Superconductivity in the ternary germanide La3 Pd4 Ge4

NASA Astrophysics Data System (ADS)

Fujii, H.; Mochiku, T.; Takeya, H.; Sato, A.

2005-12-01

The ternary germanide La3Pd4Ge4 has been prepared by arc melting. This compound takes a body-centered lattice with an orthorhombic unit cell with the lattice parameters of a=4.2200(3)Å,b=4.3850(3)Å , and c=25.003(2)Å . The crystal structure of La3Pd4Ge4 is U3Ni4Si4 -type with the space group of Immm , consisting of the combination of structural units of AlB2 -type and BaAl4 -type layers. This compound is a type-II superconductor with a critical temperature (Tc) of 2.75 K. The lower critical field Hc1(0) is estimated to be 54 Oe. The upper critical field Hc2(0) estimated by linear extrapolation of the Hc2(T) curves is about 4.0 kOe, whereas the Werthamer-Hefland-Hohemberg theory gives Hc2(0)WHH=3.0kOe . This is an interesting observation of superconductivity in the compounds with U3Ni4Si4 -type structure. The coherence length ξ(0) of 330 Å and the penetration depth λ(0) of 2480 Å are derived.

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siggelkow, Lisa; Hlukhyy, Viktor; Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de

2012-07-15

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64more » variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.« less

New members of the A{sub 2}M′M{sub 2}{sup ″} structure family (A=Ca, Sr, Yb, La; M′=In,Sn,Pb; M″=Si,Ge)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jehle, Michael; Dürr, Ines; Fink, Saskia

The new mixed tetrelides Sr{sub 2}PbGe{sub 2} and Yb{sub 2}SnGe{sub 2}, several mixed Ca/Sr (A{sup II}) germanides A{sub 2}{sup II}(Sn,Pb)Ge{sub 2} and two polymorphs of La{sub 2}InSi{sub 2} represent new members of the general structure family of ternary alkaline-earth/lanthanoid main group silicides/germanides A{sub 2}M′M{sub 2}{sup ″}(M′=In,Sn,Pb;M″=Si,Ge). All compounds were synthesized from melts of the elements and their crystal structures have been determined by means of single crystal X-ray diffraction. Sr{sub 2}PbGe{sub 2} (Cmmm, a=402.36(11), b=1542.3(4), c=463.27(10) pm) crystallizes with the Mn{sub 2}AlB{sub 2}-type structure. In exhibiting infinite planar Ge zig-zag chains, it represents one border of the compound series. Themore » other borderline case, where only [Ge{sub 2}] dumbbells are left as Ge building units, is represented by the Ca/Yb tin germanides Ca{sub 2}SnGe{sub 2} and Yb{sub 2}SnGe{sub 2} (Mo{sub 2}FeB{sub 2}-type; P4/mbm, a=748.58(13)/740.27(7), c=445.59(8)/435.26(5) pm). In between these two border structures compounds with variable Si/Ge chain lengths could be obtained by varying the averaged size of the A{sup II} cations: Ca{sub 0.45}Sr{sub 1.55}PbGe{sub 2} (new structure type; Pbam, a=791.64(5), b=2311.2(2), c=458.53(3) pm) contains planar six-membered chain segments [Ge{sub 6}]. Tetrameric pieces [Ge{sub 4}] are the conspicuous structure elements in Ca{sub 1.16}Sr{sub 0.84}SnGe{sub 2} and La{sub 2}InSi{sub 2} (La{sub 2}InNi{sub 2}-type; Pbam, a=781.01(2)/762.01(13), b=1477.95(3)/1494.38(6), c=457.004(9)/442.1(3) pm). The tetragonal form of ’La{sub 2}InSi{sub 2}{sup ′} (exact composition: La{sub 2}In{sub 1.07}Si{sub 1.93}, P4/mbm, a=1309.11(12), c=443.32(4) pm) also crystallizes in a new structure type, containing only [Si{sub 3}] trimers as cutouts of the planar chains. In all structures the Si/Ge zig-zag chains/chain segments are connected by In/Sn/Pb atoms to form planar M layers, which are separated by pure A layers. Band structure calculations within the FP-LAPW DFT approach together with the Zintl formalism, extended by the presence of hypervalent bonding of the heavier M′ elements, give insight into the chemical bonding of this series of p-block metallides. An analysis of the band structure for the border phases Sr{sub 2}PbGe{sub 2} and Ca{sub 2}SnGe{sub 2} shows the considerable π bonding contributions within the Ge building units, which also become apparent from the short Ge–Ge bond lengths. - Graphical abstract: Example of one of the mixed metallides A{sub 2}(In/Sn/Pb)(Si/Ge){sub 2} with planar Si/Ge zig-zag chain segments of variable lengths. - Highlights: • Mixed metallides A{sub 2}(In/Sn/Pb)(Si/Ge){sub 2} were prepared for A=Ca, Sr, Yb, La. • The structures exhibit planar Si/Ge zig-zag chain segments of variable lengths. • In, Sn and Pb atoms are connecting the Si/Ge anions to planar nets. • Atomic size effects are investigated by the synthesis of mixed Ca/Sr germanides. • Bandstructure calculations indicate Si/Ge–Si/Ge π bonding contributions.« less

New members of the A2 M ‧ M2″ structure family (A=Ca, Sr, Yb, La; M ‧ = In , Sn , Pb; M ″ = Si , Ge)

NASA Astrophysics Data System (ADS)

Jehle, Michael; Dürr, Ines; Fink, Saskia; Lang, Britta; Langenmaier, Michael; Steckhan, Julia; Röhr, Caroline

2015-01-01

The new mixed tetrelides Sr2PbGe2 and Yb2SnGe2, several mixed Ca/Sr (AII) germanides A2II (Sn, Pb)Ge2 and two polymorphs of La2 InSi2 represent new members of the general structure family of ternary alkaline-earth/lanthanoid main group silicides/germanides A2 M ‧ M2″ (M ‧ = In , Sn , Pb ; M ″ = Si , Ge). All compounds were synthesized from melts of the elements and their crystal structures have been determined by means of single crystal X-ray diffraction. Sr2PbGe2 (Cmmm, a=402.36(11), b=1542.3(4), c=463.27(10) pm) crystallizes with the Mn2AlB2 -type structure. In exhibiting infinite planar Ge zig-zag chains, it represents one border of the compound series. The other borderline case, where only [Ge2 ] dumbbells are left as Ge building units, is represented by the Ca/Yb tin germanides Ca2SnGe2 and Yb2SnGe2 (Mo2FeB2 -type; P4/mbm, a=748.58(13)/740.27(7), c=445.59(8)/435.26(5) pm). In between these two border structures compounds with variable Si/Ge chain lengths could be obtained by varying the averaged size of the AII cations: Ca0.45Sr1.55PbGe2 (new structure type; Pbam, a=791.64(5), b=2311.2(2), c=458.53(3) pm) contains planar six-membered chain segments [Ge6 ]. Tetrameric pieces [Ge4 ] are the conspicuous structure elements in Ca1.16Sr0.84SnGe2 and La2 InSi2 (La2InNi2 -type; Pbam, a=781.01(2)/762.01(13), b=1477.95(3)/1494.38(6), c=457.004(9)/442.1(3) pm). The tetragonal form of 'La2 In Si2‧ (exact composition: La2In1.07Si1.93, P4/mbm, a=1309.11(12), c=443.32(4) pm) also crystallizes in a new structure type, containing only [Si3 ] trimers as cutouts of the planar chains. In all structures the Si/Ge zig-zag chains/chain segments are connected by In/Sn/Pb atoms to form planar M layers, which are separated by pure A layers. Band structure calculations within the FP-LAPW DFT approach together with the Zintl formalism, extended by the presence of hypervalent bonding of the heavier M ‧ elements, give insight into the chemical bonding of this series of p-block metallides. An analysis of the band structure for the border phases Sr2PbGe2 and Ca2SnGe2 shows the considerable π bonding contributions within the Ge building units, which also become apparent from the short Ge-Ge bond lengths.

Evaporation-based Ge/.sup.68 Ga Separation

DOEpatents

Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

1981-01-01

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Uniaxial ferromagnetism of local uranium moments in hexagonal UBeGe

NASA Astrophysics Data System (ADS)

Gumeniuk, Roman; Yaresko, Alexander N.; Schnelle, Walter; Nicklas, Michael; Kvashnina, Kristina O.; Hennig, Christoph; Grin, Yuri; Leithe-Jasper, Andreas

2018-05-01

The new intermetallic uranium beryllium germanide UBeGe and its thorium analogon ThBeGe crystallize with the hexagonal ZrBeSi type of structure. Studies of magnetic, thermal, and transport properties were performed on polycrystalline samples between 1.8 and 750K. UBeGe is a uniaxial ferromagnet and there are indications for two magnetic transitions at TC(1 )≈160 K and TC(2 )≈150 K . The high paramagnetic effective moment μeff≈3.1 μB , x-ray absorption near-edge spectroscopy (XANES, 17-300 K), as well as theoretical DFT calculations indicate localized U 5 f2 states in UBeGe. ThBeGe is a diamagnetic metallic material with low density of states at the Fermi level.

New ternary superconducting germanides

NASA Astrophysics Data System (ADS)

Moschalkov, V. V.; Muttik, I. G.; Samarin, N. A.; Seropegin, Yu. D.; Rudometkina, M. V.

1991-12-01

We have studied the structure, electrical and magnetic properties of new ternary compounds with germanium and transition metals of IV and V groups (Ti 0.7V 0.3Ge 3, Hf 2V 3Ge, Zr 32-36V 32-36Ge 30-32, Hf 2Nb 3Ge 4, HfVGe, Zr 15-17V 39-40Ge 44-45, Hf 10.8-21.7V 36.0-42.8). The homogeneity fields for all new phases are determined. Resistivity (T) and magnetic susceptibility χ(T) are investigated at T=4.2…300 K. Two new superconductors have been found - Zr 32-36V 32-36Ge 30-32 and HfVGe with T c=4.7 K and 5.7 K, respectively.

Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Zhang, Wenfeng

2014-11-07

A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scalingmore » to 0.5 nm is also demonstrated based on these understandings.« less

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

PubMed

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suen, Nian-Tzu; Broda, Matthew; Bobev, Svilen, E-mail: bobev@udel.edu

Reported are the synthesis and the structural characterization of an extended family of rare-earth metal–germanides with a general formula RE{sub 5–x}Ca{sub x}Ge{sub 3} (RE=Y, Ce–Nd, Sm, Gd–Tm and Lu; x<2). All twelve phases are isotypic, crystallizing with the Mn{sub 5}Si{sub 3} structure type (Pearson index hP16, hexagonal space group P6{sub 3}/mcm); they are the Ca-substituted variants of the corresponding RE{sub 5}Ge{sub 3} binaries. Across the series, despite some small variations in the Ca-uptake, the unit cell volumes decrease monotonically, following the lanthanide contraction. Temperature dependent DC magnetization measurements reveal paramagnetic behavior in the high temperature range, and the obtained effectivemore » moments are consistent with free-ion RE{sup 3+} ground state, as expected from prior studies of the binary RE{sub 5}Ge{sub 3} phases. The onset of magnetic ordering is observed in the low temperature range, and complex magnetic interactions (ferromagnetic/ferrimagnetic) can be inferred, different from the binary phases RE{sub 5}Ge{sub 3}, which are known as antiferromagnetic. In order to understand the role of Ca in the bonding, the electronic structures of the La{sub 5}Ge{sub 3} and the hypothetical compounds La{sub 2}Ca{sub 3}Ge{sub 3} and La{sub 3}Ca{sub 2}Ge{sub 3} with ordered metal atoms are compared and discussed. - Graphical abstract: The family of rare-earth metal–calcium–germanides with the general formula RE{sub 5–x}Ca{sub x}Ge{sub 3} (RE=Y, Ce–Nd, Sm, Gd–Tm and Lu) crystallize in the hexagonal space group P6{sub 3}/mcm (No. 193, Pearson symbol hP16) with a structure that is a variant of the Mn{sub 5}Si{sub 3} structure type. - Highlights: • The newly synthesized RE{sub 5–x}Ca{sub x}Ge{sub 3} (RE=Y, Ce–Nd, Sm, Gd–Tm and Lu) constitute an extended family. • The structure is a substitution variant of the hexagonal Mn{sub 5}Si{sub 3} structure type. • Ca-uptake is the highest in the early members, and decreases for the late rare-earth metal analogs. • Experimental and theoretical work suggest limiting solubility range RE{sub ≈3}Ca{sub ≈2}Ge{sub 3}.« less

Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

DOEpatents

Travelli, A.

1985-10-25

A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

Nuclear reactor fuel structure containing uranium alloy wires embedded in a metallic matrix plate

DOEpatents

Travelli, Armando

1988-01-01

A flat or curved plate structure, to be used as fuel in a nuclear reactor, comprises elongated fissionable wires or strips embedded in a metallic continuous non-fissionable matrix plate. The wires or strips are made predominantly of a malleable uranium alloy, such as uranium silicide, uranium gallide or uranium germanide. The matrix plate is made predominantly of aluminum or an aluminum alloy. The wires or strips are located in a single row at the midsurface of the plate, parallel with one another and with the length dimension of the plate. The wires or strips are separated from each other, and from the surface of the plate, by sufficient thicknesses of matrix material, to provide structural integrity and effective fission product retention, under neutron irradiation. This construction makes it safely feasible to provide a high uranium density, so that the uranium enrichment with uranium 235 may be reduced below about 20%, to deter the reprocessing of the uranium for use in nuclear weapons.

Structure cristalline du composé intermétallique Ni18Ge12

PubMed Central

Kars, Mohammed; Herrero, Adrian Gómez; Roisnel, Thierry; Rebbah, Allaoua; Otero-Diáz, L. Carlos

2015-01-01

Single crystals of octa­deca­nickel dodeca­germanide were grown by chemical transport reaction. The inter­metallic compound crystallizes in a superstructure of the hexa­gonal NiAs type (B8 type). All atoms in the asymmetric unit lie on special positions except one Ni atom (two Ni atoms have site symmetry -6.. and another one has site symmetry .2. while the Ge atoms have site symmetries 32., m.. and 3..). In the structure, the Ni atoms are arranged in 11- or 13-vertex polyhedra (CN = 11–13). The coordination polyhedra of the Ge atoms are bicapped square anti­prisms (CN = 10) or 11-vertex polyhedra (CN = 11). The structure exhibits strong Ge⋯Ni inter­actions, but no close Ge⋯Ge contacts are observed. The Ni atoms with CN = 13 form infinite chains along [001] with an Ni—Ni distance of 2.491 (2) Å. PMID:25844198

Discovery of Lorentz-violating type II Weyl fermions in LaAlGe

PubMed Central

Xu, Su-Yang; Alidoust, Nasser; Chang, Guoqing; Lu, Hong; Singh, Bahadur; Belopolski, Ilya; Sanchez, Daniel S.; Zhang, Xiao; Bian, Guang; Zheng, Hao; Husanu, Marious-Adrian; Bian, Yi; Huang, Shin-Ming; Hsu, Chuang-Han; Chang, Tay-Rong; Jeng, Horng-Tay; Bansil, Arun; Neupert, Titus; Strocov, Vladimir N.; Lin, Hsin; Jia, Shuang; Hasan, M. Zahid

2017-01-01

In quantum field theory, Weyl fermions are relativistic particles that travel at the speed of light and strictly obey the celebrated Lorentz symmetry. Their low-energy condensed matter analogs are Weyl semimetals, which are conductors whose electronic excitations mimic the Weyl fermion equation of motion. Although the traditional (type I) emergent Weyl fermions observed in TaAs still approximately respect Lorentz symmetry, recently, the so-called type II Weyl semimetal has been proposed, where the emergent Weyl quasiparticles break the Lorentz symmetry so strongly that they cannot be smoothly connected to Lorentz symmetric Weyl particles. Despite some evidence of nontrivial surface states, the direct observation of the type II bulk Weyl fermions remains elusive. We present the direct observation of the type II Weyl fermions in crystalline solid lanthanum aluminum germanide (LaAlGe) based on our photoemission data alone, without reliance on band structure calculations. Moreover, our systematic data agree with the theoretical calculations, providing further support on our experimental results. PMID:28630919

The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru; Knotko, A.V.; Yapaskurt, V.O.

2015-05-15

The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{submore » 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were found to form at 1070 K from the binary Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3} compounds, while no detectable solubility was observed for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Highlights: • Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho. • Eight known ternary holmium nickel germanides were confirmed in Ho–Ni–Ge. • Four new holmium nickel germanides were detected in Ho–Ni–Ge. • Eight new rare earth nickel germanides were detected in (Y, Tb, Dy, Er–Yb)–Ni–Ge. • HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2},(Tb, Dy, Ho){sub 3}Ni{sub 11}Ge{sub 4} and Ho{sub 3}Ni{sub 2}Ge{sub 3} are paramagnet down to 5–7 K.« less

Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, K. E.; Murarka, S. P.; Lu, T.-M.; Lee, S. L.

1997-06-01

Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ˜1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.

Glassy vortex behavior in superconducting SrPd2Ge2 single crystals

NASA Astrophysics Data System (ADS)

Sung, N. H.; Jo, Y. J.; Cho, B. K.

2012-07-01

In this study we report the vortex-glass behavior of superconducting ternary germanide SrPd2Ge2 single crystals with a ThCr2Si2-type structure. We observed flux trapping and its nonexponential decay with time after the magnetic field was turned off at T = 2 K. In addition, we found that the diamagnetism in the zero field cooling (ZFC) mode below Tc was irreversible, depending on the temperature and field history, whereas the diamagnetism in the field-cooled warming (FCW) mode was reversible if the applied magnetic field was parallel to the c-axis. An irreversibility line Tr(H) was determined by the ZFC and FCW measurements at various magnetic fields, and the temperature dependence of Tr(H) was found to agree with the de Almeida-Thouless relation, H = H0[1-Tr(H)/Tc(0)]γ, where γ = 3/2. Including these vortex-glass behaviors, we discuss the critical current density, Jc(T), determined from isothermal magnetization measurements at various temperatures, and the pinning potential, determined from the slope of an Arrhenius plot, lnR(T,B) versus 1/T.

In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

DOE PAGES

Chen, Renjie; Nguyen, Binh-Minh; Tang, Wei; ...

2017-05-22

The metal-semiconductor interface in self-aligned contact formation can determine the overall performance of nanoscale devices. This interfacial morphology is predicted and well researched in homogenous semiconductor nanowires (NWs) but was not pursued in heterostructured core/shell nanowires. Here, we found here that the solid-state reactions between Ni and Ge/Si core/shell nanowires resulted in a protruded and a leading NiSiy segment into the channel. A single Ni 2Ge/NiSi y to Ge/Si core/shell interface was achieved by the selective shell removal near the Ni source/drain contact areas. In using in situ transmission electron microscopy, we measured the growth rate and anisotropic strain evolutionmore » in ultra-short channels. We also found elevated compressive strains near the interface between the compound contact and the NW and relatively lower strains near the center of the channel which increased exponentially below the 10 nm channel length to exceed 10% strain at ~3 nm lengths. These compressive strains are expected to result in a non-homogeneous energy band structure in Ge/Si core/shell NWs below 10 nm and potentially benefit their transistor performance.« less

Crystal structure and physical properties of new Ca{sub 2}TGe{sub 3} (T = Pd and Pt) germanides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimczuk, T., E-mail: tomasz.klimczuk@pg.gda.pl; Xie, Weiwei; Winiarski, M.J.

The crystallographic, electronic transport and thermal properties of Ca{sub 2}PdGe{sub 3} and Ca{sub 2}PtGe{sub 3} are reported. The compounds crystalize in an ordered variant of the AlB{sub 2} crystal structure, in space group P6/mmm, with the lattice parameters a = 8.4876(4) Å/8.4503(5) Å and c = 4.1911(3) Å/4.2302(3) Å for Ca{sub 2}PdGe{sub 3} and Ca{sub 2}PtGe{sub 3}, respectively. The resistivity data exhibit metallic behavior with residual-resistivity-ratios (RRR) of 13 for Ca{sub 2}PdGe{sub 3} and 6.5 for Ca{sub 2}PtGe{sub 3}. No superconducting transition is observed down to 0.4 K. Specific heat studies reveal similar values of the Debye temperatures and Sommerfeldmore » coefficients: Θ{sub D} = 298 K, γ = 4.1 mJ mol{sup −1} K{sup −2} and Θ{sub D} = 305 K, γ = 3.2 mJ mol{sup −1} K{sup −2} for Ca{sub 2}PdGe{sub 3} and Ca{sub 2}PtGe{sub 3}, respectively. The low value of γ is in agreement with the electronic structure calculations.« less

In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Renjie; Nguyen, Binh-Minh; Tang, Wei

The metal-semiconductor interface in self-aligned contact formation can determine the overall performance of nanoscale devices. This interfacial morphology is predicted and well researched in homogenous semiconductor nanowires (NWs) but was not pursued in heterostructured core/shell nanowires. Here, we found here that the solid-state reactions between Ni and Ge/Si core/shell nanowires resulted in a protruded and a leading NiSiy segment into the channel. A single Ni 2Ge/NiSi y to Ge/Si core/shell interface was achieved by the selective shell removal near the Ni source/drain contact areas. In using in situ transmission electron microscopy, we measured the growth rate and anisotropic strain evolutionmore » in ultra-short channels. We also found elevated compressive strains near the interface between the compound contact and the NW and relatively lower strains near the center of the channel which increased exponentially below the 10 nm channel length to exceed 10% strain at ~3 nm lengths. These compressive strains are expected to result in a non-homogeneous energy band structure in Ge/Si core/shell NWs below 10 nm and potentially benefit their transistor performance.« less

Superconductivity in Ternary Rare-Earth Transition Metal Silicides and Germanides with the SCANDIUM(5) COBALT(4) SILICON(10)-TYPE Structure.

NASA Astrophysics Data System (ADS)

Berg, Linda Sue

A systematic study of the superconducting and normal state properties of some ternary rare earth transition metal silicides and germanides of the Sc(,5)Co(,4)Si(,10) -type is reported in this work. Low temperature heat capacity measurements indicate the presence of a complicated phonon density of states in these structurally complex compounds. A better description of the phonon spectrum of the high T(,c) materials, Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), given by a model proposed by Junod et al.('1), is presented and discussed. The large values of (DELTA)C/(gamma)(,n)T(,c) and the electron-phonon coupling constant for these high T(,c) compounds indicate that they are strong-coupled superconductors. Relative to other ternary superconductors, many of these materials have large Debye temperatures. The BSC theory does not seem to afford an adequate description of the supercon- ducting state in these compounds. DC electrical resistivity measurements on these compounds show resistivity behaviors deviating from those exhibited by simple metals. The (rho)(T) data for Y(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10), indicate the presence of anomalies. Static molar magnetic susceptibility measurements performed on these compounds indicate (1) a small effective magnetic moment of 0.26(mu)(,B) on the Co atom and (2) anomalous behaviors in the Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), Y(,5)Ir(,4)Si(,10), Lu(,5)Ir(,4)Ge(,10), and Y(,5)Rh(,4)Ge(,10) data. It is suggested that the same mechanism, namely, the forma- tion of a charge- or spin-density wave, is causing the anomalous behaviors in both the resistivity and susceptibility data. Lastly, upper critical magnetic field measurements were performed on Sc(,5)Co(,4)Si(,10), Sc(,5)Rh(,4)Si(,10), Sc(,5)Ir(,4)Si(,10), Lu(,5)Rh(,4)Si(,10), Lu(,5)Ir(,4)Si(,10), and Y(,5)Os(,4)Ge(,10). Relative to the other five samples, Y(,5)Os(,4)Ge(,10) exhibits very high values for (-dH(,c2)/dT)(,Tc) = 10.2 kOe/ K and H(,c2)(0) = 60.4 kOe. Comparing the value of (-dH(,c2)/dT)(,Tc) gained from the fit of the data to the WHH theory to the calculated (-dH(,c2)/dT)(,Tc) yields various degrees of agreement for these com- pounds. Indications are also that (1) there seems to be little or no. Pauli limiting and (2) the spin-orbit effect appears to be negligible in these compounds. *DOE Report IS-T-1215. This work was performed under contract No. W-7405-Eng-82 with the U. S. Department of Energy. ('1)A. Junod, D. Bichsel, and J. Muller, Helv. Phys. Acta 52, 580 (1979).

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

Synthesis of nickel germanide (Ge12Ni19) nanoparticles for durable hydrogen evolution reaction in acid solutions.

PubMed

Chen, Jee-Yee; Jheng, Shao-Lou; Tuan, Hsing-Yu

2018-06-14

Desigining advanced materials as electrochemical catalysts for the hydrogen evolution reaction (HER) has caught great attention owing to the growing demand for clean and renewable energy. Nickel (Ni)-based compounds and alloys are promising non-noble-metal electrocatalysts due to their low cost and high activity. However, in most cases, Ni-based compounds and alloys have low durability in acid electrolyte, which limits their application in the electrolytic processes. In this study, monoclinic Ge12Ni19 nanoparticles were synthesized and exhibited high electrocatalytic activity and stability for the HER in acidic solution. Ge12Ni19 nanoparticles achieve an overpotential of 190 mV at cathodic current density of 10 mA cm-2 and a Tafel slope of 88.5 mV per decade in 0.50 M H2SO4 electrolyte. Moreover, the performance is maintained after a 10 000-cycle CV sweep (-0.3 to +0.1 V vs. RHE) or under a static overpotential of -0.7 V vs. RHE for 24 hours. The reported electrocatalytic performance of the Ge12Ni19 nanoparticles sufficiently proves the excellent endurance at lower required active overpotentials in acidic solution, enabling the broad applications of the Ni-based electrocatalysts. Finally, a large-area (5 cm2) electrocatalyst for HER was demonstrated for the first time. The great efficiency of the energy conversion performance sufficiently represented the potential of Ge12Ni19 nanoparticles as electrocatalysts in commercial fuel cells.

Magnetotransport and Heat Capacity in Ternary Compounds U3M2M‧3‧, M=Al, Ga; M=Si, Ge

NASA Astrophysics Data System (ADS)

Troć, R.; Rogl, P.; Tran, V. H.; Czopnik, A.

2001-05-01

We report detailed studies of magnetization, electrical resistivity, magnetoresistivity, and heat capacity performed on the novel family of intermetallic compounds U3M2M‧3, (M=Al, Ga, and M‧=Si, Ge). The present measurements support the earlier conclusions about the ferrimagnetic properties of silicides and ferromagnetic properties of germanides. The resistivity for both compounds U3{Al,Ga}2Si3 exhibits below TC a pronounced maximum observed for the first time in an actinoid-ferrimagnet, probably caused by (a) the reduction of the number of effective conduction carriers or (b) a SDW-type of spin-disorder scattering of electrons. Both low-temperature resistivity (except for U3Ga2Si3) and heat capacity may be described by a T-dependence involving a small gap Δ on the order of 30-50 K in the magnon dispersion. The Cp/T values at 2 K are enhanced and point to a medium-heavy fermion character of all these ternaries. Magnetoresistance for ferrimagnetic U3{Al,Ga}2Si3 is rather small but positive in correspondence of antiferromagnetic interactions. In correspondence to the ferromagnetic materials, negative magnetoresistance is encountered for U3{Al,Ga}2Ge3. Specific features in the temperature dependence of magnetoresistivity Δρ/ρ at various fields confirm the sinusoidal modulation of the magnetic structure for U3Al2Ge3 between 40 and 60 K. Also, such data for U3Ga2Ge3 present strong indications for a similar magnetic modulation between 63 and 93 K, yet to be discovered by neutron diffraction experiments. In addition, the transition at 63 K is furthermore well resolved in the specific heat data of U3Ga2Ge3.

The interplay of long-range magnetic order and single-ion anisotropy in rare earth nickel germanides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Islam, Z.

1999-05-10

This dissertation is concerned with the interplay of long-range order and anisotropy in the tetragonal RNi{sub 2}Ge{sub 2} (R = rare earth) family of compounds. Microscopic magnetic structures were studied using both neutron and x-ray resonant exchange scattering (XRES) techniques. The magnetic structures of Tb, Dy, Eu and Gd members have been determined using high-quality single-crystal samples. This work has correlated a strong Fermi surface nesting to the magnetic ordering in the RNi{sub 2}Ge{sub 2} compounds. Generalized susceptibility, {chi}{sub 0}(q), calculations found nesting to be responsible for both incommensurate ordering wave vector in GdNi{sub 2}Ge{sub 2}, and the commensurate structuremore » in EuNi{sub 2}Ge{sub 2}. A continuous transition from incommensurate to commensurate magnetic structures via band filling is predicted. The surprisingly higher T{sub N} in EuNi{sub 2}Ge{sub 2} than that in GdNi{sub 2}Ge{sub 2} is also explained. Next, all the metamagnetic phases in TbNi{sub 2}Ge{sub 2} with an applied field along the c axis have been characterized with neutron diffraction measurements. A mixed phase model for the first metamagnetic structure consisting of fully-saturated as well as reduced-moment Tb ions is presented. The moment reduction may be due to moment instability which is possible if the exchange is comparable to the low-lying CEF level splitting and the ground state is a singlet. In such a case, certain Tb sites may experience a local field below the critical value needed to reach saturation.« less

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1-x Sb x compounds

NASA Astrophysics Data System (ADS)

Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

2017-12-01

Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R  =  rare-earth, T   =  transition metal and X  =  p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x < 0.65 lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, x ≈ 0.7 , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro-ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for x = 0.75 indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe 1–xSb x compounds

DOE PAGES

Guillou, F.; Pathak, A. K.; Hackett, T. A.; ...

2017-11-09

Here, experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R = rare-earth,more » $ T$ = transition metal and X = p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions $$0.65 \\leqslant x \\leqslant 0.9$$ . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions $$0 \\leqslant x < 0.65$$ lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, $$x \\approx 0.7$$ , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro–ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for $x = 0.75$ indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.« less

Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe 1–xSb x compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillou, F.; Pathak, A. K.; Hackett, T. A.

Here, experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R = rare-earth,more » $ T$ = transition metal and X = p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions $$0.65 \\leqslant x \\leqslant 0.9$$ . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions $$0 \\leqslant x < 0.65$$ lead to a strong reduction of the Curie temperature compared to the GdScGe parent, but without affecting the saturation magnetization. With a further increase in Sb content, the first compositions showing the presence of the CeFeSi-type structure of the antimonide, $$x \\approx 0.7$$ , coincide with the appearance of an antiferromagnetic phase. The application of a finite magnetic field reveals a jump in magnetization toward a fully saturated ferromagnetic state. This antiferro–ferromagnetic transformation is not associated with a sizeable latent heat, as confirmed by heat capacity measurements. The electronic structure calculations for $x = 0.75$ indicate that the key factor in the conversion from the ferromagnetic CeScSi-type to the antiferromagnetic CeFeSi-type structure is the disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.« less

Synthesis, structure, and bonding of two lanthanum indium germanides with novel structures and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guloy, A.M.; Corbett, J.D.

1996-04-24

The new tetragonal phases La{sub 3}In{sub 4}Ge and La{sub 3}InGe are obtained from high-temperature reactions of the elements in welded Ta followed by annealing. The structures of both were established by single-crystal X-ray diffraction in tetragonal space group I4/mcm (Z = 4 and 16, {alpha} = 8.5165(3) and 12.3083(2) {Angstrom}, c = 11.9024(4) and 16.0776(4) {Angstrom}, respectively). La{sub 3}In{sub 4}Ge contains layers or slabs of three-connected indium built of puckered 8-rings and 4-rings, or of squashed tetrahedra ({open_quotes}butterflies{close_quotes}) interlinked at all vertices, and these are separated by layers of La and isolated Ge. The phase is deficient of being amore » Zintl phase by three electrons per formula unit and is better described in terms of an alternate optimized and delocalized bonding picture and an open-shell metallic better described in terms of an alternate optimized and delocalized bonding picture and an open-shell metallic behavior for the In slabs. The more complex La{sub 3}InGe, isostructural with Gd{sub 3}Ga{sub 2}, is also layered. This phase contains pairs of mixed-occupancy (0.75 In, 0.25 Ge) sites separated by 3.020 {Angstrom}, as well as isolated In and Ge atoms. The former appear to be fully reduced closed-shell atoms (relative to the bonded Ga dimers in Gd{sub 3}Ga{sub 2}) that are held in somewhat close proximity by cation matrix effects. The compound appears to be semiconducting and thus is a classical Zintl phase, (La{sup +3}){sub 3}In{sup {minus}5}Ge{sup {minus}4} in the simplest oxidation state notation. High Coulomb energies are presumably important for the nature of the bonding and the stabilities of both compounds.« less

Structural, magnetothermal, and magnetotransport properties of single crystal terbium silicon germanide and spontaneous generation of voltage in single crystal gadolinium silicon germanide and gadolinium

NASA Astrophysics Data System (ADS)

Zou, Min

A systematic study of single crystalline Tb5Si2.2Ge1.8, including magnetic field induced crystallographic and magnetic phase transformations, magnetocaloric effect, ferromagnetic short-range correlations, electrical resistivity, magnetoresistance, and spontaneous generation of voltage (SGV) has been presented. A study of SGV in single crystalline Gd5Si2Ge2 and Gd has also been included. The metamagnetic-like transitions and giant magnetocaloric effect were observed with the magnetic field applied parallel to the a- and c-axes, but not the b-axis in a Tb5Si 2.2Ge1.8 single crystal. The in-situ x-ray powder diffraction study indicates that these metamagnetic-like transitions are coupled to a crystallographic phase transformation occurring via strong magnetoelastic interactions. The magnetocrystalline anisotropy plays an important role in this system. Magnetic fields less than 40 kOe can not drive either the magnetic or the crystallographic phase transition to completion for Tb5Si2.2Ge1.8 powder due to the strong single ion anisotropy of Tb. Magnetic field dependencies of the critical temperatures of magnetic phase transitions of Tb5Si2.2Ge1.8 are highly anisotropic for both the main magnetic ordering process occurring around 120 K and a spin reorientation transition at ~70 K. Magnetic-field-induced phase transitions occur with the magnetic field applied isothermally along the a-and b-axes (but not along the c-axis) between 1.8 and 70 K in fields below 70 kOe. Strongly anisotropic thermal irreversibility is observed in the Griffiths phase regime between 120 and 200 K with applied fields ranging from 10 to 1000 Oe. Our data: (1) show that the magnetic and structural phase transitions around 120 K are narrowly decoupled; (2) uncover the anisotropy of ferromagnetic short-range order in the Griffiths phase; and (3) reveal some unusual magnetic domain effects in the long-range ordered state of the Tb5Si2.2Ge1.8 compound. The temperature-magnetic field phase diagrams with field applied along the three major crystallographic directions have been constructed. The positive colossal magnetoresistance (CMR) with a magnitude of ~150% was observed with the magnetic field applied parallel to the a-axis, but not the b- and c-axes in Tb5Si 2.2Ge1.8 single crystals. The electrical resistivity shows a low-temperature high-resistivity behavior (i.e. the resistivity at low temperature is higher after the transformation to the low temperature phase than the resistivity of the phase before the transition) along the a-axis, contrary to those along the b- and c-axes. The positive CMR effect originates from an intrinsic crystallographic phase coexistence state frozen below the Curie Temperature (TC). The differences in the temperature dependencies of electrical resistivities and longitudinal magnetoresistance along the a-axis and those along the b- and c-axes can be explained by the geometry of the phase boundaries at low temperatures, and the inability of the external magnetic field to induce the crystallographic phase transformation along the b- and c-axes. Temperature-induced SGVs were observed along all three principal crystallographic axes of Tb5Si2.2Ge1.8, but not in Gd. Field-induced SGVs were observed with magnetic fields less than 40 kOe applied along the a-axis of Tb5Si2.2Ge1.8, and the c-axis of Gd. The absence of the temperature induced SGV in Gd indicates the key role first-order phase transformations play in the appearance of the effect when temperature varies. The anisotropy of magnetic field induced SGV in Tb5Si2.2Ge1.8 and the existence of field induced SGV in Gd, highlight the importance of the magnetocaloric effect in bringing about the SGV. In single crystal and polycrystalline Gd5Si 2Ge2 during the coupled magneto-structural transformations, reversible and repeatable SGV responses of the materials to the temperature and magnetic field have been observed. The parameters of the response and the magnitude of the signal are anisotropic and rate dependent. The magnitude of the SGV signal, and the critical temperatures and critical magnetic fields at which the SGV occurs vary with the rate of temperature and magnetic field changes.

The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides

NASA Astrophysics Data System (ADS)

Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yuan, Fang; Mozharivskyj, Y.; Pani, M.; Provino, A.; Manfrinetti, P.

2015-05-01

The Ho-Ni-Ge system has been investigated at 1070 K and up to 60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi5Ge3 (YNi5Si3-type), HoNi2Ge2 (CeAl2Ga2-type), Ho2NiGe6 (Ce2CuGe6-type), HoNiGe3 (SmNiGe3-type), HoNi0.2÷0.6Ge2 (CeNiSi2-type), Ho37÷34Ni6÷24Ge57÷42 (AlB2-type), HoNiGe (TiNiSi-type), Ho3NiGe2 (La3NiGe2-type), the ternary system contains four new compounds: Ho3Ni11Ge4 (Sc3Ni11Ge4-type), HoNi3Ge2 (ErNi3Ge2-type), Ho3Ni2Ge3 (Hf3Ni2Si3-type) and Ho5Ni2Ge3 (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho2Ni17, HoNi5, HoNi7, HoNi3, HoNi2, HoNi and Ho2Ge3, but no detectable solubility was found for the other binary compounds in the Ho-Ni-Ge system. Based on the magnetization measurements, the HoNi5Ge3, HoNi3Ge2 and Ho3Ni11Ge4 (and isostructural {Tb, Dy}3Ni11Ge4) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho3Ni2Ge3 exhibits an antiferromagnetic transition at 7 K. Additionally, the crystal structure of the new isostructural phases {Y, Yb}Ni3Ge2 (ErNi3Ge2-type), Er3Ni11Ge4 (Sc3Ni11Ge4-type) and {Y, Tb, Dy, Er, Tm}3Ni2Ge3 (Hf3Ni2Si3-type) has been also investigated.

cis-trans Germanium chains in the intermetallic compounds ALi{sub 1-x}In{sub x}Ge{sub 2} and A{sub 2}(Li{sub 1-x}In{sub x}){sub 2}Ge{sub 3} (A=Sr, Ba, Eu)-experimental and theoretical studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, Tae-Soo; Bobev, Svilen, E-mail: bobev@udel.ed

Two types of strontium-, barium- and europium-containing germanides have been synthesized using high temperature reactions and characterized by single-crystal X-ray diffraction. All reported compounds also contain mixed-occupied Li and In atoms, resulting in quaternary phases with narrow homogeneity ranges. The first type comprises EuLi{sub 0.91(1)}In{sub 0.09}Ge{sub 2}, SrLi{sub 0.95(1)}In{sub 0.05}Ge{sub 2} and BaLi{sub 0.99(1)}In{sub 0.01}Ge{sub 2}, which crystallize in the orthorhombic space group Pnma (BaLi{sub 0.9}Mg{sub 0.1}Si{sub 2} structure type, Pearson code oP16). The lattice parameters are a=7.129(4)-7.405(4) A; b=4.426(3)-4.638(2) A; and c=11.462(7)-11.872(6) A. The second type includes Eu{sub 2}Li{sub 1.36(1)}In{sub 0.64}Ge{sub 3} and Sr{sub 2}Li{sub 1.45(1)}In{sub 0.55}Ge{sub 3}, whichmore » adopt the orthorhombic space group Cmcm (Ce{sub 2}Li{sub 2}Ge{sub 3} structure type, Pearson code oC28) with lattice parameters a=4.534(2)-4.618(2) A; b=19.347(8)-19.685(9) A; and c=7.164(3)-7.260(3) A. The polyanionic sub-structures in both cases feature one-dimensional Ge chains with alternating Ge-Ge bonds in cis- and trans-conformation. Theoretical studies using the tight-binding linear muffin-tin orbital (LMTO) method provide the rationale for optimizing the overall bonding by diminishing the {pi}-p delocalization along the Ge chains, accounting for the experimentally confirmed substitution of Li forIn. -- Graphical abstract: Presented are the single-crystal structures of two types of closely related intermetallics, as well as their band structures, calculated using tight-binding linear muffin-tin orbital (TB-LMTO-ASA) method. Display Omitted« less

Magneto-structural correlations in rare-earth cobalt pnictides

NASA Astrophysics Data System (ADS)

Thompson, Corey Mitchell

Magnetic materials are used in many applications such as credit cards, hard drives, electric motors, sensors, etc. Although a vast range of magnetic solids is available for these purposes, our ability to improve their efficiency and discover new materials remains paramount to the sustainable progress and economic profitability in many technological areas. The search for magnetic solids with improved performance requires fundamental understanding of correlations between the structural, electronic, and magnetic properties of existing materials, as well as active exploratory synthesis that targets the development of new magnets. Some of the strongest permanent magnets, Nd 2Fe14B, SmCo5, and Sm2Co17, combine transition and rare-earth metals, benefiting from the strong exchange between the 4f and 3d magnetic sublattices. Although these materials have been studied in great detail, the development of novel magnets requires thorough investigation of other 3d-4 f intermetallics, in order to gain further insights into correlations between their crystal structures and magnetic properties. Among many types of intermetallic materials, ternary pnictides RCo 2Pn2 (R = La, Ce, Pr, Nd; Pn = P, As) are of interest because, despite their simple crystal structures, they contain two magnetic sublattices, exchange interactions between which may lead to rich and unprecedented magnetic behavior. Nevertheless, magnetism of these materials was studied only to a limited extent, especially as compared to the extensive studies of their silicide and germanide analogues. The ThCr2Si2 structure type, to which these ternary pnictides belong, is one of the most ubiquitous atomic arrangements encountered among intermetallic compounds. It accounts for over 1000 known intermetallics and has received increased attention due to the recently discovered FeAs-based superconductors. This dissertation is devoted to the investigation of magnetostructural relationships and anomalous magnetic behaviors in rare earth-cobalt pnictides with the ThCr2Si2 structure type, as well as to the development of new synthetic approaches to the preparation of such materials. We use iso- and aliovalent substitutions as effective tools to probe magnetostructural correlations and establish general trends in the magnetic behavior of RCo 2Pn2 phases. The modification of the electronic band structure, which correlates with the changes in the crystal structure of the material, is found to act as the driving force that dictates the magnetic properties of these itinerant systems. We demonstrate how this knowledge can be used effectively to achieve diverse magnetic properties and relate them to specific structural characteristics of materials.

Discovery of Intermetallic Compounds from Traditional to Machine-Learning Approaches.

PubMed

Oliynyk, Anton O; Mar, Arthur

2018-01-16

Intermetallic compounds are bestowed by diverse compositions, complex structures, and useful properties for many materials applications. How metallic elements react to form these compounds and what structures they adopt remain challenging questions that defy predictability. Traditional approaches offer some rational strategies to prepare specific classes of intermetallics, such as targeting members within a modular homologous series, manipulating building blocks to assemble new structures, and filling interstitial sites to create stuffed variants. Because these strategies rely on precedent, they cannot foresee surprising results, by definition. Exploratory synthesis, whether through systematic phase diagram investigations or serendipity, is still essential for expanding our knowledge base. Eventually, the relationships may become too complex for the pattern recognition skills to be reliably or practically performed by humans. Complementing these traditional approaches, new machine-learning approaches may be a viable alternative for materials discovery, not only among intermetallics but also more generally to other chemical compounds. In this Account, we survey our own efforts to discover new intermetallic compounds, encompassing gallides, germanides, phosphides, arsenides, and others. We apply various machine-learning methods (such as support vector machine and random forest algorithms) to confront two significant questions in solid state chemistry. First, what crystal structures are adopted by a compound given an arbitrary composition? Initial efforts have focused on binary equiatomic phases AB, ternary equiatomic phases ABC, and full Heusler phases AB 2 C. Our analysis emphasizes the use of real experimental data and places special value on confirming predictions through experiment. Chemical descriptors are carefully chosen through a rigorous procedure called cluster resolution feature selection. Predictions for crystal structures are quantified by evaluating probabilities. Major results include the discovery of RhCd, the first new binary AB compound to be found in over 15 years, with a CsCl-type structure; the connection between "ambiguous" prediction probabilities and the phenomenon of polymorphism, as illustrated in the case of TiFeP (with TiNiSi- and ZrNiAl-type structures); and the preparation of new predicted Heusler phases MRu 2 Ga and RuM 2 Ga (M = first-row transition metal) that are not obvious candidates. Second, how can the search for materials with desired properties be accelerated? One particular application of strong current interest is thermoelectric materials, which present a particular challenge because their optimum performance depends on achieving a balance of many interrelated physical properties. Making use of a recommendation engine developed by Citrine Informatics, we have identified new candidates for thermoelectric materials, including previously unknown compounds (e.g., TiRu 2 Ga with Heusler structure; Mn(Ru 0.4 Ge 0.6 ) with CsCl-type structure) and previously reported compounds but counterintuitive candidates (e.g., Gd 12 Co 5 Bi). An important lesson in these investigations is that the machine-learning models are only as good as the experimental data used to develop them. Thus, experimental work will continue to be necessary to improve the predictions made by machine learning.

R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yarema, Maksym; Swiss Federal Laboratories for Materials Science and Technology; Zaremba, Oksana

The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formationmore » of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. Black-Right-Pointing-Pointer The structure of R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms. Black-Right-Pointing-Pointer In the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliynyk, Anton O.; Stoyko, Stanislav S.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca

Through arc-melting reactions of the elements and annealing at 800 °C, the ternary rare-earth germanides RE{sub 3}Ru{sub 2}Ge{sub 3} and RE{sub 3}Ir{sub 2}Ge{sub 3} have been prepared for most of the smaller RE components (RE=Y, Gd–Tm, Lu). In the iridium-containing reactions, the new phases RE{sub 2}IrGe{sub 2} were also generally formed as by-products. Powder X-ray diffraction revealed orthorhombic Hf{sub 3}Ni{sub 2}Si{sub 3}-type structures (space group Cmcm, Z=4) for RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) and monoclinic Sc{sub 2}CoSi{sub 2}-type structures (space group C2/m, Z=4) for RE{sub 2}IrGe{sub 2}. Full crystal structures were determined by single-crystal X-ray diffraction for all membersmore » of RE{sub 3}Ru{sub 2}Ge{sub 3} (a=4.2477(6) Å, b=10.7672(16) Å, c=13.894(2) Å for RE=Y; a=4.2610(3)–4.2045(8) Å, b=10.9103(8)–10.561(2) Å, c=14.0263(10)–13.639(3) Å in the progression of RE from Gd to Lu) and for Tb{sub 3}Ir{sub 2}Ge{sub 3} (a=4.2937(3) Å, b=10.4868(7) Å, c=14.2373(10) Å). Both structures can be described in terms of CrB- and ThCr{sub 2}Si{sub 2}-type slabs built from Ge-centred trigonal prisms. However, band structure calculations on Y{sub 3}Ru{sub 2}Ge{sub 3} support an alternative description for RE{sub 3}M{sub 2}Ge{sub 3} based on [M{sub 2}Ge{sub 3}] layers built from linked MGe{sub 4} tetrahedra, which emphasizes the strong M–Ge covalent bonds present. The temperature dependence of the electrical resistivity of RE{sub 3}Ru{sub 2}Ge{sub 3} generally indicates metallic behaviour but with low-temperature transitions visible for some members (RE=Gd, Tb, Dy) that are probably associated with magnetic ordering of the RE atoms. Anomalously, Y{sub 3}Ru{sub 2}Ge{sub 3} exhibits semiconductor-like behaviour of uncertain origin. Magnetic measurements on Dy{sub 3}Ru{sub 2}Ge{sub 3} reveal antiferromagnetic ordering at 3 K and several unusual field-dependent transitions suggestive of complex spin reorientation processes. - Graphical abstract: RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) adopts the Hf{sub 3}Ni{sub 2}Si{sub 3}-type structure containing slabs built up from Ge-centred trigonal prisms. - Highlights: • Crystal structures of RE{sub 3}Ru{sub 2}Ge{sub 3} (RE=Y, Gd–Tm, Lu) and Tb{sub 3}Ir{sub 2}Ge{sub 3} were determined. • Strong M–Ge covalent bonds were confirmed by band structure calculations. • Most RE{sub 3}Ru{sub 2}Ge{sub 3} members except Y{sub 3}Ru{sub 2}Ge{sub 3} exhibit metallic behaviour. • Dy{sub 3}Ru{sub 2}Ge{sub 3} displays unusual field-dependent magnetic transitions.« less

Phase equilibria in the La–Mg–Ge system at 500 °C and crystal structure of the new ternary compounds La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Negri, S., E-mail: serena.denegri@unige.it; Solokha, P.; Skrobańska, M.

2014-10-15

The whole 500 °C isothermal section of the La–Mg–Ge ternary system was constructed. The existence and crystal structure of three ternary compounds were confirmed: La{sub 2+x}Mg{sub 1−x}Ge{sub 2} (τ{sub 2}, P4/mbm, tP10–Mo{sub 2}FeB{sub 2}, 0≤x≤0.25), La{sub 4}Mg{sub 5}Ge{sub 6} (τ{sub 3}, Cmc2{sub 1}, oS60–Gd{sub 4}Zn{sub 5}Ge{sub 6}) and La{sub 4}Mg{sub 7}Ge{sub 6} (τ{sub 4}, C2/m, mS34, own structure type). Five novel compounds were identified and structurally characterized: La{sub 11}Mg{sub 2}Ge{sub 7} (τ{sub 1}, P4{sub 2}/ncm, tP88-8, own structure type, a=1.21338(5), c=1.57802(6) nm), LaMg{sub 3−x}Ge{sub 2} (τ{sub 5}, P3{sup ¯}1c, hP34-0.44, own structure type, x=0.407(5), a=0.78408(4), c=1.45257(7) nm), La{sub 6}Mg{sub 23}Gemore » (τ{sub 6}, Fm3{sup ¯}m, cF120–Zr{sub 6}Zn{sub 23}Si, a=1.46694(6) nm), La{sub 4}MgGe{sub 10−x} (τ{sub 7}, x=0.37(1), C2/m, mS60-1.46, own structure type, a=0.88403(8), b=0.86756(8), c=1.7709(2) nm, β=97.16°(1) and La{sub 2}MgGe{sub 6} (τ{sub 8}, Cmce, oS72–Ce{sub 2}(Ga{sub 0.1}Ge{sub 0.9}){sub 7}, a=0.8989(2), b=0.8517(2), c=2.1064(3) nm). Disordering phenomena were revealed in several La–Mg–Ge phases in terms of partially occupied sites. The crystal structures of La{sub 11}Mg{sub 2}Ge{sub 7} and LaMg{sub 3−x}Ge{sub 2} are discussed in details. The latter is a √3a×√3a×2c superstructure of the LaLi{sub 3}Sb{sub 2} structure type; the symmetry reduction scheme is shown in the Bärnighausen formalism terms. - Graphical abstract: La–Mg–Ge isothermal section at 500 °C and group–subgroup relation between the LaLi{sub 3}Sb{sub 2} (parent type) and LaMg{sub 3−x}Ge{sub 2} (derivative) structures. - Highlights: • Novel La−Mg−Ge compounds structure determination from X-ray single crystal data. • Disordering phenomena as common features of the studied germanides. • Bärnighausen formalism as a useful tool for accurate structure determination. • Full isothermal section of the La–Mg–Ge ternary system at 500 °C.« less