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Sample records for gan prime yu

  1. Prime Knowledge about Primes

    ERIC Educational Resources Information Center

    Eisenberg, Theodore

    2007-01-01

    Several proofs demonstrating that there are infinitely many primes, different types of primes, tests of primality, pseudo primes, prime number generators and open questions about primes are discussed in Section 1. Some of these notions are elaborated upon in Section 2, with discussions of the Riemann zeta function and how algorithmic complexity…

  2. Swift Captures Asteroid 2005 YU55 Flyby

    NASA Video Gallery

    Asteroid 2005 YU55 whisks through the field of view of Swift's Ultraviolet/Optical Telescope (UVOT) on Nov. 9, just hours after the space rock made its closest approach to Earth. The video plays on...

  3. Immunity of PCB transplacental Yu-Cheng children in Taiwan

    SciTech Connect

    Lan, Shou Jen; Yen, Yea Yin; Chen, Eng Rin; Ko, Ying Chin ); Lan, Joung Liang )

    1990-02-01

    Up to now, there has been no studies about the immune status of PCB transplacental Yu-Cheng babies. In an earlier study, Yu-Cheng babies were reported to have a high infant mortality rate. It was reported that these babies would easily catch cold, experience diarrhea and abdominal pains. Recently, it was found that the bronchitis rate of Yu-Cheng babies is higher than in control babies. Because of high risk of infection, it is presumed that these babies might suffer immunosuppression to a certain extent. According to these findings, investigations into the immune functions of PCB transplacental Yu-Cheng babies are needed.

  4. Roma Gans: Still Writing at 95.

    ERIC Educational Resources Information Center

    Sullivan, Joanna

    1991-01-01

    Recounts discussions with reading educator Roma Gans over a 25-year period. Presents Gans' views about reading, teachers, her family, and her years at Teachers College, Columbia. Notes that Gans has seen the teaching of reading come full circle since her first teaching assignment in 1919. (RS)

  5. Problems with Primes

    ERIC Educational Resources Information Center

    Melrose, Tim; Scott, Paul

    2005-01-01

    This article discusses prime numbers, defined as integers greater than 1 that are divisible only by only themselves and the number 1. A positive integer greater than 1 that is not a prime is called composite. The number 1 itself is considered neither prime nor composite. As the name suggests, prime numbers are one of the most basic but important…

  6. Oxygen in GaN.

    NASA Astrophysics Data System (ADS)

    van de Walle, Chris G.; Neugebauer, Jörg

    1997-03-01

    Oxygen is commonly present during epitaxial growth of GaN. We have proposed that unintentional incorporation of O, as well as Si, is responsible for the frequently observed n-type conductivity in as-grown GaN. Here we present results from comprehensive density-functional-pseudopotential studies of GaN:O under pressure, and of O interactions with native defects and dopant impurities. We find that the O donor undergoes a DX-like transition under pressure: a large outward relaxation introduces a deep level in the band gap. This behavior explains the carrier freezeout in GaN under pressure.^1 Si donors do not exhibit the transition, consistent with experiment. Results for these impurities in AlGaN will also be discussed. We have also investigated the interaction between O and native defects. Most notably we find a large binding energy between O and the gallium vacancy (V_Ga), which we have proposed to be the source of the yellow luminescence. Finally, we have studied the interaction between O and Mg acceptors. The incorporation of the O donor is significantly enhanced in Mg-doped material. In addition, we calculate a binding energy of 0.6 eV for Mg-O complexes. The presence of O during growth can thus be detrimental to p-type GaN. ^1 C. Wetzel et al., Proc. ICPS-23 (World Scientific, Singapore, 1996), p. 2929.

  7. Motor Priming in Neurorehabilitation

    PubMed Central

    Stoykov, Mary Ellen; Madhavan, Sangeetha

    2014-01-01

    Priming is a type of implicit learning wherein a stimulus prompts a change in behavior. Priming has been long studied in the field of psychology. More recently, rehabilitation researchers have studied motor priming as a possible way to facilitate motor learning. For example, priming of the motor cortex is associated with changes in neuroplasticity that are associated with improvements in motor performance. Of the numerous motor priming paradigms under investigation, only a few are practical for the current clinical environment, and the optimal priming modalities for specific clinical presentations are not known. Accordingly, developing an understanding of the various types of motor priming paradigms and their underlying neural mechanisms is an important step for therapists in neurorehabilitation. Most importantly, an understanding of the methods and their underlying mechanisms is essential for optimizing rehabilitation outcomes. The future of neurorehabilitation is likely to include these priming methods, which are delivered prior to or in conjunction with primary neurorehabilitation therapies. In this Special Interest article we discuss those priming paradigms that are supported by the greatest amount of evidence including: (i) stimulation-based priming, (ii) motor imagery and action observation, (iii) sensory priming, (iv) movement-based priming, and (v) pharmacological priming. PMID:25415551

  8. Repetition Priming in Music

    ERIC Educational Resources Information Center

    Hutchins, Sean; Palmer, Caroline

    2008-01-01

    The authors explore priming effects of pitch repetition in music in 3 experiments. Musically untrained participants heard a short melody and sang the last pitch of the melody as quickly as possible. Each experiment manipulated (a) whether or not the tone to be sung (target) was heard earlier in the melody (primed) and (b) the prime-target distance…

  9. [On the contribution of Prof. Yu. S. Balashov to the fundamental parasitology].

    PubMed

    Ryss, A Iu

    2013-01-01

    Brief review of main conceptions of Yu. S. Balasov in fundamental parasitology: types of host-parasite relations, evolution, transmissive infections, econiches, population structure, parasite communities.

  10. Repetition priming in music.

    PubMed

    Hutchins, Sean; Palmer, Caroline

    2008-06-01

    The authors explore priming effects of pitch repetition in music in 3 experiments. Musically untrained participants heard a short melody and sang the last pitch of the melody as quickly as possible. Each experiment manipulated (a) whether or not the tone to be sung (target) was heard earlier in the melody (primed) and (b) the prime-target distance (measured in events). Experiment 1 used variable-length melodies, whereas Experiments 2 and 3 used fixed-length melodies. Experiment 3 changed the timbre of the target tone. In all experiments, fast-responding participants produced repeated tones faster than nonrepeated tones, and this repetition benefit decreased as prime-target distances increased. All participants produced expected tonic endings faster than less expected nontonic endings. Repetition and tonal priming effects are compared with harmonic priming effects in music and with repetition priming effects in language. PMID:18505332

  11. Repetition priming in music.

    PubMed

    Hutchins, Sean; Palmer, Caroline

    2008-06-01

    The authors explore priming effects of pitch repetition in music in 3 experiments. Musically untrained participants heard a short melody and sang the last pitch of the melody as quickly as possible. Each experiment manipulated (a) whether or not the tone to be sung (target) was heard earlier in the melody (primed) and (b) the prime-target distance (measured in events). Experiment 1 used variable-length melodies, whereas Experiments 2 and 3 used fixed-length melodies. Experiment 3 changed the timbre of the target tone. In all experiments, fast-responding participants produced repeated tones faster than nonrepeated tones, and this repetition benefit decreased as prime-target distances increased. All participants produced expected tonic endings faster than less expected nontonic endings. Repetition and tonal priming effects are compared with harmonic priming effects in music and with repetition priming effects in language.

  12. Anelasticity of GaN Epitaxial Layer in GaN LED

    NASA Astrophysics Data System (ADS)

    Chung, C. C.; Yang, C. T.; Liu, C. Y.

    2016-10-01

    In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work.

  13. GaN High Power Devices

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

    2000-07-17

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  14. Comments on Yu N Parkhomenko's paper 'Role of aberration effects in dispersive cavities'

    SciTech Connect

    Anokhov, S P

    1999-09-30

    The legitimacy of the approach, proposed by Yu N Parkhomenko for dealing with the operation of solid-state lasers with dispersive cavities, is discussed. Additional information is provided on the neodymium glass laser, used in the present author's experiment. Comment on A Yu N Parkhomenko 1998 Quantum Electron. 28 1102. (discussion)

  15. PRIME Lab Radiocarbon Measurements

    NASA Astrophysics Data System (ADS)

    Hillegonds, D. J.; Mueller, K. A.; Ma, X.; Lipschutz, M. E.

    1996-03-01

    The Purdue Rare Isotope Measurement Laboratory (PRIME Lab) is one of three NSF national facilities for accelerator mass spectrometry (AMS), and is the only one capable of determining six cosmogenic radionuclides: 10Be, 14C, 26Al, 36Cl, 41Ca, and 129I. This abstract describes the current status of the radiocarbon analysis program at PRIME Lab.

  16. Priming Ability Emotional Intelligence

    ERIC Educational Resources Information Center

    Schutte, Nicola S.; Malouff, John M.

    2012-01-01

    Two studies examined whether priming self-schemas relating to successful emotional competency results in better emotional intelligence performance. In the first study participants were randomly assigned to a successful emotional competency self-schema prime condition or a control condition and then completed an ability measure of emotional…

  17. Priming Gestures with Sounds

    PubMed Central

    Lemaitre, Guillaume; Heller, Laurie M.; Navolio, Nicole; Zúñiga-Peñaranda, Nicolas

    2015-01-01

    We report a series of experiments about a little-studied type of compatibility effect between a stimulus and a response: the priming of manual gestures via sounds associated with these gestures. The goal was to investigate the plasticity of the gesture-sound associations mediating this type of priming. Five experiments used a primed choice-reaction task. Participants were cued by a stimulus to perform response gestures that produced response sounds; those sounds were also used as primes before the response cues. We compared arbitrary associations between gestures and sounds (key lifts and pure tones) created during the experiment (i.e. no pre-existing knowledge) with ecological associations corresponding to the structure of the world (tapping gestures and sounds, scraping gestures and sounds) learned through the entire life of the participant (thus existing prior to the experiment). Two results were found. First, the priming effect exists for ecological as well as arbitrary associations between gestures and sounds. Second, the priming effect is greatly reduced for ecologically existing associations and is eliminated for arbitrary associations when the response gesture stops producing the associated sounds. These results provide evidence that auditory-motor priming is mainly created by rapid learning of the association between sounds and the gestures that produce them. Auditory-motor priming is therefore mediated by short-term associations between gestures and sounds that can be readily reconfigured regardless of prior knowledge. PMID:26544884

  18. Discovery: Prime Numbers

    ERIC Educational Resources Information Center

    de Mestre, Neville

    2008-01-01

    Prime numbers are important as the building blocks for the set of all natural numbers, because prime factorisation is an important and useful property of all natural numbers. Students can discover them by using the method known as the Sieve of Eratosthenes, named after the Greek geographer and astronomer who lived from c. 276-194 BC. Eratosthenes…

  19. Building Numbers from Primes

    ERIC Educational Resources Information Center

    Burkhart, Jerry

    2009-01-01

    Prime numbers are often described as the "building blocks" of natural numbers. This article shows how the author and his students took this idea literally by using prime factorizations to build numbers with blocks. In this activity, students explore many concepts of number theory, including the relationship between greatest common factors and…

  20. The semantic priming project.

    PubMed

    Hutchison, Keith A; Balota, David A; Neely, James H; Cortese, Michael J; Cohen-Shikora, Emily R; Tse, Chi-Shing; Yap, Melvin J; Bengson, Jesse J; Niemeyer, Dale; Buchanan, Erin

    2013-12-01

    Speeded naming and lexical decision data for 1,661 target words following related and unrelated primes were collected from 768 subjects across four different universities. These behavioral measures have been integrated with demographic information for each subject and descriptive characteristics for every item. Subjects also completed portions of the Woodcock-Johnson reading battery, three attentional control tasks, and a circadian rhythm measure. These data are available at a user-friendly Internet-based repository ( http://spp.montana.edu ). This Web site includes a search engine designed to generate lists of prime-target pairs with specific characteristics (e.g., length, frequency, associative strength, latent semantic similarity, priming effect in standardized and raw reaction times). We illustrate the types of questions that can be addressed via the Semantic Priming Project. These data represent the largest behavioral database on semantic priming and are available to researchers to aid in selecting stimuli, testing theories, and reducing potential confounds in their studies.

  1. Inactivation of the ribonucleoside triphosphate reductase from Lactobacillus leichmannii by 2 prime -chloro-2 prime -deoxyuridine 5 prime -triphosphate: A 3 prime -2 prime hydrogen transfer during the formation of 3 prime -keto-2 prime -deoxyuridine 5 prime -triphosphate

    SciTech Connect

    Ashley, G.W.; Harris, G.; Stubbe, J. )

    1988-10-04

    The ribonucleoside triphosphate reductase of Lactobacillus leichmannii converts the substrate analogue 2{prime}-chloro-2{prime}-deoxyuridine 5{prime}-triphosphate (C1UTP) into a mixture of 2{prime}-deoxyuridine triphosphate (dUTP) and the unstable product 3{prime}-keto-2{prime}-deoxyuridine triphosphate (3{prime}-keto-dUTP). This ketone can be trapped by reduction with NaBH{sub 4}, producing a 4:1 mixture of xylo-dUTP and dUTP. When (3{prime}-{sup 3}H)C1UTP is treated with enzyme in the presence of NaBH{sub 4}, the isomeric deoxyuridines isolated after alkaline phosphatase treatment retained 15% of the {sup 3}H in C1UTP. Degradation of these isomeric nucleosides has established the location of the {sup 3}H in 3{prime}-keto-dUTP as predominantly 2{prime}(S). The xylo-dU had 98.6% of its label at the 2{prime}(S) position and 1.5% at 2{prime}(R). The isolated dU had 89.6% of its label at 2{prime}(S) and 1.4% at 2{prime}(R), with the remaining 9% label inferred to be at the 3{prime}-carbon, this resulting from the direct enzymic production of dUTP. These results are consistent with enzymic production of a 1:1,000 mixture of dUTP and 3{prime}-keto-dUTP, where the 3{prime}-hydrogen of C1UTP is retained at 3{prime} during production of dUTP and is transferred to 2{prime}(S) during production of 3{prime}-keto-dUTP. The implications of these results and the unique role of the cofactor adenosylcobalamin are discussed in terms of reductase being a model for the B{sub 12}-dependent rearrangement reactions.

  2. Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films.

    PubMed

    Huang, Shanjin; Zhang, Yu; Leung, Benjamin; Yuan, Ge; Wang, Gang; Jiang, Hao; Fan, Yingmin; Sun, Qian; Wang, Jianfeng; Xu, Ke; Han, Jung

    2013-11-13

    Nanoporous (NP) gallium nitride (GaN) as a new class of GaN material has many interesting properties that the conventional GaN material does not have. In this paper, we focus on the mechanical properties of NP GaN, and the detailed physical mechanism of porous GaN in the application of liftoff. A decrease in elastic modulus and hardness was identified in NP GaN compared to the conventional GaN film. The promising application of NP GaN as release layers in the mechanical liftoff of GaN thin films and devices was systematically studied. A phase diagram was generated to correlate the initial NP GaN profiles with the as-overgrown morphologies of the NP structures. The fracture toughness of the NP GaN release layer was studied in terms of the voided-space-ratio. It is shown that the transformed morphologies and fracture toughness of the NP GaN layer after overgrowth strongly depends on the initial porosity of NP GaN templates. The mechanical separation and transfer of a GaN film over a 2 in. wafer was demonstrated, which proves that this technique is useful in practical applications.

  3. Nano-clustered Pd catalysts formed on GaN surface for green chemistry

    NASA Astrophysics Data System (ADS)

    Hirayama, Motoi; Ueta, Yukiko; Konishi, Tomoya; Tsukamoto, Shiro

    2011-05-01

    We have succeeded in observing Pd nano-clusters, catalytic prime elements, on a GaN(0 0 0 1) surface by a scanning tunneling microscope for the first time. After the sample was reused, we found that nano-clusters (width: 11 nm, height: 2.2 nm) existed on the surface which still kept the catalytic activity, resulting that the neutral Pd atoms formed the nano-cluster. Moreover, the S-termination contributed to the formation of the dense and flat structure consisting of the Pd nano-clusters.

  4. Largest known twin primes and Sophie Germain primes

    NASA Astrophysics Data System (ADS)

    Indlekofer, Karl-Heinz; Járai, Antal

    The numbers 242206083* 2^38880+-1 are twin primes. The number p=2375063906985* 2^19380-1 is a Sophie Germain prime, i.e. p and 2p+1 are both primes. For p=4610194180515* 2^ 5056-1, the numbers p, p+2 and 2p+1 are all primes.

  5. Ultrafast carrier dynamics in GaN nanorods

    SciTech Connect

    Yang, Chi-Yuan; Chia, Chih-Ta; Chen, Hung-Ying; Gwo, Shangjr; Lin, Kung-Hsuan

    2014-11-24

    We present ultrafast time-resolved optical spectroscopy on GaN nanorods at room temperature. The studied GaN nanorods, with diameters of ∼50 nm and lengths of ∼400 nm, were grown on the silicon substrate. After femtosecond optical pulses excited carriers in the GaN nanorods, the carriers thermalized within a few picoseconds. Subsequently, the electrons are trapped by the surface states on the order of 20 ps. After the surface electric field was reformed in the GaN nanorods, we found the lifetime of the residue carriers in GaN nanorods is longer than 1.7 ns at room temperature, while the lifetime of carriers in GaN thin film is typically a few hundred picoseconds. Our findings indicate that GaN nanorods have higher electrical quality compared with GaN thin film.

  6. "Fell" Primes "Fall", but Does "Bell" Prime "Ball"? Masked Priming with Irregularly-Inflected Primes

    ERIC Educational Resources Information Center

    Crepaldi, Davide; Rastle, Kathleen; Coltheart, Max; Nickels, Lyndsey

    2010-01-01

    Recent masked priming experiments have brought to light a morphological level of analysis that is exclusively based on the orthographic appearance of words, so that it breaks down corner into corn- and -er, as well as dealer into deal- and -er (Rastle, Davis, & New, 2004). Being insensitive to semantic factors, this morpho-orthographic…

  7. Piezotronic Effect in Polarity-Controlled GaN Nanowires.

    PubMed

    Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

    2015-08-25

    Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction.

  8. Prime Retrieval of Motor Responses in Negative Priming

    ERIC Educational Resources Information Center

    Mayr, Susanne; Buchner, Axel; Dentale, Sandra

    2009-01-01

    Three auditory identification experiments were designed to specify the prime-response retrieval model of negative priming (S. Mayr & A. Buchner, 2006), which assumes that the prime response is retrieved in ignored repetition trials and interferes with probe responding. In Experiment 1, shortly before (in Experiment 1A) or after (in Experiment 1B)…

  9. Mechanism of Torrential Rain Associated with the Mei-yu Development during SCSMEX-98

    NASA Technical Reports Server (NTRS)

    Qian, Jian-Hua; Tao, Wei-Kuo; Lau, K.-M.; Starr, David OC. (Technical Monitor)

    2002-01-01

    A case of torrential precipitation process in the Mei-yu front, an Asian monsoon system east to the Tibetan Plateau, is studied with the coupled Penn State University/NCAR MM5 and NASA/GSFC PLACE (Parameterization for Land - Atmosphere - Cloud Exchange) models. Remote and local impacts of water vapor on the location and intensity of Mei-yu precipitation are studied by numerical experiments. Results demonstrate that the water vapor source for this heavy precipitation case in Yangtze river basin is derived mostly from the Bay of Bengal, transported by the southwesterly low-level Jet (LLJ) southeast to the Tibetan Plateau. The moist convection is a critical process in the development and maintenance of the front. The meridional and zonal secondary circulations resulted from Mei-yu condensation heating both act to increase the wind speed in the LLJ. The condensation induced local circulation strengthens the moisture transport in the LLJ, providing a positive feedback to sustain the Mei-yu precipitation system. It is found that local precipitation recycling shifts heavy rain toward the warm side of the Mei-yu front. This shift of rainfall location is due to the pronounced increase of atmospheric moisture and decrease of surface temperature over the warm side of the front.

  10. PCBs, PCQs and PCDFs in blood of Yusho and Yu-Cheng patients

    SciTech Connect

    Kashimoto, T.; Miyata, H.; Fukushima, S.; Kunita, N.; Ohi, G.; Tung, T.

    1985-02-01

    Individual blood samples obtained from Yusho and Yu-Cheng patients who had been poisoned by ingesting contaminated cooking oils, from workers occupationally exposed to polychlorinated biphenyls (PCBs) and from unexposed individuals were analyzed for PCBs, polychlorinated quaterphenyls (PCQs) and polychlorinated dibenzofurans (PCDFs) by gas chromatography and mass spectrometry. PCBs were found in the blood of all samples. PCQs were detected in the blood of 54 or 56 living Yusho patients 11 years after the outbreak, and in all Yu-Cheng patients 6 months following poisoning. These facts indicate that the presence of PCQs in the blood was a good mark of past ingestion of the toxic oil. In the Yu-Cheng cases, PCDFs as well as PCBs and PCQs were detected in all blood samples. These identified isomers have been reported to be remarkably highly toxic compounds, i.e., both the 2,3,7,8-tetrachlorinated and 2,3,4,7,8-pentachlorinated compounds are toxicologically hundreds to thousands of times more toxic than PCB. In view of the high toxicity of PCDFs found in the Yu-Cheng patients' blood, it is concluded that they are the primary causal agents of Yusho as well as of the Yu-Cheng incident.

  11. Masked Repetition Priming Using Magnetoencephalography

    ERIC Educational Resources Information Center

    Monahan, Philip J.; Fiorentino, Robert; Poeppel, David

    2008-01-01

    Masked priming is used in psycholinguistic studies to assess questions about lexical access and representation. We present two masked priming experiments using MEG. If the MEG signal elicited by words reflects specific aspects of lexical retrieval, then one expects to identify specific neural correlates of retrieval that are sensitive to priming.…

  12. Rhizosphere priming: a nutrient perspective

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Rhizosphere priming is the change in decomposition of soil organic matter (SOM) caused by root activity. Rhizosphere priming plays a crucial role in soil carbon (C) dynamics and their response to global climate change. Rhizosphere priming may be affected by soil nutrient availability, but rhizospher...

  13. Musculoskeletal changes in children prenatally exposed to polychlorinated biphenyls and related compounds (Yu-Cheng children)

    SciTech Connect

    Guo, Y.L.; Lin, C.J.; Yao, W.J.; Hsu, C.C. ); Ryan, J.J. )

    1994-01-01

    Fifty-five Yu-Cheng (oil-disease) children born between 1978 and 1985 to mothers who ate PCB-contaminated rice oil in 1978-1979 were studied and compared to age- and sex-matched control subjects in 1991. The children's growth profiles, bone mineral density and soft tissue composition, joint laxity, and serum parathyroid hormone, vitamin D, calcium, alkaline phosphatase, and phosphate were compared. The Yu-Cheng children were 3.1 cm (p < .05) smaller and had less total lean mass and soft tissue mass as compared to the matched control subjects. All other parameters studied were similar in both groups. The shorter height and decreased total lean mass and soft tissue control were only seen in the Yu-Cheng children who were the first born after the ingestion, but not in subsequent children. This was most likely due to decreased body burdens of the PCBs and related contaminants over time in the mothers.

  14. GaN based nanorods for solid state lighting

    SciTech Connect

    Li Shunfeng; Waag, Andreas

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  15. Priming sentence planning.

    PubMed

    Konopka, Agnieszka E; Meyer, Antje S

    2014-09-01

    Sentence production requires mapping preverbal messages onto linguistic structures. Because sentences are normally built incrementally, the information encoded in a sentence-initial increment is critical for explaining how the mapping process starts and for predicting its timecourse. Two experiments tested whether and when speakers prioritize encoding of different types of information at the outset of formulation by comparing production of descriptions of transitive events (e.g., A dog is chasing the mailman) that differed on two dimensions: the ease of naming individual characters and the ease of apprehending the event gist (i.e., encoding the relational structure of the event). To additionally manipulate ease of encoding, speakers described the target events after receiving lexical primes (facilitating naming; Experiment 1) or structural primes (facilitating generation of a linguistic structure; Experiment 2). Both properties of the pictured events and both types of primes influenced the form of target descriptions and the timecourse of formulation: character-specific variables increased the probability of speakers encoding one character with priority at the outset of formulation, while the ease of encoding event gist and of generating a syntactic structure increased the likelihood of early encoding of information about both characters. The results show that formulation is flexible and highlight some of the conditions under which speakers might employ different planning strategies.

  16. Palomar Spectroscopy of 2001 FM129, 2004 FG11, and 2005 YU55.

    NASA Astrophysics Data System (ADS)

    Hicks, M.; Lawrence, K.; Benner, L.

    2010-04-01

    We obtained long-slit CCD spectrograms of the near-Earth asteroids 8254 (2001 FM129), 2004 FG11, and 2005 YU55 using the Palomar 5-m Hale Telescope equipped with the facility dual-channel spectrometer ("Double-Spec") on April 07 2010. 88254 (2001 FM129) and 2004 FG11 have been designated as Potentially Hazardous Asteroids by the Minor Planets Center. 2005 YU55 in noteworthy as a "virtual impactor", with a cumulative Earth-impact probability of 7.4e-6 between 2071 and 2109 (http://neo.jpl.nasa.gov/risk/).

  17. Semantic priming of familiar songs.

    PubMed

    Johnson, Sarah K; Halpern, Andrea R

    2012-05-01

    We explored the functional organization of semantic memory for music by comparing priming across familiar songs both within modalities (Experiment 1, tune to tune; Experiment 3, category label to lyrics) and across modalities (Experiment 2, category label to tune; Experiment 4, tune to lyrics). Participants judged whether or not the target tune or lyrics were real (akin to lexical decision tasks). We found significant priming, analogous to linguistic associative-priming effects, in reaction times for related primes as compared to unrelated primes, but primarily for within-modality comparisons. Reaction times to tunes (e.g., "Silent Night") were faster following related tunes ("Deck the Hall") than following unrelated tunes ("God Bless America"). However, a category label (e.g., Christmas) did not prime tunes from within that category. Lyrics were primed by a related category label, but not by a related tune. These results support the conceptual organization of music in semantic memory, but with potentially weaker associations across modalities.

  18. Nanoscale anisotropic plastic deformation in single crystal GaN.

    PubMed

    Huang, Jun; Xu, Ke; Fan, Ying Min; Niu, Mu Tong; Zeng, Xiong Hui; Wang, Jian Feng; Yang, Hui

    2012-01-01

    Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.PACS: 62.20.fq; 81.05.Ea; 61.72.Lk.

  19. [Cloning and functional analysis of glnB from Azospirillum brasilense Yu62].

    PubMed

    Li, Z H; Chen, S F; Li, J L

    2001-01-01

    The glnB gene of A. brasilense Yu62 was determined in a 3.7 kb EcoRI + PstI fragment. The glnA is located downstream of glnB and an ORF for hypothetical protein is on upstream of glnB. The deduced amino acid sequence of PII encoded by glnB is 71%, 77%, 79% and 69% identical to that of K. pneumoniae, Bradyrhizobium japonicum, Rhizobium leguninosarum and E. coli, respectively. A Km-casette was inserted into BglII site of glnB coding region and GlnB- mutant was obtained by homologous recombination. The GlnB- mutant has lost the nitrogenase activity, i.e.: Nif-. For the functional confirmation of glnB gene, a complementary test was carried out and it was shown that C-glnB(glnB::Km/glnB) can restore the nitrogenase activity. When the recombinant plasmid pVK-II which containined the coding region of glnB was introduced into A. brasilense Yu62 and A. brasilense Yu62 DraT-, respectively, the Yu62-II (containing pVK-II) and draT-II(containing pVK-II) showed higher nitrogenase activity than wild type. These results confirmed that glnB plays an important role in the regulation of nitrogen in A. brasilense.

  20. Self-catalyzed anisotropic growth of GaN spirals

    NASA Astrophysics Data System (ADS)

    Patsha, Avinash; Sahoo, Prasana; Dhara, S.; Tyagi, A. K.

    2012-06-01

    GaN spirals with homogeneous size are grown using chemical-vapor-deposition technique in a self catalytic process. Raman and photoluminescence (PL) studies reveal wurtzite GaN phase. Nucleation of GaN sphere takes place with the agglomeration Ga clusters and simultaneous reaction with NH3. A growth mechanism involving diffusion limited aggregation process initiating supersaturation and subsequent neck formation along with possible role of thermodynamic fluctuation in different crystalline facets of GaN, is described for the anisotropic spiral structures. Temperature dependent PL spectra show strong excitonic emissions along with the presence of free-to-bound transition.

  1. Later Leaders in Education: Roma Gans--Teacher of Teachers.

    ERIC Educational Resources Information Center

    Almy, Millie

    1990-01-01

    Retired teacher Roma Gans is described in terms of her early life and education, early teaching experience, teaching experience at Teachers College, publishing experience, citizenship, and retirement. (DG)

  2. Immediate priming and cognitive aftereffects.

    PubMed

    Huber, David E

    2008-05-01

    Three forced-choice perceptual word identification experiments tested the claim that transitions from positive to negative priming as a function of increasing prime duration are due to cognitive aftereffects. These aftereffects are similar in nature to perceptual aftereffects that produce a negative image due to overexposure and habituation to a stimulus. Each experiment tested critical predictions that come from including habituation in a dynamic neural network with multiple levels of processing. The success of this account in explaining the dynamics of repetition priming, associative-semantic priming, and forward masking effects suggests that habituation is a useful mechanism for reducing source confusion between successively presented stimuli. Implications are considered for visible persistence, repetition blindness, attention-based negative priming, attentional blink, inhibition of return, the negative compatibility effect, affect priming, and flanker preview effects. PMID:18473662

  3. On the fractal distribution of primes and prime-indexed primes by the binary image analysis

    NASA Astrophysics Data System (ADS)

    Cattani, Carlo; Ciancio, Armando

    2016-10-01

    In this paper, the distribution of primes and prime-indexed primes (PIPs) is studied by mapping primes into a binary image which visualizes the distribution of primes. These images show that the distribution of primes (and PIPs) is similar to a Cantor dust, moreover the self-similarity with respect to the order of PIPs (already proven in Batchko (2014)) can be seen as an invariance of the binary images. The index of primes plays the same role of the scale for fractals, so that with respect to the index the distribution of prime-indexed primes is characterized by the self-similarity alike any other fractal. In particular, in order to single out the scale dependence, the PIPs fractal distribution will be evaluated by limiting to two parameters, fractal dimension (δ) and lacunarity (λ), that are usually used to measure the fractal nature. Because of the invariance of the corresponding binary plots, the fractal dimension and lacunarity of primes distribution are invariant with respect to the index of PIPs.

  4. Prime time sexual harrassment.

    PubMed

    Grauerholz, E; King, A

    1997-04-01

    This study explores the explicit and implicit messages of sexual harassment that viewers receive when viewing prime-time television in the US. A content analysis of 48 hours of prime-time television reveals that sexual harassment on television is both highly visible and invisible. Sexual harassment is rendered visible simply by its prominence in these programs. Incidents involving quid-pro-quo harassment and environmental harassment occur with regularity on television. Furthermore, about 84% of the shows studied contained at least one incident of sexual harassment; yet these acts of sexual harassment remained largely invisible because none of the behaviors were labeled as sexual harassment. These incidents are presented in humorous ways, and victims are generally unharmed and very effective at ending the harassment. Although such programs may actually reflect the reality of many women's lives in terms of prevalence of sexual harassment, they perpetuate several myths about sexual harassment, such as that sexual harassment is not serious and that victims should be able to handle the situations themselves. PMID:12294811

  5. Past Tense Route Priming

    PubMed Central

    Cohen-Shikora, Emily R.; Balota, David A.

    2013-01-01

    The present research examined whether lexical (whole word) or more rule-based (morphological constituent) processes can be locally biased by experimental list context in past tense verb inflection. In Experiment 1, younger and older adults completed a past tense inflection task in which list context was manipulated across blocks containing regular past tense verbs (e.g. REACH-REACHED) or irregular past tense verbs (TEACH-TAUGHT). Critical targets, consisting of half regular and half irregular verbs, were embedded within blocks and participants' inflection response latency and accuracy were assessed. The results yielded a cross-over interaction in response latencies. In the regular context there was a robust regularity effect: regular target verbs were conjugated faster than irregular target verbs. In contrast, in the irregular context, irregular target verbs were conjugated faster than regular target verbs. Experiment 2 used the same targets but in the context of either standard nonwords or nonwords ending in “-ED” to test the possibility of a phonological basis for the effect. The effect of context was eliminated. The results support the notion that distinct processes in past tense verb production can be locally biased by list context and, as shown in Experiment 2, this route priming effect was not due to phonological priming. PMID:23291293

  6. Dislocation filtering in GaN nanostructures.

    PubMed

    Colby, Robert; Liang, Zhiwen; Wildeson, Isaac H; Ewoldt, David A; Sands, Timothy D; García, R Edwin; Stach, Eric A

    2010-05-12

    Dislocation filtering in GaN by selective area growth through a nanoporous template is examined both by transmission electron microscopy and numerical modeling. These nanorods grow epitaxially from the (0001)-oriented GaN underlayer through the approximately 100 nm thick template and naturally terminate with hexagonal pyramid-shaped caps. It is demonstrated that for a certain window of geometric parameters a threading dislocation growing within a GaN nanorod is likely to be excluded by the strong image forces of the nearby free surfaces. Approximately 3000 nanorods were examined in cross-section, including growth through 50 and 80 nm diameter pores. The very few threading dislocations not filtered by the template turn toward a free surface within the nanorod, exiting less than 50 nm past the base of the template. The potential active region for light-emitting diode devices based on these nanorods would have been entirely free of threading dislocations for all samples examined. A greater than 2 orders of magnitude reduction in threading dislocation density can be surmised from a data set of this size. A finite element-based implementation of the eigenstrain model was employed to corroborate the experimentally observed data and examine a larger range of potential nanorod geometries, providing a simple map of the different regimes of dislocation filtering for this class of GaN nanorods. These results indicate that nanostructured semiconductor materials are effective at eliminating deleterious extended defects, as necessary to enhance the optoelectronic performance and device lifetimes compared to conventional planar heterostructures. PMID:20397703

  7. A Study of Relative-Position Priming with Superset Primes

    ERIC Educational Resources Information Center

    Van Assche, Eva; Grainger, Jonathan

    2006-01-01

    Four lexical decision experiments are reported that use the masked priming paradigm to study the role of letter position information in orthographic processing. In Experiments 1 and 2, superset primes, formed by repetition of 1 or 2 letters of the target (e.g., jusstice-JUSTICE) or by insertion of 1 or 2 unrelated letters (e.g., juastice-JUSTICE),…

  8. 5[prime] to 3[prime] nucleic acid synthesis using 3[prime]-photoremovable protecting group

    DOEpatents

    Pirrung, M.C.; Shuey, S.W.; Bradley, J.C.

    1999-06-01

    The present invention relates, in general, to a method of synthesizing a nucleic acid, and, in particular, to a method of effecting 5[prime] to 3[prime] nucleic acid synthesis. The method can be used to prepare arrays of oligomers bound to a support via their 5[prime] end. The invention also relates to a method of effecting mutation analysis using such arrays. The invention further relates to compounds and compositions suitable for use in such methods.

  9. Attentional priming releases crowding.

    PubMed

    Kristjánsson, Arni; Heimisson, Pétur Rúnar; Róbertsson, Gunnar Freyr; Whitney, David

    2013-10-01

    Views of natural scenes unfold over time, and objects of interest that were present a moment ago tend to remain present. While visual crowding places a fundamental limit on object recognition in cluttered scenes, most studies of crowding have suffered from the limitation that they typically involved static scenes. The role of temporal continuity in crowding has therefore been unaddressed. We investigated intertrial effects upon crowding in visual scenes, showing that crowding is considerably diminished when objects remain constant on consecutive visual search trials. Repetition of both the target and distractors decreases the critical distance for crowding from flankers. More generally, our results show how object continuity through between-trial priming releases objects that would otherwise be unidentifiable due to crowding. Crowding, although it is a significant bottleneck on object recognition, can be mitigated by statistically likely temporal continuity of the objects. Crowding therefore depends not only on what is momentarily present, but also on what was previously attended.

  10. Exodus: Prime Mover

    NASA Technical Reports Server (NTRS)

    Bauer, Nikkol; Conwell, Pete; Johnson, Matt; Shields, Wendy; Thornton, Tim; Tokarz, Rob; Mcmanus, Rich

    1992-01-01

    The Exodus Prime Mover is an overnight package delivery aircraft designed to serve the Northern Hemisphere of Aeroworld. The preliminary design goals originated from the desire to produce a large profit. The two main driving forces throughout the design process were first to reduce the construction man-hours by simplifying the aircraft design, thereby decreasing the total production cost of the aircraft. The second influential factor affecting the design was minimizing the fuel cost during cruise. The lowest fuel consumption occurs at a cruise velocity of 30 ft/s. Overall, it was necessary to balance the economic benefits with the performance characteristics in order to create a profitable product that meets all specified requirements and objectives.

  11. Investigating Home Primes and Their Families

    ERIC Educational Resources Information Center

    Herman, Marlena; Schiffman, Jay

    2014-01-01

    The process of prime factor splicing to generate home primes raises opportunity for conjecture and exploration. The notion of "home primes" is relatively new in the chronicle of mathematics. Heleen (1996-97) first described a procedure called "prime factor splicing" (PFS). The exploration of home primes is interesting and…

  12. P-type doping of GaN

    SciTech Connect

    Wong, R.K.

    2000-04-10

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  13. GaN Electronics For High Power, High Temperature Applications

    SciTech Connect

    PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHU,S.N.G.

    2000-06-12

    A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

  14. Priming Macho Attitudes and Emotions.

    ERIC Educational Resources Information Center

    Beaver, Erik D.; And Others

    1992-01-01

    Investigated the effects of reading one of four priming stimuli stories (control, consenting sex, rape, or family) on males' evaluations of, and emotional reactions to, two videotaped date-rape scenarios. Results supported the concepts of a macho personality and revealed interactive effects for both the rape and family prime. (RJM)

  15. Rhizosphere priming: a nutrient perspective.

    PubMed

    Dijkstra, Feike A; Carrillo, Yolima; Pendall, Elise; Morgan, Jack A

    2013-01-01

    Rhizosphere priming is the change in decomposition of soil organic matter (SOM) caused by root activity. Rhizosphere priming plays a crucial role in soil carbon (C) dynamics and their response to global climate change. Rhizosphere priming may be affected by soil nutrient availability, but rhizosphere priming itself can also affect nutrient supply to plants. These interactive effects may be of particular relevance in understanding the sustained increase in plant growth and nutrient supply in response to a rise in atmospheric CO2 concentration. We examined how these interactions were affected by elevated CO2 in two similar semiarid grassland field studies. We found that an increase in rhizosphere priming enhanced the release of nitrogen (N) through decomposition of a larger fraction of SOM in one study, but not in the other. We postulate that rhizosphere priming may enhance N supply to plants in systems that are N limited, but that rhizosphere priming may not occur in systems that are phosphorus (P) limited. Under P limitation, rhizodeposition may be used for mobilization of P, rather than for decomposition of SOM. Therefore, with increasing atmospheric CO2 concentrations, rhizosphere priming may play a larger role in affecting C sequestration in N poor than in P poor soils. PMID:23908649

  16. Rhizosphere priming: a nutrient perspective

    PubMed Central

    Dijkstra, Feike A.; Carrillo, Yolima; Pendall, Elise; Morgan, Jack A.

    2013-01-01

    Rhizosphere priming is the change in decomposition of soil organic matter (SOM) caused by root activity. Rhizosphere priming plays a crucial role in soil carbon (C) dynamics and their response to global climate change. Rhizosphere priming may be affected by soil nutrient availability, but rhizosphere priming itself can also affect nutrient supply to plants. These interactive effects may be of particular relevance in understanding the sustained increase in plant growth and nutrient supply in response to a rise in atmospheric CO2 concentration. We examined how these interactions were affected by elevated CO2 in two similar semiarid grassland field studies. We found that an increase in rhizosphere priming enhanced the release of nitrogen (N) through decomposition of a larger fraction of SOM in one study, but not in the other. We postulate that rhizosphere priming may enhance N supply to plants in systems that are N limited, but that rhizosphere priming may not occur in systems that are phosphorus (P) limited. Under P limitation, rhizodeposition may be used for mobilization of P, rather than for decomposition of SOM. Therefore, with increasing atmospheric CO2 concentrations, rhizosphere priming may play a larger role in affecting C sequestration in N poor than in P poor soils. PMID:23908649

  17. Semantic priming from crowded words.

    PubMed

    Yeh, Su-Ling; He, Sheng; Cavanagh, Patrick

    2012-06-01

    Vision in a cluttered scene is extremely inefficient. This damaging effect of clutter, known as crowding, affects many aspects of visual processing (e.g., reading speed). We examined observers' processing of crowded targets in a lexical decision task, using single-character Chinese words that are compact but carry semantic meaning. Despite being unrecognizable and indistinguishable from matched nonwords, crowded prime words still generated robust semantic-priming effects on lexical decisions for test words presented in isolation. Indeed, the semantic-priming effect of crowded primes was similar to that of uncrowded primes. These findings show that the meanings of words survive crowding even when the identities of the words do not, suggesting that crowding does not prevent semantic activation, a process that may have evolved in the context of a cluttered visual environment.

  18. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    NASA Astrophysics Data System (ADS)

    Choudhary, B. S.; Singh, A.; Tanwar, S.; Tyagi, P. K.; Kumar, M. Senthil; Kushvaha, S. S.

    2016-04-01

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  19. The Near-Earth Encounter of Asteroid 308635 (2005 YU55): Thermal IR Observations

    NASA Technical Reports Server (NTRS)

    Lim, Lucy F.; Emery, J. P.; Moskovitz, N. A.; Busch, N. W.; Yang, B.; Granvik, M.

    2012-01-01

    The near-Earth approach (0.00217 AU, or 0.845 lunar distances) of the C-type asteroid 308635 (2005 YU55) in November 2011 presented a rare opportunity for detailed observations of a low-albedo NEA in this size range. As part of a multi-telescope campaign to measure visible and infrared spectra and photometry, we obtained mid-infrared (approx. 8 to 22 micron) photometry and spectroscopy of 2005 YU55 using Michelle on the Gemini North telescope on UT November 9 and 10,2011. An extensive radar campaign together with optical light-curves established the rotation state of YU55. In addition, the radar imaging resulted in a shape model for the asteroid, detection of numerous boulders on its surface, and a preliminary estimate of its equatorial diameter at 380 +/- 20 m. In a preliminary analysis, applying the radar and lightcurve-derived parameters to a rough-surface thermophysical model fit to the Gemini/Michelle thermal emission photometry results in a thermal inertia range of approximately 500 to 1500 J/sq m/0.5s/K, with the low-thermal-inertia solution corresponding to the small end of the radar size range and vice versa. Updates to these results will be presented and modeling of the thermal contribution to the measured near-infrared spectra from Palomar/Triplespec and IRTF/SpeX will also be discussed.

  20. GaN: Defect and Device Issues

    SciTech Connect

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  1. Space Place Prime

    NASA Technical Reports Server (NTRS)

    Fitzpatrick, Austin J.; Novati, Alexander; Fisher, Diane K.; Leon, Nancy J.; Netting, Ruth

    2013-01-01

    Space Place Prime is public engagement and education software for use on iPad. It targets a multi-generational audience with news, images, videos, and educational articles from the Space Place Web site and other NASA sources. New content is downloaded daily (or whenever the user accesses the app) via the wireless connection. In addition to the Space Place Web site, several NASA RSS feeds are tapped to provide new content. Content is retained for the previous several days, or some number of editions of each feed. All content is controlled on the server side, so features about the latest news, or changes to any content, can be made without updating the app in the Apple Store. It gathers many popular NASA features into one app. The interface is a boundless, slidable- in-any-direction grid of images, unique for each feature, and iconized as image, video, or article. A tap opens the feature. An alternate list mode presents menus of images, videos, and articles separately. Favorites can be tagged for permanent archive. Face - book, Twitter, and e-mail connections make any feature shareable.

  2. GaN for LED applications

    NASA Technical Reports Server (NTRS)

    Pankove, J. I.

    1973-01-01

    In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

  3. Prime Diagnosticity in Short-Term Repetition Priming: Is Primed Evidence Discounted, Even when It Reliably Indicates the Correct Answer?

    ERIC Educational Resources Information Center

    Weidemann, Christoph T.; Huber, David E.; Shiffrin, Richard M.

    2008-01-01

    The authors conducted 4 repetition priming experiments that manipulated prime duration and prime diagnosticity in a visual forced-choice perceptual identification task. The strength and direction of prime diagnosticity produced marked effects on identification accuracy, but those effects were resistant to subsequent changes of diagnosticity.…

  4. GaN hexagonal pyramids formed by a photo-assisted chemical etching method

    NASA Astrophysics Data System (ADS)

    Zhang, Shi-Ying; Xiu, Xiang-Qian; Hua, Xue-Mei; Xie, Zi-Li; Liu, Bin; Chen, Peng; Han, Ping; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2014-05-01

    A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a convenient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed analysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.

  5. Test Sequence Priming in Recognition Memory

    ERIC Educational Resources Information Center

    Johns, Elizabeth E.; Mewhort, D. J. K.

    2009-01-01

    The authors examined priming within the test sequence in 3 recognition memory experiments. A probe primed its successor whenever both probes shared a feature with the same studied item ("interjacent priming"), indicating that the study item like the probe is central to the decision. Interjacent priming occurred even when the 2 probes did not…

  6. No priming for global motion in crowding.

    PubMed

    Pavan, Andrea; Gall, Martin G; Manassi, Mauro; Greenlee, Mark W

    2015-01-01

    There is psychophysical evidence that low-level priming, e.g., from oriented gratings, as well as high-level semantic priming, survives crowding. We investigated priming for global translational motion in crowded and noncrowded conditions. The results indicated that reliable motion priming occurs in the noncrowded condition, but motion priming does not survive crowding. Crowding persisted despite variations in the direction of the flankers with respect to the prime's direction. Motion priming was still absent under crowding when 85% of the flankers moved in the same direction as the prime. Crowding also persisted despite variations in the speed of the flankers relative to the prime even when the flankers' speed was four times slower than the speed of the prime. However, a priming effect was evident when the prime's spatial location was precued and its distance to the flankers increased, suggesting a release from crowding. These results suggest that transient attention induced by precueing the spatial location of the prime may improve subjects' ability to discriminate its direction. Spatial cueing could act to decrease the integration field, thereby diminishing the influence of nearby distracters. In an additional experiment in which we used fewer flankers, we found a priming effect under conditions in which the interelement distance varied between flankers and prime. Overall, the results suggest that motion priming is strongly affected by crowding, but transient attention can partially retrieve such facilitation.

  7. An accrual model for primed digit classification.

    PubMed

    Izquierdo, E; Saal, A; Page, R

    2010-03-01

    This article describes a chronometric experiment of digit classification with masked primes. EEG experiments have shown that the subliminal prime activates the cortex prior to the target signal, thusly modifying the response: Congruent primes lead to faster correct answers, while incongruent primes result in slower response. It is noticed that incorrect answers show an inverted effect: A congruent prime inhibits incorrect answers, and the reverse for incongruent primes. Within the evidence accrual paradigm, it is suggested that the prime activity in the motor cortex effectively behaves as a shift in the decision threshold. This model assumption is consistent with our experimental findings. The correct and incorrect answers and the error percentage are discussed.

  8. Priming mortality salience: supraliminal, subliminal and "double-death" priming techniques.

    PubMed

    Mahoney, Melissa B; Saunders, Benjamin A; Cain, Nicole M

    2014-01-01

    The study examined whether successively presented subliminal and supraliminal morality salience primes ("double death" prime) would have a stronger influence on death thought accessibility than subliminal or supraliminal primes alone. A between-subjects 2 (subliminal prime/control) × 2 (supraliminal prime/control) design was used. The supraliminal prime prompted participants to answer questions about death. For the subliminal prime, the word death was presented outside of awareness. Both priming techniques differed significantly from a control in ability to elicit mortality salience. There was an interactive influence of both primes. Implications for unconscious neutral networks relating to death are discussed. PMID:24592974

  9. Priming mortality salience: supraliminal, subliminal and "double-death" priming techniques.

    PubMed

    Mahoney, Melissa B; Saunders, Benjamin A; Cain, Nicole M

    2014-01-01

    The study examined whether successively presented subliminal and supraliminal morality salience primes ("double death" prime) would have a stronger influence on death thought accessibility than subliminal or supraliminal primes alone. A between-subjects 2 (subliminal prime/control) × 2 (supraliminal prime/control) design was used. The supraliminal prime prompted participants to answer questions about death. For the subliminal prime, the word death was presented outside of awareness. Both priming techniques differed significantly from a control in ability to elicit mortality salience. There was an interactive influence of both primes. Implications for unconscious neutral networks relating to death are discussed.

  10. GaN quantum dots by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Daudin, B.; Adelmann, C.; Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Fossard, F.; Rouvière, J. L.

    2004-03-01

    The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.

  11. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

  12. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  13. GaN grown on nano-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

    2015-04-01

    High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

  14. Nanoheteroepitaxial growth of GaN on Si nanopillar arrays

    NASA Astrophysics Data System (ADS)

    Hersee, S. D.; Sun, X. Y.; Wang, X.; Fairchild, M. N.; Liang, J.; Xu, J.

    2005-06-01

    Nanoheteroepitaxial growth of GaN by metal-organic chemical-vapor deposition on dense arrays of (111) Si nanopillars has been investigated. Scanning electron microscopy, cross-sectional transmission electron microscopy, and electron-diffraction analysis of 0.15-μm-thick GaN layers indicate single-crystal films. Most of the mismatch defects were in-plane stacking faults and the threading dislocation concentration was <108cm-2 at the interface and decreased away from the interface. High-resolution transmission electron microscopy indicated that grain-boundary defects could heal and were followed by high quality, single-crystal GaN. Facetted voids were also present at the GaN /Si interface and are believed to be an additional strain-energy reduction mechanism. The unusual defect behavior in these samples appears to be related to the high compliance of the nanopillar silicon substrate.

  15. Epitaxy growth kinetics of GaN films

    NASA Astrophysics Data System (ADS)

    Wu, Bei; Ma, Ronghui; Zhang, Hui

    2003-03-01

    Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes and lasers. A GaN crystal can be grown from the vapor phase by either evaporation of Gallium (Ga) metal or sublimation of GaN powder in ammonia (NH 3) atmosphere at a temperature-controlled growth furnace. In this paper, an integrated GaN growth model using a sublimation growth model has been developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. For the growth rate, the effects of the gas-flow rate, source temperature, temperature difference, and the gap width of the growth cell on the growth process have been studied.

  16. Repeated Masked Category Primes Interfere With Related Exemplars: New Evidence for Negative Semantic Priming

    ERIC Educational Resources Information Center

    Wentura, Dirk; Frings, Christian

    2005-01-01

    In 4 experiments, the authors found evidence for negatively signed masked semantic priming effects (with category names as primes and exemplars as targets) using a new technique of presenting the masked primes. By rapidly interchanging prime and mask during the stimulus onset asynchrony, they increased the total prime exposure to a level…

  17. The Intervenor Effect in Masked Priming: How Does Masked Priming Survive across an Intervening Word?

    ERIC Educational Resources Information Center

    Forster, Kenneth I.

    2009-01-01

    Four masked priming experiments are reported investigating the effect of inserting an unrelated word between the masked prime and the target. When the intervening word is visible, identity priming is reduced to the level of one-letter-different form priming, but form priming is largely unaffected. However, when the intervening word is itself…

  18. Novel high frequency devices with graphene and GaN

    NASA Astrophysics Data System (ADS)

    Zhao, Pei

    This work focuses on exploring new materials and new device structures to develop novel devices that can operate at very high speed. In chapter 2, the high frequency performance limitations of graphene transistor with channel length less than 100 nm are explored. The simulated results predict that intrinsic cutoff frequency fT of graphene transistor can be close to 2 THz at 15 nm channel length. In chapter 3, we explored the possibility of developing a 2D materials based vertical tunneling device. An analytical model to calculate the channel potentials and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The symmetric resonant peak in SymFET is a good candidate for high-speed analog applications. Rest of the work focuses on Gallium Nitride (GaN), several novel device concepts based on GaN heterostructure have been proposed for high frequency and high power applications. In chapter 4, we compared the performance of GaN Schottky diodes on bulk GaN substrates and GaN-on-sapphire substrates. In addition, we also discussed the lateral GaN Schottky diode between metal/2DEGs. The advantage of lateral GaN Schottky diodes is the intrinsic cutoff frequency is in the THz range. In chapter 5, a GaN Heterostructure barrier diode (HBD) is designed using the polarization charge and band offset at the AlGaN/GaN heterojunction. The polarization charge at AlGaN/GaN interface behaves as a delta-doping which induces a barrier without any chemical doping. The IV characteristics can be explained by the barrier controlled thermionic emission current. GaN HBDs can be directly integrated with GaN HEMTs, and serve as frequency multipliers or mixers for RF applications. In chapter 6, a GaN based negative effective mass oscillator (NEMO) is proposed. The current in NEMO is estimated under the ballistic limits. Negative differential resistances (NDRs) can be observed with more than 50% of the injected electrons occupied the negative

  19. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde

  20. Growth and development of permanent teeth germ of transplacental Yu-Cheng babies in Taiwan

    SciTech Connect

    Lan, Shoujen; Yen, Yeayin; Ko, Yingchin; Chen, Engrin )

    1989-06-01

    This paper is intended to present a study of transplacental Yu-Cheng babies in Taiwan. The focus of the study is to demonstrate how a contaminated food source can affect the growth and development of permanent teeth germ in children. A sporadic outbreak of a peculiar skin disease was reported in Japan in October of 1968. An epidemiological study revealed the outbreak of this disease was caused by contaminated Kanemi rice oil. This episode of rice oil poisoned with polychlorinated biphenyls (PCB) was the first reported outbreak of PCB poisoning in the world. A second episode occurred in central Taiwan eleven years after the Japanese episode. Registered data from the Taiwan Provincial Government Health Department reported 1,843 cases in 1980. Of this group, more than 800 women were child-bearing age and most of these women would or soon would be married and pregnant. The offsprings of these women were in danger, because it has been proven that PCB intoxication could affect the fetus. These babies, only contaminated through the placenta, are called PCB transplacental Yusho babies in Japan and PCB transplacental Yu-Cheng babies in Taiwan. Babies with PCB poisoning could have Fetal PCB syndrome (FPS) and may have retarded eruption of permanent teeth and other anomalies such as reduced numbers of teeth and abnormal shaped roots. The study of transplacental Yu-Cheng babies is an important public health issue for Taiwan. Although there may be other issues, this study focuses only on the growth and development of permanent teeth of those babies affected by PCB transplacental contamination.

  1. Medical problems requiring mountain rescues from 1985 to 2007 in Yu-Shan National Park, Taiwan.

    PubMed

    Wang, Shih-Hao; Hsu, Tai-Yi; Kuan, Jen-Tse; Chen, Jih-Chang; Kao, Wei-Fong; Chiu, Te-Fa; Chen, Yu-Cheng; Chen, Hang-Cheng

    2009-01-01

    Wang, Shih-Hao(1,2) Tai-Yi Hsu,(1,2) Jen-Tse Kuan,(1,2) Jih-Chang Chen,(1,2) Wei-Fong Kao,(3) Te-Fa Chiu,(1,2) Yu-Cheng Chen,(1,2) and Hang-Cheng Chen.(1,2) Medical problems requiring mountain rescues from 1985 to 2007 in Yu-Shan National Park, Taiwan. High Alt. Med Biol. 10:77-82, 2009.-Medical problems requiring mountain rescue in densely populated and low-latitude locations like Taiwan have rarely been studied or discussed. The purpose of this research was to examine mountain-rescue operations that occurred in Yu-Shan National Park Taiwan from 1985 to 2007. Of 186 mountain-rescue operations, 128 involved medical problems (illnesses or injuries). Of the medical problems, 62% involved trauma and 41% involved illness. Ninety-nine ground rescues, 14 helicopter rescues, 38 combination ground and helicopter rescues, and 20 rescues using unclear methods were conducted, and the remaining 15 rescue operations did not involve visitors. In the 186 rescue operations, 330 visitors were rescued, 240 of them survived, 66 were dead, and 24 had an unclear outcome. Factors that affected the type of injury or the probability of survival included the activity, altitude, composition of the visitor group, weather, and occurrence of natural disasters. Mountain-rescue operations in which both ground and helicopter rescue were utilized were more successful. Our retrospective findings indicate that wilderness emergency services should have the capability of performing rescues in rugged terrain and be flexible in their approach to any situation arising in mountainous regions; proper training of onboard helicopter medical personnel is also necessary. In conclusion, we recommend setting up a standard system for reporting mountain- rescue operations, with statistics compiled annually.

  2. [Textual research on Guang dong xin yu (New Sayings of Guangdong) quoted in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica].

    PubMed

    Zhang, Ruixian; Zhang, Wei; Li, Jian; Liang, Fei

    2014-05-01

    Altogether 15 terms for Guang dong xin yu (New Sayings of Guangdong) were used in Ben cao gang mu shi yi (Supplements to Compendium of Materia Medica), including Yue yu (Cantonese sayings), Chong yu (Sayings from Insect Drug), Jie yu (Sayings from Crustacean Drug), Xin yu (New Sayings), Yue hai xiang yu (Fragrant Sayings from Cantonese Region), Yue zhi mu yu (Sayings from Plants in Cantonese Annals), Guang dong suo yu (Trivial Sayings from Guangdong), Yue shan lu (Records of Cantonese Mountains), Yue lu (Cantonese Records), Jiao guang lu (Joint Guangdong Records), Yue cao zhi (Records of Cantonese Grasses), Guang guo lu (Records of Guangdong Fruits), Nan yue suo ji (Trivial Records of Southern Canton), Guang zhi (Guangdong Records), Yue zhi (Cantonese Records) etc. dealing with 57 sorts of drugs (with individual overlapping ones), the author of Xin yu was Qu Dajun, a surviving fogy of the Ming Dynasty actively involved in the activities to restore the old dynasty and resist the Qing Dynasty, and was persecuted in the literary inquisition in which his works were burnt so that Zhao Xuemin, when quoting his texts, had to go in a roundabout way. PMID:25208840

  3. GaN Technology for Power Electronic Applications: A Review

    NASA Astrophysics Data System (ADS)

    Flack, Tyler J.; Pushpakaran, Bejoy N.; Bayne, Stephen B.

    2016-06-01

    Power semiconductor devices based on silicon (Si) are quickly approaching their limits, set by fundamental material properties. In order to address these limitations, new materials for use in devices must be investigated. Wide bandgap materials, such as silicon carbide (SiC) and gallium nitride (GaN) have suitable properties for power electronic applications; however, fabrication of practical devices from these materials may be challenging. SiC technology has matured to point of commercialized devices, whereas GaN requires further research to realize full material potential. This review covers fundamental material properties of GaN as they relate to Si and SiC. This is followed by a discussion of the contemporary issues involved with bulk GaN substrates and their fabrication and a brief overview of how devices are fabricated, both on native GaN substrate material and non-native substrate material. An overview of current device structures, which are being analyzed for use in power switching applications, is then provided; both vertical and lateral device structures are considered. Finally, a brief discussion of prototypes currently employing GaN devices is given.

  4. High nitrogen pressure solution growth of GaN

    NASA Astrophysics Data System (ADS)

    Bockowski, Michal

    2014-10-01

    Results of GaN growth from gallium solution under high nitrogen pressure are presented. Basic of the high nitrogen pressure solution (HNPS) growth method is described. A new approach of seeded growth, multi-feed seed (MFS) configuration, is demonstrated. The use of two kinds of seeds: free-standing hydride vapor phase epitaxy GaN (HVPE-GaN) obtained from metal organic chemical vapor deposition (MOCVD)-GaN/sapphire templates and free-standing HVPE-GaN obtained from the ammonothermally grown GaN crystals, is shown. Depending on the seeds’ structural quality, the differences in the structural properties of pressure grown material are demonstrated and analyzed. The role and influence of impurities, like oxygen and magnesium, on GaN crystals grown from gallium solution in the MFS configuration is presented. The properties of differently doped GaN crystals are discussed. An application of the pressure grown GaN crystals as substrates for electronic and optoelectronic devices is reported.

  5. Synthesis of p-type GaN nanowires.

    PubMed

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-09-21

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

  6. Effect of photocatalytic oxidation technology on GaN CMP

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-01-01

    GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO2, SnO2, and Fe2O3) are used as catalysts and added to the H2O2-SiO2-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH- and H2O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H2O2-SiO2-based polishing system combined with catalysts are improved significantly, especially when using TiO2, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO2 is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.

  7. GaN resistive hydrogen gas sensors

    NASA Astrophysics Data System (ADS)

    Yun, Feng; Chevtchenko, Serguei; Moon, Yong-Tae; Morkoç, Hadis; Fawcett, Timothy J.; Wolan, John T.

    2005-08-01

    GaN epilayers grown by organometallic vapor phase epitaxy have been used to fabricate resistive gas sensors with a pair of planar ohmic contacts. Detectible sensitivity to H2 gas for a wide range of gas mixtures in an Ar ambient has been realized; the lowest concentration tested is ˜0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of the signal is observed up to 100% H2 flow. Real-time response to H2 shows a clear and sharp response with no memory effects during the ramping cycles of H2 concentration. The change in current at a fixed voltage to hydrogen was found to change with sensor geometry. This appears to be consistent with a surface-adsorption-induced change of conductivity; a detailed picture of the gas sensing mechanism requires further systematic studies.

  8. [Cloning sequencing and expression pattern, functional analysis of nifA gene in Azospirillum brasilense Yu62].

    PubMed

    Wang, J; Chen, S; Ma, L; Li, J

    2001-12-01

    The nifA gene of Azospirillum brasilense Yu62 was cloned and sequenced. The expression of nifA gene was investigated in wild type strain Azospirillum brasilense Yu62. The results show that expression of nifA gene is not repressed by ammounium and oxygen completely. But the expression of Yu62 nifA gene is different from that of strain Sp7 nifA gene. Expression of Yu62 nifA seems more sensitive to oxygen than that of Sp7 nifA which shows the highest expression in condition of aerobic, while the Yu62 nifA gene shows the highest expression in the condition of microaerobic. The regulation of NifA protein activity by ammonia and oxygen was investigated. Results showed that the NifA protein is repressed by ammonia, 1 mmol/L NH4Cl can inhibit activity of NifA protein completely. Oxygen concentration affects activity of NifA protein. NifA protein is highly active in 0.4%-0.5% O2.

  9. Structural Priming: A Critical Review

    PubMed Central

    Pickering, Martin J.; Ferreira, Victor S.

    2009-01-01

    Repetition is a central phenomenon of behavior, and researchers make extensive use of it to illuminate psychological functioning. In the language sciences, a ubiquitous form of such repetition is structural priming, a tendency to repeat or better process a current sentence because of its structural similarity to a previously experienced (“prime”) sentence (Bock, 1986). The recent explosion of research in structural priming has made it the dominant means of investigating the processes involved in the production (and increasingly, comprehension) of complex expressions such as sentences. This review considers its implications for the representation of syntax and the mechanisms of production, comprehension, and their relationship. It then addresses the potential functions of structural priming, before turning to its implications for first language acquisition, bilingualism, and aphasia We close with theoretical and empirical recommendations for future investigations. PMID:18444704

  10. Priming in Systemic Plant Immunity

    SciTech Connect

    Jung, Ho Won; Tschaplinski, Timothy J; Wang, Lin; Glazebrook, Jane; Greenberg, Jean T.

    2009-01-01

    Upon local infection, plants possess inducible systemic defense responses against their natural enemies. Bacterial infection results in the accumulation to high levels of the mobile metabolite C9-dicarboxylic acid azelaic acid in the vascular sap of Arabidopsis. Azelaic acid confers local and systemic resistance against Pseudomonas syringae. The compound primes plants to strongly accumulate salicylic acid (SA), a known defense signal, upon infection. Mutation of a gene induced by azelaic acid (AZI1) results in the specific loss in plants of systemic immunity triggered by pathogen or azelaic acid and of the priming of SA induction. AZI1, a predicted secreted protein, is also important for generating vascular sap that confers disease resistance. Thus, azelaic acid and AZI1 comprise novel components of plant systemic immunity involved in priming defenses.

  11. Role of the ganSPQAB Operon in Degradation of Galactan by Bacillus subtilis.

    PubMed

    Watzlawick, Hildegard; Morabbi Heravi, Kambiz; Altenbuchner, Josef

    2016-10-15

    Bacillus subtilis possesses different enzymes for the utilization of plant cell wall polysaccharides. This includes a gene cluster containing galactan degradation genes (ganA and ganB), two transporter component genes (ganQ and ganP), and the sugar-binding lipoprotein-encoding gene ganS (previously known as cycB). These genes form an operon that is regulated by GanR. The degradation of galactan by B. subtilis begins with the activity of extracellular GanB. GanB is an endo-β-1,4-galactanase and is a member of glycoside hydrolase (GH) family 53. This enzyme was active on high-molecular-weight arabinose-free galactan and mainly produced galactotetraose as well as galactotriose and galactobiose. These galacto-oligosaccharides may enter the cell via the GanQP transmembrane proteins of the galactan ABC transporter. The specificity of the galactan ABC transporter depends on the sugar-binding lipoprotein, GanS. Purified GanS was shown to bind galactotetraose and galactotriose using thermal shift assay. The energy for this transport is provided by MsmX, an ATP-binding protein. The transported galacto-oligosaccharides are further degraded by GanA. GanA is a β-galactosidase that belongs to GH family 42. The GanA enzyme was able to hydrolyze short-chain β-1,4-galacto-oligosaccharides as well as synthetic β-galactopyranosides into galactose. Thermal shift assay as well as electrophoretic mobility shift assay demonstrated that galactobiose is the inducer of the galactan operon regulated by GanR. DNase I footprinting revealed that the GanR protein binds to an operator overlapping the -35 box of the σ(A)-type promoter of Pgan, which is located upstream of ganS IMPORTANCE: Bacillus subtilis is a Gram-positive soil bacterium that utilizes different types of carbohydrates, such as pectin, as carbon sources. So far, most of the pectin degradation systems and enzymes have been thoroughly studied in B. subtilis Nevertheless, the B. subtilis utilization system of galactan, which is

  12. The Affective Regulation of Cognitive Priming

    PubMed Central

    Storbeck, Justin; Clore, Gerald L.

    2008-01-01

    Semantic and affective priming are classic effects observed in cognitive and social psychology, respectively. We discovered that affect regulates such priming effects. In Experiment 1, positive and negative moods were induced prior to one of three priming tasks; evaluation, categorization, or lexical decision. As predicted, positive affect led to both affective priming (evaluation task) and semantic priming (category and lexical decision tasks). However, negative affect inhibited such effects. In Experiment 2, participants in their natural affective state completed the same priming tasks as in Experiment 1. As expected, affective priming (evaluation task) and category priming (categorization and lexical decision tasks) were observed in such resting affective states. Hence, we conclude that negative affect inhibits semantic and affective priming. These results support recent theoretical models, which suggest that positive affect promotes associations among strong and weak concepts, and that negative affect impairs such associations (Kuhl, 2000; Clore & Storbeck, 2006). PMID:18410195

  13. Oligomerizations of deoxyadenosine bis-phosphates and of their 3-prime-5-prime, 3-prime-3-prime, and 5-prime-5-prime dimers - Effects of a pyrophosphate-linked, poly(T) analog

    NASA Technical Reports Server (NTRS)

    Visscher, J.; Bakker, C. G.; Schwartz, Alan W.

    1990-01-01

    The effect of a 3-prime-5-prime pyrophosphate-linked oligomer of pTp on oligomerizations of pdAp and of its 3-prime-5-prime, 3-prime-3-prime, and 5-prime-5-prime dimers was investigated, using HPLC to separate the reaction mixtures; peak detection was by absorbance monitoring at 254 nm. It was expected that the dimers would form stable complexes with the template, with the degree of stability depending upon the internal linkage of each dimer. It was found that, although the isomers differ substantially in their oligomerization behavior in the absence of template, the analog-template catalyzes the oligomerization to about the same extent in all three cases.

  14. Phenolic component profiles of mustard greens, yu choy, and 15 other brassica vegetables.

    PubMed

    Lin, Long-Ze; Harnly, James M

    2010-06-01

    A liquid chromatography-mass spectrometry (LC-MS) profiling method was used to characterize the phenolic components of 17 leafy vegetables from Brassica species other than Brassica oleracea. The vegetables studied were mustard green, baby mustard green, gai choy, baby gai choy, yu choy, yu choy tip, bok choy, bok choy tip, baby bok choy, bok choy sum, Taiwan bok choy, Shanghai bok choy, baby Shanghai bok choy, rapini broccoli, turnip green, napa, and baby napa. This work led to the tentative identification of 71 phenolic compounds consisting of kaempferol 3-O-diglucoside-7-O-glucoside derivatives, isorhamnetin 3-O-glucoside-7-O-glucoside hydroxycinnamoyl gentiobioses, hydroxycinnamoylmalic acids, and hydroxycinnamoylquinic acids. Ten of the compounds, 3-O-diacyltriglucoside-7-O-glucosides of kaempferol and quercetin, had not been previously reported. The phenolic component profiles of these vegetables were significantly different than those of the leafy vegetables from B. oleracea. This is the first comparative study of these leafy vegetables. Ten of the vegetables had never been previously studied by LC-MS.

  15. Phenolic Component Profiles of Mustard Greens, Yu Choy, and 15 Other Brassica Vegetables

    PubMed Central

    Lin, Long-Ze; Harnly, James M

    2013-01-01

    A liquid chromatography–mass spectrometry (LC-MS) profiling method was used to characterize the phenolic components of 17 leafy vegetables from Brassica species other than Brassica oleracea. The vegetables studied were mustard green, baby mustard green, gai choy, baby gai choy, yu choy, yu choy tip, bok choy, bok choy tip, baby bok choy, bok choy sum, Taiwan bok choy, Shanghai bok choy, baby Shanghai bok choy, rapini broccoli, turnip green, napa, and baby napa. This work led to the tentative identification of 71 phenolic compounds consisting of kaempferol 3-O-diglucoside-7-O-glucoside derivatives, isorhamnetin 3-O-glucoside-7-O-glucoside hydroxycinnamoyl gentiobioses, hydroxycinnamoylmalic acids, and hydroxycinnamoylquinic acids. Ten of the compounds, 3-O-diacyltriglucoside-7-O-glucosides of kaempferol and quercetin, had not been previously reported. The phenolic component profiles of these vegetables were significantly different than those of the leafy vegetables from B. oleracea. This is the first comparative study of these leafy vegetables. Ten of the vegetables had never been previously studied by LC-MS. PMID:20465307

  16. Phenolic component profiles of mustard greens, yu choy, and 15 other brassica vegetables.

    PubMed

    Lin, Long-Ze; Harnly, James M

    2010-06-01

    A liquid chromatography-mass spectrometry (LC-MS) profiling method was used to characterize the phenolic components of 17 leafy vegetables from Brassica species other than Brassica oleracea. The vegetables studied were mustard green, baby mustard green, gai choy, baby gai choy, yu choy, yu choy tip, bok choy, bok choy tip, baby bok choy, bok choy sum, Taiwan bok choy, Shanghai bok choy, baby Shanghai bok choy, rapini broccoli, turnip green, napa, and baby napa. This work led to the tentative identification of 71 phenolic compounds consisting of kaempferol 3-O-diglucoside-7-O-glucoside derivatives, isorhamnetin 3-O-glucoside-7-O-glucoside hydroxycinnamoyl gentiobioses, hydroxycinnamoylmalic acids, and hydroxycinnamoylquinic acids. Ten of the compounds, 3-O-diacyltriglucoside-7-O-glucosides of kaempferol and quercetin, had not been previously reported. The phenolic component profiles of these vegetables were significantly different than those of the leafy vegetables from B. oleracea. This is the first comparative study of these leafy vegetables. Ten of the vegetables had never been previously studied by LC-MS. PMID:20465307

  17. Apollo 13 prime crew portrait

    NASA Technical Reports Server (NTRS)

    1969-01-01

    Apollo 13 prime crew portrait. From left to right are Astronauts James A. Lovell, Thomas K. Mattingly, and Fred W. Haise in their space suits. On the table in front of them are (l-r) a model of a sextant, the Apollo 13 insignia, and a model of an astrolabe. The sextant and astrolabe are two ancient forms of navigation.

  18. Prime Suspect, Second Row Center

    ERIC Educational Resources Information Center

    Laird, Ellen A.

    2011-01-01

    His father had been hacked to death in his own bed with an ax the previous November. His mother was similarly brutalized and left for dead with her husband but survived. On the last Monday of that August, after several months and many investigative twists, turns, and fumbles, there sat the son--the prime suspect--in Ellen Laird's literature class,…

  19. The activation of semantic memory: effects of prime exposure, prime-target relationship, and task demands.

    PubMed

    Bueno, Steve; Frenck-Mestre, Cheryl

    2008-06-01

    Priming facilitation was examined under conditions of brief incremental prime exposures (28, 43, 71, and 199 msec) under masked conditions for two types of lexical relationships (associative-semantic pairs, such as "wolf-fox," and semantic-feature pairs, such as "whale-dolphin") and in two tasks (primed lexical decision and semantic categorization). The results of eight experiments revealed, first, that priming elicits faster response times for semantic-feature pairs. The associative-semantic pairs produced priming only at the longer prime exposures. Second, priming was observed earlier for semantic categorization than for the lexical decision task, in which priming was observed only at the longer stimulus onset asynchronies. Finally, our results allowed us to discredit the congruency hypothesis, according to which priming is due to a common categorical response for the prime and target words. The implications of these results for current theories of semantic priming are discussed.

  20. Pulsed laser annealing of Be-implanted GaN

    SciTech Connect

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2005-11-01

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

  1. Affective Priming with Associatively Acquired Valence

    ERIC Educational Resources Information Center

    Aguado, Luis; Pierna, Manuel; Saugar, Cristina

    2005-01-01

    Three experiments explored the effect of affectively congruent or incongruent primes on evaluation responses to positive or negative valenced targets (the "affective priming" effect). Experiment 1 replicated the basic affective priming effect with Spanish nouns: reaction time for evaluative responses (pleasant/unpleasant) were slower on…

  2. Affective Priming with Auditory Speech Stimuli

    ERIC Educational Resources Information Center

    Degner, Juliane

    2011-01-01

    Four experiments explored the applicability of auditory stimulus presentation in affective priming tasks. In Experiment 1, it was found that standard affective priming effects occur when prime and target words are presented simultaneously via headphones similar to a dichotic listening procedure. In Experiment 2, stimulus onset asynchrony (SOA) was…

  3. Priming Lexical Stress in Reading Italian Aloud

    ERIC Educational Resources Information Center

    Sulpizio, Simone; Job, Remo; Burani, Cristina

    2012-01-01

    Two experiments using a lexical priming paradigm investigated how stress information is processed in reading Italian words. In both experiments, prime and target words either shared the stress pattern or they had different stress patterns. We expected that lexical activation of the prime would favour the assignment of congruent stress to the…

  4. Sandwich Priming: A Method for Overcoming the Limitations of Masked Priming by Reducing Lexical Competitor Effects

    ERIC Educational Resources Information Center

    Lupker, Stephen J.; Davis, Colin J.

    2009-01-01

    An orthographically similar masked nonword prime facilitates responding in a lexical decision task (Forster & Davis, 1984). Recently, this masked priming paradigm has been used to evaluate models of orthographic coding--models that attempt to quantify prime-target similarity. One general finding is that priming effects often do not occur when…

  5. PREFACE: SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor: Devoted to the 75th anniversary of Yu M Ostanevich's birth

    NASA Astrophysics Data System (ADS)

    Gordely, Valentin; Kuklin, Alexander; Balasoiu, Maria

    2012-03-01

    The Second International Workshop 'SANS-YuMO User Meeting at the Start-up of Scientific Experiments on the IBR-2M Reactor', devoted to the 75th anniversary of the birth of Professor Yu M Ostanevich (1936-1992), an outstanding neutron physicist and the founder of small-angle neutron scattering (field, group, and instrument) at JINR FLNPh, was held on 27-30 May at the Frank Laboratory of Neutron Physics. The first Workshop was held in October 2006. Research groups from different neutron centers, universities and research institutes across Europe presented more than 35 oral and poster presentations describing scientific and methodological results. Most of them were obtained with the help of the YuMO instrument before the IBR-2 shutdown in 2006. For the last four years the IBR-2 reactor has been shut down for refurbishment. At the end of 2010 the physical launch of the IBR-2M reactor was finally realized. Nowadays the small-angle neutron scattering (SANS) technique is applied to a wide range of scientific problems in condensed matter, soft condensed matter, biology and nanotechnology, and despite the fact that there are currently over 30 SANS instruments in operation worldwide at both reactor and spallation sources, the demand for beam-time is considerably higher than the time available. It must be remembered, however, that as the first SANS machine on a steady-state reactor was constructed at the Institute Laue Langevin, Grenoble, the first SANS instrument on a 'white' neutron pulsed beam was accomplished at the Joint Institute for Nuclear Research at the IBR-30 reactor, beamline N5. During the meeting Yu M Ostanevich's determinative and crucial contribution to the construction of spectrometers at the IBR-2 high-pulsed reactor was presented, as well as his contribution to the development of the time-of-flight (TOF) small-angle scattering technique, and a selection of other scientific areas. His leadership and outstanding scientific achievements in applications of the

  6. Structural defects in bulk GaN

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

    2014-10-01

    Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

  7. High Voltage GaN Schottky Rectifiers

    SciTech Connect

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  8. Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

    NASA Astrophysics Data System (ADS)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2011-08-01

    The structural stability of carbon incorporated GaN(1101) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH2 and CH2 below ˜1660 K while the polar GaN(0001) surface with CH3 is stabilized below ˜1550 K. This difference could be one of possible explanations for p-type doping on the semipolar GaN(1101) surface.

  9. Biosensors based on GaN nanoring optical cavities

    NASA Astrophysics Data System (ADS)

    Kouno, Tetsuya; Takeshima, Hoshi; Kishino, Katsumi; Sakai, Masaru; Hara, Kazuhiko

    2016-05-01

    Biosensors based on GaN nanoring optical cavities were demonstrated using room-temperature photoluminescence measurements. The outer diameter, height, and thickness of the GaN nanorings were approximately 750-800, 900, and 130-180 nm, respectively. The nanorings functioned as whispering-gallery-mode (WGM)-type optical cavities and exhibited sharp resonant peaks like lasing actions. The evanescent component of the WGM was strongly affected by the refractive index of the ambient environment, the type of liquid, and the sucrose concentration of the analyzed solution, resulting in shifts of the resonant wavelengths. The results indicate that the GaN nanorings can potentially be used in sugar sensors of the biosensors.

  10. Curvature and bow of bulk GaN substrates

    NASA Astrophysics Data System (ADS)

    Foronda, Humberto M.; Romanov, Alexey E.; Young, Erin C.; Roberston, Christian A.; Beltz, Glenn E.; Speck, James S.

    2016-07-01

    We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.

  11. High-Sensitivity GaN Microchemical Sensors

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Yang, Baohua; Liao, Anna; Moon, Jeongsun; Prokopuk, Nicholas

    2009-01-01

    Systematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.

  12. ECR, ICP, and RIE plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Rieger, D.J.; Hafich, M.J.

    1996-06-01

    The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {mu}m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique.

  13. Desorption Induced Formation of Negative Nanowires in GaN

    SciTech Connect

    Stach, E.A.; Kim, B.-J.

    2011-06-01

    We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of the Ga droplets that catalyze their creation. These nanoscale features offer controllable templates for the creation and integration of a broad range of nanoscale materials systems, with potential applications in nanoscale fluidics.

  14. Biosensors based on GaN nanoring optical cavities

    NASA Astrophysics Data System (ADS)

    Kouno, Tetsuya; Takeshima, Hoshi; Kishino, Katsumi; Sakai, Masaru; Hara, Kazuhiko

    2016-05-01

    Biosensors based on GaN nanoring optical cavities were demonstrated using room-temperature photoluminescence measurements. The outer diameter, height, and thickness of the GaN nanorings were approximately 750–800, 900, and 130–180 nm, respectively. The nanorings functioned as whispering-gallery-mode (WGM)-type optical cavities and exhibited sharp resonant peaks like lasing actions. The evanescent component of the WGM was strongly affected by the refractive index of the ambient environment, the type of liquid, and the sucrose concentration of the analyzed solution, resulting in shifts of the resonant wavelengths. The results indicate that the GaN nanorings can potentially be used in sugar sensors of the biosensors.

  15. Strong atomic ordering in Gd-doped GaN

    SciTech Connect

    Ishimaru, Manabu; Higashi, Kotaro; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

    2012-09-03

    Gd-doped GaN (Ga{sub 1-x}Gd{sub x}N) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study: x = 0.02, 0.05, and 0.08. XRD and TEM results revealed that the low Gd concentration GaN possesses the wurtzite structure. On the other hand, it was found that an ordered phase with a quadruple-periodicity along the [001] direction in the wurtzite structure is formed throughout the film with x = 0.08. We proposed the atomistic model for the superlattice structure observed here.

  16. Surface morphology of GaN: Flat versus vicinal surfaces

    SciTech Connect

    Xie, M.H.; Seutter, S.M.; Zheng, L.X.; Cheung, S.H.; Ng, Y.F.; Wu, H.; Tong, S.Y.

    2000-07-01

    The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.

  17. [Zheng Yu-lin, a founder of the acupuncture and moxibustion cause of new China].

    PubMed

    Tian, Da-zhe; Liu, Jun-chi; Zhao, Juan; Zheng, Jun-jiang

    2007-07-01

    Mr. ZHENG Yu-lin is one of the most outstanding acupuncture scientists in the modern times in our country. He inherits the learning handed down in a family and is bold in making innovations, successfully combines the exercises to benefit the internal organs with Chinese traditional acupuncture needling methods, forming a set of unique Zheng's needling methods, which is used for treatment of severe ophthalmopathy with excellent therapeutic effects, and is famed the world over. Main achievements: took on scientific researches of acupuncture and moxibustion, teaching and clinical works in the first stage of establishment of China Academy of Traditional Chinese Medicinel trains a large number of famous specificities of acupuncture and moxibustion for new China; advocates study on channel essence; cures stubborn diseases for leaders of friend countries undertaking the great trust of the central leaders for many times, becoming an important ties of Chinese political foreign affairs. PMID:17722840

  18. Main features of the new software control system for the YuMO instrument

    NASA Astrophysics Data System (ADS)

    Kirilov, A. S.

    2012-03-01

    During the last years the new software instrumental complex Sonix+ has been developed at FLNP JINR to replace the former Sonix control system [1]. This complex has been tested at a number of IBR-2 instruments (REMUR, NERA-PR) and on instruments at other centers - KIA, Moscow (MOND), etc. We plan to install the new complex at the YuMO instrument as well. The Sonix+ is implemented on the PC/Windows XP platform, whereas the Sonix is based on the VME/Os-9 obsolete platform. The Sonix+ [1] has been designed considering the experience of long-term operation of the predecessor and recent trends. The paper is devoted to the main features of the new software and the comparison with the former one.

  19. Yu-Shiba-Rusinov states and topological superconductivity in Ising paired superconductors

    NASA Astrophysics Data System (ADS)

    Sharma, Girish; Tewari, Sumanta

    2016-09-01

    An unusual form of superconductivity, called Ising superconductivity, has recently been uncovered in mono- and few-layered transition metal dichalcogenides. This 2D superconducting state is characterized by the so-called Ising spin-orbit coupling (SOC), which produces strong oppositely oriented effective Zeeman fields perpendicular to the 2D layer in opposite momentum space valleys. We examine the Yu-Shiba-Rusinov (YSR) bound states localized at magnetic impurities in Ising superconductors and show that the unusual SOC manifests itself in unusually strong anisotropy in magnetic field response observable in STM experiments. For a chain of magnetic impurities with moments parallel to the plane of Ising superconductors we show that the low energy YSR band hosts topological superconductivity and Majorana excitations as a direct manifestation of topological effects induced by Ising spin-orbit coupling.

  20. Maglev ready for prime time.

    SciTech Connect

    Rote, D. M.; Johnson, L. R.; Energy Systems

    2003-01-01

    Putting Maglev on Track' (Issues, Spring 1990) observed that growing airline traffic and associated delays were already significant and predicted that they would worsen. The article argued that a 300-mile-per-hour (mph) magnetic levitation (maglev) system integrated into airport and airline operations could be a part of the solution. Maglev was not ready for prime time in 1990, but it is now.

  1. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    SciTech Connect

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-10-26

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  2. Conductivity based on selective etch for GaN devices and applications thereof

    DOEpatents

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  3. Temperature dependent growth of GaN nanowires using CVD technique

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Kumar, Vikram; Singh, R.

    2016-05-01

    Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.

  4. KAPAO Prime: Design and Simulation

    NASA Astrophysics Data System (ADS)

    McGonigle, Lorcan; Choi, P. I.; Severson, S. A.; Spjut, E.

    2013-01-01

    KAPAO (KAPAO A Pomona Adaptive Optics instrument) is a dual-band natural guide star adaptive optics system designed to measure and remove atmospheric aberration over UV-NIR wavelengths from Pomona College’s telescope atop Table Mountain. We present here, the final optical system, KAPAO Prime, designed in Zemax Optical Design Software that uses custom off-axis paraboloid mirrors (OAPs) to manipulate light appropriately for a Shack-Hartman wavefront sensor, deformable mirror, and science cameras. KAPAO Prime is characterized by diffraction limited imaging over the full 81” field of view of our optical camera at f/33 as well as over the smaller field of view of our NIR camera at f/50. In Zemax, tolerances of 1% on OAP focal length and off-axis distance were shown to contribute an additional 4 nm of wavefront error (98% confidence) over the field of view of our optical camera; the contribution from surface irregularity was determined analytically to be 40nm for OAPs specified to λ/10 surface irregularity (632.8nm). Modeling of the temperature deformation of the breadboard in SolidWorks revealed 70 micron contractions along the edges of the board for a decrease of 75°F when applied to OAP positions such displacements from the optimal layout are predicted to contribute an additional 20 nanometers of wavefront error. Flexure modeling of the breadboard due to gravity is on-going. We hope to begin alignment and testing of KAPAO Prime in Q1 2013.

  5. KAPAO Prime: Design and Simulation

    NASA Astrophysics Data System (ADS)

    McGonigle, Lorcan

    2012-11-01

    KAPAO (KAPAO A Pomona Adaptive Optics instrument) is a dual-band natural guide star adaptive optics system designed to measure and remove atmospheric aberration from Pomona College's telescope atop Table Mountain. We present here, the final optical system, referred to as Prime, designed in Zemax Optical Design Software. Prime is characterized by diffraction limited imaging over the full 73'' field of view of our Andor Camera at f/33 as well as for our NIR Xenics camera at f/50. In Zemax, tolerances of 1% on OAP focal length and off-axis distance were shown to contribute an additional 4 nm of wavefront error (98% confidence) over the field of view of the Andor camera; the contribution from surface irregularity was determined analytically to be 40nm for OAPs specified to l/10 surface irregularity. Modeling of the temperature deformation of the breadboard in SolidWorks revealed 70 micron contractions along the edges of the board for a decrease of 75 F; when applied to OAP positions such displacements from the optimal layout are predicted to contribute an additional 20 nanometers of wavefront error. Flexure modeling of the breadboard due to gravity is on-going. We hope to begin alignment and testing of ``Prime'' in Q1 2013.

  6. Dislocation luminescence in GaN single crystals under nanoindentation.

    PubMed

    Huang, Jun; Xu, Ke; Fan, Ying Min; Wang, Jian Feng; Zhang, Ji Cai; Ren, Guo Qiang

    2014-01-01

    This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.

  7. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  8. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup −8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  9. First-principles study of d0 ferromagnetism in alkali-metal doped GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Yong

    2016-08-01

    The d0 ferromagnetism in GaN has been studied based on density functional theory. Our results show that GaN with sufficient hole become spin-polarized. Alkali-metal doping can introduce holes in GaN. Among them, both of Li- and Na-doping induce ferromagnetism in GaN and Na-doped GaN behaves as half-metallic ferromagnet. Moreover, at a growth temperature of 2000 K under N-rich condition, both concentrations can exceed 18%, which is sufficient to produce detectable macroscopic magnetism in GaN. The Curie temperature of Li- and Na-doped GaN is estimated to be 304 and 740 K, respectively, which are well above room temperature.

  10. GaN nanowire arrays by a patterned metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Wang, K. C.; Yuan, G. D.; Wu, R. W.; Lu, H. X.; Liu, Z. Q.; Wei, T. B.; Wang, J. X.; Li, J. M.; Zhang, W. J.

    2016-04-01

    We developed an one-step and two-step metal-assisted chemical etching method to produce self-organized GaN nanowire arrays. In one-step approach, GaN nanowire arrays are synthesized uniformly on GaN thin film surface. However, in a two-step etching processes, GaN nanowires are formed only in metal uncovered regions, and GaN regions with metal-covering show nano-porous sidewalls. We propose that nanowires and porous nanostructures are tuned by sufficient and limited etch rate, respectively. PL spectra shows a red-shift of band edge emission in GaN nanostructures. The formation mechanism of nanowires was illustrated by two separated electrochemical reactions occur simultaneously. The function of metals and UV light was illustrated by the scheme of potential relationship between energy bands in Si, GaN and standard hydrogen electrode potential of solution and metals.

  11. Synthesis of p-type GaN nanowires

    NASA Astrophysics Data System (ADS)

    Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2013-08-01

    GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo

  12. Wrath of God: religious primes and punishment.

    PubMed

    McKay, Ryan; Efferson, Charles; Whitehouse, Harvey; Fehr, Ernst

    2011-06-22

    Recent evidence indicates that priming participants with religious concepts promotes prosocial sharing behaviour. In the present study, we investigated whether religious priming also promotes the costly punishment of unfair behaviour. A total of 304 participants played a punishment game. Before the punishment stage began, participants were subliminally primed with religion primes, secular punishment primes or control primes. We found that religious primes strongly increased the costly punishment of unfair behaviours for a subset of our participants--those who had previously donated to a religious organization. We discuss two proximate mechanisms potentially underpinning this effect. The first is a 'supernatural watcher' mechanism, whereby religious participants punish unfair behaviours when primed because they sense that not doing so will enrage or disappoint an observing supernatural agent. The second is a 'behavioural priming' mechanism, whereby religious primes activate cultural norms pertaining to fairness and its enforcement and occasion behaviour consistent with those norms. We conclude that our results are consistent with dual inheritance proposals about religion and cooperation, whereby religions harness the byproducts of genetically inherited cognitive mechanisms in ways that enhance the survival prospects of their adherents.

  13. Refractive index of erbium doped GaN thin films

    SciTech Connect

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  14. Plasma chemistry dependent ECR etching of GaN

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Rieger, D.J.

    1995-12-31

    Electron cyclotron resonance (ECR) etching of GaN in Cl{sub 2}/H{sub 2}/Ar, C1{sub 2}/SF{sub 6}/Ar, BCl{sub 3}/H{sub 2}/Ar and BCl{sub 3}/SF{sub 6}/Ar plasmas is reported as a function of percent H{sub 2} and SF{sub 6}. GaN etch rates were found to be 2 to 3 times greater in Cl{sub 2}/H{sub 2}/Ar discharges than in BCl{sub 3}/H{sub 2}/Ar discharges independent of the H{sub 2} concentration. In both discharges, the etch rates decreased as the H{sub 2} concentration increased above 10%. When SF{sub 6} was substituted for H{sub 2}, the GaN etch rates in BCl{sub 3}-based plasmas were greater than those for the Cl{sub 2}-based discharges as the SF{sub 6} concentration increased. GaN etch rates were greater in Cl{sub 2}/H{sub 2}/Ar discharges as compared to Cl{sub 2}SF{sub 6}/Ar discharges whereas the opposite trend was observed for BCl{sub 3}-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively.

  15. Photoluminescence of Zn-implanted GaN

    NASA Technical Reports Server (NTRS)

    Pankove, J. I.; Hutchby, J. A.

    1974-01-01

    The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

  16. Properties of H, O and C in GaN

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  17. Priming of antiherbivore defensive responses in plants.

    PubMed

    Kim, Jinwon; Felton, Gary W

    2013-06-01

    Defense priming is defined as increased readiness of defense induction. A growing body of literature indicates that plants (or intact parts of a plant) are primed in anticipation of impending environmental stresses, both biotic and abiotic, and upon the following stimulus, induce defenses more quickly and strongly. For instance, some plants previously exposed to herbivore-inducible plant volatiles (HIPVs) from neighboring plants under herbivore attack show faster or stronger defense activation and enhanced insect resistance when challenged with secondary insect feeding. Research on priming of antiherbivore defense has been limited to the HIPV-mediated mechanism until recently, but significant advances were made in the past three years, including non-HIPV-mediated defense priming, epigenetic modifications as the molecular mechanism of priming, and others. It is timely to consider the advances in research on defense priming in the plant-insect interactions.

  18. GaN as a radiation hard particle detector

    NASA Astrophysics Data System (ADS)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O'Shea, V.

    2007-06-01

    Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 μm and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage ( I- V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 μm epitaxial GaN irradiated to fluences of 1016 protons cm-2 and 1016 neutrons cm-2 show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device.

  19. Substitutional and interstitial carbon in wurtzite GaN

    NASA Astrophysics Data System (ADS)

    Wright, A. F.

    2002-09-01

    First-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon (CI) is found to assume different configurations depending on the Fermi level: A site at the center of the c-axis channel is favored when the Fermi level is below 0.9 eV (relative to the valence band maximum) and a split-interstitial configuration is favored otherwise. Both configurations produce partly filled energy levels near the middle of the gap, and CI should therefore exhibit deep donor behavior in p-type GaN and deep acceptor behavior in n-type GaN. Formation energies for CN, CGa, and CI are similar, making it likely that CN acceptors will be compensated by other carbon species. CGa is predicted to be the primary compensating species when growth occurs under N-rich conditions while channel CI is predicted to be the primary compensating species under Ga-rich growth conditions. Self-compensation is predicted to be more significant under Ga-rich growth conditions than under N-rich conditions. Experimental evidence for self-compensation is discussed. Four carbon complexes are discussed. CN-VGa is found to be unstable when the Fermi level is above the middle of the gap due to the high stability of gallium vacancies (VGa). The CN-VGa complex was previously suggested as a source of the broad 2.2 eV luminescence peak often observed in n-type GaN. The present results indicate that this is unlikely. The CI-CN complex is capable of forming in carbon doped GaN grown under Ga-rich conditions if the mobility of the constituents is high enough. Experimental evidence for its existence is discussed.

  20. Can Faces Prime a Language?

    PubMed

    Woumans, Evy; Martin, Clara D; Vanden Bulcke, Charlotte; Van Assche, Eva; Costa, Albert; Hartsuiker, Robert J; Duyck, Wouter

    2015-09-01

    Bilinguals have two languages that are activated in parallel. During speech production, one of these languages must be selected on the basis of some cue. The present study investigated whether the face of an interlocutor can serve as such a cue. Spanish-Catalan and Dutch-French bilinguals were first familiarized with certain faces, each of which was associated with only one language, during simulated Skype conversations. Afterward, these participants performed a language production task in which they generated words associated with the words produced by familiar and unfamiliar faces displayed on-screen. When responding to familiar faces, participants produced words faster if the faces were speaking the same language as in the previous Skype simulation than if the same faces were speaking a different language. Furthermore, this language priming effect disappeared when it became clear that the interlocutors were actually bilingual. These findings suggest that faces can prime a language, but their cuing effect disappears when it turns out that they are unreliable as language cues. PMID:26209531

  1. Degradation of 4,4{prime}-Dichlorobiphenyl, 3,3{prime}, 4,4{prime}-Tetrachlorobiphenyl, and 2,2{prime},4,4{prime},5,5{prime}-Hexachlorobiphenyl by the white rot fungus Phanerochaete chrysosporium

    SciTech Connect

    Dietrich, D.; Lamar, R.; Hickey, W.J.

    1995-11-01

    The white rot fungus Phanerochaete chrysosporium has demonstrated abilities to degrade many xenobiotic chemicals. In this study, the degradation of three model polychlorinated biphenyl (PCB) congeners (4,4{prime}- dichlorobiphenyl [DCB], 3,3{prime},4,4{prime}-tetrachlorobiphenyl, and 2,2{prime},4,4{prime},5,5{prime}-hexachlorobiphenyl) by P. chrysosporium in liquid culture was examined. After 28 days of incubation, {sup 14}C partitioning analysis indicated extensive degradation of DCB, including 11% mineralization. In contrast, there was negligible mineralization of the tetrachloro- or hexachlorobiphenyl and little evidence for any significant metabolism. With all of the model PCBs, a large fraction of the {sup 14}C was determined to be biomass bound. Results from a time course study done with 4,4{prime}-[{sup 14}C]DCB to examine {sup 14}C partitioning dynamics indicated that the biomass-bound {sup 14}C was likely attributable to nonspecific adsorption of the PCBs to the fungal hyphae. In a subsequent isotope trapping experiment, 4-chlorobenzoic acid and 4-chlorobenzyl alcohol were identified as metabolites produced from 4,4{prime}-[{sup 14}C]DCB. To the best of our knowledge, this the first report describing intermediates formed by P. chrysosporium during PCB degradation. Results from these experiments suggested similarities between P. chrysosporium and bacterial systems in terms of effects of congener chlorination degree and pattern on PCB metabolism and intermediates characteristic of the PCB degradation process. 23 refs., 4 figs., 2 tabs.

  2. Complex architecture of primes and natural numbers.

    PubMed

    García-Pérez, Guillermo; Serrano, M Ángeles; Boguñá, Marián

    2014-08-01

    Natural numbers can be divided in two nonoverlapping infinite sets, primes and composites, with composites factorizing into primes. Despite their apparent simplicity, the elucidation of the architecture of natural numbers with primes as building blocks remains elusive. Here, we propose a new approach to decoding the architecture of natural numbers based on complex networks and stochastic processes theory. We introduce a parameter-free non-Markovian dynamical model that naturally generates random primes and their relation with composite numbers with remarkable accuracy. Our model satisfies the prime number theorem as an emerging property and a refined version of Cramér's conjecture about the statistics of gaps between consecutive primes that seems closer to reality than the original Cramér's version. Regarding composites, the model helps us to derive the prime factors counting function, giving the probability of distinct prime factors for any integer. Probabilistic models like ours can help to get deeper insights about primes and the complex architecture of natural numbers.

  3. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

    NASA Astrophysics Data System (ADS)

    Rajan, Akhil; Rogers, David J.; Ton-That, Cuong; Zhu, Liangchen; Phillips, Matthew R.; Sundaram, Suresh; Gautier, Simon; Moudakir, Tarik; El-Gmili, Youssef; Ougazzaden, Abdallah; Sandana, Vinod E.; Teherani, Ferechteh H.; Bove, Philippe; Prior, Kevin A.; Djebbour, Zakaria; McClintock, Ryan; Razeghi, Manijeh

    2016-08-01

    Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.

  4. Yu-Shiba-Rusinov states in phase-biased superconductor-quantum dot-superconductor junctions

    NASA Astrophysics Data System (ADS)

    Kiršanskas, Gediminas; Goldstein, Moshe; Flensberg, Karsten; Glazman, Leonid I.; Paaske, Jens

    2015-12-01

    We study the effects of a phase difference on Yu-Shiba-Rusinov (YSR) states in a spinful Coulomb-blockaded quantum dot contacted by a superconducting loop. In the limit where charging energy is larger than the superconducting gap, we determine the subgap excitation spectrum, the corresponding supercurrent, and the differential conductance as measured by a normal-metal tunnel probe. In absence of a phase difference only one linear combination of the superconductor lead electrons couples to the spin, which gives a single YSR state. With finite phase difference, however, it is effectively a two-channel scattering problem and therefore an additional state emerges from the gap edge. The energy of the phase-dependent YSR states depend on the gate voltage and one state can cross zero energy twice inside the valley with odd occupancy. These crossings are shifted by the phase difference towards the charge degeneracy points, corresponding to larger exchange couplings. Moreover, the zero-energy crossings give rise to resonant peaks in the differential conductance with magnitude 4 e2/h . Finally, we demonstrate that the quantum fluctuations of the dot spin do not alter qualitatively any of the results.

  5. PCBs, PCQs and PCDFs in tissues of Yusho and Yu-Cheng patients

    SciTech Connect

    Miyata, H.; Fukushima, S.; Kashimoto, T.; Kunita, N.

    1985-02-01

    All five samples of oil involved in the recent Yu-Cheng outbreak were heavily contaminated with PCBs, PCQs and PCDFs at levels, on the average, of 62, 20 and 0.14 ppm, respectively. The samples not only had roughly one-tenth of the contamination by PCBs, PCQs and PCDFs but also three to four times lower ratios of PCQs and PCDFs to PCBs than samples of oil involved in Yusho in Japan. PCBs, PCQs and PCDFs present were all composed of similar congeners to the ones found in the Yusho specimens, though some variation of the component ratios of PCBs and PCDFs were observed. On the other hand, five patients with Yusho who died 1 to 10 years following poisoning had markedly higher tissue levels of PCDFs and PCQs than did a worker occupationally exposed to PCBs. Taking great differences in the process of the healing and the tissue levels of PCBs, PCQs and PCDFs between the two poisoning cases into consideration, PCDFs and PCQs - especially the former - and not PCBs are deduced to be strongly associated with the development of Yusho.

  6. Comparative Transcriptional Profiling of Primed and Non-primed Rice Seedlings under Submergence Stress

    PubMed Central

    Hussain, Saddam; Yin, Hanqi; Peng, Shaobing; Khan, Faheem A.; Khan, Fahad; Sameeullah, Muhammad; Hussain, Hafiz A.; Huang, Jianliang; Cui, Kehui; Nie, Lixiao

    2016-01-01

    Submergence stress is a limiting factor for direct-seeded rice systems in rainfed lowlands and flood-prone areas of South and Southeast Asia. The present study demonstrated that submergence stress severely hampered the germination and seedling growth of rice, however, seed priming alleviated the detrimental effects of submergence stress. To elucidate the molecular basis of seed priming-induced submergence tolerance, transcriptome analyses were performed using 4-day-old primed (selenium-Se and salicylic acid-SA priming) and non-primed rice seedlings under submergence stress. Genomewide transcriptomic profiling identified 2371 and 2405 transcripts with Se- and SA-priming, respectively, that were differentially expressed in rice compared with non-priming treatment under submergence. Pathway and gene ontology term enrichment analyses revealed that genes involved in regulation of secondary metabolism, development, cell, transport, protein, and metal handling were over-represented after Se- or SA-priming. These coordinated factors might have enhanced the submergence tolerance and maintained the better germination and vigorous seedling growth of primed rice seedlings. It was also found that many genes involved in cellular and metabolic processes such as carbohydrate metabolism, cellular, and metabolic biosynthesis, nitrogen compound metabolic process, transcription, and response to oxidative stress were induced and overlapped in seed priming treatments, a finding which reveals the common mechanism of seed priming-induced submergence tolerance. Taken together, these results may provide new avenues for understanding and advancing priming-induced responses to submergence tolerance in crop plants. PMID:27516766

  7. Comparative Transcriptional Profiling of Primed and Non-primed Rice Seedlings under Submergence Stress.

    PubMed

    Hussain, Saddam; Yin, Hanqi; Peng, Shaobing; Khan, Faheem A; Khan, Fahad; Sameeullah, Muhammad; Hussain, Hafiz A; Huang, Jianliang; Cui, Kehui; Nie, Lixiao

    2016-01-01

    Submergence stress is a limiting factor for direct-seeded rice systems in rainfed lowlands and flood-prone areas of South and Southeast Asia. The present study demonstrated that submergence stress severely hampered the germination and seedling growth of rice, however, seed priming alleviated the detrimental effects of submergence stress. To elucidate the molecular basis of seed priming-induced submergence tolerance, transcriptome analyses were performed using 4-day-old primed (selenium-Se and salicylic acid-SA priming) and non-primed rice seedlings under submergence stress. Genomewide transcriptomic profiling identified 2371 and 2405 transcripts with Se- and SA-priming, respectively, that were differentially expressed in rice compared with non-priming treatment under submergence. Pathway and gene ontology term enrichment analyses revealed that genes involved in regulation of secondary metabolism, development, cell, transport, protein, and metal handling were over-represented after Se- or SA-priming. These coordinated factors might have enhanced the submergence tolerance and maintained the better germination and vigorous seedling growth of primed rice seedlings. It was also found that many genes involved in cellular and metabolic processes such as carbohydrate metabolism, cellular, and metabolic biosynthesis, nitrogen compound metabolic process, transcription, and response to oxidative stress were induced and overlapped in seed priming treatments, a finding which reveals the common mechanism of seed priming-induced submergence tolerance. Taken together, these results may provide new avenues for understanding and advancing priming-induced responses to submergence tolerance in crop plants.

  8. Unconscious Congruency Priming from Unpracticed Words Is Modulated by Prime-Target Semantic Relatedness

    ERIC Educational Resources Information Center

    Ortells, Juan J.; Mari-Beffa, Paloma; Plaza-Ayllon, Vanesa

    2013-01-01

    Participants performed a 2-choice categorization task on visible word targets that were preceded by novel (unpracticed) prime words. The prime words were presented for 33 ms and followed either immediately (Experiments 1-3) or after a variable delay (Experiments 1 and 4) by a pattern mask. Both subjective and objective measures of prime visibility…

  9. Comparative Transcriptional Profiling of Primed and Non-primed Rice Seedlings under Submergence Stress.

    PubMed

    Hussain, Saddam; Yin, Hanqi; Peng, Shaobing; Khan, Faheem A; Khan, Fahad; Sameeullah, Muhammad; Hussain, Hafiz A; Huang, Jianliang; Cui, Kehui; Nie, Lixiao

    2016-01-01

    Submergence stress is a limiting factor for direct-seeded rice systems in rainfed lowlands and flood-prone areas of South and Southeast Asia. The present study demonstrated that submergence stress severely hampered the germination and seedling growth of rice, however, seed priming alleviated the detrimental effects of submergence stress. To elucidate the molecular basis of seed priming-induced submergence tolerance, transcriptome analyses were performed using 4-day-old primed (selenium-Se and salicylic acid-SA priming) and non-primed rice seedlings under submergence stress. Genomewide transcriptomic profiling identified 2371 and 2405 transcripts with Se- and SA-priming, respectively, that were differentially expressed in rice compared with non-priming treatment under submergence. Pathway and gene ontology term enrichment analyses revealed that genes involved in regulation of secondary metabolism, development, cell, transport, protein, and metal handling were over-represented after Se- or SA-priming. These coordinated factors might have enhanced the submergence tolerance and maintained the better germination and vigorous seedling growth of primed rice seedlings. It was also found that many genes involved in cellular and metabolic processes such as carbohydrate metabolism, cellular, and metabolic biosynthesis, nitrogen compound metabolic process, transcription, and response to oxidative stress were induced and overlapped in seed priming treatments, a finding which reveals the common mechanism of seed priming-induced submergence tolerance. Taken together, these results may provide new avenues for understanding and advancing priming-induced responses to submergence tolerance in crop plants. PMID:27516766

  10. The Effect of Prime Duration in Masked Orthographic Priming Depends on Neighborhood Distribution

    ERIC Educational Resources Information Center

    Robert, Christelle; Mathey, Stephanie

    2012-01-01

    A lexical decision task was used with a masked priming procedure to investigate whether and to what extent neighborhood distribution influences the effect of prime duration in masked orthographic priming. French word targets had two higher frequency neighbors that were either distributed over two letter positions (e.g., "LOBE/robe-loge") or…

  11. Surface-normal emission from subwavelength GaN membrane grating.

    PubMed

    Wang, Yongjin; Shi, Zheng; Li, Xin; He, Shumin; Zhang, Miao; Zhu, Hongbo

    2014-01-13

    We present here the fabrication of subwavelength GaN membrane grating with a double-side process. Controllable GaN membrane thickness is achieved by backside thinning technique, which is essential to realize guided-mode resonant GaN grating in the visible range. Subwavelength GaN grating can serve as an optical resonator and accommodate surface-normal emission coupling. The measured photoluminescence (PL) spectra are sensitive to the parameters and shapes of GaN gratings. Both numerical simulation and reflectivity measurement are in consistent with the PL experimental results. This work opens a promising way to embed GaN-based photon emitter inside subwavelength grating to further produce a surface emitting device with a single layer GaN grating.

  12. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry–Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry–Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm‑2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  13. Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.

    PubMed

    Lin, T N; Inciong, M R; Santiago, S R M S; Yeh, T W; Yang, W Y; Yuan, C T; Shen, J L; Kuo, H C; Chiu, C H

    2016-03-18

    We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photo-induced doping are promising for applications in GaN-based optoelectronic devices.

  14. Enhancing the field emission properties of Se-doped GaN nanowires.

    PubMed

    Li, Enling; Wu, Guishuang; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin

    2016-07-01

    Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20-120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μm(-1)) compared with the pure GaN NWs (7.0 V μm(-1)). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.

  15. Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

    PubMed

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  16. Computational synthesis of single-layer GaN on refractory materials

    SciTech Connect

    Singh, Arunima K.; Hennig, Richard G.

    2014-08-04

    The synthesis of single-layer materials relies on suitable substrates. In this paper, we identify suitable substrates for the stabilization and growth of single-layer GaN and characterize the effect of the substrate on the electronic structure of single-layer GaN. We identify two classes of epitaxial substrates, refractory metal diborides and transition-metal dichalcogenides. We find that the refractory diborides provide epitaxial stabilization for the growth and functionalization of single layer GaN. We show that chemical interactions of single layer GaN with the diboride substrates result in n-type doping of the single-layer GaN. Transition-metal dichalcogenides, on the other hand, although epitaxially matched, cannot provide sufficient thermodynamic stabilization for the growth of single layer GaN. Nonetheless, energy band alignments of GaN/metal chalcogenides show that they make good candidates for heterostructures.

  17. Fabrication and characterization of GaN nanowire doubly clamped resonators

    SciTech Connect

    Maliakkal, Carina B. Mathew, John P.; Hatui, Nirupam; Rahman, A. Azizur; Deshmukh, Mandar M.; Bhattacharya, Arnab

    2015-09-21

    Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

  18. Enhancing the field emission properties of Se-doped GaN nanowires

    NASA Astrophysics Data System (ADS)

    Li, Enling; Wu, Guishuang; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin

    2016-07-01

    Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20–120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μm‑1) compared with the pure GaN NWs (7.0 V μm‑1). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.

  19. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ˜1 μm and a length of ˜15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm-2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  20. Fabrication and characterization of GaN nanowire doubly clamped resonators

    NASA Astrophysics Data System (ADS)

    Maliakkal, Carina B.; Mathew, John P.; Hatui, Nirupam; Rahman, A. Azizur; Deshmukh, Mandar M.; Bhattacharya, Arnab

    2015-09-01

    Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ˜90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

  1. Study of radiation detection properties of GaN pn diode

    NASA Astrophysics Data System (ADS)

    Sugiura, Mutsuhito; Kushimoto, Maki; Mitsunari, Tadashi; Yamashita, Kohei; Honda, Yoshio; Amano, Hiroshi; Inoue, Yoku; Mimura, Hidenori; Aoki, Toru; Nakano, Takayuki

    2016-05-01

    Recently, GaN, which has remarkable properties as a material for optical devices and high-power electron devices, has also attracted attention as a material for radiation detectors. We previously suggested the use of BGaN as a neutron detector material. However, the radiation detection characteristics of GaN itself are not yet adequately understood. For realizing a BGaN neutron detector, the understanding of the radiation detection characteristics of GaN, which is a base material of the neutron detector, is important. In this study, we evaluated the radiation detection characteristics of GaN. We performed I-V and energy spectrum measurements under alpha ray, gamma ray, and thermal neutron irradiations to characterize the radiation detection characteristics of a GaN diode. The obtained results indicate that GaN is an effective material for our proposed new BGaN-based neutron detector.

  2. Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

    PubMed Central

    Lin, T. N.; Inciong, M. R.; Santiago, S. R. M. S.; Yeh, T. W.; Yang, W. Y.; Yuan, C. T.; Shen, J. L.; Kuo, H. C.; Chiu, C. H.

    2016-01-01

    We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photo-induced doping are promising for applications in GaN-based optoelectronic devices. PMID:26987403

  3. The Apollo 11 Prime Crew

    NASA Technical Reports Server (NTRS)

    1969-01-01

    Portrait of the prime crew of the Apollo 11 lunar landing mission. From left to right they are: Commander, Neil A. Armstrong, Command Module Pilot, Michael Collins, and Lunar Module Pilot, Edwin E. Aldrin Jr. On July 20th 1969 at 4:18 PM, EDT the Lunar Module 'Eagle' landed in a region of the Moon called the Mare Tranquillitatis, also known as the Sea of Tranquillity. After securing his spacecraft, Armstrong radioed back to earth: 'Houston, Tranquility Base here, the Eagle has landed'. At 10:56 p.m. that same evening and witnessed by a worldwide television audience, Neil Armstrong stepped off the 'Eagle's landing pad onto the lunar surface and said: 'That's one small step for a man, one giant leap for mankind.' He became the first human to set foot upon the Moon.

  4. Pure Mediated Priming: A Retrospective Semantic Matching Model

    ERIC Educational Resources Information Center

    Jones, Lara L.

    2010-01-01

    Mediated priming refers to the activation of a target (e.g., "stripes") by a prime (e.g., "lion") that is related indirectly via a connecting mediator (e.g., tiger). In previous mediated priming studies (e.g., McNamara & Altarriba, 1988), the mediator was associatively related to the prime. In contrast, pure mediated priming (e.g., "spoon" [right…

  5. Amount of Priming in the Difference of Mental Transformation

    ERIC Educational Resources Information Center

    Kanamori, Nobuhiro; Yagi, Akihiro

    2005-01-01

    We examined in detail effects of priming in 2 mental rotation strategies: spinning (rotating in a picture plane) and flipping (rotating in depth around a horizontal axis) by using a priming paradigm of Kanamori and Yagi (2002). The priming paradigm included prime and probe tasks within 1 trial. In the prime task, 16 participants were asked to…

  6. Does Verb Bias Modulate Syntactic Priming?

    ERIC Educational Resources Information Center

    Bernolet, Sarah; Hartsuiker, Robert J.

    2010-01-01

    In a corpus analysis of spontaneous speech Jaeger and Snider (2007) found that the strength of structural priming is correlated with verb alternation bias. This finding is consistent with an implicit learning account of syntactic priming: because the implicit learning model implemented by Chang (2002), Chang, Dell, and Bock (2006), and Chang,…

  7. Phonological Priming in Children's Picture Naming.

    ERIC Educational Resources Information Center

    Brooks, Patricia J.; MacWhinney, Brian

    2000-01-01

    Two experiments examined phonological priming in children and adults using a cross-modal picture-word interference task. Pictures of familiar objects were presented on a computer screen, while interfering words were presented over headphones. Results indicate that priming effects reach a peak during a time when articulatory information is being…

  8. 7 CFR 29.2290 - Premature primings.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Premature primings. 29.2290 Section 29.2290 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards... 21) § 29.2290 Premature primings. Ground leaves harvested before reaching complete growth...

  9. Phasic Affective Modulation of Semantic Priming

    ERIC Educational Resources Information Center

    Topolinski, Sascha; Deutsch, Roland

    2013-01-01

    The present research demonstrates that very brief variations in affect, being around 1 s in length and changing from trial to trial independently from semantic relatedness of primes and targets, modulate the amount of semantic priming. Implementing consonant and dissonant chords (Experiments 1 and 5), naturalistic sounds (Experiment 2), and visual…

  10. Can False Memories Prime Problem Solutions?

    ERIC Educational Resources Information Center

    Howe, Mark L.; Garner, Sarah R.; Dewhurst, Stephen A.; Ball, Linden J.

    2010-01-01

    Previous research has suggested that false memories can prime performance on related implicit and explicit memory tasks. The present research examined whether false memories can also be used to prime higher order cognitive processes, namely, insight-based problem solving. Participants were asked to solve a number of compound remote associate task…

  11. Negative Priming in Free Recall Reconsidered

    ERIC Educational Resources Information Center

    Hanczakowski, Maciej; Beaman, C. Philip; Jones, Dylan M.

    2016-01-01

    Negative priming in free recall is the finding of impaired memory performance when previously ignored auditory distracters become targets of encoding and retrieval. This negative priming has been attributed to an aftereffect of deploying inhibitory mechanisms that serve to suppress auditory distraction and minimize interference with learning and…

  12. Morphological Priming Survives a Language Switch

    ERIC Educational Resources Information Center

    Verdonschot, Rinus G.; Middelburg, Renee; Lensink, Saskia E.; Schiller, Niels O.

    2012-01-01

    In a long-lag morphological priming experiment, Dutch (L1)-English (L2) bilinguals were asked to name pictures and read aloud words. A design using non-switch blocks, consisting solely of Dutch stimuli, and switch-blocks, consisting of Dutch primes and targets with intervening English trials, was administered. Target picture naming was facilitated…

  13. Syntactic Priming in American Sign Language

    PubMed Central

    Hall, Matthew L.; Ferreira, Victor S.; Mayberry, Rachel I.

    2015-01-01

    Psycholinguistic studies of sign language processing provide valuable opportunities to assess whether language phenomena, which are primarily studied in spoken language, are fundamentally shaped by peripheral biology. For example, we know that when given a choice between two syntactically permissible ways to express the same proposition, speakers tend to choose structures that were recently used, a phenomenon known as syntactic priming. Here, we report two experiments testing syntactic priming of a noun phrase construction in American Sign Language (ASL). Experiment 1 shows that second language (L2) signers with normal hearing exhibit syntactic priming in ASL and that priming is stronger when the head noun is repeated between prime and target (the lexical boost effect). Experiment 2 shows that syntactic priming is equally strong among deaf native L1 signers, deaf late L1 learners, and hearing L2 signers. Experiment 2 also tested for, but did not find evidence of, phonological or semantic boosts to syntactic priming in ASL. These results show that despite the profound differences between spoken and signed languages in terms of how they are produced and perceived, the psychological representation of sentence structure (as assessed by syntactic priming) operates similarly in sign and speech. PMID:25786230

  14. Priming Addition Facts with Semantic Relations

    ERIC Educational Resources Information Center

    Bassok, Miriam; Pedigo, Samuel F.; Oskarsson, An T.

    2008-01-01

    Results from 2 relational-priming experiments suggest the existence of an automatic analogical coordination between semantic and arithmetic relations. Word pairs denoting object sets served as primes in a task that elicits "obligatory" activation of addition facts (5 + 3 activates 8; J. LeFevre, J. Bisanz, & L. Mrkonjic, 1988). Semantic relations…

  15. Visual Priming of Inverted and Rotated Objects

    ERIC Educational Resources Information Center

    Knowlton, Barbara J.; McAuliffe, Sean P.; Coelho, Chase J.; Hummel, John E.

    2009-01-01

    Object images are identified more efficiently after prior exposure. Here, the authors investigated shape representations supporting object priming. The dependent measure in all experiments was the minimum exposure duration required to correctly identify an object image in a rapid serial visual presentation stream. Priming was defined as the change…

  16. Direct growth of freestanding GaN on C-face SiC by HVPE

    PubMed Central

    Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

    2015-01-01

    In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra. PMID:26034939

  17. Si in GaN -- On the nature of the background donor

    SciTech Connect

    Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W.

    1996-08-01

    A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

  18. Direct growth of freestanding GaN on C-face SiC by HVPE.

    PubMed

    Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

    2015-06-02

    In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

  19. Optical and field emission properties of layer-structure GaN nanowires

    SciTech Connect

    Cui, Zhen; Li, Enling; Shi, Wei; Ma, Deming

    2014-08-15

    Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

  20. Dislocation-induced nanoparticle decoration on a GaN nanowire.

    PubMed

    Yang, Bing; Yuan, Fang; Liu, Qingyun; Huang, Nan; Qiu, Jianhang; Staedler, Thorsten; Liu, Baodan; Jiang, Xin

    2015-02-01

    GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vapor-liquid-solid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [1̅21̅0]np//[1̅21̅0]nw, (0001)np//(0001)nw; (II) [1̅21̅3]np//[12̅10]nw, (101̅0)np//(101̅0)nw. An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles.

  1. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  2. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

    PubMed

    Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias; Calarco, Raffaella; Geelhaar, Lutz; Trampert, Achim; Brandt, Oliver

    2012-12-12

    We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(0001̅) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.

  3. Self-induced GaN nanowire growth: surface density determination

    NASA Astrophysics Data System (ADS)

    Koryakin, A. A.; Repetun, L.; Sibirev, N. V.; Dubrovskii, V. G.

    2016-08-01

    A new numerical approach for the determination of the GaN nanowire surface density on an AlN/Si substrate as a function of the growth time and gallium flux is presented. Within this approach, the GaN island solid-like coalescence and island-nanowire transition are modeled by the Monte-Carlo method. We show the importance of taking into consideration the island coalescence for explaining that the maximum of GaN island surface density is several times larger than the maximum of GaN nanowire surface density. Also, we find that the nanowire surface density decreases with an increase of the gallium flux.

  4. Priming intelligent behavior: an elusive phenomenon.

    PubMed

    Shanks, David R; Newell, Ben R; Lee, Eun Hee; Balakrishnan, Divya; Ekelund, Lisa; Cenac, Zarus; Kavvadia, Fragkiski; Moore, Christopher

    2013-01-01

    Can behavior be unconsciously primed via the activation of attitudes, stereotypes, or other concepts? A number of studies have suggested that such priming effects can occur, and a prominent illustration is the claim that individuals' accuracy in answering general knowledge questions can be influenced by activating intelligence-related concepts such as professor or soccer hooligan. In 9 experiments with 475 participants we employed the procedures used in these studies, as well as a number of variants of those procedures, in an attempt to obtain this intelligence priming effect. None of the experiments obtained the effect, although financial incentives did boost performance. A Bayesian analysis reveals considerable evidential support for the null hypothesis. The results conform to the pattern typically obtained in word priming experiments in which priming is very narrow in its generalization and unconscious (subliminal) influences, if they occur at all, are extremely short-lived. We encourage others to explore the circumstances in which this phenomenon might be obtained.

  5. Individual Differences in Working Memory Capacity Modulates Semantic Negative Priming from Single Prime Words

    PubMed Central

    Ortells, Juan J.; Noguera, Carmen; Álvarez, Dolores; Carmona, Encarna; Houghton, George

    2016-01-01

    The present study investigated whether semantic negative priming from single prime words depends on the availability of cognitive control resources. Participants with high vs. low working memory capacity (as assessed by their performance in complex span and attentional control tasks) were instructed to either attend to or ignore a briefly presented single prime word that was followed by either a semantically related or unrelated target word on which participants made a lexical decision. Individual differences in working memory capacity (WMC) mainly affected the processing of the ignored primes, but not the processing of the attended primes: While the latter produced reliable positive semantic priming for both high- and low-WMC participants, the former gave rise to reliable semantic negative priming only for high WMC participants, with low WMC participants showing the opposite positive priming effect. The present results extend previous findings in demonstrating that (a) single negative priming can reliably generalize to semantic associates of the prime words, and (b) a differential availability of cognitive control resources can reliably modulate the negative priming effect at a semantic level of representation.

  6. Individual Differences in Working Memory Capacity Modulates Semantic Negative Priming from Single Prime Words

    PubMed Central

    Ortells, Juan J.; Noguera, Carmen; Álvarez, Dolores; Carmona, Encarna; Houghton, George

    2016-01-01

    The present study investigated whether semantic negative priming from single prime words depends on the availability of cognitive control resources. Participants with high vs. low working memory capacity (as assessed by their performance in complex span and attentional control tasks) were instructed to either attend to or ignore a briefly presented single prime word that was followed by either a semantically related or unrelated target word on which participants made a lexical decision. Individual differences in working memory capacity (WMC) mainly affected the processing of the ignored primes, but not the processing of the attended primes: While the latter produced reliable positive semantic priming for both high- and low-WMC participants, the former gave rise to reliable semantic negative priming only for high WMC participants, with low WMC participants showing the opposite positive priming effect. The present results extend previous findings in demonstrating that (a) single negative priming can reliably generalize to semantic associates of the prime words, and (b) a differential availability of cognitive control resources can reliably modulate the negative priming effect at a semantic level of representation. PMID:27621716

  7. Individual Differences in Working Memory Capacity Modulates Semantic Negative Priming from Single Prime Words.

    PubMed

    Ortells, Juan J; Noguera, Carmen; Álvarez, Dolores; Carmona, Encarna; Houghton, George

    2016-01-01

    The present study investigated whether semantic negative priming from single prime words depends on the availability of cognitive control resources. Participants with high vs. low working memory capacity (as assessed by their performance in complex span and attentional control tasks) were instructed to either attend to or ignore a briefly presented single prime word that was followed by either a semantically related or unrelated target word on which participants made a lexical decision. Individual differences in working memory capacity (WMC) mainly affected the processing of the ignored primes, but not the processing of the attended primes: While the latter produced reliable positive semantic priming for both high- and low-WMC participants, the former gave rise to reliable semantic negative priming only for high WMC participants, with low WMC participants showing the opposite positive priming effect. The present results extend previous findings in demonstrating that (a) single negative priming can reliably generalize to semantic associates of the prime words, and (b) a differential availability of cognitive control resources can reliably modulate the negative priming effect at a semantic level of representation. PMID:27621716

  8. Masked priming by misspellings: Word frequency moderates the effects of SOA and prime-target similarity.

    PubMed

    Burt, Jennifer S

    2016-02-01

    University students made lexical decisions to eight- or nine-letter words preceded by masked primes that were the target, an unrelated word, or a typical misspelling of the target. At a stimulus onset asynchrony (SOA) of 47 ms, primes that were misspellings of the target produced a priming benefit for low-, medium-, and high-frequency words, even when the misspelled primes were changed to differ phonologically from their targets. At a longer SOA of 80 ms, misspelled primes facilitated lexical decisions only to medium- and low-frequency targets, and a phonological change attenuated the benefit for medium-frequency targets. The results indicate that orthographic similarity can be preserved over changes in letter position and word length, and that the priming effect of misspelled words at the shorter SOA is orthographically based. Orthographic-priming effects depend on the quality of the orthographic learning of the target word. PMID:26530310

  9. UV-photoassisted etching of GaN in KOH

    SciTech Connect

    Cho, H.; Donovan, S.M.; Abernathy, C.R.; Lambers, E.S.; Pearton, S.J.; Auh, K.H.; Han, J.; Shul, R.J.

    1999-03-01

    The etch rate of GaN under ultraviolet-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias, and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n {approximately} 3 {times} 10{sup 16} cm{sup {minus}3}) GaN are {ge} 1,000 {angstrom} {center_dot} min{sup {minus}1}. The etching is diffusion-limited under the conditions with an activation energy of {approximately} 0.8 kCal{center_dot}mol{sup {minus}1}. The etched surfaces are rough, but retain their stoichiometry.

  10. Status of GaN HEMT performance and reliability

    NASA Astrophysics Data System (ADS)

    Green, Daniel S.; Brown, J. D.; Vetury, R.; Lee, S.; Gibb, S. R.; Krishnamurthy, K.; Poulton, M. J.; Martin, J.; Shealy, J. B.

    2008-02-01

    This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate technology features high performance advanced field plate structures, including a unit power cell producing high gain (21dB), high power density (3-5W/mm at 28V) and high efficiency (65-70 percent) at cellular frequencies. We will report on transistor and module performance relevant to applications ranging from high power, high bandwidth amplifiers, to switches and ICs for radar, electronic warfare, cellular infrastructure and homeland security. Additionally, we will report on reliability results that demonstrate capability for dependable, high voltage operation.

  11. GaN UV detectors for protein studies

    NASA Astrophysics Data System (ADS)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Manolopoulos, S.; O'Shea, V.

    2006-07-01

    GaN and its ternary alloy AlGaN have been investigated as UV detector materials for applications in protein structure studies. Interdigitated metal-semiconductor-metal (MSM) finger photodiodes, with finger spacings/widths of 5 and 10 μm, were successfully fabricated on six different GaN/AlGaN materials. Current-Voltage ( I- V) characteristics and spectral response measurements were made on completed devices. The results showed negligible difference in performance between the 5 μm finger spacing/width diode design and the 10 μm finger spacing/width diode design. Using these results, a 46 channel diode array, with a finger spacing/width of 10 μm, was successfully fabricated on 2.5 μm thick epitaxial GaN. This 46 channel diode array will be used in a protein structure experiment at the Daresbury SRS.

  12. ITON Schottky contacts for GaN based UV photodetectors

    NASA Astrophysics Data System (ADS)

    Vanhove, N.; John, J.; Lorenz, A.; Cheng, K.; Borghs, G.; Haverkort, J. E. M.

    2006-12-01

    Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I- V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10 3 at -1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation-recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on-off) switching operation, time constant and electron capture coefficient of the transition has been determined.

  13. Thermal functionalization of GaN surfaces with 1-alkenes.

    PubMed

    Schwarz, Stefan U; Cimalla, Volker; Eichapfel, Georg; Himmerlich, Marcel; Krischok, Stefan; Ambacher, Oliver

    2013-05-28

    A thermally induced functionalization process for gallium nitride surfaces with 1-alkenes is introduced. The resulting functionalization layers are characterized with atomic force microscopy and X-ray photoelectron spectroscopy and compared to reference samples without and with a photochemically generated functionalization layer. The resulting layers show very promising characteristics as functionalization for GaN based biosensors. On the basis of the experimental results, important characteristics of the functionalization layers are estimated and a possible chemical reaction scheme is proposed. PMID:23617559

  14. Photoluminescence of ion-implanted GaN

    NASA Technical Reports Server (NTRS)

    Pankove, J. I.; Hutchby, J. A.

    1976-01-01

    Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

  15. Optical properties of Yb ions in GaN epilayer

    NASA Astrophysics Data System (ADS)

    Jadwisienczak, W. M.; Lozykowski, H. J.

    2003-07-01

    In recent years, an important effort in semiconductor materials research has been devoted to III-nitrides semiconductors doped with rare earth ions due to the high potential of these materials in light-emitting device applications. Ytterbium (Yb 3+) is one of a few lanthanide ions which have not been investigated as an optically active center in these materials yet. In this paper we report the observation of luminescence from GaN films grown on sapphire (0 0 0 1) substrate by metal organic chemical vapor deposition and doped by implantation with Yb 3+ ions. The high resolution photo- and cathodoluminescence spectra of GaN:Yb 3+ were studied at different excitation conditions in temperatures ranging from 8 to 330 K and revealed weak thermal quenching. The luminescence emission lines are assigned to transitions between the spin-orbit levels 2F 5/2 → 2F 7/2 of Yb 3+ (4f 13). The analysis of the Yb luminescence spectra allowed us to suggest the energy level diagram of the crystal-field-split 4f 13 levels for the Yb ion center. The most probable lattice location of Yb in GaN is the substitutional Ga site. Furthermore, the luminescence kinetics of internal transitions of Yb 3+ incorporated in GaN was investigated by means of decay and time-resolved luminescence measurements. It was found that the ytterbium decay is non-exponential with dominant exponential term of ˜100 μs with little dependence on the ambient temperature. The results indicate that Yb-doped GaN epilayer may be suitable as a material for near infrared optoelectronic devices.

  16. TOPICAL REVIEW: Polar and nonpolar GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Daudin, Bruno

    2008-11-01

    Growth, structural and optical properties of GaN quantum dots are reviewed, with a special emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique makes it particularly adapted to growth of quantum dots, either polar (c-plane) or nonpolar (a-plane and m-plane). After describing in detail the growth process and analyzing the morphology of the dots, we review the optical properties of these nanostructures and discuss the properties of single dots.

  17. UV-Photoassisted Etching of GaN in KOH

    SciTech Connect

    Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

    1998-11-12

    The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

  18. Magnesium diffusion profile in GaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Benzarti, Z.; Halidou, I.; Bougrioua, Z.; Boufaden, T.; El Jani, B.

    2008-07-01

    The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a "home-made" reactor. Secondary Ion Mass Spectroscopy (SIMS) was used to visualise the Mg profiles in two kinds of multi-sublayer GaN structures. One structure was grown with a variable flow of Ga precursor (TMG) and the second one with a variable growth temperature. In both cases, the Mg dopant precursor (Cp 2Mg) flow was kept constant. Using the second Fick's law to fit the experimental SIMS data, we have deduced an increasing then a saturating Mg diffusion coefficient versus the Mg concentration. Mg incorporation was found to get higher for lower growth rate, i.e. when TMG flow is reduced. Furthermore, based on the temperature-related behaviour we have found that the activation energy for Mg diffusion coefficient in GaN was 1.9 eV. It is suggested that Mg diffuses via substitutional sites.

  19. Metal contacts on ZnSe and GaN

    SciTech Connect

    Duxstad, K J

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  20. Dislocation core structures in Si-doped GaN

    SciTech Connect

    Rhode, S. L. Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  1. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  2. Structure and electronic properties of GaN tubelike clusters and single-walled GaN nanotubes

    NASA Astrophysics Data System (ADS)

    Liu, Liren; Zou, Yanbo; Zhu, Hengjiang

    2015-06-01

    Extensive studies of the geometric structures, stabilities and electronic properties of gallium nitride (GaN)n tubelike clusters and single-walled GaN nanotubes (GaNNTs) were carried out using density-functional theory (DFT) calculations. A family of stable tubelike structures with Ga-N alternating arrangement was observed when n≥8 and their structural units (four-membered rings (4MRs) and six-membered rings (6MRs)) obey the general developing formula. The size-dependent properties of the frontier molecular orbital surfaces explain why the long and stable tubelike clusters can be obtained successfully. They also illustrate the reason why GaNNTs can be synthesized experimentally. Our results also reveal that the single-walled GaNNTs, which as semiconductors with a large bandgap, can be prepared by using the proper assembly of tubelike clusters.

  3. Priming effects in a subtropical forest soil

    NASA Astrophysics Data System (ADS)

    Li, Qianru; Sun, Yue; Xu, Xingliang

    2015-04-01

    Priming effects can accelerate decomposition of soil organic carbon (SOC) and thus have great potential to change SOC dynamics. Although temperature and addition of fresh substrates could affect the intensity and direction of priming, it remains unclear how their interactions affect priming. Therefore we conducted an incubation experiment using a subtropical forest soil. We incubated the soil for 10 days at two temperatures: 15oC and 25oC, with four treatments: CK (only adding water), G (13C-glucose addition), NT (13C-glucose and nitrate additions) and AM (13C-glucose and ammonium additions). The results showed that glucose addition significantly accelerated the decomposition of SOC in both temperatures, indicates that positive priming occurs in this subtropical soil. While negative priming was observed in soils with simultaneous additions of glucose and nitrogen addition, especially at 25oC. The effect of temperature on PE was not significant. This indicates that mining of nitrogen is a major mechanism responsible for priming in this subtropical soil and there is no strong interaction between temperature and substrate additions to induce priming.

  4. Automatic Semantic Priming Abnormalities in Schizophrenia

    PubMed Central

    Mathalon, Daniel H.; Roach, Brian J.; Ford, Judith M.

    2014-01-01

    Abnormal activation of semantic networks characterizes schizophrenia and can be studied using the N400 event-related potential (ERP). N400 is elicited by words that are not primed by the preceding context and provides a direct measure of the neural mechanisms underlying semantic priming. Semantic priming refers to facilitated semantic processing gained through pre-exposure to semantic context, which can happen automatically if the interval between the prime and target is very short. We predicted that (1) schizophrenia patients have overly inclusive semantic networks, reflected in a less negative than expected N400 to relatively unprimed words, and (2) schizophrenia patients are deficient in their use of semantic context, responding to primed words as if they were unprimed, reflected in a more negative than expected N400 to primed words. N400s were acquired from patients with DSM-IV schizophrenia (n=26) and age-matched healthy comparison subjects (n=29) performing a picture-word verification (match vs. non-match) task. Word targets were presented 325ms after a picture prime, which either matched (CAMEL→”camel”), or did not match (In Category: CAMEL→”cow; Out Category: CAMEL→”candle”) the prime. N400 data suggest that both patients and controls are sensitive to the difference between primed and unprimed words, but patients are less sensitive than controls. Similarly, N400 data suggest that both groups were sensitive to the subtler difference between classes of unprimed words (In Category versus Out Category picture-word non-matches), but patients are less sensitive, especially those with prominent negative symptoms. PMID:19995582

  5. Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots.

    PubMed

    Chung, Kunook; Yoo, Hyobin; Hyun, Jerome K; Oh, Hongseok; Tchoe, Youngbin; Lee, Keundong; Baek, Hyeonjun; Kim, Miyoung; Yi, Gyu-Chul

    2016-09-01

    The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple lift-off technique, which works reliably under various bending conditions. PMID:27346527

  6. Cherry Pit Primes Brad Pitt

    PubMed Central

    Burke, Deborah M.; Locantore, Jill Kester; Austin, Ayda A.; Chae, Bryan

    2008-01-01

    This study investigated why proper names are difficult to retrieve, especially for older adults. On intermixed trials, young and older adults produced a word for a definition or a proper name for a picture of a famous person. Prior production of a homophone (e.g., pit) as the response on a definition trial increased correct naming and reduced tip-of-the-tongue experiences for a proper name (e.g., Pitt) on a picture-naming trial. Among participants with no awareness of the homophone manipulation, older but not young adults showed these homophone priming effects. With a procedure that reduced awareness effects (Experiment 2), prior production of a homophone improved correct naming only for older adults, but speeded naming latency for both age groups. We suggest that representations of proper names are susceptible to weak connections that cause deficits in the transmission of excitation, impairing retrieval especially in older adults. We conclude that homophone production strengthens phonological connections, increasing the transmission of excitation. PMID:15016287

  7. Phonological and Orthographic Overlap Effects in Fast and Masked Priming

    PubMed Central

    Frisson, Steven; Bélanger, Nathalie N.; Rayner, Keith

    2014-01-01

    We investigated how orthographic and phonological information is activated during reading, using a fast priming task, and during single word recognition, using masked priming. Specifically, different types of overlap between prime and target were contrasted: high orthographic and high phonological overlap (track-crack), high orthographic and low phonological overlap (bear-gear), or low orthographic and high phonological overlap (fruit-chute). In addition, we examined whether (orthographic) beginning overlap (swoop-swoon) yielded the same priming pattern as end (rhyme) overlap (track-crack). Prime durations were 32 and 50ms in the fast priming version, and 50ms in the masked priming version, and mode of presentation (prime and target in lower case) was identical. The fast priming experiment showed facilitatory priming effects when both orthography and phonology overlapped, with no apparent differences between beginning and end overlap pairs. Facilitation was also found when prime and target only overlapped orthographically. In contrast, the masked priming experiment showed inhibition for both types of end overlap pairs (with and without phonological overlap), and no difference for begin overlap items. When prime and target only shared principally phonological information, facilitation was only found with a long prime duration in the fast priming experiment, while no differences were found in the masked priming version. These contrasting results suggest that fast priming and masked priming do not necessarily tap into the same type of processing. PMID:24365065

  8. Electrophysiology reveals semantic priming at a short SOA irrespective of depth of prime processing.

    PubMed

    Küper, Kristina; Heil, Martin

    2009-04-01

    The otherwise robust behavioral semantic priming effect is reduced to the point of being absent when a letter search has to be performed on the prime word. As a result the automaticity of semantic activation has been called into question. It is unclear, however, in how far automatic processes are even measurable in the letter search priming paradigm as the prime task necessitates a long prime-probe stimulus-onset asynchrony (SOA). In a modified procedure, a short SOA can be realized by delaying the prime task response until after participants have made a lexical decision on the probe. While the absence of lexical decision priming has already been demonstrated in this design it seems premature to draw any definite conclusions from this purely behavioral result since event related potential (ERP) measures have been shown to be a more sensitive index of semantic activation. Using the modified paradigm we thus recorded ERP in addition to lexical decision times. Stimuli were presented at two different SOAs (240 ms vs. 840 ms) and participants performed either a grammatical discrimination (Experiment 1) or a letter search (Experiment 2) on the prime. Irrespective of prime task, the modulation of the N400, the ERP correlate of semantic activation, provided clear-cut evidence of semantic processing at the short SOA. Implications for theories of semantic activation as well as the constraints of the delayed prime task procedure are discussed.

  9. Construction of monomers and chains assembled by 3d/4f metals and 4 Prime -(4-carboxyphenyl)-2,2 Prime :6 Prime ,2 Double-Prime -terpyridine

    SciTech Connect

    Yang, Juan; Hu, Rui-Xiang; Zhang, Man-Bo

    2012-12-15

    A series of transition metal and lanthanide complexes of 4 Prime -(4-carboxyphenyl)-2,2 Prime :6 Prime ,2 Double-Prime -terpyridine (HL, 1), namely [M(L){sub 2}]{center_dot}5H{sub 2}O (M=Ni, 2; Co, 3), [Zn(L){sub 2}]{sub n}{center_dot}0.5nH{sub 2}O (4) and [Ln(L){sub 3}]{sub n} (Ln=Nd, 5; Gd, 6; Er, 7) were hydrothermally synthesized and structurally characterized by single-crystal X-ray diffraction. Isomorphic compounds 2 and 3 are mononuclear molecules with two ligand chelating to the metal centers via tridentate terpyridyl, while compound 4 adopts 1D chain-like structure, in which five-coordinate zinc centers are surrounded by three ligands. Compounds 5-7 also display 1D chain-like structure, but the nine-coordinate lanthanide centers bonded by four ligands. Luminescent property indicates that compound 4 exhibits photoluminescence in the solid state at room temperature. - Graphical abstract: Six complexes of 4 Prime -(4-carboxyphenyl)-2,2 Prime :6 Prime ,2 Double-Prime -terpyridine were synthesized via assembly with transition metal and lanthanide ions, respectively. Among them, [Ni(L){sub 2}]{center_dot}5H{sub 2}O and [Co(L){sub 2}]{center_dot}5H{sub 2}O are monomers, while [Zn(L){sub 2}]{sub n}{center_dot}0.5nH{sub 2}O and [Ln(L){sub 3}]{sub n} display chain-like structures. Highlights: Black-Right-Pointing-Pointer Compounds of 4 Prime -(4-carboxyphenyl)-2,2 Prime :6 Prime ,2 Double-Prime -terpyridine were synthesized. Black-Right-Pointing-Pointer [Ni(L){sub 2}]{center_dot}5H{sub 2}O and [Co(L){sub 2}]{center_dot}5H{sub 2}O are monomers. Black-Right-Pointing-Pointer [Zn(L){sub 2}]{sub n}{center_dot}0.5nH{sub 2}O and [Ln(L){sub 3}]{sub n} display chain-like structures.

  10. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

    PubMed

    Kang, Eun-Sil; Ju, Jin-Woo; Kim, Jin Soo; Ahn, Haeng-Keun; Lee, June Key; Kim, Jin Hyeok; Shin, Dong-Chan; Lee, In-Hwan

    2007-11-01

    InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

  11. Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Lee, Donghyun; Shin, In-Su; Jin, Lu; Kim, Donghyun; Park, Yongjo; Yoon, Euijoon

    2016-06-01

    Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30 nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728 arcsec from 1005 arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.

  12. Structural effects of field emission from GaN nanofilms on SiC substrates

    SciTech Connect

    Chen, Cheng-Cheng; Wang, Ru-Zhi Zhu, Man-Kang; Yan, Hui; Liu, Peng; Wang, Bi-Ben

    2014-04-21

    GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

  13. Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Yamaoka, Yuya; Ubukata, Akinori; Arimura, Tadanobu; Piao, Guanxi; Yano, Yoshiki; Tokunaga, Hiroki; Tabuchi, Toshiya

    2016-05-01

    The current situation and next challenge in GaN metal organic chemical vapor deposition (MOCVD) for electron devices of both GaN on Si and GaN on GaN are presented. We have examined the possibility of increasing the growth rate of GaN on 200-mm-diameter Si by using a multiwafer production MOCVD machine, in which the vapor phase parasitic reaction is well controlled. The impact of a high-growth-rate strained-layer-superlattice (SLS) buffer layer is presented in terms of material properties. An SLS growth rate of as high as 3.46 µm/h, which was 73% higher than the current optimum, was demonstrated. As a result, comparable material properties were obtained. Next, a typical result of GaN doped with Si of 1 × 1016 cm-3 grown at the growth rate of 3.7 µm/h is shown. For high-voltage application, we need a thick high-purity GaN drift layer with a low carbon concentration, of less than 1016 cm-3. It is shown that achieving a high growth rate by precise control of the vapor phase reaction is still challenge in GaN MOCVD.

  14. Competitor rule priming: evidence for priming of task rules in task switching.

    PubMed

    Katzir, Maayan; Ori, Bnaya; Hsieh, Shulan; Meiran, Nachshon

    2015-05-01

    In task-switching experiments, participants switch between task rules, and each task rule describes how responses are mapped to stimulus information. Importantly, task rules do not pertain to any specific response but to all possible responses. This work examined the hypothesis that task rules, as wholes, rather than (just) specific responses are primed by their execution, such that, in the following trial, response conflicts are exacerbated when the competing responses are generated by these recently primed rules, and performance becomes relatively poor. This hypothesis was supported in two task-switching experiments and re-analyses of additional three published experiments, thus indicating Competitor Rule Priming. Importantly, the Competitor Rule-Priming effect was independent of response repetition vs. switch, suggesting that it reflects the priming of the entire task rule rather than the priming (or suppression) of specific responses. Moreover, this effect was obtained regardless of Backward Inhibition, suggesting these effects are unrelated.

  15. Conceptual priming with pictures and environmental sounds.

    PubMed

    Kim, Yongju; Porter, Anne Marie; Goolkasian, Paula

    2014-02-01

    A series of experiments was conducted to examine conceptual priming within and across modalities with pictures and environmental sounds. In Experiment 1, we developed a new multimodal stimulus set consisting of two picture and sound exemplars that represented 80 object items. In Experiments 2, we investigated whether categorization of the stimulus items would be facilitated by picture and environmental sound primes that were derived from different exemplars of the target items; and in Experiments 3 and 4, we tested the additional influence on priming when trials were consolidated within a target modality and the inter stimulus interval was lengthened. The results demonstrated that target categorization was facilitated by the advanced presentation of conceptually related exemplars, but there were differences in effectiveness when pictures and sounds appeared as primes.

  16. Russian Prime Minister Calls the Station Crew

    NASA Video Gallery

    Russian Prime Minister Vladimir Putin called the International Space Station from the Russian Mission Control Center in Korolev, Russia, on Jan. 11, 2011. Putin also offered his condolences to ISS ...

  17. Preserved conceptual priming in Alzheimer's disease.

    PubMed

    Martins, Carla A R; Lloyd-Jones, Toby J

    2006-10-01

    We assessed Alzheimer's disease (AD) and healthy older adult control (HC) group performance on: (1) a conceptual priming task, in which participants had to make a semantic decision as to whether a degraded picture of an object encountered previously belonged to the category of living or non-living things; and (2) a recognition memory task. The AD group showed a dissociation between impaired performance on the recognition task and preserved priming for semantic decisions to degraded pictures. We argue that it is not whether priming is conceptual or perceptual that is important for the observation of priming in AD, rather it is the nature of the response that is required (c.f., Gabrieli et al., 1999). PMID:17172179

  18. Preserved verb generation priming in global amnesia.

    PubMed

    Seger, C A; Rabin, L A; Zarella, M; Gabrieli, J D

    1997-08-01

    In the verb generation task, participants are presented with nouns and generate for each one an appropriate verb. Raichle et al. (Cerebral Cortex, 1994, 4, 8-26) found that when participants generated verbs to repeated nouns, generation latencies were reduced and different patterns of brain activation were present. In order to examine whether verb generation priming is dependent or independent of declarative memory, verb generation priming was compared between 13 amnesic (seven with alcoholic Korsakoff's syndrome, six with other etiologies) and 19 control participants (10 with a history of alcoholism). Both amnesic and control participants became faster across blocks on repeated nouns and slowed when novel nouns were introduced. Priming was verb specific for both groups: it was equivalent whether generated to a repeated or a novel noun. Verb generation priming, therefore, can occur independently of declarative memory.

  19. Suggestibility and negative priming: two replication studies.

    PubMed

    David, Daniel; Brown, Richard J

    2002-07-01

    Research suggests that inhibiting the effect of irrelevant stimuli on subsequent thought and action (cognitive inhibition) may be an important component of suggestibility. Two small correlation studies were conducted to address the relationship between different aspects of suggestibility and individual differences in cognitive inhibition, operationalized as the degree of negative priming generated by to-be-ignored stimuli in a semantic categorization task. The first study found significant positive correlations between negative priming, hypnotic suggestibility, and creative imagination; a significant negative correlation was obtained between negative priming and interrogative suggestibility, demonstrating the discriminant validity of the study results. The second study replicated the correlation between negative priming and hypnotic suggestibility, using a different suggestibility measurement procedure that assessed subjective experience and hypnotic involuntariness as well as objective responses to suggestions. These studies support the notion that the ability to engage in cognitive inhibition may be an important component of hypnotic responsivity and maybe of other forms of suggestibility.

  20. OVATION Prime Model and "Aurorasaurus" Auroral Observations

    NASA Video Gallery

    This video shows the auroral oval, as modeled using OVATION Prime (2013), along with citizen science reports collected by the Aurorasaurus project for the St. Patrick’s Day storm over March 17-19, ...

  1. NASA and OPTIMUS PRIME Team Up

    NASA Video Gallery

    NASA and OPTIMUS PRIME have teamed up to educate! Kids everywhere created videos showing how NASA technology is truly more than meets the eye, and now you can vote on your favorite! Visit http://ip...

  2. Spectroscopic and photophysical properties of complexes of 4{prime}-ferrocenyl-2,2{prime}:6{prime},2{double_prime}-terpyridine and related ligands

    SciTech Connect

    Hutchinson, K.; Morris, J.C.; Nile, T.A.; Walsh, J.L.; Thompson, D.W.; Petersen, J.D.; Schoonover, J.R.

    1999-05-17

    4{prime}-(Ferrocenyl)-2,2{prime}:6{prime}2{double_prime}-terpyridine (Fctpy) and 4{prime}-(4-pyridyl)-2,2{prime}:6{prime},2{double_prime}-terpyridine (pytpy) were prepared from the corresponding ferrocene- and pyridinecarboxaldehyle and 2-acetylpyridine using the Krohnke synthetic methodology. Metal complexes, [M(Fctpy){sub 2}](PF{sub 6}){sub 2} (M = Ru, Fe, Zn), [Ru(tpy)(Fctpy)](PF{sub 6}){sub 2} (tpy = 2,2{prime}:6{prime},6{double_prime}-terpyridine), and [Ru(pytpy){sub 2}](PF{sub 6}){sub 2} were prepared and characterized. Cyclic voltammetric analysis indicated Ru(III/II) and ferrocenium/ferrocene redox couples near expected potentials (Ru{sup III/II} {approximately}1.3 V and ferrocenium/ferrocene {approximately}0.6 V vs Ag/AgCl). In addition to dominant {pi}{sub tpy} {r_arrow} {pi}{sub tpy}{sup *} UV absorptions near 240 and 280 nm and d{sub {pi}}{sup Ru} {r_arrow} {pi}{sub tpy}{sup *} MLCT absorptions around 480 nm, the complexes [Ru(Fctpy){sub 2}](PF{sub 6}){sub 2} and [Ru(tpy)(Fctpy)](PF{sub 6}){sub 2} exhibit an unusual absorption band around 530 nm. Resonance Raman measurements indicate that this band is due to a {sup 1}[(d({pi}){sub Fc}){sup 6}] {r_arrow} {sup 1}[(d({pi}){sub Fc}){sup 5}({pi}{sup *}{sub tpy}{sup Ru}){sup 1}] transition. For [Ru(Fctpy){sub 2}](PF{sub 6}){sub 2} and [Ru(tpy)(Fctpy)](PF{sub 6}){sub 2}, excited-state emission and lifetime measurements indicated an upper-limit emission quantum yield of 0.003 and an upper-limit emission lifetime of 0.025 {micro}s. The influence of the ferrocenyl site on excited-state decay is discussed, and an excited-state energy level diagram is proposed.

  3. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

    NASA Astrophysics Data System (ADS)

    Su, Ming; Chen, Chingchi; Rajan, Siddharth

    2013-07-01

    GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

  4. Step-induced misorientation of GaN grown on r-plane sapphire

    SciTech Connect

    Smalc-Koziorowska, J.; Dimitrakopulos, G. P.; Sahonta, S.-L.; Komninou, Ph.; Tsiakatouras, G.; Georgakilas, A.

    2008-07-14

    In the growth of nonpolar (1120) a-plane GaN on r-plane (1102) sapphire by plasma-assisted molecular beam epitaxy, misoriented crystallites are observed close to the substrate. They have average diameter {approx}10 nm and are oriented with the (0001){sub GaN} plane approximately parallel to the (2113){sub sapph.} plane and [0110]{sub GaN} parallel [1101]{sub sapph.}. This semipolar orientation is promoted by a low misfit (2.4%) between (1011){sub GaN} and (1210){sub sapph.} planes. Its introduction, after nitridation treatment, is due to GaN nucleation on (2113){sub sapph.} step facets inclined at 26 deg. relative to the r-plane. Two variants are observed, leading to twinning when they abut inside the epilayer.

  5. Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces

    SciTech Connect

    Romanyuk, O. Jiříček, P.; Bartoš, I.; Paskova, T.

    2014-09-14

    Polarity of semipolar GaN(101⁻1) (101⁻1⁻) and GaN(202⁻1) (202⁻1⁻) surfaces was determined with X-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the (0001) normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the GaN(101⁻1) and GaN(202⁻1) crystals if referred to (0001) crystal axes. For polarity determinations of all important GaN(h0h⁻l) semipolar surfaces, the above given polar angle range is suitable.

  6. YU238259 Is a Novel Inhibitor of Homology-dependent DNA Repair that Exhibits Synthetic Lethality and Radiosensitization in Repair-deficient Tumors

    PubMed Central

    Stachelek, Gregory C.; Peterson-Roth, Elizabeth; Liu, Yanfeng; Fernandez, Rafael J.; Pike, Luke R. G.; Qian, Jack M.; Abriola, Laura; Hoyer, Denton; Hungerford, William; Merkel, Janie; Glazer, Peter M.

    2015-01-01

    Radiation therapy and DNA-damaging chemotherapy are frequently utilized in the treatment of solid tumors. Innate or acquired resistance to these therapies remains a major clinical challenge in oncology. The development of small molecules that sensitize cancers to established therapies represents an attractive approach to extending survival and quality of life in patients. Here, we demonstrate that YU238259, a member of a novel class of DNA double-strand break repair inhibitors, exhibits potent synthetic lethality in the setting of DNA damage response and DNA repair defects. YU238259 specifically inhibits homology-dependent DNA repair (HDR), but not non-homologous end-joining (NHEJ), in cell-based GFP reporter assays. Treatment with YU238259 is not only synergistic with ionizing radiation (IR), etoposide, and PARP inhibition, but this synergism is heightened by BRCA2-deficiency. Further, growth of BRCA2-deficient human tumor xenografts in nude mice is significantly delayed by YU238259 treatment even in the absence of concomitant DNA-damaging therapy. The cytotoxicity of these small molecules in repair-deficient cells results from an accumulation of unresolved DNA double-strand breaks. These findings suggest that YU238259 or related small molecules may have clinical benefit to patients with advanced BRCA2-negative tumors, either as a monotherapy or as an adjuvant to radiotherapy and certain chemotherapies. PMID:26116172

  7. GaN: From three- to two-dimensional single-layer crystal and its multilayer van der Waals solids

    NASA Astrophysics Data System (ADS)

    Onen, A.; Kecik, D.; Durgun, E.; Ciraci, S.

    2016-02-01

    Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g -GaN ) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g -GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g -GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g -GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g -GaN are preserved when g -GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g -GaN , is found to be an excellent substrate for growing g -GaN . Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g -GaN , and they can display electronic and optical properties that can be controlled by the number of g -GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g -GaN layers.

  8. Priming addition facts with semantic relations.

    PubMed

    Bassok, Miriam; Pedigo, Samuel F; Oskarsson, An T

    2008-03-01

    Results from 2 relational-priming experiments suggest the existence of an automatic analogical coordination between semantic and arithmetic relations. Word pairs denoting object sets served as primes in a task that elicits "obligatory" activation of addition facts (5 + 3 activates 8; J. LeFevre, J. Bisanz, & L. Mrkonjic, 1988). Semantic relations between the priming words were either aligned or misaligned with the structure of addition (M. Bassok, V. M. Chase, & S. A. Martin, 1998). Obligatory activation of addition facts occurred when the digits were primed by categorically related words (tulips-daisies), which are aligned with addition, but did not occur when the digits were primed by unrelated words (hens-radios, Experiment 1) or by functionally related words (records-songs, Experiment 2), which are misaligned with addition. These findings lend support to the viability of automatic analogical priming (B. A. Spellman, K. J. Holyoak, & R. G. Morrison, 2001) and highlight the relevance of arithmetic applications to theoretical accounts of mental arithmetic. PMID:18315410

  9. An ERP Investigation of Orthographic Priming with Relative-Position and Absolute-Position Primes

    PubMed Central

    Grainger, Jonathan; Holcomb, Phillip J.

    2009-01-01

    The present study used event-related potentials to examine the time-course of relative-position and absolute-position orthographic priming. Relative-position priming was examined using primes formed by a concatenated subset of the target word’s letters (e.g., cllet/COLLECT vs. dlema/COLLECT), and absolute-position priming was investigated using hyphenated versions of these primes (c-lle-t/COLLECT vs. d-lem-a/COLLECT). Both manipulations modulated the ERP waveform starting at around 100 ms post-target onset and extending into the N400 component. The first clear manifestation of priming was found in the N250 component, where hyphenated primes were found to have an earlier, more robust and more widely distributed effect than the concatenated primes. On the other hand, both prime types had similar effects on N400 amplitude. These results provide important information about the time-course of activation of location-specific and location-invariant (word-centered) orthographic representations during visual word recognition. PMID:19285966

  10. Relational integrativity of prime-target pairs moderates congruity effects in evaluative priming.

    PubMed

    Ihmels, Max; Freytag, Peter; Fiedler, Klaus; Alexopoulos, Theodore

    2016-05-01

    In evaluative priming, positive or negative primes facilitate reactions to targets that share the same valence. While this effect is commonly explained as reflecting invariant structures in semantic long-term memory or in the sensorimotor system, the present research highlights the role of integrativity in evaluative priming. Integrativity refers to the ease of integrating two concepts into a new meaningful compound representation. In extended material tests using paired comparisons from two pools of positive and negative words, we show that evaluative congruity is highly correlated with integrativity. Therefore, in most priming studies, congruity and integrativity are strongly confounded. When both aspects are disentangled by manipulating congruity and integrativity orthogonally, three priming experiments show that evaluative-priming effects were confined to integrative prime-target pairs. No facilitation of prime-congruent targets was obtained for non-integrative stimuli. These findings are discussed from a broader perspective on priming conceived as flexible, context-dependent, and serving a generative adaptation function. PMID:26689705

  11. Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

    PubMed

    Zhang, Jin; Li, Senlin; Xiong, Hui; Tian, Wu; Li, Yang; Fang, Yanyan; Wu, Zhihao; Dai, Jiangnan; Xu, Jintong; Li, Xiangyang; Chen, Changqing

    2014-01-01

    With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.

  12. Characterization of Flavonoid 3[prime],5[prime]-Hydroxylase in Microsomal Membrane Fraction of Petunia hybrida Flowers.

    PubMed Central

    Menting, JGT.; Scopes, R. K.; Stevenson, T. W.

    1994-01-01

    We have detected a flavonoid 3[prime],5[prime]-hydroxylase (F3[prime],5[prime]H) in the microsomal fraction of Petunia hybrida flowers. Activity varied with the development of flowers, peaking immediately prior to and during anthesis, but was absent in mature flowers. F3[prime],5[prime]H activity in flower extracts from genetically defined floral color mutants correlated strictly with the genotypes Hf1 and Hf2. No activity was detected in flowers from mutants homozygous recessive for both alleles. F3[prime],5[prime]H activity was dependent on NADPH and molecular oxygen; there was only slight activity with NADH. The enzyme catalyzes the hydroxylation of 5,7,4[prime]-trihydroxyflavonone at the 3[prime] and 5[prime] positions, and of 5,7,3[prime],4[prime]-tetrahydroxyflavonone and dihydroquercetin at the 5[prime] position. Hydroxylase activity was inhibited by plant growth regulators (1-aminobenzotriazole and tetcyclacis) and by CO, N-ethylmaleimide, diethyldithiocarbamate, and cytochrome (Cyt) c. Activity was not affected by diethylpyrocarbonate or phenylmethylsulfonyl fluoride, but was enhanced by 2-mercaptoethanol. A polyclonal antibody that inhibits higher plant NADPH-Cyt P450 reductase inhibited the F3[prime],5[prime]H. The data are consistent with the suggestion that the P. hybrida F3[prime],5[prime]H is a monooxygenase consisting of a Cyt P450 and a NADPH-Cyt P-450 reductase. Cyts P450 were detected in microsomal membranes and in solubilized detergent extracts of these membranes. F3[prime],5[prime]H activity was sensitive to low concentrations of all detergents tested, and therefore solubilization of the active enzyme was not achieved. Reaction products other than flavanones were observed in F3[prime],5[prime]H assays and these may be formed by enzymic oxidation of flavanones. The possibility of a microsomal flavone synthase of a type that has not been described in P. hybrida is discussed. PMID:12232356

  13. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-10-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  14. Features of molecular beam epitaxy of the GaN (0001) and GaN (0001-bar) layers with the use of different methods of activation of nitrogen

    SciTech Connect

    Mizerov, A. M. Jmerik, V. N.; Kaibyshev, V. K.; Komissarova, T. A.; Masalov, S. A.; Ivanov, S. V.

    2009-08-15

    The results of comparative studies of the growth kinetics of the GaN layers of different polarity during ammonia molecular beam epitaxy and plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen with the use of sapphire substrates and GaN(0001-bar)/c-Al{sub 2}O{sub 3} templates grown by gas-phase epitaxy from metalorganic compounds are presented. The possibility is shown of obtaining the GaN layers with an atomically smooth surface during molecular beam epitaxy with plasma activation of nitrogen. For this purpose, it is suggested to carry out the growth in conditions enriched with metal near the mode of formation of the Ga drops at a temperature close to the decomposition temperature of GaN (TS {approx} 760 deg. C). The conclusion is made that an increase in the growth temperature positively affects the structural, optical, and electrical properties of the GaN (0001-bar) layers. A high quality of the GaN (0001) films grown by the PA MBE method at a low temperature of {approx}700 deg. C on the GaN/c-Al{sub 2}O{sub 3} templates is shown.

  15. An Electrophysiological Investigation of Early Effects of Masked Morphological Priming

    ERIC Educational Resources Information Center

    Morris, Joanna; Grainger, Jonathan; Holcomb, Phillip J.

    2008-01-01

    This experiment examined event-related responses to targets preceded by semantically transparent morphologically related primes (e.g., farmer-farm), semantically opaque primes with an apparent morphological relation (corner-corn), and orthographically, but not morphologically, related primes (scandal-scan) using the masked priming technique…

  16. Processing Speaker Variability in Repetition and Semantic/Associative Priming

    ERIC Educational Resources Information Center

    Lee, Chao-Yang; Zhang, Yu

    2015-01-01

    The effect of speaker variability on accessing the form and meaning of spoken words was evaluated in two short-term priming experiments. In the repetition priming experiment, participants listened to repeated or unrelated prime-target pairs, in which the prime and target were produced by the same speaker or different speakers. The results showed…

  17. Decomposition of Repetition Priming Components in Picture Naming

    ERIC Educational Resources Information Center

    Francis, Wendy S.; Corral, Nuvia I.; Jones, Mary L.; Saenz, Silvia P.

    2008-01-01

    Cognitive mechanisms underlying repetition priming in picture naming were decomposed in several experiments. Sets of encoding manipulations meant to selectively prime or reduce priming in object identification or word production components of picture naming were combined factorially to dissociate processes underlying priming in picture naming.…

  18. Masked Inhibitory Priming in English: Evidence for Lexical Inhibition

    ERIC Educational Resources Information Center

    Davis, Colin J.; Lupker, Stephen J.

    2006-01-01

    Predictions derived from the interactive activation (IA) model were tested in 3 experiments using the masked priming technique in the lexical decision task. Experiment 1 showed a strong effect of prime lexicality: Classifications of target words were facilitated by orthographically related nonword primes (relative to unrelated nonword primes) but…

  19. Semantic Priming for Coordinate Distant Concepts in Alzheimer's Disease Patients

    ERIC Educational Resources Information Center

    Perri, R.; Zannino, G. D.; Caltagirone, C.; Carlesimo, G. A.

    2011-01-01

    Semantic priming paradigms have been used to investigate semantic knowledge in patients with Alzheimer's disease (AD). While priming effects produced by prime-target pairs with associative relatedness reflect processes at both lexical and semantic levels, priming effects produced by words that are semantically related but not associated should…

  20. Priming Ability-Relevant Social Categories Improves Intellectual Test Performance

    ERIC Educational Resources Information Center

    Lin, Phoebe S.; Kennette, Lynne N.; Van Havermaet, Lisa R.; Frank, Nichole M.; McIntyre, Rusty B.

    2012-01-01

    Research shows that priming affects behavioral tasks; fewer studies, however, have been conducted on how social category primes affect cognitive tasks. The present study aimed to examine the effects of social category primes on math performance and word recall. It was hypothesized that Asian prime words would improve math performance and word…

  1. The priming effect of military service on creativity performance.

    PubMed

    Chiu, Fa-Chung; Tu, Priscilla L P

    2014-04-01

    This study investigated the service priming effect on creativity performance. In three experiments, the service priming was manipulated in three ways (Army priming, Air Force priming, and a Neutral condition). Participants' performances on the Chinese Remote Associates Test (CRAT), insight problems, and critical thinking problems were accordingly measured in each experiment. Results showed that the Air Force priming improved creativity and the Army priming enhanced critical thinking. The results suggest that the constructions and processes of these two manipulations are different. In addition, results also suggested that the branch of military service moderates the relationship between the service priming and the performance of creativity. PMID:24897904

  2. Visible fiber lasers excited by GaN laser diodes

    NASA Astrophysics Data System (ADS)

    Fujimoto, Yasushi; Nakanishi, Jun; Yamada, Tsuyoshi; Ishii, Osamu; Yamazaki, Masaaki

    2013-07-01

    This paper describes and discusses visible fiber lasers that are excited by GaN laser diodes. One of the attractive points of visible light is that the human eye is sensitive to it between 400 and 700 nm, and therefore we can see applications in display technology. Of course, many other applications exist. First, we briefly review previously developed visible lasers in the gas, liquid, and solid-state phases and describe the history of primary solid-state visible laser research by focusing on rare-earth doped fluoride media, including glasses and crystals, to clarify the differences and the merits of primary solid-state visible lasers. We also demonstrate over 1 W operation of a Pr:WPFG fiber laser due to high-power GaN laser diodes and low-loss optical fibers (0.1 dB/m) made by waterproof fluoride glasses. This new optical fiber glass is based on an AlF3 system fluoride glass, and its waterproof property is much better than the well known fluoride glass of ZBLAN. The configuration of primary visible fiber lasers promises highly efficient, cost-effective, and simple laser systems and will realize visible lasers with photon beam quality and quantity, such as high-power CW or tunable laser systems, compact ultraviolet lasers, and low-cost ultra-short pulse laser systems. We believe that primary visible fiber lasers, especially those excited by GaN laser diodes, will be effective tools for creating the next generation of research and light sources.

  3. GaN Nanowire Devices: Fabrication and Characterization

    NASA Astrophysics Data System (ADS)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  4. Devices for medical diagnosis with GaN lasers

    NASA Astrophysics Data System (ADS)

    Kwasny, Miroslaw; Mierczyk, Zygmunt

    2003-10-01

    This paper presents laser-induced fluroescence method (LIF) employing endogenous ("autofluroescence") and exogenous fluorophores. LIF is applied for clinical diagnosis in dermatology, gynaecology, urology, lung tumors as well as for early dentin caries. We describe the analysers with He-Ne, He-Cd, and SHG Nd:YAG lasers and new generation systems based on blue semiconductor GaN lasers that have been implemented into clinical practice till now. The LIF method, fundamental one for many medical applications, with excitation radiation of wavelength 400 nm could be appl,ied only using tunable dye lasers or titanium lasers adequte for laboratory investigations. Development of GaN laser shows possibility to design portable, compact diagnostic devices as multi-channel analysers of fluorescence spectra and surface imaging devoted to clinical application. The designed systems used for spectra measurement and registration of fluorescence images include lasers of power 5-30 mW and generate wavelengths of 405-407 nm. They are widely used in PDT method for investigation of superficial distribution of accumulation kinetics of all known photosensitizers, their elimination, and degradation as well as for treatment of superficial lesions of mucosa and skin. Excitation of exogenous porphrins in Soret band makes possible to estimate their concentration and a period of healthy skin photosensitivity that occurs after photosensitiser injections. Due to high sensitivity of spectrum analysers, properties of photosensitisers can be investigated in vitro (e.g. their aggregation, purity, chromatographic distributions) when their concentrations are 2-3 times lower in comparison to concentrations investigated with typical spectrofluorescence methods. Dentistry diagnosis is a new field in which GaN laser devices can be applied. After induction with blue light, decreased autofluorescence intensity can be observed when dentin caries occur and strong characteristic bands of endogenous porphyrines

  5. Radiation enhanced basal plane dislocation glide in GaN

    NASA Astrophysics Data System (ADS)

    Yakimov, Eugene B.; Vergeles, Pavel S.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

    2016-05-01

    A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10 nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

  6. Chlorine-based plasma etching of GaN

    SciTech Connect

    Shul, R.J.; Briggs, R.D.; Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W.; Constantine, C.; Baratt, C.

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  7. High field effects of GaN HEMTs.

    SciTech Connect

    Barker, Joy; Shul, Randy John

    2004-09-01

    This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with varying lengths and widths (8x2, 10x3, 12x3, 12x4, 15x5, and 16x4 {micro}m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 {Omega} environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5x10{sup 7} cm/s at 180 kV/cm and 3.1x10{sup 7} cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively. These experimental drift velocities mark the highest velocities measured in these materials to date and confirm

  8. Role of oxygen at screw dislocations in GaN.

    PubMed

    Arslan, I; Browning, N D

    2003-10-17

    Here we report the first direct atomic scale experimental observations of oxygen segregation to screw dislocations in GaN using correlated techniques in the scanning transmission electron microscope. The amount of oxygen present in each of the three distinct types of screw dislocation core is found to depend on the evolution and structure of the core, and thus gives rise to a varying concentration of localized states in the band gap. Contrary to previous theoretical predictions, the substitution of oxygen for nitrogen is observed to extend over many monolayers for the open core dislocation. PMID:14611410

  9. H enhancement of N vacancy migration in GaN.

    SciTech Connect

    Wixom, Ryan R.; Wright, Alan Francis

    2005-06-01

    We have used density functional theory to investigate diffusion of V{sub N}{sup +} in the presence of H{sup +}. Optimal migration pathways were determined using the climbing image nudged elastic band and directed dimer methods. Our calculations indicate that the rate-limiting barrier for VN{sub N}{sup +} migration will be reduced by 0.58 eV by interplay with H{sup +}, which will enhance migration by more than an order of magnitude at typical GaN growth temperatures.

  10. Stress related aspects of GaN technology physics

    NASA Astrophysics Data System (ADS)

    Suhir, Ephraim

    2015-03-01

    Simple, easy-to-use and physically meaningful analytical models have been developed for the assessment of the combined effect of the lattice and thermal mismatch on the induced stresses in an elongated bi-material assembly, as well as on the thermal mismatch on the thermal stresses in a tri-material assembly, in which the lattice mismatched stresses are eliminated in one way or another. This could be done, e.g., by using a polished or an etched substrate. The analysis is carried out in application to Gallium Nitride (GaN)-Silicon Carbide (SiC) and GaN-diamond (C) filmsubstrate assemblies. The calculated data are obtained, assuming that no annealing or other stress reduction means is applied. The data agree reasonably well with the reported (available) in-situ measurements. The most important conclusion from the computed data is that even if a reasonably good lattice match takes place (as, e.g., in the case of a GaN film fabricated on a SiC substrate, when the mismatch strain is only about 3%) and, in addition, the temperature change (from the fabrication/growth temperature to the operation temperature) is significant (as high as 1000 °C), the thermal stresses are still considerably lower than the lattice-mismatch stresses. Although there are structural and technological means for further reduction of the lattice-mismatch stresses (e.g., by high temperature annealing or by providing one or more buffering layers, or by using patterned or porous substrates), there is still a strong incentive to eliminate completely the lattice mismatch stresses. This seems to be indeed possible, if polished or otherwise flattened (e.g., chemically etched) substrates and sputter deposited GaN film is employed. In such a case only thermal stresses remain, but even these could be reduced, if necessary, by using compliant buffering layers, including layers of variable compliance, or by introducing variable compliance into the properly engineered substrate. In any event, it is expected

  11. Photoluminescence enhancement from GaN by beryllium doping

    NASA Astrophysics Data System (ADS)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  12. Modulation of 2{prime}-5{prime} oligoadenylate synthetase by environmental stress in the marine sponge Geodia cydonium

    SciTech Connect

    Schroeder, H.C.; Wiens, M.; Mueller, W.E.G.; Kuusksalu, A.; Kelve, M.

    1997-07-01

    Recently the authors established the presence of relatively high amounts of 2{prime}-5{prime} oligoadenylates (2{prime}-5{prime} A) and 2{prime}-5{prime} oligoadenylate synthetase (2{prime}-5{prime} A synthetase) in the marine sponge Geodia cydonium. Here they determined by applying radioimmunoassay and high-performance liquid chromatographical methods that the concentration of 2{prime}-5{prime} A synthetase change following exposure of G. cydonium tissue to environmental stress. The 2{prime}-5{prime} A content and the activity of 2{prime}-5{prime} A synthetase, present in crude sponge extract, increase by up to three-fold after treating sponge cubes for 2 h with natural stressors including heat shock (26 C), cold shock (6 C), pH shock (pH 6), and hypertonic shock and subsequent incubation for 18 h under ambient conditions (16 C). No response was observed after exposure of sponges to an alkaline (pH 10) or hypotonic environment. Similar changes have been found for the expression of heat shock protein HSP70 in G. cydonium. These results show that 2{prime}-5{prime} A in sponges may be useful as a novel biomarker for environmental monitoring.

  13. Smelly primes – when olfactory primes do or do not work

    PubMed Central

    Smeets, M. A. M.; Dijksterhuis, G. B.

    2014-01-01

    In applied olfactory cognition the effects that olfactory stimulation can have on (human) behavior are investigated. To enable an efficient application of olfactory stimuli a model of how they may lead to a change in behavior is proposed. To this end we use the concept of olfactory priming. Olfactory priming may prompt a special view on priming as the olfactory sense has some unique properties which make odors special types of primes. Examples of such properties are the ability of odors to influence our behavior outside of awareness, to lead to strong affective evaluations, to evoke specific memories, and to associate easily and quickly to other environmental stimuli. Opportunities and limitations for using odors as primes are related to these properties, and alternative explanations for reported findings are offered. Implications for olfactory semantic, construal, behavior and goal priming are given based on a brief overview of the priming literature from social psychology and from olfactory perception science. We end by formulating recommendations and ideas for a future research agenda and applications for olfactory priming. PMID:24575071

  14. Priming tool actions: Are real objects more effective primes than pictures?

    PubMed

    Squires, Scott D; Macdonald, Scott N; Culham, Jody C; Snow, Jacqueline C

    2016-04-01

    Humans are faster to grasp an object such as a tool if they have previewed the same object beforehand. This priming effect is strongest when actors gesture the use of the tool rather than simply move it, possibly because the previewed tool activates action-specific routines in dorsal-stream motor networks. Here, we examined whether real tools, which observers could physically act upon, serve as more potent primes than two-dimensional images of tools, which do not afford physical action. Participants were presented with a prime stimulus that could be either a real tool or a visually matched photograph of a tool. After a brief delay, participants interacted with a real tool target, either by 'grasping to move,' or 'grasping to use' it. The identities of the prime and target tools were either the same (congruent trials; e.g., spatula-spatula) or different (incongruent trials; e.g., whisk-spatula). As expected, participants were faster to initiate grasps during trials when they had to move the tool rather than gesture its use. Priming effects were observed for grasp-to-use, but not grasp-to-move, responses. Surprisingly, however, both pictures of tools and real tools primed action responses equally. Our results indicate that tool priming effects are driven by pictorial cues and their implied actions, even in the absence of volumetric cues that reflect the tangibility and affordances of the prime.

  15. Prime and prejudice: co-occurrence in the culture as a source of automatic stereotype priming.

    PubMed

    Verhaeghen, Paul; Aikman, Shelley N; Van Gulick, Ana E

    2011-09-01

    It has been argued that stereotype priming (response times are faster for stereotypical word pairs, such as black-poor, than for non-stereotypical word pairs, such as black-balmy) is partially a function of biases in the belief system inherent in the culture. In three priming experiments, we provide direct evidence for this position, showing that stereotype priming effects associated with race, gender, and age can be very well explained through objectively measured associative co-occurrence of prime and target in the culture: (a) once objective associative strength between word pairs is taken into account, stereotype priming effects disappear; (b) the relationship between response time and associative strength is identical for social primes and non-social primes. The correlation between associative-value-controlled stereotype priming and self-report measures of racism, sexism, and ageism is near zero. The racist/sexist/ageist in all of us appears to be (at least partially) a reflection of the surrounding culture.

  16. Early Morphological Decomposition of Suffixed Words: Masked Priming Evidence with Transposed-Letter Nonword Primes

    ERIC Educational Resources Information Center

    Beyersmann, Elisabeth; Dunabeitia, Jon Andoni; Carreiras, Manuel; Coltheart, Max; Castles, Anne

    2013-01-01

    Many studies have previously reported that the recognition of a stem target (e.g., "teach") is facilitated by the prior masked presentation of a prime consisting of a derived form of it (e.g., "teacher"). We conducted two lexical decision experiments to investigate masked morphological priming in Spanish. Experiment 1 showed…

  17. An ERP investigation of masked cross-script translation priming.

    PubMed

    Hoshino, Noriko; Midgley, Katherine J; Holcomb, Phillip J; Grainger, Jonathan

    2010-07-16

    The time course of cross-script translation priming and repetition priming was examined in two different scripts using a combination of the masked priming paradigm with the recording of event-related potentials (ERPs). Japanese-English bilinguals performed a semantic categorization task in their second language (L2) English and in their first language (L1) Japanese. Targets were preceded by a visually presented related (translation equivalent/repeated) or unrelated prime. The results showed that the amplitudes of the N250 and N400 ERP components were significantly modulated for L2-L2 repetition priming, L1-L2 translation priming, and L1-L1 repetition priming, but not for L2-L1 translation priming. There was also evidence for priming effects in an earlier 100-200 ms time window for L1-L1 repetition priming and L1-L2 translation priming. We argue that a change in script across primes and targets provides optimal conditions for prime word processing, hence generating very fast-acting translation priming effects when primes are in L1.

  18. Prime time advertisements: repetition priming from faces seen on subject recruitment posters.

    PubMed

    Bruce, V; Carson, D; Burton, A M; Kelly, S

    1998-05-01

    Repetition priming is defined as a gain in item recognition after previous exposure. Repetition priming of face recognition has been shown to last for several months, despite contamination by everyday exposure to both experimental and control faces in the interval. Here we show that gains in face recognition in the laboratory are found from faces initially seen in a rather different context--on subject recruitment posters, even when the advertisements make no specific mention of experiments involving face recognition. The priming was greatest when identical pictures were shown in the posters and in the test phase, although different views of faces did give significant priming in one study. Follow-up studies revealed poor explicit memory for the faces shown on the posters. The results of these experiments are used to develop a model in which repetition priming reflects the process of updating representations of familiar faces. PMID:9610121

  19. A computational approach to negative priming

    NASA Astrophysics Data System (ADS)

    Schrobsdorff, H.; Ihrke, M.; Kabisch, B.; Behrendt, J.; Hasselhorn, M.; Herrmann, J. Michael

    2007-09-01

    Priming is characterized by a sensitivity of reaction times to the sequence of stimuli in psychophysical experiments. The reduction of the reaction time observed in positive priming is well-known and experimentally understood (Scarborough et al., J. Exp. Psycholol: Hum. Percept. Perform., 3, pp. 1-17, 1977). Negative priming—the opposite effect—is experimentally less tangible (Fox, Psychonom. Bull. Rev., 2, pp. 145-173, 1995). The dependence on subtle parameter changes (such as response-stimulus interval) usually varies. The sensitivity of the negative priming effect bears great potential for applications in research in fields such as memory, selective attention, and ageing effects. We develop and analyse a computational realization, CISAM, of a recent psychological model for action decision making, the ISAM (Kabisch, PhD thesis, Friedrich-Schiller-Universitat, 2003), which is sensitive to priming conditions. With the dynamical systems approach of the CISAM, we show that a single adaptive threshold mechanism is sufficient to explain both positive and negative priming effects. This is achieved by comparing results obtained by the computational modelling with experimental data from our laboratory. The implementation provides a rich base from which testable predictions can be derived, e.g. with respect to hitherto untested stimulus combinations (e.g. single-object trials).

  20. Avoid self-priming centrifugal pump

    SciTech Connect

    Reeves, G.G.

    1987-01-01

    The self-priming horizontal centrifugal pump becomes known to its operator either as a good pump or a bad pump. The latter is usually replaced by another type of pump, even though a properly specified self-priming centrifugal pump might have been a good choice. Use of the guidelines described in this article are intended to help in the purchase and installation of a good pump. Self-priming centrifugal pumps are used for removing liquids from below grade sumps or pits that may also contain solids, fibers and/or muck. Alternate pumps for this service include submersible pumps, vertical turbine pumps and positive displacement pumps. These alternate pumps do not pass solid particles as large as self-priming pumps do without damage. Positive displacement pumps are not normally cost-effective when pumping liquid at rates in excess of 500 gallons per minute in low-head applications. Vertical and submersible pumps must be removed when cleaning of the pump is required. Self-priming pumps are easily cleaned by opening the access plates without moving the pump; and they cost less than the other types.

  1. Priming Intelligent Behavior: An Elusive Phenomenon

    PubMed Central

    Shanks, David R.; Newell, Ben R.; Lee, Eun Hee; Balakrishnan, Divya; Ekelund, Lisa; Cenac, Zarus; Kavvadia, Fragkiski; Moore, Christopher

    2013-01-01

    Can behavior be unconsciously primed via the activation of attitudes, stereotypes, or other concepts? A number of studies have suggested that such priming effects can occur, and a prominent illustration is the claim that individuals' accuracy in answering general knowledge questions can be influenced by activating intelligence-related concepts such as professor or soccer hooligan. In 9 experiments with 475 participants we employed the procedures used in these studies, as well as a number of variants of those procedures, in an attempt to obtain this intelligence priming effect. None of the experiments obtained the effect, although financial incentives did boost performance. A Bayesian analysis reveals considerable evidential support for the null hypothesis. The results conform to the pattern typically obtained in word priming experiments in which priming is very narrow in its generalization and unconscious (subliminal) influences, if they occur at all, are extremely short-lived. We encourage others to explore the circumstances in which this phenomenon might be obtained. PMID:23637732

  2. The influence of Fe doping on the surface topography of GaN epitaxial material

    NASA Astrophysics Data System (ADS)

    Lei, Cui; Haibo, Yin; Lijuan, Jiang; Quan, Wang; Chun, Feng; Hongling, Xiao; Cuimei, Wang; Jiamin, Gong; Bo, Zhang; Baiquan, Li; Xiaoliang, Wang; Zhanguo, Wang

    2015-10-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 1019 cm-3. High resistivity GaN epitaxial material which is 1 × 109 Ω·cm is achieved. Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No. YYY-0701-02), the National Natural Science Foundation of China (Nos. 61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project.

  3. Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

    NASA Astrophysics Data System (ADS)

    Hou, Yang; Zhu, Lin-Li

    2016-08-01

    Gallium nitride (GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation (BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of GaN nanostructures in nanoelectronic devices through surface engineering. Project supported by the National Natural Science Foundation of China (Grant Nos. 11302189 and 11321202) and the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175).

  4. Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

    NASA Astrophysics Data System (ADS)

    Hou, Yang; Zhu, Lin-Li

    2016-08-01

    Gallium nitride (GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation (BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of GaN nanostructures in nanoelectronic devices through surface engineering. Project supported by the National Natural Science Foundation of China (Grant Nos. 11302189 and 11321202) and the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175).

  5. One-step graphene coating of heteroepitaxial GaN films.

    PubMed

    Choi, Jae-Kyung; Huh, Jae-Hoon; Kim, Sung-Dae; Moon, Daeyoung; Yoon, Duhee; Joo, Kisu; Kwak, Jinsung; Chu, Jae Hwan; Kim, Sung Youb; Park, Kibog; Kim, Young-Woon; Yoon, Euijoon; Cheong, Hyeonsik; Kwon, Soon-Yong

    2012-11-01

    Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ~0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.

  6. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

    PubMed Central

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining. PMID:23270331

  7. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

    PubMed

    Zhong, Aihua; Hane, Kazuhiro

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining. PMID:23270331

  8. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  9. Priming for novel object associations: Neural differences from object item priming and equivalent forms of recognition.

    PubMed

    Gomes, Carlos Alexandre; Figueiredo, Patrícia; Mayes, Andrew

    2016-04-01

    The neural substrates of associative and item priming and recognition were investigated in a functional magnetic resonance imaging study over two separate sessions. In the priming session, participants decided which object of a pair was bigger during both study and test phases. In the recognition session, participants saw different object pairs and performed the same size-judgement task followed by an associative recognition memory task. Associative priming was accompanied by reduced activity in the right middle occipital gyrus as well as in bilateral hippocampus. Object item priming was accompanied by reduced activity in extensive priming-related areas in the bilateral occipitotemporofrontal cortex, as well as in the perirhinal cortex, but not in the hippocampus. Associative recognition was characterized by activity increases in regions linked to recollection, such as the hippocampus, posterior cingulate cortex, anterior medial frontal gyrus and posterior parahippocampal cortex. Item object priming and recognition recruited broadly overlapping regions (e.g., bilateral middle occipital and prefrontal cortices, left fusiform gyrus), even though the BOLD response was in opposite directions. These regions along with the precuneus, where both item priming and recognition were accompanied by activation, have been found to respond to object familiarity. The minimal structural overlap between object associative priming and recollection-based associative recognition suggests that they depend on largely different stimulus-related information and that the different directions of the effects indicate distinct retrieval mechanisms. In contrast, item priming and familiarity-based recognition seemed mainly based on common memory information, although the extent of common processing between priming and familiarity remains unclear. Further implications of these findings are discussed. PMID:26418396

  10. Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

    NASA Astrophysics Data System (ADS)

    Chunjiang, Ren; Shichang, Zhong; Yuchao, Li; Zhonghui, Li; Yuechan, Kong; Tangsheng, Chen

    2016-08-01

    Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is presented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEMT. The AlGaN/GaN hetero-structure deposited on 3 inch SiC substrate exhibited a 2DEG hall mobility and density of ˜2100 cm2/(V·s) and 1.0 × 1013 cm-2, respectively, at room temperature. Dual field plates were introduced to the designed 0.25 μm GaN HEMT and the source connected field plate was optimized for minimizing the peak field plate near the drain side of the gate, while maintaining excellent power gain performance for Ku-band application. The load-pull measurement at 14 GHz showed a power density of 5.2 W/mm for the fabricated 400 μm gate periphery GaN HEMT operated at a drain bias of 28 V. A Ku-band internally matched GaN power transistor was developed with two 10.8 mm gate periphery GaN HEMT chips combined. The GaN power transistor exhibited an output power of 102 W at 13.3 GHz and 32 V operating voltage under pulsed operation mode with a pulse width of 100 μs and duty cycle of 10%. The associated power gain and power added efficiency were 9.2 dB and 48%, respectively. To the best of the authors' knowledge, the PAE is the highest for Ku-band GaN power transistor with over 100 W output power.

  11. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  12. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  13. Size dictated thermal conductivity of GaN

    NASA Astrophysics Data System (ADS)

    Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A. Alec; Rost, Christina M.; Maria, Jon-Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-09-01

    The thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 μm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (1015-1018 cm-3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

  14. DX-like behavior of oxygen in GaN

    SciTech Connect

    Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu; Ager III, Joel W.; Grzegory, Izabella; Meyer, Bruno K.

    2001-02-01

    The role of oxygen as a shallow donor and a DX-state in GaN is elucidated by recent Raman experiments under hydrostatic pressure and the findings of first principles OK calculations. A pressure induced transfer of electrons from a shallow donor state to a deep DX-like state of the same donor can be correlated with vibrational gap modes by monitoring the freeze-out dynamics. Both features are unique to oxygen doped GaN and cannot be observed in Si-doped material. The gap modes can be well explained by a linear chain model of impurity vibrations of substitutional O on the N site. A mode variation, and switching steps in its pressure behavior, which occurs in parallel to the carrier freeze-out are proposed to reflect three different charge states of the strongly localized states of O. This DX-type behavior as well as the experimental threshold pressure values are in excellent agreement with the theory results.

  15. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    SciTech Connect

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D'Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  16. Properties of GaN grown on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Crouch, R. K.; Debnam, W. J.; Fripp, A. L.

    1978-01-01

    Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

  17. Si Donor Incorporation in GaN Nanowires.

    PubMed

    Fang, Zhihua; Robin, Eric; Rozas-Jiménez, Elena; Cros, Ana; Donatini, Fabrice; Mollard, Nicolas; Pernot, Julien; Daudin, Bruno

    2015-10-14

    With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs. PMID:26426262

  18. Magneto-ballistic transport in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Santoruvo, Giovanni; Allain, Adrien; Ovchinnikov, Dmitry; Matioli, Elison

    2016-09-01

    The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ˜25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.

  19. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

    SciTech Connect

    Kushvaha, S. S.; Kumar, M. Senthil; Maurya, K. K.; Dalai, M. K.; Sharma, Nita D.

    2013-09-15

    Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  20. Semantic and subword priming during binocular suppression.

    PubMed

    Costello, Patricia; Jiang, Yi; Baartman, Brandon; McGlennen, Kristine; He, Sheng

    2009-06-01

    In general, stimuli that are familiar and recognizable have an advantage of predominance during binocular rivalry. Recent research has demonstrated that familiar and recognizable stimuli such as upright faces and words in a native language could break interocular suppression faster than their matched controls. In this study, a visible word prime was presented binocularly then replaced by a high-contrast dynamic noise pattern presented to one eye and either a semantically related or unrelated word was introduced to the other eye. We measured how long it took for target words to break from suppression. To investigate word-parts priming, a second experiment also included word pairs that had overlapping subword fragments. Results from both experiments consistently show that semantically related words and words that shared subword fragments were faster to gain dominance compared to unrelated words, suggesting that words, even when interocularly suppressed and invisible, can benefit from semantic and subword priming.

  1. Characterization of bulk grown GaN and AlN single crystal materials

    NASA Astrophysics Data System (ADS)

    Raghothamachar, Balaji; Bai, Jie; Dudley, Michael; Dalmau, Rafael; Zhuang, Dejin; Herro, Ziad; Schlesser, Raoul; Sitar, Zlatko; Wang, Buguo; Callahan, Michael; Rakes, Kelly; Konkapaka, Phanikumar; Spencer, Michael

    2006-01-01

    Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.

  2. Characterization of Bulk Grown GaN and AlN Single Crystal Materials

    SciTech Connect

    Raghothamachar,B.; Bai, J.; Dudley, M.; Dalmau, R.; Zhuang, D.; Herro, Z.; Schlesser, R.; Sitar, Z.; Wang, B.; Callahan, M.

    2006-01-01

    Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.

  3. Density Functional Theory for Green Chemical Catalyst Supported on S-Terminated GaN(0001)

    NASA Astrophysics Data System (ADS)

    Yokoyama, Mami; Tsukamoto, Shiro; Ishii, Akira

    2011-12-01

    A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on S-terminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S on the case of GaN substrate is to make the number of the valence electron to be close to 0, it happened same way for GaAs substrate.

  4. Prime factorization using magnonic holographic devices

    NASA Astrophysics Data System (ADS)

    Khivintsev, Yuri; Ranjbar, Mojtaba; Gutierrez, David; Chiang, Howard; Kozhevnikov, Alexander; Filimonov, Yuri; Khitun, Alexander

    2016-09-01

    Determining the prime factors of a given number N is a problem that requires super-polynomial time for conventional digital computers. A polynomial-time algorithm was invented by Shor for quantum computers. In this paper, we present experimental data that demonstrate prime factorization using spin-wave interference but without quantum entanglement. Prime factorization includes three major steps. First, a general-type computer calculates the sequence of numbers mkmod(N), where N is the number to be factorized, m is a randomly chosen positive integer, and k = 1, 2, 3, 4, 5, 6…. Next, the period of the calculated sequence r is determined by exploiting spin-wave interference. Finally, the general-type computer determines the primes based on the obtained r. The experiment for period finding was conducted on a six-terminal Y3Fe2(FeO4)3 device. We chose number 15 for testing and determined its primes using a sequence of measurements. The obtained experimental data for a micrometer-sized prototype aimed to demonstrate the benefits of using spin-wave devices to solve complex computational problems. Scalability is one of the major strengths inherent in this type of wave-based device, which may provide a route to nanometer-sized logic circuits. We discuss the physical and technological limitations of this approach, which define the maximum size of N and the computational speed. Although this classical approach cannot compete with the quantum algorithm in terms of efficiency, magnonic holographic devices can potentially be used as complementary logic units aimed at speeding up prime factorization for classical computers.

  5. The role of short-term memory in semantic priming.

    PubMed

    Beer, A L; Diehl, V A

    2001-07-01

    Two theories of priming were compared: spreading activation theories, in particular ACT, and compound-cue theories. Whereas ACT assumes that priming is a result of diffusing activation in long-term memory, compound-cue models suggest that priming results from a formation process of prime and target in short-term memory. Thirty-eight participants took part in a study that combined a digit span task with a double lexical decision task consisting of a prime and a target item. Digit span length (low, medium, and high) and prime type (related or unrelated word or nonword) were both within-subject variables. As expected, results showed significant priming effects. In favor of ACT, no interaction between digit span length and prime type was found. Additionally, a nonword inhibition effect (unrelated versus nonword prime) was found, which was predicted by compound-cue theories. This finding is discussed in terms of the process interference and response competition hypotheses.

  6. Schoolbook Texts: Behavioral Achievement Priming in Math and Language

    PubMed Central

    Engeser, Stefan; Baumann, Nicola; Baum, Ingrid

    2016-01-01

    Prior research found reliable and considerably strong effects of semantic achievement primes on subsequent performance. In order to simulate a more natural priming condition to better understand the practical relevance of semantic achievement priming effects, running texts of schoolbook excerpts with and without achievement primes were used as priming stimuli. Additionally, we manipulated the achievement context; some subjects received no feedback about their achievement and others received feedback according to a social or individual reference norm. As expected, we found a reliable (albeit small) positive behavioral priming effect of semantic achievement primes on achievement in math (Experiment 1) and language tasks (Experiment 2). Feedback moderated the behavioral priming effect less consistently than we expected. The implication that achievement primes in schoolbooks can foster performance is discussed along with general theoretical implications. PMID:26938446

  7. Schoolbook Texts: Behavioral Achievement Priming in Math and Language.

    PubMed

    Engeser, Stefan; Baumann, Nicola; Baum, Ingrid

    2016-01-01

    Prior research found reliable and considerably strong effects of semantic achievement primes on subsequent performance. In order to simulate a more natural priming condition to better understand the practical relevance of semantic achievement priming effects, running texts of schoolbook excerpts with and without achievement primes were used as priming stimuli. Additionally, we manipulated the achievement context; some subjects received no feedback about their achievement and others received feedback according to a social or individual reference norm. As expected, we found a reliable (albeit small) positive behavioral priming effect of semantic achievement primes on achievement in math (Experiment 1) and language tasks (Experiment 2). Feedback moderated the behavioral priming effect less consistently than we expected. The implication that achievement primes in schoolbooks can foster performance is discussed along with general theoretical implications.

  8. Does achievement motivation mediate the semantic achievement priming effect?

    PubMed

    Engeser, Stefan; Baumann, Nicola

    2014-10-01

    The aim of our research was to understand the processes of the prime-to-behavior effects with semantic achievement primes. We extended existing models with a perspective from achievement motivation theory and additionally used achievement primes embedded in the running text of excerpts of school textbooks to simulate a more natural priming condition. Specifically, we proposed that achievement primes affect implicit achievement motivation and conducted pilot experiments and 3 main experiments to explore this proposition. We found no reliable positive effect of achievement primes on implicit achievement motivation. In light of these findings, we tested whether explicit (instead of implicit) achievement motivation is affected by achievement primes and found this to be the case. In the final experiment, we found support for the assumption that higher explicit achievement motivation implies that achievement priming affects the outcome expectations. The implications of the results are discussed, and we conclude that primes affect achievement behavior by heightening explicit achievement motivation and outcome expectancies. PMID:24820250

  9. Affective priming using facial expressions modulates liking for abstract art.

    PubMed

    Flexas, Albert; Rosselló, Jaume; Christensen, Julia F; Nadal, Marcos; Olivera La Rosa, Antonio; Munar, Enric

    2013-01-01

    We examined the influence of affective priming on the appreciation of abstract artworks using an evaluative priming task. Facial primes (showing happiness, disgust or no emotion) were presented under brief (Stimulus Onset Asynchrony, SOA = 20 ms) and extended (SOA = 300 ms) conditions. Differences in aesthetic liking for abstract paintings depending on the emotion expressed in the preceding primes provided a measure of the priming effect. The results showed that, for the extended SOA, artworks were liked more when preceded by happiness primes and less when preceded by disgust primes. Facial expressions of happiness, though not of disgust, exerted similar effects in the brief SOA condition. Subjective measures and a forced-choice task revealed no evidence of prime awareness in the suboptimal condition. Our results are congruent with findings showing that the affective transfer elicited by priming biases evaluative judgments, extending previous research to the domain of aesthetic appreciation.

  10. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

    NASA Astrophysics Data System (ADS)

    Kim, Y. H.; Ruh, H.; Noh, Y. K.; Kim, M. D.; Oh, J. E.

    2010-03-01

    The microstructural properties of a GaN layer grown on a patterned sapphire substrate (PSS) were studied in detail using transmission electron microscope techniques to determine dislocation and growth behaviors. Regular and uniform recrystallized GaN islands were observed on the protruding pattern. On a flat sapphire surface, the crystallographic orientation relationship of ⟨1¯21¯0⟩GaN on FS//⟨11¯00⟩sapphire and {11¯01}GaN on FS//{12¯13}sapphire existed between the GaN and the substrate. On the other hand, the orientation relationship of ⟨1¯21¯0⟩GaN layer//⟨1¯21¯0⟩GaN island on IS//⟨11¯00⟩sapphire and {11¯01}GaN layer//{0002}GaN island on IS//{12¯13}sapphire was confirmed among the GaN layer, the recrystallized GaN islands on an inclined sapphire surface and the PSS. The flat surface among the protruding patterns began to fill rapidly with GaN. Then, the GaN gradually overgrew the protruding pattern and coalesced near the summit as the growth time increased. The generation of threading dislocations was observed in the vicinity of the coalescence points near the top of the protruding patterns.

  11. Influence of prime lexicality, frequency, and pronounceability on the masked onset priming effect.

    PubMed

    Dimitropoulou, Maria; Duñabeitia, Jon Andoni; Carreiras, Manuel

    2010-09-01

    The present study investigates the origins of the masked onset priming effect (MOPE). There are two alternative interpretations that account for most of the evidence reported on the MOPE, so far. The speech planning account (SP) identifies the locus of the MOPE in the preparation of the speech response. In contrast, the dual-route theory proposes that the effect arises as a result of the processing of the prime by the nonlexical route. In a series of masked onset priming word naming experiments we test the validity of these accounts by manipulating the primes' frequency, their lexical status, and pronounceability. We found consistent MOPEs of similar magnitude with high- and low-frequency prime words as well as with pronounceable nonwords. Contrarily, when primes consisted of unpronounceable consonantal strings the effect disappeared, suggesting that pronounceability of the prime is a prerequisite for the emergence of the MOPE. These results are in accordance with the predictions of the SP account. The pattern of effects obtained in the present study further defines the origins of the MOPE. PMID:20221948

  12. Retro-priming, priming, and double testing: psi and replication in a test–retest design

    PubMed Central

    Rabeyron, Thomas

    2014-01-01

    Numerous experiments have been conducted in recent years on anomalous retroactive influences on cognition and affect (Bem, 2010), yet more data are needed to understand these processes precisely. For this purpose, we carried out an initial retro-priming study in which the response times of 162 participants were measured (Rabeyron and Watt, 2010). In the current paper, we present the results of a second study in which we selected those participants who demonstrated the strongest retro-priming effect during the first study, in order to see if we could replicate this effect and therefore select high scoring participants. An additional objective was to try to find correlations between psychological characteristics (anomalous experiences, mental health, mental boundaries, trauma, negative life events) and retro-priming results for the high scoring participants. The retro-priming effect was also compared with performance on a classical priming task. Twenty-eight participants returned to the laboratory for this new study. The results, for the whole group, on the retro-priming task, were negative and non-significant (es = −0.25, ns) and the results were significant on the priming task (es = 0.63, p < 0.1). We obtained overall negative effects on retro-priming results for all the sub-groups (students, male, female). Ten participants were found to have positive results on the two retro-priming studies, but no specific psychological variables were found for these participants compared to the others. Several hypotheses are considered in explaining these results, and the author provide some final thoughts concerning psi and replicability. PMID:24672466

  13. X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

    NASA Astrophysics Data System (ADS)

    King, S. W.; Carlson, E. P.; Therrien, R. J.; Christman, J. A.; Nemanich, R. J.; Davis, R. F.

    1999-11-01

    The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650-750 °C) occurs via a Stranski-Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at ≈10-15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750-900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism.

  14. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    PubMed

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  15. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    PubMed Central

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-01-01

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

  16. Complete Genome Sequence of Salmonella enterica Serovar Typhimurium Strain YU15 (Sequence Type 19) Harboring the Salmonella Genomic Island 1 and Virulence Plasmid pSTV

    PubMed Central

    Calva, Edmundo; Puente, José L.; Zaidi, Mussaret B.

    2016-01-01

    The complete genome of Salmonella enterica subsp. enterica serovar Typhimurium sequence type 19 (ST19) strain YU15, isolated in Yucatán, Mexico, from a human baby stool culture, was determined using PacBio technology. The chromosome contains five intact prophages and the Salmonella genomic island 1 (SGI1). This strain carries the Salmonella virulence plasmid pSTV. PMID:27081132

  17. Use of pyloroplasty (Y-U) to treat presumed delayed gastric emptying in a cheetah (Acinonyx jubatus).

    PubMed

    Neiffer, D L; Pardo, A D; Klein, E C

    2000-12-01

    A 4-yr-old cheetah (Acinonyx jubatus) with a 2-yr history of chronic intermittent vomiting and spiral bacteria-associated gastritis presented with dramatically increased vomiting frequency and marked intermittent abdominal distention. Physical examination revealed loss of muscle mass and poor fur coat quality. Contrast radiography was consistent with delayed gastric emptying due to presumed gastric outlet obstruction. Both Y-U pyloroplasty and incisional gastropexy were performed, and no subsequent vomiting has been observed for 3 yr with the exception of three episodes during the immediate postoperative period. The cause of delayed gastric emptying was not determined, although a gastric motility disorder associated with gastric bacterial infection and elevated gastrin levels was suspected.

  18. Contrasts of atmospheric circulation and associated tropical convection between Huaihe River valley and Yangtze River valley mei-yu flooding

    NASA Astrophysics Data System (ADS)

    Hong, Jieli; Liu, Yimin

    2012-07-01

    The significant differences of atmospheric circulation between flooding in the Huaihe and Yangtze River valleys during early mei-yu (i.e., the East Asian rainy season in June) and the related tropical convection were investigated. During the both flooding cases, although the geopotential height anomalies always exhibit equivalent barotropic structures in middle to high latitudes at middle and upper troposphere, the phase of the Rossby wave train is different over Eurasian continent. During flooding in the Huaihe River valley, only one single blocking anticyclone is located over Baikal Lake. In contrast, during flooding in the Yangtze River valley, there are two blocking anticyclones. One is over the Ural Mountains and the other is over Northeast Asia. In the lower troposphere a positive geopotential height anomaly is located at the western ridge of subtropical anticyclone over Western Pacific (SAWP) in both flooding cases, but the location of the height anomaly is much farther north and west during the Huaihe River mei-yu flooding. Furthermore, abnormal rainfall in the Huaihe River valley and the regions north of it in China is closely linked with the latent heating anomaly over the Arabian Sea and Indian peninsula. However, the rainfall in the Yangtze River valley and the regions to its south in China is strongly related to the convection over the western tropical Pacific. Numerical experiments demonstrated that the enhanced latent heating over the Arabian Sea and Indian peninsula causes water vapor convergence in the region south of Tibetan Plateau and in the Huaihe River valley extending to Japan Sea with enhanced precipitation; and vapor divergence over the Yangtze River valley and the regions to its south with deficient precipitation. While the weakened convection in the tropical West Pacific results in moisture converging over the Yangtze River and the region to its south, along with abundant rainfall.

  19. Consonance in Network Prime-Time Programming.

    ERIC Educational Resources Information Center

    Gerhard, Michael E.

    Television research suggests that three major television networks are following a policy of standardization and that a high degree of consonance in prime-time network programing results from constraints within the networks' organizational, economic, and ideological frameworks. A study further explored these results by examining a list of all…

  20. Bidirectional Priming Processes in the Simon Task

    ERIC Educational Resources Information Center

    Metzker, Manja; Dreisbach, Gesine

    2009-01-01

    The Simon effect is mostly explained in terms of dual-route models, which imply unidirectional activation processes from stimulus features to response features. However, there is also evidence that these preactivated response features themselves prime corresponding stimulus features. From this perspective, the Simon effect should only occur…

  1. Thematic Mathematics: The Combinatorics of Prime Factorizations

    ERIC Educational Resources Information Center

    Griffiths, Martin

    2010-01-01

    In this article, we use a particular example to illustrate a thematic approach to the teaching and learning of mathematics. Our theme, suitable for undergraduates and able sixth-form students, is the enumeration of mathematical objects associated with the prime factorizations of integers. It is shown in detail how this gives rise to some beautiful…

  2. Attentional Control and Asymmetric Associative Priming

    ERIC Educational Resources Information Center

    Hutchison, Keith A.; Heap, Shelly J.; Neely, James H.; Thomas, Matthew A.

    2014-01-01

    Participants completed a battery of 3 attentional control (AC) tasks (OSPAN, antisaccade, and Stroop, as in Hutchison, 2007) and performed a lexical decision task with symmetrically associated (e.g., "sister-brother") and asymmetrically related primes and targets presented in both the forward (e.g., "atom-bomb") and backward…

  3. Method for priming and DNA sequencing

    SciTech Connect

    Mugasimangalam, R.C.; Ulanovsky, L.E.

    1997-12-01

    A method is presented for improving the priming specificity of an oligonucleotide primer that is non-unique in a nucleic acid template which includes selecting a continuous stretch of several nucleotides in the template DNA where one of the four bases does not occur in the stretch. This also includes bringing the template DNA in contract with a non-unique primer partially or fully complimentary to the sequence immediately upstream of the selected sequence stretch. This results in polymerase-mediated differential extension of the primer in the presence of a subset of deoxyribonucleotide triphosphates that does not contain the base complementary to the base absent in the selected sequence stretch. These reactions occur at a temperature sufficiently low for allowing the extension of the non-unique primer. The method causes polymerase-mediated extension reactions in the presence of all four natural deoxyribonucleotide triphosphates or modifications. At this high temperature discrimination occurs against priming sites of the non-unique primer where the differential extension has not made the primer sufficiently stable to prime. However, the primer extended at the selected stretch is sufficiently stable to prime.

  4. Values in Prime Time Alcoholic Beverage Commercials.

    ERIC Educational Resources Information Center

    Frazer, Charles F.

    Content analysis was used to study the values evident in televised beer and wine commercials. Seventy-seven prime time commercials, 7.6% of a week's total, were analyzed along value dimensions adapted from Gallup's measure of popular social values. The intensity of each value was coded on a five-point scale. None of the commercials in the beer and…

  5. Colorimetry and prime colours--a theorem.

    PubMed

    Hornaes, Hans Petter; Wold, Jan Henrik; Farup, Ivar

    2005-08-01

    Human colour vision is the result of a complex process involving topics ranging from physics of light to perception. Whereas the diversity of light entering the eye in principle span an infinite-dimensional vector space in terms of the spectral power distributions, the space of human colour perceptions is three dimensional. One important consequence of this is that a variety of colours can be visually matched by a mixture of only three adequately chosen reference lights. It has been observed that there exists one particular set of monochromatic reference lights that, according to a certain definition, is optimal for producing colour matches. These reference lights are commonly denoted prime colours. In the present paper, we intend to rigorously show that the existence of prime colours is not particular to the human visual system as sometimes stated, but rather an algebraic consequence of the manner in which a kind of colorimetric functions called colour-matching functions are defined and transformed. The solution is based on maximisation of a determinant determining the gamut size of the colour space spanned by the prime colours. Cramer's rule for solving a set of linear equations is an essential part of the proof. By means of examples, it is shown that mathematically the optimal set of reference lights is not unique in general, and that the existence of a maximum determinant is not a necessary condition for the existence of prime colours.

  6. Self-priming dielectric elastomer generator design

    NASA Astrophysics Data System (ADS)

    McKay, Thomas; O'Brien, Benjamin; Calius, Emilio; Anderson, Iain

    2012-04-01

    Dielectric elastomer generators (DEG) are variable capacitor power generators that are a highly promising technology for harvesting energy from environmental sources because they have the ability to work over a wide frequency range without sacrificing their high energy density or efficiency. DEG can also take on a wide range of configurations, so they are customizable to the energy source. A typical generation cycle requires electrical charge to be supplied and removed from the DEG at appropriate times as it is mechanically deformed. The manner in which the DEG charge state is controlled greatly influences energy production. The recently developed self-priming circuit can provide this functionality without any active electronics, but it is not configurable to match the generator and its energy source. In this paper a highly configurable self-priming circuit is introduced and an analysis of the self-priming DEG cycle is performed to obtain design rules to optimize the rate at which it can boost its operating voltage. In a case study we compare the performance of an initial prototype selfpriming circuit with one that has been intentionally optimized. The optimized generator voltage climbed from 30 V up to 1500 V in 27 cycles, whereas the same generator required 37 cycles when the suboptimal self-priming circuit was used.

  7. Predicting the Unbeaten Path through Syntactic Priming

    ERIC Educational Resources Information Center

    Arai, Manabu; Nakamura, Chie; Mazuka, Reiko

    2015-01-01

    A number of previous studies showed that comprehenders make use of lexically based constraints such as subcategorization frequency in processing structurally ambiguous sentences. One piece of such evidence is lexically specific syntactic priming in comprehension; following the costly processing of a temporarily ambiguous sentence, comprehenders…

  8. POST Quantum Cryptography from Mutant Prime Knots

    NASA Astrophysics Data System (ADS)

    Marzuoli, Annalisa; Palumbo, Giandomenico

    By resorting to basic features of topological knot theory we propose a (classical) cryptographic protocol based on the `difficulty' of decomposing complex knots generated as connected sums of prime knots and their mutants. The scheme combines an asymmetric public key protocol with symmetric private ones and is intrinsecally secure against quantum eavesdropper attacks.

  9. Maple Explorations, Perfect Numbers, and Mersenne Primes

    ERIC Educational Resources Information Center

    Ghusayni, B.

    2005-01-01

    Some examples from different areas of mathematics are explored to give a working knowledge of the computer algebra system Maple. Perfect numbers and Mersenne primes, which have fascinated people for a very long time and continue to do so, are studied using Maple and some questions are posed that still await answers.

  10. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

    NASA Astrophysics Data System (ADS)

    Lekhal, Kaddour; Bae, Si-Young; Lee, Ho-Jun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-08-01

    The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar GaN microrods. The control of growth parameters such as H2/N2 carrier gas ratio, growth temperature, and absolute NH3/HCl gas flow resulted in changes in the growth morphology. In particular, for an optimized mixed-carrier gas ratio of H2 to N2, we achieved vertically well-aligned microrods. The topmost regions of the GaN microrods were terminated with pyramidal facets, indicating typical Ga polarity. The optical properties of the grown microrods were characterized by cathodoluminescence (CL) at a low temperature. This revealed that the GaN microrods had high crystal quality since they exhibited suppressed yellow luminescence as well as strong band edge emission.

  11. Synthesis and excellent field emission properties of three-dimensional branched GaN nanowire homostructures

    NASA Astrophysics Data System (ADS)

    Li, Enling; Sun, Lihe; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin

    2016-10-01

    Three-dimensional branched GaN nanowire homostructures have been synthesized on the Si substrate via a two-step approach by chemical vapor deposition. Structural characterization reveals that the single crystal GaN nanowire trunks have hexagonal wurtzite characteristics and grow along the [0001] direction, while the homoepitaxial single crystal branches grow in a radial direction from the six-sided surfaces of the trunks. The field emission measurements demonstrate that the branched GaN nanowire homostructures have excellent field emission properties, with low turn-on field at 2.35 V/μm, a high field enhancement factor of 2938, and long emission current stability. This indicates that the present branched GaN nanowire homostructures will become valuable for practical field emission applications.

  12. Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto

    2009-09-01

    Selective-area metalorganic vapor phase epitaxy of GaN has been investigated using the optimized growth conditions for the layer (Frank-van der Merwe) growth and GaN-template substrates with low dislocation density. The surface of a GaN hexagon with 16-µm diameter has a single wide terrace over almost the whole area (step-free surface), when there are no screw-type dislocations in the finite area. Step-free GaN hexagons grew in the two-dimensional nucleus growth mode and had approximately an eight times lower growth rate than that of a GaN film grown in the step-flow mode under the growth conditions used in this study.

  13. Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

    SciTech Connect

    Lefebvre, P.; Fernandez-Garrido, S.; Grandal, J.; Ristic, J.; Sanchez-Garcia, M.-A.; Calleja, E.

    2011-02-21

    Low-temperature photoluminescence is studied in detail in GaN nanocolumns (NCs) grown by plasma-assisted molecular beam epitaxy under various conditions (substrate temperature and impinging Ga/N flux ratio). The relative intensities of the different emission lines, in particular those related to structural defects, appear to be correlated with the growth conditions, and clearly linked to the NC sample morphology. We demonstrate, in particular, that all lines comprised between 3.10 and 3.42 eV rapidly lose intensity when the growth conditions are such that the NC coalescence is reduced. The well-known line around 3.45 eV, characteristic of GaN NC samples, shows, however, a behavior that is exactly the opposite of the other lines, namely, for growth conditions leading to reduced NC coalescence, this line tends to become more prominent, thus proving to be intrinsic to individual GaN NCs.

  14. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  15. Tuning electronic and magnetic properties of GaN nanosheets by surface modifications and nanosheet thickness.

    PubMed

    Xiao, Meixia; Yao, Tingzhen; Ao, Zhimin; Wei, Peng; Wang, Danghui; Song, Haiyang

    2015-04-14

    Density-functional theory calculations are performed to investigate the effects of surface modifications and nanosheet thickness on the electronic and magnetic properties of gallium nitride (GaN) nanosheets (NSs). Unlike the bare GaN NSs terminating with polar surfaces, the systems with hydrogenated Ga (H-GaN), fluorinated Ga (F-GaN), and chlorinated Ga (Cl-GaN) preserve their initial wurtzite structures and exhibit ferromagnetic states. The abovementioned three different decorations on Ga atoms are energetically more favorable for thicker GaN NSs. Moreover, as the thickness increases, H-GaN and F-GaN NSs undergo semiconductor to metal and half-metal to metal transition, respectively, while Cl-GaN NSs remain completely metallic. The predicted diverse and tunable electronic and magnetic properties highlight the potential of GaN NSs for novel electronic and spintronic nanodevices.

  16. Surface potential barrier in m-plane GaN studied by contactless electroreflectance

    NASA Astrophysics Data System (ADS)

    Janicki, Lukasz; Misiewicz, Jan; Cywiński, Grzegorz; Sawicka, Marta; Skierbiszewski, Czeslaw; Kudrawiec, Robert

    2016-02-01

    Contactless electroreflectance (CER) is used to study the surface potential barrier in m-plane GaN UN+ [GaN (d = 20,30,50,70 nm)/GaN:Si] structures grown by using molecular beam epitaxy. Clear bandgap-related transitions followed by Franz-Keldysh oscillations (FKO) have been observed in the CER spectra of all samples at room temperature. The built-in electric fields in the undoped cap layers have been determined from the FKO period. From the built-in electric field and the undoped GaN layer thickness, the Fermi level location at the air-exposed m-plane GaN surface has been estimated as 0.42 ± 0.05 eV below the conduction band.

  17. Electrical characterization of Schottky contacts to N-polar GaN

    NASA Astrophysics Data System (ADS)

    Downey, B. P.; Meyer, D. J.; Katzer, D. S.; Storm, D. F.; Binari, S. C.

    2013-08-01

    The Schottky barrier heights of several metals (Cu, Au, Pd, Ni, and Pt) to N-polar GaN were extracted using current-voltage and capacitance-voltage measurements. The dependence of barrier height on metal was found to vary linearly with the electronegativity of the metal as predicted by the metal-induced gap states (MIGS)-and-electronegativity model. However, the magnitude of the barrier heights are lower than those predicted by the MIGS model for GaN and lower than the experimentally measured barrier heights for Ga-polar GaN. It is likely that the polarization-induced charge at the N-polar GaN surface is responsible for the reduced barrier height.

  18. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  19. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Qi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

    2015-12-01

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to -20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ˜3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  20. Microstructure of GaN Grown on (111) Si by MOCVD

    SciTech Connect

    Fleming, J.G.; Follstaedt, D.M.; Han, J.; Provencio, P.

    1998-12-17

    Gallium nitride was grown on (111) Si by MOCVD by depositing an AIN buffer at 108O"C and then GaN at 1060 {degrees}C. The 2.2pm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were able to examine the microstructure of material between cracks with TEM. The character and arrangement of dislocation are much like those of GaN grown on Al{sub 2}O{sub 3}: -2/3 pure edge and - 1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly disoriented with respect to neighboring material. The 30 nm AIN buffer is continuous, indicating that AIN wets the Si, in contrast to GaN on Al{sub 2}O{sub 3}.

  1. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    NASA Astrophysics Data System (ADS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  2. Thermal Conductivity and Large Isotope Effect in GaN from First Principles

    SciTech Connect

    Lindsay, L.; Broido, D. A.; Reinecke, T. L.

    2012-08-28

    We present atomistic first principles results for the lattice thermal conductivity of GaN and compare them to those for GaP, GaAs, and GaSb. In GaN we find a large increase to the thermal conductivity with isotopic enrichment, ~65% at room temperature. We show that both the high thermal conductivity and its enhancement with isotopic enrichment in GaN arise from the weak coupling of heat-carrying acoustic phonons with optic phonons. This weak scattering results from stiff atomic bonds and the large Ga to N mass ratio, which give phonons high frequencies and also a pronounced energy gap between acoustic and optic phonons compared to other materials. Rigorous understanding of these features in GaN gives important insights into the interplay between intrinsic phonon-phonon scattering and isotopic scattering in a range of materials.

  3. Enhanced cell growth on nanotextured GaN surface treated by UV illumination and fibronectin adsorption.

    PubMed

    Li, Jingying; Han, Qiusen; Wang, Xinhuan; Yang, Rong; Wang, Chen

    2014-11-01

    Semiconductors are important materials used for the development of high-performance biomedical devices. Gallium nitride (GaN) is a well-known III-nitride semiconductor with excellent optoelectronic properties as well as high chemical stability and biocompatibility. The formation of tight interfaces between GaN substrates and cells would be crucial for GaN-based devices used for probing and manipulating biological processes of cells. Here we report a strategy to greatly enhance cell adhesion and survival on nanotextured GaN surface which was treated by UV illumination and fibronectin (FN) adsorption. Cell studies showed that the UV/FN treatment greatly enhanced cell adhesion and growth on nanotextured GaN surfaces. These observations suggest new opportunities for novel nanotextured GaN-based biomedical devices.

  4. High-resistance GaN epilayers with low dislocation density via growth mode modification

    NASA Astrophysics Data System (ADS)

    Xu, Z. Y.; Xu, F. J.; Wang, J. M.; Lu, L.; Yang, Z. J.; Wang, X. Q.; Shen, B.

    2016-09-01

    High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 1016 Ω/sq has been achieved at room temperature by diminishing the oxygen impurity level close to the substrate with an AlN blocking layer. Attributed to this method which offers more freedom to tailor the growth mode, a three-dimensional (3D) growth process is introduced by adjusting the growth pressure and temperature at the initial stage of the GaN epitaxy to improve the crystalline quality. The large 3D GaN grains formed during this period roughen the surface, and the following coalescence of the GaN grains causes threading dislocations bending, which finally remarkably reduces the dislocation density.

  5. Swelling or erosion on the surface of patterned GaN damaged by heavy ion implantation

    SciTech Connect

    Gao, Yuan; Lan, Chune; Xue, Jianming; Yan, Sha; Wang, Yugang; Xu, Fujun; Shen, Bo; Zhang, Yanwen

    2010-06-08

    Wurtzite undoped GaN epilayers (0 0 0 1) was implanted with 500 keV Au+ ions at room temperature under different doses, respectively. Ion implantation was performed through photoresist masks on GaN to produce alternating strips. The experimental results showed that the step height of swelling and decomposition in implanted GaN depended on ion dose and annealing temperature, i.e., damage level and its evolution. This damage evolution is contributed to implantation-induced defect production, and defect migration/accumulation occurred at different levels of displacement per atom. The results suggest that the swelling is due to the formation of porous structures in the amorphous region of implanted GaN. The decomposition of implanted area can be attributed to the disorder saturation and the diffusion of surface amorphous layer.

  6. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods

    SciTech Connect

    Lin, Y. T.; Wadekar, P. V.; Kao, H. S.; Chen, T. H.; Chen, Q. Y.; Tu, L. W.; Huang, H. C.; Ho, N. J.

    2014-02-10

    One-dimensional nitride based diluted magnetic semiconductors were grown by plasma-assisted molecular beam epitaxy. Delta-doping technique was adopted to dope GaN nanorods with Mn. The structural and magnetic properties were investigated. The GaMnN nanorods with a single crystalline structure and with Ga sites substituted by Mn atoms were verified by high-resolution x-ray diffraction and Raman scattering, respectively. Secondary phases were not observed by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. In addition, the magnetic hysteresis curves show that the Mn delta-doped GaN nanorods are ferromagnetic above room temperature. The magnetization with magnetic field perpendicular to GaN c-axis saturates easier than the one with field parallel to GaN c-axis.

  7. Priming effects on the perceived grouping of ambiguous dot patterns.

    PubMed

    Kurylo, Daniel D; Bukhari, Farhan

    2015-09-01

    For ambiguous stimuli, complex dynamics guide processes of perceptual grouping. Previous studies have suggested two opposing effects on grouping that are produced by the preliminary stimulus state: one that enhances grouping towards the existing structure, and another that opposes this structure. To examine effects of the preliminary state on grouping directly, measurements were made of perceived grouping of dot patterns that followed a visual prime. Three stimuli were presented in sequence: prime, target, and mask. Targets were composed of an evenly spaced dot grid in which grouping was established by similarity in luminance. Subjects indicated the dominant perceived grouping. The prime either corresponded to or opposed the prevailing organization of the target. Contrary to the hypothesis, solid-line primes biased grouping away from the structure of the prime, even when the prevailing organization of dot patterns strongly favored the primes' structure. This effect occurred, although to a lesser extent, when primes did not occupy the same location of targets, but were presented in a marginal area surrounding the grid. Priming effects did not occur for primes constructed of dot patterns. Effects found here may be attributed to a forward masking effect by primes, which more effectively disrupts grouping of patterns matched to the prime. Effects may also be attributed to a type of pattern contrast, in which a grouped pattern dissimilar to primes gains salience. For the pattern contrast model, the partial activation of multiple grouped configurations is compared to the pattern of the solid-line primes. PMID:25281427

  8. Priming effects on the perceived grouping of ambiguous dot patterns.

    PubMed

    Kurylo, Daniel D; Bukhari, Farhan

    2015-09-01

    For ambiguous stimuli, complex dynamics guide processes of perceptual grouping. Previous studies have suggested two opposing effects on grouping that are produced by the preliminary stimulus state: one that enhances grouping towards the existing structure, and another that opposes this structure. To examine effects of the preliminary state on grouping directly, measurements were made of perceived grouping of dot patterns that followed a visual prime. Three stimuli were presented in sequence: prime, target, and mask. Targets were composed of an evenly spaced dot grid in which grouping was established by similarity in luminance. Subjects indicated the dominant perceived grouping. The prime either corresponded to or opposed the prevailing organization of the target. Contrary to the hypothesis, solid-line primes biased grouping away from the structure of the prime, even when the prevailing organization of dot patterns strongly favored the primes' structure. This effect occurred, although to a lesser extent, when primes did not occupy the same location of targets, but were presented in a marginal area surrounding the grid. Priming effects did not occur for primes constructed of dot patterns. Effects found here may be attributed to a forward masking effect by primes, which more effectively disrupts grouping of patterns matched to the prime. Effects may also be attributed to a type of pattern contrast, in which a grouped pattern dissimilar to primes gains salience. For the pattern contrast model, the partial activation of multiple grouped configurations is compared to the pattern of the solid-line primes.

  9. The effect of retinal illuminance on visual motion priming.

    PubMed

    Takeuchi, Tatsuto; Tuladhar, Anup; Yoshimoto, Sanae

    2011-05-25

    The perceived direction of a directionally ambiguous stimulus is influenced by the moving direction of a preceding priming stimulus. Previous studies have shown that a brief priming stimulus induces positive motion priming, in which a subsequent directionally ambiguous stimulus is perceived to move in the same direction as the primer, while a longer priming stimulus induces negative priming, in which the following ambiguous stimulus is perceived to move in the opposite direction of the primer. The purpose of this study was to elucidate the underlying mechanism of motion priming by examining how retinal illuminance and velocity of the primer influences the perception of priming. Subjects judged the perceived direction of 180-deg phase-shifted (thus directionally ambiguous) sine-wave gratings displayed immediately after the offset of a primer stimulus. We found that perception of motion priming was greatly modulated by the retinal illuminance and velocity of the primer. Under low retinal illuminance, positive priming nearly disappeared even when the effective luminance contrast was equated between different conditions. Positive priming was prominent when the velocity of the primer was low, while only negative priming was observed when the velocity was high. These results suggest that the positive motion priming is induced by a higher-order mechanism that tracks prominent features of the visual stimulus, while a directionally selective motion mechanism induces negative motion priming.

  10. Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature

    NASA Astrophysics Data System (ADS)

    Huang, Yin-Chieh; Chern, Gia-Wei; Lin, Kung-Hsuan; Liang, Jian-Chin; Sun, Chi-Kuang; Hsu, Chia-Chen; Keller, Stacia; DenBaars, Steven P.

    2002-07-01

    Femtosecond transient transmission pump-probe technique was used to investigate exciton dynamics in a nominally undoped GaN thin film at room temperature. An exciton ionization time of 100-250 femtoseconds was observed by the time-resolved pump-probe measurement. A comparison experiment with pre-excited free carriers also confirmed the observation of the exciton ionization process in bulk GaN.

  11. Mass transport, faceting and behavior of dislocations in GaN

    SciTech Connect

    Nitta, S.; Kashima, T.; Kariya, M.; Yukawa, Y.; Yamaguchi, S.; Amano, H.; Akasaki, I.

    2000-07-01

    The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

  12. Strain dependent electron spin dynamics in bulk cubic GaN

    SciTech Connect

    Schaefer, A.; Buß, J. H.; Hägele, D.; Rudolph, J.; Schupp, T.; Zado, A.; As, D. J.

    2015-03-07

    The electron spin dynamics under variable uniaxial strain is investigated in bulk cubic GaN by time-resolved magneto-optical Kerr-rotation spectroscopy. Spin relaxation is found to be approximately independent of the applied strain, in complete agreement with estimates for Dyakonov-Perel spin relaxation. Our findings clearly exclude strain-induced relaxation as an effective mechanism for spin relaxation in cubic GaN.

  13. High efficiency DC-DC converter using GaN transistors

    NASA Astrophysics Data System (ADS)

    Tómaş, Cosmin-Andrei; Grecu, Cristian; Pantazicǎ, Mihaela; Marghescu, Ion

    2015-02-01

    The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.

  14. The dispersion of BED ° in unintentional doped GaN crystals

    NASA Astrophysics Data System (ADS)

    Qingcheng, Bao; Fungleng, Zhang; Ke, Shi; Rensong, Dai; Xurong, Xu

    1986-09-01

    The polarization and the wavelength of the photoluminescence of BED ° in not intentionaly doped GaN crystal wafers are observed to be dependent on the excitation intensity (I-exc). When I-exc increases from 1 KW/CM 2 to 1000 KW/CM 2, they vary at first quadratically, and then, appear saturated. This phenomenon is resulted from dispersion effect of BED ° in GaN crystal wafers, which is proposed earlier (1).

  15. GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Hunter, J.; Tsong, I.

    1998-10-14

    The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

  16. Strain dependent electron spin dynamics in bulk cubic GaN

    NASA Astrophysics Data System (ADS)

    Schaefer, A.; Buß, J. H.; Schupp, T.; Zado, A.; As, D. J.; Hägele, D.; Rudolph, J.

    2015-03-01

    The electron spin dynamics under variable uniaxial strain is investigated in bulk cubic GaN by time-resolved magneto-optical Kerr-rotation spectroscopy. Spin relaxation is found to be approximately independent of the applied strain, in complete agreement with estimates for Dyakonov-Perel spin relaxation. Our findings clearly exclude strain-induced relaxation as an effective mechanism for spin relaxation in cubic GaN.

  17. Temperature Dependence of the Piezotronic and Piezophototronic Effects in a-axis GaN Nanobelts.

    PubMed

    Wang, Xingfu; Yu, Ruomeng; Peng, Wenbo; Wu, Wenzhuo; Li, Shuti; Wang, Zhong Lin

    2015-12-22

    The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temp-eratures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.

  18. Defect Formation in GaN Epitaxial Layers due to SHI Irradiation

    SciTech Connect

    Kumar, Ashish; Kumar, V.; Singh, R.; Kanjilal, D.

    2011-07-15

    GaN epitaxial layers were irradiated with 200 MeV swift heavy Ag ions at various fluences. These samples were then characterized by XRD and TEM. Increase in peak width (FWHM) with incident ion dose showed reduction in crystallinity of epitaxial layers. Cross sectional TEM images confirmed that at highest fluence (5x10{sup 12} ions/cm{sup 2}) electronic energy loss process caused structural defect formation in GaN layer.

  19. Rhizosphere priming effects in two contrasting soils

    NASA Astrophysics Data System (ADS)

    Lloyd, Davidson; Kirk, Guy; Ritz, Karl

    2015-04-01

    Inputs of fresh plant-derived carbon may stimulate the turnover of existing soil organic matter by so-called priming effects. Priming may occur directly, as a result of nutrient 'mining' by existing microbial communities, or indirectly via population adjustments. However the mechanisms are poorly understood. We planted C4 Kikuyu grass (Pennisetum clandestinum) in pots with two contrasting C3 soils (clayey, fertile TB and sandy, acid SH), and followed the soil CO2 efflux and its δ13C. The extent of C deposition in the rhizosphere was altered by intermittently clipping the grass in half the pots; there were also unplanted controls. At intervals, pots were destructively sampled for root and shoot biomass. Total soil CO2 efflux was measured using a gas-tight PVC chamber fitted over bare soil, and connected to an infra-red gas analyser; the δ13C of efflux was measured in air sub-samples withdrawn by syringe. The extent of priming was inferred from the δ13C of efflux and the δ13C of the plant and soil end-members. In unclipped treatments, in both soils, increased total soil respiration and rhizosphere priming effects (RPE) were apparent compared to the unplanted controls. The TB soil had greater RPE overall. The total respiration in clipped TB soil was significantly greater than in the unplanted controls, but in the clipped SH soil it was not significantly different from the controls. Clipping affected plant C partitioning with greater allocation to shoot regrowth from about 4 weeks after planting. Total plant biomass decreased in the order TB unclipped > SH unclipped >TB clipped > SH clipped. The results are consistent with priming driven by microbial activation stimulated by rhizodeposits and by nitrogen demand from the growing plants under N limited conditions. Our data suggest that photosynthesis drives RPE and soil differences may alter the rate and intensity of RPE but not the direction.

  20. Priming effects on cooperative behavior in social dilemmas: considering the prime and the person.

    PubMed

    Prentice, Mike; Sheldon, Kennon M

    2015-01-01

    ABSTRACT. We test whether people with a relatively more intrinsic vs. extrinsic value orientation (RIEVO) are particularly likely to enact cooperative behavior in resource dilemmas when they are primed with relatedness goals. In Study 1, high RIEVO participants primed with relatedness exhibited more restrained fishing behavior in a resource dilemma than their unprimed counterparts or participants low in RIEVO. Study 2 replicated this effect and further showed that the prime must signal the possibility of satisfying a valued goal (relatedness satisfaction) in order to elicit the value-consistent behavior. We discuss these results in the context of recent process models of goal priming, and also discuss how these findings contribute to our understanding of cooperative behavior and the predictive power of value constructs more broadly.

  1. Comparison of Electronic and Optical Properties of GaN Monolayer and Bulk Structure: a First Principle Study

    NASA Astrophysics Data System (ADS)

    Imran, Muhammad; Hussain, Fayyaz; Rashid, Muhammad; Ullah, Hafeez; Sattar, Atif; Iqbal, Faisal; Ahmad, Ejaz

    2016-03-01

    The semiconducting two-dimensional (2D) architectures materials have potential applications in electronics and optics. The design and search of new 2D materials have attracted extensive attention recently. In this study, first principle calculation has been done on 2D gallium nitride (GaN) monolayer with respect to its formation and binding energies. The electronic and optical properties are also investigated. It is found that the single isolated GaN sheet is forming mainly ionic GaN bonds despite a slightly weaker GaN interaction as compared with its bulk counterpart. The dielectric constant value of 2D GaN is smaller as compared to 3D GaN due to less effective electronic screening effect in the layer, which is accompanied by lesser optical adsorption range and suggested to be a promising candidate in electronic and optoelectronic devices.

  2. First-principle study on electronic structure and optical properties of GaN nanowires with different cross-sections

    NASA Astrophysics Data System (ADS)

    Kong, Yike; Liu, Lei; Xia, Sihao; Wang, Honggang; Wang, Meishan

    2016-08-01

    This paper explores the properties of intrinsic gallium nitride (GaN) nanowires (NWs) in terms of formation energy, band structure, density of state (DOS) and optical properties with plane-wave ultrasoft pseudopotential method based on first-principles. Results show that after relaxation, N atoms of the outer layers move outwards, while Ga atoms move inwards, and the relaxation of surface atomic structure appears less obvious with the increasing cross-sectional area. Comparing different cross-sections of GaN NWs, it is found that the formation energy decreases and the stability goes stronger with the increasing size. With the increasing cross-section, the bandgap is decreased. Moreover, through comparative investigation in optical properties between GaN NWs and bulk GaN, a valuable phenomenom is found that the static dielectric constants of GaN NWs are notably lower, which contributes remarkably to the excellent absorbing performance of GaN NWs.

  3. Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Watanabe, Heiji; Kuroda, Naotaka; Sunakawa, Haruo; Usui, Akira

    2000-09-01

    We have used scanning reflection electron microscopy (SREM) to detect surface defects in GaN films formed by facet-initiated epitaxial lateral overgrowth. SREM revealed individual threading dislocations and single atomic steps on the GaN surface, and provided images of crystallographic tilting near the surfaces. We found that one of the two tilted GaN crystals in the overgrown areas became dominant and that the surface changed to a single domain after 50-μm-thick GaN deposition. Our SREM results also showed that the deposition of thick (over 100 μm) GaN films significantly improves the crystallographic structures of the overgrown regions, and reduces the threading dislocations in the GaN films.

  4. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

    NASA Astrophysics Data System (ADS)

    Sun, Xiaojuan; Li, Dabing; Jiang, Hong; Li, Zhiming; Song, Hang; Chen, Yiren; Miao, Guoqing

    2011-03-01

    GaN metal-semiconductor-metal (MSM) ultraviolet detectors were investigated by depositing different density of SiO2 nanoparticles (SNPs) on the GaN. It was shown that the dark current of the detectors with SNPs was more than one order of magnitude lower than that without SNPs and the peak responsivity was enhanced after deposition of the SNPs. Atomic force microscopy observations indicated that the SNPs usually formed at the termination of screw and mixed dislocations, and further current-voltage measurements showed that the leakage of the Schottky contact for the GaN MSM detector decreased with deposited the SNPs. Moreover, the leakage obeyed the Frenkel-Poole emission model, which meant that the mechanism for improving the performance is the SNPs passivation of the dislocations followed by the reduction in the dark current.

  5. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

    NASA Astrophysics Data System (ADS)

    Gupta, Priti; Rahman, A. A.; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R.; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-03-01

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

  6. Growth and characterization of horizontal GaN wires on silicon

    SciTech Connect

    Zou, Xinbo; May Lau, Kei; Lu, Xing; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma

    2014-06-30

    We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO{sub 2}. With a length-to-thickness ratio ∼200, the GaN wires are well aligned along the three equivalent 〈 112{sup ¯}0 〉 directions. Micro-Raman measurements indicate negligible stress and a low defect density inside the wires. Stacking faults were found to be the only defect type in the GaN wire by cross-sectional transmission electron microscopy. The GaN wires exhibited high conductivity, and the resistivity was 20–30 mΩ cm, regardless of the wire thickness. With proper heterostructure and doping design, these highly aligned GaN wires are promising for photonic and electronic applications monolithically integrated on silicon.

  7. Behavior of aluminum adsorption and incorporation at GaN(0001) surface: First-principles study

    SciTech Connect

    Qin, Zhenzhen; Xiong, Zhihua Wan, Qixin; Qin, Guangzhao

    2013-11-21

    First-principles calculations are performed to study the energetics and atomic structures of aluminum adsorption and incorporation at clean and Ga-bilayer GaN(0001) surfaces. We find the favorable adsorption site changes from T4 to T1 as Al coverage increased to 1 monolayer on the clean GaN(0001) surface, and a two-dimensional hexagonal structure of Al overlayer appears. It is interesting the Al atoms both prefer to concentrate in one deeper Ga layer of clean and Ga-bilayer GaN(0001) surface, respectively, while different structures could be achieved in above surfaces. For the case of clean GaN(0001) surface, corresponding to N-rich and moderately Ga-rich conditions, a highly regular superlattice structure composed of wurtzite GaN and AlN becomes favorable. For the case of Ga-bilayer GaN(0001) surface, corresponding to extremely Ga-rich conditions, the Ga bilayer is found to be sustained stable in Al incorporating process, leading to an incommensurate structure directly. Furthermore, our calculations provide an explanation for the spontaneous formation of ordered structure and incommensurate structure observed in growing AlGaN films. The calculated results are attractive for further development of growth techniques and excellent AlGaN/GaN heterostructure electronic devices.

  8. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

    PubMed

    Gupta, Priti; Rahman, A A; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-03-30

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

  9. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.

    PubMed

    Shih, Huan-Yu; Lin, Ming-Chih; Chen, Liang-Yih; Chen, Miin-Jang

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3. The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate.

  10. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

    PubMed Central

    Gupta, Priti; Rahman, A. A.; Subramanian, Shruti; Gupta, Shalini; Thamizhavel, Arumugam; Orlova, Tatyana; Rouvimov, Sergei; Vishwanath, Suresh; Protasenko, Vladimir; Laskar, Masihhur R.; Xing, Huili Grace; Jena, Debdeep; Bhattacharya, Arnab

    2016-01-01

    Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth. PMID:27025461

  11. Enhancing the field emission properties of Se-doped GaN nanowires.

    PubMed

    Li, Enling; Wu, Guishuang; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin

    2016-07-01

    Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20-120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μm(-1)) compared with the pure GaN NWs (7.0 V μm(-1)). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs. PMID:27197556

  12. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    SciTech Connect

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok; Jeon, In-Jun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong Han

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  13. GaN etching in BCl{sub 3}Cl{sub 2} plasmas

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Willison, C.G.; Zhang, L.; Han, J.; Bridges, M.M.; Pearton, S.J.; Lee, J.W.; Lester, L.F.

    1998-04-01

    GaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaCl{sub 3} and NCl etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, the authors report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl{sub 3}:Cl{sub 2} flow ratio, dc-bias, chamber-pressure, and ICP source power. GaN etch rates ranging from {approximately}100 {angstrom}/min to > 8,000 {angstrom}/min were obtained with smooth etch morphology and anisotropic profiles.

  14. Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Leung, Benjamin; Sun, Qian; Yerino, Christopher D.; Han, Jung; Coltrin, Michael E.

    2012-02-01

    For nonpolar and semipolar orientations of GaN heteroepitaxially grown on sapphire substrates, the development of growth procedures to improve surface morphology and microstructure has been driven in a largely empirical way. This work attempts to comprehensively link the intrinsic properties of GaN faceted growth, across orientations, in order to understand, design and control growth methods for nonpolar (1 1 2 0) GaN and semipolar (1 1 2 2) GaN on foreign substrates. This is done by constructing a comprehensive series of kinetic Wulff plots (or v-plots) by monitoring the advances of convex and concave facets in selective area growth. A methodology is developed to apply the experimentally determined v-plots to the interpretation and design of evolution dynamics in nucleation and island coalescence. This methodology offers a cohesive and rational model for GaN heteroepitaxy along polar, nonpolar and semipolar orientations, and is broadly extensible to the heteroepitaxy of other materials. We demonstrate furthermore that the control of morphological evolution, based on invoking a detailed knowledge of the v-plots, holds a key to the reduction of microstructural defects through effective bending of dislocations and blocking of stacking faults. The status and outlook of semipolar and nonpolar GaN growth on sapphire substrates will be presented.

  15. Size dictated thermal conductivity of GaN

    DOE PAGESBeta

    Thomas Edwin Beechem; McDonald, Anthony E.; Fuller, Elliot James; Talin, Albert Alec; Rost, Christina M.; Maria, Jon -Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

    2016-04-01

    The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (1015 – 1018 cm–3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens of microns thick. GaNmore » device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.« less

  16. Inversion domains in GaN grown on sapphire

    SciTech Connect

    Romano, L.T.; Northrup, J.E.; OKeefe, M.A.

    1996-10-01

    Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. {copyright} {ital 1996 American Institute of Physics.}

  17. Intrinsic polarization control in rectangular GaN nanowire lasers

    DOE PAGESBeta

    Li, Changyi; Liu, Sheng; Luk, Ting S.; Figiel, Jeffrey J.; Brener, Igal; Brueck, S. R. J.; Wang, George T.

    2016-02-01

    In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control overmore » the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

  18. Ge doping of GaN beyond the Mott transition

    NASA Astrophysics Data System (ADS)

    Ajay, A.; Schörmann, J.; Jiménez-Rodriguez, M.; Lim, C. B.; Walther, F.; Rohnke, M.; Mouton, I.; Amichi, L.; Bougerol, C.; Den Hertog, M. I.; Eickhoff, M.; Monroy, E.

    2016-11-01

    We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7  ×  1020 cm‑3 at 300 K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron–electron and electron–ion interaction, and Burstein–Moss effect.

  19. Enhanced water splitting with silver decorated GaN photoelectrode

    NASA Astrophysics Data System (ADS)

    Hou, Y.; Syed, Z. A.; Smith, R.; Athanasiou, M.; Gong, Y.; Yu, X.; Bai, J.; Wang, T.

    2016-07-01

    By means of a cost-effective approach, we demonstrate a GaN-based photoelectrode decorated with self-organized silver nano-islands employed for solar powered hydrogen generation, demonstrating 4 times increase in photocurrent compared with a reference sample without using any silver. Our photoelectrode exhibits a 60% incident photon-to-electron conversion efficiency. The enhanced hydrogen generation is attributed to a significantly increased carrier generation rate as a result of strongly localized electric fields induced by surface plasmon coupling effect. The silver coating also contributes to the good chemical stability of our photoelectrode in a strong alkali electrolyte. This work paves the way for the development of GaN and also InGaN based photoelectrodes with ultra-high solar hydrogen conversion efficiency.

  20. Intrinsic polarization control in rectangular GaN nanowire lasers.

    PubMed

    Li, Changyi; Liu, Sheng; Luk, Ting S; Figiel, Jeffrey J; Brener, Igal; Brueck, S R J; Wang, George T

    2016-03-14

    We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444 kW cm(-2) and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates. PMID:26899502

  1. GaN Based Electronics And Their Applications

    NASA Astrophysics Data System (ADS)

    Ren, Fan

    2002-03-01

    The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

  2. Ultrathin GaN nanowires: Electronic, thermal, and thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Davoody, A. H.; Ramayya, E. B.; Maurer, L. N.; Knezevic, I.

    2014-03-01

    We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3-9 nm), doping densities (1018-1020 cm-3), and temperatures (300-1000 K). We calculate the low-field electron mobility based on ensemble Monte Carlo transport simulation coupled with a self-consistent solution of the Poisson and Schrödinger equations. We use the relaxation-time approximation and a Poisson-Schrödinger solver to calculate the electron Seebeck coefficient and thermal conductivity. Lattice thermal conductivity is calculated using a phonon ensemble Monte Carlo simulation, with a real-space rough surface described by a Gaussian autocorrelation function. Throughout the temperature range, the Seebeck coefficient increases while the lattice thermal conductivity decreases with decreasing wire cross section, both boding well for TE applications of thin GaN NWs. However, at room temperature these benefits are eventually overcome by the detrimental effect of surface roughness scattering on the electron mobility in very thin NWs. The highest room-temperature ZT of 0.2 is achieved for 4-nm-thick NWs, while further downscaling degrades it. In contrast, at 1000 K, the electron mobility varies weakly with the NW thickness owing to the dominance of polar optical phonon scattering and multiple subbands contributing to transport, so ZT increases with increasing confinement, and reaches 0.8 for optimally doped 3-nm-thick NWs. The ZT of GaN NWs increases with increasing temperature beyond 1000 K, which further emphasizes their suitability for high-temperature TE applications.

  3. Portrait of Gemini 11 prime and backup crews

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Portrait of Gemini 11 prime and backup crews. Seated are the Gemini 11 prime crewmembers (l.-r.) Astronauts Richard F. Gordon Jr., prime crew pilot, and Charles Conrad Jr., prime crew command pilot. Standing are (l.-r.) Astronauts William A. Anders, backup crew pilot, and Neil Armstrong, backup crew command pilot. They are in their space suits next to a mock-up of the Gemini spacecraft.

  4. The Masked Onset Priming Effect in Picture Naming

    ERIC Educational Resources Information Center

    Schiller, Niels O.

    2008-01-01

    Reading aloud is faster when targets (e.g., "PAIR") are preceded by visually masked primes sharing just the onset (e.g., "pole") compared to all different primes (e.g., "take"). This effect is known as the "masked onset priming effect" (MOPE). One crucial feature of this effect is its presumed non-lexical basis. This aspect of the MOPE is tested…

  5. Do Stimulus-Action Associations Contribute to Repetition Priming?

    ERIC Educational Resources Information Center

    Dennis, Ian; Perfect, Timothy J.

    2013-01-01

    Despite evidence that response learning makes a major contribution to repetition priming, the involvement of response representations at the level of motor actions remains uncertain. Levels of response representation were investigated in 4 experiments that used different tasks at priming and test. Priming for stimuli that required congruent…

  6. Structural Priming and Frequency Effects Interact in Chinese Sentence Comprehension.

    PubMed

    Wei, Hang; Dong, Yanping; Boland, Julie E; Yuan, Fang

    2016-01-01

    Previous research in several European languages has shown that the language processing system is sensitive to both structural frequency and structural priming effects. However, it is currently not clear whether these two types of effects interact during online sentence comprehension, especially for languages that do not have morphological markings. To explore this issue, the present study investigated the possible interplay between structural priming and frequency effects for sentences containing the Chinese ambiguous construction V NP1 de NP2 in a self-paced reading experiment. The sentences were disambiguated to either the more frequent/preferred NP structure or the less frequent VP structure. Each target sentence was preceded by a prime sentence of three possible types: NP primes, VP primes, and neutral primes. When the ambiguous construction V NP1 de NP2 was disambiguated to the dispreferred VP structure, participants experienced more processing difficulty following an NP prime relative to following a VP prime or a neutral baseline. When the ambiguity was resolved to the preferred NP structure, prime type had no effect. These results suggest that structural priming in comprehension is modulated by the baseline frequency of alternative structures, with the less frequent structure being more subject to structural priming effects. These results are discussed in the context of the error-based, implicit learning account of structural priming. PMID:26869954

  7. The Role of Polysemy in Masked Semantic and Translation Priming

    ERIC Educational Resources Information Center

    Finkbeiner, Matthew; Forster, Kenneth; Nicol, Janet; Nakamura, Kumiko

    2004-01-01

    A well-known asymmetry exists in the bilingual masked priming literature in which lexical decision is used: namely, masked primes in the dominant language (L1) facilitate decision times on targets in the less dominant language (L2), but not vice versa. In semantic categorization, on the other hand, priming is symmetrical. In Experiments 1-3 we…

  8. Australia's First Prime Ministerial Library: Past and Future

    ERIC Educational Resources Information Center

    Carman-Brown, Lesley; Henderson, Kandy-Jane; Wallace, Lesley

    2005-01-01

    In creating Australia's first prime ministerial library, a new cultural institution was developed which blends professional practice from the fields of librarianship, education, archives, journalism and museums. The John Curtin Prime Ministerial Library honours the contribution of wartime prime minister John Curtin, works towards the advancement…

  9. Persistent Structural Priming from Language Comprehension to Language Production

    ERIC Educational Resources Information Center

    Bock, Kathryn; Dell, Gary S.; Chang, Franklin; Onishi, Kristine H.

    2007-01-01

    To examine the relationship between syntactic processes in language comprehension and language production, we compared structural persistence from sentence primes that speakers heard to persistence from primes that speakers produced. [Bock, J. K., & Griffin, Z. M. (2000). The persistence of structural priming: transient activation or implicit…

  10. Novel Word Lexicalization and the Prime Lexicality Effect

    ERIC Educational Resources Information Center

    Qiao, Xiaomei; Forster, Kenneth I.

    2013-01-01

    This study investigates how newly learned words are integrated into the first-language lexicon using masked priming. Two lexical decision experiments are reported, with the aim of establishing whether newly learned words behave like real words in a masked form priming experiment. If they do, they should show a prime lexicality effect (PLE), in…

  11. Prospective and Retrospective Processing in Associative Mediated Priming

    ERIC Educational Resources Information Center

    Jones, Lara L.

    2012-01-01

    Mediated priming refers to the faster word recognition of a target (e.g., milk) following presentation of a prime (e.g., pasture) that is related indirectly via a connecting "mediator" (e.g., cow). Association strength may be an important factor in whether mediated priming occurs prospectively (with target activation prior to its presentation) or…

  12. Integrative Priming Occurs Rapidly and Uncontrollably during Lexical Processing

    ERIC Educational Resources Information Center

    Estes, Zachary; Jones, Lara L.

    2009-01-01

    Lexical priming, whereby a prime word facilitates recognition of a related target word (e.g., "nurse" [right arrrow] "doctor"), is typically attributed to association strength, semantic similarity, or compound familiarity. Here, the authors demonstrate a novel type of lexical priming that occurs among unassociated, dissimilar, and unfamiliar…

  13. Attentional Control and the Relatedness Proportion Effect in Semantic Priming

    ERIC Educational Resources Information Center

    Hutchison, Keith A.

    2007-01-01

    In 2 experiments, participants completed both an attentional control battery (OSPAN, antisaccade, and Stroop tasks) and a modified semantic priming task. The priming task measured relatedness proportion (RP) effects within subjects, with the color of the prime indicating the probability that the to-be-named target would be related. In Experiment…

  14. A Statistical Argument for the Weak Twin Primes Conjecture

    ERIC Educational Resources Information Center

    Bruckman, P. S.

    2006-01-01

    Certain definitions introduce appropriate concepts, among which are the definitions of the counting functions of the primes and twin primes, along with definitions of the correlation coefficient in a bivariate sample space. It is argued conjecturally that the characteristic functions of the prime "p" and of the quantity "p"+2 are highly…

  15. Give and Take: Syntactic Priming during Spoken Language Comprehension

    ERIC Educational Resources Information Center

    Thothathiri, Malathi; Snedeker, Jesse

    2008-01-01

    Syntactic priming during language production is pervasive and well-studied. Hearing, reading, speaking or writing a sentence with a given structure increases the probability of subsequently producing the same structure, regardless of whether the prime and target share lexical content. In contrast, syntactic priming during comprehension has proven…

  16. Does "Darkness" Lead to "Happiness"? Masked Suffix Priming Effects

    ERIC Educational Resources Information Center

    Dunabeitia, Jon Andoni; Perea, Manuel; Carreiras, Manuel

    2008-01-01

    Masked affix priming effects have usually been obtained for words sharing the initial affix (e.g., "reaction"-"REFORM"). However, prior evidence on masked suffix priming effects (e.g., "baker"-"WALKER") is inconclusive. In the present series of masked priming lexical decision experiments, a target word was briefly preceded by a morphologically or…

  17. Structural Priming and Frequency Effects Interact in Chinese Sentence Comprehension

    PubMed Central

    Wei, Hang; Dong, Yanping; Boland, Julie E.; Yuan, Fang

    2016-01-01

    Previous research in several European languages has shown that the language processing system is sensitive to both structural frequency and structural priming effects. However, it is currently not clear whether these two types of effects interact during online sentence comprehension, especially for languages that do not have morphological markings. To explore this issue, the present study investigated the possible interplay between structural priming and frequency effects for sentences containing the Chinese ambiguous construction V NP1 de NP2 in a self-paced reading experiment. The sentences were disambiguated to either the more frequent/preferred NP structure or the less frequent VP structure. Each target sentence was preceded by a prime sentence of three possible types: NP primes, VP primes, and neutral primes. When the ambiguous construction V NP1 de NP2 was disambiguated to the dispreferred VP structure, participants experienced more processing difficulty following an NP prime relative to following a VP prime or a neutral baseline. When the ambiguity was resolved to the preferred NP structure, prime type had no effect. These results suggest that structural priming in comprehension is modulated by the baseline frequency of alternative structures, with the less frequent structure being more subject to structural priming effects. These results are discussed in the context of the error-based, implicit learning account of structural priming. PMID:26869954

  18. Gemini 8 prime and backup crews during press conference

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Gemini 8 prime and backup crews during press conference. Left to right are Astronauts David R. Scott, prime crew pilot; Neil A. Armstrong, prime crew command pilot; Charles Conrad Jr., backup crew command pilot; and Richard F. Gordon Jr., backup crew pilot.

  19. Identifiable Orthographically Similar Word Primes Interfere in Visual Word Identification

    ERIC Educational Resources Information Center

    Burt, Jennifer S.

    2009-01-01

    University students participated in five experiments concerning the effects of unmasked, orthographically similar, primes on visual word recognition in the lexical decision task (LDT) and naming tasks. The modal prime-target stimulus onset asynchrony (SOA) was 350 ms. When primes were words that were orthographic neighbors of the targets, and…

  20. 7 CFR 29.1166 - Primings (P Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    .... Grades, Grade Names, Minimum Specifications, and Tolerances P2L—Fine Quality Lemon Primings Prematurely... tolerance 25 percent, of which not over 10 percent may be waste. P3L—Good Quality Lemon Primings Prematurely... tolerance 40 percent, of which not over 20 percent may be waste. P4L—Fair Quality Lemon Primings...

  1. 7 CFR 29.1166 - Primings (P Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    .... Grades, Grade Names, Minimum Specifications, and Tolerances P2L—Fine Quality Lemon Primings Prematurely... tolerance 25 percent, of which not over 10 percent may be waste. P3L—Good Quality Lemon Primings Prematurely... tolerance 40 percent, of which not over 20 percent may be waste. P4L—Fair Quality Lemon Primings...

  2. 7 CFR 29.1166 - Primings (P Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    .... Grades, Grade Names, Minimum Specifications, and Tolerances P2L—Fine Quality Lemon Primings Prematurely... tolerance 25 percent, of which not over 10 percent may be waste. P3L—Good Quality Lemon Primings Prematurely... tolerance 40 percent, of which not over 20 percent may be waste. P4L—Fair Quality Lemon Primings...

  3. 7 CFR 29.1166 - Primings (P Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    .... Grades, Grade Names, Minimum Specifications, and Tolerances P2L—Fine Quality Lemon Primings Prematurely... tolerance 25 percent, of which not over 10 percent may be waste. P3L—Good Quality Lemon Primings Prematurely... tolerance 40 percent, of which not over 20 percent may be waste. P4L—Fair Quality Lemon Primings...

  4. 7 CFR 29.1166 - Primings (P Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    .... Grades, Grade Names, Minimum Specifications, and Tolerances P2L—Fine Quality Lemon Primings Prematurely... tolerance 25 percent, of which not over 10 percent may be waste. P3L—Good Quality Lemon Primings Prematurely... tolerance 40 percent, of which not over 20 percent may be waste. P4L—Fair Quality Lemon Primings...

  5. Transposed-Letter Priming of Prelexical Orthographic Representations

    ERIC Educational Resources Information Center

    Kinoshita, Sachiko; Norris, Dennis

    2009-01-01

    A prime generated by transposing two internal letters (e.g., jugde) produces strong priming of the original word (judge). In lexical decision, this transposed-letter (TL) priming effect is generally weak or absent for nonword targets; thus, it is unclear whether the origin of this effect is lexical or prelexical. The authors describe the Bayesian…

  6. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  7. High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Koblmueller, G.; Wu, F.; Mates, T.; Speck, J. S.; Fernandez-Garrido, S.; Calleja, E.

    2007-11-26

    An alternative approach is presented for the plasma-assisted molecular beam epitaxy of high-quality GaN. Under N-rich growth conditions, an unexpected layer-by-layer growth mode was found for a wide range of growth temperatures in the GaN thermal decomposition regime (>750 deg. C). Consequently, superior surface morphologies with roughness of less than 1 nm (rms) have been achieved. For lightly Si-doped GaN films, room-temperature electron mobilities exceeding 1100 cm{sup 2}/V s were measured, surpassing the commonly insulating nature of GaN grown under N-rich conditions at low temperature.

  8. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

    SciTech Connect

    Fernandez-Garrido, S.; Grandal, J.; Calleja, E.; Sanchez-Garcia, M. A.; Lopez-Romero, D.

    2009-12-15

    The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730-850 deg. C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth.

  9. Crystallographic Wet Chemical Etching of Semipolar GaN (11-22) Grown on m-Plane Sapphire Substrates.

    PubMed

    Kim, Jae-Kwan; Lee, Sung Nam; Song, Keun-Man; Yoon, Jae-Sik; Lee, Ji-Myon

    2015-07-01

    This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution. Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001). The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100 °C, resulting in specific surface features, such as inclined trigonal cells.

  10. Human Immunodeficiency Virus Type 1 Env Trimer Immunization of Macaques and Impact of Priming with Viral Vector or Stabilized Core Protein▿ †

    PubMed Central

    Mörner, Andreas; Douagi, Iyadh; Forsell, Mattias N. E.; Sundling, Christopher; Dosenovic, Pia; O'Dell, Sijy; Dey, Barna; Kwong, Peter D.; Voss, Gerald; Thorstensson, Rigmor; Mascola, John R.; Wyatt, Richard T.; Karlsson Hedestam, Gunilla B.

    2009-01-01

    Currently there is limited information about the quality of immune responses elicited by candidate human immunodeficiency virus type 1 (HIV-1) envelope glycoprotein (Env)-based immunogens in primates. Here we describe a comprehensive analysis of neutralizing antibody and T-cell responses obtained in cynomolgus macaques by three selected immunization regimens. We used the previously described YU2-based gp140 protein trimers administered in an adjuvant, preceded by two distinct priming strategies: either alphavirus replicon particles expressing matched gp140 trimers or gp120 core proteins stabilized in the CD4-bound conformation. The rationale for priming with replicon particles was to evaluate the impact of the expression platform on trimer immunogenicity. The stable core proteins were chosen in an attempt to expand selectively lymphocytes recognizing common determinants between the core and trimers to broaden the immune response. The results presented here demonstrate that the platform by which Env trimers were delivered in the priming (either protein or replicon vector) had little impact on the overall immune response. In contrast, priming with stable core proteins followed by a trimer boost strikingly focused the T-cell response on the core sequences of HIV-1 Env. The specificity of the T-cell response was distinctly different from that of the responses obtained in animals immunized with trimers alone and was shown to be mediated by CD4+ T cells. However, this regimen showed limited or no improvement in the neutralizing antibody responses, suggesting that further immunogen design efforts are required to successfully focus the B-cell response on conserved neutralizing determinants of HIV-1 Env. PMID:19004960

  11. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  12. Repetition priming results in sensitivity attenuation

    PubMed Central

    Allenmark, Fredrik; Hsu, Yi-Fang; Roussel, Cedric; Waszak, Florian

    2015-01-01

    Repetition priming refers to the change in the ability to perform a task on a stimulus as a consequence of a former encounter with that very same item. Usually, repetition results in faster and more accurate performance. In the present study, we used a contrast discrimination protocol to assess perceptual sensitivity and response bias of Gabor gratings that are either repeated (same orientation) or alternated (different orientation). We observed that contrast discrimination performance is worse, not better, for repeated than for alternated stimuli. In a second experiment, we varied the probability of stimulus repetition, thus testing whether the repetition effect is due to bottom-up or top-down factors. We found that it is top-down expectation that determines the effect. We discuss the implication of these findings for repetition priming and related phenomena as sensory attenuation. This article is part of a Special Issue entitled SI: Prediction and Attention. PMID:25819554

  13. Detecting prime numbers via roots of polynomials

    NASA Astrophysics Data System (ADS)

    Dobbs, David E.

    2012-04-01

    It is proved that an integer n ≥ 2 is a prime (resp., composite) number if and only if there exists exactly one (resp., more than one) nth-degree monic polynomial f with coefficients in Z n , the ring of integers modulo n, such that each element of Z n is a root of f. This classroom note could find use in any introductory course on abstract algebra or elementary number theory.

  14. Detecting Prime Numbers via Roots of Polynomials

    ERIC Educational Resources Information Center

    Dobbs, David E.

    2012-01-01

    It is proved that an integer n [greater than or equal] 2 is a prime (resp., composite) number if and only if there exists exactly one (resp., more than one) nth-degree monic polynomial f with coefficients in Z[subscript n], the ring of integers modulo n, such that each element of Z[subscript n] is a root of f. This classroom note could find use in…

  15. The Actual Apollo 13 Prime Crew

    NASA Technical Reports Server (NTRS)

    1970-01-01

    The actual Apollo 13 lunar landing mission prime crew from left to right are: Commander, James A. Lovell Jr., Command Module pilot, John L. Swigert Jr.and Lunar Module pilot, Fred W. Haise Jr. The original Command Module pilot for this mission was Thomas 'Ken' Mattingly Jr. but due to exposure to German measles he was replaced by his backup, Command Module pilot, John L. 'Jack' Swigert Jr.

  16. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    SciTech Connect

    Chen, Jr-Tai Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik

    2015-02-28

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H{sub 2} atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ∼2000 cm{sup 2}/V·s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ∼1 × 10{sup 20 }cm{sup −3} at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm{sup 2} SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  17. Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

    NASA Astrophysics Data System (ADS)

    Chen-Tai, Jr.; Hsu, Chih-Wei; Forsberg, Urban; Janzén, Erik

    2015-02-01

    Severe surface decomposition of semi-insulating (SI) GaN templates occurred in high-temperature H2 atmosphere prior to epitaxial growth in a metalorganic chemical vapor deposition system. A two-step heating process with a surface stabilization technique was developed to preserve the GaN template surface. Utilizing the optimized heating process, a high two-dimensional electron gas mobility ˜2000 cm2/V.s was obtained in a thin AlGaN/AlN/GaN heterostructure with an only 100-nm-thick GaN spacer layer homoepitaxially grown on the GaN template. This technique was also demonstrated viable for native GaN substrates to stabilize the surface facilitating two-dimensional growth of GaN layers. Very high residual silicon and oxygen concentrations were found up to ˜1 × 1020 cm-3 at the interface between the GaN epilayer and the native GaN substrate. Capacitance-voltage measurements confirmed that the residual carbon doping controlled by growth conditions of the GaN epilayer can be used to successfully compensate the donor-like impurities. State-of-the-art structural properties of a high-mobility AlGaN/AlN/GaN heterostructure was then realized on a 1 × 1 cm2 SI native GaN substrate; the full width at half maximum of the X-ray rocking curves of the GaN (002) and (102) peaks are only 21 and 14 arc sec, respectively. The surface morphology of the heterostructure shows uniform parallel bilayer steps, and no morphological defects were noticeable over the entire epi-wafer.

  18. Trans-generational immune priming in honeybees.

    PubMed

    Hernández López, Javier; Schuehly, Wolfgang; Crailsheim, Karl; Riessberger-Gallé, Ulrike

    2014-06-22

    Maternal immune experience acquired during pathogen exposure and passed on to progeny to enhance resistance to infection is called trans-generational immune priming (TgIP). In eusocial insects like honeybees, TgIP would result in a significant improvement of health at individual and colony level. Demonstrated in invertebrates other than honeybees, TgIP has not yet been fully elucidated in terms of intensity and molecular mechanisms underlying this response. Here, we immune-stimulated honeybee queens with Paenibacillus larvae (Pl), a spore-forming bacterium causing American Foulbrood, the most deadly bee brood disease worldwide. Subsequently, offspring of stimulated queens were exposed to spores of Pl and mortality rates were measured to evaluate maternal transfer of immunity. Our data substantiate the existence of TgIP effects in honeybees by direct evaluation of offspring resistance to bacterial infection. A further aspect of this study was to investigate a potential correlation between immune priming responses and prohaemocytes-haemocyte differentiation processes in larvae. The results point out that a priming effect triggers differentiation of prohaemocytes to haemocytes. However, the mechanisms underlying TgIP responses are still elusive and require future investigation.

  19. Initial models in conditionals: evidence from priming.

    PubMed

    Espino, Orlando; Santamaría, Carlos

    2008-05-01

    We examined the comprehension of different types of conditionals. We measured the reading time of sentences primed by different types of conditionals (Experiments 1 and 2). We found that the participants read not-p and not-q faster when it was primed by the conditional form p if q and they were slower to read p and q when it was primed by the conditional form p only if q. This effect disappeared in the second experiment, where the order of the elements was reversed (q and p and not-q and not-p). These results suggest that the conditional form p if q elicits an initial representation "from p to q" with two possibilities, while the conditional form p only if q elicits a reverse representation with only one possibility. The third experiment showed that there were effects of the order only for the conditional if p then q, which confirms the reverse representation hypothesis. We discuss the implications of these results for different theories of conditional comprehension.

  20. Trans-generational immune priming in honeybees

    PubMed Central

    Hernández López, Javier; Schuehly, Wolfgang; Crailsheim, Karl; Riessberger-Gallé, Ulrike

    2014-01-01

    Maternal immune experience acquired during pathogen exposure and passed on to progeny to enhance resistance to infection is called trans-generational immune priming (TgIP). In eusocial insects like honeybees, TgIP would result in a significant improvement of health at individual and colony level. Demonstrated in invertebrates other than honeybees, TgIP has not yet been fully elucidated in terms of intensity and molecular mechanisms underlying this response. Here, we immune-stimulated honeybee queens with Paenibacillus larvae (Pl), a spore-forming bacterium causing American Foulbrood, the most deadly bee brood disease worldwide. Subsequently, offspring of stimulated queens were exposed to spores of Pl and mortality rates were measured to evaluate maternal transfer of immunity. Our data substantiate the existence of TgIP effects in honeybees by direct evaluation of offspring resistance to bacterial infection. A further aspect of this study was to investigate a potential correlation between immune priming responses and prohaemocytes–haemocyte differentiation processes in larvae. The results point out that a priming effect triggers differentiation of prohaemocytes to haemocytes. However, the mechanisms underlying TgIP responses are still elusive and require future investigation. PMID:24789904

  1. Hydrothermal syntheses, crystal structures and luminescence properties of zinc(II) and cadmium(II) coordination polymers based on bifunctional 3,2 Prime :6 Prime ,3 Prime Prime -terpyridine-4 Prime -carboxylic acid

    SciTech Connect

    Li, Na; Guo, Hui-Lin; Hu, Huai-Ming; Song, Juan; Xu, Bing; Yang, Meng-Lin; Dong, Fa-Xin; Xue, Gang-Lin

    2013-02-15

    Five new coordination polymers, [Zn{sub 2}(ctpy){sub 2}Cl{sub 2}]{sub n} (1), [Zn{sub 2}(ctpy){sub 2}(ox)(H{sub 2}O){sub 2}]{sub n} (2), [Zn{sub 2}(ctpy)(3-btc)(H{sub 2}O)]{sub n}{center_dot}0.5nH{sub 2}O (3), [Cd(ctpy){sub 2}(H{sub 2}O)]{sub n} (4), [Cd{sub 4}(ctpy){sub 2}(2-btc){sub 2}(H{sub 2}O){sub 2}]{sub n}{center_dot}2nH{sub 2}O (5), (Hctpy=3,2 Prime :6 Prime ,3 Prime Prime -terpyridine-4 Prime -carboxylic acid, H{sub 2}ox=oxalic acid, H{sub 3}(3-btc)=1,3,5-benzenetricarboxylic acid, H{sub 3}(2-btc)=1,2,4-benzenetricarboxylic acid) have been synthesized under hydrothermal conditions and characterized by elemental analysis, IR spectroscopy, and single-crystal X-ray diffraction. Compounds 1-2 are a one-dimensional chain with weak interactions to form 3D supramolecular structures. Compound 3 is a 4-nodal 3D topology framework comprised of binuclear zinc units and (ctpy){sup -} anions. Compound 4 shows two dimensional net. Compound 5 is a (4,5,6)-connected framework with {l_brace}4{sup 4}{center_dot}6{sup 2}{r_brace}{l_brace}4{sup 6}{center_dot}6{sup 4}{r_brace}{sub 2}{l_brace}4{sup 9}{center_dot}6{sup 6}{r_brace} topology. In addition, the thermal stabilities and photoluminescence properties of 1-5 were also studied in the solid state. - Graphical abstract: Five new Zn/Cd compounds with 3,2 Prime :6 Prime ,3 Prime Prime -terpyridine-4 Prime -carboxylic acid were prepared. The photoluminescence and thermal stabilities properties of 1-5 were investigated in the solid state. Highlights: Black-Right-Pointing-Pointer Five new zinc/cadmium metal-organic frameworks have been hydrothermal synthesized. Black-Right-Pointing-Pointer The structural variation is attributed to the diverse metal ions and auxiliary ligand. Black-Right-Pointing-Pointer Compounds 1-5 exhibit 1D ring chain, 2D layer and 3D open-framework, respectively. Black-Right-Pointing-Pointer These compounds exhibit strong solid state luminescence emission at room temperature.

  2. Piezo-generator integrating a vertical array of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Jamond, N.; Chrétien, P.; Houzé, F.; Lu, L.; Largeau, L.; Maugain, O.; Travers, L.; Harmand, J. C.; Glas, F.; Lefeuvre, E.; Tchernycheva, M.; Gogneau, N.

    2016-08-01

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ˜12.7 mW cm-3. This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  3. Zn-dopant dependent defect evolution in GaN nanowires.

    PubMed

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-21

    Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

  4. Piezo-generator integrating a vertical array of GaN nanowires.

    PubMed

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters. PMID:27363777

  5. Piezo-generator integrating a vertical array of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Jamond, N.; Chrétien, P.; Houzé, F.; Lu, L.; Largeau, L.; Maugain, O.; Travers, L.; Harmand, J. C.; Glas, F.; Lefeuvre, E.; Tchernycheva, M.; Gogneau, N.

    2016-08-01

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm‑3. This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  6. Piezo-generator integrating a vertical array of GaN nanowires.

    PubMed

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  7. Masked repetition priming and proportion effects under cognitive load.

    PubMed

    Bodner, Glen E; Stalinski, Stephanie M

    2008-06-01

    The authors used a cognitive load manipulation (rehearsing a string of digits during the trial) to test the automaticity of (a) masked repetition priming and (b) the masked repetition proportion (RP) effect (i.e., greater priming when the proportion of repetition-prime trials is higher) in the lexical decision task. The RP (.2 vs. .8) was varied across blocks. Masked priming was not reduced under load compared with a no-load group. Surprisingly, only the load group showed an RP effect in response latencies, although the no-load group showed an RP effect in the error rates. Our results show that masked priming is automatic, yet the influence of masked primes can nonetheless be adjusted at an unconscious level. Implications for accounts of masked priming are discussed. PMID:18572990

  8. Intact Conceptual Priming in the Absence of Declarative Memory

    PubMed Central

    Levy, D.A.; Stark, C.E.L.; Squire, L.R.

    2009-01-01

    Priming is an unconscious (nondeclarative) form of memory whereby identification or production of an item is improved by an earlier encounter. It has been proposed that declarative memory and priming might be related—for example, that conceptual priming results in more fluent processing, thereby providing a basis for familiarity judgments. In two experiments, we assessed conceptual priming and recognition memory across a 5-min interval in 5 memory-impaired patients. All patients exhibited fully intact priming in tests of both free association (study tent; at test, provide an association to canvas) and category verification (study lemon; at test, decide: Is lemon a type of fruit?). Yet the 2 most severely amnesic patients performed at chance on matched tests of recognition memory. These findings count against the notion that conceptual priming provides feelings of familiarity that can support accurate recognition judgments. We suggest that priming is inaccessible to conscious awareness and does not influence declarative memory. PMID:15447639

  9. Task-Dependent Masked Priming Effects in Visual Word Recognition

    PubMed Central

    Kinoshita, Sachiko; Norris, Dennis

    2012-01-01

    A method used widely to study the first 250 ms of visual word recognition is masked priming: These studies have yielded a rich set of data concerning the processes involved in recognizing letters and words. In these studies, there is an implicit assumption that the early processes in word recognition tapped by masked priming are automatic, and masked priming effects should therefore be invariant across tasks. Contrary to this assumption, masked priming effects are modulated by the task goal: For example, only word targets show priming in the lexical decision task, but both words and non-words do in the same-different task; semantic priming effects are generally weak in the lexical decision task but are robust in the semantic categorization task. We explain how such task dependence arises within the Bayesian Reader account of masked priming (Norris and Kinoshita, 2008), and how the task dissociations can be used to understand the early processes in lexical access. PMID:22675316

  10. Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Gagnon, Jarod C.; Shen, Haoting; Yuwen, Yu; Wang, Ke; Mayer, Theresa S.; Redwing, Joan M.

    2016-07-01

    A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN "fins" were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.

  11. Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

    NASA Astrophysics Data System (ADS)

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Yang, P.; Tan, H. R.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-01

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the {111} facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si{111} growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (IYL/INBE) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E2(high) optical phonon mode at 565.224 ± 0.001 cm-1 with a narrow full width at half maximum of 1.526 ± 0.002 cm-1 was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si{111} surface etched on Si(100).

  12. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

    SciTech Connect

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Tan, H. R.; Yang, P.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-28

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

  13. Social Anxiety Modulates Subliminal Affective Priming

    PubMed Central

    Paul, Elizabeth S.; Pope, Stuart A. J.; Fennell, John G.; Mendl, Michael T.

    2012-01-01

    Background It is well established that there is anxiety-related variation between observers in the very earliest, pre-attentive stage of visual processing of images such as emotionally expressive faces, often leading to enhanced attention to threat in a variety of disorders and traits. Whether there is also variation in early-stage affective (i.e. valenced) responses resulting from such images, however, is not yet known. The present study used the subliminal affective priming paradigm to investigate whether people varying in trait social anxiety also differ in their affective responses to very briefly presented, emotionally expressive face images. Methodology/Principal Findings Participants (n = 67) completed a subliminal affective priming task, in which briefly presented and smiling, neutral and angry faces were shown for 10 ms durations (below objective and subjective thresholds for visual discrimination), and immediately followed by a randomly selected Chinese character mask (2000 ms). Ratings of participants' liking for each Chinese character indicated the degree of valenced affective response made to the unseen emotive images. Participants' ratings of their liking for the Chinese characters were significantly influenced by the type of face image preceding them, with smiling faces generating more positive ratings than neutral and angry ones (F(2,128) = 3.107, p<0.05). Self-reported social anxiety was positively correlated with ratings of smiling relative to neutral-face primed characters (Pearson's r = .323, p<0.01). Individual variation in self-reported mood awareness was not associated with ratings. Conclusions Trait social anxiety is associated with individual variation in affective responding, even in response to the earliest, pre-attentive stage of visual image processing. However, the fact that these priming effects are limited to smiling and not angry (i.e. threatening) images leads us to propose that the pre-attentive processes involved in

  14. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  15. Semantic Priming from Letter-Searched Primes Occurs for Low- but Not High-Frequency Targets: Automatic Semantic Access May Not Be a Myth

    ERIC Educational Resources Information Center

    Tse, Chi-Shing; Neely, James H.

    2007-01-01

    Letter-search (LS) within a prime often eliminates semantic priming. In 2 lexical decision experiments, the authors found that priming from LS primes occurred for low-frequency (LF) but not high-frequency (HF) targets whether the target's word frequency was manipulated between or within participants and whether the prime-target pairs were…

  16. The masked priming toolbox: an open-source MATLAB toolbox for masked priming researchers.

    PubMed

    Wilson, Andrew D; Tresilian, James; Schlaghecken, Friederike

    2011-03-01

    The Masked Priming Toolbox is an open-source collection of MATLAB functions that utilizes the free third-party PsychToolbox-3 (PTB3: Brainard, Spatial Vision, 10, 433-436, 1997; Kleiner, Brainard & Pelli, Perception, 36, 2007; Pelli, Spatial Vision, 10, 437-442, 1997). It is designed to allow a researcher to run masked (and unmasked) priming experiments using a variety of response devices (including keyboards, graphics tablets and force transducers). Very little knowledge of MATLAB is required; experiments are generated by creating a text file with the required parameters, and raw and analyzed data are output to Excel (as well as MATLAB) files for further analysis. The toolbox implements a variety of stimuli for use as primes and targets, as well as a variety of masks. Timing, size, location, and orientation of stimuli are all parameterizable. The code is open-source and made available on the Web under a Creative Commons License.

  17. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  18. Priming healthy eating. You can't prime all the people all of the time☆

    PubMed Central

    Forwood, Suzanna E.; Ahern, Amy L.; Hollands, Gareth J.; Ng, Yin-Lam; Marteau, Theresa M.

    2015-01-01

    Objective In the context of a food purchasing environment filled with advertising and promotions, and an increased desire from policy makers to guide individuals toward choosing healthier foods, this study tests whether priming methods that use healthy food adverts to increase preference for healthier food generalize to a representative population. MethodsIn two studies (Study 1 n = 143; Study 2 n = 764), participants were randomly allocated to a prime condition, where they viewed fruit and vegetable advertisements, or a control condition, with no advertisements. A subsequent forced choice task assessed preference between fruits and other sweet snacks. Additional measures included current hunger and thirst, dietary restraint, age, gender, education and self-reported weight and height. ResultsIn Study 1, hunger reduced preferences for fruits (OR (95% CI) = 0.38 (0.26–0.56), p < 0.0001), an effect countered by the prime (OR (95% CI) = 2.29 (1.33–3.96), p = 0.003). In Study 2, the effect of the prime did not generalize to a representative population. More educated participants, as used in Study 1, chose more fruit when hungry and primed (OR (95% CI) = 1.42 (1.13–1.79), p = 0.003), while less educated participants' fruit choice was unaffected by hunger or the prime. ConclusionThis study provides preliminary evidence that the effects of adverts on healthy eating choices depend on key individual traits (education level) and states (hunger), do not generalize to a broader population and have the potential to increase health inequalities arising from food choice. PMID:25636234

  19. [The different functions of glnB and glnZ from Azospirillum brasilense YU62 in the control of nitrogen fixation].

    PubMed

    Chen, S; Guan, Y; Ying, J; Li, Z; Wang, J; Li, J

    2001-10-01

    The glnB and glnZ genes of A. brasilense have 70% homology at nucleotide sequence. glnB is located in a 3.7 kb Eco RI+ PstI fragment and glnZ is located in a 3.7 kb SalI fragment. Both glnB and glnZ genes were mutagenized by Kmr cassette insertions and glnB- and glnZ- mutants were obtained. glnB- mutant did not have any nitrogenase activity, while glnZ- mutant still has nitrogenase activity. The coding regions of glnB and glnZ were cloned into pVK100 vectors and recombinant plasmids pVK-II and pVK-Z were obtained, respectively. The recombinant plasmids pVK-II and pVK-Z were introduced into glnB- and glnZ- to produce C-glnB and C-glnZ, respectively. C-glnB can restore nitrogenase activity and C-glnZ does not have effect on nitrogenase activity. When pVK-II and pVK-Z were introduced into A. brasilense Yu62 and draT-, respectively, the Yu62-II (containing pVK-II) and draT-II (containing pVK-II) have higher nitrogenase activity than that of wild type Yu62. In contrast, Yu62-Z (containing pVK-Z) and draT-Z (containing pVK-Z) has no effect on nitrogenase activity. The nifA(-)-II (containg pVK-II) and nifA(-)-Z (containing pVK-Z) still have no nitrogenase activity.

  20. Synthesis and field emission studies of tower-like GaN nanowires

    PubMed Central

    2014-01-01

    Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are 101¯1 and 101¯1¯ facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials. PACS 81.15.Gh; 68.37.Lp; 68.37.Vj PMID:25404876

  1. Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

    SciTech Connect

    Zang, K.Y.; Wang, Y.D.; Chua, S.J.; Wang, L.S.

    2005-11-07

    We demonstrate that GaN can selectively grow by metalorganic chemical vapor deposition into the pores and laterally over the nanoscale patterned SiO{sub 2} mask on a template of GaN/AlN/Si. The nanoporous SiO{sub 2} on GaN surface with pore diameter of approximately 65 nm and pore spacing of 110 nm was created by inductively coupled plasma etching using anodic aluminum oxide template as a mask. Cross-section transmission electron microscopy shows that the threading-dislocation density was largely reduced in this nanoepitaxial lateral overgrowth region. Dislocations parallel to the interface are the dominant type of dislocations in the overgrown layer of GaN. A large number of the threading dislocations were filtered by the nanoscale mask, which leads to the dramatic reduction of the threading dislocations during the growth within the nano-openings. More importantly, due to the nanoscale size of the mask area, the very fast coalescence and subsequent lateral overgrowth of GaN force the threading dislocations to bend to the basal plane within the first 50 nm of the film thickness. The structure of overgrown GaN is a truncated hexagonal pyramid which is covered with six {l_brace}1101{r_brace} side facets and (0001) top surface depending on the growth conditions.

  2. Individual GaN nanowires exhibit strong piezoelectricity in 3D.

    PubMed

    Minary-Jolandan, Majid; Bernal, Rodrigo A; Kuljanishvili, Irma; Parpoil, Victor; Espinosa, Horacio D

    2012-02-01

    Semiconductor GaN NWs are promising components in next generation nano- and optoelectronic systems. In addition to their direct band gap, they exhibit piezoelectricity, which renders them particularly attractive in energy harvesting applications for self-powered devices. Nanowires are often considered as one-dimensional nanostructures; however, the electromechanical coupling leads to a third rank tensor that for wurtzite crystals (GaN NWs) possesses three independent coefficients, d(33), d(13), and d(15). Therefore, the full piezoelectric characterization of individual GaN NWs requires application of electric fields in different directions and measurements of associated displacements on the order of several picometers. In this Letter, we present an experimental approach based on scanning probe microscopy to directly quantify the three-dimensional piezoelectric response of individual GaN NWs. Experimental results reveal that GaN NWs exhibit strong piezoelectricity in three dimensions, with up to six times the effect in bulk. Based on finite element modeling, this finding has major implication on the design of energy harvesting systems exhibiting unprecedented levels of power density production. The presented method is applicable to other piezoelectric NW materials as well as wires manufactured along different crystallographic orientations.

  3. Characterization of the Erwinia chrysanthemi Gan locus, involved in galactan catabolism.

    PubMed

    Delangle, Aurélie; Prouvost, Anne-France; Cogez, Virginie; Bohin, Jean-Pierre; Lacroix, Jean-Marie; Cotte-Pattat, Nicole Hugouvieux

    2007-10-01

    beta-1,4-Galactan is a major component of the ramified regions of pectin. Analysis of the genome of the plant pathogenic bacteria Erwinia chrysanthemi revealed the presence of a cluster of eight genes encoding proteins potentially involved in galactan utilization. The predicted transport system would comprise a specific porin GanL and an ABC transporter made of four proteins, GanFGK(2). Degradation of galactans would be catalyzed by the periplasmic 1,4-beta-endogalactanase GanA, which released oligogalactans from trimer to hexamer. After their transport through the inner membrane, oligogalactans would be degraded into galactose by the cytoplasmic 1,4-beta-exogalactanase GanB. Mutants affected for the porin or endogalactanase were unable to grow on galactans, but they grew on galactose and on a mixture of galactotriose, galactotetraose, galactopentaose, and galactohexaose. Mutants affected for the periplasmic galactan binding protein, the transporter ATPase, or the exogalactanase were only able to grow on galactose. Thus, the phenotypes of these mutants confirmed the functionality of the gan locus in transport and catabolism of galactans. These mutations did not affect the virulence of E. chrysanthemi on chicory leaves, potato tubers, or Saintpaulia ionantha, suggesting an accessory role of galactan utilization in the bacterial pathogeny.

  4. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence.

    PubMed

    Sarwar, A T M Golam; May, Brelon J; Chisholm, Matthew F; Duscher, Gerd J; Myers, Roberto C

    2016-04-21

    By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaN insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. The shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.

  5. Characterization of the Erwinia chrysanthemi Gan locus, involved in galactan catabolism.

    PubMed

    Delangle, Aurélie; Prouvost, Anne-France; Cogez, Virginie; Bohin, Jean-Pierre; Lacroix, Jean-Marie; Cotte-Pattat, Nicole Hugouvieux

    2007-10-01

    beta-1,4-Galactan is a major component of the ramified regions of pectin. Analysis of the genome of the plant pathogenic bacteria Erwinia chrysanthemi revealed the presence of a cluster of eight genes encoding proteins potentially involved in galactan utilization. The predicted transport system would comprise a specific porin GanL and an ABC transporter made of four proteins, GanFGK(2). Degradation of galactans would be catalyzed by the periplasmic 1,4-beta-endogalactanase GanA, which released oligogalactans from trimer to hexamer. After their transport through the inner membrane, oligogalactans would be degraded into galactose by the cytoplasmic 1,4-beta-exogalactanase GanB. Mutants affected for the porin or endogalactanase were unable to grow on galactans, but they grew on galactose and on a mixture of galactotriose, galactotetraose, galactopentaose, and galactohexaose. Mutants affected for the periplasmic galactan binding protein, the transporter ATPase, or the exogalactanase were only able to grow on galactose. Thus, the phenotypes of these mutants confirmed the functionality of the gan locus in transport and catabolism of galactans. These mutations did not affect the virulence of E. chrysanthemi on chicory leaves, potato tubers, or Saintpaulia ionantha, suggesting an accessory role of galactan utilization in the bacterial pathogeny. PMID:17644603

  6. Characterization of the Erwinia chrysanthemi gan Locus, Involved in Galactan Catabolism▿ †

    PubMed Central

    Delangle, Aurélie; Prouvost, Anne-France; Cogez, Virginie; Bohin, Jean-Pierre; Lacroix, Jean-Marie; Cotte-Pattat, Nicole Hugouvieux

    2007-01-01

    β-1,4-Galactan is a major component of the ramified regions of pectin. Analysis of the genome of the plant pathogenic bacteria Erwinia chrysanthemi revealed the presence of a cluster of eight genes encoding proteins potentially involved in galactan utilization. The predicted transport system would comprise a specific porin GanL and an ABC transporter made of four proteins, GanFGK2. Degradation of galactans would be catalyzed by the periplasmic 1,4-β-endogalactanase GanA, which released oligogalactans from trimer to hexamer. After their transport through the inner membrane, oligogalactans would be degraded into galactose by the cytoplasmic 1,4-β-exogalactanase GanB. Mutants affected for the porin or endogalactanase were unable to grow on galactans, but they grew on galactose and on a mixture of galactotriose, galactotetraose, galactopentaose, and galactohexaose. Mutants affected for the periplasmic galactan binding protein, the transporter ATPase, or the exogalactanase were only able to grow on galactose. Thus, the phenotypes of these mutants confirmed the functionality of the gan locus in transport and catabolism of galactans. These mutations did not affect the virulence of E. chrysanthemi on chicory leaves, potato tubers, or Saintpaulia ionantha, suggesting an accessory role of galactan utilization in the bacterial pathogeny. PMID:17644603

  7. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-08-01

    Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp.

  8. Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

    NASA Astrophysics Data System (ADS)

    Zhao, Dan-Mei; Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Zhu, Jian-Jun; Chen, Ping; Liu, Wei; Li, Xiang; Shi, Ming

    2015-10-01

    In this paper, the temperature-dependent photoluminescence (PL) properties of GaN grown on Si (111) substrate are studied. The main emission peaks of GaN films grown on Si (111) are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FXA and D0X peaks, of GaN films grown on Si (111) substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the GaN films grown on sapphire are under the action of compressive stress, while those grown on Si (111) substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in GaN films grown on Si (111) and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well (QW) emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017).

  9. Properties of Gallium Disorder and Gold Implants in GaN

    SciTech Connect

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Shutthanandan, V; DB Poker, SC Moss, K-H Heinig

    2001-04-25

    Epitaxial single-crystal GaN films on sapphire were implanted 60? off the <0001> surface normal with 1 MeV Auor 3 MeV Au over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near-surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. Migration of Au implants in GaN is observed during ion implantation at 300 K. As a result of thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm) applied at 300 K.

  10. Synthesis, microstructure, and cathodoluminescence of [0001]-oriented GaN nanorods grown on conductive graphite substrate.

    PubMed

    Yuan, Fang; Liu, Baodan; Wang, Zaien; Yang, Bing; Yin, Yao; Dierre, Benjamin; Sekiguchi, Takashi; Zhang, Guifeng; Jiang, Xin

    2013-11-27

    One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process. The morphologies and microstructures of GaN nanorods were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results from HRTEM analysis indicate that the GaN nanorods are well-crystallized and exhibit a preferential orientation along the [0001] direction with Ga(3+)-terminated (101̅1) and N(3-)-terminated (101̅1̅) as side facets, finally leading to the corrugated morphology surface. The stabilization of the electrostatic surface energy of {101̅1} polar surface in a wurtzite-type hexagonal structure plays a key role in the formation of GaN nanorods with corrugated morphology. Room-temperature cathodoluminescence (CL) measurements show a near-band-edge emission (NBE) in the ultraviolet range and a broad deep level emission (DLE) in the visible range. The crystallography and the optical emissions of GaN nanorods are discussed. PMID:24164686

  11. GaN detector development for particle and X-ray detection

    NASA Astrophysics Data System (ADS)

    Owens, Alan; Barnes, A.; Farley, R. A.; Germain, M.; Sellin, P. J.

    2012-12-01

    We report on preliminary alpha particle and X-ray measurements on a number of prototype GaN PIN diodes. The aim of the study was to investigate the potential use of GAN based radiation detectors for radiation hard, high temperature, solar blind space applications. The devices have a planar structure consisting of a 2 μm epitaxial GaN layer grown on a highly doped n-type AlxGa1-xN nucleation layer, which in turn is deposited on a p-type 4H-SiC substrate. Au ohmic contacts were applied to the top of the GaN layer and the bottom of the substrate. A number of different sized devices were tested with contact diameters ranging from 0.4 mm to 0.7 mm. All devices showed good diode behaviour with reverse leakage currents in the tens to hundreds of micro-amp range. C-V measurements showed that the GaN layers were fully depleted for biases >20 V. When exposed to a 5.5 MeV alpha particle source, the devices showed a spectroscopic response with energy resolutions of ∼25% FWHM at room temperature (RT) and 10 V bias and 20% FWHM at -50 °C. These values are consistent with the previous measurements. No response to 60 keV photons could be measured.

  12. Transport properties, specific heat and thermal conductivity of GaN nanocrystalline ceramic

    SciTech Connect

    Sulkowski, Czeslaw; ChuchmaLa, Andrzej; Zaleski, Andrzej J.; Matusiak, Marcin; Mucha, Jan; GLuchowski, PaweL; Strek, WiesLaw

    2010-10-15

    The structural and transport properties (resistivity, thermopower and Hall effect), specific heat and thermal conductivity have been measured for GaN nanocrystalline ceramic prepared by hot pressing. It was found that the temperature dependence of resistivity in temperature range 10-300 K shows the very low activation energy, which is ascribed to the shallow donor doping originating in amorphous phase of sample. The major charge carriers are electrons, what is indicated by negative sign of Hall constant and Seebeck coefficient. The thermopower attains large values (-58 {mu}V/K at 300 K) and was characterized by linear temperature dependence which suggests the diffusion as a major contribution to Seebeck effect. The high electron concentration of 1.3x10{sup 19} cm{sup -3} and high electronic specific heat coefficient determined to be 2.4 mJ/molK{sup 2} allow to conclude that GaN ceramic demonstrates the semimetallic-like behavior accompanied by very small mobility of electrons ({approx}0.1 cm{sup 2}/V s) which is responsible for its high resistivity. A low heat conductivity of GaN ceramics is associated with partial amorphous phase of GaN grains due to high pressure sintering. - Graphical Abstract: Thermal resistivity and thermopower measurements indicates the high phonon scattering and lack of phonon-drag contribution to thermopower in GaN nanoceramics pressed under 4 GPa at 800 {sup o}C.

  13. [A brief textual research on circulated versions of Dan tai yu an (Jade Case Records of Red Stage].

    PubMed

    Xu, Gao; Zhu, Jianping

    2014-03-01

    Dan tai yu an (Jade Case Records of Red Stage) was compiled by a doctor of the Ming Dynasty Sun Wenyin, including 6 volumes. This book involves Chinese internal medicine, paediatrics, gynaecology, external medicine, and Department of the sense organs (ENT) classified into 73 categories, each of which contains 80 kinds of disease. The total number of disease was 157. Each kind of disease is discussed under the order of etiology, syndrome, pulse condition and treatment. The range of traditional Chinese prescriptions in this book is rather extensive with its indications, administrations and modification of main prescriptions given concretely. Both internal and external treatment are included, and the individual drug and proved recipe are practical and effective, which is a significant reference to clinical practice. There are many versions of this book extant. According to our investigation and research, we replenished some information to the"General Catalogue of TCM Ancient Books", and at the same time, correct some mistakes, providing the basis for further collation and publishing.

  14. Ancient Chinese Formula Qiong-Yu-Gao Protects Against Cisplatin-Induced Nephrotoxicity Without Reducing Anti-tumor Activity

    PubMed Central

    Teng, Zhi-Ying; Cheng, Xiao-Lan; Cai, Xue-Ting; Yang, Yang; Sun, Xiao-Yan; Xu, Jin-Di; Lu, Wu-Guang; Chen, Jiao; Hu, Chun-Ping; Zhou, Qian; Wang, Xiao-Ning; Li, Song-Lin; Cao, Peng

    2015-01-01

    Cisplatin is a highly effective anti-cancer chemotherapeutic agent; however, its clinical use is severely limited by serious side effects, of which nephrotoxicity is the most important. In this study, we investigated whether Qiong-Yu-Gao (QYG), a popular traditional Chinese medicinal formula described 840 years ago, exhibits protective effects against cisplatin-induced renal toxicity. Using a mouse model of cisplatin-induced renal dysfunction, we observed that pretreatment with QYG attenuated cisplatin-induced elevations in blood urea nitrogen and creatinine levels, ameliorated renal tubular lesions, reduced apoptosis, and accelerated tubular cell regeneration. Cisplatin-mediated elevations in tumor necrosis factor alpha (TNF-α) mRNA, interleukin-1 beta (IL-1β) mRNA, and cyclooxygenase-2 (COX-2) protein in the kidney were also significantly suppressed by QYG treatment. Furthermore, QYG reduced platinum accumulation in the kidney by decreasing the expression of copper transporter 1 and organic cation transporter 2. An in vivo study using implanted Lewis lung cancer cells revealed that concurrent administration of QYG and cisplatin did not alter the anti-tumor activity of cisplatin. Our findings suggest that the traditional Chinese medicinal formula QYG inhibits cisplatin toxicity by several mechanisms that act simultaneously, without compromising its therapeutic efficacy. Therefore, QYG may be useful in the clinic as a protective agent to prevent cisplatin-induced nephrotoxicity. PMID:26510880

  15. Metabolic profiling of Shu-Yu capsule in rat serum based on metabolic fingerprinting analysis using HPLC-ESI-MSn

    PubMed Central

    LI, FANG; ZHANG, YOU-BO; WEI, XIA; SONG, CHUN-HONG; QIAO, MING-QI; ZHANG, HUI-YUN

    2016-01-01

    The Chinese herbal formula, Shu-Yu capsule (SYC), has been successfully used to treat depression-like disorders in clinical settings. To rapidly identify the chemical constituents of SYC and its metabolites in rat serum, a simple and sensitive liquid chromatography-tandem mass spectrometry method was established in the present study. By comparing the retention times, MS and MSn spectra data in the literature and reference standards, a total of 73 compounds were identified from SYC. In rat serum, 62 components, including 13 prototype compounds and 49 metabolites were identified. Of these components, 14 metabolites were confirmed as novel metabolites of SYC. The results of the present study indicated that certain flavonoid glycosides and monoterpene glycosides were absorbed directly. Glucuronidation and sulfation were identified as the predominant metabolic pathways of the components in SYC. In addition, certain phase I reactions, including hydrolysis, demethylation and hydroxylation occurred in the rats. These results provide scientific evidence, which support further investigations of the pharmacology and mechanism of SYC. PMID:27052341

  16. The nature of affective priming in music and speech.

    PubMed

    Goerlich, Katharina Sophia; Witteman, Jurriaan; Schiller, Niels O; Van Heuven, Vincent J; Aleman, André; Martens, Sander

    2012-08-01

    The phenomenon of affective priming has caught scientific interest for over 30 years, yet the nature of the affective priming effect remains elusive. This study investigated the underlying mechanism of cross-modal affective priming and the influence of affective incongruence in music and speech on negativities in the N400 time-window. In Experiment 1, participants judged the valence of affective targets (affective categorization). We found that music and speech targets were evaluated faster when preceded by affectively congruent visual word primes, and vice versa. This affective priming effect was accompanied by a significantly larger N400-like effect following incongruent targets. In this experiment, both spreading of activation and response competition could underlie the affective priming effect. In Experiment 2, participants categorized the same affective targets based on nonaffective characteristics. However, as prime valence was irrelevant to the response dimension, affective priming effects could no longer be attributable to response competition. In Experiment 2, affective priming effects were observed neither at the behavioral nor electrophysiological level. The results of this study indicate that both affective music and speech prosody can prime the processing of visual words with emotional connotations, and vice versa. Affective incongruence seems to be associated with N400-like effects during evaluative categorization. The present data further suggest a role of response competition during the affective categorization of music, prosody, and words with emotional connotations.

  17. How Orthography Modulates Morphological Priming: Subliminal Kanji Activation in Japanese

    PubMed Central

    Nakano, Yoko; Ikemoto, Yu; Jacob, Gunnar; Clahsen, Harald

    2016-01-01

    The current study investigates to what extent masked morphological priming is modulated by language-particular properties, specifically by its writing system. We present results from two masked priming experiments investigating the processing of complex Japanese words written in less common (moraic) scripts. In Experiment 1, participants performed lexical decisions on target verbs; these were preceded by primes which were either (i) a past-tense form of the same verb, (ii) a stem-related form with the epenthetic vowel -i, (iii) a semantically-related form, and (iv) a phonologically-related form. Significant priming effects were obtained for prime types (i), (ii), and (iii), but not for (iv). This pattern of results differs from previous findings on languages with alphabetic scripts, which found reliable masked priming effects for morphologically related prime/target pairs of type (i), but not for non-affixal and semantically-related primes of types (ii), and (iii). In Experiment 2, we measured priming effects for prime/target pairs which are neither morphologically, semantically, phonologically nor - as presented in their moraic scripts—orthographically related, but which—in their commonly written form—share the same kanji, which are logograms adopted from Chinese. The results showed a significant priming effect, with faster lexical-decision times for kanji-related prime/target pairs relative to unrelated ones. We conclude that affix-stripping is insufficient to account for masked morphological priming effects across languages, but that language-particular properties (in the case of Japanese, the writing system) affect the processing of (morphologically) complex words. PMID:27065895

  18. How Orthography Modulates Morphological Priming: Subliminal Kanji Activation in Japanese.

    PubMed

    Nakano, Yoko; Ikemoto, Yu; Jacob, Gunnar; Clahsen, Harald

    2016-01-01

    The current study investigates to what extent masked morphological priming is modulated by language-particular properties, specifically by its writing system. We present results from two masked priming experiments investigating the processing of complex Japanese words written in less common (moraic) scripts. In Experiment 1, participants performed lexical decisions on target verbs; these were preceded by primes which were either (i) a past-tense form of the same verb, (ii) a stem-related form with the epenthetic vowel -i, (iii) a semantically-related form, and (iv) a phonologically-related form. Significant priming effects were obtained for prime types (i), (ii), and (iii), but not for (iv). This pattern of results differs from previous findings on languages with alphabetic scripts, which found reliable masked priming effects for morphologically related prime/target pairs of type (i), but not for non-affixal and semantically-related primes of types (ii), and (iii). In Experiment 2, we measured priming effects for prime/target pairs which are neither morphologically, semantically, phonologically nor - as presented in their moraic scripts-orthographically related, but which-in their commonly written form-share the same kanji, which are logograms adopted from Chinese. The results showed a significant priming effect, with faster lexical-decision times for kanji-related prime/target pairs relative to unrelated ones. We conclude that affix-stripping is insufficient to account for masked morphological priming effects across languages, but that language-particular properties (in the case of Japanese, the writing system) affect the processing of (morphologically) complex words. PMID:27065895

  19. Variable priming of a docked synaptic vesicle

    PubMed Central

    Jung, Jae Hoon; Szule, Joseph A.; Marshall, Robert M.; McMahan, Uel J.

    2016-01-01

    The priming of a docked synaptic vesicle determines the probability of its membrane (VM) fusing with the presynaptic membrane (PM) when a nerve impulse arrives. To gain insight into the nature of priming, we searched by electron tomography for structural relationships correlated with fusion probability at active zones of axon terminals at frog neuromuscular junctions. For terminals fixed at rest, the contact area between the VM of docked vesicles and PM varied >10-fold with a normal distribution. There was no merging of the membranes. For terminals fixed during repetitive evoked synaptic transmission, the normal distribution of contact areas was shifted to the left, due in part to a decreased number of large contact areas, and there was a subpopulation of large contact areas where the membranes were hemifused, an intermediate preceding complete fusion. Thus, fusion probability of a docked vesicle is related to the extent of its VM–PM contact area. For terminals fixed 1 h after activity, the distribution of contact areas recovered to that at rest, indicating the extent of a VM–PM contact area is dynamic and in equilibrium. The extent of VM–PM contact areas in resting terminals correlated with eccentricity in vesicle shape caused by force toward the PM and with shortness of active zone material macromolecules linking vesicles to PM components, some thought to include Ca2+ channels. We propose that priming is a variable continuum of events imposing variable fusion probability on each vesicle and is regulated by force-generating shortening of active zone material macromolecules in dynamic equilibrium. PMID:26858418

  20. Barrier heights of GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Kampen, Thorsten U.; Mönch, Winfried

    1997-06-01

    Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of barrier heights along the interfaces. The barrier heights of ideal Schottky contacts depend on the applied voltage due to the image-force lowering only and their ideally factors nif are approximately 1.01. By extrapolation of our experimental data to n = 1.01, we obtain barrier heights of 0.82 eV and 0.73 eV for uniform Ag- and Pb/n-GaN(0001) contacts, respectively. By applying the idea of metal-induced gap states (MIGS), the barrier heights of ideal Schottky contacts have been predicted to vary linearly as a function of the difference of the metal and the semiconductor electronegativities. The zero-charge-transfer barrier height and slope parameter are characteristic of the respective semiconductor. The zero-charge-transfer barrier heights have been calculated using an empirical tight-binding approach and the slope parameters are given by the optical dielectric constants. The experimental barrier heights of GaN Schottky contacts confirm the predictions of the MIGS-and-electronegativity model.

  1. Radiation Characterization of Commercial GaN Devices

    NASA Technical Reports Server (NTRS)

    Harris, Richard D.; Scheick, Leif Z.; Hoffman, James P.; Thrivikraman, Tushar; Jenabi, Masud; Gim, Yonggyu; Miyahira, Tetsuo

    2011-01-01

    Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

  2. Intermediate Nucleation State of GaN Growth

    NASA Astrophysics Data System (ADS)

    Zheng, L. X.; Xie, M. H.; Tong, S. Y.

    2001-03-01

    Homoexpitaxial nucleation of GaN during molecular-beam epitaxy is followed by scanning tunneling microcopy (STM). We observe a metastable nucleation state, which manifests as “ghost” islands in STM images. These “ghost” islands can be irreversibly driven into normal islands by continuous STM imaging. It is further established that the “ghost” island formation is related to the presence of excess Ga atoms on the surface: Normal islands are only seen under the N-rich or stoichiometric flux condition, whereas “ghost” islands are observed under Ga-rich conditions. For intermediate excess-Ga coverages, both normal and “ghost” islands are present, however, they show distinctly different sizes, suggesting different nucleation states for the two. A growth model is proposed to account for the formation of metastable, “ghost” islands. Kinetic Monte Carlo simulation is carried out and main features of the surface are reproduced. We acknowledge financial support from HK RGC under grant Nos. 7396/00P, 7142/99P, and 7121/00P.

  3. Fabrication of high-quality \\{11\\bar{2}2\\} GaN substrates using the Na flux method

    NASA Astrophysics Data System (ADS)

    Maruyama, Mihoko; Nakamura, Koshi; Che, Songbek; Murakami, Kosuke; Takazawa, Hideo; Imanishi, Masayuki; Imade, Mamoru; Morita, Yukihiro; Mori, Yusuke

    2016-05-01

    Gallium nitride (GaN) substrates fabricated along the nonpolar and semipolar directions are the most promising materials for realizing optical and electronic devices with low power consumption. In this study, we carry out the Na flux growth on \\{ 11\\bar{2}2\\} -plane GaN templates grown heteroepitaxially on sapphires. The GaN crystals are grown at low supersaturation using the Na flux method with the dipping technique. The crystallinity of the grown GaN crystals is improved compared to that of the seed substrates. Then it improves further by lowering the supersaturation. Finally, we succeed in fabricating a 2-in. \\{ 11\\bar{2}2\\} -plane GaN single crystal with high transparency and crystallinity.

  4. Enhanced water splitting stability with controlled NiO co-catalyst on GaN photoanode.

    PubMed

    Kim, Soo Hee; Kang, Jin-Ho; Ryu, Sang-Wan

    2014-10-01

    Arrayed NiO co-catalyst on GaN is proposed to improve water splitting efficiency and to obtain stable photoelectrolysis without dissolution of photoanode. The characteristics of photoanodes were investigated by changing the height of NiO on n-GaN. The photoanode stability and performance of GaN with NiO was significantly improved compared to the reference GaN at zero bias. SEM measurements showed negligible etching of NiO and GaN surfaces, which confirmed considerably improved stability compared to the reference n-GaN. In summary, enhanced water splitting efficiency and photoanode stability were achieved by combining GaN with NiO co-catalyst which are advantageous for water splitting applications.

  5. The Original Apollo 13 Prime Crew

    NASA Technical Reports Server (NTRS)

    1969-01-01

    The original Apollo 13 prime crew. From left to right are: Commander, James A. Lovell, Command Module pilot, Thomas K. Mattingly and Lunar Module pilot, Fred W. Haise. On the table in front of them are from left to right, a model of a sextant, the Apollo 13 insignia, and a model of an astrolabe. The sextant and astrolabe are two ancient forms of navigation. Command Module pilot Thomas 'Ken' Mattingly was exposed to German measles prior to his mission and was replaced by his backup, Command Module pilot, John L.'Jack' Swigert Jr.

  6. Palomar Prime-Focus Infrared Camera (PFIRCAM)

    NASA Astrophysics Data System (ADS)

    Jarrett, T. H.; Beichman, C. A.; van Buren, D.; Gautier, N.; Jorquera, C.; Bruce, C.

    1994-03-01

    In a joint effort between engineers and scientists at the Jet Propulsion Laboratory and the California Institute of Technology, a near-infrared (0.8 - 2.6 micrometers) direct imaging system has been developed and integrated into the Caltech Palomar Observatory detector series. The camera system has been tested and operated in a science mode at the prime-focus (f/3.3) of the Hale 5-m Telescope. This paper outlines the system components and performance, including discussion of the detector linearity.

  7. Ant navigation: priming of visual route memories.

    PubMed

    Harris, Robert A; Hempel de Ibarra, Natalie; Graham, Paul; Collett, Thomas S

    2005-11-17

    Ants travelling to and fro between their nest and a foraging area may follow stereotyped foodward and homeward routes that are guided by different visual and directional memory sequences. Honeybees are known to fly a feeder-to-hive or hive-to-feeder vector according to whether or not they have recently fed--their feeding state controls which compass direction they select. We show here that the feeding state of the wood ant Formica rufa also determines the choice between an outward or inward journey, but by priming the selective retrieval of visual landmark memories.

  8. Shedding light on insight: Priming bright ideas

    PubMed Central

    Slepian, Michael L.; Weisbuch, Max; Rutchick, Abraham M.; Newman, Leonard S.; Ambady, Nalini

    2010-01-01

    Previous research has characterized insight as the product of internal processes, and has thus investigated the cognitive and motivational processes that immediately precede it. In this research, however, we investigate whether insight can be catalyzed by a cultural artifact, an external object imbued with learned meaning. Specifically, we exposed participants to an illuminating lightbulb – an iconic image of insight – prior to or during insight problem-solving. Across four studies, exposing participants to an illuminating lightbulb primed concepts associated with achieving an insight, and enhanced insight problem-solving in three different domains (spatial, verbal, and mathematical), but did not enhance general (non-insight) problem-solving. PMID:20652087

  9. Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tadatomo, Kazuyuki; Okada, Narihito

    2011-03-01

    The light-emitting diodes (LEDs) with high external quantum efficiency (EQE) are usually fabricated on the patterned sapphire substrate (PSS). The PSS reduces the dislocation density in the GaN layer and enhances the light extraction efficiency (LEE) from the LED chip by scattering the light confined in GaN layer attributed to the critical angle between GaN (n=2.4) and sapphire substrate (n=1.7) (or air (n=1.0)). On the other hand, non-polar GaN and semipolar GaN are attracted much attention to eliminate the quantum confined Stark effect (QCSE). Recently, we have developed novel technology to grow non-polar or semi-polar GaN on the PSS with high quality and large diameter by metal-organic vapor phase epitaxy (MOVPE). For example, m-plane GaN grown on a-plane PSS and {112 (see manuscript)} plane GaN grown on r-plane PSS. The growth of c-plane GaN from the c-plane-like sidewall of the r-plane PSS results in {112 (see manuscript)} GaN on the r-plane PSS. The full widths at half maximum of X-ray rocking curves (FWHM-XRC) of the {112(see manuscript)} GaN along the azimuths parallel and perpendicular to the c-direction were 533 and 260 arcsec, respectively. Dislocation density of the GaN was approximately 2×108 cm-2. These non-polar and semi-polar GaN are expected to be suitable for novel GaN substrate or GaN template for LEDs.

  10. Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures

    NASA Astrophysics Data System (ADS)

    Kizilyalli, I. C.; Aktas, O.

    2015-12-01

    There is great interest in wide-bandgap semiconductor devices and most recently in vertical GaN structures for power electronic applications such as power supplies, solar inverters and motor drives. In this paper the temperature-dependent electrical behavior of vertical GaN p-n diodes and vertical junction field-effect transistors fabricated on bulk GaN substrates of low defect density (104 to 106 cm-2) is described. Homoepitaxial MOCVD growth of GaN on its native substrate and the ability to control the doping in the drift layers in GaN have allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 μm and net carrier electron concentrations as low as 1 × 1015 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 1.2 kV to 5 kV. Mg, which is used as a p-type dopant in GaN, is a relatively deep acceptor (E A ≈ 0.18 eV) and susceptible to freeze-out at temperatures below 200 K. The loss of holes in p-GaN has a deleterious effect on p-n junction behavior, p-GaN contacts and channel control in junction field-effect transistors at temperatures below 200 K. Impact ionization-based avalanche breakdown (BV > 1200 V) in GaN p-n junctions is characterized between 77 K and 423 K for the first time. At higher temperatures the p-n junction breakdown voltage improves due to increased phonon scattering. A positive temperature coefficient in the breakdown voltage is demonstrated down to 77 K; however, the device breakdown characteristics are not as abrupt at temperatures below 200 K. On the other hand, contact resistance to p-GaN is reduced dramatically above room temperature, improving the overall device performance in GaN p-n diodes in all cases except where the n-type drift region resistance dominates the total forward resistance. In this case, the electron mobility can be deconvolved and is found to decrease with T -3/2, consistent with a phonon scattering model. Also, normally-on vertical junction

  11. Migration mechanisms and diffusion barriers of carbon and native point defects in GaN

    NASA Astrophysics Data System (ADS)

    Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

    2016-06-01

    Carbon related defects are readily incorporated in GaN due to its abundance during growth both with MBE and MOCVD techniques. Employing first-principles calculations, we compute the migration barriers of carbon interstitials and we discuss possible relevant mechanisms of diffusion in the wurtzite GaN crystal. In addition, we calculate the migration barriers for the diffusion of the native defects of the crystal, i.e., gallium and nitrogen interstitials and vacancies. The minimum energy path and the migration barriers of these defects are obtained using the nudged elastic band method with the climbing image modification. In addition, the dimer method is used to independently determine the results. The results yield a quantitative description of carbon diffusion in GaN allowing for the determination of the most preferable migration paths.

  12. Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.

    PubMed

    Wang, Yongjin; Hu, Fangren; Kanamori, Yoshiaki; Wu, Tong; Hane, Kazuhiro

    2010-03-15

    We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).

  13. A low cost, green method to synthesize GaN nanowires

    PubMed Central

    Zhao, Jun-Wei; Zhang, Yue-Fei; Li, Yong-He; Su, Chao-hua; Song, Xue-Mei; Yan, Hui; Wang, Ru-Zhi

    2015-01-01

    The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice. PMID:26643613

  14. Hole mediated magnetism in Mn-doped GaN nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Xiu-Wen; Li, Jingbo; Chang, Kai; Li, Shu-Shen; Xia, Jian-Bai

    2011-04-01

    The hole-mediated magnetism in Mn-doped GaN nanowires is investigated using the k .p method and the mean-field model. The Curie temperature (TC) as a function of the hole density p can be explained based on the calculated band structure of the nanowires. For low Mn concentration, TC vs. p shows many peaks stem from the peaks of the one-dimensional density of states. When the Mn concentration is increased, TC is enhanced, and the peaks of TC versus p are fully merged by the thermal distribution of the holes in the valence band. It is found that the Curie temperature in Mn-doped GaN wire can be higher than room temperature, in agreement with experiment [Song et al., J. Phys.: Condens. Matter 17, 5073 (2005)]. The ferromagnetism in Mn-doped GaN wire is slightly anisotropic due to the small spin-orbit coupling.

  15. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

    NASA Astrophysics Data System (ADS)

    Lu, Y.; Zhao, B. C.; Zheng, J. X.; Zhang, H. S.; Zheng, X. F.; Ma, X. H.; Hao, Y.; Ma, P. J.

    2016-09-01

    In this paper, a high efficiency C-band gallium nitride (GaN) internally-matched power amplifier (PA) is presented. This amplifier consists of 2-chips of self-developed GaN high-electron mobility transistors (HEMTs) with 16 mm total gate width on SiC substrate. New harmonic manipulation circuits are induced both in the input and output matching networks for high efficiency matching at fundamental and 2nd-harmonic frequency, respectively. The developed amplifier has achieved 72.1% power added efficiency (PAE) with 107.4 W output power at 5 GHz. To the best of our knowledge, this amplifier exhibits the highest PAE in C-band GaN HEMT amplifiers with over 100 W output power. Additionally, 1000 hours' aging test reveals high reliability for practical applications.

  16. Enhance ferromagnetism by stabilizing the cation vacancies in GaN

    NASA Astrophysics Data System (ADS)

    Tang, Zhen-kun; Zhang, Deng-Yu; Tang, Li-Ming; Wang, Ling-Ling; Chen, Ke-Qiu

    2013-06-01

    The magnetic properties related to cation vacancies in GaN are investigated by first-principles calculations. The results show that a neutral Ga-vacancy induces 3 μ B magnetic moment in GaN, but is difficult to form due to the high formation energy. It is found that the Ga-vacancy formation energy can be reduced by adding electrons with uniform compensating positive background charge, by nano-structure engineering, or by co-doping donor-like defects. The Ga-vacancy induced colossal magnetic moment in Gd-doped GaN can be modulated by co-doping the donor like defects. It is suggested that ferromagnetism enhanced by stabilizing the cation vacancies may be applied to other wide band-gap semiconductors as well.

  17. Cubic and hexagonal GaN nanoparticles synthesized at low temperature

    NASA Astrophysics Data System (ADS)

    Qaeed, M. A.; Ibrahim, K.; Saron, K. M. A.; Salhin, A.

    2013-12-01

    This study involves a simple and low cost chemical method for the synthesis of Gallium Nitride (GaN) nanoparticles at low temperature. Structural and optical characterizations were carried out using various techniques in order to investigate the properties of the nanoparticles. The Field-Emission Scanning Electron Microscope (FESEM) images showed that the nanoparticles consist of cubic and hexagonal shapes, indicating crystallized structural quality of the GaN nanoparticles. The average size of the nanoparticles was found to be 51 nm. The X-ray Diffraction (XRD) and Raman analysis further confirmed the hexagonal and cubic phases of GaN nanoparticles. The room temperature photoluminescence deduced h-GaN energy gaps of 2.95, 3.12 and 3.13 eV.

  18. Analysis and modelling of GaN Schottky-based circuits at millimeter wavelengths

    NASA Astrophysics Data System (ADS)

    Pardo, D.; Grajal, J.

    2015-11-01

    This work presents an analysis of the capabilities of GaN Schottky diodes for frequency multipliers and mixers at millimeter wavelengths. By using a Monte Carlo (MC) model of the diode coupled to a harmonic balance technique, the electrical and noise performances of these circuits are investigated. Despite the lower electron mobility of GaN compared to GaAs, multipliers based on GaN Schottky diodes can be competitive in the first stages of multiplier chains, due to the excellent power handling capabilities of this material. The performance of these circuits can be improved by taking advantage of the lateral Schottky diode structures based on AlGaN/GaN HEMT technology.

  19. Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.; Puzyk, M. V.; Papchenko, B. P.

    2016-04-01

    Gallium nitride, grown by hydride vapor phase epitaxy and capped with a thin AlGaN layer, was studied by photoluminescence (PL) methods. The concentration of free electrons in GaN was found from the time-resolved PL data, and the concentrations of point defects were estimated from the steady-state PL measurements. The intensity of PL from GaN decreases moderately after capping it with Si-doped AlGaN, and it decreases dramatically after capping with Mg-doped AlGaN. At the same time, the concentration of free electrons and the concentrations of main radiative defects in GaN are not affected by the AlGaN capping. We demonstrate that PL is a powerful tool for nondestructive characterization of semiconductor layers buried under overlying device structures.

  20. On the phenomenon of large photoluminescence red shift in GaN nanoparticles.

    PubMed

    Slimane, Ahmed Ben; Najar, Adel; Elafandy, Rami; San-Román-Alerigi, Damián P; Anjum, Dalaver; Ng, Tien Khee; Ooi, Boon S

    2013-07-31

    We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications.

  1. Measurement of the electrostatic edge effect in wurtzite GaN nanowires

    SciTech Connect

    Henning, Alex; Rosenwaks, Yossi; Klein, Benjamin; Bertness, Kris A.; Blanchard, Paul T.; Sanford, Norman A.

    2014-11-24

    The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.

  2. Prostate specific antigen detection using AlGaN /GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Kang, B. S.; Wang, H. T.; Lele, T. P.; Tseng, Y.; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-09-01

    Antibody-functionalized Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored to the gate area through the formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when target PSA in a buffer at clinical concentrations was added to the antibody-immobilized surface. The authors could detect a wide range of concentrations from 10pg/mlto1μg/ml. The lowest detectable concentration was two orders of magnitude lower than the cutoff value of PSA measurements for clinical detection of prostate cancer. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN /GaN HEMTs for PSA screening.

  3. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  4. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    NASA Astrophysics Data System (ADS)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-05-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  5. Lattice-matched HfN buffer layers for epitaxy of GaN on Si

    SciTech Connect

    Armitage, Robert; Yang, Qing; Feick, Henning; Gebauer, Joerg; Weber, Eicke R.; Shinkai, Satoko; Sasaki, Katsutaka

    2002-05-08

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using sputter-deposited hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m. Initial results for GaN grown on the (111) surface show a photoluminescence peak width of 17 meV at 11 K, and an asymmetric x-ray rocking curve width of 20 arcmin. Wurtzite GaN on HfN/Si(001) shows reduced structural quality and peculiar low-temperature luminescence features. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  6. A low cost, green method to synthesize GaN nanowires.

    PubMed

    Zhao, Jun-Wei; Zhang, Yue-Fei; Li, Yong-He; Su, Chao-hua; Song, Xue-Mei; Yan, Hui; Wang, Ru-Zhi

    2015-01-01

    The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, with a maximum diameter about 140 nm. The morphology and quantity of the nanowires can be modulated by the growth substrate and process parameters. In addition, the photoluminescence and field emission properties of the prepared GaN nanowires have been investigated, which were found to be largely affected by their structures. This work renders an environmentally benign strategy and a facile approach for controllable structures on nanodevice. PMID:26643613

  7. Self-induced growth of vertical GaN nanowires on silica

    NASA Astrophysics Data System (ADS)

    Kumaresan, V.; Largeau, L.; Oehler, F.; Zhang, H.; Mauguin, O.; Glas, F.; Gogneau, N.; Tchernycheva, M.; Harmand, J.-C.

    2016-04-01

    We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.

  8. Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering

    SciTech Connect

    Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S.

    2012-06-05

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

  9. Surface antireflection properties of GaN nanostructures with various effective refractive index profiles.

    PubMed

    Han, Lu; Zhao, Hongping

    2014-12-29

    GaN nanostructures with various effective refractive index profiles (Linear, Cubic, and Quintic functions) were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics by using three-dimensional finite difference time domain (3D-FDTD) method. Effective medium theory was used to design the surface structures corresponding to different refractive index profiles. Surface antireflection properties were calculated and analyzed for incident light with wavelength, polarization and angle dependences. The surface antireflection properties of GaN nanostructures based on six-sided pyramid with both uniform and non-uniform patterns were also investigated. Results indicate a significant dependence of the surface antireflection on the refractive index profiles of surface nanostructures as well as their pattern uniformity. The GaN nanostructures with linear refractive index profile show the best performance to be used as broadband omnidirectional antireflection structures.

  10. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  11. Room-Temperature Transport of Indirect Excitons in (Al ,Ga )N /GaN Quantum Wells

    NASA Astrophysics Data System (ADS)

    Fedichkin, F.; Guillet, T.; Valvin, P.; Jouault, B.; Brimont, C.; Bretagnon, T.; Lahourcade, L.; Grandjean, N.; Lefebvre, P.; Vladimirova, M.

    2016-07-01

    We report on the exciton propagation in polar (Al ,Ga )N /GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.

  12. Lithographically defined carbon growth templates for ELOG of GaN

    NASA Astrophysics Data System (ADS)

    Burckel, D. B.; Fan, Hongyou; Thaler, G.; Koleske, D. D.

    2008-06-01

    We report the initial use of lithographically defined carbon growth templates for use as an epitaxial lateral overgrowth (ELOG) mask for metalorganic chemical vapor deposition (MOCVD) heteroepitaxial GaN on sapphire. Interferometric lithography is used to define high aspect ratio structures in SU-8, which are then pyrolyzed in a reducing atmosphere up to 1200 °C. The resist structures convert to amorphous carbon, shrinking 80% in the vertical direction and 53% in the horizontal direction, but maintain their pattern geometry and adhesion to the substrate. These templates are capable of surviving GaN nucleation layer growth temperatures (˜530 °C), GaN crystal growth and high-temperature annealing up to 1050 °C. This new approach to ELOG offers several advantages, requiring fewer processing steps, and favorable selectivity tendencies as well as the capability to create growth masks which are difficult or impossible to fabricate using a top-down etching approach.

  13. Atomic layer deposition of epitaxial ZnO on GaN and YSZ

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Wei; Ke, Dong-Jie; Chao, Yen-Cheng; Chang, Li; Liang, Mei-Hui; Ho, Yen-Teng

    2007-01-01

    ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ.

  14. Global analysis of GaN growth using a solution technique

    NASA Astrophysics Data System (ADS)

    Kashiwagi, D.; Gejo, R.; Kangawa, Y.; Liu, L.; Kawamura, F.; Mori, Y.; Sasaki, T.; Kakimoto, K.

    2008-04-01

    The solution growth technique is one of the key methods for fabricating gallium nitride (GaN) wafers with small dislocation density. Since the growth rate of GaN using the solution technique is small, the key issue of the technique is to enhance the growth rate of the crystal. We studied how nitrogen is transferred from the surface of the flux to the interface between the top of the flux and the crystal in a muffle furnace using a global model that includes radiative, convective and conductive heat and mass transfer, including nitrogen transfer. The average growth rate of GaN increased when the temperature difference between the furnace wall and a crucible wall became large. This phenomenon is based on mixing of the flux due to natural convection.

  15. Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto

    2010-10-01

    Nucleus and spiral growth mechanisms of GaN were experimentally studied by varying the degree of supersaturation, σ, in selective-area metal organic vapor phase epitaxy. The spiral growth rate of GaN increased proportionally to σ2 in the σ range from 0.0632 to 0.230. The nucleus growth rate of GaN was much smaller than the spiral one in the σ range. The nucleation rate was almost zero at σ lower than 0.130, suddenly increased at higher σ values, and reached ˜107 cm-2 s-1 at σ of 0.230. These results are consistent with a theoretical analysis [W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951)].

  16. Identity Priming Consistently Affects Perceptual Fluency but Only Affects Metamemory When Primes Are Obvious

    ERIC Educational Resources Information Center

    Susser, Jonathan A.; Jin, Andy; Mulligan, Neil W.

    2016-01-01

    Perceptual fluency manipulations influence metamemory judgments, with more fluently perceived information judged as more memorable. However, it is not always clear whether this influence is driven by actual experienced processing fluency or by beliefs about memory. The current study used an identity-priming paradigm--in which words are preceded by…

  17. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

    PubMed Central

    2012-01-01

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV. PMID:23046910

  18. Semantic transparency and masked morphological priming: An ERP investigation

    PubMed Central

    Morris, Joanna; Frank, Tiffany; Grainger, Jonathan; Holcomb, Phillip J.

    2009-01-01

    The role of semantics in the segmentation of morphologically complex words was examined using event-related potentials (ERPs) recorded to target words primed by semantically transparent (hunter–hunt,) opaque (corner–corn), and orthographically related (scandal–scan) masked primes. Behavioral data showed that only transparent items gave rise to priming. The ERP data showed both N250 and the N400 effects with transparent items generating greater priming than orthographic or opaque. Furthermore, priming effects across conditions revealed the existence of a significant linear trend, with transparent items showing the greatest effects and orthographic items the smallest, suggesting that these priming effects vary as a function of morphological structure and semantic transparency. The results are discussed in terms of a model of morphological processing. PMID:17498223

  19. Numerical Priming Between Touch and Vision Depends on Tactile Discrimination.

    PubMed

    Faivre, Nathan; Salomon, Roy; Vuillaume, Laurène; Blanke, Olaf

    2016-01-01

    Although the interaction between vision and touch is of crucial importance for perceptual and bodily self-consciousness, only little is known regarding the link between conscious access and tactile processing. Here, we tested whether the numerical encoding of tactile stimuli depends on conscious discrimination. On each trial, participants received between zero and three taps at low, medium, or high intensity and had to enumerate the number of visual items subsequently presented as a visual target. We measured tactovisual numerical priming, that is, the modulation of reaction times according to the numerical distance between the visual target and tactile prime values. While numerical priming and repetition priming were respectively elicited by high and medium intensity stimuli, no effect was found for low intensity stimuli that were not discriminable. This suggests that numerical priming between touch and vision depends on tactile discrimination. We discuss our results considering recent advances in unconscious visual numerical priming.

  20. Word-identification priming for ignored and attended words

    NASA Technical Reports Server (NTRS)

    Stone, M.; Ladd, S. L.; Vaidya, C. J.; Gabrieli, J. D.

    1998-01-01

    Three experiments examined contributions of study phase awareness of word identity to subsequent word-identification priming by manipulating visual attention to words at study. In Experiment 1, word-identification priming was reduced for ignored relative to attended words, even though ignored words were identified sufficiently to produce negative priming in the study phase. Word-identification priming was also reduced after color naming relative to emotional valence rating (Experiment 2) or word reading (Experiment 3), even though an effect of emotional valence upon color naming (Experiment 2) indicated that words were identified at study. Thus, word-identification priming was reduced even when word identification occurred at study. Word-identification priming may depend on awareness of word identity at the time of study.

  1. Syntactic Priming During Sentence Comprehension: Evidence for the Lexical Boost

    PubMed Central

    Traxler, Matthew J.; Tooley, Kristen M.; Pickering, Martin J.

    2014-01-01

    Syntactic priming occurs when structural information from one sentence influences processing of a subsequently encountered sentence (Bock, 1986; Ledoux et al., 2007). This article reports two eye-tracking experiments investigating the effects of a prime sentence on the processing of a target sentence that shared aspects of syntactic form. The experiments were designed to determine the degree to which lexical overlap between prime and target sentences produced larger effects, comparable to the widely observed ‘lexical boost’ in production experiments (Pickering & Branigan, 1998; Pickering & Ferreira, 2008). The current experiments showed that priming effects during on-line comprehension were in fact larger when a verb was repeated across the prime and target sentences (see also Tooley et al., 2009). The finding of larger priming effects with lexical repetition supports accounts under which syntactic form representations are connected to individual lexical items (e.g., Vosse & Kempen, 2000, 2009; Tomasello, 2003). PMID:24707789

  2. Syntactic priming during sentence comprehension: evidence for the lexical boost.

    PubMed

    Traxler, Matthew J; Tooley, Kristen M; Pickering, Martin J

    2014-07-01

    Syntactic priming occurs when structural information from one sentence influences processing of a subsequently encountered sentence (Bock, 1986; Ledoux et al., 2007). This article reports 2 eye-tracking experiments investigating the effects of a prime sentence on the processing of a target sentence that shared aspects of syntactic form. The experiments were designed to determine the degree to which lexical overlap between prime and target sentences produced larger effects, comparable to the widely observed "lexical boost" in production experiments (Pickering & Branigan, 1998; Pickering & Ferreira, 2008). The current experiments showed that priming effects during online comprehension were in fact larger when a verb was repeated across the prime and target sentences (see also Tooley et al., 2009). The finding of larger priming effects with lexical repetition supports accounts under which syntactic form representations are connected to individual lexical items (e.g., Tomasello, 2003; Vosse & Kempen, 2000, 2009).

  3. Word order priming in written and spoken sentence production.

    PubMed

    Hartsuiker, R J; Westenberg, C

    2000-05-15

    An experiment is reported that showed priming of the word order of auxiliary verb and past participle in Dutch subordinate clauses, both in speaking and in writing. Participants completed sentence fragments to full sentences. Prime sentence fragments were constrained so as to be completed with only one possible word order. Target sentence fragments, presented immediately after the prime fragments, could be completed with the same word order as that of the prime and an alternative order with the two words exchanged. Significant priming effects were obtained, so that the same word orders tended to be used in prime and target. We interpret this as evidence for a distinct process of constituent structure linearization during sentence production, which serves to ensure the fluency of speech and writing.

  4. Vacuum Fluctuations, Cosmogenesis and Prime Number Gaps

    NASA Astrophysics Data System (ADS)

    Berezin, Alexander A.

    2002-10-01

    Starting from E.Tryon (1973), idea of cosmogenesis through quantum tunnelling "from nothing" became popular. Both complimentary streams of it, inflationary models (Guth, Linde) and quantum parallelism (Everett, Deutsch), require some starting point as, e.g., concretisation of Leibnitz Principle (Omnibus ex nihil decendis sufficit unum). This leads to propositional conjecture (axiom?) that (meta)physical "Platonic Pressure" of infinitude of numbers and Cantor "alephs" becomes an engine for self-generation of physical universe directly out of mathematics: inexhaustibility of Number Theory (NT) drives cosmogenesis. While physics in other quantum branches of inflating universe (Megaverse) can be (arbitrary) different from ours, NT is not (it is unique, absolute, immutable and infinitely resourceful). Energy-time uncertainty principle (UP) allows indefinite lifetime provided we start from total zero energy. Analogue of UP in NT is theorem by H.Maier (1981) stating the existence of arbitrary long trails of isolated primes such that each next gap is arbitrary greater than average gap (logN). On physical level these arbitrary large deviations from Prime Number Theorem translate into permissiveness of (arbitrary) large quantum fluctuations.

  5. Diuretics Prime Plant Immunity in Arabidopsis thaliana

    PubMed Central

    Noutoshi, Yoshiteru; Ikeda, Mika; Shirasu, Ken

    2012-01-01

    Plant activators are agrochemicals that activate the plant immune system, thereby enhancing disease resistance. Due to their prophylactic and durable effects on a wide spectrum of diseases, plant activators can provide synergistic crop protection when used in combination with traditional pest controls. Although plant activators have achieved great success in wet-rice farming practices in Asia, their use is still limited. To isolate novel plant activators applicable to other crops, we screened a chemical library using a method that can selectively identify immune-priming compounds. Here, we report the isolation and characterization of three diuretics, bumetanide, bendroflumethiazide and clopamide, as immune-priming compounds. These drugs upregulate the immunity-related cell death of Arabidopsis suspension-cultured cells induced with an avirulent strain of Pseudomonas syringae pv. tomato in a concentration-dependent manner. The application of these compounds to Arabidopsis plants confers disease resistance to not only the avirulent but also a virulent strain of the pathogen. Unlike salicylic acid, an endogenous phytohormone that governs disease resistance in response to biotrophic pathogens, the three diuretic compounds analyzed here do not induce PR1 or inhibit plant growth, showing potential as lead compounds in a practical application. PMID:23144763

  6. Syntactic priming in spoken sentence production - an online study.

    PubMed

    Smith, M; Wheeldon, L

    2001-02-01

    Six experiments investigate syntactic priming online via a picture description task in which participants produce target sentences whose initial phrase is syntactically similar or dissimilar to that of the prime sentence produced on the previous trial. In the first experiment it is shown that a syntactically related prime sentence speeds onset latencies to a subsequent target sentence by approximately 50 ms relative to a syntactically unrelated prime sentence. In the second experiment, the cost of the process of lemma access is factored out via a picture previewing technique but a priming effect is still obtained demonstrating that the effect is not a product of the priming of lemma access processes. In Experiment 3, the related and unrelated prime trials feature the same picture display but the 50 ms facilitation effect is still observed indicating that the effect does not result from the priming of visual perception of the picture movements. This is further strengthened in Experiment 4 which uses written prime sentences rather than a picture description task on the prime trial and still obtains a facilitation effect. In Experiment 5, the effect disappears when the participants are instructed to name the movements but not the objects depicted in the array and this is interpreted as evidence against the view that the effect results from the conceptualization of the events depicted by the array. In the final experiment, the scope of the syntactic persistence effect is investigated by priming sentences with initial phrases of varying syntactic complexity. Significant priming is only observed for an initial phrase featuring two nouns - a finding consistent with the view that the syntactic persistence effect applies only to the generation of the first phrase of an utterance prior to speech onset. The implications of these results are analyzed in the final discussion section.

  7. Simulation of optimum parameters for GaN MSM UV photodetector

    NASA Astrophysics Data System (ADS)

    Alhelfi, Mohanad A.; Ahmed, Naser M.; Hashim, M. R.; Al-Rawi, Ali Amer; Hassan, Z.

    2016-07-01

    In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

  8. Lattice location of deuterium in plasma and gas charged Mg doped GaN

    SciTech Connect

    Wampler, W.R.; Barbour, J.C.; Seager, C.H.; Myers, S.M. Jr.; Wright, A.F.; Han, J.

    1999-12-02

    The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Computer simulations of channeling yields were used to compare results of channeling measurements with calculated yields for various predicted deuterium lattice configurations.

  9. Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes.

    PubMed

    Park, Young S; Lee, Geunsik; Holmes, Mark J; Chan, Christopher C S; Reid, Benjamin P L; Alexander-Webber, Jack A; Nicholas, Robin J; Taylor, Robert A; Kim, Kwang S; Han, Sang W; Yang, Woochul; Jo, Y; Kim, J; Im, Hyunsik

    2015-07-01

    We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. The excitonic emission is observed to redshift by ∼100 meV with respect to that of bulk GaN. We find that the conduction band edge is mainly dominated by surface atoms, and that a larger number of surface atoms for the tube is likely to increase the bandwidth, thus reducing the optical bandgap. The experimental findings can have important impacts in the understanding of the role of surfaces in nanostructured semiconductors with an enhanced surface/volume ratio.

  10. Eliminating stacking faults in semi-polar GaN by AlN interlayers

    SciTech Connect

    Dadgar, A.; Ravash, R.; Veit, P.; Schmidt, G.; Mueller, M.; Dempewolf, A.; Bertram, F.; Wieneke, M.; Christen, J.; Krost, A.

    2011-07-11

    We report on the elimination of stacking faults by the insertion of low-temperature AlN interlayers in nearly (1016) and (1104) oriented semi-polar GaN grown by metalorganic vapor phase epitaxy on Si(112) and Si(113), respectively. The elimination of these defects is visualized by cathodoluminescence (CL) as well as scanning transmission electron microscopy (STEM) and STEM-CL. A possible annihilation mechanism is discussed which leads to the conclusion that the elimination mechanism is most likely valid for all layers with (1101) surfaces, enabling heteroepitaxial semi- and non-polar GaN free from stacking faults.

  11. Simulations of Operation Dynamics of Different Type GaN Particle Sensors

    PubMed Central

    Gaubas, Eugenijus; Ceponis, Tomas; Kalesinskas, Vidas; Pavlov, Jevgenij; Vysniauskas, Juozas

    2015-01-01

    The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material. PMID:25751080

  12. Germanium-catalyzed growth of single-crystal GaN nanowires

    NASA Astrophysics Data System (ADS)

    Saleem, Umar; Wang, Hong; Peyrot, David; Olivier, Aurélien; Zhang, Jun; Coquet, Philippe; Ng, Serene Lay Geok

    2016-04-01

    We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor-Liquid-Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.

  13. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi; Hsieh, Chia-Ho; Shih, Cheng-Hung; Chou, Mitch M. C.; Chen, Wen-Yen; Hsu, Tzu-Min; Hsu, Gary Z. L.

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  14. X-ray detectors based on GaN Schottky diodes

    SciTech Connect

    Duboz, Jean-Yves; Frayssinet, Eric; Chenot, Sebastien; Reverchon, Jean-Luc; Idir, Mourad

    2010-10-18

    GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its temporal dynamics as a function of the bias allows to identify a photovoltaic behavior at low bias and a photoconductive one at larger reverse biases. The GaN diode turned out to be linear as a function of the incident power. The noise and detectivity are given and discussed.

  15. Microstructural evolution in H ion induced splitting of freestanding GaN

    SciTech Connect

    Moutanabbir, O.; Scholz, R.; Senz, S.; Goesele, U.; Chicoine, M.; Schiettekatte, F.; Suesskraut, F.; Krause-Rehberg, R.

    2008-07-21

    We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.

  16. Nucleation and Growth of GaN on GaAs (001) Substrates

    SciTech Connect

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  17. Temperature dependence of the electron Landé g-factor in cubic GaN

    NASA Astrophysics Data System (ADS)

    Buß, J. H.; Schupp, T.; As, D. J.; Hägele, D.; Rudolph, J.

    2015-12-01

    The temperature dependence of the electron Landé g-factor in bulk cubic GaN is investigated over an extremely broad temperature range from 15 K up to 500 K by time-resolved Kerr-rotation spectroscopy. The g-factor is found to be approximately constant over the full investigated temperature range. Calculations by k .p -theory predict a negligible temperature dependence g(T) in complete agreement with the experiment as a consequence of the large band-gap and small spin orbit splitting in cubic GaN.

  18. Investigation of structural and optical properties of GaN on flat and porous silicon

    NASA Astrophysics Data System (ADS)

    Abud, Saleh H.; Selman, Abbas M.; Hassan, Z.

    2016-09-01

    In this work, gallium nitride (GaN) layers were successfully grown on Flat-Si and porous silicon (PSi) using a radio frequency-magnetron sputtering system. Field emission scanning electron microscopy and atomic force microscopy images showed that the grown film on Flat-Si had smoother surface, even though there were some cracks on it. Furthermore, the X-ray diffraction measurements showed that the peak intensity of all the grown layers on PSi was higher than that of the grown layer on Flat-Si. Our detailed observation showed that PSi is a promising substrate to obtain GaN films.

  19. Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

    NASA Astrophysics Data System (ADS)

    Semenenko, M.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D.

    2011-01-01

    Argon plasma etched GaN field-emitter rods with nanometer-scale diameter were fabricated on GaN grown on an n+-GaN substrate. Their electron field emission properties were investigated both without and under illumination by using light sources with various wavelengths. The Fowler-Nordheim current-voltage characteristics of the cathodes show a change in slope for illuminated cathodes. The electron affinity difference ΔE between the different valleys in the conduction band has been ascertained and is in the range from 1.18 up to 1.21 eV.

  20. Modeling of radiation damage recovery in particle detectors based on GaN

    NASA Astrophysics Data System (ADS)

    Gaubas, E.; Ceponis, T.; Pavlov, J.

    2015-12-01

    The pulsed characteristics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the commercial software package Synopsys TCAD Sentaurus. The bipolar drift regime has been analyzed. The possible internal gain in charge collection through carrier multiplication processes determined by impact ionization has been considered in order to compensate carrier lifetime reduction due to radiation defects introduced into GaN material of detector.