Influence of laser alloying with boron and niobium on microstructure and properties of Nimonic 80A-alloy

NASA Astrophysics Data System (ADS)

Makuch, N.; Piasecki, A.; Dziarski, P.; Kulka, M.

2015-12-01

Ni-base superalloys were widely used in aeronautics, chemical and petrochemical industries due to their high corrosion resistance, high creep and rupture strength at high temperature. However, these alloys were not considered for applications in which conditions of appreciable mechanical wear were predominant. The diffusion boriding provided suitable protection against wear. Unfortunately, this process required long duration and high temperature. In this study, instead of the diffusion process, the laser alloying with boron and niobium was used in order to produce the hard and wear resistant layer on Nimonic 80A-alloy. The laser-alloying was carried out as a two-step process. First, the external cylindrical surface of specimens was pre-placed with a paste containing boron and niobium. Then, the pre-placed coating and the thin surface layer of the substrate were re-melted by a laser beam. The high laser beam power (P=1.56 kW) and high averaging irradiance (E=49.66 kW/cm2) provided the thick laser re-melted zone. The laser-borided layers were significantly thicker (470 μm) in comparison with the layers obtained as a consequence of the diffusion boriding. Simultaneously, the high overlapping of multiple laser tracks (86%) caused that the laser-alloyed layer was uniform in respect of the thickness. The produced layer consisted of nickel borides (Ni3B, Ni2B, Ni4B3, NiB), chromium borides (CrB, Cr2B), niobium borides (NbB2, NbB) and Ni-phase. The presence of hard borides caused the increase in microhardness up to 1000 HV in the re-melted zone. However, the measured values were lower than those-characteristic of niobium borides, chromium borides and nickel borides. The presence of the soft Ni-phase in re-melted zone was the reason for such a situation. After laser alloying, the significant increase in abrasive wear resistance was also observed. The mass wear intensity factor, as well as the relative mass loss of the laser-alloyed specimens, was over 10 times smaller in comparison with untreated Nimonic 80A-alloy.

In Situ Solid-Gas Reactivity of Nanoscaled Metal Borides from Molten Salt Synthesis.

PubMed

Gouget, Guillaume; Debecker, Damien P; Kim, Ara; Olivieri, Giorgia; Gallet, Jean-Jacques; Bournel, Fabrice; Thomas, Cyril; Ersen, Ovidiu; Moldovan, Simona; Sanchez, Clément; Carenco, Sophie; Portehault, David

2017-08-07

Metal borides have mostly been studied as bulk materials. The nanoscale provides new opportunities to investigate the properties of these materials, e.g., nanoscale hardening and surface reactivity. Metal borides are often considered stable solids because of their covalent character, but little is known on their behavior under a reactive atmosphere, especially reductive gases. We use molten salt synthesis at 750 °C to provide cobalt monoboride (CoB) nanocrystals embedded in an amorphous layer of cobalt(II) and partially oxidized boron as a model platform to study morphological, chemical, and structural evolutions of the boride and the superficial layer exposed to argon, dihydrogen (H 2 ), and a mixture of H 2 and carbon dioxide (CO 2 ) through a multiscale in situ approach: environmental transmission electron microscopy, synchrotron-based near-ambient-pressure X-ray photoelectron spectroscopy, and near-edge X-ray absorption spectroscopy. Although the material is stable under argon, H 2 triggers at 400 °C decomposition of CoB, leading to cobalt(0) nanoparticles. We then show that H 2 activates CoB for the catalysis of CO 2 methanation. A similar decomposition process is also observed on NiB nanocrystals under oxidizing conditions at 300 °C. Our work highlights the instability under reactive atmospheres of nanocrystalline cobalt and nickel borides obtained from molten salt synthesis. Therefore, we question the general stability of metal borides with distinct compositions under such conditions. These results shed light on the actual species in metal boride catalysis and provide the framework for future applications of metal borides in their stability domains.

Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

NASA Astrophysics Data System (ADS)

Ballinger, Jared

Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase. Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels to promote diamond film surface modification. The future direction for continued research of nanostructured diamond coatings on microwave plasma CVD borided stainless steel should further investigate the adhesion of both borided interlayers and subsequent NSD films in addition to short, interrupted diamond depositions to study the interlayer/diamond film interface.

Plasma boriding of a cobalt-chromium alloy as an interlayer for nanostructured diamond growth

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A.

2015-02-01

Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt-chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B2H6) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal-boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

Analysis of Deformation Substructures in a Notched LCF Sample Under Dwell Condition in a Ni-Based Superalloy (PREPRINT)

DTIC Science & Technology

2012-08-01

interior, and carbides and borides at the grain boundaries. Blocky carbide particles can also be seen in the grain interior (Figure 1b). The borides ...can be seen distributed (b) higher magnification image of a typical grain boundary decorated with carbide and boride particles. Bi-modal distribution

Future Directions for Selected Topics in Physics and Materials Science

DTIC Science & Technology

2012-07-12

referred to as lightides (e.g. borides , nitrides, phosphides) • Materials for energy conversion, energy storage, energy transport and energy production...Distributed nanosystems and sensors • Strategy for multilayered combinatorics • lightides ( borides , nitrides, phosphides, • New applications for...Strategy for multilayered combinatorics Lightides ( borides , nitrides, phosphides) • Energy conversion, .storage and production • Precision control

Plasma metallurgical production of nanocrystalline borides and carbides

NASA Astrophysics Data System (ADS)

Galevsky, G. V.; Rudneva, V. V.; Cherepanov, A. N.; Galevsky, S. G.; Efimova, K. A.

2016-09-01

he experience in production and study of properties of nanocrystalline borides and chromium carbides, titanium, silicon was summarized. The design and features of the vertical three-jet once-through reactor with power 150 kW, used in the plasma metallurgical production, was described. The technological, thermotechnical and resource characteristics of the reactor were identified. The parameters of borides and carbides synthesis, their main characteristics in the nanodispersed state and equipment-technological scheme of production were provided. Evaluation of engineering-and-economical performance of the laboratory and industrial levels of borides and carbides production and the state corresponding to the segment of the world market was carried out.

The Growth Behavior of Titanium Boride Layers in α and β Phase Fields of Titanium

NASA Astrophysics Data System (ADS)

Lv, Xiaojun; Hu, Lingyun; Shuang, Yajing; Liu, Jianhua; Lai, Yanqing; Jiang, Liangxing; Li, Jie

2016-07-01

In this study, the commercially pure titanium was successfully electrochemical borided in a borax-based electrolyte. The process was carried out at a constant cathodic current density of 300 mA cm-2 and at temperatures of 1123 K and 1223 K (850 °C and 950 °C) for 0.5, 1, 2, 3, and 5 hours. The growth behavior of titanium boride layers in the α phase field of titanium was compared with that in the β phase field. After boriding, the presence of both the TiB2 top layer and TiB whisker sub-layer was confirmed by the X-ray diffraction (XRD) and scanning electron microscope. The relationship between the thickness of boride layers and boriding time was found to have a parabolic character in both α and β phase fields of titanium. The TiB whiskers showed ultra-fast growth rate in the β phase field. Its growth rate constant was found to be as high as 3.2002 × 10-13 m2 s-1. Besides, the chemical resistance of the TiB2 layer on the surface of titanium substrate was characterized by immersion tests in molten aluminum.

Kinetic Investigation and Wear Properties of Fe2B Layers on AISI 12L14 Steel

NASA Astrophysics Data System (ADS)

Keddam, M.; Ortiz-Dominguez, M.; Elias-Espinosa, M.; Arenas-Flores, A.; Zuno-Silva, J.; Zamarripa-Zepeda, D.; Gomez-Vargas, O. A.

2018-03-01

In the current study, the powder-pack boriding was applied to the AISI 12L14 steel in the temperature range 1123 K to 1273 K for an exposure time between 2 and 8 hours. The produced boride layer was composed of Fe2B with a sawtooth morphology. A diffusion model based on the integral method was applied to investigate the growth kinetics of Fe2B layers. As a main result, the boron diffusion coefficients in Fe2B were estimated by considering the principle of mass balance at the (Fe2B/substrate) interface with an inclusion of boride incubation times. The value of activation energy for boron diffusion in AISI 12L14 steel was estimated as 165 kJ mol-1 and compared with other values of activation energy found in the literature. An experimental validation of the present model was made by using four different boriding conditions. Furthermore, the Rockwell-C adhesion test was employed to assess the cohesion of boride layers to the base metal. The scratch and pin-on-disc tests were also carried out to analyze the effect of boriding on wear behavior of AISI 12L14 steel.

Suppression of Boride Formation in Transient Liquid Phase Bonding of Pairings of Parent Superalloy Materials with Different Compositions and Grain Structures and Resulting Mechanical Properties

NASA Astrophysics Data System (ADS)

Steuer, Susanne; Singer, Robert F.

2014-07-01

Two Ni-based superalloys, columnar grained Alloy 247 and single-crystal PWA1483, are joined by transient liquid phase bonding using an amorphous brazing foil containing boron as a melting point depressant. At lower brazing temperatures, two different morphologies of borides develop in both base materials: plate-like and globular ones. Their ratio to each other is temperature dependent. With very high brazing temperatures, the deleterious boride formation in Alloy 247 can be totally avoided, probably because the three-phase-field moves to higher alloying element contents. For the superalloy PWA1483, the formation of borides cannot be completely avoided at high brazing temperatures as incipient melting occurs. During subsequent solidification of these areas, Chinese-script-like borides precipitate. The mechanical properties (tensile tests at room and elevated temperatures and short-term creep rupture tests at elevated temperatures) for brazed samples without boride precipitation are very promising. Tensile strengths and creep times to 1 pct strain are comparable, respectively, higher than the ones of the weaker parent material for all tested temperatures and creep conditions (from 90 to 100 pct rsp. 175 to 250 pct).

Microstructure Evolution and Composition Control during the Processing of Thin-gage Metallic Foil (Preprint)

DTIC Science & Technology

2012-02-01

the presence of somewhat randomly-distributed carbides and borides (white particles in BSE images), this grain size was comparable to that observed...pinned by carbide/ boride particles (imaging white in Figure 8c). The very fine gamma-prime precipitates likely produced during magnetron sputtering...sputtered material. First, the carbide/ boride particles were nucleated and hence located preferentially at the grain boundaries in the sputtered

Novel Routes to Tune Thermal Conductivities and Thermoelectric Properties of Materials

DTIC Science & Technology

2012-11-15

expand the possibilities of borides as functional compou nds. A series of indium-free novel TCO compounds with novel crystal structures, has...powerful methods for modification were demonstrated in the borides , silicides and oxides. Introduction: The goal of this project is to...the possibility to modify the crystal structures can expand the possibilities of borides as functional compounds. A series of indium-free novel TCO

Alloying-Element Loss during High-Temperature Processing of a Nickel-Base Superalloy (Preprint)

DTIC Science & Technology

2013-01-01

precipitates, and the fine white/gray particles are carbides and borides . ............................................. 23 Figure 2. Aluminum...comparable size, and submicron carbides and borides . A fifteen-minute heat treatment at the subsolvus temperature used in the present work (i.e...precipitates, and ~0.3 volume pct. of carbides and borides with an average diameter of ~0.3 m (Figure 1) [5, 6]. B. Procedures To establish the

Amorphous Iron Borides: Preparation, Structure and Magnetic Properties.

DTIC Science & Technology

1982-09-28

temperature. External magnetic field experiments were performed in a superconducting solenoid with both source and absor- ber at 4.2 K. The observed...D-Ai20 919 AMORPHOUS IRON BORIDES: PREPARATION STRUCTURE AND i/i MAGNETIC PROPERTIES(U) JOHNS HOPKINS UNIV LAUREL NO APPLIED PHYSICS LRB K MOORJRNI...NATIONAL BUREAU OF STANOANOS-93-A 10 AMORPHOUS IRON BORIDES: PREPARATION, STRUCTURE ~AND MAGNETIC PROPERTIES FINAL REPORT Kishin Moorjani September 1982 U

Effect of Heat Treatment on Borides Precipitation and Mechanical Properties of CoCrFeNiAl1.8Cu0.7B0.3Si0.1 High-Entropy Alloy Prepared by Arc-Melting and Laser-Cladding

NASA Astrophysics Data System (ADS)

Zhang, H.; Tang, H.; He, Y. Z.; Zhang, J. L.; Li, W. H.; Guo, S.

2017-11-01

Effects of heat treatment on borides precipitation and mechanical properties of arc-melted and laser-cladded CoCrNiFeAl1.8Cu0.7B0.3Si0.1 high-entropy alloys were comparatively studied. The arc-melted alloy contains lots of long strip borides distributed in the body-centered cubic phase, with a hardness about 643 HV0.5. Laser-cladding can effectively inhibit the boride precipitation and the laser-cladded alloy is mainly composed of a simple bcc solid solution, with a high hardness about 769 HV0.5, indicating the strengthening effect by interstitial boron atoms is greater than the strengthening by borides precipitation. Heat treatments between 800°C and 1200°C can simultaneously improve the hardness and fracture toughness of arc-melted alloys, owing to the boride spheroidization, dissolution, re-precipitation, and hence the increased boron solubility and nano-precipitation in the bcc solid solution. By contrast, the hardness of laser-cladded alloys reduce after heat treatments in the same temperature range, due to the decreased boron solubility in the matrix.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

A study on the formation of solid state nanoscale materials using polyhedral borane compounds

NASA Astrophysics Data System (ADS)

Romero, Jennifer V.

The formation of boron containing materials using a variety of methods was explored. The pyrolysis of a metal boride precursor solution can be accomplished using a one-source method by combining TiCl4, B10H 14 and CH3CN in one reaction vessel and pyrolyzing it at temperatures above 900 °C. Amorphous dark blue colored films were obtained after the pyrolysis reactions. Well-defined spherical shaped grains or particles were observed by SEM. The amorphous films generated contained titanium, however, the determination of the boron content of the films was inconclusive. This one pot method making metal boride thin films has the advantage of being able to dictate the stoichiometry of the reactants. Another part of this work represents the first report of both the use of metal boride materials and the use of a titanium-based compound for the formation of nanotubes. This method provides a facile method for generating well-formed boron-containing carbon nanotubes in a "one-pot" process through an efficient aerosol process. The formation of metal boride corrosion resistant layers was also explored. It was shown that metallic substrates can be effectively boronized using paste mixtures containing boron carbide and borax. The formation of a Fe4B 2 iron boride phase was achieved, however, this iron boride phase does not give enough corrosion protection. The formation of a corrosion resistant metal boride coating with strong adhesion was accomplished by boronization of a thermal sprayed nickel layer on the surface of steel. Surfactants were explored as possible nanoreactors in which metal boride nanoparticles could be formed to use as nanotube growth catalyst via room temperature reaction. Different surfactants were used, but none of them successfully generated very well dispersed metal boride nanoparticles. Nanoparticles with varying shapes and sizes were generated which were highly amorphous. The carboxylic acid derivative of closo-C2B 10 cages was explored as a ligand in the hydrothermal preparation of coordination polymers with zinc salts. It was found that the stability of the cage is apparently insufficient under these conditions and cage degradation was observed. Consequently, a preliminary investigation of the preparation of dipyridyl derivatives of both the closo-C2B 10 and the closo-B12 cages was performed.

Synthesis and Characterization of YB4 Ceramics

DTIC Science & Technology

2011-06-24

capa bility at temperatures above 2000°C1 with adequate mechani cal properties and oxidation resistance. Refractory metal borides based on HfB2 and ZrB2...increase in the oxidation resistance was accomplished by the addition of the Group IV VI transition metal borides , which was the result of phase...metal borides for use as materials for ultra high temper ature (UHT) applications. However, for instance, yttrium tet raboride, YB4, appears promising as

Finding the Stable Structures of WxN1-x with an ab-initio High-Throughput Approach

DTIC Science & Technology

2014-03-13

cubic boron nitride[4], carbonitrides,[5] and transition metal borides .[6, 7] Over the past several years there has been considerable theoretical...include ionic and covalent structures which seem chemically similar to W-N. These include borides , carbides, oxides, and other nitrides. In this paper we...metallic alloys, [23–27] we extended it to include over fifty new structures. These include nitrides, oxides, borides , and carbides. The important

Magnesium Aluminum Borides as Explosive Materials

DTIC Science & Technology

2011-12-20

Metal Silicides , and Metal Borides by Chemical Vapour Deposition Using Single Organometallic Precursors,” Trans. Inst. Met. Finishing, 72, 127-129...391 (2003). 62. X. Xiaojing, D. Bohua, Q. Zuanhui, and L. Yuanhui, “ Preparation and Synthesis Mechanism of Li-B Alloy,” Rare Metal Materials and...SUPPLEMENTARY NOTES 14. ABSTRACT Metal boride.; and boroo carbide Witted l’"irh Al ’I\\· ere compared co B. Mg. Al Mg:-AJ and Si a.s poteotia! fuel ad.diti

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

NASA Astrophysics Data System (ADS)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride compounds. The barrier height obtained on n GaN was ˜0-5-0.6 eV which was low compared to those obtained by Pt or Ni. This barrier height is too low for use as a gate contact and they can only have limited use, perhaps, in gas sensors where large leakage current can be tolerated in exchange for better thermal reliability. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB 2/Au) and were subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. The need for sputter deposition of the borides causes' problem in achieving significantly lower specific contact resistance than with conventional schemes deposited using e-beam evaporation. The borides also seem to be, in general, good getters for oxygen leading to sheet resistivity issues. Ir/Au Schottky contacts and Ti/Al/Ir/Au ohmic contacts on n-type GaN were investigated as a function of annealing temperature and compared to their more common Ni-based counterparts. The Ir/Au ohmic contacts on n-type GaN with n˜1017 cm-3 exhibited barrier heights of 0.55 eV after annealing at 700°C and displayed less intermixing of the contact metals compared to Ni/Au. A minimum specific contact resistance of 1.6 x 10-6 O.cm2 was obtained for the ohmic contacts on n-type GaN with n˜1018 cm-3 after annealing at 900°C. The measurement temperature dependence of contact resistance was similar for both Ti/Al/Ir/Au and Ti/Al/Ni/Au, suggesting the same transport mechanism was present in both types of contacts. The Ir-based ohmic contacts displayed superior thermal aging characteristics at 350°C. Auger Electron Spectroscopy showed that Ir is a superior diffusion barrier at these moderate temperatures than Ni.

Fabrication and Characterization of Plasma Electrolytic Borocarburized Layers on Q235 Low-Carbon Steel at Different Discharge Voltages

NASA Astrophysics Data System (ADS)

Wang, Bin; Wu, Jie; Jin, Xiaoyue; Wu, Xiaoling; Wu, Zhenglong; Xue, Wenbin

The influence of applied voltage on the plasma electrolytic borocarburizing (PEB/C) layer of Q235 low-carbon steel in high-concentration borax solution was investigated. XRD and XPS spectra of PEB/C layer confirmed that the modified boride layer mainly consisted of Fe2B phase, and the FeB phase only exists in the loose top layer. The applied voltage on Q235 steel played a key role in determining the properties of hardened layers. The thickness and microhardness of boride layers increased with the increase of the applied voltage, which led to superior corrosion and wear resistances of Q235 low-carbon steel. The diffusion coefficient (D) of boride layer at 280, 300 and 330V increased with borocarburizing temperature and ranged from 0.062×10-12m2/s to 0.462×10-12m2/s. The activation energy (Q) of boride layer growth during PEB/C treatment was only 52.83kJṡmol-1, which was much lower than that of the conventional boriding process.

Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kon, O., E-mail: okon42@htotmail.com; Pazarlioglu, S.; Sen, S.

2015-03-30

In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurementsmore » were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.« less

Crystal structure and phase stability of tungsten borides

NASA Astrophysics Data System (ADS)

Li, Quan; Zhou, Dan; Ma, Yanming; Chen, Changfeng

2013-03-01

We address the longstanding and controversial issue of ground-state structures of technically important tungsten borides using a first-principles structural search method via a particle-swarm optimization (PSO) algorithm. We have explored a large set of stable chemical compositions (convex hull) and clarified the ground-state structures for a wide range of boron concentrations, including W2B, W3B2,WB,W2B3, WB2,W2B5, WB3, and WB4. We further assessed relative stability of various tungsten borides and compared the calculated results with previously reported experimental data. The phase diagram predicted by the presented calculations may serve as a useful guide for synthesis of a variety of tungsten borides. This work was supported by DOE Grant No. DE-FC52-06NA26274.

High Energy Advanced Thermal Storage for Spacecraft Solar Thermal Power and Propulsion Systems

DTIC Science & Technology

2011-10-12

Vol. 108, No. 6, June 1961, pp. 568-572. 38. Storms, E. and Mueller, B., "Phase Relations and Thermodynamic Properties of Transition Metal Borides ...T., and Naka, S., "Formation Process of Tungsten Borides by Solid State Reaction Between Tungsten and Amorphous Boron," Journal of Materials...Molybdenum- Borides ," Journal of Metals, September 1952, pp. 983-988. 41. Ellis, R.C., “Various Preparations of Elemental Boron,” Proceedings of the 1st

Finding the Stable Structures of N1-xWx with an Ab Initio High-Throughput Approach

DTIC Science & Technology

2015-05-26

W. These include borides , carbides, oxides, and other nitrides. We also invented many structures to mimic the random pattern of vacancies on both the...structures. These include nitrides, oxides, borides , and carbides, as well as supercells of standard structures with atoms removed to mimic the random patter...1930). [15] R. Kiessling and Y. H. Liu, Thermal stability of the chromium, iron, and tungsten borides in streaming ammonia and the existence of a new

Molten Boron Phase-Change Thermal Energy Storage to Augment Solar Thermal Propulsion Systems

DTIC Science & Technology

2011-07-13

Thermodynamic Properties of Transition Metal Borides . I. The Molybdenum-boron system and Elemental Boron," Journal of Physical Chemistry, Vol. 81...February 1977, pp. 318-324. 38Itoh, H., Matsudaira, T., and Naka, S., "Formation Process of Tungsten Borides by Solid State Reaction Between Tungsten...Molybdenum-Boron and Some Properties of The Molybdenum- Borides ," Journal of Metals, September 1952, pp. 983-988. 40Stout, N. D., Mar, R. W., and Boo, W. O

Effects of Tungsten Addition on the Microstructure and Corrosion Resistance of Fe-3.5B Alloy in Liquid Zinc

PubMed Central

Liu, Xin; Wang, Mengmeng; Yin, Fucheng; Ouyang, Xuemei; Li, Zhi

2017-01-01

The effects of tungsten addition on the microstructure and corrosion resistance of Fe-3.5B alloys in a liquid zinc bath at 520 °C were investigated by means of scanning electron microscopy, X-ray diffraction and electron probe micro-analysis. The microstructure evolution in different alloys is analyzed and discussed using an extrapolated Fe-B-W ternary phase diagram. Experimental results show that there are three kinds of borides, the reticular (Fe, W)2B, the rod-like (Fe, W)3B and flower-like FeWB. The addition of tungsten can refine the microstructure and improve the stability of the reticular borides. Besides, it is beneficial to the formation of the metastable (Fe, W)3B phase. The resultant Fe-3.5B-11W (wt %) alloy possesses excellent corrosion resistance to liquid zinc. When tungsten content exceeds 11 wt %, the formed flower-like FeWB phase destroys the integrity of the reticular borides and results in the deterioration of the corrosion resistance. Also, the corrosion failure resulting from the spalling of borides due to the initiation of micro-cracks in the grain boundary of borides is discussed in this paper. PMID:28772759

Non-Contact Tabletop Mechanical Testing of Ultra-High Temperature Ceramics

DTIC Science & Technology

2012-05-01

class of refractory materials including transition metal borides , carbides and nitrides e.g. ZrB2l HfB2) ZrC, HfC, TaC, HfN and ZrN. They recently...ike oxidizing atmospheres, at very high temperatures Refractory borides like ZrB2 and HfB2 have extremely high melting temperatures (over 3000°C...But borides are very poor in oxidation resistance, due to the nature of thär oxides Non-protective ZrCfe or Hf02 and volatile liquid B203. Addition

Dislocation Decorrelation and Relationship to Deformation Microtwins during Creep of a Gamma’ Precipitate Strengthened Ni-based Superalloy

DTIC Science & Technology

2011-11-01

Deformation is highly localized around stress concentrators such as carbides, borides and serrated grain boundaries, which act as sources of a/2h110i...highly localized around stress concentrators such as carbides, borides and serrated grain boundaries, which act as sources of a/2h110i matrix-type...phase at different thicknesses. 7328 R.R. Unocic et al. / Acta Materialia 59 (2011) 7325–7339 the image. A number of carbide and/or boride phases are

Beta cell device using icosahedral boride compounds

DOEpatents

Aselage, Terrence L.; Emin, David

2002-01-01

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15

Nano-Disperse Borides and Carbides: Plasma Technology Production, Specific Properties, Economic Evaluation

NASA Astrophysics Data System (ADS)

Galevskii, G. V.; Rudneva, V. V.; Galevskii, S. G.; Tomas, K. I.; Zubkov, M. S.

2016-04-01

The experience of production and study on properties of nano-disperse chromium and titanium borides and carbides, and silicon carbide has been generalized. The structure and special service aspects of utilized plasma-metallurgical complex equipped with a three-jet direct-flow reactor with a capacity of 150 kW have been outlined. Processing, heat engineering and service life characteristics of the reactor are specified. The synthesis parameters of borides and carbides, as well as their basic characteristics in nano-disperse condition and their production flow diagram are outlined. Engineering and economic performance of synthesizing borides in laboratory and industrial conditions is assessed, and the respective segment of the international market as well. The work is performed at State Siberian Industrial University as a project part of the State Order of Ministry of Science and Education of the Russian Federation No. 11.1531/2014/K.

The effect of boriding on wear resistance of cold work tool steel

NASA Astrophysics Data System (ADS)

Anzawa, Y.; Koyama, S.; Shohji, I.

2017-05-01

Recently, boriding has attracted extensive attention as surface stiffening processing of plain steel. In this research, the influence of processing time on the formation layer of cold work tool steel (KD11MAX) by Al added fused salt bath was examined. In addition, in order to improve the abrasion resistance of KD11MAX, the effect of the treatment of boronization on the formation layer has been investigated. Boriding were performed in molten borax which contained about 10 mass% Al at processing time of 1.8 ~ 7.2 ks (processing temperature of 1303 K). As a result of the examination, the hardness of the boriding layer becomes about 1900 HV when the processing time of 3.6 ks. Also the abrasion resistance has improved remarkably. Furthermore, it was revealed that the formation layer was boronized iron from the Vickers hardness and analysis of the X-ray diffraction measurement.

Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

PubMed

Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-08-01

Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Kinetics and Tribological Characterization of Pack-Borided AISI 1025 Steel

NASA Astrophysics Data System (ADS)

Gómez-Vargas, O. A.; Keddam, M.; Ortiz-Domínguez, M.

2017-03-01

In this present study, the AISI 1025 steel was pack-borided in the temperature range of 1,123-1,273 K for different treatment times ranging from 2 to 8 h. A diffusion model was suggested to estimate the boron diffusion coefficients in the Fe2B layers. As a result, the boron activation energy for the AISI 1025 steel was estimated as 174.36 kJ/mol. This value of energy was compared with the literature data. To extend the validity of the present model, other additional boriding conditions were considered. The boride layers formed on the AISI 1025 steel were characterized by the following experimental techniques: scanning electron microscopy, X-ray diffraction analysis and the Daimler-Benz Rockwell-C indentation technique. Finally, the scratch and pin-on-disc tests for wear resistance were achieved using an LG Motion Ltd and a CSM tribometer, respectively, under dry sliding conditions.

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Effect of borides on hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Xuan

To investigate borides effect on the hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel, hot compression tests at the temperatures of 950– 1150 °C and the strain rates of 0.01– 10 s{sup −1} were performed. Flow stress curves indicated that borides increased the material's stress level at low temperature but the strength was sacrificed at temperatures above 1100 °C. A hyperbolic-sine equation was used to characterize the dependence of the flow stress on the deformation temperature and strain rate. The hot deformation activation energy and stress exponent were determined to be 355 kJ/mol and 3.2,more » respectively. The main factors leading to activation energy and stress exponent of studied steel lower than those of commercial 304 stainless steel were discussed. Processing maps at the strains of 0.1, 0.3, 0.5, and 0.7 showed that flow instability mainly concentrated at 950– 1150 °C and strain rate higher than 0.6 s{sup −1}. Results of microstructure illustrated that dynamic recrystallization was fully completed at both high temperature-low strain rate and low temperature-high strain rate. In the instability region cracks were generated in addition to cavities. Interestingly, borides maintained a preferential orientation resulting from particle rotation during compression. - Highlights: •The decrement of activation energy was affected by boride and boron solution. •The decrease of stress exponent was influenced by composition and Cottrell atmosphere. •Boride represented a preferential orientation caused by particle rotation.« less

On the Correlation between Morphology of alpha and Its Crystallographic Orientation Relationship with TiB and Beta in Boron Containing Ti-5Al-5Mo-5V-3Cr-0.5Fe Alloy (Preprint)

DTIC Science & Technology

2012-01-01

submitted to Metallurgical Transactions. This document contains color. 14. ABSTRACT While the role of borides on the microstructure of titanium...Ohio, U.S.A. Abstract While the role of borides on the microstructure of titanium alloys has been discussed in many previous reports, this paper...morphology of  precipitates nucleating from boride precipitates present in the  matrix of a titanium alloy; and (b) to investigate the role of presence or

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Effect of mechanical activation on jell boronizing treatment of the AISI 4140

NASA Astrophysics Data System (ADS)

Yılmaz, S. O.; Karataş, S.

2013-06-01

The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO2-Na2O) powders for 873-1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe2B sublayers as function of treatment time and temperature in the range of 873-1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000-2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe2B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

Yttria Nanoparticle Reinforced Commercially Pure (CP) Titanium

DTIC Science & Technology

2011-09-01

nanoparticles as well as titanium boride (TiB) reinforcements were produced through gas atomization. After consolidation and extrusion, room temperature...pure FE iron O oxygen Ti titanium TiB titanium boride TYS tensile yield strength UTS ultimate tensile strength wt% weight percent Y2O3

Growth kinetics of borided layers: Artificial neural network and least square approaches

NASA Astrophysics Data System (ADS)

Campos, I.; Islas, M.; Ramírez, G.; VillaVelázquez, C.; Mota, C.

2007-05-01

The present study evaluates the growth kinetics of the boride layer Fe 2B in AISI 1045 steel, by means of neural networks and the least square techniques. The Fe 2B phase was formed at the material surface using the paste boriding process. The surface boron potential was modified considering different boron paste thicknesses, with exposure times of 2, 4 and 6 h, and treatment temperatures of 1193, 1223 and 1273 K. The neural network and the least square models were set by the layer thickness of Fe 2B phase, and assuming that the growth of the boride layer follows a parabolic law. The reliability of the techniques used is compared with a set of experiments at a temperature of 1223 K with 5 h of treatment time and boron potentials of 2, 3, 4 and 5 mm. The results of the Fe 2B layer thicknesses show a mean error of 5.31% for the neural network and 3.42% for the least square method.

Selection of peptides binding to metallic borides by screening M13 phage display libraries.

PubMed

Ploss, Martin; Facey, Sandra J; Bruhn, Carina; Zemel, Limor; Hofmann, Kathrin; Stark, Robert W; Albert, Barbara; Hauer, Bernhard

2014-02-10

Metal borides are a class of inorganic solids that is much less known and investigated than for example metal oxides or intermetallics. At the same time it is a highly versatile and interesting class of compounds in terms of physical and chemical properties, like semiconductivity, ferromagnetism, or catalytic activity. This makes these substances attractive for the generation of new materials. Very little is known about the interaction between organic materials and borides. To generate nanostructured and composite materials which consist of metal borides and organic modifiers it is necessary to develop new synthetic strategies. Phage peptide display libraries are commonly used to select peptides that bind specifically to metals, metal oxides, and semiconductors. Further, these binding peptides can serve as templates to control the nucleation and growth of inorganic nanoparticles. Additionally, the combination of two different binding motifs into a single bifunctional phage could be useful for the generation of new composite materials. In this study, we have identified a unique set of sequences that bind to amorphous and crystalline nickel boride (Ni3B) nanoparticles, from a random peptide library using the phage display technique. Using this technique, strong binders were identified that are selective for nickel boride. Sequence analysis of the peptides revealed that the sequences exhibit similar, yet subtle different patterns of amino acid usage. Although a predominant binding motif was not observed, certain charged amino acids emerged as essential in specific binding to both substrates. The 7-mer peptide sequence LGFREKE, isolated on amorphous Ni3B emerged as the best binder for both substrates. Fluorescence microscopy and atomic force microscopy confirmed the specific binding affinity of LGFREKE expressing phage to amorphous and crystalline Ni3B nanoparticles. This study is, to our knowledge, the first to identify peptides that bind specifically to amorphous and to crystalline Ni3B nanoparticles. We think that the identified strong binding sequences described here could potentially serve for the utilisation of M13 phage as a viable alternative to other methods to create tailor-made boride composite materials or new catalytic surfaces by a biologically driven nano-assembly synthesis and structuring.

Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

PubMed Central

Friedrich, Alexandra; Winkler, Björn; Juarez-Arellano, Erick A.; Bayarjargal, Lkhamsuren

2011-01-01

Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p,T) stability, compressibility and hardness is described as obtained from experiments. PMID:28824101

Directionally Solidified Eutectic Ceramics for Multifunctional Aerospace Applications

DTIC Science & Technology

2013-01-01

eutectic materials development through a new initiative entitled Boride Eutectic Project. These results first time organize and populate materials...property databases, and utilize an iterative feedback routine to constantly improve the design process of the boride eutectics LaB6-MeB2 (Me = Zr, Hf, Ti

Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing

DOEpatents

Cook, Bruce A.; Harringa, Joel L.; Russell, Alan M.

2002-08-13

A ceramic material which is an orthorhombic boride of the general formula: AlMgB.sub.14 :X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40 GPa or greater.

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

NASA Technical Reports Server (NTRS)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Theoretical and Experimental Investigations on the Mechanism of Carbothermal Reduction of Zirconia (Preprint)

DTIC Science & Technology

2012-08-01

Properties. Abyss Books, Washington, D.C., 2002. 2. G. Montel, A. Lebugle and H. Pastor. "Manufacture of Materials Containing Refractory Borides ...and ZrO2," International Journal of Refractory Metals and Hard Materials, 17, 235-43 (1999). 10. A.W. Weimer, Carbide, nitride and boride

Adhesive and Cohesive Strength in FeB/Fe2B Systems

NASA Astrophysics Data System (ADS)

Meneses-Amador, A.; Blancas-Pérez, D.; Corpus-Mejía, R.; Rodríguez-Castro, G. A.; Martínez-Trinidad, J.; Jiménez-Tinoco, L. F.

2018-05-01

In this work, FeB/Fe2B systems were evaluated by the scratch test. The powder-pack boriding process was performed on the surface of AISI M2 steel. The mechanical parameters, such as yield stress and Young's modulus of the boride layer, were obtained by the instrumented indentation technique. Residual stresses produced on the boride layer were estimated by using the x-ray diffraction (XRD) technique. The scratch test was performed in order to evaluate the cohesive/adhesive strength of the FeB/Fe2B coating. In addition, a numerical evaluation of the scratch test on boride layers was performed by the finite element method. Maximum principal stresses were related to the failure mechanisms observed by the experimental scratch test. Shear stresses at the interfaces of the FeB/Fe2B/substrate system were also evaluated. Finally, the results obtained provide essential information about the effect of the layer thickness, the residual stresses, and the resilience modulus on the cohesive/adhesive strength in FeB/Fe2B systems.

The Effects of Borides on the Mechanical Properties of TLPB Repaired Inconel 738 Superalloy

NASA Astrophysics Data System (ADS)

Wei, J.; Ye, Y.; Sun, Z.; Zou, G.; Bai, H.; Wu, A.; Liu, L.

2017-10-01

The transient liquid phase diffusion bonding (TLPB) method was used to repair an artificial crack in Inconel 738, which was notched by a femtosecond laser. Mixed ratios of BNi-1a:DF-4B were investigated at the bonding temperature of 1373 K (1100 °C) for 2 to 36 hours. The effect of borides on the mechanical properties of TLPB repaired joints was studied through analysis of the microstructure, fracture path, and morphology observations. The borides formation, morphology, distribution, and joints strength were studied in detail. The results showed that the diffusion of B can either increase or decrease the joint strength, depending on its distribution and morphology. The amount of large blocky Ni-B compounds in the precipitate zone were reduced with increasing holding time, which resulted in an increase in joint strength. Nevertheless, further increasing the holding time led to a decrease in joint strength because of the formation of continuous acicular borides in the diffusion-affected zone. The fracture modes of TLPB joints were also discussed on the basis of the microstructure and fractography.

Micro-Abrasion Wear Resistance of Borided 316L Stainless Steel and AISI 1018 Steel

NASA Astrophysics Data System (ADS)

Reséndiz-Calderon, C. D.; Rodríguez-Castro, G. A.; Meneses-Amador, A.; Campos-Silva, I. E.; Andraca-Adame, J.; Palomar-Pardavé, M. E.; Gallardo-Hernández, E. A.

2017-11-01

The 316L stainless steel has high corrosion resistance but low tribological performance. In different industrial sectors (biomedical, chemical, petrochemical, and nuclear engineering), improvement upon wear resistance of 316L stainless steel components using accessible and inexpensive methods is critical. The AISI 1018 steel is widely used in industry, but its tribological performance is not the best among steels. Therefore, in this study the behavior of the borided 316L stainless steel and 1018 steel is evaluated under micro-abrasion wear. The boriding was carried out at 1223 K over 6 h of exposure time, resulting in a biphase layer composed of FeB/Fe2B phases. In order to evaluate Fe2B phase with no influence from FeB phase, AISI 1018 steel samples were borided at 1273 K for over 20 min and then diffusion annealed at 1273 K over 2 h to obtain a Fe2B mono-phase layer. Micro-abrasion wear resistance was evaluated by a commercial micro-abrasion testing rig using a mix of F-1200 SiC particles with deionized water as abrasive slurry. The obtained wear rates for FeB and Fe2B phases and for the 316L stainless steel were compared. Wear resistance of 316L stainless steel increases after boriding. The wear mechanisms for both phases and for the stainless steel were identified. Also, transient conditions for rolling and grooving abrasion were determined for the FeB and Fe2B phases.

Surface decoration through electrostatic interaction leading to enhanced reactivity: Low temperature synthesis of nanostructured chromium borides (CrB and CrB{sub 2})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menaka,; Kumar, Bharat; Kumar, Sandeep

The present study describes a novel low temperature route at ambient pressure for the synthesis of nanocrystalline chromium borides (CrB and CrB{sub 2}) without using any flux or additives. The favorable and intimate mixing of nanoparticles of chromium acetate (Cr source) and boron forms an active chromium–boron precursor which decomposes at much lower temperature (400 °C) to form CrB (which is ∼1000 °C less than the known ambient pressure synthesis). The chromium acetate nanoparticles (∼5 nm) decorate the larger boron particles (150–200 nm) due to electrostatic interactions resulting from opposing surface charges of boron (zeta potential:+48.101 mV) and chromium acetatemore » (zeta potential:−4.021 mV) in ethanolic medium and is evident in the TEM micrographs. The above method leads to the formation of pure CrB film like structure at 400 °C and nanospheres (40–60 nm) at 600 °C. Also, chromium diboride (CrB{sub 2}) nanoparticles (25 nm) could be obtained at 1000 °C. - Graphical abstract: Variation of surface charge of reactants, precursor and the products, chromium borides (CrB and CrB{sub 2}). Highlights: ► Novel borothermal reduction process for synthesis of chromium boride. ► Significant lowering of reaction temperature to obtain nanocrystalline chromium boride. ► Enhanced reactivity due to appropriate surface interactions.« less

Investigation of diffusional interaction between P91 grade ferritic steel and Fe-15 wt.%B alloy and study of kinetics of boride formation at high temperature

NASA Astrophysics Data System (ADS)

Rai, Arun Kumar; Vijayashanthi, N.; Tripathy, H.; Hajra, R. N.; Raju, S.; Murugesan, S.; Saroja, S.

2017-11-01

In the present study, the feasibility of employing the indigenously developed ferroboron alloy (Fe-15 wt.%B) as an alternate neutron shield material in combination with 9Cr-based ferritic steel (P91) clad in future Indian fast breeder reactors (FBR), has been investigated from a metallurgical perspective. Towards this goal, a series of diffusion couple experiments have been conducted at three different temperatures namely, 600, 700 and 800 °C for time durations up to 5000 h. The thickness of interaction layer has been monitored using standard metallographic procedures. The experiments revealed that ferroboron/P91 combination exhibited a tendency to form complex intermetallic borides at the interface. The structural and microstructural characterization of the interface confirmed that the reaction layer consists predominantly of borides of Fe and Cr of type FeB, Fe2B, (Fe,Cr)2B and (Fe,Cr)B. The measured variation of interaction layer thickness as a function of time and temperature have been modelled in terms of diffusion mediated interaction. The growth kinetics of borided layer has followed the parabolic law at each temperature, and the apparent activation energy for boride layer formation is found to be of the order of 115 kJ mol-1. This indicates that the kinetics of boriding could be governed by diffusion of B into the P91 matrix. Based on the findings of present study, an extrapolative estimate of the clad attack thickness at 550 °C for 60 years of operating time has been made and it turns out to be 210 ± 15 μm, which is less than the clad thickness of FBR shielding subassembly (4 mm) [1]. Thus, this study confirms that at testing temperatures from 550 to 600 °C, the ferroboron/P91 steel combination can be safely employed for shielding subassembly applications in fast reactors.

Kinetics of electrolysis current reversal boriding of tool steels in a boron-containing oxychloride melt based on CaCl2

NASA Astrophysics Data System (ADS)

Chernov, Ya. B.; Filatov, E. S.

2017-08-01

The kinetics of thermal diffusion boriding in a melt based on calcium chloride with a boron oxide additive is studied using reversed current. The main temperature, concentration, and current parameters of the process are determined. The phase composition of the coating is determined by a metallographic method.

Search for New Superconductors for Energy and Power Applications

DTIC Science & Technology

2014-10-21

superconductors, borides , carbides, silicides, and chalcogenides. In addition, a number of thin film systems have been explored: A15s, superlattices, arrays of...YBa2Cu3O7 Bi2Se3 Eu-Si-C ErRh4B4 Bi2Sr2CaCu2O8 (UD, OD) Sb2Se3 V-Si-C (Ga,Mn)As CuO ZrSe2 Sm-Si-C Hf(FeCo)P Y1-xCaxCrO3 Fe-Te-Se BORIDES Hf-Fe-C-P...Physics, Warsaw, Poland Table III New superconductors, discovered by UCSD MURI team. BORIDES Tc (K) Nb0.9Zr0.1B 11.2 ZrNbxB 9.0 ZrVxB 9.0

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

NASA Technical Reports Server (NTRS)

Tanaka, Hidehiko

1987-01-01

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Method of boronizing transition metal surfaces

DOEpatents

Koyama, Koichiro; Shimotake, Hiroshi

1983-01-01

A method is presented for preparing a boride layer on a transition metal substrate for use in corrosive environments or as a harden surface in machine applications. This method is particularly useful in treating current collectors for use within a high temperature and corrosive electrochemical cell environment. A melt of a alkali metal boride tetrafluoride salt including such as KF to lower its melting point is prepared including a dissolved boron containing material, for instance NiB, MnB.sub.2, or CrB.sub.2. A transition metal to be coated is immersed in the melt at a temperature of no more than 700.degree. C. and a surface boride layer of that transition metal is formed within a period of about 24 hours on the substrate surface.

Subminiature eddy current transducers for studying boride coatings

NASA Astrophysics Data System (ADS)

Dmitriev, S. F.; Ishkov, A. V.; Malikov, V. N.; Sagalakov, A. M.

2016-07-01

Strengthening of parts and units of machines, increased reliability and longer service life is an important task of modern mechanical engineering. The main objects of study in the work were selected steel 65G and 50HGA, wear-resistant boride coatings ternary system Fe-B-Fe n B which were investigated by scanning electron microscopy and eddy-current nondestructive methods.

Demonstration of Shear Localization in Ultrafine Grained Tungsten Alloys via Powder Metallurgy Processing Route

DTIC Science & Technology

2012-09-01

of a di-tungsten boride (W2B) phase was not detected in the nW-B sample, but the low concentration of boron may have made this phase undetectable by...Split Hopkinson Bar UFG ultrafine grained W2B di-tungsten boride XRD x-ray diffraction NO. OF NO. OF COPIES ORGANIZATION COPIES

Slater-Pauling behavior within quaternary intermetallic borides of the Ti{sub 3}Co{sub 5}B{sub 2} structure-type

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghaus, Jens; Dronskowski, Richard, E-mail: drons@HAL9000.ac.rwth-aachen.d; Miller, Gordon J.

2009-10-15

First-principles, density-functional studies of several intermetallic borides of the general type M{sub 2}M'Ru{sub 5-n}Rh{sub n}B{sub 2} (n=0-5; M=Sc, Ti, Nb; M'=Fe, Co) show that the variation in saturation magnetic moment with valence-electron count follows a Slater-Pauling curve, with a maximum moment occurring typically at 66 valence electrons. The magnetic moments in these compounds occur primarily from the 3d electrons of the magnetically active M' sites, with some contribution from the Ru/Rh sites via magnetic polarization. Electronic DOS curves reveal that a rigid-band approach is a reasonable approximation for the estimation of saturation moments and the analysis of orbital interactions inmore » this family of complex borides. COHP analyses of the M'-M' orbital interactions indicate optimized interactions in the minority spin states for Co-containing phases, but strong bonding interactions remaining in Fe-containing phases. - Graphical abstract: Theoretically determined (spin-polarized LMTO-GGA) local magnetic moments as a function of the chemical valence Z for various intermetallic borides.« less

Superplastic behavior of two ultrahigh boron steels

NASA Astrophysics Data System (ADS)

Jiménez, J. A.; González-Doncel, G.; Acosta, P.; Ruano, O. A.

1994-06-01

The high-temperature deformation behavior of two ultrahigh boron steels containing 2.2 pct and 4.9 pct B was investigated. Both alloys were processed via powder metallurgy involving gas atomization and hot isostatic pressing (hipping) at various temperatures. After hipping at 700 °C, the Fe-2.2 pct B alloy showed a fine microstructure consisting of l- µm grains and small elongated borides (less than 1 µm) . At 1100 °C, a coarser microstructure with rounded borides was formed. This alloy was superplastic at 850 °C with stress exponents of about two and tensile elongations as high as 435 pct. The microstructure of the Fe-4.9 pct B alloy was similar to that of the Fe-2.2 pct B alloy showing, in addition, coarse borides. This alloy also showed low stress exponent values but lacked high tensile elongation (less than 65 pct), which was attributed to the presence of stress accumulation at the interface between the matrix and the large borides. A change in the activation energy value at the α-γ transformation temperature was seen in the Fe-2.2 pct B alloy. The plastic flow data were in agreement with grain boundary sliding and slip creep models.

Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

Low temperature InP /Si wafer bonding using boride treated surface

NASA Astrophysics Data System (ADS)

Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

2007-04-01

An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

Method of boronizing transition metal surfaces

DOEpatents

Koyama, Koichiro; Shimotake, Hiroshi.

1983-08-16

A method is presented for preparing a boride layer on a transition metal substrate for use in corrosive environments or as a harden surface in machine applications. This method is particularly useful in treating current collectors for use within a high temperature and corrosive electrochemical cell environment. A melt of a alkali metal boride tetrafluoride salt including such as KF to lower its melting point is prepared including a dissolved boron containing material, for instance NiB, MnB[sub 2], or CrB[sub 2]. A transition metal to be coated is immersed in the melt at a temperature of no more than 700 C and a surface boride layer of that transition metal is formed within a period of about 24 hours on the substrate surface. 4 figs.

Taguchi Analysis on the Effect of Process Parameters on Densification During Spark Plasma Sintering of HfB2-20SiC (Preprint)

DTIC Science & Technology

2011-11-01

30 kN pressure and heating rate of 100 K/min. Introduction Boride , carbides and nitrides of the group IVB and VB transition metals are considered...10. Sciti D., Silvestroni L., Nygren M. Spark plasma sintering of Zr- and Hf- borides with decreasing amounts of MoSi2 as sintering aid Journal of

Phase identification in boron-containing powder metallurgy steel using EBSD in combination with EPMA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ming-Wei, E-mail: mwwu@ntut.edu.tw; Cai, Wen-Zhang

2016-03-15

Boron (B) is extensively used to induce liquid phase sintering (LPS) in powder metallurgy (PM) steels and thereby increase the densification. The alloying elements in B-containing PM steels affect the boride phase, stability of the boride, the temperature of liquid formation, and the progress of LPS. However, the boride phase has not been systematically identified yet. The main objective of this study was to clarify the influences of alloying elements, including C, Cr, and Ni, on the boride phases using electron backscatter diffraction (EBSD) in combination with electron probe microanalysis (EPMA). Network structures consisting of ferrite, Fe{sub 2}B boride, andmore » Fe{sub 3}C carbide were extensively observed in the Fe–0.4B–0.5C steel. The portions of Fe{sub 2}B were sufficiently larger than those of Fe{sub 3}C, and Fe{sub 3}C was mostly distributed at the interfaces between ferrite and Fe{sub 2}B. Adding 1.5 wt.% Cr or 1.8 wt.% Ni to Fe–0.4B–0.5C steel completely changes the Fe{sub 2}B and Fe{sub 3}C phases to a M{sub 3}(B,C) phase, where M represents the metallic elements, including Fe, Cr, Mo, and Ni. Furthermore, Cr, Mo, B, and C atoms tend to concentrate on the M{sub 3}(B,C) phase, but Ni atoms do not. - Highlights: • Network structures consisting of ferrite, Fe{sub 2}B boride, and Fe{sub 3}C carbide were extensively observed in the Fe–0.4B–0.5C steel. • Adding 1.5 wt.% Cr or 1.8 wt.% Ni to Fe–0.4B–0.5C steel completely transforms the Fe{sub 2}B and Fe{sub 3}C phases to a M{sub 3}(B,C) phase. • Cr, Mo, B, and C atoms tend to concentrate on the M{sub 3}(B,C) phase, but Ni atoms do not.« less

Multifunctional Ceramic Nanostructured Coatings

DTIC Science & Technology

2010-12-01

silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on

Structure of superhard tungsten tetraboride: A missing link between MB2 and MB12 higher borides

PubMed Central

Lech, Andrew T.; Turner, Christopher L.; Mohammadi, Reza; Tolbert, Sarah H.; Kaner, Richard B.

2015-01-01

Superhard metals are of interest as possible replacements with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-resistant tooling. Of the superhard metals, the highest boride of tungsten—often referred to as WB4 and sometimes as W1–xB3—is one of the most promising candidates. The structure of this boride, however, has never been fully resolved, despite the fact that it was discovered in 1961—a fact that severely limits our understanding of its structure–property relationships and has generated increasing controversy in the literature. Here, we present a new crystallographic model of this compound based on refinement against time-of-flight neutron diffraction data. Contrary to previous X-ray–only structural refinements, there is strong evidence for the presence of interstitial arrangements of boron atoms and polyhedral bonding. The formation of these polyhedra—slightly distorted boron cuboctahedra—appears to be dependent upon the defective nature of the tungsten-deficient metal sublattice. This previously unidentified structure type has an intermediary relationship between MB2 and MB12 type boride polymorphs. Manipulation of the fractionally occupied metal and boron sites may provide insight for the rational design of new superhard metals. PMID:25733870

Analysis of boron carbides' electronic structure

NASA Technical Reports Server (NTRS)

Howard, Iris A.; Beckel, Charles L.

1986-01-01

The electronic properties of boron-rich icosahedral clusters were studied as a means of understanding the electronic structure of the icosahedral borides such as boron carbide. A lower bound was estimated on bipolaron formation energies in B12 and B11C icosahedra, and the associated distortions. While the magnitude of the distortion associated with bipolaron formation is similar in both cases, the calculated formation energies differ greatly, formation being much more favorable on B11C icosahedra. The stable positions of a divalent atom relative to an icosahedral borane was also investigated, with the result that a stable energy minimum was found when the atom is at the center of the borane, internal to the B12 cage. If incorporation of dopant atoms into B12 cages in icosahedral boride solids is feasible, novel materials might result. In addition, the normal modes of a B12H12 cluster, of the C2B10 cage in para-carborane, and of a B12 icosahedron of reduced (D sub 3d) symmetry, such as is found in the icosahedral borides, were calculated. The nature of these vibrational modes will be important in determining, for instance, the character of the electron-lattice coupling in the borides, and in analyzing the lattice contribution to the thermal conductivity.

Electrochemical Corrosion Behavior of Spray-Formed Boron-Modified Supermartensitic Stainless Steel

NASA Astrophysics Data System (ADS)

Zepon, Guilherme; Nogueira, Ricardo P.; Kiminami, Claudio S.; Botta, Walter J.; Bolfarini, Claudemiro

2017-04-01

Spray-formed boron-modified supermartensitic stainless steel (SMSS) grades are alloys developed to withstand severe wear conditions. The addition of boron to the conventional chemical composition of SMSS, combined with the solidification features promoted by the spray forming process, leads to a microstructure composed of low carbon martensitic matrix reinforced by an eutectic network of M2B-type borides, which considerably increases the wear resistance of the stainless steel. Although the presence of borides in the microstructure has a very beneficial effect on the wear properties of the alloy, their effect on the corrosion resistance of the stainless steel was not comprehensively evaluated. The present work presents a study of the effect of boron addition on the corrosion resistance of the spray-formed boron-modified SMSS grades by means of electrochemical techniques. The borides fraction seems to have some influence on the repassivation kinetics of the spray-formed boron-modified SMSS. It was shown that the Cr content of the martensitic matrix is the microstructural feature deciding the corrosion resistance of this sort of alloys. Therefore, if the Cr content in the alloy is increased to around 14 wt pct to compensate for the boron consumed by the borides formation, the corrosion resistance of the alloy is kept at the same level of the alloy without boron addition.

A Crossover from High Stiffness to High Hardness: The Case of Osmium and Its Borides

NASA Astrophysics Data System (ADS)

Bian, Yongming; Liu, Xiaomei; Li, Anhu; Liang, Yongcheng

2016-09-01

Transition-metal light-element compounds are currently raising great expectations for hard and superhard materials. Using the widely attracting osmium (Os) and its borides (OsB, Os2B3 and OsB2) as prototypes, we demonstrate by first-principles calculations that heavy transition metals, which possess high stiffness but low hardness, can be converted into highly hard materials by incorporating of light elements to form compounds. Such a crossover is a manifestation that the underlying sources of high stiffness and high hardness are fundamentally different. The stiffness is related to elastic deformation that is closely associated with valence electron density, whereas the hardness depends strongly on plastic deformation that is determined by bonding nature. Therefore, the incorporation of light atoms into transition metal should be a valid pathway of designing hard and superhard materials. This strategy is in principle also applicable to other transition-metal borides, carbides, and nitrides.

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivezhenko, Dina S., E-mail: dinylkaa@yandex.ru; Drobyaz, Ekaterina A., E-mail: ekaterina.drobyaz@yandex.ru; Bataev, Ivan A., E-mail: ivanbataev@ngs.ru

2015-10-27

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to anmore » enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.« less

Thermodynamical and thermoelectric properties of boron doped YPd{sub 3} and YRh{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, Shalini; Sharma, Yamini, E-mail: sharma.yamini62@gmail.com; Sharma, Ramesh

2016-05-23

The structural, electronic, thermal, and optical properties of borides of cubic non-magnetic YX{sub 3} (X=Rh, Pd) compounds and their borides which crystallize in the AuCu{sub 3} structure have been studied using the density functional theory (DFT). The flat bands in the vicinity of E{sub F} which are associated with superconductivity appear in YPd{sub 3} and YRh{sub 3} band structures. However, the B s-states enhance the flat band only in YRh{sub 3}B. The optical properties clearly show that boron insertion modifies the absorption and transmittance. The YX{sub 3} alloys and their borides exhibit valuable changes in the thermopower and ZT. Itmore » is observed that the properties of the Y-X intermetallics change significantly for the Y-Rh and Y-Pd alloys and the presence of single boron atom modifies the properties to a great extent.« less

Magnetization Analysis of Magnesium Boride Wires

NASA Astrophysics Data System (ADS)

Cave, J. R.; Zhu, W.

2006-03-01

Cycled applied field magnetization curves contain a wealth of information on critical current density and flux pinning that is not commonly exploited. Detailed magnetization data for magnesium boride wire cores have been analyzed for critical state model consistency. The iron-sheathed silicon nitride doped magnesium boride wires were prepared from pure magnesium and boron powders with nano-scale silicon nitride additions (MgB2-x(Si3N4)x/7 with x = 0 - 0.4). A subsequent short annealing heat treatment, 800 degrees C and of 1 hour duration in Argon, was applied to create the desired phase. Magnetization critical current densities were up to ˜340 kA/cm2 at 5K and 1T. Major and minor loop analysis will be described, for field sweeps up to 3 tesla at fixed temperatures and for temperature sweeps from 5K to 45K in fixed fields, with respect to parameters describing the critical state model.

Investigation of the structure and properties of boron-containing coatings obtained by electron-beam treatment

NASA Astrophysics Data System (ADS)

Krivezhenko, Dina S.; Drobyaz, Ekaterina A.; Bataev, Ivan A.; Chuchkova, Lyubov V.

2015-10-01

An investigation of surface-hardened materials obtained by cladding with an electron beam injected into the air atmosphere was carried out. Structural investigations of coatings revealed that an increase in boron carbide concentration in a saturating mixture contributed to a rise of a volume fraction of iron borides in coatings. The maximum hardened depth reached 2 mm. Hardened layers were characterized by the formation of heterogeneous structure which consisted of iron borides and titanium carbides distributed uniformly in the eutectic matrix. Areas of titanium boride conglomerations were detected. It was found that an increase in the boron carbide content led to an enhancement in hardness of the investigated materials. Friction testing against loosely fixed abrasive particles showed that electron-beam cladding of powder mixtures containing boron carbides, titanium, and iron in air atmosphere allowed enhancing a resistance of materials hardened in two times.

Germanium recycling in the United States in 2000

USGS Publications Warehouse

Jorgenson, John D.

2006-01-01

This report describes the recycling flow of germanium in the United States in 2000, as well as other germanium material flow streams. Germanium was recycled mostly from new scrap that was generated during the manufacture of germanium-containing fiber optic cables and from new and old scrap products of germanium-containing infrared imaging devices. In 2000, about 11.5 metric tons of germanium was recycled, about 40 percent of which was derived from old scrap. The germanium recycling rate was estimated to be 50 percent, and germanium scrap recycling efficiency, 76 percent.

Crystal structures and compressibility of novel iron borides Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} synthesized at high pressure and high temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykova, E., E-mail: elena.bykova@uni-bayreuth.de; Laboratory of Crystallography, University of Bayreuth, D-95440 Bayreuth; Gou, H.

2015-10-15

We present here a detailed description of the crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} with various iron content (x=1.01(1), 1.04(1), 1.32(1)), synthesized at high pressures and high temperatures. As revealed by high-pressure single-crystal X-ray diffraction, the structure of Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds, which make it as stiff as diamond in one crystallographic direction. The volume compressibility of Fe{sub 2}B{sub 7} (the bulk modulus K{sub 0}= 259(1.8) GPa, K{sub 0}′= 4 (fixed)) is even lower than that of FeB{sub 4} and comparable with that of MnB{sub 4}, known for highmore » bulk moduli among 3d metal borides. Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B, in which Fe atoms occupy an interstitial position. Fe{sub x}B{sub 50} does not show considerable anisotropy in the elastic behavior. - Graphical abstract: Crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} (x=1.01(1), 1.04(1), 1.32(1)). - Highlights: • Novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50}, were synthesized under HPHT conditions. • Fe{sub 2}B{sub 7} has a unique orthorhombic structure (space group Pbam). • Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds that results in high bulk modulus. • Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B composed of B{sub 12} icosahedra. • In Fe{sub x}B{sub 50} intraicosahedral bonds are stiffer than intericosahedral ones.« less

The effect of melt refining upon inclusions in aluminum

NASA Astrophysics Data System (ADS)

Simensen, C. J.

1982-03-01

A series of aluminum melts has been refined with respect to inclusions by use of ALCOA 469, FILD, or SNIF. The content and size distribution of inclusions in the original-and the refined melts-have been measured by use of neutron activation (oxygen content), gas chromatography (carbide content), sedimentation analysis, and dissolution of metal in hydrochloric acid and subsequent analysis of oxides by means of a Coulter Counter. All the units tested have a beneficial effect and decrease the inclusion content, but the number of analyses are too few to make general conclusions. However, for melts cleaned by use of SNIF, it was found that oxides larger than 50 μm in cross section and borides larger than 20 μm in diameter were removed, while the smaller borides were agglomerated only. The effect of FILD and ALCOA 469 upon the melt tested was removal of borides larger than 5-10 μ m and oxides larger than 15μm in diameter, respectively.

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

NASA Technical Reports Server (NTRS)

Rao, V. B.; Houska, C. R.; Unnam, J.; Brewer, W. D.; Tenney, D. R.

1979-01-01

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

NASA Astrophysics Data System (ADS)

Flores-Rentería, M. A.; Ortiz-Domínguez, M.; Keddam, M.; Damián-Mejía, O.; Elias-Espinosa, M.; Flores-González, M. A.; Medina-Moreno, S. A.; Cruz-Avilés, A.; Villanueva-Ibañez, M.

2015-02-01

This work focused on the determination of boron diffusion coefficient through the Fe2B layers on AISI 1026 steel using a mathematical model. The suggested model solves the mass balance equation at the (Fe2B/substrate) interface. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for a treatment time ranging from 2 to 8 h. The generated boride layers were characterized by different experimental techniques such as light optical microscopy, scanning electron microscopy, XRD analysis and the Daimler-Benz Rockwell-C indentation technique. As a result, the boron activation energy for AISI 1026 steel was estimated as 178.4 kJ/mol. Furthermore, this kinetic model was validated by comparing the experimental Fe2B layer thickness with the predicted one at a temperature of 1253 K for 5 h of treatment. A contour diagram relating the layer thickness to the boriding parameters was proposed to be used in practical applications.

Amorphous nickel boride membrane on a platinum-nickel alloy surface for enhanced oxygen reduction reaction.

PubMed

He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

2016-08-09

The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum-nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum-nickel catalyst, and this composite catalyst composed of crystalline platinum-nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon.

Influence of heat treatment on microstructure and hot crack susceptibility of laser-drilled turbine blades made from Rene 80

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osterle, W.; Krause, S.; Moelders, T.

2008-11-15

Turbine components from conventionally cast nickel-base alloy Rene 80 show different hot cracking susceptibilities depending on their heat treatment conditions leading to slightly different microstructures. Electron probe micro-analysis, focused ion beam technique and analytical transmission electron microscopy were applied to reveal and identify grain boundary precipitates and the {gamma}-{gamma}'-microstructure. The distribution of borides along grain boundaries was evaluated statistically by quantitative metallography. The following features could be correlated with an increase of cracking susceptibility: i) Increasing grain size, ii) increasing fraction of grain boundaries with densely spaced borides, iii) lack of secondary {gamma}'-particles in matrix channels between the coarse cuboidalmore » {gamma}'-precipitates. The latter feature seems to be responsible for linking-up of cracked grain boundary precipitates which occurred as an additional cracking mechanism after one heat treatment, whereas decohesion at the boride-matrix-interface in the heat affected zone of laser-drilled holes was observed for both heat treatments.« less

Method of making an icosahedral boride structure

DOEpatents

Hersee, Stephen D.; Wang, Ronghua; Zubia, David; Aselage, Terrance L.; Emin, David

2005-01-11

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

Microstructure and mechanical properties of Ni and Fe-base boride-dispersion-strengthened microcrystalline alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wade, C.S.; Park, H.G.; Hoagland, R.G.

This paper considers the relation between microstructure and mechanical properties of two Ni-base and two Fe-base Boride-Dispersion-Strengthened Microcrystalline (BDSM) alloys. In these very fine grained materials the borides were primarily Cr, Mo, and MoFe in a fcc matrix in three of the alloys, and a bcc in one of the Fe-base alloys. Strength data and resistance to stress corrosion cracking are reported and, in the latter case, extraordinary resistance to SCC in NaCl, Na{sub 2}S{sub 2}O{sub 3} and boiling MgCl{sub 2} environments was observed in every case. The fcc BDSM alloys also demonstrated excellent thermal stability in terms of strengthmore » and fracture roughness up to 1000 C. The bcc alloy suffered severe loss of toughness. The fracture mode involved ductile rupture in all alloys and they display a reasonably linear correlation between K{sub Ic} and the square root of particle spacing.« less

Magnetic properties and magnetic hardening mechansim of Pt-Co-B alloys

NASA Technical Reports Server (NTRS)

Qiu, Ning; Flanagan, F.; Wittig, James E.

1994-01-01

The intrinsic coercivity is found to be maximized in the Pt42Co45B13 ternary alloy which is undercooled and rapidly solidified (quenched using a 70 m/s wheel speed after undercooling), and then annealed (800 C for 2400 min). The same alloy, processed at slower cooling rates and annealed in the same way, has a much larger scale microstructure and a much lower resulting magnetic coercivity. The microstructure which would optimize the coercitvity of this coercivity of this ternary alloy is a completely ordered L1(sub zero) Pt-Co matrix with a submicron magnetic single-domion Co-boride precipitate. The L1(sub zero) phase is highly anistropic magnetically while the Co-boride precipate is somewhat less so. Annealing treatments designed to produced single-domain Co-boride precipitates enhance the coercivity. This suggests that the refined microstructures is responsible for the high coercivities found in the rapidly solidified and annealed alloy. The magnetic domain wall thickness for a Co-boride precipitate is determined from both experimental observation and theoretical calculation in order to evaluate its influence on the coercivity of the alloy. The effects of the pinning of domain walls and the barrier to the nucleation of reverse domains on the coercivity are discussed. Both microstrucutral analysis and theoretical calculation indicate that the high coercivities in the Pt42Co45B13 alloy are due to the difficult nucleation of reverse magnetic domains.

The Germanium Dichotomy in Martian Meteorites

NASA Technical Reports Server (NTRS)

Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

2016-01-01

Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

Electroplating of the superconductive boride MgB2 from molten salts

NASA Astrophysics Data System (ADS)

Abe, Hideki; Yoshii, Kenji; Nishida, Kenji; Imai, Motoharu; Kitazawa, Hideaki

2005-02-01

An electroplating technique of the superconductive boride MgB2 onto graphite substrates is reported. Films of MgB2 with a thickness of tens micrometer were fabricated on the planar and curved surfaces of graphite substrates by means of electrolysis on a mixture of magnesium chloride, potassium chloride, sodium chloride, and magnesium borate fused at 600 °C under an Ar atmosphere. The electrical resistivity and magnetization measurements revealed that the electroplated MgB2 films undergo a superconducting transition with the critical temperature (Tc) of 36 K.

Fine structure of the K X-ray absorption spectra of titanium in some hydrides, borides, and silicides (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vainshtein, �. E.; Zhurakovskii, E. A.

1959-08-01

X-ray spectral analyses confirmed the hypothesis on the metal-like state of hydrogen in tithnium hydrides. Experiments with titunium borides and silicides indicate the special character and degree of the 3d--level participation in the metallic'' bond between the atoms of various complexes. The structure of metalloid elements becomes more complicated with an increase in the specific number of boron and silicon atoms and the bond between the atoms tends to become covalent. (R.V.J.)

History of ``NANO''-Scale VERY EARLY Solid-State (and Liquid-State) Physics/Chemistry/Metallurgy/ Ceramics; Interstitial-Alloys Carbides/Nitrides/Borides/...Powders and Cermets, Rock Shocks, ...

NASA Astrophysics Data System (ADS)

Maiden, Colin; Siegel, Edward

History of ``NANO'': Siegel-Matsubara-Vest-Gregson[Mtls. Sci. and Eng. 8, 6, 323(`71); Physica Status Solidi (a)11,45(`72)] VERY EARLY carbides/nitrides/borides powders/cermets solid-state physics/chemistry/metallurgy/ ceramics FIRST-EVER EXPERIMENTAL NANO-physics/chemistry[1968 ->Physica Status Solidi (a)11,45(`72); and EARLY NANO-``physics''/NANO-``chemistry'' THEORY(after: Kubo(`62)-Matsubara(`60s-`70s)-Fulde (`65) [ref.: Sugano[Microcluster-Physics, Springer('82 `98)

Synthesis and Characterization of Low-Cost Superhard Transition-Metal Borides

NASA Astrophysics Data System (ADS)

Kaner, Richard

2013-06-01

The increasing demand for high-performance cutting and forming tools, along with the shortcomings of traditional tool materials such as diamond (unable to cut ferrous materials), cubic boron nitride (expensive) and tungsten carbide (relatively-low hardness), has motivated the search for new superhard materials for these applications. This has led us to a new class of superhard materials, dense refractory transition-metal borides, which promise to address some of the existing problems of conventional superhard materials. For example, we have synthesized rhenium diboride (ReB2) using arc melting at ambient pressure. This superhard material has demonstrated an excellent electrical conductivity and superior mechanical properties, including a Vickers hardness of 48.0 GPa (under an applied load of 0.49 N). To further increase the hardness and lower the materials costs, we have begun exploring high boron content metal borides including tungsten tetraboride (WB4) . We have synthesized WB4 by arc melting and studied its hardness and high-pressure behavior. With a similar Vickers hardness (43.3 GPa under a load of 0.49 N) and bulk modulus (326-339 GPa) to ReB2, WB4 offers a lower cost alternative and has the potential to be used in cutting tools. To further enhance the hardness of this superhard metal, we have created the binary and ternary solid solutions of WB4 with Cr, Mn and Ta, the results of which show a hardness increase of up to 20 percent. As with other metals, these metallic borides can be readily cut and shaped using electric discharge machining (EDM).

Microstructure of Vacuum-Brazed Joints of Super-Ni/NiCr Laminated Composite Using Nickel-Based Amorphous Filler Metal

NASA Astrophysics Data System (ADS)

Ma, Qunshuang; Li, Yajiang; Wu, Na; Wang, Juan

2013-06-01

Vacuum brazing of super-Ni/NiCr laminated composite and Cr18-Ni8 stainless steel was carried out using Ni-Cr-Si-B amorphous filler metal at 1060, 1080, and 1100 °C, respectively. Microstructure and phase constitution were investigated by means of optical and scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and micro-hardness tester. When brazed at 1060-1080 °C, the brazed region can be divided into two distinct zones: isothermally solidified zone (ISZ) consisting of γ-Ni solid solution and athermally solidified zone (ASZ) consisting of Cr-rich borides. Micro-hardness of the Cr-rich borides formed in the ASZ was as high as 809 HV50 g. ASZ decreased with increase of the brazing temperature. Isothermal solidification occurred sufficiently at 1100 °C and an excellent joint composed of γ-Ni solid solution formed. The segregation of boron from ISZ to residual liquid phase is the reason of Cr-rich borides formed in ASZ. The formation of secondary precipitates in diffusion-affected zone is mainly controlled by diffusion of B.

Microstructure and High Temperature Mechanical Property of Fe-Cr-B Based Metal/Ceramic Composite Manufactured by Metal Injection Molding Process

NASA Astrophysics Data System (ADS)

Lee, Kee-Ahn; Gwon, Jin-Han; Yoon, Tae-Sik

2018-03-01

This study investigated the microstructure and the room and high temperature mechanical properties of Fe-Cr-B alloy manufactured by metal injection molding. In addition, hot isostatic pressing was performed to increase the density of the material, and a comparison of properties was made. Microstructural observation confirmed a bi-continuous structure composed of a three-dimensional network of α-Fe phase and (Cr,Fe)2B phase. The HIPed specimen featured a well-formed adhesion between the α-Fe phase and boride, and the number of fine pores was significantly reduced. The tensile results confirmed that the HIPed specimen (RT to 900 °C) had higher strengths compared to the as-sintered specimen, and the change of elongation starting from 700 °C was significantly greater in the HIPed specimen. Fractography suggested that cracks propagated mostly along the interface between the α-Fe matrix and boride in the as-sintered specimen, while direct fracture of boride was observed in addition to interface separation in the HIPed specimen.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, C.E.; Scott, D.G.

1984-06-25

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal 10 borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, Cressie E.; Scott, Donald G.

1985-01-01

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Phase equilibrium in system Ti-Si-C-B and synthesis of MAX phase layers in vacuum under the influence of electron beam

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Dasheev, D. E.; Lapina, A. E.

2017-05-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VТ-1 are generated at diffused saturation by electron beam treatment in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Brazing Inconel 625 Using Two Ni/(Fe)-Based Amorphous Filler Foils

NASA Astrophysics Data System (ADS)

Chen, Wen-Shiang; Shiue, Ren-Kae

2012-07-01

For MBF-51 filler, the brazed joint consists of interfacial grain boundary borides, coarse Nb6Ni16Si7, and Ni/Cr-rich matrix. In contrast, the VZ-2106 brazed joint is composed of interfacial Nb6Ni16Si7 precipitates as well as grain boundary borides, coarse Nb6Ni16Si7, and Ni/Cr/Fe-rich matrix. The maximum tensile strength of 443 MPa is obtained from the MBF-51 brazed specimen. The tensile strengths of VZ-2106 brazed joints are approximately 300 MPa. Both amorphous filler foils demonstrate potential in brazing IN-625 substrate.

Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Spalvins, T.

1977-01-01

Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

High Precision Metal Thin Film Liftoff Technique

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

2015-01-01

A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

Synthesis, Structure, and Properties of Refractory Hard-Metal Borides

NASA Astrophysics Data System (ADS)

Lech, Andrew Thomas

As the limits of what can be achieved with conventional hard compounds, such as tungsten carbide, are nearing reach, super-hard materials are an area of increasing industrial interest. The refractory hard metal borides, such as ReB2 and WB4, offer an increasingly attractive alternative to diamond and cubic boron nitride as a next-generation tool material. In this Thesis, a thorough discussion is made of the progress achieved by our laboratory towards understanding the synthesis, structure, and properties of these extremely hard compounds. Particular emphasis is placed on structural manipulation, solid solution formation, and the unique crystallographic manifestations of what might also be called "super-hard metals".

Mineral resource of the month: germanium

USGS Publications Warehouse

Guberman, David

2010-01-01

The article provides information on germanium, an element with electrical properties between those of a metal and an insulator. Applications of germanium include its use as a component of the glass in fiber-optic cable, in infrared optics devices and as a semiconductor and substrate used in electronic and solar applications. Germanium was first isolated by German chemist Clemens Winkler in 1886 and was named after Winkler's native country. In 2008, the leading sources of primary germanium from coal or zinc include Canada, China and Russia.

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2011 CFR

2011-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2014 CFR

2014-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2012 CFR

2012-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2013 CFR

2013-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

Germanium: From Its Discovery to SiGe Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.

2006-06-14

Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premiermore » gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.« less

Tunable conductivity in mesoporous germanium

NASA Astrophysics Data System (ADS)

Beattie, Meghan N.; Bioud, Youcef A.; Hobson, David G.; Boucherif, Abderraouf; Valdivia, Christopher E.; Drouin, Dominique; Arès, Richard; Hinzer, Karin

2018-05-01

Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10‑3) Ω‑1 cm‑1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10‑3 Ω‑1 cm‑1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

Hydrothermal synthesis of bismuth germanium oxide

DOEpatents

Boyle, Timothy J.

2016-12-13

A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

Structural, electronic and thermal properties of super hard ternary boride, WAlB

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-04-01

A first principle study of the structural, electronic and thermal properties of Tungsten Aluminum Boride (WAlB) using full-potential linearized augmented plane wave (FP-LAPW) in the frame work of density function theory (DFT) have been calculated. The calculated equilibrium structural parameters are in excellent agreement with available experimental results. The calculated electronic band structure reveals that WAlB is metallic in nature. The quasi-harmonic Debye model is applied to study of the temperature and pressure effect on volume, Debye temperature, thermal expansion coefficient and specific heat at constant volume and constant pressure. To the best of our knowledge theoretical investigation of these properties of WAlB is reported for the first time.

Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

DOEpatents

Halverson, Danny C.; Landingham, Richard L.

1988-01-01

A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

Mineral commodity profiles: Germanium

USGS Publications Warehouse

Butterman, W.C.; Jorgenson, John D.

2005-01-01

Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

The Quantitative Significance of Nondestructive Evaluation of Graphite and Ceramic Materials.

DTIC Science & Technology

NONDESTRUCTIVE TESTING), (* GRAPHITE , (*BORIDES, NONDESTRUCTIVE TESTING), (*REFRACTORY MATERIALS, NONDESTRUCTIVE TESTING), DEFECTS(MATERIALS), TENSILE PROPERTIES, RADIOGRAPHY, ULTRASONIC PROPERTIES, DENSITY.

High-Temperature Syntheses of New, Thermally-Stable Chemical Compounds.

DTIC Science & Technology

SYNTHESIS(CHEMISTRY), HEAT RESISTANT PLASTICS, NITRILES, FLUORINE COMPOUNDS, COMPLEX COMPOUNDS, NITROGEN, SULFIDES, ORGANOMETALLIC COMPOUNDS, ORGANOBORANES, BORIDES, SPINEL, CARBIDES, NITRIDES, SILICIDES .

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

PubMed

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

MAJORANA Collaboration's experience with germanium detectors

DOE PAGES

Mertens, S.; Abgrall, N.; Avignone, F. T.; ...

2015-05-01

The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANAmore » mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.« less

B Layers and Adhesion on Armco Iron Substrate

NASA Astrophysics Data System (ADS)

Elias-Espinosa, M.; Ortiz-Domínguez, M.; Keddam, M.; Flores-Rentería, M. A.; Damián-Mejía, O.; Zuno-Silva, J.; Hernández-Ávila, J.; Cardoso-Legorreta, E.; Arenas-Flores, A.

2014-08-01

In this work, a kinetic model was suggested to evaluate the boron diffusion coefficient in the Fe2B layers grown on the Armco iron substrate by the powder-pack boriding. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for treatment times ranging from 2 to 8 h. The boron diffusion coefficient in the Fe2B layers was estimated by solving the mass balance equation at the (Fe2B/substrate) interface with an inclusion of boride incubation time. To validate the present model, the simulated value of Fe2B layer thickness was compared with the experimental value obtained at 1253 K for a treatment time of 5 h. The morphology of Fe2B layers was observed by SEM and optical microscopy. Metallographic studies showed that the boride layer has a saw-tooth morphology in all the samples. The layer thickness measurements were done with the help of MSQ PLUS software. The Fe2B phase was identified by x-ray diffraction method. Finally, the adherence of Fe2B layers on the Armco iron substrate was qualitatively evaluated by using the Daimler-Benz Rockwell-C indentation technique. In addition, the estimated value of boron activation energy was compared to the literature data.

A Simple, General Synthetic Route toward Nanoscale Transition Metal Borides.

PubMed

Jothi, Palani R; Yubuta, Kunio; Fokwa, Boniface P T

2018-04-01

Most nanomaterials, such as transition metal carbides, phosphides, nitrides, chalcogenides, etc., have been extensively studied for their various properties in recent years. The similarly attractive transition metal borides, on the contrary, have seen little interest from the materials science community, mainly because nanomaterials are notoriously difficult to synthesize. Herein, a simple, general synthetic method toward crystalline transition metal boride nanomaterials is proposed. This new method takes advantage of the redox chemistry of Sn/SnCl 2 , the volatility and recrystallization of SnCl 2 at the synthesis conditions, as well as the immiscibility of tin with boron, to produce crystalline phases of 3d, 4d, and 5d transition metal nanoborides with different morphologies (nanorods, nanosheets, nanoprisms, nanoplates, nanoparticles, etc.). Importantly, this method allows flexibility in the choice of the transition metal, as well as the ability to target several compositions within the same binary phase diagram (e.g., Mo 2 B, α-MoB, MoB 2 , Mo 2 B 4 ). The simplicity and wide applicability of the method should enable the fulfillment of the great potential of this understudied class of materials, which show a variety of excellent chemical, electrochemical, and physical properties at the microscale. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Corrosion and wear behaviors of boronized AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Kayali, Yusuf; Büyüksaǧiş, Aysel; Yalçin, Yılmaz

2013-09-01

In this study, the effects of a boronizing treatment on the corrosion and wear behaviors of AISI 316L austenitic stainless steel (AISI 316L) were examined. The corrosion behavior of the boronized samples was studied via electrochemical methods in a simulation body fluid (SBF) and the wear behavior was examined using the ball-on-disk wear method. It was observed that the boride layer that formed on the AISI 316L surface had a flat and smooth morphology. Furthermore, X-ray diffraction analyses show that the boride layer contained FeB, Fe2B, CrB, Cr2B, NiB, and Ni2B phases. Boride layer thickness increased with an increasing boronizing temperature and time. The boronizing treatment also increased the surface hardness of the AISI 316L. Although there was no positive effect of the coating on the corrosion resistance in the SBF medium. Furthermore, a decrease in the friction coefficient was recorded for the boronized AISI 316L. As the boronizing temperature increased, the wear rate decreased in both dry and wet mediums. As a result, the boronizing treatment contributed positively to the wear resistance by increasing the surface hardness and by decreasing the friction coefficient of the AISI 316L.

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

Design of cemented tungsten carbide and boride-containing shields for a fusion power plant

NASA Astrophysics Data System (ADS)

Windsor, C. G.; Marshall, J. M.; Morgan, J. G.; Fair, J.; Smith, G. D. W.; Rajczyk-Wryk, A.; Tarragó, J. M.

2018-07-01

Results are reported on cemented tungsten carbide (cWC) and boride-containing composite materials for the task of shielding the centre column of a superconducting tokamak power plant. The shield is based on five concentric annular shells consisting of cWC and water layers of which the innermost cWC shield can be replaced with boride composites. Sample materials have been fabricated changing the parameters of porosity P, binder alloy fraction f binder and boron weight fraction f boron. For the fabricated materials, and other hypothetical samples with chosen parameters, Monte Carlo studies are made of: (i) the power deposition into the superconducting core, (ii) the fast neutron and gamma fluxes and (iii) the attenuation coefficients through the shield for the deposited power and neutron and gamma fluxes. It is shown that conventional Co-based cWC binder alloy can be replaced with a Fe–Cr alloy (92 wt.% Fe, 8 wt.% Cr), which has lower activation than cobalt with minor changes in shield performance. Boride-based composite materials have been prepared and shown to give a significant reduction in power deposition and flux, when placed close to the superconducting core. A typical shield of cemented tungsten carbide with 10 wt.% of Fe–8Cr binder and 0.1% porosity has a power reduction half-length of 0.06 m. It is shown that the power deposition increases by 4.3% for every 1% additional porosity, and 1.7% for every 1 wt.% additional binder. Power deposition decreased by 26% for an initial 1 wt.% boron addition, but further increases in f boron showed only a marginal decrease. The dependences of power deposited in the core, the maximum neutron and gamma fluxes on the core surface, and the half attenuation distances through the shield have been fitted to within a fractional percentage error by analytic functions of the porosity, metallic binder alloy and boron weight fractions.

Etude des mecanismes de formation des microstructures lors du brasage isotherme de superalliages a base de nickel

NASA Astrophysics Data System (ADS)

Ruiz-Vargas, Jose

This thesis reports theoretical and experimental investigations carried out to understand the mechanisms of microstructure formation during isothermal brazing, produced by brazing Inconel 625 and MC2 nickel-based superalloys with filler metal BNi-2. Firstly, studies were made on pure Ni to interpret microstructure's formation with simplified alloy chemistry. Microstructure formation have been studied when varying time at constant temperature (isothermal kinetics), but also when varying temperature for constant hold time (isochronal kinetics). The chemical composition and crystallography of the present phases have been identified, with the following results : (i) the fraction of dissolved base metal has been found proportional to the initial thickness of the brazing alloy, so that the composition of the liquid remains homogeneous with a precise initial equilibrium composition during the whole brazing process, (ii) the melting of the joint occurs in two steps : at lower temperature, it involves only partially melting, and boron diffusion in pure Ni leads to the precipitation of fine Ni3B borides at the interface ; in a second stage, at higher temperature, melting is complete and thermodynamic equilibrium requires significant dissolution of nickel, which also involves the dissolution of part of borides already formed. Secondly, nickel plating technique was used on Inconel 625 nickel-based superalloy. A thin layer of Ni with varying thickness, has been electrodeposited to observe the gradual dissolution of Inconel and microstructural features formation due to the presence of superalloy alloying elements. It has been observed that the nickel coating does not prevent precipitation in the base metal as boron diffuse rapidly through the coating width. In the intermediate nickel plating width, fragile precipitates of nickel borides have been observed, because the contribution of Inconel alloying elements to the melt was very limited. In absence of nickel plating on the superalloy, the formation of Nb and Cr-Mo borides phase has been observed. Efforts have been made to evaluate the accuracy of Boron measurement by energy dispersion X-ray spectroscopy (EDS) in the MC2 superalloy and BNi-2 filler metal. The most accurate method to quantify Boron using EDS is by composition difference. A precision of 5 at.% has been reached when using optimized data acquisition and post processing schemes. Ultimately, Electron Backscatter Diffraction (EBSD) combined with localized EDS analysis has been proven invaluable in conclusively identifying micrometer sized boride precipitates ; thus further improving the characterization of brazed Ni-based superalloys.

Plasma enhanced chemical vapor deposition of metalboride interfacial layers as diffusion barriers for nanostructured diamond growth on cobalt containing alloys CoCrMo and WC-Co

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.

This work is a compilation of theory, finite element modeling and experimental research related to the use of microwave plasma enhanced chemical vapor deposition (MPECVD) of diborane to create metal-boride surface coatings on CoCrMo and WC-Co, including the subsequent growth of nanostructured diamond (NSD). Motivation for this research stems from the need for wear resistant coatings on industrial materials, which require improved wear resistance and product lifetime to remain competitive and satisfy growing demand. Nanostructured diamond coatings are a promising solution to material wear but cannot be directly applied to cobalt containing substrates due to graphite nucleation. Unfortunately, conventional pre-treatment methods, such as acid etching, render the substrate too brittle. Thus, the use of boron in a MPECVD process is explored to create robust interlayers which inhibit carbon-cobalt interaction. Furthermore, modeling of the MPECVD process, through the COMSOL MultiphysicsRTM platform, is performed to provide insight into plasma-surface interactions using the simulation of a real-world apparatus. Experimental investigation of MPECVD boriding and NSD deposition was conducted at surface temperatures from 700 to 1100 °C. Several well-adhered metal-boride surface layers were formed: consisting of CoB, CrB, WCoB, CoB and/or W2CoB2. Many of the interlayers were shown to be effective diffusion barriers against elemental cobalt for improving nucleation and adhesion of NSD coatings; diamond on W2CoB2 was well adhered. However, predominantly WCoB and CoB phase interlayers suffered from diamond film delamination. Metal-boride and NSD surfaces were evaluated using glancing-angle x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), cross-sectional scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), micro-Raman spectroscopy, nanoindentation, scratch testing and epoxy pull testing. COMSOL MultiphysicsRTM was used to construct a representation of the MPECVD chamber. Relevant material properties, boundary conditions and adjustable parameters were applied to match the actual experimental set-up. Despite approximations, simulations for the surface temperature and surface accumulation matched well with experimental data. The combination of data from CoCrMo, WC-Co and modeling of the MPECVD process confirms that the use of boron to create metal-boride interlayers is applicable for subsequent nanostructured diamond coatings and that the surface temperature and deposition thickness can be predicted using finite element modeling.

Deposition and characterization of aluminum magnesium boride thin film coatings

NASA Astrophysics Data System (ADS)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness. Furthermore, a very low friction coefficient (0.04 - 0.05) has been observed for high vacuum level-as deposited AlMgB14 films, which could be ascribed to the in situ formation of a surface self-lubricating layer. Unlike most boron-rich boride films, high vacuum level-as deposited AlMgB14 films also possess a low n-type electrical resistivity, which is a consequence of high carrier concentration and moderate carrier mobility. The operative electrical transport mechanism and doping behavior for high vacuum level-as deposited AlMgB14 films are discussed in detail in this thesis.

Germanium resistance thermometer calibration at superfluid helium temperatures

NASA Technical Reports Server (NTRS)

Mason, F. C.

1985-01-01

The rapid increase in resistance of high purity semi-conducting germanium with decreasing temperature in the superfluid helium range of temperatures makes this material highly adaptable as a very sensitive thermometer. Also, a germanium thermometer exhibits a highly reproducible resistance versus temperature characteristic curve upon cycling between liquid helium temperatures and room temperature. These two factors combine to make germanium thermometers ideally suited for measuring temperatures in many cryogenic studies at superfluid helium temperatures. One disadvantage, however, is the relatively high cost of calibrated germanium thermometers. In space helium cryogenic systems, many such thermometers are often required, leading to a high cost for calibrated thermometers. The construction of a thermometer calibration cryostat and probe which will allow for calibrating six germanium thermometers at one time, thus effecting substantial savings in the purchase of thermometers is considered.

Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1975-01-01

Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

Vapor pressure of germanium precursors

NASA Astrophysics Data System (ADS)

Pangrác, J.; Fulem, M.; Hulicius, E.; Melichar, K.; Šimeček, T.; Růžička, K.; Morávek, P.; Růžička, V.; Rushworth, S. A.

2008-11-01

The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH 3) 4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC 2H 5) 4, CASRN 14165-55-0) was determined using a static method in the temperature range 259-303 K. The experimental vapor pressure data were fit with the Antoine equation. The mass spectra before and after degassing by vacuum distillation at low temperature are also reported and discussed.

Crystal growth of HVPE-GaN doped with germanium

NASA Astrophysics Data System (ADS)

Iwinska, M.; Takekawa, N.; Ivanov, V. Yu.; Amilusik, M.; Kruszewski, P.; Piotrzkowski, R.; Litwin-Staszewska, E.; Lucznik, B.; Fijalkowski, M.; Sochacki, T.; Teisseyre, H.; Murakami, H.; Bockowski, M.

2017-12-01

Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results were studied and compared. Influence of different flows of germanium tetrachloride, precursor of germanium, on the grown crystals was investigated. Ammonothermal GaN substrates were used as seeds for crystallization. Structural, electrical, and optical properties of HVPE-GaN doped with germanium are presented and discussed in detail. They were compared to properties of HVPE-GaN doped with silicon and also grown on native seeds of high quality.

Direct synthesis of magnesium borohydride

DOEpatents

Ronnebro, Ewa Carin Ellinor [Kennewick, WA; Severa, Godwin [Honolulu, HI; Jensen, Craig M [Kailua, HI

2012-04-03

A method is disclosed for directly preparing an alkaline earth metal borohydride, i.e. Mg(BH.sub.4).sub.2, from the alkaline earth metal boride MgB.sub.2 by hydrogenating the MgB.sub.2 at an elevated temperature and pressure. The boride may also be doped with small amounts of a metal chloride catalyst such as TiCl.sub.3 and/or NiCl.sub.2. The process provides for charging MgB.sub.2 with high pressure hydrogen above at least 70 MPa while simultaneously heating the material to about 350.degree. C. to about 400.degree. C. The method is relatively simple and inexpensive and provides a reversible hydride compound having a hydrogen capacity of at least 11 wt %.

The low-lying quartet electronic states of group 14 diatomic borides XB (X = C, Si, Ge, Sn, Pb)

NASA Astrophysics Data System (ADS)

Pontes, Marcelo A. P.; de Oliveira, Marcos H.; Fernandes, Gabriel F. S.; Da Motta Neto, Joaquim D.; Ferrão, Luiz F. A.; Machado, Francisco B. C.

2018-04-01

The present work focuses in the characterization of the low-lying quartet electronic and spin-orbit states of diatomic borides XB, in which X is an element of group 14 (C, Si, Ge, Sn, PB). The wavefunction was obtained at the CASSCF/MRCI level with a quintuple-ζ quality basis set. Scalar relativistic effects were also taken into account. A systematic and comparative analysis of the spectroscopic properties for the title molecular series was carried out, showing that the (1)4Π→X4Σ- transition band is expected to be measurable by emission spectroscopy to the GeB, SnB and PbB molecules, as already observed for the lighter CB and SiB species.

All-inorganic Germanium nanocrystal films by cationic ligand exchange

DOE PAGES

Wheeler, Lance M.; Nichols, Asa W.; Chernomordik, Boris D.; ...

2016-01-21

In this study, we introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport inmore » germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.« less

Organotrichlorogermane synthesis by the reaction of elemental germanium, tetrachlorogermane and organic chloride via dichlorogermylene intermediate.

PubMed

Okamoto, Masaki; Asano, Takuya; Suzuki, Eiichi

2004-08-07

Organotrichlorogermanes were synthesized by the reaction of elemental germanium, tetrachlorogermane and organic chlorides, methyl, propyl, isopropyl and allyl chlorides. Dichlorogermylene formed by the reaction of elemental germanium with tetrachlorogermane was the reaction intermediate, which was inserted into the carbon-chlorine bond of the organic chloride to give organotrichlorogermane. When isopropyl or allyl chloride was used as an organic chloride, organotrichlorogermane was formed also in the absence of tetrachlorogermane. These chlorides were converted to hydrogen chloride, which subsequently reacted with elemental germanium to give the dichlorogermylene intermediate. The reaction of elemental germanium, tetrachlorogermane and organic chlorides provides a simple and easy method for synthesizing organotrichlorogermanes, and all the raw materials are easily available.

Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

PubMed

Zhang, Lingen; Xu, Zhenming

2017-01-05

Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO 2 . The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way. Copyright © 2016. Published by Elsevier B.V.

Germanium precipitation from collecting-mains liquor with tannin extract in an alkaline medium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvedev, K.P.; Mikhailov, N.F.; Petrapol'skaya, V.M.

1976-01-01

It is proposed to precipitate germanium in a slightly alkaline medium, with a neutral solution of tannin extract in aqueous alkali. The effects of various factors on germanium recovery from collecting-mains liquors have been studied.

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

PubMed Central

Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

2017-01-01

Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material. PMID:28290495

Microstructural characterization of Ni-based self-fluxing alloy after selective surface-engineering using diode laser

NASA Astrophysics Data System (ADS)

Chun, Eun-Joon; Park, Changkyoo; Nishikawa, Hiroshi; Kim, Min-Su

2018-06-01

The microstructural characterization of thermal-sprayed Ni-based self-fluxing alloy (Metco-16C®) after laser-assisted homogenization treatment was performed. To this end, a high-power diode laser system was used. This supported the real-time control of the target homogenization temperature at the substrate surface. Non-homogeneities of the macrosegregation of certain elements (C and Cu) and the local concentration of Cr-based carbides and borides in certain regions in the as-sprayed state could be enhanced with the application of homogenization. After homogenization at 1423 K, the hardness of the thermal-sprayed layer was found to have increased by 1280 HV from the as-sprayed state (750 HV). At this homogenization temperature, the microstructure of the thermal-sprayed layer consisted of a lamellar structuring of the matrix phase (austenite and Ni3Si) with fine (<5 μm) carbides and borides (the rod-like phase of Cr5B3, the lumpy phase of M23C6, and the extra-fine phase of M7C3). Despite the formation of several kinds of carbides and borides during homogenization at 1473 K, the lowest hardness level was found to be less than that of the as-sprayed state, because of the liquid-state homogenization treatment without formation of lamellar structuring between austenite and Ni3Si.

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Croll, A.; Sorgenfrei, T.

2017-01-01

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: Float zone growth, Bridgman growth, and Detached Bridgman growth. The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

NASA research on refractory compounds.

NASA Technical Reports Server (NTRS)

Gangler, J. J.

1971-01-01

The behavior and properties of the refractory carbides, nitrides, and borides are being investigated by NASA as part of its research aimed at developing superior heat resistant materials for aerospace applications. Studies of the zirconium-carbon-oxygen system show that zirconium oxycarbides of different compositions and lattice parameters can be formed between 1500 C and 1900 C and are stable below 1500 C. More applied studies show that hot working generally improves the microstructure and therefore the strength of TiC and NbC. Sintering studies on UN indicate that very high densities can be achieved. Hot pressing of cermets of HfN and HfC produces good mechanical properties for high temperature bearing applications. Attempts to improve the impact resistance of boride composites by the addition of a nickel or carbon yarn were not overly successful.

Ceramic fibers from Si-B-C polymer precursors

NASA Technical Reports Server (NTRS)

Riccitiello, S. R.; Hsu, M. S.; Chen, T. S.

1993-01-01

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Low-cost industrially available molybdenum boride and carbide as "platinum-like" catalysts for the hydrogen evolution reaction in biphasic liquid systems.

PubMed

Scanlon, Micheál D; Bian, Xiaojun; Vrubel, Heron; Amstutz, Véronique; Schenk, Kurt; Hu, Xile; Liu, BaoHong; Girault, Hubert H

2013-02-28

Rarely reported low-cost molybdenum boride and carbide microparticles, both of which are available in abundant quantities due to their widespread use in industry, adsorb at aqueous acid-1,2-dichloroethane interfaces and efficiently catalyse the hydrogen evolution reaction in the presence of the organic electron donor - decamethylferrocene. Kinetic studies monitoring biphasic reactions by UV/vis spectroscopy, and further evidence provided by gas chromatography, highlight (a) their superior rates of catalysis relative to other industrially significant transition metal carbides and silicides, as well as a main group refractory compound, and (b) their highly comparable rates of catalysis to Pt microparticles of similar dimensions. Insight into the catalytic processes occurring for each adsorbed microparticle was obtained by voltammetry at the liquid-liquid interface.

Ternary ceramic thermal spraying powder and method of manufacturing thermal sprayed coating using said powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vogli, Evelina; Sherman, Andrew J.; Glasgow, Curtis P.

The invention describes a method for producing ternary and binary ceramic powders and their thermal spraying capable of manufacturing thermal sprayed coatings with superior properties. Powder contain at least 30% by weight ternary ceramic, at least 20% by weight binary molybdenum borides, at least one of the binary borides of Cr, Fe, Ni, W and Co and a maximum of 10% by weight of nano and submicro-sized boron nitride. The primary crystal phase of the manufactured thermal sprayed coatings from these powders is a ternary ceramic, while the secondary phases are binary ceramics. The coatings have extremely high resistance againstmore » corrosion of molten metal, extremely thermal shock resistance and superior tribological properties at low and at high temperatures.« less

Design of Wear-Resistant Austenitic Steels for Selective Laser Melting

NASA Astrophysics Data System (ADS)

Lemke, J. N.; Casati, R.; Lecis, N.; Andrianopoli, C.; Varone, A.; Montanari, R.; Vedani, M.

2018-03-01

Type 316L stainless steel feedstock powder was modified by alloying with powders containing carbide/boride-forming elements to create improved wear-resistant austenitic alloys that can be readily processed by Selective Laser Melting. Fe-based alloys with high C, B, V, and Nb contents were thus produced, resulting in a microstructure that consisted of austenitic grains and a significant amount of hard carbides and borides. Heat treatments were performed to modify the carbide distribution and morphology. Optimal hard-phase spheroidization was achieved by annealing the proposed alloys at 1150 °C for 1 hour followed by water quenching. The total increase in hardness of samples containing 20 pct of C/B-rich alloy powder was of 82.7 pct while the wear resistance could be increased by a factor of 6.

Advances in fractal germanium micro/nanoclusters induced by gold: microstructures and properties.

PubMed

Chen, Zhiwen; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

2014-02-01

Germanium materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, electrical, optical, and thermoelectric power properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the microstructures and various properties of the fractal germanium micro/nanoclusters induced by gold prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the integer and non-integer dimensional germanium micro/nanoclusters such as nanoparticles, nanorings, and nanofractals induced by gold and annealing. In particular, the nonlinear electrical behavior of a gold/germanium bilayer film with the interesting nanofractal is discussed in detail. In addition, the third-order optical nonlinearities of the fractal germanium nanocrystals embedded in gold matrix will be summarized by using the sensitive and reliable Z-scan techniques aimed to determine the nonlinear absorption coefficient and nonlinear refractive index. Finally, we emphasize the thermoelectric power properties of the gold/germanium bilayer films. The thermoelectric power measurement is considered to be a more effective method than the conductivity for investigating superlocalization in a percolating system. This research may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, germanium thin films with a variety of fascinating micro/nanoclusters will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.

40 CFR 421.186 - Pretreatment standards for new sources.

Code of Federal Regulations, 2013 CFR

2013-07-01

... Germanium and Gallium Subcategory § 421.186 Pretreatment standards for new sources. Except as provided in 40... sources. The mass of wastewater pollutants in primary and secondary germanium and gallium process... Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1...

40 CFR 421.184 - Standards of performance for new sources.

Code of Federal Regulations, 2014 CFR

2014-07-01

... Secondary Germanium and Gallium Subcategory § 421.184 Standards of performance for new sources. Any new... liquor. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant... air pollution control. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant...

40 CFR 421.185 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Secondary Germanium and Gallium Subcategory § 421.185 Pretreatment standards for existing sources. Except as... germanium and gallium process wastewater introduced into a POTW must not exceed the following values: (a) Still liquor. PSES for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or...

40 CFR 421.184 - Standards of performance for new sources.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Secondary Germanium and Gallium Subcategory § 421.184 Standards of performance for new sources. Any new... liquor. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant... air pollution control. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant...

40 CFR 421.185 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2013 CFR

2013-07-01

... Secondary Germanium and Gallium Subcategory § 421.185 Pretreatment standards for existing sources. Except as... germanium and gallium process wastewater introduced into a POTW must not exceed the following values: (a) Still liquor. PSES for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or...

40 CFR 421.186 - Pretreatment standards for new sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Germanium and Gallium Subcategory § 421.186 Pretreatment standards for new sources. Except as provided in 40... sources. The mass of wastewater pollutants in primary and secondary germanium and gallium process... Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1...

40 CFR 421.185 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2014 CFR

2014-07-01

... Secondary Germanium and Gallium Subcategory § 421.185 Pretreatment standards for existing sources. Except as... germanium and gallium process wastewater introduced into a POTW must not exceed the following values: (a) Still liquor. PSES for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or...

40 CFR 421.186 - Pretreatment standards for new sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Germanium and Gallium Subcategory § 421.186 Pretreatment standards for new sources. Except as provided in 40... sources. The mass of wastewater pollutants in primary and secondary germanium and gallium process... Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1...

40 CFR 421.186 - Pretreatment standards for new sources.

Code of Federal Regulations, 2014 CFR

2014-07-01

... Germanium and Gallium Subcategory § 421.186 Pretreatment standards for new sources. Except as provided in 40... sources. The mass of wastewater pollutants in primary and secondary germanium and gallium process... Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1...

40 CFR 421.185 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Secondary Germanium and Gallium Subcategory § 421.185 Pretreatment standards for existing sources. Except as... germanium and gallium process wastewater introduced into a POTW must not exceed the following values: (a) Still liquor. PSES for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or...

40 CFR 421.186 - Pretreatment standards for new sources.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Germanium and Gallium Subcategory § 421.186 Pretreatment standards for new sources. Except as provided in 40... sources. The mass of wastewater pollutants in primary and secondary germanium and gallium process... Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1...

40 CFR 421.185 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Secondary Germanium and Gallium Subcategory § 421.185 Pretreatment standards for existing sources. Except as... germanium and gallium process wastewater introduced into a POTW must not exceed the following values: (a) Still liquor. PSES for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or...

40 CFR 421.184 - Standards of performance for new sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Secondary Germanium and Gallium Subcategory § 421.184 Standards of performance for new sources. Any new... liquor. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant... air pollution control. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant...

40 CFR 421.184 - Standards of performance for new sources.

Code of Federal Regulations, 2013 CFR

2013-07-01

... Secondary Germanium and Gallium Subcategory § 421.184 Standards of performance for new sources. Any new... liquor. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant... air pollution control. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant...

40 CFR 421.184 - Standards of performance for new sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Secondary Germanium and Gallium Subcategory § 421.184 Standards of performance for new sources. Any new... liquor. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or pollutant... air pollution control. NSPS for the Primary and Secondary Germanium and Gallium Subcategory Pollutant...

Electronic Structure Properties and a Bonding Model of Thermoelectric Half-Heusler and Boride Phases

NASA Astrophysics Data System (ADS)

Simonson, Jack William

Half-Heusler alloys MNiSn and MCoSb (M = Ti, Zr, Hf) and layered boride intermetallics with structure types YCrB4 and Er 3CrB7 were designed, synthesized, and characterized. The thermoelectric properties of these two classes of alloys were measured from room temperature to 1100 K with the intent of indirectly studying their electronic structure properties and gauging not only their suitability but that of related alloys for high temperature thermoelectric power generation. In the case of the half-Heusler alloys, transition metals were substituted to both the M and Ni/Co sites to study the resultant modifications of the d-orbital-rich portion of the electronic structure near the Fermi energy. This modification and subsequent pinning of the Fermi energy within the gap is discussed herein in terms of first principles electronic structure calculations from the literature. In the half-Heusler alloys, it was found that substitution of transition metals invariably led to a decrease in the thermopower, while the resistivity typically maintained its semiconducting trend. On the other hand, Sn doping in MCoSb type alloys -- a dopant that has been known for some time to be efficient -- was shown to result in high ZT at temperatures in excess of 1000 K. Moreover, the band gaps of the transition metal-doped alloys measured in this work offer insight into the discrepancy between the predicted and measured band gaps in the undoped parent compositions. In the case of the layered boride alloys, on the other hand, few electronic calculations have been published, thus prompting the generalization of a well-known electron counting rule -- which is typically used to study molecular organometallics, boranes, and metallocenes -- to predict the trends in the densities of states of crystalline solids that possess the requisite deltahedral bonding geometry. In accordance with these generalized electronic counting rules, alloys of the form RMB4 (R = Y, Gd, Ho; M = Cr, Mo, W) were measured to be n-type semiconductors with band gaps ranging from 0.15 eV to 0.25 eV. These alloys exhibited thermoelectric power factors comparable with those of other potential boride thermoelectric materials reported in the literature. Furthermore, as a result of the procedure developed for precision synthesis of boron-rich intermetallics and the improved understanding of bonding trends, layered borides of several previously overlooked structure-types were synthesized and screened for superconductivity. Consequently, alloys of the MoB4 phase were discovered to be superconducting when doped with Nb or Ti. Electrical resistivity measurements of superconducting transitions between 6 and 8 K in these materials were confirmed via magnetic susceptibility measurements and x-ray diffraction. Structural measurements indicated opposite trends in lattice modification than those reported for the superconducting transition metal diborides.

40 CFR 421.182 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2012 CFR

2012-07-01

... CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.182 Effluent limitations guidelines...) Still liquor. BPT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant... Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum...

40 CFR 421.182 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2010 CFR

2010-07-01

... CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.182 Effluent limitations guidelines...) Still liquor. BPT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant... Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum...

40 CFR 421.182 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2014 CFR

2014-07-01

... CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.182 Effluent limitations guidelines...) Still liquor. BPT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant... Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum...

40 CFR 421.182 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2013 CFR

2013-07-01

... CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.182 Effluent limitations guidelines...) Still liquor. BPT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant... Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum...

40 CFR 421.182 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2011 CFR

2011-07-01

... CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.182 Effluent limitations guidelines...) Still liquor. BPT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant... Secondary Germanium and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum...

Electronic considerations for externally segmented germanium detectors

NASA Technical Reports Server (NTRS)

Madden, N. W.; Landis, D. A.; Goulding, F. S.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Malone, D. F.; Pollard, M. J.

1991-01-01

The dominant background source for germanium gamma ray detector spectrometers used for some astrophysics observations is internal beta decay. Externally segmented germanium gamma ray coaxial detectors can identify beta decay by localizing the event. Energetic gamma rays interact in the germanium detector by multiple Compton interactions while beta decay is a local process. In order to recognize the difference between gamma rays and beta decay events, the external electrode (outside of detector) is electrically partitioned. The instrumentation of these external segments and the consequence with respect to the spectrometer energy signal is examined.

Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6): the largest metalloid cluster compound of germanium: on the way to fullerene-like compounds?

PubMed

Schenk, Christian; Schnepf, Andreas

2008-10-14

The reaction of GeBr with LiGe(SiMe(3))(3) yields the largest metalloid cluster compound of germanium Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6), in which 14 germanium atoms are arranged as a hollow sphere in the cluster core, showing that in the case of germanium also fullerene-like compounds might be present in the borderland between the molecular and solid states.

Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Croell, A.

2012-01-01

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Quantum interference magnetoconductance of polycrystalline germanium films in the variable-range hopping regime

NASA Astrophysics Data System (ADS)

Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Zhan, Zhiqiang; Wu, Weidong

2018-06-01

Direct evidence of quantum interference magnetotransport in polycrystalline germanium films in the variable-range hopping (VRH) regime is reported. The temperature dependence of the conductivity of germanium films fulfilled the Mott VRH mechanism with the form of ? in the low-temperature regime (?). For the magnetotransport behaviour of our germanium films in the VRH regime, a crossover, from negative magnetoconductance at the low-field to positive magnetoconductance at the high-field, is observed while the zero-field conductivity is higher than the critical value (?). In the regime of ?, the magnetoconductance is positive and quadratic in the field for some germanium films. These features are in agreement with the VRH magnetotransport theory based on the quantum interference effect among random paths in the hopping process.

NEUTRONIC REACTOR FUEL COMPOSITION

DOEpatents

Thurber, W.C.

1961-01-10

Uranium-aluminum alloys in which boron is homogeneously dispersed by adding it as a nickel boride are described. These compositions have particular utility as fuels for neutronic reactors, boron being present as a burnable poison.

Variable-Temperature Cryostat For Radiation-Damage Testing Of Germanium Detectors

NASA Technical Reports Server (NTRS)

Floyd, Samuel R.; Puc, Bernard P.

1992-01-01

Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.

Recovery of germanium-68 from irradiated targets

DOEpatents

Phillips, Dennis R.; Jamriska, Sr., David J.; Hamilton, Virginia T.

1993-01-01

A process for selective separation of germanium-68 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, adjusting the pH of the second ion-containing solution to within a range of from about 0.7 to about 3.0, adjusting the soluble metal halide concentration in the second ion-containing solution to a level adapted for subsequent separation of germanium, contacting the pH-adjusted, soluble metal halide-containing second ion-containing solution with a dextran-based material whereby germanium ions are separated by the dextran-based material, and recovering the germanium from the dextran-based material, preferably by distillation.

Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared

NASA Astrophysics Data System (ADS)

Tosi, Alberto; Dalla Mora, Alberto; Zappa, Franco; Cova, Sergio

2007-09-01

Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.

Generator for gallium-68 and compositions obtained therefrom

DOEpatents

Neirinckx, Rudi D.; Davis, Michael A.

1981-01-01

A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

Slow Crack Growth of Germanium

NASA Technical Reports Server (NTRS)

Salem, Jon

2016-01-01

The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A=1.7), it is not as anisotropic as SiC, NiAl, or Cu, as evidence by consistent fracture toughness on the 100, 110, and 111 planes. Germanium does not exhibit significant slow crack growth in distilled water. (n=100). Practical values for engineering design are a fracture toughness of 0.7 MPam and a Weibull modulus of m=6+/-2. For well ground and reasonable handled coupons, fracture strength should be greater than 30 MPa.

Anomalous stress response of ultrahard WB n compounds

DOE PAGES

Li, Quan; Zhou, Dan; Zheng, Weitao; ...

2015-10-29

Boron-rich tungsten borides are premier prototypes of a new class of ultrahard compounds. Here, we show by first-principles calculations that their stress-strain relations display surprisingly diverse and anomalous behavior under a variety of loading conditions. Most remarkable is the dramatically changing bonding configurations and deformation modes with rising boron concentration in WB n (n=2, 3, 4), resulting in significantly different stress responses and unexpected indentation strength variations. This novel phenomenon stems from the peculiar structural arrangements in tungsten borides driven by boron’s ability to form unusually versatile bonding states. Our results elucidate the intriguing deformation mechanisms that define a distinctmore » type of ultrahard material. Here, these new insights underscore the need to explore unconventional structure-property relations in a broad range of transition-metal light-element compounds.« less

X-Ray photoelectron spectroscopy study of radiofrequency-sputtered titanium, carbide, molybdenum carbide, and titanium boride coatings and their friction properties

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1977-01-01

Radiofrequency sputtered coatings of titanium carbide, molybdenum carbide and titanium boride were tested as wear resistant coatings on stainless steel in a pin on disk apparatus. X-ray photoelectron spectroscopy (XPS) was used to analyze the sputtered films with regard to both bulk and interface composition in order to obtain maximum film performance. Significant improvements in friction behavior were obtained when properly biased films were deposited on deliberately preoxidized substrates. XPS depth profile data showed thick graded interfaces for bias deposited films even when adherence was poor. The addition of 10 percent hydrogen to the sputtering gas produced coatings with thin poorly adherent interfaces. Results suggest that some of the common practices in the field of sputtering may be detrimental to achieving maximum adherence and optimum composition for these refractory compounds.

Electronic, structural and magnetic studies of niobium borides of group 8 transition metals, Nb2MB2 (M=Fe, Ru, Os) from first principles calculations

NASA Astrophysics Data System (ADS)

Touzani, Rachid St.; Fokwa, Boniface P. T.

2014-03-01

The Nb2FeB2 phase (U3Si2-type, space group P4/mbm, no. 127) is known for almost 50 years, but until now its magnetic properties have not been investigated. While the synthesis of Nb2OsB2 (space group P4/mnc, no. 128, a twofold superstructure of U3Si2-type) with distorted Nb-layers and Os2-dumbbells was recently achieved, "Nb2RuB2" is still not synthesized and its crystal structure is yet to be revealed. Our first principles density functional theory (DFT) calculations have confirmed not only the experimental structures of Nb2FeB2 and Nb2OsB2, but also predict "Nb2RuB2" to crystalize with the Nb2OsB2 structure type. According to chemical bonding analysis, the homoatomic B-B interactions are optimized and very strong, but relatively strong heteroatomic M-B, B-Nb and M-Nb bonds (M=Fe, Ru, Os) are also found. These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of these ternary borides. The density-of-states at the Fermi level predicts metallic behavior, as expected, from metal-rich borides. Analysis of possible magnetic structures concluded preferred antiferromagnetic ordering for Nb2FeB2, originating from ferromagnetic interactions within iron chains and antiferromagnetic exchange interactions between them.

Specific features of thermal and magnetic properties of Yb B50 at low temperatures

NASA Astrophysics Data System (ADS)

Novikov, V. V.; Zhemoedov, N. A.; Matovnikov, A. V.; Mitroshenkov, N. V.; Popova, E. A.; Tolstosheev, A. K.; Malkin, B. Z.; Bud'ko, S. L.

2018-05-01

Heat capacity, thermal expansion, and magnetization of ytterbium boride Yb B50 were studied at temperatures 0.6-300 K, 5-300 K, and 2-300 K, respectively. We revealed two smooth peaks at about 4.0 and 60 K in the temperature dependence of the heat capacity. A comparison with the heat capacity of the diamagnetic isostructural boride Lu B50 shows that these anomalies can be attributed to excitations in the ytterbium sublattice (Schottky anomalies). A scheme for splitting of the ground F 7 /2 2 multiplet of Y b3 + ions in the crystal field is proposed. Reliability of the proposed crystal-field energies of the Y b3 + ions is confirmed by the analysis of temperature dependencies of magnetic susceptibility and magnetization in applied magnetic fields up to 55 kOe. A clear anisotropy of the thermal expansion and a negative expansion within a wide temperature range (40-185 K) were observed. Assuming that this anomaly of the thermal expansion in higher borides is caused by the specific thermal evolution of a crystal lattice observed earlier, in particular, in Lu B50 , and the interaction of rare-earth ions with lattice strains, we have determined phenomenological Grüneisen parameters which characterize effects due to thermal transitions of Y b3 + ions between the ground and excited states. A phase transition of Yb B50 to any magnetically ordered state was not observed down to the lowest temperatures of experiments.

Fusion welding of a modern borated stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robino, C.V.; Cieslak, M.J.

1997-01-01

Experiments designed to assess the fabrication and service weldability of 304B4A borated stainless steel were conducted. Welding procedures and parameters for manual gas tungsten arc (GTA) welding, autogenous electron beam (EB) welding and filler-added EB welding were developed and found to be similar to those for austenitic stainless steels. Following the procedure development, four test welds were produced and evaluated by microstructural analysis and Charpy impact testing. Further samples were used for determination of the postweld heat treatment (PWHT) response of the welds. The fusion zone structure of welds in this alloy consists of primary austenite dendrites with an interdendriticmore » eutectic-like austenite/boride constituent. Welds also show an appreciable partially molten zone that consists of the austenite/boride eutectic surrounding unmelted austenite islands. The microstructure of the EB welds was substantially finer than that of the GTA welds, and boride coarsening was not observed in the solid state heat-affected zone (HAZ) of either weld type. The impact toughness of as-welded samples was found to be relatively poor, averaging less than 10 J for both GTA and EB welds. For fusion zone notched GTA and EB samples and centerline notched EB samples, fracture generally occurred along the boundary between the partially molten and solid-state regions of the HAZ. The results of the PWHT study were very encouraging, with typical values of the impact energy for HAZ notched samples approaching 40 J, or twice the minimum code-acceptable value.« less

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podkopaev, O. I.; Shimanskiy, A. F., E-mail: shimanaf@mail.ru; Kopytkova, S. A.

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

Mineral resource of the month: germanium

USGS Publications Warehouse

Jorgenson, John D.

2003-01-01

Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

Naturally occurring vapor-liquid-solid (VLS) Whisker growth of germanium sulfide

USGS Publications Warehouse

Finkelman, R.B.; Larson, R.R.; Dwornik, E.J.

1974-01-01

The first naturally occurring terrestrial example of vapor-liquid-solid (VLS) growth has been observed in condensates from gases released by burning coal in culm banks. Scanning electron microscopy, X-ray diffraction, and energy dispersive analysis indicate that the crystals consist of elongated rods (??? 100 ??m) of germanium sulfide capped by bulbs depleted in germanium. ?? 1974.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

DOE PAGES

Byrd, Ian; Chen, Hao; Webber, Theron; ...

2015-10-23

We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g -1 capacity (70%) can be retained at a current density of 600 mA g -1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structuremore » can efficiently accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.« less

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

NASA Astrophysics Data System (ADS)

Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

2012-06-01

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

Study of the possibility of growing germanium single crystals under low temperature gradients

NASA Astrophysics Data System (ADS)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.; Zhdankov, V. N.

2014-03-01

The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100-200 cm-2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.

Germanium layers grown by zone thermal crystallization from a discrete liquid source

NASA Astrophysics Data System (ADS)

Yatsenko, A. N.; Chebotarev, S. N.; Lozovskii, V. N.; Mohamed, A. A. A.; Erimeev, G. A.; Goncharova, L. M.; Varnavskaya, A. A.

2017-11-01

It is proposed and investigated a method for growing thin uniform germanium layers onto large silicon substrates. The technique uses the hexagonally arranged local sources filled with liquid germanium. Germanium evaporates on very close substrate and in these conditions the residual gases vapor pressure highly reduces. It is shown that to achieve uniformity of the deposited layer better than 97% the critical thickness of the vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

NASA Technical Reports Server (NTRS)

Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)

2014-01-01

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

Time integrated optical emission studies of the laser produced germanium plasma

NASA Astrophysics Data System (ADS)

Iqbal, Javed; Ahmed, R.; Baig, M. A.

2017-04-01

We present new time integrated data on the optical emission spectra of laser produced germanium plasma using a Q-switched Nd:YAG laser (1064 nm), power density up to about 5  ×  109 W cm-2 in conjunction with a set of five spectrometers covering a spectral range from 200 nm to 720 nm. Well resolved structure due to the 4p5s  →  4p2 transition array of neutral germanium and a few multiplets of singly ionized germanium have been observed. Plasma temperature has been determined in the range (9000-11 000) K using four different techniques; two line ratio method, Boltzmann plot, Saha-Boltzmann plot and Marotta’s technique whereas electron density has been deduced from the Stark broadened line profiles in the range (0.5-5.0)  ×  1017 cm-3, depending on the laser pulse energy to produce the germanium plasma. Full width at half maximum (FWHM) of a number of neutral and singly ionized germanium lines have been extracted by the Lorentzian fit to the experimentally observed line profiles. In addition, we have compared the experimentally measured relative line strengths for the 4p5s 3P0,1,2  →  4p2 3P0,1,2 multiplet with that calculated in the LS-coupling scheme revealing that the intermediate coupling scheme is more appropriate for the level designations in germanium.

The physical and mechanical metallurgy of advanced O+BCC titanium alloys

NASA Astrophysics Data System (ADS)

Cowen, Christopher John

This thesis comprises a systematic study of the microstructural evolution, phase transformation behavior, elevated-temperature creep behavior, room-temperature and elevated-temperature tensile behavior, and room-temperature fatigue behavior of advanced titanium-aluminum-niobium (Ti-Al-Nb) alloys with and without boron additions. The specific alloys studied were: Ti-5A1-45Nb (at%), Ti-15Al-33Nb (at%), Ti-15Al-33Nb-0.5B (at%), Ti-15Al-33Nb-5B (at%), Ti-21Al-29Nb (at%), Ti-22Al-26Nb (at%), and Ti-22Al-26Nb-5B (at%). The only alloy composition that had been previously studied before this thesis work began was Ti-22Al-26Nb (at%). Publication in peer-reviewed material science journals of the work performed in this thesis has made data available in the scientific literature that was previously non-existent. The knowledge gap for Ti-Al-Nb phase equilibria over the compositional range of Ti-23Al-27Nb (at%) to Ti-12Al-38Nb (at%) that existed before this work began was successfully filled. The addition of 5 at% boron to the Ti-15Al-33Nb alloy produced 5-9 volume percent boride phase needles within the microstructure. The chemical composition of the boride phase measured by electron microprobe was determined to be approximately B 2TiNb. The lattice parameters of the boride phase were simulated through density functional theory calculations by collaborators at the Air Force Research Laboratory based on the measured composition. Using the simulated lattice parameters, electron backscatter diffraction kikuchi patterns and selected area electron diffraction patterns obtained from the boride phase were successfully indexed according to the space group and site occupancies of the B27 orthorhombic crystal structure. This suggests that half the Ti (c) Wyckoff positions are occupied by Ti atoms and the other half are occupied by Nb atoms in the boride phase lattice. Creep deformation behavior is the main focus of this thesis and in particular understanding the dominant creep deformation mechanisms as a function of stress, temperature, and strain rate. Microstructure-creep relationships for Ti-Al-Nb-xB alloys were developed with the understanding gained. A rule-of-mixtures empirical model based on constituent phase volume fractions and strain rates was developed to predict the minimum creep rates of two-phase O+BCC microstructures. The most innovative results of this thesis were produced through the development of an in-situ creep testing methodology. The creep deformation evolution was chronicled in-situ during high temperature creep experiments, while creep displacement versus time data was simultaneously obtained. The in-situ experiments revealed that prior-BCC grain boundaries were the locus of damage accumulation during creep deformation. A methodology that allows in-situ observation of surface creep deformation as a function of creep displacement has yet to be presented in the literature.

Magnetism and structural chemistry of ternary borides RE2MB 6 ( RE = rare earth, M = Ru, Os)

NASA Astrophysics Data System (ADS)

Hiebl, K.; Rogl, P.; Nowotny, H.

1984-10-01

The magnetic behavior of the ternary borides RE2RuB 6 and RE2OsB 6 ( RE = Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) was studied in the temperature range 1.5 K < T < 1100 K. All compounds crystallize with the Y 2ReB 6-type structure and are characterized by direct RE- RE contacts and the formation of planar infinite two-dimensional rigid boron nets. The magnetic properties reveal a typical Van Vleck paramagnetism of free RE3+-ions at temperatures higher than 200 K with ferromagnetic interaction in the low-temperature range T < 55 K. The ferromagnetic ordering temperatures vary with the De Gennes factor. There is no indication for a magnetic contribution from the Ru(Os)-sublattice. Above 1.8 K none of the samples were found to be superconducting.

Electronic structure and mechanical properties of osmium borides, carbides and nitrides from first principles

NASA Astrophysics Data System (ADS)

Liang, Yongcheng; Zhao, Jianzhi; Zhang, Bin

2008-06-01

The stabilities, mechanical properties and electronic structures of osmium boride (OsB), carbide (OsC) and nitride (OsN), in the tungsten carbide (WC), rocksalt (NaCl), cesium chloride (CsCl) and zinc blende (ZnS) structures respectively, are systematically predicted by calculations from first-principles. Only four phases, namely, OsB(WC), OsB(CsCl), OsC(WC), and OsC(ZnS), are mechanically stable, and none is a superhard compound, contrary to previous speculation. Most importantly, we find that the changing trends of bulk modulus and shear modulus are completely different for OsB, OsC and OsN in same hexagonal WC structure, which indicates that the underlying sources of hardness and incompressibility are fundamentally different: the former is determined by bonding nature while the latter is closely associated with valence electron density.

The Influence of Nano-Scale Silicon Nitride Additions on the Physical and Magnetic Properties of Iron Sheathed Magnesium Boride Wires

NASA Astrophysics Data System (ADS)

Zhu, W.; Cave, J.

2006-03-01

The enhancement of flux line pinning in magnesium boride wires is a critical issue for their future applications in devices and machines. It is well known that small size dopants can significantly influence the current densities of these materials. Here, the influence of nanometric (<30nm) silicon nitride on physical properties and current density is presented. The iron-sheathed powder in tube wires were prepared using pure magnesium and boron powders with silicon nitride additions. The wires were rolled flat and treated at up to 900 degrees C in flowing argon. SEM and XRD were used to identify phases and microstructures. Magnetization critical currents, up to several 100 of thousands A/cm2, at various temperatures and fields (5K - 20K and up to 3 tesla) show that there are competing mechanisms from chemical and flux pinning effects.

Magnetic and magnetothermal studies of iron boride (FeB) nanoparticles

NASA Astrophysics Data System (ADS)

Hamayun, M. Asif; Abramchuk, Mykola; Alnasir, Hisham; Khan, Mohsin; Pak, Chongin; Lenhert, Steven; Ghazanfari, Lida; Shatruk, Michael; Manzoor, Sadia

2018-04-01

We report magnetic and magnetothermal properties of iron boride (FeB) nanoparticles prepared by surfactant-assisted ball milling of arc-melted bulk ingots of this binary alloy. Size-dependent magnetic properties were used to identify the transition to the single domain limit and calculate the anisotropy and exchange stiffness constants for this system. Extended milling is seen to produce coercivity enhancement and exchange bias of up to 270 Ôe at room temperature. The magnetothermal properties were investigated by measuring the response of single domain FeB nanoparticles to externally applied ac magnetic fields. All investigated particle sizes show a significant heating response, demonstrating their potential as candidates for magnetically induced hyperthermia. FeB nanoparticles were encapsulated into lipophilic domains of liposomes as evidenced by TEM. Exposure of HeLa cells to these liposomes did not affect cell viability, suggesting the biocompatibility of these new magnetic nanomaterials.

Identification of delamination failure of boride layer on common Cr-based steels

NASA Astrophysics Data System (ADS)

Taktak, Sukru; Tasgetiren, Suleyman

2006-10-01

Adhesion is an important aspect in the reliability of coated components. With low-adhesion of interfaces, different crack paths may develop depending on the local stress field at the interface and the fracture toughness of the coating, substrate, and interface. In the current study, an attempt has been made to identify the delamination failure of coated Cr-based steels by boronizing. For this reason, two commonly used steels (AISI H13, AISI 304) are considered. The steels contain 5.3 and 18.3 wt.% Cr, respectively. Boriding treatment is carried out in a slurry salt bath consisting of borax, boric acid, and ferrosilicon at a temperature range of 800 950 °C for 3, 5, and 7 h. The general properties of the boron coating are obtained by mechanical and metallographic characterization tests. For identification of coating layer failure, some fracture toughness tests and the Daimler-Benz Rockwell-C adhesion test are used.

Oriented bottom-up growth of armchair graphene nanoribbons on germanium

DOEpatents

Arnold, Michael Scott; Jacobberger, Robert Michael

2016-03-15

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

NASA Astrophysics Data System (ADS)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Front End Spectroscopy ASIC for Germanium Detectors

NASA Astrophysics Data System (ADS)

Wulf, Eric

Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at the anode and cathode of the device to allow the depth of the interaction within the crystal to be determined. Dr. De Geronimo has developed similar timing circuits for CZT detector ASICs. Furthermore, the timing circuitry of the ASIC is at the very end of the analog section, simplifying and mitigating risks in the redesign. In the first year, we propose to tweak the gain settings and to add timing to the silicon ASIC to match the requirements of a germanium detector. The design specifications of the ASIC will include advice from our collaborators Dr. Boggs from COSI and Dr. Shih from GRIPS. By using a master ASIC designer to integrate his proven front-end and back-end with only minor modifications, we are maximizing the probability of success. NRL has a commercial cross-strip germanium detector with 30 pF of capacitance per strip, including the flex circuit from the detector to the outside of the cryostat. The COSI and GRIPS detectors have a similar capacitance per strip on the outside of their mechanically cooled cryostat. The second year of the program will be devoted to testing the newly fabricated germanium cross-strip ASIC with the NRL germanium detector. At the end of the second year, NASA will have a TRL 5 ASIC for germanium detectors, allowing future missions, including COSI, GRX, and GRIPS, to operate within their thermal and electrical envelopes. At the end of the third year, a detector on COSI will be instrumented with the new ASIC allowing for a TRL 6 demonstration during the following COSI balloon flight.

Effect of Discharge Time on Plasma Electrolytic Borocarbonitriding of Pure Iron

NASA Astrophysics Data System (ADS)

Jin, Xiaoyue; Wu, Jie; Wang, Bin; Yang, Xuan; Chen, Lin; Qu, Yao; Xue, Wenbin

The plasma electrolytic borocarbonitriding (PEB/C/N) process on pure iron was carried out in 25% borax solution with glycerine and carbamide additives under different discharge time at 360V. The morphology and structure of PEB/C/N hardened layers were analyzed by SEM and XRD. The hardness profiles of hardened layers were measured by microhardness test. Corrosion behavior of PEB/C/N layers was evaluated by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Their wear performance was carried out using a pin-disc friction and wear tester under dry sliding test. The PEB/C/N samples mainly consisted of α-Fe, Fe2B, Fe3C, FeN, FeB, Fe2O3 and Fe4N phases, and the Fe2B phase was the dominant phase in the boride layer. It was found that the thickness of boride layer increased with the discharge time and reached 14μm after 60min treatment. The microhardness of the boride layer was up to 2100HV, which was much higher than that of the bare pure iron (about 150HV). After PEB/C/N treatment, the corrosion resistance of pure iron was slightly improved. The friction coefficient of PEB/C/N treated pure iron decreased to 0.129 from 0.556 of pure iron substrate. The wear rate of the PEB/C/N layer after 60min under dry sliding against ZrO2 ball was only 1/10 of that of the bare pure iron. The PEB/C/N treatment is an effective way to improve the wear behavior of pure iron.

Correlation between structural stability of LiBH4 and cation electronegativity in metal borides: an experimental insight for catalyst design.

PubMed

Cai, Weitong; Yang, Yuanzheng; Tao, Pingjun; Ouyang, Liuzhang; Wang, Hui

2018-04-03

Nanosized metal borides MBx (M = Mg, Ti, Fe, Si) are found to play an important role in enhancing the hydrogen storage performance of LiBH4 in this work. The hydrogen storage behavior and mechanism of these modified systems are investigated through TPD-MS, XRD, FTIR and SEM characterization methods. By introducing these metal borides into LiBH4 through ball milling, the systems display three dehydrogenation stages disclosing their similarity and distinction. The 1st stage starts at 190 °C, the 2nd stage ranges from 280 °C to 400 °C and the 3rd stage ends at 550 °C with a peak at round 440 °C similar to that of pristine LiBH4. Distinguishing features exist at the 2nd stage revealing the effectiveness of MBx in an order of MgB2 < TiB2 < FeB < SiB4. Significantly, reversibility up to 9.7 wt% is achieved from LiBH4 with assistance of SiB4. The catalytic effect of MBx is influenced by the Pauling electronegativity of M in MBx and the interfacial contact characteristic between LiBH4 and MBx. The larger electronegativity leads to an enhanced catalytic effect and consequently lower temperature at the major stage. In contrast to the components in the solid state, the molten LiBH4 promotes a catalytic effect due to a superior interfacial contact. These results provide an insight into designing high-performance catalysts applied to LiBH4 as a hydrogen storage material.

Boron-Based Hydrogen Storage: Ternary Borides and Beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajo, John J.

DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slowmore » rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sitler, Steven J.; Raja, Krishnan S.; Charit, Indrajit

Solid solutions of HfB 2-ZrB 2 mixtures were prepared by high-energy ball milling of diboride and additive powders followed by spark plasma sintering (SPS). A mixture of stoichiometric 1:1 HfB 2-ZrB 2 borides was the base composition to which Hf, Zr, Ta, LaB 6 or Gd 2O 3 was added. Hf, Zr and Ta were added in order to bring the boron-to-metal ratio down to 1.86, rendering the boride as MeB 1.86. In the case of LaB 6 and Gd 2O 3, 1.8 mol% was added. Electroanalytical behavior of hydrogen evolution reactions was evaluated in 1 M H 2SO 4more » and 1 M NaOH solutions. The LaB 6 additive material showed Tafel slopes of 125 and 90 mV/decade in acidic and alkaline solutions respectively. The Hf and Zr rich samples showed Tafel slopes of about 120 mV/decade in both electrolytes. The over potentials of hydrogen evolution reactions (at 10 mA/cm 2) in the alkaline solution were about 100 mV lower than those in acidic solution. The metal-rich diborides and addition of LaB 6 showed better hydrogen evolution reaction (HER) activities than the base 1:1 HfB 2-ZrB 2 stoichiometric diboride solid solution. Furthermore, the higher activity of metal-rich borides could be attributed to the increased electron population at the d-orbitals of the metal shown by band structure modeling calculations using the Density Functional Theory approach.« less

High-speed recovery of germanium in a convection-aided mode using functional porous hollow-fiber membranes.

PubMed

Ozawa, I; Saito, K; Sugita, K; Sato, K; Akiba, M; Sugo, T

2000-08-04

A porous hollow-fiber membrane capable of recovery of germanium from a liquid stream was prepared by radiation-induced graft polymerization of an epoxy-group-containing vinyl monomer, glycidyl methacrylate, and subsequent functionalization with 2,2'-iminodiethanol, di-2-propanolamine, N-methylglucamine, and 3-amino-1,2-propanediol. The functional group density was as high as 1.4 mol per kg of the resultant hollow fiber. The polymer chains containing functional groups surrounding the pores enabled a high-speed recovery of germanium during permeation of a germanium oxide (GeO2) solution through the pores of the hollow fiber. Because of a negligible diffusional mass-transfer resistance, germanium concentration changes with the effluent volume, i.e., breakthrough curves, overlapped irrespective of the residence time of the solution, which ranged from 0.37 to 3.7 s across the hollow fiber. After repeated use of adsorption and elution, the adsorption capacity did not deteriorate.

High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

NASA Technical Reports Server (NTRS)

Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

1993-01-01

Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

Filterability of the suspension from germanium precipitation with aqueous tannin extract solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailov, N.F.; Petropol'skii, V.M.; Semenenko, L.E.

1978-01-01

We have already described the use of a neutral aqueous solution of tannin extract to recover germanium from collecting-mains liquor in coking plants. Further pilot commercial trials have encountered problems with the poor filterability of the precipitate obtained when germanium is extracted with this reagent in alkaline media. There are published references to the colloidal nature of the precipitated tannin-germanium complex. It is also known that the alkalinity of the medium influences the degree of association in colloidal systems to a marked extent. Accordingly, special research was needed to establish the relationship between the pH of the precipitation medium andmore » the filterability of the germanium deposit. Samples of collecting-mains liquor were taken from one of the southern coking plants to determine the optimum filtration behavior. The collecting-mains liquor should first be purged of volatile ammonia and then adjusted to pH = 6.5 to 6.7 for precipitation.« less

Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

NASA Astrophysics Data System (ADS)

Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

2018-03-01

In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Germanium Resistance Thermometer For Subkelvin Temperatures

NASA Technical Reports Server (NTRS)

Castles, Stephen H.

1993-01-01

Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

Photovoltaic cell

DOEpatents

Gordon, Roy G.; Kurtz, Sarah

1984-11-27

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

Development of a new type of germanium detector for dark matter searches

NASA Astrophysics Data System (ADS)

Wei, Wenzhao

Monte Carlo simulation is an important tool used to develop a better understanding of important physical processes. This thesis describes three Monte Carlo simulations used to understand germanium detector response to low energy nuclear recoils and radiogenic backgrounds for direct dark matter searches. The first simulation is the verification of Barker-Mei model, a theoretical model for calculating the ionization efficiency for germanium detector for the energy range of 1 - 100 keV. Utilizing the shape analysis, a bin-to-bin comparison between simulation and experimental data was performed for verifying the accuracy of the Barker-Mei model. A percentage difference within 4% was achieved between data and simulation, which showed the validity of the Barker-Mei model. The second simulation is the study of a new type of germanium detector for n/gamma discrimination at 77 K with plasma time difference in pulse shape. Due to the poor time resolution, conventional P-type Point Contact (PPC) and coaxial germanium detectors are not capable of discriminating nuclear recoils from electron recoils. In this thesis, a new idea of using great detector granularity and plasma time difference in pulse shape to discriminate nuclear recoils from electron recoils with planar germanium detectors in strings was discussed. The anticipated sensitivity of this new detector array is shown for detecting dark matter. The last simulation is a study of a new type of germanium-detector array serving as a PMT screening facility for ultra-low background dark matter experiments using noble liquid xenon as detector material such LUX/LZ and XENON100/XENON1T. A well-shaped germanium detector array and a PMT were simulated to study the detector response to the signal and background for a better understanding of the radiogenic gamma rays from PMTs. The detector efficiency and other detector performance were presented in this work.

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

NASA Technical Reports Server (NTRS)

Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

1989-01-01

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

NASA Astrophysics Data System (ADS)

Martineau, F.; Namur, K.; Mallet, J.; Delavoie, F.; Endres, F.; Troyon, M.; Molinari, M.

2009-11-01

The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

Analysis of high-purity germanium dioxide by ETV-ICP-AES with preliminary concentration of trace elements.

PubMed

Medvedev, Nickolay S; Shaverina, Anastasiya V; Tsygankova, Alphiya R; Saprykin, Anatoly I

2016-08-01

The paper presents a combined technique of germanium dioxide analysis by inductively coupled plasma atomic emission spectrometry (ICP-AES) with preconcentration of trace elements by distilling off matrix and electrothermal (ETV) introduction of the trace elements concentrate into the ICP. Evaluation of metrological characteristics of the developed technique of high-purity germanium dioxide analysis was performed. The limits of detection (LODs) for 25 trace elements ranged from 0.05 to 20ng/g. The accuracy of proposed technique is confirmed by "added-found" («or spiking») experiment and comparing the results of ETV-ICP-AES and ICP-AES analysis of high purity germanium dioxide samples. Copyright © 2016 Elsevier B.V. All rights reserved.

Low-temperature irradiation-induced defects in germanium: In situ analysis

NASA Astrophysics Data System (ADS)

Mesli, A.; Dobaczewski, L.; Nielsen, K. Bonde; Kolkovsky, Vl.; Petersen, M. Christian; Larsen, A. Nylandsted

2008-10-01

The electronic properties of defects resulting from electron irradiation of germanium at low temperatures have been investigated. The recent success in preparing n+p junctions on germanium has opened a new opportunity to address fundamental questions regarding point defects and their related energy levels by allowing an access to the lower half of the band gap. In this work we apply various space-charge capacitance-transient spectroscopy techniques connected on line with the electron-beam facility. In n -type germanium we identify a level at about 0.14 eV below the conduction band whose properties resemble in many respects those of a defect assigned previously to the close vacancy-interstitial or Frenkel pair. This pair seems to annihilate over a small barrier at about 70 K, and its stability is particularly sensitive to the irradiation temperature and energy. We also observe two coupled levels at 0.08 and 0.24 eV below the conduction band stable up to 160 K. Recent independent theoretical work has predicted the existence of the single and double donor of the germanium interstitial with energy levels matching exactly these two values. Given these identifications hold, they mark a major difference with silicon where both the Frenkel pair and self-interstitial have never been caught. In p -type germanium, two levels were found. The shallower one, located at about 0.14 eV above the valence band, is tentatively assigned to the vacancy. It exhibits a field-driven instability at about 80 K making its analysis quite difficult. The application of a reverse bias, required by the space-charge spectroscopy, leads to a strong drift process sweeping this defect out of the observation area without necessarily provoking its annealing. Unlike silicon, in which the vacancy has four charge states, only one vacancy-related level seems to exist in germanium and this level is very likely a double acceptor. Finally, a very peculiar observation is made on a hole midgap trap, which, in many respects, behaves as the boron interstitial in silicon. This has led us to suggest that it may stem from the gallium interstitial, a natural dopant of our germanium materials, whose presence would be the fingerprint of the Watkins replacement mechanism in germanium.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Hydrothermal germanium over the southern East pacific rise.

PubMed

Mortlock, R A; Froelich, P N

1986-01-03

Germanium enrichment in the oceanic water column above the southern axis of the East Pacific Rise results from hydrothermal solutions emanating from hot springs along the rise crest. This plume signature provides a new oceanic tracer of reactions between seawater and sea floor basalts during hydrothermal alteration. In contrast to the sharp plumes of (3)He and manganese, the germanium plume is broad and diffuse, suggesting the existence of pervasive venting of low-temperature solutions off the ridge axis.

Near-infrared emission from mesoporous crystalline germanium

NASA Astrophysics Data System (ADS)

Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

2014-10-01

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

The germination of germanium

NASA Astrophysics Data System (ADS)

Burdette, Shawn C.; Thornton, Brett F.

2018-02-01

Shawn C. Burdette and Brett F. Thornton explore how germanium developed from a missing element in Mendeleev's periodic table to an enabler for the information age, while retaining a nomenclature oddity.

Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

PubMed

Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

2017-12-01

Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

2014-12-21

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

PubMed

Qin, Jinwen; Cao, Minhua

2016-04-20

Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

Thermodynamics of Alloys: Studies of Nickel-Gallium, Nickel-Germanium and Nickel-Rhodium Alloys.

DTIC Science & Technology

NICKEL ALLOYS, *GALLIUM ALLOYS, *GERMANIUM ALLOYS, * RHODIUM ALLOYS, *PHASE STUDIES, THERMODYNAMICS, INTERMETALLIC COMPOUNDS, FREE ENERGY, ENTROPY, HEAT OF FORMATION, CRYSTAL STRUCTURE, UNITED KINGDOM.

Cosmogenic activation of germanium used for tonne-scale rare event search experiments

NASA Astrophysics Data System (ADS)

Wei, W.-Z.; Mei, D.-M.; Zhang, C.

2017-11-01

We report a comprehensive study of cosmogenic activation of germanium used for tonne-scale rare event search experiments. The germanium exposure to cosmic rays on the Earth's surface are simulated with and without a shielding container using Geant4 for a given cosmic muon, neutron, and proton energy spectrum. The production rates of various radioactive isotopes are obtained for different sources separately. We find that fast neutron induced interactions dominate the production rate of cosmogenic activation. Geant4-based simulation results are compared with the calculation of ACTIVIA and the available experimental data. A reasonable agreement between Geant4 simulations and several experimental data sets is presented. We predict that cosmogenic activation of germanium can set limits to the sensitivity of the next generation of tonne-scale experiments.

Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

DOE PAGES

Aguayo, E.; Amman, M.; Avignone, F. T.; ...

2012-11-09

A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Furthermore, experiments that operate germanium detectors with a verymore » low energy threshold may benefit from the methods presented herein.« less

Modeling of dislocation dynamics in germanium Czochralski growth

NASA Astrophysics Data System (ADS)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

DFT investigations of hydrogen storage materials

NASA Astrophysics Data System (ADS)

Wang, Gang

Hydrogen serves as a promising new energy source having no pollution and abundant on earth. However the most difficult problem of applying hydrogen is to store it effectively and safely, which is smartly resolved by attempting to keep hydrogen in some metal hydrides to reach a high hydrogen density in a safe way. There are several promising metal hydrides, the thermodynamic and chemical properties of which are to be investigated in this dissertation. Sodium alanate (NaAlH4) is one of the promising metal hydrides with high hydrogen storage capacity around 7.4 wt. % and relatively low decomposition temperature of around 100 °C with proper catalyst. Sodium hydride is a product of the decomposition of NaAlH4 that may affect the dynamics of NaAlH4. The two materials with oxygen contamination such as OH- may influence the kinetics of the dehydriding/rehydriding processes. Thus the solid solubility of OH - groups (NaOH) in NaAlH4 and NaH is studied theoretically by DFT calculations. Magnesium boride [Mg(BH4)2] is has higher hydrogen capacity about 14.9 wt. % and the decomposition temparture of around 250 °C. However one flaw restraining its application is that some polyboron compounds like MgB12H12 preventing from further release of hydrogen. Adding some transition metals that form magnesium transition metal ternary borohydride [MgaTMb(BH4)c] may simply the decomposition process to release hydrogen with ternary borides (MgaTMbBc). The search for the probable ternary borides and the corresponding pseudo phase diagrams as well as the decomposition thermodynamics are performed using DFT calculations and GCLP method to present some possible candidates.

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE PAGES

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young; ...

2016-01-26

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Metal-Rich Transition Metal Diborides as Electrocatalysts for Hydrogen Evolution Reactions in a Wide Range of pH

DOE PAGES

Sitler, Steven J.; Raja, Krishnan S.; Charit, Indrajit

2016-09-23

Solid solutions of HfB 2-ZrB 2 mixtures were prepared by high-energy ball milling of diboride and additive powders followed by spark plasma sintering (SPS). A mixture of stoichiometric 1:1 HfB 2-ZrB 2 borides was the base composition to which Hf, Zr, Ta, LaB 6 or Gd 2O 3 was added. Hf, Zr and Ta were added in order to bring the boron-to-metal ratio down to 1.86, rendering the boride as MeB 1.86. In the case of LaB 6 and Gd 2O 3, 1.8 mol% was added. Electroanalytical behavior of hydrogen evolution reactions was evaluated in 1 M H 2SO 4more » and 1 M NaOH solutions. The LaB 6 additive material showed Tafel slopes of 125 and 90 mV/decade in acidic and alkaline solutions respectively. The Hf and Zr rich samples showed Tafel slopes of about 120 mV/decade in both electrolytes. The over potentials of hydrogen evolution reactions (at 10 mA/cm 2) in the alkaline solution were about 100 mV lower than those in acidic solution. The metal-rich diborides and addition of LaB 6 showed better hydrogen evolution reaction (HER) activities than the base 1:1 HfB 2-ZrB 2 stoichiometric diboride solid solution. Furthermore, the higher activity of metal-rich borides could be attributed to the increased electron population at the d-orbitals of the metal shown by band structure modeling calculations using the Density Functional Theory approach.« less

Thermal properties of zirconium diboride -- transition metal boride solid solutions

NASA Astrophysics Data System (ADS)

McClane, Devon Lee

This research focuses on the thermal properties of zirconium diboride (ZrB2) based ceramics. The overall goal was to improve the understanding of how different transition metal (TM) additives influence thermal transport in ZrB2. To achieve this, ZrB2 with 0.5 wt% carbon, and 3 mol% of individual transition metal borides, was densified by hot-press sintering. The transition metals that were investigated were: Y, Ti, Hf, V, Nb, Ta, Cr, Mo, W, and Re. The room temperature thermal diffusivities of the compositions ranged from 0.331 cm2/s for nominally pure ZrB2 to 0.105 cm2/s for (Zr,Cr)B2 and converged around 0.155cm2/s at higher temperatures for all compositions. Thermal conductivities were calculated from the diffusivities, using temperature-dependent values for density and heat capacity. The electron contribution to thermal conductivity was calculated from measured electrical resistivity according to the Wiedemann-Franz law. The phonon contribution to thermal conductivity was calculated by subtracting the electron contribution from the total thermal conductivity. Rietveld refinement of x-ray diffraction data was used to determine the lattice parameters of the compositions. The decrease in thermal conductivity for individual additives correlated directly to the metallic radius of the additive. Additional strain appeared to exist for additives when the stable TM boride for that metal had different crystal symmetries than ZrB2. This research provided insight into how additives and impurities affect thermal transport in ZrB2. The research potentially offers a basis for future modeling of thermal conductivity in ultra-high temperature ceramics based on the correlation between metallic radius and the decrease in thermal conductivity.

Boride Formation Induced by pcBN Tool Wear in Friction-Stir-Welded Stainless Steels

NASA Astrophysics Data System (ADS)

Park, Seung Hwan C.; Sato, Yutaka S.; Kokawa, Hiroyuki; Okamoto, Kazutaka; Hirano, Satoshi; Inagaki, Masahisa

2009-03-01

The wear of polycrystalline cubic boron nitride (pcBN) tool and its effect on second phase formation were investigated in stainless steel friction-stir (FS) welds. The nitrogen content and the flow stress were analyzed in these welds to examine pcBN tool wear. The nitrogen content in stir zone (SZ) was found to be higher in the austenitic stainless steel FS welds than in the ferritic and duplex stainless steel welds. The flow stress of austenitic stainless steels was almost 1.5 times larger than that of ferritic and duplex stainless steels. These results suggest that the higher flow stress causes the severe tool wear in austenitic stainless steels, which results in greater nitrogen pickup in austenitic stainless steel FS welds. From the microstructural observation, a possibility was suggested that Cr-rich borides with a crystallographic structure of Cr2B and Cr5B3 formed through the reaction between the increased boron and nitrogen and the matrix during FS welding (FSW).

Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

DOEpatents

Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

2003-09-23

Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

Ultra High Temperature Ceramics' Processing Routes and Microstructures Compared

NASA Technical Reports Server (NTRS)

Gusman, Michael; Stackpoole, Mairead; Johnson, Sylvia; Gasch, Matt; Lau, Kai-Hung; Sanjurjo, Angel

2009-01-01

Ultra High Temperature Ceramics (UHTCs), such as HfB2 and ZrB2 composites containing SiC, are known to have good thermal shock resistance and high thermal conductivity at elevated temperatures. These UHTCs have been proposed for a number of structural applications in hypersonic vehicles, nozzles, and sharp leading edges. NASA Ames is working on controlling UHTC properties (especially, mechanical properties, thermal conductivity, and oxidation resistance) through processing, composition, and microstructure. In addition to using traditional methods of combining additives to boride powders, we are preparing UHTCs using coat ing powders to produce both borides and additives. These coatings and additions to the powders are used to manipulate and control grain-boundary composition and second- and third-phase variations within the UHTCs. Controlling the composition of high temperature oxidation by-products is also an important consideration. The powders are consolidated by hot-pressing or field-assisted sintering (FAS). Comparisons of microstructures and hardness data will be presented.

A superconducting battery material: Lithium gold boride (LiAu3B)

NASA Astrophysics Data System (ADS)

Aydin, Sezgin; Şimşek, Mehmet

2018-04-01

The superconducting and potential cathode material properties of ternary boride of LiAu3B have been investigated by density functional first principles. The Li-concentration effects on the actual electronic and structural properties, namely the properties of LixAu9B3 (x = 0, 1, 2) sub-systems are studied. It is remarkably shown that the existence of Li-atoms has no considerable effect on the structural properties of Au-B skeleton in LiAu3B. Then, it can be offered as a potential cathode material for Li-ion batteries with the very small volume deviation of 0.42%, and the suitable average open circuit voltage of ∼1.30 V. Furthermore, the vibrational and superconducting properties such as electron-phonon coupling constant (λ) and critical temperature (Tc) of LiAu3B are studied. The calculated results suggest that LiAu3B should be a superconductor with Tc ∼5.8 K, also.

Germanium: giving microelectronics an efficiency boost

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

Determining orbital particle parameters of impacts into germanium using morphology analysis and calibration data from hypervelocity impact experiments in the laboratory

NASA Technical Reports Server (NTRS)

Paul, Klaus G.

1995-01-01

This paper describes the work that is done at the Lehrstuhl fur Raumfahrttechnik (lrt) at the Technische Universitat Munchen to examine particle impacts into germanium surfaces which were flown on board the LDEF satellite. Besides the description of the processing of the samples, a brief overview of the particle launchers at our institute is given together with descriptions of impact morphology of high- and hypervelocity particles into germanium. Since germanium is a brittle, almost glass-like material, the impact morphology may also be interesting for anyone dealing with materials such as optics and solar cells. The main focus of our investigations is to learn about the impacting particle's properties, for example mass, velocity and direction. This is done by examining the morphology, various geometry parameters, crater obliqueness and crater volume.

Hydrometallurgical recovery of germanium from coal gasification fly ash: pilot plant scale evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arroyo, F.; Fernandez-Pereira, C.; Olivares, J.

2009-04-15

In this article, a hydrometallurgical method for the selective recovery of germanium from fly ash (FA) has been tested at pilot plant scale. The pilot plant flowsheet comprised a first stage of water leaching of FA, and a subsequent selective recovery of the germanium from the leachate by solvent extraction method. The solvent extraction method was based on Ge complexation with catechol in an aqueous solution followed by the extraction of the Ge-catechol complex (Ge(C{sub 6}H{sub 4}O{sub 2}){sub 3}{sup 2-}) with an extracting organic reagent (trioctylamine) diluted in an organic solvent (kerosene), followed by the subsequent stripping of the organicmore » extract. The process has been tested on a FA generated in an integrated gasification with combined cycle (IGCC) process. The paper describes the designed 5 kg/h pilot plant and the tests performed on it. Under the operational conditions tested, approximately 50% of germanium could be recovered from FA after a water extraction at room temperature. Regarding the solvent extraction method, the best operational conditions for obtaining a concentrated germanium-bearing solution practically free of impurities were as follows: extraction time equal to 20 min; aqueous phase/organic phase volumetric ratio equal to 5; stripping with 1 M NaOH, stripping time equal to 30 min, and stripping phase/organic phase volumetric ratio equal to 5. 95% of germanium were recovered from water leachates using those conditions.« less

Alternating gradient photodetector

NASA Technical Reports Server (NTRS)

Overhauser, Albert W. (Inventor); Maserjian, Joseph (Inventor)

1989-01-01

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

PubMed

Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

2009-08-15

In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp; Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871; Asahara, Ryohei

2015-12-21

The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures withmore » the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.« less

Confined in-fiber solidification and structural control of silicon and silicon−germanium microparticles

PubMed Central

Gumennik, Alexander; Levy, Etgar C.; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F.; Joannopoulos, John D.; Fink, Yoel

2017-01-01

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon−germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon−germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices. PMID:28642348

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

[Effects of germanium on cell growth, polysaccharide production and cellular redox status in suspension cultures of protocorm-like bodies of Dendrobium huoshanense].

PubMed

Wei, Ming; Yang, Chaoying; Jiang, Shaotong

2010-03-01

To solve the problem of low growth rate and metabolism level in suspension cultures of protocorm-like bodies (PLBs) of Dendrobium huoshanense. The effects of germanium on PLB proliferation and accumulation of polysaccharides together with nutrient utilization were investigated and the contents of reducing sugars, soluble proteins, the activities of antioxidant enzymes and redox status of the cells of PLB were analyzed. The results indicated that the optimum concentration of germanium dioxide (4.0 mg/L) significantly enhanced the cell growth and accumulation of polysaccharides, greatly improved contents of reducing sugars and soluble proteins, increased the activities of superoxide dismutase (SOD) and catalase (CAT) but decreased the activity of peroxidase(POD). The cell dry weight and production of polysaccharides were 32.6 g/L and 3.78 g/L, respectively. The analysis of cellular redox status showed that the ratio of reduced glutathione (GSH) to oxidized glutathione (GSSG) in cells and the activity of glutathione reductase were significantly increased by the addition of germanium dioxide. The suitable concentration of germanium dioxide was beneficial to the cell growth and the accumulation of polysaccharides.

GeO2 Thin Film Deposition on Graphene Oxide by the Hydrogen Peroxide Route: Evaluation for Lithium-Ion Battery Anode.

PubMed

Medvedev, Alexander G; Mikhaylov, Alexey A; Grishanov, Dmitry A; Yu, Denis Y W; Gun, Jenny; Sladkevich, Sergey; Lev, Ovadia; Prikhodchenko, Petr V

2017-03-15

A peroxogermanate thin film was deposited in high yield at room temperature on graphene oxide (GO) from peroxogermanate sols. The deposition of the peroxo-precursor onto GO and the transformations to amorphous GeO 2 , crystalline tetragonal GeO 2 , and then to cubic elemental germanium were followed by electron microscopy, XRD, and XPS. All of these transformations are influenced by the GO support. The initial deposition is explained in view of the sol composition and the presence of GO, and the different thermal transformations are explained by reactions with the graphene support acting as a reducing agent. As a test case, the evaluation of the different materials as lithium ion battery anodes was carried out revealing that the best performance is obtained by amorphous germanium oxide@GO with >1000 mAh g -1 at 250 mA g -1 (between 0 and 2.5 V vs Li/Li + cathode), despite the fact that the material contained only 51 wt % germanium. This is the first demonstration of the peroxide route to produce peroxogermanate thin films and thereby supported germanium and germanium oxide coatings. The advantages of the process over alternative methodologies are discussed.

The Nature of the Microstructure and Interface Boundary Formation in Directionally Solidified Ceramic Boride Composites

DTIC Science & Technology

2011-05-01

failure resistance, which results from their different microplasticity (microbrittleness) and relaxation ability. In order to evaluate the... microplasticity (microbrittleness) in the series of isomorphic hexaborides produced by zone melting we have plotted a number of statistical curves that show

Ultracapacitor current collector

DOEpatents

Jerabek, Elihu Calfin; Mikkor, Mati

2001-10-16

An ultracapacitor having two solid, nonporous current collectors, two porous electrodes separating the collectors, a porous separator between the electrodes and an electrolyte occupying the pores in the electrodes and separator. At least one of the current collectors comprises a conductive metal substrate coated with a metal nitride, carbide or boride coating.

Acquisition of a High-Resolution High-Intensity X-ray Diffractometer for Research and Education

DTIC Science & Technology

2015-07-20

NAME(S) AND ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 X-ray diffraction; germanium- tin alloys...is in progress for others. Comprehensive data were acquired for pseudomorphic germanium- tin alloys grown on germanium by molecular beam epitaxy...Research  100+  2000  Federal grant  Germanium‐ tin  alloys  Tech transfer  9  180  Startup company  Metallurgy  Research  5  100  Federal grant  SAXS  Total

Regimes of laser-induced periodic surface structure on germanium: radiation remnants and surface plasmons.

PubMed

Young, J F; Sipe, J E; van Driel, H M

1983-08-01

We present experimental evidence showing that the period of the rippled surface structure induced on germanium by 1.06-microm laser pulses undergoes a discontinuous shift above a certain threshold intensity. The measured shift, as a angle of incidence of the damaging beam, is quantitatively interpreted as a transition between a regime of inhomogeneous melting controlled by radiation-remnant field structures and a regime of ripple formation surface plasmons in an optically thick layer of liquid, metallic germanium formed at the surface.

Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

DOEpatents

Haller, Eugene E.; Brundermann, Erik

2000-01-01

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

Germanium and indium

USGS Publications Warehouse

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in southeastern Yunnan Province), and the Dabaoshan SEDEX deposit (located in the Nanling region of China) contain indium-enriched sphalerite. Another major potential source of indium occurs in the polymetallic tin-tungsten belt in the Eastern Cordillera of the Andes Mountains of Bolivia. Deposits there occur as dense arrays of narrow, elongate, indium-enriched tin oxide-polymetallic sulfide veins in volcanic rocks and porphyry stocks.Information about the behavior of germanium and indium in the environment is limited. In surface weathering environments, germanium and indium may dissolve from host minerals and form complexes with chloride, fluoride, hydroxide, organic matter, phosphate, or sulfate compounds. The tendency for germanium and indium to be dissolved and transported largely depends upon the pH and temperature of the weathering solutions. Because both elements are commonly concentrated in sulfide minerals, they can be expected to be relatively mobile in acid mine drainage where oxidative dissolution of sulfide minerals releases metals and sulfuric acid, resulting in acidic pH values that allow higher concentrations of metals to be dissolved into solution.

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

NASA Astrophysics Data System (ADS)

Monmeyran, Corentin; Crowe, Iain F.; Gwilliam, Russell M.; Heidelberger, Christopher; Napolitani, Enrico; Pastor, David; Gandhi, Hemi H.; Mazur, Eric; Michel, Jürgen; Agarwal, Anuradha M.; Kimerling, Lionel C.

2018-04-01

Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.

Crystal growth from the vapor phase experiment MA-085

NASA Technical Reports Server (NTRS)

Wiedemeir, H.; Sadeek, H.; Klaessig, F. C.; Norek, M.

1976-01-01

Three vapor transport experiments on multicomponent systems were performed during the Apollo Soyuz mission to determine the effects of microgravity forces on crystal morphology and mass transport rates. The mixed systems used germanium selenide, tellurium, germanium tetraiodide (transport agent), germanium monosulfide, germanium tetrachloride (transport agent), and argon (inert atmosphere). The materials were enclosed in evacuated sealed ampoules of fused silica and were transported in a temperature gradient of the multipurpose electric furnace onboard the Apollo Soyuz spacecraft. Preliminary evaluation of 2 systems shows improved quality of space grown crystals in terms of growth morphology and bulk perfection. This conclusion is based on a direct comparison of space grown and ground based crystals by means of X-ray diffraction, microscopic, and chemical etching techniques. The observation of greater mass transport rates than predicted for a microgravity environment by existing vapor transport models indicates the existence of nongravity caused transport effects in a reactive solid/gas phase system.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, James W.

1992-01-01

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, J.W.

1992-09-15

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moffatt, Robert

2016-03-01

In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Ourmore » measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.« less

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

DOE PAGES

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

2015-06-04

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstratesmore » an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

Measurement of the quantum conductance of germanium by an electrochemical scanning tunneling microscope break junction based on a jump-to-contact mechanism.

PubMed

Xie, Xufen; Yan, Jiawei; Liang, Jinghong; Li, Jijun; Zhang, Meng; Mao, Bingwei

2013-10-01

We present quantum conductance measurements of germanium by means of an electrochemical scanning tunneling microscope (STM) break junction based on a jump-to-contact mechanism. Germanium nanowires between a platinum/iridium tip and different substrates were constructed to measure the quantum conductance. By applying appropriate potentials to the substrate and the tip, the process of heterogeneous contact and homogeneous breakage was realized. Typical conductance traces exhibit steps at 0.025 and 0.05 G0. The conductance histogram indicates that the conductance of germanium nanowires is located between 0.02 and 0.15 G0 in the low-conductance region and is free from the influence of substrate materials. However, the distribution of conductance plateaus is too discrete to display distinct peaks in the conductance histogram of the high-conductance region. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bottom-up assembly of metallic germanium

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, Lareine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

2015-08-01

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; Cushing, Scott K.; Borja, Lauren J.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (∼30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔEgap,Ge,direct=0.8 eV) and Si0.25Ge0.75 indirect gaps (ΔEgap,Si0.25Ge0.75,indirect=0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution. PMID:28653020

Pressed boride cathodes

NASA Technical Reports Server (NTRS)

Wolski, W.

1985-01-01

Results of experimental studies of emission cathodes made from lanthanum, yttrium, and gadolinium hexaborides are presented. Maximum thermal emission was obtained from lanthanum hexaboride electrodes. The hexaboride cathodes operated stably under conditions of large current density power draw, at high voltages and poor vacuum. A microtron electron gun with a lanthanum hexaboride cathode is described.

Thermophysical and Electronic Properties Information Analysis Center (TEPIAC): A Continuing Systematic Program on Tables of Thermophysical and Electronic Properties of Materials.

DTIC Science & Technology

1977-02-01

oxides and their mixtures, arsenides, borides, bromides , carbides , chlorides , fluoride s, nitride s, phosphides, silicides , sulfides , tellurides...ivity of alkali elements (lithium , sodium , potassium , rubi- dium , ces ium , and francium) and contains recomme nded reference values generated

Molecular Modeling of High-Temperature Oxidation of Refractory Borides

DTIC Science & Technology

2008-02-01

generate the classical potential, we adopt the van Beest , Kramer and van Santen (BKS) parameterization for Si-O interactions, but fit B-O and Si-B...seminar at Department of Aerospace and Mechanical Engineering, University of Notre Dame, March 20, 2007. 6 Los Alamos National Lab Physics & Theoretical

Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

NASA Technical Reports Server (NTRS)

Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

1997-01-01

A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

EVALUATION OF THE IMPACT OF THE DEFENSE WASTE PROCESSING FACILITY (DWPF) LABORATORY GERMANIUM OXIDE USE ON RECYCLE TRANSFERS TO THE H-TANK FARM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jantzen, C.; Laurinat, J.

2011-08-15

When processing High Level Waste (HLW) glass, the Defense Waste Processing Facility (DWPF) cannot wait until the melt or waste glass has been made to assess its acceptability, since by then no further changes to the glass composition and acceptability are possible. Therefore, the acceptability decision is made on the upstream feed stream, rather than on the downstream melt or glass product. This strategy is known as 'feed forward statistical process control.' The DWPF depends on chemical analysis of the feed streams from the Sludge Receipt and Adjustment Tank (SRAT) and the Slurry Mix Evaporator (SME) where the frit plusmore » adjusted sludge from the SRAT are mixed. The SME is the last vessel in which any chemical adjustments or frit additions can be made. Once the analyses of the SME product are deemed acceptable, the SME product is transferred to the Melter Feed Tank (MFT) and onto the melter. The SRAT and SME analyses have been analyzed by the DWPF laboratory using a 'Cold Chemical' method but this dissolution did not adequately dissolve all the elemental components. A new dissolution method which fuses the SRAT or SME product with cesium nitrate (CsNO{sub 3}), germanium (IV) oxide (GeO{sub 2}) and cesium carbonate (Cs{sub 2}CO{sub 3}) into a cesium germanate glass at 1050 C in platinum crucibles has been developed. Once the germanium glass is formed in that fusion, it is readily dissolved by concentrated nitric acid (about 1M) to solubilize all the elements in the SRAT and/or SME product for elemental analysis. When the chemical analyses are completed the acidic cesium-germanate solution is transferred from the DWPF analytic laboratory to the Recycle Collection Tank (RCT) where the pH is increased to {approx}12 M to be released back to the tank farm and the 2H evaporator. Therefore, about 2.5 kg/yr of GeO{sub 2}/year will be diluted into 1.4 million gallons of recycle. This 2.5 kg/yr of GeO{sub 2} may increase to 4 kg/yr when improvements are implemented to attain an annual canister production goal of 400 canisters. Since no Waste Acceptance Criteria (WAC) exists for germanium in the Tank Farm, the Effluent Treatment Project, or the Saltstone Production Facility, DWPF has requested an evaluation of the fate of the germanium in the caustic environment of the RCT, the 2H evaporator, and the tank farm. This report evaluates the effect of the addition of germanium to the tank farm based on: (1) the large dilution of Ge in the RCT and tank farm; (2) the solubility of germanium in caustic solutions (pH 12-13); (3) the potential of germanium to precipitate as germanium sodalites in the 2H Evaporator; and (4) the potential of germanium compounds to precipitate in the evaporator feed tank. This study concludes that the impacts of transferring up to 4 kg/yr germanium to the RCT (and subsequently the 2H evaporator feed tank and the 2H evaporator) results in <2 ppm per year (1.834 mg/L) which is the maximum instantaneous concentration expected from DWPF. This concentration is insignificant as most sodium germanates are soluble at the high pH of the feed tank and evaporator solutions. Even if sodium aluminosilicates form in the 2H evaporator, the Ge will likely substitute for some small amount of the Si in these structures and will be insignificant. It is recommended that the DWPF continue with their strategy to add germanium as a laboratory chemical to Attachment 8.2 of the DWPF Waste Compliance Plan (WCP).« less

Satellite thermal storage systems using metallic phase-change materials

NASA Astrophysics Data System (ADS)

Lauf, R. J.; Hamby, C.

Solar (thermal) dynamic power systems for satellites require a heat storage system capable of operating the engine during eclipse. A system is described in which the phase-change material (PCM) is a metal rather than the more conventional fluoride salts. Thermal storage modules consisting of germanium contained in graphite have good thermal conductivity, low parasitic mass, and are physically and chemically stable. The result is described for thermal cycle testing of graphite capsules containing germanium and several germanium- and silicon-based alloys, as well as some initial tests of the compatibility of graphite with Nb-1 percent Zr structural materials.

Neutron-transmutation-doped germanium bolometers

NASA Technical Reports Server (NTRS)

Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

1983-01-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Multiple-step preparation and physicochemical characterization of crystalline α-germanium hydrogenphosphate

NASA Astrophysics Data System (ADS)

Romano, Ricardo; Ruiz, Ana I.; Alves, Oswaldo L.

2004-04-01

The reaction between germanium oxide and phosphoric acid has previously been described and led to impure germanium hydrogenphosphate samples with low crystallinity. A new multiple-step route involving the same reaction under refluxing and soft hydrothermal conditions is described for the preparation of pure and crystalline α-GeP. The physicochemical characterization of the samples allows accompaniment of the reaction evolution as well as determining short- and long-range structural organization. The phase purity of the α-GeP sample was confirmed by applying Rietveld's profile analysis, which also determined the cell parameters of its crystals.

Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

PubMed Central

Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

2016-01-01

We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

GeSn Based Near and Mid Infrared Heterostructure Detectors

DTIC Science & Technology

2018-02-07

prestigious journals. 15.  SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium- Tin Diode, IR Focal Plane Array...can be achieved by using current developed chemical vapor deposition technique. Optical properties of germanium tin (Ge1-xSnx) alloys have been

Electron tunnelling into amorphous germanium and silicon.

NASA Technical Reports Server (NTRS)

Smith, C. W.; Clark, A. H.

1972-01-01

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Electron beam recrystallization of amorphous semiconductor materials

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.

1968-01-01

Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE PAGES

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; ...

2017-06-06

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Germanium and Tin Based Anode Materials for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Ji, Dongsheng

The discovery of safe anode materials with high energy density for lithium-ion batteries has always been a significant topic. Group IV elements have been under intensive study for their high capability of alloying with lithium. Batteries with graphite and tin based anode material have already been applied in cell phones and vehicles. In order to apply group IV elements, their dramatic volume change during lithiation and delithiation processes is the key point to work on. Reducing the particle size is the most common method to buffer the volume expansion. This strategy has been applied on both germanium and tin based materials. Germanium based anode material has been made by two different synthesis methods. The amorphous Ge-C-Ti composite material was made by ball milling method and performed much better than other germanium alloy including Ge-Mg, Ge-Fe and Ge-Fe.Germanium sphere nano particles with diameter of around 50 nm have been made by solution method. After ball milled with graphite, the resulted product performed stable capacity over 500 mAh˙g-1 for more than 20 cycles. Ball milled graphite in the composite plays an important role of buffering volume change and stabilizing germanium. Sn-Fe alloy is one of the feasible solutions to stabilize tin. Sn 2Fe-C composite has been made by ball milling method. After optimizations of the ratio of precursors, reaction time, milling balls and electrolyte additives, the electrochemistry performance was improved. The anode performed 420 mAh˙ -1 at 1.0 mA/cm2 and maintained its structure after cycling at 2.0 mA/cm2. At 0.3 mA/cm2 cycling rate, the anode performed 978 mAh/cm3 after 500 cycles, which still exceeds the theoretical capacity of graphite.

Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

PubMed

Ng, Rachel Qiao-Ming; Tok, E S; Kang, H Chuan

2009-07-28

At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, Si(x)Ge((1-x)) film growth rate increases with the surface germanium fraction. At high temperatures, however, the molecular mechanisms determining the epitaxial growth rate are not well established despite much experimental work. We investigate these mechanisms in the context of disilane adsorption because disilane is an important precursor used in film growth. In particular, we want to understand the molecular steps that lead, in the high temperature regime, to a decrease in growth rate as the surface germanium increases. In addition, there is a need to consider the issue of whether disilane adsorbs via silicon-silicon bond dissociation or via silicon-hydrogen bond dissociation. It is usually assumed that disilane adsorption occurs via silicon-silicon bond dissociation, but in recent work we provided theoretical evidence that silicon-hydrogen bond dissociation is more important. In order to address these issues, we calculate the chemisorption barriers for disilane on silicon germanium using first-principles density functional theory methods. We use the calculated barriers to estimate film growth rates that are then critically compared to the experimental data. This enables us to establish a connection between the dependence of the film growth rate on the surface germanium content and the kinetics of the initial adsorption step. We show that the generally accepted mechanism where disilane chemisorbs via silicon-silicon bond dissociation is not consistent with the data for film growth kinetics. Silicon-hydrogen bond dissociation paths have to be included in order to give good agreement with the experimental data for high temperature film growth rate.

Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

PubMed

Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

2016-07-01

A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic. Copyright © 2015 Elsevier B.V. All rights reserved.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

NASA Astrophysics Data System (ADS)

Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

2003-03-01

The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

Effect of the microstructure on electrical properties of high-purity germanium

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

Production, characterization and operation of Ge enriched BEGe detectors in GERDA

NASA Astrophysics Data System (ADS)

Agostini, M.; Allardt, M.; Andreotti, E.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; Domula, A.; Egorov, V.; Falkenstein, R.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gotti, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Ioannucci, L.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Misiaszek, M.; Nemchenok, I.; Nisi, S.; O'Shaughnessy, C.; Palioselitis, D.; Pandola, L.; Pelczar, K.; Pessina, G.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schreiner, J.; Schulz, O.; Schütz, A.-K.; Schwingenheuer, B.; Schönert, S.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Strecker, H.; Ur, C. A.; Vanhoefer, L.; Vasenko, A. A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wilsenach, H.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2015-02-01

The GERmanium Detector Array ( Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay () of Ge. Germanium detectors made of material with an enriched Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.

Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

NASA Astrophysics Data System (ADS)

Tengku Kamarul Bahri, T. N. H.; Wagiran, H.; Hussin, R.; Saeed, M. A.; Hossain, I.; Ali, H.

2014-10-01

Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5-4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

NASA Technical Reports Server (NTRS)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Method of Fabricating Schottky Barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1982-01-01

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Bottom-up assembly of metallic germanium.

PubMed

Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

2015-08-10

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Arene-Inserted Extended Germa[n]pericyclynes: Synthesis, Structure, and Phosphorescence Properties.

PubMed

Tanimoto, Hiroki; Mori, Junta; Ito, Shunichiro; Nishiyama, Yasuhiro; Morimoto, Tsumoru; Tanaka, Kazuo; Chujo, Yoshiki; Kakiuchi, Kiyomi

2017-07-26

This report describes the synthesis and characterization of arene-inserted extended (ArEx) germa[n]pericyclynes composed of germanium and 1,4-diethynylbenzene units. These novel cyclic germanium-π unit materials were synthesized with diethynylbenzene and germanium dichloride. X-ray crystallographic analysis revealed their structures, and the planar conformation of ArEx germa[4]pericyclyne along with the regular aromatic rings. UV/Vis absorption spectra and fluorescence emission spectra showed considerably unique and highly improved character compared to previously reported germa[n]pericyclynes. Even in the absence of transition metal components, phosphorescence emissions were observed, and the emission lifetimes were dramatically improved. ArEx germa[n]pericyclynes showed high photoluminescence quantum yields, whereas low photoluminescence quantum yields were observed for acyclic compounds. Density functional theory calculations show delocalized orbitals between skipped alkyne units through a germanium tether, and an increase in the HOMO energy level, leading to a small HOMO-LUMO energy gap. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gallium arsenide single crystal solar cell structure and method of making

NASA Technical Reports Server (NTRS)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

The MAJORANA DEMONSTRATOR: A search for neutrinoless double-beta decay of germanium-76

NASA Astrophysics Data System (ADS)

Schubert, Alexis; Majorana Collaboration

2011-04-01

Observation of neutrinoless double-beta decay (0 νββ) could determine whether the neutrino is a Majorana particle and may provide information on neutrino mass. The MAJORANA Collaboration will search for 0 νββ of 76Ge in an array of germanium detectors enriched to 86% in 76Ge. Germanium detectors are a well-understood technology and have the benefits of excellent energy resolution, a high Q-value, and the ability to act as source and detector. The p-type point contact germanium detectors chosen by the MAJORANA Collaboration provide low noise, low energy threshold, and some ability to distinguish between the signal and background events. MAJORANA is constructing the DEMONSTRATOR, which will be used to conduct research and development toward a tonne-scale Ge experiment. The DEMONSTRATOR will be installed deep underground and will contain 40 kg of Ge deployed in an ultra-low-background shielded environment. Research supported by DOE under contracts DE-AC05-00OR22725 and DE-FG02-97ER41020.

Structure and Stability of GeAu{sub n}, n = 1-10 clusters: A Density Functional Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Priyanka,; Dharamvir, Keya; Sharma, Hitesh

2011-12-12

The structures of Germanium doped gold clusters GeAu{sub n} (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu{sub n} clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu{sub n} clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding siliconmore » doped gold cluster. The HUMO-LOMO gap for Au{sub n}Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.« less

Lithium Borides - High Energy Materials

DTIC Science & Technology

2000-02-28

1993. 99, 7983. (32) Pulay P.; Hamilton. T. P. J. Chem. Phys. 1988, 88. 4926 . (33) Frisch. M. J.: Trucks. G. W.; Schlegel. H. B.: Gill, P. M. W...25] P.V. Sudhakar, K. Lammertsma, J. Chem. Phys. 99 (1993) 7929. [26] M.J. van der Woerd, K. Lammertsma, B.J. Duke, H.F. Schaefer , III, J

Grain Refinement and Texture Mitigation in Low Boron Containing TiAl-Alloys

NASA Astrophysics Data System (ADS)

Hecht, Ulrike; Witusiewicz, Victor T.

2017-12-01

Controlling the grain size and texture of lamellar TiAl-alloys is essential for well-balanced creep and fatigue properties. Excellent refinement and texture mitigation are achieved in aluminum lean alloys by low boron additions of 0.2 at.%. This amount is sufficient to promote in situ formation of ultrafine borides during the last stages of body centered cubic (BCC) solidification. The borides subsequently serve as nucleation sites for hexagonal close packed (HCP) during the BCC-HCP phase transformation. Bridgman solidification experiments with alloy Ti-43Al-8Nb-0.2C-0.2B were performed under a different growth velocity, i.e., cooling rate, to evaluate the HCP grain size distribution and texture. For slow-to-moderate cooling rates, about 65% of HCP grains are randomly oriented, despite the pronounced texture of the parent BCC phase resulting from directional solidification. For high cooling rates, obtained by quenching, texture mitigation is less pronounced. Only 28% of the HCP grains are randomly oriented, the majority being crystallographic variants of the Burgers orientation relationship.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Boronization and Carburization of Superplastic Stainless Steel and Titanium-Based Alloys

PubMed Central

Matsushita, Masafumi

2011-01-01

Bronization and carburization of fine-grain superplastic stainless steel is reviewed, and new experimental results for fine grain Ti88.5Al4.5V3Fe2Mo2 are reported. In superplastic duplex stainless steel, the diffusion of carbon and boron is faster than in non-superplastic duplex stainless steel. Further, diffusion is activated by uniaxial compressive stress. Moreover, non-superplastic duplex stainless steel shows typical grain boundary diffusion; however, inner grain diffusion is confirmed in superplastic stainless steel. The presence of Fe and Cr carbides or borides is confirmed by X-ray diffraction, which indicates that the diffused carbon and boron react with the Fe and Cr in superplastic stainless steel. The Vickers hardness of the carburized and boronized layers is similar to that achieved with other surface treatments such as electro-deposition. Diffusion of boron into the superplastic Ti88.5Al4.5V3Fe2Mo2 alloy was investigated. The hardness of the surface exposed to boron powder can be increased by annealing above the superplastic temperature. However, the Vickers hardness is lower than that of Ti boride. PMID:28824144

Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form.

PubMed

Flynn, G; Stokes, K; Ryan, K M

2018-05-31

Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices.

PubMed

Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar; Cong, Longqing; Kumar, Abhishek; MacDonald, Kevin F; Singh, Ranjan

2018-03-01

Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light-matter interactions within the semiconductor. Here, a germanium-thin-film-based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub-picosecond decay constant of 670 fs is attributed to the presence of trap-assisted recombination sites in the thermally evaporated germanium film. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium.

DTIC Science & Technology

1986-09-30

choice or a process for growing Ge N , layers on germa - nium. a number of workers have employed various de. mum. posited layers on germanium. While...N00014-84-K-0459 V6 Office of Naval Research (Mr. Max N . Yoder, Electronic Division) 4: 800 North Quincy Street Arlington, Virginia 22217 Interfacial...z4) 3 Co0 C14 CM- Lfl n X sj E 𔃺 01 N S) Li (m* m n1 Ln m CU OT X)-(, (L 0IX) D/13si E- 1 0n CtZ) 4-4C ~ IN I- I L L0tX Cd) JN N in - Growth of

Refractive index profiles of Ge-doped optical fibers with nanometer spatial resolution using atomic force microscopy.

PubMed

Pace, P; Huntington, Shane; Lyytikäinen, K; Roberts, A; Love, J

2004-04-05

We show a quantitative connection between Refractive Index Profiles (RIP) and measurements made by an Atomic Force Microscope (AFM). Germanium doped fibers were chemically etched in hydrofluoric acid solution (HF) and the wet etching characteristics of germanium were studied using an AFM. The AFM profiles were compared to both a concentration profile of the preform determined using a Scanning Electron Microscope (SEM) and a RIP of the fiber measured using a commercial profiling instrument, and were found to be in excellent agreement. It is now possible to calculate the RIP of a germanium doped fiber directly from an AFM profile.

Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

NASA Astrophysics Data System (ADS)

Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

2016-09-01

We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

Technical, analytical and computer support

NASA Technical Reports Server (NTRS)

1972-01-01

The development of a rigorous mathematical model for the design and performance analysis of cylindrical silicon-germanium thermoelectric generators is reported that consists of two parts, a steady-state (static) and a transient (dynamic) part. The material study task involves the definition and implementation of a material study that aims to experimentally characterize the long term behavior of the thermoelectric properties of silicon-germanium alloys as a function of temperature. Analytical and experimental efforts are aimed at the determination of the sublimation characteristics of silicon germanium alloys and the study of sublimation effects on RTG performance. Studies are also performed on a variety of specific topics on thermoelectric energy conversion.

Multifunctional ligand for use as a diagnostic or therapeutic pharmaceutical

DOEpatents

Katti, Kattesh V.; Volkert, Wynn A.; Ketring, Alan R.; Singh, Prahlad R.

1996-01-01

A compound and method of making a compound for use as a diagnostic or therapeutic pharmaceutical comprises either a phosphorous or germanium core and at least two hydrazine groups forming a ligand for bonding to a metal extending from the phosphorous or germanium core.

[Studies on the role of silicic acid in the development of higher plants].

PubMed

Werner, D

1967-03-01

Germanium acid, a specific inhibitor of the silicic acid metabolism in diatoms, inhibits the growth of Sinapis alba, Lemna minor, Wolffia arrhiza, Nicotiana tabacum, Tradescantia spec, Zinnia elegans, and Secale cereale when applied in the same concentrations as those used in the case of diatoms (15-75 μg GeO2/ml medium). The growth of Aspergillus niger, Phycomyces blakesleanus, Escherichia coli K 12, Euglena gracilis and Pandorina morum is not influenced by these and higher concentrations of Germanium acid. By application of high concentrations of silicic acid, the growth inhibition produced by germanium acid in Lemna minor is partially reduced. Plants of Lemna minor which have been inhibited by germanium acid are essentially smaller than plants grown in a normal medium; their chlorophyll content is significantly decreased. The growth of the roots in Lemna is particularly inhibited. Isolated growing roots of Lycopersicon pimpinellifolium MILL. are inhibited by small concentrations of Ge(OH)4 (ca. 1,5×10(-4) M/l). In contrast to the growth of older plants, the germination of Secale cereale and Sinapis alba is not influenced by Ge(OH)4. The effects of germanium acid are discussed in relation to the physiological role of silicic acid. The results suggest that the element silicon, in the form of silicic acid, is generally essential for the normal development of higher plants.

Growth Behavior and Electronic Structure of Noble Metal-Doped Germanium Clusters.

PubMed

Mahtout, Sofiane; Siouani, Chaouki; Rabilloud, Franck

2018-01-18

Structures, energetics, and electronic properties of noble metal-doped germanium (MGe n with M = Cu, Ag, Au; n = 1-19) clusters are systematically investigated by using the density functional theory (DFT) approach. The endohedral structures in which the metal atom is encapsulated inside of a germanium cage appear at n = 10 when the dopant is Cu and n = 12 for M = Ag and Au. While Cu doping enhances the stability of the corresponding germanium frame, the binding energies of AgGe n and AuGe n are always lower than those of pure germanium clusters. Our results highlight the great stability of the CuGe 10 cluster in a D 4d structure and, to a lesser extent, that of AgGe 15 and AuGe 15 , which exhibits a hollow cage-like geometry. The sphere-type geometries obtained for n = 10-15 present a peculiar electronic structure in which the valence electrons of the noble metal and Ge atoms are delocalized and exhibit a shell structure associated with the quasi-spherical geometry. It is found that the coinage metal is able to give both s- and d-type electrons to be reorganized together with the valence electrons of Ge atoms through a pooling of electrons. The cluster size dependence of the stability, the frontier orbital energy gap, the vertical ionization potentials, and electron affinities are given.

Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

NASA Astrophysics Data System (ADS)

Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

2017-12-01

Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

PubMed

Sologub, Oksana; Salamakha, Leonid; Rogl, Peter; Stöger, Berthold; Bauer, Ernst; Bernardi, Johannes; Giester, Gerald; Waas, Monika; Svagera, Robert

2015-11-16

On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, β = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge-connected boron-filled [Pt6] trigonal prisms running infinitely along the z axis and embedding the icosahedrally coordinated Cu atom. Pt2B, (Pt1-yCuy)2B (y = 0.045), and Pt12CuB6-y (y = 3) behave metallically, as revealed by temperature-dependent electrical resistivity measurements.

Active noise canceling system for mechanically cooled germanium radiation detectors

DOEpatents

Nelson, Karl Einar; Burks, Morgan T

2014-04-22

A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

40 CFR 421.183 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2010 CFR

2010-07-01

... and Secondary Germanium and Gallium Subcategory § 421.183 Effluent limitations guidelines representing... liquor. BAT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or... and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly...

40 CFR 421.183 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2012 CFR

2012-07-01

... and Secondary Germanium and Gallium Subcategory § 421.183 Effluent limitations guidelines representing... liquor. BAT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or... and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly...

40 CFR 421.183 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2013 CFR

2013-07-01

... and Secondary Germanium and Gallium Subcategory § 421.183 Effluent limitations guidelines representing... liquor. BAT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or... and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly...

40 CFR 421.183 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2014 CFR

2014-07-01

... and Secondary Germanium and Gallium Subcategory § 421.183 Effluent limitations guidelines representing... liquor. BAT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or... and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly...

40 CFR 421.183 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2011 CFR

2011-07-01

... and Secondary Germanium and Gallium Subcategory § 421.183 Effluent limitations guidelines representing... liquor. BAT Limitations for the Primary and Secondary Germanium and Gallium Subcategory Pollutant or... and Gallium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly...

Multifunctional ligand for use as a diagnostic or therapeutic pharmaceutical

DOEpatents

Katti, K.V.; Volkert, W.A.; Ketring, A.R.; Singh, P.R.

1996-05-14

A compound and method of making a compound for use as a diagnostic or therapeutic pharmaceutical are revealed. The ligand comprises either a phosphorous or germanium core and at least two hydrazine groups forming a ligand for bonding to a metal extending from the phosphorous or germanium core.

Germanium soup

NASA Astrophysics Data System (ADS)

Palmer, Troy A.; Alexay, Christopher C.

2006-05-01

This paper addresses the variety and impact of dispersive model variations for infrared materials and, in particular, the level to which certain optical designs are affected by this potential variation in germanium. This work offers a method for anticipating and/or minimizing the pitfalls such potential model variations may have on a candidate optical design.

Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

PubMed

Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

2015-05-06

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

Removal of the long-lived {sup 222}Rn daughters from steel and germanium surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojcik, Marcin; Zuzel, Grzegorz; Majorovits, Bela

Removal of the long-lived {sup 222}Rn daughters ({sup 210}Pb, {sup 210}Bi and {sup 210}Po) from stainless steel and germanium surfaces was investigated. As cleaning technique etching was applied to samples in a form of discs exposed earlier to a strong radon source. Reduction of the {sup 210}Pb activity was tested using a HPGe spectrometer, for {sup 210}Bi a beta spectrometer and for {sup 210}Po an alpha spectrometer was used. According to the conducted measurements all the isotopes were removed very efficiently from germanium. Results obtained for stainless steel were worse but still better than those achieved for copper.

A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications

NASA Astrophysics Data System (ADS)

Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng

2018-02-01

A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

NASA Astrophysics Data System (ADS)

Hasanah, L.; Suhendi, E.; Khairrurijal

2018-05-01

Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

Synthesis and photoluminescence of ultra-pure germanium nanoparticles

NASA Astrophysics Data System (ADS)

Chivas, R.; Yerci, S.; Li, R.; Dal Negro, L.; Morse, T. F.

2011-09-01

We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core-shell configuration with highly crystalline core material. Powder X-ray diffraction measurements verify the presence of highly pure, nano-scale germanium with average crystallite size of 30 nm and micro-strain of 0.058%. X-ray photoelectron spectroscopy demonstrates that GeO x ( x ⩽ 2) shells cover the surfaces of the nanoparticles. Under optical excitation, these nanoparticles exhibit two separate emission bands at room temperature: a visible emission at 500 nm with 0.5-1 ns decay times and an intense near-infrared emission at 1575 nm with up to ˜20 μs lifetime.

High temperature material interactions of thermoelectric systems using silicon germanium.

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1973-01-01

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Activity measurements of 55Fe by two different methods

NASA Astrophysics Data System (ADS)

da Cruz, Paulo A. L.; Iwahara, Akira; da Silva, Carlos J.; Poledna, Roberto; Loureiro, Jamir S.; da Silva, Monica A. L.; Ruzzarin, Anelise

2018-03-01

A calibrated germanium detector and CIEMAT/NIST liquid scintillation method were used in the standardization of solution of 55Fe coming from a key-comparison BIPM. Commercial cocktails were used in source preparation for activity measurements in CIEMAT/NIST method. Measurements were performed in Liquid Scintillation Counter. In the germanium counting method standard point sources were prepared for obtaining atomic number versus efficiency curve of the detector in order to obtain the efficiency of 5.9 keV KX-ray of 55Fe by interpolation. The activity concentrations obtained were 508.17 ± 3.56 and 509.95 ± 16.20 kBq/g for CIEMAT/NIST and germanium methods, respectively.

Single-Crystal Germanium Core Optoelectronic Fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xiaoyu; Page, Ryan L.; Chaudhuri, Subhasis

Synthesis and fabrication of high-quality, small-core single-crystal germanium fibers that are photosensitive at the near-infrared and have low optical losses ≈1 dB cm-1 at 2 μm are reported. These fibers have potential applications in fiber-based spectroscopic imaging, nonlinear optical devices, and photodetection at the telecommunication wavelengths.

Temperature-Dependent Compensation and Optical Quenching by Thermal Oxygen Donors in Germanium

NASA Technical Reports Server (NTRS)

Watson, D.; Guptill, M.; Huffman, J.; Krabach, T.; Raines, S.

1994-01-01

Photothermal ionization spectroscopy of germanium, doped in the impurity-band conduction range with gallium acceptors and with thermal oxygen donors, reveals that the donors and acceptors compensate each other at temperatures higher than about 5K, but that the impurities coexist as neutral donors and acceptors at lower temperatures.

Hall Effect Spintronics

DTIC Science & Technology

2014-01-01

ferromagnetic films with perpendicular anisotropy were examined, and finally, the magnetoresistance and Hall effect in Manganese- doped Germanium was...interest in ferromagnetic semiconductors. Germanium doped with Mn is particularly interesting Distribution A: Approved for public release...unavoidable, and doped films are strongly inhomogeneous with GexMny, metallic precipitates coexisting with Mn-rich regions and Mn dilute matrix

A Modified Monte Carlo Method for Carrier Transport in Germanium, Free of Isotropic Rates

NASA Astrophysics Data System (ADS)

Sundqvist, Kyle

2010-03-01

We present a new method for carrier transport simulation, relevant for high-purity germanium < 100 > at a temperature of 40 mK. In this system, the scattering of electrons and holes is dominated by spontaneous phonon emission. Free carriers are always out of equilibrium with the lattice. We must also properly account for directional effects due to band structure, but there are many cautions in the literature about treating germanium in particular. These objections arise because the germanium electron system is anisotropic to an extreme degree, while standard Monte Carlo algorithms maintain a reliance on isotropic, integrated rates. We re-examine Fermi's Golden Rule to produce a Monte Carlo method free of isotropic rates. Traditional Monte Carlo codes implement particle scattering based on an isotropically averaged rate, followed by a separate selection of the particle's final state via a momentum-dependent probability. In our method, the kernel of Fermi's Golden Rule produces analytical, bivariate rates which allow for the simultaneous choice of scatter and final state selection. Energy and momentum are automatically conserved. We compare our results to experimental data.

Structural Design Parameters for Germanium

NASA Technical Reports Server (NTRS)

Salem, Jon; Rogers, Richard; Baker, Eric

2017-01-01

The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

PubMed Central

Chaabane, Ibtihel; Banerjee, Debika; Touayar, Oualid; Cloutier, Sylvain G.

2017-01-01

Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface. PMID:28773215

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Ultra-low energy photoreceivers for optical interconnects

NASA Astrophysics Data System (ADS)

Going, Ryan Wayne

Optical interconnects are increasingly important for our communication and data center systems, and are forecasted to be an essential component of future computers. In order to meet these future demands, optical interconnects must be improved to consume less power than they do today. To do this, both more efficient transmitters and more sensitive receivers must be developed. This work addresses the latter, focusing on device level improvements to tightly couple a low capacitance photodiode with the first stage transistor of the receiver as a single phototransistor device. First I motivate the need for a coupled phototransistor using a simple circuit model which shows how receiver sensitivity is determined by photodiode capacitance and the length of wire connecting it to the first transistor in a receiver amplifier. Then I describe our use of the unique rapid melt growth technique, which is used to integrate crystalline germanium on silicon photonics substrates without an epitaxial reactor. The resulting material quality is demonstrated with high quality (0.95 A/W, 40+ GHz) germanium photodiodes on silicon waveguides. Next I describe two germanium phototransistors I have developed. One is a germanium- gated MOSFET on silicon photonics which has up to 18 A/W gate-controlled responsivity at 1550 nm. Simulations show how MOSFET scaling rules can be easily applied to increase both speed and sensitivity. The second is a floating base germanium bipolar phototransistor on silicon photonics with a 15 GHz gain x bandwidth product. The photoBJT also has a clear scaling path, and it is proposed to create a separate gain and absorption region photoBJT to realize the maximum benefit of scaling the BJT without negatively affecting its absorption and photocarrier collection. Following this design a 120 GHz gain x bandwidth photoBJT is simulated. Finally I present a metal-cavity, which can have over 50% quantum efficiency absorption in sub-100 aF germanium photodiodes, which addresses the issue of absorption in photodiodes which have been scaled to near sub-wavelength dimensions.

Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

NASA Astrophysics Data System (ADS)

Roederer, Ian U.

2012-09-01

The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 <= [Fe/H] <= -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios remain roughly constant. These data do not directly indicate the origin of germanium, arsenic, and selenium at low metallicity, but they suggest that the weak and main components of the s-process are not likely sources. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from the data archive at the Space Telescope Science Institute. STScI is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This research made use of StarCAT, hosted by the Mikulski Archive at the Space Telescope Science Institute (MAST). These data are associated with Programs GO-7348, GO-7433, GO-8197, GO-9048, GO-9455, and GO-9804.Based on data obtained from the European Southern Observatory (ESO) Science Archive Facility. These data are associated with Programs 67.D-0439(A), 074.C-0364(A), 076.B-0055(A), and 080.D-0347(A).This research has made use of the Keck Observatory Archive (KOA), which is operated by the W.M. Keck Observatory and the NASA Exoplanet Science Institute (NExScI), under contract with the National Aeronautics and Space Administration. These data are associated with Programs H2aH, H6aH, and H39aH (PI: Boesgaard), N01H (PI: Latham), and U11H (PI: Prochaska).This paper includes data taken at The McDonald Observatory of The University of Texas at Austin.

SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation

NASA Astrophysics Data System (ADS)

Anthony, R.; Haddara, Y. M.; Crowe, I. F.; Knights, A. P.

2017-08-01

Germanium condensation is demonstrated using a two-step wet oxidation of germanium implanted Silicon-On-Insulator (SOI). Samples of 220 nm thick SOI are implanted with a nominal fluence of 5 × 1016 cm-2 Ge+ at an energy of 33 keV. Primary post-implantation wet oxidation is performed initially at 870 °C for 70 min, with the aim of capping the sample without causing significant dose loss via Ge evaporation through the sample surface. This is followed by a secondary higher temperature wet oxidation at either 900 °C, 1000 °C, or 1080 °C. The germanium retained dose and concentration profile, and the oxide thickness is examined after primary oxidation, and various secondary oxidation times, using Rutherford backscattering analysis. A mixed SiGe oxide is observed to form during the primary oxidation followed by a pure silicon oxide after higher temperature secondary oxidation. The peak germanium concentration, which varies with secondary oxidation condition, is found to range from 43 at. % to 95 at. %, while the FWHM of the Ge profile varies from 13 to 5 nm, respectively. It is also observed that both the diffusion of germanium and the rate of oxidation are enhanced at 870 and 900 °C compared to equilibrium expectations. Transmission electron microscopy of a representative sample with secondary oxidation at 1080 °C for 20 min shows that the SiGe layer is crystalline in nature and seeded from the underlying silicon. Raman spectroscopy is used to determine residual strain in the SiGe region following secondary oxidation. The strain is compressive in nature and increases with Ge concentration to a maximum of approximately 1% in the samples probed. In order to elucidate the physical mechanisms, which govern the implantation-condensation process, we fit the experimental profiles of the samples with a model that uses a modified segregation boundary condition; a modified linear rate constant for the oxidation; and an enhanced diffusion coefficient of germanium where the enhancement is inversely proportional to the temperature and decays with increasing time. Comparison of the modeled and experimental results shows reasonable agreement and allows conclusions to be made regarding the dominant physical mechanisms, despite the semi-empirical nature of the model used.

Bioavailable concentrations of germanium and rare earth elements in soil as affected by low molecular weight organic acids and root exudates

NASA Astrophysics Data System (ADS)

Wiche, Oliver; Székely, Balázs; Kummer, Nicolai-Alexeji; Heinemann, Ute; Tesch, Silke; Heilmeier, Hermann

2014-05-01

Availability of elements in soil to plant is generally dependent on the solubility and mobility of elements in soil solution which is controlled by soil, elemental properties and plant-soil interactions. Low molecular organic acids or other root exudates may increase mobility and availability of certain elements for plants as an effect of lowering pH in the rhizosphere and complexation. However, these processes take place in a larger volume in soil, therefore to understand their nature, it is also important to know in which layers of the soil what factors modify these processes. In this work the influence of citric acid and root exudates of white lupin (Lupinus albus L.) on bioavailable concentrations of germanium, lanthan, neodymium, gadolinium and erbium in soil solution and uptake in root and shoot of rape (Brassica napus L.), comfrey (Symphytum officinale L.), common millet (Panicum milliaceum L.) and oat (Avena sativa L.) was investigated. Two different pot experiments were conducted: (1) the mentioned plant species were treated with nutrient solutions containing various amount of citric acid; (2) white lupin was cultivated in mixed culture (0 % lupin, 33 % lupin) with oat (Avena sativa L.) and soil solution was obtained by plastic suction cups placed at various depths. As a result, addition of citric acid significantly increased germanium concentrations in plant tissue of comfrey and rape and increased translocation of germanium, lanthan, neodymium, gadolinium and erbium from root to shoot. The cultivation of white lupin in mixed culture with oat led to significantly higher concentrations of germanium and increasing concentrations of lanthan, neodymium, gadolinium and erbium in soil solution and aboveground plant tissue. In these pots concentrations of citric acid in soil solution were significantly higher than in the control. The results show, that low molecular organic acids exuded by plant roots are of great importance for the mobilization of germanium, lanthan, neodymium, gadolinium and erbium in the rhizosphere and therefore the enhancement of bioavailability of the mentioned elements to plants. Based on the suction cup experiment we conclude that in vertical soil profile the bioavailable germanium is heavily affected by the activity of exudates, as the complexation processes of germanium take place at the root zone and below affected by the interplay of the infiltration of citric acid solutions and the actually produced exudates. These studies have been carried out in the framework of the PhytoGerm project, financed by the Federal Ministry of Education and Research, Germany. BS contributed as an Alexander von Humboldt Research Fellow. The authors are grateful to students and laboratory assistants contributing in the field work and sample preparation.

Bridgman Growth of Germanium

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Volz, M. P.; Cobb, S. D.; Motakef, S.

1997-01-01

The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.

Alloys of clathrate allotropes for rechargeable batteries

DOEpatents

Chan, Candace K; Miller, Michael A; Chan, Kwai S

2014-12-09

The present disclosure is directed at an electrode for a battery wherein the electrode comprises clathrate alloys of silicon, germanium or tin. In method form, the present disclosure is directed at methods of forming clathrate alloys of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.

Schottky barrier solar cell

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y. C. M. (Inventor)

1981-01-01

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer.

OPTOELECTRONIC PROPERTIES AND THE GAP STATE DISTRIBUTION IN a-Si, Ge ALLOYS

NASA Astrophysics Data System (ADS)

Aljishi, S.; Smith, Z. E.; Wagner, S.

In this article we review optical and electronic transport data measured in amorphous silicon-germanium alloys with the goal of identifying the density of states as a function of alloy composition. The results show that while alloying a-Si:H with germanium has little effect on the valence band tail, the conduction band tail density of states is increased dramatically. Defect distributions both above and below midgap are detected and identified with the dangling bond D+/° and D°/- states. The density of deep defects below midgap increases exponentially with germanium content. Above midgap, a large concentration of defects lying between 0.3 and 0.5 eV below the conduction band edge has a strong effect on transient electron transport.

Nucleation of the diamond phase in aluminium-solid solutions

NASA Technical Reports Server (NTRS)

Hornbogen, E.; Mukhopadhyay, A. K.; Starke, E. A., Jr.

1993-01-01

Precipitation was studied from fcc solid solutions with silicon, germanium, copper and magnesium. Of all these elements only silicon and germanium form diamond cubic (DC) precipitates in fcc Al. Nucleation of the DC structure is enhanced if both types of atom are dissolved in the fcc lattice. This is interpreted as due to atomic size effects in the prenucleation stage. There are two modes of interference of fourth elements with nucleation of the DC phase in Al + Si, Ge. The formation of the DC phase is hardly affected if the atoms (for example, copper) are rejected from the (Si, Ge)-rich clusters. If additional types of atom are attracted by silicon and/or germanium, DC nuclei are replaced by intermetallic compounds (for example Mg2Si).

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Time-resolved measurements of the angular distribution of lasing at 23.6 nm in Ne-like germanium

NASA Astrophysics Data System (ADS)

Kodama, R.; Neely, D.; Dwivedi, L.; Key, M. H.; Krishnan, J.; Lewis, C. L. S.; O'Neill, D.; Norreys, P.; Pert, G. J.; Ramsden, S. A.; Tallents, G. J.; Uhomoibhi, J.; Zhang, J.

1992-06-01

The time dependence of the angular distribution of soft X-ray lasing at 23.6 nm in Ne-like germanium has been measured using a streak camera. Slabs of germanium have been irradiated over ≈ 22 mm length × 100 μm width with three line focussed beams of the SERC Rutherford Appleton Laboratory VULCAN laser at 1.06 μm wavelength. The laser beam sweeps in time towards the target surface plane and the divergence broadens with time. The change of the peak intensity pointing and the broadening of the profile with time are consistent with expectations of the time dependence of refraction and divergence due to density gradients in the plasma.

On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

NASA Astrophysics Data System (ADS)

Darken, L.

1994-02-01

The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood.

PREFACE: The 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008)

NASA Astrophysics Data System (ADS)

Tanaka, Takaho

2009-07-01

This volume of Journal of Physics: Conference Series contains invited and contributed peer-reviewed papers that were presented at the 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008), which was held on 7-12 September 2008, at Kunibiki Messe, Matsue, Japan. This triennial symposium has a half-century long history starting from the 1st meeting in 1959 at Asbury Park, New Jersey. We were very pleased to organize ISBB 2008, which gathered chemists, physicists, materials scientists as well as diamond and high-pressure researchers. This meeting had a strong background in the boron-related Japanese research history, which includes the discovery of superconductivity in MgB2 and development of Nd-Fe-B hard magnets and of YB66 soft X-ray monochromator. The scope of ISBB 2008 spans both basic and applied interdisciplinary research that is centered on boron, borides and related materials, and the collection of articles defines the state of the art in research on these materials. The topics are centered on: 1. Preparation of new materials (single crystals, thin films, nanostructures, ceramics, etc) under normal or extreme conditions. 2. Crystal structure and chemical bonding (new crystal structures, nonstoichiometry, defects, clusters, quantum-chemical calculations). 3. Physical and chemical properties (band structure, phonon spectra, superconductivity; optical, electrical, magnetic, emissive, mechanical properties; phase diagrams, thermodynamics, catalytic activity, etc) in a wide range of temperatures and pressures. 4. Applications and prospects (thermoelectric converters, composites, ceramics, coatings, etc) There were a few discoveries of new materials, such as nanomaterials, and developments in applications. Many contributions were related to 4f heavy Fermion systems of rare-earth borides. Exotic mechanisms of magnetism and Kondo effects have been discussed, which may indicate another direction of development of boride. Two special sessions, 'Boron chemistry' and 'Superconductivity', were also held at the symposium. The session on Boron chemistry was planned to honor the scientific work in boron chemistry of Professor J Bauer on the occasion of his retirement. Many recent results were discussed in the session, and Professor Bauer himself introduced novel rare-earth-boron-carbon compounds RE10B7C10 (RE = Gd - Er) in his lecture. In the latter session, on the basis of recent discoveries of superconductivity in MgB2 and in β-boron under high pressure, the superconductivity of boron and related materials was discussed and the superconductivity of boron-doped diamond was also addressed. More than 120 participants from 16 countries attended the ISBB 2008, and active presentations (22 invited, 33 oral and 68 posters) and discussions suggest that research on boron and borides is entering a new phase of development. This volume contains 46 articles from 52 submitted manuscripts. The reviewers were invited not only from symposium participants but also from specialists worldwide, and they did a great job of evaluating and commenting on the submitted manuscripts to maintain the highest quality standard of this volume. Recent discoveries of superconductivity in boron under high pressure, synthesis of a new allotrope of boron and of various boron and boride nanostructures will lead this highly interdisciplinary field of science, which will further grow and gain attention in terms of both basic and applied research. In this context, we are very much looking forward to the next symposium, which will be held in Istanbul, Turkey, in 2011, organized by Professor Onuralp Yucel, Istanbul Technical University. Turkey currently has the world highest share of borate production and is expected to be involved more in boron-related research. Acknowledgements We gratefully acknowledge the style improvement by Dr K Iakoubovskii, and sincerely thank Shimane Prefecture and Matsue City for their financial support. The symposium was also supported by Tokyo University of Science, Suwa and foundations including, the Kajima Foundation, Foundation for Promotion of Material Science and Technology of Japan and Nippon Sheet Glass Foundation for Materials Science and Engineering, as well as companies including JFE Steel Corporation, Shincron Co, Ltd, Toyo Kohan Co, Ltd, Fukuda Metal Foil and Powder Co, Ltd, Japan New Metals Co, Ltd, H C Starck Ltd and Fritsch Japan Co, Ltd. Editors Chair Takaho Tanaka (National Institute for Materials Science, Japan) Vice chairs Koun Shirai (Osaka University, Japan) Kaoru Kimura (The University of Tokyo, Japan) Ken-ichi Takagi (Tokyo City University, Japan) Touetsu Shishido (Tohoku University, Japan) Shigeru Okada (Kokushikan University) Hideaki Itoh (Nagoya University,Japan) Katsumitsu Nakamura (Nihon University, Japan) Organizing committee of ISBB 2008 K Takagi Chairman (Tokyo City University) T Tanaka Program Committee Chairman (National Institute for Materials Science) K Kimura Secretary (The University of Tokyo) J Akimitsu (Aoyama University)K Shirai (Osaka University) H Itoh (Nagoya University)T Shishido (Tohoku University) K Nakamura (Nihon University)K Soga (Tokyo University of Science) K Nishiyama (Tokyo University of Science, Suwa)M Takeda (Nagaoka University of Technology) S Okada (Kokushikan University)Y Yamazaki (Toyo Kohan Co, Ltd) International Scientific Committee 0f ISBB (2008-2011) K Takagi Chairman (Japan) B Albert (Germany) J-F Halet (France) M Takeda (Japan) M Antadze (Georgia) H Hillebrecht (Germany) T Tanaka (Japan) J Bauer (France) W Jung (Germany) R Telle (Germany) I Boustani (Germany) K Kimura (Japan) M Trenary (USA) D Emin (USA) T Mori (Japan) O Tsagareishvili (Georgia) M Engler (Germany) P D Ownby (USA) H Werheit (Germany) N Frage (Israel) P Rogl (Austria) G Will (Germany) Yu Grin (Germany) S Shalamberidze (Georgia) O Yucel (Turkey) V N Gurin (Russia) N Shitsevalova (Ukraine) G Zhang (China)

Thermal emission property of solid solution Gd{sub 1-x}Nd{sub x}B{sub 6} (x=0, 0.6, 0.8)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing Zhang, Jiu; Hong Bao, Li; Lin Zhou, Shen, E-mail: zjiuxing@bjut.edu.cn, E-mail: Baolihong_10@yahoo.com.cn, E-mail: zhoushenlin@emails.bjut.edu.cn

2011-07-01

In this paper, to further explore the excellent emission properties of rare earth boride cathode, herein we present the synthesis, characterization and properties of polycrystalline Nd{sub 1-x}Gd{sub x}B{sub 6} (x = 0, 0.6, 0.8) bulk via arc plasma and reactive SPS. (author)

Process research into metallic pipe wear of hot chamber die casting machines and methods ofincreasing wear resistance

NASA Astrophysics Data System (ADS)

Mukhametzyanova, G. F.; Kolesnikov, MS; Mukhametzyanov, I. R.; Astatshenko, V. I.

2017-09-01

The kinetics and reasons for metallic pipe wear of hot chamberzinc alloy die casting machines are established.Increasing metallic pipe wear components wear resistance is being achieved by means of die steelДИ - 22 with electroslag remelting modification and electron-beamremelting modification and after the processes of nitriding and boriding besides.

Nb2OsB2, with a new twofold superstructure of the U3Si2 type: Synthesis, crystal chemistry and chemical bonding

NASA Astrophysics Data System (ADS)

Mbarki, Mohammed; Touzani, Rachid St.; Fokwa, Boniface P. T.

2013-07-01

The new ternary metal-rich boride, Nb2OsB2, was synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The compound was characterized from single-crystal X-ray data and EDX measurements. It crystallizes as a new superstructure (space group P4/mnc, no. 128) of the tetragonal U3Si2-structure type with lattice parameters a=5.922(1) Å and c=6.879(2) Å. All of the B atoms are involved in B2 dumbbells with B-B distances of 1.89(4) Å. Structure relaxation using VASP (Vienna ab intio Simulation Package) has confirmed the space group and the lattice parameters. According to electronic structure calculations (TB-LMTO-ASA), the homoatomic B-B interactions are optimized and very strong, but relatively strong heteroatomic Os-B, Nb-B and Nb-Os bonds are also found: These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of this new phase. The density of state at the Fermi level predicts metallic behavior, as expected, from this metal-rich boride.

The use of surface layer with boron in friction pairs lubricated by engine oils

NASA Astrophysics Data System (ADS)

Szczypiński-Sala, W.; Lubas, J.

2016-09-01

The aim of the present work is to determine the influence of surface layers with boron and engine oil on the processes of friction and wear in friction pairs. The ring samples with borided surface layer cooperated under test conditions with counterparts made with CuPb30 and AlSn20 bearing alloys. During the tests, the friction pairs were lubricated with 15W/40 Lotos mineral oil and 5W/40 Lotos synthetic oil. The lubrication of friction area with Lotos mineral oil causes the reduction of the friction force, the temperature in the friction area and the wear of the bearing alloys under study, whereas the lubrication with Lotos synthetic oil reduces the changes in the geometrical structure of the cooperating friction pair elements. Lubrication of the friction area in the start-up phase of the friction pair by mineral oil causes faster stabilization of the friction conditions in the contact area than in the cause of lubrication of the friction pair by synthetic oil. The intensity of wear of the AlSn20 bearing alloy cooperating with the borided surface layer is three times smaller than the intensity of use of the CuPb30 alloy bearing.

Synthesis, crystal structure investigation and magnetism of the complex metal-rich boride series Crx(Rh1-yRuy)7-xB3 (x=0.88-1; y=0-1) with Th7Fe3-type structure

NASA Astrophysics Data System (ADS)

Misse, Patrick R. N.; Mbarki, Mohammed; Fokwa, Boniface P. T.

2012-08-01

Powder samples and single crystals of the new complex boride series Crx(Rh1-yRuy)7-xB3 (x=0.88-1; y=0-1) have been synthesized by arc-melting the elements under purified argon atmosphere on a water-cooled copper crucible. The products, which have metallic luster, were structurally characterized by single-crystal and powder X-ray diffraction as well as EDX measurements. Within the whole solid solution range the hexagonal Th7Fe3 structure type (space group P63mc, no. 186, Z=2) was identified. Single-crystal structure refinement results indicate the presence of chromium at two sites (6c and 2b) of the available three metal Wyckoff sites, with a pronounced preference for the 6c site. An unexpected Rh/Ru site preference was found in the Ru-rich region only, leading to two different magnetic behaviors in the solid solution: The Rh-rich region shows a temperature-independent (Pauli) paramagnetism whereas an additional temperature-dependent paramagnetic component is found in the Ru-rich region.

On the transferability of electron density in binary vanadium borides VB, V3B4 and VB2.

PubMed

Terlan, Bürgehan; Akselrud, Lev; Baranov, Alexey I; Borrmann, Horst; Grin, Yuri

2015-12-01

Binary vanadium borides are suitable model systems for a systematic analysis of the transferability concept in intermetallic compounds due to chemical intergrowth in their crystal structures. In order to underline this structural relationship, topological properties of the electron density in VB, V3B4 and VB2 reconstructed from high-resolution single-crystal X-ray diffraction data as well as derived from quantum chemical calculations, are analysed in terms of Bader's Quantum Theory of Atoms in Molecules [Bader (1990). Atoms in Molecules: A Quantum Theory, 1st ed. Oxford: Clarendon Press]. The compounds VB, V3B4 and VB2 are characterized by a charge transfer from the metal to boron together with two predominant atomic interactions, the shared covalent B-B interactions and the polar covalent B-M interactions. The resembling features of the crystal structures are well reflected by the respective B-B interatomic distances as well as by ρ(r) values at the B-B bond critical points. The latter decrease with an increase in the corresponding interatomic distances. The B-B bonds show transferable electron density properties at bond critical points depending on the respective bond distances.

Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it; Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.

2016-07-07

High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

Enhanced Light Emitters Based on Metamaterials

DTIC Science & Technology

2015-03-30

program period in Queens College of CUNY (Nov 2012 – May 2014), we successfully demonstrated growth of ultrasmooth silver films using germanium wetting...of CUNY (Nov 2012 – May 2014), we successfully demonstrated growth of ultrasmooth silver films using germanium wetting layer, use of a high...progress made during the program include: - Realization of ultrasmooth sub-wavelength thick silver films for hyperbolic metamaterials - Using high

Germanium films by polymer-assisted deposition

DOEpatents

Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

2013-01-15

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

The Majorana Low-noise Low-background Front-end Electronics

NASA Astrophysics Data System (ADS)

Abgrall, N.; Aguayo, E.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, J.; MacMullin, S.; Martin, R. D.; Meijer, S.; Mertens, S.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Suriano, A. M.; Thompson, J.; Timkin, V.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope 76Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolution performances. We present here the low-noise low- background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.

Germanium and uranium in coalified wood bom upper Devonian black shale

USGS Publications Warehouse

Breger, I.A.; Schopf, J.M.

1955-01-01

Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Cauixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragmenta were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding. ?? 1955.

Grafting of Oligo(ethylene glycol)-Functionalized Calix[4]arene-Tetradiazonium Salts for Antifouling Germanium and Gold Surfaces.

PubMed

Blond, Pascale; Mattiuzzi, Alice; Valkenier, Hennie; Troian-Gautier, Ludovic; Bergamini, Jean-François; Doneux, Thomas; Goormaghtigh, Erik; Raussens, Vincent; Jabin, Ivan

2018-05-29

Biosensors that can determine protein concentration and structure are highly desired for biomedical applications. For the development of such biosensors, the use of Fourier transform infrared (FTIR) spectroscopy with the attenuated internal total reflection (ATR) configuration is particularly attractive, but it requires appropriate surface functionalization of the ATR optical element. Indeed, the surface has to specifically interact with a target protein in close contact with the optical element and must display antifouling properties to prevent nonspecific adsorption of other proteins. Here, we report robust monolayers of calix[4]arenes bearing oligo(ethylene glycol) (oEG) chains, which were grafted on germanium and gold surfaces via their tetradiazonium salts. The formation of monolayers of oEGylated calix[4]arenes was confirmed by AFM, IR, and contact angle measurements. The antifouling properties of these modified surfaces were studied by ATR-FTIR spectroscopy and fluorescence microscopy, and the nonspecific absorption of bovine serum albumin was found to be reduced by 85% compared to that of unmodified germanium. In other words, the organic coating by oEGylated calix[4]arenes provides remarkable antifouling properties, opening the way for the design of germanium- or gold-based biosensors.

Production, characterization and operation of $$^{76}$$Ge enriched BEGe detectors in GERDA

DOE PAGES

Agostini, M.; Allardt, M.; Andreotti, E.; ...

2015-02-03

The GERmanium Detector Array (Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0νββ) of 76Ge. Germanium detectors made of material with an enriched 76Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new 76 Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present article reviews the complete production chain of these BEGe detectors including isotopic enrichment,more » purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the 76Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. Lastly, the detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.« less

A novel strategy to prepare Ge@C/rGO hybrids as high-rate anode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Wang, Bangrun; Wen, Zhaoyin; Jin, Jun; Hong, Xiaoheng; Zhang, Sanpei; Rui, Kun

2017-02-01

Germanium is considered as a promising anode material for lithium ion batteries (LIBs) due to its high-capacity. However, owing to the huge volume variation during cycling, the batteries based on germanium anodes usually show poor cyclability and inferior rate capability. Herein, we demonstrated a novel strategy to uniformly anchor the core-shell structured germanium@carbon (Ge@C) on the reduced graphene oxide (rGO) nanosheets by the strong adhesion of dopamine. In the resulting Ge@C/rGO hybrid, the amorphous carbon layer and rGO nanosheets can effectively reduce the agglomeration of germanium and provide buffer matrix for the volume change in electrochemical lithium reactions. When used as anode materials for LIBs, Ge@C/rGO hybrids deliver a reversible capacity of 1074.4 mA h g-1 at 2C after 600 cycles (with capacity retention of 96.5%) and high rate capability of 436 mA h g-1 at 20C after 200 cycles. The encouraging electrochemical performance clearly demonstrates that Ge@C/rGO hybrids could be a potential anode material with high capacity, excellent rate capability, and good cycling stability for LIBs.

Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

PubMed

Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

2014-05-01

We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

Non-local electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Aguayo, Estanislao; Avignone, F. T.

The MAJORANA DEMONSTRATOR will search for the neutrinoless double beta decay (ββ(0ʋ) of the isotope 76Ge with a mixed array of enriched and natural Germanium detectors. In view of the next generation of tonne-scale germanium-based (ββ(0ʋ)-decay searches, a major goal of the MAJORANA DEMONSTRATOR is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the 76Ge (ββ(0ʋ)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolutionmore » performances. We present here the low-noise low background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the MAJORANA DEMONSTRATOR. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.« less

The Majorana low-noise low-background front-end electronics

DOE PAGES

Abgrall, N.; Aguayo, E.; Avignone, III, F. T.; ...

2015-03-24

The Majorana Demonstrator will search for the neutrinoless double beta decay (ββ(0ν)) of the isotope ⁷⁶Ge with a mixed array of enriched and natural germanium detectors. In view of the next generation of tonne-scale germanium-based ββ(0ν)-decay searches, a major goal of the Majorana Demonstrator is to demonstrate a path forward to achieving a background rate at or below 1 cnt/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039-keV Q-value of the ⁷⁶Ge ββ(0ν)-decay. Such a requirement on the background level significantly constrains the design of the readout electronics, which is further driven by noise and energy resolutionmore » performances. We present here the low-noise low-background front-end electronics developed for the low-capacitance p-type point contact (P-PC) germanium detectors of the Majorana Demonstrator. This resistive-feedback front-end, specifically designed to have low mass, is fabricated on a radioassayed fused-silica substrate where the feedback resistor consists of a sputtered thin film of high purity amorphous germanium and the feedback capacitor is based on the capacitance between gold conductive traces.« less

Searching Neutrinoless Double Beta Decay with GERDA Phase II

NASA Astrophysics Data System (ADS)

Agostini, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Bettini, A.; Bezrukov, L.; Bode, T.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Comellato, T.; D’Andrea, V.; Demidova, E. V.; di Marco, N.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Gangapshev, A.; Garfagnini, A.; Giordano, M.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hahne, C.; Hakenmüller, J.; Hegai, A.; Heisel, M.; Hemmer, S.; Hiller, R.; Hofmann, W.; Holl, P.; Hult, M.; Inzhechik, L. V.; Ioannucci, L.; Csáthy, J. Janicskó; Jochum, J.; Junker, M.; Kazalov, V.; Kermaidic, Y.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Kish, A.; Klimenko, A.; Kneißl, R.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Marissens, G.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Nisi, S.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Ransom, C.; Reissfelder, M.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Sala, E.; Salamida, F.; Schmitt, C.; Schneider, B.; Schreiner, J.; Schulz, O.; Schweisshelm, B.; Schwingenheuer, B.; Schönert, S.; Schütz, A.-K.; Seitz, H.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Wegmann, A.; Wester, T.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zschocke, A.; Zsigmond, A. J.; Zuber, K.; Zuzel, G.

An observation of neutrinoless double beta (0νββ) decay would allow to shed light onto the nature of neutrinos. GERDA (GERmanium Detector Array) aims to discover this process in a background-free search using 76Ge. The experiment is located at the Laboratori Nazionali del Gran Sasso (LNGS) of the Istituto Nazionale di Fisica Nucleare (INFN) in Italy. Bare, isotopically enriched, high purity germanium detectors are operated in liquid argon. GERDA follows a staged approach. In Phase II 35.6 kg of enriched germanium detectors are operated since December 2015. The application of active background rejection methods, such as a liquid argon scintillation light read-out and pulse shape discrimination of germanium detector signals, allows to reduce the background index to the intended level of 10‑3 cts/(keVṡkgṡyr). No evidence for the 0νββ decay has been found in 23.2 kgṡyr of Phase II data, and together with data from Phase I the up-to-date most stringent half-life limit for this process in 76Ge has been established, at a median sensitivity of 5.8ṡ1025yr the 90% C.L. lower limit is 8.0ṡ1025yr.

Research and Development Supporting a Next Generation Germanium Double Beta Decay Experiment

NASA Astrophysics Data System (ADS)

Rielage, Keith; Elliott, Steve; Chu, Pinghan; Goett, Johnny; Massarczyk, Ralph; Xu, Wenqin

2015-10-01

To improve the search for neutrinoless double beta decay, the next-generation experiments will increase in source mass and continue to reduce backgrounds in the region of interest. A promising technology for the next generation experiment is large arrays of Germanium p-type point contact detectors enriched in 76-Ge. The experience, expertise and lessons learned from the MAJORANA DEMONSTRATOR and GERDA experiments naturally lead to a number of research and development activities that will be useful in guiding a future experiment utilizing Germanium. We will discuss some R&D activities including a hybrid cryostat design, background reduction in cabling, connectors and electronics, and modifications to reduce assembly time. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Orthogonal strip HPGe planar SmartPET detectors in Compton configuration

NASA Astrophysics Data System (ADS)

Boston, H. C.; Gillam, J.; Boston, A. J.; Cooper, R. J.; Cresswell, J.; Grint, A. N.; Mather, A. R.; Nolan, P. J.; Scraggs, D. P.; Turk, G.; Hall, C. J.; Lazarus, I.; Berry, A.; Beveridge, T.; Lewis, R.

2007-10-01

The evolution of Germanium detector technology over the last decade has lead to the possibility that they can be employed in medical and security imaging. The potential of excellent energy resolution coupled with good position information that Germanium affords removes the necessity for mechanical collimators that would be required in a conventional gamma camera system. By removing this constraint, the overall dose to the patient can be reduced or the throughput of the system can be increased. An additional benefit of excellent energy resolution is that tight gates can be placed on energies from either a multi-lined gamma source or from multi-nuclide sources increasing the number of sources that can be used in medical imaging. In terms of security imaging, segmented Germanium gives directionality and excellent spectroscopic information.

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

NASA Astrophysics Data System (ADS)

Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

2017-11-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Integrated all-optical infrared switchable plasmonic quantum cascade laser.

PubMed

Kohoutek, John; Bonakdar, Alireza; Gelfand, Ryan; Dey, Dibyendu; Nia, Iman Hassani; Fathipour, Vala; Memis, Omer Gokalp; Mohseni, Hooman

2012-05-09

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 μm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.

Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

NASA Astrophysics Data System (ADS)

Vandenberghe, William G.; Fischetti, Massimo V.

2015-01-01

The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: DTA = 4.1 × 108 eV/cm, DTO = 1.2 × 109 eV/cm, and DLO = 2.2 × 109 eV/cm for BTBT in silicon and DTA = 7.8 × 108 eV/cm and DLO = 1.3 × 109 eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.

Vapor pressure and evaporation rate of certain heat-resistant compounds in a vacuum at high temperatures

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Verkhoglyadova, T. S.; Samsonov, G. V.

1985-01-01

The vapor pressure and evaporation rate of borides of titanium, zirconium, and chrome; and of strontium and carbides of titanium, zirconium, and chrome, molybdenum silicide; and nitrides of titanium, niobium, and tantalum in a vacuum were studied. It is concluded that all subject compounds evaporate by molecular structures except AlB sub 12' which dissociates, losing the aluminum.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

LINER FOR EXTRUSION BILLET CONTAINERS

DTIC Science & Technology

Shrink-fit assembly device for buildup of ceramic-coated liner and sleeve assemblies was tested and modified to develop desired temperatures and...preliminary evaluation of suitability for extrusion liner use. Procedures were developed for welding short, hollow ceramic cylinders of high-strength metal...carbides and borides to form a ceramic extrusion liner of suitable length. Disassembly tooling for rapid separation of shrink-fitted sleeves from a worn

Correlation between thermodynamical stabilities of metal borohydrides and cation electronegativites: First-principles calculations and experiments

NASA Astrophysics Data System (ADS)

Nakamori, Yuko; Miwa, Kazutoshi; Ninomiya, Akihito; Li, Haiwen; Ohba, Nobuko; Towata, Shin-Ichi; Züttel, Andreas; Orimo, Shin-Ichi

2006-07-01

The thermodynamical stabilities for the series of metal borohydrides M(BH4)n ( M=Li , Na, K, Cu, Mg, Zn, Sc, Zr, and Hf; n=1-4 ) have been systematically investigated by first-principles calculations. The results indicated that an ionic bonding between Mn+ cations and [BH4]- anions exists in M(BH4)n , and the charge transfer from Mn+ cations to [BH4]- anions is a key feature for the stability of M(BH4)n . A good correlation between the heat of formation ΔHboro of M(BH4)n and the Pauling electronegativity of the cation χP can be found, which is represented by the linear relation, ΔHboro=248.7χP-390.8 in the unit of kJ/mol BH4 . In order to confirm the predicted correlation experimentally, the hydrogen desorption reactions were studied for M(BH4)n ( M=Li , Na, K, Mg, Zn, Sc, Zr, and Hf), where the samples of the later five borohydrides were mechanochemically synthesized. The thermal desorption analyses indicate that LiBH4 , NaBH4 , and KBH4 desorb hydrogen to hydride phases. Mg(BH4)2 , Sc(BH4)3 , and Zr(BH4)4 show multistep desorption reactions through the intermediate phases of hydrides and/or borides. On the other hand, Zn(BH4)2 desorbs hydrogen and borane to elemental Zn due to instabilities of Zn hydride and boride. A correlation between the desorption temperature Td and the Pauling electronegativity χP is observed experimentally and so χP is an indicator to approximately estimate the stability of M(BH4)n . The enthalpy change for the desorption reaction, ΔHdes , is estimated using the predicted ΔHboro and the reported data for decomposed product, ΔHhyd/boride . The estimated ΔHdes show a good correlation with the observed Td , indicating that the predicted stability of borohydride is experimentally supported. These results are useful for exploring M(BH4)n with appropriate stability as hydrogen storage materials.

Complete titanium substitution by boron in a tetragonal prism: exploring the complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) by experiment and theory.

PubMed

Fokwa, Boniface P T; Hermus, Martin

2011-04-18

Polycrystalline samples and single crystals of four members of the new complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The new silvery phases were structurally characterized by powder and single-crystal X-ray diffraction as well as energy- and wavelength-dispersive X-ray spectroscopy analyses. They crystallize with the tetragonal Ti(3)Co(5)B(2) structure type in space group P4/mbm (No. 127). Tetragonal prisms of Ru/Ir atoms are filled with titanium in the boron-poorest phase (Ti(3)Ru(2.9)Ir(2.1)B(2)). Gradual substitution of titanium by boron then results in the successive filling of this site by a Ti/B mixture en route to the complete boron occupation, leading to the boron-richest phase (Ti(2)Ru(2.8)Ir(2.2)B(3)). Furthermore, both ruthenium and iridium share two sites in these structures, but a clear Ru/Ir site preference is found. First-principles density functional theory calculations (Vienna ab initio simulation package) on appropriate structural models (using a supercell approach) have provided more evidence on the stability of the boron-richest and -poorest phases, and the calculated lattice parameters corroborate very well with the experimentally found ones. Linear muffin-tin orbital atomic sphere approximation calculations further supported these findings through crystal orbital Hamilton population bonding analyses, which also show that the Ru/Ir-B and Ru/Ir-Ti heteroatomic interactions are mainly responsible for the structural stability of these compounds. Furthermore, some stable and unstable phases of this complex series could be predicted using the rigid-band model. According to the density of states analyses, all phases should be metallic conductors, as was expected from these metal-rich borides.

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

NASA Astrophysics Data System (ADS)

Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

2015-03-01

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Germanium Requirements for National Defense,

DTIC Science & Technology

1991-07-01

work in this area involves development of hard exterior coating materials that will protect Ge windows but not adversely affect their optical...advanced electronic materials, is used in semiconductor devices, fiber optic systems, and infrared sensors for ships, aircraft, missiles, tanks and anti -tank...infrared sensors for ships, aircraft, missiles, tanks and anti -tank units. Because of its importance in these applications, germanium was added to the

Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

NASA Astrophysics Data System (ADS)

Leung, Michael

Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron) has been found to be reasonably successful in describing the effect in InSb. The inclusion of non-parabolicity and hot electron effects gives a consistent description of the experimental observations.

226Ra, 210Pb, 210Bi and 210Po deposition and removal from surfaces and liquids.

PubMed

Wójcik, M; Zuzel, G

Deposition of 226 Ra from water on nylon was investigated. Measurements performed for different pH and different radium concentrations in the water gave similar absolute activities deposited on the foil surface. Obtained results were used to estimate the amount of 226 Ra plated-out on the nylon scintillator vessel in the solar neutrino experiment BOREXINO during filling of the detector. Another problem studied in the frame of BOREXINO was the removal of 210 Pb from its organic liquid scintillator by applying distillation and water extraction. After several tests had been performed for both methods it was found that after the water extraction the initial lead content in the scintillator sample was reduced only accordingly to the ratio of the volumes of the applied liquids (simple dilution). In contrast to this, distillation was very effective providing in the best case a 210 Pb reduction factor higher than 100. Removal efficiencies of the long-lived 222 Rn daughters during etching from surfaces of standard and high purity germanium were investigated in the frame of the GERDA experiment, which aims to search for neutrino-less double beta decay of 76 Ge. The standard etching procedure of Canberra used during production of high purity n-type germanium diodes was applied to germanium discs, which had been exposed earlier to a strong 222 Rn source for its progenies deposition. In contrast to copper and stainless steel, 210 Pb, 210 Bi and 210 Po was removed from germanium very efficiently. An evidence of a reverse process was also observed-the isotopes were transferred from the etchant to the clean germanium surface.

Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements.

PubMed

Krecar, D; Rosner, M; Draxler, M; Bauer, P; Hutter, H

2006-01-01

The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about 60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well, and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained by choosing a primary energy of 500 keV and a tilt angle of 51 degrees with respect to the surface normal. Quantitative information was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (delta) layer), and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated using SIMS instead.

Crucible-free pulling of germanium crystals

NASA Astrophysics Data System (ADS)

Wünscher, Michael; Lüdge, Anke; Riemann, Helge

2011-03-01

Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient. Under these conditions, the screw-like growth could be avoided. Unfortunately, the helium cooling deteriorates the melting behavior of the feed rod. Spikes appear along the open melt front, which touch on the induction coil. In order to improve the melting behavior, we used a lamp as a second energy source as well as a mixture of Ar and He. With this, we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace. The experimental work is accompanied by the simulation of the stationary temperature field. The commercially available software FEMAG-FZ is used for axisymmetric calculations. Another tool for process development is the lateral photo-voltage scanning (LPS), which can determine the shape of the solid-liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal. In addition to improvements of the process, these measurements can be compared with the calculated results and, hence, conduce to validate the calculation.

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

NASA Astrophysics Data System (ADS)

Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

2016-08-01

Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

PubMed Central

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; Remington, Bruce A.; Hahn, Eric N.; More, Karren L.; Meyers, Marc A.

2017-01-01

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition. PMID:28847926

Adhesion and friction of iron and gold in contact with elemental semiconductors

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Brainard, W. A.

1977-01-01

Adhesion and friction experiments were conducted with single crystals of iron and gold in contact with single crystals of germanium and silicon. Surfaces were examined in the sputter cleaned state and in the presence of oxygen and a lubricant. All experiments were conducted at room temperature with loads of 1 to 50 grams, and sliding friction was at a sliding velocity of 0.7 mm/min. Results indicate that the friction nature of metals in contact with semiconductors is sensitive to orientation, that strong adhesion of metals to both germanium and silicon occurs, and that friction is lower with silicon than with germanium for the same orientation. Surface effects are highly sensitive to environment. Silicon, for example, behaves in an entirely brittle manner in the clean state, but in the presence of a lubricant the surface deforms plastically.

Characterization of a high-purity germanium detector for small-animal SPECT

PubMed Central

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-01-01

We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization.

PubMed

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E; Remington, Bruce A; Hahn, Eric N; More, Karren L; Meyers, Marc A

2017-09-12

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.

Position resolution simulations for the inverted-coaxial germanium detector, SIGMA

NASA Astrophysics Data System (ADS)

Wright, J. P.; Harkness-Brennan, L. J.; Boston, A. J.; Judson, D. S.; Labiche, M.; Nolan, P. J.; Page, R. D.; Pearce, F.; Radford, D. C.; Simpson, J.; Unsworth, C.

2018-06-01

The SIGMA Germanium detector has the potential to revolutionise γ-ray spectroscopy, providing superior energy and position resolving capabilities compared with current large volume state-of-the-art Germanium detectors. The theoretical position resolution of the detector as a function of γ-ray interaction position has been studied using simulated detector signals. A study of the effects of RMS noise at various energies has been presented with the position resolution ranging from 0.33 mm FWHM at Eγ = 1 MeV, to 0.41 mm at Eγ = 150 keV. An additional investigation into the effects pulse alignment have on pulse shape analysis and in turn, position resolution has been performed. The theoretical performance of SIGMA operating in an experimental setting is presented for use as a standalone detector and as part of an ancillary system.

US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dreyer, J.; Burks, M.; Ham, Y.

2015-10-20

This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results frommore » PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.« less

Characterization of a high-purity germanium detector for small-animal SPECT.

PubMed

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-09-21

We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

Melting point of high-purity germanium stable isotopes

NASA Astrophysics Data System (ADS)

Gavva, V. A.; Bulanov, A. D.; Kut'in, A. M.; Plekhovich, A. D.; Churbanov, M. F.

2018-05-01

The melting point (Tm) of germanium stable isotopes 72Ge, 73Ge, 74Ge, 76Ge was determined by differential scanning calorimetry. With the increase in atomic mass of isotope the decrease in Tm is observed. The decrease was equal to 0.15 °C per the unit of atomic mass which qualitatively agrees with the value calculated by Lindemann formula accounting for the effect of "isotopic compression" of elementary cell.

Silicon Germanium Cryogenic Low Noise Amplifiers

NASA Astrophysics Data System (ADS)

Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

2017-05-01

Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rangel-Kuoppa, Victor-Tapio; Jantsch, Wolfgang; Tonkikh, Alexander

2013-12-04

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

Substrate decomposition in galvanic displacement reaction: Contrast between gold and silver nanoparticle formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, Tapas; Satpati, Biswarup, E-mail: biswarup.satpati@saha.ac.in; Kabiraj, D.

We have investigated substrate decomposition during formation of silver and gold nanoparticles in galvanic displacement reaction on germanium surfaces. Silver and gold nanoparticles were synthesized by electroless deposition on sputter coated germanium thin film (∼ 200 nm) grown initially on silicon substrate. The nanoparticles formation and the substrate corrosion were studied using scanning transmission electron microscopy (STEM) and the energy dispersive X-ray (EDX) spectroscopy.

First results of GERDA Phase II and consistency with background models

NASA Astrophysics Data System (ADS)

Agostini, M.; Allardt, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode1, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; Di Marco, N.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakenmüller, J.; Hegai, A.; Heisel, M.; Hemmer, S.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Kish, A.; Klimenko, A.; Kneißl, R.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Medinaceli, E.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Palioselitis, D.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Salathe, M.; Schmitt, C.; Schneider, B.; Schönert, S.; Schreiner, J.; Schulz, O.; Schütz, A.-K.; Schwingenheuer, B.; Selivanenko, O.; Shevzik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Wegmann, A.; Wester, T.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2017-01-01

The GERDA (GERmanium Detector Array) is an experiment for the search of neutrinoless double beta decay (0νββ) in 76Ge, located at Laboratori Nazionali del Gran Sasso of INFN (Italy). GERDA operates bare high purity germanium detectors submersed in liquid Argon (LAr). Phase II of data-taking started in Dec 2015 and is currently ongoing. In Phase II 35 kg of germanium detectors enriched in 76Ge including thirty newly produced Broad Energy Germanium (BEGe) detectors is operating to reach an exposure of 100 kg·yr within about 3 years data taking. The design goal of Phase II is to reduce the background by one order of magnitude to get the sensitivity for T1/20ν = O≤ft( {{{10}26}} \\right){{ yr}}. To achieve the necessary background reduction, the setup was complemented with LAr veto. Analysis of the background spectrum of Phase II demonstrates consistency with the background models. Furthermore 226Ra and 232Th contamination levels consistent with screening results. In the first Phase II data release we found no hint for a 0νββ decay signal and place a limit of this process T1/20ν > 5.3 \\cdot {1025} yr (90% C.L., sensitivity 4.0·1025 yr). First results of GERDA Phase II will be presented.

Germanium and uranium in coalified wood from Upper Devonian black shale

USGS Publications Warehouse

Breger, Irving A.; Schopf, James M.

1954-01-01

Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Callixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragments were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as have been found to exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding.

Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

NASA Astrophysics Data System (ADS)

Yoo, S.; Zeng, X. C.

2006-05-01

We performed a constrained search for the geometries of low-lying neutral germanium clusters GeN in the size range of 21⩽N⩽29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N ˜65.

Density Functional Theory Calculations Revealing Metal-like Band Structures for Ultrathin Ge {111} and {211} Surface Layers.

PubMed

Tan, Chih-Shan; Huang, Michael Hsuan-Yi

2018-05-21

To find out if germanium should also possess facet-dependent electrical conductivity properties, surface state density functional theory (DFT) calculations were performed on 1-6 layers of Ge (100), (110), (111), and (211) planes. Tunable Ge (100) and (110) planes always present the same semiconducting band structure with a band gap of 0.67 eV expected of bulk germanium. In contrast, 1, 2, 4, and 5 layers of Ge (111) and (211) plane models show metal-like band structures with continuous density of states (DOS) throughout the entire band. For 3 and 6 layers of Ge (111) and (211) plane models, the normal semiconducting band structure was obtained. The plane layers with metal-like band structures also show Ge-Ge bond length deviations and bond distortions, as well as significantly different 4s and 4p frontier orbital electron count and their relative percentages integrated over the valence and conduction bands from those of the semiconducting state. These differences should contribute to strikingly dissimilar band structures. The calculation results suggest observation of facet-dependent electrical conductivity properties of germanium materials, and transistors made of germanium may also need to consider the facet effects with shrinking dimensions approaching 3 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO x films and multilayer Ge/SiO2 structures

NASA Astrophysics Data System (ADS)

Grachev, D. A.; Ershov, A. V.; Karabanova, I. A.; Pirogov, A. V.; Nezhdanov, A. V.; Mashin, A. I.; Pavlov, D. A.

2017-05-01

The GeO x films and multilayer nanoperiodic Ge/SiO2 structures containing germanium nanocrystals were prepared by physical vapor deposition in vacuum. The properties of the films and multilayer structures were controlled by varying the deposition temperature in the range of 35-590°C and the annealing temperature in the range of 400-1000°C. A comparative study of the optical and structural characteristics of the nanosystems was performed using the methods of Raman scattering spectroscopy, IR spectroscopy, photoluminescence, and electron microscopy, which demonstrated a qualitative similarity of the nanosystems. It was found that annealing at temperatures in the range of 600-800°C leads to the formation of germanium nanocrystals with a high density ( 1012 cm-2), whereas in the materials not subjected to annealing, their density did not exceed 1010 cm-2. The average size of the nanocrystals was found to be 5 ± 2 nm. For both nanosystems, three luminescence bands were observed at 1.2, 1.5-1.7, and 1.7-2.0 eV. It was assumed that the origin of these bands is associated with germanium nanocrystals, oxygen-deficient centers in GeOx, and defects at the Ge/dielectric interface, respectively.

Ternary boride product and process

NASA Technical Reports Server (NTRS)

Clougherty, Edward V. (Inventor)

1976-01-01

A hard, tough, strong ceramic body is formed by hot pressing a mixture of a powdered metal and a powdered metal diboride. The metal employed is zirconium, titanium or hafnium and the diboride is the diboride of a different member of the same group of zirconium, titanium or hafnium to form a ternary composition. During hot pressing at temperatures above about 2,000.degree.F., a substantial proportion of acicular ternary monoboride is formed.

Mechanical, Electronic and Optical Properties of Two Phases of NbB4: First-Principles Calculations

NASA Astrophysics Data System (ADS)

Yang, Ruike; Ma, Shaowei; Wei, Qun; Zhang, Dongyun

2018-05-01

As transition metal borides have been successfully synthesised, the study of the combination of transition metal and boron is another effective way to investigate the properties of boride. We have predicted the novel phase Amm2-NbB4. Using the Cambridge Serial Total Energy Package (CASTEP) code, we further researched on the mechanical, electronic and optical properties of C2/c- and Amm2-NbB4. It is found that both the phases of NbB4 are dynamically and mechanically stable at 0 and 100 GPa. Their Vickers hardness values are both 34 GPa, which indicate that they are hard materials. The band gap of C2/c-NbB4 is 0.145 eV, which indicates that it is a semiconductor (or metalloid) at 0 GPa. For the Amm2-NbB4, the band structure without band gap indicates it is a metal at 0 GPa. The optical properties of these two structures are similar. At 0 eV, the real part of dielectric function is 28.8 for C2/c-NbB4, and the real part value for Amm2-NbB4 is 43. We hope our work will provide some help to the experimental work about the technology of the material.

A study of the microstructure of a rapidly solidified nickel-base superalloy modified with boron. M.S. Thesis. Final Contractor Report

NASA Technical Reports Server (NTRS)

Speck, J. S.

1986-01-01

The microstructures of melt-spun superalloy ribbons with variable boron levels have been studied by transmission electron microscopy. The base alloy was of approximate composition Ni-11% Cr-5%Mo-5%Al-4%Ti with boron levels of 0.06, 0.12, and 0.60 percent (all by weight). Thirty micron thick ribbons display an equiaxed chill zone near the wheel contact side which develops into primary dendrite arms in the ribbon center. Secondary dendrite arms are observed near the ribbon free surface. In the higher boron bearing alloys, boride precipitates are observed along grain boundaries. A concerted effort has been made to elucidate true grain shapes by the use of bright field/dark field microscopy. In the low boron alloy, grain shapes are often convex, and grain faces are flat. Boundary faces frequently have large curvature, and grain shapes form concave polygons in the higher boron level alloys. It is proposed that just after solidification, in all of the alloys studied, grain shapes were initially concave and boundaries were wavy. Boundary straightening is presumed to occur on cooling in the low boron alloy. Boundary migration is precluded in the higher boron alloys by fast precipitation of borides at internal interfaces.

Germanium detector vacuum encapsulation

NASA Technical Reports Server (NTRS)

Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

1991-01-01

This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

Refractive Index of Silicon and Germanium and Its Wavelength and Temperature Derivatives.

DTIC Science & Technology

1979-03-01

of a misnomer and, although Clemens Winkler is cred- ited with the discovery of the element in 1886, germanium has become an element of interest in...rather small in covalent semiconductors like Si and Ge, it increases, however, with increasing polarity. Both the radio -frequency mea- surement and...temperature region 250-480 K, but nonlinearity progressively predominates at lower temperatures, as seen from figure 7. Lukes and Schmidt [18] studied

Reestablishing Strategic and Critical Material Security in the Department of Defense

DTIC Science & Technology

2011-05-11

Nickel >700% Tungsten 300% Titanium 600% Cobalt 325% Germanium 300% Chromium 500% Molybdenum 500% Indium 300% Manganese 350% Rhenium > 1000% Peak...CHAIN LEADERSHIP New Mission Example • Currently working with Tinker Air Force Base on a rhenium availability issue – Rhenium is a super alloy used in...acquisitions to assure industrial base capability – Titanium – Rare Earth Elements – Germanium – Rhenium / nickel super-alloys – Other materials as supply chain

Limits on Spin-independent Couplings of Light Dark Matter WIMPs with a p-type Point-contact Germanium Detector

NASA Astrophysics Data System (ADS)

Lin, S. T.; Wong, H. T.

New limits on spin-independent WIMP-nucleon coupling using 39.5 kg-days of data taken with a p-type point-contact germanium detector with fiducial mass of 840 g at the Kuo-Sheng Reactor Neutrino Laboratory (KSNL) is presented. Charactering and understanding the anomalous surface behaviour is of particular significance to this study. The slow rise-time of surface events is identified via software pulse shape analysis techniques. In addition, the signal-retaining and background-rejecting efficiencies are implied to clarify the actual bulk and surface events in the mixed regime at sub-keV range. Both efficiencies are evaluated with calibration sources and a novel n-type point-contact germanium detector. Efficiencies-corrected background spectra from the low-background facility at KSNL are derived. Part of the parameter space in cross-section versus WIMP-mass is probed and excluded.

Highly tensile-strained Ge/InAlAs nanocomposites

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Faucher, Joseph; Mukherjee, Samik; Akey, Austin; Ironside, Daniel J.; Cabral, Matthew; Sang, Xiahan; Lebeau, James; Bank, Seth R.; Buonassisi, Tonio; Moutanabbir, Oussama; Lee, Minjoo Larry

2017-01-01

Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material.

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

DOE PAGES

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; ...

2017-08-28

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

Fabrication of MTN-type zeolite by self-assembling of supramolecular compound

NASA Astrophysics Data System (ADS)

Huang, Aisheng; Caro, Jürgen

2009-10-01

MTN-type (Zeolite Socony Mobil Thirty-Nine) zeolite was prepared at 473 K by a novel method through self-assembling of a supramolecular compound called 2,4,6-tris (4-pyridyl) triazine (TPT) in DMF (N,N-dimethylformamide). The effects of fluoride, DMF and germanium on the synthesis of MTN-type zeolite were investigated. The crystallization was facilitated by adding fluoride to the synthesis solution, resulting in the formation of highly crystalline MTN samples, while some amorphous phase was observed in fluoride-free batches. DMF was required to obtain a highly crystalline MTN sample, since TPT dissolves easier in DMF than in water, thus facilitating the self-assembling of TPT into a 3D network to structure the MTN framework. The MTN structure could be synthesized at low germanium content (Ge/Si≤0.18), while AST (AlPO 4-sixteen) as a foreign phase is formed at high germanium substitution (Ge/Si≥0.5).

Method of improving the performance of lenses for use in thermal infrared

NASA Astrophysics Data System (ADS)

McDowell, M. W.; Klee, H. W.

1980-10-01

A method is described whereby the field performance of an all-germanium triplet, as used for imaging radiation in the 8 to 13 micron waveband, can be improved. The principle of the method, which could also be used to improve the performance of achromatic triplets or aspherized doublets, involves the use of a field flattener lens which replaces the germanium window of the detector. The curvature of this lens can be optimized to minimize field curvature, which together with chromatic aberration is one of the most serious residuals of thermal imaging systems with relative apertures of around f/0.7. It is also shown that for such relative apertures, and for typical fields of less than 15 degrees, at 100 mm focal length, the location of the aperture stop is not a significant design parameter. This arises as a result of the intrinsic optical properties of germanium.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

NASA Astrophysics Data System (ADS)

Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

2017-02-01

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

NASA Astrophysics Data System (ADS)

Aydın, Güral; Usta, Metin; Oktay, Adem

2018-06-01

Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

Highly tensile-strained Ge/InAlAs nanocomposites

PubMed Central

Jung, Daehwan; Faucher, Joseph; Mukherjee, Samik; Akey, Austin; Ironside, Daniel J.; Cabral, Matthew; Sang, Xiahan; Lebeau, James; Bank, Seth R.; Buonassisi, Tonio; Moutanabbir, Oussama; Lee, Minjoo Larry

2017-01-01

Self-assembled nanocomposites have been extensively investigated due to the novel properties that can emerge when multiple material phases are combined. Growth of epitaxial nanocomposites using lattice-mismatched constituents also enables strain-engineering, which can be used to further enhance material properties. Here, we report self-assembled growth of highly tensile-strained Ge/In0.52Al0.48As (InAlAs) nanocomposites by using spontaneous phase separation. Transmission electron microscopy shows a high density of single-crystalline germanium nanostructures coherently embedded in InAlAs without extended defects, and Raman spectroscopy reveals a 3.8% biaxial tensile strain in the germanium nanostructures. We also show that the strain in the germanium nanostructures can be tuned to 5.3% by altering the lattice constant of the matrix material, illustrating the versatility of epitaxial nanocomposites for strain engineering. Photoluminescence and electroluminescence results are then discussed to illustrate the potential for realizing devices based on this nanocomposite material. PMID:28128282

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

PubMed

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.

2016-12-01

Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of themore » newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.« less

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

Determination of germanium by AAS in chloride-containing matrices.

PubMed

Anwari, M A; Abbasi, H U; Volkan, M; Ataman, O Y

1996-06-01

Interference effects of NaCl on the ET-AAS determination of Ge have been studied. The use of several matrix modifiers to alleviate this problem such as Ni and Zn perchlorates and nitrates, nitric acid, ammonium nitrate are reported. The stabilizing effect of Zn and Ni perchlorates allows the use of high pretreatment temperatures. NaCl is thus thermally volatilized from the atomizer by employing pretreatment temperatures higher than 1500 degrees C resulting in an improved sensitivity. Germanium levels in zinc plant slag samples, have been determined and compared to those obtained for the same samples spiked with NaCl with platform and wall atomization using nickel perchlorate as a matrix modifier. The results were compared with those from a hydride generation system equipped with a liquid nitrogen trap. The recoveries for germanium have been almost complete and amount to 99% for the original slag samples and 80% for 15% (w/w) NaCl containing spiked samples.

Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

NASA Astrophysics Data System (ADS)

Purkait, Tapas Kumar

Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry. Copper(I) catalyzed "click" chemistry also can be explored with azido-terminated Ge NPs which were synthesized by azidation of chloro-terminated Ge NPs. Water soluble PEGylated Ge NPs were synthesized by "click" reaction for biological application. PEGylated Ge NP clusters were prepared using alpha, o-bis alkyno or bis-azido polyethylene glycol (PEG) derivatives by copper catalyzed "click" reaction via inter-particle linking. These nanoparticles were further functionalized by azido beta-cyclodextrin (beta-CD) and azido adamantane via alkyne-azide "click" reactions. Nanoparticle clusters were made from the functionalized Ge NPs by "host-guest" chemistry of beta-CD functionalized Ge NPs either with adamantane functionalized Ge NPs or fullerene, C60.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

NASA Astrophysics Data System (ADS)

Sigillito, Anthony James

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a single-phonon T1 process. At lower frequencies or lower temperatures the qubit coherence times should substantially increase. Finally, we measure the electric field tunability of donors in germanium and find a four order-of-magnitude enhancement in the spin-orbit Stark shift and confirm that the donors should be tunable by at least 4 times the electron spin ensemble linewidth (in isotopically enriched material). Germanium should therefore also be more sensitive to electrically driven nuclear magnetic resonance. Based on these results germanium is a promising alternative to silicon for spin qubits.

High-capacity nanostructured germanium-containing materials and lithium alloys thereof

DOEpatents

Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

2010-08-24

Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0

Interfacial Properties of Germanium Nitride Dielectric Layers in Germanium.

DTIC Science & Technology

1986-01-01

operating information are discussed, INTRODUCTION sible way to construct a circuit for adjusting the power out- A type of apparatus being used with...described as an empirical art at best and by the unot considered a good way to modulate the power output usually greater cost of the microwave power...continuously adjusted. A com- input to the cathode dc supply, and miscellaneous hardware. mon method for the modulation of microwave power to a Figure 1

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

PubMed

Vivien, Laurent; Polzer, Andreas; Marris-Morini, Delphine; Osmond, Johann; Hartmann, Jean Michel; Crozat, Paul; Cassan, Eric; Kopp, Christophe; Zimmermann, Horst; Fédéli, Jean Marc

2012-01-16

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

Dielectric behavior of semiconductors at microwave frequencies

NASA Technical Reports Server (NTRS)

Dahiya, Jai N.

1992-01-01

A cylindrical microwave resonant cavity in TE(011) (Transverse Electric) mode is used to study the dielectric relaxation in germanium and silicon. The samples of these semiconductors are used to perturb the electric field in the cavity, and Slater's perturbation equations are used to calculate the real and imaginary parts of the dielectric constant. The dielectric loss of germanium and silicon is studied at different temperatures, and Debye's equations are used to calculate the relaxation time at these temperatures.

Method to produce catalytically active nanocomposite coatings

DOEpatents

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa; Kazmanli, Kursat

2016-02-09

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

DTIC Science & Technology

2010-06-02

ceramics with silicide additives may be explained in the following ways: 1) metal oxide, for example Ta2O5, formed at oxidation of TaSi2, in the...practically monophase ones, possibly, the additives of corresponding metals in silicide powders were present in insignificant amounts. For...boride with zirconium silicide we prepared the mixtures with 20 vol. % of silicide , the latter being hot pressed in the temperature range of 1600

Computer Modeling of Ceramic Boride Composites

DTIC Science & Technology

2014-11-01

the reinforcer deform elastically, for the theoretical strength of the composite it can be written [46] BBBAAABBAAK EE δεδεσδσδσ +=+= (51) where...coefficients of thermal expansion. Approximately linear expansion coefficient of the composite is determined by the relation [52] EEE BBBAAAk...1 δαδαα ⋅+⋅= , (58) where AE and BE are Young moduli of components, and E – average modulus for composition BBAA EEE δδ

Ground State Structures of Boron-Rich Rhodium Boride: An Ab Initio Study

NASA Astrophysics Data System (ADS)

Chu, Bin-Hua; Zhao, Yuan; Yan, Jin-Liang; Li, Da

2018-01-01

Not Available Supported by the Natural Science Foundation of Shandong Province under Grant Nos ZR2016AP02, ZR2016FM38 and ZR2016EMP01, the Innovation Project of Ludong University under Grant No LB2016013, the Open Project of State Key Laboratory of Superhard Materials of Jilin University under Grant No 201605, and the National Natural Science Foundation of China under Grant Nos 11704170 and 61705097.

Investigation of the thermophysical properties of high-melting materials with the aid of a complex of instruments

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Gordiyenko, S. P.; Guseva, Y. A.; Turchanin, A. G.; Fenochka, B. V.; Fesenko, V. V.

1984-01-01

The evaporation rate, vapor pressure, heats of evaporation reaction (sublimation, dissociation), enthalpy, electrical resistance, heat capacity, emissivity, and heat conductivity of various carbides, borides, sulfides, nitrides, selenides, and phosphides were investigated. A set of high temperature high vacuum devices, calorimeters (designed for operation at 400 to 1300 K and from 1200 K), and mass spectrometers, most of which were specially developed for these studies, is described.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

NASA Technical Reports Server (NTRS)

Bratt, P. R.; Lewis, N. N.; Long, L. E.

1978-01-01

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

A first-principles core-level XPS study on the boron impurities in germanium crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

2013-12-04

We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

DTIC Science & Technology

2010-05-01

samples were dipped in an aqueous solution of iodine (I) and potassium iodide (KI) (25 gm I and 100 gm KI per liter of water [H2O] ) (16). The samples...Satterfield, C. N.; Wentworth, R. L. in Hydrogen Peroxide , Reinhold Publishing, New York, 1955, p. 370. 12 19. Kishioka, K.; Horita, S.; Ohdaria, K...germanium H2O water HBT heterojunction bipolar transistor I iodine IPA isopropal alcohol KI potassium iodide MEE metal enhanced etching

Gallium-doped germanium, evaluation of photoconductors, part 1

NASA Technical Reports Server (NTRS)

Moore, W. J.

1979-01-01

Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

PubMed

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

NASA Technical Reports Server (NTRS)

Haller, E. E.; Itoh, K. M.; Beeman, J. W.

1996-01-01

Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

NASA Astrophysics Data System (ADS)

Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

2016-07-01

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

PubMed

Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

2016-07-22

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Current experiments in germanium 0 ν β β search -- GERDA and MAJORANA

NASA Astrophysics Data System (ADS)

von Sturm, K.

2015-01-01

There are unanswered questions regarding neutrino physics that are of great interest for the scientific community. For example the absolute masses, the mass hierarchy and the nature of neutrinos are unknown up to now. The discovery of neutrinoless double beta decay (0νββ) would prove the existence of a Majorana mass, which would be linked to the half-life of the decay, and would in addition provide an elegant solution for the small mass of the neutrinos via the seesaw mechanism. Because of an existing discovery claim of 0νββ of 76Ge and the excellent energy resolution achievable, germanium is of special interest in the search for 0νββ . In this article the state of the art of germanium 0νββ search, namely the GERDA experiment and MAJORANA demonstrator, is presented. In particular, recent results of the GERDA collaboration, which strongly disfavour the above mentioned claim, are discussed.

The performance of the Muon Veto of the G erda experiment

NASA Astrophysics Data System (ADS)

Freund, K.; Falkenstein, R.; Grabmayr, P.; Hegai, A.; Jochum, J.; Knapp, M.; Lubsandorzhiev, B.; Ritter, F.; Schmitt, C.; Schütz, A.-K.; Jitnikov, I.; Shevchik, E.; Shirchenko, M.; Zinatulina, D.

2016-05-01

Low background experiments need a suppression of cosmogenically induced events. The Gerda experiment located at Lngs is searching for the 0ν β β decay of ^{76}Ge. It is equipped with an active muon veto the main part of which is a water Cherenkov veto with 66 PMTs in the water tank surrounding the Gerda cryostat. With this system 806 live days have been recorded, 491 days were combined muon-germanium data. A muon detection efficiency of \\varepsilon _\\upmu d=(99.935± 0.015) % was found in a Monte Carlo simulation for the muons depositing energy in the germanium detectors. By examining coincident muon-germanium events a rejection efficiency of \\varepsilon _{\\upmu r}=(99.2_{-0.4}^{+0.3}) % was found. Without veto condition the muons by themselves would cause a background index of {BI}_{μ }=(3.16 ± 0.85)× 10^{-3} cts/(keV\\cdot kg\\cdot year) at Q_{β β }.

Monte Carlo studies and optimization for the calibration system of the GERDA experiment

NASA Astrophysics Data System (ADS)

Baudis, L.; Ferella, A. D.; Froborg, F.; Tarka, M.

2013-11-01

The GERmanium Detector Array, GERDA, searches for neutrinoless double β decay in 76Ge using bare high-purity germanium detectors submerged in liquid argon. For the calibration of these detectors γ emitting sources have to be lowered from their parking position on the top of the cryostat over more than 5 m down to the germanium crystals. With the help of Monte Carlo simulations, the relevant parameters of the calibration system were determined. It was found that three 228Th sources with an activity of 20 kBq each at two different vertical positions will be necessary to reach sufficient statistics in all detectors in less than 4 h of calibration time. These sources will contribute to the background of the experiment with a total of (1.07±0.04(stat)-0.19+0.13(sys))×10-4 cts/(keV kg yr)) when shielded from below with 6 cm of tantalum in the parking position.

Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

PubMed

Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

2013-07-31

Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE PAGES

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.; ...

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Passivation of micro-strip gas chambers with an interstitial germanium coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyamoto, J.; Knoll, G.F.; Amos, N.

1996-12-31

Micro-strip gas chambers (MSGCs) were constructed in the Solid-State Electronics Laboratory of the University of Michigan and their performance was studied. Many efforts have been made in the past to construct MSGCs that yield high absolute gas gain and stable gas gain. Introducing a thin germanium layer has been effective for passivation but difficulties associated with the poor adhesiveness of the thin layer have been a serious obstacle. This paper reports on a new method used to overcome these difficulties. Unlike the conventional coating method the thin germanium layer was successfully deposited between the strip lines. This technique requires amore » careful geometric alignment of a second photomask with the original micro-strip structure. The resulting detector performance was noteworthy and an absolute gas gain of 2 {center_dot} 10{sup 4} was easily achieved by the new chamber. The chamber`s gain instability was also reduced significantly compared with those without interstitial coating.« less

Resonant light emission from uniaxially tensile-strained Ge microbridges

NASA Astrophysics Data System (ADS)

Zhou, Peiji; Xu, Xuejun; Matsushita, Sho; Sawano, Kentarou; Maruizumi, Takuya

2018-04-01

A highly strained germanium microbridge is a promising platform for realizing monolithically integrated lasers on a silicon substrate. However, it remains challenging to combine it with optical resonators. Here, we have observed resonant light emission peaks with Q-factors of about 180 in room-temperature photoluminescence spectra from uniaxially tensile-strained germanium microbridges. These peaks are found to correspond to the resonance in Fabry–Perot (FP) cavities formed transversely to the uniaxial stress axis. On the basis of this phenomenon, we design a Fabry–Perot cavity by adding distributed Bragg reflectors (DBRs) laterally to the microbridge. With this design, the optical performance can be optimized without disturbing to the mechanical structure. A Q-factor as high as 1400 is obtained from numerical simulation. Moreover, we prove by theoretical analysis deduction and calculation that the lateral structure will not decrease the strain, unlike the on-pad DBR structure. The structure thus provides a promising solution for the realization of highly strained germanium lasers in the future.

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Witt, A. F.; Lichtensteiger, M.; Herman, C. J.

1982-01-01

The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

1976-09-01

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

Multi-keV x-ray sources from metal-lined cylindrical hohlraums

NASA Astrophysics Data System (ADS)

Jacquet, L.; Girard, F.; Primout, M.; Villette, B.; Stemmler, Ph.

2012-08-01

As multi-keV x-ray sources, plastic hohlraums with inner walls coated with titanium, copper, and germanium have been fired on Omega in September 2009. For all the targets, the measured and calculated multi-keV x-ray power time histories are in a good qualitative agreement. In the same irradiation conditions, measured multi-keV x-ray conversion rates are ˜6%-8% for titanium, ˜2% for copper, and ˜0.5% for germanium. For titanium and copper hohlraums, the measured conversion rates are about two times higher than those given by hydroradiative computations. Conversely, for the germanium hohlraum, a rather good agreement is found between measured and computed conversion rates. To explain these findings, multi-keV integrated emissivities calculated with RADIOM [M. Busquet, Phys. Fluids 85, 4191 (1993)], the nonlocal-thermal-equilibrium atomic physics model used in our computations, have been compared to emissivities obtained from different other models. These comparisons provide an attractive way to explain the discrepancies between experimental and calculated quantitative results.

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R., Jr. (Inventor); Stoakley, Diane M. (Inventor)

2009-01-01

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277

Formation of Porous Germanium Layers by Silver-Ion Implantation

NASA Astrophysics Data System (ADS)

Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

2018-04-01

We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Wilcoxon signed-rank-based technique for the pulse-shape analysis of HPGe detectors

NASA Astrophysics Data System (ADS)

Martín, S.; Quintana, B.; Barrientos, D.

2016-07-01

The characterization of the electric response of segmented-contact high-purity germanium detectors requires scanning systems capable of accurately associating each pulse with the position of the interaction that generated it. This process requires an algorithm sensitive to changes above the electronic noise in the pulse shapes produced at different positions, depending on the resolution of the Ge crystal. In this work, a pulse-shape comparison technique based on the Wilcoxon signed-rank test has been developed. It provides a method to distinguish pulses coming from different interaction points in the germanium crystal. Therefore, this technique is a necessary step for building a reliable pulse-shape database that can be used later for the determination of the position of interaction for γ-ray tracking spectrometry devices such as AGATA, GRETA or GERDA. The method was validated by comparison with a χ2 test using simulated and experimental pulses corresponding to a Broad Energy germanium detector (BEGe).

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium.

PubMed

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J; Kraus, Peter M; Cushing, Scott K; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20  cm -3 . Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.; Kraus, Peter M.; Cushing, Scott K.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. PMID:28569752

Measurement of the low-energy quenching factor in germanium using an Y 88 / Be photoneutron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scholz, B. J.; Chavarria, A. E.; Collar, J. I.

2016-12-01

We employ an 88Y/Be photoneutron source to derive the quenching factor for neutron-induced nuclear recoils in germanium, probing recoil energies from a few hundred eVnr to 8.5 keV nr. A comprehensive Monte Carlo simulation of our setup is compared to experimental data employing a Lindhard model with a free electronic energy loss k and an adiabatic correction for sub-keVnr nuclear recoils. The best fit k=0.179±0.001 obtained using a Monte Carlo Markov chain (MCMC) ensemble sampler is in good agreement with previous measurements, confirming the adequacy of the Lindhard model to describe the stopping of few-keV ions in germanium crystals at a temperaturemore » of ~77 K. This value of k corresponds to a quenching factor of 13.7% to 25.3% for nuclear recoil energies between 0.3 and 8.5 keV nr, respectively.« less

Intrinsic germanium detector used in borehole sonde for uranium exploration

USGS Publications Warehouse

Senftle, F.E.; Moxham, R.M.; Tanner, A.B.; Boynton, G.R.; Philbin, P.W.; Baicker, J.A.

1976-01-01

A borehole sonde (~1.7 m long; 7.3 cm diameter) using a 200 mm2 planar intrinsic germanium detector, mounted in a cryostat cooled by removable canisters of frozen propane, has been constructed and tested. The sonde is especially useful in measuring X- and low-energy gamma-ray spectra (40–400 keV). Laboratory tests in an artificial borehole facility indicate its potential for in-situ uranium analyses in boreholes irrespective of the state of equilibrium in the uranium series. Both natural gamma-ray and neutron-activation gamma-ray spectra have been measured with the sonde. Although the neutron-activation technique yields greater sensitivity, improvements being made in the resolution and efficiency of intrinsic germanium detectors suggest that it will soon be possible to use a similar sonde in the passive mode for measurement of uranium in a borehole down to about 0.1% with acceptable accuracy. Using a similar detector and neutron activation, the sonde can be used to measure uranium down to 0.01%.

Feasibility study of the welding of SiC

NASA Technical Reports Server (NTRS)

Moore, T. J.

1985-01-01

In a brief study of the feasibility of welding sintered alpha-SiC, solid-state welding and brazing were investigated. Joint quality was determined solely by microstructural examination. Hot-pressure welding was shown to be feasible at 1950 C. Diffusion welding and brazing were also successful under hot isostatic pressure at 1950 C when boride, carbide, and silicide interlayers were used. Furnace brazing was accomplished at 1750 C when a TiSi2 interlayer was introduced.

Titanium Diboride Electrodeposited Coatings

DTIC Science & Technology

1977-06-01

4 Ti02. This material was deposited in the form of a porous mass or loose particles which must be leached in water and acid to remove adherent...poudres metallique par electrolyse ignee. Revue de Metallurgie, v. 45, 1948, p. 49-59. 7. POWELL, C. F. Borides in High Temperature Materials and... water solution of thallium formate-thallium malonate 50-50 mole percent mixture with a density ranging from about 5 g/cm^ at the bottom to about 2 g/cm

METHOD OF PROTECTING TANTALUM CRUCIBLES AGAINST REACTION WITH MOLTEN URANIUM

DOEpatents

Feder, H.M.; Chellew, N.R.

1960-08-16

Tantalum crucibles against reaction with molten uranium by contacting the surfaces to be protected with metallic boron (as powder, vapor, or suspension in a liquid-volatilenonreacting medium, such as acetone and petroleum oil) at about 1800 deg C in vacuum, discontinuing contact with the boron, and heating the crucibles to a temperature of between 1800 aad 2000 deg C, whereby the tantalum boride formed in the first heating step is converted to tantalum monoboride.

Alumina-based ceramic composite

DOEpatents

Alexander, Kathleen B.; Tiegs, Terry N.; Becher, Paul F.; Waters, Shirley B.

1996-01-01

An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite.

Preliminary investigation of zirconium boride ceramals for gas-turbine blade applications

NASA Technical Reports Server (NTRS)

Hoffman, Charles A

1953-01-01

Zirconium boride ZrB2 ceramals were investigated for possible gas-turbine-blade application. Included in the study were thermal shock evaluations of disks, preliminary turbine-blade operation, and observations of oxidation resistance. Thermal shock disks of the following three compositions were studied: (a) 97.5 percent ZrB2 plus 2.5 percent B by weight; (b) 92.5 percent ZrB2 plus 7.5 percent B by weight; and (c) 100 percent ZrB2. Thermal shock disks were quenched from temperatures of 1800 degrees, 2000 degrees, 2200 degrees, and 2400 degrees F. The life of turbine blades containing 93 percent ZrB2 plus 7 percent B by weight was determined in gas-turbine tests. The blades were run at approximately 1600 degrees F and 15,000 to 26,000 rpm. The thermal shock resistance of the 97.5 percent ZrB2 plus 2.5 percent boron ceramals compares favorably with that of TiC plus Co and TiC plus Ni ceramals. Oxidation of the disks during the thermal shock evaluation was slight for the comparatively short time (8.3 hr) up through 2000 degrees F. Oxidation of a specimen was severe, however, after 100 hours at 2000 degrees F. The turbine blade performance evaluation of the 93 percent ZrB2 plus 7 percent B composition was preliminary in scope ; no conclusions can be drawn.

Probing the superconducting ground state of the rare-earth ternary boride superconductors R RuB2 (R = Lu,Y) using muon-spin rotation and relaxation

NASA Astrophysics Data System (ADS)

Barker, J. A. T.; Singh, R. P.; Hillier, A. D.; Paul, D. McK.

2018-03-01

The superconductivity in the rare-earth transition-metal ternary borides R RuB2 (where R =Lu and Y) has been investigated using muon-spin rotation and relaxation. Measurements made in zero field suggest that time-reversal symmetry is preserved upon entering the superconducting state in both materials; a small difference in depolarization is observed above and below the superconducting transition in both compounds, however, this has been attributed to quasistatic magnetic fluctuations. Transverse-field measurements of the flux-line lattice indicate that the superconductivity in both materials is fully gapped, with a conventional s -wave pairing symmetry and BCS-like magnitudes for the zero-temperature gap energies. The electronic properties of the charge carriers in the superconducting state have been calculated, with effective masses m*/me=9.8 ±0.1 and 15.0 ±0.1 in the Lu and Y compounds, respectively, with superconducting carrier densities ns=(2.73 ±0.04 ) ×1028m-3 and (2.17 ±0.02 ) ×1028m-3 . The materials have been classified according to the Uemura scheme for superconductivity, with values for Tc/TF of 1 /(414 ±6 ) and 1 /(304 ±3 ) , implying that the superconductivity may not be entirely conventional in nature.

Germanium multiphase equation of state

DOE PAGES

Crockett, Scott D.; Lorenzi-Venneri, Giulia De; Kress, Joel D.; ...

2014-05-07

A new SESAME multiphase germanium equation of state (EOS) has been developed using the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element

Innovative remotely-controlled bending device for thin silicon and germanium crystals

NASA Astrophysics Data System (ADS)

De Salvador, D.; Carturan, S.; Mazzolari, A.; Bagli, E.; Bandiera, L.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Romagnoni, M.; Sytov, A.

2018-04-01

Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).

The Constellation-X Focal Plane Microcalorimeter Array: An NTD-Germanium Solution

NASA Technical Reports Server (NTRS)

Beeman, J.; Silver, E.; Bandler, S.; Schnopper, H.; Murray, S.; Madden, N.; Landis, D.; Haller, E. E.; Barbera, M.

2001-01-01

The hallmarks of Neutron Transmutation Doped (NTD) germanium cryogenic thermistors include high reliability, reproducibility, and long term stability of bulk carrier transport properties. Using micro-machined NTD Ge thermistors with integral 'flying' leads, we can now fabricate two-dimensional arrays that are built up from a series of stacked linear arrays. We believe that this modular approach of building, assembling, and perhaps replacing individual modules of detectors is essential to the successful fabrication and testing of large multi-element instruments. Details of construction are presented.

Broadband telecom to mid-infrared supercontinuum generation in a dispersion-engineered silicon germanium waveguide.

PubMed

Ettabib, Mohamed A; Xu, Lin; Bogris, Adonis; Kapsalis, Alexandros; Belal, Mohammad; Lorent, Emerick; Labeye, Pierre; Nicoletti, Sergio; Hammani, Kamal; Syvridis, Dimitris; Shepherd, David P; Price, Jonathan H V; Richardson, David J; Petropoulos, Periklis

2015-09-01

We demonstrate broadband supercontinuum generation (SCG) in a dispersion-engineered silicon-germanium waveguide. The 3 cm long waveguide is pumped by femtosecond pulses at 2.4 μm, and the generated supercontinuum extends from 1.45 to 2.79 μm (at the -30  dB point). The broadening is mainly driven by the generation of a dispersive wave in the 1.5-1.8 μm region and soliton fission. The SCG was modeled numerically, and excellent agreement with the experimental results was obtained.

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Multiline phase conjugation at 4 microm in germanium.

PubMed

Depatie, D; Haueisen, D

1980-06-01

Phase conjugation by degenerate four-wave mixing in the 4-microm region in germanium has been observed for both single-line and multiline radiation. By using single-line output of a DF laser at 3.8 microm, X3 has been measured to be 4 X 10(-1) esu. Phase conjugation of multiline laser output has been achieved with an efficiency of 0.03%, a level that is consistent with the susceptibility found for single-line phase conjugation and the assumption of independent conjugation of each line of the multiline output.

A Compton scattering setup for pulse shape discrimination studies in germanium detectors.

PubMed

von Sturm, K; Belogurov, S; Brugnera, R; Garfagnini, A; Lippi, I; Modenese, L; Rosso, D; Turcato, M

2017-07-01

Pulse shape discrimination is an important handle to improve sensitivity in low background experiments. A dedicated setup was built to investigate the response of high-purity germanium detectors to single Compton scattered events. Using properly collimated γ-ray sources, it is possible to select events with known interaction location. The aim is to correlate the position dependent signal shape with geometrical and electrical properties of the detector. We report on design and performance of the setup with a first look on data. Copyright © 2017 Elsevier Ltd. All rights reserved.

Analysis of the X-ray emission spectra of copper, germanium and rubidium plasmas produced at the Phelix laser facility

NASA Astrophysics Data System (ADS)

Comet, M.; Pain, J.-C.; Gilleron, F.; Piron, R.; Denis-Petit, D.; Méot, V.; Gosselin, G.; Morel, P.; Hannachi, F.; Gobet, F.; Tarisien, M.; Versteegen, M.

2017-03-01

We present the analysis of X-ray emission spectra of copper, germanium and rubidium plasmas measured at the Phelix laser facility. The laser intensity was around 6×1014 W.cm-2. The analysis is based on the hypothesis of an homogeneous plasma in local thermodynamic equilibrium using an effective temperature. This temperature is deduced from hydrodynamic simulations and collisional-radiative computations. Spectra are then calculated using the LTE opacity codes OPAMCDF and SCO-RCG and compared to experimental data.

Method of making a light weight battery plaque

NASA Technical Reports Server (NTRS)

Reid, M. A.; Post, R. E.; Soltis, D. G. (Inventor)

1984-01-01

A nickel plaque which may be coated with a suitable metal or compound to make an electrode for a fuel cell or battery is fabricated by directing nickel sensitizer, catalyst and plating solutions through a porous plastic substrate in the order named and at prescribed temperatures and flow rates. A boride compound dissolved in the plating solution decreases the electrical resistance of the plaque. Certain substrates may require treatment in an alkali solution to dissolve filler materials thereby increasing porosity to a required 65%.

Development of a method for fabricating metallic matrix composite shapes by a continuous mechanical process

NASA Technical Reports Server (NTRS)

Divecha, A. P.

1974-01-01

Attempts made to develop processes capable of producing metal composites in structural shapes and sizes suitable for space applications are described. The processes must be continuous and promise to lower fabrication costs. Special attention was given to the aluminum boride (Al/b) composite system. Results show that despite adequate temperature control, the consolidation characteristics did not improve as expected. Inadequate binder removal was identified as the cause responsible. An Al/c (aluminum-graphite) composite was also examined.

Identification of thermodynamically stable ceramic reinforcement materials for iron aluminide matrices

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1990-01-01

Aluminide-base intermetallic matrix composites are currently being considered as potential high-temperature materials. One of the key factors in the selection of a reinforcement material is its chemical stability in the matrix. In this study, chemical interactions between iron aluminides and several potential reinforcement materials, which include carbides, oxides, borides, and nitrides, are analyzed from thermodynamic considerations. Several chemically compatible reinforcement materials are identified for the iron aluminides with Al concentrations ranging from 40 to 50 at. pct.

The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

DTIC Science & Technology

1990-01-01

and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

Alumina-based ceramic composite

DOEpatents

Alexander, K.B.; Tiegs, T.N.; Becher, P.F.; Waters, S.B.

1996-07-23

An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite. 5 figs.

Anti-scratch AlMgB14 Gorilla® Glass coating

NASA Astrophysics Data System (ADS)

Putrolaynen, V. V.; Grishin, A. M.; Rigoev, I. V.

2017-10-01

Hard aluminum-magnesium boride (BAM) films were fabricated onto Corning® Gorilla® Glass by radio-frequency magnetron sputtering of a single stoichiometric AlMgB14 target. BAM films exhibit a Vickers hardness from 10 to 30 GPa and a Young's modulus from 80 to 160 GPa depending on applied loading forces. Deposited hard coating increases the critical load at which glass substrate cracks. The adhesion energy of BAM films on Gorilla® Glass is 6.4 J/m2.

Synthesis and properties of nickel cobalt boron nanoparticles

NASA Astrophysics Data System (ADS)

Patel, J.; Pankhurst, Q. A.; Parkin, I. P.

2005-01-01

Amorphous cobalt nickel boride nanoparticles were synthesised by chemical reduction synthesis in aqueous solution. Careful control of synthesis conditions and post reaction oxidation enabled the nanoparticles to be converted into a core-shell structure comprising of an amorphous Co-Ni-B core and an outer metal oxide sheet. These particles had interesting magnetic properties including saturation magnetisations and coercivities of the order of 80 emu/g and 170 Oe respectively, making them suitable for a potential use as an exchange-pinned magnetic material.

SU-C-201-02: Quantitative Small-Animal SPECT Without Scatter Correction Using High-Purity Germanium Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gearhart, A; Peterson, T; Johnson, L

2015-06-15

Purpose: To evaluate the impact of the exceptional energy resolution of germanium detectors for preclinical SPECT in comparison to conventional detectors. Methods: A cylindrical water phantom was created in GATE with a spherical Tc-99m source in the center. Sixty-four projections over 360 degrees using a pinhole collimator were simulated. The same phantom was simulated using air instead of water to establish the true reconstructed voxel intensity without attenuation. Attenuation correction based on the Chang method was performed on MLEM reconstructed images from the water phantom to determine a quantitative measure of the effectiveness of the attenuation correction. Similarly, a NEMAmore » phantom was simulated, and the effectiveness of the attenuation correction was evaluated. Both simulations were carried out using both NaI detectors with an energy resolution of 10% FWHM and Ge detectors with an energy resolution of 1%. Results: Analysis shows that attenuation correction without scatter correction using germanium detectors can reconstruct a small spherical source to within 3.5%. Scatter analysis showed that for standard sized objects in a preclinical scanner, a NaI detector has a scatter-to-primary ratio between 7% and 12.5% compared to between 0.8% and 1.5% for a Ge detector. Preliminary results from line profiles through the NEMA phantom suggest that applying attenuation correction without scatter correction provides acceptable results for the Ge detectors but overestimates the phantom activity using NaI detectors. Due to the decreased scatter, we believe that the spillover ratio for the air and water cylinders in the NEMA phantom will be lower using germanium detectors compared to NaI detectors. Conclusion: This work indicates that the superior energy resolution of germanium detectors allows for less scattered photons to be included within the energy window compared to traditional SPECT detectors. This may allow for quantitative SPECT without implementing scatter correction, reducing uncertainties introduced by scatter correction algorithms. Funding provided by NIH/NIBIB grant R01EB013677; Todd Peterson, Ph.D., has had a research contract with PHDs Co., Knoxville, TN.« less

Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

NASA Astrophysics Data System (ADS)

Ghosh, Arindam

Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry breaking remains unknown, we believe this indicates a new many-body electronic phase in two-dimensionally doped silicon and germanium with a half-filled impurity band. We acknowledge financial support from Department of Science and Technology, Government of India, and Australia-India Strategic Research Fund (AISRF).

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

2002-01-01

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Temperature-dependent Refractive Index of Silicon and Germanium

NASA Technical Reports Server (NTRS)

Frey, Bradley J.; Leviton, Douglas B.; Madison, Timothy J.

2006-01-01

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than k5 x 10" is desired.

The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

NASA Astrophysics Data System (ADS)

Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

2018-01-01

The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Experience from operating germanium detectors in GERDA

NASA Astrophysics Data System (ADS)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

Search for neutrinoless double beta decay with GERDA phase II

NASA Astrophysics Data System (ADS)

Agostini, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; Di Marco, N.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Gangapshev, A.; Garfagnini, A.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakenmüller, J.; Hegai, A.; Heisel, M.; Hemmer, S.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Csáthy, J. Janicskó; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Kish, A.; Klimenko, A.; Kneißl, R.; Knies, J.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Majorovits, B.; Maneschg, W.; Marissens, G.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Ransom, C.; Reissfelder, M.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Schmitt, C.; Schneider, B.; Schönert, S.; Schreiner, J.; Schulz, O.; Schütz, A.-K.; Schwingenheuer, B.; Seitz, H.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Wegmann, A.; Wester, T.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2017-10-01

The GERmanium Detector Array (gerda) experiment, located at the Gran Sasso underground laboratory in Italy, is one of the leading experiments for the search of 0νββ decay. In Phase II of the experiment 35.6 kg of enriched germanium detectors are operated. The application of active background rejection methods, such as a liquid argon scintillation light read-out and pulse shape discrimination of germanium detector signals, allowed to reduce the background index to the intended level of 10-3 cts/(keV.kg.yr). In the first five month of data taking 10.8 kg yr of exposure were accumulated. No signal has been found and together with data from Phase I a new limit for the neutrinoless double beta decay half-life of 76Ge of 5.3 . 1025 yr at 90% C.L. was established in June 2016. Phase II data taking is ongoing and will allow the exploration of half-lifes in the 1026 yr regime. The current status of data taking and an update on the background index are presented.