Science.gov

Sample records for ge intermediate layer

  1. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    NASA Astrophysics Data System (ADS)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  2. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect

    Hudait, Mantu K.; Zhu Yan

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  3. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect

    Geiger, R. E-mail: hans.sigg@psi.ch; Sigg, H. E-mail: hans.sigg@psi.ch; Frigerio, J.; Chrastina, D.; Isella, G.; Süess, M. J.; Spolenak, R.; Faist, J.

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  4. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    SciTech Connect

    Mahmodi, H.; Hashim, M. R.

    2010-07-07

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  5. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K.; Sawano, K.

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  6. Ion beam synthesis of SiGe alloy layers

    SciTech Connect

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  7. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE PAGES

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  8. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    SciTech Connect

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a corresponding dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.

  9. Silicon solar cell using optimized intermediate reflector layer

    NASA Astrophysics Data System (ADS)

    Khalifa, Ahmed E.; Swillam, Mohamed A.

    2016-03-01

    Thin film silicon based photovoltaic cells have the advantages of using low cost nontoxic abundant constituents and low thermal manufacturing budget. However, better long-term efficiencies need to be achieved overcoming its inherent bad electrical properties of amorphous and/or microcrystalline Silicon. For the goal of achieving best results, multijunction cells of amorphous and microcrystalline silicon thin layers are industrially and lab utilized in addition to using one or more light management techniques such as textured layers, periodic and plasmonic back reflectors, flattened reflective substrates and intermediate reflector layer (IRL) between multijunction cells. The latter, IRL, which is the focus of this paper, serves as spectrally selective layer between different cells of the multijunction silicon thin film solar cell. IRL, reflects to the top cell short wavelength while permitting and scattering longer ones to achieve the best possible short circuit current. In this study, a new optimized periodic design of Intermediate reflector layer in micromorph (two multijunction cells of Microcrystalline and Amorphous Silicon) thin film solar cells is proposed. The optically simulated short circuit current reaches record values for same thickness designs when using all-ZnO design and even better results is anticipated if Lacquer material is used in combination with ZnO. The design methodology used in the paper can be easily applied to different types of IRL materials and also extended to triple and the relatively newly proposed quadruple thin films solar cells.

  10. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect

    Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  11. Intermediate states of GeO{sub 2} glass under pressures up to 35 GPa

    SciTech Connect

    Hong Xinguo; Prakapenka, Vitali B.; Newville, Matt; Shen Guoyin; Rivers, Mark L.; Sutton, Stephen R.

    2007-03-01

    Density-driven polyamorphism of GeO{sub 2} glass under high pressure has been studied by density, x-ray scattering, and optical Raman measurements. Density data obtained by an x-ray absorption method display distinct compression behavior in different pressure regions, with rapid density increases at 5 and 10 GPa and a plateau at 6-9 GPa. Simultaneous x-ray diffraction reveals that the position of the first sharp diffraction peak (FSDP) increases nearly linearly towards higher scattering vector with pressure up to 10 GPa. Both the width of the FSDP and the Raman stretching band of Ge-O-Ge (419 cm{sup -1}) increase with pressure but exhibit changes in behavior at 2.5 and 7.5 GPa, indicating intermediate states exist in the glass before the collapse of local tetrahedral and pentahedral structural units, respectively. At pressures above 15 GPa, post-octahedral compression with progressive enhancement in network correlation is observed. The results indicate not only the discrete but also rotating intermediate states exist in GeO{sub 2} glass under pressures up to 35 GPa.

  12. Single crystalline SiGe layers on Si by solid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lieten, R. R.; McCallum, J. C.; Johnson, B. C.

    2015-04-01

    We demonstrate a straightforward way to obtain single crystalline SiGe layers on silicon substrates. Amorphous SiGe layers, deposited by plasma enhanced chemical vapour deposition on Si, are transformed into single crystalline and smooth layers by solid phase epitaxy during annealing in a N2 atmosphere. The SiGe layers relax during the crystallization anneal and become slightly tensile strained during cooldown due to the thermal mismatch. The SiGe layers show excellent structural quality for compositions ranging from Ge- to Si-rich. The Ge content can be accurately estimated from the SiH4 to GeH4 flow ratio. Furthermore, the crystallization temperature decreases linearly with increasing Ge content from 725 °C for a-Si to 475 °C for a-Ge.

  13. The microstructure of Ge/Si layers grown at low temperature

    NASA Astrophysics Data System (ADS)

    Roddatis, V. V.; Vasiliev, A. L.; Kovalchuk, M. V.

    2013-11-01

    Multilayer Si/Ge heterostructures with the thickness of Ge layers varying from 2 to 12 monolayers (ML) were formed by molecular beam epitaxy (MBE) on the (001) Si substrates at 300°C (Ge) and 450°C (Si). The study of the Si/Ge heterostructures was performed by transmission and Cs corrected scanning transmission electron microscopy (STEM). It was shown that the growth of Ge layers up to thickness of 5 ML occurs through the Frank - van der Merwe mechanism. For thicker Ge layers the growth mechanism of the Si-Ge heterostructure changes to Stranski - Krastanov with Si-Ge islands having the shape of inverted pyramids. The Si-Ge layer intermixing was discussed.

  14. Tandem photovoltaic cells with a composite intermediate layer

    SciTech Connect

    Travkin, V. V. Pakhomov, G. L.; Luk’anov, A. Yu.; Stuzhin, P. A.

    2015-11-15

    We have fabricated and tested tandem photovoltaic cells containing series-connected subcells of the “oxide–organic semiconductor–metal” type. The organic semiconductors were two phthalocyanine dyes (SubPc and PcVO); Al or Ag:Mg were used as capping metallic electrodes. A semitransparent composite metal–oxide layer formed by molybdenum oxide MoO{sub x} deposited over an ultrathin Al layer is used to join the subcells. Additionally, a MoO{sub x} layer deposited onto glass/ITO substrates serves as an anode buffer in the front subcell, and LiF deposited onto the dye layers serves as a cathode buffer in the front or rear subcells. Upon optimization of the thickness and composition of the intermediate layer, the open circuit voltage U{sub oc} amounts to 1.6 V reflecting total summation of the contributions from the each of the subcells at a wide spectral coating from 300–1000 nm. The fill factor in the tandem cell is not worse than in individually made single cells with the same scheme or in disconnected subcells.

  15. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    PubMed

    Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

    2016-07-27

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit. PMID:27345195

  16. Intermediate coating layer for high temperature rubbing seals for rotary regenerators

    DOEpatents

    Schienle, James L.; Strangman, Thomas E.

    1995-01-01

    A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

  17. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  18. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-11-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  19. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-08-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  20. Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process

    NASA Astrophysics Data System (ADS)

    Kurosawa, Masashi; Ohta, Akio; Araidai, Masaaki; Zaima, Shigeaki

    2016-08-01

    We have developed a new method of growing Si or Ge ultrathin films on a Ag(111) surface by using a Ag-induced layer exchange (ALEX) process toward the creation of 2D honeycomb sheets of Si and Ge, known as silicene and germanene, respectively. In the present paper, we clarify ALEX features, specifically the surface segregation of Si (or Ge) atoms from the underlying substrate, focusing on the annealing temperature and time. Hard X-ray photoelectron spectroscopy analyses demonstrate that surface-segregated Si (or Ge) exists on the Ag surfaces after the epitaxial growth of the Ag layer on Si(111) [or Ge(111)] substrates; the amount of segregated Si (or Ge) can be controlled by a subsequent annealing. Also, we find that the segregation of an ultrathin Si or Ge layer proceeds at an interface between Ag and the AlO x capping layer.

  1. Quantitative C lattice site distributions in epitaxial Ge{sub 1-y}C{sub y}/Ge(001) layers

    SciTech Connect

    D'Arcy-Gall, J.; Gall, D.; Petrov, I.; Desjardins, P.; Greene, J. E.

    2001-10-15

    Epitaxial metastable Ge{sub 1-y}C{sub y} alloy layers with y{<=}0.035 were grown on Ge(001) from hyperthermal Ge and C atomic beams at deposition temperatures T{sub s} of 250 and 300 C. The use of hyperthermal beams allows us to controllably vary the concentration of C incorporated as Ge--C split interstitials. Ge{sub 1-y}C{sub y} layers grown with incident Ge-atom energy distributions corresponding to {<=}0.14 lattice displacement per incident atom (dpa) are in a state of in-plane tension and contain significant concentrations of C atoms incorporated in substitutional sites. Increasing the dpa to 0.24 yields layers in compression with C incorporated primarily as Ge--C split interstitials. Ab initio density functional calculations of the formation energies and strain coefficients associated with C atomic arrangements in Ge show that configurations containing multiple C atoms, referred to collectively as C nanoclusters, are energetically more favorable than substitutional C and Ge--C split interstitials and yield a nearly zero average strain. In contrast, substitutional C and Ge--C split interstitials produce large tensile and compressive strains, respectively. Using the calculated strain coefficients, measured layer strains obtained from high-resolution reciprocal lattice maps, and substitutional C concentrations determined by Raman spectroscopy, we obtain the fraction of C atoms incorporated in substitutional, Ge--C split interstitial, and nanocluster sites as a function of the total C concentration y and T{sub s}. We find that at low y and T{sub s} values, all C atoms are incorporated in single-C configurations: substitutional C and Ge--C split interstitials. Their relative concentrations are controlled by the dpa through the production of near-surface Ge self-interstitials which are trapped by substitutional C atoms to form Ge--C split interstitials. Increasing y and T{sub s}, irrespective of the dpa, leads to an increase in the fraction of C nanoclusters, while

  2. Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

    NASA Astrophysics Data System (ADS)

    Chien, C. Y.; Chang, Y. J.; Chang, J. E.; Lee, M. S.; Chen, W. Y.; Hsu, T. M.; Li, P. W.

    2010-12-01

    We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si1 - xGex, oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.

  3. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  4. Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si Layers

    NASA Technical Reports Server (NTRS)

    Park, Jin S.; Lin, True-Lon; Jones, Eric; Del Castillo, Hector; Gunapala, Sarath

    1996-01-01

    Long-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.

  5. Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer

    NASA Astrophysics Data System (ADS)

    Wenyu, Yuan; Jingping, Xu; Lu, Liu; Yong, Huang; Zhixiang, Cheng

    2016-05-01

    The interfacial and electrical characteristics of Ge metal-oxide-semiconductor (MOS) devices with a dual passivation layer of ZrON/GeON formed by NH3- or N2-plasma treatment are investigated. The experimental results show that the NH3-plasma treated sample exhibits significantly improved interfacial and electrical properties as compared to the samples with N2-plasma treatment and no treatment: a lower interface-state density at the midgap (1.64 × 1011 cm-2 · eV-1) and gate leakage current (9.32 × 10-5 A/cm2 at Vfb + 1 V), a small capacitance equivalent thickness (1.11 nm) and a high k value (32). X-ray photoelectron spectroscopy is used to analyze the involved mechanisms. It is indicated that more GeON and less GeOx (x < 2) are formed on the Ge surface during NH3-plasma treatment than the N2-plasma treatment, resulting in a high-quality high-k/Ge interface, because H atoms and NH radicals in NH3-plasma can enhance volatilization of the unstable low-k GeOx, creating high-quality GeON passivation layer. Moreover, more nitrogen incorporation in ZrON/GeON induced by NH3-plasma treatment can build a stronger N barrier and thus more effectively inhibit in-diffusion of O and Ti from high-k gate dielectric and out-diffusion of Ge. Project supported by the National Natural Science Foundation of China (Nos. 6127411261176100, 61404055).

  6. Formation of buried epitaxial Si-Ge alloy layers in Si<100>crystal by high dose Ge ion implantation

    SciTech Connect

    Yu, Kin Man; Brown, I.G.; Im, S.

    1991-11-01

    We have synthesized single crystal Si{sub 1-x}Ge{sub x} alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 1000 keV and with doses ranging from 1{times}10{sup 16} to 7{times}10{sup 16} ions/cm{sup 2} were implanted into Si <100> crystals at room temperature, resulting in the formation of Si{sub 1-x}Ge{sub x} alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers were initiated by thermal annealing at temperatures higher than 500{degrees}C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si{sub 1-x}Ge{sub x} layers with full width at half maximum {approximately}100nm were formed under a {approximately}30nm Si layer after annealing at 600{degrees}C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900{degrees}C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

  7. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance-voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  8. Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack

    NASA Astrophysics Data System (ADS)

    Kanematsu, Masayuki; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-08-01

    We investigated the effect of GeO2 deposition temperature (T depo) on electronic properties of Al/Al2O3/GeO2/Ge MOS capacitors. Capacitance–voltage characteristics show frequency dispersions under depletion and strong inversion conditions, which can be attributed from the interface states at the atomic layer deposition (ALD)-GeO2/Ge interface and from the defect states in the quasi-neutral region in the Ge substrate, respectively. We found that the interface state density (D it) shows similar values and energy distributions as T depo decreases to 200 from 300 °C, while a higher D it is observed at a T depo of 150 °C. Also, from the temperature dependence of conductance, the frequency dispersion under the strong inversion condition can be related to the minority carrier diffusion to the quasi-neutral region of the Ge substrate. The frequency dependence of conductance reveals that the undesirable increment of the bulk defect density can be suppressed by decreasing T depo. In this study, the bulk defect density in a MOS capacitor prepared at a T depo of 200 °C decreases one tenth compared with that at a T depo of 300 °C. The ALD of GeO2 at a low temperature of around 200 °C is effective for both obtaining a low D it and preventing the undesirable introduction of bulk defect density.

  9. The nature of intermediate-range order in Ge-As-S glasses : results from reverse Monte Carlo modeling.

    SciTech Connect

    Soyer-Uzun, S.; Benmore, C. J.; Siewenie, J. E.; Sen, S.; X-Ray Science Division; Univ.of California at Davis; LANL

    2010-01-01

    The experimental neutron and x-ray diffraction data for stoichiometric and S-deficient Ge{sub x}As{sub x}S{sub 100-2x} glasses with x = 18.2, 25.0, and 33.3 at.% have been modeled simultaneously using the reverse Monte Carlo (RMC) technique. Nearest-neighbor coordination environments, as obtained in previous x-ray absorption spectroscopy and diffraction experiments, have been employed as short-range order constraints in these simulations. The large scale three-dimensional structural models thus obtained from RMC simulation are used to investigate the nature and compositional evolution of intermediate-range structural order in these ternary glasses. The intermediate-range structural order is controlled by (1) a corner-shared three-dimensional network of AsS{sub 3} pyramids and GeS{sub 4} tetrahedra in the stoichiometric Ge{sub 18.2}As{sub 18.2}S{sub 63.6} glass, (2) a heterogeneous structure that consists of homopolar bonded As-rich regions coexisting with a GeS{sub 2} network in the S-deficient Ge{sub 25}As{sub 25}S{sub 50} glass, and (3) a homogeneous structure resulting from the disruption of the topological continuity of the GeS{sub 2} network and As-rich clusters regions due to the formation of Ge-As bonds in the most S-deficient Ge{sub 33.3}As{sub 33.3}S{sub 33.3} glass. This scenario of the compositional evolution of intermediate-range structural order is consistent with and provides an atomistic explanation of the corresponding evolution in the position, width and intensity of the first sharp diffraction peak and the magnitude of small angle scattering in these glasses.

  10. Growth of ultrahigh-Sn-content Ge1- x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact

    NASA Astrophysics Data System (ADS)

    Suzuki, Akihiro; Nakatsuka, Osamu; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Kurosawa, Masashi; Zaima, Shigeaki

    2016-04-01

    We examined the epitaxial growth of an ultrahigh-Sn-content Ge1- x Sn x layer on a Ge substrate and investigated the impact of a Ge1- x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1- x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1- x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density-voltage measurement for Al/Ge1- x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1- x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1- x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1- x Sn x /n-Ge contact because the valence band edge of Ge1- x Sn x would rise as the Sn content increases.

  11. GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors

    NASA Astrophysics Data System (ADS)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Lee, Sung Bo; Park, In-Sung; Ahn, Jinho

    2016-07-01

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeOx interfacial layer (IL) between HfO2 dielectric and Ge substrate in metal/HfO2/GeOx/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeOx IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeOx IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO2 interface.

  12. Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure

    NASA Astrophysics Data System (ADS)

    Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke; Qin, Cao-Jian

    2016-04-01

    In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.

  13. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    NASA Astrophysics Data System (ADS)

    Nolph, C. A.; Kassim, J. K.; Floro, J. A.; Reinke, P.

    2013-08-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T < 160 °C leaves the Mn-clusters on the WL unchanged, while the Mn-islands on the Ge{105} facet undergo first a ripening process, followed by a volume gain which can be attributed to the onset of intermixing with Ge. This development is supported by the statistical analysis of island volume, size and size distribution. Increasing the annealing temperature to 220° and finally 375 ° C leads to a rapid increase in the Mn-surface diffusion, as evidenced by the formation of larger, nanometer size clusters, which are identified as germanide Mn5Ge3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and

  14. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer.

    PubMed

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-08-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T < 160 °C leaves the Mn-clusters on the WL unchanged, while the Mn-islands on the Ge{105} facet undergo first a ripening process, followed by a volume gain which can be attributed to the onset of intermixing with Ge. This development is supported by the statistical analysis of island volume, size and size distribution. Increasing the annealing temperature to 220° and finally 375 ° C leads to a rapid increase in the Mn-surface diffusion, as evidenced by the formation of larger, nanometer size clusters, which are identified as germanide Mn5Ge3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de

  15. Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers

    NASA Astrophysics Data System (ADS)

    Yoon, Tae-Sik

    2005-03-01

    We report the experimental investigation of surface roughness and dislocation distribution of 1 μm-thick, compositionally graded, relaxed SiGe buffer layer with a final Ge surface content of 30%. Tensile-strained Si layers are inserted at various locations in the graded buffer during SiGe epitaxial growths. Slight reduction in surface roughness from about 10.3 nm to about 7.8 nm by inserting two 20 nm thick tensile-strained Si layers followed by SiGe growths. It turns out that majority of the residual surface roughness is developed during the SiGe growths on top of the topmost strain Si layer. The surface immediately after the growth of tensile strained Si is very flat with about 1.1 nm RMS roughness and without crosshatch morphology. Cross-sectional TEM shows clear signs of increased interaction between dislocation half-loops at the top surface of the strained Si layers. Our observation shows that although thin Si layers under tensile-strain are effective in reducing cross-hatch, they could in the meantime impede dislocation propagation leading to higher threading dislocation density. Considerations for an optimized scheme exploiting the flattening function of tensile-strained layers will be discussed.

  16. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  17. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  18. Investigation of the phase relations in the U-Al-Ge ternary system: Influence of the Al/Ge substitution on the properties of the intermediate phases

    NASA Astrophysics Data System (ADS)

    Moussa, C.; El Sayah, Z.; Chajewski, G.; Berche, A.; Dorcet, V.; Pikul, A. P.; Pasturel, M.; Joanny, L.; Stepnik, B.; Tougait, O.

    2016-11-01

    The phase relations within the U-Al-Ge ternary system were studied for two isothermal sections, at 673 K for the whole Gibbs triangle and at 1173 K for the concentration range 25-100 at% U. The identification of the phases, their composition ranges and stability were determined by x-ray powder diffraction, scanning electron microscopy coupled to energy dispersive spectroscopy and differential thermal analysis. The tie-lines and the solubility domains were determined for the U-Ge and U-Al binaries, the UAl3-UGe3 solid-solution and for the unique ternary intermediate phase U3Al2-xGe3+x. The experimental isopleth section of the pseudo-binary UAl3-UGe3 reveals an isomorphous solid solution based on the Cu3Au-type below the solidus. The U3Al2-xGe3+x solid solution extends for -0.1≤x≤1.35 and -0.2≤x≤1.5 at 673 K and 1173 K respectively. It crystallizes in the I-centered tetragonal symmetry. The reciprocal lattice of several compositions of the U3Al2-xGe3+x solid solution was examined by electron diffraction at room temperature, revealing the presence of a c-glide plane. Their crystal structure was refined by single crystal x-ray diffraction suggesting an isomorphous solid solution best described with the non-centrosymmetric space group I4cm in the paramagnetic domain. The magnetic measurements confirm the ferromagnetic ordering of the solid solution U3Al2-xGe3+x with an increase of Tc with the Al content. The thermal variation of the specific heat bear out the magnetic transitions with some delocalized character of the uranium 5f electrons.

  19. Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Luong, G. V.; Wirths, S.; Stefanov, S.; Holländer, B.; Schubert, J.; Conde, J. C.; Stoica, T.; Breuer, U.; Chiussi, S.; Goryll, M.; Buca, D.; Mantl, S.

    2013-05-01

    Excimer Laser Annealing (ELA) with a wavelength of 248 nm is used to study doping of biaxialy compressively strained Si1-xGex/Si heterostructures. The challenge is to achieve a high activation of As in SiGe, while conserving the elastic strain and suppressing dopant diffusion. Doping of 20 nm Si0.64Ge0.36 layers by ion implantation of 1 × 1015 As+/cm2 and subsequent laser annealing using single 20 ns pulse with an energy density of 0.6 J/cm2 leads to an As activation of about 20% and a sheet resistance of 650 Ω/sq. At this laser energy density, the entire SiGe layer melts and the subsequent fast recrystallization on a nanosecond time scale allows high As incorporation into the lattice. Moreover, using these annealing parameters, the SiGe layer exhibits epitaxial regrowth with negligible strain relaxation. ELA at energy densities greater than 0.6 J/cm2 resembles Pulsed Lased Induced Epitaxy, leading to an intermixing of the SiGe layer with the Si substrate, thus to thicker single-crystalline strained SiGe layers with sheet resistance down to 62 Ω/sq. Effects of energy densities on composition, crystal quality, activation of As and co-doping with B are discussed and related to the spatial and temporal evolution of the temperature in the irradiated zone, as simulated by Finite Element Methods.

  20. Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

    SciTech Connect

    Li, Guijun Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

    2014-06-09

    Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400–800 nm) and bottom (800–1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

  1. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  2. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  3. The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

    SciTech Connect

    Fu, Tsu-Yi Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan

    2015-05-07

    Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

  4. Columnar structured FePt films epitaxially grown on large lattice mismatched intermediate layer

    PubMed Central

    Dong, K. F.; Deng, J. Y.; Peng, Y. G.; Ju, G.; Chow, G. M.; Chen, J. S.

    2016-01-01

    The microstructure and magnetic properties of the FePt films grown on large mismatched ZrN (15.7%) intermediate layer were investigated. With using ZrN intermediate layer, FePt 10 nm films exhibited (001) texture except for some weaker FePt (110) texture. Good epitaxial relationships of FePt (001) <100>//ZrN (001) <100>//TiN (001) <100> among FePt and ZrN/TiN were revealed from the transmission electron microscopy (TEM) results. As compared with TiN intermediate layer, although FePt-SiO2-C films grown on ZrN/TiN intermediate layer showed isotropic magnetic properties, the large interfacial energy and lattice mismatch between FePt and ZrN would lead to form columnar structural FePt films with smaller grain size and improved isolation. By doping ZrN into the TiN layer, solid solution of ZrTiN was formed and the lattice constant is increased comparing with TiN and decreased comparing with ZrN. Moreover, FePt-SiO2-C films grown on TiN 2 nm-20 vol.% ZrN/TiN 3 nm intermediate layer showed an improved perpendicular magnetic anisotropy. Simultaneously, columnar structure with smaller grain size retained. PMID:27686046

  5. Enhancement of carrier mobility in thin Ge layer by Sn co-doping

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.

    2016-10-01

    We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.

  6. Pulsed laser annealing of highly doped Ge:Sb layers deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Batalov, R. I.; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A.; Ivlev, G. D.

    2016-10-01

    Germanium (Ge) is a promising material for micro- and optoelectronics to produce high speed field-effect transistors, photodetectors, light-emitting diodes and lasers. For such applications tensile-strained and/or highly n-doped Ge layers are needed. The authors have performed the formation of such layers by ion-beam sputtering of composite Sb/Ge target, deposition of thin amorphous Ge:Sb films (~200 nm thick) on different substrates (c-Si, c-Al2O3, α-SiO2) followed by pulsed laser annealing (PLA) for their crystallization and Sb dopant activation. Structural, electrical and optical characterization of Ge:Sb films was carried out using scanning electron microscopy, x-ray diffraction, micro-Raman spectroscopy, secondary ion mass spectrometry methods and by measuring sheet resistance, carrier concentration and photoluminescence. The obtained polycrystalline n-Ge:Sb layers (N Sb ~ 1 at.%) are characterized by increased values of tensile strain (up to 1%) and homogenious Sb dopant distribution within layer thickness. The electrical measurements at 300 K revealed the low sheet resistance (up to 40 Ω/□) and extremely high electron concentration (up to 5.5  ×  1020 cm-3) in Ge:Sb/SiO2 samples that indicated full electrical activation of Sb dopant on SiO2 substrate. The increased values of tensile strain and electron concentration of Ge:Sb films on α-SiO2 are explained by low values of thermal conductivity and thermal expansion coefficients of quartz substrate.

  7. Porous Ge based Electric Double Layer Capacitors with High Compatibility for Low Threshold Voltage Diode Rectifiers

    NASA Astrophysics Data System (ADS)

    Sekiguchi, A.; Hara, M.; Oguchi, H.; Kuwano, H.

    2014-11-01

    The final goal of this study is to develop all-Ge-based energy harvesting modules consisting of mechanical generators, rectifiers, capacitors and power managing digital circuits. To make basis for the development of modules, we focused on development of the Ge electrodes for electric double layer capacitors (EDLC). Firstly, to establish a method to make high surface area Ge electrodes, we studied surface etching of the Ge(100) substrates in the acid solution. We found that the substrates with higher dopant concentration forms smaller size micro-pores with higher area density that leads to higher surface area. Secondly we studied stability of Ge in the ionic liquid (IL) electrolyte by ac impedance measurements. The impedance plots verified that Ge is reactive in IL electrolyte, thus not appropriate for electrodes without surface modification. Finally we oxidized Ge surface and tested the stability again. The impedance plot of the surface- oxidized Ge showed little reaction, proving that we succeeded to improve the surface stability.

  8. Rapid thermal annealing of Si 1- xGe x layers formed by germanium ion implantation

    NASA Astrophysics Data System (ADS)

    Xia, Z.; Saarilahti, J.; Ronkainen, H.; Eränen, S.; Suni, I.; Molarius, J.; Kuivalainen, P.; Ristolainen, E.; Tuomi, T.

    1994-05-01

    (100) Si samples, amorphized by implanting with 50, 70 and 100 keV 74Ge + ions at doses of the order of 1 × 10 16cm -2, have been recrystallized by rapid thermal annealing (RTA) with different temperature-time ( T- t) combinations. Monte Carlo calculations using TRIM-91 computer program were performed to estimate the depth of amorphized regions, implanted Ge distributions and recoil-implanted O depth profiles. The RBS channeling measurements show that fully epitaxial regrowth of implanted layers can be reached with proper rapid thermal processing. An empirical guide is presented for regrowing the implanted SiGe layers with RTA. The recoil-implanted oxygen in the implanted layers was measured by 16O(α,α) 16O RBS resonance channeling and SIMS.

  9. Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers

    NASA Astrophysics Data System (ADS)

    Comrie, C. M.; Mtshali, C. B.; Sechogela, P. T.; Santos, N. M.; van Stiphout, K.; Loo, R.; Vandervorst, W.; Vantomme, A.

    2016-10-01

    The effect of thermal annealing on epitaxial GeSn (6.5% Sn) strained layers grown on Ge-buffered Si(100) wafers has been investigated using Rutherford backscattering spectrometry and X-ray diffraction to unambiguously determine the Sn substitutional content as well as the elastic strain in the layers. Vacuum annealing at temperatures below 400 °C for 20 min has no noticeable effect on the strain in the epitaxial layers. Once the temperature was raised above 400 °C, however, relaxation of the layer sets in and the GeSn layer has essentially completely relaxed following a 20 min anneal at 650 °C. Using Rutherford backscattering and channelling spectrometry to provide compositional information as a function of depth enables one to monitor the effect of the thermal anneal on the Sn distribution throughout the layer, and also to directly extract their substitutional fraction (i.e., their solubility in the lattice). The results obtained show that when the relaxation initially sets in both the Ge and the Sn remain firmly bound in substitutional lattice sites and it is only around 600 °C, and after substantial relaxation has taken place, that Sn is finally expelled from lattice sites and diffuses to the surface of the sample.

  10. Spin polarized surface resonance bands in single layer Bi on Ge(1 1 1)

    NASA Astrophysics Data System (ADS)

    Bottegoni, F.; Calloni, A.; Bussetti, G.; Camera, A.; Zucchetti, C.; Finazzi, M.; Duò, L.; Ciccacci, F.

    2016-05-01

    The spin features of surface resonance bands in single layer Bi on Ge(1 1 1) are studied by means of spin- and angle-resolved photoemission spectroscopy and inverse photoemission spectroscopy. We characterize the occupied and empty surface states of Ge(1 1 1) and show that the deposition of one monolayer of Bi on Ge(1 1 1) leads to the appearance of spin-polarized surface resonance bands. In particular, the C 3v symmetry, which Bi adatoms adopt on Ge(1 1 1), allows for the presence of Rashba-like occupied and unoccupied electronic states around the \\overline{\\text{M}} point of the Bi surface Brillouin zone with a giant spin-orbit constant |{α\\text{R}}| =≤ft(1.4+/- 0.1\\right) eV · Å.

  11. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.

  12. Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.

    1993-01-01

    We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

  13. High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate

    NASA Astrophysics Data System (ADS)

    Shah, V. A.; Dobbie, A.; Myronov, M.; Leadley, D. R.

    2011-08-01

    After a long period of developing integrated circuit technology through simple scaling of silicon devices, the semiconductor industry is now embracing technology boosters such as strain for higher mobility channel material. Germanium is the logical supplement to enhance existing technologies, as its material behaviour is very close to silicon, and to create new functional devices that cannot be fabricated from silicon alone (Hartmann et al. (2004) [1]). Germanium wafers are, however, both expensive and less durable than their silicon counterparts. Hence it is highly desirable to create a relaxed high quality Ge layer on a Si substrate, with the provision that this does not unduly compromise the planarity of the system. The two temperature method, proposed by Colace et al. (1997) [2], can give smooth (RMS surface roughness below 1 nm) and low threading dislocation density (TDD <10 8 cm -2) Ge layers directly on a Si(0 0 1) wafer (Halbwax et al. (2005) [3]), but these are currently of the order of 1-2 μm thick (Hartmann et al. (2009) [4]). We present an in depth study of two temperature Ge layers, grown by reduced pressure chemical vapour deposition (RP-CVD), in an effort to reduce the thickness. We report the effect of changing the thickness, of both the low temperature (LT) and the high temperature (HT) layers, emphasising the variation of TDD, surface morphology and relaxation. Within this study, the LT Ge layer is deposited directly on a Si(0 0 1) substrate at a low temperature of 400 °C. This low temperature is known to generate monolayer islands (Park et al. (2006) [5]), but is sufficiently high to maintain crystallinity whilst keeping the epitaxial surface as smooth as possible by suppressing further island growth and proceeding in a Frank-van der Merwe growth mode. This LT growth also generates a vast number of dislocations, of the order of 10 8-10 9 cm -2, that enable the next HT step to relax the maximum amount of strain possible. The effect of varying

  14. The Largest Metalloid Group 14 Cluster, Ge18[Si(SiMe3)3]6 : An Intermediate on the Way to Elemental Germanium.

    PubMed

    Kysliak, Oleksandr; Schrenk, Claudio; Schnepf, Andreas

    2016-02-24

    The oxidation of [Ge9(Hyp)3](-) (Hyp=Si(SiMe3 )3) with an Fe(II) salt leads to Ge18 (Hyp)6 (1), the largest Group 14 metalloid cluster that has been structurally characterized to date. The arrangement of the 18 germanium atoms in 1 shows similarities to that found in the solid-state structure Ge(cF136). Furthermore, 1 can be described as a macropolyhedral cluster of two Ge9 units. Quantum-chemical calculations further hint at a strained arrangement so that 1 can be considered as a first trapped intermediate on the way from Ge9 units to elemental germanium with the clathrate-II structure (Ge(cF136)).

  15. Intermediate range chemical ordering in amorphous and liquid water, Si, and Ge

    SciTech Connect

    Benmore, C.J.; Hart, R.T.; Mei, Q.; Price, D.L.; Yarger, J.; Tulk, C.A.; Klug, D.D.

    2005-10-01

    Neutron and x-ray diffraction data for low, high, and very high density amorphous ice and liquid water, silicon, and germanium have been compared in terms of the first sharp diffraction peak in the structure factor and at the radial distribution function level. The low and high density forms of H{sub 2}O, Si, and Ge are shown to have very similar structures if the contributions from the hydrogen correlations in water are neglected. The very high density amorphous ice form is shown to be structurally analogous to recently reported high pressure liquid forms of Si and Ge, although there are slight differences in the way interstitial atoms or molecules are pushed into the first coordination shell.

  16. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    NASA Astrophysics Data System (ADS)

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-05-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

  17. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures

    PubMed Central

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-01-01

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous–crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature. PMID:27220411

  18. Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

    PubMed

    Lotnyk, Andriy; Ross, Ulrich; Bernütz, Sabine; Thelander, Erik; Rauschenbach, Bernd

    2016-05-25

    Insights into the local atomic arrangements of layered Ge-Sb-Te compounds are of particular importance from a fundamental point of view and for data storage applications. In this view, a detailed knowledge of the atomic structure in such alloys is central to understanding the functional properties both in the more commonly utilized amorphous-crystalline transition and in recently proposed interfacial phase change memory based on the transition between two crystalline structures. Aberration-corrected scanning transmission electron microscopy allows direct imaging of local arrangement in the crystalline lattice with atomic resolution. However, due to the non-trivial influence of thermal diffuse scattering on the high-angle scattering signal, a detailed examination of the image contrast requires comparison with theoretical image simulations. This work reveals the local atomic structure of trigonal Ge-Sb-Te thin films by using a combination of direct imaging of the atomic columns and theoretical image simulation approaches. The results show that the thin films are prone to the formation of stacking disorder with individual building blocks of the Ge2Sb2Te5, Ge1Sb2Te4 and Ge3Sb2Te6 crystal structures intercalated within randomly oriented grains. The comparison with image simulations based on various theoretical models reveals intermixed cation layers with pronounced local lattice distortions, exceeding those reported in literature.

  19. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  20. Manifestation of intermediate phase in mechanical properties: Nano-indentation studies on Ge-Te-Si bulk chalcogenide glasses

    NASA Astrophysics Data System (ADS)

    Das, Chandasree; Kiran, M. S. R. N.; Ramamurty, U.; Asokan, S.

    2012-12-01

    Nano-indentation studies have been undertaken on bulk Ge15Te85-xSix glasses (0≤x≤9), to estimate hardness, H and elastic modulus, E. It is found that E and H increase initially with the increase in the atomic percent of Si. Further, a plateau is seen in the composition dependence of E and H in the composition range 2≤x≤6. It is also seen that the addition of up to 2 at% Si increases the density ρ of the glass considerably; however, further additions of Si lead to a near linear reduction in ρ, in the range 2≤x≤6. Beyond x=6, ρ increases again with Si content. The variation of molar volume Vm brings out a more fascinating picture. A plateau is seen in the intermediate phase suggesting that the molecular structure of the glasses is adapting to keep the count of constraints fixed in this particular phase. The observed variations in mechanical properties are associated with the Boolchand's intermediate phase in the present glassy system, in the composition range 2≤x≤6, suggested earlier from calorimetric and electrical switching studies. The present results reveal rather directly the existence of the intermediate phase in elastic and plastic properties of chalcogenide glasses.

  1. Simulation of MLI concerning the influence of an additional heat load on intermediate layers

    SciTech Connect

    Funke, Thomas; Golle, Steffen; Haberstroh, Christoph

    2014-01-29

    Multilayer insulation (MLI) is commonly used in most cryogenic devices such as LHe cryostats or storage vessels. Numerical and experimental studies of such insulation systems are known from literature. The temperature distribution of intermediate layers has been investigated as well. Experiments using temperature sensors, for example thermocouples, to determine the temperature of intermediate layers had been described. Naturally such wiring causes additional heat load on the respective layer and influences the equilibrium temperature. A mathematical model of heat transfer through MLI has been developed to investigate the temperature distribution across the MLI layers. The model comprises a combination of radiation, residual gas conduction and conductive heat flux. An analysis for variable cold and warm boundary temperatures and various residual gases and pressures is carried out. In addition to the model an experimental test rig will be built for the verification of the model. The paper presents the influence of an additional heat load on an intermediate layer on the temperature distribution and on the overall thermal performance of MLI.

  2. Si/Ge double-layered nanotube array as a lithium ion battery anode.

    PubMed

    Song, Taeseup; Cheng, Huanyu; Choi, Heechae; Lee, Jin-Hyon; Han, Hyungkyu; Lee, Dong Hyun; Yoo, Dong Su; Kwon, Moon-Seok; Choi, Jae-Man; Doo, Seok Gwang; Chang, Hyuk; Xiao, Jianliang; Huang, Yonggang; Park, Won Il; Chung, Yong-Chae; Kim, Hansu; Rogers, John A; Paik, Ungyu

    2012-01-24

    Problems related to tremendous volume changes associated with cycling and the low electron conductivity and ion diffusivity of Si represent major obstacles to its use in high-capacity anodes for lithium ion batteries. We have developed a group IVA based nanotube heterostructure array, consisting of a high-capacity Si inner layer and a highly conductive Ge outer layer, to yield both favorable mechanics and kinetics in battery applications. This type of Si/Ge double-layered nanotube array electrode exhibits improved electrochemical performances over the analogous homogeneous Si system, including stable capacity retention (85% after 50 cycles) and doubled capacity at a 3C rate. These results stem from reduced maximum hoop strain in the nanotubes, supported by theoretical mechanics modeling, and lowered activation energy barrier for Li diffusion. This electrode technology creates opportunities in the development of group IVA nanotube heterostructures for next generation lithium ion batteries.

  3. Layered YSZ/SCSZ/YSZ Electrolytes for Intermediate Temperature SOFC Part I: Design and Manufacturing

    SciTech Connect

    Orlovskaya, Nina; Klimov, Mikhail; Huang, Xinyu; Cullen, David A; Graule, Thomas; Kuebler, Jakob

    2012-01-01

    (Sc2O3)0.1(CeO2)0.01(ZrO2)0.89 (SCSZ) ceramic electrolyte has superior ionic conductivity in the intermediate temperature range (700 800 C), but it does not exhibit good phase and chemical stability in comparison with 8 mol% Y2O3 ZrO2 (YSZ). To maintain high ionic conductivity and improve the stability in the whole electrolyte, layered structures with YSZ outer layers and SCSZ inner layers were designed. Because of a mismatch of coefficients of thermal expansion and Young's moduli of SCSZ and YSZ phases, upon cooling of the electrolytes after sintering, thermal residual stresses will arise, leading to a possible strengthening of the layered composite and, therefore, an increase in the reliability of the electrolyte. Laminated electrolytes with three, four, and six layers design were manufactured using tape-casting, lamination, and sintering techniques. After sintering, while the thickness of YSZ outer layers remained constant at 30 m, the thickness of the SCSZ inner layer varied from 30 m for a Y SC Y three-layered electrolyte, 60 m for a Y 2SC Y four-layered electrolyte, and 120 m for a Y 4SC Y six-layered electrolyte. The microstructure, crystal structure, impurities present, and the density of the sintered electrolytes were characterized by scanning and transmission electron microscopy, X-ray and neutron diffraction, secondary ion mass spectroscopy, and water immersion techniques.

  4. Unconventional Superconductivity in the Layered Iron Germanide YFe(2)Ge(2).

    PubMed

    Chen, Jiasheng; Semeniuk, Konstantin; Feng, Zhuo; Reiss, Pascal; Brown, Philip; Zou, Yang; Logg, Peter W; Lampronti, Giulio I; Grosche, F Malte

    2016-03-25

    The iron-based intermetallic YFe_{2}Ge_{2} stands out among transition metal compounds for its high Sommerfeld coefficient of the order of 100  mJ/(mol K^{2}), which signals strong electronic correlations. A new generation of high quality samples of YFe_{2}Ge_{2} show superconducting transition anomalies below 1.8 K in thermodynamic, magnetic, and transport measurements, establishing that superconductivity is intrinsic in this layered iron compound outside the known superconducting iron pnictide or chalcogenide families. The Fermi surface geometry of YFe_{2}Ge_{2} resembles that of KFe_{2}As_{2} in the high pressure collapsed tetragonal phase, in which superconductivity at temperatures as high as 10 K has recently been reported, suggesting an underlying connection between the two systems.

  5. Uniaxial strain relaxation in He{sup +} ion implanted (110) oriented SiGe layers

    SciTech Connect

    Minamisawa, R. A.; Buca, D.; Trinkaus, H.; Hollaender, B.; Mantl, S.; Destefanis, V.; Hartmann, J. M.

    2009-07-20

    Uniaxially strained (011)Si is attractive for high performance p-channel metal oxide semiconductor field effect transistor devices due to the predicted high hole mobilities. Here, we demonstrate the realization of purely uniaxially relaxed (011) SiGe virtual substrates by He{sup +} ion implantation and thermal annealing. Perfect uniaxial relaxation is evidenced by precise ion channeling angular yield scan measurements and plan view transmission electron microscopy as predicted theoretically on the basis of the layer symmetry dependent dislocation dynamics. Strikingly, misfit dislocations propagate exclusively along the [011] direction in the (011) oriented crystal and, in contrast to (100)Si, no crosshatch is formed. We describe dislocation formation and propagation inducing strain relaxation of (011)SiGe and enlighten the differences to (100) oriented SiGe on Si.

  6. Acquiring Peak Samples from Phytoplankton Thin Layers and Intermediate Nepheloid Layers by an Autonomous Underwater Vehicle with Adaptive Triggering

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; McEwen, R.; Ryan, J. P.; Bellingham, J. G.; Harvey, J.; Vrijenhoek, R.

    2010-12-01

    Phytoplankton thin layers (PTLs) affect many fundamental aspects of coastal ocean ecology including primary productivity, development of harmful algal blooms (HABs) and the survival and growth of zooplankton and fish larvae. Intermediate nepheloid layers (INLs) that contain suspended particulate matter transported from the bottom boundary layer of continental shelves and slopes also affect biogeochemistry and ecology of ocean margins. To better understand the impacts of these types of layers, we have developed an adaptive sampling method for an autonomous underwater vehicle (AUV) to detect a layer (adjusting detection parameters in situ), acquire water samples from peaks in the layer, and acquire control samples outside the layer. We have used the method in a number of field experiments with the AUV Dorado, which is equipped with ten water samplers (called "gulpers"). In real time, the algorithm tracks background levels of fluorescence and optical backscatter and the peaks' baseline to ensure that detection is tuned to the ambient conditions. The algorithm cross-checks fluorescence and backscatter signals to differentiate PTLs from INLs. To capture peak water samples with minimal delay, the algorithm exploits the AUV's sawtooth (i.e., yo-yo) trajectory: the vehicle crosses the detected layer twice in one yo-yo cycle. At the first crossing, it detects the layer's peak and saves its signal height. Sampling is triggered at the second crossing when the signal reaches the saved peak height plus meeting additional timing and depth conditions. The algorithm is also capable of triggering gulpers to acquire control samples outside the layer for comparison with ambient water. The sequence of peak and control samples can be set based on need. In recent AUV Dorado missions, the algorithm triggered the gulpers to acquire peak and control samples from INLs and PTLs in Monterey Bay. Zooplankton analysis of some peak samples showed very high concentrations of mussel and barnacle

  7. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix

    NASA Astrophysics Data System (ADS)

    Buljan, M.; Radić, N.; Sancho-Paramon, J.; Janicki, V.; Grenzer, J.; Bogdanović-Radović, I.; Siketić, Z.; Ivanda, M.; Utrobičić, A.; Hübner, R.; Weidauer, R.; Valeš, V.; Endres, J.; Car, T.; Jerčinović, M.; Roško, J.; Bernstorff, S.; Holy, V.

    2015-02-01

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

  8. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

    NASA Astrophysics Data System (ADS)

    Barreteau, C.; Michon, B.; Besnard, C.; Giannini, E.

    2016-06-01

    Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.

  9. ⁶⁸Ge content quality control of ⁶⁸Ge/⁶⁸Ga-generator eluates and ⁶⁸Ga radiopharmaceuticals--a protocol for determining the ⁶⁸Ge content using thin-layer chromatography.

    PubMed

    Eppard, Elisabeth; Loktionova, Natalia S; Rösch, Frank

    2014-09-01

    (68)Ge breakthrough from a (68)Ge/(68)Ga-generator appears to be one of the most critical parameters for the routine clinical application of this generator and (68)Ga-radiopharmaceuticals. We report a TLC-based (thin-layer chromatography) protocol which allows the (68)Ge breakthrough of a generator to be determined within 1 h post-initial elution. The protocol can also be adapted to allow the (68)Ge content of a (68)Ga-radiopharmaceutical preparation to be determined prior to in vivo application.

  10. Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

    NASA Technical Reports Server (NTRS)

    Yao, H.; Woollam, J. A.; Wang, P. J.; Tejwani, M. J.; Alterovitz, S. A.

    1993-01-01

    Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

  11. Structural characterization of strained silicon grown on a SiGe buffer layer

    NASA Astrophysics Data System (ADS)

    Jang, J. H.; Phen, M. S.; Gerger, A.; Jones, K. S.; Hansen, J. L.; Larsen, A. N.; Craciun, V.

    2008-03-01

    The microstructure of about 50 nm thick strained-Si/Si0.7Ge0.3/graded-SiGe/Si-substrate layers grown by MBE (molecular beam epitaxy) was characterized using high-resolution x-ray based characterization techniques. The degree of relaxation of the Si-capping layer after a thermal anneal at 800 °C for 30 min was determined using reciprocal space map (RSM) scans recorded around the (1 1 3) diffraction plane. However, since a RSM is not suitable when the strain relaxation is very small, x-ray reflectivity (XRR) and omega rocking curves (ω-RCs) were employed for the relaxation study. XRR spectra were collected and analyzed to obtain thickness, Ge concentration and surface/interfacial roughness information of the as-grown and annealed samples. ω-RCs were performed in order to investigate the crystalline quality of the samples. It was found that the annealed strained layer showed higher Lorentzian fraction in ω-RCs and misfit defect density which were caused by strain relaxation. In addition, the results showed that after the annealing process the broadening in the tail region of the ω-RCs was indicative of a change in the coherence length distribution of the crystallite size. The misfit defects and surface morphology obtained from transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations were consistent with results obtained from the x-ray based characterization techniques.

  12. Vertical thermo-haline structure of the Baltic Sea cold intermediate layer

    NASA Astrophysics Data System (ADS)

    Stepanova, Natalya

    2016-04-01

    Main characteristic features of vertical thermo-haline structure of the cold intermediate layer (CIL) of the Baltic Sea are identified on the base of data of vertical CTD soundings in the Baltic Proper in 2004-2013. Permanently existing components (i.e., the components which are observed during the entire period of the presence of the CIL in the vertical thermo-haline structure of the sea) are: (i) quasi-homosaline sublayer, with water salinity typical for that in the upper mixed layer in winter period, and water temperature irregularly changing with depth; (ii) the underlying sublayer with increasing salinity and low temperature (the gradient sublayer); and (iii) the core of CIL (the minimum temperature), which is located close to the interface between these sublayers. It is argued that the homosaline sublayer is formed by local mechanisms - vertical wind-wave and convective mixing and advection from nearby shelves and neighbouring regions. Advection is supported by (i) long-lasting winds and (ii) horizontal convection due to differential warming / cooling of shallower regions. The gradient sublayer is formed by waters with T,S - parameters typical for that of the upper mixed layer of south-western sea basins (Barnholm and Arcons basins) at the beginning of spring warming-up period (March). It is suggested that the up-estuary propagation of these waters (with salinity about 7.5-8.5 psu) above the pycnocline is driven by the estuarine salinity gradient. This branch of circulation of intermediate waters is overlooked in classical estuarine circulation model of the Baltic Sea, however it is important for sea-scale transport of upper-layer contaminants, microplastics, organic matter etc. towards intermediate and deep sea layers. The investigations are supported by Russian Science Foundation via grant number 15-17-10020.

  13. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  14. Improved conductivity of indium-tin-oxide film through the introduction of intermediate layer

    NASA Astrophysics Data System (ADS)

    Ng, S. W.; Yam, F. K.; Beh, K. P.; Tneh, S. S.; Hassan, Z.

    2016-09-01

    A thin intermediate layer (Ag, AuSn, In, Ni, Sn, SiO2) was individually deposited on glass substrates prior to the deposition of indium-tin-oxide (ITO) thin film by radio-frequency (RF) magnetron sputtering employing ITO target (composition ratio of In2O3:SnO2 = 9:1). The structural, optical and electrical properties were investigated to compare the ITO thin film with and without an intermediate layer. The preferential orientation of all ITO films was along (222) plane. Although all thin films were polycrystalline, the presence of intermediate layer promoted the overall crystallinity. The sheet resistance and resistivity of the ITO film were reduced from ∼68 Ω/□ to ∼29-45 Ω/□, and 16.2 × 10-4 Ω cm up to 7.58 × 10-4 Ω cm, respectively, by inserting a thin metal layer underneath the ITO film, and it is dependent on the degree of crystallization. The optical transmittance in the visible region varies from 40 to 88% for different samples. Based on the evaluation from Tauc plot, the optical band gap falls in the range of 4.02-4.12 eV. Physical film thickness was compared with that evaluated by optical measurement in the visible range and the physical thickness was found to be smaller. Similarly, the carrier concentration/scattering time from Hall effect measurement were also compared with that from optical measurement in the infrared region. Haacke's figure of merit (FOM) was employed to assess the quality of the ITO films, and the highest FOM is credited to ITO/In up to ∼8 × 10-3 Ω-1 in the visible light region.

  15. UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

    NASA Astrophysics Data System (ADS)

    Pastor, D.; Olea, J.; del Prado, A.; García-Hemme, E.; Mártil, I.; González-Díaz, G.; Ibáñez, J.; Cuscó, R.; Artús, L.

    2011-11-01

    We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (1015-5 × 1016 cm-2) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ultraheavily impurified Si layers with Ti concentrations six orders of magnitude above the solid solubility limit in a layer several tens of nanometers thick. The PLM annealing processes are needed to recover the crystal quality and to keep the high Ti concentration required to form an intermediate band (IB). The UV Raman analysis permits us to evaluate the lattice crystallinity of the different implanted doses probing only the implanted region and points out Ti interstitial location in the host lattice in agreement with theoretical predictions for IB formation. By contrast, visible Raman spectra are only sensitive to the presence of a fully amorphized implanted layer as in the rest of the crystalline layers the probing depth far exceeds the implanted layer thickness and the signal is dominated by the undamaged Si.

  16. FePtC magnetic recording media with (200) textured MoC intermediate layer

    SciTech Connect

    Tsai, Jai-Lin Tseng, Yun-Ting; Li, Chia-Ru; Fu, Sheng-Chun

    2015-05-07

    The FePt films with thickness of 4–10 nm were deposited on MoC/CrRu/glass at 425 °C by using magnetron sputtering. The Mo{sub 40}C{sub 60} target was used to form the MoC and C two phases after deposition. The MoC intermediate layer was epitaxially grown on the (200) textured CrRu seed layer at 425 °C and the MoC (200) diffraction peak was not clearly indexed below 10 nm but observed at 25 nm. Finally, the FePt film was prepared on (200) textured MoC at 425 °C and shown the strong (001) texture. Perpendicular anisotropy of 1.7 × 10{sup 7} erg/cm{sup 3} and out-of-plane coercivity of 7.5 kOe has been demonstrated in 10 nm thick FePt film. From microstructure, the FePt grains were distributed in- or between-islands like structure and further separated by excess carbon from MoC intermediate layer. Thinner FePt film was more separated by excess carbon and shown higher coercivity.

  17. Commissioning and Operational Experience With an Intermediate Upgrade Cryomodule for the CEBAF 12 GeV Upgrade

    SciTech Connect

    Thomas Powers; G. Davis; Michael Drury; Christiana Grenoble; J. Hovater; Lawrence King; Tomasz Plawski; Joseph Preble

    2005-07-10

    Three cryomodules have been designed and built as intermediate prototypes for the CEBAF 12 GeV upgrade. This paper will discuss the commissioning and operational experience with the second of these cryomodules, which was installed and commissioned in the Jefferson Lab 10 kW Free Electron Laser Facility. Within the cryomodule are eight 7-cell, 1497 MHz cavities. It was designed to accelerate 1 mA of beam in excess of 70 MV and to have the same footprint as a standard CEBAF cryomodule. The cryomodule was installed in parallel with the FEL beam line in the spring of 2004 and characterized simultaneous with beam delivery. It was installed in the beam line in the early summer of 2004 and has since been operated as part of an energy recovered linac with 5 mA of beam current and 75 MV accelerating gradient for extended periods of time. Additionally, it was operated at 1 mA of beam current and 80 MV of accelerating gradient for several hours without a trip. In the latter operating mode the beam current was limited by the injector setup.

  18. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    NASA Astrophysics Data System (ADS)

    Pastor, D.; Olea, J.; del Prado, A.; García-Hemme, E.; García-Hernansanz, R.; Mártil, I.; González-Díaz, G.

    2013-04-01

    We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/ΔV and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/ΔV and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

  19. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  20. Inversion layer on the Ge(001) surface from the four-probe conductance measurements

    SciTech Connect

    Wojtaszek, Mateusz; Lis, Jakub Zuzak, Rafal; Such, Bartosz; Szymonski, Marek

    2014-07-28

    We report four-probe conductance measurements with sub-micron resolution on atomically clean Ge(001) surfaces. A qualitative difference between n-type and p-type crystals is observed. The scaling behavior of the resistance on n-type samples indicates two-dimensional current flow, while for the p-type crystal a three-dimensional description is appropriate. We interpret this in terms of the formation of an inversion layer at the surface. This result points to the surface states, i.e., dangling bonds, as the driving force behind band bending in germanium. It also explains the intrinsic character of band bending in germanium.

  1. In-situ observations of intermediate layers in the night time ionosphere

    NASA Astrophysics Data System (ADS)

    Gregory, J.; Swenson, C. M.; Humphries, S.; Fish, C.; Carlson, C.; Barjatya, A.

    2005-12-01

    Night time ionospheric electron density profiles have been obtained using impedance and Langmuir probe techniques showing the presence of intermediate layers. Four sounding rockets were launched in July of 2003 at Wallops Island, VA and two more were launched in August of 2004 from Kwajalein atoll, Marshall Islands. Although these rocket campaigns were conducted at different latitudes they both indicated a patchy spatial structure. All six flights used essentially the same plasma impedance probe but the later campaign included a sweeping Langmuir probe. More emphasis is given to the data from the later campaign, "Scattering Layer in the Bottomside Equatorial F-region Ionosphere" investigation, which was a part of the NASA EQUIS II campaign. Electron density from this data set is analyzed using Balmain's theory for a short antenna in a cold magnetoplasma and compared with data from the sweeping Langmuir probe.

  2. Investigation of Ti/Al2O3 joints with intermediate tantalum and niobium layers.

    PubMed

    Gibbesch, B; Elssner, G; Petzow, G

    1992-01-01

    The microstructure of TiTa30 alloys diffusion bonded to a 99.7 wt% Al2O3 ceramic was subdivided into a reaction double layer containing the intermetallic phases TiAl and Ti3Al and the (alpha + beta) Ti microstructure. Excellent fracture toughness data of the TiTa30/Al2O3 joints of about 37 J/m2 were obtained after welding at 1200 degrees C for 1 h. The fracture energies of the joints were strongly dependent on the welding temperature which also influenced the thickness of the reaction double layer. The uptake of aluminium and oxygen into the reaction layer and the metal caused an embrittlement and decreased the yield stress and ductility of the metal. Introducing an Nb or Ta layer between pure Ti and Al2O3 before welding resulted in high fracture energies of 40 J/m2 for the Ti/Al2O3 joints. The thermal-induced stresses at the metal-ceramic interface were reduced by the occurrence of an Nb- or Ta-enriched region. The intermediate metal foils also decreased the O and Al uptake of the metal and therefore reduced the brittleness of the reaction zone and the adjacent metal. The thermal-induced stresses at the metal-ceramic interface caused a deflection of the crack into the ceramic during fracture mechanical testing in four-point bending.

  3. Influence of encapsulation temperature on Ge:P {delta}-doped layers

    SciTech Connect

    Scappucci, G.; Simmons, M. Y.; Capellini, G.

    2009-12-15

    We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P {delta}-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the {delta} layer. We demonstrate that a step-flow growth achieved at {approx}530 deg. C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility {approx}128 cm{sup 2}/Vs at a carrier density 1.3x10{sup 14} cm{sup -2}, and a 4.2 K phase coherence length of {approx}180 nm.

  4. Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

    NASA Astrophysics Data System (ADS)

    Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

    2006-09-01

    Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

  5. Enhanced Sensitivity of Anti-Symmetrically Structured Surface Plasmon Resonance Sensors with Zinc Oxide Intermediate Layers

    PubMed Central

    Tu, Yi-Chen; Huang, Teng-Yi; Chiu, Nan-Fu

    2014-01-01

    We report a novel design wherein high-refractive-index zinc oxide (ZnO) intermediary layers are used in anti-symmetrically structured surface plasmon resonance (SPR) devices to enhance signal quality and improve the full width at half maximum (FWHM) of the SPR reflectivity curve. The surface plasmon (SP) modes of the ZnO intermediary layer were excited by irradiating both sides of the Au film, thus inducing a high electric field at the Au/ZnO interface. We demonstrated that an improvement in the ZnO (002) crystal orientation led to a decrease in the FWHM of the SPR reflectivity curves. We optimized the design of ZnO thin films using different parameters and performed analytical comparisons of the ZnO with conventional chromium (Cr) and indium tin oxide (ITO) intermediary layers. The present study is based on application of the Fresnel equation, which provides an explanation and verification for the observed narrow SPR reflectivity curve and optical transmittance spectra exhibited by (ZnO/Au), (Cr/Au), and (ITO/Au) devices. On exposure to ethanol, the anti-symmetrically structured showed a huge electric field at the Au/ZnO interface and a 2-fold decrease in the FWHM value and a 1.3-fold larger shift in angle interrogation and a 4.5-fold high-sensitivity shift in intensity interrogation. The anti-symmetrically structured of ZnO intermediate layers exhibited a wider linearity range and much higher sensitivity. It also exhibited a good linear relationship between the incident angle and ethanol concentration in the tested range. Thus, we demonstrated a novel and simple method for fabricating high-sensitivity, high-resolution SPR biosensors that provide high accuracy and precision over relevant ranges of analyte measurement. PMID:24361929

  6. Enhanced sensitivity of anti-symmetrically structured surface plasmon resonance sensors with zinc oxide intermediate layers.

    PubMed

    Chiu, Nan-Fu; Tu, Yi-Chen; Huang, Teng-Yi

    2013-01-01

    We report a novel design wherein high-refractive-index zinc oxide (ZnO) intermediary layers are used in anti-symmetrically structured surface plasmon resonance (SPR) devices to enhance signal quality and improve the full width at half maximum (FWHM) of the SPR reflectivity curve. The surface plasmon (SP) modes of the ZnO intermediary layer were excited by irradiating both sides of the Au film, thus inducing a high electric field at the Au/ZnO interface. We demonstrated that an improvement in the ZnO (002) crystal orientation led to a decrease in the FWHM of the SPR reflectivity curves. We optimized the design of ZnO thin films using different parameters and performed analytical comparisons of the ZnO with conventional chromium (Cr) and indium tin oxide (ITO) intermediary layers. The present study is based on application of the Fresnel equation, which provides an explanation and verification for the observed narrow SPR reflectivity curve and optical transmittance spectra exhibited by (ZnO/Au), (Cr/Au), and (ITO/Au) devices. On exposure to ethanol, the anti-symmetrically structured showed a huge electric field at the Au/ZnO interface and a 2-fold decrease in the FWHM value and a 1.3-fold larger shift in angle interrogation and a 4.5-fold high-sensitivity shift in intensity interrogation. The anti-symmetrically structured of ZnO intermediate layers exhibited a wider linearity range and much higher sensitivity. It also exhibited a good linear relationship between the incident angle and ethanol concentration in the tested range. Thus, we demonstrated a novel and simple method for fabricating high-sensitivity, high-resolution SPR biosensors that provide high accuracy and precision over relevant ranges of analyte measurement. PMID:24361929

  7. Intermediate valence to heavy fermion through a quantum phase transition in Yb3(Rh 1 -xTx )4Ge13 (T =Co ,Ir ) single crystals

    NASA Astrophysics Data System (ADS)

    Rai, Binod K.; Oswald, Iain W. H.; Chan, Julia Y.; Morosan, E.

    2016-01-01

    Single crystals of Yb3(Rh 1 -xTx )4Ge13 (T =Co ,Ir ) have been grown using the self-flux method. Powder x-ray diffraction data on these compounds are consistent with the cubic structure with space group P m 3 ¯n . Intermediate-valence behavior is observed in Yb3(Rh 1 -xTx )4Ge13 upon T = Co doping, while T = Ir doping drives the system into a heavy-fermion state. Antiferromagnetic order is observed in the Ir-doped samples Yb3(Rh 1 -xTx )4Ge13 for 0.5 Ge13 . With decreasing x , the magnetic order is suppressed towards a quantum critical point around xc = 0.5, accompanied by non-Fermi-liquid behavior evidenced by logarithmic divergence of the specific heat and linear temperature dependence of the resistivity. The Fermi-liquid behavior is recovered with the application of large magnetic fields.

  8. Intermediate valence to heavy fermion through a quantum phase transition in Yb3(Rh1-xTx)4Ge13 (T = Co, Ir) single crystals

    NASA Astrophysics Data System (ADS)

    Rai, Binod; Morosan, Emilia

    Single crystals of Yb3(Rh1-x Tx)4Ge13 (T = Co, Ir) have been grown using the self-flux method. Powder X-ray diffraction data on these compounds are consistent with the cubic structure with space group Pm 3 n . Intermediate valence behavior is observed in Yb3(Rh1-x Tx)4Ge13 upon T = Co doping, while T = Ir doping drives the system into a heavy fermion state. Antiferromagnetic order is observed in the Ir-doped samples Yb3(Rh1-x Tx)4Ge13 for 0.5 < x <= 1 with TN = 0.96 K for Yb3Ir4Ge13. With decreasing x, the magnetic order is suppressed towards a quantum critical point around xc = 0.5, accompanied by non-Fermi liquid behavior evidenced by logarithmic divergence of the specific heat and linear temperature dependence of the resistivity. The Fermi liquid behavior is recovered with the application of large magnetic fields. Gordon and Betty Moore Foundation EPiQS initiative through Grant GBMF4417 and Welch Foundation.

  9. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

    NASA Astrophysics Data System (ADS)

    Ivlev, G. D.; Kazuchits, N. M.; Prakopyeu, S. L.; Rusetsky, M. S.; Gaiduk, P. I.

    2014-12-01

    The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO0.5Ge0.5 solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.

  10. Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates

    NASA Astrophysics Data System (ADS)

    Bogumilowicz, Y.; Hartmann, J. M.; Rochat, N.; Salaun, A.; Martin, M.; Bassani, F.; Baron, T.; David, S.; Bao, X.-Y.; Sanchez, E.

    2016-11-01

    We have grown GaAs epitaxial layers on Ge buffers, themselves on Si (001) substrates, using an Applied Materials 300 mm metal organic chemical vapor deposition tool. We varied the Ge buffer thickness between 0.36 and 1.38 μm and studied the properties of a 0.27 μm thick GaAs layer on top. We found that increasing the Ge buffer thickness yielded smoother GaAs films with an rms surface roughness as low as 0.5 nm obtained on a 5×5 μm2 area. The bow of the substrate increased following a linear law with the epitaxial stack thickness up to 240 μm for a 1.65 μm stack. We have also characterized the threading dislocations present in the GaAs layers using X-ray diffraction and cathodoluminescence. Increasing the Ge buffer thickness resulted in lower threading dislocation densities, enabling us to obtain anti-phase boundary - free GaAs films with a threading dislocation density as low as 3×107 cm-2. In addition, atomic force microscopy surface topology measurements showed the presence of pits in the GaAs layers whose density agreed well with other threading dislocation density assessments. It thus seems that threading dislocations can in certain cases induce some growth rate variations, making them visible in as-grown GaAs films. Using thicker Ge buffers results in smoother films with less threading dislocations, with the side effect of increasing the bow on the wafer. If bow is not an issue, this is a practical approach to improve the GaAs (on Ge buffer) on silicon quality.

  11. Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space.

    PubMed

    Hrauda, N; Zhang, J J; Süess, M J; Wintersberger, E; Holý, V; Stangl, J; Deiter, C; Seeck, O H; Bauer, G

    2012-11-23

    We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.

  12. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

    NASA Astrophysics Data System (ADS)

    El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C.; Li, X.; Chuang, Chih-Li

    2016-07-01

    Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

  13. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting

    PubMed Central

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing’ao; Huang, Wei

    2016-01-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm−2 at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1−xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system. PMID:27250648

  14. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing’Ao; Huang, Wei

    2016-06-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm‑2 at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1‑xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system.

  15. Interface induce growth of intermediate layer for bandgap engineering insights into photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Zhang, Qiaoxia; Wang, Lianhui; Li, Xing'Ao; Huang, Wei

    2016-06-01

    A model of interface induction for interlayer growing is proposed for bandgap engineering insights into photocatalysis. In the interface of CdS/ZnS core/shell nanorods, a lamellar solid solution intermediate with uniform thickness and high crystallinity was formed under interface induction process. Merged the novel charge carrier transfer layer, the photocurrent of the core/shell/shell nanorod (css-NR) array was significantly improved to 14.0 mA cm-2 at 0.0 V vs. SCE, nearly 8 times higher than that of the perfect CdS counterpart and incident photon to electron conversion efficiency (IPCE) values above 50% under AM 1.5G irradiation. In addition, this array photoelectrode showed excellent photocatalytic stability over 6000 s. These results suggest that the CdS/Zn1-xCdxS/ZnS css-NR array photoelectrode provides a scalable charge carrier transfer channel, as well as durability, and therefore is promising to be a large-area nanostructured CdS-based photoanodes in photoelectrochemical (PEC) water splitting system.

  16. Effect of high-pressure H{sub 2}O treatment on elimination of interfacial GeO{sub X} layer between ZrO{sub 2} and Ge stack

    SciTech Connect

    Huang, Chen-Shuo; Liu, Po-Tsun

    2011-08-22

    This investigation demonstrates the effect of high-pressure H{sub 2}O treatment on the elimination of the interfacial germanium suboxide (GeO{sub X}) layer between ZrO{sub 2} and Ge. The formation of GeO{sub X} interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H{sub 2}O treatment eliminates the interfacial GeO{sub X} layer. The physical mechanism involves the oxidation of non-oxidized Zr with H{sub 2}O and the reduction of GeO{sub X} by H{sub 2}. Treatment with H{sub 2}O reduces the gate-leakage current of a ZrO{sub 2}/Ge capacitor by a factor of 1000.

  17. Metal-HfO{sub 2}-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO{sub 2} layer

    SciTech Connect

    Park, In-Sung; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho; Lee, Sung Bo

    2015-01-15

    The charge trapping properties of metal-HfO{sub 2}-Ge capacitor as a nonvolatile memory have been investigated with (NH{sub 4}){sub 2}S-treated Ge substrate and atomic-layer-deposited HfO{sub 2} layer. The interfacial layer generated by (NH{sub 4}){sub 2}S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO{sub 2}-Ge capacitor with (NH{sub 4}){sub 2}S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO{sub 2}-Ge capacitor with cyclic-cleaned Ge substrate.

  18. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

    NASA Astrophysics Data System (ADS)

    Ramalingam, Gopalakrishnan; Floro, Jerrold A.; Reinke, Petra

    2016-05-01

    The annealing of sub-critical Ge wetting layers (WL < 3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 °C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening during annealing at T < 460 °C when vacancy lines and the 2xn reconstruction are observed. The metastable Ge WL then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: first, the hillocks, with a wedding cake-type structure where the step edges run parallel to the ⟨110⟩ direction, are formed from thin wetting layers, while {105}-faceted structures, called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between the hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system.

  19. Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; Fathauer, R. W.; Anderson, M. S.

    1992-01-01

    The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

  20. Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method

    NASA Astrophysics Data System (ADS)

    Sawano, Kentarou; Ozawa, Yusuke; Fukumoto, Atsushi; Usami, Noritaka; Yamanaka, Junji; Suzuki, Kumiko; Arimoto, Keisuke; Nakagawa, Kiyokazu; Shiraki, Yasuhiro

    2005-10-01

    Strain-relaxed thin SiGe layers grown on ion-implanted Si substrates were evaluated by X-ray diffraction reciprocal space mapping and spatially resolved micro-Raman spectroscopy. It was found that implantation-induced defects effectively facilitated the misfit dislocation generation and multiplication during postannealing after growth, leading to large and homogeneous strain relaxation. While in-plane strain-field fluctuation with crosshatch morphology was clearly observed in the SiGe layer without implantation, a very uniform strain distribution without such morphology was realized in the sample with implantation. These results indicate that the ion implantation method is a very promising approach for realization of high-quality and extremely thin buffer layers.

  1. Differential Gene Expression of the Intermediate and Outer Interzone Layers of Developing Articular Cartilage in Murine Embryos

    PubMed Central

    IJpma, Arne; Cleary, Mairead; Heijsman, Daphne; Narcisi, Roberto; van der Spek, Peter J.; Kremer, Andreas; van Weeren, René; Brama, Pieter; van Osch, Gerjo J.V.M.

    2014-01-01

    Nascent embryonic joints, interzones, contain a distinct cohort of progenitor cells responsible for the formation of the majority of articular tissues. However, to date the interzone has largely been studied using in situ analysis for candidate genes in the context of the embryo rather than using an unbiased genome-wide expression analysis on isolated interzone cells, leaving significant controversy regarding the exact role of the intermediate and outer interzone layers in joint formation. Therefore, in this study, using laser capture microdissection (three biological replicates), we selectively harvested the intermediate and outer interzones of mouse embryos at gestational age 15.5 days, just prior to cavitation, when the differences between the layers should be most profound. Microarray analysis (Agilent Whole Mouse Genome Oligo Microarrays) was performed and the differential gene expression between the intermediate interzone cells and outer interzone cells was examined by performing a two-sided paired Student's t-test and pathway analysis. One hundred ninety-seven genes were differentially expressed (≥2-fold) between the intermediate interzone and the outer interzone with a P-value≤0.01. Of these, 91 genes showed higher expression levels in the intermediate interzone and 106 were expressed higher in the outer interzone. Pathway analysis of differentially expressed genes suggests an important role for inflammatory processes in the interzone layers, especially in the intermediate interzone, and hence in joint and articular cartilage development. The high representation of genes relevant to chondrocyte hypertrophy and endochondral ossification in the outer interzone suggests that it undergoes endochondral ossification. PMID:24738827

  2. Differential gene expression of the intermediate and outer interzone layers of developing articular cartilage in murine embryos.

    PubMed

    Jenner, Florien; IJpma, Arne; Cleary, Mairead; Heijsman, Daphne; Narcisi, Roberto; van der Spek, Peter J; Kremer, Andreas; van Weeren, René; Brama, Pieter; van Osch, Gerjo J V M

    2014-08-15

    Nascent embryonic joints, interzones, contain a distinct cohort of progenitor cells responsible for the formation of the majority of articular tissues. However, to date the interzone has largely been studied using in situ analysis for candidate genes in the context of the embryo rather than using an unbiased genome-wide expression analysis on isolated interzone cells, leaving significant controversy regarding the exact role of the intermediate and outer interzone layers in joint formation. Therefore, in this study, using laser capture microdissection (three biological replicates), we selectively harvested the intermediate and outer interzones of mouse embryos at gestational age 15.5 days, just prior to cavitation, when the differences between the layers should be most profound. Microarray analysis (Agilent Whole Mouse Genome Oligo Microarrays) was performed and the differential gene expression between the intermediate interzone cells and outer interzone cells was examined by performing a two-sided paired Student's t-test and pathway analysis. One hundred ninety-seven genes were differentially expressed (≥ 2-fold) between the intermediate interzone and the outer interzone with a P-value ≤ 0.01. Of these, 91 genes showed higher expression levels in the intermediate interzone and 106 were expressed higher in the outer interzone. Pathway analysis of differentially expressed genes suggests an important role for inflammatory processes in the interzone layers, especially in the intermediate interzone, and hence in joint and articular cartilage development. The high representation of genes relevant to chondrocyte hypertrophy and endochondral ossification in the outer interzone suggests that it undergoes endochondral ossification.

  3. Observations of intermediate nepheloid layers on the northern California continental margin

    NASA Astrophysics Data System (ADS)

    McPhee-Shaw, E. E.; Sternberg, R. W.; Mullenbach, B.; Ogston, A. S.

    2004-04-01

    Conductivity-temperature-depth and transmissometer surveys were undertaken to investigate the characteristics and seasonal nature of intermediate nepheloid layers (INLs) over the outer shelf and upper slope of the northern California margin, near Eureka, CA. Observed INLs could generally be grouped into one of two categories: INLs that formed and spread seaward from the continental shelf, and INLs generated at continental slope depths greater than 150 m. Shelf INLs, forming between 70 and 150-m depth on the outer shelf and extending seaward 15-20 km past the shelf break, were prevalent during winter and early spring. Continental slope INLs were found during all seasons of the year. Their suspended particulate matter concentration was lower than that of the shelf INLs, and their horizontal extent was 3-7 km seaward from the slope. Mooring data from 450-m depth show strong bottom-trapped semidiurnal internal tidal energy and asymmetry between upslope and downslope semidiurnal motions, indicative of bore-like behavior. These analyses suggest that critical reflection of internal tides is a common feature of the outer continental slope in this region. The location of slope-depth INLs was often observed to coincide with regions where the topographic slope angle was critical for internal tide reflection. In addition, seasonal variability in the span of critical topography over the slope matches seasonal variability in the density of observed INLs over the continental slope. Slope-depth INLs appear to be associated with energetic tidal motions and interaction between internal tides and bathymetry, whereas shelf-depth INLs are likely formed by resuspension events on the outer shelf and subsequent transport offshore by mesoscale circulation processes.

  4. Tuneable Magnetic Phase Transitions in Layered CeMn2Ge2-xSix Compounds

    PubMed Central

    Md Din, M. F.; Wang, J. L.; Cheng, Z. X.; Dou, S. X.; Kennedy, S. J.; Avdeev, M.; Campbell, S. J.

    2015-01-01

    The structural and magnetic properties of seven CeMn2Ge2-xSix compounds with x = 0.0–2.0 have been investigated in detail. Substitution of Ge with Si leads to a monotonic decrease of both a and c along with concomitant contraction of the unit cell volume and significant modifications of the magnetic states - a crossover from ferromagnetism at room temperature for Ge-rich compounds to antiferromagnetism for Si-rich compounds. The magnetic phase diagram has been constructed over the full range of CeMn2Ge2-xSix compositions and co-existence of ferromagnetism and antiferromagnetism has been observed in CeMn2Ge1.2Si0.8, CeMn2Ge1.0Si1.0 and CeMn2Ge0.8Si1.2 with novel insight provided by high resolution neutron and X-ray synchrotron radiation studies. CeMn2Ge2-xSix compounds (x = 0, 0.4 and 0.8) exhibit moderate isothermal magnetic entropy accompanied with a second-order phase transition around room temperature. Analysis of critical behaviour in the vicinity of TCinter for CeMn2Ge2 compound indicates behaviour consistent with three-dimensional Heisenberg model predictions. PMID:26090940

  5. Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

    SciTech Connect

    Pantzas, Konstantinos; Patriarche, Gilles; Talneau, Anne; Youssef, Jamal Ben

    2014-10-06

    Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO{sub 2}/amorphous-YIG bilayer is formed and welds the garnet to silicon.

  6. Study of the intermediate layer at the n{sup +}-CdS/p-CdTe interface

    SciTech Connect

    Muzafarova, S. A. Aitbaev, B. U.; Mirsagatov, Sh. A.; Durshimbetov, K.; Zhanabergenov, Zh.

    2008-12-15

    The effect of production conditions and subsequent stimulation by ultrasonic irradiation on the formation of a solid solution at the n-CdS/p-CdTe interface in solar cells has been investigated. The phase composition of the solid-solution transient layer was investigated by a nondestructive photoelectric method (measurement of the spectral distribution of photosensitivity in the gate and photodiode modes). It is shown that the phase composition and thickness of the intermediate CdTe{sub 1-x}S{sub x} layer depend strongly on the heterostructure formation conditions.

  7. Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS.

    PubMed

    Li, Chun; Huang, Liang; Snigdha, Gayatri Pongur; Yu, Yifei; Cao, Linyou

    2012-10-23

    We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

  8. Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

    NASA Astrophysics Data System (ADS)

    Conde, J. C.; González, P.; Lusquiños, F.; Chiussi, S.; Serra, J.; León, B.

    2005-07-01

    In this work, the finite elements analysis using ANSYS ® (8.0) of the heteroepitaxial SiGe alloy formation induced by excimer lasers is presented. The numerical simulation of the temperature distribution induced by KrF excimer laser (energy densities 0.50 < Φ< 0.55 J/cm 2) on thin amorphous Ge films (10 nm thick) deposited on Si<1 0 0> substrates is obtained. An acceptable agreement between the numerical simulations and the experimental results is found. The melting depth is also evaluated and the laser energy density threshold for the partial melting of the Si substrate is estimated. It allows us to determine the optimum conditions to achieve high quality epitaxy. For both the cases, the temperature profile versus time on the top of the Ge film and at the Ge/Si interface are obtained.

  9. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    NASA Astrophysics Data System (ADS)

    Höger, Ingmar; Himmerlich, Marcel; Gawlik, Annett; Brückner, Uwe; Krischok, Stefan; Andrä, Gudrun

    2016-01-01

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  10. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  11. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V.; Bobrov, A. I.; Daniltsev, V. M.; Novikov, A. V.; Pavlov, D. A.; Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A.

    2015-11-15

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

  12. Neutral pion cross section and spin asymmetries at intermediate pseudorapidity in polarized proton collisions at √s =200 GeV

    NASA Astrophysics Data System (ADS)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Anson, C. D.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Balewski, J.; Banerjee, A.; Barber, B.; Barnovska, Z.; Beavis, D. R.; Bellwied, R.; Betancourt, M. J.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Borowski, W.; Bouchet, J.; Brandin, A. V.; Bridgeman, A.; Brovko, S. G.; Bültmann, S.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, L.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chwastowski, J.; Codrington, M. J. M.; Corliss, R.; Cramer, J. G.; Crawford, H. J.; Cui, X.; Das, S.; Davila Leyva, A.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Derradi de Souza, R.; Dhamija, S.; di Ruzza, B.; Didenko, L.; Dilks, C.; Ding, F.; Dion, A.; Djawotho, P.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Engle, K. S.; Eppley, G.; Eun, L.; Evdokimov, O.; Fatemi, R.; Fazio, S.; Fedorisin, J.; Fersch, R. G.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Gagliardi, C. A.; Gangadharan, D. R.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Gliske, S.; Grosnick, D.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Haag, B.; Hajkova, O.; Hamed, A.; Han, L.-X.; Haque, R.; Harris, J. W.; Hays-Wehle, J. P.; He, W.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, B.; Huang, H. Z.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Jena, C.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Kesich, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lima, L. M.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Luo, X.; Ma, G. L.; Ma, Y. G.; Madagodagettige Don, D. M. M. D.; Mahapatra, D. P.; Majka, R.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; McShane, T. S.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Munhoz, M. G.; Mustafa, M. K.; Naglis, M.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nogach, L. V.; Noh, S. Y.; Nord, P. M.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Ohlson, A.; Okorokov, V.; Oldag, E. W.; Oliveira, R. A. N.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peryt, W.; Peterson, A.; Pile, P.; Planinic, M.; Pluta, J.; Plyku, D.; Pochron, W.; Poljak, N.; Porter, J.; Poskanzer, A. M.; Powell, C. B.; Pruneau, C.; Pruthi, N. K.; Przybycien, M.; Pujahari, P. R.; Putschke, J.; Qiu, H.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Riley, C. K.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Ross, J. F.; Roy, A.; Ruan, L.; Rusnak, J.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandacz, A.; Sandweiss, J.; Sangaline, E.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schaub, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Singaraju, R. N.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solanki, D.; Sorensen, P.; deSouza, U. G.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Sumbera, M.; Sun, X.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Trzeciak, B. A.; Tsai, O. D.; Turnau, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wada, M.; Walker, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, Q.; Wang, X. L.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, H.; Xu, N.; Xu, Q. H.; Xu, W.; Xu, Y.; Xu, Z.; Yan, W.; Yang, C.; Yang, Y.; Yang, Y.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Zawisza, Y.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, S.; Zhang, X. P.; Zhang, Y.; Zhang, Z. P.; Zhao, F.; Zhao, J.; Zhong, C.; Zhu, X.; Zhu, Y. H.; Zoulkarneeva, Y.; Zyzak, M.; STAR Collaboration

    2014-01-01

    The differential cross section and spin asymmetries for neutral pions produced within the intermediate pseudorapidity range 0.8<η<2.0 in polarized proton-proton collisions at √s =200 GeV are presented. Neutral pions were detected using the end cap electromagnetic calorimeter in the STAR detector at RHIC. The cross section was measured over a transverse momentum range of 5GeV /c and is found to agree with a next-to-leading order perturbative QCD calculation. The longitudinal double-spin asymmetry ALL is measured in the same pseudorapidity range and spans a range of Bjorken-x down to x ≈0.01. The measured ALL is consistent with model predictions for varying degrees of gluon polarization. The parity-violating asymmetry AL is also measured and found to be consistent with zero. The transverse single-spin asymmetry AN is measured over a previously unexplored kinematic range in Feynman-x and pT. Such measurements may aid our understanding of the onset and kinematic dependence of the large asymmetries observed at more forward pseudorapidity (η ≈3) and their underlying mechanisms. The AN results presented are consistent with a twist-3 model prediction of a small asymmetry over the present kinematic range.

  13. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  14. Interface magnetism of Co{sub 2}FeGe Heusler alloy layers and magnetoresistance of Co{sub 2}FeGe/MgO/Fe magnetic tunnel junctions

    SciTech Connect

    Tanaka, M. A. Maezaki, D.; Ishii, T.; Okubo, A.; Mibu, K.; Hiramatsu, R.; Ono, T.

    2014-10-28

    The interface magnetism between Co{sub 2}FeGe Heusler alloy layers and MgO layers was investigated using {sup 57}Fe Mössbauer spectroscopy. Interface-sensitive samples, where the {sup 57}Fe isotope was used only for the interfacial atomic layer of the Co{sub 2}FeGe layer on the MgO layer, were prepared using atomically controlled alternate deposition. The {sup 57}Fe Mössbauer spectra of the interface-sensitive samples at room temperature were found similar to those of the bulk-sensitive Co{sub 2}FeGe films in which the {sup 57}Fe isotope was distributed throughout the films. On the other hand, the tunnel magnetoresistance effect of magnetic tunnel junctions with Co{sub 2}FeGe layers as the ferromagnetic electrodes showed strong reduction at room temperature. These results indicate that the strong temperature dependence of the tunneling magnetoresistance of magnetic tunnel junctions using Heusler alloy electrodes cannot be attributed simply to the reduction of the magnetization at the interfaces between the Heusler alloy and insulator layers.

  15. Observations of low and intermediate-frequency-peaked BL Lacs above 100 GeV with VERITAS

    NASA Astrophysics Data System (ADS)

    Errando, M.

    2013-12-01

    Most of the ~ 50 blazars detected to date at TeV energies (E > 0.1 TeV) are high-frequency-peaked BL Lacs (HBLs). Only a handful episodic detections of low- and intermediate-frequency-peaked BL Lacs (LBL/IBLs, with synchrotron peak frequencies in the infrared and optical regime) have been reported by ground-based gamma-ray telescopes, typically during high-flux states. The VERITAS array located in southern Arizona has observed five known TeV LBL/IBLs since 2009: 3C 66A, WComae, PKS 1424+240, S5 0716+714 and BL Lacertae, with exposures of 5-10 hours/year, which so far resulted in the detection of a bright, sub-hour timescale gamma-ray flare of BL Lacertae in June 2011. We also report the detection and characterization of two new IBLs: VER J0521+211 and B2 1215+30.

  16. New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; George, T.; Jones, E. W.; Pike, W. T.; Ksendzov, A.; Vasquez, R. P.

    1992-01-01

    Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.

  17. Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

    PubMed Central

    2013-01-01

    Barium titanate (BaTiO3) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO3 thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO3 film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO3 thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO3 film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2Pr) of 5 μC/cm2, and coercive field (Ec) of 60 kV/cm. PMID:23391429

  18. Structural and electrical studies of ultrathin layers with Si{sub 0.7}Ge{sub 0.3} nanocrystals confined in a SiGe/SiO{sub 2} superlattice

    SciTech Connect

    Vieira, E. M. F.; Martin-Sanchez, J.; Rolo, A. G.; Levichev, S.; Gomes, M. J. M.; Parisini, A.; Buljan, M.; Capan, I.; Alves, E.; Barradas, N. P.; Conde, O.; Bernstorff, S.; Chahboun, A.

    2012-05-15

    In this work, SiGe/SiO{sub 2} multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 deg. C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 deg. C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over the Si substrate appear immune to this problem. This finding has been exploited for the fabrication of a defect free metal-oxide-semiconductor structure with a well-defined single layer of SiGe NCs. A memory effect attributed to the presence of the SiGe NCs has been demonstrated by high frequency capacitance-voltage measurements.

  19. Antiferromagnetic Kondo lattice in the layered compounds Re2NiGa9Ge2 (Re =Ce, Pr, Sm)

    NASA Astrophysics Data System (ADS)

    Zhu, Yanglin; Liu, Jinyu; Hu, Jin; Adams, Daniel; Spinu, Leonard; Mao, Zhiqiang

    Intermetallic compounds containing rare-earth/actinide elements with 4f/5f electrons have formed a special family of strongly correlated materials, i.e. heavy fermion systems. We have recently found a new layered rare earth intermetallic system showing moderate heavy fermion behavior: Re2NiGa9Ge2 (Re =Ce, Sm, Pr). The Re =Ce and Sm members were previously synthesized, while their electronic properties have not been reported. We have recently grown single crystals of Re2NiGa9Ge2 (Re =Ce, Sm, Pr) and characterized their electronic and magnetic properties. We find all these materials are antiferromagnetic, with TN = 2.5 K, 5 K, 3.4 K respectively for Re =Ce, Pr and Sm. Moreover, they also exhibit large values of electronic specific coefficient: γ ~ 101 mJ mol-Ce-1 K-2 for Re =Ce, 368 mJ mol-Pr-1 K-2 for Re =Pr, and 196.4 mJ mol-Sm-1 K-2 for Re =Sm, indicating enhanced Kondo effect and the presence of AFM Kondo lattice. Our findings suggest that Re2NiGa9Ge2 (Re =Ce, Pr, Sm) could be interesting candidate materials for exploring novel exotic properties of correlated electrons through external parameter tuning such as chemical substitution and pressure.

  20. Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

    PubMed

    Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

    2013-10-01

    We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

  1. Intermediate valence in single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} (0 ≤ x ≤ 1)

    SciTech Connect

    Rai, Binod K.; Morosan, E.

    2015-04-01

    Single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu{sub 3}Rh{sub 4}Ge{sub 13} compound tunes this cubic system’s properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ≤ x ≤0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series.

  2. Development of Thermal Barrier Coating System with Superior Thermal Cyclic Properties with an Intermediate Layer Containing MoSi2

    NASA Astrophysics Data System (ADS)

    Sonoya, Keiji; Tobe, Shogo

    The authors have developed a method of improving the thermal cyclic resistance of the thermal barrier coating system that is deposited on gas turbine components. A conventional thermal barrier coating consists of a duplex system: a top coating and a bond coating. The developed system has a protective intermediate layer of MoSi2 which prevents oxidation of the bond coating. The conventional duplex plasma -sprayed coating was delaminated after 20 thermal cycles. On the other hand, the developed triple-layered coating system was not delaminated after 60 cycles. The reason for the enhanced resistance to thermal cycles of the developed triple-layered coating system is that the MoSi2 layer between the top coating and the bond coating has a self-repairing property. MoSi2 oxidizes to form SiO2, which seals the cracks and pores formed between the top coating and the bond coating. Thus, the formation of a thermally grown oxide(TGO), which causes the delamination of the coating, is prevented and the thermal cyclic resistance is improved.

  3. Atomic layer deposition of Al{sub 2}O{sub 3} on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

    SciTech Connect

    Gupta, Suyog Chen, Robert; Harris, James S.; Saraswat, Krishna C.

    2013-12-09

    GeSn is quickly emerging as a potential candidate for high performance Si-compatible transistor technology. Fabrication of high-ĸ gate stacks on GeSn with good interface properties is essential for realizing high performance field effect transistors based on this material system. We demonstrate an effective surface passivation scheme for n-Ge{sub 0.97}Sn{sub 0.03} alloy using atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. The effect of pre-ALD wet chemical surface treatment is analyzed and shown to be critical in obtaining a good quality interface between GeSn and Al{sub 2}O{sub 3}. Using proper surface pre-treatment, mid-gap trap density for the Al{sub 2}O{sub 3}/GeSn interface of the order of 10{sup 12} cm{sup −2} has been achieved.

  4. Intermediate honeycomb ordering to trigger oxygen redox chemistry in layered battery electrode

    NASA Astrophysics Data System (ADS)

    Mortemard de Boisse, Benoit; Liu, Guandong; Ma, Jiangtao; Nishimura, Shin-Ichi; Chung, Sai-Cheong; Kiuchi, Hisao; Harada, Yoshihisa; Kikkawa, Jun; Kobayashi, Yoshio; Okubo, Masashi; Yamada, Atsuo

    2016-04-01

    Sodium-ion batteries are attractive energy storage media owing to the abundance of sodium, but the low capacities of available cathode materials make them impractical. Sodium-excess metal oxides Na2MO3 (M: transition metal) are appealing cathode materials that may realize large capacities through additional oxygen redox reaction. However, the general strategies for enhancing the capacity of Na2MO3 are poorly established. Here using two polymorphs of Na2RuO3, we demonstrate the critical role of honeycomb-type cation ordering in Na2MO3. Ordered Na2RuO3 with honeycomb-ordered [Na1/3Ru2/3]O2 slabs delivers a capacity of 180 mAh g-1 (1.3-electron reaction), whereas disordered Na2RuO3 only delivers 135 mAh g-1 (1.0-electron reaction). We clarify that the large extra capacity of ordered Na2RuO3 is enabled by a spontaneously ordered intermediate Na1RuO3 phase with ilmenite O1 structure, which induces frontier orbital reorganization to trigger the oxygen redox reaction, unveiling a general requisite for the stable oxygen redox reaction in high-capacity Na2MO3 cathodes.

  5. Intermediate honeycomb ordering to trigger oxygen redox chemistry in layered battery electrode

    PubMed Central

    Mortemard de Boisse, Benoit; Liu, Guandong; Ma, Jiangtao; Nishimura, Shin-ichi; Chung, Sai-Cheong; Kiuchi, Hisao; Harada, Yoshihisa; Kikkawa, Jun; Kobayashi, Yoshio; Okubo, Masashi; Yamada, Atsuo

    2016-01-01

    Sodium-ion batteries are attractive energy storage media owing to the abundance of sodium, but the low capacities of available cathode materials make them impractical. Sodium-excess metal oxides Na2MO3 (M: transition metal) are appealing cathode materials that may realize large capacities through additional oxygen redox reaction. However, the general strategies for enhancing the capacity of Na2MO3 are poorly established. Here using two polymorphs of Na2RuO3, we demonstrate the critical role of honeycomb-type cation ordering in Na2MO3. Ordered Na2RuO3 with honeycomb-ordered [Na1/3Ru2/3]O2 slabs delivers a capacity of 180 mAh g−1 (1.3-electron reaction), whereas disordered Na2RuO3 only delivers 135 mAh g−1 (1.0-electron reaction). We clarify that the large extra capacity of ordered Na2RuO3 is enabled by a spontaneously ordered intermediate Na1RuO3 phase with ilmenite O1 structure, which induces frontier orbital reorganization to trigger the oxygen redox reaction, unveiling a general requisite for the stable oxygen redox reaction in high-capacity Na2MO3 cathodes. PMID:27088834

  6. Ohmic contacts to [ital n]-GaAs with a Pt/Ge/Au contacting layer and a Ta-Si-N barrier: Electrical and metallurgical characteristics

    SciTech Connect

    Chen, J.S.; Kolawa, E.; Nicolet, M. ); Ruiz, R.P. )

    1994-06-01

    Pt/Ge/Au trilayers of various Pt:Ge compositions, overlaid with a Ta-Si-N barrier layer and an Au metallization layer, are investigated as ohmic contacts to [ital n]-type GaAs. After annealing in flowing argon at 450 [degree]C for 15 min, a contact resistivity of 3.7[times]10[sup [minus]6] [Omega] cm[sup 2] is obtained for the sample of atomic ratio Pt/Ge=1. The contact resistivity of this sample degrades only slightly to 5.0[times]10[sup [minus]6] [Omega] cm[sup 2] upon aging at 450 [degree]C for 60 h, while the surface stays smooth. Contact resistivities of samples with other Pt/Ge atomic ratios are in the range of 10[sup [minus]5]--10[sup [minus]4] [Omega] cm[sup 2]. To understand this electrical behavior, the contacts are characterized by backscattering spectrometry, x-ray diffraction, and transmission electron microscopy in conjunction with energy-dispersive analysis of x rays. The reaction products vary with the Pt:Ge compositions due to the difference of the chemical reactivity between Pt, Ge, and GaAs. The formation and distribution of a ternary PtGe:As phase are the determining factors for the contact resistivity. The outstanding thermal stability of the contact is due to the Ta-Si-N barrier layer which closes the GaAs-trilayer system and protects their chemical equilibria from being disrupted by an inflow of Au from the metallization layer. Without the barrier layer, the morphology of the contact degrades badly at 450 [degree]C after 20 h or less.

  7. Adhesion promotion of Cu on C by Cr intermediate layers investigated by the SIMS method.

    PubMed

    Mayerhofer, Karl E; Neubauer, Erich; Eisenmenger-Sittner, Christoph; Hutter, Herbert

    2002-10-01

    Copper-carbon composites are candidate materials for heat sinks for high speed/high-performance electronic components. They combine high thermal conductivity with low density and a tailorable coefficient of thermal expansion (CTE). Because of the low wettability of carbon by copper, a thin layer of chromium can be deposited to promote both the adhesion and the thermal contact of copper with the carbon fibers. Therefore, in a first step layers of Cr and Cu were deposited by magnetron sputtering on plane vitreous carbon substrates (Sigradur G), which serve as a model for carbon fibers. From pull-off-adhesion measurements an interlayer thickness of Cr in the range of 2-10 nm was found to provide the optimal adhesion for 1 micro m thick copper overlayers. To model the later serial fabrication of the composite that involves a hot pressing step following the deposition, the C/Cr/Cu samples were heat treated at 800 degrees C under vacuum for 1 h. Adhesion on the heat-treated samples was superior in comparison to the untreated ones. To obtain information about the adhesion mechanism secondary ion mass spectrometry (SIMS) investigations were done on the depth distribution of the main elements copper, chromium, and carbon. Two samples, one as deposited and one subjected to heat treatment after deposition, were compared in this investigation. We found that heat treatment mainly modifies the distribution of Cr in the C/Cr/Cu system. PMID:12397477

  8. Increasing carbon inventory of the intermediate layers of the Arctic Ocean

    NASA Astrophysics Data System (ADS)

    Ericson, Ylva; Ulfsbo, Adam; van Heuven, Steven; Kattner, Gerhard; Anderson, Leif G.

    2014-04-01

    Concentrations of dissolved inorganic carbon (DIC), total alkalinity (TA), nutrients, and oxygen in subsurface waters of the central Arctic Ocean have been investigated for conceivable time trends over the last two decades. Data from six cruises (1991-2011) that cover the Nansen, Amundsen, and Makarov Basins were included in this analysis. In waters deeper than 2000 m, no statistically significant trend could be observed for DIC, TA, phosphate, or nitrate, but a small rate of increase in apparent oxygen utilization (AOU) was noticeable. For the individual stations, differences in concentration of each property were computed between the mean concentrations in the Arctic Atlantic Water (AAW) or the upper Polar Deep Water (uPDW), i.e., between about 150 and 1400 m depth, and in the deep water (assumed invariable over time). In these shallower water layers, we observe significant above-zero time trends for DIC, in the range of 0.6-0.9 μmol kg-1 yr-1 (for AAW) and 0.4-0.6 µmol kg-1 yr-1 (for uPDW). No time trend in nutrients could be observed, indicating no change in the rate of organic matter mineralization within this depth range. Consequently, the buildup of DIC is attributed to increasing concentrations of anthropogenic carbon in the waters flowing into these depth layers of the Arctic Ocean. The resulting rate of increase of the column inventory of anthropogenic CO2 is estimated to be between 0.6 and 0.9 mol C m-2 yr-1, with distinct differences between basins.

  9. Electrical characterization of low temperature deposited TiO 2 films on strained-SiGe layers

    NASA Astrophysics Data System (ADS)

    Dalapati, G. K.; Chatterjee, S.; Samanta, S. K.; Maiti, C. K.

    2003-04-01

    Thin films of titanium dioxide have been deposited on strained Si 0.82Ge 0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C 3H 7) 4] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density ( Dit), fixed oxide charge density ( Qf/ q) and flat-band voltage ( VFB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10 11 eV -1 cm -2, 3.1×10 11 cm -2 and -1.4 V, respectively. The capacitance-voltage ( C- V), current-voltage ( I- V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.

  10. Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE

    NASA Astrophysics Data System (ADS)

    Lai, Fang-I.; Kuo, Shou-Yi; Chen, Wei-Chun; Lin, Woei-Tyng; Wang, Wei-Lin; Chang, Li; Hsiao, Chien-Nan; Chiang, Chung-Hao

    2011-07-01

    In this paper, high-quality wurtzite indium nitride was epi-grown on sapphire substrates by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. In addition, high-resolution X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy (TEM), Hall Effect, Raman and photoluminescence spectroscopy were carried out to characterize the effect of the growth temperature on structural and optoelectronic properties. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially grown InN/GaN interface is sharp, and the spacing of the InN(0 0 0 2) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm -1 attributed to the E 2(high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved using heteroepitaxy on GaN/sapphire templates.

  11. Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

    NASA Astrophysics Data System (ADS)

    Dev, Sachin; Remesh, Nayana; Rawal, Yaksh; Manik, Prashanth Paramahans; Wood, Bingxi; Lodha, Saurabh

    2016-03-01

    This work demonstrates the benefit of a lower contact barrier height, and hence reduced contact resistivity (ρc), using a low work-function metal (Yb) in unpinned metal-interfacial layer-semiconductor (MIS) contacts on n-type Ge. Fermi-level unpinning in MIS contacts on n-Ge is first established by introducing a 2 nm TiO2-x interfacial layer between various contact metals (Yb, Ti, Ni, Pt) and n-Ge. Further, Yb/TiO2-x/n-Ge MIS contact diodes exhibit higher current densities (up to 100×) and lower effective contact barrier height (up to 30%) versus Ti/TiO2-x control devices over a wide range of TiO2-x thickness (1-5 nm). Finally, low work-function Yb combined with doped TiO2-x having a low conduction band offset with Ge and high substrate doping (n+-Ge: 2.5 ×1019 cm-3) is shown to result in an ultra-low ρc value of 1.4 × 10-8 Ω cm2, 10 × lower than Ti/TiO2-x control devices.

  12. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    NASA Astrophysics Data System (ADS)

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-07-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells.

  13. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells.

    PubMed

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  14. Enhancement of recombination process using silver and graphene quantum dot embedded intermediate layer for efficient organic tandem cells

    PubMed Central

    Ho, Nhu Thuy; Tien, Huynh Ngoc; Jang, Se-Joeng; Senthilkumar, Velusamy; Park, Yun Chang; Cho, Shinuk; Kim, Yong Soo

    2016-01-01

    High performance of organic tandem solar cell is largely dependent on transparent and conductive intermediate layer (IML). The current work reports the design and fabrication of an IML using a simple solution process. The efficiency of a homo-tandem device with poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester as an active layer and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/poly(ethylenimine) as an IML was initially found to be 3.40%. Further enhancement of the cell efficiency was achieved using silver nanoparticles (Ag-NPs) of different sizes and graphene quantum dot embedded IML. A maximum efficiency of 4.03% was achieved using 7 nm Ag-NPs that contribute to a better recombination process. Also, the performance of the tandem cell was solely based on the electrical improvements indicated by the current - voltage measurements, external quantum efficiency and impedance analysis. The use of Ag-NPs in the IML has been shown to lengthen the life time of electron-hole pairs in the device. This study thus paves way to develop such efficient IMLs for more efficient tandem solar cells. PMID:27453530

  15. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    DOE PAGES

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; et al

    2016-08-29

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used heremore » leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  16. Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

    NASA Astrophysics Data System (ADS)

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

    2016-08-01

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si0.8Ge0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

  17. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. PMID:27311112

  18. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis.

  19. Coarse, Intermediate and High Resolution Numerical Simulations of the Transition of a Tropical Wave Critical Layer to a Tropical Storm

    NASA Technical Reports Server (NTRS)

    Montgomery, M. T.; Dunkerton, T. J.; Wang, Z.

    2010-01-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from within the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the Kurihara and Tuleya problem examining the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km), intermediate (9 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of rotationally dominant region with minimal strain/shear deformation near the center of the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together.

  20. Orientation dependence of growth quality in strained-layer superlattices: A model-potential study of the Si-Ge system

    NASA Astrophysics Data System (ADS)

    Khor, K. E.; Das Sarma, S.

    1991-04-01

    Growth quality of Si-Ge/Si superlattices in various directions is studied using an empirical-potential-based approach. Kuan and Iyer found, experimentally, that growth morphology is best in the [100] direction while twin formation has substantial effects on growth in other directions. We show that twin formation does not relax misfit strain but instead allows growth to switch over to energetically favorable directions. We discuss the relative stability of strained Si-Ge superlattices for different orientations and the applicability of the results to III-V semiconductor superlattices. We also discuss experimental observations of long-range ordering which occur only in thick relaxed Si-Ge layers grown in the [100] direction and not in thin strained-layer superlattices grown in the same direction.

  1. Enhanced heteroepitaxial growth of CoCrPt-SiO{sub 2} perpendicular magnetic recording media on optimized Ru intermediate layers

    SciTech Connect

    Srinivasan, Kumar; Piramanayagam, S. N.

    2008-01-15

    The crystallographic growth, interfacial roughness, and magnetic properties of CoCrPt-SiO{sub 2} perpendicular magnetic recording media prepared on various types of Ru intermediate growth layers were systematically investigated based on high angle and omega offset x-ray diffraction scans, rocking curve scans, synchrotron radiation based grazing incidence reflectivity scans, and magneto-optical Kerr hysteresis loops. For samples that make use of one Ru growth layer, voltage bias applied on the Ru layer was seen to have two observable effects: (1) the dispersion in the Ru(00{center_dot}2) perpendicular texture increased, but that of the Co(00{center_dot}2) remained unchanged, leading to identical layered growth and (2) the in-plane a-lattice parameter of the Ru decreased leading to enhanced heteroepitaxy with the Co. There was no significant change in the Ru-Co interfacial roughness with changing the bias on the Ru layer. The bias effect can be used to optimize the design of the Ru intermediate layers. A scheme that makes use of two Ru growth layers consisting of a bottom Ru layer prepared under zero bias, which is inserted below a second Ru layer prepared under biased conditions, is shown to lead to significant benefits such as improved texture without affecting the magnetic properties. This is due to the different functional roles ascribed to each of the Ru growth layers.

  2. Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Kinoshita, Kyoichi; Nakatsuka, Osamu; Arai, Yasutomo; Taguchi, Keisuke; Tomioka, Hiroshi; Tanaka, Ryota; Yoda, Shinichi

    2013-04-01

    Compositionally uniform 2 and 10 mm diameter Si0.5Ge0.5 bulk crystals have been grown by the traveling liquidus-zone (TLZ) method. The TLZ method requires diffusion controlled mass transport in a melt and crystal size was limited for suppressing convection in a melt. For substrate use, however, larger diameter crystals are required. Increase of crystal diameter was challenged in spite of the concern that compositional homogeneity of grown crystals might be degraded due to faster convective flow in a larger diameter melt. As a result, however, increase of crystal diameter was possible up to 30 mm although single crystal length was limited to 5 mm. Si0.55Ge0.45 and Si0.6Ge0.4 bulk crystals with 30 mm diameter showed excellent compositional homogeneity and high crystallinity without mosaicity.

  3. Layered Seed-Growth of AgGe Football-like Microspheres via Precursor-Free Picosecond Laser Synthesis in Water

    PubMed Central

    Zhang, Dongshi; Gökce, Bilal; Notthoff, Christian; Barcikowski, Stephan

    2015-01-01

    Hybrid particles are of great significance in terms of their adjustable optical, electronic, magnetic, thermal and mechanical properties. As a novel technique, laser ablation in liquids (LAL) is famous for its precursor-free, “clean” synthesis of hybrid particles with various materials. Till now, almost all the LAL-generated particles originate from the nucleation-growth mechanism. Seed-growth of particles similar to chemical methods seems difficult to be achieved by LAL. Here, we not only present novel patch-joint football-like AgGe microspheres with a diameter in the range of 1 ~ 7 μm achievable by laser ablation in distilled water but also find direct evidences of their layered seed growth mechanism. Many critical factors contribute to the formation of AgGe microspheres: fast laser-generated plasma process provide an excellent condition for generating large amount of Ge and Ag ions/atoms, their initial nucleation and galvanic replacement reaction, while cavitation bubble confinement plays an important role for the increase of AgGe nuclei and subsequent layered growth in water after bubble collapse. Driven by work function difference, Ge acts as nucleation agent for silver during alloy formation. This new seed-growth mechanism for LAL technique opens new opportunities to develop a large variety of novel hybrid materials with controllable properties. PMID:26334136

  4. Layered Seed-Growth of AgGe Football-like Microspheres via Precursor-Free Picosecond Laser Synthesis in Water

    NASA Astrophysics Data System (ADS)

    Zhang, Dongshi; Gökce, Bilal; Notthoff, Christian; Barcikowski, Stephan

    2015-09-01

    Hybrid particles are of great significance in terms of their adjustable optical, electronic, magnetic, thermal and mechanical properties. As a novel technique, laser ablation in liquids (LAL) is famous for its precursor-free, “clean” synthesis of hybrid particles with various materials. Till now, almost all the LAL-generated particles originate from the nucleation-growth mechanism. Seed-growth of particles similar to chemical methods seems difficult to be achieved by LAL. Here, we not only present novel patch-joint football-like AgGe microspheres with a diameter in the range of 1 ~ 7 μm achievable by laser ablation in distilled water but also find direct evidences of their layered seed growth mechanism. Many critical factors contribute to the formation of AgGe microspheres: fast laser-generated plasma process provide an excellent condition for generating large amount of Ge and Ag ions/atoms, their initial nucleation and galvanic replacement reaction, while cavitation bubble confinement plays an important role for the increase of AgGe nuclei and subsequent layered growth in water after bubble collapse. Driven by work function difference, Ge acts as nucleation agent for silver during alloy formation. This new seed-growth mechanism for LAL technique opens new opportunities to develop a large variety of novel hybrid materials with controllable properties.

  5. Generation of conducting polymer-based heterojunctions, diodes, and capacitors using an intermediate-layer lithography method

    NASA Astrophysics Data System (ADS)

    Liu, Xinchuan; Chakraborty, Anirban; Parthasarathi, Ganga; Luo, Cheng

    2007-04-01

    In this work, conducting polymer-based heterojunctions, diodes and capacitors have been generated using an intermediate-layer lithography (ILL) approach which has been recently developed in our group. Polypyrrole (PPy) and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), Poly(methyl methacrylate) (PMMA) and aluminum were used as component materials in these devices. Compared with Si-based devices, conducting polymerbased devices have distinctive advantages of low weight and good flexibility, and may potentially replace the corresponding Si-based devices. A challenge is how to fabricate the conducting polymer-based microsystems. Most conducting polymers are sensitive to the environment, and their electrical properties tend to deteriorate over time due to overoxidation (air), moisture, high temperature and chemical alteration. The current fabrication techniques (e.g. lift-off, dry and wet etching processes) used in lithographic approaches involve ultra-violet, electron-beam, x-ray, gases (e.g., oxygen and nitrogen), DI water, and/or chemical solution (e.g. photoresist and acetone), making them improper to pattern conducting polymers. Since the ILL method does not involve aggressive chemistry in generation of patterns, it has been employed in this work to fabricate conducting polymer-based microdevices, particularly diodes and capacitors. In fabrication of the devices, multiple layers of polymers (e.g., PPy and PEDOT) and metals (e.g., Al) are coated on a PMMA sheet followed by the patterning with the insertion of Si molds. The detailed fabrication procedure and testing results are given in this paper.

  6. Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.

    2013-03-04

    The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

  7. High-Performanced Cathode with a Two-Layered R-P Structure for Intermediate Temperature Solid Oxide Fuel Cells.

    PubMed

    Huan, Daoming; Wang, Zhiquan; Wang, Zhenbin; Peng, Ranran; Xia, Changrong; Lu, Yalin

    2016-02-01

    Driven by the mounting concerns on global warming and energy crisis, intermediate temperature solid-oxide fuel cells (IT-SOFCs) have attracted special attention for their high fuel efficiency, low toxic gas emission, and great fuel flexibility. A key obstacle to the practical operation of IT-SOFCs is their sluggish oxygen reduction reaction (ORR) kinetics. In this work, we applied a new two-layered Ruddlesden-Popper (R-P) oxide, Sr3Fe2O7-δ (SFO), as the material for oxygen ion conducting IT-SOFCs. Density functional theory calculation suggested that SFO has extremely low oxygen ion formation energy and considerable energy barrier for O(2-) diffusion. Unfortunately, the stable SrO surface of SFO was demonstrated to be inert to O2 adsorption and dissociation reaction, and thus restricts its catalytic activity toward ORR. Based on this observation, Co partially substituted SFO (SFCO) was then synthesized and applied to improve its surface vacancy concentration to accelerate the oxygen adsorptive reduction reaction rate. Electrochemical performance results suggested that the cell using the SFCO single phase cathode has a peak power density of 685 mW cm(-2) at 650 °C, about 15% higher than those when using LSCF cathode. Operating at 200 mA cm(-2), the new cell using SFCO is quite stable within the 100-h' test.

  8. Interface Development in Cu-Based Structures Transient Liquid Phase (TLP) Bonded with Thin Al Foil Intermediate Layers

    NASA Astrophysics Data System (ADS)

    Chen, Ke; Meng, Wen Jin; Eastman, J. A.

    2014-08-01

    Proper bonding and assembly techniques are essential for fabrication of functional metal-based microdevices. Transient liquid phase (TLP) bonding is a promising technique for making enclosed metallic microchannel devices. In this paper, we report results of TLP bonding of Cu-based structures at temperatures between 823 K and 883 K (550 °C and 610 °C) with thin elemental Al foils as intermediate boding layers. In situ X-ray diffraction was utilized to examine the structure of Cu/Al interface in real time, resulting in a proposed sequence of structural evolution of the Cu/Al/Cu TLP bonding interface region. Three different types of bonding interface structures, the " γ 1 structure," the "eutectoid structure" ("E structure"), and the "E/ γ 1/E structure," were observed through electron microscopy, and related to the proposed sequence of interfacial structural evolution. Tensile fracture tests were conducted on TLP-bonded Cu/Al/Cu coupon assemblies. Hardness of the various phases within the bonding interface region was probed with instrumented nanoindentation. Results of mechanical testing were correlated to the structure of the bonding interface region. The present results provide an understanding of the structural evolution within the Cu/Al/Cu TLP bonding interface region, and offer guidance to future bonding of Cu-based microsystems.

  9. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    SciTech Connect

    Baidakova, N. A.; Bobrov, A. I.; Drozdov, M. N.; Novikov, A. V.; Pavlov, D. A.; Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F.

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  10. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  11. Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer

    NASA Astrophysics Data System (ADS)

    Kim, Yi-Tae; Lee, Jong-Lam; Mun, Jae Kyoung; Kim, Haecheon

    1997-11-01

    The Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor was investigated with the etch depth of an undoped GaAs/AlGaAs cap layer. The contact resistivity decreases from 9.5×10-5 to 2.3×10-6 Ω cm2 when the contacts were formed on a n-Al0.23Ga0.77As layer by removing the undoped cap layer. X-ray diffraction results show that the good ohmic contact is due to the formation of Au2Al as well as β-AuGa. Both compounds play a role to create group-III vacancies, followed by the incorporation of Ge into group-III vacancies, namely, creation of free electron below the contact. This results in the considerable elimination of contact resistivity by lowering the effective tunneling barrier.

  12. High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

    SciTech Connect

    Zhylik, A.; Benediktovich, A.; Ulyanenkov, A.; Guerault, H.; Myronov, M.; Dobbie, A.; Leadley, D. R.; Ulyanenkova, T.

    2011-06-15

    This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si{sub 1-x}Ge{sub x} heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.

  13. Coarse, intermediate and high resolution numerical simulations of the transition of a tropical wave critical layer to a tropical storm

    NASA Astrophysics Data System (ADS)

    Montgomery, M. T.; Wang, Z.; Dunkerton, T. J.

    2010-11-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from within the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the Kurihara and Tuleya problem examining the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km), intermediate (9 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of a rotationally dominant region with minimal strain/shear deformation near the center of the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together

  14. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  15. Ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) with layered structures

    NASA Astrophysics Data System (ADS)

    Khatun, Mansura; Stoyko, Stanislav S.; Mar, Arthur

    2016-06-01

    The four ternary arsenides ATt3As3 (A=K, Rb; Tt=Ge, Sn) were obtained by reaction of the elements at 600-650 °C. They adopt an orthorhombic structure (space group Pnma, Z=4, with cell parameters ranging from a=9.9931(11) Å, b=3.7664(4) Å, c=18.607(2) Å for KGe3As3 to a=10.3211(11) Å, b=4.0917(4) Å, c=19.570(2) Å for RbSn3As3) containing corrugated [Tt3As3] layers built from Tt-centred trigonal pyramids and tetrahedra forming five-membered rings decorated with As handles. They can be considered to be Zintl phases with Tt atoms in +4, +3, and +1 oxidation states. Band structure calculations predict that these compounds are semiconductors with narrow band gaps (0.71 eV in KGe3As3, 0.50 eV in KSn3As3).

  16. Biaxiality and Temperature Dependence of 3- and 4-layer Intermediate Smectic Phase Structures as Revealed by Resonant X-ray Scattering

    SciTech Connect

    Roberts,N.; Jaradat, S.; Hirst, L.; Wang, Y.; Wang, S.; Liu, Z.; Huang, C.; Bai, J.; Pindak, R.; Gleeson, H.

    2005-01-01

    High-resolution resonant X-ray diffraction experiments have been performed on free-standing films of two selenium-containing antiferroelectric liquid-crystal mixtures. Optical studies had indicated that both mixtures exhibit exceptionally wide intermediate phases, over a total range of >9 K. Through the structural information obtained from the resonant scattering data, we confirm that the intermediate phases of these mixtures show both 3-layer and 4-layer structural periodicities. Moreover, due to the stability of these phases, we report for the first time the temperature dependence of both the helicoidal pitch and distortion angle in the 3-layer phases deduced using the resonant X-ray technique. Analysis using an extension of the theory set out by Levelut and Pansu (LEVELUT A-M. and PANSU B., Phys. Rev. E, 60 (1999) 6803) shows that over the temperature ranges measured, the pitch changes linearly as a function of temperature whilst the distortion angle remains constant.

  17. Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

    NASA Astrophysics Data System (ADS)

    Shintri, Shashidhar; Rao, Sunil; Sarney, Wendy; Garg, Saurabh; Palosz, Witold; Trivedi, Sudhir; Wijewarnasuriya, Priyalal; Bhat, Ishwara

    2011-08-01

    We report an investigation of epitaxial germanium grown by chemical vapor deposition (CVD) on arsenic-terminated (211)Si, which is the preferred substrate in the USA for fabrication of night-vision devices based on mercury cadmium telluride (MCT) grown by molecular-beam epitaxy (MBE). The films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM), and x-ray diffraction (XRD). Arsenic passivation was found to be effective in preventing cross-contamination of unwanted residual species present inside the reactor chamber and also in prolonging the evolution of layer-by-layer growth of Ge for significantly more monolayers than on nonpassivated Si. The two-dimensional (2D) to three-dimensional (3D) transition resulted in Ge islands, the density and morphology of which showed a clear distinction between passivated and nonpassivated (211)Si. Finally, thick Ge layers (˜250 nm) were grown at 525°C and 675°C with and without As passivation, where the layers grown with As passivation resulted in higher crystal quality and smooth surface morphology.

  18. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  19. Pseudomorphic GeSn/Ge (001) heterostructures

    SciTech Connect

    Tonkikh, A. A.; Talalaev, V. G.; Werner, P.

    2013-11-15

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b{sub L} {>=} 1.47 eV.

  20. Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  1. Overturning circulation that ventilates the intermediate layer of the Sea of Okhotsk and the North Pacific: The role of salinity advection

    NASA Astrophysics Data System (ADS)

    Matsuda, Junji; Mitsudera, Humio; Nakamura, Tomohiro; Sasajima, Yuichiro; Hasumi, Hiroyasu; Wakatsuchi, Masaaki

    2015-03-01

    Dense Shelf Water (DSW) formation in the northwestern continental shelf of the Sea of Okhotsk is the beginning of the lower limb of the overturning circulation that ventilates the intermediate layer of the North Pacific Ocean. The upper limb consisting of surface currents in the Okhotsk Sea and the subarctic gyre has not been clarified. Using a high-resolution North Pacific Ocean model with a curvilinear grid as fine as 3 km × 3 km in the Sea of Okhotsk, we succeeded in representing the three-dimensional structure of the overturning circulation including the narrow boundary currents and flows through straits that constitute the upper limb, as well as the lower limb consisting of DSW formation and ventilation. In particular, pathways and time scales from the Bering Sea to the intermediate layer via the ventilation in the Sea of Okhotsk were examined in detail using tracer experiments. Further, we found that the overturning circulation that connects the surface and intermediate layer is sensitive to wind stress. In the case of strong winds, the coastal current under polynyas where DSW forms is intensified, and consequently diapycnal transport from the surface layer to the intermediate layer increases. Strong winds also induce a positive sea surface salinity anomaly in the subarctic region, causing a significant decrease in the density stratification and increase in the DSW salinity (i.e., density). These processes act together to produce intense overturning circulation and deep ventilation, which may subduct even to the bottom of the Sea of Okhotsk if the wind is strong.

  2. Lanthanide Germanate Cluster Organic Frameworks Based on {Ln8Ge12} Clusters: From One-Dimensional Chains to Two-Dimensional Layers and Three-Dimensional Frameworks.

    PubMed

    Li, Lei-Lei; Cao, Gao-Juan; Zhao, Jun-Wei; He, Huan; Yang, Bai-Feng; Yang, Guo-Yu

    2016-06-01

    Under hydrothermal conditions, six series of novel lanthanide (Ln) organogermanates (LnGs) [Ln8Ge12(μ3-O)24E12(H2O)16]·14H2O (Ln(3+) = Pr(3+), 1; Nd(3+), 2; Sm(3+), 3; Eu(3+), 4; Gd(3+), 5; one-dimensional (1-D) LnG cluster organic chain (LnGCOC)), {[Nd8Ge12(μ3-O)24E12(H2O)10](μ2-H2O)2[Nd8Ge12(μ3-O)24E12(H2O)16]}·18H2O (6, two-dimensional (2-D) planar LnG cluster organic layer (LnGCOL)), {[Ln2GeE(HO)2O(H2O)(CH3COO)2(CO3)]2[Ln8Ge12E12(μ3-O)24(H2O)10]}·6H2O (Ln(3+) = Pr(3+), 7; Nd(3+), 8; 2-D wave-shaped LnGCOL), [TbGeE(HO)2O(H2O)(pca)]2[Tb8Ge12E12(μ3-O)24(H2O)8]·10H2O (9, three-dimensional (3-D) LnG cluster organic framework (LnGCOF)), {([Nd(pza)2(H2O)2]2[Nd8Ge12E12(μ3-O)24(H2O)12])([Nd(pza)2]2[Nd8Ge12E12(Hpza)2(μ3-O)24(H2O)10])}·4OH·14H2O (10, 3-D LnGCOF), {[Nd8Ge12E12(μ3-O)24(H2O)10][Nd(pca)(pda)(H2O)]2}·12H2O (11, 3-D LnGCOF) and {[Nd8Ge12E12(μ3-O)24(H2O)10][Nd(pza)(pda)(H2O)]2}·12H2O (12, 3-D LnGCOF) (Hpca = 2-picolinic acid, H2pda = 2,6-pyridinedicarboxylic acid, Hpza = 2-pyrazinecarboxylic acid) were prepared by introducing the second auxiliary ligands into the organogermanate-lanthanide-oxide reaction system. The obtainment of these LnGs realized the utilization of the second auxiliary ligands inducing the assembly from 1-D LnGCOCs to 2-D LnGCOLs and 3-D LnGCOFs based on LnG cluster (LnGC) {Ln8Ge12E12(μ3-O)24(H2O)16}({Ln8Ge12}) units and Ln-organic complexes or organic ligand connectors. It should be noted that the well-organized structural constructions of 1-12 can be visualized as the gradual replacement of active water sites located at equatorial and polar positions on the hypothetical [Ln8Ge12(μ3-O)24E12(H2O)18] LnGC core with oxygen or nitrogen atoms from organic ligands. The solid-state luminescent properties of 2, 3, 4, 6, and 8-12 have been investigated at room temperature. PMID:27216949

  3. High-performance ultraviolet detection and visible-blind photodetector based on Cu2O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

    NASA Astrophysics Data System (ADS)

    Perng, Dung-Ching; Lin, Hsueh-Pin; Hong, Min-Hao

    2015-12-01

    This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu2O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu2O films. The Cu2O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 1013 Jones at a low bias of -0.1 V under a low UV light intensity of 24.9 μW/cm2. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of -0.5 V are 1.34 × 102 and 3.99, respectively. The UV-to-visible rejection ratios (R360 nm/R450 nm) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu2O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.

  4. High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

    SciTech Connect

    Perng, Dung-Ching

    2015-12-14

    This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{sup 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.

  5. High current density and high PVCR Si/Si 1-xGe x DQW RTD formed with quadruple-layer buffer

    NASA Astrophysics Data System (ADS)

    Maekawa, Hirotaka; Sano, Yoshihiro; Ueno, Chihiro; Suda, Yoshiyuki

    2007-04-01

    As a strain-relief relaxed Si 1-xGe x buffer that is used for type II band offset formation, we have proposed a quadruple-Si 1-xGe x-layer (QL) buffer where misfit dislocations are evenly distributed in the lower two interfaces and a buffer surface with good crystallinity was obtained. The crystallinity of the buffer surface does not degrade by high P doping with a P concentration of ˜10 19 cm -3 during the buffer growth. A vertical-type electron-tunneling Si/Si 1-xGe x resonant tunneling diode (RTD) formed with the highly P-doped QL buffer exhibits a high current density and a high peak-to-valley current ratio (PVCR) value. A planer-type electron-tunneling Si/ Si 1-xGe x RTD formed with the same buffer using tetramethyl ammonium hydroxide (TMAH) etching and polyimide insulator, which is better suited for device integration, also exhibits a high current density and a high PVCR value and good initial static performance reproducibility.

  6. Low-temperature formation of the FePt phase in the presence of an intermediate Au layer in Pt /Au /Fe thin films

    NASA Astrophysics Data System (ADS)

    Vladymyrskyi, I. A.; Gafarov, A. E.; Burmak, A. P.; Sidorenko, S. I.; Katona, G. L.; Safanova, N. Y.; Ganss, F.; Beddies, G.; Albrecht, M.; Makogon, Yu N.; Beke, D. L.

    2016-01-01

    Pt /Fe and Pt /Au /Fe layered films were deposited at room temperature by dc magnetron sputtering on Al2O3(0 0 0 1) single crystalline substrates and heat treated in vacuum at 330 °C with different durations (up to 62 h). It is shown by secondary neutral mass spectrometry depth profiling and x-ray diffraction that the introduction of an additional Au layer between Pt /Fe layers leads to enhanced intermixing and formation of the partially chemically ordered L10 FePt phase. The underlying diffusion processes can be explained by the grain boundary diffusion induced reaction layer formation mechanism. During the solid state reaction between Pt and Fe, the Au layer moves towards the substrate interface replacing the Fe layer. This was explained by the much faster diffusion of Fe, as compared to Pt, along the grain boundaries in Au. Enhancement of the process and formation of the ordered FePt phase in the presence of the Au intermediate layer were interpreted by the effect of stress accumulation during the grain boundary reactions: the disordered FePt phase formed initially at different Au and Pt grain boundaries can experience appropriate compressive stress along the {1 0 0} directions, which can initiate the formation of the chemically ordered L10 FePt phase.

  7. Effect of process temperature on structure and magnetic properties of perpendicularly magnetized D022-Mn3Ge thin films on a Cr buffer layer

    NASA Astrophysics Data System (ADS)

    Sugihara, Atsushi; Suzuki, Kazuya; Miyazaki, Terunobu; Mizukami, Shigemi

    2015-08-01

    We investigated the effect of post-annealing on the perpendicular magnetic anisotropy constant (Ku) and surface roughness (Ra) of Mn3Ge thin films grown at comparatively low temperatures (room temperature, 150, 200, and 250 °C) on Cr buffer layers. The films grown at ≥200 °C exhibit a D022-ordered crystal structure in an as-deposited state. The post-annealing process demonstrates differences in trends between the 200-°C-grown film and the 250-°C-grown film. The 200-°C-grown film displays significant degradation of Ku and an increase in Ra upon annealing at >300 °C because of its poor thermal durability, while the 250-°C-grown film is still intact even at 500 °C. The 250-°C-grown film post-annealed at 300 °C displays relatively high Ku while Ra remains low. It may be possible to grow D022-Mn3Ge with higher Ku and low Ra using a buffer-layer material with a lattice-matched crystal structure with D022-Mn3Ge and higher thermal durability than Cr.

  8. Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

    2002-01-01

    Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

  9. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    SciTech Connect

    Cariou, R.; Ruggeri, R.; Tan, X.; Nassar, J.; Roca i Cabarrocas, P.; Mannino, Giovanni

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  10. A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si1-xGe(x) Channel.

    PubMed

    Lee, Chang-Chun; Liu, Chuan-Hsi; Chen, Zih-Han; Tzeng, Tzai-Liang

    2015-03-01

    In this research, an n-type metal-oxide-semiconductor field effect transistor (nMOSFET) device with a SiGe channel exerted by the combination of a contact etching stop layer (CESL) and silicon germanium (Si1-xGe(x)) channel stressors is proposed. To explore the foregoing mechanical effect on the stress distribution of nMOSFETs within the channel region, a process-oriented simulated technique is adopted for the concerned nMOSFET device. The loading sources are a 1.1 GPa tensile CESL (t-CESL) and a SiGe channel structure constructed with 0%, 22.5%, and 25%, germanium (Ge) mole fractions. The results of the simulation show that the stress components of the Si1-xGe(x) channel evidently increase when the Ge mole fraction within a Si1-xGe(x) layer is increased. A pulling force exerted on the protruding gate structure by the CESL layer that causes dominant bending deformation and channel stress variation behaviors is a major reason for this phenomenon. Therefore, the degree of bending effect caused by the protruding gate structure is concluded as being the key to determining the trends and stress magnitudes of the Si1-xGe(x) device channel. PMID:26413636

  11. In-plane texturing control of Y-Ba-Cu-O thin films on polycrystalline substrates by ion-beam-modified intermediate buffer layers

    NASA Astrophysics Data System (ADS)

    Iijima, Y.; Onabe, K.; Futaki, N.; Tanabe, N.; Sadakata, N.; Kohno, O.; Ikeno, Y.

    1993-03-01

    Biaxially aligned YBCO thin films were successfully formed on polycrystalline Ni-based alloy by using ion-beam-modified yttria-stabilized-zirconia (YSZ) intermediate layers. YSZ layers were deposited by ion-beam-assisted deposition (IBAD) with concurrent off-axis ion beam bombardment. The YSZ 100-line axis was oriented normal to the substrate, and a YSZ 111-line axis was aligned to the bombarding ion beam axis. Explicit in-plane ordering was achieved on polycrystalline metallic substrates without epitaxial relationships. C-axis-oriented YBCO thin films were grown on those buffer layers, with controlled in-plane a- and b-axes, by pulsed laser deposition. At 77 K, 0 T and at 77 K, 0.6 T, 4.3 x 10 exp 5 A/sq cm and 1.1 x 10 exp 5 A/sq cm were achieved, respectively.

  12. Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

    NASA Astrophysics Data System (ADS)

    Kaufman-Osborn, Tobin; Chagarov, Evgueni A.; Park, Sang Wook; Sahu, Bhagawan; Siddiqui, Shariq; Kummel, Andrew C.

    2014-12-01

    Passivation, functionalization, and atomic layer deposition (ALD) via H2O2(g) and trimethylaluminum (TMA) dosing were studied on the clean Si0.6Ge0.4(001) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed with in-situ X-ray photoelectron spectroscopy (XPS) while density functional theory (DFT) was employed to model the bonding of H2O2(g) chemisorbates to the substrate. A room temperature saturation dose of H2O2(g) covers the surface with a monolayer of sbnd OH and sbnd O chemisorbates. XPS and DFT demonstrate that the room temperature H2O2/SiGe surface is composed of only Gesbnd OH and Gesbnd O bonds while annealing induces an atomic layer exchange bringing Si to the surface to bond with sbnd OH or sbnd O while pushing Ge subsurface. The resulting Sisbnd OH and Sisbnd O surface is optimal because it can be used to nucleate high-k ALD and Si dangling bonds are readily passivated by forming gas. After H2O2(g) functionalization, TMA dosing, and a subsequent 230 °C anneal, ordering along the dimer row direction is observed on the surface. STS verifies that the TMA/H2O2/SiGe surface has an unpinned Fermi level with no states in the band gap demonstrating the ability to serve as an ideal template for further high-k deposition.

  13. Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset

    SciTech Connect

    Brehm, Moritz; Grydlik, Martyna; Lichtenberger, Herbert; Hrauda, Nina; Fromherz, Thomas; Schaeffler, Friedrich; Bauer, Guenther; Montalenti, Francesco; Vastola, Guglielmo; Miglio, Leo; Beck, Matthew J.

    2009-11-15

    The commonly accepted Stranski-Krastanow model, according to which island formation occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological evolution an increasing island aspect ratio with volume. We report on an apparent violation of this thermodynamic understanding of island growth with deposition. In order to investigate the actual onset of three-dimensional islanding and the critical WL thickness in the Ge/Si(001) system, a key issue is controlling the Ge deposition with extremely high resolution [0.025 monolayer (ML)]. Atomic force microscopy and photoluminescence measurements on samples covering the deposition range 1.75-6.1 ML, taken along a Ge deposition gradient on 4 in. Si substrates and at different growth temperatures (T{sub g}), surprisingly reveal that for T{sub g}>675 deg. C steeper multifaceted domes apparently nucleate prior to shallow (105)-faceted pyramids, in a narrow commonly overlooked deposition range. The puzzling experimental findings are explained by a quantitative modeling of the total energy with deposition. We accurately matched ab initio calculations of layer and surface energies to finite-element method simulations of the elastic energy in islands, in order to compare the thermodynamic stability of different island shapes with respect to an increasing WL thickness. Close agreement between modeling and experiments is found, pointing out that the sizeable progressive lowering of the surface energy in the first few MLs of the WL reverts the common understanding of the SK growth onset. Strong similarities between islanding in SiGe and III/V systems are highlighted.

  14. Intermediate-Temperature Solid-Oxide Fuel Cells with a Gadolinium-Doped Ceria Anodic Functional Layer Deposited via Radio-Frequency Sputtering.

    PubMed

    Tanveer, Waqas Hassan; Ji, Sanghoon; Yu, Wonjong; Cho, Gu Young; Lee, Yoon Ho; Cha, Suk Won

    2015-11-01

    We investigated the effects of the insertion of a gadolinium-doped ceria (GDC) anodic functional layer (AFL) on the electrochemical performance of intermediate-temperature solid-oxide fuel cells (SOFCs). Fully stabilized yttria-stabilized zirconia (YSZ) was used as an oxygen-ion-conducting and support material. Nickel-Samaria-doped ceriathin film was used as an anode material, while screen-printed lanthanum strontium magnetite served as a cathode material. In order to enhance the interfacial reaction on the anode side, a GDC-AFL with a thickness of about 140 nm, deposited via radio-frequency sputtering, was inserted into the anode-electrolyte interface. SOFCs with and without a GDC-AFL were electrochemically characterized. In an intermediate temperature range of about 700 - 800 degrees C, the application of the GDC-AFL led to an increase in the peak power density of approximately 16%.

  15. Effect of TiON-MgO intermediate layer on microstructure and magnetic properties of L10 FePt-C-SiO2 films

    NASA Astrophysics Data System (ADS)

    Deng, J. Y.; Dong, K. F.; Peng, Y. G.; Ju, G. P.; Hu, J. F.; Chow, G. M.; Chen, J. S.

    2016-11-01

    The microstructure and magnetic properties of L10 FePt-C-SiO2 films grown on TiON-MgO intermediate layer were studied. TiON-MgO layer was deposited by co-sputtering TiN and MgO-TiO2 targets at 380 °C. With increasing MgO-TiO2 doping concentration, the contact angle between FePt grains with intermediate layer gradually increased, and it was close to 90° when the volume percentage of MgO-TiO2 reached 30%. At this condition, a high out-of-plane coercivity of 19.1 kOe was obtained, while the opening-up of in-plane M-H loop was very narrow. Moreover, it was found that the out-of-plane coercivity can be further improved to 21.6 kOe, by slightly increasing the percentage of MgO-TiO2 to 35 vol%.

  16. Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer

    NASA Astrophysics Data System (ADS)

    Wager, John F.; Robertson, John

    2011-05-01

    Metal-induced gap states (MIGS) modeling is used to elucidate the lack of Fermi level pinning at metal-insulator-Ge interfaces. Energy band diagram assessment reveals the existence of two dipoles at the metal-insulator and the insulator-semiconductor interface. The metal-insulator dipole modulates the metal-insulator interface electron barrier and the voltage drop across the insulator but does not affect the barrier to electron transport across the metal-insulator-Ge interface. Rather, this electron transport barrier is established by the metal-semiconductor work function difference and the insulator-semiconductor dipole. Thus, the lack of Fermi level pinning at a metal-insulator-Ge interface is attributed to the fact that the electron transport barrier does not depend upon MIGS screening. A quantitative formulation of this metal-insulator-semiconductor interface MIGS-based model confirms the lack of Fermi level pinning. Furthermore, it indicates that care must be taken when assessing experimental barrier height- work function data since the slope parameter should only be evaluated for the range of metal work function in which the semiconductor is in depletion. This range of work function for which the semiconductor is in depletion is quite limited for the case of a narrow bandgap semiconductor, such as Ge.

  17. Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

    PubMed

    Cemin, F; Bim, L T; Leidens, L M; Morales, M; Baumvol, I J R; Alvarez, F; Figueroa, C A

    2015-07-29

    Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

  18. Syntheses, structural variants and characterization of AInM‧S4 (A=alkali metals, Tl; M‧ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

    NASA Astrophysics Data System (ADS)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2016-06-01

    Ten AInM‧S4 (A=alkali metals, Tl; M‧= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS4(1-β), RbInGeS4(2), CsInGeS4(3-β), TlInGeS4(4-β), RbInSnS4(8-β) and CsInSnS4(9) compounds with three-dimensional BaGa2S4 structure and CsInGeS4(3-α) and TlInGeS4(4-α) compounds with a layered TlInSiS4 structure have tetrahedral [InM‧S4]- frameworks. On the other hand, LiInSnS4(5) with spinel structure and NaInSnS4(6), KInSnS4(7), RbInSnS4(8-α) and TlInSnS4(10) compounds with layered structure have octahedral [InM‧S4]- frameworks. NaInSnS4(6) and KInSnS4(7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases.

  19. Nature of an intermediate non-Fermi liquid state in Ge-substituted YbRh2Si2: Fermionized skyrmions, Lifshitz transition, skyrmion liquid, and Gruneisen ratio

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Seok

    2012-10-01

    We propose a skyrmion liquid state for the non-Fermi liquid (NFL) phase in Ge-substituted YbRh2Si2, where skyrmions form their Fermi surface, argued to result from the strongly coupled nature between skyrmions and itinerant electrons. The fermionized skyrmion theory identifies the antiferromagnetic (AF) transition with the Lifshitz transition, where the quantum critical point (QCP) is characterized by the dynamical critical exponent z=2. Nonlocal interactions between skyrmions allow a critical line above the AF QCP, which originates from the Kondo-coupling effect with itinerant electrons. This critical line is described by the skyrmion liquid state, which results in Landau damping for spin fluctuations, thus characterized by z=3. As a result, the Gruneisen ratio is predicted to change from ˜T-1 at the AF QCP to ˜T-2/3 in the NFL phase.

  20. Deduction of the temperature-dependent structure of the four-layer intermediate smectic phase using resonant X-ray scattering.

    PubMed

    Brimicombe, P D; Roberts, N W; Jaradat, S; Southern, C; Wang, S-T; Huang, C-C; Dimasi, E; Pindak, R; Gleeson, H F

    2007-07-01

    A binary mixture of an antiferroelectric liquid-crystal material containing a selenium atom and a highly chiral dopant is investigated using resonant X-ray scattering. This mixture exhibits a remarkably wide four-layer intermediate smectic phase, the structure of which is investigated over a temperature range of 16K. Analysis of the resonant X-ray scattering data allows accurate measurement of both the helicoidal pitch and the distortion angle as a function of temperature. The former decreases rapidly as the SmC* phase is approached, whilst the latter remains constant over the temperature range studied at 8 degrees +/-3 degrees. We also observe that the senses of the helicoidal pitch and the unit cell of the repeating four-layer structure are opposite in this mixture and that there is no pitch inversion over the temperature range studied.

  1. High efficiency Cu(In,Ga)Se{sub 2} thin film solar cells without intermediate buffer layers

    SciTech Connect

    Ramanathan, K.; Wiesner, H.; Asher, S.; Niles, D.; Bhattacharya, R.N.; Keane, J.; Contreras, M.A.; Noufi, R.

    1998-09-01

    The nature of the interface between CuInGaSe{sub 2} (CIGS) and the chemical bath deposited CdS layer has been investigated. The authors show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up an interfacial reaction with the possibility of an ion exchange occurring between Cd and Cu. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. The authors suggest that this aspect might be more important than the CdS layer in the formation of the junction. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction between CdS and CIGS. The authors use these ideas to develop methods for fabricating diodes without CdS or Cd.

  2. Structure and evolution of the cold intermediate layer in the southeastern part of the Baltic Sea by the field measurement data of 2004-2008

    NASA Astrophysics Data System (ADS)

    Stepanova, N. B.; Chubarenko, I. P.; Shchuka, S. A.

    2015-02-01

    The cold intermediate layer (CIL) was distinguished in the series of vertical CTD profiles obtained in 2004-2008 in the Gdansk basin of the Baltic Sea. The CIL is determined as the layer between the maximum absolute values of the vertical gradient of the water temperature during its decrease in the seasonal thermocline and the growth in the ranges of the permanent halocline. The CIL contains both homogenous and high-gradient sublayers (by various parameters); in particular, a layer of abnormally cold water of the temperature below that of the maximum density might be registered right up to July. Three stages were distinguished in the seasonal cycle of the CIL development: the formation by local mechanisms (March-April), the geo-strophic adjustment within the general thermohaline structure of the sea and slow modification (May-August), and the decay (September-January). The annual maximum thickness of the upper quasi-homogeneous layer, as well as that of the CIL, is by no means owing to the winter vertical mixing but to the conditions during the time of the early spring warming (early March). The complicated structure and character of the temporal variability point to the significant role of advection in the formation and evolution of the Baltic CIL.

  3. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  4. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    NASA Astrophysics Data System (ADS)

    Lin, Chung-Yi; Huang, Chih-Hsiung; Huang, Shih-Hsien; Chang, Chih-Chiang; Liu, C. W.; Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping

    2016-08-01

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  5. Production of the φ mesons at intermediate rapidity in Au+Au collisions at √sNN = 200 GeV

    NASA Astrophysics Data System (ADS)

    Pal, Dipali

    2007-10-01

    Study of the φ mesons produced in relativistic heavy-ion collisions can unfold properties of the hot and dense quark gluon matter produced in these reactions. Since the φ is a bound state of s and s quarks it is not subject to the canonical suppression of strangeness in p+p interactions and thus serves as a clean probe of strangeness enhancement in Au+Au collisions. The measurement of the φ-meson spectra, yield, and temperature parameter gives information on strangeness enhancement and the bulk properties of the partonic matter. The BRAHMS experiment at RHIC has measured particles produced in high luminosity Au+Au collisions at √sNN = 200 GeV over a broad range of rapidity and pT. Using the efficient tracking system and high resolution time of flight wall of the mid-rapidity spectrometer (MRS), we have measured the φ mesons in the K^+K^- decay channel at y ˜ 1. The first results of the φ -> K^+K^- measurements with focus on spectra and yield analysis will be presented.

  6. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    NASA Astrophysics Data System (ADS)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (<7 nm) on ˜1 nm ALD Al2O3 passivated Ge and Si substrates for applications in higher-k dielectric metal oxide semiconductor field effect transistors below 10 nm technology node. By applying synchrotron grazing incidence x-ray d-spacing maps, x-ray photoelectron spectroscopy (XPS), and angle-resolved XPS, we have identified a monoclinic to tetragonal phase transition with increasing ZrO2 content, elucidated the role of the Ge vs Si substrates in complete tetragonal phase formation (CTPF), and determined the interfacial characteristics of these technologically relevant films. The ZrO2 concentration required for CTPF is lower on Ge than on Si substrates (x ˜ 0.5 vs. x ˜ 0.86), which we attribute as arising from the growth of an ultra-thin layer of metal germanates between the Hf1-xZrxO2 and Al2O3/Ge, possibly during the first deposition and annealing cycle. Due to Ge-induced tetragonal phase stabilization, the interfacial metal germanates could act as a template for the subsequent preferential growth of the tetragonal Hf1-xZrxO2 phase following bottom-up crystallization during the DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  7. Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.

    PubMed

    Bae, Insung; Kim, Richard Hahnkee; Hwang, Sun Kak; Kang, Seok Ju; Park, Cheolmin

    2014-09-10

    We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer. By controlling exposure time and power of the scanned laser, ferroelectric patterns of one or two microns in size are fabricated with various shape. In the micropatterned regions, ferroelectric polymer crystals were efficiently controlled in both degree of the crystallinity and the molecular orientations. Nonvolatile memory devices with laser scanned ferroelectric polymer layers exhibited excellent device performance of large remnant polarization, ON/OFF current ratio and data retention. The results are comparable with devices containing ferroelectric films thermally annealed at least for 2 h, making our process extremely efficient for saving time. Furthermore, our approach can be conveniently combined with a number of other functional organic materials for the future electronic applications.

  8. Readout Durability Improvement of Super-Resolution Near-Field Structure Discs with PtOx-SiO2 Recording and GeNy Interfacial Layers

    NASA Astrophysics Data System (ADS)

    Shima, Takayuki; Yamakawa, Yuzo; Tominaga, Junji

    2007-02-01

    Two dielectric materials were added to a super-resolution near-field optical disc structure (super-RENS) to improve the readout durability. PtOx-SiO2 (Pt8.4Si21.1O70.5) layers showed O2 desorption for temperatures above 200 °C and were usable as write-once recording layers. The GeNy interfacial layers located between the Sb75Te25 and (ZnS)85(SiO2)15 layers suppressed degradation in the reflected light intensity from the disc, i.e., maintained the recorded structure as is, to at least 5× 104 readout cycles using a recorded pattern designed to accelerate disc deterioration. The carrier-to-noise ratio (CNR) obtained for 100-nm marks (laser wavelength: 405 nm, numerical aperture: 0.65) was about 43 dB. It was possible to readout 2.6× 105 cycles before the CNR decreased by 3 dB. This represents an improvement of a factor of 70 over the readout durability of a conventional super-RENS structure.

  9. Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.

    PubMed

    Bae, Insung; Kim, Richard Hahnkee; Hwang, Sun Kak; Kang, Seok Ju; Park, Cheolmin

    2014-09-10

    We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer. By controlling exposure time and power of the scanned laser, ferroelectric patterns of one or two microns in size are fabricated with various shape. In the micropatterned regions, ferroelectric polymer crystals were efficiently controlled in both degree of the crystallinity and the molecular orientations. Nonvolatile memory devices with laser scanned ferroelectric polymer layers exhibited excellent device performance of large remnant polarization, ON/OFF current ratio and data retention. The results are comparable with devices containing ferroelectric films thermally annealed at least for 2 h, making our process extremely efficient for saving time. Furthermore, our approach can be conveniently combined with a number of other functional organic materials for the future electronic applications. PMID:25127181

  10. Cobalt based layered perovskites as cathode material for intermediate temperature Solid Oxide Fuel Cells: A brief review

    NASA Astrophysics Data System (ADS)

    Pelosato, Renato; Cordaro, Giulio; Stucchi, Davide; Cristiani, Cinzia; Dotelli, Giovanni

    2015-12-01

    Nowadays, the cathode is the most studied component in Intermediate Temperature-Solid Oxide Fuel Cells (IT-SOFCs). Decreasing SOFCs operating temperature implies slow oxygen reduction kinetics and large polarization losses. Double perovskites with general formula REBaCo2O5+δ are promising mixed ionic-electronic conductors, offering a remarkable enhancement of the oxygen diffusivity and surface exchange respect to disordered perovskites. In this review, more than 250 compositions investigated in the literature were analyzed. The evaluation was performed in terms of electrical conductivity, Area Specific Resistance (ASR), chemical compatibility with electrolytes and Thermal Expansion Coefficient (TEC). The most promising materials have been identified as those bearing the mid-sized rare earths (Pr, Nd, Sm, Gd). Doping strategies have been analyzed: Sr doping on A site promotes higher electrical conductivity, but worsen ASR and TECs; B-site doping (Fe, Ni, Mn) helps lowering TECs, but is detrimental for the electrochemical properties. A promising boost of the electrochemical activity is obtained by simply introducing a slight Ba under-stoichiometry. Still, the high sensitivity of the electrochemical properties against slight changes in the stoichiometry hamper a conclusive comparison of all the investigated compounds. Opportunities for an improvement of double perovskite cathodes performance is tentatively foreseen in combining together the diverse effective doping strategies.

  11. Variability of GeV gamma-ray emission in QSO B0218+357 due to microlensing on intermediate size structures

    NASA Astrophysics Data System (ADS)

    Sitarek, J.; Bednarek, W.

    2016-06-01

    Strong gravitational lensing leads to an occurrence of multiple images, with different magnifications, of a lensed source. Those magnifications can in turn be modified by microlensing on smaller mass scales within the lens. Recently, measurements of the changes in the magnification ratio of the individual images have been proposed as a powerful tool for estimation of the size and velocity of the emission region in the lensed source. The changes of the magnification ratios in blazars PKS1830-211 and QSO B0218+357, if interpreted as caused by a microlensing on individual stars, put strong constraints on those two variables. These constraints are difficult to accommodate with the current models of gamma-ray emission in blazars. In this paper we study if similar changes in the magnification ratio can be caused by microlensing on intermediate size structures in the lensing galaxy. We investigate in details three classes of possible lenses: globular clusters (GCs), open clusters (OCs) and giant molecular clouds (GMCs). We apply this scenario to the case of QSO B0218+357. Our numerical simulations show that changes in magnifications with similar time-scales can be obtained for relativistically moving emission regions with sizes up to 0.01 pc in the case of microlensing on the cores of GCs or clumps in GMCs. From the density of such structures in spiral galaxies we estimate however that lensing in GMCs would be more common.

  12. Performance enhancement of a plasmonic structure comprising of indium oxide-zirconium dioxide-silver-zinc oxide intermediate layers working in visible and infrared wavelength region

    NASA Astrophysics Data System (ADS)

    Brahmachari, Kaushik; Ray, Mina

    2016-07-01

    Modeling of a fused silica (SiO2) glass prism-based plasmonic structure comprising of indium oxide (In2O3)-zirconium dioxide (ZrO2)-silver (Ag)-zinc oxide (ZnO) intermediate layers showing enhancement in sensitivity and figure-of-merit (FOM) in visible and infrared regime has been reported in this paper. Performance of the proposed plasmonic structure has been demonstrated in terms of sensitivity, half width (HW), detection accuracy (DA), and FOM parameters in visible (632.8 nm) and infrared (1200 nm) wavelength of light. High sensitivity of fused silica glass material, In2O3, ZnO films along with high DA and high FOM of Ag and inclusion of ZrO2 as an oxidation protective layer in between In2O3 and Ag have been the most exciting and advantageous features of our proposed structure. Simulated sensitivity values of our proposed structure were found to be 73.8 deg/RIU at 632.8 nm wavelength and it was found enhanced to 109.6 deg/RIU at 1200 nm wavelength and simulated FOM values were also found enhanced from 23.3544 RIU-1 at 632.8 nm to 62.6285 RIU-1 at 1200 nm wavelength for change in sensing layer refractive indices from 1.30 RIU to 1.35 RIU.

  13. Performance enhancement of a plasmonic structure comprising of indium oxide-zirconium dioxide-silver-zinc oxide intermediate layers working in visible and infrared wavelength region

    NASA Astrophysics Data System (ADS)

    Brahmachari, Kaushik; Ray, Mina

    2016-07-01

    Modeling of a fused silica (SiO2) glass prism-based plasmonic structure comprising of indium oxide (In2O3)-zirconium dioxide (ZrO2)-silver (Ag)-zinc oxide (ZnO) intermediate layers showing enhancement in sensitivity and figure-of-merit (FOM) in visible and infrared regime has been reported in this paper. Performance of the proposed plasmonic structure has been demonstrated in terms of sensitivity, half width (HW), detection accuracy (DA), and FOM parameters in visible (632.8 nm) and infrared (1200 nm) wavelength of light. High sensitivity of fused silica glass material, In2O3, ZnO films along with high DA and high FOM of Ag and inclusion of ZrO2 as an oxidation protective layer in between In2O3 and Ag have been the most exciting and advantageous features of our proposed structure. Simulated sensitivity values of our proposed structure were found to be 73.8 deg/RIU at 632.8 nm wavelength and it was found enhanced to 109.6 deg/RIU at 1200 nm wavelength and simulated FOM values were also found enhanced from 23.3544 RIU-1 at 632.8 nm to 62.6285 RIU-1 at 1200 nm wavelength for change in sensing layer refractive indices from 1.30 RIU to 1.35 RIU.

  14. Vertical distribution and diel migration of macrozooplankton in the St. Lawrence marine system (Canada) in relation with the cold intermediate layer thermal properties

    NASA Astrophysics Data System (ADS)

    Harvey, Michel; Galbraith, Peter S.; Descroix, Aurélie

    2009-01-01

    Vertical distribution of various species and stages of macrozooplankton (euphausiacea, chaetognatha, cnidaria, mysidacea, amphipoda) were determined for different times of the day and related to the physical environment. Stratified sampling with the BIONESS was carried out during seven cruises in spring and fall 1998, 2000, and 2001, and fall 1999, in two different habitats in the St. Lawrence marine system: the lower St. Lawrence Estuary and the NW Gulf of St. Lawrence. Our results indicate that the various macrozooplankton species were distributed throughout the whole water column including the surface layer, the cold intermediate layer (CIL), and the deep layer at different times of day and night in both areas during all periods. Moreover, three types of migrational patterns were observed within this zooplanktonic community: (1) nocturnal ascent by the whole population, (2) segregation into two groups; one which performed nocturnal accent and another which remained in the deep, and (3) no detectable migration. We also observed that the diel vertical migration (DVM) amplitude in most of the macrozooplankton species varied as a function of physical factors, in particular the spatio-temporal variations of the CIL thermal properties, including the upper and the lower limits of the CIL and the depth of the CIL core temperature. Finally, the different DVM patterns coupled with estuarine circulation patterns and bottom topography could place animals in different flow regimes by night and by day and contribute to their retention (aggregation) and/or dispersion in different areas, time of the day, and seasons.

  15. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    SciTech Connect

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-09-26

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers.

  16. Intermediate and high resolution numerical simulations of the transition of a tropical wave critical layer to a tropical storm

    NASA Astrophysics Data System (ADS)

    Montgomery, M. T.; Wang, Z.; Dunkerton, T. J.

    2009-12-01

    Recent work has hypothesized that tropical cyclones in the deep Atlantic and eastern Pacific basins develop from the cyclonic Kelvin cat's eye of a tropical easterly wave critical layer located equatorward of the easterly jet axis that typifies the trade wind belt. The cyclonic critical layer is thought to be important to tropical cyclogenesis because its cat's eye provides (i) a region of cyclonic vorticity and weak deformation by the resolved flow, (ii) containment of moisture entrained by the developing flow and/or lofted by deep convection therein, (iii) confinement of mesoscale vortex aggregation, (iv) a predominantly convective type of heating profile, and (v) maintenance or enhancement of the parent wave until the developing proto-vortex becomes a self-sustaining entity and emerges from the wave as a tropical depression. This genesis sequence and the overarching framework for describing how such hybrid wave-vortex structures become tropical depressions/storms is likened to the development of a marsupial infant in its mother's pouch, and for this reason has been dubbed the "marsupial paradigm". Here we conduct the first multi-scale test of the marsupial paradigm in an idealized setting by revisiting the problem of the transformation of an easterly wave-like disturbance into a tropical storm vortex using the WRF model. An analysis of the evolving winds, equivalent potential temperature, and relative vertical vorticity is presented from coarse (28 km) and high resolution (3.1 km) simulations. The results are found to support key elements of the marsupial paradigm by demonstrating the existence of a vorticity dominant region with minimal strain/shear deformation within the critical layer pouch that contains strong cyclonic vorticity and high saturation fraction. This localized region within the pouch serves as the "attractor" for an upscale "bottom up" development process while the wave pouch and proto-vortex move together. Implications of these findings are

  17. In Situ Synchrotron Based X-ray Fluorescence and Scattering Measurements During Atomic Layer Deposition: Initial Growth of HfO2 on Si and Ge Substrates

    SciTech Connect

    K Devloo-Casier; J Dendooven; K Ludwig; G Lekens; J DHaen; C Detavernier

    2011-12-31

    The initial growth of HfO{sub 2} was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO{sub 2} was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H{sub 2}O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

  18. Bacterial processes in the intermediate and deep layers of the Ionian Sea in winter 1999: Vertical profiles and their relationship to the different water masses

    NASA Astrophysics Data System (ADS)

    Zaccone, R.; Monticelli, L. S.; Seritti, A.; Santinelli, C.; Azzaro, M.; Boldrin, A.; La Ferla, R.; Ribera D'Alcalã, M.

    2003-09-01

    Dissolved and particulate organic carbon, bacterial biomass, microbial enzymatic activities (EEA: leucine aminopeptidase, β-glucosidase, and alkaline phosphatase), bacterial production, respiration rates, and bacterial growth efficiency were determined in 10 stations of the Ionian Sea (winter 1998-1999) with the aim of characterizing the recycling of biogenic carbon and phosphorus in the different water masses, previously identified on the basis of their hydrographical properties. All microbial activities decreased markedly with depth, with a sharp increase in the benthic boundary layer, where potential remineralization rates of phosphorus up to 1.03 μg P·dm-3d-1 and bacterial carbon production of 0.078 μg C·dm-3 d-1 were recorded. Those rates were close to the surface ones; the bacterial growth efficiency was also around 20%, similar to the surface value, sustaining the microbial food chain at the bottom. The daily hydrolysis of the organic carbon pool estimated by EEA varied from 0.67% (Ionian Surface Water) to 0.02% (Deep Water). Alkaline phosphatase activity was generally low in the intermediate and deep layers, in relation to the higher inorganic P content. The last facts support the hypothesis that deep waters of Ionian Sea, and in general of the entire Mediterranean basin, because of their young age, carry a larger amount of labile dissolved organic carbon, which reduces the need for a high recycling activity by bacterial community. As a matter of fact, a relatively higher activity per cell in carbon production rates was found in the deep layer where a large volume of the very recently formed Cretan Sea Outflow Water was present.

  19. Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

    NASA Astrophysics Data System (ADS)

    Petit, Matthieu; Hayakawa, Ryoma; Wakayama, Yutaka; Le Thanh, Vinh; Michez, Lisa

    2016-09-01

    Mn5Ge3C x compound is of great interest for spintronics applications. The various parameters of Au/Mn5Ge3C0.6/Ge(1 1 1) and Au/Mn5Ge3C0.6/δ-doped Ge(1 1 1) Schottky diodes were measured in the temperature range of 30-300 K by using current-voltage and capacitance-voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomalous behaviours were explained by Schottky barrier inhomogeneities and interpreted by means of a Gaussian distribution model of the Schottky barrier heights. Following this approach we show that the Mn5Ge3C0.6/Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn5Ge3C0.6/δ-doped Ge contact is depicted with two Gaussian distributions according to the temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.

  20. Mn5Ge3C0.6 /Ge(1 1 1) Schottky contacts tuned by an n-type ultra-shallow doping layer

    NASA Astrophysics Data System (ADS)

    Petit, Matthieu; Hayakawa, Ryoma; Wakayama, Yutaka; Le Thanh, Vinh; Michez, Lisa

    2016-09-01

    Mn5Ge3C x compound is of great interest for spintronics applications. The various parameters of Au/Mn5Ge3C0.6/Ge(1 1 1) and Au/Mn5Ge3C0.6/δ-doped Ge(1 1 1) Schottky diodes were measured in the temperature range of 30–300 K by using current–voltage and capacitance–voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomalous behaviours were explained by Schottky barrier inhomogeneities and interpreted by means of a Gaussian distribution model of the Schottky barrier heights. Following this approach we show that the Mn5Ge3C0.6/Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn5Ge3C0.6/δ-doped Ge contact is depicted with two Gaussian distributions according to the temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.

  1. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

    NASA Astrophysics Data System (ADS)

    Deleruyelle, D.; Putero, M.; Ouled-Khachroum, T.; Bocquet, M.; Coulet, M.-V.; Boddaert, X.; Calmes, C.; Muller, C.

    2013-01-01

    This paper shows that the well-know chalcogenide Ge2Sb2Te5 (GST) in its amorphous state may be advantageously used as solid electrolyte material to fabricate Conductive-Bridge Random Access Memory (CBRAM) devices. GST layer was sputtered on preliminary inkjet-printed silver lines acting as active electrode on either silicon or plastic substrates. Whatever the substrate, the resistance switching is unambiguously attested at a nanoscale by means of conductive-atomic force microscopy (C-AFM) using a Pt-Ir coated tip on the GST surface acting as a passive electrode. The resistance change is correlated to the appearance or disappearance of concomitant hillocks and current spots at the surface of the GST layer. This feature is attributed to the formation/dissolution of a silver-rich protrusion beneath the AFM tip during set/reset operation. Beside, this paper constitutes a step toward the elaboration of crossbar memory arrays on flexible substrates since CBRAM operations were demonstrated on W/GST/Ag crossbar memory cells obtained from an heterogeneous fabrication process combining physical deposition and inkjet-printing.

  2. Reduced GeO2 Nanoparticles: Electronic Structure of a Nominal GeOx Complex and Its Stability under H2 Annealing

    NASA Astrophysics Data System (ADS)

    Zhao, Jia; Yang, Linju; McLeod, John A.; Liu, Lijia

    2015-12-01

    A nominal GeOx (x ≤ 2) compound contains mixtures of Ge, Ge suboxides, and GeO2, but the detailed composition and crystallinity could vary from material to material. In this study, we synthesize GeOx nanoparticles by chemical reduction of GeO2, and comparatively investigate the freshly prepared sample and the sample exposed to ambient conditions. Although both compounds are nominally GeOx, they exhibit different X-ray diffraction patterns. X-ray absorption fine structure (XAFS) is utilized to analyse the detailed structure of GeOx. We find that the two initial GeOx compounds have entirely different compositions: the fresh GeOx contains large amorphous Ge clusters connected by GeOx, while after air exposure; the Ge clusters are replaced by a GeO2-GeOx composite. In addition, the two GeOx products undergo different structural rearrangement under H2 annealing, producing different intermediate phases before ultimately turning into metallic Ge. In the fresh GeOx, the amorphous Ge remains stable, with the GeOx being gradually reduced to Ge, leading to a final structure of crystalline Ge grains connected by GeOx. The air-exposed GeOx on the other hand, undergoes a GeO2→GeOx→Ge transition, in which H2 induces the creation of oxygen vacancies at intermediate stage. A complete removal of oxides occurs at high temperature.

  3. P/N InP solar cells on Ge wafers

    NASA Technical Reports Server (NTRS)

    Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

    1994-01-01

    Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

  4. Application of x-ray nano-particulate markers for the visualization of intermediate layers and interfaces using scanning electron microscopy

    NASA Astrophysics Data System (ADS)

    Bessudnova, Nadezda O.; Bilenko, David I.; Zakharevich, Andrey M.

    2011-10-01

    In this study the methodology of biological sample preparation for dental research using SEM/EDX has been elaborated. (1)The original cutting equipment supplied with 3D user-controlled sample fixation and an adjustable cooling system has been designed and evaluated. (2) A new approach to the root dentine drying procedure has been developed to preserve structure peculiarities of root dentine. (3) A novel adhesive system with embedded X-Ray nanoparticulate markers has been designed. (4)The technique allowing for visualization of bonding resins, interfaces and intermediate layers between tooth hard tissues and restorative materials of endodontically treated teeth using the X-ray nano-particulate markers has been developed and approved. These methods and approaches were used to compare the objective depth of penetration of adhesive systems of different generations in root dentine. It has been shown that the depth of penetration in dentine is less for adhesive systems of generation VI in comparison with bonding resins of generation V, which is in agreement with theoretical evidence. The depth of penetration depends on the correlation between the direction of dentinal tubules, bonding resin delivery and gravity.

  5. Application of x-ray nano-particulate markers for the visualization of intermediate layers and interfaces using scanning electron microscopy

    NASA Astrophysics Data System (ADS)

    Bessudnova, Nadezda O.; Bilenko, David I.; Zakharevich, Andrey M.

    2012-03-01

    In this study the methodology of biological sample preparation for dental research using SEM/EDX has been elaborated. (1)The original cutting equipment supplied with 3D user-controlled sample fixation and an adjustable cooling system has been designed and evaluated. (2) A new approach to the root dentine drying procedure has been developed to preserve structure peculiarities of root dentine. (3) A novel adhesive system with embedded X-Ray nanoparticulate markers has been designed. (4)The technique allowing for visualization of bonding resins, interfaces and intermediate layers between tooth hard tissues and restorative materials of endodontically treated teeth using the X-ray nano-particulate markers has been developed and approved. These methods and approaches were used to compare the objective depth of penetration of adhesive systems of different generations in root dentine. It has been shown that the depth of penetration in dentine is less for adhesive systems of generation VI in comparison with bonding resins of generation V, which is in agreement with theoretical evidence. The depth of penetration depends on the correlation between the direction of dentinal tubules, bonding resin delivery and gravity.

  6. Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode.

    PubMed

    Denneulin, T; Cooper, D; Rouviere, J L

    2014-07-01

    Dark-field electron holography (DFEH) is a powerful transmission electron microscopy technique for mapping strain with nanometer resolution and high precision. However the technique can be difficult to set up if some practical steps are not respected. In this article, several measurements were performed on thin Si(1-x)Gex layers using (004) DFEH in Lorentz mode. Different practical aspects are discussed such as sample preparation, reconstruction of the holograms and interpretation of the strain maps in terms of sensitivity and accuracy. It was shown that the measurements are not significantly dependent on the preparation tool. Good results can be obtained using both FIB and mechanical polishing. Usually the most important aspect is a precise control of the thickness of the sample. A problem when reconstructing (004) dark-field holograms is the relatively high phase gradient that characterises the strained regions. It can be difficult to perform reconstructions with high sensitivity in both strained and unstrained regions. Here we introduce simple methods to minimise the noise in the different regions using a specific mask shape in Fourier space or by combining several reconstructions. As a test, DFEH was applied to the characterization of eight Si(1-x)Gex samples with different Ge concentrations. The sensitivity of the strain measured in the layers varies between 0.08% and 0.03% for spatial resolutions of 3.5-7 nm. The results were also compared to finite element mechanical simulations. A good accuracy of ±0.1% between experiment and simulation was obtained for strains up to 1.5% and ±0.25% for strains up to 2.5%.

  7. Strain-conserving doping of a pseudomorphic metastable Ge{sub 0.06}Si{sub 0.94} layer on Si(100) by low-dose BF{sub 2}{sup +} implantation

    SciTech Connect

    Im, S.; Eisen, F.; Nicolet, M.; Tanner, M.O.; Wang, K.L.; Theodore, N.D.

    1997-02-01

    A thick (260 nm) pseudomorphic metastable {ital n}-type Ge{sub 0.06}Si{sub 0.94} layer grown by molecular beam epitaxy on an {ital n}-type Si(100) substrate was implanted at room temperature with 70 keV BF{sub 2}{sup +} ions to a dose of 3{times}10{sup 13} cm{sup {minus}2}, so that a p{minus}n junction was formed in the GeSi layers. The samples were subsequently annealed for 10{endash}40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV {sup 4}He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800{degree}C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of {ital p}-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped {ital p}-type GeSi films which is less than unity while the Hall factor of a heavily doped {ital p}-type Si or {ital n}-type GeSi film is close to unity. When annealed at 900{degree}C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s. {copyright} {ital 1997 American Institute of Physics.}

  8. Efficiency enhancement using a Zn1‑ x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc–germanium-oxide (Zn1‑ x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1‑ x Ge x -O and Cu2O:Na. The optimal value of x in Zn1‑ x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  9. Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe2SiS4 and Fe2GeS4 Photovoltaics

    SciTech Connect

    Orefuwa, Samuel A.; Lai, Cheng-Yu; Dobson, Kevin D.; Ni, Chaoying; Radu, Daniela R.

    2014-05-12

    Fe2SiS4 and Fe2GeS4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe2SiS4 or Fe2GeS4 have been reported to date. In the presented work, nanoprecursors to Fe2SiS4 and Fe2GeS4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe2SiS4 and Fe2GeS4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe2SiS4 and Fe2GeS4 as solar absorber material is presented.

  10. The performance of La0.6Sr1.4MnO4 layered perovskite electrode material for intermediate temperature symmetrical solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Zhou, Jun; Chen, Gang; Wu, Kai; Cheng, Yonghong

    2014-12-01

    A layered perovskite electrode material, La0.6Sr1.4MnO4+δ (LSMO4), has been studied for intermediate temperature symmetrical solid oxide fuel cells (IT-SSOFCs) on La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte. The chemical compatibility tests indicate that no reaction occurred between LSMO4 oxide and LSGM electrolyte at temperature up to 1000 °C both in air and 5% H2. The lower conductivity in 5% H2 and higher conduction activation energy than those in air would be caused by poorer overlap of both σ and π bonds. DFT + U calculations also show that oxygen vacancies which formed in reducing atmosphere may block the 3D hopping path for electrons or holes through Mn-O-Mn chains. For LSMO4 electrode, SEM results indicate that the electrode formed good contact with the electrolyte after being sintered at 900 °C for 2 h. At 800 °C, the polarization resistance of the LSMO4 cathode is about 0.87 Ω cm2 in air, while the polarization resistance of the LSMO4 anode is about 2.07 Ω cm2 in 5% H2. LSMO4 exhibits better electrochemical activity for oxygen reduction than that for hydrogen oxidation. A cell with LSGM electrolyte, LSMO4-LSGM mixture as anode and cathode simultaneously displays a maximum power density of 59 mW cm-2 at 800 °C.

  11. siRNA delivery from triblock copolymer micelles with spatially-ordered compartments of PEG shell, siRNA-loaded intermediate layer, and hydrophobic core.

    PubMed

    Kim, Hyun Jin; Miyata, Kanjiro; Nomoto, Takahiro; Zheng, Meng; Kim, Ahram; Liu, Xueying; Cabral, Horacio; Christie, R James; Nishiyama, Nobuhiro; Kataoka, Kazunori

    2014-05-01

    Hydrophobized block copolymers have widely been developed for construction of polymeric micelles for stable delivery of nucleic acids as well as anticancer drugs. Herein, we elaborated an A-B-C type of triblock copolymer featuring shell-forming A-segment, nucleic acid-loading B-segment, and stable core-forming C-segment, directed toward construction of a three-layered polymeric micelle as a small interfering RNA (siRNA) vehicle. The triblock copolymer was prepared with nonionic and hydrophilic poly(ethylene glycol) (PEG), cationic poly(l-lysine) (PLys), and poly{N-[N-(2-aminoethyl)-2-aminoethyl]aspartamide} [PAsp(DET)] bearing a hydrophobic dimethoxy nitrobenzyl ester (DN) moiety in the side chain [PEG-PLys-PAsp(DET-DN)]. The resulting triblock copolymers spontaneously formed sub-100 nm-sized polymeric micelles with a hydrophobic PAsp(DET-DN) core as well as PEG shell in an aqueous solution. This micelle was able to incorporate siRNA into the intermediate PLys layer, associated with slightly reduced size and a narrow size distribution. The triblock copolymer micelles (TCMs) stably encapsulated siRNA in serum-containing medium, whereas randomly hydrophobized triblock copolymer [PEG-PLys(DN)-PAsp(DET-DN)] control micelles (RCMs) gradually released siRNA with time and non-PEGylated diblock copolymer [PLys-PAsp(DET-DN)] control micelles (DCMs) immediately formed large aggregates. The TCMs thus induced appreciably stronger sequence-specific gene silencing in cultured cancer cells, compared to those control micelles. The siRNA delivery with TCMs was further examined in terms of cellular uptake and intracellular trafficking. The flow cytometric analysis revealed that the cellular uptake of TCMs was more efficient than that of RCMs, but less efficient than that of DCMs. The intracellular trafficking study using confocal laser scanning microscopy combined with fluorescence resonance energy transfer (FRET) revealed that the TCMs could readily release the siRNA payload

  12. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect

    Shibayama, Shigehisa; Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  13. Development of wider bandgap n-type a-SiOx:H and μc-SiOx:H as both doped and intermediate reflecting layer for a-Si:H/ a-Si1-xGex:H tandem solar cells

    NASA Astrophysics Data System (ADS)

    Chen, Po-Wei; Chen, Pei-Ling; Tsai, Chuang-Chuang

    2016-07-01

    In this work, we developed a-SiOx:H(n) and μc-SiOx:H(n) films as n-type layer, intermediate reflecting layer (IRL), and back-reflecting layer (BRL) to improve the light management in silicon thin-film solar cells. In the development of SiOx:H films, by properly adjusting the oxygen content of the films, the optical bandgap of μc-SiOx:H(n) can be increased while maintaining sufficient conductivity. Similar effect was found for a-SiOx:H(n). In a-Si:H single-junction cells, employing a-SiOx:H(n) as the replacement for a-Si:H(n) resulted in a relative efficiency enhancement of 11.4% due to the reduced parasitic absorption loss. We have also found that μc-SiOx:H(n) can replace back ITO layer as BRL, leading to a relative efficiency gain of 7.6%. For a-Si:H/ a-Si1- x Ge x:H tandem cell, employing μc-SiOx:H(n) as IRL increased the current density of top cell. In addition, employing a-SiOx:H(n) as a replacement of a-Si:H(n) in the top cell increased the current density of bottom cell due to the reduction of absorption loss. Combining all the improvements, the a-Si:H/ a-Si1-xGex:H tandem cell with efficiency of 9.2%, V OC = 1.58 V, J SC = 8.43 mA/cm2, and FF = 68.4% was obtained. [Figure not available: see fulltext.

  14. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V.; Averyanov, D. V.; Vasil’evskii, I. S.

    2015-01-15

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

  15. Kinetics of stabilised Criegee intermediates derived from alkene ozonolysis: reactions with SO2, H2O and decomposition under boundary layer conditions.

    PubMed

    Newland, Mike J; Rickard, Andrew R; Alam, Mohammed S; Vereecken, Luc; Muñoz, Amalia; Ródenas, Milagros; Bloss, William J

    2015-02-14

    The removal of SO2 in the presence of alkene-ozone systems has been studied for ethene, cis-but-2-ene, trans-but-2-ene and 2,3-dimethyl-but-2-ene, as a function of humidity, under atmospheric boundary layer conditions. The SO2 removal displays a clear dependence on relative humidity for all four alkene-ozone systems confirming a significant reaction for stabilised Criegee intermediates (SCI) with H2O. The observed SO2 removal kinetics are consistent with relative rate constants, k(SCI + H2O)/k(SCI + SO2), of 3.3 (±1.1) × 10(-5) for CH2OO, 26 (±10) × 10(-5) for CH3CHOO derived from cis-but-2-ene, 33 (±10) × 10(-5) for CH3CHOO derived from trans-but-2-ene, and 8.7 (±2.5) × 10(-5) for (CH3)2COO derived from 2,3-dimethyl-but-2-ene. The relative rate constants for k(SCI decomposition)/k(SCI + SO2) are -2.3 (±3.5) × 10(11) cm(-3) for CH2OO, 13 (±43) × 10(11) cm(-3) for CH3CHOO derived from cis-but-2-ene, -14 (±31) × 10(11) cm(-3) for CH3CHOO derived from trans-but-2-ene and 63 (±14) × 10(11) cm(-3) for (CH3)2COO. Uncertainties are ±2σ and represent combined systematic and precision components. These values are derived following the approximation that a single SCI is present for each system; a more comprehensive interpretation, explicitly considering the differing reactivity for syn- and anti-SCI conformers, is also presented. This yields values of 3.5 (±3.1) × 10(-4) for k(SCI + H2O)/k(SCI + SO2) of anti-CH3CHOO and 1.2 (±1.1) × 10(13) for k(SCI decomposition)/k(SCI + SO2) of syn-CH3CHOO. The reaction of the water dimer with CH2OO is also considered, with a derived value for k(CH2OO + (H2O)2)/k(CH2OO + SO2) of 1.4 (±1.8) × 10(-2). The observed SO2 removal rate constants, which technically represent upper limits, are consistent with decomposition being a significant, structure dependent, sink in the atmosphere for syn-SCI.

  16. A numerical study of the relationship between atmospheric forcing, cold intermediate layer generation and primary production in the Black Sea over interannual time scales

    NASA Astrophysics Data System (ADS)

    Cannaby, Heather

    2015-04-01

    The Cold Intermediate Layer (CIL) is a characteristic feature of the Black Sea formed during winter when cool surface waters penetrate to the depth of the upper halocline. The CIL typically persists throughout the year and is defined at its upper and lower boundaries by the 8 °C isotherm. CIL formation is concentrated in the central regions of the Black Sea basin and on the NW shelf, although the relative contribution of these two sources is still debated. Previous studies have suggested that CIL formation on the NW shelf may play an important role in the subduction of nutrient rich shelf waters into the upper pycnocline, thus removing nutrients from the euphotic zone and impacting rates of primary production. A 20 year hydrodynamic model (Princeton Ocean Model) simulation extending from 1990-2009 and forced by the DMI atmospheric reanalysis is used to investigate (i) interactions between atmospheric forcing and regional CIL formation and (ii) rates of CIL formation and the subduction of NW shelf waters to depths below the euphotic zone. Model skill in simulating CIL characteristics is demonstrated. Results suggest that the ratio of CIL waters formed in the central regions of the Black Sea basin and on the NW shelf varies considerably from one year to another due to sub-domain scale atmospheric variability. Exceptionally warm years when CIL formation is considerably reduced are associated with anomalously high concentrations of fresh riverine water residing in the euphotic zone, and hence a higher percentage of riverine nutrients are available to fuel primary production. Years when anomalously large volumes of CIL water are formed on the NW shelf are not necessarily cold years when considering the domain as a whole. During these years an anomalously high volume of riverine water is subducted into the CIL where it remains trapped throughout the following spring and summer. This study provides a physics based explanation for the occurrence of higher phytoplankton

  17. Kinetics of stabilised Criegee intermediates derived from alkene ozonolysis: reactions with SO2, H2O and decomposition under boundary layer conditions.

    PubMed

    Newland, Mike J; Rickard, Andrew R; Alam, Mohammed S; Vereecken, Luc; Muñoz, Amalia; Ródenas, Milagros; Bloss, William J

    2015-02-14

    The removal of SO2 in the presence of alkene-ozone systems has been studied for ethene, cis-but-2-ene, trans-but-2-ene and 2,3-dimethyl-but-2-ene, as a function of humidity, under atmospheric boundary layer conditions. The SO2 removal displays a clear dependence on relative humidity for all four alkene-ozone systems confirming a significant reaction for stabilised Criegee intermediates (SCI) with H2O. The observed SO2 removal kinetics are consistent with relative rate constants, k(SCI + H2O)/k(SCI + SO2), of 3.3 (±1.1) × 10(-5) for CH2OO, 26 (±10) × 10(-5) for CH3CHOO derived from cis-but-2-ene, 33 (±10) × 10(-5) for CH3CHOO derived from trans-but-2-ene, and 8.7 (±2.5) × 10(-5) for (CH3)2COO derived from 2,3-dimethyl-but-2-ene. The relative rate constants for k(SCI decomposition)/k(SCI + SO2) are -2.3 (±3.5) × 10(11) cm(-3) for CH2OO, 13 (±43) × 10(11) cm(-3) for CH3CHOO derived from cis-but-2-ene, -14 (±31) × 10(11) cm(-3) for CH3CHOO derived from trans-but-2-ene and 63 (±14) × 10(11) cm(-3) for (CH3)2COO. Uncertainties are ±2σ and represent combined systematic and precision components. These values are derived following the approximation that a single SCI is present for each system; a more comprehensive interpretation, explicitly considering the differing reactivity for syn- and anti-SCI conformers, is also presented. This yields values of 3.5 (±3.1) × 10(-4) for k(SCI + H2O)/k(SCI + SO2) of anti-CH3CHOO and 1.2 (±1.1) × 10(13) for k(SCI decomposition)/k(SCI + SO2) of syn-CH3CHOO. The reaction of the water dimer with CH2OO is also considered, with a derived value for k(CH2OO + (H2O)2)/k(CH2OO + SO2) of 1.4 (±1.8) × 10(-2). The observed SO2 removal rate constants, which technically represent upper limits, are consistent with decomposition being a significant, structure dependent, sink in the atmosphere for syn-SCI. PMID:25562069

  18. Light absorption enhancement in Ge nanomembrane and its optoelectronic application.

    PubMed

    Kim, Munho; Liu, Shih-Chia; Kim, Tong June; Lee, Jaeseong; Seo, Jung-Hun; Zhou, Weidong; Ma, Zhenqiang

    2016-07-25

    In this study, the light absorption property of Ge nanomembrane (Ge NM), which incorporates hydrogen (H), in near-infrared (NIR) wavelength range was analyzed. Due to the presence of a large amount of structural defects, the light absorption coefficient of the Ge layer becomes much higher (10 times) than that of bulk Ge in the wavelength range of 1000 ~1600 nm. Increased light absorption was further measured from released Ge NM that has H incorporation in comparison to that of bulk Ge, proving the enhanced light absorption coefficient of H incorporated Ge. Finally, metal-semiconductor-metal (MSM) photodetectors were demonstrated using the H incorporated Ge on GeOI.

  19. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    NASA Astrophysics Data System (ADS)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  20. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  1. Layered hydride CaNiGeH with a ZrCuSiAs-type structure: crystal structure, chemical bonding, and magnetism induced by Mn doping.

    PubMed

    Liu, Xiaofeng; Matsuishi, Satoru; Fujitsu, Satoru; Ishigaki, Toru; Kamiyama, Takashi; Hosono, Hideo

    2012-07-18

    Stimulated by the discovery of the iron oxypnictide superconductor with ZrCuSiAs-type structure in 2008, extensive exploration of its isostructural and isoelectronic compounds has started. These compounds, including oxides, fluorides, and hydrides, can all be simply recognized as valence compounds for which the octet rule is valid. We report herein the first example of a ZrCuSiAs-type hydride, CaNiGeH, which violates the octet rule. This hydride was synthesized by hydrogenation of the CeFeSi-type compound CaNiGe under pressurized hydrogen. Powder diffraction and theoretical simulation confirm that H enters into the interstitial position of the Ca(4) tetrahedron, leading to notable anisotropic expansion of the unit cell along the c axis. Density functional theory calculations indicate the modification of the chemical bonding and formation of ionic Ca-H bond as a result of hydrogen insertion. Furthermore, CaNiGeH shows Pauli paramagnetism and metallic conduction similar to that of CaNiGe, but its carrier type changes to hole and the carrier density is drastically reduced as compared to CaNiGe. Mn-doping at the Ni site introduces magnetism to both the parent compound and the hydride. The measurement demonstrates that hydrogenation of CaNi(1-x)Mn(x)Ge reduces ferromagnetic ordering of Mn ions and induces huge magnetic hysteresis, whereas the spin glass state observed for the parent compound is preserved in the hydride. The hydrogenation-induced changes in the electric and magnetic properties are interpreted in terms of development of two-dimensionality in crystal structure as well as electronic state.

  2. PrBa0.5Sr0.5Co2O5+δ layered perovskite cathode for intermediate temperature solid oxide fuel cells

    SciTech Connect

    Ding, Hanping; Xue, Xingjian

    2010-02-06

    Layered perovskite oxides have ordered A-cations localizing oxygen vacancies, and may potentially improve oxygen ion diffusivity and surface exchange coefficient. The A-site-ordered layered perovskite PrBa0.5Sr0.5Co2O5+δ (PBSC) was evaluated as new cathode material for intermediate temperature solid oxide fuel cells (IT-SOFCs). The material was characterized using electrochemical impedance spectroscopy in a symmetrical cell system (PBSC/Ce0.9Sm0.1O1.9 (SDC)/PBSC), exhibiting excellent performance in the intermediate temperature range of 500–700 °C. An area-specific-resistance (ASR) of 0.23 Ω cm2 was achieved at 650 °C for cathode polarization. The low activation energy (Ea) 124 kJ mol-1 is comparable to that of La0.8Sr0.2CoO3-δ. A laboratory-scaled SDC-based tri-layer cell of Ni-SDC/SDC/PBSC was tested in intermediate temperature conditions of 550 to 700 °C. A maximum power density of 1045 mW cm-2 was achieved at 700 °C. The interfacial polarization resistance is as low as 0.285, 0.145, 0.09 and 0.05 Ω cm2 at 550, 600, 650 and 700 °C, respectively. Layered perovskite PBSC shows promising performance as cathode material for IT-SOFCs.

  3. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs

    NASA Astrophysics Data System (ADS)

    Qin, Changliang; Wang, Guilei; Kolahdouz, M.; Luo, Jun; Yin, Huaxing; Yang, Ping; Li, Junfeng; Zhu, Huilong; Chao, Zhao; Ye, Tianchun; Radamson, Henry H.

    2016-10-01

    A complete mapping of 14 nm FinFETs performance over 200 mm wafers was performed and the pattern dependency of SiGe selective growth was calculated using an empirical kinetic molecule model for the reactant precursors. The transistor structures were analyzed by conventional characterization tools and their performance was simulated by considering the process related variations. The applied model presents for the first time a powerful tool for transistor community to predict the SiGe profile and strain modulating over a processed wafer, independent of wafer size.

  4. Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co2FeGa0.5Ge0.5/Ag/Co2FeGa0.5Ge0.5 current-perpendicular-to-plane pseudo spin valves

    NASA Astrophysics Data System (ADS)

    Jung, J. W.; Sakuraba, Y.; Sasaki, T. T.; Miura, Y.; Hono, K.

    2016-03-01

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co2FeGa0.5Ge0.5 (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co2FeGa0.5Ge0.5/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm2) and 77% (31 mΩ μm2) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

  5. Effects of CrRu-SiO{sub x} underlayer with MgO intermediate layer on the microstructure and magnetic properties of FePt-C thin film

    SciTech Connect

    Li, H. H.; Hu, J. F.; Ju, G.; Chow, G. M.; Chen, J. S.

    2011-04-01

    The effect of the CrRu-SiO{sub x} underlayer with different doping concentrations and the thickness of the CrRu underlayer on the microstructure and magnetic properties of FePt-C films were investigated. FePt films exhibited L1{sub 0} (001) texture at various SiO{sub x} doping concentrations. The coercivities were as large as 28 kOe and the slope of M-H loop at coercivity was approximately equal to 1, suggesting that FePt grains were well exchange decoupled. Grain size was only slightly reduced after introducing the CrRu-SiO{sub x} underlayer. But the contact angle between the FePt grains and the MgO intermediate layer around 135 deg. indicated the a MgO intermediate layer was not favored for smaller grains to obtain good L1{sub 0} (001) texture. X-ray photoelectron spectroscopy in-depth profile showed that Si diffused into a whole FePt-C layer and C diffused to the film surface.

  6. [Intermediate gastric cancer].

    PubMed

    Fontán, A N; Marzano, C A; Martínez, M M; Palau, G; Rubio, H H

    1980-01-01

    Gastric Cancer comprises two basic types: Advanced Gastric Cancer (A.G.C.) and Early Gastric Cancer (E.G.C.). A.G.C. extends beyond the proper muscle layer with a 5 to 17%, five years survival rate after surgery. E.G.C. does not extend beyond the submucosa (with or without metastasis to regional lymph nodes) and has a 80 - 95% five years survival rate. Intermediate Gastric Cancer, PM G.C. (Gastric cancer of the proper muscle layer) does not surpass the proper muscle layer and offers a five years life expectance of near 60% after adequate surgical treatment, with peculiar features in radiology, endoscopy and evolutivity. We report a case of PM G.C., "depressed" and "protruded". The proper muscle layer was invaded by the depressed lesion". Both lesions were continguous.

  7. Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

    SciTech Connect

    Huang, Chiao-Ti Li, Jiun-Yun; Chou, Kevin S.; Sturm, James C.

    2014-06-16

    We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.

  8. Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

    NASA Astrophysics Data System (ADS)

    Huang, Chiao-Ti; Li, Jiun-Yun; Chou, Kevin S.; Sturm, James C.

    2014-06-01

    We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.

  9. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect

    Lu, Cimang Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  10. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  11. Data requirements for intermediate energy nuclear applications

    SciTech Connect

    Pearlstein, S.

    1990-01-01

    Several applications that include spallation neutron sources, space radiation effects, biomedical isotope production, accelerator shielding and radiation therapy make use of intermediate energy nuclear data extending to several GeV. The overlapping data needs of these applications are discussed in terms of what projectiles, targets and reactions are of interest. Included is a discussion of what is generally known about these data and what is needed to facilitate their use in intermediate energy applications. 40 refs., 2 figs., 2 tabs.

  12. Centrality and pseudorapidity dependence of charged hadron production at intermediate p{sub t} in Au+Au collisions at {radical}s{sub NN} = 130 GeV

    SciTech Connect

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kunz, C.L.; Kutuev, R.Kh.; Kuznetsov, A.A.; Lamont, M.A.C.; et al.

    2004-04-15

    We present STAR measurements of charged hadron production as a function of centrality in Au + Au collisions at {radical}s{sub NN} = 130 GeV. The measurements cover a phase space region of 0.2 < p{sub T} < 6.0 GeV/c in transverse momentum and 11 < {eta} < 1 in pseudorapidity. Inclusive transverse momentum distributions of charged hadrons in the pseudorapidity region 0.5 < |{eta}| < 1 are reported and compared to our previously published results for |{eta}| < 0.5. No significant difference is seen for inclusive p{sub T} distributions of charged hadrons in these two pseudorapidity bins. We measured dN/d{eta} distributions and truncated mean p{sub T} in a region of p{sub T} > P{sub T}{sup cut}, and studied the results in the framework of participant and binary scaling. No clear evidence is observed for participant scaling of charged hadron yield in the measured pT region. The relative importance of hard scattering process is investigated through binary scaling fraction of particle production.

  13. Centrality and pseudorapidity dependence of charged hadron production at intermediate p{sub T} in Au+Au collisions at {radical}s{sub NN} = 130 GeV

    SciTech Connect

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kunz, C.L.; Kutuev, R.Kh.; Kuznetsov, A.A.; Lamont, M.A.C.; et al.

    2004-04-15

    We present STAR measurements of charged hadron production as a function of centrality in Au + Au collisions at {radical}s{sub NN} = 130 GeV. The measurements cover a phase space region of 0.2 < p{sub T} < 6.0 GeV/c in transverse momentum and -1 < {eta} < 1 in pseudorapidity. Inclusive transverse momentum distributions of charged hadrons in the pseudorapidity region 0.5 < |{eta}| < 1 are reported and compared to our previously published results for |{eta}| < 0.5. No significant difference is seen for inclusive p{sub T} distributions of charged hadrons in these two pseudorapidity bins. We measured dN/d{eta} distributions and truncated mean p{sub T} in a region of p{sub T} > p{sub T}{sup cut}, and studied the results in the framework of participant and binary scaling. No clear evidence is observed for participant scaling of charged hadron yield in the measured p{sub T} region. The relative importance of hard scattering process is investigated through binary scaling fraction of particle production.

  14. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell.

    PubMed

    Li, Senlin; Bi, Jingfeng; Li, Mingyang; Yang, Meijia; Song, Minghui; Liu, Guanzhou; Xiong, Weiping; Li, Yang; Fang, Yanyan; Chen, Changqing; Lin, Guijiang; Chen, Wenjun; Wu, Chaoyu; Wang, Duxiang

    2015-01-01

    The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley-Read-Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.

  15. Ge well detector calibration by means of a trial and error procedure using the dead layers as a unique parameter in a Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Courtine, Fabien; Pilleyre, Thierry; Sanzelle, Serge; Miallier, Didier

    2008-11-01

    The project aimed at modelling an HPGe well detector in view to predict its photon-counting efficiency by means of the Monte Carlo simulation code GEANT4. Although a qualitative and quantitative description of the crystal and housing was available, uncertainties were associated to parameters controlling the detector response. This induced poor agreement between the efficiency calculated on the basis of nominal data and the actual efficiency experimentally measured with a 137Cs point source. It was then decided to improve the model, by parameterization of a trial and error method. The distribution of the dead layers was adopted as a unique parameter, in order to explore the possibilities and pertinence of this parameter. In the course of the work, it appeared necessary to introduce the possibility that the thickness of the dead layers was not uniform for a given surface. At the end of the process, the results allowed to conclude that the approach was able to give a model adapted to practical application with a satisfactory precision in the calculated efficiency. The pattern of the "dead layers" that was obtained is characterized by a variable thickness which seems to be physically relevant. It implicitly and partly accounts for effects that are not originated from actual dead layers, such as incomplete charge collection. But, such effects, which are uneasily accounted for, can, in a first approximation, be represented by "dead layers"; this is an advantage of the parameterization that was adopted.

  16. Intermediate-Scale Experimental and Numerical Study of Multiphase CO2 Attenuation in Layered Shallow Aquifers During Leakage from Geologic Sequestration Site

    NASA Astrophysics Data System (ADS)

    Plampin, M. R.; Pawar, R.; Porter, M. L.; Illangasekare, T. H.

    2015-12-01

    In order to effectively predict and mitigate the potential risks from leakage of stored CO2, we must first understand the physicochemical processes that CO2 undergoes during migration through shallow aquifers, including dissolved phase advection and dispersion as well as gas phase exsolution, multiphase flow, and dissolution. Since field sites are inherently large-scale, heterogeneous, 3-D systems, large-scale experimental data is important to validate numerical models and to make confident predictions regarding CO2 migration. A large, highly instrumented, two-dimensional tank was built and packed with porous media to represent a portion of a layered shallow aquifer. Flow of water across the tank was established by applying a small difference in head between the two ends. A separate stream of water was then saturated with dissolved CO2 and injected into the bottom of the tank near the upstream end. Various saturation sensors measured the spatiotemporal pattern of gas phase evolution in the tank, while an external sensor and an Ion Chromatograph were used to monitor the dissolved CO2 concentrations at various locations in the system. The top of the tank was baffled into four sealed compartments, each of which was connected to a gas flow meter to monitor the spatiotemporal pattern of gas phase CO2 release to the atmosphere. Numerical simulations were also performed to better understand the fundamental physics that drove the observed CO2 evolution processes, and to help validate a widely used code using the experimental data. The simulations were performed with the Finite Element Heat and Mass Transfer (FEHM) software that was developed at Los Alamos National Laboratory. The model domain, porous media properties, and initial conditions were set up to match those of the experiment, and the boundary conditions were adjusted to investigate the mass transfer between the dissolved and gaseous phases of CO2 that developed within the system. Results from both the experiments

  17. Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates

    NASA Astrophysics Data System (ADS)

    Olajos, J.; Vogl, P.; Wegscheider, W.; Abstreiter, G.

    1991-11-01

    Short-period α-Sn/Ge strained-layer superlattices have been prepared on [001] Ge substrates by low-temperature molecular-beam epitaxy. We have achieved almost-defect-free and thermally stable single-crystalline structures. Photocurrent measurements in a series of Sn1Gem (m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in good agreement with band-structure calculations. A direct fundamental energy gap is predicted for a slightly increased lateral lattice constant in α-Sn/Ge superlattices.

  18. Heterogeneous integration of SiGe/Ge and III-V for Si photonics

    NASA Astrophysics Data System (ADS)

    Takenaka, Mitsuru; Kim, Younghyun; Han, Jaehoon; Kang, Jian; Ikku, Yuki; Cheng, Yongpeng; Park, Jinkwon; Takagi, Shinichi

    2016-05-01

    The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

  19. High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

    2005-01-01

    III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/Ge

  20. Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations

    NASA Astrophysics Data System (ADS)

    Singh, Janpreet; Singh, Gurinder; Kaura, Aman; Tripathi, S. K.

    2016-06-01

    A computational study on stable hexagonal phase of undoped, and Sn- and Pb-doped Ge2Sb2Te5 (GST) phase change materials has been carried out. The electronic structure, lattice dynamics and thermoelectric properties of doped GST have been extensively investigated using ab initio methods with virtual crystal approximation. The hexagonal symmetry of the GST is maintained with the addition of Sn and Pb dopants. The lattice parameters and atomic volume of the Sn-doped GST structure is larger than that of the undoped GST. Electronic band structure calculations show that there is an increase in band gap with the increase in the concentration of Sn (≤4.4 at.%). However, with the addition of a very small amount of Pb, there is a continuous decrease in lattice parameters and band gap values. The calculated energy band structure is then used in combination with the Boltzmann transport equation to calculate the thermoelectric parameters of GST and Sn- and Pb-doped materials. Seebeck coefficient ( S), electronic thermal conductivity ( κ e) and the thermoelectric figure-of-merit ( ZT) have been calculated with the help of BoltzTraP code. It was found that the thermoelectric properties of GST are enhanced with the addition of Sn.

  1. Reduction of critical current density for out-of-plane mode oscillation in a mag-flip spin torque oscillator using highly spin-polarized Co2Fe(Ga0.5Ge0.5) spin injection layer

    NASA Astrophysics Data System (ADS)

    Bosu, S.; Sepehri-Amin, H.; Sakuraba, Y.; Hayashi, M.; Abert, C.; Suess, D.; Schrefl, T.; Hono, K.

    2016-02-01

    We study spin torque oscillators comprised of a perpendicular spin injection layer (SIL) and a planar field generating layer to reveal the influence of the spin polarization of SIL material on the critical current density, JC, to induce microwave oscillation. Two systems with different SIL are compared: one with a highly spin-polarized Heusler alloy, Co2Fe(Ga0.5Ge0.5) (CFGG), and the other a prototypical Fe2Co alloy. Cross sectional scanning transmission electron microscopy observations show the B2-ordered structure in a 3-nm-thick CFGG SIL, a prerequisite for obtaining half-metallic transport properties. Current induced microwave oscillations are found at frequencies of ˜15 GHz for both systems. However, the current needed to cause the oscillations is ˜50% smaller for films with the CFGG SIL compared to those of the Fe2Co SIL. These results are in accordance with micromagnetic simulations that include spin accumulation at the SIL.

  2. Fabrication of strained Ge film using a thin SiGe virtual substrate

    NASA Astrophysics Data System (ADS)

    Lei, Guo; Shuo, Zhao; Jing, Wang; Zhihong, Liu; Jun, Xu

    2009-09-01

    This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemical vapor deposition (UHVCVD) to grow a thin compressively strained Ge film. As the first step, low temperature RPCVD was used to grow a fully relaxed SiGe virtual substrate layer at 500 °C with a thickness of 135 nm, surface roughness of 0.3 nm, and Ge content of 77%. Then, low temperature UHVCVD was used to grow a high quality strained pure Ge film on the SiGe virtual substrate at 300 °C with a thickness of 9 nm, surface roughness of 0.4 nm, and threading dislocation density of ~ 105 cm-2. Finally, a very thin strained Si layer of 1.5-2 nm thickness was grown on the Ge layer at 550 °C for the purpose of passivation and protection. The whole epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films.

  3. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

    NASA Astrophysics Data System (ADS)

    Wirths, S.; Tiedemann, A. T.; Ikonic, Z.; Harrison, P.; Holländer, B.; Stoica, T.; Mussler, G.; Myronov, M.; Hartmann, J. M.; Grützmacher, D.; Buca, D.; Mantl, S.

    2013-05-01

    In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge1-xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.

  4. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  5. GeSn pin diodes: from pure Ge to direct-gap materials

    NASA Astrophysics Data System (ADS)

    Gallagher, James; Senaratne, Charutha; Xu, Chi; Aoki, Toshihiro; Kouvetakis, John; Menendez, Jose

    2015-03-01

    Complete n - i - p Ge1-ySny diode structures (y =0-0.09) were fabricated on Si substrates with Sn concentrations covering the entire range between pure Ge and direct-gap materials. The structures typically consist of a thick (>1 μm) n + + Ge buffer layer grown by Gas Source Molecular Epitaxy using Ge4H10 and either P(SiH3)3 or P(GeH3)3 , followed by a GeSn intrinsic layer (~ 500 nm), grown by Chemical Vapor Deposition (CVD) using Ge3H8 and SnD4, and a GeSn p-type top layer (~ 200 nm) grown by CVD using Ge3H8,SnD4andB2H6. Temperature-dependence of the I - V characteristics of these diodes as well as the forward-bias dependence of their electroluminescence (EL) signal were investigated, making it possible for the first time to extract the compositional dependence of parameters such as band gaps, activation energies, and dark currents. The EL spectra are dominated by direct-gap emission, which shifts from 1590 nm to 2300 nm, in agreement with photoluminescence results. DOD AFOSR FA9550-12-1-0208 and DOD AFOSR FA9550-13-1-0022.

  6. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    PubMed Central

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  7. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-05-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  8. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

    PubMed

    Bouška, M; Pechev, S; Simon, Q; Boidin, R; Nazabal, V; Gutwirth, J; Baudet, E; Němec, P

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  9. New approach to the growth of low dislocation relaxed SiGe material

    NASA Astrophysics Data System (ADS)

    Powell, A. R.; Iyer, S. S.; LeGoues, F. K.

    1994-04-01

    In this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an ultrathin silicon on insulator (SOI) substrate with a superficial silicon thickness less than the SiGe layer thickness. Initially, the thin Si layer is put under tension due to an equalization of the strain between the Si and SiGe layers. Thereafter, the strain created in the thin Si layer relaxes by plastic deformation. Since the dislocations are formed and glide in the thin Si layer, no threading dislocation is ever introduced in to the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis. We thus have a method for producing very low dislocation, relaxes SiGe films with the additional benefit of an SOI substrate.

  10. Crystal orientation dependence of current-perpendicular-to-plane giant magnetoresistance of pseudo spin-valves with epitaxial Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) Heusler alloy layers

    SciTech Connect

    Chen, Jiamin; Hono, K.; Li, Songtian; Furubayashi, T. Takahashi, Y. K.

    2014-06-21

    The magnetoresistive (MR) properties of Co{sub 2}Fe(Ge{sub 0.5}Ga{sub 0.5}) (CFGG) Heusler alloy-based current-perpendicular-to-plane giant magnetoresistance pseudo-spin-valves (PSVs) are investigated. The PSV films are epitaxially grown on a sapphire (112{sup ¯}0) substrate with an Ag or Cu spacer layer, and their magnetoresistive properties are compared with those of PSV grown on MgO(001) substrates. For substrates with an Ag spacer, the PSV with the (001)[110]{sub CFGG}//(001)[010]{sub Ag} interface grown on MgO(001) exhibits a higher MR output compared with the (110)[001]{sub CFGG}//(111)[11{sup ¯}0]{sub Ag} interface grown on sapphire (112{sup ¯}0). In contrast, a higher MR output is obtained using a Cu spacer with the (110)[001]{sub CFGG}//(111)[11{sup ¯}0]{sub Cu} interface. These results demonstrate that the MR outputs depend upon the crystal orientation at the interface, and that interfaces with a small misfit tend to exhibit a larger MR output. This indicates the influence of crystal orientation as well as lattice mismatch upon the interfacial spin scattering asymmetry.

  11. Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits.

    PubMed

    Kang, Jian; Takenaka, Mitsuru; Takagi, Shinichi

    2016-05-30

    We present Ge rib waveguide devices fabricated on a Ge-on-insulator (GeOI) wafer as a proof-of-concept Ge mid-infrared photonics platform. Numerical analysis revealed that the driving current for a given optical attenuation in a carrier-injection Ge waveguide device at a 1.95 μm wavelength can be approximately five times smaller than that in a Si device, enabling in-line carrier-injection Ge optical modulators based on free-carrier absorption. We prepared a GeOI wafer with a 2-μm-thick buried oxide layer (BOX) by wafer bonding. By using the GeOI wafer, we fabricated Ge rib waveguides. The Ge rib waveguides were transparent to 2 μm wavelengths and the propagation loss was found to be 1.4 dB/mm, which may have been caused by sidewall scattering. We achieved a negligible bend loss in the Ge rib waveguide, even with a 5 μm bend radius, owing to the strong optical confinement in the GeOI structure. We also formed a lateral p-i-n junction along the Ge rib waveguide to explore the capability of absorption modulation by carrier injection. By injecting current through the lateral p-i-n junction, we achieved optical intensity modulation in the 2 μm band based on the free-carrier absorption in Ge.

  12. Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

    NASA Astrophysics Data System (ADS)

    D'Costa, Vijay Richard; Wang, Lanxiang; Wang, Wei; Lim, Sin Leng; Chan, Taw Kuei; Chua, Lye Hing; Henry, Todd; Zou, Wei; Hatem, Christopher; Osipowicz, Thomas; Tok, Eng Soon; Yeo, Yee-Chia

    2014-09-01

    We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transport properties similar to those of heated Ge implants. The far-infrared dielectric function of as-implanted Ge and GeSn shows the typical free carrier response which can be described by a single Drude oscillator. Bulk Ge-like critical points E1, E1 + Δ1, E0', and E2 are observed in the visible-UV dielectric function of heated Ge and GeSn indicating single crystalline quality of the as-implanted layers. Although the implantation at 400 °C recovers crystallinity in both Ge and GeSn, an annealing step is necessary to enhance the carrier activation.

  13. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

    NASA Astrophysics Data System (ADS)

    Wirths, S.; Troitsch, R.; Mussler, G.; Hartmann, J.-M.; Zaumseil, P.; Schroeder, T.; Mantl, S.; Buca, D.

    2015-05-01

    The formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap group IV semiconductors. (Si)GeSn layers were pseudomorphically grown on Ge buffered Si(001) by reduced pressure chemical vapor deposition. Ni, i.e. the metal of choice for source/drain metallization in Si nanoelectronics, is employed for the stano-(silicon)-germanidation of highly strained (Si)GeSn alloys. We show that NiGeSn on GeSn layers change phase from well-oriented Ni5(GeSn)3 to poly-crystalline Ni1(GeSn)1 at very low annealing temperatures. A large range of GeSn compositions with Sn concentrations up to 12 at.%, and SiGeSn ternaries with large Si and Sn compositions from 18%/3% to 4%/11% are investigated. In addition, the sheet resistance, of importance for electronic or optoelectronic device contacts, is quantified. The incorporation of Si extends the thermal stability of the resulting low resistive quaternary phase compared to their NiGeSn counterparts.

  14. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  15. Ferroelectric switching in epitaxial GeTe films

    SciTech Connect

    Kolobov, A. V. Fons, P.; Tominaga, J.; Kim, D. J.; Gruverman, A.; Giussani, A.; Calarco, R.

    2014-06-01

    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

  16. (Si)GeSn nanostructures for light emitters

    NASA Astrophysics Data System (ADS)

    Rainko, D.; Stange, D.; von den Driesch, N.; Schulte-Braucks, C.; Mussler, G.; Ikonic, Z.; Hartmann, J. M.; Luysberg, M.; Mantl, S.; Grützmacher, D.; Buca, D.

    2016-05-01

    Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group IV photonic devices. The major goal here is the realization of fully integrated group IV room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si)Ge(Sn) heterostructures, ranging from GeSn/Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices.

  17. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    NASA Astrophysics Data System (ADS)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  18. Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer

    NASA Astrophysics Data System (ADS)

    Suzuki, Akihiro; Nakatsuka, Osamu; Shibayama, Shigehisa; Sakashita, Mitsuo; Takeuchi, Wakana; Kurosawa, Masashi; Zaima, Shigeaki

    2015-11-01

    We investigated the impact of introducing an ultra-high Sn content Ge1-xSnx interlayer on the electrical properties at the metal/Ge interface. We achieved epitaxial growth of a Ge1-xSnx thin layer with an ultra-high substitutional Sn content of up to 46% on a Ge(001) substrate by considering the misfit strain between Ge1-xSnx and Ge. From the current-voltage characteristics of Al/Ge1-xSnx/n-Ge Schottky diodes, we found an increase in the forward current density of the thermionic emission current with increasing Sn content in the Ge1-xSnx interlayer. The Schottky barrier height estimated in Al/Ge1-xSnx/n-Ge diodes decreases to 0.49 eV with an increase in the Sn content up to 46% of the Ge1-xSnx interlayer. The reduction of the barrier height may be due to the shift of the Fermi level pinning position at the metal/Ge interface with a Ge1-xSnx interlayer whose valence band edge is higher than that of Ge. This result enables the effective reduction of the contact resistivity by introducing a group-IV semiconductor alloy interlayer of Ge1-xSnx into the metal/n-Ge interface.

  19. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  20. Low resistance Cu3Ge compounds formation by the low temperature treatment of Cu/Ge system in atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Kazimirov, A. I.; Erofeev, E. V.; Fedin, I. V.; Kagadei, V. A.; Yurjev, Y. N.

    2016-06-01

    The research deals with the regularities for Cu3Ge compound formation under the low temperature treatment of a double-layer Cu/Ge system deposited on i-GaAs substrate in atomic hydrogen flow. The treatment of a Cu/Ge/i-GaAs system with layer thicknesses, respectively, of 122 and 78 nm, in atomic hydrogen with a flow rate of 1015 at.cm-2s-1 for a duration of 2.5-10 min at room temperature, leads to an interdiffusion of Cu and Ge and formation of a polycrystalline film containing stoichiometric phase Cu3Ge. The film consists of vertically oriented grains of dimensions 100-150 nm and has a minimum specific resistance of 4.5 μΩ cm. Variation in the treatment duration of Cu/Ge/i-GaAs samples in atomic hydrogen affects Cu and Ge distribution profiles, the phase composition of films formed, and the specific resistance of the latter. As observed, Cu3Ge compound synthesis at room temperature demonstrates the stimulative effects characteristic of atomic hydrogen treatment for both Cu and Ge diffusion and for the chemical reaction of Cu3Ge compound generation. Activation of these processes can be conditioned by the energy released during recombination of hydrogen atoms adsorbed on the surface of a Cu/Ge/i-GaAs sample.

  1. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu.; Mironov, O. A.; Kummer, M.; Kaenel, H. von

    2009-11-01

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  2. Self-diffusion in compressively strained Ge

    SciTech Connect

    Kawamura, Yoko; Uematsu, Masashi; Itoh, Kohei M.; Hoshi, Yusuke; Sawano, Kentarou; Shiraki, Yasuhiro; Myronov, Maksym; Haller, Eugene E.

    2011-08-01

    Under a compressive biaxial strain of {approx} 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al.[Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65{+-}0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.

  3. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  4. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect

    Grzela, T. Schubert, M. A.; Koczorowski, W.; Capellini, G.; Czajka, R.; Radny, M. W.; Curson, N.; Schofield, S. R.; Schroeder, T.

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  5. Semiphenomenological method of analysis for intermediate-energy alpha-nucleus elastic scattering data

    SciTech Connect

    Ahmad, I.; Alvi, M.A.

    1983-12-01

    We propose a semiphenomenological method of analysis for intermediate energy ..cap alpha..-nucleus elastic scattering experiments and demonstrate its usefulness by analyzing available elastic ..cap alpha..-nucleus scattering data at 1.37 GeV.

  6. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    NASA Astrophysics Data System (ADS)

    Toko, K.; Oya, N.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2015-02-01

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  7. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    SciTech Connect

    Toko, K. Oya, N.; Suemasu, T.; Saitoh, N.; Yoshizawa, N.

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  8. High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Sun, Bing; Chang, Hu-Dong; Lu, Li; Liu, Hong-Gang; Wu, De-Xin

    2012-03-01

    Heterogeneous integration of crystalline Ge layers on cleaned and H-terminated Si(111) substrates are demonstrated by employing a combination of e-beam evaporation and solid phase epitaxy techniques. High-quality single crystalline Ge(111) layers on Si(111) substrates with a smooth Ge surface and an abrupt interface between Ge and Si are obtained. An XRD rocking curve scan of the Ge(111) diffraction peak shows a FWHM of only 260 arcsec for a 50-nm-thick Ge layer annealed at 600°C with a ramp-up rate of 20°C/s and a holding time of 1 min. The AFM images exhibit that the rms surface roughness of all the crystalline Ge layers are less than 2.1 nm.

  9. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

    NASA Astrophysics Data System (ADS)

    Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M.

    2016-09-01

    It is shown that compressively strained Ge1‑xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1‑xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn < 15%) and is less important for QWs with larger Sn concentration (Sn > 15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region.

  10. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

    PubMed Central

    Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M.

    2016-01-01

    It is shown that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1−xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn < 15%) and is less important for QWs with larger Sn concentration (Sn > 15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region. PMID:27686056

  11. [Intermediate phenotype of schizophrenia].

    PubMed

    Hashimoto, Ryota

    2013-04-01

    Genes are major contributors to schizophrenia. The intermediate phenotype concept represents a strategy for identifying risk genes for schizophrenia and for characterizing the neural systems affected by risk gene variants to elucidate quantitative, mechanistic aspects of brain function implicated in schizophrenia. Intermediate phenotypes are defined by being heritable, being able to measure quantitatively; being related to the disorder and its symptoms in the general population; being stable over time; showing increased expression in unaffected relatives of probands; and cosegregation with the disorder in families. Intermediate phenotypes in schizophrenia are neurocognition, neuroimaging, neurophysiology, etc. In this review, we present concept, recent work, and future perspective of intermediate phenotype.

  12. Reactive dc magnetron sputtering of (GeO{sub x}-SiO{sub 2}) superlattices for Ge nanocrystal formation

    SciTech Connect

    Zschintzsch, M.; Jeutter, N. M.; Borany, J. von; Krause, M.; Muecklich, A.

    2010-02-15

    The motivation of this work is the tailored growth of Ge nanocrystals for photovoltaic applications. The use of superlattices provides a reliable method to control the Ge nanocrystal size after phase separation. In this paper, we report on the deposition of (GeO{sub x}-SiO{sub 2}) superlattices via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation during subsequent annealing. Attention is directed mainly to define proper deposition conditions for tuning the GeO{sub x} composition between elemental Ge (x=0) and GeO{sub 2} (x=2) by the variation in the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows sequential GeO{sub x}-SiO{sub 2} deposition without changing the oxygen partial pressure during deposition. The phase separation and Ge nanocrystal formation after subsequent annealing were investigated with in situ x-ray scattering, Raman spectroscopy, and electron microscopy. By these methods the existence of 2-5 nm Ge nanocrystals at annealing temperatures of 600-750 deg. C has been confirmed which is within the superlattice stability range. The technique used allows the fabrication of superlattice stacks with very smooth interfaces (roughness<1 nm); thus the Ge nanocrystal layers could be separated by very thin SiO{sub 2} films (d<3 nm) which offers interesting possibilities for charge transport via direct tunneling.

  13. Ge-on-Si photodiode with black silicon boosted responsivity

    NASA Astrophysics Data System (ADS)

    Steglich, M.; Oehme, M.; Käsebier, T.; Zilk, M.; Kostecki, K.; Kley, E.-B.; Schulze, J.; Tünnermann, A.

    2015-08-01

    Normal-incidence Ge-on-Si photodiodes with 300 nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34 A/W at 1550 nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.

  14. TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs

    NASA Astrophysics Data System (ADS)

    Bera, M. K.; Mahata, C.; Chakraborty, A. K.; Nandi, S. K.; Tiwari, Jitendra N.; Hung, Jui-Yi; Maiti, C. K.

    2007-12-01

    In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. Titanium tetrakis iso- propoxide (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO2 films on p-Ge (1 0 0) at low temperature (<200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of ~65 Pa. The presence of an ultra-thin lossy GeO2 interfacial layer between the deposited high-k film and the substrate, results in frequency-dependent capacitance-voltage (C-V) characteristics in strong accumulation and a high interface state density (~1013 cm-2 eV-1). To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, thus forming TiO2/GeOxNy/Ge stacked-gate structure with improved interface/electrical properties. Different N sources, such as NO, NH3 and NO/NH3, have been used for nitrogen engineering. XPS and Raman spectroscopy analyses have been used for surface morphological study. Electrical properties, such as gate leakage current density, interface state density, charge trapping, flatband voltage shift, etc, have been studied in detail for TiO2/GeOxNy/Ge MIS capacitors using the current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and stress (both constant voltage and current) measurements. Although a significant improvement in electrical characteristics has been observed after nitridation in general, the formation of the interfacial GeOxNy layer, obtained from NO-plasma nitridation, is found to provide the maximum improvement among all the nitridation techniques used in this study. It is shown that the insertion of an ultra-thin oxynitride (GeOxNy) interfacial layer is advantageous for producing gate-quality TiO2 high-k dielectric stacks on Ge substrates.

  15. Tensile strained GeSn on Si by solid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lieten, R. R.; Seo, J. W.; Decoster, S.; Vantomme, A.; Peters, S.; Bustillo, K. C.; Haller, E. E.; Menghini, M.; Locquet, J.-P.

    2013-02-01

    We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single crystalline GeSn by solid phase epitaxy. Excellent structural quality is demonstrated for layers with up to 6.1% of Sn. The GeSn layers show tensile strain (up to +0.34%), which lowers the difference between direct and indirect band transition and makes this method promising for obtaining direct band gap group IV layers. GeSn with 4.5% Sn shows increased optical absorption compared to Ge and an optical band gap of 0.52 eV.

  16. Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

    NASA Astrophysics Data System (ADS)

    Minami, Kaichiro; Moriya, Atsushi; Yuasa, Kazuhiro; Maeda, Kiyohiko; Yamada, Masayuki; Kunii, Yasuo; Niwano, Michio; Murota, Junichi

    2015-08-01

    Introduction of Ge into ULSIs has become increasingly attractive because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in cleanroom air, the control of formation and reduction of the Ge oxide is requested for the introduction of Ge layers into Si process. Here, the reactions between gas phase Ge oxide and Si substrate and between the Ge oxide on Ge epitaxial layer and SiH4 are investigated. The native-oxidized Ge amount is obtained by calculating from chemically shifted peak intensity of Ge 3d measured by X-ray photoelectron spectroscopy. By the adsorption of the Ge oxide on Si(1 0 0) surface, pure Ge and Si oxide are formed on the Si surface even at 350 °C and the formed Ge amount tends to correspond to the oxidized Si amount, independently of the heat-treatment environment of H2 and Ar under the condition that Si oxide is not reduced by H2. By SiH4 treatment, the amount of the oxidized Ge on the Ge layer decreases drastically even at 350 °C and Si oxide is formed on the Ge layer. From these results, it is suggested that the Ge oxide is reduced even at 350 °C by Si or SiH4, and the Si oxide and the pure Ge are formed.

  17. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dubinov, A. A. Drozdov, M. N.; Zvonkov, B. N.; Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N.; Werner, P.

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  18. Growth of Si{sub 1{minus}x}Ge{sub x}(011) on Si(011)16{times}2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

    SciTech Connect

    Taylor, N.; Kim, H.; Spila, T.; Eades, J.A.; Glass, G.; Desjardins, P.; Greene, J.E.

    1999-01-01

    Single crystal Si{sub 1{minus}x}Ge{sub x}(011) layers with x{le}0.35 have been grown on double-domain Si(011){open_quotes}16{times}2{close_quotes} surfaces from Si{sub 2}H{sub 6}/Ge{sub 2}H{sub 6} mixtures at temperatures T{sub s}=400{endash}950{degree}C. D{sub 2} temperature programmed desorption was used to show that the structure of the Si(011){open_quotes}16{times}2{close_quotes} surface unit cell, more correctly written as [{sub 2}{sup 17}{sub 2}{sup 1}] since the unit cell vectors are nonorthogonal, is composed of 16 adatoms and eight {pi}-bonded dimers with a dangling bond density half that of the 1{times}1 surface. Si{sub 1{minus}x}Ge{sub x}(011) overlayers are {open_quotes}16{times}2{close_quotes} when x{lt}x{sub c}(T{sub s}) and {open_quotes}2{times}8{close_quotes} with x{gt}x{sub c}(T{sub s}). The value of x{sub c} decreases from {approx_equal} 0.10 at T{sub s}=475{degree}C to 0.08 at 550{degree}C to 0.06 at 650{degree}C. Both the {open_quotes}2{times}8{close_quotes} and {open_quotes}16{times}2{close_quotes} Si{sub 1{minus}x}Ge{sub x}(011) surface reconstructions gradually and reversibly transform to 1{times}1 at T{sub s} between 650 and 725{degree}C. Film growth kinetics exhibit three distinct regimes. At low temperatures (T{sub s}{approx_lt}500{degree}C), the film deposition rate R{sub SiGe} decreases exponentially with 1/T{sub s} in a surface-reaction-limited growth mode for which the rate-limiting step is hydrogen desorption from Si and Ge monohydride phases. R{sub SiGe} becomes essentially constant with T{sub s} in the intermediate impingement-flux-limited range, T{sub s}=500{endash}650{degree}C. At T{sub s}{gt}650{degree}C, R{sub SiGe} increases again with T{sub s} due initially (T{sub s}{approx_equal}650{endash}725{degree}C) to an increase in the steady-state dangling bond coverage as the surface reconstruction gradually transforms to 1{times}1. The continued increase in R{sub SiGe} at even higher T{sub s} is associated with strain

  19. Kesterite Cu2Zn(Sn,Ge)(S,Se)4 thin film with controlled Ge-doping for photovoltaic application.

    PubMed

    Zhao, Wangen; Pan, Daocheng; Liu, Shengzhong Frank

    2016-05-21

    Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm(2) without an anti-reflection layer. PMID:27121893

  20. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect

    Gatti, E. Pezzoli, F.; Grilli, E.; Isa, F.; Chrastina, D.; Isella, G.; Müller Gubler, E.

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3 μm thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3 × 10{sup 7 }cm{sup −2} and an interdiffusion layer at the well/barrier interface of 2.1 nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  1. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    SciTech Connect

    Yurasov, D. V. Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V.; Spirin, K. E.

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  2. Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

    NASA Astrophysics Data System (ADS)

    Shaleev, M. V.; Novikov, A. V.; Yurasov, D. V.; Hartmann, J. M.; Kuznetsov, O. A.; Lobanov, D. N.; Krasilnik, Z. F.

    2012-10-01

    The specifics of the two-to-three dimensional growth mode transition of pure Ge on SiGe/Si(001) strain-relaxed buffers (SRBs) were investigated. It was shown that the critical thickness for elastic relaxation is influenced not only by the lattice mismatch between the substrate and the film but also by Ge segregation and surface roughness dependent on parameters of strained layers. Critical thickness was found to be smaller for Ge grown on SiGe strain-relaxed buffers than on pure Si(001) substrates, in spite of the lesser lattice mismatch. Insertion of thin tensile-strained Si layers between Ge and SiGe strain-relaxed buffers increased the critical thickness.

  3. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

    PubMed

    Paskiewicz, Deborah M; Tanto, Boy; Savage, Donald E; Lagally, Max G

    2011-07-26

    Many important materials cannot be grown as single crystals in bulk form because strain destroys long-range crystallinity. Among them, alloys of group IV semiconductors, specifically SiGe alloys, have significant technological value. Using nanomembrane strain engineering methods, we demonstrate the fabrication of fully elastically relaxed Si(1-x)Ge(x) nanomembranes (NMs) for use as growth substrates for new materials. To do so, we grow defect-free, uniformly and elastically strained SiGe layers on Si substrates and release the SiGe layers to allow them to relax this strain completely as free-standing NMs. These SiGe NMs are transferred to new hosts and bonded there. We confirm the high structural quality of these new materials and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained-Si layers and thick, lattice-matched SiGe alloy layers on them.

  4. Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge{sub 0.99}C{sub 0.01}/Ge(001)

    SciTech Connect

    D'Arcy-Gall, J.; Gall, D.; Desjardins, P.; Petrov, I.; Greene, J. E.

    2000-10-15

    We show that fast sputtered particles in the sputter-deposition process, largely ignored in previous studies, can play a major role in determining defect densities in as-deposited layers. Epitaxial Ge{sub 1-y}C{sub y}/Ge(001), in which there is a direct correlation between C lattice configurations and the local concentration of Ge self-interstitials, is used as a model materials system. We show that increasing the fraction of fast Ge neutrals in the high-energy tail of the ejected particle distribution increases the concentration of Ge--C split interstitials and thus the film compressive strain. The Ge--C split interstitials form as a result of trapping, by incorporated substitutional C atoms, of Ge self-interstitials produced by incident hyperthermal Ge atoms. Experimental results are supported by Monte Carlo simulations and ab initio calculations.

  5. Arsenic-terminated Ge(111): An ideal 1 x 1 surface

    SciTech Connect

    Bringans, R.D.; Uhrberg, R.I.G.; Bachrach, R.Z.; Northrup, J.E.

    1985-07-29

    Arsenic interaction with the Ge(111) surface results in the replacement of the outer Ge layer with an As layer. This system has a 1 x 1 symmetry and the calculated positions of the As atoms are very close to the positions expected from bulk bond lengths. Ge(111):As is thus a model ideal surface and a comparison is made of an experimental and a theoretical determination of its fully occupied surface band.

  6. Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (<200 °C) without post annealing

    NASA Astrophysics Data System (ADS)

    Sugiyama, Takatoshi; Mishiba, Naoya; Kamiko, Masao; Kyuno, Kentaro

    2016-09-01

    Crystalline Ge thin films with (111) orientation are obtained by co-depositing Au and Ge on a substrate heated to ∼170 °C, with Au segregating at the film surface, which is desirable for selective etching. Although in the conventional metal-induced crystallization method using Au as a catalyst, a bilayer of Au and amorphous Ge layers have to be annealed for Ge to crystallize, the film in this study is already crystalline in the as-deposited state. The effective crystallization process implies the existence of a supercooled liquid alloy layer at the growth front.

  7. Defects in Ge+-preamorphized silicon

    NASA Astrophysics Data System (ADS)

    Chen, Peng-Shiu; Hsieh, T. E.; Hwang, Yih-Chyang; Chu, Chih-Hsun

    1999-11-01

    This work studied the morphology and annealing behaviors of extended defects in Si subjected to various Ge+ preamorphization and BF2+ implantation conditions. The extended defects formed were near the specimen surface when Ge+ implantation energy and dose amount were low. During subsequent annealing, the end-of-range (EOR) loops were enlarged and then moved out of the specimen. High energy/low dose Ge+ implantation generated a damaged layer which initially transformed into a wide zone containing dislocation loops and rodlike defects in the annealed specimen. As the annealing proceeded, the width of defective zone gradually shrunk so that most of the extended defects could be annihilated by defect rejection/recombination process. In addition to the category II defects found in previous investigations, hairpin dislocations emerged in high energy/high dose Ge+-implanted specimens. In this specimen, rodlike defects and hairpin dislocations could be removed by annealing, while the EOR loops became relatively inert so that their removal would require high temperatures and/or long annealing times. Microwave plasma surface treatment was also carried out to form a nitride layer on specimen surface. Experimental results indicate that in addition to effectively reducing the size of EOR loops, surface nitridation might serve as a vacancy source injecting vacancies into Si to annihilate the interstitials bounded by dislocation loops. Reduction in the defect size was pronounced when bias voltage was added to the plasma process. However, radiation damage might occur with too high of a bias voltage.

  8. Strain measurements of Ge epilayers on Si by Spectroscopic Ellipsometry

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Fernando, N.; Medina, A. A.; Nelson, C. M.; Zollner, S.; Xu, S. C.; Menendez, J.; Kouvetakis, J.

    2014-03-01

    Using spectroscopic ellipsometry, we determined the strain of a Ge epilayer grown on a Si (100) substrate. This strain depends on the sample temperature and arises because of the difference in thermal expansion coefficients between Si and Ge. It can be calculated since the thermal expansion coefficients of Si and Ge are known very precisely, if we assume that the Ge epilayer was fully relaxed at the growth temperature, leading to an increase in strain as the temperature decreases. We calculate in-plane tensile strain values of 0.12% at 300 K or 0.19% at 77K for our Ge on Si layer, that compares favorably with an in-plane strain of 0.11% derived from shifts of the Ge lattice reflection at 300 K by x-ray diffraction. This temperature-dependent strain affects the energies of the E1 and E1+Delta1 critical points of the Ge epilayer, which can be measured very precisely using spectroscopic ellipsometry from 77 to 800 K.From the difference in the critical point energies between our Ge epilayers on Si and bulk Ge (up to 20 meV), we can calculate the strain from the known elastic constants and deformation potentials. The strain determined from ellipsometry agrees well with the strain calculated from the temperature-dependent thermal expansion coefficient. This work was supported by AFOSR, Award Number FA9550-13-1-0022.

  9. Fabrication and ferromagnetism of Si-SiGe/MnGe core-shell nanopillars.

    PubMed

    Wang, Liming; Liu, Tao; Wang, Shuguang; Zhong, Zhenyang; Jia, Quanjie; Jiang, Zuimin

    2016-10-01

    Si-Si0.5Ge0.5/Mn0.08Ge0.92 core-shell nanopillar samples were fabricated on ordered Si nanopillar patterned substrates by molecular beam epitaxy at low temperatures. The magnetic properties of the samples are found to depend heavily on the growth temperature of the MnGe layer. The sample grown at a moderate temperature of 300 °C has the highest Curie temperature of 240 K as well as the strongest ferromagnetic signals. On the basis of the microstructural results, the ferromagnetic properties of the samples are believed to come from the intrinsic Mn-doped amorphous or crystalline Ge ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. After being annealed at a temperature of 500 °C, all the samples exhibit the same Curie temperature of 220 K, which is in sharp contrast to the different Curie temperature for the as-grown samples, and the ferromagnetism for the annealed samples comes from Mn5GeSi2 compounds which are formed during the annealing. PMID:27581545

  10. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect

    Cecchi, S. Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si{sub 1−x}Ge{sub x} buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1−x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  11. Fabrication and ferromagnetism of Si-SiGe/MnGe core-shell nanopillars.

    PubMed

    Wang, Liming; Liu, Tao; Wang, Shuguang; Zhong, Zhenyang; Jia, Quanjie; Jiang, Zuimin

    2016-10-01

    Si-Si0.5Ge0.5/Mn0.08Ge0.92 core-shell nanopillar samples were fabricated on ordered Si nanopillar patterned substrates by molecular beam epitaxy at low temperatures. The magnetic properties of the samples are found to depend heavily on the growth temperature of the MnGe layer. The sample grown at a moderate temperature of 300 °C has the highest Curie temperature of 240 K as well as the strongest ferromagnetic signals. On the basis of the microstructural results, the ferromagnetic properties of the samples are believed to come from the intrinsic Mn-doped amorphous or crystalline Ge ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. After being annealed at a temperature of 500 °C, all the samples exhibit the same Curie temperature of 220 K, which is in sharp contrast to the different Curie temperature for the as-grown samples, and the ferromagnetism for the annealed samples comes from Mn5GeSi2 compounds which are formed during the annealing.

  12. Fabrication and ferromagnetism of Si-SiGe/MnGe core-shell nanopillars

    NASA Astrophysics Data System (ADS)

    Wang, Liming; Liu, Tao; Wang, Shuguang; Zhong, Zhenyang; Jia, Quanjie; Jiang, Zuimin

    2016-10-01

    Si-Si0.5Ge0.5/Mn0.08Ge0.92 core-shell nanopillar samples were fabricated on ordered Si nanopillar patterned substrates by molecular beam epitaxy at low temperatures. The magnetic properties of the samples are found to depend heavily on the growth temperature of the MnGe layer. The sample grown at a moderate temperature of 300 °C has the highest Curie temperature of 240 K as well as the strongest ferromagnetic signals. On the basis of the microstructural results, the ferromagnetic properties of the samples are believed to come from the intrinsic Mn-doped amorphous or crystalline Ge ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. After being annealed at a temperature of 500 °C, all the samples exhibit the same Curie temperature of 220 K, which is in sharp contrast to the different Curie temperature for the as-grown samples, and the ferromagnetism for the annealed samples comes from Mn5GeSi2 compounds which are formed during the annealing.

  13. Toward multi-GeV electron cooling

    SciTech Connect

    Larson, D.J.; Cline, D.B.; Anderson, D.R.; Adney, J.R.; Sundquist, M.L.; Mills, F.E.

    1986-10-15

    We discuss progress being made in the development of an ampere intensity MeV recirculating electron beam system. The system is presently intended for the upgrading of antiproton sources, but is also ideally suited for ion beam cooling in the GeV energy range. We present results of a theoretical study applying intermediate energy electron cooling in to the Fermilab antiproton source, a brief overview of the design of the electron cooler, and discuss progress on the assembly and test of the system.

  14. Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

    NASA Astrophysics Data System (ADS)

    Takai, Mikio; Tanigawa, Takaho; Minamisono, Tadanori; Gamo, Kenji; Namba, Susumu

    1984-05-01

    Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.

  15. Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1997-01-01

    Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

  16. Pt- and Au-induced monodirectional nanowires on Ge(110)

    NASA Astrophysics Data System (ADS)

    Watanabe, T.; Yamada, Y.; Sasaki, M.; Sakai, S.; Yamauchi, Y.

    2016-11-01

    The adsorption of Pt or Au on Ge(110) and subsequent annealing resulted in formation of well-ordered monodirectional nanowires (NWs) throughout the surface over a cm-scale. The NWs were aligned along the [ 1 1 bar 0] direction, independent of the surface reconstruction of Ge(110). Metastable-atom deexcitation spectroscopy of Pt-NWs revealed that the topmost part of the NWs comprised Ge atoms, suggesting the exchange of the Ge and metal atoms, leaving an ultrathin Ge layer on top of the NWs. The increase in the electronic density of state near the Fermi energy was observed from both the MDS and UPS spectra of the Pt-NWs, suggesting a metallicity of the NWs.

  17. Ge doping of GaN beyond the Mott transition

    NASA Astrophysics Data System (ADS)

    Ajay, A.; Schörmann, J.; Jiménez-Rodriguez, M.; Lim, C. B.; Walther, F.; Rohnke, M.; Mouton, I.; Amichi, L.; Bougerol, C.; Den Hertog, M. I.; Eickhoff, M.; Monroy, E.

    2016-11-01

    We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7  ×  1020 cm‑3 at 300 K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron–electron and electron–ion interaction, and Burstein–Moss effect.

  18. The Shopping Center. Intermediate.

    ERIC Educational Resources Information Center

    Timmons, Darrell; And Others

    This teaching guide is designed to develop thinking skills of intermediate elementary school children by using the concept of a shopping center. Thinking skills defined in the guide are observing, recalling, noticing differences and similarities, ordering, grouping, concept labeling, classifying, concept testing, inferring causes and effects,…

  19. Water oxidation: Intermediate identification

    NASA Astrophysics Data System (ADS)

    Cowan, Alexander J.

    2016-08-01

    The slow kinetics of light-driven water oxidation on haematite is an important factor limiting the material's efficiency. Now, an intermediate of the water-splitting reaction has been identified offering hope that the full mechanism will soon be resolved.

  20. Sara Intermediate Course.

    ERIC Educational Resources Information Center

    Thayer, James E.; Maraby, Julien

    This volume consists of an intermediate course in Sara, a language of the Chad Republic of Africa. It is designed for native speakers of English and includes forty reading selections in Sara and an English translation of each selection. The readings are followed by a corresponding set of dialogues in Sara, accompanied by an English translation.…

  1. Intermediate Mathematics Study Guide.

    ERIC Educational Resources Information Center

    Stanford Univ., CA. School Mathematics Study Group.

    This SMSG study guide is intended to provide teachers who use "Intermediate Mathematics," as a textbook with references to materials which will help them to gain a better understanding of the mathematics contained in the text. For each chapter of the text a brief resume of its content is followed by a list of annotated references which are…

  2. SPACE: Intermediate Level Modules.

    ERIC Educational Resources Information Center

    Indiana State Dept. of Education, Indianapolis. Center for School Improvement and Performance.

    These modules were developed to assist teachers at the intermediate level to move away from extensive skill practice and toward more meaningful interdisciplinary learning. This packet, to be used by teachers in the summer Extended Learning Program, provides detailed thematic lesson plans matched to the Indiana Curriculum Proficiency Guide. The…

  3. Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

    SciTech Connect

    Lin, Guangyang; Tang, Mengrao; Li, Cheng Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan

    2013-12-16

    In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58 eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

  4. Structure and bonding in photodiffused amorphous Ag-GeSe/sub 2/ thin films

    SciTech Connect

    Fischer-Colbrie, A.; Bienenstock, A.; Fuoss, P.H.; Marcus, M.A.

    1988-12-15

    Grazing-incidence x-ray scattering (GIXS) techniques have been used to study the local and intermediate-range order in photodiffused amorphous Ag-GeSe/sub 2/ thin films and a variety of Ag-Ge-Se alloys. Using synchrotron-radiation sources, the GIXS technique can be used in conjunction with radial-distribution-function analysis, differential anomalous x-ray scattering, and differential distribution-function analysis to study the structure of very thin amorphous films. With these techniques, we have determined that the local atomic structure of Ag-GeSe/sub 2/ films satisfies a model where Se-Ag dative bonds are formed, one Se-Ag covalent bond is formed for each Ag atom added (below a critical composition), and Ge-Ge bonds are created as Ag is added. This last result significantly modifies the intermediate-range order in this system.

  5. Atomistic simulation of damage accumulation and amorphization in Ge

    SciTech Connect

    Gomez-Selles, Jose L. Martin-Bragado, Ignacio; Claverie, Alain; Benistant, Francis

    2015-02-07

    Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.

  6. Effect of Sn implantation on thermal stability improvement of NiSiGe

    NASA Astrophysics Data System (ADS)

    Zhang, B.; Meng, X.; Ping, Y.; Yu, W.; Xue, Z.; Wei, X.; Di, Z.; Zhang, M.; Wang, X.

    2015-12-01

    We study the formation of nickel-germanosilicide (NiSiGe) on Sn ion pre-implanted Si0.8Ge0.2 layers. The Sn influences on NiSiGe morphology and sheet resistance are investigated at different annealing temperature. The NiSiGe films were characterized by scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS), cross-section transmission electron microscopy (XTEM), and Energy Dispersive X-ray spectrometer (EDX) techniques. It is shown that the presence of Sn atoms increases the thermal stability of NiSiGe about 150 °C. We demonstrate that the Sn atoms retard the Ni germanosilicidation rate, stabilize the NiSiGe phase, and smooth the NiSiGe/SiGe interface.

  7. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  8. Modeling of intermediate phase growth

    SciTech Connect

    Umantsev, A.

    2007-01-15

    We introduced a continuum method for modeling of intermediate phase growth and numerically simulated three common experimental situations relevant to the physical metallurgy of soldering: growth of intermetallic compound layer from an unlimited amount of liquid and solid solders and growth of the compound from limited amounts of liquid solder. We found qualitative agreements with the experimental regimes of growth in all cases. For instance, the layer expands in both directions with respect to the base line when it grows from solid solder, and grows into the copper phase when the solder is molten. The quantitative agreement with the sharp-interface approximation was also achieved in these cases. In the cases of limited amounts of liquid solder we found the point of turnaround when the compound/solder boundary changed the direction of its motion. Although such behavior had been previously observed experimentally, the simulations revealed important information: the turnaround occurs approximately at the time of complete saturation of solder with copper. This result allows us to conclude that coarsening of the intermetallic compound structure starts only after the solder is practically saturated with copper.

  9. Improvement of J(sc) in a Cu2ZnSnS4 Solar Cell by Using a Thin Carbon Intermediate Layer at the Cu2ZnSnS4/Mo Interface.

    PubMed

    Zhou, Fangzhou; Zeng, Fangqin; Liu, Xu; Liu, Fangyang; Song, Ning; Yan, Chang; Pu, Aobo; Park, Jongsung; Sun, Kaiwen; Hao, Xiaojing

    2015-10-21

    Back contact modification plays an important role in improving energy conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, an ultrathin carbon layer is introduced on molybdenum (Mo)-coated soda lime glass (SLG) prior to the deposition of CZTS precursor to improve the back contact and therefore enhance CZTS solar cell efficiency. By introducing this layer, the short circuit current (Jsc) and device conversion efficiency increase for both nonvacuum (sol-gel) and vacuum (sputtering) methods. Specifically, for the sol-gel based process, Jsc increases from 13.60 to 16.96 mA/cm(2) and efficiency from 4.47% to 5.52%, while for the sputtering based process, Jsc increases from 17.50 to 20.50 mA/cm(2) and efficiency from 4.10% to 5.20%. Furthermore, introduction of this layer does not lead to any deterioration of either open circuit voltage (Voc) or fill factor (FF). PMID:26418196

  10. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F.

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  11. Compositional Dependence of the Optical Properties of Vacuum Evaporated Thin GeSe2-GeTe-PbTe Films

    NASA Astrophysics Data System (ADS)

    Petkov, Kiril; Tasseva, Jordanka; Vassilev, Venceslav; Aljihmani, Lilia

    Chalcogenide glasses from the GeSe2-GeTe-PbTe system were synthesized by taking preliminary prepared GeSe2, GeTe and PbTe in their molecular percentages and melting them in an evacuated quartz ampoule. Thin films were deposited on optical glass substrates BK-7 and Si-wafer substrates by thermal evaporation. Using X-ray microanalysis it was found that the film composition differs to a certain degree from the bulk composition. The changes in the optical properties of thin GeSe2-GeTe-PbTe films were studied as a function of their composition, exposure to light and annealing. It is shown by XRD analysis that the thin films are amorphous up to layers with composition of Ge27Se51Te14Pb8. The optical constants (refractive index, n and absorption coefficient, α), the thickness, d as well as the optical band gap, Eg, depending on the film composition were determined by spectrophotometric measurements in the region 450-2500 nm applying the Swanepoel's envelop method and Tauc's procedure. With the increase of the Te content in the layers, the absorption edge is shifted to the higher wavelengths, the refractive index increases from 2.54 for Ge31Se66Te3 up to 3.37 for Ge32Se55Te13 while the optical band gap decreases from 1.86 eV for to 1.30 eV for the same compositions. Similar dependence was observed with the increase of the PbTe content in the layers. After annealing of thin films, the values of n decrease, the optical band gap increases and a shift of the absorption edge to the shorter wavelengths is observed.

  12. Critical thickness for strain relaxation of Ge1-xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Zhou, Qian; Dong, Yuan; Tok, Eng Soon; Yeo, Yee-Chia

    2015-06-01

    We investigated the critical thickness (hc) for plastic relaxation of Ge1-xSnx grown by molecular beam epitaxy. Ge1-xSnx films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge1-xSnx films and the hc were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured hc values of Ge1-xSnx layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also used to predict the hc values in Ge1-xSnx/Ge system. The measured hc values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.

  13. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect

    Oya, N.; Toko, K. Suemasu, T.; Saitoh, N.; Yoshizawa, N.

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  14. The Intermediate Neutrino Program

    SciTech Connect

    Adams, C.; et al.

    2015-03-23

    The US neutrino community gathered at the Workshop on the Intermediate Neutrino Program (WINP) at Brookhaven National Laboratory February 4-6, 2015 to explore opportunities in neutrino physics over the next five to ten years. Scientists from particle, astroparticle and nuclear physics participated in the workshop. The workshop examined promising opportunities for neutrino physics in the intermediate term, including possible new small to mid-scale experiments, US contributions to large experiments, upgrades to existing experiments, R&D plans and theory. The workshop was organized into two sets of parallel working group sessions, divided by physics topics and technology. Physics working groups covered topics on Sterile Neutrinos, Neutrino Mixing, Neutrino Interactions, Neutrino Properties and Astrophysical Neutrinos. Technology sessions were organized into Theory, Short-Baseline Accelerator Neutrinos, Reactor Neutrinos, Detector R&D and Source, Cyclotron and Meson Decay at Rest sessions.This report summarizes discussion and conclusions from the workshop.

  15. Intermediate water recovery system

    NASA Technical Reports Server (NTRS)

    Deckman, G.; Anderson, A. R. (Editor)

    1973-01-01

    A water recovery system for collecting, storing, and processing urine, wash water, and humidity condensates from a crew of three aboard a spacecraft is described. The results of a 30-day test performed on a breadboard system are presented. The intermediate water recovery system produced clear, sterile, water with a 96.4 percent recovery rate from the processed urine. Recommendations for improving the system are included.

  16. Modeling DNA Replication Intermediates

    SciTech Connect

    Broyde, S.; Roy, D.; Shapiro, R.

    1997-06-01

    While there is now available a great deal of information on double stranded DNA from X-ray crystallography, high resolution NMR and computer modeling, very little is known about structures that are representative of the DNA core of replication intermediates. DNA replication occurs at a single strand/double strand junction and bulged out intermediates near the junction can lead to frameshift mutations. The single stranded domains are particularly challenging. Our interest is focused on strategies for modeling the DNA of these types of replication intermediates. Modeling such structures presents special problems in addressing the multiple minimum problem and in treating the electrostatic component of the force field. We are testing a number of search strategies for locating low energy structures of these types and we are also investigating two different distance dependent dielectric functions in the coulombic term of the force field. We are studying both unmodified DNA and DNA damaged by aromatic amines, carcinogens present in the environment in tobacco smoke, barbecued meats and automobile exhaust. The nature of the structure adopted by the carcinogen modified DNA at the replication fork plays a key role in determining whether the carcinogen will cause a mutation during replication that can initiate the carcinogenic process. In the present work results are presented for unmodified DNA.

  17. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    SciTech Connect

    Molle, Alessandro; Baldovino, Silvia; Fanciulli, Marco; Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  18. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect

    Gunasekera, K.; Boolchand, P.; Micoulaut, M.

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1−2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and intermediate phase, where network rigidity onsets as the content x of Group IV atoms (Ge, Si) are increased. The structural manifestation of these anomalies is understood from  {sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x≃ 8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  19. Analytical response function for planar Ge detectors

    NASA Astrophysics Data System (ADS)

    García-Alvarez, Juan A.; Maidana, Nora L.; Vanin, Vito R.; Fernández-Varea, José M.

    2016-04-01

    We model the response function (RF) of planar HPGe x-ray spectrometers for photon energies between around 10 keV and 100 keV. The RF is based on the proposal of Seltzer [1981. Nucl. Instrum. Methods 188, 133-151] and takes into account the full-energy absorption in the Ge active volume, the escape of Ge Kα and Kβ x-rays and the escape of photons after one Compton interaction. The relativistic impulse approximation is employed instead of the Klein-Nishina formula to describe incoherent photon scattering in the Ge crystal. We also incorporate a simple model for the continuous component of the spectrum produced by the escape of photo-electrons from the active volume. In our calculations we include external interaction contributions to the RF: (i) the incoherent scattering effects caused by the detector's Be window and (ii) the spectrum produced by photo-electrons emitted in the Ge dead layer that reach the active volume. The analytical RF model is compared with pulse-height spectra simulated using the PENELOPE Monte Carlo code.

  20. Effect of Boron on Solid Phase Epitaxy of Ge on Si(111) Surface

    NASA Astrophysics Data System (ADS)

    Yamamoto, Tomonori; Ikeda, Makoto; Ezoe, Kenji; Ishii, Kunihiro; Matsumoto, Satoru

    2000-07-01

    The effect of boron(B) on the growth of Germanium(Ge) by solid phase epitaxy (SPE) on Si(111) has been investigated using scanning tunneling microscopy in ultra-high-vacuum (UHV) and atomic force microscopy in the tapping mode in air. After annealing 1 mono-layer(ML) of amorphous Ge (a-Ge) at 500°C on a \\sqrt{3}×\\sqrt{3}R30°-B surface, it is found that B segregates to the Ge surface and induces the \\sqrt{3}×\\sqrt{3}R30° structure. For 6 ML, the surface structures of Ge exhibit a mixture of 5× 5 and \\sqrt{3}×\\sqrt{3}R30° areas. The \\sqrt{3}×\\sqrt{3}R30° areas show the presence of B, while the 5× 5 areas show the absence of B@. Moreover, 3-dimensional(D) islands are formed only on the 5× 5 areas of the surface. Another set of experiments is also performed, i.e. 1/3 ML of B is deposited on top of a-Ge, followed by annealing at 500°C. This B-deposited Ge film grows in a layer-by-layer mode up to 10 ML@. At larger Ge thicknesses, relaxed 3D islands of Ge are formed on the surface as in normal Ge/Si heteroepitaxial growth. The promotion of layer growth is attributed to the reduction of Ge surface mobility by the B layer on the Ge surface.

  1. Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

    PubMed

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick S; Xie, Yuantao; Heremans, Jean J

    2015-10-14

    The magnetotransport properties of epitaxial Ge/AlAs heterostructures with different growth conditions and substrate architectures have been studied under ±9 T magnetic field and at 390 mK temperature. Systematic mobility measurements of germanium (Ge) epilayers grown on GaAs substrates at growth temperatures from 350 to 450 °C allow us to extract a precise growth window for device-quality Ge, corroborated by structural and morphological properties. Our results on Si substrate using a composite metamorphic AlAs/GaAs buffer at 400 °C Ge growth temperature, show that the Ge/AlAs system can be tailored to have a single carrier transport while keeping the charge solely in the Ge layer. Single carrier transport confined to the Ge layer is demonstrated by the weak-localization quantum correction to the conductivity observed at low magnetic fields and 390 mK temperature. The weak localization effect points to a near-absence of spin-orbit interaction for carriers in the electronically active layer and is used here for the first time to pinpoint Ge as this active layer. Thus, the epitaxial Ge grown on Si using AlAs/GaAs buffer architecture is a promising candidate for next-generation energy-efficient fin field-effect transistor applications.

  2. Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

    NASA Technical Reports Server (NTRS)

    Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

    2013-01-01

    State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

  3. Possible source of intermediate ions over marine environment.

    PubMed

    Pawar, Sunil D; Gopalakrishnan, V

    2012-01-01

    Measurements of small, intermediate and large ions made onboard ORV Sagarkanya over the Arabian Sea in May-June 2003 during Arabian Sea Monsoon Experiment (ARMEX) are reported here. The daily averaged values of small-, intermediate-, and large-ion concentrations measured for 36 days during this cruise have been used for analysis. The analysis shows a weak positive correlation of 0.14 between intermediate- and large-ion concentrations, which indicates that the sources of these two types of ions are different over ocean surface. The negative correlation is observed between small- and intermediate-ion concentration for entire period of cruise. In addition, it is seen that the intermediate-ion concentration shows a very good (r = 0.58) and significant positive correlation with sea surface pressure. Based on good negative correlation between small- and intermediate-ion concentrations and good positive correlation between intermediate-ion concentration and sea surface pressure, it has been proposed that attachment of small ions to the ultrafine particles transported from upper troposphere to marine boundary layer is the main source of intermediate ions over ocean surface. This study supports the idea that the main source of ultrafine particles over marine boundary layer (MBL) is entrainment of aerosol particles from the free troposphere. PMID:22701357

  4. Possible source of intermediate ions over marine environment.

    PubMed

    Pawar, Sunil D; Gopalakrishnan, V

    2012-01-01

    Measurements of small, intermediate and large ions made onboard ORV Sagarkanya over the Arabian Sea in May-June 2003 during Arabian Sea Monsoon Experiment (ARMEX) are reported here. The daily averaged values of small-, intermediate-, and large-ion concentrations measured for 36 days during this cruise have been used for analysis. The analysis shows a weak positive correlation of 0.14 between intermediate- and large-ion concentrations, which indicates that the sources of these two types of ions are different over ocean surface. The negative correlation is observed between small- and intermediate-ion concentration for entire period of cruise. In addition, it is seen that the intermediate-ion concentration shows a very good (r = 0.58) and significant positive correlation with sea surface pressure. Based on good negative correlation between small- and intermediate-ion concentrations and good positive correlation between intermediate-ion concentration and sea surface pressure, it has been proposed that attachment of small ions to the ultrafine particles transported from upper troposphere to marine boundary layer is the main source of intermediate ions over ocean surface. This study supports the idea that the main source of ultrafine particles over marine boundary layer (MBL) is entrainment of aerosol particles from the free troposphere.

  5. Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    SciTech Connect

    Toko, K. Numata, R.; Oya, N.; Suemasu, T.; Fukata, N.; Usami, N.

    2014-01-13

    The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

  6. Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices

    NASA Astrophysics Data System (ADS)

    Chae, B.-G.; Seol, J.-B.; Song, J.-H.; Jung, W.-Y.; Hwang, H.; Park, C.-G.

    2016-09-01

    Fabrication of phase-change memory devices at modest or ambient temperatures leads to nanoscale compositional variations in phase-transition layers, where amorphous-polycrystalline phase change takes place via electrical switching, and can alter the device's performances. Here, by transmission electron microscopy and atom probe tomography, we address that thermal annealing at 400 °C for 20 min induces an elemental interdiffusion in the devices consisting of TiN (top electrode), carbon-doped GeSbTe (phase-transition layer), and TiSiN (bottom heater). With respect to the employed annealing process, the Ge atoms of GeSbTe layer have diffused into TiSiN layer at a given sample volume, while the Ti atoms of TiSiN layer into GeSbTe layer. Furthermore, non-random nature of dopant distribution in the GeSbTe materials leads to a Ti-localization including dopants at the GeSbTe/TiSiN interfaces. Our findings have two important implications: First, the annealing-driven interdiffusion of Ge and Ti is a predominant mechanism responsible for nanoscale compositional variations in GeSbTe layer; second, such an interdiffusion and the resultant dopant localization play a crucial role on the driving force for amorphous-polycrystalline transition of GeSbTe-based memory devices.

  7. Kesterite Cu2Zn(Sn,Ge)(S,Se)4 thin film with controlled Ge-doping for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Zhao, Wangen; Pan, Daocheng; Liu, Shengzhong (Frank)

    2016-05-01

    Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer.Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer. Electronic supplementary information (ESI) available: The XRD patterns, chemical component analysis, top-view and cross-sectional images, and XPS of CZTGSSe thin films with different Ge content are exhibited. See DOI: 10.1039/c6nr00959j

  8. Grand unification and intermediate scale supersymmetry

    NASA Astrophysics Data System (ADS)

    Hall, Lawrence J.; Nomura, Yasunori

    2014-02-01

    With minimal field content and for an interesting range of the supersymmetric Higgs mixing parameter, 0.5 ≲ tan2 β ≲ 2, the superpartner mass scale, , is found to be at the intermediate scale, ~ 1010±1 GeV, near where the Standard Model Higgs quartic coupling passes through zero. For any 4d supersymmetric grand unified symmetry spontaneously broken by a vacuum expectation value <Σ>, if superpotential interactions for Σ are forbidden e.g. by R symmetries, the uneaten color octet, Σ8, and weak triplet, Σ3, have masses of order m. The combination of superpartner and Σ8,3 states leads to successful gauge coupling unification, removing the disastrously high proton decay rate of minimal Standard Model unification. Proton decay could be seen in future experiments if ~ 1011 GeV,but not if it is lower. If there heating temperature after inflation, T R , is less than dark matter may be axions. If T R > , thermal LSP dark matter may lead to the environmental selection of a TeV-scale LSP, either wino or Higgsino, which could comprise all or just one component of dark matter. In the Higgsino case, the dark matter is found to behave inelastically in direct detection experiments, and gauge coupling unification occurs accurately without the need of any threshold corrections.

  9. Silver photo-diffusion and photo-induced macroscopic surface deformation of Ge33S67/Ag/Si substrate

    NASA Astrophysics Data System (ADS)

    Sakaguchi, Y.; Asaoka, H.; Uozumi, Y.; Kondo, K.; Yamazaki, D.; Soyama, K.; Ailavajhala, M.; Mitkova, M.

    2016-08-01

    Ge-chalcogenide films show various photo-induced changes, and silver photo-diffusion is one of them which attracts lots of interest. In this paper, we report how silver and Ge-chalcogenide layers in Ge33S67/Ag/Si substrate stacks change under light exposure in the depth by measuring time-resolved neutron reflectivity. It was found from the measurement that Ag ions diffuse all over the matrix Ge33S67 layer once Ag dissolves into the layer. We also found that the surface was macroscopically deformed by the extended light exposure. Its structural origin was investigated by a scanning electron microscopy.

  10. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon; Ksendzov, A.; Dejewski, Suzan M.; Jones, Eric W.; Fathauer, Robert W.; Krabach, Timothy N.; Maserjian, Joseph

    1991-01-01

    A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

  11. Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars

    NASA Astrophysics Data System (ADS)

    Wu, Zilong; Lei, Hui; Zhou, Tong; Fan, Yongliang; Zhong, Zhenyang

    2014-02-01

    Controlled SiGe coaxial quantum wells (CQWs) on periodic Si(001) nanopillars in a large area are explored systematically. The periodic SiGe CQW nanopillars are fabricated by a combination of nanosphere lithography, metal assisted chemical etching and epitaxial growth. The period, the radius, the height, the composition and the thickness of the SiGe alloy layer can all be intentionally modified. Considerably enhanced photoluminescence (PL) from the SiGe CQW nanopillars is observed, which is composed of four peaks. Such PL features are explained by the coupling between the spontaneous emissions of the SiGe CQW and the Mie resonant modes of the nanopillars, which can be further improved by optimizing the structural parameters of the SiGe CQW and the nanopillars. Our results demonstrate a feasible route to obtaining controlled SiGe CQW nanopillars, which have potential applications in optoelectronic devices.

  12. Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

    SciTech Connect

    Talochkin, A. B.; Mashanov, V. I.

    2014-12-29

    GeSn alloys grown on Si(100) by the low-temperature (100 °C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the formation of small Ge islands surrounded by amorphous Ge, in the presence of Sn, the growth of pure Ge islands appears via the Stranski-Krastanov growth mode, and a partially relaxed Ge{sub 1−x}Sn{sub x} alloy layer with the high Sn-fraction up to 40 at. % is formed in the area between them. It is shown that the observed growth mode induced by high surface mobility of Sn and the large strain of the pseudomorphic state of Ge to Si ensures the minimum elastic-strain energy of the structure.

  13. Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

    PubMed Central

    Yamasaka, Shuto; Nakamura, Yoshiaki; Ueda, Tomohiro; Takeuchi, Shotaro; Sakai, Akira

    2015-01-01

    Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal conductivities than those of the conventional nanostructured SiGe bulk alloys, despite the stacked structures having a smaller Ge fraction. This came from the large thermal resistance caused by phonon scattering at the Si/Ge ND interfaces. The phonon scattering can be controlled by the Ge ND structure, which was independent of Si layer structure for carrier transport. These results demonstrate the effectiveness of ultrasmall epitaxial Ge NDs as phonon scattering sources, opening up a route for the realisation of Si-based thermoelectric materials. PMID:26434678

  14. Intermediate connector for stacked organic light emitting devices

    DOEpatents

    D& #x27; Andrade, Brian

    2013-02-12

    A device is provided, having an anode, a cathode, and an intermediate connector disposed between the anode and the cathode. A first organic layer including an emissive sublayer is disposed between the anode and the intermediate connector, and a second including an emissive sublayer is disposed between the intermediate connector and the cathode. The intermediate connector includes a first metal having a work function lower than 4.0 eV and a second metal having a work function lower than 5.0 eV. The work function of the first metal is at least 0.5 eV less than the work function of the second metal. The first metal is in contact with a sublayer of the second organic layer that includes a material well adapted to receive holes from a low work function metal.

  15. Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

    NASA Astrophysics Data System (ADS)

    Morita, Yukinori; Fukuda, Koichi; Mori, Takahiro; Mizubayashi, Wataru; Migita, Shinji; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Matsukawa, Takashi; Ota, Hiroyuki

    2016-04-01

    A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

  16. Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

    NASA Astrophysics Data System (ADS)

    Lee, Joon Sung; Kaufman-Osborn, Tobin; Melitz, Wilhelm; Lee, Sangyeob; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Pourtois, Geoffrey; Kummel, Andrew C.

    2011-08-01

    The direct reaction of trimethylaluminum (TMA) on a Ge(100) surface and the effects of monolayer H2O pre-dosing were investigated using ultrahigh vacuum techniques, such as scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT). At room temperature (RT), a saturation TMA dose produced 0.8 monolayers (ML) of semi-ordered species on a Ge(100) surface due to the dissociative chemisorption of TMA. STS confirmed the chemisorption of TMA passivated the bandgap states due to dangling bonds. By annealing the TMA-dosed Ge surface, the STM observed coverage of TMA sites decreased to 0.4 ML at 250 °C, and to 0.15 ML at 450 °C. XPS analysis showed that only carbon content was reduced during annealing, while the Al coverage was maintained at 0.15 ML, consistent with the desorption of methyl (-CH3) groups from the TMA adsorbates. Conversely, saturation TMA dosing at RT on the monolayer H2O pre-dosed Ge(100) surface followed by annealing at 200 °C formed a layer of Ge-O-Al bonds with an Al coverage a factor of two greater than the TMA only dosed Ge(100), consistent with Ge-OH activation of TMA chemisorption and Ge-H blocking of CH3 chemisorption. The DFT shows that the reaction of TMA has lower activation energy and is more exothermic on Ge-OH than Ge-H sites. It is proposed that the H2O pre-dosing enhances the concentration of adsorbed Al and forms thermally stable Ge-O-Al bonds along the Ge dimer row which could serve as a nearly ideal atomic layer deposition nucleation layer on Ge(100) surface.

  17. INTERMEDIATE-ENERGY LIGHT SOURCES

    SciTech Connect

    Corbett, William

    2002-11-25

    Increasingly, atomic scale information underlies scientific and technological progress in disciplines ranging from pharmaceutical development to materials synthesis to environmental remediation. While a variety of research tools are used to provide atomic scale information, synchrotron radiation has proved invaluable in this quest. The rapid growth of soft- and hard X-ray synchrotron light sources stands as stark testimony to the importance and utility of synchrotron radiation. Starting from just a handful of synchrotron light sources in the early 1970s, this burgeoning field now includes over 70 proposed, in-construction, or operating facilities in 23 countries on five continents. Along the way, synchrotron light facilities have evolved from small laboratories extracting light parasitically from storage rings designed for high-energy physics research to large, dedicated sources using the latest technology to produce extraordinarily bright photon beams. The basic layout of a multi-GeV storage ring light source employs periodic bending magnets to guide a charged particle beam around the storage ring. As the charged beam is accelerated in an arc, it produces a sweeping fan of synchrotron radiation that extends from the infrared part of the electromagnetic spectrum (<1 eV) to hard X rays (>20 keV). Quadrupole magnets keep the electrons tightly focused, and a radio-frequency acceleration system replenishes beam energy lost to radiation emission. To optimize the output radiation, a premium is placed on high current electron beams with small cross section and extreme position stability. Magnetic insertion devices are used to further enhance radiation output by a factor of 10 or more over bend magnet sources. The storage ring vacuum chamber includes exit ports to allow portions of the radiation fan to propagate down photon beam transport lines to optical systems and experimental stations. A typical storage ring features 10 or more such radiation ports. The photon beam

  18. High efficiency GaAs/Ge monolithic tandem solar cells

    NASA Technical Reports Server (NTRS)

    Tobin, S. P.; Vernon, S. M.; Bajgar, C.; Haven, V. E.; Geoffroy, L. M.; Sanfacon, M. M.; Lillington, D. R.; Hart, R. E., Jr.

    1988-01-01

    Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

  19. Structural investigations of the α12 Si–Ge superstructure

    PubMed Central

    Etzelstorfer, Tanja; Ahmadpor Monazam, Mohammad Reza; Cecchi, Stefano; Kriegner, Dominik; Chrastina, Daniel; Gatti, Eleonora; Grilli, Emanuele; Rosemann, Nils; Chatterjee, Sangam; Holý, Vaclav; Pezzoli, Fabio; Isella, Giovanni; Stangl, Julian

    2015-01-01

    This article1 reports the X-ray diffraction-based structural characterization of the α12 multilayer structure SiGe2Si2Ge2SiGe12 [d’Avezac, Luo, Chanier & Zunger (2012 ▶). Phys. Rev. Lett. 108, 027401], which is predicted to form a direct bandgap material. In particular, structural parameters of the superlattice such as thickness and composition as well as interface properties, are obtained. Moreover, it is found that Ge subsequently segregates into layers. These findings are used as input parameters for band structure calculations. It is shown that the direct bandgap properties depend very sensitively on deviations from the nominal structure, and only almost perfect structures can actually yield a direct bandgap. Photoluminescence emission possibly stemming from the superlattice structure is observed. PMID:26089750

  20. Synthesis and Structural Stability of Ti2GeC

    SciTech Connect

    Phatak, N.; Saxena, S; Fei, Y; Hu, J

    2009-01-01

    In this paper we report the synthesis of a ternary-layered ceramic, Ti2GeC, a 211 Mn+1AXn compound by hot-pressing. X-ray analysis confirmed the hexagonal crystal symmetry. Using a synchrotron radiation and a diamond anvil cell, we measured the pressure dependencies of the lattice parameters. The phase is structurally stable up to the 49 GPa-the maximum experimental pressure reached. The bulk modulus of Ti2GeC calculated using the Birch-Murnaghan equation of state is 211 {+-} 4 GPa with K? = 3.9 {+-} 0.2. Surprisingly the bulk modulus was found to be greater than both Ti2AlC and Ti2SC by 13% and 10%. Also, Ti2GeC has the highest bulk modulus among M2GeC phases where M = Ti, V, Cr.

  1. Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films

    SciTech Connect

    Zhang, Tianwei; Zhang, Weilin; Ma, Fei E-mail: kwxu@mail.xjtu.edu.cn; Huang, Yuhong; Xu, Kewei E-mail: kwxu@mail.xjtu.edu.cn

    2014-05-15

    Two types of bilayer thin films with different deposition sequences, i.e., amorphous Ge under Al (a-Ge/Al) and the inverse (Al/a-Ge), were prepared by magnetron sputtering at room temperature. In-situ and ex-situ thermal annealing were compared to study the effect of the stacking sequence on crystallization of amorphous Ge. Although metal-induced crystallization occurred in both cases at low temperature, layer exchange was observed only in a-Ge/Al. In fact, compressive stress could usually be produced when Ge atoms diffused into Al grain boundaries and crystallized there. In the a-Ge/Al system, the stress could be released through diffusion of Al atoms onto the surface and formation of hillocks. Thus, grain boundary (GB) mediated crystallization was dominant in the whole process and layer exchange occurred. However, in the Al/a-Ge system, it was difficult for stress to be relaxed because the Ge sublayer and substrate restricted the diffusion of Al atoms. GB-mediated crystallization was, therefore, considerably suppressed and interface-mediated crystallization was preferred without layer exchange. This leads to distinct morphologies of dendrites in the two systems.

  2. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  3. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    SciTech Connect

    Oshima, Yasuhiro; Sun, Yun; Kuzum, Duygu; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  4. Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM

    NASA Astrophysics Data System (ADS)

    Brill, G.; Smith, David J.; Chandrasekhar, D.; Gogotsi, Y.; Prociuk, A.; Sivananthan, S.

    1999-05-01

    Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.

  5. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  6. Elastic strain relaxation in axial Si/Ge whisker heterostructures

    SciTech Connect

    Hanke, M.; Eisenschmidt, C.; Werner, P.; Zakharov, N. D.; Syrowatka, F.; Heyroth, F.; Schaefer, P.; Konovalov, O.

    2007-04-15

    The elastic behavior of molecular beam epitaxy-grown SiGe/Si(111) nanowhiskers (NWs) has been studied by means of electron microscopy, x-ray scattering, and numerical linear elasticity theory. Highly brilliant synchrotron radiation was applied to map the diffusely scattered intensity near the asymmetric (115) reciprocal lattice point. The larger lattice parameter with respect to the Si matrix causes a lateral lattice expansion within embedded Ge layers. This enables a clear separation of scattering due to NWs and laterally confined areas aside. Finite element calculations prove a lateral lattice compression in the Si matrix close to the NW apex above buried threefold and single Ge layer stacks. This suggests an incorporation probability, which additionally depends on the radial position within heteroepitaxial NWs.

  7. Formation of ST12 phase Ge nanoparticles in ZnO thin films

    NASA Astrophysics Data System (ADS)

    Ceylan, Abdullah; Gumrukcu, Emre; Ozcan, Sadan

    2015-03-01

    In this work, we investigate the effects of reactive and nonreactive growth of ZnO on the rapid thermal annealing (RTA) induced formation of Ge nanoparticles (Ge-np) in ZnO: Ge nanocomposite thin films. The samples were deposited by sequential sputtering of ZnO and Ge thin film layers with a total thickness of about 600 nm on Si substrates followed by an ex-situ (RTA) at 600°C for 30, 60, 90, 120, 150, 180, and 210 s under forming gas atmosphere. In order for the reactive sputtering of ZnO layer, 5 mTorr Oxygen was introduced to the growth chamber. XRD and Raman analyses were utilized to investigate the effect of RTA time on the structural evolution of the samples. It has been realized that crystal structure of Ge nanoparticles is significantly affected by the growth method of the embedding ZnO layer. While reactive deposition of ZnO layers results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive deposition of ZnO layers leads to the formation of pure DC Ge-np upon RTA process. Formation of these two phases has been discussed based on the existence of native point defects such as oxygen vacancies and Zn interstitials.

  8. Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

    SciTech Connect

    Sadoh, Taizoh Chikita, Hironori; Miyao, Masanobu; Matsumura, Ryo

    2015-09-07

    Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealing (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.

  9. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R.

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  10. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  11. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  12. GeSn p-i-n waveguide photodetectors on silicon substrates

    SciTech Connect

    Peng, Yu-Hsiang; Chang, Guo-En; Cheng, H. H.; Mashanov, Vladimir I.

    2014-12-08

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

  13. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGES

    Henry, Michael David; Douglas, Erica Ann

    2016-08-31

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  14. Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

    PubMed

    Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

    2014-12-01

    Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

  15. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    NASA Astrophysics Data System (ADS)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  16. Effect of temperature on layer separation by plasma hydrogenation

    SciTech Connect

    Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Rossi, F.; Shao, L.; Thompson, P. E.

    2008-12-22

    We have studied hydrogen diffusion in plasma hydrogenated Si/SiGe/Si heterostructure at different temperatures. At low temperature, intrinsic point defects in the molecular beam epitaxy grown Si capping layer are found to compete with the buried strain SiGe layer for hydrogen trapping. The interaction of hydrogen with point defects affects the hydrogen long-range diffusion, and restricts the amount of hydrogen available for trapping by the SiGe layer. However, hydrogen trapping by the capping layer is attenuated with increasing hydrogenation temperature allowing more hydrogen to be trapped in the strain SiGe layer with subsequent surface blister formation. A potential temperature window for plasma hydrogenation induced layer separation is identified based on the combined considerations of trap-limited diffusion at low temperature and outdiffusion of H{sub 2} molecule together with the dissociation of Si-H bonds inside of H platelet at high temperature.

  17. Mixed Si/Ge nine-atom Zintl clusters: ESI mass spectrometric investigations and single-crystal structure determination of paramagnetic [Si(9-x)Ge(x)]3-.

    PubMed

    Waibel, Markus; Fässler, Thomas F

    2013-05-20

    Mixed Si/Ge compounds are of special interest as potential materials for photovoltaic applications. In order to evaluate the usage of soluble precursor compounds, we investigated the synthesis of heteroatomic nine-atom clusters that consist of Si and Ge atoms through dissolution of the ternary Zintl phases K12Si(17-x)Ge(x) (x = 9, 12) and Rb12Si(17-x)Ge(x) (x = 9). Electrospray ionization (ESI) mass spectrometry demonstrates the presence of mixed Si(9-x)Ge(x) clusters in acetonitrile solution. From ammonia solutions of the ternary phases, four compounds that contain 3-fold negatively charged [Si(9-x)Ge(x)](3-) clusters are obtained. The paramagnetic behavior is confirmed by EPR spectroscopy. [E9](3-) Zintl clusters are considered as intermediate structures in the stepwise oxidation of [E9](4-) clusters to novel element allotropes (E = Si-Pb). The structure of Rb[Rb-crypt]2[Si2.3(1)Ge6.7(1)](NH3)7 and the isostructural structures of [Rb-crypt]3[Si2.2(1)Ge6.8(1)](NH3)8, [K-crypt]3[Si2.4(1)Ge6.6(1)](NH3)8.5, and [K-crypt]3[Si4.6(1)Ge4.4(1)](NH3)8.5 are investigated by single-crystal X-ray diffraction (crypt = 4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo[8.8.8]-hexacosane). The Si/Ge ratio of the products correlates with the composition of the ternary precursor phases.

  18. Validation of Geant4 hadronic physics models at intermediate energies

    NASA Astrophysics Data System (ADS)

    Banerjee, Sunanda; Geant4 Hadronic Group

    2010-04-01

    GEANT4 provides a number of physics models at intermediate energies (corresponding to incident momenta in the range 1-20 GeV/c). Recently, these models have been validated with existing data from a number of experiments: (a) inclusive proton and neutron production with a variety of beams (π-, π+, p) at different energies between 1 and 9 GeV/c on a number of nuclear targets (from beryllium to uranium); (2) inclusive pion/kaon/proton production from 14.6 GeV/c proton beams on nuclear targets (from beryllium to gold); (3) inclusive pion production from pion beams between 3-13 GeV/c on a number of nuclear targets (from beryllium to lead). The results of simulation/data comparison for different GEANT4 models are discussed in the context of validating the models and determining their usage in physics lists for high energy application. Due to the increasing number of validations becoming available, and the requirement that they be done at regular intervals corresponding to the GEANT4 release schedule, automated methods of validation are being developed.

  19. Intermediate Filament Diseases: Desminopathy

    PubMed Central

    Goldfarb, Lev G.; Olivé, Montse; Vicart, Patrick; Goebel, Hans H.

    2009-01-01

    Desminopathy is one of the most common intermediate filament human disorders associated with mutations in closely interacting proteins, desmin and alphaB-crystallin. The inheritance pattern in familial desminopathy is characterized as autosomal dominant or autosomal recessive, but many cases have no family history. At least some and likely most sporadic desminopathy cases are associated with de novo DES mutations. The age of disease onset and rate of progression may vary depending on the type of inheritance and location of the causative mutation. Typically, the illness presents with lower and later upper limb muscle weakness slowly spreading to involve truncal, neck-flexor, facial and bulbar muscles. Skeletal myopathy is often combined with cardiomyopathy manifested by conduction blocks, arrhythmias and chronic heart failure resulting in premature sudden death. Respiratory muscle weakness is a major complication in some patients. Sections of the affected skeletal and cardiac muscles show abnormal fibre areas containing chimeric aggregates consisting of desmin and other cytoskeletal proteins. Various DES gene mutations: point mutations, an insertion, small in-frame deletions and a larger exon-skipping deletion, have been identified in desminopathy patients. The majority of these mutations are located in conserved alpha-helical segments, but additional mutations have recently been identified in the tail domain. Filament and network assembly studies indicate that most but not all disease-causing mutations make desmin assembly-incompetent and able to disrupt a pre-existing filamentous network in dominant-negative fashion. AlphaB-crystallin serves as a chaperone for desmin preventing its aggregation under various forms of stress; mutant CRYAB causes cardiac and skeletal myopathies identical to those resulting from DES mutations. PMID:19181099

  20. 75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-05

    ... COMMISSION GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID....\\3\\ The Commission alleged in the complaint (``Complaint'') that, from 2000 to 2003, four...

  1. Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules

    NASA Astrophysics Data System (ADS)

    Samarelli, A.; Llin, L. Ferre; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Gubler, E. Muller; Weaver, J. M. R.; Dobson, P.; Paul, D. J.

    2014-10-01

    Results for low dimensional p-type Ge/SiGe superlattices with Ge quantum wells of 3.43 nm are presented. A range of microfabricated test structures have been developed to characterise the cross-plane electrical and thermal properties of the Ge/SiGe heterostructures. These superlattices were directly grown on 100-mm-diameter silicon wafers by a chemical vapour deposition growth system with rates up to 6 nm/s. Quantum well and quantum mechanical tunnel barriers with dimensions down to nm have been designed, grown and tested; they demonstrate a ZT of 0.08 ± 0.011 and power factor of 1.34 ± 0.15 m W m-1 K-2 at 300 K. A complete microfabricated module using indium bump-bonding is reported together with preliminary results on unoptimised material and leg dimensions. Routes to optimise the material and modules are discussed.

  2. Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing

    NASA Astrophysics Data System (ADS)

    Liao, Ting-Wei; Chen, Hung-Ming; Shen, Kuan-Yuan; Kuan, Chieh-Hsiung

    2015-04-01

    In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal Ge NDs at room temperature. A wide bandgap SiO2 capping layer is used as a transparent thermally isolated layer to prevent thermal loss and Si-Ge intermixing. The two-dimensional pit-patterned Si substrate is designed to confine the absorbed laser energy, reduce the melting point, and block the surface migration of the Ge. After optimizing the laser radiation parameters such that the laser energy density is 200 mJ cm-2, the laser annealing period is 10 s, and the number of laser shots is 10, pure, single crystal Ge NDs that have both a regular arrangement and a uniform size distribution are obtained in the pits of the Si substrates. The Raman spectrum shows a highly symmetric Ge transversal optical peak with a full width at half maximum of 4.2 cm-1 at 300.7 cm-1, which is close to that of the original Ge wafer. In addition, the high-resolution transmission electron microscopy image for the Ge NDs and the corresponding selected area electron diffraction pattern shows a clear single crystalline structure without any impurities.

  3. Masonry. Performance Objectives. Intermediate Course.

    ERIC Educational Resources Information Center

    Thompson, Moses

    Several intermediate performance objectives and corresponding criterion measures are listed for each of 13 terminal objectives for an intermediate masonry course. These materials, developed for a two-semester (3 hours daily) course, are designed to provide the student with the skills and knowledge necessary for entry level employment in the field…

  4. Welding. Performance Objectives. Intermediate Course.

    ERIC Educational Resources Information Center

    Vincent, Kenneth

    Several intermediate performance objectives and corresponding criterion measures are listed for each of nine terminal objectives for an intermediate welding course. The materials were developed for a 36-week (3 hours daily) course designed to prepare the student for employment in the field of welding. Electric welding and specialized (TIG & MIG)…

  5. Printing. Performance Objectives. Intermediate Course.

    ERIC Educational Resources Information Center

    Seivert, Chester

    Several intermediate performance objectives and corresponding criterion measures are listed for each of 13 terminal objectives for an intermediate printing course. The materials were developed for a two-semester (3 hours daily) course with specialized classroom, shop, and practical experiences designed to enable the student to develop proficiency…

  6. EVALUATION OF TRANSPORTATION OPTIONS FOR INTERMEDIATE NON DESTRUCTIVE EXAMINATIONS

    SciTech Connect

    Case, Susan; Hoggard, Gary

    2014-07-01

    Idaho National Laboratory (INL) shipments of irradiated experiments from the Advanced Test Reactor (ATR) to the Hot Fuels Examination Facility (HFEF) have historically been accomplished using the General Electric Model 2000 (GE 2000) Type B shipping container. Battelle Energy Alliance (BEA) concerns regarding the future availability and leasing and handling costs associated with the GE 2000 cask have warranted an evaluation of alternative shipping options. One or more of these shipping options may be utilized to perform non destructive examinations (NDE) such as neutron radiography and precision gamma scans of irradiated experiments at HFEF and then return the experiments to ATR for further irradiation, hereafter referred to as “intermediate NDE.”

  7. Ge-rich silicon germanium as a new platform for optical interconnects on silicon

    NASA Astrophysics Data System (ADS)

    Vakarin, Vladyslav; Chaisakul, Papichaya; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Coudevylle, Jean Rene; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2016-05-01

    We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si1-xGex guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.

  8. Temperature and field dependent low frequency noise characterization of Ge n-FETs

    NASA Astrophysics Data System (ADS)

    Ghosh, Sayantan; Bhatt, Piyush; Tiwari, Yogesh; Joishi, Chandan; Lodha, Saurabh

    2016-09-01

    We report temperature (RT-150 K) and field dependent low frequency noise measurements on Ge n-FETs. Specifically, we delineate the temperature, field, and interfacial layer (GeON vs. GeO2) dependence of the gate overdrive index (β) on corresponding changes in volume interface trap density (Nit) and mobility (μ). For Nit < 1 × 1020 cm-3 eV-1, the dominant noise mechanism, number or mobility fluctuation, depends on the change in μ, but for Nit > 1 × 1020 cm-3eV-1 near the conduction band edge, changes in μ as well as Nit determine the noise mechanism. Finally, we show that the β values of Ge n-FETs are significantly different from conventional Si transistors as well as Ge p-FETs at RT and 150 K due to much higher Nit and/or μ values of the Ge n-FETs.

  9. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

    NASA Astrophysics Data System (ADS)

    Gontad, F.; Conde, J. C.; Chiussi, S.; Serra, C.; González, P.

    2016-01-01

    193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures of 3 μm diameter and around 25 nm total thickness, is presented. Amorphous patterns were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks and then irradiated with the same laser to induce structural and compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional and structural analyses demonstrated that pulses of 240 mJ/cm2 lead to graded SiGe alloys with Si rich discs of 2 μm diameter on top, a buried Ge layer, and Ge rich SiGe rings surrounding each feature, as predicted by previous numerical simulation.

  10. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect

    Pinto, S.; Roldan Gutierrez, Manuel A; Ramos, M. M.D.; Gomes, M.J.M.; Molina, S. I.; Pennycook, Stephen J; Varela del Arco, Maria; Buljan, M.; Barradas, N.; Alves, E.; Chahboun, A.; Bernstorff, S.

    2012-01-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  11. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  12. Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2 multilayers

    NASA Astrophysics Data System (ADS)

    Volodin, V. A.; Gambaryan, M. P.; Cherkov, A. G.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2016-08-01

    Germanium and GeSi nanocrystals were synthesized in SiGeO2 glass by high temperature annealings of GeOx(5 nm)/SiO2(5 nm) multilayers. According to electron microscopy data, the size distribution and stoichiometry of the nanocrystals depend on the annealing temperature (700, 800, or 900 °C). Spatial redistribution of Ge with the formation of large faceted nanocrystals located near the Si substrate and GeSi intermixing at the substrate/film interface were observed. In the case of the 900 °C annealed sample, we note that some nanocrystals have a pyramid-like shape. Infrared absorption spectroscopy demonstrates that intermixing takes place between the GeOx and SiO2 layers leading to the formation of SiGeO2 glass. Raman spectroscopy confirms the formation of Ge nanocrystals after annealing at 700 °C and GeSi nanocrystals after annealing at 800 and 900 °C. For all annealed samples, we report the observation of infrared photoluminescence (PL) at low temperatures in the spectral range 1300-2100 nm. The observation of PL at wavelengths close to 2000 nm may be due to defect-induced radiative transitions in the nanocrystals.

  13. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Mori, Daichi; Oka, Hiroshi; Hosoi, Takuji; Kawai, Kentaro; Morita, Mizuho; Crumlin, Ethan J.; Liu, Zhi; Watanabe, Heiji; Arima, Kenta

    2016-09-01

    The energy difference between the oxide and bulk peaks in X-ray photoelectron spectroscopy (XPS) spectra was investigated for both GeO2/Ge and SiO2/Si structures with thickness-controlled water films. This was achieved by obtaining XPS spectra at various values of relative humidity (RH) of up to ˜15%. The increase in the energy shift is more significant for thermal GeO2 on Ge than for thermal SiO2 on Si above ˜10-4% RH, which is due to the larger amount of water molecules that infiltrate into the GeO2 film to form hydroxyls. Analyzing the origins of this energy shift, we propose that the positive charging of a partially hydroxylated GeO2 film, which is unrelated to X-ray irradiation, causes the larger energy shift for GeO2/Ge than for SiO2/Si. A possible microscopic mechanism of this intrinsic positive charging is the emission of electrons from adsorbed water species in the suboxide layer of the GeO2 film to the Ge bulk, leaving immobile cations or positively charged states in the oxide. This may be related to the reported negative shift of flat band voltages in metal-oxide-semiconductor diodes with an air-exposed GeO2 layer.

  14. Electronic properties of epitaxial Ge/AlAs heterostructures on Si and GaAs

    NASA Astrophysics Data System (ADS)

    Heremans, J. J.; Xie, Yuantao; Hudait, M. K.; Clavel, M.; Goley, P. S.

    Ge, with high electron and hole mobilities, has advantages over Si for low-power high-speed nanoscale logic. We report on the MBE growth of Ge/AlAs/GaAs and Ge/AlAs/GaAs/Si structures, where the Ge/AlAs band offsets provide carrier confinement inside the Ge layer. We studied the confinement of carriers in the Ge layer, the effect of the AlAs buffer layer, and the effects of a growth pause and growth temperature, correlated to structural and morphological properties. Magnetotransport and quantum transport measurements were obtained down to 390 mK and in magnetic fields up to 9 T. A weak-localization signal, in contrast to antilocalization, indicates absence of spin-orbit interaction and hence electron confinement in the Ge rather than in the III-V layers. For the Ge/AlAs/GaAs/Si structure a low-temperature sheet carrier density 1.4 x 1014 cm-2 and mobility 390 cm2/Vs were obtained, with similar values at 290 K, while at 200 K a maximum in mobility is reached of 470 cm2/Vs. For the Ge/AlAs/GaAs structures a mobility up to 260 cm2/Vs was obtained at 2 x 1013 cm-2 at 290 K. The Ge/AlAs/GaAs structures have also shown phonon-limited scattering vs temperature, attesting to the quality of interfaces. Supported by DOE DE-FG02-08ER46532, NSF ECCS-1348653, Intel Corp.

  15. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations

    NASA Astrophysics Data System (ADS)

    Nakajima, Kazuo; Ujihara, Toru; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Shishido, Toetsu

    2004-01-01

    The strain, surface and interface energies of the SiGe/Si (SiGe grown on Si) heterostructure system with and without misfit dislocations were calculated for the Frank-van der Merwe (FM), Stranski-Krastanov (SK) and Volmer-Weber (VW) growth modes essentially based on the three kinds of fundamental and simple structures. The free energies for each growth mode were derived from these energies, and it was determined as a function of the composition and layer thickness of SiGe on Si. By comparison of the free energies, the phase diagrams of the FM, SK and VW growth modes for the SiGe/Si system were determined. The (1 1 1) and (1 0 0) reconstructed surfaces were selected for this calculation. From the phase diagrams, it was found for the growth of SiGe on Si that the layer-by-layer growth such as the FM mode was easy to be obtained when the Ge composition is small, and the island growth on a wetting layer such as the SK mode was easy to be obtained when the Ge composition is large. The VW mode is energetically stable in the Ge-rich compositional range, but it is difficult for the VW mode to appear in the actual growth of SiGe on Si because the VW region is right above the SK region. The regions of the SK and VW modes for the (1 1 1) heterostructure are larger than those for the (1 0 0) one because the strain energy of the (1 1 1) face is larger than that of the (1 0 0) face. The regions of the SK and VW modes for the heterostructure with misfit dislocations are narrower than those for the one without misfit dislocations because the strain energy is much released by misfit dislocations. The phase diagrams roughly explain the behavior of the FM and SK growth modes of SiGe on Si.

  16. Ba termination of Ge(001) studied with STM

    NASA Astrophysics Data System (ADS)

    Curson, Neil; Koczorowski, Wojciech; Grzela, Tomasz; Radny, Marian; Schofield, Steven; Capellini, Giovanni; Czajka, Ryszard; Schroeder, Thomas

    2015-03-01

    We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy (STM). Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (0.15 ML) such that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps up to 770 K with a gradual ordering of the Ba layer at 570 K and above and a decrease in Ba layer density. Annealing above 770 K produces the 2-D surface alloy phase accompanied by strain relief through monolayer height trench formation. At 1070 K the surface morphology changes again but remains a 2-D surface alloy. WK and NJC acknowledge EPSRC grant EP/I02865X/1. WK, MWR and R.C. acknowledge the Polish Ministry of Science and Higher Education for support (Project No. N-N202-195840).

  17. Strange particle production at low and intermediate energies

    SciTech Connect

    Alam, M. Rafi; Athar, M. Sajjad; Simo, I. Ruiz; Vacas, M. J. Vicente

    2011-11-23

    The weak kaon production off the nucleon induced by neutrinos and antineutrinos is studied at low and intermediate energies of interest for some ongoing and future neutrino oscillation experiments. We develop a microscopical model based on the SU(3) chiral Lagrangians. The studied mechanisms are the main source of kaon production for neutrino energies up to 2 GeV for the various channels and the cross sections are large enough to be amenable to be measured by experiments such as Minerva, T2K and NOvA.

  18. Ge-Au eutectic bonding of Ge {100} single crystals

    NASA Astrophysics Data System (ADS)

    Knowlton, W. B.; Itoh, K. M.; Beeman, J. W.; Emes, J. H.; Loretto, D.; Haller, E. E.

    1993-11-01

    We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of Au ranging from 900Å/surface to 300Å/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500Å/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300Å/surface Au sample show <100> epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal <110> heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200Å/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150Å across an interval of 1mm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons.

  19. Strain distributions and electronic property modifications in Si/Ge axial nanowire heterostructures

    SciTech Connect

    Swadener, John Gregory; Picraux, Samuel T

    2008-01-01

    Molecular dynamics simulations were carried out for Si/Ge axial nanowire heterostructures using modified effective atom method (MEAM) potentials. A Si-Ge MEAM interatomic cross potential was developed based on available experimental data and used for these studies. The atomic distortions and strain distributions near the Si/Ge interfaces are predicted for nanowires with their axes oriented along the [111] direction. The cases of 10 and 25 nm diameter SilGe biwires and of 25 nm diameter Si/Ge/Si axial heterostructures with the Ge disc 1 nm thick were studied. Substantial distortions in the height of the atoms adjacent to the interface were found for the biwires, but not for the Ge discs. Strains as high as 3.5% were found for the Ge disc and values of 2 to 2.5% were found at the Si and Ge interfacial layers in the biwires. Deformation potential theory was used to estimate the influence of the strains on the band gap, and reductions in band gap to as small as 40% of bulk values are predicted for the Ge discs. Localized regions of increased strain and resulting energy minima were also found within the Si/Ge biwire interfaces with the larger effects on the Ge side of the interface. The regions of strain maxima near and within the interfaces are anticipated to be useful for tailoring band gaps and producing quantum confinement of carriers. These results suggest nanowire heterostructures provide greater design flexibility in band structure modification than is possible with planar layer growth.

  20. On the doublet/triplet splitting and intermediate mass scales in locally supersymmetric SO(10)

    NASA Astrophysics Data System (ADS)

    Pulido, João

    1985-01-01

    In the light of the doublet/triplet splitting, the possibilities for an intermediate mass scale in locally supersymmetric SO(10) are analysed. It is found that the subgroup SU(4)c × SU(2)L × SU(2)R and more generally left-right symmetric models are unlikely to survive as intermediate symmetries since they imply too large values of the weak mixing angle. An alternative model using the subgroup SU(3)c × U(1)L × U(1)R is discussed. Requirements from global SUSY preservation impose an extra constraint and predictions for the grand unification and the intermediate masses are obtained at MX ~ 6 × 1015 GeV and MI ~ 1012 GeV. Address after March 1984: Centro de Fisica da Materia Condensada, Av. Prof. Gama Pinto, 2, 1699 Lisbon Codex, Portugal.

  1. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V.

    2013-11-15

    The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

  2. Model of cosmology and particle physics at an intermediate scale

    SciTech Connect

    Bastero-Gil, M.; Di Clemente, V.; King, S. F.

    2005-05-15

    We propose a model of cosmology and particle physics in which all relevant scales arise in a natural way from an intermediate string scale. We are led to assign the string scale to the intermediate scale M{sub *}{approx}10{sup 13} GeV by four independent pieces of physics: electroweak symmetry breaking; the {mu} parameter; the axion scale; and the neutrino mass scale. The model involves hybrid inflation with the waterfall field N being responsible for generating the {mu} term, the right-handed neutrino mass scale, and the Peccei-Quinn symmetry breaking scale. The large scale structure of the Universe is generated by the lightest right-handed sneutrino playing the role of a coupled curvaton. We show that the correct curvature perturbations may be successfully generated providing the lightest right-handed neutrino is weakly coupled in the seesaw mechanism, consistent with sequential dominance.

  3. Morphology and chemical composition of cobalt germanide islands on Ge(001)

    NASA Astrophysics Data System (ADS)

    Ewert, M.; Schmidt, Th; Flege, J. I.; Heidmann, I.; Grzela, T.; Klesse, W. M.; Foerster, M.; Aballe, L.; Schroeder, T.; Falta, J.

    2016-08-01

    The reactive growth of cobalt germanide on Ge(001) was investigated by means of in situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction (μ-LEED), and ex situ atomic force microscopy (AFM). At a Co deposition temperature of 670 °C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. By combining XAS-PEEM and μ-LEED, we were able to identify a large part of the islands to consist of CoGe2, with many of them having an unusual epitaxial relationship: CoGe2 [\\bar{1}10](111) \\parallel Ge [\\bar{1}10](001). Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co5Ge7 and CoGe. Comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates, the occurrence of these intermediate phases seems to be promoted by defects or residual strain.

  4. Moving beyond Intermediate English Proficiency

    ERIC Educational Resources Information Center

    Jewell, Mary

    2009-01-01

    Too many English learners get stuck at intermediate levels of English language proficiency. In this article, teacher Mary Jewell describes how she uses literature and scaffolds to ensure that students develop academic language.

  5. Uniaxially stressed Ge:Ga and Ge:Be

    SciTech Connect

    Dubon, O.D. Jr.

    1992-12-01

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  6. Synthesis of Group IV Nanowires on Graphene: The Case of Ge Nanocrawlers.

    PubMed

    Mataev, Elnatan; Rastogi, Sahil Kumar; Madhusudan, Atul; Bone, Jennifer; Lamprinakos, Nicholas; Picard, Yoosuf; Cohen-Karni, Tzahi

    2016-08-10

    In recent years, there has been a growing interest in using graphene as a synthesis platform for polymers, zero-dimensional (0D) materials, one-dimensional materials (1D), and two-dimensional (2D) materials. Here, we report the investigation of the growth of germanium nanowires (GeNWs) and germanium nanocrawlers (GeNCs) on single-layer graphene surfaces. GeNWs and GeNCs are synthesized on graphene films by gold nanoparticles catalyzed vapor-liquid-solid growth mechanism. The addition of hydrogen chloride gas (HCl) at the nucleation step increased the propensity toward GeNCs growth on the surface. As the time lag before HCl introduction during the nucleation step increased, a significant change in the number of out-of-plane GeNWs versus in-plane GeNCs was observed. The nucleation temperature and time played a key role in the formation of GeNCs as well. The fraction of GeNCs (χNCs) decreased from 0.95 ± 0.01 to 0.66 ± 0.07 when the temperature was kept at 305 °C for 15 s versus maintained at 305 °C throughout the process, respectively. GeNCs exhibit ⟨112⟩ as the preferred growth direction whereas GeNWs exhibit both ⟨112⟩ and ⟨111⟩ as the preferred growth directions. Finally, our growth model suggests a possible mechanism for the preference of an in-plane GeNC growth on graphene versus GeNW on SiO2. These findings open up unique opportunities for fundamental studies of crystal growth on graphene, as well as enable exploration of new electronic interfaces between group IV materials and graphene, potentially toward designing new geometries for hybrid materials sensors. PMID:27400248

  7. Short, intermediate and mesoscopic range order in sulfur-rich binary glasses

    SciTech Connect

    Bychkov, E.; Miloshova, M.; Price, D.L.; Benmore, C.J.; Lorriaux, A.

    2008-09-29

    Pulsed neutron and high-energy X-ray diffraction, small-angle neutron scattering, Raman spectroscopy and DSC were used to study structural changes on the short, intermediate and mesoscopic range scale for sulfur-rich AsS{sub x} (x {ge} 1.5) and GeS{sub x} (x {ge} 2) glasses. Two structural regions were found in the both systems. (1) Between stoichiometric (As{sub 2}S{sub 3} and GeS{sub 2}) and 'saturated' (AsS{sub 2.2} and GeS{sub 2.7}) compositions, excessive sulfur atoms form sulfur dimers and/or short chains, replacing bridging sulfur in corner-sharing AsS{sub 3/2} and GeS{sub 4/2} units. (2) Above the 'saturated' compositions at [As] < 30.5 at.% and [Ge] < 27 at.%, sulfur rings and longer sulfur chains (especially in the AsS{sub x} system) appear in the glass network. The glasses become phase separated with the domains of 20-50 {angstrom}, presumably enriched with sulfur rings. The longer chains Sn are not stable and crystallize to c-S{sub 8} on ageing of a few days to several months, depending on composition.

  8. Optical properties of individual site-controlled Ge quantum dots

    SciTech Connect

    Grydlik, Martyna E-mail: martyna.grydlik@jku.at; Brehm, Moritz E-mail: martyna.grydlik@jku.at; Tayagaki, Takeshi; Langer, Gregor; Schäffler, Friedrich; Schmidt, Oliver G.

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  9. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation.

    PubMed

    Teodorescu, Valentin Serban; Ghica, Cornel; Maraloiu, Adrian Valentin; Vlaicu, Mihai; Kuncser, Andrei; Ciurea, Magdalena Lidia; Stavarache, Ionel; Lepadatu, Ana M; Scarisoreanu, Nicu Doinel; Andrei, Andreea; Ion, Valentin; Dinescu, Maria

    2015-01-01

    Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms

  10. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation.

    PubMed

    Teodorescu, Valentin Serban; Ghica, Cornel; Maraloiu, Adrian Valentin; Vlaicu, Mihai; Kuncser, Andrei; Ciurea, Magdalena Lidia; Stavarache, Ionel; Lepadatu, Ana M; Scarisoreanu, Nicu Doinel; Andrei, Andreea; Ion, Valentin; Dinescu, Maria

    2015-01-01

    Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms

  11. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  12. Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates

    SciTech Connect

    Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki; Sugahara, Satoshi

    2011-10-01

    We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

  13. Existence of tetrahedral site symmetry about Ge atoms in a single-crystal film of Ge2Sb2Te5 found by x-ray fluorescence holography

    NASA Astrophysics Data System (ADS)

    Hosokawa, S.; Ozaki, T.; Hayashi, K.; Happo, N.; Fujiwara, M.; Horii, K.; Fons, P.; Kolobov, A. V.; Tominaga, J.

    2007-03-01

    The authors discuss x-ray fluorescence holography (XFH) measurements taken from an epitaxial layer of the digital versatile disk random access memory (DVD-RAM) material Ge2Sb2Te5 grown on a single-crystal GaSb(100) substrate. By using fluorescent photons from the Ge atoms in the matrix, a three-dimensional atomic image was obtained around the Ge atoms in a Ge2Sb2Te5 film; details of the three-dimensional atomic arrangement will aim at clarification of the high-speed writing and erasing mechanism of the laser-induced crystal-amorphous phase transition in this DVD-RAM material. Analysis of the XFH images revealed that the epitaxial layer did not possess a hexagonal structure as in the equilibrium phase of Ge2Sb2Te5, but a cubic structure with tetrahedral site symmetry about Ge atoms, different from the previous powder diffraction result. The present structure may support the umbrella-flip model of the Ge atoms between the octahedral site in the distorted rocksalt crystal and the tetrahedral site in the amorphous phase on the laser-induced phase transition.

  14. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect

    Yablonskiy, A. N. Baidakova, N. A.; Novikov, A. V.; Lobanov, D. N.

    2013-11-15

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  15. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

    NASA Astrophysics Data System (ADS)

    Grydlik, Martyna; Langer, Gregor; Fromherz, Thomas; Schäffler, Friedrich; Brehm, Moritz

    2013-03-01

    We identify the most important parameters for the growth of ordered SiGe islands on pit-patterned Si(001) substrates. From a multi-dimensional parameter space we link individual contributions to isolate their influence on ordered island growth. This includes the influences of: the pit size, pit depth and pit period on the Si buffer layer and subsequent Ge growth; the pit sidewall inclination on Ge island growth; the amount of Ge on island morphologies as well as the influences of the pit-size homogeneity, the pit period, the Ge growth temperature and rate on island formation. We highlight that the initial pit shape and pit size in combination with the growth conditions of the Si buffer layer should be adjusted to provide suitable preconditions for the growth of Ge islands with the desired size, composition and nucleation position. Furthermore, we demonstrate that the wetting layer between pits can play the role of a stabilizer that inhibits shape transformations of ordered islands. Thus, dislocation formation within islands can be delayed, uniform arrays of one island type can be fabricated and secondary island nucleation between pits can be impeded. These findings allow us to fabricate perfectly ordered and homogeneous Ge islands on one and the same sample, even if the pit period is varied from a few hundred nanometres to several micrometres.

  16. Intermediate ions in the atmosphere

    NASA Astrophysics Data System (ADS)

    Tammet, Hannes; Komsaare, Kaupo; Hõrrak, Urmas

    2014-01-01

    Intermediate air ions are charged nanometer-sized aerosol particles with an electric mobility of about 0.03-0.5 cm2 V- 1 s- 1 and a diameter of about 1.5-7.5 nm. Intensive studies of new particle formation provided good knowledge about intermediate ions during burst events of atmospheric aerosol nucleation. Information about intermediate ions during quiet periods between the bursts remained poor. The new mobility analyzer SIGMA can detect air ions at concentrations of mobility fractions of about 1 cm- 3 and enables studying intermediate ions during quiet periods. It became evident that intermediate ions always exist in atmospheric air and should be considered an indicator and a mediator of aerosol nucleation. The annual average concentration of intermediate ions of one polarity in Tartu, Estonia, was about 40 cm- 3 while 5% of the measurements showed a concentration of less than 10 cm- 3. The fraction concentrations in logarithmic 1/8-decade mobility bins between 0.1 and 0.4 cm2 V- 1 s- 1 often dropped below 1 cm- 3. The bursts of intermediate ions at stations separated by around 100 km appeared to be correlated. The lifespan of intermediate ions in the atmosphere is a few minutes, and they cannot be carried by wind over long distances. Thus the observed long-range correlation of intermediate ions is explained by simultaneous changes in air composition in widely spaced stations. A certain amount of intermediate ion bursts, predominantly of negative polarity, are produced by the balloelectric effect at the splashing of water drops during rain. These bursts are usually excluded when speaking about new particle formation because the balloelectric particles are assumed not to grow to the size of the Aitken mode. The mobility distribution of balloelectric ions is uniform in shape in all measurements. The maximum is located at a mobility of about 0.2 cm2 V- 1 s- 1, which corresponds to the diameter of particles of about 2.5 nm.

  17. Influence of layer charge and charge distribution of smectites on the flow behaviour and swelling of bentonites

    USGS Publications Warehouse

    Christidis, G.E.; Blum, A.E.; Eberl, D.D.

    2006-01-01

    The influence of layer charge and charge distribution of dioctahedral smectites on the rheological and swelling properties of bentonites is examined. Layer charge and charge distribution were determined by XRD using the LayerCharge program [Christidis, G.E., Eberl, D.D., 2003. Determination of layer charge characteristics of smectites. Clays Clay Miner. 51, 644-655.]. The rheological properties were determined, after sodium exchange using the optimum amount of Na2CO3, from free swelling tests. Rheological properties were determined using 6.42% suspensions according to industrial practice. In smectites with layer charges of - 0.425 to - 0.470 per half formula unit (phfu), layer charge is inversely correlated with free swelling, viscosity, gel strength, yield strength and thixotropic behaviour. In these smectites, the rheological properties are directly associated with the proportion of low charge layers. By contrast, in low charge and high charge smectites there is no systematic relation between layer charge or the proportion of low charge layers and rheological properties. However, low charge smectites yield more viscous suspensions and swell more than high charge smectites. The rheological properties of bentonites also are affected by the proportion of tetrahedral charge (i.e. beidellitic charge), by the existence of fine-grained minerals having clay size, such as opal-CT and to a lesser degree by the ionic strength and the pH of the suspension. A new method for classification of smectites according to the layer charge based on the XRD characteristics of smecites is proposed, that also is consistent with variations in rheological properties. In this classification scheme the term smectites with intermediate layer charge is proposed. ?? 2006 Elsevier B.V. All rights reserved.

  18. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  19. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    PubMed

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure. PMID:27302495

  20. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Z.; Wang, R. F.; Zhang, J.; Li, H. S.; Zhang, J.; Qiu, F.; Yang, J.; Wang, C.; Yang, Y.

    2016-07-01

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  1. GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

    NASA Astrophysics Data System (ADS)

    Taboada, A. G.; MeduÅa, M.; Salvalaglio, M.; Isa, F.; Kreiliger, T.; Falub, C. V.; Barthazy Meier, E.; Müller, E.; Miglio, L.; Isella, G.; von Känel, H.

    2016-02-01

    Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

  2. ABA-alcohol is an intermediate in abscisic acid biosynthesis

    SciTech Connect

    Rock, C.D.; Zeevaart, J.A.D. )

    1990-05-01

    It has been established that ABA-aldehyde is a precursor to ABA. The ABA-deficient flacca and sitiens mutants of tomato are blocked in the conversion of ABA-aldehyde to ABA, and accumulate trans-ABA-alcohol. {sup 18}O-Labeling studies of ABA in flacca and sitiens show that these mutants synthesize a large percentage of ({sup 18}O)ABA which contains two {sup 18}O atoms in the carboxyl group. Furthermore, the mutants synthesize much greater amounts of trans-ABA-glucose ester (t-ABA-GE) compared with the wild type, and this ({sup 18}O)t-ABA-GE is also double labeled in the carboxyl group. Our interpretation of these data is that the {sup 18}O in ABA-aldehyde is trapped in the side chain by reduction to ({sup 18}O)ABA-alcohol, followed by isomerization to ({sup 18}O)t-ABA-alcohol and oxidation with {sup 18}O{sub 2} to ({sup 18}O)t-ABA. The ({sup 18}O)t-ABA is then rapidly converted to ({sup 18}O)t-ABA-GE. Because ({sup 18}O)ABA doubly labeled in the carboxyl group has been observed in small amounts in labeling experiments with several species, and various species have been shown to convert ABA-aldehyde to ABA-alcohol and t-ABA-alcohol, we propose that ABA-alcohol is an ABA intermediate in a shunt pathway.

  3. Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks

    NASA Astrophysics Data System (ADS)

    Kanashima, T.; Nohira, H.; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K.

    2015-12-01

    We demonstrate a high-quality La2O3 layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La2O3(001) and Ge(111). Structural analyses reveal that (001)-oriented La2O3 layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La2O3 layer is roughly estimated to be ˜19 from capacitance-voltage (C-V) analyses in Au/La2O3/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge-O-La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO2 monolayer. We discuss a model of the interfacial structure between La2O3 and Ge(111) and comment on the C-V characteristics.

  4. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

    PubMed

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-01-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  5. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    PubMed Central

    2013-01-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

  6. Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

    NASA Astrophysics Data System (ADS)

    Medvid, Artur; Onufrijevs, Pavels; Jarimaviciute-Gudaitiene, Renata; Dauksta, Edvins; Prosycevas, Igoris

    2013-06-01

    In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms' redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

  7. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

    SciTech Connect

    Oliveira, F.; Fischer, I. A.; Schulze, J.; Benedetti, A.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.

    2015-03-28

    We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge{sub 0.96}Sn{sub 0.04} self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

  8. Structural modifications of GeO2 glass under high pressure and high temperature

    NASA Astrophysics Data System (ADS)

    Cornet, Antoine; Molherac, Rémy; Champagnon, Bernard; Martinet, Christine

    2016-09-01

    Vitreous GeO2 has been compressed at high temperature to investigate the effect of thermal activation on the structural reorganization during compression. The measurements were performed in-situ using micro Raman spectroscopy under pressure up to 6 GPa and temperature up to 400 °C. The evolution of the Raman shift of the main band (400-500 cm-1) with temperature during compression evidences a pressure window around 3 GPa within which temperature has a remarkable influence on the structure, in particular, the intermediate range order. We find that this change is well correlated with previous ex-situ density measurements from high pressure-high temperature densifications. Moreover, coordination changes from tetrahedrally (GeO4) to octahedrally (GeO6) coordinated GeO2 are accelerated with the heating during the compression.

  9. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  10. Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy

    SciTech Connect

    Wang Shengkai; Liu Honggang; Toriumi, Akira

    2012-08-06

    GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

  11. Nuclear reactions at intermediate energies

    NASA Astrophysics Data System (ADS)

    Shyam, Radhey

    2016-05-01

    In the domain of Nuclear reactions at intermediate energies, the QCD coupling constant αs is large enough (~ 0.3 - 0.5) to render the perturbative calculational techniques inapplicable. In this regime the quarks are confined into colorless hadrons and it is expected that effective field theories of hadron interactions via exchange of hadrons, provide useful tools to describe such reactions. In this contribution we discuss the application of one such theory, the effective Lagrangian model, in describing the hadronic reactions at intermediate energies whose measurements are the focus of a vast international experimental program.

  12. Compact intermediates in RNA folding

    SciTech Connect

    Woodson, S.A.

    2011-12-14

    Large noncoding RNAs fold into their biologically functional structures via compact yet disordered intermediates, which couple the stable secondary structure of the RNA with the emerging tertiary fold. The specificity of the collapse transition, which coincides with the assembly of helical domains, depends on RNA sequence and counterions. It determines the specificity of the folding pathways and the magnitude of the free energy barriers to the ensuing search for the native conformation. By coupling helix assembly with nascent tertiary interactions, compact folding intermediates in RNA also play a crucial role in ligand binding and RNA-protein recognition.

  13. Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe

    SciTech Connect

    Edwardson, C. J.; Coleman, P. G.; El Mubarek, H. A. W.; Gandy, A. S.

    2012-04-01

    The formation of fluorine-vacancy (FV) complexes in strained Si-SiGe-Si multilayer structures and relaxed SiGe layers of varying Ge content has been investigated using variable-energy positron annihilation spectroscopy, including Doppler-broadened spectra ratio curves. It has been found that in all sample types there are two distinct regions defined only by the damage created by the implanted F ions. The first, shallower region (from the surface to a depth of {approx}200 nm) was found to contain a mixture of undecorated vacancies and FV complexes; there is no correlation between the vacancy or F concentration in this region and the Ge content. The multi-layer samples may also have O contamination that is not present in the relaxed samples. The second region (at depths {approx}200-440 nm) contains primarily FV complexes in all samples. In the multi-layer samples secondary ion mass spectrometry (SIMS) results show peaks of F accumulating in, or at the interfaces of, each SiGe multi-layer; the FV complexes, however, are distributed over depths similar to those in the relaxed samples, with some localization at the SiGe layer located within the second region. The positron response is primarily to FV complexes formed by the F implant in all samples. The F: FV ratios are approximately 3-7: 1 in the relaxed samples. Positrons appear to be relatively insensitive to the largest of the F SIMS peaks which lies beyond the second region. This is probably because the F has filled all the open volume at the SiGe layer, leaving no positron trapping sites.

  14. Superconducting Nb3Ge for high-field magnets

    NASA Technical Reports Server (NTRS)

    Braginski, A. I.; Daniel, M. R.; Roland, C. W.; Woollam, J. A.

    1978-01-01

    Superconducting Nb3Ge tape conductors 5 to 10 m long were fabricated by chemical vapor deposition. Such tapes could be used in high-field magnet applications. Average tape properties set the upper performance limit of a magnet at 17 teslas (4.2 K). Highest critical-current densities obtained in thin and layered films set the upper performance limit at 20 teslas (4.2 K).

  15. Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

    SciTech Connect

    Nakata, M.; Toko, K. Suemasu, T.; Jevasuwan, W.; Fukata, N.; Saitoh, N.; Yoshizawa, N.

    2015-09-28

    Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

  16. Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

    SciTech Connect

    Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G.; Bosco, L.

    2012-06-01

    The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

  17. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

    NASA Astrophysics Data System (ADS)

    Katiyar, Ajit K.; Grimm, Andreas; Bar, R.; Schmidt, Jan; Wietler, Tobias; Joerg Osten, H.; Ray, Samit K.

    2016-10-01

    Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

  18. Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

    1995-01-01

    The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

  19. Insight into unusual impurity absorbability of GeO(2) in GeO(2)∕Ge stacks.

    PubMed

    Ogawa, Shingo; Suda, Taichi; Yamamoto, Takashi; Kutsuki, Katsuhiro; Hideshima, Iori; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2011-10-01

    Adsorbed species and its diffusion behaviors in GeO(2)∕Ge stacks, which are future alternative metal-oxide-semiconductor (MOS) materials, have been investigated using various physical analyses. We clarified that GeO(2) rapidly absorbs moisture in air just after its exposure. After the absorbed moisture in GeO(2) reaches a certain limit, the GeO(2) starts to absorb some organic molecules, which is accompanied by a structural change in GeO(2) to form a partial carbonate or hydroxide. We also found that the hydrogen distribution in GeO(2) shows intrinsic characteristics, indicative of different diffusion behaviors at the surface and at the GeO(2)∕Ge interface. Because the impurity absorbability of GeO(2) has a great influence on the electrical properties in Ge-MOS devices, these results provide valuable information in realizing high quality GeO(2)∕Ge stacks for the actual use of Ge-MOS technologies.

  20. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

    PubMed Central

    2012-01-01

    Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their ‘condensation’ fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p–i–n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount

  1. Diytterbium(II) lithium indium(III) digermanide, Yb2LiInGe2

    PubMed Central

    You, Tae-Soo; Bobev, Svilen

    2010-01-01

    The title compound, Yb2LiInGe2, a new ordered quaternary inter­metallic phase, crystallizes with the ortho­rhom­bic Ca2LiInGe2 type (Pearson code oP24). The crystal structure contains six crystallographically unique sites in the asymmetric unit, all in special positions with site symmetry .m.. The structure is complex and based on [InGe4] tetra­hedra, which share corners in two directions, forming layers parallel to (001). Yb atoms fill square-pyramidal (Yb1) and octa­hedral (Yb2) inter­stices between the [InGe4/2] layers, while the small Li+ atoms fill tetra­hedral sites. PMID:21578989

  2. Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

    SciTech Connect

    Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Khamari, S. K.; Kumar, R.; Tiwari, Pragya; Sharma, T. K.; Oak, S. M.; Phase, D. M.

    2014-03-03

    Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

  3. Numerical simulation of impact ionization in Ge/AlxGa1-xAs avalanche photodiode

    NASA Astrophysics Data System (ADS)

    Chia, C. K.

    2010-08-01

    Impact ionization in Ge/AlxGa1-xAs p-i-n heterostructures has been studied using the Monte Carlo technique. The thin (<300 nm) Ge/AlxGa1-xAs single heterojunction structure was found to exhibit large hole (β) to electron (α) ionization coefficient ratio, owing to a higher β in the Ge layer and a lower α in the AlxGa1-xAs layer, together with the dead space effects. The Ge/AlxGa1-xAs avalanche photodiodes are attractive for applications where a wide wavelength detection range is required for compatibility with multiple sources such as in the emerging active optical cable and optical interconnect applications, as well as in the established optical fiber telecommunication systems.

  4. Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

    SciTech Connect

    Kamiyama, Eiji; Sueoka, Koji; Vanhellemont, Jan

    2014-02-21

    The Ge (001) surface with dimer structure, is negatively charged while into the bulk, positive charges are observed even deeper than the fifteenth layer from the surface. This is different from the Si case. This charge distribution can lead to the repulsion of positively charged self-interstitials by the positively charged near surface layer in an implantation or irradiation process. Self-interstitial reflection by Ge surfaces had been proposed to explain the results of diffusion experiments during irradiation whereby positively charged self-interstitials are generated by collisions of highly energetic particles with Ge atoms. We investigated different Ge (001) surface comparing an as-cleaved surface with dangling bonds to a surface with dimer structure, and to a surface terminated by hydrogen atoms. The effect of these different surface terminations on the surface-induced charges in the near surface bulk were calculated by ab initio techniques.

  5. Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure - Chemical Vapour Deposition tool

    NASA Astrophysics Data System (ADS)

    Aubin, J.; Hartmann, J. M.; Bauer, M.; Moffatt, S.

    2016-07-01

    We have studied the very low temperature epitaxy of pure Ge and of Ge-rich SiGe alloys in a 200 mm industrial reduced pressure chemical vapour deposition tool. We have, first of all, benchmarked germane (GeH4) and digermane (Ge2H6) for the growth of pure Ge. Used Ge2H6 instead of GeH4 enabled us to dramatically increase the Ge growth rate at temperatures 425 °C and lower (5.6 nm min-1 compared to 0.14 nm min-1 at 350 °C with a Ge2H6 mass-flow one fourth that of GeH4). We have also evaluated at 400 °C, 100 Torr, the impact of the GeH4 or Ge2H6 mass-flow on the Ge growth rate. For a given Ge atomic flow, the higher surface reactivity of digermane yielded roughly five times higher growth rates than with germane. We have then combined digermane with disilane (Si2H6) or dichlorosilane (SiH2Cl2) in order to study the GeSi growth kinetics at 475 °C, 100 Torr. While the SiH2Cl2 mass-flow did not have any clear influence on the GeSi growth rate (with a 14 nm min-1 mean value, then), a Si2H6 mass-flow increase resulted in a slight GeSi growth rate increase (from 11 nm min-1 up to 14 nm min-1). Significantly higher Ge concentrations were otherwise accessed with dichlorosilane than with disilane, in the 77-82% range compared to the 39-53% range, respectively.

  6. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGES

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  7. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    NASA Astrophysics Data System (ADS)

    Laroche, D.; Huang, S.-H.; Chuang, Y.; Li, J.-Y.; Liu, C. W.; Lu, T. M.

    2016-06-01

    We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows hole densities as low as p ˜ 1.1 × 1010 cm-2 to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is found to be α ˜ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ˜ 1.0 × 1011 cm-2, the effective mass m* is ˜0.105 m0, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  8. Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

    PubMed

    Morris, Richard J H; Dowsett, Mark G; Beanland, Richard; Dobbie, Andrew; Myronov, Maksym; Leadley, David R

    2012-03-01

    We specify the O(2)(+) probe conditions and subsequent data analysis required to obtain high depth resolution secondary ion mass spectrometry profiles from multiple Ge/Si(1-x)Ge(x) quantum well structures (0.6 ≤ x ≤ 1). Using an O(2)(+) beam at normal incidence and with energies >500 eV, we show that the measured Ge signal is not monotonic with concentration, the net result being an unrepresentative and unquantifiable depth profile. This behavior is attributed to a reduced Ge ionization rate as x approaches 1. At lower beam energies the signal behaves monotonically with Ge fraction, indicating that the Ge atoms are now ionizing more readily for the whole range of x, enabling quantitative profiles to be obtained. To establish the depth scale a point-by-point approach based on previously determined erosion rates as a function of x is shown to produce quantum well thicknesses in excellent agreement with those obtained using transmission electron microscopy. The findings presented here demonstrate that to obtain reliable quantitative depth profiles from Ge containing samples requires O(2)(+) ions below 500 eV and correct account to be taken of the erosion rate variation that exists between layers of different matrix composition.

  9. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

    PubMed Central

    2013-01-01

    We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage. PMID:23651470

  10. Enhanced performance of Si opto-devices by SiGe nanostructures

    NASA Astrophysics Data System (ADS)

    Presting, Hartmut; Konle, Johannes; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf

    2001-05-01

    Ultrathin silicon/germanium (SiGe) quantum well (QW) and short-period SimGen superlattice structures have been grown by molecular beam epitaxy (MBE) on <100$GTR Si substrates. Si/SiGe detectors in the near infrared (IR; 1.3(mu) ) for optical communication and mid-infrared (3(mu) -5(mu) ; 8(mu) -12(mu) ) regime for heat sensing applications have been fabricated and characterized. The SiGe detectors for the mid IR are based on hetero-internal photoemission (HIP) from a highly p-doped SiGe quantum well into an undoped Si layer. These SiGe HIP-heterostructures allow the possibility to tailor the photoresponse and cut-off wavelength for IR-detectors by changing the Ge-content and QW width of the active layers. External quantum efficiencies up to 0.6% at 77K have been achieved from HIP-detectors and detectivities in excess of 8x1011cmHz0.5/W at 77 Kelvin have been obtained for Si/SiGe multiple quantum well (MQW) detectors. We have also studied nano-scaled, three dimensional Ge islands grown by self-organized Stranski-Krastanov growth. The Ge-islands are deposited in the base of a Si solar cell to increase the quantum efficiency and are investigated by atomic force microscopy (AFM), photoluminescence and photocurrent measurements. They have been grown with varying conditions and exhibit three dimensional growth in a small temperature regime between 500 degree(s)C and 700 degree(s)C for Ge-thicknesses above 4ML.

  11. Influence of Ge nanocrystals and radiation defects on C- V characteristics in Si-MOS structures

    NASA Astrophysics Data System (ADS)

    Levy, Shai; Shlimak, Issai; Chelly, Avraham; Zalevsky, Zeev; Lu, Tiecheng

    2009-12-01

    Metal-oxide-semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO 2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge + ions with energy of 150 keV into relatively thick (∼640 nm) amorphous SiO 2 films. The experimental characterization included room temperature measurements of capacitance-voltage ( C- V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st-“Initial” samples, without Ge atoms (before ion implantation). The 2nd-“implanted” samples, after Ge + ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd-samples after formation of Ge nanocrystals by means of annealing at 800 °C (“NC-Ge” samples), and the 4th-“final” samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10 20 neutrons/cm 2 followed by the annealing of radiation damage. It is shown that in “initial” samples, the C- V characteristics have a step-like form or “S-shape”, which is typical for MOS structures in the case of high frequency. However, in “implanted” and “NC-Ge” samples, C- V characteristics have “U-shape” despite the high frequency operation. In addition, “NC-Ge” samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the “U-shape” and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. “Final” samples indicate destruction of the observed peculiarities of C- V characteristics and recurrence to the C- V curve of “initial” samples.

  12. Photoluminescence and Cathodoluminescence Characterization of Ge/GeO2 Nanostructure Synthesized by Thermal Evaporation of Ge Powder

    NASA Astrophysics Data System (ADS)

    Pham, V. H.; Trung, D. Q.; Kien, N. D. T.; Tam, P. D.; Huy, P. T.

    2016-09-01

    This paper reports the first attempt to characterize the light-emission from Ge/GeO2 nanostructure synthesized by thermal evaporation. The synthesized Ge/GeO2 was observed to have a nanowire structure. Photoluminescence (PL) results show that the emission center of the PL peak at about 410 and 485 nm depends on the excitation wavelength. Experimental XRD, EDS and spectral analyses suggest that the 410 nm emission can be attributed to the Ge core; however, 485 nm is attributed to the GeO2 sheath.

  13. Cestina pro Pokrocile (Intermediate Czech).

    ERIC Educational Resources Information Center

    Kabat, Grazyna; And Others

    The textbook in intermediate Czech is designed for second-year students of the language and those who already have a basic knowledge of Czech grammar and vocabulary. It is appropriate for use in a traditional college language classroom, the business community, or a government language school. It can be covered in a year-long conventional…

  14. Material Voices: Intermediality and Autism

    ERIC Educational Resources Information Center

    Trimingham, Melissa; Shaughnessy, Nicola

    2016-01-01

    Autism continues to be regarded enigmatically; a community that is difficult to access due to perceived disruptions of interpersonal connectedness. Through detailed observations of two children participating in the Arts and Humanities Research Council funded project "Imagining Autism: Drama, Performance and Intermediality as Interventions for…

  15. Intermediate Filaments: A Historical Perspective

    PubMed Central

    Oshima, Robert G.

    2007-01-01

    Intracellular protein filaments intermediate in size between actin microfilaments and microtubules are composed of a surprising variety of tissue specific proteins commonly interconnected with other filamentous systems for mechanical stability and decorated by a variety of proteins that provide specialized functions. The sequence conservation of the coiled-coil, alpha-helical structure responsible for polymerization into individual 10 nm filaments defines the classification of intermediate filament proteins into a large gene family. Individual filaments further assemble into bundles and branched cytoskeletons visible in the light microscope. However, it is the diversity of the variable terminal domains that likely contributes most to different functions. The search for the functions of intermediate filament proteins has led to discoveries of roles in diseases of the skin, heart, muscle, liver, brain, adipose tissues and even premature aging. The diversity of uses of intermediate filaments as structural elements and scaffolds for organizing the distribution of decorating molecules contrasts with other cytoskeletal elements. This review is an attempt to provide some recollection of how such a diverse field emerged and changed over about 30 years. PMID:17493611

  16. Intermediality and the Child Performer

    ERIC Educational Resources Information Center

    Budd, Natasha

    2016-01-01

    This report details examples of praxis in the creation and presentation of "Joy Fear and Poetry": an intermedial theatre performance in which children aged 7-12 years generated aesthetic gestures using a range of new media forms. The impetus for the work's development was a desire to make an intervention into habituated patterns of…

  17. Authentic Video in Intermediate German.

    ERIC Educational Resources Information Center

    Lutcavage, Charles

    1992-01-01

    Assorted techniques are offered for introducing authentic German video into the intermediate language curriculum. Television commercials, weather forecasts, and news programs are described as tools for enhancing listening comprehension and expanding students' cultural awareness. Various preparatory activities and follow-up assignments are…

  18. Learning through Literature: Geography, Intermediate.

    ERIC Educational Resources Information Center

    Sterling, Mary Ellen

    This resource book provides specific strategies and activities for integrating the intermediate geography curriculum with related children's literature selections. The book includes the following sections: (1) "World Geography Overview"; (2) "Oceans"; (3) "Polar Regions"; (4) "Islands"; (5) "Rain Forests"; (6) "Mountains"; (7) "Forests"; (8)…

  19. On the Nb-Ge Binary System

    NASA Astrophysics Data System (ADS)

    Papadimitriou, Ioannis; Utton, Claire; Tsakiropoulos, Panos

    2015-12-01

    First-principles calculations were used to study intermetallic compounds in the Nb-Ge system, to gain a better understanding of the phase diagram and resolve conflicts reported in the literature. The enthalpy of formation with regard to temperature was calculated for all the intermetallic compounds, to investigate phase stabilities and phase equilibria at low and elevated temperatures. These results, combined with the electronic DOS, suggest that the tI32 (W5Si3-type) Nb5Ge3 and NbGe2 compounds are stable over the whole temperature range. The stoichiometric cP8 Nb3Ge becomes stable close to its melting temperature. Regarding different compositions of the cP8 Nb3Ge, the calculations suggest the (Nb)0.75(Nb,Ge)0.25 model for the Nb3Ge phase instead of the proposed model, (Nb)0.75(Nb,Ge,Va)0.25, where Va represents vacancy. The calculations show that the tI32 (Cr5B3-type) Nb5Ge3, hP16 (Mn5Si3-type) Nb5Ge3 and Nb10Ge7 compounds should be considered metastable. The elastic constants, bulk, shear, and Young's modulus, Poisson's ratio, and Debye temperature of the Nb, Ge, cP8 Nb3Ge, tP32 Nb3Ge, tI32 (Cr5B3-type) Nb5Ge3, tI32 (W5Si3-type) Nb5Ge3, hP16 (Mn5Si3-type) Nb5Ge3, Nb10Ge7 and NbGe2 were calculated. These phases were found to be mechanically stable. Using the Cauchy pressure, Pugh's index of ductility, and the Poisson's ratio as criteria, the calculations suggest that the tI32 (Cr5B3-type) Nb5Ge3 and NbGe2 intermetallics should be brittle (with the latter being the most brittle) and the cP8 Nb3Ge, tP32 Nb3Ge, hP16 Nb5Si3 and Nb10Ge7 ductile (with cP8 Nb3Ge being the most ductile).

  20. Stellar laboratories: new Ge V and Ge VI oscillator strengths and their validation in the hot white dwarf RE 0503-289

    NASA Astrophysics Data System (ADS)

    Rauch, T.; Werner, K.; Biémont, É.; Quinet, P.; Kruk, J. W.

    2012-10-01

    Context. State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims: In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods: We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge iv-vi spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results: In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, Ge V, and Ge VI lines in the observed spectrum of RE 0503-289 (Teff = 70 kK, log g = 7.5) at log Ge = -3.8 ± 0.3 (mass fraction, about 650 times solar). The Ge iv/v/vi ionization equilibrium, that is a very sensitive Teff indicator, is reproduced well. Conclusions: Reliable measurements and calculations of atomic data are a

  1. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jin, Y. J.; Chia, C. K.; Liu, H. F.; Wong, L. M.; Chai, J. W.; Chi, D. Z.; Wang, S. J.

    2016-07-01

    In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  2. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands

    SciTech Connect

    Mashin, A. I.; Nezhdanov, A. V.; Filatov, D. O. Isakov, M. A.; Shengurov, V. G.; Chalkov, V. Yu.; Denisov, S. A.

    2010-11-15

    The method of confocal Raman microscopy is used for the first time to study the spatial distribution of elemental composition and elastic strains in self-assembled GexSi{sub 1-x}/Si(001) islands grown by the method of sublimation molecular-beam epitaxy in the GeH{sub 4} ambient. The lines related to vibrational modes Si-Si, Ge-Ge, and Si-Ge are identified in the Raman spectra measured in the regions with dimensions <100 nm on the surface of the samples. The spatial distribution of the Ge atomic fraction x in the Ge{sub x}Si{sub 1-x} alloy and of the elastic strain {epsilon} (averaged in depth over the island layer) have been calculated from the maps of the Raman shifts of the corresponding lines over the sample surface. The dependences of x and {epsilon} on the islands' growth temperature and on the nominal thickness of the deposited Ge layer have been studied.

  3. Au-induced deep groove nanowire structure on the Ge(001) surface: DFT calculations

    NASA Astrophysics Data System (ADS)

    Tsay, Shiow-Fon

    2016-09-01

    The atomic geometry, stability, and electronic properties of self-organized Au induced nanowires on the Ge(001) surface are investigated based on the density-functional theory in GGA and the stoichiometry of Au. A giant Ge zigzag chain structure is suggested for 0.75 ML Au coverage, which displays c(8 × 2) deep groove zigzag nanowire structure simulated STM images. The top layer Ge and Au atomic disorder introduces the chevron units into the zigzag nanowire structure STM image as per the experimental observations. The zigzag Ge nanowire exhibits a semi-metallic characteristic, and the electric transport occurs in between the Ge zigzag nanowire and the subsurface. The system exhibits obvious electronic correlations among the Ge nanowire, the nano-facet Au trimers and the deeper layer Ge atoms, that play an important role in the electronic structure. At surface Brillouin zone boundaries, an anisotropic two-dimensional upward parabolic surface-state band is consistent with the ARPES spectra reported by Nakatsuji et al. [Phys. Rev. B 80, 081406(R) (2009); Phys. Rev. B 84, 115411 (2011)]; this electronic structure is different from the quasi-one-dimensional energy trough reported by Schäfer et al. [Phys. Rev. Lett. 101, 236802 (2008); Phys. Rev. B 83, 121411(R) (2011)].

  4. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  5. Three step double layers in the laboratory. [plasma physics

    NASA Technical Reports Server (NTRS)

    Bailey, Andrew, III; Hershkowitz, Noah

    1988-01-01

    A new class of stationary double layer structure, with three or more distinct steps, is demonstrated in the laboratory. A large monotonic potential increase results from a series of smaller double layers. In many respects, these double layer structures resemble those inferred from satellite measurements of auroral double layers. This new class of double layer appears to depend on turbulence for its existence and to be a hybrid structure, intermediate between anomalous resistivity and BGK double layers.

  6. Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacks

    SciTech Connect

    Raasch, D.; Mathieu, C.

    1997-08-01

    The room-temperature wall energy {sigma}{sub w}=4.0{times}10{sup {minus}3}J/m{sup 2} of an exchange-coupled Tb{sub 19.6}Fe{sub 74.7}Co{sub 5.7}/Dy{sub 28.5}Fe{sub 43.2}Co{sub 28.3} double layer stack can be reduced by introducing a soft magnetic intermediate layer in between both layers exhibiting a significantly smaller anisotropy compared to Tb{endash}FeCo and Dy{endash}FeCo. {sigma}{sub w} will decrease linearly with increasing intermediate layer thickness, d{sub IL}, until the wall is completely located within the intermediate layer for d{sub IL}{ge}d{sub w}, where d{sub w} denotes the wall thickness. Thus, d{sub w} can be obtained from the plot {sigma}{sub w} versus d{sub IL}. We determined {sigma}{sub w} and d{sub w} on Gd{endash}FeCo intermediate layers with different anisotropy behavior (perpendicular and in-plane easy axis) and compared the results with data obtained from Brillouin light-scattering measurements, where exchange stiffness, A, and uniaxial anisotropy, K{sub u}, could be determined. With the knowledge of A and K{sub u}, wall energy and thickness were calculated and showed an excellent agreement with the magnetic measurements. A ten times smaller perpendicular anisotropy of Gd{sub 28.1}Fe{sub 71.9} in comparison to Tb{endash}FeCo and Dy{endash}FeCo resulted in a much smaller {sigma}{sub w}=1.1{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=24nm at 300 K. A Gd{sub 34.1}Fe{sub 61.4}Co{sub 4.5} with in-plane anisotropy at room temperature showed a further reduced {sigma}{sub w}=0.3{times}10{sup {minus}3}J/m{sup 2} and d{sub w}=17nm. The smaller wall energy was a result of a different wall structure compared to perpendicular layers. {copyright} {ital 1997 American Institute of Physics.}

  7. Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

    SciTech Connect

    Baek, Seung-heon Chris; Seo, Yu-Jin; Oh, Joong Gun; Albert Park, Min Gyu; Bong, Jae Hoon; Yoon, Seong Jun; Lee, Seok-Hee; Seo, Minsu; Park, Seung-young; Park, Byong-Guk

    2014-08-18

    In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors.

  8. Large grain growth of Ge-rich Ge{sub 1−x}Sn{sub x} (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

    SciTech Connect

    Kurosawa, Masashi; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki; Ikenoue, Hiroshi

    2014-02-10

    We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1−x}Sn{sub x} (x < 0.02) on SiO{sub 2} crystallized by pulsed laser annealing (PLA) in air and water. Despite the very low Sn content of 2%, Sn atoms within the GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (∼800 nmϕ) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ∼0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

  9. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe3GeTe2

    DOE PAGES

    Zhuang, Houlong L.; Kent, P. R. C.; Hennig, Richard G.

    2016-04-06

    Comore » mputationally characterizing magnetic properies of novel two-dimensional (2D) materials serves as an important first step of exploring possible applications. Using density-functional theory, we show that single-layer Fe3GeTe2 is a potential 2D material with sufficiently low formation energy to be synthesized by mechanical exfoliation from the bulk phase with a van der Waals layered structure. In addition, we calculated the phonon dispersion demonstrating that single-layer Fe3GeTe2is dynamically stable. Furthermore, we find that similar to the bulk phase, 2D Fe3GeTe2 exhibits amagnetic moment that originates from a Stoner instability. In contrast to other 2D materials, we find that single-layer Fe3GeTe2 exhibits a significant uniaxial magnetocrystalline anisotropy energy of 920μ eV per Fe atom originating from spin-orbit coupling. In conclusion, we show that applying biaxial tensile strains enhances the anisotropy energy, which reveals strong magnetostriction in single-layer Fe3GeTe2 with a sizable magneostrictive coefficient. Our results indicate that single-layer Fe3GeTe2 is potentially useful for magnetic storage applications.« less

  10. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  11. Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.

    PubMed

    Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Huo, Yijie; Rudy, Charles W; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

    2014-01-01

    We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.

  12. Intermediate scaling regime for multilayer epitaxial growth

    NASA Astrophysics Data System (ADS)

    Ross, Richard S.; Gyure, Mark F.

    2000-04-01

    We explore the layer-by-layer (Frank-van der Merwe) growth regime within the context of a discrete solid-on-solid kinetic Monte Carlo model. Our results demonstrate a nontrivial scaling of the lattice step edge density, a quantity that oscillates about a nominally constant value prior to the onset of kinetic roughening. This value varies with the ratio of the surface diffusivity to the deposition flux, R≡D/F, as a nearly perfect power law over a wide range of R. This ``intermediate'' scaling regime extends in coverage from one to at least a few tens of monolayers, which is exactly the regime of most importance to the growth of device-quality semiconductor quantum heterostructures. Comparison with lowest-order linear theories for height fluctuations demonstrates the validity of the Wolf-Villain mean-field theory for the description of lattice step density and ``in-plane'' structure for all coverages down to the first monolayer of growth. However, the mean-field theory does not fully account for the surface width in this regime and consequently does not quantitatively predict the observed step density scaling.

  13. Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1−x}Sn{sub x}- and strained Ge-based channels

    SciTech Connect

    Chou, H.-Y.; Afanas'ev, V. V. Houssa, M.; Stesmans, A.; Vincent, B.; Gencarelli, F.; Shimura, Y.; Merckling, C.; Loo, R.; Nakatsuka, O.; Zaima, S.

    2014-05-19

    Spectroscopy of internal photoemission of electrons from Ge and Ge{sub 1−x}Sn{sub x} (x ≤ 0.08) alloys into amorphous Al{sub 2}O{sub 3} is used to evaluate the energy of the semiconductor valence band top. It is found that in Ge and Ge{sub 1−x}Sn{sub x} the valence bands are aligned within the measurement accuracy (±0.05 eV) irrespective of the strain imposed on the semiconductor or by the kind of passivating inter-layer applied between the semiconductor and alumina. This indicates that the Ge{sub 1−x}Sn{sub x}-stressor approach may be useful for strain engineering in p-channel Ge metal-oxide-semiconductor transistors.

  14. Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

    SciTech Connect

    Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M.; Stoffel, M.; Rinnert, H.; Ghrib, A.; El Kurdi, M.; Boucaud, P.; Murota, J.

    2013-08-28

    Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

  15. Regrowth characteristics of SiGe/Si by IBIEC and SPEG

    NASA Astrophysics Data System (ADS)

    Awane, K.; Kokubo, Y.; Yomogida, M.; Nishimura, T.; Yamamoto, Y.

    2013-07-01

    Single crystalline Si1-xGex/Si with three kinds of Ge contents (x: 0.05, 0.1, and 0.2) with thicknesses of 400-440 nm were amorphized by 500 keV (x: 0.05 and 0.1) and 600 keV (x: 0.2) Ge ion beam bombardment to a fluence of 1.0 × 1016 ions/cm2 at room temperature. The regrowth behavior of the damaged layers were compared between ion beam induced epitaxial crystallization (IBIEC) by 2.0 MeV Ge ions at 300 °C to fluences of 1.0-3.0 × 1016 ions/cm2 and solid phase epitaxial growth (SPEG) carried out in a flowing N2 ambient for up to 40 min at 600 °C. Rutherford backscattering spectroscopy (RBS) with channeling techniques revealed that crystallinity improvement by IBIEC tended to be saturated with increasing fluence while crystallinity improvement by SPEG was proceeded with increasing annealing time and relatively high quality SiGe layers were obtained. Crystallinity improvement was more rapid and pronounced for SiGe with higher Ge concentration both in IBIEC and SPEG. In contrast to the case of SPEG at 600 °C, transmission electron microscope (TEM) image in SiGe treated by IBIEC showed that bunches of dislocation loops remained as islands surrounded by single crystalline lattice layers image, leading to the high RBS aligned yield even after completion of the layer-by-layer regrowth.

  16. The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient

    PubMed Central

    2014-01-01

    We report a unique growth and migration behavior of Ge nanocrystallites mediated by the presence of Si interstitials under thermal annealing at 900°C within an H2O ambient. The Ge nanocrystallites were previously generated by the selective oxidation of SiGe nanopillars and appeared to be very sensitive to the presence of Si interstitials that come either from adjacent Si3N4 layers or from within the oxidized nanopillars. A cooperative mechanism is proposed, wherein the Si interstitials aid in both the migration and coarsening of these Ge nanocrystallites through Ostwald ripening, while the Ge nanocrystallites, in turn, appear to enhance the generation of Si interstitials through catalytic decomposition of the Si-bearing layers. PMID:25045342

  17. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  18. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics.

    PubMed

    Javey, Ali; Nam, SungWoo; Friedman, Robin S; Yan, Hao; Lieber, Charles M

    2007-03-01

    We report a general approach for three-dimensional (3D) multifunctional electronics based on the layer-by-layer assembly of nanowire (NW) building blocks. Using germanium/silicon (Ge/Si) core/shell NWs as a representative example, ten vertically stacked layers of multi-NW field-effect transistors (FETs) were fabricated. Transport measurements demonstrate that the Ge/Si NW FETs have reproducible high-performance device characteristics within a given device layer, that the FET characteristics are not affected by sequential stacking, and importantly, that uniform performance is achieved in sequential layers 1 through 10 of the 3D structure. Five-layer single-NW FET structures were also prepared by printing Ge/Si NWs from lower density growth substrates, and transport measurements showed similar high-performance characteristics for the FETs in layers 1 and 5. In addition, 3D multifunctional circuitry was demonstrated on plastic substrates with sequential layers of inverter logical gates and floating gate memory elements. Notably, electrical characterization studies show stable writing and erasing of the NW floating gate memory elements and demonstrate signal inversion with larger than unity gain for frequencies up to at least 50 MHz. The ability to assemble reproducibly sequential layers of distinct types of NW-based devices coupled with the breadth of NW building blocks should enable the assembly of increasing complex multilayer and multifunctional 3D electronics in the future.

  19. Global transition path search for dislocation formation in Ge on Si(001)

    NASA Astrophysics Data System (ADS)

    Maras, E.; Trushin, O.; Stukowski, A.; Ala-Nissila, T.; Jónsson, H.

    2016-08-01

    Global optimization of transition paths in complex atomic scale systems is addressed in the context of misfit dislocation formation in a strained Ge film on Si(001). Such paths contain multiple intermediate minima connected by minimum energy paths on the energy surface emerging from the atomic interactions in the system. The challenge is to find which intermediate states to include and to construct a path going through these intermediates in such a way that the overall activation energy for the transition is minimal. In the numerical approach presented here, intermediate minima are constructed by heredity transformations of known minimum energy structures and by identifying local minima in minimum energy paths calculated using a modified version of the nudged elastic band method. Several mechanisms for the formation of a 90° misfit dislocation at the Ge-Si interface are identified when this method is used to construct transition paths connecting a homogeneously strained Ge film and a film containing a misfit dislocation. One of these mechanisms which has not been reported in the literature is detailed. The activation energy for this path is calculated to be 26% smaller than the activation energy for half loop formation of a full, isolated 60° dislocation. An extension of the common neighbor analysis method involving characterization of the geometrical arrangement of second nearest neighbors is used to identify and visualize the dislocations and stacking faults.

  20. Cu2Sn1‑ x Ge x S3 solar cells fabricated with a graded bandgap structure

    NASA Astrophysics Data System (ADS)

    Umehara, Mitsutaro; Tajima, Shin; Aoki, Yuko; Takeda, Yasuhiko; Motohiro, Tomoyoshi

    2016-07-01

    We fabricated Cu2Sn1‑ x Ge x S3 (CTGS) solar cells with a graded bandgap structure in order to improve their photovoltaic performance. Bandgap gradation was formed by changing the Ge/Sn ratio in the depth direction of the CTGS layers. The composition profile of each sample was measured by secondary ion mass spectrometry, and we confirmed that the Ge/Sn ratio near the buffer layer was lower than that near the back electrode. This means that the bandgap increases with depth from the surface. The performance of the cells was improved to over 6.7% in conversion efficiency.

  1. Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory

    NASA Astrophysics Data System (ADS)

    Yin, You; Zhang, Yulong; Takehana, Yousuke; Kobayashi, Ryota; Zhang, Hui; Hosaka, Sumio

    2016-06-01

    In this study, we investigated the fast switching and resistance control in a lateral GeTe-based phase-change memory (PCM). The resistivity of GeTe as a function of annealing temperature showed that it changed by more than 6 orders of magnitude in a very narrow temperature range. X-ray diffraction patterns of GeTe films indicated that GeTe had only one crystal structure, that is, face-centered cubic. It was demonstrated that the lateral device with a top conducting layer had a good performance. The operation characteristics of the GeTe-based lateral PCM device showed that it could be operated even when sub-10-ns voltage pulses were applied, making it much faster than a Ge2Sb2Te5-based device. The device resistance was successfully controlled by applying a staircase-like pulse, which enables the device to be used for fast multilevel storage.

  2. Tasman Leakage of intermediate waters as inferred from Argo floats

    NASA Astrophysics Data System (ADS)

    Rosell-Fieschi, Miquel; Rintoul, Stephen R.; Gourrion, Jeröme; Pelegrí, Josep L.

    2013-10-01

    use Argo float trajectories to infer ocean current velocity at the sea surface and 1000 dbar near Australia. The East Australian Current flows southward along the east coast of Australia at both surface and intermediate levels, but only the intermediate waters leak round the southern tip of Tasmania and cross the Great Australian Bight. We calculate the transport of Antarctic Intermediate Water (AAIW) between the southern Australian coast and the Antarctic Circumpolar Current (ACC) as the velocity at 1000 dbar times the layer thickness. Between March 2006 and December 2012, the Eulerian AAIW transport through 147°E ranges between 0 and 12.0 sverdrup (Sv). The mean Tasman Leakage of intermediate waters from the Pacific Ocean into the Indian Ocean, obtained using all Argo data until March 2013, is 3.8 ± 1.3 Sv. The mean intermediate water transport into the Indian Ocean through 115°E increases to 5.2 ± 1.8 Sv due to contributions from the westward recirculation of ACC waters.

  3. Monitoring and robust induction of nephrogenic intermediate mesoderm from human pluripotent stem cells.

    PubMed

    Mae, Shin-Ichi; Shono, Akemi; Shiota, Fumihiko; Yasuno, Tetsuhiko; Kajiwara, Masatoshi; Gotoda-Nishimura, Nanaka; Arai, Sayaka; Sato-Otubo, Aiko; Toyoda, Taro; Takahashi, Kazutoshi; Nakayama, Naoki; Cowan, Chad A; Aoi, Takashi; Ogawa, Seishi; McMahon, Andrew P; Yamanaka, Shinya; Osafune, Kenji

    2013-01-01

    A method for stimulating the differentiation of human pluripotent stem cells into kidney lineages remains to be developed. Most cells in kidney are derived from an embryonic germ layer known as intermediate mesoderm. Here we show the establishment of an efficient system of homologous recombination in human pluripotent stem cells by means of bacterial artificial chromosome-based vectors and single-nucleotide polymorphism array-based detection. This system allowed us to generate human-induced pluripotent stem cell lines containing green fluorescence protein knocked into OSR1, a specific intermediate mesoderm marker. We have also established a robust induction protocol for intermediate mesoderm, which produces up to 90% OSR1(+) cells. These human intermediate mesoderm cells can differentiate into multiple cell types of intermediate mesoderm-derived organs in vitro and in vivo, thereby supplying a useful system to elucidate the mechanisms of intermediate mesoderm development and potentially providing a cell source for regenerative therapies of the kidney.

  4. Buffer layers on metal alloy substrates for superconducting tapes

    DOEpatents

    Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

    2004-10-05

    An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected I.sub.c 's of over 200 Amperes across a sample 1 cm wide.

  5. Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.

    2006-11-28

    Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

  6. Mechanics of vimentin intermediate filaments

    NASA Technical Reports Server (NTRS)

    Wang, Ning; Stamenovic, Dimitrijie

    2002-01-01

    It is increasingly evident that the cytoskeleton of living cells plays important roles in mechanical and biological functions of the cells. Here we focus on the contribution of intermediate filaments (IFs) to the mechanical behaviors of living cells. Vimentin, a major structural component of IFs in many cell types, is shown to play an important role in vital mechanical and biological functions such as cell contractility, migration, stiffness, stiffening, and proliferation.

  7. Neutron transmutation doped Ge bolometers

    NASA Technical Reports Server (NTRS)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  8. Structural and Optical Properties of SnxGe1-x thin films and Quantum Dots

    NASA Astrophysics Data System (ADS)

    Blacksberg, Jordana

    2005-03-01

    SnxGe1-x layers and quantum dots (QDs) are of great interest as materials that could provide tunable direct band gaps, allowing completely group IV-based optoelectronic devices. These materials could be used in a wide range of applications such as emitters, infrared detectors, and thermophotovoltaics. However, substantial challenges remain in the growth and processing of these materials. We have grown SnxGe1-x films by Molecular Beam Epitaxy (MBE), using low growth temperatures (<200^oC) in order to grow fully strained layers. X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy data indicate high-quality epitaxial films. Post-growth annealing was used to form QDs. Either QDs or quantum wires may be formed depending on annealing parameters. The effects of varying substrate temperature between 400C (wires) and 750C (QDs) on size and distribution of quantum structures were explored and will be discussed. Sn concentration (0-10%) and film thickness (40nm - 200nm) were also varied. Optical properties probed by Fourier transform infrared spectroscopy (FTIR) will be presented. FTIR spectra clearly show the decrease in band gap of SnxGe1-x layers with increasing Sn fraction up to 10%. Photomodulated reflectance (PR) is another sensitive method for probing critical points in SnxGe1-x band structure, and can detect both direct and indirect transitions. PR results for SnxGe1-x layers will also be discussed.

  9. Aqueous electrodeposition of Ge monolayers.

    PubMed

    Liang, Xuehai; Kim, Youn-Geun; Gebergziabiher, Daniel K; Stickney, John L

    2010-02-16

    The electrodeposition of germanium on Au(111) in aqueous solutions has been investigated by means of cyclic voltammetry, Auger electron spectroscopy, and in situ scanning tunneling microscopy (STM). The data yield a picture of germanium deposition, which starts with the formation of two well-ordered hydroxide phases, with 1/3 ML and 4/9 ML coverages upon initial reduction of the Ge(IV) species (probably H(2)GeO(3) at pH 4.7). Those structures appear to result from a three-electron reduction to form surface-limited structures with (square root(3) x square root(3))R30 degrees or (3 x 3) unit cells, respectively. Further reduction, probably in a two-electron process from the hydroxide structures, resulted in a germanium hydride structure, again surface-limited, with a coverage of close to 0.8 ML. The hydride structure is very flat, though with the periodic modulation characteristic of a Moiré pattern. Longer deposition times and lower potentials resulted in increased coverage of Ge in some cases, but with apparently limited coverage as a function of pH. The maximum Ge coverage, about 4 ML, was observed using a pH 9.32 deposition solution. At potentials negative of the Moiré pattern, about -850 mV versus Ag/AgCl, a "corruption" of the smooth Moiré pattern occurred. This roughening appears to mark the initial formation of a Au-Ge alloy, accounting for the observation of coverage in excess of that needed to form the Moiré pattern at some pH values.

  10. NpCoGe, near quantum criticality?

    NASA Astrophysics Data System (ADS)

    Colineau, E.; Eloirdi, R.; Griveau, J.-C.; Gaczynski, P.; Shick, A. B.

    2013-05-01

    The magnetic and electronic properties of NpCoGe are reported. NpCoGe orders antiferromagnetically at T N ≈ 13 K with an average ordered magnetic moment < µ N p > = 0.80 µ B . The comparison with NpRhGe and uranium analogues suggests the leading role of f-d hybridization, the rather delocalized character of 5f electrons in NpCoGe and its possible proximity to a magnetic quantum critical point.

  11. Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications

    NASA Astrophysics Data System (ADS)

    Reboud, Vincent; Widiez, Julie; Hartmann, Jean Michel; Osvaldo Dias, Guilherme; Fowler, Daivid; Chelnokov, Alexei; Gassenq, Alban; Guilloy, Kevin; Pauc, Nicolas; Calvo, Vincent; Geiger, Richard; Zabel, T.; Faist, Jérôme; Sigg, Hans

    2015-02-01

    Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 µm). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.

  12. GaAs Photovoltaics on Polycrystalline Ge Substrates

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  13. Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH3

    PubMed Central

    Ma, Yandong; Dai, Ying; Wei, Wei; Huang, Baibiao; Whangbo, Myung-Hwan

    2014-01-01

    Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH3 by density functional calculations (DFT), and its dynamic stability by phonon dispersion calculations. Our results show that an isolated GeCH3 layer has no dynamic instability, and is a QSH insulator under reasonable strain. This QSH insulator has a large enough band gap (up to 108 meV) at 12% strain. The advantageous features of this QSH insulator for practical room-temperature applications are discussed. PMID:25465887

  14. Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

    SciTech Connect

    Hrauda, N.; Zhang, J. J.; Groiss, H.; Etzelstorfer, T.; Stangl, J.; Bauer, G.; Gerharz, J. C.; Holy, V.; Deiter, C.; Seeck, O. H.

    2013-01-21

    We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 Degree-Sign C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

  15. Superconductive articles including cerium oxide layer

    DOEpatents

    Wu, Xin D.; Muenchausen, Ross E.

    1993-01-01

    A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

  16. Mass spectroscopic characterization of the GeSe:GeI4 vapor transport system

    NASA Technical Reports Server (NTRS)

    Buchan, Nicholas I.; Rosenberger, Franz

    1987-01-01

    The GeSe:GeI4 vapor crystal growth system was characterized mass spectroscopically. A steady-state Knudsen effusion technique was developed to simulate the equilibrium conditions at one end of a vapor transport ampoule. It was found that the previously neglected equilibrium GeSe2(s) = GeSe(v) + 1/2Se2(v) reduces the Se2(v) concentration to an extent that sublimation/condensation of GeSe becomes the dominant transport mechanism. At total pressures near 1 atm the concentration of an additional Ge-Se-I vapor species becomes comparable to that of GeSe(v).

  17. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect

    Oka, Hiroshi Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  18. Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation

    NASA Astrophysics Data System (ADS)

    Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2014-08-01

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorous ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  19. The need for an intermediate mass scale in GUTs

    NASA Technical Reports Server (NTRS)

    Shafi, Q.

    1983-01-01

    The minimal SU(5) grand unified field theory (GUT) model fails to resolve the strong charge parity (CP) problem, suffers from the cosmological monopole problem, sheds no light on the nature of the 'dark' mass in the universe, and predicts an unacceptably low value for the baryon asymmetry. All these problems can be overcome in suitable grand unified axion models with an intermediate mass scale of about 10 to the 11th power to 10 to the 12th power GeV. An example based on the gauge group SO(10) is presented. Among other things, it predicts that the axions comprise the 'dark' mass in the universe, and that there exists a galactic monopole flux of 10 to the -8th power to 10 to the -7th power/sq cm/yr. Other topics that are briefly discussed include proton decay, family symmetry, neutrino masses and the gauge hierarchy problem.

  20. Role of Intermediate Filaments in Vesicular Traffic.

    PubMed

    Margiotta, Azzurra; Bucci, Cecilia

    2016-01-01

    Intermediate filaments are an important component of the cellular cytoskeleton. The first established role attributed to intermediate filaments was the mechanical support to cells. However, it is now clear that intermediate filaments have many different roles affecting a variety of other biological functions, such as the organization of microtubules and microfilaments, the regulation of nuclear structure and activity, the control of cell cycle and the regulation of signal transduction pathways. Furthermore, a number of intermediate filament proteins have been involved in the acquisition of tumorigenic properties. Over the last years, a strong involvement of intermediate filament proteins in the regulation of several aspects of intracellular trafficking has strongly emerged. Here, we review the functions of intermediate filaments proteins focusing mainly on the recent knowledge gained from the discovery that intermediate filaments associate with key proteins of the vesicular membrane transport machinery. In particular, we analyze the current understanding of the contribution of intermediate filaments to the endocytic pathway. PMID:27120621

  1. Intermediate filaments: not just for structure anymore.

    PubMed

    Liem, Ronald K H

    2013-04-22

    A recent paper has identified the tumor suppressor APC as a linker protein between intermediate filaments and microtubules. In the absence of APC, intermediate filaments collapse and the cells are no longer polarized and fail to migrate.

  2. Role of Intermediate Filaments in Vesicular Traffic

    PubMed Central

    Margiotta, Azzurra; Bucci, Cecilia

    2016-01-01

    Intermediate filaments are an important component of the cellular cytoskeleton. The first established role attributed to intermediate filaments was the mechanical support to cells. However, it is now clear that intermediate filaments have many different roles affecting a variety of other biological functions, such as the organization of microtubules and microfilaments, the regulation of nuclear structure and activity, the control of cell cycle and the regulation of signal transduction pathways. Furthermore, a number of intermediate filament proteins have been involved in the acquisition of tumorigenic properties. Over the last years, a strong involvement of intermediate filament proteins in the regulation of several aspects of intracellular trafficking has strongly emerged. Here, we review the functions of intermediate filaments proteins focusing mainly on the recent knowledge gained from the discovery that intermediate filaments associate with key proteins of the vesicular membrane transport machinery. In particular, we analyze the current understanding of the contribution of intermediate filaments to the endocytic pathway. PMID:27120621

  3. Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

    SciTech Connect

    Zhang, R.; Iwasaki, T.; Taoka, N.; Takenaka, M.; Takagi, S.

    2011-03-14

    An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al{sub 2}O{sub 3}/GeO{sub x}/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopy and transmission electron microscope characterizations have revealed that a GeO{sub x} layer is formed beneath the Al{sub 2}O{sub 3} capping layer by exposing the Al{sub 2}O{sub 3}/Ge structures to ECR oxygen plasma. The interface trap density (D{sub it}) of Au/Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS capacitors is found to be significantly suppressed down to lower than 10{sup 11} cm{sup -2} eV{sup -1}. Especially, a plasma postoxidation time of as short as 10 s is sufficient to reduce D{sub it} with maintaining the equivalent oxide thickness (EOT). As a result, the minimum D{sub it} values and EOT of 5x10{sup 10} cm{sup -2} eV{sup -1} and 1.67 nm, and 6x10{sup 10} cm{sup -2} eV{sup -1} and 1.83 nm have been realized for Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS structures with p- and n-type substrates, respectively.

  4. A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step

    NASA Astrophysics Data System (ADS)

    Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen

    2015-05-01

    We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO2/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO2 layer between the Ge QD and SiGe shell fabricated during the single-step process is the result of an exquisitely controlled dynamic balance between the fluxes of oxygen and silicon interstitials. The high-quality interface properties of our "designer" heterostructure are evidenced by the low interface trap density of as low as 2-4 × 1011 cm-2 eV-1 and superior transfer characteristics measured for Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Thanks to the very thin interfacial SiO2 layer, carrier storage within the Ge QDs with good memory endurance was established under relatively low-voltage programming/erasing conditions. We hope that our unique self-aligned, gate-stacking heterostructure provides an effective approach for the production of next-generation, high-performance Ge gate/SiO2/SiGe channel MOSFETs.

  5. A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step.

    PubMed

    Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen

    2015-01-01

    We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO2/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO2 layer between the Ge QD and SiGe shell fabricated during the single-step process is the result of an exquisitely controlled dynamic balance between the fluxes of oxygen and silicon interstitials. The high-quality interface properties of our "designer" heterostructure are evidenced by the low interface trap density of as low as 2-4 × 10(11) cm(-2) eV(-1) and superior transfer characteristics measured for Ge-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Thanks to the very thin interfacial SiO2 layer, carrier storage within the Ge QDs with good memory endurance was established under relatively low-voltage programming/erasing conditions. We hope that our unique self-aligned, gate-stacking heterostructure provides an effective approach for the production of next-generation, high-performance Ge gate/SiO2/SiGe channel MOSFETs.

  6. Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

    2016-05-01

    Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

  7. Intermediate Filaments in Caenorhabditis elegans.

    PubMed

    Zuela, Noam; Gruenbaum, Yosef

    2016-01-01

    More than 70 different genes in humans and 12 different genes in Caenorhabditis elegans encode the superfamily of intermediate filament (IF) proteins. In C. elegans, similar to humans, these proteins are expressed in a cell- and tissue-specific manner, can assemble into heteropolymers and into 5-10nm wide filaments that account for the principal structural elements at the nuclear periphery, nucleoplasm, and cytoplasm. At least 5 of the 11 cytoplasmic IFs, as well as the nuclear IF, lamin, are essential. In this chapter, we will include a short review of our current knowledge of both cytoplasmic and nuclear IFs in C. elegans and will describe techniques used for their analyses.

  8. Formation of silicene-germanene heterostructures by Ge deposition on epitaxial silicene

    NASA Astrophysics Data System (ADS)

    Awatani, Yuto; Fleurence, Antoine; Yamada-Takamura, Yukiko

    Silicene and germanene are two dimensional honeycomb sheets composed of Si and Ge atoms. Epitaxial silicene and germanene form spontaneously on ZrB2(0001) thin films grown on Si(111) and Ge(111) substrates and can be identified by (2X2)- and (√3X √3)-reconstruction of ZrB2(0001) respectively. In the present work, we demonstrate that silicene-germanene heterostructures can be formed by deposition of Ge on epitaxial silicene and by subsequent annealing. LEED and STM analysis revealed the growth of the following Si-Ge structures depending on preparation conditions. (1): After annealing at 830 K, (2X2)- and (√3X √3)-reconstructed areas existed side by side, which suggests that a two-dimensional silicene-germanene heterostructures is formed. (2): After annealing at 1070 K, the surface is (2X2)-reconstructed, with a heterogenous atomic contrast different from silicene which suggests the incorporation of Ge atoms in the silicene lattice. (3): After annealing this mixed Si-Ge layer at 830 K, a (2 √3X2 √3)-reconstruction is observed, in agreement with the overlapping of (√3X √3)- and (2X2)-reconstructed layers. The structure is presumably a silicene-germanene heterostack structure

  9. Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks

    NASA Astrophysics Data System (ADS)

    Kothari, Shraddha; Joishi, Chandan; Nejad, Hasan; Variam, Naushad; Lodha, Saurabh

    2016-08-01

    This work reports Vfb tuning of TiN/HfO2 gate stacks on Ge using low energy plasma-assisted doping with N2 without significant impact on gate capacitance and gate/channel interface trap densities. As required for multi-VT Ge p-FinFETs, controlled change in effective work function up to 180 mV from the near midgap to the near valence band edge of Ge is demonstrated by varying implant dose and energy. Unlike Si gate stacks, increased gate leakage in implanted Ge gate stacks is shown to result from traps created in the HfO2 layer during the implant and exposed to channel carriers due to a low band offset GeO2 interfacial layer (IL). Recovery of gate leakage is demonstrated by substituting GeO2 with an Al2O3 IL. Further, a simple physical model is proposed to extract the work function and oxide charge components of the change in Vfb for varying implant doses and energies.

  10. Morphological switching in synchrotron-radiation-excited Ge homoepitaxy: Transition from kinetic roughening to smoothing

    SciTech Connect

    Akazawa, Housei

    2005-05-15

    The surface morphology of Ge films during GeH{sub 4}-source molecular beam epitaxy on a Ge(100) substrate is dramatically changed through irradiation with synchrotron radiation (h{nu}>100 eV). At temperatures below 300 deg. C, a two-dimensionally flat film continues to grow with the surface tightly passivated by a GeH{sub x} hydride layer. At temperatures above 350 deg. C, dangling bonds are partially terminated with hydrogen atoms while Ge adatoms are highly mobile, resulting in a nonuniform nucleation that creates the islands. Small islands merge into a few-hundred-nanometer-tall islands surrounded by the (113)-face sidewalls. This kinetic roughening continues until the nucleation on the (001) plane ceases due to the buildup of the GeH{sub x} layer. Once the surface free energy is minimized by the hydrogen termination, flattening of the islands proceeds to reduce the chemical potential of the system. The valleys between the islands are preferentially filled, and the film is eventually converted into a smooth epilayer with no memory of the initial roughening.

  11. Multilayer Article Characterized by Low Coefficient of Thermal Expansion Outer Layer

    NASA Technical Reports Server (NTRS)

    Lee, Kang N. (Inventor)

    2004-01-01

    A multilayer article comprises a substrate comprising a ceramic or a silicon-containing metal alloy. The ceramic is a Si-containing ceramic or an oxide ceramic with or without silicon. An outer layer overlies the substrate and at least one intermediate layer is located between the outer layer and thc substrate. An optional bond layer is disposed between thc 1 least one intermediate layer and thc substrate. The at least one intermediate layer may comprise an optional chemical barrier layer adjacent the outer layer, a mullite-containing layer and an optional chemical barrier layer adjacent to the bond layer or substrate. The outer layer comprises a compound having a low coefficient of thermal expansion selected from one of the following systems: rare earth (RE) silicates; at least one of hafnia and hafnia-containing composite oxides; zirconia-containing composite oxides and combinations thereof.

  12. A new EXAFS investigation of local structural changes in amorphous and crystalline GeO(2) at high pressure.

    PubMed

    Vaccari, M; Aquilanti, G; Pascarelli, S; Mathon, O

    2009-04-01

    Structural transformations at high pressure in amorphous and quartz-like crystalline GeO(2) have been investigated by using a Paris-Edinburgh press coupled to EXAFS spectroscopy. From both the germanium absorption edge position and the Ge-O distance evolution, new detailed information has been obtained about the pressure behavior of the short range order. Crystalline GeO(2) undergoes a transformation from four- to six-fold coordination at about 8.5 GPa, but at least the whole 6-12 GPa pressure range should be considered as the transition region. On the other hand, amorphous GeO(2) is characterized by a much more gradual structural change and the full octahedral state is not reached at 13 GPa as commonly believed. Furthermore, no support to the recently claimed fully pentahedral intermediate state can be given. EXAFS signals of glassy GeO(2) beyond the first Ge-O shell qualitatively confirm the continuous breakdown of the intermediate range order up to 10 GPa.

  13. The Boundary Layer Radiometer

    NASA Astrophysics Data System (ADS)

    Irshad, Ranah; Bowles, N. E.; Calcutt, S. B.; Hurley, J.

    2010-10-01

    The Boundary Layer Radiometer is a small, low mass (<1kg) radiometer with only a single moving part - a scan/calibration mirror. The instrument consists of a three mirror telescope system incorporating an intermediate focus for use with miniature infrared and visible filters. It also has an integrated low power blackbody calibration target to provide long-term calibration stability The instrument may be used as an upward looking boundary layer radiometer for both the terrestrial and Martian atmospheres with appropriate filters for the mid-infrared carbon dioxide band, as well as a visible channel for the detection of aerosol components such as dust. The scan mirror may be used to step through different positions from the local horizon to the zenith, allowing the vertical temperature profile of the atmosphere to be retrieved. The radiometer uses miniature infrared filter assemblies developed for previous space-based instruments by Oxford, Cardiff and Reading Universities. The intermediate focus allows for the use of upstream blocking filters and baffles, which not only simplifies the design of the filters and focal plane assembly, but also reduces the risk of problems due to stray light. Combined with the calibration target this means it has significant advantages over previous generations of small radiometers.

  14. 34 CFR 200.17 - Intermediate goals.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 34 Education 1 2010-07-01 2010-07-01 false Intermediate goals. 200.17 Section 200.17 Education... Programs Operated by Local Educational Agencies Adequate Yearly Progress (ayp) § 200.17 Intermediate goals. Each State must establish intermediate goals that increase in equal increments over the period...

  15. Grand unification, axion, and inflation in Intermediate Scale Supersymmetry

    NASA Astrophysics Data System (ADS)

    Hall, Lawrence J.; Nomura, Yasunori; Shirai, Satoshi

    2014-06-01

    A class of supersymmetric grand unified theories is introduced that has a single scale below the cutoff, that of the supersymmetry breaking masses . For a wide range of the dimensionless parameters, agreement with the observed mass of the Higgs boson determines ~ 109-1013 GeV, yielding Intermediate Scale Supersymmetry. We show that within this framework it is possible for seesaw neutrino masses, axions, and inflation to be described by the scale m, offering the possibility of a unified origin of disparate phenomena. Neutrino masses allowing for thermal leptogenesis can be obtained, and the axion decay constant lies naturally in the range f a ~ 109-1011 GeV, consistent with a recent observational suggestion of high scale inflation. A minimal SU(5) model is presented that illustrates these features. In this model, the only states at the grand unified scale are those of the heavy gauge supermultiplet. The grand unified partners of the Higgs doublets have a mass of order m, leading to the dominant proton decay mode p → K +, which may be probed in upcoming experiments. Dark matter may be winos, with mass environmentally selected to the TeV scale, and/or axions. Gauge coupling unification is found to be successful, especially if the wino is at the TeV scale.

  16. Syntheses, Crystal Structures, Ion-Exchange, and Photocatalytic Properties of Two Amine-Directed Ge-Sb-S Compounds.

    PubMed

    Zhang, Bo; Feng, Mei-Ling; Cui, Hong-Hua; Du, Cheng-Feng; Qi, Xing-Hui; Shen, Nan-Nan; Huang, Xiao-Ying

    2015-09-01

    Among numerous heterometallic chalcogenidoantimonates, relatively a few amine-directed Ge-Sb-S compounds have been synthesized. Presented here are the solvothermal syntheses, crystal structures, and ion-exchange, optical, and photocatalytic properties of two novel amine-directed Ge-Sb-S compounds, namely, [CH3NH3]20Ge10Sb28S72·7H2O (1) and [(CH3CH2CH2)2NH2]3Ge3Sb5S15·0.5(C2H5OH) (2). The structure of 1 features an unprecedented two-dimensional Ge-Sb-S double-layer composed of two twofold rotational symmetry-related thick [Ge8Sb28S72]n(28n-) single layers adhered via vertex-sharing [GeS4] tetrahedra. Compound 2 features a unique [Ge3Sb5S15]n(3n-) slab perforated with large elliptic-like windows. Remarkably, compound 1 exhibited excellent Cs(+) ion-exchange property despite the presence of excess competitive cations, such as Na(+), K(+), Mg(2+), and Ca(2+) ions. In addition, compound 1 displayed visible-light-driven photocatalytic activity for degradation of rhodamine B.

  17. p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

    NASA Technical Reports Server (NTRS)

    Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

    2000-01-01

    A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

  18. Structure and bonding in Yb4MgGe4: Yb2+/Yb3+ mixed-valency and charge separation.

    PubMed

    Tobash, Paul H; Bobev, Svilen

    2006-03-22

    Reported are the synthesis and the structural characterization of a new derivative of the RE5Tt4 family (RE = Rare-earth; Tt = Tetrel, = Si, Ge, i.e., group 14 element), Yb5-xMgxGe4 (x approximately 1). Crystal data for Yb4.04(1)Mg0.96(1)Ge4 at 23 degrees C: orthorhombic, space group Pnma (No. 62), Z = 4; a = 7.155(2) A, b = 14.769(5) A, c = 7.688(2) A; V = 812.5(4) A3. This phase is an example of a substitution of lanthanide metal (Yb) with a nonmagnetic element (Mg) within this structure type. Its structure can alternatively be described as an intergrowth of the hypothetical Yb2MgGe2, which features flat infinite [MgGe2]4- layers and the hypothetical YbGe with [Ge2]6- dimers. The flat [MgGe2]4- layers propagate in two dimensions (a and c), and they are offset by a distance of 1/4.a with respect to one another and are interspaced with layers of [Ge2]6- dimers and Yb cations filling the space between them. According to the structural and physical property data, Yb4MgGe4 is a heterogeneous mixed-valent compound, i.e. a system where one of the two symmetry-inequivalent Yb sites has atoms in closed-shell Yb2+ configuration, whereas the Yb3+ cations occupy a different crystallographic site.

  19. SPEIR: A Ge Compton Camera

    SciTech Connect

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  20. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    NASA Astrophysics Data System (ADS)

    Ceylan, Abdullah; Ozcan, Yusuf; Orujalipoor, Ilghar; Huang, Yen-Chih; Jeng, U.-Ser; Ide, Semra

    2016-06-01

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.