Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

NASA Astrophysics Data System (ADS)

Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

2018-05-01

Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ < 0.08) and leakage current (J ∼ 4.6 ×10-5 A/cm2), a high recoverable energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

Preparation and evaluation of Mn3GaN1-x thin films with controlled N compositions

NASA Astrophysics Data System (ADS)

Ishino, Sunao; So, Jongmin; Goto, Hirotaka; Hajiri, Tetsuya; Asano, Hidefumi

2018-05-01

Thin films of antiperovskite Mn3GaN1-x were grown on MgO (001) substrates by reactive magnetron sputtering, and their structural, magnetic, and magneto-optical properties were systematically investigated. It was found that the combination of the deposition rate and the N2 gas partial pressure could produce epitaxial films with a wide range of N composition (N-deficiency) and resulting c/a values (0.93 - 1.0). While the films with c/a = 0.992 - 1.0 were antiferromagnetic, the films with c/a = 0.93 - 0.989 showed perpendicular magnetic anisotropy (PMA) with the maximum PMA energy up to 1.5×106 erg/cm3. Systematic dependences of the energy spectra of the polar Kerr signals on the c/a ratio were observed, and the Kerr ellipticity was as large as 2.4 deg. at 1.9 eV for perpendicularly magnetized ferromagnetic thin films with c/a = 0.975. These results highlight that the tetragonal distortion plays an important role in magnetic and magneto-optical properties of Mn3GaN1-x thin films.

The effect of nitrogen on the cycling performance in thin-film Si{sub 1-x}N{sub x} anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Donggi; Kim, Chunjoong; Lee, Joon-Gon

2008-09-15

The effects of nitrogen on the electrochemical properties of silicon-nitrogen (Si{sub 1-x}N{sub x}) thin films were examined in terms of their initial capacities and cycling properties. In particular, Si{sub 0.76}N{sub 0.24} thin films showed negligible initial capacity but an abrupt capacity increase to {approx}2300 mA h/g after {approx}650 cycles. The capacity of pure Si thin films was deteriorated to {approx}20% of the initial level after 200 cycles between 0.02 and 1.2 V at 0.5 C (1 C=4200 mA/g), whereas the Si{sub 0.76}N{sub 0.24} thin films exhibited excellent cycle-life performance after {approx}650 cycles. In addition, the Si{sub 0.76}N{sub 0.24} thin filmsmore » at 50 deg. C showed an abrupt capacity increase at an earlier stage of only {approx}30 cycles. The abnormal electrochemical behaviors in the Si{sub 0.76}N{sub 0.24} thin films were demonstrated to be correlated with the formation of Li{sub 3}N and Si{sub 3}N{sub 4}. - Graphical abstract: The Si{sub 0.76}N{sub 0.24} thin films showed negligible initial capacity, but an abrupt capacity increase to {approx}2300 mA h/g after {approx}650 cycles, followed by excellent cycle-life performance. This abnormal electrochemical behavior was demonstrated to be correlated with the formation of Li{sub 3}N and Si{sub 3}N{sub 4}.« less

The investigation of optimal Silicon/Silicon(1-x)Germanium(x) thin-film solar cells with quantitative analysis

NASA Astrophysics Data System (ADS)

Ehsan, Md Amimul

Thin-film solar cells are emerging from the research laboratory to become commercially available devices for low cost electrical power generation applications. Silicon which is a cheap, abundant and non-toxic elemental semiconductor is an attractive candidate for these solar cells. Advanced modeling and simulation of Si thin-film solar cells has been performed to make this technology more cost effective without compromising the performance and efficiency. In this study, we focus on the design and optimization of Si/Si1-xGex heterostructures, and microcrystalline and nanocrystalline Si thin-film solar cells. Layer by layer optimization of these structures was performed by using advanced bandgap engineering followed by numerical analysis for their structural, electrical and optical characterizations. Special care has been introduced for the selection of material layers which can help to improve the light absorption properties of these structures for harvesting the solar spectrum. Various strategies such as the optimization of the doping concentrations, Ge contents in Si1-xGex buffer layer, incorporation of the absorber layers and surface texturing have been in used to improve overall conversion efficiencies of the solar cells. To be more specific, the observed improvement in the conversion efficiency of these solar cells has been calculated by tailoring the thickness of the buffer, absorber, and emitter layers. In brief, an approach relying on the phenomena of improved absorption of the buffer and absorber layer which leads to a corresponding gain in the open circuit voltage and short circuit current is explored. For numerical analysis, a PC1D simulator is employed that uses finite element analysis technique for solving semiconductor transport equations. A comparative study of the Si/Si1-xGex and Ge/Si1-xGex is also performed. We found that due to the higher lattice mismatch of Ge to Si, thin-film solar cells based on Si/Si1-xGex heterostructures performed much

Structural and optical properties of MgxAl1-xHy gradient thin films: a combinatorial approach

NASA Astrophysics Data System (ADS)

Gremaud, R.; Borgschulte, A.; Chacon, C.; van Mechelen, J. L. M.; Schreuders, H.; Züttel, A.; Hjörvarsson, B.; Dam, B.; Griessen, R.

2006-07-01

The structural, optical and dc electrical properties of MgxAl1-x (0.2≤x≤0.9) gradient thin films covered with Pd/Mg are investigated before and after exposure to hydrogen. We use hydrogenography, a novel high-throughput optical technique, to map simultaneously all the hydride forming compositions and the kinetics thereof in the gradient thin film. Metallic Mg in the MgxAl1-x layer undergoes a metal-to-semiconductor transition and MgH2 is formed for all Mg fractions x investigated. The presence of an amorphous Mg-Al phase in the thin film phase diagram enhances strongly the kinetics of hydrogenation. In the Al-rich part of the film, a complex H-induced segregation of MgH2 and Al occurs. This uncommon large-scale segregation is evidenced by metal and hydrogen profiling using Rutherford backscattering spectrometry and resonant nuclear analysis based on the reaction 1H(15N,αγ)12C. Besides MgH2, an additional semiconducting phase is found by electrical conductivity measurements around an atomic [Al]/[Mg] ratio of 2 (x=0.33). This suggests that the film is partially transformed into Mg(AlH4)2 at around this composition.

Structural and magnetic properties of non-stoichiometric Fe1-xO thin films

NASA Astrophysics Data System (ADS)

Muhammed Shameem P., V.; Mekala, Laxman; Kumar, M. Senthil

2018-04-01

The Fe1-xO thin films of various iron deficiencies (x) have been grown at ambient temperature by reactive dc magnetron sputtering technique and their structural and magnetic properties are studied. The structural study shows that the films are polycrystalline. As the iron content (1-x) varies from 0.924 to 0.855 a clear consistent change in the preferential orientation of the grains from [111] to the [200] direction is observed. The magnetization measurements show the possible existence of small superparamagnetic defect clusters at 300 K and large spinel-type defect clusters below the Neel temperature.

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agawane, G.L., E-mail: agawaneganesh@gmail.com; Shin, Seung Wook; Vanalakar, S.A.

2014-07-01

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(Smore » + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.« less

Tuning the Magnetic and Electronic Properties of Iron(x )Silicon(1-x) Thin Films for Spintronics

NASA Astrophysics Data System (ADS)

Karel, Julie Elizabeth

This dissertation investigated the magnetic and electronic properties of a potentially better alternative: off-stoichimetry, bcc-like FexSi 1-x thin films (0.43<x<0.77). Stoichiometric Fe3Si, a Heusler alloy, has already been studied as a potential spin-injector due to a high Curie temperature, well above room temperature (>800 K) and theoretically predicted high spin polarization (100%). However, little work has been done on off-stoichiometry FexSi1-x thin films (0.43<x<0.77), where it may be possible to further enhance the properties, including the spin-polarization. In addition to being a potential spin-injector, the FE xSi1-x system is unique in that thin film growth techniques allow access to varying degrees of both chemical and structural order over a wide composition range. In the crystalline system, three different bcc-like structures (D03, B2, A2), each with a different degree of chemical order, are possible. The A2 structure is a chemically disordered random bcc solid solution, and the B2 structure is a partially ordered CsCl structure with Fe on the cube corner sites and Fe/Si randomly arranged on the body center sites. Finally, the D03 structure is chemically ordered with Fe on the cube corners and Fe and Si alternating in the body centers. Amorphous FexSi1-x thin films can also be fabricated, allowing for a comprehensive and direct comparison of the magnetic properties. This work probed the effects of chemical and structural disorder on the magnetic and electronic properties of FexSi1-x thin films. The magnetism was found to strongly depend on the chemical order for both the crystalline and amorphous structures. The chemically disordered A2 structure has more Fe-Fe pairs than the chemically ordered B2 or D0 3 structures, leading to a larger predicted moment. The magnetic moments for the B2 and D03 structures are not significantly different. They should, in fact, be essentially the same since the first nearest neighbor environments are the same; on

Growth and magnetic properties of multiferroic LaxBi1-xMnO3 thin films

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Wyczisk, F.; Varela, M.; Fontcuberta, J.; Barthélémy, A.

2007-05-01

A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

Field dependent magnetic anisotropy of Fe1-xZnx thin films

NASA Astrophysics Data System (ADS)

Resnick, Damon A.; McClure, A.; Kuster, C. M.; Rugheimer, P.; Idzerda, Y. U.

2013-05-01

Using longitudinal magneto-optical Kerr effect in combination with a variable strength rotating magnetic field, called the Rotational Magneto-Optic Kerr Effect (ROTMOKE) method, we show that the magnetic anisotropy for thin Fe82Zn18 single crystal films, grown on MgO(001) substrates, depends linearly on the strength of the applied magnetic field at low fields but is constant (saturates) at fields greater than 350 Oe. The torque moment curves generated using ROTMOKE are well fit with a model that accounts for the uniaxial and cubic anisotropy with the addition of a cubic anisotropy that depends linearly on the applied magnetic field. The field dependent term is evidence of a large effect on the effective magnetic anisotropy in Fe1-xZnx thin films by the magnetostriction.

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

PubMed Central

Wang, Yi-Guang; Liu, Qiu-Xiang; Jiang, Yan-Ping; Jiang, Li-Li

2017-01-01

Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail. PMID:28885579

Bottom electrodes dependence of microstructures and dielectric properties of compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Tianjin; Wang Jinzhao; Zhang Baishun

2008-03-04

Compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO{sub 2}/Si and Ru/SiO{sub 2}/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO{sub 2} is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. Themore » enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO{sub 2} that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.« less

Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films

NASA Astrophysics Data System (ADS)

Baoshan, Jia; Yunhua, Wang; Lu, Zhou; Duanyuan, Bai; Zhongliang, Qiao; Xin, Gao; Baoxue, Bo

2012-08-01

Amorphous GaAs1-xNx (a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model.

Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

NASA Astrophysics Data System (ADS)

Wang, R.; Huang, Z. X.; Zhao, G. Q.; Yu, S.; Deng, Z.; Jin, C. Q.; Jia, Q. J.; Chen, Y.; Yang, T. Y.; Jiang, X. M.; Cao, L. X.

2017-04-01

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

NASA Astrophysics Data System (ADS)

Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K.

2006-04-01

MgxZn1-xO (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ~4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.

Tailoring of optical band gap by varying Zn content in Cd{sub 1-x}Zn{sub x}S thin films prepared by spray pyrolysis method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vipin, E-mail: vipinkumar28@yahoo.co.in; Sharma, D. K.; Agrawal, Sonalika

Cd{sub 1-X}Zn{sub X}S thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterized by UV-VIS spectrophotometer. The optical band gap of the films has been studied by transmission spectra in wavelength range 325-600nm. It has been observed that optical band gap increases with increasing zinc concentration. The optical band gap of these thin films varies from 2.59 to 3.20eV with increasing Zn content.

Thin Films

NASA Astrophysics Data System (ADS)

Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

2014-11-01

Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

Composition spread studies of Nd1-xLaxNiO3 combinatorial thin films

NASA Astrophysics Data System (ADS)

Suchoski, Richard; Jin, Kui; Yasui, Shintaro; Greene, Richard; Takeuchi, Ichiro

2013-03-01

Rare earth nickelates have attracted a great deal of attention in recent years due to a host of interesting features, one being a transition from paramagnetic metal to antiferromagnetic insulator through distortions from the ideal perovskite unit cell. This metal-to-insulator transition (MIT) can be manipulated by modifying variables such as temperature, rare earth ion size, oxygen content, or stress from lattice-mismatched epitaxial thin film growth. Research on this family has been extensive, though there still exists an absence of thin film studies focusing on intermediate compositions. We have fabricated epitaxial thin film composition spreads of Nd1-xLaxNiO3 grown via combinatorial PLD to investigate these transitional compositions. While our films exhibit a smooth composition progression, we observe a composition threshold where orthorhombic NdNiO3 transforms to rhombohedral LaNiO3, correlating with disappearance of the MIT, and displays a non-Vegard evolution of the film's in-plane lattice constant in HRXRD and Raman scattering data of the A1g rotational mode. This work was performed at the Center for Nanophysics and Advanced Materials (CNAM) at UMD, and supported by AFO SR MURI Grant #FA95500910603.

Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

DOE PAGES

Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; ...

2017-02-13

Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf 1-xZr xO 2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm -2K -1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarizationmore » (x = 0, 0.91, 1).« less

Growth and optoelectronic characteristic of n-Si/p-CuIn(S 1-xSe x) 2 thin-film solar cell by solution growth technique

NASA Astrophysics Data System (ADS)

Chavhan, S.; Sharma, R.

2006-07-01

The p-CuIn(S 1-xSe x) 2 (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 °C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S 1-xSe x) 2 thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S 1-xSe x) 2 ( x=0.5) reveals (1 1 2) orientation peak and exhibits the chalcopyrite structure with lattice constant a=5.28 Å and c=11.45 Å. The J- V characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, V=411.09 mV, and J=14.55 mA. FF=46.55% and η=4.64% under an illumination of 60 mW/cm 2. The J- V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S 0.5Se 0.5) 2 heterojunction thin film.

Low-temperature sequential pulsed chemical vapor deposition of ternary B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N thin film alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haider, Ali, E-mail: ali.haider@bilkent.edu.tr, E-mail: biyikli@unam.bilkent.edu.tr; Kizir, Seda; Ozgit-Akgun, Cagla

In this work, the authors have performed sequential pulsed chemical vapor deposition of ternary B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N alloys at a growth temperature of 450 °C. Triethylboron, triethylgallium, trimethylindium, and N{sub 2} or N{sub 2}/H{sub 2} plasma have been utilized as boron, gallium, indium, and nitrogen precursors, respectively. The authors have studied the compositional dependence of structural, optical, and morphological properties of B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N ternary thin film alloys. Grazing incidence X-ray diffraction measurements showed that boron incorporation in wurtzite lattice of GaN and InN diminishes the crystallinity of B{sub x}Ga{sub 1-x}N and B{submore » x}In{sub 1-x}N sample. Refractive index decreased from 2.24 to 1.65 as the B concentration of B{sub x}Ga{sub 1-x}N increased from 35% to 88%. Similarly, refractive index of B{sub x}In{sub 1-x}N changed from 1.98 to 1.74 for increase in B concentration value from 32% to 87%, respectively. Optical transmission band edge values of the B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N films shifted to lower wavelengths with increasing boron content, indicating the tunability of energy band gap with alloy composition. Atomic force microscopy measurements revealed an increase in surface roughness with boron concentration of B{sub x}Ga{sub 1-x}N, while an opposite trend was observed for B{sub x}In{sub 1-x}N thin films.« less

Characterization of thin films of the solid electrolyte Li(x)Mg(1-2x)Al(2+x)O4 (x = 0, 0.05, 0.15, 0.25).

PubMed

Put, Brecht; Vereecken, Philippe M; Mees, Maarten J; Rosciano, Fabio; Radu, Iuliana P; Stesmans, Andre

2015-11-21

RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

Growth of ternary CdxZn1-xO thin films in oxygen ambient using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Sharma, Sugandha; Saini, Basant; Kaur, Ravinder; Gupta, Vinay; Tomar, Monika; Kapoor, Avinashi

2018-05-01

This study reports the growth of cadmium alloyed zinc (CdxZn1-xO) oxide thin films using pulsed laser deposition. The films are deposited on Corning glass substrates at different oxygen pressures of 5, 20, and 40 mTorr. High resolution X-ray diffraction studies reveal mixed phase (hexagonal and cubic) for films deposited at 20 and 40 mTorr, while a cubic phase for film deposited at 5 mTorr pressure. Optical transmittance studies indicate red-shifting of transmission edge as oxygen pressure decreases to 5 mTorr from 20 mTorr, hinting at a possible increase in cadmium content in thin films. Minimum band gap energy is obtained at growth pressure of 5 mTorr. Resistivity measurements have been performed using Hall effect measurement set up at 298 K.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Electronic and atomic structures of Ti{sub 1-x}Al{sub x}N thin films related to their damage behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuilier, M.-H.; Pac, M.-J.; Girleanu, M.

2008-04-15

Ti and Al K-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti{sub 1-x}Al{sub x}N thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations. The comparison of the structural parameters derived from x-ray absorption fine structure and x-ray diffraction reveals segregation between Al-rich and Ti-rich domains within the Ti{sub 1-x}Al{sub x}N films. Whereas x-ray diffraction probes only the crystallized domains, the structural information derived from extended x-ray absorption fine structure analysis turns on both crystalline and grainmore » boundaries. The results are discussed by considering the damage behavior of the films depending on the composition.« less

Growth and Characterization of Large Scale (Sb1-xBix)2 Te3 Thin Films on Mica

NASA Astrophysics Data System (ADS)

Ni, Yan; Zhang, Zhen; Jiles, David

2015-03-01

Topological insulators (TIs) attract attentions for both fundamental science and potential applications because of their bulk band inversion arising from the strong spin orbital coupling. However, it is necessary to tune the Fermi level and Dirac cone in 3D TI (Sb1-xBix)2 Te3 to make an ideal system for TI applications. In this work, we report high quality (Sb1-xBix)2 Te3 thin films grown on mica substrate by molecular beam epitaxy. The surface roughness of the thin film can reach as low as 0.7 nm in a large area by van der Waals epitaxy. (Sb1-xBix)2 Te3 thin film with x = 0.04 shows a local maxima in the room temperature sheet resistance, which indicates a minimization of the carrier density due to band structure engineering. Moreover, for higher Bi concentration, due to an increase of the surface roughness and corresponding reduction of electron mobility, the sheet resistance increases. Our results on the feasibility of depositing (Sb1-xBix)2 Te3 in wide Bi range on mica substrate will helpful for the application of TI at room temperature and flexible electronics. Authors would like to thank the financial support from the U.S. National Science Foundation under the Award No. 1201883.

Superconducting properties of Ba(Fe1-xNix)2As2 thin films in high magnetic fields

NASA Astrophysics Data System (ADS)

Richter, Stefan; Kurth, Fritz; Iida, Kazumasa; Pervakov, Kirill; Pukenas, Aurimas; Tarantini, Chiara; Jaroszynski, Jan; Hänisch, Jens; Grinenko, Vadim; Skrotzki, Werner; Nielsch, Kornelius; Hühne, Ruben

2017-01-01

We report on the electrical transport properties of epitaxial Ba(Fe1-xNix)2As2 thin films grown by pulsed laser deposition in static magnetic fields up to 35 T. The thin film shows a critical temperature of 17.2 K and a critical current density of 5.7 × 105 A/cm2 in self field at 4.2 K, while the pinning is dominated by elastic pinning at two-dimensional nonmagnetic defects. Compared to the single-crystal data, we find a higher slope of the upper critical field for the thin film at a similar doping level and a small anisotropy. Also, an unusual small vortex liquid phase was observed at low temperatures, which is a striking difference to Co-doped BaFe2As2 thin films.

Bandgap tuning in highly c-axis oriented Zn1-xMgxO thin films

NASA Astrophysics Data System (ADS)

Kumar, Parmod; Malik, Hitendra K.; Ghosh, Anima; Thangavel, R.; Asokan, K.

2013-06-01

We propose Mg doping in zinc oxide (ZnO) films for realizing wider optical bandgap in highly c-axis oriented Zn1-xMgxO (0 ≤ x ≤ 0.3) thin films. A remarkable enhancement of 25% in the bandgap by 30% Mg doping was achieved. The bandgap was tuned between 3.25 eV (ZnO) and 4.06 eV (Zn0.7Mg0.3O), which was further confirmed by density functional theory based wien2k simulation employing a combined generalized gradient approximation with scissor corrections. The change of stress and crystallite size in these films were found to be the causes for the observed blueshift in the bandgap.

Optical properties of PVA capped nanocrystalline Cd1-xZnxS thin film synthesized by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Gogoi, Lipika; Chaliha, Sumbit; Saikia, Prasanta Kumar

2018-04-01

A simple cost effective Chemical Bath Deposition (CBD) technique has been employed for the preparation of nanocrystalline Cd1-xZnxS thin films in an alkaline medium at 333K for 120 minutes in polymer matrix. Optical parameters such as transmittance, optical band gap, reflectance, refractive index and extinction coefficient of the films was made using UV-Visible spectrophotometer. UV-spectroscopy study shows a good transmittance of 80-88% in visible wavelength region for the deposited films. The direct band gap energy (Eg) for the deposited films ranged from 3.5 to 3.7 eV depending on attribution of Zn into CdS. It shows a blue shift with respect to bulk value. A increase in transmittance and band gap is found with the increase of volume of Zn content. Cd1-xZnxS thin films exhibit the least reflectance for all the wavelengths in the visible region. The refractive indices (n) of the Cd1-xZnxS films were found in the range 1.38 to 2.94 in the visible region.

Room temperature ferromagnetism in BiFe1-xMnxO3 thin film induced by spin-structure manipulation

NASA Astrophysics Data System (ADS)

Shigematsu, Kei; Asakura, Takeshi; Yamamoto, Hajime; Shimizu, Keisuke; Katsumata, Marin; Shimizu, Haruki; Sakai, Yuki; Hojo, Hajime; Mibu, Ko; Azuma, Masaki

2018-05-01

The evolution of crystal structure, spin structure, and macroscopic magnetization of manganese-substituted BiFeO3 (BiFe1-xMnxO3), a candidate for multiferroic materials, were investigated on bulk and epitaxial thin-film. Mn substitution for Fe induced collinear antiferromagnetic spin structure around room temperature by destabilizing the cycloidal spin modulation which prohibited the appearance of net magnetization generated by Dzyaloshinskii-Moriya interaction. For the bulk samples, however, no significant signal of ferromagnetism was observed because the direction of the ordered spins was close to parallel to the electric polarization so that spin-canting did not occur. On the contrary, BiFe1-xMnxO3 thin film on SrTiO3 (001) had a collinear spin structure with the spin direction perpendicular to the electric polarization at room temperature, where the appearance of spontaneous magnetization was expected. Indeed, ferromagnetic hysteresis behavior was observed for BiFe0.9Mn0.1O3 thin film.

Structure-property relations in sputter deposited epitaxial (1-x)Pb(Mg1/3Nb2/3)O3- xPbTiO3 thin films

NASA Astrophysics Data System (ADS)

Frederick, Joshua C.

Lead-based ferroelectric materials are of significant technological importance for sensing and actuation due to their high piezoelectric performance (i.e., the ability to convert an electrical signal to mechanical displacement, and vice versa). Traditionally, bulk ceramic or single crystals materials have filled these roles; however, emerging technologies stand to benefit by incorporating thin films to achieve miniaturization while maintaining high efficiency and sensitivity. Currently, chemical systems that have been well characterized in bulk form (e.g. Pb(Mg1/3Nb2/3)O3- xPbTiO3, or PMN-xPT) require further study to optimize both the chemistry and structure for deployment in thin film devices. Furthermore, the effect of internal electric fields is more significant at the length scales of thin films, resulting in self biases that require compensation to reveal their intrinsic dielectric response. To this end, the structure-property relations of epitaxial PMN-xPT films sputter deposited on a variety of substrates were investigated. Attention was paid to how the structure (i.e., strain state, crystal structure, domain configuration, and defects) gave rise to the ferroelectric, dielectric, and piezoelectric response. Three-dimensional visualization of the dielectric response as a simultaneous function of electric field and temperature revealed the true phase transition of the films, which was found to correspond to the strain state and defect concentration. A lead-buffered anneal process was implemented to enhance the ferroelectric and dielectric response of the films without altering their stoichiometry. It was discovered that PMN- xPT films could be domain-engineered to exhibit a mixed domain state through chemistry and substrate choice. Such films exhibited a monoclinic distortion similar to that of the bulk compositions near the morphotropic phase boundary. Finally, it was revealed that the piezoelectric response could be greatly enhanced by declamping the film

Electrodeposition Process and Performance of CuIn(Se x S1- x )2 Film for Absorption Layer of Thin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Li, Libo; Yang, Xueying; Gao, Guanxiong; Wang, Wentao; You, Jun

2017-11-01

CuIn(Se x S1- x )2 thin film is prepared by the electrodeposition method for the absorption layer of the solar cell. The CuIn(Se x S1- x )2 films are characterized by cyclic voltammetry measurement for the reduction of copper, indium, selenium and sulfur in selenium and sulfur in aqueous solutions with sodium citrate and without sodium citrate. In the four cases, the defined reduction process for every single element is obtained and it is observed that sodium citrate changes the reduction potentials. A linear relationship between the current density of the reduction peak and (scan rate v)1/2 for copper and indium is achieved, indicating that the process is diffusion controlled. The diffusion coefficients of copper and indium ions are calculated. The diffusional coefficient D value of copper is higher than that of indium, and this is the reason why the deposition rate of copper is higher. When four elements are co-deposited in the aqueous solution with sodium citrate, the quaternary compound of CuIn(Se x S1- x )2 is deposited together with Cu3Se2 impure phases after annealing, as found by XRD spectra. Morphology is observed by SEM and AFM. The chemical state of the films components is analyzed by XPS. The UV-Visible spectrophotometer and electrochemistry workstation are employed to measure the photoelectric properties. The results show that the smooth, uniform and compact CuIn(Se x S1- x )2 film is a semiconductor with a band gap of 1.49 eV and a photovoltaic conversion efficiency of 0.45%.

Phase change studies in Se85In15-xZnx chalcogenide thin films

NASA Astrophysics Data System (ADS)

Srivastava, Archana; Tiwari, S. N.; Alvi, M. A.; Khan, Shamshad A.

2018-03-01

This research work describes the phase change studies in Se85In15-xZnx thin films at various annealing temperatures. Glassy samples of Se85In15-xZnx were synthesized by the melt quenching method and thin films of thickness 400 nm were prepared by the vacuum evaporation technique on a glass/Si wafer substrate. The glass transition temperature (Tg) and the on-set crystallization temperature (Tc) of the prepared alloys were evaluated by non-isothermal differential scanning calorimetry studies. Thin films were annealed at three temperatures 330 K, 340 K, and 350 K (which are in between Tg and Tc of the synthesized samples) in a vacuum furnace for 2 h. High resolution X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature whereas the annealed films are of crystalline/polycrystalline in nature. Field emission scanning electron microscopy studies of thin films (as-deposited and crystallized) confirm the phase transformation in Se85In15-xZnx thin films. Optical band gaps were calculated from the Tauc's extrapolation procedure and were found to be enhanced with the Zn concentration and decrease with the increasing annealing temperature. Various optical parameters were evaluated for as-prepared and annealed Se85In15-xZnx thin films. The changes in optical parameters with annealing temperature were described on the basis of structural relaxation as well as changes in defect states and density of localized states during amorphous to crystalline phase transformation in Se85In15-xZnx thin films.

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

[Preparation and spectral characterization of CdS(y)Te(1-y) thin films].

PubMed

Li, Wei; Feng, Liang-Huan; Wu, Li-Li; Zhang, Jing-Quan; Li, Bing; Lei, Zhi; Cai, Ya-Ping; Zheng, Jia-Gui; Cai, Wei; Zhang, Dong-Min

2008-03-01

CdS(y)Te(1-y) (0 < or = y < or = 1) polycrystalline thin films were prepared on glass substrates by co-evaporation of powders of CdTe and CdS. For the characterization of the structure and composition of the CdS(y)Te(1-y) thin films the X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) were used. The results indicate that the values of sulfur content y detected and controlled by the quartz wafer detector show good agreement with the EDS results. The films were found to be cubic for x < 0. 3, and hexagonal for x > or = 0.3. The 20-50 nm of grain sizes for CdS(y)Te(1-y) thin films were calculated using a method of XRD analysis. Finally, the optical properties of CdS(y)Te(1-y) thin films were characterized by UV-Vis-NIR spectroscopy alone. According to a method from Swanepoel, together with the first-order Sellmeier model, the thickness, of d-535 nm, energy gap of E(g)-1.41 eV, absorption coefficient, alpha(lambda) and refractive index, n(lambda) of CdS(0.22) Te(0.78) thin films were determined from the transmittance at normal incidence of light in the wavelength range 300-2 500 nm. The results also indicate that the CdS(y)Te(1-y) thin films with any composition (0 < or = y < or = 1) can be prepared by co-evaporation, and the method to characterize the optical properties of CdS(y)Te(1-y) thin films can be implemented for other semiconductor thin films.

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Stabilization of scandium rich spinel ferrite CoFe{sub 2−x}Sc{sub x}O{sub 4} (x≤1) in thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lefevre, Christophe, E-mail: christophe.lefevre@ipcms.unistra.fr; Roulland, François; Thomasson, Alexandre

2015-12-15

Scandium rich cobalt ferrites Co{sub y}Fe{sub 3−x−y}Sc{sub x}O{sub 4} with y~1 never obtained in bulk could be stabilized in pulsed laser deposited thin films. Scandium contents of up to x=1 are reached. The cell parameter increases versus x as awaited when considering the size of scandium. It is equal to 0.8620 nm for x=1, significantly higher than that of CoFe{sub 2}O{sub 4} (0.8396 nm). The lattice mismatch between the MgO (100) substrate and the scandium-containing spinel leads to an increased roughness. Cobalt is displaced from the octahedral site by Sc and mainly occupies the tetrahedral sites for high x values.more » - Graphical abstract: Magnification of the XRD patterns recorded on thin films of CoFe{sub 2-x}Sc{sub x}O{sub 4} for x=0, 0.45, 1 and 1.2, the arrows denote the (004) and (008) diffraction lines of the spinel phase.« less

Lattice instability and elastic response of metastable Mo1-xSix thin films

NASA Astrophysics Data System (ADS)

Fillon, A.; Jaouen, C.; Michel, A.; Abadias, G.; Tromas, C.; Belliard, L.; Perrin, B.; Djemia, Ph.

2013-11-01

We present a detailed experimental study on Mo1-xSix thin films, an archetypal alloy system combining metallic and semiconductor materials. The correlations between structure and elastic response are comprehensively investigated. We focus on assessing trends for understanding the evolution of elastic properties upon Si alloying in relation to the structural state (crystalline vs amorphous), bonding character (metallic vs covalent), and local atomic environment. By combining picosecond ultrasonics and Brillouin light scattering techniques, a complete set of effective elastic constants and mechanical moduli (B, G, E) is provided in the whole compositional range, covering bcc solid solutions (x < 0.20) and the amorphous phase (0.20 < x < 1.0). A softening of the shear and Young moduli and a concomitant decrease of the Debye temperature is revealed for crystalline alloys, with a significant drop being observed at x ˜ 0.2 corresponding to the limit of crystal lattice stability. Amorphous alloys exhibit a more complex elastic response, related to variations in coordination number, atomic volume, and bonding state, depending on Si content. Finally, distinct evolutions of the G/B ratio as a function of Cauchy pressure are reported for crystalline and amorphous alloys, enabling us to identify signatures of ductility vs brittleness in the features of the local atomic environment. This work paves the way to design materials with improved mechanical properties by appropriate chemical substitution or impurity incorporation during thin-film growth.

Smectic C liquid crystal growth through surface orientation by ZnxCd1-xSe thin films

NASA Astrophysics Data System (ADS)

Katranchev, B.; Petrov, M.; Bineva, I.; Levi, Z.; Mineva, M.

2012-12-01

A smectic C liquid crystal (LC) texture, consisting of distinct local single crystals (DLSCs) was grown using predefined orientation of ternary nanocrystalline thin films of ZnxCd1-xSe. The surface morphology and orientation features of the ZnxCd1-xSe films were investigated by AFM measurements and micro-texture polarization analysis. The ZnxCd1-xSe surface causes a substantial enlargement of the smectic C DLSCs and induction of a surface bistable state. The specific character of the morphology of this coating leads to the decrease of the corresponding anchoring energy. Two new chiral states, not typical for this LC were indicated. The physical mechanism providing these new effects is presented.

Investigation of microstructural and electrical properties of composition dependent co-sputtered Hf1-x Ta x O2 thin films

NASA Astrophysics Data System (ADS)

Das, K. C.; Tripathy, N.; Ghosh, S. P.; Mohanta, S. K.; Nakamura, A.; Kar, J. P.

2017-11-01

Tantalum doped HfO2 gate dielectric thin films were deposited on silicon substrates using RF reactive co-sputtering by varying RF power of Ta target from 15 W to 90 W. The morphological, compositional and electrical properties of Hf1-x Ta x O2 films were systematically investigated. The Ta content was found to be increased up to 21% for a Ta target power of 90 W. The evolution of monoclinic phase of Hf1-x Ta x O2 was seen from XRD study upto RF power of 60 W and afterwards, the amorphous like behaviour is appeared. The featureless smooth surface with the decrease in granular morphology has been observed from FESEM micrographs of the doped films at higher RF powers of Ta. The flatband voltage is found to be shifted towards negative voltage in the capacitance-voltage plot, which was attributed to the enhancement in positive oxide charge density with rise in RF power. The interface charge density has a minimum value of 7.85  ×  1011 eV-1 cm-2 for the film deposited at Ta RF power of 75 W. The Hf1-x Ta x O2 films deposited at Ta target RF power of 90 W has shown lower leakage current. The high on/off ratio of the current during the set process in Hf1-x Ta x O2 based memristors is found suitable for bipolar resistive switching memory device applications.

Structural and magnetic properties of quaternary Co{sub 2}Mn{sub 1-x}Cr{sub x}Si Heusler alloy thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aftab, M.; Department of Physics, Quaid-i-Azam University, Islamabad; Hassnain Jaffari, G.

2011-09-01

We present the structural, magnetic, and transport properties of quaternary Co{sub 2}Mn{sub 1-x}Cr{sub x}Si (0 {<=} x {<=} 1) Heusler alloy thin films prepared by DC magnetron sputtering on commercially available glass substrates without any buffer layer. Recent theoretical calculations have shown the compositions to be half-metallic. XRD patterns show the presence of L2{sub 1} structure in the films for x = 0, however, the peaks intensities are not in accordance with the literature. High resolution transmission electron microscopy images of films show granular morphologies, crystalline growth, and an ordered L2{sub 1} structure for x {<=} 0.6. For higher Crmore » concentrations, secondary phases start to appear in the films. Magnetization measurements as a function of applied magnetic field show that the saturation moments for x {<=} 0.2 follow the Slater-Pauling rule, however, for 0.2 < x {<=} 0.6 the saturation moments fall short of the theoretically predicted values. Transport measurements at room temperature show a monotonic increase in resistivity with increasing Cr concentration. These results are explained in terms of texturing effects, Co-Cr antisite disorder, presence of secondary phases, and the amount of disorder present in the films.« less

Quantum and superconducting fluctuations effects in disordered Nb 1- xTa x thin films above Tc

NASA Astrophysics Data System (ADS)

Giannouri, M.; Papastaikoudis, C.

1999-05-01

Disordered Nb 1- xTa x thin films are prepared with e-gun coevaporation. The influence of the β-phase of tantalum in the critical temperature Tc is observed as a function of the substrate temperature. The measurements of transverse magnetoresistance at various isothermals are interpreted in terms of weak-localization and superconducting fluctuations. From the fitting procedure, the phase breaking rate τφ-1 and the Larkin parameter βL are estimated as a function of temperature. Conclusions about the dominant inelastic scattering mechanisms at various temperature regions as well as for the dominant mechanism of superconducting fluctuations near the transition temperature are extracted.

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

NASA Astrophysics Data System (ADS)

Suhandi, A.; Tayubi, Y. R.; Arifin, P.

2016-04-01

Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

Structural and magnetic characterization of mixed valence Co(II, III)xZn1-xO epitaxial thin films

NASA Astrophysics Data System (ADS)

Negi, D. S.; Loukya, B.; Dileep, K.; Sahu, R.; Shetty, S.; Kumar, N.; Ghatak, J.; Pachauri, N.; Gupta, A.; Datta, R.

2014-03-01

In this article, we report on the Co atom incorporation, secondary phase formation and composition-dependent magnetic and optical properties of mixed valence Co(II, III)xZn1-xO epitaxial thin films grown by pulsed laser deposition. The intended total Co concentration is varied between ~6-60 at.% with relatively higher concentration of +3 over +2 charge state. Mixed valence Co(II, III) shows high solubility in ZnO (up to 38 at.%) and ferromagnetism is observed in samples with total Co incorporation of ~29 and 38 at.%. Electron diffraction pattern and high resolution transmission electron microscopy images reveal single crystalline nature of the thin films with wurtzite structure. Co oxide interlayer, with both rock salt and spinel structure, are observed to be formed between the substrate and wurtzite film for total Co concentration at ~17 at.% and above. Magnetization shows composition dependence with a saturation moment value of ~93 emu cm-3 and a coercive field of ~285 Oe observed for ~38 at.% Co:ZnO films. Ferromagnetism was not observed for films with Co concentration 17 and 9 at.%. The Co oxide interlayer does not show any ferromagnetism. All the films are n-type with carrier concentration ~1019 cm-3. The observed magnetism is probably resulting from direct antiferromagntic exchange interaction between Co2+ and Co3+ ions favored by heavy Co alloying giving rise to ferrimagnetism in the system.

Piezoelectric response and electrical properties of Pb(Zr1-xTix)O3 thin films: The role of imprint and composition

NASA Astrophysics Data System (ADS)

Cornelius, T. W.; Mocuta, C.; Escoubas, S.; Merabet, A.; Texier, M.; Lima, E. C.; Araujo, E. B.; Kholkin, A. L.; Thomas, O.

2017-10-01

The compositional dependence of the piezoelectric properties of self-polarized PbZr1-xTixO3 (PZT) thin films deposited on Pt/TiO2/SiO2/Si substrates (x = 0.47, 0.49 and 0.50) was investigated by in situ synchrotron X-ray diffraction and electrical measurements. The latter evidenced an imprint effect in the studied PZT films, which is pronounced for films with the composition of x = 0.50 and tends to disappear for x = 0.47. These findings were confirmed by in situ X-ray diffraction along the crystalline [100] and [110] directions of the films with different compositions revealing asymmetric butterfly loops of the piezoelectric strain as a function of the electric field; the asymmetry is more pronounced for the PZT film with a composition of x = 0.50, thus indicating a higher built-in electric field. The enhancement of the dielectric permittivity and the effective piezoelectric coefficient at compositions around the morphotropic phase boundary were interpreted in terms of the polarization rotation mechanism and the monoclinic phase in the studied PZT thin films.

Structural and morphological studies on Bi{sub 1-x}Ca{sub x}MnO{sub 3} thin films grown by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pugazhvadivu, K. S.; Santhiya, M.; Tamilarasan, K., E-mail: dr.k.tamilarasan@gmail.com

2016-05-23

Bi{sub 1-x}Ca{sub x}MnO{sub 3} (0 ≤ X ≤ 0.4) thin films are deposited on n–type Si (100) substrate at 800 °C by RF magnetron sputtering. X-ray diffraction pattern shows that the films are crystallized in monoclinic structure with C2 space group. The crystallite size and induced strain in the prepared films are measured by W-H plot. The cell parameters and texture coefficient of the films are calculated. The surface morphology of the films is examined by atomic force microscope. The study confirms the optimum level of calcium doping is 20 at. % in Bi site of BiMnO{sub 3} film, thesemore » findings pave the way for further research in the Ca modified BiMnO{sub 3} films towards device fabrication.« less

Effects of sulfurization on the optical properties of Cu2ZnxFe1-xSnS4 thin films

NASA Astrophysics Data System (ADS)

Hannachi, A.; Oueslati, H.; Khemiri, N.; Kanzari, M.

2017-10-01

In order to prepare thin films of novel semiconductor materials that contain only earth abundant, low cost and nontoxic elements, Cu2ZnxFe1-xSnS4 ingots were successfully synthesized by direct fusion method. Crushed powders of these ingots were used as raw materials for the thermal evaporation. Cu2ZnxFe1-xSnS4 (with x = 0, 0.25, 0.5, 0.75 and 1) thin films were deposited on non-heated glass substrates by vacuum evaporation method. The as deposited films were sulfurized for 30 min at sulfurization temperature Ts = 400 °C. The effects of the sulfurization on the structural and optical properties of CZFTS films were realized by X-ray diffraction (XRD) and UV-Vis spectroscopy. XRD patterns show that all sulfurized CZFTS films were polycrystalline in nature with a preferential orientation along the (112) plane. CFTS films exhibit a stannite structure while CZTS films had a kesterite structure. Optical measurements showed that CZFTS films sulfurized at 400 °C exhibited an optical transmittance between 60 and 80% and all materials had relatively high absorption coefficients in the range of 104-105 cm-1. The band gap energies of sulfurized CZFTS films decreased from 1.71 to 1.50 eV with the increase of the Zn content. The dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico and the optical parameters such as refractive index, extinction coefficient, oscillator energy and dispersion energy were calculated. The electrical free carrier susceptibility and the carrier concentration on the effective mass ratio were evaluated according to the model of Spitzer and Fan. The hot probe analysis showed that all sulfurized CZFTS films are p-type conductivity.

Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr 1- xTi xO 3) thin films across the compositional phase diagram

DOE PAGES

Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher; ...

2017-05-23

This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less

Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr 1- xTi xO 3) thin films across the compositional phase diagram

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foley, Brian M.; Paisley, Elizabeth A.; DiAntonio, Christopher

This paper represents a thorough investigation of the thermal conductivity (κ) in both thin film and bulk PbZr 1–xTi xO 3 (PZT) across the compositional phase diagram. Given the technological importance of PZT as a superb piezoelectric and ferroelectric material in devices and systems impacting a wide array of industries, this research serves to fill the gap in knowledge regarding the thermal properties. The thermal conductivities of both thin film and bulk PZT are found to vary by a considerable margin as a function of composition x. Additionally, we observe a discontinuity in κ in the vicinity of the morphotropicmore » phase boundary (MPB, x = 0.48) where there is a 20%–25% decrease in κ in our thin film data, similar to that found in literature data for bulk PZT. The comparison between bulk and thin film materials highlights the sensitivity of κ to size effects such as film thickness and grain size even in disordered alloy/solid-solution materials. A model for the thermal conductivity of PZT as a function of composition (κ(x)) is presented, which enables the application of the virtual crystal approximation for alloy-type material systems with very different crystals structures, resulting in differing temperature trends for κ. We show that in the case of crystalline solid-solutions where the thermal conductivity of one of the parent materials exhibits glass-like temperature trends the compositional dependence of thermal conductivity is relatively constant for most values of x. Finally, this is in stark contrast with the typical trends of thermal conductivity with x in alloys, where the thermal conductivity increases dramatically as the composition of the alloy or solid-solution approaches that of a pure parent materials (i.e., as x = 0 or 1).« less

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

MOCVD (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films for high frequency tunable devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumann, P. K.; Kaufman, D. Y.; Im, J.

2001-01-01

We have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films synthesized at 650{sup o}C on Pt/SiO{sub 2}/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700{sup o}C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

Fermi-level tuning of the Dirac surface state in (Bi1-x Sb x )2Se3 thin films

NASA Astrophysics Data System (ADS)

Satake, Yosuke; Shiogai, Junichi; Takane, Daichi; Yamada, Keiko; Fujiwara, Kohei; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Tsukazaki, Atsushi

2018-02-01

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-x Sb x )2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-x Sb x )2Se3 film with x  =  0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x  =  0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63  ⩽  x  ⩽  0.75. These features suggest that Fermi-level tunable (Bi1-x Sb x )2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

Sputtered (barium(x), strontium(1-x))titanate, BST, thin films on flexible copper foils for use as a non-linear dielectric

NASA Astrophysics Data System (ADS)

Laughlin, Brian James

�C. Sputtered BST thin films on copper foils show comparable dielectric properties to CVD deposited films on platinized silicon substrates proving sputtered BST/Cu specimens can reproduce excellent properties using a more cost-effective processing approach. A concept for reducing the temperature dependence was explored. Stacks of multiple compositions of BST thin films were considered as an extension of core-shell structures to a thin film format. Temperature profiles of BST/Cu films were modeled and mathematically combined in simulations of multi-composition film stacks. Simulations showed singular composition BST thin films could meet X7R specifications if a film has a 292 K < TC < 330 K. Simulations of series connected film stacks show only modest temperature profile broadening. Parallel connected dual composition film stacks showed a 75°C temperature range with essentially flat capacitance by simulating compositions that create a DeltaTC = 283°C. Maximum permittivity and temperature profile shape independent of film thickness or composition were assumed for simulations. BST/Cu thickness and compositions series were fabricated and dielectric properties characterized. These studies showed films could be grown from 300 nm and approaching 1 mum without changing the dielectric temperature response. In studying BST composition, an increasing TC shift was observed when increasing Ba mole fraction in BST thin films while tunability >3:1 was maintained. These results provide a route for creating temperature stable capacitors using a BST/Cu embodiment. An effort to reduce surface roughness of copper foil substrates adversely impacted BST film integrity by impairing adhesion. XPS analysis of high surface roughness commercially obtained Cu foils revealed a surface treatment of Zn-Cu-O that was not present on smooth Cu, thus an investigation of surface chemistry was conducted. Sessile drop experiments were performed to characterize Cu-BST adhesion and the effects of metallic Zn and Zn

Electronic properties of crystalline Ge1-xSbxTey thin films

NASA Astrophysics Data System (ADS)

Fallica, Roberto; Volpe, Flavio; Longo, Massimo; Wiemer, Claudia; Salicio, Olivier; Abrutis, Adulfas

2012-09-01

Ge1-xSbxTey thin films, grown by metalorganic and hot-wire liquid injection chemical vapor deposition in different crystalline phases, are investigated to determine resistivity, carrier density, and carrier mobility in the 4.2-300 K temperature range. It is found that all these chalcogenides exhibit p-type conduction, high carrier density (>2 . 1020 cm-3), and no carrier freeze-out, regardless of composition. Low-temperature mobility data show that both chemical composition and growth technique affect the defect density and, in turn, the carrier scattering mechanisms. In this regard, charge carrier mobility is analyzed according to semi-empirical scattering models and an interpretation is provided.

Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

1999-01-01

We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2018-05-01

This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

CORRIGENDUM: Dielectric dispersion of BaxSr1 - xTiO3 thin film with parallel-plate and coplanar interdigital electrodes Dielectric dispersion of BaxSr1 - xTiO3 thin film with parallel-plate and coplanar interdigital electrodes

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Song, Qing; Xu, Feng; Sheng, Su; Wang, Peng; Ong, C. K.

2010-03-01

Figures 1, 2 and 5 of this paper are reprinted from the authors' previous paper, Zhang X-Y, Wang P, Sheng S, Xu F and Ong C K 2008 Ferroelectric BaxSr1 - xTiO3 thin-film varactors with parallel plate and interdigital electrodes for microwave applications J. Appl. Phys. 104 124110, copyright 2008, with permission from the American Institute of Physics.

Field emission of silicon emitter arrays coated with sol-gel (Ba0.65Sr0.35)1-xLaxTiO3 thin films

NASA Astrophysics Data System (ADS)

Lu, H.; Pan, J. S.; Chen, X. F.; Zhu, W. G.

2007-07-01

(Ba0.65Sr0.35)1-xLaxTiO3 (BSLT) thin films with different La concentrations have been deposited on Si field emitter arrays (FEAs) using sol-gel technology for field electron emission applications. The films exhibit the perovskite structure at low La substitution level (x ≤0.5) and the pyrochlore phase at high La concentration (x ≥0.75). The 30-nm-thick BSLT (x =0.25) thin film has higher crystallinity of perovskite structure in the surface region. An x-ray photoelectron spectroscopy study indicates that the oxygen vacancy concentration decreases with La substitution. With respect to the undoped Ba0.65Sr0.35TiO3 thin film, the Fermi level shifts down for the BSLT sample with x =0.1 ascribed to the decreasing oxygen vacancy concentration, and then shifts up for the BSLT sample with x =0.25 attributed to the increasing La substitution level. In highly doped films with an x value over 0.5, it shifts down again associated with the second pyrochlore phase formation. The best enhancement in field emission is found for the BSLT-coated (x =0.25) Si FEAs due to the improved perovskite structure in the surface region and up-moved Fermi level of the coating.

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

2017-10-01

Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

Room temperature magnetoelectric coupling in BaTi{sub 1−x}Cr{sub x}O{sub 3} multiferroic thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sundararaj, Anuraj; Chandrasekaran, Gopalakrishnan, E-mail: hod.nano@ktr.srmuniv.ac.in; Therese, Helen Annal

2016-01-14

We report on room temperature (RT) magnetoelectric coupling in tetragonal BaTi{sub 1−x}Cr{sub x}O{sub 3} thin film multiferroics (BTCO) sputter deposited on (100) SrTiO{sub 3} (where x = 0.005, 0.01, 0.02, and 0.03). As-deposited thin films are vacuum annealed by electron beam rapid thermal annealing technique. 50 nm thick BTCO with “x = 0.01” shows RT ferromagnetic and ferroelectric response with saturation magnetic moment of 1120 emu/cc and polarization of 14.7 microcoulomb/cm{sup 2}. Piezoresponse/magnetic force microscope images shows RT magnetoelectric coupling in BTCO with “x = 0.01,” which is confirmed using magnetocapacitance measurement where an increase in capacitance from 17.5 pF to 18.4 pF is observed with an applied magneticmore » field.« less

Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt thin films

NASA Astrophysics Data System (ADS)

Hong, Jongin; Song, Han Wook; Lee, Hee Chul; Lee, Won Jong; No, Kwangsoo

2001-08-01

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 600 °C by rf magnetron sputtering. As the thickness of platinum (Pt) thin film increased, the preferred orientation of Pt thin film changed from (200) to (111). PZT thin films were fabricated at 450 °C by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatigue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films having different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors.

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics.

PubMed

Wilke, Rudeger H T; Johnson-Wilke, Raegan L; Cotroneo, Vincenzo; Davis, William N; Reid, Paul B; Schwartz, Daniel A; Trolier-McKinstry, Susan

2013-05-10

Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

Magnetic and transport properties of Co2Mn1-xCrxSi Heusler alloy thin films

NASA Astrophysics Data System (ADS)

Aftab, M.; Hassnain Jaffari, G.; Hasanain, S. K.; Ali Abbas, Turab; Ismat Shah, S.

2013-09-01

Magnetic, transport, and magnetotransport properties of Co2Mn1-xCrxSi (0 ≤ x ≤ 1) DC sputter grown thin films have been investigated. In films with x > 0.2 saturation magnetization values are seen to deviate from the Slater-Pauling rule due to the enhancement of Co-Cr antisite disorder. The increasing structural disorder eventually results in a sign change of the temperature coefficient of resistivity (at x > 0.6), while a resistivity minimum is observed for the metallic compositions. From resistivity measurements, we conclude that there is a phase transition from a half-metallic ferromagnetic phase to a normal ferromagnetic phase at T ˜ 68 K in composition with x ≤ 0.2. Both the onset temperature and the temperature range for half metallic phase were found to decrease with increasing x among the metallic compositions. Magnetotransport measurements performed on metallic compositions at temperatures below and above the resistivity minimum suggest the presence of both the metallic as well as semiconducting/localized states.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

PubMed

Zhang, Ji; Sun, Wei; Zhao, Jiangtao; Sun, Lei; Li, Lei; Yan, Xue-Jun; Wang, Ke; Gu, Zheng-Bin; Luo, Zhen-Lin; Chen, Yanbin; Yuan, Guo-Liang; Lu, Ming-Hui; Zhang, Shan-Tao

2017-08-02

Thin films of 0.85BiFe 1-2x Ti x Mg x O 3 -0.15CaTiO 3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO 3 substrate with and without a conductive La 0.7 Sr 0.3 MnO 3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm 3 , respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO 3 -based materials with unusual multifunctional properties.

X-ray absorption spectroscopy study of annealing process on Sr1-xLaxCuO2 electron-doped cuprate thin films

NASA Astrophysics Data System (ADS)

Galdi, A.; Orgiani, P.; Sacco, C.; Gobaut, B.; Torelli, P.; Aruta, C.; Brookes, N. B.; Minola, M.; Harter, J. W.; Shen, K. M.; Schlom, D. G.; Maritato, L.

2018-03-01

The superconducting properties of Sr1-xLaxCuO2 thin films are strongly affected by sample preparation procedures, including the annealing step, which are not always well controlled. We have studied the evolution of Cu L2,3 and O K edge x-ray absorption spectra (XAS) of Sr1-xLaxCuO2 thin films as a function of reducing annealing, both qualitatively and quantitatively. By using linearly polarized radiation, we are able to identify the signatures of the presence of apical oxygen in the as-grown sample and its gradual removal as a function of duration of 350 °C Ar annealing performed on the same sample. Even though the as-grown sample appears to be hole doped, we cannot identify the signature of the Zhang-Rice singlet in the O K XAS, and it is extremely unlikely that the interstitial excess oxygen can give rise to a superconducting or even a metallic ground state. XAS and x-ray linear dichroism analyses are, therefore, shown to be valuable tools to improving the control over the annealing process of electron doped superconductors.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Periodic domain inversion in x-cut single-crystal lithium niobate thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mackwitz, P., E-mail: peterm@mail.upb.de; Rüsing, M.; Berth, G.

2016-04-11

We report the fabrication of periodically poled domain patterns in x-cut lithium niobate thin-film. Here, thin films on insulator have drawn particular attention due to their intrinsic waveguiding properties offering high mode confinement and smaller devices compared to in-diffused waveguides in bulk material. In contrast to z-cut thin film lithium niobate, the x-cut geometry does not require back electrodes for poling. Further, the x-cut geometry grants direct access to the largest nonlinear and electro-optical tensor element, which overall promises smaller devices. The domain inversion was realized via electric field poling utilizing deposited aluminum top electrodes on a stack of LNmore » thin film/SiO{sub 2} layer/Bulk LN, which were patterned by optical lithography. The periodic domain inversion was verified by non-invasive confocal second harmonic microscopy. Our results show domain patterns in accordance to the electrode mask layout. The second harmonic signatures can be interpreted in terms of spatially, overlapping domain filaments which start their growth on the +z side.« less

CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1- x N Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Chen, Wei-Liang; Kuo, Dong-Hau; Tuan, Thi Tran Anh

2017-03-01

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target, followed by two-step post-selenization at 500-600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. The p-type CZTSe and the n-type In x Ga1- x N films were characterized. The properties of CZTSe changed with the selenization temperature and the In x Ga1- x N with its indium content. With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ˜48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-05-01

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopymore » with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Anisotropic spin-density distribution and magnetic anisotropy of strained La1-xSrxMnO3 thin films: angle-dependent x-ray magnetic circular dichroism

NASA Astrophysics Data System (ADS)

Shibata, Goro; Kitamura, Miho; Minohara, Makoto; Yoshimatsu, Kohei; Kadono, Toshiharu; Ishigami, Keisuke; Harano, Takayuki; Takahashi, Yukio; Sakamoto, Shoya; Nonaka, Yosuke; Ikeda, Keisuke; Chi, Zhendong; Furuse, Mitsuho; Fuchino, Shuichiro; Okano, Makoto; Fujihira, Jun-ichi; Uchida, Akira; Watanabe, Kazunori; Fujihira, Hideyuki; Fujihira, Seiichi; Tanaka, Arata; Kumigashira, Hiroshi; Koide, Tsuneharu; Fujimori, Atsushi

2018-01-01

Magnetic anisotropies of ferromagnetic thin films are induced by epitaxial strain from the substrate via strain-induced anisotropy in the orbital magnetic moment and that in the spatial distribution of spin-polarized electrons. However, the preferential orbital occupation in ferromagnetic metallic La1-xSrxMnO3 (LSMO) thin films studied by x-ray linear dichroism (XLD) has always been found out-of-plane for both tensile and compressive epitaxial strain and hence irrespective of the magnetic anisotropy. In order to resolve this mystery, we directly probed the preferential orbital occupation of spin-polarized electrons in LSMO thin films under strain by angle-dependent x-ray magnetic circular dichroism (XMCD). Anisotropy of the spin-density distribution was found to be in-plane for the tensile strain and out-of-plane for the compressive strain, consistent with the observed magnetic anisotropy. The ubiquitous out-of-plane preferential orbital occupation seen by XLD is attributed to the occupation of both spin-up and spin-down out-of-plane orbitals in the surface magnetic dead layer.

Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

NASA Astrophysics Data System (ADS)

Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

2015-02-01

The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

Some physical investigations on ZnS 1- xSe x films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme

NASA Astrophysics Data System (ADS)

Fridjine, S.; Touihri, S.; Boubaker, K.; Amlouk, M.

2010-01-01

ZnS 1- xSe x thin films have been grown by selenization process, applied to ZnS sprayed thin films deposited on Pyrex glass substrates at 550 °C. The crystal structure and surface morphology were investigated by the XRD technique and by the atomic force microscopy. This structural study shows that selenium-free ( x=0) ZnS thin films, prepared at substrate temperature TS=450 °C, were well crystallized in cubic structure and oriented preferentially along (1 1 1) direction. The thermal and mechanical properties were also investigated using a photothermal protocol along with Vickers hardness measurements. On the other hand, the analyze of the transmittance T( λ) and the reflectance R( λ), optical measurements of these films depicts a decrease in the band gap energy value Eg with an increase in Se content ( x). Indeed, Eg values vary from 3.6 to 3.1 eV.

Effect of cadmium incorporation on the properties of zinc oxide thin films

NASA Astrophysics Data System (ADS)

Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

2018-02-01

Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

Nanoscale semiconductor Pb1-xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

NASA Astrophysics Data System (ADS)

Lin, Shaoxiong; Zhang, Xin; Shi, Xuezhao; Wei, Jinping; Lu, Daban; Zhang, Yuzhen; Kou, Huanhuan; Wang, Chunming

2011-04-01

In this paper the fabrication and characterization of IV-VI semiconductor Pb1-xSnxSe (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn …), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb1-xSnxSe is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

High-Throughput Synthesis and Characterization of Eu Doped Ba xSr2- xSiO4 Thin Film Phosphors.

PubMed

Frost, Sara; Guérin, Samuel; Hayden, Brian E; Soulié, Jean-Philippe; Vian, Chris

2018-06-20

High-throughput techniques have been employed for the synthesis and characterization of thin film phosphors of Eu-doped Ba x Sr 2- x SiO 4 . Direct synthesis from evaporation of the constituent elements under a flux of atomic oxygen on a sapphire substrate at 850 °C was used to directly produce thin film libraries (415 nm thickness) of the crystalline orthosilicate phase with the desired compositional variation (0.24 > x > 1.86). The orthosilicate phase could be synthesized as a pure, or predominantly pure, phase. Annealing the as synthesized library in a reducing atmosphere resulted in the reduction of the Eu while retaining the orthosilicate phase, and resulted in a materials thin film library where fluorescence excited by blue light (450 nm) was observable by the naked eye. Parallel screening of the fluorescence from the combinatorial libraries of Eu doped Ba x Sr 2- x SiO 4 has been implemented by imaging the fluorescent radiation over the library using a monochrome digital camera using a series of color filters. Informatics tools have been developed to allow the 1931 CIE color coordinates and the relative quantum efficiencies of the materials library to be rapidly assessed and mapped against composition, crystal structure and phase purity. The range of compositions gave values of CIE x between 0.17 and 0.52 and CIE y between 0.48 and 0.69 with relative efficiencies in the range 2.0 × 10 -4 -7.6 × 10 -4 . Good agreement was obtained between the thin film phosphors and the fluorescence characteristics of a number of corresponding bulk phosphor powders. The thermal quenching of fluorescence in the thin film libraries was also measured in the temperature range 25-130 °C: The phase purity of the thin film was found to significantly influence both the relative quantum efficiency and the thermal quenching of the fluorescence.

Structural and optical properties of Sb65Se35-xGex thin films

NASA Astrophysics Data System (ADS)

Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

2011-07-01

Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

PubMed Central

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

PubMed

Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

2018-04-09

The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

Thin film growth studies using time-resolved x-ray scattering

NASA Astrophysics Data System (ADS)

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Thin film growth studies using time-resolved x-ray scattering.

PubMed

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Resolution of the discrepancy between the variation of the physical properties of Ce 1-xYb xCoIn 5 single crystals and thin films with Yb composition

DOE PAGES

Jang, S.; White, B. D.; Lum, I. K.; ...

2014-11-18

The extraordinary electronic phenomena including an Yb valence transition, a change in Fermi surface topology, and suppression of the heavy fermion quantum critical field at a nominal concentration x≈0.2 have been found in the Ce 1-xYb xCoIn 5 system. These phenomena have no discernable effect on the unconventional superconductivity and normal-state non-Fermi liquid behaviour that occur over a broad range of x up to ~0.8. However, the variation of the coherence temperature T* and the superconducting critical temperature T c with nominal Yb concentration x for bulk single crystals is much weaker than that of thin films. To determine whethermore » differences in the actual Yb concentration of bulk single crystals and thin film samples might be responsible for these discrepancies, we employed Vegard’s law and the spectroscopically determined values of the valences of Ce and Yb as a function of x to determine the actual composition x act of bulk single crystals. This analysis is supported by energy-dispersive X-ray spectroscopy, wavelength-dispersive X-ray spectroscopy, and transmission X-ray absorption edge spectroscopy measurements. The actual composition x act is found to be about one-third of the nominal concentration x up to x~0.5, and resolves the discrepancy between the variation of the physical properties of Ce 1-xYb xCoIn 5 single crystals and thin films with Yb concentration.« less

Thickness and temperature dependent electrical characteristics of crystalline BaxSr1-xTiO3 thin films

NASA Astrophysics Data System (ADS)

Panda, B.; Roy, A.; Dhar, A.; Ray, S. K.

2007-03-01

Polycrystalline Ba1-xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.

X-ray structural investigation of nonsymmetrically and symmetrically alkylated [1]benzothieno[3,2-b]benzothiophene derivatives in bulk and thin films.

PubMed

Gbabode, Gabin; Dohr, Michael; Niebel, Claude; Balandier, Jean-Yves; Ruzié, Christian; Négrier, Philippe; Mondieig, Denise; Geerts, Yves H; Resel, Roland; Sferrazza, Michele

2014-08-27

A detailed structural study of the bulk and thin film phases observed for two potential high-performance organic semiconductors has been carried out. The molecules are based on [1]benzothieno[3,2-b]benzothiophene (BTBT) as conjugated core and octyl side groups, which are anchored either symmetrically at both sides of the BTBT core (C8-BTBT-C8) or nonsymmetrically at one side only (C8-BTBT). Thin films of different thickness (8-85 nm) have been prepared by spin-coating for both systems and analyzed by combining specular and grazing incidence X-ray diffraction. In the case of C8-BTBT-C8, the known crystal structure obtained from single-crystal investigations is observed within all thin films, down to a film thickness of 9 nm. In the case of C8-BTBT, the crystal structure of the bulk phase has been determined from X-ray powder diffraction data with a consistent matching of experimental and calculated X-ray diffraction patterns (Rwp = 5.8%). The packing arrangement of C8-BTBT is similar to that of C8-BTBT-C8, that is, consisting of a lamellar structure with molecules arranged in a "herringbone" fashion, yet with lamellae composed of two head-to-head (or tail-to-tail as the structure is periodic) superimposed molecules instead of only one molecule for C8-BTBT-C8. As for C8-BTBT-C8, we demonstrate that the same phase is observed in bulk and thin films for C8-BTBT whatever the film thickness investigated.

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides.

PubMed

Sivakumar, Sai; Zwier, Elizabeth; Meisenheimer, Peter Benjamin; Heron, John T

2018-05-29

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

Specific considerations for obtaining appropriate La1-xSrxGa1-yMgyO3-δ thin films using pulsed-laser deposition and its influence on the performance of solid-oxide fuel cells

NASA Astrophysics Data System (ADS)

Hwang, Jaeyeon; Lee, Heon; Lee, Jong-Ho; Yoon, Kyung Joong; Kim, Hyoungchul; Hong, Jongsup; Son, Ji-Won

2015-01-01

To obtain La1-xSrxGa1-yMgyO3-δ (LSGM) thin films with the appropriate properties, pulsed-laser deposition (PLD) is employed, and specific considerations regarding control of the deposition parameters is investigated. It is demonstrated that with a target of stoichiometric composition, appropriate LSGM thin films cannot be produced because of the deviation of the composition from the target to the thin film. Only after adjusting the target composition an LSGM thin film with an appropriate composition and phase can be obtained. The optimized LSGM thin film possesses an electrical conductivity close to that of the bulk LSGM. In contrast, non-optimized thin films do not yield any measurable electrical conductivity. The impact of the optimization of the LSGM thin-film electrolyte on the cell performance is quite significant, in that a solid-oxide fuel cell (SOFC) with an optimized LSGM thin-film electrolyte produces a maximum power density of 1.1 W cm-2 at 600 °C, whereas an SOFC with a non-optimal LSGM thin-film electrolyte is not operable.

Absorbing TiO x thin film enabling laser welding of polyurethane membranes and polyamide fibers.

PubMed

Amberg, Martin; Haag, Alexander; Storchenegger, Raphael; Rupper, Patrick; Lehmeier, Frederike; Rossi, René M; Hegemann, Dirk

2015-10-01

We report on the optical properties of thin titanium suboxide (TiO x ) films for applications in laser transmission welding of polymers. Non-absorbing fibers were coated with TiO x coatings by reactive magnetron sputtering. Plasma process parameters influencing the chemical composition and morphology of the deposited thin films were investigated in order to optimize their absorption properties. Optical absorption spectroscopy showed that the oxygen content of the TiO x coatings is the main parameter influencing the optical absorbance. Overtreatment (high power plasma input) of the fiber surface leads to high surface roughness and loss of mechanical stability of the fiber. The study shows that thin substoichiometric TiO x films enable the welding of very thin polyurethane membranes and polyamide fibers with improved adhesion properties.

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zukauskaite, Agne; Wingqvist, Gunilla; Palisaitis, Justinas

2012-01-01

Piezoelectric wurtzite ScxAl1 xN (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopymore » mapping shows a mass separation into ScN-rich and AlN-rich domains for x 0.2 when substrate temperature is increased from 400 to 800 C. The piezoelectric response of epitaxial ScxAl1 xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.« less

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

PubMed

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

Effects of crystallization on structural and dielectric properties of thin amorphous films of (1 - x)BaTiO3-xSrTiO3 (x=0-0.5, 1.0)

NASA Astrophysics Data System (ADS)

Kawano, H.; Morii, K.; Nakayama, Y.

1993-05-01

The possibilities for fabricating solid solutions of (Ba1-x,Srx)TiO3 (x≤0.5,1.0) by crystallization of amorphous films and for improving their dielectric properties by adjusting the Sr content were investigated. Thin amorphous films were prepared from powder targets consisting of mixtures of BaTiO3 and SrTiO3 by sputtering with a neutralized Ar-ion beam. The amorphous films crystallized into (Ba1-x, Srx)TiO3 solid solutions with a cubic perovskite-type structure after annealing in air at 923 K for more than 1 h. The Debye-type dielectric relaxation was observed for the amorphous films, whereas the crystallized films showed paraelectric behavior. The relative dielectric constants were of the order of 20 for the amorphous samples, but increased greatly after crystallization to about 60-200, depending on the composition; a larger increase in the dielectric constant was observed in the higher Sr content films, in the range x≤0.5, which could be correlated with an increase in the grain size of the crystallites. The crystallization processes responsible for the difference in the grain size are discussed based on the microstructural observations.

Application of ICP-OES to the determination of CuIn(1-x)Ga(x)Se2 thin films used as absorber materials in solar cell devices.

PubMed

Fernández-Martínez, Rodolfo; Caballero, Raquel; Guillén, Cecilia; Gutiérrez, María Teresa; Rucandio, María Isabel

2005-05-01

CuIn(1-x)Ga(x)Se2 [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO3 alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

NASA Astrophysics Data System (ADS)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

NASA Astrophysics Data System (ADS)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

Temperature Behavior of Thin Film Varactor

DTIC Science & Technology

2012-01-01

Temperature Behavior of Thin Film Varactor By Richard X. Fu ARL-TR-5905 January 2012...Thin Film Varactor Richard X. Fu Sensors and Electron Devices Directorate, ARL...DD-MM-YYYY) January 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Temperature Behavior of Thin Film Varactor 5a

Nanostructured Si(₁-x)Gex for tunable thin film lithium-ion battery anodes.

PubMed

Abel, Paul R; Chockla, Aaron M; Lin, Yong-Mao; Holmberg, Vincent C; Harris, Justin T; Korgel, Brian A; Heller, Adam; Mullins, C Buddie

2013-03-26

Both silicon and germanium are leading candidates to replace the carbon anode of lithium ions batteries. Silicon is attractive because of its high lithium storage capacity while germanium, a superior electronic and ionic conductor, can support much higher charge/discharge rates. Here we investigate the electronic, electrochemical and optical properties of Si(1-x)Gex thin films with x = 0, 0.25, 0.5, 0.75, and 1. Glancing angle deposition provided amorphous films of reproducible nanostructure and porosity. The film's composition and physical properties were investigated by X-ray photoelectron spectroscopy, four-point probe conductivity, Raman, and UV-vis absorption spectroscopy. The films were assembled into coin cells to test their electrochemical properties as a lithium-ion battery anode material. The cells were cycled at various C-rates to determine the upper limits for high rate performance. Adjusting the composition in the Si(1-x)Gex system demonstrates a trade-off between rate capability and specific capacity. We show that high-capacity silicon anodes and high-rate germanium anodes are merely the two extremes; the composition of Si(1-x)Gex alloys provides a new parameter to use in electrode optimization.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Scaling effects in sodium zirconium silicate phosphate (Na 1+ xZr 2Si xP 3- xO 12) ion-conducting thin films

DOE PAGES

Ihlefeld, Jon F.; Gurniak, Emily; Jones, Brad H.; ...

2016-05-04

Preparation of sodium zirconium silicate phosphate (NaSICon), Na 1+xZr 2Si xP 3–xO 12 (0.25 ≤ x ≤ 1.0), thin films has been investigated via a chemical solution approach on platinized silicon substrates. Increasing the silicon content resulted in a reduction in the crystallite size and a reduction in the measured ionic conductivity. Processing temperature was also found to affect microstructure and ionic conductivity with higher processing temperatures resulting in larger crystallite sizes and higher ionic conductivities. The highest room temperature sodium ion conductivity was measured for an x = 0.25 composition at 2.3 × 10 –5 S/cm. In conclusion, themore » decreasing ionic conductivity trends with increasing silicon content and decreasing processing temperature are consistent with grain boundary and defect scattering of conducting ions.« less

Synchrotron X-ray studies of model SOFC cathodes, part I: Thin film cathodes

DOE PAGES

Chang, Kee-Chul; Ingram, Brian; Ilavsky, Jan; ...

2017-10-14

In this work, we present synchrotron x-ray investigations of thin film La 0.6Sr 0.4Co 0.2Fe 0.8O 3-δ (LSCF) model cathodes for solid oxide fuel cells, grown on electrolyte substrates by pulse laser deposition, in situ during half-cell operations. We observed dynamic segregations of cations, such as Sr and Co, on the surfaces of the film cathodes. The effects of temperature, applied potentials, and capping layers on the segregations were investigated using a surfacesensitive technique of total external reflection x-ray fluorescence. We also studied patterned thin film LSCF cathodes using high-resolution micro-beam diffraction measurements. We find chemical expansion decreases for narrowmore » stripes. This suggests the expansion is dominated by the bulk pathway reactions. Lastly, the chemical expansion vs. the distance from the electrode contact was measured at three temperatures and an oxygen vacancy activation energy was estimated to be ~1.4 eV.« less

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.

YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

2017-06-01

The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

Analysis of compositional uniformity in Al{sub x}Ga{sub 1−x}N thin films using atom probe tomography and electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fang; Huang, Li; Porter, Lisa M.

2016-07-15

Calculated frequency distributions of atom probe tomography reconstructions (∼80 nm field of view) of very thin Al{sub x}Ga{sub 1−x}N (0.18 ≤ x ≤ 0.51) films grown via metalorganic vapor phase epitaxy on both (0001) GaN/AlN/SiC and (0001) GaN/sapphire heterostructures revealed homogeneous concentrations of Al and chemically abrupt Al{sub x}Ga{sub 1−x}N/GaN interfaces. The results of scanning transmission electron microscopy and selected area diffraction corroborated these results and revealed that neither superlattice ordering nor phase separation was present at nanometer length scales.

Spatially homogeneous ferromagnetism below the enhanced Curie temperature in EuO(1-x) thin films.

PubMed

Monteiro, Pedro M S; Baker, Peter J; Ionescu, Adrian; Barnes, Crispin H W; Salman, Zaher; Suter, Andreas; Prokscha, Thomas; Langridge, Sean

2013-05-24

We have used low-energy implanted muons as a volume sensitive probe of the magnetic properties of EuO(1-x) thin films. We find that static and homogeneous magnetic order persists up to the elevated T(C) in the doped samples, and the muon signal displays the double dome feature also observed in the sample magnetization. Our results appear incompatible with either the magnetic phase separation or bound magnetic polaron descriptions previously suggested to explain the elevated T(C), but are compatible with an RKKY-like interaction mediating magnetic interactions above 69 K.

{ital In-situ} x-ray investigation of hydrogen charging in thin film bimetallic electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jisrawi, N.M.; Wiesmann, H.; Ruckman, M.W.

Hydrogen uptake and discharge by thin metallic films under potentiostatic control was studied using x-ray diffraction at the National Synchrotron Light Source (NSLS). The formation of metal-hydrogen phases in Pd, Pd-capped Nb and Pd/Nb multilayer electrode structures was deduced from x-ray diffraction data and correlated with the cyclic voltammetry (CV) peaks. The x-ray data was also used to construct a plot of the hydrogen concentration as a function of cell potential for a multilayered thin film. {copyright} {ital 1997 Materials Research Society.}

Superconductivity-localization interplay and fluctuation magnetoresistance in epitaxial BaPb1 -xBixO3 thin films

NASA Astrophysics Data System (ADS)

Harris, D. T.; Campbell, N.; Uecker, R.; Brützam, M.; Schlom, D. G.; Levchenko, A.; Rzchowski, M. S.; Eom, C.-B.

2018-04-01

BaPb1 -xBixO3 is a superconductor, with transition temperature Tc=11 K, whose parent compound BaBiO3 possesses a charge ordering phase and perovskite crystal structure reminiscent of the cuprates. The lack of magnetism simplifies the BaPb1 -xBixO3 phase diagram, making this system an ideal platform for contrasting high-Tc systems with isotropic superconductors. Here we use high-quality epitaxial thin films and magnetotransport to demonstrate superconducting fluctuations that extend well beyond Tc. For the thickest films (thickness above ˜100 nm ) this region extends to ˜27 K , well above the bulk Tc and remarkably close to the higher Tc of Ba1 -xKxBiO3 (Tc=31 K). We drive the system through a superconductor-insulator transition by decreasing thickness and find the observed Tc correlates strongly with disorder. This material manifests strong fluctuations across a wide range of thicknesses, temperatures, and disorder presenting new opportunities for understanding the precursor of superconductivity near the 2D-3D dimensionality crossover.

Probing molecular orientations in thin films by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Li, Y.; Li, P.; Lu, Z.-H.

2018-03-01

A great number of functional organic molecules in active thin-film layers of optoelectronic devices have highly asymmetric structures, such as plate-like, rod-like, etc. This makes molecular orientation an important aspect in thin-films as it can significantly affect both the optical and electrical performance of optoelectronic devices. With a combination of in-situ ultra violet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS) investigations for organic molecules having a broad range of structural properties, we discovered a rigid connection of core levels and frontier highest occupied molecular orbital levels at organic interfaces. This finding opens up opportunities of using X-ray photoemission spectroscopy as an alternative tool to UPS for providing an easy and unambiguous data interpretation in probing molecular orientations.

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Tunneling Spectroscopy of MoN and NbxTi1-xN Thin Films Grown by Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Chaoyue; Groll, Nickolas; Klug, Jeffrey; Becker, Nicholas; Altin, Serdar; Proslier, Thomas; Zasadzinski, John

2014-03-01

Tunneling I(V) and dI/dV vs. V are reported on superconducting thin films of MoN and NbxTi1-xN using a point contact method with a Au tip. The films are grown by the chemical process of atomic layer deposition (ALD) onto various substrates (Si, quartz, sapphire) held at 450 C. Resistively measured superconducting Tc values up to 12K and 13K are found for the MoN and NbxTi1-xN respectively. Artificial tunnel barriers (1-3 nm thick) of Al2O3, also grown by ALD, are shown to provide much improved tunneling characteristics compared to the native oxides. Relatively high quality gap features are observed with zero-bias conductance values as low as ~ 10% of the high bias values. Gap parameters Δ ~ 2.0meV are found for the MoN and Δ ~ 2.0-2.4 meV for the NbxTi1-xN which follow the BCS temperature dependence and close near the measured film Tc indicating bulk superconductivity at the surface. The suitability of such conformal ALD grown films for potential superconducting devices is discussed. This work was supported by the U.S. Department of Energy, Office of Science under contract No. DE-AC02-06CH11357.

Methods for preparing colloidal nanocrystal-based thin films

DOEpatents

Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

2016-05-10

Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Efficiency loss of thin film Cu(InxGa1-x)Se(S) solar panels by lamination process

NASA Astrophysics Data System (ADS)

Xu, Li

2017-04-01

Efficiency loss of thin film Cu(InxGa1-x)Se(S) (CIGS) solar panels by lamination process has been compromising the final output power in commercial products of solar modules, but few reports have been published on such issue, as the majority of the investigation is focused on the efficiency at the circuit level, i.e., before lamination process. In this paper, we studied the effect of lamination process to the efficiency loss of thin film CIGS solar panels. It was observed that the fill factor degradation dominated the efficiency loss with the small change of Voc and Jsc. Experiments showed that neither the temperature nor the pressure, nor the two combined in the lamination process is the root cause of the efficiency loss; instead, the ethylene vinyl acetate (EVA) layer as the encapsulation material which directly contacts the solar cell devices was the major factor responsible for the efficiency loss. It was found that the gel content of the cured EVA film after lamination was highly correlated to the efficiency loss. The higher the gel content, the higher the efficiency loss. The mismatch of coefficient of thermal expansion between the EVA film and the CIGS thin film resulted in compressive stress in the device layer after lamination process. The compressive stress is speculated to affect the lattice defects, but need to be confirmed with the measurement of capacitance voltage (CV) and drive level capacitance profiling (DLCP). Three-day sun soak was then carried out and it was observed that the fill factor recovered significantly and so did the efficiency. Experiments also showed that there was no impact of chemical erosion on the front electrode of transparent conductive oxide (TCO) films by chemicals released from the EVA films during lamination.

Thin-film rechargeable lithium batteries

NASA Astrophysics Data System (ADS)

Dudney, N. J.; Bates, J. B.; Lubben, D.

1994-11-01

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

Influence of annealing on X-ray radiation sensing properties of TiO2 thin film

NASA Astrophysics Data System (ADS)

Sarma, M. P.; Kalita, J. M.; Wary, G.

2018-03-01

A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333 K, 363 K, 393 K, 473 K, and 573 K for 1 hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26 eV to 3.10 eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2 V‒1.0 V). At higher bias voltage (>1.0 V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Dielectric Properties of BST/(Y 2O 3) x(ZrO 2) 1-x/BST Trilayer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Santosh K.; Misra, D.

2011-01-31

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure ismore » studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.« less

Effect of Gallium Substitution on Lithium-Ion Conductivity and Phase Evolution in Sputtered Li7-3 xGa xLa3Zr2O12 Thin Films.

PubMed

Rawlence, M; Filippin, A N; Wäckerlin, A; Lin, T-Y; Cuervo-Reyes, E; Remhof, A; Battaglia, C; Rupp, J L M; Buecheler, S

2018-04-25

Replacing the liquid electrolyte in conventional lithium-ion batteries with thin-film solid-state lithium-ion conductors is a promising approach for increasing energy density, lifetime, and safety. In particular, Li 7 La 3 Zr 2 O 12 is appealing due to its high lithium-ion conductivity and wide electrochemical stability window. Further insights into thin-film processing of this material are required for its successful integration into solid-state batteries. In this work, we investigate the phase evolution of Li 7-3 x Ga x La 3 Zr 2 O 12 in thin films with various amounts of Li and Ga for stabilizing the cubic phase. Through this work, we gain valuable insights into the crystallization processes unique to thin films and are able to form dense Li 7-3 x Ga x La 3 Zr 2 O 12 layers stabilized in the cubic phase with high in-plane lithium-ion conductivities of up to 1.6 × 10 -5 S cm -1 at 30 °C. We also note the formation of cubic Li 7 La 3 Zr 2 O 12 at the relatively low temperature of 500 °C.

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

NASA Astrophysics Data System (ADS)

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

2018-03-01

We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (χ) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained.

Design and fabrication of adjustable x-ray optics using piezoelectric thin films

NASA Astrophysics Data System (ADS)

Walker, J.; Liu, T.; Tendulkar, M.; Burrows, D.; DeRoo, C. T.; Allured, R.; Hertz, E.; Cotroneo, V.; Reid, P.; Schwartz, E. D.; Jackson, T. N.; Trolier-McKinstry, S.

2017-08-01

Piezoelectric adjustable optics are being developed for high throughput, high resolution, low mass Xray mirror assemblies. These optics require robust piezoelectric thin films and reproducible lithographic patterning on curved glass substrates. This work details the cleaning of Corning Eagle XG glass substrates for thin shell X-ray mirrors by a three stage acid and solvent cleaning procedure before a 0.02 μm Ti adhesion layer and a 0.1 μm Pt bottom electrode layer was deposited using DC magnetron sputtering. Piezoelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin films with a thickness of 1.5 μm were then deposited by radio frequency magnetron sputtering in three 0.5 µm layers with intermittent annealing steps in a rapid thermal annealing furnace at 650°C for 60 seconds. Defects observed in the piezoelectric thin films were linked to residue remaining on the glass after cleaning. 112 piezoelectric cells and 100 μm wide conductive Pt traces were patterned using bilayer photolithography. The photoresist layers were deposited using spin coating at 2000 and 4000 RPM to achieve uniform 1 μm thick layers, resulting in reproducibly resolved features with limiting resolutions of approximately >25 μm. The resulting mirror pieces achieved a 100% yield, with average relative permittivity of 1270, dielectric loss 0.047, coercive field 30 kV/cm and remanent polarization of 20 μC/cm2 . While the defects observed in the films appeared to have not influence on the electrical properties, additional cleaning steps using DI water were proposed to further reduce their presence.

Topographic measurement of buried thin-film interfaces using a grazing resonant soft x-ray scattering technique

NASA Astrophysics Data System (ADS)

Gann, Eliot; Watson, Anne; Tumbleston, John R.; Cochran, Justin; Yan, Hongping; Wang, Cheng; Seok, Jaewook; Chabinyc, Michael; Ade, Harald

2014-12-01

The internal structures of thin films, particularly interfaces between different materials, are critical to system properties and performance across many disciplines, but characterization of buried interface topography is often unfeasible. In this work, we demonstrate that grazing resonant soft x-ray scattering (GRSoXS), a technique measuring diffusely scattered soft x rays from grazing incidence, can reveal the statistical topography of buried thin-film interfaces. By controlling and predicting the x-ray electric field intensity throughout the depth of the film and simultaneously the scattering contrast between materials, we are able to unambiguously identify the microstructure at different interfaces of a model polymer bilayer system. We additionally demonstrate the use of GRSoXS to selectively measure the topography of the surface and buried polymer-polymer interface in an organic thin-film transistor, revealing different microstructure and markedly differing evolution upon annealing. In such systems, where only indirect control of interface topography is possible, accurate measurement of the structure of interfaces for feedback is critically important. While we demonstrate the method here using organic materials, we also show that the technique is readily extendable to any thin-film system with elemental or chemical contrasts exploitable at absorption edges.

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1-x Pd x N thin films

NASA Astrophysics Data System (ADS)

Xu, T.; Ji, G. P.; Cao, Z. X.; Ji, A. L.

2018-02-01

Thin films of antiperovskite Mn3Mn1-x Pd x N with x up to 0.36 were grown by reactive magnetron co-sputtering method. All the deposits exhibit a [1 0 0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more Pd atoms partially substituting the MnI atoms in Mn3MnN matrix. The replacement of MnI atoms in antiperovskite structure by Pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. Moreover, a positive magnetoresistance was observed in samples of a high Pd content. These tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry.

Polycrystalline-thin-film thermophotovoltaic cells

NASA Astrophysics Data System (ADS)

Dhere, Neelkanth G.

1996-02-01

Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

Investigation of Surface Sulfurization in CuIn1-x Gax S2-y Sey Thin Films by Using Kelvin Probe Force Microscopy.

PubMed

Kim, Haeri; Park, Se Jin; Kim, Byungwoo; Hwang, Yun Jeong; Min, Byoung Koun

2018-02-05

CuIn 1-x Ga x S 2-y Se y (CIGSSe) thin films have attracted a great deal of attention as promising absorbing materials for solar cell applications, owing to their favorable optical properties (e.g. a direct band gap and high absorption coefficients) and stable structure. Many studies have sought to improve the efficiency of solar cells using these films, and it has been found that surface modification through post-heat treatment can lead to surface passivation of surface defects and a subsequent increase in efficiency. The surface properties of solution-processed CIGSSe films are considered to be particularly important in this respect, owing to the fact that they are more prone to defects. In this work, CIGSSe thin films with differing S/Se ratios at their surface were synthesized by using a precursor solution and post-sulfurization heat treatment. These CIGSSe thin films were investigated with current-voltage and Kelvin probe force microscope (KPFM) analyses. Surface photovoltage (SPV), which is the difference in the work function in the dark and under illumination, was measured by using KPFM, which can examine the screening and the modification of surface charge through carrier trapping. As the concentration of S increases on the CIGSSe film surface, higher work functions and more positive SPV values were observed. Based on these measurements, we inferred the band-bending behavior of CIGSSe absorber films and proposed reasons for the improvement in solar cell performance. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Studies of Nano-structured Se77Sb23- x Ge x Thin Films Prepared by Physical Vapor Condensation Technique

NASA Astrophysics Data System (ADS)

Alvi, M. A.

2017-02-01

Bulk Se77Sb23- x Ge x material with x = 4 and 12 was prepared by employing a melt quench technique. Its amorphous as well as glassy nature was confirmed by x-ray diffraction analysis and nonisothermal differential scanning calorimetry measurements. The physical vapor condensation technique was applied to prepare nanostructured thin films of Se77Sb23- x Ge x material. The surface morphology of the films was examined using field-emission scanning electron microscopy, revealing average particle size between 20 nm and 50 nm. Systematic investigation of optical absorption data indicated that the optical transition was indirect in nature. The dark conductivity (dc conductivity) of nano-structured Se77Sb23- x Ge x thin films was also investigated at temperatures from 313 K to 463 K, revealing that it tended to increase with increasing temperature. Analyses of our experimental data also indicate that the conduction is due to thermally supported tunneling of charge carriers in confined states close to the band edges. The calculated values of activation energy agree well with the optical bandgap.

Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

DOE PAGES

Shi, Chenyang; Teerakapibal, Rattavut; Yu, Lian; ...

2017-07-10

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accurate in situmore » structural studies for a wide range of materials.« less

Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Chenyang; Teerakapibal, Rattavut; Yu, Lian

2017-07-10

Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accuratein situstructuralmore » studies for a wide range of materials.« less

Thin-film X-ray filters on microstructured substrates and their thermophysical properties

NASA Astrophysics Data System (ADS)

Mitrofanov, A. V.

2018-02-01

It is shown that structured substrates having micron- or submicron-sized through holes and coated with an ultrathin organic film can be used for the fabrication of thin-film X-ray filters via direct growth of functional layers on a substrate by sputter deposition, without additional complex processing steps. An optimised process is considered for the fabrication of X-ray filters on support structures in the form of electroplated fine nickel grids and on track-etched polymer membranes with micron- and submicrondiameter through pores. 'Optimisation' is here taken to mean matching the sputter deposition conditions with the properties of substrates so as to avoid overheating. The filters in question are intended for both imaging and single-channel detectors operating in the soft X-ray and vacuum UV spectral regions, at wavelengths from 10 to 60 nm. Thermal calculations are presented for the heating of ultrathin layers of organic films and thin-film support substrates during the sputter deposition of aluminium or other functional materials. The paper discusses approaches for cooling thinfilm composites during the sputter deposition process and the service of the filters in experiments and gives a brief overview of the works that utilised filters produced by the described technique on microstructured substrates, including orbital solar X-ray research in the framework of the CORONAS programme and laboratory laser plasma experiments.

Atomic layer deposition synthesized TiO{sub x} thin films and their application as microbolometer active materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanrikulu, Mahmud Yusuf, E-mail: mytanrikulu@adanabtu.edu.tr; Rasouli, Hamid Reza; Ghaffari, Mohammad

2016-05-15

This paper demonstrates the possible usage of TiO{sub x} thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as −9%/K near room temperature is obtained. The noise properties of TiO{sub x} films are characterized. It is shown that TiO{sub x} films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications.

Direct X-ray photoconversion in flexible organic thin film devices operated below 1 V

PubMed Central

Basiricò, Laura; Ciavatti, Andrea; Cramer, Tobias; Cosseddu, Piero; Bonfiglio, Annalisa; Fraboni, Beatrice

2016-01-01

The application of organic electronic materials for the detection of ionizing radiations is very appealing thanks to their mechanical flexibility, low-cost and simple processing in comparison to their inorganic counterpart. In this work we investigate the direct X-ray photoconversion process in organic thin film photoconductors. The devices are realized by drop casting solution-processed bis-(triisopropylsilylethynyl)pentacene (TIPS-pentacene) onto flexible plastic substrates patterned with metal electrodes; they exhibit a strong sensitivity to X-rays despite the low X-ray photon absorption typical of low-Z organic materials. We propose a model, based on the accumulation of photogenerated charges and photoconductive gain, able to describe the magnitude as well as the dynamics of the X-ray-induced photocurrent. This finding allows us to fabricate and test a flexible 2 × 2 pixelated X-ray detector operating at 0.2 V, with gain and sensitivity up to 4.7 × 104 and 77,000 nC mGy−1 cm−3, respectively. PMID:27708274

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

NASA Astrophysics Data System (ADS)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

Studies of morphological instability and defect formation in heteroepitaxial Si(1-x)Ge(x) thin films via controlled annealing experiments

NASA Astrophysics Data System (ADS)

Ozkan, Cengiz Sinan

Strained layer semiconductor structures provide possibilities for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows commensurately with a misfit strain that can be accommodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In addition, in the absence of a capping layer, Sisb{1-x}Gesb{x} films exhibit surface roughening via surface diffusion under the effect of a compressive stress which is caused by a lattice mismatch. Surface roughening takes place in the form of ridges aligned along {<}100{>} or {<}110{>} directions depending on the film thickness and the rate of strain relief. Recent work has shown that surface roughening makes a very significant contribution to strain relaxation in heteroepitaxial thin films. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation, such as stacking faults and 90sp° dislocations. In addition, capping layers with suitable thickness will surpress surface roughening and keep most of the strain in the film. We study surface roughening and defect formation by conducting controlled annealing experiments on initially flat and defect free films grown by LPCVD in a hydrogen ambient. We study films with both subcritical and supercritical thicknesses. In addition, we compare the relaxation behaviour of capped and uncapped films where surface roughening was inhibited in films with a capping layer. TEM and AFM studies were conducted to study the morphology and microstructure of these films. X-ray diffraction measurements were made to determine the amount of strain relaxation in these films. Further studies of surface roughening on heteroepitaxial films under a positive biaxial

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Towards ALD thin film stabilized single-atom Pd 1 catalysts

DOE PAGES

Piernavieja-Hermida, Mar; Lu, Zheng; White, Anderson; ...

2016-07-27

Supported precious metal single-atom catalysts have shown interesting activity and selectivity in recent studies. However, agglomeration of these highly mobile mononuclear surface species can eliminate their unique catalytic properties. In this paper, we study a strategy for synthesizing thin film stabilized single-atom Pd 1 catalysts using atomic layer deposition (ALD). The thermal stability of the Pd 1 catalysts is significantly enhanced by creating a nanocavity thin film structure. In situ infrared spectroscopy and Pd K-edge X-ray absorption spectroscopy (XAS) revealed that the Pd 1 was anchored on the surface through chlorine sites. The thin film stabilized Pd 1 catalysts weremore » thermally stable under both oxidation and reduction conditions. The catalytic performance in the methanol decomposition reaction is found to depend on the thickness of protecting layers. While Pd 1 catalysts showed promising activity at low temperature in a methanol decomposition reaction, 14 cycle TiO 2 protected Pd 1 was less active at high temperature. Pd L 3 edge XAS indicated that the low reactivity compared with Pd nanoparticles is due to the strong adsorption of carbon monoxide even at 250 °C. Lastly, these results clearly show that the ALD nanocavities provide a basis for future design of single-atom catalysts that are highly efficient and stable.« less

Crystallographic and magnetic properties of sol-gel synthesized T xCo 1-xFe 2O 4 (T=Mn and Cr) thin films

NASA Astrophysics Data System (ADS)

Kim, Kwang Joo; Kyung Kim, Hee; Ran Park, Young; Choi, Seung-li; Eun Kim, Sung; Jung Lee, Hee; Yun Park, Jae; Jin Kim, Sam

Effects of Mn and Cr substitution for Co on crystallographic and magnetic properties of inverse-spinel CoFe 2O 4 thin films were investigated. The crystal structure of the samples remain cubic for x<1 with the lattice constant ( a0) increasing with x for Mn doping and remaining constant for Cr doping. Tetrahedral Fe 2+ ions were detected in Cr xCo 1-xFe 2O 4 by Mössbauer spectroscopy while no such ions existed in Mn xCo 1-xFe 2O 4. The appearance of the tetrahedral Fe 2+ ions can be explained in terms of the Cr 3+ substitution for the octahedral Co 2+ sites with the resultant charge imbalance being compensated by a reduction of the tetrahedral Fe 3+ into Fe 2+. The observed variation in a0 and magnetic properties can be partly explained in terms of Mn 2+ and Cr 3+ substitution of octahedral sites in Mn xCo 1-xFe 2O 4 and Cr xCo 1-xFe 2O 4, respectively.

Band gap modulation in magnetically doped low-defect thin films of (Bi1-xSbx)2 Te3 with minimized bulk carrier concentration

NASA Astrophysics Data System (ADS)

Maximenko, Yulia; Scipioni, Kane; Wang, Zhenyu; Katmis, Ferhat; Steiner, Charles; Weis, Adam; van Harlingen, Dale; Madhavan, Vidya

Topological insulators Bi2Te3 and Sb2Te3 are promising materials for electronics, but both are naturally prone to vacancies and anti-site defects that move the Fermi energy onto the bulk bands. Fabricating (Bi1-xSbx)2 Te3 (BST) with the tuned x minimizes point defects and unmasks topological surface states by reducing bulk carriers. BST thin films have shown topological surface states and quantum anomalous Hall effect. However, different studies reported variable Sb:Bi ratios used to grow an undoped BST film. Here, we develop a reliable way to grow defect-free subnanometer-flat BST thin films having the Fermi energy tuned to the Dirac point. High-resolution scanning tunneling microscopy (STM) and Landau level spectroscopy prove the importance of crystallinity and surface roughness-not only Sb:Bi ratio-for the final bulk carrier concentration. The BST thin films were doped with Cr and studied with STM with atomic resolution. Counterintuitively, Cr density is anticorrelated with the local band gap due to Cr's antiferromagnetic order. We analyze the correlations and report the relevant band gap values. Predictably, high external magnetic field compromises antiferromagnetic order, and the local band gap increases. US DOE DE-SC0014335; Moore Found. GBMF4860; F. Seitz MRL.

Perovskite phase thin films and method of making

DOEpatents

Boyle, Timothy J.; Rodriguez, Mark A.

2000-01-01

The present invention comprises perovskite-phase thin films, of the general formula A.sub.x B.sub.y O.sub.3 on a substrate, wherein A is selected from beryllium, magnesium, calcium, strontium, and barium or a combination thereof; B is selected from niobium and tantalum or a combination thereof; and x and y are mole fractions between approximately 0.8 and 1.2. More particularly, A is strontium or barium or a combination thereof and B is niobium or tantalum or a combination thereof. Also provided is a method of making a perovskite-phase thin film, comprising combining at least one element-A-containing compound, wherein A is selected from beryllium, magnesium, calcium, strontium or barium, with at least one element-B-containing compound, wherein B niobium or tantalum, to form a solution; adding a solvent to said solution to form another solution; spin-coating the solution onto a substrate to form a thin film; and heating the film to form the perovskite-phase thin film.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

NASA Astrophysics Data System (ADS)

Dobročka, E.; Novák, P.; Búc, D.; Harmatha, L.; Murín, J.

2017-02-01

Residual stresses are commonly generated in thin films during the deposition process and can influence the film properties. Among a number of techniques developed for stress analysis, X-ray diffraction methods, especially the grazing incidence set-up, are of special importance due to their capability to analyze the stresses in very thin layers as well as to investigate the depth variation of the stresses. In this contribution a method combining multiple {hkl} and multiple χ modes of X-ray diffraction stress analysis in grazing incidence set-up is used for the measurement of residual stress in strongly textured ZnO thin films. The method improves the precision of the stress evaluation in textured samples. Because the measurements are performed at very low incidence angles, the effect of refraction of X-rays on the measured stress is analyzed in details for the general case of non-coplanar geometry. It is shown that this effect cannot be neglected if the angle of incidence approaches the critical angle. The X-ray stress factors are calculated for hexagonal fiber-textured ZnO for the Reuss model of grain-interaction and the effect of texture on the stress factors is analyzed. The texture in the layer is modelled by Gaussian distribution function. Numerical results indicate that in the process of stress evaluation the Reuss model can be replaced by much simpler crystallite group method if the standard deviation of Gaussian describing the texture is less than 6°. The results can be adapted for fiber-textured films of various hexagonal materials.

Positron annihilation and X-ray diffraction studies on tin oxide thin films

NASA Astrophysics Data System (ADS)

Prabakar, K.; Abhaya, S.; Krishnan, R.; Kalavathi, S.; Dash, S.; Jayapandian, J.; Amarendra, G.

2009-04-01

Positron annihilation spectroscopy along with glancing incidence X-ray diffraction have been used to investigate tin oxide thin films grown on Si by pulsed laser deposition. The films were prepared at room temperature and at 670 K under oxygen partial pressure. As-grown samples are amorphous and are found to contain large concentration of open volume sites (vacancy defects). Post-deposition annealing of as-grown samples at 970 K is found to drastically reduce the number of open volume sites and the film becomes crystalline. However, film grown under elevated temperature and under partial pressure of oxygen is found to exhibit a lower S-parameter, indicating lower defect concentration. Based on the analysis of experimental positron annihilation results, the defect-sensitive S-parameter and the overlayer thickness of tin oxide thin films are deduced. S- W correlation plots exhibit distinct positron trapping defect states in three samples.

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

PubMed

Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

2015-01-28

Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Ferromagnetic thin films

DOEpatents

Krishnan, K.M.

1994-12-20

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

Hard X-ray photoelectron spectroscopy of Li{sub x}Ni{sub 1−x}O epitaxial thin films with a high lithium content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumara, L. S. R., E-mail: KUMARA.Rosantha@nims.go.jp; Yang, Anli; Sakata, Osami, E-mail: SAKATA.Osami@nims.go.jp

2014-07-28

The core-level and valence-band electronic structures of Li{sub x}Ni{sub 1−x}O epitaxial thin films with x = 0, 0.27, and 0.48 were studied by hard X-ray photoelectron spectroscopy. A double peak structure, consisting of a main peak and a shoulder peak, and a satellite structure were observed in the Ni 2p{sub 3/2} core-level spectra. The intensity ratio of the shoulder to main peak in this double peak structure increased with increasing lithium content in Li{sub x}Ni{sub 1−x}O. This lithium doping dependence of the Ni 2p{sub 3/2} core-level spectra was investigated using an extended cluster model, which included the Zhang–Rice (ZR) doubletmore » bound states arising from a competition between O 2p – Ni 3d hybridization and the Ni on-site Coulomb interaction. The results indicated that the change in the intensity ratio in the main peak is because of a reduction in the ZR doublet bound states from lithium substitutions. This strongly suggests that holes compensating Li doping in Li{sub x}Ni{sub 1−x}O are of primarily ZR character.« less

Electronic and magnetic transitions in perovskite SrRu{sub 1-x}Ir{sub x}O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Abhijit; Lee, Yong Woo; Jeong, Yoon Hee, E-mail: yhj@postech.ac.kr

2015-09-07

We have investigated the electronic and magnetic properties of perovskite SrRu{sub 1−x}Ir{sub x}O{sub 3} (0.0≤ x ≤ 0.25) thin films grown by pulsed laser deposition on atomically flat (001) SrTiO{sub 3} substrates. SrRuO{sub 3} has the properties of a ferromagnetic metal (resistivity ρ ∼ 200 μΩ · cm at T = 300 K) with Curie temperature T{sub C} ∼ 150 K. Substituting Ir (5d{sup 5+}) for Ru (4d{sup 4+}) in SrRuO{sub 3}, films (0.0 ≤ x ≤ 0.20) showed fully metallic behavior and ferromagnetic ordering, although ρ increased and the ferromagnetic T{sub C} decreased. Films with x = 0.25 underwent the metal-to-insulator transition (T{sub MIT}∼75 K) in ρ, and spin-glass-like ordering (T{sub SG}∼45 K) with the elimination of ferromagnetic long-range ordering causedmore » by the electron localization at the substitution sites. In ferromagnetic films (0.0 ≤ x ≤ 0.20), ρ increased near-linearly with T at T > T{sub C}, but in paramagnetic film (x = 0.25) ρ increased as T{sup 3/2} at T > T{sub MIT}. Moreover, observed spin-glass-like (T{sub SG}) ordering with the negative magnetoresistance at T < T{sub MIT} in film with x = 0.25 validates the hypothesis that (Anderson) localization favors glassy ordering at amply disorder limit. These observations provide a promising approach for future applications and of fundamental interest in 4d and 5d mixed perovskites.« less

Thin-film-based scintillators for hard x-ray microimaging detectors: the ScinTAX Project

NASA Astrophysics Data System (ADS)

Rack, A.; Cecilia, A.; Douissard, P.-A.; Dupré, K.; Wesemann, V.; Baumbach, T.; Couchaud, M.; Rochet, X.; Riesemeier, H.; Radtke, M.; Martin, T.

2014-09-01

The project ScinTAX developed novel thin scintillating films for the application in high performance X-ray imaging and subsequent introduced new X-ray detectors to the market. To achieve this aim lutetium orthosilicate (LSO) scintillators doped with different activators were grown successfully by liquid phase epitaxy. The high density of LSO (7.4 g/cm3), the effective atomic number (65.2) and the high light yield make this scintillator highly applicable for indirect X-ray detection in which the ionizing radiation is converted into visible light and then registered by a digital detector. A modular indirect detection system has been developed to fully exploit the potential of this thin film scintillator for radiographic and tomographic imaging. The system is compatible for high-resolution imaging with moderate dose as well as adaptable to intense high-dose applications where radiation hard microimaging detectors are required. This proceedings article shall review the achieved performances and technical details on this high-resolution detector system which is now available. A selected example application demonstrates the great potential of the optimized detector system for hard X-ray microimaging, i.e. either to improve image contrast due to the availability of efficient thin crystal films or to reduce the dose to the sample.

Surface Morphology of Liquid and Solid Thin Films via X-Ray Reflectivity.

NASA Astrophysics Data System (ADS)

Shindler, Joseph Daniel

X-ray reflectivity can be used to measure the spatial variations in the electron density on length scales from Angstroms to microns. It is sensitive to atomic scale roughness, interdiffusion in buried layers, the thickness of multilayer stacks, and in-plane correlations in each of these cases. We have pioneered the use of a high intensity, moderate resolution configuration for x-ray reflectivity which utilizes a bent crystal graphite monochromator. With this technique we can obtain a beam intensity one hundred times greater than is possible using the high resolution rotating anode configuration, while we have shown that the resulting instrumental resolution is appropriate for the vast majority of thin film work. For all of the systems studied, we were able to measure the weak diffuse scattering signal to probe the in-plane length scales of interfacial roughness, a measurement which had previously only been attempted at synchrotron sources. Studied systems include thin films and surfaces with a wide range of structural order and surface morphologies. Interest in liquid films has been of a fundamental nature. Theories on the expected film evolution with changing thickness and temperature are currently being tested with scattering experiments. We have pursued the issues of film/substrate wetting and conformality, focussing on the temperature dependence of these phenomena near the triple point. Despite the heterogeneity of the substrate potential, we see a very sharp wetting transition at or near the triple point, although below the triple point the film is still smooth, consistent with a uniform layer. We also see a loss of conformality as the fluid films thicken; this is consistent with theory and with other recent experiments. The properties of a multilayer solid film depend not only on the magnitude of the roughness of each interface, but also on the conformality between interfaces and the length scales of the roughness--i.e., whether the roughness is on the atomic

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

NASA Technical Reports Server (NTRS)

VanKeuls, F. W.; Mueller, C. H.; Romanofsky, R. R.; Warner, J. D.; Miranda, F. A.; Jiang, H.

2002-01-01

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

Structural and electrical properties of CZTS thin films by electrodeposition

NASA Astrophysics Data System (ADS)

Rao, M. C.; Basha, Sk. Shahenoor

2018-06-01

CZTS (Cu2ZnSnS4) thin films were coated on ITO glass substrates by single bath electrodeposition technique. The prepared films were subsequently characterized by XRD, SEM, FTIR, UV-visible spectroscopy and Raman studies. The thickness of the thin films was measured by wedge method. X-ray diffraction studies revealed the formation of polycrystalline phase. The morphological surface of the prepared thin films was examined by SEM and AFM and showed the presence of microcrystals on the surface of the samples. The elemental analysis and their compositional ratios present in the samples were confirmed by the energy dispersive X-ray analysis. Functional groups and the position of band structure involved in the materials were confirmed by FTIR. Optical absorption studies were performed on the prepared thin films in the wavelength ranging from 300 to 1000 nm and the energy bandgap values were found to be in the range from 1.39 to 1.60 eV. Raman spectral peak which was observed at 360 cm-1 correspond to kesterite phase, was formed due to the vibration of the molecules. Electrical measurements confirmed the nature of the thin film depending on the charge concentration present in the samples.

Microstructural and magneto-transport characterization of Bi2SexTe3-x topological insulator thin films grown by pulsed laser deposition method

NASA Astrophysics Data System (ADS)

Jin, Zhenghe; Kumar, Raj; Hunte, Frank; Narayan, Jay; Kim, Ki Wook; North Carolina State University Team

Bi2SexTe3-x topological insulator thin films were grown on Al2O3 (0001) substrate by pulsed laser deposition (PLD). XRD and other structural characterization measurements confirm the growth of the textured Bi2SexTe3-x thin films on Al2O3 substrate. The magneto-transport properties of thick and thin Þlms were investigated to study the effect of thickness on the topological insulator properties of the Bi2SexTe3 - x films. A pronounced semiconducting behavior with a highly insulating ground state was observed in the resistivity vs. temperature data. The presence of the weak anti-localization (WAL) effect with a sharp cusp in the magnetoresistance measurements confirms the 2-D surface transport originating from the TSS in Bi2SexTe3-x TI films. A high fraction of surface transport is observed in the Bi2SexTe3-x TI thin films which decreases in Bi2SexTe3-x TI thick films. The Cosine (θ) dependence of the WAL effect supports the observation of a high proportion of 2-D surface state contribution to overall transport properties of the Bi2SexTe3-x TI thin films. Our results show promise that high quality Bi2SexTe3-x TI thin films with significant surface transport can be grown by PLD method to exploit the exotic properties of the surface transport in future generation spintronic devices. This work was supported, in part, by National Science Foundation ECCS-1306400 and FAME.

Characterization of α-Fe-Free Heteroepitaxial NdFe12- x Ti x Thin-Film Materials with a Novel Cubic Laves Fe2Ti Phase

NASA Astrophysics Data System (ADS)

Hadorn, Jason Paul; Hirayama, Yusuke; Ohkubo, Tadakatsu

2018-01-01

Thin films with compositions of NdFe12 and NdFe11Ti1 were fabricated on W-buffered MgO(001) substrates of varying roughness. In this study, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films microstructurally, chemically, and crystallographically. This study revealed successful heteroepitaxial synthesis of the tetragonal NdFe12 and NdFe12- x Ti x phases in the Ti-free and Ti-containing films, respectively, both with surface-normal c-axis orientation. It also revealed the presence of other phases within the magnetic layer. The NdFe12 films contained many α-Fe particles, which preferentially precipitated at locally rough regions of the W-buffer interface. The NdFe11Ti1 film showed the ubiquitous presence of an Fe2Ti phase, which covered most of the buffer thereby preventing the formation of α-Fe. This phase was determined to have a novel Cu2Mg-type cubic Laves ( C15) crystal structure with fourfold interfacial symmetry, good coherency, and a low mismatch with the W-buffer, thus rendering itself as being an ideal interface for the heteroepitaxial synthesis of NdFe12- x Ti x crystals. It is proposed that successful application of a cubic Fe2Ti underlayer on W can contribute to the development of a fabrication strategy for NdFe12 thin films without the presence of soft magnetic α-Fe.

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

Local Plasticity of Al Thin Films as Revealed by X-Ray Microdiffraction

NASA Astrophysics Data System (ADS)

Spolenak, R.; Brown, W. L.; Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

2003-03-01

Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-μm-thick Al0.5%Cu films using a 0.8-μm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

Evolution of magnetization in epitaxial Zn1‑x Fe x O z thin films (0  ⩽  x  ⩽  0.66) grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Brachwitz, Kerstin; Böntgen, Tammo; Lenzner, Jörg; Ghosh, Kartik; Lorenz, Michael; Grundmann, Marius

2018-06-01

We demonstrate the development of phases in Zn1‑xFexOz thin films with 0  ⩽  x  ⩽  0.66, i.e. the end point phases are semiconducting ZnO for x  =  0, and ferrimagnetic zinc ferrite (ZnFe2O4) for x  =  0.66. With increasing x, the x-ray scattering intensity of the structural ZnO wurtzite phase decreases while that of the (1 1 1)-oriented ZnFe2O4 spinel phase increases. For x  >  0.4, single phase spinel layers are obtained. The enhanced formation of the spinel phase is supported by deviations from the usually expected stoichiometric transfer of chemical composition from target to thin film in pulsed laser deposition. We find that all mixed film samples show an excess of iron in relation to the target composition, independent of the growth pressure. The saturation magnetization of the samples increases with x for 0  ⩽  x  ⩽  0.66 and shows a ferrimagnetic behavior. The temperature dependence of magnetization points to Curie temperatures well above 400 K for x  ⩾  0.4. With that, the precise tuning of magnetic performance of the thin layers is possible, yielding a design degree of freedom for application-related requirements.

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

NASA Astrophysics Data System (ADS)

Postiglione, William Michael

. Specular XRD measurements confirmed highly crystalline films with narrow rocking curve FWHMs on the order of 0.05°. The optimum thickness found to maximize mobility was around 100 nm for films deposited at 8 A/min. These films exhibited room temperature mobilities in excess of 50 cm 2V-1s-1 at carrier concentrations 3 x 1020 cm-3 across 4 different substrate materials (LaAlO3, SrTiO3, GdScO3, and PrScO 3). Contrary to expectations, our findings showed no dependence of mobility on substrate mismatch, indicating that threading dislocations are either not the dominant scattering source, or that threading dislocation density in the films was constant regardless of the substrate. The highest mobility film achieved in this study, 70 cm2V -1s-1, was measured for a film grown at a considerably slower rate ( 2 A/min) and lower thickness ( 380 A). Said film was deposited on a PrScO3 (110) substrate, the most closely lattice matched substrate commercially available for BSO (-2.2% pseudo-cubic). This film showed a high out-of-plane lattice parameter from X-ray diffraction (aop = 4.158 A), suggesting a significantly strained film. This result highlights the possibility of sputtering coherent, fully strained, BSO films, far exceeding the theoretical critical thickness for misfit dislocation formation, on closely lattice matched substrates. Overall, this work validates the concept of high pressure oxygen sputtering to produce high mobility La-doped BSO films. The mobility values reported in this thesis are comparable to those found for films deposited via pulsed laser deposition in previous studies, and represent record values for sputter deposited BSO thin films.

Synthesis of Nanocrystalline SnOx (x = 1–2) Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

PubMed Central

Ebrahimiasl, Saeideh; Yunus, Wan Md. Zin Wan; Kassim, Anuar; Zainal, Zulkarnain

2011-01-01

Nanocrystalline SnOx (x = 1–2) thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light. PMID:22163690

Effects of europium content on the microstructural and ferroelectric properties of Bi4-xEuxTi3O12 thin films

NASA Astrophysics Data System (ADS)

Zheng, X. J.; He, L.; Zhou, Y. C.; Tang, M. H.

2006-12-01

The effects of europium (Eu) content on the microstructure, fatigue endurance, leakage current density, and remnant polarization (2Pr) of Bi4-xEuxTi3O12 (BET) thin films prepared by metal-organic decomposition method at 700°C annealing temperature were studied in detail. The results showed that 2Pr (82μC/cm2 under 300kV/cm), fatigue endurance (2% loss of 2Pr after 9.0×109 switching cycles), and leakage current density (1×10-8A/cm2 at 200kV/cm) of BET thin film with x =0.85 are better than those of thin films with other contents. Additionally, the mechanism concerning the dependence of ferroelectric properties on Eu content was discussed.

Study the Effect of Substrate Temperature on Structural and Electrical Properties of Electron Beam Evaporated In{sub 1−x}Sb{sub x} Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahul, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Vishwakarma, S. R., E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com; Verma, Aneet Kumar, E-mail: rhl.jaunpur@gmail, E-mail: srvfzb@rediffmail.com

2011-10-20

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared and high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10{sup −5} torr using prepared non‐stoichiometric InSb powder using formula In{sub 1−x}Sb{sub x}(0.2

Method of forming a dielectric thin film having low loss composition of Ba.sub.x Sr.sub.y Ca.sub.1-x-y TiO.sub.3 : Ba.sub.0.12-0.25 Sr.sub.0.35-0.47 Ca.sub.0.32-0.53 TiO.sub.3

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Takeuchi, Ichiro

2000-01-01

A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba.sub.x Sr.sub.y Ca.sub.1-x-y)TiO.sub.3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE PAGES

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

2016-09-02

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Influence of Y doping concentration on the properties of nanostructured MxZn1-xO (M=Y) thin film deposited by nebulizer spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.

2014-09-01

Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.

Electronic properties and bonding in Zr Hx thin films investigated by valence-band x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Magnuson, Martin; Schmidt, Susann; Hultman, Lars; Högberg, Hans

2017-11-01

The electronic structure and chemical bonding in reactively magnetron sputtered Zr Hx (x =0.15 , 0.30, 1.16) thin films with oxygen content as low as 0.2 at.% are investigated by 4d valence band, shallow 4p core-level, and 3d core-level x-ray photoelectron spectroscopy. With increasing hydrogen content, we observe significant reduction of the 4d valence states close to the Fermi level as a result of redistribution of intensity toward the H 1s-Zr 4d hybridization region at ˜6 eV below the Fermi level. For low hydrogen content (x =0.15 , 0.30), the films consist of a superposition of hexagonal closest-packed metal (α phase) and understoichiometric δ -Zr Hx (Ca F2 -type structure) phases, while for x =1.16 , the films form single-phase Zr Hx that largely resembles that of stoichiometric δ -Zr H2 phase. We show that the cubic δ -Zr Hx phase is metastable as thin film up to x =1.16 , while for higher H contents the structure is predicted to be tetragonally distorted. For the investigated Zr H1.16 film, we find chemical shifts of 0.68 and 0.51 eV toward higher binding energies for the Zr 4 p3 /2 and 3 d5 /2 peak positions, respectively. Compared to the Zr metal binding energies of 27.26 and 178.87 eV, this signifies a charge transfer from Zr to H atoms. The change in the electronic structure, spectral line shapes, and chemical shifts as a function of hydrogen content is discussed in relation to the charge transfer from Zr to H that affects the conductivity by charge redistribution in the valence band.

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

NASA Astrophysics Data System (ADS)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Quaternary schematics for property engineering of CdSe thin films

NASA Astrophysics Data System (ADS)

Chavan, G. T.; Pawar, S. T.; Prakshale, V. M.; Sikora, A.; Pawar, S. M.; Chaure, N. B.; Kamble, S. S.; Maldar, N. N.; Deshmukh, L. P.

2017-12-01

The synthesis of quaternary Cd1-xZnxSySe1-y (0 ≤ x = y ≤ 0.35) thin films was done through indigenously developed chemical solution growth process. As-obtained thin films were subjected to the physical, chemical, structural and optical characterizations. The nearly hydrophobic nature of the as-deposited films except binary CdSe was observed through the wettability studies. The colorimetric studies supported a change in physical color attributes. The elemental analysis done confirmed the formation of Cd(Zn, S)Se and the chemical states of constituent elements as Cd2+, Zn2+, S2- and Se2-. Structural assessment suggested the formation of the polycrystalline quaternary phase of the hexagonal wurtzite structure. The Raman spectroscopy was also employed for the confirmation studies on Cd1-xZnxSySe1-y thin films. Morphological observations indicated microstructural transformation from an aggregated bunch of nano-sized globular grains into a rhomboid network of petal/flakes like crystallites. The atomic force micrographs (AFM) revealed the enhancement in the hillock structures. From advanced AFM characterizations, we observed that the CdSe thin film has leptokurtic (Sku = 3.23) surface, whereas, quaternary Cd(Zn, S)Se films have platykurtic (Sku < 3) surface. The orientation of the surface morphology was observed through the angular spectrum studies. The optical absorption studies revealed direct allowed transition for the films with a continuous modulation of the energy bandgap from 1.8 eV to 2.31 eV.

A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

PubMed

Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

2016-10-26

Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties, and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultrasmall particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH 3 NH 3 PbI 2 X (X = Cl, Br, and I) perovskite QDs fabrication. By introducing the PbI 2 and CH 3 NH 3 X (MAX) precursors into MOF HKUST-1 (Cu 3 (BTC) 2 , BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulting perovskite MAPbI 2 X (X = Cl, Br, and I) QDs with uniform diameters of 1.5-2 nm match the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

Effects of gamma-ray irradiation on the optical properties of amorphous Se100-xHgx thin films

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Islam, Shama; Nasir, Mohd.; Asokan, K.; Zulfequar, M.

2018-06-01

In this study, the thermal quenching technique was employed to prepare bulk samples of Se100-xHgx (x = 0, 5, 10, 15). Thin films with a thickness of ∼250 nm were deposited on glass substrates using the thermal evaporation technique. These films were irradiated with gamma rays at doses of 25-100 kGy. The elemental compositions of the as-deposited thin films were confirmed by energy dispersive X-ray analysis and Rutherford backscattering spectrometry. X-ray diffraction analysis confirmed the crystalline nature of these thin films upto the dose of 75 kGy. Fourier transform-infrared spectroscopy showed that the concentration of defects decreased after gamma irradiation. Microstructural analysis by field emission scanning electron microscopy indicated that the grain size increases after irradiation. Optical study based on spectrophotometry showed that the optical band gap values of these films increase after the addition of Hg whereas they decrease after gamma irradiation. We found that the absorption coefficient increases with doses up to 75 kGy but decreases at higher doses. These remarkable shifts in the optical band gap and absorption coefficient values are interpreted in terms of the creation and annihilation of defects, which are the main effects produced by gamma irradiation.

Depth resolved compositional analysis of aluminium oxide thin film using non-destructive soft x-ray reflectivity technique

NASA Astrophysics Data System (ADS)

Sinha, Mangalika; Modi, Mohammed H.

2017-10-01

In-depth compositional analysis of 240 Å thick aluminium oxide thin film has been carried out using soft x-ray reflectivity (SXR) and x-ray photoelectron spectroscopy technique (XPS). The compositional details of the film is estimated by modelling the optical index profile obtained from the SXR measurements over 60-200 Å wavelength region. The SXR measurements are carried out at Indus-1 reflectivity beamline. The method suggests that the principal film region is comprised of Al2O3 and AlOx (x = 1.6) phases whereas the interface region comprised of SiO2 and AlOx (x = 1.6) mixture. The soft x-ray reflectivity technique combined with XPS measurements explains the compositional details of principal layer. Since the interface region cannot be analyzed with the XPS technique in a non-destructive manner in such a case the SXR technique is a powerful tool for nondestructive compositional analysis of interface region.

Thin film atomic hydrogen detectors

NASA Technical Reports Server (NTRS)

Gruber, C. L.

1977-01-01

Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

In Situ Stress Evolution in Li 1+x Mn 2 O 4 Thin Films during Electrochemical Cycling in Li-Ion Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheth, Jay; Karan, Naba K.; Abraham, Daniel P.

2016-01-01

Real time monitoring of stress evolution in electrodes during electrochemical cycling can help quantify the driving forces that dictate their mechanical degradation. In the present work, in-situ stress evolution in thin films of spinel Li 1+x Mn 2 O 4 (LMO) was measured by monitoring the change in the elastic substrate curvature during electrochemical cycling in a specially designed beaker cell in the 3.5–4.3 V (vs. Li/Li+) voltage range. The LMO thin films were prepared using a solution deposition technique and their structures and morphologies were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The stressmore » evolution in the early part of the first delithiation cycle (<4.05 V) was consistent with the XRD data. However, stress evolution during later stages of the first delithiation cycle (>4.05 V) was not consistent with the XRD results, and showed irreversible behavior, suggesting irreversible changes in the electrode. Beyond the first delithiation cycle, the stress evolution was reversible, with a steady buildup of compressive and tensile stress during lithium insertion and extraction, respectively. Measurements on LMO films of varying thicknesses suggest that the first cycle irreversibility in stress response arises primarily from the electrode bulk.« less

High efficiency microcolumnar Lu2O3:Eu scintillator thin film for hard X-ray microtomography

NASA Astrophysics Data System (ADS)

Marton, Z.; Bhandari, H. B.; Brecher, C.; Miller, S. R.; Singh, B.; Nagarkar, V. V.

2013-03-01

We have developed microstructured Lu2O3:Eu scintillator films capable of providing spatial resolution on the order of micrometers for hard X-ray imaging. In addition to their extraordinary resolution, Lu2O3:Eu films simultaneously provide high absorption efficiency for 20 to 100 keV X-rays, and bright 610 nm emission, with intensity rivalling that of the brightest known scintillators. At present, high spatial resolution of such a magnitude is achieved using ultra-thin scintillators measuring only about 1 to 5 μm in thickness, which limits absorption efficiency to ~3% for 12 keV X-rays and less than 0.1% for 20 to 100 keV X-rays, resulting in excessive measurement time and exposure to the specimen. Lu2O3:Eu would significantly improve that (99.9% @12 keV and 30% @ 70 keV). Important properties and features of our Lu2O3:Eu scintillator material, fabricated by our electron-beam physical vapour deposition (EB-PVD) process, combines superior density of 9.5 g/cm3, microcolumnar structure emitting 48000 photons/MeV whose wavelength is an ideal match for the underlying CCD detector array. We grew thin films measuring 5-50μm in thickness as well as covering areas up to 5 × 5 cm2 which can be a suitable basis for microtomography, digital radiography as well as CT and hard X-ray Micro-Tomography (XMT).

Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Huang, Shi-Hua; Liu, Jian

2014-05-01

Si-rich Si1—xCx /SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 °C. The influences of annealing temperature (Ta) on the formation of Si and/or SiC nanocrystals (NCs) and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectrometry (FT-IR), current—voltage (I—V) technique, and capacitance-voltage (C—V) technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for Ta >= 800 °C. At annealing temperatures of 1000 °C or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si—C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si—C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C—V and I—V results indicate that the interface quality of Si1—xCx/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for Ta >= 1000 °C, which can be ascribed to the formation of Si and SiC NCs.

Optical investigation of vacuum evaporated Se80-xTe20Sbx (x = 0, 6, 12) amorphous thin films

NASA Astrophysics Data System (ADS)

Deepika; Singh, Hukum

2017-09-01

Amorphous thin films of Se80-xTe20Sbx (x = 0, 6, 12) chalcogenide glasses has been deposited onto pre-cleaned glass substrate using thermal evaporation technique under a vacuum of 10-5 Torr. The absorption and transmission spectra of these thin films have been recorded using UV spectrophotometer in the spectral range 400-2500 nm at room temperature. Swanepoel envelope method has been employed to obtain film thickness and optical constants such as refractive index, extinction coefficient and dielectric constant. The optical band gap of the samples has been calculated using Tauc relation. The study reveals that optical band gap decreases on increase in Sb content. This is due to decrease in average single bond energy calculated using chemical bond approach. The values of urbach energy has also been computed to support the above observation. Variation of refractive index has also been studies in terms of wavelength and energy using WDD model and values of single oscillator energy and dispersion energy has been obtained.

Structural and magnetic properties of sol-gel Co2xNi0.5-x Zn0.5-xFe2O4 thin films

NASA Astrophysics Data System (ADS)

Rebrov, Evgeny V.; Gao, Pengzhao; Verhoeven, Tiny M. W. G. M.; Schouten, Jaap C.; Kleismit, Richard; Turgut, Zafer; Kozlowski, Gregory

2011-03-01

Nanocrystalline Co2xNi0.5-xZn0.5-xFe2O4 (x=0-0.5) thin films have been synthesized with various grain sizes by a sol-gel method on polycrystalline silicon substrates. The morphology as well as magnetic and microwave absorption properties of the films calcined at 1073 K were studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and vibrating sample magnetometry. All films were uniform without microcracks. The Co content in the Co-Ni-Zn films resulted in a grain size ranging from 15 to 32 nm while it ranged from 33 to 49 nm in the corresponding powders. Saturation and remnant magnetization increased with increase in grain size, while coercivity demonstrated a drop due to multidomain behavior of crystallites for a given value of x. Saturation magnetization increased and remnant magnetization had a maximum as a function of grain size independent of x. In turn, coercivity increased with x independent of grain size. Complex permittivity of the Co-Ni-Zn ferrite films was measured in the frequency range 2-15 GHz. The highest hysteretic heating rate in the temperature range 315-355 K was observed in CoFe2O4. The maximum absorption band shifted from 13 to 11 GHz as cobalt content increased from x=0.1 to 0.2.

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE PAGES

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun; ...

2017-08-30

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

Dewetting of thin polymer films: an X-ray scattering study

NASA Astrophysics Data System (ADS)

Müller-Buschbaum, P.; Stamm, M.

1998-06-01

The surface morphology of different dewetting states of thin polymer films (polystyrene) on top of silicon substrates was investigated. With diffuse X-ray scattering in the region of total external reflection a high in-plane resolution was achieved. We observe a new nano-dewetting structure which coexists with the well known mesoscopic dewetting structures of holes, cellular pattern and drops. This nano-dewetting structure consists of small dimples with a diameter in the nanometer range. It results from the dewetting of a remaining ultra-thin polymer layer and can be explained with theoretical predictions of spinodal decomposition. The experimental results of the scattering study are confirmed with scanning-force microscopy measurements.

Combinatorial studies of (1-x)Na0.5Bi0.5TiO3-xBaTiO3 thin-film chips

NASA Astrophysics Data System (ADS)

Cheng, Hong-Wei; Zhang, Xue-Jin; Zhang, Shan-Tao; Feng, Yan; Chen, Yan-Feng; Liu, Zhi-Guo; Cheng, Guang-Xi

2004-09-01

Applying a combinatorial methodology, (1-x)Na0.5Bi0.5TiO3-xBaTiO3 (NBT-BT) thin-film chips were fabricated on (001)-LaAlO3 substrates by pulsed laser deposition with a few quaternary masks. A series of NBT-BT library with the composition of BT ranged from 0 to 44% was obtained with uniform composition and well crystallinity. The relation between the concentration of NBT-BT and their structural and dielectric properties were investigated by x-ray diffraction (XRD), evanescent microwave probe, atomic force microscopy, and Raman spectroscopy. An obvious morphotropic phase boundary (MPB) was established to be about 9% BT by XRD, Raman frequency shift, and dielectric anomaly, different from the well-known MPB of the materials. The result shows the high efficiency of combinatorial method in searching new relaxor ferroelectrics.

Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

NASA Astrophysics Data System (ADS)

Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

1995-09-01

Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

Materials Study of NbN and Ta x N Thin Films for SNS Josephson Junctions

DOE PAGES

Missert, Nancy; Brunke, Lyle; Henry, Michael D.; ...

2017-02-15

We investigated properties of NbN and Ta xN thin films grown at ambient temperatures on SiO 2/Si substrates by reactive-pulsed laser deposition and reactive magnetron sputtering (MS) as a function of N 2 gas flow. Both techniques produced films with smooth surfaces, where the surface roughness did not depend on the N 2 gas flow during growth. High crystalline quality, (111) oriented NbN films with T c up to 11 K were produced by both techniques for N contents near 50%. The low temperature transport properties of the Ta xN films depended upon both the N 2 partial pressure usedmore » during growth and the film thickness. Furthermore, the root mean square surface roughness of Ta xN films grown by MS increased as the film thickness decreased down to 10 nm.« less

Altering properties of cerium oxide thin films by Rh doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz; NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148; Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz

2015-07-15

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffractionmore » techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.« less

Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming; Shvydko, Yury; Stoupin, Stanislav

A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with themore » thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.« less

Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

NASA Astrophysics Data System (ADS)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Sizes of X-ray radiation coherent domains in thin SmS films and their visualization

NASA Astrophysics Data System (ADS)

Sharenkova, N. V.; Kaminskii, V. V.; Petrov, S. N.

2011-09-01

The size of X-ray radiation coherent domains (250 ± 20 Å) is determined in a thin polycrystalline SmS film using X-ray diffraction patterns (θ-2θ scanning, DRON-2 diffractometer, Cu K α radiation) and the Selyakov-Scherrer formula with allowance for the effect of microstrains. An image of this film is taken with a transmission electron microscope, and regions with a characteristic size of 240 Å are clearly visible in it. It is concluded that X-ray radiation coherent domains are visualized.

Effect of external magnetic field on the crystal growth of nano-structured Zn xMn 1- x+ yZr yFe 2-2 yO 4 thin films

NASA Astrophysics Data System (ADS)

Anjum, Safia; Rafique, M. S.; Khaleeq-ur-Rahaman, M.; Siraj, K.; Usman, Arslan; Ahsan, A.; Naseem, S.; Khan, K.

2011-06-01

Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 and Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films with different concentrations of Mn and Zr have been deposited on single crystal n-Si (400) at room temperature (RT) by pulse laser deposition technique (PLD). The films have been deposited under two conditions: (i) with the applied external magnetic field across the propagation of the plume (ii) without applied external magnetic field ( B=0). XRD results show the films have spinel cubic structure when deposited in the presence of magnetic field. SEM and AFM observations clearly show the effect of external applied magnetic field on the growth of films in terms of small particle size, improved uniformity and lower r.m.s. roughness. Thin films deposited under the influence of external magnetic field exhibit higher magnetization as measured by the VSM. The optical band gap energy Eg, refractive index n, reflection, absorption and the thickness of the thin films were measured by spectroscopy ellipsometer. The reflection of Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films is higher than Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 thin films due to the greater concentration of Zr. The thicknesses of the thin films under the influence of external magnetic field are larger than the films grown without field for both samples. The optical band gap energy Eg decreases with increasing film thickness. The films with external magnetic field are found highly absorbing in nature due to the larger film thickness.

Surfactant mediated synthesis of bismuth selenide thin films for photoelectrochemical solar cell applications.

PubMed

Desai, Neha D; Khot, Kishorkumar V; Ghanwat, Vishvanath B; Kharade, Suvarta D; Bhosale, Popatrao N

2018-03-15

In the present report, nanostructured bismuth selenide (Bi 2 Se 3 ) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of Bi 2 Se 3 thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that Bi 2 Se 3 thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of Bi 2 Se 3 thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all Bi 2 Se 3 thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order to study the stability of Bi 2 Se 3 thin films four cycles are repeated after gap of one week each. Further PEC performance of all Bi 2 Se 3 thin films are also supported by electrochemical impedance (EIS) measurement study. Copyright © 2017 Elsevier Inc. All rights reserved.

Chemical bath deposition of II-VI compound thin films

NASA Astrophysics Data System (ADS)

Oladeji, Isaiah Olatunde

form 0.2 to 0.5 mum with improved quality. A novel chemical activated diffusion of Cd into ZnS thin film at temperature lower than 100°C is also developed. This in conjunction with thermal activated diffusion at 400°C has enabled us to synthesize Cd1-xZn xS thin films suitable for solar cells from CBD grown CdS/ZnS multilayer. The potential application of the new Cd1-xZnxS/CdS/CdTe solar cell structure is also demonstrated. The unoptimized structure grown on transparent conducting oxide coated soda lime glass of 3mm thickness with no antireflection coating yielded a 10% efficiency. This efficiency is the highest ever recorded in any Cd1-xZnxS film containing CdTe solar cells.

Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

NASA Technical Reports Server (NTRS)

Rohrer, Norman J.; To, Hing Y.; Valco, George J.; Bhasin, Kul B.; Chorey, Chris; Warner, Joseph D.

1990-01-01

There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

Characterization of SiGe thin films using a laboratory X-ray instrument.

PubMed

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-08-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

Study of microstructure and electroluminescence of zinc sulfide thin film

NASA Astrophysics Data System (ADS)

Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

1998-03-01

The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Thin film materials and devices for resistive temperature sensing applications

NASA Astrophysics Data System (ADS)

Basantani, Hitesh A.

Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have

Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

NASA Astrophysics Data System (ADS)

Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

1997-02-01

YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

NASA Technical Reports Server (NTRS)

Mei, YU; Luo, H. L.; Hu, Roger

1990-01-01

Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

Optimization of the deposition conditions and structural characterization of Y1Ba2Cu3O(7-x) thin superconducting films

NASA Technical Reports Server (NTRS)

Chrzanowski, J.; Meng-Burany, S.; Xing, W. B.; Curzon, A. E.; Heinrich, B.; Irwin, J. C.; Cragg, R. A.; Zhou, H.; Habib, F.; Angus, V.

1995-01-01

Two series of Y1Ba2Cu3O(z) thin films deposited on (001) LaAl03 single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O2) and substrate temperature of the deposition process Th, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j(sub c) and T(sub c) exhibited T(sub c) greater than or equal to 91 K and j(sub c) greater than or equal to 4 x 106 A/sq cm, at 77 K. Close correlations between the structural quality of the film, the growth parameters (p(O2), T(sub h)) and j(sub c) and T(sub c) have been found.

Microstructural and mechanical characteristics of Ni–Cr thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.

2015-06-15

Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texturemore » in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.« less

Fluorescence X-ray absorption spectroscopy using a Ge pixel array detector: application to high-temperature superconducting thin-film single crystals.

PubMed

Oyanagi, H; Tsukada, A; Naito, M; Saini, N L; Lampert, M O; Gutknecht, D; Dressler, P; Ogawa, S; Kasai, K; Mohamed, S; Fukano, A

2006-07-01

A Ge pixel array detector with 100 segments was applied to fluorescence X-ray absorption spectroscopy, probing the local structure of high-temperature superconducting thin-film single crystals (100 nm in thickness). Independent monitoring of pixel signals allows real-time inspection of artifacts owing to substrate diffractions. By optimizing the grazing-incidence angle theta and adjusting the azimuthal angle phi, smooth extended X-ray absorption fine structure (EXAFS) oscillations were obtained for strained (La,Sr)2CuO4 thin-film single crystals grown by molecular beam epitaxy. The results of EXAFS data analysis show that the local structure (CuO6 octahedron) in (La,Sr)2CuO4 thin films grown on LaSrAlO4 and SrTiO3 substrates is uniaxially distorted changing the tetragonality by approximately 5 x 10(-3) in accordance with the crystallographic lattice mismatch. It is demonstrated that the local structure of thin-film single crystals can be probed with high accuracy at low temperature without interference from substrates.

Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Suresh, P.; Suresh, R.; Ragavendar, M.

2013-07-01

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 °C using the NSP technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 Å and c = 5.2018 Å with hexagonal structure and preferential orientation along (0 0 2) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (ɛr and ɛi) and optical conductivities (σr and σi) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

Influence of oxygen on growth of carbon thin films

NASA Astrophysics Data System (ADS)

Kumar, Prabhat; Gupta, Mukul; Phase, D. M.; Stahn, Jochen

2018-04-01

In this work we studied the influence of oxygen gas on growth of carbon thin films in a magnetron sputtering process. X-ray absorption spectroscopy (XAS), x-ray and neutron reflectivity techniques were used to probe carbon thin films deposited with and without oxygen at room temperature. XAS in particularly x-ray absorption near edge spectroscopy (XANES) is powerful technique to identify the nature of hybridization of carbon atoms with other elements. In a XANES pattern, presence of C=O and C-O bonds is generally observed in spite of the fact that oxygen has not been deliberately included in the growth process. In order to confirm the presence of such features, we introduced a small amount of oxygen at 1% during the growth of carbon thin films. Though such additions do not affect the number density as observed by x-ray and neutron reflectivity, they severally affect the C K-edge spectra as evidenced by an enhancement in carbon-oxygen hybridization. Observed results are helpful in analyzing the C K-edge spectra more confidently.

Broadband Dielectric Spectroscopy of Ruddlesden-Popper Srn+1TinO3n+1 (n = 1,2,3) Thin Films

DTIC Science & Technology

2009-01-29

permittivity, strontium compounds N. D. Orloff, W. Tian, C. J. Fennie , C. H. Lee, D. Gu, J. Mateu, X. X. Xi, K. M. Rabe, D. G. Schlom, I. Takeuchi, J...of Ruddlesden–Popper Srn+1TinO3n+1 (n = 1,2,3) thin films N. D. Orloff, W. Tian, C. J. Fennie , C. H. Lee, D. Gu et al. Citation: Appl. Phys. Lett... Fennie ,4 C. H. Lee,3,5 D. Gu,2 J. Mateu,6 X. X. Xi,5 K. M. Rabe,7 D. G. Schlom,3 I. Takeuchi,1 and J. C. Booth2 1Department of Materials Science and

Self-Limited Growth in Pentacene Thin Films

PubMed Central

2017-01-01

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

Self-Limited Growth in Pentacene Thin Films.

PubMed

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Pulsed laser deposition of lithium niobate thin films

NASA Astrophysics Data System (ADS)

Canale, L.; Girault-Di Bin, C.; Cosset, F.; Bessaudou, A.; Celerier, A.; Decossas, J.-Louis; Vareille, J.-C.

2000-12-01

Pulsed laser deposition of Lithium Niobate thin films onto sapphire (0001) substrates is reported. Thin films composition and structure have been determined using Rutherford Backscattermg Spectroscopy (RBS) and X-ray diffraction ( XRD) experiments. The influe:nce of deposition parameters such as substrate temperature, oxygen pressure and target to substrate distance on the composition and the structure of the films has been studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the Li deficient phase LiNb3O8. Nearly stoichiometric thin fihns have been obtained for an oxygen pressure of 0. 1 Ton and a substrate temperature of 800°C. Under optimized conditions the (001) preferential orientation of growth, suitable for most optical applications, has been obtained.

Structure of disordered gold-polymer thin films using small angle x-ray scattering

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2010-11-01

We have investigated the structure of disordered gold-polymer thin films using small angle x-ray scattering and compared the results with the predictions of a theoretical model based on two approaches—a structure form factor approach and the generalized Porod law. The films are formed of polymer-embedded gold nanoclusters and were fabricated by very low energy gold ion implantation into polymethylmethacrylate (PMMA). The composite films span (with dose variation) the transition from electrically insulating to electrically conducting regimes, a range of interest fundamentally and technologically. We find excellent agreement with theory and show that the PMMA-Au films have monodispersive or polydispersive characteristics depending on the implanted ion dose.

Characterization of SiGe thin films using a laboratory X-ray instrument

PubMed Central

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-01-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation. PMID:24046495

Sn 1-x VxOy thin films deposited by pulsed laser ablation for gas sensing devices

NASA Astrophysics Data System (ADS)

Duhalde, Stella; Vignolo, M. F.; Quintana, G.; Mercader, R.; Lamagna, Antonino

2000-02-01

Polycrystalline pure and V-doped SnO2 thin films have been prepare by pulsed laser deposition (PLD) on Si substrates, with a Si3Ni4 buffered layer. PLD technique, under proper conditions, has probed to produce nanocrystalline-structured materials, which are suitable for gas sensing. In this work we analyze the role of V doping in the structural properties and in the electrical conductivity of the films. The deposition temperature was fixed at 600 degrees C and the films were grown in oxygen atmosphere. The films resulted nanocrystalline with 50 to 120 nm average grain size connected by necks with high surface areas. The microstructural and electronic properties of all the films were analyzed using scanning-electron microscopy, x-ray diffraction and conversion electron Moessbauer spectroscopy. Electrical conductance in a dynamic regime in dry synthetic air has been evaluated as a function of temperature. Moessbauer spectra reveal the presence of 15 percent of Sn2+ in the 5at. percent V-doped films. At about 340 degrees C, a strong increase in the conductivity of the films occurs. Possible explanations are that thermal energy could excite electrons from the vanadium ions into the crystal's conduction band or promotes the diffusion of surface oxygen vacancies towards the bulk, increasing strongly the conductivity of the film.

Growth of Bi2Se3 topological insulator thin film on Ge(1 1 1) substrate

NASA Astrophysics Data System (ADS)

Kim, Seungyeon; Lee, Sangsoo; Woo, Jeongseok; Lee, Geunseop

2018-02-01

Atomically smooth, single crystalline Bi2Se3 thin films were grown on a Ge(1 1 1) substrate using molecular beam epitaxy. Crystallinities of both the surface and the bulk as well as the stoichiometry of the grown film were characterized by using low-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and photoelectron spectroscopies. Hexagonal atomic structures, quintuple layer steps observed in STM images confirmed that the Bi2Se3 film with a (0 0 0 1) surface was grown. Diffraction peak positions as well as the chemical composition determined from the core-level photoelectron spectra coincide well with those expected for the Bi2Se3 crystal. The surface state with a Dirac cone was observed in the valence photoelectron spectra, which also support that a high-quality Bi2Se3 film was grown on the Ge(1 1 1) substrate. The interface between Ge(1 1 1) and Bi2Se3(0 0 0 1) is expected to be abrupt due to the small lattice between them.

Retrieving spin textures on curved magnetic thin films with full-field soft X-ray microscopies

DOE PAGES

Streubel, Robert; Kronast, Florian; Fischer, Peter; ...

2015-07-03

X-ray tomography is a well-established technique to characterize 3D structures in material sciences and biology; its magnetic analogue—magnetic X-ray tomography—is yet to be developed. We demonstrate the visualization and reconstruction of magnetic domain structures in a 3D curved magnetic thin films with tubular shape by means of full-field soft X-ray microscopies. In the 3D arrangement of the magnetization is retrieved from a set of 2D projections by analysing the evolution of the magnetic contrast with varying projection angle. By using reconstruction algorithms to analyse the angular evolution of 2D projections provides quantitative information about domain patterns and magnetic coupling phenomenamore » between windings of azimuthally and radially magnetized tubular objects. In conclusion, the present approach represents a first milestone towards visualizing magnetization textures of 3D curved thin films with virtually arbitrary shape.« less

Retrieving spin textures on curved magnetic thin films with full-field soft X-ray microscopies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Streubel, Robert; Kronast, Florian; Fischer, Peter

X-ray tomography is a well-established technique to characterize 3D structures in material sciences and biology; its magnetic analogue—magnetic X-ray tomography—is yet to be developed. We demonstrate the visualization and reconstruction of magnetic domain structures in a 3D curved magnetic thin films with tubular shape by means of full-field soft X-ray microscopies. In the 3D arrangement of the magnetization is retrieved from a set of 2D projections by analysing the evolution of the magnetic contrast with varying projection angle. By using reconstruction algorithms to analyse the angular evolution of 2D projections provides quantitative information about domain patterns and magnetic coupling phenomenamore » between windings of azimuthally and radially magnetized tubular objects. In conclusion, the present approach represents a first milestone towards visualizing magnetization textures of 3D curved thin films with virtually arbitrary shape.« less

Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

NASA Technical Reports Server (NTRS)

Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

2005-01-01

The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

PubMed Central

Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

2016-01-01

Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF) = 66%. PMID:28773647

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1-x)O3 thin films

NASA Astrophysics Data System (ADS)

Lappalainen, Jyrki; Lantto, Vilho; Frantti, Johannes; Hiltunen, Jussi

2006-06-01

Microstructure, film orientation, and optical transmission spectra of polycrystalline Nd-modified Pb(ZrxTi1-x)O3 films were studied as a function of film thickness. Pulsed laser deposition was used for the fabrication of films with thickness from 80to465nm on single-crystal MgO(100) substrates. Raman spectroscopy, x-ray diffraction, and spectrophotometry measurements were utilized in the film characterization. With the decreasing film thickness, films first oriented with c axis perpendicular to film surface, and then, after some critical thickness, changed to a-axis orientation. At the same time, compressive stress increased up to 1.3GPa and a clear blueshift of the optical absorption edge was found in transmission spectra.

Application of the ALE and MBE Methods to the Growth of Layered Hg sub x Cd sub 1-x Te Films.

DTIC Science & Technology

1986-09-26

films / We have studied the applicability of the Atomic Layer Epitaxy (ALE, vee Ref. -1pand Molecular Beam Epitaxy (MBE) ito growth of Hg2 Cdi- ,Te...thin- films throughout the composition range 0 x $ 0.8. The progress of the Contract has been reported periodically in five interim reports. This final...I separate sources) yielded films with high x values. On the grounds of these observations we do not find ALE suitable for growth of HgCdTe. 2) ALE

Efficient high-resolution hard x-ray imaging with transparent Lu2O3:Eu scintillator thin films

NASA Astrophysics Data System (ADS)

Marton, Zsolt; Miller, Stuart R.; Brecher, Charles; Kenesei, Peter; Moore, Matthew D.; Woods, Russell; Almer, Jonathan D.; Miceli, Antonino; Nagarkar, Vivek V.

2015-09-01

We have developed microstructured Lu2O3:Eu scintillator films that provide spatial resolution on the order of micrometers for hard X-ray imaging. In addition to their outstanding resolution, Lu2O3:Eu films also exhibits both high absorption efficiency for 20 to 100 keV X-rays, and bright 610 nm emission whose intensity rivals that of the brightest known scintillators. At present, high spatial resolution of such a magnitude is achieved using ultra-thin scintillators measuring only about 1 to 5 μm in thickness, which limits absorption efficiency to ~3% for 12 keV X-rays and less than 0.1% for 20 to 100 keV X-rays; this results in excessive measurement time and exposure to the specimen. But the absorption efficiency of Lu2O3:Eu (99.9% @12 keV and 30% @ 70 keV) is much greater, significantly decreasing measurement time and radiation exposure. Our Lu2O3:Eu scintillator material, fabricated by our electron-beam physical vapor deposition (EB-PVD) process, combines superior density of 9.5 g/cm3, a microcolumnar structure for higher spatial resolution, and a bright emission (48000 photons/MeV) whose wavelength is an ideal match for the underlying CCD detector array. We grew thin films of this material on a variety of matching substrates, measuring some 5-10μm in thickness and covering areas up to 1 x 1 cm2, which can be a suitable basis for microtomography, digital radiography as well as CT and hard X-ray Micro-Tomography (XMT). The microstructure and optical transparency of such screens was optimized, and their imaging performance was evaluated in the Argonne National Laboratory's Advanced Photon Source. Spatial resolution and efficiency were also characterized.

Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

NASA Astrophysics Data System (ADS)

Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

2017-03-01

Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1-xGaxSe2-ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (-1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Perpendicular magnetic anisotropy in amorphous NdxCo1 -x thin films studied by x-ray magnetic circular dichroism

NASA Astrophysics Data System (ADS)

Cid, R.; Alameda, J. M.; Valvidares, S. M.; Cezar, J. C.; Bencok, P.; Brookes, N. B.; Díaz, J.

2017-06-01

The origin of perpendicular magnetic anisotropy (PMA) in amorphous NdxCo1 -x thin films is investigated using x-ray magnetic circular dichroism (XMCD) spectroscopy at the Co L2 ,3 and Nd M4 ,5 edges. The magnetic orbital and spin moments of the 3 d cobalt and 4 f neodymium electrons were measured as a function of the magnetic field orientation, neodymium concentration, and temperature. In all the studied samples, the magnetic anisotropy of the neodymium subnetwork is always oriented perpendicular to the plane, whereas the anisotropy of the orbital moment of cobalt is in the basal plane. The ratio Lz/Sz of the neodymium 4 f orbitals changes with the sample orientation angle, being higher and closer to the atomic expected value at normal orientation and smaller at grazing angles. This result is well explained by assuming that the 4 f orbital is distorted by the effect of an anisotropic crystal field when it is magnetized along its hard axis, clearly indicating that the 4 f states are not rotationally invariant. The magnetic anisotropy energy associated to the neodymium subnetwork should be proportional to this distortion, which we demonstrate is accessible by applying the XMCD sum rules for the spin and intensity at the Nd M4 ,5 edges. The analysis unveils a significant portion of neodymium atoms magnetically uncoupled to cobalt, i.e., paramagnetic, confirming the inhomogeneity of the films and the presence of a highly disordered neodymium rich phase already detected by extended x-ray-absorption fine structure (EXAFS) spectroscopy. The presence of these inhomogeneities is inherent to the evaporation preparation method when the chosen concentration in the alloy is far from its eutectic concentrations. An interesting consequence of the particular way in which cobalt and neodymium segregates in this system is the enhancement of the cobalt spin moment which reaches 1.95 μB in the sample with the largest segregation.

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (1 1 1) oriented CdO thin films applicable for window layer of solar cell

NASA Astrophysics Data System (ADS)

Anitha, M.; Saravanakumar, K.; Anitha, N.; Amalraj, L.

2018-06-01

Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 °C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about >70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 × 10-4 Ω-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells.

Magnetotransport study of (Sb 1-xBi x) 2Te 3 thin films on mica substrate for ideal topological insulator

DOE PAGES

Ni, Yan; Zhang, Zhen; Nlebedim, Cajetan I.; ...

2016-02-29

In this study, we deposited high quality (Sb 1–xBi x) 2Te 3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb 0.957Bi 0.043) 2Te 3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is thenmore » determined as 0.81 × 10 16 m –2, which is lower than that of most TIs reported previously, indicating that (Sb 0.957Bi 0.043) 2Te 3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb 0.957Bi 0.043) 2Te 3 and will be helpful for designing TI-based devices.« less

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

NASA Technical Reports Server (NTRS)

Neurgaonkar, R. R.; Nelson, J. G.

1999-01-01

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Magnetic and chemical nonuniformity in Ga{sub 1-x}Mn{sub x}As films as probed by polarized neutron and x-ray reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirby, B. J.; Borchers, J. A.; Rhyne, J. J.

We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga{sub 1-x}Mn{sub x}As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization can vary drastically among as-grown Ga{sub 1-x}Mn{sub x}As films despite being deposited under seemingly similar conditions. These results imply that the depth profile of interstitial Mn is dependent not only on annealing, but is also extremely sensitive tomore » initial growth conditions. We observe that annealing improves the magnetization by producing a surface layer that is rich in Mn and O, indicating that the interstitial Mn migrates to the surface. Finally, we expand upon our previous neutron reflectivity study of Ga{sub 1-x}Mn{sub x}As, by showing how the depth profile of the chemical composition at the surface and through the film thickness is directly responsible for the complex magnetization profiles observed in both as-grown and annealed films.« less

Time-resolved analysis of the white photoluminescence from chemically synthesized SiC{sub x}O{sub y} thin films and nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabassum, Natasha; Nikas, Vasileios; Ford, Brian

2016-07-25

The study reported herein presents results on the room-temperature photoluminescence (PL) dynamics of chemically synthesized SiC{sub x}O{sub y≤1.6} (0.19 < x < 0.6) thin films and corresponding nanowire (NW) arrays. The PL decay transients of the SiC{sub x}O{sub y} films/NWs are characterized by fast luminescence decay lifetimes that span in the range of 350–950 ps, as determined from their deconvoluted PL decay spectra and their stretched-exponential recombination behavior. Complementary steady-state PL emission peak position studies for SiC{sub x}O{sub y} thin films with varying C content showed similar characteristics pertaining to the variation of their emission peak position with respect to the excitation photon energy.more » A nearly monotonic increase in the PL energy emission peak, before reaching an energy plateau, was observed with increasing excitation energy. This behavior suggests that band-tail states, related to C-Si/Si-O-C bonding, play a prominent role in the recombination of photo-generated carriers in SiC{sub x}O{sub y}. Furthermore, the PL lifetime behavior of the SiC{sub x}O{sub y} thin films and their NWs was analyzed with respect to their luminescence emission energy. An emission-energy-dependent lifetime was observed, as a result of the modulation of their band-tail states statistics with varying C content and with the reduced dimensionality of the NWs.« less

Direct bandgap materials based on the thin films of SexTe100 − x nanoparticles

PubMed Central

2012-01-01

In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices. PMID:22978714

Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Awari, N.; University of Groningen, 9747 AG Groningen; Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie

2016-07-18

Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

NASA Technical Reports Server (NTRS)

VanKeuls, Frederick W.

1999-01-01

Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

Thin-film Rechargeable Lithium Batteries for Implantable Devices

DOE R&D Accomplishments Database

Bates, J. B.; Dudney, N. J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

Thin-film rechargeable lithium batteries for implantable devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bates, J.b.; Dudney, N.J.

1997-05-01

Thin films of LiCoO{sub 2} have been synthesized in which the strongest x-ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin-film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001 %/cycle or less. The reliability and performance of Li-LiCoO{sub 2} thin-film batteries make themmore » attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.« less

Low-temperature transport properties of TaxN thin films (0.72 <= x <= 0.83)

NASA Astrophysics Data System (ADS)

Očko, Miroslav; Žonja, Sanja; Nelson, G. L.; Freericks, J. K.; Yu, Lei; Newman, N.

2010-11-01

We report on low-temperature (4-320 K) transport properties of TaxN thin films deposited on an amorphous SiO2 substrate. In this work, TaxN thin films were restricted to a narrow range of x: 0.72 <= x <= 0.83 yet show considerable and nonmonotonic variation of their transport properties with Ta concentration. This behaviour is consistent with a local minimum in the density of electronic states at the Fermi level, as calculated for the rock salt intermetallic Ta4N5, and a rigid band model for describing the transport. The temperature dependence of the resistivity is best fit to the unusual form exp(-T/T0). Interestingly enough, the fit parameter T0 correlates well with the temperature of the maximum of the corresponding thermopower. Both of these characteristics, the fit and the correlation with the thermopower, are consistent with the Jonson-Mahan many-body formalism for charge and thermal transport when one has a nontrivial temperature dependence of the chemical potential. At the lowest temperatures measured, we have also found that the resistivity and thermopower show signatures of electron-electron interactions. We discuss also our results in the light of some theories usually used for describing transport of thin films and to other experimental investigations that have been performed on TaxN.

Tensile Lattice Strain Accelerates Oxygen Surface Exchange and Diffusion in La1–xSrxCoO3−δ Thin Films

PubMed Central

2013-01-01

The influence of lattice strain on the oxygen exchange kinetics and diffusion in oxides was investigated on (100) epitaxial La1–xSrxCoO3−δ (LSC) thin films grown by pulsed laser deposition. Planar tensile and compressively strained LSC films were obtained on single-crystalline SrTiO3 and LaAlO3. 18O isotope exchange depth profiling with ToF-SIMS was employed to simultaneously measure the tracer surface exchange coefficient k* and the tracer diffusion coefficient D* in the temperature range 280–475 °C. In accordance with recent theoretical findings, much faster surface exchange (∼4 times) and diffusion (∼10 times) were observed for the tensile strained films compared to the compressively strained films in the entire temperature range. The same strain effect—tensile strain leading to higher k* and D*—was found for different LSC compositions (x = 0.2 and x = 0.4) and for surface-etched films. The temperature dependence of k* and D* is discussed with respect to the contributions of strain states, formation enthalpy of oxygen vacancies, and vacancy mobility at different temperatures. Our findings point toward the control of oxygen surface exchange and diffusion kinetics by means of lattice strain in existing mixed conducting oxides for energy conversion applications. PMID:23527691

Dependence of e31,f on polar axis texture for tetragonal Pb(Zrx,Ti1-x)O3 thin films

NASA Astrophysics Data System (ADS)

Yeager, Charles B.; Ehara, Yoshitaka; Oshima, Naoya; Funakubo, Hiroshi; Trolier-McKinstry, Susan

2014-09-01

It was shown by Ouyang et al. [Appl. Phys. Lett. 86, 152901 (2005)] that the piezoelectric e31,f coefficient is largest parallel to the spontaneous polarization in tetragonal PbZrxTi1-xO3 (PZT) films. However, the expected piezoelectric data are typically calculated from phenomenological constants derived from data on ceramic PZT. In this work, the dependence of e31,f on c-axis texture fraction, f001, for {001}PZT thin films was measured by growing films with systematically changed f001 using CaF2, MgO, SrTiO3, and Si substrates. An approximately linear increase in e31,f with f001 was observed for compositions up to 43 mol. % Zr, and 100% c-domain properties were extrapolated. It was demonstrated that c-axis PZT films can achieve e31,f exceeding -12 C/m2 for many tetragonal compositions. The energy harvesting figure of merit, e31,f2/ɛr, for c-axis PZT films surpassed 0.8 C2/m4. This is larger than the figure of merit of gradient-free PZT films grown on Si substrates by a factor of four.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Structural, Optical and Electrical Properties of ITO Thin Films

NASA Astrophysics Data System (ADS)

Sofi, A. H.; Shah, M. A.; Asokan, K.

2018-02-01

Transparent and conductive thin films of indium tin oxide were fabricated on glass substrates by the thermal evaporation technique. Tin doped indium ingots with low tin content were evaporated in vacuum (1.33 × 10-7 kpa) followed by an oxidation for 15 min in the atmosphere in the temperature range of 600-700°C. The structure and phase purity, surface morphology, optical and electrical properties of thin films were studied by x-ray diffractometry and Raman spectroscopy, scanning electron microcopy and atomic force microscopy, UV-visible spectrometry and Hall measurements in the van der Pauw configuration. The x-ray diffraction study showed the formation of the cubical phase of polycrystalline thin films. The morphological analysis showed the formation of ginger like structures and the energy dispersive x-ray spectrum confirmed the presence of indium (In), tin (Sn) and oxygen (O) elements. Hall measurements confirmed n-type conductivity of films with low electrical resistivity ( ρ) ˜ 10-3 Ω cm and high carrier concentration ( n) ˜ 1020 cm-3. For prevalent scattering mechanisms in the films, experimental data was analyzed by calculating a mean free path ( L) using a highly degenerate electron gas model. Furthermore, to investigate the performance of the deposited films as a transparent conductive material, the optical figure of merit was obtained for all the samples.

Geometric structure of thin SiO xN y films on Si(100)

NASA Astrophysics Data System (ADS)

Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

1998-05-01

Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

Barium ferrite thin-film recording media

NASA Astrophysics Data System (ADS)

Sui, Xiaoyu; Scherge, Matthias; Kryder, Mark H.; Snyder, John E.; Harris, Vincent G.; Koon, Norman C.

1996-03-01

Both longitudinal and perpendicular barium ferrite thin films are being pursued as overcoatless magnetic recording media. In this paper, prior research on thin-film Ba ferrite is reviewed and the most recent results are presented. Self-textured high-coercivity longitudinal Ba ferrite thin films have been achieved using conventional rf diode sputtering. Microstructural studies show that c-axis in-plane oriented grains have a characteristic acicular shape, while c-axis perpendicularly oriented grains have a platelet shape. Extended X-ray absorption fine structure (EXAFS) measurements indicate that the crystal orientations are predetermined by the structural anisotropy in the as-sputtered 'amorphous' state. Recording tests on 1500 Oe coercivity longitudinal Ba ferrite disks show performance comparable with that of a 1900 Oe Co alloy disk. To further improve the recording performance, both grain size and aspect ratio need to be reduced. Initial tribological tests indicate high hardness of Ba ferrite thin films. However, surface roughness needs to be reduced. For future ultrahigh-density contact recording, it is believed that perpendicular recording may be used. A thin Pt underlayer has been found to be capable of producing Ba ferrite thin films with excellent c-axis perpendicular orientation.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Thin Film Li Ion Microbatteries for NASA Applications

NASA Technical Reports Server (NTRS)

West, W. C.; Ratnakumar, B. V.; Brandon, E.; Blosiu, J. O.; Surampudi, S.

1999-01-01

Rechargeable thin film microbatteries have recently become the topic of widespread research for use in low power applications such as battery-backed CMOS memory, miniaturized implantable medical devices and smart cards. In particular, the Center for Integrated Space Microsystems (CISM) at NASA's Jet Propulsion Laboratory has interest in applying this technology for secondary power systems in miniaturized satellites, microsensors, microactuators and other remote MEMS applications. The general requirements of the microbatteries for these applications are high specific energy, wide range of temperature stability. low self-discharge rate, and flexibility of cell design. The thin film Li ion materials system using LiCoO2(LiPO(x)N(1-x))SnO is expected to fulfill these requirements.

Femtosecond laser processing of NiPd single and 5x(Ni/Pd) multilayer thin films

NASA Astrophysics Data System (ADS)

Petrović, S.; Gaković, B.; Zamfirescu, M.; Radu, C.; Peruško, D.; Radak, B.; Ristoscu, C.; Zdravković, S.; Luculescu, C. L.; Mihailescu, I. N.

2017-09-01

Modification of single and complex nickel-palladium samples by laser processing in the femtosecond time domain was studied. The samples were processed by focused Ti:Sapphire laser beam (Clark CPA-2101) with 775 nm laser wavelength, 2 kHz repetition rate, 200 fs pulse duration. The laser-induced morphological modifications have shown dependence on the applied fluences and number of laser pulses. The formed surface nanostructures on the single NiPd/Si and multilayer 5x(Ni/Pd)/Si systems are compared with individual Ni and Pd thin films. The results show an increase in surface roughness, formation of parallel periodic surface structures, appearance of hydrodynamic features and ablation of surface material. At low number of pulses (less than 10 pulses) and low pulse energies range (not over 1.7 μJ), the two types of laser-induced periodic surface structure (LIPSS) can be observed: low and high spatial frequency LIPSS (HSFL and LSFL). For all samples, the measured LSFL periods were 720 nm for the ripples created solely on thin film surfaces during the single pulse action. In the case of the multi-pulse irradiation, the periodicities of created LSFLs on the all investigated thin films have shown tendency to reduction with increasing of pulse energies.

Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ullal, H. S.; Zweibel, K.; von Roedern, B.

2002-05-01

II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% formore » a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.« less

New organic semiconductor thin film derived from p-toluidine monomer

NASA Astrophysics Data System (ADS)

Al-Hossainy, A. F.; Zoromba, M. Sh

2018-03-01

p-Toluidine was used as a precursor to synthesize new organic compound [(E)-4-methyl-N1-((E)-4-methyl-6-(p-tolylimino) cyclohex-3-en-1-ylidene)-N2-(p-tolyl) benzene-1,2-diamine] (MBD) by oxidative reaction via potassium dichromate as oxidizing agent at room temperature. Spin coater was used to fabricate nano-size crystalline thin film of the MBD with thickness 73 nm. The characterizations of the MBD powder and thin film have been described by various techniques including Fourier Transform Infrared (FT-IR), Mass Spectra, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV-Visible measurements and Atomic Force Microscope (AFM). The results revealed that the MBD as an organic material is semi-crystalline containing benzenoid (Bensbnd Nsbnd Ben) and quinonoid (Quin = N = Quin) structures. Various optical constants such as refractive index (n), and the absorption index, (k) of the MBD thin film were determined. The effect of temperature on the electrical resistivity of MBD film was studied by a Keithley 6517B electrometer. The energy band gap value of the MBD thin film was found to be 2.24 eV. Thus, MBD is located in the semiconductor materials range. In addition, structural and optical mechanisms of MBD nanostructured thin film were investigated. The obtained results illustrate the possibility of controlling the organic semiconductor MBD thin film for the optoelectronic applications.

Doped indium nitride thin film by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

Ultrasonic Spray Pyrolysis Deposited Copper Sulphide Thin Films for Solar Cell Applications

PubMed Central

Firat, Y. E.; Yildirim, H.; Erturk, K.

2017-01-01

Polycrystalline copper sulphide (CuxS) thin films were grown by ultrasonic spray pyrolysis method using aqueous solutions of copper chloride and thiourea without any complexing agent at various substrate temperatures of 240, 280, and 320°C. The films were characterized for their structural, optical, and electrical properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM), contact angle (CA), optical absorption, and current-voltage (I-V) measurements. The XRD analysis showed that the films had single or mixed phase polycrystalline nature with a hexagonal covellite and cubic digenite structure. The crystalline phase of the films changed depending on the substrate temperature. The optical band gaps (Eg) of thin films were 2.07 eV (CuS), 2.50 eV (Cu1.765S), and 2.28 eV (Cu1.765S–Cu2S). AFM results indicated that the films had spherical nanosized particles well adhered to the substrate. Contact angle measurements showed that the thin films had hydrophobic nature. Hall effect measurements of all the deposited CuxS thin films demonstrated them to be of p-type conductivity, and the current-voltage (I-V) dark curves exhibited linear variation. PMID:29109807

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

2004-01-01

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

Electric field-tunable Ba{sub x}Sr{sub 1-x}TiO{sub 3} films with high figures of merit grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikheev, Evgeny; Kajdos, Adam P.; Hauser, Adam J.

2012-12-17

We report on the dielectric properties of Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x Less-Than-Or-Equivalent-To 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.

Chemically prepared La2Se3 nanocubes thin film for supercapacitor application.

PubMed

Patil, S J; Lokhande, V C; Chodankar, N R; Lokhande, C D

2016-05-01

Lanthanum selenide (La2Se3) nanocubes thin film is prepared via successive ionic layer adsorption and reaction (SILAR) method and utilized for energy storage application. The prepared La2Se3 thin film is characterized by X-ray diffraction, field emission scanning electron microscopy and contact angle measurement techniques for structural, surface morphological and wettability studies, respectively. Energy dispersive X-ray microanalysis (EDAX) is performed in order to obtain the elemental composition of the thin film. The La2Se3 film electrode shows a maximum specific capacitance of 363 F g(-1) in a 0.8 M LiClO4/PC electrolyte at a scan rate of 5 mV s(-1) within 1.3 V/SCE potential range. The specific capacitive retention of 83 % of La2Se3 film electrode is obtained over 1000 cyclic voltammetry cycles. The predominant performance, such as high energy (80 Wh kg(-1)) and power density (2.5 kW kg(-1)), indicates that La2Se3 film electrode facilitates fast ion diffusion during redox processes. Copyright © 2016 Elsevier Inc. All rights reserved.

Structure and conductivity of epitaxial thin films of barium ferrite and its hydrated form BaFeO2.5-x+δ (OH)2x

NASA Astrophysics Data System (ADS)

Anitha Sukkurji, Parvathy; Molinari, Alan; Benes, Alexander; Loho, Christoph; Sai Kiran Chakravadhanula, Venkata; Garlapati, Suresh Kumar; Kruk, Robert; Clemens, Oliver

2017-03-01

Barium ferrite and its hydrated form (BaFeO2.5-x+δ (OH)2x , BFO) is an interesting cathode material for protonic ceramic fuel cells (PCFC) due to its potential to be both, conducting for electrons and protons. We report on the fabrication of almost epitaxially grown thin films (22 nm) of barium ferrite BaFeO~2.5 (BFO) on Nb-doped SrTiO3 substrates via pulsed laser deposition (PLD), followed by treatment under inert, and subsequently wet inert atmospheres to induce water (respectively proton) incorporation. Microstructure, chemical composition and conducting properties are investigated for the BFO films and their hydrated forms, highlighting the influence of hydration on the conductivity characteristics between ~200-290 K. We find that water incorporation gives a strong enhancement of the conductivity to ~10-9 S cm-1 compared to argon annealed films, inducing electronic and protonic charge carriers at the same time. In comparison to bulk powders, proton conductivity is found to be strongly suppressed in such thin hydrated BFO films, pointing towards the influence of strain on the conductivity, which is evaluated based on a detailed investigation by high-resolution transmission electron microscopy.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

PubMed

Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

2015-03-04

A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

Enhanced magnetoelectric coupling in a composite multiferroic system via interposing a thin film polymer

NASA Astrophysics Data System (ADS)

Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.

2018-05-01

Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

Electrochemical Atomic Layer Epitaxy of Thin Film CdSe

NASA Astrophysics Data System (ADS)

Pham, L.; Kaleida, K.; Happek, U.; Mathe, M. K.; Vaidyanathan, R.; Stickney, J. L.; Radevic, M.

2002-10-01

Electrochemical atomic layer epitaxy (EC-ALE) is a current developmental technique for the fabrication of compound semiconductor thin films. The deposition of elements making up the compound utilizes surface limited reactions where the potential is less than that required for bulk growth. This growth method offers mono-atomic layer control, allowing the deposition of superlattices with sharp interfaces. Here we report on the EC-ALE formation of CdSe thin films on Au and Cu substrates using an automated flow cell system. The band gap was measured using IR absorption and photoconductivity and found to be consistent with the literature value of 1.74 eV at 300K and 1.85 eV at 20K. The stoichiometry of the thin film was confirmed with electron microprobe analysis and x-ray diffraction.

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2- x Ce x CuO4 thin films

NASA Astrophysics Data System (ADS)

Xiong, Fei; Zhang, Hui; Yang, Sheng'an; Li, Dongqi; Zhang, Zheng; Chen, Qingming

2015-08-01

Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd2- x Ce x CuO4 thin films grown on the vicinal-cut SrTiO3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

NASA Astrophysics Data System (ADS)

Tamura, N.; MacDowell, A. A.; Celestre, R. S.; Padmore, H. A.; Valek, B.; Bravman, J. C.; Spolenak, R.; Brown, W. L.; Marieb, T.; Fujimoto, H.; Batterman, B. W.; Patel, J. R.

2002-05-01

The availability of high brilliance synchrotron sources, coupled with recent progress in achromatic focusing optics and large area two-dimensional detector technology, has allowed us to develop an x-ray synchrotron technique that is capable of mapping orientation and strain/stress in polycrystalline thin films with submicron spatial resolution. To demonstrate the capabilities of this instrument, we have employed it to study the microstructure of aluminum thin film structures at the granular and subgranular levels. Due to the relatively low absorption of x-rays in materials, this technique can be used to study passivated samples, an important advantage over most electron probes given the very different mechanical behavior of buried and unpassivated materials.

Preparation of an orthodontic bracket coated with an nitrogen-doped TiO(2-x)N(y) thin film and examination of its antimicrobial performance.

PubMed

Cao, Baocheng; Wang, Yuhua; Li, Na; Liu, Bin; Zhang, Yingjie

2013-01-01

A bracket coated with a nitrogen-doped (N-doped) TiO(2-x)N(y) thin film was prepared using the RF magnetron sputtering method. The physicochemical properties of the thin film were measured using X-ray diffraction and energy-dispersive X-ray spectrometry, while the antimicrobial activity of the bracket against common oral pathogenic microbes was assessed on the basis of colony counts. The rate of antimicrobial activity of the bracket coated with nano-TiO(2-x)N(y) thin film against Streptococcus mutans, Lactobacillus acidophilus, Actinomyces viscous, and Candida albicans was 95.19%, 91.00%, 69.44%, and 98.86%, respectively. Scanning electron microscopy showed that fewer microbes adhered to the surface of this newly designed bracket than to the surface of the normal edgewise bracket. The brackets coated with the N-doped TiO(2-x)N(y) thin film showed high antimicrobial and bacterial adhesive properties against normal oral pathogenic bacterial through visible light, which is effective in prevention of enamel demineralization and gingivitis in orthodontic patients.

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

PubMed

Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

2009-01-01

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

Electrochemical and physical properties of electroplated CuO thin films.

PubMed

Dhanasekaran, V; Mahalingam, T

2013-01-01

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.