-inflammatory, analgesic, and healing accelerator effects, and quality of life related to oral health. There were no adverse or negative effects of LLLT reported. Within the limitation of this review, a possible improvement in bone density can be found when LLLT is applied postoperatively in maxillofacial bony defects. LLLT also seems to promote anti-inflammatory and analgesic effects and accelerate healing, as well as enhance quality of life related to oral health. However, LLLT use protocols need to be standardized before more specific conclusions can be drawn about this subject. Copyright © 2017 Elsevier B.V. All rights reserved.

Desferrioxamine and desferrioxamine-caffeine as carriers of aluminum and gallium to microbes via the Trojan Horse Effect.

PubMed

Huayhuaz, Jesus Antonio Alvarado; Vitorino, Hector Aguilar; Campos, Othon Souto; Serrano, Silvia Helena Pires; Kaneko, Telma Mary; Espósito, Breno Pannia

2017-05-01

Iron acquisition by bacteria and fungi involves in several cases the promiscuous usage of siderophores. Thus, antibiotic resistance from these microorganisms can be circumvented through a strategy of loading toxic metals into siderophores (Trojan Horse Effect). Desferrioxamine (dfo) and its cell-permeant derivative desferrioxamine-caffeine (dfcaf) were complexed with aluminum or gallium for this purpose. The complexes Me(dfo) and Me(dfcaf) (Me=Al 3+ and Ga 3+ ) were synthesized and characterized by mass spectroscopy and cyclic voltammetry. Their relative stabilities were studied through competitive equilibria with fluorescent probes calcein, fluorescein-desferrioxamine and 8-hydroxyquinoline. Me(dfo) and Me(dfcaf) were consistently more toxic than free Me 3+ against Escherichia coli, Pseudomonas aeruginosa, Staphylococcus aureus and Candida albicans, demonstrating the Trojan Horse Effect. Wide spectrum antimicrobial action can be obtained by loading non-essential or toxic metal ions to microbes via a convenient siderophore carrier. Copyright © 2017 Elsevier GmbH. All rights reserved.

Latest progress in gallium-oxide electronic devices

NASA Astrophysics Data System (ADS)

Higashiwaki, Masataka; Wong, Man Hoi; Konishi, Keita; Nakata, Yoshiaki; Lin, Chia-Hung; Kamimura, Takafumi; Ravikiran, Lingaparthi; Sasaki, Kohei; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao

2018-02-01

Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.

Effects of the GaAlAs diode laser (780 nm) on the periodontal tissues during orthodontic tooth movement in diabetes rats: histomorphological and immunohistochemical analysis.

PubMed

Gomes, Mônica Fernandes; da Graças Vilela Goulart, Maria; Giannasi, Lilian Chrystiane; Hiraoka, Cybelle Mori; de Fátima Santana Melo, Gabriela; de Sousa, Aretha Graziela Vilela; Nóbrega, Celestino José Prudente; Zangaro, Renato Amaro; Salgado, Miguel Angel Castillo

2017-09-01

The purposes of the present study are to assess the effects of the GaAlAs diode laser on the periodontal tissues and to investigate its action on the alveolar bone remodeling process during orthodontic tooth movement in normoglycemic and diabetic rats. Sixty adult male Wistar rats were divided into four groups of 15 rats: normoglycemic (N), diabetic (D), laser-normoglycemic (LN), and laser-diabetic (LD) rats. Diabetes mellitus was induced by a single intravenous injection of 40 mg/kg monohydrated alloxan. The orthodontically moved tooth underwent a force magnitude of 20 cN. The laser irradiation with a continuous emission of a 780-nm wavelength, an output power of 20 mW, and a fiber probe with a spot size of 0.04 cm in diameter and an area of 0.00126 cm 2 were used. Moreover, an energy density of 640 J/cm 2 was applied in an exposition time of 40 s. Histomorphological and immunohistochemical analysis was performed. The photobiomodulation (PBM) strongly stimulated the periodontal tissue response, establishing mainly the balance between the bone formation and resorption. Intense inflammatory cell infiltration and extensive loss of bone tissue were mainly found in the D group from 14 days. The number of osteopontin-positive osteocytes was significantly greater in the LN group, followed by the LD, especially at 7 and 14 days, whereas osteoprotegerin-positive osteoblasts were significantly higher in the LN and LD groups than in the N and D groups, respectively, in all periods. The PBM strongly stimulated the alveolar bone remodeling and favored the continuous reorganization of the soft periodontal tissues, leading to the maintenance and integrity of the periodontal microstructure under orthodontic force, especially in uncontrolled diabetic rats.

AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bockowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-02-01

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Effect of diode laser in the treatment of patients with nonspecific chronic low back pain: a randomized controlled trial.

PubMed

Vallone, Francesco; Benedicenti, Stefano; Sorrenti, Eugenio; Schiavetti, Irene; Angiero, Francesca

2014-09-01

Low back pain is a common, highly debilitating condition, whose severity is variable. This study evaluated the efficacy of treatment with Ga-Al-As diode laser (980 nm) with a large diameter spot (32 cm(2)), in association with exercise therapy, in reducing pain. The present study aimed to evaluate the pain reduction efficacy of treatment with the Ga-Al-As diode laser (980 nm) in combination with exercise therapy, in patients with chronic low back pain (CLBP). This study evaluated 100 patients with CLBP (mean age 60 years) who were randomly assigned to two groups. The laser plus exercises group (Laser+EX: 50 patients) received low-level laser therapy (LLLT) with a diode laser, 980 nm, with a specific handpiece [32 cm(2) irradiation spot size, power 20 W in continuous wave (CW), fluence 37.5J/cm(2), total energy per point 1200 J] thrice weekly, and followed a daily exercise schedule for 3 weeks (5 days/week). The exercises group (EX: 50 patients) received placebo laser therapy plus daily exercises. The outcome was evaluated on the visual analogue pain scale (VAS), before and after treatment. At the end of the 3 week period, the Laser+EX group showed a significantly greater decrease in pain than did the EX group. There was a significant difference between the two groups, with average Δ VAS scores of 3.96 (Laser+EX group) and 2.23 (EX group). The Student's t test demonstrated a statistically significant difference between the two groups, at p<0.001. This study demonstrated that the use of diode laser (980 nm) with large diameter spot size, in association with exercise therapy, appears to be effective. Such treatment might be considered a valid therapeutic option within rehabilitation programs for nonspecific CLBP.

High final energy of gallium arsenide laser increases MyoD gene expression during the intermediate phase of muscle regeneration after cryoinjury in rats.

PubMed

Santos, Caroline Pereira; Aguiar, Andreo Fernando; Giometti, Ines Cristina; Mariano, Thaoan Bruno; de Freitas, Carlos Eduardo Assumpção; Nai, Gisele Alborghetti; de Freitas, Selma Zambelli; Pai-Silva, Maeli Dal; Pacagnelli, Francis Lopes

2018-05-01

The aim of this study was to determine the effects of gallium arsenide (GaAs) laser on IGF-I, MyoD, MAFbx, and TNF-α gene expression during the intermediate phase of muscle regeneration after cryoinjury 21 Wistar rats were divided into three groups (n = 7 per group): untreated with no injury (control group), cryoinjury without GaAs (injured group), and cryoinjury with GaAs (GaAs-injured group). The cryoinjury was induced in the central region of the tibialis anterior muscle (TA). The region injured was irradiated once a day during 14 days using GaAs laser (904 nm; spot size 0.035 cm 2 , output power 50 mW; energy density 69 J cm -2 ; exposure time 4 s per point; final energy 4.8 J). Twenty-four hours after the last application, the right and left TA muscles were collected for histological (collagen content) and molecular (gene expression of IGF-I, MyoD, MAFbx, and TNF-α) analyses, respectively. Data were analyzed using one-way ANOVA at P < 0.05. There were no significant (P > 0.05) differences in collagen density and IGF-I gene expression in all experimental groups. There were similar (P < 0.05) decreases in MAFbx and TNF-α gene expression in the injured and GaAs-injured groups, compared to control group. The MyoD gene expression increased (P = 0.008) in the GaAs-injured group, but not in the injured group (P = 0.338), compared to control group. GaAs laser therapy had a positive effect on MyoD gene expression, but not IGF-I, MAFbx, and TNF-α, during intermediary phases (14 days post-injury) of muscle repair.

Etching and Growth of GaAs

NASA Technical Reports Server (NTRS)

Seabaugh, A. C.; Mattauch, R., J.

1983-01-01

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

NASA Astrophysics Data System (ADS)

Bahk, Je-Hyeong

Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

The influence of electrolyte additives on the anodic dissolution of aluminum in alkaline solutions

NASA Astrophysics Data System (ADS)

Boehnstedt, W.

1980-09-01

The paper describes the effect of electrolyte additives on the anodic dissolution of aluminum in alkaline solutions. The dissolution is accelerated by the addition of small quantities of gallium or indium ions to the electrolyte indicated by the shift of the zero current potential by about 250 mV on the current-potential curve. Scanning electron microscope studies showed that gallium ions produce many small cracks in the aluminum electrode and collect at the grain boundary areas, increasing the electrode surface; this enlargement, in combination with increased electrolyte agitation due to greater hydrogen evolution, provides higher current densities at the same potential. It is concluded that this process will widen the possibilities of using aluminum and its alloys in high-rate batteries.

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

PubMed Central

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-01-01

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

PubMed

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-04-04

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap

NASA Technical Reports Server (NTRS)

Mathur, G.; Wheaton, M. L.; Borrego, J. M.; Ghandhi, S. K.

1985-01-01

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Wafer-Fused Orientation-Patterned GaAs

DTIC Science & Technology

2008-02-13

frequencies utilizing existing industrial foundries. 15. SUBJECT TERMS Orientation-patterned Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase... Gallium Arsenide, hydride vapor phase epitaxy, quasi-phase-matching, nonlinear frequency conversion 1. INTRODUCTION Quasi-phase-matching (QPM)1...and E. Lallier, “Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

PubMed

Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

2016-04-01

Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology. Copyright © 2016 Elsevier Ltd. All rights reserved.

Methods for forming group III-arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2002-01-01

Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Low intensity laser therapy: the clinical approach

NASA Astrophysics Data System (ADS)

Kahn, Fred

2006-02-01

Recently, there has been significant improvement in the process of research and application of Low Intensity Laser Therapy (LILT). Despite this positive direction, a wide discrepancy between the research component and clinical understanding of the technology remains. In our efforts to achieve better clinical results and more fully comprehend the mechanisms of interaction between light and cells, further studies are required. The clinical results presented in this paper are extrapolated from a wide range of musculoskeletal problems including degenerative osteoarthritis, repetitive motion injuries, sports injuries, etc. The paper includes three separate clinical studies comprising 151, 286 and 576 consecutive patient discharges at our clinic. Each patient studied received a specific course of treatment that was designed for that individual and was modified on a continuing basis as the healing process advanced. On each visit, clinical status correlation with the duration, dosage and other parameters was carried out. The essentials of the treatment consisted of a three stage approach. This involved a photon stream emanating from a number of specified gallium-aluminum-arsenide diodes; stage one, red light array, stage two consisting of an array of infrared diodes and stage three consisting of the application of an infrared laser diode probe. On average, each of these groups required less than 10 treatments per patient and resulted in a significant improvement / cure rate greater than 90% in all conditions treated. This report clearly demonstrates the benefits of LILT, indicating that it should be more widely adapted in all medical therapeutic settings.

The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

NASA Technical Reports Server (NTRS)

Gertner, E. R.

1980-01-01

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Temporal switching jitter in photoconductive switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

GAUDET,JOHN A.; SKIPPER,MICHAEL C.; ABDALLA,MICHAEL D.

This paper reports on a recent comparison made between the Air Force Research Laboratory (AFRL) gallium arsenide, optically-triggered switch test configuration and the Sandia National Laboratories (SNL) gallium arsenide, optically-triggered switch test configuration. The purpose of these measurements was to compare the temporal switch jitter times. It is found that the optical trigger laser characteristics are dominant in determining the PCSS jitter.

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

NASA Technical Reports Server (NTRS)

Tombrello, Thomas A. (Inventor); Qiu, Yuanxun (Inventor); Mendenhall, Marcus H. (Inventor)

1985-01-01

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Study of multi-kW solar arrays for Earth orbit application

NASA Technical Reports Server (NTRS)

1980-01-01

Planar and concentrator solar array configurations based on silicon and gallium arsenide solar cells were conceptualized and on-orbit maintainability was addressed. Four basic categories emerged: (1) planar (non concentrated) with silicon cells, (2) low-CR (concentration ratio = 3.4) with silicon cells, (3) low-CR with GaAs, and (4) high-CR (concentration ratio = 62.5) with GaAs. A very high-CR (concentration ratio = 200) was investigated but rejected on thermal grounds. Nonrecurring and recurring cost elements for each of the four concepts selected were compared over a 15 year life cycle. Under conditions where the gallium arsenide cells can be produced for less than $25 per 2 x 2 cm, the low CR concentrator emerges as the most cost effective configuration. However, the producibility risk remains higher on the gallium arsenide cell.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

PubMed Central

2013-01-01

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

Femtosecond Nonlinearities in Indium Gallium Arsenic Phosphide Diode Lasers

NASA Astrophysics Data System (ADS)

Hall, Katherine Lavin

Semiconductor optical amplifiers are receiving increasing attention for possible applications to broadband optical communication and switching systems. In this thesis we report the results of an extensive experimental study of the ultrafast gain and refractive index nonlinearities in 1.5 μm InGaAsP laser diode amplifiers. The temporal resolution afforded by the femtosecond optical pulses used in these experiments allows us to study carrier interactions with other carriers as well as carrier interactions with the lattice. The 100-200 fs optical pulses used in the pump -probe experiments are generated by an Additive Pulse Modelocked color center laser. The measured group velocity dispersion in the diodes ranged from -0.6 to -0.95 mu m^{-1 }. Differences in the group velocity for TE - and TM-polarized pulses suggested that cross-polarized pump-probe pulses walk off from each other in the diode. This walk-off can diminish the time resolution of some experiments. A novel heterodyne pump-probe technique was developed to distinguish collinear, copolarized, pump and probe pulses that were nominally at the same wavelength. Comparing cross-polarized and copolarized pump-probe results yielded new information about the physical mechanisms responsible for nonlinear gain in the diodes. We observed a gain compression across the entire bandwidth of the diode, associated with carrier heating. The hot carrier distribution cooled back to the lattice temperature with a 0.6 to 1.0 ps time constant, depending on the device structure. In addition, we observed a 0.1 to 0.25 ps delay in onset of carrier heating. Large gain compression due to two photon absorption was also observed. A small portion of the nonlinear gain is attributed to spectral hole burning. Pulsewidth-dependent output saturation energies were explained by a rate equation model that included the effect of carrier heating. Measurements of pump-induced probe phase changes revealed index nonlinearities due to delayed carrier

An interim report on the NTS-2 solar cell experiment

NASA Technical Reports Server (NTRS)

Statler, R. L.; Walker, D. H.

1979-01-01

Data obtained from the fourteen solar cell modules on the NTS-2 satellite are presented together with a record of panel temperature and sun inclination. The following flight data are discussed: (1) state of the art solar cell configurations which embody improvements in solar cell efficiency through new silicon surface and bulk technology, (2) improved coverslip materials and coverslip bonding techniques, (3) short and long term effects of ultraviolet rejection filters vs. no filters on the cells, (4) degradation on a developmental type of liquid epitaxy gallium-aluminum-arsenide solar cell, and (5) space radiation effects.

Methods for forming group III-V arsenide-nitride semiconductor materials

NASA Technical Reports Server (NTRS)

Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

2000-01-01

Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

Space-based solar power conversion and delivery systems study. Volume 4: Energy conversion systems studies

NASA Technical Reports Server (NTRS)

1977-01-01

Solar cells and optical configurations for the SSPS were examined. In this task, three specific solar cell materials were examined: single crystal silicon, single crystal gallium arsenide, and polycrystalline cadmium sulfide. The comparison of the three different cells on the basis of a subsystem parametric cost per kW of SSPS-generated power at the terrestrial utility interface showed that gallium arsenide was the most promising solar cell material at high concentration ratios. The most promising solar cell material with no concentration, was dependent upon the particular combination of parameters representing cost, mass and performance that were chosen to represent each cell in this deterministic comparative analysis. The potential for mass production, based on the projections of the present state-of-the-art would tend to favor cadmium sulfide in lieu of single crystal silicon or gallium arsenide solar cells.

Prompt Charge Collection in Gallium Arsenide Diodes Struck by Energetic Heavy Ions.

DTIC Science & Technology

1986-09-01

Continue on reverse if necessaty and identify by block number) Charge collection was measured as a function of reversebias voltage on GaAs Schottkyarrier...research described above was all directed at SEU in silicon, the semiconductor material from which state-of-the- art electronic switching de- vices are...of the industry dedicated to satellite electronics. There, data processing re- quirements have traditionally pushed the state of the art , both in

Electro-optical characterization of GaAs solar cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.; Dunham, Glen; Addis, F. W.; Huber, Dan; Daling, Dave

1987-01-01

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Probing/Manipulating the Interfacial Atomic Bonding between High k Dielectrics and InGaAs for Ultimate CMOS

DTIC Science & Technology

2015-04-24

region of n-In0.53Ga0.47As MOSCAP. 15. SUBJECT TERMS CMOS, Magneto-optical imaging , Nanotechnology, Indium Gallium Arsenide 16...Nanotechnology, Indium Gallium Arsenide 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT Same as Report (SAR) 18. NUMBER OF PAGES 11 19a...more accessible to water vapor than it is in the complete TEMAHf molecule. There it is surrounded by 8 aliphatic methyl and ethyl groups with a total of

Gallium scan

MedlinePlus

... material called gallium and is a type of nuclear medicine exam. A related test is gallium scan ... Brown ML, Forstrom LA, et al. Society of nuclear medicine procedure guideline for gallium scintigraphy in inflammation. ...

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

NASA Technical Reports Server (NTRS)

Bar-Chaim, N.; Harder, CH.; Margalit, S.; Yariv, A.; Katz, J.; Ury, I.

1982-01-01

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism.

PubMed

Puri, Neerja

2015-01-01

Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum - garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser.

Challenges for critical raw material recovery from WEEE - The case study of gallium.

PubMed

Ueberschaar, Maximilian; Otto, Sarah Julie; Rotter, Vera Susanne

2017-02-01

Gallium and gallium compounds are more frequently used in future oriented technologies such as photovoltaics, light diodes and semiconductor technology. In the long term the supply risk is estimated to be critical. Germany is one of the major primary gallium producer, recycler of gallium from new scrap and GaAs wafer producer. Therefore, new concepts for a resource saving handling of gallium and appropriate recycling strategies have to be designed. This study focus on options for a possible recycling of gallium from waste electric and electronic equipment. To identify first starting points, a substance flow analysis was carried out for gallium applied in integrated circuits applied on printed circuit boards and for LEDs used for background lighting in Germany in 2012. Moreover, integrated circuits (radio amplifier chips) were investigated in detail to deduce first approaches for a recycling of such components. An analysis of recycling barriers was carried out in order to investigate general opportunities and risks for the recycling of gallium from chips and LEDs. Results show, that significant gallium losses arose in primary production and in waste management. 93±11%, equivalent to 43,000±4700kg of the total gallium potential was lost over the whole primary production process until applied in electronic goods. The largest share of 14,000±2300kggallium was lost in the production process of primary raw materials. The subsequent refining process was related to additional 6900±3700kg and the chip and wafer production to 21,700±3200kg lost gallium. Results for the waste management revealed only low collection rates for related end-of-life devices. Not collected devices held 300 ± 200 kg gallium. Due to the fact, that current waste management processes do not recover gallium, further 80 ± 10 kg gallium were lost. A thermal pre-treatment of the chips, followed by a manual separation allowed an isolation of gallium rich fractions, with gallium mass fractions up to

Proton irradiation effects on gallium nitride-based devices

NASA Astrophysics Data System (ADS)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M.; Meng, X.

2016-03-28

Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smallermore » than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.« less

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

The effect of He-Ne and Ga-Al-As lasers on the healing of oral mucosa in diabetic mice.

PubMed

Fahimipour, Farahnaz; Houshmand, Behzad; Alemi, Parvin; Asnaashari, Mohammad; Tafti, Mahmoud Akhavan; Akhoundikharanagh, Fatemeh; Farashah, Seyed Emadeddin Najafi; Aminisharifabad, Mohammad; Korani, Aghdas Setoudehnia; Mahdian, Mina; Bastami, Farshid; Tahriri, Mohammadreza

2016-06-01

Delayed wound healing is one of the complications of diabetes mellitus. Low-level laser therapy (LLLT) has been used to accelerate wound healing however the effect of LLLT on the hard palate wound healing in streptozotocin-induced diabetic (STZ-D) mice has not yet been characterized. This study aims to determine the effect of LLLT (He-Ne and Ga-Al-As laser) on the process of wound healing in the hard palate among diabetic and non-diabetic mice. 90 adult male mice were divided into six groups. Type 1 diabetes mellitus was induced in three groups by means of injection of STZ. Of these, one group was irradiated with He-Ne laser (DH group), one with Ga-Al-As laser (DG group) and one did not undergo any LLLT (DC group). The remaining groups were non-diabetic which were allotted to laser therapy with He-Ne laser (NH group) or with Ga-Al-As laser (NG group) or no LLLT (NC group). Five animals from each group were killed on the third, seventh, and fourteenth days after surgery, and biopsies were made for histological analysis. On the 3rd and 7th days after the surgery, the number of polymorphonuclear (PMN) cells in NH, DH, NG, and DG groups was significantly lower than that of the control groups. On the 3rd, 7th and 14th days, the fibroblasts and new blood vessel counts and collagen fibers in diabetic laser treated groups (DG and DH) were significantly higher compared to that of NC, DC, NH and NG groups. On the 7th and 14th days, the fibroblasts and new blood vessel counts and collagen fibers in NH, DH, NG, and DG groups were also significantly higher than that of the control groups, and the fibroblast and new blood vessel counts and collagen density fibers in NH and DH groups were higher than that of the NG and DG groups. LLLT with He-Ne laser compared to Ga-Al-As laser has a positive healing effect on hard palate gingival wounds in STZ-D mice. Copyright © 2016 Elsevier B.V. All rights reserved.

High-surface Thermally Stable Mesoporous Gallium Phosphates Constituted by Nanoparticles as Primary Building Blocks

DOE Office of Scientific and Technical Information (OSTI.GOV)

V Parvulescu; V Parvulescu; D Ciuparu

In constant, search for micro/mesoporous materials, gallium phosphates, have attracted continued interest due to the large pore size reported for some of these solids in comparison with analogous aluminum phosphates. However up to now, the porosity of gallium phosphates collapsed upon template removal or exposure to the ambient moisture. In the present work, we describe high-surface thermally stable mesoporous gallium phosphates synthesized from gallium propoxide and PCl{sub 3} and different templating agents such as amines (dipropylamine, piperidine and aminopiperidine) and quaternary ammonium salts (C{sub 16}H{sub 33}(CH{sub 3})3NBr and C{sub 16}PyCl). These highly reactive precursors have so far not been usedmore » as gallium and phosphate sources for the synthesis of gallophosphates. Conceptually, our present synthetic procedure is based on the fast formation of gallium phosphate nanoparticles via the reaction of gallium propoxide with PCl{sub 3} and subsequent construction of the porous material with nanoparticles as building blocks. The organization of the gallophosphate nanoparticles in stable porous structures is effected by the templates. Different experimental procedures varying the molar composition of the sol-gel, pH and the pretreatment of gallium precursor were assayed, most of them leading to satisfactory materials in terms of thermal stability and porosity. In this way, a series of gallium phosphates with surface are above 200 m{sup 2} g{sup -1}, and narrow pore size from 3 to 6 nm and remarkable thermal stability (up to 550 C) have been prepared. In some cases, the structure tends to show some periodicity and regularity as determined by XRD. The remarkable stability has allowed us to test the catalytic activity of gallophosphates for the aerobic oxidation of alkylaromatics with notable good results. Our report reopens the interest for gallophosphates in heterogeneous catalysis.« less

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

PubMed

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

Cr-Si Schottky nano-diodes utilizing anodic aluminum oxide templates.

PubMed

Kwon, Namyong; Kim, Kyohyeok; Heo, Jinhee; Chung, Ilsub

2014-04-01

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. The diameters of the diodes were 75.0, 57.6, and 35.8 nm. Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters due to an enhanced tunnel current contribution, which is attributed to a reduction in the barrier thickness. The diameters of Cr nanodots smaller than the Debye length (156 nm) play an important role in the reduction of barrier thickness. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

Gallium Arsenide welded panel technology for advanced spaceflight applications

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Gillanders, M. S.; Garlick, G. F. J.; Cavicchi, B. T.; Glenn, G. S.; Tobin, S. P.

1989-01-01

A significant impediment to the widespread use of GaAs solar cells in space is the cost and weight of the GaAs substrate. In order to overcome these problems, Spectrolab is pursuing thin cell technologies encompassing both liquid phase epitaxy (LPE) GaAs on GaAs and MOCVD GaAs on Ge cells. Spectrolab's experience in the manufacture of 4 to 6 mil 2 cm x 4 cm GaAs cells on a LPE production line is discussed. By thinning the cells at a late state of processing, production yields comparable to 12 mil cells have been achieved. Data are presented showing that GaAs cells can be welded without degradation and have achieved minimum average efficiencies of 18 percent AM0, 28 C with efficiencies up to 20 percent. Spectrolab, in conjunction with Spire Corporation has also been pursuing GaAs on Ge cell technology in support of larger area lighter weight power systems. Data are presented showing that individual 2 cm x 2 cm, 8 mil cell efficiencies up to 21.7 percent have been achieved. Efficiencies up to 24 percent AM0 will be possible by optimizing the GaAs/Ge interface. Cells have been welded without degradation using silver interconnects and have been laid down on an aluminum honeycomb/graphite facesheet substrate to produce a small coupon. The efficiency was 18.1 percent at AM0, 28 C.

Influence of postoperative low-level laser therapy on the osseointegration of self-tapping implants in the posterior maxilla: a 6-week split-mouth clinical study.

PubMed

Mandić, Borka; Lazić, Zoran; Marković, Aleksa; Mandić, Bojan; Mandić, Miška; Djinić, Ana; Miličić, Biljana

2015-03-01

Low-level laser therapy (LLLT) has been proven to stimulate bone repair, affecting cellular proliferation, differentiation and adhesion, and has shown a potential to reduce the healing time following implant placement. The aim of this clinical study was to investigate the influence of postoperative LLLT osseointegration and early success of self-tapping implants placed into low-density bone. Following the split-mouth design, self-tapping implants n = 44) were inserted in the posterior maxilla of 12 patients. One jaw side randomly received LLLT (test group), while the other side was placebo (control group). For LLLT, a 637 nm gallium-aluminum-arsenide (GaAlAs) laser (Medicolaser 637, Technoline, Belgrade, Serbia) with an output power of 40 mW and continuous wave was used. Low-level laser treatment was performed immediately after the surgery and then repeated every day in the following 7 days. The total irradiation dose per treatment was 6.26 J/cm2 per implant. The study outcomes were: implant stability, alkaline-phosphatase (ALP) activity and early implant success rate. The follow-up took 6 weeks. Irradiated implants achieved a higher stability compared with controls during the entire follow-up and the difference reached significance in the 5th postoperative week (paired t-test, p = 0.030). The difference in ALP activity between the groups was insignificant in any observation point (paired t-test, p > 0.05). The early implant success rate was 100%, regardless of LLLT usage. LLLT applied daily during the first postoperative week expressed no significant influence on the osseointegration of self-tapping implants placed into low density bone of the posterior maxilla. Placement of self-tapping macro-designed implants into low density bone could be a predictable therapeutic procedure with a high early success rate regardless of LLLT usage.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism

PubMed Central

Puri, Neerja

2015-01-01

Introduction: Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. Aims: To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum — garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Materials and Methods: Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. Results: It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. Conclusions: To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser. PMID:26157309

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Structural investigation of the C-O complex in GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alt, H. Ch.; Kersch, A.; Wagner, H. E.

A carbon-oxygen complex occurring in gallium arsenide crystals after annealing at around 700 °C is studied. Fourier transform infrared absorption measurements on the associated vibrational band at 2060 cm-1 under uniaxial stress reveal that the center has tetragonal symmetry. From the intensity of the {sup 18}O-related satellite band it is concluded that four oxygen atoms are involved. Ab initio local density calculations show that a tetragonal CO{sub 4} molecule forms a stable entity in the gallium arsenide lattice.

Clusterization Effects in III-V Nitrides: Nitrogen Vacancies, and Si and Mg Impurities in Aluminum Nitride and Gallium Nitride

NASA Astrophysics Data System (ADS)

Gubanov, V. A.; Pentaleri, E. A.; Boekema, C.; Fong, C. Y.; Klein, B. M.

1997-03-01

We have investigated clusterization of nitrogen vacancies and Si and Mg doping impurities in zinc-blende aluminum nitride (c-AlN) and gallium nitride (c-GaN) by the tight-binding LMTO technique. The calculations used 128-site supercells. Si and Mg atoms replacing ions in both the cation and anion sublattices of the host lattices of the host crystals have been considered. The Mg impurity at cation sites is found to form partially occupied states at the valence-band edge, and may result in p-type conductivity. When Si substitutes for Ga, the impurity band is formed at the conduction-band edge, resulting in n-type conductivity. Si impurities at cation sites, and Mg impurity at anion sites are able to form resonance states in the gap. The influence of impurity clusterization in the host lattice and interstitial sites on electronic properties of c-AlN and c-GaN crystals are modeled. The changes in vacancy- and impurity-state energies, bonding type, localization, density of states at the Fermi level in different host lattices, their dependence on impurity/vacancy concentration are analyzed and compared with the experimental data.

Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon

NASA Astrophysics Data System (ADS)

Horng, S. T.; Goorsky, M. S.

1996-03-01

High-resolution triple-axis x-ray diffractometry and Hall-effect measurements were used to characterize damage evolution and electrical activation in gallium arsenide co-implanted with gallium and carbon ions. Complete p-type activation of GaAs co-implanted with 5×1014 Ga cm-2 and 5×1014 C cm-2 was achieved after rapid thermal annealing at 1100 °C for 10 s. X-ray diffuse scattering was found to increase after rapid thermal annealing at 600-900 °C due to the aggregation of implantation-induced point defects. In this annealing range, there was ˜10%-72% activation. After annealing at higher annealing temperatures, the diffuse scattered intensity decreased drastically; samples that had been annealed at 1000 °C (80% activated) and 1100 °C (˜100% activated) exhibited reciprocal space maps that were indicative of high crystallinity. The hole mobility was about 60 cm2/V s for all samples annealed at 800 °C and above, indicating that the crystal perfection influences dopant activation more strongly than it influences mobility. Since the high-temperature annealing simultaneously increases dopant activation and reduces x-ray diffuse scattering, we conclude that point defect complexes which form at lower annealing temperatures are responsible for both the diffuse scatter and the reduced activation.

Mechanochemical activation and gallium and indiaarsenides surface catalycity

NASA Astrophysics Data System (ADS)

Kirovskaya, I. A.; Mironova, E. V.; Umansky, I. V.; Brueva, O. Yu; Murashova, A. O.; Yureva, A. V.

2018-01-01

The present work has been carried out in terms of determining the possibilities for a clearer identification of the active sites nature, intermediate surface compounds nature, functional groups during adsorption and catalysis, activation of the diamond-like semiconductors surface (in particular, the AIIIBV type) based on mechanochemical studies of the “reaction medium (H2O, iso-C3H7OH) - dispersible semiconductor (GaAs, InAs)” systems. As a result, according to the read kinetic curves of dispersion in water, both acidification and alkalinization of the medium have been established and explained; increased activity of the newly formed surface has been noted; intermediate surface compounds, functional groups appearing on the real surface and under H2O adsorption conditions, adsorption and catalytic decomposition of iso-C3H7OH have been found (with explanation of the origin). The unconcealed role of coordinatively unsaturated atoms as active sites of these processes has been shown; the relative catalytic activity of the semiconductors studied has been evaluated. Practical recommendations on the preferred use of gallium arsenide in semiconductor gas analysis and semiconductor catalysis have been given in literature searches, great care should be taken in constructing both.

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

PubMed

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

Digital Logic and Reconfigurable Interconnects Using Aluminum Gallium Arsenide Electro-Optic Fredkin Gates

DTIC Science & Technology

1994-06-01

length and coupling coefficient for the zero-gap directional coupler are obtained by using Eq. 3.2.39. Bums and Milton Effective Index Method In a 1975...nj) with •i wavegulde thicness b. Effective index N1 is then used to find the effective >Vt.,:, ;- 105 c a ¶ 2 n. n_ z n2 - : n4 Three-Dimensional...constant for the TM, modes is determined in a manner similar to the one used for the TEp modes. First, effective index N1 of 2-D Waveguide I is found by

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

NASA Technical Reports Server (NTRS)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

[Combined use of various laser radiations in thoracic surgery in experimental studies].

PubMed

Ismailov, D A; Khoroshaev, V A; Shishkin, M A; Baĭbekov, I M

1993-01-01

The impact of various types of low-intensive lasers (He-Ne, copper vapour, ultraviolet, infrared, infrared gallium arsenide) on healing of a wound made by CO2 laser at an output power of 25 W was studied in an experiment on 120 albino Wistar rats. It was found that a concurrent application of high- and low-intensive lasers resulted in acceleration of reparative processes in the lung, stimulating the healing of laser-induced wounds. The infrared gallium arsenide laser was demonstrated to be the best tool in stimulating the healing process.

Gadolinium Scandium Gallium Garnet (GSGG) as a Solid-State Laser Host

DTIC Science & Technology

1987-07-01

o*SATI CODSi1.SBEC EM (otne nrvrs fnceayad dniy nb)k ubr ~~~~~~~~ Gadolinium Scandium Gallium Garnet (GSGG)asaSldtteLerHt 17. ABSTRACT 6.SUJCTTEM...certain other garnet materials for replacement. It also addresses the solid-state laser host material Gadolinium Scandium Gal- lium Garnet (GSGG) and its...by neodymium-doped yttrium aluminum garnet (Nd:YAG) or other mate- rials for most applications. In the years after the invention of the ruby laser, in

Gallium nitride optoelectronic devices

NASA Technical Reports Server (NTRS)

Chu, T. L.; Chu, S. S.

1972-01-01

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Involvement of Fumarase C and NADH Oxidase in Metabolic Adaptation of Pseudomonas fluorescens Cells Evoked by Aluminum and Gallium Toxicity▿

PubMed Central

Chenier, Daniel; Beriault, Robin; Mailloux, Ryan; Baquie, Mathurin; Abramia, Gia; Lemire, Joseph; Appanna, Vasu

2008-01-01

Iron (Fe) is a critical element in all aerobic organisms as it participates in a variety of metabolic networks. In this study, aluminum (Al) and gallium (Ga), two Fe mimetics, severely impeded the ability of the soil microbe Pseudomonas fluorescens to perform oxidative phosphorylation. This was achieved by disrupting the activity and expression of complexes I, II, and IV. These toxic metals also inactivated aconitase (ACN) and fumarase A (FUM A), two tricarboxylic acid cycle enzymes dependent on Fe for their catalytic activity, while FUM C, an Fe-independent enzyme, displayed an increase in activity and expression under these stressed situations. Furthermore, in the Al- and Ga-exposed cells, the activity and expression of an H2O-forming NADH oxidase were markedly increased. The incubation of the Al- and Ga-challenged cells in an Fe-containing medium led to the recovery of the affected enzymatic activities. Taken together, these data provide novel insights into how environmental pollutants such as Al and Ga interfere with cellular Fe metabolism and also illustrate the ability of Pseudomonas fluorescens to modulate metabolic networks to combat this situation. PMID:18469122

Measuring the Dispersion in Laser Cavity Mirrors using White-Light Interferometry

DTIC Science & Technology

2008-03-01

mirrors. Two AlGaInP (aluminum gallium indium phosphide ) diode lasers are aligned such that one is polarized vertically while one is polarized...linear crystals, where the index of refraction depends on beam intensity. Short pulses with high peak intensities are well 14 suited to induce the...MEASURING THE DISPERSION OF LASER CAVITY MIRRORS USING WHITE-LIGHT INTERFEROMETRY THESIS Allison S

Focal plane arrays based on Type-II indium arsenide/gallium antimonide superlattices

NASA Astrophysics Data System (ADS)

Delaunay, Pierre-Yves

The goal of this work is to demonstrate that Type-II InAs/GaSb superlattices can perform high quality infrared imaging from the middle (MWIR) to the long (LWIR) wavelength infrared range. Theoretically, focal plane arrays (FPAs) based on this technology could be operated at higher temperatures, with lower dark currents than the leading HgCdTe platform. This effort will focus on the fabrication of MWIR and LWIR FPAs with performance similar to existing infrared cameras. Some applications in the MWIR require fast, sensitive imagers able to sustain frame rates up to 100Hz. Such speed can only be achieved with photon detectors. However, these cameras need to be operated below 170K. Current research in this spectral band focuses on increasing the operating temperature of the FPA to a point where cooling could be performed with compact and reliable thermoelectric coolers. Type-II superlattice was used to demonstrate a camera that presented similar performance to HgCdTe and that could be operated up to room temperature. At 80K, the camera could detect temperature differences as low as 10 mK for an integration time shorter than 25 ms. In the LWIR, the electric performance of Type-II photodiodes is mainly limited by surface leakage. Aggressive processing steps such as hybridization and underfill can increase the dark current of the devices by several orders of magnitude. New cleaning and passivation techniques were used to reduce the dark current of FPA diodes by two orders of magnitudes. The absorbing GaSb substrate was also removed to increase the quantum efficiency of the devices up to 90%. At 80K, a FPA with a 9.6 microm 50%-cutoff in responsivity was able to detect temperature differences as low as 19 mK, only limited by the performance of the testing system. The non-uniformity in responsivity reached 3.8% for a 98.2% operability. The third generation of infrared cameras is based on multi-band imaging in order to improve the recognition capabilities of the imager

Thermal effects of λ = 808 nm GaAlAs diode laser irradiation on different titanium surfaces.

PubMed

Giannelli, Marco; Lasagni, Massimo; Bani, Daniele

2015-12-01

Diode lasers are widely used in dental laser treatment, but little is known about their thermal effects on different titanium implant surfaces. This is a key issue because already a 10 °C increase over the normal body temperature can induce bone injury and compromise osseo-integration. The present study aimed at evaluating the temperature changes and surface alterations experienced by different titanium surfaces upon irradiation with a λ = 808 nm diode laser with different settings and modalities. Titanium discs with surfaces mimicking different dental implant surfaces including TiUnite and anodized, machined surfaces were laser-irradiated in contact and non-contact mode, and with and without airflow cooling. Settings were 0.5-2.0 W for the continuous wave mode and 10-45 μJ, 20 kHz, 5-20 μs for the pulsed wave mode. The results show that the surface characteristics have a marked influence on temperature changes in response to irradiation. The TiUnite surface, corresponding to the osseous interface of dental implants, was the most susceptible to thermal rise, while the machined surfaces, corresponding to the implant collar, were less affected. In non-contact mode and upon continuous wave emission, the temperature rose above the 50 °C tissue damage threshold. Scanning electron microscopy investigation of surface alterations revealed that laser treatment in contact mode resulted in surface scratches even when no irradiation was performed. These findings indicate that the effects of diode laser irradiation on implant surfaces depend on physical features of the titanium coating and that in order to avoid thermal or physical damage to implant surface the irradiation treatment has to be carefully selected.

The electronic structure of indium arsenide/gallium arsenide self-assembled quantum dots in a high magnetic field

NASA Astrophysics Data System (ADS)

Awirothananon, Sunida

The electronic energy levels of dome-shape InAs self-assembled quantum dots (SAQD) grown by the Stranski-Krastanow mode on GaAs substrates are similar to those obtained from a two-dimensional harmonic-oscillator. A simple selection rule allows transitions only that preserve angular momentum, depicted with atomic-like orbital labels s, p, d, f, etc. This electronic structure was examined with photoluminescence (PL) and photoluminescence excitation (PLE) techniques. As well, in magnetic fields up to 28 Tesla applied parallel to the growth direction, SAQD energy-level degeneracies were lifted. The number of branches observed is correlated to the angular momentum. The ground state (GS) level at zero angular momentum is shifted quadratically under the magnetic field and the behavior could be explained with the Fock-Darwin (F-D) spectral model. The effect of annealing at temperatures from 825°C to 900°C in 25°C steps on the SAQD electronic structure was also examined with the PL technique combined with an applied magnetic field in the Faraday configuration. The PL lines were similar to the F-D spectral lines with their degeneracy lifted by the applied magnetic field. These lines exhibited ten (anti-)crossings: three each at 10 T and 28 T, four at 18 T, while the inter-level spacing and the FWHM were reduced with increasing annealing temperature. Thus an increase in the observed (anti-)crossings resulted for the higher anneal temperatures. The in-plane excitonic reduced-mass was inferred from the systematic splitting of the PL p-branches in a magnetic field. The reduced-mass for all the annealed QD samples was about 0.066 m0 +/- 0.012m0 which decreased slightly with anneal temperature. An 8-band k*p model predicted a similar reduced-mass at low alloying of gallium, but an incorrect trend was observed as the alloying increased with annealing temperature. Unrealistic reduced-masses at 50 percent gallium content were reached. This discrepancy is explained assuming the F

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

DOE PAGES

Lan, Yucheng; Li, Jianye; Wong-Ng, Winnie; ...

2016-08-23

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4eV . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE PAGES

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.; ...

2017-03-01

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

PubMed

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

NASA Technical Reports Server (NTRS)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Npn double heterostructure bipolar transistor with ingaasn base region

DOEpatents

Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

2004-07-20

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Micro and nano devices in passive millimetre wave imaging systems

NASA Astrophysics Data System (ADS)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

Gallium-containing anticancer compounds.

PubMed

Chitambar, Christopher R

2012-06-01

There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin's lymphoma and bladder cancer in clinical trials. Gallium can function as an iron mimetic and perturb iron-dependent proliferation and other iron-related processes in tumor cells. Gallium nitrate lacks crossresistance with conventional chemotherapeutic drugs and is not myelosuppressive; it can be used when other drugs have failed or when the blood count is low. Given the therapeutic potential of gallium, newer generations of gallium compounds are now in various phases of preclinical and clinical development. These compounds hold the promise of greater anti-tumor activity against a broader spectrum of cancers. The development of gallium compounds for cancer treatment and their mechanisms of action will be discussed.

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bóckowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.; Watson, M. A.; Blanchard, P.; White, H.

2016-03-01

Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology for laser sources from the UV to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode.

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

NASA Astrophysics Data System (ADS)

Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

2016-03-01

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

Gallium-containing anticancer compounds

PubMed Central

Chitambar, Christopher R

2013-01-01

There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin’s lymphoma and bladder cancer in clinical trials. Gallium can function as an iron mimetic and perturb iron-dependent proliferation and other iron-related processes in tumor cells. Gallium nitrate lacks cross resistance with conventional chemotherapeutic drugs and is not myelosuppressive; it can be used when other drugs have failed or when the blood count is low. Given the therapeutic potential of gallium, newer generations of gallium compounds are now in various phases of preclinical and clinical development. These compounds hold the promise of greater anti-tumor activity against a broader spectrum of cancers. The development of gallium compounds for cancer treatment and their mechanisms of action will be discussed. PMID:22800370

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Comparison of diode laser and Er:YAG lasers in the treatment of ankyloglossia.

PubMed

Aras, Mutan Hamdi; Göregen, Mustafa; Güngörmüş, Metin; Akgül, Hayati Murat

2010-04-01

The purpose of this study was to compare the tolerance of lingual frenectomy with regard to a local anesthesia requirement and comparison of postsurgical discomfort experienced by patients operated on with both diode and erbium:yttrium-aluminium-garnet (Er:YAG) lasers. Ankyloglossia, commonly known as tongue-tie, is a congenital oral anomaly characterized by a short lingual frenulum. A short lingual frenulum may contribute to feeding, speech, and mechanical tongue problems. Sixteen referred patients with tongue mobility complaints were included in this study. A GaAlAs laser device with a continuous wavelength of 808 nm was used in the diode group. Frenulums were incised by applying 2 W of laser power. The Er:YAG laser device with a continuous wavelength of 2940 nm was used in the Er:YAG group. Frenulums were incised by applying 1 W of laser power. The acceptability of the lingual frenectomy without local anesthesia and the degree of the postsurgical discomfort were evaluated. Although the majority of patients (six) could be operated on without local anesthesia in the Er:YAG group, all patients could not be operated on without local anesthetic agent in the diode group. There were no differences between the two groups with regard to pain, chewing, and speaking on the first or seventh day after surgery, whereas patients had more pain in the Er:YAG group than in the diode group the first 3 h after surgery. The results indicate that only the Er:YAG laser can be used for lingual frenectomy without local anesthesia, and there was no difference between the two groups regarding the degree of the postsurgical discomfort except in the first 3 h. In conclusion, these results indicate that the Er:YAG laser is more advantageous than the diode laser in minor soft-tissue surgery because it can be performed without local anesthesia and with only topical anesthesia.

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Visible light metasurfaces based on gallium nitride high contrast gratings

NASA Astrophysics Data System (ADS)

Wang, Zhenhai; He, Shumin; Liu, Qifa; Wang, Wei

2016-05-01

We propose visible-light metasurfaces (VLMs) capable of serving as lens and beam deflecting element based on gallium nitride (GaN) high contrast gratings (HCGs). By precisely manipulating the wavefront of the transmitted light, we theoretically demonstrate an HCG focusing lens with transmissivity of 86.3%, and a VLM with beam deflection angle of 6.09° and transmissivity as high as 91.4%. The proposed all-dielectric metasurfaces are promising for GaN-based visible light-emitting diodes (LEDs), which would be robust and versatile for controlling the output light propagation and polarization, as well as enhancing the extraction efficiency of the LEDs.

Short period strain balanced gallium arsenide nitride/indium arsenide nitride superlattice lattice matched to indium phosphide for mid-infrared photovoltaics

NASA Astrophysics Data System (ADS)

Bhusal, Lekhnath

thermophotovoltaic devices. Integration of the SL structure, which is lattice matched to InP, in the i region of the p(InGaAs)- i(SL) n(InGaAs) diode allowed the possibility of more than two junction thermophotovoltiac device with the enhanced performance in comparison to the conventional p(InGaAs)n(InGaAs) diode.

Effects of low-level laser therapy on orthodontic tooth movement and root resorption after artificial socket preservation.

PubMed

Seifi, Massoud; Atri, Faezeh; Yazdani, Mohammad Masoud

2014-01-01

Low- level laser therapy has been used to stimulate the orthodontic tooth movements (OTM) previously. Furthermore, in the orthodontic treatments accompanying tooth extractions, the adjacent teeth move towards the extraction sites and close the space in some cases. Then, the adjacent tooth movements must be prevented in the treatments requiring space. Laser stimulates and at some doses decelerates tooth movement; it also improves healing process and enhances osteogenesis. Hence, it can prevent movement by osteogenesis adjacent to the tooth. The present study investigated the effects of low-level laser therapy on the OTM and root resorption following artificial socket preservation. In this experimental animal trial, 16 male albino rabbits were selected with similar characteristics and randomly divided in two groups. Under general anesthesia, an artificial socket, 8 mm in height, was created in the mesial aspect of the first premolars of the rabbits and filled with demineralized freeze dried bone allograft (DFDBA). The first premolars were connected to the incisors using nickel titanium coil springs. In experimental group, gallium-aluminum-arsenide (GaAlAs) laser was irritated mesial to first premolar where artificial socket was created continuously (808 nm). The cycle was 10 days irritation, 14 days rest, 10 days irritation, 14 days rest (Biostimulation mode). Control group was not laser irradiated. All animals were sacrificed after 48 days and the distance between the distal aspect of the first premolars, and the mesial surface of the second premolars was measured with leaf gauge. The specimens underwent histological assessments. Integrity of root and its resorption was observed under microscope calibration. The size of resorption lacunae was calculated in mm(2). Normality of data was proved according to Kolmogorov-Smirnov analysis, and Student's t-test was done. P value less than 0.05 was considered as significant. The mean OTM were 5.68 ± 1.21 mm in the control

Tunnel barrier schottky

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Rongming; Cao, Yu; Li, Zijian

2018-02-20

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Effects of erbium-and chromium-doped yttrium scandium gallium garnet and diode lasers on the surfaces of restorative dental materials: a scanning electron microscope study.

PubMed

Hatipoglu, M; Barutcigil, C

2015-01-01

The aim of this study is to evaluate the potential effects of laser irradiation, which is commonly performed in periodontal surgery, on the surfaces of restorative materials. Five different restorative dental materials were used in this study, as follows: (1) Resin composite, (2) poly acid-modified resin composite (compomer), (3) conventional glass ionomer cement (GIC), (4) resin-modified glass ionomer cement (RMGIC), and (5) amalgam. Four cylindrical samples (8 mm diameter, 2 mm height) were prepared for each restorative material. In addition, four freshly extracted, sound human incisors teeth were selected. Two different laser systems commonly used in periodontal surgery were examined in this study: A 810 nm diode laser at a setting of 1 W with continuous-phase laser irradiation for 10 s, and an erbium-and chromium-doped yttrium scandium gallium garnet (Er, Cr: YSGG) laser at settings of 2.5 W, 3.25 W, and 4 W with 25 Hz laser irradiation for 10 s. Scanning electron microscopy (SEM) analysis was performed to evaluate the morphology and surface deformation of the restorative materials and tooth surfaces. According to the SEM images, the Er, Cr: YSGG laser causes irradiation markings that appear as demineralized surfaces on tooth samples. The Er, Cr: YSGG laser also caused deep defects on composite, compomer, and RMGIC surfaces because of its high power, and the ablation was deeper for these samples. High-magnification SEM images of GIC samples showed the melting and combustion effects of the Er, Cr: YSGG laser, which increased as the laser power was increased. In amalgam samples, neither laser left significant harmful effects at the lowest power setting. The diode laser did cause irradiation markings, but they were insignificant compared with those left by the Er, Cr: YSGG laser on the surfaces of the different materials and teeth. Within the limitations of this study, it can be concluded that Er, Cr: YSGG laser irradiation could cause distortions of the surfaces

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Renal amyloidosis. Evaluation by gallium imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, V.W.; Skinner, M.; Cohen, A.S.

1986-09-01

A study has been performed to evaluate the efficacy of gallium imaging in the detection of renal amyloidosis. Ten of the 11 patients who had biopsy-proven renal amyloidosis demonstrated marked uptake in both kidneys. One patient revealed moderate gallium uptake in his kidneys. None of the patients had underlying renal or extrarenal pathology other than amyloidosis, which could account for renal gallium uptake (renal infection, neoplasm, hepatic failure or frequent blood transfusions). Four patients also had extrarenal foci of abnormal gallium uptake, suggesting other sites of amyloid deposits. Our data strongly suggest that gallium imaging has a high sensitivity formore » detection of renal amyloidosis. Its specificity is enhanced significantly by careful review of the clinical history to exclude other known causes of renal gallium uptake. Potentially, gallium imaging may be used to monitor the progress of patients under experimental therapy.« less

Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

NASA Astrophysics Data System (ADS)

Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

2016-06-01

We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

49 CFR 173.162 - Gallium.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet the...

49 CFR 173.162 - Gallium.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 2 2012-10-01 2012-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet the...

49 CFR 173.162 - Gallium.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Gallium. 173.162 Section 173.162 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.162 Gallium. (a) Except when packaged in cylinders or steel flasks, gallium must be packaged in packagings which meet the...

Study of the structural role of gallium and aluminum in 45S5 bioactive glasses by molecular dynamics simulations.

PubMed

Malavasi, Gianluca; Pedone, Alfonso; Menziani, Maria Cristina

2013-04-18

The structural properties of phosphosilicate glasses based on the 45S5 Bioglass doped with gallium and aluminum (46.2 SiO2·24.3Na2O·26.9CaO·2.6P2O5·1.0X2O3, X = Ga or Al) are investigated by means of classical molecular dynamics simulations. Structural features of the two compositions are compared with those of the original 45S5 Bioglass in order to relate them to the different known bioactivities of these materials. Differences in the coordination environments of Ga and Al, network connectivity, and ion aggregation reveal a microscopic model of these glasses which supports the interpretation of the experimental data and provides new insight into the different biological behaviors of Ga- and Al-containing phosphosilicate glasses. Although Ga is found predominantly in a 4-fold coordination environment, small amounts of 5- and 6-fold coordinated atoms have been detected depending on the interatomic potential model employed. This suggests its possible intermediate role in phosphosilicate glasses. On the contrary, Al plays a network former role and leads to glasses with a more polymerized structure. Interestingly, the results show an increased propensity for aggregation of the Ca(2+) and PO4(3-) ions in the Al-containing phosphosilicate glasses with respect to the Ga-containing ones. This leads to insoluble calcium-phosphate-rich regions not detected in the bioactive glasses.

Holographic fabrication of gratings in metal substrates

NASA Technical Reports Server (NTRS)

Fletcher, R. M.; Wagner, D. K.; Ballantyne, J. M.

1982-01-01

A program for investigating the grain enlargement resulting from the laser recrystallization of a thin gallium arsenide film on a patterned substrate, a technique known as graphoepitaxy was evaluated. More specifically, the effects of recrystallizing an uncapped gallium arsenide film using a continuous wave neodymium YAG laser operating at 1.06 microns were studied. In an effort to minimize arsenic loss from the film, the specimens were held in an arsine atmosphere during recrystallization. Two methods for fabricating patterned substrates were developed, one using reactive ion etching of a molybdenum film on both sapphire and silicon substates and another by preferential wet etching of a silicon substrate onto which a film of molybdenum was subsequently deposited.

Solar-Electrochemical Power System for a Mars Mission

NASA Technical Reports Server (NTRS)

Withrow, Colleen A.; Morales, Nelson

1994-01-01

This report documents a sizing study of a variety of solar electrochemical power systems for the intercenter NASA study known as 'Mars Exploration Reference Mission'. Power systems are characterized for a variety of rovers, habitation modules, and space transport vehicles based on requirements derived from the reference mission. The mission features a six-person crew living on Mars for 500 days. Mission power requirements range from 4 kWe to 120 kWe. Primary hydrogen and oxygen fuel cells, regenerative hydrogen and oxygen fuel cells, sodium sulfur batteries advanced photovoltaic solar arrays of gallium arsenide on germanium with tracking and nontracking mechanisms, and tent solar arrays of gallium arsenide on germanium are evaluated and compared.

Structure-composition-property relationships in 5xxx series aluminum alloys

NASA Astrophysics Data System (ADS)

Unocic, Kinga A.

related to Ga accumulation were discovered, that produce significant microstructural artifacts. It is well known that liquid gallium can cause Liquid Metal Embitterment (LME) aluminum alloys, and gallium readily penetrates aluminum grain boundaries. Low energy Ar ion nanomilling is potentially quite effective at removing gallium from the external and internal surfaces of aluminum thin foils, but can still leave persistent artifacts. Al-Mg alloys can be also susceptible to localized corrosion such as pitting corrosion in the presence of chloride ions. In this study the phases responsible for this type of corrosion were identified. ASSET (ASTM G66) test was used to determine the influence of heat-treatment on pitting corrosion on various modified AA5083 alloys. Additionally, potentiodynamic polarization as well as potentiostatic measurements in conjunction with SEM analysis were carried out to obtain pitting potential (Epit) and to determine the location of metastable pit initiation, respectively.

Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

PubMed

Sarkar, Sujoy; Sampath, S

2016-05-11

A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

Mineral resource of the month: gallium

USGS Publications Warehouse

Jaskula, Brian W.

2009-01-01

The metal element gallium occurs in very small concentrations in rocks and ores of other metals — native gallium is not known. As society gets more and more high-tech, gallium becomes more useful. Gallium is one of only five metals that are liquid at or close to room temperature. It has one of the longest liquid ranges of any metal (29.8 degrees Celsius to 2204 degrees Celsius) and has a low vapor pressure even at high temperatures. Ultra-pure gallium has a brilliant silvery appearance, and the solid metal exhibits conchoidal fracture similar to glass.

Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

NASA Astrophysics Data System (ADS)

Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

2017-01-01

The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

Controlled Electrochemical Deformation of Liquid-Phase Gallium.

PubMed

Chrimes, Adam F; Berean, Kyle J; Mitchell, Arnan; Rosengarten, Gary; Kalantar-zadeh, Kourosh

2016-02-17

Pure gallium is a soft metal with a low temperature melting point of 29.8 °C. This low melting temperature can potentially be employed for creating optical components with changeable configurations on demand by manipulating gallium in its liquid state. Gallium is a smooth and highly reflective metal that can be readily maneuvered using electric fields. These features allow gallium to be used as a reconfigurable optical reflector. This work demonstrates the use of gallium for creating reconfigurable optical reflectors manipulated through the use of electric fields when gallium is in a liquid state. The use of gallium allows the formed structures to be frozen and preserved as long as the temperature of the metal remains below its melting temperature. The lens can be readily reshaped by raising the temperature above the melting point and reapplying an electric field to produce a different curvature of the gallium reflector.

Commentary: Is There Clinical Benefit From Using a Diode or Neodymium:Yttrium-Aluminum-Garnet Laser in the Treatment of Periodontitis?

PubMed

Cobb, Charles M

2016-10-01

Despite a quarter of a century of laser research, there is a persistent debate regarding the efficacy of dental lasers in the treatment of periodontitis or periodontal maintenance therapy. There are many claims and much hyperbole surrounding the use of lasers, either as a monotherapy or adjunctive to scaling and root planing, to treat periodontitis. There is little evidence that using a diode or neodymium:yttrium-aluminum-garnet laser adds clinical value over and above conventional non-surgical or surgical periodontal treatment. There is a significant need for better designed human clinical trials. Data from such trials should be analyzed according to initial probing depth and characteristics of the treated sites, such as non-molar, molar flat surfaces, and molar furcations, and evaluated for long-term post-treatment results.

Growing Gallium Arsenide On Silicon

NASA Technical Reports Server (NTRS)

Radhakrishnan, Gouri

1989-01-01

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Synchrotron X-Ray Fluorescence Microscopy of Gallium in Bladder Tissue following Gallium Maltolate Administration during Urinary Tract Infection

PubMed Central

Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L.; Blyth, Robert I. R.; Sham, Tsun-Kong; Dowling, Patricia M.; Thompson, Julie

2013-01-01

A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli. PMID:23877680

Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

NASA Astrophysics Data System (ADS)

Splith, Daniel; Müller, Stefan; von Wenckstern, Holger; Grundmann, Marius

2018-02-01

When investigating Schottky contacts on heteroepitaxial β-Ga2O3 thin films, several non-idealities are observed in the current voltage characteristics, which cannot be accounted for with the standard diode current models. In this article, we therefore employed a model for the rigorous calculation of the diode currents in order to understand the origin of this non-idealities. Using the model and a few parameters determined from the measurements, we were able to simulate the characteristics with good agreement to the measured data for temperatures between 30 °C and 150 °C. Fitting of the simulated curves to the measured curves allows a deeper insight into the microscopic origins of said non-idealities.

Geant4 Predictions of Energy Spectra in Typical Space Radiation Environment

NASA Technical Reports Server (NTRS)

Sabra, M. S.; Barghouty, A. F.

2014-01-01

Accurate knowledge of energy spectra inside spacecraft is important for protecting astronauts as well as sensitive electronics from the harmful effects of space radiation. Such knowledge allows one to confidently map the radiation environment inside the vehicle. The purpose of this talk is to present preliminary calculations for energy spectra inside a spherical shell shielding and behind a slab in typical space radiation environment using the 3D Monte-Carlo transport code Geant4. We have simulated proton and iron isotropic sources and beams impinging on Aluminum and Gallium arsenide (GaAs) targets at energies of 0.2, 0.6, 1, and 10 GeV/u. If time permits, other radiation sources and beams (_, C, O) and targets (C, Si, Ge, water) will be presented. The results are compared to ground-based measurements where available.

Interlayer interaction and mechanical properties in multi-layer graphene, Boron-Nitride, Aluminum-Nitride and Gallium-Nitride graphene-like structure: A quantum-mechanical DFT study

NASA Astrophysics Data System (ADS)

Ghorbanzadeh Ahangari, Morteza; Fereidoon, A.; Hamed Mashhadzadeh, Amin

2017-12-01

In present study, we investigated mechanical, electronic and interlayer properties of mono, bi and 3layer of Boron-Nitride (B-N), Aluminum-Nitride (Al-N) and Gallium-Nitride (Ga-N) graphene sheets and compared these results with results obtained from carbonic graphenes (C-graphenes). For reaching this purpose, first we optimized the geometrical parameters of these graphenes by using density functional theory (DFT) method. Then we calculated Young's modulus of graphene sheet by compressing and then elongating these sheets in small increment. Our results indicates that Young's modulus of graphenes didn't changed obviously by increasing the number of layer sheet. We also found that carbonic graphene has greatest Young's modulus among another mentioned sheets because of smallest equilibrium distance between its elements. Next we modeled the van der Waals interfacial interaction exist between two sheets with classical spring model by using general form of Lennard-Jones (L-J) potential for all of mentioned graphenes. For calculating L-J parameters (ε and σ), the potential energy between layers of mentioned graphene as a function of the separation distance was plotted. Moreover, the density of states (DOS) are calculated to understand the electronic properties of these systems better.

Effects of the bleaching procedures on enamel micro-hardness: Plasma Arc and diode laser comparison.

PubMed

Nematianaraki, Saeid; Fekrazad, Reza; Naghibi, Nasim; Kalhori, Katayoun Am; Junior, Aldo Brugnera

2015-10-02

One of the major side effects of vital bleaching is the reduction of enamel micro-hardness. The purpose of this study was to evaluate the influence of two different bleaching systems, Plasma Arc and GaAlAs laser, on the enamel micro-hardness. 15 freshly extracted human third molars were sectioned to prepare 30 enamel blocks (5×5 mm). These samples were then randomly divided into 2 groups of 15 each (n=15): a plasma arc bleaching group (: 350-700 nm) + 35% Hydrogen Peroxide whitening gel and a laser bleaching group (GaAlAs laser, λ: 810 nm, P: 10 W, CW, Special Tip) + 35% Hydrogen Peroxide whitening gel. Samples were subjected to the Vickers micro-hardness test (VHN) at a load of 50 g for 15s before and after treatment. Data were statistically analyzed by a Mann-Whitney test (p≤0.05). In the GaAlAs laser group, the enamel micro-hardness was 618.2 before and was reduced to 544.6 after bleaching procedures. In the plasma arc group, the enamel micro-hardness was 644.8 before and 498.9 after bleaching. Although both techniques significantly reduced VHN, plasma arc bleaching resulted in a 22.62% reduction in VHN for enamel micro-hardness, whereas an 11.89% reduction in VHN was observed for laser bleaching; this difference is statistically significant (p<0.001). Both bleaching techniques reduced enamel micro-hardness, although the reduction is much less significant with the GaAlAs laser than with the plasma arc. Therefore GaAlAs laser bleaching has fewer harmful effects than plasma arc in respect to enamel micro-hardness reduction.

The Preparation and Structural Characterization of Three Structural Types of Gallium Compounds Derived from Gallium (II) Chloride

NASA Technical Reports Server (NTRS)

Gordon, Edward M.; Hepp, Aloysius F.; Duraj. Stan A.; Habash, Tuhfeh S.; Fanwick, Phillip E.; Schupp, John D.; Eckles, William E.; Long, Shawn

1997-01-01

The three compounds Ga2Cl4(4-mepy)2 (1),[GaCl2(4-mepy)4]GaCl4x1/2(4-mepy); (2) and GaCl2(4-mepy)2(S2CNEt2); (3) (4-mepy= 4-methylpyridine) have been prepared from reactions of gallium (II) chloride in 4-methylpyridine and characterized by single-crystal X-ray analysis. Small variations in the reaction conditions for gallium(II) chloride can produce crystals with substantially different structural properties. The three compounds described here encompass a neutral gallium(II) dimer in which each gallium is four-coordinate, an ionic compound containing both anionic and cationic gallium complex ions with different coordination numbers and a neutral six-coordinate heteroleptic

Construction of Gallium Point at NMIJ

NASA Astrophysics Data System (ADS)

Widiatmo, J. V.; Saito, I.; Yamazawa, K.

2017-03-01

Two open-type gallium point cells were fabricated using ingots whose nominal purities are 7N. Measurement systems for the realization of the melting point of gallium using these cells were built. The melting point of gallium is repeatedly realized by means of the measurement systems for evaluating the repeatability. Measurements for evaluating the effect of hydrostatic pressure coming from the molten gallium existing during the melting process and the effect of gas pressure that fills the cell were also performed. Direct cell comparisons between those cells were conducted. This comparison was aimed to evaluate the consistency of each cell, especially related to the nominal purity. Direct cell comparison between the open-type and the sealed-type gallium point cell was also conducted. Chemical analysis was conducted using samples extracted from ingots used in both the newly built open-type gallium point cells, from which the effect of impurities in the ingot was evaluated.

Mast cell curve-response in partial Achilles tendon rupture after 830 nm phototherapy.

PubMed

Pinfildi, Carlos E; da Silva, Érika P Rampazo; Folha, Roberta A C; Turchetto, Paola C G; Monteiro, Paola Pkp; Antunes, Arainy; Hochman, Bernardo S

2014-02-01

The aim of this study was to quantify mast cells at different time intervals after partial Achilles tendon rupture in rats treated with low-level laser therapy (LLLT). There is a high incidence of lesions and ruptures in the Achilles tendon that can take weeks and even months to heal completely. As the mast cells help in the healing repair phase, and LLLT has favorable effects on this tissue repair process, study of this modality on the quantity of mastocytes in the ruptured tendon is relevant. Sixty Wistar rats were subjected to partial Achilles' tendon rupture by direct trauma, randomized into 10 groups, and then divided into the group treated with 80 mW aluminum gallium arsenide infrared laser diode, continuous wave, 2.8 W/cm(2) power density, 40 J/cm(2) energy density, and 1.12 J total energy, and the simulation group. Both the groups were subdivided according to the histological assessment period of the sample, either 6 h, 12 h, 24 h, 2 days, or 3 days after the rupture, to quantify the mastocytes in the Achilles' tendon. The group subjected to LLLT presented a greater quantity of mastocytes in the periods of 6 h, 12 h, 24 h, 2 days, and 3 days after rupture, compared with the simulation groups, but differences were detected between the sample assessment periods only in the simulation group. LLLT was shown to increase the quantity of mastocytes in the assessment periods compared with the simulation groups.

NASA-OAST photovoltaic energy conversion program

NASA Technical Reports Server (NTRS)

Mullin, J. P.; Loria, J. C.

1984-01-01

The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

The solubility of gallium oxide in vapor and two-phase fluid filtration in hydrothermal systems

NASA Astrophysics Data System (ADS)

Bychkov, Andrew; Matveeva, Svetlana; Nekrasov, Stanislav

2010-05-01

The solubility of gallium and aluminum oxides in gas phase in the system Ga2O3 (Al2O3)-HCl-H2O was studied at 150-350°C and pressure up to saturated vapor. The concentration of gallium increases with the increasing of HCl pressure. The formulae of gallium gaseous specie was determined as GaOHCl2. The constant of gallium oxide solubility reaction was calculated at 150, 200, 250, 300 and 350°C. The concentration of aluminum in gas phase is insignificant in the same conditions. The possibility of gallium transportation in gas phase with small quantity of Al allow to divide this elements in hydrothermal processes with gas phase. The Ga/Al ratio in muscovite can be used as the indicator of gas phase separation and condensation. This indicator was not considered in the geochemical literature earlier. The separation of gas and liquid phases was determined in Akchatau (Kazahstan) and Spokoinoe (Russia) greisen W deposit by carbon isotope fractionation of carbon dioxide in fluid inclusion. The important feature of both ore mains is heterogenization and boiling of ore-forming fluids. Greisen ore bodies are formed as a result of strongly focused solution flow in the T-P gradient fields. It is possible to divide ore bodies of Akchatau in two types: muscovite and quartz. Muscovite type veins are thin and have small metasyntactic zone. Quartz type veins are localized in fault with large vertical extent (500 m) and content the large quantity of wolframite. These veins formed in condition of significant pressure decreasing from 2.5 to 0.5 kbar with fluid boiling. Gas and liquid phase separation specifies the vertical zonality of quartz type veins. The gas phase with the high gallium concentration is separated from a flow of liquid phase. Liquid phase react with the granites forming greisen metasomatites. Condensation of the gas phase in upper parts of massive produces the increasing of Ga/Al ratio in muscovite 3-5 times more, then in granites and bottom part of vein (from 2×10

Evaluation of Fairchild's Gate Drive Optocoupler, Type FOD3150, Under Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Adhad; Panko, Scott

2010-01-01

An optocoupler is a semiconductor device that is used to transfer a signal between different parts of a circuit that need to be electrically isolated from one another - for example, where a high voltage is to be switched with a low voltage control signal. Optocouplers often can be used in place of relays. These optocouplers utilize an infrared LED (light emitting diode) and a photodetector such as a silicon controlled rectifier or photosensitive silicon diode for the transfer of the electronic signal between components of a circuit by means of a short optical transmission channel. For maximum coupling, the wave-length responses of the LED and the detector should be very similar. In switch-mode power supply applications, optocouplers offer advantages over transformers by virtue of simpler circuit design, reduced weight, and DC coupling capability. The effects of extreme temperature exposure and thermal cycling on the performance of a commercial-off-the-shelf (COTS) optocoupler, Fairchild FOD3150, were evaluated in this work. This 1.0 A output current, high noise immunity gate drive optocoupler utilizes an aluminum gallium arsenide (AlGaAs) LED, is capable of driving most 800V/20A IGBT/MOSFETs, and is suited for fast switching in motor control inverter applications and high performance power systems. Some of the specifications of the isolator chip are listed. The device was evaluated in terms of output response, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays (using a 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PLH)) transitions). The output supply current was also obtained. These parameters were recorded at various test temperatures between -190 C and +110 C.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

PubMed Central

Jiang, Shengxiang; Feng, Yulong; Chen, Zhizhong; Zhang, Lisheng; Jiang, Xianzhe; Jiao, Qianqian; Li, Junze; Chen, Yifan; Li, Dongsan; Liu, Lijian; Yu, Tongjun; Shen, Bo; Zhang, Guoyi

2016-01-01

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device. PMID:26902178

Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

NASA Technical Reports Server (NTRS)

Gourrier, S.; Mircea, A.; Simondet, F.

1980-01-01

The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowers, A.T.; Christman, J.A.; Bremser, M.D.

1997-10-01

Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO{sub 2} layer and etched to form arrays of either 1, 3, or 5 {mu}m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 {mu}m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10{endash}100 nA and required grid voltages rangingmore » from 20{endash}110 V. The grid currents were typically 1 to 10{sup 4} times the collector currents. {copyright} {ital 1997 American Institute of Physics.}« less

Generator for gallium-68 and compositions obtained therefrom

DOEpatents

Neirinckx, Rudi D.; Davis, Michael A.

1981-01-01

A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

40 CFR 469.26 - Pretreatment standards for existing sources (PSES).

Code of Federal Regulations, 2011 CFR

2011-07-01

... Pollutant or pollutant property Maximum for any 1 day Average of daily values for 30 consecutive days.... 3 The arsenic (T) limitation only applies to manufacturers of gallium or indium arsenide crystals...

Tuning of the emission color of organic light emitting diodes via smartly designed aluminum plasmonics

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim; List-Kratochvil, Emil J. W.

2017-02-01

With the invention of phosphorescent emitter material, organic light emitting diodes with internal quantum yields of up to 100% can be realized. Still, the extraction of the light from the OLED stack is a bottleneck, which hampers the availability of OLEDs with large external quantum efficiencies. In this contribution, we highlight the advantages of integrating aluminum nanodisc arrays into the OLED stack. By this, not only the out-coupling of light can be enhanced, but also the emission color can be tailored and controlled. By means of extinction- and fluorescence spectroscopy measurements we are able to show how the sharp features observed in the extinction measurements correlate with a very selective fluorescence enhancement of the organic emitter materials used in these studies. At the same time, localized surface plasmon resonances of the individual nanodiscs further modify the emission spectrum, e.g., by filtering the green emission tail. A combination of these factors leads to a modification of the emission color in between CIE1931 (x,y) chromaticity coordinates of (0.149, 0.225) and (0.152, 0.352). After accounting for the sensitivity of the human eye, we are able to demonstrate that this adjustment of the chromaticity coordinates goes is accompanied by an increase in device efficiency.

Antitumor effect of novel gallium compounds and efficacy of nanoparticle-mediated gallium delivery in lung cancer.

PubMed

Wehrung, Daniel; Oyewumi, Moses O

2012-02-01

The widespread application of gallium (Ga) in cancer therapy has been greatly hampered by lack of specificity resulting in poor tumor accumulation and retention. To address the challenge, two lipophilic gallium (III) compounds (gallium hexanedione; GaH and gallium acetylacetonate; GaAcAc) were synthesized and antitumor studies were conducted in human lung adenocarcinoma (A549) cells. Nanoparticles (NPs) containing various concentrations of the Ga compounds were prepared using a binary mixture of Gelucire 44/14 and cetyl alcohol as matrix materials. NPs were characterized based on size, morphology, stability and biocompatibility. Antitumor effects of free or NP-loaded Ga compounds were investigated based on cell viability, production of reactive oxygen species and reduction of mitochondrial potential. Compared to free Ga compounds, cytotoxicity of NP-loaded Ga (5-150 microg/ml) was less dependent on concentration and incubation time (exposure) with A549 cells. NP-mediated delivery (5-150 microg Ga/ml) enhanced antitumor effects of Ga compounds and the effect was pronounced at: (i) shorter incubation times; and (ii) at low concentrations of gallium (approximately 50 microg/ml) (p < 0.0006). Additional studies showed that NP-mediated Ga delivery was not dependent on transferrin receptor uptake mechanism (p > 0.13) suggesting the potential in overcoming gallium resistance in some tumors. In general, preparation of stable and biocompatible NPs that facilitated Ga tumor uptake and antitumor effects could be effective in gallium-based cancer therapy.

Recent Accomplishments in Laser-Photovoltaic Wireless Power Transmission

NASA Technical Reports Server (NTRS)

Fikes, John C.; Henley, Mark W.; Mankins, John C.; Howell, Joe T.; Fork, Richard L.; Cole, Spencer T.; Skinner, Mark

2003-01-01

Wireless power transmission can be accomplished over long distances using laser power sources and photovoltaic receivers. Recent research at AMOS has improved our understanding of the use of this technology for practical applications. Research by NASA, Boeing, the University of Alabama-Huntsville, the University of Colorado, Harvey Mudd College, and the Naval Postgraduate School has tested various commercial lasers and photovoltaic receiver configurations. Lasers used in testing have included gaseous argon and krypton, solid-state diodes, and fiber optic sources, at wavelengths ranging from the visible to the near infra-red. A variety of Silicon and Gallium Arsenide photovoltaic have been tested with these sources. Safe operating procedures have been established, and initial tests have been conducted in the open air at AMOS facilities. This research is progressing toward longer distance ground demonstrations of the technology and practical near-term space demonstrations.

Electrically Driven Photonic Crystal Nanocavity Devices

DTIC Science & Technology

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

Gallium-67 activity in bronchoalveolar lavage fluid in sarcoidosis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trauth, H.A.; Heimes, K.; Schubotz, R.

1986-01-01

Roentgenograms and gallium-67 scans and gallium-67 counts of BAL fluid samples, together with differential cell counts, have proved to be useful in assessing activity and lung involvement in sarcoidosis. In active pulmonary sarcoidosis gallium-67 scans are usually positive. Quantitation of gallium-67 uptake in lung scans, however, may be difficult. Because gallium-67 uptake and cell counts in BAL fluid may be correlated, we set out to investigate gallium-67 activity in BAL fluid recovered from patient of different groups. Sixteen patients with recently diagnosed and untreated sarcoidosis, nine patients with healthy lungs, and five patients with CFA were studied. Gallium-67 uptake ofmore » the lung, gallium-67 activity in the lavage fluid, SACE and LACE levels, and alpha 1-AT activity were measured. Significantly more gallium-67 activity was found in BAL fluid from sarcoidosis patients than in that from CFA patients (alpha = .001) or patients with healthy lungs (alpha = .001). Gallium-67 activity in BAL fluid could be well correlated with the number of lymphocytes in BAL fluid, but poorly with the number of macrophages. Subjects with increased levels of SACE or serum alpha 1-AT showed higher lavage gallium-67 activity than did normals, but no correlation could be established. High gallium-67 activity in lavage fluid may be correlated with acute sarcoidosis or physiological deterioration; low activity denotes change for the better. The results show that gallium-67 counts in BAL fluid reflects the intensity of gallium-67 uptake and thus of activity of pulmonary sarcoidosis.« less

The measurement of atmospheric visibility with Lidar: TSC field test results

DOT National Transportation Integrated Search

1974-03-01

The report represents a technical feasibility study of the use of lidar for determining the atmospheric extinction coefficient in low visibility. Measurements were made with three laser sources: a Q-switched ruby laser, a GaAlAs diode laser array, an...

Flip-chip light emitting diode with resonant optical microcavity

DOEpatents

Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

2005-11-29

A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

Evaluation of solar cell materials for a Solar Power Satellite

NASA Technical Reports Server (NTRS)

Glaser, P. E.; Almgren, D. W.; Csigi, K. I.

1980-01-01

Alternative solar cell materials being considered for the solar power satellite are described and price, production, and availability projections through the year 2000 are presented. The chief materials considered are silicon and gallium arsenide.

Monitoring of catalyst performance in CO2 lasers using frequency modulation spectroscopy with diode lasers

NASA Technical Reports Server (NTRS)

Wang, Liang-Guo; Sachse, Glen

1990-01-01

Closed-cycle CO2 laser operation with removal of O2 and regeneration of CO2 can be achieved by catalytic CO-O2 recombination. Both parametric studies of the optimum catalyst formulation and long-term performance tests require on line monitoring of CO, O2 and CO2 concentrations. There are several existing methods for molecular oxygen detection. These methods are either intrusive (such as electrochemical method or mass spectrometry) or very expensive (such as CARS, UV laser absorption). Researchers demonstrated a high-sensitivity spectroscopic measurement of O2 using the two-tone frequency modulation spectroscopy (FMS) technique with a near infrared GaAlAs diode laser. Besides its inexpensive cost, fast response time, nonintrusive measurements and high sensitivity, this technique may also be used to differentiate between isotopes due to its high spectroscopic resolution. This frequency modulation spectroscopy technique could also be applied for the on-line monitoring of CO and CO2 using InGaAsP diode lasers operation in the 1.55 microns region and H2O in the 1.3 microns region. The existence of single mode optical fibers at the near infrared region makes it possible to combine FMS with optical fiber technology. Optical fiber FMS is particularly suitable for making point-measurements at one or more locations in the CO2 laser/catalyst system.

Interface state density of free-standing GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Ashraf, H.; Imran Arshad, M.; Hageman, P. R.; Asghar, M.; Wahab, Q.

2010-09-01

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 × 1017 cm-3, resulting in a lower reverse breakdown of around -12 V. The interface state density (NSS) as a function of EC-ESS is found to be in the range 4.23 × 1012-3.87 × 1011 eV-1 cm-2 (below the conduction band) from Ec-0.90 to EC-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Carbon nanothermometer containing gallium.

PubMed

Gao, Yihua; Bando, Yoshio

2002-02-07

Many applications have been found for carbon nanotubes, and we can now add a role as a 'nanothermometer' to this list. We describe how the height of a continuous, unidimensional column of liquid gallium inside a carbon nanotube (up to about 10 micrometres long and about 75 nanometres in diameter) varies linearly and reproducibly in the temperature range 50-500 degrees C, with an expansion coefficient that is the same as for gallium in the macroscopic state. We chose gallium as our thermal indicator because it has one of the greatest liquid ranges of any metal (29.78-2,403 degrees C) and a low vapour pressure even at high temperatures. This nanothermometer should be suitable for use in a wide variety of microenvironments.

Gallium Electromagnetic (GEM) Thrustor Concept and Design

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Markusic, Thomas E.

2006-01-01

We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

40 CFR 469.28 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2011 CFR

2011-07-01

... property Maximum for any 1 day Average of daily values for 30 consecutive days Milligrams per liter (mg/l...) limitation only applies to manufacturers of gallium or indium arsenide crystals. (b) A new source submitting...

Ultrafast electronic dynamics in unipolar n-doped indium gallium arsenide/gallium arsenide self-assembled quantum dots

NASA Astrophysics Data System (ADS)

Wu, Zong-Kwei J.

2006-12-01

Photodetectors based on intraband infrared absorption in the quantum dots have demonstrated improved performance over its quantum well counterpart by lower dark current, relative temperature insensitivity, and its ability for normal incidence operation. Various scattering processes, including phonon emission/absorption and carrier-carrier scattering, are critical in understanding device operation on the fundamental level. In previous studies, our group has investigated carrier dynamics in both low- and high-density regime. Ultrafast electron-hole scattering and the predicted phonon bottleneck effect in intrinsic quantum dots have been observed. Further examination on electron dynamics in unipolar structures is presented in this thesis. We used n-doped quantum dot in mid-infrared photodetector device structure to study the electron dynamics in unipolar structure. Differential transmission spectroscopy with mid-infrared intraband pump and optical interband probe was implemented to measure the electron dynamics directly without creating extra electron-hole pair, Electron relaxation after excitation was measured under various density and temperature conditions. Rapid capture into quantum dot within ˜ 10 ps was observed due to Auger-type electron-electron scattering. Intradot relaxation from the quantum dot excited state to the ground state was also observed on the time scale of 100 ps. With highly doped electron density in the structure, the inter-sublevel relaxation is dominated by Auger-type electron-electron scattering and the phonon bottleneck effect is circumvented. Nanosecond-scale recovery in larger-sized quantum dots was observed, not intrinsic to electron dynamics but due to band-bending and built-in voltage drift. An ensemble Monte Carlo simulation was also established to model the dynamics in quantum dots and in goad agreement with the experimental results. We presented a comprehensive picture of electron dynamics in the unipolar quantum dot structure. Although the phonon bottleneck is circumvented with high doped electron density, relaxation processes in unipolar quantum dots have been measured with time scales longer than that of bipolar systems. The results explain the operation principles of the quantum dot infrared photodetector on a microscopic level and provide basic understanding for future applications and designs.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Metal-organic vapor phase epitaxy of (GaAl)As for 0.85-μm laser diodes

NASA Astrophysics Data System (ADS)

Jacobs, K.; Bugge, F.; Butzke, G.; Lehmann, L.; Schimko, R.

1988-11-01

Metal-organic vapor phase epitaxy was used to grow stripe heterolaser diodes that were hitherto fabricated by liquid phase epitaxy. The main relationships between the growth parameters (partial input pressures, temperatures) and the properties of materials (thicknesses, solid-solution compositions, carrier densities) were investigated. The results were in full agreement with the mechanism of growth controlled by a vapor-phase diffusion. The results achieved routinely in the growth of GaAs are reported. It is shown that double heterostructure laser diodes fabricated by metal-organic vapor phase epitaxy compete favorably with those grown so far by liquid phase epitaxy, including their degradation and reliability.

Performance of a GaAlAs laser diode stabilized on a hyperfine component of two-photon transitions in rubidium at 778 nm

NASA Astrophysics Data System (ADS)

Felder, Raymond; Touahri, D.; Acef, Ouali; Hilico, L.; Zondy, Jean-Jacques; Clairon, Andre; de Beauvoir, Beatrice; Biraben, Francois; Julien, Lucile; Nez, Francois; Millerioux, Yves P.

1995-04-01

The absolute frequency measurement of each hyperfine component of the 5S3/2 and 5S5/2 levels in rubidium was done at ENS more than one year ago using Ti-Sa lasers. We built two devices based on diode lasers to study some metrological properties. We measure the frequency differences between hyperfine components of the 5S5/2 level and we calculate the corresponding hyperfine constants. We also measure the frequency interval between the 5S3/2 and 5S5/2 levels using a Schottky diode. The measured stability in terms of Allan variance is 3*10-13t-1/2 up to 2000 s. The light shift is investigated and the difference between our two systems is 1.7 kHz. The repeatability of one system is better than 10-12 and will allow the absolute frequency measurement at this level via the LPTF frequency synthesis chain.

Gallium poisoning: a rare case report.

PubMed

Ivanoff, Chris S; Ivanoff, Athena E; Hottel, Timothy L

2012-02-01

The authors present a case of a college student who suffered acute gallium poisoning as a result of accidental exposure to gallium halide complexes. This is extremely rare and has never been reported in the literature. Acute symptoms after the incident, which initially presented as dermatitis and appeared relatively not life-threatening, rapidly progressed to dangerous episodes of tachycardia, tremors, dyspnea, vertigo, and unexpected black-outs. Had there been effective emergency medical care protocols, diagnostic testing, treatment and antidotes, the latent manifestations of irreversible cardiomyopathy may have been prevented. Given how quickly exposure led to morbidity, this article aims to raise an awareness of the toxic potential of gallium. This has particular relevance for workers involved in the production of semiconductors where there is a potential for accidental exposure to gallium by-products during device processing. It may also have implications for dentists who use gallium alloys to replace mercury containing amalgam. In the absence of threshold limit values and exposure limits for humans, as well as emergency medical guidelines for treatment of poisoning, the case calls on the National Institute for Occupational Safety and Health and the Occupational Safety and Health Administration to establish guidelines and medical management protocols specific for gallium. Copyright © 2011 Elsevier Ltd. All rights reserved.

Gallium-based anti-infectives: targeting microbial iron-uptake mechanisms.

PubMed

Kelson, Andrew B; Carnevali, Maia; Truong-Le, Vu

2013-10-01

Microbes have evolved elaborate iron-acquisition systems to sequester iron from the host environment using siderophores and heme uptake systems. Gallium(III) is structurally similar to iron(III), except that it cannot be reduced under physiological conditions, therefore gallium has the potential to serve as an iron analog, and thus an anti-microbial. Because Ga(III) can bind to virtually any complex that binds Fe(III), simple gallium salts as well as more complex siderophores and hemes are potential carriers to deliver Ga(III) to the microbes. These gallium complexes represent a new class of anti-infectives that is different in mechanism of action from conventional antibiotics. Simple gallium salts such as gallium nitrate, maltolate, and simple gallium siderophore complexes such as gallium citrate have shown good antibacterial activities. The most studied complex has been gallium citrate, which exhibits broad activity against many Gram negative bacteria at ∼1-5μg/ml MICs, strong biofilm activity, low drug resistance, and efficacy in vivo. Using the structural features of specific siderophore and heme made by pathogenic bacteria and fungi, researchers have begun to evaluate new gallium complexes to target key pathogens. This review will summarize potential iron-acquisition system targets and recent research on gallium-based anti-infectives. Copyright © 2013 Elsevier Ltd. All rights reserved.

Towards Resonant-State THz Laser Based on Strained p-Ge and SiGe QW Structures

DTIC Science & Technology

2006-07-01

used. The relaxed compositionally graded Si1-xGex/Si(001) buffer layer with low threading dislocations density have been grown by chemical vapour ...observe in absorption experiments. 5. Intracenter optical transitions between hydrogenic levels in doped silicon, germanium, and gallium arsenid [P...34, b. Critical magnetic field Hc vs valence band splitting Δ. Lines show the calculated Hc(Δ) dependence. 14. The gallium -doped Ge crystals with

Cuprous selenide and sulfide form improved photovoltaic barriers

NASA Technical Reports Server (NTRS)

1966-01-01

Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.

Activities of the Solid State Physics Research Institute

NASA Technical Reports Server (NTRS)

1985-01-01

Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

Correction: Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

PubMed

Sarkar, Sujoy; Sampath, S

2016-05-28

Correction for 'Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control' by Sujoy Sarkar et al., Chem. Commun., 2016, 52, 6407-6410.

Revised neutrino-gallium cross section and prospects of BEST in resolving the gallium anomaly

NASA Astrophysics Data System (ADS)

Barinov, Vladislav; Cleveland, Bruce; Gavrin, Vladimir; Gorbunov, Dmitry; Ibragimova, Tatiana

2018-04-01

O (1 )eV sterile neutrino can be responsible for a number of anomalous results of neutrino oscillation experiments. This hypothesis may be tested at short base line neutrino oscillation experiments, several of which are either ongoing or under construction. Here, we concentrate on the so-called gallium anomaly, found by SAGE and GALLEX experiments, and its foreseeable future tests with BEST experiment at Baksan Neutrino Observatory. We start with a revision of the neutrino-gallium cross section that is performed by utilizing the recent measurements of the nuclear final state spectra. We accordingly correct the parameters of gallium anomaly and refine the BEST prospects in testing it and searching for sterile neutrinos. We further evolve the previously proposed idea to investigate the anomaly with 65Zn artificial neutrino source as a next option available at BEST and estimate its sensitivity to the sterile neutrino model parameters following the Bayesian approach. We show that after the two stages of operation BEST will make 5 σ discovery of the sterile neutrinos, if they are behind the gallium anomaly.

A Study of the Influence of Low Intensity Laser Therapy on Painful Temporomandibular Disorder Patients

PubMed Central

Sattayut, S.; Bradley, P.

2012-01-01

A double-blind clinical trial was conducted on 30 female Temporomandibular Disorders (TMD) patients who had pain as a chief complaint. The patients were randomly allocated into three groups based on Low Intensity Laser (LILT) regimes namely 820 nm Gallium Aluminium Arsenide (GaAlAs) laser at energy densities of 21.4J/cm2, 107 J/cm2 and placebo laser. Each patient had three LILT treatments in a week. The pressure pain threshold (PPT) of trigger points in masticatory muscles, unassisted maximum mouth opening without pain (MOSP) and symptom severity index (SSI) were recorded as baseline data and monitored after every treatment. Jaw kinesiology, electromyography (EMG) and pain rating index from McGill pain questionnaire were also recorded as baseline and final results. The analysis of covariance and further analysis showed that the higher energy density laser group had significant increases in PPT and EMG amplitude recorded from voluntary clenching (cEMG) compared with the placebo group at P values 0.0001 and 0.022 respectively. A significantly greater number of patients recovered from myofascial pain and TMJ arthralgia as assessed clinically in the higher energy group compared with the placebo (P value = 0.02 and 0.006 respectively). There was no statistically significant difference in the other parameters of assessment among the groups at a P value 0.05. At a period of 2 to 4 weeks review after LILT, there was an average 52% reduction of pain as assessed by SSI. PMID:24511188

Serum and tissue concentrations of gallium after oral administration of gallium nitrate and gallium maltolate to neonatal calves.

PubMed

Monk, Caroline S; Sweeney, Raymond W; Bernstein, Lawrence R; Fecteau, Marie-Eve

2016-02-01

To determine serum and tissue concentrations of gallium (Ga) after oral administration of gallium nitrate (GaN) and gallium maltolate (GaM) to neonatal calves. 8 healthy neonatal calves. Calves were assigned to 1 of 2 groups (4 calves/group). Gallium (50 mg/kg) was administered as GaN or GaM (equivalent to 13.15 mg of Ga/kg for GaN and 7.85 mg of Ga/kg for GaM) by oral gavage once daily for 5 days. Blood samples were collected 0, 0.25, 0.5, 1, 2, 4, 8, 12, and 24 hours after Ga administration on day 1; 4 and 24 hours after Ga administration on days 2, 3, and 4; and 4, 12, and 24 hours after Ga administration on day 5. On day 6, calves were euthanized and tissue samples were obtained. Serum and tissue Ga concentrations were measured by use of mass spectrometry. Data were adjusted for total Ga dose, and comparisons were made between the 2 groups. Calves receiving GaM had a significantly higher dose-adjusted area under the curve and dose-adjusted maximum serum Ga concentration than did calves receiving GaN. Despite receiving less Ga per dose, calves receiving GaM had tissue Ga concentrations similar to those for calves receiving GaN. In this study, calves receiving GaM had significantly higher Ga absorption than did calves receiving GaN. These findings suggested that GaM might be useful as a prophylactic agent against Mycobacterium avium subsp paratuberculosis infection in neonatal calves.

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

NASA Astrophysics Data System (ADS)

Sammak, Amir; Qi, Lin; Nanver, Lis K.

2015-12-01

The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

Structure of dental gallium alloys.

PubMed

Herø, H; Simensen, C J; Jørgensen, R B

1996-07-01

The interest in gallium alloys as a replacement for amalgam has increased in recent years due to the risk of environmental pollution from amalgam. Alloy powders with compositions close to those for alloys of amalgam are mixed with a liquid gallium alloy. The mix is condensed into a prepared cavity in much the same way as for amalgam. The aim of the present work was to study the structure of: (1) two commercial alloy powders containing mainly silver, tin and copper, and (2) the phases formed by mixing these powders with a liquid alloy of gallium, indium and tin. One of the alloy powders contained 9 wt% palladium. Cross-sections of cylindrical specimens made by these gallium mixes were investigated by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. Discrete grains of the following phases were found to be present in both gallium alloys: hexagonal Ag2Ga, tetragonal Cu(Pd)Ga2, cubic Ag9In4 and tetragonal beta-Sn. Indications of hexagonal or orthorhombic Ag2Sn were found in the remaining, unreacted alloy particles. In the palladium-containing alloy the X-ray reflections indicate a minor fraction of cubic Cu9Ga4 in addition to the Cu(Pd)Ga2 phase. Particles of beta-Sn are probably precipitated because Sn-Ga phases cannot be formed according to the binary phase diagram.

The Incorporation of Lithium Alloying Metals into Carbon Matrices for Lithium Ion Battery Anodes

NASA Astrophysics Data System (ADS)

Hays, Kevin A.

An increased interest in renewable energies and alternative fuels has led to recognition of the necessity of wide scale adoption of the electric vehicle. Automotive manufacturers have striven to produce an electric vehicle that can match the range of their petroleum-fueled counterparts. However, the state-of-the-art lithium ion batteries used to power the current offerings still do not come close to the necessary energy density. The energy and power densities of the lithium ion batteries must be increased significantly if they are going to make electric vehicles a viable option. The chemistry of the lithium ion battery, based on lithium cobalt oxide cathodes and graphite anodes, is limited by the amount of lithium the cathode can provide and the anode will accept. While these materials have proven themselves in portable electronics over the past two decades, plausible higher energy alternatives do exist. The focus is of this study is on anode materials that could achieve a capacity of more than 3 times greater than that of graphite anodes. The lithium alloying anode materials investigated and reported herein include tin, arsenic, and gallium arsenide. These metals were synthesized with nanoscale dimensions, improving their electrochemical and mechanical properties. Each exhibits their own benefits and challenges, but all display opportunities for incorporation in lithium ion batteries. Tin is incorporated in multilayer graphene nanoshells by introducing small amounts of metal in the core and, separately, on the outside of these spheres. Electrolyte decomposition on the anode limits cycle life of the tin cores, however, tin vii oxides introduced outside of the multilayer graphene nanoshells have greatly improved long term battery performance. Arsenic is a lithium alloying metal that has largely been ignored by the research community to date. One of the first long term battery performance tests of arsenic is reported in this thesis. Anodes were made from nanoscale

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Gallium and its competing roles with iron in biological systems.

PubMed

Chitambar, Christopher R

2016-08-01

Gallium, a group IIIa metal, shares chemical properties with iron. Studies have shown that gallium-based compounds have potential therapeutic activity against certain cancers and infectious microorganisms. By functioning as an iron mimetic, gallium perturbs iron-dependent proliferation processes in tumor cells. Gallium's action on iron homeostasis leads to disruption of ribonucleotide reductase, mitochondrial function, and the regulation of transferrin receptor and ferritin. In addition, gallium nitrate stimulates an increase in mitochondrial reactive oxygen species in cells which triggers downstream upregulation of metallothionein and hemoxygenase-1. Gallium's anti-infective activity against bacteria and fungi results from disruption of microbial iron utilization through mechanisms which include gallium binding to siderophores and downregulation of bacterial iron uptake. Gallium compounds lack cross-resistance to conventional chemotherapeutic drugs and antibiotics thus making them attractive agents for drug development. This review will focus on the mechanisms of action of gallium with emphasis on its interaction with iron and iron proteins. Copyright © 2016 Elsevier B.V. All rights reserved.

Group 13 β-ketoiminate compounds: gallium hydride derivatives as molecular precursors to thin films of Ga2O3.

PubMed

Pugh, David; Marchand, Peter; Parkin, Ivan P; Carmalt, Claire J

2012-06-04

Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)═O}(2)] (L(1)H(2), R = (CH(2))(2); L(2)H(2), R = (CH(2))(3)), linked by ethylene (L(1)) and propylene (L(2)) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L(1))Cl] (3), [Ga(L(n))Cl] (4, n = 1; 6, n = 2) and [In(L(n))Cl] (5, n = 1; 7, n = 2). Ligand L(1) has also been used to form a gallium hydride derivative [Ga(L(1))H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me(2)N(CH(2))(3)N(H)C(R')-CHC(R')═O] (L(3)H, R' = Me; L(4)H, R' = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L(3))Me(2)] (9) and [In(L(3))Me(2)] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L(n))H(2)] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L(1))H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga(2)O(3). The films were analyzed by powder XRD, SEM, and EDX.

Preventing Supercooling Of Gallium

NASA Technical Reports Server (NTRS)

Massucco, Arthur A.; Wenghoefer, Hans M.; Wilkins, Ronnie

1994-01-01

Principle of heterogeneous nucleation exploited to prevent gallium from supercooling, enabling its use as heat-storage material that crystallizes reproducibly at its freezing or melting temperature of 29 to 30 degrees C. In original intended application, gallium used as heat-storage material in gloves of space suits. Terrestrial application lies in preparation of freezing-temperature reference samples for laboratories. Principle of heterogeneous nucleation also exploited similarly in heat pipes filled with sodium.

Repurposing of gallium-based drugs for antibacterial therapy.

PubMed

Bonchi, Carlo; Imperi, Francesco; Minandri, Fabrizia; Visca, Paolo; Frangipani, Emanuela

2014-01-01

While the occurrence and spread of antibiotic resistance in bacterial pathogens is vanishing current anti-infective therapies, the antibiotic discovery pipeline is drying up. In the last years, the repurposing of existing drugs for new clinical applications has become a major research area in drug discovery, also in the field of anti-infectives. This review discusses the potential of repurposing previously approved gallium formulations in antibacterial chemotherapy. Gallium has no proven function in biological systems, but it can act as an iron-mimetic in both prokaryotic and eukaryotic cells. The activity of gallium mostly relies on its ability to replace iron in redox enzymes, thus impairing their function and ultimately hampering cell growth. Cancer cells and bacteria are preferential gallium targets due to their active metabolism and fast growth. The wealth of knowledge on the pharmacological properties of gallium has opened the door to the repurposing of gallium-based drugs for the treatment of infections sustained by antibiotic-resistant bacterial pathogens, such as Acinetobacter baumannii or Pseudomonas aeruginosa, and for suppression of Mycobacterium tuberculosis growth. The promising antibacterial activity of gallium both in vitro and in different animal models of infection raises the hope that gallium will confirm its efficacy in clinical trials, and will become a valuable therapeutic option to cure otherwise untreatable bacterial infections. © 2014 International Union of Biochemistry and Molecular Biology.

NIM Realization of the Gallium Triple Point

NASA Astrophysics Data System (ADS)

Xiaoke, Yan; Ping, Qiu; Yuning, Duan; Yongmei, Qu

2003-09-01

In the last three years (1999 to 2001), the gallium triple-point cell has been successfully developed, and much corresponding research has been carried out at the National Institute of Metrology (NIM), Beijing, China. This paper presents the cell design, apparatus and procedure for realizing the gallium triple point, and presents studies on the different freezing methods. The reproducibility is 0.03 mK, and the expanded uncertainty of realization of the gallium triple point is evaluated to be 0.17 mK (p=0.99, k=2.9). Also, the reproducibility of the gallium triple point was compared with that of the triple point of water.

Niobium-bearing arsenides and germanides from elemental mixtures not involving niobium: a new twist to an old problem in solid-state synthesis.

PubMed

Baranets, Sviatoslav; He, Hua; Bobev, Svilen

2018-05-01

Three isostructural transition-metal arsenides and germanides, namely niobium nickel arsenide, Nb 0.92(1) NiAs, niobium cobalt arsenide, NbCoAs, and niobium nickel germanide, NbNiGe, were obtained as inadvertent side products of high-temperature reactions in sealed niobium containers. In addition to reporting for the very first time the structures of the title compounds, refined from single-crystal X-ray diffraction data, this article also serves as a reminder that niobium containers may not be suitable for the synthesis of ternary arsenides and germanides by traditional high-temperature reactions. Synthetic work involving alkali or alkaline-earth metals, transition or early post-transition metals, and elements from groups 14 or 15 under such conditions may yield Nb-containing products, which at times could be the major products of such reactions.

MBE growth of nitride-arsenides for long wavelength opto-electronics

NASA Astrophysics Data System (ADS)

Spruytte, Sylvia Gabrielle

2001-07-01

Until recently, the operating wavelength of opto-electronic devices on GaAs has been limited to below 1 mum due to the lack of III-V materials with close lattice match to GaAs that have a bandgap below 1.24 eV. To enable devices operating at 1.3 mum on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of group III-nitride-arsenides (GaInNAs) is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. Nitride-arsenide materials are grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma source. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen are determined using the emission spectrum of the plasma. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. It is shown that the group III growth rate controls the nitrogen concentration in the film. Absorption measurements allow the establishment of a range of GaInNAs alloys yielding 1.3 mum emission. The optical properties of GaInNAs and GaNAs quantum wells (QWs) are investigated with photoluminescence (PL) measurements. The peak PL intensity increases and peak wavelength shifts to shorter wavelengths when annealing. The increase in luminescence efficiency results from a decrease in non-radiative recombination centers. As the impurity concentration in the GaInNAs films is low, crystal defects associated with nitrogen incorporation were investigated and improvements in crystal quality after anneal were observed. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen

Selenium bond decreases ON resistance of light-activated switch

NASA Technical Reports Server (NTRS)

1965-01-01

Vitrified amorphous selenium bond decreases the ON resistance of a gallium arsenide-silicon light-activated, low-level switch. The switch is used under a pulse condition to prolong switch life and minimize errors due to heating, devitrification, and overdrawing.

40 CFR 469.27 - New source performance standards (NSPS).

Code of Federal Regulations, 2011 CFR

2011-07-01

... Limitations Pollutant or pollutant property Maximum for any 1 day Average of daily values for 30 consecutive... manufacturers of gallium or indium arsenide crystals. 4 Within the range of 6.0 to 9.0. [48 FR 15394, Apr. 8...

The surface tension of liquid gallium

NASA Technical Reports Server (NTRS)

Hardy, S. C.

1985-01-01

The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

Deep Impurity States in Gallium Arsenide.

DTIC Science & Technology

1981-10-01

that the wave functions of the so-called slal- is a result of a delicate cancellation process in low impurities can be thought of as a product of an...approximation we can still form- along these lines has been performed for a transi- ally write the impurity wave function as a product tion from the two...be formally written as a known Lucovsky formula. 20 Had we assumed, as product of two terms, one representing the nodal did Lucovsky, that the

Gallium Arsenide and Related Compounds, 1986.

DTIC Science & Technology

1986-01-01

AFMRI.1U8 d7 -18 6o 60AM F PERORMING ORGANIZATIN ,1b OFICE SYMBOL. 7a. NAME OF MONITORING ORGANIZATION Of appkiie) Unvriyof Illinois AFOSRINE 6C...effect is shown in the log I vs. V characteristics in figure 5. Both devices exhibit good logarithmic behaviour , but it is clear that the ideality of the...effects at the surface. As also shown in Fig. 5, a 200 nm thick n-doped ion implanted and activated layer shows a "mixed" behaviour , namely a linear

Monolithic Gallium Arsenide Superheterodyne Front End.

DTIC Science & Technology

1982-06-01

which also provides a con - venient heat sink (not of primary importance in this application due to the low power dissipation of the monolithic...components utilized in the receiver front end). The thickness of the GaAs is then selected as a compromise between con - flicting requirements. A thick...International ERC41014.2FR 2.4 Analysis and Design for Low Noise The design of monolithic amplifiers for low noise must take into con - sideration active

Net Photorefractive Gain In Gallium Arsenide

NASA Technical Reports Server (NTRS)

Liu, Tsuen-Hsi; Cheng, Li-Jen

1990-01-01

Prerequisite includes applied electric field. Electric field applied to GaAs crystal in which two infrared beams interfere. Depending on quality of sample and experimental conditions, net photorefractive gain obtained. Results offer possibility of new developments in real-time optical processing of signals by use of near-infrared lasers of low power.

Indium gallium arsenide microwave power transistors

NASA Technical Reports Server (NTRS)

Johnson, Gregory A.; Kapoor, Vik J.; Shokrani, Mohsen; Messick, Louis J.; Nguyen, Richard

1991-01-01

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

Ion implantation of indium gallium arsenide

NASA Astrophysics Data System (ADS)

Almonte, Marlene Isabel

The ternary compound In0.53Ga0.47As, lattice-matched to Inp, is a semiconductor alloy of technological importance for numerous electronic and optoelectronic device applications. One of these applications includes photodiodes to be developed for the 1.3--1.55 mum wavelength range where silica fibers have their lowest optical loss. With a rapid increase in its use there is an essential need to understand the effects of ion implantation of this alloy semiconductor for implant isolation purposes in which highly resistive layers are required. Due to the small band gap (0.75 eV at 300K) of In0.53Ga0.47As, the estimated maximum resistivity is of the order of 1000 O-cm. Implant isolation can be achieved by the implantation of either inert noble gas ions or electrically active ions. Ion bombardment with inert species introduces defects which trap charge carriers. In the case of implant isolation by electrically active ions, the implanted impurities form an electronic level located close to the middle of the bandgap. Studies of the effects of implantation in In0.53Ga0.47 As due to damage by implantation of Ne+ ions and to compensation by implantation of Fe+ ions are reported in this thesis. The former only involves lattice damage related effects while the latter leads to damage and dopant induced compensation. From the Ne+ implantation results it appears that the damage related energy levels in In0.53 Ga0.47M produced by ion bombardment of chemically inactive species, are not sufficiently deep to lead to effective isolation. A higher resistivity of the order of 770 O-cm is achieved with Fe+ implantation, indicating that Fe introduces an energy level deep in the bandgap. The changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). SIMS analysis shows Fe out-diffusion which results in the loss of the semi-insulating electrical characteristics. To further our understanding of Fe diffusion in In0.53Ga0.47As, the diffusion coefficient of Fe is measured for the first time. The diffusivity of Fe was measured to be 4 x 10-13 cm2 s-1 at 550°C. The thermal stability of these damage and compensation induced effects producing implant isolation is discussed in detail.

Clinical and histological evaluation of laser therapy in the treatment of oral mucositis in an animal model

NASA Astrophysics Data System (ADS)

Vitória, L. A.; Machado, R. M.; Oliveira, C. R. B.; Rodriguez, T. T.; Cangussu, M. C. T.; Mathias, C. C.; Ramalho, L. M. P.

2018-04-01

Oral mucositis (MO) is considered to be the most severe stomatologic complication associated with antineoplastic treatment, which may lead to its interruption. Several current clinical protocols have aproven the benefits of Laser Photobiomodulation (LP) in the prevention and control of MO, due to its analgesic and anti-inflammatory effects and its stimulation of mesenchymal cells proliferation. The objective of this study was to evaluate the action of laser in initial events of chemo-induced MO. Eight Hamsters were divided into 2 groups (G): GI positive control (induction of MO) and GII Laser (induction of MO + Laser therapy). MO was induced by two injections of 5-Fluorouracil followed by grooves in the mucosa of the cheek pouch. The PL (Diode Laser of Gallium and Aluminum Arsenide, λ660nm, 40mW, 2,4J/cm2 ) was performed on day 0 of the experiment and every 48 hours until day 6. On day 7 the mucosa was photographed for clinical analysis according to Lima et al., 2005 and the animals were killed, for bag removal and histological processing for Hematoxylin and Eosin (H / E) staining. After statistical analysis (Fischer's Exact) with a significance level 0.5%, it was concluded that the LP, according to the adopted protocol, was able to prevent MO, and most hamsters showed no visible clinical changes in the cheek pouch. Histologically, it was observed that LP reduced angiogenesis and recruitment of inflammatory cells in G2. According to the results obtained LP was effective in preventing and reducing the severity of oral mucositis.

Evaluation of phototherapy in the differentiation of mesenchymal stem cells in the tissue repair of rats submitted to a hyperlipidemic diet

NASA Astrophysics Data System (ADS)

Oliveira, C. R. B.; Santos, L. S.; Silva, V. D. U.; Vitória, L. A.; Rodriguez, T. T.; Marques, A. M. C.; Xavier, F. C. A.; Ramalho, L.

2018-04-01

Obese people present a greater risk of developing other systemic diseases and comorbidities such as compromising the tissue repair process. Laser phototherapy can contribute to this repair by improving cellular functions, since stem cells may play an important role in repair due to their pluripotent potential. In this way, the influence of Laser Phototherapy (LP) was evaluated in the tissue repair of rats submitted to a hyperlipid diet through CD49 immunostaining for adipose stem cells. Forty-eight Wistar albinus rats were divided into two experimental groups: Standard Diet (SD) and Hyperlipid Diet (HD) for 20 weeks. After this period, excisional dorsal cutaneous wounds of 1 cm2 were made. The groups were subdivided into control and laser, the laser groups were irradiated (Diode Laser of Gallium and Aluminum Arsenide, λ660nm, 40mW, 6J / cm2) immediately after the surgery and every 48 hours. A group of rats were killed on day 7 and the other group on day 14 and the specimens processed by the immunohistochemical technique. The SD group presented antibodies marked with moderate to intense intensity, whereas in the HD group the weak staining for the time of 14 days prevailed. The irradiation protocol employed had no influence on the CD49 marker when compared to the control and irradiated groups over the same period. According to the methodology used and the results obtained it is concluded that laser light does not influence the recruitment of adipoderivative stem cells for the tissue repair process.

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

Laser therapy may be better than topical desensitizing agents for treating dentin hypersensitivity.

PubMed

Blatz, Markus B

2012-09-01

to 6 months. Most studies used Visual Analog Scale scores or other subjective tools to assess sensitivity. All 8 studies compared one kind of laser versus one kind of topical desensitizingagent. However, types of lasers as well as types of desensitizing agents differed among the reviewed studies. Half of the studies compared gallium-aluminum-arsenide (GaAlAs) lasers with various topical desensitizing agents; however, findings were conflicting. Two moderate-quality trials indicated that GaAlAs laser and the control desensitizing agents preformed similarly. Another moderate-quality trial demonstrated that the application of a bonding agent was significantly better than a GaAlAs laser in the reduction of hypersensitivity. The only reviewed study that was classified as an A-level study revealed a significantly greater immediate and long-term desensitizing effect than the control. The remaining studies involved Nd:YAG, Er:YAG, and CO(2) lasers, all of them reporting a slightly greater decrease in sensitivity as compared with topical desensitizing agents. Five of 8s tudies reported on the safety of laser application and did not find any detrimental pulpal effects, allergic reactions, or clinically detectable complications during follow-up. The authors concluded that the results obtained from the 8 studies included in this systematic review were conflicting but indicated a slight clinical advantage of laser therapy over topical medicaments in the treatment of dentin hypersensitivity. It was further concluded that application of lasers under controlled parameters for this indication may not lead to adverse effects. Copyright © 2012. Published by Mosby, Inc. All rights reserved.

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

Automated realization of the gallium melting and triple points

NASA Astrophysics Data System (ADS)

Yan, X.; Duan, Y.; Zhang, J. T.; Wang, W.

2013-09-01

In order to improve the automation and convenience of the process involved in realizing the gallium fixed points, an automated apparatus, based on thermoelectric and heat pipe technologies, was designed and developed. This paper describes the apparatus design and procedures for freezing gallium mantles and realizing gallium melting and triple points. Also, investigations on the melting behavior of a gallium melting point cell and of gallium triple point cells were carried out while controlling the temperature outside the gallium point cells at 30 °C, 30.5 °C, 31 °C, and 31.5 °C. The obtained melting plateau curves show dentate temperature oscillations on the melting plateaus for the gallium point cells when thermal couplings occurred between the outer and inner liquid-solid interfaces. The maximum amplitude of the temperature fluctuations was about 1.5 mK. Therefore, the temperature oscillations can be used to indicate the ending of the equilibrium phase transitions. The duration and amplitude of such temperature oscillations depend on the temperature difference between the setting temperature and the gallium point temperature; the smaller the temperature difference, the longer the duration of both the melting plateaus and the temperature fluctuations.

Electric dipole (hyper)polarizabilities of selected X2Y2 and X3Y3 (X = Al, Ga, In and Y = P, As): III-V semiconductor clusters. An ab initio comparative study.

PubMed

Karamanis, Panaghiotis; Pouchan, Claude; Leszczynski, Jerzy

2008-12-25

A systematic ab initio comparative study of the (hyper)polarizabilities of selected III-V stoichiometric semiconductor clusters has been carried out. Our investigation focuses on the ground state structures of the dimers and on two dissimilar trimer configurations of aluminum, gallium, indium phosphide and arsenide. The basis set effect on both the polarizabilities and hyperpolarizabilities of the studied systems has been explicitly taken into account relying on the augmented correlation consistent aug-cc-pVnZ (n = D, T, Q, and 5) basis sets series. In addition, a rough estimation of the effects of the relativistic effects on the investigated properties is provided by extension of the study to include calculations performed with relativistic electron core potentials (or pseudopotentials). Electron correlation effects have been estimated utilizing methods of increasing predictive reliability, e.g., the Møller-Plesset many body perturbation theory and the couple cluster approach. Our results reveal that in the considered semiconductor species the Group III elements (Al, Ga, In) play a vital role on the values of their relative (hyper)polarizability. At all levels of theory employed the most hyperpolarizable clusters are the indium derivatives while the aluminum arsenide clusters also exhibit high, comparable hyperpolarizabilities. The less hyperpolarizable species are those composed of gallium and this is associated with the strong influence of the nuclear charge on the valence electrons of Ga due to the poor shielding that is provided by the semicore d electrons. In addition, the analysis of the electronic structure and the hyperpolarizability magnitudes reveals that clusters, in which their bonding is characterized by strong electron transfer from the electropositive to the electronegative atoms, are less hyperpolarizable than species in which the corresponding electron transfer is weaker. Lastly, from the methodological point of view our results point out that

Gallium-mediated growth of multiwall carbon nanotubes

NASA Astrophysics Data System (ADS)

Pan, Zheng Wei; Dai, Sheng; Beach, David B.; Evans, Neal D.; Lowndes, Douglas H.

2003-03-01

Liquid gallium was used as a viable and effective solvent and template for high-yield growth of multiwall carbon nanotubes. The gallium-mediated nanotubes thus obtained differ morphologically from nanotubes obtained by using transition metals as catalysts. The nanotubes have a pin-like morphology, generally composed of an oval-shaped tip filled with liquid gallium and a tapered hollow body. The inner diameter of the tube is so large that the inner/outer diameter ratio is usually larger than 0.9. The tubes are naturally opened at both ends. These gallium-filled nanotubes may be used as a nanothermometer in the temperature range of 30 to 550 °C. This study opens an interesting route for carbon nanotube synthesis.

Radiochemical separation of gallium by amalgam exchange

USGS Publications Warehouse

Ruch, R.R.

1969-01-01

An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

Optical Refrigeration

DTIC Science & Technology

2007-12-01

confined to either glasses and crystals doped with rare-earth (RE) elements or direct-bandgap semiconductors such as gallium arsenide. Although laser...condition. Highly controlled epitaxial growth techniques, such as metal–organic chemical vapour deposition (MOCVD) can produce very low surface

Shock wave experiments on gallium

NASA Astrophysics Data System (ADS)

Jensen, Brian; Branch, Brittany; Cherne, Frank

2017-06-01

Gallium exhibits a complex phase diagram with multiple solid phases, an anomalous melt boundary, and a low-temperature melt transition making it a suitable material for shock wave studies focused on multiphase properties including kinetics and strength. Apart from high-pressure shock wave data that exists for the liquid phase, there is a clear lack of data in the low-pressure regime where much of the complexity in the phase diagram exists. In this work, a series of shock wave experiments were performed to begin examining the low-pressure region of the phase diagram. Additional data on a gallium alloy, which remains liquid at room temperature, will be presented and compared to data available for pure gallium (LA-UR-17-21449).

Lattice parameters guide superconductivity in iron-arsenides

NASA Astrophysics Data System (ADS)

Konzen, Lance M. N.; Sefat, Athena S.

2017-03-01

The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

Lattice parameters guide superconductivity in iron-arsenides.

PubMed

Konzen, Lance M N; Sefat, Athena S

2017-03-01

The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped 'parent' materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which 'dopants' can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce 'in-plane' superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Antibacterial effect of gallium and silver on Pseudomonas aeruginosa treated with gallium-silver-phosphate-based glasses.

PubMed

Valappil, Sabeel P; Higham, Susan M

2014-01-01

Gallium and silver incorporated phosphate-based glasses were evaluated for antibacterial effect on the growth of Pseudomonas aeruginosa, which is a leading cause of opportunistic infections. The glasses were produced by conventional melt quenching methods at 1100°C for 1 h. Glass degradation studies were conducted by weight loss method. Disc diffusion assay and cell viability assay displayed statistically significant (p ≤ 0.0005) effect on P. aeruginosa growth which increased with decreasing calcium content in the glasses. The gallium ion release rates (1.83, 0.69 and 0.48 ppm·h(-1)) and silver ion release rates (2.97, 2.84 and 2.47 ppm·h(-1)) were found to account for this variation. Constant depth film fermentor was used to evaluate the anti-biofilm properties of the glasses. Both gallium and silver in the glass contributed to biofilm growth inhibitory effect on P. aeruginosa (up to 2.68 reduction in log 10 values of the viable counts compared with controls). The glasses were found to deliver gallium and silver in a controlled way and exerted cumulative antibacterial action on planktonic and biofilm growth of P. aeruginosa. The antibacterial, especially anti-biofilm, properties of the gallium and silver incorporated phosphate-based glasses make them a potential candidate to combat infections caused by P. aeruginosa.

Development of laser diode otolaryngological intracavity procedures and its clinical practice

NASA Astrophysics Data System (ADS)

Wang, Qingguo; Mao, Haitao; Bu, Hongjian; Dong, Xingfa; Li, Jikai; Li, Fangzheng; Zhang, Wenqing

1998-08-01

Because laser is diffusely reflected by the skin as well as scattered and absorbed by the subcutaneous tissue, the lasing intensity which enters into the tissue through the skin is exponentially attenuated with the increase in the depth. Therefore, when the medium-small energy laser is transmitted to the tissue depth through the skin, the lasing intensity is quite finite. However, a lot of diseases occur in the crooked and narrow tube, sinus or deep tissue, for these diseases, it is difficult to get the curative effect by normal laser radiation. As above, we have developed an otolaryngological intracavity therapeutic apparatus of laser diode. Visible GaAlAs laser diode is adopted on this apparatus, its lasing wavelength is 670 nm. The lasing beam is guided into the crooked and narrow tube, sinus or deep tissue, which passes through the optical fiber and the laser pins of different forms and sizes (such as straight, curved and sidelight etc.). Using the fiber-optic connector the laser pins can be changed conveniently. The lasing output power of laser pin can be adjusted from 0 to 20 mW. The lasing intensity may be modulated which changes the rectangular wave form 0 to 1 kHz. Five hundred patients were suffering from 35 kind of otolaryngological diseases were treated in the period of clinical test. The rate of efficiency (cure or improvement) is 89%. Nobody had the side effect or deteriorated. This apparatus has the best curative effect on the inflammation of the mucosa and shallow tissue, such as auris media dropsy, maxillary sinus inflammation, auris external inflammation, chronic laryngitis, otitis media, tinnitus, vertigo, and so on.

Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

PubMed Central

Kim, Tae-Hee; Choi, Sooseok; Park, Dong-Wha

2016-01-01

Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing. PMID:28344295

Investigation of significantly high barrier height in Cu/GaN Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R.

2016-01-15

Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantlymore » higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.« less

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Nonlinear behaviour of reflectivity of gallium - Silica interface & its applications

NASA Astrophysics Data System (ADS)

Naruka, Preeti; Bissa, Shivangi

2018-05-01

In this paper Optical properties and nonlinear behaviour of Gallium-Silica Interface is studied. Change in reflectivity of gallium film is explained as a function of thickness of metallic layer and intensity of incident light by using non-thermal mechanism. Here variation of dielectric constant of gallium with temperature is also explained on considering Binary nanoshell model of gallium nanoparticles of spherical shape. In the present paper application of structural phase transformation of gallium is explained as a Grating assisted coupler.

Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs (POSTPRINT)

DTIC Science & Technology

2014-10-01

identifying and understanding the failure mechanisms that limit the safe operating area of GaN HEMTs. 15. SUBJECT TERMS aluminum gallium nitride... gallium nitride, HEMTs, semiconductor device reliability, transistors 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER...area of GaN HEMTs. Index Terms— Aluminum gallium nitride, gallium nitride, HEMTs, semiconductor device reliability, transistors. I. INTRODUCTION A

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

NASA Technical Reports Server (NTRS)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

PubMed

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-26

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

Nanobonding: A key technology for emerging applications in health and environmental sciences

NASA Astrophysics Data System (ADS)

Howlader, Matiar M. R.; Deen, M. Jamal; Suga, Tadatomo

2015-03-01

In this paper, surface-activation-based nanobonding technology and its applications are described. This bonding technology allows for the integration of electronic, photonic, fluidic and mechanical components into small form-factor systems for emerging sensing and imaging applications in health and environmental sciences. Here, we describe four different nanobonding techniques that have been used for the integration of various substrates — silicon, gallium arsenide, glass, and gold. We use these substrates to create electronic (silicon), photonic (silicon and gallium arsenide), microelectromechanical (glass and silicon), and fluidic (silicon and glass) components for biosensing and bioimaging systems being developed. Our nanobonding technologies provide void-free, strong, and nanometer scale bonding at room temperature or at low temperatures (<200 °C), and do not require chemicals, adhesives, or high external pressure. The interfaces of the nanobonded materials in ultra-high vacuum and in air correspond to covalent bonds, and hydrogen or hydroxyl bonds, respectively.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W.; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-01

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

Imaging of nonlocal hot-electron energy dissipation via shot noise.

PubMed

Weng, Qianchun; Komiyama, Susumu; Yang, Le; An, Zhenghua; Chen, Pingping; Biehs, Svend-Age; Kajihara, Yusuke; Lu, Wei

2018-05-18

In modern microelectronic devices, hot electrons accelerate, scatter, and dissipate energy in nanoscale dimensions. Despite recent progress in nanothermometry, direct real-space mapping of hot-electron energy dissipation is challenging because existing techniques are restricted to probing the lattice rather than the electrons. We realize electronic nanothermometry by measuring local current fluctuations, or shot noise, associated with ultrafast hot-electron kinetic processes (~21 terahertz). Exploiting a scanning and contact-free tungsten tip as a local noise probe, we directly visualize hot-electron distributions before their thermal equilibration with the host gallium arsenide/aluminium gallium arsenide crystal lattice. With nanoconstriction devices, we reveal unexpected nonlocal energy dissipation at room temperature, which is reminiscent of ballistic transport of low-temperature quantum conductors. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Properties of GaAs:Cr-based Timepix detectors

NASA Astrophysics Data System (ADS)

Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

2018-02-01

The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

Gallium nitrate ameliorates type II collagen-induced arthritis in mice.

PubMed

Choi, Jae-Hyeog; Lee, Jong-Hwan; Roh, Kug-Hwan; Seo, Su-Kil; Choi, Il-Whan; Park, Sae-Gwang; Lim, Jun-Goo; Lee, Won-Jin; Kim, Myoung-Hun; Cho, Kwang-rae; Kim, Young-Jae

2014-05-01

Rheumatoid arthritis (RA) is a chronic autoimmune inflammatory disease. Gallium nitrate has been reported to reserve immunosuppressive activities. Therefore, we assessed the therapeutic effects of gallium nitrate in the mouse model of developed type II collagen-induced arthritis (CIA). CIA was induced by bovine type II collagen with Complete Freund's adjuvant. CIA mice were intraperitoneally treated from day 36 to day 49 after immunization with 3.5mg/kg/day, 7mg/kg/day gallium nitrate or vehicle. Gallium nitrate ameliorated the progression of mice with CIA. The clinical symptoms of collagen-induced arthritis did not progress after treatment with gallium nitrate. Gallium nitrate inhibited the increase of CD4(+) T cell populations (p<0.05) and also inhibited the type II collagen-specific IgG2a-isotype autoantibodies (p<0.05). Gallium nitrate reduced the serum levels of TNF-α, IL-6 and IFN-γ (p<0.05) and the mRNA expression levels of these cytokine and MMPs (MMP2 and MMP9) in joint tissues. Western blotting of members of the NF-κB signaling pathway revealed that gallium nitrate inhibits the activation of NF-κB by blocking IκB degradation. These data suggest that gallium nitrate is a potential therapeutic agent for autoimmune inflammatory arthritis through its inhibition of the NF-κB pathway, and these results may help to elucidate gallium nitrate-mediated mechanisms of immunosuppression in patients with RA. Copyright © 2014 Elsevier B.V. All rights reserved.

Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

NASA Technical Reports Server (NTRS)

Chu, T. L.

1975-01-01

The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

Gas Source Molecular Beam Epitaxial Growth of GaN

DTIC Science & Technology

1992-11-25

identify by block number) FIELW GROUP SUB-GROUP 19. ABSTRACT (Continue on reverse if necessary and Identify by block number) Aluminum gallium nitride (AlGaN...AND TASK OBJECTIVES Aluminum gallium nitride (AIGaN) has long been recognized as a promising radiation hard optoelectronic material. AIGaN has a wide...Efficient, pure, low temperature sources for the gas source molecular beam epitaxial (GSMBE) growth of aluminum gallium nitride will essentially

Electrical characteristics of pentacene-based Schottky diodes

NASA Astrophysics Data System (ADS)

Lee, Y. S.; Park, J. H.; Choi, J. S.

2003-01-01

The current-voltage ( I-V), capacitance-frequency ( C-f), and capacitance-voltage ( C-V) characteristics of organic diodes with a pentacene/aluminum Sckottky contact have been investigated. From the measured diode capacitances, it is revealed that the frequency-dependent properties are related to the localized traps in the band gap of pentacene. The C-V characteristics for different test frequencies are presented. In the low frequency region, the capacitance is nearly constant with reverse bias and increase with the forward bias. With even higher forward bias, the capacitance gradually decreases, which is due to the detrapping of the trapped charges. The intrinsic charge carrier concentration in pentacene was extracted as 3.1×10 17 cm -3 from the C-V characteristics. The C-V properties of the pentacene-based metal-oxide-semiconductor structure have also studied.

Preparing nano-hole arrays by using porous anodic aluminum oxide nano-structural masks for the enhanced emission from InGaN/GaN blue light-emitting diodes

NASA Astrophysics Data System (ADS)

Nguyen, Hoang-Duy; Nguyen, Hieu Pham Trung; Lee, Jae-jin; Mho, Sun-Il

2012-12-01

We report on the achievement of the enhanced cathodoluminescence (CL) from InGaN/GaN light-emitting diodes (LEDs) by using roughening surface. Nanoporous anodic aluminum oxide (AAO) mask was utilized to form nano-hole arrays on the surface of InGaN/GaN LEDs. AAO membranes with ordered hexagonal structures were fabricated from aluminum foils by a two-step anodization method. The average pore densities of ˜1.0 × 1010 cm-2 and 3.0 × 1010 cm-2 were fabricated with the constant anodization voltages of 25 and 40 V, respectively. Anodic porous alumina film with a thickness of ˜600 nm has been used as a mask for the induced couple plasma etching process to fabricate nano-hole arrays on the LED surface. Diameter and depth of nano-holes can be controlled by varying the etching duration and/or the diameter of AAO membranes. Due to the reduction of total internal reflection obtained in the patterned samples, we have observed that the cathodoluminescence intensity of LEDs with nanoporous structures is increased up to eight times compared to that of samples without using nanoporous structure.

Comparison of effects of diode laser and CO2 laser on human teeth and their usefulness in topical fluoridation.

PubMed

González-Rodríguez, Alberto; de Dios López-González, Juan; del Castillo, Juan de Dios Luna; Villalba-Moreno, Juan

2011-05-01

Various authors have reported more effective fluoridation from the use of lasers combined with topical fluoride than from conventional topical fluoridation. Besides the beneficial effect of lasers in reducing the acid solubility of an enamel surface, they can also increase the uptake of fluoride. The study objectives were to compare the action of CO(2) and GaAlAs diode lasers on dental enamel and their effects on pulp temperature and enamel fluoride uptake. Different groups of selected enamel surfaces were treated with amine fluoride and irradiated with CO(2) laser at an energy power of 1 or 2 W or with diode laser at 5 or 7 W for 15 s each and compared to enamel surfaces without treatment or topical fluoridated. Samples were examined by means of environmental scanning electron microscopy (ESEM). Surfaces of all enamel samples were then acid-etched, measuring the amount of fluoride deposited on the enamel by using a selective ion electrode. Other enamel surfaces selected under the same conditions were irradiated as described above, measuring the increase in pulp temperature with a thermocouple wire. Fluorination with CO(2) laser at 1 W and diode laser at 7 W produced a significantly greater fluoride uptake on enamel (89 ± 18 mg/l) and (77 ± 17 mg/l) versus topical fluoridation alone (58 ± 7 mg/l) and no treatment (20 ± 1 mg/l). Diode laser at 5 W produced a lesser alteration of the enamel surface compared to CO(2) laser at 1 W, but greater pulp safety was provided by CO(2) laser (ΔT° 1.60° ± 0.5) than by diode laser (ΔT° 3.16° ± 0.6). Diode laser at 7 W and CO(2) laser at 2 W both caused alterations on enamel surfaces, but great pulp safety was again obtained with CO(2) (ΔT° 4.44° ± 0.60) than with diode (ΔT° 5.25° ± 0.55). Our study demonstrates that CO(2) and diode laser irradiation of the enamel surface can both increase fluoride uptake; however, laser energy parameters must be carefully

On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Glukhovskoi, E. G.; Khazanov, A. A.

2016-06-15

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonidemore » and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.« less

Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.

PubMed

Darbandi, A; Kavanagh, K L; Watkins, S P

2015-08-12

GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.

Optical signal inverter of erbium-doped yttrium aluminum garnet with red shift of laser diodes.

PubMed

Maeda, Y

1994-08-10

An optical signal inverter was demonstrated in a simple structure that combined a laser diode with Er-doped YAG crystal. The optical signal inversion occurred at a response time of 7 ns and was caused by the decrease of transmission of Er:YAG against the red shift of the wavelength of the laser diode.

Behavior of pure gallium in water and various saline solutions.

PubMed

Horasawa, N; Nakajima, H; Takahashi, S; Okabe, T

1997-12-01

This study investigated the chemical stability of pure gallium in water and saline solutions in order to obtain fundamental knowledge about the corrosion mechanism of gallium-based alloys. A pure gallium plate (99.999%) was suspended in 50 mL of deionized water, 0.01%, 0.1% or 1% NaCl solution at 24 +/- 2 degrees C for 1, 7, or 28 days. The amounts of gallium released into the solutions were determined by atomic absorption spectrophotometry. The surfaces of the specimens were examined after immersion by x-ray diffractometry (XRD) and x-ray photoelectron spectroscopy (XPS). In the solutions containing 0.1% or more NaCl, the release of gallium ions into the solution was lowered when compared to deionized water after 28-day immersion. Gallium oxide monohydroxide was found by XRD on the specimens immersed in deionized water after 28-day immersion. XPS indicated the formation of gallium oxide/hydroxide on the specimens immersed in water or 0.01% NaCl solution. The chemical stability of pure solid gallium was strongly affected by the presence of Cl- ions in the aqueous solution.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE PAGES

Vizkelethy, G.; King, M. P.; Aktas, O.; ...

2016-12-02

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vizkelethy, G.; King, M. P.; Aktas, O.

Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

Photovoltaic Bias Generator

DTIC Science & Technology

2018-02-01

Research Laboratory Sensors and Electron Devices Directorate (ATTN: RDRL-SER-M) 2800 Powder Mill Rd Adelphi, MD 20783-1138 8. PERFORMING...that may be set between 200 mV and 400 mV, developed for an application using gallium arsenide pseudomorphic high electron mobility transistor

Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion

DTIC Science & Technology

2014-09-10

arsenide, gallium antimonide, gallium nitride and silicon carbide ; studied the role of the liquid’s composition on the sputtering of silicon ; study...being a material closely related to silicon . The maximum roughness for GaN, GaAs, GaSb, InP, InAs, Ge and SiC are 12.7, 11.7, 19.5, 8.1, 7.9, 17.5...poly crystalline silicon carbide and boron car- bide, respectively. The associated sputtering rates of 448, 172, and 170 nm/min far exceed the

15 Gb/s OFDM-based VLC using direct modulation of 450 GaN laser diode

NASA Astrophysics Data System (ADS)

Viola, Shaun; Islim, Mohamed Sufyan; Watson, Scott; Videv, Stefan; Haas, Harald; Kelly, Anthony E.

2017-10-01

A record data rate for visible light communications (VLC) using a transistor outline (TO) packaged Gallium Nitride (GaN) laser diode is reported. Using a system 3 dB bandwidth of 1.4 GHz data transmission at 15 Gb/s is reported. This is achieved due to the use of orthogonal frequency division multiplexing (OFDM) in combination with a high system signal to noise ratio (SNR) and adaptive bit loading extending the effective bandwidth to 2.5 GHz. To the best of authors knowledge this is the highest reported data rate for single channel VLC.

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

High Energy 2-Micron Laser Developments

NASA Technical Reports Server (NTRS)

Yu, Jirong; Trieu, Bo C.; Petros, Mulugeta; Bai, Yingxin; Petzar, Paul J.; Koch, Grady J.; Singh, Upendra N.; Kavaya, Michael J.

2007-01-01

A master oscillator power amplifier, high energy Q-switched 2-micron laser system has been recently demonstrated. The laser and amplifiers are all designed in side-pumped rod configuration, pumped by back-cooled conductive packaged GaAlAs diode laser arrays. This 2-micron laser system provides nearly transform limited beam quality.

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka

Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga 2O 3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barriermore » in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga 2O 3 photodetectors.« less

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

DOE PAGES

Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; ...

2016-03-10

Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga 2O 3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barriermore » in reverse bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga 2O 3 photodetectors.« less

Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer.

PubMed

Zhang, Jie; Zhang, Lin; Wang, Wei; Han, Lianhuan; Jia, Jing-Chun; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping

2017-03-01

Although metal assisted chemical etching (MacEtch) has emerged as a versatile micro-nanofabrication method for semiconductors, the chemical mechanism remains ambiguous in terms of both thermodynamics and kinetics. Here we demonstrate an innovative phenomenon, i.e. , the contact electrification between platinum (Pt) and an n-type gallium arsenide (100) wafer (n-GaAs) can induce interfacial redox reactions. Because of their different work functions, when the Pt electrode comes into contact with n-GaAs, electrons will move from n-GaAs to Pt and form a contact electric field at the Pt/n-GaAs junction until their electron Fermi levels ( E F ) become equal. In the presence of an electrolyte, the potential of the Pt/electrolyte interface will shift due to the contact electricity and induce the spontaneous reduction of MnO 4 - anions on the Pt surface. Because the equilibrium of contact electrification is disturbed, electrons will transfer from n-GaAs to Pt through the tunneling effect. Thus, the accumulated positive holes at the n-GaAs/electrolyte interface make n-GaAs dissolve anodically along the Pt/n-GaAs/electrolyte 3-phase interface. Based on this principle, we developed a direct electrochemical nanoimprint lithography method applicable to crystalline semiconductors.

SSI/MSI/LSI/VLSI/ULSI.

ERIC Educational Resources Information Center

Alexander, George

1984-01-01

Discusses small-scale integrated (SSI), medium-scale integrated (MSI), large-scale integrated (LSI), very large-scale integrated (VLSI), and ultra large-scale integrated (ULSI) chips. The development and properties of these chips, uses of gallium arsenide, Josephson devices (two superconducting strips sandwiching a thin insulator), and future…

Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-Electronic Devices.

NASA Astrophysics Data System (ADS)

Huang, Daming

1990-01-01

In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

PubMed Central

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W.; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-01-01

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials. PMID:26006731

Synchrotron X-ray topography of electronic materials.

PubMed

Tuomi, T

2002-05-01

Large-area transmission, transmission section, large-area back-reflection, back-reflection section and grazing-incidence topography are the geometries used when recording high-resolution X-ray diffraction images with synchrotron radiation from a bending magnet, a wiggler or an undulator of an electron or a positron storage ring. Defect contrast can be kinematical, dynamical or orientational even in the topographs recorded on the same film at the same time. In this review article limited to static topography experiments, examples of defect studies on electronic materials cover the range from voids and precipitates in almost perfect float-zone and Czochralski silicon, dislocations in gallium arsenide grown by the liquid-encapsulated Czochralski technique, the vapour-pressure controlled Czochralski technique and the vertical-gradient freeze technique, stacking faults and micropipes in silicon carbide to misfit dislocations in epitaxic heterostructures. It is shown how synchrotron X-ray topographs of epitaxic laterally overgrown gallium arsenide layer structures are successfully explained by orientational contrast.

MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

NASA Astrophysics Data System (ADS)

1993-01-01

Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

P-n junctions formed in gallium antimonide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.

Synthesis and characterization of aluminum- and gallium-bridged [1.1]chromarenophanes and [1.1]molybdarenophanes.

PubMed

Lund, Clinton L; Schachner, Jörg A; Burgess, Ian J; Quail, J Wilson; Schatte, Gabriele; Müller, Jens

2008-07-07

The synthesis and structural characterization of the first [1.1]chromarenophanes and the first [1.1]molybdarenophanes are described. A salt-metathesis reaction of [2-(Me 2NCH 2)C 6H 4]AlCl 2 with freshly prepared [Cr(LiC 6H 5) 2].TMEDA (TMEDA = N, N, N', N'-tetramethylethylenediamine) resulted in the dialumina[1.1]chromarenophane [{2-(Me 2NCH 2)C 6H 4}Al(eta (6)-C 6H 5) 2Cr] 2 ( 2a). The poor solubility of 2a in organic solvents prompted us to synthesize the new intramolecularly coordinated aluminum- and gallium dichlorides [5- tBu-2-(Me 2NCH 2)C 6H 3]ECl 2 [E = Al ( 3a), Ga ( 3b)] in which the phenyl group was equipped with a tert-butyl group. Salt-metathesis reactions of 3a and 3b, respectively, with freshly prepared [M(LiC 6H 5) 2].TMEDA (M = Cr, Mo) resulted in four new [1.1]metallarenophanes of the general type [{5- tBu-2-(Me 2NCH 2)C 6H 3}E(eta (6)-C 6H 5) 2M] 2 [E = Al, M = Cr ( 4a); E = Ga, M = Cr ( 4b); E = Al, M = Mo ( 5a); E = Ga, M = Mo ( 5b)]. 2a, 4a, b, and 5a, b have been structurally characterized by single-crystal analysis [ 2a.1/2C 6H 12: C 48H 56Al 2Cr 2N 2, monoclinic, P2 1/ c, a = 9.9117(9) A, b = 19.9361(16) A, c = 10.638(2) A, alpha = 90 degrees , beta = 112.322(5) degrees , gamma = 90 degrees , Z = 2; 4a.2C 6H 6: C 62H 72Al 2Cr 2N 2, monoclinic, P2 1/ c, a = 10.9626(9) A, b = 19.3350(18) A, c = 12.4626(9) A, alpha = 90 degrees , beta = 100.756(5) degrees , gamma = 90 degrees , Z = 2; 4b.2C 6H 6: C 62H 72Cr 2Ga 2N 2, monoclinic, P2 1/ c, a = 10.8428(2) A, b = 19.4844(4) A, c = 12.4958(2) A, alpha = 90 degrees , beta = 100.6187 degrees , gamma = 90 degrees , Z = 2; 5a.2C 6H 6: C 62H 72Al 2Mo 2N 2, triclinic, P1, a = 10.4377(4) A, b = 11.6510(4) A, c = 11.6514(4) A, alpha = 73.545(3) degrees , beta = 89.318(2) degrees , gamma = 76.120(2) degrees , Z = 1; 5b.2C 6H 6: C 62H 72Ga 2Mo 2N 2, triclinic, P1, a = 10.3451(5) A, b = 11.6752(6) A, c = 11.6900(5) A, alpha = 73.917(3) degrees , beta = 89.550(3) degrees , gamma = 76.774(2) degrees , Z = 1

PDT in non-surgical treatment of periodontitis in kidney transplanted patients: a split-mouth, randomized clinical trial

NASA Astrophysics Data System (ADS)

Marinho, Kelly C. T.; Giovani, Elcio M.

2016-03-01

This study was to evaluate clinical and microbiological effectiveness of photodynamic therapy (PDT) in the treatment of periodontal disease in kidney-transplanted patients. Eight kidney transplanted patients treated at Paulista University were arranged in two groups: SRP performed scaling and root planning by ultrasound; SRP+PDT- in the same patient, which was held to PDT in the opposite quadrant, with 0.01% methylene blue and red laser gallium aluminum arsenide, wavelength 660 nm, power 100 mW. There was reduction in probing pocket depth after 45 days and 3 months regardless the group examined; plaque and bleeding index showed improvement over time, regardless the technique used, and bleeding index in the SRP+PDT group was lower when compared with the baseline the other times. There was no difference in the frequency of pathogens. Photodynamic therapy may be an option for treatment of periodontal disease in renal-transplanted patients and its effectiveness is similar to conventional therapy.

Gallium 67 scintigraphy in glomerular disease

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.

1988-12-01

To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabeticmore » neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.« less

Assessment of gallium-67 scanning in pulmonary and extrapulmonary sarcoidosis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Israel, H.L.; Gushue, G.F.; Park, C.H.

1986-01-01

Gallium-67 scans have been widely employed in patients with sarcoidosis as a means of indicating alveolitis and the need for corticosteroid therapy. Observation of 32 patients followed 3 or more years after gallium scans showed no correlation between findings and later course: of 10 patients with pulmonary uptake, 7 recovered with minor residuals; of 18 patients with mediastinal of extrathoracic uptake, 10 had persistent or progressive disease; of 4 patients with negative initial scans, 2 had later progression. The value of gallium-67 scans as an aid to diagnosis was studied in 40 patients with extrapulmonary sarcoidosis. In 12 patients, abnormalmore » lacrimal, nodal, or pulmonary uptake aided in selection of biopsy sites. Gallium-67 scans and serum ACE levels were compared in 97 patients as indices of clinical activity. Abnormal gallium-67 uptake was observed in 96.3% of the tests in active disease, and ACE level elevation occurred in 56.3%. In 24 patients with inactive or recovered disease, abnormal gallium-67 uptake occurred in 62.5% and ACE level elevation in 37.5%. Gallium-67 scans have a limited but valuable role in the diagnosis and management of sarcoidosis.« less

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

PubMed

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Spatial Combining of Laser-Diode Beams for Pumping an NPRO

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan; Mulder, Jerry; Aguayo, Francisco

2008-01-01

A free-space optical beam combiner now undergoing development makes it possible to use the outputs of multiple multimode laser diodes to pump a neodymium-doped yttrium aluminum garnet (Nd:YAG) non-planar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, a Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained in this article, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. To minimize coupling loss, one must ensure that the NA (approximately equal to 0.3) of the combined laser-diode beams is less than the NA of the fiber. The A(Omega) of the laser-diode beam in the slow-axis plane is 1/1.3 as large as that of the fiber. This A(Omega) is small enough to enable efficient coupling of light into the optical fiber, but too large for combining of beams in the slow-axis plane. Therefore, a pair of cylindrical lenses is used to cancel the slow-axis plane magnification introduced by the on-cylindrical lenses used to effect magnification in the fast-axis plane.

Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

1989-01-01

Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patientsmore » with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.« less

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip

NASA Astrophysics Data System (ADS)

Cardoso, F. A.; Ferreira, H. A.; Conde, J. P.; Chu, V.; Freitas, P. P.; Vidal, D.; Germano, J.; Sousa, L.; Piedade, M. S.; Costa, B. A.; Lemos, J. M.

2006-04-01

Magnetoresistive biochips have been recently introduced for the detection of biomolecular recognition. In this work, the detection site incorporates a thin-film diode in series with a magnetic tunnel junction (MTJ), leading to a matrix-based biochip that can be easily scaled up to screen large numbers of different target analytes. The fabricated 16×16 cell matrix integrates hydrogenated amorphous silicon (a-Si:H) diodes with aluminum oxide barrier MTJ. Each detection site also includes a U-shaped current line for magnetically assisted target concentration at probe sites. The biochip is being integrated in a portable, credit card size electronics control platform. Detection of 250 nm diameter magnetic nanoparticles by one of the matrix cells is demonstrated.

Titanium scaffold osteogenesis in healthy and osteoporotic rats is improved by the use of low-level laser therapy (GaAlAs).

PubMed

de Vasconcellos, Luana Marotta Reis; Barbara, Mary Anne Moreira; Rovai, Emanuel da Silva; de Oliveira França, Mariana; Ebrahim, Zahra Fernandes; de Vasconcellos, Luis Gustavo Oliveira; Porto, Camila Deco; Cairo, Carlos Alberto Alves

2016-07-01

The present study aimed to assess the effects of low-level laser therapy (GaAlAs) on the bone repair process within titanium scaffolds in the femurs of healthy and osteoporotic rats. Fifty-six rats were divided into four groups: group Sh: SHAM animals that received scaffolds; group LSh: SHAM animals that received scaffolds and were subjected to laser therapy; group OV: ovarietomized (OVX) animals that received scaffolds; and group LOV: OVX animals that received scaffolds and were subjected to laser therapy. Thirty days following ovariectomy or sham surgery, scaffolds were implanted in the left femurs of all animals in the study. Immediately after opening the surgical site, the inner part of the surgical cavity was stimulated with low-level laser (GaAlAs). In addition to this procedure, the laser group was also subjected to sessions of low-level laser therapy (LLLT) at 48-h intervals, with the first session performed immediately after surgery. The rats were sacrificed at 2 and 6 weeks, time in which femur fragments were submitted for histological and histomorphometric examination, and skin tissue above the scaffold was submitted to histological analysis. At the end of the study, greater bone formation was observed in the animals submitted to LLLT. At 2 and 6 weeks, statistically significant differences were observed between LSh and Sh groups (p = 0.009 and 0.0001) and LOV and OV (p = 0.0001 and 0.0001), respectively. No statistical difference was observed when assessing the estrogen variable. On the basis of our methodology and results, we conclude that LLLT improves and accelerates bone repair within titanium scaffolds in both ovariectomized and healthy rats, when compared to animals not subjected to radiation.

Construction of an electrode modified with gallium(III) for voltammetric detection of ovalbumin.

PubMed

Sugawara, Kazuharu; Okusawa, Makoto; Takano, Yusaku; Kadoya, Toshihiko

2014-01-01

Electrodes modified with gallium(III) complexes were constructed to detect ovalbumin (OVA). For immobilization of a gallium(III)-nitrilotriacetate (NTA) complex, the electrode was first covered with collagen film. After the amino groups of the film had reacted with isothiocyanobenzyl-NTA, the gallium(III) was then able to combine with the NTA moieties. Another design featured an electrode cast with a gallium(III)-acetylacetonate (AA) complex. The amount of gallium(III) in the NTA complex was equivalent to one-quarter of the gallium(III) that could be utilized from an AA complex. However, the calibration curves of OVA using gallium(III)-NTA and gallium(III)-AA complexes were linear in the ranges of 7.0 × 10(-11) - 3.0 × 10(-9) M and 5.0 × 10(-10) - 8.0 × 10(-9) M, respectively. The gallium(III) on the electrode with NTA complex had high flexibility due to the existence of a spacer between the NTA and the collagen film, and, therefore, the reactivity of the gallium(III) to OVA was superior to that of the gallium(III)-AA complex with no spacer.

Efficient eye-safe neodymium doped composite yttrium gallium garnet crystal laser.

PubMed

Yu, Haohai; Wang, Shuxian; Han, Shuo; Wu, Kui; Su, Liangbi; Zhang, Huaijin; Wang, Zhengping; Xu, Jun; Wang, Jiyang

2014-03-15

We report a laser-diode pumped continuous-wave (cw) and passively Q-switched eye-safe laser at about 1.42 μm with the neodymium-doped yttrium gallium garnet (Nd:YGG) crystal for the first time to our knowledge. The composite Nd:YGG crystal was developed originally. A systematic comparison of laser performance between the homogeneously doped and composite Nd:YGG crystal was made, which showed that the composite Nd:YGG manifested less thermally induced effects. Cw output power of 2.06 W was obtained with the slope efficiency of 20.7%. With a V:YAG as a saturable absorber, the passive Q-switching at 1.42 μm was gotten with the pulse width, pulse energy, and peak power of 34 ns, 46.7 μJ, and 1.4 kW, respectively. The present work should provide a potential candidate for the generation of eye-safe lasers.

Sensitizing effects of gallium citrate on hyperthermic cell killing in vitro.

PubMed

Miyazaki, N; Nakano, H; Kawakami, N; Kugotani, M; Nishihara, K; Aoki, Y; Shinohara, K

2000-01-01

The lethal effects of gallium citrate in combination with heat were studied using four cell lines, L5178Y, FM3A, P388 and HeLa. Cells were incubated with different concentrations (0.2 2 mM) of gallium citrate at 37 degrees C for 24 h and heated at a range of temperatures from 40-44 degrees C for various time periods up to 6 h in the absence of gallium citrate. Survival and cell viability were determined by clonogenic assay and the dye-exclusion test, respectively. All of the cell lines tested were insensitive to heat below 41 degrees C, but were very sensitive to heat above 43 degrees C. Gallium citrate was cytotoxic to these cell lines at different levels: P388 and HeLa were far more sensitive than L5178Y and FM3A. The killing effects of heat at 41 degrees C were greatly enhanced by gallium citrate in L5178Y and P388 cells. The Arrhenius analysis for the lethal effect of heat, determined by clonogenic assay, in L5178Y cells showed that the transition temperature was remarkably decreased for the gallium-treated cells from approximately 43 degrees C to 41 degrees C. The mechanism for this decrease in the transition temperature may be attributable to the additional effects of gallium citrate on energy metabolism. Preincubation with 0.05 mM gallium citrate at 37 degrees C for 7 days also enhanced heat sensitization at 41 degrees C in L5178Y. This preincubation condition may correspond to the condition for the continuous infusion of gallium that is clinically used for cancer treatment. In contrast, treatment with gallium did not greatly enhance the sensitivity of FM3A or HeLa cells to heat at 41 degrees C, but the effects of gallium were significant.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

NASA Astrophysics Data System (ADS)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Fast Clock Recovery for Digital Communications

NASA Technical Reports Server (NTRS)

Tell, R. G.

1985-01-01

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

NASA Technical Reports Server (NTRS)

Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.

1992-01-01

In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

Nuclear microprobe imaging of gallium nitrate in cancer cells

NASA Astrophysics Data System (ADS)

Ortega, Richard; Suda, Asami; Devès, Guillaume

2003-09-01

Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

Gallium uptake by transferrin and interaction with receptor 1.

PubMed

Chikh, Zohra; Ha-Duong, Nguyêt-Thanh; Miquel, Geneviève; El Hage Chahine, Jean-Michel

2007-01-01

The kinetics and thermodynamics of Ga(III) exchange between gallium mononitrilotriacetate and human serum transferrin as well as those of the interaction between gallium-loaded transferrin and the transferrin receptor 1 were investigated in neutral media. Gallium is exchanged between the chelate and the C-site of human serum apotransferrin in interaction with bicarbonate in about 50 s to yield an intermediate complex with an equilibrium constant K (1) = (3.9 +/- 1.2) x 10(-2), a direct second-order rate constant k (1) = 425 +/- 50 M(-1) s(-1) and a reverse second-order rate constant k (-1) = (1.1 +/- 3) x 10(4) M(-1) s(-1). The intermediate complex loses a single proton with proton dissociation constant K (1a) = 80 +/- 40 nM to yield a first kinetic product. This product then undergoes a modification in its conformation which lasts about 500 s to produce a second kinetic intermediate, which in turn undergoes a final extremely slow (several hours) modification in its conformation to yield the gallium-saturated transferrin in its final state. The mechanism of gallium uptake differs from that of iron and does not involve the same transitions in conformation reported during iron uptake. The interaction of gallium-loaded transferrin with the transferrin receptor occurs in a single very fast kinetic step with a dissociation constant K (d) = 1.10 +/- 0.12 microM and a second-order rate constant k (d) = (1.15 +/- 0.3) x 10(10) M(-1) s(-1). This mechanism is different from that observed with the ferric holotransferrin and suggests that the interaction between the receptor and gallium-loaded transferrin probably takes place on the helical domain of the receptor which is specific for the C-site of transferrin and HFE. The relevance of gallium incorporation by the transferrin receptor-mediated iron-acquisition pathway is discussed.

The gallium melting-point standard: a determination of the liquid-solid equilibrium temperature of pure gallium on the International Practical Temperature Scale of 1968.

PubMed

Thornton, D D

1977-01-01

The sharpness and reproducibility of the gallium melting point were studied and the melting temperature of gallium in terms of IPTS-68 was determined. Small melting-point cells designed for use with thermistors are described. Nine gallium cells including three levels of purity were used in 68 separate determinations fo the melting point. The melting point of 99.99999% pure gallium in terms of IPTS-68 is found to be 29.771(4) +/- 0.001(4) degree C; the melting range is less than 0.0005 degree C and is reproducible to +/- 0.0004 degree C.

Composition of the core from gallium metal–silicate partitioning experiments

DOE PAGES

Blanchard, I.; Badro, J.; Siebert, J.; ...

2015-07-24

We present gallium concentration (normalized to CI chondrites) in the mantle is at the same level as that of lithophile elements with similar volatility, implying that there must be little to no gallium in Earth's core. Metal-silicate partitioning experiments, however, have shown that gallium is a moderately siderophile element and should be therefore depleted in the mantle by core formation. Moreover, gallium concentrations in the mantle (4 ppm) are too high to be only brought by the late veneer; and neither pressure, nor temperature, nor silicate composition has a large enough effect on gallium partitioning to make it lithophile. Wemore » therefore systematically investigated the effect of core composition (light element content) on the partitioning of gallium by carrying out metal–silicate partitioning experiments in a piston–cylinder press at 2 GPa between 1673 K and 2073 K. Four light elements (Si, O, S, C) were considered, and their effect was found to be sufficiently strong to make gallium lithophile. The partitioning of gallium was then modeled and parameterized as a function of pressure, temperature, redox and core composition. A continuous core formation model was used to track the evolution of gallium partitioning during core formation, for various magma ocean depths, geotherms, core light element contents, and magma ocean composition (redox) during accretion. The only model for which the final gallium concentration in the silicate Earth matched the observed value is the one involving a light-element rich core equilibrating in a FeO-rich deep magma ocean (>1300 km) with a final pressure of at least 50 GPa. More specifically, the incorporation of S and C in the core provided successful models only for concentrations that lie far beyond their allowable cosmochemical or geophysical limits, whereas realistic O and Si amounts (less than 5 wt.%) in the core provided successful models for magma oceans deeper that 1300 km. In conclusion, these results

Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

DTIC Science & Technology

1987-09-01

laser diode arrays are intended to be used as an optical pump for solid state yttrium aluminum garnet (YAG) lasers. In particular, linear uniform...corresponds to about . , 8080A. Such thin layer structures, while difficult to grow by such conventional growth methods as liquid phase epitaxy ( LPE ...lower yet than for DH lasers grown by LPE . , - Conventional self-aligned stripe laser This structure is formed by growing (on an n-type GaAs substrate

Aluminum nitride coatings using response surface methodology to optimize the thermal dissipated performance of light-emitting diode modules

NASA Astrophysics Data System (ADS)

Jean, Ming-Der; Lei, Peng-Da; Kong, Ling-Hua; Liu, Cheng-Wu

2018-05-01

This study optimizes the thermal dissipation ability of aluminum nitride (AlN) ceramics to increase the thermal performance of light-emitting diode (LED) modulus. AlN powders are deposited on heat sink as a heat interface material, using an electrostatic spraying process. The junction temperature of the heat sink is developed by response surface methodology based on Taguchi methods. In addition, the structure and properties of the AlN coating are examined using X-ray photoelectron spectroscopy (XPS). In the XPS analysis, the AlN sub-peaks are observed at 72.79 eV for Al2p and 398.88 eV for N1s, and an N1s sub-peak is assigned to N-O at 398.60eV and Al-N bonding at 395.95eV, which allows good thermal properties. The results have shown that the use of AlN ceramic material on a heat sink can enhance the thermal performance of LED modules. In addition, the percentage error between the predicted and experimental results compared the quadric model with between the linear and he interaction models was found to be within 7.89%, indicating that it was a good predictor. Accordingly, RSM can effectively enhance the thermal performance of an LED, and the beneficial heat dissipation effects for AlN are improved by electrostatic spraying.

Japanese aerospace science and technology 1992. A bibliography with indexes

NASA Technical Reports Server (NTRS)

1993-01-01

This report contains 4271 annotated references to reports and journal articles of Japaness intellectual origin entered into the NASA scientific and technical information system during 1992. Representative subject areas of interest include: adaptive control, antireflection coatings, fiber reinforced composites, gallium arsenide lasers, laser interferometry, reduced gravity (microgravity), and VHSIC (circuits).

Ultralow-Threshold Electrically Pumped Quantum-Dot Photonic-Crystal Nanocavity Laser

DTIC Science & Technology

2011-05-01

we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p–i–n junction formed by ion implantation...330 nm layer of silicon nitride was then deposited on the sample using plasma-enhanced chemical vapour deposition (PECVD) to serve as a mask for ion

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Treesearch

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Two chain gallium fluorodiphosphates: synthesis, structure solution, and their transient presence during the hydrothermal crystallisation of a microporous gallium fluorophosphate.

PubMed

Millange, Franck; Walton, Richard I; Guillou, Nathalie; Loiseau, Thierry; O'Hare, Dermot; Férey, Gérard

2002-04-21

Two novel gallium fluorodiphosphates have been isolated and their structures solved ab initio from powder X-ray diffraction data; the materials readily interconvert under hydrothermal conditions, and are metastable with respect to an open-framework zeolitic gallium fluorophosphate, during the synthesis of which they are present as transient intermediates.

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

NASA Technical Reports Server (NTRS)

Groves, W. O. (Inventor)

1969-01-01

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Gallium arsenide (GaAs) power conversion concept

NASA Technical Reports Server (NTRS)

Nussberger, A. A.

1980-01-01

A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.

Noise-margin limitations on gallium-arsenide VLSI

NASA Technical Reports Server (NTRS)

Long, Stephen I.; Sundaram, Mani

1988-01-01

Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15,000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits wil be needed to extend circuit complexity to the range currently dominated by silicon.

Gallium arsenide solar cell radiation damage study

NASA Technical Reports Server (NTRS)

Maurer, R. H.; Herbert, G. A.; Kinnison, J. D.; Meulenberg, A.

1989-01-01

A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response.

Interfacial reactions between metal and gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, J.C.; Schulz, K.J.; Hsieh, K.C.

1989-10-01

The phase formation sequence for GaAs/metal ternary diffusion couples is discussed. The diffusion path concept is introduced and is used with the phase diagram to understand interfacial reactions between GaAs and metal. The correlation between growth kinetics and interface morphology is discussed. Studies of bulk and thin film couples in two systems, GaAs/Pd and GaAs/Pt, are given to illustrate these concepts.

Gallium induces the production of virulence factors in Pseudomonas aeruginosa.

PubMed

García-Contreras, Rodolfo; Pérez-Eretza, Berenice; Lira-Silva, Elizabeth; Jasso-Chávez, Ricardo; Coria-Jiménez, Rafael; Rangel-Vega, Adrián; Maeda, Toshinari; Wood, Thomas K

2014-02-01

The novel antimicrobial gallium is a nonredox iron III analogue with bacteriostatic and bactericidal properties, effective for the treatment of Pseudomonas aeruginosa in vitro and in vivo in mouse and rabbit infection models. It interferes with iron metabolism, transport, and presumably its homeostasis. As gallium exerts its antimicrobial effects by competing with iron, we hypothesized that it ultimately will lead cells to an iron deficiency status. As iron deficiency promotes the expression of virulence factors in vitro and promotes the pathogenicity of P. aeruginosa in animal models, it is anticipated that treatment with gallium will also promote the production of virulence factors. To test this hypothesis, the reference strain PA14 and two clinical isolates from patients with cystic fibrosis were exposed to gallium, and their production of pyocyanin, rhamnolipids, elastase, alkaline protease, alginate, pyoverdine, and biofilm was determined. Gallium treatment induced the production of all the virulence factors tested in the three strains except for pyoverdine. In addition, as the Ga-induced virulence factors are quorum sensing controlled, co-administration of Ga and the quorum quencher brominated furanone C-30 was assayed, and it was found that C-30 alleviated growth inhibition from gallium. Hence, adding both C-30 and gallium may be more effective in the treatment of P. aeruginosa infections. © 2013 Federation of European Microbiological Societies. Published by John Wiley & Sons Ltd. All rights reserved.

Control of Gallium Oxide Growth on Liquid Metal Eutectic Gallium/Indium Nanoparticles via Thiolation.

PubMed

Farrell, Zachary J; Tabor, Christopher

2018-01-09