Dislocations in bilayer graphene.

PubMed

Butz, Benjamin; Dolle, Christian; Niekiel, Florian; Weber, Konstantin; Waldmann, Daniel; Weber, Heiko B; Meyer, Bernd; Spiecker, Erdmann

2014-01-23

Dislocations represent one of the most fascinating and fundamental concepts in materials science. Most importantly, dislocations are the main carriers of plastic deformation in crystalline materials. Furthermore, they can strongly affect the local electronic and optical properties of semiconductors and ionic crystals. In materials with small dimensions, they experience extensive image forces, which attract them to the surface to release strain energy. However, in layered crystals such as graphite, dislocation movement is mainly restricted to the basal plane. Thus, the dislocations cannot escape, enabling their confinement in crystals as thin as only two monolayers. To explore the nature of dislocations under such extreme boundary conditions, the material of choice is bilayer graphene, the thinnest possible quasi-two-dimensional crystal in which such linear defects can be confined. Homogeneous and robust graphene membranes derived from high-quality epitaxial graphene on silicon carbide provide an ideal platform for their investigation. Here we report the direct observation of basal-plane dislocations in freestanding bilayer graphene using transmission electron microscopy and their detailed investigation by diffraction contrast analysis and atomistic simulations. Our investigation reveals two striking size effects. First, the absence of stacking-fault energy, a unique property of bilayer graphene, leads to a characteristic dislocation pattern that corresponds to an alternating AB B[Symbol: see text]AC change of the stacking order. Second, our experiments in combination with atomistic simulations reveal a pronounced buckling of the bilayer graphene membrane that results directly from accommodation of strain. In fact, the buckling changes the strain state of the bilayer graphene and is of key importance for its electronic properties. Our findings will contribute to the understanding of dislocations and of their role in the structural, mechanical and electronic

Electrostatically confined quantum rings in bilayer graphene.

PubMed

Zarenia, M; Pereira, J M; Peeters, F M; Farias, G A

2009-12-01

We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by position-dependent doping. The energy levels have a magnetic field (B(0)) dependence that is strikingly distinct from that of usual semiconductor quantum rings. In particular, the eigenvalues are not invariant under a B(0) --> -B(0) transformation and, for a fixed total angular momentum index m, their field dependence is not parabolic, but displays two minima separated by a saddle point. The spectra also display several anticrossings, which arise due to the overlap of gate-confined and magnetically confined states.

Spectral properties of excitons in the bilayer graphene

NASA Astrophysics Data System (ADS)

Apinyan, V.; Kopeć, T. K.

2018-01-01

In this paper, we consider the spectral properties of the bilayer graphene with the local excitonic pairing interaction between the electrons and holes. We consider the generalized Hubbard model, which includes both intralayer and interlayer Coulomb interaction parameters. The solution of the excitonic gap parameter is used to calculate the electronic band structure, single-particle spectral functions, the hybridization gap, and the excitonic coherence length in the bilayer graphene. We show that the local interlayer Coulomb interaction is responsible for the semimetal-semiconductor transition in the double layer system, and we calculate the hybridization gap in the band structure above the critical interaction value. The formation of the excitonic band gap is reported as the threshold process and the momentum distribution functions have been calculated numerically. We show that in the weak coupling limit the system is governed by the Bardeen-Cooper-Schrieffer (BCS)-like pairing state. Contrary, in the strong coupling limit the excitonic condensate states appear in the semiconducting phase, by forming the Dirac's pockets in the reciprocal space.

Electronic properties of BN-doped bilayer graphene and graphyne in the presence of electric field

NASA Astrophysics Data System (ADS)

Majidi, R.; Karami, A. R.

2013-11-01

In the present paper, we have used density functional theory to study electronic properties of bilayer graphene and graphyne doped with B and N impurities in the presence of electric field. It has been demonstrated that a band gap is opened in the band structures of the bilayer graphene and graphyne by B and N doping. We have also investigated influence of electric field on the electronic properties of BN-doped bilayer graphene and graphyne. It is found that the band gaps induced by B and N impurities are increased by applying electric field. Our results reveal that doping with B and N, and applying electric field are an effective method to open and control a band gap which is useful to design carbon-based next-generation electronic devices.

Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

NASA Astrophysics Data System (ADS)

Hu, Bo

2015-08-01

Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron-hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron-hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.

High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

PubMed Central

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

2012-01-01

Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

Ab initio studies of hydrogen adatoms on bilayer graphene

NASA Astrophysics Data System (ADS)

Mapasha, R. E.; Ukpong, A. M.; Chetty, N.

2012-05-01

We present a comparative density functional study of the adsorption of hydrogen on bilayer graphene. Six different exchange-correlation functionals are employed to explore the possible configurations of hydrogen adsorption at 50% coverage. Using the four variants of the nonlocal van der Waals density functional, we identify three distinct competing configurations that retain the coupled bilayer structure at 0 K. One of the configurations undergoes a spontaneous transformation from hexagonal to tetrahedral structure, under hydrogenation, with heat of formation ranging between -0.03 eV (vdW-DF) and -0.37 eV (vdW-DFC09x). This configuration has a finite band gap of around 3 eV, whereas all other competing configurations are either semimetallic or metallic. We also find two unique low-energy competing configurations of decoupled bilayer graphene, and therefore suggest the possibility of graphene exfoliation by hydrogen intercalation.

Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics.

PubMed

Woo, Jungwook; Yun, Kyung-Han; Chung, Yong-Chae

2016-04-27

The geometries and electronic characteristics of the graphene monoxide (GMO) bilayer are predicted via density functional theory (DFT) calculations. All the possible sequences of the GMO bilayer show the typical interlayer bonding characteristics of two-dimensional bilayer systems with a weak van der Waals interaction. The band gap energies of the GMO bilayers are predicted to be adequate for electronic device application, indicating slightly smaller energy gaps (0.418-0.448 eV) compared to the energy gap of the monolayer (0.536 eV). Above all, in light of the band gap engineering, the band gap of the GMO bilayer responds to the external electric field sensitively. As a result, a semiconductor-metal transition occurs at a small critical electric field (EC = 0.22-0.30 V/Å). It is therefore confirmed that the GMO bilayer is a strong candidate for nanoelectronics.

Strain and curvature induced evolution of electronic band structures in twisted graphene bilayer.

PubMed

Yan, Wei; He, Wen-Yu; Chu, Zhao-Dong; Liu, Mengxi; Meng, Lan; Dou, Rui-Fen; Zhang, Yanfeng; Liu, Zhongfan; Nie, Jia-Cai; He, Lin

2013-01-01

It is well established that strain and geometry could affect the band structure of graphene monolayer dramatically. Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature, which are found to strongly affect the local band structures of the twisted graphene bilayer. The energy difference of the two low-energy van Hove singularities decreases with increasing lattice deformation and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive chiral fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

Electromechanical oscillations in bilayer graphene

PubMed Central

Benameur, Muhammed M.; Gargiulo, Fernando; Manzeli, Sajedeh; Autès, Gabriel; Tosun, Mahmut; Yazyev, Oleg V.; Kis, Andras

2015-01-01

Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron–phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in applications based on nanoelectromechanical systems. PMID:26481767

Gate-defined quantum confinement in suspended bilayer graphene

NASA Astrophysics Data System (ADS)

Allen, M. T.; Martin, J.; Yacoby, A.

2012-07-01

Quantum-confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum-confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that open a bandgap, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the energy gap induced by a perpendicular electric field and at B>0 using the quantum Hall ν=0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pasadas, Francisco, E-mail: Francisco.Pasadas@uab.cat; Jiménez, David

2015-12-28

Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been includedmore » considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.« less

Current saturation and voltage gain in bilayer graphene field effect transistors.

PubMed

Szafranek, B N; Fiori, G; Schall, D; Neumaier, D; Kurz, H

2012-03-14

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. © 2012 American Chemical Society

Population inversion in monolayer and bilayer graphene

NASA Astrophysics Data System (ADS)

Gierz, Isabella; Mitrano, Matteo; Petersen, Jesse C.; Cacho, Cephise; Turcu, I. C. Edmond; Springate, Emma; Stöhr, Alexander; Köhler, Axel; Starke, Ulrich; Cavalleri, Andrea

2015-04-01

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ∼130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

Double Barriers and Magnetic Field in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Redouani, Ilham; Jellal, Ahmed; Bahlouli, Hocine

2015-12-01

We study the transmission probability in an AB-stacked bilayer graphene of Dirac fermions scattered by a double-barrier structure in the presence of a magnetic field. We take into account the full four bands structure of the energy spectrum and use the suitable boundary conditions to determine the transmission probability. Our numerical results show that for energies higher than the interlayer coupling, four ways for transmission are possible while for energies less than the height of the barrier, Dirac fermions exhibit transmission resonances and only one transmission channel is available. We show that, for AB-stacked bilayer graphene, there is no Klein tunneling at normal incidence. We find that the transmission displays sharp peaks inside the transmission gap around the Dirac point within the barrier regions while they are absent around the Dirac point in the well region. The effect of the magnetic field, interlayer electrostatic potential, and various barrier geometry parameters on the transmission probabilities is also discussed.

Dual doped monolayer and bilayer graphene: The case of 4p and 2p elements

NASA Astrophysics Data System (ADS)

Denis, Pablo A.; Iribarne, Federico

2016-08-01

4p/2p dual-doped monolayer and bilayer graphene were studied via first principle calculations. Generally, dopants prefer to be agglomerated. A second dopant significantly reduces formation energies. Thus, partially reduced graphene oxide would favor substitutional doping by facilitating the introduction of the 4p dopants. Dual-doping can tune the band gap from 0.1 to 0.8 eV. For bilayer graphene, large atomic radii elements (Gallium and Germanium) form interlayer bonds with the undoped sheet. For some dual-doped graphenes, interlayer GaC and GeC bonds were formed, increasing the chemical reactivity of the undoped layer and affecting its electronic structure, with metallic or semiconducting characters observed.

Atomistic mechanisms for bilayer growth of graphene on metal substrates

DOE PAGES

Chen, Wei; Cui, Ping; Zhu, Wenguang; ...

2015-01-08

Epitaxial growth on metal substrates has been shown to be the most powerful approach in producing large-scale high-quality monolayer graphene, yet it remains a major challenge to realize uniform bilayer graphene growth. Here we carry out a comparative study of the atomistic mechanisms for bilayer graphene growth on the (111) surfaces of Cu and Ni, using multiscale approaches combining first-principles calculations and rate-equation analysis. We first show that the relatively weak graphene-Cu interaction enhances the lateral diffusion and effective nucleation of C atoms underneath the graphene island, thereby making it more feasible to grow bilayer graphene on Cu. In contrast,more » the stronger graphene-Ni interaction suppresses the lateral mobility and dimerization of C atoms underneath the graphene, making it unlikely to achieve controlled growth of bilayer graphene on Ni. We then determine the critical graphene size beyond which nucleation of the second layer will take place. Intriguingly, the critical size exhibits an effective inverse "Ehrlich-Schwoebel barrier" effect, becoming smaller for faster C migration from the Cu surface to the graphene-Cu interface sites across the graphene edge. Lastly, these findings allow us to propose a novel alternating growth scheme to realize mass production of bilayer graphene.« less

Symmetry breaking in the zero-energy Landau level in bilayer graphene.

PubMed

Zhao, Y; Cadden-Zimansky, P; Jiang, Z; Kim, P

2010-02-12

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high-field regime, the eightfold degeneracy in the zero-energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding to filling factors nu=0, 1, 2, and 3. Measurements of the activation energy gaps for the nu=2 and 3 filling factors in tilted magnetic fields exhibit no appreciable dependence on the in-plane magnetic field, suggesting that these Landau level splittings are independent of spin. In addition, measurements taken at the nu=0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.

Chiral tunneling in a twisted graphene bilayer.

PubMed

He, Wen-Yu; Chu, Zhao-Dong; He, Lin

2013-08-09

The perfect transmission in a graphene monolayer and the perfect reflection in a Bernal graphene bilayer for electrons incident in the normal direction of a potential barrier are viewed as two incarnations of the Klein paradox. Here we show a new and unique incarnation of the Klein paradox. Owing to the different chiralities of the quasiparticles involved, the chiral fermions in a twisted graphene bilayer show an adjustable probability of chiral tunneling for normal incidence: they can be changed from perfect tunneling to partial or perfect reflection, or vice versa, by controlling either the height of the barrier or the incident energy. As well as addressing basic physics about how the chiral fermions with different chiralities tunnel through a barrier, our results provide a facile route to tune the electronic properties of the twisted graphene bilayer.

Edge currents shunt the insulating bulk in gapped graphene

NASA Astrophysics Data System (ADS)

Zhu, M. J.; Kretinin, A. V.; Thompson, M. D.; Bandurin, D. A.; Hu, S.; Yu, G. L.; Birkbeck, J.; Mishchenko, A.; Vera-Marun, I. J.; Watanabe, K.; Taniguchi, T.; Polini, M.; Prance, J. R.; Novoselov, K. S.; Geim, A. K.; Ben Shalom, M.

2017-02-01

An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.

Electronic and Optical Properties of Twisted Bilayer Graphene

NASA Astrophysics Data System (ADS)

Huang, Shengqiang

The ability to isolate single atomic layers of van der Waals materials has led to renewed interest in the electronic and optical properties of these materials as they can be fundamentally different at the monolayer limit. Moreover, these 2D crystals can be assembled together layer by layer, with controllable sequence and orientation, to form artificial materials that exhibit new features that are not found in monolayers nor bulk. Twisted bilayer graphene is one such prototype system formed by two monolayer graphene layers placed on top of each other with a twist angle between their lattices, whose electronic band structure depends on the twist angle. This thesis presents the efforts to explore the electronic and optical properties of twisted bilayer graphene by Raman spectroscopy and scanning tunneling microscopy measurements. We first synthesize twisted bilayer graphene with various twist angles via chemical vapor deposition. Using a combination of scanning tunneling microscopy and Raman spectroscopy, the twist angles are determined. The strength of the Raman G peak is sensitive to the electronic band structure of twisted bilayer graphene and therefore we use this peak to monitor changes upon doping. Our results demonstrate the ability to modify the electronic and optical properties of twisted bilayer graphene with doping. We also fabricate twisted bilayer graphene by controllable stacking of two graphene monolayers with a dry transfer technique. For twist angles smaller than one degree, many body interactions play an important role. It requires eight electrons per moire unit cell to fill up each band instead of four electrons in the case of a larger twist angle. For twist angles smaller than 0.4 degree, a network of domain walls separating AB and BA stacking regions forms, which are predicted to host topologically protected helical states. Using scanning tunneling microscopy and spectroscopy, these states are confirmed to appear on the domain walls when inversion

Mechanical properties of hydrogenated bilayer graphene

NASA Astrophysics Data System (ADS)

Andrew, R. C.; Mapasha, R. E.; Chetty, N.

2013-06-01

Using first principle methods, we study the mechanical properties of monolayer and bilayer graphene with 50% and 100% coverage of hydrogen. We employ the vdW-DF, vdW-DF-C09x, and vdW-DF2-C09x van der Waals functionals for the exchange correlation interactions that give significantly improved interlayer spacings and energies. We also use the PBE form for the generalized gradient corrected exchange correlation functional for comparison. We present a consistent theoretical framework for the in-plane layer modulus and the out-of-plane interlayer modulus and we calculate, for the first time, these properties for these systems. This gives a measure of the change of the strength properties when monolayer and bilayer graphene are hydrogenated. Moreover, comparing the relative performance of these functionals in describing hydrogenated bilayered graphenes, we also benchmark these functionals in how they calculate the properties of graphite.

Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field

DOE PAGES

Park, Changwon; Ryou, Junga; Hong, Suklyun; ...

2015-07-02

Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. Lastly, we further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.

Polarized micro Raman spectroscopy of bilayer graphene

NASA Astrophysics Data System (ADS)

Moon, Hyerim; Yoon, Duhee; Son, Young-Woo; Cheong, Hyeonsik

2009-03-01

The frequency of Raman 2D band of the graphite depends on the excitation laser energy. This phenomenon is explained with double resonance Raman process. In polarized micro-Raman spectroscopy of single layer graphene, Raman G band (˜1586 cm-1) is isotropic, and 2D band (˜2686 cm-1) strongly depends on relative polarizations of the incident and scattered photons. This strong polarization dependence originates from inhomogeneous optical absorption and emission mediated by resonant electron-phonon interaction. In bi-layer graphene, Raman 2D band can be decomposed into four Lorenztian peaks which can be interpreted in terms of the four transition paths in the double resonance Raman process. We investigated the polarization dependence of each Lorenztian peak in the Raman 2D band of bi-layer graphene for different excitation laser energies. Strong polarization dependence of the Raman 2D band, similar to the case of single layer graphene, is observed. The excitation energy dependence of the polarized Raman scattering is analyzed in terms of the band structure of bi-layer graphene.

Opening a band gap without breaking lattice symmetry: a new route toward robust graphene-based nanoelectronics.

PubMed

Kou, Liangzhi; Hu, Feiming; Yan, Binghai; Frauenheim, Thomas; Chen, Changfeng

2014-07-07

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that a proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by an interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

Wavepacket revivals in monolayer and bilayer graphene rings.

PubMed

García, Trinidad; Rodríguez-Bolívar, Salvador; Cordero, Nicolás A; Romera, Elvira

2013-06-12

We have studied the existence of quantum revivals in graphene quantum rings within a simplified model. The time evolution of a Gaussian-populated wavepacket shows revivals in monolayer and bilayer graphene rings. We have also studied this behavior for quantum rings in a perpendicular magnetic field. We have found that revival time is an observable that shows different values for monolayer and bilayer graphene quantum rings. In addition, the revival time shows valley degeneracy breaking.

Tuning the energy gap of bilayer α-graphyne by applying strain and electric field

NASA Astrophysics Data System (ADS)

Yang, Hang; Wu, Wen-Zhi; Jin, Yu; Wan-Lin, Guo

2016-02-01

Our density functional theory calculations show that the energy gap of bilayer α-graphyne can be modulated by a vertically applied electric field and interlayer strain. Like bilayer graphene, the bilayer α-graphyne has electronic properties that are hardly changed under purely mechanical strain, while an external electric field can open the gap up to 120 meV. It is of special interest that compressive strain can further enlarge the field induced gap up to 160 meV, while tensile strain reduces the gap. We attribute the gap variation to the novel interlayer charge redistribution between bilayer α-graphynes. These findings shed light on the modulation of Dirac cone structures and potential applications of graphyne in mechanical-electric devices. Project supported by the National Key Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB933403), the National Natural Science Foundation of China (Grant Nos. 51472117 and 51535005), the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures, China (Grant No. 0414K01), the Nanjing University of Aeronautics and Astronautics (NUAA) Fundamental Research Funds, China (Grant No. NP2015203), and the Priority Academic Program Development of Jiangsu Higher Education Institutions.

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, C.; Li, J.; Song, X. B.

2016-01-04

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standingmore » bilayer epitaxial graphene transistor show the great application potential of this material system.« less

Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

PubMed Central

Jacak, Janusz; Jacak, Lucjan

2016-01-01

The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bilayer graphene is explained. Experimentally observed hierarchy of FQHE in the first and second Landau levels in monolayer graphene and in the zeroth Landau level in bilayer graphene is beyond the conventional composite fermion interpretation but fits to the presented nonlocal topology commensurability condition. PMID:27877866

Interaction driven quantum Hall effect in artificially stacked graphene bilayers

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-01-01

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-04-21

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers.

Cyclotron resonance in bilayer graphene.

PubMed

Henriksen, E A; Jiang, Z; Tung, L-C; Schwartz, M E; Takita, M; Wang, Y-J; Kim, P; Stormer, H L

2008-02-29

We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B=18 T, we observe four distinct intraband transitions in both the conduction and valence bands. The transition energies are roughly linear in B between the lowest Landau levels, whereas they follow square root[B] for the higher transitions. This highly unusual behavior represents a change from a parabolic to a linear energy dispersion. The density of states derived from our data generally agrees with the existing lowest order tight binding calculation for bilayer graphene. However, in comparing data to theory, a single set of fitting parameters fails to describe the experimental results.

Doping and band gap control at poly(vinylidene fluoride)/graphene interface

NASA Astrophysics Data System (ADS)

Cai, Jia; Wang, Jian-Lu; Gao, Heng; Tian, Bobo; Gong, Shi-Jing; Duan, Chun-Gang; Chu, Jun-Hao

2018-05-01

Using the density-functional first-principles calculations, we investigate the electronic structures of poly(vinylidene fluoride) PVDF/graphene composite systems. The n- and p-doping of graphene can be flexibly switched by reversing the ferroelectric polarization of PVDF, without scarifying the intrinsic π-electron band dispersions of graphene that are usually undermined by chemical doping. The doping degree is also dependent on the thickness of PVDF layers, which will get saturated when PVDF is thick enough. In PVDF/bilayer graphene (BLG) heterostructure, the doping degree directly determines the local energy gap of the charged BLG. The sandwich structure of PVDF/BLG/PVDF can further enhance the local energy gap as well as keep the electric neutrality of BLG, which will be of great application potentials in graphene-based nanoelectronics.

Ultrafast lithium diffusion in bilayer graphene

NASA Astrophysics Data System (ADS)

Kühne, Matthias; Paolucci, Federico; Popovic, Jelena; Ostrovsky, Pavel M.; Maier, Joachim; Smet, Jurgen H.

2017-09-01

Solids that simultaneously conduct electrons and ions are key elements for the mass transfer and storage required in battery electrodes. Single-phase materials with a high electronic and high ionic conductivity at room temperature are hard to come by, and therefore multiphase systems with separate ion and electron channels have been put forward instead. Here we report on bilayer graphene as a single-phase mixed conductor that demonstrates Li diffusion faster than in graphite and even surpassing the diffusion of sodium chloride in liquid water. To measure Li diffusion, we have developed an on-chip electrochemical cell architecture in which the redox reaction that forces Li intercalation is localized only at a protrusion of the device so that the graphene bilayer remains unperturbed from the electrolyte during operation. We performed time-dependent Hall measurements across spatially displaced Hall probes to monitor the in-plane Li diffusion kinetics within the graphene bilayer and measured a diffusion coefficient as high as 7 × 10-5 cm2 s-1.

Fano resonances in bilayer graphene superlattices.

PubMed

Briones-Torres, J A; Rodríguez-Vargas, I

2017-12-01

In this work, we address the ubiquitous phenomenon of Fano resonances in bilayer graphene. We consider that this phenomenon is as exotic as other phenomena in graphene because it can arise without an external extended states source or elaborate nano designs. However, there are not theoretical and/or experimental studies that report the impact of Fano resonances on the transport properties. Here, we carry out a systematic assessment of the contribution of the Fano resonances on the transport properties of bilayer graphene superlattices. Specifically, we find that by changing the number of periods, adjusting the barriers height as well as modifying the barriers and wells width it is possible to identify the contribution of Fano resonances on the conductance. Particularly, the coupling of Fano resonances with the intrinsic minibands of the superlattice gives rise to specific and identifiable changes in the conductance. Moreover, by reducing the angular range for the computation of the transport properties it is possible to obtain conductance curves with line-shapes quite similar to the Fano profile and the coupling profile between Fano resonance and miniband states. In fact, these conductance features could serve as unequivocal characteristic of the existence of Fano resonances in bilayer graphene.

Measurement of the electronic compressibility of bilayer graphene

NASA Astrophysics Data System (ADS)

Henriksen, E. A.; Eisenstein, J. P.

2010-03-01

We report on recent measurements of the electronic compressibility in bilayer graphene. The devices consist of a mechanically exfoliated bilayer graphene flake in a dual-gated configuration, having a global back gate from the underlying Si substrate and a lithographically defined top gate. With suitable shielding, an oscillating voltage applied to the back gate will generate corresponding signals in the top gate only via electric fields which penetrate the graphene, thereby allowing a direct measurement of the compressibility of the bilayer [1]. In our experiments, we map this quantity as a function of the back and top gate bias voltages and compare it to similar maps of the graphene sheet resistivity and capacitance. We discuss our results in light of numerical calculations of the underlying band structure as well as recent theoretical predictions. [1] J. P. Eisenstein, L. N. Pfeiffer, K. W. West, Phys. Rev. B 50, 1760 (1994).

Folded Optical Phonons in Twisted Bilayer Graphene: Raman Signature of Graphene Superlattices

NASA Astrophysics Data System (ADS)

Wang, Yanan; Su, Zhihua; Wu, Wei; Xing, Sirui; Lu, Xiaoxiang; Lu, Xinghua; Pei, Shin-Shem; Robles-Hernandez, Francisco; Hadjiev, Viktor; Bao, Jiming

2013-03-01

In contrast to Bernal-stacked graphene exfoliated from HOPG, twisted bilayer graphene are widely observed in the samples prepared by silicon sublimation of SiC or chemical vapor deposition (CVD). However, many of its basic properties still remain unrevealed. In this work, hexagon-shaped bilayer graphene islands synthesized by CVD method were systematically studied using Raman spectroscopy. A series of folded phonons were observed in the range from 1375 cm-1 to 1525 cm-1. The frequency of folded phonon modes doesn't shift with laser excitation energy, but it is highly dependent on the rotational angle between two layers. In general, the frequency of folded phonon decreases with the increase of rotation angle. This rotation dependence can be qualitatively explained by the folding of phonon dispersion curve of single layer graphene into the reduced Brillouin zone of bilayer superlattice. The obseravtion of folded phonon is an important indication of superlattice band structure.

Interplay of Hofstadter and quantum Hall states in bilayer graphene

NASA Astrophysics Data System (ADS)

Spanton, Eric M.; Zibrov, Alexander A.; Zhou, Haoxin; Taniguchi, Takashi; Watanabe, Kenji; Young, Andrea

Electron interactions in ultraclean systems such as graphene lead to the fractional quantum Hall effect in an applied magnetic field. Long wavelength periodic potentials from a moiré pattern in aligned boron nitride-graphene heterostructures may compete with such interactions and favor spatially ordered states (e.g. Wigner crystals orcharge density waves). To investigate this competition, we studied the bulk phase diagram of asymmetrically moiré-coupled bilayer graphene via multi-terminal magnetocapacitance measurements at ultra-high magnetic fields. Two quantum numbers characterize energy gaps in this regime: t, which indexes the Bloch bands, and s, which indexes the Landau level. Similar to past experiments, we observe the conventional integer and fractional quantum Hall gaps (t = 0), integer Hofstadter gaps (integer s and integer t ≠ 0), and fractional Bloch states associated with an expanded superlattice unit cell (fractional s and integer t). Additionally, we find states with fractional values for both s and t. Measurement of the capacitance matrix shows that these states occur on the layer exposed to the strong periodic potential. We discuss the results in terms of possible fractional quantum hall states unique to periodically modulated systems.

Ultrafast carrier dynamics in bilayer graphene studied by broadband infrared pump-probe spectroscopy

NASA Astrophysics Data System (ADS)

Limmer, Thomas; da Como, Enrico; Niggebaum, Alexander; Feldmann, Jochen

2010-03-01

Recently, bilayer graphene gained a large interest because of its electrically tunable gap appearing in the middle infrared part of the electromagnetic spectrum. This feature is expected to open a number of applications of bilayer graphene in optoelectronics. In this communication we report on the first pump-probe experiment on a single bilayer flake with an unprecedented probe photon energy interval (0.25 -- 1.3 eV). Single flakes were prepared by mechanical exfoliation of graphite and transferred to calcium fluoride substrates. When illuminated with 800 nm (1.5 eV) pump pulses the induced change in transmission shows an ultrafast saturation of the interband transitions from 1.3 to 0.5 eV. In this energy range the saturation recovery occurs within 3 ps and is consistent with an ultrafast relaxation of hot carriers. Interestingly, we report on the observation of a resonance at 0.4 eV characterized by a longer dynamics. The results are discussed considering many-body interactions.

Semiconducting behavior of substitutionally doped bilayer graphene

NASA Astrophysics Data System (ADS)

Mousavi, Hamze; Khodadadi, Jabbar; Grabowski, Marek

2018-02-01

In the framework of the Green's functions approach, random tight-binding model and using the coherent potential approximation, electronic characteristics of the bilayer graphene are investigated by exploring various forms of substitutional doping of a single or both layers of the system by either boron and (or) nitrogen atoms. The results for displacement of the Fermi level resemble the behavior of acceptor or donor doping in a conventional semiconductor, dependent on the impurity type and concentration. The particular pattern of doping of just one layer with one impurity type is most efficient for opening a gap within the energy bands which could be tuned directly by impurity concentration. Doping both layers at the same time, each with one impurity type, leads to an anomaly whereby the gap decreases with increasing impurity concentration.

Unfolding energy spectra of double-periodicity two-dimensional systems: Twisted bilayer graphene and MoS2 on graphene

NASA Astrophysics Data System (ADS)

Matsushita, Yu-ichiro; Nishi, Hirofumi; Iwata, Jun-ichi; Kosugi, Taichi; Oshiyama, Atsushi

2018-01-01

We propose an unfolding scheme to analyze energy spectra of complex large-scale systems which are inherently of double periodicity on the basis of the density-functional theory. Applying our method to a twisted bilayer graphene (tBLG) and a stack of monolayer MoS2 on graphene (MoS2/graphene) as examples, we first show that the conventional unfolding scheme in the past using a single primitive-cell representation causes serious problems in analyses of the energy spectra. We then introduce our multispace representation scheme in the unfolding method and clarify its validity. Velocity renormalization of Dirac electrons in tBLG and mini gaps of Dirac cones in MoS2/graphene are elucidated in the present unfolding scheme.

Common-path interference and oscillatory Zener tunneling in bilayer graphene p-n junctions

PubMed Central

Nandkishore, Rahul; Levitov, Leonid

2011-01-01

Interference and tunneling are two signature quantum effects that are often perceived as the yin and yang of quantum mechanics: a particle simultaneously propagating along several distinct classical paths versus a particle penetrating through a classically inaccessible region via a single least-action path. Here we demonstrate that the Dirac quasiparticles in graphene provide a dramatic departure from this paradigm. We show that Zener tunneling in gapped bilayer graphene, which governs transport through p-n heterojunctions, exhibits common-path interference that takes place under the tunnel barrier. Due to a symmetry peculiar to the gapped bilayer graphene bandstructure, interfering tunneling paths form conjugate pairs, giving rise to high-contrast oscillations in transmission as a function of the gate-tunable bandgap and other control parameters of the junction. The common-path interference is solely due to forward-propagating waves; in contrast to Fabry–Pérot-type interference in resonant-tunneling structures, it does not rely on multiple backscattering. The oscillations manifest themselves in the junction I–V characteristic as N-shaped branches with negative differential conductivity. The negative dI/dV, which arises solely due to under-barrier interference, can enable new high-speed active-circuit devices with architectures that are not available in electronic semiconductor devices. PMID:21825159

How Bilayer Graphene Got a Bandgap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng Wang

2009-06-02

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Feng Wang

2017-12-09

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

How Bilayer Graphene Got a Bandgap

ScienceCinema

Wang, Feng

2018-01-08

Graphene is the two-dimensional crystalline form of carbon, whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics. But theres a catch: graphene has no bandgap. Now Feng Wang and his colleagues at Berkeley Lab and UC Berkeley have engineered a bandgap in bilayer graphene that can be precisely controlled from 0 to 250 milli-electron volts, which is the energy of infrared radiation.

Gate-independent energy gap in noncovalently intercalated bilayer graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Li, Yuanchang

2016-12-01

Our first-principles calculations show that an energy gap around 0.12-0.25 eV can be engineered in epitaxial graphene on SiC(0001) through the noncovalent intercalation of transition or alkali metals but originated from the distinct mechanisms. The former is attributed to the combined effects of a metal-induced perpendicular electric field and interaction, while the latter is solely attributed to the built-in electric field. A great advantage of this scheme is that the gap size is almost independent of the gate voltage up to 1 V/nm, thus reserving the electric means to tune the Fermi level of graphene when configured as field-effect transistors. Given the recent progress in experimental techniques for intercalated graphene, our findings provide a practical way to incorporate graphene in the current semiconductor industry.

Flexural phonon limited phonon drag thermopower in bilayer graphene

NASA Astrophysics Data System (ADS)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We investigate the phonon drag thermopower from flexural phonons as a function of electron temperature and carrier concentration in the Bloch-Gruneisen regime in non-strained bilayer graphene using Boltzmann transport equation approach. The flexural phonons are expected to be the major source of intrinsic scattering mechanism in unstrained bilayer graphene due to their large density. The flexural phonon modes dispersion relation is quadratic so these low energy flexural phonons abound at room temperature and as a result deform the bilayer graphene sheet in the out of plane direction and affects the transport properties. We also produce analytical result for phonon-drag thermopower from flexural phonons and find that phonon-drag thermopower depicts T2 dependence on temperature and n-1 on carrier concentration.

Electronic transport of bilayer graphene with asymmetry line defects

NASA Astrophysics Data System (ADS)

Zhao, Xiao-Ming; Wu, Ya-Jie; Chen, Chan; Liang, Ying; Kou, Su-Peng

2016-11-01

In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

Synthesis of Large-grain, Single-crystalline Monolayer and AB-stacking Bilayer Graphene

NASA Astrophysics Data System (ADS)

Zhang, Luyao; Lin, Yung-Chen; Zhang, Yi; Chang, Han-Wen; Yeh, Wen-Cheng; Zhou, Chongwu; USC Nanotechnology Research Laboratory Team

2013-03-01

We report the growth of large-grain, single-crystalline monolayer and AB-stacking bilayer graphene by the combination of ambient pressure chemical vapor deposition and low pressure chemical vapor deposition. The shape of the monolayer graphene was modified to be either hexagons or flowers under different growth conditions. The size of the bilayer graphene region was enlarged under ambient pressure growth conditions with low methane concentration. Raman spectra and selected area electron diffraction of individual graphene grain indicated that the each graphene grain is single-crystalline. With electron beam lithography patterned PMMA seeds, graphene nucleation can be controlled and graphene monolayer and bilayer arrays were synthesized on copper foil. Electron backscatter diffraction study revealed that the graphene morphology had little correlation with the crystalline orientation of underlying copper substrate. Mork Family Department of Chemical Engineering and Materials Science

Enhanced sensitivity of a microfabricated resonator using a graphene-polystyrene bilayer membrane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Minhyuk; Lee, Eunho; Cho, Kilwon

2014-08-18

A graphene layer was synthesized using chemical vapor deposition methods and a polystyrene solution was spin-cast onto the graphene film. The graphene-polystyrene bilayer membrane was attached between the two tines of a microfabricated quartz tuning fork (QTF). The modulus of the graphene-polystyrene bilayer was measured to be twice that of a pristine polystyrene membrane. Exposure of the membrane-coated QTF to ethanol vapor decreased the resonance frequency of the microresonator. The bilayer membrane-coated QTF produced a frequency change that was three times the change obtained using a polystyrene membrane-coated QTF, with a lower degree of degradation in the Q factor. Themore » limit of detection of the bilayer membrane-coated QTF to ethanol vapor was determined to be 20 ppm.« less

Optically induced Lifshitz transition in bilayer graphene

NASA Astrophysics Data System (ADS)

Iorsh, I. V.; Dini, K.; Kibis, O. V.; Shelykh, I. A.

2017-10-01

It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition—the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply connected Fermi surface to the doubly connected one, whereas the circularly polarized field induces the multicritical point where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates a physical basis to control the electronic properties of bilayer graphene with light.

Adsorption and magnetism of bilayer graphene on the MnO polar surface with oxygen vacancies in the interface: First principles study

NASA Astrophysics Data System (ADS)

Ilyasov, Victor V.; Ershov, Igor V.; Popova, Inna G.; Pham, Khang D.; Nguyen, Chuong V.

2018-05-01

In this paper, we investigate systematically the structural, electronic, magnetic and adsorption properties of Bernal-stacked bilayer graphene on MnO(111) surface terminated by an oxygen atom, as a function of nonstoichiometric composition of the BLG/MnOx(111) interface. For additional functionalization of the BLG/MnOx(111) system, we also studied the adsorption properties of oxygen adsorbed on the BLG/MnOx(111) interface. Our results showed that the BLG is bound to the MnOx(111) substrate by the weak interaction for both spin-up and spin-down. Furthermore, we found that BLG adsorbed on the MnOx(111) substrate with a reduced oxygen symmetry in the interface is accompanied with a downshift of the Fermi level, which identifies the band structure of BLG as a p-type semiconductor. Upon interaction between BLG and MnOx(111) substrate, a forbidden gap of about 350 meV was opened between its bonding and antibonding π bands. A forbidden gap and the local magnetic moments in bilayer graphene can be controlled by changing the oxygen nonstoichometry or by oxygen adsorption. Additionally, magnetism has been predicted in the bilayer graphene adsorbed on the polar MnOx(111) surface with oxygen vacancies in the BLG/MnOx(111) interface, and its nature has also been discussed in this work. These results showed that the adsorption of bilayer graphene on the MnO(111) substrate can be used for developing novel generation of electronic and spintronic devices.

Synthesis and electrical characterization of magnetic bilayer graphene intercalate.

PubMed

Kim, Namdong; Kim, Kwang S; Jung, Naeyoung; Brus, Louis; Kim, Philip

2011-02-09

We report synthesis and transport properties of the minimal graphite intercalation compound, a ferric chloride (FeCl(3))(n) island monolayer inside bilayer graphene. Chemical doping by the intercalant is simultaneously probed by micro-Raman spectroscopy and Hall measurements. Quantum oscillations of conductivity originate from microscopic domains of intercalated and unintercalated regions. A slight upturn in resistance related to magnetic transition is observed. Two-dimensional intercalation in bilayer graphene opens new possibilities to engineer two-dimensional properties of intercalates.

Ultraviolet absorption spectrum of the half-filled bilayer graphene

NASA Astrophysics Data System (ADS)

Apinyan, V.; Kopeć, T. K.

2018-07-01

We consider the optical properties of the half-filled AB-stacked bilayer graphene with the excitonic pairing and condensation between the layers. Both intra and interlayer local Coulomb interaction effects have been taken into account and the role of the exact Fermi energy has been discussed in details. We have calculated the absorption coefficient, refractive index, dielectric response functions and the electron energy loss spectrum for different interlayer Coulomb interaction regimes and for different temperatures. Considering the full four-band model for the interacting AB bilayer graphene, a good agreement is achieved with other theoretical and experimental works on the subject, in particular, limiting cases of the theory. The calculations, presented here, permit to estimate accurately the effects of excitonic pairing and condensation on the optical properties of the bilayer graphene. The modifications of the plasmon excitation spectrum are discussed in details for a very large interval of the interlayer interaction parameter.

Self-assembled PCBM bilayers on graphene and HOPG examined by AFM and STM

NASA Astrophysics Data System (ADS)

Li, Yanlong; Chen, Chuanhui; Burton, John; Park, Kyungwha; Heflin, James R.; Tao, Chenggang

2018-05-01

In this work we report fabrication and characterization of phenyl-C61-butyric acid methyl ester (PCBM) bilayer structures on graphene and highly oriented pyrolytic graphite (HOPG). Through careful control of the PCBM solution concentration (from 0.1 to 2 mg ml-1) and the deposition conditions, we demonstrate that PCBM molecules self-assemble into bilayer structures on graphene and HOPG substrates. Interestingly, the PCBM bilayers are formed with two distinct heights on HOPG, but only one unique representative height on graphene. At elevated annealing temperatures, edge diffusion allows neighboring vacancies to merge into a more ordered structure. This is, to the best of our knowledge, the first experimental realization of PCBM bilayer structures on graphene. This work could provide valuable insight into fabrication of new hybrid, ordered structures for applications to organic solar cells.

Self-assembled PCBM bilayers on graphene and HOPG examined by AFM and STM.

PubMed

Li, Yanlong; Chen, Chuanhui; Burton, John; Park, Kyungwha; Heflin, James R; Tao, Chenggang

2018-05-04

In this work we report fabrication and characterization of phenyl-C61-butyric acid methyl ester (PCBM) bilayer structures on graphene and highly oriented pyrolytic graphite (HOPG). Through careful control of the PCBM solution concentration (from 0.1 to 2 mg ml -1 ) and the deposition conditions, we demonstrate that PCBM molecules self-assemble into bilayer structures on graphene and HOPG substrates. Interestingly, the PCBM bilayers are formed with two distinct heights on HOPG, but only one unique representative height on graphene. At elevated annealing temperatures, edge diffusion allows neighboring vacancies to merge into a more ordered structure. This is, to the best of our knowledge, the first experimental realization of PCBM bilayer structures on graphene. This work could provide valuable insight into fabrication of new hybrid, ordered structures for applications to organic solar cells.

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

NASA Astrophysics Data System (ADS)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

PubMed

Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; Movva, Hema C P; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F; Banerjee, Sanjay K; Tutuc, Emanuel

2015-01-14

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

Anomalous Dirac point transport due to extended defects in bilayer graphene.

PubMed

Shallcross, Sam; Sharma, Sangeeta; Weber, Heiko B

2017-08-24

Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the distribution of conductivities is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.In seemingly indistinguishable bilayer graphene samples, two distinct transport regimes, insulating and metallic, have been identified experimentally. Here, the authors demonstrate that these two states originate from the interplay between extended defects and evanescent modes at the Dirac point.

Multicomponent Electron-Hole Superfluidity and the BCS-BEC Crossover in Double Bilayer Graphene

NASA Astrophysics Data System (ADS)

Conti, S.; Perali, A.; Peeters, F. M.; Neilson, D.

2017-12-01

Superfluidity in coupled electron-hole sheets of bilayer graphene is predicted here to be multicomponent because of the conduction and valence bands. We investigate the superfluid crossover properties as functions of the tunable carrier densities and the tunable energy band gap Eg. For small band gaps there is a significant boost in the two superfluid gaps, but the interaction-driven excitations from the valence to the conduction band can weaken the superfluidity, even blocking the system from entering the Bose-Einstein condensate (BEC) regime at low densities. At a given larger density, a band gap Eg˜80 - 120 meV can carry the system into the strong-pairing multiband BCS-BEC crossover regime, the optimal range for realization of high-Tc superfluidity.

First-principles study on interlayer state in alkali and alkaline earth metal atoms intercalated bilayer graphene

NASA Astrophysics Data System (ADS)

Kaneko, Tomoaki; Saito, Riichiro

2017-11-01

Energetics and electronic structures of alkali metal (Li, Na, K, Rb, and Cs) and alkaline earth metal (Be, Mg, Ca, Sr, and Ba) atoms intercalated bilayer graphene are systematically investigated using first-principles calculations based on density functional theory. Formation of alkali and alkaline earth metal atoms intercalated bilayer graphene is exothermic except for Be and Mg. The interlayer state between two graphene layers is occupied for K, Rb, Cs, Ca, Sr, and Ba. We find that the energetic position of the interlayer states between bilayer graphene monotonically shifts downward with increasing of interlayer distance. The interlayer distances of more than 4.5 Å and 4.0 Å, respectively, are necessary for the occupation of the interlayer state in bilayer graphene for alkali and alkaline earth metal atoms, which is almost independent of the intercalant metal species. We discuss the relevance to occurrence of superconductivity for the metal intercalated bilayer graphene in terms of the occupation of the interlayer state and the phonon frequency of metal ions.

Graphene analogue in (111)-oriented BaBiO3 bilayer heterostructures for topological electronics.

PubMed

Kim, Rokyeon; Yu, Jaejun; Jin, Hosub

2018-01-11

Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to their multiple Dirac cones and the π-Berry phase of each Dirac cone, graphene-like electronic structures constitute an ideal platform for topological electronics; graphene can provide various topological phases when incorporated with large spin-orbit coupling and mass-gap tunability via symmetry-breaking. Here, we propose that a (111)-oriented BaBiO 3 bilayer (BBL) sandwiched between large-gap perovskite oxides is a promising candidate for topological electronics by realizing a gap-tunable, and consequently a topology-tunable, graphene analogue. Depending on how neighboring perovskite spacers are chosen, the inversion symmetry of the BBL heterostructure can be either conserved or broken, leading to the quantum spin Hall (QSH) and quantum valley Hall (QVH) phases, respectively. BBL sandwiched by ferroelectric compounds enables switching of the QSH and QVH phases and generates the topological domain boundary. Given the abundant order parameters of the sandwiching oxides, the BBL can serve as versatile topological building blocks in oxide heterostructures.

Measuring Interlayer Shear Stress in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Wang, Guorui; Dai, Zhaohe; Wang, Yanlei; Tan, PingHeng; Liu, Luqi; Xu, Zhiping; Wei, Yueguang; Huang, Rui; Zhang, Zhong

2017-07-01

Monolayer two-dimensional (2D) crystals exhibit a host of intriguing properties, but the most exciting applications may come from stacking them into multilayer structures. Interlayer and interfacial shear interactions could play a crucial role in the performance and reliability of these applications, but little is known about the key parameters controlling shear deformation across the layers and interfaces between 2D materials. Herein, we report the first measurement of the interlayer shear stress of bilayer graphene based on pressurized microscale bubble loading devices. We demonstrate continuous growth of an interlayer shear zone outside the bubble edge and extract an interlayer shear stress of 40 kPa based on a membrane analysis for bilayer graphene bubbles. Meanwhile, a much higher interfacial shear stress of 1.64 MPa was determined for monolayer graphene on a silicon oxide substrate. Our results not only provide insights into the interfacial shear responses of the thinnest structures possible, but also establish an experimental method for characterizing the fundamental interlayer shear properties of the emerging 2D materials for potential applications in multilayer systems.

Structural and electronic transformation in low-angle twisted bilayer graphene

NASA Astrophysics Data System (ADS)

Gargiulo, Fernando; Yazyev, Oleg V.

2018-01-01

Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical simulations that this is a consequence of a structural transformation of the moiré pattern inherent to twisted bilayer graphene taking place at twist angles θ below a crossover angle θ\\star=1.2\\circ . The transformation is governed by the interplay between the interlayer van der Waals interaction and the in-plane strain field, and is revealed by a change in the functional form of the twist energy density. This transformation unveils an electronic regime characteristic of vanishing twist angles in which the charge density converges, though not uniformly, to that of ideal bilayer graphene with Bernal stacking. On the other hand, the stacking domain boundaries form a distinct charge density pattern that provides the STM signature of the hexagonal solitonic network.

Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

DOEpatents

Beechem, III, Thomas Edwin; Howell, Stephen W.; Peters, David W.; Davids, Paul; Ohta, Taisuke

2016-03-22

The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales.

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

NASA Astrophysics Data System (ADS)

Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo

2017-06-01

To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.

Experimental Investigation of the Electronic Properties of Twisted Bilayer Graphene by STM and STS

NASA Astrophysics Data System (ADS)

Yin, Longjing; Qiao, Jiabin; Wang, Wenxiao; Zuo, Weijie; He, Lin

The electronic properties of graphene multilayers depend sensitively on their stacking order. A twisted angle is treated as a unique degree of freedom to tune the electronic properties of graphene system. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). We demonstrate that the interlayer coupling strength affects both the Van Hove singularities and the Fermi velocity of twisted bilayers dramatically. This removes the discrepancy about the Fermi velocity renormalization in the twisted bilayers and provides a consistent interpretation of all current data. Moreover, we report the experimental evidence for non-Abelian gauge potentials in twisted graphene bilayers by STM and STS. At a magic twisted angle, about 1.11°, a pronounced sharp peak is observed in the tunnelling spectra due to the action of the non-Abelian gauge fields. Because of the effective non-Abelian gauge fields, the rotation angle could transfer the charge carriers in the twisted bilayers from massless Dirac fermions into well localized electrons, or vice versa, efficiently. This provides a new route to tune the electronic properties of graphene systems, which will be essential in future graphene nanoelectronics.

Explanation of ν=−12 fractional quantum Hall state in bilayer graphene

PubMed Central

Jacak, L.

2016-01-01

The commensurability condition is applied to determine the hierarchy of fractional filling of Landau levels for fractional quantum Hall effect (FQHE) in monolayer and bilayer graphene. Good agreement with experimental data is achieved. The presence of even-denominator filling fractions in the hierarchy of the FQHE in bilayer graphene is explained, including the state at ν=−12. PMID:27118883

AB-stacked square-like bilayer ice in graphene nanocapillaries.

PubMed

Zhu, YinBo; Wang, FengChao; Bai, Jaeil; Zeng, Xiao Cheng; Wu, HengAn

2016-08-10

Water, when constrained between two graphene sheets and under ultrahigh pressure, can manifest dramatic differences from its bulk counterparts such as the van der Waals pressure induced water-to-ice transformation, known as the metastability limit of two-dimensional (2D) liquid. Here, we present result of a new crystalline structure of bilayer ice with the AB-stacking order, observed from molecular dynamics simulations of constrained water. This AB-stacked bilayer ice (BL-ABI) is transformed from the puckered monolayer square-like ice (pMSI) under higher lateral pressure in the graphene nanocapillary at ambient temperature. BL-ABI is a proton-ordered ice with square-like pattern. The transition from pMSI to BL-ABI is through crystal-to-amorphous-to-crystal pathway with notable hysteresis-loop in the potential energy during the compression/decompression process, reflecting the compression/tensile limit of the 2D monolayer/bilayer ice. In a superheating process, the BL-ABI transforms into the AB-stacked bilayer amorphous ice with the square-like pattern.

Experimental realization of gate controlled topological conducting channels in bilayer graphene

NASA Astrophysics Data System (ADS)

Li, J.; McFaul, K. J.; Zern, Z.; Zhu, J.; Wang, K.; Ren, Y. F.; Qiao, Z. H.; Watanabe, K.; Taniguchi, T.

Manipulating the valley degree of freedom in two-dimensional honeycomb lattices can potentially lead to a new type of electronics called valleytronics. In electrically gapped bilayer graphene, the broken inversion symmetry leads to non-zero and asymmetric Berry curvature Ω in the K and K' valleys of the Brillouin zone. Reversing the sign of Ω at the internal line junction of two oppositely gated bilayer graphene is predicted to yield counter-propagating edge modes, the so-called kink states, with quantized conductance of 4e2 / h in the absence of valley mixing. We have overcome fabrication challenges to implement high-quality hBN encapsulated, dual-split-gates structures necessary to observe the kink states. Here I present experimental evidences of the kink states. In the absence of a magnetic field, the kink states have a mean free path of a few hundred nm. Ballistic conductance of 4e2 / h is achieved in a perpendicular magnetic field. We discuss the potential valley-mixing mechanisms and the role of the magnetic field. Experimental results are supported by numerical studies. We will also discuss ongoing efforts in realizing valley-controlled transmission and guiding of the kink states, which is a significant step towards the development of valleytronics.

Electric-field-induced plasmon in AA-stacked bilayer graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chuang, Y.C., E-mail: yingchih.chuang@gmail.com; Wu, J.Y., E-mail: yarst5@gmail.com; Lin, M.F., E-mail: mflin@mail.ncku.edu.tw

2013-12-15

The collective excitations in AA-stacked bilayer graphene for a perpendicular electric field are investigated analytically within the tight-binding model and the random-phase approximation. Such a field destroys the uniform probability distribution of the four sublattices. This drives a symmetry breaking between the intralayer and interlayer polarization intensities from the intrapair band excitations. A field-induced acoustic plasmon thus emerges in addition to the strongly field-tunable intrinsic acoustic and optical plasmons. At long wavelengths, the three modes show different dispersions and field dependence. The definite physical mechanism of the electrically inducible and tunable mode can be expected to also be present inmore » other AA-stacked few-layer graphenes. -- Highlights: •The analytical derivations are performed by the tight-binding model. •An electric field drives the non-uniformity of the charge distribution. •A symmetry breaking between the intralayer and interlayer polarizations is illustrated. •An extra plasmon emerges besides two intrinsic modes in AA-stacked bilayer graphene. •The mechanism of a field-induced mode is present in AA-stacked few-layer graphenes.« less

P3HT-graphene bilayer electrode for Schottky junction photodetectors

NASA Astrophysics Data System (ADS)

Aydın, H.; Kalkan, S. B.; Varlikli, C.; Çelebi, C.

2018-04-01

We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.

Theoretical determination of hydrodynamic window in monolayer and bilayer graphene from scattering rates

NASA Astrophysics Data System (ADS)

Ho, Derek Y. H.; Yudhistira, Indra; Chakraborty, Nilotpal; Adam, Shaffique

2018-03-01

Electrons behave like a classical fluid with a momentum distribution function that varies slowly in space and time when the quantum-mechanical carrier-carrier scattering dominates over all other scattering processes. Recent experiments in monolayer and bilayer graphene have reported signatures of such hydrodynamic electron behavior in ultraclean devices. In this theoretical work, starting from a microscopic treatment of electron-electron, electron-phonon, and electron-impurity interactions within the random phase approximation, we demonstrate that monolayer and bilayer graphene both host two different hydrodynamic regimes. We predict that the hydrodynamic window in bilayer graphene is stronger than in monolayer graphene, and has a characteristic "v shape" as opposed to a "lung shape." Finally, we collapse experimental data onto a universal disorder-limited theory, demonstrating that the observed violation of the Wiedemann-Franz law in monolayers occurs in a regime dominated by impurity-induced electron-hole puddles.

Energy density and energy flow of plasmonic waves in bilayer graphene

NASA Astrophysics Data System (ADS)

Moradi, Afshin

2017-07-01

The propagation of plasmonic waves in bilayer graphene is studied based on the classical electrodynamics. The interactions between conduction electrons confined to move on the surface of each layer are taken into account via the two-dimensional linearized hydrodynamic model. The energy theorem of electrodynamics is cast in a form which yields expressions for energy density and energy flow of p-polarized surface plasmon polariton waves in bilayer graphene. Numerical results show that the presence of two layers causes the appearance of two branches in the dispersion relation that introduce alterations in the physical behavior of the energy, power flow and the energy transport velocity, in comparison with the results of monolayer graphene.

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

2015-06-01

We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for

Bilayer graphene phonovoltaic-FET: In situ phonon recycling

NASA Astrophysics Data System (ADS)

Melnick, Corey; Kaviany, Massoud

2017-11-01

A new heat harvester, the phonovoltaic (pV) cell, was recently proposed. The device converts optical phonons into power before they become heat. Due to the low entropy of a typical hot optical phonon population, the phonovoltaic can operate at high fractions of the Carnot limit and harvest heat more efficiently than conventional heat harvesting technologies such as the thermoelectric generator. Previously, the optical phonon source was presumed to produce optical phonons with a single polarization and momentum. Here, we examine a realistic optical phonon source in a potential pV application and the effects this has on pV operation. Supplementing this work is our investigation of bilayer graphene as a new pV material. Our ab initio calculations show that bilayer graphene has a figure of merit exceeding 0.9, well above previously investigated materials. This allows a room-temperature pV to recycle 65% of a highly nonequilibrium, minimum entropy population of phonons. However, full-band Monte Carlo simulations of the electron and phonon dynamics in a bilayer graphene field-effect transistor (FET) show that the optical phonons emitted by field-accelerated electrons can only be recycled in situ with an efficiency of 50%, and this efficiency falls as the field strength grows. Still, an appropriately designed FET-pV can recycle the phonons produced therein in situ with a much higher efficiency than a thermoelectric generator can harvest heat produced by a FET ex situ.

Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dali, E-mail: wangdali@mail.ahnu.edu.cn; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093; Jin, Guojun, E-mail: gjin@nju.edu.cn

2013-12-21

We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned bymore » the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer.« less

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene.

PubMed

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-02

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Gate-Controlled Transmission of Quantum Hall Edge States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Wen, Hua; Watanabe, Kenji; Taniguchi, Takashi; Zhu, Jun

2018-02-01

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas carry key information of the bulk excitations. Here we demonstrate gate-controlled transmission of edge states in bilayer graphene through a potential barrier with tunable height. The backscattering rate is continuously varied from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

Capacitance of graphenes

NASA Astrophysics Data System (ADS)

Young, Andrea; Dean, Cory; Meric, Inanc; Hone, Jim; Shepard, Ken; Kim, Philip

2010-03-01

Using a transfer procedure and single crystal hexagonal Boron Nitride gate dielectric, we are able to fabricate high mobility graphene devices with local top and back gates. The novel geometry of these devices allows us to measure the spatially averaged compressibility of mono- and bilayer graphene using the ``penetration field'' technique [Eisenstein, J.P. et al. Phys. Rev. Lett. 68, 674 (1992)]. In particular, we analyze the the effects of strong transverse electric fields on the compressibility of graphenes, especially as pertains to charged impurity scattering in single layer graphene and the opening of an energy gap in bilayer.

Experimental evidence for non-Abelian gauge potentials in twisted graphene bilayers

NASA Astrophysics Data System (ADS)

Yin, Long-Jing; Qiao, Jia-Bin; Zuo, Wei-Jie; Li, Wen-Tian; He, Lin

2015-08-01

Non-Abelian gauge potentials are quite relevant in subatomic physics, but they are relatively rare in a condensed matter context. Here we report the experimental evidence for non-Abelian gauge potentials in twisted graphene bilayers by scanning tunneling microscopy and spectroscopy. At a magic twisted angle, θ ≈(1.11±0.05 ) ∘ , a pronounced sharp peak, which arises from the nondispersive flat bands at the charge neutrality point, is observed in the tunneling density of states due to the action of the non-Abelian gauge fields. Moreover, we observe confined electronic states in the twisted bilayer, as manifested by regularly spaced tunneling peaks with energy spacing δ E ≈vF/D ≈70 meV (here vF is the Fermi velocity of graphene and D is the period of the moiré patterns). This indicates that the non-Abelian gauge potentials in twisted graphene bilayers confine low-energy electrons into a triangular array of quantum dots following the modulation of the moiré patterns. Our results also directly demonstrate that the Fermi velocity in twisted bilayers can be tuned from about 106m /s to zero by simply reducing the twisted angle of about 2∘.

Basal-plane dislocations in bilayer graphene - Peculiarities in a quasi-2D material

NASA Astrophysics Data System (ADS)

Butz, Benjamin

2015-03-01

Dislocations represent one of the most fascinating and fundamental concepts in materials science. First and foremost, they are the main carriers of plastic deformation in crystalline materials. Furthermore, they can strongly alter the local electronic or optical properties of semiconductors and ionic crystals. In layered crystals like graphite dislocation movement is restricted to the basal plane. Thus, those basal-plane dislocations cannot escape enabling their confinement in between only two atomic layers of the material. So-called bilayer graphene is the thinnest imaginable quasi-2D crystal to explore the nature and behavior of dislocations under such extreme boundary conditions. Robust graphene membranes derived from epitaxial graphene on SiC provide an ideal platform for their investigation. The presentation will give an insight in the direct observation of basal-plane partial dislocations by transmission electron microscopy and their detailed investigation by diffraction contrast analysis and atomistic simulations. The investigation reveals striking size effects. First, the absence of stacking fault energy, a unique property of bilayer graphene, leads to a characteristic dislocation pattern, which corresponds to an alternating AB <--> BA change of the stacking order. Most importantly, our experiments in combination with atomistic simulations reveal a pronounced buckling of the bilayer graphene membrane, which directly results from accommodation of strain. In fact, the buckling completely changes the strain state of the bilayer graphene and is of key importance for its electronic/spin transport properties. Due to the high degree of disorder in our quasi-2D material it is one of the very few examples for a perfect linear magnetoresistance, i.e. the linear dependency of the in-plane electrical resistance on a magnetic field applied perpendicular to the graphene sheet up to field strengths of more than 60 T. This research is financed by the German Research

Synergistic effect of temperature and point defect on the mechanical properties of single layer and bi-layer graphene

NASA Astrophysics Data System (ADS)

Debroy, Sanghamitra; Pavan Kumar, V.; Vijaya Sekhar, K.; Acharyya, Swati Ghosh; Acharyya, Amit

2017-10-01

The present study reports a comprehensive molecular dynamics simulation of the effect of a) temperature (300-1073 K at intervals of every 100 K) and b) point defect on the mechanical behaviour of single (armchair and zigzag direction) and bilayer layer graphene (AA and AB stacking). Adaptive intermolecular reactive bond order (AIREBO) potential function was used to describe the many-body short-range interatomic interactions for the single layer graphene sheet. Moreover, Lennard Jones model was considered for bilayer graphene to incorporate the van der Waals interactions among the interlayers of graphene. The effect of temperature on the strain energy of single layer and bilayer graphene was studied in order to understand the difference in mechanical behaviour of the two systems. The strength of the pristine single layer graphene was found to be higher as compared to bilayer AA stacked graphene at all temperatures. It was observed at 1073 K and in the presence of vacancy defect the strength for single layer armchair sheet falls by 30% and for bilayer armchair sheet by 33% as compared to the pristine sheets at 300 K. The AB stacked graphene sheet was found to have a two-step rupture process. The strength of pristine AB sheet was found to decrease by 22% on increase of temperature from 300 K to 1073 K.

Layer-selective synthesis of bilayer graphene via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Ning; Choi, Kyoungjun; Robertson, John; Park, Hyung Gyu

2017-09-01

A controlled synthesis of high-quality AB-stacked bilayer graphene by chemical vapor deposition demands a detailed understanding of the mechanism and kinetics. By decoupling the growth of the two layers via a growth-and-regrowth scheme, we report the kinetics and termination mechanisms of the bilayer graphene growth on copper. We observe, for the first time, that the secondary layer growth follows Gompertzian kinetics. Our observations affirm the postulate of a time-variant transition from a mass-transport-limited to a reaction-limited regimes and identify the mechanistic disparity between the monolayer growth and the secondary-layer expansion underneath the monolayer cover. It is the continuous carbon supply that drives the expansion of the graphene secondary layer, rather than the initially captured carbon amount, suggesting an essential role of the surface diffusion of reactant adsorbates in the interspace between the top graphene layer and the underneath copper surface. We anticipate that the layer selectivity of the growth relies on the entrance energetics of the adsorbed reactants to the graphene-copper interspace across the primary-layer edge, which could be engineered by tailoring the edge termination state. The temperature-reliant saturation area of the secondary-layer expansion is understood as a result of competitive attachment of carbon and hydrogen adatoms to the secondary-layer graphene edge.

Adsorption of beryllium atoms and clusters both on graphene and in a bilayer of graphite investigated by DFT.

PubMed

Ferro, Yves; Fernandez, Nicolas; Allouche, Alain; Linsmeier, Christian

2013-01-09

We herein investigate the interaction of beryllium with a graphene sheet and in a bilayer of graphite by means of periodic DFT calculations. In all cases, we find the beryllium atoms to be more weakly bonded on graphene than in the bilayer. Be(2) forms both magnetic and non-magnetic structures on graphene depending on the geometrical configuration of adsorption. We find that the stability of the Be/bilayer system increases with the size of the beryllium clusters inserted into the bilayer of graphite. We also find a charge transfer from beryllium to the graphite layers. All these results are analysed in terms of electronic structure.

STM/STS studies of Ca-intercalated bilayer graphene

NASA Astrophysics Data System (ADS)

Shimizu, Ryota; Sugawara, Katsuaki; Kanetani, Kohei; Iwaya, Katsuya; Sato, Takafumi; Takahashi, Takashi; Hitosugi, Taro

2013-03-01

We have performed low temperature scanning tunneling microscopy/spectroscopy (STM/STS) measurements on a two-dimensional Ca-intercalated bilayer graphene epitaxially grown on a 6H-SiC(0001) substrate. The STM topographic images clearly resolve each intercalated Ca atom with graphene-based honeycomb lattice. Furthermore, we found a clear ×2.5 modulation in the topography, implying charge density wave or Moiré pattern originated from the interaction with the SiC substrate. Comparison with ARPES measurements provided us of further insight into the Fermi surface deduced from STS.

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Cui; Liu, Qingbin; Li, Jia

2014-11-03

We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer andmore » more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.« less

Chirality-Assisted Electronic Cloaking of Confined States in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Gu, Nan; Rudner, Mark; Levitov, Leonid

2011-10-01

We show that the strong coupling of pseudospin orientation and charge carrier motion in bilayer graphene has a drastic effect on transport properties of ballistic p-n-p junctions. Electronic states with zero momentum parallel to the barrier are confined under it for one pseudospin orientation, whereas states with the opposite pseudospin tunnel through the junction totally uninfluenced by the presence of confined states. We demonstrate that the junction acts as a cloak for confined states, making them nearly invisible to electrons in the outer regions over a range of incidence angles. This behavior is manifested in the two-terminal conductance as transmission resonances with non-Lorentzian, singular peak shapes. The response of these phenomena to a weak magnetic field or electric-field-induced interlayer gap can serve as an experimental fingerprint of electronic cloaking.

Revival of cloaking effect in a driven bilayer graphene vector barrier

NASA Astrophysics Data System (ADS)

Maiti, S.; Panigrahi, A.; Biswas, R.; Sinha, C.

2018-05-01

Transmission profiles in bilayer graphene are studied theoretically through a rectangular vector potential (magnetic) barrier with and without the presence of an oscillatory potential. Unlike the electrostatic barrier, the Fano resonances (FR) are noted in the transmission spectra both for normal and glancing incidences due to non-conservation of chirality for a static vector barrier. The results for normal incidence indicate that the cloaking effect is a manifestation of the chirality conservation in charge transport through bilayer graphene scalar barriers. It is also noted that the aforesaid FR for a static vector barrier might disappear (photon induced electronic cloaking effect) due to the predominant photon exchange processes in presence of an external oscillating potential. The study of Fano resonances in transmission spectrum is in high demand in respect of localization of charge carriers in graphene nano structures for its potential applications in digital device fabrications.

Josephson coupling between superconducting islands on single- and bi-layer graphene

NASA Astrophysics Data System (ADS)

Mancarella, Francesco; Fransson, Jonas; Balatsky, Alexander

2016-05-01

We study the Josephson coupling of superconducting (SC) islands through the surface of single-layer graphene (SLG) and bilayer graphene (BLG) in the long-junction regime, as a function of the distance between the grains, temperature, chemical potential and external (transverse) gate-voltage. For SLG, we provide a comparison with existing literature. The proximity effect is analyzed through a Matsubara Green’s function approach. This represents the first step in a discussion of the conditions for the onset of a granular superconductivity within the film, made possible by Josephson currents flowing between superconductors. To ensure phase coherence over the 2D sample, a random spatial distribution can be assumed for the SC islands on the SLG sheet (or intercalating the BLG sheets). The tunable gate-voltage-induced band gap of BLG affects the asymptotic decay of the Josephson coupling-distance characteristic for each pair of SC islands in the sample, which results in a qualitatively strong field dependence of the relation between Berezinskii-Kosterlitz-Thouless transition critical temperature and gate voltage.

Continuous and reversible tuning of the disorder-driven superconductor–insulator transition in bilayer graphene

PubMed Central

Lee, Gil-Ho; Jeong, Dongchan; Park, Kee-Su; Meir, Yigal; Cha, Min-Chul; Lee, Hu-Jong

2015-01-01

The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor–insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of the band gap and the charge carrier density. In the presence of a static disorder potential, Andreev-paired carriers formed close to the Fermi level in bilayer graphene constitute a randomly distributed network of proximity-induced superconducting puddles. The landscape of the network was easily tuned by electrical gating to induce percolative clusters at the onset of superconductivity. This is evidenced by scaling behavior consistent with the classical percolation in transport measurements. At lower temperatures, the solely electrical tuning of the disorder-induced landscape enables us to observe, for the first time, a crossover from classical to quantum percolation in a single device, which elucidates how thermal dephasing engages in separating the two regimes. PMID:26310774

Continuous and reversible tuning of the disorder-driven superconductor-insulator transition in bilayer graphene.

PubMed

Lee, Gil-Ho; Jeong, Dongchan; Park, Kee-Su; Meir, Yigal; Cha, Min-Chul; Lee, Hu-Jong

2015-08-27

The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor-insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of the band gap and the charge carrier density. In the presence of a static disorder potential, Andreev-paired carriers formed close to the Fermi level in bilayer graphene constitute a randomly distributed network of proximity-induced superconducting puddles. The landscape of the network was easily tuned by electrical gating to induce percolative clusters at the onset of superconductivity. This is evidenced by scaling behavior consistent with the classical percolation in transport measurements. At lower temperatures, the solely electrical tuning of the disorder-induced landscape enables us to observe, for the first time, a crossover from classical to quantum percolation in a single device, which elucidates how thermal dephasing engages in separating the two regimes.

Electromagnetic coupling of spins and pseudospins in bilayer graphene

NASA Astrophysics Data System (ADS)

Winkler, R.; Zülicke, U.

2015-03-01

We present a theoretical study of bilayer-graphene's electronic properties in the presence of electric and magnetic fields. In contrast to known materials, including single-layer graphene, any possible coupling of physical quantities to components of the electric field has a counterpart where the analogous component of the magnetic field couples to exactly the same quantities. For example, a purely electric spin splitting appears as the magneto-electric analogue of the magnetic Zeeman spin splitting. The measurable thermodynamic response induced by magnetic and electric fields is thus completely symmetric. The Pauli magnetization induced by a magnetic field takes exactly the same functional form as the polarization induced by an electric field. Although they seem counterintuitive, our findings are consistent with fundamental principles such as time reversal symmetry. For example, only a magnetic field can give rise to a macroscopic spin polarization, whereas only a perpendicular electric field can induce a macroscopic polarization of the sublattice-related pseudospin in bilayer graphene. These rules enforced by symmetry for the matter-field interactions clarify the nature of spins versus pseudospins. We have obtained numerical values of prefactors for relevant terms. NSF Grant DMR-1310199 and Marsden Fund Contract No. VUW0719.

Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakraborty, Biswanath; Das, Anindya; Sood, A. K.

2011-07-15

We report Raman study to investigate the influence of stacking on the inversion symmetry breaking in top gated bi- and multi-layer ({approx}10 layers) graphene field effect transistors. The G phonon mode splits into a low frequency (G{sub low}) and a high frequency (G{sub high}) mode in bi- and multi-layer graphene and the two modes show different dependence on doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons representing in-phase and out-of-phase inter-layer atomic motions. Unlike in bilayer graphene, there is no transfer of intensity from G{sub low} to G{sub high} in multilayer graphene. Amore » comparison is made for the bilayer graphene data with the recent theory of Gava et al. [Phys. Rev. B 80, 155422 (2009)].« less

Electronic structure and optical properties of graphene/stanene heterobilayer.

PubMed

Chen, Xianping; Meng, Ruishen; Jiang, Junke; Liang, Qiuhua; Yang, Qun; Tan, Chunjian; Sun, Xiang; Zhang, Shengli; Ren, Tianling

2016-06-28

The structural, electronic and optical properties of the graphene hybrid with stanene, the tin counterpart of graphene, are investigated by means of density functional calculation with the observation of band gap opening and enhanced visible light response. The lattice mismatch between graphene and stanene is taken into consideration and several stacking methods for model construction are proposed to study the possible effects. The Dirac feature can be observed in this bilayer system with relatively stronger interlayer interaction than weak van der Waals forces, which is ascribed to the unsaturated p orbital of stanene. Despite the mutual semi-metal nature of graphene and stanene, it is significant to note a band gap opening and the electrical neutrality of the bilayer. The combination of high carrier mobility of graphene and the excellent spin Hall effect of stanene is expected to coexist in the bilayer structure. In addition, we found that the stanene monolayer has a relatively lower work function than graphene and more importantly, it exhibits more pronounced optical absorption than graphene. The results indicate that a graphene/stanene heterobilayer will facilitate the performance of stanene related spintronic devices and is therefore a good candidate for photoelectronic devices.

Enhanced Andreev reflection in gapped graphene

NASA Astrophysics Data System (ADS)

Majidi, Leyla; Zareyan, Malek

2012-08-01

We theoretically demonstrate unusual features of superconducting proximity effect in gapped graphene that presents a pseudospin symmetry-broken ferromagnet with a net pseudomagnetization. We find that the presence of a band gap makes the Andreev conductance of graphene superconductor/pseudoferromagnet (S/PF) junction to behave similar to that of a graphene ferromagnet-superconductor junction. The energy gap ΔN can enhance the pseudospin inverted Andreev conductance of S/PF junction to reach a limiting maximum value for ΔN≫μ, which depending on the bias voltage can be larger than the value for the corresponding junction with no energy gap. We further demonstrate a damped-oscillatory behavior for the local density of states of the PF region of S/PF junction and a long-range crossed Andreev reflection process in PF/S/PF structure with antiparallel alignment of pseudomagnetizations of PFs, which confirm that, in this respect, the gapped normal graphene behaves like a ferromagnetic graphene.

Thermal Conductivity of Twisted Bilayer Graphene Nanoribbons from Non-equilibrium Molecular Dynamics Study.

NASA Astrophysics Data System (ADS)

Li, Chenyang; Su, Shanshan; Ge, Supeng; Lake, Roger

Misorientation of the two layers of bilayer graphene affects both the electronic properties and the vibrational modes or phonons. The phonon density of modes is little affected by misorientation, however, zone-folding can allow new Umklapp scattering processes that could affect the phonon transport and thermal conductivity. To investigate this, we use NEMD molecular dynamics simulations as implemented in LAMMPS to study the thermal conductivity of the misoriented graphene bilayers. Seven commensurate misorientation angles varying from 6.01º to 48.36º have modeled and analyzed to understand how the misorientation angle affects the thermal conductivity of relatively wide ( 10 nm) misoriented bilayer graphene nanoribbons (m-BLGNRs). Within numerical accuracy, we find that the thermal conductivity of the m-BLGNRs for all of the simulated commensurate angles have the same thermal conductivity with AB stacked and AA stacked BLGNRs. These results indicate that neither the misorientation angle nor the stacking order affect the thermal conductivity of BLGNRs. This work was supported as part by the NSF #1307671.

Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

PubMed

Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

2014-04-01

High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

In silico free energy predictions for ionic liquid-assisted exfoliation of a graphene bilayer into individual graphene nanosheets.

PubMed

Kamath, Ganesh; Baker, Gary A

2012-06-14

Free energies for graphene exfoliation from bilayer graphene using ionic liquids based on various cations paired with the bis(trifluoromethylsulfonyl)imide anion were determined from adaptive bias force-molecular dynamics (ABF-MD) simulation and fall in excellent qualitative agreement with experiment. This method has notable potential as an a priori screening tool for performance based rank order prediction of novel ionic liquids for the dispersion and exfoliation of various nanocarbons and inorganic graphene analogues.

Voltage tunable plasmon propagation in dual gated bilayer graphene

NASA Astrophysics Data System (ADS)

Farzaneh, Seyed M.; Rakheja, Shaloo

2017-10-01

In this paper, we theoretically investigate plasmon propagation characteristics in AB and AA stacked bilayer graphene (BLG) in the presence of energy asymmetry due to an electrostatic field oriented perpendicularly to the plane of the graphene sheet. We first derive the optical conductivity of BLG using the Kubo formalism incorporating energy asymmetry and finite electron scattering. All results are obtained for room temperature (300 K) operation. By solving Maxwell's equations in a dual gate device setup, we obtain the wavevector of propagating plasmon modes in the transverse electric (TE) and transverse magnetic (TM) directions at terahertz frequencies. The plasmon wavevector allows us to compare the compression factor, propagation length, and the mode confinement of TE and TM plasmon modes in bilayer and monolayer graphene sheets and also to study the impact of material parameters on plasmon characteristics. Our results show that the energy asymmetry can be harnessed to increase the propagation length of TM plasmons in BLG. AA stacked BLG shows a larger increase in the propagation length than AB stacked BLG; conversely, it is very insensitive to the Fermi level variations. Additionally, the dual gate structure allows independent modulation of the energy asymmetry and the Fermi level in BLG, which is advantageous for reconfiguring plasmon characteristics post device fabrication.

Raman spectra of bilayer graphene covered with Poly(methyl methacrylate) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia Minggang; Center on Experimental Physics, School of Science, Xi'an Jiaotong University, 710049; Su Zhidan

The Raman spectra of bilayer graphene covered with poly(methyl methacrylate) (PMMA) were investigated. Both the G and 2D peaks of PMMA-coated graphene were stiff and broad compared with those of uncovered graphene. This could be attributed to the residual strain induced by high-temperature baking during fabrication of the nanodevice. Furthermore, the two 2D peaks stiffened and broadened with increasing laser power, which is just the reverse to uncovered graphene. The stiffness is likely caused by graphene compression induced by the circular bubble of the thin PMMA film generated by laser irradiation. Our findings may contribute to the application of PMMAmore » in the strain engineering of graphene nanodevices.« less

Confining and repulsive potentials from effective non-Abelian gauge fields in graphene bilayers

NASA Astrophysics Data System (ADS)

González, J.

2016-10-01

We investigate the effect of shear and strain in graphene bilayers, under conditions where the distortion of the lattice gives rise to a smooth one-dimensional modulation in the stacking sequence of the bilayer. We show that strain and shear produce characteristic Moiré patterns which can have the same visual appearance on a large scale, but representing graphene bilayers with quite different electronic properties. The different features in the low-energy electronic bands can be ascribed to the effect of a fictitious non-Abelian gauge field mimicking the smooth modulation of the stacking order. Strained and sheared bilayers show a complementary behavior, which can be understood from the fact that the non-Abelian gauge field acts as a repulsive interaction in the former, expelling the electron density away from the stacking domain walls, while behaving as a confining interaction leading to localization of the electronic states in the sheared bilayers. In this latter case, the presence of the effective gauge field explains the development of almost flat low-energy bands, resembling the form of the zeroth Landau level characteristic of a Dirac fermion field. The estimate of the gauge field strength in those systems gives a magnitude of the order of several tens of tesla, implying a robust phenomenology that should be susceptible of being observed in suitably distorted bilayer samples.

Incorporating isolated molybdenum (Mo) atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

NASA Astrophysics Data System (ADS)

Huang, Han; Wan, Wen; Li, Hui; Wong, Swee Liang; Lv, Lu; Gao, Yongli; Wee, Andrew T. S.

2014-03-01

The atomic structures and electronic properties of isolated Mo atoms in bilayer epitaxial graphene (BLEG) on 4H-SiC(0001) are investigated by low temperature scanning tunneling microscopy (LT-STM). LT-STM results reveal that isolated Mo dopants prefer to substitute C atoms at α-sites, and preferentially locate between the graphene bilayers. First-principles calculations confirm that the embedding of single Mo dopants within BLEG is energetically favorable as compared to monolayer graphene. The calculated bandstructures show that Mo-doped BLEG is n-doped, and each Mo atom introduces a local magnetic moment of 1.81 μB. Our findings demonstrate a simple and stable method to incorporate single transition metal dopants into the graphene lattice to tune its electronic and magnetic properties for possible use in graphene spin devices. NRF-CRP (Singapore) grants R-143-000-360-281and R-144-000-295-281. ``Shenghua Professorship'' startup funding from CSU and the support from the NSF of China (Grant No.11304398).

Improvement of Ion/Ioff for h-BN encapsulated bilayer graphene by graphite local back gate electrode

NASA Astrophysics Data System (ADS)

Uwanno, Teerayut; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

The critical issue for bilayer graphene (BLG) devices is low Ion/Ioff even at the band gap of 0.3eV. Band gap in BLG can be formed by creating potential difference between the two layers of BLG. This can be done by applying external electric field perpendicularly to BLG to induce different carrier densities in the two layers. Due to such origin, the spatial uniformity of band gap in the channel is quite sensitive to charge inhomogeneity in BLG. In order to apply electric field of 3V/nm to open the maximum band gap of 0.3eV, high- k gate stack has been utilized so far. However, oxide dielectrics usually have large charge inhomogeneity causing in-plane potential fluctuation in BLG channel. Due to surface flatness and small charge inhomogeneity, h-BN has been used as dielectrics to achieve high quality graphene devices, however, Ion/Iofffor BLG/ h-BN heterostuctures has not been reported yet. In this study, we used graphite as local back gate electrode to BLG encapsulated with h-BN. This resulted in much higher Ion/Ioff, indicating the importance of screening of charge inhomogeneity from SiO2 substrate surface by local graphite back gate electrode. This research was partly supported by JSPS Core-to-Core Program, A. Advanced Research Networks.

Splitting of Van Hove singularities in slightly twisted bilayer graphene

NASA Astrophysics Data System (ADS)

Li, Si-Yu; Liu, Ke-Qin; Yin, Long-Jing; Wang, Wen-Xiao; Yan, Wei; Yang, Xu-Qin; Yang, Jun-Kai; Liu, Haiwen; Jiang, Hua; He, Lin

2017-10-01

A variety of new and interesting electronic properties have been predicted in graphene monolayer doped to Van Hove singularities (VHSs) of its density of state. However, tuning the Fermi energy to reach a VHS of graphene by either gating or chemical doping is prohibitively difficult, owing to their large energy distance (˜3 eV). This difficulty can be easily overcome in twisted bilayer graphene (TBG). By introducing a small twist angle between two adjacent graphene sheets, we are able to generate two low-energy VHSs arbitrarily approaching the Fermi energy. Here, we report experimental studies of electronic properties around the VHSs of a slightly TBG through scanning tunneling microscopy measurements. The split of the VHSs is observed and the spatial symmetry breaking of electronic states around the VHSs is directly visualized. These exotic results provide motivation for further theoretical and experimental studies of graphene systems around the VHSs.

Terahertz conductivity of twisted bilayer graphene

NASA Astrophysics Data System (ADS)

Chia, Elbert E. M.; Zou, Xingquan; Shang, Jingzhi; Leaw, Jianing; Luo, Zhiqiang; Luo, Liyan; Cheong, Siew Ann; Su, Haibin; Zhu, Jian-Xin; Castro Neto, A. H.; Yu, Ting

2013-03-01

Using terahertz time-domain spectroscopy, the real part of optical conductivity [σ1 (ω) ] of twisted bilayer graphene was obtained at different temperatures (10 - 300 K) in the frequency range 0.3 - 3 THz. On top of a Drude-like response, we see a strong and narrow peak in σ1 (ω) at ~2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, that is caused by the presence of van Hove singularities arising from a commensurate twisting of the two graphene layers. Singapore MOE AcRF Tier 2 (ARC 23/08), NRF-CRP (NRF-CRP4-2008-04), NNSA of the U.S. DOE at LANL (DE-AC52-06NA25396), LANL LDRD Program, NRF-CRP (R-144-000-295-281), DOE DE-FG02-08ER46512, ONR MURI N00014-09-1-1063.

Topological magnetic phase in LaMnO3 (111) bilayer

NASA Astrophysics Data System (ADS)

Weng, Yakui; Huang, Xin; Yao, Yugui; Dong, Shuai

Candidates for correlated topological insulators, originated from the spin-orbit coupling as well as Hubbard type correlation, are expected in the (111) bilayer of perovskite-structural transition-metal oxides. Based on the first-principles calculation and tight-binding model, the electronic structure of a LaMnO3 (111) bilayer sandwiched in LaScO3 barriers has been investigated. For the ideal undistorted perovskite structure, the Fermi energy of LaMnO3 (111) bilayer just stays at the Dirac point, rendering a semi-metal (graphene-like) which is also a half-metal (different from graphene nor previous studied LaNiO3 (111) bilayer). The Dirac cone can be opened by the spin-orbit coupling, giving rise to nontrivial topological bands corresponding to the (quantized) anomalous Hall effect. For the realistic orthorhombic distorted lattice, the Dirac point moves with increasing Hubbard repulsion (or equivalent Jahn-Teller distortion). Finally, a Mott gap opens, establishing a phase boundary between the Mott insulator and topological magnetic insulator. Our calculation finds that the gap opened by spin-orbit coupling is much smaller in the orthorhombic distorted lattice (~ 1 . 7 meV) than the undistorted one (~11 meV).

Aharonov-Bohm effect in bilayer graphene

NASA Astrophysics Data System (ADS)

Park, Chang-Soo

2017-06-01

We investigate Aharonov-Bohm effect in bilayer graphene. We consider a setup of n- p (n‧)-n junction with Aharonov-Bohm loop connected in the transmission region. In the presence of trigonal warping we show that, due to the anisotropic dispersion of eigenspectrum, the Aharonov-Bohm interference depends on the geometry of junction: it exists for armchair interface but vanishes for zigzag interface. For the armchair interface, it is demonstrated that the period of Aharonov-Bohm oscillation is Φ0 = h / e and the amplitude of oscillation can be varied with incident energy and the barrier height of the junction.

Nucleation of uniform mono- and bilayer epitaxial graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Wu, Xiaosong; Zhang, Rui; Dong, Yunliang; Guo, Shuai; Kong, Wenjie; Liao, Zhimin; Yu, Dapeng

2012-02-01

Early stage of epitaxial graphene growth on SiC(0001) has been investigated. Using the confinement controlled sublimation (CCS) method, we has achieved well controlled growth and been able to see the formation of mono- and bilayer graphene islands. The growth features reveal the intriguing growth mechanism. In particular, a new ``stepdown'' growth mode has been identified. Graphene can propagate tens of micrometers across many SiC steps, while, most importantly, step bunching is avoided and the initial regular stepped SiC surface morphology is preserved. The stepdown growth demonstrates a route towards uniform epitaxial graphene in wafer size without sacrificing the initial substrate surface morphology.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Belete, M.; Dentoni Litta, E.; Smith, A. D.; Lupina, G.; Lemme, M. C.; Östling, M.

2015-07-01

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 103 A cm-2 (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

Emergent Electromagnetism in Bilayer Graphene

NASA Astrophysics Data System (ADS)

Winkler, Roland; Zülicke, Ulrich

2013-03-01

Recently atomically flat layers of carbon known as graphene have become the rising star in spintronics as their electrons carry not only the ordinary spin degree of freedom, but they also have a pseudospin degree of freedom tied to the electrons' orbital motion which could enable new routes for spintronics. Here we focus on bilayer graphene (BLG). Using group theory we have established a complete description of how electrons in BLG interact with electric and magnetic fields. We show that electrons in BLG experience an unusual type of matter-field interactions where magnetic and electric fields are virtually equivalent: every coupling of an electron's degrees of freedom to a magnetic field is matched by an analogous coupling of the same degrees of freedom to an electric field. This counter-intuitive duality of matter-field interactions allows novel ways to create and manipulate spin and pseudo-spin polarizations via external fields that are not available in other materials. See arXiv:1206.4761. This work was supported by Marsden Fund contract no. VUW0719, administered by the Royal Society of New Zealand. Work at Argonne was supported by DOE BES under Contract No. DE-AC02-06CH11357.

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures.

PubMed

Burg, G William; Prasad, Nitin; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; MacDonald, Allan H; Register, Leonard F; Tutuc, Emanuel

2018-04-27

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe_{2} barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers.

Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures

NASA Astrophysics Data System (ADS)

Burg, G. William; Prasad, Nitin; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; MacDonald, Allan H.; Register, Leonard F.; Tutuc, Emanuel

2018-04-01

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe2 barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers.

Extension of the Mott-Gurney Law for a Bilayer Gap

NASA Astrophysics Data System (ADS)

Dubinov, A. E.; Kitayev, I. N.

2018-04-01

Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott-Gurney law for a bilayer diode).

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupledmore » plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.« less

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

2016-01-01

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

Strain-induced band-gap engineering of graphene monoxide and its effect on graphene

NASA Astrophysics Data System (ADS)

Pu, H. H.; Rhim, S. H.; Hirschmugl, C. J.; Gajdardziska-Josifovska, M.; Weinert, M.; Chen, J. H.

2013-02-01

Using first-principles calculations we demonstrate the feasibility of band-gap engineering in two-dimensional crystalline graphene monoxide (GMO), a recently reported graphene-based material with a 1:1 carbon/oxygen ratio. The band gap of GMO, which can be switched between direct and indirect, is tunable over a large range (0-1.35 eV) for accessible strains. Electron and hole transport occurs predominantly along the zigzag and armchair directions (armchair for both) when GMO is a direct- (indirect-) gap semiconductor. A band gap of ˜0.5 eV is also induced in graphene at the K' points for GMO/graphene hybrid systems.

Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Bin; Wang, Peng; Pan, Cheng

2015-07-20

When graphene is placed on hexagonal boron nitride with a twist angle, new properties develop due to the resulting moiré superlattice. Here, we report a method using Raman spectroscopy to make rapid, non-destructive measurements of the twist angle between bilayer graphene and hexagonal boron nitride. The lattice orientation is determined by using flakes with both bilayer and monolayer regions, and using the known Raman signature for the monolayer to measure the twist angle of the entire flake. The widths of the second order Raman peaks are found to vary linearly in the superlattice period and are used to determine themore » twist angle. The results are confirmed by using transport measurements to infer the superlattice period by the charge density required to reach the secondary resistance peaks. Small twist angles are also found to produce a significant modification of the first order Raman G band peak.« less

Twisted bilayer graphene photoluminescence emission peaks at van Hove singularities.

PubMed

Alencar, Thonimar V; von Dreifus, Driele; Gabriela Cota Moreira, Maria; Eliel, Gomes S N; Yeh, Chao-Hui; Chiu, Po-Wen; Pimenta, Marcos A; Malard, Leandro M; Maria de Paula, Ana

2018-05-02

We report on photoluminescence emission imaging by femtosecond laser excitation on twisted bilayer graphene samples. The emission images are obtained by tuning the excitation laser energies in the near infrared region. We demonstrate an increase of the photoluminescence emission at excitation energies that depends on the bilayer twist angle. The results show a peak for the light emission when the excitation is in resonance with transitions at the van Hove singularities in the electronic density of states. We measured the photoluminescence excitation peak position and width for samples with various twist angles showing resonances in the energy range of 1.2 to 1.7 eV.

Twisted bilayer graphene photoluminescence emission peaks at van Hove singularities

NASA Astrophysics Data System (ADS)

Alencar, Thonimar V.; von Dreifus, Driele; Cota Moreira, Maria Gabriela; Eliel, Gomes S. N.; Yeh, Chao-Hui; Chiu, Po-Wen; Pimenta, Marcos A.; Malard, Leandro M.; de Paula, Ana Maria

2018-05-01

We report on photoluminescence emission imaging by femtosecond laser excitation on twisted bilayer graphene samples. The emission images are obtained by tuning the excitation laser energies in the near infrared region. We demonstrate an increase of the photoluminescence emission at excitation energies that depends on the bilayer twist angle. The results show a peak for the light emission when the excitation is in resonance with transitions at the van Hove singularities in the electronic density of states. We measured the photoluminescence excitation peak position and width for samples with various twist angles showing resonances in the energy range of 1.2 to 1.7 eV.

Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.

PubMed

Hu, Xiaohui; Kou, Liangzhi; Sun, Litao

2016-08-16

The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report that the direct band gap can be achieved in bilayer MoSe2-WSe2 lateral heterostructures by alternating stacking orders. Specifically, when Se atoms from opposite layers are stacked directly on top of each other, AA and A'B stacked heterostructures show weaker interlayer coupling, larger interlayer distance and direct band gap. Whereas, when Se atoms from opposite layers are staggered, AA', AB and AB' stacked heterostructures exhibit stronger interlayer coupling, shorter interlayer distance and indirect band gap. Thus, the direct/indirect band gap can be controllable in bilayer MoSe2-WSe2 lateral heterostructures. In addition, the calculated sliding barriers indicate that the stacking orders of bilayer MoSe2-WSe2 lateral heterostructures can be easily formed by sliding one layer with respect to the other. The novel direct band gap in bilayer MoSe2-WSe2 lateral heterostructures provides possible application for high-efficiency optoelectronic devices. The results also show that the stacking order is an effective strategy to induce and tune the band gap of layered STMDs.

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer

NASA Astrophysics Data System (ADS)

Sanchez-Yamagishi, Javier D.; Luo, Jason Y.; Young, Andrea F.; Hunt, Benjamin M.; Watanabe, Kenji; Taniguchi, Takashi; Ashoori, Raymond C.; Jarillo-Herrero, Pablo

2017-02-01

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong non-local transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Unlike other approaches used for realizing helical states, the graphene electron-hole bilayer can be used to build new 1D systems incorporating fractional edge states. Indeed, we are able to tune the bilayer devices into a regime hosting fractional and integer edge states of opposite chiralities, paving the way towards 1D helical conductors with fractional quantum statistics.

Tunable phonon-induced transparency in bilayer graphene nanoribbons.

PubMed

Yan, Hugen; Low, Tony; Guinea, Francisco; Xia, Fengnian; Avouris, Phaedon

2014-08-13

In the phenomenon of plasmon-induced transparency, which is a classical analogue of electromagnetically induced transparency (EIT) in atomic gases, the coherent interference between two plasmon modes results in an optical transparency window in a broad absorption spectrum. With the requirement of contrasting lifetimes, typically one of the plasmon modes involved is a dark mode that has limited coupling to the electromagnetic radiation and possesses relatively longer lifetime. Plasmon-induced transparency not only leads to light transmission at otherwise opaque frequency regions but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this article, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the dark plasmon mode in the plasmon-induced transparency. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm(-1), based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon nonlinear optics and slow light in this novel two-dimensional material.

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

PubMed

Hattori, Azusa N; Okamoto, Takeshi; Sadakuni, Shun; Murata, Junji; Oi, Hideo; Arima, Kenta; Sano, Yasuhisa; Hattori, Ken; Daimon, Hiroshi; Endo, Katsuyoshi; Yamauchi, Kazuto

2011-04-01

Monolayer and bilayer graphene films with a few hundred nm domain size were grown on ultraprecision figured 4H-SiC(0001) on-axis and 8 degrees -off surfaces by annealing in ultra-high vacuum. Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, reflection high-energy electron diffraction, low-energy electron diffraction (LEED), Raman spectroscopy, and scanning tunneling microscopy, we investigated the structure, number of graphene layers, and chemical bonding of the graphene surfaces. Moreover, the magnetic property of the monolayer graphene was studied using in-situ surface magneto-optic Kerr effect at 40 K. LEED spots intensity distribution and XPS spectra for monolayer and bilayer graphene films could become an obvious and accurate fingerprint for the determination of graphene film thickness on SiC surface.

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

NASA Astrophysics Data System (ADS)

Wang, Qingyan; Zhang, Wenhao; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qikun

2013-03-01

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates.

PubMed

Wang, Qingyan; Zhang, Wenhao; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qikun

2013-03-06

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.

Hybrid matrix method for stable numerical analysis of the propagation of Dirac electrons in gapless bilayer graphene superlattices

NASA Astrophysics Data System (ADS)

Briones-Torres, J. A.; Pernas-Salomón, R.; Pérez-Álvarez, R.; Rodríguez-Vargas, I.

2016-05-01

Gapless bilayer graphene (GBG), like monolayer graphene, is a material system with unique properties, such as anti-Klein tunneling and intrinsic Fano resonances. These properties rely on the gapless parabolic dispersion relation and the chiral nature of bilayer graphene electrons. In addition, propagating and evanescent electron states coexist inherently in this material, giving rise to these exotic properties. In this sense, bilayer graphene is unique, since in most material systems in which Fano resonance phenomena are manifested an external source that provides extended states is required. However, from a numerical standpoint, the presence of evanescent-divergent states in the eigenfunctions linear superposition representing the Dirac spinors, leads to a numerical degradation (the so called Ωd problem) in the practical applications of the standard Coefficient Transfer Matrix (K) method used to study charge transport properties in Bilayer Graphene based multi-barrier systems. We present here a straightforward procedure based in the hybrid compliance-stiffness matrix method (H) that can overcome this numerical degradation. Our results show that in contrast to standard matrix method, the proposed H method is suitable to study the transmission and transport properties of electrons in GBG superlattice since it remains numerically stable regardless the size of the superlattice and the range of values taken by the input parameters: the energy and angle of the incident electrons, the barrier height and the thickness and number of barriers. We show that the matrix determinant can be used as a test of the numerical accuracy in real calculations.

Adsorption configurations and scanning voltage determined STM images of small hydrogen clusters on bilayer graphene.

PubMed

Cao, Teng Fei; Huang, Liang Feng; Zheng, Xiao Hong; Zhou, Wang Huai; Zeng, Zhi

2013-11-21

By density functional theory calculations, the scanning tunneling microscopy (STM) images of various hydrogen clusters adsorbed on bilayer-graphene are systematically simulated. The hydrogen configurations of the STM images observed in the experiments have been thoroughly figured out. In particular, two kinds of hydrogen dimers (ortho-dimer, para-dimer) and two kinds of tetramers (tetramer-A, -B) are determined to be the hydrogen configurations corresponding to the ellipsoidal-like STM images with different structures and sizes. One particular hexamer (hexamer-B) is the hydrogen configuration generating the star-like STM images. For each hydrogen cluster, the simulated STM images show unique voltage-dependent features, which provides a feasible way to determine hydrogen adsorption states on graphene or graphite surface in the experiments by varying-voltage measurements. Stability analysis proves that the above determined hydrogen configurations are quite stable on graphene, hence they are likely to be detected in the STM experiments. Consequently, through systematic analysis of the STM images and the stability of hydrogen clusters on bilayer graphene, many experimental observations have been consistently explained.

The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons

NASA Astrophysics Data System (ADS)

Mohammadi, Amin; Haji-Nasiri, Saeed

2018-04-01

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of perfect and defected bilayer armchair graphene nanoribbons (BAGNRs) under finite bias. Two typical defects which are placed in the middle of top layer (i.e. single vacancy (SV) and stone wale (SW) defects) are examined. The results reveal that in both perfect and defected bilayers, the maximum current refers to β-AB, AA and α-AB stacking orders, respectively, since the intermolecular interactions are stronger in them. Moreover it is observed that a SV decreases the current in all stacking orders, but the effects of a SW defect is nearly unpredictable. Besides, we introduced a sequential switching behavior and the effects of defects on the switching performance is studied as well. We found that a SW defect can significantly improve the switching behavior of a bilayer system. Transmission spectrum, band structure, molecular energy spectrum and molecular projected self-consistent Hamiltonian (MPSH) are analyzed subsequently to understand the electronic transport properties of these bilayer devices which can be used in developing nano-scale bilayer systems.

Competing Gap Opening Mechanisms of Monolayer Graphene and Graphene Nanoribbons on Strong Topological Insulators.

PubMed

Lin, Zhuonan; Qin, Wei; Zeng, Jiang; Chen, Wei; Cui, Ping; Cho, Jun-Hyung; Qiao, Zhenhua; Zhang, Zhenyu

2017-07-12

Graphene is a promising material for designing next-generation electronic and valleytronic devices, which often demand the opening of a bandgap in the otherwise gapless pristine graphene. To date, several conceptually different mechanisms have been extensively exploited to induce bandgaps in graphene, including spin-orbit coupling and inversion symmetry breaking for monolayer graphene, and quantum confinement for graphene nanoribbons (GNRs). Here, we present a multiscale study of the competing gap opening mechanisms in a graphene overlayer and GNRs proximity-coupled to topological insulators (TIs). We obtain sizable graphene bandgaps even without inversion symmetry breaking and identify the Kekulé lattice distortions caused by the TI substrates to be the dominant gap opening mechanism. Furthermore, Kekulé distorted armchair GNRs display intriguing nonmonotonous gap dependence on the nanoribbon width, resulting from the coexistence of quantum confinement, edge passivation, and Kekulé distortions. The present study offers viable new approaches for tunable bandgap engineering in graphene and GNRs.

Bilayered graphene/h-BN with folded holes as new nanoelectronic materials: modeling of structures and electronic properties

PubMed Central

Chernozatonskii, Leonid A.; Demin, Viсtor A.; Bellucci, Stefano

2016-01-01

The latest achievements in 2-dimensional (2D) material research have shown the perspective use of sandwich structures in nanodevices. We demonstrate the following generation of bilayer materials for electronics and optoelectronics. The atomic structures, the stability and electronic properties of Moiré graphene (G)/h-BN bilayers with folded nanoholes have been investigated theoretically by ab-initio DFT method. These perforated bilayers with folded hole edges may present electronic properties different from the properties of both graphene and monolayer nanomesh structures. The closing of the edges is realized by C-B(N) bonds that form after folding the borders of the holes. Stable ≪round≫ and ≪triangle≫ holes organization are studied and compared with similar hole forms in single layer graphene. The electronic band structures of the considered G/BN nanomeshes reveal semiconducting or metallic characteristics depending on the sizes and edge terminations of the created holes. This investigation of the new types of G/BN nanostructures with folded edges might provide a directional guide for the future of this emerging area. PMID:27897237

DMRG study of fractional quantum Hall effect and valley skyrmions in graphene

NASA Astrophysics Data System (ADS)

Shibata, Naokazu

2011-12-01

The ground state and low-energy excitations of graphene and its bilayer are investigated by the density matrix renormalization group (DMRG) method. We analyze the effect of Coulomb interaction between the electrons including valley degrees of freedoms. The obtained results show finite charge excitation gap at various fractional fillings νn = 1/3, 2/5, 2/3 in the n = 0 and 1 Landau levels of single-layer graphene (SLG) and n = 2 Landau level of bilayer graphene (BLG). The lowest charge excitations at ν = 1/3, and 1 in SLG are valley skyrmions.

Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

PubMed

Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

2014-11-25

Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

Synthesis of Bilayer Graphene on 90/10 Copper (Cu)/Nickel (Ni) Alloy and Transfer by Electrochemical Delamination

DTIC Science & Technology

2017-09-01

C) and slow decomposition rate in methane (CH4).11 Cu alone has sometimes been shown to form incomplete bilayers with a significant fraction of...argon BLG bilayer graphene C carbon CH4 methane Cu2O cuprous oxide Cu copper CVD chemical vapor deposition DI deionized FeCl3 iron

Electronic properties of graphene nano-flakes: energy gap, permanent dipole, termination effect, and Raman spectroscopy.

PubMed

Singh, Sandeep Kumar; Neek-Amal, M; Peeters, F M

2014-02-21

The electronic properties of graphene nano-flakes (GNFs) with different edge passivation are investigated by using density functional theory. Passivation with F and H atoms is considered: C(N(c)) X(N(x)) (X = F or H). We studied GNFs with 10 < Nc < 56 and limit ourselves to the lowest energy configurations. We found that: (i) the energy difference Δ between the highest occupied molecular orbital and the lowest unoccupied molecular orbital decreases with Nc, (ii) topological defects (pentagon and heptagon) break the symmetry of the GNFs and enhance the electric polarization, (iii) the mutual interaction of bilayer GNFs can be understood by dipole-dipole interaction which were found sensitive to the relative orientation of the GNFs, (iv) the permanent dipoles depend on the edge terminated atom, while the energy gap is independent of it, and (v) the presence of heptagon and pentagon defects in the GNFs results in the largest difference between the energy of the spin-up and spin-down electrons which is larger for the H-passivated GNFs as compared to F-passivated GNFs. Our study shows clearly the effect of geometry, size, termination, and bilayer on the electronic properties of small GNFs. This study reveals important features of graphene nano-flakes which can be detected using Raman spectroscopy.

DC conductivity of twisted bilayer graphene: Angle-dependent transport properties and effects of disorder

NASA Astrophysics Data System (ADS)

Andelković, M.; Covaci, L.; Peeters, F. M.

2018-03-01

The in-plane dc conductivity of twisted bilayer graphene is calculated using an expansion of the real-space Kubo-Bastin conductivity in terms of Chebyshev polynomials. We investigate within a tight-binding approach the transport properties as a function of rotation angle, applied perpendicular electric field, and vacancy disorder. We find that for high-angle twists, the two layers are effectively decoupled, and the minimum conductivity at the Dirac point corresponds to double the value observed in monolayer graphene. This remains valid even in the presence of vacancies, hinting that chiral symmetry is still preserved. On the contrary, for low twist angles, the conductivity at the Dirac point depends on the twist angle and is not protected in the presence of disorder. Furthermore, for low angles and in the presence of an applied electric field, we find that the chiral boundary states emerging between AB and BA regions contribute to the dc conductivity, despite the appearance of localized states in the AA regions. The results agree qualitatively with recent transport experiments in low-angle twisted bilayer graphene.

Selectively enhanced photocurrent generation in twisted bilayer graphene with van Hove singularity

PubMed Central

Yin, Jianbo; Wang, Huan; Peng, Han; Tan, Zhenjun; Liao, Lei; Lin, Li; Sun, Xiao; Koh, Ai Leen; Chen, Yulin; Peng, Hailin; Liu, Zhongfan

2016-01-01

Graphene with ultra-high carrier mobility and ultra-short photoresponse time has shown remarkable potential in ultrafast photodetection. However, the broad and weak optical absorption (∼2.3%) of monolayer graphene hinders its practical application in photodetectors with high responsivity and selectivity. Here we demonstrate that twisted bilayer graphene, a stack of two graphene monolayers with an interlayer twist angle, exhibits a strong light–matter interaction and selectively enhanced photocurrent generation. Such enhancement is attributed to the emergence of unique twist-angle-dependent van Hove singularities, which are directly revealed by spatially resolved angle-resolved photoemission spectroscopy. When the energy interval between the van Hove singularities of the conduction and valance bands matches the energy of incident photons, the photocurrent generated can be significantly enhanced (up to ∼80 times with the integration of plasmonic structures in our devices). These results provide valuable insight for designing graphene photodetectors with enhanced sensitivity for variable wavelength. PMID:26948537

Channel morphology effect on water transport through graphene bilayers

PubMed Central

Liu, Bo; Wu, Renbing; Law, Adrian Wing-Keung; Feng, Xi-Qiao; Bai, Lichun; Zhou, Kun

2016-01-01

The application of few-layered graphene-derived functional thin films for molecular filtration and separation has recently attracted intensive interests. In practice, the morphology of the nanochannel formed by the graphene (GE) layers is not ideally flat and can be affected by various factors. This work investigates the effect of channel morphology on the water transport behaviors through the GE bilayers via molecular dynamics simulations. The simulation results show that the water flow velocity and transport resistance highly depend on the curvature of the graphene layers, particularly when they are curved in non-synergic patterns. To understand the channel morphology effect, the distributions of water density, dipole moment orientation and hydrogen bonds inside the channel are investigated, and the potential energy surface with different distances to the basal GE layer is analyzed. It shows that the channel morphology significantly changes the distribution of the water molecules and their orientation and interaction inside the channel. The energy barrier for water molecules transport through the channel also significantly depends on the channel morphology. PMID:27929106

Channel morphology effect on water transport through graphene bilayers.

PubMed

Liu, Bo; Wu, Renbing; Law, Adrian Wing-Keung; Feng, Xi-Qiao; Bai, Lichun; Zhou, Kun

2016-12-08

The application of few-layered graphene-derived functional thin films for molecular filtration and separation has recently attracted intensive interests. In practice, the morphology of the nanochannel formed by the graphene (GE) layers is not ideally flat and can be affected by various factors. This work investigates the effect of channel morphology on the water transport behaviors through the GE bilayers via molecular dynamics simulations. The simulation results show that the water flow velocity and transport resistance highly depend on the curvature of the graphene layers, particularly when they are curved in non-synergic patterns. To understand the channel morphology effect, the distributions of water density, dipole moment orientation and hydrogen bonds inside the channel are investigated, and the potential energy surface with different distances to the basal GE layer is analyzed. It shows that the channel morphology significantly changes the distribution of the water molecules and their orientation and interaction inside the channel. The energy barrier for water molecules transport through the channel also significantly depends on the channel morphology.

Creation of quasi-Dirac points in the Floquet band structure of bilayer graphene.

PubMed

Cheung, W M; Chan, K S

2017-06-01

We study the Floquet quasi-energy band structure of bilayer graphene when it is illuminated by two laser lights with frequencies [Formula: see text] and [Formula: see text] using Floquet theory. We focus on the dynamical gap formed by the conduction band with Floquet index  =  -1 and the valence band with Floquet index  =  +1 to understand how Dirac points can be formed. It is found that the dynamical gap does not have rotation symmetry in the momentum space, and quasi-Dirac points, where the conduction and valence bands almost touch, can be created when the dynamical gap closes along some directions with suitably chosen radiation parameters. We derive analytical expressions for the direction dependence of the dynamical gaps using Lowdin perturbation theory to gain a better understanding of the formation of quasi-Dirac points. When both radiations are circularly polarized, the gap can be exactly zero along some directions, when only the first and second order perturbations are considered. Higher order perturbations can open a very small gap in this case. When both radiations are linearly polarized, the gap can be exactly zero up to the fourth order perturbation and more than one quasi-Dirac point is formed. We also study the electron velocity around a dynamical gap and show that the magnitude of the velocity drops to values close to zero when the k vector is near to the gap minimum. The direction of the velocity also changes around the gap minimum, and when the gap is larger in value the change in the velocity direction is more gradual. The warping effect does not affect the formation of a Dirac point along the k x axis, while it prevents its formation when there is phase shift between the two radiations.

Phonon-induced renormalization of the electron spectrum of biased bilayer graphene

NASA Astrophysics Data System (ADS)

Kryuchkov, S. V.; Kukhar, E. I.

2018-05-01

The effect of the electron-phonon interaction on the electron subsystem of the bilayer graphene has been investigated in the case when there is a potential bias between the graphene layers. The electron-phonon interaction has been shown to lead to increasing of the curvature of the lower dispersion branch of the conduction band of the bigraphene in the vicinity of the Dirac point. The latter corresponds to the decreasing of the absolute value of the electron effective mass. The corresponding correction to the effective mass has been calculated. Dependence of this correction on the bias has been investigated. Influence of such effect on the bigraphene conductivity is discussed.

Graphene-polydimethylsiloxane/chromium bilayer-based flexible, reversible, and large bendable photomechanical actuators

NASA Astrophysics Data System (ADS)

Leeladhar; Raturi, Parul; Kumar, Ajeet; Singh, J. P.

2017-09-01

We demonstrate the fabrication of highly versatile photomechanical actuators based on graphene-polymer/metal bilayers that offers fast, low-cost fabrication, large deflection, reversible actuation under zero applied pre-strain, and wavelength-selective response. The photomechanical actuator consists of a graphene nanoplatelet (GNP)-polydimethylsiloxane (PDMS) nanocomposite with a thin chromium metal coating of 35 nm thickness on the backside of the structure. The photomechanical response of the GNP-PDMS/Cr photomechanical actuator was measured by recording the variation of the bending angle upon infrared (IR) light illumination. The bending in the bilayer actuator is caused by the generation of thermal stress due to the large mismatch (the ratio being 1/20) of the thermal expansion coefficient between the two layers as a result of IR absorption by GNPs and a subsequent increase in the local temperature. The maximum bending angle was found to be about 40 degrees with a corresponding large deflection value of about 6-7 mm within 6 s for IR illumination with an intensity of 550 mW cm-2. The corresponding actuation response and relaxation times were about 1 and 3 s, respectively. The GNP-PDMS/Cr bilayer combination when integrated with the standard surface micromachining technique of micro-electromechanical system fabrication can find useful applications in the realization of micro soft-robotics, controlled drug delivery, and light-driven micro switches i.e. micro-optomechanical systems.

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

NASA Astrophysics Data System (ADS)

Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

2018-04-01

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

Ultrafast Spectral Photoresponse of Bilayer Graphene: Optical Pump-Terahertz Probe Spectroscopy.

PubMed

Kar, Srabani; Nguyen, Van Luan; Mohapatra, Dipti R; Lee, Young Hee; Sood, A K

2018-02-27

Photoinduced terahertz conductivity Δσ(ω) of Bernal stacked bilayer graphene (BLG) with different dopings is measured by time-resolved optical pump terahertz probe spectroscopy. The real part of photoconductivity Δσ(ω) (Δσ Re (ω)) is positive throughout the spectral range 0.5-2.5 THz in low-doped BLG. This is in sharp contrast to Δσ(ω) for high-doped bilayer graphene where Δσ Re (ω) is negative at low frequency and positive on the high frequency side. We use Boltzmann transport theory to understand quantitatively the frequency dependence of Δσ(ω), demanding the energy dependence of different scattering rates such as short-range impurity scattering, Coulomb scattering, carrier-acoustic phonon scattering, and substrate surface optical phonon scattering. We find that the short-range disorder scattering dominates over other processes. The calculated photoconductivity captures very well the experimental conductivity spectra as a function of lattice temperature varying from 300 to 4 K, without any empirical fitting procedures adopted so far in the literature. This helps us to understand the intraband conductivity of photoexcited hot carriers in 2D materials.

Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rout, G. C., E-mail: siva1987@iopb.res.in, E-mail: skp@iopb.res.in, E-mail: gcr@iopb.res.in; Sahu, Sivabrata; Panda, S. K.

2016-04-13

We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution ofmore » the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).« less

Edge functionalised & Li-intercalated 555-777 defective bilayer graphene for the adsorption of CO2 and H2O

NASA Astrophysics Data System (ADS)

Lalitha, Murugan; Lakshmipathi, Senthilkumar; Bhatia, Suresh K.

2017-04-01

The adsorption of CO2 and H2O on divacanacy (DV) defected graphene cluster, and its bilayer counterpart is investigated using first-principles calculations. Both single and bilayer DV graphene cluster, are functionalised with H and F atoms. On these sheets the gas molecules are physisorbed, and the divacancy defect effectively improves the adsorption of CO2, while fluorination enhances the hydrophobicity of the graphene cluster. Among the convex and concave curvature regions induced due to the DV defect, the adsorption of the gas molecules on the concave meniscus is more favourable. Fluorine termination induces 73% reduction in Henry law constants for H2O, while for the CO2 molecule it increases by 8%, which indicates the DV defective sheet is a better candidate for CO2 capture compared to the STW defective sheet. Besides, both AA and AB divacant defect bilayer sheets are equally stable, wherein AA stacking results in a cavity between the sheets, while in AB stacking, the layers slide one over the other. Nevertheless, both these bilayer sheets are comparatively stabler than the monolayer. However, intercalation of lithium decreases the interlayer separation, particularly in AA stacking, which enhances the CO2 adsorption, but in the Bernal stacking enhances it hydrophobicity.

Screening effect of graphite and bilayer graphene on excitons in MoSe2 monolayer

NASA Astrophysics Data System (ADS)

Wang, Yuan; Zhang, Shuai; Huang, Di; Cheng, Jingxin; Li, Yingguo; Wu, Shiwei

2017-03-01

Excitons in transition metal dichalcogenide monolayer have recently attracted great interest due to their extremely large binding energy, causing giant bandgap renormalization. In this work, we examined the screening effect of graphite and bilayer graphene on the excitons in molybdenum diselenide (MoSe2) monolayer grown by molecular beam epitaxy (MBE). Through the combinational study of scanning tunneling spectroscopy (STS) and photoluminescence (PL) measurements, we determined the binding energy of ~0.58 eV for MoSe2 monolayer on both substrates at 16 K, and no obvious difference between them. Our result is consistent with a previous report [Zhang et al 2015 Nano Letters 15, 6494], but is contradictory to another one [Ugeda 2014 Nature Materials 13, 1091]. Physical picture for no noticeable difference on screening effect between bilayer graphene and graphite substrate is discussed. Possible reasons for causing the discrepancy are also mentioned.

Band gap engineering for graphene by using Na{sup +} ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, S. J.; Lee, P. R.; Kim, J. G.

2014-08-25

Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E{sub g}) at DP in a controlled way by depositing positively charged Na{sup +} ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na{sup +} ions is found to deplete the π* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E{sub g}.more » The band gap increases with increasing Na{sup +} coverage with a maximum E{sub g}≥0.70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na{sup +} ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na{sup +} ions, which may play a vital role in utilizing graphene in future nano-electronic devices.« less

Real-Space Imaging of the Tailored Plasmons in Twisted Bilayer Graphene

NASA Astrophysics Data System (ADS)

Hu, F.; Das, Suprem R.; Luan, Y.; Chung, T.-F.; Chen, Y. P.; Fei, Z.

2017-12-01

We report a systematic plasmonic study of twisted bilayer graphene (TBLG)—two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of single-layer graphene. At larger twist angles, the plasmon wavelength of TBLG increases significantly with apparently lower damping. Further analysis and modeling indicate that the observed twist-angle dependence of TBLG plasmons in the Dirac linear regime is mainly due to the Fermi-velocity renormalization, a direct consequence of interlayer electronic coupling. Our work unveils the tailored plasmonic characteristics of TBLG and deepens our understanding of the intriguing nano-optical physics in novel van der Waals coupled two-dimensional materials.

Real-Space Imaging of the Tailored Plasmons in Twisted Bilayer Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, F.; Das, Suprem R.; Luan, Y.

Here, we report a systematic plasmonic study of twisted bilayer graphene (TBLG)—two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of single-layer graphene. At larger twist angles, the plasmon wavelength of TBLG increases significantly with apparently lower damping. Further analysis and modeling indicate that the observed twist-angle dependence of TBLG plasmons in the Dirac linear regime is mainly duemore » to the Fermi-velocity renormalization, a direct consequence of interlayer electronic coupling. Our work unveils the tailored plasmonic characteristics of TBLG and deepens our understanding of the intriguing nano-optical physics in novel van der Waals coupled two-dimensional materials.« less

Real-Space Imaging of the Tailored Plasmons in Twisted Bilayer Graphene

DOE PAGES

Hu, F.; Das, Suprem R.; Luan, Y.; ...

2017-12-13

Here, we report a systematic plasmonic study of twisted bilayer graphene (TBLG)—two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of single-layer graphene. At larger twist angles, the plasmon wavelength of TBLG increases significantly with apparently lower damping. Further analysis and modeling indicate that the observed twist-angle dependence of TBLG plasmons in the Dirac linear regime is mainly duemore » to the Fermi-velocity renormalization, a direct consequence of interlayer electronic coupling. Our work unveils the tailored plasmonic characteristics of TBLG and deepens our understanding of the intriguing nano-optical physics in novel van der Waals coupled two-dimensional materials.« less

Topological induced valley polarization in bilayer graphene/Boron Nitride

NASA Astrophysics Data System (ADS)

Basile, Leonardo; Idrobo, Juan C.

2015-03-01

Novel electronic devices relay in our ability to control internal quantum degrees of freedom of the electron e.g., its spin. The valley number degree of freedom is a pseudospin that labels degenerate eigenstates at local maximum/minimum on the valence/conduction band. Valley polarization, that is, selective electronic localization in a momentum valley and its manipulation can be achieved by means of circular polarized light (CPL) in a system with strong spin-orbit coupling (SOC). In this talk, we will show theoretically that despite the fact that neither graphene or BN have a strong SOC, a bilayer of graphene on BN oriented at a twist angle has different absorption for right- and left- CPL. This induced polarization occurs due to band folding of the electronic bands, i.e., it has a topological origin. This research was supported EPN multidisciplinary grant and by DOE SUFD MSED.

Electronic properties of graphene nano-flakes: Energy gap, permanent dipole, termination effect, and Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Sandeep Kumar, E-mail: SandeepKumar.Singh@uantwerpen.be; Peeters, F. M., E-mail: Francois.Peeters@uantwerpen.be; Neek-Amal, M., E-mail: neekamal@srttu.edu

2014-02-21

The electronic properties of graphene nano-flakes (GNFs) with different edge passivation are investigated by using density functional theory. Passivation with F and H atoms is considered: C{sub N{sub c}} X{sub N{sub x}} (X = F or H). We studied GNFs with 10 < N{sub c} < 56 and limit ourselves to the lowest energy configurations. We found that: (i) the energy difference Δ between the highest occupied molecular orbital and the lowest unoccupied molecular orbital decreases with N{sub c}, (ii) topological defects (pentagon and heptagon) break the symmetry of the GNFs and enhance the electric polarization, (iii) the mutual interactionmore » of bilayer GNFs can be understood by dipole-dipole interaction which were found sensitive to the relative orientation of the GNFs, (iv) the permanent dipoles depend on the edge terminated atom, while the energy gap is independent of it, and (v) the presence of heptagon and pentagon defects in the GNFs results in the largest difference between the energy of the spin-up and spin-down electrons which is larger for the H-passivated GNFs as compared to F-passivated GNFs. Our study shows clearly the effect of geometry, size, termination, and bilayer on the electronic properties of small GNFs. This study reveals important features of graphene nano-flakes which can be detected using Raman spectroscopy.« less

Twisting dirac fermions: circular dichroism in bilayer graphene

NASA Astrophysics Data System (ADS)

Suárez Morell, E.; Chico, Leonor; Brey, Luis

2017-09-01

Twisted bilayer graphene is a chiral system which has been recently shown to present circular dichroism. In this work we show that the origin of this optical activity is the rotation of the Dirac fermions’ helicities in the top and bottom layer. Starting from the Kubo formula, we obtain a compact expression for the Hall conductivity that takes into account the dephasing of the electromagnetic field between the top and bottom layers and gathers all the symmetries of the system. Our results are based in both a continuum and a tight-binding model, and they can be generalized to any two-dimensional Dirac material with a chiral stacking between layers.

Suppression of Quasiparticle Scattering Signals in Bilayer Graphene Due to Layer Polarization and Destructive Interference

NASA Astrophysics Data System (ADS)

Jolie, Wouter; Lux, Jonathan; Pörtner, Mathias; Dombrowski, Daniela; Herbig, Charlotte; Knispel, Timo; Simon, Sabina; Michely, Thomas; Rosch, Achim; Busse, Carsten

2018-03-01

We study chemically gated bilayer graphene using scanning tunneling microscopy and spectroscopy complemented by tight-binding calculations. Gating is achieved by intercalating Cs between bilayer graphene and Ir(111), thereby shifting the conduction band minima below the chemical potential. Scattering between electronic states (both intraband and interband) is detected via quasiparticle interference. However, not all expected processes are visible in our experiment. We uncover two general effects causing this suppression: first, intercalation leads to an asymmetrical distribution of the states within the two layers, which significantly reduces the scanning tunneling spectroscopy signal of standing waves mainly present in the lower layer; second, forward scattering processes, connecting points on the constant energy contours with parallel velocities, do not produce pronounced standing waves due to destructive interference. We present a theory to describe the interference signal for a general n -band material.

Suppression of Quasiparticle Scattering Signals in Bilayer Graphene Due to Layer Polarization and Destructive Interference.

PubMed

Jolie, Wouter; Lux, Jonathan; Pörtner, Mathias; Dombrowski, Daniela; Herbig, Charlotte; Knispel, Timo; Simon, Sabina; Michely, Thomas; Rosch, Achim; Busse, Carsten

2018-03-09

We study chemically gated bilayer graphene using scanning tunneling microscopy and spectroscopy complemented by tight-binding calculations. Gating is achieved by intercalating Cs between bilayer graphene and Ir(111), thereby shifting the conduction band minima below the chemical potential. Scattering between electronic states (both intraband and interband) is detected via quasiparticle interference. However, not all expected processes are visible in our experiment. We uncover two general effects causing this suppression: first, intercalation leads to an asymmetrical distribution of the states within the two layers, which significantly reduces the scanning tunneling spectroscopy signal of standing waves mainly present in the lower layer; second, forward scattering processes, connecting points on the constant energy contours with parallel velocities, do not produce pronounced standing waves due to destructive interference. We present a theory to describe the interference signal for a general n-band material.

A first-principles study of the electrically tunable band gap in few-layer penta-graphene.

PubMed

Wang, Jinjin; Wang, Zhanyu; Zhang, R J; Zheng, Y X; Chen, L Y; Wang, S Y; Tsoo, Chia-Chin; Huang, Hung-Ji; Su, Wan-Sheng

2018-06-25

The structural and electronic properties of bilayer (AA- and AB-stacked) and tri-layer (AAA-, ABA- and AAB-stacked) penta-graphene (PG) have been investigated in the framework of density functional theory. The present results demonstrate that the ground state energy in AB stacking is lower than that in AA stacking, whereas ABA stacking is found to be the most energetically favorable, followed by AAB and AAA stackings. All considered model configurations are found to be semiconducting, independent of the stacking sequence. In the presence of a perpendicular electric field, their band gaps can be significantly reduced and completely closed at a specific critical electric field strength, demonstrating a Stark effect. These findings show that few-layer PG will have tremendous opportunities to be applied in nanoscale electronic and optoelectronic devices owing to its tunable band gap.

Electrostatic and magnetic fields in bilayer graphene

NASA Astrophysics Data System (ADS)

Jellal, Ahmed; Redouani, Ilham; Bahlouli, Hocine

2015-08-01

We compute the transmission probability through rectangular potential barriers and p-n junctions in the presence of a magnetic and electric fields in bilayer graphene taking into account contributions from the full four bands of the energy spectrum. For energy E higher than the interlayer coupling γ1 (E >γ1) two propagation modes are available for transport giving rise to four possible ways for transmission and reflection coefficients. However, when the energy is less than the height of the barrier the Dirac fermions exhibit transmission resonances and only one mode of propagation is available for transport. We study the effect of the interlayer electrostatic potential denoted by δ and variations of different barrier geometry parameters on the transmission probability.

Dirac points, spinons and spin liquid in twisted bilayer graphene

NASA Astrophysics Data System (ADS)

Irkhin, V. Yu.; Skryabin, Yu. N.

2018-05-01

Twisted bilayer graphene is an excellent example of highly correlated system demonstrating a nearly flat electron band, the Mott transition and probably a spin liquid state. Besides the one-electron picture, analysis of Dirac points is performed in terms of spinon Fermi surface in the limit of strong correlations. Application of gauge field theory to describe deconfined spin liquid phase is treated. Topological quantum transitions, including those from small to large Fermi surface in the presence of van Hove singularities, are discussed.

Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening.

PubMed

Ni, Zhen Hua; Yu, Ting; Lu, Yun Hao; Wang, Ying Ying; Feng, Yuan Ping; Shen, Ze Xiang

2008-11-25

Graphene was deposited on a transparent and flexible substrate, and tensile strain up to approximately 0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (-27.8 and -14.2 cm(-1) per 1% strain, respectively) because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposed that, by applying uniaxial strain on graphene, tunable band gap at K point can be realized. First-principle calculations predicted a band-gap opening of approximately 300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover, our results suggest that the flexible substrate is ready for such a strain process, and Raman spectroscopy can be used as an ultrasensitive method to determine the strain.

Helium isotope enrichment by resonant tunneling through nanoporous graphene bilayers.

PubMed

Mandrà, Salvatore; Schrier, Joshua; Ceotto, Michele

2014-08-21

Graphene is impermeable to gases, but introducing subnanometer pores can allow for selective gas separation. Because graphene is only one atom thick, tunneling can play an important role, especially for low-mass gases such as helium, and this has been proposed as a means of separating (3)He from (4)He. In this paper, we consider the possibility of utilizing resonant tunneling of helium isotopes through nanoporous graphene bilayers. Using a model potential fit to previously reported DFT potential energy surfaces, we calculate the thermal rate constant as a function of interlayer separation using a recently described time-independent method for arbitrary multibarrier potentials. Resonant transmission allows for the total flux rate of (3)He to remain the same as the best-known single-barrier pores but doubles the selectivity with respect to (4)He when the optimal interlayer spacing of 4.6 Å is used. The high flux rate and selectivity are robust against variations of the interlayer spacing and asymmetries in the potential that may occur in experiment.

Gate-controlled tunneling of quantum Hall edge states in bilayer graphene

NASA Astrophysics Data System (ADS)

Zhu, Jun; Li, Jing; Wen, Hua

Controlled tunneling of integer and fractional quantum Hall edge states provides a powerful tool to probe the physics of 1D systems and exotic particle statistics. Experiments in GaAs 2DEGs employ either a quantum point contact or a line junction tunnel barrier. It is generally difficult to independently control the filling factors νL and νR on the two sides of the barrier. Here we show that in bilayer graphene both νL and νR as well as their Landau level structures can be independently controlled using a dual-split-gate structure. In addition, the height of the line-junction tunnel barrier implemented in our experiments is tunable via a 5th gate. By measuring the tunneling resistance across the junction RT we examine the equilibration of the edge states in a variety of νL/νR scenarios and under different barrier heights. Edge states from both sides are fully mixed in the case of a low barrier. As the barrier height increases, we observe plateaus in RT that correspond to sequential complete backscattering of edge states. Gate-controlled manipulation of edge states offers a new angle to the exploration of quantum Hall magnetism and fractional quantum Hall effect in bilayer graphene.

Bonding between graphene and MoS 2 monolayers without and with Li intercalation

DOE PAGES

Ahmed, Towfiq; Modine, N. A.; Zhu, Jian-Xin

2015-07-27

We performed density functional theory (DFT) calculations for a bi-layered heterostructure combining a graphene layer with a MoS 2 layer with and without intercalated Li atoms. Our calculations demonstrate the importance of the van der Waals (vdW) interaction, which is crucial for forming stable bonding between the layers. Our DFT calculation correctly reproduces the linear dispersion, or Dirac cone, feature at the Fermi energy for the isolated graphene monolayer and the band gap for the MoS 2 monolayer. For the combined graphene/MoS 2 bi-layer, we observe interesting electronic structure and density of states (DOS) characteristics near the Fermi energy, showingmore » both the gap like features of the MoS 2 layer and in-gap states with linear dispersion contributed mostly by the graphene layer. Our calculated total DOS in this vdW heterostructure reveals that the graphene layer significantly contributes to pinning the Fermi energy at the center of the band gap of MoS 2. We also find that intercalating Li ions in between the layers of the graphene/MoS2 heterostructure enhances the binding energy through orbital hybridizations between cations (Li adatoms) and anions (graphene and MoS 2 monolayers). Moreover, we calculate the dielectric function of the Li intercalated graphene/MoS 2 heterostructure, the imaginary component of which can be directly compared with experimental measurements of optical conductivity in order to validate our theoretical prediction. We observe sharp features in the imaginary component of the dielectric function, which shows the presence of a Drude peak in the optical conductivity, and therefore metallicity in the lithiated graphene/MoS 2 heterostructure.« less

Phonon stiffen and soften at zigzag- and armchair-dominated edges of exfoliated bilayer graphene ribbon presented by Raman spectra

NASA Astrophysics Data System (ADS)

Xia, Minggang; Zhou, Xiaohua; Xin, Duqiang; Xu, Qiang

2018-01-01

The Raman spectra at the edge of the exfoliated bilayer graphene ribbon (GR) were investigated in detail. Results show that both G and 2D phonons stiffen (wave number increases) at zigzag-dominated edge, while they soften at armchair-dominated edge compared with those at the middle position in the GR. Furthermore, the full widths at half maximum intensity of both G and 2D Raman peaks narrow at the zigzag-dominated edge, while they broaden at the armchair-dominated edge. The stiffness and softness are attributed to the C-C bonds at the edge. For zigzag-dominated edge, the stiffness may originate in the increase of the force constant induced by the shrinking of C-C bond. For armchair-dominated edge, the softness may be due to the decrease of the force constant induced by the unsaturated hanging bonds at edge, which is different from Kohn anomaly and charge doping. The analysis is in agreement well with others calculation results about C-C bonds and the edge energy. These results may be useful to understand physical properties at the bilayer graphene edge and for applications in the device by taking advantage of the edge states in bilayer graphene.

Energy gap states and tunneling currents in semiconducting graphene

NASA Astrophysics Data System (ADS)

Szczesniak, Dominik; Hoehn, Ross; Kais, Sabre

It has been predicted that when graphene is supported on a substrate or doped with foreign atom species, the inherent linear electronic dispersion of its pristine form can be strongly altered. Worthy of special attention is the situation when the interactions between graphene and the substrate or dopants lead to an opening of the finite electronic gap in the fermionic spectrum of this nano-material, and strongly influence its transport and optical properties. Herein, the fundamental electronic transport properties of such perturbed graphene are discussed in the framework of the complex band structure analysis, which not only accounts for the propagating but also the evanescent electronic states. Various scenarios responsible for the band gap opening and manipulation of its characteristics are considered, these considerations may entirely account for the aforementioned perturbations to the pristine graphene. It is shown, that the these perturbations are responsible for inducing gap states which allow electrons to directly tunnel between the conduction and valence bands in perturbed graphene. The resulting tunneling states are analyzed in a comprehensive manner, suggesting their great importance for the transport processes across graphene-based semiconducting nanostructures.

Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Hyewon; Kim, Taekwang; Shin, Somyeong

We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS{sub 2} transistors. Ti-MoS{sub 2}-graphene heterojunction transistors using both single-layer MoS{sub 2} (1M) and 4-layer MoS{sub 2} (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS{sub 2}-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS{sub 2}-Ti, which resulted in V{sub DS} polarity dependence of device parameters such as threshold voltage (V{sub TH}) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhancedmore » device performance with higher on/off ratio and increased field-effect mobility (μ{sub FE}) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS{sub 2} thickness for both SG and BG contacts. Differential conductance (σ{sub d}) of 1M increases with V{sub DS} irrespective of V{sub DS} polarity, while σ{sub d} of 4M ceases monotonic growth at positive V{sub DS} values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σ{sub d} saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.« less

Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.

PubMed

Hunt, B M; Li, J I A; Zibrov, A A; Wang, L; Taniguchi, T; Watanabe, K; Hone, J; Dean, C R; Zaletel, M; Ashoori, R C; Young, A F

2017-10-16

The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers.The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.

Cyclotron resonance of the magnetic ratchet effect and second harmonic generation in bilayer graphene

NASA Astrophysics Data System (ADS)

Kheirabadi, Narjes; McCann, Edward; Fal'ko, Vladimir I.

2018-02-01

We model the magnetic ratchet effect in bilayer graphene in which a dc electric current is produced by an ac electric field of frequency ω in the presence of a steady in-plane magnetic field and inversion-symmetry breaking. In bilayer graphene, the ratchet effect is tunable by an external metallic gate which breaks inversion symmetry. For zero in-plane magnetic field, we show that trigonal warping and inversion-symmetry breaking are able to produce a large dc valley current, but not a nonzero total dc charge current. For the magnetic ratchet in a tilted magnetic field, the perpendicular field component induces cyclotron motion with frequency ωc and we find that the dc current displays cyclotron resonance at ωc=ω , although this peak in the current is actually smaller than its value at ωc=0 . Second harmonic generation, however, is greatly enhanced by resonances at ωc=ω and ωc=2 ω for which the current is generally much larger than at ωc=0 .

Bilayer graphene lattice-layer entanglement in the presence of non-Markovian phase noise

NASA Astrophysics Data System (ADS)

Bittencourt, Victor A. S. V.; Blasone, Massimo; Bernardini, Alex E.

2018-03-01

The evolution of single particle excitations of bilayer graphene under effects of non-Markovian noise is described with focus on the decoherence process of lattice-layer (LL) maximally entangled states. Once the noiseless dynamics of an arbitrary initial state is identified by the correspondence between the tight-binding Hamiltonian for the AB-stacked bilayer graphene and the Dirac equation—which includes pseudovectorlike and tensorlike field interactions—the noisy environment is described as random fluctuations on bias voltage and mass terms. The inclusion of noisy dynamics reproduces the Ornstein-Uhlenbeck processes: A non-Markovian noise model with a well-defined Markovian limit. Considering that an initial amount of entanglement shall be dissipated by the noise, two profiles of dissipation are identified. On one hand, for eigenstates of the noiseless Hamiltonian, deaths and revivals of entanglement are identified along the oscillation pattern for long interaction periods. On the other hand, for departing LL Werner and Cat states, the entanglement is suppressed although, for both cases, some identified memory effects compete with the pure noise-induced decoherence in order to preserve the the overall profile of a given initial state.

Topological Quantum Phase Transitions in Two-Dimensional Hexagonal Lattice Bilayers

NASA Astrophysics Data System (ADS)

Zhai, Xuechao; Jin, Guojun

2013-09-01

Since the successful fabrication of graphene, two-dimensional hexagonal lattice structures have become a research hotspot in condensed matter physics. In this short review, we theoretically focus on discussing the possible realization of a topological insulator (TI) phase in systems of graphene bilayer (GBL) and boron nitride bilayer (BNBL), whose band structures can be experimentally modulated by an interlayer bias voltage. Under the bias, a band gap can be opened in AB-stacked GBL but is still closed in AA-stacked GBL and significantly reduced in AA- or AB-stacked BNBL. In the presence of spin-orbit couplings (SOCs), further demonstrations indicate whether the topological quantum phase transition can be realized strongly depends on the stacking orders and symmetries of structures. It is observed that a bulk band gap can be first closed and then reopened when the Rashba SOC increases for gated AB-stacked GBL or when the intrinsic SOC increases for gated AA-stacked BNBL. This gives a distinct signal for a topological quantum phase transition, which is further characterized by a jump of the ℤ2 topological invariant. At fixed SOCs, the TI phase can be well switched by the interlayer bias and the phase boundaries are precisely determined. For AA-stacked GBL and AB-stacked BNBL, no strong TI phase exists, regardless of the strength of the intrinsic or Rashba SOCs. At last, a brief overview is given on other two-dimensional hexagonal materials including silicene and molybdenum disulfide bilayers.

Edge effects on band gap energy in bilayer 2H-MoS{sub 2} under uniaxial strain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Liang; Wang, Jin; Dongare, Avinash M., E-mail: dongare@uconn.edu

2015-06-28

The potential of ultrathin MoS{sub 2} nanostructures for applications in electronic and optoelectronic devices requires a fundamental understanding in their electronic structure as a function of strain. Previous experimental and theoretical studies assume that an identical strain and/or stress state is always maintained in the top and bottom layers of a bilayer MoS{sub 2} film. In this study, a bilayer MoS{sub 2} supercell is constructed differently from the prototypical unit cell in order to investigate the layer-dependent electronic band gap energy in a bilayer MoS{sub 2} film under uniaxial mechanical deformations. The supercell contains an MoS{sub 2} bottom layer andmore » a relatively narrower top layer (nanoribbon with free edges) as a simplified model to simulate the as-grown bilayer MoS{sub 2} flakes with free edges observed experimentally. Our results show that the two layers have different band gap energies under a tensile uniaxial strain, although they remain mutually interacting by van der Waals interactions. The deviation in their band gap energies grows from 0 to 0.42 eV as the uniaxial strain increases from 0% to 6% under both uniaxial strain and stress conditions. The deviation, however, disappears if a compressive uniaxial strain is applied. These results demonstrate that tensile uniaxial strains applied to bilayer MoS{sub 2} films can result in distinct band gap energies in the bilayer structures. Such variations need to be accounted for when analyzing strain effects on electronic properties of bilayer or multilayered 2D materials using experimental methods or in continuum models.« less

Graphene field effect transistor without an energy gap.

PubMed

Jang, Min Seok; Kim, Hyungjun; Son, Young-Woo; Atwater, Harry A; Goddard, William A

2013-05-28

Graphene is a room temperature ballistic electron conductor and also a very good thermal conductor. Thus, it has been regarded as an ideal material for postsilicon electronic applications. A major complication is that the relativistic massless electrons in pristine graphene exhibit unimpeded Klein tunneling penetration through gate potential barriers. Thus, previous efforts to realize a field effect transistor for logic applications have assumed that introduction of a band gap in graphene is a prerequisite. Unfortunately, extrinsic treatments designed to open a band gap seriously degrade device quality, yielding very low mobility and uncontrolled on/off current ratios. To solve this dilemma, we propose a gating mechanism that leads to a hundredfold enhancement in on/off transmittance ratio for normally incident electrons without any band gap engineering. Thus, our saw-shaped geometry gate potential (in place of the conventional bar-shaped geometry) leads to switching to an off state while retaining the ultrahigh electron mobility in the on state. In particular, we report that an on/off transmittance ratio of 130 is achievable for a sawtooth gate with a gate length of 80 nm. Our switching mechanism demonstrates that intrinsic graphene can be used in designing logic devices without serious alteration of the conventional field effect transistor architecture. This suggests a new variable for the optimization of the graphene-based device--geometry of the gate electrode.

Graphene-diamond interface: Gap opening and electronic spin injection

NASA Astrophysics Data System (ADS)

Ma, Yandong; Dai, Ying; Guo, Meng; Huang, Baibiao

2012-06-01

Creating a finite band gap, injecting electronic spin, and finding a suitable substrate are the three important challenges for building graphene-based devices. Here, first-principles calculations are performed to investigate the electronic and magnetic properties of graphene adsorbed on the (111) surface of diamond, which is synthesized experimentally [Nature10.1038/nature09979 472, 74 (2011); J. Appl. Phys.10.1063/1.3627370 110, 044324 (2011); Nano Lett.10.1021/nl204545q 12, 1603 (2012); ACS Nano10.1021/nn204362p 6, 1018 (2012)]. Our results reveal that the graphene adsorbed on the diamond surface is a semiconductor with a finite gap depending on the adsorption arrangements due to the variation of on-site energy induced by the diamond surface, with the extra advantage of maintaining main characters of the linear band dispersion of graphene. More interestingly, different from typical graphene/semiconductor hybrid systems, we find that electronic spin can arise ``intrinsically'' in graphene owing to the exchange proximity interaction between electrons in graphene and localized electrons in the diamond surface rather than the characteristic graphene states. These predications strongly revive this new synthesized system as a viable candidate to overcome all the aforementioned challenges, providing an ideal platform for future graphene-based electronics.

Highly Conductive and Transparent Large-Area Bilayer Graphene Realized by MoCl5 Intercalation.

PubMed

Kinoshita, Hiroki; Jeon, Il; Maruyama, Mina; Kawahara, Kenji; Terao, Yuri; Ding, Dong; Matsumoto, Rika; Matsuo, Yutaka; Okada, Susumu; Ago, Hiroki

2017-11-01

Bilayer graphene (BLG) comprises a 2D nanospace sandwiched by two parallel graphene sheets that can be used to intercalate molecules or ions for attaining novel functionalities. However, intercalation is mostly demonstrated with small, exfoliated graphene flakes. This study demonstrates intercalation of molybdenum chloride (MoCl 5 ) into a large-area, uniform BLG sheet, which is grown by chemical vapor deposition (CVD). This study reveals that the degree of MoCl 5 intercalation strongly depends on the stacking order of the graphene; twist-stacked graphene shows a much higher degree of intercalation than AB-stacked. Density functional theory calculations suggest that weak interlayer coupling in the twist-stacked graphene contributes to the effective intercalation. By selectively synthesizing twist-rich BLG films through control of the CVD conditions, low sheet resistance (83 Ω ▫ -1 ) is realized after MoCl 5 intercalation, while maintaining high optical transmittance (≈95%). The low sheet resistance state is relatively stable in air for more than three months. Furthermore, the intercalated BLG film is applied to organic solar cells, realizing a high power conversion efficiency. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental and theoretical investigation of relative optical band gaps in graphene generations

NASA Astrophysics Data System (ADS)

Bhatnagar, Deepika; Singh, Sukhbir; Yadav, Sriniwas; Kumar, Ashok; Kaur, Inderpreet

2017-01-01

Size and chemical functionalization dependant optical band gaps in graphene family nanomaterials were investigated by experimental and theoretical study using Tauc plot and density functional theory (DFT). We have synthesized graphene oxide through a modified Hummer’s method using graphene nanoplatelets and sequentially graphene quantum dots through hydrothermal reduction. The experimental results indicate that the optical band gap in graphene generations was altered by reducing the size of graphene sheets and attachment of chemical functionalities like epoxy, hydroxyl and carboxyl groups plays a crucial role in varying optical band gaps. It is further confirmed by DFT calculations that the π orbitals were more dominatingly participating in transitions shown by projected density of states and the molecular energy spectrum represented the effect of attached functional groups along with discreteness in energy levels. Theoretical results were found to be in good agreement with experimental results. All of the above different variants of graphene can be used in native or modified form for sensor design and optoelectronic applications.

Topological magnetic phase in LaMnO3 (111) bilayer

NASA Astrophysics Data System (ADS)

Weng, Yakui; Huang, Xin; Yao, Yugui; Dong, Shuai

2015-11-01

Candidates for correlated topological insulators, originated from the spin-orbit coupling as well as the Hubbard-type correlation, are expected in the (111) bilayer of perovskite-structural transition-metal oxides. Based on the first-principles calculation and tight-binding model, the electronic structure of a LaMnO3 (111) bilayer sandwiched in LaScO3 barriers has been investigated. For the ideal undistorted perovskite structure, the Fermi energy of LaMnO3 (111) bilayer just stays at the Dirac point, rendering a semimetal (graphenelike) which is also a half metal [different from graphene or the previously studied LaNiO3 (111) bilayer]. The Dirac cone can be opened by the spin-orbit coupling, giving rise to nontrivial topological bands corresponding to the (quantized) anomalous Hall effect. For the realistic orthorhombic distorted lattice, the Dirac point moves with increasing Hubbard repulsion (or equivalent Jahn-Teller distortion). Finally, a Mott gap opens, establishing a phase boundary between the Mott insulator and topological magnetic insulator. Our calculation finds that the gap opened by spin-orbit coupling is much smaller in the orthorhombic distorted lattice (˜1.7 meV) than the undistorted one (˜11 meV). Therefore, to suppress the lattice distortion can be helpful to enhance the robustness of the topological phase in perovskite (111) bilayers.

Lifshitz transition and thermoelectric properties of bilayer graphene

NASA Astrophysics Data System (ADS)

Suszalski, Dominik; Rut, Grzegorz; Rycerz, Adam

2018-03-01

This is a numerical study of thermoelectric properties of ballistic bilayer graphene in the presence of a trigonal warping term in the effective Hamiltonian. We find, in the mesoscopic samples of the length L >10 μ m at sub-Kelvin temperatures, that both the Seebeck coefficient and the Lorentz number show anomalies (the additional maximum and minimum, respectively) when the electrochemical potential is close to the Lifshitz energy, which can be attributed to the presence of the van Hove singularity in a bulk density of states. At higher temperatures the anomalies vanish, but measurable quantities characterizing the remaining maximum of the Seebeck coefficient still unveil the presence of massless Dirac fermions and make it possible to determine the trigonal warping strength. Behavior of the thermoelectric figure of merit (Z T ) is also discussed.

Direct graphene growth on MgO: origin of the band gap.

PubMed

Gaddam, Sneha; Bjelkevig, Cameron; Ge, Siping; Fukutani, Keisuke; Dowben, Peter A; Kelber, Jeffry A

2011-02-23

A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C(2)H(4) on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon film derived from annealing adventitious carbon on MgO(111), and for a 1.5 ML thick graphene film grown by sputter deposition on the 1 ML film. The LEED data indicate different electron densities at the A and B sites of the graphene lattice, suggesting that the observed band gap results from lifting the graphene HOMO/LUMO degeneracy at the Dirac point. The data also indicate that disparities in A site/B site LEED intensities decrease with increasing carbon overlayer thickness, suggesting that the graphene band gap size decreases with increasing number of graphene layers on MgO(111). © 2011 IOP Publishing Ltd

Nitrogen Doping Enables Covalent-Like π–π Bonding between Graphenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Yong-Hui; Huang, Jingsong; Sheng, Xiaolan

In neighboring layers of bilayer (and few-layer) graphenes, both AA and AB stacking motifs are known to be separated at a distance corresponding to van der Waals (vdW) interactions. In this Letter, we present for the first time a new aspect of graphene chemistry in terms of a special chemical bonding between the giant graphene "molecules". Through rigorous theoretical calculations, we demonstrate that the N-doped graphenes (NGPs) with various doping levels can form an unusual two-dimensional (2D) pi-pi bonding in bilayer NGPs bringing the neighboring NGPs to significantly reduced interlayer separations. The interlayer binding energies can be enhanced by upmore » to 50% compared to the pristine graphene bilayers that are characterized by only vdW interactions. Such an unusual chemical bonding arises from the pi-pi overlap across the vdW gap while the individual layers maintain their in-plane pi-conjugation and are accordingly planar. Moreover, the existence of the resulting interlayer covalent-like bonding is corroborated by electronic structure calculations and crystal orbital overlap population (COOP) analyses. In NGP-based graphite with the optimal doping level, the NGP layers are uniformly stacked and the 3D bulk exhibits metallic characteristics both in the in-plane and along the stacking directions.« less

Nitrogen Doping Enables Covalent-Like π–π Bonding between Graphenes

DOE PAGES

Tian, Yong-Hui; Huang, Jingsong; Sheng, Xiaolan; ...

2015-07-07

In neighboring layers of bilayer (and few-layer) graphenes, both AA and AB stacking motifs are known to be separated at a distance corresponding to van der Waals (vdW) interactions. In this Letter, we present for the first time a new aspect of graphene chemistry in terms of a special chemical bonding between the giant graphene "molecules". Through rigorous theoretical calculations, we demonstrate that the N-doped graphenes (NGPs) with various doping levels can form an unusual two-dimensional (2D) pi-pi bonding in bilayer NGPs bringing the neighboring NGPs to significantly reduced interlayer separations. The interlayer binding energies can be enhanced by upmore » to 50% compared to the pristine graphene bilayers that are characterized by only vdW interactions. Such an unusual chemical bonding arises from the pi-pi overlap across the vdW gap while the individual layers maintain their in-plane pi-conjugation and are accordingly planar. Moreover, the existence of the resulting interlayer covalent-like bonding is corroborated by electronic structure calculations and crystal orbital overlap population (COOP) analyses. In NGP-based graphite with the optimal doping level, the NGP layers are uniformly stacked and the 3D bulk exhibits metallic characteristics both in the in-plane and along the stacking directions.« less

Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors.

PubMed

Wang, Sheng-Wen; Medina, Henry; Hong, Kuo-Bin; Wu, Chun-Chia; Qu, Yindong; Manikandan, Arumugam; Su, Teng-Yu; Lee, Po-Tsung; Huang, Zhi-Quan; Wang, Zhiming; Chuang, Feng-Chuan; Kuo, Hao-Chung; Chueh, Yu-Lun

2017-09-26

Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS 2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS 2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS 2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS 2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.

Magnetic field effects on charge structure factors of gapped graphene structure

NASA Astrophysics Data System (ADS)

Rezania, Hamed; Tawoose, Nasrin

2018-02-01

We present the behaviors of dynamical and static charge susceptibilities of undoped gapped graphene using the Green's function approach in the context of tight binding model Hamiltonian. Specially, the effects of magnetic field on the plasmon modes of gapped graphene structure are investigated via calculating correlation function of charge density operators. Our results show the increase of magnetic field leads to disappear high frequency plasmon mode for gapped case. We also show that low frequency plasmon mode has not affected by increase of magnetic field and chemical potential. Finally the temperature dependence of static charge structure factor of gapp graphene structure is studied. The effects of both magnetic field and gap parameter on the static structure factor are discusses in details.

Twisted bilayer blue phosphorene: A direct band gap semiconductor

NASA Astrophysics Data System (ADS)

Ospina, D. A.; Duque, C. A.; Correa, J. D.; Suárez Morell, Eric

2016-09-01

We report that two rotated layers of blue phosphorene behave as a direct band gap semiconductor. The optical spectrum shows absorption peaks in the visible region of the spectrum and in addition the energy of these peaks can be tuned with the rotational angle. These findings makes twisted bilayer blue phosphorene a strong candidate as a solar cell or photodetection device. Our results are based on ab initio calculations of several rotated blue phosphorene layers.

Nitrogen-Doping Enables Covalent-Like pi-pi Bonding between Graphenes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Yong-Hui; Huang, Jingsong; Sumpter, Bobby G

The neighboring layers in bi-layer (and few-layer) graphenes of both AA and AB stacking motifs are known to be separated at a distance corresponding to van der Waals (vdW) interactions. In this Letter, we present for the first time a new aspect of graphene chemistry in terms of a special chemical bonding between the giant graphene molecules . Through rigorous theoretical calculations, we demonstrate that the N-doped graphenes (NGPs) with various doping levels can form an unusual two-dimensional (2D) pi pi bonding in bi-layer NGPs bringing the neighboring NGPs to significantly reduced interlayer separations. The interlayer binding energies can bemore » enhanced by up to 50% compared to the pristine graphene bi-layers that are characterized by only vdW interactions. Such an unusual chemical bonding arises from the pi pi overlap across the vdW gap while the individual layers maintain their in-plane pi-conjugation and are accordingly planar. The existence of the resulting interlayer covalent-like bonding is corroborated by electronic structure calculations and crystal orbital overlap population (COOP) analyses. In NGP-based graphite with the optimal doping level, the NGP layers are uniformly stacked and the 3D bulk exhibits metallic characteristics both in the in-plane and along the stacking directions.« less

Effect of solvents on optical band gap of silicon-doped graphene oxide

NASA Astrophysics Data System (ADS)

Tul Ain, Qura; Al-Modlej, Abeer; Alshammari, Abeer; Naeem Anjum, Muhammad

2018-03-01

The objective of this study was to determine the influence on the optical band gap when the same amount of silicon-doped graphene oxide was dissolved in three different solvents namely, distilled water, benzene, and dichloroethane. Ultraviolet-visible spectroscopy was used to analyse the optical properties of the solutions. Among all these solutions distilled water containing silicon-doped graphene oxide has the smallest optical band gap of 2.9 eV and is considered a semiconductor. Other solutions are not considered as semiconductors as they have optical band gaps greater than 4 eV. It was observed that there is an increase in the value of optical band gap of distilled water, benzene, and dichloroethane solutions indicating a rise in the insulating behaviour. In this experiment, graphene oxide was synthesised from graphite powder by modified Hummer’s method and was then doped with silicon. Synthesis and doping of graphene oxide were confirmed by various characterization techniques. Fourier transmission infrared spectroscopy was used for identification of surface functional groups. X-ray diffraction was carried out to confirm the formation of crystalline graphene oxide and silicon doped graphene oxide. In x-ray diffraction pattern, shifting of intensity peak from a 2θ value of 26.5° to 10° confirmed the synthesis of graphene oxide and various intensity peaks at different values of 2θ confirmed doping of graphene oxide with silicon. Scanning electron microscopy images indicated that graphene oxide sheets were decorated with spherical silicon nanoparticles. Energy dispersive x-ray spectroscopy showed that silicon doped graphene oxide powder contained 63.36% carbon, 34.05% oxygen, and 2.6% silicon.

Ordered and layered structure of liquid nitromethane within a graphene bilayer: toward stabilization of energetic materials through nanoscale confinement.

PubMed

Liu, Yingzhe; Yu, Tao; Lai, Weipeng; Kang, Ying; Ge, Zhongxue

2015-03-01

The structural characteristics involving thermal stabilities of liquid nitromethane (NM)—one of the simplest energetic materials—confined within a graphene (GRA) bilayer were investigated by means of all-atom molecular dynamics simulations and density functional theory calculations. The results show that ordered and layered structures are formed at the confinement of the GRA bilayer induced by the van der Waals attractions of NM with GRA and the dipole-dipole interactions of NM, which is strongly dependent on the confinement size, i.e., the GRA bilayer distance. These unique intermolecular arrangements and preferred orientations of confined NM lead to higher stabilities than bulk NM revealed by bond dissociation energy calculations.

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

NASA Astrophysics Data System (ADS)

Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

2015-12-01

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.

PubMed

Zhang, S J; Lin, S S; Li, X Q; Liu, X Y; Wu, H A; Xu, W L; Wang, P; Wu, Z Q; Zhong, H K; Xu, Z J

2016-01-07

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.

Van Hove singularities and excitonic effects in the optical conductivity of twisted bilayer graphene.

PubMed

Havener, Robin W; Liang, Yufeng; Brown, Lola; Yang, Li; Park, Jiwoong

2014-06-11

We report a systematic study of the optical conductivity of twisted bilayer graphene (tBLG) across a large energy range (1.2-5.6 eV) for various twist angles, combined with first-principles calculations. At previously unexplored high energies, our data show signatures of multiple van Hove singularities (vHSs) in the tBLG bands as well as the nonlinearity of the single layer graphene bands and their electron-hole asymmetry. Our data also suggest that excitonic effects play a vital role in the optical spectra of tBLG. Including electron-hole interactions in first-principles calculations is essential to reproduce the shape of the conductivity spectra, and we find evidence of coherent interactions between the states associated with the multiple vHSs in tBLG.

Band gap modulation of graphene by metal substrate: A first principles study

NASA Astrophysics Data System (ADS)

Sahoo, Mihir Ranjan; Sahu, Sivabrata; Kushwaha, Anoop Kumar; Nayak, S. K.

2018-04-01

Due to high in-plane charge carrier mobility with high electron velocity and long spin diffusion length, graphene guarantees as a completely unique material for devices with various applications. Unaffected 2pz orbitals of carbon atoms in graphene can be highly influenced by substrates and leads to tuning in electronic properties. We report here a density functional calculation of graphene monolayer based on metallic substrate like nickel surfaces. Band-gap of graphene near K points opens due to interactions between 2pz and d-orbitals of nickel atoms and the gap modulation can be done with the increasing number of layers of substrates.

Generation of valley-polarized electron beam in bilayer graphene

NASA Astrophysics Data System (ADS)

Park, Changsoo

2015-12-01

We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents.

Topological approach to quantum Hall effects and its important applications: higher Landau levels, graphene and its bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Łydżba, Patrycja; Jacak, Lucjan

2017-05-01

In this paper the topological approach to quantum Hall effects is carefully described. Commensurability conditions together with proposed generators of a system braid group are employed to establish the fractional quantum Hall effect hierarchies of conventional semiconductors, monolayer and bilayer graphene structures. Obtained filling factors are compared with experimental data and a very good agreement is achieved. Preliminary constructions of ground-state wave functions in the lowest Landau level are put forward. Furthermore, this work explains why pyramids of fillings from higher bands are not counterparts of the well-known composite-fermion hierarchy - it provides with the cause for an intriguing robustness of ν = 7/3 , 8/3 and 5/2 states (also in graphene). The argumentation why paired states can be developed in two-subband systems (wide quantum wells) only when the Fermi energy lies in the first Landau level is specified. Finally, the paper also clarifies how an additional surface in bilayer systems contributes to an observation of the fractional quantum Hall effect near half-filling, ν = 1/2 .

Graphene Oxide Monolayer as a Compatibilizer at the Polymer-Polymer Interface for Stabilizing Polymer Bilayer Films against Dewetting.

PubMed

Kim, Tae-Ho; Kim, Hyeri; Choi, Ki-In; Yoo, Jeseung; Seo, Young-Soo; Lee, Jeong-Soo; Koo, Jaseung

2016-12-06

We investigate the effect of adding graphene oxide (GO) sheets at the polymer-polymer interface on the dewetting dynamics and compatibility of immiscible polymer bilayer films. GO monolayers are deposited at the poly(methyl methacrylate) (PMMA)-polystyrene (PS) interface by the Langmuir-Schaefer technique. GO monolayers are found to significantly inhibit the dewetting behavior of both PMMA films (on PS substrates) and PS films (on PMMA substrates). This can be interpreted in terms of an interfacial interaction between the GO sheets and these polymers, which is evidenced by the reduced contact angle of the dewet droplets. The favorable interaction of GO with both PS and PMMA facilitates compatibilization of the immiscible polymer bilayer films, thereby stabilizing their bilayer films against dewetting. This compatibilization effect is verified by neutron reflectivity measurements, which reveal that the addition of GO monolayers broadens the interface between PS and the deuterated PMMA films by 2.2 times over that of the bilayer in the absence of GO.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Influence of carrier density on the electronic cooling channels of bilayer graphene

NASA Astrophysics Data System (ADS)

Limmer, T.; Houtepen, A. J.; Niggebaum, A.; Tautz, R.; Da Como, E.

2011-09-01

We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25-1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons and holes. Two regimes of carrier cooling, dominated by optical and acoustic phonons emission, are clearly identified. For increasing carrier density, the crossover between the two regimes occurs at larger carrier temperatures, since cooling via optical phonons experiences a bottleneck. Acoustic phonons, which are less sensitive to saturation, show an increasing contribution at high density.

Magnetoelectric effect in bilayer graphene controlled by valley-isospin density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zülicke, U.; Winkler, R.

2014-09-01

We show that bilayer graphene (BLG) exhibits magnetoelectric (ME) effects that are formally similar to those commonly seen in band insulators with broken inversion and time-reversal symmetries. Three unusual features characterize the ME responses exhibited by BLG: (i) unlike most other ME media, BLG is a conductor, (ii) BLG has a nonquantized ME coupling even though its electronic structure does not break parity and time-reversal symmetry, and (iii) the magnitude of the ME coupling in BLG is determined by the valley-isospin density, which can be manipulated experimentally. This last property also enables a purely electric measurement of valley-isospin densities. Whilemore » our theoretical arguments use BLG as an example, they are generally valid for any material with similar symmetries« less

Machine Learning Prediction of the Energy Gap of Graphene Nanoflakes Using Topological Autocorrelation Vectors.

PubMed

Fernandez, Michael; Abreu, Jose I; Shi, Hongqing; Barnard, Amanda S

2016-11-14

The possibility of band gap engineering in graphene opens countless new opportunities for application in nanoelectronics. In this work, the energy gaps of 622 computationally optimized graphene nanoflakes were mapped to topological autocorrelation vectors using machine learning techniques. Machine learning modeling revealed that the most relevant correlations appear at topological distances in the range of 1 to 42 with prediction accuracy higher than 80%. The data-driven model can statistically discriminate between graphene nanoflakes with different energy gaps on the basis of their molecular topology.

Monolayer Boron Nitride Substrate Interactions with Graphene Under In-Plane and Perpendicular Strains: A First-Principles Study

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2018-04-01

Effects of strain on the electronic and optical properties of graphene on monolayer boron nitride (BN) substrate are investigated using first-principle calculations based on density functional theory. Strain-free graphene/BN has a small band gap of 97 meV at the K point. The magnitude of band gap increases with in-plane biaxial strain while it decreases with the perpendicular uniaxial strain. The ɛ2 (ω ) spectrum of graphene/BN bilayer for parallel polarization shows red and blue shifts by applying the in-plane tensile and compressive strains, respectively. Also the positions of peaks in the ɛ2 (ω ) spectrum are not significantly changed under perpendicular strain. The calculated results indicate that graphene on the BN substrate has great potential in microelectronic and optoelectronic applications.

Bi-layer graphene structure with non-equivalent planes: Magnetic properties study

NASA Astrophysics Data System (ADS)

Mhirech, A.; Aouini, S.; Alaoui-Ismaili, A.; Bahmad, L.

2018-05-01

In this paper, we study the magnetic properties of a ferromagnetic bi-layer graphene structure with non-equivalent planes. The geometry of the studied system is formed by two layers (A) and (B) consisting of the spins σ = 1 / 2 and S = 1 . For this purpose, the influence of the coupling exchange interactions, the external magnetic and the crystal fields are investigated and presented as well as the ground state phase diagrams. The Monte Carlo simulations have been used to examine the behavior of the partial and the total magnetizations as a function of the system parameters. These effects on the compensation and critical temperatures behavior are also presented in different phase diagrams, for the studied system.

Influence of the chemical potential on the Casimir-Polder interaction between an atom and gapped graphene or a graphene-coated substrate

NASA Astrophysics Data System (ADS)

Henkel, C.; Klimchitskaya, G. L.; Mostepanenko, V. M.

2018-03-01

We present a formalism based on first principles of quantum electrodynamics at nonzero temperature which permits us to calculate the Casimir-Polder interaction between an atom and a graphene sheet with arbitrary mass gap and chemical potential, including graphene-coated substrates. The free energy and force of the Casimir-Polder interaction are expressed via the polarization tensor of graphene in (2 +1 ) -dimensional space-time in the framework of the Dirac model. The obtained expressions are used to investigate the influence of the chemical potential of graphene on the Casimir-Polder interaction. Computations are performed for an atom of metastable helium interacting with either a freestanding graphene sheet or a graphene-coated substrate made of amorphous silica. It is shown that the impacts of the nonzero chemical potential and the mass gap on the Casimir-Polder interaction are in opposite directions, by increasing and decreasing the magnitudes of the free energy and force, respectively. It turns out, however, that the temperature-dependent part of the Casimir-Polder interaction is decreased by a nonzero chemical potential, whereas the mass gap increases it compared to the case of undoped, gapless graphene. The physical explanation for these effects is provided. Numerical computations of the Casimir-Polder interaction are performed at various temperatures and atom-graphene separations.

Bandgap and pseudohelicity effects over conductance in gapped graphene junctures

NASA Astrophysics Data System (ADS)

Navarro-Giraldo, J. A.; Quimbay, C. J.

2018-07-01

We study the conductance in gapped single-layer graphene junctures as a function of bangap, pseudohelicity and charge carriers density. To do it, we first calculate the transmission coefficients of massive charge carries for p–n and n–p–n junctures of gapped single-layer graphene. Next, we calculate the conductance for these two systems using the Landauer formula. Only for the p–n juncture case and non-zero bandgap values, we find the existence of a contribution to the conductance from pseudohelicity inversion states, which is small compared to the contribution from pseudohelicity conservation states. Also, we find for both type of junctures that there exists a window of charge carriers densities values where the conductance is zero (conductance gap), in such a way that the size of this window depends on the squared of the bandgap. We observe that the existence of a bandgap in the system leads to valley mixing and this fact could be useful for the future design of devices based on single-layer graphene.

Electron-hole collision limited transport in charge-neutral bilayer graphene

NASA Astrophysics Data System (ADS)

Nam, Youngwoo; Ki, Dong-Keun; Soler-Delgado, David; Morpurgo, Alberto F.

2017-12-01

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Nonlinear properties of gated graphene in a strong electromagnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avetisyan, A. A., E-mail: artakav@ysu.am; Djotyan, A. P., E-mail: adjotyan@ysu.am; Moulopoulos, K., E-mail: cos@ucy.ac.cy

We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an intense laser field. We show that adiabatically changing the gate potentials with time may produce (at resonant photon energy) a full inversion of the electron population with high density between valence and conduction bands. In the linear regime, excitonic absorption of an electromagnetic radiation in a graphene monolayer with opened energy gap is also studied.

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature.

PubMed

Kou, Liangzhi; Yan, Binghai; Hu, Feiming; Wu, Shu-Chun; Wehling, Tim O; Felser, Claudia; Chen, Changfeng; Frauenheim, Thomas

2013-01-01

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as the quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30-50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates the feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

New insights into the opening band gap of graphene oxides

NASA Astrophysics Data System (ADS)

Tran, Ngoc Thanh Thuy; Lin, Shih-Yang; Lin, Ming-Fa

Electronic properties of oxygen absorbed few-layer graphenes are investigated using first-principle calculations. They are very sensitive to the changes in the oxygen concentration, number of graphene layer, and stacking configuration. The feature-rich band structures exhibit the destruction or distortion of the Dirac cone, opening of band gap, anisotropic energy dispersions, O- and (C,O)-dominated energy dispersions, and extra critical points. The band decomposed charge distributions reveal the π-bonding dominated energy gap. The orbital-projected density of states (DOS) have many special structures mainly coming from a composite energy band, the parabolic and partially flat ones. The DOS and spatial charge distributions clearly indicate the critical orbital hybridizations in O-O, C-O and C-C bonds, being responsible for the diversified properties. All of the few-layer graphene oxides are semi-metals except for the semiconducting monolayer ones.

Nonlinear optical effects of opening a gap in graphene

NASA Astrophysics Data System (ADS)

Carvalho, David N.; Biancalana, Fabio; Marini, Andrea

2018-05-01

Graphene possesses remarkable electronic, optical, and mechanical properties that have taken the research of two-dimensional relativistic condensed matter systems to prolific levels. However, the understanding of how its nonlinear optical properties are affected by relativisticlike effects has been broadly uncharted. It has been recently shown that highly nontrivial currents can be generated in free-standing samples, notably leading to the generation of even harmonics. Since graphene monolayers are centrosymmetric media, for which such harmonic generation at normal incidence is deemed inaccessible, this light-driven phenomenon is both startling and promising. More realistically, graphene samples are often deposited on a dielectric substrate, leading to additional intricate interactions. Here, we present a treatment to study this instance by gapping the spectrum and we show this leads to the appearance of a Berry phase in the carrier dynamics. We analyze the role of such a phase in the generated nonlinear current and conclude that it suppresses odd-harmonic generation. The pump energy can be tuned to the energy gap to yield interference among odd harmonics mediated by interband transitions, allowing even harmonics to be generated. Our results and general methodology pave the way for understanding the role of gap opening in the nonlinear optics of two-dimensional lattices.

Dynamical Energy Gap Engineering in Graphene via Oscillating Out-of-Plane Deformations

NASA Astrophysics Data System (ADS)

Sandler, Nancy; Zhai, Dawei

The close relation between electronic properties and mechanical deformations in graphene has been the topic of active research in recent years. Interestingly, the effect of deformations on electronic properties can be understood in terms of pseudo-magnetic fields, whose spatial distribution and intensity are controllable via the deformation geometry. Previous results showed that electromagnetic fields (light) have the potential to induce dynamical gaps in graphene's energy bands, transforming graphene from a semimetal to a semiconductor. However, laser frequencies required to achieve these regimes are in the THz regime, which imposes challenges for practical purposes. In this talk we report a novel method to create dynamical gaps using oscillating mechanical deformations, i.e., via time-dependent pseudo-magnetic fields. Using the Floquet formalism we show the existence of a dynamical gap in the band structure at energies set by the frequency of the oscillation, and with a magnitude tuned by the geometry of the deformation. This dynamical-mechanical manipulation strategy appears as a promising venue to engineer electronic properties of suspended graphene devices. Work supported by NSF-DMR 1508325.

A theoretical study of symmetry-breaking organic overlayers on single- and bi-layer graphene

NASA Astrophysics Data System (ADS)

Morales-Cifuentes, Josue; Einstein, T. L.

2013-03-01

An ``overlayer'' of molecules that breaks the AB symmetry of graphene can produce (modify) a band gap in single- (bi-) layer graphene.[2] Since the triangular shaped trimesic acid (TMA) molecule forms two familiar symmetry breaking configurations, we are motivated to model TMA physisorption on graphene surfaces in conjunction with experiments by Groce et al. at UMD. Using VASP, with ab initio van der Waals density functionals (vdW-DF), we simulate adsorption of TMA onto a graphene surface in several symmetry-breaking arrangements in order to predict/understand the effect of TMA adsorption on experimental observables. Supported by NSF-MRSEC Grant DMR 05-20471.

Photoresponse of a Bilayer Graphene p-n Junction Using a Combination of Electrostatic and Electrolytic Gating

NASA Astrophysics Data System (ADS)

Grover, Sameer; Joshi, Anupama; Tulapurkar, Ashwin; Deshmukh, Mandar

Electrolyic gating can induce large carrier densities in graphene and other 2D-materials. We demonstrate a technique for the formation of p-n junctions in graphene using a combination of electrostatic and electrolytic gating. This was done by patterning the negative resist hydrogen silsesquioxane (HSQ) to cover part of a bilayer graphene flake. We performed electrical and photoresponse measurements with the ionic liquid EMI-Im as the top gate and with a silicon back gate. The device characteristics were measured both at room temperature, where the ions are mobile, and at low temperatures, where the ionic liquid is frozen. We created p-n junctions that work at both room temperature and at low temperatures below the freezing point of the ionic liquid. This technique is suited for studying the photoresponse of graphene p-n junctions because of the larger transparency of ionic liquids compared to metallic gates as used in previous studies. We found that the photoresponse is dominated by the photo-thermoelectric effect, characterized by a six fold pattern in the photovoltage. The photovoltage increases as the temperature decreases which is indicative of hot electron thermalization by disorder assisted supercollisions. DST, DAE, Government of India.

Layer-dependent band alignment of few layers of blue phosphorus and their van der Waals heterostructures with graphene

NASA Astrophysics Data System (ADS)

Pontes, Renato B.; Miwa, Roberto H.; da Silva, Antônio J. R.; Fazzio, Adalberto; Padilha, José E.

2018-06-01

The structural and electronic properties of few layers of blue phosphorus and their van der Waals heterostructures with graphene were investigated by means of first-principles electronic structure calculations. We study the four energetically most stable stacking configurations for multilayers of blue phosphorus. For all of them, the indirect band-gap semiconductor character, are preserved. We show that the properties of monolayer graphene and single-layer (bilayer) blue phosphorus are preserved in the van der Waals heterostructures. Further, our results reveal that under a perpendicular applied electric field, the position of the band structure of blue phosphorus with respect to that of graphene is tunable, enabling the effective control of the Schottky barrier height. Indeed, for the bilayer blue phosphorene on top of graphene, it is possible to even move the system into an Ohmic contact and induce a doping level of the blue phosphorene. All of these features are fundamental for the design of new nanodevices based on van der Waals heterostructures.

Graphene-induced band gap renormalization in polythiophene: a many-body perturbation study

NASA Astrophysics Data System (ADS)

Marsusi, F.; Fedorov, I. A.; Gerivani, S.

2018-01-01

Density functional theory and many-body perturbation theory at the G0W0 level are employed to study the electronic properties of polythiophene (PT) adsorbed on the graphene surface. Analysis of the charge density difference shows that substrate-adsorbate interaction leads to a strong physisorption and interfacial electric dipole moment formation. The electrostatic potential displays a  -0.19 eV shift in the graphene work function from its initial value of 4.53 eV, as the result of the interaction. The LDA band gap of the polymer does not show any change. However, the band structure exhibits weak orbital hybridizations resulting from slight overlapping between the polymer and graphene states wave functions. The interfacial polarization effects on the band gap and levels alignment are investigated at the G0W0 level and show a notable reduction of PT band gap compared to that of the isolated chain.

ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

NASA Astrophysics Data System (ADS)

Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

2016-03-01

ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

Indentation of Graphene-Covered Atomic Force Microscopy Probe Across a Lipid Bilayer Membrane: Effect of Tip Shape, Size, and Surface Hydrophobicity.

PubMed

Lv, Kang; Li, Yinfeng

2018-06-21

Understanding the interaction of graphene with cell membranes is crucial to the development of graphene-based biological applications and the management of graphene safety issues. To help reveal the key factors controlling the interaction between graphene and cell membranes, here we adopt the dissipative particle dynamics method to analyze the evolution of interaction force and free energy as the graphene-covered atomic force microscopy (AFM) probe indents across a lipid bilayer. The simulation results show that the graphene-covered AFM probe can cause severe deformation of the cell membrane which drives the lipid molecule to adsorb and diffuse at the surface of graphene. The breakthrough force and free energy are calculated to study the effects of the tip shape, size, and surface hydrophobicity on the piercing behaviors of graphene-covered AFM. In addition, the deformation of cell membrane can decrease the dependency of the breakthrough force on the tip shape. The analysis of surface functionalization suggests that the horizontal patterns on graphene can change the preferred orientation in the penetration process, but the vertical patterns on graphene may disrupt the cell membrane. What's more, the bending stiffness of graphene has little influence on the penetration process as graphene pierces into the cell membrane. These results provide useful guidelines for the molecular design of graphene materials with controllable cell penetrability.

Tuning ultrafast electron injection dynamics at organic-graphene/metal interfaces.

PubMed

Ravikumar, Abhilash; Kladnik, Gregor; Müller, Moritz; Cossaro, Albano; Bavdek, Gregor; Patera, Laerte L; Sánchez-Portal, Daniel; Venkataraman, Latha; Morgante, Alberto; Brivio, Gian Paolo; Cvetko, Dean; Fratesi, Guido

2018-05-03

We compare the ultrafast charge transfer dynamics of molecules on epitaxial graphene and bilayer graphene grown on Ni(111) interfaces through first principles calculations and X-ray resonant photoemission spectroscopy. We use 4,4'-bipyridine as a prototypical molecule for these explorations as the energy level alignment of core-excited molecular orbitals allows ultrafast injection of electrons from a substrate to a molecule on a femtosecond timescale. We show that the ultrafast injection of electrons from the substrate to the molecule is ∼4 times slower on weakly coupled bilayer graphene than on epitaxial graphene. Through our experiments and calculations, we can attribute this to a difference in the density of states close to the Fermi level between graphene and bilayer graphene. We therefore show how graphene coupling with the substrate influences charge transfer dynamics between organic molecules and graphene interfaces.

Organic doping of rotated double layer graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, Lijin; Jaiswal, Manu, E-mail: manu.jaiswal@iitm.ac.in

2016-05-06

Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity \\ mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with differentmore » rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.« less

Energy gap in graphene nanoribbons with structured external electric potentials

NASA Astrophysics Data System (ADS)

Apel, W.; Pal, G.; Schweitzer, L.

2011-03-01

The electronic properties of graphene zigzag nanoribbons with electrostatic potentials along the edges are investigated. Using the Dirac-fermion approach, we calculate the energy spectrum of an infinitely long nanoribbon of finite width w, terminated by Dirichlet boundary conditions in the transverse direction. We show that a structured external potential that acts within the edge regions of the ribbon can induce a spectral gap and thus switch the nanoribbon from metallic to insulating behavior. The basic mechanism of this effect is the selective influence of the external potentials on the spinorial wave functions that are topological in nature and localized along the boundary of the graphene nanoribbon. Within this single-particle description, the maximal obtainable energy gap is Emax∝πℏvF/w, i.e., ≈0.12 eV for w=15 nm. The stability of the spectral gap against edge disorder and the effect of disorder on the two-terminal conductance is studied numerically within a tight-binding lattice model. We find that the energy gap persists as long as the applied external effective potential is larger than ≃0.55×W, where W is a measure of the disorder strength. We argue that there is a transport gap due to localization effects even in the absence of a spectral gap.

Modification of thermal and electronic properties of bilayer graphene by using slow Na+ ions

NASA Astrophysics Data System (ADS)

Ryu, Mintae; Lee, Paengro; Kim, Jingul; Park, Heemin; Chung, Jinwook

2016-12-01

Bilayer graphene (BLG) has an extensive list of industrial applications in graphene-based nanodevices such as energy storage devices, flexible displays, and thermoelectric devices. By doping slow Na+ ions on Li-intercalated BLG, we find significantly improved thermal and electronic properties of BLG by using angle-resolved photoemission and high-resolution core level spectroscopy (HRCLS) with synchrotron photons. Our HRCLS data reveal that the adsorbed Na+ ions on a BLG produced by Li-intercalation through single layer graphene (SLG) spontaneously intercalate below the BLG, and substitute Li atoms to form Na-Si bonds at the SiC interface while preserving the same phase of BLG. This is in sharp contrast with no intercalation of Na+ ions on SLG though neutral Na atoms intercalate. The Na+-induced BLG is found to be stable upon heating up to T = 400 °C, but returns to SLG when heated at T d = 500 °C. The evolution of the π-bands upon doping the Na+ ions followed by thermal annealing shows that the carrier concentration of the π-band may be artificially controlled without damaging the Dirac nature of the π-electrons. The doubled desorption temperature from that (T d = 250 °C) of the Na-intercalated SLG together with the electronic stability of the Na+-intercalated BLG may find more practical and effective applications in advancing graphene-based thermoelectric devices and anode materials for rechargeable batteries.

Diastase induced green synthesis of bilayered reduced graphene oxide and its decoration with gold nanoparticles.

PubMed

Maddinedi, Sireesh Babu; Mandal, Badal Kumar; Patil, Sagar Hindurao; Andhalkar, Vaibhav Vilas; Ranjan, Shivendu; Dasgupta, Nandita

2017-01-01

In this paper, we report an enzyme dependent, green one-pot deoxygenation cum decoration method to synthesize diastase-conjugated reduced graphene oxide (DRG) nanosheets, DRG/gold nanoparticles (DRG/Au) composite. The DRG synthesis was completed in 7h under heating at 90°C on water bath. Selected area electron diffraction (SAED) and Atomic force microscopy (AFM) study has revealed the formation of bilayered reduced graphene oxide sheets. Transmission electron microscopy (TEM) images of DRG/Au composite have shown the uniform decoration of gold nanoparticles (AuNPs) onto the DRG nanosheet surface. Fourier transform infrared spectroscopy (FTIR) and Raman results additionally have shown the functionalization of enzyme molecules onto the DRG nanosheet surface after reduction making it as an effective platform towards the efficient binding of gold nanoparticles. In vitro cytotoxicity studies by MTT assay on A549 and HCT116 cell lines exhibited that the cytotoxicity of the prepared graphene oxide (GO), DRG and DRG/Au is dose dependant. These results have shown that this synthetic method is effective for the production of large scale graphene in a low cost, simple and green method. Since this process avoids the use of hazardous and toxic substances, the produced DRG/Au composites are likely to offer various potential applications in biology and medicine. Copyright © 2016 Elsevier B.V. All rights reserved.

Quasiparticle Energies and Band Gaps in Graphene Nanoribbons

NASA Astrophysics Data System (ADS)

Yang, Li; Park, Cheol-Hwan; Son, Young-Woo; Cohen, Marvin L.; Louie, Steven G.

2007-11-01

We present calculations of the quasiparticle energies and band gaps of graphene nanoribbons (GNRs) carried out using a first-principles many-electron Green’s function approach within the GW approximation. Because of the quasi-one-dimensional nature of a GNR, electron-electron interaction effects due to the enhanced screened Coulomb interaction and confinement geometry greatly influence the quasiparticle band gap. Compared with previous tight-binding and density functional theory studies, our calculated quasiparticle band gaps show significant self-energy corrections for both armchair and zigzag GNRs, in the range of 0.5 3.0 eV for ribbons of width 2.4 0.4 nm. The quasiparticle band gaps found here suggest that use of GNRs for electronic device components in ambient conditions may be viable.

Spin asymmetric band gap opening in graphene by Fe adsorption

NASA Astrophysics Data System (ADS)

del Castillo, E.; Cargnoni, F.; Achilli, S.; Tantardini, G. F.; Trioni, M. I.

2015-04-01

The adsorption of Fe atom on graphene is studied by first-principles Density Functional Theory. The structural, electronic, and magnetic properties are analyzed at different coverages, all preserving C6v symmetry for the Fe adatom. We observed that binding energies, magnetic moments, and adsorption distances rapidly converge as the size of the supercell increases. Among the considered supercells, those constituted by 3n graphene unit cells show a very peculiar behavior: the adsorption of a Fe atom induces the opening of a spin-dependent gap in the band structure. In particular, the gap amounts to tenths of eV in the majority spin component, while in the minority one it has a width of about 1 eV for the 3 × 3 supercell and remains significant even at very low coverages (0.25 eV for θ ≃ 2%). The charge redistribution upon Fe adsorption has also been analyzed according to state of the art formalisms indicating an appreciable charge transfer from Fe to the graphene layer.

Elastic effects on vibration of bilayer graphene sheets incorporating integrated VdWs interactions

NASA Astrophysics Data System (ADS)

Kamali, Kamran; Nazemnezhad, Reza; Zare, Mojtaba

2018-03-01

The following study addresses the free vibration analysis of a bilayer graphene sheet (BLGS) embedded in an elastic medium in the presence of shear and tensile-compressive effects of van der Waals (vdWs) interactions. To ascertain the contribution of each force, the effects are considered separately and simultaneously. To model the geometry of the BLGS, the sandwich plate theory and the Hamilton’s principle are considered to derive the governing equations of motion. The Harmonic differential quadrature method is applied to solve the coupled equations and obtain the natural frequencies and related mode shapes. The results reveal that the contribution of tensile-compressive modulus of elastic medium is the most in changing the frequency of BLGSs.

The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

PubMed

Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

2011-05-24

Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments.

A grand canonical Monte Carlo study of SO2 capture using functionalized bilayer graphene nanoribbons.

PubMed

Maurya, Manish; Singh, Jayant K

2017-01-28

Grand canonical Monte Carlo (GCMC) simulation is used to study the adsorption of pure SO 2 using a functionalized bilayer graphene nanoribbon (GNR) at 303 K. The functional groups considered in this work are OH, COOH, NH 2 , NO 2 , and CH 3 . The mole percent of functionalization considered in this work is in the range of 3.125%-6.25%. GCMC simulation is further used to study the selective adsorption of SO 2 from binary and ternary mixtures of SO 2 , CO 2 , and N 2 , of variable composition using the functionalized bilayer graphene nanoribbon at 303 K. This study shows that the adsorption and selectivity of SO 2 increase after the functionalization of the nanoribbon compared to the hydrogen terminated nanoribbon. The order of adsorption capacity and selectivity of the functionalized nanoribbon is found to follow the order COOH > NO 2 > NH 2 > CH 3 > OH > H. The selectivity of SO 2 is found to be maximum at a pressure less than 0.2 bar. Furthermore, SO 2 selectivity and adsorption capacity decrease with increase in the molar ratio of SO 2 /N 2 mixture from 1:1 to 1:9. In the case of ternary mixture of SO 2 , CO 2 , N 2 , having compositions of 0.05, 0.15, 0.8, the selectivity of SO 2 over N 2 is higher than that of CO 2 over N 2 . The maximum selectivity of SO 2 over CO 2 is observed for the COOH functionalized GNR followed by NO 2 and other functionalized GNRs.

Electrically Controlled Coherent Excitonic Steady States in Semiconductor Bilayers

NASA Astrophysics Data System (ADS)

Xie, Ming; MacDonald, Allan

Spatially indirect excitons are long lived bosonic quasiparticles that can form quasi-equilibrium condensed states. Optical access to these excitons has been limited by their small optical matrix elements. Here we propose a promising electrical process that can be used both to populate and to probe fluids of indirect excitons, and is analogous to the crossed Andreev reflection (CAR) process of Cooper pairs in superconductors. We consider vertically stacked multilayer heterostructures containing two transition metal dichalcogenide (TMD) layers that host the indirect excitons, graphene layers on the top and the bottom of the heterostructure, and hBN tunnel barrier layers of variable thickness. When the bias voltage between the graphene leads is smaller than the indirect gap, tunneling between the graphene leads and the TMD hetero-bilayer is possible only through the CAR process. Both DC and low frequency AC bias cases are explored and establish that electrical measurements can be used to determine crucial properties such as the condensate density, interaction strength and CAR tunneling amplitudes. We have also proposed a way to electrically manipulate another type of bosonic quasiparticles, cavity exciton-polaritons, in a laterally contacted structure.

From hopping to ballistic transport in graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Taychatanapat, Thiti

This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature. The second experiment examines electronic properties of Bernal-stacked trilayer graphene. Due to the low mobility of trilayer graphene on SiO 2substrates, we employ hexagonal boron nitride as a local substrate to improve its mobility. This led us to observe a quantum Hall effect with multiple Landau level crossings, proving the coexistence of massless and massive Dirac fermions in Bernal-stacked trilayer graphene. From the position of these crossing points in magnetic field and electron density, we can deduce the band parameters used to model its band structure. At high magnetic field, we observe broken symmetry states via Landau level splittings as well as crossings among these broken-symmetry states. In the third experiment, we investigate transverse magnetic focusing (TMF) in mono-, bi-, and tri-layer graphene. The ability to tune density allows us to electronically modify focal points and investigate TMF continuously from hole to electron regimes. This also allows us to observe the change in band structure of trilayer graphene as a function of applied electric field. Finally, we also observe TMF at room temperature in monolayer graphene which unambiguously proves the existence of ballistic transport at room temperature.

Electromechanically generating electricity with a gapped-graphene electric generator

NASA Astrophysics Data System (ADS)

Dressen, Donald; Golovchenko, Jene

2015-03-01

We demonstrate the fabrication and operation of a gapped-graphene electric generator (G-GEG) device. The G-GEG generates electricity from the mechanical oscillation of droplets of electrolytes and ionic liquids. The spontaneous adsorption of ionic species on graphene charges opposing electric double-layer capacitors (EDLCs) on each half of the device. Modulating the area of contact between the droplet and graphene leads to adsorption/desorption of ions, effectively charging/discharging each EDLC and generating a current. The flow of current supports a potential difference across the G-GEG due to the device's internal impedance. Both the magnitude and polarity of the induced current and voltage show a strong dependence on the type of ionic species used, suggesting that certain ions interact more strongly with graphene than others. We find that a simple model circuit consisting of an AC current source in series with a resistor and a time-varying capacitor accurately predicts the device's dynamic behavior. Additionally, we discuss the effect of graphene's intrinsic quantum capacitance on the G-GEG's performance and speculate on the utility of the device in the context of energy harvesting.

Graphene-based structure, method of suspending graphene membrane, and method of depositing material onto graphene membrane

DOEpatents

Zettl, Alexander K.; Meyer, Jannik Christian

2013-04-02

An embodiment of a method of suspending a graphene membrane across a gap in a support structure includes attaching graphene to a substrate. A pre-fabricated support structure having the gap is attached to the graphene. The graphene and the pre-fabricated support structure are then separated from the substrate which leaves the graphene membrane suspended across the gap in the pre-fabricated support structure. An embodiment of a method of depositing material includes placing a support structure having a graphene membrane suspended across a gap under vacuum. A precursor is adsorbed to a surface of the graphene membrane. A portion of the graphene membrane is exposed to a focused electron beam which deposits a material from the precursor onto the graphene membrane. An embodiment of a graphene-based structure includes a support structure having a gap, a graphene membrane suspended across the gap, and a material deposited in a pattern on the graphene membrane.

Determining the Gaussian Modulus and Edge Properties of 2D Materials: From Graphene to Lipid Bilayers

NASA Astrophysics Data System (ADS)

Zelisko, Matthew; Ahmadpoor, Fatemeh; Gao, Huajian; Sharma, Pradeep

2017-08-01

The dominant deformation behavior of two-dimensional materials (bending) is primarily governed by just two parameters: bending rigidity and the Gaussian modulus. These properties also set the energy scale for various important physical and biological processes such as pore formation, cell fission and generally, any event accompanied by a topological change. Unlike the bending rigidity, the Gaussian modulus is, however, notoriously difficult to evaluate via either experiments or atomistic simulations. In this Letter, recognizing that the Gaussian modulus and edge tension play a nontrivial role in the fluctuations of a 2D material edge, we derive closed-form expressions for edge fluctuations. Combined with atomistic simulations, we use the developed approach to extract the Gaussian modulus and edge tension at finite temperatures for both graphene and various types of lipid bilayers. Our results possibly provide the first reliable estimate of this elusive property at finite temperatures and appear to suggest that earlier estimates must be revised. In particular, we show that, if previously estimated properties are employed, the graphene-free edge will exhibit unstable behavior at room temperature. Remarkably, in the case of graphene, we show that the Gaussian modulus and edge tension even change sign at finite temperatures.

Energy band gaps in graphene nanoribbons with corners

NASA Astrophysics Data System (ADS)

Szczȩśniak, Dominik; Durajski, Artur P.; Khater, Antoine; Ghader, Doried

2016-05-01

In the present paper, we study the relation between the band gap size and the corner-corner length in representative chevron-shaped graphene nanoribbons (CGNRs) with 120° and 150° corner edges. The direct physical insight into the electronic properties of CGNRs is provided within the tight-binding model with phenomenological edge parameters, developed against recent first-principle results. We show that the analyzed CGNRs exhibit inverse relation between their band gaps and corner-corner lengths, and that they do not present a metal-insulator transition when the chemical edge modifications are introduced. Our results also suggest that the band gap width for the CGNRs is predominantly governed by the armchair edge effects, and is tunable through edge modifications with foreign atoms dressing.

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures.

PubMed

Burg, G William; Prasad, Nitin; Fallahazad, Babak; Valsaraj, Amithraj; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Wang, Qingxiao; Kim, Moon J; Register, Leonard F; Tutuc, Emanuel

2017-06-14

We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe 2 . We observe large interlayer current densities of 2 and 2.5 μA/μm 2 and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 and 300 K, respectively.

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

NASA Astrophysics Data System (ADS)

Rehman, Majeed Ur; Qiao, Zhenhua

2018-02-01

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.

EDITORIAL: Special issue on Graphene Special issue on Graphene

NASA Astrophysics Data System (ADS)

Morpurgo, Alberto F.; Trauzettel, Björn

2010-03-01

and effectively reflect the status of different areas of graphene research. The excitonic condensation in a double graphene system is discussed by Kharitonov and Efetov. Borca et al report on a method to fabricate and characterize graphene monolayers epitaxially grown on Ru(0001). Furthermore, the energy and transport gaps in etched graphene nanoribbons are analyzed experimentally by Molitor et al. Mucha-Kruczyński et al review the tight-binding model of bilayer graphene, whereas Wurm et al focus on a theoretical description of the Aharonov-Bohm effect in monolayer graphene rings. Screening effects and collective excitations are studied by Roldán et al. Subsequently, Palacios et al review the electronic and magnetic structures of graphene nanoribbons, a problem that is highly relevant for graphene-based transistors. Klein tunneling in single and multiple barriers in graphene is the topic of the review article by Pereira Jr et al, while De Martino and Egger discuss the spectrum of a magnetic quantum dot in graphene. Titov et al study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. Finally, the resistance modulation of multilayer graphene controlled by gate electric fields is experimentally analyzed by Miyazaki et al. We would like to thank all the authors for their contributions, which combine new results and pedagogical discussions of the state-of-the-art in different areas: it is this combination that most often adds to the value of topical issues. Special thanks also goes to the staff of Institute of Physics Publishing for contributing to the success of this effort.

Electrochemical behavior of monolayer and bilayer graphene.

PubMed

Valota, Anna T; Kinloch, Ian A; Novoselov, Kostya S; Casiraghi, Cinzia; Eckmann, Axel; Hill, Ernie W; Dryfe, Robert A W

2011-11-22

Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical microscopy and Raman spectroscopy. Conductive silver paint and silver wires were used to fabricate contacts; epoxy resin was employed as a masking coating in order to expose a stable, well-defined area of graphene. Both multilayer and monolayer graphene microelectrodes showed quasi-reversible behavior during voltammetric measurements in potassium ferricyanide. However, the standard heterogeneous charge transfer rate constant, k°, was estimated to be higher for monolayer graphene flakes. © 2011 American Chemical Society

Resonant tunneling diode based on band gap engineered graphene antidot structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palla, Penchalaiah, E-mail: penchalaiah.palla@vit.ac.in; Ethiraj, Anita S.; Raina, J. P.

The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green’s Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved self-consistently for device study. The interesting feature in this device is that it is an all graphene RTD with band gap engineered graphene antidot tunnel barriers. Another interesting new finding is that it shows negative differential resistance (NDR), which involves the resonant tunneling in the graphene quantum well through both the electron and hole bound states. The Graphene Antidot Lattice (GAL) barriers in this device efficiently improved themore » Peak to Valley Ratio to approximately 20 even at room temperature. A new fitting model is developed for the number of antidots and their corresponding effective barrier width, which will help in determining effective barrier width of any size of actual antidot geometry.« less

Charging the quantum capacitance of graphene with a single biological ion channel.

PubMed

Wang, Yung Yu; Pham, Ted D; Zand, Katayoun; Li, Jinfeng; Burke, Peter J

2014-05-27

The interaction of cell and organelle membranes (lipid bilayers) with nanoelectronics can enable new technologies to sense and measure electrophysiology in qualitatively new ways. To date, a variety of sensing devices have been demonstrated to measure membrane currents through macroscopic numbers of ion channels. However, nanoelectronic based sensing of single ion channel currents has been a challenge. Here, we report graphene-based field-effect transistors combined with supported lipid bilayers as a platform for measuring, for the first time, individual ion channel activity. We show that the supported lipid bilayers uniformly coat the single layer graphene surface, acting as a biomimetic barrier that insulates (both electrically and chemically) the graphene from the electrolyte environment. Upon introduction of pore-forming membrane proteins such as alamethicin and gramicidin A, current pulses are observed through the lipid bilayers from the graphene to the electrolyte, which charge the quantum capacitance of the graphene. This approach combines nanotechnology with electrophysiology to demonstrate qualitatively new ways of measuring ion channel currents.

Charging the Quantum Capacitance of Graphene with a Single Biological Ion Channel

PubMed Central

2015-01-01

The interaction of cell and organelle membranes (lipid bilayers) with nanoelectronics can enable new technologies to sense and measure electrophysiology in qualitatively new ways. To date, a variety of sensing devices have been demonstrated to measure membrane currents through macroscopic numbers of ion channels. However, nanoelectronic based sensing of single ion channel currents has been a challenge. Here, we report graphene-based field-effect transistors combined with supported lipid bilayers as a platform for measuring, for the first time, individual ion channel activity. We show that the supported lipid bilayers uniformly coat the single layer graphene surface, acting as a biomimetic barrier that insulates (both electrically and chemically) the graphene from the electrolyte environment. Upon introduction of pore-forming membrane proteins such as alamethicin and gramicidin A, current pulses are observed through the lipid bilayers from the graphene to the electrolyte, which charge the quantum capacitance of the graphene. This approach combines nanotechnology with electrophysiology to demonstrate qualitatively new ways of measuring ion channel currents. PMID:24754625

Graphene-Based Polymer Bilayers with Superior Light-Driven Properties for Remote Construction of 3D Structures.

PubMed

Tang, Zhenhua; Gao, Ziwei; Jia, Shuhai; Wang, Fei; Wang, Yonglin

2017-05-01

3D structure assembly in advanced functional materials is important for many areas of technology. Here, a new strategy exploits IR light-driven bilayer polymeric composites for autonomic origami assembly of 3D structures. The bilayer sheet comprises a passive layer of poly(dimethylsiloxane) (PDMS) and an active layer comprising reduced graphene oxides (RGOs), thermally expanding microspheres (TEMs), and PDMS. The corresponding fabrication method is versatile and simple. Owing to the large volume expansion of the TEMs, the two layers exhibit large differences in their coefficients of thermal expansion. The RGO-TEM-PDMS/PDMS bilayers can deflect toward the PDMS side upon IR irradiation via the cooperative effect of the photothermal effect of the RGOs and the expansion of the TEMs, and exhibit excellent light-driven, a large bending deformation, and rapid responsive properties. The proposed RGO-TEM-PDMS/PDMS composites with excellent light-driven bending properties are demonstrated as active hinges for building 3D geometries such as bidirectionally folded columns, boxes, pyramids, and cars. The folding angle (ranging from 0° to 180°) is well-controlled by tuning the active hinge length. Furthermore, the folded 3D architectures can permanently preserve the deformed shape without energy supply. The presented approach has potential in biomedical devices, aerospace applications, microfluidic devices, and 4D printing.

Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures

NASA Astrophysics Data System (ADS)

Noshin, Maliha; Intisar Khan, Asir; Subrina, Samia

2018-05-01

Recently, stanene and silicene based nanostructures with low thermal conductivity have incited noteworthy interest due to their prospect in thermoelectrics. Aiming at the possibility of extracting lower thermal conductivity, in this study, we have proposed and modeled stanene/silicene heterobilayer nanoribbons, a new heterostructure and subsequently characterized their thermal transport by using an equilibrium molecular dynamics simulation. In addition, the thermal transport in bilayer stanene is also studied and compared. We have computed the thermal conductivity of the stanene/silicene and bilayer stanene nanostructures to characterize their thermal transport phenomena. The studied nanostructures show good thermal stability within the temperature range of 100-600 K. The room temperature thermal conductivities of pristine 10 nm × 3 nm stanene/silicene hetero-bilayer and stanene bilayer are estimated to be 3.63 ± 0.27 W m-1 K-1 and 1.31 ± 0.34 W m-1 K-1, respectively, which are smaller than that of silicene, graphene and some other 2D monolayers as well as heterobilayers such as stanene/graphene and silicene/graphene. In the temperature range of 100-600 K, the thermal conductivity of our studied bilayer nanoribbons decreases with an increase in the temperature. Furthermore, we have investigated the dependence of our estimated thermal conductivity on the size of the considered nanoribbons. The thermal conductivities of both the nanoribbons are found to increase with an increase in the width of the structure. The thermal conductivity shows a similar increasing trend with the increase in the ribbon length, as well. Our results suggest that, the low thermal conductivity of our studied bilayer structures can be further decreased by nanostructuring. The significantly low thermal conductivity of the stanene/silicene heterobilayer and stanene bilayer nanoribbons realized in our study would provide a good insight and encouragement into their appealing prospect in the

Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures.

PubMed

Noshin, Maliha; Khan, Asir Intisar; Subrina, Samia

2018-05-04

Recently, stanene and silicene based nanostructures with low thermal conductivity have incited noteworthy interest due to their prospect in thermoelectrics. Aiming at the possibility of extracting lower thermal conductivity, in this study, we have proposed and modeled stanene/silicene heterobilayer nanoribbons, a new heterostructure and subsequently characterized their thermal transport by using an equilibrium molecular dynamics simulation. In addition, the thermal transport in bilayer stanene is also studied and compared. We have computed the thermal conductivity of the stanene/silicene and bilayer stanene nanostructures to characterize their thermal transport phenomena. The studied nanostructures show good thermal stability within the temperature range of 100-600 K. The room temperature thermal conductivities of pristine 10 nm × 3 nm stanene/silicene hetero-bilayer and stanene bilayer are estimated to be 3.63 ± 0.27 W m -1 K -1 and 1.31 ± 0.34 W m -1 K -1 , respectively, which are smaller than that of silicene, graphene and some other 2D monolayers as well as heterobilayers such as stanene/graphene and silicene/graphene. In the temperature range of 100-600 K, the thermal conductivity of our studied bilayer nanoribbons decreases with an increase in the temperature. Furthermore, we have investigated the dependence of our estimated thermal conductivity on the size of the considered nanoribbons. The thermal conductivities of both the nanoribbons are found to increase with an increase in the width of the structure. The thermal conductivity shows a similar increasing trend with the increase in the ribbon length, as well. Our results suggest that, the low thermal conductivity of our studied bilayer structures can be further decreased by nanostructuring. The significantly low thermal conductivity of the stanene/silicene heterobilayer and stanene bilayer nanoribbons realized in our study would provide a good insight and encouragement into their appealing prospect

Scanning tunneling microscopy and spectroscopy of twisted trilayer graphene

NASA Astrophysics Data System (ADS)

Zuo, Wei-Jie; Qiao, Jia-Bin; Ma, Dong-Lin; Yin, Long-Jing; Sun, Gan; Zhang, Jun-Yang; Guan, Li-Yang; He, Lin

2018-01-01

Twist, as a simple and unique degree of freedom, could lead to enormous novel quantum phenomena in bilayer graphene. A small rotation angle introduces low-energy van Hove singularities (VHSs) approaching the Fermi level, which result in unusual correlated states in the bilayer graphene. It is reasonable to expect that the twist could also affect the electronic properties of few-layer graphene dramatically. However, such an issue has remained experimentally elusive. Here, by using scanning tunneling microscopy/spectroscopy (STM/STS), we systematically studied a twisted trilayer graphene (TTG) with two different small twist angles between adjacent layers. Two sets of VHSs, originating from the two twist angles, were observed in the TTG, indicating that the TTG could be simply regarded as a combination of two different twisted bilayers of graphene. By using high-resolution STS, we observed a split of the VHSs and directly imaged the spatial symmetry breaking of electronic states around the VHSs. These results suggest that electron-electron interactions play an important role in affecting the electronic properties of graphene systems with low-energy VHSs.

Anisotropic carrier mobility in single- and bi-layer C3N sheets

NASA Astrophysics Data System (ADS)

Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

2018-05-01

Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

Valley-symmetric quasi-1D transport in ballistic graphene

NASA Astrophysics Data System (ADS)

Lee, Hu-Jong

We present our recent studies on gate-defined valley-symmetric one-dimensional (1D) carrier guiding in ballistic monolayer graphene and valley-symmetry-protected topological 1D transport in ballistic bilayer graphene. Successful carrier guiding was realized in ballistic monolayer graphene even in the absence of a band gap by inducing a high distinction ( more than two orders of magnitude) in the carrier density between the region of a quasi-1D channel and the rest of the top-gated regions. Conductance of a channel shows quantized values in units of 4e2/ h, suggesting that the valley symmetry is preserved. For the latter, the topological 1D conduction was realized between two closely arranged insulating regions with inverted band gaps, induced under a pair of split dual gating with polarities opposite to each other. The maximum conductance along the boundary channel showed 4e2/ h, again with the preserved valley symmetry. The 1D topological carrier guiding demonstrated in this study affords a promising route to robust valleytronic applications and sophisticated valley-associated functionalities based on 2D materials. This work was funded by the National Research Foundation of Korea.

Electronic Structure and Morphology of Graphene Layers on SiC

NASA Astrophysics Data System (ADS)

Ohta, Taisuke

2008-03-01

Recent years have witnessed the discovery and the unique electronic properties of graphene, a sheet of carbon atoms arranged in a honeycomb lattice. The unique linear dispersion relation of charge carriers near the Fermi level (``Dirac Fermions'') lead to exciting transport properties, such as an unusual quantum Hall effect, and have aroused scientific and technological interests. On the way towards graphene-based electronics, a knowledge of the electronic band structure and the morphology of epitaxial graphene films on silicon carbide substrates is imperative. We have studied the evolution of the occupied band structure and the morphology of graphene layers on silicon carbide by systematically increasing the layer thickness. Using angle-resolved photoemission spectroscopy (ARPES), we examine this unique 2D system in its development from single layer to multilayers, by characteristic changes in the π band, the highest occupied state, and the dispersion relation in the out-of-plane electron wave vector in particular. The evolution of the film morphology is evaluated by the combination of low-energy electron microscopy and ARPES. By exploiting the sensitivity of graphene's electronic states to the charge carrier concentration, changes in the on-site Coulomb potential leading to a change of π and π* bands can be examined using ARPES. We demonstrate that, in a graphene bilayer, the gap between π and π* bands can be controlled by selectively adjusting relative carrier concentrations, which suggests a possible application of the graphene bilayer for switching functions in electronic devices. This work was done in collaboration with A. Bostwick, J. L. McChesney, and E. Rotenberg at Advanced Light Source, Lawrence Berkeley National Laboratory, K. Horn at Fritz-Haber-Institut, K. V. Emtsev and Th. Seyller at Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, and F. El Gabaly and A. K. Schmid at National Center for Electron Microscopy, Lawrence Berkeley

Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.

PubMed

Wu, Han-Chun; Chaika, Alexander N; Huang, Tsung-Wei; Syrlybekov, Askar; Abid, Mourad; Aristov, Victor Yu; Molodtsova, Olga V; Babenkov, Sergey V; Marchenko, D; Sánchez-Barriga, Jaime; Mandal, Partha Sarathi; Varykhalov, Andrei Yu; Niu, Yuran; Murphy, Barry E; Krasnikov, Sergey A; Lübben, Olaf; Wang, Jing Jing; Liu, Huajun; Yang, Li; Zhang, Hongzhou; Abid, Mohamed; Janabi, Yahya T; Molotkov, Sergei N; Chang, Ching-Ray; Shvets, Igor

2015-09-22

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

NASA Astrophysics Data System (ADS)

Daniels, Kevin M.; Jadidi, M. Mehdi; Sushkov, Andrei B.; Nath, Anindya; Boyd, Anthony K.; Sridhara, Karthik; Drew, H. Dennis; Murphy, Thomas E.; Myers-Ward, Rachael L.; Gaskill, D. Kurt

2017-06-01

Exploiting the underdeveloped terahertz range (~1012-1013 Hz) of the electromagnetic spectrum could advance many scientific fields (e.g. medical imaging for the identification of tumors and other biological tissues, non-destructive evaluation of hidden objects or ultra-broadband communication). Despite the benefits of operating in this regime, generation, detection and manipulation have proven difficult, as few materials have functional interactions with THz radiation. In contrast, graphene supports resonances in the THz regime through structural confinement of surface plasmons, which can lead to enhanced absorption. In prior work, the achievable plasmon resonances in such structures have been limited by multiple electron scattering mechanisms (i.e. large carrier scattering rates) which greatly broaden the resonance (>100 cm-1 3 THz). We report the narrowest room temperature Drude response to-date, 30 cm-1 (0.87 THz), obtained using quasi-free standing bilayer epitaxial graphene (QFS BLG) synthesized on (0 0 0 1)6H-SiC. This narrow response is due to a 4-fold increase in carrier mobility and improved thickness and electronic uniformity of QFS BLG. Moreover, QFS BLG samples patterned into microribbons targeting 1.8-5.7 THz plasmon resonances also exhibit low scattering rates (37-53 cm-1). Due to the improved THz properties of QFS BLG, the effects of e-beam processing on carrier scattering rates was determined and we found that fabrication conditions can be tuned to minimize the impact on optoelectronic properties. In addition, electrostatic gating of patterned QFS BLG shows narrow band THz amplitude modulation. Taken together, these properties of QFS BLG should facilitate future development of THz optoelectronic devices for monochromatic applications.

Optical Band Gap Alteration of Graphene Oxide via Ozone Treatment.

PubMed

Hasan, Md Tanvir; Senger, Brian J; Ryan, Conor; Culp, Marais; Gonzalez-Rodriguez, Roberto; Coffer, Jeffery L; Naumov, Anton V

2017-07-25

Graphene oxide (GO) is a graphene derivative that emits fluorescence, which makes GO an attractive material for optoelectronics and biotechnology. In this work, we utilize ozone treatment to controllably tune the band gap of GO, which can significantly enhance its applications. Ozone treatment in aqueous GO suspensions yields the addition/rearrangement of oxygen-containing functional groups suggested by the increase in vibrational transitions of C-O and C=O moieties. Concomitantly it leads to an initial increase in GO fluorescence intensity and significant (100 nm) blue shifts in emission maxima. Based on the model of GO fluorescence originating from sp 2 graphitic islands confined by oxygenated addends, we propose that ozone-induced functionalization decreases the size of graphitic islands affecting the GO band gap and emission energies. TEM analyses of GO flakes confirm the size decrease of ordered sp 2 domains with ozone treatment, whereas semi-empirical PM3 calculations on model addend-confined graphitic clusters predict the inverse dependence of the band gap energies on sp 2 cluster size. This model explains ozone-induced increase in emission energies yielding fluorescence blue shifts and helps develop an understanding of the origins of GO fluorescence emission. Furthermore, ozone treatment provides a versatile approach to controllably alter GO band gap for optoelectronics and bio-sensing applications.

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

PubMed

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Electronic Properties of Graphene-PtSe2 Contacts.

PubMed

Sattar, Shahid; Schwingenschlögl, Udo

2017-05-10

In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe 2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe 2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe 2 and a p-type Schottky contact with bilayer PtSe 2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.

Optimizing long-range order, band gap, and group velocities for graphene on close-packed metal surfaces.

PubMed

Natterer, F D; Rusponi, S; Papagno, M; Carbone, C; Brune, H

2012-08-08

We compare different growth methods with the aim of optimizing the long-range order of a graphene layer grown on Ru(0001). Combining chemical vapor deposition with carbon loading and segregation of the surface layer leads to autocorrelation lengths of 240 Å. We present several routes to band gap and charge carrier mobility engineering for the example of graphene on Ir(111). Ir cluster superlattices self-assembled onto the graphene moiré pattern produce a strong renormalization of the electron group velocity close to the Dirac point, leading to highly anisotropic Dirac cones and the enlargement of the gap from 140 to 340 meV. This gap can further be enhanced to 740 meV by Na co-adsorption onto the Ir cluster superlattice at room temperature. This value is close to that of Ge, and the high group velocity of the charge carriers is fully preserved. We also present data for Na adsorbed without the Ir clusters. In both cases we find that the Na is on top of the graphene layer.

High sensitivity plasmonic sensor using hybrid structure of graphene stripe combined with gold gap-ring

NASA Astrophysics Data System (ADS)

Du, Zhiyuan; Hu, Bin; Cyril, Planchon; Liu, Juan; Wang, Yongtian

2017-10-01

Local surface plasmonic resonance (LSPR) produced by metallic nano-structures is often sensitive to the refractive index of the surrounding media and can be applied for sensing. However, it often suffers from large line width caused by large plasmonic radiative damping, especially in the infrared (IR) frequencies, which reduces the sensitivity. Here we propose a hybrid structure consists of a graphene stripe and a gold gap-ring at short-IR frequencies (1-3 µm). Due to the low loss and high plasmonic confinement of graphene, LSPR line width of 6 nm is obtained. In addition, due to the strong coupling of the gold gap-ring with graphene stripe, the intensity of graphene LSPR is enhanced by 100 times. Simulation results show that the sensitivity of the sensor is ~1000 nm/RIU (refractive index unit) and the figure of merit (FoM) can reach up to 383.

Band gap opening and optical absorption enhancement in graphene using ZnO nanocluster

NASA Astrophysics Data System (ADS)

Monshi, M. M.; Aghaei, S. M.; Calizo, I.

2018-05-01

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn12O12 can open a band gap of 14.5 meV in graphene, increase its optical absorption by 1.67 times covering the visible spectrum which extends to the infra-red (IR) range, and exhibits a slight non-linear I-V characteristic depending on the applied bias. These findings envisage that a graphene/Zn12O12 heterostructure can be appropriate for energy harvesting, photodetection, and photochemical devices.

Structural and electron diffraction scaling of twisted graphene bilayers

NASA Astrophysics Data System (ADS)

Zhang, Kuan; Tadmor, Ellad B.

2018-03-01

Multiscale simulations are used to study the structural relaxation in twisted graphene bilayers and the associated electron diffraction patterns. The initial twist forms an incommensurate moiré pattern that relaxes to a commensurate microstructure comprised of a repeating pattern of alternating low-energy AB and BA domains surrounding a high-energy AA domain. The simulations show that the relaxation mechanism involves a localized rotation and shrinking of the AA domains that scales in two regimes with the imposed twist. For small twisting angles, the localized rotation tends to a constant; for large twist, the rotation scales linearly with it. This behavior is tied to the inverse scaling of the moiré pattern size with twist angle and is explained theoretically using a linear elasticity model. The results are validated experimentally through a simulated electron diffraction analysis of the relaxed structures. A complex electron diffraction pattern involving the appearance of weak satellite peaks is predicted for the small twist regime. This new diffraction pattern is explained using an analytical model in which the relaxation kinematics are described as an exponentially-decaying (Gaussian) rotation field centered on the AA domains. Both the angle-dependent scaling and diffraction patterns are in quantitative agreement with experimental observations. A Matlab program for extracting the Gaussian model parameters accompanies this paper.

Electronic transport in Thue-Morse gapped graphene superlattice under applied bias

NASA Astrophysics Data System (ADS)

Wang, Mingjing; Zhang, Hongmei; Liu, De

2018-04-01

We investigate theoretically the electronic transport properties of Thue-Morse gapped graphene superlattice under an applied electric field. The results indicate that the combined effect of the band gap and the applied bias breaks the angular symmetry of the transmission coefficient. The zero-averaged wave-number gap can be greatly modulated by the band gap and the applied bias, but its position is robust against change of the band gap. Moreover, the conductance and the Fano factor are strongly dependent not only on the Fermi energy but also on the band gap and the applied bias. In the vicinity of the new Dirac point, the minimum value of the conductance obviously decreases and the Fano factor gradually forms a Poissonian value plateau with increasing of the band gap.

Strain, stabilities and electronic properties of hexagonal BN bilayers

NASA Astrophysics Data System (ADS)

Fujimoto, Yoshitaka; Saito, Susumu

Hexagonal boron nitride (h-BN) atomic layers have been regarded as fascinating materials both scientifically and technologically due to the sizable band gap. This sizable band-gap nature of the h-BN atomic layers would provide not only new physical properties but also novel nano- and/or opto-electronics applications. Here, we study the first-principles density-functional study that clarifies the biaxial strain effects on the energetics and the electronic properties of h-BN bilayers. We show that the band gaps of the h-BN bilayers are tunable by applying strains. Furthermore, we show that the biaxial strains can produce a transition from indirect to direct band gaps of the h-BN bilayer. We also discuss that both AA and AB stacking patterns of h-BN bilayer become feasible structures because h-BN bilayers possess two different directions in the stacking patterns. Supported by MEXT Elements Strategy Initiative to Form Core Research Center through Tokodai Institute for Element Strategy, JSPS KAKENHI Grant Numbers JP26390062 and JP25107005.

Tunable zero-line modes via magnetic field in bilayer graphene

NASA Astrophysics Data System (ADS)

Wang, Ke; Qiao, Zhenhua

Zero-line modes appear in bilayer graphene at the internal boundary between two opposite vertical electrostatic confinements. These one-dimensional modes are metallic along the boundary and exhibit quantized conductance in the absence of inter-valley scattering. However, experimental results show that the conductance is around 0.5 e2/h rather than quantized. This observation can be explained from our numerical results, which suggest that the scattering between zero-line mode and bound states and the presence of atomic scale disorders that provide inter-valley scattering can effectively reduce the conductance to about 0.5 e2/h. We further find that out-of-plane magnetic field can strongly suppress these scattering mechanisms and gives rise to nearly quantized conductance. On one hand, the presence of magnetic field makes bound states become Landau levels, which reduces the scattering between zero-line mode and bound states. On the other hand, the wave function distributions of oppositely propagating zero-line modes at different valleys are spatially separated, which can strongly suppress the inter-valley scattering. Specifically speaking, the conductance can be increased to 3.2 e2/h at 8 T even when the atomic Anderson type disorders are considered.

Two-dimensional layered semiconductor/graphene heterostructures for solar photovoltaic applications.

PubMed

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Song, Eui Sang; Yu, Bin

2014-11-07

Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer graphene, multilayer graphene helps in achieving improved solar cell performance due to superior electrical conductivity. The all-layered-material Schottky barrier solar cell employing WS2 as a photoactive semiconductor exhibits efficient photon absorption in the visible spectral range, yielding 3.3% photoelectric conversion efficiency with multilayer graphene as the Schottky contact. Carrier transport at the graphene/WS2 interface and the interfacial recombination process in the Schottky barrier solar cells are examined.

Understanding and Controlling the Electronic Properties of Graphene Using Scanning Probe Microscopy

DTIC Science & Technology

2014-07-21

Dirac point in gated bilayer graphene, Applied Physics Letters, (12 2009): 243502. doi : 10.1063/1.3275755 Brian J. LeRoy, Adam T. Roberts, Rolf...of soliton motion and stacking in trilayer graphene, Nature Materials , (04 2014): 0. doi : 10.1038/nmat3965 Matthew Yankowitz, Joel I-Jan Wang...of bilayer graphene via quasiparticle scattering, APL Materials , (09 2014): 92503. doi : Matthew Yankowitz, Fenglin Wang, Chun Ning Lau, Brian J

Piezoelectric substrate effect on electron-acoustic phonon scattering in bilayer graphene

NASA Astrophysics Data System (ADS)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We have studied the effect of piezoelectric scattering as a function of electron temperature and distance between the sample and the substrate on electron-acoustic phonon scattering rate in Bilayer Graphene sitting on a piezoelectric substrate. We obtain approximate analytical result by neglecting the chiral nature of carriers and then proceed to obtain unapproximated numerical results for the scattering rate incorporating chirality of charge carriers. We find that on the incorporation of full numerical computation the magnitude as well as the power exponent both is affected with the power exponent changed from T3 to T3.31 in the low temperature range and to T6.98 dependence in the temperature range (>5K). We also find that the distance between the sample and substrate begins to strongly affect the scattering rate at temperatures above 10K. These calculation not only suggest the influencing effect of piezoelectric substrate on the transport properties of Dirac Fermions at very low temperatures but also open a channel to study low dimension structures by probing piezoelectric acoustical phonons.

Determination of gap solution and critical temperature in doped graphene superconductivity

NASA Astrophysics Data System (ADS)

Xu, Chenmei; Yang, Yisong

2017-04-01

It is shown that the gap solution and critical transition temperature are significantly enhanced by doping in a recently developed BCS formalism for graphene superconductivity in such a way that positive gap and transition temperature both occur in arbitrary pairing coupling as far as doping is present. The analytic construction of the BCS gap and transition temperature offers highly effective globally convergent iterative methods for the computation of these quantities. A series of numerical examples are presented as illustrations which are in agreement with the theoretical and experimental results obtained in the physics literature and consolidate the analytic understanding achieved.

Structure and energetics of carbon, hexagonal boron nitride, and carbon/hexagonal boron nitride single-layer and bilayer nanoscrolls

NASA Astrophysics Data System (ADS)

Siahlo, Andrei I.; Poklonski, Nikolai A.; Lebedev, Alexander V.; Lebedeva, Irina V.; Popov, Andrey M.; Vyrko, Sergey A.; Knizhnik, Andrey A.; Lozovik, Yurii E.

2018-03-01

Single-layer and bilayer carbon and hexagonal boron nitride nanoscrolls as well as nanoscrolls made of bilayer graphene/hexagonal boron nitride heterostructure are considered. Structures of stable states of the corresponding nanoscrolls prepared by rolling single-layer and bilayer rectangular nanoribbons are obtained based on the analytical model and numerical calculations. The lengths of nanoribbons for which stable and energetically favorable nanoscrolls are possible are determined. Barriers to rolling of single-layer and bilayer nanoribbons into nanoscrolls and barriers to nanoscroll unrolling are calculated. Based on the calculated barriers nanoscroll lifetimes in the stable state are estimated. Elastic constants for bending of graphene and hexagonal boron nitride layers used in the model are found by density functional theory calculations.

Conductivity of graphene in the framework of Dirac model: Interplay between nonzero mass gap and chemical potential

NASA Astrophysics Data System (ADS)

Klimchitskaya, G. L.; Mostepanenko, V. M.; Petrov, V. M.

2017-12-01

The complete theory of electrical conductivity of graphene at arbitrary temperature is developed with taking into account mass-gap parameter and chemical potential. Both the in-plane and out-of-plane conductivities of graphene are expressed via the components of the polarization tensor in (2+1)-dimensional space-time analytically continued to the real frequency axis. Simple analytic expressions for both the real and imaginary parts of the conductivity of graphene are obtained at zero and nonzero temperature. They demonstrate an interesting interplay depending on the values of mass gap and chemical potential. In the local limit, several results obtained earlier using various approximate and phenomenological approaches are reproduced, refined, and generalized. The numerical computations of both the real and imaginary parts of the conductivity of graphene are performed to illustrate the obtained results. The analytic expressions for the conductivity of graphene obtained in this paper can serve as a guide in the comparison between different theoretical approaches and between experiment and theory.

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

NASA Astrophysics Data System (ADS)

Linh, Dang Khanh; Khanh, Nguyen Quoc

2018-03-01

We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas-Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower Sd. Using the finite-temperature RPA, we calculate temperature and density dependence of Sd in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

Sulfur-doped Graphene Nanoribbons with a Sequence of Distinct Band Gaps

NASA Astrophysics Data System (ADS)

Du, Shi-Xuan; Zhang, Yan-Fang; Zhang, Yi; Berger, Reinhard; Feng, Xinliang; Mullen, Klaus; Lin, Xiao; Zhang, Yu-Yang; Pantelides, Sokrates T.; Gao, Hong-Jun

Unlike free-standing graphene, graphene nanoribbons (GNRs) can possess semiconducting band gap. However, achieving such control has been a major challenge in the fabrication of GNRs. Chevron-type GNRs were recently achieved by surface-assisted polymerization of pristine or N-substituted oligophenylene monomers. By mixing two different monomers, GNR heterojunctions can in principle be fabricated. Here we report fabrication and characterization of chevron-type GNRs by using sulfur-substituted oligophenylene monomers to achieve GNRs and related heterostructures for the first time. Importantly, our first-principles calculations show that the band gaps of GNRs can be tailored by different S configurations in cyclodehydrogenated isomers through debromination and intramolecular cyclodehydrogenation. This feature should open up new avenues to create multiple GNR heterojunctions by engineering the sulfur configurations. These predictions have been confirmed by Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). The unusual sequence of intraribbon heterojunctions may be useful for nanoscale optoelectronic applications based on quantum dots

Structural and electronic properties of multilayer graphene on monolayer hexagonal boron nitride/nickel (111) interface system: A van der Waals density functional study

NASA Astrophysics Data System (ADS)

Yelgel, Celal

2016-02-01

The structural and electronic properties of multilayer graphene adsorbed on monolayer hexagonal boron nitride (h-BN)/Ni(111) interface system are investigated using the density functional theory with a recently developed non-local van der Waals density functional (rvv10). The most energetically favourable configuration for a monolayer h-BN/Ni(111) interface is found to be N atom atop the Ni atoms and B atom in fcc site with the interlayer distance of 2.04 Å and adsorption energy of 302 meV/BN. Our results show that increasing graphene layers on a monolayer h-BN/Ni(111) interface leads to a weakening of the interfacial interaction between the monolayer h-BN and Ni(111) surface. The adsorption energy of graphene layers on the h-BN/Ni(111) interface is found to be in the range of the 50-120 meV/C atom as the vertical distance from h-BN to the bottommost graphene layers decreases. With the adsorption of a multilayer graphene on the monolayer h-BN/Ni(111) interface system, the band gap of 0.12 eV and 0.25 eV opening in monolayer graphene and bilayer graphene near the K point is found with an upward shifting of the Fermi level. However, a stacking-sensitive band gap is opened in trilayer graphene. We obtain the band gap of 0.35 eV close to the K point with forming a Mexican hat band structure for ABC-stacked trilayer graphene.

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Tai, Lixuan; Zhu, Daming; Liu, Xing; Yang, Tieying; Wang, Lei; Wang, Rui; Jiang, Sheng; Chen, Zhenhua; Xu, Zhongmin; Li, Xiaolong

2018-06-01

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Figure not available: see fulltext.

Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging

NASA Astrophysics Data System (ADS)

Yu, Yuanfang; Li, Zhenzhen; Wang, Wenhui; Guo, Xitao; Jiang, Jie; Nan, Haiyan; Ni, Zhenhua

2017-03-01

CVD graphene is a promising candidate for optoelectronic applications due to its high quality and high yield. However, multi-layer domains could inevitably form at the nucleation centers during the growth. Here, we propose an optical imaging technique to precisely identify the multilayer domains and also the ratio of their coverage in large-scale CVD monolayer graphene. We have also shown that the stacking disorder in twisted bilayer graphene as well as the impurities on the graphene surface could be distinguished by optical imaging. Finally, we investigated the effects of bilayer domains on the optical and electrical properties of CVD graphene, and found that the carrier mobility of CVD graphene is seriously limited by scattering from bilayer domains. Our results could be useful for guiding future optoelectronic applications of large-scale CVD graphene. Project supported by the National Natural Science Foundation of China (Nos. 61422503, 61376104), the Open Research Funds of Key Laboratory of MEMS of Ministry of Education (SEU, China), and the Fundamental Research Funds for the Central Universities.

Buckling-dependent switching behaviours in shifted bilayer germanene nanoribbons: A computational study

NASA Astrophysics Data System (ADS)

Arjmand, T.; Tagani, M. Bagheri; Soleimani, H. Rahimpour

2018-01-01

Bilayer germanene nanoribbons are investigated in different stacks like buckled and flat armchair and buckled zigzag germanene nanoribbons by performing theoretical calculations using the nonequilibrium Greens function method combined with density functional theory. In these bilayer types, the current oscillates with change of interlayer distances or intra-layer overlaps and is dependent on the type of the bilayer. Band gap of AA-stacked of shifted flat bilayer armchair germanene nanoribbon oscillates by change of interlayer distance which is in contrast to buckled bilayer armchair germanene nanoribbon. So, results show the buckling makes system tend to be a semiconductor with wide band gap. Therefore, AA-stacked of shifted flat bilayer armchair germanene nanoribbon has properties between zigzag and armchair edges, the higher current under bias voltages similar to zigzag edge and also oscillations in current like buckled armchair edges. Also, it is found that HOMO-LUMO band gap strongly affects oscillation in currents and their I-V characteristic. This kind of junction improves the switching properties at low voltages around the band gap.

Influence of the ordering of impurities on the appearance of an energy gap and on the electrical conductance of graphene.

PubMed

Repetsky, S P; Vyshyvana, I G; Kruchinin, S P; Bellucci, Stefano

2018-06-14

In the one-band model of strong coupling, the influence of substitutional impurity atoms on the energy spectrum and electrical conductance of graphene is studied. It is established that the ordering of substitutional impurity atoms on nodes of the crystal lattice causes the appearance of a gap in the energy spectrum of graphene with width η|δ| centered at the point yδ, where η is the parameter of ordering, δ is the difference of the scattering potentials of impurity atoms and carbon atoms, and y is the impurity concentration. The maximum value of the parameter of ordering is [Formula: see text]. For the complete ordering of impurity atoms, the energy gap width equals [Formula: see text]. If the Fermi level falls in the region of the mentioned gap, then the electrical conductance [Formula: see text] at the ordering of graphene, i.e., the metal-dielectric transition arises. If the Fermi level is located outside the gap, then the electrical conductance increases with the parameter of order η by the relation [Formula: see text]. At the concentration [Formula: see text], as the ordering of impurity atoms η →1, the electrical conductance of graphene [Formula: see text], i.e., the transition of graphene in the state of ideal electrical conductance arises.

Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

NASA Astrophysics Data System (ADS)

Li, Yong-Jun; Sun, Qing-Qing; Chen, Lin; Zhou, Peng; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei

2012-03-01

We proposed intercalation of hexagonal boron nitride (hBN) in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

Topological gaps without masses in driven graphene-like systems

NASA Astrophysics Data System (ADS)

Iadecola, Thomas; Neupert, Titus; Chamon, Claudio

2014-03-01

We illustrate the possibility of realizing band gaps in graphene-like systems that fall outside the existing classification of gapped Dirac Hamiltonians in terms of masses. As our primary example we consider a band gap arising due to time-dependent distortions of the honeycomb lattice. By means of an exact, invertible, and transport-preserving mapping to a time-independent Hamiltonian, we show that the system exhibits Chern-insulating phases with quantized Hall conductivities +/-e2 / h . The chirality of the corresponding gapless edge modes is controllable by both the frequency of the driving and the manner in which sublattice symmetry is broken by the dynamical lattice modulations. We demonstrate that, while these phases are in the same topological sector as the Haldane model, they are nevertheless separated from the latter by a gap-closing transition unless an extra parameter is added to the Hamiltonian. Finally, we discuss a promising possible realization of this physics in photonic lattices. This work is supported in part by DOE Grant DEF-06ER46316 (T.I. and C.C.).

Orbital-dependent Electron-Hole Interaction in Graphene and Associated Multi-Layer Structures

PubMed Central

Deng, Tianqi; Su, Haibin

2015-01-01

We develop an orbital-dependent potential to describe electron-hole interaction in materials with structural 2D character, i.e. quasi-2D materials. The modulated orbital-dependent potentials are also constructed with non-local screening, multi-layer screening, and finite gap due to the coupling with substrates. We apply the excitonic Hamiltonian in coordinate-space with developed effective electron-hole interacting potentials to compute excitons’ binding strength at M (π band) and Γ (σ band) points in graphene and its associated multi-layer forms. The orbital-dependent potential provides a range-separated property for regulating both long- and short-range interactions. This accounts for the existence of the resonant π exciton in single- and bi-layer graphenes. The remarkable strong electron-hole interaction in σ orbitals plays a decisive role in the existence of σ exciton in graphene stack at room temperature. The interplay between gap-opening and screening from substrates shed a light on the weak dependence of σ exciton binding energy on the thickness of graphene stacks. Moreover, the analysis of non-hydrogenic exciton spectrum in quasi-2D systems clearly demonstrates the remarkable comparable contribution of orbital dependent potential with respect to non-local screening process. The understanding of orbital-dependent potential developed in this work is potentially applicable for a wide range of materials with low dimension. PMID:26610715

Calculation of electron spectra and some problems in the thermodynamics of graphene layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alisultanov, Z. Z., E-mail: zaur0102@gmail.com

The expressions for the energy spectra of monolayer, bilayer, and multilayer graphene, as well as epitaxial graphene, are derived using the quantum Green’s functions method. Analytic expressions are obtained for the densities of states of these systems. It is shown that a bandgap can appear the spectrum of an epitaxial graphene bilayer. A number of problems in the thermodynamics of electrons in free and epitaxial graphene layers are considered as applications. Analytic expressions are obtained for the chemical potential and heat capacity in the limiting cases of low and high temperatures. Quantum oscillations of heat capacity in graphene are analyzedmore » taking into account the Coulomb interaction. The Berry phase of epitaxial graphene is investigated.« less

Graphene Calisthenics: Modeling the Polymer-induced Graphene Stretching for Next Generation Electronics

NASA Astrophysics Data System (ADS)

Huo, Mandy; Meaker, Kacey; Chong, Su-Ann; Crommie, Michael

2014-03-01

Graphene is one atomic layer of graphite. It is stronger than steel yet very elastic. Although graphene is a semiconductor with no band gap, we can introduce a gap using various methods in order to make it useful in next-generation electronics. One way to do this is to strain graphene. While we can easily strain graphene uniaxially, this type of strain does not produce appreciable band gaps until relatively high strain percentages close to the fracture point of graphene. However, with a special strain geometry we can produce band gaps well before reaching the breaking point of graphene. This has been done experimentally, but not in a controlled manner. From previous research, strain percentages around 10 percent produce appreciable band gaps. Increasing the strain will increase the size of these gaps, but graphene breaks at around 20 percent strain. We propose to control the amount by which we strain graphene by placing it on a special polymer which expands when light is shone on it. In this project we use COMSOL, a finite element analysis software, to estimate the strain resulting in graphene due to stretching it with a given polymer geometry to find the shapes which will produce the specified strain.

Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride

DOE PAGES

Wang, Eryin; Lu, Xiaobo; Ding, Shijie; ...

2016-08-22

Graphene/hexagonal boron nitride (h-BN) has emerged as a model van der Waals heterostructure as the superlattice potential, which is induced by lattice mismatch and crystal orientation, gives rise to various novel quantum phenomena, such as the self-similar Hofstadter butterfly states. Although the newly generated second-generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, fundamental knowledge of SDCs, such as locations and dispersion, and the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. In this work we report direct experimental results on themore » dispersion of SDCs in 0°-aligned graphene/h-BN heterostructures using angle-resolved photoemission spectroscopy. Our data unambiguously reveal SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of approximately 100 meV and approximately 160 meV are observed at the SDCs and the original graphene Dirac cone, respectively. Our work highlights the important role of a strong inversion-symmetry-breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.« less

Unconventional superconductivity in magic-angle graphene superlattices.

PubMed

Cao, Yuan; Fatemi, Valla; Fang, Shiang; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Jarillo-Herrero, Pablo

2018-04-05

The behaviour of strongly correlated materials, and in particular unconventional superconductors, has been studied extensively for decades, but is still not well understood. This lack of theoretical understanding has motivated the development of experimental techniques for studying such behaviour, such as using ultracold atom lattices to simulate quantum materials. Here we report the realization of intrinsic unconventional superconductivity-which cannot be explained by weak electron-phonon interactions-in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle. For twist angles of about 1.1°-the first 'magic' angle-the electronic band structure of this 'twisted bilayer graphene' exhibits flat bands near zero Fermi energy, resulting in correlated insulating states at half-filling. Upon electrostatic doping of the material away from these correlated insulating states, we observe tunable zero-resistance states with a critical temperature of up to 1.7 kelvin. The temperature-carrier-density phase diagram of twisted bilayer graphene is similar to that of copper oxides (or cuprates), and includes dome-shaped regions that correspond to superconductivity. Moreover, quantum oscillations in the longitudinal resistance of the material indicate the presence of small Fermi surfaces near the correlated insulating states, in analogy with underdoped cuprates. The relatively high superconducting critical temperature of twisted bilayer graphene, given such a small Fermi surface (which corresponds to a carrier density of about 10 11 per square centimetre), puts it among the superconductors with the strongest pairing strength between electrons. Twisted bilayer graphene is a precisely tunable, purely carbon-based, two-dimensional superconductor. It is therefore an ideal material for investigations of strongly correlated phenomena, which could lead to insights into the physics of high

The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene.

PubMed

Yang, Ning; Yang, Daoguo; Zhang, Guoqi; Chen, Liangbiao; Liu, Dongjing; Cai, Miao; Fan, Xuejun

2018-02-01

The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P) via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene's structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption.

Chlorine-trapped CVD bilayer graphene for resistive pressure sensor with high detection limit and high sensitivity

NASA Astrophysics Data System (ADS)

Phuong Pham, Viet; Triet Nguyen, Minh; Park, Jin Woo; Kwak, Sung Soo; Nguyen, Dieu Hien Thi; Kyeom Mun, Mu; Danh Phan, Hoang; San Kim, Doo; Kim, Ki Hyun; Lee, Nae-Eung; Yeom, Geun Young

2017-06-01

Pressure sensing is one of the key functions for smart electronics. Considerably more effort is required to achieve the fabrication of pressure sensors that can imitate and overcome the sophisticated pressure sensing characteristics in nature and industry, especially in the innovation of materials and structures. Almost all of the pressure sensors reported until now have a high sensitivity at a low-pressure detection limit (<10 kPa). While the exploration of a pressure sensor with a high sensitivity and a high responsivity at a high-pressure is challenging, it is required for next generation smart electronics. Here, we report an exotic heterostructure pressure sensor based on ZnO/chlorine radical-trap doped bilayer graphene (ZGClG) as an ideal channel for pressure sensors. Using this ZGClG as the channel, this study shows the possibility of forming a pressure sensor with a high sensitivity (0.19 kPa-1) and a high responsivity (0.575 s) at V  =  1 V on glass substrate. Further, the pressure detection limit of this device was as high as 98 kPa. The investigation of the sensing mechanism under pressure has revealed that the significant improved sensing effect is related to the heavy p-type chlorine trap doping in the channel graphene with chlorine radicals without damaging the graphene. This work indicates that the ZGClG channel used for the pressure sensing device could also provide a simple and essential sensing platform for chemical-, medical-, and biological-sensing for future smart electronics.

Fabrication of efficient graphene-doped polymer/fullerene bilayer organic solar cells in air using spin coating followed by ultrasonic vibration post treatment

NASA Astrophysics Data System (ADS)

Zabihi, Fatemeh; Chen, Qianli; Xie, Yu; Eslamian, Morteza

2016-12-01

In this work, in an attempt to improve the performance and lifetime of organic solar cells, P3HT photon absorbing polymer was doped with graphene (G) nano-sheets, to make light harvesting G-P3HT composite thin film. The composite this film was then employed as the donor of a bilayer organic solar cell with the structure of glass/ITO/PEDOT:PSS/G-P3HT/C60/Al. The reference P3HT:PCBM bulk heterojunction solar cell was also fabricated for comparison. All solution-processed layers were made by spin coating in humid air (Shanghai, China); C60 and Al were deposited by thermal evaporation. An effective mechanical treatment approach developed by the authors, i.e. the application of forced ultrasonic vibration on the wet spun-on films, was used to improve the dispersion of graphene in G-P3HT composite films to obtain a uniform nanostructure. This mechanical method eliminates tedious and expensive chemical steps, currently performed to engineer the structure of organic solar cells. It is evidenced that the G-P3HT composite thin films, post treated by ultrasonic vibration at the optimum vibration duration, possess superior electrical conductivity, charge carrier mobility and density, uniform surface potential distribution, and lower surface roughness, compared to those of P3HT and G-P3HT thin films made without vibration. The results show significant improvement in the power conversion efficiency (PCE) of vibration-treated G-P3HT/C60 cell (PCE = 5.17%, the highest reported for this structure), substantiating the strong positive effect of using graphene and forced vibration for the fabrication of P3HT active layer in the bilayer cell structure.

Gate-controlled topological conducting channels in bilayer graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Wang, Ke; McFaul, Kenton J.; Zern, Zachary; Ren, Yafei; Watanabe, Kenji; Taniguchi, Takashi; Qiao, Zhenhua; Zhu, Jun

2016-12-01

The existence of inequivalent valleys K and K‧ in the momentum space of 2D hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, analogous to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene (BLG), the momentum-space Berry curvature Ω carries opposite sign in the K and K‧ valleys. A sign reversal of Ω along an internal boundary of the sheet gives rise to counterpropagating 1D conducting modes encoded with opposite-valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In BLG, the reversal of Ω can occur at the domain wall of AB- and BA-stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations, such as valves and waveguides, but it is technically challenging to realize. Here, we fabricate a dual-split-gate structure in BLG and present evidence of the predicted metallic states in electrical transport. The metallic states possess a mean free path (MFP) of up to a few hundred nanometres in the absence of a magnetic field. The application of a perpendicular magnetic field suppresses the backscattering significantly and enables a junction 400 nm in length to exhibit conductance close to the ballistic limit of 4e2/h at 8 T. Our experiment paves the way to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Few-layer and symmetry-breaking effects on the electrical properties of ordered CF3Cl phases on graphene

NASA Astrophysics Data System (ADS)

Morales-Cifuentes, Josue; Wang, Yilin; Reutt-Robey, Janice; Einstein, T. L.

2014-03-01

An effective pseudopotential mechanism for breaking the inherent sub-lattice symmetry of graphene has been studied using DFT calculations on hexagonal boron nitride. Electrical detection of CF3Cl phase transitions on graphene shows the existence of a commensurate ordered phase in which this can be tested. We study the electronic properties of this phase using VASP ver 5.3.3, with ab initio van der Waals density functionals (vdW-DF1 and vdW-DF2). Consistent with a physisorbed phase, binding energies and charge transfer per CF3Cl molecule are calculated to be on the order of 280meV and 0.01e, respectively. By exploring different coverages and orientations of this ordered phase we are able to open a band gap in some configurations; said gap is in the range of 8 to 80meV depending on the strength of the effective pseudopotential. Furthermore, we calculate the screening of these effects in bi-layer and tri-layer graphene. Work supported by NSF-MRSEC at UMD, grant DMR 05-20471 and NSF-CHE 13-05892.

Structural and electro-optical properties of bilayer graphyne like BN sheet

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2016-12-01

The structural, electronic and optical properties of bilayer graphyne like BN sheet (BNyne) with different stacking manners have been explored by the first-principles calculations. The stabilities of α-BNyne bilayers with different stacking manners are compared. The α-BNyne Bilayers have wide band gaps. Compared to the single α-BNyne, the numbers of energy bands are doubled due to the interlayer interactions and the band gap is reduced. The AB-I configuration has a direct band gap while the band gap becomes indirect for AA-II. The calculated ε2 (ω) of bilayer α-BNyne for (Eǁx) is similar to that of the monolayer α-BNyne, except for the small changes of peak positions and increasing of peak intensities. For (Eǁz), the first absorption peak occures at 3.86 eV, and the prominant peak of monolayer at 9.17 eV becomes broadened. These changes are related to the new transitions resulting from the band splitting.

Electronic Structures, Bonding Configurations, and Band-Gap-Opening Properties of Graphene Binding with Low-Concentration Fluorine

DOE PAGES

Duan, Yuhua; Stinespring, Charter D.; Chorpening, Benjamin

2015-06-18

To better understand the effects of low-level fluorine in graphene-based sensors, first-principles density functional theory (DFT) with van der Waals dispersion interactions has been employed to investigate the structure and impact of fluorine defects on the electrical properties of single-layer graphene films. The results show that both graphite-2H and graphene have zero band gaps. When fluorine bonds to a carbon atom, the carbon atom is pulled slightly above the graphene plane, creating what is referred to as a CF defect. The lowest-binding energy state is found to correspond to two CF defects on nearest neighbor sites, with one fluorine abovemore » the carbon plane and the other below the plane. Overall this has the effect of buckling the graphene. The results further show that the addition of fluorine to graphene leads to the formation of an energy band (BF) near the Fermi level, contributed mainly from the 2p orbitals of fluorine with a small contribution from the porbitals of the carbon. Among the 11 binding configurations studied, our results show that only in two cases does the BF serve as a conduction band and open a band gap of 0.37 eV and 0.24 eV respectively. The binding energy decreases with decreasing fluorine concentration due to the interaction between neighboring fluorine atoms. The obtained results are useful for sensor development and nanoelectronics.« less

The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene

PubMed Central

Yang, Daoguo; Zhang, Guoqi; Chen, Liangbiao; Liu, Dongjing; Cai, Miao; Fan, Xuejun

2018-01-01

The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P) via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene’s structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption. PMID:29389860

A small graphene oxide sheet/polyvinylidene fluoride bilayer actuator with large and rapid responses to multiple stimuli.

PubMed

Xu, Guochuang; Zhang, Miao; Zhou, Qinqin; Chen, Hongwu; Gao, Tiantian; Li, Chun; Shi, Gaoquan

2017-11-16

A high-performance actuator should be able to deliver large-shape deformations, fast actuations and sensitive responses to multiple stimuli. Here, we report such an actuator constructed from one layer of polyvinylidene fluoride (PVDF) with a high coefficient of thermal expansion (CTE), and another layer of small sheets of graphene oxide (SGO) with a negative CTE. The opposite deformations of both actuation layers make the SGO/PVDF bilayer actuator highly sensitive to the temperature stimulus with a large bending sensitivity of 1.5 cm -1 °C -1 . Upon irradiation with 60 mW cm -2 infrared light, this SGO/PVDF bilayer actuator displayed an extremely rapid tip displacement rate of 140 mm s -1 . Furthermore, this actuator can also sensitively respond to moisture because of its SGO layer, showing a curvature change from -22 to 13 cm -1 upon changing the relative humidity (RH) from 11% to 86%. This actuator can generate a contractile or relaxed stress 18 times that of mammalian skeletal muscle, under light irradiation or moisture with a response time as short as 1 s, being capable of lifting an object with a weight 80 times that of itself. Furthermore, it also showed excellent stability and repeatability.

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

2017-09-01

Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene.

PubMed

Crosse, J A; Xu, Xiaodong; Sherwin, Mark S; Liu, R B

2014-09-24

In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron-hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm(-1)), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm(-1) can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron-hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications.

Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene

PubMed Central

Crosse, J. A.; Xu, Xiaodong; Sherwin, Mark S.; Liu, R. B.

2014-01-01

In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron–hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm−1), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm−1 can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron–hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications. PMID:25249245

Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dharmaraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com; Parthiban, S.

We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mAmore » level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.« less

Raman Excitation Profile of the G-band Enhancement in Twisted Bilayer Graphene

NASA Astrophysics Data System (ADS)

Eliel, G. S. N.; Ribeiro, H. B.; Sato, K.; Saito, R.; Lu, Chun-Chieh; Chiu, Po-Wen; Fantini, C.; Righi, A.; Pimenta, M. A.

2017-12-01

A resonant Raman study of twisted bilayer graphene (TBG) samples with different twisting angles using many different laser lines in the visible range is presented. The samples were fabricated by CVD technique and transferred to Si/SiO2 substrates. The Raman excitation profiles of the huge enhancement of the G-band intensity for a group of different TBG flakes were obtained experimentally, and the analysis of the profiles using a theoretical expression for the Raman intensities allowed us to obtain the energies of the van Hove singularities generated by the Moiré patterns and the lifetimes of the excited state of the Raman process. Our results exhibit a good agreement between experimental and calculated energies for van Hove singularities and show that the lifetime of photoexcited carrier does not depend significantly on the twisting angle in the range intermediate angles ( 𝜃 between 10∘ and 15∘). We observed that the width of the resonance window (Γ ≈ 250 meV) is much larger than the REP of the Raman modes of carbon nanotubes, which are also enhanced by resonances with van Hove singularities.

The magneto-optical properties of non-uniform graphene nanoribbons

NASA Astrophysics Data System (ADS)

Chung, Hsien-Ching; Lin, Ming-Fa

2015-03-01

When synthesizing few-layer graphene nanoribbons (GNRs), non-uniform GNRs would be made simultaneously. Recently, the non-uniform GNRs, which is a stack of two GNRs with unequal widths, have been fabricated by mechanically exfoliated from bulk graphite. Some theoretical predictions have been reported, such as gap opening and transport properties. Under the influence of magnetic fields, magnetic quantization takes place and drastically changes the electronic properties. By tuning the geometric configuration, four categories of magneto-electronic spectra are exhibited. (1) The spectrum is mostly contributed by quasi-Landau levels (QLLs) of monolayer GNRs. (2) The spectrum displays two groups of QLLs, and the non-uniform GNR behaves like a bilayer one. (3) An intermediate category, the spectrum is composite disordered. (4) The spectrum presents the coexistence of monolayer and bilayer spectra. In this work, the magneto-electronic and optical properties for different geometric configurations are given, such as energy dispersions, density of states, wave functions, and magneto-absorption spectra are presented. Furthermore, the transformation between monolayer and bilayer spectra as well as the coexistence of monolayer and bilayer spectra are discussed in detail. One of us (Hsien-Ching Chung) thanks Ming-Hui Chung and Su-Ming Chen for financial support. This work was supported in part by the National Science Council of Taiwan under Grant Number 98-2112-M-006-013-MY4.

Single-crystalline monolayer and multilayer graphene nano switches

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-03-01

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

Single-crystalline monolayer and multilayer graphene nano switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Peng; Cui, Tianhong, E-mail: tcui@me.umn.edu; Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

2014-03-17

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

Green synthesis of low-toxicity graphene-fulvic acid with an open band gap enhances demethylation of methylmercury.

PubMed

Hu, Xiangang; Mu, Li; Lu, Kaicheng; Kang, Jia; Zhou, Qixing

2014-06-25

The demethylation of methylmercury has received substantial attention. Here, a novel chemical method for the demethylation of methylmercury is proposed. The low-toxicity graphene-fulvic acid (FA, a ubiquitous material in the environment) was synthesized without the use of a chemical reagent. The hybridized graphene-FA presented an indirect open band gap of 2.25-2.87 eV as well as adequate aqueous dispersion. More importantly, the hybridized graphene-FA exhibited 6- and 10-fold higher photocatalytic efficiencies for the demethylation of methylmercury than FA and free FA with graphene, respectively. This result implies that immobilized, rather than free, FA accelerated the catalysis. Furthermore, inorganic mercuric ion, elemental mercury, and mercuric oxide were identified as the primary demethylation products. For free FA with graphene, graphene quenches the excited-state FA, inhibiting the demethylation by electron transfer. In contrast, the graphene of the self-assembled graphene-FA serves as an electron reservoir, causing electron-hole pair separation. Graphene-FA showed a negligible toxicity toward microalgae compared to graphene. The above results reveal that the green synthesis of graphene and organic molecules is a convenient strategy for obtaining effective cocatalysts.

Modulating the band gap of a boron nitride bilayer with an external electric field for photocatalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Y. R.; Cao, J. X., E-mail: jxcao@xtu.edu.cn; Zhang, Y.

2016-05-21

By virtue of first principle calculations, we propose an approach to reduce the band gap of layered semiconductors through the application of external electric fields for photocatalysis. As a typical example, the band gap of a boron nitride (BN) bilayer was reduced in the range from 4.45 eV to 0.3 eV by varying the external electric field strength. More interestingly, it is found that the uppermost valence band and the lowest conduction band are dominated by the N-p{sub z} and B-p{sub z} from different layers of the BN sheet, which suggests a wonderful photoexcited electron and hole separation system for photocatalysis. Ourmore » results imply that the strong external electric field can present an abrupt polarized surface.« less

Inter-layer and intra-layer heat transfer in bilayer/monolayer graphene van der Waals heterostructure: Is there a Kapitza resistance analogous?

NASA Astrophysics Data System (ADS)

Rajabpour, Ali; Fan, Zheyong; Vaez Allaei, S. Mehdi

2018-06-01

Van der Waals heterostructures have exhibited interesting physical properties. In this paper, heat transfer in hybrid coplanar bilayer/monolayer (BL-ML) graphene, as a model layered van der Waals heterostructure, was studied using non-equilibrium molecular dynamics (MD) simulations. The temperature profile and inter- and intra-layer heat fluxes of the BL-ML graphene indicated that, there is no fully developed thermal equilibrium between layers and the drop in the average temperature profile at the step-like BL-ML interface is not attributable to the effect of Kapitza resistance. By increasing the length of the system up to 1 μm in the studied MD simulations, the thermally non-equilibrium region was reduced to a small area near the step-like interface. All MD results were compared to a continuum model and a good match was observed between the two approaches. Our results provide a useful understanding of heat transfer in nano- and micro-scale layered materials and van der Waals heterostructures.

Spin-Dependent Phenomena in Graphene

DTIC Science & Technology

2012-03-15

scattering on spin relaxation: By investigating the effect of gold dopants on spin transport, we concluded that charged impurity scattering is not...transport in graphene spin valves consisting of an ultrathin sheet of graphene (single or bilayer) contacted by ferromagnetic cobalt electrodes...workfunction cannot explain the observed behavior. The second effect was that the mobility was reduced by the transition metal dopants , as indicated by

Chirality effect on electron phonon relaxation, energy loss, and thermopower in single and bilayer graphene in BG regime

NASA Astrophysics Data System (ADS)

Ansari, Meenhaz; Ashraf, S. S. Z.

2017-10-01

We investigate the energy dependent electron-phonon relaxation rate, energy loss rate, and phonon drag thermopower in single layer graphene (SLG) and bilayer graphene (BLG) under the Bloch-Gruneisen (BG) regime through coupling to acoustic phonons interacting via the Deformation potential in the Boltzmann transport equation approach. We find that the consideration of the chiral nature of electrons alters the temperature dependencies in two-dimensional structures of SLG and BLG from that shown by other conventional 2DEG system. Our investigations indicate that the BG analytical results are valid for temperatures far below the BG limit (˜TBG/4) which is in conformity with a recent experimental investigation for SLG [C. B. McKitterick et al., Phys. Rev. B 93, 075410 (2016)]. For temperatures above this renewed limit (˜TBG/4), there is observed a suppression in energy loss rate and thermo power in SLG, but enhancement is observed in relaxation rate and thermopower in BLG, while a suppression in the energy loss rate is observed in BLG. This strong nonmonotonic temperature dependence in SLG has also been experimentally observed within the BG limit [Q. Ma et al., Phys. Rev. Lett. 112, 247401 (2014)].

Electronic spectrum of trilayer graphene

NASA Astrophysics Data System (ADS)

Kumar, S.; Ajay

2014-08-01

Present work deals with the analysis of the single particle electronic spectral function in trilayer (ABC-, ABA- and AAA-stacked) graphene. Tight binding Hamiltonian containing intralayer nearest-neighbor and next-nearest neighbor hopping along-with the interlayer coupling parameter within two triangular sub-lattice approach for trilayer graphene has been employed. The expression of single particle spectral functions A(kw) is obtained within mean-field Green's function equations of motion approach. Spectral function at Γ, M and K points of the Brillouin zone has been numerically computed. It is pointed out that the nature of electronic states at different points of Brillouin zone is found to be influenced by stacking order and Coulomb interactions. At Γ and M points, a trilayer splitting is predicted while at K point a bilayer splitting effect is observed due to crossing of two bands (at K point). Interlayer coupling ( t_{ bot } ) is found to be responsible for the splitting of quasi-particle peaks at each point of Brillouin zone. The influence of t_{ bot } in trilayer graphene is prominent for AAA-stacking compared to ABC- and ABA-stacking. On the other hand, onsite Coulomb interaction reduces the trilayer splitting effect into bilayer splitting at Γ and M points of Brillouin zone and bilayer splitting into single peak spectral function at K point with a shifting of the peak away from Fermi level.

Metal-assisted exfoliation (MAE): green process for transferring graphene to flexible substrates and templating of sub-nanometer plasmonic gaps (Presentation Recording)

NASA Astrophysics Data System (ADS)

Zaretski, Aliaksandr V.; Marin, Brandon C.; Moetazedi, Herad; Dill, Tyler J.; Jibril, Liban; Kong, Casey; Tao, Andrea R.; Lipomi, Darren J.

2015-09-01

This paper describes a new technique, termed "metal-assisted exfoliation," for the scalable transfer of graphene from catalytic copper foils to flexible polymeric supports. The process is amenable to roll-to-roll manufacturing, and the copper substrate can be recycled. We then demonstrate the use of single-layer graphene as a template for the formation of sub-nanometer plasmonic gaps using a scalable fabrication process called "nanoskiving." These gaps are formed between parallel gold nanowires in a process that first produces three-layer thin films with the architecture gold/single-layer graphene/gold, and then sections the composite films with an ultramicrotome. The structures produced can be treated as two gold nanowires separated along their entire lengths by an atomically thin graphene nanoribbon. Oxygen plasma etches the sandwiched graphene to a finite depth; this action produces a sub-nanometer gap near the top surface of the junction between the wires that is capable of supporting highly confined optical fields. The confinement of light is confirmed by surface-enhanced Raman spectroscopy measurements, which indicate that the enhancement of the electric field arises from the junction between the gold nanowires. These experiments demonstrate nanoskiving as a unique and easy-to-implement fabrication technique that is capable of forming sub-nanometer plasmonic gaps between parallel metallic nanostructures over long, macroscopic distances. These structures could be valuable for fundamental investigations as well as applications in plasmonics and molecular electronics.

Two-dimensional wide-band-gap II-V semiconductors with a dilated graphene-like structure

NASA Astrophysics Data System (ADS)

Zhang, Xue-Jing; Liu, Bang-Gui

2016-12-01

Since the advent of graphene, two-dimensional (2D) materials have become very attractive and there is growing interest in exploring new 2D materials beyond graphene. Here, through density-functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M3X2 (M = Zn, Cd and X = N, P, As) with a dilated graphene-like honeycomb structure. In this structure the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. Our DFT calculation shows that 2D Zn3N2, Zn3P2 and Zn3As2 have direct band gaps of 2.87, 3.81 and 3.55 eV, respectively, and 2D Cd3N2, Cd3P2 and Cd3As2 exhibit indirect band gaps of 2.74, 3.51 and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to 0.03m 0-0.05m 0. The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

Graphite, graphene and the flat band superconductivity

NASA Astrophysics Data System (ADS)

Volovik, G. E.

2018-04-01

Superconductivity has been observed in bilayer graphene [1,2]. The main factor, which determines the mechanism of the formation of this superconductivity is the "magic angle" of twist of two graphene layers, at which the electronic band structure becomes nearly flat. The specific role played by twist and by the band flattening, has been earlier suggested for explanations of the signatures of room-temperature superconductivity observed in the highly oriented pyrolytic graphite (HOPG), when the quasi two-dimensional interfaces between the twisted domains are present. The interface contains the periodic array of misfit dislocations (analogs of the boundaries of the unit cell of the Moire superlattice in bilayer graphene), which provide the possible source of the flat band. This demonstrates that it is high time for combination of the theoretical and experimental efforts in order to reach the reproducible room-temperature superconductivity in graphite or in similar real or artificial materials.

Unconventional superconductivity in magic-angle graphene superlattices

NASA Astrophysics Data System (ADS)

Cao, Yuan; Fatemi, Valla; Fang, Shiang; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Jarillo-Herrero, Pablo

2018-04-01

The behaviour of strongly correlated materials, and in particular unconventional superconductors, has been studied extensively for decades, but is still not well understood. This lack of theoretical understanding has motivated the development of experimental techniques for studying such behaviour, such as using ultracold atom lattices to simulate quantum materials. Here we report the realization of intrinsic unconventional superconductivity—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle. For twist angles of about 1.1°—the first ‘magic’ angle—the electronic band structure of this ‘twisted bilayer graphene’ exhibits flat bands near zero Fermi energy, resulting in correlated insulating states at half-filling. Upon electrostatic doping of the material away from these correlated insulating states, we observe tunable zero-resistance states with a critical temperature of up to 1.7 kelvin. The temperature–carrier-density phase diagram of twisted bilayer graphene is similar to that of copper oxides (or cuprates), and includes dome-shaped regions that correspond to superconductivity. Moreover, quantum oscillations in the longitudinal resistance of the material indicate the presence of small Fermi surfaces near the correlated insulating states, in analogy with underdoped cuprates. The relatively high superconducting critical temperature of twisted bilayer graphene, given such a small Fermi surface (which corresponds to a carrier density of about 1011 per square centimetre), puts it among the superconductors with the strongest pairing strength between electrons. Twisted bilayer graphene is a precisely tunable, purely carbon-based, two-dimensional superconductor. It is therefore an ideal material for investigations of strongly correlated phenomena, which could lead to insights into the physics of high

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

NASA Astrophysics Data System (ADS)

Shimazaki, Y.; Yamamoto, M.; Borzenets, I. V.; Watanabe, K.; Taniguchi, T.; Tarucha, S.

2015-12-01

The field of `Valleytronics’ has recently been attracting growing interest as a promising concept for the next generation electronics, because non-dissipative pure valley currents with no accompanying net charge flow can be manipulated for computational use, akin to pure spin currents. Valley is a quantum number defined in an electronic system whose energy bands contain energetically degenerate but non-equivalent local minima (conduction band) or maxima (valence band) due to a certain crystal structure. Specifically, spatial inversion symmetry broken two-dimensional honeycomb lattice systems exhibiting Berry curvature is a subset of possible systems that enable optical, magnetic and electrical control of the valley degree of freedom. Here we use dual-gated bilayer graphene to electrically induce and control broken inversion symmetry (or Berry curvature) as well as the carrier density for generating and detecting the pure valley current. In the insulating regime, at zero-magnetic field, we observe a large nonlocal resistance that scales cubically with the local resistivity, which is evidence of pure valley current.

Band gap modulation of mono and bi-layer hexagonal ZnS under transverse electric field and bi-axial strain: A first principles study

NASA Astrophysics Data System (ADS)

Rai, D. P.; Kaur, Sumandeep; Srivastava, Sunita

2018-02-01

Density functional theory has been employed to study the electronic and mechanical properties of the monolayer and bilayer ZnS. AB stacked ZnS bilayer is found to be energetically more favorable over the AA stacked ZnS bilayer. The electronic bandgap decreases on moving from monolayer to bilayer. Application of positive transverse electric field in AA/AB stacked bilayers leads to a semiconductor to metal transition at 1.10 V/Å. Reversed polarity of electric field, on the other hand, leads to an asymmetric behavior of the bandgap for AB stacking while the behavior of the bandgap in AA stacking is polarity independent. The strong dependency of bandgap on polarity of electric field in AB stacked ZnS bilayer is due to the balancing of external field with the induced internal field which arises due the electronegativity and heterogeneity in the arrangements of atoms. The electronic structure varies with the variation of applied biaxial strain (compression/tensile). We report an increase in band gap in both single and double layers under compression up to -8.0%, which can be attributed to greater superposition of atomic orbitals (Zn-d and S-p hybridization). We expect that our results may stimulate more theoretical and experimental work on hexagonal multi-layers of ZnS employing external field (temperature, pressure, field etc.) for future applications of our present work.

Critical behavior of reduced QED4 ,3 and dynamical fermion gap generation in graphene

NASA Astrophysics Data System (ADS)

Kotikov, A. V.; Teber, S.

2016-12-01

The dynamical generation of a fermion gap in graphene is studied at the infra-red Lorentz-invariant fixed point where the system is described by an effective relativistic-like field theory: reduced QED4 ,3 with N four-component fermions (N =2 for graphene), where photons are (3 +1 ) dimensional and mediate a fully retarded interaction among (2 +1 )-dimensional fermions. A correspondence between reduced QED4 ,3 and QED3 allows us to derive an exact gap equation for QED4 ,3 up to next-to-leading order. Our results show that a dynamical gap is generated for α >αc, where 1.03 <αc<1.08 in the case N =2 or for N

Electronic Properties of Suspended Few-Layer Graphene Membranes

NASA Astrophysics Data System (ADS)

Myhro, Kevin Scott

Graphene, the two-dimensional (2D) honeycomb lattice of sp2-hybrized carbon atoms, has emerged as a "wonder" material with unique properties, such as its linear energy dispersion with massless Dirac fermions, so-called half-integer quantum Hall (QH) effect, unparalleled tensile strength, and high optical transparency and thermal conductivity. Its few-layer counterparts have similar mechanical but remarkably different electrical properties, including layer- and stacking-dependent band structures, massive charge carriers, and energy gaps that may arise from single particle effect as well as electronic interactions. This dissertation reports my six year study of dual-gated suspended few-layer graphene (FLG) field effect transistor (FET) devices. In particular, we focus on their electronic transport properties at low temperature as a function of out-of-plane electric field E⊥ and interlayer potential U⊥, charge carrier density n, temperature T, and out-of-plane (B ⊥) and parallel (B∥) magnetic fields. A number of broken symmetry states in the absence and presence of external fields are observed in rhombohedral-stacked bilayer- (BLG), trilayer- (r-TLG), and tetralayer graphene (r-4LG). We also study the morphological deformation of suspended graphene membranes under electrostatic and thermal manipulation, which is relevant for analyzing low temperature transport data. In particular, in BLG, r-TLG and r-4LG, we observe intrinsic insulating states in the absence of external fields, with energy gaps of 2, 40, and 80 meV, respectively. We attribute this increasing gap size with number of layers N to enhanced electronic-interactions near the charge neutrality point, due to the layer-dependent energy dispersions kN in r-FLG, which give rise to increasingly diverging density of states and interaction strength with increasing N, at least up to four layers. Our observations of the spontaneous insulating state in r-FLG are consistent with a layer antiferromagnetic state

Origin of band gaps in graphene on hexagonal boron nitride

PubMed Central

Jung, Jeil; DaSilva, Ashley M.; MacDonald, Allan H.; Adam, Shaffique

2015-01-01

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene’s carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy π-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions. PMID:25695638

Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

NASA Astrophysics Data System (ADS)

E, Lotfi; H, Rezania; B, Arghavaninia; M, Yarmohammadi

2016-07-01

We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength.

Utilizing Interlayer Excitons in Bilayer WS2 for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors.

PubMed

Zhou, Yingqiu; Tan, Haijie; Sheng, Yuewen; Fan, Ye; Xu, Wenshuo; Warner, Jamie H

2018-04-19

Here we study the layer-dependent photoconductivity in Gr/WS 2 /Gr vertical stacked tunneling (VST) cross-bar devices made using two-dimensional (2D) materials all grown by chemical vapor deposition. The larger number of devices (>100) enables a statistically robust analysis on the comparative differences in the photovoltaic response of monolayer and bilayer WS 2 , which cannot be achieved in small batch devices made using mechanically exfoliated materials. We show a dramatic increase in photovoltaic response for Gr/WS 2 (2L)/Gr compared to monolayers because of the long inter- and intralayer exciton lifetimes and the small exciton binding energy (both interlayer and intralayer excitons) of bilayer WS 2 compared with that of monolayer WS 2 . Different doping levels and dielectric environments of top and bottom graphene electrodes result in a potential difference across a ∼1 nm vertical device, which gives rise to large electric fields perpendicular to the WS 2 layers that cause band structure modification. Our results show how precise control over layer number in all 2D VST devices dictates the photophysics and performance for photosensing applications.

Nanoplasmonic Phenomena at Electronic Boundaries in Graphene

DOE PAGES

Fei, Zhe; Ni, Guang -Xin; Jiang, Bor -Yuan; ...

2017-06-30

Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlyingmore » physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.« less

Nanoplasmonic Phenomena at Electronic Boundaries in Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fei, Zhe; Ni, Guang -Xin; Jiang, Bor -Yuan

Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlyingmore » physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.« less

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

NASA Astrophysics Data System (ADS)

Goswami, Partha

2018-03-01

We calculate the electronic band dispersion of graphene monolayer on a two-dimensional transition metal dichalcogenide substrate (GrTMD) around K and K^' } points by taking into account the interplay of the ferromagnetic impurities and the substrate-induced interactions. The latter are (strongly enhanced) intrinsic spin-orbit interaction (SOI), the extrinsic Rashba spin-orbit interaction (RSOI) and the one related to the transfer of the electronic charge from graphene to substrate. We introduce exchange field ( M) in the Hamiltonian to take into account the deposition of magnetic impurities on the graphene surface. The cavalcade of the perturbations yield particle-hole symmetric band dispersion with an effective Zeeman field due to the interplay of the substrate-induced interactions with RSOI as the prime player. Our graphical analysis with extremely low-lying states strongly suggests the following: The GrTMDs, such as graphene on WY2, exhibit (direct) band-gap narrowing / widening (Moss-Burstein (MB) gap shift) including the increase in spin polarisation ( P) at low temperature due to the increase in the exchange field ( M) at the Dirac points. The polarisation is found to be electric field tunable as well. Finally, there is anticrossing of non-parabolic bands with opposite spins, the gap closing with same spins, etc. around the Dirac points. A direct electric field control of magnetism at the nanoscale is needed here. The magnetic multiferroics, like BiFeO3 (BFO), are useful for this purpose due to the coupling between the magnetic and electric order parameters.

Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shan; Cui, Liyong; Liu, Fen

We have theoretically investigated the electronic resonant tunneling effect in graphene superlattice heterostructures, where a tunable graphene layer is inserted between two different superlattices. It is found that a complete tunneling state appears inside the enlarged forbidden gap of the heterostructure by changing the thickness of the inserted graphene layer and the transmittance of the tunneling state depends on the thickness of the inserted layer. Furthermore, the frequency of the tunneling state changes with the thickness of the inserted graphene layer but it always located in the little overlapped forbidden gap of two graphene superlattices. Therefore, both a perfect tunnelingmore » state and an ultrawide forbidden gap are realized in such heterostrutures. Since maximum probability densities of the perfect tunneling state are highly localized near the interface between the inserted graphene layer and one graphene superlattice, it can be named as an interface-like state. Such structures are important to fabricate high-Q narrowband electron wave filters.« less

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

NASA Astrophysics Data System (ADS)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Graphene growth with ‘no’ feedstock

NASA Astrophysics Data System (ADS)

Qing, Fangzhu; Jia, Ruitao; Li, Bao-Wen; Liu, Chunlin; Li, Congzhou; Peng, Bo; Deng, Longjiang; Zhang, Wanli; Li, Yanrong; Ruoff, Rodney S.; Li, Xuesong

2017-06-01

Synthesis of graphene by chemical vapor deposition (CVD) from hydrocarbons on Cu foil substrates can yield high quality and large area graphene films. In a typical CVD process, a hydrocarbon in the gas phase is introduced for graphene growth and hydrogen is usually required to achieve high quality graphene. We have found that in a low pressure CVD system equipped with an oil mechanical vacuum pump located downstream, graphene can be grown without deliberate introduction of a carbon feedstock but with only trace amounts of C present in the system, the origin of which we attribute to the vapor of the pump oil. This finding may help to rationalize the differences in graphene growth reported by different research groups. It should also help to gain an in-depth understanding of graphene growth mechanisms with the aim to improve the reproducibility and structure control in graphene synthesis, e.g. the formation of large area single crystal graphene and uniform bilayer graphene.

Electronic structure and optical properties of twisted bilayer graphene calculated via time evolution of states in real space

NASA Astrophysics Data System (ADS)

Le, H. Anh; Do, V. Nam

2018-03-01

We investigate the electronic and optical properties of twisted bilayer graphene with arbitrary twist angles θ . Our results are based on a method of evolving in time quantum states in lattice space. We propose an efficient scheme of sampling lattice nodes that helps to reduce significantly computational cost, particularly for tiny twist angles. We demonstrate the continuous variation of the density of states and the optical conductivity with respect to the twist angle. It indicates that the commensurability between the two graphene layers does not play an essential role in governing the electronic and optical properties. We point out that, for the twist angles roughly in the range 0 .1∘<θ <3∘ , the density of states in the vicinity of the Fermi energy exhibits the typical W shape with a small peak locating at the Fermi energy. This peak is formed as the merging of two van Hove peaks and reflects the appearance of states strongly localized in the AA-like region of moiré zones. When decreasing the twist angle to zero, the W shape is gradually transformed to the U shape, which is seen as the behavior of the density of states in the limit of θ →0∘ .

How graphene slides: measurement and theory of strain-dependent frictional forces between graphene and SiO2.

PubMed

Kitt, Alexander L; Qi, Zenan; Rémi, Sebastian; Park, Harold S; Swan, Anna K; Goldberg, Bennett B

2013-06-12

Strain, bending rigidity, and adhesion are interwoven in determining how graphene responds when pulled across a substrate. Using Raman spectroscopy of circular, graphene-sealed microchambers under variable external pressure, we demonstrate that graphene is not firmly anchored to the substrate when pulled. Instead, as the suspended graphene is pushed into the chamber under pressure, the supported graphene outside the microchamber is stretched and slides, pulling in an annulus. Analyzing Raman G band line scans with a continuum model extended to include sliding, we extract the pressure dependent sliding friction between the SiO2 substrate and mono-, bi-, and trilayer graphene. The sliding friction for trilayer graphene is directly proportional to the applied load, but the friction for monolayer and bilayer graphene is inversely proportional to the strain in the graphene, which is in violation of Amontons' law. We attribute this behavior to the high surface conformation enabled by the low bending rigidity and strong adhesion of few layer graphene.

Tetragonal bismuth bilayer: A stable and robust quantum spin hall insulator

DOE PAGES

Kou, Liangzhi; Tan, Xin; Ma, Yandong; ...

2015-11-23

In this study, topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations reveal a band inversion among the Bi-p orbits driven by the strong intrinsic spin–orbit coupling, producing a largemore » nontrivial band gap, which can be effectively tuned by moderate strains. The helical gapless edge states exhibit a linear dispersion with a high Fermi velocity comparable to that of graphene, and the QSH phase remains robust on a NaCl substrate. These remarkable properties place TB-Bi among the most promising 2D TIs for high-speed spintronic devices, and the present results provide insights into the intriguing QSH phenomenon in this new Bi structure and offer guidance for its implementation in potential applications.« less

Phosphorene for energy and catalytic application—filling the gap between graphene and 2D metal chalcogenides

NASA Astrophysics Data System (ADS)

Jain, Rishabh; Narayan, Rekha; Padmajan Sasikala, Suchithra; Lee, Kyung Eun; Jung, Hong Ju; Ouk Kim, Sang

2017-12-01

Phosphorene, a newly emerging graphene analogous 2D elemental material of phosphorous atoms, is unique on the grounds of its natural direct band gap opening, highly anisotropic and extraordinary physical properties. This review highlights the current status of phosphorene research in energy and catalytic applications. The initial part illustrates the typical physical properties of phosphorene, which successfully bridge the prolonged gap between graphene and 2D metal chalcogenides. Various synthetic methods available for black phosphorus (BP) and the exfoliation/growth techniques for single to few-layer phosphorene are also overviewed. The latter part of this review details the working mechanisms and performances of phosphorene/BP in batteries, supercapacitors, photocatalysis, and electrocatalysis. Special attention has been paid to the research efforts to overcome the inherent shortcomings faced by phosphorene based devices. The relevant device performances are compared with graphene and 2D metal chalcogenides based counterparts. Furthermore, the underlying mechanism behind the unstable nature of phosphorene under ambient condition is discussed along with the various approaches to avoid ambient degradation. Finally, comments are offered for the future prospective explorations and outlook as well as challenges lying in the road ahead for phosphorene research.

van der Waals Heterostructures with High Accuracy Rotational Alignment.

PubMed

Kim, Kyounghwan; Yankowitz, Matthew; Fallahazad, Babak; Kang, Sangwoo; Movva, Hema C P; Huang, Shengqiang; Larentis, Stefano; Corbet, Chris M; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; LeRoy, Brian J; Tutuc, Emanuel

2016-03-09

We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.

Commensurability condition and hierarchy of fillings for FQHE in higher Landau levels in conventional 2DEG systems and in graphene—monolayer and bilayer

NASA Astrophysics Data System (ADS)

Jacak, Janusz; Jacak, Lucjan

2016-01-01

The structure of the filling rate hierarchy referred to as the fractional quantum Hall effect is studied in higher Landau levels using the commensurability condition. The hierarchy of fillings that are derived in this manner is consistent with the experimental observations of the first three Landau levels in conventional semiconductor Hall systems. The relative poverty of the fractional structure in higher Landau levels compared with the lowest Landau level is explained using commensurability topological arguments. The commensurability criterion for correlated states for higher Landau levels (with n≥slant 1) including the paired states at half fillings of the spin-subbands of these levels is formulated. The commensurability condition is applied to determine the hierarchy of the fractional fillings of Landau levels in the monolayer and bilayer graphene. Good agreement with current experimental observations of fractional quantum Hall effect in the graphene monolayer and bilayer is achieved. The presence of even denominator rates in the hierarchy for fractional quantum Hall effect in the bilayer graphene is also explained.

Atomistic Simulations of Graphene Growth: From Kinetics to Mechanism.

PubMed

Qiu, Zongyang; Li, Pai; Li, Zhenyu; Yang, Jinlong

2018-03-20

Epitaxial growth is a promising strategy to produce high-quality graphene samples. At the same time, this method has great flexibility for industrial scale-up. To optimize growth protocols, it is essential to understand the underlying growth mechanisms. This is, however, very challenging, as the growth process is complicated and involves many elementary steps. Experimentally, atomic-scale in situ characterization methods are generally not feasible at the high temperature of graphene growth. Therefore, kinetics is the main experimental information to study growth mechanisms. Theoretically, first-principles calculations routinely provide atomic structures and energetics but have a stringent limit on the accessible spatial and time scales. Such gap between experiment and theory can be bridged by atomistic simulations using first-principles atomic details as input and providing the overall growth kinetics, which can be directly compared with experiment, as output. Typically, system-specific approximations should be applied to make such simulations computationally feasible. By feeding kinetic Monte Carlo (kMC) simulations with first-principles parameters, we can directly simulate the graphene growth process and thus understand the growth mechanisms. Our simulations suggest that the carbon dimer is the dominant feeding species in the epitaxial growth of graphene on both Cu(111) and Cu(100) surfaces, which enables us to understand why the reaction is diffusion limited on Cu(111) but attachment limited on Cu(100). When hydrogen is explicitly considered in the simulation, the central role hydrogen plays in graphene growth is revealed, which solves the long-standing puzzle into why H 2 should be fed in the chemical vapor deposition of graphene. The simulation results can be directly compared with the experimental kinetic data, if available. Our kMC simulations reproduce the experimentally observed quintic-like behavior of graphene growth on Ir(111). By checking the

Theoretical study on strain induced variations in electronic properties of 2H-MoS{sub 2} bilayer sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Liang; Dongare, Avinash M., E-mail: dongare@uconn.edu; Namburu, Raju R.

2014-02-03

The strain dependence of the electronic properties of bilayer sheets of 2H-MoS{sub 2} is studied using ab initio simulations based on density functional theory. An indirect band gap for bilayer MoS{sub 2} is observed for all variations of strain along the basal plane. Several transitions for the indirect band gap are observed for various strains for the bilayer structure. The variation of the band gap and the carrier effective masses for the holes and the electrons for the bilayer MoS{sub 2} structure under conditions of uniaxial strain, biaxial strain, as well as uniaxial stress is investigated.

Anharmonicities in phonon combinations and overtones in bilayered graphene: A temperature-dependent approach

NASA Astrophysics Data System (ADS)

Araujo, P. T.

2018-05-01

This paper studies phonon anharmonicities related to the phonon combination LOZO' and phonon overtone 2ZO in a A B -stacked bilayer graphene (2LG). The results explain in detail the rule of the ZO' layer breathing mode in the 2LG electron and phonon relaxations, especially at temperatures above 543 K, where anomalous behaviors are observed for the LOZO' frequencies, linewidths (and therefore, lifetimes), and integrated areas. Surprisingly, the 2ZO frequencies and linewidths do not show any dependence with temperature (ZO is the out-of-phase vibration of the layers). This result is explained via nonsymmetric lattice distortions and via the almost null Gr üneisen parameter associated to the ZO mode. Recently, the correct assignments for the phonon combination and overtone modes studied here have been put in debate once again in a theoretical work by Popov [Carbon 91, 436 (2015), 10.1016/j.carbon.2015.05.020]. This work shows how temperature-dependent Raman spectroscopy is used to propose a solution for these recent assignment problems. Finally, although 2LG is the system used here, the measurements and discussions to approach electron and phonon relaxations have the potential to be extended to any other multilayered structure that presents ZO'- and ZO-like phonon modes.

Biological Response of Osteoblastic and Chondrogenic Cells to Graphene-Containing PCL/Bioactive Glass Bilayered Scaffolds for Osteochondral Tissue Engineering Applications.

PubMed

Deliormanlı, Aylin M; Atmaca, Harika

2018-05-25

Graphene-containing 13-93 bioactive glass and poly(ε-caprolactone)-based bilayer, electrically conductive scaffolds were prepared for osteochondral tissue repair. Biological response of osteoblastic MC3T3-E1 and chondrogenic ATDC5 cells to the composite scaffolds was assessed under mono-culture and co-culture conditions. Cytotoxicity was investigated using MTT assay, cartilage matrix production was evaluated by Alcian blue staining, and mineralization of both types of cells in the different culture systems was observed by Alizarin red S staining. Results showed that osteoblastic and chondrogenic cells utilized in the study did not show toxic response to the prepared scaffolds under mono-culture conditions and higher cell viability rates were obtained in co-culture conditions. Larger mineralized areas were determined under co-culture conditions and calcium deposition amount significantly increased compared with that in control group samples after 21 days. Additionally, the amount of glycosaminoglycans synthesized in co-culture was higher compared to mono-culture conditions. Electric stimulation applied under mono-culture conditions suppressed the viability of MC3T3-E1 cells whereas it enhanced the viability rates of ATDC5 cells. The study suggests that the designed bilayered osteochondral constructs have the potential for osteochondral defect repair.

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

DOE PAGES

Goldflam, Michael D.; Fei, Zhe; Ruiz, Isaac; ...

2017-05-18

Here, we have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. Our simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength andmore » wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.« less

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, Michael D.; Fei, Zhe; Ruiz, Isaac

Here, we have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. Our simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength andmore » wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.« less

Chemical Vapor Deposition Synthesis of Graphene-Based Materials and Chemical Modulation of Graphene Electronics

NASA Astrophysics Data System (ADS)

Yan, Zheng

Graphene, a two-dimensional sp2-bonded carbon material, has attracted enormous attention due to its excellent electrical, optical and mechanical properties. Recently developed chemical vapor deposition (CVD) methods could produce large-size and uniform polycrystalline graphene films, limited to gas carbon sources, metal catalyst substrates and degraded properties induced by grain boundaries. Meanwhile, pristine monolayer graphene exhibits a standard ambipolar behavior with a zero neutrality point in field-effect transistors (FETs), limiting its future electronic applications. This thesis starts with the investigation of CVD synthesis of pristine and N-doped graphene with controlled thickness using solid carbon sources on metal catalyst substrates (chapter 1), and then discusses the direct growth of bilayer graphene on insulating substrates, including SiO2, h-BN, Si3N4 and Al2O3, without needing further transfer-process (chapter 2). Chapter 3 discusses the synthesis of high-quality graphene single crystals and hexagonal onion-ring-like graphene domains, and also explores the basic growth mechanism of graphene on Cu substrates. To extend graphene's potential applications, both vertical and planar graphene-carbon nanotube hybrids are fabricated using CVD method and their interesting properties are investigated (chapter 4). Chapter 5 discusses how to use chemical methods to modulate graphene's electronic behaviors.

Effect of a gap opening on the conductance of graphene with magnetic barrier structures

NASA Astrophysics Data System (ADS)

Esmailpour, Mohammad

2018-04-01

In the present study Klein tunneling in a single-layer gapped graphene was investigated by transfer matrix method under normal magnetic field for one and two magnetic barriers. Calculations show that electron transmission through a magnetic barrier is deflected to positive angles and reduces as the magnitude of magnetic field and especially the energy gap increases. This reduction is even more significant in larger fields so that after reaching a specific value of energy gap, an effective confinement for fermions and suppression of Klein tunneling is reached particularly in normal incidence and the conductance becomes zero. Unlike one barrier, the process of tunneling through two magnetic barriers induces symmetric transmission probability versus the incident angle; even, for lower energy gaps, electron transmission probability increases which in turn reduces total conductance via proper changes in the value of the magnetic field and energy gap. In general, it is concluded that confining electrons in asymmetric transmission through one barrier is conducted better than two barriers.

Infrared spectroscopy of wafer-scale graphene.

PubMed

Yan, Hugen; Xia, Fengnian; Zhu, Wenjuan; Freitag, Marcus; Dimitrakopoulos, Christos; Bol, Ageeth A; Tulevski, George; Avouris, Phaedon

2011-12-27

We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 μm (40 cm(-1)) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

Non-Abelian Parton Fractional Quantum Hall Effect in Multilayer Graphene.

PubMed

Wu, Ying-Hai; Shi, Tao; Jain, Jainendra K

2017-08-09

The current proposals for producing non-Abelian anyons and Majorana particles, which are neither fermions nor bosons, are primarily based on the realization of topological superconductivity in two dimensions. We show theoretically that the unique Landau level structure of bilayer graphene provides a new possible avenue for achieving such exotic particles. Specifically, we demonstrate the feasibility of a "parton" fractional quantum Hall (FQH) state, which supports non-Abelian particles without the usual topological superconductivity. Furthermore, we advance this state as the fundamental explanation of the puzzling 1/2 FQH effect observed in bilayer graphene [ Kim et al. Nano Lett. 2015 , 15 , 7445 ] and predict that it will also occur in trilayer graphene. We indicate experimental signatures that differentiate the parton state from other candidate non-Abelian FQH states and predict that a transverse electric field can induce a topological quantum phase transition between two distinct non-Abelian FQH states.

Maximum reflectance and transmittance of films coated with gapped graphene in the context of the Dirac model

NASA Astrophysics Data System (ADS)

Klimchitskaya, G. L.; Mostepanenko, V. M.

2018-06-01

The analytic expressions for the maximum and minimum reflectances of optical films coated with gapped graphene are derived in the application region of the Dirac model taking into account multiple reflections. The respective film thicknesses are also found. In so doing the film material is described by the frequency-dependent index of refraction and graphene by the polarization tensor defined along the real frequency axis. The developed formalism is illustrated by an example of the graphene-coated film made of amorphous silica. Numerical computations of the maximum and minimum reflectances and respective film thicknesses are performed at room temperature in two frequency regions belonging to the near-infrared and far-infrared domains. It is shown that in the far-infrared domain the graphene coating has a profound effect on the values of maximum reflectance and respective film thickness leading to a relative increase in their values by up to 65% and 50%, respectively. The maximum transmittance of a graphene-coated film of appropriately chosen thickness is shown to exceed 90%. Possible applications of the obtained results are discussed.

Graphene Calisthenics: Straintronics of Graphene with Light-Reactive Azobenzene Polymer

NASA Astrophysics Data System (ADS)

Meaker, Kacey; Cao, Peigen; Huo, Mandy; Crommie, Michael

2014-03-01

Although a promising target for next-generation electronics, graphene's lack of a band gap is a severe hindrance. There are many ways of opening a gap, and one controllable way is through application of specific non-uniform strains which can produce extremely large pseudomagnetic fields. This effect was predicted and verified experimentally, but so far there have been few methods developed that reliably control the size, location, separation and amount of strain in graphene. We have used a layer of light-reactive azobenzene polymer beneath the graphene to produce strained monolayer graphene with light exposure. Using Raman spectroscopy, we have measured a shift of up to 20 cm-1 in the 2D peak when the graphene and polymer sample was exposed to 532 nm laser illumination indicating that the graphene is undergoing a strain from deformation of the azobenzene layer below. AFM topographic measurements and COMSOL simulations were used to verify this assertion. Use of polymeric materials to reliably strain graphene in non-uniform ways could result in controllable production of large pseudomagnetic fields in graphene and more control over graphene's low-energy charge carriers.

Determination of a refractive index and an extinction coefficient of standard production of CVD-graphene.

PubMed

Ochoa-Martínez, Efraín; Gabás, Mercedes; Barrutia, Laura; Pesquera, Amaia; Centeno, Alba; Palanco, Santiago; Zurutuza, Amaia; Algora, Carlos

2015-01-28

The refractive index and extinction coefficient of chemical vapour deposition grown graphene are determined by ellipsometry analysis. Graphene films were grown on copper substrates and transferred as both monolayers and bilayers onto SiO2/Si substrates by using standard manufacturing procedures. The chemical nature and thickness of residual debris formed after the transfer process were elucidated using photoelectron spectroscopy. The real layered structure so deduced has been used instead of the nominal one as the input in the ellipsometry analysis of monolayer and bilayer graphene, transferred onto both native and thermal silicon oxide. The effect of these contamination layers on the optical properties of the stacked structure is noticeable both in the visible and the ultraviolet spectral regions, thus masking the graphene optical response. Finally, the use of heat treatment under a nitrogen atmosphere of the graphene-based stacked structures, as a method to reduce the water content of the sample, and its effect on the optical response of both graphene and the residual debris layer are presented. The Lorentz-Drude model proposed for the optical response of graphene fits fairly well the experimental ellipsometric data for all the analysed graphene-based stacked structures.

Controlled formation of closed-edge nanopores in graphene

NASA Astrophysics Data System (ADS)

He, Kuang; Robertson, Alex W.; Gong, Chuncheng; Allen, Christopher S.; Xu, Qiang; Zandbergen, Henny; Grossman, Jeffrey C.; Kirkland, Angus I.; Warner, Jamie H.

2015-07-01

Dangling bonds at the edge of a nanopore in monolayer graphene make it susceptible to back-filling at low temperatures from atmospheric hydrocarbons, leading to potential instability for nanopore applications, such as DNA sequencing. We show that closed edge nanopores in bilayer graphene are robust to back-filling under atmospheric conditions for days. A controlled method for closed edge nanopore formation starting from monolayer graphene is reported using an in situ heating holder and electron beam irradiation within an aberration-corrected transmission electron microscopy. Tailoring of closed-edge nanopore sizes is demonstrated from 1.4-7.4 nm. These results should provide mechanisms for improving the stability of nanopores in graphene for a wide range of applications involving mass transport.Dangling bonds at the edge of a nanopore in monolayer graphene make it susceptible to back-filling at low temperatures from atmospheric hydrocarbons, leading to potential instability for nanopore applications, such as DNA sequencing. We show that closed edge nanopores in bilayer graphene are robust to back-filling under atmospheric conditions for days. A controlled method for closed edge nanopore formation starting from monolayer graphene is reported using an in situ heating holder and electron beam irradiation within an aberration-corrected transmission electron microscopy. Tailoring of closed-edge nanopore sizes is demonstrated from 1.4-7.4 nm. These results should provide mechanisms for improving the stability of nanopores in graphene for a wide range of applications involving mass transport. Electronic supplementary information (ESI) available: Low magnification images, image processing techniques employed, modelling and simulation of closed edge nanoribbon, comprehensive AC-TEM dataset, and supporting analysis. See DOI: 10.1039/c5nr02277k

Reduced graphene oxide-ZnO self-assembled films: tailoring the visible light photoconductivity by the intrinsic defect states in ZnO.

PubMed

Kavitha, M K; Gopinath, Pramod; John, Honey

2015-06-14

ZnO is a wide direct bandgap semiconductor; its absorption can be tuned to the visible spectral region by controlling the intrinsic defect levels. Combining graphene with ZnO can improve its performance by photo-induced charge separation by ZnO and electronic transport through graphene. When reduced graphene oxide-ZnO is prepared by a hydrothermal method, the photophysical studies indicate that oxygen vacancy defect states are healed out by diffusion of oxygen from GO to ZnO during its reduction. Because of the passivation of oxygen vacancies, the visible light photoconductivity of the hybrid is depleted, compared to pure ZnO. In order to overcome this reduction in photocurrent, a photoelectrode is fabricated by layer-by-layer (LBL) self-assembly of ZnO and reduced graphene oxide. The multilayer films are fabricated by the electrostatic LBL self-assembly technique using negatively charged poly(sodium 4-styrene sulfonate)-reduced graphene oxide (PSS-rGO) and positively charged polyacrylamide-ZnO (PAM-ZnO) as building blocks. The multilayer films fabricated by this technique will be highly interpenetrating; it will enhance the interaction between the ZnO and rGO perpendicular to the electrode surface. Upon illumination under bias voltage defect assisted excitation occurs in ZnO and the photogenerated charge carriers can transfer to graphene. The electron transferred to graphene sheets can recombine in two ways; either it can recombine with the holes in the valence band of ZnO in its bilayer or the ZnO in the next bilayer. This type of tunnelling of electrons from graphene to the successive bilayers will result in efficient charge transfer. This transfer and propagation of electron will enhance as the number of bilayers increases, which in turn improve the photocurrent of the multilayer films. Therefore this self-assembly technique is an effective approach to fabricate semiconductor-graphene films with excellent conductivity.

Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles

NASA Astrophysics Data System (ADS)

Meher Abhinav, E.; Chandrasekaran, Gopalakrishnan; Kasmir Raja, S. V.

2017-10-01

Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green's approach by first-principle calculations. The DG-FET of 1.6 nm width, 6 nm channel length (Lch) and HfO2 as gate dielectric has been modeled. For intrinsic deformation of germanene bilayer, we have enforced minute mechanical deformation of wrap and twist (5°) and ripple (0.5 Å) on germanene bilayer channel material. By using NEGF formalism, I-V Characteristics of various strains and deformation tailored DG-FET was calculated. Our results show that rough edge and single vacancy (5-9) in bilayer germanene diminishes the current around 47% and 58% respectively as compared with pristine bilayer germanene. In case of strain tailored bilayer DG-FET, multiple NDR regions were observed which can be utilized in building stable multiple logic states in digital circuits and high frequency oscillators using negative resistive techniques.

Moiré edge states in twisted graphene nanoribbons

NASA Astrophysics Data System (ADS)

Fleischmann, M.; Gupta, R.; Weckbecker, D.; Landgraf, W.; Pankratov, O.; Meded, V.; Shallcross, S.

2018-05-01

The edge physics of graphene based systems is well known to be highly sensitive to the atomic structure at the boundary, with localized zero mode edge states found only on the zigzag-type termination of the lattice. Here we demonstrate that the graphene twist bilayer supports an additional class of edge states, that (i) are found for all edge geometries and thus are robust against edge roughness, (ii) occur at energies coinciding with twist induced Van Hove singularities in the bulk and (iii) possess an electron density strongly modulated by the moiré lattice. Interestingly, these "moiré edge states" exist only for certain lattice commensurations and thus the edge physics of the twist bilayer is, in dramatic contrast to that of the bulk, not uniquely determined by the twist angle.

Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry

DTIC Science & Technology

2010-10-01

Nacional de Grafite Ltda.) and confirmed to be BLG by Raman spectroscopy (see Supporting Information).25 Figure 1(b) shows a schematic and Figure 1(c...by cutting graphene into nanometer size ribbons.11-14 Another avenue is chemical modification of graphene, such as oxidation , hydrogenation and

Sensitive electrochemical detection of dopamine with a DNA/graphene bi-layer modified carbon ionic liquid electrode.

PubMed

Wang, Xiaofeng; You, Zheng; Sha, Hailiang; Cheng, Yong; Zhu, Huanhuan; Sun, Wei

2014-10-01

A DNA and graphene (GR) bi-layer modified carbon ionic liquid electrode (CILE) was fabricated by an electrodeposition method. GR nanosheets were electrodeposited on the surface of CILE at the potential of -1.3 V and then DNA was further deposited at the potential of +0.5 V on GR modified CILE. Electrochemical performances of the fabricated DNA/GR/CILE were carefully investigated. Then electrochemical behaviors of dopamine (DA) on the modified electrode were studied with the calculated electrochemical parameters. Under the optimized conditions, a linear relationship between the oxidation peak current and the concentration of DA was obtained in the range from 0.1 μmol/L to 1.0 mmol/L with a detection limit of 0.027 μmol/L (3σ). The modified electrode exhibited excellent reproducibility, repeatability, stability, validation and robustness for the electrochemical detection of DA. The proposed method was further applied to the DA injection solution and human urine samples determination with satisfactory results. Copyright © 2014 Elsevier B.V. All rights reserved.

Magnetoresistance effect in Fe{sub 20}Ni{sub 80}/graphene/Fe{sub 20}Ni{sub 80} vertical spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Entani, Shiro, E-mail: entani.shiro@qst.go.jp; Naramoto, Hiroshi; Sakai, Seiji

2016-08-22

Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe{sub 20}Ni{sub 80} (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. The linear current-voltage characteristics indicated that ohmic contacts were realized at the interfaces. The systematic characterization revealed the significant modification of the electronic state of the interfacial graphene layer on the Permalloy surface, which indicates the strong interactions at the interface. The ohmic transport was attributable to the strong interface-interaction. The vertical resistivity of the graphene interlayer and the spin asymmetry coefficient at the graphene/Permalloy interface were obtained tomore » be 0.13 Ω cm and 0.06, respectively. It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene.« less

Layer-controllable graphene by plasma thinning and post-annealing

NASA Astrophysics Data System (ADS)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Quantum and classical ripples in graphene

NASA Astrophysics Data System (ADS)

Hašík, Juraj; Tosatti, Erio; MartoÅák, Roman

2018-04-01

Thermal ripples of graphene are well understood at room temperature, but their quantum counterparts at low temperatures are in need of a realistic quantitative description. Here we present atomistic path-integral Monte Carlo simulations of freestanding graphene, which show upon cooling a striking classical-quantum evolution of height and angular fluctuations. The crossover takes place at ever-decreasing temperatures for ever-increasing wavelengths so that a completely quantum regime is never attained. Zero-temperature quantum graphene is flatter and smoother than classical graphene at large scales yet rougher at short scales. The angular fluctuation distribution of the normals can be quantitatively described by coexistence of two Gaussians, one classical strongly T -dependent and one quantum about 2° wide, of zero-point character. The quantum evolution of ripple-induced height and angular spread should be observable in electron diffraction in graphene and other two-dimensional materials, such as MoS2, bilayer graphene, boron nitride, etc.

Transition metal intercalated bilayer silicene

NASA Astrophysics Data System (ADS)

Pandey, Dhanshree; Kamal, C.; Chakrabarti, Aparna

2018-04-01

We investigate the electronic and magnetic properties of Mn, Fe and Co-intercalated silicene bilayer with AA and AB stacking by using spin polarized density functional theory. The intercalation of Mn increases the gap between the two layers of silicene due to the larger atomic radii of Mn as compared to Fe and Co. Bader charge analysis has been performed to understand the bonding between the TM and Si atoms. This also helps in explaining the magnetic moment possessed by the composite systems after intercalating TM in between the layers of bilayer silicene system. This study reveals that a significant net magnetic moment is observed in cases of Mn-intercalated silicene bilayers, whereas Fe has a very small moment of 0.78 µB in the case of AA stacking configuration only. Co intercalation leads to net zero magnetic moment. Further, we find that Fe and Co marginally favor the AB stacking whereas Mn has a slight preference of the AA over the AB configuration. The composite systems, specifically when intercalated with Fe and Co atoms, favor a hybridization which is far away from sp3-like hybridization along the plane of Si atoms in bilayer silicene.

Organosilane-functionalized graphene quantum dots and their encapsulation into bi-layer hollow silica spheres for bioimaging applications.

PubMed

Wen, Ting; Yang, Baocheng; Guo, Yanzhen; Sun, Jing; Zhao, Chunmei; Zhang, Shouren; Zhang, Miao; Wang, Yonggang

2014-11-14

Graphene quantum dots (GQDs) represent an important class of luminescent quantum dots owing to their low toxicity and superior biocompatibility. Chemical functionalization of GQDs and subsequent combination with other materials further provide attractive techniques for advanced bioapplications. Herein, we report the facile fabrication of fluorescent organosilane-functionalized graphene quantum dots (Si-GQDs) and their embedding into mesoporous hollow silica spheres as a biolabel for the first time. Well-proportioned Si-GQDs with bright and excitation dependent tunable emissions in the visible region were obtained via a simple and economical solvothermal route adopting graphite oxide as a carbon source and 3-(2-aminoethylamino)-propyltrimethoxysilane as a surface modifier. The as-synthesized Si-GQDs can be well dispersed and stored in organic solvents, easily manufactured into transparent film and bulk form, and particularly provide great potential to be combined with other materials. As a proof-of-principle experiment, we demonstrate the successful incorporation of Si-GQDs into hollow mesoporous silica spheres and conduct preliminary cellular imaging experiments. Interestingly, the Si-GQDs not only serve as fluorescent chromophores in the composite material, but also play a crucial role in the formation of mesoporous hollow silica spheres with a distinctive bi-layer architecture. The layer thickness and optical properties can be precisely controlled by simply adjusting the silane coupling agent addition procedure in the preparation process. Our demonstration of low-cost Si-GQDs and their encapsulation into multifunctional composites may expand the applications of carbon-based nanomaterials for future biomedical imaging and other optoelectronic applications.

Reversible Lifting of Surface Supported Lipid Bilayers with a Membrane-Spanning Nonionic Triblock Copolymer

DOE PAGES

Hayden, Steven C.; Junghans, Ann; Majewski, Jaroslaw; ...

2017-02-22

Neutron reflectometry was used to monitor structural variations in surface supported DMPC bilayers induced by the addition of Triton X-100, a surfactant commonly used to aid solubilization of membrane proteins, and the co-addition of a membrane spanning non-ionic amphiphilic triblock copolymer, (PEO 117-PPO 47-PE O117, Pluronic F98). Surfactant addition causes slight compression of the bilayer thickness and the creation of a distinct EO layer that increases the hydrophilic layer proximal to the supporting substrate (i.e., a water and EO gap between the lipid bilayer and quartz) to 6.8 ± 0.4 Å. Addition of the triblock copolymer into the DMPC: Tritonmore » X-100 bilayer increases the complexity (broadens) the lipid phase transition, further compresses the bilayer, and continues to expand the proximal hydrophilic layer thickness. The observed structural changes are temperature dependent with transmembrane polymer insertion achieved at 37 °C leading to a compressed membrane thickness of 39.2 ± 0.2 Å and proximal gap of 45.2 ± 0.2 Å. Temperature driven exclusion of the polymer at 15 °C causes partitioning of the polymer into the proximal space generating a large hydrogel cushion 162 ± 16 Å thick. An intermediate gap width (10 – 27 Å) is achieved at room temperature (22 – 25 °C). The temperature-driven changes in the proximal hydrophilic gap dimensions are shown to be reversible but thermal history causes variation in magnitude. Temperature-driven changes in polymer association with a supported lipid bilayer offer a facile means to reversibly control both the membrane characteristics as well as the separation between membrane and solid substrate.« less

Reversible Lifting of Surface Supported Lipid Bilayers with a Membrane-Spanning Nonionic Triblock Copolymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayden, Steven C.; Junghans, Ann; Majewski, Jaroslaw

Neutron reflectometry was used to monitor structural variations in surface supported DMPC bilayers induced by the addition of Triton X-100, a surfactant commonly used to aid solubilization of membrane proteins, and the co-addition of a membrane spanning non-ionic amphiphilic triblock copolymer, (PEO 117-PPO 47-PE O117, Pluronic F98). Surfactant addition causes slight compression of the bilayer thickness and the creation of a distinct EO layer that increases the hydrophilic layer proximal to the supporting substrate (i.e., a water and EO gap between the lipid bilayer and quartz) to 6.8 ± 0.4 Å. Addition of the triblock copolymer into the DMPC: Tritonmore » X-100 bilayer increases the complexity (broadens) the lipid phase transition, further compresses the bilayer, and continues to expand the proximal hydrophilic layer thickness. The observed structural changes are temperature dependent with transmembrane polymer insertion achieved at 37 °C leading to a compressed membrane thickness of 39.2 ± 0.2 Å and proximal gap of 45.2 ± 0.2 Å. Temperature driven exclusion of the polymer at 15 °C causes partitioning of the polymer into the proximal space generating a large hydrogel cushion 162 ± 16 Å thick. An intermediate gap width (10 – 27 Å) is achieved at room temperature (22 – 25 °C). The temperature-driven changes in the proximal hydrophilic gap dimensions are shown to be reversible but thermal history causes variation in magnitude. Temperature-driven changes in polymer association with a supported lipid bilayer offer a facile means to reversibly control both the membrane characteristics as well as the separation between membrane and solid substrate.« less

Spin and charge transport across cobalt/graphene interfaces

NASA Astrophysics Data System (ADS)

Chshiev, Mairbek; Kalitsov, Alan; Mryasov, Oleg

We report ballistic calculations of in-plane and out-of-plane spin and charge transport through graphene attached to the hcp-Co electrodes. Our calculations are based on the Keldysh non-equilibrium Green Function formalism and the tight binding Hamiltonian model tailored to treat both lateral and vertical device configurations. We present results for (i) vertical device that consists of a one-side fluorinated C4F graphene sandwiched between two hcp Co electrodes and (ii) lateral device consisting of pristine graphene/C4F graphene bilayer with two top hcp-Co electrodes Our calculations predict large magnetoresistance with small resistance-area product and significant deviation from sinusoidal behavior of spin transfer torque for the vertical device configuration.

Raman enhancement by graphene-Ga2O3 2D bilayer film

PubMed Central

2014-01-01

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications. PMID:24472433

Raman enhancement by graphene-Ga2O3 2D bilayer film.

PubMed

Zhu, Yun; Yu, Qing-Kai; Ding, Gu-Qiao; Xu, Xu-Guang; Wu, Tian-Ru; Gong, Qian; Yuan, Ning-Yi; Ding, Jian-Ning; Wang, Shu-Min; Xie, Xiao-Ming; Jiang, Mian-Heng

2014-01-28

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.

Theoretical studies of structure-property relations in graphene-based carbon nanostructures

NASA Astrophysics Data System (ADS)

Maroudas, Dimitrios

2014-03-01

This presentation focuses on establishing relations between atomic structure, electronic structure, and properties in graphene-based carbon nanostructures through first-principles density functional theory calculations and molecular-dynamics simulations. We have analyzed carbon nanostructure formation from twisted bilayer graphene, upon creation of interlayer covalent C-C bonds due to patterned hydrogenation or fluorination. For small twist angles and twist angles near 30 degrees, interlayer covalent bonding generates superlattices of diamond-like nanocrystals and of fullerene-like configurations, respectively, embedded within the graphene layers. The electronic band gaps of these superlattices can be tuned through selective chemical functionalization and creation of interlayer bonds, and range from a few meV to over 1.2 eV. The mechanical properties of these superstructures also can be precisely tuned by controlling the extent of chemical functionalization. Importantly, the shear modulus is shown to increase monotonically with the fraction of sp3-hybridized C-C bonds. We have also studied collective interactions of multiple defects such as random distributions of vacancies in single-layer graphene (SLG). We find that a crystalline-to-amorphous structural transition occurs at vacancy concentrations of 5-10% over a broad temperature range. The structure of our defect-induced amorphized graphene is in excellent agreement with experimental observations of SLG exposed to a high electron irradiation dose. Simulations of tensile tests on these irradiated graphene sheets identify trends for the ultimate tensile strength, failure strain, and toughness as a function of vacancy concentration. The vacancy-induced amorphization transition is accompanied by a brittle-to-ductile transition in the failure response of irradiated graphene sheets and even heavily damaged samples exhibit tensile strengths near 30 GPa, in significant excess of those typical of engineering materials.

Strongly anisotropic spin relaxation in graphene-transition metal dichalcogenide heterostructures at room temperature

NASA Astrophysics Data System (ADS)

Benítez, L. Antonio; Sierra, Juan F.; Savero Torres, Williams; Arrighi, Aloïs; Bonell, Frédéric; Costache, Marius V.; Valenzuela, Sergio O.

2018-03-01

A large enhancement in the spin-orbit coupling of graphene has been predicted when interfacing it with semiconducting transition metal dichalcogenides. Signatures of such an enhancement have been reported, but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and tungsten or molybdenum disulphide (WS2, MoS2). We observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, being largest when the spins point out of the graphene plane. This indicates that the strong spin-valley coupling in the transition metal dichalcogenide is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials.

Self-consistent perturbation theory for two dimensional twisted bilayers

NASA Astrophysics Data System (ADS)

Shirodkar, Sharmila N.; Tritsaris, Georgios A.; Kaxiras, Efthimios

Theoretical modeling and ab-initio simulations of two dimensional heterostructures with arbitrary angles of rotation between layers involve unrealistically large and expensive calculations. To overcome this shortcoming, we develop a methodology for weakly interacting heterostructures that treats the effect of one layer on the other as perturbation, and restricts the calculations to their primitive cells. Thus, avoiding computationally expensive supercells. We start by approximating the interaction potential between the twisted bilayers to that of a hypothetical configuration (viz. ideally stacked untwisted layers), which produces band structures in reasonable agreement with full-scale ab-initio calculations for commensurate and twisted bilayers of graphene (Gr) and Gr/hexagonal boron nitride (h-BN) heterostructures. We then self-consistently calculate the charge density and hence, interaction potential of the heterostructures. In this work, we test our model for bilayers of various combinations of Gr, h-BN and transition metal dichalcogenides, and discuss the advantages and shortcomings of the self-consistently calculated interaction potential. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

Tuning electronic properties by oxidation-reduction reactions at graphene-ruthenium interface

DOE PAGES

Kandyba, Viktor; Al-Mahboob, Abdullah; Giampietri, Alessio; ...

2018-06-06

Mass production of graphene is associated with the growth on catalysts used also in other chemical reactions. In this study, we exploit the oxidation-reduction to tailor the properties of single layer graphene domains with incorporated bi-layer patches on ruthenium. Using photoelectron spectromicroscopy techniques, we find that oxygen, intercalating under single layer and making it p-doped by the formation of Ru-O x, does not intercalate under the bilayer patches with n-doped upper layer, but decorates them under single layer surrounding creating lateral p-n junctions with chemical potential difference of 1.2 eV. O-reduction by thermal treatment in vacuum results in C-vacancy defectsmore » enhancing electronic coupling of remained graphene to Ru, whereas in H 2, vacancy formation is suppressed. Also, for the domains below 15–25 μm size, after O-reduction in H 2, graphene/Ru coupling is restored, while wrinkle pattern produced by O-intercalation is irreversible and can trap reaction products between the wrinkles and Ru surface step edges. In fact, in certain regions of bigger domains, the products, containing H 2O and/or its fragments, remain at the interface, making graphene decoupled and undoped.« less

Parametric Investigation of the Isothermal Kinetics of Growth of Graphene on a Nickel Catalyst in the Process of Chemical Vapor Deposition of Hydrocarbons

NASA Astrophysics Data System (ADS)

Futko, S. I.; Shulitskii, B. G.; Labunov, V. A.; Ermolaeva, E. M.

2016-11-01

A kinetic model of isothermal synthesis of multilayer graphene on the surface of a nickel foil in the process of chemical vapor deposition, on it, of hydrocarbons supplied in the pulsed regime is considered. The dependences of the number of graphene layers formed and the time of their growth on the temperature of the process, the concentration of acetylene, and the thickness of the nickel foil were calculated. The regime parameters of the process of chemical vapor deposition, at which single-layer graphene and bi-layer graphene are formed, were determined. The dynamics of growth of graphene domains at chemical-vapor-deposition parameters changing in wide ranges was investigated. It is shown that the time dependences of the rates of growth of single-layer graphene and bi-layer graphene are nonlinear in character and that they are determined by the kinetics of nucleation and growth of graphene and the diffusion flow of carbon atoms in the nickel foil.

Graphene: from functionalization to devices

NASA Astrophysics Data System (ADS)

Tejeda, Antonio; Soukiassian, Patrick G.

2014-03-01

The year 2014 marks the first decade of the rise of graphene. Graphene, a single atomic layer of carbon atoms in sp2 bonding configuration having a honeycomb structure, has now become a well-known and well-established material. Among some of its many outstanding fundamental properties, one can mention a very high carrier mobility, a very large spin diffusion length, unsurpassed mechanical properties as graphene is the strongest material ever measured and an exceptional thermal conductivity scaling more than one order of magnitude above that of copper. After the first years of the graphene rush, graphene growth is now well controlled using various methods like epitaxial growth on silicon carbide substrate, chemical vapour deposition (CVD) or plasma techniques on metal, insulator or semiconductor substrates. More applied research is now taking over the initial studies on graphene production. Indeed, graphene is a promising material for many advanced applications such as, but not limited to, electronic, spintronics, sensors, photonics, micro/nano-electromechanical (MEMS/NEMS) systems, super-capacitors or touch-screen technologies. In this context, this Special Issue of the Journal of Physics D: Applied Physics on graphene reviews some of the recent achievements, progress and prospects in this field. It includes a collection of seventeen invited articles covering the current status and future prospects of some selected topics of strong current interest. This Special Issue is organized in four sections. The first section is dedicated to graphene devices, and opens with an article by de Heer et al on an investigation of integrating graphene devices with silicon complementary metal-oxide-semiconductor (CMOS) technology. Then, a study by Svintsov et al proposes a lateral all-graphene tunnel field-effect transistor (FET) with a high on/off current switching ratio. Next, Tsukagoshi et al present how a band-gap opening occurs in a graphene bilayer by using a perpendicular

Synthesis and Application of Graphene Based Nanomaterials

NASA Astrophysics Data System (ADS)

Peng, Zhiwei

Graphene, a two-dimensional sp2-bonded carbon material, has recently attracted major attention due to its excellent electrical, optical and mechanical properties. Depending on different applications, graphene and its derived hybrid nanomaterials can be synthesized by either bottom-up chemical vapor deposition (CVD) methods for electronics, or various top-down chemical reaction methods for energy generation and storage devices. My thesis begins with the investigation of CVD synthesis of graphene thin films in Chapter 1, including the direct growth of bilayer graphene on insulating substrates and synthesis of "rebar graphene": a hybrid structure with graphene and carbon or boron nitride nanotubes. Chapter 2 discusses the synthesis of nanoribbon-shaped materials and their applications, including splitting of vertically aligned multi-walled carbon nanotube carpets for supercapacitors, synthesis of dispersable ferromagnetic graphene nanoribbon stacks with enhanced electrical percolation properties in magnetic field, graphene nanoribbon/SnO 2 nanocomposite for lithium ion batteries, and enhanced electrocatalysis for hydrogen evolution reactions from WS2 nanoribbons. Next, Chapter 3 discusses graphene coated iron oxide nanomaterials and their use in energy storage applications. Finally, Chapter 4 introduces the development, characterization, and fabrication of laser induced graphene and its application as supercapacitors.

SERS substrate based on silver nanoparticles and graphene: Dependence on the layer number of graphene

NASA Astrophysics Data System (ADS)

Garg, Preeti; Soni, R. K.; Raman, R.

2018-05-01

In this report, we describe a low-cost fabrication process for highly sensitive SERS substrate by using thermal evaporation technique. The SERS substrate structure consists of silver nanoparticles deposited on monolayer, bilayer and few layer graphene. The fabricated SERS substrates are investigated by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and confocal Raman spectroscope. From the surface morphology we have verified that the fabricated SERS substrate consist of high-density of silver nanoparticles with their size distribution varies from 10 to 150 nm. The surface-enhanced Raman scattering activities of these nanostructures is highest for monolayer graphene.

Resistivity of Rotated Graphite-Graphene Contacts.

PubMed

Chari, Tarun; Ribeiro-Palau, Rebeca; Dean, Cory R; Shepard, Kenneth

2016-07-13

Robust electrical contact of bulk conductors to two-dimensional (2D) material, such as graphene, is critical to the use of these 2D materials in practical electronic devices. Typical metallic contacts to graphene, whether edge or areal, yield a resistivity of no better than 100 Ω μm but are typically >10 kΩ μm. In this Letter, we employ single-crystal graphite for the bulk contact to graphene instead of conventional metals. The graphite contacts exhibit a transfer length up to four-times longer than in conventional metallic contacts. Furthermore, we are able to drive the contact resistivity to as little as 6.6 Ω μm(2) by tuning the relative orientation of the graphite and graphene crystals. We find that the contact resistivity exhibits a 60° periodicity corresponding to crystal symmetry with additional sharp decreases around 22° and 39°, which are among the commensurate angles of twisted bilayer graphene.

Sunlight-driven eco-friendly smart curtain based on infrared responsive graphene oxide-polymer photoactuators.

PubMed

Leeladhar; Raturi, Parul; Singh, J P

2018-02-27

Photomechanical actuation is the conversion of light energy into mechanical energy through some smart materials. Infrared-responsive smart materials have become an emerging field of research due to easy availability and eco-friendly nature of their stimulus in the form of sunlight, which contains about 50% of near-infrared(nIR) making these materials useful at macro-scale photoactuator applications. Here, we demonstrate fabrication of highly versatile nIR triggered photoactuators based on graphene oxide/polycarbonate bilayers that offers fast, low-cost fabrication, large deflection, reversible actuation and wavelength-selective response. The photoactuators are realized by vacuum filtration of graphene oxide/water dispersion through polycarbonate membrane resulting graphene oxide/polymer bilayer structure. The photoactuation response was measured in the form of deflection from equilibrium position as a result of infrared-irradiation. The deflection is caused by the generated thermal stress at the interface of bilayers due to mismatch of thermal expansion coefficient as a results of nIR absorption by graphene oxide and subsequent temperature rise. A maximum deflection of 12 mm (circular-shaped structure with diameter 28 mm) with corresponding bending curvature of 0.33 cm -1 was shown by this photoactuator for illumination intensity of 106 mW/cm 2 . Few applications of these photoactuators such as sunlight-driven smart curtain, infrared actuated curtain and self-folding box are also demonstrated.

Layer-by-layer self-assembled multilayer films composed of graphene/polyaniline bilayers: high-energy electrode materials for supercapacitors.

PubMed

Sarker, Ashis K; Hong, Jong-Dal

2012-08-28

Multilayer assemblies of uniform ultrathin film electrodes with good electrical conductivity and very large surface areas were prepared for use as electrochemical capacitors. A layer-by-layer self-assembly approach was employed in an effort to improve the processability of highly conducting polyaniline (PANi) and chemically modified graphene. The electrochemical properties of the multilayer film (MF-) electrodes, including the sheet resistance, volumetric capacitance, and charge/discharge ratio, were determined by the morphological modification and the method used to reduce the graphene oxide (GO) to reduced graphene oxide (RGO) in the multilayer films. The PANi and GO concentrations could be modulated to control the morphology of the GO monolayer film in the multilayer assemblies. Optical ellipsometry was used to determine the thickness of the GO film in a single layer (1.32 nm), which agreed well with the literature value (~1.3 nm). Hydroiodic acid (HI), hydrazine, or pyrolysis were tested for the reduction of GO to RGO. HI was found to be the most efficient technique for reducing the GO to RGO in the multilayer assemblies while minimizing damage to the virgin state of the acid-doped PANi. Ultimately, the MF-electrode, which could be optimized by fine-tuning the nanostructure and selecting a suitable reduction method, exhibited an excellent volumetric capacitance, good cycling stability, and a rapid charge/discharge rate, which are required for supercapacitors. A MF-electrode composed of 15 PANi/RGO bilayers yielded a volumetric capacitance of 584 F/cm(3) at a current density of 3.0 A/cm(3). Although this value decreased exponentially as the current density increased, approaching a value of 170 F/cm(3) at 100 A/cm(3), this volumetric capacitance is one of the best yet reported for the other carbon-based materials. The intriguing features of the MF-electrodes composed of PANi/RGO multilayer films offer a new microdimensional design for high energy storage devices

Predicting a graphene-like WB4 nanosheet with a double Dirac cone, an ultra-high Fermi velocity and significant gap opening by spin-orbit coupling.

PubMed

Zhang, Chunmei; Jiao, Yalong; Ma, Fengxian; Bottle, Steven; Zhao, Mingwen; Chen, Zhongfang; Du, Aijun

2017-02-15

The zero-band gap nature of graphene prevents it from performing as a semi-conductor in modern electronics. Although various graphene modification strategies have been developed to address this limitation, the very small band gap of these materials and the suppressed charge carrier mobility of the devices developed still significantly hinder graphene's applications. In this work, a two dimensional (2D) WB 4 monolayer, which exhibits a double Dirac cone, was conceived and assessed using density functional theory (DFT) methods, which would provide a sizable band gap while maintaining higher charge mobility with a Fermi velocity of 1.099 × 10 6 m s -1 . Strong spin-orbit-coupling can generate an observable band gap of up to 0.27 eV that primarily originates from the d-orbit of the heavy metal atom W; therefore a 2D WB 4 nanosheet would be operable at room temperature (T = 300 K) and would be a promising candidate to fabricate nanoelectronics in the upcoming post-silicon era. The phonon-spectrum and ab initio molecular dynamics calculations further demonstrate the dynamic and thermal stability of such nanosheets, thus, suggesting a potentially synthesizable Dirac material.

Width-Dependent Band Gap in Armchair Graphene Nanoribbons Reveals Fermi Level Pinning on Au(111)

PubMed Central

2017-01-01

We report the energy level alignment evolution of valence and conduction bands of armchair-oriented graphene nanoribbons (aGNR) as their band gap shrinks with increasing width. We use 4,4″-dibromo-para-terphenyl as the molecular precursor on Au(111) to form extended poly-para-phenylene nanowires, which can subsequently be fused sideways to form atomically precise aGNRs of varying widths. We measure the frontier bands by means of scanning tunneling spectroscopy, corroborating that the nanoribbon’s band gap is inversely proportional to their width. Interestingly, valence bands are found to show Fermi level pinning as the band gap decreases below a threshold value around 1.7 eV. Such behavior is of critical importance to understand the properties of potential contacts in GNR-based devices. Our measurements further reveal a particularly interesting system for studying Fermi level pinning by modifying an adsorbate’s band gap while maintaining an almost unchanged interface chemistry defined by substrate and adsorbate. PMID:29049879

Graphene-graphite oxide field-effect transistors.

PubMed

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Microwave Hydrothermal Synthesis of Reduced Graphene Oxide: Effects of Microwave Power and Irradiation Time

NASA Astrophysics Data System (ADS)

Agusu, La; Ode Ahmad, La; Anggara, Desna; Alimin; Mitsudo, Seitaro; Fujii, Yutaka; Kikuchi, Hiromitsu

2018-04-01

Reduced graphene oxide has been synthesihzed by one-pot microwave assisted hydrothermal method. Effects of microwave power and irradiation time to its crystal structure and electrical conductivity were investigated. Here, graphene oxide, firstly, were synthesized by modified hummers method and subsequently mixed with Zn as a reducing agent. Then it was transferred to modified domestic microwave oven (800 watts) with glass distiller equipment for completely reduction process. Three different power levels (240, 400, 630 watts) and two cases of irradiation times (20 and 40 minutes) were treated. XRD study shows that irradiation time variation is more effective than the variation of power level. Power level of 270 watts and for 40 minutes microwave irradiation are enough for producing estimated bilayer rGO with graphene interlayer of ~0.4 nm. Bilayer graphene and water molecule (~0.3 nm) may vibrate the same manner and perhaps they are accepting the same temperature. Graphene seems to be re-arranged in unspecified way among the thermal pressure, temperature gradient and/or water surface tension between graphene and water induced by microwave, in order to achieve thermal equilibrium through out the system The electrical conductivity rGO/PVA (60/40 %w) paper are ranging from 15.6 to 43.4 mS/cm.

Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

NASA Astrophysics Data System (ADS)

Rahmani, Meisam; Ghafoori Fard, Hassan; Ahmadi, Mohammad Taghi; Rahbarpour, Saeideh; Habibiyan, Hamidreza; Varmazyari, Vali; Rahmani, Komeil

2017-10-01

The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I-V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

Tuning band gap of monolayer and bilayer SnS2 by strain effect and external electric field: A first principles calculations

NASA Astrophysics Data System (ADS)

Rahman, Abeera; Shin, Young-Han

Recently many efforts have been paid to two-dimensional layered metal dichalcogenides (LMDs). Among them MoS2 has become a prototype LMD, and recent studies show surprising and rich new physics emerging in other van der Waals materials such as layered SnS2 [1-4]. SnS2 is a semiconducting earth-abundant material and Sn is a group IV element replacing the transition metal in MoS2. SnS2 shows new possibilities in various potential applications. However, the knowledge on basic properties of layered SnS2 is still not well understood. In this study, we consider two types of structures; 1T with P 3 m 1 (164) space group and 1H with P63 / mmc (194) space group. Our first principles calculations show that the 1T structure for SnS2 is more stable than the 1H structure whereas latter is more stable for MoS2. Moreover,in contrast to MoS2,SnS2 shows an indirect band gap both for 1T and 1H structures while 1T MoS2 is metallic and 1H has a direct band gap. We also study strain effect in the range of 0-10% on the band structure for monolayer and bilayer SnS2 (both for 1T and 1H structures).We find significant change in their band gaps. We also investigate the bilayer SnS2 with and without out-of-plane stress. This research was supported by Brain Korea 21 Plus Program and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and future Planning (NRF-2014M3A7B4049367, NRF-2014R1A2A1A1105089).

Penta-graphene: A new carbon allotrope

DOE PAGES

Zhang, Shunhong; Zhou, Jian; Wang, Qian; ...

2015-02-02

A 2D metastable carbon allotrope, penta-graphene, composed entirely of carbon pentagons and resembling the Cairo pentagonal tiling, is proposed in this paper. State-of-the-art theoretical calculations confirm that the new carbon polymorph is not only dynamically and mechanically stable, but also can withstand temperatures as high as 1000 K. Due to its unique atomic configuration, penta-graphene has an unusual negative Poisson’s ratio and ultrahigh ideal strength that can even outperform graphene. Furthermore, unlike graphene that needs to be functionalized for opening a band gap, penta-graphene possesses an intrinsic quasi-direct band gap as large as 3.25 eV, close to that of ZnOmore » and GaN. Equally important, penta-graphene can be exfoliated from T12-carbon. When rolled up, it can form pentagon-based nanotubes which are semiconducting, regardless of their chirality. When stacked in different patterns, stable 3D twin structures of T12-carbon are generated with band gaps even larger than that of T12-carbon. Finally, the versatility of penta-graphene and its derivatives are expected to have broad applications in nanoelectronics and nanomechanics.« less

Buckling failure of square ice-nanotube arrays constrained in graphene nanocapillaries.

PubMed

Zhu, YinBo; Wang, FengChao; Wu, HengAn

2016-08-07

Graphene confinement provides a new physical and mechanical environment with ultrahigh van der Waals pressure, resulting in new quasi-two-dimensional phases of few-layer ice. Polymorphic transition can occur in bilayer constrained water/ice system. Here, we perform a comprehensive study of the phase transition of AA-stacked bilayer water constrained within a graphene nanocapillary. The compression-limit and superheating-limit (phase) diagrams are obtained, based on the extensive molecular-dynamics simulations at numerous thermodynamic states. Liquid-to-solid, solid-to-solid, and solid-to-liquid-to-solid phase transitions are observed in the compression and superheating of bilayer water. Interestingly, there is a temperature threshold (∼275 K) in the compression-limit diagram, which indicates that the first-order and continuous-like phase transitions of bilayer water depend on the temperature. Two obviously different physical processes, compression and superheating, display similar structural evolution; that is, square ice-nanotube arrays (BL-VHDI) will bend first and then transform into bilayer triangular AA stacking ice (BL-AAI). The superheating limit of BL-VHDI exhibits local maxima, while that of BL-AAI increases monotonically. More importantly, from a mechanics point of view, we propose a novel mechanism of the transformation from BL-VHDI to BL-AAI, both for the compression and superheating limits. This structural transformation can be regarded as the "buckling failure" of the square-ice-nanotube columns, which is dominated by the lateral pressure.

Buckling failure of square ice-nanotube arrays constrained in graphene nanocapillaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, YinBo; Wang, FengChao, E-mail: wangfc@ustc.edu.cn; Wu, HengAn

Graphene confinement provides a new physical and mechanical environment with ultrahigh van der Waals pressure, resulting in new quasi-two-dimensional phases of few-layer ice. Polymorphic transition can occur in bilayer constrained water/ice system. Here, we perform a comprehensive study of the phase transition of AA-stacked bilayer water constrained within a graphene nanocapillary. The compression-limit and superheating-limit (phase) diagrams are obtained, based on the extensive molecular-dynamics simulations at numerous thermodynamic states. Liquid-to-solid, solid-to-solid, and solid-to-liquid-to-solid phase transitions are observed in the compression and superheating of bilayer water. Interestingly, there is a temperature threshold (∼275 K) in the compression-limit diagram, which indicates thatmore » the first-order and continuous-like phase transitions of bilayer water depend on the temperature. Two obviously different physical processes, compression and superheating, display similar structural evolution; that is, square ice-nanotube arrays (BL-VHDI) will bend first and then transform into bilayer triangular AA stacking ice (BL-AAI). The superheating limit of BL-VHDI exhibits local maxima, while that of BL-AAI increases monotonically. More importantly, from a mechanics point of view, we propose a novel mechanism of the transformation from BL-VHDI to BL-AAI, both for the compression and superheating limits. This structural transformation can be regarded as the “buckling failure” of the square-ice-nanotube columns, which is dominated by the lateral pressure.« less

Self-assembled graphene/azo polyelectrolyte multilayer film and its application in electrochemical energy storage device.

PubMed

Wang, Dongrui; Wang, Xiaogong

2011-03-01

Graphene/azo polyelectrolyte multilayer films were fabricated through electrostatic layer-by-layer (LbL) self-assembly, and their performance as electrochemical capacitor electrode was investigated. Cationic azo polyelectrolyte (QP4VP-co-PCN) was synthesized through radical polymerization, postpolymerization azo coupling reaction, and quaternization. Negatively charged graphene nanosheets were prepared by a chemically modified method. The LbL films were obtained by alternately dipping a piece of the pretreated substrates in the QP4VP-co-PCN and nanosheet solutions. The processes were repeated until the films with required numbers of bilayers were obtained. The self-assembly and multilayer surface morphology were characterized by UV-vis spectroscopy, AFM, SEM, and TEM. The performance of the LbL films as electrochemical capacitor electrode was estimated using cyclic voltammetry. Results show that the graphene nanosheets are densely packed in the multilayers and form random graphene network. The azo polyelectrolyte cohesively interacts with the nanosheets in the multilayer structure, which prevents agglomeration of graphene nanosheets. The sheet resistance of the LbL films decreases with the increase of the layer numbers and reaches the stationary value of 1.0 × 10(6) Ω/square for the film with 15 bilayers. At a scanning rate of 50 mV/s, the LbL film with 9 bilayers shows a gravimetric specific capacitance of 49 F/g in 1.0 M Na(2)SO(4) solution. The LbL films developed in this work could be a promising type of the electrode materials for electric energy storage devices.

Proximity enhanced quantum spin Hall state in graphene

DOE PAGES

Kou, Liangzhi; Hu, Feiming; Yan, Binghai; ...

2015-02-23

Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin–orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb 2Te 3 (or MoTe 2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning themore » interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane–Mele interaction in competition with Kekulé deformation and symmetry breaking. As a result, the present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.« less

Highly Tunable Aptasensing Microarrays with Graphene Oxide Multilayers

NASA Astrophysics Data System (ADS)

Jung, Yun Kyung; Lee, Taemin; Shin, Eeseul; Kim, Byeong-Su

2013-11-01

A highly tunable layer-by-layer (LbL)-assembled graphene oxide (GO) array has been devised for high-throughput multiplex protein sensing. In this array, the fluorescence of different target-bound aptamers labeled with dye is efficiently quenched by GO through fluorescence resonance energy transfer (FRET), and simultaneous multiplex target detection is performed by recovering the quenched fluorescence caused by specific binding between an aptamer and a protein. Thin GO films consisting of 10 bilayers displayed a high quenching ability, yielding over 85% fluorescence quenching with the addition of a 2 μM dye-labeled aptamer. The limit for human thrombin detection in the 6- and 10-bilayered GO array is estimated to be 0.1 and 0.001 nM, respectively, indicating highly tunable nature of LbL assembled GO multilayers in controlling the sensitivity of graphene-based FRET aptasensor. Furthermore, the GO chip could be reused up to four times simply by cleaning it with distilled water.

Graphene-based non-Boolean logic circuits

NASA Astrophysics Data System (ADS)

Liu, Guanxiong; Ahsan, Sonia; Khitun, Alexander G.; Lake, Roger K.; Balandin, Alexander A.

2013-10-01

Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in graphene via quantum confinement or surface functionalization have not resulted in a breakthrough. Here we show that the negative differential resistance experimentally observed in graphene field-effect transistors of "conventional" design allows for construction of viable non-Boolean computational architectures with the gapless graphene. The negative differential resistance—observed under certain biasing schemes—is an intrinsic property of graphene, resulting from its symmetric band structure. Our atomistic modeling shows that the negative differential resistance appears not only in the drift-diffusion regime but also in the ballistic regime at the nanometer-scale—although the physics changes. The obtained results present a conceptual change in graphene research and indicate an alternative route for graphene's applications in information processing.

Schottky diode model for non-parabolic dispersion in narrow-gap semiconductor and few-layer graphene

NASA Astrophysics Data System (ADS)

Ang, Yee Sin; Ang, L. K.; Zubair, M.

Despite the fact that the energy dispersions are highly non-parabolic in many Schottky interfaces made up of 2D material, experimental results are often interpreted using the conventional Schottky diode equation which, contradictorily, assumes a parabolic energy dispersion. In this work, the Schottky diode equation is derived for narrow-gap semiconductor and few-layer graphene where the energy dispersions are highly non-parabolic. Based on Kane's non-parabolic band model, we obtained a more general Kane-Schottky scaling relation of J (T2 + γkBT3) which connects the contrasting J T2 in the conventional Schottky interface and the J T3 scaling in graphene-based Schottky interface via a non-parabolicity parameter, γ. For N-layer graphene of ABC -stacking and of ABA -stacking, the scaling relation follows J T 2 / N + 1 and J T3 respectively. Intriguingly, the Richardson constant extracted from the experimental data using an incorrect scaling can differ with the actual value by more than two orders of magnitude. Our results highlights the importance of using the correct scaling relation in order to accurately extract important physical properties, such as the Richardson constant and the Schottky barrier's height.

Controlling the electronic structure of graphene using surface-adsorbate interactions

DOE PAGES

Matyba, Piotr; Carr, Adra; Chen, Cong; ...

2015-07-15

Hybridization of atomic orbitals in graphene on Ni(111) opens up a large energy gap of ≈2.8eV between nonhybridized states at the K point. Here we use alkali-metal adsorbate to reduce and even eliminate this energy gap, and also identify a new mechanism responsible for decoupling graphene from the Ni substrate without intercalation of atomic species underneath. Using angle-resolved photoemission spectroscopy and density functional theory calculations, we show that the energy gap is reduced to 1.3 eV due to moderate decoupling after adsorption of Na on top of graphene. Calculations confirm that after adsorption of Na, graphene bonding to Ni ismore » much weaker due to a reduced overlap of atomic orbitals, which results from n doping of graphene. Finally, we show that the energy gap is eliminated by strong decoupling resulting in a quasifreestanding graphene, which is achieved by subsequent intercalation of the Na underneath graphene. Furthermore, the ability to partially decouple graphene from a Ni substrate via n doping, with or without intercalation, suggests that the graphene-to-substrate interaction could be controlled dynamically.« less

Thermoelectric transport properties in graphene connected molecular junctions

NASA Astrophysics Data System (ADS)

Rodriguez, S. T.; Grosu, I.; Crisan, M.; Ţifrea, I.

2018-02-01

We study the electronic contribution to the main thermoelectric properties of a molecular junction consisting of a single quantum dot coupled to graphene external leads. The system electrical conductivity (G), Seebeck coefficient (S), and the thermal conductivity (κ), are numerically calculated based on a Green's function formalism that includes contributions up to the Hartree-Fock level. We consider the system leads to be made either of pure or gapped-graphene. To describe the free electrons in the gapped-graphene electrodes we used two possible scenarios, the massive gap scenario, and the massless gap scenario, respectively. In all cases, the Fano effect is responsible for a strong violation of the Wiedemann-Franz law and we found a substantial increase of the system figure of merit ZT due to a drastic reduction of the system thermal coefficient. In the case of gapped-graphene electrodes, the system figure of merit presents a maximum at an optimal value of the energy gap of the order of Δ / D ∼ 0.002 (massive gap scenario) and Δ / D ∼ 0.0026 (massless gap scenario). Additionally, for all cases, the system figure of merit is temperature dependent.

Electronic dispersion from long-range atomic ordering and periodic potentials in two overlapping graphene sheets

NASA Astrophysics Data System (ADS)

Ohta, Taisuke; Robinson, Jeremy; Feibelman, Peter; Beechem, Thomas; Diaconescu, Bogdan; Bostwick, Aaron; Rotenberg, Eli; Kellogg, Gary

2013-03-01

A worldwide effort is underway to learn how to build devices that take advantage of the remarkable electronic properties of graphene and other two-dimensional crystals. An outstanding question is how stacking two or a few such crystals affects their joint electronic behavior. Our talk concerns ``twisted bilayer graphene (TBG),'' that is, two graphene layers azimuthally misoriented. Applying angle-resolved photoemission spectroscopy and density functional theory, we have found van Hove singularities (vHs) and associated mini-gaps in the TBG electronic spectrum, which represent unambiguous proof that the layers interact. Of particular interest is that the measured and calculated electronic dispersion manifests the periodicity of the moiré superlattice formed by the twist. Thus, there are vHs not just where the Dirac cones of the two layers overlap, but also at the boundaries of the moiré superlattice Brillouin zone. Moirés, ubiquitous in hybrid solids based on two-dimensional crystals, accordingly present themselves as tools for manipulating the electronic behavior. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Work Function Engineering of Graphene

PubMed Central

Garg, Rajni; Dutta, Naba K.; Roy Choudhury, Namita

2014-01-01

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities. PMID:28344223

Work Function Engineering of Graphene.

PubMed

Garg, Rajni; Dutta, Naba K; Choudhury, Namita Roy

2014-04-03

Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities.

Mechanical control of the electro-optical properties of monolayer and bilayer BC3 by applying the in-plane biaxial strain

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2017-11-01

Recently, a new two-dimensional (2D) material, the 2D BC3 crystal, has been synthesized. Here, the mechanical control of the electro-optical properties of monolayer and bilayer BC3 by applying the biaxial strain is investigated. The electronic structure calculations showed that the strain-free monolayer and bilayer BC3 are indirect band-gap semiconductors with band gap of 0.62 and 0.29 eV, respectively, where the conduction band minimum (CBM) is at the M point whereas the valence band maximum (VBM) is at the Γ point. The doubly degenerated bands in the monolayer BC3 are splitted in the bilayer BC3 due to the interlayer interactions. Both monolayer and bilayer BC3 remain indirect gap semiconductor under biaxial tensile strain and their band gaps increases with strain. On the other hand, by increasing the magnitude of tensile strain, the optical spectra shift to the lower energies and the static dielectric constant increases. These findings suggest the potential of strain-engineered 2D BC3 in electronic and optoelectronic device applications.

Folding and stacking defects of graphene flakes probed by electron nanobeam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Persichetti, L.; Fanfoni, M.; Sgarlata, A.

2011-07-25

Combining nanoscale imaging with local electron spectroscopy and diffraction has provided direct information on folding and stacking defects of graphene flakes produced by unrolled multi-walled carbon nanotubes. Structural data obtained by nanoarea electron diffraction complemented with systematic electron energy loss spectroscopy measurements of the surface plasmon losses of single flakes show the presence of flat bilayer regions coexisting with folded areas where the topology of buckled graphene resembles that of warped carbon nanostructures.

STM on Gate-Tunable Graphene

NASA Astrophysics Data System (ADS)

Zhang, Yuanbo

2009-03-01

We have successfully performed atomically-resolved scanning tunneling microscopy and spectroscopy (STS) on mechanically exfoliated graphene samples having tunable back-gates. We have discovered that the tunneling spectra of graphene flakes display an unexpected gap-like feature that is pinned to the Fermi level for different gate voltages, and which coexists with another depression in density-of-states that moves with gate voltage. Extensive tests and careful analysis show that the gap-feature is due to phonon-assisted inelastic tunneling, and the depression directly marks the location of the graphene Dirac point. Using tunneling spectroscopy as a new tool, we further probe the local energetic variations of the graphene charge neutral point (Dirac point) to map out spatial electron density inhomogeneities in graphene. Such measurements are two orders of magnitude higher in resolution than previous experiments, and they can be directly correlated with nanometer scale topographic features. Based on our observation of energy-dependent periodic electronic interference patterns, our measurements also reveal the nature of impurity scattering of Dirac fermions in graphene. These results are significant for understanding the sources of electron density inhomogeneity and electron scattering in graphene, and the microscopic causes of graphene electron mobility.

Dynamic behavior of ultra large graphene-based membranes using electrothermal transduction

NASA Astrophysics Data System (ADS)

Al-mashaal, A. K.; Wood, G. S.; Torin, A.; Mastropaolo, E.; Newton, M. J.; Cheung, R.

2017-12-01

This letter reports an experimental study of an electrothermal actuator made from an ultra-large graphene-based bilayer thin film with a diameter to thickness aspect ratio of ˜10 000. Suspended thin films consisting of multilayer graphene and 350-500 nm-thick Poly(methyl methacrylate) have been transferred over circular cavities with a diameter of 3.5 mm. The use of bilayer materials with different mechanical and thermal properties results in thin film structures that can be induced to vibrate mechanically under the electrothermal transduction mechanism. The dynamic response of the bilayer has been investigated electrothermally by driving the structures with a combination of alternating current and direct current actuation voltages ( Va c and Vd c) and characterizing their resonant frequencies. It has been found that the bilayer thin film structure behaves as a membrane. In addition, the actuation configurations affect not only the amplitude of vibration but also the tuning of the resonant frequency of the vibrating membranes. The existence of Joule heating-induced tension lowers the mechanical stiffness of the membrane and hence shifts the resonant frequency downwards by -108187 ppm. A resonant frequency of 3.26 kHz with a vibration amplitude of 4.34 nm has been achieved for 350 nm-thick membranes under actuation voltages of 1 V of Va c and 8 V of Vd c.