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Sample records for gasb-based iii-v alloys

  1. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  2. Method for preparing homogeneous single crystal ternary III-V alloys

    DOEpatents

    Ciszek, Theodore F.

    1991-01-01

    A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

  3. Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Asai, Toshihiro; Dandy, David S.

    2000-10-01

    A thermodynamic analysis has been applied to systematically study III-V semiconductor alloy deposition, including nitrides grown by metalorganic vapor phase epitaxy. The predicted solid compositions of a number of ternary and quaternary alloys, including AlxGa1-xPyAs1-y, are compared with experimental data. For phosphorus-containing alloys, introduction of a parameter f representing incomplete PH3 pyrolysis yields good agreement with experimental data. It is shown that the input mole fraction of the group III metalorganic sources influences the incorporation of P into the solid for these alloys. Solid composition is also calculated for nitride alloys as a function of inlet gas concentration. To date, thermodynamic models have been applied solely to predict N solubility limits for nitride alloys where mixing occurs on the group V sublattice. The present model is used to predict N solid compositions in ternary and quaternary alloys, and it is demonstrated that these values are below the theoretical solubility limits for In-containing nitrides. The role of H2 in the carrier gas is investigated for III-N-V, III-III-N-V, and III-N-V-V systems.

  4. Structure Analysis of Composition Modulation in Epitaxially-Grown III-V Semiconductor Alloys

    NASA Astrophysics Data System (ADS)

    Ishimaru, Manabu; Hasegawa, Shigehiko; Asahi, Hajime; Sato, Kazuhisa; Konno, Toyohiko J.

    2013-11-01

    It has been reported that composition modulation is naturally formed in some of the epitaxially-grown thin films. Structural characterization of these materials is necessary for controlling their nanostructures precisely. Here, we prepared epitaxially-grown III-V semiconductor alloys and characterized their atomistic structures by means of diffraction crystallography and electron microscopy techniques. As a consequence, we found that the following quantum well structures are spontaneously formed: (1) ultrashort period lateral composition modulation (LCM) with a modulation period of ˜1 nm; (2) complex vertical composition modulated (VCM) structures consisting of two modulated structures with a different period (˜4 and ˜25 nm). The former LCM structure is created via nanoscale phase separation at the growth surface, while the shorter-period modulation in the later VCM structure is induced by rotating a substrate through an inhomogeneous distribution of the anion flux within a chamber.

  5. Surface atomic order of compound III-V semiconductor alloys at finite temperature

    NASA Astrophysics Data System (ADS)

    Thomas, John C.; Millunchick, Joanna Mirecki; Modine, Normand A.; van der Ven, Anton

    2009-09-01

    We investigate the role of alloying, atomic-size mismatch strain, and thermal effects on ordering and reconstruction stability of As-rich (2×4) surfaces on (InxGa1-x)As (001) ternary III-V alloys (in the dilute limit) using a first-principles cluster-expansion and Monte Carlo simulations. The cluster expansion accounts for configurational degrees of freedom associated with As dimer adsorption/desorption as well as Ga-In disorder in subsurface cation sites. We analyze the α2(2×4)-β2(2×4) transition at finite temperature and directly examine the entropy and cation-site filling in both reconstructions. A compositionally dependent “zigzag” ordering of dimers in the α2(2×4) is predicted as well as a hybrid α2(2×4)-β2(2×4) reconstruction, found to be stable in a reasonably large chemical-potential range. The hybrid dimer ordering drives pronounced nanoscale composition modulation of surface cations.

  6. Electron scattering by native defects in III-V nitrides and their alloys

    SciTech Connect

    Hsu, L.; Walukiewicz, W.

    1996-03-01

    We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al{sub x}Ga{sub 1-x}N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy.

  7. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    NASA Astrophysics Data System (ADS)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and

  8. Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

    1989-01-01

    The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

  9. Estimation of Bi induced changes in the direct E0 band gap of III-V-Bi alloys and comparison with experimental data

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-03-01

    Quantum dielectric Theory (QDT) is used to explain the band gap bowing effect observed in III-V-Bismides such as InSb1-xBix, InAs1-xBix, InP1-xBix, GaSb1-xBix, GaAs1-xBix and GaP1-xBix. The dependence of the direct E0 band gap for these alloys on Bi mole fraction is calculated using QDT which requires the evaluation of the bowing parameter c. The bowing parameter gives the deviation of the direct E0 band gap from the linear relationship of E0 with Bi mole fraction. The band gap reduction values obtained using QDT are compared with those calculated using Virtual Crystal approximation (VCA) and Valence Band Anticrossing (VBAC) model as well as with the reported experimental data and the results of the comparison shows excellent agreement.

  10. Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    CA Wang

    2004-05-06

    This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.

  11. Strain engineering of magnetic anisotropy: The epitaxial growth of cobalt-manganese-gallium Heusler alloy films on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Carr, David Michael

    This research is the first step towards manipulating thin film magnetic anisotropy through control of uniform epitaxial strain. Pseudomorphic Co 2MnGa films with thicknesses of 300 A have been grown on several III-V semiconductors to generate coherently-strained epitaxial films. Growth of Co2MnGa films at 200°C both directly on GaAs substrates and on thermodynamically stable Sc0.3Er0.7As interlayers resulted in similar physical and magnetic properties. The epitaxial strain generated an induced perpendicular anisotropy and magnetic stripe domains. This resulted in a reduced in-plane remnant magnetization, high coercivity, and a relatively low saturation field for the out-of-plane magnetization. For higher temperature growths, the interlayer was required to minimize interfacial reactions and maintain the magnetic properties of the films. When the growth temperature on the Sc0.3Er0.7As interlayers was increased from 0 to 400°C, the subsequent films had improved L21 atomic ordering, decreased out-of-plane lattice parameters, and enhanced strain-induced perpendicular anisotropy. Dramatic variations in the magnetic anisotropy were observed for films grown on different III-V semiconductors due to controlled strain-induced perpendicular anisotropy. For Co2MnGa films grown under tension on InP, the magnetization barely saturated out-of-plane with a field of 1.75 Tesla. These films displayed clear in-plane anisotropy and low coercivity switching. For films grown under compression on GaAs, the magnetization easily saturated out-of-plane with a field of a few thousand Oe. These films displayed no in-plane anisotropy in the hysteresis loops and had large coercivities. For comparison, bulk-like unstrained Co2MnGa films were grown on relaxed ErAs interlayers on InAs. These films displayed properties intermediate between films grown on GaAs and InP. Finally, growth of films on GaP resulted in partial relaxation, thereby reducing the induced perpendicular anisotropy and verifying

  12. Antimony Based III-V Thermophotovoltaic Devices

    SciTech Connect

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  13. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  14. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  15. III-V arsenide-nitride semiconductor

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  16. Hybrid III-V/silicon lasers

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  17. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  18. Preparation of III-V semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  19. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.

    1998-01-01

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

  20. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.

    1998-12-08

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

  1. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    DOEpatents

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  2. Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

    NASA Astrophysics Data System (ADS)

    Chizmeshya, Andrew; Kouvetakis, John

    2014-03-01

    Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

  3. High frequency III-V nanowire MOSFETs

    NASA Astrophysics Data System (ADS)

    Lind, Erik

    2016-09-01

    III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.

  4. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    NASA Astrophysics Data System (ADS)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  5. Critical thickness of atomically ordered III-V alloys

    SciTech Connect

    France, R. M.; McMahon, W. E.; Guthrey, H. L.

    2015-10-12

    The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic structure of an ordered material. The model is evaluated for dislocations gliding through CuPt-ordered GaInP and GaInAs, where the boundary energy is negative and the boundary is stable. With ordering present, the critical thickness is significantly lowered and remains finite as the mismatch strain approaches zero. The reduction in critical thickness is most significant when the order parameter is greatest and the amount of misfit energy is low. The modified model is experimentally validated for low-misfit GaInP epilayers with varying order parameters using in situ wafer curvature and ex situ cathodoluminescence. With strong ordering, relaxation begins at a lower thickness and occurs at a greater rate, which is consistent with a lower critical thickness and increased glide force. Thus, atomic ordering is an important consideration for the stability of lattice-mismatched devices.

  6. III-V High-Efficiency Multijunction Photovoltaics (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for III-V High-Efficiency Multijunction Photovoltaics at the National Center for Photovoltaics.

  7. Hot carrier relaxation in highly excited III V compounds

    NASA Astrophysics Data System (ADS)

    Kurz, H.; Kuett, W.; Seibert, K.; Strahnen, M.

    1988-04-01

    The transition from nonthermal to thermalized carrier distributions and their subsequent cooling via phonon emission is investigated in III-V compounds by time resolved optical measurements with femtosecond laser pulses.

  8. Progress Towards III-V Photovoltaics on Flexible Substrates

    NASA Technical Reports Server (NTRS)

    McNatt, Jeremiah S.; Pal, AnnaMaria T.; Clark, Eric B.; Sayir, Ali; Raffaelle, Ryne P.; Bailey, Christopher G.; Hubbard, Seth M.; Maurer, William F.; Fritzemeier, Les

    2008-01-01

    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

  9. Antisites in III-V semiconductors: Density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Tahini, H. A.; Schwingenschlögl, U.; Grimes, R. W.

    2014-07-01

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites ( III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites ( V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  10. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  11. III-V aresenide-nitride semiconductor materials and devices

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  12. FOREWORD: The physics of III-V nitrides The physics of III-V nitrides

    NASA Astrophysics Data System (ADS)

    Ridley, B. K.

    2009-04-01

    The evolution of semiconductor physics is driven by the increasing sophistication of the art of crystal growing and fabrication techniques. From Ge at the birth of the transistor, possibly the purest material ever grown, through Si, the work-horse of the crystal revolution, to the III-Vs, whose optical properties opened up a second front, namely, optoelectronics. Crystal growth with monolayer control gave us quantum wells, superlattices, quantum wires and quantum dots, along with the quantum Hall effect and quantized resistance. The potential for high-power devices triggered interest in the III-V nitrides with their large bandgaps. The nitrides mostly crystallize in the hexagonal form, and this has introduced the phenomenon of spontaneous polarization into mainstream semiconductor physics. Its effect manifests itself in huge electric fields in heterostructures like AlGaN/GaN which, in turn, causes the induction of substantial electron populations in the channel of a HFET without the need for doping. High-power microwave transistors have been successfully fabricated, even though there are features associated with spontaneous polarization that still needs clarifying. Another strange effect is the large electron population on the surface of InN. The lack of a suitable substrate for growing GaN has meant that the dislocation density is higher than we would wish, but that situation is expected to steadily improve. Given the current interest in the physics of nitrides, it is natural to come across a special issue devoted to this topic. The difficulty presented by the surface layer in InN in the attempt to measure transport properties is discussed in the paper by King et al. A property that can affect transport is the lifetime of optical phonons and its dependence on electron density. Measurements of phonon lifetime in InN are reported by Tsen and Ferry, and in GaN channels, via the measure of hot-electron fluctuations, by Matulionis. The dependence on electron density is

  13. Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-01-01

    Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure of Bi containing alloys such as InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix due to the incorporation of dilute concentrations of bismuth. The coupling parameter CBi which gives the magnitude of interaction of Bi impurity states with the LH, HH and SO sub bands in VBAC depends on the increase in the HH/LH related energy level EHH/LH+, location of the Bi related impurity level EBi and valence band offset ΔEVBM between the endpoint compounds in the corresponding III-V-Bi. The reduction in band gap as well as the enhancement of the spin-orbit splitting energy is well explained using this model and the calculated results are compared with the results of Virtual Crystal Approximation (VCA) and Density Functional Theory (DFT) calculations, as well as with the available experimental data and are found to have good agreement. The incorporation of Bi mainly perturbs the valence band due to the interaction of the Bi impurity states with the HH, LH and SO bands. The lowering of the conduction band minimum (CBM) due to VCA is added with the upward movement of the HH/LH bands to get the total reduction in band gap for the bismides. The valence band shifts of 31.9, 32.5, 20.8 and 12.4 meV/at%Bi for InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix respectively constitute 65, 76, 59 and 31% of the total band gap reduction and the rest is the contribution of the conduction band shift. The spin-orbit splitting energy also shows significant increase with the maximum change in InPBi and the minimum in InSbBi. The same is true for Ga containing bismides if we make a comparison with the available values for GaAsBi and GaPBi with that of GaSbBi. It has also been observed that the increase in splitting energy is greater in case of the bismides such as InAsBi, InPBi and GaAsBi than the bismides such as InSbBi and GaSbBi with the parent substrates having higher values of splitting energy. This may

  14. Investigation of new semiinsulating behavior of III-V compounds

    NASA Technical Reports Server (NTRS)

    Lagowski, Jacek

    1990-01-01

    The investigation of defect interactions and properties related to semiinsulating behavior of III-V semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations. The studies of new compensation mechanisms involving transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs, InP and also in ternary compounds InGaAs. The experimental data provided basis for the verification of chemical trends and the VRBE method. They also defined compositional range for III-V mixed crystals whereby semiinsulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/acceptor impurities.

  15. Novel integration technique for silicon/III-V hybrid laser.

    PubMed

    Dong, Po; Hu, Ting-Chen; Liow, Tsung-Yang; Chen, Young-Kai; Xie, Chongjin; Luo, Xianshu; Lo, Guo-Qiang; Kopf, Rose; Tate, Alaric

    2014-11-01

    Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique. PMID:25401832

  16. Large area III-V infrared focal planes

    NASA Astrophysics Data System (ADS)

    Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Nguyen, J.; Soibel, A.; Rafol, S. B.; Keo, S. A.; Mumolo, J. M.; Lee, M. C.; Liu, J. K.; Yang, B.; Liao, A.

    2011-05-01

    Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for remote sensing and imaging applications. Currently, we are working on Superlattice detectors, multi-band quantum well infrared photodetectors (QWIPs), and quantum dot infrared photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper, we will discuss the demonstration of long-wavelength 1 K × 1 K QDIP FPA, 1 K × 1K QWIP FPA, the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP FPA, and demonstration of the first mid-wave and long-wave 1K × 1K superlattice FPA. In addition, we will discuss the advantages of III-V material system in the context of large format infrared FPAs.

  17. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  18. TOPICAL REVIEW: Electrical magnetization reversal in ferromagnetic III V semiconductors

    NASA Astrophysics Data System (ADS)

    Chiba, D.; Matsukura, F.; Ohno, H.

    2006-07-01

    Introduction of a high concentration of manganese in III-V semiconductors, such as InAs and GaAs, results in carrier-induced ferromagnetism, which allows us to integrate ferromagnetism in nonmagnetic heterostructures and which modifies their magnetic properties through electric-field control of carrier concentration. The properties of ferromagnetism can in many cases be semi-quantitatively understood by the p-d Zener model, which is qualitatively different from conventional ferromagnetic metals. These ferromagnetic III-V semiconductors also offer the unique opportunity of examining spin-dependent phenomena observed so far only in metallic systems. Here, we review our experimental study on electrical manipulation of magnetization in these ferromagnetic III-V semiconductors. We first describe the results of electrically assisted magnetization reversal in ferromagnetic semiconductor (In, Mn)As field-effect transistor structures. The coercivity as well as ferromagnetic transition temperature can be controlled through the modification of carrier concentration by applied electric fields in a gated structure. We then present electrical magnetization reversal by spin-transfer torque exerted by spin-polarized currents at low threshold current density (~105 A cm-2) in (Ga, Mn)As-based magnetic tunnel junctions.

  19. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  20. Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics

    NASA Astrophysics Data System (ADS)

    Thathachary, Arun V.

    With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in transistor operating voltage to 0.5V or lower is urgently sought. This however implies a fundamental paradigm shift away from mature Silicon technology. III-V compound semiconductors hold great promise in this regard due to their vastly superior electron transport properties making them prime candidates to replace Silicon in the n-channel transistor. Among the plethora of binary and ternary compounds available in the III-V space, InxGa1-xAs alloys have attracted significant interest due to their excellent electron mobility, ideally placed bandgap and mature growth technology. Simultaneously, electrostatic control mandates multigate transistor designs such as the FinFET at extremely scaled nodes. This dissertation describes the experimental realization of III-V FinFETs incorporating InXGa1-XAs heterostructure channels for high performance, low power logic applications. The chapters that follow present experimental demonstrations, simulations and analysis on the following aspects (a) motivation and key figures of merit driving material selection and design; (b) dielectric integration schemes for high-k metal-gate stack (HKMG) realization on InXGa 1-XAs, including surface clean and passivation techniques developed for high quality interfaces; (c) novel techniques for transport (mobility) characterization in nanoscale multi-gate FET architectures with experimental demonstration on In0.7Ga0.3As nanowires; (d) Indium composition and quantum confined channel design for InXGa 1-XAs FinFETs and (e) InAs heterostructure designs for high performance FinFETs. Each chapter also contains detailed benchmarking of results against state of the art demonstrations in Silicon and III-V material systems. The dissertation concludes by assessing the feasibility of InXGa 1-XAs Fin

  1. Defect Analysis in III-V Semiconductor Thin Films Grown by Hydride Vapor Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Schulte, Kevin Louis

    Hydride vapor phase epitaxy (HVPE) is an epitaxial growth technique renowned for its ability to grow III-V semiconductors at high growth rates using lower cost reagents compared to metal-organic vapor phase epitaxy (MOVPE), the current industry standard. Recent interest in III-V photovoltaics has led to increased attention on HVPE. While the technique came to maturity in the 70s, much is unknown about how defects incorporate in HVPE-grown materials. Further understanding of how defects incorporate in III-V materials grown by HVPE is necessary to facilitate wider adoption of the technique. This information would inform strategies for minimizing and eliminating defects in HVPE materials, allowing for the formation of high performance devices. This investigation presents a study of multiple defects in III-V semiconductors grown by HVPE in the context of specific device applications, spanning point defects comprised of individual atoms to extended defects which propagate throughout the crystal. The incorporation of the arsenic anti-site defect, AsGa, intrinsic point defect was studied in high growth rate GaAs layers with potential photovoltaic applications. Relationships between growth conditions and incorporation of AsGa in GaAs epilayers were determined. The incorporation of AsGa depended strongly on the growth conditions employed, and a model was developed to predict the concentration of anti-site defects as a function of those growth conditions. Dislocations and anti-phase domain boundaries (APDBs), two types of extended defects, were investigated in the heteroepitaxial GaAs/Ge system. It was found that the use of 6° miscut substrates and specific growth temperatures led to elimination of APDBs. Dislocation densities were reduced through the use of high growth temperatures. The third and final application investigated was the growth of InxGa1-xAs metamorphic buffer layers (MBLs) by HVPE. The relationships between the growth conditions and the alloy composition

  2. A model describing the pressure dependence of the band gap energy for the group III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Wei, Tong; Sun, Xiao-Dong; Wang, Sha-Sha; Lu, Ke-Qing

    2016-08-01

    A model describing the pressure dependence of the band gap energy for the group III-V semiconductors has been developed. It is found that the model describes the pressure dependence of the band gap energy very well. It is also found that, although the pressure dependence of the band gap energy for both the conventional III-V semiconductors and the dilute nitride alloys can be described well by the model in this work, the physical mechanisms for them are different. In addition, the influence of the nonlinear compression of the lattice on the band gap energy is smaller than that of the coupling interaction between the N level and the conduction band minimum of the host material.

  3. Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport

    SciTech Connect

    Boucher, Jason W.; Greenaway, Ann L.; Ritenour, Andrew J.; Davis, Allison L.; Bachman, Benjamin F.; Aloni, Shaul; Boettcher, Shannon W.

    2015-06-14

    Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III-V photovoltaics, particularly if growth on Si substrates can be demonstrated. We present preliminary results of the growth of GaAs1-xPx with x ≈ 0.3 and 0.6, showing that CSVT can be used to produce III-V-V’ alloys with band gaps suitable for tandem devices. Additionally, we have grown GaAs on Si by first thermally depositing films of Ge and subsequently depositing GaAs by CSVT. Patterning the Ge into islands prevents cracking due to thermal mismatch and is useful for potential tandem structures.

  4. III-V Infrared Research at the Jet Propulsion Laboratory

    NASA Technical Reports Server (NTRS)

    Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Soibel, A.; Liu, John; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Nguyen, J.; Bandara, S. V.; Tidrow, M. Z.

    2009-01-01

    Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.

  5. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  6. Prospects of III-V Tunnel FETs for Logic Applications

    NASA Astrophysics Data System (ADS)

    Datta, Suman

    2015-03-01

    In order to continue and maintain the pace of energy efficient transistor scaling, it is imperative to scale the supply voltage of operation concurrently. In this invited paper, we discuss a promising III-V device architecture such as III-V Heterojunction Tunnel FETs that may break the seemingly inflexible energy vs. performance limit of silicon CMOS transistors and provide high performance, low leakage and low operating voltage for future logic transistor technology. Unlike conventional MOSFETs, the Tunnel FET (TFET) architecture employs a gate modulated Zener tunnel junction at the source which controls the transistor ON and OFF states. This scheme fundamentally eliminates the high-energy tail present in the Fermi-Dirac distribution of the valence band electrons in the p + source region and allows sub-kT/q steep slope device operation near the OFF state. This allows Tunnel FETs to achieve a much higher ION -IOFF ratio over a small gate voltage swing. A major challenge in the demonstration of high performance Tunnel FET is the limited rate of tunneling across the Zener junction which results in low drive current. Our results show, for the first time, that the on-current bottleneck in Tunnel FETs can be overcome by careful bandgap engineering. This work is supported by Intel, NRI/SRC and NSF through ASSIST NERC.

  7. Combinatorial approaches to understanding polytypism in III-V nanowires.

    PubMed

    Johansson, Jonas; Bolinsson, Jessica; Ek, Martin; Caroff, Philippe; Dick, Kimberly A

    2012-07-24

    Polytypism in III-V semiconductor nanowires is a topic that has received considerable attention in recent years. Achieving a pure nanowire crystal phase requires well-controlled and advanced parameter tuning for most III-V materials. Additionally, the new and unusual phases sometimes observed may present unique material properties if they can be controllably fabricated. With the prospect of using nanowires in applications within several different fields (including electronics, photonics, and life science), theoretical models are necessary to explain experimental trends and to attain a high level of crystal phase control. At present, there is no theoretical model (or combination of models) that fully explains how and why nanowire crystal structures commonly include several different polytypes. Here we use combinatorics and interlayer interactions to include higher order polytypes (4H and 6H) with the aim to explain nanowire crystal structure beyond the well-investigated zinc blende-wurtzite polytypism. Predictions from our theoretical models compare well with experimental results. PMID:22681568

  8. DX centers in III-V semiconductors under hydrostatic pressure

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si{sub Ga} shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  9. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

    SciTech Connect

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori; Freeman, Arthur J.

    2014-03-31

    The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal Al{sub x}Ga{sub 1−x}P and Al{sub x}Ga{sub 1−x}As alloys, respectively, leads to a direct transition with a gap energy of ∼2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

  10. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  11. III-V nitride semiconductors for solar hydrogen production

    NASA Astrophysics Data System (ADS)

    Parameshwaran, Vijay; Gallinat, Chad; Enck, Ryan W.; Sampath, Anand V.; Shen, Paul H.; Kuykendall, Tevye; Aloni, Shaul; Wraback, Michael; Clemens, Bruce M.

    2012-06-01

    Photoelectrochemical cells are devices that can convert solar radiation to hydrogen gas through a water decomposition process. In this process, energy is converted from incident photons to the bonds of the generated H2 molecules. The solar radiation absorption, electron-hole pair splitting, and photoelectrolysis half reactions all occur in the vicinity of the electrode-electrolyte interface. As a result, engineering the electrode material and its interaction with the electrolyte is important in investigating and improving the energy conversion process in these devices. III-V nitride materials are promising candidates for photoelectrochemical energy applications. We demonstrate solar-to-hydrogen conversion in these cells using p-type GaN and n-type InGaN as a photocathode and photoanode material, respectively. Additionally, we demonstrate heteroepitaxial MOCVD growth of GaP on Si, enabling future work in developing GaPN as a photocathode material.

  12. III-V Compound Detectors for CO2 DIAL Measurements

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Ismail, Syed; Singh, Upendra N.

    2005-01-01

    Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

  13. Effect of III-V on insulator structure on quantum well intermixing

    NASA Astrophysics Data System (ADS)

    Takashima, Seiya; Ikku, Yuki; Takenaka, Mitsuru; Takagi, Shinichi

    2016-04-01

    To achieve the monolithic active/passive integration on the III-V CMOS photonics platform, quantum well intermixing (QWI) on III-V on insulator (III-V-OI) is studied for fabricating multi-bandgap III-V-OI wafers. By optimizing the QWI condition for a 250-nm-thick III-V layer, which contains a five-layer InGaAsP-based multi-quantum well (MQW) with 80-nm-thick indium phosphide (InP) cladding layers, we have successfully achieved a photoluminescence (PL) peak shift of over 100 nm on the III-V-OI wafer. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and handle wafers. We have also found that the progress of QWI on the III-V-OI wafer is slower than that on the InP bulk wafer regardless of the buried oxide (BOX) thickness, bonding interface materials, and bulk support wafers on which the III-V-OI structure is formed (handle wafers). By comparing between the measured PL shift and simulated diffusions of phosphorus vacancies and interstitials during QWI, we have found that the slow QWI progress in the III-V-OI wafer is probably attributed to the enhanced recombination of vacancies and interstitials by the diffusion blocking of vacancies and interstitials at the BOX interface.

  14. Status of ion implantation doping and isolation of III-V nitrides

    SciTech Connect

    Zolper, J.C.; Pearton, S.J.; Abernathy, C.R.

    1995-09-01

    Ion implantation doping and isolation has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and AlN) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. With this in mind, we review the status of implant doping and isolation of GaN and the ternary alloys AlGaN, InGaN, and InAlN. In particular, we reported on the successful n- and p-type doping of GaN by ion implantation of Mg+P and Si, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000{degrees}C. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N or F implantation.

  15. Demonstration of heterogeneous III-V/Si integration with a compact optical vertical interconnect access.

    PubMed

    Ng, Doris Keh Ting; Wang, Qian; Pu, Jing; Lim, Kim Peng; Wei, Yongqiang; Wang, Yadong; Lai, Yicheng; Ho, Seng Tiong

    2013-12-15

    Heterogeneous III-V/Si integration with a compact optical vertical interconnect access is fabricated and the light coupling efficiency between the III-V/Si waveguide and the silicon nanophotonic waveguide is characterized. The III-V semiconductor material is directly bonded to the silicon-on-insulator (SOI) substrate and etched to form the III-V/Si waveguide for a higher light confinement in the active region. The compact optical vertical interconnect access is formed through tapering a III-V and an SOI layer in the same direction. The measured III-V/Si waveguide has a light coupling efficiency above ~90% to the silicon photonic layer with the tapering structure. This heterogeneous and light coupling structure can provide an efficient platform for photonic systems on chip, including passive and active devices.

  16. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  17. Dopant Profiling of III-V Nanostructures for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Ford, Alexandra Caroline

    2011-12-01

    High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons) on SiO2/Si are investigated as the channel material for high performance field-effect transistors (FETs) and post-growth, patterned doping techniques are demonstrated. First, the synthesis of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on SiO 2/Si substrates is demonstrated. The back-gated InAs nanowire FETs have electron field-effect mobilities of ˜4,000 cm2/Vs and ION/IOFF ˜104. The uniformity of the InAs nanowires is demonstrated by large-scale assembly of parallel arrays of nanowires (˜400 nanowires) on SiO2/Si substrates by a contact printing process. This enables high performance, "printable" transistors with 5--10 mA ON currents. Second, an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on SiO2/Si substrates is demonstrated. As a parallel to silicon-on-insulator (SOI) technology, the abbreviation "XOI" is used to represent this compound semiconductor-on-insulator platform. A high quality InAs/dielectric interface is obtained by the use of a thermally grown interfacial InAsOx layer (˜1 nm thick). Top-gated FETs exhibit a peak transconductance of ˜1.6 mS/microm at V DS=0.5V with ION/I OFF >104 and subthreshold swings of 107--150 mV/decade for a channel length of ˜0.5 microm. Next, temperature-dependent I-V and C-V studies of single InAs nanowire FETs are

  18. Spectroscopic characterization of III-V semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  19. Thermal conductivity of III-V semiconductor superlattices

    SciTech Connect

    Mei, S. Knezevic, I.

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  20. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    NASA Astrophysics Data System (ADS)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  1. Antisites in III-V semiconductors: Density functional theory calculations

    SciTech Connect

    Chroneos, A.; Tahini, H. A.; Schwingenschlögl, U.; Grimes, R. W.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  2. Stable Self-Catalyzed Growth of III-V Nanowires.

    PubMed

    Tersoff, J

    2015-10-14

    Nanowire growth has generally relied on an initial particle of a catalyst such as Au to define the wire diameter and stabilize the growth. Self-catalyzed growth of III-V nanowires avoids the need for a foreign element, with the nanowire growing from the vapor via a droplet of the native group-III liquid. However, as suggested by Gibbs' phase rule, the absence of third element has a destabilizing effect. Here we analyze this system theoretically, finding that growth can be dynamically stable at pressures far above the equilibrium vapor pressure. Steady-state growth occurs via kinetic self-regulation of the droplet volume and wire diameter. In particular, for a given temperature and source-gas pressures there is a unique stable wire diameter and droplet volume, both of which decrease with increasing V/III ratio. We also examine the evolution of the droplet size and wire diameter toward the steady state as the wire grows and discuss implications for structural control. PMID:26389697

  3. Electrical characterization of surface passivation in III-V nanowires

    NASA Astrophysics Data System (ADS)

    Holloway, Gregory; Lapierre, Ray; Baugh, Jonathan

    III-V nanowires are promising for implementing many useful technologies including optical sensing and quantum information processing. However, most native nanowires have a significant density of surface states, which cause electron accumulation at the surface and make the optoelectronic characteristics very sensitive to surface conditions and variable from device to device. To achieve optimum device performance it is imperative to decrease the density of these defects, since they are responsible for charge noise (e.g. random telegraph noise) and decreased carrier mobility. Here we report on experimental results from low temperature transport studies of a series of InAs nanowire field effect transistors, each fabricated with a different surface passivation technique. The different surface treatments include combinations of chemical passivation, growth of a thermal oxide, and deposition of a high-k dielectric to determine the optimum process for passivating the surface states. To better quantify the density of surface states, we also study the axial field magnetoconductance of short-channel nanowire transistors, and show how the results can be used to estimate the degree of surface band-bending.

  4. Thermal oxidation of III-V compound semiconductors

    SciTech Connect

    Neto, O.R.M.

    1988-11-01

    Thermal oxidation of III-V compound semiconductors has been studied in the temperature range of 300/degree/C to 600/degree/C. Two members of this class of materials, namely InP and GaAs, were the object of the experimental work carried out here. The main analytical tools used were transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS). TEM was employed to access microstructural changes and SIMS to access the composition redistribution that takes place as a consequence of the oxidation reaction. Below 400/degree/C oxidation of both materials led to the formation of amorphous scales, which consisted of a mixture of gallium and arsenic oxides in the case of GaAs, and indium phosphate and oxide in the case of InP. The oxidation kinetics of InP was found to be slower than that of GaAs. In the high temperature regime, i.e., above 400/degree/C, the oxidation of both materials resulted in crystalline products. Precipitation of the group V element at the scale/semiconductor interface took place during oxidation. At the GaAs/Ga/sub 2/O/sub 3/interface, As precipitates were formed with a truncated square pyramid shape bound by /l brace/111/r brace//sub GaAs/ planes. The precipitates found at the InPO/sub 4//InP interface were either a phosphorus rich phase or red phosphorus. Strong vaporization under the electron beam prohibited a more accurate determination. The morphology of those precipitates were very similar to the As ones in GaAs. 83 refs., 48 figs., 6 tabs.

  5. Micro-Hall magnetic sensors with high magnetic sensitivity based on III-V heterostructures

    NASA Astrophysics Data System (ADS)

    Del Medico, S.; Benyattou, Taha; Guillot, Gerard; Venet, T.; Gendry, Michel; Tardy, Jacques; Chovet, Alain

    1996-04-01

    In this work, we propose solutions based on engineering of III-V heterostructures to develop new types of semiconductor magnetic sensors. These micro-Hall sensors use the properties of a 2D electron gas and the benefit of pseudomorphic material, in which both the alloy composition and the built-in strain offer additional degrees of freedom for band structure tailoring, to exhibit high magnetic sensitivity, good linearity, low temperature coefficient and high resolution. With the growth optimization which is described, two pseudomorphic In0.75Ga0.25As/In0.52Al0.48As heterostructures were grown on a semi- insulating InP substrate by molecular beam epitaxy. To understand better the influence of the heterostructure design on its electronic properties, a model involving the self-consistent solution of the Poisson and Schrodinger equations using the Fermi-Dirac statistics has been developed. These results have been used to optimize the structure design. A magnetic sensitivity of 346 V/AT with a temperature coefficient of -230 ppm/ degree(s)C between -80 degree(s)C and 85 degree(s)C has been obtained. The device show good linearity against magnetic field and also against the supply current. High signal-to-noise ratios corresponding to minimal magnetic field of 350 nT/Hz1/2 at 100 Hz and 120 nT/Hz1/2 at 1 kHz have been measured.

  6. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    NASA Astrophysics Data System (ADS)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  7. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    PubMed Central

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  8. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.

    PubMed

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-02-11

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called "Si photonics"). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  9. Vibrational, mechanical, and thermal properties of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1989-02-01

    Theories of the mechanical, vibrational, and electronic properties of 3 to 5 semiconductors were developed and applied to: (1) help determine the feasibility of InN-based visible and ultraviolet lasers and light detectors, (2) develop a theory of phonons in semiconductor alloys, (3) understand surface reconstruction of semiconductors, (4) predict the effects of atomic correlations on the light-scattering (Raman) properties of semiconductive alloys, (5) develop a new first principles pseudo-function implementation of local-density theory, (6) study the oxidation of GaAs, (7) develop a theory of scanning tunneling microscope images, and (8) understand the electronic and optical properties of highly strained artificial semiconductors and small semiconductor particles.

  10. Effects of Humidity on Non-Hermetically Packaged III-V Structures and Devices

    NASA Technical Reports Server (NTRS)

    Leon, R.; Martin, S.; Lee, T.; Okuno, J.; Ruiz, R.; Gauldin, R.; Gaidis, M.; Smith, R.

    1999-01-01

    High humidity and temperature test (known as 85/85 tests) were performed on various III-V devices and structures to determine environmental effects in non-hermetically packaged GaAs membrane mixer diodes.

  11. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    SciTech Connect

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  12. Precise measurement of charged defects in III-V compounds (supplement 2)

    NASA Technical Reports Server (NTRS)

    Soest, J. F.

    1973-01-01

    Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.

  13. Epitaxial growth of III-V compounds for electroluminescent light sources

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Smeltzer, R. K.

    1973-01-01

    The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

  14. Investigation of III-V semiconductor heterostructures for post-Si-CMOS applications

    NASA Astrophysics Data System (ADS)

    Bhatnagar, Kunal

    Silicon complementary metal-oxide-semiconductor (CMOS) technology in the past few decades has been driven by aggressive device scaling to increase performance, reduce cost and lower power consumption. However, as devices are scaled below the 100 nm region, performance gain has become increasingly difficult to obtain by traditional scaling. As we move towards advanced technology nodes, materials innovation and physical architecture are becoming the primary enabler for performance enhancement in CMOS technology rather than scaling. One class of materials that can potentially result in improved electrical performance are III-V semiconductors, which are ideal candidates for replacing the channel in Si CMOS owing to their high electron mobilities and capabilities for band-engineering. This work is aimed towards the growth and characterization of III-V semiconductor heterostructures and their application in post-Si-CMOS devices. The two main components of this study include the integration of III-V compound semiconductors on silicon for tunnel-junction Esaki diodes, and the investigation of carrier transport properties in low-power III-V n-channel FETs under uniaxial strain for advanced III-V CMOS solutions. The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of the Si technology with the superior performance of III-V materials. We have demonstrated high quality epitaxial growth of GaAs and GaSb on Si (001) wafers through the use of various buffer layers including AlSb and crystalline SrTiO3. These GaSb/Si virtual substrates were used for the fabrication and characterization of InAs/GaSb broken-gap Esaki-tunnel diodes as a possible solution for heterojunction Tunnel-FETs. In addition, the carrier transport properties of InAs channels were evaluated under uniaxial strain for the potential use of strain solutions in III-V CMOS.

  15. III-V/Ge channel MOS device technologies in nano CMOS era

    NASA Astrophysics Data System (ADS)

    Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru

    2015-06-01

    CMOS utilizing high-mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high-performance and low power advanced LSIs in the future, because of its enhanced carrier transport properties. However, there are many critical issues and difficult challenges for realizing III-V/Ge-based CMOS on the Si platform such as (1) the formation of high-crystal-quality Ge/III-V films on Si substrates, (2) gate stack technologies to realize superior MOS/MIS interface quality, (3) the formation of a source/drain (S/D) with low resistivity and low leakage current, (4) process integration to realize ultrashort channel devices, and (5) total CMOS integration including Si CMOS. In this paper, we review the recent progress in III-V/Ge MOS devices and process technologies as viable approaches to solve the above critical problems on the basis of our recent research activities. The technologies include MOS gate stack formation, high-quality channel formation, low-resistance S/D formation, and CMOS integration. For the Ge device technologies, we focus on the gate stack technology and Ge channel formation on Si. Also, for the III-V MOS device technologies, we mainly address the gate stack technology, III-V channel formation on Si, the metal S/D technology, and implementation of these technologies into short-channel III-V-OI MOSFETs on Si substrates. On the basis of the present status of the achievements, we finally discuss the possibility of various CMOS structures using III-V/Ge channels.

  16. III-V/Ge MOS device technologies for low power integrated systems

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

    2016-11-01

    CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

  17. Direct growth of single-crystalline III-V semiconductors on amorphous substrates.

    PubMed

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager Iii, Joel W; Chrzan, Daryl C; Javey, Ali

    2016-01-01

    The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth. PMID:26813257

  18. Direct growth of single-crystalline III-V semiconductors on amorphous substrates

    NASA Astrophysics Data System (ADS)

    Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager, Joel W., III; Chrzan, Daryl C.; Javey, Ali

    2016-01-01

    The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

  19. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    NASA Astrophysics Data System (ADS)

    Tamboli, Adele C.; van Hest, Maikel F. A. M.; Steiner, Myles A.; Essig, Stephanie; Perl, Emmett E.; Norman, Andrew G.; Bosco, Nick; Stradins, Paul

    2015-06-01

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm2 for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga0.5In0.5P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  20. Predicted band structures of III-V semiconductors in the wurtzite phase

    SciTech Connect

    De, A.; Pryor, Craig E.

    2010-04-15

    While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier ab initio calculations, and where experimental results are available (InP, InAs, and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may facilitate the development of spin-based devices.

  1. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    SciTech Connect

    Tamboli, Adele C. Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul; Perl, Emmett E.

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  2. Dislocation effects in FinFETs for different III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-04-01

    While Si-based devices are facing the limits of scaling, III-V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III-V compound semiconductors.

  3. The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots.

    PubMed

    Franke, Daniel; Harris, Daniel K; Xie, Lisi; Jensen, Klavs F; Bawendi, Moungi G

    2015-11-23

    Control of quantum dot (QD) precursor chemistry has been expected to help improve the size control and uniformity of III-V QDs such as indium phosphide and indium arsenide. Indeed, experimental results for other QD systems are consistent with the theoretical prediction that the rate of precursor conversion is an important factor controlling QD size and size distribution. We synthesized and characterized the reactivity of a variety of group-V precursors in order to determine if precursor chemistry could be used to improve the quality of III-V QDs. Despite slowing down precursor conversion rate by multiple orders of magnitude, the less reactive precursors do not yield the expected increase in size and improvement in size distribution. This result disproves the widely accepted explanation for the shortcoming of current III-V QD syntheses and points to the need for a new generalizable theoretical picture for the mechanism of QD formation and growth.

  4. Methods for forming group III-V arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  5. Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

    SciTech Connect

    Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.; Woodhouse, Michael; van Hest, Maikel F. A. M.; Norman, Andrew G.; Steiner, Myles A.; Stradins, Paul

    2015-06-14

    Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.

  6. III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

    SciTech Connect

    Prucnal, Slawomir Zhou, Shengqiang; Ou, Xin; Facsko, Stefan; Oskar Liedke, Maciej; Bregolin, Felipe; Liedke, Bartosz; Grebing, Jochen; Fritzsche, Monika; Hübner, Rene; Mücklich, Arndt; Rebohle, Lars; Skorupa, Wolfgang; Helm, Manfred; Turek, Marcin; Drozdziel, Andrzej

    2014-02-21

    The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.

  7. Heterogeneous integration of SiGe/Ge and III-V for Si photonics

    NASA Astrophysics Data System (ADS)

    Takenaka, Mitsuru; Kim, Younghyun; Han, Jaehoon; Kang, Jian; Ikku, Yuki; Cheng, Yongpeng; Park, Jinkwon; Takagi, Shinichi

    2016-05-01

    The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

  8. Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding.

    PubMed

    Bougot-Robin, Kristelle; Talneau, Anne; Benisty, Henri

    2014-09-22

    Oxide-free bonding of a III-V active stack emitting at 1300-1600 nm to a silicon-on-insulator wafer offers the capability to electrically inject lasers from the silicon side. However, a typical 500-nm-thick silicon layer notably attracts the fundamental guided mode of the silicon + III-V stack, a detrimental feature compared to established III-V Separate-Confinement Heterostructure (SCH) stacks. We experimentally probe with photoluminescence as an internal light source the guiding behavior for oxide-free bonding to a nanopatterned silicon wafer that acts as a low-index barrier. We use a sub-wavelength square array of small holes as an effective "low-index silicon" medium. It is weakly modulated along one dimension (superperiodic array) to outcouple the resulting guided modes to free space, where we use an angle-resolved spectroscopy study. Analysis of experimental branches confirms the capability to operate with a fundamental mode well localized in the III-V heterostructures.

  9. Monolithic III-V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Li, Ning; Liu, Ke; Sorger, Volker J.; Sadana, Devendra K.

    2015-09-01

    Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III-V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III-V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III-V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes.

  10. Mexican Americans. An Appendix to "A Curriculum Guide in Spanish (Levels III-V)".

    ERIC Educational Resources Information Center

    Kennedy, Dora F.

    This teaching and resource unit on Mexican Americans is specifically designed for advanced Spanish students. Though it is presented mostly in English, it is to be implemented for the most part in Spanish, according to the methodology set forth in "A Curriculum Guide in Spanish (Levels III-V)." The main purpose of the unit is to increase student…

  11. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    NASA Astrophysics Data System (ADS)

    Li, Kan; Xing, Yingjie; Xu, H. Q.

    2016-06-01

    Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  12. Heterogeneous integration of a III-V VCSEL light source for optical fiber sensing.

    PubMed

    Li, Hongqiang; Ma, Xiangdong; Yuan, Danyang; Zhang, Zanyun; Li, Enbang; Tang, Chunxiao

    2016-09-15

    We propose a fiber Bragg grating (FBG) sensor interrogation system utilizing a III-V vertical cavity surface emitting laser (VCSEL) as the on-chip light source. Binary blazed grating (BBG) for coupling between III-V VCSEL and silicon-on-insulator (SOI) waveguides is demonstrated for interrogation of the FBG sensor. The footprint size of the BBG is only 5.62  μm×5.3  μm, and each BBG coupler period has two subperiods. The diameter of the VCSEL's emitting window is 5 μm, which is slightly smaller than that of the BBG coupler, to be well-matched with the proposed structure. Results show that the coupling efficiency from vertical cavities of the III-V VCSEL to the in-plane waveguides reached as high as 32.6% when coupling the 1550.65 nm light. The heterogeneous integration of the III-V VCSEL and SOI waveguides by BBG plays a fundamental role in inducing a great breakthrough to the miniaturization of an on-chip light source for optical fiber sensing. PMID:27628346

  13. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si.

    PubMed

    Svensson, Johannes; Dey, Anil W; Jacobsson, Daniel; Wernersson, Lars-Erik

    2015-12-01

    III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal-oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I(on)/I(off) ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we demonstrate fundamental CMOS logic gates, such as inverters and NAND gates, which illustrate the viability of our approach for large scale III-V MOSFET circuits on Si. PMID:26595174

  14. Optical and Magnetic Resonance Studies of Defects in Iii-V Compound Semiconductors.

    NASA Astrophysics Data System (ADS)

    Sun, Honjiang

    This dissertation describes experimental studies of the basic properties of impurities and defects in III -V compound semiconductors, using a variety of optical and magnetic resonance techniques. The materials used include InP, GaP, and the Al-GaAs alloy. The methods of investigation include absorption, PL, laser spectroscopy, polarization, electron-irradiation, MCD, ODMR, and ODENDOR. The ODENDOR technique is used to investigate a phosphorus antisite-related defect in as-grown p-type GaP. The defect has been previously identified as arising from an excited S = 1 state via luminescence at ~ 1.1eV. It is established that the observed ODENDOR transitions arise from the M_{s} = 0 state, causing unusual magnetic field and orientation effects. Analysis to high-order perturbation theory and/or matrix diagonalization is required. Hyperfine interactions with the central P and several shells of both P and Ga neighbors are observed confirming that the defect has a P_{Ga}-Y_ {p} structure and that the electronic wave function is highly localized. Two antisite structures in InP have been observed and identified using ODENDOR investigation. One of these is the isolated P_{In} antisite previously studied in as-grown and electron-irradiated p-type InP. Another is the perturbed one observed only in electron-irradiated InP. The energy position of the P_sp{In}{+}/P_sp {In}{++}<=vel of the isolated antisite is estimated to be E_{V} + 1.1 +/- 0.05 eV and that of the P_sp{In}{0}/P _sp{In}{+}<=vel is estimated to be E_{V} + 1.39 +/- 0.01 eV. The dependence of the ODENDOR signals of the perturbed antisite on irradiation dose, detection wavelength, and illumination suggests that at least two slightly different such defects are present after the electron irradiation. Our results indicate that the defects are produced by the electron irradiation and are not initially present in the as-grown materials. In as-grown n-type InP:Sn, a broad (Delta B = 360G), structureless, and isotropic g = 1

  15. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    PubMed

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  16. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1990-01-01

    The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).

  17. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  18. Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing.

    PubMed

    Dhoore, Sören; Uvin, Sarah; Van Thourhout, Dries; Morthier, Geert; Roelkens, Gunther

    2016-06-13

    We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits. PMID:27410317

  19. The Physics of III-V Heterojunction Devices in Wireless Communications

    NASA Astrophysics Data System (ADS)

    Johnson, Karl

    2003-03-01

    III-V heterojunction devices have become pervasive in wireless communication appliances. In particular, the low voltage, high efficiency power amplifier transmitters in cellular phones are dominated by heterojunction bipolar transistors (HBT), psuedomorphic high electron mobility transistors (pHEMT) and heterojunction field effect transistors (HFET). Further, these III-V heterojunction devices are also appearing in infrastructure applications such as cellular base stations, wireless local area network (WLAN) and cable television (CATV) line amplifiers. The design of these devices requires unique band gap engineering in order to meet the cost, performance and ruggedness in the linear and saturated power modes required by today's cellular modulation protocols. This presentation will address the physics behind the design, development and operation of these technologies leading to their optimization for the wireless market place.

  20. To the understanding of the formation of the droplet-epitaxial III-V based nanostructures

    SciTech Connect

    Nemcsics, Ákos

    2014-05-15

    In this work, we discuss the evolution of the self-assembling III-V based nanostructures. These nano-structures were prepared by droplet epitaxial technique. The different nanostructures such as quantum dot, quantum ring, double quantum ring, or nanohole form similarly from an initial Ga droplet but under different substrate temperature and various arsenic pressures. Started from few atomic courses, we give here a qualitative description of the key processes for all of the aforementioned nanostructures.

  1. Power-efficient III-V/silicon external cavity DBR lasers.

    PubMed

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M

    2012-10-01

    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  2. Studies of the III-V compounds in the megabar regime. Technical progress report

    SciTech Connect

    Ruoff, A.L.

    1992-09-01

    In this project we develop techniques for making high pressure measurements (x-ray diffraction and optical measurements) on samples in the multimegabar regime and we make systematic studies of the crystal structure of III-V compounds and other materials as a function of pressure with the broad objective of providing experimental data over a broad range of coordination number and interatomic spacing which can play a leading role in the testing and development of theoretical models of binding.

  3. Improved Precursor Chemistry for the Synthesis of III-V Quantum Dots

    PubMed Central

    Harris, Daniel K.; Bawendi, Moungi G.

    2012-01-01

    The synthesis of III-V Quantum Dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide quantum dots indeed improves with decreased precursor reactivity. PMID:23228014

  4. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  5. Device physics studies of III-V and silicon MOSFETs for digital logic

    NASA Astrophysics Data System (ADS)

    Pal, Himadri Sekhar

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials is investigated by analyzing the semiconductor capacitance for different device structures and scaling. Solid solubility limit of dopants in the III-V materials are also significantly lower than that in Si, causing high series resistance, and transconductance degradation due to source exhaustion. The metallic source/drain Schottky barrier MOSFET is explored as an alternative to effectively eliminate these issues. The performance of a Si channel SOI MOSFET fabricated at IBM is analyzed and interpreted using ballistic transport. The ballistic ratio and extracted mean free paths demonstrate that scattering effects cannot be ignored in modern Si channel devices. Scattering has been implemented within the non-equilibrium Green's function (NEGF) framework to investigate effects of phonon and surface roughness scattering on device performance. The computational complexity is greatly reduced by analytically integrating over the transverse (width) dimension, making it possible to include scattering in planar FETs. The model has been carefully benchmarked with analytical formulas and Boltzmann transport calculations (2-D Monte Carlo results) for simple potential profiles. The scattering model is used to study the role of phonon scattering on the on-state characteristics of Si channel devices. Finally, the role of surface roughness scattering and its implementation issues within NEGF is discussed.

  6. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    NASA Astrophysics Data System (ADS)

    Kunert, B.; Guo, W.; Mols, Y.; Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K.

    2016-08-01

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  7. Theoretical consideration of III-V nanowire/Si triple-junction solar cells.

    PubMed

    Wen, Long; Li, Xinhua; Zhao, Zhifei; Bu, Shaojiang; Zeng, XueSong; Huang, Jin-hua; Wang, Yuqi

    2012-12-21

    In this paper, we report theoretical consideration and simulation of a proposed III-V nanowire (NW)/Si triple-junction solar cell. The cell consists of two axially connected III-V NW subcells that are grown and electrically integrated on an active Si substrate. The optical properties of the cell are thoroughly analyzed by using the finite-difference time-domain method. It is found that NW subcells with optimized geometry have high absorption throughout their absorption region. Meanwhile, beyond the absorption edge of the top and middle NW subcells, the NWs act as an efficient antireflection coating for the bottom Si subcell due to the formation of an optical cavity within the NW layer. The physics responsible for the enhanced light harvesting process is qualitatively explained through modal analysis. In addition, we have shown that the condition of current matching in a III-V NW/Si multi-junction can be fulfilled by adjusting the diameter of the NWs. In order to study the current-voltage characteristics of the proposed cell, the optical generation profiles under AM1.5G illumination are incorporated into an electrical modeling. Our optoelectrical simulations indicate that, with an excellent current matching between subcells, the performance of the proposed structure is comparable with state-of-the-art multi-junction cells. The results presented here indicate that semiconductor NWs may provide a promising route toward high efficiency multi-junction solar cells.

  8. High mobility CMOS technologies using III-V/Ge channels on Si platform

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Kim, S.-H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; Yamada, H.; Ichikawa, O.; Fukuhara, N.; Hata, M.; Takenaka, M.

    2013-10-01

    MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III-V channels. In this paper, possible solutions for realizing III-V/Ge MOSFETs on the Si platform are presented. The high quality III-V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.

  9. Bonding III-V material to SOI with transparent and conductive ZnO film at low temperature.

    PubMed

    Huang, Xinnan; Gao, Yonghao; Xu, Xingsheng

    2014-06-16

    A procedure of bonding III-V material to SOI at low temperature using conductive and transparent adhesive ZnO as intermediate layer is demonstrated. Bonding layer thickness of less than 100 nm was achieved in our experiment that guaranteed good light coupling efficiency between III-V and silicon. This bonding method showed good bonding strength with shear stress of 80 N/cm(2). The lowest resistance of the bonded samples was 48.9 Ω and the transmittance of the spin-coated ZnO layer was above 99%. This procedure is applicable for fabricating hybrid III-V/Si lasers. PMID:24977526

  10. III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

    NASA Astrophysics Data System (ADS)

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-02-01

    As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.

  11. Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III V Ternary Quantum Dots

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo

    1999-04-01

    The strain, surface and interfacial energies of III V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode and the Volmer-Weber (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which two-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depends on the lattice misfit. In the InPSb/InP system, the smallest number of 2D layers precede the 3D nucleation in the SK mode.

  12. Fabrication of III-V compound nanowires via hot embossing nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Tang, An-Chieh; He, Shi-Yuan; Lee, Ming-Kwei

    2016-03-01

    In this study, the nanoimprint lithography (NIL) technique used to fabricate III-V compound nanowires was investigated. A silicon mold and thermoplastic polymer mr-I 7010R were used for hot embossing nanoimprint lithography. The mold was patterned by e-beam lithography with two masks exposed with different dosages to reduce the proximity effect. The filling capability and residual layer thickness of the thermoplastic polymer were optimized at the embossing temperature of 125 °C. A 73 nm GaAs nanowire was obtained by the mold coated with an antisticking layer.

  13. Electronic Structure and Valence of Mn impurities in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Schulthess, Thomas C.

    2003-11-01

    Mn doped III-V semiconductors have recently become very popular materials since they are ferromagnetic at reasonably high temperatures and in some cases show carrier induced magnetism, where the Curie temperature can be altered by changes in the carrier concentration. It is expected that these materials will play an important role in Spintronics devices. Substitutional Mn impurities in III-V semiconductors can acquire either a divalent or a trivalent configuration. For example, it is generally accepted that Mn in GaAs is in a (d^5+h) configuration with five occupied Mn d-orbitals and a delocalized hole in the valence band. In contrast, Mn in GaN is believed to be in a d^4 configuration with a deep impurity state that has d-character. But there have recently been some discussions about the possibility of having some Mn ion in GaN assuming a divalent (d^5+h) type configuration. In order to achieve carrier induced ferromagnetism, the desired state of the Mn ions in III-V semiconductors is the (d^5+h) configuration. We have therefore performed ab-initio calculations of the Mn valence when it substitutes Ga in various III-V semiconductor hosts. We use the self-interaction corrected local spin density (SIC-LSD) method which is able to treat localized impurity orbitals properly. In particular we find that the method is capable of predicting the (d^5+h) state of Mn in GaAs. For Mn in GaP and GaN the calculations predict a trivalent d^4 state in the idealized system. The energy differences between d^4 and (d^5+h) configurations in GaP are, however, very small. Introduction of defects or donors does change the valence of Mn in GaP, favoring the divalent state under certain circumstances. Work done in collaboration with W. Temmerman and S. Szotek, Daresbury Laboratory, G. M. Stocks, ORNL, and W. H. Butler, MINT Center University of Alabama. This work supported by the Defense Advanced Research Agency and by DOE Office of Science trough ASCR/MICS and BES/DMSE under Contract No

  14. Solid-state lighting : the III-V Epi Killer App.

    SciTech Connect

    Tsao, Jeffrey Yeenien

    2010-06-01

    Throughout its history, lighting technology has made tremendous progress: the efficiency with which power is converted into usable light has increased 2.8 orders of magnitude over three centuries. This progress has, in turn, fueled large increases in the consumption of light and productivity of human society. In this talk, we review an emerging new technology, solid-state lighting: its frontier performance potential; the underlying advances in physics and materials that might enable this performance potential; the resulting energy consumption and human productivity benefits; and the impact on worldwide III-V epi manufacture.

  15. X-point deformation potentials of III-V semiconductors in a tight-binding approach

    NASA Astrophysics Data System (ADS)

    Muñoz, M. C.; Armelles, G.

    1993-07-01

    The hydrostatic E1 and shear E2 deformation potentials of the III-V semiconductor compounds are calculated within a nearest-neighbor tight-binding approach. In the sp3s* parametrization, analytical expressions for both E1 and E2 are derived. The scaling law of the s*p interaction is modified in such a way that it provides deformation potentials at X in reasonable agreement with available experimental data. This phenomenological term takes into account the physical behavior of the actual excited states under strain and consequently, it allows us to describe accurately the dependence of the band-edge states under (001) biaxial strain.

  16. Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors

    SciTech Connect

    Wendler, E.; Wendler, L.

    2012-05-07

    In this letter, the cross section of damage formation per individual ion is measured for III-V compound semiconductors ion implanted at 15 K, applying Rutherford backscattering spectrometry. An empirical model is proposed that explains the measured cross sections in terms of quantities representing the primary energies deposited in the displacement of lattice atoms and in electronic interactions. The resulting formula allows the prediction of damage formation for low temperatures and low ion fluences in these materials and can be taken as a starting point for further quantitative modeling of damage formation including secondary effects such as temperature and ion flux.

  17. Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

    NASA Technical Reports Server (NTRS)

    Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

    2002-01-01

    Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

  18. Conductivity (ac and dc) in III-V amorphous semiconductors and chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Hauser, J. J.

    1985-02-01

    Variable-range hopping, as evidenced by a resistivity proportional to exp(T-1/4), has been induced in many III-V amorphous semiconductors (InSb, AlSb, and GaAs) and even in chalcogenide glasses (As2Te3, As2Te3-xSex, and GeTe) by depositing films at 77 K. It is therefore remarkable that the same procedure failed to generate variable-range hopping in GaSb, which is one of the less ionic III-V semiconductors. Besides differences in the dc conductivity, there are also different behaviors in the ac conductivity of amorphous semiconductors. The low-temperature ac conductivity of all amorphous semiconductors is proportional to ωsTn with s~=1 and n<1, which is consistent with a model of correlated barrier hopping of electron pairs between paired and random defects. However, in the case of a-SiO2 and a-GeSe2 one finds, in addition, that the capacitance obeys the scaling relation C=A ln(Tω-1), which would suggest a conduction mechanism by tunneling relaxation. Furthermore, this scaling relation cannot be fitted to the data for a-As2Te3, a-InSb, and a-GaSb although the functional dependence of C on T and ω are similar.

  19. Anomalous first-order Raman scattering in III-V quantum dots: Optical deformation potential interaction

    NASA Astrophysics Data System (ADS)

    Rolo, Anabela G.; Vasilevskiy, Mikhail I.; Hamma, Mimoun; Trallero-Giner, Carlos

    2008-08-01

    In contrast to the most commonly studied nanocrystals of II-VI materials, resonant Raman spectra of colloidal III-V quantum dots (QDs) show two almost equally intense peaks centered approximately at the longitudinal and transverse optical (TO) bulk phonon frequencies. The “anomalous” spectra of III-V QDs are explained in the framework of a microscopic theory for the first-order resonant Raman scattering, which takes into account the optical deformation potential (ODP) and Fröhlich exciton-phonon interactions—valid for spherical nanoparticles. It is obtained that: (i) the “anomalous” TO peak is mostly due to confined phonon modes with the angular momentum lp=3 ; (ii) Raman intensity depends on the QD radius (R) as R-3 for the ODP mechanism, while for the Fröhlich one it is proportional to R-1 ; and (iii) the relative intensity ITO/ILO ratio value is higher in backscattering configuration for cross polarization than for parallel one. Raman spectra calculated within the Luttinger-Kohn Hamiltonian for the electronic states and a phenomenological theory of optical vibrations including rigorously both the mechanical and electrostatic matching boundary conditions explain the experimental data for InP QDs using bulk phonon parameters and ODP constant.

  20. Vapor transport epitaxy: an advanced growth process for III-V and II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Gurary, Alexander; Tompa, Gary S.; Nelson, Craig R.; Stall, Richard A.; Lu, Yicheng; Liang, Shaohua

    1992-09-01

    The Vapor Transport Epitaxy (VTE) thin film deposition technique for the deposition of III - V and II - VI compound semiconductors and material results are reviewed. The motivation for development of the VTE technique is the elimination of several problems common to molecular beam epitaxy/chemical beam epitaxy and metalorganic chemical vapor deposition systems. In VTE, vapors from sources feed through throttling valves into a common manifold which is located directly below the inverted wafer. A high degree of film uniformity is achieved by controlling the flux distribution from the common manifold. The technique operates in the 10-4 - 10-6 Torr range using elemental, metalorganic or gaseous precursors. The system is configurated for 2 inch diameter wafers but the geometry may easily be scaled for larger diameters. Using elemental sources, we have demonstrated oval defect free growth of GaAs on GaAs (100) and (111) 2 degree(s) off substrates, through several microns of thickness at growth rates up to ten microns per hour. GaAs films which were grown without the manifold exhibit classic oval defects. The deposition rate of ZnSe films as a function of elemental flux, VI/II ratio, and growth temperature are described. The ZnSe films exhibited smooth surface morphologies on GaAs (100) 2 degree(s) off substrates. X- ray analysis shows that III - V and II - VI films exhibited crystallinities comparable to films produced by molecular beam epitaxy and metalorganic chemical vapor deposition techniques.

  1. Surface diffusion during shadow-mask-assisted molecular-beam epitaxy of III-V compounds

    SciTech Connect

    Schallenberg, T.; Brunner, K.; Borzenko, T.; Molenkamp, L.W.; Karczewski, G.

    2005-07-01

    We present a comprehensive discussion of molecular-beam epitaxy of III-V compound semiconductors through shadow masks. Based on model calculations and growth experiments, we examine how the surface diffusion and the incorporation of group-III adatoms depend on the growth configuration, group-III and group-V fluxes, and the crystal orientation. According to a macroscopic diffusion model, gradients of the group-V flux drive the unidirectional migration of group-III adatoms. Although this effect is generally observed in the experiments, the different growth profiles obtained for [110]- and [110]-oriented samples reflect the different roles of A-type and B-type steps in the incorporation of group-III adatoms. We also demonstrate that during the heteroepitaxial growth of InAs, the dissociation of the GaAs substrate is locally enhanced by the incidence of the In beam. This effect can be exploited for shadow-mask-assisted etching on selected areas. In addition, we show how the positions and sizes of III-V nanostructures can be controlled with high precision on a planar substrate by the usage of shadow masks with multiple nanoscale apertures.

  2. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  3. Improved adhesion of photoresist to III-V substrates using PECVD carbon films

    NASA Astrophysics Data System (ADS)

    Mancini, David P.; Smith, Steven M.; Hooper, Andrew F.; Talin, A.; Chang, Daniel; Resnick, Douglas J.; Voight, Steven A.

    2002-07-01

    Amorphous PECVD carbon films have been investigated as a means to prepare III-V compound semiconductor substrates for improved photoresist adhesion. Results show that significant improvements in adhesive durability of patterned photoresist occurred for carbon primed GaAs and InGaAs wafers used in conjunction with both i-line and DUV lithography processes. These carbon layers, were 50-100 Angstrom in thickness, and varied in composition and morphology from a nitrogen-doped, diamond-like material (DLC), to a more hydrogen rich, polymer-like material (PLC). Adhesion durability tests performed in baths of ammonium hydroxide (NH4OH) and hydrochloric acid (HCl) in general showed superior performance compared to non-primed substrates. The sole exception was a failure of PLC priming on GaAs wafers used with a DUV anti-reflective coating. This same system, however, was shown to work extremely well when a DLC coating was substituted. Characterization of PLC and DLC films included use of AES, XPS, FTIR, AFM, and contact angle analysis. Results indicate that carbon films passivate III-V oxides, creating a stable, hydrophobic surface. This factor is proposed as a key reason for the improved resistance to aggressive aqueous environments. AFM results show that carbon films are extremely smooth and actually decrease surface roughness, indicating that mechanical adhesion is unlikely.

  4. III-V nitrides and performance of graphene on copper plasmonic biosensor

    NASA Astrophysics Data System (ADS)

    Mohanty, Goutam; Sahoo, Bijaya Kumar

    2016-05-01

    In the present study, the influence of iii-v nitrides as well as Ge and Si on the sensitivity and performance of a graphene protected copper plasmonic biosensor has been investigated. These semiconductors have been used between copper (Cu) and graphene layers on a SF 10 glass prism. The sensitivity and performance of the biosensor has been computed for with and without semiconductors. III-V nitrides demonstrated high sensitivity and high figure of merit (FOM) in comparison to Si and Ge due to their superior electronic and optical properties. The enhancement of evanescent electric field due to Si, Ge, AlN, GaN and InN have been computed and found highest enhancement for InN. This happens due to high refractive index of InN than other semiconductors. Analysis shows that for a high sensitive imaging biosensor the required optimal thickness of copper, InN and graphene are respectively 32 nm, 13 nm and 0.34 nm for light of wavelength λ = 633 nm (red Hesbnd Ne laser). This study suggests that InN would be a better choice for fabrication of new imaging plasmonic biosensors for chemical and biological sensing.

  5. III-V nanowire growth mechanism: V/III ratio and temperature effects.

    PubMed

    Dayeh, Shadi A; Yu, Edward T; Wang, Deli

    2007-08-01

    We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology. PMID:17608541

  6. Epitaxial growth of rare-earth trifluorides on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Ritchie, Sayuri

    Epitaxial growths of rare-earth trifluorides on III--V semiconductors have been investigated. Synchrotron photoemission spectroscopy showed a complete coverage of III--V substrates by LaF3 and ErF3 films and interfacial chemical reactions at the interface. In the LaF 3 films on GaAs(111) substrates, residual tensile strains were detected by high-resolution X-ray diffraction (HRXRD) contrary to the expected compressive strains in the case of a pseudomorphic growth. The tensile strains are interpreted as being due to the differential thermal contractions of the fluorides and the semiconductors during cooling. The correlations between the bulk structure and the surface structure of the LaF3 films on GaAs and InP substrates have been studied by X-ray rocking curve measurements, grazing incidence X-ray scattering and atomic force microscopy. The lateral coherence lengths in the LaF3 films from the X-ray rocking curves and the height-height surface correlation lengths from the X-ray scattering and the atomic force microscopy were comparable to each other and were associated with the lattice mismatch of the system at the growth temperature. The results are interpreted in terms of strain relieving defects surrounding the columns of coherent crystals. The kinetics of LaF3 film growths on III--V semiconductors were investigated using the self-affine surface structure analysis for the X-ray specular/diffuse scattering and the atomic force microscopy. The scaling exponents for the film growth obtained from the analysis were closest to the exponents predicted by the Villain-Lai-Das Sarma model in which the surface diffusion of deposited particles is the most important process in the film growth. InP single crystal islands have been grown on LaF3/InP(111) heterostructures. The InP islands are observed to be faceted with three-fold symmetry as expected for (111) orientation. A small broadening of the InP substrate diffraction peak is interpreted as being due to inhomogeneous

  7. Integrating III-V compound semiconductors with silicon using wafer bonding

    NASA Astrophysics Data System (ADS)

    Zhou, Yucai

    2000-12-01

    From Main Street to Wall Street, everyone has felt the effects caused by the Internet revolution. The Internet has created a new economy in the New Information Age and has brought significant changes in both business and personal life. This revolution has placed strong demands for higher bandwidth and higher computing speed due to high data traffic on today's information highway. In order to alleviate this problem, growing interconnection bottlenecks in digital designs have to be solved. The most feasible and practical way is to replace the conventional electrical interconnect with an optical interconnect. Since silicon does not have the optical properties necessary to accommodate these optical interconnect requirements, III-V based devices, most of which are GaAs-based or InP-based, must be intimately interconnected with the Si circuit at chip level. This monolithic integration technology enables the development of both intrachip and interchip optical connectors to take advantage of the enormous bandwidth provided by both high-performance very-large-scale integrated (VLSI) circuits and allied fiber and free-space optical technologies. However, lattice mismatch and thermal expansion mismatches between III-V materials and Si create enormous challenges for developing a feasible technology to tackle this problem. Among all the available approaches today, wafer bonding distinguishes itself as the most promising technology for integration due to its ability to overcome the constraints of both lattice constant mismatch and thermal expansion coefficient differences and even strain due to the crystal orientation. We present our development of wafer bonding technology for integrating III-V with Si in my dissertation. First, the pick-and-place multiple-wafer bonding technology was introduced. Then we systematically studied the wafer bonding of GaAs and InP with Si. Both high temperature wafer fusion and low/room temperature (LT/RT) wafer bonding have been investigated for

  8. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sethi, S.; Bhattacharya, P. K.

    1996-03-01

    We have studied the properties of molecular beam epitaxially (MBE)-grown Erdoped III-V semiconductors for optoelectronic applications. Optically excited Er3+ in insulating materials exhibits optical emission chiefly around 1.54 μm, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on several of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Errelated PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (double-crys-tal x-ray and transmission electron microscopy) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read-Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  9. a Study of Erbium Doped Iii-V Semiconductors for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Sethi, Sanjay

    1995-11-01

    This dissertation presents work done on materials and novel devices made with MBE-grown Er-doped III-V semiconductors for optoelectronic applications. Optically-excited Er ^{3+} in insulating materials exhibits optical emission chiefly around 1.54 mum, in the range of minimum loss in silica fiber. It was thought, therefore, that an electrically -pumped Er-doped semiconductor laser would find great applicability in fiber-optic communication systems. Exhaustive photoluminescence (PL) characterization was conducted on the entire gamut of As-based III-V semiconductors doped with Er, on bulk as well as quantum-well structures. We did not observe any Er-related PL emission at 1.54 μm for any of the materials/structures studied, a phenomenon which renders impractical the realization of an Er-doped III-V semiconductor laser. Deep level transient spectroscopy studies were performed on GaAs and AlGaAs co-doped with Er and Si to investigate the presence of any Er-related deep levels. The lack of band-edge luminescence in the GaAs:Er films led us to perform carrier-lifetime measurements by electro-optic sampling of photoconductive transients generated in these films. We discovered lifetimes in the picosecond regime, tunable by varying the Er concentration in the films. We also found the films to be highly resistive, the resistivity increasing with increasing Er-concentration. Intensive structural characterization (Double -crystal X-ray and TEM) performed by us on GaAs:Er epilayers indicates the presence of high-density nanometer-sized ErAs precipitates in MBE-grown GaAs:Er. These metallic nanoprecipitates probably form internal Schottky barriers within the GaAs matrix, which give rise to Shockley-Read -Hall recombination centers, thus accounting for both the high resistivities and the ultrashort carrier lifetimes. Optoelectronic devices fabricated included novel tunable (in terms of speed and responsivity) high-speed metal-semiconductor-metal (MSM) photodiodes made with Ga

  10. Toward a III-V Multijunction Space Cell Technology on Si

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

    2007-01-01

    High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red

  11. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    PubMed

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  12. Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

    PubMed

    Lin, Shiyun; Zheng, Xuezhe; Yao, Jin; Djordjevic, Stevan S; Cunningham, John E; Lee, Jin-Hyoung; Shubin, Ivan; Luo, Ying; Bovington, Jock; Lee, Daniel Y; Thacker, Hiren D; Raj, Kannan; Krishnamoorthy, Ashok V

    2016-09-19

    We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits. PMID:27661885

  13. New III-V cell design approaches for very high efficiency

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. )

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  14. New III-V cell design approaches for very high efficiency

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O'Bradovich, G.J.; Young, M.P. )

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  15. Nucleation and growth of dielectric films on III-V semiconductors during atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Granados Alpizar, Bernal

    In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the power density, the channel should be replaced with a material having a higher electron mobility, such as a III-V semiconductor. However, the integration of III-V's is a challenge because these materials oxidize rapidly when exposed to air and the native oxide produced is characterized by a high density of defects. Deposition of high-k materials on III-V semiconductors using Atomic Layer Deposition (ALD) reduces the thickness of these oxides, improving the semiconductor/oxide interface quality and the transistor electrical characteristics. In this work, ALD is used to deposit two dielectrics, Al 2O3 and TiO2, on two III-V materials, GaAs and InGaAs, and in-situ X-ray photoelectron spectroscopy (XPS) and in-situ thermal programmed desorption (TPD) are used for interface characterization. Hydrofluoric acid (HF) etching of GaAs(100) and brief reoxidation in air produces a 9.0 ±1.6 Å-thick oxide overlayer containing 86% As oxides. The oxides are removed by 1 s pulses of trimethylaluminum (TMA) or TiCl4. TMA removes the oxide overlayer while depositing a 7.5 ± 1.6 Å thick aluminum oxide. The reaction follows a ligand exchange mechanism producing nonvolatile Al-O species that remain on the surface. TiCl4 exposure removes the oxide overlayer in the temperature range 89°C to 300°C, depositing approximately 0.04 monolayer of titanium oxide for deposition temperatures from 89°C to 135°C, but no titanium oxide is present from 170 °C to 230 °C. TiCl4 forms a volatile oxychloride product and removes O from the surface while leaving Cl atoms adsorbed to an elemental As layer, chemically passivating the surface. The native oxide of In0.53Ga0.47As(100) is removed using liquid HF and gas phase HF before deposition of Al2O3 using TMA and H2O at 170 °C. An aluminium oxide film with a thickness of 7.2 ± 1.2 Å and 7.3 ± 1.2 Å is deposited during the first pulse of TMA on

  16. Radiative dark current in optically thin III-V photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Welser, Roger E.; Sood, Ashok K.; Tatavarti, Sudersena Rao; Wibowo, Andree; Wilt, David M.; Howard, Alex

    2015-03-01

    High-voltage InGaAs quantum well solar cells have been demonstrated in a thin-film format, utilizing structures that employ advanced band gap engineering to suppress non-radiative recombination and expose the limiting radiative component of the diode current. In particular, multiple InGaAs quantum well structures fabricated via epitaxial lift-off exhibit one-sun open circuit voltages as high as 1.05 V. The dark diode characteristics of these high-voltage III-V photovoltaic devices are compared to the radiative current calculated from the measured external quantum efficiency using a generalized detailed balance model specifically adapted for optically-thin absorber structures. The fitted n=1 component of the diode current is found to match the calculated radiative dark current when assuming negligible photon recycling, suggesting this thin-film multiple quantum well structure is operating close to the radiative limit.

  17. Lattice-Mismatched III-V Epilayers for High-Efficiency Photovoltaics

    SciTech Connect

    Ahrenkiel, Scott Phillip

    2013-06-30

    The project focused on development of new approaches and materials combinations to expand and improve the quality and versatility of lattice-mismatched (LMM) III-V semiconductor epilayers for use in high-efficiency multijunction photovoltaic (PV) devices. To address these goals, new capabilities for materials synthesis and characterization were established at SDSM&T that have applications in modern opto- and nano-electronics, including epitaxial crystal growth and transmission electron microscopy. Advances were made in analyzing and controlling the strain profiles and quality of compositional grades used for these technologies. In particular, quaternary compositional grades were demonstrated, and a quantitative method for characteristic X-ray analysis was developed. The project allowed enhanced collaboration between scientists at NREL and SDSM&T to address closely related research goals, including materials exchange and characterization.

  18. Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

    PubMed

    Lin, Shiyun; Zheng, Xuezhe; Yao, Jin; Djordjevic, Stevan S; Cunningham, John E; Lee, Jin-Hyoung; Shubin, Ivan; Luo, Ying; Bovington, Jock; Lee, Daniel Y; Thacker, Hiren D; Raj, Kannan; Krishnamoorthy, Ashok V

    2016-09-19

    We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

  19. Recent pollution prevention research in III-V device manufacturing at Hewlett-Packard

    SciTech Connect

    Shire, D.B.

    1994-12-31

    Several coordinated hazardous waste minimization projects have been undertaken at the facilities involved in III-V device manufacturing. These include modifications to existing processes to reduce or eliminate emissions of CFCs, 1,1,1-TCA, xylenes, ethylene glycol ethers, 1,2,4-trichlorobenzene (in photoresist stripper), and other compounds. These issues are addressed in turn, noting the unique aspects of GaAs and GaP device manufacture that need to be taken into account. Goals achieved have been complete cessation of CFC and 1,1,1-TCA use and 33% reductions in xylene and 1,2,4-trichlorobenzene usage since 1990, despite significant increases in total production volume during the same time period. Specific strategies are also described for tracking chemical use and sharing best practices for hazardous waste reduction across functional groups.

  20. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  1. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  2. Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell.

    PubMed

    Wang, Y; Zhang, Y; Zhang, D; He, S; Li, X

    2015-12-01

    In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

  3. Parallel nanogap fabrication with nanometer size control using III-V semiconductor epitaxial technology.

    PubMed

    Fernández-Martínez, Iván; González, Yolanda; Briones, Fernando

    2008-07-01

    A nanogap fabrication process using strained epitaxial III-V beams is reported. The process is highly reproducible, allowing parallel fabrication and nanogap size control. The beams are fabricated from MBE-grown (GaAs/GaP)/AlGaAs strained heterostructures, standard e-beam lithography and wet etching. During the wet etching process, the relaxation of the accumulated stress at the epitaxial heterostructure produces a controlled beam breakage at the previously defined beam notch. After the breakage, the relaxed strain is proportional to the beam length, allowing nanogap size control. The starting structure is similar to a mechanically adjustable break junction but the stress causing the breakage is, in this case, built into the beam. This novel technique should be useful for molecular-scale electronic devices.

  4. Ab initio study on microscopic properties of III-V/water interfaces for photoelectrochemical hydrogen production

    NASA Astrophysics Data System (ADS)

    Wood, Brandon; Choi, Woon Ih; Schwegler, Eric; Ogitsu, Tadashi

    2013-03-01

    Photoelectrodes made of III-V semiconductors are known to exhibit very high solar-to-hydrogen conversion efficiency (from solar energy to chemical energy as H2 bond); however, photocorrosion of the electrode in electrolyte solution remains an issue. Based on ab-initio molecular dynamics simulations, we study the structure, stability, and chemical activity of GaP/InP(001) semiconductor electrodes in contact with water. We will show how surface oxygen and hydroxyl change the electronic and chemical properties of water at the interface, leading to the formation of a strong hydrogen-bond network where fast surface hydrogen transport seems to be realized. Implications from our findings will be discussed in detail at the presentation. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52- 07NA27344.

  5. A model of axial heterostructure formation in III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Dubrovskii, V. G.

    2016-03-01

    A kinetic model of the formation of axial heterostructures in nanocrystalline wires (nanowires, NWs) of III-V semiconductor compounds growing according to the vapor-liquid-solid (VLS) mechanism is proposed. A general system of nonstationary equations for effective fluxes of two elements of the same group (e.g., group III) is formulated that allows the composition profile of a heterostructure to be calculated as a function of the coordinate and epitaxial growth conditions, including the flux of a group V element. Characteristic times of the composition relaxation, which determine the sharpness of the heteroboundary (heterointerface), are determined in the linear approximation. A temporal interruption (arrest) of fluxes during the switching of elements for a period exceeding these relaxation times must increase sharpness of the heteroboundary. Model calculations of the composition profile in a double GaAs/InAs/GaAs axial heterostructure have been performed for various NW radii.

  6. Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fitzgerald, Eugene A.; Ringel, Steven A.

    2005-01-01

    A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

  7. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    NASA Astrophysics Data System (ADS)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  8. Alloy

    NASA Astrophysics Data System (ADS)

    Cabeza, Sandra; Garcés, Gerardo; Pérez, Pablo; Adeva, Paloma

    2014-07-01

    The Mg98.5Gd1Zn0.5 alloy produced by a powder metallurgy route was studied and compared with the same alloy produced by extrusion of ingots. Atomized powders were cold compacted and extruded at 623 K and 673 K (350 °C and 400 °C). The microstructure of extruded materials was characterized by α-Mg grains, and Mg3Gd and 14H-LPSO particles located at grain boundaries. Grain size decreased from 6.8 μm in the extruded ingot, down to 1.6 μm for powders extruded at 623 K (350 °C). Grain refinement resulted in an increase in mechanical properties at room and high temperatures. Moreover, at high temperatures the PM alloy showed superplasticity at high strain rates, with elongations to failure up to 700 pct.

  9. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  10. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    SciTech Connect

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  11. Growth of III-V nitrides and buffer layer investigation by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Huang, Tzu-Fang

    1999-11-01

    III-V nitrides have been investigated intensively due to the enormous interest in optoelectronic device applications in the green, blue, violet, and near-ultraviolet regions. Advances in III-V nitride materials for short wavelength light sources will lead to both a revolution in optical disk storage, as higher densities can be achieved with short wavelengths, and a major impact on imaging and graphic technology as high quality red, green, and blue light-emitting diodes (LED) and lasers become available. High quality GaN films have mostly been prepared by metal-organic vapor phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE). Compared to these techniques, pulsed laser deposition (PLD) is a relatively new growth technique used widely for the growth of oxide thin films. However, several advantages of PLD make it worthy of study as a method of growing nitrides. The congruent ablation achieved with short UV-laser pulses allows deposition of a multicomponent material by employing a single target and the ability for depositing a wide variety of materials. This advantage makes PLD very suitable for growing multilayer structures sequentially in the same chamber and investigating the effect of buffer layers. Moreover, the strong nonequilibrium growth conditions of PLD may lead to different nucleation and growth processes. In this work, GaN and (Al,Ga)N films have been epitaxially grown on (0001) sapphire substrate by PLD, which has been successfully applied to controlling the lattice constant and band gap of (Al,Ga)N. Room-temperature photoluminescence of PLD-GaN exhibits a strong band edge emission at 3.4eV. The threading dislocations of GaN are predominantly screw dislocations with Burgers vector of <0001> while edge dislocations with Burgers vector of 1/3<11-20> are the dominant ones in GaN grown by MBE, MOCVD and VPE. This variation observed in defect characteristics may come from the difference in nucleation and growth kinetics between PLD

  12. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates

    NASA Astrophysics Data System (ADS)

    He, Gang; Chen, Xiaoshuang; Sun, Zhaoqi

    2013-03-01

    Recently, III-V materials have been extensively studied as potential candidates for post-Si complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle to implement III-V compound semiconductors for CMOS applications is the lack of high quality and thermodynamically stable insulators with low interface trap densities. Due to their excellent thermal stability and relatively high dielectric constants, Hf-based high-k gate dielectrics have been recently highlighted as the most promising high-k dielectrics for III-V-based devices. This paper provides an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates. We begin with a survey of methods developed for generating Hf-based high-k gate dielectrics. To address the impact of these hafnium based materials, their interfaces with GaAs as well as a variety of semiconductors are discussed. After that, the integration issues are highlighted, including the development of high-k deposition without Fermi level pinning, surface passivation and interface state, and integration of novel device structure with Si technology. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of Hf-based gate dielectrics on the current and future applications for nano-MOSFET devices.

  13. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    NASA Astrophysics Data System (ADS)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  14. Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III-V Buckled Honeycombs.

    PubMed

    Crisostomo, Christian P; Yao, Liang-Zi; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Albao, Marvin A; Bansil, Arun

    2015-10-14

    A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing to its spin-polarized backscattering-free edge conducting channels. Although many freestanding films have been predicted to harbor the QSH phase, band topology of a film can be modified substantially when it is placed or grown on a substrate, making the materials realization of a 2D TI challenging. Here we report a first-principles study of possible QSH phases in 75 binary combinations of group III (B, Al, Ga, In, and Tl) and group V (N, P, As, Sb, and Bi) elements in the 2D buckled honeycomb structure, including hydrogenation on one or both sides of the films to simulate substrate effects. A total of six compounds (GaBi, InBi, TlBi, TlAs, TlSb, and TlN) are identified to be nontrivial in unhydrogenated case; whereas for hydrogenated case, only four (GaBi, InBi, TlBi, and TlSb) remains nontrivial. The band gap is found to be as large as 855 meV for the hydrogenated TlBi film, making this class of III-V materials suitable for room temperature applications. TlBi remains topologically nontrivial with a large band gap at various hydrogen coverages, indicating the robustness of its band topology against bonding effects of substrates.

  15. Analysis of III-V Superlattice nB n Device Characteristics

    NASA Astrophysics Data System (ADS)

    Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P.; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.

    2016-09-01

    Mid-wavelength infrared nB n detectors built with III-V superlattice materials have been tested by means of both capacitance and direct-current methods. By combining the results, it is possible to achieve clear separation of the two components of dark current, namely the generation-recombination (GR) current due to the Shockley-Read-Hall mechanism in the depletion region, and the diffusion current from the neutral region. The GR current component is unambiguously identified by two characteristics: (a) it is a linear function of the depletion width, and (b) its activation energy is approximately one-half the bandgap. The remaining current is shown to be due to diffusion because of its activation energy equaling the full bandgap. In addition, the activation energy of the total measured dark current in each local region of the temperature-bias parameter space is evaluated. We show the benefits of capacitance analysis applied to the nB n device and review some of the requirements for correct measurements. The carrier concentration of the unintentionally doped absorber region is found to be 1.2 × 1014 cm-3 n-type. It is shown that the depletion region resides almost entirely within the absorber. Also, the doping in the nB n barrier is found to be 4 × 1015 cm-3 p-type. Minority-carrier lifetimes estimated from the dark current components are on the order of 10 μs.

  16. Electrically pumped continuous-wave III-V quantum dot lasers on silicon

    NASA Astrophysics Data System (ADS)

    Chen, Siming; Li, Wei; Wu, Jiang; Jiang, Qi; Tang, Mingchu; Shutts, Samuel; Elliott, Stella N.; Sobiesierski, Angela; Seeds, Alwyn J.; Ross, Ian; Smowton, Peter M.; Liu, Huiyun

    2016-05-01

    Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm-2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm-2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic-electronic integration.

  17. Proton irradiation effects on advanced digital and microwave III-V components

    NASA Astrophysics Data System (ADS)

    Hash, G. L.; Schwank, J. R.; Shaneyfelt, M. R.; Sandoval, C. E.; Connors, M. P.; Sheridan, T. J.; Sexton, F. W.; Slayton, E. M.; Heise, J. A.; Foster, C.

    1994-01-01

    A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10(exp 10) to 2 x 10(exp 14) protons/sq cm. Large soft-error rates were measured for digital GaAs MESFET (3 x 10(exp -5) errors/bit-day) and heterojunction bipolar circuits (10(exp -5) errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-(mu)m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10(exp 14) protons/sq cm (equivalent to total doses in excess of 10 Mrad(GaAs)).

  18. Damage in III-V compounds during focused ion beam milling.

    PubMed

    Rubanov, S; Munroe, P R

    2005-10-01

    The damage layers generated in III-V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

  19. Theoretical performance of multi-junction solar cells combining III-V and Si materials.

    PubMed

    Mathews, Ian; O'Mahony, Donagh; Corbett, Brian; Morrison, Alan P

    2012-09-10

    A route to improving the overall efficiency of multi-junction solar cells employing conventional III-V and Si photovoltaic junctions is presented here. A simulation model was developed to consider the performance of several multi-junction solar cell structures in various multi-terminal configurations. For series connected, 2-terminal triple-junction solar cells, incorporating an AlGaAs top junction, a GaAs middle junction and either a Si or InGaAs bottom junction, it was found that the configuration with a Si bottom junction yielded a marginally higher one sun efficiency of 41.5% versus 41.3% for an InGaAs bottom junction. A significant efficiency gain of 1.8% over the two-terminal device can be achieved by providing an additional terminal to the Si bottom junction in a 3-junction mechanically stacked configuration. It is shown that the optimum performance can be achieved by employing a four-junction series-connected mechanically stacked device incorporating a Si subcell between top AlGaAs/GaAs and bottom In0.53Ga0.47As cells.

  20. Proton irradiation effects on advanced digital and microwave III-V components

    SciTech Connect

    Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.; Sandoval, C.E.; Connors, M.P.; Sheridan, T.J.; Sexton, F.W.; Slayton, E.M.; Heise, J.A.; Foster, C.

    1994-09-01

    A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].

  1. Raising the Efficiency Ceiling with Multijunction III-V Concentrator Photovoltaics

    SciTech Connect

    King, R. R.; Boca, A.; Edmondson, K. M.; Romero, M. J.; Yoon, H.; Law, D. C.; Fetzer, C. M.; Haddad, M.; Zakaria, A.; Hong, W.; Mesropian, S.; Krut, D. D.; Kinsey, G. S.; Pien, R.; Sherif, R. A.; Karam, N. H.

    2008-01-01

    In this paper, we look at the question 'how high can solar cell efficiency go?' from both theoretical and experimental perspectives. First-principle efficiency limits are analyzed for some of the main candidates for high-efficiency multijunction terrestrial concentrator cells. Many of these cell designs use lattice-mismatched, or metamorphic semiconductor materials in order to tune subcell band gaps to the solar spectrum. Minority-carrier recombination at dislocations is characterized in GaInAs inverted metamorphic solar cells, with band gap ranging from 1.4 to 0.84 eV, by light I-V, electron-beam-induced current (EBIC), and cathodoluminescence (CL). Metamorphic solar cells with a 3-junction GaInP/ GaInAs/ Ge structure were the first cells to reach over 40% efficiency, with an independently confirmed efficiency of 40.7% (AM1.5D, low-AOD, 240 suns, 25 C). The high efficiency of present III-V multijunction cells now in high-volume production, and still higher efficiencies of next-generation cells, is strongly leveraging for low-cost terrestrial concentrator PV systems.

  2. Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kaspari, Christian; Pristovsek, Markus; Richter, Wolfgang

    2016-08-01

    We studied the deoxidation of several (001) III-V semiconductors in metal-organic vapour phase epitaxy using in-situ reflectance anisotropy spectroscopy and in-situ spectroscopic ellipsometry. The oxide desorption started as soon as kBT reaches 1/15th of the bond strength of the crystal if there is hydrogen or group V precursor present. The oxide thickness decreases first and afterwards the surface slowly reconstructs. At a constant temperature the oxide thickness decreased according to a second order reaction. We found two processes on InAs and GaAs, but only a single one on InP. The activation energy for the removal of epi-ready oxide under group V flux was 0.64 eV, 1.1 eV, and 1.3 eV on InAs, GaAs, and InP, respectively. The end of oxide desorption is determined by the removal of the last metal rich oxides, at temperatures of 500 °C for InAs/InP and 600 °C for GaAs/GaP.

  3. Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Höhn, O.; Micha, D. N.; Wagner, L.; Helmers, H.; Bett, A. W.; Dimroth, F.

    2015-03-01

    Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 μs and 100 ns respectively in a 2 μm thin active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's non-radiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of concentration.

  4. Electron g factor anisotropy in asymmetric III-V semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Toloza Sandoval, M. A.; Silva, E. A. de Andrada e.; Ferreira da Silva, A.; La Rocca, G. C.

    2016-11-01

    The electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the 8× 8 {k}\\cdot {p} Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors {g}\\perp * and {g}\\parallel * , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy {{Δ }}g={g}\\perp * -{g}\\parallel * in AQWs, a sign change is predicted in the narrow well limit due to SIA, which can explain recent measurements and be useful in spintronic applications. Specific results for narrow-gap {{AlSb}}/{{InAs}}/{{GaSb}} and {{{Al}}}x{{{Ga}}}1-x{{As}}/{{GaAs}}/{{{Al}}}y{{{Ga}}}1-y{{As}} AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.

  5. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    PubMed

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

  6. Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission.

    PubMed

    Larrue, Alexandre; Wilhelm, Christophe; Vest, Gwenaelle; Combrié, Sylvain; de Rossi, Alfredo; Soci, Cesare

    2012-03-26

    A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects. PMID:22453454

  7. Laser field induced optical gain in a group III-V quantum wire

    NASA Astrophysics Data System (ADS)

    Saravanan, Subramanian; Peter, Amalorpavam John; Lee, Chang Woo

    2016-08-01

    Effect of intense high frequency laser field on the electronic and optical properties of heavy hole exciton in an InAsP/InP quantum well wire is investigated taking into consideration of the spatial confinement. Laser field induced exciton binding energies, optical band gap, oscillator strength and the optical gain in the InAs0.8P0.2/InP quantum well wire are studied. The variational formulism is applied to find the respective energies. The laser field induced optical properties are studied. The optical gain as a function of photon energy, in the InAs0.8P0.2/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The results show that the 1.55 μm wavelength for the fibre optic telecommunication applications is achieved for 45 Å wire radius in the absence of laser field intensity whereas the 1.55 μm wavelength is obtained for 40 Å if the amplitude of the laser field amplitude parameter is 50 Å. The characterizing wavelength for telecommunication network is optimized when the intense laser field is applied for the system. It is hoped that the obtained optical gain in the group III-V narrow quantum wire can be applied for fabricating laser sources for achieving the preferred telecommunication wavelength.

  8. III-V GaAs based plasmonic lasers (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Lafone, Lucas; Nguyen, Ngoc; Clarke, Ed; Fry, Paul; Oulton, Rupert F.

    2015-09-01

    Plasmonics is a potential route to new and improved optical devices. Many predict that sub wavelength optical systems will be essential in the development of future integrated circuits, offering the only viable way of simultaneously increasing speed and reducing power consumption. Realising this potential will be contingent on the ability to exploit plasmonic effects within the framework of the established semiconductor industry and to this end we present III-V (GaAs) based surface plasmon laser platform capable of effective laser light generation in highly focussed regions of space. Our design utilises a suspended slab of GaAs with a metallic slot printed on top. Here, hybridisation between the plasmonic mode of the slot and the photonic mode of the slab leads to the formation of a mode with confinement and loss that can be adjusted through variation of the slot width alone. As in previous designs the use of a hybrid mode provides strong confinement with relatively low losses, however the ability to print the metal slot removes the randomness associated with device fabrication and the requirement for etching that can deteriorate the semiconductor's properties. The deterministic fabrication process and the use of bulk GaAs for gain make the device prime for practical implementation.

  9. Calculations of the specific resistance of contacts to III-V nitride compounds

    SciTech Connect

    Barnes, P.A.; Zhang, X.J.; Lovejoy, M.L.; Drummond, T.J.; Hjalmarson, H.P.; Crawford, M.; Shul, R.J.; Zolper, J.C.

    1996-11-01

    The authors present calculations of the specific contact resistance for metals to GaN. The calculations include a correct determination of the Fermi level taking into account the effect of the degenerate doping levels, required in creating tunneling ohmic contacts. Using a recently reported improved WKB approximation suitable in representing the depletion width at the metal-semiconductor interface, and a two band k{center_dot}p model for the effective masses, specific contact resistance was determined as a function of doping concentration. The specific contact resistance was calculated using the best data available for barrier heights, effective masses and dielectric coefficients for GaN. Because the barrier height at the metal-semiconductor interface has a very large effect on the contact resistance and the available data is sketchy or uncertain, the effect of varying the barrier height on the calculated specific contact resistance was investigated. Further, since the III-V nitrides are being considered for high temperature device applications, the specific contact resistance was also determined as a function of temperature.

  10. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  11. A survey of ohmic contacts to III-V compound semiconductors

    SciTech Connect

    Baca, A.G.; Zolper, J.C.; Briggs, R.D.; Ren, F.; Pearton, S.J.

    1997-04-01

    A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

  12. The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

    NASA Astrophysics Data System (ADS)

    Greene, Andrew M.

    Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1

  13. A novel surface preparation methodology for epi-ready antimonide based III-V substrates

    NASA Astrophysics Data System (ADS)

    Dutta, P. S.; Rajagopalan, G.; Kim, H. J.; Kumar, A.

    2005-05-01

    Surfaces of GaSb substrates currently available from various commercial vendors are nowhere close to device grade GaAs, Si or InP wafer surfaces. Hence epitaxial growth and device fabrication on as-received commercial substrates poses significant difficulties amongst antimonide based researchers. Antimonide based materials are known to have poor surface oxide quality and not so well understood chemical reactions with various chemicals used to remove the oxides prior to growth. There are no existing reports on the detailed recipe for the preparation of "atomically flat and clean" surfaces that works on wafers obtained from various commercial vendors. This paper presents a detailed recipe for obtaining atomically flat and clean GaSb surfaces, irrespective of the initial polishing source. The same recipe (with slight modification) has been found to be successful with other III-V and II-VI compounds. The novel surface preparation process developed in our laboratory includes, chemical-mechanical polishing using an agglomerate-free sub-micron alumina slurry on a soft pad such as velvet, surface cleaning using dilute ammonium or potassium hydroxide-H2O solution and surfactant or glycerol, surface degreasing using organic solvents, oxide desorption using HCl-H2O and HF-H2O mixtures, mild chemical etching using ammonium sulfide and a final rinse in high purity deionized (DI) water and methanol. Using this recipe, we have been able to achieve surfaces with atomic flatness (RMS surface roughness close to 0.5 nm over a 10 x 10 mm2) and extremely clean surfaces, irrespective of the initial contamination or the sources of the wafers. Results of wafer surfaces before and after polishing using our recipe will be presented.

  14. Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Offrein, Bert-Jan; Caër, Charles; Neumeyr, Christian; Malacarne, Antonio; Guina, Mircea; Sheehan, Robert N.; Peters, Frank H.; Melanen, Petri

    2016-03-01

    We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, +/-0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

  15. Low-power optically addressed spatial light modulators using MBE-grown III-V structures

    NASA Astrophysics Data System (ADS)

    Maserjian, Joseph L.; Larsson, Anders G.

    1991-12-01

    Device approaches are investigated for O-SLMs based on MBE engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically (delta) -doped multiple quantum well (MQW) structures. The doping-defined barriers serve to separate and delay recombination of the photo-generated electron-hole pairs. One can use this photo-effect to change the internal field across the MQWs giving rise to quantum-confined Stark shift. Alternately, the photo-generated electrons can be used to occupy the quantum wells, which in turn causes exciton quenching and a shift of the absorption edge. Recent work has shown that both of these predicted photo-optic effects can indeed be achieved in such MBE engineered structures. However, these enhanced effects are still insufficient for high contrast modulation with only single or double pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach which permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Modulation of the absorption in the active cavity layers unbalances the cavity and 'turns on' the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE- grown structure consisting of a GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (approximately equals 0.98) and the GaAs surface as the low reflectance mirror (approximately equals 0.3). We use for our active cavities InGaAs/GaAs MQWs separated by npn (delta) -doped GaAs barriers to achieve sensitive photo-optic effect due to exciton quenching. High contrast modulation (> 60:1) is achieved with the Fabry-Perot structures using low power (< 100 mW/cm2) InGaAs/GaAS quantum well lasers for a write signal.

  16. Recent advances on antimony(III/V) compounds with potential activity against tumor cells.

    PubMed

    Hadjikakou, S K; Ozturk, I I; Banti, C N; Kourkoumelis, N; Hadjiliadis, N

    2015-12-01

    Antimony one of the heavier pnictogens, has been in medical use against microbes and parasites as well. Antimony-based drugs have been prescribed against leishmaniasis since the parasitic transmission of the tropical disease was understood in the beginning of the 20th century. The activity of arsenic against visceral leishmaniasis led to the synthesis of an array of arsenic-containing parasitic agents, among them the less toxic pentavalent antimonials: Stibosan, Neostibosan, and Ureastibamine. Other antimony drugs followed: sodium stibogluconate (Pentostam) and melglumine antimoniate (Glucantim or Glucantime); both continue to be in use today despite their toxic side effects and increasing loss in potency due to the growing resistance of the parasite against antimony. Antimony compounds and their therapeutic potentials are under consideration from many research groups, while a number of early reviews recording advances of antimony biomedical applications are also available. However, there are only few reports on the screening for antitumor potential of antimony compounds. This review focuses upon results obtained on the anti-proliferative activity of antimony compounds in the past years. This survey shows that antimony(III/V) complexes containing various types of ligands such as thiones, thiosemicarbazones, dithiocarbamates, carboxylic acids, or ketones, nitrogen donor ligands, exhibit selectivity against a variety of cancer cells. The role of the ligand type of the complex is elucidated within this review. The complexes and their biological activity are already reported elsewhere. However quantitative structure-activity relationship (QSAR) modeling studies have been carried out and they are reported for the first time here. PMID:26092367

  17. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    SciTech Connect

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-07

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  18. Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group V flow

    SciTech Connect

    Dubrovskii, V. G.

    2015-05-28

    We present a refined model for the vapor-liquid-solid growth and crystal structure of Au-catalyzed III-V nanowires, which revisits several assumptions used so far and is capable of describing the transition from mononuclear to polynuclear regime and ultimately to regular atomistic growth. We construct the crystal phase diagrams and calculate the wurtzite percentages, elongation rates, critical sizes, and polynucleation thresholds of Au-catalyzed GaAs nanowires depending on the As flow. We find a non-monotonic dependence of the crystal phase on the group V flow, with the zincblende structure being preferred at low and high group V flows and the wurtzite structure forming at intermediate group V flows. This correlates with most of the available experimental data. Finally, we discuss the atomistic growth picture which yields zincblende crystal structure and should be very advantageous for fabrication of ternary III-V nanowires with well-controlled composition and heterointerfaces.

  19. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    NASA Astrophysics Data System (ADS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-07-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  20. All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

    PubMed

    Wu, Yingchen; Huang, Qiangsheng; Keyvaninia, Shahram; Katumba, Andrew; Zhang, Jing; Xie, Weiqiang; Morthier, Geert; He, Jian-Jun; Roelkens, Gunther

    2016-09-01

    We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion. PMID:27607638

  1. Modeling Quantum and Coulomb Effects in Nanoscale Enhancement-Mode Tri-Gate III-V MOSFETs

    NASA Astrophysics Data System (ADS)

    Al-Sibiani, Sameer; Khair, Khadija; Ahmed, Shaikh

    2014-03-01

    Because of limited benefits of strain engineering in extremely scaled silicon devices and lack of demonstration of a performance gain at the product level with nanowires, nanotubes, graphene, and other exotic channel materials, there is a strong motivation to continue device scaling using high-transport III-V (such as InGaAs and InAsSb) channel materials beyond the year 2020. However, there are several challenges with III-V MOSFETs prohibiting their use in high-performance and low-power logic applications. In this work, we investigate the performance of the tri-gate III-V FETs as compared to the planar counterpart, and show how quantum size quantization and random dopant fluctuations (RDF) affect the tri-gate FET characteristics and how to curb these issues. A 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been used in this work. Space-quantization effects have been accounted for via a parameter-free effective potential scheme (and benchmarked against the NEGF approach in the ballistic limit). To treat full Coulomb (electron-ion and electron-electron) interactions, the simulator implements a real-space corrected Coulomb electron dynamics (ED) scheme. Also, the essential bandstructure parameters (bandgap, effective masses, and the density-of-states) have been computed using a 20-band nearest-neighbour sp3d5s* tight-binding scheme.

  2. X-ray studies of III-V native oxide/gallium arsenide interface

    NASA Astrophysics Data System (ADS)

    Cheong, Seong-Kyun

    Three x-ray techniques have been employed to study wet-thermal native oxides of AlGaAs on GaAs. For these materials, a knowledge of the role of As at the interface is important for understanding Fermi-level pinning and is a central issue in efforts to develop high performance III-V MOSFET devices. This study is focused on how the As is incorporated at the interface, the interfacial strain, and related local structural parameters. X-ray absorption fine-structure spectroscopy (XAFS) was used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ˜0.5 mum oxide film removed from its GaAs substrate, the remaining As atoms were found to be coordinated with oxygen in the form of amorphous As oxides, with a mixture of ˜80% As3+ and ˜20% As 5+ sites. These two sites are locally similar to As2O 3 and As2O5. Through this measurement, no evidence of interstitial or substitutional As, As precipitates, or GaAs was seen, implying that less than 10% of the As atoms are in these forms. To characterize the oxide structure in both the oxide film and the interfacial region, x-ray reflectivity and reflection-mode XAFS experiments were performed for a thin (300 A) oxidized AlxGa1-xAs (x = 0.96) film grown on GaAs. X-ray reflectivity studies showed that the composition of the surface oxidized film is not homogeneous as a function of depth. Reflection-mode XAFS, which uses the total external reflection of x-rays to confine an x-ray beam to the interfacial region, provided details of the local environment of As atoms at the interface of the oxide/GaAs. Analysis through this technique revealed that As atoms are in the form of mixed As oxides, with the local environment appearing to resemble As2O3 and As 2O5 in the interfacial region, which is consistent with the above observation from the isolated oxide film.

  3. Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

    NASA Astrophysics Data System (ADS)

    Zheng, Lucy; Tidrow, Meimei; Aitcheson, Leslie; O'Connor, Jerry; Brown, Steven

    2010-04-01

    The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V

  4. First principles calculation of material properties of group IV elements and III-V compounds

    NASA Astrophysics Data System (ADS)

    Malone, Brad Dean

    This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows: • Chapter 1 contains some of the conceptual foundations used in the present work. These involve the major approximations which allow us to approach the problem of systems with huge numbers of interacting electrons and atomic cores. • Then, in Chapter 2, we discuss one of the major limitations to the DFT formalism introduced in Chapter 1, namely its inability to predict the quasiparticle spectra of materials and in particular the band gap of a semiconductor. We introduce a Green's function approach to the electron self-energy Sigma known as the GW approximation and use it to compute the quasiparticle band structures of a number of group IV and III-V semiconductors. • In Chapter 3 we present a first-principles study of a number of high-pressure metastable phases of Si with tetrahedral bonding. The phases studied include all experimentally determined phases that result from decompression from the metallic beta-Sn phase, specifically the BC8 (Si-III), hexagonal diamond (Si-IV), and R8 (Si-XII). In addition to these, we also study the hypothetical ST12 structure found upon decompression from beta-Sn in germanium. • Our attention is then turned to the first principles calculations of optical properties in Chapter 4. The Bethe-Salpeter equation is then solved to obtain the optical spectrum of this material including electron-hole interactions. The calculated optical spectrum is compared with experimental data for other forms of silicon commonly used in photovoltaic devices, namely the cubic, polycrystalline, and amorphous forms. • In Chapter 5 we present

  5. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    NASA Astrophysics Data System (ADS)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  6. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    SciTech Connect

    Fowler, Bruce A. . E-mail: bxf9@cdc.gov; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-08-07

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  7. Threading dislocation reduction in III-V films: Theoretical modeling and experimental methods

    NASA Astrophysics Data System (ADS)

    Mathis, Sheila Kathleen

    Heteroepitaxy remains the most efficient and successful way to integrate materials with the same crystal structure but different lattice constants and optoelectronic properties. The purpose of this work is to understand the processes of strain relaxation and subsequent threading dislocation (TD) reduction through modeling and experiment. The interpretation of these data is made according to a previously published model that is based on dislocation reactions. 1,2 These reactions are the sole mechanism for threading dislocation reduction in III--V epitaxial films.3 Gallium nitride, with no available substrate even close to the lattice-matched condition, has a unique microstructure that develops as a result of initial island growth. Dislocation densities on the order of 109--10 10/cm2 are routinely measured in GaN grown on sapphire. Dislocation reduction in these hexagonal films is extremely slow, and it is shown in Chapter II that film thicknesses on the order of a substrate thickness are required to reduce threading dislocation densities to a low (10 6/cm2) level. A model is developed to treat the reduction of TDs in (0001)-oriented films that explains the non-saturating TD density in GaN. Screw dislocation behavior is shown to strongly affect the dislocation density falloff with thickness. Threading dislocation reduction in low-temperature-grown GaAs (250--350°C) and InGaAs was known to be more efficient than in high-temperature-grown GaAs (580°C). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to study the microstructure of GaAs grown on InP substrates at temperatures between 250 and 580°C to determine the mechanism by which TD reduction was enhanced. While a high level of arsenic antisite defects [ASGa] may affect the TD density at temperatures below 300°C, they do not account for the improved dislocation reduction. When dislocations are generated at high temperature, the TD density on the (111)A and (111)B planes is asymmetric

  8. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  9. InAsSbBi, a direct band-gap, III-V, LWIR material

    NASA Technical Reports Server (NTRS)

    Stringfellow, G. B.; Jones, Colin E.; Frodsham, John

    1990-01-01

    In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation.

  10. Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

    SciTech Connect

    Ringel, S. A.

    2008-11-01

    Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

  11. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... reverse airstream shall be approved by MSHA under the appliable requirements of 30 CFR part 18; (2) Drive... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on...

  12. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... reverse airstream shall be approved by MSHA under the appliable requirements of 30 CFR part 18; (2) Drive... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on...

  13. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... reverse airstream shall be approved by MSHA under the appliable requirements of 30 CFR part 18; (2) Drive... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on...

  14. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... reverse airstream shall be approved by MSHA under the appliable requirements of 30 CFR part 18; (2) Drive... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on...

  15. III-V-N materials for super high-efficiency multijunction solar cells

    SciTech Connect

    Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

    2012-10-06

    We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R and D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

  16. Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs

    NASA Astrophysics Data System (ADS)

    Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong

    2016-08-01

    We report characterization of the interface trap distribution (Dit(E)) over the bandgap in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) on insulator. Based only on the experimental subthreshold current data and differential coupling factor, we simultaneously obtained Dit(E) and a nonlinear mapping of the gate bias (VGS) to the trap level (Et) via the effective surface potential (ψS,eff). The proposed technique allows direct extraction of the interface traps at the In0.53Ga0.47As-on insulator (-OI) MOSFETs only from the experimental subthreshold current data. Applying the technique to the In0.53Ga0.47As channel III-V-OI MOSFETs with the gate width/length W/L = 100/50, 100/25, and 100/10 μm/μm, we obtained Dit(E) ≅ 1011-1012 eV-1 cm-2 over the bandgap without the dimension dependence.

  17. Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

    USGS Publications Warehouse

    McCleskey, R.B.; Nordstrom, D.K.; Maest, A.S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2SO4, and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO4.

  18. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  19. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    SciTech Connect

    Daix, N. Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  20. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    NASA Astrophysics Data System (ADS)

    Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

    2015-10-01

    Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

  1. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  2. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors.

    PubMed

    Wolf, Omri; Campione, Salvatore; Kim, Jin; Brener, Igal

    2016-09-19

    Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. We further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors. PMID:27661890

  3. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors.

    PubMed

    Wolf, Omri; Campione, Salvatore; Kim, Jin; Brener, Igal

    2016-09-19

    Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. We further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.

  4. Material growth and characterization directed toward improving III-V heterojunction solar cells

    NASA Technical Reports Server (NTRS)

    Stefanakos, E. K.; Alexander, W. E.; Collis, W.; Abul-Fadl, A.

    1979-01-01

    In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

  5. Calculation of strain compensation thickness for III-V semiconductor quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Polly, S. J.; Bailey, C. G.; Grede, A. J.; Forbes, D. V.; Hubbard, S. M.

    2016-11-01

    Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. These models have been assembled into a free application on nanoHUB for use by the community.

  6. Toward the Development of Group III-V Photodetectors and Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Wickenden, Dennis K.

    2003-01-01

    A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

  7. Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers

    NASA Technical Reports Server (NTRS)

    Welser, R. E.; Guido, L. J.

    1994-01-01

    We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.

  8. Iii-V Compound Multiple Quantum Well Based Modulator and Switching Devices.

    NASA Astrophysics Data System (ADS)

    Hong, Songcheol

    A general formalism to study the absorption and photocurrent in multiple quantum well is provided with detailed consideration of quantum confined Stark shift, exciton binding energy, line broadening, tunneling, polarization, and strain effects. Results on variation of exciton size, binding energies and transition energies as a function electric field and well size have been presented. Inhomogeneous line broadening of exciton lines due to interface roughness, alloy disorder and well to well size fluctuation is calculated. The potential of material tailoring by introducing strain for specific optical response is discussed. Theoretical and experimental results on excitonic and band-to-band absorption spectra in strained multi-quantum well structures are shown. I also report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched and strained multiquantum well structures in presence of transverse electric field. Photocurrent in a p-i(MQW)-n diode with monochromatic light is examined with respect to different temperatures and intensities. The negative resistance of I-V characteristic of the p-i-n diode is based on the quantum confined Stark effect of the heavy hole excitonic transition in a multiquantum well. This exciton based photocurrent characteristic allows efficient switching. A general purpose low power optical logic device using the controller-modulator concept bas been proposed and realized. The controller is a heterojunction phototransistor with multiquantum wells in the base-collector depletion region. This allows an amplified photocurrent controlled voltage feedback with low light intensity levels. Detailed analysis of the sensitivity of this device in various modes of operation is studied. Studies are also presented on the cascadability of the device as well as its integrating -thresholding properties. A multiquantum well heterojunction bipolar transistor (MHBT), which has N^+ -p^+-i(MQW)-N structure has been

  9. Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors

    NASA Astrophysics Data System (ADS)

    Keyvaninia, S.; Verstuyft, S.; Lelarge, F.; Duan, G.-H.; Messaoudene, S.; Fédéli, J. M.; Geluk, E. J.; De Vries, T.; Smalbrugge, B.; Bolk, J.; Smit, M.; Van Thourhout, D.; Roelkens, G.

    2013-05-01

    In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) - ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3μm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500μm long. mW-level waveguide coupled output power at 20°C and a side mode suppression ratio of more than 40dB is obtained.

  10. Genetic Algorithm for Innovative Device Designs in High-Efficiency III-V Nitride Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Zhu, Di; Schubert, Martin F.; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Shim, Hyunwook; Sone, Cheolsoo

    2012-01-01

    Light-emitting diodes are becoming the next-generation light source because of their prominent benefits in energy efficiency, versatility, and benign environmental impact. However, because of the unique polarization effects in III-V nitrides and the high complexity of light-emitting diodes, further breakthroughs towards truly optimized devices are required. Here we introduce the concept of artificial evolution into the device optimization process. Reproduction and selection are accomplished by means of an advanced genetic algorithm and device simulator, respectively. We demonstrate that this approach can lead to new device structures that go beyond conventional approaches. The innovative designs originating from the genetic algorithm and the demonstration of the predicted results by implementing structures suggested by the algorithm establish a new avenue for complex semiconductor device design and optimization.

  11. Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs

    NASA Astrophysics Data System (ADS)

    Hemmat, Maedeh; Kamal, Mehdi; Afzali-Kusha, Ali; Pedram, Massoud

    2016-10-01

    In this paper, the impact of physical parameter variations on the electrical characteristics of III-V TFETs is investigated. The study is performed on the operations of two optimized ultra-thin 20 nm double-gate transistors. The two device structures are InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET. The operation parameters are the ON-current, OFF-current, and threshold voltage. The investigation is performed at the device level, using a device simulator and the Monte-Carlo simulation approach is exploited to extract the distribution of electrical parameters in the presence of the process variation. The results reveal that the operation of the transistor is more sensitive to the doping of the source and gate work function compared to other physical parameters. Furthermore, the heterojunction TFETs show less sensitivity to physical parameter variations compared to the homojunction ones.

  12. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  13. TOPICAL REVIEW: Properties of the state of the art of bulk III-V nitride substrates and homoepitaxial layers

    NASA Astrophysics Data System (ADS)

    Freitas, Jaime A., Jr.

    2010-02-01

    The technological importance of III-V nitride semiconductors relies on their variety of applications, which cover optical, optoelectronic and electronic devices capable of operating under extreme values of current, voltage and temperature. The major roadblock for full realization of the potential of nitride semiconductors is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapour phase epitaxy and ammonothermal for GaN and sublimation for AlN, much more must be attained before establishing a bulk growth technique of choice to grow these materials. A brief review of the structural, optical and electronic properties of the state of the art of bulk and thick-film (quasi-bulk) nitride substrates and homoepitaxial films is presented, and a few device applications are also highlighted.

  14. Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters.

    PubMed

    De Groote, Andreas; Cardile, Paolo; Subramanian, Ananth Z; Fecioru, Alin M; Bower, Christopher; Delbeke, Danae; Baets, Roel; Roelkens, Günther

    2016-06-27

    We present the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit. Thin InP-based membranes are transferred to an SOI waveguide circuit, after which a single-spatial-mode broadband light source is fabricated. The process flow to create transfer print-ready coupons is discussed. Aqueous FeCl3 at 5°C was found to be the best release agent in combination with the photoresist anchoring structures that were used. A thin DVS-BCB layer provides a strong bond, accommodating the post-processing of the membranes. The resulting optically pumped LED has a 3 dB bandwidth of 130 nm, comparable to devices realized using a traditional die-to-wafer bonding method. PMID:27410539

  15. Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

    NASA Technical Reports Server (NTRS)

    Leon, R.; Marcinkevicius, S.; Siegert, J.; Magness, B.; Taylor, W.; Lobo, C.

    2002-01-01

    The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

  16. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  17. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  18. Engineering the cell-semiconductor interface: a materials modification approach using II-VI and III-V semiconductor materials.

    PubMed

    Bain, Lauren E; Ivanisevic, Albena

    2015-02-18

    Developing functional biomedical devices based on semiconductor materials requires an understanding of interactions taking place at the material-biosystem interface. Cell behavior is dependent on the local physicochemical environment. While standard routes of material preparation involve chemical functionalization of the active surface, this review emphasizes both biocompatibility of unmodified surfaces as well as use of topographic features in manipulating cell-material interactions. Initially, the review discusses experiments involving unmodified II-VI and III-V semiconductors - a starting point for assessing cytotoxicity and biocompatibility - followed by specific surface modification, including the generation of submicron roughness or the potential effect of quantum dot structures. Finally, the discussion turns to more recent work in coupling topography and specific chemistry, enhancing the tunability of the cell-semiconductor interface. With this broadened materials approach, researchers' ability to tune the interactions between semiconductors and biological environments continues to improve, reaching new heights in device function.

  19. Removal of Arsenic (III, V) from aqueous solution by nanoscale zero-valent iron stabilized with starch and carboxymethyl cellulose

    PubMed Central

    2014-01-01

    In this work, synthetic nanoscale zerovalent iron (NZVI) stabilized with two polymers, Starch and Carboxymethyl cellulose (CMC) were examined and compared for their ability in removing As (III) and As (V) from aqueous solutions as the most promising iron nanoparticles form for arsenic removal. Batch operations were conducted with different process parameters such as contact time, nanoparticles concentration, initial arsenic concentration and pH. Results revealed that starch stabilized particles (S-nZVI) presented an outstanding ability to remove both arsenate and arsenite and displayed ~ 36.5% greater removal for As (V) and 30% for As (III) in comparison with CMC-stabilized nanoparticles (C-nZVI). However, from the particle stabilization viewpoint, there is a clear trade off to choosing the best stabilized nanoparticles form. Removal efficiency was enhanced with increasing the contact time and iron loading but reduced with increasing initial As (III, V) concentrations and pH. Almost complete removal of arsenic (up to 500 μg/L) was achieved in just 5 min when the S-nZVI mass concentration was 0.3 g/L and initial solution pH of 7 ± 0.1. The maximum removal efficiency of both arsenic species was obtained at pH = 5 ± 0.1 and starched nanoparticles was effective in slightly acidic and natural pH values. The adsorption kinetics fitted well with pseudo-second-order model and the adsorption data obeyed the Langmuir equation with a maximum adsorption capacity of 14 mg/g for arsenic (V), and 12.2 mg/g for arsenic (III). It could be concluded that starch stabilized Fe0 nanoparticles showed remarkable potential for As (III, V) removal from aqueous solution e.g. contaminated water. PMID:24860660

  20. The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Yoshida, Shinichi; Taniguchi, Satoshi; Minari, Hideki; Lin, Dennis; Ivanov, Tsvetan; Watanabe, Heiji; Nakazawa, Masashi; Collaert, Nadine; Thean, Aaron

    2016-08-01

    We investigated the effect of a thin interfacial layer (IL) made of silicon or germanium between high-k dielectrics and III-V semiconductors on the frequency dispersion of the capacitance-voltage (C-V) curves in detail. We demonstrated experimentally that the frequency dispersion at accumulation voltage is strongly dependent on the energy barrier height (ΦB) between high-k dielectrics and semiconductors. It was revealed that the improvement of frequency dispersion for n-type III-V semiconductors with IL is attributed to the increase in ΦB realized by inserting Ge IL. Moreover, the border trap density did not necessarily decrease with IL through the assessment of border trap density using a distributed bulk-oxide trap model. Finally, we proved that it is important to increase ΦB to suppress the carrier exchange and improve high-k/III-V gate stack reliability.

  1. Iii-V Compound Semiconductor Integrated Charge Storage Structures for Dynamic and Non-Volatile Memory Elements

    NASA Astrophysics Data System (ADS)

    Hetherington, Dale Laird

    This thesis presents an investigation into a novel group of GaAs charge storage devices. These devices, which are an integration of bipolar and junction field effect transistor structures were conceived, designed, fabricated, and tested within this study. The purpose was to analyse new types of charge storage devices, which are suitable for fabrication and lead to the development of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit nondestructive reading, and three of the prototypes can be electrically erased. All types use the junction field effect transistor (JFET) for charge sensing, with each having different bipolar or epitaxial layer structure controlling the junction gate. The bottom epitaxial layer in each case served as the JFET channel. Two of the device types have three alternately doped layers, while the remaining two have four alternately doped layers. In all cases, removal of majority carriers from the middle layers constitutes stored charge. The missing carriers deplete the current carrying a region of the JFET channel. Drain current of the JFET becomes an indicator of stored charge. The basic function of each JFET memory element type is independent of interchanging n- and p- type doping within the structure type. Some performance advantage can be realized, however, by sensing with an n-type channel as compared to p- type due to increased carrier mobility. All device types exhibit storage time characteristics of order ten seconds. Devices are constructed in epitaxial layers grown by molecular beam epitaxy (MBE) reactors. The design of the epitaxial layers is an intrinsic part, together with the electrical design, of the storage device concept. These concepts are implemented first with photolithography masks which are used

  2. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  3. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Khosru, Quazi D. M.

    2016-04-01

    In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthreshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10 nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.

  4. Rapid 2D incoherent mirror fabrication by laser interference lithography and wet etching for III-V MQW solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Freundlich, Alex

    2016-03-01

    Optimization of non-planar antireflective coating and back- (or front-) surface texturing are widely studied as advanced light management approach to further reduce the reflection losses and increase the sunlight absorption path in solar cells. Rear reflectors have been developed from coherent mirrors to incoherent mirrors in order to further increase light path, which can significantly improve the efficiency and allow for much thinner devices. A Lambertian surface, which has the most random texture, can theoretically raise the light path to 4n2 times that of a smooth surface. It's a challenge however to fabricate ideal Lambertian texture, especially in a fast and low cost way. In this work, a method is developed to overcome this challenge that combines the use of laser interference lithography (LIL) and selective wet etching. This approach allows for a rapid (10 min) wafer scale (3 inch wafer) texture processing with sub-wavelength (nano)-scale control of the pattern and the pitch. The technique appears as being particularly attractive for the development of ultrathin III-V devices, or in overcoming the weak sub-bandgap absorption in devices incorporating quantum dots or quantum wells. The structure of the device is demonstrated, without affecting active layers.

  5. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGES

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  6. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect

    Russell D. Dupuis

    2004-09-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.

  7. Impact of photon recycling and luminescence coupling on III-V single and dual junction photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, Alexandre W.; Höhn, Oliver; Micha, Daniel N.; Wagner, Lukas; Helmers, Henning; Bett, Andreas W.; Dimroth, Frank

    2015-01-01

    Modeling single junction solar cells composed of III-V semiconductors such as GaAs with the effects of photon recycling yields insight into design and material criteria required for high efficiencies. For a thin-film single junction GaAs cell to reach 28.5% efficiency, simulation results using a recently developed model which accounts for photon recycling indicate that Shockley-Read-Hall (SRH) lifetimes of electrons and holes must be longer than 3 and 1 μs, respectively, in a 2-μm thin active region, and that the native substrate must be removed such that the cell is coupled to a highly reflective rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's nonradiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14% to 33% experimentally, whereas the model requires increasing electron and hole SRH lifetimes to explain these results. This could be an indication of the saturating defects which mediate the SRH process. However, intermediate GaAs layers between the two subcells may also contribute to the luminescence coupling as a function of concentration.

  8. Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

    NASA Astrophysics Data System (ADS)

    Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

    Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

  9. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  10. Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

    NASA Astrophysics Data System (ADS)

    Orchard, Jonathan R.; Wu, Jiang; Chen, Siming; Jiang, Qi; Ward, Thomas; Beanland, Richard; Lui, Huiyun; Mowbray, David

    2015-02-01

    We introduce the concept of using strained superlattice structures as defect filters, with their purpose to reduce the upwards propagation of dislocations that result from the lattice mismatch which occurs when III-V materials are grown on silicon substrates. Three samples with defect filter layers are grown on Si with and without in situ annealing and are compared to a similar structure grown on a GaAs substrate. Transmission electron microscopy is used to verify the effectiveness of the different designs grown on Si, with the twice-annealed sample reducing the number of defects present in the active region by 99.9%. Optical studies carried out exhibit brighter room temperature emission and reduced photoluminescence quenching with temperature in samples where annealing is performed. Photoluminescence excitation measurements reveal a ~20 meV redshift in the position of the GaAs exciton for the samples grown on Si compared to that of GaAs, indicating a residual inplane tensile strain ~0.35% in the GaAs of the active region for the samples grown on Si.

  11. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    SciTech Connect

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2015-11-05

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.

  12. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    DOE PAGES

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2015-11-05

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One andmore » two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.« less

  13. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  14. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  15. Understanding 'clean-up' of III-V native oxides during atomic layer deposition using bulk first principles models.

    PubMed

    Klejna, Sylwia; Elliott, Simon D

    2011-09-01

    The use of III-V materials as the channel in future transistor devices is dependent on removing the deleterious native oxides from their surface before deposition of a gate dielectric. Trimethylaluminium has been found to achieve in situ 'clean-up' of the oxides of GaAs and InGaAs before atomic layer deposition (ALD) of alumina. Here we propose six reaction mechanisms for 'clean-up,' featuring exchange of ligands between surface atoms, reduction of arsenic oxide by methyl groups and desorption of various products. We use first principles Density Functional Theory (DFT) to determine which mechanistic path is thermodynamically favoured based on models of the bulk oxides and gas-phase products. We therefore predict that 'clean-up' of arsenic oxides mostly produces As4 gas. Most C is predicted to form C2H6 but with some C2H4, CH4 and H2O. An alternative pathway is non-redox ligand exchange, which allows non-reducible oxides to be cleaned-up.

  16. III-V on silicon: Observation of gallium phosphide anti-phase disorder by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    Döscher, Henning; Borkenhagen, Benjamin; Lilienkamp, Gerhard; Daum, Winfried; Hannappel, Thomas

    2011-08-01

    The formation of anti-phase disorder is a major obstacle in the heteroepitaxy of III-V semiconductors on silicon. For an investigation of the anti-phase domain (APD) structure of GaP/Si(100) samples on mesoscopic length scales, we applied dark-field imaging in a low-energy electron microscope (LEEM) to thin GaP films grown on Si(100) substrates by metal organic vapor phase epitaxy (MOVPE). A contamination-free transfer of the samples from the MOVPE ambient to the ultra-high vacuum chamber of the microscope ensured that the atomically well-ordered, P-rich (2 × 2)/c(4 × 2) reconstruction of the surface was preserved. Mutually perpendicular oriented domains of the characteristic GaP(100) reconstruction identify the APDs in the GaP film at the surface and enabled us to achieve high contrast LEEM images. Striped patterns of APDs reflect the regular terrasse structure of the two-domain Si(100)(2 × 1) substrate far away from defects. APDs in the proximity of the defects have larger lateral extensions and are arranged in target pattern-like structures around the defects. In contrast to transmission electron microscopy, which was also applied in a specific dark-field mode for comparison, the characterization of anti-phase disorder by LEEM is non-destructive, does not require elaborate sample preparation, and addresses extended length scales.

  17. Covalent Attachment to GaP(110) - Engineering the Chemical Functionalization of a III-V Semiconductor

    NASA Astrophysics Data System (ADS)

    Bradley, A. J.; Ugeda, M. M.; Liu, Wenjun; Yu, Min; Tilley, T. Don; Pérez, Rubén; Neaton, Jeffrey B.; Crommie, M. F.

    2014-03-01

    With its 2.3 eV bulk bandgap, relatively high conduction band edge, and low chemical reactivity, the (110) surface of GaP is an excellent candidate for many UV and visible light applications, such as photo-catalysis and light-induced chemical reduction. However, the reconstruction and resulting charge transfer of the surface makes it difficult to covalently attach the required molecules. Indeed, very little work has been done to understand either covalent functionalization or passivation of this surface. Here we report on a Staudinger-type, thermally-driven covalent attachment of perfluorophenyl azide (pfpa) to GaP(110). We have studied the adsorption of pfpa molecules by means of high-resolution scanning tunneling microscopy and spectroscopy in combination with first principles calculations. We show a progression from a physisorbed state at room temperature to a covalently attached state after exposure to slightly higher temperatures (~ 50°C). The developed approach is expected to be valid for various other functional groups attached to the azide, as well as other III-V semiconductors.

  18. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  19. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D.

    2016-04-01

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2-3 × 1017 cm-3) for an injected excess carrier concentration below 4 × 1012 cm-3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  20. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    PubMed Central

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2015-01-01

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates. PMID:26537227

  1. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  2. Fabrication and Characterization of III-V Tunnel Field-Effect Transistors for Low Voltage Logic Applications

    NASA Astrophysics Data System (ADS)

    Romanczyk, Brian R.

    With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is becoming a critical factor influencing the minimum voltage margin between the transistor on and off-states. Conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) are fundamentally limited to a 60 mV/dec swing due to the thermionic emission current transport mechanism at room temperature. Tunnel field-effect transistors (TFETs) utilize band-to-band tunneling as the current transport mechanism resulting in the potential for sub-60 mV/dec subthreshold swings and have been identified as a possible replacement to the MOSFET for low-voltage logic applications. The TFET operates as a gated p-i-n diode under reverse bias where the gate electrode is placed over the intrinsic channel allowing for modulation of the tunnel barrier thickness. When the barrier is sufficiently thin the tunneling probability increases enough to allow for significant number of electrons to tunnel from the source into the channel. To date, experimental TFET reports using III-V semiconductors have failed to produce devices that combine a steep subthreshold swing with a large enough drive current to compete with scaled CMOS. This study developed the foundations for TFET fabrication by improving an established Esaki tunnel diode process flow and extending it to include the addition of a gate electrode to form a TFET. The gating process was developed using an In0.53Ga 0.57As TFET which demonstrated a minimum subthreshold slope of 100 mV/dec. To address the issue of TFET drive current an InAs/GaSb heterojunction TFET structure was investigated taking advantage of the smaller tunnel barrier height.

  3. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect

    Russell D. Dupuis

    2006-01-01

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.

  4. Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires

    SciTech Connect

    Dubrovskii, V. G.

    2014-02-03

    We present a kinetic growth model having a particular emphasis on the influence of the group V element on the preferred crystal structure of Au-catalyzed III-V nanowires. The model circumvents the uncertainty in the group V contribution into the overall liquid chemical potential. We show why the nanowire elongation rate is limited by the group III transport, while the crystal structure depends on the effective group V to III imbalance. Within the model, we are able to explain some important structural trends in Au-catalyzed III-V nanowires. In particular, we show that high group V flux always favors wurtzite structure in molecular-beam epitaxy. This tendency could be inverted in vapor deposition techniques due to suppression of the group III diffusion at high group V flux.

  5. 30 CFR 57.22222 - Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Ventilation materials (I-A, I-B, I-C, II-A, III....22222 Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). Brattice cloth and ventilation tubing shall be approved by MSHA in accordance with 30 CFR part 7, or shall bear a BC or...

  6. 30 CFR 57.22234 - Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines). 57.22234 Section 57.22234 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE SAFETY AND HEALTH SAFETY AND HEALTH STANDARDS-UNDERGROUND METAL AND NONMETAL MINES Safety...

  7. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    PubMed Central

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca i Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  8. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    NASA Astrophysics Data System (ADS)

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-05-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

  9. Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chongbiao, Luan; Zhaojun, Lin; Yuanjie, Lü; Zhihong, Feng; Jingtao, Zhao; Yang, Zhou; Ming, Yang

    2014-09-01

    Using the measured capacitance-voltage curves of Ni/Au Schottky contacts with different areas and the current-voltage characteristics for the AlGaAs/GaAs, AlGaN/AlN/GaN and In0.18 Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, the two-dimensional electron gas (2DEG) electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the III-V nitride HFETs and the AlGaAs/GaAs HFETs. In the III-V nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drain-to-source distance. While the ratio of the gate length to the drain-to-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the AlGaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the III-V nitride HFETs.

  10. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

    PubMed

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  11. GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

    PubMed

    Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

    2015-03-11

    The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms. PMID:25639492

  12. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    SciTech Connect

    Wood, Adam W. Babcock, Susan E.; Li, Jincheng; Brown, April S.

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  13. Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Choi, Sungwoo

    1992-01-01

    This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results

  14. Electron beam pumped III-V nitride vertical cavity surface emitting lasers grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ng, Hock Min

    The design and fabrication by molecular beam epitaxy of a prototype vertical cavity laser based on the III-V nitrides were investigated in this work. The bottom mirror of the laser consists of distributed Bragg reflectors (DBRs) based on quarterwave AlN (or AlxGa1-xN) and GaN layers. Such DBRs were designed for maximum reflectivity in the spectral region from 390--600 nm. The epitaxial growth of these two binaries on each other revealed that while AlN grows on GaN in a two-dimensional mode (Frank-van der Merwe mode), GaN grows on AlN in a three-dimensional mode (Stranski-Krastanov mode). In spite of that, DBRs with peak reflectance up to 99% and bandwidths of 45nm were fabricated. The measured reflectance spectra were compared with simulations using the transmission matrix method. The mechanical stability of these DBR structures due to non-uniform distribution of strain arising from lattice or thermal mismatch of the various components were also addressed. The active region of the laser consists of InGaN/GaN multiple quantum wells (MQWs). The existence of up to the third order diffraction peaks in the x-ray diffraction spectra suggests that the interfaces between InGaN and GaN are sharp with little interdiffusion at the growth temperature. The photoluminescence and cathodoluminescence spectra were analyzed to determine the optical quality of the MQWs. The best MQWs were shown to have a single emission peak at 397nm with full width half maximum (FWHM) of 11nm. Cathodoluminescence studies showed that there are spatially localized areas of intense light emission. The complete device was formed on (0001) sapphire substrates using the previously described DBRs as bottom mirrors and the MQWs as the active region. The top mirror of the device consists of metallic silver. The device was pumped by an electron beam from the top mirror side and the light output was collected from the sapphire side. Measurements at 100K showed narrowing of the linewidth with increasing pump

  15. Surface reactions during the atomic layer deposition of high-kappa dielectrics on III-V semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Ye, Liwang

    The quality of the dielectric/semiconductor interface is one of the most critical parameters for the fabrication of high-speed and low-power-consumption III-V semiconductor based metal-oxide-semiconductor field effect transistors (MOSFETs), as it determines the device performance. This dissertation contains investigations of the deposition and interface of binary oxide films on GaAs(100) and InAs(100) surfaces aiming at understanding the removal of the surface native oxides during certain atomic layer deposition (ALD) processes. To accomplish that, two complementary experimental approaches have been used. Initially, films were deposited in a conventional ALD reactor and characterized ex situ using spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and atomic force microscopy (AFM). The systems examined were Ta2O 5 on GaAs(100) surfaces from pentakis(dimethylamino) tantalum (Ta(N(CH 3)2)5, PDMAT) and TiO2 on GaAs(100) and InAs(100) surfaces from tetrakis(dimethylamino) titanium (Ti(N(CH 3)2)4, TDMAT). For these systems, deposition at the optimal ALD temperature resulted in practically sharp interfaces. Indium oxides were found to diffuse through ~ 6 nm of TiO2 film and accumulate on the topmost film layer. For the ALD of Ta2O5 on GaAs(100) surfaces, native oxide removal was enhanced at deposition temperatures above the ALD window; for ALD of TiO2 on both GaAs(100) and InAs(100) surfaces, native oxide removal was enhanced as the deposition temperatures increased up to 250 A°C, while oxidation of the interface was observed for deposition above 300 A°C due to the formation of noncontinuous films. To elucidate the surface reactions occurring during the deposition, an in situ attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy apparatus was constructed and used to investigate the surface reactions during the ALD of TiO2 and HfO2 on GaAs(100) surfaces. The

  16. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    SciTech Connect

    Hurle, D. T. J.

    2010-06-15

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature 'intrinsic' electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the Ga{sub Sb} antisite defect appears to be grown-in from the melt. This contrasts with the As{sub Ga} defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n{sup +} GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and In

  17. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    PubMed

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  18. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

    PubMed

    Kazior, Thomas E

    2014-03-28

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

  19. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    PubMed

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology. PMID:26824274

  20. Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

    DOEpatents

    Norman, Andrew G.; Olson, Jerry M.

    2007-06-12

    Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

  1. Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band.

    PubMed

    Duprez, Helene; Jany, Christophe; Seassal, Christian; Ben Bakir, Badhise

    2016-09-01

    We report on the design, fabrication and performance of the first hetero-integrated III-V on silicon sampled-grating distributed Bragg reflector lasers (SGDBR) operating in the O-band and based on direct bonding and adiabatic coupling. Two devices with different geometric parameters are presented both showing an output power in the Si waveguide as high as 7.5 mW and a continuous tuning range of 27 and 35 nm respectively with a side mode suppression ration higher than 35 dB. PMID:27607693

  2. A study on room-temperature photoluminescence and crystallinity of RF-sputtered GaN for a cost-effective III-V-on-Si platform

    NASA Astrophysics Data System (ADS)

    Lee, Jeongmin; Kim, Hong-Seok; Han, Jae-Hee; Cho, Seongjae

    2015-11-01

    Recently, Si technology has been searching for ways to develop Si-driven future electronics by overcoming the limitations in its electrical and optical properties through more Moore (MM), morethan- Moore (MtM), and beyond complementary metal-oxide-semiconductor (CMOS) approaches. Among the suggested strategies, III-V-on-Si heterogeneous integration can be a solution that allows the merger of III-V-based devices and Si CMOS logic blocks on Si monolithically and costeffectively. GaN has wide applicability owing to its high electron mobility and large energy bandgap for high-speed low-power transistors and visible light sources. In this work, the room-temperature photoluminescence (PL) characteristics and the crystallinity of GaN-on-Si were empirically studied. GaN was deposited by using RF sputtering on p-type Si substrates. The results show that the peak location near 520 nm does not vary with the wavelength of the excitation laser, which is strongly supported by the fact that the signals are not from higher-order harmonics but are genuinely from the prepared GaN. Further, a sharp peak is observed in the X-ray diffraction (XRD) analysis cooperatively performed with PL experiments. Consequently, partially-crystallized GaN has been obtained on Si by using conventional CMOS processing with a low thermal budget and high cost-effectiveness.

  3. Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    NASA Astrophysics Data System (ADS)

    Haneji, Nobuo; Segami, Goh; Ide, Tomoyoshi; Suzuki, Tatsuya; Arakawa, Taro; Tada, Kunio; Shimogaki, Yukihiro; Nakano, Yoshiaki

    2003-06-01

    Electron cyclotron resonance-reactive ion etching (ECR-RIE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching III-V semiconductors, but the carbon polymer film deposited on the surface during the etching process presents some problems. Thus, the polymer film must be ashed off using an O2 plasma. We introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIE, and demonstrated that it was very useful for etching of InP. However, compound semiconductors containing Al (e.g., AlGaAs and InAlAs) react with oxygen and an alumina layer is formed, which cannot be etched by CH4/H2 etching. Therefore, we used a new cyclic etching process with constant Ar flow in the chamber to remove this alumina layer by Ar ion etching, and obtained good results for etching rate and surface morphology for the compound semiconductors containing Al. We also proposed a suitable combination of three cyclic etching procedures (continuous etching, cyclic etching without constant Ar flow and cyclic etching with constant Ar flow) for etching the multilayer heterostructure of III-V semiconductors including InP and/or compound semiconductors containing Al.

  4. Self-Interaction Corrections to the Electronic Structure of II-VI and III-V Nitride Semiconductors

    NASA Astrophysics Data System (ADS)

    Pollmann, J.

    1998-03-01

    II-VI and group-III nitride semiconductors have paramount technological potential for applications in micro- and optoelectronics. A most accurate description of their bulk electronic structure as a basis for studying defect properties, band-edge properties in respective ternary or quaternary alloys and electronic properties of their surfaces and interfaces is of major importance, therefore. Standard LDA band-structure calculations for these wide-band-gap compounds using nonlocal normconserving pseudopotentials yield gap energies and semicore d-band positions that are largely at variance with experimental data. Actually, InN even turns out to be a semimetal with a negative gap of about --0.4 eV in standard LDA, in contrast to the experimental gap of 1.9 eV. To improve the theoretical basis for the above mentioned studies, we have developed self-interaction- and relaxation-corrected pseudopotentials (SIRC-PPs) which are very efficient and physically well-founded. The properties of the constituent atoms are incorporated in these SIRC-PPs as accurately as possible from the start by taking atomic SIC contributions and electronic relaxation in the atoms fully into account. By this construction, we arrive at very useful pseudopotentials and effective one-particle Hamiltonians for the solids that can readily be employed in ab-initio LDA codes. This approach is computationally not more involved than any LDA calculation and, nevertheless, overcomes to a large extent the above mentioned shortcomings of standard LDA calculations employing 'state-of-the-art' pseudopotentials. Applications of our approach to II-VI and group-III nitride semiconductors have shown very gratifying results. The approach has also proven very useful for Hg-chalcogenides, as well as, for Ag- and Cu-halides. The calculations yield band structures, d-band positions, gap energies, densities of states, lattice constants, bulk moduli and effective masses in very good agreement with experiment. Due to the

  5. The recombination velocity at III-V compound heterojunctions with applications to Al (x) Ga(1-x)As-GaAs(1-y)Sb(y)

    NASA Technical Reports Server (NTRS)

    Kim, J. S.

    1978-01-01

    Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.

  6. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P.

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  7. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

    NASA Astrophysics Data System (ADS)

    Ramón, Michael E.; Akyol, Tarik; Shahrjerdi, Davood; Young, Chadwin D.; Cheng, Julian; Register, Leonard F.; Banerjee, Sanjay K.

    2013-01-01

    We report measurement of fast transient charging effects (FTCE) in enhancement-mode n-channel GaAs, InP, and In0.53Ga0.47As field-effect transistors (FETs) using Al2O3 as the gate dielectric. The FTCE data reveal superior drive current and enhanced threshold voltage stability for In0.53Ga0.47As FETs. We further report charge pumping measurements for In0.53Ga0.47As transistors, revealing that the majority of interface traps are donor traps, as well as an increased trap density within the Al2O3 bulk. Such data, together with FTCE data, reveal that drain current degradation observed during pulsed I-V measurements is predominantly due to slow oxide traps, underscoring their significance within III-V/high-κ metal-oxide-semiconductor FETs.

  8. Generation of new spatial and temporal coherent light states using III-V semiconductor laser technology: VORTEX, continuum, dual frequency for THz

    NASA Astrophysics Data System (ADS)

    Garnache, Arnaud; Seghilani, Mohamed; Paquet, Romain; Sellhai, Mohamed; Chomet, Baptiste; Myara, Mikhal; Blin, Stephane; Sagnes, Isabelle; Beaudoin, Gregoire; Legratiet, Luc; Lalanne, Philippe

    2016-03-01

    We take advantage of III-V VeCSEL technology integrating at-photonics for the generation of new coherent states, thanks to insertion of intracavity functions based on at photonics. These new kinds of coherent light states target many applications including optical tweezers, telecommunications, fundamental physics, sensors For this purpose, we extended the VeCSEL semiconductor technology, designing active sections, sub-wavelength metallic masks and photonic crystal, enabling to control the electrical field inside the cavity. This leads to the generation and control of highly coherent single high-order Laguerre- or Hermite-Gauss mode, VORTEX beam carrying controlled orbital-angular-momentum, as well as of coherent dual-frequency wave for THz, and of coherent continuum modeless source.

  9. Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

    NASA Astrophysics Data System (ADS)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey; Cardimona, David; Krishna, Sanjay

    For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

  10. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P.

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell`s efficiency less dependent on materialquality.

  11. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    PubMed

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure. PMID:26726356

  12. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    NASA Astrophysics Data System (ADS)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  13. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.; Miller, W. E.

    1988-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

  14. Is kidney function affecting the management of myocardial infarction? A retrospective cohort study in patients with normal kidney function, chronic kidney disease stage III-V, and ESRD.

    PubMed

    Saad, Marc; Karam, Boutros; Faddoul, Geovani; Douaihy, Youssef El; Yacoub, Harout; Baydoun, Hassan; Boumitri, Christine; Barakat, Iskandar; Saifan, Chadi; El-Charabaty, Elie; Sayegh, Suzanne El

    2016-01-01

    Patients with chronic kidney disease (CKD) are three times more likely to have myocardial infarction (MI) and suffer from increased morbidity and higher mortality. Traditional and unique risk factors are prevalent and constitute challenges for the standard of care. However, CKD patients have been largely excluded from clinical trials and little evidence is available to guide evidence-based treatment of coronary artery disease in patients with CKD. Our objective was to assess whether a difference exists in the management of MI (ST-segment elevation myocardial infarction and non-ST-segment elevation myocardial infarction) among patients with normal kidney function, CKD stage III-V, and end-stage renal disease (ESRD) patients. We conducted a retrospective cohort study on patients admitted to Staten Island University Hospital for the diagnosis of MI between January 2005 and December 2012. Patients were assigned to one of three groups according to their kidney function: Data collected on the medical management and the use of statins, platelet inhibitors, beta-blockers, and angiotensin converting enzyme inhibitors/angiotensin receptor blockers were compared among the three cohorts, as well as medical interventions including: catheterization and coronary artery bypass graft (CABG) when indicated. Chi-square test was used to compare the proportions between nominal variables. Binary logistic analysis was used in order to determine associations between treatment modalities and comorbidities, and to account for possible confounding factors. Three hundred and thirty-four patients (mean age 67.2±13.9 years) were included. In terms of management, medical treatment was not different among the three groups. However, cardiac catheterization was performed less in ESRD when compared with no CKD and CKD stage III-V (45.6% vs 74% and 93.9%) (P<0.001). CABG was performed in comparable proportions in the three groups and CABG was not associated with the degree of CKD (P=0.078) in binary

  15. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    PubMed Central

    2011-01-01

    Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea PMID:21711946

  16. Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications.

    PubMed

    Leem, Jung Woo; Lee, Hee Kwan; Jun, Dong-Hwan; Heo, Jonggon; Park, Won-Kyu; Park, Jin-Hong; Yu, Jae Su

    2014-03-10

    We report the efficiency enhancement of III-V InGaP/GaAs/ Ge triple-junction (TJ) solar cells using a novel structure, i.e., vertically-oriented gallium oxide hydroxide (GaOOH) nanopillars (NPs), as an antireflection coating. The optical reflectance properties of rhombus-shaped GaOOH NPs, which were synthesized by a simple, low-cost, and large-scalable electrochemical deposition method, were investigated, together with a theoretical analysis using the rigorous coupled-wave analysis method. For the GaOOH NPs, the solar weighted reflectance of ~8.5% was obtained over a wide wavelength range of 300-1800 nm and their surfaces exhibited a high water contact angle of ~130° (i.e., hydrophobicity). To simply demonstrate the feasibility of device applications, the GaOOH NPs were incorporated into a test-grown InGaP/GaAs/Ge TJ solar cell structure. For the InGaP/GaAs/Ge TJ solar cell with broadband antireflective GaOOH NPs, the conversion efficiency (η) of ~16.47% was obtained, indicating an increased efficiency by 3.47% compared to the bare solar cell (i.e., η~13%).

  17. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  18. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    NASA Astrophysics Data System (ADS)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  19. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  20. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    SciTech Connect

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang; Gao, Kun; Helm, M.; Weschke, E.; Gordan, O.; Salvan, G.; Zahn, D. R. T.

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  1. Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires.

    PubMed

    Heo, Hoseok; Kang, Kibum; Lee, Donghun; Jin, Li-Hua; Back, Hyeon-Jun; Hwang, Inchan; Kim, Miseong; Lee, Hyun-Seung; Lee, Byeong-Joo; Yi, Gyu-Chul; Cho, Yong-Hoon; Jo, Moon-Ho

    2012-02-01

    Planar defects in compound (III-V and II-VI) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and light emissions. Here we report a simple synthetic route for planar-defect free II-VI NWs by tunable alloying, i.e. Cd(1-x)Zn(x)Te NWs (0 ≤ x ≤ 1). It is discovered that the eutectic alloying of Cd and Zn in Au catalysts immediately alleviates interfacial instability during the catalytic growth by the surface energy minimization and forms homogeneous zinc blende crystals as opposed to unwanted zinc blende/wurtzite mixtures. As a direct consequence of the tunable alloying, we demonstrated that intrinsic energy band gap modulation in Cd(1-x)Zn(x)Te NWs can exploit the tunable spectral and temporal responses in light detection and emission in the full visible range.

  2. Revetements antireflet-passivation a base de nitrure de silicium PECVD pour cellules solaires triple-jonction III-V/ Ge

    NASA Astrophysics Data System (ADS)

    Homier, Ram

    Dans le contexte environnemental actuel, le photovoltaïque bénéficie de l'augmentation des efforts de recherche dans le domaine des énergies renouvelables. Pour réduire le coût de la production d'électricité par conversion directe de l'énergie lumineuse en électricité, le photovoltaïque concentré est intéressant. Le principe est de concentrer une grande quantité d'énergie lumineuse sur des petites surfaces de cellules solaires multi-jonction à haute efficacité. Lors de la fabrication d'une cellule solaire, il est essentiel d'inclure une méthode pour réduire la réflexion de la lumière à la surface du dispositif. Le design d'un revêtement antireflet (ARC) pour cellules solaires multi-jonction présente des défis à cause de la large bande d'absorption et du besoin d'égaliser le courant produit par chaque sous-cellule. Le nitrure de silicium déposé par PECVD en utilisant des conditions standards est largement utilisé dans l'industrie des cellules solaires à base de silicium. Cependant, ce diélectrique présente de l'absorption dans la plage des courtes longueurs d'onde. Nous proposons l'utilisation du nitrure de silicium déposé par PECVD basse fréquence (LFSiN) optimisé pour avoir un haut indice de réfraction et une faible absorption optique pour l'ARC pour cellules solaires triple-jonction III-V/Ge. Ce matériau peut aussi servir de couche de passivation/encapsulation. Les simulations montrent que l'ARC double couche SiO2/LFSiN peut être très efficace pour réduire les pertes par réflexion dans la plage de longueurs d'onde de la sous-cellule limitante autant pour des cellules solaires triple-jonction limitées par la sous-cellule du haut que pour celles limitées par la sous-cellule du milieu. Nous démontrons aussi que la performance de la structure est robuste par rapport aux fluctuations des paramètres des couches PECVD (épaisseurs, indice de réfraction). Mots-clés : Photovoltaïque concentré (CPV), cellules

  3. Alloy materials

    DOEpatents

    Hans Thieme, Cornelis Leo; Thompson, Elliott D.; Fritzemeier, Leslie G.; Cameron, Robert D.; Siegal, Edward J.

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  4. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    NASA Astrophysics Data System (ADS)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  5. Investigating the growth, structural and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Andrew

    Extensive research efforts have been devoted to the study and development of III-V compound semiconductor nanowires (NWs) and nanopillars (NPs) because of their unique physical properties and ability to form high quality, highly lattice-mismatched axial and radial heterostructures. These advantages lead to precise nano-bandgap engineering to achieve new device functionalities. One unique and powerful approach to realize these NPs is by catalyst-free, selective-area epitaxy (SAE) via metal-organic chemical vapor deposition, in which the NP location and diameter can be precisely controlled lithographically. Early demonstrations of electronic and optoelectronic devices based on these NPs, however, are often inferior compared to their planar counterparts due to a few factors: (1) interface/surface states, (2) inaccurate doping calibration, and (3) increased carrier scattering and trapping from stacking fault formation in the NPs. In this study, the detailed growth mechanisms of different III-As, III-Sb and III-P NPs and their heterostructures are investigated. These NPs are then fabricated into single-NP field-effect transistors (FETs) to probe their electrical properties. It is shown that these devices are highly diameter-dependent, mainly because of the effects of surface states. By growing a high band-gap shell around the NP cores to passivate the surface, the device performance can be significantly improved. Further fabrication and characterization of vertical surround-gate FETs using a high-mobility InAs/InP NP channel is also discussed. Aside from the radial NP heterostructures, different approaches to achieve purely axial heterostructures in InAs/In(As)P materials are also presented with excellent interface quality. Both single barrier and double barrier structures are realized and fabricated into devices that show carrier transport characteristics over a barrier and even resonant tunneling behavior. Antimonide-based NPs are also studied for their immense

  6. III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

    NASA Astrophysics Data System (ADS)

    Chiu, YenTing

    This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

  7. Ballistic transport in II-VI semiconductor compounds and alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Krishnamurthy, S.; Sher, A.; Chen, A.-B.

    1988-01-01

    Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

  8. Arsenic(III, V) adsorption on a goethite-based adsorbent in the presence of major co-existing ions: Modeling competitive adsorption consistent with spectroscopic and molecular evidence

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masakazu; Young, Thomas M.; Fukushi, Keisuke; Green, Peter G.; Darby, Jeannie L.

    2013-04-01

    Adsorption of the two oxyanions, arsenate (As(V)) and arsenite (As(III)), on a common goethite-based granular porous adsorbent is studied in the presence of major co-existing ions in groundwater (i.e., phosphate, silicic acid, sulfate, carbonate, magnesium, and calcium) and predicted using the extended triple layer model (ETLM), a dipole modified single-site triple layer surface complexation model consistent with spectroscopic and molecular evidence. Surface species of all ions were selected according to the previous ETLM studies and published experimental spectroscopic/theoretical molecular information. The adsorption equilibrium constants for all ions were determined using adsorption data obtained in single-solute systems. The adsorption equilibrium constants referenced to the site-occupancy standard state (indicated by Kθ) were compared with those for goethite in the literature if available. The values of these constants for the goethite-based adsorbent are found to be close to the values for goethite previously studied. These "constrained" adsorption equilibrium constants determined in single-solute systems were used in the ETLM to predict the competitive interactions of As(III, V) with the co-existing ions in binary-solute systems. The ETLM is capable of predicting As(III, V) adsorption in the presence of oxyanions (phosphate, silicic acid, sulfate, and carbonate). This study presents the first successful and systematic prediction of the competitive interactions of As(III, V) with these oxyanions using the ETLM. The ETLM prediction of surface (and aqueous) speciation also provides insights into the distinct adsorption behavior of As(III, V) in the presence of the oxyanions. Magnesium and calcium significantly enhanced As(V) adsorption at higher pH values, while they had little effect on As(III) adsorption. The enhanced adsorption of As(V), however, could not be predicted by the ETLM using the surface species proposed in previous ETLM studies. Further studies

  9. Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems

    NASA Astrophysics Data System (ADS)

    Fan, W. J.; Bose, Sumanta; Zhang, D. H.

    2016-09-01

    Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 μm optical communication systems. Incorporating dilute amounts of bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaNxBiy As1 -x -y /GaAs quaternary alloy quantum well (QW) based on the 16-band k .p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing and valence band anticrossing model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain, and differential gain and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 μm. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN3 Bi5.17 As91.83 lattice matched QW was most suited for 1.55 μm (0.8 eV) GaAs-based photonic applications.

  10. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1963-02-26

    A brazing alloy which, in the molten state, is characterized by excellent wettability and flowability, said alloy being capable of forming a corrosion resistant brazed joint wherein at least one component of said joint is graphite and the other component is a corrosion resistant refractory metal, said alloy consisting essentially of 20 to 50 per cent by weight of gold, 20 to 50 per cent by weight of nickel, and 15 to 45 per cent by weight of molybdenum. (AEC)

  11. VANADIUM ALLOYS

    DOEpatents

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  12. Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In1-xGaxAs channel capping layer

    NASA Astrophysics Data System (ADS)

    Huang, Cheng-Hao; Li, Yiming

    2015-06-01

    In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In1-xGaxAs/In0.53Ga0.47As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In0.68Ga0.32As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85o is needed for the device with an averaged grain size of NiSi below 4x4 nm2.

  13. URANIUM ALLOYS

    DOEpatents

    Seybolt, A.U.

    1958-04-15

    Uranium alloys containing from 0.1 to 10% by weight, but preferably at least 5%, of either zirconium, niobium, or molybdenum exhibit highly desirable nuclear and structural properties which may be improved by heating the alloy to about 900 d C for an extended period of time and then rapidly quenching it.

  14. ZIRCONIUM ALLOY

    DOEpatents

    Wilhelm, H.A.; Ames, D.P.

    1959-02-01

    A binary zirconiuin--antimony alloy is presented which is corrosion resistant and hard containing from 0.07% to 1.6% by weight of Sb. The alloys have good corrosion resistance and are useful in building equipment for the chemical industry.

  15. Nonswelling alloy

    DOEpatents

    Harkness, S.D.

    1975-12-23

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses.

  16. Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

    SciTech Connect

    Schnohr, C. S.

    2015-09-15

    Compound semiconductor alloys such as In{sub x}Ga{sub 1−x}As, GaAs{sub x}P{sub 1−x}, or CuIn{sub x}Ga{sub 1−x}Se{sub 2} are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI{sub 2} chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

  17. A standards-based method for compositional analysis by energy dispersive X-ray spectrometry using multivariate statistical analysis: application to multicomponent alloys.

    PubMed

    Rathi, Monika; Ahrenkiel, S P; Carapella, J J; Wanlass, M W

    2013-02-01

    Given an unknown multicomponent alloy, and a set of standard compounds or alloys of known composition, can one improve upon popular standards-based methods for energy dispersive X-ray (EDX) spectrometry to quantify the elemental composition of the unknown specimen? A method is presented here for determining elemental composition of alloys using transmission electron microscopy-based EDX with appropriate standards. The method begins with a discrete set of related reference standards of known composition, applies multivariate statistical analysis to those spectra, and evaluates the compositions with a linear matrix algebra method to relate the spectra to elemental composition. By using associated standards, only limited assumptions about the physical origins of the EDX spectra are needed. Spectral absorption corrections can be performed by providing an estimate of the foil thickness of one or more reference standards. The technique was applied to III-V multicomponent alloy thin films: composition and foil thickness were determined for various III-V alloys. The results were then validated by comparing with X-ray diffraction and photoluminescence analysis, demonstrating accuracy of approximately 1% in atomic fraction. PMID:23298470

  18. A standards-based method for compositional analysis by energy dispersive X-ray spectrometry using multivariate statistical analysis: application to multicomponent alloys.

    PubMed

    Rathi, Monika; Ahrenkiel, S P; Carapella, J J; Wanlass, M W

    2013-02-01

    Given an unknown multicomponent alloy, and a set of standard compounds or alloys of known composition, can one improve upon popular standards-based methods for energy dispersive X-ray (EDX) spectrometry to quantify the elemental composition of the unknown specimen? A method is presented here for determining elemental composition of alloys using transmission electron microscopy-based EDX with appropriate standards. The method begins with a discrete set of related reference standards of known composition, applies multivariate statistical analysis to those spectra, and evaluates the compositions with a linear matrix algebra method to relate the spectra to elemental composition. By using associated standards, only limited assumptions about the physical origins of the EDX spectra are needed. Spectral absorption corrections can be performed by providing an estimate of the foil thickness of one or more reference standards. The technique was applied to III-V multicomponent alloy thin films: composition and foil thickness were determined for various III-V alloys. The results were then validated by comparing with X-ray diffraction and photoluminescence analysis, demonstrating accuracy of approximately 1% in atomic fraction.

  19. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A. B.

    1986-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.

  20. PLUTONIUM ALLOYS

    DOEpatents

    Chynoweth, W.

    1959-06-16

    The preparation of low-melting-point plutonium alloys is described. In a MgO crucible Pu is placed on top of the lighter alloying metal (Fe, Co, or Ni) and the temperature raised to 1000 or 1200 deg C. Upon cooling, the alloy slug is broke out of the crucible. With 14 at. % Ni the m.p. is 465 deg C; with 9.5 at. % Fe the m.p. is 410 deg C; and with 12.0 at. % Co the m.p. is 405 deg C. (T.R.H.) l6262 l6263 ((((((((Abstract unscannable))))))))

  1. BRAZING ALLOYS

    DOEpatents

    Donnelly, R.G.; Gilliland, R.G.; Slaughter, G.M.

    1962-02-20

    A brazing alloy is described which, in the molten state, is characterized by excellent wettability and flowability and is capable of forming a corrosion-resistant brazed joint. At least one component of said joint is graphite and the other component is a corrosion-resistant refractory metal. The brazing alloy consists essentially of 40 to 90 wt % of gold, 5 to 35 wt% of nickel, and 1 to 45 wt% of tantalum. (AEC)

  2. COATED ALLOYS

    DOEpatents

    Harman, C.G.; O'Bannon, L.S.

    1958-07-15

    A coating is described for iron group metals and alloys, that is particularly suitable for use with nickel containing alloys. The coating is glassy in nature and consists of a mixture containing an alkali metal oxide, strontium oxide, and silicon oxide. When the glass coated nickel base metal is"fired'' at less than the melting point of the coating, it appears the nlckel diffuses into the vitreous coating, thus providing a closely adherent and protective cladding.

  3. Multiple doping of silicon-germanium alloys for thermoelectric applications

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

    1989-01-01

    It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

  4. Epitaxial growth in dislocation-free strained asymmetric alloy films

    SciTech Connect

    Desai, Rashmi C.; Kim, Ho Kwon; Chatterji, Apratim; Ngai, Darryl; Chen Si; Yang Nan

    2010-06-15

    Epitaxial growth in strained asymmetric, dislocation-free, coherent, alloy films is explored. Linear-stability analysis is used to theoretically analyze the coupled instability arising jointly from the substrate-film lattice mismatch (morphological instability) and the spinodal decomposition mechanism. Both the static and growing films are considered. Role of various parameters in determining stability regions for a coherent growing alloy film is investigated. In addition to the usual parameters: lattice mismatch {epsilon}, solute-expansion coefficient {eta}, growth velocity V, and growth temperature T, we consider the alloy asymmetry arising from its mean composition. The dependence of elastic moduli on composition fluctuations and the coupling between top surface and underlying bulk of the film also play important roles. The theory is applied to group III-V films such as GaAsN, InGaN, and InGaP and to group IV Si-Ge films at temperatures below the bare critical temperature T{sub c} for strain-free spinodal decomposition. The dependences of various material parameters on mean concentration and temperature lead to significant qualitative changes.

  5. Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires.

    PubMed

    Heo, Hoseok; Kang, Kibum; Lee, Donghun; Jin, Li-Hua; Back, Hyeon-Jun; Hwang, Inchan; Kim, Miseong; Lee, Hyun-Seung; Lee, Byeong-Joo; Yi, Gyu-Chul; Cho, Yong-Hoon; Jo, Moon-Ho

    2012-02-01

    Planar defects in compound (III-V and II-VI) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and light emissions. Here we report a simple synthetic route for planar-defect free II-VI NWs by tunable alloying, i.e. Cd(1-x)Zn(x)Te NWs (0 ≤ x ≤ 1). It is discovered that the eutectic alloying of Cd and Zn in Au catalysts immediately alleviates interfacial instability during the catalytic growth by the surface energy minimization and forms homogeneous zinc blende crystals as opposed to unwanted zinc blende/wurtzite mixtures. As a direct consequence of the tunable alloying, we demonstrated that intrinsic energy band gap modulation in Cd(1-x)Zn(x)Te NWs can exploit the tunable spectral and temporal responses in light detection and emission in the full visible range. PMID:22268369

  6. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGES

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  7. Hybrid III-V Silicon Lasers

    NASA Astrophysics Data System (ADS)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  8. Alloy softening in binary molybdenum alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of Hf, Ta, W, Re, Os, Ir, and Pt on the hardness of Mo. Special emphasis was placed on alloy softening in these binary Mo alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to Mo, while those elements having an equal number or fewer s+d electrons than Mo failed to produce alloy softening. Alloy softening and hardening can be correlated with the difference in number of s+d electrons of the solute element and Mo.

  9. GaSb based ternary and quaternary diffused junction devices for TPV applications

    SciTech Connect

    Sundaram, V.S.; Saban, S.B.; Morgan, M.D.; Horne, W.E.; Evans, B.D.; Ketterl, J.R.; Morosini, M.B.; Patel, N.B.; Field, H.

    1997-03-01

    In this work we report the characteristics of ternary, GaInSb (Eg=0.70eV) and quarternary, GaInAsSb (Eg=0.5eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8A/cm{sup 2}, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8A/cm{sup 2}, respectively. The peak internal quantum efficiency for the ternary is over 90{percent} and that of the quarternary is above 75{percent}. Process optimization should improve the performance charcateristics of the quarternary. {copyright} {ital 1997 American Institute of Physics.}

  10. Distributed feedback GaSb based laser diodes with buried grating

    SciTech Connect

    Gaimard, Q.; Cerutti, L.; Teissier, R.; Vicet, A.

    2014-04-21

    We report on the growth, fabrication, and experimental study of distributed feed-back antimonide diode lasers with buried grating. A second order index-coupled grating was defined by interferometric lithography on the top of the laser waveguide and dry etched by reactive ion etching. The grating was then buried thanks to an overgrowth of the top cladding layer using molecular beam epitaxy. The wafer was then processed using standard photolithography and wet etching into 15 μm-wide laser ridges. Single frequency laser emission at a wavelength of 2.2 μm was measured with a side mode suppression ratio of 34 dB, a maximum output power of 30 mW, and a total continuous tuning range of 6.5 nm.

  11. Metal alloy identifier

    DOEpatents

    Riley, William D.; Brown, Jr., Robert D.

    1987-01-01

    To identify the composition of a metal alloy, sparks generated from the alloy are optically observed and spectrographically analyzed. The spectrographic data, in the form of a full-spectrum plot of intensity versus wavelength, provide the "signature" of the metal alloy. This signature can be compared with similar plots for alloys of known composition to establish the unknown composition by a positive match with a known alloy. An alternative method is to form intensity ratios for pairs of predetermined wavelengths within the observed spectrum and to then compare the values of such ratios with similar values for known alloy compositions, thereby to positively identify the unknown alloy composition.

  12. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  13. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, O.B.; Lear, K.L.

    1998-03-10

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  14. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  15. Novel ferromagnetism in digital GaAs/Mn and GaSb/Mn alloys

    NASA Astrophysics Data System (ADS)

    McCombe, B. D.; Na, M.; Chen, X.; Cheon, M.; Wang, S.; Luo, H.; Liu, X.; Sasaki, Y.; Wojtowicz, T.; Furdyna, J. K.; Potashnik, S. J.; Schiffer, P.

    2003-01-01

    Ferromagnetic III-Mn-V semiconductors are under intensive investigation for spintronic applications. In the present work digital alloys of GaAs/Mn and GaSb/Mn were fabricated by a combination of molecular beam epitaxy and atomic layer epitaxy. The Mn fraction in the layers was varied at constant III-V spacer thickness, and the III-V spacer-layer thickness was varied at constant Mn fraction (0.5 monolayer). Transmission electron micrographs showed good crystal quality with no evidence of three-dimensional (3D) Mn-V precipitates. The GaAs/Mn samples have Curie temperatures in the vicinity of 40 K and exhibit an anomalous Hall effect (AHE) similar to that seen in GaMnAs random alloys. These samples all show thermally activated resistance at zero field, characteristic of hopping conduction with evidence of Coulomb-gap-like behavior. The GaSb/Mn samples exhibit ferromagnetism (with temperature dependent hysteresis loops) and a strong AHE up to 400 K. At low temperatures the remanent magnetization initially drops rapidly with increasing temperature, indicative of Curie temperatures between 10 and 50 K depending on the Mn concentration. However, a substantial remanent magnetization persists to high temperature, suggesting a second phase with a Curie temperature above 400 K. These samples all showed essentially metallic behavior and weak negative magnetoresistance at low temperatures. These results are discussed in the context of a model of quasi-2D MnSb islands (for which there is direct evidence) embedded in a matrix of GaMnSb in the Mn-containing layers.

  16. Turbine Blade Alloy

    NASA Technical Reports Server (NTRS)

    MacKay, Rebecca

    2001-01-01

    The High Speed Research Airfoil Alloy Program developed a fourth-generation alloy with up to an +85 F increase in creep rupture capability over current production airfoil alloys. Since improved strength is typically obtained when the limits of microstructural stability are exceeded slightly, it is not surprising that this alloy has a tendency to exhibit microstructural instabilities after high temperature exposures. This presentation will discuss recent results obtained on coated fourth-generation alloys for subsonic turbine blade applications under the NASA Ultra-Efficient Engine Technology (UEET) Program. Progress made in reducing microstructural instabilities in these alloys will be presented. In addition, plans will be presented for advanced alloy development and for computational modeling, which will aid future alloy development efforts.

  17. Separation in Binary Alloys

    NASA Technical Reports Server (NTRS)

    Frazier, D. O.; Facemire, B. R.; Kaukler, W. F.; Witherow, W. K.; Fanning, U.

    1986-01-01

    Studies of monotectic alloys and alloy analogs reviewed. Report surveys research on liquid/liquid and solid/liquid separation in binary monotectic alloys. Emphasizes separation processes in low gravity, such as in outer space or in free fall in drop towers. Advances in methods of controlling separation in experiments highlighted.

  18. SUPERCONDUCTING VANADIUM BASE ALLOY

    DOEpatents

    Cleary, H.J.

    1958-10-21

    A new vanadium-base alloy which possesses remarkable superconducting properties is presented. The alloy consists of approximately one atomic percent of palladium, the balance being vanadium. The alloy is stated to be useful in a cryotron in digital computer circuits.

  19. PLUTONIUM-THORIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.

    1959-09-15

    New plutonium-base binary alloys useful as liquid reactor fuel are described. The alloys consist of 50 to 98 at.% thorium with the remainder plutonium. The stated advantages of these alloys over unalloyed plutonium for reactor fuel use are easy fabrication, phase stability, and the accompanying advantuge of providing a means for converting Th/sup 232/ into U/sup 233/.

  20. DELTA PHASE PLUTONIUM ALLOYS

    DOEpatents

    Cramer, E.M.; Ellinger, F.H.; Land. C.C.

    1960-03-22

    Delta-phase plutonium alloys were developed suitable for use as reactor fuels. The alloys consist of from 1 to 4 at.% zinc and the balance plutonium. The alloys have good neutronic, corrosion, and fabrication characteristics snd possess good dimensional characteristics throughout an operating temperature range from 300 to 490 deg C.

  1. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1- x Ga x N and Ga1- x In x N and anion-substituted CdS1- x Se x and ZnO1- x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  2. High strength alloys

    DOEpatents

    Maziasz, Phillip James [Oak Ridge, TN; Shingledecker, John Paul [Knoxville, TN; Santella, Michael Leonard [Knoxville, TN; Schneibel, Joachim Hugo [Knoxville, TN; Sikka, Vinod Kumar [Oak Ridge, TN; Vinegar, Harold J [Bellaire, TX; John, Randy Carl [Houston, TX; Kim, Dong Sub [Sugar Land, TX

    2010-08-31

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

  3. High strength alloys

    DOEpatents

    Maziasz, Phillip James; Shingledecker, John Paul; Santella, Michael Leonard; Schneibel, Joachim Hugo; Sikka, Vinod Kumar; Vinegar, Harold J.; John, Randy Carl; Kim, Dong Sub

    2012-06-05

    High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

  4. Creep Resistant Zinc Alloy

    SciTech Connect

    Frank E. Goodwin

    2002-12-31

    This report covers the development of Hot Chamber Die Castable Zinc Alloys with High Creep Strengths. This project commenced in 2000, with the primary objective of developing a hot chamber zinc die-casting alloy, capable of satisfactory service at 140 C. The core objectives of the development program were to: (1) fill in missing alloy data areas and develop a more complete empirical model of the influence of alloy composition on creep strength and other selected properties, and (2) based on the results from this model, examine promising alloy composition areas, for further development and for meeting the property combination targets, with the view to designing an optimized alloy composition. The target properties identified by ILZRO for an improved creep resistant zinc die-casting alloy were identified as follows: (1) temperature capability of 1470 C; (2) creep stress of 31 MPa (4500 psi); (3) exposure time of 1000 hours; and (4) maximum creep elongation under these conditions of 1%. The project was broadly divided into three tasks: (1) Task 1--General and Modeling, covering Experimental design of a first batch of alloys, alloy preparation and characterization. (2) Task 2--Refinement and Optimization, covering Experimental design of a second batch of alloys. (3) Task 3--Creep Testing and Technology transfer, covering the finalization of testing and the transfer of technology to the Zinc industry should have at least one improved alloy result from this work.

  5. Weldability of High Alloys

    SciTech Connect

    Maroef, I

    2003-01-22

    The purpose of this study was to investigate the effect of silicon and iron on the weldability of HAYNES HR-160{reg_sign} alloy. HR-I60 alloy is a solid solution strengthened Ni-Co-Cr-Si alloy. The alloy is designed to resist corrosion in sulfidizing and other aggressive high temperature environments. Silicon is added ({approx}2.75%) to promote the formation of a protective oxide scale in environments with low oxygen activity. HR-160 alloy has found applications in waste incinerators, calciners, pulp and paper recovery boilers, coal gasification systems, and fluidized bed combustion systems. HR-160 alloy has been successfully used in a wide range of welded applications. However, the alloy can be susceptible to solidification cracking under conditions of severe restraint. A previous study by DuPont, et al. [1] showed that silicon promoted solidification cracking in the commercial alloy. In earlier work conducted at Haynes, and also from published work by DuPont et al., it was recognized that silicon segregates to the terminal liquid, creating low melting point liquid films on solidification grain boundaries. Solidification cracking has been encountered when using the alloy as a weld overlay on steel, and when joining HR-160 plate in a thickness greater than19 millimeters (0.75 inches) with matching filler metal. The effect of silicon on the weldability of HR-160 alloy has been well documented, but the effect of iron is not well understood. Prior experience at Haynes has indicated that iron may be detrimental to the solidification cracking resistance of the alloy. Iron does not segregate to the terminal solidification product in nickel-base alloys, as does silicon [2], but iron may have an indirect or interactive influence on weldability. A set of alloys covering a range of silicon and iron contents was prepared and characterized to better understand the welding metallurgy of HR-160 alloy.

  6. Nanocrystalline films of soft magnetic iron-based alloys

    NASA Astrophysics Data System (ADS)

    Sheftel', E. N.; Bannykh, O. A.

    2006-10-01

    The physicochemical and structural aspects of designing soft magnetic alloys Fe- MX (where M is a Group III V metal of the periodic table and X = C, N, O) in the form of nanocrystalline films precipitation-hardened by refractory interstitial phases are discussed and developed. The results of studying the structure and magnetic properties of Fe78Zr10N12 films are reported. The films in the amorphous state are produced by reactive magnetron sputtering. Upon annealing at 300 600°C, the amorphous films crystallize to form mainly a bcc α-Fe-based phase and the fcc ZrN phase. The grain size of the bcc phase is shown to increase from ˜3 nm to ˜30 nm as the annealing temperature increases; the grain size of the fcc phase does not exceed 2 3 nm. Films annealed at 400°C exhibit a record level of magnetic properties: H c = 5 6 A/m and B s = 1.7 1.8 T. The experimental results obtained confirm the validity of our scientific approach.

  7. Alloying of aluminum-beryllium alloys

    NASA Astrophysics Data System (ADS)

    Molchanova, L. V.; Ilyushin, V. N.

    2013-01-01

    The existing phase diagrams of Al-Be- X alloys, where X is an alloying element, are analyzed. Element X is noted to poorly dissolve in both aluminum and beryllium. It is shown that the absence of intermetallic compounds in the Al-Be system affects the phase equilibria in an Al-Be- X system. Possible phase equilibria involving phases based on aluminum, beryllium, and intermetallic compounds are proposed, and the types of strengthening of Al-Be alloys by an addition of a third element are classified.

  8. Catalyst Alloys Processing

    NASA Astrophysics Data System (ADS)

    Tan, Xincai

    2014-10-01

    Catalysts are one of the key materials used for diamond formation at high pressures. Several such catalyst products have been developed and applied in China and around the world. The catalyst alloy most widely used in China is Ni70Mn25Co5 developed at Changsha Research Institute of Mining and Metallurgy. In this article, detailed techniques for manufacturing such a typical catalyst alloy will be reviewed. The characteristics of the alloy will be described. Detailed processing of the alloy will be presented, including remelting and casting, hot rolling, annealing, surface treatment, cold rolling, blanking, finishing, packaging, and waste treatment. An example use of the catalyst alloy will also be given. Industrial experience shows that for the catalyst alloy products, a vacuum induction remelt furnace can be used for remelting, a metal mold can be used for casting, hot and cold rolling can be used for forming, and acid pickling can be used for metal surface cleaning.

  9. Amorphous metal alloy

    DOEpatents

    Wang, R.; Merz, M.D.

    1980-04-09

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  10. Low activation ferritic alloys

    DOEpatents

    Gelles, David S.; Ghoniem, Nasr M.; Powell, Roger W.

    1986-01-01

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  11. Low activation ferritic alloys

    DOEpatents

    Gelles, D.S.; Ghoniem, N.M.; Powell, R.W.

    1985-02-07

    Low activation ferritic alloys, specifically bainitic and martensitic stainless steels, are described for use in the production of structural components for nuclear fusion reactors. They are designed specifically to achieve low activation characteristics suitable for efficient waste disposal. The alloys essentially exclude molybdenum, nickel, nitrogen and niobium. Strength is achieved by substituting vanadium, tungsten, and/or tantalum in place of the usual molybdenum content in such alloys.

  12. PLUTONIUM-ZIRCONIUM ALLOYS

    DOEpatents

    Schonfeld, F.W.; Waber, J.T.

    1960-08-30

    A series of nuclear reactor fuel alloys consisting of from about 5 to about 50 at.% zirconium (or higher zirconium alloys such as Zircaloy), balance plutonium, and having the structural composition of a plutonium are described. Zirconium is a satisfactory diluent because it alloys readily with plutonium and has desirable nuclear properties. Additional advantages are corrosion resistance, excellent fabrication propenties, an isotropie structure, and initial softness.

  13. NICKEL-BASE ALLOY

    DOEpatents

    Inouye, H.; Manly, W.D.; Roche, T.K.

    1960-01-19

    A nickel-base alloy was developed which is particularly useful for the containment of molten fluoride salts in reactors. The alloy is resistant to both salt corrosion and oxidation and may be used at temperatures as high as 1800 deg F. Basically, the alloy consists of 15 to 22 wt.% molybdenum, a small amount of carbon, and 6 to 8 wt.% chromium, the balance being nickel. Up to 4 wt.% of tungsten, tantalum, vanadium, or niobium may be added to strengthen the alloy.

  14. Copper-tantalum alloy

    DOEpatents

    Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

    1986-07-15

    A tantalum-copper alloy can be made by preparing a consumable electrode consisting of an elongated copper billet containing at least two spaced apart tantalum rods extending longitudinally the length of the billet. The electrode is placed in a dc arc furnace and melted under conditions which co-melt the copper and tantalum to form the alloy.

  15. Cesium iodide alloys

    DOEpatents

    Kim, H.E.; Moorhead, A.J.

    1992-12-15

    A transparent, strong CsI alloy is described having additions of monovalent iodides. Although the preferred iodide is AgI, RbI and CuI additions also contribute to an improved polycrystalline CsI alloy with outstanding multispectral infrared transmittance properties. 6 figs.

  16. Ductile transplutonium metal alloys

    DOEpatents

    Conner, William V.

    1983-01-01

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as sources of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  17. Nickel base coating alloy

    NASA Technical Reports Server (NTRS)

    Barrett, C. A. (Inventor); Lowell, C. E. (Inventor)

    1986-01-01

    Zirconium is added to a Ni-30 Al (beta) intermetallic alloy in the range of 0.05 w/o to 0.25 w/o. This addition is made during melting or by using metal powders. The addition of zirconium improves the cyclic oxidation resistance of the alloys at temperatures above 1100 C.

  18. PLUTONIUM-CERIUM ALLOY

    DOEpatents

    Coffinberry, A.S.

    1959-01-01

    An alloy is presented for use as a reactor fuel. The binary alloy consists essentially of from about 5 to 90 atomic per cent cerium and the balance being plutonium. A complete phase diagram for the cerium--plutonium system is given.

  19. Neutron Absorbing Alloys

    DOEpatents

    Mizia, Ronald E.; Shaber, Eric L.; DuPont, John N.; Robino, Charles V.; Williams, David B.

    2004-05-04

    The present invention is drawn to new classes of advanced neutron absorbing structural materials for use in spent nuclear fuel applications requiring structural strength, weldability, and long term corrosion resistance. Particularly, an austenitic stainless steel alloy containing gadolinium and less than 5% of a ferrite content is disclosed. Additionally, a nickel-based alloy containing gadolinium and greater than 50% nickel is also disclosed.

  20. Aluminum battery alloys

    DOEpatents

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  1. Aluminum battery alloys

    DOEpatents

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  2. Ductile transplutonium metal alloys

    DOEpatents

    Conner, W.V.

    1981-10-09

    Alloys of Ce with transplutonium metals such as Am, Cm, Bk and Cf have properties making them highly suitable as souces of the transplutonium element, e.g., for use in radiation detector technology or as radiation sources. The alloys are ductile, homogeneous, easy to prepare and have a fairly high density.

  3. Ultrahigh temperature intermetallic alloys

    SciTech Connect

    Brady, M.P.; Zhu, J.H.; Liu, C.T.; Tortorelli, P.F.; Wright, J.L.; Carmichael, C.A.; Walker, L.R.

    1997-12-01

    A new family of Cr-Cr{sub 2}X based alloys with fabricability, mechanical properties, and oxidation resistance superior to previously developed Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys has been identified. The new alloys can be arc-melted/cast without cracking, and exhibit excellent room temperature and high-temperature tensile strengths. Preliminary evaluation of oxidation behavior at 1100 C in air indicates that the new Cr-Cr{sub 2}X based alloys form an adherent chromia-based scale. Under similar conditions, Cr-Cr{sub 2}Nb and Cr-Cr{sub 2}Zr based alloys suffer from extensive scale spallation.

  4. In situ measurement of CuPt alloy ordering using strain anisotropy

    SciTech Connect

    France, Ryan M.; McMahon, William E.; Kang, Joongoo; Steiner, Myles A.; Geisz, John F.

    2014-02-07

    The optical and electrical properties of many III-V alloys change with the degree of CuPt atomic ordering, which is very sensitive to growth conditions. The bulk ordered alloy is elongated along the normal to the ordered planes, and is asymmetrically strained when coherent to a cubic substrate. Here, we demonstrate in situ measurement of the anisotropic strain due to ordering using two-dimensional wafer curvature. The measurement is sensitive to bulk anisotropies, and so is complementary to other in situ measurements that are sensitive to surface anisotropies. Using ab initio calculations, we determine a maximum strain anisotropy of 0.27% between [110] and [1{sup ¯}10] when perfectly ordered single-variant GaInP{sub 2} is coherent to a (001) cubic substrate. We relate the in situ measurement of strain anisotropy on various GaInP{sub 2} samples to ex situ measurements of the order parameter to validate the measurement and confirm the capability to predict material properties. The measurement monitors change in ordering during growth, useful for quickly determining the growth condition dependence of ordering or monitoring order-disorder transitions. More generally, this measurement technique could, in principle, be used to monitor phase changes in any epitaxial system for which the strain anisotropy of the two phases differs.

  5. THORIUM-SILICON-BERYLLIUM ALLOYS

    DOEpatents

    Foote, F.G.

    1959-02-10

    Th, Si, anol Bt alloys where Be and Si are each present in anmounts between 0.1 and 3.5% by weight and the total weight per cent of the minor alloying elements is between 1.5 and 4.5% are discussed. These ternary alloys show increased hardness and greater resistant to aqueous corrosion than is found in pure Th, Th-Si alloys, or Th-Be alloys.

  6. Magnesium silicide intermetallic alloys

    NASA Astrophysics Data System (ADS)

    Li, Gh.; Gill, H. S.; Varin, R. A.

    1993-11-01

    Methods of induction melting an ultra-low-density magnesium silicide (Mg2Si) intermetallic and its alloys and the resulting microstructure and microhardness were studied. The highest quality ingots of Mg2Si alloys were obtained by triple melting in a graphite crucible coated with boron nitride to eliminate reactivity, under overpressure of high-purity argon (1.3 X 105 Pa), at a temperature close to but not exceeding 1105 °C ± 5 °C to avoid excessive evaporation of Mg. After establishing the proper induction-melting conditions, the Mg-Si binary alloys and several Mg2Si alloys macroalloyed with 1 at. pct of Al, Ni, Co, Cu, Ag, Zn, Mn, Cr, and Fe were induction melted and, after solidification, investigated by optical microscopy and quantitative X-ray energy dispersive spectroscopy (EDS). Both the Mg-rich and Si-rich eutectic in the binary alloys exhibited a small but systematic increase in the Si content as the overall composition of the binary alloy moved closer toward the Mg2Si line compound. The Vickers microhardness (VHN) of the as-solidified Mg-rich and Si-rich eutectics in the Mg-Si binary alloys decreased with increasing Mg (decreasing Si) content in the eutectic. This behavior persisted even after annealing for 75 hours at 0.89 pct of the respective eutectic temperature. The Mg-rich eutectic in the Mg2Si + Al, Ni, Co, Cu, Ag, and Zn alloys contained sections exhibiting a different optical contrast and chemical composition than the rest of the eutectic. Some particles dispersed in the Mg2Si matrix were found in the Mg2Si + Cr, Mn, and Fe alloys. The EDS results are presented and discussed and compared with the VHN data.

  7. TUNGSTEN BASE ALLOYS

    DOEpatents

    Schell, D.H.; Sheinberg, H.

    1959-12-15

    A high-density quaternary tungsten-base alloy having high mechanical strength and good machinability composed of about 2 wt.% Ni, 3 wt.% Cu, 5 wt.% Pb, and 90wt.% W is described. This alloy can be formed by the powder metallurgy technique of hot pressing in a graphite die without causing a reaction between charge and the die and without formation of a carbide case on the final compact, thereby enabling re-use of the graphite die. The alloy is formable at hot- pressing temperatures of from about 1200 to about 1350 deg C. In addition, there is little component shrinkage, thereby eliminating the necessity of subsequent extensive surface machining.

  8. Electroplating on titanium alloy

    NASA Technical Reports Server (NTRS)

    Lowery, J. R.

    1971-01-01

    Activation process forms adherent electrodeposits of copper, nickel, and chromium on titanium alloy. Good adhesion of electroplated deposits is obtained by using acetic-hydrofluoric acid anodic activation process.

  9. Alloy Selection System

    SciTech Connect

    2001-02-01

    Software will Predict Corrosion Rates to Improve Productivity in the Chemical Industry. Many aspects of equipment design and operation are influenced by the choice of the alloys used to fabricate process equipment.

  10. PLUTONIUM-URANIUM ALLOY

    DOEpatents

    Coffinberry, A.S.; Schonfeld, F.W.

    1959-09-01

    Pu-U-Fe and Pu-U-Co alloys suitable for use as fuel elements tn fast breeder reactors are described. The advantages of these alloys are ease of fabrication without microcracks, good corrosion restatance, and good resistance to radiation damage. These advantages are secured by limitation of the zeta phase of plutonium in favor of a tetragonal crystal structure of the U/sub 6/Mn type.

  11. Disk Alloy Development

    NASA Technical Reports Server (NTRS)

    Gabb, Tim; Gayda, John; Telesman, Jack

    2001-01-01

    The advanced powder metallurgy disk alloy ME3 was designed using statistical screening and optimization of composition and processing variables in the NASA HSR/EPM disk program to have extended durability at 1150 to 1250 "Fin large disks. Scaled-up disks of this alloy were produced at the conclusion of this program to demonstrate these properties in realistic disk shapes. The objective of the UEET disk program was to assess the mechanical properties of these ME3 disks as functions of temperature, in order to estimate the maximum temperature capabilities of this advanced alloy. Scaled-up disks processed in the HSR/EPM Compressor / Turbine Disk program were sectioned, machined into specimens, and tested in tensile, creep, fatigue, and fatigue crack growth tests by NASA Glenn Research Center, in cooperation with General Electric Engine Company and Pratt & Whitney Aircraft Engines. Additional sub-scale disks and blanks were processed and tested to explore the effects of several processing variations on mechanical properties. Scaled-up disks of an advanced regional disk alloy, Alloy 10, were used to evaluate dual microstructure heat treatments. This allowed demonstration of an improved balance of properties in disks with higher strength and fatigue resistance in the bores and higher creep and dwell fatigue crack growth resistance in the rims. Results indicate the baseline ME3 alloy and process has 1300 to 1350 O F temperature capabilities, dependent on detailed disk and engine design property requirements. Chemistry and process enhancements show promise for further increasing temperature capabilities.

  12. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOEpatents

    Moon, Ronald L.

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  13. Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOEpatents

    Moon, Ronald L.

    1981-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

  14. The optical spectrum of ternary alloy BBi1-xAsx

    NASA Astrophysics Data System (ADS)

    Yalcin, Battal G.; Aslan, M.; Ozcan, M. H.; Rahnamaye Aliabad, H. A.

    2016-06-01

    Among the III-V semiconductors, boron BBi and BAs as well as their alloys have attracted both scientific and technological interest in recent years. We present a calculation of the structural, electronic and optical properties of ternary alloy BBi1-xAsx by means of the WIEN2k software package. The exchange-correlation potential is treated by the generalized gradient approximation (GGA) within the schema of Wu and Cohen. Also, we have used the modified Becke-Johnson (mBJ) formalism to improve the band gap results. All the calculations have been performed after geometry optimization. In this study, we have investigated structural properties such as the lattice constant (a0), bulk modulus (B0) and its pressure derivative (B‧), and calculated the electronic band structures of the studied materials. Accurate calculation of linear optical properties, such as real (ɛ 1) and imaginary (ɛ 2) dielectric functions, reflectivity (R), electron energy loss spectrum, absorption coefficient (α), refractive index (n) and sum rule (Neff) are investigated. Our obtained results for studied binary compounds, BBi and BAs, fairly coincide with other theoretical calculations and experimental measurements. According to the best of our knowledge, no experimental or theoretical data are presently available for the studied ternary alloy BBi1-xAsx (0 < x < 1). The role of electronic band structure calculation with regards to the linear optical properties of BBi1-xAsx is discussed. The effect of the spin-orbit interaction (SOI) is also investigated and found to be quite small.

  15. Correlation between diffusion barriers and alloying energy in binary alloys.

    PubMed

    Vej-Hansen, Ulrik Grønbjerg; Rossmeisl, Jan; Stephens, Ifan E L; Schiøtz, Jakob

    2016-01-28

    In this paper, we explore the notion that a negative alloying energy may act as a descriptor for long term stability of Pt-alloys as cathode catalysts in low temperature fuel cells. Using density functional theory calculations, we show that there is a correlation between the alloying energy of an alloy, and the diffusion barriers of the minority component. Alloys with a negative alloying energy may show improved long term stability, despite the fact that there is typically a greater thermodynamic driving force towards dissolution of the solute metal over alloying. In addition to Pt, we find that this trend also appears to hold for alloys based on Al and Pd. PMID:26750475

  16. (NH{sub 4})[V{sub 1-x}{sup III}V{sub x}{sup IV}(AsO{sub 4})F{sub 1-x}O{sub x}]: A new mixed valence vanadium(III,IV) fluoro-arsenate with ferromagnetic interactions and electronic conductivity

    SciTech Connect

    Berrocal, Teresa

    2009-01-15

    A new mixed valence vanadium(III,IV) fluoro-arsenate compound, with formula (NH{sub 4})[V{sub 1-x}{sup III}V{sub x}{sup IV}(AsO{sub 4})F{sub 1-x}O{sub x}] and KTP structure-type, has been synthesized by mild hydrothermal techniques. The crystal structure has been solved from single crystal X-ray diffraction data in the Pna2{sub 1} orthorhombic space group. The unit-cell parameters are a=13.196(2) A, b=6.628(1) A and c=10.7379(7) A with Z=8. The final R factors were R1=0.0438 and wR2=0.0943 [all data]. The crystal structure consists of a three-dimensional framework formed by (V{sup III,IV}O{sub 4}F{sub 2}) octahedra and (AsO{sub 4}){sup 3-} tetrahedra arsenate oxoanions. The vanadium(III,IV) cations, from the (V{sup III,IV}O{sub 4}F{sub 2}) octahedra, are linked through the fluorine atoms giving rise to zigzag chains. The ammonium cations are located in the cavities of the structure compensating the anionic charge of the [V{sub 1-x}{sup III}V{sub x}{sup IV}(AsO{sub 4})F{sub 1-x}O{sub x}]{sup -} inorganic skeleton. The thermal stability limit of the phase is 345 deg. C, around to this temperature the ammonium cation and fluoride anion are lost. The IR spectrum shows the characteristic bands of the (NH{sub 4}){sup +} and (AsO{sub 4}){sup 3-} ions. Magnetic measurements indicate the existence of weak ferromagnetic interactions. Electronic conductivity, via a hopping mechanism, occurs with an activation energy of 0.66 eV. - Graphical abstract: Polyhedral view of the crystal structure of (NH{sub 4})[V{sup III}{sub 1-x}V{sup IV}{sub x}(AsO{sub 4})F{sub 1-x}O{sub x}].

  17. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  18. De-alloyed platinum nanoparticles

    DOEpatents

    Strasser, Peter; Koh, Shirlaine; Mani, Prasanna; Ratndeep, Srivastava

    2011-08-09

    A method of producing de-alloyed nanoparticles. In an embodiment, the method comprises admixing metal precursors, freeze-drying, annealing, and de-alloying the nanoparticles in situ. Further, in an embodiment de-alloyed nanoparticle formed by the method, wherein the nanoparticle further comprises a core-shell arrangement. The nanoparticle is suitable for electrocatalytic processes and devices.

  19. PLUTONIUM-URANIUM-TITANIUM ALLOYS

    DOEpatents

    Coffinberry, A.S.

    1959-07-28

    A plutonium-uranium alloy suitable for use as the fuel element in a fast breeder reactor is described. The alloy contains from 15 to 60 at.% titanium with the remainder uranium and plutonium in a specific ratio, thereby limiting the undesirable zeta phase and rendering the alloy relatively resistant to corrosion and giving it the essential characteristic of good mechanical workability.

  20. Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

    SciTech Connect

    Roucka, Radek Clark, Andrew; Landini, Barbara

    2015-09-28

    Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction, single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.

  1. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  2. Stabilization of noncondensed (As(III)S3)(3-) anions by coordinating to [Mn(II)(phen)](2+) complex cations: a mixed-valent thioarsenate (III, V) {[Mn(phen)]3(As(V)S4)(As(III)S3)}(n)·nH2O showing the coexistence of antiferromagnetic order, photoluminescence, and nonlinear optical properties.

    PubMed

    Liu, Guang-Ning; Jiang, Xiao-Ming; Wu, Mei-Feng; Wang, Guan-E; Guo, Guo-Cong; Huang, Jin-Shun

    2011-06-20

    A novel one-dimensional (1-D) mixed-valent thioarsenate (III, V), {[Mn(phen)](3)(As(V)S(4))(As(III)S(3))}(n)·nH(2)O (1), with a noncentrosymmetric (NCS) polar packing arrangement has been obtained under solvothermal conditions. The noncondensed (As(III)S(3))(3-) anion in 1 is stabilized by coordinating to [Mn(II)(phen)](2+) complex cations and exhibits an unprecedented μ(3)-1,2κS:2,3κS':3κS'' linkage mode. Compound 1 represents the first example of the stabilization of noncondensed (MQ(3))(3-) (M = As, Sb; Q = S, Se) species only in the coordination of TM(II) complex cations (TM = transition-metal) and the first observation of the coexistence of the (As(V)S(4))(3-) tetrahedron and the noncondensed (As(III)S(3))(3-) pyramid in a single compound. Of particular interest, compound 1 is also an antiferromagnet with T(N) = 31 K, and exhibits photoluminescence (PL) with a maximum emission at about 438 nm and a second harmonic generation (SHG) response.

  3. Surface modification of high temperature iron alloys

    DOEpatents

    Park, Jong-Hee

    1995-01-01

    A method and article of manufacture of a coated iron based alloy. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700.degree. C.-1200.degree. C. to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy.

  4. Surface modification of high temperature iron alloys

    DOEpatents

    Park, J.H.

    1995-06-06

    A method and article of manufacture of a coated iron based alloy are disclosed. The method includes providing an iron based alloy substrate, depositing a silicon containing layer on the alloy surface while maintaining the alloy at a temperature of about 700--1200 C to diffuse silicon into the alloy surface and exposing the alloy surface to an ammonia atmosphere to form a silicon/oxygen/nitrogen containing protective layer on the iron based alloy. 13 figs.

  5. Work function of binary alloys

    NASA Astrophysics Data System (ADS)

    Ishii, Ryusuke; Matsumura, Katsunori; Sakai, Akira; Sakata, Toyo

    2001-01-01

    By utilizing the field emission method, we have studied the composition dependence of work function in NiCu and PtRh alloys. In PtRh alloys, we find that the work function falls below the linear interpolation, in agreement with the experimental results on AgAu alloys [Fain and McDavid, Phys. Rev. B 9 (1974) 5099]. On the other hand, the work function of NiCu alloys is found to show little systematic deviation from the linear interpolation. The observed negative deviation in PtRh alloys is not compatible with a simple theoretical prediction based on the electronic density of states.

  6. Long-Lived Hot Carriers in III-V Nanowires.

    PubMed

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs.

  7. Vertical III-V nanowire device integration on Si(100).

    PubMed

    Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

    2014-01-01

    We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

  8. Long-Lived Hot Carriers in III-V Nanowires.

    PubMed

    Tedeschi, D; De Luca, M; Fonseka, H A; Gao, Q; Mura, F; Tan, H H; Rubini, S; Martelli, F; Jagadish, C; Capizzi, M; Polimeni, A

    2016-05-11

    Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-based devices. In particular, the rate at which charge carriers cool down after an external excitation is crucial for the efficiency of solar cells, lasers, and high-speed transistors. Here, we investigate the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs. A quantitative analysis of the PL spectra recorded up to 310 K shows that carriers can thermalize at a temperature much higher than that of the lattice. We find that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattice temperature and depends inversely on the NW diameter. ΔT is instead independent of other NW characteristics, such as crystal structure (wurtzite vs zincblende), chemical composition (InP vs GaAs), shape (tapered vs columnar NWs), and growth method (vapor-liquid-solid vs selective-area growth). Remarkably, carrier temperatures as high as 500 K are reached at the lattice temperature of 310 K in NWs with ∼70 nm diameter. While a population of nonequilibrium carriers, usually referred to as "hot carriers", is routinely generated by high-power laser pulses and detected by ultrafast spectroscopy, it is quite remarkable that it can be observed in cw PL measurements, when a steady-state population of carriers is established. Time-resolved PL measurements show that even in the thinnest NWs carriers have enough time (∼1 ns) after photoexcitation to interact with phonons and thus to release their excess energy. Nevertheless, the inability of carriers to reach a full thermal equilibrium with the lattice points to inhibited phonon emission primarily caused by the large surface-to-volume ratio of small diameter NWs. PMID:27104870

  9. High temperature surface degradation of III-V nitrides

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; MacKenzie, J.D.; Lambers, E.S.; Zolper, J.C.

    1996-05-01

    The surface stoichiometry, surface morphology and electrical conductivity of AlN, GaN, InN, InGaN and InAlN was examined at rapid thermal annealing temperatures up to 1,150 C. The sheet resistance of the AlN dropped steadily with annealing, but the surface showed signs of roughening only above 1,000 C. Auger Electronic Spectroscopy (AES) analysis showed little change in the surface stoichiometry even at 1,150 C. GaN root mean square (RMS) surface roughness showed an overall improvement with annealing, but the surface became pitted at 1,000 C, at which point the sheet resistance also dropped by several orders of magnitude, and AES confirmed a loss of N from the surface. The InN surface had roughened considerably even at 650 C, and scanning electron microscopy (SEM) showed significant degradation. In contrast to the binary nitrides the sheet resistance of InAlN was found to increase by {approximately} 10{sup 2} from the as grown value after annealing at 800 C and then remain constant up to 1,000 C, while that of InGaN increased rapidly above 700 C. The RMS roughness increased above 800 C and 700 C respectively for InAlN and InGaN samples. In droplets began to form on the surface at 900 C for InAlN and at 800 C for InGaN, and then evaporate at 1,000 C leaving pits. AES analysis showed a decrease in the N concentration in the top 500 {angstrom} of the sample for annealing {ge} 800 C in both materials.

  10. Ion implantation and annealing studies in III-V nitrides

    SciTech Connect

    Zolper, J.C.; Pearton, S.J.; Williams, J.S.; Tan, H.H.; Karlicek, R.J. Jr.; Stall, R.A.

    1996-12-31

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n{sup +}-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10{sup 16} cm{sup {minus}2} 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.

  11. [Update of breast cancer in Primary Care (III/V)].

    PubMed

    Álvarez Hernández, C; Vich Pérez, P; Brusint, B; Cuadrado Rouco, C; Díaz García, N; Robles Díaz, L

    2014-01-01

    Breast cancer is a prevalent disease with implications in all aspects of patientś life, therefore, family doctors must know this pathology in depth, in order to optimize the health care provided to these patients with the best available resources. This series of five articles on breast cancer is based on a review of the scientific literature of the last ten years. This third article will review the clinical context and the staging and prognostic factors of the disease. This summary report aims to provide a global, current and practical review about this problem, providing answers to family doctors and helping them to be by the patients for their benefit throughout their illness.

  12. Chemical beam epitaxy growth of III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Mohummed Noori, Farah T.

    2013-12-01

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425-454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5-1 μm and of an array 40nm diameter with length is in the range 0.3-0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  13. Luminescence of thulium in III-V semiconductors and silicon

    NASA Astrophysics Data System (ADS)

    Pomrenke, Gernot S.; Silkowski, E.; Colon, J. E.; Topp, D. J.; Yeo, Y. K.; Hengehold, R. L.

    1992-02-01

    Thulium (Tm) emissions were investigated in 390 keV, Tm-implanted AlGaAs, GaAs, InP, and Si using photoluminescence spectroscopy. The emissions in the different semiconductors were observed in the 1.20 to 1.35-μm region and are attributed to transitions between the crystal-field-split spin-orbit levels 3H5- 3H6 of Tm3+ (4f12). The main emission in GaAs is located at 1.233 μm and shows doublet structure with a width for each component of better than 0.15 meV at 6 K. Anneal temperature dependent studies identify multiple sites as the source of the Tm3+ emissions. The optimum anneal temperatures of Tm-implanted GaAs and AlGaAs are between 725 and 750 °C, for 10- or 15-min anneals, whereas InP:Tm appears to have the strongest emissions in the 575 to 625 °C temperature range. The intracenter Tm3+ emissions for Si:Tm were observed at 850 °C. Sample temperature dependent studies of Tm3+ emissions show that the sharp emissions can be seen to as high a temperature as 240 K for specific samples. Luminescence intensity studies as a function of excitation laser power in GaAs:Tm and AlGaAs:Tm exhibit a sublinear relationship. Lifetime measurements at 10 K of the main 1.233-μm line found two decay components with times of 0.5±0.3 μs and 2.6±0.3 μs. Selective excitation studies indicate that free carriers and/or excitons are involved in the excitation of the Tm centers.

  14. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  15. The Performance of Advanced III-V Solar Cells

    NASA Technical Reports Server (NTRS)

    Mueller, Robert L.; Gaddy, Edward; Day, John H. (Technical Monitor)

    2002-01-01

    Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/sq cm. Triple junction cells also achieve up to 27.5% at -120 C and 5 mw/sq cm, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.

  16. Surface Localization of Buried III-V Semiconductor Nanostructures.

    PubMed

    Alonso-González, P; González, L; Fuster, D; Martín-Sánchez, J; González, Yolanda

    2009-01-01

    In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (d = 25 nm).

  17. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    PubMed

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-01

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform. PMID:26561728

  18. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    SciTech Connect

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  19. III-V semiconductor quantum well and superlattice detectors

    NASA Astrophysics Data System (ADS)

    Walther, Martin; Fuchs, Frank; Schneider, Harald; Fleissner, Joachim; Schmitz, J.; Pletschen, Wilfried; Braunstein, Juergen; Ziegler, Johann; Cabanski, Wolfgang A.; Koidl, Peter; Weimann, Guenter

    1998-10-01

    The paper reviews the development of IR detectors for the 8 - 12 micrometer wavelength range based on GaAs/AlGaAs quantum well structures and InAs/(GaIn)Sb short-period superlattices (SPSLs) at the Fraunhofer-Institute IAF. Photoconductive GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are used for the fabrication of starring IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared (LWIR) camera, devleoped in cooperation with AEG Infrarot-Module (AIM), consists of a two-dimensional focal plane array (FPA) with 256 X 256 detector elements, flip- chip bonded to a read-out integrated circuit (ROIC). The technology for the fabrication of FPAs, electrical and optical properties of single detector elements in the two-dimensional arrangement and the properties of the LWIR camera system are reported. A noise equivalent temperature difference (NETD) below 10 mK has been measured at an operation temperature of T equals 65 K with an integration time of 20 ms. More than 99.8% of all pixels are working and no cluster defects are observed. InAs/(GaIn)Sb SPSLs with a broken gap type-II band alignment are well suited for the fabrication of IR detectors covering the 3 - 12 micrometer spectral range. Due to the lattice mismatch of the InAs/(GaIn)Sb SPSL with respect to GaSb, tight control of thickness and composition of the layers and a controlled formation of the chemical bonds across the interface in the SPSLs are used for strain compensation. Photodiodes with a cut-off wavelength (lambda) c equals 8 micrometer and a current responsivity R(lambda ) equals 2 A/W exhibit a dynamic impedance of R0A equals 1k(Omega) cm2 at T equals 77 K. This leads to a Johnson- noise limited detectivity in excess of D* equals 1 X 1012 cm(Hz)1/2/W for these type of detectors.

  20. Carbon films grown from plasma on III-V semiconductors

    NASA Technical Reports Server (NTRS)

    Pouch, J. J.; Warner, J. D.; Liu, D. C.

    1985-01-01

    Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.

  1. Alloyed coatings for dispersion strengthened alloys

    NASA Technical Reports Server (NTRS)

    Wermuth, F. R.; Stetson, A. R.

    1971-01-01

    Processing techniques were developed for applying several diffusion barriers to TD-Ni and TD-NiCr. Barrier coated specimens of both substrates were clad with Ni-Cr-Al and Fe-Cr-Al alloys and diffusion annealed in argon. Measurement of the aluminum distribution after annealing showed that, of the readily applicable diffusion barriers, a slurry applied tungsten barrier most effectively inhibited the diffusion of aluminum from the Ni-Cr-Al clad into the TD-alloy substrates. No barrier effectively limited interdiffusion of the Fe-Cr-Al clad with the substrates. A duplex process was then developed for applying Ni-Cr-Al coating compositions to the tungsten barrier coated substrates. A Ni-(16 to 32)Cr-3Si modifier was applied by slurry spraying and firing in vacuum, and was then aluminized by a fusion slurry process. Cyclic oxidation tests at 2300 F resulted in early coating failure due to inadequate edge coverage and areas of coating porosity. EMP analysis showed that oxidation had consumed 70 to 80 percent of the aluminum in the coating in less than 50 hours.

  2. Shape Memory Alloy Actuator

    NASA Technical Reports Server (NTRS)

    Baumbick, Robert J. (Inventor)

    2000-01-01

    The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

  3. Quinary metallic glass alloys

    DOEpatents

    Lin, X.; Johnson, W.L.

    1998-04-07

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10{sup 3}K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf){sub a}(Al,Zn){sub b}(Ti,Nb){sub c}(Cu{sub x}Fe{sub y}(Ni,Co){sub z}){sub d} wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d{hor_ellipsis}y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  4. Quinary metallic glass alloys

    DOEpatents

    Lin, Xianghong; Johnson, William L.

    1998-01-01

    At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf).sub.a (Al,Zn).sub.b (Ti,Nb).sub.c (Cu.sub.x Fe.sub.y (Ni,Co).sub.z).sub.d wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d.multidot.y is less than 10 atomic percent, and x/z ranges from 0.5 to 2.

  5. Advanced ordered intermetallic alloy deployment

    SciTech Connect

    Liu, C.T.; Maziasz, P.J.; Easton, D.S.

    1997-04-01

    The need for high-strength, high-temperature, and light-weight materials for structural applications has generated a great deal of interest in ordered intermetallic alloys, particularly in {gamma}-based titanium aluminides {gamma}-based TiAl alloys offer an attractive mix of low density ({approximately}4g/cm{sup 3}), good creep resistance, and high-temperature strength and oxidation resistance. For rotating or high-speed components. TiAl also has a high damping coefficient which minimizes vibrations and noise. These alloys generally contain two phases. {alpha}{sub 2} (DO{sub 19} structure) and {gamma} (L 1{sub 0}), at temperatures below 1120{degrees}C, the euticoid temperature. The mechanical properties of TiAl-based alloys are sensitive to both alloy compositions and microstructure. Depending on heat-treatment and thermomechanical processing, microstructures with near equiaxed {gamma}, a duplex structure (a mix of the {gamma} and {alpha}{sub 2} phases) can be developed in TiAl alloys containing 45 to 50 at. % Al. The major concern for structural use of TiAl alloys is their low ductility and poor fracture resistance at ambient temperatures. The purpose of this project is to improve the fracture toughness of TiAl-based alloys by controlling alloy composition, microstructure and thermomechanical treatment. This work is expected to lead to the development of TiAl alloys with significantly improved fracture toughness and tensile ductility for structural use.

  6. Filler metal alloy for welding cast nickel aluminide alloys

    DOEpatents

    Santella, Michael L.; Sikka, Vinod K.

    1998-01-01

    A filler metal alloy used as a filler for welding east nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and east in copper chill molds.

  7. Filler metal alloy for welding cast nickel aluminide alloys

    DOEpatents

    Santella, M.L.; Sikka, V.K.

    1998-03-10

    A filler metal alloy used as a filler for welding cast nickel aluminide alloys contains from about 15 to about 17 wt. % chromium, from about 4 to about 5 wt. % aluminum, equal to or less than about 1.5 wt. % molybdenum, from about 1 to about 4.5 wt. % zirconium, equal to or less than about 0.01 wt. % yttrium, equal to or less than about 0.01 wt. % boron and the balance nickel. The filler metal alloy is made by melting and casting techniques such as are melting the components of the filler metal alloy and cast in copper chill molds. 3 figs.

  8. Alternate alloying for environmental resistance

    SciTech Connect

    Smolik, G.R.; Banerji, S.K.

    1986-01-01

    The 35 papers contained in this collection detail efforts being made toward achieving environmental resistance of alloys and conserved usage of strategic and critical materials. An in-depth look is taken at the roles played by various alloying elements in providing desired microstructures, properties, and influences upon environmental attack. Also presented are applications and performances of alternate alloys in aqueous and high temperature gaseous and molten salt environments. The book is broken down into five key sections covering: 1) philosophies and status of programs designing alloys for resistance to various environmental and microstructural stability of some of these alloys systems, 2) applications in hot corrosion and sulfidizing environments, 3) applications in oxidizing conditions, 4) corrosion resistance in aqueous environments, and 5) other properties, such as physical and mechanical, which are necessary to evaluate overall alloy performance.

  9. Two phase titanium aluminide alloy

    DOEpatents

    Deevi, Seetharama C.; Liu, C. T.

    2001-01-01

    A two-phase titanic aluminide alloy having a lamellar microstructure with little intercolony structures. The alloy can include fine particles such as boride particles at colony boundaries and/or grain boundary equiaxed structures. The alloy can include alloying additions such as .ltoreq.10 at % W, Nb and/or Mo. The alloy can be free of Cr, V, Mn, Cu and/or Ni and can include, in atomic %, 45 to 55% Ti, 40 to 50% Al, 1 to 5% Nb, 0.3 to 2% W, up to 1% Mo and 0.1 to 0.3% B. In weight %, the alloy can include 57 to 60% Ti, 30 to 32% Al, 4 to 9% Nb, up to 2% Mo, 2 to 8% W and 0.02 to 0.08% B.

  10. TERNARY ALLOY-CONTAINING PLUTONIUM

    DOEpatents

    Waber, J.T.

    1960-02-23

    Ternary alloys of uranium and plutonium containing as the third element either molybdenum or zirconium are reported. Such alloys are particularly useful as reactor fuels in fast breeder reactors. The alloy contains from 2 to 25 at.% of molybdenum or zirconium, the balance being a combination of uranium and plutonium in the ratio of from 1 to 9 atoms of uranlum for each atom of plutonium. These alloys are prepared by melting the constituent elements, treating them at an elevated temperature for homogenization, and cooling them to room temperature, the rate of cooling varying with the oomposition and the desired phase structure. The preferred embodiment contains 12 to 25 at.% of molybdenum and is treated by quenching to obtain a body centered cubic crystal structure. The most important advantage of these alloys over prior binary alloys of both plutonium and uranium is the lack of cracking during casting and their ready machinability.

  11. Alloy Interface Interdiffusion Modeled

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo H.; Garces, Jorge E.; Abel, Phillip B.

    2003-01-01

    With renewed interest in developing nuclear-powered deep space probes, attention will return to improving the metallurgical processing of potential nuclear fuels so that they remain dimensionally stable over the years required for a successful mission. Previous work on fuel alloys at the NASA Glenn Research Center was primarily empirical, with virtually no continuing research. Even when empirical studies are exacting, they often fail to provide enough insight to guide future research efforts. In addition, from a fundamental theoretical standpoint, the actinide metals (which include materials used for nuclear fuels) pose a severe challenge to modern electronic-structure theory. Recent advances in quantum approximate atomistic modeling, coupled with first-principles derivation of needed input parameters, can help researchers develop new alloys for nuclear propulsion.

  12. Amorphous metal alloy and composite

    DOEpatents

    Wang, Rong; Merz, Martin D.

    1985-01-01

    Amorphous metal alloys of the iron-chromium and nickel-chromium type have excellent corrosion resistance and high temperature stability and are suitable for use as a protective coating on less corrosion resistant substrates. The alloys are stabilized in the amorphous state by one or more elements of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten. The alloy is preferably prepared by sputter deposition.

  13. Titanium-tantalum alloy development

    SciTech Connect

    Cotton, J.D.; Bingert, J.F.; Dunn, P.S.; Butt, D.P.; Margevicius, R.W.

    1996-04-01

    Research has been underway at Los Alamos National Laboratory for several years to develop an alloy capable of containing toxic materials in the event of a fire involving a nuclear weapon. Due to their high melting point, good oxidation resistance, and low solubility in molten plutonium, alloys based on the Ti-Ta binary system have been developed for this purpose. The course of the alloy development to-date, along with processing and property data, are presented in this overview.

  14. Duct and cladding alloy

    DOEpatents

    Korenko, Michael K.

    1983-01-01

    An austenitic alloy having good thermal stability and resistance to sodium corrosion at 700.degree. C. consists essentially of 35-45% nickel 7.5-14% chromium 0.8-3.2% molybdenum 0.3-1.0% silicon 0.2-1.0% manganese 0-0.1% zirconium 2.0-3.5% titanium 1.0-2.0% aluminum 0.02-0.1% carbon 0-0.01% boron and the balance iron.

  15. Shape memory alloy actuator

    DOEpatents

    Varma, Venugopal K.

    2001-01-01

    An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

  16. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  17. Radiation Effects in Refractory Alloys

    NASA Astrophysics Data System (ADS)

    Zinkle, Steven J.; Wiffen, F. W.

    2004-02-01

    In order to achieve the required low reactor mass per unit electrical power for space reactors, refractory alloys are essential due to their high operating temperature capability that in turn enables high thermal conversion efficiencies. One of the key issues associated with refractory alloys is their performance in a neutron irradiation environment. The available radiation effects data are reviewed for alloys based on Mo, W, Re, Nb and Ta. The largest database is associated with Mo alloys, whereas Re, W and Ta alloys have the least available information. Particular attention is focused on Nb-1Zr, which is a proposed cladding and structural material for the reactor in the Jupiter Icy Moons Orbiter (JIMO) project. All of the refractory alloys exhibit qualitatively similar temperature-dependent behavior. At low temperatures up to ~0.3TM, where TM is the melting temperature, the dominant effect of radiation is to produce pronounced radiation hardening and concomitant loss of ductility. The radiation hardening also causes a dramatic decrease in the fracture toughness of the refractory alloys. These low temperature radiation effects occur at relatively low damage levels of ~0.1 displacement per atom, dpa (~2×1024 n/m2, E>0.1 MeV). As a consequence, operation at low temperatures in the presence of neutron irradiation must be avoided for all refractory alloys. At intermediate temperatures (0.3 to 0.6 TM), void swelling and irradiation creep are the dominant effects of irradiation. The amount of volumetric swelling associated with void formation in refractory alloys is generally within engineering design limits (<5%) even for high neutron exposures (>>10 dpa). Very little experimental data exist on irradiation creep of refractory alloys, but data for other body centered cubic alloys suggest that the irradiation creep will produce negligible deformation for near-term space reactor applications.

  18. Directional Solidification of Monotectic Alloys

    NASA Technical Reports Server (NTRS)

    Hellawell, A.

    1983-01-01

    Cooling at certain rates produced fibrous composite structures. Alloy samples melted in alumina or graphite crucibles under argon and then chillcast into 33-mm-diameter rods or sucked directly into 3-mm-bore alumina or silica tubes. Alloying not automatic with immiscible components of different densities and widely different melting points.

  19. Directional Solidification Of Monotectic Alloys

    NASA Technical Reports Server (NTRS)

    Dhindaw, B. K.; Stefanescu, D. M.; Singh, A. K.; Curreri, P. A.

    1990-01-01

    Conditions promoting formation of aligned fibers sought. Report describes experiments in directional solidification of Cu/Pb and Bi/Ga monotectic alloys. Study motivated by need to understand physical mechanism governing formation of rodlike or fiberlike aligned structures in solidifying alloy and to determine process conditions favoring such structures.

  20. Shape memory alloy thaw sensors

    DOEpatents

    Shahinpoor, Mohsen; Martinez, David R.

    1998-01-01

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the Austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states.

  1. PLUTONIUM-CERIUM-COPPER ALLOYS

    DOEpatents

    Coffinberry, A.S.

    1959-05-12

    A low melting point plutonium alloy useful as fuel is a homogeneous liquid metal fueled nuclear reactor is described. Vessels of tungsten or tantalum are useful to contain the alloy which consists essentially of from 10 to 30 atomic per cent copper and the balance plutonium and cerium. with the plutontum not in excess of 50 atomic per cent.

  2. Aluminum and its light alloys

    NASA Technical Reports Server (NTRS)

    Merica, Paul D

    1920-01-01

    Report is a summary of research work which has been done here and abroad on the constitution and mechanical properties of the various alloy systems with aluminum. The mechanical properties and compositions of commercial light alloys for casting, forging, or rolling, obtainable in this country are described.

  3. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.; Gueceri, S. I.; Farkas, D.; Labdon, M. B.; Nagaswami, N.; Pregger, B.

    1981-01-01

    The feasibility of using metal alloys as thermal energy storage media was determined. The following major elements were studied: (1) identification of congruently transforming alloys and thermochemical property measurements; (2) development of a precise and convenient method for measuring volume change during phase transformation and thermal expansion coefficients; (3) development of a numerical modeling routine for calculating heat flow in cylindrical heat exchangers containing phase change materials; and (4) identification of materials that could be used to contain the metal alloys. Several eutectic alloys and ternary intermetallic phases were determined. A method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation from data obtained during one continuous experimental test. The method and apparatus are discussed and the experimental results are presented. The development of the numerical modeling method is presented and results are discussed for both salt and metal alloy phase change media.

  4. Equivalent crystal theory of alloys

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo; Ferrante, John

    1991-01-01

    Equivalent Crystal Theory (ECT) is a new, semi-empirical approach to calculating the energetics of a solid with defects. The theory has successfully reproduced surface energies in metals and semiconductors. The theory of binary alloys to date, both with first-principles and semi-empirical models, has not been very successful in predicting the energetics of alloys. This procedure is used to predict the heats of formation, cohesive energy, and lattice parameter of binary alloys of Cu, Ni, Al, Ag, Au, Pd, and Pt as functions of composition. The procedure accurately reproduces the heats of formation versus composition curves for a variety of binary alloys. The results are then compared with other approaches such as the embedded atom and lattice parameters of alloys from pure metal properties more accurately than Vegard's law is presented.

  5. Mo-Si alloy development

    SciTech Connect

    Liu, C.T.; Heatherly, L.; Wright, J.L.

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  6. Wedlable nickel aluminide alloy

    DOEpatents

    Santella, Michael L.; Sikka, Vinod K.

    2002-11-19

    A Ni.sub.3 Al alloy with improved weldability is described. It contains about 6-12 wt % Al, about 6-12 wt % Cr, about 0-3 wt % Mo, about 1.5-6 wt % Zr, about 0-0.02 wt % B and at least one of about 0-0.15 wt % C, about 0-0.20 wt % Si, about 0-0.01 wt % S and about 0-0.30 wt % Fe with the balance being Ni.

  7. Thermomechanical treatment of alloys

    DOEpatents

    Bates, John F.; Brager, Howard R.; Paxton, Michael M.

    1983-01-01

    An article of an alloy of AISI 316 stainless steel is reduced in size to predetermined dimensions by cold working in repeated steps. Before the last reduction step the article is annealed by heating within a temperature range, specifically between 1010.degree. C. and 1038.degree. C. for a time interval between 90 and 60 seconds depending on the actual temperature. By this treatment the swelling under neutron bombardment by epithermal neutrons is reduced while substantial recrystallization does not occur in actual use for a time interval of at least of the order of 5000 hours.

  8. Aluminum alloy and associated anode and battery

    SciTech Connect

    Tarcy, G.P.

    1990-08-21

    This patent describes an aluminum alloy. It comprises: eutectic amounts of at least two alloying elements selected from the group consisting of bismuth, cadmium, scandium, gallium, indium, lead, mercury, thallium, tin, and zinc with the balance being aluminum and the alloying elements being about 0.01 to 3.0 percent by weight of the alloy.

  9. Galvanic cells including cobalt-chromium alloys.

    PubMed

    Gjerdet, N R

    1980-01-01

    Galvanic cells may be created when dentures made of cobalt-chromium alloys are placed on teeth with metallic restorations. The power of such cells was evaluated in an in vitro galvanic using amalgams, gold alloy, and nickel-chromium alloys. The amalgams and one of the nickel-chromium alloys revealed high corrosion currents when placed in contact with cobalt-chromium alloy, the conventional amalgam showing the highest values. The gold alloy and another nickel-chromium alloy exhibited low corrosion currents and they were noble with respect to cobalt-chromium.

  10. Fatigue of die cast zinc alloys

    SciTech Connect

    Schrems, K.K.; Dogan, O.N.; Goodwin, F.E.

    2006-04-01

    The rotating bending fatigue limit of die cast zinc alloy 2, alloy 3, alloy 5, AcuZinc 5, and ZA-8 were determined as a part of an on-going program by ILZRO into the mechanical properties of die cast zinc. The stress-life (S-N) curves of alloys 3, 5, AcuZinc 5, and ZA-8 were determined previously. This presentation reports the results of the S-N curve for Alloy 2 and the calculated fatigue limits for all five alloys. During the previous stress-life testing, the samples were stopped at 10 million cycles and the fatigue limit for alloy 3, alloy 5, and AcuZinc 5 appeared to be higher and the fatigue limit for ZA-8 appeared to be lower than the values reported in the literature. This was further investigated in alloy 5 and ZA-8 by testing continuous cast bulk alloy 5 and ZA-8.

  11. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOEpatents

    Dunning, John S.; Alman, David E.

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

  12. Oxidation resistant alloys, method for producing oxidation resistant alloys

    DOEpatents

    Dunning, John S.; Alman, David E.

    2002-11-05

    A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

  13. High performance alloy electroforming

    NASA Technical Reports Server (NTRS)

    Malone, G. A.; Winkelman, D. M.

    1989-01-01

    Electroformed copper and nickel are used in structural applications for advanced propellant combustion chambers. An improved process has been developed by Bell Aerospace Textron, Inc. wherein electroformed nickel-manganese alloy has demonstrated superior mechanical and thermal stability when compared to previously reported deposits from known nickel plating processes. Solution chemistry and parametric operating procedures are now established and material property data is established for deposition of thick, large complex shapes such as the Space Shuttle Main Engine. The critical operating variables are those governing the ratio of codeposited nickel and manganese. The deposition uniformity which in turn affects the manganese concentration distribution is affected by solution resistance and geometric effects as well as solution agitation. The manganese concentration in the deposit must be between 2000 and 3000 ppm for optimum physical properties to be realized. The study also includes data regarding deposition procedures for achieving excellent bond strength at an interface with copper, nickel-manganese or INCONEL 718. Applications for this electroformed material include fabrication of complex or re-entry shapes which would be difficult or impossible to form from high strength alloys such as INCONEL 718.

  14. New Amorphous Silicon Alloy Systems

    NASA Astrophysics Data System (ADS)

    Kapur, Mridula N.

    1990-01-01

    The properties of hydrogenated amorphous silicon (a-Si:H) have been modified by alloying with Al, Ga and S respectively. The Al and Ga alloys are in effect quaternary alloys as they were fabricated in a carbon-rich discharge. The alloys were prepared by the plasma assisted chemical vapor deposition (PACVD) method. This method has several advantages, the major one being the relatively low defect densities of the resulting materials. The PACVD system used to grow the alloy films was designed and constructed in the laboratory. It was first tested with known (a-Si:H and a-Si:As:H) materials. Thus, it was established that device quality alloy films could be grown with the home-made PACVD setup. The chemical composition of the alloys was characterized by secondary ion mass spectrometry (SIMS), and electron probe microanalysis (EPMA). The homogeneous nature of hydrogen distribution in the alloys was established by SIMS depth profile analysis. A quantitative analysis of the bulk elemental content was carried out by EPMA. The analysis indicated that the alloying element was incorporated in the films more efficiently at low input gas concentrations than at the higher concentrations. A topological model was proposed to explain the observed behavior. The optical energy gap of the alloys could be varied in the 0.90 to 1.92 eV range. The Al and Ga alloys were low band gap materials, whereas alloying with S had the effect of widening the energy gap. It was observed that although the Si-Al and Si-Ga alloys contained significant amounts of C and H, the magnitude of the energy gap was determined by the metallic component. The various trends in optical properties could be related to the binding characteristics of the respective alloy systems. A quantitative explanation of the results was provided by White's tight binding model. The dark conductivity-temperature dependence of the alloys was examined. A linear dependence was observed for the Al and Ga systems. Electronic conduction in

  15. Heat storage in alloy transformations

    NASA Technical Reports Server (NTRS)

    Birchenall, C. E.

    1980-01-01

    The feasibility of using metal alloys as thermal energy storage media was investigated. The elements selected as candidate media were limited to aluminum, copper, magnesium, silicon, zinc, calcium, and phosphorus on the basis of low cost and latent heat of transformation. Several new eutectic alloys and ternary intermetallic phases were determined. A new method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation. The method and apparatus are discussed and the experimental results are presented for aluminum and two aluminum-eutectic alloys. Candidate materials were evaluated to determine suitable materials for containment of the metal alloys. Graphite was used to contain the alloys during the volume change measurements. Silicon carbide was identified as a promising containment material and surface-coated iron alloys were also evaluated. System considerations that are pertinent if alloy eutectics are used as thermal energy storage media are discussed. Potential applications to solar receivers and industrial furnaces are illustrated schematically.

  16. Dendritic Alloy Solidification Experiment (DASE)

    NASA Technical Reports Server (NTRS)

    Beckermann, C.; Karma, A.; Steinbach, I.; deGroh, H. C., III

    2001-01-01

    A space experiment, and supporting ground-based research, is proposed to study the microstructural evolution in free dendritic growth from a supercooled melt of the transparent model alloy succinonitrile-acetone (SCN-ACE). The research is relevant to equiaxed solidification of metal alloy castings. The microgravity experiment will establish a benchmark for testing of equiaxed dendritic growth theories, scaling laws, and models in the presence of purely diffusive, coupled heat and solute transport, without the complicating influences of melt convection. The specific objectives are to: determine the selection of the dendrite tip operating state, i.e. the growth velocity and tip radius, for free dendritic growth of succinonitrile-acetone alloys; determine the growth morphology and sidebranching behavior for freely grown alloy dendrites; determine the effects of the thermal/solutal interactions in the growth of an assemblage of equiaxed alloy crystals; determine the effects of melt convection on the free growth of alloy dendrites; measure the surface tension anisotropy strength of succinon itrile -acetone alloys establish a theoretical and modeling framework for the experiments. Microgravity experiments on equiaxed dendritic growth of alloy dendrites have not been performed in the past. The proposed experiment builds on the Isothermal Dendritic Growth Experiment (IDGE) of Glicksman and coworkers, which focused on the steady growth of a single crystal from pure supercooled melts (succinonitrile and pivalic acid). It also extends the Equiaxed Dendritic Solidification Experiment (EDSE) of the present investigators, which is concerned with the interactions and transients arising in the growth of an assemblage of equiaxed crystals (succinonitrile). However, these experiments with pure substances are not able to address the issues related to coupled heat and solute transport in growth of alloy dendrites.

  17. Mechanically Alloyed High Entropy Composite

    NASA Astrophysics Data System (ADS)

    Popescu, G.; Adrian, M. M.; Csaki, I.; Popescu, C. A.; Mitrică, D.; Vasile, S.; Carcea, I.

    2016-08-01

    In the last years high entropy alloys have been investigated due to their high hardness, high temperature stability and unusual properties that make these alloys to have significant interest. In comparison with traditional alloys that are based on two or three major elements, this new generation alloys consists at least of 5 principal elements, with the concentration between 5 and 35 at.%. The present paper reports synthesis of high entropy alloys (HEA) and high entropy composites (HEC) synthesized by mechanical alloying (MA). The equiatomic AlCrFeNiMn matrix was used for creating the HEA matrix, starting from elemental powders and as reinforcing material for composites was used pure graphite. The mechanical alloying process was carried out at different duration, in a high energy planetary ball mill, under argon atmosphere. The elemental powders alloying began after '5 hours of milling and was complete after 40 hours. The mechanical alloyed matrix and composite was pressed and heat treated under argon protection. The elemental powers were investigated for physical - technological properties, and by X-ray diffraction and scanning electron microscopy. Phase pressing operation was realized with a hydraulic press and the applied pressure was progressive. The sintering process was carried out at 850°C for 2 h. The X-ray diffraction revealed that the MA process resulted in solid solutions formation and also revealed body- centred cubic (BCC) and face-centred cubic (FCC) structures with average grain size around 40 nm. In addition, nanoscale particles were highlighted by scanning electron microscopy, as well as the homogeneity of the chemical composition of the matrix and composite that was confirmed by EDX microanalysis. It was noted that HEA matrix and HEA composites were processed with a high degree of compaction and with a quite large capacity of mixed powder densification (around 70%).

  18. Mechanical alloying of biocompatible Co-28Cr-6Mo alloy.

    PubMed

    Sánchez-De Jesús, F; Bolarín-Miró, A M; Torres-Villaseñor, G; Cortés-Escobedo, C A; Betancourt-Cantera, J A

    2010-07-01

    We report on an alternative route for the synthesis of crystalline Co-28Cr-6Mo alloy, which could be used for surgical implants. Co, Cr and Mo elemental powders, mixed in an adequate weight relation according to ISO Standard 58342-4 (ISO, 1996), were used for the mechanical alloying (MA) of nano-structured Co-alloy. The process was carried out at room temperature in a shaker mixer mill using hardened steel balls and vials as milling media, with a 1:8 ball:powder weight ratio. Crystalline structure characterization of milled powders was carried out by X-ray diffraction in order to analyze the phase transformations as a function of milling time. The aim of this work was to evaluate the alloying mechanism involved in the mechanical alloying of Co-28Cr-6Mo alloy. The evolution of the phase transformations with milling time is reported for each mixture. Results showed that the resultant alloy is a Co-alpha solid solution, successfully obtained by mechanical alloying after a total of 10 h of milling time: first Cr and Mo are mechanically prealloyed for 7 h, and then Co is mixed in for 3 h. In addition, different methods of premixing were studied. The particle size of the powders is reduced with increasing milling time, reaching about 5 mum at 10 h; a longer time promotes the formation of aggregates. The morphology and crystal structure of milled powders as a function of milling time were analyzed by scanning electron microscopy and XR diffraction. PMID:20364362

  19. High strength ferritic alloy

    DOEpatents

    Hagel, William C.; Smidt, Frederick A.; Korenko, Michael K.

    1977-01-01

    A high-strength ferritic alloy useful for fast reactor duct and cladding applications where an iron base contains from about 9% to about 13% by weight chromium, from about 4% to about 8% by weight molybdenum, from about 0.2% to about 0.8% by weight niobium, from about 0.1% to about 0.3% by weight vanadium, from about 0.2% to about 0.8% by weight silicon, from about 0.2% to about 0.8% by weight manganese, a maximum of about 0.05% by weight nitrogen, a maximum of about 0.02% by weight sulfur, a maximum of about 0.02% by weight phosphorous, and from about 0.04% to about 0.12% by weight carbon.

  20. Electromagnetic Casting of Copper Alloys

    NASA Astrophysics Data System (ADS)

    Tyler, D. E.; Lewis, B. G.; Renschen, P. D.

    1985-09-01

    Electromagnetic (EMC) casting technology has been successfully developed for copper base alloys. This casting technique eliminates the mold related defects normally encountered in direct chill (DC) mold casting, and provides castings with greatly improved hot workability.

  1. Magnesium Alloys and their Applications

    NASA Astrophysics Data System (ADS)

    Kainer, Karl U.

    1999-04-01

    In the recent years there has been a dramatic increase in research activity and also applications of magnesium alloys. The driving force is the growing demand by the automobile industry resulting from the pressure to reduce weight and hence to reduce the fuel consumption. The U.S. car industry incorporates the largest amount of magnesium at the present time. In Europe, Volkswagen had a history of using magnesium in the VW Beetle. Volkswagen, in common with other major car producers has initiated a major research and development programme for advanced magnesium materials. The main emphasis of this book is in the field of general physical metallurgy and alloy development refelcting the need to provide a wider range of alloys both casting and wrought alloys to meet the increasing demands of industry. Other topics are nevertheless well represented such as casting, recycling, joining, corrosion, and surface treatment.

  2. Tritium Production from Palladium Alloys

    SciTech Connect

    Claytor, T.N.; Schwab, M.J.; Thoma, D.J.; Teter, D.F.; Tuggle, D.G.

    1998-04-19

    A number of palladium alloys have been loaded with deuterium or hydrogen under low energy bombardment in a system that allows the continuous measurement of tritium. Long run times (up to 200 h) result in an integration of the tritium and this, coupled with the high intrinsic sensitivity of the system ({approximately}0.1 nCi/l), enables the significance of the tritium measurement to be many sigma (>10). We will show the difference in tritium generation rates between batches of palladium alloys (Rh, Co, Cu, Cr, Ni, Be, B, Li, Hf, Hg and Fe) of various concentrations to illustrate that tritium generation rate is dependent on alloy type as well as within a specific alloy, dependent on concentration.

  3. Technical Seminar "Shape Memory Alloys"

    NASA Video Gallery

    Shape memory alloys are a unique group of materials that remember their original shape and return to that shape after being strained. How could the aerospace, automotive, and energy exploration ind...

  4. Manufacturing of High Entropy Alloys

    NASA Astrophysics Data System (ADS)

    Jablonski, Paul D.; Licavoli, Joseph J.; Gao, Michael C.; Hawk, Jeffrey A.

    2015-07-01

    High entropy alloys (HEAs) have generated interest in recent years due to their unique positioning within the alloy world. By incorporating a number of elements in high proportion they have high configurational entropy, and thus they hold the promise of interesting and useful properties such as enhanced strength and phase stability. The present study investigates the microstructure of two single-phase face-centered cubic (FCC) HEAs, CoCrFeNi and CoCrFeNiMn, with special attention given to melting, homogenization and thermo-mechanical processing. Large-scale ingots were made by vacuum induction melting to avoid the extrinsic factors inherent in small-scale laboratory button samples. A computationally based homogenization heat treatment was applied to both alloys in order to eliminate segregation due to normal ingot solidification. The alloys fabricated well, with typical thermo-mechanical processing parameters being employed.

  5. Casting Characteristics of Aluminum Die Casting Alloys

    SciTech Connect

    Makhlouf M. Makhlouf; Diran Apelian

    2002-02-05

    The research program investigates the casting characteristics of selected aluminum die casting alloys. Specifically, the alloys' tendencies towards die soldering and sludge formation, and the alloys' fluidity and machinability are evaluated. It was found that: When the Fe and Mn contents of the alloy are low; caution has to be taken against possible die soldering. When the alloy has a high sludge factor, particularly a high level of Fe, measures must be taken to prevent the formation of large hardspots. For this kind of alloy, the Fe content should be kept at its lowest allowable level and the Mn content should be at its highest possible level. If there are problems in die filling, measures other than changing the alloy chemistry need to be considered first. In terms of alloy chemistry, the elements that form high temperature compounds must be kept at their lowest allowable levels. The alloys should not have machining problems when appropriate machining techniques and machining parameters are used.

  6. Castable hot corrosion resistant alloy

    NASA Technical Reports Server (NTRS)

    Barrett, Charles A. (Inventor); Holt, William H. (Inventor)

    1988-01-01

    Some 10 wt percent nickel is added to an Fe-base alloy which has a ferrite microstructure to improve the high temperature castability and crack resistance while about 0.2 wt percent zirconium is added for improved high temperatur cyclic oxidation and corrosion resistance. The basic material is a high temperature FeCrAl heater alloy, and the addition provides a material suitable for burner rig nozzles.

  7. Shape memory alloy thaw sensors

    DOEpatents

    Shahinpoor, M.; Martinez, D.R.

    1998-04-07

    A sensor permanently indicates that it has been exposed to temperatures exceeding a critical temperature for a predetermined time period. An element of the sensor made from shape memory alloy changes shape when exposed, even temporarily, to temperatures above the austenitic temperature of the shape memory alloy. The shape change of the SMA element causes the sensor to change between two readily distinguishable states. 16 figs.

  8. Superplastic forming of alloy 718

    SciTech Connect

    Smith, G.D.; Flower, H.L. )

    1994-04-01

    Inconel Alloy 718 (UNS N07718) is now available in a fine-grained, controlled composition modification that can be super-plastically formed. The new superplastic forming (SPF) capability allows the manufacture of large, complex, and detailed parts, which improves integrity by reducing the need for joining. Furthermore, it allows designers to fabricate components having higher strength, fatigue resistance, and temperature capability than parts made of aluminum or titanium alloys.

  9. Effects of varying indium composition on the thermoelectric properties of In x Ga1- x Sb ternary alloys

    NASA Astrophysics Data System (ADS)

    Nirmal Kumar, V.; Arivanandan, M.; Koyoma, T.; Udono, H.; Inatomi, Y.; Hayakawa, Y.

    2016-10-01

    In x Ga1- x Sb ( x = 0-1), a III-V ternary alloy, was grown by melt solidification process. The effects of varying indium composition on the thermoelectric properties of In x Ga1- x Sb polycrystals were studied for the first time. The segregations of indium and gallium elements were observed in the grown crystals, and the defects present in crystals were revealed by etching process. Room-temperature Raman measurement revealed that the dominant optical modes of phonon vibrations in InSb and GaSb binaries were suppressed in In x Ga1- x Sb ternaries. The in-phase vibrations of acoustic mode phonons were scattered more effectively in In x Ga1- x Sb by the present defects, and the relative value of lattice thermal conductivity was reduced. Thus, the thermal conductivity of InSb and GaSb binaries was drastically reduced in In x Ga1- x Sb by alloy scattering. InSb indicated the highest ZT 0.51 because of its higher power factor 70 µW/cmK2. Next to InSb, In0.8Ga0.2Sb had higher ZT value of 0.29 at 600 K among the In x Ga1- x Sb ternaries. The ZT of In0.8Ga0.2Sb was increased about 30 times than that of GaSb by the increase of power factor as well as the decrease of thermal conductivity.

  10. Ni{sub 3}Al aluminide alloys

    SciTech Connect

    Liu, C.T.

    1993-10-01

    This paper provides a brief review of the recent progress in research and development of Ni{sub 3}Al and its alloys. Emphasis has been placed on understanding low ductility and brittle fracture of Ni{sub 3}Al alloys at ambient and elevated temperatures. Recent studies have resulted in identifying both intrinsic and extrinsic factors governing the fracture behavior of Ni{sub 3}Al alloys. Parallel efforts on alloy design using physical metallurgy principles have led to properties for structural use. Industrial interest in these alloys is high, and examples of industrial involvement in processing and utilization of these alloys are briefly mentioned.

  11. Choosing An Alloy For Automotive Stirling Engines

    NASA Technical Reports Server (NTRS)

    Stephens, Joseph R.

    1988-01-01

    Report describes study of chemical compositions and microstructures of alloys for automotive Stirling engines. Engines offer advantages of high efficiency, low pollution, low noise, and ability to use variety of fuels. Twenty alloys evaluated for resistance to corrosion permeation by hydrogen, and high temperature. Iron-based alloys considered primary candidates because of low cost. Nickel-based alloys second choice in case suitable iron-based alloy could not be found. Cobalt-based alloy included for comparison but not candidate, because it is expensive strategic material.

  12. Exchange interactions and Curie temperatures in Cr-based alloys in the zinc blende structure: Volume- and composition-dependence from first-principles calculations

    NASA Astrophysics Data System (ADS)

    Bose, S. K.; Kudrnovský, J.

    2010-02-01

    We present calculations of the exchange interactions and Curie temperatures in Cr-based pnictides and chalcogenides of the form CrX , with X=As , Sb, S, Se, and Te, and the mixed alloys CrAs50X50 , with X=Sb , S, Se, and Te. The calculations are performed for zinc blende structure for 12 values of the lattice parameter between 5.44 and 6.62Å , appropriate for some typical II-VI and III-V semiconducting substrates. Electronic structure is calculated via the linear muffin-tin-orbitals (LMTOs) method in the atomic sphere approximation (ASA) using empty spheres to optimize ASA-related errors. Whenever necessary, the results have been verified using the full-potential version of the method, FP-LMTO. The disorder effect in the As-sublattice for CrAs50X50 (X=Sb,S,Se,Te) alloys is taken into account via the coherent-potential approximation. Exchange interactions are calculated using the linear-response method for the ferromagnetic (FM) reference states of the alloys as well as the disordered local moments (DLM) states. These results are then used to estimate the Curie temperature from the low- and high-temperature sides of the ferromagnetic-paramagnetic transition. Estimates of the Curie temperature are provided based on the mean field and the more accurate random-phase approximations. Dominant antiferromagnetic exchange interactions for some low values of the lattice parameter for the FM reference states in CrS, CrSe, and CrTe prompted us to look for antiferromagnetic (AFM) configurations for these systems with energies lower than the corresponding FM and DLM values. Results for a limited number of such AFM calculations are discussed, identifying the AFM[111] state as a likely candidate for the ground state for these cases.

  13. Alloy 602 CA -- A new alloy for the furnace industry

    SciTech Connect

    Brill, U.; Agarwal, D.C.

    1995-12-31

    Improving the economics of heat treatment facilities is often a question of raising the service temperature, which itself rests on the temperature capability of the alloys used. With the newly-developed alloy 602CA introduced to the market in 1992, there is now a nickel-base alloy available which provides sufficient high temperature strength and corrosion resistance up to 1,200 C, without any, special requirements on manufacturing and processing. Because of the excellent mechanical properties and corrosion resistance of this alloy it was possible to substitute uncooled all-metal furnace rolls for water-cooled asbestos rolls, in a continuous annealing furnace operating at up to 1,200 C. These rolls have now been in service for up to two years without any technical problems, and have proved themselves as a more economic and less environmentally dangerous, solution, This paper describes the mechanical properties and corrosion behavior of the new alloy, and gives some calculations on economic efficiency.

  14. Ab-initio DFT FP-LAPW GGA and LDA TB-mBJ and SO theoretical study of structural and elastic properties of Zinc-Blende crystal phase GaAs1-xBix alloys

    NASA Astrophysics Data System (ADS)

    Menezla, S.; Kadri, A.; Zitouni, K.; Djelal, A.; Djermouni, M.; Hallouche, A.; Zaoui, A.

    2015-12-01

    We present an ab-initio theoretical study of structural and elastic properties of GaAs1-xBix alloys in the Zinc-Blende (ZB) phase. We use a recent version of Wien2k package code based on Density Functional Theory (DFT) Full Potential and Linearized Augmented Plane Waves (FP-LAPW) method including recent Tran-Blaha modified Becke-Johnson correction of the exchange potential (TB-mBJ) and the spin-orbit interaction (SO). The calculations are performed within the Local Density Approximation (LDA) as well as the Generalized Gradient Approximation (GGA). We study first the structural properties of GaAs1-xBix alloys by solving Murnaghan equation of state. Our results show that the ZB phase is the lowest equilibrium crystal structure of GaAs1-xBix in the whole alloy composition range, in agreement with previous theoretical predictions. The variations versus Bi contents of the ZB GaAs1-xBix lattice constant a0, bulk modulus B0 and its pressure derivative B0‧ are also found very close to other theoretical and experimental data, but with much smaller bowing effects indicating a better resolution thanks to TB-mBJ correction. The variations of B0 versus the reverse equilibrium volume of the unit cell (1/V0) are found to be described by the simple linear empirical expression B0 = -0.21068 + 0.16695/V0 which is close to the theoretical prediction for III-V semiconductors with, however, somewhat lower linear coefficients values, suggesting a more metallic behavior. In a second part of this work, we use Birch-Murnaghan approach to study the elastic properties of GaAs1-xBix alloys. The elastic stiffness coefficients, C11, C12 and C44, and their variations versus alloy composition were determined for ZB GaAs1-xBix alloy. Their values in GaAs and GaBi binary compounds are found in very good agreement with available experimental and/or theoretical data. Their variations in GaAs1-xBix alloy show a monotonic decrease with increasing Bi contents, indicating a softening behavior as is

  15. Imprinting bulk amorphous alloy at room temperature

    PubMed Central

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-01-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment. PMID:26563908

  16. Imprinting bulk amorphous alloy at room temperature.

    PubMed

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T; Lograsso, Thomas A; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-01-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment. PMID:26563908

  17. Imprinting bulk amorphous alloy at room temperature

    NASA Astrophysics Data System (ADS)

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-11-01

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. Our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.

  18. Imprinting bulk amorphous alloy at room temperature

    SciTech Connect

    Kim, Song-Yi; Park, Eun-Soo; Ott, Ryan T.; Lograsso, Thomas A.; Huh, Moo-Young; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2015-11-13

    We present investigations on the plastic deformation behavior of a brittle bulk amorphous alloy by simple uniaxial compressive loading at room temperature. A patterning is possible by cold-plastic forming of the typically brittle Hf-based bulk amorphous alloy through controlling homogenous flow without the need for thermal energy or shaping at elevated temperatures. The experimental evidence suggests that there is an inconsistency between macroscopic plasticity and deformability of an amorphous alloy. Moreover, imprinting of specific geometrical features on Cu foil and Zr-based metallic glass is represented by using the patterned bulk amorphous alloy as a die. These results demonstrate the ability of amorphous alloys or metallic glasses to precisely replicate patterning features onto both conventional metals and the other amorphous alloys. In conclusion, our work presents an avenue for avoiding the embrittlement of amorphous alloys associated with thermoplastic forming and yields new insight the forming application of bulk amorphous alloys at room temperature without using heat treatment.

  19. High strength forgeable tantalum base alloy

    NASA Technical Reports Server (NTRS)

    Buckman, R. W., Jr.

    1975-01-01

    Increasing tungsten content of tantalum base alloy to 12-15% level will improve high temperature creep properties of existing tantalum base alloys while retaining their excellent fabrication and welding characteristics.

  20. Alloy hardening and softening in binary molybdenum alloys as related to electron concentration

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1972-01-01

    An investigation was conducted to determine the effects of alloy additions of hafnium, tantalum, tungsten, rhenium, osmium, iridium, and platinum on hardness of molybdenum. Special emphasis was placed on alloy softening in these binary molybdenum alloys. Results showed that alloy softening was produced by those elements having an excess of s+d electrons compared to molybdenum, while those elements having an equal number or fewer s+d electrons that molybdenum failed to produce alloy softening. Alloy softening and alloy hardening can be correlated with the difference in number of s+d electrons of the solute element and molybdenum.

  1. Superconducting compounds and alloys research

    NASA Technical Reports Server (NTRS)

    Otto, G.

    1975-01-01

    Resistivity measurements as a function of temperature were performed on alloys of the binary material system In sub(1-x) Bi sub x for x varying between 0 and 1. It was found that for all single-phase alloys (the pure elements, alpha-In, and the three intermetallic compounds) at temperatures sufficiently above the Debye-temperature, the resistivity p can be expressed as p = a sub o T(n), where a sub o and n are composition-dependent constants. The same exponential relationship can also be applied for the sub-system In-In2Bi, when the two phases are in compositional equilibrium. Superconductivity measurements on single and two-phase alloys can be explained with respect to the phase diagram. There occur three superconducting phases (alpha-In, In2Bi, and In5Bi3) with different transition temperatures in the alloying system. The magnitude of the transition temperatures for the various intermetallic phases of In-Bi is such that the disappearance or occurrence of a phase in two component alloys can be demonstrated easily by means of superconductivity measurements.

  2. Oxidation of low cobalt alloys

    NASA Technical Reports Server (NTRS)

    Barrett, C. A.

    1982-01-01

    Four high temperature alloys: U-700, Mar M-247, Waspaloy and PM/HIP U-700 were modified with various cobalt levels ranging from 0 percent to their nominal commercial levels. The alloys were then tested in cyclic oxidation in static air at temperatures ranging from 1000 to 1150 C at times from 500 to 100 1 hour cycles. Specific weight change with time and X-ray diffraction analyses of the oxidized samples were used to evaluate the alloys. The alloys tend to be either Al2O3/aluminate spinel or Cr2O3/chromite spinel formers depending on the Cr/Al ratio in the alloy. Waspaloy with a ratio of 15:1 is a strong Cr2O3 former while this U-700 with a ratio of 3.33:1 tends to form mostly Cr2O3 while Mar M-247 with a ratio of 1.53:1 is a strong Al2O3 former. The best cyclic oxidation resistance is associated with the Al2O3 formers. The cobalt levels appear to have little effect on the oxidation resistance of the Al2O3/aluminate spinel formers while any tendency to form Cr2O3 is accelerated with increased cobalt levels and leads to increased oxidation attack.

  3. HEAT TREATED U-Nb ALLOYS

    DOEpatents

    McGeary, R.K.; Justusson, W.M.

    1959-11-24

    A fuel element for a nuclear reactor is described comprising an alloy containing uranium and from 7 to 20 wt.% niobium, the alloy being substantially in the gamma phase and having been produced by working an ingot of the alloy into the desired shape, homogenizing it by annealing it at a temperature in the gamma phase field, and quenching it to retain the gamma phase structure of the alloy.

  4. Nickel aluminide alloys with improved weldability

    DOEpatents

    Santella, Michael L.; Goodwin, Gene M.

    1995-05-09

    Weldable nickel aluminide alloys which are essentially free, if not entirely free, of weld hot cracking are provided by employing zirconium concentrations in these alloys of greater than 2.6 wt. % or sufficient to provide a substantial presence of Ni--Zr eutectic phase in the weld so as to prevent weld hot cracking. Weld filler metals formed from these so modified nickel aluminide alloys provide for crack-free welds in previously known nickel aluminide alloys.

  5. Nickel aluminide alloys with improved weldability

    DOEpatents

    Santella, M.L.; Goodwin, G.M.

    1995-05-09

    Weldable nickel aluminide alloys which are essentially free, if not entirely free, of weld hot cracking are provided by employing zirconium concentrations in these alloys of greater than 2.6 wt. % or sufficient to provide a substantial presence of Ni--Zr eutectic phase in the weld so as to prevent weld hot cracking. Weld filler metals formed from these so modified nickel aluminide alloys provide for crack-free welds in previously known nickel aluminide alloys. 5 figs.

  6. New Theoretical Technique for Alloy Design

    NASA Technical Reports Server (NTRS)

    Ferrante, John

    2005-01-01

    During the last 2 years, there has been a breakthrough in alloy design at the NASA Lewis Research Center. A new semi-empirical theoretical technique for alloys, the BFS Theory (Bozzolo, Ferrante, and Smith), has been used to design alloys on a computer. BFS was used, along with Monte Carlo techniques, to predict the phases of ternary alloys of NiAl with Ti or Cr additions. High concentrations of each additive were used to demonstrate the resulting structures.

  7. Self-disintegrating Raney metal alloys

    DOEpatents

    Oden, Laurance L.; Russell, James H.

    1979-01-01

    A method of preparing a Raney metal alloy which is capable of self-disintegrating when contacted with water vapor. The self-disintegrating property is imparted to the alloy by incorporating into the alloy from 0.4 to 0.8 weight percent carbon. The alloy is useful in forming powder which can be converted to a Raney metal catalyst with increased surface area and catalytic activity.

  8. Caldron For High-Temperature Alloys

    NASA Technical Reports Server (NTRS)

    Geringer, Henry J.

    1989-01-01

    Induction-heated caldron melts high-temperature alloys. Prevents sort of contamination of melts occurring during arc melting in ceramic crucibles. Liquefies 200 grams of solid metal components of alloy like niobium aluminum and makes alloy homogeneous in less than 3 minutes. Plugged sleeve constitutes main body of caldron. Coolant flows through sleeve to prevent it from melting. Mandrel-wound induction coils adjusted to tune source of power. Also serves as mold for casting alloys into such shapes as bars.

  9. PREPARATION OF URANIUM-ALUMINUM ALLOYS

    DOEpatents

    Moore, R.H.

    1962-09-01

    A process is given for preparing uranium--aluminum alloys from a solution of uranium halide in an about equimolar molten alkali metal halide-- aluminum halide mixture and excess aluminum. The uranium halide is reduced and the uranium is alloyed with the excess aluminum. The alloy and salt are separated from each other. (AEC)

  10. ALLOY FOR USE IN NUCLEAR FISSION

    DOEpatents

    Spedding, F.A.; Wilhelm, H.A.

    1958-03-11

    This patent relates to an alloy composition capable of functioning as a solid homogeneous reactor fuel. The alloy consists of a beryllium moderator, together with at least 0.7% of U/sup 235/, and up to 50% thorium to give increased workability to the alloy.

  11. High strength uranium-tungsten alloy process

    DOEpatents

    Dunn, Paul S.; Sheinberg, Haskell; Hogan, Billy M.; Lewis, Homer D.; Dickinson, James M.

    1990-01-01

    Alloys of uranium and tungsten and a method for making the alloys. The amount of tungsten present in the alloys is from about 4 wt % to about 35 wt %. Tungsten particles are dispersed throughout the uranium and a small amount of tungsten is dissolved in the uranium.

  12. High strength uranium-tungsten alloys

    DOEpatents

    Dunn, Paul S.; Sheinberg, Haskell; Hogan, Billy M.; Lewis, Homer D.; Dickinson, James M.

    1991-01-01

    Alloys of uranium and tungsten and a method for making the alloys. The amount of tungsten present in the alloys is from about 4 wt % to about 35 wt %. Tungsten particles are dispersed throughout the uranium and a small amount of tungsten is dissolved in the uranium.

  13. METHOD OF DISSOLVING REFRACTORY ALLOYS

    DOEpatents

    Helton, D.M.; Savolainen, J.K.

    1963-04-23

    This patent relates to the dissolution of alloys of uranium with zirconium, thorium, molybdenum, or niobium. The alloy is contacted with an anhydrous solution of mercuric chloride in a low-molecular-weight monohydric alcohol to produce a mercury-containing alcohol slurry. The slurry is then converted to an aqueous system by adding water and driving off the alcohol. The resulting aqueous slurry is electrolyzed in the presence of a mercury cathode to remove the mercury and produce a uranium-bearing aqueous solution. This process is useful for dissolving irradiated nuclear reactor fuels for radiochemical reprocessing by solvent extraction. In addition, zirconium-alloy cladding is selectively removed from uranium dioxide fuel compacts by this means. (AEC)

  14. Solidification morphologies in monotectic alloys

    NASA Astrophysics Data System (ADS)

    Wang, F.; Choudhury, A.; Nestler, B.

    2012-01-01

    We model the Fe-Sn system by using a higher order polynomial to describe the free energy of the liquid, and study three different aspects in morphological evolution in the monotectic alloy. Firstly, phase separation, in which case the liquid decomposes into two, is investigated inside of the spinodal decomposition region. Secondly, we study the core-shell morphology in the Fe-Sn alloy, which arises by spinodal decomposition in 2D. Finally, stable lamellar and unstable droplet morphologies in directional solidication are investigated.

  15. Method for calculating alloy energetics

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo; Ferrante, John; Smith, John R.

    1992-01-01

    A semiempirical method for the computation of alloy energies is introduced. It is based on the equivalent-crystal theory of defect-formation energies in elemental solids. The method is both simple and accurate. Heats of formation as a function of composition are computed for some binary alloys of Cu, Ni, Al, Ag, Pd, Pt, and Au using the heats of solution in the dilute limit as experimental input. The separation of heats into strain and chemical components helps in understanding the energetics. In addition, lattice-parameter contractions seen in solid solutions of Ag and Au are accurately predicted. Good agreement with experiment is obtained in all cases.

  16. Moving Dislocations in Disordered Alloys.

    SciTech Connect

    Marian, J; Caro, A

    2006-11-18

    Using atomistic simulations of dislocation motion in Ni and Ni-Au alloys we report a detailed study of the mobility function as a function of stress, temperature and alloy composition. We analyze the results in terms of analytic models of phonon radiation and their selection rules for phonon excitation. We find a remarkable agreement between the location of the cusps in the {sigma}-v relation and the velocity of waves propagating in the direction of dislocation motion. We identify and characterize three regimes of dissipation whose boundaries are essentially determined by the direction of motion of the dislocation, rather than by its screw or edge character.

  17. High strength, tough alloy steel

    DOEpatents

    Thomas, Gareth; Rao, Bangaru V. N.

    1979-01-01

    A high strength, tough alloy steel is formed by heating the steel to a temperature in the austenite range (1000.degree.-1100.degree. C.) to form a homogeneous austenite phase and then cooling the steel to form a microstructure of uniformly dispersed dislocated martensite separated by continuous thin boundary films of stabilized retained austenite. The steel includes 0.2-0.35 weight % carbon, at least 1% and preferably 3-4.5% chromium, and at least one other substitutional alloying element, preferably manganese or nickel. The austenite film is stable to subsequent heat treatment as by tempering (below 300.degree. C.) and reforms to a stable film after austenite grain refinement.

  18. PROCESS OF DISSOLVING ZIRCONIUM ALLOYS

    DOEpatents

    Shor, R.S.; Vogler, S.

    1958-01-21

    A process is described for dissolving binary zirconium-uranium alloys where the uranium content is about 2%. In prior dissolution procedures for these alloys, an oxidizing agent was added to prevent the precipitation of uranium tetrafluoride. In the present method complete dissolution is accomplished without the use of the oxidizing agent by using only the stoichiometric amount or slight excess of HF required by the zirconium. The concentration of the acid may range from 2M to 10M and the dissolution is advatageously carried out at a temperature of 80 deg C.

  19. Alloy 718 for Oilfield Applications

    NASA Astrophysics Data System (ADS)

    deBarbadillo, John J.; Mannan, Sarwan K.

    2012-02-01

    Alloy 718 (UNS N07718) was developed for use in aircraft gas turbine engines, but its unique combination of room-temperature strength and aqueous corrosion resistance made it a candidate for oilfield fasteners, valves, drill tools, and completion equipment. As well environments became more severe, stress corrosion and hydrogen embrittlement failures in production equipment drove the evolution of the composition and microstructure that distinguish today's oilfield-grade 718 from aerospace grades. This paper reviews the development of the grade and its applications and describes some of its unique characteristics, testing, and manufacturing methods as well as newer alloys designed for high-pressure high-temperature (HPHT) conditions.

  20. Imparting passivity to vapor deposited magnesium alloys

    NASA Astrophysics Data System (ADS)

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  1. Imparting passivity to vapor deposited magnesium alloys

    NASA Astrophysics Data System (ADS)

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  2. Alloy softening in binary iron solid solutions

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1976-01-01

    An investigation was conducted to determine softening and hardening behavior in 19 binary iron-alloy systems. Microhardness tests were conducted at four temperatures in the range 77 to 411 K. Alloy softening was exhibited by 17 of the 19 alloy systems. Alloy softening observed in 15 of the alloy systems was attributed to an intrinsic mechanism, believed to be lowering of the Peierls (lattice friction) stress. Softening and hardening rates could be correlated with the atomic radius ratio of solute to iron. Softening observed in two other systems was attributed to an extrinsic mechanism, believed to be associated with scavenging of interstitial impurities.

  3. Phase transformation of Mg-Fe alloys

    SciTech Connect

    Yoneda, Yasuhiro; Abe, Hiroshi; Ohshima, Takeshi; Uchida, Hirohisa

    2010-05-15

    An Mg-Fe alloy system prepared through mechanical alloying (MA) was structurally analyzed. MA can produce single-phase bcc alloys using Mg concentrations up to about 15 mol %. Use of conventional average structure analysis and x-ray pair-distribution function method enabled the long-range and short-range order structures of the Mg-Fe alloys to be bridged. The substituted Mg atoms were randomly arranged in the low-Mg composition but started to have an order structure. The partially ordered Mg-Fe alloy undergoes an austenitic (cubic) to martensitic (orthorhombic) phase change, as increasing Mg composition.

  4. Liquid metal ion source and alloy

    DOEpatents

    Clark, Jr., William M.; Utlaut, Mark W.; Behrens, Robert G.; Szklarz, Eugene G.; Storms, Edmund K.; Santandrea, Robert P.; Swanson, Lynwood W.

    1988-10-04

    A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy the arsenic is combined with palladium, preferably in a liquid alloy having a range of compositions from about 24 to about 33 atomic percent arsenic. Such an alloy may be readily prepared by a combustion synthesis technique. Liquid metal ion sources thus prepared produce arsenic ions for implantation, have long lifetimes, and are highly stable in operation.

  5. Stress corrosion of high strength aluminum alloys.

    NASA Technical Reports Server (NTRS)

    Cocks, F. H.; Brummer, S. B.

    1972-01-01

    An investigation has been carried out to examine the relationship of the observed chemical and mechanical properties of Al-Cu and Al-Zn-Mg alloys to the stress corrosion mechanisms which dominate in each case. Two high purity alloys and analogous commercial alloys were selected. Fundamental differences between the behavior of Al-Cu and of Al-Zn-Mg alloys were observed. These differences in the corrosion behavior of the two types of alloys are augmented by substantial differences in their mechanical behavior. The relative cleavage energy of the grain boundaries is of particular importance.

  6. ZIRCONIUM-TITANIUM-BERYLLIUM BRAZING ALLOY

    DOEpatents

    Gilliland, R.G.; Patriarca, P.; Slaughter, G.M.; Williams, L.C.

    1962-06-12

    A new and improved ternary alloy is described which is of particular utility in braze-bonding parts made of a refractory metal selected from Group IV, V, and VI of the periodic table and alloys containing said metal as a predominating alloying ingredient. The brazing alloy contains, by weight, 40 to 50 per cent zirconium, 40 to 50 per cent titanium, and the balance beryllium in amounts ranging from 1 to 20 per cent, said alloy having a melting point in the range 950 to 1400 deg C. (AEC)

  7. Protective claddings for high strength chromium alloys

    NASA Technical Reports Server (NTRS)

    Collins, J. F.

    1971-01-01

    The application of a Cr-Y-Hf-Th alloy as a protective cladding for a high strength chromium alloy was investigated for its effectiveness in inhibiting nitrogen embrittlement of a core alloy. Cladding was accomplished by a combination of hot gas pressure bonding and roll cladding techniques. Based on bend DBTT, the cladding alloy was effective in inhibiting nitrogen embrittlement of the chromium core alloy for up to 720 ks (200hours) in air at 1422 K (2100 F). A significant increase in the bend DBTT occurred with longer time exposures at 1422 K or short time exposures at 1589 K (2400 F).

  8. Spin dynamics of complex oxides, bismuth-antimony alloys, and bismuth chalcogenides

    NASA Astrophysics Data System (ADS)

    Sahin, Cuneyt

    The emerging field of spintronics relies on the manipulation of electron spin in order to use it in spin-based electronics. Such a paradigm change has to tackle several challenges including finding materials with sufficiently long spin lifetimes and materials which are efficient in generating pure spin currents. This thesis predicts that two types of material families could be a solution to the aforementioned challenges: complex oxides and bismuth based materials. We derived a general approach for constructing an effective spin-orbit Hamiltonian which is applicable to all nonmagnetic materials. This formalism is useful for calculating spin-dependent properties near an arbitrary point in momentum space. We also verified this formalism through comparisons with other approaches for III-V semiconductors, and its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained strontium titanate (STO) and a two-dimensional electron gas in STO (such as at the LAO/STO interface). Our results suggest robust spin coherence and spin transport properties in STO related materials even at room temperature. In the second part of the study we calculated intrinsic spin Hall conductivities for bismuth-antimony (BISb) semimetals with strong spin-orbit couplings, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ((h/e)O--1cm--1) for bismuth to 96((h/e)O--1cm --1) for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi0.83Sb0.17. The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi0.83Sb0.17, by changing the chemical potential by 0.5 e

  9. Alloy softening in binary iron solid solutions

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Witzke, W. R.

    1976-01-01

    An experimental study was conducted to determine whether alloy softening in Fe alloys is dependent on electron concentration and to provide a direct comparison of alloy softening and hardening in several binary Fe alloy systems having the same processing history. Alloy additions to Fe included the elements in the Periods 4-6 and the Groups IV-VIII with the exception of technetium. A total of 19 alloy systems was investigated, and hardness testing was the primary means of evaluation. Testing was carried out at four temperatures over a homologous temperature range of 0.043-0.227 times the absolute melting temperature of unalloyed Fe. Major conclusions are that the atomic radius ratio of solute-to-Fe is the key factor in controlling low-temperature hardness of the binary Fe alloys and that alloy softening rates at 77 K and alloy hardening rates at 411 K are correlated with this atomic radius ratio for 15 of the binary alloy systems. Mechanisms of alloy softening and hardening are proposed.

  10. Environmental fatigue in aluminum-lithium alloys

    SciTech Connect

    Piascik, R.S.

    1992-07-01

    Aluminum-lithium alloys exhibit similar environmental fatigue crack growth characteristics compared to conventional 2000 series alloys and are more resistant to environmental fatigue compared to 7000 series alloys. The superior fatigue crack growth behavior of Al-Li alloys 2090, 2091, 8090, and 8091 is due to crack closure caused by tortuous crack path morphology and crack surface corrosion products. At high R and reduced closure, chemical environment effects are pronounced resulting in accelerated near threshold da/dN. The beneficial effects of crack closure are minimized for small cracks resulting in rapid growth rates. Limited data suggest that the 'chemically small crack' effect, observed in other alloy system, is not pronounced in Al-Li alloys. Modeling of environmental fatigue in Al-Li-Cu alloys related accelerated fatigue crack growth in moist air and salt water to hydrogen embrittlement.

  11. Passive Corrosion Behavior of Alloy 22

    SciTech Connect

    Rebak, R B; Payer, J H

    2006-01-10

    Alloy 22 (N06022) was designed to stand the most aggressive industrial applications, including both reducing and oxidizing acids. Even in the most aggressive environments, if the temperature is lower than 150 F (66 C) Alloy 22 would remain in the passive state having particularly low corrosion rates. In multi-ionic solutions that may simulate the behavior of concentrated ground water, even at near boiling temperatures, the corrosion rate of Alloy 22 is only a few nanometers per year because the alloy is in the complete passive state. The corrosion rate of passive Alloy 22 decreases as the time increases. Immersion corrosion testing also show that the newer generation of Ni-Cr-Mo alloys may offer a better corrosion resistance than Alloy 22 only in some highly aggressive conditions such as in hot acids.

  12. Passive Corrosion Behavior of Alloy 22

    SciTech Connect

    R.B. Rebak; J.H. Payer

    2006-01-20

    Alloy 22 (NO6022) was designed to stand the most aggressive industrial applications, including both reducing and oxidizing acids. Even in the most aggressive environments, if the temperature is lower than 150 F (66 C) Alloy 22 would remain in the passive state having particularly low corrosion rates. In multi-ionic solutions that may simulate the behavior of concentrated ground water, even at near boiling temperatures, the corrosion rate of Alloy 22 is only a few nano-meters per year because the alloy is in the complete passive state. The corrosion rate of passive Alloy 22 decreases as the time increases. Immersion corrosion testing also show that the newer generation of Ni-Cr-Mo alloys may offer a better corrosion resistance than Alloy 22 only in some highly aggressive conditions such as in hot acids.

  13. Introduction to hydrogen in alloys

    SciTech Connect

    Westlake, D.G.

    1980-01-01

    Substitutional alloys, both those that form hydrides and those that do not, are discussed, but with more emphasis on the former than the latter. This overview includes the following closely related subjects: (1) the significant effects of substitutional solutes on the pressure-composition-temperature (PCT) equilibria of metal-hydrogen systems, (2) the changes in thermodynamic properties resulting from differences in atom size and from modifications of electronic structure, (3) attractive and repulsive interactions between H and solute atoms and the effects of such interactions on the pressure dependent solubility for H, (4) H trapping in alloys of Group V metals and its effect on the terminal solubility for H (TSH), (5) some other mechanisms invoked to explain the enhancement (due to alloying) of the (TSH) in Group V metals, and (6) H-impurity complexes in alloys of the metals Ni, Co, and Fe. Some results showing that an enhanced TSH may ameliorate the resistance of a metal to hydrogen embrittlement are presented.

  14. Gold color in dental alloys.

    PubMed

    Cameron, T

    1997-01-01

    This article will help the dental laboratory with alloy selection by exploring how the relationship among color, ductility and strength applies to gold and how color can be quantified. Because higher quality materials translate into higher profits, upselling to the dentist and patient is also discussed.

  15. Recent developments in light alloys

    NASA Technical Reports Server (NTRS)

    Woodward, R W

    1920-01-01

    This report is intended to cover the progress that has been made in both the manufacture and utility of light alloys in the United States since the first part of 1919. Duralumin is extensively discussed both as to manufacture and durability.

  16. Microstructure modelling of industrial alloys

    NASA Astrophysics Data System (ADS)

    Herlach, Dieter M.; Gandin, Charles-André; Garcia-Escorial, Asuncion; Henein, Hani; Grün, Gerd-Ulrich; Schneider, Marc; Guédou, Jean-Yves; Kieft, René; Grellier, André

    2005-10-01

    Solidification of alloys is a complex phenomenon arising in many modern experimental techniques and industrial technologies involving casting and surface processing. Deep undercooling of alloys below equilibrium liquidus temperature results in rapid solidification, yielding materials with improved mechanical, magnetic and electrical properties. This MAP project is focusing on the long-term perspective for industrial materials such as Ni- and Al-based alloys. Ni-based multicomponent superalloys are the basis material for the production of, for example, turbine blades; Al-based alloys are highly important for the aerospace and automotive industries. More than 90% of all metallic materials are now produced from the liquid state. So far, efforts have been directed towards optimising the industrial production routes in the casting and foundry industry by computer-assisted modelling and simulation of solidification under different conditions. The goal has been to reduce the time- and energy-consuming treatment of the cast material in order to produce a material with the desired properties.

  17. Structural Properties of Mismatched Alloys

    NASA Astrophysics Data System (ADS)

    Mousseau, Normand

    The problem of understanding the local structure of disordered alloys has been around for a long time. In this thesis, I look more specifically at the effect of size-mismatch disorder in binary alloys under many forms: metallic and semiconductor alloys, bulk and surfaces, two and three dimensional systems. I have studied the limitations of a central-force model (CFM) and an embedded-atom potential (EAM) in describing the local structure of binary metallic alloys composed of Ag, Au, Cu, Ni, Pd, or Pt. Although an analytical model developed using the CFM explains qualitatively well the experimental and numerical results, in many cases, it is important to add electronic density effects through a more sophisticated potential like EAM in order to agree quantitatively with experiment. I have also looked at amorphous and crystalline silicon-germanium alloys. It turns out that the effect of size-mismatch is the same on a crystalline and an amorphous lattice. In the latter case, it can be seen as a perturbation of the much larger disorder due to the amorphisation process. However, the analytical predictions differ, for both the crystalline and amorphous alloys, from the experimental results. If one is to believe the data, there is only one possible explanation for this inconsistency: large amounts of hydrogen are present in the samples used for the measurements. Since the data analysis of EXAFS results is not always straightforward, I have proposed some experiments that could shed light on this problem. One of these experiments would be to look at the (111) surface of a Si-Ge alloy with a scanning tunneling microscope. I also present in this thesis the theoretical predictions for the height distribution at the surface as well as some more general structural information about the relaxation in the network as one goes away from the surface. Finally, I have studied the effect of size -mismatch in a purely two dimensional lattice, looking for mismatch-driven phase transitions

  18. Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab

    NASA Astrophysics Data System (ADS)

    Sánchez-Cano, R.; Porras-Montenegro, N.

    2016-04-01

    We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III-V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150-400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum (Q = 7000) is reached at T = 350 hbox {K}, but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at T = 350 hbox {K}.

  19. Using Amorphous Phases in the Design of Structural Alloys

    NASA Astrophysics Data System (ADS)

    Schwarz, R. B.; Nash, P.

    1989-01-01

    The recent discovery that amorphous alloy powders can be prepared by mechanically alloying a mixture of pure crystalline intermetallics is opening new windows to the synthesis of engineering materials. Amorphous powders synthesized by mechanical alloying may find application in the design of structural alloys, high thermal conductivity alloys, and metal-matrix composites.

  20. Study of the Local Structure of II-Vi Ternary Alloys by Extended X-Ray Absorption Fine Structure

    NASA Astrophysics Data System (ADS)

    Pong, Way-Faung

    Bondlengths, Debye-Waller factors, and site occupancy in the diluted magnetic semiconductors Zn_ {rm 1 - x}Mn_{ rm x}Se and Hg_{ rm 1 - x}Mn_{rm x}Te, and the narrow-gap semiconductor Hg _{rm 1 - x}Cd _{rm x}Te have been measured using extended x-ray absorption fine structure (EXAFS). The nearest-neighbor bond lengths in all of these alloys are found to be constant as a function of alloy composition within the experimental uncertainty of 0.01A. Because the average cation-cation distance changes with Mn composition, these results necessarily imply distortion of the tetrahedral bond angles. In the case of Zn_{rm 1 - x}Mn_{rm x} Se, the anion sublattice is shown to suffer the largest distortion, but the cation sublattice also exhibits some relaxation. The repercussions of these results are discussed, in terms of the amount of cation and anion sublattice distortion at low temperature and its connection to the superexchange mechanism occurring between the Mn ^{+2} ions and mediated by the intervening anion in Zn_{rm 1 - x}Mn_{rm x} Se. From the NN bond length relaxation results shown in this study and those reported elsewhere for the III -V-based and II-VI-based ternary compounds and DMS alloys, it appears that substitution of Mn^{+2 } ions into II-VI-based compounds causes greater local distortion, in general, than otherwise observed when group II cations are substituted for one another. We believe that the tetrahedral bond weakening in DMS is due to MN 3d-orbital (t_2) and anion p-orbital hybridization in DMS, leaving fewer p-orbitals available for tetrahedral bonding. This leads to the weakening of the bond force constants alpha, beta, as well as the bond becoming more ionic as Mn^{+2} is substituted into the II-VI-based compounds. Finally, the experimentally extended electron energy loss fine structure (EXELFS) technique, with modulations in the differential inelastic electron scattering cross -section above an absorption core edge, has been used in recent years to

  1. Method of producing superplastic alloys and superplastic alloys produced by the method

    NASA Technical Reports Server (NTRS)

    Troeger, Lillianne P. (Inventor); Starke, Jr., Edgar A. (Inventor); Crooks, Roy (Inventor)

    2002-01-01

    A method for producing new superplastic alloys by inducing in an alloy the formation of precipitates having a sufficient size and homogeneous distribution that a sufficiently refined grain structure to produce superplasticity is obtained after subsequent PSN processing. An age-hardenable alloy having at least one dispersoid phase is selected for processing. The alloy is solution heat-treated and cooled to form a supersaturated solid solution. The alloy is plastically deformed sufficiently to form a high-energy defect structure useful for the subsequent heterogeneous nucleation of precipitates. The alloy is then aged, preferably by a multi-stage low and high temperature process, and precipitates are formed at the defect sites. The alloy then is subjected to a PSN process comprising plastically deforming the alloy to provide sufficient strain energy in the alloy to ensure recrystallization, and statically recrystallizing the alloy. A grain structure exhibiting new, fine, equiaxed and uniform grains is produced in the alloy. An exemplary 6xxx alloy of the type capable of being produced by the present invention, and which is useful for aerospace, automotive and other applications, is disclosed and claimed. The process is also suitable for processing any age-hardenable aluminum or other alloy.

  2. Nickel-base alloys combat corrosion

    SciTech Connect

    Agarwal, D.C.; Herda, W.

    1995-06-01

    The modern chemical process industry must increase production efficiency to remain competitive. Manufacturers typically meet this challenge by utilizing higher temperatures and pressures, and more-corrosive catalysts. At the same time, the industry has to solve the technical and commercial problems resulting from rigid environmental regulations. To overcome these obstacles, new alloys having higher levels of corrosion resistance have been developed. These materials are based on increased understanding of the physical metallurgy of nickel-base alloys, especially the role of alloying elements. Results of many studies have led to innovations in nickel-chromium-molybdenum alloys containing both high and low amounts of nickel. Higher molybdenum and chromium contents, together with nitrogen additions, have opened up an entirely new class of alloys having unique properties. In addition, a new chromium-base, fully wrought super stainless steel shows excellent promise in solving many corrosion problems. These newer alloys have the ability to combat uniform corrosion, localized corrosion, and stress-corrosion cracking in the harsh halogenic environment of the chemical process industry. This article briefly lists some of the major highlights and corrosion data on recent nickel-chromium-molybdenum and nickel-molybdenum alloys, and the development of a chromium-base, wrought super-austenitic alloy known as Nicrofer 3033 (Alloy 33). Some comparisons with existing alloys are presented, along with a few commercial applications.

  3. Alloy substantially free of dendrites and method of forming the same

    DOEpatents

    de Figueredo, Anacleto M.; Apelian, Diran; Findon, Matt M.; Saddock, Nicholas

    2009-04-07

    Described herein are alloys substantially free of dendrites. A method includes forming an alloy substantially free of dendrites. A superheated alloy is cooled to form a nucleated alloy. The temperature of the nucleated alloy is controlled to prevent the nuclei from melting. The nucleated alloy is mixed to distribute the nuclei throughout the alloy. The nucleated alloy is cooled with nuclei distributed throughout.

  4. Status of Testing and Characterization of CMS Alloy 617 and Alloy 230

    SciTech Connect

    Ren, Weiju; Santella, Michael L; Battiste, Rick; Terry, Totemeier; Denis, Clark

    2006-08-01

    Status and progress in testing and characterizing CMS Alloy 617 and Alloy 230 tasks in FY06 at ORNL and INL are described. ORNL research has focused on CMS Alloy 617 development and creep and tensile properties of both alloys. In addition to refurbishing facilities to conduct tests, a significant amount of creep and tensile data on Alloy 230, worth several years of research funds and time, has been located and collected from private enterprise. INL research has focused on the creep-fatigue behavior of standard chemistry Alloy 617 base metal and fusion weldments. Creep-fatigue tests have been performed in air, vacuum, and purified Ar environments at 800 and 1000 C. Initial characterization and high-temperature joining work has also been performed on Alloy 230 and CCA Alloy 617 in preparation for creep-fatigue testing.

  5. Micro-Structures of Hard Coatings Deposited on Titanium Alloys by Laser Alloying Technique

    NASA Astrophysics Data System (ADS)

    Li, Wei; Yu, Huijun; Chen, Chuanzhong; Wang, Diangang; Weng, Fei

    2013-02-01

    This work is based on micro-structural performance of the Ti-B4C-C laser alloying coatings on Ti-6Al-4V titanium alloy. The test results indicated that laser alloying of the Ti-B4C-C pre-placed powders on the Ti-6Al-4V alloy substrate can form the ceramics reinforced hard alloying coatings, which increased the micro-hardness and wear resistance of substrate. The test result also indicated that the TiB phase was produced in alloying coating, which corresponded to its (101) crystal plane. In addition, yttria has a refining effect on micro-structures of the laser alloying coating, and its refinement mechanism was analyzed. This research provided essential experimental and theoretical basis to promote the applications of the laser alloying technique in manufacturing and repairing of the aerospace parts.

  6. First principles theory of disordered alloys and alloy phase stability

    SciTech Connect

    Stocks, G.M.; Nicholson, D.M.C.; Shelton, W.A.

    1993-06-05

    These lecture notes review the LDA-KKR-CPA method for treating the electronic structure and energetics of random alloys and the MF-CF and GPM theories of ordering and phase stability built on the LDA- KKR-CPA description of the disordered phase. Section 2 lays out the basic LDA-KKR-CPA theory of random alloys and some applications. Section 3 reviews the progress made in understanding specific ordering phenomena in binary solid solutions base on the MF-CF and GPM theories of ordering and phase stability. Examples are Fermi surface nesting, band filling, off diagonal randomness, charge transfer, size difference or local strain fluctuations, magnetic effects; in each case, an attempt is made to link the ordering and the underlying electronic structure of the disordered phase. Section 4 reviews calculations of electronic structure of {beta}-phase Ni{sub c}Al{sub 1-c} alloys using a version of the LDA-KKR-CPA codes generalized to complex lattices.

  7. Corrosion behavior and fatigue of alloy 625, alloy 33 and alloy 31 under conditions of decouplers in automotive exhaust systems

    SciTech Connect

    Agarwal, D.C.; Kloewer, J.; Koehler, M.; Kolb-Telieps, A.

    1998-12-31

    The alloys 625, 31, 33 and in some tests the newly developed alloy 626Si have been investigated with respect to their mechanical properties and their corrosion resistance against alkali salts containing chlorides at temperatures of 550 C, 65O C, 7OO C and 750 C. Concerning strength in the sensitized condition, all alloys are suitable as decoupler materials. The mechanical properties of alloys 625, 626Si and probably 31 indicate adequate manufacturing possibilities of bellows. All alloys investigated suffer accelerated corrosion in the presence of alkali salt containing chlorides at temperatures ranging from 550 C to 750 C. At 750 C alloy 626Si shows the lowest corrosion rate. At 75O C, 7OO C and 650 C no difference between the solution annealed and the sensitized specimens was found. At 55O C, however, the corrosion rate of the alloys 625 and 33 increased significantly, when the material was sensitized prior to corrosion testing. Alloy 31 does not suffer significant corrosion attack at 55O C both in the solution annealed and in the sensitized condition, thus making it a potential cost effective alternative to the more expensive alloy 625 for decoupler applications.

  8. Copper and nickel adherently electroplated on titanium alloy

    NASA Technical Reports Server (NTRS)

    Brown, E. E.

    1967-01-01

    Anodic treatment of titanium alloy enables electroplating of tightly adherent coatings of copper and nickel on the alloy. The alloy is treated in a solution of hydrofluoric and acetic acids, followed by the electroplating process.

  9. Wetting behavior of alternative solder alloys

    SciTech Connect

    Hosking, F.M.; Vianco, P.T.; Hernandez, C.L.; Rejent, J.A.

    1993-07-01

    Recent economic and environmental issues have stimulated interest in solder alloys other than the traditional Sn-Pb eutectic or near eutectic composition. Preliminary evaluations suggest that several of these alloys approach the baseline properties (wetting, mechanical, thermal, and electrical) of the Sn-Pb solders. Final alloy acceptance will require major revisions to existing industrial and military soldering specifications. Bulk alloy and solder joint properties are consequently being investigated to validate their producibility and reliability. The work reported in this paper examines the wetting behavior of several of the more promising commercial alloys on copper substrates. Solder wettability was determined by the meniscometer and wetting balance techniques. The wetting results suggest that several of the alternative solders would satisfy pretinning and surface mount soldering applications. Their use on plated through hole technology might be more difficult since the alloys generally did not spread or flow as well as the 60Sn-40Pb solder.

  10. Annealing behavior of high permeability amorphous alloys

    SciTech Connect

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co/sub 71/ /sub 4/Fe/sub 4/ /sub 6/Si/sub 9/ /sub 6/B/sub 14/ /sub 4/ were investigated. Annealing this alloy below 400/sup 0/C results in magnetic hardening; annealing above 400/sup 0/C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation.

  11. Nickel aluminide alloy suitable for structural applications

    DOEpatents

    Liu, Chain T.

    1998-01-01

    Alloys for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1.+-.0.8%)Al--(1.0.+-.0.8%)Mo--(0.7.+-.0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques.

  12. Nickel aluminide alloy suitable for structural applications

    DOEpatents

    Liu, C.T.

    1998-03-10

    Alloys are disclosed for use in structural applications based upon NiAl to which are added selected elements to enhance room temperature ductility and high temperature strength. Specifically, small additions of molybdenum produce a beneficial alloy, while further additions of boron, carbon, iron, niobium, tantalum, zirconium and hafnium further improve performance of alloys at both room temperature and high temperatures. A preferred alloy system composition is Ni--(49.1{+-}0.8%)Al--(1.0{+-}0.8%)Mo--(0.7 + 0.5%)Nb/Ta/Zr/Hf--(nearly zero to 0.03%)B/C, where the % is at. % in each of the concentrations. All alloys demonstrated good oxidation resistance at the elevated temperatures. The alloys can be fabricated into components using conventional techniques. 4 figs.

  13. [Biocompatibility of precious metal dental alloys].

    PubMed

    Reuling, N; Pohl-Reuling, B; Keil, M

    1991-03-01

    The local toxicity of three dental gold alloys was examined by help of intramuscular implantation tests in rabbits. For each alloy implantation periods of 1, 2, 4, 8, and 12 weeks were used. The local tissue reactions (foreign body reactions) were judged and graded by use of quantitative histomorphometry. Furthermore specific cellular parameters were examined with semiquantitative histopathologic methods to get an toxicity index for each material. The local tissue reactions caused by the implanted dental alloys were judged in relation to those, caused by biological inert materials (titanium, aluminum-oxide-ceramics) respectively materials with well-known toxic potential (polyvinyl-chloride with toxic aids), after intramuscular implantation in the same animals. Significant differences were found in the tissue reactions caused by the dental gold alloys; an gold alloy with lower noble metal content elicited stronger tissue reactions than both gold alloys with high noble metal content did. PMID:1872036

  14. Biocorrosion study of titanium-nickel alloys.

    PubMed

    Chern Lin, J H; Lo, S J; Ju, C P

    1996-02-01

    The present study provides results of the corrosion behaviour in Hank's physiological solution and some other properties of three Ti-Ni alloys with 18, 25 and 28.4 wt% Ni, respectively. Results indicate that alpha-titanium and Ti2Ni were the two major phases in all three Ti-Ni alloys. The relative amount of the Ti2Ni phase increased with additional Ni content. Hardness of the Ti-Ni alloys also increased with added nickel content, ranging from 310 to 390 VHN, similar to the hardness of enamel. Melting temperatures of the Ti-Ni alloys were all lower than that of pure titanium by least 600 degrees C. The three Ti-Ni alloys behaved almost identically when potentiodynamically polarized in Hank's solution at 37 degrees C. The critical anodic current densities of the alloys were nearly 30 microA/cm2 and the breakdown potentials were all above 1100 mV (SCE).

  15. A lightweight shape-memory magnesium alloy

    NASA Astrophysics Data System (ADS)

    Ogawa, Yukiko; Ando, Daisuke; Sutou, Yuji; Koike, Junichi

    2016-07-01

    Shape-memory alloys (SMAs), which display shape recovery upon heating, as well as superelasticity, offer many technological advantages in various applications. Those distinctive behaviors have been observed in many polycrystalline alloy systems such as nickel titantium (TiNi)–, copper-, iron-, nickel-, cobalt-, and Ti-based alloys but not in lightweight alloys such as magnesium (Mg) and aluminum alloys. Here we present a Mg SMA showing superelasticity of 4.4% at –150°C and shape recovery upon heating. The shape-memory properties are caused by reversible martensitic transformation. This Mg alloy includes lightweight scandium, and its density is about 2 grams per cubic centimeter, which is one-third less than that of practical TiNi SMAs. This finding raises the potential for development and application of lightweight SMAs across a number of industries.

  16. Directionally solidified eutectic alloy gamma-beta

    NASA Technical Reports Server (NTRS)

    Tewari, S. N.

    1977-01-01

    A pseudobinary eutectic alloy composition was determined by a previously developed bleed-out technique. The directionally solidified eutectic alloy with a composition of Ni-37.4Fe-10.0Cr-9.6Al (in wt%) had tensile strengths decreasing from 1,090 MPa at room temperature to 54 MPa at 1,100 C. The low density, excellent microstructural stability, and oxidation resistance of the alloy during thermal cycling suggest that it might have applicability as a gas turbine vane alloy while its relatively low high temperature strength precludes its use as a blade alloy. A zirconium addition increased the 750 C strength, and a tungsten addition was ineffective. The gamma=beta eutectic alloys appeared to obey a normal freezing relation.

  17. Alloy Effects on the Gas Nitriding Process

    NASA Astrophysics Data System (ADS)

    Yang, M.; Sisson, R. D.

    2014-12-01

    Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

  18. A lightweight shape-memory magnesium alloy.

    PubMed

    Ogawa, Yukiko; Ando, Daisuke; Sutou, Yuji; Koike, Junichi

    2016-07-22

    Shape-memory alloys (SMAs), which display shape recovery upon heating, as well as superelasticity, offer many technological advantages in various applications. Those distinctive behaviors have been observed in many polycrystalline alloy systems such as nickel titantium (TiNi)-, copper-, iron-, nickel-, cobalt-, and Ti-based alloys but not in lightweight alloys such as magnesium (Mg) and aluminum alloys. Here we present a Mg SMA showing superelasticity of 4.4% at -150°C and shape recovery upon heating. The shape-memory properties are caused by reversible martensitic transformation. This Mg alloy includes lightweight scandium, and its density is about 2 grams per cubic centimeter, which is one-third less than that of practical TiNi SMAs. This finding raises the potential for development and application of lightweight SMAs across a number of industries. PMID:27463668

  19. A lightweight shape-memory magnesium alloy

    NASA Astrophysics Data System (ADS)

    Ogawa, Yukiko; Ando, Daisuke; Sutou, Yuji; Koike, Junichi

    2016-07-01

    Shape-memory alloys (SMAs), which display shape recovery upon heating, as well as superelasticity, offer many technological advantages in various applications. Those distinctive behaviors have been observed in many polycrystalline alloy systems such as nickel titantium (TiNi)-, copper-, iron-, nickel-, cobalt-, and Ti-based alloys but not in lightweight alloys such as magnesium (Mg) and aluminum alloys. Here we present a Mg SMA showing superelasticity of 4.4% at -150°C and shape recovery upon heating. The shape-memory properties are caused by reversible martensitic transformation. This Mg alloy includes lightweight scandium, and its density is about 2 grams per cubic centimeter, which is one-third less than that of practical TiNi SMAs. This finding raises the potential for development and application of lightweight SMAs across a number of industries.

  20. Digital Alloy Absorber for Photodetectors

    NASA Technical Reports Server (NTRS)

    Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

    2016-01-01

    In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.