Computational modeling of drug-resistant bacteria. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacDougall, Preston

2015-03-12

Initial proposal summary: The evolution of antibiotic-resistant mutants among bacteria (superbugs) is a persistent and growing threat to public health. In many ways, we are engaged in a war with these microorganisms, where the corresponding arms race involves chemical weapons and biological targets. Just as advances in microelectronics, imaging technology and feature recognition software have turned conventional munitions into smart bombs, the long-term objectives of this proposal are to develop highly effective antibiotics using next-generation biomolecular modeling capabilities in tandem with novel subatomic feature detection software. Using model compounds and targets, our design methodology will be validated with correspondingly ultra-highmore » resolution structure-determination methods at premier DOE facilities (single-crystal X-ray diffraction at Argonne National Laboratory, and neutron diffraction at Oak Ridge National Laboratory). The objectives and accomplishments are summarized.« less

Potential Applications and Impact of Microelectronic and Telecommunication Technology in Health Care Delivery. Final Report.

ERIC Educational Resources Information Center

Mandex, Inc., Vienna, VA.

This compendium of current and recent innovative methods of health care delivery focuses on telemedicine, and educational and energy management and control applications. Each application is doumented in a project abstract describing the system and the technology employed, and citing relevant information sources and a personal or organizational…

REVIEW ARTICLE: How will physics be involved in silicon microelectronics

NASA Astrophysics Data System (ADS)

Kamarinos, Georges; Felix, Pierre

1996-03-01

By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

NASA Astrophysics Data System (ADS)

Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

2018-04-01

The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Atwell, William; Koontz, Steve; Normand, Eugene

2012-01-01

Three twentieth century technological developments, 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems, have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems. The effects of primary cosmic ray particles and secondary particle showers produced by nuclear reactions with the atmosphere, can determine the design and verification processes (as well as the total dollar cost) for manned and unmanned spacecraft avionics systems. Similar considerations apply to commercial and military aircraft operating at high latitudes and altitudes near the atmospheric Pfotzer maximum. Even ground based computational and controls systems can be negatively affected by secondary particle showers at the Earth s surface, especially if the net target area of the sensitive electronic system components is large. Finally, accumulation of both primary cosmic ray and secondary cosmic ray induced particle shower radiation dose is an important health and safety consideration for commercial or military air crews operating at high altitude/latitude and is also one of the most important factors presently limiting manned space flight operations beyond low-Earth orbit (LEO). In this paper we review the discovery of cosmic ray effects on the performance and reliability of microelectronic systems as well as human health and the development of the engineering and health science tools used to evaluate and mitigate cosmic ray effects in ground-based atmospheric flight, and space flight environments. Ground test methods applied to microelectronic components and systems are used in combinations with radiation transport and reaction codes to predict the performance of microelectronic systems in their operating environments. Similar radiation transport codes are used to evaluate possible human health effects of cosmic ray exposure, however, the health effects are based on worst-case analysis and extrapolation of a very limited human exposure data base combined with some limited experimental animal data. Finally, the limitations on human space operations beyond low-Earth orbit imposed by long term exposure to galactic cosmic rays are discussed.

Moore's law and the impact on trusted and radiation-hardened microelectronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Kwok Kee

2011-12-01

In 1965 Gordon Moore wrote an article claiming that integrated circuit density would scale exponentially. His prediction has remained valid for more than four decades. Integrated circuits have changed all aspects of everyday life. They are also the 'heart and soul' of modern systems for defense, national infrastructure, and intelligence applications. The United States government needs an assured and trusted microelectronics supply for military systems. However, migration of microelectronics design and manufacturing from the United States to other countries in recent years has placed the supply of trusted microelectronics in jeopardy. Prevailing wisdom dictates that it is necessary to usemore » microelectronics fabricated in a state-of-the-art technology for highest performance and military system superiority. Close examination of silicon microelectronics technology evolution and Moore's Law reveals that this prevailing wisdom is not necessarily true. This presents the US government the possibility of a totally new approach to acquire trusted microelectronics.« less

Single-event effects experienced by astronauts and microelectronic circuits flown in space

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNulty, P.J.

Models developed for explaining the light flashes experienced by astronauts on Apollo and Skylab missions were used with slight modification to explain upsets observed in microelectronic circuits. Both phenomena can be explained by the simple assumption that an event occurs whenever a threshold number of ionizations or isomerizations are generated within a sensitive volume. Evidence is consistent with the threshold being sharp in both cases, but fluctuations in the physical stimuli lead to a gradual rather than sharp increase in cross section with LET. Successful use of the model requires knowledge of the dimensions of the sensitive volume and themore » value of threshold. Techniques have been developed to determine these SEU parameters in modern circuits.« less

The 88-Inch Cyclotron: A One-Stop Facility for Electronics Radiation and Detector Testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kireeff Covo, M.; Albright, R. A.; Ninemire, B. F.

In outer space down to the altitudes routinely flown by larger aircrafts, radiation can pose serious issues for microelectronics circuits. The 88-Inch Cyclotron at Lawrence Berkeley National Laboratory is a sector-focused cyclotron and home of the Berkeley Accelerator Space Effects Facility, where the effects of energetic particles on sensitive microelectronics are studied with the goal of designing electronic systems for the space community. This paper describes the flexibility of the facility and its capabilities for testing the bombardment of electronics by heavy ions, light ions, and neutrons. Experimental capabilities for the generation of neutron beams from deuteron breakups and radiationmore » testing of carbon nanotube field effect transistor will be discussed.« less

Charge collection and SEU mechanisms

NASA Astrophysics Data System (ADS)

Musseau, O.

1994-01-01

In the interaction of cosmic ions with microelectronic devices a dense electron-hole plasma is created along the ion track. Carriers are separated and transported by the electric field and under the action of the concentration gradient. The subsequent collection of these carriers induces a transient current at some electrical node of the device. This "ionocurrent" (single ion induced current) acts as any electrical perturbation in the device, propagating in the circuit and inducing failures. In bistable systems (registers, memories) the stored data can be upset. In clocked devices (microprocessors) the parasitic perturbation may propagate through the device to the outputs. This type of failure only effects the information, and do not degrade the functionally of the device. The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Due to the parasitic elements, coupling effects are observed. Geometrical effects, in densely packed structures, results in multiple errors. Electronic couplings are due to the carriers in excess, acting as minority carriers, that trigger parasitic bipolar transistors. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are finally discussed.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

PubMed

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Alpha particle-induced soft errors in microelectronic devices. I

NASA Astrophysics Data System (ADS)

Redman, D. J.; Sega, R. M.; Joseph, R.

1980-03-01

The article provides a tutorial review and trend assessment of the problem of alpha particle-induced soft errors in VLSI memories. Attention is given to an analysis of the design evolution of modern ICs, and the characteristics of alpha particles and their origin in IC packaging are reviewed. Finally, the process of an alpha particle penetrating an IC is examined.

Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

PubMed

Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

2013-09-01

Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Center for High-Frequency Microelectronics

DTIC Science & Technology

1992-08-31

34 IEEE Transactions on Electron Devices, 38, No. 6, pp. 1324-1333, June 1991. 185. C. C. Chen, R. K. Mains and G. I. Haddad, " High - Power Generation in...Weiss, J. Hu and W.-P. Hong, "Electronic 0 Properties of Power High Electron Mobility Transistors," Conference on Ballistic Electrons for Transistors...method at higher frequencies than previously believed. - Calculations of high - power generation modes in Si IMPATT devices in the 100-200 GHz range have

Synthetic thermoelectric materials comprising phononic crystals

DOEpatents

El-Kady, Ihab F; Olsson, Roy H; Hopkins, Patrick; Reinke, Charles; Kim, Bongsang

2013-08-13

Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

Cytotoxicity and mitogenicity assays with real-time and label-free monitoring of human granulosa cells with an impedance-based signal processing technology intergrating micro-electronics and cell biology.

PubMed

Oktem, Ozgur; Bildik, Gamze; Senbabaoglu, Filiz; Lack, Nathan A; Akin, Nazli; Yakar, Feridun; Urman, Defne; Guzel, Yilmaz; Balaban, Basak; Iwase, Akira; Urman, Bulent

2016-04-01

A recently developed technology (xCelligence) integrating micro-electronics and cell biology allows real-time, uninterrupted and quantitative analysis of cell proliferation, viability and cytotoxicity by measuring the electrical impedance of the cell population in the wells without using any labeling agent. In this study we investigated if this system is a suitable model to analyze the effects of mitogenic (FSH) and cytotoxic (chemotherapy) agents with different toxicity profiles on human granulosa cells in comparison to conventional methods of assessing cell viability, DNA damage, apoptosis and steroidogenesis. The system generated the real-time growth curves of the cells, and determined their doubling times, mean cell indices and generated dose-response curves after exposure to cytotoxic and mitogenic stimuli. It accurately predicted the gonadotoxicity of the drugs and distinguished less toxic agents (5-FU and paclitaxel) from more toxic ones (cisplatin and cyclophosphamide). This platform can be a useful tool for specific end-point assays in reproductive toxicology. Copyright © 2015 Elsevier Inc. All rights reserved.

Goals, achievements of microelectronics program

NASA Astrophysics Data System (ADS)

Schronk, L.

1985-05-01

Besides reviewing the objectives of the government's microelectronics program, the Microelectronics Enterprise, the production of metal oxide semiconductors and bipolar integrated-circuit chips, specific research and development results to date, and the plans for future activity are discussed. Marketing and domestic demand are discussed.

The Legacy of the Microelectronics Education Programme.

ERIC Educational Resources Information Center

Thorne, Michael

1987-01-01

Describes the Microelectronics Education Programme (MEP), a plan developed to help British secondary school students learn about microcomputers and the role of technology in society, and its successor, the Microelectronics Support Unit (MESU). Highlights include curriculum development, teacher training, computer assisted instruction and the…

Educational Implications of Microelectronics and Microprocessors.

ERIC Educational Resources Information Center

Harris, N. D. C., Ed.

This conference report explores microelectronic technology, its effect on educational methods and objectives, and its implications for educator responsibilities. Two main areas were considered: the significance of the likely impact of the large scale introduction of microprocessors and microelectronics on commercial and industrial processes, the…

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

A Survey of Current Trends in Master's Programs in Microelectronics

ERIC Educational Resources Information Center

Bozanic, Mladen; Sinha, Saurabh

2018-01-01

Contribution: This paper brings forward a paradigm shift in microelectronic and nanoelectronic engineering education. Background: An increasing number of universities are offering graduate-level electrical engineering degree programs with multi-disciplinary Master's-level specialization in microelectronics or nanoelectronics. The paradigm shift…

Microelectronics in Education

ERIC Educational Resources Information Center

Orton, Richard J. J.

2011-01-01

The history and meaning of the term "microelectronics" is reviewed, followed by a discussion of the key inventions of the Intel microprocessor in 1971 and the Texas Instruments electronic pocket calculator in 1975. The six characteristic features of microelectronic components are then defined. The UK prime minister Jim Callaghan's…

First-principles investigations of proton generation in α-quartz

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Song, Yu; Zuo, Xu

2018-03-01

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in α-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen (H2) is present, the proton generation can be enhanced by cracking the H2 molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly-hydrogenated defects. In particular, a fully passivated {E}2^{\\prime } center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices. Project supported by the Science Challenge Project, China (Grant No. TZ2016003-1-105), CAEP Microsystem and THz Science and Technology Foundation, China (Grant No. CAEPMT201501), the National Natural Science Foundation China (Grant No. NSFC 11404300), and the National Basic Research Program of China (Grant No. 2011CB606405).

Microelectronics and Special Education. CET/MEP Information Sheet.

ERIC Educational Resources Information Center

Council for Educational Technology, London (England).

Used as an additional aid by the teacher, microelectronics can assist mentally and physically handicapped children to meet educational objectives that have been specifically agreed upon for the individual child. Microelectronics can help deaf children develop speech production, communication skills, and grammar and sentence construction;…

Microelectronics and Music Education.

ERIC Educational Resources Information Center

Hofstetter, Fred T.

1979-01-01

This look at the impact of microelectronics on computer-assisted instruction (CAI) in music notes trends toward new applications and lower costs. Included are: a rationale for CAI in music, a list of sample programs, comparison of five microelectronic music systems, PLATO cost projections, and sources of further information. (SJL)

Microelectronics in the Curriculum--The Science Teacher's Contribution.

ERIC Educational Resources Information Center

Association for Science Education, Cambridge (England).

Rapid advances in microelectronics over the past few years have generally been beneficial, but they have also created some problems, and questions must be asked about the philosophy for including aspects of the new technology in the school curriculum. This statement, prepared by the Microelectronics and Science Education Subcommittee of the…

Glass-to-Metal Seal Quality.

DTIC Science & Technology

1982-05-01

SELECTION AND EVALUATION . . . . . . . . . . . . . . 2 2.2 MICROELECTRONIC PACKAGES AND THEIR QUALITY . . . * . . . . . . . . 5 2.3 EQUIPMENT...liquid penetrant testing for various microelectronic package hermeticity. I t I MATERIALS AND EQUIPMENT 2.1 DYE PENETRANT SELECTION AND EVALUATION...a commercial visible dye penetrant and a commercial fluorescent dye penetrant were selected as being suitable for the testing of microelectronic

Methodology of problem-based learning engineering and technology and of its implementation with modern computer resources

NASA Astrophysics Data System (ADS)

Lebedev, A. A.; Ivanova, E. G.; Komleva, V. A.; Klokov, N. M.; Komlev, A. A.

2017-01-01

The considered method of learning the basics of microelectronic circuits and systems amplifier enables one to understand electrical processes deeper, to understand the relationship between static and dynamic characteristics and, finally, bring the learning process to the cognitive process. The scheme of problem-based learning can be represented by the following sequence of procedures: the contradiction is perceived and revealed; the cognitive motivation is provided by creating a problematic situation (the mental state of the student), moving the desire to solve the problem, to raise the question "why?", the hypothesis is made; searches for solutions are implemented; the answer is looked for. Due to the complexity of architectural schemes in the work the modern methods of computer analysis and synthesis are considered in the work. Examples of engineering by students in the framework of students' scientific and research work of analog circuits with improved performance based on standard software and software developed at the Department of Microelectronics MEPhI.

Microelectronics bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1977-01-01

Microelectronic bioinstrumentation systems to be employed in the Cardiovascular Deconditioning Program were developed. Implantable telemetry systems for long-term monitoring of animals on earth were designed to collect physiological data necessary for the understanding of the mechanisms of cardiovascular deconditioning. In-flight instrumentation systems, microelectronic instruments, and RF powering techniques for other life science experiments in the NASA program were studied.

Relevance of microelectronic education to industrial needs

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1977-01-01

The relevance of microelectronic education to industrial needs was evaluated, and four categories were surveyed: (1) facts and rules; (2) skills; (3) personality; and (4) deductive-inductive reasoning. Examples of specific items in each category are given to illustrate their meaning and it was indicated as to which items in each category are strongly impacted by microelectronics courses and laboratories.

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Spreading devices into a 2-D module layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koplow, Jeffrey P.; Gupta, Vipin P.; Nielson, Gregory N.

An apparatus, method, and system, the apparatus including a receiving member dimensioned to receive an array of microelectronic devices; and a linkage member coupled to the receiving member, the linkage member configured to move the receiving member in at least two dimensions so as to modify a spacing between the electronic devices within the array of microelectronic devices received by the receiving member. The method including coupling an array of microelectronic devices to an expansion assembly; and expanding the expansion assembly so as to expand the array of microelectronic devices in at least two directions within a single plane. Themore » system including a support member; an expansion assembly coupled to the support member, the expansion assembly having a plurality of receiving members configured to move in at least two dimensions within a single plane; and a plurality of microelectronic devices coupled to each of the plurality of receiving members.« less

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Trusted Defense Microelectronics: Future Access and Capabilities Are Uncertain

DTIC Science & Technology

2015-10-28

Board Task Force on High Performance Microchip Supply and documentation and discussions with industry and DOD officials in September and October...the defense and microelectronics industry . DOD’s review of this report deemed some of this information as sensitive but unclassified. What GAO...increased specialization and industry consolidation. • Once dominated by domestic sources, the supply chain for microelectronics manufacturing is a global one

Microelectronics: The Nature of Work, Skills and Training. An Analysis of Case Studies from Developed and Developing Countries. Training Discussion Paper No. 51.

ERIC Educational Resources Information Center

Acero, Liliana

Microelectronic technologies have had an impact on the nature of work in industry for both white-collar and blue-collar workers. Evidence from sector- and enterprise-level studies shows changes in skills and job content for blue-collar workers involved with numerically controlled machine tools, robots, and other microelectronics applications.…

Protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2002-01-01

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Temporary coatings for protection of microelectronic devices during packaging

DOEpatents

Peterson, Kenneth A.; Conley, William R.

2005-01-18

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

Modeling biology with HDL languages: a first step toward a genetic design automation tool inspired from microelectronics.

PubMed

Gendrault, Yves; Madec, Morgan; Lallement, Christophe; Haiech, Jacques

2014-04-01

Nowadays, synthetic biology is a hot research topic. Each day, progresses are made to improve the complexity of artificial biological functions in order to tend to complex biodevices and biosystems. Up to now, these systems are handmade by bioengineers, which require strong technical skills and leads to nonreusable development. Besides, scientific fields that share the same design approach, such as microelectronics, have already overcome several issues and designers succeed in building extremely complex systems with many evolved functions. On the other hand, in systems engineering and more specifically in microelectronics, the development of the domain has been promoted by both the improvement of technological processes and electronic design automation tools. The work presented in this paper paves the way for the adaptation of microelectronics design tools to synthetic biology. Considering the similarities and differences between the synthetic biology and microelectronics, the milestones of this adaptation are described. The first one concerns the modeling of biological mechanisms. To do so, a new formalism is proposed, based on an extension of the generalized Kirchhoff laws to biology. This way, a description of all biological mechanisms can be made with languages widely used in microelectronics. Our approach is therefore successfully validated on specific examples drawn from the literature.

A microelectronics approach for the ROSETTA surface science package

NASA Technical Reports Server (NTRS)

Sandau, Rainer (Editor); Alkalaj, Leon

1996-01-01

In relation to the Rosetta surface science package, the benefits of the application of advanced microelectronics packaging technologies and other output from the Mars environmental survey (MESUR) integrated microelectronics study are reported on. The surface science package will be designed to operate for tens of hours. Its limited mass and power consumption make necessary a highly integrated design with all the instruments and subunits operated from a centralized control and information management subsystem.

Electric Field Control of Magnetism Using BiFeO3-Based Heterostructures

DTIC Science & Technology

2014-04-22

dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations...speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By...and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

NASA Technical Reports Server (NTRS)

Thomas, Walter B., III; Lewis, Michael D.

1991-01-01

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea.

PubMed

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990 s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Based on claim data from the National Health Insurance (2008-2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Macro management of microelectronics in India in 1990s

NASA Astrophysics Data System (ADS)

Gupta, Parmod K.

1992-08-01

Development of microelectronics is taking place at a very fast rate all over the globe, including India. New technologies are introduced at very short intervals in order to capture the consumer market. It is essential that these technologies are managed properly at the macro level in order to bring the desired results. Microelectronics plays a very vital role in office automation for achieving cost effective results in a highly competitive environment. Introduction of various facilities like laser printers, photo copiers, dictaphone-selectronic boards, electronic telexes, teleconference rooms, telephone answering machines, computer, word processors, sensors, etc. have all revolutionized the industry. Keeping the above in view, the present and future status of microelectronics, with special emphasis on its role in office automation in India, are discussed in detail in this paper.

Center for Space Microelectronics Technology. 1993 Technical Report

NASA Technical Reports Server (NTRS)

1995-01-01

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

Insinuating electronics in the brain.

PubMed

Hughes, Mark A

2016-08-01

There is an expanding interface between electronic engineering and neurosurgery. Rapid advances in microelectronics and materials science, driven largely by consumer demand, are inspiring and accelerating development of a new generation of diagnostic, therapeutic, and prosthetic devices for implantation in the nervous system. This paper reviews some of the basic science underpinning their development and outlines some opportunities and challenges for their use in neurosurgery. Copyright © 2016 The Author. Published by Elsevier Ltd.. All rights reserved.

MIRAGE: developments in IRSP systems, RIIC design, emitter fabrication, and performance

NASA Astrophysics Data System (ADS)

Bryant, Paul; Oleson, Jim; James, Jay; McHugh, Steve; Lannon, John; Vellenga, David; Goodwin, Scott; Huffman, Alan; Solomon, Steve; Goldsmith, George C., II

2005-05-01

SBIR's family of MIRAGE infrared scene projection systems is undergoing significant growth and expansion. The first two lots of production IR emitters have completed fabrication at Microelectronics Center of North Carolina/Research and Development Institute (MCNC-RDI), and the next round(s) of emitter production has begun. These latest emitter arrays support programs such as Large Format Resistive Array (LFRA), Optimized Array for Space-based Infrared Simulation (OASIS), MIRAGE 1.5, and MIRAGE II. We present the latest performance data on emitters fabricated at MCNC-RDI, plus integrated system performance on recently completed IRSP systems. Teamed with FLIR Systems/Indigo Operations, SBIR and the Tri-Services IRSP Working Group have completed development of the CMOS Read-In Integrated Circuit (RIIC) portion of the Wide Format Resistive Array (WFRA) program-to extend LFRA performance to a 768 x 1536 "wide screen" projection configuration. WFRA RIIC architecture and performance is presented. Finally, we summarize development of the LFRA Digital Emitter Engine (DEE) and OASIS cryogenic package assemblies, the next-generation Command & Control Electronics (C&CE).

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

NASA Astrophysics Data System (ADS)

Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

2018-02-01

The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Reproductive Hazards Still Persist in the Microelectronics Industry: Increased Risk of Spontaneous Abortion and Menstrual Aberration among Female Workers in the Microelectronics Industry in South Korea

PubMed Central

Kim, Inah; Kim, Myoung-Hee; Lim, Sinye

2015-01-01

Objectives Despite the global expansion of supply chains and changes to the production process, few studies since the mid-1990s and 2000s have examined reproductive risks of the microelectronics industry; we examined the reproductive risks among female microelectronics workers in South Korea. Methods Based on claim data from the National Health Insurance (2008–2012), we estimated age-specific rates of spontaneous abortion (SAB) and menstrual aberration (MA) among women aged 20 to 39 years. We compared data between microelectronics workers and three different control groups: economically inactive women, the working population as a whole, and workers employed in the bank industry. For an effect measure, age-stratified relative risks (RRs) were estimated. Results Female workers in the microelectronics industry showed significantly higher risk for SAB and MA compared to control groups. The RRs for SAB with reference to economically inactive women, working population, and bank workers in their twenties were 1.57, 1.40, and 1.37, respectively, and the RRs for MA among females in their twenties were 1.54, 1.38, and 1.48, respectively. For women in their thirties, RRs for SAB were 1.58, 1.67, and 1.13, and those for MA were 1.25, 1.35, and 1.23 compared to the three control populations, respectively. All RRs were statistically significant at a level of 0.05, except for the SAB case comparison with bank workers in their thirties. Conclusions Despite technical innovations and health and safety measures, female workers in microelectronics industry in South Korea have high rates of SAB and MA, suggesting continued exposure to reproductive hazards. Further etiologic studies based on primary data collection and careful surveillance are required to confirm these results. PMID:25938673

Superconducting Microelectronics.

ERIC Educational Resources Information Center

Henry, Richard W.

1984-01-01

Discusses superconducting microelectronics based on the Josephson effect and its advantages over conventional integrated circuits in speed and sensitivity. Considers present uses in standards laboratories (voltage) and in measuring weak magnetic fields. Also considers future applications in superfast computer circuitry using Superconducting…

Integrated Chemical Fuel Microprocessor for Power Generation in MEMS Applications

DTIC Science & Technology

2005-07-01

unreacted fuels (ammonia and hydrocarbon) and carbon monoxide that could otherwise adversely affect hydrogen Proton Exchange Membrane ( PEM ) fuel cell ...High hydrogen purity is required in a variety of processes, from the microelectronics industry to PEM fuel cells . For portable-power applications, it...Geff Ffuel Heat Load Complexity Li-Ion Batteries 330 140 1.2 W Low Carnot Engines *7,878 13,750 10% 50% 395 690 10 W Low Fuel Cells : PEM /Hydride #2,382

Focused Ion Beam Fabrication of Microelectronic Structures

DTIC Science & Technology

1990-12-01

a simple function generator and allows fast ing, the pressure measured by the capacitance manometer is equal to the pressure at the sample surface...height above the sample ties. In practice this restricts features to simple rectangles or surface. J. Vac. . Tedhnol. B, VOL 7, No. 4, Jul/Aug IM...the sample up to 300 keV are available.(2) -3- This higher energy is often needed for implantation and for lithography in thick resist. Be++ ions at

Future Trends in MIcroelectronics: Up the Nano Creek

DTIC Science & Technology

2006-06-01

developed focal plane arrays (FPA)3𔃾 in addition to emphasizing future development in UV-to-far infrared multicolor FPA detectors 5𔄀 for next generation... detectors ", IEEE J. Quantum Electronics 35, 1685 (1999). 3. P. Bois, E. Costard, X. Marcadet, and E. Herniou, "Development of quantum well infrared ...photodetector array", Infrared Phys. Technol. 44, 369 (2003). 5. M. N. Abedin, T. F. Refaat, J. M. Zawodny, et al., "Multicolor focal plane array detector

Design, processing and testing of LSI arrays: Hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Ravetti, R. G.; Zulueta, P. J.

1979-01-01

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Evidence for adverse reproductive outcomes among women microelectronic assembly workers.

PubMed Central

Huel, G; Mergler, D; Bowler, R

1990-01-01

Microelectronics assembly entails complex processes where several potentially fetotoxic chemical compounds are used extensively. This study was undertaken to assess the potential adverse reproductive outcomes among former women workers in a microelectronics assembly plant in New Mexico with respect to a comparable population from the same geographical region and to examine the relation between these outcomes and employment history in this plant. After matching a pool of 143 former microelectronic female workers and 105 referents, 90 former microelectronic female worker-referent pairs were constituted (representing 302 and 324 pregnancies in former workers and referents respectively). The odds ratio (for pair matching design) of spontaneous abortion among women workers, before beginning to assemble microelectronic components, was 0.9 (chi 2 = 0.04; NS). After the beginning of employment this odds ratio became 5.6 (chi 2 = 9.8; p less than 1%). This estimated odds ratio decreased to 4.0, taking into account the increased risk for spontaneous abortion in previous pregnancies before employment (chi 2 = 5.4; p less than 5%). It was not possible to determine if this effect was reversible owing to the small number of pairs available after employment. The findings of this study corroborate the results of former studies that suggest a potential association between electronic manufacturing activity and risk of spontaneous abortion. Although the organic solvents were suspected of being the potential risk factor, this study was inconclusive from this point of view. Nevertheless, these investigations may provide some insight into reproductive outcomes among female workers exposed to solvents. PMID:2378817

Retinal Implants for Blind Patients

NASA Astrophysics Data System (ADS)

Rothermel, Albrecht

Recently, very promising results have been obtained in clinical trials with eye-prostheses for the blind. There is a chance that advances in surgical techniques, microelectronics design, and material science may lead to the first really useful applications of retinal implants in the near future. This chapter will focus on the actual status of subretinal surgery and implant technologies. Opportunities and limitations of the different technologies will be discussed in terms of patients benefit and technological challenges. Finally, a vision on how the devices may work and look like in the future will be given.

Center for Space Microelectronics Technology 1988-1989 technical report

NASA Technical Reports Server (NTRS)

Olsen, Peggy

1990-01-01

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1991-01-01

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

MOEMs-based new functionalities for future instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean; Hinglais, Emmanuel; Villenave, Michel

2017-11-01

Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. MOEMS devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. CNES has initiated a study with LAM and TAS for listing the new functions associated with several types of MEMS (programmable slits, programmable micro-diffraction gratings, micro-deformable mirrors). Instrumental applications are then derived and promising concepts are described.

Programmable wide field spectrograph for earth observation

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Lanzoni, Patrick; Liotard, Arnaud; Viard, Thierry; Costes, Vincent; Hébert, Philippe-Jean

2017-11-01

In Earth Observation, Universe Observation and Planet Exploration, scientific return of the instruments must be optimized in future missions. Micro-Opto-Electro-Mechanical Systems (MOEMS) could be key components in future generation of space instruments. These devices are based on the mature micro-electronics technology and in addition to their compactness, scalability, and specific task customization, they could generate new functions not available with current technologies. French and European space agencies, the Centre National d'Etudes Spatiales (CNES) and the European Space Agency (ESA) have initiated several studies with LAM and TAS for listing the new functions associated with several types of MEMS, and developing new ideas of instruments.

Space Radiation Environment Prediction for VLSI microelectronics devices onboard a LEO Satellite using OMERE-Trad Software

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

This tutorial/survey paper presents the assessment/determination of level of hazard/threat to emerging microelectronics devices in Low Earth Orbit (LEO) space radiation environment with perigee at 300 Km, apogee at 600Km altitude having different orbital inclinations to predict the reliability of onboard Bulk Built-In Current Sensor (BBICS) fabricated in 350nm technology node at OptMA Lab. UFMG Brazil. In this context, the various parameters for space radiation environment have been analyzed to characterize the ionizing radiation environment effects on proposed BBICS. The Space radiation environment has been modeled in the form of particles trapped in Van-Allen radiation belts(RBs), Energetic Solar Particles Events (ESPE) and Galactic Cosmic Rays (GCR) where as its potential effects on Device- Under-Test (DUT) has been predicted in terms of Total Ionizing Dose (TID), Single-Event Effects (SEE) and Displacement Damage Dose (DDD). Finally, the required mitigation techniques including necessary shielding requirements to avoid undesirable effects of radiation environment at device level has been estimated /determined with assumed standard thickness of Aluminum shielding. In order to evaluate space radiation environment and analyze energetic particles effects on BBICS, OMERE toolkit developed by TRAD was utilized.

Center for Space Microelectronics Technology

NASA Technical Reports Server (NTRS)

1992-01-01

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

Labour-Saving versus Work-Amplifying Effects of Micro-Electronics.

ERIC Educational Resources Information Center

Watanabe, Susumu

1986-01-01

This article argues that the labor-displacement effect of microelectronic machinery, especially numerically controlled machine tools and robots, has been exaggerated and that people tend to confuse the impact of intensified international competition with that of the new technology. (Author/CT)

A novel micromixer based on the alternating current-flow field effect transistor.

PubMed

Wu, Yupan; Ren, Yukun; Tao, Ye; Hou, Likai; Hu, Qingming; Jiang, Hongyuan

2016-12-20

Induced-charge electroosmosis (ICEO) phenomena have been attracting considerable attention as a means for pumping and mixing in microfluidic systems with the advantage of simple structures and low-energy consumption. We propose the first effort to exploit a fixed-potential ICEO flow around a floating electrode for microfluidic mixing. In analogy with the field effect transistor (FET) in microelectronics, the floating electrode act as a "gate" electrode for generating asymmetric ICEO flow and thus the device is called an AC-flow FET (AC-FFET). We take advantage of a tandem electrode configuration containing two biased center metal strips arranged in sequence at the bottom of the channel to generate asymmetric vortexes. The current device is manufactured on low-cost glass substrates via an easy and reliable process. Mixing experiments were conducted in the proposed device and the comparison between simulation and experimental results was also carried out, which indicates that the micromixer permits an efficient mixing effect. The mixing performance can be further enhanced by the application of a suitable phase difference between the driving electrode and the gate electrode or a square wave signal. Finally, we performed a critical analysis of the proposed micromixer in comparison with different mixer designs using a comparative mixing index (CMI). The novel methods put forward here offer a simple solution to mixing issues in microfluidic systems.

Affordable, Robust Ceramic Joining Technology (ARCJoint) Developed

NASA Technical Reports Server (NTRS)

Steele, Gynelle C.

2001-01-01

Affordable, Robust Ceramic Joining Technology (ARCJoint) is a method for joining high temperature- resistant ceramic pieces together, establishing joints that are strong, and allowing joining to be done in the field. This new way of joining allows complex shapes to be formed by joining together geometrically simple shapes. The joining technology at NASA is one of the enabling technologies for the application of silicon-carbide-based ceramic and composite components in demanding and high-temperature applications. The technology is being developed and tested for high-temperature propulsion parts for aerospace use. Commercially, it can be used for joining ceramic pieces used for high temperature applications in the power-generating and chemical industries, as well as in the microelectronics industry. This innovation could yield big payoffs for not only the power-generating industry but also the Silicon Valley chipmakers. This technology, which was developed at the NASA Glenn Research Center by Dr. Mrityunjay Singh, is a two-step process involving first using a paste to join together ceramic pieces and bonding them by heating the joint to 110 to 120 C for between 10 and 20 min. This makes the joint strong enough to be handled for the final joining. Then, a silicon-based substance is applied to the joint and heated to 1400 C for 10 to 15 min. The resulting joint is as strong as the original ceramic material and can withstand the same high temperatures.

Sub-Shot Noise Power Source for Microelectronics

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry V.; Yu, Nan; Mansour, Kamjou

2011-01-01

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Polysilicon for everything?

NASA Astrophysics Data System (ADS)

Ward, M. C. L.; McNie, Mark E.; Bunyan, Robert J.; King, David O.; Carline, Roger T.; Wilson, Rebecca; Gillham, J. P.

1998-09-01

We review some of the attractive attributes of microengineering and relate them to features of the highly successful silicon microelectronics industry. We highlight the need for cost effective functionality rather than ultimate performance as a driver for success and review key examples of polysilicon devices from this point of view. The effective exploitation of the data generated by the cost effective polysilicon sensors is also considered and we conclude that `non traditional' data analysis will need to be exploited if full use is to be made of polysilicon devices.

Microelectronics and Computers in Medicine.

ERIC Educational Resources Information Center

Meindl, James D.

1982-01-01

The use of microelectronics and computers in medicine is reviewed, focusing on medical research; medical data collection, storage, retrieval, and manipulation; medical decision making; computed tomography; ultrasonic imaging; role in clinical laboratories; and use as adjuncts for diagnostic tests, monitors of critically-ill patients, and with the…

Proceedings of the International Conference on Vacuum Microelectronics (2nd) Held in Bath England on 24-26 July 1989: Vacuum Microelectronics

DTIC Science & Technology

1989-07-26

resulting Laplacian matrix. This © 1989 lOP Publishing Ltd l • m m i m mIlia ItoI 110 Vacuum microelectronics 89 approach does not easily yield accurate...Schottky diodes p-InP-Ag A L Musatov, S L Filippov and VL Korotkikh 57-60 Stimulated cold-cathode emission from metal electrodes coated with Langmuir...quantum transport K L Jensen and FA Buot 141-144 Silicon cold cathodes based on PIN diodes P A M van der Heide, G G P van Gorkom, A M E Hoeberechts, A A

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

NASA Astrophysics Data System (ADS)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less

Comparative Advantages in Microelectronics,

DTIC Science & Technology

The initial point of departure for analyzing comparative advantages in microelectronics is to make certain explicit assumptions. First, technology...changes conditions but does not determine comparative advantages . Secondly, the entire industrial infrastructure is becoming increasingly abstract...that informatics will profoundly affect the productive infrastructure and the international division of labour.

76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-02-24

... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...

Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

PubMed Central

Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

2014-01-01

Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method. PMID:25133237

Government Microelectronics Assessment for Trust (GOMAT)

NASA Technical Reports Server (NTRS)

Berg, Melanie D.; LaBel, Kenneth A.

2018-01-01

NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

Reparable, high-density microelectronic module provides effective heat sink

NASA Technical Reports Server (NTRS)

Carlson, K. J.; Maytone, F. F.

1967-01-01

Reparable modular system is used for packaging microelectronic flat packs and miniature discrete components. This three-dimensional compartmented structure incorporates etched phosphor bronze sheets and frames with etched wire conductors. It provides an effective heat sink for electric power dissipation in the absence of convective cooling means.

Managing the Manpower Aspects of Applying Micro-Electronics Technology.

ERIC Educational Resources Information Center

Thornton, P.; Routledge, C.

1980-01-01

Outlines major effects that the application of micro-electronics devices in products/processes and in office systems will have on future manpower and skill requirements in manufacturing organizations. Identifies the type of problems these changes will pose for manpower managers. Provides general guidelines for the successful management of these…

Teaching and Learning in a Microelectronic Age.

ERIC Educational Resources Information Center

Shane, Harold G.

General background information on microtechnologies with implications for educators provides an introduction to this review of past and current developments in microelectronics and specific ways in which the microchip is permeating society, creating problems and opportunities both in the workplace and the home. Topics discussed in the first of two…

In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs

NASA Astrophysics Data System (ADS)

Lodola, L.; Batignani, G.; Benkechkache, M. A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Dalla Betta, G. F.; Fabris, L.; Forti, F.; Grassi, M.; Latreche, S.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, L.; Paoloni, E.; Ratti, L.; Re, V.; Rizzo, G.; Traversi, G.; Vacchi, C.; Verzellesi, G.; Xu, H.

2016-07-01

This work presents the design of an interleaved Successive Approximation Register (SAR) ADC, part of the readout channel for the PixFEL detector. The PixFEL project aims at substantially advancing the state-of-the-art in the field of 2D X-ray imaging for applications at the next generation Free Electron Laser (FEL) facilities. For this purpose, the collaboration is developing the fundamental microelectronic building blocks for the readout channel. This work focuses on the design of the ADC carried out in a 65 nm CMOS technology. To obtain a good tradeoff between power consumption, conversion speed and area occupation, an interleaved SAR ADC architecture was adopted.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teherani, James T., E-mail: j.teherani@columbia.edu; Agarwal, Sapan; Chern, Winston

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, wemore » show that Auger generation imposes a fundamental limit on ultimate TFET performance.« less

Research progress of Ge on insulator grown by rapid melting growth

NASA Astrophysics Data System (ADS)

Liu, Zhi; Wen, Juanjuan; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen

2018-06-01

Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor (CMOS) processes. Based on Ge, Ge on insulator (GOI) not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth (RMG) has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal–oxide–semiconductor field effect transistors (MOSFETs) and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Key Research and Development Program of China (No. 2017YFA0206404) and the National Natural Science Foundation of China (Nos. 61435013, 61534005, 61534004, 61604146).

Patterning layer-by-layer self-assembled multilayer by lithography and its applications to thin film devices

NASA Astrophysics Data System (ADS)

Hua, Feng

Nanoparticles are exciting materials because they exhibit unique electronic, catalytic, and optical properties. As a novel and promising nanobuilding block, it attracts considerable research efforts in its integration into a wide variety of thin film devices. Nanoparticles were adsorbed onto the substrate with layer-by-layer self-assembly which becomes of great interest due to its suitability in colloid particle assembly. Without extremely high temperatures and sophisticated equipment, molecularly organized films in an exactly pre-designed order can grow on almost all the substrates in nature. Two approaches generating spatially separated patterns comprised of nanoparticles are demonstrated, as well as two approaches patterning more than one type of nonoparticle on a silicon wafer. The structure of the thin film patterned by these approaches are analyzed and considered suitable to the thin film device. Finally, the combination of lithography and layer-by-layer (lbl) self-assembly is utilized to realize the microelectronic device with functional nonoparticles. The lbl self-assembly is the way to coat the nonoparticles and the lighography to pattern them. Based on the coating and patterning technique, a MOS-capacitor, a MOS field-effect-transistor and magnetic thin film cantilever are fabricated.

Application of analytical redundancy management to Shuttle crafts. [computerized simulation of microelectronic implementation

NASA Technical Reports Server (NTRS)

Montgomery, R. C.; Tabak, D.

1979-01-01

The study involves the bank of filters approach to analytical redundancy management since this is amenable to microelectronic implementation. Attention is given to a study of the UD factorized filter to determine if it gives more accurate estimates than the standard Kalman filter when data processing word size is reduced. It is reported that, as the word size is reduced, the effect of modeling error dominates the filter performance of the two filters. However, the UD filter is shown to maintain a slight advantage in tracking performance. It is concluded that because of the UD filter's stability in the serial processing mode, it remains the leading candidate for microelectronic implementation.

Designing a chevron unit for a microelectronic position-sensitive detector with two microchannel plates

NASA Astrophysics Data System (ADS)

Kosulya, A. V.; Verbitskii, V. G.

2017-09-01

The dependence of the transverse section of an electron beam on the distance between plates and on the accelerating potential difference is determined for a chevron unit of a microelectronic position-sensitive detector (MPSD) with two microchannel plates. The geometry of the MPSD chevron unit is designed and optimized.

Microelectronic Information Processing Systems: Computing Systems. Summary of Awards Fiscal Year 1994.

ERIC Educational Resources Information Center

National Science Foundation, Arlington, VA. Directorate for Computer and Information Science and Engineering.

The purpose of this summary of awards is to provide the scientific and engineering communities with a summary of the grants awarded in 1994 by the National Science Foundation's Division of Microelectronic Information Processing Systems. Similar areas of research are grouped together. Grantee institutions and principal investigators are identified…

Complex VLSI Feature Comparison for Commercial Microelectronics Verification

DTIC Science & Technology

2014-03-27

69 4.2.4 Circuit E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 4.3 Summary...used for high-performance consumer microelectronics. Volume is a significant factor in constraining the technology limit for defense circuits, but it...surveyed in a 2010 Department of Commerce report found counterfeit chips difficult to identify due to improved fabrication quality in overseas counterfeit

Center for space microelectronics technology

NASA Technical Reports Server (NTRS)

1993-01-01

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

The large scale microelectronics Computer-Aided Design and Test (CADAT) system

NASA Technical Reports Server (NTRS)

Gould, J. M.

1978-01-01

The CADAT system consists of a number of computer programs written in FORTRAN that provide the capability to simulate, lay out, analyze, and create the artwork for large scale microelectronics. The function of each software component of the system is described with references to specific documentation for each software component.

The Tao of Microelectronics

NASA Astrophysics Data System (ADS)

Zhang, Yumin

2014-12-01

Microelectronics is a challenging course to many undergraduate students and is often described as very messy. Before taking this course, all the students have learned circuit analysis, where basically all the problems can be solved by applying Kirchhoff's laws. In addition, most engineering students have also learned engineering mechanics: statics and dynamics, where Newton's laws and related principles can be applied in solving all the problems. However, microelectronics is not as clean as these courses. There are hundreds of equations for different circuits, and it is impossible to remember which equation should be applied to which circuit. One of the common pitfalls in learning this course is over-focusing at the equation level and ignoring the ideas (Tao) behind it. Unfortunately, these ideas are not summarized and emphasized in most microelectronics textbooks, though they cover various electronic circuits comprehensively. Therefore, most undergraduate students feel at a loss when they start to learn this topic. This book tries to illustrate the major ideas and the basic analysis techniques, so that students can derive the right equations easily when facing an electronic circuit.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Enabling laser applications in microelectronics manufacturing

NASA Astrophysics Data System (ADS)

Delmdahl, Ralph; Brune, Jan; Fechner, Burkhard; Senczuk, Rolf

2016-02-01

In this experimental study, we report on high-pulse-energy excimer laser drilling into high-performance build-up films which are pivotal in microelectronics manufacturing. Build-up materials ABF-GX13 from Ajinomoto as well as ZS-100 from Zeon Corporation are evaluated with respect to their viability for economic excimer laser-based micro-via formation. Excimer laser mask imaging projection at laser wavelengths of 193, 248 and 308 nm is employed to generate matrices of smaller micro-vias with different diameters and via pitches. High drilling quality is achievable for all excimer laser wavelengths with the fastest ablation rates measured in the case of 248 and 308 nm wavelengths. The presence of glass fillers in build-up films as in the ABF-GX13 material poses some limitations to the minimum achievable via diameter. However, surprisingly good drilling results are obtainable as long as the filler dimensions are well below the diameter of the micro-vias. Sidewall angles of vias are controllable by adjusting the laser energy density and pulse number. In this work, the structuring capabilities of excimer lasers in build-up films as to taper angle variations, attainable via diameters, edge-stop behavior and ablation rates will be elucidated.

An introduction to the BANNING design automation system for shuttle microelectronic hardware development

NASA Technical Reports Server (NTRS)

Mcgrady, W. J.

1979-01-01

The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment. BANNING is user-oriented and requires no programming experience to use effectively. It provides the user a simulation capability to aid in his circuit design and it eliminates most of the manual operations involved in the layout and artwork generation of integrated circuits. An example of its operation is given and some additional background reading is provided.

MOEMs devices for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Liotard, Arnaud; Lanzoni, Patrick; ElHadi, Kacem; Waldis, Severin; Noell, Wilfried; de Rooij, Nico; Conedera, Veronique; Fabre, Norbert; Muratet, Sylvaine; Camon, Henri

2017-11-01

Based on the micro-electronics fabrication process, Micro-Opto-Electro-Mechanical Systems (MOEMS) are under study in order to be integrated in next-generation astronomical instruments for ground-based and space telescopes. Their main advantages are their compactness, scalability, specific task customization using elementary building blocks, and remote control. At Laboratoire d'Astrophysique de Marseille, we are engaged since several years in the design, realization and characterization of programmable slit masks for multi-object spectroscopy and micro-deformable mirrors for wavefront correction. First prototypes have been developed and show results matching with the requirements.

MOEMs, key optical components for future astronomical instrumentation in space

NASA Astrophysics Data System (ADS)

Zamkotsian, Frédéric; Dohlen, Kjetil; Burgarella, Denis; Ferrari, Marc; Buat, Veronique

2017-11-01

Based on the micro-electronics fabrication process, MicroOpto-Electro-Mechanical Systems (MOEMS) are under study, in order to be integrated in next-generation astronomical instruments and telescopes, especially for space missions. The main advantages of micro-optical components are their compactness, scalability, specific task customization using elementary building blocks, and they allows remote control. As these systems are easily replicable, the price of the components is decreasing dramatically when their number is increasing. The two major applications of MOEMS are Multi-Object Spectroscopy masks and Deformable Mirror systems.

A Preliminary Survey of Department of Energy Microelectronics Capabilities Related to Department of Defense Needs

DTIC Science & Technology

1997-09-01

Leader Brian S. Cohen Michael B. Marks mom m fanC QUALITY DJBPECTED 1 This work was conducted under IDA’S independent research program. The...addition to novel resonator structures. This DTO supports F-22 radar and EW, GBR, GEN -X, GPS, CEC, B-6 MILSTAR, Scamp, Longbow, BCIS, SADARM...generator set for use in the Gen II and Hunter Sensor Suite ATDs in FY98; and demonstrate liquid-fueled fuel cell in FY99. B.1.13 Power Control and

All-fiber pyroelectric nanogenerator

NASA Astrophysics Data System (ADS)

Ghosh, Sujoy Kumar; Xie, Mengying; Bowen, Christopher Rhys; Mandal, Dipankar

2018-04-01

An all-fiber pyroelectric nanogenerator (PyNG) is fabricated where both the active pyroelectric component and the electrodes were composed of fiber. The pyroelectric component was made with randomly organized electrospun PVDF nano-fibers possessing ferroelectric β- and γ-phases. The PyNG possess higher level of sensitivity which can detect very low level of temperature fluctuation, as, low as, 2 K. In addition, the thermal energy harvesting ability of the PyNG under several temperature variations and cycling frequencies paves the way for next generation thermal sensor and self-powered flexible micro-electronics.

Laser Scanner Tests For Single-Event Upsets

NASA Technical Reports Server (NTRS)

Kim, Quiesup; Soli, George A.; Schwartz, Harvey R.

1992-01-01

Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.

Assessing Advanced High School and Undergraduate Students' Thinking Skills: The Chemistry--From the Nanoscale to Microelectronics Module

ERIC Educational Resources Information Center

Dori, Yehudit Judy; Dangur, Vered; Avargil, Shirly; Peskin, Uri

2014-01-01

Chemistry students in Israel have two options for studying chemistry: basic or honors (advanced placement). For instruction in high school honors chemistry courses, we developed a module focusing on abstract topics in quantum mechanics: Chemistry--From the Nanoscale to Microelectronics. The module adopts a visual-conceptual approach, which…

Microelectronics in F. E.: Some Personal Perceptions. An Occasional Paper.

ERIC Educational Resources Information Center

Dean, K. J.

The recent microelectronics developments are having, and will continue to have, a sharp impact on various industries in Great Britain, and thus on the capacity of the Further Education System to produce qualified graduates. To maintain a high quality of education, instructors must learn of these new developments and teach them to their vocational…

Reliability Considerations for Ultra- Low Power Space Applications

NASA Technical Reports Server (NTRS)

White, Mark; Johnston, Allan

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub- micron region and ULP devices are sought after. Technology trends, ULP microelectronics, scaling and performance tradeoffs, reliability considerations, and spacecraft environments will be presented from a ULP perspective for space applications.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Data Acquisition and Mass Storage

NASA Astrophysics Data System (ADS)

Vande Vyvre, P.

2004-08-01

The experiments performed at supercolliders will constitute a new challenge in several disciplines of High Energy Physics and Information Technology. This will definitely be the case for data acquisition and mass storage. The microelectronics, communication, and computing industries are maintaining an exponential increase of the performance of their products. The market of commodity products remains the largest and the most competitive market of technology products. This constitutes a strong incentive to use these commodity products extensively as components to build the data acquisition and computing infrastructures of the future generation of experiments. The present generation of experiments in Europe and in the US already constitutes an important step in this direction. The experience acquired in the design and the construction of the present experiments has to be complemented by a large R&D effort executed with good awareness of industry developments. The future experiments will also be expected to follow major trends of our present world: deliver physics results faster and become more and more visible and accessible. The present evolution of the technologies and the burgeoning of GRID projects indicate that these trends will be made possible. This paper includes a brief overview of the technologies currently used for the different tasks of the experimental data chain: data acquisition, selection, storage, processing, and analysis. The major trends of the computing and networking technologies are then indicated with particular attention paid to their influence on the future experiments. Finally, the vision of future data acquisition and processing systems and their promise for future supercolliders is presented.

Uses of ceramics in microelectronics: A survey

NASA Technical Reports Server (NTRS)

Bratschun, W. R.; Mountvala, A. J.; Pincus, A. G.

1971-01-01

The properties and behavior of ceramic materials used in components for electronic circuitry are examined to appraise the present and future directions for microelectronics, and to suggest further product development, and how innovations may be useful in other technologies. Ceramic and glass insulators, resistors, capacitors, and the use of ceramics and glasses in microcircuitry are discussed along with technology transfer to nonaerospace uses.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

DOE PAGES

Carlton, Holly D.; Elmer, John W.; Li, Yan; ...

2016-04-13

For this study synchrotron radiation micro-­tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron’s high flux and brightness the sample was imaged in just 3 minutes with an 8.7 μm spatial resolution.

Investigation of “benign” ionic content in epoxy that induces microelectronic device failure

Treesearch

Gregory T. Schueneman; Jeffery Kingsbury; Edmund Klinkerch

2011-01-01

Microelectronics and the devices dependent upon them have the extremely challenging requirements of becoming more capable and less expensive every year. This drives the industry to pack more functions into an ever smaller footprint until the next technological revolution. Adding to this situation is the removal of lead from the bill of materials followed closely by...

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

PubMed

Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

2015-11-01

Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group. Copyright © 2015 Elsevier B.V. All rights reserved.

Artificial Retina Project: Final Report for CRADA ORNL 01-0625

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenbaum, E; Little, J

The U.S. Department of Energy’s Artificial Retina Project is a collaborative, multi-institutional effort to develop an implantable microelectronic retinal prosthesis that restores useful vision to people blinded by retinal diseases. The ultimate goal of the project is to restore reading ability, facial recognition, and unaided mobility in people with retinitis pigmentosa and age-related macular degeneration. The project taps into the unique research technologies and resources developed at DOE national laboratories to surmount the many technical challenges involved with developing a safe, effective, and durable product. The research team includes six DOE national laboratories, four universities, and private industry.

Microelectronics Reliability

DTIC Science & Technology

2017-01-17

2016-0155 Kirtland AFB, NM 87117-5776 9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR’S ACRONYM(S) AFRL /RVSW 11...22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSW/Clay Mayberry 1 cy Approved for... AFRL -RV-PS- AFRL -RV-PS- TR-2016-0155 TR-2016-0155 MICROELECTRONICS RELIABILITY Clay Mayberry and Joseph Bernstein 17 Jan 2017 Interim Report

Microelectronic bioinstrumentation system

NASA Technical Reports Server (NTRS)

Ko, W. H.; Yon, E. T.; Rodriguez, R. J.

1974-01-01

The progess made from April 1973 to June 1974 on a microelectronics bioinstrumentation system is reported and includes data for the following three individual projects: (1) a radio frequency powered implant telemetry system; (2) an ingestible temperature telemeter; and (3) development of pO2 and pH sensors. Proposed activities for continuation of the research for the period September 1, 1974 to August 31, 1975 are also discussed.

Radiofrequency and microwave radiation in the microelectronics industry.

PubMed

Cohen, R

1986-01-01

The microscopic precision required to produce minute integrated circuits is dependent on several processes utilizing radiofrequency and microwave radiation. This article provides a review of radiofrequency and microwave exposures in microelectronics and of the physical and biologic properties of these types of radiation; summarizes the existing, relevant medical literature; and provides the clinician with guidelines for diagnosis and treatment of excessive exposures to microwave and radiofrequency radiation.

Using federal technology policy to strength the US microelectronics industry

NASA Astrophysics Data System (ADS)

Gover, J. E.; Gwyn, C. W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan's government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for and often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.

Using federal technology policy to strength the US microelectronics industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gover, J.E.; Gwyn, C.W.

1994-07-01

A review of US and Japanese experiences with using microelectronics consortia as a tool for strengthening their respective industries reveals major differences. Japan has established catch-up consortia with focused goals. These consortia have a finite life targeted from the beginning, and emphasis is on work that supports or leads to product and process-improvement-driven commercialization. Japan`s government has played a key role in facilitating the development of consortia and has used consortia promote domestic competition. US consortia, on the other hand, have often emphasized long-range research with considerably less focus than those in Japan. The US consortia have searched for andmore » often made revolutionary technology advancements. However, technology transfer to their members has been difficult. Only SEMATECH has assisted its members with continuous improvements, compressing product cycles, establishing relationships, and strengthening core competencies. The US government has not been a catalyst nor provided leadership in consortia creation and operation. We propose that in order to regain world leadership in areas where US companies lag foreign competition, the US should create industry-wide, horizontal-vertical, catch-up consortia or continue existing consortia in the six areas where the US lags behind Japan -- optoelectronics, displays, memories, materials, packaging, and manufacturing equipment. In addition, we recommend that consortia be established for special government microelectronics and microelectronics research integration and application. We advocate that these consortia be managed by an industry-led Microelectronics Alliance, whose establishment would be coordinated by the Department of Commerce. We further recommend that the Semiconductor Research Corporation, the National Science Foundation Engineering Research Centers, and relevant elements of other federal programs be integrated into this consortia complex.« less

Microsensor research

NASA Astrophysics Data System (ADS)

Hughes, R. C.; Drebing, C. G.

1990-04-01

The technology that led to very large scale integrated circuits on silicon chips also provides a basis for new microsensors that are small, inexpensive, low power, rugged, and reliable. Two examples of microsensors Sandia is developing that take advantage of this technology are the microelectronic chemical sensor array and the radiation sensing field effect transistor (RADFET). Increasingly, the technology of chemical sensing needs new microsensor concepts. Applications in this area include environmental monitoring, criminal investigations, and state-of-health monitoring, both for equipment and living things. Chemical microsensors can satisfy sensing needs in the industrial, consumer, aerospace, and defense sectors. The microelectronic chemical-sensor array may address some of these applications. We have fabricated six separate chemical gas sensing areas on the microelectronic chemical sensor array. By using different catalytic metals on the gate areas of the diodes, we can selectively sense several gases.

Applicability of LET to single events in microelectronic structures

NASA Astrophysics Data System (ADS)

Xapsos, Michael A.

1992-12-01

LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

A New Method for the Fast Analysis of Trihalomethanes in Tap and Recycled Waters Using Headspace Gas Chromatography with Micro-Electron Capture Detection.

PubMed

Alexandrou, Lydon D; Meehan, Barry J; Morrison, Paul D; Jones, Oliver A H

2017-05-15

Chemical disinfection of water supplies brings significant public health benefits by reducing microbial contamination. The process can however, result in the formation of toxic compounds through interactions between disinfectants and organic material in the source water. These new compounds are termed disinfection by-products (DBPs). The most common are the trihalomethanes (THMs) such as trichloromethane (chloroform), dichlorobromomethane, chlorodibromomethane and tribromomethane (bromoform); these are commonly reported as a single value for total trihalomethanes (TTHMs). Analysis of DBPs is commonly performed via time- and solvent-intensive sample preparation techniques such as liquid-liquid and solid phase extraction. In this study, a method using headspace gas chromatography with micro-electron capture detection was developed and applied for the analysis of THMs in drinking and recycled waters from across Melbourne (Victoria, Australia). The method allowed almost complete removal of the sample preparation step whilst maintaining trace level detection limits (>1 ppb). All drinking water samples had TTHM concentrations below the Australian regulatory limit of 250 µg/L but some were above the U.S. EPA limit of 60 µg/L. The highest TTHM concentration was 67.2 µg/L and lowest 22.9 µg/L. For recycled water, samples taken directly from treatment plants held significantly higher concentrations (153.2 µg/L TTHM) compared to samples from final use locations (4.9-9.3 µg/L).

Marketing NASA Langley Polymeric Materials

NASA Technical Reports Server (NTRS)

Flynn, Diane M.

1995-01-01

A marketing tool was created to expand the knowledge of LaRC developed polymeric materials, in order to facilitate the technology transfer process and increase technology commercialization awareness among a non-technical audience. The created brochure features four materials, LaRC-CP, LaRC-RP46, LaRC-SI, and LaRC-IA, and highlights their competitive strengths in potential commercial applications. Excellent opportunities exist in the $40 million per year microelectronics market and the $6 billion adhesives market. It is hoped that the created brochure will generate inquiries regarding the use of the above materials in markets such as these.

The Effect of 24c-Site (A) Cation Substitution on the Tetragonal-Cubic Phase Transition in Li7-xLa3-xAxZr2O12 Garnet-Based Ceramic Electrolyte

DTIC Science & Technology

2013-01-01

with Al [16,20]. In KrogereVink notation, the relationships for Ta and Nb substitution for Zr are as follows [20,22,23]: Ta$ Zr ¼ V0Li (3) Nb ...garnet phase. < CeO2 precipitation at grain boundaries increases grain boundary resistance . < Super-valent cation substitution likely stabilizes the...Introduction Li-ion batteries have played a vital role in the development of current generation mobile devices, microelectronics and electric vehicles [1]. Due

Developments of the studies on the polymerization under microgravity

NASA Astrophysics Data System (ADS)

Li, Ping; Yi, Zongchun

Microgravity has been recognized as a new and useful way of processing materials for pharmacology biology and microelectronic In microgravity there is no direction for gravity sensitive processes which take part in crystal growth convection sedimentation physical--chemical processes in biological objects The absent of gravity leads to the possibility of synthesis of new materials which cannot be prepared on Earth The perspective for possible biotechnological applications gave an impetus to a series of experiments on polymerization in space by NASA Rocket-Space Corporation RSC ENERGIYA the Institute of Bioorganic Chemistry Uzbekistan and so on The influence of microgravity on polymerization is based on the exclusion of convection and sedimentation processes in curing polymer Under microgravity condition a frontal polymerization process and creation of high homogeneous polyacrilamide gel were observed 1 Thus a much better resolution result of proteins by electrophoresis on orbital PAG matrices was obtained than that on terrestrial PAG matrices A deeper understanding of conditions responsible for generation of physical properties of PAG synthesized on the Earth was a strong motivation for seeking gravity-sensitive mechanisms of polymerization The polymerization under microgravity can potentially applied on functional polymer The conductive polymer such as polypyrrole is usually utilized especially for microelectronics The polymerization of pyrrole in microgravity conditions was made to prepare polymer particles having shapes

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Using FLUKA to Calculate Spacecraft: Single Event Environments: A Practical Approach

NASA Technical Reports Server (NTRS)

Koontz, Steve; Boeder, Paul; Reddell, Brandon

2009-01-01

The FLUKA nuclear transport and reaction code can be developed into a practical tool for calculation of spacecraft and planetary surface asset SEE and TID environments. Nuclear reactions and secondary particle shower effects can be estimated with acceptable accuracy both in-flight and in test. More detailed electronic device and/or spacecraft geometries than are reported here are possible using standard FLUKA geometry utilities. Spacecraft structure and shielding mass. Effects of high Z elements in microelectronic structure as reported previously. Median shielding mass in a generic slab or concentric sphere target geometry are at least approximately applicable to more complex spacecraft shapes. Need the spacecraft shielding mass distribution function applicable to the microelectronic system of interest. SEE environment effects can be calculated for a wide range of spacecraft and microelectronic materials with complete nuclear physics. Evaluate benefits of low Z shielding mass can be evaluated relative to aluminum. Evaluate effects of high Z elements as constituents of microelectronic devices. The principal limitation on the accuracy of the FLUKA based method reported here are found in the limited accuracy and incomplete character of affordable heavy ion test data. To support accurate rate estimates with any calculation method, the aspect ratio of the sensitive volume(s) and the dependence must be better characterized.

PREFACE: The Second Conference on Microelectronics, Microsystems and Nanotechnology

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.; Papanikolaou, Nikos; Tsamis, Christos

2005-01-01

The Second Conference on Microelectronics, Microsystems and Nanotechnology took place at the National Centre for Scientific Research `Demokritos', in Athens, Greece, between 14 and 17 November 2004. The conference was organized by the Institute of Microelectronics (IMEL) with the aim to bring together scientists and engineers working in the above exciting fields in an interactive forum. The conference included 45 oral presentations with 9 invited papers and was attended by 146 participants from 16 countries. The topics covered were nanotechnologies, quantum devices, sensors, micro- and nano-systems, semiconductor devices, C-MOS fabrication and characterization techniques, new materials, and IC design. Quantum devices and nanostructured materials attracted considerable attention. Both theoretical and experimental studies of metallic and semiconducting quantum systems were presented, with emphasis on their applications in electronics, optoelectronics, and nanocrystal memory devices. Another exciting topic was the recent developments in biocompatible lithographic processes for applications in biosensors. In particular novel processes for bio-friendly lithography, together with innovations in Si sensors for applications in medicine and food industry were presented. Recent developments and perspectives in CMOS technology towards the ultimate limit were also discussed. The conference covered issues and concepts of IC design with two invited talks on RF design and cryptography.The conference included presentations from several companies active in the field of microelectronics and systems in Greece.

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Sharma, S. P.; Rao, M. V. V. S.; Meyyappan, Meyya

2000-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Reduction of particle deposition on substrates using temperature gradient control

DOEpatents

Rader, Daniel J.; Dykhuizen, Ronald C.; Geller, Anthony S.

2000-01-01

A method of reducing particle deposition during the fabrication of microelectronic circuitry is presented. Reduction of particle deposition is accomplished by controlling the relative temperatures of various parts of the deposition system so that a large temperature gradient near the surface on which fabrication is taking place exists. This temperature gradient acts to repel particles from that surface, thereby producing cleaner surfaces, and thus obtaining higher yields from a given microelectronic fabrication process.

Electromagnetic Compatibility (EMC) in Microelectronics.

DTIC Science & Technology

1983-02-01

Fault Tree Analysis", System Saftey Symposium, June 8-9, 1965, Seattle: The Boeing Company . 12. Fussell, J.B., "Fault Tree Analysis-Concepts and...procedure for assessing EMC in microelectronics and for applying DD, 1473 EOiTO OP I, NOV6 IS OESOL.ETE UNCLASSIFIED SECURITY CLASSIFICATION OF THIS...CRITERIA 2.1 Background 2 2.2 The Probabilistic Nature of EMC 2 2.3 The Probabilistic Approach 5 2.4 The Compatibility Factor 6 3 APPLYING PROBABILISTIC

Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap

NASA Technical Reports Server (NTRS)

Ghaffarian, Reza

2015-01-01

The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. Due to the breadth of work being performed in the area of microelectronics packaging, this report presents only a number of key packaging technologies detailed in three industry roadmaps for conventional microelectronics and a more recently introduced roadmap for organic and printed electronics applications. The topics for each category were down-selected by reviewing the 2012 reports of the International Technology Roadmap for Semiconductor (ITRS), the 2013 roadmap reports of the International Electronics Manufacturing Initiative (iNEMI), the 2013 roadmap of association connecting electronics industry (IPC), the Organic Printed Electronics Association (OE-A). The report also summarizes the results of numerous articles and websites specifically discussing the trends in microelectronics packaging technologies.

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

Robot design for a vacuum environment

NASA Technical Reports Server (NTRS)

Belinski, S.; Trento, W.; Imani-Shikhabadi, R.; Hackwood, S.

1987-01-01

The cleanliness requirements for many processing and manufacturing tasks are becoming ever stricter, resulting in a greater interest in the vacuum environment. Researchers discuss the importance of this special environment, and the development of robots which are physically and functionally suited to vacuum processing tasks. Work is in progress at the Center for robotic Systems in Microelectronics (CRSM) to provide a robot for the manufacture of a revolutionary new gyroscope in high vacuum. The need for vacuum in this and other processes is discussed as well as the requirements for a vacuum-compatible robot. Finally, researchers present details on work done at the CRSM to modify an existing clean-room compatible robot for use at high vacuum.

Birth Defects in Infants Born to Employees of a Microelectronics and Business Machine Manufacturing Facility

PubMed Central

Silver, Sharon R.; Pinkerton, Lynne E.; Rocheleau, Carissa M.; Deddens, James A.; Michalski, Adrian M.; Van Zutphen, Alissa R.

2017-01-01

Background Concerns about solvent releases from a microelectronics/business machine manufacturing facility in upstate New York led to interest in the health of former workers, including this investigation of birth defects in children of male and female employees. Methods Children born 1983 to 2001 to facility employees were enumerated and matched to New York State’s Congenital Malformations Registry. Reported structural birth defects were compared with numbers expected from state rates (excluding New York City), generating standardized prevalence ratios (SPRs). Exposure assessors classified employees as ever/never potentially exposed at the facility to metals, chlorinated hydrocarbons, and other hydrocarbons during windows critical to organogenesis (female workers) or spermatogenesis (male workers). Among workers, adjusted prevalence ratios were generated to evaluate associations between potential exposures and specific birth defects. Results External comparisons for structural defects were at expectation for infants of male workers (SPR = 1.01; 95% confidence interval [CI], 0.77–1.29; n = 60) and lower for births to female workers (SPR = 0.84; 95% CI, 0.50–1.33; n = 18). Among full-term infants of male workers, ventricular septal defects (VSDs) were somewhat elevated compared with the general population (SPR = 1.58; 95% CI, 0.99–2.39; n = 22). Within the cohort, potential paternal metal exposure was associated with increased VSD risk (adjusted prevalence ratio = 2.70; 95% CI, = 1.09–6.67; n = 7). Conclusion While overall SPRs were near expectation, paternal exposure to metals (primarily lead) appeared to be associated with increased VSD risk in infants. Take-home of occupational exposures, nonoccupational exposures, and chance could not be ruled out as causes. Case numbers for many defects were small, limiting assessment of the role of occupational exposures. PMID:27224896

PREFACE: E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics

NASA Astrophysics Data System (ADS)

Wenger, Christian; Fompeyrine, Jean; Vallée, Christophe; Locquet, Jean-Pierre

2012-12-01

More than Moore explores a new area of Silicon based microelectronics, which reaches beyond the boundaries of conventional semiconductor applications. Creating new functionality to semiconductor circuits, More than Moore focuses on motivating new technological possibilities. In the past decades, the main stream of microelectronics progresses was mainly powered by Moore's law, with two focused development arenas, namely, IC miniaturization down to nano scale, and SoC based system integration. While the microelectronics community continues to invent new solutions around the world to keep Moore's law alive, there is increasing momentum for the development of 'More than Moore' technologies which are based on silicon technologies but do not simply scale with Moore's law. Typical examples are RF, Power/HV, Passives, Sensor/Actuator/MEMS or Bio-chips. The More than Moore strategy is driven by the increasing social needs for high level heterogeneous system integration including non-digital functions, the necessity to speed up innovative product creation and to broaden the product portfolio of wafer fabs, and the limiting cost and time factors of advanced SoC development. It is believed that More than Moore will add value to society on top of and beyond advanced CMOS with fast increasing marketing potentials. Important key challenges for the realization of the 'More than Moore' strategy are: perspective materials for future THz devices materials systems for embedded sensors and actuators perspective materials for epitaxial approaches material systems for embedded innovative memory technologies development of new materials with customized characteristics The Hot topics covered by the symposium M (More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics) at E-MRS 2012 Spring Meeting, 14-18 May 2012 have been: development of functional ceramics thin films New dielectric materials for advanced microelectronics bio- and CMOS compatible material systems piezoelectric films and nanostructures Atomic Layer Deposition (ALD) of oxides and nitrides characterization and metrology of very thin oxide layers We would like to take this opportunity to thank the Scientific Committee and Local Committee for bringing together a coherent and high quality Symposium at E-MRS 2012 Spring Meeting. Christian Wenger, Jean Fompeyrine, Christophe Vallée and Jean-Pierre Locquet Organizing Committee of Symposium M September 2012

SETA Support for the DARPA Microelectronics Technology Insertion Program of the Microelectronics Technology Office

DTIC Science & Technology

1992-08-17

Conclusions. Key personnel planned and administered the 193-nm lithography SBIR workshop on May 7, 1992 as well as planned the GaAs Insertion...converters can use Josephson junctions (JJ) to improve performance. Superconductive quantum interference devices (SQUIDs), such as JJs, are used to form...forward control of a lithography stepper. Mark Conner at Booz-Allen has copies of the charts. You should take a few minutes to review them. I asked Costos

A Low Cost Rad-Tolerant Standard Cell Library

NASA Technical Reports Server (NTRS)

Gambles, Jody W.; Maki, Gary K.

1997-01-01

This paper describes circuit design techniques developed at the NASA Institute of Advanced Microelectronics that have been shown to protect CMOS circuits from the deleterious effects of the natural space radiation environment. The IAuE is leading a program to incorporate these radiation-tolerance providing design techniques into a commercial standard cell library that will be used in conjunction with available Electronic Design Automation tools to produce space flight qualified microelectronics fabricated at modern commercial CMOS foundries.

Development and ESCC evaluation of a monolithic silicon phototransistor array for optical encoders

NASA Astrophysics Data System (ADS)

Bregoli, M.; Ceriani, S.; Erspan, M.; Collini, A.; Ficorella, F.; Giacomini, G.; Bellutti, P.; How, L. S.; Hernandez, S.; Lundmark, K.

2017-11-01

Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi's key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF).

Preliminary Flight Results of the Microelectronics and Photonics Test Bed: NASA DR1773 Fiber Optic Data Bus Experiment

NASA Technical Reports Server (NTRS)

Jackson, George L.; LaBel, Kenneth A.; Marshall, Cheryl; Barth, Janet; Seidleck, Christina; Marshall, Paul

1998-01-01

NASA Goddard Spare Flight Center's (GSFC) Dual Rate 1773 (DR1773) Experiment on the Microelectronic and Photonic Test Bed (MPTB) has provided valuable information on the performance of the AS 1773 fiber optic data bus in the space radiation environment. Correlation of preliminary experiment data to ground based radiation test results show the AS 1773 bus is employable in future spacecraft applications requiring radiation tolerant communication links.

Soft Lithography

NASA Astrophysics Data System (ADS)

Xia, Younan; Whitesides, George M.

1998-08-01

Soft lithography represents a non-photolithographic strategy based on selfassembly and replica molding for carrying out micro- and nanofabrication. It provides a convenient, effective, and low-cost method for the formation and manufacturing of micro- and nanostructures. In soft lithography, an elastomeric stamp with patterned relief structures on its surface is used to generate patterns and structures with feature sizes ranging from 30 nm to 100 mum. Five techniques have been demonstrated: microcontact printing (muCP), replica molding (REM), microtransfer molding (muTM), micromolding in capillaries (MIMIC), and solvent-assisted micromolding (SAMIM). In this chapter we discuss the procedures for these techniques and their applications in micro- and nanofabrication, surface chemistry, materials science, optics, MEMS, and microelectronics.

Nanostructured Materials Development for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Landi, B. J.; Elich, J. B.; Gennett, T.; Castro, S. L.; Bailey, Sheila G.; Hepp, Aloysius F.

2003-01-01

There have been many recent advances in the use of nanostructured materials for space power applications. In particular, the use of high purity single wall nanotubes holds promise for a variety of generation and storage devices including: thin film lithium ion batteries, microelectronic proton exchange membrane (PEM) fuel cells, polymeric thin film solar cells, and thermionic power supplies is presented. Semiconducting quantum dots alone and in conjunction with carbon nanotubes are also being investigated for possible use in high efficiency photovoltaic solar cells. This paper will review some of the work being done at RIT in conjunction with the NASA Glenn Research Center to utilize nanomaterials in space power devices.

Laser-machined piezoelectric cantilevers for mechanical energy harvesting.

PubMed

Kim, HyunUk; Bedekar, Vishwas; Islam, Rashed Adnan; Lee, Woo-Ho; Leo, Don; Priya, Shashank

2008-09-01

In this study, we report results on a piezoelectric- material-based mechanical energy-harvesting device that was fabricated by combining laser machining with microelectronics packaging technology. It was found that the laser-machining process did not have significant effect on the electrical properties of piezoelectric material. The fabricated device was tested in the low-frequency regime of 50 to 1000 Hz at constant force of 8 g (where g = 9.8 m/s(2)). The device was found to generate continuous power of 1.13 microW at 870 Hz across a 288.5 kOmega load with a power density of 301.3 microW/cm(3).

Delidding and resealing hybrid microelectronic packages

NASA Astrophysics Data System (ADS)

Luce, W. F.

1982-05-01

The objective of this single phase MM and T contract was to develop the manufacturing technology necessary for the precision removal (delidding) and replacement (resealing) of covers on hermetically sealed hybrid microelectronic packages. The equipment and processes developed provide a rework technique which does not degrade the reliability of the package of the enclosed circuitry. A qualification test was conducted on 88 functional hybrid packages, with excellent results. A petition will be filed, accompanied by this report, requesting Mil-M-38510 be amended to allow this rework method.

Electronics for better healthcare.

PubMed

Wolf, Bernhard; Herzog, Karolin

2013-06-01

Microelectronics and microsystem technology have changed our daily lives considerably in the past 50 years. Countless everyday objects contain microelectronic components. In healthcare up to the present, however, it has not been possible to make major alterations in introducing electronics and information technology that would lead to innovative improvements and greater transparency. This paper describes initial steps in diagnostics and oncological therapy including telematic healthcare systems which can, for example, assist patients with cardiovascular diseases and shows, through these areas, how electronics and microsystems technology can contribute to better healthcare.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of {{Ge}}_{1-{\\boldsymbol{x}}}{{Sn}}_{{\\boldsymbol{x}}} films on Si (100) and Si (111)

NASA Astrophysics Data System (ADS)

Miao, Yuan-Hao; Hu, Hui-Yong; Song, Jian-Jun; Xuan, Rong-Xi; Zhang, He-Ming

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 61474085 and 61704130), the Science Research Plan in Shaanxi Province, China (Grant No. 2016GY-085), the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905), and the Fundamental Research Funds for the Central Universities, China (Grant No. 61704130).

Displacement Damage Effects in Solar Cells: Mining Damage From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Walters, R. J.; Morton, T. L.; Messenger, S. R.

2004-01-01

The objective is to develop an improved space solar cell radiation response analysis capability and to produce a computer modeling tool which implements the analysis. This was accomplished through analysis of solar cell flight data taken on the Microelectronics and Photonics Test Bed experiment. This effort specifically addresses issues related to rapid technological change in the area of solar cells for space applications in order to enhance system performance, decrease risk, and reduce cost for future missions.

Microelectronic superconducting crossover and coil

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1994-03-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3]; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps and which can be opened to the atmosphere between depositions. 13 figures.

Nano-interconnection for microelectronics and polymers with benzo-triazole

NASA Technical Reports Server (NTRS)

Park, Yeonjoon; Choi, Sang H.; Noh, Hyunpil; Kuk, Young

2006-01-01

Benzo-Triazole (BTA) is considered as an important bridging material that can connect an organic polymer to the metal electrode on silicon wafers as a part of the microelectronics fabrication technology. We report a detailed process of surface induced 3-D polymerization of BTA on the Cu electrode material which was measured with the Ultraviolet Photoemission Spectroscopy (UPS), X-ray Photoemission Spectroscopy (XPS), and Scanning Tunneling Microscope (STM). The electric utilization of shield and chain polymerization of BTA on Cu surface is contemplated in this study.

Photovoltaic energy converter as a chipscale high efficiency power source for implanted active microelectronic devices.

PubMed

Hwang, N-J; Patterson, W R; Song, Y-K; Atay, T; Nurmikko, A V

2004-01-01

We report the development of a microscale photovoltaic energy converter which has been designed and implemented to deliver power to CMOS-based microelectronic chips. The design targets the delivery of voltages on the order of 3V with power levels in excess of 10 mW. The geometry of the prototype device, which has been fabricated and tested, is specifically designed for coupling to an optical fiber, to facilitate remote power delivery in implantable component environment.

A New Method for the Fast Analysis of Trihalomethanes in Tap and Recycled Waters Using Headspace Gas Chromatography with Micro-Electron Capture Detection

PubMed Central

Alexandrou, Lydon D.; Meehan, Barry J.; Morrison, Paul D.; Jones, Oliver A. H.

2017-01-01

Chemical disinfection of water supplies brings significant public health benefits by reducing microbial contamination. The process can however, result in the formation of toxic compounds through interactions between disinfectants and organic material in the source water. These new compounds are termed disinfection by-products (DBPs). The most common are the trihalomethanes (THMs) such as trichloromethane (chloroform), dichlorobromomethane, chlorodibromomethane and tribromomethane (bromoform); these are commonly reported as a single value for total trihalomethanes (TTHMs). Analysis of DBPs is commonly performed via time- and solvent-intensive sample preparation techniques such as liquid–liquid and solid phase extraction. In this study, a method using headspace gas chromatography with micro-electron capture detection was developed and applied for the analysis of THMs in drinking and recycled waters from across Melbourne (Victoria, Australia). The method allowed almost complete removal of the sample preparation step whilst maintaining trace level detection limits (>1 ppb). All drinking water samples had TTHM concentrations below the Australian regulatory limit of 250 µg/L but some were above the U.S. EPA limit of 60 µg/L. The highest TTHM concentration was 67.2 µg/L and lowest 22.9 µg/L. For recycled water, samples taken directly from treatment plants held significantly higher concentrations (153.2 µg/L TTHM) compared to samples from final use locations (4.9–9.3 µg/L). PMID:28505068

MEMS Using SOI Substrate

NASA Technical Reports Server (NTRS)

Tang, Tony K.

1999-01-01

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Wireless link and microelectronics design for retinal prostheses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Wentai

2012-02-29

This project focuses on delivering power and data to the artificial retinal implant inside the eye and the implant microstimulator electronics which delivers the current pulses to stimulate the retinal layer to elicit visual perception. Since the use of invasive means such as tethering wires to transmit power and data results in discomfort to the patients which could eventually cause infection due to the abrasion caused by the wire and contact of the internals of the eye to the external environment, a completely wireless approach is used to transfer both power and data. Power is required inside the eye formore » the microelectronic implant which uses a dual voltage supply scheme (positive and negative) to deliver biphasic (anodic and cathodic) current pulses. Data in the form of digital bits from the data transmitter external to the eye, carries information about the amplitude, phase width, interphase delay, stimulation sequence for each implant electrode. The data receiver unit decodes the digital stream and the microstimulator unit generates the appropriate current stimuli. Since the external unit consisting of the power transmitter can experience coupling a variation with the power receiver due to the patient’s movements, a closed loop approach is used which varies the transmitted power dynamically to automatically compensate for such movements. This report presents the salient features of this research activities and results.« less

Microsystem technology as a road from macro to nanoworld.

PubMed

Grabiec, Piotr; Domański, Krzysztof; Janus, Paweł; Zaborowski, Michał; Jaroszewicz, Bogdan

2005-04-01

Tremendous progress of microelectronic technology observed within last 40 years is closely related to even more remarkable progress of technological tools. It is important to note however, that these new tools may be used for fabrication of diverse multifunctional structures as well. Such devices, called MEMS (Micro-Electro-Mechanical-System) and MOEMS (Micro-Electro-Opto-Mechanical-System) integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application, with most interesting and prospective being bio-medical investigations. Development of these applications requires however cooperation of multidisciplinary team of specialists, covering broad range of physics, (bio) chemistry and electronics, not mentioning medical doctors and other medical specialists. Thus, dissemination, of knowledge about existing processing capabilities is of key importance. In this paper, examples of various applications of microelectronic technology for fabrication of Microsystems which may be used for medicine and chemistry, will be presented. Besides, information concerning a design and technology potential available in poland and new, emerging opportunities will be given.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

PubMed Central

Li, Jun; Zhao, Yan; Tan, Huei Shuan; Guo, Yunlong; Di, Chong-An; Yu, Gui; Liu, Yunqi; Lin, Ming; Lim, Suo Hon; Zhou, Yuhua; Su, Haibin; Ong, Beng S.

2012-01-01

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems. PMID:23082244

Fundamental understanding and rational design of high energy structural microbatteries

DOE PAGES

Wang, Yuxing; Li, Qiuyan; Cartmell, Samuel; ...

2017-11-21

We present that microbatteries play a critical role in determining the lifetime of downsized sensors, wearable devices, medical applications, and animal acoustic telemetry transmitters among others. More often, structural batteries are required from the perspective of aesthetics and space utilization, which is however rarely explored. Herein, we discuss the fundamental issues associated with the rational design of practically usable high energy microbatteries. The tubular shape of the cell further allows the flexible integration of microelectronics. A functioning acoustic micro-transmitter continuously powered by this tubular battery has been successfully demonstrated. Finally, multiple design features adopted to accommodate large mechanical stress duringmore » the rolling process are discussed providing new insights in designing the structural microbatteries for emerging technologies.« less

Method of forming a spacer for field emission flat panel displays

DOEpatents

Bernhardt, A.F.; Contolini, R.J.

1997-08-19

Spacers are disclosed for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate. 3 figs.

Fundamental understanding and rational design of high energy structural microbatteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuxing; Li, Qiuyan; Cartmell, Samuel

We present that microbatteries play a critical role in determining the lifetime of downsized sensors, wearable devices, medical applications, and animal acoustic telemetry transmitters among others. More often, structural batteries are required from the perspective of aesthetics and space utilization, which is however rarely explored. Herein, we discuss the fundamental issues associated with the rational design of practically usable high energy microbatteries. The tubular shape of the cell further allows the flexible integration of microelectronics. A functioning acoustic micro-transmitter continuously powered by this tubular battery has been successfully demonstrated. Finally, multiple design features adopted to accommodate large mechanical stress duringmore » the rolling process are discussed providing new insights in designing the structural microbatteries for emerging technologies.« less

Research development of thermal aberration in 193nm lithography exposure system

NASA Astrophysics Data System (ADS)

Wang, Yueqiang; Liu, Yong

2014-08-01

Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies.

Understanding Surface Adhesion in Nature: A Peeling Model.

PubMed

Gu, Zhen; Li, Siheng; Zhang, Feilong; Wang, Shutao

2016-07-01

Nature often exhibits various interesting and unique adhesive surfaces. The attempt to understand the natural adhesion phenomena can continuously guide the design of artificial adhesive surfaces by proposing simplified models of surface adhesion. Among those models, a peeling model can often effectively reflect the adhesive property between two surfaces during their attachment and detachment processes. In the context, this review summarizes the recent advances about the peeling model in understanding unique adhesive properties on natural and artificial surfaces. It mainly includes four parts: a brief introduction to natural surface adhesion, the theoretical basis and progress of the peeling model, application of the peeling model, and finally, conclusions. It is believed that this review is helpful to various fields, such as surface engineering, biomedicine, microelectronics, and so on.

Method of forming a spacer for field emission flat panel displays

DOEpatents

Bernhardt, Anthony F.; Contolini, Robert J.

1997-01-01

Spacers for applications such as field emission flat panel displays and vacuum microelectronics, and which involves the application of aerogel/xerogel technology to the formation of the spacer. In a preferred approach the method uses a mold and mold release agent wherein the gel precursor is a liquid which can be applied to the mold filling holes which expose the substrate (either the baseplate or the faceplate). A release agent is applied to the mold prior to precursor application to ease removal of the mold after formation of the dielectric spacer. The shrinkage of the gel during solvent extraction also improves mold removal. The final spacer material is a good dielectric, such as silica, secured to the substrate.

Emerging epidemic in a growing industry: cigarette smoking among female micro-electronics workers in Taiwan.

PubMed

Lin, Y-P; Yen, L-L; Pan, L-Y; Chang, P-J; Cheng, T-J

2005-03-01

To explore the emerging tobacco epidemic in female workers in the growing micro-electronics industry of Taiwan. Workers were surveyed regarding their smoking status, sociodemographics and work characteristics. In total, 1950 female employees in two large micro-electronics companies in Taiwan completed the survey. Approximately 9.3% of the female employees were occasional or daily smokers at the time of the survey. The prevalence of smoking was higher in those aged 16-19 years (20.9%), those not married (12.9%), those with a high school education or less (11.7%), those employed by Company A (11.7%), shift workers (14.3%), and those who had been in their present employment for 1 year or less (13.6%). Results of multivariate adjusted logistic regression indicated that younger age, lower level of education, shorter periods of employment with the company and shift working were the important factors in determining cigarette smoking among the study participants. The odds ratio of being a daily smoker was similar to that of being a current smoker. Marital status was the only significant variable when comparing former smokers with current smokers. Smoking prevalence in female workers in the two micro-electronics companies studied was much higher than previous reports have suggested about female smoking prevalence in Taiwan and China. We suggest that smoking is no longer a 'male problem' in Taiwan. Future smoking cessation and prevention programmes should target young working women as well as men.

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Fighting blindness with microelectronics.

PubMed

Zrenner, Eberhart

2013-11-06

There is no approved cure for blindness caused by degeneration of the photoreceptor cells of the retina. However, there has been encouraging progress with attempts to restore vision using microelectronic retinal implant devices. Yet many questions remain to be addressed. Where is the best location to implant multielectrode arrays? How can spatial and temporal resolution be improved? What are the best ways to ensure the safety and longevity of these devices? Will color vision be possible? This Perspective discusses the current state of the art of retinal implants and attempts to address some of the outstanding questions.

Space, Atmospheric, and Terrestrial Radiation Environments

NASA Technical Reports Server (NTRS)

Barth, Janet L.; Dyer, C. S.; Stassinopoulos, E. G.

2003-01-01

The progress on developing models of the radiation environment since the 1960s is reviewed with emphasis on models that can be applied to predicting the performance of microelectronics used in spacecraft and instruments. Space, atmospheric, and ground environments are included. It is shown that models must be adapted continually to account for increased understanding of the dynamics of the radiation environment and the changes in microelectronics technology. The IEEE Nuclear and Space Radiation Effects Conference is a vital forum to report model progress to the radiation effects research community.

High-speed high-efficiency 500-W cw CO2 laser hermetization of metal frames of microelectronics devices

NASA Astrophysics Data System (ADS)

Levin, Andrey V.

1996-04-01

High-speed, efficient method of laser surface treatment has been developed using (500 W) cw CO2 laser. The principal advantages of CO2 laser surface treatment in comparison with solid state lasers are the basis of the method. It has been affirmed that high efficiency of welding was a consequence of the fundamental properties of metal-IR-radiation (10,6 mkm) interaction. CO2 laser hermetization of metal frames of microelectronic devices is described as an example of the proposed method application.

Using SDI-12 with ST microelectronics MCU's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saari, Alexandra; Hinzey, Shawn Adrian; Frigo, Janette Rose

2015-09-03

ST Microelectronics microcontrollers and processors are readily available, capable and economical processors. Unfortunately they lack a broad user base like similar offerings from Texas Instrument, Atmel, or Microchip. All of these devices could be useful in economical devices for remote sensing applications used with environmental sensing. With the increased need for environmental studies, and limited budgets, flexibility in hardware is very important. To that end, and in an effort to increase open support of ST devices, I am sharing my teams' experience in interfacing a common environmental sensor communication protocol (SDI-12) with ST devices.

Crystallization Process of Superlattice-Like Sb/SiO2 Thin Films for Phase Change Memory Application

NASA Astrophysics Data System (ADS)

Zhu, Xiao-Qin; Zhang, Rui; Hu, Yi-Feng; Lai, Tian-Shu; Zhang, Jian-Hao; Zou, Hua; Song, Zhi-Tang

2018-05-01

Not Available Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, Frederick C.; Kingston, John J.; Clarke, John

1993-01-01

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

A software upgrade method for micro-electronics medical implants.

PubMed

Cao, Yang; Hao, Hongwei; Xue, Lin; Li, Luming; Ma, Bozhi

2006-01-01

A software upgrade method for micro-electronics medical implants is designed to enhance the devices' function or renew the software if there are some bugs found, the software updating or some memory units disabled. The implants needn't be replaced by operations if the faults can be corrected through reprogramming, which reduces the patients' pain and improves the safety effectively. This paper introduces the software upgrade method using in-application programming (IAP) and emphasizes how to insure the system, especially the implanted part's reliability and stability while upgrading.

A Eu/Tb-mixed MOF for luminescent high-temperature sensing

NASA Astrophysics Data System (ADS)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing; Yang, Yu; Qian, Guodong

2017-02-01

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu0.37Tb0.63-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313-473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis.

Microelectronic superconducting device with multi-layer contact

DOEpatents

Wellstood, F.C.; Kingston, J.J.; Clarke, J.

1993-10-26

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y. Simon; Deb, Satyen K.

1990-01-01

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.

Microfluidic redox battery.

PubMed

Lee, Jin Wook; Goulet, Marc-Antoni; Kjeang, Erik

2013-07-07

A miniaturized microfluidic battery is proposed, which is the first membraneless redox battery demonstrated to date. This unique concept capitalizes on dual-pass flow-through porous electrodes combined with stratified, co-laminar flow to generate electrical power on-chip. The fluidic design is symmetric to allow for both charging and discharging operations in forward, reverse, and recirculation modes. The proof-of-concept device fabricated using low-cost materials integrated in a microfluidic chip is shown to produce competitive power levels when operated on a vanadium redox electrolyte. A complete charge/discharge cycle is performed to demonstrate its operation as a rechargeable battery, which is an important step towards providing sustainable power to lab-on-a-chip and microelectronic applications.

Using the stereokinetic effect to convey depth - Computationally efficient depth-from-motion displays

NASA Technical Reports Server (NTRS)

Kaiser, Mary K.; Proffitt, Dennis R.

1992-01-01

Recent developments in microelectronics have encouraged the use of 3D data bases to create compelling volumetric renderings of graphical objects. However, even with the computational capabilities of current-generation graphical systems, real-time displays of such objects are difficult, particularly when dynamic spatial transformations are involved. In this paper we discuss a type of visual stimulus (the stereokinetic effect display) that is computationally far less complex than a true three-dimensional transformation but yields an equally compelling depth impression, often perceptually indiscriminable from the true spatial transformation. Several possible applications for this technique are discussed (e.g., animating contour maps and air traffic control displays so as to evoke accurate depth percepts).

Job stress models, depressive disorders and work performance of engineers in microelectronics industry.

PubMed

Chen, Sung-Wei; Wang, Po-Chuan; Hsin, Ping-Lung; Oates, Anthony; Sun, I-Wen; Liu, Shen-Ing

2011-01-01

Microelectronic engineers are considered valuable human capital contributing significantly toward economic development, but they may encounter stressful work conditions in the context of a globalized industry. The study aims at identifying risk factors of depressive disorders primarily based on job stress models, the Demand-Control-Support and Effort-Reward Imbalance models, and at evaluating whether depressive disorders impair work performance in microelectronics engineers in Taiwan. The case-control study was conducted among 678 microelectronics engineers, 452 controls and 226 cases with depressive disorders which were defined by a score 17 or more on the Beck Depression Inventory and a psychiatrist's diagnosis. The self-administered questionnaires included the Job Content Questionnaire, Effort-Reward Imbalance Questionnaire, demography, psychosocial factors, health behaviors and work performance. Hierarchical logistic regression was applied to identify risk factors of depressive disorders. Multivariate linear regressions were used to determine factors affecting work performance. By hierarchical logistic regression, risk factors of depressive disorders are high demands, low work social support, high effort/reward ratio and low frequency of physical exercise. Combining the two job stress models may have better predictive power for depressive disorders than adopting either model alone. Three multivariate linear regressions provide similar results indicating that depressive disorders are associated with impaired work performance in terms of absence, role limitation and social functioning limitation. The results may provide insight into the applicability of job stress models in a globalized high-tech industry considerably focused in non-Western countries, and the design of workplace preventive strategies for depressive disorders in Asian electronics engineering population.

Synthesis of tin, silver and their alloy nanoparticles for lead-free interconnect applications

NASA Astrophysics Data System (ADS)

Jiang, Hongjin

SnPb solders have long been used as interconnect materials in microelectronic packaging. Due to the health threat of lead to human beings, the use of lead-free interconnect materials is imperative. Three kinds of lead-free interconnect materials are being investigated, namely lead-free metal solders (SnAg, SnAgCu, etc.), electrically conductive adhesives (ECAs) and carbon nanotubes (CNTs). However, there are still limitations for the full utilization of these lead-free interconnect materials in the microelectronic packaging, such as higher melting point of lead-free metal solders, lower electrical conductivity of the ECAs and poor adhesion of CNTs to substrates. This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230°C. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging.

GeNeDA: An Open-Source Workflow for Design Automation of Gene Regulatory Networks Inspired from Microelectronics.

PubMed

Madec, Morgan; Pecheux, François; Gendrault, Yves; Rosati, Elise; Lallement, Christophe; Haiech, Jacques

2016-10-01

The topic of this article is the development of an open-source automated design framework for synthetic biology, specifically for the design of artificial gene regulatory networks based on a digital approach. In opposition to other tools, GeNeDA is an open-source online software based on existing tools used in microelectronics that have proven their efficiency over the last 30 years. The complete framework is composed of a computation core directly adapted from an Electronic Design Automation tool, input and output interfaces, a library of elementary parts that can be achieved with gene regulatory networks, and an interface with an electrical circuit simulator. Each of these modules is an extension of microelectronics tools and concepts: ODIN II, ABC, the Verilog language, SPICE simulator, and SystemC-AMS. GeNeDA is first validated on a benchmark of several combinatorial circuits. The results highlight the importance of the part library. Then, this framework is used for the design of a sequential circuit including a biological state machine.

Microelectronics Revolution And The Impact Of Automation In The New Industrialized Countries

NASA Astrophysics Data System (ADS)

Baranauskas, Vitor

1984-08-01

A brief review of some important historical points on the origin of the Factories and the Industrial Revolution is presented with emphasis in the social problems related to the automation of the human labor. Until the World War I, the social changes provoked by the Industrial Revolution caused one division of the World in developed and underdeveloped countries. After that period, the less developed nations began their industrialization mainly through the Multinationals Corporations (MC). These enterprises were very important to the production and exportation of utilities and manufactures in general, mainly in those products which required intensive and direct human labor. At present time, with the pervasiveness of microelectronics in the automation, this age seems to reaching an end because all continous processes in industry tend economicaly toward total automation. This fact will cause a retraction in long-term investments and, beyond massive unemployment, there is a tendency for these MC industries to return to their original countries. The most promising alternative to avoid these events, and perhaps the unique, is to incentive an autonomous development in areas of high technology, as for instance, the microelectronics itself.

Systematic Computation of Nonlinear Cellular and Molecular Dynamics with Low-Power CytoMimetic Circuits: A Simulation Study

PubMed Central

Papadimitriou, Konstantinos I.; Stan, Guy-Bart V.; Drakakis, Emmanuel M.

2013-01-01

This paper presents a novel method for the systematic implementation of low-power microelectronic circuits aimed at computing nonlinear cellular and molecular dynamics. The method proposed is based on the Nonlinear Bernoulli Cell Formalism (NBCF), an advanced mathematical framework stemming from the Bernoulli Cell Formalism (BCF) originally exploited for the modular synthesis and analysis of linear, time-invariant, high dynamic range, logarithmic filters. Our approach identifies and exploits the striking similarities existing between the NBCF and coupled nonlinear ordinary differential equations (ODEs) typically appearing in models of naturally encountered biochemical systems. The resulting continuous-time, continuous-value, low-power CytoMimetic electronic circuits succeed in simulating fast and with good accuracy cellular and molecular dynamics. The application of the method is illustrated by synthesising for the first time microelectronic CytoMimetic topologies which simulate successfully: 1) a nonlinear intracellular calcium oscillations model for several Hill coefficient values and 2) a gene-protein regulatory system model. The dynamic behaviours generated by the proposed CytoMimetic circuits are compared and found to be in very good agreement with their biological counterparts. The circuits exploit the exponential law codifying the low-power subthreshold operation regime and have been simulated with realistic parameters from a commercially available CMOS process. They occupy an area of a fraction of a square-millimetre, while consuming between 1 and 12 microwatts of power. Simulations of fabrication-related variability results are also presented. PMID:23393550

Standard cell-based implementation of a digital optoelectronic neural-network hardware.

PubMed

Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

2001-03-10

A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

Intermetallic compounds in 3D integrated circuits technology: a brief review

NASA Astrophysics Data System (ADS)

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-12-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Intermetallic compounds in 3D integrated circuits technology: a brief review.

PubMed

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-01-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Understanding Surface Adhesion in Nature: A Peeling Model

PubMed Central

Gu, Zhen; Li, Siheng; Zhang, Feilong

2016-01-01

Nature often exhibits various interesting and unique adhesive surfaces. The attempt to understand the natural adhesion phenomena can continuously guide the design of artificial adhesive surfaces by proposing simplified models of surface adhesion. Among those models, a peeling model can often effectively reflect the adhesive property between two surfaces during their attachment and detachment processes. In the context, this review summarizes the recent advances about the peeling model in understanding unique adhesive properties on natural and artificial surfaces. It mainly includes four parts: a brief introduction to natural surface adhesion, the theoretical basis and progress of the peeling model, application of the peeling model, and finally, conclusions. It is believed that this review is helpful to various fields, such as surface engineering, biomedicine, microelectronics, and so on. PMID:27812476

Proceedings of the Goddard Space Flight Center Workshop on Robotics for Commercial Microelectronic Processes in Space

NASA Technical Reports Server (NTRS)

1987-01-01

Potential applications of robots for cost effective commercial microelectronic processes in space were studied and the associated robotic requirements were defined. Potential space application areas include advanced materials processing, bulk crystal growth, and epitaxial thin film growth and related processes. All possible automation of these processes was considered, along with energy and environmental requirements. Aspects of robot capabilities considered include system intelligence, ROM requirements, kinematic and dynamic specifications, sensor design and configuration, flexibility and maintainability. Support elements discussed included facilities, logistics, ground support, launch and recovery, and management systems.

Hydrogen ion microlithography

DOEpatents

Tsuo, Y.S.; Deb, S.K.

1990-10-02

Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.

Microelectronic components and metallic oxide studies and applications

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1976-01-01

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

NASA Astrophysics Data System (ADS)

Kast, Matthew G.

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Organo-metallic elements for associative information processing

NASA Astrophysics Data System (ADS)

Potember, Richard S.; Poehler, Theodore O.

1989-01-01

In the three years of the program we have: (1) built and tested a 4 bit element matrix device for possible use in high density content-addressable memories systems; (2) established a test and evaluation laboratory to examine optical materials for nonlinear effects, saturable absorption, harmonic generation and photochromism; (3) successfully designed, constructed and operated a codeposition processing system that enables organic materials to be deposited on a variety of substrates to produce optical grade coatings and films. This system is also compatible with other traditional microelectronic techniques; (4) used the sol-gel process with colloidal AgTCNQ to fabricate high speed photochromic switches; (5) develop and applied for patent coverage to make VO2 optical switching materials via the sol-gel processing using vanadium (IV) alkoxide compounds.

Eye vision system using programmable micro-optics and micro-electronics

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.; Amin, M. Junaid; Riza, Mehdi N.

2014-02-01

Proposed is a novel eye vision system that combines the use of advanced micro-optic and microelectronic technologies that includes programmable micro-optic devices, pico-projectors, Radio Frequency (RF) and optical wireless communication and control links, energy harvesting and storage devices and remote wireless energy transfer capabilities. This portable light weight system can measure eye refractive powers, optimize light conditions for the eye under test, conduct color-blindness tests, and implement eye strain relief and eye muscle exercises via time sequenced imaging. Described is the basic design of the proposed system and its first stage system experimental results for vision spherical lens refractive error correction.

Configurations of high-frequency ultrasonics complex vibration systems for packaging in microelectronics.

PubMed

Tsujino, Jiromaru; Harada, Yoshiki; Ihara, Shigeru; Kasahara, Kohei; Shimizu, Masanori; Ueoka, Tetsugi

2004-04-01

Ultrasonic high-frequency complex vibrations are effective for various ultrasonic high-power applications. Three types of ultrasonic complex vibration system with a welding tip vibrating elliptical to circular locus for packaging in microelectronics were studied. The complex vibration sources are using (1) a longitudinal-torsional vibration converter with diagonal slits that is driven only by a longitudinal vibration source, (2) a complex transverse vibration rod with several stepped parts that is driven by two longitudinal vibration source crossed at a right angle and (3) a longitudinal vibration circular disk and three longitudinal transducers that are installed at the circumference of the disk.

European semiconductor industry: Markets, government programs

NASA Astrophysics Data System (ADS)

Scharf, A.

1983-01-01

The marketing of the semiconductor industry in Europe and especially microelectronics which is situated between the millstones of USA and Japan is discussed. The concerned enterprises and governments appear to lack the motivation for close cooperation using European resources, corresponding to the ideas of the contracts on which the common market is based. It is felt that microelectronics is promoted in individual countries under more national perspectives, and the enterprises are pursuing strictly their own interests in cooperating with predominantly American and Japanese partners. An insight into the European semiconductor scene, its markets, as well as assistance for promotion and establishment available in the individual countries is discussed.

Development of a hybrid microelectronics solid state relay for 2500 volts isolation and minus 120 C to 80 C thermal cycling range

NASA Technical Reports Server (NTRS)

Sater, B. L.; Riley, T. J.; Janssen, W.

1973-01-01

A hybrid microelectronics solid state relay was developed in a TO-116 package for the MINX project. The relay provides 2500 Vdc input to output isolation and operated from a MHTL logic signal to switch a load of 400 Vdc at 2 mA. The relay is designed to operate in space and survive 1000 thermal cycles of 120 C to 80 C. The use of X-rays for failure analysis in small hybrid circuits proved valuable and the applications of vacuum deposited Parylene as a dielectric coating proved extremely valuable.

Reliability and quality EEE parts issues

NASA Technical Reports Server (NTRS)

Barney, Dan; Feigenbaum, Irwin

1990-01-01

NASA policy and procedures are established which govern the selection, testing, and application of electrical, electronic, and electromechanical (EEE) parts. Recent advances in the state-of-the-art of electronic parts and associated technologies can significantly impact the electronic designs and reliability of NASA space transportation avionics. Significant issues that result from these advances are examined, including: recent advances in microelectronics technology (as applied to or considered for use in NASA projects); electron packaging technology advances (concurrent with, and as a result of, the development of the advanced microelectronic devices); availability of parts used in space avionics; and standardization and integration of parts activities between projects, centers, and contractors.

The MOS silicon gate technology and the first microprocessors

NASA Astrophysics Data System (ADS)

Faggin, F.

2015-12-01

Today we are so used to the enormous capabilities of microelectronics that it is hard to imagine what it might have been like in the early Sixties and Seventies when much of the technology we use today was being developed. This paper will first present a brief history of microelectronics and computers, taking us to the threshold of the inventions of the MOS silicon gate technology and the microprocessor. These two creations provided the basic technology that would allow only a few years later to merge microelectronics and computers into the first commercial monolithic computer. By the late Seventies, the first monolithic computer weighting less than one gram, occupying a volume of less than one cubic centimeter, dissipating less than one Watt, and selling for less than ten dollars, could perform more information processing than the UNIVAC I, the first commercial electronic computer introduced in 1951, made with 5200 vacuum tubes, dissipating 125kW, weighting 13 metric tons, occupying a room larger than 35m2, and selling for more than one million dollars per unit. The first-person story of the SGT and the early microprocessors will be told by the Italian-born physicist who led both projects.

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daghbouj, N.; Faculté des Sciences de Monastir, Université de Monastir, Monastir; Cherkashin, N., E-mail: nikolay.cherkashin@cemes.fr

2016-04-07

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed followingmore » each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.« less

The effect of fatigue and environment on the adhesion and delamination of thin polymer films

NASA Astrophysics Data System (ADS)

Snodgrass, Jeffrey Matthew

Polymers are increasingly used in the interconnect and packaging levels of microelectronic devices. Thus, adhesion of polymer films to their adjacent inorganic layers is critical to the manufacturability and reliability of microelectronic components. Weak interfacial adhesion can result in delamination, causing a loss of package hermeticity or the failure of electrical contacts. Recently, interface fracture mechanics techniques have been applied to the problem of thin film delamination and are now used to measure interface adhesion. These techniques allow for characterization of interface adhesion in terms of the critical strain energy release rate, GC, in units of J/m2. In this dissertation, studies are described that quantify the effects of fundamental parameters on the critical adhesion and resistance to subcritical (time-dependent) delamination of benzocyclobutene (BCB)/silica and epoxy underfill/polyimide interfaces. Results are presented detailing the action of small-molecule adhesion promoters on the critical interface adhesion energy of BCB/silica. Silane coupling agents with different functional end groups were used to increase chemical bonding at this interface in order to achieve optimized adhesion. Testing was performed at different mode mixities to evaluate the effect of loading mode on the polymer interface fracture. Subcritical debonding data were measured under two different loading conditions and results are presented in terms of the debond growth rate as a function of applied strain energy release rate. Monotonic loading was used to examine environment-assisted delamination processes, while fatigue loading was used to understand the effects of thermomechanical cycling. Debond growth rates over the range of 10-3 to 10-9 m/s were characterized under mode I and mixed-mode loading. Atomic force microscopy and X-ray photoelectron spectroscopy were used to characterize the fracture surfaces of these interfaces and to generate detailed information about the debond fracture path and mechanisms. The AFM and XPS results suggest that the failure mode of BCB/silica interfaces is cohesive in the BCB layer, in a region very close to the interface. Mechanical fatigue was found to considerably accelerate subcritical debond growth rates and decrease debond growth thresholds to as low as 25% of the critical adhesion energy. Fatigue loading produced fatigue striations on the BCB surface with a striation height of ˜1--2 nm and a spacing that was correlated with the debond growth rate. Finally, a model is presented for the mechanism of striation formation.

Intermetallic compounds in 3D integrated circuits technology: a brief review

PubMed Central

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-01-01

Abstract The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed. PMID:29057024

CVD diamond substrate for microelectronics. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burden, J.; Gat, R.

1996-11-01

Chemical Vapor Deposition (CVD) of diamond films has evolved dramatically in recent years, and commercial opportunities for diamond substrates in thermal management applications are promising. The objective of this technology transfer initiative (TTI) is for Applied Science and Technology, Inc. (ASTEX) and AlliedSignal Federal Manufacturing and Technologies (FM&T) to jointly develop and document the manufacturing processes and procedures required for the fabrication of multichip module circuits using CVD diamond substrates, with the major emphasis of the project concentrating on lapping/polishing prior to metallization. ASTEX would provide diamond films for the study, and FM&T would use its experience in lapping, polishing,more » and substrate metallization to perform secondary processing on the parts. The primary goal of the project was to establish manufacturing processes that lower the manufacturing cost sufficiently to enable broad commercialization of the technology.« less

Lab-on-a-chip with beta-poly(vinylidene fluoride) based acoustic microagitation.

PubMed

Cardoso, V F; Catarino, S O; Serrado Nunes, J; Rebouta, L; Rocha, J G; Lanceros-Méndez, S; Minas, G

2010-05-01

This paper reports a fully integrated disposable lab-on-a-chip with acoustic microagitation based on a piezoelectric ss-poly(vinylidene fluoride) (ss-PVDF) polymer. The device can be used for the measurement, by optical absorption spectroscopy, of biochemical parameters in physiological fluids. It comprises two dies: the fluidic die that contains the reaction chambers fabricated in SU-8 and the ss-PVDF polymer deposited underneath them; and the detection die that contains the photodetectors, its readout electronics, and the piezoelectric actuation electronics, all fabricated in a CMOS microelectronic process. The microagitation technique improves mixing and shortens reaction time. Further, it generates heating, which also improves the reaction time of the fluids. In this paper, the efficiency of the microagitation system is evaluated as a function of the amplitude and the frequency of the signal actuation. The relative contribution of the generated heating is also discussed. The system is tested for the measurement of the uric acid concentration in urine.

Thermo-mechanical properties and integrity of metallic interconnects in microelectronics

NASA Astrophysics Data System (ADS)

Ege, Efe Sinan

In this dissertation, combined numerical (Finite Element Method) and experimental efforts were undertaken to study thermo-mechanical behavior in microelectronic devices. Interconnects, including chip-level metallization and package-level solder joints, are used to join many of the circuit parts in modern equipment. The dissertation is structured into six independent studies after the introductory chapter. The first two studies focus on thermo-mechanical fatigue of solder joints. Thermo-mechanical fatigue, in the form of damage along a microstructurally coarsened region in tin-lead solder, is analyzed along with the effects of intermetallic morphology. Also, lap-shear testing is modeled to characterize the joint and to investigate the validity of experimental data from different solder and substrate geometries. In the third study, the effects of pre-machined holes on strain localization and overall ductility in bulk eutectic tin-lead alloy is examined. Finite element analyses, taking into account the viscoplastic response, were carried out to provide a mechanistic rationale to corroborate the experimental findings. The fourth study concerns chip-level copper interconnects. Various combinations of oxide and polymer-based low-k dielectric schemes, with and without the thin barrier layers surrounding the Cu line, are considered. Attention is devoted to the thermal stress and strain fields and their dependency on material properties, geometry, and modeling details. This study is followed by a chapter on atomistics of interface-mediated plasticity in thin metallic films. The objective is to gain fundamental insight into the underlying mechanisms affecting the mechanical response of nanoscale thin films. The final study investigates the effect of microstructural heterogeneity on indentation response, for the purpose of raising awareness of the uncertainties involved in applying indentation techniques in probing mechanical properties of miniaturized devices.

Silicon Integrated Optics: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Shearn, Michael Joseph, II

For decades, the microelectronics industry has sought integration and miniaturization as canonized in Moore's Law, and has continued doubling transistor density about every two years. However, further miniaturization of circuit elements is creating a bandwidth problem as chip interconnect wires shrink as well. A potential solution is the creation of an on-chip optical network with low delays that would be impossible to achieve using metal buses. However, this technology requires integrating optics with silicon microelectronics. The lack of efficient silicon optical sources has stymied efforts of an all-Si optical platform. Instead, the integration of efficient emitter materials, such as III-V semiconductors, with Si photonic structures is a low-cost, CMOS-compatible alternative platform. This thesis focuses on making and measuring on-chip photonic structures suitable for on-chip optical networking. The first part of the thesis assesses processing techniques of silicon and other semiconductor materials. Plasmas for etching and surface modification are described and used to make bonded, hybrid Si/III-V structures. Additionally, a novel masking method using gallium implantation into silicon for pattern definition is characterized. The second part of the thesis focuses on demonstrations of fabricated optical structures. A dense array of silicon devices is measured, consisting of fully-etched grating couplers, low-loss waveguides and ring resonators. Finally, recent progress in the Si/III-V hybrid system is discussed. Supermode control of devices is described, which uses changing Si waveguide width to control modal overlap with the gain material. Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing a CMOS-compatible process suitable for integration on in electronics platforms. Future prospects and ultimate limits of Si devices and the hybrid Si/III-V system are also considered.

Printing Peptide arrays with a complementary metal oxide semiconductor chip.

PubMed

Loeffler, Felix F; Cheng, Yun-Chien; Muenster, Bastian; Striffler, Jakob; Liu, Fanny C; Ralf Bischoff, F; Doersam, Edgar; Breitling, Frank; Nesterov-Mueller, Alexander

2013-01-01

: In this chapter, we discuss the state-of-the-art peptide array technologies, comparing the spot technique, lithographical methods, and microelectronic chip-based approaches. Based on this analysis, we describe a novel peptide array synthesis method with a microelectronic chip printer. By means of a complementary metal oxide semiconductor chip, charged bioparticles can be patterned on its surface. The bioparticles serve as vehicles to transfer molecule monomers to specific synthesis spots. Our chip offers 16,384 pixel electrodes on its surface with a spot-to-spot pitch of 100 μm. By switching the voltage of each pixel between 0 and 100 V separately, it is possible to generate arbitrary particle patterns for combinatorial molecule synthesis. Afterwards, the patterned chip surface serves as a printing head to transfer the particle pattern from its surface to a synthesis substrate. We conducted a series of proof-of-principle experiments to synthesize high-density peptide arrays. Our solid phase synthesis approach is based on the 9-fluorenylmethoxycarbonyl protection group strategy. After melting the particles, embedded monomers diffuse to the surface and participate in the coupling reaction to the surface. The method demonstrated herein can be easily extended to the synthesis of more complicated artificial molecules by using bioparticles with artificial molecular building blocks. The possibility of synthesizing artificial peptides was also shown in an experiment in which we patterned biotin particles in a high-density array format. These results open the road to the development of peptide-based functional modules for diverse applications in biotechnology.

Corti's organ physiology-based cochlear model: a microelectronic prosthetic implant

NASA Astrophysics Data System (ADS)

Rios, Francisco; Fernandez-Ramos, Raquel; Romero-Sanchez, Jorge; Martin, Jose Francisco

2003-04-01

Corti"s Organ is an Electro-Mechanical transducer that allows the energy coupling between acoustical stimuli and auditory nerve. Although the structure and funtionality of this organ are complex, state of the art models have been currently developed and tested. Cochlea model presented in this paper is based on the theories of Bekesy and others and concerns on the behaviour of auditory system on frequency-place domain and mechanisms of lateral inhibition. At the same time, present state of technology will permit us developing a microsystem that reproduce this phenomena applied to hearing aid prosthesis. Corti"s Organ is composed of more than 20.000 cilia excited by mean of travelling waves. These waves produce relative pressures distributed along the cochlea, exciting an specific number of cilia in a local way. Nonlinear mechanisms of local adaptation to the intensity (external cilia cells) and lateral inhibition (internal cilia cells) allow the selection of very few elements excited. These transmit a very precise intensity and frequency information. These signals are the only ones coupled to the auditory nerve. Distribution of pressure waves matches a quasilogaritmic law due to Cochlea morphology. Microsystem presented in this paper takes Bark"s law as an approximation to this behaviour consisting on grouped arbitrary elements composed of a set of selective coupled exciters (bank of filters according to Patterson"s model).These sets apply the intensity adaptation principles and lateral inhibition. Elements excited during the process generate a bioelectric signal in the same way than cilia cell. A microelectronic solution is presented for the development of an implantable prosthesis device.

Solid State Research, 1973:2.

DTIC Science & Technology

MERCURY COMPOUNDS, CADMIUM COMPOUNDS, TELLURIDES, NEODYMIUM COMPOUNDS, PHOSPHATES , ELECTRON TRANSITIONS, INFRARED OPTICAL MATERIALS, CRYSTAL GROWTH, MAGNESIUM OXIDES, PHOSPHORESCENT MATERIALS, SEMICONDUCTOR DIODES, MICROELECTRONICS

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J [Knoxville, TN; Bryan, William Louis [Knoxville, TN; Kress, Reid [Oak Ridge, TN

2003-05-27

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

Dual manifold system and method for fluid transfer

DOEpatents

Doktycz, Mitchel J.; Bryan, William Louis; Kress, Reid

2003-09-30

A dual-manifold assembly is provided for the rapid, parallel transfer of liquid reagents from a microtiter plate to a solid state microelectronic device having biological sensors integrated thereon. The assembly includes aspiration and dispense manifolds connected by a plurality of conduits. In operation, the aspiration manifold is actuated such that the aspiration manifold is seated onto an array of reagent-filled wells of the microtiter plate. The wells are pressurized to force reagent through conduits toward the dispense manifold. A pressure pulse provided by a standard ink-jet printhead ejects nanoliter-to-picoliter droplets of reagent through an array of printhead orifices and onto test sites on the surface of the microelectronic device.

MEMS reliability: The challenge and the promise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, W.M.; Tanner, D.M.; Miller, S.L.

1998-05-01

MicroElectroMechanical Systems (MEMS) that think, sense, act and communicate will open up a broad new array of cost effective solutions only if they prove to be sufficiently reliable. A valid reliability assessment of MEMS has three prerequisites: (1) statistical significance; (2) a technique for accelerating fundamental failure mechanisms, and (3) valid physical models to allow prediction of failures during actual use. These already exist for the microelectronics portion of such integrated systems. The challenge lies in the less well understood micromachine portions and its synergistic effects with microelectronics. This paper presents a methodology addressing these prerequisites and a description ofmore » the underlying physics of reliability for micromachines.« less

Evaluation of advanced microelectronics for inclusion in MIL-STD-975

NASA Technical Reports Server (NTRS)

Scott, W. Richard

1991-01-01

The approach taken by NASA and JPL (Jet Propulsion Laboratory) in the development of a MIL-STD-975 section which contains advanced technology such as Large Scale Integration and Very Large Scale Integration (LSI/VLSI) microelectronic devices is described. The parts listed in this section are recommended as satisfactory for NASA flight applications, in the absence of alternate qualified devices, based on satisfactory results of a vendor capability audit, the availability of sufficient characterization and reliability data from the manufacturers and users and negotiated detail procurement specifications. The criteria used in the selection and evaluation of the vendors and candidate parts, the preparation of procurement specifications, and the status of this activity are discussed.

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Fabrication of fillable microparticles and other complex 3D microstructures

NASA Astrophysics Data System (ADS)

McHugh, Kevin J.; Nguyen, Thanh D.; Linehan, Allison R.; Yang, David; Behrens, Adam M.; Rose, Sviatlana; Tochka, Zachary L.; Tzeng, Stephany Y.; Norman, James J.; Anselmo, Aaron C.; Xu, Xian; Tomasic, Stephanie; Taylor, Matthew A.; Lu, Jennifer; Guarecuco, Rohiverth; Langer, Robert; Jaklenec, Ana

2017-09-01

Three-dimensional (3D) microstructures created by microfabrication and additive manufacturing have demonstrated value across a number of fields, ranging from biomedicine to microelectronics. However, the techniques used to create these devices each have their own characteristic set of advantages and limitations with regards to resolution, material compatibility, and geometrical constraints that determine the types of microstructures that can be formed. We describe a microfabrication method, termed StampEd Assembly of polymer Layers (SEAL), and create injectable pulsatile drug-delivery microparticles, pH sensors, and 3D microfluidic devices that we could not produce using traditional 3D printing. SEAL allows us to generate microstructures with complex geometry at high resolution, produce fully enclosed internal cavities containing a solid or liquid, and use potentially any thermoplastic material without processing additives.

Swimming using surface acoustic waves.

PubMed

Bourquin, Yannyk; Cooper, Jonathan M

2013-01-01

Microactuation of free standing objects in fluids is currently dominated by the rotary propeller, giving rise to a range of potential applications in the military, aeronautic and biomedical fields. Previously, surface acoustic waves (SAWs) have been shown to be of increasing interest in the field of microfluidics, where the refraction of a SAW into a drop of fluid creates a convective flow, a phenomenon generally known as SAW streaming. We now show how SAWs, generated at microelectronic devices, can be used as an efficient method of propulsion actuated by localised fluid streaming. The direction of the force arising from such streaming is optimal when the devices are maintained at the Rayleigh angle. The technique provides propulsion without any moving parts, and, due to the inherent design of the SAW transducer, enables simple control of the direction of travel.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

FOREWORD: Proceedings of the 39th International Microelectronics and Packaging IMAPS Poland Conference

NASA Astrophysics Data System (ADS)

Jasiński, Piotr; Górecki, Krzysztof; Bogdanowicz, Robert

2016-01-01

These proceedings are a collection of the selected articles presented at the 39th International Microelectronics and Packaging IMAPS Poland Conference, held in Gdansk, Poland on September 20-23, 2015 (IMAPS Poland 2015). The conference has been held under the scientific patronage of the International Microelectronics and Packaging Society Poland Chapter and the Committee of Electronics and Telecommunication, Polish Academy of Science and jointly hosted by the Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics (GUT) and the Gdynia Maritime University, Faculty of Electrical Engineering (GMU). The IMAPS Poland conference series aims to advance interdisciplinary scientific information exchange and the discussion of the science and technology of advanced electronics. The IMAPS Poland 2015 conference took place in the heart of Gdansk, two minutes walking distance from the beach. The surroundings and location of the venue guaranteed excellent working and leisure conditions. The three-day conference highlighted invited talks by outstanding scientists working in important areas of electronics and electronic material science. The eight sessions covered areas in the fields of electronics packaging, interconnects on PCB, Low Temperature Co-fired Ceramic (LTCC), MEMS devices, transducers, sensors and modelling of electronic devices. The conference was attended by 99 participants from 11 countries. The conference schedule included 18 invited presentations and 78 poster presentations.

Second-harmonic generation in substoichiometric silicon nitride layers

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Sparsity-Based Super Resolution for SEM Images.

PubMed

Tsiper, Shahar; Dicker, Or; Kaizerman, Idan; Zohar, Zeev; Segev, Mordechai; Eldar, Yonina C

2017-09-13

The scanning electron microscope (SEM) is an electron microscope that produces an image of a sample by scanning it with a focused beam of electrons. The electrons interact with the atoms in the sample, which emit secondary electrons that contain information about the surface topography and composition. The sample is scanned by the electron beam point by point, until an image of the surface is formed. Since its invention in 1942, the capabilities of SEMs have become paramount in the discovery and understanding of the nanometer world, and today it is extensively used for both research and in industry. In principle, SEMs can achieve resolution better than one nanometer. However, for many applications, working at subnanometer resolution implies an exceedingly large number of scanning points. For exactly this reason, the SEM diagnostics of microelectronic chips is performed either at high resolution (HR) over a small area or at low resolution (LR) while capturing a larger portion of the chip. Here, we employ sparse coding and dictionary learning to algorithmically enhance low-resolution SEM images of microelectronic chips-up to the level of the HR images acquired by slow SEM scans, while considerably reducing the noise. Our methodology consists of two steps: an offline stage of learning a joint dictionary from a sequence of LR and HR images of the same region in the chip, followed by a fast-online super-resolution step where the resolution of a new LR image is enhanced. We provide several examples with typical chips used in the microelectronics industry, as well as a statistical study on arbitrary images with characteristic structural features. Conceptually, our method works well when the images have similar characteristics, as microelectronics chips do. This work demonstrates that employing sparsity concepts can greatly improve the performance of SEM, thereby considerably increasing the scanning throughput without compromising on analysis quality and resolution.

Interactions of atomic hydrogen with amorphous SiO2

NASA Astrophysics Data System (ADS)

Yue, Yunliang; Wang, Jianwei; Zhang, Yuqi; Song, Yu; Zuo, Xu

2018-03-01

Dozens of models are investigated by the first-principles calculations to simulate the interactions of an atomic hydrogen with a defect-free random network of amorphous SiO2 (a-SiO2) and oxygen vacancies. A wide variety of stable configurations are discovered due to the disorder of a-SiO2, and their structures, charges, magnetic moments, spin densities, and density of states are calculated. The atomic hydrogen interacts with the defect-free a-SiO2 in positively or negatively charged state, and produces the structures absent in crystalline SiO2. It passivates the neutral oxygen vacancies and generates two neutral hydrogenated E‧ centers with different Si dangling bond projections. Electron spin resonance parameters, including Fermi contacts, and g-tensors, are calculated for these centers. The atomic hydrogen interacts with the positive oxygen vacancies in dimer configuration, and generate four different positive hydrogenated defects, two of which are puckered like the Eγ‧ centers. This research helps to understand the interactions between an atomic hydrogen, and defect-free a-SiO2 and oxygen vacancies, which may generate the hydrogen-complexed defects that play a key role in the degeneration of silicon/silica-based microelectronic devices.

Three levels of neuroelectronic interfacing: silicon chips with ion channels, nerve cells, and brain tissue.

PubMed

Fromherz, Peter

2006-12-01

We consider the direct electrical interfacing of semiconductor chips with individual nerve cells and brain tissue. At first, the structure of the cell-chip contact is studied. Then we characterize the electrical coupling of ion channels--the electrical elements of nerve cells--with transistors and capacitors in silicon chips. On that basis it is possible to implement signal transmission between microelectronics and the microionics of nerve cells in both directions. Simple hybrid neuroelectronic systems are assembled with neuron pairs and with small neuronal networks. Finally, the interfacing with capacitors and transistors is extended to brain tissue cultured on silicon chips. The application of highly integrated silicon chips allows an imaging of neuronal activity with high spatiotemporal resolution. The goal of the work is an integration of neuronal network dynamics with digital electronics on a microscopic level with respect to experiments in brain research, medical prosthetics, and information technology.

Advanced space system concepts and their orbital support needs (1980 - 2000). Volume 2: Final report

NASA Technical Reports Server (NTRS)

Bekey, I.; Mayer, H. L.; Wolfe, M. G.

1976-01-01

The results are presented of a study which identifies over 100 new and highly capable space systems for the 1980-2000 time period: civilian systems which could bring benefits to large numbers of average citizens in everyday life, much enhance the kinds and levels of public services, increase the economic motivation for industrial investment in space, expand scientific horizons; and, in the military area, systems which could materially alter current concepts of tactical and strategic engagements. The requirements for space transportation, orbital support, and technology for these systems are derived, and those requirements likely to be shared between NASA and the DoD in the time period identified. The high leverage technologies for the time period are identified as very large microwave antennas and optics, high energy power subsystems, high precision and high power lasers, microelectronic circuit complexes and data processors, mosaic solid state sensing devices, and long-life cryogenic refrigerators.

Vinyl Sulfonate Esters: Efficient Chain Transfer Agents for the 3D-Printing of Tough Photopolymers without Retardation.

PubMed

Seidler, Konstanze; Griesser, Markus; Kury, Markus; Reghunathan, Harikrishna; Dorfinger, Peter; Koch, Thomas; Svirkova, Anastasiya; Marchetti-Deschmann, Martina; Stampfl, Jürgen; Moszner, Norbert; Gorsche, Christian; Liska, Robert

2018-05-04

Photoinitiated radical polymer network formation is lacking freedom for tailored network design. Resulting inhomogeneous network architectures and brittle material behavior of such glassy-type networks limit the commercial application of photopolymers in 3D printing, biomedicine or microelectronics. An ester-activated vinyl sulfonate ester (EVS) is presented for the rapid formation of tailored methacrylate-based networks with nearly no retardation, reduced shrinkage stress, high monomer conversion and improved material toughness. Laser flash photolysis followed by theoretical calculations and photoreactor studies elucidate the fast chain transfer reaction and exceptional regulating ability of EVS. Final photopolymer networks exhibit high tensile strength, improved elongation at break and high impact resistance, while maintaining high modulus and hardness at ambient conditions. These findings make EVS an exceptional candidate for the 3D printing of tough photopolymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hardness Assurance for Low-Energy Proton-Induced Single-Event Effects: Final report for LDRD Project 173134

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dodds, Nathaniel Anson

2015-08-01

This report briefly summarizes three publications that resulted from a two-year LDRD. The three publications address a recently emerging reliability issue: namely, that low-energy protons (LEPs) can cause single-event effects (SEEs) in highly scaled microelectronics. These publications span from low to high technology readiness levels. In the first, novel experiments were used to prove that proton direct ionization is the dominant mechanism for LEP-induced SEEs. In the second, a simple method was developed to calculate expected on-orbit error rates for LEP effects. This simplification was enabled by creating (and characterizing) an accelerated space-like LEP environment in the laboratory. In themore » third publication, this new method was applied to many memory circuits from the 20-90 nm technology nodes to study the general importance of LEP effects, in terms of their contribution to the total on-orbit SEE rate.« less

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Smart substrates: Making multi-chip modules smarter

NASA Astrophysics Data System (ADS)

Wunsch, T. F.; Treece, R. K.

1995-05-01

A novel multi-chip module (MCM) design and manufacturing methodology which utilizes active CMOS circuits in what is normally a passive substrate realizes the 'smart substrate' for use in highly testable, high reliability MCMS. The active devices are used to test the bare substrate, diagnose assembly errors or integrated circuit (IC) failures that require rework, and improve the testability of the final MCM assembly. A static random access memory (SRAM) MCM has been designed and fabricated in Sandia Microelectronics Development Laboratory in order to demonstrate the technical feasibility of this concept and to examine design and manufacturing issues which will ultimately determine the economic viability of this approach. The smart substrate memory MCM represents a first in MCM packaging. At the time the first modules were fabricated, no other company or MCM vendor had incorporated active devices in the substrate to improve manufacturability and testability, and thereby improve MCM reliability and reduce cost.

Short-pulse laser interactions with disordered materials and liquids

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phinney, L.M.; Goldman, C.H.; Longtin, J.P.

High-power, short-pulse lasers in the picosecond and subpicosecond range are utilized in an increasing number of technologies, including materials processing and diagnostics, micro-electronics and devices, and medicine. In these applications, the short-pulse radiation interacts with a wide range of media encompassing disordered materials and liquids. Examples of disordered materials include porous media, polymers, organic tissues, and amorphous forms of silicon, silicon nitride, and silicon dioxide. In order to accurately model, efficiently control, and optimize short-pulse, laser-material interactions, a thorough understanding of the energy transport mechanisms is necessary. Thus, fractals and percolation theory are used to analyze the anomalous diffusion regimemore » in random media. In liquids, the thermal aspects of saturable and multiphoton absorption are examined. Finally, a novel application of short-pulse laser radiation to reduce surface adhesion forces in microstructures through short-pulse laser-induced water desorption is presented.« less

The NASA Electronic Parts and Packaging (NEPP) Program: An Overview

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Sampson, Michael J.

2016-01-01

This presentation provides an overview of the NEPP Program. The NEPP Mission is to provide guidance to NASA for the selection and application of microelectronics technologies; Improve understanding of the risks related to the use of these technologies in the space environment; Ensure that appropriate research is performed to meet NASA mission assurance needs. NEPP's Goals are to provide customers with appropriate and cost-effective risk knowledge to aid in: Selection and application of microelectronics technologies; Improved understanding of risks related to the use of these technologies in the space environment; Appropriate evaluations to meet NASA mission assurance needs; Guidelines for test and application of parts technologies in space; Assurance infrastructure and support for technologies in use by NASA space systems.

Gold-based electrical interconnections for microelectronic devices

DOEpatents

Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

2002-01-01

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA Technical Reports Server (NTRS)

White, Mark; MacNeal, Kristen; Cooper, Mark

2012-01-01

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays

PubMed Central

Jeong, Jaeyoung; Kim, Juho; Song, Kwangsun; Autumn, Kellar; Lee, Jongho

2014-01-01

Developing electronics in unconventional forms provides opportunities to expand the use of electronics in diverse applications including bio-integrated or implanted electronics. One of the key challenges lies in integrating semiconductor microdevices onto unconventional substrates without glue, high pressure or temperature that may cause damage to microdevices, substrates or interfaces. This paper describes a solution based on natural gecko setal arrays that switch adhesion mechanically on and off, enabling pick and place manipulation of thin microscale semiconductor materials onto diverse surfaces including plants and insects whose surfaces are usually rough and irregular. A demonstration of functional ‘geckoprinted’ microelectronic devices provides a proof of concept of our results in practical applications. PMID:25056216

Free-world microelectronic manufacturing equipment

NASA Astrophysics Data System (ADS)

Kilby, J. S.; Arnold, W. H.; Booth, W. T.; Cunningham, J. A.; Hutcheson, J. D.; Owen, R. W.; Runyan, W. R.; McKenney, Barbara L.; McGrain, Moira; Taub, Renee G.

1988-12-01

Equipment is examined and evaluated for the manufacture of microelectronic integrated circuit devices and sources for that equipment within the Free World. Equipment suitable for the following are examined: single-crystal silicon slice manufacturing and processing; required lithographic processes; wafer processing; device packaging; and test of digital integrated circuits. Availability of the equipment is also discussed, now and in the near future. Very adequate equipment for most stages of the integrated circuit manufacturing process is available from several sources, in different countries, although the best and most widely used versions of most manufacturing equipment are made in the United States or Japan. There is also an active market in used equipment, suitable for manufacture of capable integrated circuits with performance somewhat short of the present state of the art.

Ceramic materials of low-temperature synthesis for dielectric coating applied by 3D aerosol printing used in nano- and microelectronics, lighting engineering, and spacecraft control devices

NASA Astrophysics Data System (ADS)

Ivanov, A. A.; Tuev, V. I.; Nisan, A. V.; Potapov, G. N.

2016-11-01

A synthesis technique of low-temperature ceramic material based on aluminosilicates of dendrimer morphology capable to contain up to 80 wt % of nitrides and oxides of high-melting compounds as filler has been developed. The synthesis is based on a sol-gel method followed by mechanochemical treatment and ultrasonic dispersing. Dielectric ceramic layers with the layer thickness in the nanometer range and high thermal conductivity have been obtained for the first time by 3D aerosol printing of the synthesized material. The study of the obtained ceramic coating on the metal surface (Al) has proved its use prospects in microelectronics, light engineering, and devices for special purposes.

Thin film microelectronics materials production in the vacuum of space

NASA Astrophysics Data System (ADS)

Ignatiev, A.; Sterling, M.; Horton, C.; Freundlich, A.; Pei, S.; Hill, R.

1997-01-01

The international Space Station era will open up a new dimension in the use of one of the unique attributes of space, vacuum, for the production of advanced semiconductor materials and devices for microelectronics applications. Ultra-vacuum is required for the fabrication in thin film form of high quality semiconductors. This can be accomplished behind a free flying platform similar to the current Wake Shield Facility which is specifically designed to support in-space production. The platform will require apparatus for thin film growth, a robotics interface to allow for the change out of raw materials and the harvesting of finished product, and a servicing plant incorporating Space Station that will support long-term utilization of the platform.

CRRES microelectronics package flight data analysis

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

1993-01-01

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

The LER/LWR metrology challenge for advance process control through 3D-AFM and CD-SEM

NASA Astrophysics Data System (ADS)

Faurie, P.; Foucher, J.; Foucher, A.-L.

2009-12-01

The continuous shrinkage in dimensions of microelectronic devices has reached such level, with typical gate length in advance R&D of less than 20nm combine with the introduction of new architecture (FinFET, Double gate...) and new materials (porous interconnect material, 193 immersion resist, metal gate material, high k materials...), that new process parameters have to be well understood and well monitored to guarantee sufficient production yield in a near future. Among these parameters, there are the critical dimensions (CD) associated to the sidewall angle (SWA) values, the line edge roughness (LER) and the line width roughness (LWR). Thus, a new metrology challenge has appeared recently and consists in measuring "accurately" the fabricated patterns on wafers in addition to measure the patterns on a repeatable way. Therefore, a great effort has to be done on existing techniques like CD-SEM, Scatterometry and 3D-AFM in order to develop them following the two previous criteria: Repeatability and Accuracy. In this paper, we will compare the 3D-AFM and CD-SEM techniques as a mean to measure LER and LWR on silicon and 193 resist and point out CD-SEM impact on the material during measurement. Indeed, depending on the material type, the interaction between the electron beam and the material or between the AFM tip and the material can vary a lot and subsequently can generate measurements bias. The first results tend to show that depending on CD-SEM conditions (magnification, number of acquisition frames) the final outputs can vary on a large range and therefore show that accuracy in such measurements are really not obvious to obtain. On the basis of results obtained on various materials that present standard sidewall roughness, we will show the limit of each technique and will propose different ways to improve them in order to fulfil advance roadmap requirements for the development of the next IC generation.

Facility safety study

NASA Technical Reports Server (NTRS)

1979-01-01

The safety of NASA's in house microelectronics facility is addressed. Industrial health standards, facility emission control requirements, operation and safety checklists, and the disposal of epitaxial vent gas are considered.

JPRS report. Science and technology: Europe and Latin America

NASA Astrophysics Data System (ADS)

1987-12-01

Topics addressed include: advanced materials; aerospace; civil aviation; automative industry; biotechnology; computers; metallurgical industries; microelectronics; science and technology policy; and lasers, sensor, and optics.

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Planning for the semiconductor manufacturer of the future

NASA Technical Reports Server (NTRS)

Fargher, Hugh E.; Smith, Richard A.

1992-01-01

Texas Instruments (TI) is currently contracted by the Air Force Wright Laboratory and the Defense Advanced Research Projects Agency (DARPA) to develop the next generation flexible semiconductor wafer fabrication system called Microelectronics Manufacturing Science & Technology (MMST). Several revolutionary concepts are being pioneered on MMST, including the following: new single-wafer rapid thermal processes, in-situ sensors, cluster equipment, and advanced Computer Integrated Manufacturing (CIM) software. The objective of the project is to develop a manufacturing system capable of achieving an order of magnitude improvement in almost all aspects of wafer fabrication. TI was awarded the contract in Oct., 1988, and will complete development with a fabrication facility demonstration in April, 1993. An important part of MMST is development of the CIM environment responsible for coordinating all parts of the system. The CIM architecture being developed is based on a distributed object oriented framework made of several cooperating subsystems. The software subsystems include the following: process control for dynamic control of factory processes; modular processing system for controlling the processing equipment; generic equipment model which provides an interface between processing equipment and the rest of the factory; specification system which maintains factory documents and product specifications; simulator for modelling the factory for analysis purposes; scheduler for scheduling work on the factory floor; and the planner for planning and monitoring of orders within the factory. This paper first outlines the division of responsibility between the planner, scheduler, and simulator subsystems. It then describes the approach to incremental planning and the way in which uncertainty is modelled within the plan representation. Finally, current status and initial results are described.

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications.

PubMed

Sung, Ho-Kun; Qiang, Tian; Yao, Zhao; Li, Yang; Wu, Qun; Lee, Hee-Kwan; Park, Bum-Doo; Lim, Woong-Sun; Park, Kyung-Ho; Wang, Cong

2017-06-20

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF 6 with additive O 2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl 3  + N 2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl 2  + O 2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl 2 and 3.6 sccm O 2 . These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs' bevel mesa, and avalanche photodiode fabrication.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Sub-micron materials characterization using near-field optics

NASA Astrophysics Data System (ADS)

Blodgett, David Wesley

1998-12-01

High-resolution sub-surface materials characterization and inspection are critical in the microelectronics and thin films industries. To this end, a technique is described that couples the bulk property measurement capabilities of high-frequency ultrasound with the high-resolution surface imaging capabilities of the near-field optical microscope. Sensing bulk microstructure variations in the material, such as grain boundaries, requires a detection footprint smaller than the variation itself. The near-field optical microscope, with the ability to exceed the diffraction limit in optical resolution, meets this requirement. Two apertureless near-field optical microscopes, on-axis and off-axis illumination, have been designed and built. Near-field and far-field approach curves for both microscopes are presented. The sensitivity of the near-field approach curve was 8.3 muV/nm. Resolution studies for the near-field microscope indicate optical resolutions on the order of 50 nm, which exceeds the diffraction limit. The near-field microscope has been adapted to detect both contact-transducer-generated and laser-generated ultrasound. The successful detection of high-frequency ultrasound with the near-field optical microscope demonstrates the potential of this technique.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

An integrated CMOS high voltage supply for lab-on-a-chip systems.

PubMed

Behnam, M; Kaigala, G V; Khorasani, M; Marshall, P; Backhouse, C J; Elliott, D G

2008-09-01

Electrophoresis is a mainstay of lab-on-a-chip (LOC) implementations of molecular biology procedures and is the basis of many medical diagnostics. High voltage (HV) power supplies are necessary in electrophoresis instruments and are a significant part of the overall system cost. This cost of instrumentation is a significant impediment to making LOC technologies more widely available. We believe one approach to overcoming this problem is to use microelectronic technology (complementary metal-oxide semiconductor, CMOS) to generate and control the HV. We present a CMOS-based chip (3 mm x 2.9 mm) that generates high voltages (hundreds of volts), switches HV outputs, and is powered by a 5 V input supply (total power of 28 mW) while being controlled using a standard computer serial interface. Microchip electrophoresis with laser induced fluorescence (LIF) detection is implemented using this HV CMOS chip. With the other advancements made in the LOC community (e.g. micro-fluidic and optical devices), these CMOS chips may ultimately enable 'true' LOC solutions where essentially all the microfluidics, photonics and electronics are on a single chip.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Energy harvesting schemes for building interior environment monitoring

NASA Astrophysics Data System (ADS)

Zylka, Pawel; Pociecha, Dominik

2016-11-01

A vision to supply microelectronic devices without batteries making them perpetual or extending time of service in battery-oriented mobile supply schemes is the driving force of the research related to ambient energy harvesting. Energy harnessing aims thus at extracting energy from various ambient energy "pools", which generally are cost- or powerineffective to be scaled up for full-size, power-plant energy generation schemes supplying energy in electric form. These include - but are not limited to - waste heat, electromagnetic hum, vibrations, or human-generated power in addition to traditional renewable energy resources like water flow, tidal and wind energy or sun radiation which can also be exploited at the miniature scale by energy scavengers. However, in case of taking advantage of energy harvesting strategies to power up sensors monitoring environment inside buildings adaptable energy sources are restrained to only some which additionally are limited in spatial and temporal accessibility as well as available power. The paper explores experimentally an energy harvesting scheme exploiting human kinesis applicable in indoor environment for supplying a wireless indoor micro-system, monitoring ambient air properties (pressure, humidity and temperature).

Wrist display concept demonstration based on 2-in. color AMOLED

NASA Astrophysics Data System (ADS)

Meyer, Frederick M.; Longo, Sam J.; Hopper, Darrel G.

2004-09-01

The wrist watch needs an upgrade. Recent advances in optoelectronics, microelectronics, and communication theory have established a technology base that now make the multimedia Dick Tracy watch attainable during the next decade. As a first step towards stuffing the functionality of an entire personnel computer (PC) and television receiver under a watch face, we have set a goal of providing wrist video capability to warfighters. Commercial sector work on the wrist form factor already includes all the functionality of a personal digital assistant (PDA) and full PC operating system. Our strategy is to leverage these commercial developments. In this paper we describe our use of a 2.2 in. diagonal color active matrix light emitting diode (AMOLED) device as a wrist-mounted display (WMD) to present either full motion video or computer generated graphical image formats.

From Playroom to Lab: Tough Stretchable Electronics Analyzed with a Tabletop Tensile Tester Made from Toy‐Bricks

PubMed Central

Kettlgruber, Gerald; Siket, Christian M.; Drack, Michael; Graz, Ingrid M.; Cakmak, Umut; Major, Zoltan; Kaltenbrunner, Martin; Bauer, Siegfried

2016-01-01

Toy bricks are an ideal platform for the cost‐effective rapid prototyping of a tabletop tensile tester with measurement accuracy on par with expensive, commercially available laboratory equipment. Here, a tester is presented that is not only a versatile demonstration device in mechanics, electronics, and physics education and an eye‐catcher on exhibitions, but also a powerful tool for stretchable electronics research. Following the “open‐source movement” the build‐up of the tester is described and all the details for easy reproduction are disclosed. A a new design of highly conformable all‐elastomer based graded rigid island printed circuit boards is developed. Tough bonded to this elastomer substrate are imperceptible electronic foils bearing conductors and off‐the‐shelf microelectronics, paving the way for next generation smart electronic appliances. PMID:27588259

Swimming Using Surface Acoustic Waves

PubMed Central

Bourquin, Yannyk; Cooper, Jonathan M.

2013-01-01

Microactuation of free standing objects in fluids is currently dominated by the rotary propeller, giving rise to a range of potential applications in the military, aeronautic and biomedical fields. Previously, surface acoustic waves (SAWs) have been shown to be of increasing interest in the field of microfluidics, where the refraction of a SAW into a drop of fluid creates a convective flow, a phenomenon generally known as SAW streaming. We now show how SAWs, generated at microelectronic devices, can be used as an efficient method of propulsion actuated by localised fluid streaming. The direction of the force arising from such streaming is optimal when the devices are maintained at the Rayleigh angle. The technique provides propulsion without any moving parts, and, due to the inherent design of the SAW transducer, enables simple control of the direction of travel. PMID:23431358

Twenty-Five Years of Dynamic Growth.

ERIC Educational Resources Information Center

Pipes, Lana

1980-01-01

Discusses developments in instructional technology in the past 25 years in the areas of audio, video, micro-electronics, social evolution, the space race, and living with rapidly changing technology. (CMV)

A Course in Polymer Processing.

ERIC Educational Resources Information Center

Soong, David S.

1985-01-01

A special-topics course in polymer processing has acquired regular course status. Course goals, content (including such new topics as polymer applications in microelectronics), and selected term projects are described. (JN)

Thick, low-stress films, and coated substrates formed therefrom

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1991-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Ultralow-Loss CMOS Copper Plasmonic Waveguides.

PubMed

Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

2016-01-13

Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

Nano-Nucleation Characteristic of Cu-Ag Alloy Directly Electrodeposited on W Diffusion Barrier for Microelectronic Device Interconnect.

PubMed

Kim, Kang O; Kim, Sunjung

2016-05-01

Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.

Thermal and Electrical Characterization of Alumina Substrate for Microelectronic Applications

NASA Astrophysics Data System (ADS)

Ahmad, S.; Ibrahim, A.; Alias, R.; Shapee, S. M.; Ambak, Z.; Zakaria, S. Z.; Yahya, M. R.; Mat, A. F. A.

2010-03-01

This paper reports the effect of sintering temperature on thermal and electrical properties of alumina material as substrate for microelectronic devices. Alumina materials in the form of green sheet with 1 mm thickness were sintered at 1100° C, 1300° C and 1500° C for about 20 hours using heating and cooling rates of 2° C/min. The densities were measured using densitometer and the microstructures of the samples were analyzed using SEM micrographs. Meanwhile thermal and electrical properties of the samples were measured using flash method and impedance analyzer respectively. It was found that thermal conductivity and thermal diffusivity of the substrate increases as sintering temperature increases. It was found also that the dielectric constant of alumina substrate increases as the sintering temperature increases.

Surgical Coagulator With Carbon Dioxide Laser For Gynecology

NASA Astrophysics Data System (ADS)

Wolinski, Wieslaw; Kazmirowski, Antoni; Korobowicz, Witold; Olborski, Zbigniew

1987-10-01

The technical data and parameters of the CO2 surgical laser for gynecology are given. Coagulator was designed and constructed in Institute of Microelectronics and Optoelectronics Warsaw Technical University.

NASA Tech Briefs, September 1993. Volume 17, No. 9

NASA Technical Reports Server (NTRS)

1993-01-01

Topics include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports.

88-Inch Cyclotron

Science.gov Websites

, commercial, and international institutions use these beams to understand the effect of radiation on microelectronics, optics, materials, and cells. Click here to see the 88-Inch Cyclotron's contributions to space

Terrestrial Sources of X-Ray Radiation and Their Effects on NASA Flight Hardware

NASA Technical Reports Server (NTRS)

Kniffin, Scott

2016-01-01

X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.

78 FR 59916 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-30

... Minnesota, Dept. of Chemical Engineering & Material Science, 421 Washington Avenue SE, Minneapolis, MN 55455... microelectronics, micro-electromechanical systems (MEMS) as well as nanotechnology materials and devices...

454th Brookhaven Lecture

ScienceCinema

Charles Black

2017-12-09

Black discusses examples of integrating self-assembly into semiconductor microelectronics, where advances in the ability to define circuit elements at ever-higher resolution have largely fueled more than 40 years of consistent performance improvements

Electrical properties of epoxies used in hybrid microelectronics

NASA Technical Reports Server (NTRS)

Stout, C. W.

1976-01-01

The electrical properties and basic characteristics of the structure of conductive epoxies were studied. The results of the experimental work performed to measure the electrical properties of epoxies are presented.

NASA Tech Briefs, June 1994. Volume 18, No. 6

NASA Technical Reports Server (NTRS)

1994-01-01

Topics covered include: Microelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Manufacturing/Fabrication; Mathematics and Information Sciences; Life Sciences; Books and Reports

Practical Applications of Cosmic Ray Science: Spacecraft, Aircraft, Ground-Based Computation and Control Systems, Exploration, and Human Health and Safety

NASA Technical Reports Server (NTRS)

Koontz, Steve

2015-01-01

In this presentation a review of galactic cosmic ray (GCR) effects on microelectronic systems and human health and safety is given. The methods used to evaluate and mitigate unwanted cosmic ray effects in ground-based, atmospheric flight, and space flight environments are also reviewed. However not all GCR effects are undesirable. We will also briefly review how observation and analysis of GCR interactions with planetary atmospheres and surfaces and reveal important compositional and geophysical data on earth and elsewhere. About 1000 GCR particles enter every square meter of Earth’s upper atmosphere every second, roughly the same number striking every square meter of the International Space Station (ISS) and every other low- Earth orbit spacecraft. GCR particles are high energy ionized atomic nuclei (90% protons, 9% alpha particles, 1% heavier nuclei) traveling very close to the speed of light. The GCR particle flux is even higher in interplanetary space because the geomagnetic field provides some limited magnetic shielding. Collisions of GCR particles with atomic nuclei in planetary atmospheres and/or regolith as well as spacecraft materials produce nuclear reactions and energetic/highly penetrating secondary particle showers. Three twentieth century technology developments have driven an ongoing evolution of basic cosmic ray science into a set of practical engineering tools needed to design, test, and verify the safety and reliability of modern complex technological systems and assess effects on human health and safety effects. The key technology developments are: 1) high altitude commercial and military aircraft; 2) manned and unmanned spacecraft; and 3) increasingly complex and sensitive solid state micro-electronics systems. Space and geophysical exploration needs drove the development of the instruments and analytical tools needed to recover compositional and structural data from GCR induced nuclear reactions and secondary particle showers. Finally, the possible role of GCR secondary particle showers in addressing an important homeland security problem, finding nuclear contraband and weapons, will be briefly reviewed.

Research progress on electronic phase separation in low-dimensional perovskite manganite nanostructures

PubMed Central

2014-01-01

Perovskite oxide manganites with a general formula of R1-x AxMnO3 (where R is a trivalent rare-earth element such as La, Pr, Sm, and A is a divalent alkaline-earth element such as Ca, Sr, and Ba) have received much attention due to their unusual electron-transport and magnetic properties, which are indispensable for applications in microelectronic, magnetic, and spintronic devices. Recent advances in the science and technology have resulted in the feature sizes of microelectronic devices based on perovskite manganite oxides down-scaling into nanoscale dimensions. At the nanoscale, low-dimensional perovskite manganite oxide nanostructures display novel physical properties that are different from their bulk and film counterparts. Recently, there is strong experimental evidence to indicate that the low-dimensional perovskite manganite oxide nanostructures are electronically inhomogeneous, consisting of different spatial regions with different electronic orders, a phenomenon that is named as electronic phase separation (EPS). As the geometry sizes of the low-dimensional manganite nanostructures are reduced to the characteristic EPS length scale (typically several tens of nanometers in manganites), the EPS is expected to be strongly modulated, leading to quite dramatic changes in functionality and more emergent phenomena. Therefore, reduced dimensionality opens a door to the new functionalities in perovskite manganite oxides and offers a way to gain new insight into the nature of EPS. During the past few years, much progress has been made in understanding the physical nature of the EPS in low-dimensional perovskite manganite nanostructures both from experimentalists and theorists, which have a profound impact on the oxide nanoelectronics. This nanoreview covers the research progresses of the EPS in low-dimensional perovskite manganite nanostructures such as nanoparticles, nanowires/nanotubes, and nanostructured films and/or patterns. The possible physical origins of the EPS are also discussed from the signatures of electronic inhomogeneities as well as some theoretical scenarios, to shed light on understanding this phenomenon. Finally, the perspectives to the future researches in this area are also outlined. PMID:25024686

The Materials Chemistry of Atomic Oxygen with Applications to Anisotropic Etching of Submicron Structures in Microelectronics and the Surface Chemistry Engineering of Porous Solids

NASA Technical Reports Server (NTRS)

Koontz, Steve L.; Leger, Lubert J.; Wu, Corina; Cross, Jon B.; Jurgensen, Charles W.

1994-01-01

Neutral atomic oxygen is the most abundant component of the ionospheric plasma in the low Earth orbit environment (LEO; 200 to 700 kilometers altitude) and can produce significant degradation of some spacecraft materials. In order to produce a more complete understanding of the materials chemistry of atomic oxygen, the chemistry and physics of O-atom interactions with materials were determined in three radically different environments: (1) The Space Shuttle cargo bay in low Earth orbit (the EOIM-3 space flight experiment), (2) a high-velocity neutral atom beam system (HVAB) at Los Alamos National Laboratory (LANL), and (3) a microwave-plasma flowing-discharge system at JSC. The Space Shuttle and the high velocity atom beam systems produce atom-surface collision energies ranging from 0.1 to 7 eV (hyperthermal atoms) under high-vacuum conditions, while the flowing discharge system produces a 0.065 eV surface collision energy at a total pressure of 2 Torr. Data obtained in the three different O-atom environments referred to above show that the rate of O-atom reaction with polymeric materials is strongly dependent on atom kinetic energy, obeying a reactive scattering law which suggests that atom kinetic energy is directly available for overcoming activation barriers in the reaction. General relationships between polymer reactivity with O atoms and polymer composition and molecular structure have been determined. In addition, vacuum ultraviolet photochemical effects have been shown to dominate the reaction of O atoms with fluorocarbon polymers. Finally, studies of the materials chemistry of O atoms have produced results which may be of interest to technologists outside the aerospace industry. Atomic oxygen 'spin-off' or 'dual use' technologies in the areas of anisotropic etching in microelectronic materials and device processing, as well as surface chemistry engineering of porous solid materials are described.

JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium

DTIC Science & Technology

1990-04-20

Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles ; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

Research News: Are VLSI Microcircuits Too Hard to Design?

ERIC Educational Resources Information Center

Robinson, Arthur L.

1980-01-01

This research news article on microelectronics discusses the scientific challenge the integrated circuit industry will have in the next decade, for designing the complicated microcircuits made possible by advancing miniaturization technology. (HM)

Germanium: giving microelectronics an efficiency boost

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

Modernization (Selected Articles),

DTIC Science & Technology

1986-09-18

newly developed science such as control theory, artificial intelligence, model identification, computer and microelectronics technology, graphic...five "top guns" from around the country specializing in intellignece , mechanics, software and hardware as our technical advisors. In addition

Risk Management of New Microelectronics for NASA: Radiation Knowledge-base

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.

2004-01-01

Contents include the following: NASA Missions - implications to reliability and radiation constraints. Approach to Insertion of New Technologies Technology Knowledge-base development. Technology model/tool development and validation. Summary comments.

Nanocharacterization Challenges in a Changing Microelectronics Landscape

NASA Astrophysics Data System (ADS)

Brilloüt, Michel

2011-11-01

As the microelectronics industry enters the "nano"-era new challenges emerge. Traditional scaling of the MOS transistor faces major obstacles in fulfilling "Moore's law". New features like strain and new materials (e.g. high k—metal gate stack) are introduced in order to sustain performance increases. For a better electrostatic control, devices will use the third dimension, e.g., in gate-all-around nanowire structures. Due to the escalating cost and complexity of sub-28 nm technologies fewer industrial players can afford the development and production of advanced CMOS processes and many companies acknowledge the fact that the value in products can also be obtained in using more diversified non-digital technologies (the so-called "More-than-Moore" domain). This evolving landscape brings new requirements—discussed in this paper—in terms of physical characterization of technologies and devices.

Effect of Grain Boundary Misorientation on Electromigration in Lead-Free Solder Joints

NASA Astrophysics Data System (ADS)

Tasooji, Amaneh; Lara, Leticia; Lee, Kyuoh

2014-12-01

Reduction in microelectronic interconnect size gives rise to solder bumps consisting of few grains, approaching a single- or bicrystal grain morphology in C4 bumps. Single grain anisotropy, individual grain orientation, presence of easy diffusion paths along grain boundaries, and the increased current density in these small solder bumps aggravate electromigration. This reduces the reliability of the entire microelectronic system. This paper focuses on electromigration behavior in Pb-free solder, specifically the Sn-0.7 wt.%Cu alloy. We discuss the effects of texture, grain orientation, and grain boundary misorientation angle on electromigration (EM) and intermetallic compound formation in EM-tested C4 bumps. The detailed electron backscatter diffraction (EBSD) analysis used in this study reveals the greater influence of grain boundary misorientation on solder bump electromigration compared with the effect associated with individual grain orientation.

Thick, low-stress films, and coated substrates formed therefrom, and methods for making same

DOEpatents

Henager, Jr., Charles H.; Knoll, Robert W.

1992-01-01

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Mandal, R. P.

1976-01-01

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Printing of microstructure strain sensor for structural health monitoring

NASA Astrophysics Data System (ADS)

Le, Minh Quyen; Ganet, Florent; Audigier, David; Capsal, Jean-Fabien; Cottinet, Pierre-Jean

2017-05-01

Recent advances in microelectronics and materials should allow the development of integrated sensors with transduction properties compatible with being printed directly onto a 3D substrate, especially metallic and polymer substrates. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated in ink, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we report on these strategies and demonstrate the potential of 3D-printed microelectronics based on a structural health monitoring (SHM) application for the precision weapon systems. We show that our printed sensors can be employed in non-invasive, high-fidelity and continuous strain monitoring of handguns, making it possible to implement printed sensors on a 3D substrate in either SHM or remote diagnostics. We propose routes to commercialization and novel device opportunities and highlight the remaining challenges for research.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Spacecraft Data Simulator for the test of level zero processing systems

NASA Technical Reports Server (NTRS)

Shi, Jeff; Gordon, Julie; Mirchandani, Chandru; Nguyen, Diem

1994-01-01

The Microelectronic Systems Branch (MSB) at Goddard Space Flight Center (GSFC) has developed a Spacecraft Data Simulator (SDS) to support the development, test, and verification of prototype and production Level Zero Processing (LZP) systems. Based on a disk array system, the SDS is capable of generating large test data sets up to 5 Gigabytes and outputting serial test data at rates up to 80 Mbps. The SDS supports data formats including NASA Communication (Nascom) blocks, Consultative Committee for Space Data System (CCSDS) Version 1 & 2 frames and packets, and all the Advanced Orbiting Systems (AOS) services. The capability to simulate both sequential and non-sequential time-ordered downlink data streams with errors and gaps is crucial to test LZP systems. This paper describes the system architecture, hardware and software designs, and test data designs. Examples of test data designs are included to illustrate the application of the SDS.

Classifying the Basic Parameters of Ultraviolet Copper Bromide Laser

NASA Astrophysics Data System (ADS)

Gocheva-Ilieva, S. G.; Iliev, I. P.; Temelkov, K. A.; Vuchkov, N. K.; Sabotinov, N. V.

2009-10-01

The performance of deep ultraviolet copper bromide lasers is of great importance because of their applications in medicine, microbiology, high-precision processing of new materials, high-resolution laser lithography in microelectronics, high-density optical recording of information, laser-induced fluorescence in plasma and wide-gap semiconductors and more. In this paper we present a statistical study on the classification of 12 basic lasing parameters, by using different agglomerative methods of cluster analysis. The results are based on a big amount of experimental data for UV Cu+ Ne-CuBr laser with wavelengths 248.6 nm, 252.9 nm, 260.0 nm and 270.3 nm, obtained in Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences. The relevant influence of parameters on laser generation is also evaluated. The results are applicable in computer modeling and planning the experiments and further laser development with improved output characteristics.

A review of advances in pixel detectors for experiments with high rate and radiation

NASA Astrophysics Data System (ADS)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

A study of nuclear structure for 244Cm, 241Am, 238Pu, 210Po, 147Pm, 137Cs, 90Sr and 63Ni nuclei used in nuclear battery

NASA Astrophysics Data System (ADS)

Artun, Ozan

2017-07-01

In this paper, we intend to extend the nuclear data of 244Cm, 241Am, 238Pu, 210Po, 147Pm, 137Cs, 90Sr and 63Ni nuclei used in nuclear battery technology, because, these nuclei are quite important for space investigations in radioisotope thermoelectric generator (RTG) and for microelectronic technologies in betavoltaic batteries. Therefore, the nuclear structure properties of nuclei such as separation energies, neutron skin thicknesses, proton, charge and neutron density distributions as a function of radius, the root mean square (rms) proton, charge and neutron radii, binding energies per particle, have been investigated by Hartree-Fock with eight different Skyrme forces. The obtained results have been compared with the experimental data in literature and relativistic mean field theory (RMFT) results.

Application of laser driven fast high density plasma blocks for ion implantation

NASA Astrophysics Data System (ADS)

Sari, Amir H.; Osman, F.; Doolan, K. R.; Ghoranneviss, M.; Hora, H.; Höpfl, R.; Benstetter, G.; Hantehzadeh, M. H.

2005-10-01

The measurement of very narrow high density plasma blocks of high ion energy from targets irradiated with ps-TW laser pulses based on a new skin depth interaction process is an ideal tool for application of ion implantation in materials, especially of silicon, GaAs, or conducting polymers, for micro-electronics as well as for low cost solar cells. A further application is for ion sources in accelerators with most specifications of many orders of magnitudes advances against classical ion sources. We report on near band gap generation of defects by implantation of ions as measured by optical absorption spectra. A further connection is given for studying the particle beam transforming of n-type semiconductors into p-type and vice versa as known from sub-threshold particle beams. The advantage consists in the use of avoiding aggressive or rare chemical materials when using the beam techniques for industrial applications.

Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation

NASA Astrophysics Data System (ADS)

Gomes Perini, L. A.; Bleuet, P.; Filevich, J.; Parker, W.; Buijsse, B.; Kwakman, L. F. Tz.

2017-06-01

Recent improvements in a SEM-based X-ray tomography system are described. In this type of equipment, X-rays are generated through the interaction between a highly focused electron-beam and a geometrically confined anode target. Unwanted long-term drifts of the e-beam can lead to loss of X-ray flux or decrease of spatial resolution in images. To circumvent this issue, a closed-loop control using FFT-based image correlation is integrated to the acquisition routine, in order to provide an in-line drift correction. The X-ray detection system consists of a state-of-the-art scientific CMOS camera (indirect detection), featuring high quantum efficiency (˜60%) and low read-out noise (˜1.2 electrons). The system performance is evaluated in terms of resolution, detectability, and scanning times for applications covering three different scientific fields: microelectronics, technical textile, and material science.

Defect Inspection of Flip Chip Solder Bumps Using an Ultrasonic Transducer

PubMed Central

Su, Lei; Shi, Tielin; Xu, Zhensong; Lu, Xiangning; Liao, Guanglan

2013-01-01

Surface mount technology has spurred a rapid decrease in the size of electronic packages, where solder bump inspection of surface mount packages is crucial in the electronics manufacturing industry. In this study we demonstrate the feasibility of using a 230 MHz ultrasonic transducer for nondestructive flip chip testing. The reflected time domain signal was captured when the transducer scanning the flip chip, and the image of the flip chip was generated by scanning acoustic microscopy. Normalized cross-correlation was used to locate the center of solder bumps for segmenting the flip chip image. Then five features were extracted from the signals and images. The support vector machine was adopted to process the five features for classification and recognition. The results show the feasibility of this approach with high recognition rate, proving that defect inspection of flip chip solder bumps using the ultrasonic transducer has high potential in microelectronics packaging.

Integrated Inverter For Driving Multiple Electric Machines

DOEpatents

Su, Gui-Jia [Knoxville, TN; Hsu, John S [Oak Ridge, TN

2006-04-04

An electric machine drive (50) has a plurality of inverters (50a, 50b) for controlling respective electric machines (57, 62), which may include a three-phase main traction machine (57) and two-phase accessory machines (62) in a hybrid or electric vehicle. The drive (50) has a common control section (53, 54) for controlling the plurality of inverters (50a, 50b) with only one microelectronic processor (54) for controlling the plurality of inverters (50a, 50b), only one gate driver circuit (53) for controlling conduction of semiconductor switches (S1-S10) in the plurality of inverters (50a, 50b), and also includes a common dc bus (70), a common dc bus filtering capacitor (C1) and a common dc bus voltage sensor (67). The electric machines (57, 62) may be synchronous machines, induction machines, or PM machines and may be operated in a motoring mode or a generating mode.

A self-assembled synthesis of carbon nanotubes for interconnects.

PubMed

Chen, Zexiang; Cao, Guichuan; Lin, Zulun; Koehler, Irmgard; Bachmann, Peter K

2006-02-28

We report a novel approach to grow highly oriented, freestanding and structured carbon nanotubes (CNTs) between two substrates, using microwave plasma chemical vapour deposition. Sandwiched, multi-layered catalyst structures are employed to generate such structures. The as-grown CNTs adhere well to both the substrate and the top contact, and provide a low-resistance electric contact between the two. High-resolution scanning electron microscope (SEM) images show that the CNTs grow perpendicular to these surfaces. This presents a simple way to grow CNTs in different, predetermined directions in a single growth step. The overall resistance of a CNT bundle and two CNT-terminal contacts is measured to be about 14.7 k Ω. The corresponding conductance is close to the quantum limit conductance G(0). This illustrates that our new approach is promising for the direct assembly of CNT-based interconnects in integrated circuits (ICs) or other micro-electronic devices.

RADIANCE PROCESS EVALUATION FOR PARTICLE REMOVAL

EPA Science Inventory

The microelectronics industry (wafer, flat panel displays, photomasks, and storage media) is transitioning to higher device densities and larger substrate formats. These changes will challenge standard cleaning methods and will require significant increases to the fabricator inf...

Design And Implementation Of Integrated Vision-Based Robotic Workcells

NASA Astrophysics Data System (ADS)

Chen, Michael J.

1985-01-01

Reports have been sparse on large-scale, intelligent integration of complete robotic systems for automating the microelectronics industry. This paper describes the application of state-of-the-art computer-vision technology for manufacturing of miniaturized electronic components. The concepts of FMS - Flexible Manufacturing Systems, work cells, and work stations and their control hierarchy are illustrated in this paper. Several computer-controlled work cells used in the production of thin-film magnetic heads are described. These cells use vision for in-process control of head-fixture alignment and real-time inspection of production parameters. The vision sensor and other optoelectronic sensors, coupled with transport mechanisms such as steppers, x-y-z tables, and robots, have created complete sensorimotor systems. These systems greatly increase the manufacturing throughput as well as the quality of the final product. This paper uses these automated work cells as examples to exemplify the underlying design philosophy and principles in the fabrication of vision-based robotic systems.

Ring modulators with enhanced efficiency based on standing-wave operation on a field-matched, interdigitated p-n junction.

PubMed

Pavanello, Fabio; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2016-11-28

We propose ring modulators based on interdigitated p-n junctions that exploit standing rather than traveling-wave resonant modes to improve modulation efficiency, insertion loss and speed. Matching the longitudinal nodes and antinodes of a standing-wave mode with high (contacts) and low (depletion regions) carrier density regions, respectively, simultaneously lowers loss and increases sensitivity significantly. This approach permits further to relax optical constraints on contacts placement and can lead to lower device capacitance. Such structures are well-matched to fabrication in advanced microelectronics CMOS processes. Device architectures that exploit this concept are presented along with their benefits and drawbacks. A temporal coupled mode theory model is used to investigate the static and dynamic response. We show that modulation efficiencies or loss Q factors up to 2 times higher than in previous traveling-wave geometries can be achieved leading to much larger extinction ratios. Finally, we discuss more complex doping geometries that can improve carrier dynamics for higher modulation speeds in this context.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis.

PubMed

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L; Terés, Lluís; Baumann, Reinhard R

2016-09-21

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement.

Fine Collimator Grids Using Silicon Metering Structure

NASA Technical Reports Server (NTRS)

Eberhard, Carol

1998-01-01

The project Fine Collimator Grids Using Silicon Metering Structure was managed by Dr. Carol Eberhard of the Electromagnetic Systems & Technology Department (Space & Technology Division) of TRW who also wrote this final report. The KOH chemical etching of the silicon wafers was primarily done by Dr. Simon Prussin of the Electrical Engineering Department of UCLA at the laboratory on campus. Moshe Sergant of the Superconductor Electronics Technology Department (Electronics Systems & Technology Division) of TRW and Dr. Prussin were instrumental in developing the low temperature silicon etching processes. Moshe Sergant and George G. Pinneo of the Microelectronics Production Department (Electronics Systems & Technology Division) of TRW were instrumental in developing the processes for filling the slots etched in the silicon wafers with metal-filled materials. Their work was carried out in the laboratories at the Space Park facility. Moshe Sergant is also responsible for the impressive array of Scanning Electron Microscope images with which the various processes were monitored. Many others also contributed their time and expertise to the project. I wish to thank them all.

Couches minces supraconductrices à haute température critique pour l'électronique

NASA Astrophysics Data System (ADS)

Guilloux-Viry, M.; Perrin, A.

1998-08-01

High critical temperature superconductors (HTCS) are very promising for applications in microelectronics due to the control of high quality epitaxial thin films, in spite of a number of specific constraints. Active and passive devices are already available in various laboratories, prooving that applications are actually expected soon. We report here on the interest of HTCS thin films, on preparation processes including materials and substrates choice, and also on characterization methods which are required in order to chek the quality of the samples. Finally some illustrative examples of applications are presented. Les supraconducteurs à haute température critique ouvrent des perspectives prometteuses dans le domaine de l'électronique en raison de la maîtrise de la croissance de films minces de haute qualité cristalline et physique, malgré des difficultés spécifiques. Des dispositifs, aussi bien actifs que passifs, commencent à être réalisés dans divers laboratoires, montrant que des applications peuvent être effectivement envisagées à relativement court terme.

Accurate reconstruction in digital holographic microscopy using Fresnel dual-tree complex wavelet transform

NASA Astrophysics Data System (ADS)

Zhang, Xiaolei; Zhang, Xiangchao; Yuan, He; Zhang, Hao; Xu, Min

2018-02-01

Digital holography is a promising measurement method in the fields of bio-medicine and micro-electronics. But the captured images of digital holography are severely polluted by the speckle noise because of optical scattering and diffraction. Via analyzing the properties of Fresnel diffraction and the topographies of micro-structures, a novel reconstruction method based on the dual-tree complex wavelet transform (DT-CWT) is proposed. This algorithm is shiftinvariant and capable of obtaining sparse representations for the diffracted signals of salient features, thus it is well suited for multiresolution processing of the interferometric holograms of directional morphologies. An explicit representation of orthogonal Fresnel DT-CWT bases and a specific filtering method are developed. This method can effectively remove the speckle noise without destroying the salient features. Finally, the proposed reconstruction method is compared with the conventional Fresnel diffraction integration and Fresnel wavelet transform with compressive sensing methods to validate its remarkable superiority on the aspects of topography reconstruction and speckle removal.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Modeling of low pressure plasma sources for microelectronics fabrication

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Bera, Kallol; Kenney, Jason; Likhanskii, Alexandre; Rauf, Shahid

2017-10-01

Chemically reactive plasmas operating in the 1 mTorr-10 Torr pressure range are widely used for thin film processing in the semiconductor industry. Plasma modeling has come to play an important role in the design of these plasma processing systems. A number of 3-dimensional (3D) fluid and hybrid plasma modeling examples are used to illustrate the role of computational investigations in design of plasma processing hardware for applications such as ion implantation, deposition, and etching. A model for a rectangular inductively coupled plasma (ICP) source is described, which is employed as an ion source for ion implantation. It is shown that gas pressure strongly influences ion flux uniformity, which is determined by the balance between the location of plasma production and diffusion. The effect of chamber dimensions on plasma uniformity in a rectangular capacitively coupled plasma (CCP) is examined using an electromagnetic plasma model. Due to high pressure and small gap in this system, plasma uniformity is found to be primarily determined by the electric field profile in the sheath/pre-sheath region. A 3D model is utilized to investigate the confinement properties of a mesh in a cylindrical CCP. Results highlight the role of hole topology and size on the formation of localized hot-spots. A 3D electromagnetic plasma model for a cylindrical ICP is used to study inductive versus capacitive power coupling and how placement of ground return wires influences it. Finally, a 3D hybrid plasma model for an electron beam generated magnetized plasma is used to understand the role of reactor geometry on plasma uniformity in the presence of E  ×  B drift.

Development of micromachine tool prototypes for microfactories

NASA Astrophysics Data System (ADS)

Kussul, E.; Baidyk, T.; Ruiz-Huerta, L.; Caballero-Ruiz, A.; Velasco, G.; Kasatkina, L.

2002-11-01

At present, many areas of industry have strong tendencies towards miniaturization of products. Mechanical components of these products as a rule are manufactured using conventional large-scale equipment or micromechanical equipment based on microelectronic technology (MEMS). The first method has some drawbacks because conventional large-scale equipment consumes much energy, space and material. The second method seems to be more advanced but has some limitations, for example, two-dimensional (2D) or 2.5-dimensional shapes of components and materials compatible with silicon technology. In this paper, we consider an alternative technology of micromechanical device production. This technology is based on micromachine tools (MMT) and microassembly devices, which can be produced as sequential generations of microequipment. The first generation can be produced by conventional large-scale equipment. The machine tools of this generation can have overall sizes of 100-200 mm. Using microequipment of this generation, second generation microequipment having smaller overall sizes can be produced. This process can be repeated to produce generations of micromachine tools having overall sizes of some millimetres. In this paper we describe the efforts and some results of first generation microequipment prototyping. A micromachining centre having an overall size of 130 × 160 × 85 mm3 was produced and characterized. This centre has allowed us to manufacture micromechanical details having sizes from 50 µm to 5 mm. These details have complex three-dimensional shapes (for example, screw, gear, graduated shaft, conic details, etc), and are made from different materials, such as brass, steel, different plastics etc. We have started to investigate and to make prototypes of the assembly microdevices controlled by a computer vision system. In this paper we also describe an example of the applications (microfilters) for the proposed technology.

Thermal-Wave Imaging.

ERIC Educational Resources Information Center

Rosencwaig, Allan

1982-01-01

Thermal features of and beneath the surface of a sample can be detected and imaged with a thermal-wave microscope. Various methodologies for the excitation and detection of thermal waves are discussed, and several applications, primarily in microelectronics, are presented. (Author)

NOVEL SYNTHETIC METHOD FOR NARROW DISTRIBUTED COLLOIDAL SILICALITE

EPA Science Inventory

Preparation of zeolites is important for a variety of applications such as microelectronics, separation agents, ion exchange, catalysis, adsorbents, nanocomposites and zeolite membranes. Silicalite-1 is a crystalline, microporous polymorph of silicon dioxide with the MFI framewo...

Resources in Technology.

ERIC Educational Resources Information Center

McCrory, David L.; Maughan, George R.

This document--intended for secondary school and college students--contains technology education instructional units on engines and power, energy conversion, energy futures, energy sources, communication and society, energy and power in communication, communication systems, microelectronics in communication, transportation in society, energy and…

Calculation of cosmic ray induced single event upsets: Program CRUP (Cosmic Ray Upset Program)

NASA Astrophysics Data System (ADS)

Shapiro, P.

1983-09-01

This report documents PROGRAM CRUP, COSMIC RAY UPSET PROGRAM. The computer program calculates cosmic ray induced single-event error rates in microelectronic circuits exposed to several representative cosmic-ray environments.

Design, processing and testing of LSI arrays hybrid microelectronics task

NASA Technical Reports Server (NTRS)

Himmel, R. P.; Stuhlbarg, S. M.; Salmassy, S.

1978-01-01

Those factors affecting the cost of electronic subsystems utilizing LSI microcircuits were determined and the most efficient methods for low cost packaging of LSI devices as a function of density and reliability were developed.

Risk Management of Microelectronics: The NASA Electronic Parts and Packaging (NEPP) Program

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2005-01-01

This viewgraph information provides information on how the NASA Electronic Parts and Packaging (NEPP) Program evaluates the reliability of technologies for Electrical, Electronic, and Electromechanical (EEE) parts, and their suitability for spacecraft applications.

Microelectronic DNA assay for the detection of BRCA1 gene mutations

NASA Technical Reports Server (NTRS)

Chen, Hua; Han, Jie; Li, Jun; Meyyappan, Meyya

2004-01-01

Mutations in BRCA1 are characterized by predisposition to breast cancer, ovarian cancer and prostate cancer as well as colon cancer. Prognosis for this cancer survival depends upon the stage at which cancer is diagnosed. Reliable and rapid mutation detection is crucial for the early diagnosis and treatment. We developed an electronic assay for the detection of a representative single nucleotide polymorphism (SNP), deletion and insertion in BRCA1 gene by the microelectronics microarray instrumentation. The assay is rapid, and it takes 30 minutes for the immobilization of target DNA samples, hybridization, washing and readout. The assay is multiplexing since it is carried out at the same temperature and buffer conditions for each step. The assay is also highly specific, as the signal-to-noise ratio is much larger than recommended value (72.86 to 321.05 vs. 5) for homozygotes genotyping, and signal ratio close to the perfect value 1 for heterozygotes genotyping (1.04).

Engineering brain-computer interfaces: past, present and future.

PubMed

Hughes, M A

2014-06-01

Electricity governs the function of both nervous systems and computers. Whilst ions move in polar fluids to depolarize neuronal membranes, electrons move in the solid-state lattices of microelectronic semiconductors. Joining these two systems together, to create an iono-electric brain-computer interface, is an immense challenge. However, such interfaces offer (and in select clinical contexts have already delivered) a method of overcoming disability caused by neurological or musculoskeletal pathology. To fulfill their theoretical promise, several specific challenges demand consideration. Rate-limiting steps cover a diverse range of disciplines including microelectronics, neuro-informatics, engineering, and materials science. As those who work at the tangible interface between brain and outside world, neurosurgeons are well placed to contribute to, and inform, this cutting edge area of translational research. This article explores the historical background, status quo, and future of brain-computer interfaces; and outlines the challenges to progress and opportunities available to the clinical neurosciences community.

Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

2002-01-01

An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

Image analysis for microelectronic retinal prosthesis.

PubMed

Hallum, L E; Cloherty, S L; Lovell, N H

2008-01-01

By way of extracellular, stimulating electrodes, a microelectronic retinal prosthesis aims to render discrete, luminous spots-so-called phosphenes-in the visual field, thereby providing a phosphene image (PI) as a rudimentary remediation of profound blindness. As part thereof, a digital camera, or some other photosensitive array, captures frames, frames are analyzed, and phosphenes are actuated accordingly by way of modulated charge injections. Here, we present a method that allows the assessment of image analysis schemes for integration with a prosthetic device, that is, the means of converting the captured image (high resolution) to modulated charge injections (low resolution). We use the mutual-information function to quantify the amount of information conveyed to the PI observer (device implantee), while accounting for the statistics of visual stimuli. We demonstrate an effective scheme involving overlapping, Gaussian kernels, and discuss extensions of the method to account for shortterm visual memory in observers, and their perceptual errors of omission and commission.

Active Microelectronic Neurosensor Arrays for Implantable Brain Communication Interfaces

PubMed Central

Song, Y.-K.; Borton, D. A.; Park, S.; Patterson, W. R.; Bull, C. W.; Laiwalla, F.; Mislow, J.; Simeral, J. D.; Donoghue, J. P.; Nurmikko, A. V.

2010-01-01

We have built a wireless implantable microelectronic device for transmitting cortical signals transcutaneously. The device is aimed at interfacing a microelectrode array cortical to an external computer for neural control applications. Our implantable microsystem enables presently 16-channel broadband neural recording in a non-human primate brain by converting these signals to a digital stream of infrared light pulses for transmission through the skin. The implantable unit employs a flexible polymer substrate onto which we have integrated ultra-low power amplification with analog multiplexing, an analog-to-digital converter, a low power digital controller chip, and infrared telemetry. The scalable 16-channel microsystem can employ any of several modalities of power supply, including via radio frequency by induction, or infrared light via a photovoltaic converter. As of today, the implant has been tested as a sub-chronic unit in non-human primates (~ 1 month), yielding robust spike and broadband neural data on all available channels. PMID:19502132

DUV phase mask for 100 nm period grating printing

NASA Astrophysics Data System (ADS)

Jourlin, Y.; Bourgin, Y.; Reynaud, S.; Parriaux, O.; Talneau, A.; Karvinen, P.; Passilly, N.; Zain, A. Md.; De La Rue, R. M.

2008-04-01

Whereas microelectronic lithography is heading to the 32 nm node and discussing immersion and double-patterning strategies, there is much which can be done with the 45 nm node in microoptics for white light processing. For instance, one of the most demanding applications in terms of achievable period is the LCD lossless polarizer, which can transmit the TM polarization and reflect the TE polarization evenly all through the visible spectrum - provided that a 1D metal grid of 100 nm period can be fabricated. The manufacture of such polarizing panels cannot resort to the step & repeat cameras of microelectronics since the substrates are too large, too thin, too wavy and full of contaminants. There is therefore a need for specific fabrication techniques. It is one of these techniques that a subgroup of partners belonging to two of the Networks of Excellence of the European Community, NEMO and ePIXnet, have decided to explore together.

High peak power solid-state laser for micromachining of hard materials

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Quitter, John P.; Ray, Gregory M.; Kuntze, Thomas; Wiessner, Alexander O.; Govorkov, Sergei V.; Heglin, Mike

2003-06-01

Laser micromachining has become a key enabling technology in the ever-continuing trend of miniaturization in microelectronics, micro-optics, and micromechanics. New applications have become commercially viable due to the emergence of innovative laser sources, such as diode pumped solid-state lasers (DPSSL), and the progress in processing technology. Examples of industrial applications are laser-drilled micro-injection nozzles for highly efficient automobile engines, or manufacturing of complex spinnerets for production of synthetic fibers. The unique advantages of laser-based techniques stem from their ability to produce high aspect ratio holes, while yielding low heat affected zones with exceptional surface quality, roundness and taper tolerances. Additionally, the ability to drill blind holes and slots in very hard materials such as diamond, silicon, sapphire, ceramics and steel is of great interest for many applications in microelectronics, semiconductor and automotive industry. This kind of high quality, high aspect ratio micromachining requires high peak power and short pulse durations.

Nanoscale temperature mapping in operating microelectronic devices

DOE PAGES

Mecklenburg, Matthew; Hubbard, William A.; White, E. R.; ...

2015-02-05

We report that modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope (STEM) and electron energy loss spectroscopy (EELS), we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with amore » statistical precision of 3 kelvin/hertz ₋1/2, an accuracy of 10%, and nanometer-scale resolution. Lastly, many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.« less

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Integrated microelectronics for smart textiles.

PubMed

Lauterbach, Christl; Glaser, Rupert; Savio, Domnic; Schnell, Markus; Weber, Werner

2005-01-01

The combination of textile fabrics with microelectronics will lead to completely new applications, thus achieving elements of ambient intelligence. The integration of sensor or actuator networks, using fabrics with conductive fibres as a textile motherboard enable the fabrication of large active areas. In this paper we describe an integration technology for the fabrication of a "smart textile" based on a wired peer-to-peer network of microcontrollers with integrated sensors or actuators. A self-organizing and fault-tolerant architecture is accomplished which detects the physical shape of the network. Routing paths are formed for data transmission, automatically circumventing defective or missing areas. The network architecture allows the smart textiles to be produced by reel-to-reel processes, cut into arbitrary shapes subsequently and implemented in systems at low installation costs. The possible applications are manifold, ranging from alarm systems to intelligent guidance systems, passenger recognition in car seats, air conditioning control in interior lining and smart wallpaper with software-defined light switches.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film.

PubMed

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-22

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

PubMed Central

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses. PMID:26795601

A Wireless Multi-Sensor Dielectric Impedance Spectroscopy Platform

PubMed Central

Ghaffari, Seyed Alireza; Caron, William-O.; Loubier, Mathilde; Rioux, Maxime; Viens, Jeff; Gosselin, Benoit; Messaddeq, Younes

2015-01-01

This paper describes the development of a low-cost, miniaturized, multiplexed, and connected platform for dielectric impedance spectroscopy (DIS), designed for in situ measurements and adapted to wireless network architectures. The platform has been tested and used as a DIS sensor node on ZigBee mesh and was able to interface up to three DIS sensors at the same time and relay the information through the network for data analysis and storage. The system is built from low-cost commercial microelectronics components, performs dielectric spectroscopy ranging from 5 kHz to 100 kHz, and benefits from an on-the-fly calibration system that makes sensor calibration easy. The paper describes the microelectronics design, the Nyquist impedance response, the measurement sensitivity and accuracy, and the testing of the platform for in situ dielectric impedance spectroscopy applications pertaining to fertilizer sensing, water quality sensing, and touch sensing. PMID:26393587

Spatial light modulator array with heat minimization and image enhancement features

DOEpatents

Jain, Kanti [Briarcliff Manor, NY; Sweatt, William C [Albuquerque, NM; Zemel, Marc [New Rochelle, NY

2007-01-30

An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

NASA Astrophysics Data System (ADS)

Lee, Seung Hee; Singh, Dhruv Pratap; Sung, Ji Ho; Jo, Moon-Ho; Kwon, Ki Chang; Kim, Soo Young; Jang, Ho Won; Kim, Jong Kyu

2016-01-01

A highly efficient circularly-polarized-light detector with excellent wavelength selectivity is demonstrated with an elegant and simple microelectronics-compatible way. The circularly-polarized-light detector based on a proper combination of the geometry-controlled TiO2-SnO2 hetero-chiral thin film as an effective chiroptical filter and the Si active layer shows excellent chiroptical response with external quantum efficiency as high as 30% and high helicity selectivity of ~15.8% in an intended wavelength range. Furthermore, we demonstrated the ability of manipulating both bandwidth and responsivity of the detector simultaneously in whole visible wavelength range by a precise control over the geometry and materials constituting hetero-chiral thin film. The high efficiency, wavelength selectivity and compatibility with conventional microelectronics processes enabled by the proposed device can result in remarkable developments in highly integrated photonic platforms utilizing chiroptical responses.

Wetting properties of Au/Sn solders for microelectronics

NASA Astrophysics Data System (ADS)

Peterson, K. A.; Williams, C. B.

Hermetic sealing of microelectronic packages with Au/Sn solder is critically dependent upon good wetting. In studying specific problems in hermetic sealing, a solderability test based on ASTM standard F-357-78 has proven useful. The test has helped isolate and quantify the effects of contamination due to epoxy die attach and related handling, thermal preconditioning of packages, gold plating thickness, time and temperature during sealing, and solder alloy composition as they affect wetting. Some differences in hardware have been documented between manufacturing lots, but the overriding factors have been contamination which occurs during packaging process flows and thermal preconditioning during processing. The paper includes a review of metallurgical aspects of soldering to a non-inert surface and an examination of microstructural differences in seal joints. The results also quantify the conventional wisdom that alloys which are on the tin-rich side of the eutectic composition offer superior wetting properties.

Nanophotonic applications for silicon-on-insulator (SOI)

NASA Astrophysics Data System (ADS)

de la Houssaye, Paul R.; Russell, Stephen D.; Shimabukuro, Randy L.

2004-07-01

Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world. This paper will report on fabrication techniques used to form nano-structured silicon wires on an insulating structure that is amenable to interfacing nanostructured sensors with high-performance microelectronic circuitry for practical implementation. Nanostructures formed on silicon-on-sapphire can also exploit the transparent substrate for novel device geometries. This research harnesses the unique properties of a high-quality single crystal film of silicon on sapphire and uses the film thickness as one of the confinement dimensions. Lateral arrays of silicon nanowires were fabricated in the thin (5 to 20 nm) silicon layer and studied. This technique offers simplified contact to individual wires and provides wire surfaces that are more readily accessible for controlled alteration and device designs.

West Europe report: Science and technology. FRG: Concept paper on microelectronics, communications technology

NASA Astrophysics Data System (ADS)

1984-07-01

Precisely because the Federal Republic of Germany is a nation with a strong export orientation the capability to develop and apply, with an eye to the market, modern information and communication technologies and microelectronics which provides the basis for them has a very important bearing on the nations competitive position. To attain a leadership position in information technology, the men and women of the FRG must take up the challenge of this technology in terms of training and continuing education as well as in the media and in public life. Industry must agressively seek out markets and engage in international competition and the state must remove existing obstacles and create the kind of conditions that will make its assistance programs most effective. Programs which reflect the government's resolve to meet the challenge of information technology and to help improve the FRG's competitive position in this field are outlined.

Microelectronics, radiation, and superconductivity.

PubMed Central

Gochfeld, M

1990-01-01

Among the costs of technology are health hazards that face employees and consumers. New advances in the highly competitive field of microelectronics involve exposure to a variety of hazards such as gallium arsenide. Small high-technology industries appear unprepared to invest in health and safety. Although stray electromagnetic fields are not a new development, researchers are beginning to assemble data indicating that such fields pose a significant cancer risk under certain circumstances. Data have been obtained on fields associated with power lines on the one hand and consumer products on the other. Although not conclusive, the data are sufficient to warrant carefully designed research into the risks posed by electromagnetic fields. Because the scientific issues require research, there is a need to make basic social value decisions that will determine which technologies will be developed and which ones may be set aside because of their danger at the present time. PMID:2401267

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

PubMed Central

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-01-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

Scalable sub-micron patterning of organic materials toward high density soft electronics

DOE PAGES

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Sandia technology: Engineering and science applications

NASA Astrophysics Data System (ADS)

Maydew, M. C.; Parrot, H.; Dale, B. C.; Floyd, H. L.; Leonard, J. A.; Parrot, L.

1990-12-01

This report discusses: protecting environment, safety, and health; Sandia's quality initiative; Sandia vigorously pursues technology transfer; scientific and technical education support programs; nuclear weapons development; recognizing battlefield targets with trained artificial neural networks; battlefield robotics: warfare at a distance; a spinning shell sizes up the enemy; thwarting would-be nuclear terrorists; unattended video surveillance system for nuclear facilities; making the skies safer for travelers; onboard instrumentation system to evaluate performance of stockpile bombs; keeping track with lasers; extended-life lithium batteries; a remote digital video link acquires images securely; guiding high-performance missiles with laser gyroscopes; nonvolatile memory chips for space applications; initiating weapon explosives with lasers; next-generation optoelectronics and microelectronics technology developments; chemometrics: new methods for improving chemical analysis; research team focuses ion beam to record-breaking intensities; standardizing the volt to quantum accuracy; new techniques improve robotic software development productivity; a practical laser plasma source for generating soft x-rays; exploring metal grain boundaries; massively parallel computing; modeling the amount of desiccant needed for moisture control; attacking pollution with sunshine; designing fuel-conversion catalysts with computers; extending a nuclear power plant's useful life; plasma-facing components for the International Thermonuclear Experimental Reactor.

PICSiP: new system-in-package technology using a high bandwidth photonic interconnection layer for converged microsystems

NASA Astrophysics Data System (ADS)

Tekin, Tolga; Töpper, Michael; Reichl, Herbert

2009-05-01

Technological frontiers between semiconductor technology, packaging, and system design are disappearing. Scaling down geometries [1] alone does not provide improvement of performance, less power, smaller size, and lower cost. It will require "More than Moore" [2] through the tighter integration of system level components at the package level. System-in-Package (SiP) will deliver the efficient use of three dimensions (3D) through innovation in packaging and interconnect technology. A key bottleneck to the implementation of high-performance microelectronic systems, including SiP, is the lack of lowlatency, high-bandwidth, and high density off-chip interconnects. Some of the challenges in achieving high-bandwidth chip-to-chip communication using electrical interconnects include the high losses in the substrate dielectric, reflections and impedance discontinuities, and susceptibility to crosstalk [3]. Obviously, the incentive for the use of photonics to overcome the challenges and leverage low-latency and highbandwidth communication will enable the vision of optical computing within next generation architectures. Supercomputers of today offer sustained performance of more than petaflops, which can be increased by utilizing optical interconnects. Next generation computing architectures are needed with ultra low power consumption; ultra high performance with novel interconnection technologies. In this paper we will discuss a CMOS compatible underlying technology to enable next generation optical computing architectures. By introducing a new optical layer within the 3D SiP, the development of converged microsystems, deployment for next generation optical computing architecture will be leveraged.

Maximizing direct current power delivery from bistable vibration energy harvesting beams subjected to realistic base excitations

NASA Astrophysics Data System (ADS)

Dai, Quanqi; Harne, Ryan L.

2017-04-01

Effective development of vibration energy harvesters is required to convert ambient kinetic energy into useful electrical energy as power supply for sensors, for example in structural health monitoring applications. Energy harvesting structures exhibiting bistable nonlinearities have previously been shown to generate large alternating current (AC) power when excited so as to undergo snap-through responses between stable equilibria. Yet, most microelectronics in sensors require rectified voltages and hence direct current (DC) power. While researchers have studied DC power generation from bistable energy harvesters subjected to harmonic excitations, there remain important questions as to the promise of such harvester platforms when the excitations are more realistic and include both harmonic and random components. To close this knowledge gap, this research computationally and experimentally studies the DC power delivery from bistable energy harvesters subjected to such realistic excitation combinations as those found in practice. Based on the results, it is found that the ability for bistable energy harvesters to generate peak DC power is significantly reduced by introducing sufficient amount of stochastic excitations into an otherwise harmonic input. On the other hand, the elimination of a low amplitude, coexistent response regime by way of the additive noise promotes power delivery if the device was not originally excited to snap-through. The outcomes of this research indicate the necessity for comprehensive studies about the sensitivities of DC power generation from bistable energy harvester to practical excitation scenarios prior to their optimal deployment in applications.

Biomedical sensing and display concept improves brain wave monitoring

NASA Technical Reports Server (NTRS)

Trent, R. L.

1970-01-01

Concept for increasing effectiveness of biomedical sensing and display promises greater monitoring capability while lessening high skill requirements in operating personnel. New concept overcomes deficiencies of current system by employing increased number of probes and microelectronic preamplifiers.

Two autowire versions for CDC-3200 and IBM-360

NASA Technical Reports Server (NTRS)

Billingsley, J. B.

1972-01-01

Microelectronics program was initiated to evaluate circuitry, packaging methods, and fabrication approaches necessary to produce completely procured logic system. Two autowire programs were developed for CDC-3200 and IBM-360 computers for use in designing logic systems.

Adaptive Mesh Refinement for Microelectronic Device Design

NASA Technical Reports Server (NTRS)

Cwik, Tom; Lou, John; Norton, Charles

1999-01-01

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Role of field-induced nanostructures, zippering and size polydispersity on effective thermal transport in magnetic fluids without significant viscosity enhancement

NASA Astrophysics Data System (ADS)

Vinod, Sithara; Philip, John

2017-12-01

Magnetic nanofluids or ferrofluids exhibit extraordinary field dependant tunable thermal conductivity (k), which make them potential candidates for microelectronic cooling applications. However, the associated viscosity enhancement under an external stimulus is undesirable for practical applications. Further, the exact mechanism of heat transport and the role of field induced nanostructures on thermal transport is not clearly understood. In this paper, through systematic thermal, rheological and microscopic studies in 'model ferrofluids', we demonstrate for the first time, the conditions to achieve very high thermal conductivity to viscosity ratio. Highly stable ferrofluids with similar crystallite size, base fluid, capping agent and magnetic properties, but with slightly different size distributions, are synthesized and characterized by X-ray diffraction, small angle X-ray scattering, transmission electron microscopy, dynamic light scattering, vibrating sample magnetometer, Fourier transform infrared spectroscopy and thermo-gravimetry. The average hydrodynamic diameters of the particles were 11.7 and 10.1 nm and the polydispersity indices (σ), were 0.226 and 0.151, respectively. We observe that the system with smaller polydispersity (σ = 0.151) gives larger k enhancement (130% for 150 G) as compared to the one with σ = 0.226 (73% for 80 G). Further, our results show that dispersions without larger aggregates and with high density interfacial capping (with surfactant) can provide very high enhancement in thermal conductivity, with insignificant viscosity enhancement, due to minimal interfacial losses. We also provide experimental evidence for the effective heat conduction (parallel mode) through a large number of space filling linear aggregates with high aspect ratio. Microscopic studies reveal that the larger particles act as nucleating sites and facilitate lateral aggregation (zippering) of linear chains that considerably reduces the number density of space filling linear aggregates. Our findings are very useful for optimizing the heat transfer properties of magnetic fluids (and also in composite systems consisting of CNT, graphene etc.) for the development of next generation microelectronic cooling technologies, thermal energy harvesting and magnetic fluid based therapeutics.

Microtechnology in Telecommunications for Spacecraft Cost and Mass Reduction

NASA Technical Reports Server (NTRS)

Herman, M. I.; Burkhart, S.; Crist, R.; Vacchione, J.; Hughes, R.; Kellogg, K.; Kermode, A.; Rascoe, D.; Hornbuckle, C.; Hoffmann, W.;

Science and Technological Innovation.

ERIC Educational Resources Information Center

Braun, Ernest

1979-01-01

This article is based on a presentation at the 1979 conference of the Education Group of The Institute of Physics which was held in Cambridge, England. It discusses the interaction between science and technological innovation using a historical approach: the development of microelectronics. (HM)

Information Retrieval Research and ESPRIT.

ERIC Educational Resources Information Center

Smeaton, Alan F.

1987-01-01

Describes the European Strategic Programme of Research and Development in Information Technology (ESPRIT), and its five programs: advanced microelectronics, software technology, advanced information processing, office systems, and computer integrated manufacturing. The emphasis on logic programming and ESPRIT as the European response to the…

Science Education Notes.

ERIC Educational Resources Information Center

School Science Review, 1983

1983-01-01

Discusses current topics in science education including increasing adult education through innovation in course planning/recruitment methods, a course in microelectronics/digital control, and need for increased human genetics topics in biology/health education. Also discusses changing role of biology teachers, preschool science, and teaching a…

Information Systems and Development in the Third World.

ERIC Educational Resources Information Center

Heitzman, James

1990-01-01

Discussion of the relationship between information and development in Third World countries highlights information systems development in four South Asian nations: India, Pakistan, Sri Lanka, and Bangladesh. The impact of microelectronics technology, development theories, multinational corporations, international information agencies, and…

CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code

NASA Technical Reports Server (NTRS)

Adams, James H., Jr.; Barghouty, Abdulnasser F.; Reed, Robert A.; Sierawski, Brian D.; Watts, John W., Jr.

2012-01-01

We describe a tool suite, CREME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models and new Monte Carlo computational capabilities for single event effects and total ionizing dose.

Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.; Xapsos, M. A.; LaBel, K. A.; Marshall, P. W.; Heidel, D. F.; Rodbell, K. P.; Hakey, M. C.; Dodd, P. E.; Shaneyfelt, M. R.; Schwank, J. R.;

Microelectronic bioinstrumentation systems

NASA Technical Reports Server (NTRS)

Ko, W. H.

1976-01-01

Progress was made in the development of an RF cage, a single channel RF powered ECG telemetry system, and a three channel RF powered ECG, aortic blood pressure, and body temperature telemetry system. Encapsulation materials for chronic implantation of electronic circuits in the body were also evaluated.

Artwork Interactive Design System (AIDS) program description

NASA Technical Reports Server (NTRS)

Johnson, B. T.; Taylor, J. F.

1976-01-01

An artwork interactive design system is described which provides the microelectronic circuit designer/engineer a tool to perform circuit design, automatic layout modification, standard cell design, and artwork verification at a graphics computer terminal using a graphics tablet at the designer/computer interface.

On-Campus Projects: Inventing a Microchip.

ERIC Educational Resources Information Center

Basta, Nicholas

1985-01-01

In response to growth of microelectronics and changes in microchip design/manufacturing technology, universities are supporting class projects for students. Approximately 50 schools now conduct such programs which have resulted from earlier National Science Foundation sponsorship. Major advantages for the students include designing experience,…

Flight Experiments for Living With a Star Space Environment Testbed (LWS-SET): Relationship to Technology

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Barth, Janet L.; Brewer, Dana A.

2003-01-01

This viewgraph presentation provides information on flight validation experiments for technologies to determine solar effects. The experiments are intended to demonstrate tolerance to a solar variant environment. The technologies tested are microelectronics, photonics, materials, and sensors.

Applicability of microelectronic and mechanical systems (MEMS) for transportation infrastructure management.

DOT National Transportation Integrated Search

2008-08-11

It will be advantageous to have information on the state of health of infrastructure at all times in : order to carry out effective on-demand maintenance. With the tremendous advancement in technology, it is : possible to employ devices embedded in s...

Design and characterization of single photon avalanche diodes arrays

NASA Astrophysics Data System (ADS)

Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2010-05-01

During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

WORK SITE CLINICAL AND NEUROBEHAVIORAL ASSESSMENT OF SOLVENT EXPOSED MICROELECTRONICS WORKERS

EPA Science Inventory

A group of 25 workers currently (5), or formerly (20), involved in the manufacture of hybrid microcircuits underwent clinical evaluations at the request of a management-union committee concerned about chronic solvent exposures in a research and development laboratory. attery of n...

IEEE WMED 2016 Homepage

Science.gov Websites

characterization, design, and new device technologies. This workshop will consist of invited talks, contributed and Reliability Semiconductor package reliability, Design for Manufacturability, Stacked die packaging and Novel assembly processes Microelectronic Circuit Design New product design, high-speed and/or low

Panel I: Technology and Jobs.

ERIC Educational Resources Information Center

Appalachia, 1984

1984-01-01

Panel I features two case histories of state government, university, and private corporation cooperation to bring technology to the workplace (Microelectronics Center of North Carolina and Ben Franklin Partnership Program) and presentations about Burlington Industries and General Electric Company investments in technology to save jobs and boost…

Investigation of low glass transition temperature on COTS PEM's reliability for space applications

NASA Technical Reports Server (NTRS)

Sandor, M.; Agarwal, S.; Peters, D.; Cooper, M. S.

2003-01-01

Plastic Encapsulated Microelectronics (PEM) reliability is affected by many factors. Glass transition temperature (Tg) is one such factor. In this presentation issues relating to PEM reliability and the effect of low glass transition temperature epoxy mold compounds are presented.

Simple Chemical Vapor Deposition Experiment

ERIC Educational Resources Information Center

Pedersen, Henrik

2014-01-01

Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

Solid state microdosimeter for radiation monitoring in spacecraft and avionics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, D.R.; McNulty, P.J.; Beauvais, W.J.

1994-12-01

An instrument is described which is designed to characterize the complex radiation environments inside spacecraft and airplanes in terms of the risk of SEEs in the present and planned microelectronic systems and in terms of the risk to flight crews and passengers.

High Technology and Job Loss.

ERIC Educational Resources Information Center

Rumberger, Russell

Job loss through technological advancement, particularly technologies based on microelectronics, is increasing for all economic sectors in a nation already hard challenged in world and domestic markets for goods and services. But assessing technology's employment impact remains difficult not only because of its direct and indirect effects and…

Innovations in microelectronics and solid state at North Carolina Agricultural and Technical State University

NASA Technical Reports Server (NTRS)

Williams, L., Jr.

1977-01-01

Research in the following areas is described: (1) Characterization and applications of metallic oxide devices; (2) Electronic properties and energy conversion in organic amorphous semiconductors; (3) Material growth and characterization directed toward improving 3-5 heterojunction solar cells.

Computational Physics for Space Flight Applications

NASA Technical Reports Server (NTRS)

Reed, Robert A.

2004-01-01

This paper presents viewgraphs on computational physics for space flight applications. The topics include: 1) Introduction to space radiation effects in microelectronics; 2) Using applied physics to help NASA meet mission objectives; 3) Example of applied computational physics; and 4) Future directions in applied computational physics.

Methodology of Education and R&D in Mechatronics.

ERIC Educational Resources Information Center

Yamazaki, K.; And Others

1985-01-01

Describes the concept and methodology of "mechatronics" (application of microelectronics to mechanism control) and research and development (R&D) projects through the activities initiated at the Precision Machining Laboratory of the Department of Production Systems Engineering of the new Toyohashi University of Technology. (JN)

Stroboscopic Imaging Interferometer for MEMS Performance Measurement

DTIC Science & Technology

2007-07-15

Optical Iocusing L.aser Fiber Optics I) c 0 Mim er Collimator - C d Microcope lcam. indo Cold Objcclive Splitte FingerCCD "Mount irnro MEMS PicL zStack...Electronics and Photonics Laboratory: Microelectronics, VLSI reliability, failure analysis, solid-state device physics, compound semiconductors

Unusual Applications of Ultrasound in Industry

NASA Astrophysics Data System (ADS)

Keilman, George

The application of physical acoustics in industry has been accelerated by increased understanding of the physics of industrial processes, coupled with rapid advancements in transducers, microelectronics, data acquisition, signal processing, and related software fields. This has led to some unusual applications of ultrasound to improve industrial processes.

Fabrication of planarised conductively patterned diamond for bio-applications.

PubMed

Tong, Wei; Fox, Kate; Ganesan, Kumaravelu; Turnley, Ann M; Shimoni, Olga; Tran, Phong A; Lohrmann, Alexander; McFarlane, Thomas; Ahnood, Arman; Garrett, David J; Meffin, Hamish; O'Brien-Simpson, Neil M; Reynolds, Eric C; Prawer, Steven

2014-10-01

The development of smooth, featureless surfaces for biomedical microelectronics is a challenging feat. Other than the traditional electronic materials like silicon, few microelectronic circuits can be produced with conductive features without compromising the surface topography and/or biocompatibility. Diamond is fast becoming a highly sought after biomaterial for electrical stimulation, however, its inherent surface roughness introduced by the growth process limits its applications in electronic circuitry. In this study, we introduce a fabrication method for developing conductive features in an insulating diamond substrate whilst maintaining a planar topography. Using a combination of microwave plasma enhanced chemical vapour deposition, inductively coupled plasma reactive ion etching, secondary diamond growth and silicon wet-etching, we have produced a patterned substrate in which the surface roughness at the interface between the conducting and insulating diamond is approximately 3 nm. We also show that the patterned smooth topography is capable of neuronal cell adhesion and growth whilst restricting bacterial adhesion. Copyright © 2014 Elsevier B.V. All rights reserved.

A production parylene coating process for hybrid microcircuits

NASA Technical Reports Server (NTRS)

Kale, V. S.; Riley, T. J.

1977-01-01

The real impetus for developing a production parylene coating process for internal hybrid passivation came as a result of the possibility of loose conductive particles in hybrid microelectronic circuits, causing intermittent and sometimes permanent failures. Because of the excellent mechanical properties of parylene, it is capable of securing the loose particles in place and prevent such failures. The process of coating described consists of (1) vaporizing the initial charge, which is in the form of a dimer; (2) conversion of the dimer into a reactive monomer; and (3) deposition and subsequent polymerization of the monomer in the deposition chamber which forms a uniform parylene film over all the cold surfaces in contact. Experimental results are discussed in terms of wire bond reliability, resistor drift, high-temperature storage characteristics of parylene, and coating acceptance standards. It is concluded that internal cavities of microelectronic circuits can be successfully coated with parylene provided appropriate tooling is used to protect external leads from the parylene monomer.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

FBIS report. Science and technology: Europe/International, March 29, 1996

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1996-03-29

;Partial Contents: Advanced Materials (EU Project to Improve Production in Metal Matrix Compounds Noted, Germany: Extremely Hard Carbon Coating Development, Italy: Director of CNR Metallic Materials Institute Interviewed); Aerospace (ESA Considers Delays, Reductions as Result of Budget Cuts, Italy: Space Agency`s Director on Restructuring, Future Plans); Automotive, Transportation (EU: Clean Diesel Engine Technology Research Reviewed); Biotechnology (Germany`s Problems, Successes in Biotechnology Discussed); Computers (EU Europort Parallel Computing Project Concluded, Italy: PQE 2000 Project on Massively Parallel Systems Viewed); Defense R&D (France: Future Tasks of `Brevel` Military Intelligence Drone Noted); Energy, Environment (German Scientist Tests Elimination of Phosphates); Advanced Manufacturing (France:more » Advanced Rapid Prototyping System Presented); Lasers, Sensors, Optics (France: Strategy of Cilas Laser Company Detailed); Microelectronics (France: Simulation Company to Develop Microelectronic Manufacturing Application); Nuclear R&D (France: Megajoule Laser Plan, Cooperation with Livermore Lab Noted); S&T Policy (EU Efforts to Aid Small Companies` Research Viewed); Telecommunications (France Telecom`s Way to Internet).« less

Space Environment Effects: Model for Emission of Solar Protons (ESP): Cumulative and Worst Case Event Fluences

NASA Technical Reports Server (NTRS)

Xapsos, M. A.; Barth, J. L.; Stassinopoulos, E. G.; Burke, E. A.; Gee, G. B.

1999-01-01

The effects that solar proton events have on microelectronics and solar arrays are important considerations for spacecraft in geostationary and polar orbits and for interplanetary missions. Designers of spacecraft and mission planners are required to assess the performance of microelectronic systems under a variety of conditions. A number of useful approaches exist for predicting information about solar proton event fluences and, to a lesser extent, peak fluxes. This includes the cumulative fluence over the course of a mission, the fluence of a worst-case event during a mission, the frequency distribution of event fluences, and the frequency distribution of large peak fluxes. Naval Research Laboratory (NRL) and NASA Goddard Space Flight Center, under the sponsorship of NASA's Space Environments and Effects (SEE) Program, have developed a new model for predicting cumulative solar proton fluences and worst-case solar proton events as functions of mission duration and user confidence level. This model is called the Emission of Solar Protons (ESP) model.

Space Environment Effects: Model for Emission of Solar Protons (ESP)--Cumulative and Worst-Case Event Fluences

NASA Technical Reports Server (NTRS)

Xapsos, M. A.; Barth, J. L.; Stassinopoulos, E. G.; Burke, Edward A.; Gee, G. B.

1999-01-01

The effects that solar proton events have on microelectronics and solar arrays are important considerations for spacecraft in geostationary and polar orbits and for interplanetary missions. Designers of spacecraft and mission planners are required to assess the performance of microelectronic systems under a variety of conditions. A number of useful approaches exist for predicting information about solar proton event fluences and, to a lesser extent, peak fluxes. This includes the cumulative fluence over the course of a mission, the fluence of a worst-case event during a mission, the frequency distribution of event fluences, and the frequency distribution of large peak fluxes. Naval Research Laboratory (NRL) and NASA Goddard Space Flight Center, under the sponsorship of NASA's Space Environments and Effects (SEE) Program, have developed a new model for predicting cumulative solar proton fluences and worst-case solar proton events as functions of mission duration and user confidence level. This model is called the Emission of Solar Protons (ESP) model.

The microstructure matters: breaking down the barriers with single crystalline silicon as negative electrode in Li-ion batteries

PubMed Central

Sternad, M.; Forster, M.; Wilkening, M.

2016-01-01

Silicon-based microelectronics forms a major foundation of our modern society. Small lithium-ion batteries act as the key enablers of its success and have revolutionised portable electronics used in our all everyday’s life. While large-scale LIBs are expected to help establish electric vehicles, on the other end of device size chip-integrated Si-based μ-batteries may revolutionise microelectronics once more. In general, Si is regarded as one of the white hopes since it offers energy densities being ten times higher than conventional anode materials. The use of monocrystalline, wafer-grade Si, however, requires several hurdles to be overcome since it its volume largely expands during lithiation. Here, we will show how 3D patterned Si wafers, prepared by the sophisticated techniques from semiconductor industry, are to be electrochemically activated to overcome these limitations and to leverage their full potential being reflected in stable charge capacities (>1000 mAhg–1) and high Coulomb efficiencies (98.8%). PMID:27531589

Millimeter-wave MMIC technology for smart weapons

NASA Astrophysics Data System (ADS)

Seashore, Charles R.

1994-12-01

Millimeter wave MMIC component technology has made dramatic progress over the last ten years largely due to funding stimulation received under the ARPA Tri-Service MIMIC program. In several smart weapon systems, MMIC components are now specified as the baseline approach for millimeter wave radar transceiver hardware. Availability of this new frontier in microelectronics has also enabled realization of sensor fusion for multispectral capability to defeat many forms of known countermeasures. The current frequency range for these MMIC-based components is approximately 30 to 100 GHz. In several cases, it has been demonstrated that the MMIC component performance has exceeded that available from hybrid microstrip circuits using selected discrete devices. However, challenges still remain in chip producibility enhancement and cost reduction since many of the essential device structure candidates are themselves emerging technologies with a limited wafer fabrication history and accumulated test databases. It is concluded that smart weapons of the future will rely heavily on advanced microelectronics to satisfy performance requirements as well as meeting stringent packaging and power source constraints.

Recent patents on Cu/low-k dielectrics interconnects in integrated circuits.

PubMed

Jiang, Qing; Zhu, Yong F; Zhao, Ming

2007-01-01

In past decades, the development of microelectronics has moved along with constant speed of scaling to maximize transistor density as driven by the need for electrical and functional performance. For further development, the propagation velocity of electromagnetic waves becomes increasingly important due to their unyielding constraints on interconnect delay. To minimize it, it was forced to the introduction of the Cu/low-k dielectric interconnects to very large scale integrated circuits (VLSI) where k denotes the dielectric constant. In addition, reliable barrier structures, which are the thinnest part among the device parts to maximize space availability for the actual Cu IWs, are required to prevent penetration of different materials. In light of the above statements, this review will focus recent patents and some studies on Cu interconnects including Cu interconnect wires, low-k dielectrics and related barrier materials as well manufacturing techniques in VLSI, which are one of the most essential concerns in microelectronic industry and decides the further development of VLSI. In addition, possible future development in this field is considered.

Piezoelectric-nanowire-enabled power source for driving wireless microelectronics.

PubMed

Xu, Sheng; Hansen, Benjamin J; Wang, Zhong Lin

2010-10-19

Harvesting energy from irregular/random mechanical actions in variable and uncontrollable environments is an effective approach for powering wireless mobile electronics to meet a wide range of applications in our daily life. Piezoelectric nanowires are robust and can be stimulated by tiny physical motions/disturbances over a range of frequencies. Here, we demonstrate the first chemical epitaxial growth of PbZr(x)Ti(1-x)O(3) (PZT) nanowire arrays at 230 °C and their application as high-output energy converters. The nanogenerators fabricated using a single array of PZT nanowires produce a peak output voltage of ~0.7 V, current density of 4 μA cm(-2) and an average power density of 2.8 mW cm(-3). The alternating current output of the nanogenerator is rectified, and the harvested energy is stored and later used to light up a commercial laser diode. This work demonstrates the feasibility of using nanogenerators for powering mobile and even personal microelectronics.

Possibilities for mixed mode chip manufacturing in EUROPRACTICE

NASA Astrophysics Data System (ADS)

Das, C.

1997-02-01

EUROPRACTICE is an EC initiative under the ESPRIT programme which aims to stimulate the wider exploitation of state-of-the-art microelectronics technologies by European industry and to enhance European industrial competitiveness in the global market-place. Through EUROPRACTICE, the EC has created a range of Basic Services that offer users a cost-effective and flexible means of accessing three main microelectronics-based technologies: Application Specific Integrated Circuit (ASICs), Multi-Chip Modules (MCMs) and Microsystems. EUROPRACTICE Basic Services reduce the cost and risk for companies wishing to begin using these technologies. EUROPRACTICE offers a fully supported, low cost route for companies to design and fabricate ASICs for their individual applications. Low cost is achieved by consolidating designs from many users onto a single semiconductor wafer (MPW: Multi Project Wafer). The EUROPRACTICE IC Manufacturing Service (ICMS) offers a broad range of fabrication technologies including CMOS, BiCMOS and GaAs. The Service extends from enabling users to produce prototype ASICs for testing and evaluation, through to low-volume production runs.

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Technology Development Activities for the Space Environment and its Effects on Spacecraft

NASA Technical Reports Server (NTRS)

Kauffman, Billy; Hardage, Donna; Minor, Jody; Barth, Janet; LaBel, Ken

2003-01-01

Reducing size and weight of spacecraft, along with demanding increased performance capabilities, introduces many uncertainties in the engineering design community on how emerging microelectronics will perform in space. The engineering design community is forever behind on obtaining and developing new tools and guidelines to mitigate the harmful effects of the space environment. Adding to this complexity is the push to use Commercial-off-the-shelf (COTS) and shrinking microelectronics behind less shielding and the potential usage of unproven technologies such as large solar sail structures and nuclear electric propulsion. In order to drive down these uncertainties, various programs are working together to avoid duplication, save what resources are available in this technical area and possess a focused agenda to insert these new developments into future mission designs. This paper will describe the relationship between the Living With a Star (LWS): Space Environment Testbeds (SET) Project and NASA's Space Environments and Effects (SEE) Program and their technology development activities funded as a result from the recent SEE Program's NASA Research Announcement.

An Electronic Patch for wearable health monitoring by reflectance pulse oximetry.

PubMed

Haahr, Rasmus G; Duun, Sune B; Toft, Mette H; Belhage, Bo; Larsen, Jan; Birkelund, Karen; Thomsen, Erik V

2012-02-01

We report the development of an Electronic Patch for wearable health monitoring. The Electronic Patch is a new health monitoring system incorporating biomedical sensors, microelectronics, radio frequency (RF) communication, and a battery embedded in a 3-dimensional hydrocolloid polymer. In this paper the Electronic Patch is demonstrated with a new optical biomedical sensor for reflectance pulse oximetry so that the Electronic Patch in this case can measure the pulse and the oxygen saturation. The reflectance pulse oximetry solution is based on a recently developed annular backside silicon photodiode to enable low power consumption by the light emitting components. The Electronic Patch has a disposable part of soft adhesive hydrocolloid polymer and a reusable part of hard polylaurinlactam. The disposable part contains the battery. The reusable part contains the reflectance pulse oximetry sensor and microelectronics. The reusable part is 'clicked' into the disposable part when the patch is prepared for use. The patch has a size of 88 mm by 60 mm and a thickness of 5 mm.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

Retrospective cohort study of a microelectronics and business machine facility.

PubMed

Silver, Sharon R; Pinkerton, Lynne E; Fleming, Donald A; Jones, James H; Allee, Steven; Luo, Lian; Bertke, Stephen J

2014-04-01

We examined health outcomes among 34,494 workers employed at a microelectronics and business machine facility 1969-2001. Standardized mortality ratio (SMR) and standardized incidence ratios were used to evaluate health outcomes in the cohort and Cox regression modeling to evaluate relations between scores for occupational exposures and outcomes of a priori interest. Just over 17% of the cohort (5,966 people) had died through 2009. All cause, all cancer, and many cause-specific SMRs showed statistically significant deficits. In hourly males, SMRs were significantly elevated for non-Hodgkin's lymphoma and rectal cancer. Salaried males had excess testicular cancer incidence. Pleural cancer and mesothelioma excesses were observed in workers hired before 1969, but no available records substantiate use of asbestos in manufacturing processes. A positive, statistically significant relation was observed between exposure scores for tetrachloroethylene and nervous system diseases. Few significant exposure-outcome relations were observed, but risks from occupational exposures cannot be ruled out due to data limitations and the relative youth of the cohort. © 2013 Wiley Periodicals, Inc.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

Direct on-chip DNA synthesis using electrochemically modified gold electrodes as solid support

NASA Astrophysics Data System (ADS)

Levrie, Karen; Jans, Karolien; Schepers, Guy; Vos, Rita; Van Dorpe, Pol; Lagae, Liesbet; Van Hoof, Chris; Van Aerschot, Arthur; Stakenborg, Tim

2018-04-01

DNA microarrays have propelled important advancements in the field of genomic research by enabling the monitoring of thousands of genes in parallel. The throughput can be increased even further by scaling down the microarray feature size. In this respect, microelectronics-based DNA arrays are promising as they can leverage semiconductor processing techniques with lithographic resolutions. We propose a method that enables the use of metal electrodes for de novo DNA synthesis without the need for an insulating support. By electrochemically functionalizing gold electrodes, these electrodes can act as solid support for phosphoramidite-based synthesis. The proposed method relies on the electrochemical reduction of diazonium salts, enabling site-specific incorporation of hydroxyl groups onto the metal electrodes. An automated DNA synthesizer was used to couple phosphoramidite moieties directly onto the OH-modified electrodes to obtain the desired oligonucleotide sequence. Characterization was done via cyclic voltammetry and fluorescence microscopy. Our results present a valuable proof-of-concept for the integration of solid-phase DNA synthesis with microelectronics.

[Application of microelectronics CAD tools to synthetic biology].

PubMed

Madec, Morgan; Haiech, Jacques; Rosati, Élise; Rezgui, Abir; Gendrault, Yves; Lallement, Christophe

2017-02-01

Synthetic biology is an emerging science that aims to create new biological functions that do not exist in nature, based on the knowledge acquired in life science over the last century. Since the beginning of this century, several projects in synthetic biology have emerged. The complexity of the developed artificial bio-functions is relatively low so that empirical design methods could be used for the design process. Nevertheless, with the increasing complexity of biological circuits, this is no longer the case and a large number of computer aided design softwares have been developed in the past few years. These tools include languages for the behavioral description and the mathematical modelling of biological systems, simulators at different levels of abstraction, libraries of biological devices and circuit design automation algorithms. All of these tools already exist in other fields of engineering sciences, particularly in microelectronics. This is the approach that is put forward in this paper. © 2017 médecine/sciences – Inserm.

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

NASA Technical Reports Server (NTRS)

Turflinger, T.; Schmeichel, W.; Krieg, J.; Titus, J.; Campbell, A.; Reeves, M.; Marshall (P.); Hardage, Donna (Technical Monitor)

2004-01-01

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO2 Substrates

NASA Astrophysics Data System (ADS)

Guisbiers, G.; Strehle, S.; Van Overschelde, O.; Wautelet, M.

2006-02-01

Residual stresses are commonly generated during the deposition process of thin films and can influence the reliability of the deposited systems e.g. due to fatigue, aging effects or debonding. Therefore, an evaluation of such stresses in thin films is of crucial importance for metallization of microelectronic devices and MEMS. Residual stresses can be determined experimentally by substrate curvature or X-ray diffraction measurements. The modeling of residual stresses generally deals with the calculation of the thermal ones alone. In the present work, a model is proposed, where intrinsic stresses are calculated explicitly based on the Tsui-Clyne model. The aim of this model, called self-consistent model, is to predict residual stresses in thin films independent on measurements. The simulated values are compared with experimental results for the following systems: Ta/Si, Mo/Si, Al/SiO2/Si and Pd/SiO2/Si.

Evaluation of elastic properties of nanoporous silicon oxide thin films by picosecond laser ultrasonics

NASA Astrophysics Data System (ADS)

Mechri, C.; Ruello, P.; Gusev, V.; Breteau, J. M.; Mounier, D.; Henderson, M.; Gibaud, A.; Dourdain, S.

2008-01-01

Picosecond laser ultrasonics uses femtosecond laser pulses for the generation and detection of acoustic pulses with a typical duration between few picoseconds and few hundreds of pico seconds. The shorter the duration of the acoustic pulse is, the more precisely could be made the measurements of the film thickness [C. Thomsen et al., Phys. Rev. B 34, 4129 (1986)] and the elastic modulus by pulse-echo method or through Brillouin scattering detection. In this short communication we report the results of the evaluation of the properties of nanoporous silicon oxide thin films which present potential low-k and thermal barrier properties and are also of great interest for the microelectronic industry to replace the traditional silicate glass films in order to decrease the resistance-capacitance transition delay in the VLSI circuits. Most of the studies that have been carried so far have treated the optical properties of such structures. We report the results of the evaluation of acoustic properties of nanoporous thin films.

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

PubMed Central

2011-01-01

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C. PMID:21711666

Electrical stimulation of the brain and the development of cortical visual prostheses: An historical perspective.

PubMed

Lewis, Philip M; Rosenfeld, Jeffrey V

2016-01-01

Rapid advances are occurring in neural engineering, bionics and the brain-computer interface. These milestones have been underpinned by staggering advances in micro-electronics, computing, and wireless technology in the last three decades. Several cortically-based visual prosthetic devices are currently being developed, but pioneering advances with early implants were achieved by Brindley followed by Dobelle in the 1960s and 1970s. We have reviewed these discoveries within the historical context of the medical uses of electricity including attempts to cure blindness, the discovery of the visual cortex, and opportunities for cortex stimulation experiments during neurosurgery. Further advances were made possible with improvements in electrode design, greater understanding of cortical electrophysiology and miniaturisation of electronic components. Human trials of a new generation of prototype cortical visual prostheses for the blind are imminent. This article is part of a Special Issue entitled Hold Item. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

Hybrid supercapacitors for reversible control of magnetism

PubMed Central

Molinari, Alan; Leufke, Philipp M.; Reitz, Christian; Dasgupta, Subho; Witte, Ralf; Kruk, Robert; Hahn, Horst

2017-01-01

Electric field tuning of magnetism is one of the most intensely pursued research topics of recent times aiming at the development of new-generation low-power spintronics and microelectronics. However, a reversible magnetoelectric effect with an on/off ratio suitable for easy and precise device operation is yet to be achieved. Here we propose a novel route to robustly tune magnetism via the charging/discharging processes of hybrid supercapacitors, which involve electrostatic (electric-double-layer capacitance) and electrochemical (pseudocapacitance) doping. We use both charging mechanisms—occurring at the La0.74Sr0.26MnO3/ionic liquid interface to control the balance between ferromagnetic and non-ferromagnetic phases of La1−xSrxMnO3 to an unprecedented extent. A magnetic modulation of up to ≈33% is reached above room temperature when applying an external potential of only about 2.0 V. Our case study intends to draw attention to new, reversible physico-chemical phenomena in the rather unexplored area of magnetoelectric supercapacitors. PMID:28489078

NASA Tech Briefs, November 2013

NASA Technical Reports Server (NTRS)

2013-01-01

Topics include: Cryogenic Liquid Sample Acquisition System for Remote Space Applications; 5 Spatial Statistical Data Fusion (SSDF); GPS Estimates of Integrated Precipitable Water Aid Weather Forecasters; Integrating a Microwave Radiometer into Radar Hardware for Simultaneous Data Collection Between the Instruments; Rapid Detection of Herpes Viruses for Clinical Applications; High-Speed Data Recorder for Space, Geodesy, and Other High-Speed Recording Applications; Datacasting V3.0; An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz; Stacked Transformer for Driver Gain and Receive Signal Splitting; Wireless Integrated Microelectronic Vacuum Sensor System; Fabrication Method for LOBSTER-Eye Optics in <110> Silicon; Compact Focal Plane Assembly for Planetary Science; Fabrication Methods for Adaptive Deformable Mirrors; Visiting Vehicle Ground Trajectory Tool; Workflow-Based Software Development Environment; Mobile Thread Task Manager; A Kinematic Calibration Process for Flight Robotic Arms; Magnetostrictive Alternator; Bulk Metallic Glasses and Composites for Optical and Compliant Mechanisms; Detection of Only Viable Bacterial Spores Using a Live/Dead Indicator in Mixed Populations; and Intravenous Fluid Generation System.

Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

NASA Astrophysics Data System (ADS)

Lanham, Steven J.; Kushner, Mark J.

2017-08-01

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this paper, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. The dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.

Digital stethoscope system: the feasibility of cardiac auscultation

NASA Astrophysics Data System (ADS)

Pariaszewska, Katarzyna; Młyńczak, Marcel; Niewiadomski, Wiktor; Cybulski, Gerard

2013-10-01

The application of the digital stethoscope system is a new tendency in methods of cardiac auscultation. Heart sounds, generated by the fluctuations of blood velocity and vibrations of muscle structure, are an important signal in the primary diagnosis of heart diseases. Since the XIXs century for physical examination an analog stethoscope was used, but the development of microelectronics enable the construction of digital stethoscopes which started modern phonocardiography. The typical hardware of the system could be divided into analog and digital parts, respectively. The first one consists of microphone and pre-amplifier. The second one contains a microcontroller with peripherals for data saving and transmission. Usually the specialized software is applied for the signal acquisition and digital signal processing (filtering, spectral analysis and others). This paper presents an overview of methods used in cardiac auscultation and expected developing path in the future. It also contains the description of our digital stethoscope system, which is planned to be used in poliphysiographical studies.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

NASA Astrophysics Data System (ADS)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.

PubMed

Xiu, Faxian; Wang, Yong; Kim, Jiyoung; Hong, Augustin; Tang, Jianshi; Jacob, Ajey P; Zou, Jin; Wang, Kang L

2010-04-01

Electric-field manipulation of ferromagnetism has the potential for developing a new generation of electric devices to resolve the power consumption and variability issues in today's microelectronics industry. Among various dilute magnetic semiconductors (DMSs), group IV elements such as Si and Ge are the ideal material candidates because of their excellent compatibility with the conventional complementary metal-oxide-semiconductor (MOS) technology. Here we report, for the first time, the successful synthesis of self-assembled dilute magnetic Mn(0.05)Ge(0.95) quantum dots with ferromagnetic order above room temperature, and the demonstration of electric-field control of ferromagnetism in MOS ferromagnetic capacitors up to 100 K. We found that by applying electric fields to a MOS gate structure, the ferromagnetism of the channel layer can be effectively modulated through the change of hole concentration inside the quantum dots. Our results are fundamentally important in the understanding and to the realization of high-efficiency Ge-based spin field-effect transistors.

Wireless Microstimulators for Neural Prosthetics

PubMed Central

Sahin, Mesut; Pikov, Victor

2016-01-01

One of the roadblocks in the field of neural prosthetics is the lack of microelectronic devices for neural stimulation that can last a lifetime in the central nervous system. Wireless multi-electrode arrays are being developed to improve the longevity of implants by eliminating the wire interconnects as well as the chronic tissue reactions due to the tethering forces generated by these wires. An area of research that has not been sufficiently investigated is a simple single-channel passive microstimulator that can collect the stimulus energy that is transmitted wirelessly through the tissue and immediately convert it into the stimulus pulse. For example, many neural prosthetic approaches to intraspinal microstimulation require only a few channels of stimulation. Wired spinal cord implants are not practical for human subjects because of the extensive flexions and rotations that the spinal cord experiences. Thus, intraspinal microstimulation may be a pioneering application that can benefit from submillimetersize floating stimulators. Possible means of energizing such a floating microstimulator, such as optical, acoustic, and electromagnetic waves, are discussed. PMID:21488815

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

Sparsity-based super-resolved coherent diffraction imaging of one-dimensional objects.

PubMed

Sidorenko, Pavel; Kfir, Ofer; Shechtman, Yoav; Fleischer, Avner; Eldar, Yonina C; Segev, Mordechai; Cohen, Oren

2015-09-08

Phase-retrieval problems of one-dimensional (1D) signals are known to suffer from ambiguity that hampers their recovery from measurements of their Fourier magnitude, even when their support (a region that confines the signal) is known. Here we demonstrate sparsity-based coherent diffraction imaging of 1D objects using extreme-ultraviolet radiation produced from high harmonic generation. Using sparsity as prior information removes the ambiguity in many cases and enhances the resolution beyond the physical limit of the microscope. Our approach may be used in a variety of problems, such as diagnostics of defects in microelectronic chips. Importantly, this is the first demonstration of sparsity-based 1D phase retrieval from actual experiments, hence it paves the way for greatly improving the performance of Fourier-based measurement systems where 1D signals are inherent, such as diagnostics of ultrashort laser pulses, deciphering the complex time-dependent response functions (for example, time-dependent permittivity and permeability) from spectral measurements and vice versa.

Direct Growth of Graphene Film on Germanium Substrate

PubMed Central

Wang, Gang; Zhang, Miao; Zhu, Yun; Ding, Guqiao; Jiang, Da; Guo, Qinglei; Liu, Su; Xie, Xiaoming; Chu, Paul K.; Di, Zengfeng; Wang, Xi

2013-01-01

Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS). PMID:23955352

Development of a solid-phase microextraction gas chromatography with microelectron-capture detection method for a multiresidue analysis of pesticides in bovine milk.

PubMed

Fernandez-Alvarez, Maria; Llompart, Maria; Lamas, J Pablo; Lores, Marta; Garcia-Jares, Carmen; Cela, Rafael; Dagnac, Thierry

2008-06-09

A simple and rapid method based on solid-phase microextraction (SPME) technique followed by gas chromatography with microelectron-capture detection (GC-microECD) was developed for the simultaneous determination of more than 30 pesticides (pyrethroids and organochlorinated among others) in milk. To our knowledge, this is the first application of SPME for the determination of pyrethroid pesticides in milk. Negative matrix effects due to the complexity and lipophility of the studied matrix were reduced by diluting the sample with distilled water. A 2(5-1) fractional factorial design was performed to assess the influence of several factors (type of fiber coating, sampling mode, stirring, extraction temperature, and addition of sodium chloride) on the SPME procedure and to determine the optimal extraction conditions. After optimization of all the significant variables and interactions, the recommended procedure was established as follows: DSPME (using a polydimethylsiloxane (PDMS)/divinylbenzene (DVB) coating) of 1 mL of milk sample diluted with Milli-Q water (1:10 dilution ratio), at 100 degrees C, under stirring for 30 min. The proposed method showed good linearity and high sensitivity, with limits of detection (LOD) at the sub-ng mL(-1) level. Within a day and among days precisions were also evaluated (R.S.D.<15%). One of the most important attainments of this work was the use of external calibration with milk-matched standards to quantify the levels of the target analytes. The method was tested with liquid and powdered milk samples with different fat contents covering the whole commercial range. The efficiency of the extraction process was studied at several analyte concentration levels obtaining high recoveries (>80% in most cases) for different types of full-fat milks. The optimized procedure was validated with powdered milk certified reference material, which was quantified using external calibration and standard addition protocols. Finally, the DSPME-GC-microECD methodology was applied to the analysis of milk samples collected in farms of dairy cattle from NW Spain.

Development of a solid-phase microextraction gas chromatography with microelectron-capture detection method for the determination of 5-bromo-5-nitro-1,3-dioxane in rinse-off cosmetics.

PubMed

Fernandez-Alvarez, Maria; Lamas, J Pablo; Sanchez-Prado, Lucia; Llompart, Maria; Garcia-Jares, Carmen; Lores, Marta

2010-10-22

5-Bromo-5-nitro-1,3-dioxane (bronidox) is a bromine-containing preservative often used in rinse-off cosmetics but also subjected to several restrictions according to the European Cosmetic Products Regulation. Thus, as a part of a quality control procedure, analytical methods for the determination of this compound in different types of cosmetics are required. In the present work, a solvent-free and simple methodology based on solid-phase microextraction (SPME) followed by gas chromatography with microelectron capture detection (GC-μECD) has been developed and validated for the determination of bronidox in cosmetic samples such as shampoos, body cleansers or facial exfoliants. As far as we know, this is the first application of SPME to this preservative. Negative matrix effects due to the complexity of the studied samples were reduced by dilution with ultrapure water. The influence of several factors on the SPME procedure such as fiber coating, extraction temperature, salt addition (NaCl) and sampling mode has been assessed by performing a 2(4)-factorial design. After optimization, the recommended procedure was established as follows: direct solid-phase microextraction (DSPME), using a PDMS/DVB coating, of 10 mL of diluted cosmetic with 20% NaCl, at room temperature, under stirring for 30 min. Using these suggested extraction conditions, linear calibration could be achieved, with limits of detection (LOD) and quantification (LOQ) well below the maximum authorized concentration (0.1%) established by the European legislation. Relative standard deviations (RSD) lower than 10% were obtained for both within a day and among days precision. The method was applied to diverse types of formulations spiked with bronidox at different concentration levels (0.008-0.10%); these samples were quantified by external calibration and satisfactory recoveries (≥ 70%) were obtained in all cases. Finally, the SPME-GC-μECD methodology was applied to the analysis of several cosmetics labeled or not as containing bronidox. The presence of this preservative in some of these samples was confirmed by GC-MS. Copyright © 2010 Elsevier B.V. All rights reserved.

Symmetric miniaturized heating system for active microelectronic devices.

PubMed

McCracken, Michael; Mayer, Michael; Jourard, Isaac; Moon, Jeong-Tak; Persic, John

2010-07-01

To qualify interconnect technologies such as microelectronic fine wire bonds for mass production of integrated circuit (IC) packages, it is necessary to perform accelerated aging tests, e.g., to age a device at an elevated temperature or to subject the device to thermal cycling and measure the decrease of interconnect quality. There are downsides to using conventional ovens for this as they are relatively large and have relatively slow temperature change rates, and if electrical connections are required between monitoring equipment and the device being heated, they must be located inside the oven and may be aged by the high temperatures. Addressing these downsides, a miniaturized heating system (minioven) is presented, which can heat individual IC packages containing the interconnects to be tested. The core of this system is a piece of copper cut from a square shaped tube with high resistance heating wire looped around it. Ceramic dual in-line packages are clamped against either open end of the core. One package contains a Pt100 temperature sensor and the other package contains the device to be aged placed in symmetry to the temperature sensor. According to the temperature detected by the Pt100, a proportional-integral-derivative controller adjusts the power supplied to the heating wire. The system maintains a dynamic temperature balance with the core hot and the two symmetric sides with electrical connections to the device under test at a cooler temperature. Only the face of the package containing the device is heated, while the socket holding it remains below 75 degrees C when the oven operates at 200 degrees C. The minioven can heat packages from room temperature up to 200 degrees C in less than 5 min and maintain this temperature at 28 W power. During long term aging, a temperature of 200 degrees C was maintained for 1120 h with negligible resistance change of the heating wires after 900 h (heating wire resistance increased 0.2% over the final 220 h). The device is also subjected to 5700 thermal cycles between 55 and 195 degrees C, demonstrating reliability under thermal cycling.

MIT Lincoln Laboratory Annual Report 2013

DTIC Science & Technology

2013-01-01

A small-scale demonstration FPGA is currently being fabricated in the Microelectronics Laboratory, and a larger array is being designed for fabri ...year, the first Friday of February is a day to call attention to heart disease . Efforts of the six-member team, MIT Lincoln Laboratory for the Heart

Field Emission Cathode and Vacuum Microelectronic Microwave Amplifier Development

DTIC Science & Technology

1993-03-31

the crushed material with additional yttria-stabilized zirconia powder to yield a pressable material of appropriate overall composition. This mixture...sensitivity of the system to oxygen content, a dedicated effort is planned to study the effect of residual oxygen in the zirconia powder on composite growth

Superconducting flux flow digital circuits

DOEpatents

Hietala, Vincent M.; Martens, Jon S.; Zipperian, Thomas E.

1995-01-01

A NOR/inverter logic gate circuit and a flip flop circuit implemented with superconducting flux flow transistors (SFFTs). Both circuits comprise two SFFTs with feedback lines. They have extremely low power dissipation, very high switching speeds, and the ability to interface between Josephson junction superconductor circuits and conventional microelectronics.

Work and Programmable Automation.

ERIC Educational Resources Information Center

DeVore, Paul W.

A new industrial era based on electronics and the microprocessor has arrived, an era that is being called intelligent automation. Intelligent automation, in the form of robots, replaces workers, and the new products, using microelectronic devices, require significantly less labor to produce than the goods they replace. The microprocessor thus…

Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

NASA Astrophysics Data System (ADS)

Jong-Woong Kim,; Young-Seok Kim,; Sung-Jei Hong,; Tae-Hwan Hong,; Jeong-In Han,

2010-05-01

SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

PubMed Central

Sowade, Enrico; Ramon, Eloi; Mitra, Kalyan Yoti; Martínez-Domingo, Carme; Pedró, Marta; Pallarès, Jofre; Loffredo, Fausta; Villani, Fulvia; Gomes, Henrique L.; Terés, Lluís; Baumann, Reinhard R.

2016-01-01

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement. PMID:27649784

Latest generation of ASICs for photodetector readout

NASA Astrophysics Data System (ADS)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.

Influence of finite geometrical asymmetry of the electrodes in capacitively coupled radio frequency plasma

NASA Astrophysics Data System (ADS)

Bora, B.; Soto, L.

2014-08-01

Capacitively coupled radio frequency (CCRF) plasmas are widely studied in last decades due to the versatile applicability of energetic ions, chemically active species, radicals, and also energetic neutral species in many material processing fields including microelectronics, aerospace, and biology. A dc self-bias is known to generate naturally in geometrically asymmetric CCRF plasma because of the difference in electrode sizes known as geometrical asymmetry of the electrodes in order to compensate electron and ion flux to each electrode within one rf period. The plasma series resonance effect is also come into play due to the geometrical asymmetry and excited several harmonics of the fundamental in low pressure CCRF plasma. In this work, a 13.56 MHz CCRF plasma is studied on the based on the nonlinear global model of asymmetric CCRF discharge to understand the influences of finite geometrical asymmetry of the electrodes in terms of generation of dc self-bias and plasma heating. The nonlinear global model on asymmetric discharge has been modified by considering the sheath at the grounded electrode to taking account the finite geometrical asymmetry of the electrodes. The ion density inside both the sheaths has been taken into account by incorporating the steady-state fluid equations for ions considering that the applied rf frequency is higher than the typical ion plasma frequency. Details results on the influences of geometrical asymmetry on the generation of dc self-bias and plasma heating are discussed.

Micro-Thermoelectric Generation Modules Fabricated with Low-Cost Mechanical Machining Processes

NASA Astrophysics Data System (ADS)

Liu, Dawei; Jin, A. J.; Peng, Wenbo; Li, Qiming; Gao, Hu; Zhu, Lianjun; Li, Fu; Zhu, Zhixiang

2017-05-01

Micro/small-scale thermoelectric generation modules are able to produce continuous, noise-free and reliable electricity power using low temperature differences that widely exist in nature or industry. These advantages bring them great application prospects in the fields of remote monitoring, microelectronics/micro-electromechanical systems (MEMS), medical apparatus and smart management system, which often require a power source free of maintenance and vibration. In this work, a prototypical thermoelectric module (12 mm × 12 mm × 0.8 mm) with 15 pairs of micro-scale thermoelectric legs (0.2 mm in width and 0.6 mm in height for each leg) is fabricated using a low-cost mechanical machining process. In this process, cutting and polishing are the main methods for the preparation of thermoelectric pairs from commercial polycrystalline materials and for the fabrication of electrode patterns. The as-fabricated module is tested for its power generation properties with the hot side heated by an electrical heater and the cold side by cold air. With the heater temperature of 375 K, the thermoelectric potential is about 9.1 mV, the short circuit current is about 14.5 mA, and the maximum output power is about 32.8 μW. The finite element method is applied to analyze the heat transfer of the module during our test. The temperature difference and heat flux are simulated, according to which the output powers at different temperatures are calculated, and the result is relatively consistent compared to the test results.

Insulated InP (100) semiconductor by nano nucleus generation in pure water

NASA Astrophysics Data System (ADS)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Materials Coating Techniques

DTIC Science & Technology

1980-03-01

applications from decorative to utilitarian over significant segments of the engineering, chemical, nuclear , microelectronics, and related Industries. PVD...Thermal-control coating. Boron 2430 Cermet component, nuclear shielding and controlrod material; Carbide wear- and temperature-resistant. Calcium...Zirconium Oxide (Hafnia-Pree � Thermal-barrier coatings for nuclear applications. Lime Stabi!Aed) Zirconium 2563 Resistant to high-temperature

NASA Electronic Parts and Packaging (NEPP) Program - Radiation Activities

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2008-01-01

The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs.

Multifunctional Materials: Transparent Reactive Armor Utilizing Single-Walled Carbon Nanotube Frameworks

DTIC Science & Technology

2010-03-03

with white- light femtosecond pulses. Applied Surface Science 253, 6305-6309 (2007). 22. Komarov, P. L., Burzo, M. G., Kaytaz, G. & Raad , P. E...Microelectronics Journal 34, 1115-1118 (2003). 23. Kulish, V. V., Lage, J. L., Komarov, P. L. & Raad , P. E. A fractional-diffusion theory for

Advances in Automation Prompt Concern over Increased U.S. Unemployment.

ERIC Educational Resources Information Center

General Accounting Office, Washington, DC.

The General Accounting Office recently studied automation, especially the advent of microelectronics, and its impact on unemployment. The study included identifying available information sources and obtaining opinions on the impact of automation on employment, federal efforts to predict its impact, the dissemination of information about the job…

78 FR 31431 - Export Administration Regulations (EAR): Control of Spacecraft Systems and Related Items the...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-24

.... Paragraph 9A515.b would control ground control systems and training simulators ``specially designed'' for.... Paragraph .d would control certain radiation hardened microelectronic circuits that are ``specially designed... .a would control test, inspection, and production ``equipment'' ``specially designed'' for the...

Development of Micro and Nanostructured Materials for Interfacial Self-Healing

ERIC Educational Resources Information Center

Blaiszik, Benjamin James

2009-01-01

Damage in polymeric coatings, adhesives, microelectronic components, and composites spans many length scales. For small scale damage, autonomic self-healing can repair multiple damage modes without manual intervention. In autonomic self-healing materials, a healing response is triggered by damage to the material. Size scale considerations, such as…

76 FR 58045 - Amended Certification Regarding Eligibility To Apply for Worker Adjustment Assistance; Applied...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-19

... Leased Workers From Adecco Employment Services, Aerotek, Inc., CDI IT Solutions, Inc. (CDI Corporation..., Aerotek, Inc., CDI IT Solutions, D&Z Microelectronics, Pentagon Technology, Proactive Business Solution... include the Unemployment Insurance (UI) wages for on-site leased workers from CDI IT Solutions is reported...

Canada in the 21st Century - Triumph or Tragedy? The Front Line.

ERIC Educational Resources Information Center

Kilgour, David

1996-01-01

Argues that new patterns of trade and production combined with an emphasis on a knowledge-based economy/society make it imperative that Canada upgrade its educational system. Specifically notes that several growing and dominant industries (microelectronics, biotechnology, telecommunications) require a high-tech skilled labor force. (MJP)

Highest integration in microelectronics: Development of digital ASICs for PARS3-LR

NASA Astrophysics Data System (ADS)

Scholler, Peter; Vonlutz, Rainer

Essential electronic system components by PARS3-LR, show high requirements in calculation power, power consumption and reliability, by immediately increasing integration thicknesses. These problems are solved by using integrated circuits, developed by LSI LOGIC, that uses the technical and economic advantages of this leading edge technology.

The Programmable Calculator in the Classroom.

ERIC Educational Resources Information Center

Stolarz, Theodore J.

The uses of programable calculators in the mathematics classroom are presented. A discussion of the "microelectronics revolution" that has brought programable calculators into our society is also included. Pointed out is that the logical or mental processes used to program the programable calculator are identical to those used to program…

CMOS Ultra Low Power Radiation Tolerant (CULPRiT) Microelectronics

NASA Technical Reports Server (NTRS)

Yeh, Penshu; Maki, Gary

2007-01-01

Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.

Educational Technology in the Crystal Ball.

ERIC Educational Resources Information Center

Langham-Johnson, Shirley

This paper predicts that microelectronic circuitry will have an impact on education comparable to that of the industrial revolution or the invention of the printing press. Present conditions influencing educational technology and trends are considered in light of five considerations: (1) recent redefinitions of what educational technology is; (2)…

Optical and Interface-Based Methods of Defect Engineering in Silicon

ERIC Educational Resources Information Center

Kondratenko, Yevgeniy Vladimirovich

2009-01-01

Ion implantation is widely used in the microelectronics industry for fabrication of source and drain transistor regions. Unfortunately, implantation causes considerable damage to the substrate lattice rendering most of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a…

Secondary School Projects and the Microchip.

ERIC Educational Resources Information Center

Irvine, A. F.

This study of the applications of microelectronic devices in industry, together with an assessment of their value for use in schools, emphasizes the basic principles underlying the new technology and the practical ways in which these can contribute to associated work in computing and other disciplines in the school curriculum. Following a…

Contamination control in hybrid microelectronic modules. Identification of critical process and contaminants, part 1

NASA Technical Reports Server (NTRS)

Himmel, R. P.

1975-01-01

Hybrid processes, handling procedures, and materials were examined to identify the critical process steps in which contamination is most likely to occur, to identify the particular contaminants associated with these critical steps, and to propose method for the control of these contaminants.

Flow Visualization Study of Natural Convection from a Heated Protrusion in a Liquid Filled Rectangular Enclosure.

DTIC Science & Technology

1983-12-01

PROPOSED SOLUTIONS Many papers have been published outlining alternative methods of thermally controlling microelectronic devices. Hannemann [3] describes...Workshop, NSF Grant ENG-7701297, Directions of Heat Transfer in Electronic Equipment, Fy R. C. Chu, 1977. 3. Hannemann , R., "Electronic System Thermal

Superconducting flux flow digital circuits

DOEpatents

Hietala, V.M.; Martens, J.S.; Zipperian, T.E.

1995-02-14

A NOR/inverter logic gate circuit and a flip flop circuit implemented with superconducting flux flow transistors (SFFTs) are disclosed. Both circuits comprise two SFFTs with feedback lines. They have extremely low power dissipation, very high switching speeds, and the ability to interface between Josephson junction superconductor circuits and conventional microelectronics. 8 figs.

Controlling sediment collection with data loggers

Treesearch

Rand E. Eads

1991-01-01

Abstract - The proliferation of commercial non-programmable data loggers in the past five years has done little to increase sediment sampling efficiency in remote locations. Recent advances in microelectronics have encouraged the development of commercial, low-power, programmable data loggers at reasonable cost. Although some facets of hydrologic data collection may...

ASIC/FPGA Trust Assessment Framework

NASA Technical Reports Server (NTRS)

Berg, Melanie

2018-01-01

NASA Electronic Parts and Packaging (NEPP) is developing a process to be employed in critical applications. The framework assesses levels of Trust and assurance in microelectronic systems. The process is being created with participation from a variety of organizations. We present a synopsis of the framework that includes contributions from The Aerospace Corporation.

Heterogeneous Integration Technology

DTIC Science & Technology

2017-05-19

Distribution A. Approved for public release; distribution unlimited. (APRS-RY-17-0383) Heterogeneous Integration Technology Dr. Burhan...2013 and 2015 [4]. ...................................... 9 Figure 3: 3D integration of similar or diverse technology components follows More Moore and...10 Figure 4: Many different technologies are used in the implementation of modern microelectronics systems can benefit from

A Novel Silicon Micromachined Integrated MCM Thermal Management System

NASA Technical Reports Server (NTRS)

Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

1997-01-01

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Heat detection and compositions and devices therefor

NASA Technical Reports Server (NTRS)

Rembaum, A. (Inventor)

1975-01-01

Temperature change of a substrate such as a microelectronic component is sensed and detected by means of a mixture of a weak molecular complex of an electron donor compound such as an organic amine and an electron acceptor compound such as nitroaromatic compound. The mixture is encapsulated in a clear binder such as a vinyl resin.

Database Management Systems: A Case Study of Faculty of Open Education

ERIC Educational Resources Information Center

Kamisli, Zehra

2004-01-01

We live in the information and the microelectronic age, where technological advancements become a major determinant of our lifestyle. Such advances in technology cannot possibly be made or sustained without concurrent advancement in management systems (5). The impact of computer technology on organizations and society is increasing as new…

Micro-Electronics, Robotics and Jobs. Information Computer Communication Policy Series No. 7.

ERIC Educational Resources Information Center

Organisation for Economic Cooperation and Development, Paris (France).

This monograph contains selected papers presented at the Second Special Session on Information Technologies, Productivity and Labour Market Implications, which took place at the Organisation for Economic Cooperation and Development on October 19-21, 1981. An introductory note summarizes significant points from the meeting. Part 1 contains a report…

A New Microelectronics Curriculum Created by Synopsys, Inc.

ERIC Educational Resources Information Center

Goldman, Rich; Bartleson, Karen; Wood, Troy; Melikyan, Vazgen; Wang, Zhi-hua; Chen, Lan

2009-01-01

Rapid changes in integrated circuits (IC) technology and constantly shrinking process geometries demand a new curriculum that meets the contemporary requirements for IC design. This is especially important for 90nm and below technologies and the use of state-of-the-art EDA design tools and advanced IC design techniques. The creation of new…

Microcomputer Materials from MEP. An Annotated Directory of Packages of Interest to Further Education. An Occasional Paper.

ERIC Educational Resources Information Center

Gilbert, Leslie

Designed to disseminate information to the post-school sector of United Kingdom education, this directory provides information on 50 microcomputer software packages developed by the Microelectronics Education Program (MEP) and available through educational publishers. Subject areas represented include accountancy, biology, business education,…

Positioning Education in the Information Society: The Transnational Diffusion of the Information and Communication Technology Curriculum

ERIC Educational Resources Information Center

Ham, Seung-Hwan; Cha, Yun-Kyung

2009-01-01

One of the most distinctive qualities that characterize present-day society is the social fact that people are shifting to the information age. In recent years, they have witnessed remarkable developments in information and communication technology (ICT), in which microelectronics, computers, and telecommunications have converged. Transnational…

Report on High Technology Programs in Illinois Public Community Colleges.

ERIC Educational Resources Information Center

Illinois Community Coll. Board, Springfield.

Survey results are presented from a study of the steps being taken by the 52 Illinois public community colleges to develop and provide programs in high technology fields. First, high technology programs are defined as those occupational programs that educate and train individuals to operate, maintain, and/or repair micro-electronic or computerized…

Learning Platform for Study of Power Electronic Application in Power Systems

ERIC Educational Resources Information Center

Bauer, P.; Rompelman, O.

2005-01-01

Present engineering has to deal with increasingly complex systems. In particular, this is the case in electrical engineering. Though this is obvious in microelectronics, also in the field of power systems engineers have to design, operate and maintain highly complex systems such as power grids, energy converters and electrical drives. This is…

Microelectronics (Electronic Devices) Research, Development, Test, and Evaluation Laboratories with DoD

DTIC Science & Technology

1994-04-08

Range, New Mexico , the National Aeronautics and Space Administration Langley Research Center in Hampton, Virginia, and the Lewis Research Center in...SUBMITTED TO CONGRESS MARCH 1993 40 Appendix £. Excerpt from the Army’s Justification for DoD Base Realignment and Closure SEXt BYSASD iNLi i/Ba

Investigation of Jet Impingement Cooling Using High Prandtl Number Fluids and Ammonia for Military Applications

DTIC Science & Technology

2004-03-01

interesting application of liquid jets impinging over a surface is for the cooling of microelectronics. Wadsworth and Mudawar [29] performed an...and I. Mudawar , Cooling of a Multiple Electronic Module by Means of Confined Two-Dimensional Jets of Dielectric Liquid, Journal of Heat Transfer, vol

Architecture Of A Sciencecraft To Fly Past Pluto

NASA Technical Reports Server (NTRS)

Price, Humphrey W.; Staehle, Robert L.; Alkalaj, Leon; Terrile, Richard J.; Miyake, Robert N.

1995-01-01

Two reports discuss architecture of proposed small sciencecraft carrying scientific instruments on trajectory passing near Pluto and continuing into interstellar space. Emphasizes those aspects of design pertaining to compactness, efficiency, and small mass (dry mass less than 100 kg). System block diagram of sciencecraft divided into blocks for sensors, integrated microelectronics, and motive effectors.

A Methodology to Teach Advanced A/D Converters, Combining Digital Signal Processing and Microelectronics Perspectives

ERIC Educational Resources Information Center

Quintans, C.; Colmenar, A.; Castro, M.; Moure, M. J.; Mandado, E.

2010-01-01

ADCs (analog-to-digital converters), especially Pipeline and Sigma-Delta converters, are designed using complex architectures in order to increase their sampling rate and/or resolution. Consequently, the learning of ADC devices also encompasses complex concepts such as multistage synchronization, latency, oversampling, modulation, noise shaping,…

Breakthrough: micro-electronic photovoltaics

ScienceCinema

Okandan, Murat; Gupta, Vipin

2018-01-16

Sandia developed tiny glitter-sized photovoltaic (PV) cells that could revolutionize solar energy collection. The crystalline silicon micro-PV cells will be cheaper and have greater efficiencies than current PV collectors. Micro-PV cells require relatively little material to form well-controlled, highly efficient devices. Cell fabrication uses common microelectric and micro-electromechanical systems (MEMS) techniques.

Selective Bibliography on the History of Computing and Information Processing.

ERIC Educational Resources Information Center

Aspray, William

1982-01-01

Lists some of the better-known and more accessible books on the history of computing and information processing, covering: (1) popular general works; (2) more technical general works; (3) microelectronics and computing; (4) artificial intelligence and robotics; (5) works relating to Charles Babbage; (6) other biographical and personal accounts;…

Modeling of Impression Testing to Obtain Mechanical Properties of Lead-Free Solders Microelectronic Interconnects

DTIC Science & Technology

2005-12-01

hardening exponent and Cimp is the impression strain-rate hardening coefficient. The strain-rate hardening exponent m is a parameter that is...exponent and Cimp is the impression strain-rate hardening coefficient. The strain-rate hardening exponent m is a parameter that is related to the creep

Microelectronic Precision Optical Element Fabrication

DTIC Science & Technology

2009-01-01

spectra for a 0-25V reverse bias and the device tilted at -35° to the optical axis. Also shown is the diode reverse bias I-V curve . 1530 1540...optical modulator using an MEMS deformable micromirror array," Journal of Lightwave Technology, vol. 24(1), pp. 516-525, January 2006. [4] D. H. Parker, M

Proceedings: DISE Workshop on Microprocessors and Education (Fort Collins, Colorado, August 16-18, 1976).

ERIC Educational Resources Information Center

Pittsburgh Univ., PA. Dept. of Electrical Engineering.

Papers presented during four sessions of a workshop, which addressed the role of microprocessors in education, are included in this publication. The issues covered involved seven areas: (1) views of the microelectronics industry; (2) microprocessor architecture; (3) microprocessor chip design; (4) microprocessor software; (5) the impact of…

Microprocessor Design Using Hardware Description Language

ERIC Educational Resources Information Center

Mita, Rosario; Palumbo, Gaetano

2008-01-01

The following paper has been conceived to deal with the contents of some lectures aimed at enhancing courses on digital electronic, microelectronic or VLSI systems. Those lectures show how to use a hardware description language (HDL), such as the VHDL, to specify, design and verify a custom microprocessor. The general goal of this work is to teach…

The Effects of Microprocessors on Industry, Society and Employment: A Meeting of the Frontier Group on Strategies for Change in a Technological Society (Bath, England, March 13, 1979).

ERIC Educational Resources Information Center

Harris, N. D. C.

Discussed are the multiple impacts of microelectronics on society. Included are discussions of the problem of predicting effects, difficulty of exploiting new technology, manpower consequences, and needs within the United Kingdom relating to microprocessors. (RE)

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Education and Training in Japan in the Cybernetic Age. Program Report No. 85-B2.

ERIC Educational Resources Information Center

Muta, Hiromitsu

The introduction of computers and other microelectronic equipment throughout the Japanese economy has not affected employment negatively, owing to economic growth and the adaptability of the workers and business organizations affected. Because rapid advances in technology are making many specialized skills and areas of knowledge obsolete, it is…

Gate-Level Commercial Microelectronics Verification with Standard Cell Recognition

DTIC Science & Technology

2015-03-26

21 2.2.1.4 Algorithm Insufficiencies as Applied to DARPA’s Cir- cuit Verification Efforts . . . . . . . . . . . . . . . . . . 22 vi Page...58 4.2 Discussion of SCR Algorithm and Code . . . . . . . . . . . . . . . . . . . 91 4.2.1 Explication of SCR Algorithm ...93 4.2.2 Algorithm Attributes . . . . . . . . . . . . . . . . . . . . . . . . . 118 4.3 Advantages of Transistor-level Verification with SCR

Electronic Records Management and Archives in International Organizations: A RAMP Study with Guidelines.

ERIC Educational Resources Information Center

Dollar, Charles M.

This study is a review of trends in information-handling technology and significant developments which are changing or will change the general environment within which archivists and records managers in international organizations will have to work. Trends in microelectronics, electronic storage, software, data transmission, computer architecture,…

The Impact of Technology on Hawaii's Automotive Mechanics: An Analysis with Recommendations. Technological Impact Study Series.

ERIC Educational Resources Information Center

Allen, Robert

Because of the increasing use of microelectronic componentry in automobiles, vocational educators must reexamine existing automotive mechanics curricula to ensure that they can continue to provide relevant job training. After examining recent trends in the impact of computers and electronics on automotive design and engineering, existing auto…

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Rugged microelectronic module package supports circuitry on heat sink

NASA Technical Reports Server (NTRS)

Johnson, A. L.

1966-01-01

Rugged module package for thin film hybrid microcircuits incorporated a rigid, thermally conductive support structure, which serves as a heat sink, and a lead wire block in which T-shaped electrical connectors are potted. It protects the circuitry from shock and vibration loads, dissipates internal heat, and simplifies electrical connections between adjacent modules.

Chemical Engineering Curricula for the Future: Synopsis of Proceedings of a U.S.-India Conference, January, 1988.

ERIC Educational Resources Information Center

Ramkrishna, D.; And Others

1989-01-01

This is a summary of a seminar for changing the undergraduate chemical engineering curriculum in India. Identifies and describes biotechnology, materials for structural and microelectronic catalysis, and new separation processes as emerging areas. Evaluates the current curriculum, including basic science, engineering lore, chemical engineering,…

A Reliability Simulator for Radiation-Hard Microelectronics Development

DTIC Science & Technology

1991-07-01

1 3.0 PHASE II WORK PLANS ................................................................ 2... plan . The correlation experimental details including the devices utilized, the hot-carrier stressing and the wafer-level radiation correlation procedure...channel devices, and a new lifetime extrapolation method is demonstrated for p-channel devices. 3.0 PHASE II WORK PLANS The Phase 1I program consisted of

State-of-the-art methods for testing materials outdoors

Treesearch

R. Sam Williams

2004-01-01

In recent years, computers, sensors, microelectronics, and communication technologies have made it possible to automate the way materials are tested in the field. It is now possible to purchase monitoring equipment to measure weather and materials properties. The measurement of materials response often requires innovative approaches and added expense, but the...

A Multimedia Telematics Network for On-the-Job Training, Tutoring and Assessment.

ERIC Educational Resources Information Center

Ferreira, J. M. Martins; MacKinnon, Lachlan; Desmulliez, Marc; Foulk, Patrick

This paper describes an educational multimedia network developed in Advanced Software for Training and Evaluation of Processes (ASTEP). ASTEP started in February 1998 and was set up by a mixed industry-academia consortium with the objective of meeting the educational/training demands of the highly competitive microelectronics/semiconductor…

2011 NRL REVIEW

DTIC Science & Technology

2011-01-01

other mechanism ? What accelerates the solar wind? What are the near- Sun plasma properties (particle density, magnetic field)? Does the solar wind come...microstructure character iza tion, elec tronic ceramics, solid-state physics, fiber optics, electro-optics, microelectronics, fracture mechan ics...computational fluid mechanics , experi mental structural mechanics , solid me chan ics, elastic/plastic fracture mechanics , materials, finite-element

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

NASA Technical Reports Server (NTRS)

Boutte, Alvin J.; Campola, Michael J.; Carts, Martin A.; Wilcox, Edward P.; Marshall, Cheryl J.; Phan, Anthony M.; Pellish, Jonathan A.; Powell, Wesley A.; Xapsos, Michael A.

2012-01-01

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors

A Brief History of ... Semiconductors

ERIC Educational Resources Information Center

Jenkins, Tudor

2005-01-01

The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

The Communications Technology Explosion: Now That the School Media Specialist and Everyone Else is a Technologist.

ERIC Educational Resources Information Center

Belland, John C.

1982-01-01

Technological advances in microelectronics-photonics, brain research, and genetic manipulation are discussed, along with their implications for school media programs. Three possible futures for the year 2001 are proffered. Media specialists are urged to adopt only those technologies which truly contribute to efficient management, information…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huizhen; Zhao, Dian; Cui, Yuangjing, E-mail: cuiyj@zju.edu.cn

Temperature measurements and thermal mapping using luminescent MOF operating in the high-temperature range are of great interest in the micro-electronic diagnosis. In this paper, we report a thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a exhibiting strong luminescence at elevated temperature, which can serve as a ratiometric luminescent thermometer for high-temperature range. The high-temperature operating range (313–473 K), high relative sensitivity and accurate temperature resolution, make such a Eu/Tb-mixed MOF useful for micro-electronic diagnosis. - Graphical abstract: A thermostable Eu/Tb-mixed MOF Eu{sub 0.37}Tb{sub 0.63}-BTC-a was developed as a ratiometric luminescent thermometers in the high-temperature range of 313–473 K. - Highlights: • Amore » thermostable Eu/Tb-codoped MOF exhibiting strong luminescent at elevated temperature is reported. • The high-temperature operating range of Eu{sub 0.37}Tb{sub 0.63}-BTC-a is 313–473 K. • The mechanism of Eu{sub 0.37}Tb{sub 0.63}-BTC-a used as thermometers are also discussed.« less

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

Laser ultrasonic characterization of membranes for use as micro-electronic mechanical systems (MEMS)

NASA Astrophysics Data System (ADS)

Edwards, R. S.; Zhou, L. Q.; Pearce, M. J.; Prince, R. G.; Colston, G.; Myronov, M.; Leadley, D. R.; Trushkevych, O.

2017-02-01

Germanium (Ge) on Silicon (Si) has the potential to produce a wide variety of devices, including sensors, solar cells and transistors. Modification of these materials so that a suspended membrane layer is formed, through removing regions of the Si substrate, offers the potential for sensors with a more rapid response and higher sensitivity. Such membranes are a very simple micro-electronic mechanical system (MEMS). It is essential to ensure that the membranes are robust against shock and vibration, with well-characterised resonant frequencies, prior to any practical application. We present work using laser interferometry to characterise the resonant modes of membranes produced from Ge or silicon carbide (SiC) on a Si substrate, with the membranes typically having around 1 mm lateral dimensions. Two dimensional scanning of the sample enables visualisation of each mode. The stress measured from the resonant frequencies agrees well with that calculated from the growth conditions. SiC provides a more robust platform for electronics, while Ge offers better resonant properties. This offers a potential technique for characterising production quality or lifetime testing for the MEMS produced.

Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

PubMed

Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

2008-09-17

We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

Heuristic method of fabricating counter electrodes in dye-sensitized solar cells based on a PEDOT:PSS layer as a catalytic material

NASA Astrophysics Data System (ADS)

Edalati, Sh; Houshangi far, A.; Torabi, N.; Baneshi, Z.; Behjat, A.

2017-02-01

Poly(3,4-ethylendioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was deposited on a fluoride-doped tin oxide glass substrate using a heuristic method to fabricate platinum-free counter electrodes for dye-sensitized solar cells (DSSCs). In this heuristic method a thin layer of PEDOT:PPS is obtained by spin coating the PEDOT:PSS on a Cu substrate and then removing the substrate with FeCl3. The characteristics of the deposited PEDOT:PSS were studied by energy dispersive x-ray analysis and scanning electron microscopy, which revealed the micro-electronic specifications of the cathode. The aforementioned DSSCs exhibited a solar conversion efficiency of 3.90%, which is far higher than that of DSSCs with pure PEDOT:PSS (1.89%). This enhancement is attributed not only to the micro-electronic specifications but also to the HNO3 treatment through our heuristic method. The results of cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and Tafel polarization plots show the modified cathode has a dual function, including excellent conductivity and electrocatalytic activity for iodine reduction.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics.

PubMed

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2016-08-01

We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

PubMed Central

Lausund, Kristian Blindheim; Nilsen, Ola

2016-01-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic–inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios. PMID:27876797

[Medicine 4.0, the importance of electronics, information technology and microsystems in modern medicine - the case of customized chemotherapy].

PubMed

Wolf, Bernhard; Scholze, Christian

2018-05-01

A paradigm shift seems to emerge, not only in industrial engineering ("Industry 4.0") but also in medicine: we are on the threshold to "Medicine 4.0". For many years, molecular biology had a leading position in life sciences, but today scientists start realizing that microelectronic systems, due to an increasing miniaturization, are reaching the scale of human cells and consequently can be used for therapeutic approaches. This article shows how microelectronics can play a major role in modern medicine, through the example of customized chemotherapy. This consists in determining, before the beginning of the treatment, what kind of chemotherapy or drug combination will be most effective for a given patient, and at which dose. This of course allows the lessening of a patient burden during treatment, but also to be more efficient and, in the long run, to save money. In order to do this, we have developed the Intelligent Microplate Reader (IMR), which allows us to accurately test different drugs on living cells by mimicking part of their usual environment. © 2018 médecine/sciences – Inserm.

Space Radiation Effects and Reliability Consideration for the Proposed Jupiter Europa Orbiter

NASA Technical Reports Server (NTRS)

Johnston, Allan

2011-01-01

The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.The proposed Jupiter Europa Orbiter (JEO) mission to explore the Jovian moon Europa poses a number of challenges. The spacecraft must operate for about seven years during the transit time to the vicinity of Jupiter, and then endure unusually high radiation levels during exploration and orbiting phases. The ability to withstand usually high total dose levels is critical for the mission, along with meeting the high reliability standards for flagship NASA missions. Reliability of new microelectronic components must be sufficiently understood to meet overall mission requirements.

Comparison of CREME (cosmic-ray effects on microelectronics) model LET (linear energy transfer) spaceflight dosimetry data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letaw, J.R.; Adams, J.H.

The galactic cosmic radiation (GCR) component of space radiation is the dominant cause of single-event phenomena in microelectronic circuits when Earth's magnetic shielding is low. Spaceflights outside the magnetosphere and in high inclination orbits are examples of such circumstances. In high-inclination orbits, low-energy (high LET) particles are transmitted through the field only at extreme latitudes, but can dominate the orbit-averaged dose. GCR is an important part of the radiation dose to astronauts under the same conditions. As a test of the CREME environmental model and particle transport codes used to estimate single event upsets, we have compiled existing measurements ofmore » HZE doses were compiled where GCR is expected to be important: Apollo 16 and 17, Skylab, Apollo Soyuz Test Project, and Kosmos 782. The LET spectra, due to direct ionization from GCR, for each of these missions has been estimated. The resulting comparisons with data validate the CREME model predictions of high-LET galactic cosmic-ray fluxes to within a factor of two. Some systematic differences between the model and data are identified.« less

Ultrasound aided smooth dispensing for high viscoelastic epoxy in microelectronic packaging.

PubMed

Chen, Yun; Li, Han-Xiong; Shan, Xiuyang; Gao, Jian; Chen, Xin; Wang, Fuliang

2016-01-01

Epoxy dispensing is one of the most critical processes in microelectronic packaging. However, due its high viscoelasticity, dispensing of epoxy is extremely difficult, and a lower viscoelasticity epoxy is desired to improve the process. In this paper, a novel method is proposed to achieve a lowered viscoelastic epoxy by using ultrasound. The viscoelasticity and molecular structures of the epoxies were compared and analyzed before and after experimentation. Different factors of the ultrasonic process, including power, processing time and ultrasonic energy, were studied in this study. It is found that elasticity is more sensitive to ultrasonic processing while viscosity is little affected. Further, large power and long processing time can minimize the viscoelasticity to ideal values. Due to the reduced loss modulus and storage modulus after ultrasonic processing, smooth dispensing is demonstrated for the processed epoxy. The subsequently color temperature experiments show that ultrasonic processing will not affect LED's lighting. It is clear that the ultrasonic processing will have good potential to aide smooth dispensing for high viscoelastic epoxy in electronic industry. Copyright © 2015 Elsevier B.V. All rights reserved.

Morphable 3D mesostructures and microelectronic devices by multistable buckling mechanics

NASA Astrophysics Data System (ADS)

Fu, Haoran; Nan, Kewang; Bai, Wubin; Huang, Wen; Bai, Ke; Lu, Luyao; Zhou, Chaoqun; Liu, Yunpeng; Liu, Fei; Wang, Juntong; Han, Mengdi; Yan, Zheng; Luan, Haiwen; Zhang, Yijie; Zhang, Yutong; Zhao, Jianing; Cheng, Xu; Li, Moyang; Lee, Jung Woo; Liu, Yuan; Fang, Daining; Li, Xiuling; Huang, Yonggang; Zhang, Yihui; Rogers, John A.

2018-03-01

Three-dimensional (3D) structures capable of reversible transformations in their geometrical layouts have important applications across a broad range of areas. Most morphable 3D systems rely on concepts inspired by origami/kirigami or techniques of 3D printing with responsive materials. The development of schemes that can simultaneously apply across a wide range of size scales and with classes of advanced materials found in state-of-the-art microsystem technologies remains challenging. Here, we introduce a set of concepts for morphable 3D mesostructures in diverse materials and fully formed planar devices spanning length scales from micrometres to millimetres. The approaches rely on elastomer platforms deformed in different time sequences to elastically alter the 3D geometries of supported mesostructures via nonlinear mechanical buckling. Over 20 examples have been experimentally and theoretically investigated, including mesostructures that can be reshaped between different geometries as well as those that can morph into three or more distinct states. An adaptive radiofrequency circuit and a concealable electromagnetic device provide examples of functionally reconfigurable microelectronic devices.

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

PubMed

Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

2016-04-01

Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology. Copyright © 2016 Elsevier Ltd. All rights reserved.

Review of Graphene as a Solid State Diffusion Barrier.

PubMed

Morrow, Wayne K; Pearton, Stephen J; Ren, Fan

2016-01-06

Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-dimensional modeling of n+-nu-n+ and p+-pi-p+ semiconducting devices for analog ULSI microelectronics

NASA Astrophysics Data System (ADS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel

2004-03-01

Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages.

PubMed

Carlton, Holly D; Elmer, John W; Li, Yan; Pacheco, Mario; Goyal, Deepak; Parkinson, Dilworth Y; MacDowell, Alastair A

2016-04-13

Synchrotron radiation micro-tomography (SRµT) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm(2), but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample's properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 µm all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Micahel P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enough to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in.) were manufactured with 6 percent polymeric...

In-situ cure monitoring of isocyanate adhesives using microdielectric analysis

Treesearch

Michael P. Wolcott; Timothy G. Rials

1995-01-01

Recent advances in microelectronics have produced small electrodes that can be used for remote dielectric measurements. These miniature sensors are small enought to be embedded in a composite panel during manufacture with little disturbance to the manufacturing process. Small particleboard panels (5 by 4.5 by 0.25 in) were manufactured with 6 percent polymeric...

VLSI Technology: Impact and Promise. Identifying Emerging Issues and Trends in Technology for Special Education.

ERIC Educational Resources Information Center

Bayoumi, Magdy

As part of a 3-year study to identify emerging issues and trends in technology for special education, this paper addresses the implications of very large scale integrated (VLSI) technology. The first section reviews the development of educational technology, particularly microelectronics technology, from the 1950s to the present. The implications…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Beihai; Balachandran, Uthamalingam

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.