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Sample records for gd si planar

  1. A Comparative Study of the Electronic and Magnetic Properties of Gd5Ge4 and Gd5Si4 Compounds

    NASA Astrophysics Data System (ADS)

    Z. Momeni, Larimi; Amirabadizadeh, A.; Yazdani, A.; Arabi, H.

    2014-12-01

    We present a comparative study of electronic structure and magnetic properties of Gd5Si4 and Gd5Ge4 compounds using first principles full potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT) using the WIEN2k code. The local-spin density approximation with correlation energy (LSDA+U) method has been used as the exchange-correlation potential. The optimized lattice constants are in good agreement with the experimental data. The total and partial density of states (DOS) of Gd5Si4 and Gd5Ge4 show the difference in Si 3p-Gd 5d and Ge 4p-Gd 5d hybridization, which have an effective role in indirect exchange interaction. In addition, the magnetic moments of Gd, Si, and Ge atoms and the compounds are calculated to clarify the differences in the magnetic properties of these compounds.

  2. Ferromagnetism and re-entrant spin-glass transition in quasicrystal approximants Au-SM-Gd (SM = Si, Ge).

    PubMed

    Hiroto, T; Gebresenbut, G H; Pay Gómez, C; Muro, Y; Isobe, M; Ueda, Y; Tokiwa, K; Tamura, R

    2013-10-23

    Magnetic susceptibility and specific heat measurements on quasicrystalline approximants Au-Si-Gd and Au-Ge-Gd reveal that a ferromagnetic (FM) transition occurs at Tc = 22.5(5) K for Au-Si-Gd and at Tc = 13(1) K for Au-Ge-Gd, which are the first examples of ferromagnetism in crystalline approximants. In addition, a re-entrant spin-glass (RSG) transition is observed at TRSG = 3.3 K for Au-Ge-Gd in contrast to Au-Si-Gd. The different behaviors are understood based on the recent structural models reported by Gebresenbut et al (2013 J. Phys.: Condens. Matter 25 135402). The RSG transition in Au-Ge-Gd is attributed to a random occupation of the center of the Gd12 icosahedron by Gd atoms; a central Gd spin hinders the long-range FM order.

  3. Ferromagnetism and re-entrant spin-glass transition in quasicrystal approximants Au-SM-Gd (SM = Si, Ge)

    NASA Astrophysics Data System (ADS)

    Hiroto, T.; Gebresenbut, G. H.; Pay Gómez, C.; Muro, Y.; Isobe, M.; Ueda, Y.; Tokiwa, K.; Tamura, R.

    2013-10-01

    Magnetic susceptibility and specific heat measurements on quasicrystalline approximants Au-Si-Gd and Au-Ge-Gd reveal that a ferromagnetic (FM) transition occurs at Tc = 22.5(5) K for Au-Si-Gd and at Tc = 13(1) K for Au-Ge-Gd, which are the first examples of ferromagnetism in crystalline approximants. In addition, a re-entrant spin-glass (RSG) transition is observed at TRSG = 3.3 K for Au-Ge-Gd in contrast to Au-Si-Gd. The different behaviors are understood based on the recent structural models reported by Gebresenbut et al (2013 J. Phys.: Condens. Matter 25 135402). The RSG transition in Au-Ge-Gd is attributed to a random occupation of the center of the Gd12 icosahedron by Gd atoms; a central Gd spin hinders the long-range FM order.

  4. Superimposed grating wavelength division multiplexing in Ge-doped SiO2/Si planar waveguides

    NASA Astrophysics Data System (ADS)

    Othonos, Andreas; Bismuth, J.; Sweeny, M.; Kevorkian, Antoine P.; Xu, Jing Ming M.

    1998-02-01

    An improved model of wavelength division multiplexing (WDM) by superimposed gratings in planar waveguides has been developed. Based on this theory, principal design rules of N- channel WDM are established and a fanout capacity of 100 is estimated. Finally, four-channel WDM at 840 nm has been demonstrated on a Ge:SiO(subscript 2)/SiO(subscript 2)/Si planar waveguide, which was hydrogenated to enhance its photosensitivity. The superimposed gratings were written using a narrow linewidth KrF excimer laser in an interferometric setup used in inscribing fiber Bragg gratings.

  5. Crystal structure of the ternary silicide Gd2Re3Si5.

    PubMed

    Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

    2014-12-01

    A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å.

  6. Planar CMOS analog SiPMs: design, modeling, and characterization

    NASA Astrophysics Data System (ADS)

    Zou, Yu; Villa, Federica; Bronzi, Danilo; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2015-11-01

    Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 106, 13.2 × 106, and 15.0 × 106, respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing.

  7. Ultra-high quality factor planar Si3N4 ring resonators on Si substrates.

    PubMed

    Tien, Ming-Chun; Bauters, Jared F; Heck, Martijn J R; Spencer, Daryl T; Blumenthal, Daniel J; Bowers, John E

    2011-07-04

    We demonstrate planar Si3N4 ring resonators with ultra-high quality factors (Q) of 19 million, 28 million, and 7 million at 1060 nm, 1310 nm, and 1550 nm, respectively. By integrating the ultra-low-loss Si3N4 ring resonators with laterally offset planar waveguide directional couplers, optical add-drop and notch filters are demonstrated to have ultra-narrow bandwidths of 16 MHz, 38 MHz, and 300 MHz at 1060 nm, 1310 nm, and 1550 nm, respectively. These are the highest Qs reported for ring resonators with planar directional couplers, and ultra-narrowband microwave photonic filters can be realized based on these high-Q ring resonators.

  8. Gd-Si Oxide Nanoparticles as Contrast Agents in Magnetic Resonance Imaging

    PubMed Central

    Cabrera-García, Alejandro; Vidal-Moya, Alejandro; Bernabeu, Ángela; Pacheco-Torres, Jesús; Checa-Chavarria, Elisa; Fernández, Eduardo; Botella, Pablo

    2016-01-01

    We describe the synthesis, characterization and application as contrast agents in magnetic resonance imaging of a novel type of magnetic nanoparticle based on Gd-Si oxide, which presents high Gd3+ atom density. For this purpose, we have used a Prussian Blue analogue as the sacrificial template by reacting with soluble silicate, obtaining particles with nanorod morphology and of small size (75 nm). These nanoparticles present good biocompatibility and higher longitudinal and transversal relaxivity values than commercial Gd3+ solutions, which significantly improves the sensitivity of in vivo magnetic resonance images. PMID:28335240

  9. Effect of Milling Time on the Blocking Temperature of Nanoparticles of Magnetocaloric Gd5Si4

    NASA Astrophysics Data System (ADS)

    Hadimani, Ravi; Gupta, Shalbh; Harstad, Shane; Pecharsky, Vitalij; Jiles, David; David C Jiles Team; Vitalij Pecharsky Collaboration

    Extensive research has been done on giant magnetocaloric material Gd5(SixGe1-x)4 to improve adiabatic temperature/isothermal entropy change. However, there have been only a few reports on fabrication of nanostructure/nanoparticles that can be used to tune various properties by changing the length scale. Recently we have reported fabrication of room temperature ferromagnetic nanoparticles of Gd5Si4 using high energy ball milling. These nanoparticles have potential applications in biomedical engineering such as better T2 MRI contrast agents and in hypothermia. Here we report the effect of milling time on the blocking temperature, micro-structure, crystal structure, and magnetic properties of these nanoparticles. Magnetization vs. temperature at an applied field of 100 Oe is measured for all the ball milled samples. Bulk Gd5Si4 has a transition temperature of ~340 K. There are two phase transitions observed in the nanoparticles, one near 300 K corresponding to the Gd5Si4 phase and another between 75-150 K corresponding to Gd5Si3. Zero Field Cooling (ZFC) and Field Cooling (FC) were measured. The blocking temperatures for the nanoparticles increase with decrease in milling time.

  10. Luminescence and scintillation timing characteristics of (LuxGd2-x)SiO5:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Yawai, Nattasuda; Chewpraditkul, Warut; Sakthong, Ongsa; Chewpraditkul, Weerapong; Wantong, Kriangkrai; Szczesniak, Tomasz; Swiderski, Lukasz; Moszynski, Marek; Sidletskiy, Oleg

    2017-02-01

    The luminescence and scintillation characteristics of cerium-doped lutetium-gadolinium orthosilicate (LuxGd2-xSiO5:Ce; x=0, 0.8, 1.8) single crystals were investigated. At 662 keV γ-rays, the light yield of 29,800±3000 ph MeV-1 obtained for Lu1.8Gd0.2SiO5:Ce is higher than that of 20,200±2000 and 11,800±1200 ph MeV-1 obtained for Lu0.8Gd1.2SiO5:Ce and Gd2SiO5:Ce, respectively. The fast component decay time of 32, 18 and 17 ns was measured in the scintillation decay of Gd2SiO5:Ce, Lu0.8Gd1.2SiO5:Ce and Lu1.8Gd0.2SiO5:Ce, respectively. The coincidence time spectra for 511 keV annihilation quanta were measured in reference to a fast BaF2 detector and time resolution was discussed in terms of a number of photoelectrons and decay time of the fast component. The mass attenuation coefficient for studied crystals at 60 and 662 keV γ-rays was also evaluated and discussed.

  11. Enhancement of β-phase in PVDF films embedded with ferromagnetic Gd5Si4 nanoparticles for piezoelectric energy harvesting

    DOE PAGES

    Harstad, Shane; D’Souza, Noel; Soin, Navneet; ...

    2017-01-04

    Self-polarized Gd5Si4-polyvinylidene fluoride (PVDF) nanocomposite films have been synthesized via a facile phase-inversion technique. For the 5 wt% Gd5Si4-PVDF films, the enhancement of the piezoelectric β-phase and crystallinity are confirmed using Fourier transform infrared (FTIR) spectroscopy (phase fraction, FβFβ, of 81% as compared to 49% for pristine PVDF) and differential scanning calorimetry (crystallinity, ΔXcΔXc, of 58% as compared to 46% for pristine PVDF), respectively. The Gd5Si4 magnetic nanoparticles, prepared using high-energy ball milling were characterized using Dynamic Light Scattering and Vibrating Sample Magnetometry (VSM) to reveal a particle size of ~470 nm with a high magnetization of 11 emu/g. Themore » VSM analysis of free-standing Gd5Si4-PVDF films revealed that while the pristine PVDF membrane shows weak diamagnetic behavior, the Gd5Si4-PVDF films loaded at 2.5 wt% and 5 wt% Gd5Si4 show enhanced ferromagnetic behavior with paramagnetic contribution from Gd5Si3 phase. The interfacial interactions between Gd5Si4 and PVDF results in the preferential crystallization of the β-phase as confirmed via the shift in the CH2 asymmetric and symmetric stretching vibrations in the FTIR. These results confirm the magnetic Gd5Si4 nanoparticles embedded in the PVDF membrane lead to an increased β-phase fraction, which paves the way for future efficient energy harvesting applications using a combination of magnetic and piezoelectric effects.« less

  12. Crystallinity of Li-doped Gd2O3:Eu3+ thin-film phosphors grown on Si (100) substrate

    NASA Astrophysics Data System (ADS)

    Yi, Soung Soo; Bae, Jong Seong; Moon, Byung Kee; Jeong, Jung Hyun; Kim, Jung Hwan

    2005-02-01

    Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ luminescent thin films have been grown on Si (100) substrates using pulsed-laser deposition. The films grown at different deposition conditions show different microstructural and luminescent characteristics. Both cubic and monoclinic crystalline structures were observed in both Gd2O3:Eu3+ and Li-doped Gd2O3:Eu3+ films, but the cubic phase becomes more dominant and the ratio of peak values IC(222)/IM(-402) increases rapidly for Li-doped Gd2O3:Eu3+ films. The photoluminescence brightness data obtained from Li-doped Gd2O3:Eu3+ films indicate that Si (100) is a promising substrate for growth of high-quality Li-doped Gd2O3:Eu3+ thin-film red phosphor. In particular, the incorporation of Li + ions into the Gd2O3 lattice induced changes of crystallinity, surface roughness, and photoluminescence. The highest emission intensity was observed with Gd1.84Li0.08Eu0.08O3, whose brightness was a factor of 2.1 larger than that from Gd2O3:Eu3+ films. This phosphor is promising for applications in flat-panel displays.

  13. Temperature and Field Induced Strain Measurements in Single Crystal Gd5Si2Ge2

    NASA Astrophysics Data System (ADS)

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-06-01

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of -8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of -8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

  14. Electron spin resonance g shift in Gd{sub 5}Si{sub 4}, Gd{sub 5}Ge{sub 4}, and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}

    SciTech Connect

    Pires, M. J. M.; Mansanares, A. M.; Silva, E. C. da; Carvalho, A. Magnus G.; Gama, S.; Coelho, A. A.

    2006-04-01

    Gd{sub 5}Si{sub 4}, Gd{sub 5}Ge{sub 4}, and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88} compounds were studied by electron spin resonance. The arc-melted samples were initially characterized by optical metallography, x-ray diffraction, and static magnetization measurements. The electron spin resonance results show a negative paramagnetic g shift for Gd{sub 5}Si{sub 4} and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}, and a smaller positive one for Gd{sub 5}Ge{sub 4}. The values of the exchange parameter (j) between the localized Gd-4f spins and the conduction electrons are obtained from the g shifts. These values are positive and of the same order of magnitude for Gd{sub 5}Si{sub 4} and Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}, and negative one order of magnitude smaller for Gd{sub 5}Ge{sub 4}. The electron spin resonance data were interpreted considering the strongly bottlenecked solution of the coupled Bloch-Hasegawa equations.

  15. Electronic structure and spectral properties of RCuSi (R=Nd,Gd) compounds

    NASA Astrophysics Data System (ADS)

    Knyazev, Yu. V.; Lukoyanov, A. V.; Kuz'min, Yu. I.; Gupta, Sachin; Suresh, K. G.

    2016-04-01

    We report a joint experimental and theoretical investigation of optical properties and electronic structure of NdCuSi and GdCuSi compounds. Optical characteristics have been studied employing ellipsometry in a spectral range 0.22-15 μm. Spin-polarized calculations of the electronic structure have been performed using LSDA+U method accounting for electronic correlations in the 4f shell of rare earth elements. Additionally, we probe our electronic structures by calculating the interband optical conductivities and comparing them with spectral measurement. We find that all main features of the experimental curves have been qualitative interpreted using the calculated densities of states.

  16. Synthesis and characterization of SiO2/Gd2O3:Eu core-shell luminescent materials.

    PubMed

    Liu, Guixia; Hong, Guangyan; Sun, Duoxian

    2004-10-01

    Europium-doped Gd2O3 with an average size of approximately 15 nm was coated on the surface of preformed silica nanospheres by the wet chemical method. SEM and TEM photographs showed that SiO2/Gd2O3:Eu core-shell submicrospheres are obtained. XRD patterns indicated that the Gd2O3:Eu shell is crystalline after heat treatment. FTIR and XPS spectra showed that the Gd2O3:Eu shell is linked to the silica surface by forming a Si-O-Gd bond. Photoluminescence studies showed that the luminescent properties are still retained after coating on an inert silica core; additionally, we noted that the emitting peaks are broadened, which results from size effects and interface effects of nanocrystal.

  17. Preparation and effect of thermal treatment on Gd2O3:SiO2 nanocomposite

    NASA Astrophysics Data System (ADS)

    Ahlawat, Rachna

    2015-04-01

    Rare earth oxides have been extensively investigated due to their fascinating properties such as enhanced luminescence efficiency, lower lasing threshold, high-performance luminescent devices, drug-carrying vehicle, contrast agent in magnetic resonance imaging (MRI), up-conversion materials, catalysts and time-resolved fluorescence (TRF) labels for biological detection etc. Nanocomposites of silica gadolinium oxide have been successfully synthesized by sol-gel process using hydrochloric acid as a catalyst. Gd(NO3)3ṡ6H2O and tetraethyl orthosilicate (TEOS) were used as precursors to obtain powdered form of gadolinum oxide:silica (Gd2O3:SiO2) composite. The powdered samples having 2.8 mol% Gd2O3 were annealed at 500°C and 900°C temperature for 6 h and characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM). The effect of annealing on the phase evolution of the composite system has been discussed in detail. It was found that the sintering of gadolinium precursor plays a pivotal role to obtain crystalline phase of Gd2O3. Cubic phase of gadolinium oxide was developed for annealed sample at 900°C (6 h) with an average grain size 12 nm.

  18. Improved magneto-caloric effect of the Gd50Co50 metallic glass by minor Si addition

    NASA Astrophysics Data System (ADS)

    Tang, B. Z.; Yu, P.; Ding, D.; Wu, C.; Xia, L.

    2017-02-01

    In the present work, we studied the effect of minor Si addition on the magneto-caloric effect (MCE) of the Gd50Co50 metallic glass. The Gd50Co50-xSix (x=2, 5) as-spun ribbons show typical amorphous characteristics in structure and magneto-caloric behaviors. The peak values for the magnetic entropy change (-ΔSmpeak) of the Gd50Co50-xSix (x=0, 2, 5) metallic glasses increase significantly with the addition of Si. The mechanism for the enhanced MCE by minor addition of Si was investigated by revealing the relationship between -ΔSmpeak and the Curie temperature in the Gd-Co-based amorphous ribbons.

  19. Atomic configuration of irradiation-induced planar defects in 3C-SiC

    SciTech Connect

    Lin, Y. R.; Ho, C. Y.; Hsieh, C. Y.; Chang, M. T.; Lo, S. C.; Chen, F. R.; Kai, J. J.

    2014-03-24

    The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

  20. Investigation of room temperature ferromagnetic nanoparticles of Gd5Si4

    DOE PAGES

    Hadimani, R. L.; Gupta, S.; Harstad, S. M.; ...

    2015-07-06

    Gd5(SixGe1-x)4 compounds undergo first-order phase transitions close to room temperature when x ~ = 0.5, which are accompanied by extreme changes of properties. We report the fabrication of the nanoparticles of one of the parent compounds-Gd5Si4-using high-energy ball milling. Crystal structure, microstructure, and magnetic properties have been investigated. Particles agglomerate at long milling times, and the particles that are milled >20 min lose crystallinity and no longer undergo magnetic phase transition close to 340 K, which is present in a bulk material. The samples milled for >20 min exhibit a slightly increased coercivity. As a result, magnetization at a highmore » temperature of 275K decreases with the increase in the milling time.« less

  1. A current modulation in the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure as a mean to monitor oxygen vacancies

    SciTech Connect

    Sitaputra, Wattaka; Hudak, John A.; Tsu, Raphael

    2014-05-15

    The Gd{sub 2}O{sub 3} layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO{sub 2}/Si/SiO{sub 2} structure.

  2. Impacts of SiO2 planarization on optical thin film properties and laser damage resistance

    NASA Astrophysics Data System (ADS)

    Day, T.; Wang, H.; Jankowska, E.; Reagan, B. A.; Rocca, J. J.; Stolz, C. J.; Mirkarimi, P.; Folta, J.; Roehling, J.; Markosyan, A.; Route, R. R.; Fejer, M. M.; Menoni, C. S.

    2016-12-01

    Lawrence Livermore National Laboratory (LLNL) and Colorado State University (CSU) have co-developed a planarization process to smooth nodular defects. This process consists of individually depositing then etching tens of nanometers of SiO2 with a ratio of 2:1, respectively. Previous work shows incorporating the angular dependent ion surface etching and unidirectional deposition reduces substrate defect cross-sectional area by 90%. This work investigates the micro-structural and optical modifications of planarized SiO2 films deposited by ion beam sputtering (IBS). It is shown the planarized SiO2 thin films have 3x increase in absorption and 18% reduction in thin film stress as compared to control (as deposited) SiO2. Planarized SiO2 films exhibit 13% increase in RMS surface roughness with respect to the control and super polished fused silica substrates. Laser-induced damage threshold (LIDT) results indicate the planarization process has no effect on the onset fluence but alters the shape of the probability vs fluence trace.

  3. Atomically sharp 318 nm Gd:AlGaN ultraviolet light emitting diodes on Si with low threshold voltage

    NASA Astrophysics Data System (ADS)

    Kent, Thomas F.; Carnevale, Santino D.; Myers, Roberto C.

    2013-05-01

    Self-assembled AlxGa1-xN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd intra-f-shell electronic transitions at 313 nm and 318 nm is observed under forward biases above 5 V. The intensity of the Gd 4f EL scales linearly with current density and increases at lower temperature. The low field excitation of Gd 4f EL in PINLEDs is contrasted with high field excitation in metal/Gd:AlN/polarization-induced n-AlGaN devices; PINLED devices offer over a three fold enhancement in 4f EL intensity at a given device bias.

  4. Graphene as a transparent conducting and surface field layer in planar Si solar cells.

    PubMed

    Kumar, Rakesh; Mehta, Bodh R; Bhatnagar, Mehar; S, Ravi; Mahapatra, Silika; Salkalachen, Saji; Jhawar, Pratha

    2014-01-01

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene.

  5. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    PubMed

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  6. Method of making active magnetic refrigerant materials based on Gd-Si-Ge alloys

    DOEpatents

    Pecharsky, Alexandra O.; Gschneidner, Jr., Karl A.; Pecharsky, Vitalij K.

    2006-10-03

    An alloy made of heat treated material represented by Gd.sub.5(Si.sub.xGe.sub.1-x).sub.4 where 0.47.ltoreq.x.ltoreq.0.56 that exhibits a magnetic entropy change (-.DELTA.S.sub.m) of at least 16 J/kg K, a magnetostriction of at least 2000 parts per million, and a magnetoresistance of at least 5 percent at a temperature of about 300K and below, and method of heat treating the material between 800 to 1600 degrees C. for a time to this end.

  7. Gd-Si oxide mesoporous nanoparticles with pre-formed morphology prepared from a Prussian blue analogue template.

    PubMed

    Cabrera-García, Alejandro; Vidal-Moya, Alejandro; Bernabeu, Ángela; Sánchez-González, Javier; Fernández, Eduardo; Botella, Pablo

    2015-08-21

    A novel approach to the synthesis of Gd-Si oxide mesoporous nanoparticles with a high Gd(3+) atom density and pre-formed morphology is presented. Prussian blue analogue Gd(H2O)4[Fe(CN)6], a metal organic framework that crystallizes in the orthorhombic system, is used for the first time as a sacrificial template by a reaction with soluble silicate. Simultaneous and stoichiometric condensation of gadolinium hydroxide and silica takes place, leading to dense and monodispersed nanoparticles that preserve the original shape and size of the Prussian blue analogue crystals. Then, porosity is developed by incorporation of cetyltrimethylammonium bromide under hydrothermal conditions. The obtained Gd-Si mesoporous oxide particles present a dual morphology of nanocrosses and nanorods and large surface areas.

  8. Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates.

    PubMed

    Baeck, J H; Park, S A; Lee, W J; Jeong, I S; Jeong, K; Cho, M-H; Kim, Y K; Min, B G; Ko, D H

    2009-05-28

    Zr-incorporated Gd(2)O(3) films were grown on various substrates as a function of Zr content. The extent of interfacial reactions was found to be critically dependent on both the incorporated Zr content and the substrate type. Specifically, the silicide layer was suppressed and the Gd(2)O(3) phase was changed to ZrO(2) on a Si substrate with increasing Zr content. Crystalline Gd(2)Ge(2)O(7) was grown on a Ge substrate, as the result of interfacial reactions between Gd-oxide and the Ge substrate. However, interfacial reactions were not affected by the amount of Zr incorporated. On the SiGe/Si substrate, reactions between Gd-oxide and Si could be controlled effectively by the incorporation of Zr, while the extent of reactions with Ge was significantly enhanced as the Zr content increased. The formation of an interfacial layer between the film and the SiGe substrate resulted in a textured crystalline growth.

  9. The new ternary silicide Gd{sub 5}CoSi{sub 2}: Structural, magnetic and magnetocaloric properties

    SciTech Connect

    Mayer, Charlotte; Gaudin, Etienne; Gorsse, Stephane; Chevalier, Bernard

    2011-02-15

    Gd{sub 5}CoSi{sub 2} was prepared by annealing at 1003 K. Its investigation by the X-ray powder diffraction shows that the ternary silicide crystallizes in a tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type (I4/mcm space group; a=7.5799(4) and c=13.5091(12) A as unit cell parameters). The Rietveld refinement shows a mixed occupancy on the (8h) site between Si and Co atoms. Magnetization and specific heat measurements performed on Gd{sub 5}CoSi{sub 2} reveal a ferromagnetic behaviour below T{sub C}=168 K. This magnetic ordering is associated to an interesting magnetocaloric effect; the adiabatic temperature change {Delta}T{sub ad} is about 3.1 and 5.9 K, respectively, for a magnetic field change of 2 and 4.6 T. -- Graphical abstract: The adiabatic temperature change {Delta}T{sub ad} was determined by combining the heat capacity measurements and the magnetization data. As expected, a peak near the Curie temperature of the Gd{sub 5}CoSi{sub 2} ternary silicide is observed, with a maximum of {Delta}T{sub ad} around 3.1 and 5.9 K for {Delta}H=2 and 4.6 T, respectively. Display Omitted Research Highlights: {yields} We prepare and characterize for the first time the ternary silicide Gd{sub 5}CoSi{sub 2}. {yields} Gd{sub 5}CoSi{sub 2} crystallizes in the tetragonal structure deriving from the Cr{sub 5}B{sub 3}-type. {yields} Gd{sub 5}CoSi{sub 2} shows a ferromagnetic behaviour below 168 K associated with magnetocaloric properties.

  10. Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

    NASA Astrophysics Data System (ADS)

    Wang, H.; Huang, J. H.; Gong, X. H.; Chen, Y. J.; Lin, Y. F.; Luo, Z. D.; Huang, Y. D.

    2016-10-01

    An Er3+-doped Gd2SiO5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd-Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er3+-Yb3+ co-doped Gd2SiO5 crystal was evaluated.

  11. Forced Volume Magnetostriction in Composite Gd5Si2Ge2

    SciTech Connect

    Choe, W; McCall, S K; Radousky, H B; Nersessian, N; Or, S W; Carman, G P; Pecharsky, V K; Pecharsky, A O

    2004-04-01

    A -1200 ppm forced volume magnetostriction has been obtained in a [0-3], resin binder, Gd{sub 5}Si{sub 2}Ge{sub 2} particulate composite. The strain is a result of a magnetically induced phase transformation from a high volume (high temperature, low magnetic field) monoclinic phase to a low volume (low temperature, high magnetic field) orthorhombic phase. The particles used in the composite were ball-milled from a bulk sample and were sieved to obtain a size distribution of {approx}> 600 {micro}m. Bulk Gd{sub 5}Si{sub 2}Ge{sub 2} was manufactured via arc melting and subsequently annealed at 1300 C for 1 hour to produce a textured, polycrystalline sample. The transformation temperatures of the bulk sample, as measured using a Differential Scanning Calorimeter (DSC), were M{sub s}= -9.3 C, M{sub f}=-14.6 C, A{sub s}=-4.4 C, and A{sub f}=-1.2 C. The composite and the bulk samples were magnetically characterized using a SQUID magnetometer, and found to undergo a paramagnetic to ferromagnetic transition during the phase transformation, consistent with published results. The bulk sample was also found to possess a maximum linear magnetostriction -2500 ppm.

  12. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    DOE PAGES

    McCall, S. K.; Nersessian, N.; Carman, G. P.; ...

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore,more » using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.« less

  13. Magnetic ordering in Sc2CoSi2-type R2FeSi2 (R=Gd, Tb) and R2CoSi2 (R=Y, Gd-Er) compounds

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Pani, M.; Nirmala, R.; Quezado, S.; Malik, S. K.

    2016-09-01

    Magnetic and magnetocaloric properties of Sc2CoSi2-type R2TSi2 (R=Gd-Er, T=Fe, Co) compounds have been studied using magnetization data. These indicate the presence of mixed ferromagnetic and antiferromagnetic interactions in these compounds. One observes a ferromagnetic transition followed by an antiferromagnetic order and a further possible spin-reorientation transition at low temperatures. Compared to Gd2{Fe, Co}Si2, the Tb2FeSi2 and {Tb-Er}2CoSi2 compounds exhibit remarkable hysteresis (for e.g. Tb2FeSi2 shows residual magnetization Mres/Tb=2.45 μB, coercive field Hcoer=14.9 kOe, and critical field Hcrit 5 kOe at 5 K) possibly due to the magnetocrystalline anisotropy of the rare earth. The R2{Fe, Co}Si2 show relatively small magnetocaloric effect (i.e. isothermal magnetic entropy change, ΔSm) around the magnetic transition temperature: the maximal value of MCE is demonstrated by Ho2CoSi2 (ΔSm=-8.1 J/kg K at 72 K and ΔSm=-9.4 J/kg K at 23 K in field change of 50 kOe) and Er2CoSi2 (ΔSm=-13.6 J/kg K at 32 K and ΔSm=-8.4 J/kg K at 12 K in field change of 50 kOe).

  14. RNi8Si3 (R=Gd,Tb): Novel ternary ordered derivatives of the BaCd11 type

    NASA Astrophysics Data System (ADS)

    Pani, M.; Morozkin, A. V.; Yapaskurt, V. O.; Provino, A.; Manfrinetti, P.; Nirmala, R.; Malik, S. K.

    2016-01-01

    The title compounds have been synthesized and characterized both from the structural and magnetic point of view. Both crystallize in a new monoclinic structure strictly related to the tetragonal BaCd11 type. The structure was solved by means of X-ray single-crystal techniques for GdNi8Si3 and confirmed for TbNi8Si3 on powder data; the corresponding lattice parameters (obtained from Guinier powder patterns) are a=6.3259(2), b=13.7245(5), c=7.4949(3) Å, β=113.522(3)°, Vcell=596.64(3) Å3 and a=6.3200(2), b=13.6987(4), c=7.4923(2) Å, β=113.494(2)°, Vcell=594.88(2) Å3. The symmetry relationship between the tI48-I41/amd BaCd11 aristotype and the new ordered mS48-C2/c GdNi8Si3 derivative is described via the Bärnighausen formalism within the group theory. The large Gd-Gd (Tb-Tb) distances, mediated via Ni-Si network, likely lead to weak magnetic interactions. Low-field magnetization vs temperature measurements indicate weak and field-sensitive antiferromagnetic ground state, with ordering temperatures of 3 K in GdNi8Si3 and about 2-3 K in TbNi8Si3. On the other hand, the isothermal field-dependent magnetization data show the presence of competing interactions in both compounds, with a field-induced ferromagnetic behavior for GdNi8Si3 and a ferrimagnetic-like behavior in TbNi8Si3 at the ordering temperature TC/N of about (or slightly higher than) 3K. The magnetocaloric effect, quantified in terms of isothermal magnetic entropy change ΔSm, has the maximum values of -19.8 J(kg K)-1 (at 4 K for 140 kOe field change) and -12.1 J(kg K)-1 (at 12 K for 140 kOe field change) in GdNi8Si3 and TbNi8Si3, respectively.

  15. Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

    SciTech Connect

    Ishimaru, Dr. Manabu; Zhang, Yanwen; Shannon, Prof. Steven; Weber, William J

    2013-01-01

    We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at 111 and 111 planar defects. Radiationinduced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

  16. Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

    DOE PAGES

    Hadimani, R. L.; Melikhov, Y.; Schlagel, D. L.; ...

    2015-01-30

    Gd5(SixGe1–x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6. In this study, we have investigated the first order and second order phase transition temperatures of these samples using magnetic moment vs. temperature and magnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

  17. AC susceptibility, XRD and DSC studies of Sm 1- xGd xMn 2Si 2 silicides

    NASA Astrophysics Data System (ADS)

    Kervan, S.; Kılıc&,cedil; A.; Gencer, A.

    2004-02-01

    X-ray powder diffraction, AC susceptibility and differential scanning calorimetry (DSC) studies were performed on the polycrystalline Sm 1- xGd xMn 2Si 2 (0⩽ x⩽1) compounds. All compounds investigated crystallize in the body-centered tetragonal ThCr 2Si 2-type structure with the space group I4/mmm. Substitution of Gd for Sm leads to a linear decrease of the lattice constants and the unit cell volume. The lattice constants and the unit cell volume obey Vegard's law. At low temperatures, the rare earth sublattice orders and reconfigures the ordering in the Mn sublattice. The samples with x=0.6 and 0.8 exhibit spin reorientation phenomenon. The Néel temperature TN(Mn) determined by DSC technique and the Curie temperature TC (RE) increase linearly with increasing Gd content x. The results are summarized in the x- T magnetic phase diagram.

  18. Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

    DOEpatents

    Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

    2003-07-08

    Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

  19. Suppression of magnetostructural transition on GdSiGe thin film after thermal cyclings

    DOE PAGES

    Pires, A. L.; Belo, J. H.; Gomes, I. T.; ...

    2016-09-08

    The influence of thermal cycling on the microstructure, magnetic phase transition and magnetic entropy change of a Gd5Si1.3Ge2.7 thin film up to 1000 cycles is investigated. The authors found that after 1000 cycles a strong reduction of the crystallographic phase responsible for the magnetostructural transition (Orthorhombic II phase) occurs. We attribute this to the chemical disorder, caused by the large number of expansion/compression cycles that the Orthorhombic II phase undergoes across the magnetostructural transition. The suppression of the magnetostructural transition corresponds to a drastic decrease of the thin film magnetic entropy change. Our results reveal the importance of studying themore » thermal/magnetic cycles influence on magnetostructural transitions as they can damage a real-life device.« less

  20. Suppression of magnetostructural transition on GdSiGe thin film after thermal cyclings

    SciTech Connect

    Pires, A. L.; Belo, J. H.; Gomes, I. T.; Hadimani, R. L.; Schlagel, D. L.; Lograsso, T. A.; Jiles, D. C.; Lopes, A. M. L.; Araújo, J. P.; Pereira, A. M.

    2016-09-08

    The influence of thermal cycling on the microstructure, magnetic phase transition and magnetic entropy change of a Gd5Si1.3Ge2.7 thin film up to 1000 cycles is investigated. The authors found that after 1000 cycles a strong reduction of the crystallographic phase responsible for the magnetostructural transition (Orthorhombic II phase) occurs. We attribute this to the chemical disorder, caused by the large number of expansion/compression cycles that the Orthorhombic II phase undergoes across the magnetostructural transition. The suppression of the magnetostructural transition corresponds to a drastic decrease of the thin film magnetic entropy change. Our results reveal the importance of studying the thermal/magnetic cycles influence on magnetostructural transitions as they can damage a real-life device.

  1. Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process

    DOEpatents

    Gschneidner, Jr., Karl A.; Pecharsky, Vitalij K.

    1998-04-28

    Active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing.

  2. Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process

    DOEpatents

    Gschneidner, K.A. Jr.; Pecharsky, V.K.

    1998-04-28

    Active magnetic regenerator and method using Gd{sub 5} (Si{sub x}Ge{sub 1{minus}x}){sub 4}, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd{sub 5} (Si{sub x} Ge{sub 1{minus}x}){sub 4}, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing. 27 figs.

  3. Remarkable rare-earth metal silicide oxides with planar Si6 rings.

    PubMed

    Wang, Limin; Tang, Zhongjia; Lorenz, Bernd; Guloy, Arnold M

    2008-08-27

    New rare-earth silicide oxides, La10Si8O3 (1) and Ce10Si8O3 (2), were synthesized through high-temperature reactions of the pure elements under controlled oxygen atmosphere conditions. The remarkable silicides crystallize in a unique crystal structure (space group P6/mmm; a = 10.975(3) A (La) and 10.844(1) A (Ce); c = 4.680(1) A (La) and 4.561(1) A (Ce)) that features a 3-D framework of corner-shared O-centered (La/Ce)6 octahedra, reminiscent of hexagonal tungsten bronzes, with planar Si6 rings enclosed within its hexagonal channels. Band structure calculations indicate the compounds are metallic, with optimized La-Si bonds, and a benzene-like [Si6]6- anion. Compound 1 exhibits temperature independent paramagnetism. Compound 2 exhibits Curie-Weiss paramagnetism, and an antiferromagnetic ordering below 7 K.

  4. Crystal growth and optical properties of Gd admixed Ce-doepd Lu2Si2O7 single crystals

    NASA Astrophysics Data System (ADS)

    Horiai, Takahiko; Kurosawa, Shunsuke; Murakami, Rikito; Yamaji, Akihiro; Shoji, Yasuhiro; Ohashi, Yuji; Pejchal, Jan; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

    2017-06-01

    Ce-doped Lu2Si2O7 scintillator contains radioactive isotope 176Lu which causes an unwanted intrinsic background signal. The development of scintillators with reduced Lu concentration were required in some applications. In this study, we developed the Gd admixed lutetium pyrosilicate, where the average ion radius at the rare earth site was similar to the Tm3+ ion radius, for which the RE2Si2O7 (RE=Tm, Yb, Lu) crystal structure is stable from room temperature to melting point. We have grown (Cex Lu1-x-y Gdy)2Si2O7 (x=0.01, y=0.00, 0.05, 0.10) single crystals. Their crystal systems were monoclinic with a space group C2/m. The absorption spectra revealed the energy transitions in Ce and Gd ions might be occurred. The light output was degraded and decay time was accelerated comparing the Gd 5% admixed sample with the Gd 10% one.

  5. Graphene as a transparent conducting and surface field layer in planar Si solar cells

    PubMed Central

    2014-01-01

    This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene. PMID:25114642

  6. Anomalous Hall effect in the prospective spintronic material Eu1-x Gd x O integrated with Si.

    PubMed

    Parfenov, Oleg E; Averyanov, Dmitry V; Tokmachev, Andrey M; Taldenkov, Alexander N; Storchak, Vyacheslav G

    2016-06-08

    Remarkable properties of EuO make it a versatile spintronic material. Despite numerous experimental and theoretical studies of EuO, little is known about the anomalous Hall effect in this ferromagnet. So far, the effect has not been observed in bulk EuO, though has been detected in EuO films with uncontrolled distribution of defects. In the present work doping is taken under control: epitaxial films of Gd-doped EuO are synthesized integrated with Si using molecular beam epitaxy and characterized with x-ray diffraction and magnetization measurements. Nanoscale transport studies reveal the anomalous Hall effect in the ferromagnetic region for samples with different Gd concentration. The saturated anomalous Hall effect conductivity value of 5.0 S·cm(-1) in Gd-doped EuO is more than an order of magnitude larger than those reported so far for Eu chalcogenides doped with anion vacancies.

  7. Sol-gel synthesis of Y xGd 2- xSiO 5:Eu 3+ phosphors derived from the in situ assembly of multicomponent hybrid precursors

    NASA Astrophysics Data System (ADS)

    Huang, Honghua; Yan, Bing

    2006-04-01

    Using rare earth coordination polymers with salicylic acid as precursors for the luminescence species Y xGd 2- xSiO 5:Eu 3+, composing the polyvinyl alcohol (PVA) as dispersing media, nanophosphors of Y xGd 2- xSiO 5:Eu 3+ ( x = 0.10, 0.25, 0.50, 0.75, 0.90) with different molar ratio of Y and Gd were synthesized by the sol-gel process. Both X-ray diffraction and scanning electronic microscope show that these materials have the nanometer size of 100-200 nm. These nanometer materials exhibit red emission at 612 nm. When x = 0.5, Y 0.5Gd 1.5SiO 5:Eu 3+ shows the strongest emission intensity comparing with other molar ratio of Y to Gd.

  8. X-ray photoelectron spectroscopy and diffraction investigation of a metal-oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)

    NASA Astrophysics Data System (ADS)

    Ferrah, D.; El Kazzi, M.; Niu, G.; Botella, C.; Penuelas, J.; Robach, Y.; Louahadj, L.; Bachelet, R.; Largeau, L.; Saint-Girons, G.; Liu, Q.; Vilquin, B.; Grenet, G.

    2015-04-01

    Platinum thin films deposited by physical vapor deposition (PVD) on Gd2O3/Si(111) templates are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray photoelectron diffraction (XPD). Both XRD and XPD give clear evidence that Gd2O3 grows (111)-oriented and single-domain on Si(111) with mirror epitaxial relationship viz., [1bar10] Gd2O3(111)//[11bar0] Si(111). On Gd2O3/Si(111), Pt is partially crystallized with (111) orientation. There are two epitaxial domains and a slightly visible (111) fiber texture. The in-plane relationships of these Pt(111) domains with Gd2O3(111) are a direct one: [11bar0] Pt(111)//[11bar0] Gd2O3(111) and a mirror one: [1bar10] Pt(111)//[11bar0] Gd2O3(111). XPS reveals that Pt4f exhibits a metallic behavior even for small amounts of Pt but very small chemical shifts suggest that Pt environment is different at the interface with Gd2O3. These XPS chemical shifts have been correlated with features in XPD azimuth curves, which could be related with the existence of hexagonal α-PtO2(0001)layer.

  9. SiO2 nanofluid planar jet impingement cooling on a convex heated plate

    NASA Astrophysics Data System (ADS)

    Asghari Lafmajani, Neda; Ebrahimi Bidhendi, Mahsa; Ashjaee, Mehdi

    2016-12-01

    The main objective of this paper is to investigate the heat transfer coefficient of a planar jet of SiO2 nanofluid that impinges vertically on the middle of a convex heated plate for cooling purposes. The planar jet issues from a rectangular slot nozzle. The convex aluminum plate has a thickness, width and length of 0.2, 40 and 130 mm, respectively, and is bent with a radius of 200 mm. A constant heat-flux condition is employed. 7 nm SiO2 particles are added to water to prepare the nanofluid with 0.1, 1 and 2 % (ml SiO2/ml H2O) concentrations. The tests are also performed at different Reynolds numbers from 1803 to 2782. Results indicate that adding the SiO2 nanoparticles can effectively increase both local and average heat transfer coefficients up to 39.37 and 32.78 %, respectively. These positive effects often are more pronounced with increasing Reynolds numbers. This enhancement increases with ascending the concentration of nanofluid, especially from 0.1 to 1 %.

  10. Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs

    SciTech Connect

    Wang, Zhiqiang; Chinthavali, Madhu Sudhan; Campbell, Steven L

    2016-01-01

    This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25 oC to 175 oC. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.

  11. Robust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2

    PubMed Central

    Güttler, M.; Generalov, A.; Otrokov, M. M.; Kummer, K.; Kliemt, K.; Fedorov, A.; Chikina, A.; Danzenbächer, S.; Schulz, S.; Chulkov, E. V.; Koroteev, Yu. M.; Caroca-Canales, N.; Shi, M.; Radovic, M.; Geibel, C.; Laubschat, C.; Dudin, P.; Kim, T. K.; Hoesch, M.; Krellner, C.; Vyalikh, D. V.

    2016-01-01

    Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reaching a maximum of ~70 meV. An abrupt increase of surface magnetization at around the same temperature suggests that the Dirac state contributes significantly to the magnetic properties at the Si surface. We also show the possibility to tune the properties of 2DESs by depositing alkali metal atoms. The unique temperature-dependent ferromagnetic properties of the Si-terminated surface in GdRh2Si2 could be exploited when combined with functional adlayers deposited on top for which novel phenomena related to magnetism can be anticipated. PMID:27052006

  12. Temperature dependence of Ce-doped (Gd0.6 La0.4)2Si2O7 scintillators

    NASA Astrophysics Data System (ADS)

    Horiai, Takahiko; Kurosawa, Shunsuke; Murakami, Rikito; Yamaji, Akihiro; Shoji, Yasuhiro; Ohashi, Yuji; Pejchal, Jan; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

    2017-03-01

    (Ce0.01 Gd0.59 La0.40)2Si2O7 single crystal (La40% sample) was grown by the micro-pulling-down method to study its scintillation properties and their temperature dependence. In addition, we investigated the relation between these properties and La concentration comparing the crystal with (Ce0.01 Gd0.90 La0.09)2Si2O7 (La9% sample). As results, the light output of the La40% sample at 25°C was similar to that of the La9% sample. On the other hand, the decay time of the La40% sample was slower than that of the La9% sample at 25°C. The light output of La40% sample had a small decrease rate at high temperature when compared with that of La9% sample.

  13. Investigation of room temperature ferromagnetic nanoparticles of Gd5Si4

    SciTech Connect

    Hadimani, R. L.; Gupta, S.; Harstad, S. M.; Pecharsky, V. K.; Jiles, D. C.

    2015-07-06

    Gd5(SixGe1-x)4 compounds undergo first-order phase transitions close to room temperature when x ~ = 0.5, which are accompanied by extreme changes of properties. We report the fabrication of the nanoparticles of one of the parent compounds-Gd5Si4-using high-energy ball milling. Crystal structure, microstructure, and magnetic properties have been investigated. Particles agglomerate at long milling times, and the particles that are milled >20 min lose crystallinity and no longer undergo magnetic phase transition close to 340 K, which is present in a bulk material. The samples milled for >20 min exhibit a slightly increased coercivity. As a result, magnetization at a high temperature of 275K decreases with the increase in the milling time.

  14. Defects in planar Si pn junctions studied with electrically detected magnetic resonance

    NASA Astrophysics Data System (ADS)

    Wimbauer, T.; Ito, K.; Mochizuki, Y.; Horikawa, M.; Kitano, T.; Brandt, M. S.; Stutzmann, M.

    2000-04-01

    We report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe Pb centers at the boundary to the LOCOS isolation and an isotropic Si dangling bond related signal which is assumed to be a consequence of ion implantation. The E'H center—a hydrogen-complexed oxygen vacancy in the SiO2 device isolation—is also detected via EDMR. The EDMR detection mechanism, which is based on resonant changes of the device current, restricts the detected oxide defects to those which are close to the interface.

  15. Synthesis, Crystal Structure, Magnetism, and Optical Properties of Gd 3[SiON 3]O—An Oxonitridosilicate Oxide with Noncondensed SiON 3 Tetrahedra

    NASA Astrophysics Data System (ADS)

    Höppe, Henning A.; Kotzyba, Gunter; Pöttgen, Rainer; Schnick, Wolfgang

    2002-09-01

    The novel oxonitridosilicate oxide (sion oxide) Gd 3[SiON 3]O was obtained by the reaction of gadolinium metal with its carbonate oxide and silicon diimide in a radiofrequency (r.f.) furnace at a temperature of 1400°C. The crystal structure of Gd 3[SiON 3]O ( I4/ mcm, a=649.1(2) pm, c=1078.8(6) pm, Z=4, R1=0.0411, w R2=0.0769, 405 F2 values, 19 parameters, 123 K) is isotypic with that of Ba 3[SiO 4]O and Cs 3[CoCl 4]Cl. It can be derived from the perovskite structure type by a hierarchical substitution: Ti 4+→O 2-, O 2-→Gd 3+, Ca 2+→[SiON 3] 7- resulting in the formation of large [OGd 6] 16+ octahedra, which are twisted by ξ=16.47(1)° around [001]. The low-temperature single-crystal data investigation led to a crystallographic splitting of the central O atom which could not be resolved at room temperature. The UV-Vis absorption spectra in reflection geometry of the yellow title compound revealed two overlaying broad bands, one peaking at almost the same wavelength as observed in gadolinium oxide (340 nm) and a second red-shifted band at approximately 400 nm indicating a strong influence of nitrogen on the ligand field splitting of the 5 d states of Gd 3+. Temperature-dependent magnetic susceptibility measurements of Gd 3[SiON 3]O show Curie-Weiss behavior from 2 to 300 K with an experimental magnetic moment of 7.68(5) μB/Gd, indicating trivalent gadolinium. There is no evidence for magnetic ordering down to 2 K. According to the paramagnetic Curie temperature of -7(1) K, the exchange between the gadolinium magnetic moments is supposed to be only weak. The vibrational spectroscopic data (IR and Raman) are reported.

  16. Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors

    NASA Astrophysics Data System (ADS)

    Kahraman, A.; Yilmaz, E.

    2017-10-01

    The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 °C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by 60Co gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 1011 cm-2 and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7±1.4 mV/Gy and 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.

  17. Solvothermal synthesis and luminescence properties of monodisperse Gd{sub 2}O{sub 3}:Eu{sup 3+} and Gd{sub 2}O{sub 3}:Eu{sup 3+}SiO{sub 2} nanospheres

    SciTech Connect

    Wang, Yu; Bai, Xue; Liu, Tong; Dong, Biao; Xu, Lin; Liu, Qiong; Song, Hongwei

    2010-12-15

    A series of uniform, monodispersed Gd(OH){sup 3}:Eu{sup 3+} nanospheres less than 100 nm were successfully synthesized with iron ions as catalyst and DMF as solvent under the solvothermal condition. Cetyltrimethyl ammonium bromide (CTAB) and Polyvinylpyrrolidone (PVP) were performed as co-surfactant during this facile procedure should be changed as A series of uniform, monodisperse Gd(OH){sup 3}:Eu{sup 3+} nanospheres less than 100 nm in diameter were successfully synthesized with solvothermal method. Iron ion was used as catalyst and Dimethylformamide (DMF) as solvent, Cetyltrimethyl Ammonium Bromide (CTAB) and Polyvinylpyrrolidone (PVP) were performed as surfactants. Further calcination process was applied to prepare Gd{sub 2}O{sub 3}:Eu{sup 3+} nanoshpheres during this facile procedure. -- Graphical abstract: Uniform and monodisperse Gd{sub 2}O{sub 3}:Eu{sup 3+} and Gd{sub 2}O{sub 3}:Eu{sup 3+}SiO{sub 2} monodisperse were synthesized by annealed relative parent's Gd(OH){sub 3}:Eu{sup 3+} and Gd(OH){sub 3}:Eu{sup 3+}SiO{sub 2}, respectively. Their morphology and luminescence properties all strongly depended on the iron concentration. Display Omitted

  18. Toxicity evaluation of Gd2O3@SiO2 nanoparticles prepared by laser ablation in liquid as MRI contrast agents in vivo

    PubMed Central

    Tian, Xiumei; Yang, Fanwen; Yang, Chuan; Peng, Ye; Chen, Dihu; Zhu, Jixiang; He, Fupo; Li, Li; Chen, Xiaoming

    2014-01-01

    Poor toxicity characterization is one obstacle to the clinical deployment of Gd2O3@ SiO2 core-shell nanoparticles (Gd-NPs) for use as magnetic resonance (MR) imaging contrast agents. To date, there is no systematic toxicity data available for Gd-NPs prepared by laser ablation in liquid. In this article, we systematically studied the Gd-NPs’ cytotoxicity, apoptosis in vitro, immunotoxicity, blood circulation half-life, biodistribution and excretion in vivo, as well as pharmacodynamics. The results show the toxicity, and in vivo MR data show that these NPs are a good contrast agent for preclinical applications. No significant differences were found in cell viability, apoptosis, and immunotoxicity between our Gd-NPs and Gd in a DTPA (diethylenetriaminepentaacetic acid) chelator. Biodistribution data reveal a greater accumulation of the Gd-NPs in the liver, spleen, lung, and tumor than in the kidney, heart, and brain. Approximately 50% of the Gd is excreted via the hepatobiliary system within 4 weeks. Furthermore, dynamic contrast-enhanced T1-weighted MR images of xenografted murine tumors were obtained after intravenous administration of the Gd-NPs. Collectively, the single step preparation of Gd-NPs by laser ablation in liquid produces particles with satisfactory cytotoxicity, minimal immunotoxicity, and efficient MR contrast. This may lead to their utility as molecular imaging contrast agents in MR imaging for cancer diagnosis. PMID:25187708

  19. Electrospun SiO2 "necklaces" on unglazed ceramic tiles: a planarizing strategy

    NASA Astrophysics Data System (ADS)

    Di Mauro, Alessandro; Fragalà, Maria Elena

    2015-05-01

    Silica based nanofibres have been deposited on unglazed ceramic tiles by combining electrospinning and sol-gel processes. Poly(vinyl pyrrolidone) (PVP) alcoholic solutions and commercial spin on glass (Accuglass) mixtures have been used to obtain composite fibrous non-woven mats totally converted, after thermal annealing at 600 °C, to SiO2 microsphere "necklaces". The possibility to get an uniform fibres coverage onto the tile surface confirms the validity of electrospinning (easily scalable to large surface samples) as coating strategy to cover the macroscopic defects typical of the polished unglazed tile surface and improve surface planarization.

  20. Growth and luminescent properties of Lu 2SiO 5:Ce and (Lu 1- xGd x) 2SiO 5:Ce single crystalline films

    NASA Astrophysics Data System (ADS)

    Zorenko, Yu.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Grinyov, B.; Sidletskiy, O.; Kurtsev, D.; Fedorov, A.; Baumer, V.; Nikl, M.; Mares, J. A.; Beitlerova, A.; Prusa, P.; Kucera, M.

    2011-12-01

    Single crystalline films (SCF) of Lu 2SiO 5:Ce (LSO:Ce), (Lu 1- xGd x) 2SiO 5:Ce (LGSO:Ce) and LGSO:Ce,Tb orthosilicates with thickness of 2.5-21 μm were crystallized by liquid phase epitaxy method onto undoped LSO substrates from melt-solution based on PbO-B 2O 3 flux. The concentration of Gd was varied in the range of x=0.2-0.7 formula units (f.u.). In the case of LGSO:Ce SCF growth we do not use any additional doping for reducing the misfit between the SCF and substrate lattices. The luminescence and scintillation properties of LSO:Ce, LGSO:Ce and LGSO:Ce,Tb SCFs were mutually compared and confronted with the performance of reference LSO:Ce and LYSO:Ce crystals. With increasing Gd content the luminescence spectrum of LGSO:Ce SCF is gradually red-shifted with respect to that of LSO:Ce SCF. The LY of (Lu 1- xGd x)SO:Ce SCF becomes lower in comparison with that for LSO:Ce SC at increasing Gd content in the range of x=0.2-0.7 f.u. The peculiarities of luminescence properties of LSO:Ce and LGSO:Ce SCFs in comparison with crystal analogs are explained by the different distribution of Ce 3+ over Lu1 and Lu2 positions of LSO host and by the influence of Pb 2+ contamination coming from the flux used for the film growth.

  1. Role of Ge in bridging ferromagnetism in the giant magnetocaloric Gd{sub 5}(Ge{sub 1-x}Si{sub x}){sub 4} alloys.

    SciTech Connect

    Haskel, D.; Lee, Y. B.; Harmon, B. N.; Islam, Z.; Lang, J. C.; Srajer, G.; Mudryk, Ya.; Gschneidner, K. A., Jr.; Pecharsky, V. K.; X-Ray Science Division; Iowa State Univ.

    2007-06-15

    X-ray magnetic circular dichroism (XMCD) measurements and density functional theory (DFT) are used to study the electronic conduction states in Gd{sub 5}(Ge{sub 1-x}Si{sub x}){sub 4} materials through the first-order bond-breaking magnetostructural transition responsible for their giant magnetocaloric effect. Spin-dependent hybridization between Ge 4p and Gd 5d conduction states, which XMCD senses through the induced magnetic polarization in Ge ions, enables long-range Ruderman-Kittel-Kasuya-Yosida ferromagnetic interactions between Gd 4f moments in adjacent Gd slabs connected by Ge(Si) bonds. These interactions are strong below but weaken above the Ge(Si) bond-breaking transition that destroys 3D ferromagnetic order.

  2. Spherical SiO2 @ GdPO4: Eu3+ core-shell phosphors: sol-gel synthesis and characterization.

    PubMed

    Lin, Cuikun; Zhao, Bo; Wang, Zhenling; Yu, Min; Wang, Huan; Kong, Deyan; Lin, Jun

    2007-02-01

    Nanocrystalline GdPO4 : Eu3+ phosphor layers were coated on non-aggregated, monodisperse and spherical SiO2 particles by Pechini sol-gel method, resulting in the formation of core-shell structured SiO2 @ GdPO4 : Eu3+ particles. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), photoluminescence (PL), low-voltage cathodoluminescence (CL), time-resolved PL spectra and lifetimes were used to characterize the core-shell structured materials. Both XRD and FT-IR results indicate that GdPO4 layers have been successfully coated on the SiO2 particles, which can be further verified by the images of FESEM and TEM. Under UV light excitation, the SiO2 @ GdPO4 : Eu3+ phosphors show orange-red luminescence with Eu3+ 5D0-7F1 (593 nm) as the most prominent group. The PL excitation and emission spectra suggest that an energy transfer occurs from Gd3+ to Eu3+ in SiO2 @ GdPO4 : Eu3+ phosphors. The obtained core-shell phosphors have potential applications in FED and PDP devices.

  3. Dielectric SiO2 Planarization Using MnO2 Slurry

    NASA Astrophysics Data System (ADS)

    Kishii, Sadahiro; Nakamura, Ko; Hanawa, Kenzo; Watanabe, Satoru; Arimoto, Yoshihiro; Kurokawa, Syuhei; Doi, Toshiro K.

    2012-01-01

    MnO2 slurry can polish SiO2 film faster and planarize wide feature steps (2 ×2 mm2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO2 abrasive directly reacts on the SiO2 film. In post-Chemical mechanical polishing (CMP), the MnO2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H2O2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H2O2.

  4. Gd5(Si,Ge)4 thin film displaying large magnetocaloric and strain effects due to magnetostructural transition

    NASA Astrophysics Data System (ADS)

    Hadimani, Ravi L.; Silva, Joao H. B.; Pereira, Andre M.; Schlagel, Devo L.; Lograsso, Thomas A.; Ren, Yang; Zhang, Xiaoyi; Jiles, David C.; Araújo, Joao P.

    2015-01-01

    Magnetic refrigeration based on the magnetocaloric effect is one of the best alternatives to compete with vapor-compression technology. Despite being already in its technology transfer stage, there is still room for optimization, namely, on the magnetic responses of the magnetocaloric material. In parallel, the demand for different magnetostrictive materials has been greatly enhanced due to the wide and innovative range of technologies that emerged in the last years (from structural evaluation to straintronics fields). In particular, the Gd5(SixGe1-x)4 compounds are a family of well-known alloys that present both giant magnetocaloric and colossal magnetostriction effects. Despite their remarkable properties, very few reports have been dedicated to the nanostructuring of these materials: here, we report a ˜800 nm Gd5Si2.7Ge1.3 thin film. The magnetic and structural investigation revealed that the film undergoes a first order magnetostructural transition and as a consequence exhibits large magnetocaloric effect (-ΔSmMAX ˜ 8.83 J kg-1 K-1, ΔH = 5T) and giant thermal expansion (12000 p.p.m). The thin film presents a broader magnetic response in comparison with the bulk compound, which results in a beneficial magnetic hysteresis reduction. The ΔSmMAX exhibited by the Gd5(Si,Ge)4 thin film makes it a promising candidate for micro/nano magnetic refrigeration area.

  5. GdRh2Si2 : An exemplary tetragonal system for antiferromagnetic order with weak in-plane anisotropy

    NASA Astrophysics Data System (ADS)

    Kliemt, K.; Hofmann-Kliemt, M.; Kummer, K.; Yakhou-Harris, F.; Krellner, C.; Geibel, C.

    2017-04-01

    The anisotropy of magnetic properties commonly is introduced in textbooks using the case of an antiferromagnetic system with Ising type anisotropy. This model presents huge anisotropic magnetization and a pronounced metamagnetic transition and is well-known and well-documented both in experiments and theory. In contrast, the case of an antiferromagnetic X -Y system with weak in-plane anisotropy is only poorly documented. We studied the anisotropic magnetization of the compound GdRh2Si2 and found that it is a perfect model system for such a weak-anisotropy setting because the Gd3 + ions in GdRh2Si2 have a pure spin moment of S =7 /2 , which orders in a simple AFM structure with Q =(001 ) . We observed experimentally in M (B ) a continuous spin-flop transition and domain effects for a field applied along the [100 ] and the [110 ] direction, respectively. We applied a mean-field model for the free energy to describe our data and combine it with an Ising chain model to account for domain effects. Our calculations reproduce the experimental data very well. In addition, we performed magnetic x-ray scattering and x-ray magnetic circular dichroism measurements, which confirm the AFM propagation vector to be Q =(001 ) and indicate the absence of polarization on the rhodium atoms.

  6. Low-temperature heat-capacity studies of R2Ni3Si5 (R=Pr, Nd, Sm, Gd, Tb, Dy, Ho)

    NASA Astrophysics Data System (ADS)

    Mazumdar, Chandan; Ghosh, K.; Nagarajan, R.; Ramakrishnan, S.; Padalia, B. D.; Gupta, L. C.

    1999-02-01

    We report here our low temperature (2-30 K) heat capacity, Cp measurements of R2Ni3Si5 (R=Pr, Nd, Sm, Gd-Ho). Large peaks in heat capacity data at magnetic transition temperatures (TN) confirm the bulk nature of magnetic order in these compounds. In Nd2Ni3Si5, Gd2Ni3Si5, and Dy2Ni3Si5, magnetization studies indicated only one magnetic transition, whereas, heat-capacity data show two transitions. TN of the heavier rare-earth member, Tb2Ni3Si5, showing significant deviation from de Gennes scaling is notable. Magnetic entropy, ΔS, estimated from heat-capacity data suggest that the magnetic ground state is a doublet in R2Ni3Si5 (R=Pr, Nd, Sm, Dy, Ho) and a quartet in Tb2Ni3Si5. In all the cases, ΔS, at TN is slightly less than that expected due to the suggested states, which we attribute to the occurrence of precursor effects of magnetic order above TN. Except for Gd2Ni3Si5, ΔS of the compounds does not reach the saturation limit of R ln(2J+1) even at 30 K, indicating the presence of crystalline electric field (CEF) effects. A hump in Cp is observed below TN in Gd2Ni3Si5 which is interpreted in terms of a possible amplitude-modulated magnetic spin structure.

  7. RNi{sub 8}Si{sub 3} (R=Gd,Tb): Novel ternary ordered derivatives of the BaCd{sub 11} type

    SciTech Connect

    Pani, M.; Morozkin, A.V.; Yapaskurt, V.O.; Provino, A.; Manfrinetti, P.; Nirmala, R.; Malik, S.K.

    2016-01-15

    The title compounds have been synthesized and characterized both from the structural and magnetic point of view. Both crystallize in a new monoclinic structure strictly related to the tetragonal BaCd{sub 11} type. The structure was solved by means of X-ray single-crystal techniques for GdNi{sub 8}Si{sub 3} and confirmed for TbNi{sub 8}Si{sub 3} on powder data; the corresponding lattice parameters (obtained from Guinier powder patterns) are a=6.3259(2), b=13.7245(5), c=7.4949(3) Å, β=113.522(3)°, V{sub cell}=596.64(3) Å{sup 3} and a=6.3200(2), b=13.6987(4), c=7.4923(2) Å, β=113.494(2)°, V{sub cell}=594.88(2) Å{sup 3}. The symmetry relationship between the tI48-I4{sub 1}/amd BaCd{sub 11} aristotype and the new ordered mS48-C2/c GdNi{sub 8}Si{sub 3} derivative is described via the Bärnighausen formalism within the group theory. The large Gd–Gd (Tb–Tb) distances, mediated via Ni–Si network, likely lead to weak magnetic interactions. Low-field magnetization vs temperature measurements indicate weak and field-sensitive antiferromagnetic ground state, with ordering temperatures of 3 K in GdNi{sub 8}Si{sub 3} and about 2–3 K in TbNi{sub 8}Si{sub 3}. On the other hand, the isothermal field-dependent magnetization data show the presence of competing interactions in both compounds, with a field-induced ferromagnetic behavior for GdNi{sub 8}Si{sub 3} and a ferrimagnetic-like behavior in TbNi{sub 8}Si{sub 3} at the ordering temperature T{sub C/N} of about (or slightly higher than) 3K. The magnetocaloric effect, quantified in terms of isothermal magnetic entropy change ΔS{sub m}, has the maximum values of –19.8 J(kg K){sup −1} (at 4 K for 140 kOe field change) and −12.1 J(kg K){sup −1} (at 12 K for 140 kOe field change) in GdNi{sub 8}Si{sub 3} and TbNi{sub 8}Si{sub 3}, respectively. - Graphical abstract: GdNi{sub 8}Si{sub 3} and TbNi{sub 8}Si{sub 3} compounds are isostructural, and crystallize in a new monoclinic type strictly related to the tetragonal

  8. High-removal selectivity through interaction between polyacrylamide and SiO2 film in poly isolation chemical mechanical planarization.

    PubMed

    Kim, Ye-Hwan; Lee, Kee-June; Park, Jea-Gun; Paik, Ungyu

    2009-06-01

    The interaction between polyacrylamide (PAM) and SiO2 film was investigated in order to elucidate the removal polycrystalline silicon (poly Si) to SiO2 selectivity in poly isolation chemical mechanical planarization (CMP). The hydrophilic characteristics of poly Si and SiO2 were analyzed by the X-ray photoelectron spectroscopy (XPS) and contact angle measurement. The surface of SiO2 is more hydrophilic than that of poly Si due to the siloxane (triple bond Si-O-Si triple bond) bonding. The adsorption behavior of PAM on poly Si and SiO2 film was determined by adsorption isotherms and force measurements using atomic force microscopy (AFM). Interaction between siloxane bonding of SiO2 film and the amine group along the backbone of PAM results in the adsorption of PAM on SiO2 film. Consequently, the passivation layer of PAM on the SiO2 film prevented abrasives from approaching the surface of SiO2 film, which led to suppression of the removal rate of SiO2 film from 82 to 12 A/min in poly isolation CMP process.

  9. Optical spectra and excited state relaxation dynamics of Sm3+ in Gd2SiO5 single crystal

    NASA Astrophysics Data System (ADS)

    Strzęp, A.; Lisiecki, R.; Solarz, P.; Dominiak-Dzik, G.; Ryba-Romanowski, W.; Berkowski, M.

    2012-01-01

    Single crystals of gadolinium orthosilicate Gd2SiO5 containing 0.5 at% and 5 at% of Sm3+ were grown by the Czochralski method. Optical absorption spectra, luminescence spectra and luminescence decay curves were recorded for these systems at 10 K and at room temperature. Comparison of optical spectra recorded in polarized light revealed that the anisotropy of this optically biaxial host affects the intensity distribution within absorption and emission bands related to transitions between multiplets rather than the overall band intensity. It has been found that among four bands of luminescence related to the 4G5/2→6HJ (J=5/2-11/2) transitions of Sm3+ in the visible and near infrared region the 4G5/2 →6H7/2 one has the highest intensity with a peak emission cross section of 3.54×10-21 cm2 at 601 nm for light polarized parallel to the crystallographic axis c of the crystal. The luminescence decay curve recorded for Gd2SiO5:0.5 at% Sm3+ follows a single exponential time dependence with a lifetime 1.74 ms, in good agreement with the 4G5/2 radiative lifetime τ rad=1.78 ms calculated in the framework of Judd-Ofelt theory. Considerably faster and non-exponential luminescence decay recorded for Gd2SiO5:5 at% Sm3+ sample was fitted to that predicted by the Inokuti-Hirayama theory yielding the microparameter of Sm3+-Sm3+ energy transfer C da=1.264×10-52 cm6×s-1. It is concluded that the system under study may be of interest as a VUV-UV excited visible phosphor or laser material operating in the yellow region of the spectrum.

  10. [Luminescence properties of Pr(3+) and energy transfer characteristics of Pr(3+)-->Gd(3+) in CaSiO3].

    PubMed

    Chu, Ben-li; Liu, Xing-ren; Wang, Xiao-jun; Zhang, Jia-hua; Jiang, Xue-yin

    2002-08-01

    The excitation spectrum and the emission spectrum of Pr3+ in CaSiO3 under the room temperature were studied. The emission spectrum was constituted of three emission bands, corresponding to the emissions of the lowest 4f5d states to the 3H4, 3H6, 1G4 of the 4f2 states. The emission of the 3P0 and 1D2 were not observed. The concentration quenching of Pr3+ was due to the radiative and nonradiative energy transfer. There was energy transfer from Pr3+ to Gd3+, with the transfer rate of 10% of the Pr3+ emission rate.

  11. Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

    NASA Astrophysics Data System (ADS)

    Roy Chaudhuri, Ayan; Fissel, A.; Osten, H. J.

    2013-05-01

    Dielectric properties of epitaxial Gd2O3 thin films grown on Si have been found to improve significantly by incorporation of suitable dopants. However, in order to achieve optimum electrical properties from such doped oxides, it is important to understand the correlation between doping and the electronic structure of the material. In the present article, we report about the effect of nitrogen doping on the electronic structure and room temperature dc leakage properties of epitaxial Gd2O3 thin films. Epitaxial Gd2O3:N thin films were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N2O as the nitridation agent. First investigations confirmed the presence of substitutional N in the Gd2O3:N layers. Incorporation of nitrogen did not affect the structural quality of the oxide layers. X ray photoelectron spectroscopy investigations revealed band gap narrowing in epitaxial Gd2O3 due to nitrogen doping, which leads to reduction in the valence band offset of the Gd2O3:N layers with Si. DC leakage current measured at room temperature revealed that despite reduction in the band gap and valence band offsets due to N doping, the Gd2O3:N layers remain sufficiently insulating. A significant reduction of the leakage current densities in the Gd2O3:N layers with increasing nitrogen content suggests that doping of epitaxial Gd2O3 thin films with nitrogen can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

  12. Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd{sub 2}O{sub 3} thin films on Si

    SciTech Connect

    Roy Chaudhuri, Ayan; Osten, H. J.; Fissel, A.

    2013-05-14

    Dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films grown on Si have been found to improve significantly by incorporation of suitable dopants. However, in order to achieve optimum electrical properties from such doped oxides, it is important to understand the correlation between doping and the electronic structure of the material. In the present article, we report about the effect of nitrogen doping on the electronic structure and room temperature dc leakage properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N{sub 2}O as the nitridation agent. First investigations confirmed the presence of substitutional N in the Gd{sub 2}O{sub 3}:N layers. Incorporation of nitrogen did not affect the structural quality of the oxide layers. X ray photoelectron spectroscopy investigations revealed band gap narrowing in epitaxial Gd{sub 2}O{sub 3} due to nitrogen doping, which leads to reduction in the valence band offset of the Gd{sub 2}O{sub 3}:N layers with Si. DC leakage current measured at room temperature revealed that despite reduction in the band gap and valence band offsets due to N doping, the Gd{sub 2}O{sub 3}:N layers remain sufficiently insulating. A significant reduction of the leakage current densities in the Gd{sub 2}O{sub 3}:N layers with increasing nitrogen content suggests that doping of epitaxial Gd{sub 2}O{sub 3} thin films with nitrogen can be an effective route to eliminate the adverse effects of the oxygen vacancy induced defects in the oxide layers.

  13. Crystal growth, structure, and physical properties of Ln(Ag, Al, Si)₂ (Ln = Ce and Gd).

    PubMed

    Drake, Brenton L; Kangas, Michael J; Capan, C; Haldolaarachchige, N; Xiong, Y; Adams, P W; Young, D P; Chan, Julia Y

    2010-10-27

    Single crystals of CeM₂ and GdM₂ (M = Ag, Al, and Si) were grown by the flux growth technique and characterized by means of single crystal x-ray diffraction, magnetic susceptibility, resistivity, and heat capacity measurements. CeM₂ and GdM₂ crystallize in the tetragonal I4(1)/amd space group with the α-ThSi₂ structure type with lattice parameters a ~4.2 Å and c ~14.4 Å. Curie-Weiss behavior is observed for both analogues with CeM₂ ordering first ferromagnetically at 11 K with a second antiferromagnetic transition at 8.8 K while GdM₂ orders antiferromagnetically at 24 K. Heat capacity measurements on CeM₂ show two magnetic transitions at 10.8 and 8.8 K with an electronic specific heat coefficient, γ(0), of ~53 mJ K(-2) mol(-1). The entropy at the magnetic transition is less than the expected Rln2 for CeM₂, reinforcing the assertions of an enhanced mass state and Kondo behavior being observed in the resistivity.

  14. Achieving a table-like magnetocaloric effect and large refrigerant capacity in in situ multiphase Gd65Mn25Si10 alloys obtained by crystallization treatment

    NASA Astrophysics Data System (ADS)

    Shen, X. Y.; Zhong, X. C.; Huang, X. W.; Mo, H. Y.; Feng, X. L.; Liu, Z. W.; Jiao, D. L.

    2017-01-01

    In situ multiphase structure Gd65Mn25Si10 alloys were fabricated by melt spinning and subsequent crystallization treatment. In the process of crystallization, the α-Gd, GdMn2 and Gd5Si3 phases precipitate in the amorphous matrix in turn. The Curie temperature (T C) values for the α-Gd crystallization phase and amorphous matrix can be tailored by tuning the crystallization treatment time. All three multiphase alloys obtained by crystallization treatment at 637 K for 20, 30 and 40 min, respectively, undergo multiple successive magnetic phase transitions. A table-like magnetic entropy change over a wide temperature range (~90-120 K) and a large full width at half maximum (ΔT FWHM) magnetic entropy change (~230 K) were achieved in the above-mentioned crystallized alloys, resulting in large refrigerant capacities (RCs). The enhanced RCs of the three crystallized alloys for a magnetic field change of 0-5 T are in the range of 541-614 J kg-1. Large ΔT FWHM and RC values and a table-like (-ΔS M)max feature obtained in in situ multiphase Gd65Mn25Si10 crystallized alloys make them suitable for potential application in efficient Ericsson-cycle magnetic refrigeration working in a temperature range from 74 to 310 K.

  15. Revealing unusual chemical bonding in planar hyper-coordinate Ni2Ge and quasi-planar Ni2Si two-dimensional crystals.

    PubMed

    Yang, Li-Ming; Popov, Ivan A; Frauenheim, Thomas; Boldyrev, Alexander I; Heine, Thomas; Bačić, Vladimir; Ganz, Eric

    2015-10-21

    We discover unusual chemical bonding in a novel planar hyper-coordinate Ni2Ge free-standing 2D monolayer, and also in a nearly planar slightly buckled Ni2Si monolayer. This unusual bonding is revealed by Solid State Adaptive Natural Density Partitioning analysis. This analysis shows that a new type of 2c-2e Ni-Si σ and 3c-2e Ni-Ge-Ni σ bonds stabilize these 2D crystals. This is completely different from any previously known 2D crystals. Both of these free-standing monolayers are global minima in two-dimensional space. Although their exotic structure has unprecedented chemical bonding, they show extraordinary stability as single layers. The stabilities of these frameworks are confirmed by phonon dispersion calculations and ab initio molecular dynamics calculations. For Ni2Si, the framework was maintained during short 10 ps molecular dynamics annealing up to 1500 K, while Ni2Ge survived 10 ps runs up to 900 K. Both systems are predicted to be non-magnetic and metallic. As these new 2D crystals contain hypercoordinated Group 14 atoms, they are examples of a new class of 2D crystals with unconventional chemical bonding and potentially exciting new properties. Interestingly, we find that the stabilities of Ni2Si and Ni2Ge are much higher than that of silicene and germanene. Thus, this work provides a novel way to stabilize 2D sheets of Group 14 elements.

  16. Low field magneto caloric effect in (Gd1-x Prx)5 Si3.2 Sn0.8 alloys

    NASA Astrophysics Data System (ADS)

    Xavier, J.; Saban, K. V.

    2015-02-01

    The structural, thermal and magnetic properties of the arc melted (Gd1-x Prx)5 Si3.2 Sn0.8 alloys with x = 0, 0.05, 0.1 and 0.15 were studied. A maximum magnetic entropy change of 1.2034 J/kgK occurs for the x = 0.1 alloy at 299 K for a low magnetic field change of 1.58 T. The Arrott plot technique confirms a second order ferromagnetic to paramagnetic phase transition in all these Si rich orthorhombic samples. Tuneable Tc around room temperature, moderate values of ΔSm in low magnetic fields and absence of magnetic hysteresis make these alloys useful with regard to room temperature magnetic refrigeration.

  17. Czochralski growth of 2 in. Ce-doped (La,Gd)2Si2O7 for scintillator application

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akira; Shoji, Yasuhiro; Kurosawa, Shunsuke; Chani, Valery I.; Murakami, Rikito; Horiai, Takahiko; Kamada, Kei; Yokota, Yuui; Ohashi, Yuji; Kochurikhin, Vladimir

    2016-10-01

    Growth of 2-in. diameter Ce-doped (La,Gd)2Si2O7 (La-GPS) scintillating crystals by Czochralski method using Ir crucible is reported. The composition of the host material was approximately equal to La0.5Gd1.5Si2O7 and the concentration of the Ce3+-activator was either 0.5 or 1.5 at.% with respect to the total content of the rare-earths forming the host crystal matrix. Effects of the hot zone construction including inductive coil position, presence/absence of the after-heater, rotation rate and other growth parameters on the crystal quality are discussed in some details. The crystals produced in optimized conditions were colorless, transparent, uniform in their shape, crack- and inclusions-free, and demonstrated smooth glass-like surface. The length of the crystals' cylindrically-shaped body parts exceed 100 mm. The growth results were well reproducible. The main disadvantage of the growth process is associated with short lifetime of the Ir crucible and its deformation caused by thermal expansion of the pre-solidified melt at each heating stage.

  18. The divalent ion codoping effect on Ce-doped (Gd, La)2Si2O7 single crystals

    NASA Astrophysics Data System (ADS)

    Horiai, Takahiko; Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Yamaji, Akihiro; Pejchal, Jan; Ohashi, Yuji; Arakawa, Mototaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira

    2017-06-01

    Ce-doped (Gd, La)2Si2O7 scintillators have fast decay time and keep high light output even at high temperature (∼150°C). To improve the scintillation properties such as light output and decay time, Ce-doped (Gd, La)2Si2O7 scintillators codoped with the divalent ions (e.g. Mg2+, Ca2+) have been studied. In this study, we focused on the other divalent ions (Sr2+ and Ba2+), and investigated their effect on the scintillation properties and temperature dependence of light output. The absorption due to Ce4+ was not observed for Sr or Ba codoping. The light outputs were degraded by Sr2+ or Ba2+ codoping, while the decay times at room temperature were not changed for the samples codoped with divalent ions. On the other hand, the temperature dependence of light output for Ba-codoped sample was improved, and the light output value at 175°C was 36,000 photons/MeV, which was 93% of that at 25°C.

  19. Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect

    NASA Astrophysics Data System (ADS)

    Yokouchi, Tomoyuki; Kanazawa, Naoya; Tsukazaki, Atsushi; Kozuka, Yusuke; Kikkawa, Akiko; Taguchi, Yasujiro; Kawasaki, Masashi; Ichikawa, Masakazu; Kagawa, Fumitaka; Tokura, Yoshinori

    2015-10-01

    We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect the characteristic planar Hall anomalies in the thin films under the in-plane magnetic field at low temperatures, which indicates the formation of skyrmion strings lying in the film plane. Uniaxial magnetic anisotropy plays an important role in stabilizing the in-plane skyrmions in the MnSi thin film.

  20. Analysis of Gd5(Si2Ge2) Microstructure and Phase Transition

    SciTech Connect

    Meyers, John Scott

    2002-01-01

    With the recent discovery of the giant magnetocaloric effect and the beginning of extensive research on the properties of Gd5(SixGe1-x)4, a necessity has developed for a better understanding of the microstructure and crystal structure of this family of rare earth compounds with startling phenomenological properties. The aim of this research is to characterize the microstructure of the Gd5(SixGe1-x)4, with X ≅ 2 and its phase change by using both transmission and electron microscopes. A brief history of past work on Gd5(SixGe1-x)4 is necessary to understand this research in its proper context.

  1. Superior dielectric properties for template assisted grown (100) oriented Gd{sub 2}O{sub 3} thin films on Si(100)

    SciTech Connect

    Roy Chaudhuri, Ayan Osten, H. J.; Fissel, A.

    2014-01-06

    We report about the single crystalline growth and dielectric properties of Gd{sub 2}O{sub 3}(100) thin films on Si(100) surface. Using a two step molecular beam epitaxy growth process, we demonstrate that controlled engineering of the oxide/Si interface is a key step to achieve the atypical (100) oriented growth of Gd{sub 2}O{sub 3}. Unusually, high dielectric constant values (∼23–27) were extracted from capacitance voltage measurements. Such effect can be understood in terms of a two dimensional charge layer at the Gd{sub 2}O{sub 3}/Si interface (W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012)) which can influence the dielectric properties of the oxide layer by forming an additional negative quantum capacitance.

  2. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

    PubMed

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

    2016-12-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  3. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

    NASA Astrophysics Data System (ADS)

    Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.

    2016-02-01

    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

  4. Fabrication of a novel nanocomposite Ag/graphene@SiO2-NaLuF4:Yb,Gd,Er for large enhancement upconversion luminescence.

    PubMed

    Yin, Dongguang; Cao, Xianzhang; Zhang, Lu; Tang, Jingxiu; Huang, Wenfeng; Han, Yanlin; Wu, Minghong

    2015-06-28

    Upconversion nanocrystals have a lot of advantages over other fluorescent materials. However, their applications are still limited due to their comparatively low upconversion luminescence (UCL). In the present study, a novel nanocomposite of Ag/graphene@SiO2-NaLuF4:Yb,Gd,Er for enhancing UCL was fabricated successfully, and its morphology, crystalline phase, composition, and fluorescent property were investigated. It is interesting to find that the Ag/graphene@SiO2-NaLuF4:Yb,Gd,Er and Ag@SiO2-NaLuF4:Yb,Gd,Er nanocomposites showed high UCL enhancements of 52- and 10-fold compared to the control of Ag-free nanocomposite SiO2-NaLuF4:Yb,Gd,Er, respectively. The enhancement of 52-fold is greater than those reported in our previous studies and some papers. Moreover, the measured life times of the Ag-presented nanocrystals were longer than that of Ag-absent counterparts. These enhancements of UCL can be ascribed to the effect of metal-enhanced fluorescence, which is caused by the enhancement of the local electric field. The UCL intensity of Ag/graphene@SiO2-NaLuF4:Yb,Gd,Er was 5.2-fold higher than that of Ag@SiO2-NaLuF4:Yb,Gd,Er, indicating that graphene presented in the fabricated nanocomposite structure favors metal-enhanced UCL. The small-sized Ag nanoparticles anchored on the graphene sheet mutually enhanced each other's polarizability and surface plasmon resonance, resulting in a big metal-enhanced UCL. This study provides a new strategy for effectively enhancing the UCL of upconversion nanocrystals. The enhancement potentially increases the overall upconversion nanocrystal detectability for highly sensitive biological, medical, and optical detections.

  5. Luminescence properties and identification of the crystallographic sites of Ce3+ in LiGd9(SiO4)6O2

    NASA Astrophysics Data System (ADS)

    Xie, Mubiao; Zhu, Guoxian; Pan, Rongkai

    2017-03-01

    A series of LiGd9-x(SiO4)6O2:xCe3+ phosphors were prepared by a conventional high temperature solid state reaction method, and their spectroscopic characteristic were systematically investigated. The results showed that two types of Ce3+-emitting centers with emission at about 390 and 430 nm existed in the phosphors LiGd9(SiO4)6O2:Ce3+. The Stokes shift and crystal field depression of Ce(1) and Ce(2) were investigated. The concentration quenching effect and the critical distance of energy transfer were determined.

  6. Planar edge terminations for high voltage 4H-SiC power MOSFETs

    NASA Astrophysics Data System (ADS)

    Soler, Victor; Berthou, Maxime; Mihaila, Andrei; Monserrat, Josep; Godignon, Philippe; Rebollo, José; Millán, José

    2017-03-01

    Several edge termination structures for high voltage 4H-SiC devices compatible with a planar power MOSFET fabrication process are analyzed in this paper. The edge terminations’ efficiency has been experimentally demonstrated on PiN diodes with breakdown voltage capabilities ranging from 2 to 5 kV, fabricated within a full power MOSFET process technology. The studied edge terminations consist of typical JTEs, novel FGRs using MOSFET P-well implantation, as well as a combination of JTEs and FGRs. The experimental results have shown a good efficiency of most of the implemented edge terminations. It is also shown that P-well FGRs could be an effective cost solution for high voltage SiC based power MOSFETs. Moreover, the edge termination combining JTEs and FGRs concepts shows a better tolerance of breakdown voltage values against variations in the JTE dose. The same edge termination design allows one to obtain a good efficiency for both 1.7 and 4.5 kV PiN diodes. The optimal termination has been successfully implemented on 4.5 kV power MOSFETs.

  7. Luminescent properties of Tb-activated rare-earth oxyapatite silicate MLn4Si3O13 (M = Ca, Sr, Ln = La, Gd)

    NASA Astrophysics Data System (ADS)

    Yamane, A.; Kunimoto, T.; Ohmi, K.; Honma, T.; Kobayashi, H.

    2006-09-01

    Rare-earth oxyapatites MLn4Si3O13 (M = Ca, Sr, Ba Ln = La, Gd) have been proposed as a new plasma display panel (PDP) host material to overcome the problems of Zn2SiO4:Mn commercial green phosphor, such as luminance degradation and poor surface charge. Tb-doped MLn4Si3O13 phosphor powders show a green luminescence with the CIE color coordinate (x, y) = (0.337, 0.562). The PL excitation band lies continuously in the wavelength region from 130 to 260 nm. The photoluminescence (PL) peak intensity of SrGd4Si3O13:Tb is comparable with that of Zn2SiO4:Mn. The phosphor is a candidate for a green PDP phosphor for Xe2 excitation.

  8. Photoluminescent and magnetic properties of lanthanide containing apatites: NaxLn10-x(SiO4)6O2-yFy, CaxLn10-x(SiO4)6O2-yFy (Ln = Eu, Gd, and Sm), Gd9.34(SiO4)6O2, and K1.32Pr8.68(SiO4)6O1.36F0.64.

    PubMed

    Latshaw, Allison M; Hughey, Kendall D; Smith, Mark D; Yeon, Jeongho; Zur Loye, Hans-Conrad

    2015-02-02

    Single crystals of NaEu(9)(SiO(4))(6)O(2), Na(1.5)Eu(8.5)(SiO(4))(6)OF, Na(1.64)Gd(8.36)(SiO(4))(6)O(0.72)F(1.28), Gd(9.34)(SiO(4))(6)O(2), Ca(2.6)Eu(7.4)(SiO(4))(6)O(1.4)F(0.6), Ca(4.02)Sm(5.98)(SiO(4))(6)F(2), and K(1.32)Pr(8.68)(SiO(4))(6)O(1.36)F(0.64) and powders of NaEu(9)(SiO(4))(6)O(2), Na(1.5)Eu(8.5)(SiO(4))(6)OF, Eu(9.34)(SiO(4))(6)O(2), and Gd(9.34)(SiO(4))(6)O(2) were synthesized via flux growth in selected alkali-fluoride melts. All of the compounds adopt the apatite structure with space group P6(3)/m. Luminescence and magnetic data were collected on NaEu(9)(SiO(4))(6)O(2), Na(1.5)Eu(8.5)(SiO(4))(6)OF, Eu(9.34)(SiO(4))(6)O(2), and Gd(9.34)(SiO(4))(6)O(2). Luminescent data indicate that changing the cations and anions that surround the lanthanide site does not change the luminescent properties, making apatites versatile structures for optical materials.

  9. Folic acid-conjugated GdPO4:Tb3+@SiO2 Nanoprobe for folate receptor-targeted optical and magnetic resonance bi-modal imaging

    NASA Astrophysics Data System (ADS)

    Xu, Xianzhu; Zhang, Xiaoying; Wu, Yanli

    2016-11-01

    Both fluorescent and magnetic nanoprobes have great potential applications for diagnostics and therapy. In the present work, a folic acid-conjugated and silica-modified GdPO4:Tb3+ (GdPO4:Tb3+@SiO2-FA) dual nanoprobe was strategically designed and synthesized for the targeted dual-modality optical and magnetic resonance (MR) imaging via a facile aqueous method. Their structural, optical, and magnetic properties were determined using transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR), ultraviolet-visible spectra (UV-Vis), photoluminescence (PL), and superconducting quantum interference device (SQUID). These results indicated that GdPO4:Tb3+@SiO2-FA were uniform monodisperse core-shell structured nanorods (NRs) with an average length of 200 nm and an average width of 25 nm. The paramagnetic property of the synthesized GdPO4:Tb3+@SiO2-FA NRs was confirmed with its linear hysteresis plot (M-H). In addition, the NRs displayed an obvious T1-weighted effect and thus it could potentially serve as a T1-positive contrast agent. The NRs emitted green lights due to the 5D4 → 7F5 transition of the Tb3+. The in vitro assays with NCI-H460 lung cancer cells and human embryonic kidney cell line 293T cells indicated that the GdPO4:Tb3+@SiO2-FA nanoprobe could specifically bind the cells bearing folate receptors (FR). The MTT assay of the NRs revealed that its cytotoxicity was very low. Further in vivo MRI experiments distinctively depict enhanced anatomical features in a xenograft tumor. These results suggest that the GdPO4:Tb3+@SiO2-FA NPs have excellent imaging and cell-targeting abilities for the folate receptor-targeted dual-modality optical and MR imaging and can be potentially used as the nanoprobe for bioimaging.

  10. HTS planar gradiometer consisting of SQUID with multi-turn input coil and large pickup coil made of GdBCO coated conductor

    NASA Astrophysics Data System (ADS)

    Tsukamoto, Akira; Adachi, Seiji; Oshikubo, Yasuo; Hato, Tsunehiro; Enpuku, Keiji; Sugisaki, Masaki; Arai, Eiichi; Tanabe, Keiichi

    2013-01-01

    We have investigated the fabrication of a high-temperature superconducting (HTS) gradiometer with long baseline for geophysical applications. The proof-of-concept gradiometer using a 1-turn pickup coil made of a GdBa2Cu3Oy coated conductor (GCC) and 5.5-turn input coil integrated on a SQUID was fabricated in our previous work. In this study, we have optimized the device structure to improve the frequency response, gradient field sensitivity and gradiometer balance. The fabricated flux transformer consists of a 6-turn planar gradiometric pickup coil and a 26-turn input coil made of an HTS thin film. A low-melting-point alloy was used to connect polished Ag surfaces of the CGG pickup coil and Au pads of the input coil. An HTS SQUID was formed on another substrate and stacked on the input coil. A mechanical balancing structure using three pieces of GCC as a superconducting shield was also implemented. The fabricated gradiometer showed a gradient field noise of 0.8 fT/cm Hz1/2 in the white noise regions, a gradiometer balance of 1/142, and a cutoff frequency of 9 Hz corresponding to a 2 mΩ contact resistance between the pickup coil and the input coil.

  11. RE2MAl6Si4 (RE = Gd, Tb, Dy; M = Au, Pt): layered quaternary intermetallics featuring CaAl2Si2-type and YNiAl4Ge2-type slabs grown from aluminum flux.

    PubMed

    Latturner, Susan E; Bilc, Daniel; Mahanti, S D; Kanatzidis, Mercouri G

    2003-12-01

    Six new intermetallic aluminum silicides--Gd(2)PtAl(6)Si(4), Gd(2)AuAl(6)Si(4), Tb(2)PtAl(6)Si(4), Tb(2)AuAl(6)Si(4), Dy(2)PtAl(6)Si(4), and Dy(2)AuAl(6)Si(4)--have been obtained from reactions carried out in aluminum flux. The structure of these compounds was determined by single-crystal X-ray diffraction. They form in space group Rthremacr;m with cell constants of a = 4.1623(3) A and c = 51.048(5) A for the Gd(2)PtAl(6)Si(4) compound. The crystal structure is comprised of hexagonal nets of rare earth atoms alternating with two kinds of layers that have been observed in other multinary aluminide intermetallic compounds (CaAl(2)Si(2) and YNiAl(4)Ge(2)). All six RE(2)MAl(6)Si(4) compounds show antiferromagnetic transitions at low temperatures (T(N) < 20 K); magnetization studies of the Dy compounds show metamagnetic behavior with reorientation of spins at 6000 G. Band structure calculations indicate that the AlSi puckered hexagonal sheets in this structure are electronically distinct from the other surrounding structural motifs.

  12. The electronic structure and spin polarization of Co2Mn0.75(Gd, Eu)0.25Z (Z=Si, Ge, Ga, Al) quaternary Heusler alloys

    NASA Astrophysics Data System (ADS)

    Berri, Saadi

    2016-03-01

    A first-principles approach is used to study the electronic and magnetic properties of Co2Mn0.75(Gd, Eu)0.25Z(Z=Si, Ge, Ga, Al) quaternary Heusler alloys. The investigation was done using the (FP-LAPW) method where the exchange-correlation potential was calculated with the frame of GGA-WC. At ambient conditions our calculated results of band structures reveal that for Co2Mn0.75(Gd, Eu)0.25Z(Z=Si, Ge) has a half-metallic (HM) band structure profile showing 100% spin polarization at the Fermi level. In contrast, Co2Mn0.75(Gd, Eu)0.25Z(Z=Ga, Al) alloys are found to be metallic. Finally, the half metallic compounds found in some structures of this series might be useful in spintronic devices.

  13. Annealing influence on the magnetostructural transition in Gd5Si1.3Ge2.7 thin films

    DOE PAGES

    Pires, A. L.; Belo, J. H.; Gomes, I. T.; ...

    2015-05-19

    Due to the emerging cooling possibilities at the micro and nanoscale, such as the fast heat exchange rate, the effort to synthesize and optimize the magnetocaloric materials at these scales is rapidly growing. Here, we report the effect of different thermal treatments on Gd5Si1.3Ge2.7 thin film in order to evaluate the correlation between the crystal structure, magnetic phase transition and magnetocaloric effect. For annealing temperatures higher than 500ºC, the samples showed a typical paramagnetic behavior. On the other hand, thermal treatments below 500ºC promoted the suppression of the magnetostructural transition at 190 K, while the magnetic transition around 249 Kmore » is not affected. This magnetostructural transition extinction was reflected in the magnetocaloric behavior and resulted in a drastic decrease in the entropy change peak value (of about 68%). An increase in TC was reported, proving that at the nanoscale, heat treatments may be a useful tool to optimize the magnetocaloric properties in Gd5(SixGe1-x)4 thin films.« less

  14. Luminescence and absorption of the Pr{sup 3+} ion in a Gd{sub 2}SiO{sub 5} crystal

    SciTech Connect

    Kuleshov, V.V.; Mikhailov, V.P.; Radkevich, S.A.

    1994-10-01

    Results of investigation of optical absorption and luminescence and lifetimes of Pr{sup 3+} ions in a Gd{sub 2}SiO{sub 5} crystal are reported. The energy-level structure of the Pr{sup 3+} ion is determined with allowance for Stark splitting. Possible laser transitions in this material are discussed. 8 refs., 4 figs., 3 tabs.

  15. Growth and luminescent properties of Ce and Ce-Tb doped (Y,Lu,Gd)2SiO5:Ce single crystalline films

    NASA Astrophysics Data System (ADS)

    Zorenko, Yuriy; Gorbenko, Vitaliy; Savchyn, Volodymyr; Zorenko, Tetyana; Grinyov, Boris; Sidletskiy, Oleg; Fedorov, Alexander

    2014-09-01

    The paper presents the results of systematic research directed on the development of scintillating screens based on single crystalline films of Ce and Ce-Tb doped (Y,Lu,Gd)2SiO5 orthosilicates using the liquid phase epitaxy method.

  16. Large magnetic cooling power involving frustrated antiferromagnetic spin-glass state in R2NiSi3(R =Gd ,Er )

    NASA Astrophysics Data System (ADS)

    Pakhira, Santanu; Mazumdar, Chandan; Ranganathan, R.; Giri, S.; Avdeev, Maxim

    2016-09-01

    The ternary intermetallic compounds Gd2NiSi3 and Er2NiSi3 are synthesized in chemically single phase, which are characterized using dc magnetization, ac magnetic susceptibility, heat capacity, and neutron diffraction studies. Neutron diffraction and heat capacity studies confirm that long-range magnetic ordering coexists with the frustrated glassy magnetic components for both compounds. The static and dynamical features of dc magnetization and frequency-dependent ac susceptibility data reveal that Gd2NiSi3 is a canonical spin-glass system, while Er2NiSi3 is a reentrant spin cluster-glass system. The spin freezing temperature merges with the long-range antiferromagnetic ordering temperature at 16.4 K for Gd2NiSi3 . Er2NiSi3 undergoes antiferromagnetic ordering at 5.4 K, which is slightly above the spin freezing temperature at 3 K. The detailed studies of nonequilibrium dynamical behavior, viz., the memory effect and relaxation behavior using different protocols, suggest that both compounds favor the hierarchical model over the droplet model. A large magnetocaloric effect is observed for both compounds. Maximum values of isothermal entropy change (-Δ SM ) and relative cooling power (RCP) are found to be 18.4 J/kg K and 525 J/kg for Gd2NiSi3 and 22.6 J/kg K and 540 J/kg for Er2NiSi3 , respectively, for a change in field from 0 to 70 kOe. The values of RCP are comparable to those of the promising refrigerant materials. A correlation between large RCP and magnetic frustration is discussed for developing new magnetic refrigerant materials.

  17. White light emitting LaGdSiO5:Dy3+ nanophosphors for solid state lighting applications

    NASA Astrophysics Data System (ADS)

    Ogugua, Simon N.; Swart, Hendrik C.; Ntwaeaborwa, Odireleng M.

    2016-01-01

    Powdered dysprosium (Dy3+) doped Lanthanum gadolinium oxyorthosilicate (LaGdSiO5) mixed phosphors were synthesized using urea-assisted solution combustion method. The X-ray diffractometer analysis showed that the samples crystalized in the pure monoclinic mixed phase of LaGdSiO5. The crystallite size and the lattice strain calculated from the X-ray diffraction peaks using Williamson-Hall equation varied from 12 nm to 16 nm and 1.6 ×10-2 to 2.43 ×10-2 respectively. The photoluminescence (PL) emission spectra recorded using 425, 454 and 475 nm excitation wavelengths exhibit characteristic similar to the YAG:Ce phosphor pumped InGaN LED system, by absorbing portion of the excitation energy and re-emitting it. The emission spectra were characterized by radiative recombination at 425, 454, 475, 485 and 575 nm depending on the excitation wavelength. These emission line are ascribed to the f→f transitions of Dy3+. The peak intensity and hence the color of the emitted visible light were dependent on the concentration of Dy3+. The International Commission on Illumination (CIE) color coordinates of (0.336, 0.313) and (0.359, 0.361) were obtained for Dy3+ molar concentration of 0.05 and 3.0 mol% when the emission was monitored using 454 nm and 475 nm respectively. The band gap measured from the reflectance curve using Tauc plot initially decreased with increasing Dy3+ concentration, but at higher concentration, it started to increase. These materials were evaluated for solid state lighting application.

  18. Planar SiC MEMS flame ionization sensor for in-engine monitoring

    NASA Astrophysics Data System (ADS)

    Rolfe, D. A.; Wodin-Schwartz, S.; Alonso, R.; Pisano, A. P.

    2013-12-01

    A novel planar silicon carbide (SiC) MEMS flame ionization sensor was developed, fabricated and tested to measure the presence of a flame from the surface of an engine or other cooled surface while withstanding the high temperature and soot of a combustion environment. Silicon carbide, a ceramic semiconductor, was chosen as the sensor material because it has low surface energy and excellent mechanical and electrical properties at high temperatures. The sensor measures the conductivity of scattered charge carriers in the flame's quenching layer. This allows for flame detection, even when the sensor is situated several millimetres from the flame region. The sensor has been shown to detect the ionization of premixed methane and butane flames in a wide temperature range starting from room temperature. The sensors can measure both the flame chemi-ionization and the deposition of water vapour on the sensor surface. The width and speed of a premixed methane laminar flame front were measured with a series of two sensors fabricated on a single die. This research points to the feasibility of using either single sensors or arrays in internal combustion engine cylinders to optimize engine performance, or for using sensors to monitor flame stability in gas turbine applications.

  19. Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

    NASA Astrophysics Data System (ADS)

    Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

    2017-10-01

    A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal–graphene–metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W‑1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W‑1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I–V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

  20. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    NASA Astrophysics Data System (ADS)

    Zhou, H. P.; Xu, S.; Xu, M.; Xu, L. X.; Wei, D. Y.; Xiang, Y.; Xiao, S. Q.

    2017-02-01

    Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiHn/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  1. Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform.

    PubMed

    Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning

    2016-08-08

    We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform.

  2. Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

    SciTech Connect

    Hadimani, R. L.; Melikhov, Y.; Schlagel, D. L.; Lograsso, T. A.; Dennis, K. W.; McCallum, R. W.; Jiles, D. C.

    2015-01-30

    Gd5(SixGe1–x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6. In this study, we have investigated the first order and second order phase transition temperatures of these samples using magnetic moment vs. temperature and magnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

  3. Magnesium substitutions in rare-earth metal germanides with the Gd5Si4 type. Synthesis, structure determination and magnetic properties of RE5-xMgxGe4 (RE=Gd-Tm, Lu and Y)

    SciTech Connect

    Sarrao, J L; Thompson, Joe D; Tobash, P H; Bobev, S

    2009-01-01

    A series of magnesium-substituted rare-earth metal germanides with a general formula RE{sub 5-x}Mg{sub x}Ge{sub 4} (x {approx} 1.0-2.3; RE =Gd-Tm, Lu, Y) have been synthesized by high-temperature reactions and structurally characterized by single-crystal X-ray diffraction. These compounds crystallize with the common Gd{sub 5}Si{sub 4} type in the orthorhombic space group Pnma (No. 62; Z =4; Pearson's code oP36) and do not appear to undergo temperature-induced crystallographic phase transitions down to 120 K. Replacing rare-earth metal atoms with Mg, up to nearly 45 % at., reduces the valence electron count and is clearly expressed in the subtle changes of the Ge-Ge and metal-metal bonding. Magnetization measurements as a function of the temperature and the applied field reveal complex magnetic structures at cryogenic temperatures, and Curie-Weiss paramagnetic behavior at higher temperatures. The observed local moment magnetism is consistent with RE+ ground states in all cases. In the magnetically ordered phases, the magnetization cannot reach saturation in fields up to 50 kOe. The structural trends across the series and the variations of hte magnetic properties as a function of the Mg content are also discussed. KEYWORDS: Rare-earth intermetallics, germanides, crystal structure,Gd{sub 5}Si{sub 4} type.

  4. Selected AB4(2-/-) (A = C, Si, Ge; B = Al, Ga, In) ions: a battle between covalency and aromaticity, and prediction of square planar Si in SiIn4(2-/-).

    PubMed

    Alexandrova, Anastassia N; Nayhouse, Michael J; Huynh, Mioy T; Kuo, Jonathan L; Melkonian, Arek V; Chavez, Gerardo; Hernando, Nina M; Kowal, Matthew D; Liu, Chi-Ping

    2012-11-21

    CAl(4)(2-/-) (D(4h), (1)A(1g)) is a cluster ion that has been established to be planar, aromatic, and contain a tetracoordinate planar C atom. Valence isoelectronic substitution of C with Si and Ge in this cluster leads to a radical change of structure toward distorted pentagonal species. We find that this structural change goes together with the cluster acquiring partial covalency of bonding between Si/Ge and Al(4), facilitated by hybridization of the atomic orbitals (AOs). Counter intuitively, for the AAl(4)(2-/-) (A = C, Si, Ge) clusters, hybridization in the dopant atom is strengthened from C, to Si, and to Ge, even though typically AOs are more likely to hybridize if they are closer in energy (i.e. in earlier elements in the Periodic Table). The trend is explained by the better overlap of the hybrids of the heavier dopants with the orbitals of Al(4). From the thus understood trend, it is inferred that covalency in such clusters can be switched off, by varying the relative sizes of the AOs of the main element and the dopant. Using this mechanism, we then successfully killed covalency in Si, and predicted a new aromatic cluster ion containing a tetracoordinate square planar Si, SiIn(4)(2-/-).

  5. Selected AB₄²-/- (A = C, Si, Ge; B = Al, Ga, In) Ions: a Battle Between Covalency and Aromaticity, and Prediction of Square Planar Si in SiIn₄²-/-

    SciTech Connect

    Alexandrova, Anastassia N.; Nayhouse, Michael J.; Huynh, Mioy T.; Kuo, Jonathan L.; Melkonian, Arek V.; Chavez, Gerardo; Hernando, Nina M.; Kowal, Matthew D.; Liu, Chi-Ping

    2012-11-21

    CAl₄²-/- (D₄h, ¹A₁g) is is a cluster ion that has been established to be planar, aromatic, and contain a tetracoordinate planar C atom. Valence isoelectronic substitution of C with Si and Ge in this cluster leads to a radical change of structure toward distorted pentagonal species. We find that this structural change goes together with the cluster acquiring partial covalency of bonding between Si/Ge and Al₄, facilitated by hybridization of the atomic orbitals (AOs). Counter intuitively, for the AAl₄²-/- (A = C, Si, Ge) clusters, hybridization in the dopant atom is strengthened from C, to Si, and to Ge, even though typically AOs are more likely to hybridize if they are closer in energy (i.e. in earlier elements in the Periodic Table). The trend is explained by the better overlap of the hybrids of the heavier dopants with the orbitals of Al₄. From the thus understood trend, it is inferred that covalency in such clusters can be switched off, by varying the relative sizes of the AOs of the main element and the dopant. Using this mechanism, we then successfully killed covalency in Si, and predicted a new aromatic cluster ion containing a tetracoordinate square planar Si, SiIn₄²-/-.

  6. Semipolar single component GaN on planar high index Si(11h) substrates

    SciTech Connect

    Ravash, Roghaiyeh; Blaesing, Juergen; Dadgar, Armin; Krost, Alois

    2010-10-04

    We present metal organic vapor phase epitaxy growth of polarization reduced, single component GaN on nonpatterned Si(112), Si(113), Si(114), Si(115), and Si(116) substrates. We find that the inclination angle of GaN c-axis with respect to the surface normal depends on the angle between Si(111) and above mentioned Si(11h)-surfaces. The growth of the GaN layer is essentially performed as c-axis oriented growth on the naturally occurring Si(111) facets of these Si(11h)-surfaces. The c-axis tilt-angle of GaN crystallites depends on the Si-surface direction and increases from Si(112) to Si(116) planes. GaN layers are investigated by x-ray analysis and scanning electron microscopy.

  7. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.

    PubMed

    Du, Wenna; Yang, Xiaoguang; Pan, Huayong; Ji, Xianghai; Ji, Haiming; Luo, Shuai; Zhang, Xingwang; Wang, Zhanguo; Yang, Tao

    2016-02-10

    We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.

  8. Structural, electronic, and magnetic properties of heterofullerene C(58)Si with odd number of atoms and a near planar tetracoordinate Si atom.

    PubMed

    Liu, Feng-Ling; Jalbout, Abraham F

    2008-06-01

    Density functional calculations and minimization techniques have been employed to characterize the structural and electronic properties of [5,6]-heterofullerene-C(58)Si-C(2v). Since it has odd number of atoms and a near planar tetracoordinate Si atom on the skeleton of the cage, it has odd number of atoms assembling a cage and is a novel molecule. Vibrational frequencies of the molecule have been calculated at the B3LYP/6-31G* level of theory. The absence of imaginary vibrational frequency confirms that the molecule corresponds to a true minimum on the potential energy hypersurface. Sixteen (13)C nuclear magnetic resonance (NMR) spectral signals of C(58)Si are characterized, and its heat of formation was estimated in this work.

  9. Designing of luminescent GdPO4:Eu@LaPO4@SiO2 core/shell nanorods: Synthesis, structural and luminescence properties

    NASA Astrophysics Data System (ADS)

    Ansari, Anees A.; Labis, Joselito P.; Aslam Manthrammel, M.

    2017-09-01

    GdPO4:Eu3+ (core) and GdPO4:Eu@LaPO4 (core/shell) nanorods (NRs) were successfully prepared by urea based co-precipitation process at ambient conditions which was followed by coating with amorphous silica shell via the sol-gel chemical route. The role of surface coating on the crystal structure, crystallinity, morphology, solubility, surface chemistry and luminescence properties were well investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, Fourier Transform Infrared (FTIR), UV-Vis, and photoluminescence spectroscopy. XRD pattern revealed highly purified, well-crystalline, single phase-hexagonal-rhabdophane structure of GdPO4 crystal. The TEM micrographs exhibited highly crystalline and narrow size distributed rod-shaped GdPO4:Eu3+ nanostructures with average width 14-16 nm and typical length 190-220 nm. FTIR spectra revealed characteristic infrared absorption bands of amorphous silica. High absorbance in a visible region of silica modified core/shell/Si NRs in aqueous environment suggests the high solubility along with colloidal stability. The photoluminescence properties were remarkably enhanced after growth of undoped LaPO4 layers due to the reduction of nonradiative transition rate. The advantages of presented high emission intensity and high solubility of core/shell and core/shell/Si NRs indicated the potential applications in monitoring biological events.

  10. Influence of vacuum upon preparation and luminescence of Si4+ and Ti4+ codoped Gd2O2S:Eu phosphor.

    PubMed

    Wang, Fei; Yang, Bin; Liu, Dachun; Ma, Wenhui; Chen, Xiumin; Dai, Yongnian

    2014-05-21

    As a novel red long afterglow phosphor, Si(4+) and Ti(4+) ion codoped Gd2O2S:Eu phosphor with spherical morphology, sub-micrometer size and narrow particle size distribution was synthesized by solid-state reaction in vacuum. The vacuum synthesis mechanism was determined by thermal analysis. The crystal structure, luminescence properties and mechanisms were investigated respectively by XRD, SEM and fluorescence spectrophotometer. The results show that well-crystallized Gd2O2S:Eu,Si,Ti phosphors are of hexagonal structure which is in agreement with the standard powder peak positions of Gd2O2S hexagonal phase. It displays pure red emission because of the strongest peaks at 627nm and 617nm which are attributed to energy transfer ((5)D0-(7)F2). There is a little blue shift of charge transfer excitation band in the excitation spectra between the bulk and sub-micrometer-sized samples, which may stem from size dependent shift and different lattice distortion in the position of the Eu(3+)-ligand electron transfer absorption/excitation band. To further study the influence of the impurities in Gd2O2S:Eu crystals on crystal growth, the simulated crystal face and its XRD patterns were illustrated. The preferred orientation of crystal growth changed from crystal face (101) to (100) thus to result in different luminescence mechanisms. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Hydrothermal synthesis, structure, and property characterization of rare earth silicate compounds: NaBa3Ln3Si6O20 (Ln = Y, Nd, Sm, Eu, Gd)

    NASA Astrophysics Data System (ADS)

    Sanjeewa, Liurukara D.; Fulle, Kyle; McMillen, Colin D.; Wang, Fenglin; Liu, Yufei; He, Jian; Anker, Jeffrey N.; Kolis, Joseph W.

    2015-10-01

    A series of new lanthanide (Ln) silicates have been synthesized using high temperature hydrothermal techniques, and structurally characterized using single crystal and powder X-ray diffraction. The compounds have the general formula NaBa3Ln3Si6O20 (Ln = Y, Nd, Sm, Eu, Gd), and crystallize in the space group Ama2 (No.40). As a representative example, the unit cell parameters of NaBa3Gd3Si6O20 are a = 14.731(3) Å, b = 23.864(5) Å, c = 5.5449(11) Å and Z = 4. The title compounds adopt a three dimensional polar acentric framework made of Ln-O-Si bonding. The framework is comprised of LnO8 and LnO7 units forming edge-sharing infinite chains along the c-axis. These oxy-bridged infinite chains are also linked by [Si4O13] tetrasilicate and [Si2O7] disilicate units to form the three-dimensional framework structure, with Ba2+ and Na+ cations residing inside channels of the framework. The polarity in the structure is imparted by the unusual tetrasilicate arrangement. The luminescence and magnetic properties were investigated on selected compounds. The temperature dependent magnetic susceptibility measurements on the Nd, Sm, and Gd derivatives reveal a Curie-Weiss behavior with an antiferromagnetic coupling parameter. For the Eu-derivative, the temperature dependent magnetic susceptibility deviates significantly from Curie-Weiss behavior. Luminescence properties of NaBa3Eu3Si6O20 and NaBa3Sm3Si6O20 compounds exhibited the characteristic transitions of Eu3+ (5D0 → 7FJ, J = 0-4) and Sm3+ (4G5/2 → 6HJ, J = 5/2, 7/2), respectively, leading to strong visible red and orange emissions, respectively.

  12. Performance study for the photon measurements of the upgraded LHCf calorimeters with Gd2SiO5 (GSO) scintillators

    NASA Astrophysics Data System (ADS)

    Makino, Y.; Tiberio, A.; Adriani, O.; Berti, E.; Bonechi, L.; Bongi, M.; Caccia, Z.; D'Alessandro, R.; Del Prete, M.; Detti, S.; Haguenauer, M.; Itow, Y.; Iwata, T.; Kasahara, K.; Masuda, K.; Matsubayashi, E.; Menjo, H.; Mitsuka, G.; Muraki, Y.; Papini, P.; Ricciarini, S.; Sako, T.; Sakurai, N.; Suzuki, T.; Tamura, T.; Torii, S.; Tricomi, A.; Turner, W. C.; Ueno, M.; Zhou, Q. D.

    2017-03-01

    The Large Hadron Collider forward (LHCf) experiment was motivated to understand the hadronic interaction processes relevant to cosmic-ray air shower development. We have developed radiation-hard detectors with the use of Gd2SiO5 (GSO) scintillators for proton-proton √s = 13 TeV collisions. Calibration of such detectors for photon measurement has been completed at the CERN SPS T2-H4 line in 2015 using electron beams of 100–250 GeV and muon beams of 150–250 GeV . After the channel-by-channel absolute energy calibration, the energy resolution of the calorimeters is confirmed to be better than 3% for electrons with energy above 100 GeV . The position dependence of the energy scale of the calorimeters was reduced to the level of 1% after the corrections for scintillator nonuniformity and the shower leakage effect. The position resolution of the new shower imaging detector, a GSO-bar hodoscope interleaved in the calorimeter, was 100 μm for 200 GeV electrons. The experimental results are well explained by Monte Carlo simulations. We have confirmed that the new detectors meet the requirement of the LHCf experiment at √s = 13 TeV.

  13. New orthorhombic derivative of CaCu5-type structure: RNi4Si compounds (R=Y, La, Ce, Sm, Gd-Ho), crystal structure and some magnetic properties

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.

    2013-12-01

    The crystal structure of new YNi4Si-type RNi4Si (R=Y, La, Ce, Sm, Gd-Ho) compounds has been established using powder X-ray diffraction. The YNi4Si structure is a new structure type, which is orthorhombic derivative of CaCu5-type structure (space group Cmmm N 65, oC12).

  14. Critical Behavior of Thermal Expansion and Magnetostriction in the Vicinity of the First order transition at the Curie Point of Gd5(SixGe1-x)4

    SciTech Connect

    Han, Mangui

    2004-01-01

    Thermal expansion (TE) and magnetostriction (MS) measurements have been conducted for Gd5(SixGe1-x)4 with a series of x values to study its critical behavior in the vicinity of transition temperatures. It was found that the Curie temperature of Gd5(SixGe1-x)4 for x 0 ~ 0.5 is dependent on magnetic field, direction of change of temperature (Tc on cooling was lower than Tc on heating), purity of Gd starting material, compositions, material preparation methods, and also can be triggered by the external magnetic field with a different dT/dB rate for different x values. For Gd5(Si1.95Ge2.05), Gd5(Si2Ge2), Gd5(Si2.09Ge1.91), it was also found that the transition is a first order magneto-structural transition, which means the magnetic transition and crystalline structure transition occur simultaneously, and completely reversible. Temperature hysteresis and phase coexistence have been found to confirm that it is a first order transformation. While for Gd5(Si0.15Ge3.85), it is partially reversible at some temperature range between the antiferromagnetic and the ferromagnetic state. For Gd5(Si2.3Ge1.7) and Gd5(Si3Ge1), it was a second order transformation between the paramagnetic and ferromagnetic state, because no ΔT have been found. Giant magnetostriction was only found on Gd5(Si1.95Ge2.05), Gd5(Si2Ge2), Gd5(Si2.09Ge1.91) in their vicinity of first order transformation. MFM images have also been taken on polycrystal sample Gd5(Si2.09Ge1.91) to investigate the transformation process. The results also indicates that the Curie temperature was lower and the thermally

  15. Luminescence and energy transfer of Tb(3+)-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

    PubMed

    Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

    2017-12-05

    Transparent Tb(3+)-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses with the greater than 4g/cm(3) were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd(3+) ion to Tb(3+) ion could occur and sensitize the luminescence of Tb(3+) ion. The green emission intensity of Tb(3+) ion could change with the increasing SiO2/B2O3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb(3+) ion, (5)D4→(7)FJ transitions could be enhanced through the cross relaxation between the two nearby Tb(3+) ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb(3+)-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Magnetic Field Induced Phase Transitions in Gd5(Si1.95Ge2.05)Single Crystal and the Anisotropic Magnetocaloric Effect

    SciTech Connect

    H. Tang; V.K. Pecharsky; A.O. Pecharsky; D.L. Schlagel; T.A. Lograsso; K.A. Gschneidner,jr.

    2004-09-30

    The magnetization measurements using a Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with the magnetic field applied along three crystallographic directions, [001], [010] and [100], were carried out as function of applied field (0-56 kOe) at various temperatures ({approx}5-320 K). The magnetic-field induced phase transformations at temperature above the zero-field critical temperature, i.e. the paramagnetic (PM) {leftrightarrow} ferromagnetic (FM) transitions with application or removal of magnetic field, are found to be temperature dependent and hysteretic. The corresponding critical fields increase with increasing temperature. The magnetic field (H)-temperature (T) phase diagrams have been constructed for the Gd{sub 5}(Si{sub 1.95}Ge{sub 2.05}) single crystal with field along the three directions. A small anisotropy has been observed. The magnetocaloric effect (MCE) has been calculated from the isothermal magnetization data, and the observed anisotropy correlates with H-T phase diagrams. The results are discussed in connection with the magnetic-field induced martensitic-like structural transition observed in the Gd{sub 5}(Si{sub 2}Ge{sub 2})-type compounds.

  17. Improved out-coupling efficiency of organic light emitting diodes fabricated on a TiO2 planarization layer with embedded Si oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Sung, Young Hoon; Jung, Pil-Hoon; Han, Kyung-Hoon; Kim, Yang Doo; Kim, Jang-Joo; Lee, Heon

    2017-10-01

    In order to increase the out-coupling efficiency of organic light emitting diodes, conical Si oxide nanostructures were formed on a glass substrate using nanoimprint lithography with hydrogen silsesquioxane. Then, the substrate was planarized with TiO2 nanoparticles. Since TiO2 nanoparticles have a higher refractive index than Si oxide, the surface of substrate is physically flat, but optically undulated in a manner that enables optical scattering and suppression of total internal reflection. Subsequently, OLEDs formed on a substrate with nanostructured Si oxide and a TiO2 planarization layer exhibit a 25% increase in out-coupling efficiency by suppressing total internal reflection.

  18. Ca, Mg, Fe, Si, Al, and Na in the Massive, Metal-Rich, Dust-Enshrouded, DAZ White Dwarf GD 362

    NASA Astrophysics Data System (ADS)

    Melis, C.; Koester, D.; Zuckerman, B.; Rich, R. M.; Hansen, B.; Kalirai, J.

    2006-06-01

    GD362 presents the greatest number of atomic species ever documented in a hydrogen atmosphere white dwarf. Our spectroscopy with Keck I (LRIS; 4 Å red, 2 Å blue resolution) and KECK II (ESI, 0.5 Å resolution) covers the wavelengths 3100-7400 Å and 3850-11,000 Å , respectively; in these ranges we identify lines from H, Mg, Fe, Si, Al, Ca, and Na. Preliminary analysis of the spectra yields photospheric abundances for Mg, Fe, Si, and Al in about the solar ratio relative to each other and a few times below solar relative to hydrogen. Relative to the abundance of these four metals, the calcium (sodium) abundance is about a factor of 10 larger (smaller) in GD 362 than it is in the Sun. We do not detect oxygen in GD362. From this we derive a limit on its abundance by number at least 104 times below that of hydrogen. Tentatively, we derive from atmospheric models a surface gravity of log g ˜ 9.00 for GD362 (whose effective temperature is 9740 K). D1 and D2 sodium lines in the ESI spectrum are seen both from the stellar photosphere (broad and deep) and, probably, from the interstellar medium (narrow and weaker). However, GD362 emits mid-infrared flux in excess of its photospheric emission. The excess is due to a dusty disk located beyond ˜ 10 stellar radii. Thus, we cannot presently rule out circumstellar sodium as the carrier of the narrow feature. This research was supported in part by NASA's Astrobiology Institute and other NASA grants to UCLA.

  19. Integrated planar lightwave bio/chem OEIC sensors on Si CMOS circuits

    NASA Astrophysics Data System (ADS)

    Jokerst, Nan M.; Brooke, Martin A.; Cho, Sang-Yeon; Thomas, Mikkel; Lillie, Jeffrey; Kim, Daeik; Ralph, Stephen; Dennis, Karla; Comeau, Benita; Henderson, Cliff

    2005-03-01

    Optical sensing, and the integration of sensors and electronics into Sensor on a Chip and Sensor on a Package systems are an approach to the creation of miniaturized, portable, customizable, low cost sensor systems for rapid health diagnostics, medical research, environmental monitoring, and security monitoring. To integrate optical sensing systems that are autonomous, it is essential to integrate the sensor, light source, and light detection into a single substrate or chip. The integration of this optical system with signal control and processing electronics enable discrimination with individually customized sensors in sensor arrays, and high sensitivity levels. Thin film optoelectronic active device integration with planar optical passive devices is a heterogeneous integration method for fabricating planar lightwave integrated circuits at the chip level and planar lightwave integrated systems at the substrate and package level.

  20. A promising RVO4:Eu(3+), Li(+)@SiO2 (R = Gd, Y and Gd/Y) red-emitting phosphor with improved luminescence (cd/m(2)) and colour purity for optical display applications.

    PubMed

    Rambabu, Urlagaddala; Munirathnam, Nagegownivari Ramachandra; Reddy, Busireddy Sudhakar; Chatterjee, Sandip

    2016-02-01

    Red emission intensity was optimized in three stages, by investigating the effects of: (i) host composition (Gd, Y and Gd/Y), (ii) codoping Li(+) as a sensitizer and, finally, (iii) with a SiO2 shell coating as a protecting layer. Lanthanide vanadate powder phosphors were synthesized using a modified colloidal precipitation technique. The effects of SiO2 coating on phosphor particles were characterized using scanning electron microscopy (SEM)-EDAX, transmission electron microscopy (TEM), Fourier transform infrared (FTIR) and photoluminescence (PL) measurements. An improvement in the PL intensity on Li codoping was due to improved crystallinity, which led to higher oscillating strengths for the optical transitions, and also a lowering of the inversion symmetry of Eu(3+) ions. Red emission intensity due to (5)D0  → (5)D2 transition of the phosphor Y0.94VO4:Eu(3+)0.05, Li(+)0.01 was enhanced by 22.28% compared with Y0.95VO4:Eu(3+)0.05, and was further improved by 58.73% with SiO2 coating. The luminescence intensity (I) and colour coordinates (x, y) of the optimized phosphor Y0.94VO4:Eu(3+)0.05, Li(+)0.01@SiO2, where I = 13.07 cd/m(2) and (x = 0.6721, y = 0.3240), were compared with values for a commercial red phosphor (Y2O2S:Eu(3+)), where I = 27 cd/m(2) and (x = 0.6522, y = 0.3437). The measured colour coordinates are superior to those of the commercial red phosphor, and moreover, match well with standard NTSC values (x = 0.67, y = 0.33). Copyright © 2015 John Wiley & Sons, Ltd.

  1. The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol

    NASA Astrophysics Data System (ADS)

    Yan, Li; Yuling, Liu; Aochen, Wang; Zhixin, Yang; Mingbin, Sun; Chuan, Cheng; Yufeng, Zhang; Nannan, Zhang

    2014-06-01

    There is a lot of hydroxyl on the surface of nano SiO2 sol used as an abrasive in the chemical mechanical planarization (CMP) process, and the chemical reaction activity of the hydroxyl is very strong due to the nano effect. In addition to providing a mechanical polishing effect, SiO2 sol is also directly involved in the chemical reaction. The stability of SiO2 sol was characterized through particle size distribution, zeta potential, viscosity, surface charge and other parameters in order to ensure that the chemical reaction rate in the CMP process, and the surface state of the copper film after CMP was not affected by the SiO2 sol. Polarization curves and corrosion potential of different concentrations of SiO2 sol showed that trace SiO2 sol can effectively weaken the passivation film thickness. In other words, SiO2 sol accelerated the decomposition rate of passive film. It was confirmed that the SiO2 sol as reactant had been involved in the CMP process of copper film as reactant by the effect of trace SiO2 sol on the removal rate of copper film in the CMP process under different conditions. In the CMP process, a small amount of SiO2 sol can drastically alter the chemical reaction rate of the copper film, therefore, the possibility that Cu/SiO2 as a catalytic system catalytically accelerated the chemical reaction in the CMP process was proposed. According to the van't Hoff isotherm formula and the characteristics of a catalyst which only changes the chemical reaction rate with out changing the total reaction standard Gibbs free energy, factors affecting the Cu/SiO2 catalytic reaction were derived from the decomposition rate of Cu (OH)2 and the pH value of the system, and then it was concluded that the CuSiO3 as intermediates of Cu/SiO2 catalytic reaction accelerated the chemical reaction rate in the CMP process. It was confirmed that the Cu/SiO2 catalytic system generated the intermediate of the catalytic reaction (CuSiO3) in the CMP process through the removal

  2. Gd 5 (Si,Ge) 4 thin film displaying large magnetocaloric and strain effects due to magnetostructural transition

    SciTech Connect

    Hadimani, Ravi L.; Silva, Joao H. B.; Pereira, Andre M.; Schlagel, Devo L.; Lograsso, Thomas A.; Ren, Yang; Zhang, Xiaoyi; Jiles, David C.; Araújo, Joao P.

    2015-01-19

    Magnetic refrigeration based on the magnetocaloric effect is one of the best alternatives to compete with vapor-compression technology. Despite being already in its technology transfer stage, there is still room for optimization, namely, on the magnetic responses of the magnetocaloric material. In parallel, the demand for different magnetostrictive materials has been greatly enhanced due to the wide and innovative range of technologies that emerged in the last years (from structural evaluation to straintronics fields). In particular, the Gd5(SixGe1-x)4 compounds are a family of well-known alloys that present both giant magnetocaloric and colossal magnetostriction effects. Despite their remarkable properties, very few reports have been dedicated to the nanostructuring of these materials: here, we report a ~800 nm Gd5Si2.7Ge1.3thin film. The magnetic and structural investigation revealed that the film undergoes a first order magnetostructural transition and as a consequence exhibits large magnetocaloric effect (-ΔSmMAX ~8.83 J kg-1 K-1, ΔH = 5T) and giant thermal expansion (12000 p.p.m). The thin film presents a broader magnetic response in comparison with the bulk compound, which results in a beneficial magnetic hysteresis reduction. The ΔSmMAX exhibited by the Gd5(Si,Ge)4thin film makes it a promising candidate for micro/nano magnetic refrigeration area.

  3. Luminescent properties of single Dy3+ ions activated Ca3Gd7(PO4)(SiO4)5O2 phosphor

    NASA Astrophysics Data System (ADS)

    Tong, Miaohui; Liang, Yujun; Li, Guogang; Xia, Zhanggen; Zhang, Mengfei; Yang, Fan; Wang, Qiang

    2014-07-01

    Single Dy3+ ions activated Ca3Gd7(PO4)(SiO4)5O2: Dy3+ (CGPS: Dy3+) phosphors were successfully synthesized by solid-state reaction method. The X-ray diffraction results confirm that the as-prepared CGPS: Dy3+ samples are pure CGPS hexagonal phase. Moreover, the substitution of Dy3+ for Gd3+ in CGPS host leads to the major diffraction peaks moving towards larger angle due to a smaller ions radius of Dy3+ than Gd3+. Upon excitation of 275 nm and 349 nm ultra violet (UV) that are respectively attributed to 8S → 6I transitions of Gd3+ and 6H15/2 → 6P7/2 transition of Dy3+, the characteristic emission of Dy3+ ions such as 4F9/2 → 6H15/2 (480 nm) and 4F9/2 → 6H13/2 (572 nm) can be clearly observed. A high ratio of yellow emission to blue emission (Y/B) implies that Dy3+ ions prefer to occupy low-symmetry 6h (Cs) sites in CGPS matrix. Therefore, white light can be obtained from Dy3+ mono-doped CGPS: Dy3+ phosphor with CIE chromaticity coordinates of (x = 0.328, y = 0.343). By calculation, the mechanism of concentration quenching between Dy3+ ions is electric dipole-dipole interaction. In addition, the energy transfer (ET) from Gd3+ to Dy3+ can also be observed. These results suggest that CGPS: Dy3+ phosphors could be a promising candidate for UV-based white light illumination.

  4. Magnetic and structural characteristics of RCo{sub 9+{delta}}Si{sub 4} alloys (R=Pr or Gd, {delta}=0{endash}4)

    SciTech Connect

    Huang, M.Q.; Wallace, W.E.; Ma, B.M.; Bounds, C.O.

    1997-04-01

    Studies of the magnetic and structural characteristics of RCo{sub 9+{delta}}Si{sub 4} ({delta}=0{endash}4), nonstoichiometric alloys, have been extended from R=La in our earlier work to R=Pr and Gd. In the present work, as the extra Co content increases, the magnetic properties M, T{sub c}, and H{sub c} are significantly enhanced compared to that of the stoichiometric alloys ({delta}=0). Using x-ray diffraction measurements, the sublattice occupancies are calculated. The extra Co atoms are found to occupy the 4a and 16L{sub 2} sites in the Ce{sub 2}Ni{sub 17}Si{sub 9} unit cell. They partially replace R and Si in these sites. {copyright} {ital 1997 American Institute of Physics.}

  5. Magnesium substitutions in rare-earth metal germanides with the orthorhombic Gd5Si4-type structure. Synthesis, crystal chemistry, and magnetic properties of RE(5-x)Mg(x)Ge4 (RE = Gd-Tm, Lu, and Y).

    PubMed

    Tobash, Paul H; Bobev, Svilen; Thompson, Joe D; Sarrao, John L

    2009-07-20

    A series of magnesium-substituted rare-earth metal germanides with a general formula RE(5-x)Mg(x)Ge(4) (x approximately = 1.0-2.3; RE = Gd-Tm, Lu, Y) have been synthesized by high-temperature reactions and structurally characterized by single-crystal X-ray diffraction. These compounds crystallize with the common Gd(5)Si(4) type structure in the orthorhombic space group Pnma (No. 62; Z = 4; Pearson's code oP36) and do not appear to undergo temperature-induced crystallographic phase transitions down to 120 K. Replacing rare-earth metal atoms with Mg, up to nearly 45% at., reduces the valence electron count and is clearly expressed in the subtle changes of the Ge-Ge and metal-metal bonding. Magnetization measurements as a function of the temperature and the applied field reveal complex magnetic structures at cryogenic temperatures and Curie-Weiss paramagnetic behavior at higher temperatures. The observed local moment magnetism is consistent with RE(3+) ground states in all cases. In the magnetically ordered phases, the magnetization cannot reach saturation in fields up to 50 kOe. The structural trends across the series and the variations of the magnetic properties as a function of the Mg content are also discussed.

  6. Determination of energy loss of 1200 keV deuterons along axial and planar channels of Si

    NASA Astrophysics Data System (ADS)

    Shafiei, S.; Lamehi-Rachti, M.

    2015-02-01

    In this paper, the energy loss of 1200 keV deuterons along the <1 0 0> and <1 1 0> axes as well as the {1 0 0} and {1 1 0} planes of Si were determined by the simulation of the channeling Rutherford backscattering spectra. The simulation was done by taking two considerations into account: (i) a minimum random component of the beam which enters the sample because of the scattering ions from the surface, (ii) the dechanneling starts at greater penetration depths, xDech. Moreover, it was assumed that the dechanneling follows a Gompertz type sigmoidal function with two parameters k and xc which present the dechanneling rate and range, respectively. The best simulation parameters, penetration depth at which the dechanneling starts, energy loss and dechanneling rate and range, were chosen by using the Levenberg-Marquardt algorithm. The experimental results are well reproduced by this simulation. The ratio of channeling energy loss to the random is changed from 0.63 ± 0.02 along the <1 1 0> axial channel to the 0.91 ± 0.02 along the {1 0 0} planar direction. The differences in the energy loss and the dechanneling process along the axial and planar channels are attributed to the potential barrier and the fractional area of each channel blocked by atoms. The ratio of channeling to random energy loss of deuterons along the <1 0 0> axial direction is in agreement with another reference.

  7. The effect of temperature on the impact process of SiO2 particle onto a planar surface

    NASA Astrophysics Data System (ADS)

    Dong, Ming; Li, Sufen; Shang, Yan

    2016-11-01

    This paper presents the results of a comprehensive program of experiments in which SiO2 particles were impacted under controlled conditions against a planar steel surface. The overall aim of these experiments was to gain an understanding of the ash deposition process in a pulverized coal boiler system. A continuous nitrogen flow carrying particles was used to simulate the flue gas in boiler, and planer steel surface was used to simulate the heat transfer tube in boiler. The effect of particle incident velocity, particle temperature and planar surface temperature on the normal restitution coefficient was examined. The results show that the normal restitution coefficient increases firstly with increasing incident velocity, and then decreases with increasing incident velocity in the measurement range (ranging from 8m/s to 13m/s). The normal restitution coefficient decreases with increasing particle temperature and surface temperature, and with temperature difference between particle and surface. The experiments are carried out in an atmospheric column, and individual impacts are recorded by a digital camera system. Keywords: Normal restitution coefficient, impaction experiments, particle, rebound characteristics.

  8. Superconductivity above 90 K in the square-planar compound system ABa2Cu3O(6 + x) with A = Y, La, Nd, Sm, Eu, Gd, Ho, Er, and Lu

    NASA Technical Reports Server (NTRS)

    Hor, P. H.; Meng, R. L.; Wang, Y. Q.; Gao, L.; Huang, Z. J.

    1987-01-01

    Superconductivity has been found in the 90-K range in ABa2Cu3O(6 + x) with A = La, Nd, Sm, Eu, Gd, Ho, Er, and Lu in addition to Y. The results suggest that the unique square-planar Cu atoms, each surrounded by four or six oxygen atoms, are crucial to the superconductivity of oxides in general. In particular, the high Tc of ABa2Cu3O(6 + x) is attributed mainly to the quasi-two-dimensional assembly of the CuO2-Ba-CuO(2 + x)Ba-CuO2 layers sandwiched between two A layers, with particular emphasis in the CuO(2 + x) layers. Higher-Tc oxides are predicted for compounds with bigger assemblies of CuO2 layers coupled by Ba layers.

  9. Superconductivity above 90 K in the square-planar compound system ABa2Cu3O(6 + x) with A = Y, La, Nd, Sm, Eu, Gd, Ho, Er, and Lu

    NASA Technical Reports Server (NTRS)

    Hor, P. H.; Meng, R. L.; Wang, Y. Q.; Gao, L.; Huang, Z. J.

    1987-01-01

    Superconductivity has been found in the 90-K range in ABa2Cu3O(6 + x) with A = La, Nd, Sm, Eu, Gd, Ho, Er, and Lu in addition to Y. The results suggest that the unique square-planar Cu atoms, each surrounded by four or six oxygen atoms, are crucial to the superconductivity of oxides in general. In particular, the high Tc of ABa2Cu3O(6 + x) is attributed mainly to the quasi-two-dimensional assembly of the CuO2-Ba-CuO(2 + x)Ba-CuO2 layers sandwiched between two A layers, with particular emphasis in the CuO(2 + x) layers. Higher-Tc oxides are predicted for compounds with bigger assemblies of CuO2 layers coupled by Ba layers.

  10. Adsorption study of a macro-RAFT agent onto SiO2-coated Gd2O3:Eu3+ nanorods: Requirements and limitations

    NASA Astrophysics Data System (ADS)

    Zou, Hua; Melro, Liliana; de Camargo Chaparro, Thaissa; de Souza Filho, Isnaldi Rodrigues; Ananias, Duarte; Bourgeat-Lami, Elodie; dos Santos, Amilton Martins; Barros-Timmons, Ana

    2017-02-01

    The use of a macromolecular RAFT (macro-RAFT) agent to encapsulate anisotropic nano-objects via emulsion polymerization is an emerging route to prepare polymer/inorganic colloidal nanocomposites. However, a number of requirements have to be fulfilled. This work aims at highlighting the effects of the preparative procedure and dispersion method on the amount of macro-RAFT agent adsorbed onto SiO2-coated Gd2O3:Eu3+ nanorods. The adsorption of macro-RAFT agent was studied using the depletion method with UV-vis spectrophotometry. Measurements were performed at a fixed concentration of nanorods and varying concentrations of the macro-RAFT agent in aqueous dispersion at room temperature. The adsorption isotherms showed that for the same initial macro-RAFT agent concentration, the highest adsorption capacity of the macro-RAFT agent on nanorods was usually achieved for non-calcined thin SiO2-coated nanorods under mild bath sonication.

  11. Investigation of crystallinity and planar defects in the Si nanowires grown by vapor-liquid-solid mode using indium catalyst for solar cell applications

    NASA Astrophysics Data System (ADS)

    Ajmal Khan, Muhammad; Ishikawa, Yasuaki; Kita, Ippei; Tani, Ayumi; Yano, Hiroshi; Fuyuki, Takashi; Konagai, Makoto

    2016-01-01

    Stacking-fault-free and planar defect (twinning plane)-free In-catalyzed Si nanowires (NWs) are essential for carrier transport and nanoscale device applications. In this article, In-catalyzed, vertically aligned, and cone-shaped Si NWs on Si(111) were grown successfully, in the vapor-liquid-solid (VLS) mode. In particular, the influences of substrate temperature (TS) and cooling rate (ΔTS/Δt) on the formation of planar defects, twinning planes along the [112] direction, and stacking faults in Si NWs were investigated. When TS was decreased from 600 °C to room temperature at a rate of 100 °C/240 s after Si NW growth, twinning plane defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed. Finally, one simple model was proposed to explain the stacking fault formation as well as Si NW length limitation due to the In-nanoparticle (In-NP) migration, and root causes of the twinning plane defects in the Si-NWs.

  12. Annealing influence on the magnetostructural transition in Gd5Si1.3Ge2.7 thin films

    SciTech Connect

    Pires, A. L.; Belo, J. H.; Gomes, I. T.; Hadimani, R. L.; Jiles, D. C.; Fernandes, L.; Tavares, P. B.; Araújo, J. P.; Lopes, A. M. L.; Pereira, A. M.

    2015-05-19

    Due to the emerging cooling possibilities at the micro and nanoscale, such as the fast heat exchange rate, the effort to synthesize and optimize the magnetocaloric materials at these scales is rapidly growing. Here, we report the effect of different thermal treatments on Gd5Si1.3Ge2.7 thin film in order to evaluate the correlation between the crystal structure, magnetic phase transition and magnetocaloric effect. For annealing temperatures higher than 500ºC, the samples showed a typical paramagnetic behavior. On the other hand, thermal treatments below 500ºC promoted the suppression of the magnetostructural transition at 190 K, while the magnetic transition around 249 K is not affected. This magnetostructural transition extinction was reflected in the magnetocaloric behavior and resulted in a drastic decrease in the entropy change peak value (of about 68%). An increase in TC was reported, proving that at the nanoscale, heat treatments may be a useful tool to optimize the magnetocaloric properties in Gd5(SixGe1-x)4 thin films.

  13. Temperature and field induced strain measurements in single crystal Gd5Si2Ge2

    SciTech Connect

    McCall, S. K.; Nersessian, N.; Carman, G. P.; Pecharsky, V. K.; Schlagel, D. L.; Radousky, H. B.

    2016-03-29

    The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of –8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of –8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Furthermore, using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

  14. Toward Design Principles for Diffusionless Transformations: The Frustrated Formation of Co-Co Bonds in a Low-Temperature Polymorph of GdCoSi2.

    PubMed

    Vinokur, Anastasiya I; Fredrickson, Daniel C

    2016-06-20

    Diffusionless (or displacive) phase transitions allow inorganic materials to show exquisite responsiveness to external stimuli, as is illustrated vividly by the superelasticity, shape memory, and magnetocaloric effects exhibited by martensitic materials. In this Article, we present a new diffusionless transition in the compound GdCoSi2, whose origin in frustrated bonding points toward generalizable design principles for these transformations. We first describe the synthesis of GdCoSi2 and the determination of its structure using single crystal X-ray diffraction. While previous studies based on powder X-ray diffraction assigned this compound to the simple CeNi1-xSi2 structure type (space group Cmcm), our structure solution reveals a superstructure variant (space group Pbcm) in which the Co sublattice is distorted to create zigzag chains of Co atoms. DFT-calibrated Hückel calculations, coupled with a reversed approximation Molecular Orbital (raMO) analysis, trace this superstructure to the use of Co-Co isolobal bonds to complete filled 18 electron configurations on the Co atoms, in accordance with the 18-n rule. The formation of these Co-Co bonds is partially impeded, however, by a small degree of electron transfer from Si-based electronic states to those with Co-Co σ* character. The incomplete success of Co-Co bond creation suggests that these interactions are relatively weak, opening the possibility of them being overcome by thermal energy at elevated temperatures. In fact, high-temperature powder and single crystal X-ray diffraction data, as well as differential scanning calorimetry, indicate that a reversible Pbcm to Cmcm transition occurs at about 380 K. This transition is diffusionless, and the available data point toward it being first-order. We expect that similar cases of frustrated interactions could be staged in other rare earth-transition metal-main group phases, providing a potentially rich source of compounds exhibiting diffusionless transformations

  15. Highly integrated planar lightwave circuits based on plasmonic and Si nano-waveguides

    NASA Astrophysics Data System (ADS)

    He, Sailing; Han, Zhanghua; Liu, Liu; Dai, Daoxin

    2006-09-01

    Planar lightwave circuits (PLC) based on nanophotonic waveguides are becoming more and more attractive because of their ultrasmall sizes and possibility for realizing large scale monolithic integration with a very high integration density. In this paper we discuss two attractive types of nanophotonic waveguides based on dielectrics or metals. For the dielectric type, a silicon-on-insulator (SOI) strip waveguide is considered, and ultra-compact photonic integrated devices such as polarization-insensitive arrayed waveguide grating (de)multiplexers are obtained. Based on the fact that light can be confined tightly in a single interface between a metal and dielectric, a surface plasmon (SP) waveguide can offer a tight confinement for the light field. The cross-sectional size of an SP waveguide could be pushed down to tens of nanometers, i.e. beyond the diffraction limit. An accurate anaylysis for an SP waveguide formed by a dielectric nano-trench in a metal is presented. A novel subwavelength index-guided multimode plasmonic waveguide is introduced and an ultra-compact MMI power splitter is designed.

  16. Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices

    NASA Astrophysics Data System (ADS)

    Yang, Tongtong; Bai, Song; Huang, Runhua

    2017-04-01

    Numerical simulations on the optimization of junction termination extension (JTE) have been performed. Various termination techniques have been applied and simulated in this paper, such as single-zone JTE (S-JTE), multi-zone JTE (M-JTE), and space-modulated JTE (SM-JTE). A completely novel and efficient method is demonstrated in this paper to determine total length of SM-JTE, and it is verified through simulation results. The simulation results show that the SM-JTE could provide a protection efficiency (defined in Section 2) of 95.2%, which is much higher than that of M-JTE (82.4%) and S-JTE (64.7%). Based on the fabricated MOSFETs, the interface charge density is extracted and the approximate range of charge density has been determined. The influences of different interface charge densities have been investigated for the three termination techniques respectively. According to the previous reports, the JTE is quite sensitive to the implanted dose, so the blocking capability of each termination structure with different implanted doses is also simulated. The results show that when interface charge is considered, the SM-JTE always shows an enormous advantage over the other two junction termination structures, however the interface charge densities varied. The space-modulated JTE is also applicable to the power planar devices such as MOSFETs and IGBTs, which would provide a very promising lower fabrication cost.

  17. Dielectric layers SiO2: TiO2 produced using the sol-gel technology for the application in planar sensors

    NASA Astrophysics Data System (ADS)

    Karasinski, Pawel

    2004-09-01

    The paper presents the results of investigations involving the influence of drying time and annealing temperature on refractive index and thickness of two-component dielectric layers SiO2:TiO2 produced with the application of sol-gel technology. The production technology and the method for the determination of parameters of the produced layers has been discussed. The results of theoretical analysis of planar refractometer has been presented in the system of difference interferometer produced with the application of the elaborated planar waveguides.

  18. Enhanced protein loading on a planar Si(111)-H surface with second generation NTA

    NASA Astrophysics Data System (ADS)

    Liu, Xiang; Han, Huan-Mei; Liu, Hong-Bo; Xiao, Shou-jun

    2010-08-01

    A Si(111)-H surface was modified via a direct reaction between Si-H and 1-undecylenic acid (UA) under microwave irradiation to form molecular monolayers with terminal carboxyl groups. After esterifying carboxylic acid being esterified with N-hydroxysuccinimide (NHS), aminobutyl nitrilotriacetic acid (ANTA) was bound to the silicon surface through amidation (pH = 8.0) between its primary amino group and NHS-ester, producing nitrilotriacetic acid (NTA) anions. Then hexa-histidine tagged thioredoxin-urodilatin (his-tagged protein) and FITC-labeled hexa-histidine tagged thioredoxin-urodilatin (FITC-his-tagged protein) can be anchored after NTA was coordinated with Ni 2+. Furthermore, the NTA-terminated chip was acidified with 0.1 M HCl and subsequently esterified with NHS and then amidated with ANTA again to produce a second generation NTA. Thus the surface density of nitrilotriacetic acid anions was improved and resultantly that of anchored proteins was also enhanced through the iterative reactions. Both multiple transmission-reflection infrared spectroscopy (MTR-IR) and fluorescence scanning measurements demonstrated a proximate 1.63 times of anchored proteins on the second generation NTA/Ni 2+ as that on the first generation NTA/Ni 2+ monolayer.

  19. CeNi3-type rare earth compounds: crystal structure of R3Co7Al2 (R=Y, Gd-Tm) and magnetic properties of {Gd-Er}3Co7Al2, {Tb, Dy}3Ni8Si and Dy3Co7.68Si1.32

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Yapaskurt, V. O.; Nirmala, R.; Quezado, S.; Malik, S. K.

    2017-03-01

    The crystal structure of new CeNi3-type {Y, Gd-Tm}3Co7Al2 (P63/mmc. N 194, hP24) compounds has been established using powder X-ray diffraction studies. The magnetism of Tb3Ni8Si and Dy3Ni8Si is dominated by rare earth sublattice and the magnetic properties of R3Co7Al2 (R =Gd-Er) and Dy3Co7.68Si1.32 are determined by both rare earth and cobalt sublattices. Magnetization data indicate ferromagnetic ordering of {Tb, Dy}3Ni8Si at 32 K and 21 K, respectively. Gd3Co7Al2 and Tb3Co7Al2 exhibit ferromagnetic ordering at 309 K and 209 K, respectively, whereas Dy3Co7Al2, Ho3Co7Al2, Er3Co7Al2 and Dy3Co7.68Si1.32 show a field dependent ferromagnetic-like ordering at 166 K, 124 K, 84 K and 226 K, respectively followed by a low temperature transition at 34 K for Dy3Co7Al2, 18 K for Ho3Co7Al2, 56 K for Er3Co7Al2, 155 K and 42 K for Dy3Co7.68Si1.32. Among these compounds, Dy3Ni8Si shows largest magnetocaloric effect (isothermal magnetic entropy change) of -11.6 J/kg·K at 18 K in field change of 50 kOe, whereas Tb3Co7Al2, Dy3Co7Al2 and Dy3Co7.68Si1.32 exhibit best permanent magnet properties in the temperature range of 2-5 K with remanent magnetization of 11.95 μB/fu, 12.86 μB/fu and 14.4 μB/fu, respectively and coercive field of 3.0 kOe, 1.9 kOe and 4.4 kOe, respectively.

  20. In Vivo Immunotoxicity of SiO2@(Y0.5Gd0.45Eu0.05)2O3 as Dual-Modality Nanoprobes

    PubMed Central

    Tian, Xiumei; Li, Ermao; Yang, Fanwen; Peng, Ye; Zhu, Jixiang; He, Fupo; Chen, Xiaoming

    2014-01-01

    We have successfully synthesized SiO2@(Y0.5Gd0.45Eu0.05)2O3 nanocomposites as a potential dual-modality nanoprobe for molecular imaging in vitro. However, their immunotoxicity assessment in vivo remains unknown. In this article, the in vitro biocompatibility of our dual-modality nanoprobes was assayed in terms of cell viability and apoptosis. In vivo immunotoxicity was investigated by monitoring the generation of reactive oxygen species (ROS), cluster of differentiation (CD) markers and cytokines in Balb/c mice. The data show that the in vitro biocompatibility was satisfactory. In addition, the immunotoxicity data revealed there are no significant changes in the expression levels of CD11b and CD71 between the nanoprobe group and the Gd in a diethylenetriaminepentaacetic acid (DTPA) chelator (Gd-DTPA) group 24 h after injection in Balb/c mice (p > 0.05). Importantly, there are significant differences in the expression levels of CD206 and CD25 as well as the secretion of IL-4 and the generation of ROS 24 h after injection (p < 0.05). Transmission electron microscopy (TEM) images showed that few nanoprobes were localized in the phagosomes of liver and lung. In conclusion, the toxic effects of our nanoprobes may mainly result from the aggregation of particles in phagosomes. This accumulation may damage the microstructure of the cells and generate oxidative stress reactions that further stimulate the immune response. Therefore, it is important to evaluate the in vivo immunotoxicity of these rare earth-based biomaterials at the molecular level before molecular imaging in vivo. PMID:25105724

  1. In vivo immunotoxicity of SiO2@(Y0.5Gd0.45Eu0.05)2O3 as dual-modality nanoprobes.

    PubMed

    Tian, Xiumei; Li, Ermao; Yang, Fanwen; Peng, Ye; Zhu, Jixiang; He, Fupo; Chen, Xiaoming

    2014-08-07

    We have successfully synthesized SiO2@(Y0.5Gd0.45Eu0.05)2O3 nanocomposites as a potential dual-modality nanoprobe for molecular imaging in vitro. However, their immunotoxicity assessment in vivo remains unknown. In this article, the in vitro biocompatibility of our dual-modality nanoprobes was assayed in terms of cell viability and apoptosis. In vivo immunotoxicity was investigated by monitoring the generation of reactive oxygen species (ROS), cluster of differentiation (CD) markers and cytokines in Balb/c mice. The data show that the in vitro biocompatibility was satisfactory. In addition, the immunotoxicity data revealed there are no significant changes in the expression levels of CD11b and CD71 between the nanoprobe group and the Gd in a diethylenetriaminepentaacetic acid (DTPA) chelator (Gd-DTPA) group 24 h after injection in Balb/c mice (p>0.05). Importantly, there are significant differences in the expression levels of CD206 and CD25 as well as the secretion of IL-4 and the generation of ROS 24 h after injection (p<0.05). Transmission electron microscopy (TEM) images showed that few nanoprobes were localized in the phagosomes of liver and lung. In conclusion, the toxic effects of our nanoprobes may mainly result from the aggregation of particles in phagosomes. This accumulation may damage the microstructure of the cells and generate oxidative stress reactions that further stimulate the immune response. Therefore, it is important to evaluate the in vivo immunotoxicity of these rare earth-based biomaterials at the molecular level before molecular imaging in vivo.

  2. Sub-micron, planarized, Nb-AlO(x)-Nb Josephson process for 125 mm wafers developed in partnership with Si technology

    NASA Astrophysics Data System (ADS)

    Ketchen, M. B.; Pearson, D.; Kleinsasser, A. W.; Hu, C.-K.; Smyth, M.; Logan, J.; Stawiasz, K.; Baran, E.; Jaso, M.; Ross, T.

    1991-11-01

    A new planarized all-refractory technology was demonstrated for low-Tc superconductivity (PARTS). With the exception of the Nb-AlO(x)-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach made it possible to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique Josephson junctions ranging in size from 0.5-100 sq microns were fabricated. Junction quality is excellent with the figure of merit Vm typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.

  3. Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    SciTech Connect

    Schmid, H. Borg, M.; Moselund, K.; Cutaia, D.; Riel, H.; Gignac, L.; Breslin, C. M.; Bruley, J.

    2015-06-08

    III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.

  4. Dielectric functions of solution-processed GdAlO(x)/Si films measured with vacuum ultra-violet spectroscopic ellipsometry.

    PubMed

    Kim, Tae Jung; Park, Han Gyeol; Lee, Sang Hyub; Hwang, Soo Min; Hwang, Soon Yong; Kim, Jun Young; Choi, Junho; Kang, Yu Ri; Kim, Young Dong; Joo, Jinho

    2014-11-01

    The dielectric functions of amorphous GdAlO(x) (GAO) films grown by the sol-gel process were investigated from 1.12 to 8.5 eV as a function of annealing temperature using spectroscopic ellipsometry (SE). A GAO precursor sol with a molar ratio of Gd:Al = 1:1 was prepared. Thin layers were formed by spin-coating on p-type Si substrates. The layers were sintered at 400 degrees C for 2 h in an ambient atmosphere, then rapid-thermal-annealed (RTA) at 700 or 800 degrees C for 1 min in an N2 ambient. The optical properties were measured via variable angle SE, at room temperature. The angle of incidence was varied from 50 to 70 degrees in 10 degrees steps. The dielectric functions of the resulting GAO films were obtained from the measured pseudodielectric functions by multilayer-structure calculations using the Tauc-Lorentz (TL) dispersion relation. The real and imaginary parts of the dielectric functions were found to increase with increasing RTA temperature. The film thicknesses and TL parameters (threshold energy E(g) and broadening C) decrease with increasing RTA temperature.

  5. Enhanced upconversion multicolor and white light luminescence in SiO2-coated lanthanide-doped GdVO4 hydrothermal nanocrystals

    NASA Astrophysics Data System (ADS)

    Calderón-Villajos, Rocío; Zaldo, Carlos; Cascales, Concepción

    2012-12-01

    Tetragonal zircon-type codoped Yb, Ln-GdVO4 (Ln=Tm, Ho, Er) upconverting nanocrystals with square and rectangular sections were prepared through an efficient low-temperature hydrothermal synthesis. Further processing that combined annealing at 600 °C followed by coating of the surface with a uniform 5 nm-shell of SiO2 resulted in a significant improvement of the intensity of the upconverted emitted visible light following near-infrared (˜980 nm) diode laser excitation with respect to raw hydrothermal nanocrystals. Strong tunable color and bright visible light composed of red-green, blue and green emissions from Ho3+, Tm3+ and Er3+, respectively, were generated by adjusting the Yb-Ln composition of these silica-coated nanocrystals. Based on calculations of CIE color coordinates, nearly ideal white upconversion light was achieved for samples of composition Gd0.829Yb0.15Tm0.01Ho0.009Er0.002VO4.

  6. Preparation of translucent Gd2Si2O7:Ce polycrystalline thin plates and their scintillation performance for α-particles

    NASA Astrophysics Data System (ADS)

    Nishikata, Mami; Ueda, Aki; Higuchi, Mikio; Kaneko, Junichi H.; Tsubota, Youichi; Ishibashi, Hiroyuki

    2015-07-01

    Translucent Gd2Si2O7:Ce (GPS:Ce) polycrystalline plates were prepared via liquid-phase sintering using SiO2 as a self-flux, and their scintillation performances for α-particles were investigated. Dense sintered compacts comprising large grains, some of which were larger than 100 μm in diameter, were successfully prepared by sintering at 1690 °C for 100 h. The best result was obtained with the powder comprising only <40 μm particles. Any combination of powders of <40 μm and <15 μm resulted in inhomogeneous structures with smaller grains of about 50 μm. A translucent GPS:Ce thin plate was fabricated by grinding the sintered compact that contained excess SiO2 of 8 mol%. Since the plate was composed of large grains, scattering at the grain boundaries was effectively suppressed and many of the grains virtually act as single crystals when the plate thickness was less than 100 μm. Therefore, the decrease in the plate thickness brought increase in the total transmission, and light yield and energy resolution were consequently improved. When the plate thickness was 50 μm, light yield was 82% as compared with that of a GPS:Ce single crystal as a reference, and energy resolution attained to 13%.

  7. Growth, spectroscopy and lasing of the Yb-doped monoclinic Gd2SiO5 in the prospect of hydrogen laser cooling with Lyman-α radiation

    NASA Astrophysics Data System (ADS)

    Cabaret, L.; Robert, J.; Lebbou, K.; Brenier, A.; Cabane, H.

    2016-12-01

    We have grown good optical quality 10% Yb-doped Gd2SiO5 monocrystal by the Czochralski technique. The Yb segregation coefficient was measured to be 0.747. In agreement with the monoclinic symmetry of the host, the Yb fluorescence extrema were found to deviate from the Nm and Ng principal axes and a fourth spectroscopic parameter representing the rotation of the fluorescence distribution was introduced for a full description. Diode pumped laser operation at Brewster incidence was demonstrated to be significantly more efficient if the lasing propagation corresponds to the maximum fluorescence inside the crystal. We obtained a laser emission tunable between 1079 and 1100 nm, showing that our crystal is the best choice for the application to the production of QCW Lyman-α radiation by resonant four-wave-mixing in mercury vapor.

  8. X-ray powder diffraction of high-absorption materials at the XRD1 beamline off the best conditions: Application to (Gd, Nd)5Si4 compounds

    NASA Astrophysics Data System (ADS)

    Carvalho, A. M. G.; Nunes, R. S.; Coelho, A. A.

    2017-03-01

    Representative compounds of the new family of magnetic materials Gd5-xNdxSi4 were analyzed by X-ray diffraction at the XRD1 beamline at LNLS. To reduce X-ray absorption, thin layers of the powder samples were mounted outside the capillaries and measured in Debye-Scherrer geometry as usual. The X-ray diffraction analyses and the magnetometry results indicate that the behavior of the magnetic transition temperature as a function of Nd content may be directly related to the average of the four smallest interatomic distances between different rare earth sites of the majority phase of each compound. The quality and consistency of the results show that the XRD1 beamline is able to perform satisfactory X-ray diffraction experiments on high-absorption materials even off the best conditions.

  9. Nd:(Gd0.3Y0.7)2SiO5 crystal: A novel efficient dual-wavelength continuous-wave medium

    NASA Astrophysics Data System (ADS)

    Xu, Xiaodong; Di, Juqing; Zhang, Jian; Tang, Dingyuan; Xu, Jun

    2016-05-01

    Efficient dual-wavelength continuous-wave (CW) and passively Q-switched laser operation of Nd:(Gd0.3Y0.7)2SiO5 crystal were investigated for the first time to our knowledge. Maximum CW output power of 2.3 W was obtained under the absorbed pump power of 4.6 W, corresponding to the slope efficiency of 55%. Dual-wavelength CW laser with respective wavelengths around 1074 nm and 1078 nm were achieved. With Cr4+:YAG as the saturable absorber, passive Q-switched performance was obtained. The slope efficiency of passively Q-switched operation was 45%. The shortest pulse width, the corresponding pulse energy and peak power were calculated to be 13.1 ns, 50.2 μJ and 3.8 kW, respectively.

  10. Investigation of continuous wave and pulsed laser performance based on Nd3+:Gd0.6Y1.4SiO5 crystal

    NASA Astrophysics Data System (ADS)

    Feng, Chao; Liu, Zhaojun; Cong, Zhenhua; Shen, Hongbin; Li, Yongfu; Wang, Qingpu; Fang, Jiaxiong; Xu, Xiaodong; Xu, Jun; Zhang, Xingyu

    2015-12-01

    We systematically investigated a laser diode (LD) pumped Nd:GYSO (Nd3+:Gd0.6Y1.4SiO5) laser. The output power of the continuous wave laser was as high as 3.5 W with a slope efficiency of 31.8%. In the Q-switched operation; the laser exhibited dual-wavelengths output (1073.6 nm and 1074.7 nm) synchronously with a Cr4+:YAG as the saturable absorber (SA). Additionally, a passively mode-locked laser was demonstrated using a semiconductor SA mirror with a maximum average output power of 510 mW at a central wavelength of 1074 nm, while the pulse width of the laser was as short as 5 ps. Our experiment proved that the Nd:GYSO mixed crystal was a promising material for a solid-state laser.

  11. Electron spin resonance and magnetic characterization of the Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}

    SciTech Connect

    Pires, M.J.M.; Carvalho, A. Magnus G.; Gama, S.; Silva, E.C. da; Coelho, A.A.; Mansanares, A.M.

    2005-12-01

    Electron spin resonance was applied on samples of Gd{sub 5.09}Ge{sub 2.03}Si{sub 1.88}. The results are discussed under the scope of magnetization measurements, optical metallography, and wavelength dispersive spectroscopy. Polycrystalline arc-melted samples submitted to different heat treatments were investigated. The correlation of the electron spin resonance and magnetization results permitted a characterization of the present phases and their transitions. Two coexisting phases in the temperature range between two phase transitions have been identified and associated to distinct crystallographic phases. Additionally, the magnetic moment at high temperatures has been estimated from the measured effective g factor. A peak value of 21.5 J/kg K for the magnetocaloric effect was obtained for a sample heat treated at 1500 deg. C for 16 h.

  12. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (LuxGd1-x)2SiO5 single crystals grown by the Czochralski method

    NASA Astrophysics Data System (ADS)

    GŁowacki, MichaŁ; Dominiak-Dzik, Grażyna; Ryba-Romanowski, Witold; Lisiecki, RadosŁaw; Strzęp, Adam; Runka, Tomasz; Drozdowski, MirosŁaw; Domukhovski, Viktor; Diduszko, Ryszard; Berkowski, Marek

    2012-02-01

    The (LuxGd0.995-xSm0.005)2SiO5 single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm3+ ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu3+ content in (LuxGd0.995-xSm0.005)2SiO5 solid solution crystals induces the phase transition from C2/c (Lu2SiO5) to P21/c (Gd2SiO5) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15

  13. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  14. Luminescence characteristic of RE (RE = Pr, Sm, Eu, Tb, Dy) and energy levels of lanthanide ions in Gd5Si3O12N

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi-Jun; Yang, Woochul

    2017-10-01

    Polycrystalline Gd5Si3O12N: RE (RE = Pr, Sm, Eu, Tb and Dy) phosphors have been synthesized via a solid-state reaction method at high temperature, and their photoluminescence properties were studied. The absorption peak at about 230 nm is attributed to the host absorption. For the Pr3+-doped sample, the typical excitation lines located at 273 nm originating from the 8S7/2 → 6IJ (J = 5/2, 7/2) transitions of the Gd3+ ions were observed in the excitation spectra. Upon excitation at 227 nm UV light, the 4f15d → 4f2 emission band (350-450 nm) and typical 4f2 → 4f2 emission lines (450-700 nm) assigned to Pr3+ were observed. The Sm3+-doped sample exhibits a bright red emission owing to the 4G5/2 → 6HJ (J = 5/2, 7/2 and 9/2) transitions. However, the charge transfer band of Sm3+ was not observed in the excitation spectrum. There is a broad band from 200 to 350 nm originating from the charge transfer transition (CT) of the Eu3+ (O2-/N3- → Eu3+) in the excitation spectra, and the strongest peak in the emission spectra located at 615 nm is due to the electric-dipole 5D0 → 7F2 transition of Eu3+. For the Tb3+-doped sample, it shows 5D3 →7FJ (J = 5, 4, 3, 2) blue line emissions and 5D4 → 7FJ (J = 6, 5, 4, 3) green line emissions under the excitation of Tb3+. The Dy3+-activated sample upon excitation at 349 and 386 nm UV light shows blue-green and orange-red emission lines originating from 4F9/2 → 6HJ (J = 15/2, 13/2) transitions. In addition, the energy transfer from the host lattice to the luminescence activators (i.e. Pr3+, Sm3+, Eu3+, Tb3+, Dy3+) has been confirmed. In addition, the energy level diagram including the 4f and 5d energy levels of all Ln2+ and Ln3+ ions relative to the valence and conduction band of Gd5Si3O12N were constructed and discussed.

  15. Toward Design Principles for Diffusionless Transformations: The Frustrated Formation of Co–Co Bonds in a Low-Temperature Polymorph of GdCoSi 2

    SciTech Connect

    Vinokur, Anastasiya I.; Fredrickson, Daniel C.

    2016-06-20

    Diffusionless (or displacive) phase transitions allow inorganic materials to show exquisite responsiveness to external stimuli, as is illustrated vividly by the superelasticity, shape memory, and magnetocaloric effects exhibited by martensitic materials. In this Article, we present a new diffusionless transition in the compound GdCoSi2, whose origin in frustrated bonding points toward generalizable design principles for these transformations. We first describe the synthesis of GdCoSi2 and the determination of its structure using single crystal X-ray diffraction. While previous studies based on powder X-ray diffraction assigned this compound to the simple CeNi1–xSi2 structure type (space group Cmcm), our structure solution reveals a superstructure variant (space group Pbcm) in which the Co sublattice is distorted to create zigzag chains of Co atoms. DFT-calibrated Hückel calculations, coupled with a reversed approximation Molecular Orbital (raMO) analysis, trace this superstructure to the use of Co–Co isolobal bonds to complete filled 18 electron configurations on the Co atoms, in accordance with the 18–n rule. The formation of these Co–Co bonds is partially impeded, however, by a small degree of electron transfer from Si-based electronic states to those with Co–Co σ* character. The incomplete success of Co–Co bond creation suggests that these interactions are relatively weak, opening the possibility of them being overcome by thermal energy at elevated temperatures. In fact, high-temperature powder and single crystal X-ray diffraction data, as well as differential scanning calorimetry, indicate that a reversible Pbcm to Cmcm transition occurs at about 380 K. This transition is diffusionless, and the available data point toward it being first-order. We expect that similar cases of frustrated interactions could be staged in other rare earth–transition metal–main group phases, providing a potentially rich

  16. Crystal structure and magnetic properties of novel R{sub 3}Co{sub 2.2}Si{sub 1.8} compounds (R=Y, Gd-Tm)

    SciTech Connect

    Morozkin, A.V.; Yao, Jinlei; Mozharivskyj, Y.

    2012-08-15

    The crystal structure of new ternary Dy{sub 3}Co{sub 2.2}Si{sub 1.8} compound has been established using single crystal X-ray diffraction, and those of R{sub 3}Co{sub 2.2}Si{sub 1.8} phases (R=Y, Gd-Tm) phases have been verified through the powder diffraction techniques. The Dy{sub 3}Co{sub 2.2}Si{sub 1.8} structure is a new structure type, which is obtained from the Er{sub 3}Ge{sub 4} with an ordered Er{sub 3}Ge{sub 4}-type structure (space group Cmcm) one by coloring the two Ge sites, 4a and 4c, with Si and the 8f site with Co atoms. Tb{sub 3}Co{sub 2.2}Si{sub 1.8}, Dy{sub 3}Co{sub 2.2}Si{sub 1.8}, Ho{sub 3}Co{sub 2.2}Si{sub 1.8} and Er{sub 3}Co{sub 2.2}Si{sub 1.8} compounds display ferromagnetic-type ordering. - Graphical abstract: The novel R{sub 3}Co{sub 2.2}Si{sub 1.8} compounds (R=Y, Gd-Tm) adopt the new structure type, the ordered variant of Er{sub 3}Ge{sub 4}-type structure Magnetic studies on {l_brace}Tb, Dy, Ho, Er{r_brace}{sub 3}Co{sub 2.2}Si{sub 1.8} suggest that their magnetic interactions are primarily ferromagnetic in nature. Highlights: Black-Right-Pointing-Pointer The novel {l_brace}Y, Gd-Tm{r_brace}{sub 3}Co{sub 2.2}Si{sub 1.8} compounds adopt the Dy{sub 3}Co{sub 2.2}Si{sub 1.8} structure type, Black-Right-Pointing-Pointer The Dy{sub 3}Co{sub 2.2}Si{sub 1.8} type is ordered variant of Er{sub 3}Ge{sub 4} type structure. Black-Right-Pointing-Pointer {l_brace}Gd-Tm{r_brace}{sub 3}Co{sub 2.2}Si{sub 1.8} compounds are primarily ferromagnetic in nature.

  17. (1)H relaxivity of water in aqueous suspensions of Gd(3+)-loaded NaY nanozeolites and AlTUD-1 mesoporous material: the influence of Si/Al ratio and pore size.

    PubMed

    Norek, Małgorzata; Neves, Isabel C; Peters, Joop A

    2007-07-23

    The results of a (1)H nuclear magnetic relaxation dispersion (NMRD) and EPR study on aqueous suspensions of Gd(3+)-loaded NaY nanozeolites and AlTUD-1 mesoporous material are described. Upon increase of the Si/Al ratio from 1.7 to 4.0 in the Gd(3+)-loaded zeolites, the relaxation rate per mM Gd(3+) (r1) at 40 MHz and 25 degrees C increases from 14 to 27 s(-)1 mM(-1). The NMRD and EPR data were fitted with a previously developed two-step model that considers the system as a concentrated aqueous solution of Gd(3+) in the interior of the zeolite that is in exchange with the bulk water outside the zeolite. The results show that the observed increase in relaxivity can mainly be attributed to the residence lifetime of the water protons in the interior of the material, which decreased from 0.3 to 0.2 micros, upon the increase of the Si/Al ratio. This can be explained by the decreased interaction of water with the zeolite walls as a result of the increased hydrophobicity. The importance of the exchange rate of water between the inside and the outside of the material was further demonstrated by the relatively high relaxivity (33 s(-1) mM(-1) at 40 MHz, 25 degrees C) observed for a suspension of the Gd(3+)-loaded mesoporous material AlTUD-1. Unfortunately, Gd(3+) leaches rather easily from that material, but not from the Gd(3+)-loaded NaY zeolites, which may have potential as contrast agents for magnetic resonance imaging.

  18. Combinatorial screening of luminescent and structural properties in a Ce(3+)-doped Ln-Al-Si-O-N (Ln = Y, La, Gd, Lu) system: the discovery of a novel Gd3Al(3+x)Si(3-x)O(12+x)N(2-x):Ce(3+) phosphor.

    PubMed

    Park, Woon Bae; Singh, Satendra Pal; Kim, Minseuk; Sohn, Kee-Sun

    2015-02-16

    The discovery of novel phosphors for use in light emitting diodes (LED) has gained in significance because LED-based solid-state lighting applications now attract a great deal of attention for energy savings and environmental concerns. Recent research trends have centered on the discovery of novel phosphors, not on slight variations of well-known phosphors. In a real sense, novelty goes beyond simple variations or improvements in existing phosphors. A brilliant strategy for the discovery of novel phosphors is to introduce an appropriate activator to existing inorganic compounds. These compounds have structures that are well-defined in crystallographic structure databases, but they have never been considered as a phosphor host. Another strategy is to discover new host compounds with structures that cannot be found in existing databases. We have simultaneously pursued both strategies by employing metaheuristics-assisted combinatorial material search techniques. In the present investigation, we screened a search space consisting of Ln-Al-Si-O-N (Ln = Y, La, Gd, Lu), and thereby we discovered a blue-light-emitting novel phosphor, Gd3Al(3+x)Si(3-x)O(12+x)N(2-x):Ce(3+), with a monoclinic system in the C2 space group--a potential candidate for UV-LED applications.

  19. Synthesis and properties of new multinary silicides R5Mg5Fe4Al(x)Si(18-x) (R = Gd, Dy, Y, x ≈ 12) grown in Mg/Al flux.

    PubMed

    Ma, Xiaowei; Chen, Banghao; Latturner, Susan E

    2012-06-04

    Reactions of iron, silicon, and R = Gd, Dy, or Y in 1:1 Mg/Al mixed flux produce well-formed crystals of R(5)Mg(5)Fe(4)Al(x)Si(18-x) (x ≈ 12). These phases have a new structure type in tetragonal space group P4/mmm (a = 11.655(2) Å, c = 4.0668(8) Å, Z = 1 and R(1) = 0.0155 for the Dy analogue). The structure features two rare earth sites and one iron site; the latter is in monocapped trigonal prismatic coordination surrounded by silicon and aluminum atoms. Siting of Al and Si was investigated using bond length analysis and (27)Al and (29)Si MAS NMR studies. The magnetic properties are determined by the R elements, with the Gd and Dy analogues exhibiting antiferromagnetic ordering at T(N) = 11.9 and 6.9 K respectively; both phases exhibit complex metamagnetic behavior with varying field.

  20. Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

    NASA Astrophysics Data System (ADS)

    Pietsch, Matthias; Jäckle, Sara; Christiansen, Silke

    2014-06-01

    We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration ( N D). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages ( V oc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N D leads to an increase of V oc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N D is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.

  1. Multifunctional SiO2@Gd2O3:Yb/Tm hollow capsules: controllable synthesis and drug release properties.

    PubMed

    Yang, Guixin; Lv, Ruichan; Gai, Shili; Dai, Yunlu; He, Fei; Yang, Piaoping

    2014-10-20

    A series of hollow and luminescent capsules have been fabricated by covering luminescent Gd2O3:Yb/Tm nanoparticles on the surface of uniform hollow mesoporous silica capsules (HMSCs), which were obtained from an etching process using Fe3O4 as hard templates. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), up-conversion (UC) fluorescence spectra, and N2 adsorption-desorption were used to characterize these samples. It is found that the as-prepared products have mesoporous pores, large specific surface, and high dispersity. In particular, the size, shape, surface area, and interior space of the composites can be finely tuned by adjusting the size and morphology of the magnetic cores. Under 980 nm near-infrared (NIR) laser irradiation, the composites show characteristic blue UC emissions of Tm(3+) even after carrying doxorubicin hydrochloride (DOX). The drug-release test reveals that the capsules showed an apparent sustained release character and released in a pH-sensitive manner. Interestingly, the UC luminescence intensity of the drug-carrying system increases with the released DOX, realizing the possibility to track or monitor the released drug by the change of UC fluorescence simultaneously, which should be highly promising in anticancer drug delivery and targeted cancer therapy.

  2. Valence photoelectron spectroscopy of Gd silicides

    SciTech Connect

    Braicovich, L. ); Puppin, E.; Lindau, I. ); Iandelli, A.; Olcese, G.L.; Palenzona, A. )

    1990-02-15

    Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

  3. Lasing characteristics of Yb-doped gadolinium yttrium mixed oxyorthosilicate Yb:(Gd0.1Y0.9)2SiO5

    NASA Astrophysics Data System (ADS)

    Chu, Hongwei; Zhao, Shengzhi; Yang, Kejian; Zhao, Jia; Li, Dechun; Li, Guiqiu; Li, Tao; Qiao, Wenchao; Xu, Xiaodong; Zheng, Lihe; Xu, Jun

    2015-07-01

    A continuous wave (CW) tunable laser based on an alloyed oxyorthosilicate Yb:(Gd0.1Y0.9)2SiO5 was demonstrated for the first time. With an output coupler (OC) of T = 10%, a maximum output power of 958 mW was obtained with a slope efficiency of 18.2%. Simultaneous multi-wavelength operation was also observed with an OC of T = 4%. The M2 factor of the CW laser beam was measured to be 1.06. The thermo-optic coefficient was estimated to be 7.1 × 10-6/K. By using a 400 μm-thick GaAs wafer as saturable absorber, a stably Q-switched laser at 1080.4 nm was also firstly realized. A minimum pulse duration of 60.2 ns was obtained with a repetition rate of 47.6 kHz under an absorbed pump power of 11.25 W. The corresponding highest pulse energy and peak power were 5.3 μJ and 88 W, respectively. By using a V-type cavity and an OC of T = 4%, the laser can be tuned in the range from 1021 to 1094 nm.

  4. Influence of core size on the upconversion luminescence properties of spherical Gd{sub 2}O{sub 3}:Yb{sup 3+}/Er{sup 3+}@SiO{sub 2} particles with core-shell structures

    SciTech Connect

    Zheng, Kezhi; Liu, Zhenyu; Liu, Ye; Song, Weiye; Qin, Weiping

    2013-11-14

    Spherical SiO{sub 2} particles with different sizes (30, 80, 120, and 180 nm) have been coated with Gd{sub 2}O{sub 3}:Yb{sup 3+}/Er{sup 3+} layers by a heterogeneous precipitation method, leading to the formation of core-shell structural Gd{sub 2}O{sub 3}:Yb{sup 3+}/Er{sup 3+}@SiO{sub 2} particles. The samples were characterized by using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, upconversion (UC) emission spectra, and fluorescent dynamical analysis. The obtained core-shell particles have perfect spherical shape with narrow size distribution. Under the excitation of 980 nm diode laser, the core-shell samples showed size-dependent upconversion luminescence (UCL) properties. The inner SiO{sub 2} cores in core-shell samples were proved to have limited effect on the total UCL intensities of Er{sup 3+} ions. The UCL intensities of core-shell particles were demonstrated much higher than the values obtained in pure Gd{sub 2}O{sub 3}:Yb{sup 3+}/Er{sup 3+} with the same phosphor volume. The dependence of the specific area of a UCL shell on the size of its inner SiO{sub 2} particle was calculated and analyzed for the first time. It was confirmed that the surface effect came from the outer surfaces of emitting shells is dominant in influencing the UCL property in the core-shell samples. Three-photon UC processes for the green emissions were observed in the samples with small sizes of SiO{sub 2} cores. The results of dynamical analysis illustrated that more nonradiative relaxation occurred in the core-shell samples with smaller SiO{sub 2} core sizes.

  5. Study of Rayleigh–Taylor growth in laser irradiated planar SiO{sub 2} targets at ignition-relevant conditions

    SciTech Connect

    Hager, J. D.; Collins, T. J. B.; Knauer, J. P.; Meyerhofer, D. D.; Sangster, T. C.; Smalyuk, V. A.

    2013-07-15

    Rayleigh–Taylor (RT) growth experiments were performed on the OMEGA laser [T. R. Boehly et al., Opt. Commun. 133, 495 (1997)] using planar SiO{sub 2} targets seeded with a single mode 60-μm wavelength perturbation driven at peak laser intensities up to 9 × 10{sup 14} W/cm{sup 2}. These are the first RT measurements in SiO{sub 2} at conditions relevant to direct-drive inertial confinement fusion ignition. The measured average modulation growth rates agree with the 2-D hydrodynamics code DRACO, providing an important step in the development of target ablators that are robust to RT growth and hot- electron preheat considerations when driven at the intensities required to achieve thermonuclear ignition.

  6. The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate

    SciTech Connect

    Sankin, V. I. Shkrebii, P. P.; Lebedev, A. A.

    2006-10-15

    Dependence of the short-circuit photocurrent on the voltage V{sub g} applied to the gate of the 6H-SiC planar field-effect transistor is studied. The negative differential photoconductivity appeared at a certain value of V{sub g}; the parameters of this photoconductivity corresponded to those of the Wannier-Stark ladders in the natural 6H-SiC super lattice. At the same value of V{sub g}, a fairly abrupt decrease to zero of the source-drain current I{sub sd} is observed, which is indicative of cutoff at the voltage that is much lower than the expected cutoff voltage for this structure. The effect is attributed to a decrease in mobility in the mode of the Wannier-Stark ladders, a decrease in the rate of ionization of the donor atoms, and a reduction in the screening of the field.

  7. Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

    NASA Technical Reports Server (NTRS)

    Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

    1994-01-01

    Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

  8. Comparison of luminescence, energy resolution and light loss coefficient of Gd1.53La0.47Si2O7:Ce and Lu1.9Y0.1SiO5:Ce scintillators

    NASA Astrophysics Data System (ADS)

    Yawai, Nattasuda; Wantong, Kriangkrai; Chewpraditkul, Weerapong; Murakami, Rikito; Horiai, Takahiko; Kurosawa, Shunsuke; Yoshikawa, Akira; Nikl, Martin

    2017-02-01

    The luminescence and scintillation properties of Gd1.53La0.47Si2O7:Ce (GPSLa23.5%:Ce) scintillators were investigated and compared to those of Lu1.9Y0.1SiO5:Ce (LYSO:Ce) scintillators. At 662 keV γ-rays, the light yield of 33,500±3300 ph/MeV obtained for GPSLa23.5%:Ce is higher than that of 28,100±2800 ph/MeV obtained for LYSO:Ce. The energy resolution of 4.8±0.2% obtained for GPSLa23.5%:Ce is much better than that of 8.2±0.3% obtained for LYSO:Ce due to its better intrinsic resolution and proportionality of light yield. The light yield and energy resolution for α- rays, as well as a light yield ratio under excitation with α - and γ - rays (α/γ ratio) were also determined. The intrinsic light yield and light loss coefficient under excitation with 662 keV γ-rays were evaluated. The total attenuation coefficient at 60 keV and 662 keV γ - rays was also determined and compared with the theoretical one calculated using the WinXCom program.

  9. Synthesis, structure, and magnetic behavior of a new gadolinium thiosilicate: Gd 4[SiS 4] 3

    NASA Astrophysics Data System (ADS)

    Hatscher, Stephan T.; Urland, Werner

    2003-05-01

    Single crystals of the title compound were prepared from the elements by a solid state reaction in an iodine atmosphere. Data collection were carried out using a STOE image plate detector at 293 K. The compound crystallizes in the space group P2 1/n of the monoclinic system isotypically to Tb 4[SiS 4] 3 with four formular units in cells of dimensions: a=986.7(2) pm, b=1099.69(19) pm, c=1646.2(4) pm, β=102.67(3)°. The corresponding residual (all data) for the refined structure is 3.09%. The magnetic behavior of the compound was investigated on powdered samples in a temperature range between 1.7 and 300 K. The deviations from the Curie-behavior could be interpreted by the molecular field approach.

  10. Spectroscopy of Gd153 and Gd157 using the (p,dγ) reaction

    DOE PAGES

    Ross, T. J.; Hughes, R. O.; Allmond, J. M.; ...

    2014-10-31

    Low-spin single quasineutron levels in 153Gd and 157Gd have been studied following the 154Gd(p,d-γ )153Gd and 158Gd(p,d-γ )157Gd reactions. A combined Si telescope and high-purity germanium array was utilized, allowing d-γ and d-γ-γ coincidence measurements. Almost all of the established low-excitation-energy, low-spin structures were confirmed in both 153Gd and 157Gd. Several new levels and numerous new rays are observed in both nuclei, particularly for Ex ≥1 MeV. Lastly, residual effects of a neutron subshell closure at N = 64 are observed in the form of a large excitation energy gap in the single quasineutron level schemes.

  11. Spectroscopy of 153Gd and 157Gd using the (p ,d γ ) reaction

    NASA Astrophysics Data System (ADS)

    Ross, T. J.; Hughes, R. O.; Allmond, J. M.; Beausang, C. W.; Angell, C. T.; Basunia, M. S.; Bleuel, D. L.; Burke, J. T.; Casperson, R. J.; Escher, J. E.; Fallon, P.; Hatarik, R.; Munson, J.; Paschalis, S.; Petri, M.; Phair, L. W.; Ressler, J. J.; Scielzo, N. D.

    2014-10-01

    Low-spin single quasineutron levels in 153Gd and 157Gd have been studied following the 154Gd(p ,d -γ )153Gd and 158Gd(p ,d -γ )157Gd reactions. A combined Si telescope and high-purity germanium array was utilized, allowing d -γ and d -γ -γ coincidence measurements. Almost all of the established low-excitation-energy, low-spin structures were confirmed in both 153Gd and 157Gd. Several new levels and numerous new γ rays are observed in both nuclei, particularly for Ex≥1 MeV. Residual effects of a neutron subshell closure at N =64 are observed in the form of a large excitation energy gap in the single quasineutron level schemes.

  12. Broadband NIR emission in novel sol-gel Er3+-doped SiO2-Nb2O5 glass ceramic planar waveguides for photonic applications

    NASA Astrophysics Data System (ADS)

    Aquino, Felipe Thomaz; Ferrari, Jefferson Luis; Ribeiro, Sidney José Lima; Ferrier, Alban; Goldner, Philippe; Gonçalves, Rogéria Rocha

    2013-01-01

    This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices.

  13. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method

    SciTech Connect

    GLowacki, MichaL; Runka, Tomasz; Drozdowski, MirosLaw; Domukhovski, Viktor; Berkowski, Marek

    2012-02-15

    The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15Gd{sub 1-x}){sub 2}SiO{sub 5} solid solutions have been grown by Czochralski method and characterized by various techniques. Crystal structure changes from C2/c to P2{sub 1}/c for composition with 0.15Gd{sub 1-x}){sub 2}SiO{sub 5} crystals are an alternative to LSO and GSO hosts for applications. Black-Right-Pointing-Pointer The break of the P2{sub 1}/c to C2/c structure in (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5}:Sm occurs for 0.15

  14. Optical and scintillation properties of Ce:(Gd8AE2)(SiO4)6O2 (AE = Mg, Ca, Sr and Ba) crystals

    NASA Astrophysics Data System (ADS)

    Igashira, Takuya; Mori, Masaki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

    2017-02-01

    1% Ce-doped and non-doped (Gd8AE2)(SiO4)6O2 (AE = Mg, Ca, Sr and Ba) (denoted as GMS, GCS, GSrS and GBS, respectively) single crystals were grown by the Floating Zone (FZ) method to evaluate their optical and scintillation properties. The Ce:GCS and Ce:GSrS samples exhibited scintillation and photoluminescence (PL) around 400 nm due to the 5d-4f transitions of Ce3+. On the other hand, Ce:GMS and Ce:GBS showed much weaker emissions in the wavelength range of 500-650 nm, in which the origin was associated with the host matrices. The PL decay curves were approximated by a double exponential decay function for all the Ce-doped samples. The decay times ranged around 10-30 and 40-90 ns, and faster components coincided with those of the non-doped samples. The scintillation decay curves of Ce-doped samples, on the other hand, were approximated by single exponential functions with slower decay constants than those of PL decay. These constants were very similar to those of non-doped samples. In the X-ray induced afterglow measurements, Ce:GCS exhibited the lowest afterglow level. The pulse height spectrum of these samples showed a full-energy peak under 241Am 5.5 MeV α-ray irradiation. Among these samples, Ce:GSrS exhibited the highest light yield which was around 600 ph/5.5 MeV-α.

  15. Novel Dy{sup 3+}-doped Ca{sub 2}Gd{sub 8}(SiO{sub 4}){sub 6}O{sub 2} white light phosphors for Hg-free lamps application

    SciTech Connect

    Wang, Yuhua; Wen, Yan; Zhang, Feng

    2010-11-15

    The luminescent properties of Ca{sub 2}Gd{sub 8(1-x)}(SiO{sub 4}){sub 6}O{sub 2}:xDy{sup 3+} (1% {<=} x {<=} 5%) powder crystals with oxyapatite structure were investigated under vacuum ultraviolet excitation. In the excitation spectrum, the peaks at 166 nm and 191 nm of the vacuum ultraviolet region can be assigned to the O{sup 2-} {yields} Gd{sup 3+}, and O{sup 2-} {yields} Dy{sup 3+} charge transfer band respectively, which is consistent with the theoretical calculated value using J{phi}rgensen's empirical formula. While the peaks at 183 nm and 289 nm are attributed to the f-d spin-allowed transitions and the f-d spin-forbidden transitions of Dy{sup 3+} in the host lattice with Dorenbos's expression. According to the emission spectra, all the samples exhibited excellent white emission under 172 nm excitation and the best calculated chromaticity coordinate was 0.335, 0.338, which indicates that the Ca{sub 2}Gd{sub 8}(SiO{sub 4}){sub 6}O{sub 2}:Dy{sup 3+} phosphor could be considered as a potential candidate for Hg-free lamps application.

  16. Electron probe microanalysis in the ternary Gd B C system

    NASA Astrophysics Data System (ADS)

    Ruiz, Domingo; Garland, Maria Teresa; Saillard, Jean-Yves; Halet, Jean-François; Bohn, Marcel; Bauer, Josef

    2002-09-01

    EPMA exploration of the Gd-B-C system in the region "Gd-GdB 2-GdBC" and in the neighborhood of the recently described Gd 4B 3C 4 compound led to the identification of 9 new ternary phases, which allows to clear up the phase diagram of this ternary system. A structural description of the bonding between the non-metal atoms in most of the identified compounds is proposed, on the basis of simple electron counting rules and using the planar repeat units or the finite linear anions which have been shown to exist in the structurally characterized rare-earth borocarbide compounds.

  17. Crystal structures and luminescence properties of novel compounds K{sub 4}M{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}] (M = Ce, Gd)

    SciTech Connect

    Aksenov, S. M.; Rassulov, V. A.; Rastsvetaeva, R. K.; Taroev, V. K.

    2013-11-15

    Two novel potassium rare earth silicates, obtained by hydrothermal synthesis, have been investigated by X-ray diffraction and described by the general formula K{sub 4}M{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}] (M = Ce, Gd). The parameters of the monoclinic K{sub 4}Ce{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}] and K{sub 4}Gd{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}] cells are, respectively, as follows: a = 26.867(1), 26.6520(2) A; b = 7.4150(2), 7.2854(1) A; c = 14.910(1), 14.8182(1) A; {beta} = 123.52(1) Degree-Sign , 123.46(1) Degree-Sign ; and sp. gr. P2{sub 1}/n. The structures are solved by the charge flipping method and refined in the anisotropic approximation of thermal vibrations for atoms to R = 5.2 and 2.5%, respectively. The compounds under study are crystallized into a new structural type, which is based on two-level [Al{sub 2}Si{sub 8}O{sub 24}] layers, combined into a three-dimensional framework by columns of edge-sharing seven-vertex REE polyhedra. Potassium atoms are located in the framework channels. The spectral luminescence characteristics are determined. The luminescence bands are typical of Gd{sup 3+} and Ce{sup 3+} ions. Upon excitation by light with {lambda}{sub exc} = 246 nm, a band due to the {sup 2}D {yields} {sup 8}F{sub 5/2} transition with {lambda}{sub max} = 430 nm is observed in the spectrum of K{sub 4}Ce{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}] and a band related to the {sup 6}P{sub 7/2} {yields} {sup 8}S{sub 7/2} transition with {lambda}{sub max} = 311 nm is observed in the spectrum of K{sub 4}Gd{sub 2}[Al{sub 2}Si{sub 8}O{sub 24}].

  18. Spectral characteristics of nanoamorphous phosphors obtained by evaporation of Sr{sub 2}Gd{sub 8}(SiO{sub 4}){sub 6}O{sub 2}: Eu polycrystals

    SciTech Connect

    Zuev, M.G.; Sokovnin, S.Yu.; Il’ves, V.G.; Baklanova, I.V.; Vasin, A.A.

    2014-10-15

    Amorphous nanophosphors have been obtained for the first time by pulsed electron beam evaporation of targets from bulk polycrystalline phosphors of the composition Sr{sub 2}Gd{sub 8}(SiO{sub 4}){sub 6}O{sub 2}: Eu with oxyapatite structure. The processes of crystallization of amorphous nanopowder were studied using differential scanning calorimetry and termogravimetry (40−1400 °C). It was found that the Raman spectra of the samples are modified when the particles decrease from bulk to nanodimensional state. The spectral and luminescent characteristics of the phosphors in polycrystalline and nanoamorphous states have been examined. It was established that Eu{sup 3+} forms two types of optical centers. Unlike bulk phosphors, in the nanophosphors no Eu{sup 2+} ions are formed. The ratio of red to orange luminescence intensity for nanophosphors was found to increase as compared with bulk phosphors. This effect is due to disordering of nanoparticles. A resonant transfer of excitation energy from Gd{sup 3+} to Eu{sup 3+} ions was found in bulk and nanophosphors. Upon transition from polycrystalline to nanoamorphous state and laser excitation of phosphors, the luminescence intensity of Eu{sup 3+} ions increases approximately 10 times. This effect is explained in the framework of the configuration coordinates model. - Graphical abstract: Schematic configurational-coordinate diagram for Eu{sup 3+} ion in polycrystalline Sr{sub 2}Gd{sub 6.4}Eu{sub 1.6}Si{sub 6}O{sub 26−δ} and nanoamorphous phosphor. - Highlights: • Nanoamorphous phosphor is obtained by electron-beam evaporation of bulk silicate. • In nanoamorphous samples Raman spectra are modified intensity. • Nanofosfor luminescence by 10 times more intensively, than bulk phosphorus. • There is a transfer of energy of excitation from Gd{sup 3+} to Eu{sup 3+} in bulk- and nanophosphor.

  19. Crystal and electronic structures of CaAl 2Si 2-type rare-earth copper zinc phosphides RECuZnP 2 ( RE=Pr, Nd, Gd-Tm, Lu)

    NASA Astrophysics Data System (ADS)

    Blanchard, Peter E. R.; Stoyko, Stanislav S.; Cavell, Ronald G.; Mar, Arthur

    2011-01-01

    The quaternary rare-earth phosphides RECuZnP 2 ( RE=Pr, Nd, Gd-Tm, Lu) have been prepared by reaction of the elements at 900 °C, completing this versatile series which forms for nearly all RE metals. They adopt the trigonal CaAl 2Si 2-type structure (Pearson symbol hP5, space group P3¯ m1, Z=1), as confirmed by single-crystal X-ray diffraction analysis on ErCuZnP 2 and powder X-ray diffraction analysis on the remaining members. The Cu and Zn atoms are assumed to be disordered over the single transition-metal site. Band structure calculations on a hypothetically ordered YCuZnP 2 model suggest a semimetal, with a zero band gap between the valence and conduction bands. This electronic structure is supported by XPS valence band spectra for RECuZnP 2 ( RE=Gd-Er), in which the intensity drops off smoothly at the Fermi edge. The absence of a band gap permits the electron count to deviate from the precise value of 16 e - per formula unit, as demonstrated by the formation of a solid solution in GdCu xZn 2- xP 2 (1.0≤ x≤1.3), while still retaining the CaAl 2Si 2-type structure. Because the Cu 2 p XPS spectra indicate that the Cu atoms are always monovalent, the substitution of Cu for Zn leads to a decrease in electron count and a lowering of the Fermi level in the valence band. The magnetic susceptibility of RECuZnP 2 ( RE=Gd-Er), which obeys the Curie-Weiss law, confirms the presence of trivalent RE atoms.

  20. Fabrication and characterization of Er+3 doped SiO2/SnO2 glass-ceramic thin films for planar waveguide applications

    NASA Astrophysics Data System (ADS)

    Guddala, S.; Chiappini, A.; Armellini, C.; Turell, S.; Righini, G. C.; Ferrari, M.; Narayana Rao, D.

    2015-02-01

    Glass-ceramics are a kind of two-phase materials constituted by nanocrystals embedded in a glass matrix and the respective volume fractions of crystalline and amorphous phase determine the properties of the glass-ceramics. Among these properties transparency is crucial in particular when confined structures, such as, dielectric optical waveguides, are considered. Moreover, the segregation of dopant rare-earth ions, like erbium, in low phonon energy crystalline medium makes these structures more promising in the development of waveguide amplifiers. Here we are proposing a new class of low phonon energy tin oxide semiconductor medium doped silicate based planar waveguides. Er3+ doped (100-x) SiO2-xSnO2 (x= 10, 20, 25 and 30mol%), glass-ceramic planar waveguide thin films were fabricated by a simple sol-gel processing and dip coating technique. XRD and HRTEM studies indicates the glass-ceramic phase of the film and the dispersion of ~4nm diameter of tin oxide nanocrystals in the amorphous phase of silica. The spectroscopic assessment indicates the distribution of the dopant erbium ions in the crystalline medium of tin oxide. The observed low losses, 0.5±0.2 dB/cm, at 1.54 μm communication wavelength makes them a quite promising material for the development of high gain integrated optical amplifiers.

  1. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    SciTech Connect

    Purches, W. E.; Rossi, A.; Zhao, R.; Kafanov, S.; Duty, T. L.; Dzurak, A. S.; Rogge, S.; Tettamanzi, G. C.

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  2. Crystal and electronic structures of CaAl{sub 2}Si{sub 2}-type rare-earth copper zinc phosphides RECuZnP{sub 2} (RE=Pr, Nd, Gd-Tm, Lu)

    SciTech Connect

    Blanchard, Peter E.R.; Stoyko, Stanislav S.; Cavell, Ronald G.; Mar, Arthur

    2011-01-15

    The quaternary rare-earth phosphides RECuZnP{sub 2} (RE=Pr, Nd, Gd-Tm, Lu) have been prepared by reaction of the elements at 900 {sup o}C, completing this versatile series which forms for nearly all RE metals. They adopt the trigonal CaAl{sub 2}Si{sub 2}-type structure (Pearson symbol hP5, space group P3-bar m1, Z=1), as confirmed by single-crystal X-ray diffraction analysis on ErCuZnP{sub 2} and powder X-ray diffraction analysis on the remaining members. The Cu and Zn atoms are assumed to be disordered over the single transition-metal site. Band structure calculations on a hypothetically ordered YCuZnP{sub 2} model suggest a semimetal, with a zero band gap between the valence and conduction bands. This electronic structure is supported by XPS valence band spectra for RECuZnP{sub 2} (RE=Gd-Er), in which the intensity drops off smoothly at the Fermi edge. The absence of a band gap permits the electron count to deviate from the precise value of 16 e{sup -} per formula unit, as demonstrated by the formation of a solid solution in GdCu{sub x}Zn{sub 2-x}P{sub 2} (1.0{<=}x{<=}1.3), while still retaining the CaAl{sub 2}Si{sub 2}-type structure. Because the Cu 2p XPS spectra indicate that the Cu atoms are always monovalent, the substitution of Cu for Zn leads to a decrease in electron count and a lowering of the Fermi level in the valence band. The magnetic susceptibility of RECuZnP{sub 2} (RE=Gd-Er), which obeys the Curie-Weiss law, confirms the presence of trivalent RE atoms. -- Graphical abstract: The absence of a band gap in the semimetallic quaternary rare-earth phosphides RECuZnP{sub 2} permits the formation of a solid solution such as GdCu{sub x}Zn{sub 2-x}P{sub 2} through hole-doping of the valence band. Display Omitted

  3. The isothermal section of Gd–Ni–Si system at 1070 K

    SciTech Connect

    Morozkin, A.V.; Knotko, A.V.; Yapaskurt, V.O.; Manfrinetti, P.; Pani, M.; Provino, A.; Nirmala, R.; Quezado, S.; Malik, S.K.

    2016-03-15

    The Gd–Ni–Si system has been investigated at 1070 K by X-ray and microprobe analyses. The existence of the known compounds, i.e.: GdNi{sub 10}Si{sub 2}, GdNi{sub 8}Si{sub 3}, GdNi{sub 5}Si{sub 3}, GdNi{sub 7}Si{sub 6}, GdNi{sub 6}Si{sub 6}, GdNi{sub 4}Si, GdNi{sub 2}Si{sub 2}, GdNiSi{sub 3}, Gd{sub 3}Ni{sub 6}Si{sub 2}, GdNiSi, GdNiSi{sub 2}, GdNi{sub 0.4}Si{sub 1.6}, Gd{sub 2}Ni{sub 2.35}Si{sub 0.65}, Gd{sub 3}NiSi{sub 2}, Gd{sub 3}NiSi{sub 3} and Gd{sub 6}Ni{sub 1.67}Si{sub 3}, has been confirmed. Moreover, five new phases have been identified in this system. The crystal structure for four of them has been determined: Gd{sub 2}Ni{sub 16−12.8}Si{sub 1−4.2} (Th{sub 2}Zn{sub 17}-type), GdNi{sub 6.6}Si{sub 6} (GdNi{sub 7}Si{sub 6}-type), Gd{sub 3}Ni{sub 8}Si (Y{sub 3}Co{sub 8}Si-type) and Gd{sub 3}Ni{sub 11.5}Si{sub 4.2}(Gd{sub 3}Ru{sub 4}Ga{sub 12}-type). The compound with composition ~Gd{sub 2}Ni{sub 4}Si{sub 3} still remains with unknown structure. Quasi-binary phases, solid solutions, were detected at 1070 K to be formed by the binaries GdNi{sub 5}, GdNi{sub 3}, GdNi{sub 2}, GdNi, GdSi{sub 2} and GdSi{sub 1.67}; while no appreciable solubility was observed for the other binary compounds of the Gd–Ni–Si system. Magnetic properties of the GdNi{sub 6}Si{sub 6}, GdNi{sub 6.6}Si{sub 6} and Gd{sub 3}Ni{sub 11.5}Si{sub 4.2} compounds have also been investigated and are here reported. - Graphical abstract: The Gd–Ni–Si system has been investigated at 1070 K by X-ray and microprobe analyses. The known GdNi{sub 10}Si{sub 2}, GdNi{sub 8}Si{sub 3}, GdNi{sub 5}Si{sub 3}, GdNi{sub 7}Si{sub 6}, GdNi{sub 6}Si{sub 6}, GdNi{sub 4}Si, GdNi{sub 2}Si{sub 2}, GdNiSi{sub 3}, Gd{sub 3}Ni{sub 6}Si{sub 2}, GdNiSi, GdNiSi{sub 2}, GdNi{sub 0.4}Si{sub 1.6}, Gd{sub 2}Ni{sub 2.35}Si{sub 0.65}, Gd{sub 3}NiSi{sub 2}, Gd{sub 3}NiSi{sub 3} and Gd{sub 6}Ni{sub 1.67}Si{sub 3} compounds have been confirmed and five new ~Gd{sub 2}Ni{sub 4}Si{sub 3} (unknown type), Gd{sub 2}Ni{sub 16

  4. Syntheses optimization, structural and thermoelectric properties of 1/1 Tsai-type quasicrystal approximants in RE-Au-SM systems (RE=Yb, Gd and SM=Si, Ge).

    PubMed

    Gebresenbut, Girma Hailu; Tamura, Ryuji; Eklöf, Daniel; Gómez, Cesar Pay

    2013-04-03

    Yb-Cd (Tsai-type) quasicrystals constitute the largest icosahedral quasicrystal family where Yb can be replaced by other rare earth elements (RE) and Cd by pairs of p- and d-block elements. YbCd6 is a prototype 1/1 Tsai-type approximant phase which has a similar local structure to the Yb-Cd quasicrystal. In this study, the syntheses of Yb15.78Au65.22Ge19.00, Gd14.34Au67.16Ge18.5 and Gd14.19Au69.87Si15.94 Tsai-type 1/1 quasicrystal approximants are optimized using the self-flux technique. The crystal structures of the compounds are refined by collecting single crystal x-ray diffraction data. The structural refinements indicated that the compounds are essentially isostructural with some differences at their cluster centers. The basic polyhedral cluster unit in all the three compounds can be described by concentric shells of icosahedra symmetry and of disordered tetrahedra and/or a rare earth atom at the cluster center. Furthermore, the thermoelectric properties of the compounds are probed and their dimensionless figures of merit are calculated at different temperatures. A significant difference is observed in their thermoelectric properties, which could arise due to the slight difference in their crystal structure and chemical composition, as we move from Ge to Si and/or Gd to Yb. Therefore, this study shows the systematic effect of the chemical substitution of structurally similar materials on their thermoelectric properties.

  5. Syntheses optimization, structural and thermoelectric properties of 1/1 Tsai-type quasicrystal approximants in RE-Au-SM systems (RE=Yb, Gd and SM=Si, Ge)

    NASA Astrophysics Data System (ADS)

    Hailu Gebresenbut, Girma; Tamura, Ryuji; Eklöf, Daniel; Pay Gómez, Cesar

    2013-04-01

    Yb-Cd (Tsai-type) quasicrystals constitute the largest icosahedral quasicrystal family where Yb can be replaced by other rare earth elements (RE) and Cd by pairs of p- and d-block elements. YbCd6 is a prototype 1/1 Tsai-type approximant phase which has a similar local structure to the Yb-Cd quasicrystal. In this study, the syntheses of Yb15.78Au65.22Ge19.00, Gd14.34Au67.16Ge18.5 and Gd14.19Au69.87Si15.94 Tsai-type 1/1 quasicrystal approximants are optimized using the self-flux technique. The crystal structures of the compounds are refined by collecting single crystal x-ray diffraction data. The structural refinements indicated that the compounds are essentially isostructural with some differences at their cluster centers. The basic polyhedral cluster unit in all the three compounds can be described by concentric shells of icosahedra symmetry and of disordered tetrahedra and/or a rare earth atom at the cluster center. Furthermore, the thermoelectric properties of the compounds are probed and their dimensionless figures of merit are calculated at different temperatures. A significant difference is observed in their thermoelectric properties, which could arise due to the slight difference in their crystal structure and chemical composition, as we move from Ge to Si and/or Gd to Yb. Therefore, this study shows the systematic effect of the chemical substitution of structurally similar materials on their thermoelectric properties.

  6. Exploration of R2XM2 (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge): Structural Motifs, the novel Compound Gd2AlGe2 and Analysis of the U3Si2 and Zr3Al2 Structure Types

    SciTech Connect

    McWhorter, Sean William

    2006-01-01

    In the process of exploring and understanding the influence of crystal structure on the system of compounds with the composition Gd5(SixGe1-x)4 several new compounds were synthesized with different crystal structures, but similar structural features. In Gd5(SixGe1-x)4, the main feature of interest is the magnetocaloric effect (MCE), which allows the material to be useful in magnetic refrigeration applications. The MCE is based on the magnetic interactions of the Gd atoms in the crystal structure, which varies with x (the amount of Si in the compound). The crystal structure of Gd5(SixGe1-x)4 can be thought of as being formed from two 32434 nets of Gd atoms, with additional Gd atoms in the cubic voids and Si/Ge atoms in the trigonal prismatic voids. Attempts were made to substitute nonmagnetic atoms for magnetic Gd using In, Mg and Al. Gd2MgGe2 and Gd2InGe2 both possess the same 32434 nets of Gd atoms as Gd5(SixGe1-x)4, but these nets are connected differently, forming the Mo2FeB2 crystal structure. A search of the literature revealed that compounds with the composition R2XM2 (R=Sc, Y, Ti, Zr, Hf, rare earth; X=main group element; M=transition metal, Si, Ge) crystallize in one of four crystal structures: the Mo2FeB2, Zr3Al2, Mn2AlB2 and W2CoB2 crystal structures. These crystal structures are described, and the relationships between them are highlighted. Gd2AlGe2 forms an entirely new crystal structure, and the details of its synthesis and characterization are given. Electronic structure calculations are performed to understand the nature of bonding in this compound and how

  7. Electrochemical planarization

    DOEpatents

    Bernhardt, A.F.; Contolini, R.J.

    1993-10-26

    In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer. 12 figures.

  8. Electrochemical planarization

    DOEpatents

    Bernhardt, Anthony F.; Contolini, Robert J.

    1993-01-01

    In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and allows batch processing of multiple wafers. The etched back planarized thin film interconnect is flush with the dielectric layer.

  9. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  10. Synthesis and characterization of monodisperse spherical SiO{sub 2}-RE{sub 2}O{sub 3} (RE=rare earth elements) and SiO{sub 2}-Gd{sub 2}O{sub 3}:Ln{sup 3+} (Ln=Eu, Tb, Dy, Sm, Er, Ho) particles with core-shell structure

    SciTech Connect

    Wang, H.; Yang, J.; Zhang, C.M.; Lin, J.

    2009-10-15

    Spherical SiO{sub 2} particles have been coated with rare earth oxide layers by a Pechini sol-gel process, leading to the formation of core-shell structured SiO{sub 2}-RE{sub 2}O{sub 3} (RE=rare earth elements) and SiO{sub 2}-Gd{sub 2}O{sub 3}:Ln{sup 3+} (Ln=Eu, Tb, Dy, Sm, Er, Ho) particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence spectra as well as lifetimes were used to characterize the resulting SiO{sub 2}-RE{sub 2}O{sub 3} (RE=rare earth elements) and SiO{sub 2}-Gd{sub 2}O{sub 3}:Ln{sup 3+} (Eu{sup 3+}, Tb{sup 3+}, Dy{sup 3+}, Sm{sup 3+}, Er{sup 3+}, Ho{sup 3+}) samples. The obtained core-shell phosphors have perfect spherical shape with narrow size distribution (average size ca. 380 nm), smooth surface and non-agglomeration. The thickness of shells could be easily controlled by changing the number of deposition cycles (40 nm for two deposition cycles). Under the excitation of ultraviolet, the Ln{sup 3+} ion mainly shows its characteristic emissions in the core-shell particles from Gd{sub 2}O{sub 3}:Ln{sup 3+} (Eu{sup 3+}, Tb{sup 3+}, Sm{sup 3+}, Dy{sup 3+}, Er{sup 3+}, Ho{sup 3+}) shells. - Graphical abstract: The advantages of core-shell phosphors are the easy availability of homogeneous spherical morphology in different size, and its corresponding luminescence color can change from red, yellow to green.

  11. Compartmentalization of Gd liposomes: the quenching effect explained.

    PubMed

    Guenoun, Jamal; Doeswijk, Gabriela N; Krestin, Gabriel P; Bernsen, Monique R

    2016-01-01

    Cationic liposomes carrying high [Gd] can be used as efficient cell-labeling agents. In a compartmentalized state, Gd can cause signal loss (relaxivity quenching). The contributions of liposomal [Gd], size and compartmentalization state to relaxivity quenching were assessed. The dependency of signal intensity (SI) on intraliposomal [Gd] was assessed comparing three different [Gd] (0.3, 0.6 and 1.0 M Gd) in both small (80 nm) and large (120 nm) cationic liposomes. In addition, five compartmentalization states were compared: free Gd, intact Gd liposomes, ruptured Gd liposomes, Gd liposomes in intact cells and Gd liposomes in ruptured cells (simulating cell death). Gd also causes R2 effects, which is often overlooked. Therefore, both R1 and R2 relaxation rates of a dilution range were measured by T1 and T2 mapping on a 7 T clinical scanner. Less is more. As the unidirectional water efflux rate (outbound across the liposome membrane, κle) is proportional to the surface:volume ratio, smaller liposomes yielded a consistently higher R1 than larger liposomes. For equal voxel [Gd] less concentrated liposomes (0.3 M Gd) yielded higher R1/R2 ratio because of the higher extraliposomal water fraction (vl ). Gd exhibits a dualistic behavior: from hypointensity to hyperintensity to hypointensity, with decreasing [Gd]. Regarding compartmentalization, fewer membrane barriers means a higher R1 /R2 ratio. Gd liposomes exhibit a versatile contrast behavior, dependent on the compartmentalization state, liposomal size, intraliposomal [Gd] and liposome number. Both R1 and R2 effects contribute to this. The versatility allows one to tailor the optimal liposomal formulation to desired goals in cell labeling and tracking.

  12. Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} compounds: Crystal structure and magnetic properties

    SciTech Connect

    Morozkin, A.V.; Isnard, O.; Nirmala, R.; Malik, S.K.

    2015-05-15

    The crystal structure of new Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} (Immm, No. 71, oI10) and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} (Cmce No. 64, oC20) compounds has been established using powder X-ray diffraction studies. Magnetization measurements show that the Mo{sub 2}NiB{sub 2}-type Gd{sub 2}Ni{sub 2.35}Si{sub 0.65} undergoes a ferromagnetic transition at ~66 K, whereas isostructural Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} shows an antiferromagnetic transition at ~52 K and a field-induced metamagnetic transition at low temperatures. Neutron diffraction study shows that, in zero applied field, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} exhibits c-axis antiferromagnetic order with propagation vector K=[1/2, 0, 1/2] below its magnetic ordering temperature and Tb magnetic moment reaches a value of 8.32(5) μ{sub B} at 2 K. The La{sub 2}Ni{sub 3}-type Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} exhibits ferromagnetic like transition at ~42 K with coexisting antiferromagnetic interactions and field induced metamagnetic transition below ~17 K. The magnetocaloric effect of Gd{sub 2}Ni{sub 2.35}Si{sub 0.65}, Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} is calculated in terms of isothermal magnetic entropy change and it reaches a maximum value of −14.3 J/kg K, −5.3 J/kg K and −10.3 J/kg K for a field change of 50 kOe near 66 K, 52 K and 42 K, respectively. Low temperature magnetic ordering with enhanced anisotropic effects in Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.35}Si{sub 0.65} is accompanied by a positive magnetocaloric effect with isothermal magnetic entropy changes of +12.8 J/kg K and ~+9.9 J/kg K, respectively at 7 K for a field change of 50 kOe. - Graphical abstract: The (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} supplement the series of Mo{sub 2}NiB{sub 2}-type rare earth compounds, whereas the (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} supplement the series of La{sub 2}Ni{sub 3}-type rare

  13. Finite dipole model for extreme near-field thermal radiation between a tip and planar SiC substrate

    NASA Astrophysics Data System (ADS)

    Jarzembski, Amun; Park, Keunhan

    2017-04-01

    Recent experimental studies have measured the infrared (IR) spectrum of tip-scattered near-field thermal radiation for a SiC substrate and observed up to a 50cm-1 redshift of the surface phonon polariton (SPhP) resonance peak [1,2]. However, the observed spectral redshift cannot be explained by the conventional near-field thermal radiation model based on the point dipole approximation. In the present work, a heated tip is modeled as randomly fluctuating point charges (or fluctuating finite dipoles) aligned along the primary axis of a prolate spheroid, and quasistatic tip-substrate charge interactions are considered to formulate the effective polarizability and self-interaction Green's function. The finite dipole model (FDM), combined with fluctuational electrodynamics, allows the computation of tip-plane thermal radiation in the extreme near-field (i.e., H / R ≲ 1 , where H is the tip-substrate gap distance and R is the tip radius), which cannot be calculated with the point dipole approximation. The FDM provides the underlying physics on the spectral redshift of tip-scattered near-field thermal radiation as observed in experiments. In addition, the SPhP peak in the near-field thermal radiation spectrum may split into two peaks as the gap distance decreases into the extreme near-field regime. This observation suggests that scattering-type spectroscopic measurements may not convey the full spectral features of tip-plane extreme near-field thermal radiation.

  14. Up-conversion and excitation energy transfer between impurity ions in Pr{sup 3+} : Y{sub 2}SiO{sub 5}, Pr{sup 3+} : Lu{sub 2}SiO{sub 5}, and Pr{sup 3+} : Gd{sub 2}SiO{sub 5} crystals

    SciTech Connect

    Znamenskiy, Nikolay V; Manykin, Eduard A; Orlov, Yurii V; Petrenko, Evgenii A; Yukina, Tatiana G; Malyukin, Yurii V; Zhmurin, Petr N; Lebedenko, Aleksandr N; Masalov, Andrei A

    2004-07-31

    Anti-Stokes fluorescence from the {sup 3}P{sub 0} level of impurity ions was detected in Pr{sup 3+} : Y{sub 2}SiO{sub 5}, Pr{sup 3+} : Lu{sub 2}SiO{sub 5}, and Pr{sup 3+} : Gd{sub 2}SiO{sub 5} crystals non-resonantly pumped by laser radiation with a certain power density. The integrated intensity of the anti-Stokes fluorescence depends nonlinearly on the pump power density. As the atomic concentration of impurity ions was increased from 0.3% to 0.6% and 1.8%, the anti-Stokes fluorescence intensity was saturated due to the concentration quenching of the {sup 1}D{sub 2} term of the impurity Pr{sup 3+} ions. The anti-Stokes fluorescence and quenching of the {sup 1}D{sub 2} term occur due to the cross relaxation of the electronic energy of excited terms of the Pr{sup 3+} ions. (lasers, active media)

  15. Spectroscopic, structural and in vitro cytotoxicity evaluation of luminescent, lanthanide doped core@shell nanomaterials GdVO4:Eu(3+)5%@SiO2@NH2.

    PubMed

    Szczeszak, Agata; Ekner-Grzyb, Anna; Runowski, Marcin; Szutkowski, Kosma; Mrówczyńska, Lucyna; Kaźmierczak, Zuzanna; Grzyb, Tomasz; Dąbrowska, Krystyna; Giersig, Michael; Lis, Stefan

    2016-11-01

    The luminescent GdVO4:Eu(3+)5%@SiO2@NH2 core@shell nanomaterials were obtained via co-precipitation method, followed by hydrolysis and co-condensation of silane derivatives: tetraethyl orthosilicate and 3-aminopropyltriethoxysilane. Their effect on human erythrocytes sedimentation and on proliferation of human lung microvascular endothelial cells was examined and discussed. The luminescent nanoparticles were synthesized in the presence of polyacrylic acid or glycerin in order to minimalize the agglomeration and excessive growth of nanostructures. Surface coating with amine functionalized silica shell improved their biocompatibility, facilitated further organic conjugation and protected the internal core. Magnetic measurements revealed an enhanced T1-relaxivity for the synthesized GdVO4:Eu(3+)5% nanostructures. Structure, morphology and average grain size of the obtained nanomaterials were determined by X-ray diffraction, transmission electron microscopy and dynamic light scattering analysis. The qualitative elemental composition of the nanomaterials was established using energy-dispersive X-ray spectroscopy. The spectroscopic characteristic of red emitting core@shell nanophosphors was completed by measuring luminescence spectra and decays. The emission spectra revealed characteristic bands of Eu(3+) ions related to the transitions (5)D0-(7)F0,1,2,3,4 and (5)D1-(7)F1. The luminescence lifetimes consisted of two components, associated with the presence of Eu(3+) ions located at the surface of the crystallites and in the bulk. Copyright © 2016 Elsevier Inc. All rights reserved.

  16. The lanthanoid(III) chloride cyclo-tetrasilicates M{sub 6}Cl{sub 10}[Si{sub 4}O{sub 12}] (M=Sm, Gd-Dy): Synthesis, structure and IR investigations

    SciTech Connect

    Hartenbach, Ingo . E-mail: hartenbach@iac.uni-stuttgart.de; Jagiella, Stefan; Schleid, Thomas . E-mail: schleid@iac.uni-stuttgart.de

    2006-08-15

    The chloride derivatized lanthanoid(III) cyclo-tetrasilicates of the composition M{sub 6}Cl{sub 10}[Si{sub 4}O{sub 12}] (M=Sm, Gd-Dy) crystallize monoclinically in space group C2/m (a=1062-1065, b=1036-1052, c=1163-1187pm, {beta}{approx}103{sup o}, Z=2). They are obtained by the reaction of the sesquioxides M{sub 2}O{sub 3} (or the combination of Tb{sub 4}O{sub 7} and Tb in 3:2-molar ratio for the terbium case), the corresponding trichlorides MCl{sub 3}, and SiO{sub 2} (silica gel) in stoichiometric ratios with double the amount of MCl{sub 3} as flux in evacuated silica tubes (7d at 850deg. C) as transparent, pseudo-octagonal, pillar-shaped single crystals with the colour of the respective lanthanoid trication M{sup 3+}. Their crystal structure can be considered as a layered arrangement in which cationic {sub {approx}}{sup 2}{l_brace}[(M2){sub 5}Cl{sub 9}]{sup 6+}{r_brace} layers are alternatingly piled with anionic ones of the kind {sub {approx}}{sup 2}{l_brace}[(M1)Cl[Si{sub 4}O{sub 12}

  17. CaO-MgO-Al2O3-SiO2 (CMAS) corrosion of Gd2Zr2O7 and Sm2Zr2O7

    DOE PAGES

    Wang, Honglong; Bakal, Ahmet; Zhang, Xingxing; ...

    2016-08-08

    Ceramic thermal barrier coatings are applied to superalloys used in gas turbine engineering to increase the operating temperature and the energy conversion efficiency. However, dust consisting of CaO-MgO-Al2O3-SiO2 (CMAS) from the air can be injected into the engines and corrode the thermal barrier coatings. Lanthanide zirconates are promising materials in thermal barrier coatings due to their low thermal conductivities, good phase stability and good corrosion resistance. However, the corrosion resistance mechanism of CMAS on lanthanide zirconates is still not clearly understood. In this work, the corrosion mechanism of Gd2Zr2O7 and Sm2Zr2O7 in CMAS is studied. Here, the results show thatmore » the CMAS can easily react with lanthanide zirconate thermal barrier coatings to form a dense layer, which can resist further corrosion« less

  18. Diode-pumped high-peak-power femtosecond Yb+3:(Gd0.1Y0.9)2SiO5 laser at 1058.5 nm

    NASA Astrophysics Data System (ADS)

    Wang, Yandang; Yang, Kejian; Zhao, Shengzhi; Li, Tao; Qiao, Wenchao; Su, Xiancui; Zhang, Baitao; He, Jingliang; Zheng, Lihe; Su, Liangbi; Xu, Jun; Gao, Zijing

    2017-09-01

    A diode-pumped continuous-wave mode-locked (CWML) femtosecond Yb+3:(Gd0.1Y0.9)2SiO5 (Yb:GYSO) laser at 1058.5 nm with a semiconductor saturable absorber mirror (SESAM) was successfully realized and demonstrated. Pulses with a duration of 186 fs were obtained at a pulse repetition rate of 80.1 MHz with a maximum average output power of 564 mW, corresponding to a maximum single pulse energy of 7.04 nJ and peak power of 37.9 kW. To the best of our knowledge, this is the highest peak power ever obtained from a mode-locked femtosecond Yb:GYSO laser.

  19. LETTER TO THE EDITOR: Study of Yb3+-Yb3+ and Yb3+-Ce3+ energy transfer in Yb,Ce:CaGd4Si3O13 (Yb,Ce:CGS) crystals

    NASA Astrophysics Data System (ADS)

    Voroshilov, I. V.; Lebedev, V. A.; Gavrilenko, A. N.; Ignatiev, B. V.; Isaev, V. A.; Shestakov, A. V.

    2000-03-01

    The Yb radiative lifetime of 923 µs has been determined by the extrapolation to the zero concentration of Yb. Quenching of the Yb luminescence is observed in the Yb3+ ,Ce3+ :CaGd4 Si3 O13 (Yb,Ce:CGS) crystals due to their intrinsic defects and Ce3+ ions. The main quenching mechanism is the energy migration through Yb ions to the defects with a micro-parameter CDD (Yb-Yb) = 1.0 × 10-38 cm6 s-1 , and the Yb3+ icons/Journals/Common/to" ALT="to" ALIGN="TOP"/> Ce3+ energy transfer with a micro-parameter CDA = 5.5 × 10-44 cm6 s-1 .

  20. Analysis of the refractive index and film thickness of Eu doped gadolinium oxide (Gd2O3) planar waveguides fabricated by the sol-gel and dip coating methods

    NASA Astrophysics Data System (ADS)

    Johnson, Quianna S.; Edwards, Matthew; Curley, Michael

    2013-09-01

    The present research focused on the systematic study of the fabrication of gadolinium oxide (Gd2O3) and gadolinium oxide:europium (Gd2O3:Eu3+) thin films via the sol-gel and dip coating methods under normal laboratory conditions in a methanol solvent medium to determine if thin films of comparable quality could be produced. The thin films were synthesized via the sol-gel method by the hydrolysis of gadolinium acetylacetate in two different solvent mediums, absolute ethanol and methanol. The europium doped gadolinium oxide sol-­-gels were prepared to have a final concentration of 0.01 M europium nitrate. Ordinary microscope glass slides (borosilicate glass or BSG) were used as the substrate. The substrates were cleaned and coated using the dip coating apparatus to prepare thin films that consisted of 5, 10, 30 and 50 layers. The cast films were annealed at 300°C and 500°C by direct insertion in a furnace operated under atmospheric conditions. The resulting film thickness and effective refractive indices were determined and compared. Finally, we present the introductory results of gadolinium oxide thin films as a waveguide.

  1. Planar micromixer

    DOEpatents

    Fiechtner, Gregory J.; Singh, Anup K.; Wiedenman, Boyd J.

    2008-03-18

    The present embodiment describes a laminar-mixing embodiment that utilizes simple, three-dimensional injection. Also described is the use of the embodiment in combination with wide and shallow sections of channel to affect rapid mixing in microanalytical systems. The shallow channel sections are constructed using all planar micromachining techniques, including those based on isotropic etching. The planar construction enables design using minimum dispersion concepts that, in turn, enable simultaneous mixing and injection into subsequent chromatography channels.

  2. Electrochemical planarization for microelectronic circuits

    SciTech Connect

    Contolini, R.J.; Mayer, S.T.; Bernhardt, A.F.

    1993-03-25

    The need for flatter and smoother surfaces (planarization) in microelectronic circuits increases as the number of metal levels in ultra large scale integrated (ULSI) circuits increases. At Lawrence Livermore National Laboratory, the authors have developed an electrochemical planarization process that fills vias and trenches with metal (without voids) and subsequently planarizes the surface. Use is made of plasma-enhanced chemical vapor deposition (PECVD) of SiO{sub 2} for the dielectric layers and electroplated copper for the metalization. This report describes the advantages of this process over existing techniques, possibilities for collaboration, and previous technology transfer.

  3. Electrochemical planarization for microelectronic circuits

    SciTech Connect

    Contolini, R.J.; Mayer, S.T.; Bernhardt, A.F.

    1993-03-25

    The need for flatter and smoother surfaces (planarization) in microelectronic circuits increases as the number of metal levels in ultra large scale integrated (ULSI) circuits increases. At Lawrence Livermore National Laboratory, the authors have developed an electrochemical planarization process that fills vias and trenches with metal (without voids) and subsequently planarizes the surface. Use is made of plasma-enhanced chemical vapor deposition (PECVD) of SiO[sub 2] for the dielectric layers and electroplated copper for the metalization. This report describes the advantages of this process over existing techniques, possibilities for collaboration, and previous technology transfer.

  4. Crystal Chemistry of the New Families of Interstitial Compounds R6Mg23C (R = La, Ce, Pr, Nd, Sm, or Gd) and Ce6Mg23Z (Z = C, Si, Ge, Sn, Pb, P, As, or Sb).

    PubMed

    Wrubl, Federico; Manfrinetti, Pietro; Pani, Marcella; Solokha, Pavlo; Saccone, Adriana

    2016-01-04

    The crystal chemical features of the new series of compounds R6Mg23C with R = La-Sm or Gd and Ce6Mg23Z with Z = C, Si, Ge, Sn, Pb, P, As, or Sb have been studied by means of single-crystal and powder X-ray diffraction techniques. All phases crystallize with the cubic Zr6Zn23Si prototype (cF120, space group Fm3̅m, Z = 4), a filled variant of the Th6Mn23 structure. While no Th6Mn23-type binary rare earth-magnesium compound is known to exist, the addition of a third element Z (only 3 atom %), located into the octahedral cavity of the Th6Mn23 cell (Wyckoff site 4a), stabilizes this structural arrangement and makes possible the formation of the ternary R6Mg23Z compounds. The results of both structural and topological analyses as well as of LMTO electronic structure calculations show that the interstitial element plays a crucial role in the stability of these phases, forming a strongly bonded [R6Z] octahedral moiety spaced by zeolite cage-like [Mg45] clusters. Considering these two building units, the crystal structure of these apparently complex intermetallics can be simplified to the NaCl-type topology. Moreover, a structural relationship between RMg3 and R6Mg23C compounds has been unveiled; the latter can be described as substitutional derivatives of the former. The geometrical distortions and the consequent symmetry reduction that accompany this transformation are explicitly described by means of the Bärnighausen formalism within group theory.

  5. Synthesis, crystal structure and properties of Mg3B36Si9C and related rare earth compounds RE3-xB36Si9C (RE=Y, Gd-Lu)

    NASA Astrophysics Data System (ADS)

    Ludwig, Thilo; Pediaditakis, Alexis; Sagawe, Vanessa; Hillebrecht, Harald

    2013-08-01

    We report on the synthesis and characterisation of Mg3B36Si9C. Black single crystals of hexagonal shape were yielded from the elements at 1600 °C in h-BN crucibles welded in Ta ampoules. The crystal structure (space group R3barm, a=10.0793(13) Å, c=16.372(3) Å, 660 refl., 51 param., R1(F)=0.019; wR2(F2)=0.051) is characterized by a Kagome-net of B12 icosahedra, ethane like Si8-units and disordered SiC-dumbbells. Vibrational spectra show typical features of boron-rich borides and Zintl phases. Mg3B36Si9C is stable against HF/HNO3 and conc. NaOH. The micro-hardness is 17.0 GPa (Vickers) and 14.5 GPa (Knoop), respectively. According to simple electron counting rules Mg3B36Si9C is an electron precise compound. Band structure calculations reveal a band gap of 1.0 eV in agreement to the black colour. Interatomic distances obtained from the refinement of X-ray data are biased and falsified by the disorder of the SiC-dumbbell. The most evident structural parameters were obtained by relaxation calculation. Composition and carbon content were confirmed by WDX measurements. The small but significant carbon content is necessary by structural reasons and frequently caused by contaminations. The rare earth compounds RE3-xB36Si9C (RE=Y, Dy-Lu) are isotypic. Single crystals were grown from a silicon melt and their structures refined. The partial occupation of the RE-sites fits to the requirements of an electron-precise composition. According to the displacement parameters a relaxation should be applied to obtain correct structural parameters.

  6. Preparation Of Planar Optical SiO2-TiO2 And LiNbO3 Waveguides With A Dip Coating Method And An Embossing Technique For Fabricating Grating Couplers And Channel Waveguides

    NASA Astrophysics Data System (ADS)

    Tiefenthaler, K.; Briguet, V.; Buser, E.; Horisberger, M.; Lukosz, W.

    1983-11-01

    Planar monomode and multimode Si02-Ti02 waveguides were prepared with a dip coating method from Liquicoat solutions supplied by E. MERCK. By varying the Si02:Ti02 mixture ratio the value of the refractive index nF of the waveguiding films on Pyrex glass substrates can be chosen to lie between nF-1.6 and nF =1.36 First results on the preparation of LiNb03 waveguides are also presented. Thicknesses, refractive indices and losses of the waveguides were determined at the blue-green Ar laser wavelengths and at the He-Ne laser wavelengths λ=632.8 nm and λ=1.153 μm. With an embossing technique we fabricated surface relief gratings on Si02-Ti02 wave-guides. We used them successfully as input grating couplers. We propose to use this emboss-ing technique to fabricate channel waveguides and other integrated optical components in inorganic hard waveguiding materials such as Si02-Ti02.

  7. STM and DFT study of the Gd wetting layer reconstructions on the Si(0 0 1)-2 × 1 surface

    NASA Astrophysics Data System (ADS)

    Harrison, B. C.; Ryan, Peter; Boland, John J.

    2005-05-01

    This paper presents a structural study of the 2 × 8 and 2 × 7 wetting layer reconstructions that occur on the Si(1 0 0) surface following Gadolinium deposition at elevated temperatures. Scanning tunneling microscopy and density functional theory calculations were used to analyze the detailed structure of the wetting layer. The maxima observed in STM images are consistent with the location of metal atoms determined by geometry optimized DFT calculations. In the 2 × 8 reconstruction metal atoms occupy the dimer positions but with a modulation in height that serves to lower the stress along the dimer row direction. The 2 × 7 reconstruction is formed by the redistribution of metal atoms of the 2 × 8 reconstruction, where the metal can occupy either the dimer position or a bridging site between two silicon atoms.

  8. Ganglioside GD2 in reception and transduction of cell death signal in tumor cells

    PubMed Central

    2014-01-01

    Background Ganglioside GD2 is expressed on plasma membranes of various types of malignant cells. One of the most promising approaches for cancer immunotherapy is the treatment with monoclonal antibodies recognizing tumor-associated markers such as ganglioside GD2. It is considered that major mechanisms of anticancer activity of anti-GD2 antibodies are complement-dependent cytotoxicity and/or antibody-mediated cellular cytotoxicity. At the same time, several studies suggested that anti-GD2 antibodies are capable of direct induction of cell death of number of tumor cell lines, but it has not been investigated in details. In this study we investigated the functional role of ganglioside GD2 in the induction of cell death of multiple tumor cell lines by using GD2-specific monoclonal antibodies. Methods Expression of GD2 on different tumor cell lines was analyzed by flow cytometry using anti-GD2 antibodies. By using HPTLC followed by densitometric analysis we measured the amount of ganglioside GD2 in total ganglioside fractions isolated from tumor cell lines. An MTT assay was performed to assess viability of GD2-positive and -negative tumor cell lines treated with anti-GD2 mAbs. Cross-reactivity of anti-GD2 mAbs with other gangliosides or other surface molecules was investigated by ELISA and flow cytometry. Inhibition of GD2 expression was achieved by using of inhibitor for ganglioside synthesis PDMP and/or siRNA for GM2/GD2 and GD3 synthases. Results Anti-GD2 mAbs effectively induced non-classical cell death that combined features of both apoptosis and necrosis in GD2-positive tumor cells and did not affect GD2-negative tumors. Anti-GD2 mAbs directly induced cell death, which included alteration of mitochondrial membrane potential, induction of apoptotic volume decrease and cell membrane permeability. This cytotoxic effect was mediated exclusively by specific binding of anti-GD2 antibodies with ganglioside GD2 but not with other molecules. Moreover, the level of GD2

  9. Ganglioside GD2 in reception and transduction of cell death signal in tumor cells.

    PubMed

    Doronin, Igor I; Vishnyakova, Polina A; Kholodenko, Irina V; Ponomarev, Eugene D; Ryazantsev, Dmitry Y; Molotkovskaya, Irina M; Kholodenko, Roman V

    2014-04-28

    Ganglioside GD2 is expressed on plasma membranes of various types of malignant cells. One of the most promising approaches for cancer immunotherapy is the treatment with monoclonal antibodies recognizing tumor-associated markers such as ganglioside GD2. It is considered that major mechanisms of anticancer activity of anti-GD2 antibodies are complement-dependent cytotoxicity and/or antibody-mediated cellular cytotoxicity. At the same time, several studies suggested that anti-GD2 antibodies are capable of direct induction of cell death of number of tumor cell lines, but it has not been investigated in details. In this study we investigated the functional role of ganglioside GD2 in the induction of cell death of multiple tumor cell lines by using GD2-specific monoclonal antibodies. Expression of GD2 on different tumor cell lines was analyzed by flow cytometry using anti-GD2 antibodies. By using HPTLC followed by densitometric analysis we measured the amount of ganglioside GD2 in total ganglioside fractions isolated from tumor cell lines. An MTT assay was performed to assess viability of GD2-positive and -negative tumor cell lines treated with anti-GD2 mAbs. Cross-reactivity of anti-GD2 mAbs with other gangliosides or other surface molecules was investigated by ELISA and flow cytometry. Inhibition of GD2 expression was achieved by using of inhibitor for ganglioside synthesis PDMP and/or siRNA for GM2/GD2 and GD3 synthases. Anti-GD2 mAbs effectively induced non-classical cell death that combined features of both apoptosis and necrosis in GD2-positive tumor cells and did not affect GD2-negative tumors. Anti-GD2 mAbs directly induced cell death, which included alteration of mitochondrial membrane potential, induction of apoptotic volume decrease and cell membrane permeability. This cytotoxic effect was mediated exclusively by specific binding of anti-GD2 antibodies with ganglioside GD2 but not with other molecules. Moreover, the level of GD2 expression correlated with

  10. Modification of Mg{sub 2}Si in Mg–Si alloys with gadolinium

    SciTech Connect

    Ye, Lingying; Hu, Jilong Tang, Changping; Zhang, Xinming; Deng, Yunlai; Liu, Zhaoyang; Zhou, Zhile

    2013-05-15

    The modification effect of gadolinium (Gd) on Mg{sub 2}Si in the hypereutectic Mg–3 wt.% Si alloy has been investigated using optical microscope, scanning electron microscope, X-ray diffraction and hardness measurements. The results indicate that the morphology of the primary Mg{sub 2}Si is changed from coarse dendrite into fine polygon with the increasing Gd content. The average size of the primary Mg{sub 2}Si significantly decreases with increasing Gd content up to 1.0 wt.%, and then slowly increases. Interestingly, when the Gd content is increased to 4.0 and 8.0 wt.%, the primary and eutectic Mg{sub 2}Si evidently decrease and even disappear. The modification and refinement of the primary Mg{sub 2}Si is mainly attributed to the poisoning effect. The GdMg{sub 2} phase in the primary Mg{sub 2}Si is obviously coarsened as the Gd content exceeds 2.0 wt.%. While the decrease and disappearance of the primary and eutectic Mg{sub 2}Si are ascribed to the formation of vast GdSi compound. Therefore, it is reasonable to conclude that proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. - Highlights: ► Proper Gd (1.0 wt.%) addition can effectively modify and refine the primary Mg{sub 2}Si. ► We studied the reaction feasibility between Mg and Si, Gd and Si in Mg–Gd–Si system. ► We explored the modification mechanism of Gd modifier on Mg{sub 2}Si.

  11. SiO2-P2O5-HfO2-Al2O3-Na2O glasses activated by Er3+ ions: From bulk sample to planar waveguide fabricated by rf-sputtering

    NASA Astrophysics Data System (ADS)

    Chiasera, A.; Vasilchenko, I.; Dorosz, D.; Cotti, M.; Varas, S.; Iacob, E.; Speranza, G.; Vaccari, A.; Valligatla, S.; Zur, L.; Lukowiak, A.; Righini, G. C.; Ferrari, M.

    2017-01-01

    0.4 Er3+-doped 90.7 SiO2 - 4.4 P2O5 - 2.3 HfO2 - 1.7 Al2O3 - 0.7 Na2O planar waveguide was fabricated by multi-target rf-sputtering technique starting by massive Er3+-activated P2O5-SiO2-Al2O3-Na2O glass. The optical parameters were measured by m-line apparatus operating at 632.8, 1319 and 1542 nm. The waveguide compositions were investigated by Energy Dispersive X-ray Spectroscopy and its morphology analyzed by Atomic Force Microscopy. The waveguide exhibits a single propagation mode at 1319 and 1542 nm with an attenuation coefficient of 0.2 dB/cm in the infrared. The emission of 4I13/2 → 4I15/2 transition of Er3+ ion, with a 28.5 nm bandwidth was observed upon TE0 mode excitation at 514.5 nm. The optical and spectroscopic features of the Er3+-activated parent P2O5-SiO2-Al2O3-Na2O glass were also investigated.

  12. Microstructure and intrinsic stress evolution during epitaxial film growth of an Ag0.93Al0.07 solid solution on Si(111); excessive planar faulting due to quantum confinement

    NASA Astrophysics Data System (ADS)

    Flötotto, D.; Wang, Z. M.; Markel, I. J.; Kurz, S. J. B.; Mittemeijer, E. J.

    2016-10-01

    The correlation of microstructural development and the kinetics of film growth has been investigated during the epitaxial film growth of an ultrathin binary Ag0.93Al0.07 solid solution on a Si(111)-7×7 surface at 300 K by the combination of high-resolution transmission electron microscopy, X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction, and real-time in-situ stress measurements. Up to a film thickness of 6 ± 2 nm, epitaxial Ag0.93Al0.07 film growth is characterized by the strikingly extensive formation of planar faults parallel to the film/substrate interface, while at larger thickness the film grows practically defect-free. As revealed by real-time in-situ stress measurements, the extensive formation of planar faults at the very initial stage of growth is not driven by the reduction of the system's elastic strain energy but is rather caused by a striking thickness-dependence of the stacking-fault energy owing to a quantum size effect of the ultrathin metal alloy film, resulting in a frequent succession of fcc and hcp stackings of close-packed layers during the initial stage of film growth. The extensive development of planar faults at the initial stage of film growth (<6 ± 2 nm) is associated with the occurrence of a high density of kinks and corners at thereby atomically rough surface ledges, which strongly enhances the downward transport of adatoms from higher to lower terraces (interlayer mass transport) by a reduction of the effective diffusion barrier at the edge of surface steps and by increasing the driving force for adatoms to attach to the surface ledges. As a result, the epitaxial Ag0.93Al0.07 film initially grows in a 2D layer-by-layer type of growth and thus establishes atomically smooth film surfaces. For the practically planar-fault-free growth at thicknesses beyond 6 ± 2 nm, interlayer mass transport becomes distinctively limited, thereby inducing a transition from 2D to 3D type of film growth.

  13. Ultrathin Al2O3 interface achieving an 11.46% efficiency in planar n-Si/PEDOT:PSS hybrid solar cells

    NASA Astrophysics Data System (ADS)

    Nam, Yoon-Ho; Song, Jae-Won; Park, Min-Joon; Sami, Abdul; Lee, Jung-Ho

    2017-04-01

    Hybrid organic-inorganic photovoltaic devices consisting of poly(3,4-etyhlenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type silicon have recently been investigated for their cost-efficiency and ease of fabrication. We demonstrate that the insertion of an ultrathin Al2O3 layer between n-Si and PEDOT:PSS significantly improves photovoltaic performance in comparison to the conventional interfacial oxide employing SiO2. A power-conversion efficiency of 11.46% was recorded at the optimal Al2O3 thickness of 2.3 nm. This result was achieved based upon increased built-in potential and improved charge collection via the electron blocking effect of Al2O3. In addition, the hydrophilicity enhanced by Al2O3 improved the coating uniformity of the PEDOT:PSS layer, resulting in a further reduction in surface recombination.

  14. Monte Carlo study on the imaging performance of powder Lu2SiO5:Ce phosphor screens under x-ray excitation: comparison with Gd2O2S:Tb screens.

    PubMed

    Liaparinos, Panagiotis F; Kandarakis, Ioannis S; Cavouras, Dionisis A; Delis, Harry B; Panayiotakis, George S

    2007-05-01

    Lu2SiO5: Ce (LSO) scintillator is a relatively new luminescent material which has been successfully applied in positron emission tomography systems. Since it has been recently commercially available in powder form, it could be of value to investigate its performance for use in x-ray projection imaging as both physical and scintillating properties indicate a promising material for such applications. In the present study, a custom and validated Monte Carlo simulation code was used in order to examine the performance of LSO, under diagnostic radiology (mammography and general radiography) conditions. The Monte Carlo code was based on a model using Mie scattering theory for the description of light attenuation. Imaging characteristics, related to image brightness, spatial resolution and noise of LSO screens were predicted using only physical parameters of the phosphor. The overall performance of LSO powder phosphor screens was investigated in terms of the: (i) quantum detection efficiency (ii) emitted K-characteristic radiation (iii) luminescence efficiency (iv) modulation transfer function (v) Swank factor and (vi) zero-frequency detective quantum efficiency [DQE(0)]. Results were compared to the traditional rare-earth Gd2O2S:Tb (GOS) phosphor material. The relative luminescence efficiency of LSO phosphor was found inferior to that of GOS. This is due to the lower intrinsic conversion efficiency of LSO (0.08 instead of 0.15 of GOS) and the relatively high light extinction coefficient mext of this phosphor (0.239 mircom(-1) instead of 0.218 /microm(-1) for GOS). However, the property of increased light extinction combined with the rather sharp angular distribution of scattered light photons (anisotropy factor g=0.624 for LSO instead of 0.494 for GOS) reduce lateral light spreading and improve spatial resolution. In addition, LSO screens were found to exhibit better x-ray absorption as well as higher signal to noise transfer properties in the energy range from 18 keV up

  15. SiO 2-CaO-B 2O 3-Al 2O 3 ceramic glaze as sealant for planar ITSOFC

    NASA Astrophysics Data System (ADS)

    Zheng, R.; Wang, S. R.; Nie, H. W.; Wen, T.-L.

    A series of ceramic glazes based on the SiO 2-CaO-B 2O 3-Al 2O 3 system as sealant for intermediate temperature solid oxide fuel cell (ITSOFC) were investigated. Different ratios of B 2O 3/SiO 2 and Al 2O 3/CaO were investigated to control softening process, phase separation, and crystallization. When B 2O 3/SiO 2 ratio was in the range of 0.14-0.27, the glazes showed good wetting and bonding behavior with both 8 mol% yttria-stabilized zirconia (8YSZ) electrolyte and stainless steel interconnect which could satisfy the sealing demand at 850 °C. And the dimension stability can be kept for over 100 h by introducing ceramic felt and controlling the glazes viscosity in the range of 10 4 to 10 6 Pa s. By means of controlling Al 2O 3/CaO ratio in the range of 0.4-0.68, phase separation and crystallization were restrained effectively. After holding at 850 °C for 100 h, non-crystalline network in the glazes could be found, and a suitable viscous flow could well relax thermal stress. The sealing was effective even after 10 thermal cycles. Element analysis showed a good chemical stability at the ceramic glazes/stainless steel interconnect and ceramic glazes/8YSZ electrolyte interfaces.

  16. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

    NASA Astrophysics Data System (ADS)

    Cipro, R.; Baron, T.; Martin, M.; Moeyaert, J.; David, S.; Gorbenko, V.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.

    2014-06-01

    Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO2 cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.

  17. [Silencing HSV1 gD expression in cultured cells by RNA interference].

    PubMed

    Zhu, Qin-Chang; Ren, Zhe; Zhang, Chun-Long; Zhang, Mei-Ying; Liao, Hong-Juan; Liu, Qiu-Ying; Zhang, Pei-Zhuo; Li, Jiu-Xiang; Hu, Chao-Feng; Wang, Hua-Dong; Wang, Yi-Fei

    2007-01-01

    To explore the anti-HSV-1 effect of silencing gD gene expression by RNA interference, five 21-nucleotide duplex small interfering RNAs(siRNAs) targeting the HSV1 gD sequence were designed and the gD-EGFP fusion gene expression vector was constructed, then co-transfected into Vero cell, and screened the effective siRNA through analyzing the intensity of the EGFP fluorescence. Finally, the anti-HSV1 effect was confirmed by plaque reduction assay, real-time PCR and daughter virus titration of HSV1 infected Vero cells transfected with siRNAs. The study demonstrated that siRNAs could effectively and specifically inhibit gD gene expression in HSV1-infected cells, but only had a little effect on HSV1 infection, so taking gD as the target of siRNA against HSV1 needs further study.

  18. Pulsed laser-deposited nanocrystalline GdB6 thin films on W and Re as field emitters

    NASA Astrophysics Data System (ADS)

    Suryawanshi, Sachin R.; Singh, Anil K.; Phase, Deodatta M.; Late, Dattatray J.; Sinha, Sucharita; More, Mahendra A.

    2016-10-01

    Gadolinium hexaboride (GdB6) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB6 on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB6/W and GdB6/Re emitters were performed in a planar diode configuration at the base pressure ~10-8 mbar. The GdB6/W and GdB6/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/cm2 at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler-Nordheim ( F- N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor ( β) estimated using the slopes of the F- N plots indicate that the PLD GdB6 coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB6/W and GdB6/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB6/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB6/W emitter are markedly different from that of GdB6/Re emitter, which can be attributed to the growth of GdB6 films on W and Re substrates.

  19. Tumor targeting and MR imaging with lipophilic cyanine-mediated near-infrared responsive porous Gd silicate nanoparticles.

    PubMed

    Yeh, Chen-Sheng; Su, Chia-Hao; Ho, Wen-Yueh; Huang, Chih-Chia; Chang, Jui-Cheng; Chien, Yi-Hsin; Hung, Shu-Ting; Liau, Min-Chiau; Ho, Hsin-Yi

    2013-07-01

    We synthesize a NIR MHI-148 dye, a lipophilic heptamethine cyanine, with capability in tumor-targeting property to accumulate in the mitochondria of tumor. In the context of MHI-148 dye, we demonstrate effective tumor targeting and NIR fluorescence in vitro and in vivo for MHI-148 as compared to ICG. A series of porous Gd silicates related nanoparticles, i.e. Gd silicate, Gd silicate@mSiO(2) (mSiO(2): mesoporous silica shell), and Gd(3+)-chelated Gd silicate@mSiO(2) (Gd(3+)-DOTA chelated on the mSiO(2)) are fabricated to demonstrate their magnetic resonance (MR) contrast imaging effects. Those Gd silicates related nanoparticles exhibit dual MR effect, expressing T(1)-brightened and T(2)-darkened effects, in lower magnetic field. In high magnetic field, an abnormal enhanced transverse relaxivity (r(2)) appears, showing an effective T(2)-lowering effect, possibly due to concentrated Gd amount and porous architecture. The r(2) value increases 4-5 times as the field strength increased from 3T to 7T. The Gd(3+)-chelated Gd silicate@mSiO(2) has given large r(2) (T(2)-lowering effect) up to 343.8 s(-1) mM(-1), which is even larger than the reported magnetic Fe(3)O(4) nanoparticles measured at the same field. Using a 9.4T animal micro MRI system we have seen effectively darken in signal for those porous Gd silicates related NPs, while no such phenomenon appears in commercial Gd-DOTA agent. The MHI-148 is then conjugated on the porous Gd silicate@mSiO(2) nanoparticles for a new paradigm with three functionalities for in vivo tumor targeting, near-infrared fluorescent and MR imaging by means of only using MHI-148 dye.

  20. The morphology of GM1 x/SM 0.6-x/Chol 0.4 planar bilayers supported on SiO 2 surfaces

    NASA Astrophysics Data System (ADS)

    Mao, Yanli; Tero, Ryugo; Imai, Yosuke; Hoshino, Tyuji; Urisu, Tsuneo

    2008-07-01

    Ganglioside GM1 (GM1), sphingomyelin (SM) and cholesterol (Chol) are dominant lipid components of rafts in plasma membranes. The morphology of GM1 x/SM 0.6-x/Chol 0.4 SPBs on SiO 2 surfaces has been studied by atomic force microscopy and fluorescence microscopy at various ratios of GM1/SM ( x = 0-0.25). The unique changes in morphology depending on the GM1 concentrations are qualitatively explained by hydrogen bonding and the hydrophobic interactions between SM and Chol, and by hydrogen bonding and the steric effects between bulky GM1 headgroups under Ca 2+ existing conditions and the electrostatic repulsion between the negative charges of GM1 headgroups under Ca 2+ nonexisting conditions.

  1. Formation of Gd coordination polymer with 1D chains mediated by Bronsted acidic ionic liquids

    NASA Astrophysics Data System (ADS)

    Luo, Qianqian; Han, Ying; Lin, Hechun; Zhang, Yuanyuan; Duan, Chungang; Peng, Hui

    2017-03-01

    One dimensional coordination polymer Gd[(SO4)(NO3)(C2H6SO)2] (1) is prepared through the mediation of Bronsted acid ionic liquid, which crystallized in the monoclinic space of C2/c. In this polymer, adjacent Gd atoms are linked by two SO42- ions to generate a 1-D chain, and all oxygen atoms in SO42- groups are connected to three nearest Gd atoms in μ3:η1:η1:η2 fashion. Gd, S and N from SO42- and NO3- are precisely coplanar. The planar is coordinated by a pair of DMSO molecules, which is parallel and linked by hydrogen bonding to form a three-dimensional supramolecular network. Magnetic susceptibility measurement of 1 reveals weak antiferromagnetic interactions between the Gd (III) ions. It exhibits relatively large magneto-caloric effect with -ΔSm=28.8 J Kg-1 K-1 for ΔH=7 T.

  2. Smearing origin of zero-bias conductance peak in Ag-SiO-Bi2Sr2CaCu2O8+δ planar tunnel junctions: influence of diffusive normal metal verified with the circuit theory

    NASA Astrophysics Data System (ADS)

    Shigeta, I.; Tanaka, Y.; Ichikawa, F.; Asano, Y.

    2006-11-01

    We propose a new approach of smearing origins of a zero-bias conductance peak (ZBCP) in high-Tc superconductor tunnel junctions through the analysis based on the circuit theory for a d-wave pairing symmetry. The circuit theory has been recently developed from conventional superconductors to unconventional superconductors. The ZBCP frequently appears in line shapes for this theory, in which the total resistance was constructed by taking account of the effects between a d-wave superconductor and a diffusive normal metal (DN) at a junction interface, including the midgap Andreev resonant states (MARS), the coherent Andreev reflection (CAR) and the proximity effect. Therefore, we have analyzed experimental spectra with the ZBCP of Ag-SiO-Bi2Sr2CaCu2O8+δ (Bi-2212) planar tunnel junctions for the {110}-oriented direction by using a simplified formula of the circuit theory for d-wave superconductors. The fitting results reveal that the spectral features of the ZBCP are well explained by the circuit theory not only excluding the Dynes's broadening factor but also considering only the MARS and the DN resistance. Thus, the ZBCP behaviors are understood to be consistent with those of recent studies on the circuit theory extended to the systems containing d-wave superconductor tunnel junctions.

  3. Perpendicular Magnetic Anisotropy of Tb/Fe and Gd/Fe Multilayers Studied with Torque Magnetometer

    NASA Astrophysics Data System (ADS)

    Chowdhury, Ataur

    Perpendicular magnetic anisotropy (PMA) of multilayers critically depend on the magnetic and structural ordering of the interface. To study the effect of interface on PMA, Tb/Fe and Gd/Fe multilayers with varying Fe (0.8-9.0 nm) and Gd (0.5-2.8 nm) or Tb (0.3-6.3 nm) layer thicknesses were fabricated by planar magnetron sputtering. The magnetometer results of spin orientation clearly reveals that samples with Gd or Tb layer thickness of more than 1.2 nm display no PMA, regardless of the Fe layer thickness. Tb/Fe and Gd/Fe multilayers with thin (<1.2 nm) Tb or Gd layers display large PMA, but no PMA is observed when the Fe layer thickness is increased to 4.0 nm and higher. The bulk magnetization and anisotropy energy constant of the samples are found to increase with increasing Fe layer thickness. Torque measurement also reveals that there are two distinctly different axes of spin alignment at different energy. Tb/Fe and Gd/Fe multilayers with similar composition reveal similar magnetic and structural characteristics, and it may imply that single-ion-anisotropy of rare-earth element, which is quite large for Tb ions and very small for Gd ions, may not be the dominating cause of PMA in Td/Fe and Gd/Fe multilayers. A detailed explanation of the results will be provided based on exchange interaction at the interface.

  4. Tuning interfacial domain walls in GdCo/Gd/GdCo' spring magnets

    NASA Astrophysics Data System (ADS)

    Blanco-Roldán, C.; Choi, Y.; Quirós, C.; Valvidares, S. M.; Zarate, R.; Vélez, M.; Alameda, J. M.; Haskel, D.; Martín, J. I.

    2015-12-01

    Spring magnets based on GdCo multilayers have been prepared to study the nucleation and evolution of interfacial domain walls (iDWs) depending on layer composition and interlayer coupling. GdCo alloy compositions in each layer were chosen so that their net magnetization aligns either with the Gd (G d35C o65 ) or Co (G d11C o89 ) sublattices. This condition forces an antiparallel arrangement of the layers' net magnetization and leads to nucleation of iDWs above critical magnetic fields whose values are dictated by the interplay between Zeeman and exchange energies. By combining x-ray resonant magnetic scattering with Kerr magnetometry, we provide detailed insight into the nucleation and spatial profile of the iDWs. For strong coupling (GdCo/GdCo' bilayer), iDWs are centered at the interface but with asymmetric width depending on each layer magnetization. When interlayer coupling is weakened by introducing a thin Gd interlayer, the exchange spring effect becomes restricted to a lower temperature and field range than observed in the bilayer structure. Due to the ferromagnetic alignment between the high magnetization G d35C o65 layer and the Gd interlayer, the iDW shrinks and moves into the lower exchange Gd interlayer, causing a reduction of iDW energy.

  5. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

    PubMed

    Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

    2016-12-01

    A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd(2+) oxidation states lead to change Gd(3+) states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd(3+) ions, and the H2O2 sensing mechanism has been explained as well.

  6. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

    2016-09-01

    A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd2+ oxidation states lead to change Gd3+ states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd3+ ions, and the H2O2 sensing mechanism has been explained as well.

  7. Integrating AlN with GdN Thin Films in an in Situ CVD Process: Influence on the Oxidation and Crystallinity of GdN.

    PubMed

    Cwik, Stefan; Beer, Sebastian M J; Hoffmann, Stefanie; Krasnopolski, Michael; Rogalla, Detlef; Becker, Hans-Werner; Peeters, Daniel; Ney, Andreas; Devi, Anjana

    2017-08-16

    The application potential of rare earth nitride (REN) materials has been limited due to their high sensitivity to air and moisture leading to facile oxidation upon exposure to ambient conditions. For the growth of device quality films, physical vapor deposition methods, such as molecular beam epitaxy, have been established in the past. In this regard, aluminum nitride (AlN) has been employed as a capping layer to protect the functional gadolinium nitride (GdN) from interaction with the atmosphere. In addition, an AlN buffer was employed between a silicon substrate and GdN serving as a seeding layer for epitaxial growth. In pursuit to grow high-quality GdN thin films by chemical vapor deposition (CVD), this successful concept is transferred to an in situ CVD process. Thereby, AlN thin films are included step-wise in the stack starting with Si/GdN/AlN structures to realize long-term stability of the oxophilic GdN layer. As a second strategy, a Si/AlN/GdN/AlN stacked structure was grown, where the additional buffer layer serves as the seeding layer to promote crystalline GdN growth. In addition, chemical interaction between GdN and the Si substrate can be prevented by spatial segregation. The stacked structures grown for the first time with a continuous CVD process were subjected to a detailed investigation in terms of structure, morphology, and composition, revealing an improved GdN purity with respect to earlier grown CVD thin films. Employing thin AlN buffer layers, the crystallinity of the GdN films on Si(100) could additionally be significantly enhanced. Finally, the magnetic properties of the fabricated stacks were evaluated by performing superconducting quantum interference device measurements, both of the as-deposited films and after exposure to ambient conditions, suggesting superparamagnetism of ferromagnetic GdN grains. The consistency of the magnetic properties precludes oxidation of the REN material due to the amorphous AlN capping layer.

  8. Enhancement of malignant properties of human osteosarcoma cells with disialyl gangliosides GD2/GD3.

    PubMed

    Shibuya, Hidenobu; Hamamura, Kazunori; Hotta, Hiroshi; Matsumoto, Yasuyuki; Nishida, Yoshihiro; Hattori, Hisashi; Furukawa, Keiko; Ueda, Minoru; Furukawa, Koichi

    2012-09-01

    The expression and implications of gangliosides in human osteosarcomas have not been systematically analyzed. In this study, we showed that gangliosides GD3 and GD2 are highly expressed in the majority of human osteosarcoma cell lines derived from oral cavity regions. Introduction of GD3 synthase cDNA into a GD3/GD2-negative (GD3/GD2-) human osteosarcoma subline resulted in the establishment of GD3/GD2+ transfectant cells. They showed increased cell migration and invasion activities in wound healing and Boyden chamber invasion assays, respectively, compared to the control cells. When treated with serum, GD3/GD2+ cells showed stronger tyrosine phosphorylation of p130Cas, focal adhesion kinase, and paxillin than GD3/GD2- cells. In particular, paxillin underwent much stronger phosphorylation, suggesting its role in cell motility. Furthermore, we tried to dissect the roles of GD3 and GD2 in the malignant properties of the transfectant cells by establishing single ganglioside-expressing cells, that is, either GD3 or GD2. Although GD3/GD2+ cells showed the most malignant properties, GD2+ cells showed almost equivalent levels to GD3/GD2+ cells in invasion and migration activities, and in the intensities of tyrosine phosphorylation of paxillin. Among Src family kinases, Lyn was expressed predominantly, and was involved in the invasion and motility of GD3- and/or GD2-expressing transfectants. Furthermore, it was elucidated by gene silencing that Lyn was located in a different pathway from that of FAK to eventually lead paxillin activation. These results suggested that GD2/GD3 are responsible for the enhancement of the malignant features of osteosarcomas, and might be candidate targets in molecular-targeted therapy. © 2012 Japanese Cancer Association.

  9. Ternary rare-earth bismuthides RE{sub 5}SiBi{sub 2} and RE{sub 5}GeBi{sub 2} (RE=La-Nd, Gd-Er): Stabilization of the {beta}-Yb{sub 5}Sb{sub 3}-type structure through tetrel substitution

    SciTech Connect

    Barry, Stephen D.; Tkachuk, Andriy V.; Bie, Haiying; Blanchard, Peter E.R.; Mar, Arthur

    2011-01-15

    Ternary bismuthides RE{sub 5}TtBi{sub 2} containing rare-earth (RE=La-Nd, Gd-Er) and tetrel (Tt=Si, Ge) atoms have been prepared by arc-melting of the elements followed by annealing at 800 {sup o}C. They adopt the {beta}-Yb{sub 5}Sb{sub 3}-type structure (Pearson symbol oP32, space group Pnma, Z=4), as revealed through analysis by single-crystal X-ray diffraction on Ce{sub 5}Si{sub 0.869(4)}Bi{sub 2.131(4)} and powder X-ray diffraction on Ce{sub 5}GeBi{sub 2}. Cell parameters for the entire series lie in the ranges of a=12.8-11.8 A, b=9.6-9.0 A, and c=8.4-7.9 A. Solid solubility in Ce{sub 5}Si{sub x}Bi{sub 3-x} and Pr{sub 5}Si{sub x}Bi{sub 3-x} (approximately 0.9{<=}x{<=}1.2, depending on the RE member) is much more limited compared to the antimonides, consistent with a highly ordered structure in which the two possible anion sites are essentially segregated into a smaller one occupied by Tt atoms (CN7) and a larger one occupied by Bi atoms (CN9). Band structure calculations on La{sub 5}SiBi{sub 2} confirm the importance of La-La bonding interactions near the Fermi level. X-ray photoelectron spectra support the presence of partially anionic Bi atoms, as indicated by a small negative binding energy shift relative to elemental Bi. The Ce and Pr members undergo magnetic transitions at low temperatures, possibly involving ferromagnetic interactions, that are strongly influenced by the nature of the Tt atom. -- Graphical Abstract: Tetrel (Si or Ge) and Bi atoms are arranged in an ordered manner in the {beta}-Yb{sub 5}Sb{sub 3}-type structure adopted by RE{sub 5}TtBi{sub 2}. Display Omitted

  10. GdPtPb: A noncollinear antiferromagnet with distorted kagome lattice

    NASA Astrophysics Data System (ADS)

    Manni, S.; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-08-01

    In the spirit of searching for Gd-based, frustrated, rare earth magnets, we have found antiferomagnetism (AF) in GdPtPb, which crystallizes in the ZrNiAl-type structure that has a distorted kagome lattice of Gd triangles. Single crystals were grown and investigated using structural, magnetic, transport, and thermodynamic measurements. GdPtPb orders antiferromagnetically at 15.5 K, arguably with a planar, noncollinear structure. The high temperature magnetic susceptibility data reveal an "anti-frustration" behavior having a frustration parameter, |f | =|Θ | /TN=0.25 , which can be explained by mean field theory within a two-sublattice model. Study of the magnetic phase diagram down to T =1.8 K reveals a change of magnetic structure through a metamagnetic transition at around 20 kOe and the disappearance of the AF ordering near 140 kOe. In total, our work indicates that GdPtPb can serve as an example of a planar, noncollinear AF with a distorted kagome magnetic sublattice.

  11. GdPtPb: A noncollinear antiferromagnet with distorted kagome lattice

    DOE PAGES

    Manni, S.; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-08-24

    In the spirit of searching for Gd-based, frustrated, rare earth magnets, we have found antiferomagnetism (AF) in GdPtPb, which crystallizes in the ZrNiAl-type structure that has a distorted kagome lattice of Gd triangles. Single crystals were grown and investigated using structural, magnetic, transport, and thermodynamic measurements. GdPtPb orders antiferromagnetically at 15.5 K, arguably with a planar, noncollinear structure. The high temperature magnetic susceptibility data reveal an “anti-frustration” behavior having a frustration parameter, |f| = |Θ|/TN = 0.25, which can be explained by mean field theory within a two-sublattice model. Here, the study of the magnetic phase diagram down to Tmore » = 1.8K reveals a change of magnetic structure through a metamagnetic transition at around 20 kOe and the disappearance of the AF ordering near 140 kOe. In total, our work indicates that GdPtPb can serve as an example of a planar, noncollinear AF with a distorted kagome magnetic sublattice.« less

  12. Peculiarities of thermoelectric half-Heusler phase formation in Gd-Ni-Sb and Lu-Ni-Sb ternary systems

    NASA Astrophysics Data System (ADS)

    Romaka, V. V.; Romaka, L.; Horyn, A.; Rogl, P.; Stadnyk, Yu; Melnychenko, N.; Orlovskyy, M.; Krayovskyy, V.

    2016-07-01

    The phase equilibria in the Gd-Ni-Sb and Lu-Ni-Sb ternary systems were studied at 873 K by X-ray and metallographic analyses in the whole concentration range. The interaction of the elements in the Gd-Ni-Sb system results the formation of five ternary compounds at investigated temperature: Gd5Ni2Sb (Mo5SiB2-type), Gd5NiSb2 (Yb5Sb3-type), GdNiSb (MgAgAs-type), Gd3Ni6Sb5 (Y3Ni6Sb5-type), and GdNi0.72Sb2 (HfCuSi2-type). At investigated temperature the Lu-Ni-Sb system is characterized by formation of the LuNiSb (MgAgAs-type), Lu5Ni2Sb (Mo5SiB2-type), and Lu5Ni0.56Sb2.44 (Yb5Sb3-type) compounds. The disordering in the crystal structure of half-Heusler GdNiSb and LuNiSb was revealed by EPMA and studied by means of Rietveld refinement and DFT modeling. The performed electronic structure calculations are in good agreement with electrical transport property studies.

  13. Abnormal thermal expansion, multiple transitions, magnetocaloric effect, and electronic structure of Gd6Co4.85

    NASA Astrophysics Data System (ADS)

    Zhang, Jiliang; Zheng, Zhigang; Shan, Guangcun; Bobev, Svilen; Shek, Chan Hung

    2015-10-01

    The structure of known Gd4Co3 compound is re-determined as Gd6Co4.85, adopting the Gd6Co1.67Si3 structure type, which is characterized by two disorder Co sites filling the Gd octahedral and a short Gd-Gd distance within the octahedra. The compound shows uniaxial negative thermal expansion in paramagnetic state, significant negative expansion in ferromagnetic state, and positive expansion below ca. 140 K. It also exhibits large magnetocaloric effect, with an entropy change of -6.4 J kg-1 K-1 at 50 kOe. In the lattice of the compound, Co atoms at different sites show different spin states. It was confirmed by the X-ray photoelectron spectra and calculation of electronic structure and shed lights on the abnormal thermal expansion. The stability of such compound and the origin of its magnetism are also discussed based on measured and calculated electronic structures.

  14. Spectroscopy of Gd153 and Gd157 using the (p,dγ) reaction

    SciTech Connect

    Ross, T. J.; Hughes, R. O.; Allmond, J. M.; Beausang, C. W.; Angell, C. T.; Basunia, M. S.; Bleuel, D. L.; Burke, J. T.; Casperson, R. J.; Escher, J. E.; Fallon, P.; Hatarik, R.; Munson, J.; Paschalis, S.; Petri, M.; Phair, L. W.; Ressler, J. J.; Scielzo, N. D.

    2014-10-31

    Low-spin single quasineutron levels in 153Gd and 157Gd have been studied following the 154Gd(p,d-γ )153Gd and 158Gd(p,d-γ )157Gd reactions. A combined Si telescope and high-purity germanium array was utilized, allowing d-γ and d-γ-γ coincidence measurements. Almost all of the established low-excitation-energy, low-spin structures were confirmed in both 153Gd and 157Gd. Several new levels and numerous new rays are observed in both nuclei, particularly for Ex ≥1 MeV. Lastly, residual effects of a neutron subshell closure at N = 64 are observed in the form of a large excitation energy gap in the single quasineutron level schemes.

  15. Observations on the Influence of Secondary Me Oxides Additives (Me=Si,Al, Mg) on the Microstructural Evolution and Mechanical Behavior of Silicon Nitride Ceramics Containing RE2O3 (RE=La, Gd, Lu)

    SciTech Connect

    Becher, Paul F; Averill, Frank; Lin, Hua-Tay; Waters, Shirley B; Shibata, Naoya; Painter, Gayle S; van Benthem, Klaus

    2010-01-01

    The evolution of β Si3N4 microstructures is influenced by the adsorption of rare earth elements at grain surfaces and by the viscosity of the intergranular phases. Theoretical and STEM studies show that the RE atoms exhibit different tendencies to segregate from the liquid phase to grain surfaces and different binding strengths at these surfaces. When combined with MgO (or Al2O3) secondary additions, the rare earth additives are combined in low viscosity intergranular phases during densification and the α to β phase transformation and microstructural evolution are dominated by the RE adsorption behavior. On the other hand, a much higher viscosity intergranular phase forms when the RE2O3 are combined with SiO2. While the rare earth adsorption behavior remains the same, the phase transformation and microstructure are now dominated by Si3N4 solubility and transport in the high liquid phase. By understanding these additive effects, one can develop reinforced microstructures leading silicon nitride ceramics with greatly improved mechanical behavior.

  16. Planar gradient metamaterials

    NASA Astrophysics Data System (ADS)

    Xu, Yadong; Fu, Yangyang; Chen, Huanyang

    2016-12-01

    Metamaterials possess exotic properties that do not exist in nature. Gradient metamaterials, which are characterized by a continuous spatial variation of their properties, provide a promising approach to the development of both bulk and planar optics. In particular, planar gradient metamaterials can be classified into three categories: gradient metasurfaces, gradient index metamaterials and gradient metallic gratings. In this Review, we summarize the progress made in the theoretical modelling of these materials, in their experimental implementation and in the design of functional devices. We discuss the use of planar gradient metamaterials for wave bending and focusing in free space, for supporting surface plasmon polaritons and for the realization of trapped rainbows. We also focus on the implementation of these materials in waveguide systems, which can enable electromagnetic cloaking, Fano resonances, asymmetric transmission and guided mode conversion. Finally, we discuss promising trends, such as the use of dielectric rather than metallic unit elements and the use of planar gradient metamaterials in 3D systems.

  17. Inelastic Neutron Scattering on 160Gd

    NASA Astrophysics Data System (ADS)

    Lesher, S. R.; Casarella, C.; Crider, B. P.; Ikeyama, R.; Marsh, I.; Peters, E. E.; Prados-Estévez, F. M.; Smith, M. K.; Tully, Z.; Vanhoy, J. R.; Aprahamian, A.; Yates, S. W.

    2014-03-01

    The nature of low-lying excitations, Kπ=0+ bands in deformed nuclei remain enigmatic in the field, especially in relationship to quadrupole vibrations. One method of characterizing these states beyond excitation energies is through measurements of absolute transition probabilities. In the rare earth region of deformation, there are five stable Gd isotopes, 154Gd, 156Gd, and 158Gd have been studied to obtain B(E2) values, a fourth, 160Gd is the focus of this work. We have examined 160Gd with the (n, n'γ) reaction and neutron energies up to 3.0 MeV to confirm known 0+ states.

  18. Temperature Evolution of the Gd Magnetization Profile in Strongly Coupled Gd/Fe Multilayers

    DTIC Science & Technology

    2004-10-27

    roughness between the Gd sublayers sse, GdGd =0d. With these parameters, the charge-magnetic specular re- flectivity curves were calculated using the BA model...indicated temperatures. The relative magnetization of the Gd sublayers are Mint and Mmid. For all tem- peratures, se,GdFe=3.0±1.1 Å, se, GdGd =0 Å. The fitted...thickness of Gd sublayers adjacent to the Fe layers is dint=3.94±0.09 Å at all temperatures. T sKd Mint Mmid sm,GdFe sÅd sm, GdGd sÅd 300 1.00±0.12

  19. Learning planar ising models

    SciTech Connect

    Johnson, Jason K; Chertkov, Michael; Netrapalli, Praneeth

    2010-11-12

    Inference and learning of graphical models are both well-studied problems in statistics and machine learning that have found many applications in science and engineering. However, exact inference is intractable in general graphical models, which suggests the problem of seeking the best approximation to a collection of random variables within some tractable family of graphical models. In this paper, we focus our attention on the class of planar Ising models, for which inference is tractable using techniques of statistical physics [Kac and Ward; Kasteleyn]. Based on these techniques and recent methods for planarity testing and planar embedding [Chrobak and Payne], we propose a simple greedy algorithm for learning the best planar Ising model to approximate an arbitrary collection of binary random variables (possibly from sample data). Given the set of all pairwise correlations among variables, we select a planar graph and optimal planar Ising model defined on this graph to best approximate that set of correlations. We present the results of numerical experiments evaluating the performance of our algorithm.

  20. Learning planar Ising models

    DOE PAGES

    Johnson, Jason K.; Oyen, Diane Adele; Chertkov, Michael; ...

    2016-12-01

    Inference and learning of graphical models are both well-studied problems in statistics and machine learning that have found many applications in science and engineering. However, exact inference is intractable in general graphical models, which suggests the problem of seeking the best approximation to a collection of random variables within some tractable family of graphical models. In this paper, we focus on the class of planar Ising models, for which exact inference is tractable using techniques of statistical physics. Based on these techniques and recent methods for planarity testing and planar embedding, we propose a greedy algorithm for learning the bestmore » planar Ising model to approximate an arbitrary collection of binary random variables (possibly from sample data). Given the set of all pairwise correlations among variables, we select a planar graph and optimal planar Ising model defined on this graph to best approximate that set of correlations. Finally, we demonstrate our method in simulations and for two applications: modeling senate voting records and identifying geo-chemical depth trends from Mars rover data.« less

  1. Learning planar Ising models

    SciTech Connect

    Johnson, Jason K.; Oyen, Diane Adele; Chertkov, Michael; Netrapalli, Praneeth

    2016-12-01

    Inference and learning of graphical models are both well-studied problems in statistics and machine learning that have found many applications in science and engineering. However, exact inference is intractable in general graphical models, which suggests the problem of seeking the best approximation to a collection of random variables within some tractable family of graphical models. In this paper, we focus on the class of planar Ising models, for which exact inference is tractable using techniques of statistical physics. Based on these techniques and recent methods for planarity testing and planar embedding, we propose a greedy algorithm for learning the best planar Ising model to approximate an arbitrary collection of binary random variables (possibly from sample data). Given the set of all pairwise correlations among variables, we select a planar graph and optimal planar Ising model defined on this graph to best approximate that set of correlations. Finally, we demonstrate our method in simulations and for two applications: modeling senate voting records and identifying geo-chemical depth trends from Mars rover data.

  2. Continuum studies in Gd nuclei by particle- γ coincidences

    NASA Astrophysics Data System (ADS)

    Ross, T. J.; Hughes, R. O.; Beausang, C. W.; Allmond, J. M.; Burke, J. T.; Phair, L. W.; Scielzo, N.; Angell, C. T.; Basunia, M. S.; Bleuel, D. L.; Casperson, R. J.; Fallon, P.; Hatarik, R.; Munson, J.; Paschalis, S.; Petri, M.; Ressler, J. J.

    2011-04-01

    An experiment was carried out at the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory to study Gd isotopes in the vicinity of the N=90 transitional region. A 25 MeV proton beam was incident on 158 / 155 / 154Gd targets and used to populate states in 152-158Gd by (p,p'), (p,d) and (p,t) reactions. The exit channel is selected by gating on charged particles using the STARS Si-Telescope array, which also gives the excitation energy of the residual nucleus. Coincident γ information is obtained using the LIBERACE Clover array. Particle- γ coincidences provide a powerful tool for probing the residual nucleus [1]. For example, particles in coincidence with a specific γ ray produce a spectrum representing all levels populated in the nucleus that subsequently decay into the state from which the γ ray originates. Results will be presented that give an insight into the population distribution of the high level density region above the pair gap in the even-even Gd nuclei via light ion reactions.

  3. Pulsed laser planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, D.B.; Schmitt, R.L.

    1985-05-01

    Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 ..mu..s) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of metals is particularly well suited to multilevel systems which include ground or power planes. Results are presented for planarization of gold films on SiO/sub 2/ dielectric layers using a flashlamp-pumped dye laser. The pulse duration is approx.1 ..mu..s, which allows the heat pulse to uniformly penetrate the gold while not penetrating substantially through the underlying SiO/sub 2/ (hence not perturbing the lower levels of metal). Excellent planarization of the gold films is achieved (less than 0.1 ..mu..m surface roughness, even starting with extreme topographic variations), as well as improved conductivity. To demonstrate the process, numerous planarized two-layer structures (transmission lines under a ground plane) were fabricated and characterized. 9 refs., 2 figs.

  4. High-efficiency si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids.

    PubMed

    He, Lining; Lai, Donny; Wang, Hao; Jiang, Changyun; Rusli

    2012-06-11

    An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

  5. CaO-MgO-Al2O3-SiO2 (CMAS) corrosion of Gd2Zr2O7 and Sm2Zr2O7

    SciTech Connect

    Wang, Honglong; Bakal, Ahmet; Zhang, Xingxing; Tarwater, Emily; Sheng, Zhizhi; Fergus, Jeffrey W.

    2016-08-08

    Ceramic thermal barrier coatings are applied to superalloys used in gas turbine engineering to increase the operating temperature and the energy conversion efficiency. However, dust consisting of CaO-MgO-Al2O3-SiO2 (CMAS) from the air can be injected into the engines and corrode the thermal barrier coatings. Lanthanide zirconates are promising materials in thermal barrier coatings due to their low thermal conductivities, good phase stability and good corrosion resistance. However, the corrosion resistance mechanism of CMAS on lanthanide zirconates is still not clearly understood. In this work, the corrosion mechanism of Gd2Zr2O7 and Sm2Zr2O7 in CMAS is studied. Here, the results show that the CMAS can easily react with lanthanide zirconate thermal barrier coatings to form a dense layer, which can resist further corrosion

  6. A planar dodecasubstituted porphyrin

    SciTech Connect

    Senge, M.O.; Medforth, C.J.; Smith, K.M. ); Sparks, L.D.; Shelnutt, J.A. )

    1993-04-28

    Structural investigations of copper and nickel complexes of dodecasubstituted porphyrins bearing aryl groups at the meso positions and propano rings at the pyrrole [beta] positions reveal considerable differences in their macrocycle conformations. While the nickel complex NiTC5T(3,4,5-OMeP)P was found to exhibit a nonplanar conformation which is considerably more planar than that of other dodecasubstituted porphyrins, the corresponding copper complex CuTC5T(3,4,5-OMeP)P was planar. CuTC5T(3,4,5-OMeP)P thus represents the first example of a completely planar dodecasubstituted porphyrin. The crystal structures of both porphyrins reveal that the C[sub b]-C[sub b]-CH[sub 2] angle is 13[degrees] smaller than in OEP derivatives. This change, which moves the methylene and aryl substituents further apart, effectively removes the steric repulsion responsible for the very nonplanar conformations observed for other dodecasubstituted porphyrins. Molecular mechanics calculations using a porphyrin force field correctly predict a planar macrocycle conformation. The possible reasons for the discrepancy between the observed moderately nonplanar structure and the calculated planar structure for NiTC5T(3,4,5-OMeP)P are discussed. The usefulness of spectroscopic probes (NMR, resonance Raman, electronic absorption) in predicting the planarity of dodecasubstituted porphyrins is also examined. The identification of a planar dodecasubstituted porphyrin further indicates the flexibility of the tetrapyrrole macrocycle and has implications for the study of nonplanarity in synthetic porphyrins and metallotetrapyrrole containing biomolecules. 32 refs., 6 figs., 7 tabs.

  7. Gd-Tex Pharmacyclics Inc.

    PubMed

    Radford, I R

    2000-12-01

    Pharmacyclics is developing Gd-Tex (gadolinium texaphyrin) as a radiosensitizer for the potential treatment of various cancers including brain metastases and primary brain tumors, pancreatic tumors, lung tumors and pediatric cancers [196711], [348919]. The compound entered phase III pivotal trials for brain metastases in September 1998 [323929]. Phase I clinical trials for the treatment of primary brain tumors and pancreatic cancer have been initiated while several trials in other cancer types are in the planning stages [367716]. In September 1998, Pharmacyclics announced the initiation of a pivotal phase III trial for the treatment of patients with brain metastases. This multicenter trial originally included 30 sites in the US, Canada and Europe, and was expected to enroll 425 patients. The FDA agreed that this trial qualified for Fast Track review if efficacy end-points are met [301265]. By October 2000, nearly all 450 patients in 50 sites had been completed [375959], [387023]. In September 2000, Pharmacyclics and the National Cancer Institute (NCI) initiated two phase I trials of Gd-Tex. The first was to determine the safety of two different dosing regimens of the drug during preoperative radiotherapy after induction chemotherapy in patients with stage IIA non-small cell lung cancer (NSCLC). The second would examine the use of Gd-Tex in combination with stereotactic Gamma Knife radiosurgery in patients with primary brain tumors known as glioblastoma multiforme [381561]. A phase Ib/II trial, for brain metastases, was conducted in America and France, and involved over 100 patients. At the ASCO 1998 meeting, interim tumor response data were presented for 37 patients. The overall tumor response rate (complete plus partial response rate) was 73%. Furthermore, MRI scanning confirmed that Gd-Tex accumulated selectively in tumors [287459]. Full results were announced in October 1998 at the American Society of Therapeutic Radiology and Oncology. Following ten daily

  8. Inkjet-based adaptive planarization (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Singhal, Shrawan; Grigas, Michelle M.; Khusnatdinov, Niyaz; Sreenivasan, Srinivasan V.

    2017-03-01

    achieved by this technique is limited. Also, planarization over a large isolated topographical feature has been studied for the reverse-tone Jet-and-Flash Imprint Lithography process, also known as JFIL-R [4]. This relies on surface tension and capillary effects to smoothen a spin-coated Si containing film that can be etched to obtain a smooth profile. To meet the stringent requirement of planarity in submicron device technologies Chemical Mechanical Planarization (CMP) is the most widely used planarization technology [5], [6]. It uses a combination of abrasive laden chemical slurry and a mechanical pad for achieving planar profiles. The biggest concern with CMP is the dependence of material removal rate on the pattern density of material, leading to the formation of a step between the high density and low-density. The step shows up as a long-range thickness variation in the planarized film, similar in scale to pre-existing substrate topography that should have been polished away. Preventive techniques like dummy fill and patterned resist can be used to reduce the variation in pattern density. These techniques increase the complexity of the planarization process and significantly limit the device design flexibility. Contact Planarization (CP) has also been reported as an alternative to the CMP processing [7], [8]. A substrate is spin coated with a photo curable material and pre baked to remove residual solvent. An ultra-flat surface or an optical flat is pressed on the spin-coated wafer. The material is forced to reflow. Pressure is used to spread out material evenly and achieve global planarization. The substrate is then exposed to UV radiation to harden the photo curable material. Although attractive, this process is not adaptive as it does not account for differences in surface topography of the wafer and the optical flat, nor can it address all the parasitics that arise during the process itself. The optical flat leads to undesirable planarization of even the substrate

  9. Complex Planar Splines.

    DTIC Science & Technology

    1981-05-01

    try todefine a complex planar spline by holomorphic elements like polynomials, then by the well known identity theorem (e.g. Diederich- Remmert [9, p...R. Remmert : Funktionentheorie I, Springer, Berlin, Heidelberg, New York, 1972, 246 p. 10 0. Lehto - K.I. Virtanen: Quasikonforme AbbildunQen, Springer

  10. Comparison of GD2 Binding Capture ELISA Assays for Anti-GD2-Antibodies Using GD2-Coated Plates and a GD2-Expressing Cell-Based ELISA

    PubMed Central

    Soman, Gopalan; Yang, Xiaoyi; Jiang, Hengguang; Giardina, Steve; Mitra, Gautam

    2011-01-01

    Two assay methods for quantification of the disialoganglioside (GD2)-specific binding activities of anti-GD2 monoclonal antibodies and antibody immunofusion proteins, such as ch14.18 and hu14.18-IL2, were developed. The methods differed in the use of either microtiter plates coated with purified GD2 or plates seeded with GD2-expressing cell lines to bind the anti-GD2 molecules. The bound antibodies were subsequently detected using the reactivity of the antibodies to an HRP-labeled anti-IgG Fc or antibodies recognizing the conjugate IL-2 part of the Hu 14.18IL-2 fusion protein. The bound HRP was detected using reagents such as orthophenylene diamine, 2, 2’-azinobis [3-ethylbenzothiazoline-6-sulfonic acid] or tetramethylbenzidine. The capture ELISA using GD2-coated plates was developed earlier in assay development and used to demonstrate assay specificity and to compare lot-to-lot consistency and stability of ch14.18, and Hu14.18 IL-2 in clinical development. During this study, we found a number of issues related to plate-to-plate variability, GD2 lot variability, and variations due to GD2 storage stability, etc., that frequently lead to assay failure in plates coated with purified GD2. The cell-based ELISA (CbELISA) using the GD2 expressing melanoma cell line, M21/P6, was developed as an alternative to the GD2-coated plate ELISA. The results on the comparability of the capture ELISA on GD2-coated plates and the cell-based assay show that both assays give comparable results. However, the cell-based assay is more consistent and reproducible. Subsequently, the anti-GD2 capture ELISA using the GD2-coated plate was replaced with the CbELISA for product lot release testing and stability assessment. PMID:21893062

  11. Enjoyment of Euclidean Planar Triangles

    ERIC Educational Resources Information Center

    Srinivasan, V. K.

    2013-01-01

    This article adopts the following classification for a Euclidean planar [triangle]ABC, purely based on angles alone. A Euclidean planar triangle is said to be acute angled if all the three angles of the Euclidean planar [triangle]ABC are acute angles. It is said to be right angled at a specific vertex, say B, if the angle ?ABC is a right angle…

  12. Ganglioside GD3 Enhances Invasiveness of Gliomas by Forming a Complex with Platelet-derived Growth Factor Receptor α and Yes Kinase.

    PubMed

    Ohkawa, Yuki; Momota, Hiroyuki; Kato, Akira; Hashimoto, Noboru; Tsuda, Yusuke; Kotani, Norihiro; Honke, Koichi; Suzumura, Akio; Furukawa, Keiko; Ohmi, Yuhsuke; Natsume, Atsushi; Wakabayashi, Toshihiko; Furukawa, Koichi

    2015-06-26

    There have been a few studies on the ganglioside expression in human glioma tissues. However, the role of these gangliosides such as GD3 and GD2 has not been well understood. In this study we employed a genetically engineered mouse model of glioma to clarify the functions of GD3 in gliomas. Forced expression of platelet-derived growth factor B in cultured astrocytes derived from p53-deficient mice resulted in the expression of GD3 and GD2. GD3-positive astrocytes exhibited increased cell growth and invasion activities along with elevated phosphorylation of Akt and Yes kinase. By enzyme-mediated activation of radical sources reaction and mass spectrometry, we identified PDGF receptor α (PDGFRα) as a GD3-associated molecule. GD3-positive astrocytes showed a significant amount of PDGFRα in glycolipid-enriched microdomains/rafts compared with GD3-negative cells. Src kinase family Yes was co-precipitated with PDGFRα, and its pivotal role in the increased cell invasion of GD3-positive astrocytes was demonstrated by silencing with anti-Yes siRNA. Direct association between PDGFRα and GD3 was also shown, suggesting that GD3 forms ternary complex with PDGFRα and Yes. The fact that GD3, PDGFRα, and activated Yes were colocalized in lamellipodia and the edge of tumors in cultured cells and glioma tissues, respectively, suggests that GD3 induced by platelet-derived growth factor B enhances PDGF signals in glycolipid-enriched microdomain/rafts, leading to the promotion of malignant phenotypes such as cell proliferation and invasion in gliomas.

  13. Ganglioside GD3 Enhances Invasiveness of Gliomas by Forming a Complex with Platelet-derived Growth Factor Receptor α and Yes Kinase*

    PubMed Central

    Ohkawa, Yuki; Momota, Hiroyuki; Kato, Akira; Hashimoto, Noboru; Tsuda, Yusuke; Kotani, Norihiro; Honke, Koichi; Suzumura, Akio; Furukawa, Keiko; Ohmi, Yuhsuke; Natsume, Atsushi; Wakabayashi, Toshihiko; Furukawa, Koichi

    2015-01-01

    There have been a few studies on the ganglioside expression in human glioma tissues. However, the role of these gangliosides such as GD3 and GD2 has not been well understood. In this study we employed a genetically engineered mouse model of glioma to clarify the functions of GD3 in gliomas. Forced expression of platelet-derived growth factor B in cultured astrocytes derived from p53-deficient mice resulted in the expression of GD3 and GD2. GD3-positive astrocytes exhibited increased cell growth and invasion activities along with elevated phosphorylation of Akt and Yes kinase. By enzyme-mediated activation of radical sources reaction and mass spectrometry, we identified PDGF receptor α (PDGFRα) as a GD3-associated molecule. GD3-positive astrocytes showed a significant amount of PDGFRα in glycolipid-enriched microdomains/rafts compared with GD3-negative cells. Src kinase family Yes was co-precipitated with PDGFRα, and its pivotal role in the increased cell invasion of GD3-positive astrocytes was demonstrated by silencing with anti-Yes siRNA. Direct association between PDGFRα and GD3 was also shown, suggesting that GD3 forms ternary complex with PDGFRα and Yes. The fact that GD3, PDGFRα, and activated Yes were colocalized in lamellipodia and the edge of tumors in cultured cells and glioma tissues, respectively, suggests that GD3 induced by platelet-derived growth factor B enhances PDGF signals in glycolipid-enriched microdomain/rafts, leading to the promotion of malignant phenotypes such as cell proliferation and invasion in gliomas. PMID:25940087

  14. Sol-gel derived planar waveguides for sensor applications

    NASA Astrophysics Data System (ADS)

    Karasinski, Pawel; Zielonka, Iwona

    2003-09-01

    The paper presents investigation results on the application of sol-gel technology for the production of planar waveguides. These waveguides are produced in a two-component system SiO2:TiO2. We discussed application potentials of the produced layers and presented the results of theoretical analysis involving future structures.

  15. Strain in wavy SiGe/Si superlattices

    NASA Astrophysics Data System (ADS)

    Shin, Hongkee; Lockwood, David J.; Baribeau, Jean-Marc

    2000-03-01

    Coherent wave SiGe/Si multilayer structures are of current interest for use as optical waveguide photodetectors. The structural and optical properties of such strained undulated SiGe/Si superlattices grown by molecular beam epitaxy have been studied by x-ray diffraction and Raman spectroscopy. In these superlattices, the undulated SiGe layers are self-aligned along the growth direction, and the interface undulations are very regular and predominently oriented along [100] directions. X-ray diffraction measurements exhibit features normally seen in planar superlattices and indicate that the structures have retained their strain. Grazing incidence x-ray results are consistent with a long ( 100 nm) in-plane interface correlation and a well correlated vertical alignment of the undulations over the whole superlattice depth. In the optic mode Raman spectra, there are noticeable frequency shifts between corresponding alloy modes of the wavy and similar planar superlattices. These shifts of the Si-Si, Ge-Si, and Ge-Ge mode frequncies indicate that the "average" strain in the wavy superlattice is reduced from that in the planar case, which leads to greater thermal stability. The Raman spectra of the folded acoustic modes indicate atomically abrupt interfaces in the wavy superlattices. These undulated structures show considerable promise for device use.

  16. Rubrenes: planar and twisted.

    PubMed

    Paraskar, Abhimanyu S; Reddy, A Ravikumar; Patra, Asit; Wijsboom, Yair H; Gidron, Ori; Shimon, Linda J W; Leitus, Gregory; Bendikov, Michael

    2008-01-01

    Surprisingly, despite its very high mobility in a single crystal, rubrene shows very low mobility in vacuum-sublimed or solution-processed organic thin-film transistors. We synthesized several rubrene analogues with electron-withdrawing and electron-donating substituents and found that most of the substituted rubrenes are not planar in the solid state. Moreover, we conclude (based on experimental and calculated data) that even parent rubrene is not planar in solution and in thin films. This discovery explains why high mobility is reported in rubrene single crystals, but rubrene shows very low field-effect mobility in thin films. The substituted rubrenes obtained in this work have significantly better solubility than parent rubrene and some even form films and not crystals after evaporation of the solvent. Thus, substituted rubrenes are promising materials for organic light-emitting diode (OLED) applications.

  17. Dielectric Covered Planar Antennas

    NASA Technical Reports Server (NTRS)

    Llombart Juan, Nuria (Inventor); Lee, Choonsup (Inventor); Chattopadhyay, Goutam (Inventor); Gill, John J. (Inventor); Skalare, Anders J. (Inventor); Siegel, Peter H. (Inventor)

    2014-01-01

    An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.

  18. Planar electrochemical device assembly

    DOEpatents

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2007-06-19

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  19. Planar electrochemical device assembly

    DOEpatents

    Jacobson; Craig P. , Visco; Steven J. , De Jonghe; Lutgard C.

    2010-11-09

    A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

  20. Planar plasmonic chiral nanostructures

    NASA Astrophysics Data System (ADS)

    Zu, Shuai; Bao, Yanjun; Fang, Zheyu

    2016-02-01

    A strong chiral optical response induced at a plasmonic Fano resonance in a planar Au heptamer nanostructure was experimentally and theoretically demonstrated. The scattering spectra show the characteristic narrow-band feature of Fano resonances for both left and right circular polarized lights, with a chiral response reaching 30% at the Fano resonance. Specifically, we systematically investigate the chiral response of planar heptamers with gradually changing the inter-particle rotation angles and separation distance. The chiral spectral characteristics clearly depend on the strength of Fano resonances and the associated near-field optical distributions. Finite element method simulations together with a multipole expansion method demonstrate that the enhanced chirality is caused by the excitation of magnetic quadrupolar and electric toroidal dipolar modes. Our work provides an effective method for the design of 2D nanostructures with a strong chiral response.A strong chiral optical response induced at a plasmonic Fano resonance in a planar Au heptamer nanostructure was experimentally and theoretically demonstrated. The scattering spectra show the characteristic narrow-band feature of Fano resonances for both left and right circular polarized lights, with a chiral response reaching 30% at the Fano resonance. Specifically, we systematically investigate the chiral response of planar heptamers with gradually changing the inter-particle rotation angles and separation distance. The chiral spectral characteristics clearly depend on the strength of Fano resonances and the associated near-field optical distributions. Finite element method simulations together with a multipole expansion method demonstrate that the enhanced chirality is caused by the excitation of magnetic quadrupolar and electric toroidal dipolar modes. Our work provides an effective method for the design of 2D nanostructures with a strong chiral response. Electronic supplementary information (ESI) available

  1. Planar triode pulser socket

    DOEpatents

    Booth, Rex

    1994-01-01

    A planar triode is mounted in a PC board orifice by means of a U-shaped capacitor housing and anode contact yoke removably attached to cathode leg extensions passing through and soldered to the cathode side of the PC board by means of a PC cathode pad. A pliant/flexible contact attached to the orifice make triode grid contact with a grid pad on the grid side of the PC board, permitting quick and easy replacement of bad triodes.

  2. Planar triode pulser socket

    DOEpatents

    Booth, R.

    1994-10-25

    A planar triode is mounted in a PC board orifice by means of a U-shaped capacitor housing and anode contact yoke removably attached to cathode leg extensions passing through and soldered to the cathode side of the PC board by means of a PC cathode pad. A pliant/flexible contact attached to the orifice make triode grid contact with a grid pad on the grid side of the PC board, permitting quick and easy replacement of bad triodes. 14 figs.

  3. Planar waveguide optical immunosensors

    NASA Astrophysics Data System (ADS)

    Choquette, Steven J.; Locascio-Brown, Laurie E.; Durst, Richard A.

    1991-03-01

    Monoclonal antibodies were covalently bonded to the surfaces of planar waveguides to confer immunoreacth''ity. Silver-ion diffused waveguides were used to measure theophylline concentrations in a fluorescence immunoassay and silicon nitride waveguides were used to detect theophylline in an absorbance-based immunoassay. Liposomes were employed in both assays as the optically detectable label in a competitive reaction to monitor antigen-antibody complexation. Regeneration of the active antibody site will be discussed.

  4. Biskyrmion bubble lattice in Fe/Gd alloy thin films

    NASA Astrophysics Data System (ADS)

    Lee, James; Shi, Xiaowen; Chess, Jordan; Montoya, Sergio; Mishra, Shrawan; Sakharov, Lev; Parks, Daniel; McMorran, Ben; Kevan, Steven; Fullerton, Eric; Roy, Sujoy

    2015-03-01

    Magnetic bubbles with topologically non-trivial twists, called ``skyrmion bubbles,'' exhibit particle-like properties and novel magnetic interactions with each other. They are seen in non-centrosymmetric crystals, such as MnSi, and monolayers of Fe on Ir(111) substrates. Our study considers whether skyrmion bubbles can also form in soft ferrimagnetic alloys with perpendicular anisotropy. Using resonant x-ray scattering at the Fe L3 and Gd M5 transition edges, we show that triangular lattices of skyrmion bubbles form in Fe/Gd thin films in a limited temperature and magnetic field range. Uniaxial anisotropy in the resonant scattering pattern indicates the lattice unit cell contains two skyrmions. Lorentz TEM images reveal that the repeating unit is a bound pair of bubbles called biskyrmions. Adjusting the composition of the films can shift the temperature range of the biskyrmion lattice by 100 K, allowing the lattice to form at room temperature. Fe/Gd thin films may prove a promising material for spintronics.

  5. Particle-Gamma Studies of Transitional Gd Nuclei Via Light-Ion Reactions

    NASA Astrophysics Data System (ADS)

    Hughes, R. O.; Ross, T. J.; Beausang, C. W.; Allmond, J. M.; Burke, J. T.; Phair, L.; Angell, C. T.; Basunia, M. S.; Bleuel, D. L.; Casperson, R. J.; Fallon, P.; Hatarik, R.; Munson, J.; Paschalis, S.; Petri, M.; Ressler, J. J.; Scielzo, N. D.

    2010-11-01

    Gd nuclei with N ˜ 90 are of great interest due to a rapid change from vibrational to rotational character. Numerous experiments that have studied these nuclei were limited to either pure γ-ray or pure charged-particle studies. Recently, a series of experiments have been carried out at the 88-Inch cyclotron at LBNL, which combine relatively high-efficiency γ-ray and charged-particle spectroscopy in the same experiment. A beam of 25 MeV protons was incident on enriched ^154Gd, ^155Gd, ^156Gd and ^158Gd targets. Charged particles from the (p,p'), (p,d), and (p,t) reaction channels were detected using a Si-telescope array (STARS) and the coincident gamma-rays (in ^152-158Gd) were detected using the Liberace HPGe clover array. The relatively high particle-gamma efficiency, precise energy resolution (via the γ rays), and particle-γ angular information provides a precision tool for spectroscopic studies. Preliminary results will be presented. This work was supported in part by the DOE under grant Nos. DE-FG02-05 ER41379 & DE-FG52-06 NA26206 (UR), DE-AC52 07NA27344 (LLNL), DE-AC02 05CH11231 (LBNL).

  6. Si(hhm) surfaces: Templates for developing nanostructures

    SciTech Connect

    Bozhko, S. I. Ionov, A. M.; Chaika, A. N.

    2015-06-15

    The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.

  7. Planar polarity, tissue polarity and planar morphogenesis in plants.

    PubMed

    Nakamura, Moritaka; Kiefer, Christian S; Grebe, Markus

    2012-12-01

    Plant tissues commonly undergo morphogenesis within a single tissue layer or between associated cells of the same tissue type such as vascular cells. Tissue morphogenesis may rely on an underlying tissue polarity marked by coordinated unidirectional asymmetric localisation of molecules to ends of cells. When observed in the plane of the tissue layer this is referred to as planar polarity and planar morphogenesis. However, planar morphogenesis can also involve multidirectional or differential growth of cells relying on cell-cell communication. Here, we review recent progress towards an understanding of hormonal coordination and molecular mechanisms underlying planar and tissue polarity as well as planar morphogenesis. Furthermore, we discuss the role of physical forces in planar morphogenesis and the contribution of tissue polarity to plant organ shape. Copyright © 2012 Elsevier Ltd. All rights reserved.

  8. Instantaneous planar visualization of reacting supersonic flows using silane seeding

    NASA Technical Reports Server (NTRS)

    Smith, Michael W.; Northam, G. B.

    1991-01-01

    A new visualization technique for reacting flows has been developed. This technique, which is suitable for supersonic combustion flows, has been demonstrated on a scramjet combustor model. In this application, gaseous silane (SiH4) was added to the primary hydrogen fuel. When the fuel reacted, so did the (SiH4), producing silica (SiO2) particles in situ. The particles were illuminated with a laser sheet formed from a frequency-doubled Nd:YAG laser (532 nm) beam and the Mie scattering signal was imaged. These planar images of the silica Mie scattering provided instantaneous 'maps' of combustion progress within the turbulent reacting flowfield.

  9. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

    SciTech Connect

    Cipro, R.; Gorbenko, V.; Baron, T. Martin, M.; Moeyaert, J.; David, S.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.

    2014-06-30

    Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. The InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.

  10. Isotopic labeling of milk disialogangliosides (GD3).

    PubMed

    Reis, Mariza Gomes; Bibiloni, Rodrigo; McJarrow, Paul; MacGibbon, Alastair; Fong, Bertram; Bassett, Shalome; Roy, Nicole; Dos Reis, Marlon Martins

    2016-10-01

    The most abundant ganglioside group in both human milk and bovine milk during the first postnatal week is ganglioside GD3. This group of disialogangliosides forms up to 80% of the total ganglioside content of colostrum. Although dietary gangliosides have shown biological activity such as improvement of cognitive development, gastrointestinal health, and immune function, there is still a gap in our understanding of the molecular mechanisms governing its uptake and the metabolic processes affecting its bioavailability. The use of isotopically labeled ganglioside to track the bioavailability, absorption, distribution, and metabolism of gangliosides may provide key information to bridge this gap. However, isotope labeled GD3 is not commercially available and its preparation has not been described. We report for the first time the preparation of labeled GD3 with stable isotopes. Using alkaline hydrolysis, we were able to selectively remove both acetyl groups from the tetrasaccharide portion of GD3 without promoting significant hydrolysis of the ceramide portion of the molecule to generate N-deacetyl-GD3 (Neu5α2-8Neu5-GD3). The N-deacetyl-GD3 was then chemoselectively re-acetylated in aqueous medium using deuterated acetic anhydride in the presence of Triton X 100 to produce (2)H6-GD3 {GD3[(Neu5Ac-11-(2)H3)-(Neu5Ac-11-(2)H3)]}. This method provided (2)H6-GD3 with approximately 60% yield. This compound was characterized by proton nuclear magnetic resonance ((1)H NMR) and liquid chromatography mass spectrometry (LC-MS). The oral absorption of the (2)H6-GD3 was demonstrated using a Sprague-Dawley weaning rats. Our results indicate that some ingested labeled milk gangliosides are absorbed and transported into the bloodstream without modification. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  11. Advanced Planarization Techniques

    NASA Astrophysics Data System (ADS)

    Basol, Bulent M.

    As the integrated circuit technology nodes reach 45 nm and beyondgrowing requirement for reduced propagation delay dictates inclusion of low-k materials in the interconnect metallization structures. Unfortunately, mechanical properties, such as hardness and Young's modulus of the dielectric materials, deteriorate as their porosity is increased and the k value is reduced to 2.5 and below [1]. Reliability issues such as electromigration, stress migration, and time-dependent dielectric breakdown (TDDB) lifetimes are also becoming more challenging for multi-stack low-k structures. The low-k and ultra low-k materials are prone to delamination [2] and cracking [3] during CMP; risk of damage rising as the polishing pressure and time increases [4]. It has been demonstrated that delamination in low-k stacks was driven by the work done against the friction force during the CMP process [5]. Therefore, it is becoming more and more difficult to polish and planarize topographic copper layers, deposited on low-k dielectric materials, at low stress and high rate while maintaining the mechanical integrity of the overall interconnect structure. Furthermore as feature widths and depths shrink, tolerances for metal loss and line resistance variation over the wafer surface are also reduced. In advanced interconnects, adding sacrificial thickness to the dielectric layer which can then be removed during CMP overpolish step is not a good option to minimize topography because hard cap layers are often used to protect the low-k dielectric materials from the negative effects of CMP [6, 7] and thickness of these layers is kept to a minimum to reduce their contribution to the effective dielectric constant of the stack. Therefore, as technology nodes move beyond 45 nm, planarization steps of the interconnect manufacturing process flow are expected to offer reduced stress, higher planarization efficiency, reduced copper dishing, less dielectric erosion, better global line resistance uniformity

  12. Gadolinium (Gd) Oxide, Carbide, and Carbonyl Cation Bond Energies and Evaluation of the Gd + O → GdO(+) + e(-) Chemi-Ionization Reaction Enthalpy.

    PubMed

    Demireva, Maria; Kim, JungSoo; Armentrout, P B

    2016-11-03

    Guided ion beam mass spectrometry (GIBMS) is used to measure the kinetic energy dependent product ion cross sections for reactions of the lanthanide metal gadolinium cation (Gd(+)) with O2, CO2, and CO and for reactions of GdO(+) with CO, O2, and Xe. GdO(+) is formed through barrierless and exothermic processes in the reactions of Gd(+) with O2 and CO2. All other reactions observed are endothermic, and analyses of their kinetic energy dependent cross sections yield 0 K bond dissociation energies (BDEs) for GdO(+), GdC(+), and GdCO(+). The 0 K BDE for GdO(+) is determined from five different reactions to be 7.69 ± 0.10 eV, and this value is combined with literature data to derive the ionization energy (IE) of GdO as 5.82 ± 0.16 eV. Additionally, GdC(+) and GdCO(+) BDEs of 3.18 ± 0.18 eV and 0.65 ± 0.06 eV are obtained from analysis of the Gd(+) reactions with CO and CO2, respectively. Theoretical GdO(+), GdC(+), and GdCO(+) BDEs are calculated for comparison with experiment using various Gd basis sets with an effective core potential and several levels of theory. For calculations that correctly predict a (10)D ground state for Gd(+), good agreement between theoretical and measured GdC(+) and GdCO(+) BDEs is obtained, whereas the GdO(+) BDE is underestimated in these calculations by about 0.8 eV. Additional BDEs for GdO(+) and GdC(+) are calculated using triple- and quadruple-ζ correlation consistent all-electron basis sets for Gd. Calculations with these basis sets provide better agreement with experiment for GdO(+) but not for GdC(+). The measured Gd(+) oxide, carbide, and carbonyl BDEs are similar to those for the group 3 metal ions, Sc(+) and Y(+). This is attributed to similarities in the ground state electronic configurations of these metal ions leading to similar interaction strengths. The experimental GdO(+) BDE measured here combined with the known IE of Gd is used to determine an exothermicity of 1.54 ± 0.10 eV for the Gd chemi-ionization reaction

  13. Planar oscillatory stirring apparatus

    NASA Technical Reports Server (NTRS)

    Wolf, Martin F. (Inventor)

    1987-01-01

    Apparatus (11) for applying planar oscillations to a container (13). Pressurized air (99) is supplied to a moveable slide plate (27) which employs arms (19) having an air bearing vent structure (29, 31) which allows the slide plate to float and to translate. The container (13) to be oscillated is secured to the upper surface of the slide plate (27). A motor (39) driven rotating eccentric shaft (59) loosely extends into a center hole bearing (37) of the slide plate (27) to cause the oscillations.

  14. Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

    SciTech Connect

    Sitaputra, W.; Tsu, R.

    2012-11-26

    Growth of predominantly single crystal (100)-oriented gadolinium oxide (Gd{sub 2}O{sub 3}) on a p-type Si(100) and growth of a polycrystal with a predominant Gd{sub 2}O{sub 3}(100) crystallite on a n-type Si(100) was performed using molecular beam epitaxy. Despite a poorer crystal structure than Gd{sub 2}O{sub 3}(110), an enhancement in carrier mobility can be found only from the Gd{sub 2}O{sub 3}(100)/n-type Si(100) interface. The mobility of 1715-1780 cm{sup 2}/V {center_dot} s was observed at room temperature, for carrier concentration >10{sup 20} cm{sup -3}. This accumulation of the electrons and the mobility enhancement may arise from the two-dimensional confinement due to charge transfer across the interface similar to transfer doping.

  15. Ab initio quantum chemical investigation of several isomers of anionic Si 6

    NASA Astrophysics Data System (ADS)

    Takahashi, Masae; Kawazoe, Yoshiyuki

    2006-02-01

    Eight isomers (planar hexagon, benzvalene, Dewar benzene, triangular prismane, bicyclopropenyl, octahedron, chair form, and twist boat form) of Si 6, Si62-, Si64-, and Si66-, have been searched for by the MP2 and B3LYP electronic structure calculations. Totally 14 isomers were found: two Si 6, six Si62-, five Si64-, and one Si66-. Two of them are different from the eight isomers: deformed triangle Si62-; pentagonal pyramidal Si64-. We discovered that the predicted stable shapes of Si62-, Si64-, and Si66- are octahedral, pentagonal pyramidal, and hexagonal, respectively, which agrees well with Wade rule.

  16. Expression of GD2 and GD3 gangliosides in human embryonic neural stem cells.

    PubMed

    Yanagisawa, Makoto; Yoshimura, Saori; Yu, Robert K

    2011-04-07

    NSCs (neural stem cells) are undifferentiated neural cells endowed with a high potential for proliferation and a capacity for self-renewal with retention of multipotency to differentiate into neurons and glial cells. It has been recently reported that GD3, a b-series ganglioside, is a marker molecule for identifying and isolating mouse NSCs. However, the expression of gangliosides in human NSCs is largely unknown. In the present study, we analysed the expression of gangliosides, GD2 and GD3, in human NSCs that were isolated from human brains at gestational week 17 in the form of neurospheres, which are floating clonal aggregates formed by NSCs in vitro. Employing immunocytochemistry, we found that human NSCs were strongly reactive to anti-GD2 antibody and relatively weakly reactive to anti-GD3 antibody. Treatment of these cells with an organic solvent such as 100% methanol, which selectively removes glycolipids from plasma membrane, abolished the immunoreactivity with those antibodies, indicating that the reactivity was due to GD2 and GD3, but not to GD2-/GD3-like glycoproteins or proteoglycans. The immunoreactivity of human NSCs to antibody against SSEA-1 (stage-specific embryonic antigen-1), a well-known carbohydrate antigen of NSCs, was not decreased by the treatment with 100% methanol, indicating that SSEA-1 is mainly carried by glycoproteins and/or proteoglycans in human NSCs. Our study suggests that GD2 and GD3 can be marker gangliosides for identifying human NSCs.

  17. Modeling of laser planarization of thin metal films

    SciTech Connect

    Marella, P.F.; Tuckerman, D.B.; Pease, R.F.

    1989-03-20

    The differences between excimer (approx. =30 ns pulse duration) and flashlamp-pumped dye (approx. =500 ns pulse duration) laser planarization are examined for 1.5--2 ..mu..m thick gold films over SiO/sub 2/ layers. Test structures containing bar patterns (square waves) of 5000 A peak-to-trough amplitude with spatial periods ranging from 10 to 100 ..mu..m were prepared and laser irradiated. A linear model is presented which described the time evolution of the film's surface topography when melted with a dye laser pulse. Excimer laser planarization is found to be susceptible to evaporative recoil effects which may cause undesired pattern amplification.

  18. Planar Para Algebras, Reflection Positivity

    NASA Astrophysics Data System (ADS)

    Jaffe, Arthur; Liu, Zhengwei

    2017-05-01

    We define a planar para algebra, which arises naturally from combining planar algebras with the idea of ZN para symmetry in physics. A subfactor planar para algebra is a Hilbert space representation of planar tangles with parafermionic defects that are invariant under para isotopy. For each ZN, we construct a family of subfactor planar para algebras that play the role of Temperley-Lieb-Jones planar algebras. The first example in this family is the parafermion planar para algebra (PAPPA). Based on this example, we introduce parafermion Pauli matrices, quaternion relations, and braided relations for parafermion algebras, which one can use in the study of quantum information. An important ingredient in planar para algebra theory is the string Fourier transform (SFT), which we use on the matrix algebra generated by the Pauli matrices. Two different reflections play an important role in the theory of planar para algebras. One is the adjoint operator; the other is the modular conjugation in Tomita-Takesaki theory. We use the latter one to define the double algebra and to introduce reflection positivity. We give a new and geometric proof of reflection positivity by relating the two reflections through the string Fourier transform.

  19. GD2-targeted immunotherapy and radioimmunotherapy

    PubMed Central

    Dobrenkov, Konstantin; Cheung, Nai-Kong

    2014-01-01

    Ganglioside GD2 is a tumor-associated surface antigen found in a broad spectrum of human cancers and stem cells. They include pediatric embryonal tumors (neuroblastoma, retinoblastoma, brain tumors, osteosarcoma, Ewing’s sarcoma, rhabdomyosarcoma), as well as adult cancers (small cell lung cancer, melanoma, soft tissue sarcomas). Because of its restricted normal tissue distribution, GD2 has been proven safe for antibody targeting. Anti-GD2 antibody is now incorporated into the standard of care for the treatment of high risk metastatic neuroblastoma. Building on this experience, novel combinations of antibody, cytokines, cells and genetically engineered products all directed at GD2 are rapidly moving into the clinic. In the review, past and present immunotherapy trials directed at GD2 will be summarized, highlighting the lessons learned and the future directions. PMID:25440605

  20. Preparation and characterization of [Gd(hfac)3(DTBN)(H2O)] (DTBN = di-t-butyl nitroxide). Ferromagnetic Gd(3+)-Gd3+ super-superexchange.

    PubMed

    Kanetomo, Takuya; Ishida, Takayuki

    2014-03-07

    The intramolecular radical-Gd antiferromagnetic coupling (2J1/k(B) = -11.6 K) is notably strong, as expected from our molecular design, and the intermolecular exchange coupling along the Gd-O-H···O-Gd bridges is unexpectedly ferromagnetic with the largest Gd···Gd coupling ever known (2J2/k(B) = +0.12 K).

  1. Dielectric properties of colloidal Gd2O3 nanocrystal films fabricated via electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Mahajan, S. V.; Dickerson, J. H.

    2010-03-01

    We investigated the dielectric characteristics of [Al/Gd2O3/Si] metal-oxide-semiconductor (MOS) capacitors, which were fabricated from films of gadolinium oxide (Gd2O3) nanocrystals used as the gate oxide layer. Electrophoretic deposition cast Gd2O3 nanocrystal films of different thicknesses by varying the concentration of the nanocrystal suspensions. Capacitance-voltage (C-V) measurements of the MOS capacitors exhibited hysteresis, which indicated potentially favorable charge-storage properties. The films' dielectric constant (κ =3.90), calculated from the C-V data, led to the packing density of nanocrystals within the film (66%), which is in the glassy regime approximated by randomly closed packed spheres.

  2. Improving dielectric properties of epitaxial Gd{sub 2}O{sub 3} thin films on silicon by nitrogen doping

    SciTech Connect

    Roy Chaudhuri, Ayan; Osten, H. J.; Fissel, A.; Archakam, V. R.

    2013-01-14

    We report about the effect of nitrogen doping on the electrical properties of epitaxial Gd{sub 2}O{sub 3} thin films. Epitaxial Gd{sub 2}O{sub 3}:N thin films were grown on Si (111) substrates by solid source molecular beam epitaxy using nitrous oxide as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy analysis. Substantial reduction of the leakage current density and disappearance of hysteresis in capacitance-voltage characteristics observed in the Gd{sub 2}O{sub 3}:N layers indicate that nitrogen incorporation in Gd{sub 2}O{sub 3} effectively eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer.

  3. Oncotargets GD2 and GD3 are highly expressed in sarcomas of children, adolescents, and young adults.

    PubMed

    Dobrenkov, Konstantin; Ostrovnaya, Irina; Gu, Jessie; Cheung, Irene Y; Cheung, Nai-Kong V

    2016-10-01

    GD2 and GD3 are the tumor-associated glycolipid antigens found in a broad spectrum of human cancers. GD2-specific antibody is currently a standard of care for high-risk neuroblastoma therapy. In this study, the pattern of GD2 and GD3 expression among pediatric/adolescent or young adult tumors was determined, providing companion diagnostics for targeted therapy. Ninety-two specimens of human osteosarcoma (OS), rhabdomyosarcoma (RMS), Ewing family of tumors, desmoplastic small round cell tumor (DSRCT), and melanoma were analyzed for GD2/GD3 expression by immunohistochemistry. Murine monoclonal antibody 3F8 was used for GD2 staining, and R24 for GD3. Staining was scored according to both intensity and percentage of positive tumor cells from 0 to 4. Both gangliosides were highly prevalent in OS and melanoma. Among other tumors, GD3 expression was higher than GD2 expression. Most OS samples demonstrated strong staining for GD2 and GD3, whereas expression for other tumors was highly variable. Mean intensity of GD2 expression was significantly more heterogeneous (P < 0.001) when compared to GD3 across tumor types. When assessing the difference between GD2 and GD3 expression in all tumor types combined, GD3 expression had a significantly higher score (P = 0.049). When analyzed within each cancer, GD3 expression was significantly higher only in DSRCT (P = 0.002). There was no statistical difference in either GD2 or GD3 expression between primary and recurrent sarcomas. GD2/GD3 expression among pediatric solid tumors is common, albeit with variable level of expression. Especially for patients with sarcoma, these gangliosides can be potential targets for antibody-based therapies. © 2016 Wiley Periodicals, Inc.

  4. Registration of heavy metal ions and pesticides with ATR planar waveguide enzyme sensors

    NASA Astrophysics Data System (ADS)

    Nabok, Alexei; Haron, Saharudin; Ray, Asim

    2004-11-01

    The proposed novel type of enzyme optical sensors is based on a combination of SiO2/Si3N4/SiO2 planar waveguide ATR (attenuated total reflection) transducer, fabricated by standard silicon planar technology, with the composite polyelectrolyte self-assembled coating containing both organic chromophores and enzyme molecules. Such devices were deployed to monitor typical industrial and agricultural water pollutants, such as heavy metal ions and pesticides, acting as inhibitors of enzyme reactions. The sensitivity of registration of these pollutants in the range of 1 ppb was achieved. The use of different enzymes in the sensitive membrane provides a background for pattern recognition of the above pollutants.

  5. Planarization of a surface of nanoporous silica-titania composition by atomic-molecular chemical assembly

    NASA Astrophysics Data System (ADS)

    Luchinin, V. V.; Panov, M. F.; Romanov, A. A.

    2017-05-01

    The processes involved in the planarization of the surface of nanoporous SiO2 by the atomicmolecular deposition of nanoscale TiO2 films were studied in regimes with different degrees of penetration of TiO2 into SiO2 nanopores. The technological process parameters that correspond to different regimes of surface planarization were examined. The degree of penetration of TiO2 into SiO2 nanopores was monitored using reflection ellipsometry by measuring the depth distribution of the refraction index within the two-layer model.

  6. Electrochemical planarization for multilevel metallization

    SciTech Connect

    Contolini, R.J.; Bernhardt, A.F.; Mayer, S.T. )

    1994-09-01

    The authors describe an electrochemical planarization technology involving electroplating followed by electropolishing, resulting in a very flat surface containing embedded conductors. Electrochemical planarization technology has been used to produce silicon substrate multichip modules. Both the electroplating and electropolishing processes have a thickness uniformity of better than [+-] 2% ([+-]3[sigma]) across a 100 mm wafer.

  7. Planar oscillatory stirring apparatus

    NASA Astrophysics Data System (ADS)

    Wolf, M. F.

    1985-08-01

    The present invention is directed to an apparatus for stirring materials using planar orthogonal axes oscillations. The apparatus has a movable slide plate sandwiched between two fixed parallel support plates. Pressurized air is supplied to the movable slide plate which employs a tri-arm air bearing vent structure which allows the slide plate to float and to translate between the parallel support plates. The container having a material to be stirred is secured to the upper surface of the slide plate through an aperture in the upper support plate. A motor driven eccentric shaft loosely extends into a center hole bearing of the slide plate to cause the horizontal oscillations. Novelty lies in the combination of elements which exploits the discovery that low frequency, orthogonal oscillations applied horizontally to a Bridgman crucible provides a very rigorous stirring action, comparable with and more effective by an order of magnitude than the accelerated crucible rotation technique.

  8. Planar elliptic growth

    SciTech Connect

    Mineev, Mark

    2008-01-01

    The planar elliptic extension of the Laplacian growth is, after a proper parametrization, given in a form of a solution to the equation for areapreserving diffeomorphisms. The infinite set of conservation laws associated with such elliptic growth is interpreted in terms of potential theory, and the relations between two major forms of the elliptic growth are analyzed. The constants of integration for closed form solutions are identified as the singularities of the Schwarz function, which are located both inside and outside the moving contour. Well-posedness of the recovery of the elliptic operator governing the process from the continuum of interfaces parametrized by time is addressed and two examples of exact solutions of elliptic growth are presented.

  9. Structural and magnetic properties of the Gd-based bulk metallic glasses GdFe2, GdCo2, and GdNi2 from first principles

    NASA Astrophysics Data System (ADS)

    Lizárraga, Raquel

    2016-11-01

    A structural and magnetic characterization of Gd-based bulk metallic glasses, GdFe2, GdCo2, and GdNi2, was performed. Models for the amorphous structures for two magnetic configurations, ferromagnetic and ferrimagnetic, were obtained by means of a first-principles-based method, the stochastic quenching. In all three cases, the ferrimagnetic configuration was energetically more stable than the ferromagnetic one, in perfect agreement with experiments. In the structural analysis, radial and angle distribution functions as well as calculations of bond lengths and average coordination numbers were included. Structural properties are in good agreement with experiments and do not depend on the magnetic configuration. The distribution of magnetic moments shows that amorphous GdFe2 and GdCo2 are both ferrimagnets, with antiparallel alignment of the magnetic moments of the two magnetic sublattices, whereas Ni nearly loses its magnetic moment in amorphous GdNi2, similar to the situation in its crystalline counterpart.

  10. Study of ^155Gd by the (p,dγ) Reaction

    NASA Astrophysics Data System (ADS)

    Allmond, J. M.; Beausang, C. W.; Ross, T. J.; Darakchieva, B. K.

    2009-05-01

    The structure of the N=90 and neighboring nuclei have been of recent interest due to an unusual number of low-lying 0^+ states and a rapid change from vibrational to rotational character. The single, unpaired neutron in ^155Gd (N=91) acts as a probe to the ^154Gd (N=90) core. To study this, an experiment was conducted at the 88-Inch Cyclotron at LBNL using the STARS and LiBerACE detector arrays. A 25 MeV proton beam incident onto a ^156Gd target was used to populate states in ^155Gd by the (p,dγ) reaction. The exit channel of the reaction and the residual excitation energy of the nucleus were tagged by detecting scattered charged particles in a Si telescope array (STARS) while coincident gamma rays were detected using 6 Ge clovers and 1 Ge LEPS detector of the LiBerACE array. Particle-γ and particle-γ-γ correlations are used to probe the structure of ^155Gd. Preliminary results are presented.

  11. Colloid aspects of chemical-mechanical planarization.

    PubMed

    Matijević, E; Babu, S V

    2008-04-01

    The essential parts of interconnects for silicon based logic and memory devices consist of metal wiring (e.g. copper), a barrier metal (Ta, TaN), and of insulation (SiO2, low-k polymer). The deposition of the conducting metal cannot be confined to trenches, resulting in additional coverage of Cu and Ta/TaN on the surface of the dielectrics, yielding an electrically conducting continuous but an uneven surface. The surplus metal must be removed until a perfectly flat surface consisting of electrically isolated metal lines is achieved with no imperfections. This task is accomplished by the chemical-mechanical planarization (CMP) process, in which the wafer is polished with a slurry containing abrasives of finely dispersed particles in submicrometer to nanometer size. The slurries also contain dissolved chemicals to modify the surfaces to be planarized. Eventually the final product must be cleared of any adhered particles and debris left after polishing is completed. Obviously the entire process deals with materials and interactions which are the focal subjects of colloid and surface science, such as the natures of abrasive particles and their stability in the slurry, the properties of various surfaces and their modifications, adhesion and detachment of the particles and different methods for the characterization of constituents, as well as elucidation of the relevant interfacial phenomena. This review endeavors to describe the colloid approach to optimize the materials and processes in order to achieve desirable polish rates and final surfaces with no imperfections. Specifically, the effects of the composition, size, shape, and charge of abrasive particles on the polish process and the quality of planarized wafers is described in detail. Furthermore, the interactions of metal surfaces with oxidizing, chelating, and other species which affect the dissolution and surface modification of metal (copper) surfaces are illustrated and related to the planarization process

  12. pH-Dependent biodegradable silica nanotubes derived from Gd(OH)3 nanorods and their potential for oral drug delivery and MR imaging.

    PubMed

    Hu, Kuo-Wei; Hsu, Kang-Che; Yeh, Chen-Sheng

    2010-09-01

    We report a pH dependence of degradable silica nanotubes, which dissolved to the biodegradation product monosilicic acid, Si(OH)(4). The silica nanotubes, potentially acting as oral-based administration carriers, were resistant to dissolution in the extreme acidic condition of pH 1, but degraded quickly at pH 8, and the degradation rate can be tuned by tailoring the thickness of silica nanotubes with thicker nanotubes dissolving more slowly. Because Gd(OH)(3) nanorods were used as templates, the silica nanotubes could be further developed as MR imaging contrast agents as well as drugs carriers. The released Gd(3+) ions resulting from the etching of Gd(OH)(3) nanorods were chelated by the pre-modified DOTA, yielding Gd-DOTA complexes grafted onto silica nanotubes. The Gd-DOTA grafted silica nanotubes loaded with doxorubicin revealed enhanced T(1) imaging contrast and anticancer activity.

  13. Time domain simulation of Gd3+-Gd3+ distance measurements by EPR

    NASA Astrophysics Data System (ADS)

    Manukovsky, Nurit; Feintuch, Akiva; Kuprov, Ilya; Goldfarb, Daniella

    2017-07-01

    Gd3+-based spin labels are useful as an alternative to nitroxides for intramolecular distance measurements at high fields in biological systems. However, double electron-electron resonance (DEER) measurements using model Gd3+ complexes featured a low modulation depth and an unexpected broadening of the distance distribution for short Gd3+-Gd3+ distances, when analysed using the software designed for S = 1/2 pairs. It appears that these effects result from the different spectroscopic characteristics of Gd3+—the high spin, the zero field splitting (ZFS), and the flip-flop terms in the dipolar Hamiltonian that are often ignored for spin-1/2 systems. An understanding of the factors affecting the modulation frequency and amplitude is essential for the correct analysis of Gd3+-Gd3+ DEER data and for the educated choice of experimental settings, such as Gd3+ spin label type and the pulse parameters. This work uses time-domain simulations of Gd3+-Gd3+ DEER by explicit density matrix propagation to elucidate the factors shaping Gd3+ DEER traces. The simulations show that mixing between the |+½, -½> and |-½, +½> states of the two spins, caused by the flip-flop term in the dipolar Hamiltonian, leads to dampening of the dipolar modulation. This effect may be mitigated by a large ZFS or by pulse frequency settings allowing for a decreased contribution of the central transition and the one adjacent to it. The simulations reproduce both the experimental line shapes of the Fourier-transforms of the DEER time domain traces and the trends in the behaviour of the modulation depth, thus enabling a more systematic design and analysis of Gd3+ DEER experiments.

  14. Magnetocaloric effect in Gd-based ferromagnet GdZn2

    NASA Astrophysics Data System (ADS)

    Matsumoto, Keisuke T.; Hiraoka, Koichi

    2017-02-01

    Magnetic properties and magnetocaloric effect of the Gd-based compound GdZn2 have been investigated. GdZn2 shows a ferromagnetic transition at TC = 85 K and spin-reorientation transition at TSR = 58 K. The maximum entropy change and relative cooling power (RCP) are estimated to be 11.5 J/K kg and 690 J/kg, respectively, for a magnetic field change of 7 T. The large value of RCP is suggested that GdZn2 is an attractive candidate for a low-temperature magnetic refrigerant.

  15. Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111)

    NASA Astrophysics Data System (ADS)

    Sim, Hyunjun; Samantaray, Chandan B.; Lee, Taeho; Yeom, Hanwoong; Hwang, Hyunsang

    2004-12-01

    In this study, the electrical and structural characteristics of Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer grown on Si(111) were investigated. Compared with control Gd2O3 gate dielectrics deposited on HF-last treated Si (111), the Gd2O3 gate dielectrics with an epitaxial Si3N4 interfacial layer exhibited excellent electrical characteristics such as low leakage current density and low interface state density. These characteristics are due to a high-quality interfacial layer formation on Si. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy were employed to analyze the structures of the gate dielectrics and interfacial layer. High-k gate dielectrics with an epitaxial Si3N4 interfacial layer have considerable potential for future use in sub-0.1 μm metal oxide semiconductor field-effect transistors (MOSFETs).

  16. Non-planar chemical preconcentrator

    DOEpatents

    Manginell, Ronald P.; Adkins, Douglas R.; Sokolowski, Sara S.; Lewis, Patrick R.

    2006-10-10

    A non-planar chemical preconcentrator comprises a high-surface area, low mass, three-dimensional, flow-through sorption support structure that can be coated or packed with a sorptive material. The sorptive material can collect and concentrate a chemical analyte from a fluid stream and rapidly release it as a very narrow temporal plug for improved separations in a microanalytical system. The non-planar chemical preconcentrator retains most of the thermal and fabrication benefits of a planar preconcentrator, but has improved ruggedness and uptake, while reducing sorptive coating concerns and extending the range of collectible analytes.

  17. Contact planarization of ensemble nanowires.

    PubMed

    Chia, A C E; LaPierre, R R

    2011-06-17

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  18. Planar bilayer lipid memebranes

    NASA Astrophysics Data System (ADS)

    Tien, H. Ti

    The planar bilayer lipid membrane, also known as lipid bilayer membrane, black lipid membrane or simply BLM(s), for short, has been investigated since its inception in 1960, the details of which have been described in a monograph published in 1974. This review is a report on the advances in the BLM research since that time. After a brief introduction, the first five sections consider various aspects of experimental methods, optical properties, thermodynamics of lipid bilayers, permeability, and electrical properties of BLMs. Section 7 deals with the use of BLM as energy transducer, particularly the transduction of light into electrical energy. Section 8, the longest portion of the paper, is devoted to modelling of biomembranes, such as the plasma membrane of cells, the thylakoid membrane of chloroplasts, the cristae membrane of mitochondria, the visual receptor membrane of the eye, and the nerve membrane. The concluding section points out that studies of BLMs facilitate the initial testing of working hypothses and may lead to a better choice of appropriate in vivo and reconstituted membrane experiments.

  19. Anti-GD2 immunotherapy for neuroblastoma.

    PubMed

    Sait, Sameer; Modak, Shakeel

    2017-10-01

    Current therapeutic approaches for high-risk neuroblastoma (HR-NB) include high-dose chemotherapy, surgery and radiotherapy; interventions that are associated with long and short-term toxicities. Effective immunotherapy holds particular promise for improving survival and quality of life by reducing exposure to cytotoxic agents. GD2, a surface glycolipid is the most common target for immunotherapy. Areas covered: We review the status of anti-GD2 immunotherapies currently in clinical use for neuroblastomas and novel GD2-targeted strategies in preclinical development. Expert commentary: Anti-GD2 monoclonal antibodies are associated with improved survival in patients in their first remission and are increasingly being used for chemorefractory and relapsed neuroblastoma. As protein engineering technology has become more accessible, newer antibody constructs are being tested. GD2 is also being targeted by natural killer cells and T-cells. Active immunity can be elicited by anti-GD2 vaccines. The rational combination of currently available and soon-to-emerge immunotherapeutic approaches, and their integration into conventional multimodality therapies will require further investigation to optimize their use for HR-NB.

  20. Stability of magic planar Ag clusters

    NASA Astrophysics Data System (ADS)

    Chiu, Y. P.; Ou, Y. S.; Chang, Y. R.; Wei, C. M.; Chang, C. S.; Tsong, Tien T.

    2007-03-01

    The spontaneous assembly of atoms and molecules in a system has attracted many research interests and created numerous potential applications. Utilizing the periodic pattern found on the Pb quantum islands, which are grown on the Si(111) surface, we have recently discovered that self-organized Ag planar clusters formed on these templates exhibit enhanced stability at some particular sizes [1]. Existence of the magic atom numbers in these clusters is mainly attributed to the electronic confinement effect. Here, we further explore the strength of these magic clusters subject to the temperature rise and oxygen exposure. Detailed calculations based on ab initio density functional theory have also been performed. The results help establish the relation between the physical and chemical stability of a magic Ag cluster and its size and shape. Ref:[1] Ya-Ping Chiu, Li-Wei Huang, Ching-Ming Wei, Chia-Seng Chang, and Tien-Tzou Tsong, Phys. Rev. Lett. 97, 165504 (2006).

  1. Planar Chiral, Ferrocene-Stabilized Silicon Cations.

    PubMed

    Schmidt, Ruth K; Klare, Hendrik F T; Fröhlich, Roland; Oestreich, Martin

    2016-04-04

    The preparation of a series of planar chiral, ferrocenyl-substituted hydrosilanes as precursors of ferrocene-stabilized silicon cations is described. These molecules also feature stereogenicity at the silicon atom. The generation and (29)Si NMR spectroscopic characterization of the corresponding silicon cations is reported, and problems arising from interactions of the electron-deficient silicon atom and adjacent C(sp(3))-H bonds or aromatic π donors are discussed. These issues are overcome by tethering another substituent at the silicon atom to the ferrocene backbone. The resulting annulation also imparts conformational rigidity and steric hindrance in such a way that the central chirality at the silicon atom is set with complete diastereocontrol. These chiral Lewis acid catalysts were then tested in difficult Diels-Alder reactions, but no enantioinduction was seen.

  2. Object Classification via Planar Abstraction

    NASA Astrophysics Data System (ADS)

    Oesau, Sven; Lafarge, Florent; Alliez, Pierre

    2016-06-01

    We present a supervised machine learning approach for classification of objects from sampled point data. The main idea consists in first abstracting the input object into planar parts at several scales, then discriminate between the different classes of objects solely through features derived from these planar shapes. Abstracting into planar shapes provides a means to both reduce the computational complexity and improve robustness to defects inherent to the acquisition process. Measuring statistical properties and relationships between planar shapes offers invariance to scale and orientation. A random forest is then used for solving the multiclass classification problem. We demonstrate the potential of our approach on a set of indoor objects from the Princeton shape benchmark and on objects acquired from indoor scenes and compare the performance of our method with other point-based shape descriptors.

  3. Process for forming planarized films

    DOEpatents

    Pang, Stella W.; Horn, Mark W.

    1991-01-01

    A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.

  4. Flat panel planar optic display

    SciTech Connect

    Veligdan, J.T.

    1994-11-01

    A prototype 10 inch flat panel Planar Optic Display, (POD), screen has been constructed and tested. This display screen is comprised of hundreds of planar optic class sheets bonded together with a cladding layer between each sheet where each glass sheet represents a vertical line of resolution. The display is 9 inches wide by 5 inches high and approximately 1 inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  5. Planarization of amorphous carbon films on patterned substrates using gas cluster ion beams

    SciTech Connect

    Toyoda, Noriaki; Yamada, Isao; Nagato, Keisuke; Nakao, Masayuki; Hamaguchi, Tetsuya; Tani, Hiroshi; Sakane, Yasuo

    2009-04-01

    Surface planarization and modification of a patterned surface were demonstrated using gas cluster ion beam (GCIB). Grooves with 100-400 nm intervals were formed on amorphous carbon films using focused ion beams to study the special frequency dependence of the planarization. Also, line and space patterns were fabricated on Si substrates, and amorphous carbons were deposited as a model structure of discrete track media. Subsequently, surface planarization using Ar-GCIB was carried out. After GCIB irradiations, all of the grooves were completely removed, and a flat surface was realized. And it showed that GCIB irradiation planarized grooves without huge thickness loss. From the power spectrum density of an atomic force microscope, GCIB preferentially removed grooves with small intervals. It was found from energy dispersive x-ray spectroscopy that surface planarization without severe damage in the amorphous carbon and magnetic layers was carried out with GCIB.

  6. Glycolipid GD3 and GD3 synthase are key drivers for glioblastoma stem cells and tumorigenicity

    PubMed Central

    Yeh, Shih-Chi; Wang, Pao-Yuan; Lou, Yi-Wei; Khoo, Kay-Hooi; Hsiao, Michael; Hsu, Tsui-Ling; Wong, Chi-Huey

    2016-01-01

    The cancer stem cells (CSCs) of glioblastoma multiforme (GBM), a grade IV astrocytoma, have been enriched by the expressed marker CD133. However, recent studies have shown that CD133− cells also possess tumor-initiating potential. By analysis of gangliosides on various cells, we show that ganglioside D3 (GD3) is overexpressed on eight neurospheres and tumor cells; in combination with CD133, the sorted cells exhibit a higher expression of stemness genes and self-renewal potential; and as few as six cells will form neurospheres and 20–30 cells will grow tumor in mice. Furthermore, GD3 synthase (GD3S) is increased in neurospheres and human GBM tissues, but not in normal brain tissues, and suppression of GD3S results in decreased GBM stem cell (GSC)-associated properties. In addition, a GD3 antibody is shown to induce complement-dependent cytotoxicity against cells expressing GD3 and inhibition of GBM tumor growth in vivo. Our results demonstrate that GD3 and GD3S are highly expressed in GSCs, play a key role in glioblastoma tumorigenicity, and are potential therapeutic targets against GBM. PMID:27143722

  7. Glycolipid GD3 and GD3 synthase are key drivers for glioblastoma stem cells and tumorigenicity.

    PubMed

    Yeh, Shih-Chi; Wang, Pao-Yuan; Lou, Yi-Wei; Khoo, Kay-Hooi; Hsiao, Michael; Hsu, Tsui-Ling; Wong, Chi-Huey

    2016-05-17

    The cancer stem cells (CSCs) of glioblastoma multiforme (GBM), a grade IV astrocytoma, have been enriched by the expressed marker CD133. However, recent studies have shown that CD133(-) cells also possess tumor-initiating potential. By analysis of gangliosides on various cells, we show that ganglioside D3 (GD3) is overexpressed on eight neurospheres and tumor cells; in combination with CD133, the sorted cells exhibit a higher expression of stemness genes and self-renewal potential; and as few as six cells will form neurospheres and 20-30 cells will grow tumor in mice. Furthermore, GD3 synthase (GD3S) is increased in neurospheres and human GBM tissues, but not in normal brain tissues, and suppression of GD3S results in decreased GBM stem cell (GSC)-associated properties. In addition, a GD3 antibody is shown to induce complement-dependent cytotoxicity against cells expressing GD3 and inhibition of GBM tumor growth in vivo. Our results demonstrate that GD3 and GD3S are highly expressed in GSCs, play a key role in glioblastoma tumorigenicity, and are potential therapeutic targets against GBM.

  8. Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

    NASA Astrophysics Data System (ADS)

    Banu, Nasrin; Satpati, Biswarup; Bhukta, Anjan; Dev, B. N.

    2017-01-01

    Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (˜5 nm)/Ni(˜15 nm)/Si, grown in an ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence, ion beam mixing occurs and more and more Si is incorporated into the Ni layer, and this layer gets amorphized. At an even higher fluence, a recrystallized uniform nickel monosilicide (η-NiSi) layer is formed. Several planar spacings of different Miller indices of η-NiSi have been observed in XRD and TEM. Additionally, an interesting amorphization and recrystallization behavior has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. This kind of amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On a further increase in irradiation fluence, the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized, as well as amorphous Si, shows an oscillatory behavior as a function of ion fluence.

  9. Reinvestigation of the Cd-Gd phase diagram.

    PubMed

    Reichmann, Thomas L; Ipser, Herbert

    2014-12-25

    The complete Cd-Gd equilibrium phase diagram was investigated by a combination of powder-XRD, SEM and DTA. All previously reported phases, i.e., CdGd, Cd2Gd, Cd3Gd, Cd45Gd11, Cd58Gd13, and Cd6Gd, could be confirmed. In addition, a new intermetallic compound with a stoichiometric composition corresponding to "Cd8Gd" was found to exist. It was obtained that "Cd8Gd" decomposes peritectically at 465 °C. Homogeneity ranges of all intermetallic compounds were determined at distinct temperatures. In addition, the maximum solubilities of Cd in the low- and high-temperature modifications of Gd were determined precisely as 4.6 and 22.6 at.%, respectively. All invariant reaction temperatures (with the exception of the formation of Cd58Gd13) as well as liquidus temperatures were determined, most probably, Cd58Gd13 is formed in a peritectoid reaction from Cd45Gd11 and Cd6Gd at a temperature below 700 °C.

  10. Self-patterning Gd nano-fibers in Mg-Gd alloys

    SciTech Connect

    Li, Yangxin; Wang, Jian; Chen, Kaiguo; Shao, Meiyue; Shen, Yao; Jin, Li; Zhu, Guo-zhen

    2016-12-07

    Manipulating the shape and distribution of strengthening units, e.g. particles, fibers, and precipitates, in a bulk metal, has been a widely applied strategy of tailoring their mechanical properties. Here, we report self-assembled patterns of Gd nano-fibers in Mg-Gd alloys for the purpose of improving their strength and deformability. 1-nm Gd nano-fibers, with a $\\langle$c$\\rangle$ -rod shape, are formed and hexagonally patterned in association with Gd segregations along dislocations that nucleated during hot extrusion. Such Gd-fiber patterns are able to regulate the relative activities of slips and twinning, as a result, overcome the inherent limitations in strength and ductility of Mg alloys. Finally, this nano-fiber patterning approach could be an effective method to engineer hexagonal metals.

  11. Self-patterning Gd nano-fibers in Mg-Gd alloys

    PubMed Central

    Li, Yangxin; Wang, Jian; Chen, Kaiguo; Shao, Meiyue; Shen, Yao; Jin, Li; Zhu, Guo-zhen

    2016-01-01

    Manipulating the shape and distribution of strengthening units, e.g. particles, fibers, and precipitates, in a bulk metal, has been a widely applied strategy of tailoring their mechanical properties. Here, we report self-assembled patterns of Gd nano-fibers in Mg-Gd alloys for the purpose of improving their strength and deformability. 1-nm Gd nano-fibers, with a 〈c〉-rod shape, are formed and hexagonally patterned in association with Gd segregations along dislocations that nucleated during hot extrusion. Such Gd-fiber patterns are able to regulate the relative activities of slips and twinning, as a result, overcome the inherent limitations in strength and ductility of Mg alloys. This nano-fiber patterning approach could be an effective method to engineer hexagonal metals. PMID:27924848

  12. Self-patterning Gd nano-fibers in Mg-Gd alloys

    DOE PAGES

    Li, Yangxin; Wang, Jian; Chen, Kaiguo; ...

    2016-12-07

    Manipulating the shape and distribution of strengthening units, e.g. particles, fibers, and precipitates, in a bulk metal, has been a widely applied strategy of tailoring their mechanical properties. Here, we report self-assembled patterns of Gd nano-fibers in Mg-Gd alloys for the purpose of improving their strength and deformability. 1-nm Gd nano-fibers, with amore » $$\\langle$$c$$\\rangle$$ -rod shape, are formed and hexagonally patterned in association with Gd segregations along dislocations that nucleated during hot extrusion. Such Gd-fiber patterns are able to regulate the relative activities of slips and twinning, as a result, overcome the inherent limitations in strength and ductility of Mg alloys. Finally, this nano-fiber patterning approach could be an effective method to engineer hexagonal metals.« less

  13. Self-patterning Gd nano-fibers in Mg-Gd alloys.

    PubMed

    Li, Yangxin; Wang, Jian; Chen, Kaiguo; Shao, Meiyue; Shen, Yao; Jin, Li; Zhu, Guo-Zhen

    2016-12-07

    Manipulating the shape and distribution of strengthening units, e.g. particles, fibers, and precipitates, in a bulk metal, has been a widely applied strategy of tailoring their mechanical properties. Here, we report self-assembled patterns of Gd nano-fibers in Mg-Gd alloys for the purpose of improving their strength and deformability. 1-nm Gd nano-fibers, with a 〈c〉-rod shape, are formed and hexagonally patterned in association with Gd segregations along dislocations that nucleated during hot extrusion. Such Gd-fiber patterns are able to regulate the relative activities of slips and twinning, as a result, overcome the inherent limitations in strength and ductility of Mg alloys. This nano-fiber patterning approach could be an effective method to engineer hexagonal metals.

  14. Self-patterning Gd nano-fibers in Mg-Gd alloys

    NASA Astrophysics Data System (ADS)

    Li, Yangxin; Wang, Jian; Chen, Kaiguo; Shao, Meiyue; Shen, Yao; Jin, Li; Zhu, Guo-Zhen

    2016-12-01

    Manipulating the shape and distribution of strengthening units, e.g. particles, fibers, and precipitates, in a bulk metal, has been a widely applied strategy of tailoring their mechanical properties. Here, we report self-assembled patterns of Gd nano-fibers in Mg-Gd alloys for the purpose of improving their strength and deformability. 1-nm Gd nano-fibers, with a -rod shape, are formed and hexagonally patterned in association with Gd segregations along dislocations that nucleated during hot extrusion. Such Gd-fiber patterns are able to regulate the relative activities of slips and twinning, as a result, overcome the inherent limitations in strength and ductility of Mg alloys. This nano-fiber patterning approach could be an effective method to engineer hexagonal metals.

  15. Equiatomic compounds REIrMg (RE = Y, La-Nd, Sm, Gd-Tm) and RERhMg (RE = Y, Sm, Gd-Tm)

    NASA Astrophysics Data System (ADS)

    Stein, Sebastian; Heletta, Lukas; Pöttgen, Rainer

    2017-09-01

    The equiatomic intermetallic compounds REIrMg (RE = Y, La-Nd, Sm, Gd-Tm) and RERhMg (RE = Y, Sm, Gd-Tm) were synthesized from the elements in sealed niobium ampoules in a high-frequency furnace and characterized based on X-ray powder data. LaIrMg and CeIrMg crystallize with the orthorhombic LaNiAl type structure (Pnma), while all other compounds adopt the TiNiSi type. The structures of YRhMg, GdRh1.190(4)Mg0.810(4), DyRh1.126(5)Mg0.874(5), LaIrMg, NdIr1.033(2)Mg0.967(2) and ErIr1.059(3)Mg0.941(3) were refined from single-crystal X-ray diffractometer data. The striking structural motifs of these phases are tricapped trigonal prisms around the transition metal atoms formed by RE and Mg. The two structure types differ in the connectivity pattern of the trigonal prisms. The rhodium (iridium) atoms build up three-dimensional [RhMg] and [IrMg] networks in which cavities are filled by the rare earth atoms. Temperature dependent magnetic susceptibility measurements on X-ray pure samples of NdIrMg, SmRhMg, GdRhMg, TbRhMg and DyRhMg show Curie-Weiss paramagnetism of the trivalent rare earth ions and magnetic ordering at low temperatures: TC = 9.5 K for NdIrMg and Néel temperatures of 10.0, 16.7, 10.6 and 11.3 K for SmRhMg, GdRhMg, TbRhMg and DyRhMg. TbRhMg and DyRhMg exhibit field-induced spin reorientations (metamagnetism).

  16. Peculiarities of thermoelectric half-Heusler phase formation in Gd-Ni-Sb and Lu-Ni-Sb ternary systems

    SciTech Connect

    Romaka, V.V.; Romaka, L.; Horyn, A.; Rogl, P.; Stadnyk, Yu; Melnychenko, N.; Orlovskyy, M.; Krayovskyy, V.

    2016-07-15

    The phase equilibria in the Gd–Ni–Sb and Lu-Ni-Sb ternary systems were studied at 873 K by X-ray and metallographic analyses in the whole concentration range. The interaction of the elements in the Gd–Ni–Sb system results the formation of five ternary compounds at investigated temperature: Gd{sub 5}Ni{sub 2}Sb (Mo{sub 5}SiB{sub 2}-type), Gd{sub 5}NiSb{sub 2} (Yb{sub 5}Sb{sub 3}-type), GdNiSb (MgAgAs-type), Gd{sub 3}Ni{sub 6}Sb{sub 5} (Y{sub 3}Ni{sub 6}Sb{sub 5}-type), and GdNi{sub 0.72}Sb{sub 2} (HfCuSi{sub 2}-type). At investigated temperature the Lu-Ni-Sb system is characterized by formation of the LuNiSb (MgAgAs-type), Lu{sub 5}Ni{sub 2}Sb (Mo{sub 5}SiB{sub 2}-type), and Lu{sub 5}Ni{sub 0.56}Sb{sub 2.44} (Yb{sub 5}Sb{sub 3}-type) compounds. The disordering in the crystal structure of half-Heusler GdNiSb and LuNiSb was revealed by EPMA and studied by means of Rietveld refinement and DFT modeling. The performed electronic structure calculations are in good agreement with electrical transport property studies. - Graphical abstract: Crystal structure model and electron localization function of Lu{sub 5}Ni{sub 2}Sb. Display Omitted - Highlights: • Gd-Ni-Sb and Lu-Ni-Sb phase diagrams were constructed at 873 K. • GdNiSb and LuNiSb are characterized by disordered crystal structure. • Crystal structure optimization with DFT calculations confirmed crystal structure disorder in GdNiSb and LuNiSb.

  17. Inorganic photosensitizer coupled Gd-based upconversion luminescent nanocomposites for in vivo magnetic resonance imaging and near-infrared-responsive photodynamic therapy in cancers.

    PubMed

    Zhang, Ling'e; Zeng, Leyong; Pan, Yuanwei; Luo, Song; Ren, Wenzhi; Gong, An; Ma, Xuehua; Liang, Hongze; Lu, Guangming; Wu, Aiguo

    2015-03-01

    Inorganic photosensitizer coupled Gd-based upconversion luminescent (UCL) nanocomposites have potential application for both magnetic resonance imaging (MRI) and photodynamic therapy (PDT) of cancers using the light stability and biocompatibility of TiO2 inorganic photosensitizer. However, TiO2 inorganic photosensitizer could only be excited by ultraviolet (UV) light, which was harmful and weakly penetrable in tissues. In this work, folic acid (FA)-targeted NaGdF4:Yb/Tm@SiO2@TiO2 nanocomposites (FA-Gd-Si-Ti NPs) were constructed and synthesized for both in vivo MRI and near infrared (NIR)-responsive inorganic PDT, in which TiO2 component could be excited by NIR light due to the UCL performance of NaGdF4:Yb/Tm component converting NIR to UV light. The results showed the as-prepared FA-Gd-Si-Ti NPs had good biocompatibility in vitro and in vivo. Moreover, MR study indicated that FA-Gd-Si-Ti NPs were good T1-weighted MRI contrast agents with high longitudinal relaxivity (r1) of 4.53 mm(-1) s(-1), also in vivo MRI of nude mice showed "bright" signal in MCF-7 tumor. Under the irradiation of 980 nm laser at the power density of 0.6 W/cm(2) for 20 min, the viability of HeLa and MCF-7 cells incubated with FA-Gd-Si-Ti NPs could decrease from about 90 % to 35 % and 31%, respectively. Furthermore, in vivo PDT of MCF-7 tumor-bearing nude mice model showed that the inhibition ratio of tumors injected with FA-Gd-Si-Ti NPs reached up to 88.6% after 2-week treatment, compared with that of nude mice in control group. Based on the deep penetration of NIR light and the good biocompatibility of TiO2 inorganic photosensitizer, the as-prepared FA-Gd-Si-Ti NPs could have potential applications in both MRI and NIR-responsive PDT of cancers in deep tissues.

  18. Comparison of n-type Gd2O3 and Gd-doped HfO2

    NASA Astrophysics Data System (ADS)

    Losovyj, Ya B.; Wooten, David; Colon Santana, Juan; An, Joonhee Michael; Belashchenko, K. D.; Lozova, N.; Petrosky, J.; Sokolov, A.; Tang, Jinke; Wang, Wendong; Arulsamy, Navamoney; Dowben, P. A.

    2009-01-01

    Gd2O3 and Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd2O3 and Gd-doped HfO2 films, respectively. In the case of Gd2O3, strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO2-silicon and Gd2O3-silicon heterojunctions are demonstrated.

  19. Magnetization reversal in Py/Gd heterostructures

    NASA Astrophysics Data System (ADS)

    Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; Novosad, Valentine; Jiang, J. S.; Hoffmann, Axel

    2017-07-01

    Using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2 nm ) /Gd (2 nm ) ] 25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity of the film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.

  20. Magnetization reversal in Py/Gd heterostructures

    DOE PAGES

    Lapa, Pavel N.; Ding, Junjia; Pearson, John E.; ...

    2017-07-13

    Here, using a combination of magnetometry and magnetotransport techniques, we studied temperature and magnetic-field behavior of magnetization in Py/Gd heterostructures. It was shown quantitatively that proximity with Py enhances magnetic order of Gd. Micromagnetic simulations demonstrate that a spin-flop transition observed in a Py/Gd bilayer is due to exchange-spring rotation of magnetization in the Gd layer. Transport measurements show that the magnetoresistance of a [Py(2nm)/Gd(2nm)]25 multilayer changes sign at the compensation temperature and below 20 K. The positive magnetoresistance above the compensation temperature can be attributed to an in-plane domain wall, which appears because of the structural inhomogeneity of themore » film over its thickness. By measuring the angular dependence of resistance, we are able to determine the angle between magnetizations in the multilayer and the magnetic field at different temperatures. The measurements reveal that, due to a change in the chemical thickness profile, a noncollinear magnetization configuration is only stable in magnetic fields above 10 kOe.« less

  1. MOCVD-derived multilayer Gd0.5Y0.5Ba2Cu3O7-δ films based on a novel heating method

    NASA Astrophysics Data System (ADS)

    Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Xiong, Jie; Tao, Bowan; Li, Yanrong

    2017-02-01

    Multilayer Gd0.5Y0.5Ba2Cu3O7-δ (GdYBCO) films have been deposited by the metal organic chemical vapor deposition process on LaMnO3/epitaxial MgO/ion beam assisted deposition (IBAD)-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. The buffered tapes were heated by the Joule effect after applying a heating current (I h) through the Hastelloy metal substrates. For this kind of current heating method, the heating energy is transmitted from the Hastelloy metal substrate to the oxide buffer layers, thereby the surface temperature of the tape will decline with an increase in the thickness of the deposited GdYBCO film if the heating current is unchanged. Therefore, the multilayer GdYBCO film structure where I h was adjusted for each layer was adopted to make sure that the surface temperature was always high enough to deposit purely c-axis oriented GdYBCO films. With this method, four-layer 1000 nm thick GdYBCO films were successfully prepared and the critical current (I c) reached 328 A cm-1 width (77 K, 0 T), corresponding to the critical current density (J c) of 3.28 MA cm-2 (77 K, 0 T).

  2. Structure and properties of RELiGe2 (RE = La-Nd, Sm-Gd, Yb) compounds

    NASA Astrophysics Data System (ADS)

    Iyer, Abishek K.; Subbarao, Udumula; Peter, Sebastian C.

    2013-02-01

    Single phase samples of RELiGe2 (RE = La-Nd, Sm-Gd, Yb) were synthesized in niobium tubes by high-frequency (HF) heating method. RELiGe2 compounds crystallize in the CaLiSi2 type structure, space group Pnma. LaLiGe2 is diamagnetic, while PrLiGe2, NdLiGe2, EuLiGe2, GdLiGe2 and YbLiGe2 follow Curie-Weiss behavior above 50 K. All compounds are metallic conductors with a specific resistivity at room temperature within the range of 250-900 μωcm.

  3. Silicon-Induced UV Transparency in Phosphate Glasses and Its Application to the Enhancement of the UV Type B Emission of Gd(3).

    PubMed

    Jiménez, José A

    2017-05-10

    The silicon route to improve the ultraviolet (UV) transparency in phosphate glasses is investigated and further exploited to enhance the UV type B (280-320 nm) emission of gadolinium(III) relevant for biomedical applications. The glasses were synthesized with a barium phosphate composition by melt-quenching in ambient atmosphere and the optical properties investigated by optical absorption and photoluminescence (PL) spectroscopy including emission decay kinetics. An improvement in the UV transparency was gradually developed for the glasses melted merely with increasing amounts of Si powder. A particular PL in the visible was also exhibited for such glasses under excitation at 275 nm, consistent with the presence of Si-induced defects. For Si-Gd codoped glasses, the UV transparency was likewise manifested, while the UV emission from Gd(3+) around 312 nm was enhanced with the increase in Si concentration (up to ∼6.7 times). Moreover, along with the Gd(3+) PL intensity enhancement, a linear correlation was revealed between the increase in decay times for the Gd(3+6)P7/2-emitting state and the amount of silicon. It is then suggested that the improved PL properties of gadolinium(III) originate from the increased UV transparency of the host and the consequent precluding of a nonradiative energy transfer from Gd(3+) to the matrix. Accordingly, a role of Si as PL quenching inhibitor is supported. The demonstrated efficacy of the Si-Gd codoping concept realized by a facile glass synthesis procedure may appeal to the application of the UV-emitting glasses for phototherapy lamps.

  4. Planar photovoltaic solar concentrator module

    DOEpatents

    Chiang, C.J.

    1992-12-01

    A planar photovoltaic concentrator module for producing an electrical signal from incident solar radiation includes an electrically insulating housing having a front wall, an opposing back wall and a hollow interior. A solar cell having electrical terminals is positioned within the interior of the housing. A planar conductor is connected with a terminal of the solar cell of the same polarity. A lens forming the front wall of the housing is operable to direct solar radiation incident to the lens into the interior of the housing. A refractive optical element in contact with the solar cell and facing the lens receives the solar radiation directed into the interior of the housing by the lens and directs the solar radiation to the solar cell to cause the solar cell to generate an electrical signal. An electrically conductive planar member is positioned in the housing to rest on the housing back wall in supporting relation with the solar cell terminal of opposite polarity. The planar member is operable to dissipate heat radiated by the solar cell as the solar cell generates an electrical signal and further forms a solar cell conductor connected with the solar cell terminal to permit the electrical signal generated by the solar cell to be measured between the planar member and the conductor. 5 figs.

  5. Planar photovoltaic solar concentrator module

    DOEpatents

    Chiang, Clement J.

    1992-01-01

    A planar photovoltaic concentrator module for producing an electrical signal from incident solar radiation includes an electrically insulating housing having a front wall, an opposing back wall and a hollow interior. A solar cell having electrical terminals is positioned within the interior of the housing. A planar conductor is connected with a terminal of the solar cell of the same polarity. A lens forming the front wall of the housing is operable to direct solar radiation incident to the lens into the interior of the housing. A refractive optical element in contact with the solar cell and facing the lens receives the solar radiation directed into the interior of the housing by the lens and directs the solar radiation to the solar cell to cause the solar cell to generate an electrical signal. An electrically conductive planar member is positioned in the housing to rest on the housing back wall in supporting relation with the solar cell terminal of opposite polarity. The planar member is operable to dissipate heat radiated by the solar cell as the solar cell generates an electrical signal and further forms a solar cell conductor connected with the solar cell terminal to permit the electrical signal generated by the solar cell to be measured between the planar member and the conductor.

  6. Planar photovoltaic solar concentrator module

    SciTech Connect

    Chiang, C.J.

    1992-12-01

    A planar photovoltaic concentrator module for producing an electrical signal from incident solar radiation includes an electrically insulating housing having a front wall, an opposing back wall and a hollow interior. A solar cell having electrical terminals is positioned within the interior of the housing. A planar conductor is connected with a terminal of the solar cell of the same polarity. A lens forming the front wall of the housing is operable to direct solar radiation incident to the lens into the interior of the housing. A refractive optical element in contact with the solar cell and facing the lens receives the solar radiation directed into the interior of the housing by the lens and directs the solar radiation to the solar cell to cause the solar cell to generate an electrical signal. An electrically conductive planar member is positioned in the housing to rest on the housing back wall in supporting relation with the solar cell terminal of opposite polarity. The planar member is operable to dissipate heat radiated by the solar cell as the solar cell generates an electrical signal and further forms a solar cell conductor connected with the solar cell terminal to permit the electrical signal generated by the solar cell to be measured between the planar member and the conductor. 5 figs.

  7. MPACVD processing technologies for planar integrated optics

    NASA Astrophysics Data System (ADS)

    Li, Cheng-Chung; Boudreau, Robert A.; Bowen, Terry P.

    1998-06-01

    Optical circuits based on low-loss glass waveguide are the practical and promising approaches to integrate different functional components for optical communication system. Microwave plasma assisted chemical vapor deposition produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. A microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer thus deposited on the substrates with reasonable high growth rate. Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The main emphasis has been on optimizing the deposition parameters and reproducibility. An uniform, low-loss film can be made by properly balancing the precursor flows. The refractive index of deposited film can also be controlled by adjusting the flow ratio of SiCl4 and GeCl4 bubblers. Deposited films was characterized by prism coupler, loss measurement, residual stress, and composition analysis. The resulted refractive index step can be varied between 1.46 to 1.60. Waveguide can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on mask layer. Core layer was remove by the plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma etch. Etch rate of 3000-4000 angstrom/min has been achieved by using ICP compared to typical etch rate of 200-300 angstrom/min by using conventional RIE.

  8. Room temperature table-like magnetocaloric effect in amorphous Gd50Co45Fe5 ribbon

    NASA Astrophysics Data System (ADS)

    Liu, G. L.; Zhao, D. Q.; Bai, H. Y.; Wang, W. H.; Pan, M. X.

    2016-02-01

    Gd50Co45Fe5 amorphous alloy ribbon with a table-like magnetocaloric effect (MCE) suitable for the ideal Ericsson cycle at room temperature has been developed. In addition to a high magnetic transition temperature of 289 K very close to that of Gd (294 K), a relatively large value of refrigerant capacity (~521 J kg-1) has been achieved under a field change of 5 T. This value of refrigerant capacity (RC) is about 27% and 70% larger than those of Gd (~410 J kg-1) and Gd5Si2Ge2 (~306 J kg-1). More importantly, the peak value of magnetic entropy change (-Δ S\\text{M}\\max ) approaches a nearly constant value of ~3.8 J  ṡ  kg-1  ṡ  K-1 under an applied field change of 0~5 T in a wide temperature span over 40 K around room temperature, which could be used as the candidate working material in the Ericsson-cycle magnetic regenerative refrigerator around room temperature.

  9. Spectroscopic properties of transparent Er-doped oxyfluoride glass-ceramics with GdF₃.

    PubMed

    Środa, Marcin; Szlósarczyk, Krzysztof; Różański, Marek; Sitarz, Maciej; Jeleń, Piotr

    2015-01-05

    Optically active glass-ceramics (GC) with the low-phonon phases of fluorides, doped with Er(3+) was studied. Glass based on SiO₂-Al₂O₃-Na₂F₂-Na₂O-GdF₃-BaO system was obtained. Dopant were introduced to the glass in an amount of 0.01 mol Er₂O₃ per 1 mol of glass. DTA/DSC study shows multi-stage crystallization. XRD identification of obtained phases did not confirm the presence of pure GdF₃ phase. Instead of that ceramization process led to formation of NaGdF₄ and BaGdF₅. The structural changes were studied using FT-IR spectroscopic method. The study of luminescence of the samples confirmed that optical properties of the obtained GC depend on crystallizing phases during ceramization. Time resolved spectroscopy of Er-doped glass showed the 3 and 8 times increase of lifetime of emission from (4)S₃/₂ and (4)F₉/₂ states, respectively. It confirms the erbium ions have ability to locate in the low phonon gadolinium-based crystallites. The results give possibility to obtain a new material for optoelectronic application.

  10. Pulsating White Dwarf Star GD99

    NASA Astrophysics Data System (ADS)

    Chynoweth, K. M.; Thompson, S.; Mullally, F.; Yeates, C.

    2004-12-01

    We present 15 hours of time-series photometry of the variable white dwarf star GD99. These data were obtained at the McDonald Observatory 2.1m Otto Struve Telescope in January 2003, using the Argos CCD photometer. We achieved a noise level as low as 0.07 %, as measured from the power spectrum of our first night. Our observations confirm that GD99 is a unique pulsating white dwarf whose modes show characteristics of both the hot and cold type of DA variable stars. Additionally, GD99 has a large number of modes, making it a good candidate for asteroseismological study. Our preliminary results indicate that this star merits further study to decipher its abundant set of unusual modes. With such a rich period structure, longer continuous data sets will be required to fully resolve the pulsation spectrum.

  11. Effect of Stacking Sequence on Surface Magnetism: Strained hcp Gd(0001) vs fcc Gd(111) Surface

    NASA Astrophysics Data System (ADS)

    Hong, S. C.; Freeman, A. J.

    1997-03-01

    Very recently, the distortion of the bulk bands of Gd was observed with angle resolved photoemission spectrocopy for Gd(0001) films grown on the corrugated Mo(112) surface(C. Waldfried, D.N. McIlroy, C.W. Hutchings, P.A. Dowben, private communication). To clarify the origin of this band distortion, first principles calculations have been done on hcp Gd(0001) and fcc Gd(111) with 2D lattice constants expanded by 20% using the highly precise full-potential linearized augmented plane wave (FLAPW) method(E. Wimmer, H. Krakauer, M. Weinert, and A.J. Freeman Phys. Rev. B24), 864 (1981).. The interlayer spacings were fully relaxed with atomic force and total energy calculations. We found that the strain does not distort the bulk bands significantly; for hcp Gd(0001), the spin magnetic moment(0.61 μ_B) of conduction electrons at the surface layer is enhanced by 13% compared to that (0.54 μ_B) of the bulk-like layer, but for the fcc Gd(111) the moment (0.65 μ_B) at the surface is reduced by 11% compared to that (0.72 μ_B) of the bulk-like layer. This unusal reduction of the magnetic moment at the fcc Gd(111) surface will be discused.

  12. Magnetic properties of CaCu5-type RNi3TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yao, Jinlei; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.; Quezado, S.; Malik, S. K.

    2015-12-01

    Magnetic properties and magnetocaloric effect of CaCu5-type RNi3TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds have been investigated. Magnetic measurements of RNi3TSi display the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of 'RNi3CuSi-RNi3NiSi-RNi3CoSi-RNi3MnSi-RNi3FeSi'. In contrast to GdNi3{Mn, Fe, Co}Si, TbNi3{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi4Si ( 0.5 kOe) to TbNi3CoSi (4 kOe), TbNi3MnSi (13 kOe) and TbNi3FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi3CuSi exhibits a negligible coercive field.

  13. Nine members of a family of nine-membered cyclic coordination clusters; Fe6Ln3 wheels (Ln = Gd to Lu and Y).

    PubMed

    Kühne, Irina A; Mereacre, Valeriu; Anson, Christopher E; Powell, Annie K

    2016-01-18

    We report a family of isostructural nonanuclear Fe(III)-Ln(III) cyclic coordination clusters [Fe(III)(6)Ln(III)(3)(μ-OMe)9(vanox)6(benz)6]. (Ln = Tb (1), Dy (2), Ho (3), Er (4), Tm (5), Yb (6), Lu (7), Y (8) and Gd (9)), containing an odd number of metal ions. The planar cyclic coordination cluster cores are built up from three [Fe2Ln] subunits.

  14. Resonant Photoemission in f Electron Systems: Pu& Gd

    SciTech Connect

    Tobin, J G; Chung, B W; Schulze, R K; Terry, J; Farr, J D; Shuh, D K; Heinzelman, K; Rotenberg, E; Waddill, G D; van der Laan, G

    2003-03-07

    Resonant photoemission in the Pu5f and Pu6p states is compared to that in the Gd4f and Gd5p states. Spectral simulations, based upon and atomic model with angular momentum coupling, are compared to the Gd and Pu results. Additional spectroscopic measurements of Pu, including core level photoemission and x-ray absorption are also presented.

  15. Resonant photoemission in f electron systems: Pu and Gd

    SciTech Connect

    Tobin, J.G.; Chung, B.W.; Waddill, G.D.; Schulze, R.K.; Terry,J.; Farr, J.D.; Zocco, T.; Shuh, D.K.; Heinzelman, K.; Rotenberg, E.; Vander Laan, G.

    2003-10-14

    Resonant photoemission in the Pu 5f and Pu 6p states is compared to that in the Gd 4f and Gd 5p states. Spectral simulations, based upon an atomic model with angular momentum coupling, are compared to the Gd and Pu results. Additional spectroscopic measurements of Pu, including core level photoemission and x-ray absorption, are also presented.

  16. Reinvestigation of the Cd–Gd phase diagram

    PubMed Central

    Reichmann, Thomas L.; Ipser, Herbert

    2014-01-01

    The complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD, SEM and DTA. All previously reported phases, i.e., CdGd, Cd2Gd, Cd3Gd, Cd45Gd11, Cd58Gd13, and Cd6Gd, could be confirmed. In addition, a new intermetallic compound with a stoichiometric composition corresponding to “Cd8Gd” was found to exist. It was obtained that “Cd8Gd” decomposes peritectically at 465 °C. Homogeneity ranges of all intermetallic compounds were determined at distinct temperatures. In addition, the maximum solubilities of Cd in the low- and high-temperature modifications of Gd were determined precisely as 4.6 and 22.6 at.%, respectively. All invariant reaction temperatures (with the exception of the formation of Cd58Gd13) as well as liquidus temperatures were determined, most probably, Cd58Gd13 is formed in a peritectoid reaction from Cd45Gd11 and Cd6Gd at a temperature below 700 °C. PMID:25544803

  17. Resonant photoemission in f-electron systems: Pu and Gd

    NASA Astrophysics Data System (ADS)

    Tobin, J. G.; Chung, B. W.; Schulze, R. K.; Terry, J.; Farr, J. D.; Shuh, D. K.; Heinzelman, K.; Rotenberg, E.; Waddill, G. D.; van der Laan, G.

    2003-10-01

    Resonant photoemission in the Pu 5f and Pu 6p states is compared to that in the Gd 4f and Gd 5p states. Spectral simulations, based upon an atomic model with angular momentum coupling, are compared to the Gd and Pu results. Additional spectroscopic measurements of Pu, including core level photoemission and x-ray absorption, are also presented.

  18. MRI of cells and mice at 1 and 7 Tesla with Gd-targeting agents: when the low field is better!

    PubMed

    Geninatti-Crich, Simonetta; Szabo, Ibolya; Alberti, Diego; Longo, Dario; Aime, Silvio

    2011-01-01

    Tumor cells were targeted with Gd-loaded/LDL (low density lipoproteins) adducts consisting of ca 300 Gd(III) amphiphilic complexes incorporated in the lipophilic LDL particles. The long reorientational time of the Gd(III) complex in the supramolecular adduct yielded a relaxivity peak at ca 1 T, whereas its relaxivity at 7 T was 5 times less. The field-dependent relaxivity markedly affected the signal enhancement attainable at the two magnetic fields. As tumor cells showed up-regulation of LDL transporters, B16 melanoma cells were labeled with the Gd-loaded/LDL adduct. Each cell contained ca 2 × 10(9) Gd atoms. Upon dispersion of 5000 labeled cells in 1 μl of agar, signal intensity (SI) enhancements of about 30 and 7% were observed at 1 and 7 T, respectively. The results obtained on cellular systems were confirmed in vivo upon the administration of Gd-loaded/LDL particles to C57 mice bearing a transplanted melanoma (B16) tumor. From the herein reported results, one may conclude that, for slowly moving Gd complexes, it is possible to obtain in vivo sensitivity enhancements at 1 T several times higher than that attained at high fields.

  19. Comparison of Gd-Bz-TTDA, Gd-EOB-DTPA, and Gd-BOPTA for dynamic MR imaging of the liver in rat models.

    PubMed

    Jaw, Twei-Shiun; Chen, Shih-Hsien; Wang, Yun-Ming; Hsu, Jui-Sheng; Kuo, Yu-Ting; Chiu, Yen-Yu; Tsai, Kun-Bow; Hsieh, Tsyh-Jyi; Liu, Gin-Chung

    2012-03-01

    To evaluate the competitive potential of a new lipophilic paramagnetic complex, Gd-Bz-TTDA [4-benzyl-3,6,10-tri (carboxymethyl)-3,6,10-triazado-decanedioic acid] compared with two other commercially available MR hepatobiliary contrast agents, gadobenate dimeglumine (Gd-BOPTA) and gadoxetic acid (Gd-EOB-DTPA), dynamic MR imaging studies were performed on normal and hepatocellular carcinoma (HCC) rat models using a 1.5-Tesla MR scanner. The results indicate that normal rats that were injected with 0.1 mmol/kg Gd-Bz-TTDA showed significantly more intense and persistent liver enhancement than those that were injected with the same dose of Gd-EOB-DTPA or Gd-BOPTA. All of these agents showed similar enhancement patterns in the implanted HCC. The liver-lesion contrast-to-noise ratios were higher and more persistent in rats that were injected with Gd-Bz-TTDA. These results indicate that Gd-Bz-TTDA is comparable with the commercially available hepatobiliary agents, Gd-EOB-DTPA and Gd-BOPTA, and can result in more intense and prolonged liver enhancement while still providing better liver-lesion discrimination. These results warrant further large-scale studies.

  20. The planar dynamics of airships

    NASA Technical Reports Server (NTRS)

    Regan, F. J.

    1975-01-01

    The forces and moments acting upon a LTA vehicle are considered in order to develop parameters describing planar motion. Similar expressions for HTA vehicles will be given to emphasize the greater complexity of aerodynamic effects when buoyancy effects cannot be neglected. A brief summary is also given of the use of virtual mass coefficients to calculate loads on airships.

  1. Neutron resonances in planar waveguides

    SciTech Connect

    Kozhevnikov, S. V. E-mail: kzh-sv@mail.ru; Ignatovich, V. K.; Petrenko, A. V.; Radu, F.

    2016-12-15

    We report on the results of the experimental investigation of the spectral width of neutron resonances in planar waveguides using the time-of-flight method and recording the microbeam emerging from the waveguide end. Experimental data are compared with the results of theoretical calculations.

  2. Eckart frames for planar molecules

    NASA Astrophysics Data System (ADS)

    Wei, Hua

    2003-04-01

    Explicit analytic expressions of Eckart frames for planar molecules in Radau, Jacobi and bond coordinates have been presented. The orientation of the frame axis system with respect to the molecular plane at equilibrium is specified by an angle θ1e.

  3. Lorentz microscopy on dynamically written domains in GdTbFe

    NASA Astrophysics Data System (ADS)

    Greidanus, F. J. A. M.; Jacobs, B. A. J.; den Broeder, F. J. A.; Spruit, J. H. M.; Rosenkranz, M.

    1989-03-01

    In this letter a new method for the observation of thermomagnetically written domains using Lorentz electron microscopy is discussed. Domains are written in a GdTbFe layer deposited on a specially prepared silicon wafer disk, provided with Si3N4 windows. This allows direct observation by Lorentz microscopy of the magnetization patterns dynamically written under recording conditions. It is shown that by locally heating the GdTbFe layer with a continuous laser beam, combined with high-frequency switching of the magnetic field, very high storage densities can be achieved. Domains with a length of 0.25 μm in the direction of disk rotation could be written.

  4. The External Pollution of GD 362: The Bulk Composition of an Extra-Solar Asteroid?

    NASA Astrophysics Data System (ADS)

    Melis, Carl; Koester, D.; Zuckerman, B.; Hansen, B.; Jura, M.

    2006-12-01

    Keck HIRES (Vogt et. al 1994) and NIRSPEC (McLean et. al 1998) spectroscopy of GD 362 reveals the greatest number of atomic and ionic species ever documented in a white dwarf. We determine abundances of H, He, Na, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Sr, and upper limits on C and O in the star's photosphere. The discovery of helium requires substantial modification of previously accepted stellar parameters derived assuming a hydrogen-dominated atmosphere. GD 362 has a dusty circumstellar disk. If the disk resulted from the tidal disruption of an asteroid, then our measured elemental abundances represent the first thorough study of the bulk composition of an extrasolar minor planet.

  5. Depth oscillations of electronuclear reaction yield initiated by relativistic planar channeled electrons: quantum versus classical calculations

    NASA Astrophysics Data System (ADS)

    Eikhorn, Yu. L.; Korotchenko, K. B.; Pivovarov, Yu. L.; Tukhfatullin, T. A.

    2017-07-01

    The first experiment on electronuclear reaction initated by axially channeled 700 MeV electrons in a Si crystal [1] revealed remarkable depth oscillations of reaction yield. The effect was satisfactory explained [2] by computer simulations using binary collisions model. In this work the oscillations effect is investigated for planar channeled electrons in a Si crystal using the new computer code BCM-1.0 which allows both classical and quantum calculations of channeled electrons flux density.

  6. Effect of addition of soft magnetic alloy particles on the flux trapping in Gd123 bulk superconductors

    NASA Astrophysics Data System (ADS)

    Xu, Y.; Tsuzuki, K.; Zhang, Y.; Kimura, Y.; Izumi, M.

    2010-06-01

    Pinning stability and the introduction of magnetic flux pinning is an essential problem in applications of high-Tc superconductors. Study on the role of addition of a variety of metal oxides into GdBa2Cu3O7-δ (Gd123) bulk superconductors was carried out. We found that the addition of 0.05 wt. % of soft magnetic alloy particles Fe-Cu-Nb-Si-Cr-B (Fe-B) into the Gd123 contributes to the enhancement of the critical current density (Jc) under a wide range of applied magnetic fields up to 3 T. The Fe-B particles refined less than 10 μm by ball milling indicate no remarkable contribution on the Jc under the magnetic field. The reduction of the Ba content resulted in the appearance of a peak of Jc which has been observed in the Gd/Ba solid solution with rich Ba content. These results let us discriminate the effect of the magnetic particles from other conventional flux pinning mechanism. The peak of Jc under magnetic field was not only observed in the part along the c-axis under the seed of the sample but also in the growth sector around the periphery of the Gd123 bulk with Fe-B addition. It indicates that the magnetic particles inclusions play an important role on the homogeneous enhancement of Jc and the high flux pinning performance.

  7. Nb multilayer planarization technology for a subnanosecond Josephson 1K-bit RAM

    SciTech Connect

    Nagasawa, S.; Wada, Y.; Tsuge, H.; Hidaka, M.; Ishida, I.; Tahara, S.

    1989-03-01

    Nb multilayer planarization technology has been developed. This planarization technology consists of an etch-back technique using 2000-molecular weight polystyrene and SiO/sub 2/ for the junction layer and wiring layers, and a tapered edge etching technique for contact between individual wiring layers. A Josephson 1K-bit random access memory (RAM) has been fabricated using this planarization technology. Excellent planarity, wherein level differences in all step areas are reduced to less than 1/20th of their original value, was achieved in the multilayer structure of the RAM. Moreover, appropriate RAM operations, with 570ps minimum access time and 13mW power dissipation, were confirmed.

  8. Planarization for three-dimensional photonic crystals and other multi-level nanoscale structures.

    PubMed

    Subramania, G

    2007-01-24

    We describe an approach for achieving local as well as global planarization in the fabrication of multi-level nanoscale structures. Using a 'pre-fill-in' technique, where trenches are filled with SiO(2) prior to the application of a planarizing liquid, we demonstrate that the global degree of planarization can be improved from a mere approximately 25% to over approximately 90%. The first layer of a woodpile photonic lattice with a period of approximately 0.5 microm and a minimum feature size of approximately 0.2 microm is used as an example structure to illustrate the issues involved in planarization. This method provides an attractive and simpler alternative to the traditional chemical mechanical polishing approach, which can be quite complicated at nanoscale features involving non-traditional materials.

  9. DNA vaccine expressing the mimotope of GD2 ganglioside induces protective GD2 cross-reactive antibody responses.

    PubMed

    Bolesta, Elizabeth; Kowalczyk, Aleksandra; Wierzbicki, Andrzej; Rotkiewicz, Piotr; Bambach, Barbara; Tsao, Chun-Yen; Horwacik, Irena; Kolinski, Andrzej; Rokita, Hanna; Brecher, Martin; Wang, Xinhui; Ferrone, Soldano; Kozbor, Danuta

    2005-04-15

    The GD2 ganglioside expressed on neuroectodermally derived tumors, including neuroblastoma and melanoma, is weakly immunogenic in tumor-bearing patients and induces predominantly immunoglobulin (Ig)-M antibody responses in the immunized host. Here, we investigated whether interconversion of GD2 into a peptide mimetic form would induce GD2 cross-reactive IgG antibody responses in mice. Screening of the X(15) phage display peptide library with the anti-GD2 monoclonal antibody (mAb) 14G2a led to isolation of mimetic peptide 47, which inhibited the binding of 14G2a antibody to GD2-positive tumor cells. The peptide was also recognized by GD2-specific serum antibodies from a patient with neuroblastoma, suggesting that it bears an internal image of GD2 ganglioside expressed on the tumor cells. The molecular basis for antigenicity of the GD2 mimetic peptide, established by molecular modeling and mutagenesis studies, led to the generation of a 47-LDA mutant with an increased mimicry to GD2. Immunization of mice with peptide 47-LDA-encoded plasmid DNA elicited GD2 cross-reactive IgG antibody responses, which were increased on subsequent boost with GD2 ganglioside. The vaccine-induced antibodies recognized GD2-positive tumor cells, mediated complement-dependent cytotoxicity, and exhibited protection against s.c. human GD2-positive melanoma growth in the severe combined immunodeficient mouse xenograft model. The results from our studies provide insights into approaches for boosting GD2 cross-reactive IgG antibody responses by minigene vaccination with a protective epitope of GD2 ganglioside.

  10. A planar chiral [2.2]paracyclophane derived N-heterocyclic stannylene.

    PubMed

    Piel, Isabel; Dickschat, Julia V; Pape, Tania; Hahn, F Ekkehardt; Glorius, Frank

    2012-12-07

    The reaction of pseudo-ortho-4,12-N,N'-diphenyldiamino-[2.2]paracyclophane ((±)-3) with Sn[N(SiMe(3))(2)](2) results in the formation of the monomeric planar chiral N-heterocyclic stannylene (±)-4, featuring a unique [2.2]paracyclophane backbone, which has been characterized by an X-ray diffraction study.

  11. Enantioselective synthesis of planar-chiral benzosiloloferrocenes by Rh-catalyzed intramolecular C-H silylation.

    PubMed

    Shibata, Takanori; Shizuno, Tsubasa; Sasaki, Tomoya

    2015-05-07

    The first synthesis of planar-chiral benzosiloloferrocenes was achieved by the intramolecular reaction of 2-(dimethylhydrosilyl)arylferrocenes. The enantioselective cross dehydrogenative coupling of an sp(2) C-H bond of ferrocene with a Si-H bond proceeded efficiently with the use of a Rh-chiral diene catalyst.

  12. Molecular field theory analysis of Gd2Co2Al and Gd2Co2Ga compounds

    NASA Astrophysics Data System (ADS)

    Kervan, S.

    2003-10-01

    The molecular field theory based on two-sublattice model was employed to analyse the temperature dependence of the magnetization of Gd2Co2Al and Gd2Co2Ga compounds. The molecular field coefficients nCoCo, nGdCo and nGdGd were obtained by a numerical fitting process. The theoretically calculated Curie temperatures were found to agree well with the experimental results. The exchange fields HCo(T) and HGd(T) were presented.

  13. Gd-EOB-DTPA-enhanced MRI for evaluation of liver function: Comparison between signal-intensity-based indices and T1 relaxometry

    PubMed Central

    Haimerl, Michael; Verloh, Niklas; Zeman, Florian; Fellner, Claudia; Nickel, Dominik; Lang, Sven A.; Teufel, Andreas; Stroszczynski, Christian; Wiggermann, Philipp

    2017-01-01

    Gadolinium ethoxybenzyl-diethylenetriaminepentaacetic acid (Gd-EOB-DTPA) is a paramagnetic hepatobiliary magnetic resonance (MR) contrast agent. Due to its OATP1B1/B3-dependent hepatocyte-specific uptake and paramagnetic properties increasing evidence has emerged to suggest that Gd-EOB-DTPA-enhanced MRI can be potentially used for evaluation of liver function. In this paper we compare the diagnostic performance of Gd-EOB-DTPA-enhanced relaxometry-based and commonly used signal-intensity (SI)-based indices, including the hepatocellular uptake index (HUI) and SI-based indices corrected by spleen or muscle, for evaluation of liver function, determined using the Indocyanin green clearance (ICG) test. Simple linear regression model showed a significant correlation of the plasma disappearance rate of ICG (ICG-PDR) with all Gd-EOB-DTPA-enhanced MRI-based liver function indices with a significantly better correlation of relaxometry-based indices on ICG-PDR compared to SI-based indices. Among SI-based indices, HUI achieved best correlation on ICG-PDR and no significant difference of respective correlations on ICG-PDR could be shown. Assessment of liver volume and consecutive evaluation of multiple linear regression model revealed a stronger correlation of ICG-PDR with both (SI)-based and T1 relaxometry-based indices. Thus, liver function can be estimated quantitatively from Gd-EOB-DTPA–enhanced MRI-based indices. Here, indices derived from T1 relaxometry are superior to SI-based indices, and all indices benefit from taking into account respective liver volumes. PMID:28266528

  14. Principles of planar polarity in animal development

    PubMed Central

    Goodrich, Lisa V.; Strutt, David

    2011-01-01

    Planar polarity describes the coordinated polarisation of cells or structures in the plane of a tissue. The patterning mechanisms that underlie planar polarity are well characterised in Drosophila, where many events are regulated by two pathways: the ‘core’ planar polarity complex and the Fat/Dachsous system. Components of both pathways also function in vertebrates and are implicated in diverse morphogenetic processes, some of which self-evidently involve planar polarisation and some of which do not. Here, we review the molecular mechanisms and cellular consequences of planar polarisation in diverse contexts, seeking to identify the common principles across the animal kingdom. PMID:21521735

  15. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-08-23

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  16. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-06-24

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping lase pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  17. Planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, D.B.

    1989-03-21

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

  18. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1989-03-21

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

  19. Planar polarity of ependymal cilia.

    PubMed

    Kishimoto, Norihito; Sawamoto, Kazunobu

    2012-02-01

    Ependymal cells, epithelial cells that line the cerebral ventricles of the adult brain in various animals, extend multiple motile cilia from their apical surface into the ventricles. These cilia move rapidly, beating in a direction determined by the ependymal planar cell polarity (PCP). Ciliary dysfunction interferes with cerebrospinal fluid circulation and alters neuronal migration. In this review, we summarize recent studies on the cellular and molecular mechanisms underlying two distinct types of ependymal PCP. Ciliary beating in the direction of fluid flow is established by a combination of hydrodynamic forces and intracellular planar polarity signaling. The ciliary basal bodies' anterior position on the apical surface of the cell is determined in the embryonic radial glial cells, inherited by ependymal cells, and established by non-muscle myosin II in early postnatal development.

  20. Manufacturing of planar ceramic interconnects

    SciTech Connect

    Armstrong, B.L.; Coffey, G.W.; Meinhardt, K.D.; Armstrong, T.R.

    1996-12-31

    The fabrication of ceramic interconnects for solid oxide fuel cells (SOFC) and separator plates for electrochemical separation devices has been a perennial challenge facing developers. Electrochemical vapor deposition (EVD), plasma spraying, pressing, tape casting and tape calendering are processes that are typically utilized to fabricate separator plates or interconnects for the various SOFC designs and electrochemical separation devices. For sake of brevity and the selection of a planar fuel cell or gas separation device design, pressing will be the only fabrication technique discussed here. This paper reports on the effect of the characteristics of two doped lanthanum manganite powders used in the initial studies as a planar porous separator for a fuel cell cathode and as a dense interconnect for an oxygen generator.

  1. Window defect planar mapping technique

    NASA Technical Reports Server (NTRS)

    Minton, F. R.; Minton, U. O. (Inventor)

    1976-01-01

    A method of planar mapping defects in a window having an edge surface and a planar surface. The method is comprised of steps for mounting the window on a support surface. Then a light sensitive paper is placed adjacent to the window surface. A light source is positioned adjacent to the window edge. The window is then illuminated with the source of light for a predetermined interval of time. Defects on the surface of the glass, as well as in the interior of the glass are detected by analyzing the developed light sensitive paper. The light source must be in the form of optical fibers or a light tube whose light transmitting ends are placed near the edge surface of the window.

  2. Summing Planar Bosonic Open Strings

    SciTech Connect

    Bardakci, Korkut

    2006-02-16

    In earlier work, planar graphs of massless {phi}{sup 3} theory were summed with the help of the light cone world sheet picture and the mean field approximation. In the present article, the same methods are applied to the problem of summing planar bosonic open strings. They find that in the ground state of the system, string boundaries form a condensate on the world sheet, and a new string emerges from this summation. Its slope is always greater than the initial slope, and it remains non-zero even when the initial slope is set equal to zero. If they assume the initial string tends to a field a theory in the zero slope limit, this result provides evidence for string formation in field theory.

  3. Compact planar microwave blocking filters

    NASA Technical Reports Server (NTRS)

    U-Yen, Kongpop (Inventor); Wollack, Edward J. (Inventor)

    2012-01-01

    A compact planar microwave blocking filter includes a dielectric substrate and a plurality of filter unit elements disposed on the substrate. The filter unit elements are interconnected in a symmetrical series cascade with filter unit elements being organized in the series based on physical size. In the filter, a first filter unit element of the plurality of filter unit elements includes a low impedance open-ended line configured to reduce the shunt capacitance of the filter.

  4. PANEL CODE FOR PLANAR CASCADES

    NASA Technical Reports Server (NTRS)

    Mcfarland, E. R.

    1994-01-01

    The Panel Code for Planar Cascades was developed as an aid for the designer of turbomachinery blade rows. The effective design of turbomachinery blade rows relies on the use of computer codes to model the flow on blade-to-blade surfaces. Most of the currently used codes model the flow as inviscid, irrotational, and compressible with solutions being obtained by finite difference or finite element numerical techniques. While these codes can yield very accurate solutions, they usually require an experienced user to manipulate input data and control parameters. Also, they often limit a designer in the types of blade geometries, cascade configurations, and flow conditions that can be considered. The Panel Code for Planar Cascades accelerates the design process and gives the designer more freedom in developing blade shapes by offering a simple blade-to-blade flow code. Panel, or integral equation, solution techniques have been used for several years by external aerodynamicists who have developed and refined them into a primary design tool of the aircraft industry. The Panel Code for Planar Cascades adapts these same techniques to provide a versatile, stable, and efficient calculation scheme for internal flow. The code calculates the compressible, inviscid, irrotational flow through a planar cascade of arbitrary blade shapes. Since the panel solution technique is for incompressible flow, a compressibility correction is introduced to account for compressible flow effects. The analysis is limited to flow conditions in the subsonic and shock-free transonic range. Input to the code consists of inlet flow conditions, blade geometry data, and simple control parameters. Output includes flow parameters at selected control points. This program is written in FORTRAN IV for batch execution and has been implemented on an IBM 370 series computer with a central memory requirement of approximately 590K of 8 bit bytes. This program was developed in 1982.

  5. Enjoyment of Euclidean planar triangles

    NASA Astrophysics Data System (ADS)

    Srinivasan, V. K.

    2013-09-01

    This article adopts the following classification for a Euclidean planar ?, purely based on angles alone. A Euclidean planar triangle is said to be acute angled if all the three angles of the Euclidean planar ? are acute angles. It is said to be right angled at a specific vertex, say B, if the angle ? is a right angle with the two remaining angles as acute angles. It is said to be obtuse angled at the vertex B if ? is an obtuse angle, with the two remaining angles as acute angles. In spite of the availability of numerous text books that contain our human knowledge of Euclidean plane geometry, softwares can offer newer insights about the characterizations of planar geometrical objects. The author's characterizations of triangles involve points like the centroid G, the orthocentre H of the ?, the circumcentre S of the ?, the centre N of the nine-point circle of the ?. Also the radical centre rc of three involved diameter circles of the sides BC, AC and AB of the ? provides a reformulation of the orthocentre, resulting in an interesting theorem, dubbed by the author as 'Three Circles Theorem'. This provides a special result for a right-angled ?, again dubbed by the author as 'The Four Circles Theorem'. Apart from providing various inter connections between the geometrical points, the relationships between shapes of the triangle and the behaviour of the points are reasonably explored in this article. Most of these results will be useful to students that take courses in Euclidean Geometry at the college level and the high school level. This article will be useful to teachers in mathematics at the high school level and the college level.

  6. Fully planar method for creating adjacent ``self-isolating'' silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Glenn, J. L., Jr.; Neudeck, G. W.; Subramanian, C. K.; Denton, J. P.

    1992-01-01

    A novel and simple process is demonstrated for creating isolated silicon-on-insulator (SOI) tubs adjacent to selective epitaxial substrate layers. The process results in a fully planar wafer surface which is uniquely suited for mixed bipolar/complementary metal-oxide-semiconductor device fabrication. Low-temperature epitaxial lateral overgrowth (ELO) using SiH2Cl2/HCl/H2 is carried out in a reduced-pressure chemical vapor deposition reactor to create SOI islands in thermally grown SiO2 valleys. SOI islands and epitaxial seed regions are ``self-isolated'' by chemical-mechanical planarization. The as-grown ELO is single-crystal material with well-defined facets. Planarized SOI and epilayer regions have planar, featureless surfaces. Defect etching for the nonoptimized SOI layers indicates about 5×104 stacking faults/cm2.

  7. Cilia organize ependymal planar polarity.

    PubMed

    Mirzadeh, Zaman; Han, Young-Goo; Soriano-Navarro, Mario; García-Verdugo, Jose Manuel; Alvarez-Buylla, Arturo

    2010-02-17

    Multiciliated epithelial cells, called ependymal cells, line the ventricles in the adult brain. Most ependymal cells are born prenatally and are derived from radial glia. Ependymal cells have a remarkable planar polarization that determines orientation of ciliary beating and propulsion of CSF. Disruption of ependymal ciliary beating, by injury or disease, results in aberrant CSF circulation and hydrocephalus, a common disorder of the CNS. Very little is known about the mechanisms guiding ependymal planar polarity and whether this organization is acquired during ependymal cell development or is already present in radial glia. Here we show that basal bodies in ependymal cells in the lateral ventricle walls of adult mice are polarized in two ways: (1) rotational; angle of individual basal bodies with respect to their long axis and (2) translational; the position of basal bodies on the apical surface of the cell. Conditional ablation of motile cilia disrupted rotational orientation, but translational polarity was largely preserved. In contrast, translational polarity was dramatically affected when radial glial primary cilia were ablated earlier in development. Remarkably, radial glia in the embryo have a translational polarity that predicts the orientation of mature ependymal cells. These results suggest that ependymal planar cell polarity is a multistep process initially organized by primary cilia in radial glia and then refined by motile cilia in ependymal cells.

  8. NMR planar microcoil for microanalysis

    NASA Astrophysics Data System (ADS)

    Sorli, B.; Chateaux, J. F.; Quiquerez, L.; Bouchet-Fakri, L.; Briguet, A.; Morin, P.

    2006-11-01

    This article deals with the analysis of small sample volume by using a planar microcoil and a micromachined cavity. This microcoil is used as a nuclear magnetic resonance (NMR) radio frequency detection coil in order to perform in vitro NMR analysis of the sample introduced into the microcavity. It is a real challenging task to develop microsystem for NMR spectrum extraction for smaller and smaller sample volume. Moreover, it is advantageous that these microsystems could be integrated in a Micro Total Analysing System (μ -TAS) as an analysing tool. In this paper, NMR theory, description, fabrication process and electrical characterization of planar microcoils receiver are described. Results obtained on NMR microspectroscopy experiments have been performed on water and ethanol, using a 1 mm diameter planar coil. This microcoil is tuned and matched at 85.13 MHz which is the Larmor frequency of proton in a 2 T magnetic field. This paper has been presented at “3e colloque interdisciplinaire en instrumentation (C2I 2004)”, École Normale Supérieure de Cachan, 29 30 janvier 2004.

  9. Cilia organize ependymal planar polarity

    PubMed Central

    Mirzadeh, Zaman; Han, Young-Goo; Soriano-Navarro, Mario; García-Verdugo, Jose Manuel; Alvarez-Buylla, Arturo

    2010-01-01

    Multi-ciliated epithelial cells, called ependymal cells, line the ventricles in the adult brain. Most ependymal cells are born prenatally and are derived from radial glia. Ependymal cells have a remarkable planar polarization that determines orientation of ciliary beating and propulsion of cerebrospinal fluid (CSF). Disruption of ependymal ciliary beating, by injury or disease, results in aberrant CSF circulation and hydrocephalus, a common disorder of the central nervous system. Very little is known about the mechanisms guiding ependymal planar polarity and whether this organization is acquired during ependymal cell development or is already present in radial glia. Here we show that basal bodies in ependymal cells in the lateral ventricle walls of adult mice are polarized in two ways: i) rotational; angle of individual basal bodies with respect to their long axis and ii) translational; the position of basal bodies on the apical surface of the cell. Conditional ablation of motile cilia disrupted rotational orientation, but translational polarity was largely preserved. In contrast, translational polarity was dramatically affected when radial glial primary cilia were ablated earlier in development. Remarkably, radial glia in the embryo have a translational polarity that predicts the orientation of mature ependymal cells. These results suggest that ependymal planar cell polarity is a multi-step process initially organized by primary cilia in radial glia and then refined by motile cilia in ependymal cells. PMID:20164345

  10. The planar shape of drumlins

    NASA Astrophysics Data System (ADS)

    Spagnolo, Matteo; Clark, Chris D.; Hughes, Anna L. C.; Dunlop, Paul; Stokes, Chris R.

    2010-12-01

    The asymmetry of the planar shape of drumlins is an established paradigm in the literature and characterizes drumlins as resembling tear drops with a blunt (bullet-shaped) stoss end and a tapering (pointed) lee end. It is widely cited and never been seriously questioned. In this paper, the planar shape of 44,500 drumlins mapped in various regional settings from drumlin fields in North America and Northern Europe were objectively analysed by means of Geographic Information System tools. Two parameters were considered. The first (denoted here as Aspl) focuses on the relative position of the point of intersection between the axes of the maximum length and the maximum width. It is defined as the distance between the upstream (i.e. beginning of the drumlin) and the intersection point (measured along the longitudinal axis) divided by the entire length of the long axis. Results indicate that the intersection point of the majority of drumlins (64%) is very close to the longitudinal midpoint (0.33 < Aspl < 0.66). The second parameter ( Aspl _A) is defined as the ratio between the area of the upstream half of the drumlin to that of the entire drumlin. Results show that for most drumlins (81%), the upper half area is almost as large as the down-half (0.45 < Aspl _A < 0.55). Taken together, these results concordantly indicate that drumlin planar shape has a strong tendency to be longitudinally symmetric and that the long-established paradigm of their plan form is false.

  11. Yb-doped Gd2O2CO3: Structure, microstructure, thermal and magnetic behaviour

    NASA Astrophysics Data System (ADS)

    Artini, Cristina; Locardi, Federico; Pani, Marcella; Nelli, Ilaria; Caglieris, Federico; Masini, Roberto; Plaisier, Jasper Rikkert; Costa, Giorgio Andrea

    2017-04-01

    persistent luminescence, with the emission taking place at 970 nm in correspondence of the Yb3+2F7/2-2F5/2 transition, detectable up to 144 h after the end of irradiation. The origin of persistent luminescence is still substantially unclear, even if it is well known that excitation energy has to be stored in an intrinsic or extrinsic trap to be then slowly released. Extrinsic traps can derive from the presence of an aliovalent ion within the matrix; this should be the case of Yb-doped Gd2O2CO3, due to the valence instability of Yb, that is believed to be induced by irradiation [19,20]. In this respect, the precise knowledge of the dioxycarbonate crystal structure and its compositional extent, as well as the determination of the Yb location and its surroundings within the crystal structure, are of great importance. Also a microstructural approach can provide useful hints about the environment of the doping ion, even if it can not replace an investigation at the local scale. The synthetic route used for the preparation of hexagonal RE dioxycarbonates plays an important role in the obtainment of monophasic samples. The formation of the product via transformation of form I or Ia is documented for light lanthanides up to Sm [1], while thermal decomposition of Gd oxalate at 600 °C in static CO2 was performed to obtain hexagonal Gd2O2CO3[21]. The latter method is useful also for the synthesis of some mixed oxycarbonates, such as the ones containing Gd/Nd [9], but not Gd/Ce [8]. Carbonatation of RE2O3 is also reported as successful for RE≡La [1], Pr [1], Gd [21] and Nd [22]. The duration of the synthetic process is significantly shortened by adding the eutectic mixture Li2CO3-Na2CO3-K2CO3 to oxides, and by heating the whole mixture [7]. Nanostructured Yb- and Er-doped Gd2O2CO3 were also obtained, by coating with SiO2 the corresponding RE(OH)CO3·H2O nanoparticles [23]. In this work we present a structural, microstructural, thermal and magnetic study of a series of Yb-doped Gd2O2

  12. Structural and Electronic Evolution from SiC Sheet to Silicene

    NASA Astrophysics Data System (ADS)

    Liu, G.; Wu, M. S.; Ouyang, C. Y.; Xu, B.

    2013-10-01

    The evolution of the structural and electronic properties from SiC sheet to silicene is studied by using first-principles density functional theory. It is found that the planar configurations of the Si-C monolayer systems are basically kept except for the increase of the buckling of the planar structure when the substitution ratio of Si increases. Band gaps of the Si-C monolayer system decrease gradually when the substitution ratio of Si atoms ranges from 0% to 100%. The energy and type of the band gaps are closely related with the substitution ratio of Si atoms and the Si-C order. Further analysis of density of states reveals the orbital contribution of Si and C atoms near the Fermi level. The discussion of the electronic evolution from SiC sheet to silicene would widen the application of the Si-C monolayer systems in the optoelectronic field in the future nanotechnology.

  13. GD SDR Automatic Gain Control Characterization Testing

    NASA Technical Reports Server (NTRS)

    Nappier, Jennifer M.; Briones, Janette C.

    2013-01-01

    The General Dynamics (GD) S-Band software defined radio (SDR) in the Space Communications and Navigation (SCAN) Testbed on the International Space Station (ISS) will provide experimenters an opportunity to develop and demonstrate experimental waveforms in space. The GD SDR platform and initial waveform were characterized on the ground before launch and the data will be compared to the data that will be collected during on-orbit operations. A desired function of the SDR is to estimate the received signal to noise ratio (SNR), which would enable experimenters to better determine on-orbit link conditions. The GD SDR does not have an SNR estimator, but it does have an analog and a digital automatic gain control (AGC). The AGCs can be used to estimate the SDR input power which can be converted into a SNR. Tests were conducted to characterize the AGC response to changes in SDR input power and temperature. This purpose of this paper is to describe the tests that were conducted, discuss the results showing how the AGCs relate to the SDR input power, and provide recommendations for AGC testing and characterization.

  14. GD SDR Automatic Gain Control Characterization Testing

    NASA Technical Reports Server (NTRS)

    Nappier, Jennifer M.; Briones, Janette C.

    2013-01-01

    The General Dynamics (GD) S-Band software defined radio (SDR) in the Space Communications and Navigation (SCAN) Testbed on the International Space Station (ISS) will provide experimenters an opportunity to develop and demonstrate experimental waveforms in space. The GD SDR platform and initial waveform were characterized on the ground before launch and the data will be compared to the data that will be collected during on-orbit operations. A desired function of the SDR is to estimate the received signal to noise ratio (SNR), which would enable experimenters to better determine on-orbit link conditions. The GD SDR does not have an SNR estimator, but it does have an analog and a digital automatic gain control (AGC). The AGCs can be used to estimate the SDR input power which can be converted into a SNR. Tests were conducted to characterize the AGC response to changes in SDR input power and temperature. This purpose of this paper is to describe the tests that were conducted, discuss the results showi ng how the AGCs relate to the SDR input power, and provide recommendations for AGC testing and characterization.

  15. The Dy–Ni–Si system as a representative of the rare earth–Ni–Si family: Its isothermal section and new rare-earth nickel silicides

    SciTech Connect

    Yuan, Fang; Mozharivskyj, Y.; Morozkin, A.V.; Knotko, A.V.; Yapaskurt, V.O.; Pani, M.; Provino, A.; Manfrinetti, P.

    2014-11-15

    The Dy–Ni–Si system has been investigated at 1070 K by X-ray and microprobe analysis. The system contains the 12 known compounds DyNi{sub 10}Si{sub 2}, DyNi{sub 5}Si{sub 3}, DyNi{sub 6}Si{sub 6}, DyNi{sub 4}Si, DyNi{sub 2}Si{sub 2}, Dy{sub 2}Ni{sub 3}Si{sub 5}, DyNiSi{sub 3}, Dy{sub 3}Ni{sub 6}Si{sub 2}, DyNiSi{sub 2}, DyNiSi, Dy{sub 3}NiSi{sub 3}, Dy{sub 3}NiSi{sub 2}, and the new compounds Dy{sub 34}Ni{sub 16−27}Si{sub 50−39} (AlB{sub 2}-type), Dy{sub 2}Ni{sub 15.2−14.1}Si{sub 1.8−2.9} (Th{sub 2}Zn{sub 17}-type), ∼Dy{sub 11}Ni{sub 65}Si{sub 24}, ∼Dy{sub 16}Ni{sub 62}Si{sub 22} (unknown structures), DyNi{sub 7}Si{sub 6} (GdNi{sub 7}Si{sub 6}-type), Dy{sub 3}Ni{sub 8}Si (Ce{sub 3}Co{sub 8}Si-type), DyNi{sub 2}Si (YPd{sub 2}Si-type), ∼Dy{sub 40}Ni{sub 47}Si{sub 13} and ∼Dy{sub 5}Ni{sub 2}Si{sub 3} (unknown structures). Quasi–binary solid solutions were detected at 1070 (870 K) for Dy{sub 2}Ni{sub 17}, DyNi{sub 5}, DyNi{sub 7}, DyNi{sub 3}, DyNi{sub 2}, DyNi, DySi{sub 2} and DySi{sub 1.67}. No detectable solubility is observed for the other binary compounds of the Dy–Ni–Si system. The crystal structures of new phases RNi{sub 7}Si{sub 6} (GdNi{sub 7}Si{sub 6}-type), R{sub 3}Ni{sub 8}Si (Ce{sub 3}Co{sub 8}Si-type), RNi{sub 2}Si (YPd{sub 2}Si-type) and R{sub 3}Ni{sub 12}Si{sub 4} (Gd{sub 3}Ru{sub 4}Al{sub 12}-type), with R=Y, Gd–Tm, has been studied. Magnetic properties of few representative compounds are also reported. - Graphical abstract: The Dy–Ni–Si system has been investigated at 1070 K by X-ray and microprobe analysis. The system contains the 12 known compounds DyNi{sub 10}Si{sub 2}, DyNi{sub 5}Si{sub 3}, DyNi{sub 6}Si{sub 6}, DyNi{sub 4}Si, DyNi{sub 2}Si{sub 2}, Dy{sub 2}Ni{sub 3}Si{sub 5}, DyNiSi{sub 3}, Dy{sub 3}Ni{sub 6}Si{sub 2}, DyNiSi{sub 2}, DyNiSi, Dy{sub 3}NiSi{sub 3}, Dy{sub 3}NiSi{sub 2}, and the new compounds Dy{sub 34}Ni{sub 16−27}Si{sub 50−39}, Dy{sub 2}Ni{sub 15.2−14.1}Si{sub 1.8−2.9}, ∼Dy{sub 11}Ni{sub 65

  16. Abnormal thermal expansion, multiple transitions, magnetocaloric effect, and electronic structure of Gd{sub 6}Co{sub 4.85}

    SciTech Connect

    Zhang, Jiliang; Zheng, Zhigang; Shan, Guangcun E-mail: bobev@udel.edu; Bobev, Svilen E-mail: bobev@udel.edu; Shek, Chan Hung E-mail: bobev@udel.edu

    2015-10-07

    The structure of known Gd{sub 4}Co{sub 3} compound is re-determined as Gd{sub 6}Co{sub 4.85}, adopting the Gd{sub 6}Co{sub 1.67}Si{sub 3} structure type, which is characterized by two disorder Co sites filling the Gd octahedral and a short Gd-Gd distance within the octahedra. The compound shows uniaxial negative thermal expansion in paramagnetic state, significant negative expansion in ferromagnetic state, and positive expansion below ca. 140 K. It also exhibits large magnetocaloric effect, with an entropy change of −6.4 J kg{sup −1} K{sup −1} at 50 kOe. In the lattice of the compound, Co atoms at different sites show different spin states. It was confirmed by the X-ray photoelectron spectra and calculation of electronic structure and shed lights on the abnormal thermal expansion. The stability of such compound and the origin of its magnetism are also discussed based on measured and calculated electronic structures.

  17. Gd(III)-Gd(III) distance measurements with chirp pump pulses

    NASA Astrophysics Data System (ADS)

    Doll, Andrin; Qi, Mian; Wili, Nino; Pribitzer, Stephan; Godt, Adelheid; Jeschke, Gunnar

    2015-10-01

    The broad EPR spectrum of Gd(III) spin labels restricts the dipolar modulation depth in distance measurements between Gd(III) pairs to a few percent. To overcome this limitation, frequency-swept chirp pulses are utilized as pump pulses in the DEER experiment. Using a model system with 3.4 nm Gd-Gd distance, application of one single chirp pump pulse at Q-band frequencies leads to modulation depths beyond 10%. However, the larger modulation depth is counteracted by a reduction of the absolute echo intensity due to the pump pulse. As supported by spin dynamics simulations, this effect is primarily driven by signal loss to double-quantum coherence and specific to the Gd(III) high spin state of S = 7/2. In order to balance modulation depth and echo intensity for optimum sensitivity, a simple experimental procedure is proposed. An additional improvement by 25% in DEER sensitivity is achieved with two consecutive chirp pump pulses. These pulses pump the Gd(III) spectrum symmetrically around the observation position, therefore mutually compensating for dynamical Bloch-Siegert phase shifts at the observer spins. The improved sensitivity of the DEER data with modulation depths on the order of 20% is due to mitigation of the echo reduction effects by the consecutive pump pulses. In particular, the second pump pulse does not lead to additional signal loss if perfect inversion is assumed. Moreover, the compensation of the dynamical Bloch-Siegert phase prevents signal loss due to spatial dependence of the dynamical phase, which is caused by inhomogeneities in the driving field. The new methodology is combined with pre-polarization techniques to measure long distances up to 8.6 nm, where signal intensity and modulation depth become attenuated by long dipolar evolution windows. In addition, the influence of the zero-field splitting parameters on the echo intensity is studied with simulations. Herein, larger sensitivity is anticipated for Gd(III) complexes with zero

  18. Gd(III)-Gd(III) distance measurements with chirp pump pulses.

    PubMed

    Doll, Andrin; Qi, Mian; Wili, Nino; Pribitzer, Stephan; Godt, Adelheid; Jeschke, Gunnar

    2015-10-01

    The broad EPR spectrum of Gd(III) spin labels restricts the dipolar modulation depth in distance measurements between Gd(III) pairs to a few percent. To overcome this limitation, frequency-swept chirp pulses are utilized as pump pulses in the DEER experiment. Using a model system with 3.4 nm Gd-Gd distance, application of one single chirp pump pulse at Q-band frequencies leads to modulation depths beyond 10%. However, the larger modulation depth is counteracted by a reduction of the absolute echo intensity due to the pump pulse. As supported by spin dynamics simulations, this effect is primarily driven by signal loss to double-quantum coherence and specific to the Gd(III) high spin state of S=7/2. In order to balance modulation depth and echo intensity for optimum sensitivity, a simple experimental procedure is proposed. An additional improvement by 25% in DEER sensitivity is achieved with two consecutive chirp pump pulses. These pulses pump the Gd(III) spectrum symmetrically around the observation position, therefore mutually compensating for dynamical Bloch-Siegert phase shifts at the observer spins. The improved sensitivity of the DEER data with modulation depths on the order of 20% is due to mitigation of the echo reduction effects by the consecutive pump pulses. In particular, the second pump pulse does not lead to additional signal loss if perfect inversion is assumed. Moreover, the compensation of the dynamical Bloch-Siegert phase prevents signal loss due to spatial dependence of the dynamical phase, which is caused by inhomogeneities in the driving field. The new methodology is combined with pre-polarization techniques to measure long distances up to 8.6 nm, where signal intensity and modulation depth become attenuated by long dipolar evolution windows. In addition, the influence of the zero-field splitting parameters on the echo intensity is studied with simulations. Herein, larger sensitivity is anticipated for Gd(III) complexes with zero-field splitting

  19. Fluorescent immunosensors using planar waveguides

    NASA Astrophysics Data System (ADS)

    Herron, James N.; Caldwell, Karin D.; Christensen, Douglas A.; Dyer, Shellee; Hlady, Vladimir; Huang, P.; Janatova, V.; Wang, Hiabo K.; Wei, A. P.

    1993-05-01

    The goal of our research program is to develop competitive and sandwich fluoroimmunoassays with high sensitivity and fast response time, that do not require external reagents. Our approach to this problem is to employ an optical immunoassay based on total internal reflection fluorescence (TIRF). Specifically, monoclonal antibodies are immobilized on a planar waveguide. Total internal reflection of light in the planar waveguide sets up an evanescent field which extends about 2000 angstroms from the interface. In the competitive immunoassay, a fluorescent label is coupled to a small synthetic antigen which is packaged with the antibody. In the absence of analyte, the fluorescently labeled antigen binds to the antibody and is excited by the evanescent field. Upon the addition of analyte, the fluorescently labeled antigen molecules are displaced by unlabeled antigen molecules and diffuse out of the evanescent field. In the sandwich assay, a primary or `capture' antibody is immobilized on the planar waveguide, and a secondary or `tracer' antibody (which is labeled with a fluorescent dye) is added to the bulk solution. In the absence of analyte, the tracer antibody remains in solution and very little fluorescence is observed. However, upon addition of analyte, a `molecular sandwich' is formed on the waveguide, composed of: (1) the capture antibody; (2) the analyte; and (3) the tracer antibody. Once this sandwich forms, the tracer antibody is within the evanescent field and fluoresces. Fluorescence emission is detected by a charged- coupled device (CCD). Using this approach, we have developed a prototype immunosensor for the detection of human chorionic gonadotropin (hCG). This device meets our design goals and exhibits a sensitivity of 0.1 - 1 pmolar.

  20. Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

    NASA Astrophysics Data System (ADS)

    Tsybeskov, L.; Mala, S. A.; Wang, X.; Baribeau, J.-M.; Wu, X.; Lockwood, D. J.

    2016-11-01

    We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.

  1. Targeting O-Acetyl-GD2 Ganglioside for Cancer Immunotherapy

    PubMed Central

    Fleurence, Julien; Fougeray, Sophie; Bahri, Meriem; Cochonneau, Denis; Clémenceau, Béatrice; Paris, François; Heczey, Andras

    2017-01-01

    Target selection is a key feature in cancer immunotherapy, a promising field in cancer research. In this respect, gangliosides, a broad family of structurally related glycolipids, were suggested as potential targets for cancer immunotherapy based on their higher abundance in tumors when compared with the matched normal tissues. GD2 is the first ganglioside proven to be an effective target antigen for cancer immunotherapy with the regulatory approval of dinutuximab, a chimeric anti-GD2 therapeutic antibody. Although the therapeutic efficacy of anti-GD2 monoclonal antibodies is well documented, neuropathic pain may limit its application. O-Acetyl-GD2, the O-acetylated-derivative of GD2, has recently received attention as novel antigen to target GD2-positive cancers. The present paper examines the role of O-acetyl-GD2 in tumor biology as well as the available preclinical data of anti-O-acetyl-GD2 monoclonal antibodies. A discussion on the relevance of O-acetyl-GD2 in chimeric antigen receptor T cell therapy development is also included. PMID:28154831

  2. Targeting O-Acetyl-GD2 Ganglioside for Cancer Immunotherapy.

    PubMed

    Fleurence, Julien; Fougeray, Sophie; Bahri, Meriem; Cochonneau, Denis; Clémenceau, Béatrice; Paris, François; Heczey, Andras; Birklé, Stéphane

    2017-01-01

    Target selection is a key feature in cancer immunotherapy, a promising field in cancer research. In this respect, gangliosides, a broad family of structurally related glycolipids, were suggested as potential targets for cancer immunotherapy based on their higher abundance in tumors when compared with the matched normal tissues. GD2 is the first ganglioside proven to be an effective target antigen for cancer immunotherapy with the regulatory approval of dinutuximab, a chimeric anti-GD2 therapeutic antibody. Although the therapeutic efficacy of anti-GD2 monoclonal antibodies is well documented, neuropathic pain may limit its application. O-Acetyl-GD2, the O-acetylated-derivative of GD2, has recently received attention as novel antigen to target GD2-positive cancers. The present paper examines the role of O-acetyl-GD2 in tumor biology as well as the available preclinical data of anti-O-acetyl-GD2 monoclonal antibodies. A discussion on the relevance of O-acetyl-GD2 in chimeric antigen receptor T cell therapy development is also included.

  3. Plausible loop currents in the GdBCO pseudogap phase

    NASA Astrophysics Data System (ADS)

    Boekema, C.; Songatikamas, T.; Browne, M. C.

    2011-03-01

    For the cuprate pseudogap phase, Varma predicts loop currents above Tc . We search for fields near 100 Oe, created by such currents in GdBa 2 Cu 3 O7 - δ (GdBCO). Using MaxEnt-Burg (ME) we analyze zero-field (ZF) muon-spin-rotation (μ SR) data of underdoped (δ 1 Tc = 81 K) and optimal doped (δ 0 Tc = 93 K) GdBCO. ME- μ SR applied to ZF-GdBCO data yields T-dependent signals at 0-MHz (f0) and 0.3-MHz (f1) and hints of 1.4-MHz signals. To cancel any systematic (f1) effect, we analyze DS (t , T) = S (t , TT c) - S (t , T ' T c) . ThisME - BurganalysisofGdBCO (δ 0 δ 1) indicatesweaksignalsnear 1.4 MHzaboveT c (andf 1 disappears) . TheseME - peaksoccurat ~ 1.3 MHz (95 Oe) forGdBCO (δ 1) and ~ 1.5 MHz (110 Oe) forGdBCO (δ 0) . Theseμ SRsignals , plausiblyduetofieldscreatedbyloopcurrents , appearonlyaboveT c . BelowT c , onlyMEbackgroundnoiseexistinDS (t , T) transforms . The ~ 1.4 - MHzpeakintensitytobackgroundratioatitsmaximumis ~ 5 forGdBCO (δ 1) and ~ 4 forGdBCO (δ 0) at ~ 10 degreesaboveT c . Validating predicted loop currents is essential for understanding the pseudogap phase. Research supported by REU NSF & DOE LANL.

  4. Liftings and stresses for planar periodic frameworks.

    PubMed

    Borcea, Ciprian; Streinu, Ileana

    2015-06-01

    We formulate and prove a periodic analog of Maxwell's theorem relating stressed planar frameworks and their liftings to polyhedral surfaces with spherical topology. We use our lifting theorem to prove deformation and rigidity-theoretic properties for planar periodic pseudo-triangulations, generalizing features known for their finite counterparts. These properties are then applied to questions originating in mathematical crystallography and materials science, concerning planar periodic auxetic structures and ultrarigid periodic frameworks.

  5. Liftings and stresses for planar periodic frameworks

    PubMed Central

    Borcea, Ciprian; Streinu, Ileana

    2015-01-01

    We formulate and prove a periodic analog of Maxwell’s theorem relating stressed planar frameworks and their liftings to polyhedral surfaces with spherical topology. We use our lifting theorem to prove deformation and rigidity-theoretic properties for planar periodic pseudo-triangulations, generalizing features known for their finite counterparts. These properties are then applied to questions originating in mathematical crystallography and materials science, concerning planar periodic auxetic structures and ultrarigid periodic frameworks. PMID:26973370

  6. A simulation study of planar swaging deformation

    NASA Astrophysics Data System (ADS)

    Zhang, Cheng-Gen; Jen, Gwang-Shen; Su, Gwang-Huei

    1992-08-01

    Planar swaging deformation was studied with a photoplastic method. The domestic polycarbonate was used as a simulation material. The full-field strain distribution for planar swaging deformation was obtained. The average error of the calculated strain was less than 7 percent. The deformation area and the effect of friction on deformation area were studied with the characteristics of photoplasticity. This paper points out the special features of planar swaging deformation and the effect of lubrication on deformation flow.

  7. Theory of non-planar orbits

    SciTech Connect

    Antillon, A.; Month, M.

    1985-01-01

    The basic dynamics of a planar accelerator is extended to the non-planar case. This is done using the geometrical concept of torsion and extending the Hamiltonian formalism. A generalized non-planar reference orbit is adopted which introduces torsion in appropriately chosen drift spaces. The parameters of the reference orbit are associated with uncoupled and coupled betatron parameters currently in use. 6 refs.

  8. Planar Schottky technology for submillimeter wavelengths

    NASA Technical Reports Server (NTRS)

    Crowe, Thomas W.; Bishop, William L.; Hesler, Jeffrey L.; Marazita, Steven M.; Koh, Philip J.; Porterfield, David W.

    1996-01-01

    Work carried out in relation to the development of planar integrated Schottky diodes with the aim of increasing the sensitivity, reliability and efficiency of spaceborne heterodyne receivers, is reported. The results of this work include a planar diode mixer at 585 GHz with a total receiver noise temperature of 2,380 K double side band, and planar diode multipliers. The prospects for further integration of circuit elements with the GaAs diodes are discussed.

  9. Giant magnetocaloric effect in GdAlO3 and a comparative study with GdMnO3

    NASA Astrophysics Data System (ADS)

    Mahana, Sudipta; Manju, U.; Topwal, D.

    2017-01-01

    The magnetic properties and magnetocaloric effect of polycrystalline GdAlO3 and GdMnO3 have been investigated to assess their potential usage as magnetic refrigerants at cryogenic temperatures. These compounds undergo antiferromagnetic transitions at low temperatures which are associated with the giant magnetic entropy change effect (-\\bigtriangleup {{S}M} )  ˜40.9 J Kg · K-1 under a field change of 0-9 T for GdAlO3 while the moderate effect of 18 J Kg · K-1 is observed for polycrystalline GdMnO3. Though the relative cooling power of both the stated materials is similar however, the absence of magnetic and thermal hysteresis makes GdAlO3 a more efficient magnetic refrigerant than GdMnO3.

  10. Effect of Al2Gd on microstructure and properties of laser clad Mg-Al-Gd coatings

    NASA Astrophysics Data System (ADS)

    Chen, Hong; Zhang, Ke; Yao, Chengwu; Dong, Jie; Li, Zhuguo; Emmelmann, Claus

    2015-03-01

    In order to investigate the effects of Gd addition on the microstructures and properties of magnesium coatings, the Mg-7.5Al-xGd (x = 0, 2.5, 5.0 and 7.5 wt.%) coatings on cast magnesium alloy were fabricated by laser cladding with wire feeding. The results indicated that the gadolinium (Gd) addition led to the formation of a cubic Al2Gd phase as well as suppressed the precipitation of eutectic Mg17Al12 phase. The laser clad coating containing nominally 7.5 wt.% Gd presented the highest microhardness, ultimate tensile strength and yield strength at both room temperature and high temperatures. The enhancement of heat resistant capacities was chiefly attributed to the existence of thermally stable Al2Gd particles, which prevented tiny liquation of eutectic phases along the grain boundaries and made great contributions on maintaining high yield ratio during high-temperature deformation.

  11. Hybrid Si nanocones/PEDOT:PSS solar cell

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Wang, Jianxiong; Rusli, ᅟ

    2015-04-01

    Periodic silicon nanocones (SiNCs) with different periodicities are fabricated by dry etching of a Si substrate patterned using monolayer polystyrene (PS) nanospheres as a mask. Hybrid Si/PEDOT:PSS solar cells based on the SiNCs are then fabricated and characterized in terms of their optical, electrical, and photovoltaic properties. The optical properties of the SiNCs are also investigated using theoretical simulation based on the finite element method. The SiNCs reveal excellent light trapping ability as compared to a planar Si substrate. It is found that the power conversion efficiency (PCE) of the hybrid cells decreases with increasing periodicity of the SiNCs. The highest PCE of 7.1% is achieved for the SiNC hybrid cell with a 400-nm periodicity, due to the strong light trapping near the peak of the solar spectrum and better current collection efficiency.

  12. Graded-index planar waveguide solar concentrator.

    PubMed

    Bouchard, Sébastien; Thibault, Simon

    2014-03-01

    Planar waveguides are useful to transport, concentrate and distribute light uniformly over large dimensions. Their capacity to collect and gather light efficiently over a large distance is interesting for many applications, like backlighting and solar concentration. For these reasons, the possibility of making them even more efficient could be of considerable interest for the community. The observation of the ray path inside a graded-index (GRIN) fiber inspired the development of a similar technology inside planar waveguides. In this Letter, we show that it has the potential to dramatically increase the efficiency of planar waveguide-based solar concentrators or backlighting using GRIN planar waveguides.

  13. Planarization of metal films for multilevel interconnects

    SciTech Connect

    Tuckerman, David B.

    1987-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  14. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, David B.

    1989-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  15. A near-optimum parallel planarization algorithm.

    PubMed

    Takefuji, Y; Lee, K C

    1989-09-15

    A near-optimum parallel planarization algorithm is presented. The planarization algorithm, which is designed to embed a graph on a plane, uses a large number of simple processing elements called neurons. The proposed system, composed of an N x N neural network array (where N is the number of vertices), not only generates a near-maximal planar subgraph from a nonplanar graph or a planar graph but also embeds the subgraph on a single plane within 0(1) time. The algorithm can be used in multiple-layer problems such as designing printed circuit boards and routing very-large-scale integration circuits.

  16. Planar Hall effect bridge magnetic field sensors

    SciTech Connect

    Henriksen, A. D.; Dalslet, B. T.; Skieller, D. H.; Lee, K. H.; Okkels, F.; Hansen, M. F.

    2010-07-05

    Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can be significantly enhanced by a geometric factor. For the samples in the present study, we demonstrate an enhancement of the sensor output by a factor of about 100 compared to cross-shaped sensors. The presented construction opens a new design and application area of the planar Hall effect, which we term planar Hall effect bridge sensors.

  17. Planarized fiber-FHD optical composite

    NASA Astrophysics Data System (ADS)

    Holmes, C.; Carpenter, L. G.; Gates, J. C.; Gawith, C. B. E.; Smith, P. G. R.

    2015-03-01

    We demonstrate the fabrication of a mechanically robust planarised fibre-FHD optical composite. Fabrication is achieved through deposition and consolidation of optical grade silica soot on to both an optical fibre and planar substrate. The consolidated silica acts in joining the fibre and planar substrate both mechanically and optically. The concept lends itself to applications where long interaction lengths (order of tens of centimetres) and optical interaction via a planar waveguide are required, such as pump schemes, precision layup of fibre optics and hybrid fibre-planar devices. This paper considers the developments in fabrication process that enable component development.

  18. Helical axis stellarator with noninterlocking planar coils

    DOEpatents

    Reiman, Allan; Boozer, Allen H.

    1987-01-01

    A helical axis stellarator using only noninterlocking planar, non-circular coils, generates magnetic fields having a magnetic well and large rotational transform with resultant large equilibrium beta.

  19. The simulation model of planar electrochemical transducer

    NASA Astrophysics Data System (ADS)

    Zhevnenko, D. A.; Vergeles, S. S.; Krishtop, T. V.; Tereshonok, D. V.; Gornev, E. S.; Krishtop, V. G.

    2016-12-01

    Planar electrochemical systems are very perspective to build modern motion and pressure sensors. Planar microelectronic technology is successfully used for electrochemical transducer of motion parameters. These systems are characterized by an exceptionally high sensitivity towards mechanic exposure due to high rate of conversion of the mechanic signal to electric current. In this work, we have developed a mathematical model of this planar electrochemical system, which detects the mechanical signals. We simulate the processes of mass and charge transfer in planar electrochemical transducer and calculated its transfer function with different geometrical parameters of the system.

  20. Planar waveguide sensor of ammonia

    NASA Astrophysics Data System (ADS)

    Rogoziński, Roman; Tyszkiewicz, Cuma; Karasiński, Paweł; Izydorczyk, Weronika

    2015-12-01

    The paper presents the concept of forming ammonia sensor based on a planar waveguide structure. It is an amplitude sensor produced on the basis of the multimode waveguide. The technological base for this kind of structure is the ion exchange method and the sol-gel method. The planar multimode waveguide of channel type is produced in glass substrate (soda-lime glass of Menzel-Glaser company) by the selective Ag+↔Na+ ion exchange. On the surface of the glass substrate a porous (~40%) silica layer is produced by the sol-gel method. This layer is sensitized to the presence of ammonia in the surrounding atmosphere by impregnation with Bromocresol Purple (BCP) dye. Therefore it constitutes a sensor layer. Spectrophotometric tests carried out showed about 50% reduction of cross-transmission changes of such sensor layer for a wave λ=593 nm caused by the presence of 25% ammonia water vapor in its ambience. The radiation source used in this type of sensor structure is a light emitting diode LED. The gradient channel waveguide is designed for frontal connection (optical glue) with a standard multimode telecommunications waveguide 62.5/125μm.

  1. Multi-Aperture Shower Design for the Improvement of the Transverse Uniformity of MOCVD-Derived GdYBCO Films.

    PubMed

    Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Zhang, Fei; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2017-09-15

    A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO₃/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y₂O₃-buffered Hastelloy tapes. The GdYBCO films were prepared by the metal organic chemical vapor deposition (MOCVD) process. The transverse uniformities of structure, morphology, thickness, and performance were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), step profiler, and the standard four-probe method using the criteria of 1 μV/cm, respectively. Through adopting the multi-aperture shower instead of the slit shower, measurement by step profiler revealed that the thickness difference between the middle and the edges based on the slit shower design was well eliminated. Characterization by SEM showed that a GdYBCO film with a smooth surface was successfully prepared. Moreover, the transport critical current density (Jc) of its middle and edge positions at 77 K and self-field were found to be over 5 MA/cm² through adopting the micro-bridge four-probe method.

  2. Multi-Aperture Shower Design for the Improvement of the Transverse Uniformity of MOCVD-Derived GdYBCO Films

    PubMed Central

    Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Zhang, Fei; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2017-01-01

    A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO3/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes. The GdYBCO films were prepared by the metal organic chemical vapor deposition (MOCVD) process. The transverse uniformities of structure, morphology, thickness, and performance were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), step profiler, and the standard four-probe method using the criteria of 1 μV/cm, respectively. Through adopting the multi-aperture shower instead of the slit shower, measurement by step profiler revealed that the thickness difference between the middle and the edges based on the slit shower design was well eliminated. Characterization by SEM showed that a GdYBCO film with a smooth surface was successfully prepared. Moreover, the transport critical current density (Jc) of its middle and edge positions at 77 K and self-field were found to be over 5 MA/cm2 through adopting the micro-bridge four-probe method. PMID:28914793

  3. Atomic transition probabilities of Gd i

    NASA Astrophysics Data System (ADS)

    Lawler, J. E.; Bilty, K. A.; Den Hartog, E. A.

    2011-05-01

    Fourier transform spectra are used to determine emission branching fractions for 1290 lines of the first spectrum of gadolinium (Gd i). These branching fractions are converted to absolute atomic transition probabilities using previously reported radiative lifetimes from time-resolved laser-induced-fluorescence measurements (Den Hartog et al 2011 J. Phys. B: At. Mol. Opt. Phys. 44 055001). The wavelength range of the data set is from 300 to 1850 nm. A least squares technique for separating blends of the first and second spectra lines is also described and demonstrated in this work.

  4. Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology.

    PubMed

    Chang, Wen Hsin; Lee, Chih Hsun; Chang, Yao Chung; Chang, Pen; Huang, Mao Lin; Lee, Yi Jun; Hsu, Chia-Hung; Hong, J Minghuang; Tsai, Chiung Chi; Kwo, J Raynien; Hong, Minghwei

    2009-12-28

    Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Ferromagnetism at room temperature of c- and m-plane GaN : Gd films grown on different substrates by reactive molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ranchal, R.; Yadav, B. S.; Trampert, A.

    2013-02-01

    We report the magnetic properties of c- and m-plane GaN : Gd films grown on different substrate materials. Additionally, we have investigated the magnetic behaviour of the bare substrates in order to analyse their possible contribution on the properties of this material system. For the growth of c-phase GaN : Gd we have used 6H-SiC(0 0 0 1) and GaN/Al2O3 templates. Whereas templates only exhibit a diamagnetic behaviour, the SiC substrates show clear signatures of ferromagnetism at room temperature. Rutherford backscattering spectroscopy and secondary ions mass spectrometry have revealed traces of Fe in the SiC substrates. This Fe contamination seems to be related to the ferromagnetic ordering observed in these substrates. LiAlO2(0 0 1) is a good choice for growth of m-plane diluted nitrides due to its diamagnetic behaviour. The hysteresis loops of c- and m-phase GaN : Gd deposited on template and LiAlO2, respectively, show coercivity and magnetic saturation. These characteristics together with the magnetization curves are indications of an intrinsic ferromagnetic behaviour in the GaN : Gd.

  6. A facile synthesis approach and impact of shell formation on morphological structure and luminescent properties of aqueous dispersible NaGdF4:Yb/Er upconversion nanorods

    NASA Astrophysics Data System (ADS)

    Ansari, Anees A.; Yadav, Ranvijay; Rai, S. B.

    2016-12-01

    A general facile synthesis approach was used for fabrication of highly emissive aqueous dispersible hexagonal phase upconversion luminescent NaGdF4:Yb/Er nanorods (core NRs) through metal complex decomposition process. An inert NaGdF4 and porous silica layers were grafted surrounding the surface of each and every NRs to enhance their luminescence efficiency and colloidal dispersibility in aqueous environment. Optical properties in terms of band gap energy of core, core/shell, and silica-coated core/shell/SiO2 nanorods were observed to investigate the influence of surface coating, which was gradually decreased after surface coating because of increase crystalline size after growth of inert and silica shells. The inert shell formation before silica surface grafting, upconversion luminescence intensity was greatly improved by about 20 times, owing to the effective surface passivation of the seed core and, therefore, protection of Er3+ ion in the core from the nonradiative decay caused by surface defects. Moreover, after silica coating, core/shell nanorods shows strong upconversion luminescence property similar to the hexagonal upconversion core NRs. It is expected that these NaGdF4:Yb/Er@NaGdF4@SiO2 (core/shell/SiO2) NRs including highly upconversion emissive and aqueous dispersible properties make them an ideal materials for various photonic-based potential applications such as in upconversion luminescent bioimaging, magnetic resonance imaging, and photodynamic therapy.

  7. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    SciTech Connect

    Wang, Ziwei; Xiao, Lei; Liang, Renrong E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing E-mail: liangrr@tsinghua.edu.cn

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  8. Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices

    NASA Astrophysics Data System (ADS)

    Meng, Lingkuan; Hong, Peizhen; He, Xiaobin; Li, Chunlong; Li, Junjie; Li, Junfeng; Zhao, Chao; Wei, Yayi; Yan, Jiang

    2016-01-01

    In this work, we investigated the challenges encountered in 14 nm node Finfet gate patterning. The patterning process was originated from a 22 nm planar device, in which a SiO2/Si3N4/SiO2 (ONO) multilayer was used as an etch mask. To accommodate with the 3D nature of Finfet structures in 14 nm node, the thickness of Si3N4 has been increased in the investigated process. We found out that the standard ONO mask etch process was no longer effective for gate patterning in 3D Finfet devices. It was observed that the etched mask sidewall was significantly more tapered than that in planar devices, resulting in the final CDs of both mask and dummy gate far wider than those of the planar devices. In order to achieve a desirable gate CD, the formation mechanism causing a severely tapered mask profile was first investigated. Our results suggested that redeposition effect of the etch products on the sidewall played a significant role in controlling etched mask sidewall angle. Then, we proposed a two-step etch process which can improve the anisotropy of ONO mask etch and obtain a steep etch profile with a desirable CD. Using this process, a gate CD of 20 nm was successfully achieved with a desirable profile and a smooth sidewall. Our results have demonstrated that the newly developed etch process is very robust and has a wide process window.

  9. The preparation of high-J c Gd0.5Y0.5Ba2Cu3O7-δ thin films by the MOCVD process

    NASA Astrophysics Data System (ADS)

    Zhao, R. P.; Zhang, F.; Liu, Q.; Xia, Y. D.; Lu, Y. M.; Cai, C. B.; Tao, B. W.; Li, Y. R.

    2016-06-01

    A home-designed metal organic chemical vapor deposition (MOCVD) system has been employed to prepare high critical current density (J c) Gd0.5Y0.5Ba2Cu3O7-δ (GdYBCO) thin films on LaMnO3/epitaxial MgO/ion beam assisted deposition (IBAD)-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes; the thin films were directly heated by the Joule effect after applying an heating current (I h ) through the Hastelloy tapes. The effect of the mole ratio of the metal organic sources has been systematically investigated. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses indicated that the GdYBCO films crystallized better and became denser with the increasing of the Cu/Ba ratio from 1.0 to 1.1, yielding a J c at 77 K and 0 T of 200 nm GdYBCO film increasing from 2.5 MA cm-2 to 7 MA cm-2. In addition, SEM and energy dispersive spectrometer (EDS) characterizations revealed that more and more outgrowths appeared and the density of the film was reduced with an increase in the Cu/Ba ratio from 1.1 to 1.2. When the I h was 26.8 A and the mole ratio of Gd(tmhd)3, Y(tmhd)3, Ba(tmhd)2 and Cu(tmhd)2 in the precursor was 0.55:0.55:2:2.2, the critical current (I c) of the deposited 200 nm-thick GdYBCO film reached a 140 A cm-1 width (77 K, 0 T), corresponding to the J c 7 MA cm-2 (77 K, 0 T).

  10. Structural investigation of the new Ca3Ln2Ge3O12 (Ln=Pr, Nd, Sm, Gd and Dy) compounds and luminescence spectroscopy of Ca3Gd2Ge3O12 doped with the Eu3+ ion

    NASA Astrophysics Data System (ADS)

    Piccinelli, F.; Lausi, A.; Bettinelli, M.

    2013-09-01

    The crystal structures of new rare earth-based germanate compounds (Ca3Pr2Ge3O12, Ca3Nd2Ge3O12, Ca3Sm2Ge3O12, Ca3Gd2Ge3O12 and Ca3Dy2Ge3O12) have been determined by Rietveld refinement calculations on the collected synchrotron X-ray diffraction powder patterns. A different distribution of the rare earth ions in the three available crystal sites was observed, as the main structural feature. The reasons of the instability of the silico-carnotite structure for lanthanide ions out of the range Pr-Dy have been proposed. Finally, the luminescence spectroscopy of the Eu3+ dopant ion in Ca3Gd2Ge3O12 was presented and analyzed taking into account the observed structural characteristics. The Eu3+ luminescence spectroscopy was also compared with the one of Eu3+ doped Ca3Gd2Si3O12 and Ca3Lu2Si3O12 isostructural materials.

  11. Anion-templated assembly and magnetocaloric properties of a nanoscale {Gd38} cage versus a {Gd48} barrel.

    PubMed

    Guo, Fu-Sheng; Chen, Yan-Cong; Mao, Ling-Ling; Lin, Wei-Quan; Leng, Ji-Dong; Tarasenko, Róbert; Orendáč, Martin; Prokleška, Jan; Sechovský, Vladimír; Tong, Ming-Liang

    2013-10-25

    The comprehensive study reported herein provides compelling evidence that anion templates are the main driving force in the formation of two novel nanoscale lanthanide hydroxide clusters, {Gd38(ClO4)6} (1) and {Gd48Cl2(NO3)} (2), characterized by single-crystal X-ray crystallography, infrared spectroscopy, and magnetic measurements. {Gd38(ClO4)6}, encapsulating six ClO4(-) ions, features a cage core composed of twelve vertex-sharing {Gd4} tetrahedrons and one Gd⋅⋅⋅Gd pillar. When Cl(-) and NO3(-) were incorporated in the reaction instead of ClO4(-), {Gd48Cl2(NO3)} is obtained with a barrel shape constituted by twelve vertex-sharing {Gd4} tetrahedrons and six {Gd5} pyramids. What is more, the cage-like {Gd38} can be dynamically converted into the barrel-shaped {Gd48} upon Cl(-) and NO3(-) stimulus. To our knowledge, it is the first time that the linear M-O-M' fashion and the unique μ8-ClO4(-) mode have been crystallized in pure lanthanide complex, and complex 2 represents the largest gadolinium cluster. Both of the complexes display large magnetocaloric effect in units of J kg(-1) K(-1) and mJ cm(-3) K(-1) on account of the weak antiferromagnetic exchange, the high N(Gd)/M(W) ratio (magnetic density), and the relatively compact crystal lattice (mass density). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Effect of Gd3+ on the colloidal stability of liposomes.

    PubMed

    Sabín, Juan; Prieto, Gerardo; Sennato, Simona; Ruso, Juan M; Angelini, Roberta; Bordi, Federico; Sarmiento, Félix

    2006-09-01

    Lanthanide ions such as La3+ and Gd3+ are well known to have large effects on the structure of phospholipid membranes. Unilamellar vesicles of dipalmitoylphosphatidylcholine (DPPC) were prepared by sonication method and confirmed by transmission electron microscopy. The effects of concentration of gadolinium ions Gd3+ on DPPC unilamellar vesicles in aqueous media were studied by different techniques. As physical techniques, photon correlation spectroscopy, electrophoretic mobility, and differential scanning calorimetry were used. The theoretical predictions of the colloidal stability of liposomes were followed using the Derjaguin-Landau-Verwey-Overbeek theory. Changes in the size of liposomes and high polydispersities values were observed as Gd3+ concentration increases, suggesting that this cation induces the aggregation of vesicles. Electrophoretic mobility measurements on unilamellar vesicles as a function of Gd3+ ion concentration show that the vesicles adsorb Gd3+ ions. Above Gd3+ concentrations of 0.1 mol dm-3, the zeta potential and light scattering measurements indicate the beginning of aggregation process. For comparison with similar phospholipids, the zeta potential of phosphatidylcholine interacting with Gd3+ was measured, showing an analogous behavior. Differential scanning calorimetry has been used to determine the effect of Gd3+ on the transition temperature (Tc) and on the enthalpy (DeltaHc) associated with the process.

  13. Electronic transitions in GdN band structure

    SciTech Connect

    Vidyasagar, R. Kita, T.; Sakurai, T.; Ohta, H.

    2014-05-28

    Using the near-infrared (NIR) absorbance spectroscopy, electronic transitions and spin polarization of the GdN epitaxial film have been investigated; and the GdN epitaxial film was grown by a reactive rf sputtering technique. The GdN film exhibited three broad bands in the NIR frequency regimes; and those bands are attributable primarily to the minority and majority spin transitions at the X-point and an indirect transition along the Γ-X symmetric direction of GdN Brillouin zone. We experimentally observe a pronounced red-shift of the indirect band gap when cooling down below the Curie temperature which is ascribed to the orbital-dependent coulomb interactions of Gd-5dxy electrons, which tend to push-up the N-2p bands. On the other hand, we have evaluated the spin polarization of 0.17 (±0.005), which indicates that the GdN epitaxial film has almost 100% spin-polarized carriers. Furthermore, the experimental result of GdN electronic transitions are consistent with the previous reports and are thus well-reproduced. The Arrott plots evidenced that the Curie temperature of GdN film is 36 K and the large spin moment is explained by the nitrogen vacancies and the intra-atomic exchange interaction.

  14. A topologically unique alternating {CoGd} magnetocaloric ring.

    PubMed

    Ojea, María José Heras; Lorusso, Giulia; Craig, Gavin A; Wilson, Claire; Evangelisti, Marco; Murrie, Mark

    2017-04-13

    The adiabatic temperature change of the star-shaped {CoGd} magnetocaloric ring is enhanced via topological control over the assembly process, by using a pre-formed {Co(II)(H6L)} building block that undergoes oxidation to Co(III), successfully separating the Gd(III) ions.

  15. Ten inch Planar Optic Display

    SciTech Connect

    Beiser, L.; Veligdan, J.

    1996-04-01

    A Planar Optic Display (POD) is being built and tested for suitability as a high brightness replacement for the cathode ray tube, (CRT). The POD display technology utilizes a laminated optical waveguide structure which allows a projection type of display to be constructed in a thin (I to 2 inch) housing. Inherent in the optical waveguide is a black cladding matrix which gives the display a black appearance leading to very high contrast. A Digital Micromirror Device, (DMD) from Texas Instruments is used to create video images in conjunction with a 100 milliwatt green solid state laser. An anamorphic optical system is used to inject light into the POD to form a stigmatic image. In addition to the design of the POD screen, we discuss: image formation, image projection, and optical design constraints.

  16. The simplicity of planar networks.

    PubMed

    Viana, Matheus P; Strano, Emanuele; Bordin, Patricia; Barthelemy, Marc

    2013-12-13

    Shortest paths are not always simple. In planar networks, they can be very different from those with the smallest number of turns--the simplest paths. The statistical comparison of the lengths of the shortest and simplest paths provides a non trivial and non local information about the spatial organization of these graphs. We define the simplicity index as the average ratio of these lengths and the simplicity profile characterizes the simplicity at different scales. We measure these metrics on artificial (roads, highways, railways) and natural networks (leaves, slime mould, insect wings) and show that there are fundamental differences in the organization of urban and biological systems, related to their function, navigation or distribution: straight lines are organized hierarchically in biological cases, and have random lengths and locations in urban systems. In the case of time evolving networks, the simplicity is able to reveal important structural changes during their evolution.

  17. The simplicity of planar networks

    PubMed Central

    Viana, Matheus P.; Strano, Emanuele; Bordin, Patricia; Barthelemy, Marc

    2013-01-01

    Shortest paths are not always simple. In planar networks, they can be very different from those with the smallest number of turns - the simplest paths. The statistical comparison of the lengths of the shortest and simplest paths provides a non trivial and non local information about the spatial organization of these graphs. We define the simplicity index as the average ratio of these lengths and the simplicity profile characterizes the simplicity at different scales. We measure these metrics on artificial (roads, highways, railways) and natural networks (leaves, slime mould, insect wings) and show that there are fundamental differences in the organization of urban and biological systems, related to their function, navigation or distribution: straight lines are organized hierarchically in biological cases, and have random lengths and locations in urban systems. In the case of time evolving networks, the simplicity is able to reveal important structural changes during their evolution. PMID:24336510

  18. The simplicity of planar networks

    NASA Astrophysics Data System (ADS)

    Viana, Matheus P.; Strano, Emanuele; Bordin, Patricia; Barthelemy, Marc

    2013-12-01

    Shortest paths are not always simple. In planar networks, they can be very different from those with the smallest number of turns - the simplest paths. The statistical comparison of the lengths of the shortest and simplest paths provides a non trivial and non local information about the spatial organization of these graphs. We define the simplicity index as the average ratio of these lengths and the simplicity profile characterizes the simplicity at different scales. We measure these metrics on artificial (roads, highways, railways) and natural networks (leaves, slime mould, insect wings) and show that there are fundamental differences in the organization of urban and biological systems, related to their function, navigation or distribution: straight lines are organized hierarchically in biological cases, and have random lengths and locations in urban systems. In the case of time evolving networks, the simplicity is able to reveal important structural changes during their evolution.

  19. Adjustable phase planar helical undulator

    NASA Astrophysics Data System (ADS)

    Carr, Roger G.; Lidia, Steve

    1993-11-01

    We present here the design description of a new type of planar helical undulator, which we are constructing for the SPEAR storage ring at the Stanford Synchrotron Radiation Laboratory. It comprises four rows of pure permanent magnet blocks, one row in each quadrant about the axis defined by the electron beam. Rows may be translated longitudinally with respect to each other to change the helicity of the magnetic field they create at the position of the beam. They may also be translated longitudinally to vary the energy of the x-rays emitted, unlike designs where this function is performed by varying the gap between the rows. This work includes numerical calculations of the fields, electron trajectories, and x-ray spectra, including off-axis effects.

  20. The planar parabolic optical antenna.

    PubMed

    Schoen, David T; Coenen, Toon; García de Abajo, F Javier; Brongersma, Mark L; Polman, Albert

    2013-01-09

    One of the simplest and most common structures used for directing light in macroscale applications is the parabolic reflector. Parabolic reflectors are ubiquitous in many technologies, from satellite dishes to hand-held flashlights. Today, there is a growing interest in the use of ultracompact metallic structures for manipulating light on the wavelength scale. Significant progress has been made in scaling radiowave antennas to the nanoscale for operation in the visible range, but similar scaling of parabolic reflectors employing ray-optics concepts has not yet been accomplished because of the difficulty in fabricating nanoscale three-dimensional surfaces. Here, we demonstrate that plasmon physics can be employed to realize a resonant elliptical cavity functioning as an essentially planar nanometallic structure that serves as a broadband unidirectional parabolic antenna at optical frequencies.

  1. Planar cell polarity in Drosophila

    PubMed Central

    Maung, Saw Myat Thanda W

    2011-01-01

    In all multicellular organisms, epithelial cells are not only polarized along the apical-basal axis, but also within the epithelial plane, giving cells a sense of direction. Planar cell polarity (PCP) signaling regulates establishment of polarity within the plane of an epithelium. The outcomes of PCP signaling are diverse and include the determination of cell fates, the generation of asymmetric but highly aligned structures, such as the stereocilia in the human inner ear or the hairs on a fly wing, or the directional migration of cells during convergence and extension during vertebrate gastrulation. In humans, aberrant PCP signaling can result in severe developmental defects, such as open neural tubes (spina bifida), and can cause cystic kidneys. In this review, we discuss the basic mechanism and more recent findings of PCP signaling focusing on Drosophila melanogaster, the model organism in which most key PCP components were initially identified. PMID:21983142

  2. Peculiarities of neutron waveguides with thin Gd layer

    NASA Astrophysics Data System (ADS)

    Khaydukov, Yu; Kravtsov, E.; Progliado, V.; Ustinov, V.; Nikitenko, Yu; Keller, T.; Aksenov, V.; Keimer, B.

    2016-09-01

    Peculiarities of the formation of a neutron enhanced standing wave in the structure with a thin highly absorbing layer of gadolinium are considered in the article. An analogue of the poisoning effect well known in reactor physics was found. The effect is stronger for the Nb/Gd/Nb system. Despite of this effect, for a Nb/Gd bilayer and a Nb/Gd/Nb trilayer placed between Al2O3 substrate and Cu layer, it is shown theoretically and experimentally that one order of magnitude enhancement of neutron density is possible in the vicinity of the Gd layer. This enhancement makes it possible to study domain formation in the Gd layer under transition of the Nb layer(s) into the superconducting state (cryptoferromagnetic phase).

  3. Complex magnetic behavior in GdCrO3

    NASA Astrophysics Data System (ADS)

    Mahana, Sudipta; Manju, U.; Topwal, D.

    2017-05-01

    Magnetic interactions in Gadolinium orthochromites (GdCrO3) are quite complex. It shows strong temperature dependency related to Gd3+-Gd3+, Gd3+-Cr3+ and Cr3+-Cr3+ interactions, resulting in exotic phenomena like spin flipping and spin reorientation. These behaviors are successfully explained by considering Cr 3d-Gd 4f magnetic coupling. The nearest neighbor symmetric and antisymmetric exchange coupling in Cr-sublattice was found to be Je = 11.058 K and D = 2.64 K from modified Curie-Weiss law modeled by Moriya, while positive Zeeman energy between net moments and the applied external magnetic fields was found to drive spin flipping.

  4. Anti-GD2 Strategy in the Treatment of Neuroblastoma

    PubMed Central

    Yang, Richard K.; Sondel, Paul M.

    2010-01-01

    The prognosis for advanced neuroblastoma remains poor with high risk of recurrence after consolidation. Therapies based on monoclonal antibodies that specifically target disialoganglioside GD2 on tumor cells are improving treatment results for high-risk neuroblastoma. This article reviews the use of anti-GD2 antibodies either as monotherapy or as part of a larger and more complex treatment approach for advanced neuroblastoma. We review how anti-GD2 antibodies can be combined with other treatments or strategies to enhance their clinical effects. Tumor resistance and other problems that decrease the efficacy of anti-GD2 antibodies are discussed. Future developments in the area of anti-GD2 immunotherapies for neuroblastoma are also addressed. PMID:21037966

  5. Design, synthesis and characterization of a Pt-Gd metal-organic framework containing potentially catalytically active sites.

    PubMed

    Szeto, Kai C; Kongshaug, Kjell Ove; Jakobsen, Søren; Tilset, Mats; Lillerud, Karl Petter

    2008-04-21

    The heterobimetallic metal-organic framework {[(BPDC)PtCl(2)](3)(Gd(H(2)O)(3))(2)}.5H(2)O (BPDC = 2,2'-bipyridine-5,5'-dicarboxylate) has been designed and synthesized by hydrothermal methods. The new coordination polymer contains subunits of (BPDC)PtCl(2) (1) where both N atoms of the BPDC ligand are attached to a square-planar Pt(II) center. The two remaining cis coordination sites at Pt(II) are occupied by chloride ions. The final structure (2) of the polymeric network is obtained when Gd(III) ions link together the (BPDC)PtCl(2) units, which are organized in sheets, into larger blocks. These blocks are stacked along the crystallographic [010] direction and are held together by a hydrogen bonding scheme that involves carboxylate oxygen atoms and water molecules in the coordination sphere of Gd. The coordination polymer 2 can be obtained in a single-step reaction or in a two-step synthesis where the corresponding Pt complex (1) was first synthesized followed by reacting 1 with Gd(NO(3))(3).6H(2)O. In situ high temperature powder X-ray diffraction shows that the crystalline coordination polymer transforms into an anhydrous modification at 100 degrees C. This modification is stable to 350 degrees C, at which temperature the structure starts to decompose. The coordination sphere around platinum in the polymer closely resembles organometallic Pt complexes that have been previously found to catalytically or stoichiometrically activate and functionalize hydrocarbon C-H bonds in homogeneous systems.

  6. Synthesis and characterization of Gd-doped magnetite nanoparticles

    SciTech Connect

    Zhang, Honghu; Malik, Vikash; Mallapragada, Surya; Akinc, Mufit

    2016-10-04

    There has been rising interest in the synthesis of magnetite nanoparticles due to their importance in biomedical and technological applications. Tunable magnetic properties of magnetite nanoparticles to meet specific requirements will greatly expand the spectrum of applications. Tremendous efforts have been devoted to studying and controlling the size, shape and magnetic properties of magnetite nanoparticles. We investigate gadolinium (Gd) doping to influence the growth process as well as magnetic properties of magnetite nanocrystals via a simple co-precipitation method under mild conditions in aqueous media. Gd doping was found to affect the growth process leading to synthesis of controllable particle sizes under the conditions tested (0–10 at% Gd3+). Typically, undoped and 5 at% Gd-doped magnetite nanoparticles were found to have crystal sizes of about 18 and 44 nm, respectively, supported by X-ray diffraction and transmission electron microscopy. These results showed that Gd-doped nanoparticles retained the magnetite crystal structure, with Gd3+ randomly incorporated in the crystal lattice, probably in the octahedral sites. The composition of 5 at% Gd-doped magnetite was Fe(3-x)GdxO4 (x=0.085±0.002), as determined by inductively coupled plasma mass spectrometry. 5 at% Gd-doped nanoparticles exhibited ferrimagnetic properties with small coercivity (~65 Oe) and slightly decreased magnetization at 260 K in contrast to the undoped, superparamagnetic magnetite nanoparticles. Templation by the bacterial biomineralization protein Mms6 did not appear to affect the growth of the Gd-doped magnetite particles synthesized by this method.

  7. Thermochemical investigations in the system Cd–Gd

    PubMed Central

    Reichmann, Thomas L.; Ganesan, Rajesh; Ipser, Herbert

    2014-01-01

    Vapour pressure measurements were performed in terms of a non-isothermal isopiestic method to determine vapour pressures of Cd in the system Cd–Gd between 693 and 1045 K. From these results thermodynamic activities of Cd were derived as a function of temperature for the composition range 52–86 at.% Cd. By employing an adapted Gibbs–Helmholtz equation, partial molar enthalpies of mixing of Cd were obtained for the corresponding composition range, which were used to convert the activity values of Cd to a common average sample temperature of 773 K. The relatively large variation of the activity across the homogeneity ranges of the phases Cd2Gd and Cd45Gd11 indicates that they probably belong to the most stable intermetallic compounds in this system. An activity value of Gd for the two phase field Cd6Gd+L was available from literature and served as an integration constant for a Gibbs–Duhem integration. Integral Gibbs energies are presented between 51 and 100 at.% Cd at 773 K, referred to Cd(l) and α-Gd(s) as standard states. Gibbs energies of formation for the exact stoichiometric compositions of the phases Cd58Gd13, Cd45Gd11, Cd3Gd and Cd2Gd were obtained at 773 K as about −19.9, −21.1, −24.8, and −30.0 kJ g atom−1, respectively. PMID:25328283

  8. Thermochemical investigations in the system Cd-Gd.

    PubMed

    Reichmann, Thomas L; Ganesan, Rajesh; Ipser, Herbert

    2014-10-15

    Vapour pressure measurements were performed in terms of a non-isothermal isopiestic method to determine vapour pressures of Cd in the system Cd-Gd between 693 and 1045 K. From these results thermodynamic activities of Cd were derived as a function of temperature for the composition range 52-86 at.% Cd. By employing an adapted Gibbs-Helmholtz equation, partial molar enthalpies of mixing of Cd were obtained for the corresponding composition range, which were used to convert the activity values of Cd to a common average sample temperature of 773 K. The relatively large variation of the activity across the homogeneity ranges of the phases Cd2Gd and Cd45Gd11 indicates that they probably belong to the most stable intermetallic compounds in this system. An activity value of Gd for the two phase field Cd6Gd+L was available from literature and served as an integration constant for a Gibbs-Duhem integration. Integral Gibbs energies are presented between 51 and 100 at.% Cd at 773 K, referred to Cd(l) and α-Gd(s) as standard states. Gibbs energies of formation for the exact stoichiometric compositions of the phases Cd58Gd13, Cd45Gd11, Cd3Gd and Cd2Gd were obtained at 773 K as about -19.9, -21.1, -24.8, and -30.0 kJ g atom-(1), respectively.

  9. Crystal structure, magnetic properties, and the magnetocaloric effect of Gd5Rh4 and GdRh

    NASA Astrophysics Data System (ADS)

    Wang, C. L.; Zou, J. D.; Liu, J.; Mudryk, Y.; Gschneidner, K. A.; Long, Y.; Smetana, V.; Miller, G. J.; Pecharsky, V. K.

    2013-05-01

    The crystal structures of Gd5Rh4 and GdRh have been studied by powder and single crystal x-ray diffraction. The results show that Gd5Rh4 is isotypic with Pu5Rh4 and the bond length of the short Rh-Rh dimer is 2.943(4) Å. According to heat capacity measurements in zero magnetic field, the magnetic ordering temperature of Gd5Rh4 is 13 K, in agreement with magnetization measurements. Both the heat capacity peak shape and the positive slope of the Arrott plots at Curie temperature (TC) indicate the second-order nature of the magnetic transition. The temperature dependence of magnetization of Gd5Rh4 measured in 1 kOe applied field indicates noncollinear magnetic ordering that may change into nearly collinear ferromagnetic ordering by increasing the magnetic field. GdRh is ferromagnetic below TC = 22 K. Moderate magnetocaloric effects and relatively high refrigerant capacities are observed in Gd5Rh4 and GdRh.

  10. SI Notes.

    ERIC Educational Resources Information Center

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  11. Polysilicon planarization and plug recess etching in a decoupled plasma source chamber using two endpoint techniques

    NASA Astrophysics Data System (ADS)

    Kaplita, George A.; Schmitz, Stefan; Ranade, Rajiv; Mathad, Gangadhara S.

    1999-09-01

    The planarization and recessing of polysilicon to form a plug are processes of increasing importance in silicon IC fabrication. While this technology has been developed and applied to DRAM technology using Trench Storage Capacitors, the need for such processes in other IC applications (i.e. polysilicon studs) has increased. Both planarization and recess processes usually have stringent requirements on etch rate, recess uniformity, and selectivity to underlying films. Additionally, both processes generally must be isotropic, yet must not expand any seams that might be present in the polysilicon fill. These processes should also be insensitive to changes in exposed silicon area (pattern factor) on the wafer. A SF6 plasma process in a polysilicon DPS (Decoupled Plasma Source) reactor has demonstrated the capability of achieving the above process requirements for both planarization and recess etch. The SF6 process in the decoupled plasma source reactor exhibited less sensitivity to pattern factor than in other types of reactors. Control of these planarization and recess processes requires two endpoint systems to work sequentially in the same recipe: one for monitoring the endpoint when blanket polysilicon (100% Si loading) is being planarized and one for monitoring the recess depth while the plug is being recessed (less than 10% Si loading). The planarization process employs an optical emission endpoint system (OES). An interferometric endpoint system (IEP), capable of monitoring lateral interference, is used for determining the recess depth. The ability of using either or both systems is required to make these plug processes manufacturable. Measuring the recess depth resulting from the recess process can be difficult, costly and time- consuming. An Atomic Force Microscope (AFM) can greatly alleviate these problems and can serve as a critical tool in the development of recess processes.

  12. Advanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

    NASA Astrophysics Data System (ADS)

    Pavunny, S. P.; Misra, P.; Scott, J. F.; Katiyar, R. S.

    2013-06-01

    Planar metal-insulator-metal (MIM) mono-dielectric layer stacks were fabricated using pulsed laser deposited thin films of high-k dielectric LaGdO3. These stacks showed high capacitance density ˜43.5 fF/μm2 with sub-nanometer capacitance equivalent thicknesses of ˜0.66 nm, large breakdown field of ˜6 MV/cm, greater energy storage density of ˜40 J/cm3, smaller voltage coefficient of capacitance, and lower dependence of it on layer thickness α ∝ d-1 and frequency. All these features make LaGdO3 a material of interest for next generation MIM structures for radio frequency, analog/mixed-signal, and dynamic random access memory applications.

  13. Carbide clusterfullerene Gd2C2@C92 vs dimetallofullerene Gd2@C94: a quantum chemical survey.

    PubMed

    Guo, Yi-Jun; Yang, Tao; Nagase, Shigeru; Zhao, Xiang

    2014-02-17

    The geometric, electronic structure, and thermodynamic stability of Gd2C94 species, including dimetallofullerenes Gd2@C94 and carbide clusterfullerenes Gd2C2@C92, have been systematically investigated by a density functional theory approach combined with statistical mechanics calculations. Although the Gd2@C2(153480)-C94 is determined to possess the lowest energy, its molar fraction at the temperature region of fullerene formation is extremely low if the temperature effect is taken into consideration. Meanwhile, three C92-based carbide clusterfullerene species, Gd2C2@D3(126408)-C92, Gd2C2@C1(126390)-C92, and Gd2C2@C2(126387)-C92, with some higher energy are exposed to possess considerable thermodynamic stabilities within a related temperature interval, suggesting that carbide clusterfullerenes rather than dimetallofullerenes could be isolated experimentally. Although one isomer, Gd2C2@D3(126408)-C92, has been indeed obtained experimentally, a novel structure, Gd2C2@C1(126390)-C92, behaving as the most abundant isomer at more elevated temperatures with the largest SOMO-LUMO gap, is predicted for the first time to be another proper isomer isolated in the experiment. Moreover, in order to further analyze the interaction between gadolinium atoms and carbon atoms in either a carbide cluster or a fullerene cage, frontier molecular orbital, natural bond orbital, and Mayer bond order analyses have been employed, and the results show that the covalent interaction cannot be neglected. The IR spectra of Gd2C2@C92 have been simulated to provide some valuable guidance for future experiments.

  14. Planar Hall effect in Y{sub 3}Fe{sub 5}O{sub 12}/IrMn films

    SciTech Connect

    Zhang, X. Zou, L. K.

    2014-12-29

    The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y{sub 3}Fe{sub 5}O{sub 12}) was measured in the magnetic field rotating in the film plane. The magnetic field angular dependence of planar Hall resistance (PHR) was observed in YIG/IrMn bilayer at different temperatures, while the Gd{sub 3}Ga{sub 5}O{sub 12}/IrMn film shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by ferrimagnetic layer in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn film at 10 K, indicative of the irreversible switching of IrMn interfacial spins at low temperature.

  15. Room-temperature near-infrared high-Q perovskite whispering-gallery planar nanolasers.

    PubMed

    Zhang, Qing; Ha, Son Tung; Liu, Xinfeng; Sum, Tze Chien; Xiong, Qihua

    2014-10-08

    Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true integration of optoelectronic circuitry. Although significant progress has been made in III-V nanowire lasers with achieving NIR lasing at room temperature, challenges remain including low quantum efficiencies and high Auger losses. Importantly, the obstacles toward integrating one-dimensional nanowires on the planar ubiquitous Si platform need to be effectively tackled. Here we demonstrate a new family of planar room-temperature NIR nanolasers based on organic-inorganic perovskite CH3NH3PbI(3-a)X(a) (X = I, Br, Cl) nanoplatelets. Their large exciton binding energies, long diffusion lengths, and naturally formed high-quality planar whispering-gallery mode cavities ensure adequate gain and efficient optical feedback for low-threshold optically pumped in-plane lasing. We show that these remarkable wavelength tunable whispering-gallery nanolasers can be easily integrated onto conductive platforms (Si, Au, indium tin oxide, and so forth). Our findings open up a new class of wavelength tunable planar nanomaterials potentially suitable for on-chip integration.

  16. Novel planar field emission of ultra-thin individual carbon nanotubes.

    PubMed

    Song, Xuefeng; Gao, Jingyun; Fu, Qiang; Xu, Jun; Zhao, Qing; Yu, Dapeng

    2009-10-07

    In this work, we proposed and realized a new prototype of planar field emission device based on as-grown individual carbon nanotubes (CNTs) on the surface of a Si-SiO2 substrate. The anode, cathode and the CNT tip all lie on the same surface, so the electron emission is reduced from three-dimensional to two-dimensional. The benefits of such a design include usage of thinner CNT emitters, integrity with planar technology, stable construction, better heat dissipation, etc. A tip-to-tip field emission device was presented besides the tip-to-electrode one. Real-time, in situ observation of the planar field emission was realized in a scanning electron microscope (SEM). Measurements showed that the minimum voltage for 10 nA field emission current was only 8.0 V and the maximum emission current density in an individual CNT emitter (1.0 nm in diameter) exceeded 5.7 x 10(8) A cm(-2). These results stand out in the comparison with recent works on individual CNT field emission, indicating that the planar devices based on ultra-thin individual CNTs are more competitive candidates for next-generation electron field emitters.

  17. Muon probing in optimal and under- doped GdBCO

    NASA Astrophysics Data System (ADS)

    Boekema, C.; Sio, H.; Browne, M. C.

    2011-03-01

    By means of MaxEnt-Burg, transverse-field (TF) μ SR data of underdoped (δ 1 Tc = 81 K) and optimal doped (δ 0 Tc = 93 K) GdBa 2 Cu 3 O7 - δ (GdBCO) are analyzed. Site search studies for RBCO generated plausible candidates for muon sites called the Balmer and Lin sites. We wish to confirm the muon-probe sites in GdBCO.~One of the two Balmer sites and the Lin site are located near O vacancies. These two sites become unstable in underdoped GdBCO(δ 1). Positive muons are repelled by the positive O vacancies. This repulsion effects would be more pronounced as temperature increases.~ At 120 K, three signals are present in GdBCO(δ 1), while at roomtemperature (RT), only one dominant signal remains. In contrast, three signals occur at 120 K and RT for GdBCO(δ 0), which has much less O vacancies.~ These results support earlier studies of muon-O sites.~Thus, the muons probe away from the Cu O2 plane, allowing μ SR to detect magnetic fields originating from potential loop currents in these planes. By ME- μ SR analysis, the Balmer & Lin sites in GdBCO are confirmed. Research supported by NSF-REU.

  18. Limit Cycles of Planar Quadratic Differential Equations,

    DTIC Science & Technology

    1982-05-01

    A120 71g LIMIT CYCLES OF PLANAR QUADRATIC DIFFERENTIAL EQUATIONS i/i (U) VALE UNIV NEW~ HAVEN CT CENTER FOR SYSTEMS SCIENCE D E KODITSCHE( ET AL...MICROCOPY RESOLUTION TEST CHART ""OftAI IIMEA OF WSTMAIhSIItg0s3a NATIONA BUREAU OF -TANDtMAROga / - -w w w ~ S S S S S S S S LIMIT CYCLES OF PLANAR...pubta rolb=% DW*5UMato UnlIhd ... a.. . . . . . . . . .......- .lu uo . ,aK Limit Cycles of Planar Quadratic Differential Equations D. E. Koditschek

  19. Spray characterization using planar laser imaging

    NASA Technical Reports Server (NTRS)

    Pal, S.; Lee, W.; Santoro, R. J.; Ryan, H. M.

    1991-01-01

    Results on the application of a planar polarization ratio technique to spray and soot particle measurements are presented and compared with the phase Doppler particle analyzer (PDPA) measurements. With the assumption of a logarithmic normal distribution, reasonable agreement between the two techniques were obtained, demonstrating the capability of the planar polarization ratio technique to differentiate regions containing soot particles from those containing droplets. A comparison of quantitative measurement capabilities of the two techniques showed that the planar polarization ratio technique can be applied to complicated combustion environments for at least semiquantitative investigation of sprays.

  20. Spray characterization using planar laser imaging

    NASA Astrophysics Data System (ADS)

    Pal, S.; Lee, W.; Santoro, R. J.; Ryan, H. M.

    1991-09-01

    Results on the application of a planar polarization ratio technique to spray and soot particle measurements are presented and compared with the phase Doppler particle analyzer (PDPA) measurements. With the assumption of a logarithmic normal distribution, reasonable agreement between the two techniques were obtained, demonstrating the capability of the planar polarization ratio technique to differentiate regions containing soot particles from those containing droplets. A comparison of quantitative measurement capabilities of the two techniques showed that the planar polarization ratio technique can be applied to complicated combustion environments for at least semiquantitative investigation of sprays.

  1. Piezo Voltage Controlled Planar Hall Effect Devices.

    PubMed

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  2. Piezo Voltage Controlled Planar Hall Effect Devices

    NASA Astrophysics Data System (ADS)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  3. Global asymptotic stabilisation for switched planar systems

    NASA Astrophysics Data System (ADS)

    Zhang, Junfeng; Han, Zhengzhi; Huang, Jun

    2015-04-01

    This paper studies the stabilisation problem of a class of switched planar systems. The present method is different from the existing one designing directly controllers for the underlying systems. The controllers are constructed through two steps. Firstly, by means of the backstepping approach, homogeneous controllers stabilising the nominal systems are obtained. Secondly, the controllers stabilising the planar subsystems are attained by modifying the obtained homogeneous controllers. The controllers depend on perturbations of the switched systems. Finally, by using the multiple Lyapunov functions approach, a sufficient condition of the stabilisation for switched planar systems is given. The conclusions are extended to multiple dimensional switched systems. An illustrative example verifies the validity of the design.

  4. Synthesis and characterization of Gd-doped magnetite nanoparticles

    DOE PAGES

    Zhang, Honghu; Iowa State Univ., Ames, IA; Malik, Vikash; ...

    2016-10-04

    There has been rising interest in the synthesis of magnetite nanoparticles due to their importance in biomedical and technological applications. Tunable magnetic properties of magnetite nanoparticles to meet specific requirements will greatly expand the spectrum of applications. Tremendous efforts have been devoted to studying and controlling the size, shape and magnetic properties of magnetite nanoparticles. We investigate gadolinium (Gd) doping to influence the growth process as well as magnetic properties of magnetite nanocrystals via a simple co-precipitation method under mild conditions in aqueous media. Gd doping was found to affect the growth process leading to synthesis of controllable particle sizesmore » under the conditions tested (0–10 at% Gd3+). Typically, undoped and 5 at% Gd-doped magnetite nanoparticles were found to have crystal sizes of about 18 and 44 nm, respectively, supported by X-ray diffraction and transmission electron microscopy. These results showed that Gd-doped nanoparticles retained the magnetite crystal structure, with Gd3+ randomly incorporated in the crystal lattice, probably in the octahedral sites. The composition of 5 at% Gd-doped magnetite was Fe(3-x)GdxO4 (x=0.085±0.002), as determined by inductively coupled plasma mass spectrometry. 5 at% Gd-doped nanoparticles exhibited ferrimagnetic properties with small coercivity (~65 Oe) and slightly decreased magnetization at 260 K in contrast to the undoped, superparamagnetic magnetite nanoparticles. Templation by the bacterial biomineralization protein Mms6 did not appear to affect the growth of the Gd-doped magnetite particles synthesized by this method.« less

  5. Synthesis and characterization of Gd-doped magnetite nanoparticles

    NASA Astrophysics Data System (ADS)

    Zhang, Honghu; Malik, Vikash; Mallapragada, Surya; Akinc, Mufit

    2017-02-01

    Synthesis of magnetite nanoparticles has attracted increasing interest due to their importance in biomedical and technological applications. Tunable magnetic properties of magnetite nanoparticles to meet specific requirements will greatly expand the spectrum of applications. Tremendous efforts have been devoted to studying and controlling the size, shape and magnetic properties of magnetite nanoparticles. Here we investigate gadolinium (Gd) doping to influence the growth process as well as magnetic properties of magnetite nanocrystals via a simple co-precipitation method under mild conditions in aqueous media. Gd doping was found to affect the growth process leading to synthesis of controllable particle sizes under the conditions tested (0-10 at% Gd3+). Typically, undoped and 5 at% Gd-doped magnetite nanoparticles were found to have crystal sizes of about 18 and 44 nm, respectively, supported by X-ray diffraction and transmission electron microscopy. Our results showed that Gd-doped nanoparticles retained the magnetite crystal structure, with Gd3+ randomly incorporated in the crystal lattice, probably in the octahedral sites. The composition of 5 at% Gd-doped magnetite was Fe(3-x)GdxO4 (x=0.085±0.002), as determined by inductively coupled plasma mass spectrometry. 5 at% Gd-doped nanoparticles exhibited ferrimagnetic properties with small coercivity ( 65 Oe) and slightly decreased magnetization at 260 K in contrast to the undoped, superparamagnetic magnetite nanoparticles. Templation by the bacterial biomineralization protein Mms6 did not appear to affect the growth of the Gd-doped magnetite particles synthesized by this method.

  6. Planar doped barrier subharmonic mixers

    NASA Technical Reports Server (NTRS)

    Lee, T. H.; East, J. R.; Haddad, G. I.

    1992-01-01

    The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

  7. Process technologies of MPACVD planar waveguide devices and fiber attachment

    NASA Astrophysics Data System (ADS)

    Li, Cheng-Chung; Qian, Fan; Boudreau, Robert A.; Rowlette, John R., Sr.; Bowen, Terry P.

    1999-03-01

    Optical circuits based on low-loss glass waveguide on silicon are a practical and promising approach to integrate different functional components. Fiber attachment to planar waveguide provides a practical application for optical communications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. Microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer is thus deposited with a compatible high growth rate (i.e. 0.4 - 0.5 micrometer/min). Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The resultant refractive index can be varied between 1.46 (i.e. pure silica) and 1.60 (i.e. pure germania). Waveguides can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on a mask layer. The core layer is removed by plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma (ICP) etch. Etch rates of 3000 - 4000 angstrom/min have been achieved using ICP compared to typical etch rates of 200 - 300 angstrom/min using conventional RIE. Planar waveguides offer good mode matching to optical fiber. A polished fiber end can be glued to the end facet of waveguide with a very low optical coupling loss. In addition, anisotropic etching of silicon V- grooves provides a passive alignment capability. Epoxy and solder were used to fix the fiber within the guiding groove. Several designs of waveguide-fiber attachment will be discussed.

  8. Influence of planar oscillations on scattered ion energy distributions in transmission ion channeling

    NASA Astrophysics Data System (ADS)

    Bailes, A. A.; Seiberling, L. E.

    1999-06-01

    Utilizing the transmission ion channeling technique and a Monte Carlo simulation of the channeling of He ions in Si, we have been able to determine surface structure by comparing experimental to simulated scattered ion energy distributions. In analyzing data for {110} beam incidence, we have found that planar oscillations persist well past 2000 Å in our Monte Carlo simulations. These oscillations yield no benefit to this method of data analysis but can make analysis more difficult by the requirement for more accurate Si thickness determination.

  9. Hydrogenation induced structure and property changes in GdGa

    NASA Astrophysics Data System (ADS)

    Nedumkandathil, Reji; Kranak, Verina F.; Johansson, Robert; Ångström, Jonas; Balmes, Oliver; Andersson, Mikael S.; Nordblad, Per; Scheicher, Ralph H.; Sahlberg, Martin; Häussermann, Ulrich

    2016-07-01

    Hydrides GdGaHx were obtained by exposing the Zintl phase GdGa with the CrB structure to a hydrogen atmosphere at pressures from 1.5 to 50 bar and temperatures from 50 to 500 °C. Structural analysis by powder X-ray diffraction suggests that conditions with hydrogen pressures in a range between 15 and 50 bar and temperatures below 500 °C afford a uniform hydride phase with the NdGaH1.66 structure (Cmcm, a=3.9867(7) Å, b=12.024(2) Å, c=4.1009(6) Å) which hosts H in two distinct positions, H1 and H2. H1 is coordinated in a tetrahedral fashion by Gd atoms, whereas H2 atoms are inserted between Ga atoms. The assignment of the NdGaH1.66 structure is corroborated by first principles DFT calculations. Modeling of phase and structure stability as a function of composition resulted in excellent agreement with experimental lattice parameters when x=1.66 and revealed the presence of five-atom moieties Ga-H2-Ga-H2-Ga in GdGaH1.66. From in situ powder X-ray diffraction using synchrotron radiation it was established that hydrogenation at temperatures above 200 °C affords a hydride with x≈1.3, which is stable up to 500 °C, and that additional H absorption, yielding GdGaH1.66, takes place at lower temperatures. Consequently, GdGaH1.66 desorbs H above T=200 °C. Without the presence of hydrogen, hydrides GdGaHx decompose at temperatures above 300 °C into GdH2 and an unidentified Gd-Ga intermetallics. Thus the hydrogenation of GdGa is not reversible. From magnetic measurements the Curie-Weiss constant and effective magnetic moment of GdGaH1.66 were obtained. The former indicates antiferromagnetic interactions, the latter attains a value of 8 μB which is typical for compounds containing Gd3+ions.

  10. Electron microscopy of a Gd-Ba-Cu-O superconductor

    NASA Technical Reports Server (NTRS)

    Ramesh, R.; Thomas, G.; Meng, R. L.; Hor, P. H.; Chu, C. W.

    1989-01-01

    An electron microscopy study has been carried out to characterize the microstructure of a sintered Gd-Ba-Cu-O superconductor alloy. The GdBa2Cu3O(7-x) phase in the oxygen annealed sample is orthorhombic, while in the vacuum annealed sample it is tetragonal. It is shown that the details of the fine structure in the 001-line zone axis convergent beam patterns can be used to distinguish between the orthorhombic form and the tetragonal form. In addition to this matrix phase, an amorphous phase is frequently observed at the triple grain junctions. Gd-rich inclusions have been observed inside the matrix phase.

  11. Electron microscopy of a Gd-Ba-Cu-O superconductor

    NASA Technical Reports Server (NTRS)

    Ramesh, R.; Thomas, G.; Meng, R. L.; Hor, P. H.; Chu, C. W.

    1989-01-01

    An electron microscopy study has been carried out to characterize the microstructure of a sintered Gd-Ba-Cu-O superconductor alloy. The GdBa2Cu3O(7-x) phase in the oxygen annealed sample is orthorhombic, while in the vacuum annealed sample it is tetragonal. It is shown that the details of the fine structure in the 001-line zone axis convergent beam patterns can be used to distinguish between the orthorhombic form and the tetragonal form. In addition to this matrix phase, an amorphous phase is frequently observed at the triple grain junctions. Gd-rich inclusions have been observed inside the matrix phase.

  12. Magnetic behavior of Gd4Co3 metallic glass

    NASA Astrophysics Data System (ADS)

    Zhang, Ji Liang; Zheng, Zhi Gang; Cao, Wen Huan; Shek, Chan Hung

    2013-01-01

    Metallic glass was successfully fabricated of the Gd4Co3 intermetallic composition. Analysis of the magnetization-temperature data showed that the moment per Gd atom was larger than its theoretical value and indicated the contribution from the Co moment. The maximum magnetic entropy change of glassy Gd4Co3 was determined as -7.2 J kg-1 K-1 at 50 kOe and -3.8 J kg-1 K-1 at 20 kOe, which are both much larger than those of its crystalline state.

  13. New orthorhombic derivative of CaCu{sub 5}-type structure: RNi{sub 4}Si compounds (R=Y, La, Ce, Sm, Gd–Ho), crystal structure and some magnetic properties

    SciTech Connect

    Morozkin, A.V.; Knotko, A.V.; Yapaskurt, V.O.; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.

    2013-12-15

    The crystal structure of new YNi{sub 4}Si-type RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds has been established using powder X-ray diffraction. The YNi{sub 4}Si structure is a new structure type, which is orthorhombic derivative of CaCu{sub 5}-type structure (space group Cmmm N 65, oC12). GdNi{sub 4}Si and DyNi{sub 4}Si compounds order ferromagnetically at 25 and 19 K, respectively whereas YNi{sub 4}Si shows antiferromagnetic nature. At 15 K, DyNi{sub 4}Si shows second antiferromagnetic-like transition. The magnetic moment of GdNi{sub 4}Si at 5 K in 50 kOe field is ∼7.2 μ{sub B}/f.u. suggesting a completely ordered ferromagnetic state. The magnetocaloric effect of GdNi{sub 4}Si is calculated in terms of isothermal magnetic entropy change and it reaches the maximum value of −12.8 J/kg K for a field change of 50 kOe near T{sub C} ∼25 K. - Graphical abstract: The RNi{sub 4}Si (R=Y, La, Ce, Sm, Gd–Ho) compounds crystallize in new YNi{sub 4}Si-type structure which is orthorhombic derivative of the basic CaCu{sub 5}-type structure. GdNi{sub 4}Si and DyNi{sub 4}Si compounds show the ferromagnetic-like ordering, whereas.YNi{sub 4}Si has the antiferromagnetic nature. The GdNi{sub 4}Si demonstrates the big magnetocaloric effect near temperature of ferromagnetic ordering. The relationship between initial CaCu{sub 5}-type DyNi{sub 5} and YNi{sub 4}Si-type DyNi{sub 4}Si lattices.

  14. Planar electrical-substitution carbon nanotube cryogenic radiometer

    NASA Astrophysics Data System (ADS)

    Tomlin, N. A.; White, M.; Vayshenker, I.; Woods, S. I.; Lehman, J. H.

    2015-04-01

    We have developed a fully-lithographic electrical-substitution planar bolometric-radiometer (PBR) that employs multiwall vertically-aligned carbon nanotubes (VACNT) as the absorber and thermistor, micro-machined Si as the weak thermal link and thin-film Mo as the electrical heater. The near-unity absorption of the VACNT over a broad wavelength range permits a planar geometry, compatible with lithographic fabrication. We present performance results on a PBR with an absorption of 0.999 35 at 1550 nm, a thermal conductance of 456 µW K-1 at 4 K and a time constant (1/e) of 7.7 ms. A single measurement of approximately 100 µW optical power at 1550 nm achieved in less than 100 s yields an expanded uncertainty of 0.14% (k = 2). We also observe an elevated superconducting transition temperature of 3.884 K for the Mo heater, which opens the possibility of future devices incorporating more sensitive thermistors and superconducting thin-film wiring. Contribution of an agency of the US government; not subject to copyright

  15. Hydrogenation induced structure and property changes in GdGa

    SciTech Connect

    Nedumkandathil, Reji; Kranak, Verina F.; Johansson, Robert; Ångström, Jonas; Balmes, Oliver; Andersson, Mikael S.; Nordblad, Per; Scheicher, Ralph H.; Sahlberg, Martin; Häussermann, Ulrich

    2016-07-15

    Hydrides GdGaH{sub x} were obtained by exposing the Zintl phase GdGa with the CrB structure to a hydrogen atmosphere at pressures from 1.5 to 50 bar and temperatures from 50 to 500 °C. Structural analysis by powder X-ray diffraction suggests that conditions with hydrogen pressures in a range between 15 and 50 bar and temperatures below 500 °C afford a uniform hydride phase with the NdGaH{sub 1.66} structure (Cmcm, a=3.9867(7) Å, b=12.024(2) Å, c=4.1009(6) Å) which hosts H in two distinct positions, H1 and H2. H1 is coordinated in a tetrahedral fashion by Gd atoms, whereas H2 atoms are inserted between Ga atoms. The assignment of the NdGaH{sub 1.66} structure is corroborated by first principles DFT calculations. Modeling of phase and structure stability as a function of composition resulted in excellent agreement with experimental lattice parameters when x=1.66 and revealed the presence of five-atom moieties Ga-H2-Ga-H2-Ga in GdGaH{sub 1.66}. From in situ powder X-ray diffraction using synchrotron radiation it was established that hydrogenation at temperatures above 200 °C affords a hydride with x≈1.3, which is stable up to 500 °C, and that additional H absorption, yielding GdGaH{sub 1.66}, takes place at lower temperatures. Consequently, GdGaH{sub 1.66} desorbs H above T=200 °C. Without the presence of hydrogen, hydrides GdGaH{sub x} decompose at temperatures above 300 °C into GdH{sub 2} and an unidentified Gd-Ga intermetallics. Thus the hydrogenation of GdGa is not reversible. From magnetic measurements the Curie-Weiss constant and effective magnetic moment of GdGaH{sub 1.66} were obtained. The former indicates antiferromagnetic interactions, the latter attains a value of ~8 μ{sub B} which is typical for compounds containing Gd{sup 3+}ions. - Graphical abstract: Ferromagnetic GdGa absorbs hydrogen in two steps to yield antiferromagnetic GdGaH{sub 1.66}. Display Omitted - Highlights: • Elucidation of hydrogen uptake behavior of the rare earth gallide

  16. Planar prism spectrometer based on adiabatically connected waveguiding slabs

    NASA Astrophysics Data System (ADS)

    Civitci, F.; Hammer, M.; Hoekstra, H. J. W. M.

    2016-04-01

    The device principle of a prism-based on-chip spectrometer for TE polarization is introduced. The spectrometer exploits the modal dispersion in planar waveguides in a layout with slab regions having two different thicknesses of the guiding layer. The set-up uses parabolic mirrors, for the collimation of light of the input waveguide and focusing of the light to the receiver waveguides, which relies on total internal reflection at the interface between two such regions. These regions are connected adiabatically to prevent unwanted mode conversion and loss at the edges of the prism. The structure can be fabricated with two wet etching steps. The paper presents basic theory and a general approach for device optimization. The latter is illustrated with a numerical example assuming SiON technology.

  17. Measuring fluence of fast neutrons with planar silicon detectors

    NASA Astrophysics Data System (ADS)

    Zamyatin, N. I.; Cheremukhin, A. E.; Shafronovskaya, A. I.

    2017-09-01

    The results of measurements of 1-MeV (Si) equivalent fast neutron fluence with silicon planar detectors are reported. The measurement method is based on the linear dependence of the reverse detector current increment on the neutron fluence: ΔI = α I × Φ × V. This technique provides an opportunity to measure the equivalent fluence in a wide dynamic range from 108 to 1016 cm-2 with an unknown neutron energy spectrum and without detector calibration. The proposed method was used for monitoring in radiation resistance tests of different detector types at channel no. 3 of IBR-2 and for determining the fluence of fission and leakage neutrons at the KVINTA setup.

  18. Novel Planar and Integrated Microwave Antennas

    NASA Technical Reports Server (NTRS)

    Saed, Mohammad A.

    2000-01-01

    This project dealt with design, analysis, and testing of new types of planar and integrated antennas operating in the microwave frequency range. The following was accomplished during this project period:

  19. Forming a seal between planar sealing surfaces

    SciTech Connect

    Ezekoye, L.I.; Rusnica, E.J.; Sepp, H.A. Jr.

    1987-12-29

    A method of forming a seal between the confronting planar sealing surfaces on two annular structural members which are drawn together by axially extending bolts is described comprising the steps of: forming a seal assembly by locking a toroidal, crushable seal member within a substantially flat annular spacer member against an annular shoulder formed on the inner diameter thereof with an annular resilient member seated in a radially extending groove in the inner surface of the substantially flat annular member, the flat annular member being axially thinner than the toroidal, crushable seal member; placing the sealing assembly between the planar sealing surfaces and positively aligning the assembly relative to the axially extending bolts; and tightening the bolts to draw the planar sealing surfaces toward each other and into contact with the flat annular member while crushing the toroidal, crushable seal member to form a seal between the planar sealing surfaces.

  20. Planar cell polarity of the kidney.

    PubMed

    Schnell, Ulrike; Carroll, Thomas J

    2016-05-01

    Planar cell polarity (PCP) or tissue polarity refers to the polarization of tissues perpendicular to the apical-basal axis. Most epithelia, including the vertebrate kidney, show signs of planar polarity. In the kidney, defects in planar polarity are attributed to several disease states including multiple forms of cystic kidney disease. Indeed, planar cell polarity has been shown to be essential for several cellular processes that appear to be necessary for establishing and maintaining tubule diameter. However, uncovering the genetic mechanisms underlying PCP in the kidney has been complicated as the roles of many of the main players are not conserved in flies and vice versa. Here, we review a number of cellular and molecular processes that can affect PCP of the kidney with a particular emphasis on the mechanisms that do not appear to be conserved in flies or that are not part of canonical determinants.

  1. Non classical effects in planar waveguides

    NASA Technical Reports Server (NTRS)

    Bertolotti, M.; Jansky, J.; Perina, J.; Pernova, V.; Sibilia, C.

    1993-01-01

    The quantum description of light propagation inside a planar waveguide is given. In particular, the description describes the behavior of the field inside a directions coupler. Nonclassical effects are presented and discussed.

  2. Non-planar microfabricated gas chromatography column

    DOEpatents

    Lewis, Patrick R.; Wheeler, David R.

    2007-09-25

    A non-planar microfabricated gas chromatography column comprises a planar substrate having a plurality of through holes, a top lid and a bottom lid bonded to opposite surfaces of the planar substrate, and inlet and outlet ports for injection of a sample gas and elution of separated analytes. A plurality of such planar substrates can be aligned and stacked to provide a longer column length having a small footprint. Furthermore, two or more separate channels can enable multi-channel or multi-dimensional gas chromatography. The through holes preferably have a circular cross section and can be coated with a stationary phase material or packed with a porous packing material. Importantly, uniform stationary phase coatings can be obtained and band broadening can be minimized with the circular channels. A heating or cooling element can be disposed on at least one of the lids to enable temperature programming of the column.

  3. Shift multiplexing by planar waveguide referencing

    NASA Astrophysics Data System (ADS)

    Yi, Tao; Zhang, Jiasen; Yan, Lifen; Gong, Qihuang

    2005-09-01

    We present a new method with which to implement shift multiplexing by planar waveguide referencing. In this method, a planar waveguide is used to steer the reference beam, and we implement shift multiplexing by shifting the recording medium. A spatial selectivity as high as 1.1 μm is obtained. By using waveguide referencing we can make a compact and simple holographic system.

  4. Terahertz planar waveguide devices based on graphene

    NASA Astrophysics Data System (ADS)

    Yuan, Yizhe; Guo, Xiaoyong; An, Liqun; Xu, Wen

    2017-02-01

    We present a theoretical study on graphene-semiconductor planar structures. The frequency of the photonic modes in the structure, which can be efficiently tuned via varying the sample parameters, is within the terahertz (THz) bandwidth. Furthermore, it is found that a roughly linear dispersion relation can be obtained for photonic modes in the THz region. Hence, the proposed graphene-semiconductor planar structures can be served as THz waveguide with desirable transmission characteristics.

  5. Pfaffian Correlation Functions of Planar Dimer Covers

    NASA Astrophysics Data System (ADS)

    Aizenman, Michael; Valcázar, Manuel Laínz; Warzel, Simone

    2017-01-01

    The Pfaffian structure of the boundary monomer correlation functions in the dimer-covering planar graph models is rederived through a combinatorial/topological argument. These functions are then extended into a larger family of order-disorder correlation functions which are shown to exhibit Pfaffian structure throughout the bulk. Key tools involve combinatorial switching symmetries which are identified through the loop-gas representation of the double dimer model, and topological implications of planarity.

  6. Development of high reliability planar chip inductors

    SciTech Connect

    Swanson, H.W. Jr.

    1994-08-01

    A process for fabrication of multilayer planar chip inductors on ceramic wafers has been developed. This paper will summarize the progress made in the use of step-and-repeat print processes to fabricate a family of high reliability planar chip inductors for surface mount RF applications. Experimental data on thick-film gold and plated-copper windings are presented. In addition, the development of an automated RF probe station and waferized calibration standards are discussed.

  7. Magnetic properties of amorphous Si films doped with rare-earth elements

    NASA Astrophysics Data System (ADS)

    Sercheli, M. S.; Rettori, C.; Zanatta, A. R.

    2003-11-01

    Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by cosputtering and studied by means of electron-spin resonance (ESR) and dc magnetization. For comparison purposes the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rare-earth species are incorporated in the a-Si:RE films in the RE3+ form and that the RE doping depletes the neutral dangling bond (D0) density. The reduction of D0 density is significantly larger for the magnetic RE’s (Gd3+ and Er3+) than for the nonmagnetic ones (Y3+, La3+, Lu3+). These results are interpreted in terms of an exchangelike interaction Hint˜-JRE-DBSRESDB between the spin of the magnetic RE’s and that of the D0. All our Gd-doped Si films showed basically the same broad ESR Gd3+ resonance (ΔHpp≈850 Oe) at g≈2.01, suggesting the formation of a rather stable RE-Si complex in these films.

  8. Electron-optical systems for planar gyrotrons

    NASA Astrophysics Data System (ADS)

    Manuilov, V. N.; Zaslavsky, V. Yu.; Ginzburg, N. S.; Glyavin, M. Yu.; Kuftin, A. N.; Zotova, I. V.

    2014-02-01

    The methodology of designing an electron-optical system (EOS) that forms sheet helical electron beams (HEBs) for high-power gyrotrons is developed. As an example, we consider the EOS for a 140-GHz gyrotron operated at the first harmonic of the cyclotron frequency with an accelerating voltage of 50 kV, a beam current of 30 A, and a magnetic field compression of 36. A planar geometry of the magnetron-injection gun (MIG) is suggested. The adiabatic theory of MIGs modified for the planar geometry of EOS is used for preliminary estimations of MIG parameters. Numerical simulation of the HEB properties based on the CST STUDIO SUITE 3D code is performed to find the optimal configuration of a planar MIG. The accuracy of the calculated data is discussed. The main factors that affect the HEB quality are considered. It is shown that a sheet HEB with a pitch-factor of 1.3 and velocity spread not exceeding 25%-30% can be formed; this is quite acceptable for high-efficiency operation of modern gyrotrons. Calculation of the beam-wave interaction with the obtained HEB parameters proved that a high output power with a sufficiently good efficiency of about 20% can be reached. Simulations show the feasibility of the experimental implementation of a novel planar EOS and its use in short-wave planar gyrotrons. The developed technique can be used for the study and optimization of planar gyrotrons of different frequency bands and power levels.

  9. Microstructure and rolling capability of modified AZ31-Ce-Gd alloys

    SciTech Connect

    Li Wenping; Zhou Hong; Lin Pengyu; Zhao Shizhe

    2009-11-15

    AZ31-Ce-Gd alloys were studied and the influence of cerium (Ce) and gadolinium (Gd) on the microstructure and rolling capability of AZ31 alloy was investigated. The results indicated that the grains of AZ31 alloy were refined with Ce and Gd addition. Ce and Gd addition resulted in the formation of Al{sub 4}Ce, Al{sub 2}Gd and Mg{sub 3}Gd. After homogenization and rolling, the Al{sub 4}Ce, Al{sub 2}Gd and Mg{sub 3}Gd still existed. The rolling capability of AZ31 alloy was improved obviously with Ce and Gd addition. However, once Gd content increased to a certain value, the rolling capability of the modified alloy declined but still better than that of AZ31 alloy.

  10. Low temperature preparation and characterization of In 1- xLn xBO 3 ( x = 0.0 and 0.05; Ln = Gd, Eu, Dy and Sm): ESR of In 0.95Gd 0.05BO 3 and emission of In 0.95Eu 0.05BO 3

    NASA Astrophysics Data System (ADS)

    Velchuri, Radha; Vijaya Kumar, B.; Rama Devi, V.; Ravi Kumar, K.; Prasad, G.; Vithal, M.

    2009-10-01

    Indium borate and rare earth substituted indium borates (In 1- xLn xBO 3 ( x = 0.0 and 0.05; Ln = Gd, Eu, Dy and Sm)) are prepared at low temperature by metathesis reaction using InCl 3, LnCl 3 and NaBO 2. They are characterized by powder XRD and infrared spectroscopy. All the compositions (In 1- xLn xBO 3) crystallize in hexagonal lattice with calcite structure. These borates gave characteristic IR vibrations of planar BO 3 group. Spin-Hamiltonian parameters for Gd 3+ are deduced from room temperature electron spin resonance spectrum of In 0.95Gd 0.05BO 3. The electron spin resonance spectrum of In 0.95Gd 0.05BO 3 gave several anisotropic lines with g > 2.0. The ESR spectrum of the sample belongs to the "intermediate" category with 1/4 < HCF/ hν < 1. The local symmetry of Eu 3+ in In 0.95Eu 0.05BO 3 is obtained from its emission spectrum. The R/O ratio of In 0.95Eu 0.05BO 3 suggests the occupation of In 3+ site by Eu 3+ with near symmetric octahedral geometry.

  11. Analysis of the FUSE Spectrum of the Hot, Evolved Star GD 605

    NASA Astrophysics Data System (ADS)

    Fontaine, M.; Chayer, P.; Oliveira, C. M.; Wesemael, F.; Fontaine, G.

    2008-05-01

    We present an analysis of the atmospheric properties of the evolved, hydrogen-rich object GD 605 using FUSE, IUE, and optical spectra in conjunction with non-LTE (NLTE) model atmospheres and synthetic spectra. We also present an analysis of the interstellar medium along the line of sight toward this star. Our effective temperature determination relies on the constraints on the ionization balance O IV/O V imposed by the FUSE data, while the surface gravity relies on a match to the Balmer lines in the optical spectrum. Our analysis yields Teff ~ 85,000 K, log g ~ 5.25, and a helium abundance close to the solar value. These parameters suggest that GD 605 is in a post-AGB evolutionary phase and belongs to the class of hydrogen-rich central star of planetary nebulae, subclass O(H). Apart from lines of hydrogen and helium, about two dozen photospheric lines are observed in the FUSE data, which are dominated by the O VI λλ1031.9 and 1037.6 transitions. In addition, we detect lines associated with the following ions: N IV, O IV, O V, Si IV, S VI, Ar VII, as well as Fe VII. Synthetic spectra based on NLTE line-blanketed model atmospheres reproduce most of the line profiles observed in what appears to be an atmosphere deficient in heavy elements. Our calculations do not fully reproduce the strength of the strongest ultraviolet lines seen, the O VI doublet, perhaps a sign that some contribution to this structure may arise in the interstellar medium or in a circumstellar environment. We discuss various scenarios to account for the absence of a visible nebula and the dearth of heavy elements in the atmosphere of GD 605. Based on observations made with the NASA-CNES-CSA Far Ultraviolet Spectroscopic Explorer. FUSE is operated for NASA by Johns Hopkins University under NASA contract NAS5-32985.

  12. Electronic structure of Gd-doped MgO

    NASA Astrophysics Data System (ADS)

    Lukoyanov, A. V.; Anisimov, V. I.

    2016-02-01

    The electronic structure of Gd-doped MgO is investigated using the LSDA+U (local spin density approximation with U-correction) method and compared with the MgO structure. The total density of states obtained accounting for the correlation effects in the 4 f shell of gadolinium is found to be formed by the oxygen 2 p states at the valence band and the 4 f gadolinium occupied states, while the conduction band is represented by a mixture of empty electronic states. Magnetic properties of the calculated Gd-doped MgO are found to be formed solely by the Gd-4 f-magnetic moment of about 7μB, in good agreement with recent experimental results suggesting a ferromagnetic coupling of the local magnetic moments induced by Gd.

  13. Scissors mode of Gd nuclei studied from resonance neutron capture

    SciTech Connect

    Kroll, J.; Baramsai, B.; Becker, J. A.; and others

    2012-10-20

    Spectra of {gamma} rays following the neutron capture at isolated resonances of stable Gd nuclei were measured. The objectives were to get new information on photon strength of {sup 153,155-159}Gd with emphasis on the role of the M1 scissors-mode vibration. An analysis of the data obtained clearly indicates that the scissors mode is coupled not only to the ground state, but also to all excited levels of the nuclei studied. The specificity of our approach ensures unbiasedness in estimating the sumed scissors-mode strength {Sigma}B(M1){up_arrow}, even for odd product nuclei, for which conventional nuclear resonance fluorescence measurements yield only limited information. Our analysis indicates that for these nuclei the sum {Sigma}B(M1){up_arrow} increases with A and for {sup 157,159}Gd it is significantly higher compared to {sup 156,158}Gd.

  14. Gd3+ complex-modified NaLuF4-based upconversion nanophosphors for trimodality imaging of NIR-to-NIR upconversion luminescence, X-Ray computed tomography and magnetic resonance.

    PubMed

    Xia, Ao; Chen, Min; Gao, Yuan; Wu, Dongmei; Feng, Wei; Li, Fuyou

    2012-07-01

    Multimodality molecular imaging has recently attracted much attention, because it can take advantage of individual imaging modalities by fusing together information from several molecular imaging techniques. Herein, we report a multifunctional lanthanide-based nanoparticle for near-infrared to near-infrared (NIR-to-NIR) upconversion luminescence (UCL), X-ray computed tomography (CT) and T(1)-enhanced magnetic resonance (MR) trimodality in-vivo imaging. By careful selection of the lanthanide elements, core-shell structured lanthanide-based nanoparticles, NaLuF(4):Yb(3+),Tm(3+)@SiO(2)-GdDTPA nanoparticles (UCNP@SiO(2)-GdDTPA) have been designed and synthesized. We also prove that the application of UCNP@SiO(2)-GdDTPA for NIR-to-NIR UCL, CT and MRI multi-modality in-vivo imaging can be established successfully. In addition, the biological toxicity of UCNP@SiO(2)-GdDTPA is evaluated by the methyl thiazolyl tetrazolium (MTT) assay and histological analysis of viscera sections. Copyright © 2012 Elsevier Ltd. All rights reserved.

  15. Evaluation of hypothetical 153Gd source for use in brachytherapy☆

    PubMed Central

    Ghorbani, Mahdi; Behmadi, Marziyeh

    2016-01-01

    Aim The purpose of this work is to evaluate the dosimetric parameters of a hypothetical 153Gd source for use in brachytherapy and comparison of the dosimetric parameters with those of 192Ir and 125I sources. Materials and methods Dose rate constant, the radial dose function and the two dimensional (2D) anisotropy function data for the hypothetical 153Gd source were obtained by simulation of the source using MCNPX code and then were compared with the corresponding data reported by Enger et al. A comprehensive comparison between this hypothetical source and a 192Ir source with similar geometry and a 125I source was performed as well. Results Excellent agreement was shown between the results of the two studies. Dose rate constant values for the hypothetical 153Gd, 192Ir, 125I sources are 1.173 cGyh−1 U−1, 1.044 cGyh−1 U−1, 0.925 cGyh−1 U−1, respectively. Radial dose function for the hypothetical 153Gd source has an increasing trend, while 192Ir has more uniform and 125I has more rapidly falling off radial dose functions. 2D anisotropy functions for these three sources indicate that, except at 0.5 cm distance, 192Ir and 125I have more isotropic trends as compared to the 153Gd source. Conclusion A more uniform radial dose function, and 2D anisotropy functions with more isotropy, a much higher specific activity are advantages of 192Ir source over 153Gd. However, a longer half-life of 153Gd source compared to the other two sources, and lower energy of the source with respect to 192Ir are advantages of using 153Gd in brachytherapy versus 192Ir source. PMID:26900353

  16. Direct measurement of interlayer interaction in Permalloy/Gd nanodots

    NASA Astrophysics Data System (ADS)

    Lapa, Pavel; Ding, Junjia; Novosad, Valentine; Hoffmann, Axel

    2015-03-01

    Antiferromagnetic interaction at the interfaces of ferromagnetic transition metals(TM) and Gd is well known phenomenon. However, quantitative description of this interaction still lacks understanding. The main reason is that most experimental data were obtained by inspecting the hysteresis loops of TM/Gd multilayers. First, in plane domain structures of TM and Gd films complicates the description of the magnetization reversal process. Second, experimentally measured parameters are averaged over the domains obfuscating the microscopical picture. We make an effort to overcome these limitations by studying the magnetization reversal process of Permalloy/Gd nanodots. The dots were prepared by combination of optical lithography and magnetron sputtering. Experimentally it is observed that in these dots the antiferromagnetic interlayer interaction tunes magnetic vortex nucleation/annihilation fields. Rise of Gd magnetization at low temperature provides unusual temperature behavior of hysteresis loop. Micromagnetic models in which interlayer interaction energy acts as a fitting parameter is applied to simulate experimental hysteresis curves. The effect of nonmagnetic spacer between Permalloy and Gd is also considered and will be presented. This work was supported by the Department of Energy Office of Science, Materials Science and Engineering Division.

  17. Magnetic anisotropy and spin reorientation effects in Gd/Fe and Gd/(FeCo) multilayers for high density magneto-optical recording

    NASA Astrophysics Data System (ADS)

    Stavrou, E.; Sbiaa, R.; Suzuki, T.; Knappmann, S.; Röll, K.

    2000-05-01

    We have investigated the anisotropy behavior and temperature dependent changes of the magnetic anisotropy in Gd/Fe and Gd/(FeCo) multilayers. The spin reorientation effects are very important for the super resolution readout in new methods for high-density magneto-optical recording. Gd/(Fe, Co) multilayered films are a good alternative to the common Gd(Fe, Co) alloy films, because the magnetic anisotropy and also spin reorientation effects can be comfortably adjusted by varying the interface and volume anisotropy components and the composition using experimental parameters such as the periodicity λ=tGd+tTM [tGd,tTM: the sublayer thicknesses of the Gd and transition metal Fe, FeCo (TM)] and the ratio of the sublayer thicknesses tGd/tTM. We have found the mechanisms for spin reorientation, which are explained qualitatively with a new model.

  18. Growth and scintillation properties of 3 in. diameter Ce doped Gd3Ga3Al2O12 scintillation single crystal

    NASA Astrophysics Data System (ADS)

    Kamada, Kei; Shoji, Yasuhiro; Kochurikhin, Vladimir V.; Okumura, Satoshi; Yamamoto, Seiichi; Nagura, Aya; Yeom, Jung Yeol; Kurosawa, Shunsuke; Yokota, Yuui; Ohashi, Yuji; Nikl, Martin; Yoshikawa, Akira

    2016-10-01

    The 3 in. size Ce1%:Gd3Al2Ga3O12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3 mm×3 mm×3 mm size Ce:GAGG scintillator crystals was performed using Si-PMs.

  19. Microlasers autodoubleurs en Nd:GdCOB

    NASA Astrophysics Data System (ADS)

    Lucas-Leclin, G.; Lombard, L.; Balembois, F.; Georges, P.; Brun, A.; Marty, J.; Ferrand, B.; Calvat, C.; François, B.; Rolland, G.; Pelenc, D.; Aka, G.; Vivien, D.; Pacaud, O.; Maillart, J. M.

    2002-06-01

    Nous avons réalisé des microlasers pompés par diode à émission dans le visible, à partir d'un matériau autodoubleur (Nd:GdCOB) qui possède simultanément des propriétés laser et non linéaires. La fabrication de ces microlasers nécessite une orientation fine des faces des cristaux perpendiculairement à la direction d'accord de phase, avec une précision de t 0,1°. Des miroirs diéléctriques sont déposés sur chaque face. Cette technologie assure une fabrication collective de faible coût. En pompage par diode, une puissance de 21 mW à 530 nm a été atteinte pour une puissance de pompe incidente à 812 nm de 1,4 W. Pour une puissance de pompe réduite de 0,7 W, la puissance émise dans le vert atteint 3 mW, et le profil spatial reste monomode transverse. Ces résultats encourageants sont une nouvelle étape vers la réalisation de sources visibles compactes et bas coût.

  20. Particle- γ coincidence spectroscopy of the N = 90 nucleus 154Gd by (p,tγ)

    NASA Astrophysics Data System (ADS)

    Allmond, J. M.; Beausang, C. W.; Ross, T. J.; Humby, P.; Basunia, M. S.; Bernstein, L. A.; Bleuel, D. L.; Brooks, W.; Brown, N.; Burke, J. T.; Darakchieva, B. K.; Dudziak, K. R.; Evans, K. E.; Fallon, P.; Jeppesen, H. B.; LeBlanc, J. D.; Lesher, S. R.; McMahan, M. A.; Meyer, D. A.; Phair, L.; Rasmussen, J. O.; Scielzo, N. D.; Stroberg, S. R.; Wiedeking, M.

    2017-03-01

    A segmented Si-telescope and HPGe array, STARS-LIBERACE, was used to study the 156Gd(p,tγ)154Gd direct reaction by particle- γ coincidence spectroscopy. New cross sections with a 25MeV proton beam are reported and compared to previous (p,t) and (t,p) studies. Furthermore, additional evidence for coexisting K^{π}=01+,21+ and 02+, 22+ configurations at N = 90 is presented. Direct and indirect population patterns of the low-lying states are also explored. Review of the new and existing evidence favors an interpretation based on a configuration-dependent pairing interaction. The weakening of monopole pairing strength and an increase in quadrupole pairing strength could bring 2p-2h 0+ states below 2Δ. This may account for a large number of the low-lying 0+ states observed in two-nucleon transfer reactions. A hypothesis for the origin of the 02+ and 03+ states is provided.

  1. Visible-light driven Gd2Ti2O7/GdCrO3 composite for hydrogen evolution.

    PubMed

    Parida, K M; Nashim, Amtul; Mahanta, Saroj Ku

    2011-12-28

    A series of Gd(2)Ti(2)O(7)/GdCrO(3) composites are prepared by solid state combustion method using Gd(NO(3))(3), TiO(2), Cr(2)O(3) as metal source and urea as a fuel. The composites are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible diffuse reflectance spectra (DRUV-vis), Brunauer-Emmett-Teller (BET) surface area measurements, photoluminescence spectra (PL), X-ray photoelectron spectroscopic (XPS) studies, photocurrent measurements etc. The photocatalytic activity of the composites is examined towards hydrogen production without using any co-catalyst under visible light illumination. The rate of formation of hydrogen is measured by the photocatalytic activity measurement device and gas chromatography (GC). The highest efficiency is observed over the composite GTC (Cr:Gd:Ti = 1:1:1). On the basis of photocurrent measurements and PL, a mechanism for the enhanced photocatalytic activity has been discussed.

  2. The Exchange Coupling of Gd3+- and Cr3+-Ions in Paramagnetic GdCrO3 (In German)

    NASA Astrophysics Data System (ADS)

    Dräger, K.

    1986-03-01

    Polycrystalline samples of stoichiometric GdCrO3 have been investigated by ESR at 9.4 GHz. In the temperature range between 175 K and 520 K one broad absorption with a Lorentzian line shape and a g-factor of 2.024 has been observed. Attributing the absorption exclusively to the Gd -ion it can be shown that the temperature dependence of the ESR-intensity follows the predictions of a cluster-model. The energy describing the coupling of a single Gd3+-ion to the surrounding Cr3+-ions is found to be ΔE(Gd) = 170 cm-1. Taking advantage of the similarity within the orthochromites it is possible to determine at the same time the exchange - coupling of Cr3+-ions to their identical nearest neighbours as ΔE(Cr) = 293 cm-1. The relative strength of these couplings given by 0.60 is compatible with other experimental issues.

  3. Structural, morphological, optical, and magnetic properties of Gd-doped and (Gd, Mn) co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Poornaprakash, B.; Chalapathi, U.; Babu, S.; Park, Si-Hyun

    2017-09-01

    Undoped, Gd doped, and (Gd, Mn) co-doped ZnO nanoparticles were fabricated via a hydrothermal method and their structural, morphological, optical, and magnetic properties were examined. X-ray diffraction and Raman spectroscopy studies confirmed that the Gd and Mn ions successfully entered the ZnO hexagonal lattice as substitute ions without changing the internal structure of the lattice. Morphology studies revealed that the synthesized nanoparticles were monodisperse and closely hexagonal shaped. The reflectance spectra showed a red shift of the absorption edge in both doped and co-doped samples. The diamagnetic ZnO sample was altered into a ferromagnetic material when doped with Gd ions, but this behavior was suppressed when Mn ions were co-doped into the matrix.

  4. Integration of planar transformer and/or planar inductor with power switches in power converter

    DOEpatents

    Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

    2007-10-30

    A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

  5. Magnetic properties of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds

    SciTech Connect

    Morozkin, A.V.; Knotko, A.V.; Yapaskurt, V.O.; Yao, Jinlei; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.; Quezado, S.; Malik, S.K.

    2015-12-15

    Magnetic properties and magnetocaloric effect of CaCu{sub 5}-type RNi{sub 3}TSi (R=Gd and Tb, T=Mn, Fe, Co and Cu) compounds have been investigated. Magnetic measurements of RNi{sub 3}TSi display the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Graphical abstract: Magnetic measurements of RNi{sub 3}TSi show the increasing of Curie temperature and the decreasing of magnetocaloric effect and saturated magnetic moment in the row of 'RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi'. In contrast to GdNi{sub 3}{Mn, Fe, Co}Si, TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. The coercive field increases from TbNi{sub 4}Si (~0.5 kOe) to TbNi{sub 3}CoSi (4 kOe), TbNi{sub 3}MnSi (13 kOe) and TbNi{sub 3}FeSi (16 kOe) in field of 50 kOe at 5 K, whereas TbNi{sub 3}CuSi exhibits a negligible coercive field. - Highlights: • CaCu{sub 5}-type RNi{sub 3}TSi show ferromagnetic ordering (R=Gd, Tb, T=Mn–Co, Cu). • Curie point increases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • MCE decreases in ‘RNi{sub 3}CuSi–RNi{sub 3}NiSi–RNi{sub 3}CoSi–RNi{sub 3}MnSi–RNi{sub 3}FeSi’ row. • TbNi{sub 3}{Mn, Fe, Co}Si exhibit significant magnetic hysteresis. • The coercive field of TbNi{sub 3}MnSi and TbNi{sub 3}FeSi reach 13 kOe and 16 kOe at 5 K.

  6. Gadolinium cation (Gd+) reaction with O2: Potential energy surface mapped experimentally and with theory

    NASA Astrophysics Data System (ADS)

    Demireva, Maria; Armentrout, P. B.

    2017-05-01

    Guided ion beam tandem mass spectrometry is used to measure the kinetic energy dependent cross sections for reactions of the lanthanide metal gadolinium cation (Gd+) and GdO+ with O2 and for collision-induced dissociation (CID) of GdO2+ with Xe. Gd+ reacts with O2 in an exothermic and barrierless reaction to form GdO+ and O. GdO2+ is also formed in this reaction, but this product ion is formed in a sequential reaction, as verified by pressure dependent measurements and comparison with the results for the reaction of GdO+ with O2. The CID experiments of GdO2+ indicate the presence of two GdO2+ precursor ion populations, assigned to a weakly bound oxygen molecule adduct (Gd+-O2) and an inserted cyclic Gd+ dioxide species (O-Gd+-O). Analysis of the resulting product ion cross sections yields bond dissociation energies (BDEs, D0) for Gd+-O2 and OGd+-O, where the latter BDE is also independently measured in an exchange reaction between GdO+ and O2. The CID experiments also provide the energy of the barrier for the rearrangement of the Gd+-O2 adduct to the inserted O-Gd+-O structure (as identified by loss of a single oxygen atom). The thermochemistry measured here yields D0(OGd+-O) = 2.86 ± 0.08 eV, D0(Gd+-O2) = 0.75 ± 0.11 eV, and a barrier height relative to Gd+-O2 of 0.31 ± 0.07 eV. These data are sufficient to characterize in some detail the potential energy surface of the Gd+ reaction with O2 entirely from experiment. Theoretical calculations are performed for comparison with the experimental energetics and for further insight into the reaction mechanisms.

  7. Gadolinium cation (Gd(+)) reaction with O2: Potential energy surface mapped experimentally and with theory.

    PubMed

    Demireva, Maria; Armentrout, P B

    2017-05-07

    Guided ion beam tandem mass spectrometry is used to measure the kinetic energy dependent cross sections for reactions of the lanthanide metal gadolinium cation (Gd(+)) and GdO(+) with O2 and for collision-induced dissociation (CID) of GdO2(+) with Xe. Gd(+) reacts with O2 in an exothermic and barrierless reaction to form GdO(+) and O. GdO2(+) is also formed in this reaction, but this product ion is formed in a sequential reaction, as verified by pressure dependent measurements and comparison with the results for the reaction of GdO(+) with O2. The CID experiments of GdO2(+) indicate the presence of two GdO2(+) precursor ion populations, assigned to a weakly bound oxygen molecule adduct (Gd(+)-O2) and an inserted cyclic Gd(+) dioxide species (O-Gd(+)-O). Analysis of the resulting product ion cross sections yields bond dissociation energies (BDEs, D0) for Gd(+)-O2 and OGd(+)-O, where the latter BDE is also independently measured in an exchange reaction between GdO(+) and O2. The CID experiments also provide the energy of the barrier for the rearrangement of the Gd(+)-O2 adduct to the inserted O-Gd(+)-O structure (as identified by loss of a single oxygen atom). The thermochemistry measured here yields D0(OGd(+)-O) = 2.86 ± 0.08 eV, D0(Gd(+)-O2) = 0.75 ± 0.11 eV, and a barrier height relative to Gd(+)-O2 of 0.31 ± 0.07 eV. These data are sufficient to characterize in some detail the potential energy surface of the Gd(+) reaction with O2 entirely from experiment. Theoretical calculations are performed for comparison with the experimental energetics and for further insight into the reaction mechanisms.

  8. Planar factors of proper homogeneous Lorentz transformations

    SciTech Connect

    Fahnline, D.E.

    1985-02-01

    This article discusses two constructions factoring proper homogeneous Lorentz transformations H into the product of two planar transformations. A planar transformation is a proper homogeneous Lorentz transformation changing vectors in a two-flat through the origin, called the transformation two-flat, into new vectors in the same two-flat and which leaves unchanged vectors in the orthogonal two-flat, called the pointwise invariant two-flat. The first construction provides two planar factors such that a given timelike vector lies in the transformation two-flat of one and in the pointwise invariant two-flat of the other; it leads to several basic conditions on the trace of H and to necessary and sufficient conditions for H to be planar. The second construction yields explicit formulas for the orthogonal factors of H when they exist and are unique, where two planar transformations are orthogonal if the transformation two-flat of one is the pointwise invariant two-flat of the other.

  9. Silica-coated Gd(DOTA)-loaded protein nanoparticles enable magnetic resonance imaging of macrophages

    PubMed Central

    Bruckman, Michael A.; Randolph, Lauren N.; Gulati, Neetu M.; Stewart, Phoebe L.; Steinmetz, Nicole F.

    2015-01-01

    The molecular imaging of in vivo targets allows non-invasive disease diagnosis. Nanoparticles offer a promising platform for molecular imaging because they can deliver large payloads of imaging reagents to the site of disease. Magnetic resonance imaging (MRI) is often preferred for clinical diagnosis because it uses non-ionizing radiation and offers both high spatial resolution and excellent penetration. We have explored the use of plant viruses as the basis of for MRI contrast reagents, specifically Tobacco mosaic virus (TMV), which can assemble to form either stiff rods or spheres. We loaded TMV particles with paramagnetic Gd ions, increasing the ionic relaxivity compared to free Gd ions. The loaded TMV particles were then coated with silica maintaining high relaxivities. Interestingly, we found that when Gd(DOTA) was loaded into the interior channel of TMV and the exterior was coated with silica, the T1 relaxivities increased by three-fold from 10.9 mM−1 s−1 to 29.7 mM−1s−1 at 60 MHz compared to uncoated Gd-loaded TMV. To test the performance of the contrast agents in a biological setting, we focused on interactions with macrophages because the active or passive targeting of immune cells is a popular strategy to investigate the cellular components involved in disease progression associated with inflammation. In vitro assays and phantom MRI experiments indicate efficient targeting and imaging of macrophages, enhanced contrast-to-noise ratio was observed by shape-engineering (SNP > TMV) and silica-coating (Si-TMV/SNP > TMV/SNP). Because plant viruses are in the food chain, antibodies may be prevalent in the population. Therefore we investigated whether the silica-coating could prevent antibody recognition; indeed our data indicate that mineralization can be used as a stealth coating option to reduce clearance. Therefore, we conclude that the silica-coated protein-based contrast agent may provide an interesting candidate material for further investigation

  10. Host-Sensitized NIR Quantum Cutting Emission in Nd(3+) Doped GdNbO4 Phosphors and Effect of Bi(3+) Ion Codoping.

    PubMed

    Shahi, Praveen Kumar; Singh, Priyam; Rai, Shyam Bahadur; Bahadur, Amresh

    2016-02-15

    Host-sensitized near-infrared quantum cutting (QC) emission has been demonstrated in Nd(3+) doped Gd(1-x)Nd(x)NbO4 phosphors for various x values. Further, the effect of Bi(3+) ion addition as a sensitizer on near-infrared QC is studied in detail. X-ray diffraction confirms a monoclinic structure for pure and Nd(3+) doped phosphors. Pulsed laser excitation at 266 nm of Gd(1-x)Nd(x)NbO4 and Gd(0.99-x)Nd(x)Bi(0.01)NbO4 causes efficient room-temperature energy transfer from the NbO4(3-) to the Nd(3+) ions and the NbO4(3-) and Bi(3+) ions to the Nd(3+) ions, respectively, which emits more than one near-infrared photon for single impinging ultraviolet photon. The emission band of Nd(3+) shows unusual character where the intensity of the (4)F(3/2)-(4)I(9/2) transition at 888 nm is higher than the intensity of the transition (4)F(3/2)-(4)I(11/2) at 1064 nm, due to energy transfer from GdNbO4 host to Nd(3+) ion. Using photoluminescence lifetime studies, the quantum cutting efficiencies are found to be the maximum 166% and 172% for Gd(0.95)Nd(0.05)NbO4 and Gd(0.94)Nd(0.05)Bi(0.01)NbO4, respectively. The present study could establish Nd(3+) ion as an alternative of Yb(3+) ion for near-infrared quantum cutting. This work facilitates the probing of Nd(3+) ions doped phosphor materials for next generation Si-solar cells.

  11. Enhanced flux pinning in GdBaCuO bulk superconductors by Zr dopants

    NASA Astrophysics Data System (ADS)

    Xu, C.; Hu, A.; Ichihara, M.; Sakai, N.; Izumi, M.; Hirabayashi, I.

    2007-10-01

    We, respectively, fabricated GdBa2Cu3O7-δ (Gd123) single domain superconductors by melt growth process in air with Gd2Ba4CuZrOx (GdZr2411) and nanosize ZrO2 dopants. The microstructures and superconducting properties were investigated by scanning/transmission electron microscopy (SEM/TEM) and SQUID. GdZr2411 and BaZrO3 particles with the average size of 50 nm were observed in the GdZr2411 and nanosize ZrO2 doped Gd123 bulks by TEM, respectively. Critical current density (Jc) was enhanced up to 100,000 A/cm2 at 77 K and self-field with 0.4 mol% nano-sized ZrO2. The present study also showed that small amount GdZr2411 dopants (8 mol%, ratio to Gd123) were effective to induce a δTc-type pinning.

  12. A therapeutic trial of human melanomas with combined small interfering RNAs targeting adaptor molecules p130Cas and paxillin activated under expression of ganglioside GD3.

    PubMed

    Makino, Yusuke; Hamamura, Kazunori; Takei, Yoshifumi; Bhuiyan, Robiul Hasan; Ohkawa, Yuki; Ohmi, Yuhsuke; Nakashima, Hideyuki; Furukawa, Keiko; Furukawa, Koichi

    2016-08-01

    We previously demonstrated that focal adhesion kinase (FAK), p130Cas and paxillin are crucially involved in the enhanced malignant properties under expression of ganglioside GD3 in melanoma cells. Therefore, molecules existing in the GD3-mediated signaling pathway could be considered as suitable targets for therapeutic intervention in malignant melanoma. The aim of this study was to determine whether blockade of p130Cas and/or paxillin by RNAi suppresses melanoma growth. We found a suitable dose (40 μM siRNA, 25 μl/tumor) of the siRNA to suppress p130Cas in the xenografts generated in nu/nu mice. Based on these results, we performed intratumoral (i.t.) treatment with anti-p130Cas and/or anti-paxillin siRNAs mixed with atelocollagen as a drug delivery system in a xenograft tumor of a human melanoma cell line, SK-MEL-28. Mixture of atelocollagen (1.75%) and an siRNA (500 or 1000 pmol/tumor) was injected into the tumors every 3 days after the first injection. An siRNA against human p130Cas markedly suppressed tumor growth of the xenograft in a dose-dependent manner, whereas siRNA against human paxillin slightly inhibited the tumor growth. A control siRNA against firefly luciferase showed no effect. To our surprise, siRNA against human p130Cas (500 or 1000 pmol/tumor) combined with siRNA against human paxillin dramatically suppressed tumor growth. In agreement with the tumor suppression effects of the anti-p130Cas siRNA, reduction in Ki-67 positive cell number as well as in p130Cas expression was demonstrated by immunohistostaining. These results suggested that blockade of GD3-mediated growth signaling pathways by siRNAs might be a novel and promising therapeutic strategy against malignant melanomas, provided signaling molecules such as p130Cas and paxillin are significantly expressed in individual cases. This article is part of a Special Issue entitled "Glycans in personalised medicine" Guest Editor: Professor Gordan Lauc. Copyright © 2016 Elsevier B.V. All rights

  13. Ion-based materials comprising planar charged species.

    PubMed

    Dong, Bin; Maeda, Hiromitsu

    2013-05-14

    Materials comprising planar units have the propensity to form stacking assemblies with nanoscale architectures and intriguing properties. In this feature article, some recent examples of ion-based materials comprising positively and negatively charged planar species are described. Various ion-based solid and soft materials can be formed by planar charged species alone or with the aid of other components. It is more challenging to prepare planar anions than planar cations; however, the noncovalent association of electronically neutral planar anion receptors and anions is an efficient strategy for the preparation of planar anions. Suitable candidates include dipyrrolyldiketone boron complexes, which exhibit the formation of various receptor-anion complexes and can be used to fabricate advanced materials in combination with countercations. Ion-based materials consisting of planar charged components have potential as electrically conductive materials, resulting from the ordered arrangement of the planar charged species.

  14. Design of reconfigurable GRIN planar optical interconnects

    NASA Astrophysics Data System (ADS)

    Gomez-Reino, C.; Flores-Arias, M. T.; Perez, M. V.; Bao, C.; Castelo, A.; Nieto, D.

    2008-04-01

    Design of all-optics reconfigurable GRIN (Gradient-Index) planar structure for crossover and parallel interconnects will be presented. Design represents a unique combination of GRIN materials, simple geometry optics and waveguide technology for both parallel and distributed processing and communication networks. The optical analysis is based on-axis and off-axis multiple imaging property of GRIN components. The analysis includes the study of the Point Spread Function (PSF) for describing the performance of the GRIN planar structure and the evaluation of the Space Bandwidth Product (SBP) for estimating the number of channels which can be handled. The dependence of the number of channels on the wavelength of the light and the aperture of the planar interconnect is shown. The results are given for five working wavelengths of Laser Diode (LD) and for four transverse aperture of reconfigurable optical interconnect.

  15. Piezo Voltage Controlled Planar Hall Effect Devices

    PubMed Central

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials. PMID:27329068

  16. The Feynman Identity for Planar Graphs

    NASA Astrophysics Data System (ADS)

    da Costa, G. A. T. F.

    2016-08-01

    The Feynman identity (FI) of a planar graph relates the Euler polynomial of the graph to an infinite product over the equivalence classes of closed nonperiodic signed cycles in the graph. The main objectives of this paper are to compute the number of equivalence classes of nonperiodic cycles of given length and sign in a planar graph and to interpret the data encoded by the FI in the context of free Lie superalgebras. This solves in the case of planar graphs a problem first raised by Sherman and sets the FI as the denominator identity of a free Lie superalgebra generated from a graph. Other results are obtained. For instance, in connection with zeta functions of graphs.

  17. Theoretical and experimental study on passive mode-locking composite Nd:GdVO4/Nd:GdVO4/Nd:GdVO4 lasers

    NASA Astrophysics Data System (ADS)

    Wang, X. M.; Li, G. Q.; Zhao, S. Z.; Li, S. X.; Zhang, L.; Guo, Y. J.

    2016-12-01

    Stable passive mode-locking multi-segment composite Nd:GdVO4 lasers with a semiconductor saturable absorber mirror were demonstrated for the first time. For the composite crystals, the output power increased linearly with the increase of the incident pump power, showing excellent thermo-mechanical performances. While for the conventional crystal, power saturation was observed when the incident pump power exceeded 8.79 W. The maximum average output power of 1.465 W was achieved by Nd(0.1%):GdVO4/Nd(0.5%):GdVO4/Nd(1%):GdVO4 composite crystal at an incident pump power of 9.28 W. The largest pulse energy of 14.90 nJ and the highest peak power of 0.53 kW with a pulse duration of 28.0 ps were also obtained by using the same composite crystal, revealing that the multi-segment composite crystal with a proper combination of Nd3+-doped concentrations could obtain the optimal laser performance.

  18. Si Wire-Array Solar Cells

    NASA Astrophysics Data System (ADS)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  19. Microstructures of Si surface layers implanted with Cu

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Myers, S. M.

    Microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, (eta)-Cu3Si forms and Cu diffuses at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and (eta)-Cu3Si (1.7 eV). The 10 at.% Cu layer promotes oxidation of Si catalyzed by (eta)-Cu3Si. The microstructures also indicate that Si implanted with (approximately)2 at.% Cu reforms epitaxially with embedded defects after 8 hr at 700C, but for (approximately)10 at.% Cu, epitaxy is not recovered after 6 hours at 600C.

  20. Microstructures of Si surface layers implanted with Cu

    SciTech Connect

    Follstaedt, D.M.; Myers, S.M.

    1993-12-31

    Microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, {eta}-Cu{sub 3}Si forms and Cu diffuses at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and {eta}-Cu{sub 3}Si (1.7 eV). The 10 at.% Cu layer promotes oxidation of Si catalyzed by {eta}-Cu{sub 3}Si. The microstructures also indicate that Si implanted with {approximately}2 at.% Cu reforms epitaxially with embedded defects after 8 hr at 700C, but for {approximately}10 at.% Cu, epitaxy is not recovered after 6 hours at 600C.